TW202207483A - Fluorescent plate, wavelength conversion member, and light source device - Google Patents
Fluorescent plate, wavelength conversion member, and light source device Download PDFInfo
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- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
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- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
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- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
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- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/06—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
- F21V3/08—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material comprising photoluminescent substances
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V7/00—Reflectors for light sources
- F21V7/04—Optical design
- F21V7/05—Optical design plane
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- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
- F21V7/26—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material the material comprising photoluminescent substances
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
Description
本發明係關於一種螢光板、波長轉換構件及光源裝置。The present invention relates to a fluorescent plate, a wavelength conversion member and a light source device.
過往,已知一種一照射光則發出螢光之螢光板。近年來,周知一種具有螢光相等且使之高功能化的螢光板,其中該螢光相一被照射光則發出與所照射之光的波長不同波長的光。例如,專利文獻1揭示有一種於螢光板之內部形成利用螢光相使光反射之空隙的技術。
[先前技術文獻]
[專利文獻]Conventionally, a fluorescent plate that emits fluorescent light when irradiated with light has been known. In recent years, there has been known a highly functional fluorescent plate having a fluorescent phase that emits light of a wavelength different from that of the irradiated light when the fluorescent phase is irradiated with light. For example,
專利文獻1:日本專利第5989268號公報Patent Document 1: Japanese Patent No. 5989268
[發明欲解決之課題][The problem to be solved by the invention]
然而,為了於螢光板中提高光的取出效率,前述先前技術仍存在改善的餘地。例如,專利文獻1記載之螢光板,具備從小於3μm之空隙到大於12μm的空隙為止的內徑分布較寬的複數個空隙。如此,若空隙的內徑存在偏差,則於空隙中散射之光的散射方向的偏差也會變大,因此可能會降低螢光板中之光的取出效率。However, in order to improve the light extraction efficiency in the fluorescent plate, there is still room for improvement in the aforementioned prior art. For example, the phosphor plate described in
本發明之目的在於,提供一種可於螢光板中提高光的取出效率的技術。 [用以解決課題之手段]An object of the present invention is to provide a technique that can improve the extraction efficiency of light in a fluorescent plate. [means to solve the problem]
本發明係為了解決前述課題之至少一部分課題而完成者,其可作為以下之形態實現。The present invention has been accomplished in order to solve at least a part of the above-mentioned problems, and can be realized as the following aspects.
(1)根據本發明之一形態,提供一種螢光板。該螢光板具備:螢光相,其藉由激發光發出螢光;及複數個空隙;且於前述螢光板之包含前述空隙之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙之等效圓直徑的標準偏差為1.5以下。(1) According to an aspect of the present invention, a phosphor plate is provided. The fluorescent plate includes: a fluorescent phase that emits fluorescent light by excitation light; and a plurality of voids; and in the cross section of the fluorescent plate including the voids, an equivalent circle diameter is 0.4 μm or more and 50 μm or less. The standard deviation of the equivalent circle diameter of the void is 1.5 or less.
根據此構成,螢光板具有之空隙為,於螢光板之包含空隙之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙之等效圓直徑的標準偏差為1.5以下。亦即,於螢光板中,等效圓直徑為0.4μm以上且50μm以下的空隙之等效圓直徑的變化相對較小,螢光板具有相似大小的空隙。藉此,由於空隙中之光在螢光相上的反射偏差小,因此與空隙之等效圓直徑上存在較大偏差的情況比較,可提高空隙的反射率。因此,可於螢光板中提高光的取出效率。According to this configuration, the fluorescent plate has voids such that the standard deviation of the equivalent circle diameters of voids having an equivalent circle diameter of 0.4 μm or more and 50 μm or less in a cross section of the fluorescent plate including the voids is 1.5 or less. That is, in the fluorescent plate, the variation of the equivalent circle diameter of the voids having an equivalent circle diameter of 0.4 μm or more and 50 μm or less is relatively small, and the fluorescent plate has voids of similar size. Thereby, since the reflection deviation of the light in the voids on the fluorescent phase is small, the reflectivity of the voids can be improved compared with the case where there is a large deviation in the equivalent circle diameter of the voids. Therefore, the extraction efficiency of light can be improved in the fluorescent plate.
(2)於前述形態之螢光板中,等效圓直徑為0.4μm以上且50μm以下的空隙中之等效圓直徑為1μm以上且小於10μm的空隙之個數的比例,也可為90%以上。根據此構成,於螢光板中,等效圓直徑為0.4μm以上且50μm以下的空隙中之等效圓直徑為1μm以上且小於10μm的空隙,於個數的比例上成為90%以上。藉此,由於空隙中之在螢光相上的光的反射偏差進一步變小,因此可進一步提高空隙的反射率。因此,可於螢光板中進一步提高光的取出效率。(2) In the fluorescent plate of the above-mentioned form, the ratio of the number of voids with an equivalent circle diameter of 1 μm or more and less than 10 μm among the voids with an equivalent circle diameter of 0.4 μm or more and 50 μm or less may be 90% or more. . According to this configuration, in the fluorescent plate, the ratio of the number of voids with an equivalent circle diameter of 1 μm or more and less than 10 μm among the voids with an equivalent circle diameter of 0.4 μm or more and 50 μm or less is 90% or more. Thereby, since the reflection deviation of the light on the fluorescent phase in the voids is further reduced, the reflectance of the voids can be further improved. Therefore, the extraction efficiency of light can be further improved in the fluorescent plate.
(3)於前述形態之螢光板中,於前述螢光板之包含前述空隙之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙所佔之面積的比例,也可為3%以上且15%以下。根據此構成,於螢光板中,等效圓直徑為0.4μm以上且50μm以下的空隙,在螢光板之剖面中之面積的比例為3%以上且15%以下。於螢光板之剖面上的面積比例小之情況下,由於反射次數少因而反射率降低。此外,於螢光板之剖面上的面積比例大之情況下,由於相鄰空隙之間的距離變短,因此會重複反射進而造成光容易衰減。於前述形態之螢光板中,藉由抑制這些弊端的產生,可提高光之朝螢光板的外部的取出效率。(3) In the fluorescent plate of the above-mentioned form, in the cross-section of the cross-section of the fluorescent plate including the voids, the ratio of the area occupied by the voids having an equivalent circular diameter of 0.4 μm or more and 50 μm or less may be 3%. Above and below 15%. According to this configuration, in the fluorescent plate, the ratio of the area of the space having an equivalent circle diameter of 0.4 μm or more and 50 μm or less in the cross section of the fluorescent plate is 3% or more and 15% or less. When the area ratio of the cross section of the phosphor plate is small, the reflectivity is lowered due to the small number of reflections. In addition, when the area ratio of the cross-section of the fluorescent plate is large, since the distance between adjacent voids is shortened, repeated reflections occur and the light is easily attenuated. In the fluorescent plate of the above-mentioned form, by suppressing the occurrence of these drawbacks, the extraction efficiency of light to the outside of the fluorescent plate can be improved.
(4)於前述形態之螢光板中,更具備供前述激發光透射之透光相,於前述螢光板之包含前述空隙之剖面的剖面中,前述螢光相對前述螢光相及前述透光相所佔前述螢光板的總和之面積比也可為95%以下。當製造螢光板時,若藉由燒結形成之空隙增多,則空隙變成扭曲之形狀,因此等效圓直徑的標準偏差容易惡化。根據前述構成,由於螢光相對螢光相及透光相之佔螢光板的總和之面積比為95%以下,因此燒結變容易進行,變得難以形成空隙。藉此,空隙難以形成扭曲的形狀,因此可抑制等效圓直徑的標準偏差的惡化。因此,可抑制朝螢光板之外部的光之取出效率的降低。(4) In the phosphor plate of the above-mentioned form, a light-transmitting phase for transmitting the excitation light is further provided, and in the cross-section of the cross-section of the phosphor plate including the void, the fluorescent phase is opposite to the fluorescent phase and the light-transmitting phase. The area ratio of the total amount of the fluorescent plate may be 95% or less. When a phosphor plate is manufactured, if the number of voids formed by sintering increases, the voids become distorted, and the standard deviation of the equivalent circle diameter tends to deteriorate. According to the above-mentioned configuration, since the area ratio of the phosphor to the total of the phosphor phase and the light-transmitting phase in the phosphor plate is 95% or less, sintering is facilitated, and it becomes difficult to form voids. As a result, it is difficult for the void to form a twisted shape, so that the deterioration of the standard deviation of the equivalent circle diameter can be suppressed. Therefore, a decrease in the extraction efficiency of light toward the outside of the fluorescent plate can be suppressed.
(5)根據本發明之另一形態,提供一種波長轉換構件。該波長轉換構件具備:前述螢光板;及反射構件,其配置於前述螢光板,且反射前述激發光及前述螢光。根據此構成,波長轉換構件具備反射構件,該反射構件係用以反射自螢光板放射之螢光及激發光。藉此,於螢光板上被朝與應照射光之既定方向不同的方向放射的光,藉由反射板朝既定方向反射,因此可增加自波長轉換構件放射的光量。(5) According to another aspect of the present invention, a wavelength conversion member is provided. The wavelength conversion member includes: the fluorescent plate; and a reflection member disposed on the fluorescent plate and reflecting the excitation light and the fluorescent light. According to this configuration, the wavelength conversion member includes the reflection member for reflecting the fluorescent light and excitation light emitted from the fluorescent plate. Thereby, the light emitted in the direction different from the predetermined direction of the light to be irradiated on the fluorescent plate is reflected in the predetermined direction by the reflecting plate, so that the amount of light emitted from the wavelength conversion member can be increased.
(6)前述形態之波長轉換構件,也可具備散熱構件,該散熱構件係朝外部排放前述螢光板的熱量。根據此構成,波長轉換構件具備用以將螢光板的熱量朝外部排放的散熱構件。藉此,於螢光板上,可有效率地將藉由激發光發出螢光時所產生的熱量排放至外部,因此可抑制因螢光板之溫度上升所引起的消光。因此,可抑制自波長轉換構件放射之光量的減少。(6) The wavelength conversion member of the aforementioned aspect may include a heat-dissipating member that radiates the heat of the phosphor plate to the outside. According to this configuration, the wavelength conversion member includes the heat dissipation member for radiating the heat of the phosphor plate to the outside. As a result, on the fluorescent plate, the heat generated when the fluorescence is emitted by the excitation light can be efficiently discharged to the outside, so that the extinction caused by the temperature rise of the fluorescent plate can be suppressed. Therefore, a decrease in the amount of light emitted from the wavelength conversion member can be suppressed.
(7)根據本發明之又一形態,提供一種光源裝置。該光源裝置也可具備:前述波長轉換構件;及光源,其用以對前述螢光板照射前述激發光。根據此構成,光源裝置具備對螢光板照射激發光的光源。當光源對螢光板照射激發光時,於螢光板上藉由激發光發出螢光。包含發出之螢光的光,在有較多是曝露於空隙中之螢光相的表面被反射,因此,可增加朝螢光板之外部放射的光量。藉此,可提高光源裝置的發光強度。(7) According to another aspect of the present invention, a light source device is provided. The light source device may include: the wavelength conversion member; and a light source for irradiating the excitation light to the fluorescent plate. According to this configuration, the light source device includes the light source for irradiating the fluorescent plate with excitation light. When the light source irradiates the fluorescent plate with excitation light, the fluorescent plate emits fluorescent light by the excitation light. The light including the emitted fluorescent light is reflected on the surface where the fluorescent phase exposed in the space is more abundant, so that the amount of light radiated to the outside of the fluorescent plate can be increased. Thereby, the luminous intensity of the light source device can be improved.
再者,本發明可以各種形式實現,例如,可以螢光板的製造方法、波長轉換構件的製造方法、光源裝置的製造方法、包含光源裝置的系統、光源裝置的控制方法、用以使製造裝置製造光源裝置的電腦程式等之形態實現。Furthermore, the present invention can be implemented in various forms, for example, a method for manufacturing a fluorescent plate, a method for manufacturing a wavelength conversion member, a method for manufacturing a light source device, a system including a light source device, a method for controlling a light source device, a method for manufacturing a manufacturing device. It is realized in the form of a computer program, etc. of the light source device.
[用以實施發明的形態][Form for carrying out the invention]
<第一實施形態>
圖1為具備第一實施形態之螢光板1的光源裝置3之示意圖。本實施形態之螢光板1為,當被光L1照射時會發出與光L1不同波長的光作為螢光,該光L1係由光源裝置3具備之、發光二極體(LED:Light Emitting Diode)或半導體雷射(LD:Laser Diode)等之光源9發射。螢光板1發出的螢光與螢光板1上之無助於螢光之產生的光一起,作為光L2朝既定之方向放射。如圖1所示,本實施形態之光源裝置3係一反射型光源裝置,且使用於頭燈、照明、投影機等各種光學設備中。光源裝置3具備前述光源9及波長轉換構件2。波長轉換構件2具備螢光板1、反射構件6、散熱構件7及接合層8。再者,為了方便說明,圖1中之各構件的各自大小關係,係以與實際關係不同之方式圖示。<First Embodiment>
FIG. 1 is a schematic diagram of a
螢光板1係由陶瓷燒結體形成的平板構件。於螢光板1上形成有供光L1入射的入射面1a、及位於入射面1a對向側的背面1b。螢光板1係將自入射面1a入射的光L1作為激發光而發出螢光。螢光板1於發出螢光時產生發熱。螢光板1之詳細構成,容待後述。The
反射構件6係以銀(Ag)作為主要成分的薄膜,且形成於螢光板1的背面1b。反射構件6係將光源9發出的光L1中之穿透螢光板1的光、及螢光板1發出的螢光中之朝向背面1b之方向的螢光朝入射面1a之方向反射。再者,反射構件6也可由銀合金或鋁(Al)等高反射率之材料形成。The
散熱構件7係由例如銅、銅鉬合金、銅鎢合金、鋁、氮化鋁等之具有熱傳導性高於螢光板1之材料形成的平板構件。散熱構件7用以將螢光板1的通過接合層8傳遞之熱量朝外部散熱。再者,散熱構件7也可為由前述材料構成之單層構造的構件、或者也可為由同種或不同之材料形成的多層構造的構件。此外,也可於散熱構件7之螢光板1側的表面7a配置用以提高與接合層8之密接性的金屬膜。The heat-dissipating
接合層8係配置於反射構件6與散熱構件7之間,且為由金(Au)及錫(Sn)所形成。接合層8係用以接合螢光板1與散熱構件7,並且將在螢光板1產生的熱量傳遞至散熱構件7。再者,接合層8除了可由金及錫形成外,也可為由其他材料形成的焊料,或者也可為將銀或銅(Cu)等的微細粉末燒結而成者。The
圖2為螢光板1的放大剖視圖。其次,對本實施形態之螢光板1的特徵進行說明。如圖2所示,螢光板1具有螢光相10、透光相20及空隙30。FIG. 2 is an enlarged cross-sectional view of the
螢光相10係由複數個螢光性結晶粒子構成。於本實施形態中,該螢光性結晶粒子具有以化學式A3
B5
O12
:Ce表示的組成(所謂之石榴石構造)。在此,所謂「A3
B5
O12
:Ce」,係顯示將Ce固溶於A3
B5
O12
中,利用Ce置換一部分元素A。化學式A3
B5
O12
:Ce中的元素A及元素B,分別由選自下述之元素群中的至少一種類之元素構成。
元素A:除了Sc、Y、Ce以外的鑭系元素(其中,元素A亦可進一步包含Gd)
元素B:Al(惟,元素B亦可進一步包含Ga)
再者,構成螢光相10之螢光性結晶粒子的組成及元素的種類,不限於前述組成及元素的種類,一個螢光相10中也可由複數種類之螢光性結晶粒子構成。The
透光相20係由複數個透光性結晶粒子構成。該透光性結晶粒子具有以化學式Al2
O3
表示的組成。透光相20係用以於螢光板1之內部供光透射,並且還作為將在螢光相10發出螢光時所產生的熱量有效率地傳遞至散熱構件7的傳熱路徑。透光相20的折射率小於螢光相10的折射率。The light-transmitting
空隙30係被螢光相10及透光相20包圍而形成。如圖2所示,螢光板1具有複數個空隙30。於本實施形態中,於螢光板1之包含空隙30之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙30之等效圓直徑的標準偏差為1.5以下。此外,等效圓直徑為0.4μm以上且50μm以下的空隙30中之等效圓直徑為1μm以上且小於10μm的空隙30之個數的比例為90%以上。這顯示螢光板1具有之複數個空隙30的等效圓直徑之偏差小。這是因為在後述之螢光板1的製造方法中,作為原料的造孔材料的粒徑一致,且造孔材料在原料內已被充分分散。於本實施形態中,較佳為,空隙30之等效圓直徑的平均在1μm至10μm之間,若等效圓直徑的平均在該範圍內,則可提高空隙之可視光的反射率。空隙30之折射率小於透光相20的折射率。也就是說,空隙30之折射率小於螢光相10的折射率。The void 30 is formed by being surrounded by the
再者,於本實施形態中,於如圖2所示之螢光板1之包含空隙30之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙30所佔之面積的比例,為3%以上且15%以下。換言之,可以說於螢光板1中,等效圓直徑為0.4μm以上且50μm以下的空隙30,以體積比3%以上且15%以下存在於螢光板1之內部。此外,於本實施形態中,於螢光板1之包含空隙30之剖面的剖面中,螢光相10對螢光相10及透光相20所佔螢光板1的總和之面積比為60%。換言之,螢光板1中的除了空隙30以外的部分,係由體積比為60%的螢光相10及體積比為40%的透光相20構成。較佳為,螢光相10之面積比為95%以下,以使燒結容易進行且難以形成空隙。Furthermore, in the present embodiment, in the cross section of the
其次,對螢光板1之製造方法進行說明。於螢光板1的製造方法中,首先,將經秤量而得之Al2
O3
、Y2
O3
、及CeO2
與純水一起投入球磨機中,進行16小時之粉碎混合。將藉由此粉碎混合而獲得之漿液乾燥,且使用乾燥後之漿液以噴霧式乾燥機進行造粒。接著,將既定量之造孔材料及既定量之黏結劑與被造粒之粒子混合,使用螺桿式之混煉機一面施加高剪切力一面進行混煉,而製作坯土。藉由一面施加高剪切力一面進行混煉,使造孔材料均勻地分散而變得難以凝聚,因此可降低因造孔材料之凝聚而引起的等效圓直徑的標準偏差。藉由使用擠壓成形機將製作的坯土成形為片材形狀,且於1700°C的大氣環境中進行燒成、燒結而製造螢光板1。Next, the manufacturing method of the
此外,於製造具備螢光板1之波長轉換構件2的情況,將銀蒸鍍或濺鍍於螢光板1的背面1b,對反射構件6進行製膜。接著,於將金錫焊料箔夾入成膜於螢光板1上之反射構件6與散熱構件7之間的狀態下,於氮氣環境中或氫氣環境中的迴焊爐中進行加熱。藉此,將螢光板1與散熱構件7接合,而製造波長轉換構件2。再者,也可塗佈金錫焊膏將螢光板1與散熱構件7接合,以取代使用金錫焊料箔。Moreover, when manufacturing the
並且,於製造具備波長轉換構件2之光源裝置3的情況,以光被照射於波長轉換構件2具備之螢光板1的入射面1a的方式設定光源9,且對波長轉換構件2及光源9進行封裝。藉此,製造光源裝置3。Furthermore, in the case of manufacturing the
接著,對本實施形態之螢光板1的評價試驗的內容及其結果進行說明。於本評價試驗中,藉由製作複數個螢光板之樣本,且測定光照射於每個樣本時之樣本的亮度,評價該樣本之光的取出效率。於本評價試驗中,著重於(i)空隙之等效圓直徑的標準偏差、(ii)空隙之等效圓直徑、及(iii)螢光板之剖面上之空隙的面積比之三個項目進行了評價試驗。Next, the contents and results of the evaluation test of the
於本評價試驗中,使用以下方法對樣本之特性進行了測定。 ‧空隙之等效圓直徑 切割樣本,且藉由FE-SEM觀察經鏡面加工後之切割面。於使用WinROOF的圖像解析中,於任意5個點取得剖面圖像,且使用截取法測定空隙之等效圓直徑。 ‧分散性 使用前述截取法計算所測定之空隙的等效圓直徑的分布(縱軸:頻率,橫軸:等效圓直徑)。此時,自顯示最大頻率的等效圓直徑計算頻率為全體之5%的等效圓直徑的差,作為分散性。 ‧標準偏差 自使用前述截取法所測定的空隙的等效圓直徑算出標準偏差。 ‧空隙的面積比 於藉由圖像處理而二值化的樣本的剖面圖像中,計算複數個空隙的總面積及空隙以外的部分之面積,並算出複數個空隙的總面積對剖面圖像整體的面積之比例。 ‧亮度 以樣本之厚度成為200μm之方式進行研磨,藉由對表面進行鏡面加工以製作亮度測量用之樣本。對該亮度測量用樣本照射波長為450nm的雷射(雷射直徑:0.4mm,雷射功率:5W),且使用亮度計測定反射方向的光。In this evaluation test, the characteristics of the samples were measured using the following methods. ‧Equivalent circle diameter of void The samples were cut, and the mirror-finished cut surfaces were observed by FE-SEM. In the image analysis using WinROOF, cross-sectional images were acquired at arbitrary 5 points, and the equivalent circle diameter of the void was measured by the interception method. ‧Dispersibility The distribution (vertical axis: frequency, horizontal axis: equivalent circle diameter) of the measured voids was calculated using the aforementioned interception method. At this time, the difference in the equivalent circle diameter at which the frequency is 5% of the whole is calculated from the equivalent circle diameter showing the maximum frequency, and used as dispersion. ‧standard deviation The standard deviation is calculated from the equivalent circle diameter of the voids measured using the interception method described above. ‧Area ratio of voids In the cross-sectional image of the sample binarized by image processing, the total area of the plurality of voids and the area of the portion other than the voids are calculated, and the ratio of the total area of the plurality of voids to the area of the entire cross-sectional image is calculated. . ‧brightness The sample was polished so that the thickness of the sample became 200 μm, and the surface was mirror-finished to prepare a sample for luminance measurement. The sample for luminance measurement was irradiated with a laser having a wavelength of 450 nm (laser diameter: 0.4 mm, laser power: 5 W), and the light in the reflection direction was measured using a luminance meter.
圖3為顯示第一實施形態之螢光板1的評價試驗之第一結果的圖。圖4為顯示第一實施形態之螢光板1的評價試驗之第二結果的圖。圖5為顯示第一實施形態之螢光板1的評價試驗之第三結果的圖。其次,對前述三個項目中的每一項目之評價試驗之結果進行說明。FIG. 3 is a diagram showing the first result of the evaluation test of the
(i)空隙之等效圓直徑的標準偏差
評價試驗用之樣本,係於遵循前述螢光板1之製造方法的方法中,藉由以一個樣本中之螢光相的比例為體積比60%之方式秤量Al2
O3
、Y2
O3
、及CeO2
,並使混合於被造粒之粒子內的造孔材料的粒度分布變化,製作樣本1、樣本2及樣本4的坯土。此外,樣本3係於不添加造孔材料之下製作坯土。圖3顯示關於空隙之等效圓直徑的標準偏差的試驗結果。圖3之表中顯示的樣本1係模擬本實施形態之螢光板1的樣本,其作為本次評價試驗中的基準樣本。如圖3所示,於標準偏差為1.5以下之情況,確認亮度為500cd/mm2
以上。另一方面,於無空隙的樣本3及標準偏差為7.4的樣本4中,確認亮度為350cd/mm2
以下。(i) Standard deviation of the equivalent circle diameter of the voids The samples used for the evaluation test are in the method following the above-mentioned manufacturing method of the
(ii)空隙之等效圓直徑
評價試驗用之樣本,係於遵循前述螢光板1之製造方法的方法中,藉由使造孔材料的粒度分布變化,製作樣本5〜8。圖4顯示關於空隙之等效圓直徑的試驗結果。圖4之表中顯示的樣本1,係也於圖3顯示的基準樣本。如圖4所示,於空隙的等效圓直徑為1.0μm之情況及10μm的情況,確認亮度成為較低的值(1.0μm:450cd/mm2
、10.0μm:360cd/mm2
)。另一方面,於空隙的等效圓直徑大於1.0μm且小於10μm(3.5μm、4.2μm、5、4μm)的情況,確認亮度達到600cd/mm2
以上,成為較高的值。(ii) The samples for the evaluation test of the equivalent circle diameter of the voids were prepared by changing the particle size distribution of the pore-forming material in the method following the manufacturing method of the
(iii)螢光板之剖面上之空隙的面積比
評價試驗用之樣本,係於遵循前述螢光板1之製造方法的方法中,藉由使造孔材料之添加量變化,製作樣本9〜12。圖5顯示關於螢光板之剖面上之空隙的面積比的試驗結果。圖5之表中顯示的樣本1,係也於圖3顯示的基準樣本。如圖5所示,於空隙的面積比為1%之情況及30%的情況,確認亮度成為較低的值(1%:330cd/mm2
、30%:280cd/mm2
)。另一方面,於空隙的面積比為3%以上且15%以下(3%、8%、15%)的情況,確認亮度達到670cd/mm2
以上,成為較高的值。(iii) The samples for the evaluation test of the area ratio of the voids on the cross section of the fluorescent plate were prepared by changing the amount of the pore-forming material in the method following the manufacturing method of the
根據以上說明之本實施形態的螢光板1,螢光板1具備之空隙30為,於螢光板1之包含空隙30之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙30之等效圓直徑的標準偏差為1.5以下。亦即,於螢光板1中,等效圓直徑為0.4μm以上且50μm以下的空隙30之等效圓直徑的偏差相對較小,螢光板1具有相似大小的空隙30。藉此,由於空隙30中之在螢光相10上的光的反射偏差小,因此與空隙30之等效圓直徑上存在較大偏差的情況比較,可提高空隙30的反射率。因此,可於螢光板1中提高光的取出效率。According to the
此外,根據本實施形態的螢光板1,於螢光板1中,等效圓直徑為0.4μm以上且50μm以下的空隙30中之等效圓直徑為1μm以上且小於10μm的空隙30,於個數的比例上成為90%以上。藉此,由於空隙30中之在螢光相10上的光的反射偏差進一步變小,因此可進一步提高空隙30的反射率。因此,可於螢光板1中進一步提高光的取出效率。In addition, according to the
此外,根據本實施形態的螢光板1,於螢光板1中,等效圓直徑為0.4μm以上且50μm以下的空隙30,在螢光板1之剖面中之面積的比例為3%以上且15%以下。於螢光板之剖面上的面積比例小之情況下,由於反射次數少因而反射率降低。此外,於螢光板之剖面上的面積比例大之情況下,由於相鄰空隙之間的距離變短,因此會重複反射進而造成光容易衰減。於本實施形態的螢光板1中,藉由抑制這些弊端的產生,可提高光之朝螢光板1的外部的取出效率。In addition, according to the
此外,當製造螢光板時,若藉由燒結形成之空隙增多,則空隙變成扭曲的形狀,因此等效圓直徑的標準偏差容易惡化。根據本實施形態的螢光板1,於螢光板1之包含空隙30之剖面的剖面中,螢光相10對螢光相10及透光相20所佔螢光板1的總和之面積比為60%。藉此,於本實施形態的螢光板1中,由於燒結容易而變得難以形成空隙,因此空隙難以形成扭曲的形狀,可抑制等效圓直徑的標準偏差的惡化。因此,可抑制朝螢光板1之外部的光之取出效率的降低。In addition, when the number of voids formed by sintering increases when the phosphor plate is manufactured, the voids become distorted, and thus the standard deviation of the equivalent circle diameter tends to deteriorate. According to the
此外,根據本實施形態之波長轉換構件2,波長轉換構件2具備反射自螢光板1放射的螢光及激發光的反射構件6。藉此,例如,如圖1所示,於螢光板1上被朝與應照射光L2之方向不同的方向放射的光,藉由反射構件6朝既定方向反射,因此可增加自波長轉換構件2放射的光量。Further, according to the
此外,根據本實施形態之波長轉換構件2,波長轉換構件2還具備將螢光板1之熱量排放至外部的散熱構件7。藉此,於螢光板1上,可有效率地將藉由激發光發出螢光時產生的熱量排放至外部,因此可抑制螢光板1之溫度上升而引起的消光。因此,可抑制自波長轉換構件2放射的光量的減少。In addition, according to the
此外,根據本實施形態之光源裝置3,光源裝置3具備將光L1照射於螢光板1上的光源9。當光源9將光L1照射於螢光板1時,螢光板1藉由光L1之一部分的光發出螢光。螢光板1發出的螢光,在有較多是曝露於空隙30中的螢光相10的表面被反射,因此,可增加朝螢光板1的外部放射的光量。藉此,可提高光源裝置3的發光強度。Further, according to the
<本實施形態之變形例> 本發明不限於前述實施形態,可於不超出其實質內容的範圍內以各種各樣之形式實施,例如也可進行如下的變形。<Variation of this embodiment> The present invention is not limited to the above-described embodiments, and can be implemented in various forms within the scope of the essential content, and for example, the following modifications can be made.
[變形例1]
於前述實施形態中,等效圓直徑為0.4μm以上且50μm以下的空隙30中之90%以上的空隙30之等效圓直徑,係假定為1μm以上且小於10μm。然而,等效圓直徑為1μm以上且小於10μm之空隙30的比例,不限於此。也可小於90%,只要等效圓直徑為0.4μm以上且50μm以下的空隙之等效圓直徑的標準偏差為1.5以下即可。[Variation 1]
In the aforementioned embodiment, the equivalent circle diameter of 90% or more of the
[變形例2]
於前述實施形態中,於螢光板1之包含空隙30之剖面的剖面中,等效圓直徑為0.4μm以上且50μm以下的空隙30所佔之面積的比例,係假定為3%以上且15%以下。然而,等效圓直徑為0.4μm以上且50μm以下的空隙30所佔之面積的比例,不限於此。既可小於3%也可大於15%,但是若空隙過少,則在空隙之反射效果小,若空隙過多,則因反射次數增加而使光衰減進而造成反射率下降,因此較佳為3%以上且15%以下。[Variation 2]
In the aforementioned embodiment, in the cross section of the
[變形例3]
於前述實施形態中,於螢光板1之包含空隙30之剖面的剖面中,螢光相10對螢光相10及透光相20所佔螢光板1的總和之面積比係假定為60%。於螢光相10的面積比小於10%或大於95%之情況下,由於燒結體本身之燒結性無法提高,因此容易於因有意圖地添加之造孔材料而產生的空隙之外生成空隙。若這種之無意圖之空隙增多,容易形成扭曲形狀之空隙,因此可能造成空隙之等效圓直徑的標準偏差惡化。因此,較佳為,螢光相10之面積比為10%以上且95%以下,以使於螢光板1之燒結時盡可能不形成無意圖之空隙。[Variation 3]
In the foregoing embodiment, in the cross section of the
[變形例4]
於前述實施形態中,光源裝置3係假定為反射型之光源裝置。然而,螢光板1也可應用於透射型之光源裝置。[Variation 4]
In the aforementioned embodiment, the
以上,雖然根據實施形態及變形例對本態樣進行了說明,但前述態樣之實施形態係為了便於理解本態樣,並非用以限制本態樣。本態樣可於不超出實質內容及申請專利範圍的情況下進行變更、改良,並且其等效物亦為本態樣所涵蓋。此外,於本說明書中只要其技術特徵不是必須說明的特徵,也可適宜地刪除。In the above, although this aspect has been described based on the embodiment and the modified example, the embodiment of the aforementioned aspect is intended to facilitate understanding of this aspect and is not intended to limit this aspect. This aspect can be changed and improved without exceeding the substantive content and the scope of the patent application, and its equivalents are also covered by this aspect. In addition, in this specification, as long as the technical features are not necessarily described, they can be deleted as appropriate.
1:螢光板 2:波長轉換構件 3:光源裝置 6:反射構件 7:散熱構件 8:接合層 9:光源 10:螢光相 20:透光相 30:空隙1: fluorescent plate 2: wavelength conversion member 3: Light source device 6: Reflective member 7: heat dissipation components 8: Bonding layer 9: Light source 10: Fluorescent phase 20: Translucent phase 30: void
圖1為具備第一實施形態之螢光板的光源裝置之示意圖。 圖2為螢光板的放大剖視圖。 圖3為顯示第一實施形態之螢光板的評價試驗之第一結果的圖。 圖4為顯示第一實施形態之螢光板的評價試驗之第二結果的圖。 圖5為顯示第一實施形態之螢光板的評價試驗之第三結果的圖。FIG. 1 is a schematic diagram of a light source device including the phosphor plate of the first embodiment. FIG. 2 is an enlarged cross-sectional view of the phosphor plate. FIG. 3 is a diagram showing the first result of the evaluation test of the phosphor plate of the first embodiment. FIG. 4 is a diagram showing the second result of the evaluation test of the phosphor plate of the first embodiment. FIG. 5 is a diagram showing the third result of the evaluation test of the phosphor plate of the first embodiment.
Claims (7)
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CN101405368B (en) * | 2006-03-21 | 2012-05-30 | 皇家飞利浦电子股份有限公司 | Electroluminescent device |
JP5271523B2 (en) * | 2007-09-28 | 2013-08-21 | 岡谷電機産業株式会社 | Method for producing fluorescent material carrier |
US8354784B2 (en) * | 2010-09-28 | 2013-01-15 | Intematix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
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JP2012243701A (en) * | 2011-05-24 | 2012-12-10 | Stanley Electric Co Ltd | Light source device and lighting system |
TWI523278B (en) * | 2011-08-05 | 2016-02-21 | 晶元光電股份有限公司 | Wavelength conversion structure, manufacturing methods thereof, and lighting emitting device including the wavelength conversion structure |
JP6413673B2 (en) * | 2014-11-13 | 2018-10-31 | ウシオ電機株式会社 | Fluorescent light source device |
JP6646934B2 (en) * | 2015-02-10 | 2020-02-14 | アルパッド株式会社 | Semiconductor light emitting device and method of manufacturing semiconductor light emitting device |
JP5989268B2 (en) * | 2015-02-18 | 2016-09-07 | 日東電工株式会社 | Phosphor ceramics, sealed optical semiconductor element, circuit board, optical semiconductor device, and light emitting device |
CN106896632A (en) * | 2015-12-03 | 2017-06-27 | 精工爱普生株式会社 | Fluorophor, Wavelength changing element, light supply apparatus and projecting apparatus |
JP2017138470A (en) * | 2016-02-03 | 2017-08-10 | セイコーエプソン株式会社 | Reflection element, wavelength conversion element, light source device, and projector |
JP6288575B2 (en) * | 2016-03-10 | 2018-03-07 | パナソニックIpマネジメント株式会社 | Light emitting device |
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JP6365656B2 (en) * | 2016-12-28 | 2018-08-01 | ウシオ電機株式会社 | Fluorescent light source device and manufacturing method thereof |
JP7268315B2 (en) * | 2017-12-12 | 2023-05-08 | 日本電気硝子株式会社 | WAVELENGTH CONVERSION MEMBER, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE |
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CN115003957A (en) | 2022-09-02 |
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