TW202201143A - Method for manufacturing transmissive optical element, exposure device, manufacturing method of objects, and transmissive optical element comprising a first procedure of forming an antireflection film, and a second procedure of removing the antireflection film formed in the first procedure in the thickness direction of the antireflection film - Google Patents

Abstract

Provided is a method for manufacturing a transmissive optical element, comprising a first procedure of forming an antireflection film on a surface of the optical element, and a second procedure of removing the antireflection film formed in the first procedure in a thickness direction of the antireflection film. In the second procedure, the anti-reflection film is removed in the thickness direction, so that at least a part of the anti-reflection film remains even in the region where the anti-reflection film is removed.

Description

Manufacturing method of transmissive optical element, exposure apparatus, manufacturing method of article, and transmissive optical element

The present invention relates to a method for manufacturing a transmissive optical element, an exposure apparatus, a method for manufacturing an article, and a transmissive optical element.

An exposure apparatus including an illumination optical system for illuminating an original plate and a projection optical system for projecting the pattern of the original plate illuminated by the illumination optical system onto a substrate is used in a lithography process for manufacturing articles such as semiconductor devices. By projecting the pattern of the original plate onto the substrate, the pattern is transferred onto a resist layer (photosensitive agent) disposed (coated) on the surface of the substrate. In the exposure apparatus, if the illumination of the original plate is not uniform, there is a possibility that the transfer of the pattern to the resist layer on the substrate may be deteriorated. Therefore, in the illumination optical system, in order to illuminate the original plate with uniform illuminance, a rod-type optical integrator or an optical integrator including a plurality of wavefront dividing elements arranged two-dimensionally is used. On the other hand, in the illumination optical system, unevenness in the illuminance distribution on the illuminated surface may be confirmed due to contamination of the optical system, decentering, unevenness of the antireflection film, and the like. Then, Japanese Patent Laid-Open No. 2006-210554 discloses a technique in which a filter having a dot pattern (shading object) provided on a quartz substrate is arranged at a position optically conjugated to the illuminated surface, The illuminance distribution on the illuminated surface is made uniform by changing the density (transmittance distribution) of the dots.

[Problems to be solved by the invention] However, in the technique disclosed in Japanese Patent Application Laid-Open No. 2006-210554, it is difficult to make the illuminance distribution on the illuminated surface uniform with sufficient accuracy. For example, when it is necessary to slightly change the transmittance with an optical filter, since the number of dots decreases, the error in transmittance due to the error in the size of the dots increases, and it is impossible to accurately correct the illuminated surface. illuminance distribution on. The present invention provides a technique related to a transmissive optical element which is useful for uniformizing the illuminance distribution in the illuminated surface. [Technical means to solve the problem] In order to achieve the above object, a manufacturing method as an aspect of the present invention is a manufacturing method for manufacturing a light-transmitting optical element, comprising: a first process of forming an antireflection film on the surface of the optical element; and The second procedure is to remove the anti-reflection film formed in the first procedure in the thickness direction of the anti-reflection film; in the second procedure, the anti-reflection film is removed in the thickness direction so that even in the At least a part of the said anti-reflection film remains in the area|region from which the said anti-reflection film was removed. Hereinafter, other objects or other aspects of the present invention will become apparent from the embodiments described with reference to the drawings. [Inventive effect] According to the present invention, for example, it is possible to provide a technique related to a transmissive optical element which is useful for uniformizing the illuminance distribution in the illuminated surface.

Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiment does not limit the invention which concerns on a claim. Although a plurality of features are described in the embodiments, these features are not all essential features of the invention, and a plurality of features may be arbitrarily combined. Furthermore, in the drawings, the same or the same components are denoted by the same reference numerals, and overlapping descriptions are omitted. FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus 100 as one aspect of the present invention. The exposure apparatus 100 is, for example, a lithography apparatus used for a manufacturing process (lithography process) of a semiconductor device and the like to form a pattern on a substrate. The exposure apparatus 100 exposes the substrate W via the original plate R, and is a step-and-scan exposure device (scanner) in this embodiment, and exposes (scans) the substrate W while moving the original plate R and the substrate W in the scanning direction. exposure) to transfer the pattern of the original R onto the substrate. However, the exposure apparatus 100 may also adopt a step-and-repeat method or other exposure methods. As shown in FIG. 1 , the exposure apparatus 100 includes an illumination optical system 101 , an original plate drive unit 102 , a projection optical system 103 , a substrate drive unit 104 , and a measurement unit 105 . In the present embodiment, a coordinate system is defined such that the axis along the normal direction of the substrate W is the Z axis, and the axis along the direction perpendicular to each other in a plane parallel to the substrate W is the X axis and the Y axis. The illumination optical system 101 illuminates the original plate R arranged on the illuminated surface (object surface of the projection optical system 103 ) using the light (light beam) from the light source 1 . The light source 1 includes, for example, an ultra-high pressure mercury lamp that emits light such as i-line (wavelength 365 nm). However, the light source 1 is not limited to this, and may be a KrF excimer laser emitting light with a wavelength of 248 nm, an ArF excimer laser emitting light with a wavelength of 193 nm, or an F2 laser emitting light with a wavelength of 157 nm . In addition, the light source 1 may be an EUV light source that emits light of extreme ultraviolet wavelengths (EUV light) of about 11 nm to 14 nm. On the original plate R, a pattern (for example, a circuit pattern) to be transferred to the substrate W is formed. The original plate R is composed of a material that transmits light from the light source 1 (illumination optical system 101 ), for example, quartz glass as a base material. The original plate drive unit 102 includes, for example, a movable original plate stage that holds the original plate R, and a master plate drive mechanism that drives the original plate stage with respect to the X-axis and the Z-axis. The projection optical system 103 projects the pattern of the original plate R illuminated by the illumination optical system 101 on the substrate W. The projection optical system 103 includes an imaging optical system, the front focus is arranged on the surface (position) on which the original plate R is arranged, and the rear focus is arranged on the surface where the substrate W is arranged. In other words, the projection optical system 103 sets the arrangement position of the original plate R and the arrangement position of the substrate W into a conjugate relationship. The substrate W is a substrate to which the pattern of the original plate R is transferred, and has a resist layer (photosensitive material) on the surface thereof. The substrate drive unit 104 includes a movable substrate stage that holds the substrate W, and a substrate drive mechanism that drives the substrate stage with respect to the X, Y, and Z axes (and their rotational directions, ie, ωx, ωy, and ωz). The measurement unit 105 includes, for example, a light quantity sensor, and measures the illuminance distribution formed on the illuminated surface. In the present embodiment, the measurement unit 105 is arranged on the object surface of the projection optical system 103 , specifically, on the original plate stage that constitutes the original plate drive unit 102 . Hereinafter, the illumination optical system 101 will be described in detail. The illumination optical system 101 includes a first relay lens 3 , a folding mirror M1 , an optical integrator 4 , a second relay lens 5 , and a folding mirror M2 . The first relay lens 3 and the folding mirror M1 constitute the first illumination optical system 10 , and the second relay lens 5 and the folding mirror M2 constitute the second illumination optical system 12 . Light from the first illumination optical system 10 enters the second illumination optical system 12 via the optical integrator 4 . The elliptical mirror 2 has a first focal point and a second focal point, and condenses the light from the light source 1 arranged at the first focal point to the second focal point. The first relay lens 3 includes an imaging optical system, and its front focal point is arranged on the second focal point of the elliptical mirror 2 , and its rear focal point is arranged on the incident surface of the optical integrator 4 . In other words, the first relay lens 3 has a conjugate relationship between the second focal point of the elliptical mirror 2 and the incident surface of the optical integrator 4 . In this way, in the present embodiment, the illumination optical system 101 includes the first illumination optical system 10 in which the second focal point of the elliptical mirror 2 and the incident surface of the optical integrator 4 are in a conjugate relationship, but may include no such A relational first illumination optical system. In the vicinity of the pupil plane of the first relay lens 3, a filter (not shown) for blocking light of a specific wavelength band is arranged, and the exposure wavelength (the wavelength of light for exposing the substrate W) is defined by the filter. The optical integrator 4 is an optical integrator of an internal reflection type including an incident surface, a reflection surface, and an emission surface ES. The optical integrator 4 forms a uniform light intensity distribution (illuminance distribution) on the exit surface ES by reflecting the light incident on the incident surface multiple times by the reflecting surface. In the present embodiment, the optical integrator 4 has a rectangular shape in a cross section (XY plane) orthogonal to the optical axis AX, but may have another shape (eg, a polygon). In addition, the optical integrator 4 is not limited to an internal reflection type optical integrator, and may be a microlens array type optical integrator such as a fly's eye lens. The second illumination optical system 12 illuminates the original plate R with light from the exit surface ES of the optical integrator 4 . The second relay lens 5 includes an imaging optical system, and its front focal point is arranged on the exit surface ES of the optical integrator 4 , and its rear focal point is arranged on the surface on which the original plate R is arranged. In other words, in the second relay lens 5, the emission surface ES of the optical integrator 4 and the arrangement surface of the original plate R are in a conjugate relationship. The second relay lens 5 forms the light intensity distribution (illuminance distribution) of the output surface ES of the optical integrator 4 on the arrangement surface of the original plate R. As shown in FIG. In the exposure apparatus 100 in the present embodiment, the second illumination optical system 12 incorporates a light-transmitting optical element 6 that functions as a correction filter for correcting the illuminance distribution on the illuminated surface. The optical element 6 is arranged on the illuminated surface (for example, the surface on which the original plate R is arranged) of the illumination optical system 101 , a conjugated surface in a conjugate relationship with the illuminated surface, or in the vicinity of the illuminated surface or the conjugated surface. In the present embodiment, the optical element 6 is arranged in the vicinity of the surface on which the original plate R is arranged, and specifically, the optical film formed on the surface of the optical element 6, which will be described later, is arranged in the closest projection of the illumination optical system 101 so that the original plate R faces the original plate R. surface on the side of the optical system 103 . FIG. 2 is a schematic diagram showing the configuration of the light-transmitting optical element 6 . As shown in FIG. 2 , the optical element 6 has an optical thin film C which is formed on at least one surface (surface of the optical element 6 ) of the base material 7 (base material) and functions (acts) as an antireflection film. In the present embodiment, the optical film C is partially removed by the removal amount δ in the thickness direction (Z-axis direction) of the optical film C with respect to any portion (portion) of the optical film C having the film thickness (maximum film thickness) D , thereby forming a film thickness distribution in the optical film plane. In this way, the optical film C exists over the surface of the optical element 6 (the base material 7 ), and has a film thickness distribution in the surface. In other words, the optical film C includes a portion where the optical film C is partially removed in the thickness direction within the surface of the optical element 6, and at least a part of the optical film C remains in this portion. The antireflection film as the optical thin film C is formed by stacking a plurality of thin films formed of substances having different refractive indices on the base material 7, and the reflectance is lowered by the interference of light to obtain a high transmittance as a whole. Each thin film constituting the antireflection film is usually adjusted in number, material, thickness, etc. of the thin film so as to obtain a predetermined transmittance or reflectance, thereby optimizing light interference conditions. Therefore, the transmittance or reflectance of the optical film C can be changed according to the removal amount δ when the optical film C is partially removed in the thickness direction. In addition, the type (film type) of the optical film C is not limited to a dielectric multilayer film, and may be a single-layer film. On the other hand, when the optical film C formed on the base material 7 is completely removed in the thickness direction, the portion from which the optical film C has been completely removed in the thickness direction no longer functions as an antireflection film. However, for the purpose of correcting the illuminance distribution in the illuminated surface, that is, making the illuminance distribution uniform, the removal amount δ of the optical film C may be the film thickness of the outermost film among the plurality of films constituting the antireflection film (film thickness distribution) degree of adjustment. Therefore, in the present embodiment, the local removal of the optical film C in the thickness direction has very little influence on the function as an antireflection film, and can be ignored. Hereinafter, a method of manufacturing the optical element 6 will be described with reference to FIG. 3 . In S01 (first procedure), the optical thin film C that functions as an antireflection film is formed on the surface of the base material 7 . The optical film C formed in S01 is adjusted to optimize the light interference conditions by adjusting the number, material, thickness, etc. of the films constituting the optical film C as described above. In the present embodiment, the optical thin film C having a uniform film thickness D is formed on the surface of the base material 7 . In S02 (second procedure), the optical film C formed in S01 is removed in the thickness direction. At this time, the optical film C is removed in the thickness direction so that at least a part of the optical film C remains even in the region where the optical film C is removed. Therefore, even after S02, the optical film C formed on the surface of the base material 7 remains at least a part of the optical film C in the thickness direction of the optical film C throughout the surface of the base material 7. In the present embodiment, the optical film C is partially removed by the removal amount δ in the thickness direction of the optical film C with respect to any portion of the optical film C having the film thickness D. Thereby, as shown in FIG. 2, the transmissive optical element 6 in which the optical thin film C which exists over the surface of the base material 7 and has a film thickness distribution in this surface can be manufactured. Here, the procedure of removing the optical film C in the thickness direction (the procedure of S02 ) will be described in detail with reference to FIG. 4 . In S21 (third procedure), the illuminance distribution formed on the illuminated surface by the light from the illumination optical system 101 in which the transmissive optical element 6 is removed is acquired. Specifically, the measuring unit 105 provided on the original plate stage is arranged on the surface on which the original plate R is arranged, and the measuring unit 105 (light quantity sensor) measures the illumination optical system 101 from the state in which the transmissive optical element 6 is removed. , so as to obtain the illuminance distribution in the illuminated surface. FIG. 5( a ) is a diagram showing an example of the illuminance distribution on the illuminated surface acquired in S21 . In the illuminance distribution shown in FIG. 5( a ), the illuminance locally decreases at the coordinate a in the illuminated surface. In S22, the transmittance distribution in the optical film C that functions as an antireflection film is designed to cancel the illuminance distribution in the illuminated surface acquired in S21. FIG.5(b) is a figure which shows an example of the transmittance|permeability distribution in the optical film C designed in S22. The transmittance distribution shown in FIG. 5( b ) is a transmittance distribution designed for the illuminance distribution shown in FIG. 5( a ), and the coordinate A in the optical film plane corresponding to the coordinate a in the illuminated area has the maximum transmittance Tmax. In S23 (4th procedure), the film thickness distribution of the optical film C is determined based on the illuminance distribution in the illuminated surface acquired in S21 and the transmittance distribution in the optical film C designed in S22. In addition, the determination of the film thickness distribution of the optical film C refers to determining the portion of the surface of the optical element 6 (substrate 7 ) where the optical film C should be removed (coordinates on the surface of the optical film), and the thickness of the optical film C in this portion. Removal amount δ. Specifically, as shown in FIG. 5( c ), the illuminance distribution shown in FIG. 5( a ) and the transmittance distribution shown in FIG. 5( b ) are matched to make the illuminance on the illuminated surface The film thickness distribution of the optical thin film C is determined so that the distribution becomes uniform (that is, so that the transmittance distribution shown in FIG. 5( b ) is realized. Referring to FIG. 5( c ), as the film thickness distribution of the optical film C, the removal amount δ at the coordinate A in the plane of the optical film having the maximum transmittance Tmax is set to zero, and the maximum transmittance Tmax and each coordinate (position) ) and the transmittance difference (Tmax-T) of the transmittance T at ) to determine the removal amount δ. FIG. 6 shows the relationship between the transmittance difference (Tmax-T) and the removal amount δ. By obtaining such a relationship in advance, the removal amount δ corresponding to the transmittance difference (Tmax-T) can be determined for each coordinate (position) in the optical film surface. In S24, according to the film thickness distribution determined in S23 (removal amount δ in each coordinate in the optical film plane), the optical film C formed on the base material 7 in S01 is subjected to localization of the optical film C in the thickness direction. Removal processing to remove. Thereby, the optical film C exists over the surface of the base material 7 and has a film thickness distribution corresponding to the illuminance distribution to be formed by the light transmitted through the optical element 6 in the surface of the base material 7 . In addition, the specific method of the removal process implemented in S24 is mentioned later. In S25, the optical element 6 to which the removal process was performed in S24 is assembled to the illumination optical system 101. In the present embodiment, as described above, the optical element 6 is attached to the surface closest to the projection optical system 103 of the illumination optical system 101 in the direction in which the optical film C and the original plate R face each other. In S26, the illuminance distribution formed on the illuminated surface by the light from the illumination optical system 101 in which the transmissive optical element 6 is incorporated is acquired. Specifically, the measuring unit 105 provided on the original plate stage is arranged on the surface on which the original plate R is arranged, and the measuring unit 105 (light quantity sensor) measures the illumination optical system 101 from the state in which the transmissive optical element 6 is incorporated. , so as to obtain the illuminance distribution in the illuminated surface. Fig. 5(d) is a diagram showing an example of the illuminance distribution on the illuminated surface acquired in S26. The illuminance distribution shown in (d) of FIG. 5 makes the illuminance uniform in the illuminated surface. In this way, according to the present embodiment, it is possible to manufacture (provide) the transmissive optical element 6 that realizes a uniform illuminance distribution in the illuminated surface. The exposure apparatus 100 including the illumination optical system 101 incorporating such a transmissive optical element 6 can uniformly illuminate the original plate R, and can satisfactorily transfer the pattern of the original plate R to the resist layer on the substrate. An example of a specific method of the removal process ( S24 ) of partially removing the optical film C in the thickness direction will be described with reference to FIG. 7 . In the removal process, so-called IBF (Ion Beam Figuring) may be used. The optical film C in the part to be removed is removed in the thickness direction by irradiating an ion beam corresponding to the part to be removed. FIG. 7 is a schematic diagram showing the configuration of an ion beam processing apparatus 200 for realizing IBF. The ion beam processing apparatus 200 includes a chamber 21 for maintaining a vacuum state, an ion beam generation unit 22 , a drive stage 24 , and a current density measurement unit 25 . The ion beam generation unit 22 , the drive stage 24 , and the current density measurement unit 25 are provided inside the chamber 21 . The ion beam 23 from the ion beam generator 22 is irradiated to the transmissive optical element 6 as the workpiece held (installed) on the drive table 24 , specifically the optical film C formed on the substrate 7 . By scanning and driving the drive stage 24, the ion beam 23 is irradiated to an arbitrary portion (position) of the optical film C, thereby performing a removal process of partially removing the optical film C in the thickness direction. The beam distribution of the ion beam 23 can be measured by irradiating the ion beam 23 from the ion beam generating part 22 to the current density measuring part 25 provided in the drive stage 24 . By optimizing the beam distribution of the ion beam 23 measured by the current density measuring unit 25 with respect to processing conditions such as the removal amount δ (processing amount) of the optical film C and the processing pitch, high-precision removal processing can be realized. By using such an ion beam processing apparatus 200 for the removal processing ( S24 ), it is possible to manufacture (provide) a transmission that accurately corrects the unevenness of the illuminance distribution in the illuminated surface, that is, realizes a uniform illuminance distribution in the illuminated surface type of optical element 6. 8, another example of the specific method of the removal process (S24) which partially removes the optical film C in the thickness direction is demonstrated. In the removal process, so-called MRF (Magneto-Rheological Finishing) can also be used in which a part to be removed from the optical film C is polished with a magnetic fluid containing abrasive grains, and the part is The optical film C is removed in the thickness direction. MRF is a high-precision grinding technology using magnetic force. Specifically, as shown in FIG. 8 , the magnetic fluid 31 containing abrasive grains is made to flow between the optical film C formed on the base material 7 and the stage 32 . Then, when the magnetic force 34 is applied to the magnetic fluid 31 from the electromagnet 33 , the magnetic abrasive grains contained in the magnetic fluid 31 are brought into contact with the surface of the optical film C due to the influence of the magnetic force 34 . At this time, the magnetic fluid 31 flows on the surface of the optical film C by the drive stage 32 , and the optical film C is polished by the magnetic fluid 31 . By controlling the magnetic force 34 obtained by the electromagnet 33, a highly accurate removal process can be realized. By using such a high-precision polishing technique for the removal process ( S24 ), it is possible to manufacture (provide) a transmissive type capable of accurately correcting the unevenness of the illuminance distribution in the illuminated surface, that is, realizing a uniform illuminance distribution in the illuminated surface the optical element 6. Another example of the specific method of the removal process ( S24 ) of partially removing the optical film C in the thickness direction will be described with reference to FIGS. 9( a ) to ( d ). In the removal process, a process technique of removing the optical thin film C in the thickness direction by etching correspondingly to the part to be removed from the optical thin film C, for example, an etching technique using a resist layer may be used. Specifically, first, as shown in FIG. 9( a ), a resist layer 41 is applied on the optical film C formed on the base material 7 . Next, as shown in FIG. 9( b ), exposure and development using an exposure apparatus or the like are performed corresponding to the portion 42 from which the optical film C has been removed, thereby removing the resist layer 41 in the portion 42 . Next, as shown in FIG.9(c), the part 42 is etched, and the optical film C in the part 42 is removed (shaved off). Then, as shown in (d) of FIG. 9 , the resist layer 41 applied on the optical film C is peeled off. By going through the procedures shown in FIGS. 9( a ) to ( d ), it is possible to achieve highly accurate removal processing of any portion of the optical film C. FIG. By using such an etching technique for the removal process ( S24 ), it is possible to manufacture (provide) a transmissive optical device that accurately corrects the unevenness of the illuminance distribution in the illuminated surface, that is, realizes a uniform illuminance distribution in the illuminated surface Element 6. 10 (a)-(c), still another example of the specific method of the removal process (S24) which partially removes the optical film C in the thickness direction is demonstrated. In the removal process, a process technique of removing the optical film C in the thickness direction of the part from which the optical film C is to be removed by applying a release agent to the part can also be used. As a release agent, HF (hydrofluoric acid) is used, for example. Specifically, first, as shown in FIG. 10( a ), on the optical film C formed on the base material 7 , the mask 51 including the opening 52 is arranged. Next, as shown in FIG. 10( b ), by flowing the release agent 53 into the opening 52 of the mask 51 , the optical film C in the portion exposed by the opening 52 is removed (peeled). And as shown in FIG.10(c), the mask 51 arrange|positioned on the optical film C is removed. By going through the procedures shown in (a) to (c) of FIG. 10 , it is possible to realize a high-precision removal process for an arbitrary part of the optical film C. FIG. By applying such a technique using a release agent to the removal process ( S24 ), it is possible to manufacture (provide) transmission that corrects the unevenness of the illuminance distribution in the illuminated surface with high precision, that is, realizes a uniform illuminance distribution in the illuminated surface type of optical element 6. The article manufacturing method in the embodiment of the present invention is suitable for manufacturing articles such as semiconductor elements, flat panel displays, liquid crystal display elements, MEMS, and the like. The manufacturing method includes: a process of exposing a substrate coated with a photosensitive agent using the above-mentioned exposure apparatus 100; and a process of developing the exposed photosensitive agent. In addition, using the pattern of the developed photosensitive agent as a mask, an etching process or an ion implantation process is performed on the substrate to form a circuit pattern on the substrate. These procedures such as exposure, development, and etching are repeated to form a circuit pattern composed of a plurality of layers on the substrate. In the subsequent process, the substrate on which the circuit pattern is formed is diced (processed), and the wafer mounting, bonding, and inspection processes are performed. In addition, the manufacturing method may include other well-known procedures (oxidation, film formation, evaporation, doping, planarization, resist stripping, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the prior art. The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, in order to disclose the scope of the present invention, the scope of claims is attached.

1: Light source 2: Oval mirror 3: 1st relay lens 4: Optical integrator 5: 2nd relay lens 6: Optical Components 7: Substrate 10: 1st Illumination Optical System 12: Second illumination optical system 31: Magnetic Fluids 32: Carrier 33: Electromagnet 34: Magnetic 41: resist layer 42: The part where the optical film should be removed 51: Mask 52: Opening 53: Stripper 100: Exposure device 101: Illumination Optical System 102: Original drive department 103: Projection Optical System 104: Substrate drive part 105: Measurement Department AX: Optical axis C: Optical Film D: film thickness ES: ejection surface M1: Folding Mirror M2: Folding Mirror R: original W: substrate δ: Removal amount

1 is a schematic diagram showing the configuration of an exposure apparatus as one aspect of the present invention. [ Fig. 2] Fig. 2 is a schematic diagram showing the configuration of a light-transmitting optical element. [ Fig. 3] Fig. 3 is a flowchart for explaining a manufacturing method for manufacturing an optical element as one aspect of the present invention. [ Fig. 4 ] is a flowchart for explaining in detail the routine of S02 shown in Fig. 3 . [ Fig. 5] Fig. 5 is a diagram for explaining the procedure of S02 shown in Fig. 3 in detail. [ Fig. 6] Fig. 6 is a diagram for explaining the procedure of S02 shown in Fig. 3 in detail. [ Fig. 7] Fig. 7 is a diagram for explaining a specific method of the removal process of S24 shown in Fig. 4 . [ Fig. 8] Fig. 8 is a diagram for explaining a specific method of the removal process of S24 shown in Fig. 4 . [ Fig. 9] Fig. 9 is a diagram for explaining a specific method of the removal process of S24 shown in Fig. 4 . 10 is a diagram for explaining a specific method of the removal process of S24 shown in FIG. 4 .

6: Optical Components

7: Substrate

C: Optical Film

D: film thickness

δ: Removal amount

Claims (12)

A method of manufacturing a transmissive optical element, comprising: The first process, which is to form an anti-reflection film on the surface of the optical element; and a second process of removing the anti-reflection film formed in the first process in the thickness direction of the anti-reflection film; In the second procedure, the anti-reflection film is removed in the thickness direction so that at least a part of the anti-reflection film remains in the region from which the anti-reflection film is removed. The manufacturing method of claim 1, wherein, In the second process, the portion of the surface where the anti-reflection film is to be removed is irradiated with an ion beam to remove the anti-reflection film in the portion in the thickness direction. The manufacturing method of claim 1, wherein, In the second process, the portion of the surface from which the antireflection film should be removed is polished using a magnetic fluid containing abrasive grains, and the antireflection film in the portion is removed in the thickness direction. The manufacturing method of claim 1, wherein, In the second procedure, the anti-reflection film is removed in the thickness direction in the portion of the surface where the anti-reflection film is to be removed by etching. The manufacturing method of claim 1, wherein, In the above-mentioned second procedure, the anti-reflection film in the part is removed in the thickness direction by applying a release agent to the part of the surface where the anti-reflection film should be removed. The manufacturing method of claim 1, wherein, The aforementioned optical element is incorporated into an optical system for illuminating the illuminated surface, The aforementioned manufacturing method also has: a third procedure for obtaining an illuminance distribution formed on the illuminated surface by using the light from the optical system in which the optical element is removed; and The fourth procedure is to determine a portion in the surface where the anti-reflection film should be removed and the amount of removal of the anti-reflection film in the portion based on the illuminance distribution. The manufacturing method of claim 6, wherein, In the fourth procedure, the portion and the removal amount are determined so that an illuminance distribution in which the illuminance distribution is canceled by the light transmitted through the optical element is formed on the illuminated surface. An exposure device that exposes a substrate via an original plate, The aforementioned exposure apparatus has: an illumination optical system that illuminates the aforementioned original plate; and a projection optical system for projecting the pattern of the original plate illuminated by the illumination optical system onto the substrate, The aforementioned illumination optical system includes a transmissive optical element having an antireflection film formed on its surface, The antireflection film is present over the surface and has a film thickness distribution in the surface so that the light transmitted through the optical element is formed on the surface where the original plate is arranged by the light from the illumination optical system in the state where the optical element is removed The illuminance distribution formed on the offset is the illuminance distribution. The exposure apparatus of claim 8, wherein, The said optical element is arrange|positioned on the illuminated surface of the said illumination optical system or the conjugated surface of the said illuminated surface. The exposure apparatus of claim 8, wherein, The said optical element is arrange|positioned on the surface closest to the said projection optical system side of the said illumination optical system so that the said antireflection film may face the said original plate. A method of manufacturing an article, comprising: A procedure for exposing a substrate using the exposure apparatus of claim 8; a procedure for developing the exposed aforementioned substrate; and The process of making an article from the developed substrate. A transmissive optical element having an antireflection film formed on the surface of the optical element, The antireflection film is present throughout the surface, and has a film thickness distribution in the surface corresponding to the illuminance distribution to be formed by the light transmitted through the optical element.

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