TW202146759A - Magnetohydrodynamic hydrogen electrical power generator - Google Patents

Magnetohydrodynamic hydrogen electrical power generator Download PDF

Info

Publication number
TW202146759A
TW202146759A TW110105166A TW110105166A TW202146759A TW 202146759 A TW202146759 A TW 202146759A TW 110105166 A TW110105166 A TW 110105166A TW 110105166 A TW110105166 A TW 110105166A TW 202146759 A TW202146759 A TW 202146759A
Authority
TW
Taiwan
Prior art keywords
hydrogen
molten metal
energy
reaction
plasma
Prior art date
Application number
TW110105166A
Other languages
Chinese (zh)
Inventor
雷戴爾 L 米爾斯
Original Assignee
美商明亮光源能源公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2021/017148 external-priority patent/WO2021159117A1/en
Application filed by 美商明亮光源能源公司 filed Critical 美商明亮光源能源公司
Publication of TW202146759A publication Critical patent/TW202146759A/en

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/70Wind energy
    • Y02E10/72Wind turbines with rotation axis in wind direction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E70/00Other energy conversion or management systems reducing GHG emissions
    • Y02E70/30Systems combining energy storage with energy generation of non-fossil origin

Abstract

A power generator is described that provides at least one of electrical and thermal power comprising (i) at least one reaction cell for reactions involving atomic hydrogen hydrogen products identifiable by unique analytical and spectroscopic signatures, (ii) a molten metal injection system comprising at least one pump such as an electromagnetic pump that provides a molten metal stream to the reaction cell and at least one reservoir that receives the molten metal stream, and (iii) an ignition system comprising an electrical power source that provides low-voltage, high-current electrical energy to the at least one steam of molten metal to ignite a plasma to initiate rapid kinetics of the reaction and an energy gain.

Description

磁流體動力氫發電機magnetohydrodynamic hydrogen generator

本發明係關於發電領域,且具體言之,係關於用於發電之系統、裝置及方法。更具體言之,本發明之實施例係針對經由磁流體動力功率轉換器、光-電功率轉換器、電漿-電功率轉換器、光子-電功率轉換器或熱-電功率轉換器產生光功率、電漿及熱功率並產生電力的發電裝置及系統以及相關方法。另外,本發明之實施例描述使用光伏打功率轉換器,使用水或基於水之燃料源之點火來產生光功率、機械功率、電力及/或熱功率之系統、裝置及方法。此等及其他相關實施例詳細描述於本發明中。The present invention relates to the field of power generation and, in particular, to systems, apparatus and methods for power generation. More specifically, embodiments of the present invention are directed to generating optical power, plasmonic power via magnetohydrodynamic power converters, opto-electrical power converters, plasmonic-electrical power converters, photonic-electrical power converters, or thermo-electrical power converters. And thermal power and power generation devices and systems and related methods. Additionally, embodiments of the present invention describe systems, devices and methods for generating optical, mechanical, electrical and/or thermal power using photovoltaic power converters using ignition of water or water-based fuel sources. These and other related embodiments are described in detail herein.

發電可採取許多形式,利用來自電漿之功率。電漿之成功商業化可視能夠有效形成電漿且接著捕獲所產生電漿之功率的發電系統而定。Electricity generation can take many forms, utilizing power from plasma. The successful commercialization of plasma may depend on a power generation system capable of efficiently forming the plasma and then capturing the power of the generated plasma.

電漿可在某些燃料之點火期間形成。此等燃料可包括水或基於水之燃料源。在點火期間,形成剝除電子之原子之電漿雲,且可釋放出高光功率。可由本發明之電轉換器利用電漿之高光功率。離子及激發態原子可再結合且經歷電子弛豫,以發射光功率。光功率可藉由光伏打裝置轉換成電力。Plasma can form during ignition of certain fuels. Such fuels may include water or water-based fuel sources. During ignition, a plasma cloud of atoms stripped of electrons is formed and high optical power can be released. The high optical power of the plasma can be utilized by the electrical converter of the present invention. Ions and excited atoms can recombine and undergo electronic relaxation to emit optical power. Optical power can be converted into electricity by photovoltaic devices.

本發明係針對產生電能及熱能中之至少一者的電力系統,其包含: 至少一個容器,其能夠保持低於大氣壓之一壓力; 反應物,其能夠經歷產生足夠能量以在該容器中形成一電漿之一反應,該等反應物包含: a)   氫氣與氧氣之一混合物,及/或 水蒸汽,及/或 氫氣與水蒸汽之一混合物; b)   一熔融金屬; 一質量流量控制器,其用以控制至少一種反應物至該容器中之流動速率; 一真空泵,其用以在一或多種反應物流入該容器中時將該容器中之該壓力保持為低於大氣壓力; 一熔融金屬噴射器系統,其包含至少一個包含該熔融金屬中之一些的儲集器、經結構設計以傳送該儲集器中之該熔融金屬且經由一噴射器管提供一熔融金屬流之一熔融金屬泵系統(例如,一或多個電磁泵),及至少一個用於接收該熔融金屬流之非噴射器熔融金屬儲集器; 至少一個點火系統,其包含一電力或點火電流源,以向該至少一個熔融金屬流供應電力,以在該氫氣及/或氧氣及/或水蒸汽流入該容器中時點火該反應; 一反應物供應系統,其用以補充該反應中消耗之反應物; 功率轉換器或輸出系統,其用以將反應產生之能量的一部分(例如,自電漿輸出之光及/或熱)轉換成電力及/或熱功率。The present invention is directed to a power system for generating at least one of electrical energy and thermal energy, comprising: at least one container capable of maintaining a pressure below atmospheric pressure; reactants capable of undergoing a reaction that produces sufficient energy to form a plasma in the vessel, the reactants comprising: a) a mixture of hydrogen and oxygen, and/or water vapor, and/or A mixture of hydrogen and water vapor; b) a molten metal; a mass flow controller for controlling the flow rate of at least one reactant into the vessel; a vacuum pump for maintaining the pressure in the vessel below atmospheric pressure as one or more reactants flow into the vessel; A molten metal injector system comprising at least one reservoir containing some of the molten metal, structured to deliver the molten metal in the reservoir, and one of providing a stream of molten metal via an injector tube a molten metal pump system (eg, one or more electromagnetic pumps), and at least one non-ejector molten metal reservoir for receiving the molten metal stream; at least one ignition system comprising a source of electrical power or ignition current to supply electrical power to the at least one molten metal stream to ignite the reaction when the hydrogen and/or oxygen and/or water vapor flows into the vessel; a reactant supply system for replenishing the reactants consumed in the reaction; A power converter or output system for converting a portion of the energy generated by the reaction (eg, light and/or heat output from the plasma) into electrical and/or thermal power.

本發明之電力系統(本文中亦稱為「SunCell」)可包含: a.) 至少一個容器,其能夠保持低於大氣壓之一壓力,其包含一反應腔室; b) 兩個電極,其經結構設計以允許一熔融金屬在其間流動以完成一電路; c) 一電源,其連接至該兩個電極以在該電路關閉時在該兩個電極間施加一電流; d) 一電漿產生單元(例如,輝光放電單元),其用以誘發自一氣體形成一第一電漿;其中該電漿產生單元之流出物經引向該電路(例如,該熔融金屬、陽極、陰極、浸沒於一熔融金屬儲集器中之一電極); 其中在跨越該電路施加電流時,該電漿產生單元之該流出物經歷一反應以產生一第二電漿及反應產物;及 e) 一電源適配器,其經結構設計以將來自該第二電漿之能量轉換及/或傳遞成機械能、熱能及/或電能。在一些實施例中,電漿產生單元中之氣體為氫氣(H2 )與氧氣(O2 )之混合物。例如,氧氣與氫氣之相對莫耳比為0.01%至50% (例如,0.1%至20%、0.1%至15%等)。在某些實施例中,熔融金屬為鎵。在一些實施例中,反應產物具有如本文中所描述之至少一個光譜特徵(例如,實例10中所描述之彼等光譜特徵)。在各種態樣中,第二電漿形成於反應單元中,且該反應單元之壁包含對與熔融金屬形成合金(例如,與諸如鎵之熔融金屬形成合金)具有增大之抗性的襯裡,且襯裡及反應單元之壁對反應產物具有高滲透性(例如,不鏽鋼,諸如347 SS,諸如4130合金SS或Cr-Mo SS、鎳、Ti、鈮、釩、鐵、W、Re、Ta、Mo、鈮及Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%))。襯裡可由結晶材料(例如,SiC、BN、石英)及/或諸如Nb、Ta、Mo或W中之至少一者的耐火金屬製成。在某些實施例中,第二電漿形成於反應單元中,其中反應單元腔室之壁包含第一及第二區段, 該第一區段由不鏽鋼,諸如347 SS,諸如4130合金SS或Cr-Mo SS、鎳、Ti、鈮、釩、鐵、W、Re、Ta、Mo、鈮及Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%)構成; 該第二區段包含與該第一區段中之金屬不同的一耐火金屬; 其中不同金屬之間的接頭藉由一層壓材料(例如,諸如BN之陶瓷)形成。The power system of the present invention (also referred to herein as "SunCell") may comprise: a.) at least one vessel capable of maintaining a pressure below atmospheric pressure, which contains a reaction chamber; b) two electrodes, which are a structure designed to allow a molten metal to flow therebetween to complete an electrical circuit; c) a power source connected to the two electrodes to apply a current between the two electrodes when the circuit is closed; d) a plasma generating unit (eg, glow discharge cells) for inducing the formation of a first plasma from a gas; wherein the effluent of the plasma generating cell is directed to the circuit (eg, the molten metal, anode, cathode, immersed in a an electrode in the molten metal reservoir); wherein upon application of current across the circuit, the effluent of the plasma generating unit undergoes a reaction to produce a second plasma and reaction product; and e) a power adapter, It is structured to convert and/or transfer the energy from the second plasma into mechanical energy, thermal energy and/or electrical energy. In some embodiments, the plasma generating unit is a gas mixture of hydrogen (H 2) and oxygen (O 2) of the. For example, the relative molar ratio of oxygen to hydrogen is 0.01% to 50% (eg, 0.1% to 20%, 0.1% to 15%, etc.). In certain embodiments, the molten metal is gallium. In some embodiments, the reaction product has at least one spectral feature as described herein (eg, those spectral features described in Example 10). In various aspects, the second plasma is formed in the reaction cell, and the walls of the reaction cell include a liner having increased resistance to alloying with molten metal (eg, alloying with molten metal such as gallium), And the lining and the walls of the reaction unit are highly permeable to the reaction product (eg, stainless steel, such as 347 SS, such as 4130 alloy SS or Cr-Mo SS, nickel, Ti, niobium, vanadium, iron, W, Re, Ta, Mo , niobium and Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%)). The liner may be made of crystalline materials (eg, SiC, BN, quartz) and/or refractory metals such as at least one of Nb, Ta, Mo, or W. In certain embodiments, the second plasma is formed in the reaction cell, wherein the walls of the reaction cell chamber comprise first and second sections, the first section being made of stainless steel, such as 347 SS, such as 4130 alloy SS or Cr-Mo SS, nickel, Ti, niobium, vanadium, iron, W, Re, Ta, Mo, niobium and Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%); the second The section contains a refractory metal different from the metal in the first section; wherein the joint between the different metals is formed by a laminate (eg, a ceramic such as BN).

本發明之一種電力系統可包括: a.) 一容器,其能夠保持低於大氣壓之一壓力,該容器包含一反應腔室; b) 複數個電極對,每一對包含經結構設計以允許一熔融金屬在其間流動以完成一電路的電極; c) 一電源,其連接至該兩個電極以在該電路關閉時在該兩個電極間施加一電流; d) 一電漿產生單元(例如,輝光放電單元),其用以誘發自一氣體形成一第一電漿;其中該電漿產生單元之流出物經引向該電路(例如,該熔融金屬、陽極、陰極、浸沒於一熔融金屬儲集器中之一電極); 其中在跨越該電路施加電流時,該電漿產生單元之該流出物經歷一反應以產生一第二電漿及反應產物;及 e) 一電源適配器,其經結構設計以將來自該第二電漿之能量轉換及/或傳遞成機械能、熱能及/或電能; 其中該等反應產物(例如,中間物、最終產物)中之至少一者具有如本文中所描述之至少一個光譜特徵(例如,如實例10中所示)。A power system of the present invention may include: a.) a vessel capable of maintaining a pressure below atmospheric pressure, the vessel comprising a reaction chamber; b) a plurality of electrode pairs, each pair comprising electrodes structured to allow a molten metal to flow therebetween to complete an electrical circuit; c) a power source connected to the two electrodes to apply a current between the two electrodes when the circuit is closed; d) a plasma generating unit (eg, glow discharge unit) for inducing the formation of a first plasma from a gas; wherein the effluent of the plasma generating unit is directed to the circuit (eg, the molten metal, anode, cathode, one electrode immersed in a molten metal reservoir); wherein upon application of current across the circuit, the effluent of the plasma generating unit undergoes a reaction to generate a second plasma and reaction product; and e) a power adapter structured to convert and/or transfer the energy from the second plasma into mechanical, thermal and/or electrical energy; wherein at least one of the reaction products (eg, intermediates, final products) has at least one spectral feature as described herein (eg, as shown in Example 10).

電力系統可包含用於混合氫氣與氧氣及/或水分子之氣體混合器,及氫氧再結合器及/或氫解離劑。在一些實施例中,氫氧再結合器包含電漿單元。電漿單元可包含中心正電極及接地管體相對電極,其中跨越電極施加電壓(例如,在50 V至1000 V範圍內之電壓),以誘發自氫氣(H2 )及氧氣(O2 )氣體混合物形成電漿。在一些實施例中,氫氧再結合器包含由惰性載體材料負載之再結合器催化性金屬。在某些實施中,供應至電漿產生單元以產生第一電漿之氣體混合物包含非化學計量H2 /O2 混合物(例如,以混合物之莫耳百分比計,具有小於1/3莫耳%的O2 或0.01%至30%或0.1%至20%,或小於10%,或小於5%,或小於3%之O2 的H2 /O2 混合物),其流過電漿單元(例如,輝光放電單元)以產生能夠以足夠的放熱進行反應以產生第二電漿的反應混合物。非化學計量H2 /O2 混合物可通過輝光放電以產生原子氫及初生H2 O之流出物(例如,具有一定濃度之水且具有足以防止氫鍵形成之內能的混合物); 輝光放電流出物經引導至反應腔室中,其中點火電流供應在兩個電極之間(例如,其中熔融金屬穿過其間),且在流出物與偏壓熔融金屬(例如,鎵)相互作用時,初生水與原子氫之間的反應例如在電弧電流形成時經誘發。The power system may include a gas mixer for mixing hydrogen with oxygen and/or water molecules, and a hydrogen-oxygen recombiner and/or a hydrogen dissociator. In some embodiments, the oxyhydrogen recombiner includes a plasma cell. The plasma cell may include a central positive electrode and a grounded tube opposite electrode, with a voltage (eg, a voltage in the range of 50 V to 1000 V) applied across the electrodes to induce from hydrogen (H 2 ) and oxygen (O 2 ) gases The mixture forms a plasma. In some embodiments, the oxyhydrogen recombiner comprises a recombiner catalytic metal supported by an inert support material. In certain implementations, the gas mixture supplied to the plasma generation unit to generate the first plasma comprises a non-stoichiometric H 2 /O 2 mixture (eg, having less than 1/3 mol % on a molar % basis of the mixture the O 2 or from 0.01 to 30% or 0.1% to 20%, 10% or less, or less than 5%, or less than 3% of O H 2 2 / O 2 mixture) which flows through the plasma unit (e.g. , glow discharge cells) to produce a reaction mixture capable of reacting with sufficient exotherm to produce a second plasma. Non-stoichiometric H 2 / O 2 mixtures can be obtained by glow discharge atomic hydrogen to produce H 2 O and the primary effluent (e.g., water having a concentration of the mixture in the range sufficient to prevent the formation of hydrogen bond energy); glow discharge effluent The effluent is directed into a reaction chamber where an ignition current is supplied between the two electrodes (eg, with molten metal passing therethrough), and when the effluent interacts with a biased molten metal (eg, gallium), nascent water The reaction with atomic hydrogen is induced, for example, when the arc current is formed.

電力系統可包含反應腔室(例如,其中初生水及原子氫經歷電漿形成反應)及/或儲集器中之至少一者,其包含對與熔融金屬形成合金具有抗性之至少一種耐火材料襯裡。反應腔室之內壁可包含陶瓷塗層、襯有W、Nb或Mo襯裡之碳襯裡、襯有W板。在一些實施例中,儲集器包含碳襯裡且碳由其中所含之熔融金屬覆蓋。在各種實施中,反應腔室壁包含對反應產物氣體高度可滲透之材料。在各種實施例中,反應腔室壁包含不鏽鋼(例如,Mo-Cr不鏽鋼)、鈮、鉬或鎢中之至少一者。The power system may include at least one of a reaction chamber (eg, in which nascent water and atomic hydrogen undergo a plasma formation reaction) and/or a reservoir that includes at least one refractory material that is resistant to alloying with molten metal lining. The inner walls of the reaction chamber may comprise ceramic coatings, carbon linings lined with W, Nb or Mo, lined with W plates. In some embodiments, the reservoir includes a carbon liner and the carbon is covered by molten metal contained therein. In various implementations, the reaction chamber walls comprise materials that are highly permeable to reaction product gases. In various embodiments, the reaction chamber walls comprise at least one of stainless steel (eg, Mo-Cr stainless steel), niobium, molybdenum, or tungsten.

電力系統可包含冷凝器以冷凝熔融金屬蒸汽以及金屬氧化物粒子及蒸汽並將其傳回至反應單元腔室。在一些實施例中,電力系統可進一步包含真空管線,其中冷凝器包含真空管線的自反應單元腔室至相對於反應單元腔室豎直之真空泵之區段且包含惰性高表面積填充物材料,該填充物材料冷凝熔融金屬蒸汽以及金屬氧化物粒子及蒸汽且並將其傳回至反應單元腔室,同時允許真空泵在反應單元腔室中保持真空壓力。The power system may include a condenser to condense and return the molten metal vapor and metal oxide particles and vapor to the reaction unit chamber. In some embodiments, the power system may further include a vacuum line, wherein the condenser includes a section of the vacuum line from the reaction unit chamber to the vacuum pump vertical relative to the reaction unit chamber and includes an inert high surface area filler material, the The filler material condenses the molten metal vapor as well as the metal oxide particles and vapor and transfers it back to the reaction unit chamber while allowing the vacuum pump to maintain vacuum pressure in the reaction unit chamber.

電力系統可包含黑體輻射器及用以輸出來自黑體輻射器之光的窗。此類實施例可用以產生光(例如,用於照明)。The power system may include a blackbody radiator and a window to output light from the blackbody radiator. Such embodiments may be used to generate light (eg, for illumination).

在一些實施例中,電力系統可進一步包含用於混合氫氣與氧氣之氣體混合器,及氫氧再結合器及/或氫解離劑。例如,電力系統可包含氫氧再結合器,其中氫氧再結合器包含由惰性載體材料負載之再結合器催化性金屬。In some embodiments, the power system may further include a gas mixer for mixing hydrogen and oxygen, and a hydrogen-oxygen recombiner and/or a hydrogen dissociator. For example, a power system may include a hydrogen-oxygen recombiner, wherein the hydrogen-oxygen recombiner comprises a recombiner catalytic metal supported by an inert support material.

電力系統可藉由使反應最大化之參數來操作,且具體言之,能夠輸出充分能量以維持電漿產生及淨能量輸出之反應。例如,在一些實施例中,在操作期間容器的壓力在0.1托至50托的範圍內。在某些實施中,氫氣質量流率比氧氣質量流率大1.5至1000範圍內之倍數。在一些實施例中,壓力可超過50托且可進一步包含氣體再循環系統。The power system can be operated with parameters that maximize the reaction, and in particular, can output sufficient energy to sustain the reaction of plasma production and net energy output. For example, in some embodiments, the pressure of the vessel during operation is in the range of 0.1 Torr to 50 Torr. In certain implementations, the hydrogen mass flow rate is greater than the oxygen mass flow rate by a multiple in the range of 1.5 to 1000. In some embodiments, the pressure may exceed 50 Torr and may further include a gas recirculation system.

在一些實施例中,將惰性氣體(例如,氬氣)噴射至容器中。惰性氣體可用於延長某些原位形成之反應物(諸如初生水)之壽命。In some embodiments, an inert gas (eg, argon) is sparged into the container. Inert gases can be used to extend the life of certain in situ formed reactants, such as nascent water.

電力系統可包含微型噴水器,其經結構設計以將水噴射至容器中,使得由自反應輸出之能量產生的電漿包含水蒸汽。在一些實施例中,微型噴射器將水噴射至容器中。在一些實施例中,H2 莫耳百分比在水蒸汽(例如,藉由微型噴射器噴射之水蒸汽)之莫耳百分比的1.5至1000倍之範圍內。The power system may include micro-water sprayers structured to spray water into the vessel such that the plasma generated from the energy output from the reaction contains water vapor. In some embodiments, the micro-injector sprays water into the container. In some embodiments, H 2 mole percentage of water vapor (e.g., by micro-injecting the steam injector of) the range of 1.5 to 1000-fold of the mole percentage.

電力系統可進一步包含加熱器以熔融金屬(例如,鎵或銀或銅或其組合)來形成熔融金屬。電力系統可進一步包含經結構設計以在反應之後回收熔融金屬之熔融金屬回收系統,該系統包含自非噴射器熔融金屬儲集器收集溢流之熔融金屬溢流通道。The power system may further include a heater to form the molten metal with molten metal (eg, gallium or silver or copper or a combination thereof). The power system may further include a molten metal recovery system structured to recover molten metal after the reaction, the system including a molten metal overflow channel collecting overflow from the non-ejector molten metal reservoir.

熔融金屬噴射系統可進一步包含熔融金屬儲集器及非噴射熔融金屬儲集器中之電極;且點火系統包含用以將相對電壓供應至噴射器及非噴射器儲集器電極的電力或點火電流源;其中電力源經由熔融金屬流供應電流及功率流以引起反應物之反應從而在容器內部形成電漿。The molten metal injection system may further include electrodes in the molten metal reservoir and the non-injected molten metal reservoir; and the ignition system includes electrical power or ignition current to supply relative voltages to the injector and non-injector reservoir electrodes source; wherein the electrical power source supplies current and power flow through the flow of molten metal to cause a reaction of the reactants to form a plasma inside the vessel.

電力源通常傳送足以引起反應物反應以形成電漿之高電流電能。在某些實施例中,電力源包含至少一個超級電容器。在各種實施中,來自熔融金屬點火系統功率之電流在10 A至50,000 A之範圍內。The power source typically delivers high current electrical energy sufficient to cause the reactants to react to form a plasma. In certain embodiments, the power source includes at least one ultracapacitor. In various implementations, the current from the molten metal ignition system power is in the range of 10 A to 50,000 A.

通常,熔融金屬泵系統經結構設計以將熔融金屬自熔融金屬儲集器泵抽至非噴射儲集器,其中熔融金屬流產生於其間。在一些實施例中,熔融金屬泵系統為一或多個電磁泵且每一電磁泵包含以下中之一者: a)   一DC或AC導電型,其包含經由電極供應至該熔融金屬之一DC或AC電流源及一恆定或同相交變向量交叉磁場源,或 b)  一感應型,其包含穿過熔融金屬之一短路迴路之一交變磁場源,其在該金屬中誘發一交流電;及一同相交變向量交叉磁場源。Typically, molten metal pump systems are structured to pump molten metal from a molten metal reservoir to a non-sparge reservoir, where a flow of molten metal is produced therebetween. In some embodiments, the molten metal pump system is one or more electromagnetic pumps and each electromagnetic pump includes one of the following: a) a DC or AC conductivity type comprising a source of DC or AC current supplied to the molten metal through electrodes and a source of constant or in-phase alternating vector crossed magnetic fields, or b) An inductive type comprising a source of alternating magnetic field through a short circuit loop of molten metal, which induces an alternating current in the metal; and a source of co-phase alternating vector crossed magnetic field.

在一些實施例中,熔融金屬點火系統之電路藉由熔融金屬流封閉以使得點火進一步引起點火(例如,其中點火頻率小於10,000 Hz)。噴射器儲集器可包含與其中之熔融金屬接觸的電極,且非噴射器儲集器包含與藉由噴射器系統提供之熔融金屬接觸的電極。In some embodiments, the circuits of the molten metal ignition system are closed by the flow of molten metal such that the ignition further causes ignition (eg, where the ignition frequency is less than 10,000 Hz). The injector reservoir may contain electrodes in contact with the molten metal therein, and the non-injector reservoirs may contain electrodes in contact with the molten metal provided by the injector system.

在各種實施中,非噴射器儲集器對準於噴射器上方(例如,與噴射器豎直對準),且噴射器經結構設計以產生朝向非噴射器儲集器定向之熔融流,使得來自熔融金屬流之熔融金屬可收集在儲集器中且熔融金屬流與非噴射器儲集器電極電接觸;且其中熔融金屬彙集在非噴射器儲集器電極上。在某些實施例中,至非噴射器儲集器之點火電流可包含: a)  氣密密封之高溫饋通件,其能夠穿透該容器; b)  電極匯流條,及 c)  電極。In various implementations, the non-ejector reservoir is aligned above the eductor (eg, vertically aligned with the eductor), and the eductor is structured to produce melt flow directed toward the non-ejector reservoir such that Molten metal from the molten metal stream can be collected in the reservoir and the molten metal stream is in electrical contact with the non-injector reservoir electrode; and wherein the molten metal collects on the non-injector reservoir electrode. In certain embodiments, the firing current to the non-injector reservoir may include: a) Hermetically sealed high temperature feedthroughs capable of penetrating the vessel; b) electrode bus bars, and c) Electrodes.

點火電流密度可至少由於容器幾何形狀與最終電漿形狀相關而與容器幾何形狀相關。在各種實施中,容器可包含沙漏幾何形狀(例如,其中容器之內部表面區域的中間部分的橫截面小於在沿著主軸的每一遠端之20%或10%或5%內的橫截面的幾何形狀),且在橫截面中以豎直定向(例如,大約平行於重力的主軸)定向,其中噴射器儲集器在腰部下方且經結構設計,使得儲集器中之熔融金屬的位準大約接近沙漏之腰部以增大點火電流密度。在一些實施例中,容器關於縱向主軸對稱。在一些實施例中,容器可為沙漏幾何形狀且包含耐火金屬襯裡。在一些實施例中,具有沙漏幾何形狀之容器之噴射器儲集器可包含用於點火電流之正電極。The ignition current density may be related to the vessel geometry at least as the vessel geometry is related to the final plasma shape. In various implementations, the container may comprise an hourglass geometry (eg, wherein the cross-section of the middle portion of the interior surface area of the container is less than within 20% or 10% or 5% of the cross-section of each distal end along the major axis) geometry) and in a vertical orientation (eg, approximately parallel to the major axis of gravity) in cross-section, with the injector reservoir below the waist and structured such that the level of molten metal in the reservoir is Approx. the waist of the hourglass to increase the ignition current density. In some embodiments, the container is symmetrical about the longitudinal major axis. In some embodiments, the container may be an hourglass geometry and include a refractory metal lining. In some embodiments, the injector reservoir of the vessel having an hourglass geometry may contain a positive electrode for ignition current.

熔融金屬可包含銀、鎵、銀銅合金、銅或其組合中之至少一者。在一些實施例中,熔融金屬之熔點低於700℃。例如,熔融金屬可包含以下各者中之至少一者:鉍、鉛、錫、銦、鎘、鎵、銻、或合金,諸如洛斯金屬、Cerrosafe、伍氏金屬、菲爾德金屬、Cerrolow 136、Cerrolow 117、Bi-Pb-Sn-Cd-In-Tl及鎵合金。在某些態樣中,接觸彼熔融金屬之發電系統之組件中之至少一者(例如,儲集器、電極)包含、包覆有或塗佈有對與熔融金屬形成合金具有抗性一或多種抗合金材料。例示性抗合金材料為W、Ta、Mo、Nb、Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%)、Os、Ru、Hf、Re、347 SS、Cr-Mo SS、經矽化物塗佈物、碳及陶瓷,諸如BN、石英、Si3N4、Shapal、AlN、Sialon、Al2 O3 、ZrO2 或HfO2 。在一些實施例中,容器之至少一部分由陶瓷及/或金屬構成。陶瓷可包含以下中之至少一者:金屬氧化物、石英、氧化鋁、氧化鋯、氧化鎂、氧化鉿、碳化矽、碳化鋯、二硼化鋯、氮化矽及玻璃陶瓷。在一些實施例中,容器之金屬包含不鏽鋼及耐火金屬中之至少一者。The molten metal may include at least one of silver, gallium, silver-copper alloys, copper, or combinations thereof. In some embodiments, the melting point of the molten metal is below 700°C. For example, the molten metal may comprise at least one of bismuth, lead, tin, indium, cadmium, gallium, antimony, or alloys such as Ross Metal, Cerrosafe, Wood, Field Metal, Cerrolow 136, Cerrolow 117 , Bi-Pb-Sn-Cd-In-Tl and gallium alloys. In certain aspects, at least one of the components of the power generation system (eg, reservoir, electrode) that contacts the molten metal comprises, is coated with, or is coated with resistance to alloying with the molten metal—or Various anti-alloy materials. Exemplary anti-alloying materials are W, Ta, Mo, Nb, Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%), Os, Ru, Hf, Re, 347 SS, Cr-Mo SS , the silicide coating, carbon and ceramics such as BN, quartz, Si3N4, Shapal, AlN, Sialon , Al 2 O 3, ZrO 2 or HfO 2. In some embodiments, at least a portion of the container is constructed of ceramic and/or metal. The ceramic may comprise at least one of metal oxides, quartz, alumina, zirconia, magnesia, hafnium oxide, silicon carbide, zirconium carbide, zirconium diboride, silicon nitride, and glass ceramics. In some embodiments, the metal of the container includes at least one of stainless steel and refractory metal.

熔融金屬可與水反應以原位形成原子氫。在各種實施中,熔融金屬為鎵,且電力系統進一步包含用以自氧化鎵(例如,在反應中產生之氧化鎵)再生鎵的鎵再生系統。鎵再生系統可包含氫氣及原子氫中之至少一者之源以將氧化鎵還原成鎵金屬。在一些實施例中,將氫氣自發電系統外部之源傳送至鎵再生系統。在一些實施例中,原位產生氫氣及/或原子氫。鎵再生系統可包含點火系統,其將電力傳送至反應中所產生之鎵(或鎵/氧化鎵組合)。在若干實施中,此電力可使鎵表面上之氧化鎵電解至鎵金屬。在一些實施例中,鎵再生系統可包含電解質(例如,包含鹼或鹼土鹵化物之電解質)。在一些實施例中,鎵再生系統可包含鹼性pH水性電解系統、將氧化鎵輸送至系統中之構件,及用以將鎵傳回至容器(例如,至熔融金屬儲集器)的構件。在一些實施例中,鎵再生系統包含溢流口及鬥式升降機以自鎵表面移除氧化鎵。在各種實施中,電力系統可包含至真空泵之排氣管線以保持廢氣流,且進一步包含排氣管線中之靜電沈降系統以收集廢氣流中之氧化鎵粒子。Molten metal can react with water to form atomic hydrogen in situ. In various implementations, the molten metal is gallium, and the power system further includes a gallium regeneration system to regenerate gallium from gallium oxide (eg, gallium oxide produced in the reaction). The gallium regeneration system can include a source of at least one of hydrogen and atomic hydrogen to reduce gallium oxide to gallium metal. In some embodiments, the hydrogen gas is delivered to the gallium regeneration system from a source external to the power generation system. In some embodiments, hydrogen and/or atomic hydrogen is generated in situ. The gallium regeneration system may include an ignition system that delivers power to the gallium (or gallium/gallium oxide combination) produced in the reaction. In some implementations, this power can electrolyze gallium oxide on the gallium surface to gallium metal. In some embodiments, the gallium regeneration system may include an electrolyte (eg, an electrolyte including an alkali or alkaline earth halide). In some embodiments, a gallium regeneration system may include an alkaline pH aqueous electrolysis system, means for delivering gallium oxide into the system, and means for returning gallium to a vessel (eg, to a molten metal reservoir). In some embodiments, the gallium regeneration system includes an overflow and a bucket elevator to remove gallium oxide from the gallium surface. In various implementations, the power system can include an exhaust line to the vacuum pump to maintain the exhaust flow, and further include an electrostatic precipitation system in the exhaust line to collect gallium oxide particles in the exhaust flow.

在一些實施例中,發電系統產生待經由電漿產生單元引向熔融金屬單元之水/氫氣混合物。在此等實施例中,電漿產生單元(諸如,輝光放電單元)誘發自氣體(例如,包含氧氣及氫氣之混合物的氣體)形成第一電漿;其中電漿產生單元之流出物經引向熔融金屬電路之任何部分(例如,熔融金屬、陽極、陰極、浸沒於熔融金屬儲集器中之電極)。在偏壓熔融金屬與此流出物相互作用時,可形成第二電漿(比由電漿產生單元產生之電漿更高能)。在此等實施例中,電漿產生單元可饋入具有莫耳過量之氫氣的氫氣(H2 )及氧氣混合物(O2 ),使得流出物包含原子氫(H)及水(H2 O)。流出物中之水可呈初生水形式,水經充分給予能量且處於一定濃度,使得其並不氫鍵結至流出物中之其他組分。此流出物可在涉及H及HOH之第二較高能反應中進行,該反應形成在與熔融金屬及經由熔融金屬及電漿中之至少一者供應之外部電流相互作用時加強的電漿,從而可產生額外原子氫(來自流出物中之H2 )以進一步傳播第二高能反應。In some embodiments, the power generation system produces a water/hydrogen mixture to be directed to the molten metal unit via the plasma generation unit. In these embodiments, a plasma generating unit, such as a glow discharge unit, induces the formation of a first plasma from a gas (eg, a gas comprising a mixture of oxygen and hydrogen); wherein the effluent of the plasma generating unit is directed to Any part of a molten metal circuit (eg, molten metal, anodes, cathodes, electrodes immersed in a molten metal reservoir). When the biased molten metal interacts with this effluent, a second plasma (higher energy than that produced by the plasma generating unit) can be formed. In such embodiments, the plasma generating unit may be fed with hydrogen (H 2) and oxygen gas mixture (O 2) having a molar excess of hydrogen such that the effluent contains hydrogen atoms (H) and water (H 2 O) . The water in the effluent may be in the form of nascent water that is sufficiently energized and in a concentration such that it does not hydrogen bond to other components in the effluent. This effluent may proceed in a second higher energy reaction involving H and HOH that forms a plasma that intensifies upon interaction with the molten metal and an external current supplied through at least one of the molten metal and the plasma, thereby may produce additional hydrogen atom (derived from the effluent H 2) further to a second high energy propagation reaction.

在一些實施例中,電力系統可進一步包含至少一個熱交換器(例如,耦接至容器壁之壁的熱交換器、可將熱量傳遞至熔融金屬或傳遞至熔融金屬儲集器或自熔融金屬或自熔融金屬儲集器傳遞熱量的熱交換器)。在一些實施例中,熱交換器包含(i)板式、(ii)殼內塊式、(iii)SiC環形凹槽式、(iv)SiC組合式及(v)殼管式熱交換器中之一者。在某些實施例中,殼管式熱交換器包含:導管、歧管、分配器、熱交換器入口管線、熱交換器出口管線、外殼、外部冷卻劑入口、外部冷卻劑出口、擋板、用以使來自儲集器之熱熔融金屬再循環通過熱交換器且將冷熔融金屬傳回至儲集器的至少一個泵,及一或多個水泵及水冷卻劑或一或多個空氣鼓風機及空氣冷卻劑,其用以使冷的冷卻劑流過外部冷卻劑入口及外殼,其中冷卻劑藉由來自導管之熱傳遞而經加熱且離開外部冷卻劑出口。在一些實施例中,殼管式熱交換器包含導管、歧管、分配器、熱交換器入口管線及熱交換器出口管線,該出口管線包含襯裡的碳且獨立於導管、歧管、分配器、熱交換器入口管線、熱交換器出口管線、外殼、外部冷卻劑入口、外部冷卻劑出口及包含不鏽鋼之擋板擴展。熱交換器之外部冷卻劑包含空氣,且來自微型渦輪壓縮機或微型渦輪復熱器之空氣迫使冷空氣通過外部冷卻劑入口及外殼,其中冷卻劑藉由來自導管之熱傳遞而經加熱且離開外部冷卻劑出口,且自外部冷卻劑出口輸出之熱冷卻劑流入微型渦輪機中以將熱功率轉換成電力。In some embodiments, the power system may further comprise at least one heat exchanger (eg, a heat exchanger coupled to the walls of the vessel walls, which may transfer heat to the molten metal or to a molten metal reservoir or from the molten metal or heat exchangers that transfer heat from a molten metal reservoir). In some embodiments, the heat exchanger comprises one of (i) plate, (ii) block-in-shell, (iii) SiC annular groove, (iv) SiC combination, and (v) shell-and-tube heat exchangers one. In certain embodiments, the shell and tube heat exchanger comprises: conduits, manifolds, distributors, heat exchanger inlet lines, heat exchanger outlet lines, shells, external coolant inlets, external coolant outlets, baffles, at least one pump to recirculate hot molten metal from the reservoir through the heat exchanger and return cold molten metal to the reservoir, and one or more water pumps and water coolant or one or more air blowers and air coolant, which is used to flow cold coolant through the external coolant inlet and housing, where the coolant is heated by heat transfer from the conduit and exits the external coolant outlet. In some embodiments, the shell and tube heat exchanger comprises a conduit, a manifold, a distributor, a heat exchanger inlet line, and a heat exchanger outlet line, the outlet line comprising lined carbon and independent of the conduit, manifold, and distributor , heat exchanger inlet line, heat exchanger outlet line, housing, external coolant inlet, external coolant outlet and baffle extensions comprising stainless steel. The external coolant of the heat exchanger contains air, and the air from the micro-turbo compressor or micro-turbo regenerator forces cool air through the external coolant inlet and housing, where the coolant is heated by heat transfer from the conduits and exits An external coolant outlet, and the hot coolant output from the external coolant outlet flows into the micro-turbine to convert the thermal power into electricity.

在一些實施例中,電力系統包含反應功率輸出之至少一個功率轉換器或輸出系統,其包含以下各者之群組中之至少一者:熱光伏打轉換器、光伏打轉換器、光電轉換器、磁流體動力轉換器、電漿動力轉換器、熱離子轉換器、熱電轉換器、斯特林引擎、超臨界CO2 循環轉換器、布累登循環轉換器、外部燃燒器型布累登循環引擎或轉換器、朗肯循環引擎或轉換器、有機朗肯循環轉換器、內部燃燒型引擎以及熱機、加熱器及鍋爐。容器可包含將光自容器內部透射至光伏打轉換器之透光光伏打(PV)窗,以及容器幾何形狀及包含自旋窗之至少一個擋扳中之至少一者。自旋窗包含還原氧化鎵之系統,該系統包含氫還原系統及電解系統中之至少一者。在一些實施例中,自旋窗包含或由石英、藍寶石、氟化鎂或其組合構成。在若干實施中,自旋窗塗佈有抑制鎵及氧化鎵中之至少一者之黏著性的塗層。自旋窗塗層可包含類金剛石碳、碳、氮化硼及鹼金屬氫氧化物中之至少一者。在一些實施例中,正點火電極(例如,頂部點火電極,在另一電極上方移位之電極)較接近窗(例如,相比於負點火電極),且正電極經由光伏打向光伏打轉換器發射黑體輻射。In some embodiments, the power system includes at least one power converter or output system responsive to power output that includes at least one of the group of: a thermal photovoltaic converter, a photovoltaic converter, a photoelectric converter , magnetohydrodynamic converters, plasma power converters, thermionic converters, thermoelectric converters, Stirling engines, supercritical CO 2 cycle converters, Breedon cycle converters, external burner Breedon cycle Engines or converters, Rankine cycle engines or converters, organic Rankine cycle converters, internal combustion engines and heat engines, heaters and boilers. The container can include a light-transmitting photovoltaic (PV) window that transmits light from the interior of the container to the photovoltaic converter, and at least one of a container geometry and at least one baffle that includes a spin window. The spin window includes a system for reducing gallium oxide, the system including at least one of a hydrogen reduction system and an electrolysis system. In some embodiments, the spin window comprises or consists of quartz, sapphire, magnesium fluoride, or a combination thereof. In some implementations, the spin window is coated with a coating that inhibits the adhesion of at least one of gallium and gallium oxide. The spin window coating can include at least one of diamond-like carbon, carbon, boron nitride, and alkali metal hydroxide. In some embodiments, the positive firing electrode (eg, the top firing electrode, the electrode displaced above the other electrode) is closer to the window (eg, compared to the negative firing electrode), and the positive electrode is converted via photovoltaic to photovoltaic The device emits black body radiation.

功率轉換器或輸出系統可包含:包含連接至容器之噴嘴的磁流體動力(MHD)轉換器、磁流體動力通道、電極、磁體、金屬收集系統、金屬再循環系統、熱交換器及視情況選用之氣體再循環系統。在一些實施例中,熔融金屬可包含銀。在具有磁流體動力轉換器之實施例中,磁流體動力轉換器可傳送氧氣以在與熔融金屬流中之銀相互作用後形成銀粒子奈米粒子(例如,在分子體系中具有諸如小於約10 nm或小於約1 nm之大小),其中銀奈米粒子經由磁流體動力噴嘴加速以賦予由反應產生之功率的動能庫存。反應物供應系統可供應氧氣且控制氧氣至轉換器之傳送。在各種實施中,銀奈米粒子之動能庫存之至少一部分在磁流體動力通道中轉換成電能。電能之此版本可引起奈米粒子之聚結。奈米粒子可聚結為熔融金屬,其至少部分吸收磁流體動力轉換器之冷凝區段(在本文中亦被稱作MHD冷凝區段)中的氧,且包含所吸收氧之熔融金屬藉由金屬再循環系統返回至噴射器儲集器。在一些實施例中,氧可藉由容器中之電漿自金屬釋放。在一些實施例中,電漿保持在磁流體動力通道及金屬收集系統中以增強熔融金屬對氧之吸收。The power converter or output system may include: a magnetohydrodynamic (MHD) converter including a nozzle connected to the vessel, magnetohydrodynamic channels, electrodes, magnets, metal collection systems, metal recirculation systems, heat exchangers, and optional gas recirculation system. In some embodiments, the molten metal may contain silver. In an embodiment with a magnetohydrodynamic converter, the magnetohydrodynamic converter can deliver oxygen to form silver particles nanoparticles (eg, with a molecular weight such as less than about 10 in a molecular system) upon interaction with silver in the molten metal stream nm or less than about 1 nm in size) in which the silver nanoparticles are accelerated through a magnetohydrodynamic nozzle to impart a kinetic energy inventory of the power generated by the reaction. The reactant supply system can supply oxygen and control the delivery of oxygen to the converter. In various implementations, at least a portion of the kinetic energy inventory of silver nanoparticles is converted into electrical energy in a magnetohydrodynamic channel. This version of electrical energy can cause agglomeration of nanoparticles. Nanoparticles can coalesce into molten metal that at least partially absorbs oxygen in the condensation section (also referred to herein as the MHD condensation section) of the magnetohydrodynamic converter, and the molten metal comprising the absorbed oxygen is The metal recirculation system returns to the ejector reservoir. In some embodiments, oxygen may be released from the metal by the plasma in the container. In some embodiments, the plasma is held in the magnetohydrodynamic channel and metal collection system to enhance the absorption of oxygen by the molten metal.

熔融金屬泵系統可包含第一級電磁泵及第二級電磁泵,其中第一級包含用於金屬再循環系統之泵,且第二級包含金屬噴射器系統之泵。The molten metal pump system may include a first stage electromagnetic pump and a second stage electromagnetic pump, where the first stage includes the pump for the metal recirculation system and the second stage includes the pump for the metal injector system.

反應物誘發之反應產生足夠能量,以便引發容器中電漿之形成。反應可產生表徵為以下各者中的一或多者之氫產物: a) 一分子氫產物H2 (例如,H2 (1/p) (p為大於1且小於或等於137之一整數),其包含未配對電子),其產生一電子順磁共振(EPR)光譜分析信號; b) 具有EPR光譜之分子氫產物H2 (例如,H2 (1/4)),該EPR光譜包含具有2.0046386之g因數的主峰值,該主峰值視情況分裂成一系列成對峰值,其成員藉由自旋軌道耦合能量分離,該等自旋軌道耦合能量為對應電子自旋軌道耦合量子數之一函數,其中 (i) 該未配對電子磁矩基於H2 (1/4)之反磁磁化率在H2 (1/4)分子軌道之配對電子中誘發一反磁矩; (ii) 固有配對-未配對電流相互作用之對應磁矩及由於圍繞核間軸之相對旋轉運動的磁矩引起該等自旋軌道耦合能量; (iii) 將每一自旋軌道分裂峰值進一步細分成匹配整數磁通軌跡能量之一系列等間隔之峰值,該等峰值為對應於躍遷中涉及之角動量分量之數目的電子磁通軌跡量子數之一函數,且 (iv) 另外,由於藉由該分子軌道累積的磁鏈增大的磁能,該自旋軌道分裂隨著該系列成對峰值的低場側上之自旋軌道耦合量子數而增大。 c) 對於9.820295 GHz之一EPR頻率, (i) 由於由該磁能及H2 (1/4)之該自旋軌道耦合能量引起之組合位移的低場峰值位置

Figure 02_image001
Figure 02_image003
; (ii) 具有經量化自旋軌道分裂能量
Figure 02_image005
及電子自旋軌道耦合量子數
Figure 02_image007
之高場峰值位置
Figure 02_image009
Figure 02_image011
,及/或 (iii) 對於電子磁通軌跡量子數
Figure 02_image013
,在每一自旋軌道峰值位置處之整數系列個峰值的間隔
Figure 02_image015
Figure 02_image017
Figure 02_image019
; d) 一氫陰離子H- (例如,H- (1/p)),其包含一共同原子軌道中之一配對及未配對電子,該電子藉由400至410 nm範圍內之高解析度可見光光譜分析以H- (1/2)上觀測到的h/2e之量化單位展現磁鏈; e) 磁鏈,其以在H2 (1/4)之旋轉能階藉由在拉曼光譜分析期間之雷射輻射且藉由來自電子束之高能量電子與H2 (1/4)之碰撞而激發時所觀測到的h/2e之量化單位為單位; f) 分子低能量氫(例如,H2 (1/p)),其具有該未配對電子之自旋磁矩與由於分子旋轉之軌道磁矩之間的該自旋軌道耦合之拉曼光譜躍遷,其中 (i) 旋轉躍遷之能量藉由此等自旋軌道耦合能量隨該等對應電子自旋軌道耦合量子數變化而位移; (ii) 藉由自旋軌道能量位移之分子旋轉峰值藉由磁通鏈能量進一步位移,其中每一能量對應於其電子磁通軌跡量子數,視該旋轉躍遷中所涉及之角動量分量的該數目而定,及/或 (iii) 所觀測到的拉曼光譜峰值之子分裂或位移係由於以自旋磁矩與分子旋轉磁矩之間的該自旋軌道耦合期間之磁通量量子h/2e為單位的磁鏈,同時發生該旋轉躍遷; g) 具有拉曼光譜躍遷之H2 (1/4),其包含 (i) 具有自旋軌道耦合及磁通軌跡耦合之純
Figure 02_image021
Figure 02_image023
旋轉躍遷:
Figure 02_image025
, (ii) 包含
Figure 02_image027
Figure 02_image029
旋轉躍遷與
Figure 02_image031
Figure 02_image033
自旋旋轉躍遷之協同躍遷:
Figure 02_image035
,或 (iii) 雙躍遷,最終旋轉量子數
Figure 02_image037
Figure 02_image039
Figure 02_image041
,其中在純、協同及雙躍遷中亦觀測到了對應自旋軌道耦合及磁通軌跡耦合; h) H2 (1/4) UV拉曼峰值(例如,如在複合GaOOH:H2 (1/4):H2 O及Ni箔上所記錄,其曝露於在12,250至15,000 cm- 1 區中所觀測到之反應電漿,其中線匹配協同純旋轉躍遷
Figure 02_image043
Figure 02_image045
自旋躍遷與自旋軌道耦合及磁通鏈分裂:
Figure 02_image047
); i) HD(1/4)拉曼光譜之旋轉能量相對於H2 (1/4)之旋轉能量位移¾倍; j) 該HD(1/4)拉曼光譜之該等旋轉能量匹配 (i) 具有純HD(1/4)
Figure 02_image049
Figure 02_image051
旋轉躍遷與自旋軌道耦合及磁通軌跡耦合:
Figure 02_image053
, (ii) 包含
Figure 02_image055
Figure 02_image057
旋轉躍遷與
Figure 02_image059
Figure 02_image061
自旋旋轉躍遷之協同躍遷:
Figure 02_image063
,或 (iii) 雙躍遷,最終旋轉量子數
Figure 02_image065
Figure 02_image067
Figure 02_image069
Figure 02_image071
其中在純及協同躍遷兩者中亦觀測到了自旋軌道耦合及磁通軌跡耦合; k) 用一電子束之高能量電子輻照之H2 (1/4)-稀有氣體混合物在紫外(150至180 nm)區中展示相等的0.25 eV間隔的譜線發射,其具有在8.25 eV下之截止值,該截止值匹配H2 (1/4)
Figure 02_image073
Figure 02_image075
振動躍遷,其中一系列旋轉躍遷對應於H2 (1/4) P分支,其中 (i) 光譜擬合良好地匹配
Figure 02_image077
Figure 02_image079
。其中0.515 eV及0.01509 eV分別為普通分子氫之振動及旋轉能量, (ii)觀測到匹配亦藉由拉曼光譜分析觀測到之旋轉自旋軌道分裂能量的小型衛星線,且(iii)旋轉自旋軌道分裂能量間隔匹配
Figure 02_image081
,其中1.5涉及
Figure 02_image083
Figure 02_image085
分裂; l) 藉由在一KCl結晶基質中捕集之H2 (1/4)之電子束激發觀測到H2 (1/4) P分支旋轉躍遷與
Figure 02_image087
Figure 02_image089
振動躍遷之光譜發射,其中 (i) 該等旋轉峰值匹配一自由轉子之峰值; (ii) 由於H2 (1/4)之振動與該KCl基質之相互作用,振動能藉由有效質量之增大而位移; (iii) 該光譜擬合良好地匹配
Figure 02_image091
Figure 02_image093
,其包含以0.25 eV之間隔的峰值,且 (iv) H2 (1/4)振動能移之相對量值匹配由KCl中捕集之普通H2 引起的對振轉光譜之相對效應; m) 具有一HeCd能量雷射之該拉曼光譜展示在8000 cm- 1 至18,000 cm- 1 區中間隔之一系列1000 cm- 1 (0.1234 eV)等能量,其中將拉曼光譜轉換成螢光或光致發光光譜將匹配揭露為在KCl基質中對應於H2 (1/4)之電子束激發發射光譜的H2 (1/4)之二階振轉光譜,其由
Figure 02_image095
Figure 02_image097
給出且包含0.25 eV能量間隔旋轉躍遷峰值下之基質位移
Figure 02_image099
Figure 02_image101
旋轉躍遷;; n) 在高於4400 cm- 1 之能量範圍中觀測到H2 (1/4)之紅外旋轉躍遷,其中除了固有磁場以外,強度隨施加磁場而增大,且亦觀測到旋轉躍遷與自旋軌道躍遷耦合; o) 藉由X射線光電子光譜分析(XPS)觀測到H2 (1/4)藉由對應於496 eV之總能量之康普頓效應的所允許雙重電離; p) 藉由氣相層析法觀測到H2 (1/4),考慮到氫氣及氦氣具有最快的先前已知遷移速率及對應最短滯留時間,其展示比任何已知氣體之遷移速率更快的一遷移速率; q) 極紫外線(EUV)光譜分析記錄具有一10.1 nm截止值(例如,如對應於藉由初生HOH催化劑催化之低能量氫反應躍遷H至H(1/4))之極紫外線連續輻射; r) 質子魔角自旋核磁諧振光譜分析(1 H MAS NMR)記錄-4 ppm至-5 ppm區中之一高場基質水峰; s) 當複數個氫產物分子之磁矩協作性地相互作用時,諸如順磁性、超順磁性及甚至鐵磁性之體磁性,其中超順磁性(例如,如使用一振動樣品磁力計量測包含反應產物之化合物之磁化率所觀測到); t) 記錄於曝露於來自反應產物之分子氣體源的K2 CO3 及KOH上之飛行時間次級離子質譜分析(ToF-SIMS)及電噴灑飛行時間次級離子質譜分析(ESI-ToF),其藉由M+2多聚體單元之獨特觀測結果(例如,
Figure 02_image103
Figure 02_image105
,其中n為整數)及由於氫陰離子之穩定性的密集
Figure 02_image107
峰值展示反應產物(例如,H2 (1/4)氣體)至包含氧陰離子之無機化合物的複合,及 u) 由分子氫核組成之反應產物表現得如有機分子,如藉由將分段成無機離子之一有機分子基質柱上之一層析峰值所證明。在各種實施中,反應產生表徵為以下各者中的一或多者之高能特徵: (i) 在包含H原子及初生HOH或H基催化劑之電漿,諸如氬氣-H2 、H2 及H2 O蒸汽電漿中具有超過100 eV之H巴耳麥a線的異常都卜勒譜線展寬, (ii) H激發態線反轉, (iii) 異常H電漿餘輝持續時間, (iv) 等效於大約10倍的火藥莫耳的衝擊波傳播速度及對應壓力,其中僅約1%之功率與該衝擊波耦合, (v) 來自一10 μl水合銀丸粒的高達20 MW之光功率,及 (vi) 在340,000 W之功率位準下驗證之SunCell電力系統的熱量測定。此等反應可產生表徵為以下各者中的一或多者之氫產物: a)  具有在1900至2200 cm- 1 、5500至6400 cm- 1 及7500至8500 cm- 1 之一或多個範圍內或在1900至2200 cm- 1 之範圍的整數倍內的拉曼峰值的氫產物; b)  具有以0.23至0.25 eV之一整數倍間隔開之複數個拉曼峰值的一氫產物; c)  具有在1900至2000cm- 1 之整數倍的範圍內的紅外峰值的氫產物; d)  具有以0.23至0.25 eV之一整數倍間隔開之複數個紅外峰值的一氫產物; e)  具有介於200至300 nm之範圍內的具有為0.23至0.3 eV之一整數倍之一間隔的複數個UV螢光發射光譜峰值之一氫產物; f)  具有介於200至300 nm之範圍內的具有為0.2至0.3 eV之一整數倍之一間隔的複數個電子束發射光譜峰值之一氫產物; g)  具有介於5000至20,000 cm- 1 之範圍內的具有1000 ±200 cm- 1 之一整數倍之一間隔的複數個拉曼光譜峰值之一氫產物; h)  具有介於490至525 eV之範圍內的一能量處之一X射線光電子光譜峰值之一氫產物; i)   引起一高磁場MAS NMR基質位移的一氫產物; j)   相對於TMS具有大於-5 ppm之一高磁場MAS NMR或液體NMR位移之一氫產物; m) 包含金屬氫化物及金屬氧化物中之至少一者的氫產物,其進一步包含氫,其中金屬包含Zn、Fe、Mo、Cr、Cu及W中之至少一者; o)  包含一無機化合物Mx Xy 及H2 之一氫產物,其中M為一陽離子且X為具有M(Mx Xy H2 )n之電噴灑游離飛行時間次級離子質譜分析(ESI-ToF)及飛行時間次級離子質譜分析(ToF-SIMS)峰值中之至少一者的一陰離子,其中n為一整數; p)  包含分別具有
Figure 02_image109
Figure 02_image111
之電噴灑游離飛行時間次級離子質譜分析(ESI-ToF)及飛行時間次級離子質譜分析(ToF-SIMS)峰值中之至少一者的K2 CO3 H2 及KOHH2 中之至少一者之一氫產物; q)  包含金屬氫化物及金屬氧化物中之至少一者的磁性氫產物,其進一步包含氫,其中金屬包含Zn、Fe、Mo、Cr、Cu、W及反磁金屬中之至少一者; r)  包含金屬氫化物及金屬氧化物中之至少一者的氫產物,其進一步包含氫,其中金屬包含Zn、Fe、Mo、Cr、Cu、W及反磁金屬中之至少一者,該產物藉由磁性磁化率量測術展現磁性; s)  包含在電子順磁共振(EPR)光譜分析中無活性之金屬的氫產物,其中EPR光譜包含約2.0046±20%之g因數中之至少一者,該EPR光譜分裂成間隔約1至10 G之一系列峰值,其中每一主峰值細分成間隔約0.1至1 G之一系列峰值; t)   包含在電子順磁共振(EPR)光譜分析中無活性之金屬的氫產物,其中EPR光譜至少包含約m1 X 7.43X10- 27 J ±20%之電子自旋軌道耦合分裂能量及約m2 X 5.78X10- 28 J ±20%之磁通軌跡分裂,及約1.58 X10- 23 J ±20%之二聚體磁矩相互作用分裂能量; v)  包含具有一負氣相層析法峰值之帶有氫或氦載體的一氣體之一氫產物; w) 具有
Figure 02_image113
之一四極時刻/e的一氫產物,其中p為一整數; x)  包含具有介於(J+1)44.30 cm- 1 ±20 cm- 1 之範圍內的整數J至J+1躍遷之一端對端旋轉能量之一分子二聚體的一質子氫產物,其中包含氘之該分子二聚體之該相對應的旋轉能量為包含質子之該二聚體的旋轉能量之½; y)  包含具有來自以下群組之至少一個參數的分子二聚體之一氫產物:(i)1.028 Å ±10%的一氫分子分離距離,(ii)在氫分子之間23 cm- 1 ±10%的一振動能,及(iii)在氫分子之間0.0011 eV ±10%的一凡得瓦能量(van der Waals energy); z)  包含具有來自以下群組之至少一個參數之一固體的一氫產物:(i)1.028 Å ±10%之一氫分子分離距離,(ii)在氫分子之間23 cm- 1 ±10%的一振動能,及(iii)在氫分子之間0.019 eV ±10%的一凡得瓦能量; aa) 氫產物,其具有FTIR及拉曼光譜特徵,該等特徵具有(i)(J+1)44.30 cm- 1 ±20 cm- 1 ,(ii)(J+1)22.15 cm- 1 ±10 cm- 1 ,及(iii)23 cm- 1 ±10%;及/或具有展示1.028 Å ±10%之氫分子間隔之X射線或中子繞射圖案;及/或具有0.0011 eV ±10%/分子氫之氣化能量的量熱判定; bb) 固體氫產物,其具有FTIR及拉曼光譜特徵,該等特徵具有(i)(J+1)44.30 cm- 1 ±20 cm- 1 ,(ii) (J+1)22.15 cm- 1 ±10 cm- 1 及(iii) 23 cm- 1 ±10%;及/或具有展示1.028 Å ±10%的氫分子間隔之X射線或中子繞射圖案;及/或具有0.019 eV ±10%/分子氫之汽化能量的量熱判定。 cc) 包含氫陰離子之氫產物,該氫陰離子具有磁性且具有在其自由結合結合能區中以磁性為單位之磁鏈,及 dd) 氫產物,其中高壓液相層析(HPLC)展示滯留時間比使用含有水之溶劑之有機柱之載體空隙體積時間長的層析峰值,其中藉由質譜分析(諸如ESI-ToF)偵測峰值展示至少一種無機化合物之片段。The reactant-induced reaction generates sufficient energy to initiate the formation of plasma in the vessel. The reaction may be characterized as generating one or more of the hydrogen product by the following: a) one molecule of hydrogen product H 2 (e.g., H 2 (1 / p) (p is greater than 1 and an integer less than or equal to one 137) , which contains unpaired electrons), which produces an electron paramagnetic resonance (EPR) spectral analysis signal; b) molecular hydrogen product H 2 (eg, H 2 (1/4)) with an EPR spectrum containing The main peak of the g-factor of 2.0046386, which is optionally split into a series of paired peaks whose members are separated by spin-orbit coupling energies that are a function of the corresponding electron spin-orbit coupling quantum numbers , wherein (i) the unpaired electron magnetic moment based on H 2 (1/4) of the diamagnetic susceptibility to induce a magnetic moment in the unpaired electron anti H 2 (1/4) of the molecular orbital; (ii) the inherent paired - the corresponding magnetic moments of unpaired current interactions and the spin-orbit coupling energies due to the magnetic moments due to relative rotational motion around the internuclear axis; (iii) further subdividing each spin-orbit splitting peak into matching integer flux trajectories A series of equally spaced peaks of energy that are a function of the quantum number of the electron flux trajectory corresponding to the number of angular momentum components involved in the transition, and (iv) in addition, due to the magnetic flux accumulated by the molecular orbital With increasing magnetic energy of the chain, the spin-orbit splitting increases with the number of spin-orbit coupling quantum numbers on the low field side of the series of paired peaks. c) For an EPR frequency of 9.820295 GHz, (i) the low-field peak position due to the combined displacement caused by the magnetic energy and the spin-orbit coupling energy of H 2 (1/4)
Figure 02_image001
for
Figure 02_image003
; (ii) has a quantized spin-orbit splitting energy
Figure 02_image005
and electron spin-orbit coupling quantum numbers
Figure 02_image007
high field peak position
Figure 02_image009
for
Figure 02_image011
, and/or (iii) for the electron flux trajectory quantum number
Figure 02_image013
, the interval of an integer series of peaks at each spin-orbit peak position
Figure 02_image015
for
Figure 02_image017
and
Figure 02_image019
d) a hydride ion H (eg, H (1/p)), which contains a paired and unpaired electron in a common atomic orbital, which is transmitted by high-resolution visible light in the range of 400 to 410 nm Spectroscopic analysis reveals flux linkage in quantified units of h/2e observed at H − (1/2); e) flux linkage, which is analyzed by Raman spectroscopy at the rotational energy level at H 2 (1/4) during the laser radiation and by the high energy electron beams from electron collisions with H 2 (1/4) of the observed excitation quantization unit of h / 2e of the units; F) a low energy hydrogen molecules (e.g., H 2 (1/p)), which has the Raman spectral transition of the spin-orbit coupling between the spin magnetic moment of the unpaired electron and the orbital magnetic moment due to molecular rotation, where (i) the energy of the spin transition By these spin-orbit coupling energies are displaced as a function of the corresponding electron spin-orbit coupling quantum numbers; (ii) the molecular rotation peaks displaced by the spin-orbit energy are further displaced by the flux linkage energy, where each The energy corresponds to its electron flux trajectory quantum number, depending on the number of angular momentum components involved in the rotational transition, and/or (iii) the observed sub-splitting or displacement of the Raman spectral peak due to The magnetic flux linkage in units of the magnetic flux quantum h/2e during the spin-orbit coupling between the gyromagnetic moment and the molecular rotational magnetic moment, while the rotational transition occurs; g) H 2 (1/4) with a Raman spectral transition , which includes (i) a pure with spin-orbit coupling and flux-track coupling
Figure 02_image021
to
Figure 02_image023
Rotational transition:
Figure 02_image025
, (ii) contains
Figure 02_image027
to
Figure 02_image029
rotational transition and
Figure 02_image031
to
Figure 02_image033
Synergistic transition of spin spin transition:
Figure 02_image035
, or (iii) double transition, the final spin quantum number
Figure 02_image037
and
Figure 02_image039
:
Figure 02_image041
, where the corresponding spin-orbit coupling and flux-track coupling are also observed in pure, cooperative, and double transitions; h) H 2 (1/4) UV Raman peaks (eg, as in the composite GaOOH:H 2 (1/ 4): H 2 O and the Ni recording foil, which is exposed to the 12,250 to 15,000 cm - plasma reaction zone observed in the 1, wherein the matching line synergistic purely rotational transitions
Figure 02_image043
and
Figure 02_image045
Spin transition and spin-orbit coupling and flux chain splitting:
Figure 02_image047
); i) the rotational energy of the HD(1/4) Raman spectrum is shifted by a factor of ¾ relative to the rotational energy of H 2 (1/4); j) the rotational energies of the HD(1/4) Raman spectrum match (i) with pure HD (1/4)
Figure 02_image049
to
Figure 02_image051
Spin transition and spin-orbit coupling and flux-track coupling:
Figure 02_image053
, (ii) contains
Figure 02_image055
to
Figure 02_image057
rotational transition and
Figure 02_image059
to
Figure 02_image061
Synergistic transition of spin spin transition:
Figure 02_image063
, or (iii) double transition, the final spin quantum number
Figure 02_image065
;
Figure 02_image067
:
Figure 02_image069
Figure 02_image071
Among them, spin-orbit coupling and flux-track coupling were also observed in both pure and cooperative transitions; k) H 2 (1/4)-noble gas mixtures irradiated with high-energy electrons of an electron beam in the ultraviolet (150 to 180 nm) in the region of 0.25 eV spectral line display interval equal emission having a cutoff value of 8.25 eV at the cutoff value matches H 2 (1/4)
Figure 02_image073
to
Figure 02_image075
Vibrational transitions, where a series of rotational transitions correspond to the H 2 (1/4) P branch, where (i) the spectral fit matches well
Figure 02_image077
;
Figure 02_image079
. where 0.515 eV and 0.01509 eV are the vibrational and rotational energies of ordinary molecular hydrogen, respectively, (ii) a small satellite line matching the spin-orbit splitting energy also observed by Raman spectroscopy was observed, and (iii) the spin Spin-orbit splitting energy interval matching
Figure 02_image081
, of which 1.5 involves
Figure 02_image083
and
Figure 02_image085
split; l) The H 2 (1/4) P branch rotational transition was observed by electron beam excitation of H 2 (1/4) trapped in a KCl crystalline matrix with
Figure 02_image087
to
Figure 02_image089
The vibration spectral emission transition, wherein (i) those consisting of a peak matched the peak of rotation of the rotor; (ii) due to vibrations H 2 (1/4) of the interaction matrix of KCl, the vibration can be effectively increased the mass of large and shifted; (iii) the spectral fit matches well
Figure 02_image091
;
Figure 02_image093
Comprising the peak of 0.25 eV intervals, Common H and (iv) H 2 (1/4) to match the relative magnitude of vibration energy by the shift of the trap 2 in KCl-induced relative rotation vibration spectrum of effects; m ) with a HeCd energy laser exhibiting the Raman spectrum at a series of 1000 cm - 1 (0.1234 eV) isoenergies at intervals in the 8000 cm- 1 to 18,000 cm - 1 region, where the Raman spectrum is converted to fluorescence or the photoluminescence spectrum matched as disclosed KCl matrix corresponding to H 2 (1/4) of an electron beam excitation emission spectrum of H 2 (1/4) rotation of the second order vibration spectrum, consisting of
Figure 02_image095
;
Figure 02_image097
gives and includes the matrix displacement at the peak of the rotational transition at 0.25 eV energy interval
Figure 02_image099
to
Figure 02_image101
Rotational transitions;; n) Infrared rotational transitions of H 2 (1/4) were observed in the energy range above 4400 cm − 1 , where in addition to the intrinsic magnetic field, the intensity increased with applied magnetic field, and rotation was also observed The transition is coupled to the spin-orbit transition; o) The allowed double ionization of H 2 (1/4) by the Compton effect corresponding to a total energy of 496 eV was observed by X-ray photoelectron spectroscopy (XPS); p ) H 2 (1/4) was observed by gas chromatography, which, considering that hydrogen and helium have the fastest previously known migration rates and corresponding shortest residence times, exhibit higher migration rates than any known gas A fast migration rate; q) Extreme ultraviolet (EUV) spectroscopic analysis recorded with a 10.1 nm cutoff (eg, as corresponding to the transition H to H(1/4) in the low energy hydrogen reaction catalyzed by a nascent HOH catalyst) Extreme ultraviolet continuous radiation; r) Proton magic angle spin nuclear magnetic resonance spectroscopy ( 1 H MAS NMR) recording a high-field matrix water peak in the -4 ppm to -5 ppm region; s) When the magnetic properties of multiple hydrogen product molecules When the moments interact cooperatively, bulk magnetism such as paramagnetism, superparamagnetism, and even ferromagnetism, where superparamagnetism (e.g., as observed using a vibrating sample magnetometer to measure the magnetic susceptibility of compounds containing reaction products) ); t) Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and electrospray time-of-flight secondary ion mass spectrometry (ESI-ToF ) recorded on K 2 CO 3 and KOH exposed to molecular gas sources from the reaction products ) by unique observations of M+2 multimeric units (eg,
Figure 02_image103
and
Figure 02_image105
, where n is an integer) and the density due to the stability of hydride ions
Figure 02_image107
The reaction product shows a peak (e.g., H 2 (1/4) gas) to a composite comprising an inorganic oxygen compound anions, and u) the reaction product of hydrogen molecules behave as a core composition of organic molecules, such as segmented by Evidenced by a chromatographic peak on an organic molecular matrix column, an inorganic ion. In various embodiments, the reaction is characterized by one or more of the high-energy characterized by the following: (i) containing H atoms or H and plasma primary HOH group of catalysts, such as argon -H 2, H 2, and Anomalous Doppler line broadening with H Barmer a-lines over 100 eV in H 2 O vapor plasma, (ii) H excited state line reversal, (iii) Anomalous H plasma afterglow duration, (iv ) the shock wave propagation velocity and corresponding pressure equivalent to about 10 times the molar of gunpowder, with only about 1% of the power coupled to the shock wave, (v) up to 20 MW of optical power from a 10 μl hydrated silver pellet, and (vi) calorimetry of the SunCell power system validated at a power level of 340,000 W. Such reactions can produce hydrogen products characterized by one or more of the following: a) having one or more ranges of 1900 to 2200 cm- 1 , 5500 to 6400 cm - 1, and 7500 to 8500 cm - 1 or 1900 to the 2200 cm - hydrogen product Raman peak within the range of an integer multiple of 1; b) has a 0.25 eV 0.23 to one integral multiple of a plurality of spaced apart Raman peak of a hydrogen product; c) 1900 has to 2000cm - hydrogen product IR peaks within a range of an integer multiple; D) having the opening to 0.25 eV 0.23 to one integral multiple of a plurality of spaced infrared hydrogen product peak; E) having between 200 A hydrogen product having a plurality of UV fluorescence emission spectral peaks separated by an integer multiple of 0.23 to 0.3 eV in the range to 300 nm; f) having a range of 0.2 to 300 nm A hydrogen product of a plurality of electron beam emission spectral peaks spaced to an integer multiple of 0.3 eV; g) having a range between 5000 and 20,000 cm - 1 with an integer multiple of 1000 ± 200 cm - 1 a hydrogen product of a spaced Raman spectral peak; h) a hydrogen product with an X-ray photoelectron spectral peak at an energy in the range of 490 to 525 eV; i) induced an upfield MAS NMR a matrix-shifted monohydrogen product; j) a hydrogen product with an upfield MAS NMR or liquid NMR shift of greater than -5 ppm relative to TMS; m) a hydrogen product comprising at least one of a metal hydride and a metal oxide further comprising hydrogen, wherein the metal comprises Zn, Fe, Mo, Cr, Cu and W and at least one of; O) comprising an inorganic compound M x X y 2 hydrogen product and one H, wherein M is a cation and X is one of at least one of electrospray free time-of-flight secondary ion mass spectrometry (ESI-ToF) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) peaks with M(M x X y H 2 )n anion, where n is an integer; p) includes, respectively,
Figure 02_image109
and
Figure 02_image111
At least one of K 2 CO 3 H 2 and KOHH 2 of at least one of the electrospray free time-of-flight secondary ion mass spectrometry (ESI-ToF) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) peaks a hydrogen product; q) a magnetic hydrogen product comprising at least one of a metal hydride and a metal oxide, further comprising hydrogen, wherein the metal comprises one of Zn, Fe, Mo, Cr, Cu, W, and diamagnetic metals at least one; r) a hydrogen product comprising at least one of a metal hydride and a metal oxide, further comprising hydrogen, wherein the metal comprises at least one of Zn, Fe, Mo, Cr, Cu, W, and a diamagnetic metal or, the product exhibits magnetic properties by magnetic susceptibility measurements; s) hydrogen products containing metals that are inactive in electron paramagnetic resonance (EPR) spectroscopic analysis, wherein the EPR spectrum contains in a g-factor of about 2.0046 ± 20% At least one of, the EPR spectrum is split into a series of peaks spaced about 1 to 10 G, wherein each main peak is subdivided into a series of peaks spaced about 0.1 to 1 G; t) Included in Electron Paramagnetic Resonance (EPR) The hydrogen product of a metal inactive in spectroscopic analysis, wherein the EPR spectrum contains at least an electron spin-orbit coupling splitting energy of about m 1 X 7.43X10 - 27 J ± 20% and an electron spin-orbit coupling splitting energy of about m 2 X 5.78X10 - 28 J ± 20% Magnetic flux trajectory splitting, and about 1.58 X10 - 23 J ±20% of the dimer magnetic moment interaction splitting energy; v) containing a gas with a hydrogen or helium carrier with a negative gas chromatography peak - a hydrogen product; w) having
Figure 02_image113
a hydrogen product at a quadrupole instant/e, where p is an integer; x) includes a transition from an integer J to J+1 in the range of (J+1) 44.30 cm − 1 ± 20 cm 1 A proton hydrogen product of a molecular dimer of end-to-end rotational energy, wherein the corresponding rotational energy of the molecular dimer containing deuterium is ½ the rotational energy of the dimer containing protons; y) contains A hydrogen product of a molecular dimer having at least one parameter from the group of: (i) a separation distance of a hydrogen molecule of 1.028 Å ± 10%, (ii) a separation distance of 23 cm 1 ± 10% between hydrogen molecules a vibrational energy, and (iii) a van der Waals energy of 0.0011 eV ± 10% between hydrogen molecules; z) a hydrogen product comprising a solid having one of at least one parameter from the group : (i) 1.028 Å ±10% of the separation distance of a hydrogen molecule, (ii) a vibrational energy of 23 cm - 1 ±10% between hydrogen molecules, and (iii) 0.019 eV ±10% between hydrogen molecules One Van der Waals energy of ; aa) hydrogen product with FTIR and Raman spectral features with (i)(J+1) 44.30 cm - 1 ±20 cm - 1 , (ii)(J+1 ) 22.15 cm - 1 ±10 cm - 1 , and (iii) 23 cm - 1 ±10%; and/or have an X-ray or neutron diffraction pattern exhibiting a hydrogen molecular spacing of 1.028 Å ±10%; and/or Calorimetric determination with gasification energy of 0.0011 eV ±10%/molecular hydrogen; bb) solid hydrogen product with FTIR and Raman spectroscopic features having (i)(J+1)44.30 cm - 1 ± 20 cm - 1 , (ii) (J+1) 22.15 cm - 1 ±10 cm - 1 and (iii) 23 cm - 1 ±10%; and/or with an X exhibiting a hydrogen molecular spacing of 1.028 Å ±10% Ray or neutron diffraction pattern; and/or calorimetric determination with a vaporization energy of 0.019 eV ±10%/molecular hydrogen. cc) a hydrogen product comprising a hydride ion that is magnetic and has a magnetic linkage in units of magnetism in its free binding binding energy region, and dd) a hydrogen product in which high pressure liquid chromatography (HPLC) shows a retention time Chromatographic peaks longer than the carrier void volume using an organic column containing water in a solvent, wherein the peaks detected by mass spectrometry (such as ESI-ToF) show fragments of at least one inorganic compound.

在各種實施中,氫產物可類似地表徵為由各種低能量氫反應器形成之產物,諸如藉由在包含水蒸汽之大氣中進行電線爆震而形成之彼等產物。此類產物可: a)  包含金屬氫化物及金屬氧化物中之至少一者,其進一步包含氫,其中金屬包含Zn、Fe、Mo、Cr、Cu及W中之至少一者且氫包含H; b)  包含無機化合物Mx Xy 及H2 ,其中M為金屬陽離子且X為陰離子,且電噴灑游離飛行時間次級離子質譜(ESI-ToF)及飛行時間次級離子質譜(ToF-SIMS)中之至少一者包含M(Mx Xy H(1/4)2 )n之峰值,其中n為整數; c)  為磁性且包含金屬氫化物及金屬氧化物中之至少一者,其進一步包含氫,其中金屬包含Zn、Fe、Mo、Cr、Cu、W及反磁金屬中之至少一者,且氫為H(1/4),及 d)  包含金屬氫化物及金屬氧化物中之至少一者,其進一步包含氫,其中金屬包含Zn、Fe、Mo、Cr、Cu、W及反磁金屬中之至少一者且H為H(1/4),其中產物藉由磁性磁化率量測術展現磁性。In various implementations, the hydrogen products can be similarly characterized as those formed by various low energy hydrogen reactors, such as those formed by wire detonation in an atmosphere containing water vapor. Such products may: a) comprise at least one of a metal hydride and a metal oxide, further comprising hydrogen, wherein the metal comprises at least one of Zn, Fe, Mo, Cr, Cu, and W and the hydrogen comprises H; b) Comprising inorganic compounds M x X y and H 2 , wherein M is a metal cation and X is an anion, and electrospray free time-of-flight secondary ion mass spectrometry (ESI-ToF) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) at least one of which comprises a peak of M(M x X y H(1/4) 2 )n, where n is an integer; c) is magnetic and comprises at least one of a metal hydride and a metal oxide, which further comprising hydrogen, wherein the metal comprises at least one of Zn, Fe, Mo, Cr, Cu, W and a diamagnetic metal, and the hydrogen is H(1/4), and d) comprising a metal hydride and a metal oxide At least one, which further comprises hydrogen, wherein the metal comprises at least one of Zn, Fe, Mo, Cr, Cu, W, and a diamagnetic metal and H is H(1/4), wherein the product is determined by magnetic susceptibility Geometry shows magnetism.

在一些實施例中,藉由反應形成之氫產物包含與以下各者中之至少一者複合之氫產物:(i)不同於氫之元素;(ii)包含H+ 、普通H2 、普通H- 及普通

Figure 02_image115
中之至少一者的普通氫物種;有機分子物種;及(iv)無機物種。在一些實施例中,氫產物包含氧陰離子化合物。在各種實施中,氫產物(或來自包含集氣劑之實施例的經回收氫產物)可包含至少一種具有選自以下之群組的式之化合物: a)  MH、MH2 或M2 H2 ,其中M為一鹼性陽離子且H或H2 為氫產物; b)  MHn,其中n為1或2,M為一鹼土陽離子,且H為氫產物; c)  MHX,其中M為一鹼性陽離子,X為諸如鹵素原子之一中性原子、一分子或諸如鹵素陰離子的一單獨帶負電陰離子中之一者,且H為氫產物; d)  MHX,其中M為一鹼土陽離子,X為一單獨帶負電陰離子,且H為氫產物; e)  MHX,其中M為一鹼土陽離子,X為一雙帶負電陰離子,且H為氫產物; f)  M2 HX,其中M為一鹼性陽離子,X為一單獨帶負電陰離子,且H為氫產物; g)  MHn ,其中n為一整數,M為一鹼性陽離子,且該化合物之氫內容物Hn 包含至少一種氫產物; h)  M2 Hn ,其中n為一整數,M為一鹼土陽離子,且該化合物之氫內容物Hn 包含至少一種氫產物; i)   M2 XHn ,其中n為一整數,M為一鹼土陽離子,X為一單獨帶負電陰離子,且該化合物之氫內容物Hn 包含至少一種氫產物; j)   M2 X2 Hn ,其中n為1或2,M為一鹼土陽離子,X為一單獨帶負電陰離子,且該化合物之氫內容物Hn 包含至少一種氫產物; k)  M2 X3 H,其中M為一鹼土陽離子,X為一單獨帶負電陰離子,且H為氫產物; l)   M2 XHn ,其中n為1或2,M為鹼土陽離子,X為雙帶負電陰離子,且化合物之氫內容物Hn 包含至少一種氫產物; m) M2 XX'H,其中M為一鹼土陽離子,X為一單獨帶負電陰離子,X'為一雙帶負電陰離子,且H為氫產物; n)  MM'Hn 其中n為自1至3之整數,M為鹼土陽離子,M'為鹼金屬陽離子且化合物之氫內容物Hn 包含至少一種氫產物; o)  MM'XHn ,其中n為1或2,M為一鹼土陽離子,M'為鹼金屬陽離子,X為單獨帶負電陰離子且該化合物之氫內容物Hn 包含至少一種氫產物; p)  MM'XH,其中M為一鹼土陽離子,M'為一鹼金屬陽離子,X為一雙帶負電陰離子,且H為氫產物; q)  MM'XX'H,其中M為一鹼土陽離子,M'為一鹼金屬陽離子,X及X'為單獨帶負電陰離子,且H為氫產物; r)  MXX'Hn ,其中n為1至5之一整數,M為一鹼性或鹼土陽離子,X為一單獨或雙帶負電陰離子,X'為一金屬或類金屬、一過渡元素、一內部過渡元素或一稀土元素,且該化合物之氫內容物Hn 包含至少一種氫產物; s)  MHn ,其中n為一整數,M為一陽離子,諸如一過渡元素、一內部過渡元素或一稀土元素,且該化合物之氫內容物Hn 包含至少一種氫產物; t)   MXHn ,其中n為一整數,M為一陽離子,諸如一鹼性陽離子、鹼土陽離子,X為另一陽離子,諸如一過渡元素、內部過渡元素或一稀土元素陽離子,且該化合物之該氫內容物Hn 包含至少一種氫產物; u)
Figure 02_image117
,其中M為鹼性陽離子或其他+1陽離子,m及n各自為整數,且化合物之氫內容物Hm 包含至少一種氫產物; v)
Figure 02_image119
,其中M為一鹼性陽離子或其他+1陽離子,m及n各自為一整數,X為一單獨帶負電陰離子,且該化合物之氫內容物Hm 包含至少一種氫產物; w)
Figure 02_image121
,其中M為一鹼性陽離子或其他+1陽離子,n為一整數,且該化合物之氫內容物H包含至少一種氫產物; x)
Figure 02_image123
,其中M為一鹼性陽離子或其他+1陽離子,n為一整數,且該化合物之該氫內容物H包含至少一種氫產物; y)
Figure 02_image125
,其中m及n各自為一整數,M及M'各自為一鹼性或鹼土陽離子,X為一單獨或雙帶負電陰離子,且該化合物之該氫內容物Hm 包含至少一種氫產物,及 z)
Figure 02_image127
,其中m及n各自為一整數,M及M'各自為一鹼性或鹼土陽離子,X及X'為一單獨或雙帶負電陰離子,且該化合物之該氫內容物Hm 包含至少一種氫產物。In some embodiments, the hydrogen product formed by the reaction comprises a hydrogen product complexed with at least one of: (i) an element other than hydrogen; (ii) comprising H + , ordinary H 2 , ordinary H - and ordinary
Figure 02_image115
Ordinary hydrogen species of at least one of; organic molecular species; and (iv) inorganic species. In some embodiments, the hydrogen product comprises an oxyanion compound. In various embodiments, the hydrogen product (from Example or aerosol comprising a set of warp recovered hydrogen product) may comprise at least one compound of formula selected from the group having: a) MH, MH 2, or M 2 H 2 wherein M is an alkali cation or H 2 and H is hydrogen product; b) MHn, wherein n is 1 or 2, M is an alkaline cation, and H is a hydrogen product; c) MHX, where M is an alkali cation, X is one of a neutral atom such as a halogen atom, a molecule or a single negatively charged anion such as a halogen anion, and H is a hydrogen product; d) MHX, wherein M is an alkaline earth cation and X is a single negatively charged anion, and H is a hydrogen product; e) MHX, where M is an alkaline earth cation, X is one pair of negatively charged anion, and H is a hydrogen product; f) M 2 HX, where M is an alkali cation, X is a single negatively charged anion, and H is a hydrogen product; g) MH n , where n is an integer, M is a basic cation, and the hydrogen content H n of the compound comprises at least one hydrogen product; h) M 2 H n , where n is an integer, M is an alkaline earth cation, and the hydrogen content H n of the compound comprises at least one hydrogen product; i) M 2 XH n , where n is an integer and M is an alkaline earth cation, X is a single negatively charged anion, and the hydrogen content H n of the compound comprises at least one hydrogen product; j) M 2 X 2 H n , where n is 1 or 2, M is an alkaline earth cation, and X is a single band negatively charged anion and hydrogen the compound of content H n contains at least one hydrogen product; k) M 2 X 3 H , wherein M is an alkaline earth cation, X is a singly negatively charged anion, and H is a hydrogen product; L) M 2 XH n , where n is 1 or 2, M is an alkaline earth cation, X is a double negatively charged anion, and the hydrogen content H n of the compound comprises at least one hydrogen product; m) M 2 XX'H, where M is an alkaline earth cation, X is a single negatively charged anion, X' is a double negatively charged anion, and H is a hydrogen product; n) MM'H n where n is an integer from 1 to 3, M is an alkaline earth cation, and M' is a base metal cation and a hydrogen content H n of the compound comprises at least one hydrogen product; o) MM'XH n, wherein n is 1 or 2, M is an alkaline earth cation, M 'is an alkali metal cation, X is a singly negatively charged anion. The hydrogen content Hn of the compound comprises at least one hydrogen product; p) MM'XH, wherein M is an alkaline earth cation, M' is an alkali metal cation, X is a double negatively charged anion, and H is a hydrogen product; q ) MM'XX'H, where M is an alkaline earth cation, M 'is an alkali metal cation, X and X' is a singly negatively charged anion, and H is a hydrogen product; r) MXX'H n, where n is 1 to An integer of 5, M is an alkaline or alkaline earth cation, X is a single or double negatively charged anion ion, X' is a metal or metalloid, a transition element, an internal transition element or a rare earth element, and the hydrogen content H n of the compound comprises at least one hydrogen product; s) MH n , where n is an integer, M is a cation, such as a transition element, an internal transition element or a rare earth element, and the hydrogen content H n of the compound comprises at least one hydrogen product; t) MXH n , where n is an integer and M is a cation, such as a basic cation, alkaline earth cation, X is another cation, such as a transition element, internal transition element or a rare earth cation, and the hydrogen content H n of the compound comprises at least one hydrogen product; u)
Figure 02_image117
Wherein M is a alkali cation or other cation + 1, m and n are each an integer, and the hydrogen content H m of a compound containing at least one hydrogen product; V)
Figure 02_image119
, wherein M is a basic cation or other +1 cation, m and n are each an integer, X is a single negatively charged anion, and the hydrogen content H m of the compound comprises at least one hydrogen product; w)
Figure 02_image121
, wherein M is a basic cation or other +1 cation, n is an integer, and the hydrogen content H of the compound comprises at least one hydrogen product; x)
Figure 02_image123
, wherein M is a basic cation or other +1 cation, n is an integer, and the hydrogen content H of the compound comprises at least one hydrogen product; y)
Figure 02_image125
, Wherein m and n each are independently an alkali or alkaline earth cation, X is a single or double negatively charged anion, and the hydrogen content H m of the compound to include at least one of the hydrogen product is an integer, M and M ', and z)
Figure 02_image127
, wherein m and n are each an integer, M and M' are each a basic or alkaline earth cation, X and X' are a single or double negatively charged anion, and the hydrogen content H m of the compound contains at least one hydrogen product.

由反應形成之氫產物之陰離子可為一或多種單獨帶負電陰離子,包括鹵離子、氫氧根離子、碳酸氫根離子、硝酸根離子、雙帶負電陰離子、碳酸根離子、氧化物及硫酸根離子。在一些實施例中,氫產物嵌入於晶格中(例如,在使用位於例如容器中或排氣管線中的諸如K2 CO3 之集氣劑的情況下)。例如,氫產物可嵌入於鹽晶格中。在各種實施中,鹽晶格可包含鹼金屬鹽、鹼性鹵化物、鹼金屬氫氧化物、鹼土鹽、鹼土鹵化物、鹼土氫氧化物或其組合。The anion of the hydrogen product formed by the reaction can be one or more individually negatively charged anions, including halides, hydroxide ions, bicarbonate ions, nitrate ions, double negatively charged anions, carbonate ions, oxides, and sulfates ion. In some embodiments, the hydrogen product is embedded in the lattice (e.g., in a container or located, for example using a case where the gas collecting agent such as K 2 CO 3 in the exhaust gas line). For example, the hydrogen product can be embedded in the salt lattice. In various implementations, the salt lattice can comprise alkali metal salts, alkali halides, alkali metal hydroxides, alkaline earth salts, alkaline earth halides, alkaline earth hydroxides, or combinations thereof.

亦提供電極系統,其包含: a)  一第一電極及一第二電極; b)  一熔融金屬(例如,熔融銀、熔融鎵)流,其與該第一電極及該第二電極電接觸; c)  一循環系統,其包含用以自一儲集器汲取該熔融金屬且經由一導管(例如,一管)輸送其以產生離開該導管的該熔融金屬流之一泵; d)  一電力源,其經結構設計以提供該第一電極與該第二電極之間的一電位差; 其中該熔融金屬流同時與該第一電極及該第二電極接觸以在該等電極之間產生一電流。在一些實施例中,電力足以產生超過100 A之電流。Electrode systems are also available which include: a) a first electrode and a second electrode; b) a stream of molten metal (eg, molten silver, molten gallium) in electrical contact with the first electrode and the second electrode; c) a circulation system comprising a pump to draw the molten metal from a reservoir and deliver it through a conduit (eg, a pipe) to generate the stream of molten metal exiting the conduit; d) a power source structured to provide a potential difference between the first electrode and the second electrode; wherein the molten metal stream contacts the first electrode and the second electrode simultaneously to generate an electrical current between the electrodes. In some embodiments, the power is sufficient to generate more than 100 A of current.

亦提供電路,其可包含: a)  一加熱構件,其用於產生熔融金屬; b)  一泵抽構件,其用於自一儲集器經由一導管輸送該熔融金屬以產生離開該導管之該熔融金屬的一流; c)  一第一電極及一第二電極,其與用於跨越該第一電極及該第二電極產生一電位差的一電源供應構件電連通; 其中該熔融金屬流同時與該第一電極及該第二電極接觸以在該第一電極與該第二電極之間產生一電路。例如,在包含第一及第二電極之電路中,改良可包含使熔融金屬流穿過該等電極以允許一電流在其間流動。Circuits are also provided, which may include: a) a heating element for producing molten metal; b) a pumping member for conveying the molten metal from a reservoir through a conduit to produce a flow of the molten metal exiting the conduit; c) a first electrode and a second electrode in electrical communication with a power supply member for generating a potential difference across the first electrode and the second electrode; Wherein the molten metal stream is in contact with the first electrode and the second electrode at the same time to create an electrical circuit between the first electrode and the second electrode. For example, in a circuit comprising first and second electrodes, the modification may include flowing molten metal through the electrodes to allow an electrical current to flow therebetween.

另外,提供用於產生電漿(其可用於本文中所描述之發電系統中)之系統。此等系統可包含: a)  一熔融金屬噴射器系統,其經結構設計以自一金屬儲集器產生一熔融金屬流; b)  一電極系統,其用於誘發一電流流過該熔融金屬流; c)  (i)噴水系統,其經結構設計以使計量體積之水與該熔融金屬接觸,其中該水的一部分及該熔融金屬之一部分發生反應以形成該金屬之氧化物及氫氣,(ii)過量氫氣與氧氣之一混合物,及(iii)過量氫氣與水蒸汽之一混合物中的至少一者,及 d)  一電源供應器,其經結構設計以供應該電流; 其中當經由該金屬流供應電流時產生該電漿。在一些實施例中,系統可進一步包含: 一泵抽系統,其經結構設計以將在該電漿之該產生之後收集的金屬傳遞至該金屬儲集器。在一些實施例中,系統可包含: 一金屬再生系統,其經結構設計以收集該金屬氧化物且將該金屬氧化物轉換為該金屬;其中該金屬再生系統包含一陽極、一陰極、電解質;其中一電偏壓係供應於該陽極與陰極之間以將該金屬氧化物轉換為該金屬。在某些實施中,系統可包含: a)  一泵抽系統,其經結構設計以將在該電漿之該產生之後收集的金屬傳遞至該金屬儲集器;及 b)  一金屬再生系統,其經結構設計以收集該金屬氧化物且將該金屬氧化物轉換為該金屬;其中該金屬再生系統包含一陽極、一陰極、電解質;其中一電偏壓係供應於該陽極與陰極之間以將該金屬氧化物轉換為該金屬; 其中在該金屬再生系統中再生之金屬經傳遞至該泵抽系統。在某些實施中,金屬為鎵、銀或其組合。在一些實施例中,電解質為鹼金屬氫氧化物(例如,氫氧化鈉、氫氧化鉀)。Additionally, systems for generating plasma that can be used in the power generation systems described herein are provided. Such systems may include: a) a molten metal injector system structured to produce a stream of molten metal from a metal reservoir; b) an electrode system for inducing a current to flow through the molten metal flow; c) (i) a water spray system constructed to contact a metered volume of water with the molten metal, wherein a portion of the water and a portion of the molten metal react to form oxides of the metal and hydrogen gas, (ii) at least one of a mixture of excess hydrogen and oxygen, and (iii) a mixture of excess hydrogen and water vapor, and d) a power supply configured to supply the current; wherein the plasma is generated when current is supplied via the metal flow. In some embodiments, the system may further comprise: A pumping system structured to deliver metal collected after the generation of the plasma to the metal reservoir. In some embodiments, the system may include: a metal regeneration system structured to collect the metal oxide and convert the metal oxide to the metal; wherein the metal regeneration system comprises an anode, a cathode, and an electrolyte; wherein an electrical bias is supplied to the anode and the cathode to convert the metal oxide to the metal. In some implementations, the system can include: a) a pumping system structured to deliver metal collected after the generation of the plasma to the metal reservoir; and b) a metal regeneration system structured to collect the metal oxide and convert the metal oxide to the metal; wherein the metal regeneration system comprises an anode, a cathode, an electrolyte; wherein an electrical bias is supplied at between the anode and the cathode to convert the metal oxide to the metal; Wherein the metal regenerated in the metal regeneration system is passed to the pumping system. In certain implementations, the metal is gallium, silver, or a combination thereof. In some embodiments, the electrolyte is an alkali metal hydroxide (eg, sodium hydroxide, potassium hydroxide).

本發明之用於產生電漿的系統可包含: a)  一熔融金屬噴射器系統,其經結構設計以自一金屬儲集器產生一熔融金屬流; b)  一電極系統,其用於誘發一電流流過該熔融金屬流; c)  (i)噴水系統,其經結構設計以使計量體積之水與熔融金屬接觸,其中該水的一部分及該熔融金屬之一部分發生反應以形成該金屬之氧化物及氫氣,(ii)過量氫氣與氧氣之一混合物,及(iii)過量氫氣與水蒸汽之一混合物中的至少一者,及 d)  一電源供應器,其經結構設計以供應該電流; 其中當經由該金屬流供應電流時產生該電漿。在一些實施例中,系統可進一步包含: a)  一泵抽系統,其經結構設計以將在該電漿之該產生之後收集的金屬傳遞至該金屬儲集器;及 b)  一金屬再生系統,其經結構設計以收集該金屬氧化物且將該金屬氧化物轉換為該金屬;其中該金屬再生系統包含一陽極、一陰極、電解質;其中一電偏壓係供應於該陽極與陰極之間以將該金屬氧化物轉換為該金屬; 其中在該金屬再生系統中再生之金屬經傳遞至該泵抽系統。The system for generating plasma of the present invention may include: a) a molten metal injector system structured to produce a stream of molten metal from a metal reservoir; b) an electrode system for inducing a current to flow through the molten metal flow; c) (i) a water spray system constructed to contact a metered volume of water with molten metal, wherein a portion of the water and a portion of the molten metal react to form oxides of the metal and hydrogen, (ii) excess at least one of a mixture of hydrogen and oxygen, and (iii) an excess of a mixture of hydrogen and water vapor, and d) a power supply configured to supply the current; wherein the plasma is generated when current is supplied via the metal flow. In some embodiments, the system may further comprise: a) a pumping system structured to deliver metal collected after the generation of the plasma to the metal reservoir; and b) a metal regeneration system structured to collect the metal oxide and convert the metal oxide to the metal; wherein the metal regeneration system comprises an anode, a cathode, an electrolyte; wherein an electrical bias is supplied at between the anode and the cathode to convert the metal oxide to the metal; Wherein the metal regenerated in the metal regeneration system is passed to the pumping system.

用於產生電漿之系統可包含: a) 兩個電極,其經結構設計以允許一熔融金屬在其間流動以完成一電路; b) 電源,其連接至該兩個電極以在該電路關閉時在該兩個電極間施加電流; c) 一再結合器單元(例如,輝光放電單元),其用以誘發自一氣體形成初生水及原子氫;其中該再結合器之流出物經引向該電路(例如,該熔融金屬、陽極、陰極、浸沒於一熔融金屬儲集器中之一電極); 其中當跨越該電路施加電流時,該再結合器單元之該流出物經歷一反應以產生一電漿。在一些實施例中,該系統用於自電漿產生熱。在各種實施中,系統用以自電漿產生光。Systems for generating plasma may include: a) two electrodes constructed to allow a molten metal to flow therebetween to complete an electrical circuit; b) a power supply connected to the two electrodes to apply current between the two electrodes when the circuit is closed; c) a recombiner unit (eg, glow discharge unit) for inducing formation of nascent water and atomic hydrogen from a gas; wherein the effluent of the recombiner is directed to the circuit (eg, the molten metal, anode, cathode, an electrode submerged in a molten metal reservoir); Wherein when a current is applied across the circuit, the effluent of the recombiner unit undergoes a reaction to generate a plasma. In some embodiments, the system is used to generate heat from the plasma. In various implementations, the system is used to generate light from the plasma.

本發明之系統可包含網狀網路(或為網狀網路之部分),該網狀網路包含在至少一個頻帶內傳輸及接收電磁信號的複數個電力系統傳輸器-接收器節點,該頻帶之頻率由於以短分離距離在本端定位節點之能力而可為高頻,其中頻率可在約0.1 GHz至500 GHz、1 GHz至250 GHz、1 GHz至100 GHz、1 GHz至50 GHz及1 GHz至25 GHz之至少一個範圍內。The system of the present invention may comprise a mesh network (or be part of a mesh network) comprising a plurality of power system transmitter-receiver nodes transmitting and receiving electromagnetic signals in at least one frequency band, the The frequencies of the frequency bands can be high frequencies due to the ability to locally locate nodes with short separation distances, with frequencies ranging from approximately 0.1 GHz to 500 GHz, 1 GHz to 250 GHz, 1 GHz to 100 GHz, 1 GHz to 50 GHz and In at least one range from 1 GHz to 25 GHz.

在反應產物中量測之獨特光譜特徵產生具有獨特特性之氫產物。此等氫反應產物可用於各種裝置中,本發明之各部分中。The unique spectral signature measured in the reaction product produces a hydrogen product with unique properties. These hydrogen reaction products can be used in various apparatuses, in various parts of the present invention.

本發明亦涵蓋超導量子干擾裝置(SQUID)或SQUID型電子元件,其可包含至少一種低能量氫物種

Figure 02_image129
Figure 02_image131
(或具有匹配此等物種之光譜特徵的物種),及輸入電流及輸入電壓電路以及輸出電流及輸出電壓電路中之至少一者,以進行以下操作中之至少一者:感測及改變低能量氫陰離子及分子低能量氫中之至少一者的磁鏈狀態。在一些實施例中,電路包含AC諧振電路,AC諧振電路包含射頻RLC電路。在各種實施中,SQUID或SQUID型電子元件進一步包含至少一個電磁輻射源(例如,微波、紅外、可見光或紫外輻射中之至少一者的一源),以例如在一樣品中誘發一磁場。在一些實施例中,輻射源包含雷射或微波產生器。雷射輻射可藉由透鏡或光纖以聚焦方式施加(例如,至所關注樣品)。在一些實施例中,SQUID或SQUID型電子元件進一步包含施加至低能量氫陰離子及分子低能量氫中之至少一者的磁場源。該磁場可為可調諧的。輻射源及磁場中之至少一者之此可調諧性可使得能夠選擇性且受控地達成電磁輻射源與磁場之間的諧振。SQUID或SQUID型電子元件可包含在高溫下操作之電腦邏輯閘、記憶體元件及其他電子量測或致動器裝置,諸如磁力計、感測器及開關。The present invention also encompasses superconducting quantum interference devices (SQUIDs) or SQUID-type electronic components, which may comprise at least one low-energy hydrogen species
Figure 02_image129
and
Figure 02_image131
(or species having spectral signatures matching those species), and at least one of an input current and input voltage circuit and an output current and output voltage circuit to perform at least one of the following operations: sensing and altering low energy The magnetic linkage state of at least one of a hydride ion and molecular low energy hydrogen. In some embodiments, the circuit includes an AC resonant circuit that includes a radio frequency RLC circuit. In various implementations, the SQUID or SQUID-type electronics further comprises at least one source of electromagnetic radiation (eg, a source of at least one of microwave, infrared, visible, or ultraviolet radiation) to induce a magnetic field, eg, in a sample. In some embodiments, the radiation source comprises a laser or microwave generator. Laser radiation can be applied in a focused manner (eg, to the sample of interest) through lenses or optical fibers. In some embodiments, the SQUID or SQUID-type electronic component further comprises a magnetic field source applied to at least one of low energy hydride ions and molecular low energy hydrogen. The magnetic field may be tunable. This tunability of at least one of the radiation source and the magnetic field can enable selective and controlled achievement of resonance between the electromagnetic radiation source and the magnetic field. SQUID or SQUID-type electronic components may include computer logic gates, memory elements, and other electronic measurement or actuator devices, such as magnetometers, sensors, and switches, that operate at high temperatures.

本發明之SQUID可包含:電連接至超導迴路之至少兩個約瑟夫森接面, 其中該約瑟夫森接面包含具有EPR活性之一氫物種H2 。在某些實施例中,氫物種為MOOH:H2 ,其中M為金屬(例如,Ag、Ga)。SQUID according to the present invention may comprise: at least two electrically connected to the loop of superconducting Josephson junctions, wherein the Josephson junction comprising EPR having one active hydrogen species H 2. In certain embodiments, the hydrogen species is MOOH: H 2, where M is a metal (e.g., Ag, Ga).

例如自本發明之發電系統之操作產生的本發明反應產物可用作或用於致冷劑、氣態傳熱劑及/或浮力劑,其包含分子低能量氫(例如,具有匹配分子低能量氫之光譜特徵的物種)。For example, the reaction products of the present invention resulting from operation of the power generation systems of the present invention may be used as or in refrigerants, gaseous heat transfer agents, and/or buoyants comprising molecular low energy hydrogen (eg, with matching molecular low energy hydrogen) species with spectral characteristics).

亦提供MRI氣體對比劑,其包含分子低能量氫(例如,具有匹配分子低能量氫之光譜特徵的物種)。Also provided are MRI gas contrast agents comprising molecular low energy hydrogen (eg, species having spectral signatures that match molecular low energy hydrogen).

反應產物亦可用作雷射中之激發介質。本發明涵蓋低能量氫分子氣體雷射,其可包含分子低能量氫氣體(H2 (1/p) p =2,3,4,5,…,137) (例如,具有匹配分子低能量氫之光譜特徵的物種)、包含該分子低能量氫氣體之一雷射空腔、該分子低能量氫氣體之旋轉能階之一激發源,及雷射光學件。在一些實施例中,雷射光學件包含在空腔之末端處的反射鏡,該空腔包含處於激發旋轉狀態的分子低能量氫氣體,且該等反射鏡中之一者為半透明的以允許雷射光自該空腔發射。在各種實施中,激發源包含以下中之至少一者:雷射、閃光燈、氣體放電系統(例如,輝光、微波、射頻(RF)、電感耦合RF、電容耦合RF或其他電漿放電系統)。在某些態樣中,雷射可進一步包含外部或內部場源(例如,電場或磁場之源)以使得至少一個所要分子低能量氫旋轉能階被填充,其中能階包含所要自旋軌道及磁通鏈能移中之至少一者。雷射躍遷可發生在選定旋轉狀態之反轉居量與較少填充之較低能量的群體之間。在一些實施例中,雷射空腔、光學件、激發源及外部場源經選擇以達成所要反轉居量及對所要較少填充之較低能態的受激發射。雷射可包含固體雷射介質。例如,固體雷射介質包含捕集於固體基質中之分子低能量氫,其中低能量氫分子可為自由轉子且該固體介質替換一分子低能量氫氣體雷射之氣體空腔。在某些實施中,固體鐳射介質包含以下各者中之至少一者:GaOOH:H2 (1/4)、KCl:H2 (1/4)及具有經捕集分子低能量氫之矽(例如,Si(晶體):H2 (1/4)) (或具有其光譜特徵之物種)。The reaction product can also be used as the excitation medium in the laser. The present invention encompasses low energy hydrogen molecular gas lasers, which may include molecular low energy hydrogen gas (H 2 (1/p) p = 2, 3, 4, 5, . . . , 137 ) (eg, with matching molecular low energy hydrogen Spectral characteristic species), a laser cavity comprising the molecular low-energy hydrogen gas, an excitation source for the rotational energy level of the molecular low-energy hydrogen gas, and laser optics. In some embodiments, the laser optics include mirrors at the ends of a cavity containing molecular low-energy hydrogen gas in an excited rotational state, and one of the mirrors is translucent to The laser light is allowed to emit from the cavity. In various implementations, the excitation source includes at least one of a laser, a flash lamp, a gas discharge system (eg, glow, microwave, radio frequency (RF), inductively coupled RF, capacitively coupled RF, or other plasma discharge systems). In some aspects, the laser can further include an external or internal field source (eg, a source of electric or magnetic fields) such that at least one desired molecular low energy hydrogen spin level is filled, wherein the level includes the desired spin orbit and The magnetic flux linkage can move at least one of them. Laser transitions can occur between inversion populations of selected spin states and lower-energy populations of less filling. In some embodiments, the laser cavity, optics, excitation source, and external field source are selected to achieve the desired inversion population and stimulated emission of the desired less populated lower energy states. The laser may contain a solid laser medium. For example, a solid laser medium contains molecular low energy hydrogen trapped in a solid matrix, where the low energy hydrogen molecules may be free rotors and the solid medium replaces the gas cavity of a molecular low energy hydrogen gas laser. In certain embodiments, the solid laser medium comprises the following who is at least one of: GaOOH: H 2 (1/4) , KCl: H 2 (1/4) and silicon having a low energy by the hydrogen trapping molecule ( For example, Si (crystalline): H 2 (1/4)) ( or species which have the spectral characteristics).

亦提供方法。該方法可例如產生電力或產生光,或產生電漿。在一些實施例中,方法包含: a) 對一熔融金屬進行電偏壓; b) 引導一電漿產生單元(例如,一輝光放電單元)之流出物與經偏壓熔融金屬相互作用且誘發形成一電漿。在某些實施中,該電漿產生單元之該流出物由在操作期間穿過該電漿產生單元之一氫氣(H2 )及氧氣(O2 )氣體混合物產生。Methods are also provided. The method may, for example, generate electricity or generate light, or generate plasma. In some embodiments, the method includes: a) electrically biasing a molten metal; b) directing effluent of a plasma generating cell (eg, a glow discharge cell) to interact with the biased molten metal and induce formation of a plasma. In certain embodiments, the plasma generating unit of the effluent passing through the plasma generated by one unit during the operation of the hydrogen (H 2) and oxygen (O 2) gas mixture generator.

對相關申請案之交叉參考 本申請案主張2020年2月8日申請的美國申請案第62/971,938號、2020年2月24日申請的美國申請案第62/980,959號、2020年3月20日申請的美國申請案第62/992,783號、2020年3月30日申請的美國申請案第63/001,761號、2020年4月19日申請的美國申請案第63/012,243號、2020年5月13日申請的美國申請案第63/024,487號、2020年5月28日申請的美國申請案第63/031,557號、2020年6月24日申請的美國申請案第63/043,763號、2020年7月24日申請的美國申請案第63/056,270號、2020年8月28日申請的美國申請案第63/072,076號、2020年10月1日申請的美國申請案第63/086,520號、2020年11月9日申請的美國申請案第63/111,556號、2020年12月18日申請的美國申請案第63/127,985號及2021年1月6日申請的美國申請案第63/134,537號之優先權,該等申請案中之每一者特此以全文引用之方式併入。 CROSS-REFERENCE TO RELATED APPLICATIONS This application claims US Application Serial No. 62/971,938, filed February 8, 2020, US Application Serial No. 62/980,959, filed February 24, 2020, March 20, 2020 US Application No. 62/992,783, filed March 30, 2020, US Application No. 63/012,243, filed April 19, 2020, May 2020 US Application No. 63/024,487, filed on 13, US Application No. 63/031,557, filed May 28, 2020, US Application No. 63/043,763, filed June 24, 2020, July 2020 US Application No. 63/056,270, filed on Aug. 24, US Application No. 63/072,076, filed Aug. 28, 2020, U.S. Application No. 63/086,520, filed Oct. 1, 2020, 2020 Priority of US Application Serial Nos. 63/111,556, filed on Nov. 9, 2020, and 63/134,537, filed on Dec. 18, 2020, and 63/134,537, filed on Jan. 6, 2021 rights, each of these applications is hereby incorporated by reference in its entirety.

本文中揭示發電系統及發電方法,該等系統及方法將來自涉及原子氫之反應的能量輸出轉換成電及/或熱能。此等反應可涉及釋放來自原子氫之能量以形成較低能態的催化劑系統,其中電子外殼處於相對於核較接近之位置。所釋放之功率用於發電,且另外,新型氫物種及化合物為所需產物。此等能態係由經典物理定律所預測的,且需要催化劑來接受來自氫的能量以便經歷對應能量釋放躍遷。Disclosed herein are power generation systems and power generation methods that convert energy output from reactions involving atomic hydrogen into electrical and/or thermal energy. Such reactions may involve the release of energy from atomic hydrogen to form lower energy state catalyst systems in which the electron shells are in closer proximity to the core. The power released is used to generate electricity, and in addition, novel hydrogen species and compounds are the desired products. These energy states are predicted by the classical laws of physics and require catalysts to accept energy from hydrogen in order to undergo the corresponding energy releasing transitions.

可解釋由本發明之發電系統產生之發熱反應的理論涉及能量自原子氫至某些催化劑(例如,初生水)之非輻射傳遞。經典物理學給出氫原子、氫陰離子、氫分子離子及氫分子的閉型解,且預測具有分數主量子數之對應物種。原子氫可經歷與某些物種(包括其本身)之催化反應,其可接受原子氫之位能之整數倍的能量m · 27.2 eV,其中m為整數。所預測之反應涉及諧振非輻射能量自原本穩定之原子氫傳遞至能夠接受該能量之催化劑。產物為H(1/p),原子氫之分數芮得伯態,稱作「低能量氫原子」,其中在用於氫激發態之芮得伯方程式中,n = 1/2、1/3、1/4……1/p (p≤137,為整數)替換熟知參數n=整數。每一低能量氫態亦包含電子、質子及光子,但來自光子之場份額增大結合能而非減小結合能,其對應於能量解吸而非吸收。因為原子氫之位能為27.2 eV,所以mH 原子充當另外第(m + 1)個H原子之具有m • 27.2eV 催化劑[R. Mills,The Grand Unified Theory of Classical Physics ;2016年9月版,在https://brilliantlightpower.com/book-download-and-streaming/發佈(「Mills GUTCP」)]。例如,H原子可藉由經由跨空間能量傳遞(諸如藉由磁或所感應之電偶極-偶極耦合)自另一個H接受27.2 eV而充當其催化劑,從而形成隨連續譜帶之發射衰變之中間物,其具有短波長截止及能量

Figure 02_image177
。除了原子H之外,自原子H接受
Figure 02_image179
之分子亦可充當催化劑,其中該分子之位能之量值減少相同能量。H2 O之位能為81.6 eV。接著,藉由相同機制,預測藉由金屬氧化物之熱力學有利的還原形成之初生H2 O分子(並非以固態、液態或氣態鍵合之氫)充當催化劑,以形成釋放204 eV能量(包含81.6 eV傳遞至HOH)及釋放在10.1 nm處具有截止之連續輻射(122.4 eV)的
Figure 02_image181
。The theory that can explain the exothermic reaction produced by the power generation system of the present invention involves the nonradiative transfer of energy from atomic hydrogen to certain catalysts (eg, nascent water). Classical physics gives closed-form solutions for hydrogen atoms, hydride ions, hydrogen molecular ions, and hydrogen molecules, and predicts corresponding species with fractional principal quantum numbers. Atomic hydrogen can undergo catalytic reactions with certain species, including itself, that can accept an energy m·27.2 eV, where m is an integer, that is an integer multiple of the potential energy of atomic hydrogen. The predicted reaction involves the transfer of resonant nonradiative energy from otherwise stable atomic hydrogen to a catalyst capable of accepting the energy. The product is H(1/p), the fractional Radberg state of atomic hydrogen, called "low energy hydrogen atom", where n = 1/2, 1/3 in the Radberg equation for hydrogen excited states , 1/4...1/p (p≤137, an integer) replaces the well-known parameter n=integer. Each low energy hydrogen state also contains electrons, protons, and photons, but the field share from photons increases the binding energy rather than decreases it, which corresponds to energy desorption rather than absorption. Since atomic hydrogen has a potential energy of 27.2 eV, m H atoms act as catalysts with m • 27.2 eV for an additional (m + 1)th H atom [R. Mills, The Grand Unified Theory of Classical Physics ; September 2016 version, published at https://brilliantlightpower.com/book-download-and-streaming/ ("Mills GUTCP")]. For example, an H atom can act as its catalyst by accepting 27.2 eV from another H via energy transfer across space, such as by magnetism or induced electric dipole-dipole coupling, resulting in an emission decay with a continuum of bands intermediate, which has a short wavelength cut-off and energy
Figure 02_image177
. In addition to atomic H, accept from atomic H
Figure 02_image179
The molecule can also act as a catalyst, in which the magnitude of the potential energy of the molecule is reduced by the same amount of energy. The potential energy of H 2 O is 81.6 eV. Subsequently, by the same mechanism, the predicted primary H 2 O molecules (not in solid, liquid or gaseous bonding of hydrogen) by formation of the thermodynamically favorable reduction of the metal oxide acts as a catalyst, to form the release of energy 204 eV (comprising 81.6 eV transfer to HOH) and release of continuous radiation (122.4 eV) with cutoff at 10.1 nm
Figure 02_image181
.

在涉及躍遷至

Figure 02_image183
態之H 原子催化劑反應中,mH 原子充當另外第(m +1)個H 原子之具有m · 27.2eV 之催化劑。則,m 個原子藉以自第(m +1)個氫原子以諧振及非輻射方式接受m · 27.2eV ,使得mH 充當催化劑之m +1個氫原子之間的反應藉由以下給出:
Figure 02_image185
Figure 02_image187
in relation to the jump to
Figure 02_image183
In the H atom catalyst reaction in the state of 1, m H atoms act as a catalyst with m · 27.2 eV for the other (m + 1)th H atom. Then, m atoms receive m · 27.2 eV resonantly and nonradiatively from the ( m + 1)th hydrogen atom, so that the reaction between m + 1 hydrogen atoms with m H acting as catalyst is given by :
Figure 02_image185
Figure 02_image187

且,總反應為

Figure 02_image189
And, the overall reaction is
Figure 02_image189

關於初生H2 O之位能的催化反應

Figure 02_image191
[R. Mills,The Grand Unified Theory of Classical Physics ;2016年9月版,在https://brilliantlightpower.com/book-download-and-streaming/發佈]為
Figure 02_image193
Catalytic Reaction of Potential Energy of Primary H 2 O
Figure 02_image191
[R. Mills, The Grand Unified Theory of Classical Physics ; September 2016 edition, published at https://brilliantlightpower.com/book-download-and-streaming/] is
Figure 02_image193

且,總反應為

Figure 02_image195
And, the overall reaction is
Figure 02_image195

在能量傳遞至催化劑(方程式(1)及(5))之後,形成具有H原子半徑及為質子中心場之m + 1倍的中心場的中間物

Figure 02_image197
。預測半徑隨著電子經歷徑向加速度而減小,直至半徑為未催化氫原子之半徑的1/(m + 1)的穩定狀態,且釋放出
Figure 02_image199
能量。預測由於
Figure 02_image197
中間物(例如,方程式(2)及方程式(6))之遠紫外連續輻射譜帶具有短波長截止及藉由以下給出之能量
Figure 02_image202
Figure 02_image204
且延伸至比對應截止長之波長。此處,由於H*[aH /4]中間物之衰減而引起之遠紫外連續輻射譜帶經預測為在 E = m2 ·13.6 = 9·13.6 = 122.4 eV (10.1 nm)處具有短波長截止[其中在方程式(9)中, p = m + 1 = 4且m = 3]並延伸至較長波長。觀測到10.1 nm處之連續輻射譜帶,且對於理論上預測之H至較低能量(所謂的「低能量氫」狀態H(1/4))之躍遷到達較長波長,其僅由包含一些氫之脈衝捏縮氣體放電引起。藉由方程式(1)及(5)預測之另一觀測結果為自快H+ 之再結合形成快速激發態H原子。該等快原子產生展寬之巴耳麥
Figure 02_image206
發射。揭露了在某些混合氫電漿中具有異常高的動能能量氫原子之居量的大於50 eV之巴耳麥
Figure 02_image206
線展寬係一種熟知現象,其中其原因係由於在低能量氫之形成中所釋放的能量。先前在連續發射氫捏縮電漿中觀測到快H。After energy transfer to the catalyst (equations (1) and (5)), an intermediate with H atomic radius and a central field m + 1 times the proton central field is formed
Figure 02_image197
. The radius is predicted to decrease as the electron undergoes radial acceleration, until a steady state with a radius of 1/(m + 1) of the radius of the uncatalyzed hydrogen atom, and releases
Figure 02_image199
energy. forecast due to
Figure 02_image197
The far ultraviolet continuum bands of intermediates (eg, equations (2) and (6)) have short wavelength cutoffs and energies given by
Figure 02_image202
:
Figure 02_image204
and extends to a wavelength longer than the corresponding cutoff. Here, the EUV continuum band due to attenuation of the H*[aH /4] intermediate is predicted to have a short wavelength at E = m 2 ·13.6 = 9 ·13.6 = 122.4 eV (10.1 nm) Cutoff [where in equation (9), p = m + 1 = 4 and m = 3] and extends to longer wavelengths. A continuous emission band at 10.1 nm was observed, and for the theoretically predicted transition of H to lower energy (the so-called "low-energy hydrogen" state H(1/4)) to longer wavelengths, it is only determined by including some Hydrogen pulses are caused by pinching gas discharges. Another observation predicted by equations (1) and (5) is the formation of fast excited H atoms from the recombination of fast H+. These fast atoms produce a broadened barmy
Figure 02_image206
emission. Balmers greater than 50 eV with unusually high kinetic energy hydrogen atomic populations in certain mixed hydrogen plasmas are disclosed
Figure 02_image206
Line broadening is a well known phenomenon, the cause of which is due to the energy released in the formation of low energy hydrogen. Fast H was previously observed in continuous emitting hydrogen pinch plasmas.

形成低能量氫之額外催化劑及反應係可能的。基於已知電子能級可識別的具體物種(例如,He+ 、Ar+ 、Sr+ 、K、Li、HCl及NaH、OH、SH、SeH、初生H2 O、nH (n=整數))需要與原子氫一起存在以催化該過程。該反應涉及非輻射能量傳遞,接著為

Figure 02_image209
連續發射或
Figure 02_image209
傳遞至H以形成極熱的激發態H及氫原子,其能量低於對應於分數主量子數的未反應原子氫。亦即,在氫原子之主能級之式中:
Figure 02_image212
其中
Figure 02_image214
為氫原子之波爾半徑(52.947 pm),
Figure 02_image216
為電子電荷之量值,且
Figure 02_image218
為真空電容率,分數量子數:
Figure 02_image220
;其中
Figure 02_image222
為整數                             (12) 替換氫激發態之芮得伯方程式中之熟知參數n=整數且表示稱為「低能量氫」之較低能態氫原子。氫之
Figure 02_image224
狀態及氫之
Figure 02_image226
狀態為非輻射的,但兩種非輻射狀態之間的躍遷,比如
Figure 02_image228
Figure 02_image230
,係可能經由非輻射能量傳遞發生的。氫為由方程式(10)及(12)給出之穩定狀態的特例,其中氫或低能量氫原子之對應半徑係由以下給出:
Figure 02_image232
,                                                                 (13) 其中
Figure 02_image234
。為使能量守恆,能量必須以處於正常
Figure 02_image236
狀態之氫原子的位能之整數為單位自氫原子傳遞至催化劑,且半徑躍遷至
Figure 02_image238
。藉由使普通氫原子與具有以下之反應淨焓之合適的催化劑反應而形成低能量氫:
Figure 02_image240
(14) 其中m 為整數。據信,隨著反應淨焓更緊密地匹配
Figure 02_image240
,催化之速率增大。已發現,反應淨焓在
Figure 02_image240
之±10%,較佳為±5%內之催化劑適於大多數應用。Additional catalysts and reactions to form low energy hydrogen are possible. Specific species identifiable based on known electron energy levels (eg, He + , Ar + , Sr + , K, Li, HCl, and NaH, OH, SH, SeH, nascent H 2 O, nH (n=integer)) require Present with atomic hydrogen to catalyze the process. The reaction involves nonradiative energy transfer, followed by
Figure 02_image209
continuous firing or
Figure 02_image209
Transfer to H to form extremely hot excited state H and hydrogen atoms with lower energies than unreacted atomic hydrogen corresponding to fractional principal quantum numbers. That is, in the formula for the principal energy level of the hydrogen atom:
Figure 02_image212
in
Figure 02_image214
is the Bohr radius of the hydrogen atom (52.947 pm),
Figure 02_image216
is the magnitude of the electron charge, and
Figure 02_image218
is the vacuum permittivity, fractional quantum number:
Figure 02_image220
;in
Figure 02_image222
Substitute the integer (12) for the well-known parameter n=integer in the Radberg equation for the excited state of hydrogen and represents a lower energy state hydrogen atom called "low energy hydrogen". of hydrogen
Figure 02_image224
state and hydrogen
Figure 02_image226
states are nonradiative, but transitions between two nonradiative states, such as
Figure 02_image228
to
Figure 02_image230
, which may occur via nonradiative energy transfer. Hydrogen is a special case of the stable state given by equations (10) and (12), where the corresponding radii of hydrogen or low-energy hydrogen atoms are given by:
Figure 02_image232
, (13) where
Figure 02_image234
. For energy to be conserved, energy must be in normal
Figure 02_image236
The integer of the potential energy of the hydrogen atom in the state is transferred from the hydrogen atom to the catalyst, and the radius transitions to
Figure 02_image238
. Low energy hydrogen is formed by reacting ordinary hydrogen atoms with a suitable catalyst having the following net enthalpy of reaction:
Figure 02_image240
(14) where m is an integer. It is believed that as the net enthalpy of the reaction is more closely matched
Figure 02_image240
, the rate of catalysis increases. It has been found that the net enthalpy of the reaction is
Figure 02_image240
Catalysts within ±10%, preferably within ±5%, are suitable for most applications.

催化劑反應涉及兩步能量釋放:非輻射能量傳遞至催化劑,接著隨著半徑減小,進行額外能量釋放,直至對應的穩定最終狀態。因此,藉由以下給出總體反應:

Figure 02_image244
總反應為
Figure 02_image246
qrmp 為整數。
Figure 02_image248
具有氫原子之半徑(對應於分母中之1)及等於質子之中心場的
Figure 02_image250
倍的中心場,且
Figure 02_image252
係半徑為H
Figure 02_image254
的對應穩態。The catalyst reaction involves two steps of energy release: non-radiative energy transfer to the catalyst, followed by additional energy release as the radius decreases, until the corresponding stable final state. Therefore, the overall response is given by:
Figure 02_image244
The overall response is
Figure 02_image246
q , r , m and p are integers.
Figure 02_image248
has the radius of the hydrogen atom (corresponding to 1 in the denominator) and is equal to the central field of the proton
Figure 02_image250
times the center field, and
Figure 02_image252
The radius of the system is H
Figure 02_image254
the corresponding steady state.

催化劑產物

Figure 02_image256
亦可與電子反應,以形成低能量氫氫陰離子
Figure 02_image258
,或兩個
Figure 02_image256
可發生反應,以形成對應分子低能量氫
Figure 02_image261
。具體而言,催化劑產物
Figure 02_image256
亦可與電子反應,以形成具有結合能
Figure 02_image264
之新穎氫陰離子
Figure 02_image258
Figure 02_image267
其中p = 整數 > 1,
Figure 02_image269
Figure 02_image271
為普朗克常量項(Planck's constant bar),
Figure 02_image273
為真空之磁導率,
Figure 02_image275
為電子之質量,
Figure 02_image277
為由
Figure 02_image279
給出之約化之電子質量,其中
Figure 02_image281
為質子之質量,
Figure 02_image283
為波爾半徑,且離子半徑為
Figure 02_image285
。根據方程式(19),經計算之氫陰離子之電離能量為
Figure 02_image287
,且實驗值為
Figure 02_image289
(0.75418 eV)。低能量氫氫陰離子之結合能可藉由X射線光電子光譜分析(XPS)量測。catalyst product
Figure 02_image256
Can also react with electrons to form low-energy hydrino hydride ions
Figure 02_image258
, or both
Figure 02_image256
Can react to form the corresponding molecular low energy hydrogen
Figure 02_image261
. Specifically, the catalyst product
Figure 02_image256
can also react with electrons to form binding energy
Figure 02_image264
novel hydride ion
Figure 02_image258
:
Figure 02_image267
where p = integer > 1,
Figure 02_image269
,
Figure 02_image271
is Planck's constant bar,
Figure 02_image273
is the magnetic permeability of vacuum,
Figure 02_image275
is the mass of electrons,
Figure 02_image277
reason
Figure 02_image279
is given by the reduced electron mass, where
Figure 02_image281
is the mass of the proton,
Figure 02_image283
is the Bohr radius, and the ionic radius is
Figure 02_image285
. According to equation (19), the calculated ionization energy of the hydride ion is
Figure 02_image287
, and the experimental value is
Figure 02_image289
(0.75418 eV). The binding energy of low energy hydrino hydride ions can be measured by X-ray photoelectron spectroscopy (XPS).

往高磁場位移之NMR峰係存在相對於普通氫陰離子半徑減小且質子之反磁性屏蔽增大的較低能態氫的直接證據。藉由兩個電子之反磁性及量值為p之光子場的作用之總和給出位移(Mills GUTCP方程式(7.87)):

Figure 02_image291
其中第一項適用於
Figure 02_image293
,其中對於
Figure 02_image295
Figure 02_image297
p =整數 >1,且
Figure 02_image299
為精細結構常量。所預測之低能量氫氫陰離子峰相對於普通氫陰離子異常地往高磁場位移。在實施例中,峰為TMS的高磁場。相對於TMS之NMR位移可大於對於單獨或包含化合物之普通H- 、H、H2 或H+ 中之至少一者已知的NMR位移。該位移可大於以下中之至少一者:0、-1、-2、-3、-4、-5、-6、-7、-8、-9、-10、-11、-12、-13、-14、-15、-16、-17、-18、-19、-20、-21、-22、-23、-24、-25、-26、-27、-28、-29、-30、-31、-32、-33、-34、-35、-36、-37、-38、-39及-40 ppm。相對於裸質子之絕對位移之範圍(其中TMS之位移相對於裸質子為約-31.5)可為-(p29.9 + p2 2.74) ppm (方程式(20)),其約在以下中之至少一者中的範圍內:±5 ppm、±10 ppm、±20 ppm、±30 ppm、±40 ppm、±50 ppm、±60 ppm、±70 ppm、±80 ppm、±90 ppm及±100 ppm。相對於裸質子之絕對位移之範圍可為-(p29.9 + p2 1.59 × 10- 3 ) ppm (方程式(20)),其約在以下中之至少一者中的範圍內:約0.1%至99%、1%至50%及1%至10%。在另一實施例中,低能量氫物種(諸如,低能量氫原子、氫陰離子或分子)在固體基質(諸如,如NaOH或KOH之氫氧化物基質)中之存在引起基質質子往高磁場位移。基質質子(諸如NaOH或KOH之基質質子)可交換。在實施例中,位移可引起基質峰在相對於TMS的約-0.1 ppm至-5 ppm之範圍內。NMR測定可包含魔角自旋
Figure 02_image301
核磁共振光譜分析(MAS
Figure 02_image301
NMR)。The NMR peaks shifted upfield are direct evidence for the presence of lower energy hydrogen states with reduced radius relative to ordinary hydride ions and increased diamagnetic shielding of protons. The displacement is given by the sum of the diamagnetism of the two electrons and the action of a photon field of magnitude p (Mills GUTCP equation (7.87)):
Figure 02_image291
The first of which applies to
Figure 02_image293
, where for
Figure 02_image295
,
Figure 02_image297
and p = integer > 1, and
Figure 02_image299
is a fine-structure constant. The predicted low-energy hydrino hydride peaks are unusually shifted upfield relative to ordinary hydride ions. In an embodiment, the peak is the upfield of TMS. The NMR shifts relative to TMS can be greater than known NMR shifts for at least one of ordinary H − , H, H 2 or H + , alone or comprising a compound. The displacement may be greater than at least one of: 0, -1, -2, -3, -4, -5, -6, -7, -8, -9, -10, -11, -12, - 13, -14, -15, -16, -17, -18, -19, -20, -21, -22, -23, -24, -25, -26, -27, -28, -29, -30, -31, -32, -33, -34, -35, -36, -37, -38, -39 and -40 ppm. Range with respect to the absolute displacement of the bare proton (TMS wherein the relative displacement is about -31.5 bare proton) may be a - (p29.9 + p 2 2.74) ppm ( equation (20)), in which at least about or less in the Within a range of: ±5 ppm, ±10 ppm, ±20 ppm, ±30 ppm, ±40 ppm, ±50 ppm, ±60 ppm, ±70 ppm, ±80 ppm, ±90 ppm, and ±100 ppm . The absolute displacement relative to a bare proton may be in the range of -(p29.9 + p 2 1.59 × 10 - 3 ) ppm (equation (20)), which is approximately in the range of at least one of: approximately 0.1% to 99%, 1% to 50% and 1% to 10%. In another embodiment, the presence of a low energy hydrogen species (such as a low energy hydrogen atom, hydride ion or molecule) in a solid matrix (such as a hydroxide matrix such as NaOH or KOH) causes the matrix protons to be displaced upfield . Matrix protons, such as those of NaOH or KOH, are exchangeable. In embodiments, the shift may result in matrix peaks in the range of about -0.1 ppm to -5 ppm relative to TMS. NMR measurements can include magic angle spins
Figure 02_image301
Nuclear Magnetic Resonance Spectroscopy (MAS)
Figure 02_image301
NMR).

Figure 02_image304
可與質子反應且兩個
Figure 02_image304
可發生反應以分別形成
Figure 02_image307
Figure 02_image309
。在非輻射之約束下,根據橢圓座標中之拉普拉斯算子(Laplacian)來求解氫分子離子及分子電荷與電流密度函數、鍵距離以及能量。
Figure 02_image311
Figure 02_image304
reacts with protons and two
Figure 02_image304
can react to form
Figure 02_image307
and
Figure 02_image309
. Under the constraint of non-radiation, hydrogen molecular ion and molecular charge and current density functions, bond distance and energy are solved according to Laplacian in elliptic coordinates.
Figure 02_image311

在長球體分子軌道之每一焦點處具有

Figure 02_image313
之中心場的氫分子離子之總能量
Figure 02_image315
為:
Figure 02_image317
其中p 為整數,c 為真空中之光速,且
Figure 02_image319
為經約化之核質量。在長球體分子軌道之每一焦點處具有
Figure 02_image313
之中心場的氫分子之總能量為:
Figure 02_image322
At each foci of the prolate molecular orbitals have
Figure 02_image313
The total energy of hydrogen molecular ions in the central field of
Figure 02_image315
for:
Figure 02_image317
where p is an integer, c is the speed of light in vacuum, and
Figure 02_image319
is the reduced nuclear mass. At each foci of the prolate molecular orbitals have
Figure 02_image313
The total energy of hydrogen molecules in the central field is:
Figure 02_image322

氫分子

Figure 02_image324
之鍵解離能量
Figure 02_image326
係對應氫原子之總能量與
Figure 02_image328
之間的差:
Figure 02_image330
其中
Figure 02_image332
Figure 02_image334
由方程式(23-25)給出:
Figure 02_image336
hydrogen molecule
Figure 02_image324
bond dissociation energy
Figure 02_image326
is the total energy corresponding to the hydrogen atom and
Figure 02_image328
difference between:
Figure 02_image330
in
Figure 02_image332
Figure 02_image334
is given by equations (23-25):
Figure 02_image336

Figure 02_image338
可由X射線光電子光譜分析(XPS)識別,其中除了經電離電子之外的電離產物可為諸如包含兩個質子及電子(氫(H)原子、低能量氫原子、分子離子、氫分子離子及
Figure 02_image340
)之可能物中的至少一者,其中能量可因基質而位移。
Figure 02_image338
It can be identified by X-ray photoelectron spectroscopy (XPS), where ionization products other than ionized electrons can be, for example, containing two protons and electrons (hydrogen (H) atoms, low energy hydrogen atoms, molecular ions, hydrogen molecular ions, and
Figure 02_image340
), where the energy can be displaced by the matrix.

催化產物氣體之NMR提供

Figure 02_image338
之理論上預測的化學位移的決定性測試。大體而言,由於橢圓座標中之分數半徑,
Figure 02_image338
Figure 02_image344
NMR諧振經預測為自
Figure 02_image346
Figure 02_image344
NMR諧振朝向高磁場,其中電子明顯較接近原子核。藉由兩個電子之反磁性及量值為p之光子場的作用之總和給出
Figure 02_image338
之經預測位移
Figure 02_image350
(Mills GUTCP方程式(11.415-11.416)):
Figure 02_image352
其中第一項適用於H 2 ,其中對於
Figure 02_image338
p = 1且p = 整數 >1。實驗絕對
Figure 02_image346
氣相諧振位移-28.0 ppm與經預測之絕對氣相位移-28.01 ppm相符(方程式(28))。所預測之分子低能量氫的峰相對於普通H2 異常地往高磁場位移。在實施例中,峰為TMS的高磁場。相對於TMS之NMR位移可大於對於單獨或包含化合物之普通H- 、H、H2 或H+ 中之至少一者已知的NMR位移。該位移可大於以下中之至少一者:0、-1、-2、-3、-4、-5、-6、-7、-8、-9、-10、-11、-12、-13、-14、-15、-16、-17、-18、-19、-20、-21、-22、-23、-24、-25、-26、-27、-28、-29、-30、-31、-32、-33、-34、-35、-36、-37、-38、-39及-40 ppm。相對於裸質子之絕對位移之範圍(其中TMS之位移相對於裸質子為約-31.5 ppm)可為-(p28.01 + p2 2.56) ppm (方程式(28)),其約在以下中之至少一者中的範圍內:±5 ppm、±10 ppm、±20 ppm、±30 ppm、±40 ppm、±50 ppm、±60 ppm、±70 ppm、±80 ppm、±90 ppm及±100 ppm。相對於裸質子之絕對位移之範圍可為-(p28.01 + p2 1.49 × 10- 3 ) ppm (方程(28)),其約在以下中之至少一者中的範圍內:約0.1%至99%、1%至50%及1%至10%。NMR of catalytic product gas provided
Figure 02_image338
A definitive test of the theoretically predicted chemical shift. In general, due to fractional radii in elliptical coordinates,
Figure 02_image338
Of
Figure 02_image344
NMR resonances are predicted to be self-
Figure 02_image346
of
Figure 02_image344
The NMR resonances are towards the high magnetic field, where the electrons are significantly closer to the nucleus. is given by the sum of the diamagnetism of the two electrons and the action of a photon field of magnitude p
Figure 02_image338
The predicted displacement
Figure 02_image350
(Mills GUTCP equation (11.415-11.416)):
Figure 02_image352
where the first term applies to H 2 , where for
Figure 02_image338
, p = 1 and p = integer>1. Experiment absolutely
Figure 02_image346
The gas phase resonance shift of -28.0 ppm matches the predicted absolute gas phase shift of -28.01 ppm (equation (28)). The predicted molecular hydrogen with a low energy peak of 2 to abnormally high for the average displacement field H. In an embodiment, the peak is the upfield of TMS. The NMR shifts relative to TMS can be greater than known NMR shifts for at least one of ordinary H − , H, H 2 or H + , alone or comprising a compound. The displacement may be greater than at least one of: 0, -1, -2, -3, -4, -5, -6, -7, -8, -9, -10, -11, -12, - 13, -14, -15, -16, -17, -18, -19, -20, -21, -22, -23, -24, -25, -26, -27, -28, -29, -30, -31, -32, -33, -34, -35, -36, -37, -38, -39 and -40 ppm. Range with respect to the absolute displacement of the bare proton (where the displacement relative to TMS bare proton about -31.5 ppm) may be - (p28.01 + p 2 2.56) ppm ( equation (28)), which are of approximately the following Within at least one of: ±5 ppm, ±10 ppm, ±20 ppm, ±30 ppm, ±40 ppm, ±50 ppm, ±60 ppm, ±70 ppm, ±80 ppm, ±90 ppm, and ±100 ppm. Range with respect to the absolute displacement of the bare proton may be - (p28.01 + p 2 1.49 × 10 - 3) ppm ( Equation (28)), which is approximately within the at least one of the following range of: about 0.1% to 99%, 1% to 50% and 1% to 10%.

供氫型分子

Figure 02_image355
Figure 02_image357
躍遷至
Figure 02_image359
的振動能
Figure 02_image361
為:
Figure 02_image363
其中p 為整數。Hydrogen donating molecule
Figure 02_image355
since
Figure 02_image357
jump to
Figure 02_image359
vibration energy
Figure 02_image361
for:
Figure 02_image363
where p is an integer.

供氫型分子

Figure 02_image355
Figure 02_image365
躍遷至
Figure 02_image367
的旋轉能量
Figure 02_image369
為:
Figure 02_image371
其中p 為整數且I 為慣性力矩。對氣體中及捕集於固體基質中之電子束激發分子觀測到
Figure 02_image373
之振轉發射。Hydrogen donating molecule
Figure 02_image355
since
Figure 02_image365
jump to
Figure 02_image367
the rotational energy of
Figure 02_image369
for:
Figure 02_image371
where p is an integer and I is the moment of inertia. Observed for electron beam excited molecules in gases and trapped in solid matrices
Figure 02_image373
Vibration launch.

由核間隔離之逆p 相關性及對慣性力矩I 之對應影響得到旋轉能量之p2 相關性。

Figure 02_image355
之經預測核間隔離2c '為
Figure 02_image376
The inter-core isolation from the inverse correlation p and the corresponding effect on the moment of inertia I 2 to obtain the correlation energy of rotation p.
Figure 02_image355
The predicted internuclear segregation 2c ' is
Figure 02_image376

H2 (1/p)之旋轉及振動能中之至少一者可藉由電子束激發發射光譜分析、拉曼光譜分析及傅立葉變換紅外(FTIR)光譜分析中之至少一者來量測。H2 (1/p)可捕集於基質中(諸如MOH、MX及M2 CO3 (M = 鹼金屬;X = 鹵化物)基質中之至少一者中),以便進行量測。H 2 (1 / p) and the rotational energy of the vibration may be at least one excitation by an electron beam emission spectroscopy, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopic analysis of at least one of a measurement. H 2 (1/p) can be trapped in a matrix such as at least one of MOH, MX and M 2 CO 3 (M = alkali metal; X = halide) matrix for measurement.

在實施例中,觀測到作為約1950 cm- 1 處之逆拉曼效應(IRE)峰的分子低能量氫產物。藉由使用包含與支援表面增強型拉曼散射(SERS)之拉曼雷射波長相當的粗糙度特徵或粒度的導電材料來增強峰,以展示IRE峰。In an embodiment, as observed from about 1950 cm - low energy molecular hydrogen product of the inverse Raman 1 (IRE) peak. The peaks are enhanced to display the IRE peaks by using a conductive material that contains a roughness feature or particle size comparable to the wavelength of the Raman laser supporting surface-enhanced Raman scattering (SERS).

I. 催化劑 在本發明中,諸如低能量氫反應、H催化作用、H催化反應、當提及氫時的催化、形成低能量氫之氫反應及低能量氫形成反應之術語均係指諸如以下之反應:由方程式(14)定義之催化劑的方程式(15)至(18)與原子H反應以形成具有由方程式(10)及(12)給出的能級之氫狀態。當提及執行將H催化至具有由方程式(10)及(12)給出之能級的H狀態或低能量氫狀態的反應混合物時,諸如低能量氫反應物、低能量氫反應混合物、催化劑混合物、用於低能量氫形成之反應物、產生或形成低能態氫或低能量氫的反應物的對應術語亦可互換地使用。 I. Catalysts In the present invention, terms such as low energy hydrogen reaction, H catalysis, H catalysis reaction, catalysis when referring to hydrogen, hydrogen reaction to form low energy hydrogen, and low energy hydrogen forming reaction all refer to such as the following Reaction of: Equations (15) to (18) of the catalyst defined by equation (14) react with atomic H to form a hydrogen state having the energy levels given by equations (10) and (12). When referring to a reaction mixture that performs catalysis of H to the H state or low energy hydrogen state having the energy levels given by equations (10) and (12), such as low energy hydrogen reactant, low energy hydrogen reaction mixture, catalyst The corresponding terms for mixture, reactant for low energy hydrogen formation, reactant producing or forming low energy state hydrogen or low energy hydrogen are also used interchangeably.

本發明之催化性較低能量氫躍遷需要自原子H接受能量以引起躍遷的催化劑,該催化劑可呈未經催化之原子氫之位能

Figure 02_image378
的整數m 倍的吸熱化學反應的形式。吸熱催化劑反應可為自諸如原子或離子之物種電離一或多個電子(例如,對於
Figure 02_image380
Figure 02_image382
),且可進一步包含鍵斷裂與自一或多種初始鍵搭配物電離一或多個電子的協同反應(例如,對於
Figure 02_image384
Figure 02_image386
)
Figure 02_image388
因為以
Figure 02_image390
(為
Figure 02_image392
)電離,所以其滿足催化劑準則--焓變等於
Figure 02_image394
之整數倍的化學或物理過程。整數數目個氫原子亦可充當
Figure 02_image394
焓之整數倍的催化劑。催化劑能夠自原子氫接受呈約27.2 eV ± 0.5 eV及
Figure 02_image397
± 0.5 eV中之一者的整數單位的能量。The catalytic lower energy hydrogen transition of the present invention requires a catalyst that accepts energy from atomic H to cause the transition, which catalyst may be in the potential energy of uncatalyzed atomic hydrogen
Figure 02_image378
Integer m times the form of an endothermic chemical reaction. An endothermic catalyst reaction may ionize one or more electrons from a species such as an atom or ion (eg, for
Figure 02_image380
,
Figure 02_image382
), and may further comprise a coordinated reaction of bond cleavage and ionization of one or more electrons from one or more initial bond partners (e.g., for
Figure 02_image384
,
Figure 02_image386
) .
Figure 02_image388
because with
Figure 02_image390
(for
Figure 02_image392
) ionizes, so it satisfies the catalyst criterion—the enthalpy change is equal to
Figure 02_image394
A chemical or physical process that is an integer multiple. An integer number of hydrogen atoms can also act as
Figure 02_image394
Catalysts with integer multiples of enthalpy. The catalyst is capable of accepting from atomic hydrogen at about 27.2 eV ± 0.5 eV and
Figure 02_image397
Energy in integer units of one of ± 0.5 eV.

在實施例中,催化劑包含原子或離子M,其中

Figure 02_image399
個電子自原子或離子M各自電離至連續能級,使得t 個電子之電離能量的總和大約為m • 27.2eVm
Figure 02_image397
中之一者,其中m 為整數。In an embodiment, the catalyst comprises an atom or ion M, wherein
Figure 02_image399
electrons are each ionized from the atom or ion M to successive energy levels such that the sum of the ionization energies of the t electrons is approximately m • 27.2 eV and m
Figure 02_image397
One of them, where m is an integer.

在實施例中,催化劑包含雙原子分子MH,其中M-H鍵之斷裂加上

Figure 02_image399
個電子自原子M各自電離至連續能級使得
Figure 02_image399
個電子之鍵能及電離能量的總和大約為m • 27.2eVm
Figure 02_image397
中之一者,其中m 為整數。In an embodiment, the catalyst comprises a diatomic molecule MH, wherein cleavage of the MH bond plus
Figure 02_image399
electrons are each ionized from the atom M to a continuous energy level such that
Figure 02_image399
The sum of the bond energy and ionization energy of an electron is approximately m • 27.2 eV and m
Figure 02_image397
One of them, where m is an integer.

在實施例中,催化劑包含原子、離子及/或選自AlH、AsH、BaH、BiH、CdH、ClH、CoH、GeH、InH、NaH、NbH、OH、RhH、RuH、SH、SbH、SeH、SiH、SnH、SrH、TlH、

Figure 02_image405
Figure 02_image407
Figure 02_image409
Figure 02_image411
Figure 02_image413
Figure 02_image415
之分子,及以下之原子或離子:Li、Be、K、Ca、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、As、Se、Kr、Rb、Sr、Nb、Mo、Pd、Sn、Te、Cs、Ce、Pr、Sm、Gd、Dy、Pb、Pt、Kr、
Figure 02_image417
Figure 02_image419
Figure 02_image421
Figure 02_image423
Figure 02_image425
Figure 02_image427
Figure 02_image429
Figure 02_image431
Figure 02_image433
Figure 02_image435
Figure 02_image437
Figure 02_image439
Figure 02_image441
Figure 02_image443
Figure 02_image445
,以及
Figure 02_image447
Figure 02_image449
。In embodiments, the catalyst comprises atoms, ions and/or is selected from the group consisting of AlH, AsH, BaH, BiH, CdH, ClH, CoH, GeH, InH, NaH, NbH, OH, RhH, RuH, SH, SbH, SeH, SiH , SnH, SrH, TlH,
Figure 02_image405
,
Figure 02_image407
,
Figure 02_image409
,
Figure 02_image411
,
Figure 02_image413
and
Figure 02_image415
molecules, and the following atoms or ions: Li, Be, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se, Kr, Rb, Sr, Nb, Mo, Pd, Sn, Te, Cs, Ce, Pr, Sm, Gd, Dy, Pb, Pt, Kr,
Figure 02_image417
,
Figure 02_image419
,
Figure 02_image421
,
Figure 02_image423
,
Figure 02_image425
,
Figure 02_image427
,
Figure 02_image429
,
Figure 02_image431
,
Figure 02_image433
,
Figure 02_image435
,
Figure 02_image437
,
Figure 02_image439
,
Figure 02_image441
,
Figure 02_image443
and
Figure 02_image445
,as well as
Figure 02_image447
and
Figure 02_image449
.

在其他實施例中,藉由以下提供用以產生低能量氫之MH- 型氫催化劑:將電子傳遞至受體A、M-H鍵斷裂加上t 個電子自原子M各自電離至連續能級,使得包含MH與A之電子親和力(EA)之差異的電子傳遞能量、M-H鍵能及t 個電子自M電離的電離能量之總和為大約m • 27.2eV ,其中m 為整數。能夠提供大約m• 27.2 eV 之反應淨焓的MH- 型氫催化劑為OH- 、SiH- 、CoH- 、NiH- 及SeH- In other embodiments, an MH- type hydrogen catalyst for the production of low energy hydrogen is provided by electron transfer to acceptor A, MH bond breakage plus t electrons each ionized from atom M to a continuous energy level such that The sum of the electron transfer energy, the MH bond energy, and the ionization energy for ionization of t electrons from M, including the difference in electron affinity (EA) of MH and A, is approximately m • 27.2 eV , where m is an integer. MH - type hydrogen catalysts capable of providing a net enthalpy of reaction of about m• 27.2 eV are OH - , SiH - , CoH - , NiH - and SeH - .

在其他實施例中,藉由以下提供用以產生低能量氫之MH+ 型氫催化劑:自可帶負電之供體A傳遞電子、M-H鍵斷裂及

Figure 02_image399
個電子自原子M各自電離至連續能級,使得包含MH與A之電離能量之差異的電子傳遞能量、M-H鍵能及
Figure 02_image399
個電子自M電離的電離能量之總和為大約m• 27.2eV ,其中m 為整數。 In other embodiments, an MH+ type hydrogen catalyst for low energy hydrogen production is provided by: electron transfer from a negatively chargeable donor A, MH bond cleavage, and
Figure 02_image399
The electrons are each ionized from the atom M to a continuous energy level such that the electron transfer energy, the MH bond energy, and
Figure 02_image399
The sum of the ionization energies of the electrons ionized from M is approximately m• 27.2 eV , where m is an integer.

在實施例中,分子或帶正電或帶負電分子離子中之至少一者充當自原子H接受約m •27.2eV 之催化劑,其中分子或帶正電或帶負電分子離子之位能的量值減小約m •27.2eV 。例示性催化劑為H2 O、OH、醯胺基NH2 及H2 S。In an embodiment, the molecule or at least one of the positively or negatively charged molecular ion acts as a catalyst accepting about m • 27.2 eV from atomic H, where the magnitude of the potential energy of the molecule or the positively or negatively charged molecular ion is Decrease about m • 27.2 eV . Exemplary catalyst is H 2 O, OH, NH 2 acyl group and H 2 S.

O2 可充當催化劑或催化劑源。氧分子之鍵能為5.165 eV,且氧原子之第一、第二及第三電離能量分別為

Figure 02_image452
Figure 02_image454
Figure 02_image456
。反應
Figure 02_image458
Figure 02_image460
Figure 02_image462
分別提供為
Figure 02_image464
約2倍、4倍及1倍之淨焓,且包含藉由自H接受此等能量以使低能量氫形成的用以形成低能量氫的催化劑反應。O 2 can act as a catalyst or catalyst source. The bond energy of the oxygen molecule is 5.165 eV, and the first, second and third ionization energies of the oxygen atom are respectively
Figure 02_image452
,
Figure 02_image454
and
Figure 02_image456
. reaction
Figure 02_image458
,
Figure 02_image460
and
Figure 02_image462
provided separately as
Figure 02_image464
About 2 times, 4 times and 1 times the net enthalpy, and includes catalyst reactions to form low energy hydrogen by accepting such energy from H to form low energy hydrogen.

II. 低能量氫 具有由

Figure 02_image466
給出之結合能之氫原子(其中
Figure 02_image468
為大於1,較佳為2至137之整數)係本發明之H催化反應的產物。原子、離子或分子之結合能(亦被稱作電離能量)係自原子、離子或分子移除一個電子所需的能量。具有方程式(10)及(12)中給出之結合能的氫原子在下文被稱作「低能量氫原子」或「低能量氫」。具有半徑
Figure 02_image470
之低能量氫的標識為
Figure 02_image472
,其中
Figure 02_image474
為普通氫原子之半徑且
Figure 02_image476
為整數。具有半徑
Figure 02_image474
之氫原子在下文中被稱作「普通氫原子」或「正常氫原子」。普通原子氫之特徵在於其結合能為13.6 eV。 II. Low energy hydrogen has a
Figure 02_image466
The hydrogen atom of the given binding energy (where
Figure 02_image468
is greater than 1, preferably an integer from 2 to 137) is the product of the H-catalyzed reaction of the present invention. The binding energy (also known as ionization energy) of an atom, ion or molecule is the energy required to remove an electron from the atom, ion or molecule. Hydrogen atoms having the binding energies given in equations (10) and (12) are hereinafter referred to as "low energy hydrogen atoms" or "low energy hydrogen". has a radius
Figure 02_image470
The low-energy hydrogen is identified as
Figure 02_image472
,in
Figure 02_image474
is the radius of an ordinary hydrogen atom and
Figure 02_image476
is an integer. has a radius
Figure 02_image474
These hydrogen atoms are hereinafter referred to as "ordinary hydrogen atoms" or "normal hydrogen atoms". Ordinary atomic hydrogen is characterized by a binding energy of 13.6 eV.

根據本發明,提供一種具有根據方程式(19)之結合能的低能量氫氫陰離子(H- ),該結合能對於

Figure 02_image479
直至23大於且對於
Figure 02_image481
(H- )小於普通氫陰離子之結合(約0.75 eV)。對於方程式(19)之
Figure 02_image479
Figure 02_image481
,氫陰離子結合能分別為3、6.6、11.2、16.7、22.8、29.3、36.1、42.8、49.4、55.5、61.0、65.6、69.2、71.6、72.4、71.6、68.8、64.0、56.8、47.1、34.7、19.3及0.69 eV。本文亦提供包含新穎氫陰離子之例示性組合物。According to the present invention there is provided a low energy hydrino hydride ion (H ) having a binding energy according to equation (19), the binding energy for
Figure 02_image479
until 23 is greater than and for
Figure 02_image481
(H ) is less than the binding of ordinary hydride ions (about 0.75 eV). For equation (19)
Figure 02_image479
to
Figure 02_image481
, the hydride binding energies are 3, 6.6, 11.2, 16.7, 22.8, 29.3, 36.1, 42.8, 49.4, 55.5, 61.0, 65.6, 69.2, 71.6, 72.4, 71.6, 68.8, 64.0, 56.8, 47.1, 34.7, 19.3 and 0.69 eV. Exemplary compositions comprising novel hydride ions are also provided herein.

亦提供包含一或多種低能量氫氫陰離子及一或多種其他元素的例示性化合物。此類化合物被稱為「低能量氫氫化物」。Exemplary compounds comprising one or more low energy hydrino hydride ions and one or more other elements are also provided. Such compounds are called "low-energy hydrogen hydrides".

普通氫物種之特徵在於以下結合能:(a)氫陰離子,0.754 eV (「普通氫陰離子」);(b)氫原子(「普通氫原子」),13.6 eV;(c)雙原子氫分子,15.3 eV (「普通氫分子」);(d)氫分子離子,16.3 eV (「普通氫分子離子」);及(e)

Figure 02_image485
,22.6 eV (「普通三氫分子離子」)。本文中,關於氫之形式,「正常」與「普通」同義。Ordinary hydrogen species are characterized by the following binding energies: (a) a hydride ion, 0.754 eV ("ordinary hydride"); (b) a hydrogen atom ("ordinary hydrogen"), 13.6 eV; (c) a diatomic hydrogen molecule, 15.3 eV ("ordinary molecular hydrogen"); (d) molecular hydrogen ion, 16.3 eV ("ordinary molecular hydrogen ion"); and (e)
Figure 02_image485
, 22.6 eV ("ordinary trihydrogen molecular ion"). Herein, with respect to the form of hydrogen, "normal" and "ordinary" are synonymous.

根據本發明之另一實施例,提供一種化合物,其包含至少一種結合能增大的氫物種,諸如:(a)氫原子,其具有約

Figure 02_image487
(諸如,在
Figure 02_image489
之約0.9倍至1.1倍的範圍內)之結合能,其中p為自2至137之整數;(b)氫陰離子(
Figure 02_image491
),其具有約結合能
Figure 02_image493
(諸如,在結合能
Figure 02_image495
之約0.9倍至1.1倍的範圍內)之結合能,其中p為自2至24之整數;(c)
Figure 02_image497
;(d)三低能量氫分子離子
Figure 02_image499
,其具有約
Figure 02_image501
(諸如,在
Figure 02_image503
之約0.9倍至1.1倍的範圍內)之結合能,其中p為自2至137之整數;(e)二低能量氫,其具有約
Figure 02_image505
(諸如,在
Figure 02_image507
的約0.9倍至1.1倍的範圍內)之結合能,其中p為自2至137之整數;(f)二低能量氫分子離子,其具有約
Figure 02_image509
(諸如在
Figure 02_image511
之約0.9倍至1.1倍的範圍內)之結合能,其中p為整數,較佳為自2至137之整數。According to another embodiment of the present invention, there is provided a compound comprising at least one increased binding energy hydrogen species, such as: (a) a hydrogen atom having about
Figure 02_image487
(such as in
Figure 02_image489
(b) hydride ions (
Figure 02_image491
), which has a binding energy of approx.
Figure 02_image493
(such as in the binding energy
Figure 02_image495
in the range of about 0.9 times to 1.1 times the binding energy), where p is an integer from 2 to 24; (c)
Figure 02_image497
; (d) three low-energy hydrogen molecular ions
Figure 02_image499
, which has about
Figure 02_image501
(such as in
Figure 02_image503
in the range of about 0.9 times to 1.1 times the binding energy, where p is an integer from 2 to 137; (e) two low-energy hydrogens having about
Figure 02_image505
(such as in
Figure 02_image507
(f) two low-energy hydrogen molecular ions, which have a
Figure 02_image509
(such as in
Figure 02_image511
in the range of about 0.9 times to 1.1 times the binding energy), wherein p is an integer, preferably an integer from 2 to 137.

根據本發明之另一實施例,提供一種化合物,其包含至少一種結合能增大之氫物種,諸如:(a)二低能量氫分子離子,其具有約

Figure 02_image513
, 諸如在
Figure 02_image515
之約0.9倍至1.1倍的範圍內之總能量,其中p 為整數,
Figure 02_image517
為普朗克常量項,
Figure 02_image519
為電子之質量,
Figure 02_image521
為真空中之光速,且
Figure 02_image523
為經約化之核質量,及(b)二低能量氫分子,其具有約
Figure 02_image525
, 諸如在
Figure 02_image527
之約0.9倍至1.1倍的範圍內之總能量,其中p 為整數且
Figure 02_image529
為波爾半徑。According to another embodiment of the present invention, there is provided a compound comprising at least one increased binding energy hydrogen species, such as: (a) two low energy hydrogen molecular ions having about
Figure 02_image513
, such as in
Figure 02_image515
total energy in the range from about 0.9 times to 1.1 times, where p is an integer,
Figure 02_image517
is the Planck constant term,
Figure 02_image519
is the mass of electrons,
Figure 02_image521
is the speed of light in vacuum, and
Figure 02_image523
is the reduced nuclear mass, and (b) two low-energy hydrogen molecules with approximately
Figure 02_image525
, such as in
Figure 02_image527
total energy in the range of about 0.9 times to 1.1 times, where p is an integer and
Figure 02_image529
is the Bohr radius.

根據本發明之一個實施例(其中化合物包含帶負電之結合能增大的氫物種),該化合物進一步包含一或多種陽離子,諸如質子、普通

Figure 02_image531
或普通
Figure 02_image533
。According to one embodiment of the invention wherein the compound comprises a negatively charged increased binding energy hydrogen species, the compound further comprises one or more cations, such as protons, ordinary
Figure 02_image531
or ordinary
Figure 02_image533
.

本文中提供一種用於製備包含至少一種低能量氫氫陰離子之化合物的方法。此類化合物在下文被稱作「低能量氫氫化物」。該方法包含使原子氫與反應淨焓為約

Figure 02_image535
之催化劑反應,其中m為大於1之整數,較佳為小於400之整數,從而產生結合能為約
Figure 02_image537
之結合能增大的氫原子,其中p 為整數,較佳為自2至137的整數。另一催化產物為能量。結合能增大之氫原子可與電子源反應以產生結合能增大之氫陰離子。結合能增大之氫陰離子可與一或多種陽離子反應以產生包含至少一種結合能增大之氫陰離子的化合物。Provided herein is a method for preparing a compound comprising at least one low energy hydrino hydride ion. Such compounds are hereinafter referred to as "low energy hydrogen hydrides". The method involves making atomic hydrogen and the net enthalpy of the reaction about
Figure 02_image535
where m is an integer greater than 1, preferably an integer less than 400, resulting in a binding energy of about
Figure 02_image537
The hydrogen atom with increased binding energy, wherein p is an integer, preferably an integer from 2 to 137. Another catalytic product is energy. An increased binding energy hydrogen atom can react with an electron source to produce an increased binding energy hydride ion. The increased binding energy hydride ion can react with one or more cations to produce a compound comprising at least one increased binding energy hydride ion.

在實施例中,極高功率及能量中之至少一者可藉由氫在本文中被稱作歧化之過程中經歷至具有方程式(18)中之高p值的低能量氫的躍遷而達成,如Mills GUT Chp. 5中所給出,其以引用之方式併入。氫原子

Figure 02_image539
可經歷由方程式(10)及(12)所給出之至較低能態的進一步躍遷,其中一個原子之躍遷係藉由以諧振及非輻射方式接受
Figure 02_image541
且伴隨有其位能之相反變化的另一個原子來催化。由方程式(32)給定之
Figure 02_image543
諧振傳遞至
Figure 02_image545
誘發的
Figure 02_image547
Figure 02_image549
之躍遷的總體通用方程式藉由以下表示:
Figure 02_image551
In an embodiment, at least one of extremely high power and energy may be achieved by hydrogen undergoing a transition to low energy hydrogen having a high p value in equation (18) in a process referred to herein as disproportionation, As given in Mills GUT Chp. 5, which is incorporated by reference. A hydrogen atom
Figure 02_image539
can undergo further transitions to lower energy states given by equations (10) and (12), where one atom's transition is obtained by accepting in a resonant and nonradiative manner
Figure 02_image541
And accompanied by another atom with the opposite change of its potential energy to catalyze. is given by equation (32)
Figure 02_image543
The resonance is transmitted to
Figure 02_image545
induced
Figure 02_image547
to
Figure 02_image549
The overall general equation for the transition of is expressed by:
Figure 02_image551

來自低能量氫過程之EUV光可解離二低能量氫分子且所得低能量氫原子可充當催化劑以躍遷至較低能態。例示性反應包含藉由H(1/4)將H催化為H(1/17),其中H(1/4)可為藉由HOH對另一H進行催化的反應產物。預測低能量氫之歧化反應產生X射線區中之特徵。如由方程式(5)至(8)所示,HOH催化劑之反應產物為

Figure 02_image553
。考慮在包含H2 O氣體之氫雲中很可能有躍遷反應,其中第一氫型原子
Figure 02_image555
為H原子,且充當催化劑之第二受體氫型原子
Figure 02_image557
Figure 02_image559
。因為
Figure 02_image559
之位能為
Figure 02_image562
,所以躍遷反應藉由以下表示:
Figure 02_image564
EUV light from the low energy hydrogen process can dissociate two low energy hydrogen molecules and the resulting low energy hydrogen atoms can act as catalysts to transition to lower energy states. Exemplary reactions include the catalysis of H by H(1/4) to H(1/17), where H(1/4) can be the reaction product of another H catalyzed by HOH. Disproportionation of low energy hydrogen is predicted to produce features in the X-ray region. As shown by equations (5) to (8), the reaction product of the HOH catalyst is
Figure 02_image553
. Consider that a transition reaction is likely to occur in a hydrogen cloud containing H 2 O gas, where atoms of the first hydrogen type
Figure 02_image555
It is H atom and acts as the second acceptor hydrogen atom of the catalyst
Figure 02_image557
for
Figure 02_image559
. because
Figure 02_image559
The potential energy is
Figure 02_image562
, so the transition reaction is represented by:
Figure 02_image564

且,總反應為

Figure 02_image566
And, the total reaction is
Figure 02_image566

預測由於

Figure 02_image568
中間物(例如,方程式(16)及方程式(34))之遠紫外連續輻射譜帶具有短波長截止及藉由以下給出之能量
Figure 02_image570
Figure 02_image572
且延伸至比對應截止長之波長。此處,預測由於
Figure 02_image574
中間物之衰減的遠紫外連續輻射譜帶在
Figure 02_image576
Figure 02_image578
處具有短波長截止並延伸至較長波長。NASA之錢德拉X射線天文台(Chandra X-ray Observatory)及XMM-Newton [E. Bulbul、M. Markevitch、A. Foster、R. K. Smith、M. Loewenstein、S. W. Randall, 「Detection of an unidentified emission line in the stacked X-Ray spectrum of galaxy clusters」, The Astrophysical Journal, 第789卷, 第1期, (2014);A. Boyarsky、O. Ruchayskiy、D. Iakubovskyi、J. Franse, 「An unidentified line in X-ray spectra of the Andromeda galaxy and Perseus galaxy cluster」, (2014),arXiv: 1402.4119 [astro-ph.CO]]在英仙座星團中觀測到具有3.48 keV截止之寬X射線峰,其不匹配任何已知原子躍遷。BulBul等人之分配給具有未知身分之黑暗物質的3.48 keV特徵匹配
Figure 02_image580
躍遷且進一步證實低能量氫為黑暗物質之身分。forecast due to
Figure 02_image568
The far ultraviolet continuum bands of intermediates (eg, Eq. (16) and Eq. (34)) have short wavelength cutoffs and energies given by
Figure 02_image570
:
Figure 02_image572
and extends to a wavelength longer than the corresponding cutoff. Here, the prediction is due to
Figure 02_image574
The attenuated far-ultraviolet continuum band of the intermediate is at
Figure 02_image576
;
Figure 02_image578
has a short wavelength cutoff and extends to longer wavelengths. NASA's Chandra X-ray Observatory and XMM-Newton [E. Bulbul, M. Markevitch, A. Foster, RK Smith, M. Loewenstein, SW Randall, "Detection of an unidentified emission line in the stacked X-Ray spectrum of galaxy clusters”, The Astrophysical Journal, Vol. 789, No. 1, (2014); A. Boyarsky, O. Ruchayskiy, D. Iakubovskyi, J. Franse, “An unidentified line in X- ray spectra of the Andromeda galaxy and Perseus galaxy cluster”, (2014), arXiv: 1402.4119 [astro-ph.CO]] A broad X-ray peak with a 3.48 keV cutoff was observed in the Perseus cluster, which did not match any known Know the atomic transition. The 3.48 keV signature match assigned to dark matter of unknown identity by BulBul et al.
Figure 02_image580
The transition and further confirmation of low energy hydrogen as the identity of dark matter.

新穎的氫組成物質可包含: (a)至少一種具有以下結合能之中性、正或負的氫物種(在下文中為「結合能增大之氫物種」) (i)大於對應普通氫物種之結合能,或 (ii)大於任何氫物種在對應普通氫物種因為普通氫物種之結合能小於環境條件(標準溫度及壓力,STP)下之熱能或為負而不穩定或觀測不到時的結合能;及 (b)至少一種其他元素。通常,本文中所描述之氫產物為結合能增大之氫物種。Novel hydrogen constituents may include: (a) at least one hydrogen species having the following binding energy neutral, positive or negative (hereinafter "enhanced binding energy hydrogen species") (i) greater than the binding energy of the corresponding ordinary hydrogen species, or (ii) greater than the binding energy of any hydrogen species when the corresponding ordinary hydrogen species is unstable or unobservable because the binding energy of the ordinary hydrogen species is less than the thermal energy at ambient conditions (standard temperature and pressure, STP) or is negative; and (b) at least one other element. Typically, the hydrogen products described herein are increased binding energy hydrogen species.

在此上下文中,「其他元素」意謂除結合能增大之氫物種以外的元素。因此,其他元素可為普通氫物種,或除氫以外之任何元素。在一組化合物中,其他元素及結合能增大之氫物種為中性。在另一組化合物中,其他元素及結合能增大之氫物種帶電,使得其他元素提供平衡電荷以形成中性化合物。前一組化合物之特徵在於分子及配位鍵合;後一組之特徵在於離子鍵合。In this context, "other elements" means elements other than hydrogen species with increased binding energy. Thus, the other elements can be ordinary hydrogen species, or any element other than hydrogen. In a group of compounds, other elements and hydrogen species with increased binding energy are neutral. In another group of compounds, other elements and increased binding energy hydrogen species are charged such that the other elements provide a balancing charge to form neutral compounds. The former group of compounds is characterized by molecular and coordinate bonding; the latter group is characterized by ionic bonding.

亦提供新穎化合物及分子離子,其包含 (a)至少一種具有以下總能量之中性、正或負的氫物種(在下文中為「結合能增大之氫物種」) (i)大於對應普通氫物種之總能量,或 (ii)大於任何氫物種在對應普通氫物種因為普通氫物種之總能量小於環境條件下之熱能或為負而不穩定或觀測不到時的總能量;及 (b)至少一種其他元素。Also provided are novel compounds and molecular ions comprising (a) at least one hydrogen species having the following total energy neutral, positive or negative (hereinafter "enhanced binding energy hydrogen species") (i) greater than the total energy of the corresponding ordinary hydrogen species, or (ii) greater than the total energy of any hydrogen species when the corresponding ordinary hydrogen species is unstable or unobservable because the total energy of the ordinary hydrogen species is less than the thermal energy under ambient conditions or is negative; and (b) at least one other element.

氫物種之總能量為自氫物種移除所有電子的能量之總和。根據本發明之氫物種的總能量大於對應普通氫物種之總能量。根據本發明之總能量增大之氫物種亦被稱作「結合能增大之氫物種」,即使總能量增大之氫物種之一些實施例可具有比對應普通氫物種之第一電子結合能小的第一電子結合能。例如,

Figure 02_image582
之方程式(19)之氫陰離子的第一結合能小於普通氫陰離子之第一結合能,而
Figure 02_image582
之方程式(19)之氫陰離子的總能量遠遠大於對應普通氫陰離子之總能量。The total energy of the hydrogen species is the sum of the energies of all electrons removed from the hydrogen species. The total energy of the hydrogen species according to the present invention is greater than that of the corresponding ordinary hydrogen species. Increased total energy hydrogen species in accordance with the present invention are also referred to as "enhanced binding energy hydrogen species" even though some embodiments of increased total energy hydrogen species may have a first electron binding energy higher than the corresponding ordinary hydrogen species Small first electron binding energy. For example,
Figure 02_image582
The first binding energy of the hydride ion in equation (19) is smaller than the first binding energy of ordinary hydride ions, and
Figure 02_image582
The total energy of the hydride ion in equation (19) is much larger than that of the corresponding ordinary hydride ion.

本文亦提供新穎化合物及分子離子,其包含 (a)複數種具有以下結合能之中性、正或負的氫物種(在下文中為「結合能增大之氫物種」) (i)大於對應普通氫物種之結合能,或 (ii)大於任何氫物種在對應普通氫物種因為普通氫物種之結合能小於環境條件下之熱能或為負而不穩定或觀測不到時的結合能;及 (b)視情況選用之一種其他元素。本發明之化合物在下文中被稱作「結合能增大之氫化合物」。Also provided herein are novel compounds and molecular ions comprising (a) a plurality of hydrogen species having the following neutral, positive or negative binding energies (hereinafter "enhanced binding energy hydrogen species") (i) greater than the binding energy of the corresponding ordinary hydrogen species, or (ii) greater than the binding energy of any hydrogen species for which the corresponding ordinary hydrogen species is unstable or unobservable because the binding energy of the ordinary hydrogen species is less than the thermal energy at ambient conditions or is negative; and (b) one of the other elements as the case may be. The compounds of the present invention are hereinafter referred to as "enhanced binding energy hydrogen compounds".

可藉由使一或多種低能量氫原子與電子、低能量氫原子、包含該等結合能增大之氫物種中之至少一者及除結合能增大之氫物種以外的至少一種其他原子、分子或離子的化合物中之一或多者反應來形成結合能增大之氫物種。can be obtained by combining one or more low-energy hydrogen atoms with electrons, low-energy hydrogen atoms, including at least one of these increased binding energy hydrogen species and at least one other atom other than the increased binding energy hydrogen species, One or more of the molecular or ionic compounds react to form increased binding energy hydrogen species.

亦提供新穎化合物及分子離子,其包含 (a)複數種具有以下總能量之中性、正或負的氫物種(在下文中為「結合能增大之氫物種」 (i)大於普通分子氫之總能量,或 (ii)大於任何氫物種在對應普通氫物種因為普通氫物種之總能量小於環境條件下之熱能或為負而不穩定或觀測不到時的總能量;及 (b)視情況選用之一種其他元素。本發明之化合物在下文中被稱作「結合能增大之氫化合物」。Also provided are novel compounds and molecular ions comprising (a) a plurality of hydrogen species having the following total energy neutral, positive or negative (hereinafter "enhanced binding energy hydrogen species" (i) greater than the total energy of ordinary molecular hydrogen, or (ii) greater than the total energy of any hydrogen species when the corresponding ordinary hydrogen species is unstable or unobservable because the total energy of the ordinary hydrogen species is less than the thermal energy under ambient conditions or is negative; and (b) one of the other elements as the case may be. The compounds of the present invention are hereinafter referred to as "enhanced binding energy hydrogen compounds".

在實施例中,提供一種化合物,其包含至少一種選自以下之結合能增大之氫物種:(a)根據方程式(19)之結合能對於

Figure 02_image585
直至23大於且對於
Figure 02_image582
小於普通氫陰離子之結合(約0.8 eV)的氫陰離子(「結合能增大之氫陰離子」或「低能量氫氫陰離子」);(b)結合能大於普通氫原子之結合能(約13.6 eV)的氫原子(「結合能增大之氫原子」或「低能量氫」);(c)具有大於約15.3 eV之第一結合能的氫分子(「結合能增大之氫分子」或「二低能量氫」) ;或(d)具有大於約16.3 eV之結合能的分子氫離子(「結合能增大之分子氫離子」或「二低能量氫分子離子」)。在本發明中,結合能增大之氫物種及化合物亦被稱作低能氫物種及化合物。低能量氫包含結合能增大之氫物種或等同地較低能量之氫物種。In an embodiment, there is provided a compound comprising at least one increased binding energy hydrogen species selected from: (a) the binding energy according to equation (19) for
Figure 02_image585
until 23 is greater than and for
Figure 02_image582
Hydride ions ("increased binding energy hydride" or "low energy hydrino hydride") that are smaller than the binding energy of ordinary hydrogen ions (about 0.8 eV); (b) the binding energy is greater than that of ordinary hydrogen atoms (about 13.6 eV) ) hydrogen atoms ("enhanced binding energy hydrogen atoms" or "low energy hydrogen"); (c) hydrogen molecules with a first binding energy greater than about 15.3 eV ("enhanced binding energy hydrogen molecules" or "enhanced binding energy hydrogen molecules"); or (d) molecular hydrogen ions with binding energies greater than about 16.3 eV ("increased binding energy molecular hydrogen ions" or "two low energy hydrogen molecular ions"). In the present invention, hydrogen species and compounds with increased binding energy are also referred to as low-energy hydrogen species and compounds. Low energy hydrogen includes increased binding energy hydrogen species or equivalently lower energy hydrogen species.

III. 化學反應器 本發明亦係針對用於產生本發明之結合能增大之氫物種及化合物(諸如二低能量氫分子及低能量氫氫化物)的其他反應器。取決於電池類型,其他催化產物為功率以及(可選地)電漿及光。此類反應器在下文中被稱作「氫反應器」或「氫電池」。氫反應器包含用於製作低能量氫之電池。用於製作低能量氫之電池可採用以下形式:化學反應器或氣體燃料電池(諸如氣體放電電池)、電漿炬電池或微波功率電池及電化電池。在實施例中,催化劑為HOH且HOH及H中之至少一者的源為冰。冰可具有高表面積以增大自冰形成HOH催化劑及H之速率及低能量氫反應速率中之至少一者。冰可呈精細碎片形式以增大表面積。在實施例中,電池包含電弧放電電池且包含冰至少一個電極,使得放電涉及冰之至少一部分。 III. Chemical Reactors The present invention is also directed to other reactors for producing the increased binding energy hydrogen species and compounds of the present invention, such as two low energy hydrogen molecules and low energy hydrogen hydrides. Depending on the cell type, other catalytic products are power and (optionally) plasma and light. Such reactors are hereinafter referred to as "hydrogen reactors" or "hydrogen cells". Hydrogen reactors contain batteries for making low-energy hydrogen. Cells for making low energy hydrogen may take the form of chemical reactors or gas fuel cells (such as gas discharge cells), plasma torch cells or microwave power cells, and electrochemical cells. In an embodiment, the catalyst is HOH and the source of at least one of HOH and H is ice. The ice may have a high surface area to increase at least one of the rate of HOH catalyst and H formation from the ice and the rate of the low energy hydrogen reaction. The ice can be in the form of fine fragments to increase the surface area. In an embodiment, the battery comprises an arc discharge battery and comprises ice at least one electrode such that the discharge involves at least a portion of the ice.

在實施例中,電弧放電電池包含容器、兩個電極、高壓電源(諸如能夠具有在約100 V至1 MV之範圍內的電壓及在約1 A至100 kA之範圍內的電流的電源),及水源(諸如儲集器及形成並供應H2 O液滴之構件)。液滴可在電極之間傳送。在實施例中,液滴引發電弧電漿之點火。在實施例中,水電弧電漿包含可發生反應以形成低能量氫之H及HOH。可藉由控制液滴大小及將液滴供應至電極之速率來控制點火速率及對應功率比。高壓源可包含至少一個可由高壓電源充電的高壓電容器。在實施例中,電弧放電電池進一步包含諸如功率轉換器的構件,諸如本發明之功率轉換器,諸如PV轉換器及用以將來自低能量氫製程之功率(諸如光及熱)轉換成電力的熱機中之至少一者。In an embodiment, the arc discharge battery comprises a container, two electrodes, a high voltage power supply (such as a power supply capable of having a voltage in the range of about 100 V to 1 MV and a current in the range of about 1 A to 100 kA), and a water source (such as a reservoir and a supply of H 2 O and form a droplet of the member). Droplets can be transported between electrodes. In an embodiment, the droplet initiates the ignition of the arc plasma. In an embodiment, the water arc plasma includes H and HOH that can react to form low energy hydrogen. The firing rate and corresponding power ratio can be controlled by controlling the droplet size and the rate at which the droplets are supplied to the electrodes. The high voltage source may include at least one high voltage capacitor chargeable by the high voltage source. In an embodiment, the arc discharge cell further includes components such as a power converter, such as the power converter of the present invention, such as a PV converter, and a power converter to convert power (such as light and heat) from a low energy hydrogen process into electricity at least one of the heat engines.

用於製作低能量氫之電池的例示性實施例可採用以下形式:液體燃料電池、固體燃料電池、異質燃料電池、CIHT電池及SF-CIHT或SunCell®電池。此等電池中之每一者包含:(i)包括原子氫源之反應物;(ii)至少一種用於製作低能量氫之催化劑,其選自固體催化劑、熔融催化劑、液體催化劑、氣態催化劑或其混合物;及(iii)用於使氫與用於製作低能量氫之催化劑反應之容器。如本文中所使用及如本發明所預期,除非另外規定,否則術語「氫」不僅包括氕(

Figure 02_image588
),而且包括氘(
Figure 02_image590
)及氚(
Figure 02_image592
)。例示性化學反應混合物及反應器可包含本發明之SF-CIHT、CIHT或熱電池實施例。在此化學反應器區段中給出額外例示性實施例。在本發明中給出在混合物反應期間形成之用H2 O作為催化劑的反應混合物的實例。其他催化劑可用於形成結合能增大之氫物種及化合物。可在諸如反應物、反應物之wt%、H2 壓力及反應溫度之參數方面根據此等例示性情況調整反應及條件。合適的反應物、條件及參數範圍係本發明之反應物、條件及參數範圍。藉由經預測之13.6 eV之整數倍的連續輻射譜帶、由H線之多普勒線展寬所量測之在其他方面無法解釋的超高H動能、H線反轉、在無擊穿電場之情況下形成電漿及如在Mills先前公開案中所報導的不規則電漿餘暉持續時間顯示低能量氫及分子低能量氫係本發明之反應器的產物。資料(諸如關於CIHT電池及固體燃料的資料)已由其他研究人員在場外獨立驗證。由本發明之電池形成低能量氫亦藉由在較長持續時間內連續輸出之電能所證實,該等電能係電輸入之多倍,其在大多數情況下超過在無替代源情況下的輸入的10倍以上。經預測之分子低能量氫H2 (1/4)藉由以下各者而識別為CIHT電池與固體燃料之產物:MAS H NMR,其展示經預測之約-4.4 ppm之往高磁場位移之基質峰;ToF-SIMS及ESI-ToFMS,其展示H2 (1/4)與集氣劑基質複合成為m/e=M+n2峰,其中M為母離子之質量且n為整數;電子束激發發射光譜分析及光致發光發射光譜分析,其展示經預測之具有H2 能量之16倍或量子數p=4的平方倍數的H2 (1/4)的旋轉及振動光譜;拉曼及FTIR光譜分析,其展示1950 cm- 1 之H2 (1/4)的旋轉能量,其為H2 之旋轉能量之16倍或量子數p=4的平方倍數;XPS,其展示經預測之500 eV的H2 (1/4)之總結合能;及到達時間在m/e=1峰之前的ToF-SIMS峰,該m/e=1峰對應於動能約204 eV之H,其將經預測之H至H(1/4)之能量釋放與傳遞至第三體H之能量相匹配,如以下中所報導:Mills先前公開案及R. Mills X Yu、Y. Lu、G Chu、J. He、J. Lotoski的「Catalyst Induced Hydrino Transition (CIHT) Electrochemical Cell」,International Journal of Energy Research, (2013)以及R. Mills、J. Lotoski、J. Kong、G Chu、J. He、J. Trevey的「High-Power-Density Catalyst Induced Hydrino Transition (CIHT) Electrochemical Cell」(2014),其以全文引用之方式併入本文中。Exemplary embodiments of cells for making low energy hydrogen may take the form of liquid fuel cells, solid fuel cells, heterogeneous fuel cells, CIHT cells, and SF-CIHT or SunCell® cells. Each of these cells comprises: (i) reactants including a source of atomic hydrogen; (ii) at least one catalyst for making low energy hydrogen selected from a solid catalyst, a molten catalyst, a liquid catalyst, a gaseous catalyst or a mixture thereof; and (iii) a vessel for reacting hydrogen with a catalyst for making low energy hydrogen. As used herein and as contemplated by the present invention, unless otherwise specified, the term "hydrogen" includes not only protium (
Figure 02_image588
), but also includes deuterium (
Figure 02_image590
) and tritium (
Figure 02_image592
). Exemplary chemical reaction mixtures and reactors may include SF-CIHT, CIHT, or thermal cell embodiments of the present invention. Additional illustrative examples are given in this chemical reactor section. In the present invention, are given by H 2 O formed in the examples of the reaction mixture during the catalyst reaction mixture. Other catalysts can be used to form increased binding energy hydrogen species and compounds. Such as the reaction product may be, wt% of the reactants, the reaction pressure and the H 2 parameters of temperature and adjusting the reaction conditions in accordance with aspects of these exemplary cases. Suitable reactants, conditions and parameter ranges are those of the present invention. The otherwise unexplainable H kinetic energy measured by the Doppler line broadening of the H-line, the H-line inversion, in the non-breakdown field The formation of plasma under these conditions and the irregular plasma afterglow duration as reported in Mills' previous publications indicate that low energy hydrogen and molecular low energy hydrogen are the products of the reactor of the present invention. Data, such as those on CIHT cells and solid fuels, have been independently verified off-site by other researchers. The formation of low-energy hydrogen by the cells of the present invention is also demonstrated by the continuous output of electrical energy over a longer duration, which is a multiple of the electrical input, which in most cases exceeds that of the input without an alternative source. 10 times or more. Low energy predicted by molecular hydrogen H 2 (1/4) were identified by the following product as a solid fuel cell and the CIHT: MAS H NMR, showing -4.4 ppm to the matrix of the predicted displacement of the high magnetic field of approximately Peaks; ToF-SIMS and ESI-ToFMS, which show H 2 (1/4) complexed with the gas getter matrix to form a m/e=M+n2 peak, where M is the mass of the parent ion and n is an integer; electron beam excitation emission spectroscopy and photoluminescence emission spectroscopy, which shows the predicted energies of H 2 with H 2 (1/4) of the rotational vibration spectrum and the square or 16 times a multiple quantum number p = 4; and Raman and FTIR spectroscopy, showing 1950 cm - 1 of H 2 (1/4) of the rotational energy, which is a multiple of the square of the energy of the H 2 rotates 16 times or the quantum number p = 4; the XPS, which shows the predicted 500 eV The total binding energy of H 2 (1/4) of The energy release of H to H(1/4) matches the energy transfer to the third body H, as reported in: Mills previous publications and R. Mills X Yu, Y. Lu, G Chu, J. He, J. Lotoski, "Catalyst Induced Hydrino Transition (CIHT) Electrochemical Cell," International Journal of Energy Research, (2013) and R. Mills, J. Lotoski, J. Kong, G Chu, J. He, J. Trevey "High-Power-Density Catalyst Induced Hydrino Transition (CIHT) Electrochemical Cell" (2014), which is incorporated herein by reference in its entirety.

使用水流量熱計及Setaram DSC 131差示掃描量熱計(DSC)兩者,藉由觀測到來自形成低能量氫之固體燃料的超過最大理論能量60倍的熱能,證實藉由本發明之電池(諸如包含用以產生熱功率之固體燃料之電池)形成低能量氫。MAS H NMR展示出約-4.4 ppm之經預測H2 (1/4)高磁場基質位移。始於1950 cm-1 之拉曼峰匹配H2 (1/4)之自由空間旋轉能量(0.2414 eV)。此等結果報導於Mills先前公開案及R. Mills、J. Lotoski、W. Good、J. He的「Solid Fuels that Form HOH Catalyst」(2014)中,其以全文引用之方式併入本文中。Using both a water flow calorimeter and a Setaram DSC 131 Differential Scanning Calorimeter (DSC), it was confirmed by the observation of thermal energy from solid fuels forming low energy hydrogen in excess of 60 times the maximum theoretical energy. Low energy hydrogen, such as cells containing solid fuel to generate thermal power, forms. MAS H NMR show predicted H 2 (1/4) upfield shift of approximately -4.4 ppm of the matrix. Starts 1950 cm -1 Raman peak matching of H 2 (1/4) of the rotational energy of the free space (0.2414 eV). These results are reported in previous publications by Mills and in "Solid Fuels that Form HOH Catalyst" by R. Mills, J. Lotoski, W. Good, J. He (2014), which are incorporated herein by reference in their entirety.

IV.SunCell 及功率轉換器 產生電能及熱能中之至少一者的電力系統(在本文中亦被稱作「SunCell」)可包含: 容器,其能夠保持低於大氣壓之壓力; 反應物,其能夠經歷產生足夠能量以在容器中形成電漿之反應,該等反應物包含: a)   氫氣與氧氣之混合物,及/或 水蒸汽,及/或 氫氣與水蒸汽之混合物; b)   熔融金屬; 質量流量控制器,其用以控制至少一種反應物至容器中之流動速率; 真空泵,其用以在一或多種反應物流入容器中時將容器中之壓力保持為低於大氣壓力; 熔融金屬噴射器系統,其包含至少一個包含熔融金屬中之一些的儲集器、經結構設計以傳送儲集器中之熔融金屬且經由噴射器管提供熔融金屬流之熔融金屬泵系統(例如,一或多個電磁泵),及至少一個用於接收熔融金屬流之非噴射器熔融金屬儲集器; 至少一個點火系統,其包含電力或點火電流源,以向至少一個熔融金屬流供應電力,以在氫氣及/或氧氣及/或水蒸汽流入容器中時點火該反應; 反應物供應系統,其用以補充反應中消耗之反應物;及 功率轉換器或輸出系統,其用以將反應產生之能量的一部分(例如,自電漿輸出之光及/或熱)轉換成電力及/或熱功率。在一些實施例中,流出物包含初生水及原子氫(或由其組成)。在一些實施例中,流出物包含初生水及分子氫(或由其組成)。在一些實施例中,流出物包含初生水、原子氫及分子氫(或由其組成)。在一些實施例中,流出物進一步包含稀有氣體。 IV. A SunCell and Power Converter A power system that produces at least one of electrical energy and thermal energy (also referred to herein as a "SunCell") may include: a vessel capable of maintaining sub-atmospheric pressure; a reactant capable of undergoes reactions that generate sufficient energy to form a plasma in a vessel, such reactants comprising: a) a mixture of hydrogen and oxygen, and/or water vapor, and/or a mixture of hydrogen and water vapor; b) molten metal; mass a flow controller to control the flow rate of at least one reactant into the vessel; a vacuum pump to maintain the pressure in the vessel below atmospheric pressure as the one or more reactants flow into the vessel; a molten metal injector A system comprising at least one reservoir containing some of the molten metal, a molten metal pump system (e.g., one or more an electromagnetic pump), and at least one non-injector molten metal reservoir for receiving a molten metal stream; at least one ignition system including a source of electrical power or ignition current to supply electrical power to the at least one molten metal stream for use in hydrogen and The reaction is ignited by the flow of oxygen and/or water vapor into the vessel; a reactant supply system to replenish the reactants consumed in the reaction; and a power converter or output system to convert a portion of the energy produced by the reaction (eg, light and/or heat output from the plasma) is converted into electrical and/or thermal power. In some embodiments, the effluent comprises (or consists of) nascent water and atomic hydrogen. In some embodiments, the effluent comprises (or consists of) nascent water and molecular hydrogen. In some embodiments, the effluent comprises (or consists of) nascent water, atomic hydrogen, and molecular hydrogen. In some embodiments, the effluent further comprises noble gases.

在一些實施例中,電力系統可包含光學整流天線,諸如由A. Sharma、V. Singh、T. L. Bougher、B. A. Cola之「A carbon nanotube optical rectenna」(Nature Nanotechnology,第10卷,(2015),第1027至1032頁,數位物件識別碼:10.1038/nnano.2015.220,其以全文引用的方式併入本文中)所報告之光學整流天線,及至少一個熱-電功率轉換器。在另一實施例中,容器能夠具有大氣壓、高於大氣壓及低於大氣壓中之至少一者的壓力。在另一實施例中,至少一個直接電漿-電力轉換器可包含以下之群組中的至少一者:電漿動力功率轉換器、

Figure 02_image594
直接轉換器、磁流體動力功率轉換器、磁鏡磁流體動力功率轉換器、電荷漂移轉換器、桿式或百葉窗式功率轉換器、磁旋管、光子聚束微波功率轉換器及光電轉換器。在另一實施例中,至少一個熱-電力轉換器可包含以下之群組中的至少一者:熱機、蒸汽機、蒸汽渦輪機及發電機、燃氣渦輪機及發電機、朗肯循環引擎、布累登循環引擎、史特林引擎、熱離子功率轉換器及熱電功率轉換器。可包含將熱量排至環境氣氛之閉合冷卻劑系統或開放系統的例示性熱-電系統為超臨界CO2 、有機朗肯或外部燃燒器燃氣渦輪機系統。In some embodiments, the power system may include an optical rectenna, such as "A carbon nanotube optical rectenna" by A. Sharma, V. Singh, TL Bougher, BA Cola (Nature Nanotechnology, Vol. 10, (2015), p. pp. 1027-1032, Digital Object Identification Number: 10.1038/nnano.2015.220, which is incorporated herein by reference in its entirety), as reported in an optical rectenna, and at least one thermal-to-electrical power converter. In another embodiment, the container can have a pressure of at least one of atmospheric pressure, superatmospheric pressure, and subatmospheric pressure. In another embodiment, the at least one direct plasma-to-electricity converter may comprise at least one of the group consisting of: a plasma-powered power converter,
Figure 02_image594
Direct converters, magnetohydrodynamic power converters, magneto-mirror magnetohydrodynamic power converters, charge-drift converters, rod or louver power converters, magnetic coils, photonic beamforming microwave power converters, and photoelectric converters. In another embodiment, the at least one heat-to-electricity converter may include at least one of the group of: heat engine, steam engine, steam turbine and generator, gas turbine and generator, Rankine cycle engine, Bray Deng cycle engines, Stirling engines, thermionic power converters and thermoelectric power converters. Exemplary may comprise heat rejecting heat to an ambient atmosphere of the closed coolant system or open system - electric systems supercritical CO 2, or an organic Rankine external combustor of a gas turbine system.

除了本發明之UV光伏打及熱光伏打之外,SunCell®可包含此項技術中已知之其他電轉換構件,諸如熱離子、磁流體動力、渦輪機、微型渦輪機、朗肯或布累登循環渦輪機、化學及電化學功率轉換系統。朗肯循環渦輪機可包含超臨界CO2 、有機物(諸如氫氟碳化物或碳氟化合物)或蒸汽工作流體。在朗肯或布累登循環渦輪機中,SunCell®可將熱功率提供至渦輪機系統之預熱器、復熱器、鍋爐及外部燃燒器型熱交換器階段中之至少一者。在實施例中,布累登循環渦輪機包含整合於渦輪機之燃燒區段中之SunCell®渦輪機加熱器。SunCell®渦輪機加熱器可包含自壓縮機及復熱器中之至少一者接收空氣流之導管,其中空氣受熱且導管將加熱之壓縮流引導至渦輪機之入口,以執行壓力體積功。SunCell®渦輪機加熱器可替換或補充燃氣渦輪機之燃燒腔室。朗肯或布累登循環可關閉,其中功率轉換器進一步包含冷凝器及冷卻器中之至少一者。In addition to the UV photovoltaics and thermophotovoltaics of the present invention, SunCell® may include other electrical conversion components known in the art, such as thermionic, magnetohydrodynamic, turbines, microturbines, Rankine or Breedon cycle turbines , chemical and electrochemical power conversion systems. Rankine cycle turbines may contain supercritical CO 2 , organics such as hydrofluorocarbons or fluorocarbons, or steam working fluids. In a Rankine or Braden cycle turbine, SunCell® can provide thermal power to at least one of the preheater, reheater, boiler and external burner type heat exchanger stages of the turbine system. In an embodiment, the Braden cycle turbine includes a SunCell® turbine heater integrated in the combustion section of the turbine. The SunCell® turbine heater may include a conduit that receives a flow of air from at least one of a compressor and a recuperator, wherein the air is heated and the conduit directs the heated compressed flow to the inlet of the turbine to perform pressure volume work. SunCell® Turbine Heaters replace or supplement the combustion chamber of a gas turbine. The Rankine or Brayden cycle may be closed, wherein the power converter further includes at least one of a condenser and a cooler.

轉換器可為Mills先前公開案及Mills先前申請案中給出之轉換器。諸如H源及HOH源之低能量氫反應物及SunCell®系統可包含本發明或以全文引用之方式併入本文中的先前美國專利申請案之反應物及系統,該等申請案諸如Hydrogen Catalyst Reactor,PCT/US08/61455,PCT 2008年4月24日申請;Heterogeneous Hydrogen Catalyst Reactor,PCT/US09/052072,PCT 2009年7月29日申請;Heterogeneous Hydrogen Catalyst Power System,PCT/US10/27828,PCT 2010年3月18日申請;Electrochemical Hydrogen Catalyst Power System,PCT/US11/28889,PCT 2011年3月17日申請;H2 O-Based Electrochemical Hydrogen-Catalyst Power System,PCT/US12/31369,2012年3月30日申請;CIHT Power System,PCT/US13/041938,2013年5月21日申請;Power Generation Systems and Methods Regarding Same,PCT/IB2014/058177,PCT 2014年1月10日申請;Photovoltaic Power Generation Systems and Methods Regarding Same,PCT/US14/32584,PCT 2014年4月1日申請;Electrical Power Generation Systems and Methods Regarding Same,PCT/US2015/033165,PCT 2015年5月29日申請;Ultraviolet Electrical Generation System Methods Regarding Same,PCT/US2015/065826,PCT 2015年12月15日申請;Thermophotovoltaic Electrical Power Generator,PCT/US16/12620,PCT 2016年1月8日申請;Thermophotovoltaic Electrical Power Generator Network,PCT/US2017/035025,PCT 2017年12月7日申請;Thermophotovoltaic Electrical Power Generator,PCT/US2017/013972,PCT 2017年1月18日申請;Extreme and Deep Ultraviolet Photovoltaic Cell,PCT/US2018/012635,PCT 2018年1月5日申請;Magnetohydrodynamic Electric Power Generator,PCT/US18/17765,PCT 2018年2月12日申請;Magnetohydrodynamic Electric Power Generator,PCT/US2018/034842,PCT 2018年5月29日申請;Magnetohydrodynamic Electric Power Generator,PCT/IB2018/059646,PCT 2018年12月5日申請;及Magnetohydrodynamic Electric Power Generator,PCT/IB2020/050360,PCT 2020年1月16日申請(「Mills先前申請案」)。The converters may be those presented in the Mills prior publication and Mills prior application. Low energy hydrogen reactants such as H sources and HOH sources and the SunCell® system may include the reactants and systems of the present invention or previous US patent applications incorporated herein by reference in their entirety, such as the Hydrogen Catalyst Reactor , PCT/US08/61455, PCT filed on April 24, 2008; Heterogeneous Hydrogen Catalyst Reactor, PCT/US09/052072, filed on July 29, 2009; Heterogeneous Hydrogen Catalyst Power System, PCT/US10/27828, PCT 2010 Filed March 18, 2011; Electrochemical Hydrogen Catalyst Power System, PCT/US11/28889, PCT Filed March 17, 2011; H 2 O-Based Electrochemical Hydrogen-Catalyst Power System, PCT/US12/31369, March 2012 30th application; CIHT Power System, PCT/US13/041938, May 21st, 2013; Power Generation Systems and Methods Regarding Same, PCT/IB2014/058177, PCT January 10th, 2014; Photovoltaic Power Generation Systems and Methods Regarding Same, PCT/US14/32584, filed on April 1, 2014; Electrical Power Generation Systems and Methods Regarding Same, PCT/US2015/033165, filed on May 29, 2015; Ultraviolet Electrical Generation System Methods Regarding Same , PCT/US2015/065826, PCT filed on December 15, 2015; Thermophotovoltaic Electrical Power Generator, PCT/US16/12620, PCT filed on January 8, 2016; Thermophotovoltaic Electrical Power Generator Ne twork, PCT/US2017/035025, PCT filed on Dec. 7, 2017; Thermophotovoltaic Electrical Power Generator, PCT/US2017/013972, filed on Jan. 18, 2017; Extreme and Deep Ultraviolet Photovoltaic Cell, PCT/US2018/012635, PCT application on January 5, 2018; Magnetohydrodynamic Electric Power Generator, PCT/US18/17765, PCT application on February 12, 2018; Magnetohydrodynamic Electric Power Generator, PCT/US2018/034842, PCT application on May 29, 2018; Magnetohydrodynamic Electric Power Generator, PCT/IB2018/059646, filed under PCT Dec. 5, 2018; and Magnetohydrodynamic Electric Power Generator, PCT/IB2020/050360, filed under PCT Jan. 16, 2020 ("Mills Prior Application").

在實施例中,點火H2 O以形成具有高能量釋放之低能量氫,該能量呈熱、電漿及電磁(光)功率中之至少一者的形式。(在本發明中之「點火」表示H至低能量氫之極高反應速率,其可顯示為峰值、脈衝或其他形式之高功率釋放。)H2 O可包含可利用施加高電流(諸如,在約10 A至100,000 A之範圍內的高電流)點火的燃料。此可藉由施加諸如約5,000至100,000 V之高壓以首先形成高導電電漿(諸如電弧)而達成。替代地,高電流可穿過諸如熔融金屬之導電基質,諸如銀,其進一步包含諸如H及HOH之低能量氫反應物或包含H2 O的化合物或混合物,其中諸如固體燃料之所得燃料的導電性較高。(在本發明中,使用固體燃料來表示形成進一步反應而形成低能量氫的諸如HOH及H之催化劑的反應物混合物。電漿電壓可較低,諸如在約1 V至100 V之範圍內。然而,反應混合物可包含除固體以外的其他物理狀態。在實施例中,反應混合物可為以下中之至少一種狀態:氣態、液體、熔融基質(諸如熔融導電基質,諸如熔融金屬,諸如熔融銀、銀銅合金及銅中之至少一者)、固體、漿液、溶膠凝膠、溶液、混合物、氣態懸浮液、氣動流及熟習此項技術者已知之其他狀態)。在實施例中,具有極低電阻之固體燃料包含反應混合物,該反應混合物包含H2 O。低電阻可係由於反應混合物之導體組分。在實施例中,固體燃料之電阻為在以下範圍內中之至少一者:約10-9 歐姆至100歐姆、10-8 歐姆至10歐姆、10-3 歐姆至1歐姆、10-4 歐姆至10-1 歐姆及10-4 歐姆至10-2 歐姆。在另一實施例中,具有高電阻之燃料包含含痕量或微量莫耳百分比之經添加化合物或材料的H2 O。在後一種情況下,可使高電流流過燃料,以藉由引起擊穿而達成點火,從而形成高度導電狀態(諸如電弧或電弧電漿)。In an embodiment, the ignition H 2 O to form a low energy hydrogen having a high energy release of this energy in the form of heat, plasma and electromagnetic (light) in the power at least one of. (In the present invention, the "firing" means an extremely high reaction rate of the hydrogen H to low energy, which can be displayed as a peak release, pulse, or other forms of high power.) H 2 O can be used may comprise a high current is applied (such as, Fuels that ignite at high currents in the range of about 10 A to 100,000 A). This can be achieved by applying a high voltage such as about 5,000 to 100,000 V to first form a highly conductive plasma, such as an arc. Alternatively, the high current may pass through the electrically conductive substrate, such as a molten metal, such as silver, which further comprises a low energy such as the H and HOH hydrogen reactant comprising H 2 O or a compound or mixture, wherein the resulting solid fuels such as fuel conductive Sex is higher. (In the present invention, solid fuel is used to denote a mixture of reactants that form catalysts such as HOH and H that further react to form low energy hydrogen. Plasma voltages may be lower, such as in the range of about 1 V to 100 V. However, the reaction mixture may comprise other physical states than solids. In embodiments, the reaction mixture may be in at least one of the following states: gaseous, liquid, molten matrix (such as molten conductive matrix, such as molten metal, such as molten silver, at least one of silver copper alloys and copper), solids, slurries, sol-gels, solutions, mixtures, gaseous suspensions, pneumatic flow, and other states known to those skilled in the art). In an embodiment, the solid fuel having an extremely low resistance of a reaction mixture containing the reaction mixture comprising H 2 O. The low resistance may be due to the conductor component of the reaction mixture. In an embodiment, the resistance of the solid fuel is at least one of the following ranges: about 10-9 ohms to 100 ohms, 10-8 ohms to 10 ohms, 10-3 ohms to 1 ohm, 10-4 ohms to 10 -1 ohm and 10 -4 ohm to 10 -2 ohm. In another embodiment, the fuel having a high resistance to include H containing a trace or micro molar percentages of compounds or materials added over 2 O. In the latter case, a high current can be passed through the fuel to achieve ignition by causing breakdown, thereby creating a highly conductive state (such as an arc or arc plasma).

在實施例中,反應物可包含H2 O源及導電基質,以形成催化劑源、催化劑、原子氫源及原子氫中之至少一者。在另一實施例中,包含H2 O源之反應物可包含以下中之至少一者:體相H2 O、除體相H2 O以外的狀態、經歷用以形成H2 O及釋放結合之H2 O的反應中之至少一者的一或多種化合物。另外,經結合H2 O可包含與H2 O相互作用之化合物,其中H2 O處於經吸收H2O、經結合H2 O、物理吸附之H2 O及水合水中之至少一者的狀態。在實施例中,反應物可包含導體及一或多種化合物或材料,該一或多種化合物或材料經歷體相H2 O、經吸收H2 O、經結合H2 O、物理吸附之H2 O及水合水之釋放中之至少一者且其反應產物為H2 O。在其他實施例中,初生H2 O催化劑源及原子氫源中之至少一者可包含以下中之至少一者:(a)至少一種H2 O源;(b)至少一種氧源;及(c)至少一種氫源。In an embodiment, the reactant can comprise H 2 O source and the conductive substrate, to form a catalyst source, catalyst, a source of atomic hydrogen and the hydrogen atoms of at least one. In another embodiment, the reactants comprise H 2 O may comprise the source of the at least one of the following: H 2 O phase, phase state other than the H 2 O, H 2 O and subjected to release the formed binding one or more compounds of H 2 O in the reaction of at least one of. Further, the binding compound may comprise a H 2 O H 2 O with the interaction, wherein H 2 O is absorbed by H2O, dried over H 2 O bound state, physical adsorption of at least one of H 2 O and the water of hydration. In an embodiment, the reactant can include a conductor and one or more compounds or materials, the one or more compounds or material undergoes phase H 2 O, was absorbed H 2 O, by binding H 2 O, physical adsorption of H 2 O and the release of water of hydration of at least one, and in which the reaction product is H 2 O. In other embodiments, at least one of the nascent H 2 O catalyst source and the atomic hydrogen source may comprise at least one of: (a) at least one source of H 2 O; (b) at least one source of oxygen; and ( c) at least one source of hydrogen.

在實施例中,低能量氫反應速率取決於高電流之施加或產生。在SunCell®之實施例中,形成低能量氫之反應物經受引起極快反應速率及能量釋放的低電壓、高電流、高功率脈衝。在例示性實施例中,60 Hz電壓小於15 V峰值,電流在100 A/cm2 與50,000 A/cm2 峰值之間的範圍內,且功率在1000 W/cm2 與750,000 W/cm2 之間的範圍內。在此等參數之約1/100倍至100倍之範圍內之其他頻率、電壓、電流及功率係合適的。在實施例中,低能量氫反應速率取決於高電流之施加或產生。在實施例中,電壓經選擇為引起具有在以下至少一個範圍內的電流之高AC、DC或AC-DC混合:100 A至1,000,000 A、1 kA至100,000 A、10 kA至50 kA。DC或峰值AC電流密度可在以下中之至少一者的範圍內: 100 A/cm2 至1,000,000 A/cm2 、1000 A/cm2 至100,000 A/cm2 及2000 A/cm2 至 50,000 A/cm2 。DC或峰值AC電壓可在選自以下之至少一個範圍內:約0.1 V至1000 V、0.1 V至100 V、0.1 V至15 V及1 V 至15 V。AC頻率可在以下範圍內:約0.1 Hz至10 GHz、1 Hz至1 MHz、10 Hz至100 kHz及100 Hz至10 kHz。脈衝時間可在選自以下之至少一個範圍內:約10-6 s至10 s、10-5 s至1 s、10-4 s至0.1 s及10-3 s至0.01 s。In embodiments, the low energy hydrogen reaction rate depends on the application or generation of high current. In an embodiment of SunCell®, the reactants that form low energy hydrogen are subjected to low voltage, high current, high power pulses that cause extremely fast reaction rates and energy release. In the exemplary embodiment, 60 Hz voltage is less than 15 V peak current in the range between the peak 100 A / cm 2 and 50,000 A / cm, and the power is 1000 W / cm 2 and 750,000 W / cm 2 of within the range. Other frequencies, voltages, currents and powers in the range of about 1/100 times to 100 times these parameters are suitable. In embodiments, the low energy hydrogen reaction rate depends on the application or generation of high current. In an embodiment, the voltage is selected to induce a high AC, DC or AC-DC mix with current in at least one of the following ranges: 100 A to 1,000,000 A, 1 kA to 100,000 A, 10 kA to 50 kA. The DC or peak AC current density may be in the range of at least one of: 100 A/cm 2 to 1,000,000 A/cm 2 , 1000 A/cm 2 to 100,000 A/cm 2 and 2000 A/cm 2 to 50,000 A /cm 2 . The DC or peak AC voltage may be in at least one range selected from about 0.1 V to 1000 V, 0.1 V to 100 V, 0.1 V to 15 V, and 1 V to 15 V. AC frequencies can be in the following ranges: approximately 0.1 Hz to 10 GHz, 1 Hz to 1 MHz, 10 Hz to 100 kHz, and 100 Hz to 10 kHz. The pulse time may be in at least one range selected from about 10-6 s to 10 s, 10-5 s to 1 s, 10-4 s to 0.1 s, and 10-3 s to 0.01 s.

在包含AC或時變點火電流且進一步包含至少一個包含永久磁體之DC EM泵的實施例中,磁體可與AC點火電流之AC磁場屏蔽。屏蔽物可包含高導磁合金、Amumetal、Amunickel、Cryoperm 10及此項技術中已知之其他磁性屏蔽材料。磁性屏蔽可防止永久磁體消磁。在例示性實施例中,每一屏蔽物可包含定位於對應EM泵永久磁體頂部上且縱向覆蓋該永久磁體的重鐵條,諸如厚度在約5 mm至50 mm範圍內之重鐵條。此類發電系統說明於圖2至圖3、圖23及圖29A至圖29C中。In embodiments comprising an AC or time-varying firing current and further comprising at least one DC EM pump comprising a permanent magnet, the magnets may be shielded from the AC magnetic field of the AC firing current. The shield may comprise Permeability Alloy, Amumetal, Amunickel, Cryoperm 10, and other magnetic shielding materials known in the art. Magnetic shielding prevents permanent magnets from demagnetizing. In an exemplary embodiment, each shield may include a heavy iron bar positioned on top of and longitudinally covering the corresponding EM pump permanent magnet, such as a heavy iron bar having a thickness in the range of about 5 mm to 50 mm. Such power generation systems are illustrated in Figures 2-3, 23, and 29A-29C.

在實施例中,諸如反應單元腔室5b31或EM泵管5k6之至少一個導電SunCell®組件可包含、內襯有或塗佈有諸如陶瓷之電絕緣體以避免引起EM泵磁體消磁之渦電流。在例示性實施例中,包含不鏽鋼反應單元腔室之SunCell®包含BN、SiC或石英襯裡或陶瓷塗層,諸如本發明中之一者。In embodiments, at least one conductive SunCell® component, such as reaction cell chamber 5b31 or EM pump tube 5k6, may contain, be lined, or coated with an electrical insulator, such as ceramic, to avoid eddy currents that cause demagnetization of the EM pump magnet. In an exemplary embodiment, a SunCell® comprising a stainless steel reaction cell chamber comprises a BN, SiC or quartz liner or ceramic coating, such as one of the present invention.

在點火功率為時間相依性(諸如AC電力,諸如60 Hz電力)之實施例中,DC EM泵之每一EM磁體可包含相對EM泵磁體與磁性屏蔽物(諸如高導磁合金屏蔽物)之間的磁性磁軛中之至少一者,以防止EM泵磁體藉由時變點火功率而消磁。In embodiments where the firing power is time dependent (such as AC power, such as 60 Hz power), each EM magnet of the DC EM pump may include a relative EM pump magnet and a magnetic shield (such as a permeable alloy shield) at least one of the magnetic yokes in between to prevent demagnetization of the EM pump magnet by time-varying ignition power.

在實施例中,EM泵磁體5k4沿著與連接兩個電極之噴射熔融金屬流之軸線相同的軸線定向,該等電極可沿著如圖23至圖29E中所示之相同軸線對置。磁體可位於EM泵管5k6之相對側上,其中一者沿著噴射軸線在與另一者相反之方向上定位。EM泵匯流條5k2可各自垂直於噴射軸線定向且在遠離最接近磁體之側的方向上定向。EM泵磁體可各自進一步包含L形磁軛,其用以相對於EM泵管5k6,且垂直於管中之熔融金屬流動方向及EM泵電流上之方向兩者在橫向方向上自對應豎直定向磁體引導磁通量。點火系統可包含具有包含電壓及電流之時變波形之點火系統,諸如AC波形,諸如60 Hz波形。磁體之豎直定向可保護其免於藉由時變點火電流而消磁。In an embodiment, the EM pump magnet 5k4 is oriented along the same axis as the axis of the jet of molten metal connecting the two electrodes, which may be opposed along the same axis as shown in Figures 23-29E. The magnets may be located on opposite sides of the EM pump tube 5k6, one of which is located in the opposite direction to the other along the jet axis. The EM pump bus bars 5k2 may each be oriented perpendicular to the jet axis and in a direction away from the side closest to the magnet. The EM pump magnets may each further comprise an L-shaped yoke for a self-corresponding vertical orientation in a lateral direction relative to the EM pump tube 5k6, perpendicular to both the direction of molten metal flow in the tube and the direction on the EM pump current. The magnet guides the magnetic flux. The ignition system may include an ignition system having a time-varying waveform including voltage and current, such as an AC waveform, such as a 60 Hz waveform. The vertical orientation of the magnets protects them from demagnetization by the time-varying ignition current.

在實施例中,傳遞來自經催化為低能量氫狀態之原子氫的能量導致對催化劑之電離。自催化劑電離之電子可積聚在反應混合物及容器中並引起空間電荷堆積。空間電荷可改變用於自原子氫至催化劑之後續能量傳遞的能級,同時降低反應速率。在實施例中,施加高電流會移除空間電荷,以引起低能量氫反應速率之增大。在另一實施例中,諸如電弧電流之高電流使得可充當H源及HOH催化劑之反應物(諸如水)的溫度極快提高。高溫可引起水熱解為H及HOH催化劑中之至少一者。在實施例中,SunCell®之反應混合物包含H源及催化劑(諸如

Figure 02_image596
(n為整數)及HOH中之至少一者)的源。
Figure 02_image596
及HOH中之至少一者可藉由至少一種物相之水(諸如,固體、液體及氣態水中之至少一者)的熱解或熱分解形成。熱解可在高溫(諸如,在約500K至10,000K、1000K至7000K及1000K至5000K之至少一個範圍內的溫度)下發生。在例示性實施例中,反應溫度為約3500至4000K,使得原子H之莫耳分數較高,如由J. Lede、F. Lapicque及J Villermaux所展示:[J. Lede、F. Lapicque、J. Villermaux,「Production of hydrogen by direct thermal decomposition of water」, International Journal of Hydrogen Energy, 1983,V8 , 1983,第675-679頁;H. H. G. Jellinek、H. Kachi,「The catalytic thermal decomposition of water and the production of hydrogen」, International Journal of Hydrogen Energy, 1984,V9 ,第 677-688頁;S. Z. Baykara,「Hydrogen production by direct solar thermal decomposition of water, possibilities for improvement of process efficiency」,,International Journal of Hydrogen Energy, 2004,V29 ,第1451-1458頁;S. Z. Baykara,,「Experimental solar water thermolysis」,International Journal of Hydrogen Energy, 2004,V29 ,第1459-1469 頁,其以引用之方式併入本文中]。熱解可由固體表面(諸如電池組分中之一者)輔助。可藉由輸入功率及藉由低能量氫反應所保持之電漿將固體表面加熱至高溫。熱解氣體(諸如點火區之彼等向下的氣體流)可經冷卻以防止再結合或產物至初始水含量之逆反應。反應混合物可包含處於比產物氣體之溫度低的溫度下的冷卻劑,諸如固相、液相或氣相中之至少一者。熱解反應產物氣體之冷卻可藉由使產物與冷卻劑接觸而達成。冷卻劑可包含低溫蒸汽、水及冰中之至少一者。In an embodiment, the transfer of energy from atomic hydrogen catalyzed to a low energy hydrogen state results in ionization of the catalyst. Electrons ionized from the catalyst can accumulate in the reaction mixture and vessel and cause space charge build-up. Space charges can alter the energy levels used for subsequent energy transfer from atomic hydrogen to the catalyst, while reducing the reaction rate. In an embodiment, applying a high current removes the space charge to cause an increase in the reaction rate of low energy hydrogen. In another embodiment, a high current, such as an arc current, increases the temperature of a reactant (such as water) that can act as an H source and HOH catalyst very rapidly. High temperatures can cause hydrolysis to at least one of H and HOH catalysts. In an embodiment, the reaction mixture of SunCell® comprises a source of H and a catalyst such as
Figure 02_image596
(n is an integer) and at least one of HOH).
Figure 02_image596
and at least one of HOH may be formed by pyrolysis or thermal decomposition of at least one phase of water, such as at least one of solid, liquid, and gaseous water. Pyrolysis can occur at elevated temperatures, such as at temperatures in the range of at least one of about 500K to 10,000K, 1000K to 7000K, and 1000K to 5000K. In exemplary embodiments, the reaction temperature is about 3500 to 4000 K, resulting in a high molar fraction of atomic H, as shown by J. Lede, F. Lapicque, and J Villermaux: [J. Lede, F. Lapicque, J. . Villermaux, "Production of hydrogen by direct thermal decomposition of water", International Journal of Hydrogen Energy, 1983, V8 , 1983, pp. 675-679; HHG Jellinek, H. Kachi, "The catalytic thermal decomposition of water and the production of hydrogen”, International Journal of Hydrogen Energy, 1984, V9 , pp. 677-688; SZ Baykara, “Hydrogen production by direct solar thermal decomposition of water, possibilities for improvement of process efficiency”, International Journal of Hydrogen Energy, 2004 , V29 , pp. 1451-1458; SZ Baykara, "Experimental solar water thermolysis", International Journal of Hydrogen Energy, 2004, V29 , pp. 1459-1469, which is incorporated herein by reference]. Pyrolysis can be assisted by a solid surface, such as one of the battery components. The solid surface can be heated to high temperature by the input power and the plasma maintained by the low energy hydrogen reaction. The pyrolysis gases, such as their downward gas flow from the ignition zone, can be cooled to prevent recombination or reverse reaction of the product to the initial water content. The reaction mixture may include a coolant, such as at least one of a solid phase, a liquid phase, or a gas phase, at a temperature lower than the temperature of the product gas. Cooling of the pyrolysis reaction product gas can be accomplished by contacting the product with a coolant. The coolant may include at least one of low temperature steam, water, and ice.

在實施例中,燃料或反應物可包含H源、H2 、催化劑源、H2 O源及H2 O中之至少一者。合適的反應物可包含導電金屬基質及水合物,諸如鹼性水合物、鹼土水合物及過渡金屬水合物中之至少一者。水合物可包含MgCl2 ·6H2 O、BaI2 ·2H2 O及ZnCl2 ·4H2 O中之至少一者。替代地,反應物可包含銀、銅、氫、氧及水中之至少一者。In an embodiment, the fuel or the reactants may comprise a source H, H 2, catalyst source, H 2 O and H 2 O in the source of at least one. Suitable reactants may include conductive metal substrates and hydrates, such as at least one of alkaline hydrates, alkaline earth hydrates, and transition metal hydrates. Hydrate may comprise MgCl 2 · 6H 2 O, BaI 2 · 2H 2 O and ZnCl 2 · 4H 2 O in the at least one. Alternatively, the reactants may include at least one of silver, copper, hydrogen, oxygen, and water.

在實施例中,反應物可經歷電漿形成反應之反應單元腔室5b31可在低壓下操作以達成高氣體溫度。接著壓力可藉由反應混合物氣體源及控制器增大以增大反應速率,其中高溫藉由水二聚體之H鍵及H2 共價鍵中之至少一者之熱解保持初生HOH及原子H。達成熱解之例示性臨限氣體溫度為約3300℃。具有高於約3300℃之溫度的電漿可破壞H2 O二聚體鍵以形成初生HOH來充當低能量氫催化劑。反應單元腔室H2 O蒸汽壓、H2 壓力及O2 壓力中之至少一者可在約0.01 托至100 atm、0.1 托至10 atm及0.5 托至1 atm之至少一個範圍內。EM泵抽速率可在約0.01 ml/s至10,000 ml/s、0.1 ml/s至1000 ml/s及0.1 ml/s至100 ml/s之至少一個範圍內。在實施例中,可最初保持高點火功率及低壓中之至少一者以加熱電漿及單元來達成熱解。初始功率可包含高頻脈衝、具有高工作循環之脈衝、較高電壓及較高電流及連續電流中之至少一者。在實施例中,點火功率中之至少一者可降低,且壓力可在加熱電漿及單元後增大以達成熱解。在另一實施例中,SunCell®可包含用於加熱低能量氫反應電漿及單元以達成熱解之額外電漿源,諸如電漿炬、輝光放電、微波或RF電漿源。In an embodiment, the reaction cell chamber 5b31 where the reactants can undergo plasma forming reactions can be operated at low pressure to achieve high gas temperatures. Then the reaction mixture by gas pressure may be a source, and a controller to increase the rate of reaction is increased, wherein the high temperature water by-dimer of H 2 and H bond covalent bond heat of solution of at least one of the primary holding HOH atoms and H. An exemplary threshold gas temperature to achieve pyrolysis is about 3300°C. Plasma having a temperature of greater than about 3300 deg.] C can damage H 2 O bond to form a dimer to serve as low-energy primary HOH hydrogenation catalyst. At least one of the reaction unit chamber H 2 O vapor pressure, H 2 pressure, and O 2 pressure may be in a range of at least one of about 0.01 Torr to 100 atm, 0.1 Torr to 10 atm, and 0.5 Torr to 1 atm. The EM pumping rate can be in a range of at least one of about 0.01 ml/s to 10,000 ml/s, 0.1 ml/s to 1000 ml/s, and 0.1 ml/s to 100 ml/s. In an embodiment, at least one of high ignition power and low pressure may be initially maintained to heat the plasma and cells to achieve pyrolysis. The initial power may comprise at least one of high frequency pulses, pulses with high duty cycle, higher voltage and higher current, and continuous current. In an embodiment, at least one of the firing power can be reduced and the pressure can be increased after heating the plasma and cell to achieve pyrolysis. In another embodiment, SunCell® may include additional plasma sources, such as plasma torches, glow discharge, microwave or RF plasma sources, for heating the low energy hydrogen reactive plasma and cells to achieve pyrolysis.

在實施例中,點火功率可處於本發明之初始功率位準及波形,且可在反應單元腔室達成所要溫度時切換至第二功率位準及波形。在實施例中,第二功率位準可小於初始功率位準。第二功率位準可為約零。切換功率位準及波形中之至少一者的條件為反應單元腔室溫度達成高於臨限值,其中低能量氫反應動力學可在以第二功率位準操作時保持在初始速率之20%至100%內。在實施例中,溫度臨限值可在約800℃至3000℃、900℃至2500℃及1000℃至2000℃之至少一個範圍內。In an embodiment, the firing power can be at the initial power level and waveform of the present invention, and can be switched to a second power level and waveform when the reaction cell chamber reaches the desired temperature. In an embodiment, the second power level may be less than the initial power level. The second power level may be about zero. The condition for switching at least one of the power level and the waveform is that the reaction unit chamber temperature reaches above a threshold value, wherein the low energy hydrogen reaction kinetics can be maintained at 20% of the initial rate when operating at the second power level to within 100%. In embodiments, the temperature threshold may be in at least one of a range of about 800°C to 3000°C, 900°C to 2500°C, and 1000°C to 2000°C.

在實施例中,將反應單元腔室加熱至在不存在點火功率之情況下將保持低能量氫反應之溫度。在實施例中,在點火功率終止之後可或可不保持EM泵抽,其中在SunCell®之點火關閉操作期間保持諸如H2 、O2 及H2 O中之至少一者的低能量氫反應物之供應。在例示性實施例中,圖23中所示之SunCell®用二氧化矽-氧化鋁纖維絕緣體良好地絕緣,2500 sccm H2 及250 sccm O2 氣體流過Pt/Al2 O3 珠粒,且將SunCell®加熱至900℃至1400℃範圍內之溫度。在持續保持H2 及O2 流及EM泵抽情況下,低能量氫反應在不存在點火功率之情況下自持續,如藉由在輸入點火功率不存在情況下溫度隨時間之增大所證實。In an embodiment, the reaction cell chamber is heated to a temperature that will maintain the low energy hydrogen reaction in the absence of ignition power. In embodiments, EM pumping may or may not be maintained after ignition power is terminated, wherein a low energy hydrogen reactant such as at least one of H 2 , O 2 and H 2 O is maintained during SunCell® ignition off operation. supply. In an exemplary embodiment, SunCell® shown in FIG. 23 with the silicon dioxide - alumina fiber insulation is well insulated, 2500 sccm H 2 and 250 sccm O 2 gas flow through the Pt / Al 2 O 3 beads, and Heat SunCell® to a temperature in the range of 900°C to 1400°C. And continued to maintain the H 2 O 2 and flow pumping EM case, low energy hydrogen reaction in the absence of power from the ignition duration, such as by increasing the temperature with time when the input of the ignition power is not confirmed by the presence of .

點火系統 在實施例中,點火系統包含用於進行以下各者中之至少一者的開關:起始電流及在達成點火之後中斷電流。電流流動可藉由接觸熔融金屬流起始。切換可藉由諸如以下各者中之至少一者之構件以電子方式執行:絕緣閘極雙極電晶體(IGBT)、矽控整流器(SCR)及至少一個金屬氧化物半導體場效電晶體(MOSFET)。替代地,可以機械方式對點火進行切換。在點火之後可中斷電流以便使輸出低能量氫產生之能量相對於輸入點火能量達到最佳。點火系統可包含在其中產生電漿之階段期間允許可控量之能量流入燃料中以引起爆震並關掉電源的開關。在實施例中,用以傳送短脈衝高電流電能之電力源包含以下中之至少一者: 經選擇以引起在100 A至1,000,000 A、1 kA至100,000 A、10 kA至50 kA中之至少一者之範圍內的電流之高AC、DC或AC-DC混合之電壓; 在以下中之至少一者之範圍內的DC或峰值AC電流密度:1 A/cm2 至1,000,000 A/cm2 、1000 A/cm2 至100,000 A/cm2 及2000 A/cm2 至50,000 A/cm2 ; 其中電壓由固體燃料之導電性判定,其中該電壓由所需電流乘以固體燃料樣品之電阻而得到; DC或峰值AC電壓在0.1 V至500 kV、0.1 V至100 kV及1 V至50kV中之至少一者之範圍內,且 AC頻率在0.1 Hz至10 GHz、1 Hz至1 MHz、10 Hz至100 kHz及100 Hz至10 kHz中之至少一者之範圍內。 Ignition System In an embodiment, an ignition system includes a switch for at least one of: initiating current flow and interrupting current flow after ignition is achieved. Current flow can be initiated by contacting the flow of molten metal. Switching can be performed electronically by means of components such as at least one of: insulated gate bipolar transistors (IGBTs), silicon-controlled rectifiers (SCRs), and at least one metal-oxide-semiconductor field-effect transistor (MOSFET) ). Alternatively, the ignition may be switched mechanically. The current flow can be interrupted after ignition to optimize the output low energy hydrogen production energy relative to the input ignition energy. The ignition system may include a switch that allows a controllable amount of energy to flow into the fuel to cause knock and turn off the power during the phase in which the plasma is generated. In an embodiment, the power source used to deliver short pulse high current electrical energy comprises at least one of: selected to cause at least one of 100 A to 1,000,000 A, 1 kA to 100,000 A, 10 kA to 50 kA High AC, DC or AC-DC mixed voltage for currents within the range of either; DC or peak AC current density within the range of at least one of the following: 1 A/cm 2 to 1,000,000 A/cm 2 , 1000 A/cm 2 to 100,000 A/cm 2 and 2000 A/cm 2 to 50,000 A/cm 2 ; wherein the voltage is determined by the conductivity of the solid fuel, wherein the voltage is obtained by multiplying the required current by the resistance of the solid fuel sample; DC or peak AC voltage in the range of at least one of 0.1 V to 500 kV, 0.1 V to 100 kV, and 1 V to 50 kV, and AC frequency in the range of 0.1 Hz to 10 GHz, 1 Hz to 1 MHz, 10 Hz to within the range of at least one of 100 kHz and 100 Hz to 10 kHz.

系統進一步包含諸如電池(諸如鋰離子電池)之啟動功率/能源。替代地,可經由自外部電源至發電機之連接提供用於啟動的諸如柵極電源之外部電源。連接可包含功率輸出匯流條。啟動功率能源可進行以下中之至少一者:向加熱器供應電力以保持熔融金屬導電基質、對噴射系統供電及對點火系統供電。The system further includes a starting power/energy source such as a battery, such as a lithium ion battery. Alternatively, an external power source, such as a grid power source, for starting may be provided via a connection from the external power source to the generator. Connections may include power output bus bars. Activating the power source may be at least one of: supplying power to a heater to maintain the molten metal conductive substrate, powering an injection system, and powering an ignition system.

SunCell®可包含在高壓下具有水以提供高壓氫之高壓水電解劑,諸如包含質子交換膜(PEM)電解劑的一者。H2 及O2 腔室中之每一者可包含用以分別消除污染物O2 及H2 之再結合器。PEM可充當陽極及陰極室之分離器及鹽橋中之至少一者,以允許在陰極處產生氫氣且在陽極處產生氧氣作為分離氣體。陰極可包含二硫屬化物析氫催化劑,諸如包含鈮及鉭中之至少一者的可進一步包含硫的一者。陰極可包含此項技術中已知的一者,諸如Pt或Ni。氫可在高壓下產生且可直接地或藉由經由氫滲透性膜之滲透而供應至反應單元腔室5b31。SunCell®可包含自陽極室至將氧氣傳送至儲存容器或排氣孔之點的氧氣管線。在實施例中,SunCell®包含感測器、處理器及電解電流控制器。SunCell® may include a high pressure water electrolyte with water at high pressure to provide high pressure hydrogen, such as one comprising a proton exchange membrane (PEM) electrolyte. And each of H 2 O 2 in the chamber, respectively, to eliminate contaminants may include O 2 and H 2 The recombination. The PEM can act as at least one of a separator and a salt bridge for the anode and cathode chambers to allow the production of hydrogen at the cathode and oxygen at the anode as separation gases. The cathode may include a dichalcogenide hydrogen evolution catalyst, such as one that includes at least one of niobium and tantalum, which may further include sulfur. The cathode may comprise one known in the art, such as Pt or Ni. Hydrogen can be generated under high pressure and can be supplied to the reaction unit chamber 5b31 directly or by permeation through a hydrogen permeable membrane. The SunCell® may contain an oxygen line from the anode chamber to the point of delivering the oxygen to a storage vessel or vent. In an embodiment, the SunCell® includes a sensor, a processor, and an electrolytic current controller.

在另一實施例中,氫燃料可自水之電解、重整天然氣、藉由使蒸汽與碳反應以形成H2 及CO及CO2 之合成氣反應及水煤氣變換反應中之至少一者,以及熟習此項技術者已知之其他氫產生方法獲得。In another embodiment, the hydrogen fuel may be from electrolysis of water, the reforming of natural gas, by the reaction of at least one of the carbon is reacted with steam to form CO and H 2 and CO 2 of the syngas reactor and the water-gas shift, and Obtained by other hydrogen production methods known to those skilled in the art.

在另一實施例中,氫可藉由使用所供應水及由SunCell®產生之熱量的熱解來產生。熱解循環可包含本發明或此項技術中已知的一種中之一者,諸如基於金屬及其氧化物(諸如SnO/Sn及ZnO/Zn中之至少一者)的一者。在其中電感耦合加熱器、EM泵及點火系統僅在啟動期間消耗功率的實施例中,氫可藉由熱解產生,使得附加電功率要求極低。SunCell®可包含用以提供電力以運行諸如氣體感測器及控制系統之系統的諸如鋰離子電池的電池,該等控制系統諸如用於反應電漿氣體的控制系統。In another embodiment, hydrogen can be generated by pyrolysis using the supplied water and the heat generated by the SunCell®. The pyrolysis cycle may comprise one of the present invention or one known in the art, such as one based on metals and their oxides, such as at least one of SnO/Sn and ZnO/Zn. In embodiments where the inductively coupled heater, EM pump and ignition system consume power only during start-up, hydrogen can be produced by pyrolysis, making additional electrical power requirements extremely low. SunCell® may include batteries, such as lithium-ion batteries, to provide power to operate systems such as gas sensors and control systems, such as those used to react plasma gases.

磁流體動力 ( MHD ) 轉換器 基於交叉磁場中之離子或導電介質之質量流的形成的電荷分離為熟知的磁流體動力(MHD)功率轉換技術。正及負離子在相反方向上經歷洛仁子方向且在對應MHD電極處經接收以影響其間的電壓。形成離子質量流之典型MHD方法為經由噴嘴使接種有離子之高壓氣體膨脹以產生穿過交叉磁場之高速流,其中一組MHD電極相對於偏轉場交叉以接收經偏轉離子。在實施例中,壓力通常大於大氣壓,且可藉由低能量氫反應達成定向質量流以形成電漿及高度導電的高壓且高溫熔融金屬蒸汽,其經膨脹以產生穿過MHD轉換器之交叉磁場區段的高速流。可流過MHD轉換器之流可為軸向或徑向的。其他方向之流可藉由約束性磁體,諸如赫爾姆霍茲線圈或磁瓶之彼等磁體達成。Charge magneto-hydrodynamic (MHD) converter based on the mass of the ion or a cross magnetic field formed by the conductive medium to flow separation known magneto-hydrodynamic (MHD) power conversion technology. Positive and negative ions experience the lorinzi direction in opposite directions and are received at the corresponding MHD electrodes to affect the voltage therebetween. A typical MHD method of forming a mass flow of ions is to expand a high pressure gas seeded with ions through a nozzle to create a high velocity flow through a crossed magnetic field where a set of MHD electrodes cross against a deflection field to receive deflected ions. In embodiments, the pressure is typically greater than atmospheric pressure, and directional mass flow can be achieved by low energy hydrogen reactions to form plasma and a highly conductive high pressure and high temperature molten metal vapor that expands to generate a crossed magnetic field across the MHD converter high-speed flow of the segment. The flow that can flow through the MHD converter can be axial or radial. Flow in other directions can be achieved by confinement magnets such as Helmholtz coils or magnetic bottles.

具體言之,圖1至圖22中所示之MHD電力系統可包含本發明之低能量氫反應電漿源,諸如包含EM泵5ka的電漿源、至少一個儲集器5c、至少兩個電極(諸如包含雙熔融金屬噴射器5k61之電極)、低能量氫反應物源(諸如HOH催化劑及H源)、點火系統,其包含用以將電壓及電流施加至電極以自低能量氫反應物形成電漿之電力源2,及MHD電力轉換器。在實施例中,點火系統可包含電壓及電流源,諸如DC電源供應器,及一組用於傳送具有高電流脈衝之容量之脈衝式點火的電容器。在雙熔融金屬噴射器實施例中,電流流過噴射熔融金屬流以在該等流連接時點火電漿。MHD電力系統之包含低能量氫反應電漿源及MHD轉換器之組件可包含抗氧化材料(諸如抗氧化金屬)、包含抗氧化塗層之金屬及陶瓷中之至少一者,使得系統可在空氣中操作。Specifically, the MHD power system shown in Figures 1-22 may comprise a low energy hydrogen reactive plasma source of the present invention, such as a plasma source comprising an EM pump 5ka, at least one reservoir 5c, at least two electrodes (such as electrodes including dual molten metal injectors 5k61), sources of low energy hydrogen reactants (such as HOH catalysts and H sources), ignition systems including to apply voltage and current to the electrodes to form from the low energy hydrogen reactants Plasma power source 2, and MHD power converter. In an embodiment, the ignition system may include a voltage and current source, such as a DC power supply, and a set of capacitors for delivering pulsed ignition with high current pulse capacity. In a dual molten metal injector embodiment, current flows through the injected molten metal stream to ignite the plasma when the streams are connected. The components of the MHD power system including the low energy hydrogen reactive plasma source and the MHD converter may include at least one of an anti-oxidation material (such as an anti-oxidation metal), a metal including an anti-oxidation coating, and a ceramic, so that the system can be operated in air in operation.

功率轉換器或輸出系統可包含:包含連接至容器之噴嘴的磁流體動力(MHD)轉換器、磁流體動力通道、電極、磁體、金屬收集系統、金屬再循環系統、熱交換器及視情況選用之氣體再循環系統。在一些實施例中,熔融金屬可包含銀。在具有磁流體動力轉換器之實施例中,磁流體動力轉換器可傳送氧氣以在與熔融金屬流中之銀相互作用後形成銀粒子奈米粒子(例如,在分子體系中具有諸如小於約10 nm或小於約1 nm之大小),其中銀奈米粒子經由磁流體動力噴嘴加速以賦予由反應產生之功率的動能庫存。反應物供應系統可供應氧氣且控制氧氣至轉換器之傳送。在各種實施中,銀奈米粒子之動能庫存之至少一部分在磁流體動力通道中轉換成電能。電能之此版本可引起奈米粒子之聚結。奈米粒子可聚結為熔融金屬,其至少部分吸收磁流體動力轉換器之冷凝區段(在本文中亦被稱作MHD冷凝區段)中的氧,且包含所吸收氧之熔融金屬藉由金屬再循環系統返回至噴射器儲集器。在一些實施例中,氧可藉由容器中之電漿自金屬釋放。在一些實施例中,電漿保持在磁流體動力通道及金屬收集系統中以增強熔融金屬對氧之吸收。The power converter or output system may include: a magnetohydrodynamic (MHD) converter including a nozzle connected to the vessel, magnetohydrodynamic channels, electrodes, magnets, metal collection systems, metal recirculation systems, heat exchangers, and optional gas recirculation system. In some embodiments, the molten metal may contain silver. In an embodiment with a magnetohydrodynamic converter, the magnetohydrodynamic converter can deliver oxygen to form silver particles nanoparticles (eg, with a molecular weight such as less than about 10 in a molecular system) upon interaction with silver in the molten metal stream nm or less than about 1 nm in size) in which the silver nanoparticles are accelerated through a magnetohydrodynamic nozzle to impart a kinetic energy inventory of the power generated by the reaction. The reactant supply system can supply oxygen and control the delivery of oxygen to the converter. In various implementations, at least a portion of the kinetic energy inventory of silver nanoparticles is converted into electrical energy in a magnetohydrodynamic channel. This version of electrical energy can cause agglomeration of nanoparticles. Nanoparticles can coalesce into molten metal that at least partially absorbs oxygen in the condensation section (also referred to herein as the MHD condensation section) of the magnetohydrodynamic converter, and the molten metal comprising the absorbed oxygen is The metal recirculation system returns to the ejector reservoir. In some embodiments, oxygen may be released from the metal by the plasma in the container. In some embodiments, the plasma is held in the magnetohydrodynamic channel and metal collection system to enhance the absorption of oxygen by the molten metal.

為避免MHD電極藉由熔融金屬蒸汽電短路,電極304 (圖1)可包含導體,其各自安裝於電絕緣體覆蓋之傳導柱305上,該傳導柱充當引線305a之支座且可進一步充當電極與發電機通道308之壁的間隔物。電極304可經分段且可包含陰極302及陽極303。除支座305以外,電極可自由地懸浮於發電機通道308中。沿著豎直軸線間隔之電極可足以防止熔融金屬短路。電極可包含耐火導體,諸如W、Ta、Re或Mo。引線305a可連接至可藉由耐火絕緣體(諸如BN)而絕緣之電線。電線可在可包含金屬之MHD匯流條饋通凸緣301處穿透通道的線束中接合。在MHD轉換器外部,線束可連接至功率合併器及反相器。在實施例中,MHD電極304包含諸如液體銀電極之液體電極。在實施例中,點火系統可包含液體電極。點火系統可為DC或AC。反應器可包含陶瓷,諸如石英、氧化鋁、氧化鋯、氧化鉿或派熱克斯玻璃。液體電極可包含陶瓷熔塊,其可進一步包含裝載有諸如銀之熔融金屬的微型孔。To avoid electrical shorting of the MHD electrodes by molten metal vapor, electrodes 304 (FIG. 1) may include conductors, each mounted on an electrical insulator covered conductive post 305, which acts as a support for lead 305a and may further act as an electrode and Spacers for the walls of generator channel 308. Electrode 304 can be segmented and can include cathode 302 and anode 303 . With the exception of the support 305, the electrodes are freely suspended in the generator channel 308. Electrodes spaced along the vertical axis may be sufficient to prevent shorting of the molten metal. The electrodes may comprise refractory conductors such as W, Ta, Re or Mo. Lead 305a can be connected to a wire that can be insulated by a refractory insulator such as BN. Wires can be joined in a wire harness that penetrates the channel at the MHD bus bar feedthrough flange 301, which may contain metal. Outside the MHD converter, wiring harnesses can be connected to power combiners and inverters. In an embodiment, the MHD electrodes 304 comprise liquid electrodes such as liquid silver electrodes. In an embodiment, the ignition system may include a liquid electrode. The ignition system can be DC or AC. The reactor may contain ceramics such as quartz, alumina, zirconia, hafnium oxide, or Pyrex glass. The liquid electrode may comprise a ceramic frit, which may further comprise micropores loaded with molten metal such as silver.

熔融金屬流產生 在諸如圖2及圖3中所示之實施例的實施例中,SunCell®包含兩個儲集器5c,該等儲集器各自包含電磁(EM)泵(諸如本發明之DC、AC或另一EM泵)及亦充當點火電極之噴射器;及用於調平儲集器中之熔融金屬位準的儲集器進水升管。熔融金屬可包含銀、銀銅合金、鎵、鎵合金或本發明中之另一金屬。SunCell®可進一步包含反應單元腔室5b31、在儲集器與反應單元腔室之間的電隔離凸緣(諸如電隔離Conflat凸緣),及在每一儲集器頂部處之滴液邊緣以將儲集器與EM泵彼此電隔離,其中點火電流在兩個EM泵噴射器之相交熔融金屬流接觸的情況下流動。在實施例中,每一儲集器5c、反應單元腔室5b31及EM泵管5k6之內部中之至少一者塗佈有陶瓷或包含陶瓷襯裡,諸如以下中之一者:BN、石英、二氧化鈦、氧化鋁、氧化釔、氧化鉿、氧化鋯、碳化矽或諸如TiO2 -Yr2 O3 -Al2 O3 之混合物或本發明中之另一者。在一實施例中,SunCell®進一步包含外部電阻性加熱器,諸如加熱線圈,諸如包裹在至少一個SunCell®組件之外表面上的Kanthal電線。在實施例中,SunCell之諸如反應單元5b3、儲集器5c及EM泵管5k6的至少一個組件之外表面塗佈有陶瓷以電隔離電阻性加熱器線圈,諸如包裹在表面上之Kanthal電線。在一實施例中,SunCell®可進一步包含可包裹於至少一個SunCell®組件之表面上的熱交換器及隔熱體中之至少一者。熱交換器及加熱器中之至少一者可包覆於隔熱體中。 The flow of molten metal is produced in embodiments such as those shown in Figures 2 and 3, the SunCell® comprises two reservoirs 5c, each comprising an electromagnetic (EM) pump (such as the DC of the present invention) , AC or another EM pump) and an injector that also acts as an ignition electrode; and a reservoir inlet riser for leveling the molten metal level in the reservoir. The molten metal may comprise silver, silver copper alloys, gallium, gallium alloys, or another metal in the present invention. SunCell® may further comprise a reaction cell chamber 5b31, an electrically isolating flange (such as an electrically isolating Conflat flange) between the reservoir and the reaction cell chamber, and a drip edge at the top of each reservoir to The reservoir and EM pump are electrically isolated from each other, with ignition current flowing in contact with the intersecting molten metal streams of the two EM pump injectors. In an embodiment, at least one of the interior of each reservoir 5c, reaction cell chamber 5b31 and EM pump tube 5k6 is coated with a ceramic or includes a ceramic lining, such as one of the following: BN, quartz, titanium dioxide , alumina, yttria, hafnia, zirconia, silicon carbide, or a mixture such as TiO 2 -Yr 2 O 3 -Al 2 O 3 or the other of the present invention. In one embodiment, the SunCell® further comprises an external resistive heater, such as a heating coil, such as Kanthal wire wrapped on the outer surface of at least one SunCell® component. In an embodiment, at least one of the SunCell's outer surfaces, such as reaction unit 5b3, reservoir 5c, and EM pump tubing 5k6, is coated with ceramic to electrically isolate resistive heater coils, such as Kanthal wires wrapped on the surface. In one embodiment, the SunCell® can further comprise at least one of a heat exchanger and an insulator that can be wrapped on the surface of the at least one SunCell® component. At least one of the heat exchanger and the heater may be encased in the thermal insulator.

在實施例中,電阻性加熱器可包含用於諸如加熱絲之加熱元件的支撐件。支撐件可包含經氣密密封之碳。密封劑可包含諸如SiC的陶瓷。SiC可藉由Si與碳在高溫下在真空爐中之反應而形成。In an embodiment, the resistive heater may include a support for a heating element such as a heating wire. The support may comprise hermetically sealed carbon. The encapsulant may contain a ceramic such as SiC. SiC can be formed by the reaction of Si and carbon at high temperature in a vacuum furnace.

SunCell®加熱器415可為電阻性加熱器或電感耦合加熱器。例示性SunCell®加熱器415包含Kanthal A-1 (Kanthal)電阻性加熱電線、能夠操作至多1400℃之溫度且具有較高電阻率及良好抗氧化性之鐵磁體-鉻-鋁合金(FeCrAl合金)。用於合適加熱元件之額外FeCrAl合金為Kanthal APM、Kanthal AF、Kanthal D及Alkrothal中之至少一者。諸如電阻性電線元件之加熱元件可包含可在1100℃至1200℃範圍內操作的NiCr合金,諸如Nikrothal 80、Nikrothal 70、Nikrothal 60及Nikrothal 40中之至少一者。替代地,加熱器415可包含能夠在氧化氣氛中在1500℃至1800℃範圍內操作的二矽化鉬(MoSi2 ),諸如Kanthal Super 1700、Kanthal Super 1800、Kanthal Super 1900、Kanthal Super RA、Kanthal Super ER、Kanthal Super HT及Kanthal Super NC中之至少一者。加熱元件可包含用氧化鋁合金化之二矽化鉬(MoSi2)。加熱元件可具有諸如氧化鋁塗層之抗氧化塗層。電阻性加熱器415之加熱元件可包含可能夠在至多1625℃的溫度下操作之SiC。The SunCell® heater 415 can be a resistive heater or an inductively coupled heater. Exemplary SunCell® heater 415 includes Kanthal A-1 (Kanthal) resistive heating wire, a ferromagnetic-chromium-aluminum alloy (FeCrAl alloy) capable of operating temperatures up to 1400°C with high resistivity and good oxidation resistance . Additional FeCrAl alloys for suitable heating elements are at least one of Kanthal APM, Kanthal AF, Kanthal D and Alkrothal. Heating elements, such as resistive wire elements, may comprise NiCr alloys, such as at least one of Nikrothal 80, Nikrothal 70, Nikrothal 60, and Nikrothal 40, operable in the range of 1100°C to 1200°C. Alternatively, the heater 415 may comprise two molybdenum silicide (MoSi 2) capable of operating in the range of 1500 to 1800 ℃ deg.] C in an oxidizing atmosphere, such as a Kanthal Super 1700, Kanthal Super 1800, Kanthal Super 1900, Kanthal Super RA, Kanthal Super At least one of ER, Kanthal Super HT and Kanthal Super NC. The heating element may comprise molybdenum disilicide (MoSi2) aluminum oxide. The heating element may have an anti-oxidative coating such as an alumina coating. The heating elements of resistive heater 415 may comprise SiC that may be capable of operating at temperatures up to 1625°C.

在實施例中,SunCell®可進一步包含熔融金屬溢流系統,諸如包含以下各者之熔融金屬溢流系統:溢流槽、至少一個泵、單元熔融金屬庫存感測器、熔融金屬庫存控制器、加熱器、溫度控制系統,及熔融金屬庫存,其用以根據如藉由至少一個感測器及控制器所判定的需要而儲存及供應熔融金屬至SunCell®。溢流系統之熔融金屬庫存控制器可包含本發明之熔融金屬位準控制器,諸如進水升管及EM泵。溢流系統可包含MHD回流管310、傳回儲集器311、傳回EM泵312及傳回EM泵管313中之至少一者。In an embodiment, the SunCell® may further comprise a molten metal overflow system, such as a molten metal overflow system comprising an overflow tank, at least one pump, a unit molten metal inventory sensor, a molten metal inventory controller, A heater, a temperature control system, and a molten metal inventory for storing and supplying molten metal to SunCell® according to needs as determined by at least one sensor and controller. The molten metal inventory controller of the overflow system may include the molten metal level controller of the present invention, such as the inlet riser and the EM pump. The overflow system may include at least one of MHD return line 310 , return reservoir 311 , return EM pump 312 , and return EM pump line 313 .

電磁泵可各自包含用於液體金屬之兩種主要類型之電磁泵中之一者:AC或DC傳導泵,其中跨越包含液體金屬之管建立AC或DC磁場,且AC或DC電流經由分別連接至管壁之電極饋送至液體;及感應泵,其中行波場誘發如在感應電機中之所需電流,其中電流可與所施加AC電磁場交叉。感應泵可包含三種主要形式:環形線性、扁平線性及螺旋。泵可包含此項技術中已知之其他泵,諸如機械及熱電泵。機械泵可包含具有電機驅動葉輪之離心泵。至電磁泵之功率可為恆定的或脈衝式的,以分別引起熔融金屬之對應恆定或脈衝式噴射。脈衝式噴射可由程式或函數產生器驅動。脈衝式噴射可保持反應單元腔室中之脈衝式電漿。The electromagnetic pumps may each comprise one of the two main types of electromagnetic pumps for liquid metals: AC or DC conduction pumps, in which an AC or DC magnetic field is established across a tube containing the liquid metal, and an AC or DC current is connected via, respectively, to Electrodes on the wall of the tube feed the liquid; and an induction pump, where the traveling wave field induces the desired current as in an induction motor, where the current can intersect the applied AC electromagnetic field. Induction pumps can come in three main forms: annular linear, flat linear, and helical. Pumps may include other pumps known in the art, such as mechanical and thermoelectric pumps. Mechanical pumps may include centrifugal pumps with motor-driven impellers. The power to the electromagnetic pump may be constant or pulsed to cause a corresponding constant or pulsed injection of molten metal, respectively. Pulse jets can be driven by program or function generators. The pulsed jet maintains the pulsed plasma in the reaction cell chamber.

在實施例中,EM泵管5k6包含引起間歇或脈衝式熔融金屬噴射之斷流器。斷流器可包含閥,諸如電子控制閥,其進一步包含控制器。閥可包含電磁閥。替代地,斷流器可包含具有至少一個通道之旋轉圓盤,該通道週期性地旋轉以與熔融金屬流相交以允許熔融金屬流過通道,其中該流被不包含通道之旋轉圓盤之區段阻擋。In an embodiment, the EM pump tube 5k6 contains a flow interrupter that causes intermittent or pulsed molten metal injection. The interrupter may include a valve, such as an electronically controlled valve, which further includes a controller. The valve may comprise a solenoid valve. Alternatively, the interrupter may comprise a rotating disk having at least one channel that rotates periodically to intersect the flow of molten metal to allow molten metal to flow through the channel, wherein the flow is blocked by the region of the rotating disk that does not contain the channel segment block.

熔融金屬泵可包含移動磁體泵(MMP)。例示性商業AC EM泵為CMI Novacast CA15,其中加熱及冷卻系統可經修改以支援泵抽熔融銀。The molten metal pump may comprise a moving magnet pump (MMP). An exemplary commercial AC EM pump is the CMI Novacast CA15, where the heating and cooling system can be modified to support pumping molten silver.

在一實施例(圖4至圖22)中,EM泵400可包含AC感應型,其中銀上之勞侖茲力由通過銀之時變電流及交叉同步時變磁場產生。通過銀之時變電流可由第一時變磁場之法拉弟感應產生,該第一時變磁場由EM泵變壓器繞組電路401a產生。第一時變磁場之源可包含初級變壓器繞組401,且銀可充當次級變壓器繞組,諸如單匝短路繞組,其包含電流迴路之EM泵管區段405及EM泵電流迴路傳回區段406。初級繞組401可包含AC電磁體,其中第一時變磁場通過銀周向迴路405及406、感應電流迴路藉由磁性電路或EM泵變壓器磁軛402來傳導。銀可包含於諸如陶瓷容器405及406之容器中,諸如包含本發明之陶瓷的容器,諸如氮化矽(MP 1900℃)、石英、氧化鋁、氧化鋯、氧化鎂或氧化鉿。保護性SiO2 層可在亞硝酸矽上藉由受控鈍化氧化來形成。容器可包含圍封磁性電路或EM泵變壓器磁軛402之通道405及406。容器可包含扁平區段405以使得感應電流具有在垂直方向上流動至同步時變磁場及根據對應勞侖茲力之泵流動所需方向之組分。交叉同步時變磁場可藉由包含AC電磁體403及EM泵電磁磁軛404之EM泵電磁電路或總成403c來產生。磁性磁軛404在包含銀之容器405之扁平區段處可具有間隙。EM泵變壓器繞組電路401a之電磁體401及EM泵電磁總成403c之電磁體403可由單相AC電源或此項技術中已知的其他合適電源供電。磁體可接近於迴路彎曲部定位以使得存在所需電流向量組分。供電變壓器繞組401及電磁體繞組403之AC電流的相位可同步以保持勞侖茲泵抽力之所需方向。用於變壓器繞組401及電磁體繞組403之電源供應器可為相同或單獨電源。感應電流及B場之同步可經由類比構件(諸如延遲線組件)或藉由數位構件進行,兩者在此項技術中均已知。在一實施例中,EM泵可包含具有複數個磁軛之單個變壓器,以提供閉合電流迴路405及406兩者中之電流之感應且充當電磁體403及磁軛404。由於使用單個變壓器,對應感應電流及AC磁場可同相。In one embodiment (FIGS. 4-22), the EM pump 400 may comprise an AC inductive type, where the Lorentz force on silver is generated by a time-varying current through the silver and a cross-synchronized time-varying magnetic field. The time-varying current through the silver can be generated by Faraday induction of the first time-varying magnetic field generated by the EM pump transformer winding circuit 401a. The source of the first time-varying magnetic field may include a primary transformer winding 401, and silver may serve as a secondary transformer winding, such as a single-turn short-circuit winding, which includes the EM pump tube section 405 of the current loop and the EM pump current loop return section 406. The primary winding 401 may comprise an AC electromagnet with a first time-varying magnetic field conducted through silver circumferential loops 405 and 406 , an induced current loop through a magnetic circuit or an EM pump transformer yoke 402 . Silver may be contained in containers such as ceramic containers 405 and 406, such as containers comprising ceramics of the present invention, such as silicon nitride (MP 1900°C), quartz, alumina, zirconia, magnesia, or hafnium oxide. SiO 2 protective layer may be controlled by passivating oxide formed on the silicon nitrite. The container may include channels 405 and 406 that enclose the magnetic circuit or EM pump transformer yoke 402 . The vessel may include flat sections 405 such that the induced current has components that flow in the vertical direction to a synchronous time-varying magnetic field and the desired direction of pump flow according to the corresponding Lorentz force. The cross-synchronized time-varying magnetic field can be generated by an EM pump electromagnetic circuit or assembly 403c including an AC electromagnet 403 and an EM pump electromagnetic yoke 404. The magnetic yoke 404 may have a gap at the flat section of the vessel 405 containing silver. The electromagnet 401 of the EM pump transformer winding circuit 401a and the electromagnet 403 of the EM pump solenoid assembly 403c may be powered by a single phase AC power source or other suitable power source known in the art. The magnets can be positioned close to the loop bends so that the desired current vector components are present. The phases of the AC currents of the supply transformer winding 401 and the electromagnet winding 403 can be synchronized to maintain the desired direction of the Lorentz pumping force. The power supplies for the transformer windings 401 and the electromagnet windings 403 can be the same or separate power supplies. Synchronization of induced currents and B-fields can be done via analog means, such as delay line elements, or by digital means, both of which are known in the art. In one embodiment, the EM pump may include a single transformer with multiple yokes to provide induction of current in both closed current loops 405 and 406 and act as electromagnet 403 and yoke 404 . Since a single transformer is used, the corresponding induced current and AC magnetic field can be in phase.

在實施例(圖2至圖22)中,感應電流迴路可包含入口EM泵管5k6、電流迴路之EM泵管區段405、出口EM泵管5k6以及通過儲集器5c中之銀的路徑,該儲集器可包含包含此等組件之實施例中之進水升管5qa及噴射器561的壁。EM泵可包含監測及控制系統,諸如用於初級繞組之電流及電壓及使用泵抽參數回饋控制SunCell功率產生之監測及控制系統。例示性量測回饋參數可為反應單元腔室5b31處之溫度及MHD轉換器處之電力。監測及控制系統可包含對應感測器、控制器及電腦。在一實施例中,SunCell®可由諸如蜂巢式電話之無線裝置監測及控制中之至少一種。SunCell®可包含天線以發送及接收資料及控制信號。In an embodiment (FIGS. 2-22), the induced current loop may comprise an inlet EM pump tube 5k6, an EM pump tube section 405 of the current loop, an outlet EM pump tube 5k6, and a path through the silver in the reservoir 5c, which The reservoir may include the walls of the inlet riser 5qa and the eductor 561 in embodiments containing these components. The EM pump may include monitoring and control systems, such as monitoring and control systems for primary winding current and voltage and controlling SunCell power generation using pumping parameter feedback. Exemplary measured feedback parameters may be the temperature at the reaction unit chamber 5b31 and the power at the MHD converter. The monitoring and control system may include corresponding sensors, controllers and computers. In one embodiment, the SunCell® can be at least one of monitored and controlled by a wireless device such as a cellular phone. SunCell® may contain antennas to send and receive data and control signals.

在熔融金屬噴射器包含至少一個EM泵(其包含電流源及磁體以產生勞侖茲泵抽力)之實施例中,EM泵磁體5k4可包含永久性或電磁體,諸如DC或AC電磁體。在磁體為永久磁體或DC電磁體之情況下,EM泵電流源包含DC電源。在磁體5k4包含AC電磁體之情況下,用於EM匯流條5k2之EM泵電流源包含AC電源,該AC電源提供與施加至EM泵管5k6以產生勞侖茲泵抽力之AC EM泵電磁體場同相的電流。在諸如電磁體之磁體浸沒於腐蝕性冷卻劑(諸如水浴)中之實施例中,諸如電磁體之磁體可氣密密封於諸如熱塑性塑膠之密封劑、塗層或可為非磁性之殼體,諸如不鏽鋼殼體中。In embodiments where the molten metal injector includes at least one EM pump that includes a current source and a magnet to generate the Lorentz pumping force, the EM pump magnet 5k4 may include a permanent or electromagnet, such as a DC or AC electromagnet. Where the magnets are permanent magnets or DC electromagnets, the EM pump current source includes a DC power source. Where the magnet 5k4 comprises an AC electromagnet, the EM pump current source for the EM bus bar 5k2 comprises an AC power supply that provides and applies the AC EM pump solenoid that is applied to the EM pump tube 5k6 to generate the Lorentz pumping force Currents in the body field in phase. In embodiments in which a magnet such as an electromagnet is immersed in a corrosive coolant such as a water bath, the magnet such as an electromagnet may be hermetically sealed in a sealant such as a thermoplastic, a coating, or a housing that may be non-magnetic, such as stainless steel housings.

EM泵可包含多級泵(圖6至圖21)。多級EM泵可在各自對應於基本上僅允許向前熔融金屬流離開EM泵出口及噴射器5k61之壓力之不同泵級處接收輸入金屬流,諸如來自MHD回流管310之輸入金屬流及來自儲集器5c之基底的輸入金屬流。在實施例中,多級EM泵總成400a (圖6)包含至少一個EM泵變壓器繞組電路401a且進一步包含至少一個AC EM泵電磁電路403c,該EM泵變壓器繞組電路包含穿過感應電流迴路405及406之變壓器繞組401及變壓器磁軛402,該AC EM泵電磁電路包含AC電磁體403及EM泵電磁磁軛404。感應電流迴路可包含EM泵管區段405及EM泵電流迴路傳回區段406。電磁磁軛404在包含諸如銀之泵抽熔融金屬之電流迴路405的容器或EM泵管區段之扁平區段處可具有間隙。在圖7中所示之實施例中,包含EM泵管區段405之感應電流迴路可具有自用於區段406中之回流的彎曲部偏移定位之入口及出口,以使得感應電流可更加橫向於電磁體403a及403b之磁通量以優化橫向於電流及磁通量兩者之勞侖茲泵抽力。經泵抽金屬可在區段405中熔融且在EM泵電流迴路傳回區段406中為固態。The EM pump may comprise a multi-stage pump (FIGS. 6-21). The multi-stage EM pump may receive input metal streams, such as the input metal stream from the MHD return line 310 and the input metal stream from the MHD return line 310, at different pump stages each corresponding to a pressure that substantially only allows forward molten metal flow to exit the EM pump outlet and injector 5k61. Input metal flow to the base of reservoir 5c. In an embodiment, the multi-stage EM pump assembly 400a (FIG. 6) includes at least one EM pump transformer winding circuit 401a and further includes at least one AC EM pump electromagnetic circuit 403c, the EM pump transformer winding circuit including through the induced current loop 405 and 406 of the transformer winding 401 and the transformer yoke 402, the AC EM pump electromagnetic circuit includes an AC electromagnet 403 and an EM pump electromagnetic yoke 404. The induced current loop may include the EM pump tube section 405 and the EM pump current loop return section 406 . The electromagnetic yoke 404 may have a gap at the flat section of the vessel or EM pump tube section containing the current loop 405 that pumps molten metal such as silver. In the embodiment shown in FIG. 7, the induced current loop including the EM pump tube section 405 may have an inlet and outlet positioned offset from the bend for return flow in section 406 so that the induced current may be more transverse to the The magnetic flux of the electromagnets 403a and 403b to optimize the Lorentz pumping force transverse to both the current and the magnetic flux. The pumped metal may be molten in section 405 and solid in the EM pump current loop return section 406 .

在實施例中,多級EM泵可包含供應垂直於電流及金屬流兩者之磁通量之複數個AC EM泵電磁電路403c。多級EM泵可沿著電流迴路405之EM泵管區段在入口壓力適於局部泵壓之位置處接收入口,以達成向前泵流,其中壓力在下一AC EM泵電磁電路403c階段增大。在例示性實施例中,MHD回流管310在包含AC電磁體403a及EM泵電磁磁軛404a之第一AC電磁體電路403c之前的入口處進入電流迴路,諸如電流迴路405之EM泵管區段。來自儲集器5c之入口流可在第一AC電磁體電路403c之前及在第二AC電磁體電路之後進入,該等AC電磁體電路包含AC電磁體403b及EM泵電磁磁軛404b,其中泵保持電流迴路405中之熔融金屬壓力,該熔融金屬壓力保持來自每一入口之所需流至下一泵級或至泵出口及噴射器5k61。每一泵級之壓力可藉由控制AC電磁體電路之對應AC電磁體的電流來控制。例示性變壓器包含矽鋼層壓變壓器芯402,且例示性EM泵電磁磁軛404a及404b各自包含層壓矽鋼(晶粒定向鋼)薄片堆疊。In an embodiment, a multi-stage EM pump may include a plurality of AC EM pump electromagnetic circuits 403c that supply magnetic flux perpendicular to both current and metal flow. The multi-stage EM pump may receive an inlet along the EM pump tube section of the current loop 405 at a location where the inlet pressure is suitable for local pumping to achieve forward pump flow, with pressure increasing at the next AC EM pump solenoid circuit 403c stage. In an exemplary embodiment, the MHD return line 310 enters a current loop, such as the EM pump tube section of the current loop 405, at the entrance before the first AC electromagnet circuit 403c including the AC electromagnet 403a and the EM pump solenoid yoke 404a. Inlet flow from reservoir 5c may enter before the first AC electromagnet circuit 403c and after the second AC electromagnet circuit including the AC electromagnet 403b and the EM pump electromagnetic yoke 404b, where the pump The molten metal pressure in the current loop 405 is maintained which maintains the desired flow from each inlet to the next pump stage or to the pump outlet and injector 5k61. The pressure of each pump stage can be controlled by controlling the current to the corresponding AC electromagnet of the AC electromagnet circuit. The exemplary transformer includes a silicon steel laminated transformer core 402, and the exemplary EM pump electromagnetic yokes 404a and 404b each include a laminated silicon steel (grain oriented steel) sheet stack.

在實施例中,諸如陶瓷通道之EM泵電流迴路傳回區段406可包含熔融金屬流量限制器或可用固體電導體填充以使得電流迴路之電流完整,同時防止熔融金屬自較高壓力回流至EM泵管之較低壓力區段。固體可包含諸如本發明之不鏽鋼之金屬,諸如Haynes 230、Pyromet®合金625、Carpenter L-605合金、BioDur® Carpenter CCM®合金、Haynes 230、310 SS或625 SS。固體可包含耐火金屬。固體可包含抗氧化金屬。固體可包含諸如銥之金屬或導電頂蓋層或塗層以避免固體導體之氧化。In an embodiment, the EM pump current loop return section 406, such as a ceramic channel, may include a molten metal flow restrictor or may be filled with a solid electrical conductor to complete the current flow of the current loop while preventing molten metal from flowing back to the EM from higher pressures The lower pressure section of the pump tubing. The solid may comprise a metal such as the stainless steel of the present invention, such as Haynes 230, Pyromet® alloy 625, Carpenter L-605 alloy, BioDur® Carpenter CCM® alloy, Haynes 230, 310 SS or 625 SS. The solids may contain refractory metals. The solids may contain antioxidant metals. The solid may contain a metal such as iridium or a conductive capping layer or coating to avoid oxidation of the solid conductor.

在一實施例中,提供傳回電流路徑但阻止銀黑色流動之導管406中的固體導體包含固體熔融金屬,諸如固體銀。固體銀可藉由在沿著導管406之路徑的一或多個位置處將溫度保持為低於銀的熔點以使得其在導管406之至少一部分中保持固體狀態以阻止銀在導管406中流動來保持。導管406可包含缺乏痕量加熱或絕緣之熱交換器(諸如冷卻劑迴路)及遠離熱區段405之區段中的至少一者,以使得導管406之至少一部分的溫度可保持為低於熔融金屬之熔點。In one embodiment, the solid conductor in conduit 406 that provides a return current path but prevents the flow of silver black comprises solid molten metal, such as solid silver. Solid silver may be prevented by maintaining the temperature below the melting point of silver at one or more locations along the path of the conduit 406 such that it remains solid in at least a portion of the conduit 406 to prevent the flow of silver in the conduit 406 Keep. Conduit 406 may include at least one of a heat exchanger lacking trace heating or insulation, such as a coolant loop, and a section remote from hot section 405 so that the temperature of at least a portion of conduit 406 may be maintained below melting The melting point of the metal.

諸如MHD回流管310、EM泵儲集器管線416及EM泵噴射管線417中之至少一者的至少一個管線(圖9至圖21)可藉由諸如電阻性或電感耦合加熱器之加熱器來加熱。SunCell可進一步包含:固定諸如MHD磁體殼體306a、MHD噴嘴307及MHD通道308之組件之結構支撐件418,電輸出,感測器,及可安裝在結構支撐件418及諸如EM泵儲集器管線416及EM泵噴射管線417周圍之420的熱屏蔽上之控制管線419。At least one line (FIGS. 9-21) such as at least one of MHD return line 310, EM pump reservoir line 416, and EM pump injection line 417 may be provided by heaters such as resistive or inductively coupled heaters. heating. SunCell may further include: Structural supports 418 that hold components such as MHD magnet housing 306a, MHD nozzles 307, and MHD channels 308, electrical outputs, sensors, and may be mounted on structural supports 418 and reservoirs such as EM pumps Control line 419 on heat shield 420 around line 416 and EM pump injection line 417.

在另一實施例中,點火系統包含感應系統(圖8至圖21),其中電源施加至導電熔融金屬以使得低能量氫反應之點火提供感應電流、電壓及功率。點火系統可包含無電極系統,其中點火電流藉由通過感應點火變壓器總成410之感應來施加。感應電流可流過來自藉由諸如EM泵400之泵保持之複數個噴射器的相交熔融金屬流。在實施例中,儲集器5c可進一步包含陶瓷交接通道414,諸如儲集器5c之基底之間的通道。感應點火變壓器總成410可包含感應點火變壓器繞組411及感應點火變壓器磁軛412,該感應點火變壓器磁軛可延伸穿過由儲集器5c、來自複數個熔融金屬噴射器之相交熔融金屬流及交接通道414形成的感應電流迴路。感應點火變壓器總成410可與EM泵變壓器繞組電路401a之感應點火變壓器總成類似。In another embodiment, the ignition system includes an induction system (FIGS. 8-21) in which a power source is applied to the conductive molten metal such that ignition of the low energy hydrogen reaction provides induced current, voltage and power. The ignition system may include an electrodeless system in which the ignition current is applied by induction through the induction ignition transformer assembly 410 . Induced current may flow through intersecting streams of molten metal from a plurality of injectors held by pumps such as EM pump 400 . In an embodiment, the reservoir 5c may further comprise a ceramic interface channel 414, such as a channel between the bases of the reservoir 5c. The inductive ignition transformer assembly 410 may include an inductive ignition transformer winding 411 and an inductive ignition transformer yoke 412 that may extend through the reservoir 5c, the intersecting streams of molten metal from a plurality of molten metal injectors, and The induced current loop formed by the crossover channel 414 . The inductive ignition transformer assembly 410 may be similar to the inductive ignition transformer assembly of the EM pump transformer winding circuit 401a.

在實施例中,點火電流源可包含AC感應型,其中諸如銀之熔融金屬中之電流由通過銀的時變磁場之法拉弟感應產生。時變磁場之源可包含初級變壓器繞組、感應點火變壓器繞組411,且銀可至少部分充當次級變壓器繞組,諸如單匝短路繞組。初級繞組411可包含AC電磁體,其中感應點火變壓器磁軛412通過包含熔融銀之周向傳導迴路來傳導時變磁場。在一實施例中,感應點火系統可包含複數個閉合磁性迴路磁軛412,其經由包含熔融銀電路之次級繞組保持時變通量。至少一個磁軛及對應磁性電路可包含繞組411,其中各自具有繞組411之複數個磁軛412之添加劑通量可同時產生感應電流及電壓。可選擇每一磁軛412及繞組411之初級繞組匝數以自應用於每一繞組之匝數獲得所要二次電壓,且所要二次電流可藉由選擇閉合迴路磁軛412與對應繞組411之數目來獲得,其中電壓獨立於磁軛及繞組之數目,且添加並聯電流。In an embodiment, the ignition current source may comprise an AC inductive type in which the current in a molten metal such as silver is generated by Faraday induction through a time-varying magnetic field of silver. The source of the time-varying magnetic field may include the primary transformer winding, the inductive ignition transformer winding 411, and the silver may serve at least in part as a secondary transformer winding, such as a single-turn short-circuit winding. The primary winding 411 may comprise an AC electromagnet, with the induction ignition transformer yoke 412 conducting the time-varying magnetic field through a circumferential conducting loop comprising molten silver. In one embodiment, the inductive ignition system may include a plurality of closed magnetic loop yokes 412 that maintain a time-varying flux through secondary windings including molten silver circuits. At least one yoke and corresponding magnetic circuit can include windings 411, wherein the additive flux of the plurality of yokes 412, each having a winding 411, can induce current and voltage simultaneously. The number of primary winding turns of each yoke 412 and winding 411 can be selected to obtain the desired secondary voltage from the number of turns applied to each winding, and the desired secondary current can be obtained by selecting the closed loop yoke 412 and the corresponding winding 411. number is obtained, where the voltage is independent of the number of yokes and windings, and a parallel current is added.

在一實施例中,加熱器415可包含電阻性加熱器,諸如包含諸如Kanthal或本發明之另一者的電線的電阻性加熱器。電阻性加熱器可包含可包裹於待加熱組件周圍之耐火電阻性長絲或電線。例示性電阻性加熱器元件及組件可包含高溫導體,諸如碳、鎳鉻合金、300系列不鏽鋼、英高合金800及英高鎳600、601、718、625、Haynes 230、188、214、鎳、赫史特合金C、鈦、鉭、鉬、TZM、錸、鈮及鎢。長絲或電線可罐封於罐封化合物中以保護其免受氧化。加熱元件(如長絲、電線或網狀物)可在真空中操作以保護其免受氧化。例示性加熱器包含Kanthal A-1 (Kanthal)電阻性加熱電線、能夠操作至多1400℃之溫度且具有較高電阻率及良好抗氧化性之鐵磁體-鉻-鋁合金(FeCrAl合金)。另一例示性長絲為形成非縮放氧化物塗層之Kanthal APM,該氧化物塗層對氧化及碳化環境具有抗性且可操作至1475℃。1375 K及1發射率下之熱損耗率為200 kW/m2 或0.2 W/m2 。操作至1475 K之市售電阻性加熱器具有4.6 W/m2 之功率。可使用加熱元件外部之絕緣體來增大發熱。In one embodiment, heater 415 may comprise a resistive heater, such as a resistive heater comprising wires such as Kanthal or another of the present invention. Resistive heaters may include refractory resistive filaments or wires that may be wrapped around the elements to be heated. Exemplary resistive heater elements and assemblies may include high temperature conductors such as carbon, nichrome, 300 series stainless steel, Inconel 800 and Inconel 600, 601, 718, 625, Haynes 230, 188, 214, nickel, Hearst Alloy C, Titanium, Tantalum, Molybdenum, TZM, Rhenium, Niobium and Tungsten. Filament or wire can be potted in potting compound to protect it from oxidation. Heating elements such as filaments, wires or mesh can be operated in a vacuum to protect them from oxidation. Exemplary heaters include Kanthal A-1 (Kanthal) resistive heating wire, a ferromagnetic-chromium-aluminum alloy (FeCrAl alloy) capable of operating temperatures up to 1400°C and having high resistivity and good oxidation resistance. Another exemplary filament is Kanthal APM that forms a non-scaled oxide coating that is resistant to oxidizing and carbonizing environments and operable to 1475°C. The heat loss rate at 1375 K and 1 emissivity is 200 kW/m 2 or 0.2 W/m 2 . 1475 K to commercial operation of the resistive heater having 4.6 W / m 2 of power. Heat generation can be increased by using an insulator on the outside of the heating element.

例示性加熱器415包含Kanthal A-1 (Kanthal)電阻性加熱電線、能夠操作至多1400℃之溫度且具有較高電阻率及良好抗氧化性之鐵磁體-鉻-鋁合金(FeCrAl合金)。用於合適加熱元件之額外FeCrAl合金為Kanthal APM、Kanthal AF、Kanthal D及Alkrothal中之至少一者。諸如電阻性電線元件之加熱元件可包含可在1100℃至1200℃範圍內操作的NiCr合金,諸如Nikrothal 80、Nikrothal 70、Nikrothal 60及Nikrothal 40中之至少一者。替代地,加熱器415可包含能夠在氧化氣氛中在1500℃至1800℃範圍內操作的二矽化鉬(MoSi2 ),諸如Kanthal Super 1700、Kanthal Super 1800、Kanthal Super 1900、Kanthal Super RA、Kanthal Super ER、Kanthal Super HT及Kanthal Super NC中之至少一者。加熱元件可包含用氧化鋁合金化之二矽化鉬(MoSi2 )。加熱元件可具有諸如氧化鋁塗層之抗氧化塗層。電阻性加熱器415之加熱元件可包含可能夠在至多1625℃的溫度下操作之SiC。加熱器可包含絕緣體以增大其效率及有效性中之至少一者。絕緣體可包含諸如熟習此項技術者已知之陶瓷的陶瓷,諸如包含氧化鋁-矽酸鹽之絕緣體。絕緣體可為可移除或可逆的中之至少一者。絕緣體可在啟動之後移除以更有效地將熱傳遞至所要接收器,諸如周圍環境或熱交換器。絕緣體可機械地移除。絕緣體可包含有可能真空的腔室及泵,其中藉由抽真空應用絕緣體,且藉由添加諸如稀有氣體(諸如氦)之熱傳遞氣體使絕緣體反向。具有可添加或泵離之諸如氦之熱傳遞氣體的真空腔室可充當可調整絕緣體。Exemplary heater 415 includes Kanthal A-1 (Kanthal) resistive heating wire, a ferromagnetic-chromium-aluminum alloy (FeCrAl alloy) capable of operating at temperatures up to 1400°C and having high resistivity and good oxidation resistance. Additional FeCrAl alloys for suitable heating elements are at least one of Kanthal APM, Kanthal AF, Kanthal D and Alkrothal. Heating elements, such as resistive wire elements, may comprise NiCr alloys, such as at least one of Nikrothal 80, Nikrothal 70, Nikrothal 60, and Nikrothal 40, operable in the range of 1100°C to 1200°C. Alternatively, the heater 415 may comprise two molybdenum silicide (MoSi 2) capable of operating in the range of 1500 to 1800 ℃ deg.] C in an oxidizing atmosphere, such as a Kanthal Super 1700, Kanthal Super 1800, Kanthal Super 1900, Kanthal Super RA, Kanthal Super At least one of ER, Kanthal Super HT and Kanthal Super NC. The heating element may include use of aluminum oxide of molybdenum silicide (MoSi 2). The heating element may have an anti-oxidative coating such as an alumina coating. The heating elements of resistive heater 415 may comprise SiC that may be capable of operating at temperatures up to 1625°C. The heater may include an insulator to increase at least one of its efficiency and effectiveness. Insulators may comprise ceramics such as those known to those skilled in the art, such as insulators comprising alumina-silicates. The insulator can be at least one of removable or reversible. The insulator can be removed after start-up to more efficiently transfer heat to the desired receiver, such as the surrounding environment or a heat exchanger. The insulator can be removed mechanically. The insulator may include a chamber and a pump, possibly evacuated, where the insulator is applied by evacuation and reversed by the addition of a heat transfer gas such as a noble gas such as helium. A vacuum chamber with a heat transfer gas such as helium that can be added or pumped out can act as an adjustable insulator.

點火電流可為時變的,諸如約60 Hz AC,但可具有其他特性及波形,諸如具有在1 Hz至1 MHz、10 Hz至10 kHz、10 Hz至1 kHz及10 Hz至100 Hz之至少一個範圍內之頻率的波形,在約1 A至100 MA、10 A至10 MA、100 A至1 MA、100 A至100 kA及1 kA至100 kA之至少一個範圍內的峰值電流,以及在約1 V至1 MV、2 V至100 kV、3 V至10 kV、3 V至1 kV、2 V至100 V及3 V至30 V之至少一個範圍內的峰值電壓,其中波形可包含正弦波、方波、三角形或其他所需波形,該波形可包含諸如在1%至99%、5%至75%及10%至50%之至少一個範圍內的占空比之占空比。為了使高頻下之集膚效應最小化,點火系統之繞組(諸如411)可包含編結線、複絞線及李茲線中之至少一者。The ignition current may be time-varying, such as about 60 Hz AC, but may have other characteristics and waveforms, such as having at least a Waveforms of frequencies in a range, peak current in at least one of about 1 A to 100 MA, 10 A to 10 MA, 100 A to 1 MA, 100 A to 100 kA, and 1 kA to 100 kA, and Peak voltage in at least one of about 1 V to 1 MV, 2 V to 100 kV, 3 V to 10 kV, 3 V to 1 kV, 2 V to 100 V, and 3 V to 30 V, where the waveform may include sinusoidal wave, square wave, triangle, or other desired waveform that may include a duty cycle such as a duty cycle in at least one of a range of 1% to 99%, 5% to 75%, and 10% to 50%. To minimize skin effect at high frequencies, the windings of the ignition system, such as 411 , may include at least one of braided wire, twisted wire, and Litz wire.

在例示性MHD熱力學循環中:(i)銀奈米粒子形成於反應單元腔室中,其中奈米粒子可藉由針對分子體系中之彼等選擇熱泳及熱梯度中之至少一者來輸送;(ii)在所釋放O存在情況下之低能量氫電漿反應形成流入噴嘴入口中之高溫且高壓之25莫耳% O及70莫耳%銀奈米粒子氣體;(iii) 25莫耳% O及75莫耳%銀奈米粒子氣體經歷噴嘴膨脹,(iv)射流之所得動能在MHD通道中轉換為電力;(v)奈米粒子大小在MHD通道中增大且在MHD通道末端處聚結成銀液體,(vi)液體銀吸收25莫耳% O,及(vii)EM泵將液體混合物泵抽回至反應單元腔室。In an exemplary MHD thermodynamic cycle: (i) silver nanoparticles are formed in the reaction unit chamber, where the nanoparticles can be transported by selecting at least one of thermophoresis and thermal gradient for them in the molecular system (ii) low energy hydrogen plasma reaction in the presence of released O to form a high temperature and high pressure 25 mol % O and 70 mol % silver nanoparticle gas that flows into the nozzle inlet; (iii) 25 mol % silver nanoparticle gas % O and 75 mol% silver nanoparticle gas undergoes nozzle expansion, (iv) the resulting kinetic energy of the jet is converted to electricity in the MHD channel; (v) the nanoparticle size increases in the MHD channel and at the end of the MHD channel Coalesced into a silver liquid, (vi) the liquid silver absorbs 25 mol% O, and (vii) the EM pump pumps the liquid mixture back into the reaction cell chamber.

對於氧與銀奈米粒子之氣態混合物,自由分子體系中之氧與銀奈米粒子之溫度相同,使得理想氣體方程式適用於估計氣體混合物在噴嘴膨脹中之加速,其中O2 與奈米粒子之混合物在共同溫度下具有共同動能。包含熔融金屬奈米粒子(諸如銀奈米粒子)之氣體混合物在聚合-分岔噴嘴中之加速可處理為聚合-分岔噴嘴中之理想氣體/蒸汽的等熵膨脹。給出停滯溫度T0 ;停滯壓力p0 ;氣體常數Rv ;及比熱比k,可使用Liepmann及Roshko [Liepmann, H.W. and A. Roshko  Elements of Gas Dynamics, Wiley (1957)]之方程式計算熱力學參數。停滯音速

Figure 02_image599
及密度
Figure 02_image601
由下式給出:
Figure 02_image603
For gaseous mixture of oxygen and the silver nanoparticles, consisting of the same temperature of oxygen molecules in the system and of the silver nanoparticles, the ideal gas equation so that the gas mixture adapted to estimate the acceleration of the expansion in the nozzle, wherein the nanoparticles with O 2 The mixture has a common kinetic energy at a common temperature. The acceleration of a gas mixture containing molten metal nanoparticles, such as silver nanoparticles, in a polymerization-bifurcation nozzle can be treated as an isentropic expansion of an ideal gas/vapor in the polymerization-bifurcation nozzle. The thermodynamic parameters can be calculated using the equations of Liepmann and Roshko [Liepmann, HW and A. Roshko Elements of Gas Dynamics, Wiley (1957)], given the stagnation temperature T 0 ; the stagnation pressure p 0 ; the gas constant R v ; and the specific heat ratio k . stagnant speed of sound
Figure 02_image599
and density
Figure 02_image601
is given by:
Figure 02_image603

噴嘴導入條件(馬赫數Ma* = 1)由下式給出:

Figure 02_image605
其中u為速度,m為質量流,且A為噴嘴橫截面積。噴嘴出口條件(出口馬赫數= Ma)由下式給出:
Figure 02_image607
The nozzle introduction condition (Mach number Ma * = 1) is given by:
Figure 02_image605
where u is the velocity, m is the mass flow, and A is the nozzle cross-sectional area. The nozzle outlet condition (outlet Mach number = Ma) is given by:
Figure 02_image607

由於奈米粒子之高分子量,MHD轉換參數類似於LMMHD之轉換參數,其中MHD工作介質稠密且相對於氣態膨脹以較低速度行進。Due to the high molecular weight of the nanoparticles, the MHD transition parameters are similar to those of LMMHD, where the MHD working medium is dense and travels at a lower velocity relative to gaseous expansion.

電力系統及構型 在例示性實施例中,具有圖23中所示之底座電極之SunCell®包含:(i)噴射器儲集器5c、EM泵管5k6及噴嘴5q、儲集器底板409a及球面反應單元腔室5b31圓頂;(ii)包含套管儲集器409d之非噴射器儲集器,該套管儲集器可包含在套管儲集器409d末端處熔接至具有套管儲集器凸緣409e之下部半球體5b41的SS;(iii)電絕緣體插入式儲集器409f,其包含頂部處之底座5c1及與套管儲集器凸緣409e配合的底部處之插入式儲集器凸緣409g,其中插入式儲集器409f、可進一步包含滴液邊緣5c1a之底座5c及插入式儲集器凸緣409g可包含諸如氮化硼之陶瓷、諸如BN-CaO或BN-ZrO2 之穩定BN、碳化矽、氧化鋁、氧化鋯、氧化鉿或石英,或諸如耐火金屬、碳或具有諸如SiC或ZrB2 之保護塗層的陶瓷的耐火材料,諸如包含SiC或ZrB2 碳之耐火材料;及(iv)儲集器底板409a,諸如包含SS之儲集器底板,該儲集器底板具有用於點火匯流條10a1及點火匯流條10之穿透件,其中底板栓接至套管儲集器凸緣409e以包夾插入式儲集器凸緣409g。在一實施例中,SunCell®可包含真空殼體,其圍封且氣密密封包含套管儲集器凸緣409e、插入式儲集器凸緣409g及儲集器底板409a之接合部,其中殼體在電極匯流條10處電隔離。在一實施例中,噴嘴5q可旋擰至電磁泵管5k61之噴嘴區段上。噴嘴可包含耐火金屬,諸如W、Ta、Re或Mo。噴嘴可係浸沒式的。 Power System and Configuration In an exemplary embodiment, the SunCell® with the base electrode shown in Figure 23 comprises: (i) an injector reservoir 5c, EM pump tubing 5k6 and nozzles 5q, a reservoir base plate 409a and Spherical reaction unit chamber 5b31 dome; (ii) a non-injector reservoir comprising a casing reservoir 409d, which may include a SS of lower hemisphere 5b41 of collector flange 409e; (iii) Electrical insulator plug-in reservoir 409f comprising base 5c1 at top and plug-in reservoir at bottom which mates with casing reservoir flange 409e Reservoir flange 409g, wherein plug-in reservoir 409f, base 5c which may further comprise drip edge 5c1a, and plug-in reservoir flange 409g may comprise a ceramic such as boron nitride, such as BN-CaO or BN-ZrO stability of BN 2, silicon carbide, aluminum oxide, zirconium oxide, hafnium oxide, or quartz, or a refractory metal such as carbon or a ceramic such as SiC or a refractory material having a ZrB 2 of protective coating, such as SiC or containing ZrB 2 carbons Refractory material; and (iv) a reservoir floor 409a, such as a reservoir floor comprising SS with penetrations for ignition bus bar 10a1 and ignition bus bar 10, wherein the floor is bolted to the sleeve The tube reservoir flange 409e sandwiches the plug-in reservoir flange 409g. In one embodiment, the SunCell® may include a vacuum enclosure that encloses and hermetically seals the junction of the sleeve reservoir flange 409e, the plug-in reservoir flange 409g, and the reservoir floor 409a, wherein The housing is electrically isolated at the electrode bus bars 10 . In one embodiment, the nozzle 5q can be screwed onto the nozzle section of the electromagnetic pump tube 5k61. The nozzle may contain a refractory metal such as W, Ta, Re or Mo. The nozzles may be submerged.

在圖23中所示之實施例中,倒置底座5c2及點火匯流條及電極10為定向於單元5b3之中心周圍及在負z軸上對準中之至少一者,其中至少一個相對噴射器電極5k61在適用時相對重力在正z方向上自其儲集器5c噴射熔融金屬。噴射熔融流可在適用時相對重力保持底座5c2中之塗層或液體金屬池。池或塗層可至少部分地覆蓋電極10。池或塗層可保護電極免受諸如腐蝕或熔融之損害。在後一情況下,可藉由流動噴射熔融金屬增大EM泵抽速率以增大電極冷卻。亦可增大電極區域及厚度以耗散局部熱點來防止熔融。底座可經正偏壓且噴射器電極可經負偏壓。在另一實施例中,底座可經負偏壓且噴射器電極可經正偏壓,其中噴射器電極可浸沒於熔融金屬中。諸如鎵之熔融金屬可填充反應單元腔室5b31之下部部分的一部分。除了噴射熔融金屬之塗層或池之外,亦可藉由所施加負偏壓而穩定諸如W電極之電極10以免受腐蝕。在一實施例中,電極10可包含諸如惰性導電塗層(諸如錸塗層)之塗層以保護電極免受腐蝕。在一實施例中,電極可經冷卻。電極之冷卻可降低電極腐蝕速率及用熔融金屬形成合金之速率中之至少一者(例如,相比於無電極冷卻之操作)。冷卻可藉由諸如中心線水冷卻之構件來達成。在一實施例中,藉由增大與來自噴射器電極之電漿及熔融金屬流中之至少一者接觸的表面之大小來增大倒置電極之表面區域。在例示性實施例中,較大板或杯狀物附接至電極10之末端。在另一實施例中,噴射器電極可經浸沒以增大相對電極之面積。圖23展示例示性球面反應單元腔室。諸如矩形、立方形、圓柱形及圓錐形之其他幾何形狀在本發明之範疇內。在一實施例中,連接至儲集器之頂部的反應單元腔室之基底可傾斜,諸如為圓錐形。此類構型可促進熔融金屬在其進入EM泵之入口時之混合。在實施例中,反應單元腔室之外部表面的至少一部分可包覆在諸如銅的具有高熱傳遞係數之材料中以避免反應單元腔室壁上的熱點。在實施例中,SunCell®包含諸如EM泵之複數個泵,以將熔融金屬噴射在反應單元腔室壁上以保持熔融金屬壁來防止反應單元腔室中之電漿熔融壁。在另一實施例中,反應單元腔室壁包含襯裡5b31a,諸如BN、熔融二氧化矽或石英襯裡以避免熱點。例示性反應單元腔室包含襯有石英板之立方形上部區段及下部球面區段,該下部球面區段在底部處包含EM泵,其中球面區段促進熔融金屬混合。In the embodiment shown in Figure 23, the inverted mount 5c2 and firing busbars and electrodes 10 are at least one of oriented around the center of the cell 5b3 and aligned on the negative z-axis, at least one of which is opposite the injector electrode 5k61 ejects molten metal from its reservoir 5c in the positive z-direction relative to gravity where applicable. The sprayed molten stream may hold the coating or pool of liquid metal in the base 5c2 against gravity where applicable. A cell or coating may at least partially cover electrode 10 . The pool or coating protects the electrodes from damage such as corrosion or melting. In the latter case, the EM pumping rate can be increased by flow spraying the molten metal to increase electrode cooling. The electrode area and thickness can also be increased to dissipate localized hot spots to prevent melting. The base may be positively biased and the injector electrode may be negatively biased. In another embodiment, the base may be negatively biased and the injector electrode may be positively biased, wherein the injector electrode may be submerged in molten metal. Molten metal such as gallium may fill a portion of the lower portion of the reaction cell chamber 5b31. In addition to spraying a coating or pool of molten metal, electrodes 10, such as W electrodes, can also be stabilized from corrosion by applying a negative bias. In one embodiment, electrode 10 may include a coating such as an inert conductive coating, such as a rhenium coating, to protect the electrode from corrosion. In one embodiment, the electrodes may be cooled. Cooling of the electrode can reduce at least one of the rate of electrode corrosion and the rate of alloy formation with molten metal (eg, compared to operation without electrode cooling). Cooling can be accomplished by means such as centerline water cooling. In one embodiment, the surface area of the inverted electrode is increased by increasing the size of the surface in contact with at least one of the plasma and molten metal flow from the injector electrode. In an exemplary embodiment, a larger plate or cup is attached to the end of electrode 10 . In another embodiment, the injector electrode may be submerged to increase the area of the opposing electrode. 23 shows an exemplary spherical reaction cell chamber. Other geometric shapes such as rectangular, cubic, cylindrical and conical are within the scope of the present invention. In one embodiment, the base of the reaction unit chamber connected to the top of the reservoir may be sloped, such as conical. Such a configuration promotes mixing of the molten metal as it enters the inlet of the EM pump. In an embodiment, at least a portion of the exterior surface of the reaction unit chamber may be clad in a material with a high heat transfer coefficient, such as copper, to avoid hot spots on the reaction unit chamber walls. In an embodiment, the SunCell® includes a plurality of pumps, such as EM pumps, to spray molten metal on the reaction unit chamber walls to hold the molten metal walls to prevent the plasma from melting the walls in the reaction unit chamber. In another embodiment, the reaction unit chamber wall includes a liner 5b31a, such as a BN, fused silica or quartz liner to avoid hot spots. An exemplary reaction cell chamber includes a cubic upper section lined with a quartz plate and a lower spherical section that includes an EM pump at the bottom, where the spherical section facilitates molten metal mixing.

在一實施例中,套管儲集器409d可包含點火匯流條及電極10之緊密裝配電絕緣體,使得熔融金屬約僅包含於倒置底座5c2末端處之杯式或滴液邊緣5c1a中。具有插入式儲集器凸緣409g之插入式儲集器409f可藉由儲集器底板409a、套管儲集器409d及套管儲集器凸緣409e安裝至單元腔室5b3。電極可經由電極穿透件10a1穿透儲集器底板409a。電極可經由電極穿透件10a1穿透儲集器底板409a。在一實施例中,插入式儲集器409f可包含電極匯流條10上之塗層。在一實施例中,諸如插入式儲集器409f、反應單元腔室襯裡或塗層及匯流條襯裡或塗層的至少一個SunCell®組件可包含諸如BN之陶瓷、石英、二氧化鈦、氧化鋁、氧化釔、氧化鉿、氧化鋯、碳化矽、富鋁紅柱石或諸如ZrO2 -TiO2 -Y2 O3 、TiO2 -Yr2 O3 -Al2 O3 之混合物,或本發明中之另一者,或包含SiO2 、Al2 O3 、ZrO2 、HfO2 、TiO2 、MgO、BN、BN-ZrO2 、BN-B2 O3 及用以結合至組件之金屬且接著結合至BN或另一陶瓷之陶瓷中之至少一者的混合物。由Oerlikon生產的包含BN之例示性複合塗層為Ni 13Cr 8Fe 3.5Al 6.5BN、ZrO2 9.5Dy2 O3 0.7BN、ZrO2 7.5Y2 O3 0.7BN及Co 25Cr 5Al 0.27Y 1.75Si 15hBN。在一實施例中,塗佈有BN之合適金屬、陶瓷或碳可充當襯裡或塗層。合適的金屬或陶瓷能夠在SunCell®之溫度以及BN塗層之黏著性下操作。在一實施例中,諸如套管儲集器409d、反應單元腔室襯裡或塗層或匯流條襯裡或塗層之SunCell®組件中之黏合劑可藉由在真空下加熱及運行中之至少一者而烘乾。替代地,鈍化塗層可形成或施加至陶瓷。在例示性實施例中,BN經氧化以形成B2 O3 鈍化塗層。In one embodiment, the sleeve reservoir 409d may include the ignition bus bar and the close-fitting electrical insulator of the electrode 10, such that the molten metal is contained approximately only in the cup or drip edge 5c1a at the end of the inverted base 5c2. A plug-in reservoir 409f with a plug-in reservoir flange 409g can be mounted to the cell chamber 5b3 by means of the reservoir base plate 409a, casing reservoir 409d, and casing reservoir flange 409e. The electrodes can penetrate the reservoir bottom plate 409a via the electrode penetrations 10a1. The electrodes can penetrate the reservoir bottom plate 409a via the electrode penetrations 10a1. In one embodiment, the plug-in reservoir 409f may include a coating on the electrode bus bar 10 . In one embodiment, at least one SunCell® component such as the plug-in reservoir 409f, the reaction cell chamber lining or coating, and the bus bar lining or coating may comprise ceramics such as BN, quartz, titania, alumina, oxide yttrium, hafnium oxide, zirconium oxide, silicon carbide, mullite or as ZrO 2 -TiO 2 -Y 2 O 3 , TiO 2 -Yr mixture 2 O 3 -Al 2 O 3, the present invention of another, or or SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , TiO 2 , MgO, BN, BN-ZrO 2 , BN-B 2 O 3 and metals used to bond to components and then bonded to BN or A mixture of at least one of the other ceramics. Exemplary composite coatings comprising BN produced by Oerlikon are Ni 13Cr 8Fe 3.5Al 6.5BN, ZrO 2 9.5Dy 2 O 3 0.7BN, ZrO 2 7.5Y 2 O 3 0.7BN, and Co 25Cr 5Al 0.27Y 1.75Si 15hBN. In one embodiment, a suitable metal, ceramic or carbon coated with BN may serve as a liner or coating. A suitable metal or ceramic can operate at the temperature of SunCell® and the adhesion of the BN coating. In one embodiment, adhesives in SunCell® components such as casing reservoir 409d, reaction cell chamber linings or coatings, or bus bar linings or coatings can be produced by at least one of heating and operating under vacuum. to dry. Alternatively, a passivation coating may be formed or applied to the ceramic. In an exemplary embodiment, BN oxidized to form a B 2 O 3 passivation coating.

EM泵管5k6可包含對與鎵形成合金具有抗性之材料、襯裡或塗層,諸如W、Ta、Re、Mo、BN、氧化鋁、富鋁紅柱石、二氧化矽、石英、氧化鋯、氧化鉿、二氧化鈦或本發明中之另一者中之至少一者。在一實施例中,泵管、襯裡或塗層包含碳。碳可藉由懸浮手段施加,諸如經固化且脫氣之噴霧或液體塗層。在例示性實施例中,將碳懸浮液倒入泵管中以進行填充,使碳懸浮液固化,且接著機械加工出通過管之通道以在壁上形成碳襯裡。在一實施例中,諸如Ni之經碳塗佈金屬對在高溫下形成碳化物具有抗性。在一實施例中,EM泵管5k6可包含填充有經開孔以形成泵管之襯裡或塗佈材料(諸如BN)的金屬管。EM泵管可包含總成,該總成包含複數個部分。該等部分可包含對與鎵形成合金具有抗性之材料或襯裡或塗層。在一實施例中,該等部分可單獨地經塗佈及組裝。總成可包含以下各者中之至少一者:包含兩個相對匯流條5k2、液體金屬入口及液體金屬出口之殼體;及用以密封諸如接頭套管之殼體的構件。在一實施例中,EM泵匯流條5k2可包含與EM泵管內部之鎵接觸之導電部分,該導電部分對與鎵形成合金具有抗性。導電部分可包含諸如Ta、W、Re、Ir或Mo之抗合金材料;或在諸如SS之另一金屬上的抗合金包層或塗層,諸如包含Ta、W、Re、Ir或Mo之包層或塗層。The EM pump tube 5k6 may contain materials, linings or coatings resistant to alloying with gallium, such as W, Ta, Re, Mo, BN, alumina, mullite, silica, quartz, zirconia, At least one of hafnium oxide, titanium dioxide, or another of the present invention. In one embodiment, the pump tube, liner or coating comprises carbon. The carbon can be applied by suspension means, such as a cured and degassed spray or liquid coating. In an exemplary embodiment, the carbon suspension is poured into a pump tube for filling, the carbon suspension is allowed to solidify, and then channels are machined through the tube to form a carbon lining on the wall. In one embodiment, carbon-coated metals such as Ni are resistant to carbide formation at high temperatures. In one embodiment, the EM pump tube 5k6 may comprise a metal tube filled with a lining or coating material (such as BN) that is perforated to form the pump tube. The EM pump tubing may contain an assembly that contains multiple parts. These portions may include materials or liners or coatings that are resistant to alloying with gallium. In one embodiment, the parts may be individually coated and assembled. The assembly may include at least one of: a housing comprising two opposing bus bars 5k2, a liquid metal inlet and a liquid metal outlet; and means to seal the housing, such as a joint sleeve. In one embodiment, the EM pump bus bar 5k2 may include a conductive portion in contact with gallium inside the EM pump tube, the conductive portion being resistant to alloying with gallium. The conductive portion may comprise an alloy resistant material such as Ta, W, Re, Ir or Mo; or an alloy resistant cladding or coating on another metal such as SS, such as a cladding comprising Ta, W, Re, Ir or Mo layer or coating.

在實施例中,SunCell®包含進水升管5qa以防止熱鎵流動至儲集器基底5kk1且抑制鎵合金形成。儲集器基底5kk1可包含襯裡、包層或塗層以抑制鎵合金形成。In an embodiment, SunCell® includes an inlet riser 5qa to prevent the flow of hot gallium to the reservoir substrate 5kk1 and suppress gallium alloy formation. The reservoir substrate 5kk1 may contain a liner, cladding or coating to inhibit gallium alloy formation.

在允許EM泵匯流條5k2與EM泵管5k6中之熔融金屬之間的良好電接觸之實施例中,在EM泵匯流條藉由諸如熔接之手段附接之前施加塗層。替代地,可在操作之前藉由諸如磨損、剝蝕或蝕刻的此項技術中已知之手段自穿透至熔融金屬中之匯流條移除任何塗層。In embodiments that allow good electrical contact between the EM pump bus bar 5k2 and the molten metal in the EM pump tube 5k6, the coating is applied before the EM pump bus bar is attached by means such as welding. Alternatively, any coating may be removed from the bus bars penetrating into the molten metal by means known in the art, such as abrasion, ablation or etching, prior to operation.

在另一實施例中,插入式儲集器凸緣409g可由安裝於儲集器底板409a中之饋通件替換,該饋通件使饋通件之匯流條10及底座5c1或插入式儲集器409f與儲集器底板409a電隔離。饋通件可熔接至儲集器底板。包含匯流條10之例示性饋通件為Solid Sealing Technology, Inc.的#FA10775。匯流條10可接合至電極8或匯流條10及電極8可包含單個片件。儲集器底板可直接接合至套管儲集器凸緣。接頭可包含藉由介入墊片栓接在一起之Conflat凸緣。凸緣可包含用於密封諸如銅墊片之軟金屬墊片的刀邊緣。包含插入式儲集器409f之陶瓷底座5c1可埋入相對開孔的儲集器底板409a中,其中底座與儲集器底板之間的接頭可藉由諸如碳墊片或本發明中之另一者的墊片而密封。電極8及匯流條10可在發生電漿放電之末端包含終板。可藉由推動圓盤,該圓盤又施加壓力至墊片來將壓力施加至墊片,以密封底座與儲集器底板之間的接頭。圓盤可旋擰至電極8末端上,使得轉動圓盤將壓力施加至墊片。饋通件可包含連接至匯流條且連接至電極之環狀套環。環狀套環可包含螺紋固定之固定螺釘,其在擰緊時將電極鎖定至適當位置。該位置可在端盤向上拉動底座時施加之張力下藉由墊片而鎖定。底座5c1可包含用於近接固定螺釘之軸。該軸可帶螺紋,使得其可藉由諸如陶瓷之不導電固定螺釘(諸如BN螺釘)密封在底座之外表面上,其中底座可包含BN,諸如BN-ZrO2 。在另一實施例中,匯流條10及電極8可包含可對接連接的桿。在一實施例中,底座5c1可包含兩個或更多個螺紋金屬軸,其各自具有固定螺釘,該固定螺釘抵靠匯流條10或電極8而緊固以在張力下將其鎖定於適當位置。張力可提供匯流條10與電極8之連接及墊片上之壓力中的至少一者。替代地,相對電極包含縮短之絕緣底座5c1,其中電極8及匯流條10中之至少一者包含陽螺紋、墊圈及匹配的陰螺母,使得螺母及墊圈抵靠縮短之絕緣底座5c1緊固。替代地,電極8可在末端上包含旋擰至匯流條10末端處之匹配的陰螺紋中的陽螺紋,且電極8進一步包含固定墊圈,其抵靠可埋入之底座墊圈及儲集器底板409a緊固縮短之絕緣底座5c1。相對電極可包含熟習此項技術者已知的固定底座、匯流條及電極的其他手段。In another embodiment, the plug-in reservoir flange 409g may be replaced by a feedthrough installed in the reservoir bottom plate 409a that allows the busbar 10 of the feedthrough and the base 5c1 or the plug-in reservoir The reservoir 409f is electrically isolated from the reservoir bottom plate 409a. The feedthrough can be welded to the reservoir floor. An exemplary feedthrough including bus bar 10 is Solid Sealing Technology, Inc. #FA10775. The bus bar 10 may be bonded to the electrode 8 or the bus bar 10 and the electrode 8 may comprise a single piece. The reservoir floor can be directly joined to the casing reservoir flange. The joint may include Conflat flanges bolted together by intervening spacers. The flange may contain a knife edge for sealing a soft metal gasket such as a copper gasket. The ceramic base 5c1 containing the plug-in reservoir 409f can be embedded in the opposite open-hole reservoir floor 409a, wherein the joint between the base and the sealed with the gasket of the user. Electrodes 8 and bus bars 10 may include end plates at the ends where the plasma discharge occurs. Pressure can be applied to the gasket by pushing on the disc, which in turn applies pressure to the gasket, to seal the joint between the base and the reservoir floor. The disc can be screwed onto the end of the electrode 8 so that turning the disc applies pressure to the spacer. The feedthrough may include annular collars connected to the bus bars and connected to the electrodes. The annular collar may contain a threaded set screw that locks the electrode in place when tightened. This position can be locked by a spacer under the tension applied when the end disc pulls the base upward. The base 5c1 may include a shaft for access to the set screw. The shaft can be threaded so that it can be sealed against the outer surface of the base, which can contain BN, such as BN-ZrO 2 , by means of non-conductive set screws such as ceramic, such as BN screws. In another embodiment, the bus bars 10 and electrodes 8 may comprise butt-connectable rods. In one embodiment, the base 5c1 may comprise two or more threaded metal shafts, each having a set screw that is fastened against the bus bar 10 or electrode 8 to lock it in place under tension . The tension can provide at least one of the connection of the bus bar 10 to the electrodes 8 and the pressure on the pads. Alternatively, the opposing electrode includes a shortened insulating base 5c1, wherein at least one of the electrode 8 and the bus bar 10 includes a male thread, a washer and a matching female nut such that the nut and washer are fastened against the shortened insulating base 5c1. Alternatively, the electrode 8 may include male threads on the ends that are screwed into matching female threads at the ends of the bus bars 10, and the electrode 8 further includes a retaining washer that abuts the embeddable base washer and the reservoir floor 409a fastens the shortened insulating base 5c1. The opposing electrode may include other means of securing the base, bus bars, and electrodes known to those skilled in the art.

在另一實施例中,至少一個密封件,諸如(i)插入式儲集器凸緣409g與套管儲集器凸緣409e之間的密封件,及(ii)儲集器底板409a與套管儲集器凸緣409e之間的密封件可包含濕式密封件(圖23)。在後一情況下,插入式儲集器凸緣409g可由安裝於儲集器底板409a中之饋通件替換,該饋通件使饋通件之匯流條10及底座5c1與儲集器底板409a電隔離,且濕式密封件可包含儲集器底板409a與饋通件之間的密封件。因為鎵形成熔點為1900℃之氧化物,所以濕式密封件可包含固體氧化鎵。In another embodiment, at least one seal, such as (i) the seal between the plug-in reservoir flange 409g and the casing reservoir flange 409e, and (ii) the reservoir floor 409a and the sleeve The seal between the tube reservoir flanges 409e may comprise a wet seal (FIG. 23). In the latter case, the plug-in reservoir flange 409g may be replaced by a feedthrough installed in the reservoir floor 409a that connects the feedthrough's bus bar 10 and base 5c1 with the reservoir floor 409a Electrical isolation, and the wet seal may include a seal between the reservoir floor 409a and the feedthrough. Because gallium forms an oxide with a melting point of 1900°C, the wet seal may contain solid gallium oxide.

在一實施例中,氫可經由諸如結構上強化之Pd-Ag或鈮膜之氫滲透膜供應至單元。通過氫滲透膜之氫滲透率可藉由將電漿保持在滲透膜之外表面上來增大。SunCell®可包含半透膜,該半透膜可包含諸如電漿單元(例如,輝光放電單元)之陰極的電漿單元之電極。諸如圖23中所示之SunCell®的SunCell®可進一步包含外密封電漿腔室,其包含環繞單元5b3之壁中的一部分之外壁,其中單元5b3之金屬壁中的一部分包含電漿單元之電極。密封電漿腔室可包含單元5b3周圍之腔室,諸如殼體,其中單元5b3之壁可包含電漿單元電極,且殼體或腔室中之獨立電極可包含相對電極。SunCell®可進一步包含電漿功率源及電漿控制系統、諸如氫氣供應槽之氣體源、氫供應監測器及規則及真空泵。In one embodiment, hydrogen may be supplied to the cell via a hydrogen permeable membrane such as a structurally strengthened Pd-Ag or niobium membrane. The hydrogen permeation rate through the hydrogen permeable membrane can be increased by maintaining the plasma on the outer surface of the permeable membrane. SunCell® can include a semipermeable membrane that can include electrodes of a plasmonic cell such as the cathode of a plasmonic cell (eg, a glow discharge cell). A SunCell® such as the SunCell® shown in Figure 23 may further comprise an outer sealed plasma chamber comprising a portion of the outer wall surrounding the walls of cell 5b3, wherein a portion of the metal walls of cell 5b3 comprise electrodes of the plasma cell . A sealed plasma chamber may include a chamber surrounding cell 5b3, such as a housing, where the walls of cell 5b3 may contain plasma cell electrodes, and separate electrodes in the housing or chamber may contain opposing electrodes. SunCell® may further include plasma power sources and plasma control systems, gas sources such as hydrogen supply tanks, hydrogen supply monitors and rules, and vacuum pumps.

系統可經由產生兩個電漿來操作。諸如非化學計量H2 /O2 混合物(例如,以混合物之莫耳百分比計,具有小於20%或小於10%或小於5%或小於3%之O2 的H2 /O2 )的初始反應混合物可穿過諸如輝光放電之電漿單元,以產生能夠以足夠的放熱進行催化反應以產生如本文所描述之電漿的反應混合物。例如,非化學計量H2 /O2 混合物可通過輝光放電以產生原子氫及初生H2 O之流出物(例如,具有一定濃度之水且具有足以防止氫鍵形成之內能的混合物)。可將輝光放電流出物引導至反應腔室中,其中電流供應於兩個電極之間(例如,其中熔融金屬穿過其間)。在流出物與偏壓熔融金屬(例如,鎵)發生相互作用時,初生水與原子氫之間的催化反應例如在電弧電流形成時經誘發。電力系統可包含: a)電漿單元(例如,輝光放電單元); b)一組電極,其經由其間流動之熔融金屬彼此電接觸,使得可將電偏壓施加至熔融金屬; c)熔融金屬噴射系統,其在電極之間流動熔融金屬; 其中電漿單元之流出物朝向經偏壓熔融金屬(例如,正電極或陽極)定向。The system can operate by generating two plasmas. Such as a non-stoichiometric H 2 / O 2 mixtures (e.g., in mole percentage of a mixture, having less than 20% O 10% or less, or less than 5%, or less than 3% of H 2 2 / O 2) in the initial reaction The mixture can be passed through a plasma cell, such as a glow discharge, to produce a reaction mixture capable of catalyzing the reaction with sufficient exotherm to produce a plasma as described herein. For example, non-stoichiometric H 2 / O 2 mixtures can be obtained by glow discharge atomic hydrogen to produce H 2 O and the primary effluent (e.g., water having a concentration within the range of the mixture of hydrogen can be sufficient to prevent formation). The glow discharge effluent can be directed into a reaction chamber with current supplied between the two electrodes (eg, with molten metal passing therethrough). When the effluent interacts with the biased molten metal (eg, gallium), a catalytic reaction between the nascent water and atomic hydrogen is induced, eg, when an arc current is formed. The power system may include: a) a plasma cell (eg, a glow discharge cell); b) a set of electrodes in electrical contact with each other via molten metal flowing therebetween so that an electrical bias can be applied to the molten metal; c) the molten metal A spray system that flows molten metal between electrodes; wherein the effluent of the plasma cell is directed toward the biased molten metal (eg, positive electrode or anode).

在實施例中,SunCell®包含至少一個陶瓷儲集器5c及反應單元腔室5b31,諸如包含石英之單元腔室。SunCell®可包含兩個圓柱形反應單元腔室5b31,其各自包含底部區段處之儲集器,其中反應單元腔室沿著兩個腔室相交之接縫在頂部融合,如圖30A至圖30B中所示。在一實施例中,由反應單元腔室5b31之相交形成之頂點可包含墊片式密封件,諸如兩個凸緣,其與諸如石墨墊片之介入墊片栓接在一起以吸收熱膨脹及其他應力。每一儲集器可包含諸如進水升管5qa之構件以保持儲集器中之熔融金屬的時間平均位準。儲集器之底部可各自包含儲集器凸緣5k17,其可密封至底板5kk1,該底板包含EM泵總成5kk,該EM泵總成包含具有入口及噴射管5k61穿透件之EM泵5ka且進一步包含在每一底板下之EM磁體5k4及EM泵管5k6。在一實施例中,永久性EM泵磁體5k4(圖30A至圖30B)可用諸如DC或AC電磁體之電磁體替換。在磁體5k4包含AC電磁體之情況下,用於EM匯流條5k2之EM泵電流源包含AC電源,該AC電源提供與施加至EM泵管5k6以產生勞侖茲泵抽力之AC EM泵電磁體場同相的電流。每一EM泵總成5kk可以與對應儲集器5c相同之角度附接至儲集器凸緣,使得儲集器凸緣可垂直於傾斜儲集器。EM泵總成5kk可安裝至具有支撐件之滑台409c(圖30B),以安裝及對準對應傾斜EM泵總成5kk及儲集器5c。底板可藉由濕式密封件而密封至儲集器。底板可進一步包含穿透件,其各自具有用於排出或供應氣體至反應單元腔室5b31之管,該腔室包含其中融合儲集器之區。儲集器可進一步包含氣體噴射管710及儲集器真空管711中之至少一者,其中至少一個管可延伸於熔融金屬位準上方。氣體噴射管線710及真空管線711中之至少一者可包含具有側開口以允許氣體流動,同時至少部分地阻擋熔融金屬進入管的諸如碳頂蓋之頂蓋或諸如碳封蓋之封蓋。在另一設計中,融合儲集器區段可水平地切開,且豎直圓柱體可附接在切開區段處。圓柱體可進一步包含諸如石英板之密封頂板或可接合至MHD轉換器之聚合分岔噴嘴。頂板可包含用於諸如真空及氣體供應管線之管線的至少一個穿透件。在一實施例中,石英可容納於緊密裝配之殼體中,該殼體由於在高溫及高壓下操作而提供支撐以防止石英向外變形。殼體可包含碳及陶瓷中之至少一者,及在高溫下具有較高熔點且抗變形之金屬。例示性殼體包含不鏽鋼、C、W、Re、Ta、Mo、Nb、Ir、Ru、Hf、Tc、Rh、V、Cr、Zr、Pa、Pt、Th、Lu、Ti、Pd、Tm、Sc、Fe、Y、Er、Co、Ho、Ni及Dy中之至少一者。至SunCell組件,諸如儲集器5c、反應單元腔室5b31、聚合-分岔噴嘴或MHD噴嘴區段307、MHD膨脹或產生區段308、MHD冷凝區段309、MHD電極穿透件、電磁泵匯流條5k2,及將點火功率供應至儲集器之熔融金屬的點火儲集器匯流條5k2a1中之一者的至少一個密封件可包含濕式密封件。在例示性實施例中,儲集器凸緣5k17包含具有底板5kk1之濕式密封件,其中凸緣之外周界可藉由諸如水冷卻迴路之冷卻迴路5k18冷卻。在另一例示性實施例中,EM泵管包含諸如BN襯裡之襯裡,且電磁泵匯流條5k2及點火儲集器匯流條5k2a1中之至少一者包含濕式密封件。In an embodiment, SunCell® includes at least one ceramic reservoir 5c and a reaction cell chamber 5b31, such as a quartz-containing cell chamber. The SunCell® may contain two cylindrical reaction unit chambers 5b31, each containing a reservoir at the bottom section, where the reaction unit chambers are fused at the top along the seam where the two chambers meet, as shown in Figures 30A-30A- shown in 30B. In one embodiment, the apex formed by the intersection of the reaction cell chambers 5b31 may include gasketed seals, such as two flanges, bolted together with intervening gaskets such as graphite gaskets to absorb thermal expansion and other stress. Each reservoir may include components such as inlet risers 5qa to maintain a time-averaged level of molten metal in the reservoir. The bottoms of the reservoirs may each include a reservoir flange 5k17, which may be sealed to a base plate 5kk1, which includes an EM pump assembly 5kk, which includes an EM pump 5ka with inlet and injection tube 5k61 penetrations And further includes an EM magnet 5k4 and an EM pump tube 5k6 under each base plate. In one embodiment, the permanent EM pump magnet 5k4 (FIGS. 30A-30B) can be replaced with an electromagnet such as a DC or AC electromagnet. Where the magnet 5k4 comprises an AC electromagnet, the EM pump current source for the EM bus bar 5k2 comprises an AC power supply that provides and applies the AC EM pump solenoid that is applied to the EM pump tube 5k6 to generate the Lorentz pumping force Currents in the body field in phase. Each EM pump assembly 5kk can be attached to the reservoir flange at the same angle as the corresponding reservoir 5c, so that the reservoir flange can be perpendicular to the inclined reservoir. The EM pump assembly 5kk can be mounted to the slide table 409c (FIG. 30B) with supports to mount and align the corresponding inclined EM pump assembly 5kk and reservoir 5c. The bottom plate can be sealed to the reservoir by a wet seal. The bottom plate may further comprise penetrations, each having a tube for exhausting or supplying gas to the reaction unit chamber 5b31, which chamber contains a region in which the reservoir is fused. The reservoir may further include at least one of a gas injection tube 710 and a reservoir vacuum tube 711, at least one of which may extend above the molten metal level. At least one of gas injection line 710 and vacuum line 711 may include a cap such as a carbon cap or a cap such as a carbon cap having side openings to allow gas flow while at least partially blocking molten metal from entering the tube. In another design, the fusion reservoir section can be cut horizontally, and a vertical cylinder can be attached at the cut section. The cylinder may further comprise a sealed top plate such as a quartz plate or a polymeric bifurcation nozzle that may be joined to the MHD converter. The top plate may contain at least one penetration for lines such as vacuum and gas supply lines. In one embodiment, the quartz may be housed in a tightly fitted housing that provides support to prevent outward deformation of the quartz due to operation at high temperature and pressure. The housing may comprise at least one of carbon and ceramic, and a metal that has a higher melting point and is resistant to deformation at high temperatures. Exemplary housings include stainless steel, C, W, Re, Ta, Mo, Nb, Ir, Ru, Hf, Tc, Rh, V, Cr, Zr, Pa, Pt, Th, Lu, Ti, Pd, Tm, Sc , at least one of Fe, Y, Er, Co, Ho, Ni and Dy. To SunCell components such as reservoir 5c, reaction cell chamber 5b31, polymerization-bifurcation nozzle or MHD nozzle section 307, MHD expansion or generation section 308, MHD condensation section 309, MHD electrode penetration, electromagnetic pump The bus bar 5k2, and at least one seal of one of the ignition reservoir bus bars 5k2a1 supplying ignition power to the molten metal of the reservoir may comprise a wet seal. In an exemplary embodiment, the reservoir flange 5k17 includes a wet seal with a bottom plate 5kk1, wherein the flange outer perimeter can be cooled by a cooling circuit 5k18, such as a water cooling circuit. In another exemplary embodiment, the EM pump tube includes a liner, such as a BN liner, and at least one of the electromagnetic pump bus bar 5k2 and the ignition reservoir bus bar 5k2a1 includes a wet seal.

在實施例中,諸如石英SunCell®之陶瓷SunCell®安裝在金屬底板5kk1(圖30B)上,其中濕式密封件包含至儲集器5c中之穿透件,其允許儲集器中諸如銀之熔融金屬接觸每一EM泵總成之底板5kk1上之固化熔融金屬以形成濕式密封件。每一底板可連接至諸如DC或AC電源之點火電源的端子,使得濕式密封件亦可充當用於點火功率之匯流條。EM泵可包含感應AC型,諸如圖4及圖5中所示之類型。陶瓷SunCell®可包含複數個組件,諸如EM泵、儲集器、反應單元腔室及MHD組件,該等組件藉由可栓接在一起之帶凸緣墊片接頭經密封。墊片可包含碳或陶瓷,諸如Thermiculite。In an embodiment, a ceramic SunCell®, such as a quartz SunCell®, is mounted on a metal base plate 5kk1 (FIG. 30B), where the wet seal contains penetrations into the reservoir 5c, which allow for the presence of materials such as silver in the reservoir The molten metal contacts the solidified molten metal on the bottom plate 5kk1 of each EM pump assembly to form a wet seal. Each backplane can be connected to a terminal of an ignition power source, such as a DC or AC power source, so that the wet seal can also act as a bus bar for the ignition power. The EM pump may comprise an induction AC type, such as the type shown in FIGS. 4 and 5 . Ceramic SunCell® can contain multiple components, such as EM pumps, reservoirs, reaction cell chambers, and MHD components, which are sealed by flanged gasket joints that can be bolted together. Gaskets may contain carbon or ceramic, such as Thermiculite.

錸(MP 3185℃)對鎵、鎵合金、銀及銅之侵蝕具有抗性,且對藉由氧及水,以及諸如包含氧及水之反應混合物的低能量氫反應混合物的氧化具有抗性;因此,其可充當金屬組件之塗層,諸如EM泵總成5kk之組件,諸如底板5kk1、EM泵管5k6、EM泵匯流條5k2、EM泵噴射器5k61、EM泵噴嘴5q、進水升管5qa、氣體管線710及真空管線711。組件可藉由電鍍、真空沈積、化學沈積及此項技術中已知之其他方法而塗佈有錸。在實施例中,在穿透件處之匯流條或電連接,諸如EM泵匯流條5k2或用於MHD產生器通道308中之MHD電極之穿透件可包含藉由穿透件處之濕式密封件而密封的固體錸。Rhenium (MP 3185°C) is resistant to attack by gallium, gallium alloys, silver and copper, and is resistant to oxidation by oxygen and water, and low energy hydrogen reaction mixtures such as reaction mixtures containing oxygen and water; Thus, it can act as a coating for metal components, such as components of EM pump assembly 5kk, such as base plate 5kk1, EM pump tubes 5k6, EM pump bus bars 5k2, EM pump injectors 5k61, EM pump nozzles 5q, inlet risers 5qa, gas line 710 and vacuum line 711. Components can be coated with rhenium by electroplating, vacuum deposition, chemical deposition, and other methods known in the art. In embodiments, bus bars or electrical connections at penetrations, such as EM pump bus bar 5k2 or penetrations for MHD electrodes in MHD generator channel 308, may include wet vias at penetrations Sealed solid rhenium.

在實施例(圖30A至圖30B)中,熔融金屬以形成熔融金屬之加熱器包含諸如儲集器5c及反應單元腔室5b31(諸如包含石英之單元腔室)周圍之Kanthal電線加熱器的電阻性加熱器。EM泵5kk可包含熱傳遞區塊以將熱量自儲集器5c傳遞至EM泵管5k6。在例示性實施例中,加熱器包含包裹於儲集器及反應單元腔室上之Kanthal電線線圈,其中石墨熱傳遞區塊具有附接至EM泵管5k6之陶瓷熱傳遞糊狀物來將熱量傳遞至管以熔融其中之金屬。較大直徑EM泵管可用以較佳地將熱傳遞至EM泵管以引起EM泵管中之熔融。包含熔融金屬之組件可藉由諸如陶瓷纖維之絕緣體或此項技術中已知之其他高溫絕緣體而良好地隔熱。可緩慢加熱組件以避免熱衝擊。In an embodiment (FIGS. 30A-30B), the heater that melts the metal to form the molten metal comprises a resistance such as a Kanthal wire heater around the reservoir 5c and reaction cell chamber 5b31, such as a cell chamber comprising quartz Sex heater. The EM pump 5kk may contain a heat transfer block to transfer heat from the reservoir 5c to the EM pump tube 5k6. In an exemplary embodiment, the heater comprises a coil of Kanthal wire wrapped over the reservoir and reaction cell chamber, with a graphite heat transfer block having a ceramic heat transfer paste attached to the EM pump tube 5k6 to transfer heat Passed to the tube to melt the metal in it. A larger diameter EM pump tube can be used to better transfer heat to the EM pump tube to cause melting in the EM pump tube. Components containing molten metal can be well insulated by insulators such as ceramic fibers or other high temperature insulators known in the art. Components can be heated slowly to avoid thermal shock.

在一實施例中,SunCell®包含加熱器,諸如電阻性加熱器。加熱器可包含定位於反應單元腔室、儲集器及EM泵管中之至少一者上方之窯爐或鍋爐。在其中EM泵管在窯爐內部之實施例中,EM泵磁體及濕式密封件可經選擇性地隔熱且藉由諸如水冷卻系統之冷卻系統冷卻。在實施例中,每一儲集器可包含在熔融金屬之基底處的底板處之隔熱體,諸如陶瓷絕緣體。絕緣體可包含BN或模製陶瓷,諸如包含氧化鋁、氧化鎂、二氧化矽、氧化鋯或氧化鉿之陶瓷。熔融金屬之基底處的陶瓷絕緣體可包含用於EM泵入口及噴射器之穿透件、氣體及真空管線、熱電偶及與熔融金屬直接接觸的點火匯流條。在實施例中,隔熱體藉由減少至底板之熱量損耗及濕式密封件冷卻而允許熔融金屬在儲集器之基底處熔融。EM泵入口穿透件之直徑可經放大以增大自儲集器中之熔融金屬至EM泵管中之熔融金屬的熱傳遞。EM泵管可包含熱傳遞區塊以將熱量自入口穿透件傳遞至EM泵管。In one embodiment, the SunCell® includes a heater, such as a resistive heater. The heater may comprise a kiln or boiler positioned above at least one of the reaction unit chamber, the reservoir, and the EM pump tube. In embodiments where the EM pump tube is inside the kiln, the EM pump magnet and wet seal may be selectively insulated and cooled by a cooling system such as a water cooling system. In an embodiment, each reservoir may include an insulator, such as a ceramic insulator, at the bottom plate at the base of the molten metal. The insulator may comprise BN or a molded ceramic, such as a ceramic comprising alumina, magnesia, silica, zirconia, or hafnium oxide. The ceramic insulator at the base of the molten metal may include penetrations for the EM pump inlet and injector, gas and vacuum lines, thermocouples, and ignition bus bars in direct contact with the molten metal. In an embodiment, the insulator allows the molten metal to melt at the base of the reservoir by reducing heat loss to the base plate and cooling of the wet seal. The diameter of the EM pump inlet penetration can be enlarged to increase heat transfer from the molten metal in the reservoir to the molten metal in the EM pump tubing. The EM pump tube may contain a heat transfer block to transfer heat from the inlet penetration to the EM pump tube.

在實施例中,底板5kk1可包含諸如不鏽鋼、C、W、Re、Ta、Mo、Nb、Ir、Ru、Hf、Tc、Rh、V、Cr、Zr、Pa、Pt、Th、Lu、Ti、Pd、Tm、Sc、Fe、Y、Er、Co、Ho、Ni及Dy之耐火材料或金屬,其可塗佈有諸如本發明中之一者的襯裡或塗層,該襯裡或塗層對藉由O2 及H2 O中之至少一者的腐蝕及與諸如鎵或銀之熔融金屬形成合金中之至少一者具有抗性。在實施例中,EM泵管可內襯有或塗佈有防止腐蝕或合金形成之材料。EM匯流條可包含對腐蝕或合金形成中之至少一者具有抗性的導體。其中熔融金屬為鎵之例示性EM泵匯流條為Ta、W、Re及Ir。其中熔融金屬為銀之例示性EM泵匯流條為W、Ta、Re、Ni、Co及Cr。在實施例中,EM匯流條可包含具有高熔點之碳或金屬,其可塗佈有對與諸如鎵及銀中之至少一者的熔融金屬形成合金具有抗性之導電塗層。例示性塗層包含碳化物或二硼化物,諸如鈦、鋯及鉿之碳化物或二硼化物。In an embodiment, the base plate 5kk1 may include materials such as stainless steel, C, W, Re, Ta, Mo, Nb, Ir, Ru, Hf, Tc, Rh, V, Cr, Zr, Pa, Pt, Th, Lu, Ti, Refractories or metals of Pd, Tm, Sc, Fe, Y, Er, Co, Ho, Ni and Dy, which may be coated with a lining or coating such as one of the present invention, which H, and O 2 by the corrosion of at least one of the alloy 2 O and at least one of the molten metal, such as silver gallium or resistant form. In embodiments, the EM pump tubing may be lined or coated with materials that prevent corrosion or alloy formation. The EM bus bars may include conductors that are resistant to at least one of corrosion or alloy formation. Exemplary EM pump bus bars where the molten metal is gallium are Ta, W, Re, and Ir. Exemplary EM pump bus bars where the molten metal is silver are W, Ta, Re, Ni, Co, and Cr. In embodiments, the EM bus bars may comprise carbon or metal having a high melting point, which may be coated with a conductive coating that is resistant to alloying with molten metals such as at least one of gallium and silver. Exemplary coatings include carbides or diborides, such as those of titanium, zirconium, and hafnium.

在諸如銅或鎵之熔融金屬可與諸如包含不鏽鋼之底板形成合金的實施例中,底板包含襯裡或塗佈有並不形成合金的材料,諸如Ta、W、Re或陶瓷,諸如BN、富鋁紅柱石或氧化鋯-二氧化鈦-氧化釔。In embodiments where a molten metal such as copper or gallium may be alloyed with a base plate such as containing stainless steel, the base plate contains a liner or is coated with a non-alloying material such as Ta, W, Re or a ceramic such as BN, aluminum rich Andalusite or zirconia-titania-yttria.

在圖30A至圖30B中所示之SunCell®的實施例中,熔融金屬包含鎵或鎵合金,在底板5kk1處之密封件包含墊片,諸如氟化橡膠O形環或碳(Graphoil)墊片,且進水升管5qa之直徑充分大,使得在自兩個儲集器噴射之熔融金屬流接近穩定的情況下,儲集器5c中之熔融金屬的位準保持為大約均勻。每一進水升管之直徑大於銀熔融金屬實施例之直徑,以克服鎵及鎵合金的較高黏度。進水升管直徑可在約3 mm至2 cm範圍內。底板5kk1可為保持低於約500℃之不鏽鋼或可為經塗佈以防止鎵合金形成的陶瓷。例示性底板塗層為富鋁紅柱石及ZTY。In the embodiment of the SunCell® shown in Figures 30A-30B, the molten metal comprises gallium or a gallium alloy, and the seal at the base plate 5kk1 comprises a gasket, such as a Viton O-ring or a carbon (Graphoil) gasket , and the diameter of the inlet riser 5qa is sufficiently large that the level of molten metal in the reservoir 5c remains approximately uniform with the molten metal flow injected from the two reservoirs near steady. The diameter of each inlet riser is larger than that of the silver molten metal embodiment to overcome the higher viscosity of gallium and gallium alloys. The inlet riser diameter can range from about 3 mm to 2 cm. Bottom plate 5kk1 may be stainless steel maintained below about 500°C or may be a ceramic coated to prevent gallium alloy formation. Exemplary backplane coatings are mullite and ZTY.

在實施例中,穿透件之濕式密封件可包含螺紋接頭,熔融銀部分延伸穿過該螺紋接頭以與固化銀電極連續。在例示性實施例中,EM泵匯流條5k2包含濕式密封件,其包含具有相對螺紋接頭之內部經陶瓷塗佈之EM泵管5k6,熔融銀穿過螺紋接頭以接觸包含EM泵功率連接器之固化區段,且至少一個匯流條可視情況進一步包含至點火電源供應器之一個引線的連接器。In an embodiment, the wet seal of the penetration may include a threaded joint through which the molten silver portion extends to be continuous with the solidified silver electrode. In the exemplary embodiment, the EM pump bus bar 5k2 includes a wet seal including an interior ceramic coated EM pump tube 5k6 with opposing threaded joints through which molten silver passes to contact the EM pump power connector including the and at least one of the bus bars optionally further includes a connector to one of the leads of the ignition power supply.

EM泵管5k6可包含對與鎵或銀形成合金具有抗性之材料、襯裡或塗層,諸如W、Ta、Re、Ir、Mo、BN、氧化鋁、富鋁紅柱石、二氧化矽、石英、氧化鋯、氧化鉿、二氧化鈦或本發明中之另一者中之至少一者。在一實施例中,泵管、襯裡或塗層包含碳。碳可藉由懸浮手段施加,諸如經固化且脫氣之噴霧或液體塗層。在一實施例中,諸如Ni之經碳塗佈金屬可對在高溫下形成碳化物具有抗性。在一實施例中,EM泵管5k6可包含填充有經開孔以形成泵管之襯裡或塗佈材料(諸如BN)的金屬管。EM泵管可係分段式的或包含總成,該總成包含複數個部分(圖29C)。該等部分可包含諸如Ta之材料或對與鎵形成合金具有抗性之襯裡或塗層。在一實施例中,該等部分可單獨地經塗佈及組裝。總成可包含以下各者中之至少一者:包含兩個相對匯流條5k2、液體金屬入口及液體金屬出口之殼體;及用以密封諸如接頭套管之殼體的構件。在一實施例中,EM泵匯流條5k2可包含與EM泵管內部之鎵接觸之導電部分,該導電部分對與鎵形成合金具有抗性。導電部分可包含諸如Ta、W、Re或Mo之抗合金材料;或在諸如SS之另一金屬上的抗合金包層或塗層,諸如包含Ta、W、Re、Ir或Mo之包層或塗層。在一實施例中,EM泵管之外部(諸如包含Ta或W之外觀)可塗佈或包覆有本發明之塗層或包層以保護外部免於氧化。在例示性實施例中,Ta EM泵管可塗佈有Re、ZTY或富鋁紅柱石或包覆有不鏽鋼(SS),其中至Ta EM泵管之外部的包層可包含使用焊縫或極端溫度等級的SS膠(諸如J-B Weld 37901)黏附在一起的SS片件。EM pump tube 5k6 may contain materials, linings or coatings resistant to alloying with gallium or silver, such as W, Ta, Re, Ir, Mo, BN, alumina, mullite, silica, quartz , at least one of zirconia, hafnium oxide, titanium dioxide, or another of the present invention. In one embodiment, the pump tube, liner or coating comprises carbon. The carbon can be applied by suspension means, such as a cured and degassed spray or liquid coating. In one embodiment, carbon-coated metals such as Ni may be resistant to carbide formation at high temperatures. In one embodiment, the EM pump tube 5k6 may comprise a metal tube filled with a lining or coating material (such as BN) that is perforated to form the pump tube. The EM pump tubing can be segmented or contain an assembly that contains multiple sections (FIG. 29C). The portions may contain materials such as Ta or a liner or coating resistant to alloying with gallium. In one embodiment, the parts may be individually coated and assembled. The assembly may include at least one of: a housing comprising two opposing bus bars 5k2, a liquid metal inlet and a liquid metal outlet; and means to seal the housing, such as a joint sleeve. In one embodiment, the EM pump bus bar 5k2 may include a conductive portion in contact with gallium inside the EM pump tube, the conductive portion being resistant to alloying with gallium. The conductive portion may comprise an alloy resistant material such as Ta, W, Re or Mo; or an alloy resistant cladding or coating on another metal such as SS, such as a cladding comprising Ta, W, Re, Ir or Mo, or coating. In one embodiment, the exterior of the EM pump tube, such as a Ta or W containing appearance, may be coated or coated with a coating or cladding of the present invention to protect the exterior from oxidation. In an exemplary embodiment, the Ta EM pump tubing may be coated with Re, ZTY, or mullite or clad with stainless steel (SS), wherein the cladding to the exterior of the Ta EM pump tubing may include the use of welds or extreme SS pieces adhered together with temperature grade SS glue (such as JB Weld 37901).

在一實施例,襯裡可包含對與鎵合金化具有抗性之薄壁可撓性金屬,諸如W、Ta、Re、Ir、Mo或Ta管襯裡,其可插入至包含諸如不鏽鋼之另一金屬的EM泵管5k6中。襯裡可插入於預成型EM泵管或接著彎曲之直管中。EM泵匯流條5k2可在將襯裡安裝於所形成EM泵管中之後藉由諸如熔接之手段而附接。EM泵管襯裡可藉由壓縮配件或諸如碳或陶瓷密封劑之密封材料與EM泵匯流條5k2形成緊密密封。In one embodiment, the liner may comprise a thin-walled flexible metal resistant to alloying with gallium, such as W, Ta, Re, Ir, Mo, or Ta tube liner, which may be inserted into another metal comprising another metal, such as stainless steel The EM pump tubing is 5k6. The liner can be inserted into preformed EM pump tubing or straight tubing that is then bent. The EM pump bus bar 5k2 may be attached by means such as welding after installing the liner in the formed EM pump tube. The EM pump tube liner may form a tight seal with the EM pump bus bar 5k2 by means of compression fittings or sealing materials such as carbon or ceramic sealants.

在其中熔融金屬及由熔融金屬形成之任何合金中之至少一者可排出氣體以產生藉由至少部分地阻擋勞侖茲電流而干擾EM泵抽之氣體邊界層的實施例中,磁體5k4之位置處的EM泵管5k6可豎直以打破氣體邊界層。In embodiments in which at least one of the molten metal and any alloy formed from the molten metal can expel gas to create a gas boundary layer that interferes with EM pumping by at least partially blocking the Lorentz current, the location of magnet 5k4 The EM pump tube 5k6 at can be vertical to break the gas boundary layer.

在一實施例中,SunCell®包含干擾消除器,該消除器包含用於減輕或消除至點火電路之電力源與至EM泵5kk之電力源之間的任何干擾之構件。干擾消除器可包含一或多個電路元件及一或多個控制器中之至少一者,以調節點火及EM泵電流之相對電壓、電流、極性、波形及工作循環,從而防止兩個對應電源之間的干擾。In one embodiment, the SunCell® includes an interference canceller that includes means for mitigating or eliminating any interference between the power source to the ignition circuit and the power source to the EM pump 5kk. The interference canceller may include at least one of one or more circuit elements and one or more controllers to adjust the relative voltages, currents, polarities, waveforms, and duty cycles of the ignition and EM pump currents to prevent the two corresponding power supplies interference between.

SunCell®可進一步包含光伏打(PV)轉換器及將光透射至PV轉換器之窗。在圖24至圖25中所示之實施例中,SunCell®包含沿著豎直軸線具有錐形橫截面的反應單元腔室5b31及錐形頂點處之PV窗5b4。具有配對錐形之窗可包含容納PV陣列26a之任何所要幾何形狀,諸如圓形(圖24)或正方形或矩形(圖25)。錐形可抑制PV窗5b4之金屬化以允許光藉由光伏打(PV)轉換器26a進行高效電力轉換。PV轉換器26a可包含諸如本發明之PV電池之聚光PV電池的緻密接收器陣列,且可進一步包含諸如包含微通道板之冷卻系統的冷卻系統。PV窗5b4可包含抑制金屬化之塗層。PV窗可經冷卻以防止PV窗塗層之熱降解。SunCell®可包含至少一個在倒置底座5c2末端處具有杯式或滴液邊緣5c1a之部分倒置底座5c2,其類似於圖23中所示之倒置底座,不同之處在於每一底座及電極10之豎直軸線可以一定角度相對於豎直或z軸定向。角度可在1°至90°之範圍內。在一實施例中,至少一個相對噴射器電極5k61在適用時相對重力在正z方向上斜向地噴射來自其儲集器5c之熔融金屬。噴射泵抽可由安裝於EM泵總成滑台409c上之EM泵總成5kk提供。在例示性實施例中,部分倒置底座5c2及相對噴射器電極5k61在與水平或x軸成135°之軸線上對準,如圖24中所示,或在與水平或x軸成45°之軸線上對準,如圖25中所示。具有插入式儲集器凸緣409g之插入式儲集器409f可藉由儲集器底板409a、套管儲集器409d及套管儲集器凸緣409e安裝至單元腔室5b3。電極可經由電極穿透件10a1穿透儲集器底板409a。噴射器電極之噴嘴5q可浸沒於包含於反應單元腔室5b31及儲集器5c的底部中之液體金屬(諸如液體鎵)中。氣體可供應至反應單元腔室5b31,或腔室可經由諸如409h之氣體埠經抽空。SunCell® may further comprise a photovoltaic (PV) converter and a window that transmits light to the PV converter. In the embodiment shown in Figures 24-25, the SunCell® comprises a reaction cell chamber 5b31 with a tapered cross-section along the vertical axis and a PV window 5b4 at the apex of the tapered shape. A window with a matching taper can include any desired geometry to accommodate the PV array 26a, such as a circle (FIG. 24) or a square or rectangle (FIG. 25). The taper can inhibit the metallization of PV window 5b4 to allow efficient power conversion of light by photovoltaic (PV) converter 26a. PV converter 26a may include a dense receiver array of concentrating PV cells, such as the PV cells of the present invention, and may further include a cooling system such as a cooling system including microchannel plates. PV window 5b4 may include a metallization inhibiting coating. The PV window can be cooled to prevent thermal degradation of the PV window coating. The SunCell® may include at least one partially inverted base 5c2 with a cup or drip edge 5c1a at the end of the inverted base 5c2, which is similar to the inverted base shown in Figure 23, except that each base and electrode 10 are vertical The straight axis can be oriented at an angle relative to the vertical or z axis. The angle can be in the range of 1° to 90°. In one embodiment, at least one opposing injector electrode 5k61, where applicable, injects molten metal from its reservoir 5c obliquely in the positive z-direction relative to gravity. Jet pumping can be provided by the EM pump assembly 5kk mounted on the EM pump assembly slide 409c. In an exemplary embodiment, the partially inverted base 5c2 and opposing injector electrode 5k61 are aligned on an axis at 135° to the horizontal or x-axis, as shown in Figure 24, or at 45° to the horizontal or x-axis On-axis alignment as shown in Figure 25. A plug-in reservoir 409f with a plug-in reservoir flange 409g can be mounted to the cell chamber 5b3 by means of the reservoir base plate 409a, casing reservoir 409d, and casing reservoir flange 409e. The electrodes can penetrate the reservoir bottom plate 409a via the electrode penetrations 10a1. The nozzle 5q of the injector electrode may be immersed in a liquid metal, such as liquid gallium, contained in the reaction cell chamber 5b31 and the bottom of the reservoir 5c. Gas can be supplied to reaction cell chamber 5b31, or the chamber can be evacuated via a gas port such as 409h.

在圖26中所示之替代實施例中,SunCell®包含沿著負豎直軸線具有錐形橫截面的反應單元腔室5b31,及在包含反應單元腔室5b31之頂部的錐形之較大直徑末端處的PV窗5b4,實施例的相對錐形展示於圖24至圖25中。在實施例中,SunCell®包含反應單元腔室5b31,其包含直柱幾何形狀。噴射器噴嘴及底座相對電極可在圓柱體之相對末端處在豎直軸線上對準或沿著與豎直軸線傾斜的線對準。In an alternative embodiment shown in Figure 26, the SunCell® comprises a reaction cell chamber 5b31 with a tapered cross-section along the negative vertical axis, and the larger diameter of the cone at the top comprising the reaction cell chamber 5b31 The PV window 5b4 at the end, the relative taper of the embodiment is shown in Figures 24-25. In an embodiment, the SunCell® comprises reaction cell chamber 5b31, which comprises a straight column geometry. The injector nozzle and base opposing electrodes may be aligned on the vertical axis at opposite ends of the cylinder or along a line inclined to the vertical axis.

在圖24及圖25中所示之實施例中,電極10及PV面板26a可互換位置及定向,使得熔融金屬噴射器5k6及噴嘴5q豎直地噴射熔融金屬至相對電極10,且PV面板26a接收來自電漿側的光。In the embodiment shown in Figures 24 and 25, electrode 10 and PV panel 26a may be interchanged in position and orientation such that molten metal injector 5k6 and nozzle 5q spray molten metal vertically to opposing electrode 10, and PV panel 26a Receives light from the plasma side.

SunCell可包含透明窗以充當對窗透明的波長之光源。SunCell可包含可充當黑體光源之黑體輻射器5b4。在實施例中,SunCell®包含光源(例如,來自反應之電漿),其中經由窗發射之低能量氫電漿光用於所需照明應用,諸如房間、街道、商業或工業照明或用於諸如化學處理或微影之加熱或處理。The SunCell may contain a transparent window to act as a light source for wavelengths that are transparent to the window. The SunCell may include a blackbody radiator 5b4 that can act as a blackbody light source. In an embodiment, the SunCell® comprises a light source (eg, plasma from a reaction), wherein the low energy hydrogen plasma light emitted through a window is used for desired lighting applications, such as room, street, commercial or industrial lighting or for applications such as Chemical treatment or lithography heating or processing.

在一實施例中,頂部電極包含正電極。SunCell可包含在正電極後方之光學窗及光伏打(PV)面板。正電極可充當黑體輻射器以提供PV面板之熱量、光及照明中之至少一者。在後一情況下,PV面板之照明自入射光產生電力。在一實施例中,光學窗可包含真空緊密之外窗及內自旋窗以防止熔融金屬黏附至內窗及使窗失透。在實施例中,正電極可加熱黑體輻射器,黑體輻射器將光通過PV窗發射至PV面板。黑體輻射器可連接至正電極以藉由傳導以及輻射自其接收熱量。黑體輻射可包含耐火金屬,諸如鎢(M.P. = 3422℃)或鉭(M.P. = 3020 ℃)之耐火金屬;或諸如本發明中之一者的陶瓷,諸如石墨(昇華點=3642℃)、硼化物、碳化物、氮化物及諸如金屬氧化物之氧化物之群組中的一或多者,該金屬氧化物諸如氧化鋁、氧化鋯、氧化釔穩定之氧化鋯、氧化鎂、氧化鉿或二氧化釷(ThO2 );過渡金屬二硼化物,諸如硼化鉿(HfB2 )、二硼化鋯(ZrB2 )、硼化鈮(NbB2 );金屬氮化物,諸如氮化鉿(HfN)、氮化鋯(ZrN)、氮化鈦(TiN);及碳化物,諸如碳化鈦(TiC)、碳化鋯或碳化鉭(TaC)及其相關聯複合物。具有所要高熔點之例示性陶瓷為氧化鎂(MgO) (M.P. = 2852 ℃)、氧化鋯(ZrO) (M.P. = 2715 ℃)、氮化硼(BN) (M.P. = 2973 ℃)、二氧化鋯(ZrO2 ) (M.P. = 2715 ℃)、硼化鉿(HfB2 ) (M.P. = 3380 ℃)、碳化鉿(HfC) (M.P. = 3900 ℃)、Ta4 HfC5 (M.P. = 4000 ℃)、Ta4 HfC5 TaX4 HfCX5 (4215 ℃)、氮化鉿(HfN) (M.P. = 3385 ℃)、二硼化鋯(ZrB2 ) (M.P. = 3246 ℃)、碳化鋯(ZrC) (M.P. = 3400 ℃)、氮化鋯(ZrN) (M.P. = 2950 ℃)、硼化鈦(TiB2 ) (M.P. = 3225 ℃)、碳化鈦(TiC) (M.P. = 3100 ℃)、氮化鈦(TiN) (M.P. = 2950 ℃)、碳化矽(SiC) (M.P. = 2820 ℃)、硼化鉭(TaB2 ) (M.P. = 3040 ℃)、碳化鉭(TaC) (M.P. = 3800 ℃)、氮化鉭(TaN) (M.P. = 2700 ℃)、碳化鈮(NbC) (M.P. = 3490 ℃)、氮化鈮(NbN) (M.P. = 2573 ℃)、碳化釩(VC) (M.P. = 2810 ℃)及氮化釩(VN) (M.P. = 2050 ℃)。In one embodiment, the top electrode includes a positive electrode. SunCell can include an optical window and photovoltaic (PV) panel behind the positive electrode. The positive electrode can act as a black body radiator to provide at least one of heat, light, and illumination of the PV panel. In the latter case, the illumination of the PV panel generates electricity from incident light. In one embodiment, the optical window may include a vacuum tight outer window and an inner spin window to prevent molten metal from adhering to and devitrifying the inner window. In an embodiment, the positive electrode can heat a black body radiator, which emits light through the PV window to the PV panel. A blackbody radiator can be connected to the positive electrode to receive heat therefrom by conduction as well as radiation. Blackbody radiation may contain refractory metals, such as tungsten (MP = 3422°C) or tantalum (MP = 3020°C); or ceramics such as one of the present invention, such as graphite (sublimation point = 3642°C), borides , carbides, nitrides, and one or more of the group of oxides such as metal oxides such as alumina, zirconia, yttria-stabilized zirconia, magnesia, hafnium oxide, or dioxide Thorium (ThO 2 ); transition metal diborides such as hafnium boride (HfB 2 ), zirconium diboride (ZrB 2 ), niobium boride (NbB 2 ); metal nitrides such as hafnium nitride (HfN), Zirconium nitride (ZrN), titanium nitride (TiN); and carbides such as titanium carbide (TiC), zirconium carbide or tantalum carbide (TaC) and associated composites thereof. Exemplary ceramics with the desired high melting point are magnesium oxide (MgO) (MP = 2852°C), zirconia (ZrO) (MP = 2715°C), boron nitride (BN) (MP = 2973°C), zirconium dioxide ( ZrO 2 ) (MP = 2715 ℃), Hafnium Boride (HfB 2 ) (MP = 3380 ℃), Hafnium Carbide (HfC) (MP = 3900 ℃), Ta 4 HfC 5 (MP = 4000 ℃), Ta 4 HfC 5 TaX 4 HfCX 5 (4215 ℃), Hafnium Nitride (HfN) (MP = 3385 ℃), Zirconium Diboride (ZrB 2 ) (MP = 3246 ℃), Zirconium Carbide (ZrC) (MP = 3400 ℃), Zirconium Nitride (ZrN) (MP = 2950 ℃), Titanium Boride (TiB 2 ) (MP = 3225 ℃), Titanium Carbide (TiC) (MP = 3100 ℃), Titanium Nitride (TiN) (MP = 2950 ℃) ), Silicon Carbide (SiC) (MP = 2820 ℃), Tantalum Boride (TaB 2 ) (MP = 3040 ℃), Tantalum Carbide (TaC) (MP = 3800 ℃), Tantalum Nitride (TaN) (MP = 2700 ℃), Niobium Carbide (NbC) (MP = 3490 ℃), Niobium Nitride (NbN) (MP = 2573 ℃), Vanadium Carbide (VC) (MP = 2810 ℃) and Vanadium Nitride (VN) (MP = 2050 °C).

在一實施例中,SunCell®包含具有儲集器414之交叉連接通道的感應點火系統、諸如感應EM泵之泵、傳導EM泵或噴射器儲集器及充當相對電極之非噴射器儲集器中之機械泵。儲集器414之交叉連接通道可包含限制流量構件以使得非噴射器儲集器可保持大致充滿。在一實施例中,儲集器414之交叉連接通道可包含不流動之導體,諸如固體導體,諸如固體銀。In one embodiment, the SunCell® includes an inductive ignition system with cross-connected channels of reservoir 414, a pump such as an inductive EM pump, a conductive EM pump or injector reservoir, and a non-injector reservoir that acts as an opposing electrode The mechanical pump. The cross-connecting passages of the reservoir 414 may include flow restricting members so that the non-ejector reservoir may remain substantially full. In one embodiment, the cross-connect channels of the reservoir 414 may contain a non-flowing conductor, such as a solid conductor, such as solid silver.

在一實施例中(圖27),SunCell®包含在陰極與陽極匯流條或電流連接器之間的電流連接器或儲集器跨接電纜414a。單元主體5b3可包含非導體,或單元主體5b3可包含導體,諸如不鏽鋼,其中至少一個電極與單元主體5b3電隔離,使得迫使感應電流在電極之間流動。電流連接器或跨接電纜可將底座電極8及電連接器中之至少一者中之至少一者連接至EM泵及與EM泵之儲集器5c中之金屬接觸的匯流條。包含諸如倒置底座5c2或與z軸成一定角度的底座5c2的底座電極的SunCell®之陰極及陽極(諸如圖23至圖26中所示的陰極及陽極)可包含陽極與陰極之間的電連接器,該電連接器藉由至少一個EM泵5kk噴射之熔融金屬流形成閉合電流迴路。金屬流可藉由接觸儲集器5c中之熔融金屬EM泵噴射器5k61及5q或金屬及底座之電極中之至少一者來閉合導電迴路。SunCell®可進一步包含點火變壓器401,其具有在閉合導電迴路中之磁軛402以在迴路之熔融金屬中誘發充當單迴路短路二次電流之電流。變壓器401及402可誘發閉合電流迴路中之點火電流。在例示性實施例中,初級繞組可在以下之至少一個頻率範圍中操作:1 Hz至100 kHz、10 Hz至10 kHz及60 Hz至2000 Hz,輸入電壓可在以下之至少一個範圍中操作:約10 V至10 MV、50 V至1 MV、50 V至100 kV、50 V至10 kV、50 V至1 kV及100 V至480 V,輸入電流可在以下之至少一個範圍中操作:約1 A至1 MA、10 A至100 kA、10 A至10 kA、10 A至1 kA及30 A至200 A,點火電壓可在以下之至少一個範圍中操作:約0.1 V至100 kV、1 V至10 kV、1 V至1 kV及1 V至50 V,且點火電流可在以下範圍中:約10 A至1 MA、100 A至100 kA、100 A至10 kA及100 A至5 kA。在一實施例中,電漿氣體可包含任何氣體,諸如稀有氣體、氫氣、水蒸汽、二氧化碳、氮氣、氧氣及空氣中之至少一者。氣體壓力可在以下之至少一個範圍內:約1微托至100 atm、1毫托至10 atm、100毫托至5 atm及1托至1 atm。In one embodiment (FIG. 27), the SunCell® includes a current connector or reservoir jumper cable 414a between the cathode and anode bus bars or current connectors. The cell body 5b3 may comprise a non-conductor, or the cell body 5b3 may comprise a conductor, such as stainless steel, with at least one electrode being electrically isolated from the cell body 5b3 such that an induced current is forced to flow between the electrodes. A current connector or jumper cable can connect at least one of the base electrode 8 and at least one of the electrical connectors to the EM pump and the bus bar in contact with the metal in the reservoir 5c of the EM pump. SunCell® cathodes and anodes (such as those shown in Figures 23-26) that include base electrodes such as inverted base 5c2 or base 5c2 at an angle to the z-axis may include electrical connections between anode and cathode The electrical connector forms a closed current loop by the flow of molten metal injected by at least one EM pump 5kk. The metal flow can close the conductive loop by contacting the molten metal EM pump injectors 5k61 and 5q in the reservoir 5c or at least one of the electrodes of the metal and the base. SunCell® may further comprise an ignition transformer 401 having a yoke 402 in a closed conductive loop to induce a current in the molten metal of the loop that acts as a single loop short circuit secondary current. Transformers 401 and 402 induce ignition current in a closed current loop. In an exemplary embodiment, the primary winding is operable in at least one of the following frequency ranges: 1 Hz to 100 kHz, 10 Hz to 10 kHz, and 60 Hz to 2000 Hz, and the input voltage is operable in at least one of the following ranges: Approx. 10 V to 10 MV, 50 V to 1 MV, 50 V to 100 kV, 50 V to 10 kV, 50 V to 1 kV, and 100 V to 480 V, with input current operable in at least one of the following ranges: Approx. 1 A to 1 MA, 10 A to 100 kA, 10 A to 10 kA, 10 A to 1 kA, and 30 A to 200 A, the ignition voltage can be operated in at least one of the following ranges: approximately 0.1 V to 100 kV, 1 V to 10 kV, 1 V to 1 kV, and 1 V to 50 V, and the ignition current can be in the following ranges: about 10 A to 1 MA, 100 A to 100 kA, 100 A to 10 kA, and 100 A to 5 kA . In one embodiment, the plasma gas may include any gas, such as at least one of noble gas, hydrogen, water vapor, carbon dioxide, nitrogen, oxygen, and air. The gas pressure may be in at least one of the following ranges: about 1 microtorr to 100 atm, 1 mtorr to 10 atm, 100 mtorr to 5 atm, and 1 torr to 1 atm.

例示性測試實施例包含具有兩個交叉之EM泵噴射器之石英SunCell®,諸如圖10中所示之SunCell®。各自包含包括例示性Fe基非晶形芯之感應型電磁泵的兩個熔融金屬噴射器泵抽鎵流,使得其相交以產生連結1000 Hz變壓器初級繞組之三角形電流迴路。電流迴路包含在儲集器之基底處的流、兩個鎵合金儲集器及交叉通道。迴路充當至1000 Hz變壓器初級繞組之短路次級繞組。次級繞組中之感應電流以低功率消耗保持大氣空氣中之電漿。感應系統實現了本發明之基於銀之工作流體SunCell®磁流體動力發電機,其中低能量氫反應物經供應至根據本發明之反應單元腔室。具體言之,(i)點火變壓器之初級迴路在1000 Hz下操作,(ii)輸入電壓為100 V至150 V,且(iii)輸入電流為25 A。EM泵電流變壓器之60 Hz電壓及電流分別為300 V及6.6 A。每一EM泵之電磁體在60 Hz下經由串聯之299µ F電容器供電為15至20 A,以使所得磁場之相位與EM泵電流變壓器之勞侖茲交叉電流匹配。Exemplary test examples include a quartz SunCell® with two crossed EM pump injectors, such as the SunCell® shown in FIG. 10 . Two molten metal injectors, each comprising an induction-type electromagnetic pump including an exemplary Fe-based amorphous core, pump gallium streams such that they intersect to create a triangular current loop connecting the primary windings of the 1000 Hz transformer. The current loop includes flow at the base of the reservoir, two gallium alloy reservoirs, and a crossover channel. The loop acts as a short-circuited secondary winding to the 1000 Hz transformer primary winding. The induced current in the secondary winding maintains the plasma in the atmospheric air with low power consumption. The induction system implements the silver-based working fluid SunCell® magnetohydrodynamic generator of the present invention, wherein the low energy hydrogen reactant is supplied to the reaction cell chamber according to the present invention. Specifically, (i) the primary loop of the ignition transformer was operated at 1000 Hz, (ii) the input voltage was 100 V to 150 V, and (iii) the input current was 25 A. The 60 Hz voltage and current of the EM pump current transformer were 300 V and 6.6 A, respectively. Each of the electromagnet EM pump at 60 Hz 299 μ F capacitor of the power supply via a series of 15 to 20 A, so that the phase of the resultant magnetic field and Lorentz EM pump current transformers crossover current matching.

變壓器係藉由1000 Hz AC電源供應器供電。在一實施例中,點火變壓器可藉由諸如單相可變頻率驅動器(VFD)之可變頻率驅動器來供電。在一實施例中,使VFD輸入功率匹配以提供進一步提供所要點火電壓及電流之輸出電壓及電流,其中針對VFD之對應輸出電壓及電流選擇匝數及線規格。感應點火電流可在以下之至少一個範圍內:約10 A至100 kA、100 A至10 kA及100 A至5 kA。感應點火電壓可在以下之至少一個範圍中:0.5 V至1 kV、1 V至100 V及1 V至10V。頻率可在以下之至少一個範圍內:約1 Hz至100 kHz、10 Hz至10 kHz及10 Hz至1 kHz。例示性VFD為ATO 7.5 kW、220 V至240 V輸出單相500 Hz VFD。The transformer is powered by a 1000 Hz AC power supply. In one embodiment, the ignition transformer may be powered by a variable frequency drive such as a single phase variable frequency drive (VFD). In one embodiment, the VFD input power is matched to provide an output voltage and current that further provides the desired firing voltage and current, with the number of turns and wire size selected for the VFD's corresponding output voltage and current. The induced ignition current may be in at least one of the following ranges: about 10 A to 100 kA, 100 A to 10 kA, and 100 A to 5 kA. The induced ignition voltage may be in at least one of the following ranges: 0.5 V to 1 kV, 1 V to 100 V, and 1 V to 10V. The frequency may be in at least one of the following ranges: about 1 Hz to 100 kHz, 10 Hz to 10 kHz, and 10 Hz to 1 kHz. An exemplary VFD is an ATO 7.5 kW, 220 V to 240 V output single phase 500 Hz VFD.

另一例示性測試實施例包含具有一個EM泵噴射器電極及底座相對電極之Pyrex SunCell®,兩電極間存在連接式跨接電纜414a,諸如圖27中所示之SunCell®。包含DC型電磁泵之熔融金屬噴射器泵抽與底座相對電極連接之鎵合金流,以閉合包含流、EM泵儲集器,及在每一端連接至對應電極匯流條且穿過60 Hz變壓器初級繞組之跨接電纜的電流迴路。迴路充當至60 Hz變壓器初級繞組之短路次級繞組。次級繞組中之感應電流以低功率消耗保持大氣空氣中之電漿。感應點火系統實現了本發明之基於銀或鎵之熔融金屬SunCell®發電機,其中低能量氫反應物經供應至根據本發明之反應單元腔室。具體言之,(i)點火變壓器之初級迴路在60 Hz下操作,(ii)輸入電壓為300 V峰值,且(iii)輸入電流為29 A峰值。最大感應電漿點火電流為1.38 kA。Another exemplary test example includes a Pyrex SunCell® with one EM pump injector electrode and a base opposing electrode with a connecting jumper cable 414a between the two electrodes, such as the SunCell® shown in FIG. 27 . A molten metal injector comprising a DC-type electromagnetic pump pumps a flow of gallium alloy connected to the opposite electrode of the base to close the contained flow, the EM pump reservoir, and is connected at each end to the corresponding electrode bus bar and through the 60 Hz transformer primary The current loop of the jumper cable between the windings. The loop acts as a short circuited secondary winding to the primary winding of the 60 Hz transformer. The induced current in the secondary winding maintains the plasma in the atmospheric air with low power consumption. The induction ignition system implements the silver or gallium based molten metal SunCell® generator of the present invention, wherein a low energy hydrogen reactant is supplied to the reaction cell chamber according to the present invention. Specifically, (i) the primary loop of the ignition transformer was operated at 60 Hz, (ii) the input voltage was 300 V peak, and (iii) the input current was 29 A peak. The maximum induced plasma ignition current is 1.38 kA.

在一實施例中,電力源或點火電源包含非直流電(DC)源,諸如時間相依性電流源,諸如脈衝或交流電(AC)源。峰值電流可在諸如以下之至少一個範圍內:10 A至100 MA、100 A至10 MA、100 A至1 MA、100 A至100 kA、100 A至10 kA及100 A至1 kA。峰值電壓可在以下之至少一個範圍中:0.5 V至1 kV、1 V至100 V及1 V至10V。在一實施例中,EM泵電源及AC點火系統可經選擇以避免將導致所要點火波形之無效EM泵抽及畸變中之至少一者的推斷。In one embodiment, the power source or ignition power source comprises a non-direct current (DC) source, such as a time-dependent current source, such as a pulsed or alternating current (AC) source. The peak current may be in at least one range such as: 10 A to 100 MA, 100 A to 10 MA, 100 A to 1 MA, 100 A to 100 kA, 100 A to 10 kA, and 100 A to 1 kA. The peak voltage may be in at least one of the following ranges: 0.5 V to 1 kV, 1 V to 100 V, and 1 V to 10V. In one embodiment, the EM pump power supply and AC ignition system may be selected to avoid inferences that would result in at least one of ineffective EM pumping and distortion of the desired ignition waveform.

在一實施例中,供應點火電流之電力源或點火電源可包含DC、AC及DC與AC電源供應器中之至少一者,諸如由AC、DC及DC與AC電力中之至少一者供電的電源,諸如交換式電源供應器、可變頻率驅動器(VFD)、AC至AC轉換器、DC至DC轉換器及AC至DC轉換器、DC至AC轉換器、整流器、全波整流器、反相器、光伏打陣列發電機、磁流體動力發電機,以及諸如朗肯或布累登循環發電機、熱離子發電機及熱電產生器之習知發電機。點火電源可包含至少一個電路元件以產生所要點火電流,諸如躍遷、IGBT、電感器、變壓器、電容器、整流器、諸如H橋接器之橋接器、電阻器、運算放大器,或此項技術中已知之另一電路元件或功率調節裝置。在例示性實施例中,點火電源可包含全波經校正高頻源,諸如在約50%工作循環或更大下供應正方波脈衝之高頻源。頻率可在約60 Hz至100 kHz範圍內。例示性供應在約10 kHz至40 kHz範圍內之頻率下提供約30至40V及3000至5000 A。在一實施例中,用於供應點火電流之電力可包含可與AC變壓器或電源供應器串聯之電容器組,其充電至諸如在1 V至100 V範圍內之電壓的初始偏移電壓,其中所得電壓可包含具有AC調變之DC電壓。DC分量可以取決於其正常放電時間常數之速率衰減,或可增大或消除放電時間,其中點火電源進一步包含對電容器組再充電之DC電源供應器。DV電壓分量可輔助起始電漿,其中電漿此後可保持有較低電壓。諸如電容器組之點火電源供應器可包含用以將點火功率連接至電極及斷開之快速開關,諸如由伺服電機或螺線管控制之開關。In one embodiment, the power source or ignition power supply that supplies the ignition current may comprise at least one of DC, AC and DC and AC power supplies, such as powered by at least one of AC, DC and DC and AC power Power supplies such as switching power supplies, variable frequency drives (VFDs), AC to AC converters, DC to DC converters and AC to DC converters, DC to AC converters, rectifiers, full wave rectifiers, inverters , photovoltaic array generators, magnetohydrodynamic generators, and conventional generators such as Rankine or Braden cycle generators, thermionic generators, and thermoelectric generators. The ignition power supply may include at least one circuit element to generate the desired ignition current, such as transitions, IGBTs, inductors, transformers, capacitors, rectifiers, bridges such as H-bridges, resistors, operational amplifiers, or others known in the art A circuit element or power conditioning device. In an exemplary embodiment, the ignition power supply may comprise a full wave corrected high frequency source, such as a high frequency source that supplies square wave pulses at about 50% duty cycle or greater. The frequency can be in the range of about 60 Hz to 100 kHz. An exemplary supply provides about 30 to 40 V and 3000 to 5000 A at frequencies in the range of about 10 kHz to 40 kHz. In one embodiment, the power used to supply the ignition current may comprise a capacitor bank, which may be connected in series with an AC transformer or power supply, charged to an initial offset voltage such as a voltage in the range of 1 V to 100 V, where the resulting The voltage may include a DC voltage with AC modulation. The DC component may decay at a rate depending on its normal discharge time constant, or may increase or eliminate the discharge time, wherein the ignition power supply further includes a DC power supply to recharge the capacitor bank. The DV voltage component can assist in starting the plasma, where the plasma can thereafter remain at a lower voltage. Ignition power supplies, such as capacitor banks, may include quick switches to connect and disconnect ignition power to the electrodes, such as switches controlled by servo motors or solenoids.

在實施例中,低能量氫電漿及點火電流中之至少一者可包含電弧電流。電弧電流可具有電流愈高,電壓愈低的特性。在實施例中,反應單元腔室壁及電極中之至少一者經選擇以形成及支援低能量氫電漿電流及包含電弧電流之點火電流中之至少一者,該電弧電流在極高電流下具有極低電壓。電流密度可在以下之至少一個範圍內:約1 A/cm2 至100 MA/cm2 、10 A/cm2 至10 MA/cm2 、100 A/cm2 至10 MA/cm2 及1 kA/cm2 至1 MA/cm2In an embodiment, at least one of the low energy hydrogen plasma and the ignition current may comprise an arc current. The arc current may have the characteristics of higher current and lower voltage. In an embodiment, at least one of the reaction unit chamber walls and the electrodes are selected to form and support at least one of a low energy hydrogen plasma current and an ignition current including an arc current at very high currents Has very low voltage. The current density can be in at least one of the following ranges: about 1 A/cm 2 to 100 MA/cm 2 , 10 A/cm 2 to 10 MA/cm 2 , 100 A/cm 2 to 10 MA/cm 2 , and 1 kA /cm 2 to 1 MA/cm 2 .

在一實施例中,點火系統可將高起始功率施加至電漿且接著在電阻下降之後降低點火功率。電阻可由於以下各者中之至少一者而下降:由於點火電路中(諸如電極或熔融金屬流上)之任何氧化物之減少的導電性增大,及電漿形成。在例示性實施例中,點火系統包含與AC串聯之電容器組以產生高功率DC之AC調變,其中DC電壓隨電容器之放電而衰減且僅剩餘較低AC功率。In one embodiment, the ignition system may apply a high initial power to the plasma and then reduce the ignition power after the resistance drops. The resistance may drop due to at least one of: increased conductivity due to the reduction of any oxides in the ignition circuit (such as on electrodes or molten metal flow), and plasma formation. In an exemplary embodiment, the ignition system includes a capacitor bank in series with the AC to produce AC modulation of high power DC, where the DC voltage decays as the capacitor discharges and only lower AC power remains.

在一實施例中,熔融金屬可經選擇以形成揮發性更強,或包含揮發性更強之組分的氣態奈米粒子,以增大電漿之導電性。例如,熔融金屬的揮發性可更強或包含揮發性比銀強之組分(例如,熔融金屬可具有小於銀沸點之沸點)。在例示性實施例中,相比於鎵,熔融金屬可包含在給定溫度下具有增大之揮發性的鎵合金,因為與2400℃之鎵沸點相比,鎵合金在約1300℃下沸騰。在另一例示性實施例中,銀在存在痕量氧的情況下可在其熔點下發煙。鋅為展現奈米粒子發煙之另一例示性金屬。鋅形成非揮發性氧化物(B. P. =1974℃),且ZnO可藉由氫還原。ZnO可藉由低能量氫反應混合物之氫還原。在實施例中,熔融金屬可包含鋅金屬與鎵或鎵合金之混合物或合金。每一金屬之比率可經選擇以達成所要奈米粒子形成以及功率產生及MHD功率轉換中之至少一者的增強。由於較高電漿導電性之離子再結合率增大可在降低之點火電流或不存在點火電流之情況下保持低能量氫反應及電漿。在實施例中,SunCell®包含冷凝器以使諸如鎵合金之汽化金屬或氣溶膠化奈米粒子金屬回流。在一實施例中,呈氣相之回流金屬在低至不存在點火功率之情況下保持低能量氫反應。在例示性實施例中,單元在約鎵合金之沸點下操作,使得回流鎵合金金屬在低至無點火功率之情況下保持低能量氫反應,且在另一例示性實施例中,回流銀奈米粒子在低至無點火功率之情況下保持低能量氫反應。In one embodiment, the molten metal may be selected to form gaseous nanoparticles that are more volatile, or contain more volatile components, to increase the conductivity of the plasma. For example, the molten metal may be more volatile or contain components that are more volatile than silver (eg, the molten metal may have a boiling point less than that of silver). In an exemplary embodiment, the molten metal may comprise a gallium alloy having increased volatility at a given temperature compared to gallium, since gallium alloys boil at about 1300°C compared to the gallium boiling point of 2400°C. In another exemplary embodiment, silver can fumes at its melting point in the presence of trace amounts of oxygen. Zinc is another exemplary metal that exhibits nanoparticle fumes. Zinc forms non-volatile oxides (B. P. =1974°C), and ZnO can be reduced by hydrogen. ZnO can be reduced by hydrogen from the low energy hydrogen reaction mixture. In an embodiment, the molten metal may comprise a mixture or alloy of zinc metal and gallium or a gallium alloy. The ratio of each metal can be selected to achieve the desired nanoparticle formation and enhancement of at least one of power generation and MHD power conversion. The increased ion recombination rate due to higher plasma conductivity can maintain low energy hydrogen reactions and plasma at reduced ignition current or in the absence of ignition current. In an embodiment, SunCell® includes a condenser to reflow vaporized metals such as gallium alloys or aerosolized nanoparticle metals. In one embodiment, the refluxing metal in the gas phase maintains the low energy hydrogen reaction with low to no ignition power. In an exemplary embodiment, the cell is operated at about the boiling point of the gallium alloy, such that the refluxing gallium alloy metal maintains a low energy hydrogen reaction with low to no ignition power, and in another exemplary embodiment, the refluxing silver navy Rice particles maintain a low energy hydrogen reaction with low to no ignition power.

在一實施例中,相對於其他候選物具有低沸點或低汽化熱之金屬之一或多個性質,及在小於其沸點之溫度下形成奈米粒子煙之能力使得其適用作MHD系統之工作氣體,其中工作氣體在充分加熱時形成氣相且提供針對MHD轉換系統之壓力體積或動能功產生電力。In one embodiment, one or more properties of metals having low boiling points or low heats of vaporization relative to other candidates, and the ability to form nanoparticle smoke at temperatures below their boiling points make them suitable for use in MHD systems Gas in which the working gas forms a gas phase when sufficiently heated and provides the pressure volume or kinetic energy function for the MHD conversion system to generate electricity.

在一實施例中,底座電極8可凹入於插入式儲集器409f中,其中泵抽熔融金屬填充諸如5c1a之凹穴以動態地形成與底座電極8接觸之熔融金屬池。底座電極8可包含導體,該導體在SunCell®之操作溫度下不與諸如鎵之熔融金屬形成合金。例示性底座電極8包含鎢、鉭、不鏽鋼或鉬,其中Mo並不在低於600℃之操作溫度下與鎵形成諸如Mo3 Ga之合金。在實施例中,EM泵之入口可包含過濾器5qa1,諸如阻擋合金粒子同時允許鎵進入之篩網或網狀物。為了增大表面區域,過濾器可豎直及水平中之至少一者地延伸且連接至入口。過濾器可包含防止與鎵形成合金之材料,諸如不鏽鋼(SS)、鉭或鎢。例示性入口過濾器包含直徑等於入口直徑但豎直升高之SS圓柱體。作為常規維護之部分,可週期性地清潔過濾器。In one embodiment, the base electrode 8 may be recessed into the plug-in reservoir 409f, with pumped molten metal filling the cavity such as 5c1a to dynamically form a pool of molten metal in contact with the base electrode 8. The base electrode 8 may comprise a conductor that does not alloy with molten metals such as gallium at the operating temperatures of the SunCell®. Exemplary base electrode 8 comprising tungsten, tantalum, molybdenum, or stainless steel, wherein Mo is not less than 3 Ga such as a Ga alloy of Mo and formation of operating at 600 ℃. In an embodiment, the inlet of the EM pump may include a filter 5qa1, such as a screen or mesh that blocks alloy particles while allowing gallium to enter. To increase the surface area, the filter may extend and connect to the inlet at least one of vertically and horizontally. The filter may contain a material that prevents alloying with gallium, such as stainless steel (SS), tantalum or tungsten. An exemplary inlet filter comprises a SS cylinder with a diameter equal to the inlet diameter but raised vertically. Filters can be cleaned periodically as part of routine maintenance.

在一實施例中,非噴射器電極可間歇地浸沒於熔融金屬中以便使其冷卻。在實施例中,SunCell®包含噴射器EM泵及其儲集器5c以及至少一個額外EM泵,且可包含用於額外EM泵之另一儲集器。使用額外儲集器,額外EM泵可進行以下中之至少一者:(i)可逆地將熔融金屬泵抽至反應單元腔室中以間歇地浸沒非噴射器電極以便使其冷卻;及(ii)將熔融金屬泵抽至非噴射器電極上以便使其冷卻。SunCell®可包含:冷卻劑槽,其具有冷卻劑;冷卻劑泵,其用於使冷卻劑循環通過非噴射器電極;及熱交換器,其用以排出來自冷卻劑的熱量。在一實施例中,非噴射器電極可在通道或插管處包含冷卻劑,諸如水、熔融鹽、熔融金屬或此項技術中已知之另一冷卻劑,以冷卻非噴射器電極。In one embodiment, the non-injector electrode may be intermittently immersed in the molten metal in order to cool it. In an embodiment, the SunCell® includes the ejector EM pump and its reservoir 5c and at least one additional EM pump, and may include another reservoir for the additional EM pump. Using the additional reservoir, the additional EM pump can at least one of: (i) reversibly pump molten metal into the reaction cell chamber to intermittently submerge the non-injector electrodes to cool them; and (ii) ) pump the molten metal onto the non-injector electrode to allow it to cool. The SunCell® may include: a coolant tank with coolant; a coolant pump for circulating coolant through the non-injector electrodes; and a heat exchanger for removing heat from the coolant. In one embodiment, the non-injector electrode may contain a coolant, such as water, molten salt, molten metal, or another coolant known in the art, at the channel or cannula to cool the non-injector electrode.

在圖23中所示之倒置實施例中,使SunCell®旋轉180°,使得非噴射器電極處於單元底部且噴射器電極處於反應單元腔室頂部,使得熔融金屬沿著負z軸噴射。非噴射器電極及噴射器電極中之至少一者可安裝在對應板中且可藉由對應凸緣密封件連接至反應單元腔室。密封件可包含墊片,該墊片包含並不與鎵形成合金的材料,諸如Ta、W或陶瓷,諸如本發明或此項技術中已知的一者。底部處之反應單元腔室區段可充當儲集器,可消除之前的儲集器,且EM泵可包含新底部儲集器中之進水升管,該進水升管可穿透底部底板,連接至EM泵管,且將熔融金屬流提供至EM泵,其中EM泵管之出口部分穿透頂板且連接至反應單元腔室內部之噴嘴。在操作期間,EM泵可泵抽來自底部儲集器之熔融金屬,且將其噴射至反應單元腔室底部處之非噴射器電極8中。倒置SunCell®可藉由由用於單元頂部之噴射器電極噴射的高流量鎵而冷卻。非噴射器電極8可包含凹形空腔以彙集鎵以較好地冷卻電極。在一實施例中,非噴射器電極可充當正電極;然而,相反極性亦為本發明之一實施例。In the inverted embodiment shown in Figure 23, the SunCell® was rotated 180° so that the non-injector electrode was at the bottom of the cell and the injector electrode was at the top of the reaction cell chamber so that the molten metal was ejected along the negative z-axis. At least one of the non-injector electrode and the injector electrode can be mounted in a corresponding plate and can be connected to the reaction cell chamber by a corresponding flange seal. The seal may comprise a gasket comprising a material that does not alloy with gallium, such as Ta, W or ceramic, such as this invention or one known in the art. The reaction unit chamber section at the bottom can act as a reservoir, the previous reservoir can be eliminated, and the EM pump can contain an inlet riser in a new bottom reservoir that can penetrate the bottom floor , is connected to an EM pump tube, and the molten metal stream is provided to the EM pump, wherein the outlet portion of the EM pump tube penetrates the top plate and is connected to a nozzle inside the reaction unit chamber. During operation, the EM pump can pump molten metal from the bottom reservoir and inject it into the non-injector electrode 8 at the bottom of the reaction unit chamber. The inverted SunCell® can be cooled by a high flow of gallium sprayed from the injector electrode on top of the cell. Non-injector electrodes 8 may contain concave cavities to collect gallium for better electrode cooling. In one embodiment, the non-injector electrode may act as the positive electrode; however, reverse polarity is also an embodiment of the present invention.

在一實施例中,電極8可藉由發射輻射而冷卻。為了增大熱傳遞,可增大輻射表面區域。在一實施例中,匯流條10可包含附接之輻射器,諸如輪葉輻射器,諸如平坦板。板可藉由使邊緣的面沿著匯流條10之軸線固定來附接。輪葉可包含漿輪圖案。可藉由來自匯流條10之傳導性熱傳遞來加熱輪葉,該匯流條可藉由點火電流電阻地加熱及藉由低能量氫反應加熱中之至少一者加熱。諸如輪葉之輻射器可包含耐火金屬,諸如Ta、Re或W。In one embodiment, the electrodes 8 may be cooled by emitting radiation. To increase heat transfer, the radiating surface area can be increased. In one embodiment, the bus bar 10 may include attached radiators, such as vane radiators, such as flat plates. The plates can be attached by fixing the faces of the edges along the axis of the bus bar 10 . The vanes may contain a paddle wheel pattern. The vanes can be heated by conductive heat transfer from the bus bar 10, which can be heated by at least one of resistive heating by ignition current and reactive heating by low energy hydrogen. Radiators such as vanes may contain refractory metals such as Ta, Re or W.

在一實施例中,PV窗可包含在PV窗前方之靜電沈降器(ESP)以阻擋諸如Ga2 O之氧化物粒子。ESP可包含具有中心電暈放電電極(諸如中心電線)及在電線處引發諸如電暈放電之放電的高壓電源供應器的管。放電可使可被ESP管之壁吸引且遷移至ESP管之壁的氧化物粒子帶電,在該壁處該等氧化物粒子可經收集及移除中之至少一者。ESP管壁可經高度拋光以將來自反應單元腔室之光反射至PV窗及PV轉換器,諸如聚光PV電池之緻密型接收器陣列。In one embodiment, the window may comprise a PV PV window in front of an electrostatic precipitator (ESP) to block such as the Ga 2 O oxide particles. The ESP may include a tube with a central corona discharge electrode, such as a central wire, and a high voltage power supply at the wire that induces a discharge, such as a corona discharge. The discharge can charge oxide particles that can be attracted to and migrate to the wall of the ESP tube, where they can be at least one of collected and removed. The ESP tube walls can be highly polished to reflect light from the reaction cell chambers to PV windows and PV converters, such as dense receiver arrays of concentrating PV cells.

在一實施例中,PV窗系統包含以下中之至少一者:固定密封窗前方之透明旋轉擋扳,其皆在用於沿著z軸傳播之光的xy平面中;及窗,其可在用於沿著z軸傳播之光的xy平面中旋轉。例示性實施例包含自旋透明圓盤,諸如可包含擋板及窗中之至少一者的清晰視圖螢幕https://en.wikipedia.org/wiki/Clear_view_screen。在一實施例中,SunCell®包含電暈放電系統,該電暈放電系統包含負電極、相對電極及放電電源。在例示性實施例中,負電極可包含可接近PV擋板或諸如自旋窗之窗的銷、針或電線。單元主體可包含相對電極。電暈放電可保持在PV窗附近以使在發電操作期間形成的諸如Ga2 O之粒子及PV擋扳或窗中之至少一者帶負電,使得該等粒子被PV擋扳或窗排斥。In one embodiment, the PV window system includes at least one of: a transparent rotating baffle in front of the stationary sealed window, all in the xy plane for light propagating along the z-axis; and a window, which can be in Rotation in the xy plane for light propagating along the z axis. Exemplary embodiments include spinning transparent discs, such as clear view screens https://en.wikipedia.org/wiki/Clear_view_screen that may include at least one of baffles and windows. In one embodiment, the SunCell® includes a corona discharge system that includes a negative electrode, a counter electrode, and a discharge power source. In an exemplary embodiment, the negative electrode may include pins, needles, or wires that can access a PV baffle or a window such as a spin window. The unit body may include opposing electrodes. Corona discharge may be maintained in the vicinity of the PV window so as Ga 2 O particles and the PV formed during power generation operation of the baffle or the at least one window is negatively charged, so that such particles are baffles or window exclusion PV.

在實施例中,藉由EM泵噴射之熔融金屬流可變得未對準或自軌跡偏離以影響相對電極中心。EM泵可進一步包含感測未對準並變更EM泵電流以重新建立適當流對準且接著可重新建立初始EM泵抽速率的控制器。控制器可包含諸如至少一個熱電偶之感測器以感測未對準,其中所監測之至少一個組件的溫度在未對準發生時增大。在例示性實施例中,控制器控制EM泵電流以使用諸如熱電偶及軟體之感測器保持噴射穩定性。In embodiments, the flow of molten metal injected by the EM pump may become misaligned or deviate from the track to affect the opposite electrode center. The EM pump can further include a controller that senses misalignment and alters the EM pump current to re-establish proper flow alignment and then can re-establish the initial EM pumping rate. The controller may include a sensor, such as at least one thermocouple, to sense misalignment, wherein the temperature of the at least one component being monitored increases as the misalignment occurs. In an exemplary embodiment, the controller controls the EM pump current to maintain spray stability using sensors such as thermocouples and software.

在一實施例中,噴射器噴嘴5q及相對電極8軸向對準以確保熔融金屬流影響相對電極之中心。可實施此項技術中已知之製造方法,諸如雷射對準及其他方法,諸如在插入噴射器泵管5k61之後在噴嘴5q中鑽取孔以達成對準。在另一實施例中,凹形相對電極可藉由在凹腔內包含所噴射熔融金屬來減少未對準之任何不利影響。In one embodiment, the injector nozzle 5q and the opposing electrode 8 are axially aligned to ensure that the molten metal flow affects the center of the opposing electrode. Manufacturing methods known in the art, such as laser alignment and other methods, such as drilling holes in nozzle 5q after insertion of injector pump tube 5k61, may be implemented to achieve alignment. In another embodiment, the concave opposing electrode may reduce any adverse effects of misalignment by containing the sprayed molten metal within the cavity.

保持電漿產生 在實施例中,SunCell®包含真空系統,其包含至真空管線之入口、真空管線、阱及真空泵。真空泵可包含具有高泵抽速度之真空泵,諸如根泵、捲筒或多瓣泵,且可進一步包含用於水蒸汽之阱,其可與真空泵串聯或並聯連接,諸如在真空泵之前串聯連接。在一實施例中,諸如多瓣泵之真空泵或包含不鏽鋼泵抽組件之捲筒或根泵可對鎵合金形成造成之損害具有抗性。水阱可包含吸水材料,諸如固體除濕劑或低溫阱。在一實施例中,泵可包含低溫泵、低溫過濾器或冷卻器中之至少一者以在氣體進入泵之前冷卻該等氣體及冷凝至少一種氣體(諸如水蒸汽)中之至少一者。為了增大泵抽能力及速率,泵抽系統可包含連接至反應單元腔室之複數個真空管線,及連接至真空管線之真空歧管,其中歧管連接至真空泵。在實施例中,至真空管線之入口包含用於阻止反應單元腔室中之熔融金屬粒子進入真空管線之屏蔽件。例示性屏蔽件可包含在入口上方但自入口之表面升高之金屬板或圓頂,以提供用於自反應單元腔室至真空管線中之氣流之選擇性間隙。真空系統可進一步包含諸如一組擋板的對真空管線入口之粒子流量限制器以允許氣體流動而阻擋粒子流動。 Holding Plasma Generation In an embodiment, the SunCell® includes a vacuum system that includes an inlet to a vacuum line, a vacuum line, a trap, and a vacuum pump. The vacuum pump may comprise a vacuum pump with a high pumping speed, such as a root pump, a reel or a multi-lobe pump, and may further comprise a trap for water vapor, which may be connected in series or in parallel with the vacuum pump, such as in series before the vacuum pump. In one embodiment, a vacuum pump such as a multi-lobe pump or a drum or root pump comprising a stainless steel pumping assembly may be resistant to damage caused by gallium alloy formation. Water traps may contain water-absorbing materials, such as solid desiccants or cryogenic traps. In one embodiment, the pump may include at least one of a cryopump, cryogenic filter, or cooler to at least one of cool the gases and condense at least one gas, such as water vapor, before the gases enter the pump. To increase pumping capacity and rate, the pumping system may include a plurality of vacuum lines connected to the reaction unit chambers, and a vacuum manifold connected to the vacuum lines, wherein the manifold is connected to a vacuum pump. In an embodiment, the inlet to the vacuum line includes a shield for preventing molten metal particles in the reaction unit chamber from entering the vacuum line. Exemplary shields may include metal plates or domes above the inlet but raised from the surface of the inlet to provide selective clearance for gas flow from the reaction unit chamber into the vacuum line. The vacuum system may further include a particle flow restrictor to the vacuum line inlet, such as a set of baffles, to allow gas flow and block particle flow.

真空系統可能夠進行超高度真空及將反應單元腔室操作壓力保持在至少一個低範圍中之至少一者,該範圍諸如約0.01托至500托、0.1托至50托、1托至10托及1托至5托。在(i)以痕量水或以與H2 反應以形成HOH之O2 形式供應的具有痕量HOH催化劑之H2 添加及(ii) H2 O添加中之至少一者的情況下,壓力可保持為較低。在諸如氬氣之稀有氣體亦供應至反應混合物的情況下,壓力可保持在諸如約100托至100 atm、500托至10 atm及1 atm至10 atm之至少一個高操作壓力範圍內,其中氬氣可相比於其他反應單元腔室氣體過量。氬氣壓力可增大HOH催化劑及原子H中之至少一者之壽命且可防止在電極處形成之電漿快速分散,從而使得電漿強度增大。The vacuum system may be capable of at least one of performing an ultra-high vacuum and maintaining the reaction unit chamber operating pressure in at least one low range, such as about 0.01 Torr to 500 Torr, 0.1 Torr to 50 Torr, 1 Torr to 10 Torr, and 1 Torr to 5 Torr. HOH H with traces of the catalyst (i) or in traces of water in the reaction with H 2 to form the HOH 2 O 2 was added in the form of supply and (ii) H 2 O added in the case where at least one of the pressure can be kept low. Where a noble gas such as argon is also supplied to the reaction mixture, the pressure can be maintained within at least one high operating pressure range, such as about 100 torr to 100 atm, 500 torr to 10 atm, and 1 atm to 10 atm, where argon The gas may be in excess compared to other reaction unit chamber gases. The argon pressure can increase the lifetime of at least one of the HOH catalyst and atomic H and can prevent rapid dispersion of the plasma formed at the electrodes, resulting in increased plasma strength.

在一實施例中,反應單元腔室包含用以藉由回應於反應單元腔室中之壓力變化而改變體積來將反應單元腔室壓力控制在所要範圍內的構件。構件可包含壓力感測器、機械可擴展區段、擴展及收縮可擴展區段之致動器,及控制藉由可擴展區段之擴展及收縮產生之差分體積的控制器。可擴展區段可包含波紋管。致動器可包含機械、氣動、電磁、壓電、液壓及此項技術中已知的其他致動器。In one embodiment, the reaction unit chamber includes means for controlling the reaction unit chamber pressure within a desired range by changing volume in response to pressure changes in the reaction unit chamber. The components may include pressure sensors, mechanically expandable sections, actuators to expand and contract the expandable sections, and controllers to control the differential volume created by the expansion and contraction of the expandable sections. The expandable section may contain bellows. Actuators may include mechanical, pneumatic, electromagnetic, piezoelectric, hydraulic, and others known in the art.

在一實施例中,SunCell®可包含(i)氣體再循環系統,其具有氣體入口及出口,(ii)氣體分離系統,諸如能夠分離諸如氬氣之稀有氣體、O2 、H2 、H2 O、諸如GaX3 (X = 鹵化物)或Nx Oy (x、y = 整數)之反應混合物之揮發性物種及低能量氫氣體中之至少兩者的混合物之至少兩種氣體的氣體分離系統,(iii)至少一個稀有氣體、O2 、H2 及H2 O分壓感測器,(iv)流量控制器,(v)至少一個噴射器,諸如噴射水之微型噴射器,(vi)至少一個閥,(vii)泵,(viii)廢氣壓力及流量控制器,及(ix)電腦,其用以保持稀有氣體、氬氣、O2 、H2 、H2 O及低能量氫氣體壓力中之至少一者。再循環系統可包含半透膜,其用於允許至少一種氣體(諸如分子低能量氫氣體)自再循環氣體移除。在一實施例中,至少一種氣體(諸如稀有氣體)可經選擇性再循環,而反應混合物之至少一種氣體可自出口流出且可經由排氣裝置排出。稀有氣體可達成以下各者中之至少一者:增大低能量氫反應速率及增大反應單元腔室中之至少一種物種離開排氣裝置之輸送速率。稀有氣體可增大過量水之排出速率以保持所要壓力。稀有氣體可增大低能量氫排出之速率。在一實施例中,稀有氣體(諸如氬氣)可由類稀有氣體替換,該氣體為可容易地自環境大氣獲得及容易地排出至環境大氣中之至少一者。類稀有氣體可與反應混合物具有低反應性。類稀有氣體可自大氣獲取且排出,而非由再循環系統再循環。類稀有氣體可由容易自大氣獲得且可排出至大氣中之氣體形成。稀有氣體可包含可在流入反應單元腔室中之前與氧氣分離之氮氣。替代地,空氣可用作稀有氣體之源,其中氧氣可與來自源之碳反應以形成二氧化碳。氮氣及二氧化碳中之至少一者可充當類稀有氣體。替代地,氧氣可藉由與諸如鎵之熔融金屬反應而移除。所得氧化鎵可在鎵再生系統中再生,該鎵再生系統諸如藉由水性氫氧化鈉與氧化鎵之反應形成五倍子酸鈉且將五倍子酸鈉電解至鎵金屬及排出之氧氣的鎵再生系統。In one embodiment, SunCell® may comprise (i) a gas recirculation system, having a gas inlet and outlet, (ii) a gas separation system capable of separating a rare gas such as argon, O 2, H 2, H 2 O, as volatile species, GaX 3 (X = halide) or N x O y (x, y = integers) of the reaction mixture of low energy and hydrogen mixtures at least two of the at least two gases in gas separation system, (iii) at least one sensor for noble gas, O 2 , H 2 and H 2 O partial pressure, (iv) a flow controller, (v) at least one injector, such as a micro injector for spraying water, (vi) ) at least one valve, (vii) a pump, (viii) the exhaust gas pressure and flow control, and (ix) computer, which is for holding a rare gas, argon, O 2, H 2, H 2 O and a low energy hydrogen at least one of the pressures. The recirculation system may include a semi-permeable membrane for allowing at least one gas, such as molecular low energy hydrogen gas, to be removed from the recirculated gas. In one embodiment, at least one gas, such as a noble gas, may be selectively recycled, while at least one gas of the reaction mixture may flow from an outlet and may be exhausted via an exhaust. The noble gas may achieve at least one of: increasing the low energy hydrogen reaction rate and increasing the delivery rate of at least one species in the reaction unit chamber out of the exhaust. The noble gas increases the rate of removal of excess water to maintain the desired pressure. Noble gases can increase the rate of low energy hydrogen emission. In one embodiment, the noble gas, such as argon, may be replaced by a noble-like gas that is at least one of readily available from the ambient atmosphere and readily exhausted into the ambient atmosphere. Noble-like gases may have low reactivity with the reaction mixture. Noble-like gases can be obtained from the atmosphere and exhausted rather than being recirculated by a recirculation system. Noble-like gases can be formed from gases that are readily available from the atmosphere and can be vented to the atmosphere. The noble gas can include nitrogen that can be separated from oxygen before flowing into the reaction unit chamber. Alternatively, air can be used as a source of noble gases, where oxygen can react with carbon from the source to form carbon dioxide. At least one of nitrogen and carbon dioxide may serve as the noble gas. Alternatively, oxygen can be removed by reaction with molten metal such as gallium. The resulting gallium oxide can be regenerated in a gallium regeneration system such as one that forms sodium gallate by the reaction of aqueous sodium hydroxide and gallium oxide and electrolyzes the sodium gallate to gallium metal and vented oxygen.

在一實施例中,SunCell®可藉由添加反應物H2 、O2 及H2 O中之至少一者而顯著封閉地操作,其中反應單元腔室大氣包含反應物以及稀有氣體,諸如氬氣。稀有氣體可保持在諸如10托至100 atm範圍內之高壓下。大氣可為連續及週期性或間歇地由再循環系統排出或再循環中之至少一者。該排出可移除過量氧氣。添加反應物O2 與H2 可使得O2 為次要物種,且在其與過量H2 一起噴射至反應單元腔室中時基本上形成HOH催化劑。炬可噴射直接反應形成HOH催化劑及過量H2 反應物之H2 及O2 混合物。在一實施例中,可藉由至少一種氫還原、電解還原、熱分解及由於Ga2 O之揮發性的汽化及昇華中之至少一者而至少部分地自氧化鎵釋放過量氧氣。在實施例中,可控制氧庫存中之至少一者,且可至少部分地允許氧庫存藉由在氫存在下使氧間歇地流動至反應單元腔室中來形成HOH催化劑。在一實施例中,氧庫存可藉由與添加之H2 反應而再循環為H2 O。在另一實施例中,過量氧庫存可作為Ga2 O3 移除且藉助於本發明再生,諸如藉由本發明之溢流口及電解系統中之至少一者。過量氧源可為O2 添加及H2 O添加中之至少一者。In one embodiment, SunCell® reactants may be added by H 2, O 2 and H 2 O is at least one of the closed and significant manner, wherein the reaction unit comprises a reaction chamber atmosphere and a rare gas, such as argon . The noble gas can be maintained at high pressures, such as in the range of 10 Torr to 100 atm. The atmosphere may be at least one of continuously and periodically or intermittently exhausted or recirculated by the recirculation system. This venting removes excess oxygen. The addition of the reactants O 2 and H 2 can make O 2 a secondary species and substantially form a HOH catalyst when it is injected into the reaction unit chamber with excess H 2 . Torch may be injected directly react to form a catalyst and excess H 2 HOH reaction of H 2 O 2 and mixtures thereof. In one embodiment, at least one hydrogen may be by reduction, electrolytic reduction, since the thermal decomposition and vaporization of volatile Ga 2 O and at least one sublimation of the gallium oxide and partially released from the at least excess oxygen. In embodiments, at least one of the oxygen inventories can be controlled, and the oxygen inventory can be allowed, at least in part, to form a HOH catalyst by intermittently flowing oxygen into the reaction unit chamber in the presence of hydrogen. In one embodiment, the oxygen can stock by adding the reaction of H 2 and H 2 O. recirculation In another embodiment, the oxygen excess stock as Ga 2 O 3 may be removed and regenerated by means of the present invention, such as by an overflow of the present invention and the electrolytic system and at least one. The source of excess oxygen can be at least one of O 2 addition and H 2 O addition.

在一實施例中,反應單元腔室中之氣體壓力可至少部分地藉由控制泵抽速率及再循環速率中之至少一者來控制。此等速率中之至少一者可受由壓力感測器及控制器控制之閥控制。用以控制氣流之例示性閥為回應於上部及下部目標壓力及可變流量限制閥(諸如由壓力感測器及控制器控制以保持所要氣壓範圍之蝶形及節流閥)而打開及關閉的電磁閥。In one embodiment, the gas pressure in the reaction unit chamber can be controlled at least in part by controlling at least one of a pumping rate and a recirculation rate. At least one of these rates can be controlled by a valve controlled by a pressure sensor and a controller. Exemplary valves used to control airflow open and close in response to upper and lower target pressures and variable flow restriction valves, such as butterfly and throttle valves controlled by pressure sensors and controllers to maintain a desired air pressure range solenoid valve.

在實施例中,SunCell®包含自反應單元腔室5b31排出或移除分子低能量氫氣體之構件。在實施例中,反應單元襯裡及反應單元腔室之壁中之至少一者具有針對諸如H2 (1/4)之分子低能量氫的高滲透率。為了增大滲透率,可最小化壁厚度及最大化壁操作溫度中之至少一者。在實施例中,儲集器5c壁及反應單元腔室5b31壁中之至少一者的厚度可在0.05 mm至5 mm厚範圍內。在實施例中,反應單元腔室壁在至少一個區中相對於另一區較薄以增大分子低能量氫產物自反應單元腔室5b31之擴散或滲透率。在一實施例中,反應單元腔室壁之上部側壁區段(諸如剛好在圖29之套管儲集器凸緣409e下方之上部側壁區段)經薄化。亦可能需要薄化以減少至套管儲集器凸緣409e之熱傳導。相對於其他壁區之薄化程度可在5%至90%之範圍內(例如,薄化區域之橫截面寬度為非薄化區段之橫截面寬度的5%至90%,非薄化區段諸如反應腔室的接近電極8且在該電極下方之下部側壁區段)。In an embodiment, SunCell® includes means for venting or removing molecular low energy hydrogen gas from the reaction cell chamber 5b31. In an embodiment, the cell walls of the reaction chamber of the lining and the reaction of at least one unit having a high permeability such as for H 2 (1/4) of the low-energy hydrogen molecules. To increase permeability, at least one of wall thickness can be minimized and wall operating temperature can be maximized. In an embodiment, the thickness of at least one of the walls of the reservoir 5c and the walls of the reaction unit chamber 5b31 may be in the range of 0.05 mm to 5 mm thick. In an embodiment, the reaction unit chamber walls are thinner in at least one zone relative to another zone to increase the diffusion or permeability of the molecular low energy hydrogen product from the reaction unit chamber 5b31. In one embodiment, the upper sidewall section of the reaction unit chamber wall, such as the upper sidewall section just below the casing reservoir flange 409e of Figure 29, is thinned. Thinning may also be required to reduce heat transfer to the casing reservoir flange 409e. The degree of thinning relative to other wall regions can be in the range of 5% to 90% (for example, the cross-sectional width of the thinned region is 5% to 90% of the cross-sectional width of the non-thinned region, and the section such as the lower sidewall section of the reaction chamber close to and below the electrode 8).

SunCell®可包含溫度感測器、溫度控制器及諸如噴水口之熱交換器,以使反應單元腔室壁可控地保持在所要溫度(諸如300℃至1000℃範圍內)下以提供所要高分子低能量氫滲透率。SunCell® may include temperature sensors, temperature controllers, and heat exchangers such as water jets to controllably maintain the reaction cell chamber walls at a desired temperature, such as in the range of 300°C to 1000°C, to provide the desired high Molecular low energy hydrogen permeability.

可選擇壁及襯裡材料中之至少一者以增大滲透率。在實施例中,反應單元腔室5b31可包含複數種材料,諸如一或多種接觸鎵之材料及藉由諸如本發明之襯裡、塗層或包層之襯裡、塗層或包層與鎵分離的一或多種材料。經分離或經保護材料中之至少一者可包含相對於未分離或未防止鎵接觸之材料具有增大的分子低能量氫滲透率的材料。在例示性實施例中,反應單元腔室材料可包含不鏽鋼(諸如347 SS,諸如4130合金SS或Cr-Mo SS)、鎳、Ti、鈮、釩、鐵、W、Re、Ta、Mo、鈮及Nb (94.33 wt%)-Mo (4.86 wt%)-Zr (0.81 wt%)中之一或多者。諸如SiC之結晶材料可比諸如矽鋁氧氮聚合材料或石英之非晶形材料對低能量氫更具滲透性,使得結晶材料為例示性襯裡。At least one of the wall and liner materials can be selected to increase permeability. In an embodiment, reaction cell chamber 5b31 may contain a plurality of materials, such as one or more materials that contact gallium and are separated from gallium by a liner, coating or cladding such as the lining, coating or cladding of the present invention one or more materials. At least one of the separated or protected materials may comprise a material having an increased molecular low energy hydrogen permeability relative to a material that is not separated or prevented from contacting gallium. In an exemplary embodiment, the reaction cell chamber material may comprise stainless steel (such as 347 SS, such as 4130 alloy SS or Cr-Mo SS), nickel, Ti, niobium, vanadium, iron, W, Re, Ta, Mo, niobium and one or more of Nb (94.33 wt%)-Mo (4.86 wt%)-Zr (0.81 wt%). Crystalline materials such as SiC may be more permeable to low energy hydrogen than amorphous materials such as sialon or quartz, making crystalline materials exemplary liners.

諸如高度可滲透低能量氫之不同反應單元腔室壁可替換SunCell®之反應單元腔室壁(圖29B),其包含較不可滲透之另一金屬,諸如包含347或304 SS。壁區段可為管狀壁區段。替換區段可藉由此項技術中已知之方法(諸如涉及使用不同熱膨脹係數之金屬以匹配接合材料之膨脹速率的方法)熔接、焊接或焊合至SunCell®之其餘部分。在一實施例中,包含耐火金屬(諸如Ta、W、Nb或Mo)之替換區段可藉由黏著劑鍵合至諸如不鏽鋼之不同金屬,該黏著劑諸如藉由Coltronics生產之黏著劑,諸如Resbond或Durabond 954。在一實施例中,不同金屬之間的接頭可包含層壓材料,諸如鍵合金屬之間的陶瓷層壓物,其中每一金屬鍵合至層壓物之一面。陶瓷可包含本發明之陶瓷,諸如BN、石英、氧化鋁、氧化鉿或氧化鋯。例示性接頭為Ta/Durabond 954/BN/Durabond 954/SS。在一實施例中,凸緣409e及底板409a可藉由墊片密封或熔接。A different reaction cell chamber wall, such as highly permeable low energy hydrogen, can replace the reaction cell chamber wall of SunCell® (FIG. 29B), which contains another metal that is less permeable, such as containing 347 or 304 SS. The wall section may be a tubular wall section. The replacement section can be welded, welded, or welded to the remainder of the SunCell® by methods known in the art, such as methods involving the use of metals of different thermal expansion coefficients to match the expansion rates of the joining materials. In one embodiment, the replacement section comprising a refractory metal such as Ta, W, Nb or Mo may be bonded to a dissimilar metal such as stainless steel by an adhesive such as an adhesive produced by Coltronics such as Resbond or Durabond 954. In one embodiment, the joint between dissimilar metals may comprise a laminate, such as a ceramic laminate between bonded metals, where each metal is bonded to one face of the laminate. Ceramics may comprise ceramics of the present invention, such as BN, quartz, alumina, hafnium oxide, or zirconia. An exemplary linker is Ta/Durabond 954/BN/Durabond 954/SS. In one embodiment, the flange 409e and the bottom plate 409a may be gasketed or welded.

在實施例中,包含碳襯裡之反應單元腔室包含具有高熱傳遞能力、較大直徑及能力強大之冷卻系統之壁中的至少一者,其中熱傳遞能力、較大直徑及冷卻系統足以將碳襯裡之溫度保持為低於其將與低能量氫反應混合物中之至少一個組分(諸如水或氫)反應的溫度。例示性熱傳遞能力可在約10 W/cm2 至10 kW/cm2 壁面積範圍內;例示性直徑可在約2 cm至100 cm範圍內,例示性冷卻系統為外部水浴;例示性所要襯裡溫度可為約低於700℃至750℃。反應單元腔室壁可進一步對分子低能量氫具有高度可滲透性。襯裡可與壁接觸以改良自襯裡至冷卻系統之熱傳遞來保持所要溫度。In an embodiment, the reaction unit chamber comprising the carbon lining comprises at least one of a wall having a high heat transfer capacity, a larger diameter and a powerful cooling system, wherein the heat transfer capacity, the larger diameter and the cooling system are sufficient to displace the carbon The temperature of the liner is maintained below the temperature at which it will react with at least one component of the low energy hydrogen reaction mixture, such as water or hydrogen. Exemplary heat transfer capacity can range from about 10 W / cm 2 to 10 kW / cm area range of the second wall; exemplary diameter may be in the range of about 2 cm & lt to 100 cm range, exemplary cooling system external water bath; exemplary desired liner The temperature may be below about 700°C to 750°C. The reaction cell chamber walls can further be highly permeable to molecular low energy hydrogen. The liner can be in contact with the wall to improve heat transfer from the liner to the cooling system to maintain the desired temperature.

在實施例中,SunCell®包含襯裡與至少一個反應單元腔室壁之間的間隙及真空泵,其中該間隙包含藉由真空泵抽空以移除分子低能量氫之腔室。襯裡可為多孔的。在例示性實施例中,襯裡包含多孔陶瓷,諸如多孔BN、經SiC塗佈碳或石英以增大滲透率。在實施例中,SunCell®可包含絕緣體。絕緣體可對低能量氫具有高度滲透性。在另一實施例中,SunCell®包含分子低能量氫集氣劑,諸如在反應單元腔室內部及外部的至少一個鐵奈米粒子,其中集氣劑結合分子低能量氫以將其自反應單元腔室移除。在實施例中,分子低能量氫氣體可自反應單元腔室抽出。反應混合物氣體(諸如包含H2 O及氫氣之氣體)或本發明中之另一者可包含諸如稀有氣體之沖洗氣體,以藉由抽空輔助移除分子低能量氫氣體。沖洗氣體可經排出至大氣或藉由本發明之再循環器循環。In an embodiment, the SunCell® includes a gap between the liner and at least one reaction cell chamber wall and a vacuum pump, wherein the gap includes a chamber evacuated by the vacuum pump to remove molecular low energy hydrogen. The liner can be porous. In an exemplary embodiment, the liner comprises a porous ceramic, such as porous BN, SiC-coated carbon, or quartz to increase permeability. In an embodiment, SunCell® may contain an insulator. Insulators can be highly permeable to low energy hydrogen. In another embodiment, SunCell® comprises a molecular low energy hydrogen gas getter, such as at least one iron nanoparticle inside and outside the reaction cell chamber, wherein the gas getter binds molecular low energy hydrogen to self-react Chamber removed. In an embodiment, molecular low energy hydrogen gas may be drawn from the reaction cell chamber. The reaction gas mixture (such as a gas comprising hydrogen gas and the H 2 O) or the other of the present invention may contain a purge gas such as rare gases, in order to assist in the removal by evacuation of low energy hydrogen molecules. The flushing gas can be vented to the atmosphere or circulated through the recirculator of the present invention.

在一實施例中,襯裡可包含氫解離劑,諸如鈮。襯裡可包含複數種材料,諸如在反應單元腔室之最熱區中抵抗鎵合金形成的材料,及諸如在低於另一材料之鎵合金形成溫度的溫度下操作的至少一個區中之氫解離劑的另一材料。In one embodiment, the liner may contain a hydrogen dissociation agent, such as niobium. The liner may comprise a plurality of materials, such as a material that resists gallium alloy formation in the hottest zone of the reaction cell chamber, and hydrogen dissociation in at least one zone, such as operating at a temperature lower than the gallium alloy formation temperature of another material Another material for the agent.

在一實施例中,由於Ga2 O之揮發性,諸如Ga2 O之氧化鎵可藉由汽化及昇華中之至少一者自反應單元腔室移除。移除可藉由使氣體流過反應單元腔室及保持諸如低於大氣壓之低壓的至少一種方法來達成。氣流可藉由本發明之再循環器來保持。低壓可藉由本發明之真空泵抽系統來保持。氧化鎵可在本發明之冷凝器中冷凝且傳回至反應單元腔室。替代地,氧化鎵可經捕集在過濾器或阱,諸如可藉由本發明之系統及方法自其移除且再生氧化鎵之低溫阱中。阱可在再循環器之至少一個氣體管線中。在一實施例中,Ga2 O可經捕集於真空系統之阱中,其中阱可包含過濾器、低溫阱及靜電沈降器中之至少一者。靜電沈降器可包含高壓電極來保持電漿以靜電充電Ga2 O粒子且捕集帶電粒子。在例示性實施例中,至少一組電極中之每一組可包含可產生對Ga2 O粒子進行負靜電充電之電暈放電的電線,及帶正電收集電極,諸如自來自反應單元腔室之氣流沈降帶電粒子的板或管電極。可藉由此項技術中已知之手段,諸如以機械方式自每一收集器電極移除Ga2 O粒子,且可將Ga2 O轉換成鎵並再循環。鎵可藉由系統及方法,諸如藉由NaOH溶液中之電解而自Ga2 O再生。In one embodiment, since the Ga 2 O of volatile, such as gallium oxide Ga 2 O of the unit can be removed from the reaction by vaporizing chamber and at least one of sublimation. Removal can be accomplished by at least one method of flowing gas through the reaction cell chamber and maintaining a low pressure, such as sub-atmospheric pressure. The gas flow can be maintained by the recirculator of the present invention. Low pressure can be maintained by the vacuum pumping system of the present invention. Gallium oxide can be condensed in the condenser of the present invention and transferred back to the reaction unit chamber. Alternatively, gallium oxide can be trapped in a filter or trap, such as a cryogenic trap from which gallium oxide can be removed and regenerated by the systems and methods of the present invention. The trap may be in at least one gas line of the recirculator. In one embodiment, Ga 2 O may be in the trap by the vacuum system in which the well may comprise a filter, electrostatic precipitator, and the cryogenic trap in the at least one. Electrostatic precipitator comprising a high voltage electrode may be held electrostatically charged plasma Ga 2 O particles and collecting the charged particles. In the exemplary embodiment, each set of at least one set of electrodes may comprise a Ga 2 O to produce particles are negatively electrostatically charging wire of the corona discharge, and positively charged collector electrode, such as a unit from the reaction chamber from the A plate or tube electrode where charged particles are deposited by the air flow. This may be by means known in the art, such as mechanically removed from each collector electrode Ga 2 O particles, and may be converted into gallium Ga 2 O and recycled. Gallium may be by methods and systems, such as the NaOH solution by the electrolysis from the Ga 2 O regeneration.

靜電沈降器(ESP)可進一步包含用於自來自反應單元腔室之氣流沈降至少一種所需物種且將其傳回至反應單元腔室的構件。沈降器可包含輸送構件,諸如歐傑、傳送帶、氣動、機電或本發明或此項技術中已知之其他輸送構件以將藉由沈降器收集之粒子輸送回至反應單元腔室。沈降器可安裝於真空管線之一部分中,真空管線包含藉由重力流將所需粒子傳回至反應單元腔室之回流器,其中粒子可沈降且藉由重力流(諸如真空管線中之流)流回至反應單元腔室。真空管線可在允許所需粒子經歷重力回流之至少一部分中豎直定向。The electrostatic precipitator (ESP) may further comprise means for precipitating at least one desired species from the gas stream from the reaction unit chamber and returning it to the reaction unit chamber. The settler may include conveying means, such as Oji, conveyor belts, pneumatic, electromechanical or other conveying means of the present invention or known in the art to convey the particles collected by the settler back to the reaction unit chamber. A settler can be installed in a portion of a vacuum line containing a refluxer that returns the desired particles to the reaction unit chamber by gravity flow, where the particles can settle and by gravity flow (such as flow in the vacuum line) Flow back to the reaction unit chamber. The vacuum line can be oriented vertically in at least a portion that allows the desired particles to undergo gravitational backflow.

在例示性測試實施例中,反應單元腔室在4 ml/min H2 O噴射下保持在約1至2 atm之壓力範圍下。DC電壓為約30 V且DC電流為約1.5 kA。反應單元腔室為6吋直徑之不鏽鋼球體,諸如圖23中所示之包含3.6 kg熔融鎵的不鏽鋼球體。電極包含DC EM泵之1吋浸沒式SS噴嘴及包含4 cm直徑、1 cm厚W圓盤之相對電極,該圓盤具有由BN底座覆蓋之1 cm直徑引線。EM泵速率為約30至40 ml/s。鎵藉由浸沒噴嘴極化為正,且W底座電極極化為負。鎵藉由EM泵噴射器充分混合。SunCell®輸出功率為約85 kW,使用鎵及SS反應器之質量、比熱及溫度升高之乘積量測。In an exemplary embodiment, the test, the reaction cell chamber pressure is maintained at about the range of 1 to 2 atm at 4 ml / min H 2 O injection. The DC voltage is about 30 V and the DC current is about 1.5 kA. The reaction cell chamber is a 6 inch diameter stainless steel sphere, such as the stainless steel sphere shown in Figure 23 containing 3.6 kg of molten gallium. The electrodes consisted of a 1 inch submerged SS nozzle of a DC EM pump and an opposing electrode consisting of a 4 cm diameter, 1 cm thick W disk with a 1 cm diameter lead covered by a BN base. The EM pump rate is about 30 to 40 ml/s. Gallium is polarized positively by the immersion nozzle, and the W base electrode is polarized negatively. Gallium is thoroughly mixed by EM pump injector. The SunCell® output is approximately 85 kW, measured using the product of the mass, specific heat and temperature rise of the gallium and SS reactors.

在另一測試實施例中,2500 sccm H2 及25 sccm O2 流過約2g之 10% Pt/Al2 O3 珠粒,該等珠粒保持在與H2 及O2 氣體入口及反應單元腔室一致的外部腔室中。另外,使氬氣以保持50托腔室壓力之速率流動至反應單元腔室中同時施加主動真空泵抽。DC電壓為約20 V且DC電流為約1.25 kA。SunCell®輸出功率為約120 kW,使用鎵及SS反應器之質量、比熱及溫度升高之乘積量測。Embodiment, 2500 sccm H 2 and 25 sccm O 2 flow through about 2g of 10% Pt / Al 2 O 3 In another test embodiment beads, such beads are maintained at a H 2 O 2 and a gas inlet and a reaction unit The chamber is consistent with the outer chamber. Additionally, argon was flowed into the reaction cell chamber at a rate that maintained a chamber pressure of 50 Torr while active vacuum pumping was applied. The DC voltage is about 20 V and the DC current is about 1.25 kA. The SunCell® output is approximately 120 kW, measured using the product of the mass, specific heat and temperature rise of the gallium and SS reactors.

在一實施例中,能夠在大氣壓力下、以大氣壓力及高於大氣壓力中之一或多者下操作的再循環系統或再循環器(諸如稀有氣體再循環系統)可包含(i)氣體移動器,諸如真空泵、壓縮機及鼓風機中之至少一者,以使至少一個氣體自反應單元腔室再循環;(ii)再循環氣體管線;(iii)分離系統,用以移除廢氣,諸如低能量氫及氧氣;及(iv)反應物供應系統。在一實施例中,氣體移動器能夠自反應單元腔室泵抽氣體,從而推動氣體通過分離系統以移除廢氣,且將再生氣體傳回至反應單元腔室。氣體移動器可包含泵、壓縮機及鼓風機中之至少兩者作為同一單元。在一實施例中,泵、壓縮機、鼓風機或其組合可包含低溫泵、低溫過濾器或冷卻器中之至少一者,以進行以下操作中之至少一者:在氣體進入氣體移動器之前冷卻氣體及冷凝諸如水蒸汽之至少一種氣體。再循環氣體管線可包含自真空泵至氣體移動器之管線、用以移除廢氣的自氣體移動器至分離系統之管線,及自分離系統移除廢氣至可與反應物供應系統連接的反應單元腔室之管線。例示性反應物供應系統包含與至反應單元腔室之管線的至少一個接頭,該反應單元腔室具有用於諸如氬氣之稀有氣體、氧氣、氫氣及水中之至少一者的至少一個反應混合物氣體補給管線。添加反應物O2 與H2 可使得O2 為次要物種,且在其與過量H2 一起噴射至反應單元腔室中時基本上形成HOH催化劑。炬可噴射直接反應形成HOH催化劑及過量H2 反應物之H2 及O2 混合物。反應物供應系統可包含連接至反應混合物氣體供應管線的氣體歧管及至反應單元腔室之流出管線。In one embodiment, a recirculation system or recirculator (such as a noble gas recirculation system) capable of operating at one or more of atmospheric pressure, atmospheric pressure, and above atmospheric pressure may comprise (i) a gas a mover, such as at least one of a vacuum pump, a compressor, and a blower to recycle at least one gas from the reaction unit chamber; (ii) a recycle gas line; (iii) a separation system to remove waste gas such as low energy hydrogen and oxygen; and (iv) a reactant supply system. In one embodiment, the gas mover is capable of pumping gas from the reaction unit chamber, pushing the gas through the separation system to remove off-gas, and returning regeneration gas to the reaction unit chamber. The gas mover may include at least two of a pump, a compressor and a blower as the same unit. In one embodiment, the pump, compressor, blower, or combination thereof may include at least one of a cryopump, cryogenic filter, or cooler to perform at least one of the following operations: cooling the gas before entering the gas mover gas and condensate at least one gas such as water vapor. The recycle gas line may include a line from the vacuum pump to the gas mover, a line from the gas mover to the separation system for removing waste gas, and removing waste gas from the separation system to a reaction unit chamber that can be connected to the reactant supply system Room piping. An exemplary reactant supply system includes at least one connection to a line to a reaction unit chamber having at least one reaction mixture gas for at least one of a noble gas such as argon, oxygen, hydrogen, and water Supply line. The addition of the reactants O 2 and H 2 can make O 2 a secondary species and substantially form a HOH catalyst when it is injected into the reaction unit chamber with excess H 2 . Torch may be injected directly react to form a catalyst and excess H 2 HOH reaction of H 2 O 2 and mixtures thereof. The reactant supply system may include a gas manifold connected to the reaction mixture gas supply line and an outflow line to the reaction unit chamber.

移除廢氣之分離系統可包含低溫過濾器或低溫阱。用以自再循環氣體移除低能量氫產物氣體之分離系統可包含半透膜,其用以藉由跨越膜自再循環氣體至大氣或至排氣腔室或流之擴散而選擇性地排出低能量氫。再循環器之分離系統可包含自再循環氣體移除氧氣之氧氣洗滌器系統。洗滌器系統可包含容器及容器中的與氧氣反應之集氣劑或吸收劑中的至少一者,該容器諸如金屬,諸如鹼金屬、鹼土金屬或鐵。替代地,吸收劑(諸如活性炭或此項技術中已知之另一氧氣吸收劑)可吸收氧氣。木炭吸收劑可包含可密封於透氣濾筒(諸如可商購之透氣濾筒)中之木炭過濾器。濾筒可為可移除式。洗滌器系統之氧氣吸收劑可藉由此項技術中已知之方法週期性地替換或再生。再循環系統之洗滌器再生系統可包含一或多個吸收劑加熱器及一或多個真空泵中之至少一者。在例示性實施例中,木炭吸收劑由加熱器加熱及經受由真空泵施加之真空中之至少一者以釋放排出或收集之氧氣,且再使用所得再生木炭。來自SunCell®之熱量可用於再生吸收劑。在一實施例中,SunCell®包含至少一個熱交換器、冷卻劑泵及冷卻劑流動迴路,其充當用以再生諸如木炭之吸收劑的洗滌器加熱器。洗滌器可包含較大體積及區域以有效地進行洗滌同時並不顯著增大氣流阻力。該流可藉由連接至再循環管線之氣體移動器保持。可冷卻木炭以更有效地吸收待自再循環氣體,諸如包含諸如氬氣之稀有氣體之混合物洗滌之物種。諸如木炭之氧氣吸收劑亦可洗滌或吸收低能量氫氣體。分離系統可包含複數個洗滌器系統,其各自包含(i)能夠保持氣體密封之腔室;(ii)用以移除諸如氧氣之廢氣之吸收劑;(iii)可將腔室與再循環氣體管線隔離且將再循環氣體管線與腔室隔離之入口閥及出口閥;(iv)藉由控制器控制以自再循環管線連接及斷開腔室之構件,諸如機器人機構;(v)用以使吸收劑再生之構件,諸如加熱器及真空泵,其中加熱器及真空泵可在其再生期間共同用於使至少一個其他洗滌器系統再生;(v)控制器,其用以在第n+1洗滌器系統充當主動洗滌器系統時控制第n洗滌器系統之斷開連接、第n+1洗滌器系統之連接及第n洗滌器系統之再生,其中複數個洗滌器系統中之至少一者可在至少另一者可主動地洗滌或吸收所需氣體時經再生。洗滌器系統可允許SunCell®在封閉排氣條件以及週期性受控排氣或氣體回收下操作。在例示性實施例中,可藉由加熱至不同溫度而自諸如活性碳之吸收劑單獨地收集氫氣及氧氣,在該等溫度下對應氣體大約單獨地釋放。Separation systems to remove exhaust gases may include cryogenic filters or cryogenic traps. Separation systems to remove low energy hydrogen product gas from recycle gas can include semipermeable membranes for selective exhaust by diffusion across the membrane from recycle gas to atmosphere or to an exhaust chamber or stream Low energy hydrogen. The separation system of the recycler may include an oxygen scrubber system that removes oxygen from the recycle gas. The scrubber system may include a vessel, such as a metal, such as an alkali metal, alkaline earth metal, or iron, and at least one of a getter or absorbent that reacts with oxygen in the vessel. Alternatively, an absorbent, such as activated carbon or another oxygen absorbent known in the art, can absorb oxygen. The charcoal absorbent can comprise a charcoal filter that can be sealed in a breathable filter cartridge, such as a commercially available breathable filter cartridge. The filter cartridge may be removable. The oxygen absorber of the scrubber system can be periodically replaced or regenerated by methods known in the art. The scrubber regeneration system of the recirculation system may include at least one of one or more absorbent heaters and one or more vacuum pumps. In an exemplary embodiment, the charcoal absorbent is heated by a heater and subjected to at least one of a vacuum applied by a vacuum pump to release vented or trapped oxygen, and the resulting regenerated charcoal is reused. Heat from SunCell® can be used to regenerate the absorbent. In one embodiment, the SunCell® includes at least one heat exchanger, a coolant pump, and a coolant flow loop that acts as a scrubber heater to regenerate an absorbent such as charcoal. The scrubber can contain larger volumes and areas to efficiently scrub without significantly increasing airflow resistance. This flow can be maintained by a gas mover connected to the recycle line. The charcoal can be cooled to more efficiently absorb species to be scrubbed from recycled gases, such as mixtures containing noble gases such as argon. Oxygen absorbers such as charcoal can also scrub or absorb low energy hydrogen gas. The separation system may comprise a plurality of scrubber systems, each comprising (i) a chamber capable of maintaining a gas seal; (ii) an absorbent to remove waste gases such as oxygen; (iii) a chamber that can be combined with the recirculating gas Inlet and outlet valves for line isolation and isolating the recirculation gas line from the chamber; (iv) means controlled by a controller to connect and disconnect the chamber from the recirculation line, such as a robotic mechanism; (v) for Means for regenerating the absorbent, such as heaters and vacuum pumps, wherein the heaters and vacuum pumps may be used together during their regeneration to regenerate at least one other scrubber system; (v) a controller for scrubbing at the n+1th Controls the disconnection of the nth scrubber system, the connection of the n+1th scrubber system, and the regeneration of the nth scrubber system when the scrubber system is functioning as an active scrubber system, wherein at least one of the plurality of scrubber systems can be At least the other can be actively scrubbed or regenerated while absorbing the desired gas. The scrubber system allows SunCell® to operate under closed exhaust conditions and periodic controlled exhaust or gas recovery. In an exemplary embodiment, hydrogen and oxygen may be separately collected from an absorbent such as activated carbon by heating to different temperatures at which the corresponding gases are released approximately separately.

在包含稀有氣體、氫氣及氧氣之反應單元腔室氣體混合物之實施例中,其中反應單元腔室氣體之稀有氣體之分壓超出氫氣分壓,由於諸如氬氣之稀有氣體之反應物濃度稀釋效應,可增大氧氣分壓以補償氫氣與氧氣之間的降低之反應速率,以形成HOH催化劑。在實施例中,HOH催化劑可在與諸如氬氣之稀有氣體組合之前形成。可藉由諸如再結合器催化劑、電漿源或諸如長絲之熱表面的再結合器或燃燒器而引起氫氣及氧氣發生反應。再結合器催化劑可包含支撐在陶瓷支撐件上之貴金屬,諸如氧化鋁、氧化鋯、氧化鉿、二氧化矽或沸石粉末或珠粒上之Pt、Pd或Ir;本發明之另一經支撐再結合器催化劑;或解離劑,諸如阮尼Ni、Ni、鈮、鈦或本發明之其他解離劑金屬;或此項技術中已知的呈提供高表面積之形式,諸如粉末、墊、織物或織布的材料。例示性再結合器包含Al2 O3 珠粒上之10 wt% Pt。電漿源可包含輝光放電、微波電漿、電漿炬、電感或電容耦合式RF放電、介電障壁放電、壓電直接放電、聲學放電或本發明或此項技術中已知之另一放電單元。熱絲可包含熱鎢絲、Pt長絲上之Pt或Pd黑或此項技術中已知的另一催化性長絲。In the embodiment of the reaction cell chamber gas mixture comprising noble gas, hydrogen, and oxygen, where the partial pressure of the noble gas of the reaction cell chamber gas exceeds the hydrogen partial pressure due to the dilution effect of the reactant concentration of the noble gas such as argon , the oxygen partial pressure can be increased to compensate for the reduced reaction rate between hydrogen and oxygen to form the HOH catalyst. In embodiments, the HOH catalyst may be formed prior to combining with a noble gas such as argon. The hydrogen and oxygen can be caused to react by a recombiner or burner such as a recombiner catalyst, a plasma source, or a hot surface such as a filament. The recombiner catalyst may comprise a precious metal such as alumina, zirconia, hafnium oxide, silica or Pt, Pd or Ir on zeolite powder or beads supported on a ceramic support; another supported recombination of the present invention or dissociator, such as Raney Ni, Ni, niobium, titanium, or other dissociator metal of the present invention; or known in the art in a form that provides a high surface area, such as powder, mat, fabric, or woven cloth s material. Recombination exemplary embodiment shown comprises the Al 10 wt% Pt of beads 2 O 3. The plasma source may comprise a glow discharge, microwave plasma, plasma torch, inductively or capacitively coupled RF discharge, dielectric barrier discharge, piezoelectric direct discharge, acoustic discharge, or another discharge cell of the present invention or known in the art . The hot filaments may comprise hot tungsten filaments, Pt or Pd black on Pt filaments, or another catalytic filament known in the art.

諸如水、氫氣、氧氣及稀有氣體中之至少一者的反應混合物物種之入口流可為連續的或間歇的。可控制入口流動速率及排出或真空流動速率以達成所要壓力範圍。入口流可為間歇的,其中該流可在所需範圍之最大壓力下停止且在所需範圍之最小值下開始。在反應混合物氣體包含諸如氬氣之高壓稀有氣體的情況下,反應單元腔室可經抽空,填充有反應混合物,且在大約靜態排氣流動條件下運行,其中諸如水、氫氣及氧氣中之至少一者的反應物之入口流在連續或間歇流動條件下保持以保持壓力在所需範圍內。另外,稀有氣體可以經濟上實用之流速與對應排氣泵抽速率流動,或稀有氣體可藉由再循環系統或再循環器再生或洗滌及再循環。在一實施例中,可藉由葉輪或藉由噴氣口迫使反應混合物氣體進入單元中以增大穿過單元之反應物流動速率,同時將反應單元壓力保持在所要範圍內。The inlet flow of reaction mixture species, such as at least one of water, hydrogen, oxygen, and noble gases, may be continuous or intermittent. The inlet flow rate and the exhaust or vacuum flow rate can be controlled to achieve the desired pressure range. The inlet flow can be intermittent, wherein the flow can be stopped at the maximum pressure of the desired range and started at the minimum of the desired range. Where the reaction mixture gas comprises a high pressure noble gas such as argon, the reaction cell chamber can be evacuated, filled with the reaction mixture, and operated under approximately static exhaust flow conditions with at least one of water, hydrogen and oxygen The inlet flow of the reactants for one is maintained under continuous or intermittent flow conditions to maintain the pressure within the desired range. Additionally, the noble gas may flow at an economically practical flow rate and corresponding exhaust pumping rate, or the noble gas may be regenerated or scrubbed and recirculated by a recirculation system or recirculator. In one embodiment, the reaction mixture gas can be forced into the cell by an impeller or by a gas jet to increase the flow rate of the reactants through the cell while maintaining the reaction cell pressure within a desired range.

反應單元腔室5b31氣體可包含H2 、諸如氬氣之稀有氣體、O2 及H2 O以及諸如CO2 之氧化物中之至少一者。在實施例中,反應單元腔室5b31中之壓力可低於大氣壓。壓力可在約1毫托至750托、10毫托至100托、100毫托至10托及250毫托至1托的至少一個範圍內。SunCell®可包含水蒸汽供應系統,其包含具有加熱器及溫度控制器之水儲集器、通道或導管及閥。在實施例中,反應單元腔室氣體可包含H2 O蒸汽。可藉由外部水儲集器結合反應單元腔室藉由控制水儲集器之溫度來經由通道供應水蒸汽,其中水儲集器可為水蒸汽供應系統之最冷組件。水儲集器之溫度可基於水之隨溫度而變的分壓而控制水蒸汽壓。水儲集器可進一步包含冷卻器以降低蒸汽壓。水可包含諸如溶解化合物之添加劑,諸如鹽,諸如NaCl或其他鹼或鹼土鹵化物;吸收劑,諸如沸石;形成水合物之材料或化合物;或熟習此項技術者已知的降低蒸汽壓之另一材料或化合物。降低蒸汽壓的例示性機制為藉由依數效應或鍵合相互作用。在實施例中,水蒸汽壓力源可包含可容納於儲集器中且經由導管供應至反應單元腔室5b31的冰。冰可具有高表面積以增大自冰形成HOH催化劑及H之速率及低能量氫反應速率中之至少一者。冰可呈精細碎片形式以增大表面積。冰可保持在低於0℃之所需溫度下以控制水蒸汽壓。諸如H2 及氬氣中之至少一者的運載氣體可流過冰儲集器且流入反應單元腔室中。水蒸汽壓力亦可藉由控制運載氣體流動速率來控制。The reaction unit chamber 5b31 gas may include at least one of H 2 , noble gases such as argon, O 2 and H 2 O, and oxides such as CO 2 . In an embodiment, the pressure in the reaction unit chamber 5b31 may be lower than atmospheric pressure. The pressure may be in a range of at least one of about 1 mTorr to 750 Torr, 10 mTorr to 100 Torr, 100 mTorr to 10 Torr, and 250 mTorr to 1 Torr. SunCell® may include a water vapor supply system comprising a water reservoir with heater and temperature controller, channels or conduits and valves. In an embodiment, the reaction gas chamber means may comprise a H 2 O vapor. Water vapor can be supplied through the channel by controlling the temperature of the water reservoir, which may be the coldest component of the water vapor supply system, by combining an external water reservoir with the reaction unit chamber. The temperature of the water reservoir can control the water vapor pressure based on the partial pressure of the water as a function of temperature. The water reservoir may further include a cooler to reduce vapor pressure. The water may contain additives such as dissolved compounds, such as salts, such as NaCl or other alkali or alkaline earth halides; absorbents, such as zeolites; hydrate-forming materials or compounds; or other vapor pressure reducing agents known to those skilled in the art. A material or compound. Exemplary mechanisms for lowering the vapor pressure are through colligative effects or bonding interactions. In an embodiment, the water vapor pressure source may comprise ice that may be contained in a reservoir and supplied to the reaction unit chamber 5b31 via a conduit. The ice may have a high surface area to increase at least one of the rate of HOH catalyst and H formation from the ice and the rate of the low energy hydrogen reaction. The ice can be in the form of fine fragments to increase the surface area. Ice can be kept at the desired temperature below 0°C to control the water vapor pressure. Such as at least one carrier gas may flow through the reservoir of ice H 2 and argon and flows into the reaction chamber means. Water vapor pressure can also be controlled by controlling the carrier gas flow rate.

液體H2 O中H2 之等效莫耳濃度為55莫耳/公升,其中H2 氣體在STP下占22.4升。在一實施例中,將H2 作為反應物供應至反應單元腔室5b31以形成呈包含液態水及蒸汽中之至少一者之形式的低能量氫。SunCell®可包含至少一個液態水及蒸汽中之至少一者的噴射器。噴射器可包含水及蒸汽噴口中之至少一者。反應單元腔室中之噴射器孔口可較小以阻止回流。噴射器可包含抗氧化劑、諸如陶瓷之耐火材料或本發明之另一材料。SunCell®可包含水及蒸汽中之至少一者之源以及壓力及流量控制系統。在一實施例中,SunCell®可進一步包含音波處理器、霧化器、氣霧器或噴霧器以產生小型水滴,其可夾帶在載氣流中且流動至反應單元腔室中。音波處理器可包含振動器及壓電裝置中之至少一者。載氣流中水之蒸汽壓可藉由控制水蒸汽源之溫度或自源至反應單元腔室之流動導管的溫度來控制。在一實施例中,SunCell®可進一步包含氫源及諸如CuO再結合器之氫再結合器,以藉由使氫流過諸如經加熱銅氧化物再結合器之再結合器向反應單元腔室5b31添加水,使得所產生之水蒸汽流入反應單元腔室中。在另一實施例中,SunCell®可進一步包含蒸汽噴射器。蒸汽噴射器可包含控制閥及控制器中之至少一者,以控制蒸汽及單元氣體中之至少一者至蒸汽噴射器、至聚合噴嘴之氣體入口、聚合-分岔噴嘴、可與水源及溢流出口連接之組合錐體、水源、溢流出口、傳送錐體及止回閥中之流動。控制閥可包含可藉由計時器、諸如單元壓力或水感測器之感測器或手動激活器控制的電子螺線管或其他電腦控制閥。在一實施例中,SunCell®可進一步包含噴射水之泵。水可經由窄橫截面導管(諸如細的皮下注射針)傳送,使得來自SunCell®之熱量不會使泵中之水沸騰。泵可包含注射泵、蠕動泵、計量泵或此項技術中已知之其他泵。注射泵可包含複數個注射器,使得在另一者噴射時可再填充至少一者。注射泵可由於導管相對於注射器之柱塞的小得多之橫截面而放大導管中水之力。導管可為散熱及冷卻中之至少一者,以防止泵中之水沸騰。Liquid H in H 2 O 2 equivalent molar concentration of 55 mole / liter, wherein the H 2 gas is 22.4 liters at STP. In one embodiment, the H 2 supplied as reactant to the reaction chamber 5b31 unit to form a low energy hydrogen form of liquid water and steam contained in the at least one of the. SunCell® can include at least one ejector of at least one of liquid water and steam. The eductor may include at least one of water and steam jets. The injector orifices in the reaction unit chambers can be small to prevent backflow. The injector may contain an antioxidant, a refractory material such as ceramic, or another material of the present invention. SunCell® may include a source of at least one of water and steam and a pressure and flow control system. In one embodiment, the SunCell® may further comprise a sonicator, nebulizer, aerosol or nebulizer to generate small water droplets that can be entrained in the carrier gas stream and flow into the reaction unit chamber. The sonic processor may include at least one of a vibrator and a piezoelectric device. The vapor pressure of water in the carrier gas stream can be controlled by controlling the temperature of the water vapor source or the temperature of the flow conduit from the source to the reaction unit chamber. In one embodiment, the SunCell® may further comprise a hydrogen source and a hydrogen recombiner, such as a CuO recombiner, to the reaction unit chamber by flowing hydrogen through a recombiner, such as a heated copper oxide recombiner 5b31 Water is added so that the generated water vapor flows into the reaction unit chamber. In another embodiment, the SunCell® may further comprise a steam ejector. The steam injector may include at least one of a control valve and a controller to control at least one of steam and unit gas to the steam injector, gas inlet to the polymerization nozzle, polymerization-bifurcation nozzle, communication with water source and overflow Flow in the combined cone, water source, overflow outlet, transfer cone and check valve connected by the outflow outlet. Control valves may include electronic solenoids or other computer-controlled valves that may be controlled by timers, sensors such as cell pressure or water sensors, or manual activators. In one embodiment, the SunCell® may further comprise a pump to spray water. Water can be delivered through a narrow cross-section catheter, such as a thin hypodermic needle, so that the heat from the SunCell® does not boil the water in the pump. Pumps may include syringe pumps, peristaltic pumps, metering pumps, or other pumps known in the art. A syringe pump may contain a plurality of syringes so that at least one can be refilled while the other is firing. Syringe pumps can amplify the force of the water in the catheter due to the much smaller cross-section of the catheter relative to the plunger of the syringe. The conduit can be at least one of heat dissipation and cooling to prevent the water in the pump from boiling.

在實施例中,藉由控制反應單元腔室壓力來控制反應單元腔室反應單元混合物,藉由控制反應物之噴射速率及控制反應混合物之過量反應物及產物自反應單元腔室5b31排出之速率的至少一種手段來控制該壓力。在一實施例中,SunCell®包含壓力感測器、真空泵、真空管線、閥控制器,及閥,諸如壓力啟動閥,諸如電磁閥或節流閥,其回應於處理由感測器量測之壓力的控制器而打開及關閉自反應單元腔室至真空泵之真空管線。閥可控制反應單元腔室氣體之壓力。閥可保持關閉直至單元壓力達到第一高設定點為止,接著可啟動該閥以打開閥直至真空泵將壓力下降至第二低設定點為止,該第二低設定點可使得關閉閥之啟動。在一實施例中,控制器可控制至少一個反應參數,諸如反應單元腔室壓力、反應物噴射速率、電壓、電流及熔融金屬噴射速率,以保持非脈衝或約穩定或連續電漿。In an embodiment, the reaction unit chamber mixture is controlled by controlling the reaction unit chamber pressure, by controlling the injection rate of the reactants and by controlling the rate at which excess reactants and products of the reaction mixture are discharged from the reaction unit chamber 5b31 at least one means to control this pressure. In one embodiment, the SunCell® includes a pressure sensor, a vacuum pump, a vacuum line, a valve controller, and a valve, such as a pressure-activated valve, such as a solenoid valve or a throttle valve, which responds to processing the data measured by the sensor. The pressure controller opens and closes the vacuum line from the reaction unit chamber to the vacuum pump. The valve controls the pressure of the reaction cell chamber gas. The valve can remain closed until the cell pressure reaches a first high set point, then the valve can be actuated to open the valve until the vacuum pump drops the pressure to a second low set point, which can cause activation of the closing valve. In one embodiment, the controller may control at least one reaction parameter, such as reaction cell chamber pressure, reactant injection rate, voltage, current, and molten metal injection rate, to maintain a non-pulsed or approximately steady or continuous plasma.

在一實施例中,SunCell®包含壓力感測器、反應混合物之至少一個反應物或物種的源(諸如H2 O、H2 、O2 及諸如氬氣之稀有氣體之源)、反應物管線、閥控制器,及諸如壓力啟動閥之閥,諸如電磁閥或節流閥,其回應於處理藉由感測器量測之壓力的控制器而打開及關閉自反應混合物之至少一個反應物或物種的源至反應單元腔室之反應物管線。閥可控制反應單元腔室氣體之壓力。閥可保持打開直至單元壓力達到第一高設定點為止,接著可啟動該閥以關閉閥直至真空泵將壓力下降至第二低設定點為止,該第二低設定點可使得打開閥之啟動。In one embodiment, SunCell® includes a pressure sensor, or the reaction mixture of at least one reactive source of species (such as H 2 O, H 2, O 2 and argon as a noble gas of the source), a reactant tube Lines, valve controllers, and valves such as pressure activated valves, such as solenoid valves or throttle valves, that open and close at least one reactant from a reactive mixture in response to a controller that handles pressure measured by a sensor Or the source of species to the reactant line of the reaction unit chamber. The valve controls the pressure of the reaction cell chamber gas. The valve can remain open until the cell pressure reaches a first high set point, then the valve can be actuated to close the valve until the vacuum pump drops the pressure to a second low set point, which can enable activation of the open valve.

在一實施例中,SunCell®可包含噴射器,諸如微型泵。微型泵可包含機械或非機械裝置。例示性機械裝置包含可包含致動及微型閥膜及轉板之移動部分。微型泵之驅動力可藉由利用來自壓電效應、靜電效應、熱氣動效應、氣動效應及磁效應之群組的至少一個效應來產生。非機械泵可與以下中之至少一者一起起作用:電流體動力、電滲透、電化學、超音波、毛細管、化學及此項技術中已知之另一流產生機制。微型泵可包含以下各者中之至少一者:壓電、電滲透、隔膜、蠕動、注射及無閥微型泵,以及毛細管及化學供電泵中之至少一者,及此項技術中已知之另一微型泵。諸如微型泵之噴射器可連續供應諸如水之反應物,或其可諸如以脈衝模式間歇地供應反應物。在一實施例中,噴水器包含諸如微型泵之泵、至少一個閥及水儲集器中之至少一者,且可進一步包含冷卻器或延伸導管以將用於反應單元腔室之水儲集器及閥移除充分距離,以避免預噴射水過度加熱或沸騰。In one embodiment, the SunCell® may contain an ejector, such as a micropump. Micropumps may contain mechanical or non-mechanical devices. Exemplary mechanical devices include moving parts that may include actuation and microvalve membranes and rotary plates. The driving force of the micropump can be generated by utilizing at least one effect from the group of piezoelectric effect, electrostatic effect, thermopneumatic effect, pneumatic effect and magnetic effect. Non-mechanical pumps can function with at least one of: electrohydrodynamic, electroosmotic, electrochemical, ultrasonic, capillary, chemical, and another flow generation mechanism known in the art. The micropump may comprise at least one of piezoelectric, electroosmotic, diaphragm, peristaltic, injection, and valveless micropumps, and at least one of capillary and chemically powered pumps, and others known in the art a micropump. An ejector, such as a micropump, may continuously supply the reactant, such as water, or it may supply the reactant intermittently, such as in a pulsed mode. In one embodiment, the water spray includes at least one of a pump such as a micropump, at least one valve, and a water reservoir, and may further include a cooler or extension conduit to store water for the reaction unit chambers The valve and valve are removed a sufficient distance to avoid overheating or boiling of the pre-spray water.

SunCell®可包含噴射控制器及至少一個感測器,諸如記錄壓力、溫度、電漿導電性或其他反應氣體或電漿參數之感測器。噴射序列可由控制器控制,該控制器使用來自至少一個感測器之輸入來傳送所需功率,同時避免由於過度供電而損害SunCell®。在實施例中,SunCell®包含諸如噴水器之複數個噴射器以噴射至反應單元腔室內之不同區中,其中噴射器由控制器啟動以及時交替電漿熱點之位置以避免損害SunCell®。噴射可為間歇的、週期性間歇的、連續的,或包含達成所要功率、增益及效能最佳化之任何其他噴射圖案。SunCell® may include a jet controller and at least one sensor, such as a sensor that records pressure, temperature, plasma conductivity, or other reactive gas or plasma parameters. The spray sequence can be controlled by a controller that uses input from at least one sensor to deliver the required power while avoiding damage to the SunCell® due to overpowering. In an embodiment, the SunCell® includes a plurality of eductors, such as water spargers, to spray into different zones within the reaction cell chamber, wherein the eductors are activated by the controller to alternate the locations of plasma hot spots in time to avoid damage to the SunCell®. The jetting can be intermittent, periodically intermittent, continuous, or include any other jetting pattern that achieves the desired power, gain, and performance optimization.

SunCell®可包含閥,諸如泵入口及出口閥,其回應於泵之噴射及填充而打開及關閉,其中入口及出口閥之打開或關閉狀態可彼此成180°異相。泵可產生高於反應單元腔室壓力之壓力以達成噴射。在泵噴射易於受反應單元腔室壓力影響之情況下,SunCell®可包含在反應單元腔室與儲集器之間的氣體連接,其將水供應至泵以使泵之排出壓力動態匹配反應單元腔室之排出壓力。SunCell® may include valves, such as pump inlet and outlet valves, that open and close in response to pump injection and filling, wherein the open or closed states of the inlet and outlet valves may be 180° out of phase with each other. The pump can generate a pressure higher than the reaction unit chamber pressure to achieve ejection. In situations where pump injection is susceptible to reaction cell chamber pressure, SunCell® may include a gas connection between the reaction cell chamber and the reservoir that supplies water to the pump to dynamically match the pump discharge pressure to the reaction cell The discharge pressure of the chamber.

在其中反應單元腔室壓力低於泵壓力之實施例中,泵可包含至少一個閥以在泵閒置時停止至反應單元腔室之流動。泵可包含至少一個閥。在例示性實施例中,蠕動微型泵包含串聯之至少三個微型閥。此等三個閥依序打開及關閉,以便在稱為蠕動之過程中自入口抽吸流體至出口。在一實施例中,閥可為主動的,諸如電磁或壓電止回閥,或其可被動地起作用,藉此藉由背壓關閉閥,諸如止回閥,諸如球形、回轉、隔膜或鴨嘴形止回閥。In embodiments where the reaction unit chamber pressure is lower than the pump pressure, the pump may include at least one valve to stop flow to the reaction unit chamber when the pump is idle. The pump may contain at least one valve. In an exemplary embodiment, the peristaltic micropump includes at least three microvalves in series. These three valves open and close sequentially to draw fluid from the inlet to the outlet in a process called peristalsis. In one embodiment, the valve may be active, such as a solenoid or piezoelectric check valve, or it may act passively, whereby the valve is closed by back pressure, such as a check valve, such as a ball, swing, diaphragm or Duckbill check valve.

在其中壓力梯度存在於待噴射至反應單元腔室中之水源與反應單元腔室之間的實施例中,泵可包含可週期性地180°異相打開及關閉的兩個閥:儲集器閥及反應單元腔室閥。閥可藉由具有所要噴射體積之泵腔室分離。在反應單元腔室閥關閉的情況下,可打開至水儲集器之儲集器閥以填充泵腔室。在儲集器閥關閉之情況下,反應單元腔室閥可打開以使得將所需體積之水噴射至反應單元腔室中。可藉由壓力梯度驅動進入及離開泵腔室之流。水流動速率可藉由控制泵腔室之體積及同步閥打開及關閉之週期來控制。在一實施例中,微型噴水器可包含兩個閥:至微型腔室或約10ul至15 ul體積之入口及出口閥,其各自以機械方式連結且關於打開及關閉成180°異相。閥可由凸輪以機械方式驅動。In embodiments where a pressure gradient exists between the water source to be injected into the reaction unit chamber and the reaction unit chamber, the pump may comprise two valves that can be periodically opened and closed 180° out of phase: the reservoir valve and the reaction unit chamber valve. The valve can be separated by a pump chamber with the desired spray volume. With the reaction unit chamber valve closed, the reservoir valve to the water reservoir can be opened to fill the pump chamber. With the reservoir valve closed, the reaction unit chamber valve can be opened to allow the desired volume of water to be injected into the reaction unit chamber. The flow into and out of the pump chamber can be driven by a pressure gradient. The water flow rate can be controlled by controlling the volume of the pump chamber and the period of the synchronizing valve opening and closing. In one embodiment, a micro sprinkler may include two valves: an inlet and an outlet valve to the microchamber or volume of about 10 ul to 15 ul, each mechanically linked and 180° out of phase with respect to opening and closing. The valve can be mechanically actuated by a cam.

在另一實施例中,反應單元混合物之另一物種,諸如H2 、O2 、稀有氣體及水中之至少一者可替換水或添加至水。在流入反應單元腔室中之物種為室溫下之氣體的情況下,SunCell®可包含質量流量控制器以控制氣體之輸入流量。In another embodiment, another species of the reaction mixture means, such as H 2, O 2, water, and a rare gas of at least one of water or alternatively may be added to the water. Where the species flowing into the reaction cell chamber is a gas at room temperature, the SunCell® can include a mass flow controller to control the input flow of the gas.

在實施例中,將添加劑添加至反應單元腔室5b31以藉由在熔融金屬中提供H及HOH中之至少一者之源來增大低能量氫反應速率。合適的添加劑可以可逆地形成水合物,其中水合物在約SunCell®操作溫度下形成,且在較高溫度,諸如低能量氫反應電漿內之溫度下釋放。在實施例中,SunCell®操作溫度可在約100℃至3000℃範圍內,且低能量氫反應電漿之對應溫度範圍可比SunCell®之操作溫度高約50℃至2000℃之範圍。在例示性實施例中,可將諸如釩酸鋰或氧化鉍之添加劑添加至熔融金屬,其中添加劑可在電漿中結合水分子且將其釋放,以提供H及HOH催化劑中之至少一者。水源可連續地供應至反應單元腔室,其中水中之至少一些可結合至添加劑。添加劑可藉由將水結合為水合之水而增大低能量氫反應速率且將結合水輸送至電漿中,在電漿中對應添加劑水合物可脫水以向低能量氫反應提供H及HOH催化劑中之至少一者。水源可包含液體及氣態水、氫及氧中之至少一者。SunCell®可包含本發明之噴水器及本發明之氫氧再結合器中之至少一者,諸如負載於諸如氧化鋁之陶瓷上的貴金屬。氫及氧之混合物可供應至再結合器,該再結合器將氫及氧再結合至接著流動至反應單元腔室中之水中。In an embodiment, additives are added to the reaction unit chamber 5b31 to increase the low energy hydrogen reaction rate by providing a source of at least one of H and HOH in the molten metal. Suitable additives can reversibly form hydrates, wherein hydrates are formed at about SunCell® operating temperatures and released at higher temperatures, such as those found in low energy hydrogen reaction plasmas. In an embodiment, the operating temperature of SunCell® may be in the range of about 100°C to 3000°C, and the corresponding temperature range of the low energy hydrogen reactive plasma may be in the range of about 50°C to 2000°C higher than the operating temperature of SunCell®. In an exemplary embodiment, additives such as lithium vanadate or bismuth oxide can be added to the molten metal, where the additives can bind and release water molecules in the plasma to provide at least one of H and HOH catalysts. A source of water may be continuously supplied to the reaction unit chamber, wherein at least some of the water may be bound to additives. Additives can increase the low energy hydrogen reaction rate by binding water into water of hydration and transport the bound water into the plasma where the corresponding additive hydrate can be dehydrated to provide H and HOH catalysts for the low energy hydrogen reaction at least one of them. The water source may include at least one of liquid and gaseous water, hydrogen, and oxygen. The SunCell® may comprise at least one of the water sprinkler of the present invention and the hydrogen-oxygen recombiner of the present invention, such as a precious metal supported on a ceramic such as alumina. The mixture of hydrogen and oxygen can be supplied to a recombiner, which recombines the hydrogen and oxygen into water which then flows into the reaction unit chamber.

在其中壓力梯度存在於待噴射至反應單元腔室中之水源與反應單元腔室之間的另一實施例中,水之入口流可經由流速控制器或限制器連續地供應,該流速控制器或限制器諸如以下各者中之至少一者:(i)針閥;(ii)窄或小ID管;(iii)吸濕性材料,諸如纖維素、棉花、聚乙二醇,或此項技術中已知之另一吸濕性材料;及(iv)半透膜,諸如陶瓷膜、玻璃料或此項技術中已知之另一半透膜。諸如棉花之吸濕性材料可包含包裝,且除了諸如針閥之另一限制器之外,可用以限制流量。SunCell®可包含用於吸濕性材料或半透膜之固持器。可校準流量限制器之流動速率,且真空泵及壓力控制之排氣閥可進一步保持所要動態腔室壓力及水流動速率。在另一實施例中,反應單元混合物之另一物種,諸如H2 、O2 、稀有氣體及水中之至少一者可替換水或添加至水。在流入反應單元腔室中之物種為室溫下之氣體的情況下,SunCell®可包含質量流量控制器以控制氣體之輸入流量。In another embodiment where a pressure gradient exists between the water source to be injected into the reaction unit chamber and the reaction unit chamber, the inlet flow of water may be continuously supplied via a flow rate controller or restrictor, which flow rate controller or a restrictor such as at least one of: (i) a needle valve; (ii) a narrow or small ID tube; (iii) a hygroscopic material such as cellulose, cotton, polyethylene glycol, or the like another hygroscopic material known in the art; and (iv) a semipermeable membrane, such as a ceramic membrane, glass frit, or another semipermeable membrane known in the art. An absorbent material, such as cotton, can contain the packaging and, in addition to another restrictor, such as a needle valve, can be used to restrict flow. SunCell® may contain retainers for hygroscopic materials or semipermeable membranes. The flow rate of the flow restrictor can be calibrated, and the vacuum pump and pressure controlled vent valve can further maintain the desired dynamic chamber pressure and water flow rate. In another embodiment, another species of the reaction mixture means, such as H 2, O 2, water, and a rare gas of at least one of water or alternatively may be added to the water. Where the species flowing into the reaction cell chamber is a gas at room temperature, the SunCell® can include a mass flow controller to control the input flow of the gas.

在一實施例中,在反應單元腔室真空下操作之噴射器可包含流量限制器,諸如針閥或窄管,其中控制長度及直徑以控制水流動速率。例示性小直徑管噴射器包含類似於用於ESI-ToF噴射系統之噴射器,諸如具有約25 um至300 um範圍內之ID的噴射器。流量限制器可與諸如閥或泵的至少一個其他噴射器元件組合。在例示性實施例中,藉由諸如注射泵之泵控制小直徑管之水頭壓力。噴射速率可進一步藉由自管至反應單元腔室之閥來控制。可藉由在水表面上對氣體加壓來施加排出壓力,其中氣體可壓縮且水不可壓縮。可藉由泵施加氣體加壓。噴水速率可藉由管直徑、長度、排出壓力及閥打開及關閉頻率以及工作循環中之至少一者來控制。管直徑可在約10 um至10 mm範圍內,長度可在約1 cm至1 m範圍內,排出壓力可在約1托至100 atm範圍內,閥打開及關閉頻率可在約0.1 Hz至1 kHz範圍內,且工作循環可在約0.01至0.99範圍內。In one embodiment, the eductor operating under the reaction unit chamber vacuum may include a flow restrictor, such as a needle valve or narrow tube, where the length and diameter are controlled to control the water flow rate. Exemplary small diameter tube injectors include injectors similar to those used for ESI-ToF injection systems, such as injectors with IDs in the range of about 25 um to 300 um. The flow restrictor may be combined with at least one other injector element such as a valve or pump. In an exemplary embodiment, the head pressure of the small diameter tube is controlled by a pump such as a syringe pump. The injection rate can be further controlled by a valve from the tube to the reaction unit chamber. The discharge pressure can be applied by pressurizing the gas on the surface of the water, where the gas is compressible and the water is incompressible. Gas pressurization can be applied by means of a pump. The water spray rate can be controlled by at least one of pipe diameter, length, discharge pressure and valve opening and closing frequency and duty cycle. Tube diameters can range from about 10 um to 10 mm, lengths can range from about 1 cm to 1 m, discharge pressures can range from about 1 Torr to 100 atm, and valve opening and closing frequencies can range from about 0.1 Hz to 1 kHz range, and the duty cycle may be in the range of about 0.01 to 0.99.

在實施例中,SunCell®包含諸如氫氣之氫源及諸如氧氣之氧源。氫及氧源中之至少一者的源包含至反應單元腔室之至少一或多個氣體槽、流調節器、壓力計、閥及氣體管線。在實施例中,HOH催化劑係由氫及氧之燃燒產生。氫氣及氧氣可流入反應單元腔室中。諸如氫及氧中之至少一者的反應物之入口流可為連續或間歇的。可控制流動速率及排出或真空流動速率以達成所要壓力。入口流可為間歇的,其中該流可在所需範圍之最大壓力下停止且在所需範圍之最小值下開始。H2 壓力及流動速率以及O2 壓力及流動速率中之至少一者可經控制以將HOH及H2 濃度或分壓中之至少一者保持在所要範圍內,以控制及最佳化來自低能量氫反應之功率。在一實施例中,氫庫存及流量中之至少一者顯著地大於氧庫存及流量。H2 與O2 之分壓及H2 與O2 的流動速率中之至少一者的比率可在約1.1至10,000、1.5至1000、1.5至500、1.5至100、2至50及2至10的至少一個範圍內。在實施例中,總壓力可保持在支援初生HOH及原子H之高濃度的範圍內,諸如在約1毫托至500托、10毫托至100托、100毫托至50托及1毫托至100托之至少一個壓力範圍內。在一實施例中,儲集器及反應單元腔室中之至少一者可保持在大於氧(氫氧)化鎵及氫氧化鎵中之至少一者的分解溫度之操作溫度下。操作溫度可在約200℃至2000℃、200℃至1000℃及200℃至700℃之至少一個範圍內。在抑制氧(氫氧)化鎵及氫氧化鎵形成之情況下,可將水庫存控制在氣態中。In an embodiment, SunCell® includes a source of hydrogen, such as hydrogen, and a source of oxygen, such as oxygen. The source of at least one of the hydrogen and oxygen sources includes at least one or more gas tanks, flow regulators, pressure gauges, valves, and gas lines to the reaction unit chamber. In an embodiment, the HOH catalyst is produced by the combustion of hydrogen and oxygen. Hydrogen and oxygen can flow into the reaction unit chamber. The inlet flow of reactants such as at least one of hydrogen and oxygen may be continuous or intermittent. The flow rate and exhaust or vacuum flow rate can be controlled to achieve the desired pressure. The inlet flow can be intermittent, wherein the flow can be stopped at the maximum pressure of the desired range and started at the minimum of the desired range. H 2 pressure and the flow rate and O 2 pressure and flow rates of the at least one can be controlled to the HOH and H 2 concentration or the partial pressure of the at least one held in the desired range, in order to control and optimize from the low The power of the energy hydrogen reaction. In one embodiment, at least one of hydrogen inventory and flow is significantly greater than oxygen inventory and flow. And the partial pressure of H 2 O 2 and flow rate of the H 2 O 2 in a ratio of at least one may be from about 1.1 to 10,000,1.5 to 1000,1.5 to 500,1.5 to 100, 2 to 50 and 2 to 10 at least one of the ranges. In embodiments, the total pressure may be maintained in a range that supports high concentrations of nascent HOH and atomic H, such as about 1 mTorr to 500 Torr, 10 mTorr to 100 Torr, 100 mTorr to 50 Torr, and 1 mTorr within at least one pressure range to 100 Torr. In one embodiment, at least one of the reservoir and the reaction cell chamber can be maintained at an operating temperature that is greater than the decomposition temperature of at least one of gallium oxy(hydroxide) and gallium hydroxide. The operating temperature may be in at least one range of about 200°C to 2000°C, 200°C to 1000°C, and 200°C to 700°C. With suppression of the formation of gallium oxy(hydroxide) and gallium hydroxide, the water inventory can be controlled in the gaseous state.

在一實施例中,SunCell®包含氣體混合器以混合流入反應單元腔室中的至少兩種氣體,諸如氫氣及氧氣。在實施例中,用於水之微型噴射器包含混合氫氣及氧氣之混合器,其中混合物在其進入反應單元腔室時形成HOH。混合器可進一步包含至少一個質量流量控制器,諸如用於每一氣體或諸如預混合氣體之氣體混合物的質量流量控制器。預混合氣體可包含呈所要莫耳比之每一氣體,諸如包含氫氣及氧氣之混合物。H2 -O2 混合物之H2 莫耳百分比可顯著過量,諸如在O2 之莫耳百分比的約1.5倍至1000倍之莫耳比範圍內。質量流量控制器可控制氫氣及氧氣流動及後續燃燒以形成HOH催化劑,使得流入反應單元腔室中之所得氣體包含過量氫氣及HOH催化劑。在例示性實施例中,H2 莫耳百分比在HOH之莫耳百分比的約1.5至1000倍的範圍內。混合器可包含氫氧炬。炬可包含此項技術中已知之設計,諸如商業氫氧炬。在例示性實施例中,O2 與H2 藉由炬噴射器混合以使得O2 在H2 流內形成HOH,以避免氧氣與鎵電池組分或電解質反應來溶解氧化鎵,從而促進其藉由諸如NaI電解質或本發明之另一電解質之原位電解而再生為鎵。替代地,相較於供應炬之兩個流量控制器,藉由單個流量控制器使包含至少十倍莫耳過量之氫氣的H2 -O2 混合物流動至反應單元腔室中。In one embodiment, the SunCell® includes a gas mixer to mix at least two gases, such as hydrogen and oxygen, flowing into the reaction cell chamber. In an embodiment, the micro-injector for water comprises a mixer that mixes hydrogen and oxygen, where the mixture forms HOH as it enters the reaction unit chamber. The mixer may further comprise at least one mass flow controller, such as a mass flow controller for each gas or gas mixture such as a premixed gas. The premixed gas may comprise each gas in a desired molar ratio, such as a mixture comprising hydrogen and oxygen. H H 2 -O 2 mixture of 2 mole percentage excess can be significant, such as in O mole percentage of from about 1.5 to 1000 times the molar ratio range 2. A mass flow controller can control the flow and subsequent combustion of hydrogen and oxygen to form the HOH catalyst such that the resulting gas flowing into the reaction unit chamber contains excess hydrogen and HOH catalyst. In an exemplary embodiment, H 2 mole percentage in the range of about 1.5 to 1000-fold of the mole percentage of HOH. The mixer may contain a hydrogen-oxygen torch. Torches may comprise designs known in the art, such as commercial oxyhydrogen torches. In the illustrative embodiment, is mixed with H 2 O 2 by the torch injector is formed so that the O 2 in the H 2 stream HOH to avoid oxygen gallium cell components or reaction of the electrolyte dissolved gallium, by thus contributing to the Regeneration to gallium by in situ electrolysis of an electrolyte such as NaI or another electrolyte of the present invention. Alternatively, the supply of the torch compared to the two flow controllers, so that by a single flow controller comprising H 2 -O 2 mixture of at least tenfold molar excess of hydrogen flow into the reaction chamber means.

藉由使H2 O與鎵反應以形成H2 及Ga2 O3 ,將氫氣作為H2 氣體而非水作為H2 源供應至反應單元腔室可減少所形成之Ga2 O3 的量。包含氣體混合器之微型噴水器可具有允許在極低流動速率下噴射精確量之水的能力的有利特性,此係由於相對於液體流更精確控制氣體流之能力。此外,O2 與過量H2 之反應相比於包含複數個氫鍵結之水分子的大量水及蒸汽可形成約100%初生水作為初始產物。在一實施例中,鎵保持在低於100℃之溫度下,使得鎵對於藉由形成氧化鎵來消耗HOH催化劑可具有低反應性。鎵可藉由冷卻系統保持在低溫下,該冷卻系統諸如包含用於儲集器及反應單元腔室中之至少一者的熱交換器或水浴的冷卻系統。在例示性實施例中,SunCell®在諸如99% H2 /1% O2 之高流動速率H2 及痕量O2 流量條件下操作,其中反應單元腔室壓力可保持為較低,諸如在約1至30托之壓力範圍內,且流動速率可經控制以產生所需功率,其中藉由形成H2 (1/4)之理論最大功率可為約1 kW/30 sccm。任何所得氧化鎵可藉由原位氫電漿及電解還原而還原。在能夠產生75 kW之最大過量功率的例示性實施例中,其中真空系統能夠達成超高度真空,操作條件為約無氧化物鎵表面、諸如約1至5托之低操作壓力,及諸如約2000 sccm之高H2 流量,以及經由炬噴射器供應的作為約10至20 sccm氧之痕量HOH催化劑。So that H 2 O by the reaction with gallium Ga 2 O 3 and 2 to form H, the H 2 gas instead of hydrogen as water is supplied to the Ga reaction chamber unit can be reduced by the amount of formed 2 O 3 as source of H 2. Micro-sprinklers that include gas mixers may have advantageous properties that allow the ability to spray precise amounts of water at very low flow rates due to the ability to more precisely control gas flow relative to liquid flow. Furthermore, the reaction of O 2 with excess H 2 can form about 100% nascent water as the initial product compared to large amounts of water and steam that contain multiple hydrogen-bonded water molecules. In one embodiment, the gallium is maintained at a temperature below 100°C so that the gallium may have low reactivity for depleting the HOH catalyst by forming gallium oxide. The gallium can be maintained at low temperature by a cooling system, such as a cooling system including a heat exchanger or a water bath for at least one of the reservoir and the reaction unit chamber. Embodiment, SunCell® operated at trace H 2 O 2 and flow conditions such as high flowing 99% H 2/1% O 2 at a rate of the exemplary embodiment, wherein the reaction cell chamber pressure may be kept low, such as a pressure within the range of about 1 to 30 Torr, the flow rate and can be controlled to produce the desired power, where H 2 (1/4) is formed by the theoretical maximum power of about 1 kW / 30 sccm. Any resulting gallium oxide can be reduced by in situ hydrogen plasma and electrolytic reduction. In an exemplary embodiment capable of producing a maximum excess power of 75 kW, where the vacuum system is capable of ultra-high vacuum, operating conditions are about an oxide-free gallium surface, a low operating pressure such as about 1 to 5 Torr, and a low operating pressure such as about 2000 the high H 2 sccm flow rate, and supplied via a torch injector as from about 10 to 20 sccm oxygen traces of HOH catalyst.

在一實施例中,SunCell®之接觸鎵之組件或組件表面,諸如反應單元腔室壁、反應單元腔室之頂部、儲集器之內壁及EM泵管之內壁中之至少一者可塗佈有不容易與鎵形成合金的塗層,諸如陶瓷,諸如富鋁紅柱石、BN或本發明中之另一者;或金屬,諸如W、Ta、Re、Nb、Zr、Mo、TZM或本發明中之另一者。在另一實施例中,表面可包覆有不容易與鎵形成合金之材料,諸如碳;陶瓷,諸如BN、氧化鋁、氧化鋯、石英或本發明中之另一者;或金屬,諸如W、Ta、Re或本發明中之另一者。在一實施例中,反應單元腔室、儲集器及EM泵管中之至少一者可包含Nb、Zr、W、Ta、Re、Mo或TZM。在一實施例中,諸如反應單元腔室、儲集器及EM泵管的SunCell®組件或組件之部分可包含除了在接觸鎵之溫度超過極值(諸如超過約400℃、500℃、600℃、700℃、800℃、900℃及1000℃之至少一個極值)時並不形成合金的材料。SunCell®可在其中組件之部分未達到發生鎵合金形成之溫度的溫度下操作。SunCell®操作溫度可藉由諸如熱交換器或水浴之冷卻構件進行的冷卻來控制。水浴可包含使諸如來自水歧管之射流之水射流衝擊,其中入射於反應腔室上之射流之數目及流動速率或每一射流中之至少一者由控制器控制以使反應腔室保持在所要操作溫度範圍內。在諸如包含至少一個表面之水射流冷卻之實施例中,SunCell®之至少一個組件之外部表面可包覆有諸如碳之絕緣體以保持升高的內部溫度,同時允許操作冷卻。在其中SunCell®藉由諸如諸如水之冷卻劑中之懸浮液或經受衝擊之冷卻劑射流中之至少一者的手段冷卻之實施例中,EM泵管經隔熱以防止冷的液體金屬噴射至電漿中以避免降低低能量氫反應速率。在例示性隔熱實施例中,EM泵管5k6可澆鑄於為極好隔熱體之水泥型材料中(例如,水泥型材料可具有小於1 W/mK或小於0.5 W/mK或小於0.1 W/mK之熱導率)。在高於SunCell®操作期間達成之溫度極值下形成鎵合金的表面可選擇性地塗佈或包覆有不容易與鎵形成合金的材料。SunCell®組件之接觸鎵且超過諸如不鏽鋼之組件材料之合金溫度的部分可包覆有不容易與鎵形成合金的材料。在例示性實施例中,反應單元腔室壁可包覆有W、Ta、Re、Mo、TZM、鈮、釩或鋯板或諸如石英之陶瓷,尤其在電極附近的其中反應單元腔室溫度最大之區處。包層可包含反應單元腔室襯裡5b31a。襯裡可包含墊片或其他鎵不可滲透材料,諸如定位於襯裡與反應單元腔室壁之間的陶瓷糊狀物,以防止鎵在襯裡後方滲漏。襯裡可藉由焊縫、螺栓或此項技術中已知之另一扣件或黏著劑中之至少一者而附接至壁。In one embodiment, at least one of the gallium-contacting components or component surfaces of the SunCell®, such as the walls of the reaction unit chamber, the top of the reaction unit chamber, the inner wall of the reservoir, and the inner wall of the EM pump tube may be Coated with coatings that do not readily alloy with gallium, such as ceramics, such as mullite, BN, or another of the present invention; or metals, such as W, Ta, Re, Nb, Zr, Mo, TZM, or another of the present invention. In another embodiment, the surface may be coated with a material that does not easily alloy with gallium, such as carbon; a ceramic, such as BN, alumina, zirconia, quartz, or another of the present invention; or a metal, such as W , Ta, Re or another of the present invention. In one embodiment, at least one of the reaction unit chamber, the reservoir, and the EM pump tube may comprise Nb, Zr, W, Ta, Re, Mo, or TZM. In one embodiment, SunCell® components or portions of components such as reaction cell chambers, reservoirs, and EM pump tubes may contain gallium exposure at temperatures exceeding extremes, such as exceeding about 400°C, 500°C, 600°C , 700°C, 800°C, 900°C, and 1000°C at least one extreme value) that does not form an alloy. SunCell® can operate at temperatures where parts of the assembly do not reach the temperature at which gallium alloy formation occurs. SunCell® operating temperature can be controlled by cooling by cooling means such as a heat exchanger or water bath. The water bath may comprise impinging water jets, such as jets from a water manifold, wherein at least one of the number and flow rate of jets incident on the reaction chamber or each jet is controlled by a controller to maintain the reaction chamber at within the desired operating temperature range. In embodiments such as water jet cooling comprising at least one surface, the exterior surface of at least one component of the SunCell® may be coated with an insulator, such as carbon, to maintain elevated interior temperatures while allowing operational cooling. In embodiments in which the SunCell® is cooled by means such as at least one of a suspension in a coolant such as water or a jet of coolant that is impacted, the EM pump tubing is insulated to prevent the spray of cold liquid metal to in the plasma to avoid reducing the rate of low-energy hydrogen reactions. In an exemplary insulating embodiment, the EM pump tube 5k6 may be cast in a cementitious material that is an excellent insulator (eg, the cementitious material may have less than 1 W/mK or less than 0.5 W/mK or less than 0.1 W /mK thermal conductivity). Surfaces that form gallium alloys above the temperature extremes achieved during SunCell® operation can be selectively coated or coated with materials that do not readily alloy with gallium. Portions of SunCell® components that contact gallium and exceed the alloying temperature of component materials such as stainless steel can be coated with materials that do not readily alloy with gallium. In an exemplary embodiment, the reaction unit chamber walls may be clad with W, Ta, Re, Mo, TZM, niobium, vanadium, or zirconium plates or ceramics such as quartz, especially near the electrodes where the reaction unit chamber temperature is greatest area. The cladding may comprise the reaction cell chamber liner 5b31a. The liner may contain a gasket or other gallium impermeable material, such as a ceramic paste positioned between the liner and the reaction cell chamber wall, to prevent gallium leakage behind the liner. The liner can be attached to the wall by at least one of welds, bolts, or another fastener or adhesive known in the art.

在一實施例中,諸如10、5k2中之至少一者的匯流條,及自匯流條至點火及EM泵電源中之至少一者的對應電引線可充當用於自反應單元腔室5b31移除熱量之構件以供應用。SunCell®可包含熱交換器以自匯流條及對應引線中之至少一者移除熱量。在包含MHD轉換器之SunCell®實施例中,匯流條及其引線上之熱量損耗可藉由熱交換器傳回至反應單元腔室,該熱交換器將熱量自匯流條傳遞至熔融銀,該熔融銀藉由EM泵自MHD轉換器傳回至反應單元腔室。In one embodiment, a bus bar, such as at least one of 10, 5k2, and corresponding electrical leads from the bus bar to at least one of ignition and EM pump power supplies may serve as for removal from reaction cell chamber 5b31 A component of heat for use. SunCell® may include a heat exchanger to remove heat from at least one of the bus bars and corresponding leads. In SunCell® embodiments including MHD converters, heat losses on the bus bars and their leads can be transferred back to the reaction cell chamber by means of a heat exchanger that transfers heat from the bus bars to the molten silver, which Molten silver is transferred from the MHD converter back to the reaction unit chamber by the EM pump.

在實施例中,反應單元腔室之側壁,諸如立方形反應單元腔室之四個豎直側或圓柱形單元之壁)可經塗佈或包覆於諸如W、Ta或Re之耐火金屬中,或由諸如W、Ta或Re襯裡之耐火金屬覆蓋。金屬可對與鎵形成合金具有抗性。反應單元腔室之頂部可經包覆或塗佈有電絕緣體,或包含電絕緣襯裡,諸如陶瓷。例示性包層、塗層及襯裡材料為BN、大猩猩玻璃(例如,可購自康寧之鹼鋁矽酸鹽玻璃片)、石英、二氧化鈦、氧化鋁、氧化釔、氧化鉿、氧化鋯、碳化矽、諸如熱解石墨之石墨、經碳化矽塗佈之石墨或諸如TiO2 -Yr2 O3 -Al2 O3 之混合物中之至少一者。頂部襯裡可具有用於底座5c1 (圖23)之穿透件。頂部襯裡可防止頂部電極8電短路至反應單元腔室之頂部。在一實施例中,頂部凸緣409a (圖29A至圖29C)可包含襯裡,諸如本發明之襯裡;或塗層,諸如陶瓷塗層,諸如富鋁紅柱石、ZTY、Resbond或本發明之另一塗層;或塗料,諸如VHT FlameproofTMIn an embodiment, the side walls of the reaction cell chamber, such as the four vertical sides of a cubic reaction cell chamber or the walls of a cylindrical cell, may be coated or clad in a refractory metal such as W, Ta, or Re , or covered by a refractory metal such as a W, Ta or Re lining. Metals can be resistant to alloying with gallium. The top of the reaction unit chamber can be clad or coated with an electrical insulator, or include an electrical insulating liner, such as ceramic. Exemplary cladding, coating, and lining materials are BN, Gorilla Glass (eg, alkali aluminosilicate glass flakes available from Corning), quartz, titanium dioxide, aluminum oxide, yttrium oxide, hafnium oxide, zirconium oxide, carbide silicon, such as graphite, pyrolytic graphite, silicon carbide coated by the graphite or as a mixture of TiO 2 -Yr 2 O 3 -Al 2 O 3 is at least one of the. The top liner may have penetrations for the base 5c1 (FIG. 23). The top liner prevents the top electrode 8 from being electrically shorted to the top of the reaction cell chamber. In one embodiment, the top flange 409a (FIGS. 29A-29C) may comprise a lining, such as the lining of the present invention; or a coating, such as a ceramic coating, such as mullite, ZTY, Resbond, or another of the present invention. a coating; or paint, such as VHT Flameproof .

在一實施例中,SunCell®包含底板409a熱量感測器、點火電源控制器、點火電源及關斷開關,該關斷開關可直接地或間接地連接至點火電源控制器及點火電源中之至少一者以在底板409a處發生短路且其過熱時終止點火。在一實施例中,陶瓷襯裡包含複數個區段,其中該等區段在區段之間提供擴展間隙或接合部中之至少一者且限制沿著襯裡之複數個區段之長度的熱量梯度。在一實施例中,可將襯裡懸浮於液體金屬位準上方以避免在襯裡之一部分浸沒於鎵中的情況下形成之陡峭熱梯度。在操作期間,襯裡區段可包含用於具有不同溫度範圍之不同區的不同材料組合。在包含至少兩種類型之陶瓷的複數個陶瓷區段之襯裡的例示性實施例中,諸如接近正電極之區的最熱區中之區段可包含SiC或BN,且至少一個其他區段可包含石英。In one embodiment, the SunCell® includes a backplane 409a thermal sensor, an ignition power controller, an ignition power supply, and a shutdown switch that can be directly or indirectly connected to at least one of the ignition power controller and the ignition power supply. One terminates the ignition when a short circuit occurs at the bottom plate 409a and it overheats. In one embodiment, the ceramic liner comprises a plurality of sections, wherein the sections provide at least one of expansion gaps or junctions between the sections and limit the thermal gradient along the length of the plurality of sections of the liner . In one embodiment, the liner may be suspended above the liquid metal level to avoid the steep thermal gradients that develop if a portion of the liner is partially immersed in gallium. During operation, the liner sections may contain different combinations of materials for different zones with different temperature ranges. In an exemplary embodiment of a liner comprising a plurality of ceramic segments of at least two types of ceramics, the segment in the hottest region, such as the region near the positive electrode, may comprise SiC or BN, and at least one other segment may comprise SiC or BN. Contains quartz.

在實施例中,反應單元腔室5b31包含內部隔熱體(在本文中亦被稱作襯裡),諸如至少一個陶瓷或碳襯裡,諸如石英、BN、氧化鋁、氧化鋯、氧化鉿或本發明之另一襯裡。在一些實施例中,反應單元腔室不包含襯裡,諸如陶瓷襯裡。在一些實施例中,反應單元腔室壁可包含金屬,該金屬在不鏽鋼,諸如SS 347,諸如4130合金SS或Cr-Mo SS或W、Ta、Mo、Nb、Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%)、Os、Ru、Hf、Re或經矽化物塗佈Mo的情況下保持在低於與熔融金屬發生合金之溫度下,諸如低於約400℃至500℃。在諸如其中反應單元腔室浸沒於諸如水之冷卻劑中的實施例中,反應單元腔室5b31壁厚度可為薄的,使得內壁溫度低於壁材料(諸如347 SS,諸如4130合金SS、Cr-Mo SS或Nb-Mo(5 wt%)-Zr(1 wt%))與諸如鎵之熔融金屬形成合金的溫度。反應單元腔室壁厚度可為約小於5 mm、小於4 mm、小於3 mm、小於2 mm及小於1 mm中之至少一者。襯裡內部之溫度可高得多,諸如在約500℃至3400℃、500℃至2500℃、500℃至1000℃及500℃至1500℃之至少一個範圍內。在例示性實施例中,反應單元腔室及儲集器包含複數個襯裡,諸如BN最內襯裡,其可包含W、Ta或Re嵌體且可經分段;及一或多個同心外石英襯裡。底板襯裡可包含內BN板及至少一個其他陶瓷板,其各自具有用於穿透件之穿孔。在一實施例中,穿透件可用諸如陶瓷水泥之水泥,諸如Resbond,或在熔融鎵之情況下對熔融金屬合金形成具有抗性的耐火粉末,諸如W粉末密封。例示性底板襯裡為可模製陶瓷絕緣盤。在一實施例中,襯裡可包含耐火或陶瓷嵌體,諸如W或Ta嵌體。陶瓷嵌體可包含陶瓷瓷磚,諸如包含堆疊成圓柱體之小高度半圓形環之陶瓷瓷磚。例示性陶瓷為氧化鋯、氧化釔穩定之氧化鋯、氧化鉿、氧化鋁及氧化鎂。環之高度可在約1 mm至5 cm範圍內。在另一實施例中,嵌體可包含可藉由高溫結合材料或水泥保持在適當位置之瓷磚或珠粒。替代地,瓷磚或珠粒可嵌入於耐火基質,諸如碳;耐火金屬,諸如W、Ta或Mo;或耐火二硼化或碳化物,諸如Ta、W、Re、Ti、Zr或Hf之二硼化或碳化物,諸如ZrB2 、TaC、HfC及WC或本發明中之另一者。In an embodiment, the reaction cell chamber 5b31 contains an internal insulator (also referred to herein as a liner), such as at least one ceramic or carbon liner, such as quartz, BN, alumina, zirconia, hafnium oxide, or the present invention Another lining. In some embodiments, the reaction unit chamber does not contain a liner, such as a ceramic liner. In some embodiments, the reaction cell chamber walls may comprise metal in stainless steel, such as SS 347, such as 4130 alloy SS or Cr-Mo SS or W, Ta, Mo, Nb, Nb (94.33 wt%)-Mo (4.86 wt%)-Zr (0.81 wt%), Os, Ru, Hf, Re or in the case of silicide-coated Mo kept below the temperature at which alloying with the molten metal occurs, such as below about 400°C to 500°C. In embodiments such as where the reaction unit chamber is immersed in a coolant such as water, the reaction unit chamber 5b31 wall thickness may be thin such that the inner wall temperature is lower than the wall material (such as 347 SS, such as 4130 Alloy SS, The temperature at which Cr-Mo SS or Nb-Mo (5 wt %)-Zr (1 wt %)) is alloyed with a molten metal such as gallium. The reaction unit chamber wall thickness may be about at least one of less than 5 mm, less than 4 mm, less than 3 mm, less than 2 mm, and less than 1 mm. The temperature inside the liner can be much higher, such as in at least one range of about 500°C to 3400°C, 500°C to 2500°C, 500°C to 1000°C, and 500°C to 1500°C. In an exemplary embodiment, the reaction unit chamber and reservoir include a plurality of liners, such as a BN innermost liner, which may include W, Ta, or Re inlays and may be segmented; and one or more concentric outer liners Quartz lining. The bottom liner may include an inner BN plate and at least one other ceramic plate, each with perforations for penetrations. In one embodiment, the penetration may be sealed with a cement such as ceramic cement, such as Resbond, or in the case of molten gallium, a refractory powder that is resistant to molten metal alloy formation, such as W powder. An exemplary floor liner is a moldable ceramic insulating disk. In one embodiment, the liner may comprise a refractory or ceramic inlay, such as a W or Ta inlay. Ceramic inlays may comprise ceramic tiles, such as ceramic tiles comprising semicircular rings of small height stacked into cylinders. Exemplary ceramics are zirconia, yttria stabilized zirconia, hafnium oxide, alumina, and magnesia. The height of the ring may range from about 1 mm to 5 cm. In another embodiment, the inlay may comprise tiles or beads that can be held in place by high temperature bonding materials or cement. Alternatively, the tiles or beads may be embedded in a refractory matrix such as carbon; a refractory metal such as W, Ta or Mo; or a refractory diboride or carbide such as diboron of Ta, W, Re, Ti, Zr or Hf or carbides, such as ZrB 2, TaC, HfC or WC and the other of the present invention.

在例示性實施例中,襯裡可包含在鎵表面層級處具有石英之分段環,且環之其餘部分可包含SiC。石英分段可包含斜削石英板,其形成諸如六邊形或八邊形環之環。在另一例示性實施例中,反應單元腔室壁可經噴塗、碳塗佈或陶瓷塗佈,且襯裡可包含具有內耐火金屬襯裡之碳,諸如包含Nb、Mo、Ta或W之襯裡。另一內襯裡可包含耐火金屬環,諸如鎵表面處之六邊形或八邊形環,諸如包含斜削耐火金屬板之耐火金屬環,諸如包含Nb、Mo、Ta或W板之耐火金屬環。In an exemplary embodiment, the liner may comprise a segmented ring with quartz at the gallium surface level, and the remainder of the ring may comprise SiC. The quartz segment may comprise a beveled quartz plate that forms a ring such as a hexagonal or octagonal ring. In another exemplary embodiment, the reaction unit chamber walls may be sprayed, carbon coated, or ceramic coated, and the lining may comprise carbon with an inner refractory metal lining, such as a lining comprising Nb, Mo, Ta, or W. Another inner liner may comprise a refractory metal ring, such as a hexagonal or octagonal ring at the gallium surface, such as a refractory metal ring comprising a beveled refractory metal plate, such as a refractory metal comprising a Nb, Mo, Ta or W plate ring.

隔熱體可包含真空間隙。真空間隙可包含在具有比儲集器之直徑小的直徑的襯裡與反應單元腔室壁之間的空間,其中反應單元腔室壓力低,諸如約低於50托。為防止電漿接觸反應單元腔室壁,反應單元腔室可包含頂蓋或蓋,諸如陶瓷塞,諸如BN塞。低能量氫反應混合物氣體管線可供應反應單元腔室,且真空管線可提供氣體抽空。真空間隙可藉由單獨的真空管線連接或藉由至由反應單元腔室或其真空管線提供之真空的連接而抽空。為防止熱鎵接觸儲集器壁,儲集器壁可包含諸如至少一個石英襯裡之襯裡,其具有自儲集器之基底至剛好高於鎵位準的高度,其中襯裡移位熔融鎵以提供隔熱而免於熱鎵與壁接觸。The insulator may contain a vacuum gap. The vacuum gap may comprise the space between the liner having a diameter smaller than the diameter of the reservoir and the walls of the reaction unit chamber, where the reaction unit chamber pressure is low, such as below about 50 Torr. To prevent the plasma from contacting the reaction cell chamber walls, the reaction cell chamber may contain a cap or cover, such as a ceramic plug, such as a BN plug. A low energy hydrogen reaction mixture gas line can supply the reaction cell chamber, and a vacuum line can provide gas evacuation. The vacuum gap can be evacuated by a separate vacuum line connection or by a connection to the vacuum provided by the reaction cell chamber or its vacuum line. To prevent the hot gallium from contacting the reservoir walls, the reservoir walls may include a liner, such as at least one quartz liner, having a height from the base of the reservoir to just above the gallium level, wherein the liner displaces the molten gallium to provide Insulate from thermal gallium contact with the wall.

單元壁可為薄的以增強分子低能量氫產物之滲透性,從而避免產物抑制。襯裡可包含多孔材料,諸如BN、多孔石英、多孔SiC或氣體間隙以促進低能量氫產物自反應單元腔室擴散及滲透。反應單元腔室壁可包含對分子低能量氫高度可滲透之材料,諸如Cr-Mo SS,諸如4130合金SS。The cell walls can be thin to enhance the permeability of molecular low energy hydrogen products, thereby avoiding product inhibition. The liner may comprise a porous material, such as BN, porous quartz, porous SiC, or gas gaps to facilitate diffusion and permeation of the low energy hydrogen product from the reaction cell chamber. The reaction cell chamber walls may comprise a material that is highly permeable to molecular low energy hydrogen, such as Cr-Mo SS, such as 4130 alloy SS.

在一實施例中,至少一個SunCell®組件,諸如反應單元腔室5b31之壁、儲集器5c之壁、EM泵管5k6之壁、底板5kk1及頂部凸緣409a可塗佈有塗層,諸如本發明中之一者,諸如對與熔融金屬形成合金具有抗性且抗與O2 及H2 O中之至少一者的腐蝕中之至少一者的陶瓷。塗層及經塗佈組件之熱膨脹係數可為大約匹配的,諸如在約0.1至10、0.1至5及0.1至2之因數的至少一個範圍內。在具有低熱膨脹係數之陶瓷塗層的情況下,選擇具有類似熱膨脹係數的諸如科伐合金或鎳鋼之經塗佈金屬用於經塗佈組件。In one embodiment, at least one SunCell® component, such as the walls of the reaction cell chamber 5b31, the walls of the reservoir 5c, the walls of the EM pump tubing 5k6, the bottom plate 5kk1, and the top flange 409a may be coated with a coating such as by one of the present invention, such as a ceramic resistant and resistant to corrosion and O 2 and H 2 O in at least one of the at least one of the pair of forming an alloy with the molten metal. The coefficients of thermal expansion of the coating and the coated component may be approximately matched, such as within at least one range of factors of about 0.1 to 10, 0.1 to 5, and 0.1 to 2. In the case of a ceramic coating with a low coefficient of thermal expansion, a coated metal with a similar coefficient of thermal expansion, such as Kovar or nickel steel, is chosen for the coated component.

在一實施例中,EM泵管5k6及附接至EM泵管5k6之EM匯流條5k2在熱膨脹係數方面大約匹配。在例示性實施例中,連接至EM泵匯流條5k2之EM泵管區段包含鎳鋼或科伐合金以匹配W匯流條之低熱膨脹係數。In one embodiment, the EM pump tubes 5k6 and the EM bus bars 5k2 attached to the EM pump tubes 5k6 are approximately matched in thermal expansion coefficients. In an exemplary embodiment, the section of EM pump tubing connected to the EM pump bus bar 5k2 comprises nickel steel or Kovar to match the low coefficient of thermal expansion of the W bus bar.

在一實施例中,包含襯裡之至少一個組件可由冷卻系統冷卻。冷卻系統可將組件溫度保持為低於與諸如鎵之熔融金屬形成合金的溫度。冷卻系統可包含水浴,組件浸沒於該水浴中。冷卻系統可進一步包含衝擊於冷卻組件上之水射流。在例示性實施例中,組件包含EM泵管,且EM泵管之水浴浸沒及水射流冷卻可藉由使用具有極低熱導率之EM泵管襯裡(諸如包含石英之襯裡)對由EM泵泵抽之熱鎵進行最少冷卻而實施。In one embodiment, at least one component including the liner may be cooled by a cooling system. The cooling system can maintain the temperature of the components below the temperature of alloying with molten metals such as gallium. The cooling system may include a water bath in which the components are submerged. The cooling system may further include water jets impinging on the cooling element. In an exemplary embodiment, the assembly includes an EM pump tube, and water bath immersion and water jet cooling of the EM pump tube can be achieved by using an EM pump tube liner with very low thermal conductivity, such as a liner comprising quartz The pumped hot gallium is implemented with minimal cooling.

初生水及原子氫之形成 在一實施例中,反應單元腔室進一步包含解離器腔室,其容納載體(諸如碳)上之氫解離劑(諸如Pt、Pd、Ir、Re)或其他解離金屬,或呈提供高表面積(諸如粉末、墊、織物或編織物)之形式之陶瓷珠粒(諸如Al2 O3 、二氧化矽或沸石珠粒、阮尼鎳或Ni、鈮、鈦或本發明之其他解離金屬)。在一實施例中,SunCell®包含再結合器以將所供應H2 及O2 催化反應至HOH及H,該HOH及H流動至反應單元腔室5b31中。再結合器可進一步包含控制器,該控制器包含以下各者中之至少一者:溫度感測器、加熱器及冷卻系統,諸如感測再結合器溫度且控制冷卻系統(諸如噴水器及加熱器)中之至少一者,以將再結合器催化劑保持在所要操作溫度範圍,諸如在約60℃至600℃範圍內之溫度範圍的熱交換器。上限溫度受到再結合器催化劑燒結且損失有效催化劑表面積之溫度限制。 Formation of Nascent Water and Atomic Hydrogen In one embodiment, the reaction cell chamber further comprises a dissociator chamber that contains a hydrogen dissociator (such as Pt, Pd, Ir, Re) or other dissociated metal on a support (such as carbon) , or ceramic beads such as Al 2 O 3 , silica or zeolite beads, Raney nickel or Ni, niobium, titanium or the present invention in a form that provides a high surface area such as powder, mat, fabric or braid other dissociated metals). In one embodiment, the SunCell® includes a recombiner to catalyze the reaction of the supplied H 2 and O 2 to HOH and H, which flow into the reaction cell chamber 5b31. The recombiner may further include a controller including at least one of a temperature sensor, a heater, and a cooling system, such as sensing recombiner temperature and controlling cooling systems such as sprinklers and heating at least one of the heat exchangers) to maintain the recombiner catalyst in a desired operating temperature range, such as a heat exchanger in a temperature range in the range of about 60°C to 600°C. The upper temperature is limited by the temperature at which the recombiner catalyst sinters and loses effective catalyst surface area.

H2 /O2 再結合反應之H2 O產率可能並非100%,尤其在流動條件下。移除氧氣以防止氧化物塗層形成可允許點火功率降低約10%至100%之範圍。再結合器可包含用於移除約所有氧氣之構件,該氧氣藉由將其轉化為H2 O而流動至電池中。再結合器可進一步充當解離器以形成H原子及HOH催化劑,該等H原子及HOH催化劑流過氣體管線至反應單元腔室。再結合器中之氣體之較長流動路徑可增加再結合器中之停留時間且允許O2 至H2 反應更接近完成。然而,再結合器及氣體管線中之較長路徑可允許更加不合需要之H再結合及HOH二聚合。因此,在再結合器中最佳化流動路徑長度之競爭效應之平衡,且可最小化氣體管線自再結合器/解離器至反應單元腔室之長度。H 2 / O 2 recombination reaction of H 2 O to 100% may not yield, in particular under flow conditions. Removal of oxygen to prevent oxide coating formation may allow ignition power to be reduced in the range of about 10% to 100%. Recombination may be used to remove approximately all of the oxygen comprise means of the oxygen by converting it into H 2 O and flows to the battery. The recombiner can further act as a dissociator to form H atoms and HOH catalyst, which flow through the gas line to the reaction unit chamber. The longer the flow path of the gas is combined with the combined increase of the residence time of the reactor and allowing the reaction H 2 O 2 is closer to completion. However, longer paths in the recombiners and gas lines may allow for more undesirable H recombination and HOH dimerization. Thus, the balance of competing effects of flow path length is optimized in the recombiner, and the length of gas lines from the recombiner/dissociator to the reaction unit chamber can be minimized.

在一實施例中,將諸如O2 或H2 O之氧氣來源供應至反應單元腔室引起反應單元腔室之氧氣庫存增加。在鎵為熔融金屬之情況下,氧氣庫存可包含氧化鎵、H2 O及O2 中之至少一者。氧氣庫存對於形成用於低能量氫反應之HOH催化劑而言可為必要的。然而,熔融金屬(諸如液體鎵上之氧化鎵)上之氧化物塗層可引起低能量氫反應之抑制及固定點火電流下之點火電壓的增加。在一實施例中,氧氣庫存經最佳化。最佳化可藉由用控制器使氧氣間歇性地流動來達成。替代地,氧氣可以高速率流動直至累積最佳庫存為止,且接著可降低流動速率以在較低流動速率下保持所要最佳庫存,該較低流動速率平衡藉由自反應單元腔室及儲集器藉由諸如藉由真空泵排氣之手段移除氧氣庫存而耗盡的速率。在例示性實施例中,氣體流動速率為約2500 sccm H2 /250 sccm O2 ,持續約1分鐘,以載入約100 cc反應單元腔室及約1 kg鎵儲集器庫存,且接著此後為約2500 sccm H2 /5 sccm O2 。氧化物層並未形成或正被消耗之指示為在恆定點火電流下點火電壓隨時間之降低,其中電壓可由電壓感測器監測,且氧氣流動速率可由控制器控制。In one embodiment, the source of oxygen such as O 2 or H 2 O supplied to the reaction unit of the chamber to cause the oxygen in the reaction chamber stock unit increases. In the case of molten metal gallium, gallium oxide may comprise oxygen gas stock, H 2 O and O 2 in the at least one. Oxygen inventories may be necessary to form HOH catalysts for low energy hydrogen reactions. However, oxide coatings on molten metals, such as gallium oxide on liquid gallium, can cause suppression of low energy hydrogen reactions and an increase in ignition voltage at a fixed ignition current. In one embodiment, the oxygen inventory is optimized. Optimization can be achieved by intermittently flowing oxygen with the controller. Alternatively, oxygen can flow at a high rate until an optimal inventory is accumulated, and then the flow rate can be reduced to maintain the desired optimal inventory at a lower flow rate balanced by the self-reaction cell chamber and the reservoir The rate at which the device is depleted by removing the oxygen inventory, such as by evacuating through a vacuum pump. In an exemplary embodiment, the gas flow rate is about 2500 sccm H 2 /250 sccm O 2 for about 1 minute to load about 100 cc reaction cell chamber and about 1 kg gallium reservoir inventory, and then thereafter is about 2500 sccm H 2 /5 sccm O 2 . An indication that the oxide layer is not forming or is being consumed is the decrease in firing voltage over time at a constant firing current, where the voltage can be monitored by a voltage sensor and the oxygen flow rate can be controlled by a controller.

在一實施例中,SunCell®包含點火功率參數感測器及氧氣源流動速率控制器,其感測固定電流下之點火電壓、固定電壓下之點火電流及點火功率中之至少一者,且回應於功率參數改變氧氣源流動速率。氧氣源可包含氧氣及水中之至少一者。在例示性實施例中,氧氣源控制器可基於點火電壓控制至反應單元腔室中之氧氣流量,其中反應單元腔室中之氧氣庫存回應於由點火功率參數感測器感測到之低於臨限電壓之電壓而增加且回應於感測到之高於臨限電壓之電壓而減小。In one embodiment, SunCell® includes an ignition power parameter sensor and an oxygen source flow rate controller that senses at least one of ignition voltage at fixed current, ignition current at fixed voltage, and ignition power, and responds Change the oxygen source flow rate based on the power parameter. The oxygen source may include at least one of oxygen and water. In an exemplary embodiment, the oxygen source controller may control the flow of oxygen into the reaction unit chamber based on the firing voltage, wherein the oxygen inventory in the reaction unit chamber is responsive to being lower than sensed by the firing power parameter sensor The voltage of the threshold voltage increases and decreases in response to a sensed voltage above the threshold voltage.

為了提高再結合器產率,可增大再結合器停留時間、表面積及催化活性。可選擇具有較高動力學之催化劑。操作溫度可增加。To increase recombiner productivity, recombiner residence time, surface area, and catalytic activity can be increased. Catalysts with higher kinetics can be selected. The operating temperature can be increased.

在另一實施例中,再結合器包含熱絲,諸如經貴金屬黑塗覆之Pt長絲,諸如Pt-黑-Pt長絲。長絲可保持在足夠高的溫度下以藉由電源供應器、溫度感測器及控制器保持的電阻性加熱來保持所要再結合速率。In another embodiment, the recombiner comprises a hot filament, such as a noble metal black coated Pt filament, such as a Pt-black-Pt filament. The filaments can be maintained at a temperature high enough to maintain the desired recombination rate by resistive heating maintained by the power supply, temperature sensor, and controller.

在一實施例中,H2 /O2 再結合器包含電漿源,諸如輝光放電、微波、射頻(RF)、感應或電容耦合RF電漿。作為再結合器切斷之放電電池可具有高真空能力。圖31A-C中所示之例示性放電電池900包含不鏽鋼容器或輝光放電電漿腔室901,其在頂部具有用鍍銀銅墊片密封之配對頂板903的Conflat凸緣902。頂板可具有至內部鎢棒電極905之高電壓饋通904。電池本體可經接地以充當相對電極。頂部凸緣可進一步包含用於H2 、O2 及混合物之至少一個氣體入口906。不鏽鋼容器之底板907可包含至反應單元腔室之氣體出口。輝光放電電池進一步包含電源,諸如具有在約10 V至5 kV範圍內之電壓及在約0.01 A至100 A範圍內之電流的DC電源。可根據帕申定律(Paschen's law)選擇用於所要氣壓、電極分離及放電電流之輝光放電崩潰及維護電壓。輝光放電電池可進一步包含諸如火花塞點火系統之用以引起氣體崩潰以啟動放電電漿的構件,其中輝光放電電漿功率在保持輝光放電之較低保持電壓下操作。崩潰電壓可在約50 V至5 kV範圍內,且維護電壓可在約10 V至1 kV範圍內。輝光放電電池可與其他SunCell®組件(諸如反應單元腔室5b31及儲集器5c)電隔離以防止點火功率短路。壓力波可引起輝光放電不穩定性,其在流動至反應單元腔室5b31中之反應物中產生變化且可損壞輝光放電電源供應器。為防止歸因於低能量氫反應之背壓波傳播至輝光放電電漿腔室內,反應單元腔室5b31可包含擋扳,諸如旋擰至電極匯流條上之BN套管中的擋扳,其中來自輝光放電電池之氣體管線進入反應單元腔室。輝光放電電源供應器可包含至少一個電湧保護器元件,諸如電容器。可模擬放電電池之長度及反應單元腔室高度以藉由減小用於可能再結合之距離來減小自輝光放電電漿至鎵正表面之距離,從而增大原子氫及HOH催化劑之濃度。In one embodiment, H 2 / O 2 recombination comprises a plasma source, such as a glow discharge, microwave, radio frequency (RF), inductively or capacitively coupled RF plasma. Discharged cells cut off as recombiners can have high vacuum capability. The exemplary discharge cell 900 shown in FIGS. 31A-C includes a stainless steel vessel or glow discharge plasma chamber 901 with a Conflat flange 902 on top of a mating top plate 903 sealed with a silver-plated copper gasket. The top plate may have a high voltage feedthrough 904 to the inner tungsten rod electrodes 905 . The battery body can be grounded to serve as the opposing electrode. It may further comprise a top flange H 2, O 2 and mixtures of at least one gas inlet 906. The bottom plate 907 of the stainless steel vessel may contain a gas outlet to the reaction cell chamber. The glow discharge cell further includes a power source, such as a DC power source having a voltage in the range of about 10 V to 5 kV and a current in the range of about 0.01 A to 100 A. Glow breakdown and maintenance voltages for the desired gas pressure, electrode separation and discharge current can be selected according to Paschen's law. The glow discharge cell may further include means, such as a spark plug ignition system, to cause gas collapse to initiate a discharge plasma, wherein the glow discharge plasma power operates at a lower holding voltage that maintains the glow discharge. The breakdown voltage may be in the range of about 50 V to 5 kV, and the maintenance voltage may be in the range of about 10 V to 1 kV. The glow discharge cell can be electrically isolated from other SunCell® components, such as reaction cell chamber 5b31 and reservoir 5c, to prevent shorting of ignition power. Pressure waves can cause glow discharge instabilities that produce changes in the reactants flowing into the reaction cell chamber 5b31 and can damage the glow discharge power supply. To prevent backpressure waves due to low energy hydrogen reactions from propagating into the glow discharge plasma chamber, the reaction cell chamber 5b31 may contain a baffle, such as a baffle screwed into a BN sleeve on the electrode bus bar, where The gas line from the glow discharge cell enters the reaction cell chamber. The glow discharge power supply may contain at least one surge protector element, such as a capacitor. The length of the discharge cell and the height of the reaction cell chamber can be simulated to reduce the distance from the glow discharge plasma to the gallium positive surface by reducing the distance for possible recombination, thereby increasing the concentration of atomic hydrogen and HOH catalyst.

在一實施例中,可將電漿電池與反應單元腔室5b31之間的連接區域最小化,以避免原子H壁再結合及HOH二聚合。諸如輝光放電電池之電漿電池可直接連接至電隔離器,諸如陶瓷隔離器,諸如直接連接至反應單元腔室之頂部凸緣409a之來自Solid Seal Technologies公司的電隔離器。電隔離器可藉由焊接、凸緣接頭或此項技術中已知之其他緊固件連接至放電電池及凸緣。電隔離器之內徑可較大,諸如約為放電電池腔室之直徑,諸如在約0.05公分至15公分的範圍內。在其中SunCell®及放電電池之本體保持在相同電壓(諸如在接地位準)下之另一實施例中,放電電池可直接連接至反應單元腔室,諸如在反應單元腔室之頂部凸緣409a處。連接件可包含焊接件、凸緣接頭或此項技術中已知之其他緊固件。連接件之內徑可較大,諸如約為放電電池腔室之直徑,諸如在約0.05 cm至15 cm之範圍內。In one embodiment, the connection area between the plasma cell and the reaction cell chamber 5b31 may be minimized to avoid atomic H-wall recombination and HOH dimerization. Plasma cells, such as glow discharge cells, can be connected directly to electrical isolators, such as ceramic isolators, such as those from Solid Seal Technologies, which are directly connected to the top flange 409a of the reaction cell chamber. The electrical isolator can be attached to the discharge cell and flange by welding, flanged joints, or other fasteners known in the art. The inner diameter of the electrical isolator may be larger, such as about the diameter of the discharge cell chamber, such as in the range of about 0.05 cm to 15 cm. In another embodiment where the bodies of the SunCell® and the discharge cell are kept at the same voltage (such as at ground level), the discharge cell may be connected directly to the reaction cell chamber, such as at the top flange 409a of the reaction cell chamber place. Connections may include welds, flanged joints, or other fasteners known in the art. The inner diameter of the connector may be larger, such as about the diameter of the discharge cell chamber, such as in the range of about 0.05 cm to 15 cm.

輸出功率位準可藉由氫氣及氧氣流動速率、放電電流、點火電流及電壓以及EM泵電流及熔融金屬溫度來控制。SunCell®可包含用於此等及其他參數中之每一者的對應感測器及控制器以控制輸出功率。諸如鎵之熔融金屬可保持在約200℃至2200℃之溫度範圍內。在包含具有沿反應單元腔室壁之Mo襯墊的8吋直徑4130 Cr-Mo SS電池的例示性實施例中,輝光放電氫氣解離器及再結合器藉由Conflat凸緣之0.75吋OD集直接連接反應單元腔室之凸緣409a,輝光放電電壓為260 V;輝光放電電流為2 A;氫氣流動速率為2000 sccm;氧氣流動速率為1 sccm;操作壓力為5.9托;鎵溫度在水浴冷卻下保持在400℃下;點火電流及電壓為1300 A及26至27 V;EM泵速率為100 g/s,且對於29 kW之輸入點火功率,輸出功率超過300 kW,對應於至少10倍之增益。Output power levels can be controlled by hydrogen and oxygen flow rates, discharge current, ignition current and voltage, and EM pump current and molten metal temperature. SunCell® may include corresponding sensors and controllers for each of these and other parameters to control output power. Molten metals such as gallium can be maintained in a temperature range of about 200°C to 2200°C. In an exemplary embodiment comprising an 8-inch diameter 4130 Cr-Mo SS cell with Mo liner along the reaction cell chamber wall, the glow discharge hydrogen dissociator and recombiner are directly via the 0.75-inch OD set of the Conflat flange Connecting the flange 409a of the reaction unit chamber, the glow discharge voltage is 260 V; the glow discharge current is 2 A; the hydrogen flow rate is 2000 sccm; the oxygen flow rate is 1 sccm; the operating pressure is 5.9 Torr; Maintained at 400°C; ignition current and voltage of 1300 A and 26 to 27 V; EM pump rate of 100 g/s, and output power exceeding 300 kW for an input ignition power of 29 kW, corresponding to a gain of at least 10 times .

在一實施例中,諸如輝光放電電池再結合器之再結合器可藉由諸如水之冷卻劑冷卻。在例示性實施例中,再結合器之電饋通可經水冷卻。再結合器可浸沒於攪拌水浴中以用於冷卻。再結合器可包含安全切斷開關,該安全切斷開關感測離散電壓且在電壓高於臨限值時終止電漿電源供應器,該臨限值諸如在約0 V至20 V(例如,0.1 V至20 V)之範圍內的臨限值。In one embodiment, a recombiner such as a glow discharge battery recombiner may be cooled by a coolant such as water. In an exemplary embodiment, the electrical feedthrough of the recombiner may be water cooled. The recombiner can be submerged in a stirred water bath for cooling. The recombiner may include a safety disconnect switch that senses discrete voltages and terminates the plasma power supply when the voltage is above a threshold value, such as at about 0 V to 20 V (eg, Threshold values in the range of 0.1 V to 20 V).

在一實施例中,SunCell®包含作為驅動電漿電池,諸如放電電池,諸如輝光放電、微波放電或感應或電容耦合放電電池,其中低能量氫反應混合物包含相對於H2 (66.6%)至O2 (33.3%)莫耳百分比之化學計量混合物超過氧氣的本發明之低能量氫反應混合物,諸如氫氣。驅動電漿電池可包含能夠真空之容器、反應混合物供應器、真空泵、壓力計、流量計、電漿產生器、電漿電源供應器及控制器。保持低能量氫反應之電漿源在Mills先前申請案中給出,該等申請案以引用之方式併入。電漿源可在低能量氫反應混合物中保持電漿,該低能量氫反應混合物包含氫與氧之混合物,相較於H2 (66.6%)至O2 (33.3%)莫耳百分比之化學計量混合物氧不足。氫氧混合物之氧不足可在自化學計量混合物之約5%至99%範圍內。混合物可包含約99.66%至68.33% H2 及約0.333%至31.66% O2 之莫耳百分比。此等混合物可在穿過諸如輝光放電之電漿電池後產生反應混合物,該輝光放電足以在與反應單元腔室中之偏壓熔融金屬相互作用後誘發如本文所描述之催化反應。In one embodiment, SunCell® driving a plasma comprising a battery, such as battery discharge, such as a glow discharge, microwave discharge or inductive or capacitive coupling discharge of the battery, wherein the reaction mixture comprises a low energy with respect to the hydrogen H 2 (66.6%) to O 2 (33.3%) mole percent of the low energy hydrogen reaction mixture of the invention, such as hydrogen, in which the stoichiometric mixture exceeds oxygen. The drive plasma cell may include a vacuum capable vessel, a reaction mixture supply, a vacuum pump, a pressure gauge, a flow meter, a plasma generator, a plasma power supply, and a controller. Plasma sources for maintaining low energy hydrogen reactions are given in Mills prior applications, which are incorporated by reference. The plasma source can maintain a plasma in a low energy hydrogen reaction mixture comprising a mixture of hydrogen and oxygen, compared to the stoichiometry of H 2 (66.6%) to O 2 (33.3%) mole percent The mixture is deficient in oxygen. The oxygen deficit of the hydrogen-oxygen mixture can range from about 5% to 99% of the stoichiometric mixture. The mixture may comprise from about 99.66% to 68.33% H 2 and from about 0.333% to 31.66% O 2 mole percentage of. These mixtures can produce reaction mixtures after passing through a plasma cell such as a glow discharge sufficient to induce a catalytic reaction as described herein upon interaction with the biased molten metal in the reaction cell chamber.

在一實施例中,可藉由諸如葉輪之速度氣流構件或藉由噴氣口將形成於電漿電池流出處之反應混合物氣體加壓至反應池中以增加反應物通過電池之流動速率,同時將反應池壓力保持在所要範圍中。高速度氣體可在噴射至反應單元腔室中之前傳遞通過再結合器電漿源。In one embodiment, the reactant mixture gas formed at the outflow of the plasma cell can be pressurized into the reaction cell by a velocity gas flow member such as an impeller or by a gas jet to increase the flow rate of the reactants through the cell, while increasing the flow rate of the reactants through the cell. The reaction cell pressure was maintained in the desired range. The high velocity gas can be passed through the recombiner plasma source before being injected into the reaction cell chamber.

在一實施例中,電漿再結合器/解離器藉由將原子H及HOH催化劑自外部電漿再結合器/解離器直接噴射至反應單元腔室中來保持反應單元腔室中原子H及HOH催化劑中之至少一者之高濃度。對應反應條件可類似於由反應單元腔室中之極高溫產生的產生極高的動力學及功率效應之反應條件。例示性高溫範圍為約2000℃至3400℃。在一實施例中,SunCell®包含複數個再結合器/解離器,諸如噴射原子H及HOH催化劑中之至少一者之電漿放電電池再結合器/解離器,其中噴射至反應單元腔室中可藉由流動進行。In one embodiment, the plasma recombiner/dissociator maintains atomic H and HOH catalysts in the reaction unit chamber by injecting atomic H and HOH catalyst directly into the reaction unit chamber from an external plasma recombiner/dissociator High concentration of at least one of the HOH catalysts. The corresponding reaction conditions may be similar to the reaction conditions resulting in extremely high kinetic and power effects produced by the extremely high temperature in the reaction unit chamber. An exemplary high temperature range is about 2000°C to 3400°C. In one embodiment, the SunCell® includes a plurality of recombiners/dissociators, such as plasma discharge cell recombiners/dissociators that inject at least one of atomic H and HOH catalysts into the reaction unit chamber It can be done by flow.

在另一實施例中,諸如H2 槽之氫氣來源可連接至歧管,該歧管可連接至至少兩個質量流量控制器(MFC)。第一MFC可將H2 氣體供應至接受H2 管線及來自稀有氣體來源(諸如氬氣槽)之稀有氣體管線之第二歧管。第二歧管可在殼體中輸出至連接至解離劑(諸如催化劑,諸如Pt/Al2 O3 、Pt/C或本發明之另一者)的管線,其中解離劑之輸出可為至反應單元腔室之管線。第二MFC可將H2 氣體供應至接受H2 管線及來自諸如O2 槽之氧氣源的氧氣管線之第三歧管。第三歧管可在殼體中輸出至至再結合器(諸如催化劑,諸如Pt/Al2 O3 、Pt/C或本發明之另一者)的管線,其中再結合器之輸出可為至反應單元腔室之管線。In another embodiment, the source of hydrogen such as H 2 of the tank may be connected to the manifold, the manifold may be connected to at least two mass flow controllers (MFC). The first MFC can supply H 2 gas to a second manifold that receives the H 2 line and the rare gas line from a rare gas source such as an argon tank. Second manifold output in a housing to be connected to a dissociation agent (such as a catalyst, such as Pt / Al 2 O 3, Pt / C according to the present invention or the other) line, wherein the dissociation agent can be output to the reaction Lines of unit chambers. The second MFC H 2 gas may be supplied to and from a receiving line, such as H 2 O 2 of the third manifold oxygen line groove of an oxygen source tube. The third manifold may be output through the housing to the recombination device (such as a catalyst, such as Pt / Al 2 O 3, Pt / C according to the present invention or the other) line, wherein the output device may be combined to Lines of the reaction unit chamber.

替代地,第二MFC可連接至藉由第一MFC供應之第二歧管。在另一實施例中,第一MFC可使氫氣直接流動至再結合器或再結合器及第二MFC。氬氣可藉由第三MFC供應,該第三MFC自諸如氬氣槽之供應器接收氣體且將氬氣直接輸出至反應單元腔室中。Alternatively, the second MFC may be connected to the second manifold supplied by the first MFC. In another embodiment, the first MFC may flow hydrogen directly to the recombiner or the recombiner and the second MFC. Argon can be supplied by a third MFC that receives gas from a supply such as an argon tank and outputs argon directly into the reaction cell chamber.

在另一實施例中,H2 可自其供應器(諸如H2 槽)流動至輸出至第一歧管之第一MFC。O2 可自其供應器(諸如O2 槽)流動至輸出至第一歧管之第二MFC。第一歧管可輸出至輸出至第二歧管之再結合器/解離器。稀有氣體(諸如氬氣)可自其供應器(諸如氬氣槽)流動至輸出至反應單元腔室之第二歧管。其他流程方案在本發明之範疇內,其中該等流程藉由氣體供應器、MFC、歧管及此項技術中已知之連接件以可能有序排列遞送反應物氣體。In another embodiment, H 2 may flow from its supply, such as an H 2 tank, to the first MFC output to the first manifold. O 2 can flow from its supply, such as an O 2 tank, to the second MFC outputting to the first manifold. The first manifold may output to a recombiner/dissociator that outputs to the second manifold. A noble gas, such as argon, can flow from its supply, such as an argon tank, to a second manifold output to the reaction cell chamber. Other flow schemes are within the scope of the present invention, wherein such flows deliver reactant gases in possibly ordered arrangements by means of gas supplies, MFCs, manifolds, and connections known in the art.

在一實施例中,SunCell®包含以下中之至少一者:氫(諸如水或氫氣)之來源,諸如氫氣槽;用以控制自源(諸如氫質量流量控制器)之流動的構件;壓力調節器;管線(諸如氫氣管線),自氫來源至腔室中之熔融金屬位準以下的儲集器或反應單元腔室中之至少一者;及控制器。可將氫或氫氣源直接引入熔融金屬中,其中濃度或壓力可大於藉由金屬外部之引入達成之濃度或壓力。較高濃度或壓力可提高熔融金屬中之氫的溶解度。氫可溶解為原子氫,其中諸如鎵或鎵銦錫合金之熔融金屬可充當解離劑。在另一實施例中,氫氣管線可包含氫解離劑,諸如載體上之貴金屬,諸如Al2 O3 載體上之Pt。原子氫可自反應單元腔室中之熔融金屬的表面釋放以支援低能量氫反應。氣體管線可具有來自氫氣源之入口,該入口位於比進入熔融金屬之出口高的高度以防止熔融金屬反向流動至質量流量控制器中。氫氣管線可延伸至熔融金屬中,且可進一步包含在末端處之氫氣擴散器以分佈氫氣。管線(諸如氫氣管線)可包含U區段或阱。管線可進入熔融金屬上方之反應單元腔室且包含在熔融金屬表面下方彎曲之區段。氫氣源(諸如氫氣槽、調節器及質量流量控制器)中之至少一者可提供氫或氫氣之來源之充足壓力以克服管線(諸如氫氣管線)之出口處的熔融金屬之排出壓力,從而准許氫或氫氣流之所需來源。In one embodiment, the SunCell® includes at least one of: a source of hydrogen (such as water or hydrogen), such as a hydrogen tank; means to control flow from a source (such as a hydrogen mass flow controller); pressure regulation a line, such as a hydrogen line, from a hydrogen source to at least one of a reservoir or reaction unit chamber below the molten metal level in the chamber; and a controller. Hydrogen or a source of hydrogen can be introduced directly into the molten metal, where the concentration or pressure can be greater than that achieved by external introduction of the metal. Higher concentrations or pressures increase the solubility of hydrogen in the molten metal. Hydrogen can be dissolved as atomic hydrogen, where molten metals such as gallium or gallium indium tin alloys can act as dissociating agents. In another embodiment, the hydrogen line may contain a hydrogen dissociation agent, such as a noble metal on a support, such as Pt on an Al 2 O 3 support. Atomic hydrogen may be released from the surface of the molten metal in the reaction cell chamber to support the low energy hydrogen reaction. The gas line may have an inlet from the hydrogen source at a higher level than the outlet into the molten metal to prevent reverse flow of the molten metal into the mass flow controller. The hydrogen line may extend into the molten metal, and may further include a hydrogen diffuser at the end to distribute the hydrogen. Lines, such as hydrogen lines, may contain U-sections or traps. Lines may enter the reaction unit chamber above the molten metal and contain sections that bend below the surface of the molten metal. At least one of a source of hydrogen, such as a hydrogen tank, a regulator, and a mass flow controller, can provide sufficient pressure of the hydrogen or source of hydrogen to overcome the discharge pressure of the molten metal at the outlet of the line, such as the hydrogen line, allowing for Desired source of hydrogen or hydrogen stream.

在一實施例中,SunCell®包含氫來源,諸如槽、閥、調節器、壓力計、真空泵及控制器,且可進一步包含自氫來源形成原子氫之至少一個構件,諸如以下中之至少一者:氫解離劑(諸如本發明中之一者,諸如Re/C或Pt/C)及電漿源(諸如低能量氫反應電漿);高電壓電源,其可施加至SunCell®電極以保持輝光放電電漿;RF電漿源;微波電漿源;或保持反應單元腔室中之氫電漿的本發明之另一電漿源。氫來源可供應加壓氫氣。加壓氫氣之來源可為用氫氣可逆地及間歇性地加壓反應單元腔室中之至少一者。加壓氫氣可溶解於諸如鎵之熔融金屬中。形成原子氫之構件可提高氫在熔融金屬中之溶解度。反應單元腔室氫壓可在約0.01 atm至1000 atm、0.1 atm至500 atm及0.1 atm至100 atm之至少一個範圍內。可藉由在允許吸收之停留時間之後抽空而移除氫氣。停留時間可在約0.1秒至60分鐘、1秒至30分鐘及1秒至1分鐘之至少一個範圍內。SunCell®可包含複數個反應單元腔室及一控制器,其可間歇性地供應有原子氫且以協調方式與氫氣一起加壓及減壓中之至少一者,其中每一反應單元腔室可吸收氫氣,同時另一者加壓或供應原子氫、被抽空,或在保持低能量氫反應之操作中。用於使得氫氣吸收至熔融鎵中之例示性系統及條件由Carreon[M.L.Carreon,「H2 及N2 與熔融鎵在電漿之存在下的協同相互作用(Synergistic interactions of H2 and N2 with molten gallium in the presence of plasma)」,真空科學與技術期刊,第36卷,第2期,(2018),021303,第1-8頁;https://doi.org/10.1116/1.5004540]給出,其以引用的方式併入本文中。在例示性實施例中,SunCell®在諸如0.5至10 atm之高氫壓下操作,其中電漿顯示輸入功率比連續電漿及點火電流情況下低得多的脈衝式行為。接著,壓力保持在約1托至5托下,其中1500 sccm H2 +15 sccm O2 在大於90℃下流過1 g之Pt/Al2 O3 ,且接著流動至反應單元腔室中,其中高輸出功率藉由在提高鎵溫度下自鎵除氣之額外H2 產生。或可重複對應H2 載入(鎵吸收)及卸載(來自鎵之H2 排氣)。In one embodiment, the SunCell® includes a source of hydrogen, such as tanks, valves, regulators, pressure gauges, vacuum pumps, and controllers, and may further include at least one means for forming atomic hydrogen from the source of hydrogen, such as at least one of the following : hydrogen dissociation agent (such as one of the present invention, such as Re/C or Pt/C) and plasma source (such as low energy hydrogen reaction plasma); high voltage power supply, which can be applied to SunCell® electrodes to maintain the glow A discharge plasma; an RF plasma source; a microwave plasma source; or another plasma source of the present invention that maintains the hydrogen plasma in the reaction cell chamber. The hydrogen source may supply pressurized hydrogen. The source of pressurized hydrogen may be at least one of reversibly and intermittently pressurizing the reaction unit chambers with hydrogen. Pressurized hydrogen can dissolve in molten metals such as gallium. The atomic hydrogen-forming structure increases the solubility of hydrogen in the molten metal. The reaction unit chamber hydrogen pressure may be in at least one of a range of about 0.01 atm to 1000 atm, 0.1 atm to 500 atm, and 0.1 atm to 100 atm. Hydrogen can be removed by evacuation after a residence time to allow absorption. The residence time may be in the range of at least one of about 0.1 second to 60 minutes, 1 second to 30 minutes, and 1 second to 1 minute. SunCell® may include a plurality of reaction unit chambers that may be intermittently supplied with atomic hydrogen and at least one of pressurized and depressurized with the hydrogen in a coordinated manner, wherein each reaction unit chamber may be Hydrogen is absorbed while the other is pressurizing or supplying atomic hydrogen, being evacuated, or in operation to maintain a low energy hydrogen reaction. For causing the absorption of hydrogen to the exemplary system and conditions of the molten gallium Carreon [MLCarreon, "synergistic interaction of H 2 and N 2 with a melt of gallium in the presence of plasma (Synergistic interactions of H 2 and N 2 with molten gallium in the presence of plasma)”, Journal of Vacuum Science and Technology, Vol. 36, No. 2, (2018), 021303, pp. 1-8; https://doi.org/10.1116/1.5004540] gives, It is incorporated herein by reference. In an exemplary embodiment, the SunCell® operates at high hydrogen pressures, such as 0.5 to 10 atm, where the plasma exhibits pulsed behavior with much lower input power than with continuous plasma and ignition current. Subsequently, pressure was maintained at about 1 torr to 5 torr, where 1500 sccm H 2 +15 sccm O 2 at greater than 90 deg.] C flows through the G 1 Pt / Al 2 O 3, and then flows to the reaction chamber means, wherein high power output by improving the gallium from the gallium temperature of excess H 2 gas is generated in addition. Or the corresponding H 2 loading (Ga uptake) and unloading (H 2 exhaust from gallium) can be repeated.

在一實施例中,氫或氫氣之來源可在推動熔融金屬至一對電極之反電極的方向上直接噴射至熔融金屬中,其中熔融金屬浴充當電極。氣體管線可充當噴射器,其中諸如H2 氣體噴射之氫或氫氣噴射之來源可至少部分地充當熔融金屬噴射器。EM泵噴射器可充當包含至少兩個電極及電力源之點火系統之額外熔融金屬噴射器。In one embodiment, hydrogen or a source of hydrogen gas may be injected directly into the molten metal in a direction that pushes the molten metal to the opposite electrode of a pair of electrodes, where the molten metal bath acts as the electrode. Gas line may act as an injector, wherein the injection of H 2 gas such as hydrogen or a hydrogen source may be at least partially ejecting the molten metal to serve as an injector. The EM pump injector can act as an additional molten metal injector for an ignition system comprising at least two electrodes and a power source.

在一實施例中,SunCell®包含分子氫解離劑。解離劑可容納於反應單元腔室中或與反應單元腔室氣體連通之分離腔室中。分離殼體可防止解離劑歸因於曝露於熔融金屬(諸如鎵)而失效。解離劑可包含解離材料,諸如負載型Pt,諸如氧化鋁珠粒上之Pt或本發明或此項技術中已知之另一者。替代地,解離劑可包含熱絲或電漿放電源,諸如輝光放電、微波電漿、電漿炬、感應或電容耦合RF放電、電介質障壁放電、壓電直接放電、聲學放電或本發明或此項技術中已知之另一放電電池。熱絲可藉由使電流流經電隔離饋通以穿透反應單元腔室壁且接著通過長絲的電源電阻地加熱。In one embodiment, SunCell® includes a molecular hydrogen dissociation agent. The dissociating agent may be contained in the reaction unit chamber or in a separation chamber in gaseous communication with the reaction unit chamber. Separating the housing prevents the dissociation agent from failing due to exposure to molten metal, such as gallium. The dissociating agent may comprise a dissociating material, such as supported Pt, such as Pt on alumina beads or another one of the present invention or known in the art. Alternatively, the dissociating agent may comprise a hot filament or plasma discharge source, such as a glow discharge, microwave plasma, plasma torch, inductively or capacitively coupled RF discharge, dielectric barrier discharge, piezoelectric direct discharge, acoustic discharge or the present invention or the like Another discharge battery known in the art. The hot filaments can be resistively heated by passing current through an electrically isolated feedthrough to penetrate the reaction cell chamber walls and then through the filament's power supply.

在另一實施例中,可增大點火電流以增大氫解離速率及電漿離子-電子再結合速率中之至少一者。在一實施例中,點火波形可包含DC偏移,諸如在約1 V至100 V電壓範圍內之DC偏移,其中疊加之AC電壓在約1 V至100 V範圍內。DC電壓可充分增加AC電壓以在低能量氫反應混合物中形成電漿,且AC分量可包含在電漿存在下之高電流,諸如在約100 A至100,000 A範圍內。具有AC調變之DC電流可引起點火電流在對應AC頻率下經脈衝,該AC頻率諸如在約1 Hz至1 MHz、1 Hz至1 kHz及1 Hz至100 Hz之至少一個範圍內的頻率。在一實施例中,增加EM泵抽以減小電阻且增加電流及點火功率之穩定性。In another embodiment, the ignition current may be increased to increase at least one of the hydrogen dissociation rate and the plasma ion-electron recombination rate. In one embodiment, the firing waveform may include a DC offset, such as a DC offset in the range of about 1 V to 100 V, with the superimposed AC voltage in the range of about 1 V to 100 V. The DC voltage can sufficiently increase the AC voltage to form a plasma in the low energy hydrogen reaction mixture, and the AC component can include high currents in the presence of the plasma, such as in the range of about 100 A to 100,000 A. The DC current with AC modulation can cause the ignition current to be pulsed at a corresponding AC frequency, such as a frequency in at least one of a range of about 1 Hz to 1 MHz, 1 Hz to 1 kHz, and 1 Hz to 100 Hz. In one embodiment, EM pumping is increased to reduce resistance and increase stability of current and firing power.

在一實施例中,高壓輝光放電可藉助於微空心陰極放電來保持。微空心陰極放電可保持在具有大致100微米直徑之開口的兩個緊密間隔的電極之間。例示性直流放電可保持至多約大氣壓。在一實施例中,高氣壓下之較大體積電漿可經由重疊同時操作的單獨輝光放電保持。電漿電流可為DC或AC中之至少一者。In one embodiment, the high voltage glow discharge can be maintained by means of a micro hollow cathode discharge. A micro-hollow cathode discharge can be held between two closely spaced electrodes with openings approximately 100 microns in diameter. Exemplary DC discharges can be maintained up to about atmospheric pressure. In one embodiment, a larger volume of plasma at high pressure can be maintained via overlapping separate glow discharges operating simultaneously. The plasma current can be at least one of DC or AC.

在一實施例中,藉由供應相較於H2 O或H2 更易於解離之氫來源來增加原子氫濃度。例示性源為每一H原子具有較低焓及較低形成自由能中之至少一者的源,H原子諸如甲烷、烴、甲醇、醇、包含H之另一有機分子。In one embodiment, by supplying O compared to H 2 or H 2 easier dissociation of a hydrogen source to increase the concentration of hydrogen atoms. Exemplary sources are sources having at least one of a lower enthalpy and a lower free energy of formation per H atom, such as methane, hydrocarbons, methanol, alcohols, another organic molecule comprising H.

在一實施例中,解離劑可包含電極8,諸如圖23中所示之電極。電極8可包含能夠在諸如高達3200℃之高溫下操作之解離劑且可進一步包含對與諸如鎵之熔融金屬之合金形成具有抗性之材料。例示性電極包含W及Ta中之至少一者。在一實施例中,匯流條10可包含附接之解離器,諸如輪葉解離器,諸如平坦板。可藉由沿匯流條10的軸線封住邊緣之面來附接板。輪葉可包含漿輪模式。可藉由來自匯流條10之傳導性熱傳遞來加熱輪葉,該匯流條可藉由點火電流電阻地加熱及藉由低能量氫反應加熱中之至少一者加熱。解離劑,諸如輪葉可包含耐火金屬,諸如Hf、Ta、W、Nb或Ti。In one embodiment, the dissociating agent may comprise an electrode 8, such as the electrode shown in FIG. 23 . Electrode 8 may comprise a dissociating agent capable of operating at high temperatures such as up to 3200°C and may further comprise a material resistant to alloy formation with molten metals such as gallium. Exemplary electrodes include at least one of W and Ta. In one embodiment, the bus bar 10 may include an attached dissociator, such as a vane dissociator, such as a flat plate. The plates can be attached by sealing the faces of the edges along the axis of the bus bar 10 . The vanes may contain paddle wheel patterns. The vanes can be heated by conductive heat transfer from the bus bar 10, which can be heated by at least one of resistive heating by ignition current and reactive heating by low energy hydrogen. The dissociating agent, such as the vanes, may contain a refractory metal, such as Hf, Ta, W, Nb or Ti.

在一實施例中,SunCell®包含約單色光(例如,具有小於50 nm或小於25 nm或小於10 nm或小於5 nm之光譜頻寬的光)之來源及約單色光之窗。光可入射於諸如反應單元腔室中之氫氣的氫上。H2 之基本振動頻率為4161 cm- 1 。可能的複數個頻率中之至少一個頻率可為利用H2 之振動能的約諧振。約諧振輻射可由H2 吸收以引起選擇性H2 鍵解離。在另一實施例中,光之頻率可為約諧振,其具有(i)諸如3756 cm- 1 的H2 O之OH鍵之振動能及熟習此項技術者已知之其他能量,諸如由Lemus[R.Lemus,「本端模型之框架中之H2 O中之振動激發(Vibrational excitations in H2 O in the framework of a local model)」, J.Mol.Spectrosc.,第225卷,(2004),第73-92頁]給出之能量,其以引用方式併入;(ii)氫鍵,諸如氫鍵結H2 O分子之間之振動能;以及(iii)氫鍵結H2 O分子之間的氫鍵結能量中之至少一者,其中光之吸收引起H2 O二聚體及其他H2 O多聚體解離為初生水分子。在一實施例中,低能量氫反應氣體混合物可包含諸如來自能夠與H2 O分子H鍵結之來源的氨之額外氣體,以藉由與水二聚體H鍵結競爭來增加初生HOH之濃度。初生HOH可充當低能量氫催化劑。In one embodiment, SunCell® comprises a source of about monochromatic light (eg, light having a spectral bandwidth of less than 50 nm or less than 25 nm or less than 10 nm or less than 5 nm) and a window of about monochromatic light. Light can be incident on hydrogen such as hydrogen in the reaction cell chamber. The fundamental vibration frequency of H 2 is 4161 cm - 1 . A plurality of possible frequencies of the at least one frequency of vibration of H 2 may be approximately the resonance energy. H 2 resonance radiation may be about to cause selective absorption of H 2 bond dissociation. In another embodiment, the frequency of the optical resonator may be about, having (i) such as 3756 cm - H 1 2 O of vibration of the OH bond energy and known to those skilled in the art of other energy, such as by the Lemus, [ R.Lemus, "the vibration of the frame end model of the excitation in H 2 O (Vibrational excitations in H 2 O in the framework of a local model) ", J.Mol.Spectrosc., Vol. 225, (2004) , pp. 73-92], which are incorporated by reference; (ii) hydrogen bonds, such as vibrational energies between hydrogen-bonded H 2 O molecules; and (iii) hydrogen-bonded H 2 O molecules hydrogen bonding between at least one of energy, wherein the light absorption by H 2 O H 2 O dimers and other multimers of dissociated nascent water molecules. In one embodiment, the low energy hydrogen as the reaction gas mixture may comprise additional gas can be from a source of H 2 O molecules and H bond of the ammonia to the water by increasing the H bonded dimer compete with the primary HOH concentration. The nascent HOH can act as a low-energy hydrogen catalyst.

在一實施例中,低能量氫反應產生來自功率、熱功率、電漿、光、壓力、電磁脈衝及衝擊波之群組的至少一種反應特徵。在一實施例中,SunCell®包含至少一個感測器及至少一個控制系統以監測反應特徵且控制反應參數,諸如反應混合物組成及條件(諸如壓力及溫度)以控制低能量氫反應速率。反應混合物可包含H2 O、H2 、O2 、稀有氣體(諸如氬氣)及GaX3 (X=鹵化物)中之至少一者或其來源。在例示性實施例中,感測電磁脈衝(EMP)之強度及頻率,且控制反應參數以增加EMP之強度及頻率以增加反應速率,且反之亦然。在另一例示性實施例中,感測衝擊波頻率、強度及傳播速度,諸如兩個聲學探測器之間的彼等者中之至少一者,且控制反應參數以增加衝擊波頻率、強度及傳播速度中之至少一者,以增加反應速率,且反之亦然。In one embodiment, the low energy hydrogen reaction produces at least one reaction signature from the group of power, thermal power, plasma, light, pressure, electromagnetic pulses, and shock waves. In one embodiment, SunCell® includes at least one sensor and at least one control system to monitor reaction characteristics and control reaction parameters, such as reaction mixture composition and conditions (such as pressure and temperature) to control low energy hydrogen reaction rates. The reaction mixture may contain H 2 O, H 2, O 2, noble gases (such as argon) and GaX 3 (X = halide) or in at least one of the sources. In an exemplary embodiment, the intensity and frequency of electromagnetic pulses (EMPs) are sensed, and reaction parameters are controlled to increase the intensity and frequency of the EMPs to increase the reaction rate, and vice versa. In another exemplary embodiment, the shock wave frequency, intensity and propagation velocity are sensed, such as at least one of them between two acoustic detectors, and the response parameters are controlled to increase the shock wave frequency, intensity and propagation velocity at least one of them to increase the reaction rate, and vice versa.

熔融金屬 H2 O可與諸如鎵之熔融金屬反應以形成H2 (g)及諸如Ga2 O3 及Ga2 O之對應氧化物、諸如GaO(OH)之氧(氫氧)化物及諸如Ga(OH)3 之氫氧化物。鎵溫度可經控制以控制與H2 O之反應。在例示性實施例中,鎵溫度可保持低於100℃以達成以下中之至少一者:防止H2 O與鎵反應並使得藉由緩慢動力學發生H2 O-鎵反應。H 2 O molten metal may be molten metallic gallium reacted to form with such as H 2 (g), such as Ga 2 O 3 and Ga 2 O and of the corresponding oxides, such as a compound GaO (OH) oxy (hydroxide) and as Ga (OH) 3 hydroxide. Gallium may be controlled to control the temperature of the reaction with H 2 O it. In an exemplary embodiment, the gallium temperature may be maintained in the at least one of the following less than 100 deg.] C to achieve: gallium prevent reaction with H 2 O and H 2 O- that gallium reaction occurs by slow kinetics.

在另一例示性實施例中,鎵溫度可保持高於約100℃以使得藉由快速動力學發生H2 O-鎵反應。H2 O與鎵在反應單元腔室5b31中之反應可促進至少一種低能量氫反應物(諸如H或HOH催化劑)之形成。在一實施例中,水可噴射至反應單元腔室5b31中且可與鎵反應,鎵可保持在超過100℃之溫度下以(i)形成H2 以充當H來源;(ii)引起H2 O二聚體形成HOH單體或初生HOH以充當催化劑;及(iii)降低水蒸氣壓中之至少一者。Embodiment, gallium may be maintained above a temperature of about 100 deg.] C so that the H 2 O- gallium reaction by fast kinetics occurs in another exemplary embodiment. H 2 O in a reaction with the gallium unit 5b31 in the chamber can promote the formation of at least one low energy hydrogen reactant (such as H or catalyst HOH) of. In one embodiment, the water may be injected into the reaction cell chamber 5b31 in and may gallium reacted with gallium may be maintained at exceed 100 ℃ of temperature (i) forming H 2 to serve as the H origin; (ii) due to H 2 The O dimer forms at least one of HOH monomer or nascent HOH to act as a catalyst; and (iii) reducing water vapor pressure.

在一實施例中,GaOOH可充當固體燃料低能量氫反應物以形成HOH催化劑及H中之至少一者,從而充當反應物以形成低能量氫。在一實施例中,氧化物(諸如Ga2 O3 或Ga2 O)、氫氧化物(諸如Ga(OH)3 )及氧(氫氧)化物(諸如GaOOH、AlOOH或FeOOH)中之至少一者可充當結合諸如H2 (1/4)之低能量氫的基質。在一實施例中,將GaOOH及金屬氧化物(諸如不鏽鋼及不鏽鋼及不鏽鋼-鎵合金之氧化物)中之至少一者添加至反應單元腔室以充當低能量氫之吸氣劑。吸氣劑可加熱至高溫,諸如在約100℃至1200℃範圍內之高溫,以釋放分子低能量氫氣體,諸如H2 (1/4)。In one embodiment, GaOOH can act as a solid fuel low energy hydrogen reactant to form at least one of a HOH catalyst and H to act as a reactant to form low energy hydrogen. In one embodiment, an oxide (such as Ga 2 O 3 or Ga 2 O), hydroxides (such as 3 Ga (OH)) and oxygen (hydroxyl) compound (such as GaOOH, AlOOH or FeOOH) in at least one of It may act as a binding matrix such as H 2 (1/4) of the low-energy hydrogen. In one embodiment, at least one of GaOOH and metal oxides, such as stainless steel and oxides of stainless steel and stainless steel-gallium alloys, is added to the reaction cell chamber to act as a getter for low energy hydrogen. The getter can be heated to high temperatures, such as a temperature in the range from about 100 deg.] C to 1200 deg.] C, the release of molecules at low energy hydrogen such as H 2 (1/4).

在一實施例中,合金形成反應捕集及吸收充當吸氣劑之合金產物中的分子低能量氫中之至少一者。浸沒於液體鎵中之固體金屬件(諸如不鏽鋼(SS))可與鎵反應以形成充當分子低能量氫吸氣劑之金屬-鎵合金。在例示性實施例中,不鏽鋼反應單元腔室及儲集器壁中之至少一者可充當經消耗以形成吸收或捕集分子低能量氫之至少一種不鏽鋼合金(諸如Ga3 Fe、Ga3 Ni及Ga3 Cr中之至少一者)的反應表面。分子低能量氫氣體可歸因於滲透障壁累積於壁處。低能量氫反應產物之增加的局部濃度通常增加合金中捕獲之分子低能量氫氣體濃度。在吸收吸氣劑中之反應產物之後,吸氣劑可為可藉由諸如加熱吸氣劑之方式釋放的分子低能量氫氣體之來源。在一實施例中,吸氣劑包含氧化鎵、GaOOH及至少一種不鏽鋼合金中之至少一者。吸氣劑可溶解於諸如NaOH或KOH之鹼水溶液中以形成捕集在GaOOH基質中之分子低能量氫,諸如H2 (1/4)。In one embodiment, the alloy forming reaction captures and absorbs at least one of molecular low energy hydrogen in the alloy product acting as a getter. A solid metal piece, such as stainless steel (SS), immersed in liquid gallium can react with gallium to form a metal-gallium alloy that acts as a molecular low energy hydrogen getter. In an exemplary embodiment, a stainless steel reaction unit chamber and the reservoir wall is at least one may act via consumed to form an absorbent or trap molecules of hydrogen low energy of at least one stainless steel alloy (such as Ga 3 Fe, Ga 3 Ni and at least one of Ga 3 Cr) on the reactive surface. Molecular low energy hydrogen gas can be attributed to the accumulation of permeation barriers at the walls. The increased local concentration of the low energy hydrogen reaction product generally increases the concentration of molecular low energy hydrogen gas trapped in the alloy. After absorbing the reaction products in the getter, the getter can be a source of molecular low energy hydrogen gas that can be released by, for example, heating the getter. In one embodiment, the getter includes at least one of gallium oxide, GaOOH, and at least one stainless steel alloy. Getter soluble in aqueous base such as NaOH or KOH to the catcher molecules are formed in the matrix GaOOH low energy hydrogen such as H 2 (1/4).

在一實施例中,本發明之固體燃料(諸如FeOOH、鹼鹵化物-氫氧化物混合物及諸如Cu(OH)2 +FeBr2 之過渡金屬鹵化物-氫氧化物混合物)可經活化以藉由施加熱及施加機械功率中之至少一者發生反應以形成低能量氫。後者可藉由球磨固體燃料來達成。In one embodiment, the solid fuel of the present invention (such as FeOOH, alkali halide - hydroxide, and mixtures such as Cu (OH) a transition metal halide 2 + FeBr 2 - A mixture of hydroxides) may be activated to by At least one of applying heat and applying mechanical power reacts to form low energy hydrogen. The latter can be achieved by ball milling the solid fuel.

在一替代實施例中,SunCell®包含冷卻劑流熱交換器,其包含抽汲系統,其中反應單元腔室藉由流動冷卻劑而冷卻,其中流動速率可變化以控制反應單元腔室在所要溫度範圍內操作。熱交換器可包含具有諸如微通道板之通道的板。在一實施例中,SunCell®包含電池,其包含反應單元腔室531、儲集器5c、底座5c1及與低能量氫反應電漿接觸之所有組件,其中一或多個組件可包含電池區。在一實施例中,熱交換器(諸如包含流動冷卻劑之熱交換器)可包含複數個熱交換器,該等熱交換器組織在電池區中以將對應電池區保持在單獨所需溫度下。In an alternate embodiment, the SunCell® includes a coolant flow heat exchanger that includes a pumping system in which the reaction unit chamber is cooled by flowing a coolant, wherein the flow rate can be varied to control the reaction unit chamber at a desired temperature operate within the scope. Heat exchangers may comprise plates with channels such as microchannel plates. In one embodiment, the SunCell® includes a battery that includes the reaction cell chamber 531, the reservoir 5c, the base 5c1, and all components in contact with the low energy hydrogen reactive plasma, one or more of which may include the battery area. In one embodiment, a heat exchanger, such as a heat exchanger containing a flowing coolant, may include a plurality of heat exchangers organized in cell zones to maintain corresponding cell zones at individually desired temperatures .

在實施例(諸如圖28中所示之實施例)中,SunCell®包含在熔融鎵位準處緊固於反應單元腔室5b31內部上之熱絕緣件或襯墊5b31a以防止熱鎵直接接觸腔室壁。熱絕緣件可包含熱絕緣體、電絕緣體及對由諸如鎵之熔融金屬潤濕具有抗性的材料中之至少一者。絕緣件可進行以下中之至少一者:允許鎵之表面溫度增加及減少可熔融壁之反應單元腔室的壁上的局部熱點之形成。另外,氫解離劑,諸如本發明之氫解離劑可包覆於襯墊之表面上。在另一實施例中,壁厚度中之至少一者增大,且諸如銅塊之熱擴散器包覆於壁之外表面上以在壁內擴散熱功率以防止局部壁熔融。熱絕緣件可包含諸如BN、SiC、碳、富鋁紅柱石、石英、熔融矽石、氧化鋁、氧化鋯、氧化鉿之陶瓷,本發明之其他陶瓷及熟習此項技術者已知的陶瓷。絕緣件之厚度可經選擇以達成熔融金屬及氧化鎵表面塗層之所要面積,其中較小面積可藉由低能量氫反應電漿之濃度而升高溫度。因為較小面積可降低電子-離子再結合速率,所以面積可經最佳化以促進氧化鎵膜之消除,同時最佳化低能量氫反應功率。在包含矩形反應單元腔室之例示性實施例中,矩形BN區塊栓固至螺紋螺柱上,該等螺紋螺柱在熔融鎵之表面之位準處焊接至反應單元腔室之內壁。BN區塊在反應單元腔室內部上的此位置處形成連續升高表面。In an embodiment, such as the embodiment shown in Figure 28, SunCell® includes thermal insulation or gasket 5b31a fastened to the interior of reaction cell chamber 5b31 at the molten gallium level to prevent direct contact of the thermal gallium with the chamber chamber wall. The thermal insulator can include at least one of a thermal insulator, an electrical insulator, and a material that is resistant to wetting by a molten metal such as gallium. The insulation may at least one of: allow the surface temperature of the gallium to increase and reduce the formation of localized hot spots on the walls of the reaction cell chamber of the meltable wall. Additionally, a hydrogen dissociation agent, such as the hydrogen dissociation agent of the present invention, can be coated on the surface of the liner. In another embodiment, at least one of the wall thicknesses is increased, and a heat spreader, such as a copper block, is clad on the outer surface of the wall to spread thermal power within the wall to prevent localized wall melting. Thermal insulators may comprise ceramics such as BN, SiC, carbon, mullite, quartz, fused silica, alumina, zirconia, hafnium oxide, other ceramics of the present invention and those known to those skilled in the art. The thickness of the insulator can be selected to achieve the desired area of molten metal and gallium oxide surface coating, where a smaller area can be elevated in temperature by the concentration of the low energy hydrogen reactive plasma. Since the smaller area can reduce the electron-ion recombination rate, the area can be optimized to facilitate elimination of the gallium oxide film while optimizing the low energy hydrogen reaction power. In an exemplary embodiment comprising a rectangular reaction cell chamber, the rectangular BN blocks are bolted to threaded studs welded to the inner wall of the reaction cell chamber at the level of the surface of the molten gallium. The BN block forms a continuous raised surface at this location on the interior of the reaction unit chamber.

在實施例(圖23及圖28)中,SunCell®包含穿過在儲集器5c之底部處的EM泵之底板的匯流條5k2ka1。匯流條可連接至點火電流電源供應器。匯流條可延伸於熔融金屬位準上方。除諸如鎵之熔融金屬以外,匯流條亦可充當正電極。熔融金屬可使匯流條散熱以使其冷卻。匯流條可包含耐火金屬,其在熔融金屬包含鎵之情況下不與熔融金屬(諸如W、Ta或Re)形成合金。匯流條(諸如自鎵表面突出之W棒)可在鎵表面處濃縮電漿。噴射器噴嘴(諸如包含W之噴射器噴嘴)可浸沒於儲集器中之熔融金屬中以保護噴射器噴嘴免受熱損害。In an embodiment (FIGS. 23 and 28), SunCell® includes bus bars 5k2ka1 that pass through the bottom plate of the EM pump at the bottom of reservoir 5c. The bus bars can be connected to the ignition current power supply. The bus bars may extend above the molten metal level. In addition to molten metals such as gallium, bus bars can also act as positive electrodes. The molten metal dissipates heat from the bus bar to cool it. The bus bar may comprise a refractory metal that does not form an alloy with a molten metal such as W, Ta, or Re if the molten metal contains gallium. Bus bars, such as W rods protruding from the gallium surface, can concentrate the plasma at the gallium surface. Ejector nozzles, such as those containing W, may be submerged in molten metal in a reservoir to protect the ejector nozzles from thermal damage.

在實施例(圖23)中,諸如其中熔融金屬充當電極之實施例,充當熔融電極之橫截面積可經最小化以增加電流密度。熔融金屬電極可包含噴射器電極。可浸沒噴嘴。熔融金屬電極可為正極性。熔融金屬電極之面積可為約相對電極之面積。熔融金屬表面之面積可經最小化以充當具有高電流密度之電極。面積可在約1 cm2 至100 cm2 、1 cm2 至50 cm2 及1 cm2 至20 cm2 之至少一個範圍內。反應單元腔室及儲集器中之至少一者可在熔融金屬位準處逐漸變窄為較小橫截面積。反應單元腔室及儲集器中之至少一者之至少一部分在熔融金屬之位準處可包含耐火材料,諸如鎢、鉭或陶瓷,諸如BN。在例示性實施例中,可最小化熔融金屬位準處之反應單元腔室及儲集器中之至少一者的面積以充當具有高電流密度之正電極。在例示性實施例中,反應單元腔室可為圓柱形的且可進一步包含還原劑、圓錐形區段或至儲集器之過渡區,其中諸如鎵之熔融金屬填充儲集器至一位準,使得對應熔融金屬表面處之鎵橫截面積較小以集中電流且增大電流密度。在例示性實施例(圖29A)中,反應單元腔室及儲集器中之至少一者可包含一個薄片之沙漏形狀或雙曲面,其中熔融金屬位準約為最小橫截面積之位準。此區域可包含耐火材料或包含耐火材料(諸如碳)、耐火金屬(諸如W、Ta或Re)或陶瓷(諸如BN、SiC或石英)之襯墊5b31a。在例示性實施例中,反應單元腔室可包含諸如347 SS之不鏽鋼(諸如4130合金SS)且襯墊可包含W或BN。在一實施例中,反應單元腔室包含至少一個電漿約束結構,諸如以電極之間的軸線為中心之環圈,以約束環之內部之電漿。該等環可進行以下中之至少一者:與熔融金屬及反應單元腔室之壁短接及藉由至少一個電絕緣載體電隔離。In embodiments (FIG. 23), such as those in which the molten metal acts as the electrode, the cross-sectional area acting as the molten electrode may be minimized to increase current density. The molten metal electrode may comprise an injector electrode. Submersible nozzles. The molten metal electrode may be positive polarity. The area of the molten metal electrode may be approximately the area of the opposing electrode. The area of the molten metal surface can be minimized to act as an electrode with high current density. The area may be in the range of at least one of about 1 cm 2 to 100 cm 2 , 1 cm 2 to 50 cm 2 , and 1 cm 2 to 20 cm 2 . At least one of the reaction unit chamber and the reservoir can taper to a smaller cross-sectional area at the molten metal level. At least a portion of at least one of the reaction unit chamber and the reservoir may comprise a refractory material, such as tungsten, tantalum, or a ceramic, such as BN, at the level of the molten metal. In an exemplary embodiment, the area of at least one of the reaction cell chamber and the reservoir at the molten metal level can be minimized to act as a positive electrode with high current density. In an exemplary embodiment, the reaction unit chamber may be cylindrical and may further comprise a reducing agent, a conical section, or a transition region to a reservoir where molten metal such as gallium fills the reservoir to a level , making the gallium cross-sectional area corresponding to the molten metal surface smaller to concentrate the current and increase the current density. In an exemplary embodiment (FIG. 29A), at least one of the reaction cell chamber and the reservoir may comprise an hourglass shape or hyperboloid of a sheet, with the molten metal level being about the level of the smallest cross-sectional area. This region may comprise a refractory material or a liner 5b31a comprising a refractory material such as carbon, a refractory metal such as W, Ta or Re, or a ceramic such as BN, SiC or quartz. In an exemplary embodiment, the reaction cell chamber may comprise stainless steel such as 347 SS (such as 4130 alloy SS) and the gasket may comprise W or BN. In one embodiment, the reaction cell chamber contains at least one plasma confinement structure, such as a ring centered on the axis between the electrodes, to confine the plasma inside the ring. The rings may be at least one of shorted to the molten metal and walls of the reaction cell chamber and electrically isolated by at least one electrically insulating carrier.

反應池或腔室構型 在一實施例中,反應單元腔室可包含管反應器(圖29B-C),諸如包含具有真空或高壓能力之不鏽鋼管容器5b3的管反應器。容器內部之壓力及反應混合物可藉由使氣體流經氣體入口710且經由真空管線711抽空氣體來控制。反應單元腔室5b31可包含襯墊5b31a,諸如耐火襯墊,諸如陶瓷襯墊,諸如包含BN、石英、熱解碳或SiC之襯墊,該耐火襯墊可電隔離反應單元腔室5b31與容器5b3壁,且可進一步防止鎵合金形成。替代地,耐火金屬襯墊(諸如W、Ta或Re)可減少鎵合金形成。EM匯流條5k2可包含導電且阻止鎵合金形成之材料、塗層或包層。例示性材料為Ta、Re、Mo、W及Ir。每一匯流條5k2可藉由焊接件或緊固件(諸如接頭套管)緊固至EM泵管,該焊接件或緊固件可包含包含陶瓷或抗鎵合金金屬(諸如Ta、Re、Mo、W及Ir中之至少一者)之塗層。 Reaction Cell or Chamber Configuration In one embodiment, the reaction unit chamber may comprise a tube reactor (FIGS. 29B-C), such as a tube reactor comprising a stainless steel tube vessel 5b3 with vacuum or high pressure capability. The pressure inside the vessel and the reaction mixture can be controlled by flowing gas through gas inlet 710 and evacuating the gas through vacuum line 711 . The reaction unit chamber 5b31 may contain a liner 5b31a, such as a refractory liner, such as a ceramic liner, such as a liner containing BN, quartz, pyrolytic carbon or SiC, which can electrically isolate the reaction unit chamber 5b31 from the vessel 5b3 wall, and can further prevent gallium alloy formation. Alternatively, a refractory metal liner such as W, Ta or Re may reduce gallium alloy formation. The EM bus bar 5k2 may include a material, coating or cladding that conducts electricity and prevents the formation of gallium alloys. Exemplary materials are Ta, Re, Mo, W and Ir. Each bus bar 5k2 may be fastened to the EM pump tube by welds or fasteners (such as joint sleeves), which may include ceramic or anti-gallium alloy metals such as Ta, Re, Mo, W and at least one of Ir) coating.

在一實施例中,襯墊(例如EM泵之襯墊、反應池襯墊)包含複數種材料(諸如複數種陶瓷或陶瓷及耐火金屬)之混合。陶瓷可為本發明之陶瓷,諸如BN、石英、氧化鋁、氧化鋯、氧化鉿,或諸如Ta、W、Re、Ti、Zr或Hf之二硼化物或碳化物,諸如ZrB2 、TaC、HfC及WC。耐火金屬可為本發明之耐火金屬,諸如W、Ta、Re、Ir或Mo。在管狀電池之例示性實施例(圖29B-C)中,襯墊包含在電漿最強之區域處具有凹陷帶之BN管,其中直徑略微大於BN管襯墊之直徑的W管區段保持在BN襯墊之凹陷帶中。在例示性實施例中,耐火金屬管形反應單元腔室5b31之襯墊,諸如包含鈮或釩且塗佈有陶瓷(諸如鋯鈦釔氧化物(ZTY))以防止氧化的襯墊包含內部BN管,其在所要位置處,諸如在電漿歸因於低能量氫反應而最強的位置處具有至少一種耐火金屬或陶瓷嵌體,諸如W嵌體。In one embodiment, the liners (eg, liners of EM pumps, reaction cell liners) comprise a plurality of materials such as a plurality of ceramics or a mixture of ceramics and refractory metals. The present invention may be ceramic ceramic, such as BN, silica, alumina, zirconium oxide, hafnium oxide, or such as Ta, W, Re, Ti, Zr or Hf bis borides or carbides, such as ZrB 2, TaC, HfC and WC. The refractory metal may be the refractory metal of the present invention, such as W, Ta, Re, Ir or Mo. In the exemplary embodiment of the tubular cell (FIGS. 29B-C), the liner comprises a BN tube with a concave band at the region where the plasma is strongest, with a section of the W tube with a diameter slightly larger than the diameter of the BN tube liner remaining in the BN in the recessed strip of the pad. In an exemplary embodiment, a liner of refractory metal tubular reaction cell chamber 5b31, such as a liner containing niobium or vanadium and coated with a ceramic such as zirconium titanium yttrium oxide (ZTY) to prevent oxidation, contains internal BN A tube having at least one refractory metal or ceramic inlay, such as a W inlay, at a desired location, such as where the plasma is strongest due to low energy hydrogen reactions.

在一實施例中,至少一個SunCell®組件(諸如儲集器、反應單元腔室及EM泵管)之陶瓷襯套、塗層或包層可包含以下各者中之至少一者:金屬氧化物、氧化鋁、氧化鋯、氧化釔穩定化之氧化鋯、氧化鎂、氧化鉿、碳化矽、碳化鋯、二硼化鋯、氮化矽(Si3 N4 )、玻璃陶瓷(諸如Li2 O×Al2 O3 ×n SiO2 系統(LAS系統)、MgO×Al2 O3 ×n SiO2 系統(MAS系統)、ZnO×Al2 O3 ×n SiO2 系統(ZAS系統))。至少一個SunCell®組件(諸如儲集器、反應單元腔室、EM泵管、襯墊、包層或塗層)可包含耐火材料,諸如以下中之至少一者:石墨(昇華點=3642℃);耐火金屬(諸如鎢(熔點=3422℃)或鉭(熔點=3020℃)、鈮、鈮合金、釩、陶瓷、超高溫陶瓷);及陶瓷基質複合物,諸如硼化物、碳化物、氮化物及氧化物中之至少一者,諸如早期過渡金屬(諸如硼化鉿(HfB2 )、二硼化鋯(ZrB2 )、氮化鉿(HfN)、氮化鋯(ZrN)、碳化鈦(TiC)、氮化鈦(TiN)、二氧化釷(ThO2 )、硼化鈮(NbB2 )及碳化鉭(TaC)及其相關聯複合物)。具有所需高熔點之例示性陶瓷為氧化鎂(MgO) (熔點=2852℃)、氧化鋯(ZrO) (熔點=2715℃)、氮化硼(BN) (熔點=2973℃)、二氧化鋯(ZrO2 ) (熔點=2715℃)、硼化鉿(HfB2 ) (熔點=3380℃)、碳化鉿(HfC) (熔點=3900℃)、Ta4 HfC5 (熔點=4000℃)、Ta4 HfC5 TaX4 HfCX5 (4215℃)、氮化鉿(HfN) (熔點=3385℃)、二硼化鋯(ZrB2 ) (熔點=3246℃)、碳化鋯(ZrC) (熔點=3400℃)、氮化鋯(ZrN) (熔點=2950℃)、硼化鈦(TiB2 ) (熔點=3225℃)、碳化鈦(TiC) (熔點=3100℃)、氮化鈦(TiN) (熔點=2950℃)、碳化矽(SiC) (熔點=2820℃)、硼化鉭(TaB2 ) (熔點=3040℃)、碳化鉭(TaC) (熔點=3800℃)、氮化鉭(TaN) (熔點=2700℃)、碳化鈮(NbC) (熔點=3490℃)、氮化鈮(NbN) (熔點=2573℃)、碳化釩(VC) (熔點=2810℃)及氮化釩(VN) (熔點=2050℃),以及渦輪機葉片材料,諸如來自包含鉻、鈷及錸之超合金、基於鎳之超合金之群組的一或多者,其包含陶瓷基質複合物U-500、Rene 77、Rene N5、Rene N6、PWA 1484、CMSX-4、CMSX-10、英高鎳(Inconel)、IN-738、GTD-111、EPM-102及PWA 1497。諸如MgO及ZrO之陶瓷可對與H2 反應具有抗性。In one embodiment, the ceramic liner, coating, or cladding of at least one SunCell® component, such as the reservoir, reaction cell chamber, and EM pump tubing, may comprise at least one of the following: a metal oxide , alumina, zirconia, yttria-stabilized zirconia, magnesia, hafnium oxide, silicon carbide, zirconium carbide, zirconium diboride, silicon nitride (Si 3 N 4 ), glass ceramics (such as Li 2 O x Al 2 O 3 × n SiO 2 system (LAS system), MgO×Al 2 O 3 × n SiO 2 system (MAS system), ZnO×Al 2 O 3 × n SiO 2 system (ZAS system)). At least one SunCell® component (such as a reservoir, reaction cell chamber, EM pump tube, liner, cladding, or coating) may comprise a refractory material, such as at least one of the following: Graphite (sublimation point = 3642°C) ; refractory metals (such as tungsten (melting point=3422°C) or tantalum (melting point=3020°C), niobium, niobium alloys, vanadium, ceramics, ultra-high temperature ceramics); and ceramic matrix composites such as borides, carbides, nitrides and at least one of oxides such as early transition metals such as hafnium boride (HfB 2 ), zirconium diboride (ZrB 2 ), hafnium nitride (HfN), zirconium nitride (ZrN), titanium carbide (TiC ), titanium nitride (TiN), thorium dioxide (ThO 2 ), niobium boride (NbB 2 ), and tantalum carbide (TaC) and their associated composites). Exemplary ceramics with the desired high melting point are magnesium oxide (MgO) (melting point=2852°C), zirconia (ZrO) (melting point=2715°C), boron nitride (BN) (melting point=2973°C), zirconium dioxide (ZrO 2 ) (melting point=2715°C), hafnium boride (HfB 2 ) (melting point=3380°C), hafnium carbide (HfC) (melting point=3900°C), Ta 4 HfC 5 (melting point=4000° C), Ta 4 HfC 5 TaX 4 HfCX 5 (4215°C), Hafnium Nitride (HfN) (melting point=3385°C), Zirconium Diboride (ZrB 2 ) (melting point=3246°C), Zirconium Carbide (ZrC) (melting point=3400°C) , zirconium nitride (ZrN) (melting point=2950℃), titanium boride (TiB 2 ) (melting point=3225℃), titanium carbide (TiC) (melting point=3100℃), titanium nitride (TiN) (melting point=2950 ℃), silicon carbide (SiC) (melting point=2820℃), tantalum boride (TaB 2 ) (melting point=3040℃), tantalum carbide (TaC) (melting point=3800℃), tantalum nitride (TaN) (melting point=3800℃) 2700℃), niobium carbide (NbC) (melting point=3490℃), niobium nitride (NbN) (melting point=2573℃), vanadium carbide (VC) (melting point=2810℃) and vanadium nitride (VN) (melting point= 2050°C), and turbine blade materials such as one or more from the group of superalloys comprising chromium, cobalt and rhenium, nickel-based superalloys comprising ceramic matrix composites U-500, Rene 77, Rene N5 , Rene N6, PWA 1484, CMSX-4, CMSX-10, Inconel, IN-738, GTD-111, EPM-102 and PWA 1497. Such as MgO and ZrO of ceramic may be resistant to reaction with H 2.

在一實施例中,每一儲集器5c、反應單元腔室5b31及EM泵管5k6之內部中之至少一者塗佈有陶瓷或包含陶瓷襯墊,諸如以下中之一者:BN、石英、碳、熱解碳、碳化矽、二氧化鈦、氧化鋁、氧化釔、氧化鉿、氧化鋯或諸如TiO2 -Yr2 O3 -Al2 O3 之混合物或本發明之另一者。例示性碳塗層包含Aremco產品石墨鍵551RN且例示性氧化鋁塗層包含Cotronics Resbond 989。在一實施例中,襯墊包含至少兩個同心蛤殼,諸如兩個BN蛤殼襯墊。蛤殼之豎直接縫(平行於儲集器)可按相對旋轉角度偏移或交錯以避免自反應單元腔室內部之電漿或熔融金屬至反應單元腔室壁的直接電路徑。在例示性實施例中,偏移在豎直縫隙處為90°,其中蛤殼的兩個區段准許襯墊熱膨脹而不破裂,且重疊的內襯及外襯防止電漿歸因於同心蛤殼襯墊之接縫集的相對偏移而與反應腔室壁電短接。另一例示性實施例包含蛤殼內襯及完整外襯,諸如BN蛤殼內襯及碳或陶瓷管外襯。在複數個同心襯墊之另一實施例中,至少內襯包含豎直堆疊區段。在外襯亦包含豎直堆疊區段的情況下,內襯之水平接縫可由外襯覆蓋,其中內襯之接縫與外襯之接縫處於不同豎直高度。所得的接縫偏移防止了反應單元腔室內部之熔融金屬及電漿中之至少一者與反應單元腔室壁之間的電短接。In one embodiment, at least one of the interior of each reservoir 5c, reaction cell chamber 5b31, and EM pump tube 5k6 is coated with a ceramic or includes a ceramic liner, such as one of the following: BN, quartz , carbon, pyrolytic carbon, silicon carbide, titanium oxide, aluminum oxide, yttrium oxide, hafnium oxide, zirconium oxide, or mixtures, such as TiO 2 -Yr 2 O 3 -Al 2 O 3 or the other of the present invention. Exemplary carbon coatings include Aremco Products Graphite Bonds 551RN and exemplary alumina coatings include Cotronics Resbond 989. In one embodiment, the liner comprises at least two concentric clamshells, such as two BN clamshell liners. The vertical seams of the clamshell (parallel to the reservoir) can be offset or staggered by relative rotation angles to avoid a direct electrical path from the plasma or molten metal inside the reaction unit chamber to the reaction unit chamber walls. In an exemplary embodiment, the offset is 90° at the vertical slit, where the two sections of the clamshell allow thermal expansion of the liner without cracking, and the overlapping inner and outer liners prevent plasma from being attributed to the concentric clams The relative offset of the seam set of the shell liner electrically shorts the wall of the reaction chamber. Another exemplary embodiment includes a clamshell liner and a complete outer liner, such as a BN clamshell liner and a carbon or ceramic tube outer liner. In another embodiment of the plurality of concentric liners, at least the inner liners comprise vertically stacked sections. Where the outer liner also includes vertically stacked sections, the horizontal seams of the inner liner may be covered by the outer liner, wherein the seams of the inner liner are at different vertical heights than the seams of the outer liner. The resulting seam offset prevents electrical shorting between at least one of the molten metal and plasma inside the reaction unit chamber and the reaction unit chamber walls.

該襯墊包含能夠進行高溫操作且具有良好熱衝擊抗性之電絕緣體。亦需要可加工性、提供熱絕緣之能力及對與低能量氫反應物及熔融金屬之反應性之抗性。例示性內襯材料為BN、AlN、Sialon及Shapal中之至少一者。氮化矽(Si3 N4 )、碳化矽、Sialon、富鋁紅柱石及Macor可為BN內襯提供周向熱絕緣。襯墊可包含多孔類型之襯墊材料,諸如多孔Sialon。其他例示性襯墊包含具有Ta或W嵌體之SiC-碳玻璃化石墨或內BN襯墊中之至少一者以保護其免受低能量氫電漿、熱解碳、SiC-C複合物、氮化矽鍵結之碳化矽、氧化釔穩定化之氧化鋯、具有Ta或W嵌體之SiC的影響。該襯墊可經水平地及豎直地分段中之至少一者以減少熱衝擊。內襯組件(諸如反應單元腔室5b31及儲集器5c中之至少一者)可以避免襯墊(諸如SiC襯墊)之襯墊熱衝擊(例如,由電漿加熱產生之衝擊太快而不能在引起故障之襯墊中產生熱梯度及基於差脹之應力)的速率斜升溫度。溫度斜升率可在約1℃/分鐘至200℃/秒範圍內。分段式區段可藉由諸如搭接或舌片及凹槽之並列區段上之結構特徵而互鎖。在一實施例中,互鎖各自包含電絕緣體之區段防止電漿電短接至反應單元腔室壁5b31。在另一實施例中,襯墊可包含多孔陶瓷,諸如多孔SiC、MgO、耐火磚、ZrO2 、HfO2 及Al2 O3 以避免熱衝擊。襯墊可包含複數個同心襯墊材料或堆疊,襯墊材料組合地提供襯墊之所要性質。最內層可具有高溫下之化學鈍性、高熱衝擊抗性及高溫可操作能力。外部層可在其操作溫度下提供電絕緣及熱絕緣及對反應性之抗性。在例示性實施例中,石英在低於約700℃下操作以避免與鎵至氧化鎵反應。待測試之例示性同心襯墊堆疊自內部至外部為:BN-SiC-Si3N4,其中石英、SiC、塗佈有SiC之石墨或SiC-C複合物可替代Si3N4,且AlN、Sialon或Shapal可替代BN或SiC。The gasket contains an electrical insulator capable of high temperature operation and good thermal shock resistance. Processability, the ability to provide thermal insulation, and resistance to reactivity with low energy hydrogen reactants and molten metals are also required. Exemplary liner materials are at least one of BN, AlN, Sialon, and Shapal. Silicon nitride (Si 3 N 4 ), silicon carbide, Sialon, mullite and Macor can provide circumferential thermal insulation for BN linings. The gasket may comprise a porous type of gasket material, such as porous Sialon. Other exemplary liners include at least one of SiC-carbon vitrified graphite or inner BN liners with Ta or W inlays to protect them from low energy hydrogen plasma, pyrolytic carbon, SiC-C composites, Influence of silicon carbide bonded by silicon nitride, zirconia stabilized by yttria, SiC with Ta or W inlays. The liner can be at least one of horizontally and vertically segmented to reduce thermal shock. Liner components, such as at least one of reaction cell chamber 5b31 and reservoir 5c, can avoid liner thermal shock (eg, shock caused by plasma heating too fast to The rate at which thermal gradients and differential expansion-based stresses are created in the failure-causing gasket. The temperature ramp rate may range from about 1°C/min to 200°C/sec. The segmented sections can be interlocked by structural features on the juxtaposed sections such as laps or tongues and grooves. In one embodiment, the interlocking segments each comprising an electrical insulator prevent the plasma from electrically shorting to the reaction cell chamber wall 5b31. In another embodiment, the gasket may comprise a porous ceramic, such as porous SiC, MgO, refractory bricks, ZrO 2, HfO 2 and Al 2 O 3 in order to avoid thermal shock. The gasket may comprise a plurality of concentric gasket materials or stacks that in combination provide the desired properties of the gasket. The innermost layer may have chemical passivation at high temperatures, high thermal shock resistance, and high temperature operability. The outer layer can provide electrical and thermal insulation and resistance to reactivity at its operating temperature. In an exemplary embodiment, the quartz is operated below about 700°C to avoid reaction with gallium to gallium oxide. Exemplary concentric liner stacks to be tested are from inside to outside: BN-SiC-Si3N4, where quartz, SiC, SiC-coated graphite, or SiC-C composite can be substituted for Si3N4, and AlN, Sialon, or Shapal can be substituted BN or SiC.

在一實施例中,襯墊可包含對於反應單元腔室5b31為圓周的殼體。殼體之壁可包含本發明之陶瓷或經塗佈或包覆金屬。該殼體可填充有熱穩定熱絕緣體。在例示性實施例中,殼體包含雙壁BN管襯墊,其包含在兩個管之間具有間隙且在間隙之頂部及底部處具有BN端板密封件以形成空腔之內及外BN管,其中該空腔可填充有矽膠或諸如內部石英管之其他具有高溫能力的熱絕緣體。In one embodiment, the gasket may comprise a shell that is circumferential to the reaction unit chamber 5b31. The walls of the housing may comprise the ceramic of the present invention or a coated or clad metal. The housing may be filled with a thermally stable thermal insulator. In an exemplary embodiment, the housing includes a double-walled BN tube gasket that includes inner and outer BN with a gap between the two tubes and BN end plate seals at the top and bottom of the gap to form the cavity tube, wherein the cavity may be filled with silicone or other thermal insulator with high temperature capability such as an inner quartz tube.

在包含複數個同心襯墊之一實施例中,至少一個外同心襯墊可(i)充當散熱片及(ii)自並列內襯移除熱中之至少一者。外襯可包含具有高熱傳遞係數之材料,諸如BN或SiC。在例示性實施例中,最內部襯墊可包含可經分段之BN,且對應的外襯可包含SiC,該SiC可經分段及堆疊使得最內部襯墊及外襯區段之接縫偏移或交錯。In one embodiment including a plurality of concentric liners, at least one outer concentric liner can at least one of (i) act as a heat sink and (ii) remove heat from the side-by-side liners. The outer liner may comprise a material with a high heat transfer coefficient, such as BN or SiC. In an exemplary embodiment, the innermost liner may include BN, which may be segmented, and the corresponding outer liner may include SiC, which may be segmented and stacked such that the seam of the innermost liner and outer liner segments offset or staggered.

在一實施例中,歸因於將儲集器鎵與電極8之間的總壓力增大至無法形成電漿之點的鎵沸騰,反應單元腔室電漿可短接至反應單元腔室壁,而非連接至儲集器鎵表面。點火電壓可隨著壓力增大而增大,直至電阻經由至反應腔室壁之較低氣壓大宗氣體而降低為止。在一實施例中,可藉由在恆定點火電流下升高點火電壓來感測鎵汽化。控制器可降低點火功率、改變氣體壓力、降低再結合器之電漿功率,或回應於電壓升高而增加EM泵抽及鎵混合以減少汽化。在另一實施例中,控制器可進行以下中之至少一者:間歇性地施加點火電流以抑制鎵沸騰,其中可在點火關閉之情況下在工作循環之一部分期間保持低能量氫反應電漿;及引起氬氣自源流動至反應單元腔室中以藉由增加壓力來抑制鎵沸騰,同時避免H原子濃度降低。在實施例(諸如圖31A-B中所示之實施例)中,EM泵5kk包含複數個級或泵以增加熔融金屬攪拌,從而防止形成可沸騰之局部熱點。在圖31C中所示之實施例中,SunCell®可包含複數個EM泵總成5kk以及複數個熔融金屬噴射器5k61,各自具有對應相對電極8。在一實施例中,EM泵可經由複數個噴射電極5k61噴射熔融鎵至至少一個相對電極8。複數個電極對可增大電流,同時降低電漿電阻以增加低能量氫反應功率及增益。歸因於來自過量局部鎵表面加熱之鎵沸騰的高壓亦可減小。In one embodiment, the reaction cell chamber plasma may be shorted to the reaction cell chamber walls due to gallium boiling that increases the total pressure between the reservoir gallium and electrode 8 to the point where no plasma can form , rather than connecting to the reservoir gallium surface. The ignition voltage can be increased as the pressure increases until the resistance decreases through the lower pressure bulk gas to the reaction chamber walls. In one embodiment, gallium vaporization can be sensed by raising the ignition voltage at a constant ignition current. The controller can reduce the ignition power, change the gas pressure, reduce the plasma power of the recombiner, or increase the EM pumping and gallium mixing in response to a voltage increase to reduce vaporization. In another embodiment, the controller may perform at least one of intermittently applying an ignition current to suppress gallium boiling, wherein the low energy hydrogen reactive plasma may be maintained during a portion of the duty cycle with the ignition off ; and causing argon to flow from the source into the reaction cell chamber to suppress gallium boiling by increasing the pressure while avoiding a reduction in the concentration of H atoms. In an embodiment, such as the embodiment shown in Figures 31A-B, the EM pump 5kk includes multiple stages or pumps to increase molten metal agitation, thereby preventing the formation of localized hot spots that can boil. In the embodiment shown in FIG. 31C , the SunCell® may comprise a plurality of EM pump assemblies 5kk and a plurality of molten metal injectors 5k61 , each with a corresponding opposing electrode 8 . In one embodiment, the EM pump may spray molten gallium to at least one opposing electrode 8 via the plurality of spray electrodes 5k61. Multiple electrode pairs can increase current while reducing plasma resistance to increase low energy hydrogen reaction power and gain. The high pressure due to gallium boiling from excess local gallium surface heating can also be reduced.

真空管線711可包含含有諸如金屬毛絨(諸如SS毛絨)或具有較大表面積之諸如包含氧化鋁、矽酸鹽、氧化鋯、氧化鎂及氧化鉿中之至少一者的陶瓷纖維之材料的區段;但對於氣體而言為高度可擴散的。冷凝材料可冷凝鎵及氧化鎵,其可回流回至反應單元腔室中,同時允許藉由抽空移除諸如H2 、O2 、氬氣及H2 O之氣體。真空管線711可包含豎直區段以增強鎵及鎵產物至反應單元腔室5b31之回流。在一實施例中,鎵添加劑(諸如至少一種其他金屬、元素、化合物或材料)可添加至鎵中以防止沸騰。鎵添加劑可包含銀,其可進一步在反應單元腔室5b31中形成奈米粒子以減小電漿電阻並增大低能量氫功率增益。Vacuum line 711 may contain materials such as metal fleece (such as SS fleece) or ceramic fibers with larger surface areas such as ceramic fibers containing at least one of alumina, silicate, zirconia, magnesia, and hafnium oxide. segment; but highly diffusible for gases. Condensing condensable materials, gallium oxide and gallium oxide, which may be refluxed back to the reactor chamber unit, while allowing the removal by evacuation H 2, O 2, H 2 O and argon as the gas. Vacuum line 711 may include vertical sections to enhance the return of gallium and gallium product to reaction unit chamber 5b31. In one embodiment, a gallium additive, such as at least one other metal, element, compound or material, may be added to the gallium to prevent boiling. The gallium additive may include silver, which may further form nanoparticles in the reaction cell chamber 5b31 to reduce plasma resistance and increase low energy hydrogen power gain.

在實驗上,低能量氫反應功率在包含較小直徑反應單元腔室之SunCell®的情況下歸因於電漿電流密度、電漿密度及對應的電漿加熱效應之增加而增加。在輝光放電再結合器之創新的情況下,電漿濃度並非必需的,因為放電電漿產生高溫之效應,包括製備一定量之初生水,其可表徵為具有足以防止氫鍵形成之內部能量的水。在包含電漿再結合器(諸如輝光放電再結合器)之實施例中,藉由將襯墊與低能量氫電漿隔絕來避免對諸如BN襯墊之襯墊的損壞。為實現隔絕,襯墊可包含比產生類似功率之SunCell更大的直徑。在一實施例中,襯墊(諸如BN襯墊)接觸反應單元腔室壁以改良至外部水浴之熱傳遞,從而防止BN破裂。在一實施例中,襯墊可經分段且在最強電漿區(諸如熔融金屬表面與相對電極8之間的區)中包含複數種材料(諸如BN),且在其他區中進一步包含至少一種不同陶瓷(諸如SiC)之區段。此外,某些襯墊(諸如BN)可提供反應產物(諸如低能量氫)之提高的鈍性,以得到更高效的發電。Experimentally, the low energy hydrogen reaction power increased in the case of SunCell® containing smaller diameter reaction cell chambers due to increases in plasma current density, plasma density and corresponding plasma heating effect. In the case of the innovation of the glow discharge recombiner, plasma concentration is not necessary because of the high temperature effects of the discharge plasma, including the preparation of an amount of nascent water, which can be characterized as having sufficient internal energy to prevent hydrogen bond formation water. In embodiments including plasma recombiners, such as glow discharge recombiners, damage to pads such as BN pads is avoided by isolating the pads from the low energy hydrogen plasma. To achieve isolation, the pad may contain a larger diameter than a SunCell that produces similar power. In one embodiment, a liner, such as a BN liner, contacts the reaction cell chamber walls to improve heat transfer to the external water bath, thereby preventing BN cracking. In one embodiment, the liner may be segmented and contain a plurality of materials (such as BN) in the strongest plasma region (such as the region between the molten metal surface and the opposing electrode 8), and further contain at least A section of a different ceramic such as SiC. In addition, certain liners, such as BN, can provide increased passivation of reaction products, such as low energy hydrogen, for more efficient power generation.

最內部襯墊(諸如BN襯墊)之至少一個區段可包含諸如0.1 mm至10 cm厚之所要厚度以將熱至少自熔融金屬(諸如鎵)徑向地傳遞至外部散熱片(諸如水冷卻劑)。在一實施例中,襯墊(諸如BN襯墊)可與儲集器壁及反應腔室壁中之至少一者進行良好熱接觸。可選擇內襯之直徑以自反應單元腔室之中心充分地將其移除,以在所要程度上減少電漿損壞。直徑可在0.5 cm至100 cm範圍內。襯墊可為耐火金屬嵌體,諸如在電漿最強之區域中的W嵌體。在例示性實施例中,8 cm直徑BN襯墊與周向反應單元腔室及儲集器壁接觸,其中浸沒在熔融金屬中之襯墊部分包含穿孔以允許熔融金屬接觸儲集器壁以增加至儲集器壁及外部冷卻劑(諸如水或空氣冷卻劑)之熱傳遞。在另一例示性實施例中,內部對端堆疊之BN分段式襯墊包含熔融金屬位準下方之穿孔且外部同心襯墊包含具有在底部中切割之凹口的單件SiC圓柱體以允許徑向熔融金屬流動及熱傳遞。At least one section of the innermost liner (such as a BN liner) may comprise a desired thickness such as 0.1 mm to 10 cm thick to transfer heat at least radially from the molten metal (such as gallium) to an external heat sink (such as water cooling agent). In one embodiment, a liner, such as a BN liner, can make good thermal contact with at least one of the reservoir wall and the reaction chamber wall. The diameter of the liner can be selected to sufficiently remove it from the center of the reaction cell chamber to reduce plasma damage to the desired extent. Diameters can range from 0.5 cm to 100 cm. The liner may be a refractory metal inlay, such as a W inlay in areas where the plasma is strongest. In an exemplary embodiment, an 8 cm diameter BN gasket is in contact with the circumferential reaction cell chamber and the reservoir wall, wherein the portion of the gasket submerged in the molten metal includes perforations to allow the molten metal to contact the reservoir wall to increase the Heat transfer to reservoir walls and external coolant such as water or air coolant. In another exemplary embodiment, the inner end-to-end stacked BN segmented liner includes perforations below the molten metal level and the outer concentric liner includes a single piece SiC cylinder with notches cut in the bottom to allow Radial molten metal flow and heat transfer.

在一實施例中,內襯或外襯中之至少一者包含耐火金屬(諸如W或Ta),且另一者包含電絕緣體(諸如陶瓷,諸如BN),其中耐火金屬襯墊可藉由熱傳導及散熱中之至少一者耗散局部熱點。除藉由將熱傳遞遠離最內部襯墊表面來移除曝露於低能量氫反應電漿之最內部襯墊上的熱應力以外,低能量氫滲透率在具有高熱傳遞係數之襯墊及反應單元腔室材料(諸如Cr-Mo SS對比304 SS或BN對比Sialon)中可較高,這可藉由降低低能量氫產物抑制來增大低能量氫反應速率。包含同心襯墊及反應單元腔室壁組件以促進低能量氫產物滲透及熱傳遞至諸如水浴之外部冷卻劑的例示性SunCell®實施例包含BN最內部襯墊、對應SiC外部襯墊及同心Cr-Mo SS反應單元腔室壁,在同心組件之間具有良好熱接觸。在希望熱保留在反應單元腔室(諸如包含諸如熔融鎵至空氣熱交換器之熱交換器的反應單元腔室)中的實施例中,反應單元腔室可包含額外外部同心隔熱襯墊(諸如石英同心隔熱襯墊),且可進一步包含隔熱底座,諸如包含底部石英襯墊之隔熱底座。In one embodiment, at least one of the inner liner or outer liner comprises a refractory metal (such as W or Ta), and the other comprises an electrical insulator (such as a ceramic, such as BN), wherein the refractory metal liner can conduct heat by and at least one of heat dissipation dissipates the local hot spot. In addition to removing thermal stress on the innermost liner exposed to the low-energy hydrogen reactive plasma by transferring heat away from the innermost liner surface, the low energy hydrogen permeability is beneficial in liners and reaction cells with high heat transfer coefficients It can be higher in chamber materials such as Cr-Mo SS vs. 304 SS or BN vs. Sialon, which can increase the low-energy hydrogen reaction rate by reducing low-energy hydrogen product inhibition. Exemplary SunCell® embodiments that include concentric liners and reaction cell chamber wall components to facilitate low energy hydrogen product permeation and heat transfer to an external coolant such as a water bath include BN innermost liners, corresponding SiC outer liners, and concentric Cr -Mo SS reaction cell chamber walls with good thermal contact between concentric components. In embodiments where heat retention is desired in a reaction unit chamber, such as a reaction unit chamber containing a heat exchanger such as a molten gallium-to-air heat exchanger, the reaction unit chamber may contain an additional external concentric insulating liner ( such as a quartz concentric insulating liner), and may further include an insulating base, such as one that includes a bottom quartz liner.

在一實施例中,襯墊可包含耐火金屬,諸如對與鎵形成合金具有抗性之W、Ta、Mo或Nb中之至少一者。金屬襯墊可與電池壁接觸以增加至外部冷卻劑(諸如水)之熱傳遞。在一實施例中,自電極8之周向邊緣至反應單元腔室5b31壁之水平距離大於儲集器中之熔融金屬與電極8之間的豎直間隔,其中反應單元腔室及儲集器中之至少一者可視情況包含襯墊。在例示性實施例中,中心W電極8在直徑在約6至8吋範圍內之反應單元腔室中具有約1至1.5吋之直徑,其中W、Ta、Mo或Nb襯墊與反應單元腔室壁接觸。具有足以避免在壁與電極8之間形成放電之直徑的反應單元腔室可不包含用以改良跨越壁之熱傳遞及經由該壁之低能量氫擴散中之至少一者的襯墊以避免低能量氫產物抑制。在一實施例(諸如圖31A-B中所示之實施例)中,儲集器之一部分及反應單元腔室壁中之至少一者可置換為對鎵合金形成具有抗性之材料,諸如金屬,諸如Nb、Mo、Ta或W。與電池之其他組件(諸如反應單元腔室5b31壁及儲集器壁之剩餘部分)之接頭911可藉由焊接、銅焊或黏著劑(諸如膠)接合。該鍵可在與替換區段重疊之唇緣處。In one embodiment, the liner may comprise a refractory metal, such as at least one of W, Ta, Mo, or Nb, which is resistant to alloying with gallium. A metal gasket can be in contact with the cell walls to increase heat transfer to an external coolant, such as water. In one embodiment, the horizontal distance from the circumferential edge of the electrode 8 to the wall of the reaction unit chamber 5b31 is greater than the vertical separation between the molten metal in the reservoir and the electrode 8, wherein the reaction unit chamber and the reservoir At least one of them may optionally include a pad. In an exemplary embodiment, the central W electrode 8 has a diameter of about 1 to 1.5 inches in the reaction cell chamber having a diameter in the range of about 6 to 8 inches, where the W, Ta, Mo or Nb liner and the reaction cell chamber are wall contact. A reaction cell chamber having a diameter sufficient to avoid the formation of a discharge between the wall and electrode 8 may not include a liner to improve at least one of heat transfer across the wall and low energy hydrogen diffusion through the wall to avoid low energy Hydrogen product inhibition. In an embodiment, such as the embodiment shown in Figures 31A-B, at least one of a portion of the reservoir and the walls of the reaction cell chamber may be replaced with a material that is resistant to gallium alloy formation, such as a metal , such as Nb, Mo, Ta or W. The joints 911 to other components of the cell, such as the reaction cell chamber 5b31 wall and the remainder of the reservoir wall, may be joined by welding, brazing, or an adhesive such as glue. The key may be at the lip overlapping the replacement section.

在一實施例中,最內部襯墊可包含耐火材料中之至少一者,諸如包含W或Ta之耐火材料,及熔融金屬冷卻系統。熔融金屬冷卻系統可包含EM泵噴嘴,其將噴射熔融金屬(諸如鎵)之至少一部分引導至襯墊上以冷卻該熔融金屬。熔融金屬冷卻系統可包含複數個噴嘴,該等噴嘴將熔融金屬噴射至相對電極且進一步將熔融金屬噴射至襯墊之壁上以使其冷卻。在例示性實施例中,熔融金屬冷卻系統包含噴射器噴嘴,該噴射器噴嘴定位於儲集器之中心區域(諸如儲集器之中心或接近儲集器之中心)中,該噴嘴可浸沒於儲集器中所含有之熔融金屬中;及襯墊內部之環圈噴射器,其包含一系列孔隙或噴嘴以將環形噴霧噴射至襯墊之內表面上。中心噴射器及環圈噴射器可由同一EM泵或獨立EM泵供應。襯墊(諸如BN或SiC襯墊)可具有高熱傳遞係數。襯墊可與可冷卻以冷卻襯墊之反應單元腔室壁5b31緊密接觸。在例示性實施例中,反應單元腔室壁5b31可經水或空氣冷卻。In one embodiment, the innermost liner may comprise at least one of a refractory material, such as a refractory material comprising W or Ta, and a molten metal cooling system. The molten metal cooling system may include an EM pump nozzle that directs at least a portion of the sprayed molten metal, such as gallium, onto the pad to cool the molten metal. The molten metal cooling system may include a plurality of nozzles that spray molten metal to the opposing electrode and further spray molten metal onto the walls of the liner to cool it. In an exemplary embodiment, the molten metal cooling system includes an injector nozzle positioned in a central region of the reservoir, such as at or near the center of the reservoir, which nozzle may be submerged in the molten metal contained in the reservoir; and a ring injector inside the liner that contains a series of apertures or nozzles to spray an annular spray onto the inner surface of the liner. The center and ring injectors can be supplied by the same EM pump or by separate EM pumps. Liners, such as BN or SiC liners, can have high heat transfer coefficients. The liner can be in close contact with the reaction unit chamber wall 5b31 which can be cooled to cool the liner. In an exemplary embodiment, the reaction unit chamber wall 5b31 may be water or air cooled.

在一實施例中,諸如石英襯墊之襯墊藉由諸如鎵之熔融金屬冷卻。在一實施例中,SunCell®包含多噴嘴熔融金屬噴射器或多熔融金屬噴射器以藉由攪拌及在熔融金屬表面上分配反應物來擴散由低能量氫反應釋放之熱。多個噴嘴可分配反應功率以避免熔融金屬之局部過度汽化。In one embodiment, the liners such as quartz liners are cooled by molten metal such as gallium. In one embodiment, the SunCell® includes a multi-nozzle molten metal injector or multiple molten metal injectors to diffuse the heat released by the low energy hydrogen reaction by stirring and distributing the reactants on the surface of the molten metal. Multiple nozzles can distribute the reaction power to avoid localized over-vaporization of the molten metal.

在一實施例中,Ta、Re或W襯墊可包含包含壁之Ta、Re或W容器,諸如Ta、Re或W圓柱形管,焊接Ta、Re或W底板及至少一個緊固穿透組件,諸如以下各者中之至少一者:焊接Ta、Re或W EM泵管入口及噴射器出口、點火匯流條及熱電偶套管。在另一實施例中,容器可包含諸如SiC、BN、石英或本發明之另一陶瓷的陶瓷,其中容器可包含過渡至穿透組件之至少一個凸台,其中緊固件可包含墊片管接頭,諸如包含石墨墊片或本發明之另一者或膠,諸如陶瓷至金屬膠,諸如本發明之Resbond或Durabond的墊片管接頭。容器可具有開放頂部。該容器可容納於金屬殼層中,諸如不鏽鋼殼層。諸如點火匯流條之穿透件可藉由密封件(諸如接頭套管或殼體,諸如由凸緣及墊片形成之接頭套管或殼體)真空密封至不鏽鋼殼層。殼層可在頂部處密封。密封件可包含Conflat凸緣409e及底板409a(圖29A-C)。凸緣可用螺栓密封,螺栓可包含彈簧負載螺栓、圓盤彈簧墊圈或鎖定墊圈。容器襯墊可進一步包含內襯,諸如陶瓷襯墊,諸如至少一個同心BN或石英襯墊。包含Re之本發明之組分可包含塗佈有Re之其他金屬。In one embodiment, the Ta, Re or W liner may comprise a Ta, Re or W container comprising walls, such as a Ta, Re or W cylindrical tube, a welded Ta, Re or W base plate and at least one fastening penetration , such as at least one of: welded Ta, Re, or W EM pump tube inlets and injector outlets, ignition bus bars, and thermowells. In another embodiment, the vessel may comprise a ceramic such as SiC, BN, quartz, or another ceramic of the present invention, wherein the vessel may comprise at least one boss transitioning to the penetration assembly, wherein the fastener may comprise a gasket fitting , such as a gasketed pipe joint comprising a graphite gasket or another or a glue of the present invention, such as a ceramic to metal glue, such as the Resbond or Durabond of the present invention. The container can have an open top. The container can be housed in a metal shell, such as a stainless steel shell. Penetrations such as ignition bus bars can be vacuum sealed to the stainless steel shell by seals such as a joint sleeve or housing, such as a joint sleeve or housing formed from flanges and gaskets. The shell can be sealed at the top. The seal may include a Conflat flange 409e and a base plate 409a (FIGS. 29A-C). The flange can be sealed with bolts which can include spring loaded bolts, disc spring washers or lock washers. The container liner may further comprise an inner liner, such as a ceramic liner, such as at least one concentric BN or quartz liner. Components of the present invention comprising Re may comprise other metals coated with Re.

在一實施例中,襯墊5b31a可覆蓋反應單元腔室5b31及儲集器5c之所有壁。反應物氣體供應管線710及真空管線711中之至少一者可安裝於頂部凸緣409a(圖29B-C)上。可豎直地安裝真空管線以進一步充當金屬蒸氣或需要回流之另一冷凝液之冷凝器及回流器。SunCell®可包含阱,諸如真空管線上之阱。例示性阱可包含真空管線上之至少一個彎管以冷凝及回流汽化鎵。阱可藉由冷卻劑(諸如水)冷卻。襯墊可包含諸如底板、頂板或凸緣板及管本體區段或複數個堆疊本體區段之組件。組件可包含碳或陶瓷,諸如BN、石英、氧化鋁、氧化鎂、氧化鉿或本發明之另一陶瓷。該等組件可膠合在一起或與墊片管接頭接合。在例示性實施例中,組件包含膠合在一起之石英。替代地,該等組件包含包含石墨墊片管接頭之BN。In one embodiment, the gasket 5b31a may cover all walls of the reaction unit chamber 5b31 and the reservoir 5c. At least one of reactant gas supply line 710 and vacuum line 711 may be mounted on top flange 409a (FIGS. 29B-C). A vacuum line can be installed vertically to further act as a condenser and refluxer for metal vapor or another condensate that needs to be refluxed. SunCell® may contain traps, such as traps on vacuum lines. Exemplary traps may include at least one elbow on the vacuum line to condense and reflux the vaporized gallium. The trap may be cooled by a coolant such as water. The gasket may comprise components such as a bottom, top or flange plate and a tube body section or a plurality of stacked body sections. The component may comprise carbon or a ceramic, such as BN, quartz, alumina, magnesia, hafnium oxide, or another ceramic of the present invention. The components can be glued together or joined with gasketed fittings. In an exemplary embodiment, the assembly comprises quartz cemented together. Alternatively, the components include BN containing graphite gasket fittings.

在一實施例中,諸如鎵之熔融金屬的溫度可藉由熱電偶(諸如高溫熱電偶)監測,該熱電偶可進一步對與諸如鎵之熔融金屬形成合金具有抗性。熱電偶可包含W、Re或Ta或可包含保護鞘,諸如W、Re、Ta或陶瓷鞘。在一實施例中,底板可包含用於熱電偶之熱電偶套管,該熱電偶套管突出至熔融金屬中且保護熱電偶,其中熱傳遞糊狀物可用以在熱電偶與套管之間形成良好熱接觸。在例示性實施例中,Ta、Re或W熱電偶或Ta、Re或W管熱套管藉由接頭套管連接至儲集器之底板。替代地,熱電偶可插入於EM泵管,入口側中。In one embodiment, the temperature of a molten metal such as gallium can be monitored by a thermocouple, such as a high temperature thermocouple, which can be further resistant to alloying with molten metal such as gallium. Thermocouples may contain W, Re or Ta or may contain protective sheaths such as W, Re, Ta or ceramic sheaths. In one embodiment, the base plate may contain a thermowell for the thermocouple that protrudes into the molten metal and protects the thermocouple, wherein a heat transfer paste may be used between the thermocouple and the bushing Make good thermal contact. In an exemplary embodiment, a Ta, Re or W thermocouple or Ta, Re or W tube thermowell is connected to the bottom plate of the reservoir by a joint bushing. Alternatively, a thermocouple can be inserted into the EM pump tubing, inlet side.

管反應器(圖29A-C)之頂部可包含底座電極8,其具有覆蓋有電絕緣鞘5c2之饋通及匯流條10,其中饋通安裝於底板409a中,該底板藉由凸緣409e連接至容器5b3。容器之底部可包含具有至少一個熱電偶埠712之熔融金屬儲集器5c以監測熔融金屬溫度及噴射器電極,諸如具有噴嘴5q之EM泵噴射器電極5k61。EM泵5kk之入口可由入口螢幕5qa1覆蓋。EM泵管5k6可經分段或包含藉由諸如焊接之方式緊固在一起之複數個區段,其中分段式EM泵管包含材料或用諸如Ta、W、Re、Ir、Mo或對鎵合金形成或氧化具有抗性之陶瓷的材料內襯、塗佈或包覆。在一實施例中,可冷卻至頂部電極8之饋通,諸如水冷卻。點火電極水冷卻系統(圖31A-B)可包含入口909及出口水910冷卻管線。在另一實施例中,底板409a可包含支座以將饋通進一步自反應單元腔室5b31移動以便在操作期間使其冷卻。The top of the tube reactor (FIGS. 29A-C) may include a base electrode 8 with feedthroughs and bus bars 10 covered with an electrically insulating sheath 5c2, with the feedthroughs mounted in a base plate 409a connected by flanges 409e to container 5b3. The bottom of the vessel may include a molten metal reservoir 5c with at least one thermocouple port 712 to monitor molten metal temperature and an injector electrode such as an EM pump injector electrode 5k61 with a nozzle 5q. The inlet of the EM pump 5kk can be covered by the inlet screen 5qa1. The EM pump tube 5k6 may be segmented or comprise a plurality of segments fastened together by means such as welding, wherein the segmented EM pump tube comprises material or is made of materials such as Ta, W, Re, Ir, Mo or paragallium. Alloy forming or oxidizing resistant ceramic material lining, coating or cladding. In one embodiment, the feedthrough to the top electrode 8 may be cooled, such as by water cooling. The ignition electrode water cooling system (FIGS. 31A-B) may include inlet 909 and outlet water 910 cooling lines. In another embodiment, the bottom plate 409a may include a stand to move the feedthrough further from the reaction unit chamber 5b31 to allow it to cool during operation.

在一實施例中,襯墊可包含在區段之間具有楔形之較薄上部區段及較厚下部區段,使得襯墊在一或多個區域(諸如容納上部電極8之區域)處具有相對較大橫截面積,且在鎵之位準處具有較小橫截面積以增加鎵表面處之電流密度。頂部區段對比底部區段處的橫截面積之相對比率可在1.01倍至100倍範圍內。In one embodiment, the gasket may include a thinner upper section and a thicker lower section with a wedge between the sections, such that the gasket has at one or more regions, such as the region housing the upper electrode 8 . Relatively large cross-sectional area with smaller cross-sectional area at the gallium level to increase the current density at the gallium surface. The relative ratio of the cross-sectional areas at the top section to the bottom section may range from 1.01 times to 100 times.

在一實施例中,SunCell®可藉由諸如氣體(諸如空氣)或液體(諸如水)之介質冷卻。SunCell®可包含可將熱(例如反應單元腔室之熱)傳遞至氣體(諸如空氣)或液體(諸如水)之熱交換器。在一實施例中,熱交換器包含容納SunCell®或其熱部分(諸如反應單元腔室5b31)之封閉容器,諸如管。熱交換器可進一步包含使得水流過管之泵。可對該流加壓,使得可抑制蒸汽產生以增加熱傳遞速率。所得過熱水可流入蒸汽產生器中以形成蒸汽,且蒸汽可為蒸汽渦輪機供電。或者,蒸汽可用於加熱。In one embodiment, the SunCell® can be cooled by a medium such as a gas (such as air) or a liquid (such as water). SunCell® may include a heat exchanger that can transfer heat (eg, the heat of the reaction cell chamber) to a gas (such as air) or a liquid (such as water). In one embodiment, the heat exchanger comprises a closed vessel, such as a tube, containing the SunCell® or its thermal portion, such as the reaction cell chamber 5b31. The heat exchanger may further comprise a pump that causes water to flow through the tubes. The stream can be pressurized so that steam generation can be suppressed to increase the heat transfer rate. The resulting superheated water can flow into a steam generator to form steam, and the steam can power a steam turbine. Alternatively, steam can be used for heating.

在空氣冷卻熱交換器之實施例中,SunCell®熱交換器可包含熱外表面上之高表面積散熱片及用於在散熱片上方流動空氣以自SunCell®移除熱以用於加熱及發電應用之鼓風機或壓縮機。在另一空氣冷卻熱交換器實施例中,諸如鎵之熔融金屬藉由諸如5ka之EM泵且經由熱交換器在儲集器5c外部泵抽且接著泵抽回至封閉迴路中之儲集器5c。In an embodiment of an air-cooled heat exchanger, the SunCell® heat exchanger may include high surface area fins on the hot outer surface and for flowing air over the fins to remove heat from the SunCell® for heating and power generation applications the blower or compressor. In another air-cooled heat exchanger embodiment, molten metal such as gallium is pumped by an EM pump such as 5ka through the heat exchanger outside of reservoir 5c and then pumped back to the reservoir in a closed loop 5c.

在其中跨越反應單元腔室壁之熱傳遞係至少部分地藉由導電機制之實施例中,跨越壁至諸如空氣或水之冷卻劑的熱傳遞藉由以下各者中之至少一者增加:增加壁面積、減小壁厚度及選擇包含諸如鎳或不鏽鋼之材料的反應單元腔室壁,該材料諸如具有比諸如316不鏽鋼之替代方案高的熱導率的鉻鉬鋼。In embodiments in which heat transfer across the walls of the reaction unit chamber is at least partially by an electrical conduction mechanism, heat transfer across the walls to a coolant such as air or water is increased by at least one of: increasing Wall area, reduced wall thickness, and selection of reaction cell chamber walls comprising materials such as nickel or stainless steel, such as chrome molybdenum steel with higher thermal conductivity than alternatives such as 316 stainless steel.

在一實施例(圖29A-D)中,熱交換器可包含SunCell®儲集器5c、EM泵總成5kk及EM泵管5k6,其中在其入口與包含EM泵管匯流條5k2之區段之間的EM泵管區段經延伸以在諸如水浴、熔融金屬浴或熔融鹽浴之冷卻劑浴中達成至少一個迴路或線圈導管之所需面積。可自至少一個供應歧管饋入多個迴路或線圈,且可藉由至少一個收集器歧管收集熔融金屬流以返回至EM泵。迴路或線圈導管及歧管可包含對與諸如鎵之熔融金屬形成合金具有抗性之材料且具有高熱傳遞係數。例示性導管材料為Cr-Mo SS、鉭、鈮、鉬及鎢。導管可經塗佈或噴漆以防止腐蝕。在例示性實施例中,EM泵管及熱交換器導管包含塗佈有CrN之Ta、諸如富鋁紅柱石或ZTY之陶瓷,或防止被水腐蝕的諸如VHT FlameproofTM 之油漆,且EM泵匯流條5k2包含Ta。在另一例示性實施例中,EM泵管及熱交換器導管包含塗佈有CrN之Nb、諸如富鋁紅柱石或ZTY之陶瓷,或防止被水腐蝕的諸如VHT FlameproofTM 之油漆,且EM泵匯流條5k2包含Nb。In one embodiment (FIGS. 29A-D), the heat exchanger may include a SunCell® reservoir 5c, an EM pump assembly 5kk, and an EM pump tube 5k6 at its inlet and the section containing the EM pump tube bus bar 5k2 Sections of EM pump tubing in between are extended to achieve the desired area of at least one loop or coil conduit in a coolant bath such as a water bath, molten metal bath, or molten salt bath. Multiple loops or coils can be fed from at least one supply manifold, and the flow of molten metal can be collected by at least one collector manifold for return to the EM pump. The loop or coil conduits and manifolds may contain materials that are resistant to alloying with molten metals such as gallium and have high heat transfer coefficients. Exemplary conduit materials are Cr-Mo SS, tantalum, niobium, molybdenum, and tungsten. The conduits can be coated or painted to prevent corrosion. In an exemplary embodiment, the EM pump tubes and heat exchanger tubes comprise Ta coated with CrN, a ceramic such as mullite or ZTY, or a water-resistant paint such as VHT Flameproof™ , and the EM pumps converge Bar 5k2 contains Ta. In another exemplary embodiment, the EM pump tubes and heat exchanger tubes comprise Nb coated with CrN, a ceramic such as mullite or ZTY, or a water-resistant paint such as VHT Flameproof™ , and the EM The pump bus bar 5k2 contains Nb.

在一實施例中,SunCell®包含至少一種組件(諸如反應單元腔室及儲集器),其包含具有高熱傳遞係數、足夠薄壁及足夠大面積之壁金屬(諸如4130 CrMo SS、Nb、Ta、W或Mo)以向散熱片(諸如水浴)提供充足熱損失以在產生所需量之功率期間保持所需熔融金屬溫度。外部熱交換器可能並非必需的。壁厚度可在約0.05 mm至5 mm之範圍內。壁面積及厚度可使用浴自傳導熱傳遞等式計算,且需要熔融金屬溫度作為熱梯度。SunCell®之外表面可塗佈有油漆(諸如VHT FlameproofTM )、陶瓷(諸如富鋁紅柱石)或經電鍍耐腐蝕金屬(諸如SS、Ni或鉻)以防止被散熱片之冷卻劑(諸如水浴之水)腐蝕。In one embodiment, the SunCell® comprises at least one component (such as the reaction cell chamber and reservoir) comprising a wall metal (such as 4130 CrMo SS, Nb, Ta) having a high heat transfer coefficient, sufficiently thin walls and sufficiently large areas , W or Mo) to provide sufficient heat loss to a heat sink (such as a water bath) to maintain the desired molten metal temperature during the generation of the desired amount of power. An external heat exchanger may not be necessary. The wall thickness may be in the range of about 0.05 mm to 5 mm. Wall area and thickness can be calculated using the bath self-conduction heat transfer equation and require molten metal temperature as the thermal gradient. SunCell® exterior surfaces can be coated with paints (such as VHT Flameproof ), ceramics (such as mullite), or plated corrosion-resistant metals (such as SS, Ni, or chromium) to protect against finned coolants (such as water baths) water) corrosion.

導管中之流可藉由控制EM泵電流來控制。將電漿保持在穿過熱交換器及反應腔室噴射器兩者之熔融金屬流動速率之所要可調節範圍內的點火電壓可藉由控制噴嘴5q及相對電極8之間隔距離來控制。間隔距離可在約1 mm至10 cm之範圍內。熱交換器可進一步包含可控制導管冷卻射流及以下中之至少一者:(i)一或多個熱感測器;(ii)一或多個熔融金屬及冷卻劑流量感測器;及(iii)控制器。可藉由控制冷卻導管之射流進一步控制單迴路熱交換器至冷卻劑浴之熱傳遞。The flow in the conduit can be controlled by controlling the EM pump current. The firing voltage to maintain the plasma within the desired adjustable range of the molten metal flow rate through both the heat exchanger and the reaction chamber injector can be controlled by controlling the separation distance between the nozzles 5q and the opposing electrodes 8. The separation distance may be in the range of about 1 mm to 10 cm. The heat exchanger may further comprise a controllable conduit cooling jet and at least one of: (i) one or more thermal sensors; (ii) one or more molten metal and coolant flow sensors; and ( iii) Controller. Heat transfer from the single loop heat exchanger to the coolant bath can be further controlled by controlling the jets of the cooling conduits.

在另一實施例中,熱交換器可包含至少一個導管迴路或線圈及至少一個泵,諸如EM泵或機械熔融金屬泵,其與EM泵噴射總成5kk無關。在一實施例中,泵可定位於熔融金屬再循環流動路徑之冷側上以避免超過泵之最高操作溫度。在一實施例中,用於熔融金屬噴射及熱交換器再循環中之至少一者的EM泵可包含AC EM泵。AC EM泵可包含用於供應直流交流電至EM匯流條或感應電流線圈以及AC EM泵之電磁體共同的AC電源供應器,以使得電流及磁場同相產生具有高效率之一個方向上的勞侖茲泵抽力。In another embodiment, the heat exchanger may include at least one conduit loop or coil and at least one pump, such as an EM pump or a mechanical molten metal pump, independent of the EM pump injection assembly 5kk. In one embodiment, the pump may be positioned on the cold side of the molten metal recirculation flow path to avoid exceeding the maximum operating temperature of the pump. In one embodiment, the EM pump used for at least one of molten metal injection and heat exchanger recirculation may comprise an AC EM pump. The AC EM pump may include a common AC power supply for supplying DC alternating current to the EM busbars or induced current coils and the electromagnets of the AC EM pump so that the current and magnetic field are in phase to generate Lorentz in one direction with high efficiency pumping force.

諸如熔融鎵之熔融金屬溫度可保持在所需溫度(諸如小於合金形成之溫度的高溫)下。鎵溫度之控制可藉由控制以下各者中之至少一者來達成:EM泵電流,其改變熱交換器流動速率;熱交換器上之射流;水冷卻劑溫度;反應單元腔室熱絕緣之程度;反應單元腔室浸沒於水中之程度;反應物H2 流動速率;反應物O2 流動速率;再結合器電漿電壓及電流參數;以及點火功率。The temperature of the molten metal, such as molten gallium, can be maintained at a desired temperature, such as an elevated temperature that is less than the temperature at which the alloy is formed. Control of gallium temperature can be achieved by controlling at least one of: EM pump current, which changes heat exchanger flow rates; jets on heat exchangers; water coolant temperature; degree; means the reaction chamber was immersed in water to the extent of; the flow rate of the reactants H 2; O 2 reactant flow rate; recombination is a plasma voltage and current parameters; and an ignition power.

在一實施例中,噴嘴5q可以複數個噴嘴替換,或噴嘴可具有複數個開口,諸如簇射頭之開口以朝向相對電極自多個孔口分散所噴射鎵。此類構型可促進在較高熔融金屬噴射速率下形成電漿,諸如在與包含EM泵管及其入口及噴射出口之EM泵噴射系統串聯的熱交換器之單個迴路導管中保持高流動速率所需的熔融金屬噴射速率。In one embodiment, the nozzles 5q may be replaced by a plurality of nozzles, or the nozzles may have a plurality of openings, such as openings of a shower head, to disperse the sprayed gallium from the plurality of orifices toward the opposite electrode. Such a configuration can promote plasma formation at higher molten metal injection rates, such as maintaining high flow rates in a single loop conduit with a heat exchanger in series with an EM pump injection system comprising EM pump tubes and their inlets and injection outlets Desired molten metal injection rate.

熱交換器 在一實施例中,SunCell®包含渦輪機系統之熱源,諸如包含外部燃燒室類型之熱源,其中來自熱交換器之熱加熱來自渦輪壓縮機之空氣且替換來自燃燒之熱。熱交換器可定位於燃氣渦輪機內部以自壓縮機接收空氣,或其可在渦輪機外部,其中空氣自壓縮機跨越熱交換器導引且返回至燃氣渦輪機之燃燒區段中。熱交換器可包含嵌入於迫使空氣在其上流動之散熱片中之EM泵管。管道可具有蛇形或Z形捲繞模式。 Heat Exchanger In one embodiment, the SunCell® includes a heat source for a turbine system, such as a heat source of the type including an external combustor, where heat from the heat exchanger heats air from the turbo compressor and replaces heat from combustion. The heat exchanger may be positioned inside the gas turbine to receive air from the compressor, or it may be external to the turbine, where the air is directed from the compressor across the heat exchanger and returned into the combustion section of the gas turbine. The heat exchanger may include EM pump tubes embedded in fins that force air to flow over them. The pipe can have a serpentine or Z-coil pattern.

在一實施例中,SunCell®包含熱交換器,諸如氣冷或水冷熱交換器。在一實施例中,加熱器交換器可包含殼內管設計(圖29D-E)。加熱器交換器可包含複數個管801,熔融金屬(諸如熔融銀或熔融鎵)經由該等管自SunCell® 812循環。熱交換器可包含(i)熔融金屬儲集器(諸如儲集器5c),其包含自反應單元腔室5b31接收熱功率之熔融金屬(諸如熔融鎵或熔融銀);(ii)至少一個循環電磁泵810,其經由熱交換器將熔融金屬自SunCell®泵抽且返回至SunCell®;(iv)具有入口807及出口808之殼層806,其用於諸如空氣或水之外部冷卻劑之強制流動,其中隔板809可引導外部冷卻劑流動通過殼層,其中氣流可逆流至導管中之熔融鎵流;(v)在殼層806內部之至少一個通道或導管801,其用於在內部流動熔融金屬,其中外部冷卻劑流動通過殼層806且經由導管801以將熱自熔融金屬傳遞至外部冷卻劑;(v)熱交換器入口管線803及熱交換器出口管線804,其中循環泵在由熔融金屬儲集器5c、熱交換器及入口管線及出口管線形成之迴路中連接;(vi)冷卻劑泵或吹風機;以及(vii)感測器及控制系統以控制熔融金屬及冷卻劑之流動。熱交換器可進一步包含至少一個熱交換器歧管802及分配器805。入口歧管802可自循環EM泵810接收熱熔融金屬且將其分配至複數個通道或導管801。熔融金屬出口歧管802可經由分配器805接收熔融金屬、結合來自複數個導管之分散式流,且引導熔融金屬流至連接回至電池儲集器5c之熱交換器出口管線804。循環EM泵可經由熱交換器入口管線803泵抽熱鎵至熱交換器且經由出口管線804返回至電池儲集器5c。熱交換器可進一步包含外部冷卻劑入口807及出口808且可進一步包含隔板809以引導外部冷卻劑在熔融金屬導管801上方流動。該流可藉由外部冷卻劑吹風機或泵811(諸如鼓風機或壓縮機或水泵)產生。回應於來自至少一個感測器(諸如熱電偶及流動速率計)之輸入,SunCell®熔融金屬及外部冷卻劑穿過熱交換器之流動可藉由至少一個控制器及控制對應泵或吹風機之泵抽或吹風機速度的電腦控制。In one embodiment, the SunCell® includes a heat exchanger, such as an air-cooled or water-cooled heat exchanger. In one embodiment, the heater exchanger may include a tube-in-shell design (FIGS. 29D-E). The heater exchanger may contain a plurality of tubes 801 through which molten metal, such as molten silver or molten gallium, circulates from the SunCell® 812. The heat exchanger may comprise (i) a molten metal reservoir (such as reservoir 5c) containing molten metal (such as molten gallium or molten silver) receiving thermal power from reaction unit chamber 5b31; (ii) at least one cycle Solenoid pump 810 which pumps molten metal from SunCell® and back to SunCell® via heat exchanger; (iv) Shell 806 with inlet 807 and outlet 808 for forcing of external coolant such as air or water flow, wherein the baffle 809 can direct the flow of the external coolant through the shell, wherein the gas flow can be reversed to the flow of molten gallium in the conduit; (v) at least one channel or conduit 801 inside the shell 806 for internal flow Molten metal with external coolant flowing through the shell 806 and via conduit 801 to transfer heat from the molten metal to the external coolant; (v) heat exchanger inlet line 803 and heat exchanger outlet line 804 with the circulating pump running at Molten metal reservoir 5c, heat exchanger and connections in the loop formed by inlet and outlet lines; (vi) coolant pumps or blowers; and (vii) sensors and control systems to control the flow of molten metal and coolant . The heat exchanger may further include at least one heat exchanger manifold 802 and distributor 805 . Inlet manifold 802 may receive hot molten metal from circulating EM pump 810 and distribute it to a plurality of channels or conduits 801 . Molten metal outlet manifold 802 may receive molten metal via distributor 805, combine the dispersed flow from the plurality of conduits, and direct the molten metal flow to a heat exchanger outlet line 804 connected back to battery reservoir 5c. The circulating EM pump can pump hot gallium to the heat exchanger via heat exchanger inlet line 803 and back to battery reservoir 5c via outlet line 804 . The heat exchanger may further include an external coolant inlet 807 and an outlet 808 and may further include baffles 809 to direct the flow of the external coolant over the molten metal conduit 801 . This flow may be produced by an external coolant blower or pump 811 such as a blower or compressor or water pump. In response to input from at least one sensor such as a thermocouple and flow rate meter, the flow of SunCell® molten metal and external coolant through the heat exchanger can be pumped by at least one controller and control the corresponding pump or blower Or computer control of the blower speed.

其他外部冷卻劑分別在本發明之範疇內,諸如熔融金屬、熔融鹽或與空氣及水相比之另一氣體或液體,其在此項技術中已知。在包含具有水冷卻劑之水鍋爐熱交換器之實施例中,管801可包含碳。水可進入入口807且蒸汽可離開出口808。在蒸汽鍋爐實施例中,儲集器含有鎵之高度,且鎵自儲集器之底部再循環以保持自頂部至底部之所需溫度梯度,使得蒸汽鍋爐之管中的鎵溫度保持在低於在管之表面上引起膜層沸騰的溫度。另外,自儲集器之底部噴射較低溫度鎵可抑制反應單元腔室中之鎵沸騰以防止不合需要之壓力增加。Other external coolants are within the scope of the present invention, such as molten metal, molten salt, or another gas or liquid compared to air and water, which are known in the art. In embodiments comprising a water boiler heat exchanger with water coolant, the tubes 801 may comprise carbon. Water can enter inlet 807 and steam can exit outlet 808 . In the steam boiler embodiment, the reservoir contains a height of gallium and gallium is recirculated from the bottom of the reservoir to maintain the desired temperature gradient from top to bottom so that the gallium temperature in the tubes of the steam boiler is kept below The temperature that causes the film to boil on the surface of the tube. In addition, lower temperature gallium injection from the bottom of the reservoir can inhibit boiling of the gallium in the reaction unit chamber to prevent undesirable pressure increases.

例示性熱交換器,包括可在外部冷卻劑與熔融金屬之間交換熱的熱交換器說明於圖29D中。熱交換器可包含Ta組件,諸如Ta導管801、歧管802、分配器805、熱交換器入口管線803及熱交換器出口管線804中之至少一者。熔融金屬可經由入口管線803進入,收集在入口歧管802中,經由分配器805及導管801傳遞至出口歧管802,最終經由出口管線804離開。例示性熱交換器進一步包含不鏽鋼殼層806、外部冷卻劑入口807、外部冷卻劑出口808及隔板809。冷卻劑可進入入口807且朝向出口808在導管801之外表面上方傳遞。冷卻劑與導管之間的接觸可經由導管之表面將熱自熔融金屬傳遞,且在其在出口管線804處離開之前傳遞至冷卻劑。Ta組件可焊接在一起。諸如導管801之Ta熱交換器組件之經空氣曝露表面可經陽極化以防止腐蝕。替代地,Ta導管801可包含塗層或包層,諸如包含錸、貴金屬、Pt、Pd、Ir、Ru、Rh、TiN、CrN、陶瓷、鋯鈦釔氧化物(ZTY)及富鋁紅柱石中之至少一者或本發明之另一者以防止Ta導管外部氧化的塗層或包層。Ta組件可用不鏽鋼包覆。包層可包含藉由諸如焊接件或膠(諸如具有至少1000℃之穩定性之膠,諸如額定至1300℃之J-B焊接件37901)之方式接合在一起的複數個片件。鋼殼806可包含至少底部區段之襯墊或塗層以收集任何漏泄鎵,諸如Ta襯墊或ZTY或富鋁紅柱石塗層。包含Ta之熱交換器(諸如包含Ta導管801之熱交換器)可為模組化的,其中複數個熱交換器模組充當模組之累積大小的熱交換器而非單一熱交換器以避免熱膨脹故障。Exemplary heat exchangers, including those that can exchange heat between an external coolant and molten metal, are illustrated in Figure 29D. The heat exchanger may include Ta components such as at least one of Ta conduit 801 , manifold 802 , distributor 805 , heat exchanger inlet line 803 and heat exchanger outlet line 804 . Molten metal may enter via inlet line 803 , collect in inlet manifold 802 , pass via distributor 805 and conduit 801 to outlet manifold 802 , and finally exit via outlet line 804 . The exemplary heat exchanger further includes a stainless steel shell 806 , an external coolant inlet 807 , an external coolant outlet 808 , and a baffle 809 . Coolant may enter inlet 807 and pass over the outer surface of conduit 801 towards outlet 808 . Contact between the coolant and the conduit can transfer heat from the molten metal via the surface of the conduit and to the coolant before it exits at outlet line 804 . Ta components can be soldered together. Air exposed surfaces of Ta heat exchanger components such as conduit 801 can be anodized to prevent corrosion. Alternatively, Ta conduit 801 may comprise a coating or cladding, such as in rhenium, noble metals, Pt, Pd, Ir, Ru, Rh, TiN, CrN, ceramic, zirconium titanium yttrium oxide (ZTY), and mullite At least one of or the other of the present invention is a coating or cladding to prevent oxidation of the outside of the Ta conduit. Ta components can be clad with stainless steel. The cladding may comprise a plurality of pieces joined together by means such as solder or glue (such as glue having a stability of at least 1000°C, such as J-B solder 37901 rated to 1300°C). The steel casing 806 may contain a liner or coating of at least the bottom section to collect any leaking gallium, such as a Ta liner or ZTY or mullite coating. Heat exchangers containing Ta, such as the heat exchanger containing Ta conduit 801, may be modular, with multiple heat exchanger modules acting as a cumulative size heat exchanger of the modules rather than a single heat exchanger to avoid Thermal expansion failure.

替代地,至少一個Ta組件可經諸如Ta電鍍之組件的Ta塗佈組件替換,其中Ta塗佈組件包含不鏽鋼或具有約匹配熱膨脹係數的其他金屬(例如鎳鋼、科伐合金或其他SS或金屬)。錸(熔點3185℃)對鎵、鎵銦錫合金、銀及銅之侵蝕具有抗性,且對藉由氧氣及水之氧化具有抗性。在另一實施例中,熱交換器包含至少一個Re塗佈組件,諸如經Re電鍍之組件,其中Re塗佈組件包含不鏽鋼或具有約匹配熱膨脹係數之其他金屬(例如鎳鋼、科伐合金或其他SS或金屬)。在另一實施例中,至少一個Ta組件可用包含或塗佈有347 SS或Cr-Mo SS、W、Mo、Nb、Nb(94.33重量%)-Mo(4.86重量%)-Zr(0.81重量%)、Os、Ru、Hf、Re及經矽化物塗佈之Mo中之至少一者的組件替換。Alternatively, at least one Ta component may be replaced by a Ta coated component such as a Ta electroplated component, wherein the Ta coated component comprises stainless steel or other metal with approximately matching coefficient of thermal expansion (eg nickel steel, Kovar or other SS or metal) ). Rhenium (melting point 3185°C) is resistant to attack by gallium, gallium indium tin alloy, silver and copper, and is resistant to oxidation by oxygen and water. In another embodiment, the heat exchanger includes at least one Re-coated component, such as a Re-plated component, wherein the Re-coated component includes stainless steel or other metals with approximately matching coefficients of thermal expansion (eg, nickel steel, Kovar, or other SS or metal). In another embodiment, at least one Ta component may contain or be coated with 347 SS or Cr-Mo SS, W, Mo, Nb, Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%) ), Os, Ru, Hf, Re, and at least one of silicide-coated Mo component replacement.

另一例示性熱交換器包含石英、SiC、Si3 N4 、氧化釔穩定化之氧化鋯或BN導管801、歧管802、分配器805、熱交換器入口管線803、熱交換器出口管線804、殼層806、外部冷卻劑入口807、外部冷卻劑出口808及隔板809。該等組件可藉由稠合、與石英、SiC或BN黏著劑膠合或藉由接頭或管接頭,諸如包含凸緣及墊片(諸如碳(Graphoil)墊片)之接頭或管接頭而接合。例示性SiC熱交換器包含(i)板、(ii)殼中之塊、(iii) SiC環形凹槽及(iv)藉由製造商(諸如GAB Neumann (https :// www . gab - neumann . com )之殼管式熱交換。Si可以小重量% (諸如小於5重量%)添加至熔融金屬(諸如鎵)以防止SiC降解。熱交換器可包含吹風機或壓縮機811以迫使空氣穿過SiC塊之通道。例示性EM泵810為包含SiC襯墊且能夠在1000℃下操作之Pyrotek模型410。在包含Ga熔融金屬冷卻劑之實施例中,至少一個連接件可包含對與鎵形成合金具抗性之材料,諸如本發明之材料。在例示性實施例中,熱交換器入口803、熱交換器入口歧管803a、熱交換器入口管線803b、熱交換器出口804、熱交換器出口歧管804a及熱交換器出口管線804中之至少一者包含陶瓷,諸如BN、可經SiC塗佈之碳、W、Ta、釩、347 SS或Cr-Mo SS、Mo、Nb、Nb(94.33重量%)-Mo(4.86重量%)-Zr(0.81重量%)、Os、Ru、Hf、Re及經矽化物塗佈之Mo。Another exemplary heat exchanger comprises quartz, SiC, Si 3 N 4, of yttria stabilized zirconia or BN conduit 801, manifold 802, a dispenser 805, the heat exchanger inlet line 803, the heat exchanger outlet line 804 , shell 806 , external coolant inlet 807 , external coolant outlet 808 and baffle 809 . The components may be joined by fusing, gluing with quartz, SiC or BN adhesives or by joints or fittings such as those comprising flanges and gaskets such as carbon (Graphoil) gaskets. Exemplary SiC heat exchanger comprising (i) plate, (ii) in the housing block, (iii) SiC annular groove and (iv) by the manufacturer (such as GAB Neumann (https:. // www gab - neumann. com ) shell and tube heat exchange. Si may be added to molten metal (such as gallium) in small wt % (such as less than 5 wt %) to prevent SiC degradation. The heat exchanger may include a blower or compressor 811 to force air through the SiC The channel of the block. An exemplary EM pump 810 is a Pyrotek model 410 that includes a SiC liner and is capable of operating at 1000° C. In embodiments including a Ga molten metal coolant, at least one connection may include a pair of alloys with gallium Resistant materials, such as the materials of the present invention. In the exemplary embodiment, heat exchanger inlet 803, heat exchanger inlet manifold 803a, heat exchanger inlet line 803b, heat exchanger outlet 804, heat exchanger outlet manifold At least one of the tube 804a and the heat exchanger outlet line 804 comprises a ceramic such as BN, SiC-coated carbon, W, Ta, vanadium, 347 SS or Cr-Mo SS, Mo, Nb, Nb (94.33 wt. %)-Mo (4.86 wt%)-Zr (0.81 wt%), Os, Ru, Hf, Re, and silicide-coated Mo.

組件之間的密封件(諸如連接泵810、熱交換器入口803、熱交換器入口歧管803a、熱交換器入口管線803b、熱交換器出口804、熱交換器出口歧管804a及熱交換器出口管線804b中之至少兩者的彼等密封件)可包含膠合接頭、焊接接頭或帶凸緣接頭,該等接頭具有諸如陶瓷墊片之墊片,該等墊片諸如包含Thermiculite(例如Flexitallic)之墊片或諸如Graphoil或Graphilor之碳墊片。碳墊片可藉由諸如Resbond、SiC糊狀物或熱膏、包層之塗層氣密地密封,或藉由殼體保護以免受氧化。在一實施例中,密封件可包含可延展金屬,諸如Ta,其中密封組件亦可包含可延展金屬。在一實施例中,密封件可包含精度加工且藉由諸如彈簧之壓縮構件推動在一起的兩個陶瓷面。Seals between components (such as connecting pump 810, heat exchanger inlet 803, heat exchanger inlet manifold 803a, heat exchanger inlet line 803b, heat exchanger outlet 804, heat exchanger outlet manifold 804a, and heat exchanger The seals for at least two of the outlet lines 804b) may comprise glued joints, welded joints or flanged joints with gaskets such as ceramic gaskets such as those containing Thermiculite (eg Flexitallic) gaskets or carbon gaskets such as Graphoil or Graphilor. Carbon gaskets can be hermetically sealed by coatings such as Resbond, SiC paste or thermal paste, cladding, or protected from oxidation by a casing. In one embodiment, the seal may comprise a malleable metal, such as Ta, wherein the sealing member may also contain a malleable metal. In one embodiment, the seal may include two ceramic faces that are precision machined and urged together by a compression member such as a spring.

在其中導管801中之熔融金屬保持在諸如低於750℃、650℃、550℃、450℃及350℃中之至少一者之溫度的較低溫度下的實施例中,熱交換泵810可包含諸如具有陶瓷葉輪及殼體之機械泵的機械泵以避免合金形成。EM泵可包含流量計(諸如,電磁流量計)及控制器,以監測及控制熔融金屬流過例如熱交換器組件,諸如在其入口處、出口處、歧管中、分配器中、導管中或其組合,其中流量計可經定位以感測流經此等組件中之一或多者的流量。In embodiments in which the molten metal in conduit 801 is maintained at a lower temperature, such as a temperature below at least one of 750°C, 650°C, 550°C, 450°C, and 350°C, heat exchange pump 810 may include Mechanical pumps such as those with ceramic impellers and casings avoid alloy formation. EM pumps may include flow meters (such as electromagnetic flow meters) and controllers to monitor and control the flow of molten metal through, for example, heat exchanger assemblies, such as at their inlets, outlets, in manifolds, in distributors, in conduits or a combination thereof, wherein the flow meter can be positioned to sense flow through one or more of these components.

在例示性實施例中,殼中之SiC塊或殼與SiC管式熱交換器之殼層806可包含具有約匹配SiC之熱膨脹係數的諸如科伐合金或鎳鋼不鏽鋼之材料以使得殼層之膨脹與SiC塊或SiC管之膨脹大約相同。殼層806可包含擴展構件,諸如波紋管。替代地,熱交換器殼層806可包含重疊以允許膨脹之兩個區段。諸如搭接或舌片及凹槽接頭之接頭可藉由膨脹進行密封。In an exemplary embodiment, the SiC block in the shell or shell 806 of the shell and SiC tubular heat exchanger may comprise a material such as Kovar or nickel-steel stainless steel having a coefficient of thermal expansion approximately matching SiC such that the shells The expansion is about the same as that of a SiC block or SiC tube. Shell 806 may contain expansion members, such as bellows. Alternatively, the heat exchanger shell 806 may include two sections that overlap to allow expansion. Joints such as lap joints or tongue and groove joints can be sealed by expansion.

在一實施例中,熱交換器包含保護電路及保護軟體中之至少一者以控制EM泵防止至少一個熱交換器組件(諸如陶瓷)之熱衝擊,該熱交換器組件諸如殼中塊式熱交換器的SiC塊或殼管式熱交換器之SiC管。In one embodiment, the heat exchanger includes at least one of a protection circuit and protection software to control the EM pump against thermal shock of at least one heat exchanger component, such as a ceramic, such as a block-in-shell heat exchanger component. SiC blocks for exchangers or SiC tubes for shell and tube heat exchangers.

熱交換器可包含碳組件,諸如碳導管801、歧管802、分配器805、熱交換器入口管線803及熱交換器出口管線804、806、外部冷卻劑入口807、外部冷卻劑出口808及隔板809中之至少一者。碳組件可為膠合在一起或藉由墊片接頭(諸如包含Graphoil墊片之接頭)緊固在一起中之至少一者。曝露於空氣之表面可塗佈有抗氧化塗層,諸如SiC,諸如CVD SiC或SiC釉。例示性熱交換器為GAB Neumann(https://www.gab-neumann.com)之殼管式設計,其中諸如導管801之外表面的外表面塗佈有SiC。替代地,外表面可包覆於抗氧化材料(諸如不鏽鋼)中。在另一實施例中,SunCell®組件(諸如EM泵組件或與空氣(諸如碳或Ta)反應之熱交換器組件)可容納於可抽空或用諸如稀有氣體(諸如氬氣或氮氣)之惰性氣體填充以保護所容納SunCell®組件以免在高溫下氧化的可氣密密封或具有真空能力之殼體中。自EM泵至熱交換器入口803之鎵管線可包含在操作溫度下不與碳反應之金屬,使得諸如墊片連接(諸如碳墊片凸緣連接)之金屬至碳連接不會發生反應以形成碳化物。在1000℃下不與碳反應之例示性金屬為鎳或經鎳或錸電鍍之金屬,諸如經鎳或錸電鍍之不鏽鋼。The heat exchanger may include carbon components such as carbon conduit 801, manifold 802, distributor 805, heat exchanger inlet line 803 and heat exchanger outlet lines 804, 806, external coolant inlet 807, external coolant outlet 808, and partitions At least one of the plates 809. The carbon components may be at least one of glued together or fastened together by gasket joints, such as joints comprising Graphoil gaskets. Surfaces exposed to air may be coated with an anti-oxidation coating, such as SiC, such as CVD SiC or SiC glaze. An exemplary heat exchanger is a shell-and-tube design of GAB Neumann (https://www.gab-neumann.com), where the outer surface, such as the outer surface of conduit 801, is coated with SiC. Alternatively, the outer surface may be clad in an oxidation resistant material such as stainless steel. In another embodiment, SunCell® components (such as EM pump components or heat exchanger components that react with air (such as carbon or Ta)) may be contained in evacuable or inert gas such as noble gases (such as argon or nitrogen) Gas filled to protect the contained SunCell® components from oxidation at high temperatures in a hermetically sealed or vacuum capable housing. The gallium line from the EM pump to the heat exchanger inlet 803 may contain a metal that does not react with carbon at operating temperatures, so that metal-to-carbon connections such as gasket connections (such as carbon gasket flange connections) do not react to form carbide. Exemplary metals that do not react with carbon at 1000°C are nickel or nickel or rhenium plated metals, such as nickel or rhenium plated stainless steel.

在圖29E-G中所展示之例示性實施例中,接觸熔融鎵之組件包含碳,且接觸空氣冷卻劑之組件包含不鏽鋼。導管襯墊801a、歧管或罩蓋802、熱交換器入口管線803及熱交換器出口管線804包含碳,且導管801、分配器805、殼層806、外部冷卻劑入口807、外部冷卻劑出口808及隔板809包含不鏽鋼。將每一不鏽鋼導管801在每一端處焊接至對應分配器805。分配器805經焊接至殼層806,使得空氣冷卻劑僅接觸不鏽鋼。罩蓋802、入口803及出口804係在不鏽鋼殼體806a內部,該殼體具有連接至殼體806a內部之碳熱交換器入口管線803及出口管線804的焊接入口管線803c及焊接出口管線804c,其中該等連接件包含墊片凸緣管接頭。墊片可包含碳。每一分配器805可包含兩個片件,一個外部片件805a包含膠合至襯墊801a之末端的碳且內部片件包含焊接至殼體806a及殼層806之不鏽鋼。自鎵循環EM泵810之管線803及至儲集器5c之返回管線804可包含膨脹接頭,諸如波紋管或彈簧負載接頭。In the exemplary embodiment shown in Figures 29E-G, the components contacting the molten gallium comprise carbon, and the components contacting the air coolant comprise stainless steel. Conduit liner 801a, manifold or cover 802, heat exchanger inlet line 803, and heat exchanger outlet line 804 contain carbon, and conduit 801, distributor 805, shell 806, external coolant inlet 807, external coolant outlet 808 and separator 809 comprise stainless steel. Each stainless steel conduit 801 is welded to the corresponding distributor 805 at each end. The distributor 805 is welded to the shell 806 so that the air coolant only contacts the stainless steel. Cover 802, inlet 803 and outlet 804 are attached inside stainless steel housing 806a with welded inlet line 803c and welded outlet line 804c connected to carbon heat exchanger inlet line 803 and outlet line 804 inside housing 806a, Wherein the connectors comprise gasket flange pipe joints. Gaskets may contain carbon. Each dispenser 805 may comprise two pieces, an outer piece 805a comprising carbon glued to the end of the gasket 801a and an inner piece comprising stainless steel welded to the housing 806a and shell 806. Line 803 from gallium circulating EM pump 810 and return line 804 to reservoir 5c may include expansion joints, such as bellows or spring loaded joints.

在一實施例中,包含碳組件(諸如曝露於空氣之碳組件(諸如導管801))之熱交換器進一步包含碳燃燒產物偵測器(諸如煙霧偵測器及保護系統)以避免組件故障及涉及熔融金屬(諸如鎵)之潛在燃燒。保護系統可包含滅火系統,諸如此項技術中已知之彼等系統,諸如滅火器系統或關閉至殼層806之腔室之氣流的值集合,此類閥在外部冷卻劑入口807及出口808處。In one embodiment, a heat exchanger including a carbon component such as an air exposed carbon component such as conduit 801 further includes a carbon combustion product detector such as a smoke detector and protection system to avoid component failure and Involves potential combustion of molten metals such as gallium. The protection system may include a fire suppression system, such as those known in the art, such as a fire extinguisher system or a set of values to close the airflow to the chamber of the shell 806, such valves at the external coolant inlet 807 and outlet 808.

陽極膜可形成於鈦、鋅、鎂、鈮、鋯、鉿及鉭之表面上。Nb、Ta及Zr之例示性氧化物比氧化鎵更穩定。在一實施例中,SunCell®及熱交換器之至少一個組件包含形成陽極或氧化膜或塗層之金屬。氧化物塗層可進行以下中之至少一者:(i)保護組分免於與熔融金屬形成合金,該熔融金屬諸如鎵、鎵銦錫合金、銀及銅中之至少一者;及(ii)保護組分免於氧化。在例示性實施例中,組件包含可包含保護性氧化物塗層之Nb、Ta及Zr中之至少一者。在SunCell®組件之實施例中,組分可經陽極化以形成保護性氧化物塗層,其可保護組分免於與熔融金屬(諸如鎵、鎵銦錫合金、銀及銅)形成合金且保護組分免於低能量氫反應混合物氧化。在熱交換器組件之實施例中,曝露於空氣之組分可經陽極化以保護該組分免於空氣氧化。Anode films can be formed on surfaces of titanium, zinc, magnesium, niobium, zirconium, hafnium, and tantalum. Exemplary oxides of Nb, Ta and Zr are more stable than gallium oxide. In one embodiment, at least one component of the SunCell® and heat exchanger comprises a metal forming an anode or oxide film or coating. The oxide coating can be at least one of: (i) protecting the components from alloying with molten metals, such as at least one of gallium, gallium indium tin alloys, silver, and copper; and (ii) ) protects the components from oxidation. In an exemplary embodiment, the component includes at least one of Nb, Ta, and Zr, which may include a protective oxide coating. In embodiments of SunCell® components, the components can be anodized to form a protective oxide coating that protects the components from alloying with molten metals such as gallium, gallium indium tin alloys, silver, and copper and The components are protected from oxidation by the low energy hydrogen reaction mixture. In embodiments of heat exchanger assemblies, components exposed to air may be anodized to protect the components from air oxidation.

在圖29H中所展示之一實施例中,交換器包含本發明之熱交換器之複數個模組化單元813。熔融金屬可經由熱交換器入口管線803b自儲集器5c流動至熱交換器入口歧管803a以到達每一熱交換器模組813之入口803。熔融金屬可藉由EM泵810泵抽回至儲集器5c,該EM泵保持熔融金屬流動穿過每一熱交換器出口804、出口歧管804a及熱交換器出口管線804b。In one embodiment shown in Figure 29H, the exchanger includes a plurality of modular units 813 of the heat exchanger of the present invention. Molten metal may flow from the reservoir 5c to the heat exchanger inlet manifold 803a via the heat exchanger inlet line 803b to the inlet 803 of each heat exchanger module 813. Molten metal can be pumped back to reservoir 5c by EM pump 810, which keeps molten metal flowing through each heat exchanger outlet 804, outlet manifold 804a, and heat exchanger outlet line 804b.

在一實施例中,熱交換器可包含初級迴路及次級迴路,其中儲集器5c之熔融金屬在初級迴路中保持與冷卻劑(諸如次級迴路中之熔融金屬或熔融鹽冷卻劑)分離。藉由第一級熱交換器將熱自初級迴路交換至次級迴路,且藉由二級熱交換器將熱遞送至負載。在一實施例中,次級迴路包含熔融金屬或熔融鹽熱交換器。在一實施例中,熔融鎵至空氣熱交換器可包含商業熔融鎵至空氣熱交換器或商業熔融鹽至空氣熱交換器,其中後者可與包含用熔融鎵替換熔融鹽之修改相容。In one embodiment, the heat exchanger may comprise a primary loop and a secondary loop, wherein the molten metal of the reservoir 5c is kept separate from the coolant (such as molten metal or molten salt coolant in the secondary loop) in the primary loop . Heat is exchanged from the primary loop to the secondary loop by the first stage heat exchanger and delivered to the load by the secondary heat exchanger. In one embodiment, the secondary loop comprises a molten metal or molten salt heat exchanger. In one embodiment, the molten gallium to air heat exchanger may comprise a commercial molten gallium to air heat exchanger or a commercial molten salt to air heat exchanger, wherein the latter is compatible with modifications comprising substituting molten gallium for molten salt.

熱交換器可包含複數個級,諸如雙級熱交換器,其中第一氣體或液體包含第一級中之外部冷卻劑,且第二氣體或液體包含第二級中之外部冷卻劑。經由熱交換器(諸如氣體-氣體熱交換器)將熱自第一外部冷卻劑傳遞至第二外部冷卻劑。例示性雙級熱交換器包含碳導管801、歧管802、分配器805、熱交換器入口管線803、熱交換器出口管線804、殼層806、外部冷卻劑入口807、外部冷卻劑出口808及隔板809。該等組件可藉由與碳黏著劑膠合或藉由接頭或管接頭,諸如包含凸緣及墊片(諸如碳(Graphoil)墊片)之接頭或管接頭而接合。第一外部冷卻劑可包含稀有氣體,諸如氦氣或氮氣,其將熱傳遞通過氣體-氣體熱交換器至包含空氣之第二外部冷卻劑。The heat exchanger may comprise multiple stages, such as a two-stage heat exchanger, in which a first gas or liquid contains the external coolant in the first stage and a second gas or liquid contains the external coolant in the second stage. Heat is transferred from the first external coolant to the second external coolant via a heat exchanger, such as a gas-to-gas heat exchanger. An exemplary two-stage heat exchanger includes carbon conduit 801, manifold 802, distributor 805, heat exchanger inlet line 803, heat exchanger outlet line 804, shell 806, external coolant inlet 807, external coolant outlet 808, and Separator 809. The components may be joined by gluing with carbon adhesive or by joints or pipe joints, such as joints or pipe joints including flanges and gaskets such as carbon (Graphoil) gaskets. The first external coolant may contain a noble gas, such as helium or nitrogen, which transfers heat through the gas-gas heat exchanger to the second external coolant containing air.

在一實施例中,第一級熱交換器包含碳,諸如石墨環形凹槽熱交換器,殼中塊式熱交換器、來自GAB Neumann(https :// www . gab - neumann . com )之殼管式熱交換器,其中鎵在第一級中與作為外部冷卻劑之銀交換熱且銀在第二級中與諸如空氣之另一外部冷卻劑交換其熱。第二級熱交換器可包含諸如圖29D中所展示之殼管式設計。在另一實施例中,諸如殼管式熱交換器之第一級熱交換器包含鉭。In one embodiment, the first stage heat exchanger comprises carbon, such as graphite annular groove heat exchanger shell block from GAB Neumann: - shell (https // www gab neumann com. .) Of A tubular heat exchanger in which gallium exchanges heat with silver as an external coolant in a first stage and silver exchanges its heat with another external coolant, such as air, in a second stage. The second stage heat exchanger may comprise a shell and tube design such as that shown in Figure 29D. In another embodiment, the first stage heat exchanger, such as a shell and tube heat exchanger, contains tantalum.

在一實施例中,外部冷卻劑吹風器811包含經由熱交換器外部冷卻劑入口807供應經壓縮空氣之燃氣渦輪機的壓縮機。空氣可在導管801上方流動。經加熱空氣可離開熱交換器外部冷卻劑出口808且流入燃氣渦輪機之功率區段中,其中SunCell® 812及熱交換器813包含外部燃燒室類型燃氣渦輪機機械或電功率產生器之熱功率來源。In one embodiment, the external coolant blower 811 includes a compressor of a gas turbine that supplies compressed air via the heat exchanger external coolant inlet 807 . Air can flow over conduit 801 . The heated air may exit the heat exchanger external coolant outlet 808 and flow into the power section of the gas turbine, where the SunCell® 812 and heat exchanger 813 comprise the thermal power source of the external combustor type gas turbine mechanical or electrical power generator .

在一實施例中,至少一個熱交換器組件(諸如入口管線803及出口管線804、分配器805、歧管802及導管801)為塗佈或內襯有阻止與熔融金屬(諸如鎵)形成合金或以其他方式防止組件腐蝕的材料中之至少一者。塗層或襯墊可包含本發明之塗層或襯墊,諸如BN、碳、石英、鋯鈦釔氧化物、富鋁紅柱石或氧化鋁。在例示性實施例中,熔融金屬包含鎵,至少一個熱交換器組件(諸如入口管線803及出口管線804、分配器805、歧管802及導管801)包含不鏽鋼,且襯墊包含石英或另一陶瓷。不鏽鋼可由科伐合金或鎳鋼替換,避免熱膨脹及與諸如包含石英之陶瓷襯墊的陶瓷襯墊的收縮失配。在替代例示性實施例中,導管包含鎳,其各自具有碳襯墊。In one embodiment, at least one heat exchanger component (such as inlet line 803 and outlet line 804, distributor 805, manifold 802, and conduit 801) is coated or lined to prevent alloying with molten metal, such as gallium or at least one of the materials that otherwise prevent corrosion of the components. The coating or liner may comprise a coating or liner of the present invention, such as BN, carbon, quartz, zirconium titanium yttrium oxide, mullite or alumina. In an exemplary embodiment, the molten metal comprises gallium, at least one heat exchanger component (such as inlet line 803 and outlet line 804, distributor 805, manifold 802, and conduit 801) comprises stainless steel, and the gasket comprises quartz or another ceramics. Stainless steel can be replaced by Kovar or nickel steel, avoiding thermal expansion and shrinkage mismatch with ceramic liners such as those containing quartz. In an alternative exemplary embodiment, the conduits comprise nickel, each having a carbon backing.

在一實施例中,熱交換器可在SunCell®儲集器內部對比外部。至少一個熱交換器歧管可包含儲集器5c。使諸如鎵之熔融金屬循環通過熱交換器導管之EM泵可包含噴射器EM泵5ka及另一泵中之至少一者。In one embodiment, the heat exchanger may be inside the SunCell® reservoir versus outside. At least one heat exchanger manifold may contain reservoir 5c. The EM pump that circulates the molten metal, such as gallium, through the heat exchanger conduits may comprise at least one of the ejector EM pump 5ka and another pump.

在一實施例中,熱交換器可包含兩端歧管802與連接歧管之複數個管801。替代地,熱交換器包含連接歧管之一或多個Z形導管。歧管可進一步充當儲集器。該等導管可嵌入於散熱片之系統或陣列中。熱交換器可包含卡車輻射器類型,其中水冷卻劑經熔融金屬替換,且水泵經熔融金屬泵(諸如EM泵)替換。輻射器可藉由外部冷卻劑(諸如空氣或水)冷卻。外部冷卻劑可分別藉由吹風機或水泵輸送,吹風機或水泵迫使外部冷卻劑(諸如空氣或水)流動通過散熱片。散熱片可包含具有高熱傳遞係數之材料,諸如銅、鎳或Ni-Cu合金。In one embodiment, the heat exchanger may include a manifold 802 at both ends and a plurality of tubes 801 connecting the manifolds. Alternatively, the heat exchanger contains one or more Z-shaped conduits connecting the manifolds. The manifold can further act as a reservoir. These conduits can be embedded in a system or array of heat sinks. The heat exchanger may comprise a truck radiator type where the water coolant is replaced by molten metal and the water pump is replaced by a molten metal pump, such as an EM pump. The radiator can be cooled by an external coolant such as air or water. The external coolant may be delivered by a blower or water pump, respectively, which forces an external coolant, such as air or water, to flow through the fins. The heat sink may comprise a material with a high thermal transfer coefficient, such as copper, nickel or Ni-Cu alloys.

在另一實施例中,熱交換器可包含板式熱交換器,諸如藉由包含平行板之Alfa-Laval製得的板式熱交換器,其中外部冷卻劑(諸如空氣)及SunCell®熔融金屬在板之間的交替通道中流動。In another embodiment, the heat exchanger may comprise a plate heat exchanger, such as a plate heat exchanger made by Alfa-Laval comprising parallel plates in which an external coolant (such as air) and SunCell® molten metal are flow in alternating channels.

在一實施例中,熱交換器可包含鍋爐,諸如蒸汽鍋爐。在一實施例中,液體熔融金屬熱交換器包含導管,其包含用於在包含鍋爐之加壓容器806中加熱水的鍋爐管801。導管801可定位於包含鍋爐之加壓容器806內部。熔融金屬可經由導管801泵抽,其中熱功率流動至水池中以在鍋爐中形成過熱水及蒸汽中之至少一者。過熱水可在蒸汽產生器中轉化為蒸汽。In an embodiment, the heat exchanger may comprise a boiler, such as a steam boiler. In one embodiment, the liquid molten metal heat exchanger includes conduits that include boiler tubes 801 for heating water in a pressurized vessel 806 containing a boiler. Conduit 801 may be positioned inside a pressurized vessel 806 containing a boiler. Molten metal can be pumped through conduit 801 where thermal power flows into a pool to form at least one of superheated water and steam in the boiler. The superheated water can be converted into steam in a steam generator.

在例示性實施例中,鍋爐包含在殼層中具有縱向導管之圓柱形殼層,其中外部水冷卻劑縱向流動通過殼層且沿著可包含表面突出物之導管以增大導管表面積及產生湍流以增強自導管至水之熱傳遞中之至少一者。圓柱形殼層可經豎直定向。在一實施例中,底板5kk1可具有用於冷卻劑流動之開口。另外,底板5kk1可進行以下各者中之至少一者:包含諸如厚度範圍為約0.1毫米及5毫米之薄板,及包含具有較高熱傳遞係數之金屬,諸如W、Ta、Nb或Cr-Mo SS板,以改良底板冷卻。In an exemplary embodiment, the boiler includes a cylindrical shell with longitudinal conduits in the shell, wherein external water coolant flows longitudinally through the shell and along conduits that may include surface protrusions to increase conduit surface area and create turbulence to enhance at least one of heat transfer from the conduit to the water. The cylindrical shell can be oriented vertically. In one embodiment, the bottom plate 5kk1 may have openings for coolant flow. Additionally, the base plate 5kk1 may be at least one of: comprising thin plates such as thicknesses ranging from about 0.1 mm and 5 mm, and comprising metals with higher heat transfer coefficients such as W, Ta, Nb or Cr-Mo SS plate for improved bottom plate cooling.

在一實施例中,SunCell®及熱交換器包含至少一個溫度量測裝置,諸如熱電偶或熱敏電阻,其可為表面黏著至組件、浸沒於熔融金屬中及曝露於反應單元腔室5b31中之氣體或電漿中之至少一者。反應單元腔室之壁、EM泵管5k6及熱交換器組件(諸如導管801、歧管802、分配器805、熱交換器入口管線803及熱交換器出口管線804中之至少一者)中之至少一者的溫度可藉由可接合至組件之表面的至少一個表面黏著熱電偶監測。接合可包含焊接件或陶瓷膠,諸如具有高熱傳遞係數之焊接件或陶瓷膠。膠可包含BN或SiC。In one embodiment, the SunCell® and heat exchanger include at least one temperature measurement device, such as a thermocouple or thermistor, which may be surface-attached to the component, immersed in molten metal, and exposed in the reaction cell chamber 5b31 at least one of gas or plasma. Among the walls of the reaction unit chamber, EM pump tubing 5k6 and heat exchanger components such as at least one of conduit 801, manifold 802, distributor 805, heat exchanger inlet line 803 and heat exchanger outlet line 804 The temperature of at least one can be monitored by at least one surface mount thermocouple that can be bonded to the surface of the component. The bonding may comprise a weld or ceramic glue, such as a weld or ceramic glue with a high heat transfer coefficient. The glue may contain BN or SiC.

在一實施例中,SunCell®包含:真空系統,其包含至反應單元腔室之真空管線;及真空泵,其用以在間歇性或連續性基礎上自反應單元腔室抽空氣體。在一實施例中,SunCell®包含冷凝器以冷凝至少一種低能量氫反應反應物或產物。冷凝器可與真空泵成一直線或包含與真空泵之氣體導管連接。真空系統可進一步包含冷凝器以冷凝自反應單元腔室流動之至少一種反應物或產物。冷凝器可使冷凝液、冷凝反應物或產物選擇性地流回反應單元腔室中。冷凝器可保持在一定溫度範圍內以使得冷凝液選擇性流動返回至反應單元腔室。流動可為主動或被動輸送之方式,諸如分別藉由泵抽或藉由重力流動。在一實施例中,冷凝器可包含防止粒子,諸如鎵或氧化鎵奈米粒子自反應單元腔室流入真空系統,諸如過濾器、Z形通道及靜電沈澱器中之至少一者中的構件。在一實施例中,真空泵可藉由諸如水或強制空氣冷卻之手段冷卻。In one embodiment, the SunCell® includes: a vacuum system including a vacuum line to the reaction unit chamber; and a vacuum pump for evacuating gas from the reaction unit chamber on an intermittent or continuous basis. In one embodiment, the SunCell® includes a condenser to condense at least one low energy hydrogen reactant or product. The condenser can be in-line with the vacuum pump or contain a gas conduit connection to the vacuum pump. The vacuum system may further include a condenser to condense at least one reactant or product flowing from the reaction unit chamber. The condenser allows selective flow of condensate, condensed reactants or products back into the reaction unit chamber. The condenser can be maintained within a temperature range to allow selective flow of condensate back to the reaction unit chamber. Flow can be by means of active or passive delivery, such as by pumping or by gravity flow, respectively. In one embodiment, the condenser may include means to prevent particles, such as gallium or gallium oxide nanoparticles, from flowing from the reaction cell chamber into a vacuum system, such as at least one of a filter, a Z-channel, and an electrostatic precipitator. In one embodiment, the vacuum pump may be cooled by means such as water or forced air cooling.

在例示性測試實施例中,反應單元腔室保持在約1托至20托之壓力範圍下,同時流動10 sccm之H2 且每分鐘噴射4 ml之H2 O,同時施加作用中真空泵抽。DC電壓為約28 V且DC電流為約1 kA。反應單元腔室為含有47 kg熔融鎵之具有9吋長度之邊緣的SS立方體。電極包含DC EM泵之1吋浸沒式SS噴嘴及包含4 cm直徑、1 cm厚W圓盤之相對電極,該圓盤具有由BN底座覆蓋之1 cm直徑引線。EM泵速率為約30至40 ml/s。鎵係正極化的且W底座電極係負極化的。SunCell®輸出功率為約150 kW,使用鎵及SS反應器之質量、比熱及溫度升高之乘積量測。In an exemplary test example, the reaction cell chamber was maintained at a pressure ranging from about 1 Torr to 20 Torr while flowing 10 seem of H 2 and sparging 4 ml of H 2 O per minute while applying active vacuum pumping. The DC voltage is about 28 V and the DC current is about 1 kA. The reaction cell chamber was an edged SS cube with a 9 inch length containing 47 kg of molten gallium. The electrodes consisted of a 1 inch submerged SS nozzle of a DC EM pump and an opposing electrode consisting of a 4 cm diameter, 1 cm thick W disk with a 1 cm diameter lead covered by a BN base. The EM pump rate is about 30 to 40 ml/s. The gallium is positively polarized and the W base electrode is negatively polarized. SunCell® has an output of approximately 150 kW, measured using the product of mass, specific heat and temperature rise of the gallium and SS reactors.

在一實施例中,反應混合物可包含添加劑,該添加劑包含諸如與氧氣及水中之至少一者反應的金屬或化合物之物種。添加劑可再生。再生可藉由SunCell®之至少一個系統達成。再生系統可包含熱、電漿及電解系統中之至少一者。可將添加劑添加至包含熔融銀之反應混合物中。在一實施例中,添加劑可包含可添加至包含熔融金屬之熔融銀的鎵。在一實施例中,水可供應至反應單元腔室。水可由噴射器供應。鎵可與供應至反應混合物之水反應以形成氫及鎵。氫可與充當低能量氫催化劑之一些殘餘HOH反應。氧化鎵可藉由電解系統再生。藉由電解系統還原之鎵金屬及氧氣可分別泵抽回至反應單元腔室並為電池抽空。In one embodiment, the reaction mixture may include additives including species such as metals or compounds that react with at least one of oxygen and water. Additives are renewable. Regeneration can be achieved by at least one system of SunCell®. The regeneration system can include at least one of thermal, plasma, and electrolysis systems. Additives can be added to the reaction mixture containing molten silver. In one embodiment, the additive may comprise gallium which may be added to molten silver comprising molten metal. In one embodiment, water may be supplied to the reaction unit chamber. Water can be supplied by a sprayer. Gallium can react with water supplied to the reaction mixture to form hydrogen and gallium. Hydrogen can react with some residual HOH that acts as a low energy hydrogen catalyst. Gallium oxide can be regenerated by an electrolysis system. The gallium metal and oxygen reduced by the electrolysis system can be pumped back to the reaction cell chamber and evacuated the cell, respectively.

在一實施例中,可將氫氣添加至反應混合物以消除藉由噴射之水與鎵之反應形成的氧化鎵膜。反應單元腔室中之氫氣可在約0.1托至100 atm、1托至1 atm及1托至10托之至少一個壓力範圍內。氫氣可以至少在約0.001 sccm至10公升/分鐘、0.001 sccm至10公升/分鐘及0.001 sccm至10公升/分鐘之範圍內以每公升反應單元腔室體積某一速率流動至反應單元腔室中。In one embodiment, hydrogen gas may be added to the reaction mixture to eliminate the gallium oxide film formed by the reaction of the sprayed water and gallium. The hydrogen gas in the reaction unit chamber may be in at least one pressure range of about 0.1 Torr to 100 atm, 1 Torr to 1 atm, and 1 Torr to 10 Torr. Hydrogen may flow into the reaction unit chamber at a rate per liter of reaction unit chamber volume at least in the range of about 0.001 seem to 10 liters/min, 0.001 seem to 10 liters/min, and 0.001 seem to 10 liters/min.

在一實施例中,氫可充當催化劑。將nH (n為整數)供應為催化劑及H原子以形成低能量氫之氫來源可包含可經由EM泵管5k4壁中之諸如Pd或Pd-Ag的氫滲透膜使用質量流量控制器以控制來自高壓水電解劑之氫流來供應的H2 氣體,該氫滲透膜諸如23% Ag/77% Pd合金隔膜。使用氫作為HOH催化劑之替代的催化劑可避免諸如碳反應單元腔室5b31之至少一個電池組件之氧化反應。反應單元腔室中所保持之電漿可解離H2 以提供H原子。碳可包含熱碳以抑制碳與氫之間的反應。In one embodiment, hydrogen can act as a catalyst. A source of hydrogen supplying nH (n is an integer) as catalyst and H atoms to form low energy hydrogen can include the use of a mass flow controller through a hydrogen permeable membrane such as Pd or Pd-Ag in the walls of the EM pump tube 5k4 to control the flow of hydrogen flow of high-pressure water to the decomposing agent supplied H 2 gas, the hydrogen permeable membrane such as 23% Ag / 77% Pd alloy membrane. The use of hydrogen as an alternative catalyst to the HOH catalyst can avoid oxidation reactions of at least one cell component such as the carbon reaction unit chamber 5b31. A reaction chamber held unit of plasma can be dissociated to provide H 2 H atoms. The carbon may contain thermal carbon to inhibit the reaction between carbon and hydrogen.

固體燃料 SunCell ® 在一實施例中,SunCell®包含固體燃料,該固體燃料反應以形成至少一種反應物以形成低能量氫。低能量氫反應物可包含原子H及催化劑以形成低能量氫。催化劑可包含初生水、HOH。反應物可在SunCell®中至少部分地原位再生。固體燃料可藉由反應單元腔室5b31中之電漿或熱驅動反應再生。再生可藉由經保持及釋放在反應單元腔室5b31中的電漿及熱功率中之至少一者達成。固體燃料反應物可藉由供應在形成低能量氫或包含低能量氫之產物(諸如較低能量氫化合物及物質組合物)中消耗之元素來源來再生。SunCell®可包含H及氧來源中之至少一者以在SunCell®中之低能量氫反應之傳播期間替換固體燃料之任何損失。H及O中之至少一者之來源可包含H2 、H2 O及O2 中之至少一者。在例示性再生實施例中,經消耗以形成H2 (1/4)之H2 由添加H2 及H2O中之至少一者替換,其中H2 O可進一步充當HOH催化劑及O2 中之至少一者之來源。最佳地,CO2 及稀有氣體(諸如氬氣)中之至少一者可為反應混合物之組分,其中CO2 可充當氧來源以形成HOH催化劑。In a solid fuel SunCell ® embodiment, SunCell® comprising the solid fuel, the solid fuel to form at least one reactant to form a low energy hydrogen. The low energy hydrogen reactant may comprise atomic H and a catalyst to form low energy hydrogen. The catalyst may contain nascent water, HOH. Reactants can be at least partially regenerated in situ in SunCell®. The solid fuel can be regenerated by plasma or thermally driven reactions in the reaction unit chamber 5b31. Regeneration can be achieved by at least one of plasma and thermal power held and released in the reaction cell chamber 5b31. Solid fuel reactants can be regenerated by supplying a source of elements that are consumed in forming low energy hydrogen or products comprising low energy hydrogen, such as lower energy hydrogen compounds and compositions of matter. SunCell® may include at least one of a source of H and oxygen to replace any loss of solid fuel during propagation of low energy hydrogen reactions in SunCell®. H, and O in the at least one of the sources may include H 2, H 2 O and O 2 in the at least one. In an exemplary embodiment, regeneration, the H 2 consumed to form the (1/4) of one is replaced by H 2 H 2 is added in the least and H2O, wherein H 2 O HOH may further act as a catalyst in the at least O 2 and source of one. Optimally, CO 2, and a rare gas (such as argon) may be at least one of the components of the reaction mixtures, wherein the CO 2 may act as a source of oxygen to form a catalyst HOH.

在一實施例中,SunCell®進一步包含電解池以自反應單元腔室中形成之任何產物再生至少一種起始材料中之至少一些。起始材料可包含固體燃料之反應物中之至少一者,其中產物可藉由固體燃料反應形成以形成低能量氫反應物。起始材料可包含熔融金屬,諸如鎵或銀。在一實施例中,熔融金屬不與熔融金屬反應。例示性非反應性熔融金屬包含銀。電解池可包含儲集器5c、反應單元腔室5b31及儲集器5c及反應單元腔室5b31中之至少一者外部的分離腔室中之至少一者。電解池可包含至少(i)兩個電極;(ii)用於單獨腔室之入口及出口通道及輸送器;(iii)可包含熔融金屬及在儲集器、反應單元腔室及單獨腔室中之至少一者中的反應物及產物中之至少一者的電解質;(iv)電解電源供應器;以及(v)用於電解之控制器及用於在適用時進入及離開電解池之輸送器之控制器及電源。輸送器可包含本發明之輸送器。In one embodiment, the SunCell® further comprises an electrolytic cell to regenerate at least some of the at least one starting material from any product formed in the reaction cell chamber. The starting material can comprise at least one of the reactants of the solid fuel, wherein the product can be formed by reacting the solid fuel to form a low energy hydrogen reactant. The starting material may comprise molten metal such as gallium or silver. In one embodiment, the molten metal does not react with the molten metal. Exemplary non-reactive molten metals include silver. The electrolytic cell may include reservoir 5c, reaction unit chamber 5b31, and at least one of a separation chamber external to at least one of reservoir 5c and reaction unit chamber 5b31. The electrolytic cell may contain at least (i) two electrodes; (ii) inlet and outlet channels and conveyors for separate chambers; (iii) may contain molten metal and a the electrolyte of at least one of the reactants and the products in at least one of them; (iv) an electrolysis power supply; and (v) a controller for electrolysis and a conveyor for entering and leaving the electrolysis cell, as applicable controller and power supply. The conveyor may comprise the conveyor of the present invention.

在一實施例中,固體燃料反應形成H2 O及H作為產物或中間反應產物。H2 O可充當催化劑以形成低能量氫。反應物包含至少一種氧化劑及一種還原劑,且反應包含至少一種氧化還原反應。還原劑可包含諸如鹼金屬之金屬。反應混合物可進一步包含氫來源及H2 O來源,且可視情況包含載體,諸如碳、碳化物、硼化物、氮化物、諸如TiCN之甲腈,或腈。載體可包含金屬粉末。H來源可選自本發明之鹼、鹼土、過渡、內過渡、稀土氫化物及氫化物之群組。氫來源可為氫氣,其可進一步包含解離劑,諸如本發明之解離劑,諸如載體上之貴金屬,諸如碳或氧化鋁及本發明之其他貴金屬。水源可包含脫水之化合物,諸如氫氧化物或氫氧化物錯合物,諸如Al、Zn、Sn、Cr、Sb及Pb之氫氧化物錯合物。水源可包含氫來源及氧來源。氧來源可包含含氧化合物。例示性化合物或分子為O2 、鹼或鹼土氧化物、過氧化物或超氧化物、TeO2 、SeO2 、PO2 、P2 O5 、SO2 、SO3 、M2 SO4 、MHSO4 、CO2 、M2 S2 O8 、MMnO4 、M2 Mn2 O4 、Mx Hy PO4 (x、y=整數)、POBr2 、MClO4 、MNO3 、NO、N2 O、NO2 、N2 O3 、Cl2 O7 及O2 (M=鹼金屬;且鹼土或其他陽離子可取代M)。其他例示性反應物包含選自以下群組之反應劑:Li、LiH、LiNO3 、LiNO、LiNO2 、Li3 N、Li2 NH、LiNH2 、LiX、NH3、LiBH4 、LiAlH4 、Li3 AlH6 、LiOH、Li2 S、LiHS、LiFeSi、Li2 CO3 、LiHCO3 、Li2 SO4 、LiHSO4 、Li3 PO4 、Li2 HPO4 、LiH2 PO4 、Li2 MoO4 、LiNbO3 、Li2 B4 O7 (四硼酸鋰)、LiBO2 、Li2 WO4 、LiAlCl4 、LiGaCl4 、Li2 CrO4 、Li2 Cr2 O7 、Li2 TiO3 、LiZrO3 、LiAlO2 、LiCoO2 、LiGaO2 、Li2 GeO3 、LiMn2 O4 、Li4 SiO4 、Li2 SiO3 、LiTaO3 、LiCuCl4 、LiPdCl4 、LiVO3 、LiIO3 、LiBrO3 、LiXO3 (X=F、Br、Cl、I)、LiFeO2 、LiIO4 、LiBrO4 、LiIO4 、LiXO4 (X=F、Br、Cl、I)、LiScOn 、LiTiOn 、LiVOn 、LiCrOn 、LiCr2 On 、LiMn2 On 、LiFeOn 、LiCoOn 、LiNiOn 、LiNi2 On 、LiCuOn 及LiZnOn ,其中n=1、2、3或4;氧陰離子、強酸之氧陰離子、氧化劑、分子氧化劑,諸如V2 O3 、I2 O5 、MnO2 、Re2 O7 、CrO3 、RuO2 、AgO、PdO、PdO2 、PtO、PtO2 、及NH4 X,其中X為硝酸鹽或CRC中給出之其他合適陰離子;以及還原劑。另一鹼金屬或其他陽離子可取代Li。額外氧來源可係選自以下各者之群組:MCoO2 、MGaO2 、M2 GeO3 、MMn2 O4 、M4 SiO4 、M2 SiO3 、MTaO3 、MVO3 、MIO3 、MFeO2 、MIO4 、MClO4 、MScOn 、MTiOn 、MVOn 、MCrOn 、MCr2 On 、MMn2 On 、MFeOn 、MCoOn 、MNiOn 、MNi2 On 、MCuOn 及MZnOn ,其中M為鹼金屬且n=1、2、3或4;氧陰離子、強酸之氧陰離子、氧化劑、分子氧化劑,諸如V2 O3 、I2 O5 、MnO2 、Re2 O7 、CrO3 、RuO2 、AgO、PdO、PdO2 、PtO、PtO2 、I2 O4 、I2 O5 、I2 O9 、SO2 、SO3 、CO2 、N2 O、NO、NO2 、N2 O3 、N2 O4 、N2 O5 、Cl2 O、ClO2 、Cl2 O3 、Cl2 O6 、Cl2 O7 、PO2 、P2 O3 及P2 O5 。反應物可呈形成低能量氫之任何所需比率。例示性反應混合物為0.33 g之LiH、1.7 g之LiNO3 及1 g之MgH2 與4 g之活化C粉末之混合物。形成反應H2 O催化劑及H2 中之至少一者的額外適合例示性反應提供於表1、2及3中。 表1.關於H2 O催化劑及H2 之熱可逆反應循環。[L.C.Brown,G.E.Besenbruch,K.R.Schultz,A.C.Marshall,S.K.Showalter,P.S.Pickard及J.F.Funk,使用熱化學分解水循環進行氫的核生產(Nuclear Production of Hydrogen Using Thermochemical Water-Splitting Cycles),將於2002年6月19日至13日在佛羅里達州好萊塢舉行的國際先進核電站大會(ICAPP)上提交的論文預印本,並在《會議記錄》上發表。]

Figure 02_image609
Figure 02_image611
Figure 02_image613
*T=熱化學,E=電化學。 表2.關於H2 O催化劑及H2 之熱可逆反應循環。[C.Perkins及A.W.Weimer,可再生氫氣之太陽能熱發電(Solar-Thermal Production of Renewable Hydrogen),AIChE期刊,55(2),(2009),第286至293頁。]
Figure 02_image615
Figure 02_image617
表3.關於H2 O催化劑及H2 之熱可逆反應循環。[S.Abanades,P.Charvin,G.Flamant,P.Neveu,對於太陽能集中制氫有潛在吸引力的分裂水熱化學循環篩選、Energy,31,(2006), 第2805-2822頁。]
Figure 02_image619
Figure 02_image621
Figure 02_image623
In one embodiment, the solid fuel to form H 2 O and H as a reaction product or intermediate product. H 2 O may act as a catalyst to form a low energy hydrogen. The reactants include at least one oxidizing agent and one reducing agent, and the reaction includes at least one redox reaction. The reducing agent may contain metals such as alkali metals. The reaction mixture may further comprise a source of hydrogen and a source of H 2 O, and optionally comprise a carrier, such as carbon, carbides, borides, nitrides, such as the TiCN-carbonitrile, or a nitrile. The carrier may contain metal powder. The source of H can be selected from the group of alkali, alkaline earth, transition, internal transition, rare earth hydrides and hydrides of the present invention. The source of hydrogen may be hydrogen, which may further comprise a dissociating agent, such as the dissociating agent of the present invention, such as a precious metal on a support, such as carbon or alumina, and other precious metals of the present invention. The water source may comprise dehydrated compounds, such as hydroxides or hydroxide complexes, such as hydroxide complexes of Al, Zn, Sn, Cr, Sb, and Pb. The water source may include a hydrogen source and an oxygen source. The oxygen source may comprise oxygenates. Exemplary compounds or molecules are O 2 , alkali or alkaline earth oxides, peroxides or superoxides, TeO 2 , SeO 2 , PO 2 , P 2 O 5 , SO 2 , SO 3 , M 2 SO 4 , MHSO 4 , CO 2, M 2 S 2 O 8, MMnO 4, M 2 Mn 2 O 4, M x H y PO 4 (x, y = integers), POBr 2, MClO 4, MNO 3, NO, N 2 O, NO 2 , N 2 O 3 , Cl 2 O 7 and O 2 (M=alkali metal; and alkaline earth or other cations may replace M). Other exemplary reactant comprises a reactant selected from the group of: Li, LiH, LiNO 3, LiNO, LiNO 2, Li 3 N, Li 2 NH, LiNH 2, LiX, NH3, LiBH 4, LiAlH 4, Li 3 AlH 6 , LiOH, Li 2 S, LiHS, LiFeSi, Li 2 CO 3 , LiHCO 3 , Li 2 SO 4 , LiHSO 4 , Li 3 PO 4 , Li 2 HPO 4 , LiH 2 PO 4 , Li 2 MoO 4 , LiNbO 3. Li 2 B 4 O 7 (lithium tetraborate), LiBO 2 , Li 2 WO 4 , LiAlCl 4 , LiGaCl 4 , Li 2 CrO 4 , Li 2 Cr 2 O 7 , Li 2 TiO 3 , LiZrO 3 , LiAlO 2 , LiCoO 2 , LiGaO 2 , Li 2 GeO 3 , LiMn 2 O 4 , Li 4 SiO 4 , Li 2 SiO 3 , LiTaO 3 , LiCuCl 4 , LiPdCl 4 , LiVO 3 , LiIO 3 , LiBrO 3 , LiXO 3 (X= F, Br, Cl, I) , LiFeO 2, LiIO 4, LiBrO 4, LiIO 4, LiXO 4 (X = F, Br, Cl, I), LiScO n, LiTiO n, LiVO n, LiCrO n, LiCr 2 O n, LiMn 2 O n, LiFeO n, LiCoO n, LiNiO n, LiNi 2 O n, LiCuO n and LiZnO n, where n = 1,2,3 or 4; oxyanion, oxyanion of a strong acid, an oxidant, the oxidant molecules , such as V 2 O 3 , I 2 O 5 , MnO 2 , Re 2 O 7 , CrO 3 , RuO 2 , AgO, PdO, PdO 2 , PtO, PtO 2 , and NH 4 X, where X is nitrate or CRC Other suitable anions are given in; and reducing agents. Another alkali metal or other cation can replace Li. The additional oxygen source may be selected from the group of: MCoO 2 , MGaO 2 , M 2 GeO 3 , MMn 2 O 4 , M 4 SiO 4 , M 2 SiO 3 , MTaO 3 , MVO 3 , MIO 3 , MFeO 2, MIO 4, MClO 4, MScO n, mTiO n, MVO n, MCrO n, MCr 2 O n, MMn 2 O n, MFeO n, MCoO n, MNiO n, MNi 2 O n, MCuO n and MZnO n, wherein M is an alkali metal and n=1, 2, 3 or 4; oxyanions, oxyanions of strong acids, oxidizing agents, molecular oxidizing agents such as V 2 O 3 , I 2 O 5 , MnO 2 , Re 2 O 7 , CrO 3 , RuO 2 , AgO, PdO, PdO 2 , PtO, PtO 2 , I 2 O 4 , I 2 O 5 , I 2 O 9 , SO 2 , SO 3 , CO 2 , N 2 O, NO, NO 2 , N 2 O 3, N 2 O 4 , N 2 O 5, Cl 2 O, ClO 2, Cl 2 O 3, Cl 2 O 6, Cl 2 O 7, PO 2, P 2 O 3 and P 2 O 5. The reactants can be in any desired ratio to form low energy hydrogen. An exemplary reaction mixture is a mixture of 0.33 g of LiH, 1.7 g of LiNO 3 and 1 g of MgH 2 and 4 g of activated C powder. Forming additional reaction H 2 O and H 2 in the catalyst is at least one suitable exemplary reaction provided in Tables 1, 2 and 3. Table 1. Thermal and H 2 on a catalyst H 2 O The reaction of the reversible cycle. [LCBrown, GEBesenbruch, KRSchultz, ACMarshall, SK Showalter, PSPickard and JFFunk, Nuclear Production of Hydrogen Using Thermochemical Water-Splitting Cycles, 19-13 June 2002 at Preprint of paper presented at the International Conference on Advanced Nuclear Power Plants (ICAPP) in Hollywood, FL and published in Proceedings. ]
Figure 02_image609
Figure 02_image611
Figure 02_image613
*T=thermochemical, E=electrochemical. Table 2. Thermal and H 2 O on catalyst cycle reversible reaction of H 2. [C. Perkins and AW Weimer, Solar-Thermal Production of Renewable Hydrogen, AIChE Journal, 55(2), (2009), pp. 286-293. ]
Figure 02_image615
Figure 02_image617
Table 3. Thermal and H 2 on a catalyst H 2 O The reaction of the reversible cycle. [S. Abanades, P. Charvin, G. Flamant, P. Neveu, Screening of potentially attractive split hydrothermal chemical cycles for concentrated solar hydrogen production, Energy, 31, (2006), pp. 2805-2822. ]
Figure 02_image619
Figure 02_image621
Figure 02_image623

形成H2 O催化劑之反應物可包含O來源,諸如O物種,及H來源。O物種之來源可包含O2 、空氣以及包含O的化合物或化合物之混雜物中之至少一者。包含氧之化合物可包含氧化劑。包含氧之化合物可包含氧化物、氧(氫氧)化物、氫氧化物、過氧化物及超氧化物中之至少一者。適合的例示性金屬氧化物為:鹼金屬氧化物,諸如Li2 O、Na2 O及K2 O;鹼土金屬氧化物,諸如MgO、CaO、SrO及BaO;過渡氧化物,諸如NiO、Ni2 O3 、FeO、Fe2 O3 及CoO;及內過渡及稀土金屬氧化物;以及其他金屬及類金屬之氧化物,諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te之氧化物;以及包含氧之此等及其他元素之混合物。氧化物可包含氧化物陰離子,諸如本發明之氧化物陰離子,諸如金屬氧化物陰離子及陽離子,諸如鹼、鹼土、過渡、內過渡及稀土金屬陽離子;及其他金屬及類金屬之氧化物陰離子,諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te之氧化物陰離子,諸如MM'2x O3x + 1 或MM'2x O4 (M=鹼土,M'=諸如Fe或Ni或Mn之過渡金屬,x=整數)及M2 M'2x O3x + 1 或M2 M'2x O4 (M=鹼金屬,M'=諸如Fe或Ni或Mn之過渡金屬,x=整數)。適合例示性金屬氧(氫氧)化物為AlO(OH)、ScO(OH)、YO(OH)、VO(OH)、CrO(OH)、MnO(OH) (

Figure 02_image625
-MnO(OH)錳榍石及
Figure 02_image627
-MnO(OH)亞錳酸鹽)、FeO(OH)、CoO(OH)、NiO(OH)、RhO(OH)、GaO(OH)、InO(OH)、Ni1 / 2 Co1 / 2 O(OH)及Ni1 / 3 Co1 / 3 Mn1 / 3 O(OH)。適合的例示性氫氧化物為諸如鹼、鹼土、過渡、內過渡及稀土金屬之金屬之氫氧化物及其他金屬及類金屬,諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te之氫氧化物,及混合物。適合的錯離子氫氧化物為Li2 Zn(OH)4 ,Na2 Zn(OH)4 ,Li2 Sn(OH)4 ,Na2 Sn(OH)4 ,Li2 Pb(OH)4 ,Na2 Pb(OH)4 ,LiSb(OH)4 ,NaSb(OH)4 ,LiAl(OH)4 ,NaAl(OH)4 ,LiCr(OH)4 ,NaCr(OH)4 ,Li2 Sn(OH)6 及Na2 Sn(OH)6 。額外的例示性適合氫氧化物為來自Co(OH)2 ,Zn(OH)2 ,Ni(OH)2 ,其他過渡金屬氫氧化物,Cd(OH)2 ,Sn(OH)2 及Pb(OH)之至少一者。適合的例示性過氧化物為H2 O2 、有機化合物之過氧化物及金屬之過氧化物(諸如M2 O2 ,其中M為鹼金屬,諸如Li2 O2 、Na2 O2 、K2 O2 )、其他離子過氧化物(諸如鹼土金屬過氧化物,諸如Ca、Sr或Ba過氧化物)、其他正電性金屬之過氧化物(諸如鑭系元素之過氧化物)及共價金屬過氧化物(諸如Zn、Cd及Hg之過氧化物)。適合的例示性超氧化物為金屬MO2 之超氧化物,其中M為鹼金屬,諸如NaO2 、KO2 、RbO2 及CsO2 ,及鹼土金屬超氧化物。在一實施例中,固體燃料包含鹼金屬過氧化物及氫來源,諸如氫化物、烴或氫儲存材料,諸如BH3 NH3 。反應混合物可包含氫氧化物,諸如以下之氫氧化物:鹼、鹼土、過渡、內過渡及稀土金屬,以及Al、Ga、In、Sn、Pb及形成氫氧化物及氧來源,諸如包含諸如碳酸根之至少一個氧陰離子之化合物的其他元素,諸如包含鹼、鹼土、過渡、內過渡及稀土金屬,以及Al、Ga、In、Sn、Pb之氫氧化物及本發明之其他氫氧化物。包含氧之其他適合化合物為以下之群組之氧陰離子化合物中之至少一者:鋁酸鹽、鎢酸鹽、鋯酸鹽、鈦酸鹽、硫酸鹽、磷酸鹽、碳酸鹽、硝酸鹽、鉻酸鹽、重鉻酸鹽及錳酸鹽、氧化物、氧(氫氧)化物、過氧化物、超氧化物、矽酸鹽、鈦酸鹽、鎢酸鹽及本發明之其他化合物。氫氧化物與碳酸鹽之例示性反應藉由以下給出: Ca(OH)2 + Li2 CO3 至CaO + H2 O + Li2 O + CO2 (60)H 2 O forming reaction catalyst may comprise the source of O, species such as O, H, and source. O source may comprise species of O 2, air, and the blend comprising the compound or compounds of at least one of O's. The oxygen-containing compound may contain an oxidizing agent. The oxygen-containing compound may contain at least one of oxides, oxygen (hydroxides), hydroxides, peroxides, and superoxides. Exemplary of suitable metal oxide: alkali metal oxide, such as Li 2 O, Na 2 O and K 2 O; alkaline earth metal oxides, such as MgO, CaO, SrO and of BaO; transition oxides, such as NiO, Ni 2 O 3, FeO, Fe 2 O 3 and of CoO; and the transition and rare earth metal oxide; and the other metals and metal oxides, such as Al, Ga, In, Si, Ge, Sn, Pb, as, Sb, Oxides of Bi, Se and Te; and mixtures of these and other elements containing oxygen. Oxides may comprise oxide anions, such as the oxide anions of the present invention, such as metal oxide anions and cations, such as alkali, alkaline earth, transition, inner transition, and rare earth metal cations; and oxide anions of other metals and metalloids, such as al, Ga, In, Si, Ge, Sn, Pb, as, Sb, Bi, Se , and Te of the oxide anion, such as MM '2x O 3x + 1 or MM' 2x O 4 (M = alkaline earth, M '= such as Fe or a transition metal Ni or Mn,, x = an integer) and M 2 M '2x O 3x + 1 or M 2 M' 2x O 4 ( M = an alkali metal, M '= such as Fe or Ni or a transition metal Mn, , x = integer). Suitable exemplary metal oxygen (hydroxide) compounds are AlO(OH), ScO(OH), YO(OH), VO(OH), CrO(OH), MnO(OH) (
Figure 02_image625
-MnO(OH) manganese sphene and
Figure 02_image627
-MnO(OH) manganite), FeO(OH), CoO(OH), NiO(OH), RhO(OH), GaO(OH), InO(OH), Ni 1 / 2 Co 1 / 2 O (OH) and Ni 1 / 3 Co 1 / 3 Mn 1 / 3 O(OH). Suitable exemplary hydroxides are hydroxides of metals such as alkali, alkaline earth, transition, inner transition and rare earth metals and other metals and metalloids such as Al, Ga, In, Si, Ge, Sn, Pb, As, Hydroxides of Sb, Bi, Se and Te, and mixtures. Suitable anion hydroxides are Li 2 Zn(OH) 4 , Na 2 Zn(OH) 4 , Li 2 Sn(OH) 4 , Na 2 Sn(OH) 4 , Li 2 Pb(OH) 4 , Na 2 Pb(OH) 4 , LiSb(OH) 4 , NaSb(OH) 4 , LiAl(OH) 4 , NaAl(OH) 4 , LiCr(OH) 4 , NaCr(OH) 4 , Li 2 Sn(OH) 6 and Na 2 Sn(OH) 6 . Additional exemplary suitable hydroxides are from Co(OH) 2 , Zn(OH) 2 , Ni(OH) 2 , other transition metal hydroxides, Cd(OH) 2 , Sn(OH) 2 and Pb(OH) ) at least one. Suitable exemplary peroxides are H 2 O 2 , peroxides of organic compounds and peroxides of metals such as M 2 O 2 where M is an alkali metal such as Li 2 O 2 , Na 2 O 2 , K 2 O 2 ), other ionic peroxides (such as alkaline earth metal peroxides such as Ca, Sr or Ba peroxides), other electropositive metal peroxides (such as lanthanide peroxides) and co- Valence metal peroxides (such as peroxides of Zn, Cd and Hg). Exemplary of suitable metal superoxide MO 2 of superoxide, wherein M is an alkali metal, such as NaO 2, KO 2, RbO 2 and CsO 2, an alkaline earth metal and superoxide. In one embodiment, the solid fuel comprising hydrogen peroxide and a source of an alkali metal, such as a hydride, hydrogen storage material, or a hydrocarbon, such as BH 3 NH 3. The reaction mixture may contain hydroxides such as those of alkali, alkaline earth, transition, inner transition and rare earth metals, as well as Al, Ga, In, Sn, Pb and forming hydroxides and sources of oxygen such as those containing carbonic acid Other elements of compounds of at least one oxyanion of the root, such as alkali, alkaline earth, transition, inner transition and rare earth metals, and hydroxides of Al, Ga, In, Sn, Pb and other hydroxides of the invention. Other suitable compounds containing oxygen are at least one of the oxyanion compounds of the following group: aluminates, tungstates, zirconates, titanates, sulfates, phosphates, carbonates, nitrates, chromium Salts, dichromates and manganates, oxides, oxygen (hydroxides), peroxides, superoxides, silicates, titanates, tungstates and other compounds of the invention. Exemplary reactions of hydroxides and carbonates are given by: Ca(OH) 2 + Li 2 CO 3 to CaO + H 2 O + Li 2 O + CO 2 (60)

在其他實施例中,氧來源為氣態或容易形成氣體,諸如NO2 、NO、N2 O、CO2 、P2 O3 、P2 O5 及SO2 。來自H2 O催化劑(諸如C、N、NH3 、P或S)形成之經還原氧化物產物可藉由用氧氣或其來源燃燒而再次轉化回氧化物,如Mills先前申請案中所給出。電池可產生可用於加熱應用之餘熱,或熱可藉由諸如朗肯或布雷頓系統之方式轉化成電力。替代地,電池可用於合成較低能氫物種,諸如分子低能量氫及低能量氫氫化物離子及對應化合物。In other embodiments, the oxygen source is a gaseous or readily forming gas, such as NO 2, NO, N 2 O , CO 2, P 2 O 3, P 2 O 5 and SO 2. Reduced oxide products formed from H 2 O catalysts such as C, N, NH 3 , P or S can be converted back to oxides again by combustion with oxygen or a source thereof, as given in the Mills previous application . Batteries can generate waste heat that can be used for heating applications, or the heat can be converted into electricity by means such as Rankine or Brayton systems. Alternatively, batteries can be used to synthesize lower energy hydrogen species, such as molecular low energy hydrogen and low energy hydrogen hydride ions and corresponding compounds.

在一實施例中,形成用於較低能氫物種及化合物之產生及能量之產生中之至少一者的低能量氫之反應混合物包含原子氫來源及催化劑來源,其包含H及O中之至少一者,諸如本發明之催化劑,諸如H2 O催化劑。反應混合物可進一步包含酸,諸如H2 SO3 、H2 SO4 、H2 CO3 、HNO2 、HNO3 、HClO4 、H3 PO3 及H3 PO4 ,或酸來源,諸如酸酐或無水酸。後者可包含SO2 、SO3 、CO2 、NO2 、N2 O3 、N2 O5 、Cl2 O7 、PO2 、P2 O3 及P2 O5 之群組中之至少一者。反應混合物可包含鹼及鹼性酸酐中之至少一者,諸如M2 O(M=鹼金屬)、M'O(M'=鹼土金屬)、ZnO或其他過渡金屬氧化物、CdO、CoO、SnO、AgO、HgO或Al2 O3 。其他例示性酸酐包含對於H2 O穩定之金屬,諸如Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、Sn、W、Al、V、Zr、Ti、Mn、Zn、Cr及In。酸酐可為鹼金屬或鹼土金屬氧化物,且水合化合物可包含氫氧化物。反應混合物可包含氧(氫氧)化物,諸如FeOOH、NiOOH或CoOOH。反應混合物可包含H2 O來源及H2 O中之至少一者。H2 O可藉由在原子氫存在下之水合及脫水反應可逆地形成。形成H2 O催化劑之例示性反應為 Mg(OH)2 至MgO + H2 O                                                                                    (61) 2LiOH至Li2 O + H2 O                                                                                         (62) H2 CO3 至CO2 + H2 O                                                                                          (63) 2FeOOH至Fe2 O3 + H2 O                                                                                    (64)In one embodiment, the reaction mixture forming low energy hydrogen for at least one of the production of lower energy hydrogen species and compounds and the production of energy comprises a source of atomic hydrogen and a source of catalyst comprising at least one of H and O one catalyst of the present invention such as H 2 O as catalyst. The reaction mixture may further comprise an acid, such as H 2 SO 3, H 2 SO 4, H 2 CO 3, HNO 2, HNO 3, HClO 4, H 3 PO 3 and H 3 PO 4, or an acid source, such as an acid anhydride or anhydrous acid. The latter may comprise at least one of the group of SO 2 , SO 3 , CO 2 , NO 2 , N 2 O 3 , N 2 O 5 , Cl 2 O 7 , PO 2 , P 2 O 3 and P 2 O 5 . The reaction mixture may comprise a base and a basic anhydride is at least one, such as M 2 O (M = alkali metal), M'O (M '= alkaline earth metals), ZnO, or other transition metal oxides, CdO, CoO, SnO , AgO, HgO or Al 2 O 3 . Other exemplary acid anhydride comprising for H 2 O and stability of the metal, such as Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os, Pd, Re, Rh, Ru, Se, Ag, Tc, Te, Tl, Sn, W, Al, V, Zr, Ti, Mn, Zn, Cr and In. The acid anhydride may be an alkali metal or alkaline earth metal oxide, and the hydrated compound may contain a hydroxide. The reaction mixture may contain oxygen (hydroxide) compounds such as FeOOH, NiOOH or CoOOH. The reaction mixture may comprise a source of H 2 O and H 2 O in the at least one. H 2 O is reversibly may be formed by the hydration and dehydration reaction in the presence of atomic hydrogen. Formation of H 2 O exemplary catalysts of as Mg (OH) 2 to MgO + H 2 O (61) 2LiOH to Li 2 O + H 2 O ( 62) H 2 CO 3 to CO 2 + H 2 O (63 ) 2FeOOH to Fe 2 O 3 + H 2 O (64)

在一實施例中,H2 O催化劑藉由至少一種化合物之脫水形成,該化合物包含磷酸鹽,諸如磷酸鹽、磷酸氫及磷酸二氫鹽之鹽,諸如陽離子之彼等化合物,該等陽離子諸如包含金屬之陽離子,諸如鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬;及其他金屬及類金屬之彼等化合物,諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te之彼等化合物;及形成縮合磷酸鹽之混合物,諸如以下中之至少一者:多磷酸鹽,諸如

Figure 02_image629
;長鏈偏磷酸鹽。諸如
Figure 02_image631
;環狀偏磷酸鹽,諸如
Figure 02_image633
,其中n≥3;以及超磷酸鹽,諸如P4 O10 。例示性反應為
Figure 02_image635
In one embodiment, H 2 O by the catalyst is formed of at least one compound of dehydration, the compound comprises a phosphate, such as phosphate, hydrogen phosphate and dihydrogen salts of phosphoric acid, such as a cation of their compounds, such as cationic Cations containing metals, such as alkali metals, alkaline earth metals, transition metals, inner transition metals, and rare earth metals; and other metals and their compounds of metalloids, such as Al, Ga, In, Si, Ge, Sn, Pb, As, Those compounds of Sb, Bi, Se, and Te; and mixtures forming condensed phosphates, such as at least one of the following: polyphosphates, such as
Figure 02_image629
; long chain metaphosphates. such as
Figure 02_image631
; cyclic metaphosphates such as
Figure 02_image633
, where n≧3; and superphosphates, such as P 4 O 10 . An exemplary response is
Figure 02_image635

脫水反應之反應物可包含可包含Al(OH)3 及Al2 O3 中之至少一者的R-Ni。反應物可進一步包含金屬M,諸如本發明之金屬M,諸如鹼金屬、金屬氫化物MH、金屬氫氧化物(諸如本發明之金屬氫氧化物,諸如鹼金屬氫氧化物)及氫來源(諸如H2 )以及固有氫。例示性反應為 2Al(OH)3 +至Al2 O3 + 3H2 O                                                                             (67) Al2 O3 + 2NaOH至2NaAlO2 + H2 O                                                                   (68) 3MH + Al(OH)3 +至M3 Al + 3H2 O                                                                    (69) MoCu + 2MOH + 4O2 至M2 MoO4 + CuO + H2 O (M = Li、Na、K、Rb、Cs)      (70)The reactants of the dehydration reaction may include R-Ni which may include at least one of Al(OH) 3 and Al 2 O 3 . The reactants may further comprise a metal M, such as a metal M of the present invention, such as an alkali metal, a metal hydride MH, a metal hydroxide (such as a metal hydroxide of the present invention, such as an alkali metal hydroxide), and a source of hydrogen (such as H 2 ) and inherent hydrogen. Exemplary reactions are 2Al(OH) 3 + to Al 2 O 3 + 3H 2 O (67) Al 2 O 3 + 2NaOH to 2NaAlO 2 + H 2 O (68) 3MH + Al(OH) 3 + to M 3 Al + 3H 2 O (69) MoCu + 2MOH + 4O 2 to M 2 MoO 4 + CuO + H 2 O (M = Li, Na, K, Rb, Cs) (70)

反應產物可包含合金。R-Ni可藉由再水合再生。反應混合物及形成H2 O催化劑之脫水反應可包含且涉及氧(氫氧)化物,諸如例示性反應中所給出之本發明之氧(氫氧)化物: 3Co(OH)2 至2CoOOH + Co + 2H2 O                                                                 (71)The reaction product may comprise an alloy. R-Ni can be regenerated by rehydration. The reaction mixture and formed H 2 O dehydration reaction to catalyst may comprise and involves oxygen (hydroxyl) compound, oxide of the present invention illustrating exemplary reactions such embodiments given in the (hydroxyl) compound: 3Co (OH) 2 to 2CoOOH + Co + 2H 2 O (71)

原子氫可由H2 氣體藉由解離形成。氫解離劑可為本發明之解離劑中之一者,諸如R-Ni或載體上之貴金屬或過渡金屬,諸如碳或Al2 O3 上之Ni或Pt或Pd。替代地,原子H可來自H滲透通過諸如本發明之隔膜的隔膜。在一實施例中,電池包含諸如陶瓷隔膜之隔膜以允許H2 選擇性地擴散通過,同時防止H2 O擴散。在一實施例中,H2 及原子H中之至少一者藉由電解包含氫來源之電解質(諸如包含H2 O之水性或熔融電解質)而供應至電池。在一實施例中,H2 O催化劑藉由酸或鹼脫水至酸酐形式而可逆地形成。在一實施例中,形成催化劑H2 O及低能量氫之反應係藉由改變電池pH或活性、溫度及壓力中之至少一者而傳播,其中壓力可藉由改變溫度而改變。諸如酸、鹼或酸酐之物種的活性可藉由添加如熟習此項技術者已知的鹽來改變。在一實施例中,反應混合物可包含諸如碳之材料,其可吸收或為諸如H2 之氣體或用於形成低能量氫之反應的酸酐氣體的來源。反應物可呈任何所需濃度及比率。反應混合物可為熔融的或包含含水漿料。Atomic hydrogen H 2 gas may be formed by dissociation. Hydrogen dissociation agent solution of the present invention may be from one of those agents, the noble metal or transition metal, such as R-Ni or carriers, such as carbon, or of the Al 2 O 3 Ni or Pt or Pd. Alternatively, atomic H may come from H permeation through a membrane such as the membrane of the present invention. In one embodiment, a battery separator comprising a ceramic membrane such as to allow the selective diffusion through H 2, H 2 O while preventing diffusion. In one embodiment, at least one of H 2 and atomic H is supplied to the cell by electrolysis of an electrolyte comprising a source of hydrogen, such as an aqueous or molten electrolyte comprising H 2 O. In one embodiment, H 2 O dehydration catalyst by an acid or base to form an anhydride formed reversibly. In one embodiment, the formed H 2 O, and the reaction of the hydrogen-based energy low catalyst activity by changing the pH or the battery, the temperature and pressure in at least one of the spread, wherein the pressure may be varied by varying the temperature. The activity of species such as acids, bases or anhydrides can be altered by adding salts as known to those skilled in the art. In one embodiment, the reaction mixture may comprise a material such as carbon, which can absorb a gas such as H 2 or as a source of acid anhydride, or a reaction gas is formed of a low-energy hydrogen. The reactants can be in any desired concentration and ratio. The reaction mixture may be molten or contain an aqueous slurry.

在另一實施例中,H2 O催化劑之來源為酸與鹼之間的反應,諸如氫鹵酸、硫酸、硝酸及亞硝酸中之至少一者與鹼之間的反應。其他適合的酸反應物為H2 SO4 、HCl、HX(X-鹵化物)、H3 PO4 、HClO4 、HNO3 、HNO、HNO2 、H2 S、H2 CO3 、H2 MoO4 、HNbO3 、H2 B4 O7 (M四硼酸鹽)、HBO2 、H2 WO4 、H2 CrO4 、H2 Cr2 O7 、H2 TiO3 、HZrO3 、MAlO2 、HMn2 O4 、HIO3 、HIO4 、HClO4 或諸如甲酸或乙酸之有機酸之水性溶液。適合的例示性鹼為氫氧化物、氧(氫氧)化物或氧化物,包含鹼、鹼土、過渡、內過渡或稀土金屬或Al、Ga、In、Sn或Pb。In another embodiment, the source of H 2 O catalyst of the reaction between acid and base, a reaction between the one with a base, such as a hydrohalic acid, sulfuric acid, nitric acid, and nitrous acid in the least. Other suitable acid reactant H 2 SO 4, HCl, HX (X- halide), H 3 PO 4, HClO 4, HNO 3, HNO, HNO 2, H 2 S, H 2 CO 3, H 2 MoO 4. HNbO 3 , H 2 B 4 O 7 (M tetraborate), HBO 2 , H 2 WO 4 , H 2 CrO 4 , H 2 Cr 2 O 7 , H 2 TiO 3 , HZrO 3 , MAlO 2 , HMn 2 O 4, HIO 3, HIO 4, HClO 4 aqueous solution or an organic acid such as formic acid or acetic acid. Suitable exemplary bases are hydroxides, oxygen (hydroxides) or oxides, including alkali, alkaline earth, transition, inner transition or rare earth metals or Al, Ga, In, Sn or Pb.

在一實施例中,反應物可包含分別與鹼或酸酐反應以分別形成H2 O催化劑,及鹼之陽離子與酸酐之陰離子或鹼性酸酐之陽離子與酸之陰離子的化合物的酸或鹼。酸酐SiO2 與鹼NaOH之例示性反應為 4NaOH + SiO2 至Na4 SiO4 + 2H2 O                                                                    (72) 其中對應酸之脫水反應為 H4 SiO4 至2H2 O + SiO2 (73)In one embodiment, the reactant can include a base or an acid anhydride are reacted with an acid or a base to form a compound of anionic anionic cationic cationic catalyst H 2 O, and a base of an alkaline or acid anhydride with an acid anhydride of the acid of each. An exemplary reaction of anhydride SiO 2 with base NaOH is 4NaOH + SiO 2 to Na 4 SiO 4 + 2H 2 O (72) wherein the dehydration reaction of the corresponding acid is H 4 SiO 4 to 2H 2 O + SiO 2 (73)

其他適合的例示性酸酐可包含元素、金屬、合金或混合物,諸如來自Mo、Ti、Zr、Si、Al、Ni、Fe、Ta、V、B、Nb、Se、Te、W、Cr、Mn、Hf、Co及Mg之群組的酸酐。對應氧化物可包含MoO2 、TiO2 、ZrO2 、SiO2 、Al2 O3 、NiO、Ni2 O3 、FeO、Fe2 O3 、TaO2 、Ta2 O5 、VO、VO2 、V2 O3 、V2 O5 、B2 O3 、NbO、NbO2 、Nb2 O5 、SeO2 、SeO3 、TeO2 、TeO3 、WO2 、WO3 、Cr3 O4 、Cr2 O3 、CrO2 、CrO3、MnO、Mn3 O4 、Mn2 O3 、MnO2 、Mn2 O7 、HfO2 、Co2 O3 、CoO、Co3 O4 、Co2 O3 及MgO中之至少一者。在例示性實施例中,鹼包含氫氧化物,諸如鹼金屬氫氧化物,諸如MOH(M=鹼金屬),諸如LiOH,其可形成對應鹼性氧化物,諸如M2 O,諸如Li2 O,及H2O。鹼性氧化物可與酸酐氧化物反應以形成產物氧化物。在釋放H2 O之情況下LiOH與酸酐氧化物之例示性反應中,產物氧化物化合物可包含Li2 MoO3 或Li2 MoO4 、Li2 TiO3 、Li2 ZrO3 、Li2 SiO3 、LiAlO2 、LiNiO2 、LiFeO2 、LiTaO3 、LiVO3 、Li2 B4 O7 、Li2 NbO3 、Li2 SeO3 、Li3 PO4 、Li2 SeO4 、Li2 TeO3 、Li2 TeO4 、Li2 WO4 、Li2 CrO4 、Li2 Cr2 O7 、Li2 MnO4 、Li2 HfO3 、LiCoO2 及MgO。其他適合的例示性氧化物為As2 O3 、As2 O5 、Sb2 O3 、Sb2 O4 、Sb2 O5 、Bi2 O3 、SO2 、SO3 、CO2 、NO2 、N2 O3 、N2 O5 、Cl2 O7 、PO2 、P2 O3 及P2 O5 及熟習此項技術者已知之其他類似氧化物之群組中之至少一者。另一實例藉由等式(91)給出。金屬氧化物之適合反應為 2LiOH + NiO至Li2 NiO2 + H2 O                                                                        (74) 3LiOH + NiO至LiNiO2 + H2 O + Li2 O + 1/2H2 (75) 4LiOH + Ni2 O3 至2Li2 NiO2 + 2H2 O + 1/2O2 (76) 2LiOH + Ni2 O3 至2LiNiO2 + H2 O                                                                     (77)Other suitable exemplary anhydrides may comprise elements, metals, alloys or mixtures such as those from Mo, Ti, Zr, Si, Al, Ni, Fe, Ta, V, B, Nb, Se, Te, W, Cr, Mn, Anhydrides of the group of Hf, Co and Mg. Corresponding oxides may include MoO 2 , TiO 2 , ZrO 2 , SiO 2 , Al 2 O 3 , NiO, Ni 2 O 3 , FeO, Fe 2 O 3 , TaO 2 , Ta 2 O 5 , VO, VO 2 , V 2 O 3 , V 2 O 5 , B 2 O 3 , NbO, NbO 2 , Nb 2 O 5 , SeO 2 , SeO 3 , TeO 2 , TeO 3 , WO 2 , WO 3 , Cr 3 O 4 , Cr 2 O 3. Any of CrO 2 , CrO 3 , MnO, Mn 3 O 4 , Mn 2 O 3 , MnO 2 , Mn 2 O 7 , HfO 2 , Co 2 O 3 , CoO, Co 3 O 4 , Co 2 O 3 and MgO at least one. In an exemplary embodiment, the base comprises a hydroxide, such as alkali metal hydroxides, such as MOH (M = alkali metal), such as LiOH, which may form the corresponding basic oxides, such as M 2 O, such as Li 2 O , and H2O. Basic oxides can react with anhydride oxides to form product oxides. In an exemplary reaction of LiOH and anhydride oxide with release of H 2 O, the product oxide compound may comprise Li 2 MoO 3 or Li 2 MoO 4 , Li 2 TiO 3 , Li 2 ZrO 3 , Li 2 SiO 3 , LiAlO 2 , LiNiO 2 , LiFeO 2 , LiTaO 3 , LiVO 3 , Li 2 B 4 O 7 , Li 2 NbO 3 , Li 2 SeO 3 , Li 3 PO 4 , Li 2 SeO 4 , Li 2 TeO 3 , Li 2 TeO 4. Li 2 WO 4 , Li 2 CrO 4 , Li 2 Cr 2 O 7 , Li 2 MnO 4 , Li 2 HfO 3 , LiCoO 2 and MgO. Other suitable exemplary oxides are As 2 O 3 , As 2 O 5 , Sb 2 O 3 , Sb 2 O 4 , Sb 2 O 5 , Bi 2 O 3 , SO 2 , SO 3 , CO 2 , NO 2 , N 2 O 3, N 2 O 5, Cl 2 O 7, PO 2, P 2 O 3 and P 2 O 5 and known to those skilled in the art of other similar groups in the oxide of at least one. Another example is given by equation (91). Suitable reactions for metal oxides are 2LiOH + NiO to Li 2 NiO 2 + H 2 O (74) 3LiOH + NiO to LiNiO 2 + H 2 O + Li 2 O + 1/2H 2 (75) 4LiOH + Ni 2 O 3 to 2Li 2 NiO 2 + 2H 2 O + 1/2O 2 (76) 2LiOH + Ni 2 O 3 to 2LiNiO 2 + H 2 O (77)

諸如Fe、Cr及Ti之其他過渡金屬、內過渡金屬及稀土金屬及其他金屬或類金屬(諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te)可取代Ni,且其他鹼金屬(諸如Li、Na、Rb及Cs)可取代K。在一實施例中,氧化物可包含Mo,其中在形成H2 O之反應期間,可形成進一步反應以形成低能量氫之初生H2 O催化劑及H。例示性固體燃料反應及可能的氧化還原路徑為

Figure 02_image637
Other transition metals such as Fe, Cr and Ti, inner transition metals and rare earth metals and other metals or metalloids such as Al, Ga, In, Si, Ge, Sn, Pb, As, Sb, Bi, Se and Te can be Ni is substituted, and other alkali metals such as Li, Na, Rb, and Cs can replace K. In one embodiment, the oxide may comprise Mo, which is formed during the reaction of H 2 O, may be further reacted to form a nascent form of low energy hydrogen and H 2 O Catalyst H. Exemplary solid fuel reactions and possible redox pathways are
Figure 02_image637

反應可進一步包含氫來源(諸如氫氣)及解離劑(諸如Pd/Al2 O3 )。氫可為氕、氘或氚或其組合中之任一者。形成H2O催化劑之反應可包含兩種氫氧化物形成水之反應。氫氧化物之陽離子可具有不同氧化態,諸如鹼金屬氫氧化物與過渡金屬或鹼土金屬氫氧化物之反應之彼等氧化態。反應混合物及反應可進一步包含且涉及來自源之H2 ,如例示性反應中所給出: LiOH + 2Co(OH)2 + 1/2H2 至LiCoO2 + 3H2 O + Co                                         (84)The reaction may further comprise a source of hydrogen (such as hydrogen) and dissociation agent (such as a Pd / Al 2 O 3). Hydrogen can be any of protium, deuterium, or tritium, or combinations thereof. The reaction to form the H2O catalyst may comprise the reaction of two hydroxides to form water. The cations of the hydroxides can have different oxidation states, such as those in the reaction of alkali metal hydroxides with transition metal or alkaline earth metal hydroxides. The reaction mixture and the reaction may further comprise from and to a source of H 2, as illustrated in exemplary reactions given: LiOH + 2Co (OH) 2 + 1 / 2H 2 to LiCoO 2 + 3H 2 O + Co (84)

反應混合物及反應可進一步包含且涉及金屬M,諸如例示性反應中所給出的鹼金屬或鹼土金屬: M + LiOH + Co(OH)2 至LiCoO2 + H2 O + MH                                                 (85)Reaction mixtures and reactions may further comprise and involve metals M, such as alkali or alkaline earth metals given in the exemplary reactions: M + LiOH + Co(OH) 2 to LiCoO 2 + H 2 O + MH (85)

在一實施例中,反應混合物包含金屬氧化物及氫氧化物,其可充當H來源且視情況充當另一H來源,其中金屬氧化物之諸如Fe之金屬可具有多種氧化態,使得其在反應期間經歷氧化還原反應以形成H2 O,從而充當與H反應以形成低能量氫之催化劑。實例為FeO,其中Fe2 + 可在反應期間經歷氧化成Fe3 + 以形成催化劑。例示性反應為 FeO + 3LiOH至H2 O + LiFeO2 + H(1/p) + Li2 O                                               (86)In one embodiment, the reaction mixture includes metal oxides and hydroxides, which can serve as a source of H and, optionally, another source of H, wherein a metal such as Fe of the metal oxide can have multiple oxidation states such that it reacts undergo a redox reaction to form H 2 O during, acting as a catalyst for reaction with H to form the low energy hydrogen. Examples of FeO, Fe 2 + which can undergo oxidation to Fe 3+ during the reaction to form the catalyst. An exemplary reaction is FeO + 3LiOH to H 2 O + LiFeO 2 + H(1/p) + Li 2 O (86)

在一實施例中,至少一種反應物(諸如金屬氧化物、氫氧化物或氧(氫氧)化物)充當氧化劑,其中諸如Fe、Ni、Mo或Mn之金屬原子可呈高於另一可能氧化態之氧化態。形成催化劑及低能量氫之反應可使原子經歷還原為至少一種較低氧化態。形成H2 O催化劑之金屬氧化物、氫氧化物及氧(氫氧)化物之例示性反應為 2KOH + NiO至K2 NiO2 + H2 O                                                                          (87) 3KOH + NiO至KNiO2 + H2 O + K2 O + 1/2H2 (88) 2KOH + Ni2 O3 至2KNiO2 + H2 O                                                                      (89) 4KOH + Ni2 O3 至2K2 NiO2 + 2H2 O + 1/2O2 (90) 2KOH + Ni(OH)2 至K2 NiO2 + 2H2 O                                                                 (91) 2LiOH + MoO3 至Li2 MoO4 + H2 O                                                                    (92) 3KOH + Ni(OH)2 至KNiO2 + 2H2 O + K2 O + 1/2H2 (93) 2KOH + 2NiOOH至K2 NiO2 + 2H2 O + NiO + 1/2O2 (94) KOH + NiOOH至KNiO2 + H2 O                                                                       (95) 2NaOH + Fe2 O3 至2NaFeO2 + H2 O                                                                   (96)In one embodiment, at least one reactant, such as a metal oxide, hydroxide, or oxygen (hydroxide) acts as an oxidizing agent, wherein a metal atom such as Fe, Ni, Mo, or Mn may be present at a higher level than another possible oxidation The oxidation state of the state. The reaction to form the catalyst and the low energy hydrogen can cause the atoms to undergo reduction to at least one lower oxidation state. H 2 O is formed of a metal oxide catalyst, the reaction exemplary hydroxide and oxygen (hydrogen) of the compound of 2KOH + NiO to K 2 NiO 2 + H 2 O (87) 3KOH + NiO to KNiO 2 + H 2 O + K 2 O + 1/2H 2 (88) 2KOH + Ni 2 O 3 to 2KNiO 2 + H 2 O (89) 4KOH + Ni 2 O 3 to 2K 2 NiO 2 + 2H 2 O + 1/2O 2 (90 ) 2KOH + Ni(OH) 2 to K 2 NiO 2 + 2H 2 O (91) 2LiOH + MoO 3 to Li 2 MoO 4 + H 2 O (92) 3KOH + Ni(OH) 2 to KNiO 2 + 2H 2 O + K 2 O + 1/2H 2 (93) 2KOH + 2NiOOH to K 2 NiO 2 + 2H 2 O + NiO + 1/2O 2 (94) KOH + NiOOH to KNiO 2 + H 2 O (95) 2NaOH + Fe 2 O 3 to 2NaFeO 2 + H 2 O (96)

諸如Ni、Fe、Cr及Ti之其他過渡金屬、內過渡金屬及稀土金屬及其他金屬或類金屬(諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te)可取代Ni或Fe,且其他鹼金屬(諸如Li、Na、K、Rb及Cs)可取代K或Na。在一實施例中,反應混合物包含對於H2 O穩定之金屬,諸如Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、Sn、W、Al、V、Zr、Ti、Mn、Zn、Cr及In之氧化物及氫氧化物中之至少一者。另外,反應混合物包含氫來源(諸如H2 氣體)及視情況包含解離劑(諸如載體上之貴金屬)。在一實施例中,固體燃料或高能材料包含金屬鹵化物中之至少一者之混合物,該金屬鹵化物諸如過渡金屬鹵化物(諸如溴化物,諸如FeBr2 )及形成氧(氫氧)化物、氫氧化物或氧化物及H2 O之金屬中之至少一者。在一實施例中,固體燃料或高能材料包含金屬氧化物、氫氧化物及氧(氫氧)化物中之至少一者,諸如過渡金屬氧化物(諸如Ni2 O3 及H2 O)中之至少一者之混合物。Other transition metals such as Ni, Fe, Cr and Ti, inner transition metals and rare earth metals and other metals or metalloids such as Al, Ga, In, Si, Ge, Sn, Pb, As, Sb, Bi, Se and Te ) can replace Ni or Fe, and other alkali metals such as Li, Na, K, Rb, and Cs can replace K or Na. In one embodiment, the reaction mixture comprises respect to H 2 O and stability of the metal, such as Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os, Pd, Re, At least one of oxides and hydroxides of Rh, Ru, Se, Ag, Tc, Te, Tl, Sn, W, Al, V, Zr, Ti, Mn, Zn, Cr, and In. Further, the reaction mixture comprising a source of hydrogen (such as H 2 gas) and optionally comprising a dissociation agent (such as a noble metal on the support). In one embodiment, the solid fuel or energetic material comprises a mixture of a metal halide is at least one of the transition metal halide, such as a metal halide (such as a bromide, such as FeBr 2) and the formation of oxygen (hydroxyl) compound, hydroxides or oxides of H 2 O and the at least one metal. In one embodiment, the solid fuel or energetic material comprising a metal oxide, hydroxide and oxygen (hydrogen) compound in the at least one, such as a transition metal oxide (such as Ni 2 O 3 and H 2 O) in the a mixture of at least one.

鹼性酸酐NiO與酸HCl之例示性反應為 2HCl + NiO至H2 O + NiCl2 (97) 其中對應鹼之脫水反應為 Ni(OH)2 至H2 O + NiO                                                                                       (98)An exemplary reaction of basic acid anhydride NiO with acid HCl is 2HCl + NiO to H 2 O + NiCl 2 (97) wherein the dehydration reaction of the corresponding base is Ni(OH) 2 to H 2 O + NiO (98)

反應物可包含路易斯酸或鹼及勃郎斯德勞爾酸或鹼中之至少一者。反應混合物及反應可進一步包含且涉及包含氧之化合物,其中酸與包含氧之化合物反應以形成水,如例示性反應中所給出: 2HX + POX3 至H2 O + PX5 (99)The reactants may comprise at least one of a Lewis acid or base and a Brons-delauer acid or base. The reaction mixture and reaction may further comprise and involve an oxygen-containing compound, wherein the acid reacts with the oxygen-containing compound to form water, as given in the exemplary reactions: 2HX + POX 3 to H 2 O + PX 5 (99)

(X=鹵化物)。與POX3 類似的化合物為適合的,諸如P經S替換之彼等化合物。其他適合的例示性酸酐可包含可溶於酸之元素、金屬、合金或混合物之氧化物,諸如氫氧化物、氧(氫氧)化物或包含鹼金屬、鹼土金屬、過渡金屬、內過渡金屬或稀土金屬,或Al、Ga、In、Sn或Pb之氧化物,諸如來自Mo、Ti、Zr、Si、Al、Ni、Fe、Ta、V、B、Nb、Se、Te、W、Cr、Mn、Hf、Co及Mg之群組的氧化物。對應氧化物可包含MoO2 、TiO2 、ZrO2 、SiO2 、Al2 O3 、NiO、FeO或Fe2 O3 、TaO2 、Ta2 O5 、VO、VO2 、V2 O3 、V2 O5 、B2 O3 、NbO、NbO2 、Nb2 O5 、SeO2 、SeO3 、TeO2 、TeO3 、WO2 、WO3 、Cr3 O4 、Cr2 O3 、CrO2 、CrO3 、MnO、Mn3 O4 、Mn2 O3 、MnO2 、Mn2 O7 、HfO2 、Co2 O3 、CoO、Co3 O4 、Co2 O3 及MgO。其他適合的例示性氧化物為Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、Sn、W、Al、V、Zr、Ti、Mn、Zn、Cr及In之群組的氧化物。在例示性實施例中,酸包含氫鹵酸且產物為H2 O及氧化物之金屬鹵化物。反應混合物進一步包含氫來源(諸如H2 氣體)及解離劑(諸如Pt/C),其中H及H2 O催化劑反應以形成低能量氫。(X=halide). Compounds analogous to POX 3 are suitable, such as those in which P is replaced by S. Other suitable exemplary acid anhydrides may comprise oxides of acid-soluble elements, metals, alloys or mixtures, such as hydroxides, oxygen (hydroxides) or comprising alkali metals, alkaline earth metals, transition metals, inner transition metals or Rare earth metals, or oxides of Al, Ga, In, Sn or Pb, such as from Mo, Ti, Zr, Si, Al, Ni, Fe, Ta, V, B, Nb, Se, Te, W, Cr, Mn , oxides of the group of Hf, Co and Mg. Corresponding oxides may include MoO 2 , TiO 2 , ZrO 2 , SiO 2 , Al 2 O 3 , NiO, FeO or Fe 2 O 3 , TaO 2 , Ta 2 O 5 , VO, VO 2 , V 2 O 3 , V 2 O 5 , B 2 O 3 , NbO, NbO 2 , Nb 2 O 5 , SeO 2 , SeO 3 , TeO 2 , TeO 3 , WO 2 , WO 3 , Cr 3 O 4 , Cr 2 O 3 , CrO 2 , CrO 3 , MnO, Mn 3 O 4 , Mn 2 O 3 , MnO 2 , Mn 2 O 7 , HfO 2 , Co 2 O 3 , CoO, Co 3 O 4 , Co 2 O 3 and MgO. Other suitable exemplary oxides are Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os, Pd, Re, Rh, Ru, Se, Ag, Tc, Oxides of the group of Te, Tl, Sn, W, Al, V, Zr, Ti, Mn, Zn, Cr, and In. In exemplary embodiments, the acid comprises a hydrohalogenic acid is a metal halide and the product H 2 O and oxides. The reaction mixture further comprises a source of hydrogen (such as H 2 gas) and a dissociation agent (such as Pt / C), where H and H 2 O catalyst to form a low energy hydrogen.

在一實施例中,固體燃料包含H2 來源,諸如滲透隔膜或H2 氣體;及解離劑,諸如Pt/C;及H2 O催化劑來源,其包含還原成H2 O之氧化物或氫氧化物。氧化物或氫氧化物之金屬可形成充當H來源之金屬氫化物。鹼金屬氫氧化物與氧化物(諸如LiOH及Li2 O)之例示性反應為 LiOH + H2 至H2 O + LiH                                                                                  (100) Li2 O + H2 至LiOH + LiH                                                                                 (101)In one embodiment, the solid fuel comprising H 2 source, such as a permeable membrane or H 2 gas; and a dissociating agent, such as Pt / C; and H 2 O catalyst source, comprising reduced to H 2 O of the oxide or hydroxide thing. Metals of oxides or hydroxides can form metal hydrides that serve as sources of H. Alkali metal hydroxides and oxides (such as LiOH and Li 2 O) Exemplary reaction of LiOH + H 2 to H 2 O + LiH (100) Li 2 O + H 2 to LiOH + LiH (101)

反應混合物可包含金屬之氧化物或氫氧化物,其經歷氫還原成H2 O,諸如Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、Sn、W、Al、V、Zr、Ti、Mn、Zn、Cr及In之氧化物或氫氧化物;及氫來源,諸如H2 氣體;及解離劑,諸如Pt/C。The reaction mixture may contain the metal oxide or hydroxide, which was subjected to hydrogen reduction to H 2 O, such as Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os , oxides or hydroxides of Pd, Re, Rh, Ru, Se, Ag, Tc, Te, Tl, Sn, W, Al, V, Zr, Ti, Mn, Zn, Cr and In; and sources of hydrogen, such as H 2 gas; and a dissociating agent, such as Pt / C.

在另一實施例中,反應混合物包含H2 來源(諸如H2 氣體)及解離劑(諸如Pt/C)及過氧化物化合物(諸如H2 O2 ),其分解為H2 O催化劑及包含氧(諸如O2 )之其他產物。H2 及諸如O2 之分解產物中的一些亦可反應形成H2 O催化劑。In another embodiment, the reaction mixture containing H 2 source (such as H 2 gas) and a dissociation agent (such as Pt / C) and peroxide compounds (such as H 2 O 2), which is decomposed into H 2 O and a catalyst comprising other product oxygen (such as O 2) of the. Such as H 2 and O 2 decomposition product of some of the H 2 O may react to form the catalyst.

在一實施例中,形成H2 O作為催化劑之反應包含有機脫水反應,諸如醇之有機脫水反應,諸如多元醇,諸如糖至醛及H2 O。在一實施例中,脫水反應涉及自末端醇釋放H2 O以形成醛。末端醇可包含釋放H2 O之糖或其衍生物,該H2 O可充當催化劑。適合之例示性醇為赤蘚糖醇、半乳糖醇或衛矛醇及聚乙烯醇(PVA)。例示性反應混合物包含糖+氫解離劑,諸如Pd/Al2 O3 +H2 。替代地,反應包含使金屬鹽脫水,該金屬鹽諸如具有至少一種水合水之金屬鹽。在一實施例中,脫水包含損失H2 O以充當來自水合物(諸如水離子)及鹽水合物(諸如BaI2 2H2 O及EuBr2 nH2O)之催化劑。In one embodiment, H 2 O is formed as a reaction catalyst comprising the organic dehydration reaction, such as alcohol dehydration reaction of an organic, such as polyols, such as sugars to aldehydes and H 2 O. In one embodiment, the dehydration reaction involves release of the alcohol from the terminal H 2 O to form an aldehyde. Terminal alcohol may comprise the release of H 2 O or a sugar derivative, the H 2 O may act as a catalyst. Suitable exemplary alcohols are erythritol, galactitol or dulcitol and polyvinyl alcohol (PVA). Exemplary reaction mixtures include sugar + hydrogen dissociation agent, such as Pd/Al 2 O 3 + H 2 . Alternatively, the reaction comprises dehydrating a metal salt, such as a metal salt having at least one water of hydration. In one embodiment, the loss of H 2 O containing dehydrated to serve as a catalyst from the hydrate (such as water ions) and salt hydrate thereof (such as BaI 2 2H 2 O and EuBr 2 nH2O) of.

在一實施例中,形成H2 O催化劑之反應包含以下各者之氫還原:化合物,包含氧(諸如CO)、氧陰離子(諸如MNO3 (M=鹼金屬))、金屬氧化物(諸如NiO、Ni2 O3 、Fe2 O3 或SnO)、氫氧化物(諸如Co(OH)2 )、氧(氫氧)化物(諸如FeOOH、CoOOH及NiOOH);及氫氣可還原至H2 O之化合物、氧陰離子、氧化物、氫氧化物、氧(氫氧)化物、過氧化物、超氧化物及包含氧之物質之其他組合物,諸如本發明之彼等者。包含氧或氧陰離子之例示性化合物為SOCl2 、Na2 S2 O3 、NaMnO4 、POBr3 、K2 S2 O8 、CO、CO2 、NO、NO2 、P2 O5 、N2 O5 、N2 O、SO2 、I2 O5 、NaClO2 、NaClO、K2 SO4 及KHSO4 。用於氫還原之氫來源可為H2 氣體及氫化物(諸如金屬氫化物,諸如本發明之氫化物)中之至少一者。反應混合物可進一步包含還原劑,其可形成包含氧之化合物或離子。氧陰離子之陽離子可形成包含另一陰離子之產物化合物,該陰離子諸如鹵化物、其他硫族化物、磷化物、其他氧陰離子、氮化物、矽化物、砷化物或本發明之其他陰離子。例示性反應為 4NaNO3 (c) + 5MgH2 (c)至5MgO(c) + 4NaOH(c) + 3H2 O(l) + 2N2 (g)          (102) P2 O5 (c) + 6NaH(c)至2Na3 PO4 (c) + 3H2 O(g)                                                  (103) NaClO4 (c) + 2MgH2 (c)至2MgO(c) + NaCl(c) + 2H2 O(l)                               (104) KHSO4 + 4H2 至KHS + 4H2 O                                                                         (105) K2 SO4 + 4H2 至2KOH + 2H2 O + H2 S                                                              (106) LiNO3 + 4H2 至LiNH2 + 3H2 O                                                                        (107) GeO2 + 2H2 至Ge + 2H2 O                                                                                (108) CO2 + H2 至C + 2H2 O                                                                                      (109) PbO2 + 2H2 至2H2 O + Pb                                                                                 (110) V2 O5 + 5H2 至2V + 5H2 O                                                                                 (111) Co(OH)2 + H2 至Co + 2H2 O                                                                             (112) Fe2 O3 + 3H2 至2Fe + 3H2 O                                                                              (113) 3Fe2 O3 + H2 至2Fe3 O4 + H2 O                                                                           (114) Fe2 O3 + H2 至2FeO + H2 O                                                                               (115) Ni2 O3 + 3H2 至2Ni + 3H2 O                                                                              (116) 3Ni2 O3 + H2 至2Ni3 O4 + H2 O                                                                           (117) Ni2 O3 + H2 至2NiO + H2 O                                                                               (118) 3FeOOH + 1/2H2 至Fe3 O4 + 2H2 O                                                                  (119) 3NiOOH + 1/2H2 至Ni3 O4 + 2H2 O                                                                  (120) 3CoOOH + 1/2H2 至Co3 O4 + 2H2 O                                                                 (121) FeOOH + 1/2H2 至FeO + H2 O                                                                         (122) NiOOH + 1/2H2 至NiO + H2 O                                                                         (123) CoOOH + 1/2H2 至CoO + H2 O                                                                        (124) SnO + H2 至Sn + H2 O                                                                                      (125)In one embodiment, the catalyst formed in the reaction of H 2 O containing hydrogen by the reduction of the following: compounds containing oxygen (such as CO), oxygen anion (such as an MNO 3 (M = alkali metal)), metal oxides (such as NiO , Ni 2 O 3 , Fe 2 O 3 , or SnO), hydroxides (such as Co(OH) 2 ), oxygen (hydroxides) (such as FeOOH, CoOOH, and NiOOH); and hydrogen can be reduced to H 2 O Compounds, oxyanions, oxides, hydroxides, oxygen (hydroxides), peroxides, superoxides, and other compositions of oxygen-containing species, such as those of the present invention. Exemplary compounds containing oxygen or oxygen anions are SOCl 2 , Na 2 S 2 O 3 , NaMnO 4 , POBr 3 , K 2 S 2 O 8 , CO, CO 2 , NO, NO 2 , P 2 O 5 , N 2 O 5 , N 2 O, SO 2 , I 2 O 5 , NaClO 2 , NaClO, K 2 SO 4 and KHSO 4 . The source of hydrogen for the reduction of the hydrogen gas may be H 2 and hydrides (such as metal hydrides, hydrides of the present invention, such as a) in at least one of. The reaction mixture can further comprise a reducing agent, which can form oxygen-containing compounds or ions. The cation of the oxyanion can form a product compound comprising another anion, such as a halide, other chalcogenide, phosphide, other oxyanion, nitride, silicide, arsenide, or other anions of the invention. Exemplary reaction 4NaNO 3 (c) + 5MgH 2 (c) to 5MgO (c) + 4NaOH (c ) + 3H 2 O (l) + 2N 2 (g) (102) P 2 O 5 (c) + 6NaH (c) to 2Na 3 PO 4 (c) + 3H 2 O(g) (103) NaClO 4 (c) + 2MgH 2 (c) to 2MgO(c) + NaCl(c) + 2H 2 O(l) ( 104) KHSO 4 + 4H 2 to KHS + 4H 2 O (105) K 2 SO 4 + 4H 2 to 2KOH + 2H 2 O + H 2 S (106) LiNO 3 + 4H 2 to LiNH 2 + 3H 2 O (107 ) GeO 2 + 2H 2 to Ge + 2H 2 O (108) CO 2 + H 2 to C + 2H 2 O (109) PbO 2 + 2H 2 to 2H 2 O + Pb (110) V 2 O 5 + 5H 2 to 2V + 5H 2 O (111) Co(OH) 2 + H 2 to Co + 2H 2 O (112) Fe 2 O 3 + 3H 2 to 2Fe + 3H 2 O (113) 3Fe 2 O 3 + H 2 to 2Fe 3 O 4 + H 2 O (114) Fe 2 O 3 + H 2 to 2FeO + H 2 O (115) Ni 2 O 3 + 3H 2 to 2Ni + 3H 2 O (116) 3Ni 2 O 3 + H 2 to 2Ni 3 O 4 + H 2 O (117) Ni 2 O 3 + H 2 to 2NiO + H 2 O (118) 3FeOOH + 1/2H 2 to Fe 3 O 4 + 2H 2 O (119) 3NiOOH + 1/2H 2 to Ni 3 O 4 + 2H 2 O (120) 3CoOOH + 1/2H 2 to Co 3 O 4 + 2H 2 O (121) FeOOH + 1/2H 2 to FeO + H 2 O (122) NiOOH + 1/2H 2 to NiO + H 2 O (123 ) CoOOH + 1/2H 2 to CoO + H 2 O (124) SnO + H 2 to Sn + H 2 O (125)

反應混合物可包含陰離子或陰離子來源及氧來源或氧,諸如包含氧之化合物,其中形成H2 O催化劑之反應包含視情況與來自與氧反應以形成H2 O之來源之H2 的陰離子-氧互換反應。例示性反應為 2NaOH + H2 + S至Na2 S + 2H2 O                                                                    (126) 2NaOH + H2 + Te至Na2 Te + 2H2 O                                                                 (127) 2NaOH + H2 + Se至Na2 Se + 2H2 O                                                                 (128) LiOH + NH3 至LiNH2 + H2 O                                                                           (129)The reaction mixture may contain an anion or anion source and source of oxygen or oxygen, oxygen compounds of such comprising, wherein the anion of H 2 O catalyst to include optionally reacts with oxygen from the AND to form H H 2 O of the sources of the two forms - Oxygen Swap reactions. Exemplary reaction 2NaOH + H 2 + S to Na 2 S + 2H 2 O ( 126) 2NaOH + H 2 + Te to Na 2 Te + 2H 2 O ( 127) 2NaOH + H 2 + Se to Na 2 Se + 2H 2 O (128) LiOH + NH 3 to LiNH 2 + H 2 O (129)

在另一實施例中,反應混合物包含硫屬化物之間的互換反應,諸如包含O及S之反應物之間的互換反應。例示性硫屬化物反應物,諸如四面體四硫代鉬酸銨含有([MoS4 ]2 - )陰離子。形成初生H2 O催化劑及視情況初生H之例示性反應包含鉬酸鹽[MoO4 ]2 - 與硫化氫在氨存在下之反應: [NH4 ]2 [MoO4 ] + 4H2 S至[NH4 ]2 [MoS4 ] + 4H2 O                                             (130)In another embodiment, the reaction mixture comprises an interchange reaction between chalcogenides, such as an interchange reaction between reactants comprising O and S. Exemplary chalcogenide reactants, such as tetrahedral ammonium tetrathiomolybdate contain ([MoS 4 ] 2 ) anions. An exemplary reaction to form a nascent H 2 O catalyst and optionally nascent H includes the reaction of molybdate [MoO 4 ] 2 - with hydrogen sulfide in the presence of ammonia: [NH 4 ] 2 [MoO 4 ] + 4H 2 S to [ NH 4 ] 2 [MoS 4 ] + 4H 2 O (130)

在一實施例中,反應混合物包含氫來源、包含氧之化合物及至少一種能夠與反應混合物之至少一種其他元素形成合金之元素。形成H2 O催化劑之反應可包含含氧化合物之氧與能夠與氧化合物之陽離子形成合金之元素的互換反應,其中氧與來自源之氫反應形成H2 O。例示性反應為 NaOH + 1/2H2 + Pd至NaPb + H2 O                                                                 (131) NaOH + 1/2H2 + Bi至NaBi + H2 O                                                                  (132) NaOH + 1/2H2 + 2Cd至Cd2 Na + H2 O                                                            (133) NaOH + 1/2H2 + 4Ga至Ga4 Na + H2 O                                                            (134) NaOH + 1/2H2 + Sn至NaSn + H2 O                                                                 (135) NaAlH4 + Al(OH)3 + 5Ni至NaAlO2 + Ni5 Al + H2 O + 5/2H2 (136)In one embodiment, the reaction mixture includes a source of hydrogen, an oxygen-containing compound, and at least one element capable of forming an alloy with at least one other element of the reaction mixture. H 2 O forming reaction catalyst may comprise an oxygen of the oxygen-containing compound capable of forming alloy elements interchange reactions with the cationic compound of oxygen, wherein the oxygen to react with the hydrogen formed from the source of H 2 O. Exemplary reaction NaOH + 1 / 2H 2 + Pd to NaPb + H 2 O (131) NaOH + 1 / 2H 2 + Bi to NaBi + H 2 O (132) NaOH + 1 / 2H 2 + 2Cd to Cd 2 Na + H 2 O (133) NaOH + 1/2H 2 + 4Ga to Ga 4 Na + H 2 O (134) NaOH + 1/2H 2 + Sn to NaSn + H 2 O (135) NaAlH 4 + Al(OH) 3 + 5Ni to NaAlO 2 + Ni 5 Al + H 2 O + 5/2H 2 (136)

在一實施例中,反應混合物包含包含氧之化合物,諸如氧(氫氧)化物;及還原劑,諸如形成氧化物之金屬。形成H2 O催化劑之反應可包含使氧(氫氧)化物與金屬反應以形成金屬氧化物及H2 O。例示性反應為 2MnOOH + Sn至2MnO + SnO + H2 O                                                            (137) 4MnOOH + Sn至4MnO + SnO2 + 2H2 O                                                        (138) 2MnOOH + Zn至2MnO + ZnO + H2 O                                                           (139)In one embodiment, the reaction mixture includes an oxygen-containing compound, such as oxygen (hydroxide); and a reducing agent, such as an oxide-forming metal. H 2 O forming reaction catalyst may comprise of oxygen (hydrogen) is reacted with a metal compound to form metal oxides and H 2 O. Exemplary reactions are 2MnOOH + Sn to 2MnO + SnO + H 2 O (137) 4MnOOH + Sn to 4MnO + SnO 2 + 2H 2 O (138) 2MnOOH + Zn to 2MnO + ZnO + H 2 O (139)

在一實施例中,反應混合物包含含氧化合物,諸如氫氧化物、氫來源及至少一種包含不同陰離子,諸如鹵化物或另一元素之其他化合物。形成H2 O催化劑之反應可包含氫氧化物與另一化合物或元素之反應,其中陰離子或元素與氫氧化物互換以形成另一陰離子或元素之化合物,且H2 O由氫氧化物與H2 之反應形成。陰離子可包含鹵化物。例示性反應為 2NaOH + NiCl2 + H2 至2NaCl + 2H2 O + Ni                                                   (140) 2NaOH + I2 + H2 至2NaI+ 2H2 O                                                                     (141) 2NaOH + XeF2 + H2 至2NaF+ 2H2 O + Xe                                                      (142) BiX3 (X=鹵化物) + 4Bi(OH)3 至3BiOX + Bi2 O3 + 6H2 O                              (143)In one embodiment, the reaction mixture includes an oxygen-containing compound, such as a hydroxide, a source of hydrogen, and at least one other compound that includes a different anion, such as a halide or another element. H 2 O forming reaction catalyst may comprise a reaction of hydroxide and another compound or element, the element and wherein the anionic or hydroxide anion exchange or another compound to form the element, a hydroxide and H 2 O and H The reaction of 2 is formed. The anion may contain a halide. Exemplary reactions are 2NaOH + NiCl 2 + H 2 to 2NaCl + 2H 2 O + Ni (140) 2NaOH + I 2 + H 2 to 2NaI + 2H 2 O (141) 2NaOH + XeF 2 + H 2 to 2NaF + 2H 2 O + Xe (142) BiX 3 (X=halide) + 4Bi(OH) 3 to 3BiOX + Bi 2 O 3 + 6H 2 O (143)

可選擇氫氧化物及鹵化物化合物以使得形成H2 O及另一鹵化物之反應為熱可逆的。在一實施例中,一般互換反應為 NaOH + 1/2H2 + 1/yMx Cly = NaCl + 6H2 O + x/yM                                       (171)Alternatively hydroxide and a halide compound such that a H 2 O The reaction of the halide and the other is thermally reversible. In one example, the general interchange reaction is NaOH + 1/2H 2 + 1/yM x C y = NaCl + 6H 2 O + x/yM (171)

其中例示性化合物Mx Cly 為AlCl3 、BeCl2 、HfCl4 、KAgCl2 、MnCl2 、NaAlCl4 、ScCl3 、TiCl2 、TiCl3 、UCl3 、UCl4 、ZrCl4 、EuCl3 、GdCl3 、MgCl2 、NdCl3 及YCl3 。在高溫下,諸如在約100℃至2000℃範圍內之等式(171)之反應具有約0 kJ之焓及自由能中之至少一者,且為可逆的。可逆溫度係由各反應之對應的熱力學參數計算。代表性溫度範圍為約800 K-900 K之NaCl-ScCl3 、約300 K-400 K之NaCl-TiCl2 、約600 K-800 K之NaCl-UCl3 、約250 K-300 K之NaCl-UCl4 、約250 K-300 K之NaCl-ZrCl4 、約900 K-1300 K之NaCl-MgCl2 、約900 K-1000 K之NaCl-EuCl3 、約>1000 K之NaCl-NdCl3 及約>1000 K之NaCl-YCl3Wherein exemplified compound M x Cl y as AlCl 3, BeCl 2, HfCl 4 , KAgCl 2, MnCl 2, NaAlCl 4, ScCl 3, TiCl 2, TiCl 3, UCl 3, UCl 4, ZrCl 4, EuCl 3, GdCl 3 , MgCl 2 , NdCl 3 and YCl 3 . At high temperatures, reactions such as equation (171) in the range of about 100°C to 2000°C have at least one of an enthalpy and a free energy of about 0 kJ, and are reversible. The reversible temperature is calculated from the corresponding thermodynamic parameters of each reaction. Representative temperature ranges are NaCl-ScCl 3 at about 800 K-900 K, NaCl-TiCl 2 at about 300 K-400 K , NaCl-UCl 3 at about 600 K-800 K, NaCl- UCl 4 , about 250 K-300 K NaCl-ZrCl 4 , about 900 K-1300 K NaCl-MgCl 2 , about 900 K-1000 K NaCl-EuCl 3 , about >1000 K NaCl-NdCl 3 and about NaCl-YCl 3 at >1000 K.

在一實施例中,反應混合物包含氧化物,諸如金屬氧化物,諸如鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬氧化物,及其他金屬及類金屬之氧化物(諸如Al、Ga、In、Si、Ge、Sn、Pb、As、Sb、Bi、Se及Te之氧化物)、過氧化物(諸如M2 O2 ,其中M為鹼金屬,諸如Li2 O2 、Na2 O2 及K2 O2 )及超氧化物(諸如MO2 ,其中M為鹼金屬,諸如NaO2 、KO2 、RbO2 及CsO2 及鹼土金屬超氧化物),及氫來源。離子過氧化物可進一步包含Ca、Sr或Ba之過氧化物。形成H2 O催化劑之反應可包含氧化物、過氧化物或超氧化物之氫還原以形成H2 O。例示性反應為 Na2 O + 2H2 至2NaH + H2 O                                                                             (144) Li2 O2 + H2 至Li2 O + H2 O                                                                                 (145) KO2 + 3/2H2 至KOH + H2 O                                                                             (146)In one embodiment, the reaction mixture comprises oxides, such as metal oxides, such as alkali metal, alkaline earth metal, transition metal, inner transition metal and rare earth metal oxides, and oxides of other metals and metalloids such as Al, Ga , oxides of In, Si, Ge, Sn, Pb, As, Sb, Bi, Se and Te), peroxides (such as M 2 O 2 where M is an alkali metal such as Li 2 O 2 , Na 2 O 2 and K 2 O 2 ) and superoxides such as MO 2 where M is an alkali metal such as NaO 2 , KO 2 , RbO 2 and CsO 2 and alkaline earth metal superoxides, and sources of hydrogen. The ionic peroxide may further comprise peroxides of Ca, Sr or Ba. H 2 O forming reaction catalyst may include hydrogen reduction of oxides, super-oxides or peroxides to form H 2 O. Exemplary reactions are Na 2 O + 2H 2 to 2NaH + H 2 O (144) Li 2 O 2 + H 2 to Li 2 O + H 2 O (145) KO 2 + 3/2H 2 to KOH + H 2 O (146)

在一實施例中,反應混合物包含氫來源,諸如以下中之至少一者:H2 ;氫化物,諸如鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬氫化物及本發明之氫化物中之至少一者;及氫來源或包含可燃氫之其他化合物,諸如金屬醯胺;及氧來源,諸如O2 。形成H2 O催化劑之反應可包含氧化H2 、氫化物或氫化合物(諸如金屬醯胺)以形成H2 O。例示性反應為 2NaH + O2 至Na2 O + H2 O                                                                               (147) H2 + 1/2O2 至H2 O                                                                                            (148) LiNH2 + 2O2 至LiNO3 + H2 O                                                                          (149) 2LiNH2 + 3/2O2 至2LiOH + H2 O + N2 (150)In one embodiment, the reaction mixture comprises a hydrogen source, such as of at least one of the following: H 2; hydride hydrides, such as alkali metals, alkaline earth metals, transition metals, rare earth metals and the transition metal hydride according to the present invention, and in the at least one; and flammable hydrogen or a hydrogen source such other compounds, such as metal Amides; and a source of oxygen, such as O 2. H 2 O forming reaction catalyst may comprise an oxidation of H 2, hydrides or hydrogen compounds (such as metal Amides) to form H 2 O. Exemplary reactions are 2NaH + O 2 to Na 2 O + H 2 O (147) H 2 + 1/2O 2 to H 2 O (148) LiNH 2 + 2O 2 to LiNO 3 + H 2 O (149) 2LiNH 2 + 3/2O 2 to 2LiOH + H 2 O + N 2 (150)

在一實施例中,反應混合物包含氫來源及氧來源。形成H2 O催化劑之反應可包含分解氫來源及氧來源中之至少一者以形成H2 O。例示性反應為 NH4 NO3 至N2 O + 2H2 O                                                                                   (151) NH4 NO3 至N2 + 1/2O2 + 2H2 O                                                                        (152) H2 O2 至1/2O2 + H2 O                                                                                        (153) H2 O2 + H2 至2H2 O                                                                                           (154)In one embodiment, the reaction mixture includes a source of hydrogen and a source of oxygen. Forming at least one of H 2 O decomposition catalyst may comprise the source of hydrogen and oxygen to form a source H 2 O. Exemplary reactions are NH 4 NO 3 to N 2 O + 2H 2 O (151) NH 4 NO 3 to N 2 + 1/2O 2 + 2H 2 O (152) H 2 O 2 to 1/2O 2 + H 2 O (153) H 2 O 2 + H 2 to 2H 2 O (154)

本文中所揭示之反應混合物進一步包含用以形成低能量氫之氫來源。來源可為原子氫來源,諸如氫解離劑及H2 氣體或金屬氫化物,諸如本發明之解離劑及金屬氫化物。提供原子氫之氫來源可為包含氫之化合物,諸如氫氧化物或氧(氫氧)化物。反應形成低能量氫之H可為由一或多種反應物之反應形成之初生H,其中至少一種反應物包含氫來源,諸如氫氧化物與氧化物之反應。反應亦可形成H2 O催化劑。氧化物及氫氧化物可包含相同化合物。舉例而言,諸如FeOOH之氧(氫氧)化物可進行脫水以在脫水期間為低能量氫反應提供H2 O催化劑且亦提供初生H: 4FeOOH至H2 O + Fe2 O3 + 2FeO + O2 + 2H(1/4)                                           (155) 其中在反應期間形成之初生H與低能量氫反應。其他例示性反應為氫氧化物與氧(氫氧)化物或氧化物(諸如NaOH+FeOOH或Fe2 O3 )反應形成鹼金屬氧化物(諸如NaFeO2 +H2 O),其中在反應期間形成之初生H可形成低能量氫,其中H2 O充當催化劑。氧化物及氫氧化物可包含相同化合物。舉例而言,諸如FeOOH之氧(氫氧)化物可進行脫水以在脫水期間為低能量氫反應提供H2 O催化劑且亦提供初生H: 4FeOOH至H2 O + Fe2 O3 + 2FeO + O2 + 2H(1/4)                                           (156) 其中在反應期間形成之初生H與低能量氫反應。其他例示性反應為氫氧化物與氧(氫氧)化物或氧化物(諸如NaOH+FeOOH或Fe2 O3 )反應形成鹼金屬氧化物(諸如NaFeO2 +H2 O),其中在反應期間形成之初生H可形成低能量氫,其中H2 O充當催化劑。在形成H2 O及氧化物離子時,氫氧化物離子經還原且氧化。氧化物離子可與H2 O反應形成OH- 。相同路徑可藉由諸如以下之氫氧化物-鹵化物互換反應獲得

Figure 02_image639
(157) 其中例示性M及M'金屬分別為鹼土金屬及過渡金屬,諸如Cu(OH)2 +FeBr2 、Cu(OH)2 +CuBr2 或Co(OH)2 +CuBr2 。在一實施例中,固體燃料可包含金屬氫氧化物及金屬鹵化物,其中至少一種金屬為Fe。H2 O及H2 中之至少一者可經添加以再生反應物。在一實施例中,M及M'可選自以下之群組:鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬,Al、Ga、In、Si、Ge、Sn、Pb,第13、14、15及16族元素,及氫氧化物或鹵化物之其他陽離子,諸如本發明之彼等者。形成HOH催化劑、初生H及低能量氫中之至少一者的例示性反應為
Figure 02_image641
(158)The reaction mixtures disclosed herein further comprise a source of hydrogen to form low energy hydrogen. A hydrogen atom may be the source of origin of the hydrogen dissociation agent such as H 2 gas or a metal hydride, such as a solution of the present invention from a metal hydride agent. The source of hydrogen that provides atomic hydrogen may be a compound containing hydrogen, such as hydroxide or oxygen (hydroxide). The H that reacts to form low energy hydrogen may be nascent H formed from the reaction of one or more reactants, at least one of which comprises a source of hydrogen, such as the reaction of a hydroxide and an oxide. The reaction may also form H 2 O catalyst. The oxides and hydroxides may comprise the same compound. For example, the FeOOH such as oxygen (hydroxyl) compound may be dehydrated to provide the H 2 O is also within the catalyst during the dehydration reaction provides a low energy hydrogen Primary H: 4FeOOH to H 2 O + Fe 2 O 3 + 2FeO + O 2 + 2H(1/4) (155) where nascent H formed during the reaction reacts with low energy hydrogen. Other exemplary reaction with oxygen hydroxide (hydroxide) or an oxide (such as NaOH + FeOOH or Fe 2 O 3) to form alkali metal oxides (such as NaFeO 2 + H 2 O), which is formed during the reaction The nascent H can form low-energy hydrogen with H 2 O acting as a catalyst. The oxides and hydroxides may comprise the same compound. For example, the FeOOH such as oxygen (hydroxyl) compound may be dehydrated to provide the H 2 O is also within the catalyst during the dehydration reaction provides a low energy hydrogen Primary H: 4FeOOH to H 2 O + Fe 2 O 3 + 2FeO + O 2 + 2H(1/4) (156) where nascent H formed during the reaction reacts with low energy hydrogen. Other exemplary reaction with oxygen hydroxide (hydroxide) or an oxide (such as NaOH + FeOOH or Fe 2 O 3) to form alkali metal oxides (such as NaFeO 2 + H 2 O), which is formed during the reaction The nascent H can form low-energy hydrogen with H 2 O acting as a catalyst. In forming H 2 O and oxide ions, hydroxide ions of reduced and oxidized. Oxide ions can react with H 2 O to form OH . The same route can be obtained by a hydroxide-halide exchange reaction such as
Figure 02_image639
(157) wherein M exemplary and M 'are metals and alkaline earth transition metals, such as Cu (OH) 2 + FeBr 2 , Cu (OH) 2 + CuBr 2 or Co (OH) 2 + CuBr 2 . In one embodiment, the solid fuel may include metal hydroxides and metal halides, wherein at least one of the metals is Fe. H 2 O in the H 2 and at least one may be added to regenerate the reactants. In one embodiment, M and M' may be selected from the group of alkali metals, alkaline earth metals, transition metals, inner transition metals and rare earth metals, Al, Ga, In, Si, Ge, Sn, Pb, thirteenth , Group 14, 15 and 16 elements, and other cations of hydroxides or halides, such as those of the present invention. Exemplary reactions to form at least one of HOH catalyst, nascent H, and low energy hydrogen are
Figure 02_image641
(158)

在一實施例中,反應混合物包含氫氧化物及鹵化物化合物中之至少一者,諸如本發明之彼等化合物。在一實施例中,鹵化物可用以促進初生HOH催化劑及H中之至少一者之形成及保持中之至少一者。在一實施例中,混合物可用以降低反應混合物之熔點。In one embodiment, the reaction mixture includes at least one of hydroxide and halide compounds, such as those of the present invention. In one embodiment, the halide can be used to promote at least one of the formation and retention of at least one of the nascent HOH catalyst and H. In one embodiment, the mixture can be used to lower the melting point of the reaction mixture.

酸-鹼反應為得到H2 O催化劑之另一方法。例示性鹵化物及氫氧化物混合物為Bi、Cd、Cu、Co、Mo及Cd之混合物及Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、Sn、W及Zn之群組的具有低水反應性之金屬之氫氧化物及鹵化物之混合物。在一實施例中,反應混合物進一步包含H2 O,其可充當H及諸如初生H2 O之催化劑中之至少一者的來源。水可呈在反應期間分解或以其他方式反應之水合物形式。Acid - base reaction is another method to obtain the H 2 O catalyst. Exemplary halide and hydroxide mixtures are mixtures of Bi, Cd, Cu, Co, Mo, and Cd and Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Mixtures of hydroxides and halides of metals with low water reactivity of the group of Os, Pd, Re, Rh, Ru, Se, Ag, Tc, Te, Tl, Sn, W and Zn. In one embodiment, the reaction mixture further comprises H 2 O, and which may serve as the primary source of H 2 O H of the catalyst of at least one of. Water may be in the form of a hydrate that decomposes or otherwise reacts during the reaction.

在一實施例中,固體燃料包含H2 O與無機化合物之反應混合物,該無機化合物形成初生H及初生H2 O。無機化合物可包含鹵化物,諸如與H2 O反應之金屬鹵化物。反應產物可為氫氧化物、氧(氫氧)化物、氧化物、鹵氧化物、羥基鹵化物及水合物中之至少一者。其他產物可包含包含氧及鹵素之陰離子,諸如

Figure 02_image643
Figure 02_image645
Figure 02_image647
Figure 02_image649
(X=鹵素)。產物亦可為還原陽離子及鹵素氣體中之至少一者。鹵化物可為金屬鹵化物,諸如鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬以及Al、Ga、In、Sn、Pb、S、Te、Se、N、P、As、Sb、Bi、C、Si、Ge及B,以及形成鹵化物之其他元素中之一者。金屬或元素可另外為形成氫氧化物、氧(氫氧)化物、氧化物、鹵氧化物、羥基鹵化物、水合物中之至少一者的金屬或元素;及形成具有包含氧及鹵素之陰離子,諸如
Figure 02_image643
Figure 02_image645
Figure 02_image647
Figure 02_image649
(X=鹵素)的化合物的金屬或元素。適合的例示性金屬及元素為鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬以及Al、Ga、In、Sn、Pb、S、Te、Se、N、P、As、Sb、Bi、C、Si、Ge及B中之至少一者。例示性反應為 5MX2 + 7H2 O至MXOH + M(OH)2 + MO + M2 O3 + 11H(1/4) + 9/2X2 (159) 其中M為金屬,諸如過渡金屬,諸如Cu,且X為鹵素,諸如Cl。In one embodiment, the solid fuel comprises a reaction mixture of H 2 O and inorganic compounds that form nascent H and nascent H 2 O. The inorganic compounds may contain a halide, such as a metal halide with the reaction of H 2 O. The reaction product can be at least one of hydroxide, oxygen (hydroxide), oxide, oxyhalide, hydroxyhalide, and hydrate. Other products may contain anions containing oxygen and halogen, such as
Figure 02_image643
,
Figure 02_image645
,
Figure 02_image647
and
Figure 02_image649
(X=halogen). The product may also be at least one of a reduced cation and a halogen gas. Halides can be metal halides such as alkali, alkaline earth, transition, inner transition, and rare earth metals and Al, Ga, In, Sn, Pb, S, Te, Se, N, P, As, Sb, Bi , C, Si, Ge, and B, and one of the other elements that form halides. The metal or element may additionally be a metal or element that forms at least one of hydroxides, oxygen (hydroxides), oxides, oxyhalides, hydroxyhalides, hydrates; and forms having anions comprising oxygen and halogen , such as
Figure 02_image643
,
Figure 02_image645
,
Figure 02_image647
and
Figure 02_image649
A metal or element of a compound of (X=halogen). Suitable exemplary metals and elements are alkali, alkaline earth, transition, inner transition and rare earth metals and Al, Ga, In, Sn, Pb, S, Te, Se, N, P, As, Sb, Bi, At least one of C, Si, Ge and B. An exemplary reaction is 5MX 2 + 7H 2 O to MXOH + M(OH) 2 + MO + M 2 O 3 + 11H(1/4) + 9/2X 2 (159) where M is a metal such as a transition metal such as Cu, and X is a halogen, such as Cl.

在一實施例中,固體燃料或高能材料包含單態氧來源。產生單態氧之例示性反應為 NaOCl + H2 O2 至O2 + NaCl + H2 O                                                                 (160)In one embodiment, the solid fuel or energetic material comprises a source of singlet oxygen. An exemplary reaction to produce singlet oxygen is NaOCl + H 2 O 2 to O 2 + NaCl + H 2 O (160)

在另一實施例中,固體燃料或高能材料包含Fenton反應之反應劑,諸如H2 O2 之來源。In another embodiment, the energetic material comprises a solid fuel, or the Fenton reaction of reactants, such as a source of H 2 O 2.

固體燃料及反應可為以下各者中之至少一者:藉由至少一種SunCell®電漿或熱功率及本文及Mills先前申請案中所揭示之方法再生及可逆,諸如氫催化劑反應器,PCT/US08/61455,申請於PCT 4/24/2008;異質氫催化劑反應器,PCT/US09/052072,申請於PCT 7/29/2009;異質氫催化劑電力系統,PCT/US10/27828,申請於PCT 3/18/2010;電化學氫催化劑電力系統,PCT/US11/28889,申請於PCT 3/17/2011;基於H2 O之電化學氫催化劑電力系統,PCT/US12/31369,申請於3/30/2012;以及CIHT電力系統,PCT/US13/041938,申請於5/21/13,其以全文引用之方式併入本文中。The solid fuel and reaction can be at least one of: regenerated and reversible by at least one SunCell® plasma or thermal power and methods disclosed herein and in Mills prior applications, such as hydrogen catalyst reactors, PCT/ US08/61455, applied in PCT 4/24/2008; Heterogeneous hydrogen catalyst reactor, PCT/US09/052072, applied in PCT 7/29/2009; Heterogeneous hydrogen catalyst power system, PCT/US10/27828, applied in PCT 3 /18/2010; Electrochemical hydrogen catalyst power system, PCT/US11/28889, filed on PCT 3/17/2011; Electrochemical hydrogen catalyst power system based on H 2 O, PCT/US12/31369, filed on 3/30 /2012; and CIHT Power Systems, PCT/US13/041938, filed 5/21/13, which is incorporated herein by reference in its entirety.

在一實施例中,氫氧化物與鹵化物化合物混合物(諸如Cu(OH)2 +CuBr2 )之再生反應可藉由添加至少一種H2 及H2 O達成。例示性熱可逆固體燃料循環為 T 100        2CuBr2 + Ca(OH)2

Figure 02_image655
2CuO + 2CaBr2 + H2 O                              (161) T 730        CaBr2 + 2H2 O
Figure 02_image655
Ca(OH)2 + 2HBr                                               (162) T 100        CuO + 2HBr
Figure 02_image655
CuBr2 + H2 O                                                       (163) T 100        2CuBr2 + Cu(OH)2
Figure 02_image655
2CuO + 2CaBr2 + H2 O                              (164) T 730        CuBr2 + 2H2 O
Figure 02_image655
Cu(OH)2 + 2HBr                                              (165) T 100        CuO + 2HBr
Figure 02_image655
CuBr2 + H2 O                                                       (166)In one embodiment, the regeneration reaction of a mixture of hydroxide and halide compounds, such as Cu(OH) 2 +CuBr 2 , can be accomplished by adding at least one of H 2 and H 2 O. An exemplary thermally reversible solid fuel cycle is T 100 2CuBr 2 + Ca(OH) 2
Figure 02_image655
2CuO + 2CaBr 2 + H 2 O (161) T 730 CaBr 2 + 2H 2 O
Figure 02_image655
Ca(OH) 2 + 2HBr (162) T 100 CuO + 2HBr
Figure 02_image655
CuBr 2 + H 2 O (163) T 100 2CuBr 2 + Cu(OH) 2
Figure 02_image655
2CuO + 2CaBr 2 + H 2 O (164) T 730 CuBr 2 + 2H 2 O
Figure 02_image655
Cu(OH) 2 + 2HBr (165) T 100 CuO + 2HBr
Figure 02_image655
CuBr 2 + H 2 O (166)

在一實施例中,其中諸如K或Li及nH(n=整數)、OH、O、2O、O2 及H2 O之鹼金屬M中之至少一者充當催化劑,H來源為諸如MH之金屬氫化物及金屬M及金屬氫化物MH中之至少一者與H來源反應形成H中之至少一者。一種產物可為經氧化M,諸如氧化物或氫氧化物。產生原子氫及催化劑中之至少一者的反應可為電子轉移反應或氧化還原反應。反應混合物可進一步包含H2 、H2 解離劑(諸如SunCell®及本發明之解離劑(諸如Ni篩網或R-Ni)中之至少一者)及導電載體(諸如此等解離劑及其他者以及本發明之載體(諸如碳及碳化物、硼化物及碳氮化物))中之至少一者。M或MH之例示性氧化反應為 4MH + Fe2 O3 至+ H2 O + H(1/p) + M2 O + MOH + 2Fe + M                          (167) 其中H2 O及M中之至少一者可充當催化劑以形成H(1/p)。In one embodiment, where such as K or Li and nH (n = integer), OH, O, 2O, O 2 and H 2 O of an alkali metal M in the at least one acts as a catalyst, H source of a metal such as MH's The hydride and at least one of metal M and metal hydride MH react with a source of H to form at least one of H. One product may be oxidized M, such as an oxide or hydroxide. The reaction that produces at least one of atomic hydrogen and the catalyst can be an electron transfer reaction or a redox reaction. The reaction mixture may further comprise H 2, H 2 dissociation agent (such as a solution of the present invention and SunCell® from the agent (such as Ni mesh or R-Ni) in the at least one) and a conductive support (such as dissociation of these agents and other persons and at least one of the supports of the present invention, such as carbon and carbides, borides and carbonitrides. An exemplary oxidation reaction of M or MH is 4MH + Fe 2 O 3 to + H 2 O + H(1/p) + M 2 O + MOH + 2Fe + M (167) wherein at least one of H 2 O and M which can act as catalysts to form H(1/p).

在一實施例中,氧來源為具有與水之形成類似之形成之熱的化合物,使得在最小能量釋放之情況下發生氧來源化合物之還原產物與氫之間的氧互換。適合的例示性氧來源化合物為CdO、CuO、ZnO、SO2 、SeO2 及TeO2 。其他物質(諸如金屬氧化物)亦可為酸或鹼之酸酐,其可經歷脫水反應,因為H2 O催化劑來源為MnOx 、AlOx 及SiOx 。在一實施例中,氧化物層氧來源可涵蓋氫,諸如金屬氫化物,諸如氫化鈀之來源。形成進一步反應以形成低能量氫之H2 O催化劑及原子H的反應可藉由加熱經氧化物塗佈之氫來源(諸如經金屬氧化物塗佈之氫化鈀)來起始。在一實施例中,形成低能量氫催化劑之反應及再生反應分別包含氧來源化合物與氫之間及水與經還原氧來源化合物之間的氧互換。適合的經還原氧來源為Cd、Cu、Zn、S、Se及Te。在一實施例中,氧互換反應可包含用於以熱方式形成氫氣之彼等互換反應。例示性熱方法為氧化鐵循環、氧化鈰(IV)-氧化鈰(III)循環、氧化鋅-氧化鋅循環、硫碘循環、銅氯循環及混合硫循環及熟習此項技術者已知之其他方法。在一實施例中,形成低能量氫催化劑之反應及諸如氧互換反應之再生反應同時發生在同一反應容器中。可控制諸如溫度及壓力之條件以達成反應之同時性。替代地,產物可在至少一個其他分離容器中移除及再生,這可在與如本發明及Mills先前申請案中給出之功率形成反應之條件不同的條件下發生。In one embodiment, the oxygen source is a compound having a heat of formation similar to that of water, such that oxygen exchange between the reduction product of the oxygen source compound and hydrogen occurs with minimal energy release. Exemplary of suitable oxygen source compound is CdO, CuO, ZnO, SO 2 , SeO 2 , and TeO 2. Other materials (such as metal oxides) may also be an acid anhydride of an acid or base, which can be subjected to a dehydration reaction, H 2 O as a catalyst source for MnO x, AlO x and SiO x. In one embodiment, the oxide layer oxygen source may encompass a source of hydrogen, such as a metal hydride, such as palladium hydride. Formed is further reacted to form a low energy hydrogen catalyst of H 2 O and H atoms may be heated by a source of hydrogen through the oxide coating (such as palladium oxide coating the metal hydride) is initiated. In one embodiment, the reaction to form the low energy hydrogen catalyst and the regeneration reaction comprise oxygen exchange between the oxygen source compound and hydrogen and between water and the reduced oxygen source compound, respectively. Suitable sources of reduced oxygen are Cd, Cu, Zn, S, Se and Te. In one embodiment, the oxygen exchange reactions may include those for thermally forming hydrogen gas. Exemplary thermal methods are iron oxide cycling, ceria(IV) oxide-ceria(III) oxide cycling, zinc oxide-zinc oxide cycling, sulfur iodine cycling, copper chloride cycling and mixed sulfur cycling and others known to those skilled in the art . In one embodiment, the reaction to form the low energy hydrogen catalyst and the regeneration reaction such as the oxygen exchange reaction occur simultaneously in the same reaction vessel. Conditions such as temperature and pressure can be controlled to achieve simultaneity of the reaction. Alternatively, the product can be removed and regenerated in at least one other separation vessel, which can occur under conditions different from those of the power-forming reaction as presented in the present invention and in the Mills previous application.

固體燃料可包含不同離子,諸如鹼金屬、鹼土金屬及其他陽離子以及陰離子,諸如鹵化物及氧陰離子。固體燃料之陽離子可包含以下中之至少一者:鹼金屬、鹼土金屬、過渡金屬、內過渡金屬、稀土金屬、Li、Na、K、Rb、Cs、Mg、Ca、Sr、Ba、Ga、Al、V、Zr、Ti、Mn、Zn、Li、Na、K、Rb、Cs、Mg、Ca、Sr、Ba、Al、V、Zr、Ti、Mn、Zn、Cr、Sn、In、Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、W及形成離子化合物之此項技術中已知之其他陽離子。陰離子可包含以下中之至少一者:氫氧化物、鹵化物、氧化物、硫屬化物、硫酸鹽、磷酸鹽、磷化物、硝酸鹽、氮化物、碳酸鹽、鉻酸鹽、矽化物、砷化物、硼化物、過氯酸鹽、過碘酸鹽、氧化鈷鎂、氧化鎳鎂、氧化銅鎂、鋁酸鹽、鎢酸鹽、鋯酸鹽、鈦酸鹽、錳酸鹽、碳化物、金屬氧化物、非金屬氧化物;鹼金屬、鹼土金屬、過渡金屬、內過渡金屬及稀土金屬,及Al、Ga、In、Sn、Pb、S、Te、Se、N、P、As、Sb、Bi、C、Si、Ge及B,以及形成氧化物或氧陰離子之其他元素的氧化物;LiAlO2 、MgO、CaO、ZnO、CeO2 、CuO、CrO4 、Li2 TiO3 或SrTiO3 ,包含元素、金屬、合金或Mo、Ti、Zr、Si、Al、Ni、Fe、Ta、V、B、Nb、Se、Te、W、Cr、Mn、Hf及Co之群組之混合物的氧化物;MoO2 、TiO2 、ZrO2 、SiO2 、Al2 O3 、NiO、FeO或Fe2 O3 、TaO2 、Ta2 O5 、VO、VO2 、V2 O3 、V2 O5 、B2 O3 、NbO、NbO2 、Nb2 O5 、SeO2 、SeO3 、TeO2 、TeO3 、WO2 、WO3 、Cr3 O4 、Cr2 O3 、CrO2 、CrO3 、MnO、Mn3 O4 、Mn2 O3 、MnO2 、Mn2 O7 、HfO2 、CoO、Co2 O3 、Co3 O4 、Li2 MoO3 或Li2 MoO4 、Li2 TiO3 、Li2 ZrO3 、Li2 SiO3 、LiAlO2 、LiNiO2 、LiFeO2 、LiTaO3 、LiVO3 、Li2 B4 O7 、Li2 NbO3 、Li2 PO4 、Li2 SeO3 、Li2 SeO4 、Li2 TeO3 、Li2 TeO4 、Li2 WO4 、Li2 CrO4 、Li2 Cr2 O7 、Li2 MnO3 、Li2 MnO4 、Li2 HfO3 、LiCoO2 、Li2 MoO4 、MoO2 、Li2 WO4 、Li2 CrO4 及Li2 Cr2 O7 、S、Li2 S、MoO2 、TiO2 、ZrO2 、SiO2 、Al2 O3 、NiO、FeO或Fe2 O3 、TaO2 、Ta2 O5 、VO、VO2 、V2 O3 、V2 O5 、P2 O3 、P2 O5 、B2 O3 ,以及形成離子化合物之此項技術中已知之其他陰離子。Solid fuels may contain various ions such as alkali metals, alkaline earth metals and other cations and anions such as halides and oxyanions. The cation of the solid fuel may comprise at least one of the following: alkali metals, alkaline earth metals, transition metals, inner transition metals, rare earth metals, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ga, Al , V, Zr, Ti, Mn, Zn, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Al, V, Zr, Ti, Mn, Zn, Cr, Sn, In, Cu, Ni , Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os, Pd, Re, Rh, Ru, Se, Ag, Tc, Te, Tl, W and those that form ionic compounds other cations known in the art. The anion may comprise at least one of the following: hydroxide, halide, oxide, chalcogenide, sulfate, phosphate, phosphide, nitrate, nitride, carbonate, chromate, silicide, arsenic compound, boride, perchlorate, periodate, cobalt magnesium oxide, nickel magnesium oxide, copper magnesium oxide, aluminate, tungstate, zirconate, titanate, manganate, carbide, Metal oxides, non-metal oxides; alkali metals, alkaline earth metals, transition metals, inner transition metals and rare earth metals, and Al, Ga, In, Sn, Pb, S, Te, Se, N, P, As, Sb, Bi, C, Si, Ge and B, and oxides of other elements forming oxides or oxyanions; LiAlO 2 , MgO, CaO, ZnO, CeO 2 , CuO, CrO 4 , Li 2 TiO 3 or SrTiO 3 , including Oxides of elements, metals, alloys or mixtures of the group Mo, Ti, Zr, Si, Al, Ni, Fe, Ta, V, B, Nb, Se, Te, W, Cr, Mn, Hf and Co; MoO 2 , TiO 2 , ZrO 2 , SiO 2 , Al 2 O 3 , NiO, FeO or Fe 2 O 3 , TaO 2 , Ta 2 O 5 , VO, VO 2 , V 2 O 3 , V 2 O 5 , B 2 O 3 , NbO, NbO 2 , Nb 2 O 5 , SeO 2 , SeO 3 , TeO 2 , TeO 3 , WO 2 , WO 3 , Cr 3 O 4 , Cr 2 O 3 , CrO 2 , CrO 3 , MnO, Mn 3 O 4 , Mn 2 O 3 , MnO 2 , Mn 2 O 7 , HfO 2 , CoO, Co 2 O 3 , Co 3 O 4 , Li 2 MoO 3 or Li 2 MoO 4 , Li 2 TiO 3 , Li 2 ZrO 3 , Li 2 SiO 3 , LiAlO 2 , LiNiO 2 , LiFeO 2 , LiTaO 3 , LiVO 3 , Li 2 B 4 O 7 , Li 2 NbO 3 , Li 2 PO 4 , Li 2 SeO 3 , Li 2 SeO 4 , Li 2 TeO 3 , Li 2 TeO 4 , Li 2 WO 4 , Li 2 CrO 4 , Li 2 Cr 2 O 7 , Li 2 MnO 3 , Li 2 MnO 4 , Li 2 HfO 3 , LiCoO 2 , Li 2 MoO 4 , MoO 2 , Li 2 WO 4 , Li 2 CrO 4 and Li 2 Cr 2 O 7 , S, Li 2 S, MoO 2 , TiO 2 , ZrO 2 , SiO 2 , Al 2 O 3 , NiO, FeO or Fe 2 O 3 , TaO 2 , Ta 2 O 5 , VO, VO 2 , V 2 O 3 , V 2 O 5 , P 2 O 3 , P 2 O 5 , B 2 O 3, and forming the other anions are known in the art ionic compounds.

在一實施例中,醯胺(諸如LiNH2 )之NH2 基團充當催化劑,其中位能為約81.6 eV或約3X27.2 eV。類似於可逆H2 O消除或酸或鹼與酸酐之間的加成反應,且反之亦然,醯胺與醯亞胺或氮化物之間的可逆反應導致形成NH2 催化劑,其進一步與原子H反應形成低能量氫。醯胺與醯亞胺及氮化物中之至少一者之間的可逆反應亦可充當氫來源,諸如原子H。In one embodiment, the NH 2 group of an amide (such as LiNH 2 ) acts as a catalyst with a potential energy of about 81.6 eV or about 3×27.2 eV. Elimination of H 2 O similar to the reversible-addition reaction between the acid or base or with an acid anhydride, and vice versa, a reversible reaction between the amine and acyl (PEI) or a nitride NH 2 results in the formation of the catalyst, which is further reacted with H atoms The reaction forms low energy hydrogen. The reversible reaction between amide and at least one of amide and nitride can also serve as a source of hydrogen, such as atomic H.

固體燃料熔融及電解池 在一實施例中,形成熱功率及較低能量氫物種(諸如H(1/p)及H2 (1/p))之反應器(其中p為整數)包含充當H及HOH催化劑中之至少一者之來源的熔融鹽。熔融鹽可包含鹽之混合物,諸如共熔混合物。混合物可包含氫氧化物及鹵化物中之至少一者,諸如鹼性及鹼土金屬氫氧化物及鹵化物中之至少一者的混合物,諸如LiOH-LiBr或KOH-KCl。反應器可進一步包含加熱器、加熱器電源供應器及溫度控制器以將鹽保持在熔融狀態。H及HOH催化劑中之至少一者之來源可包含水。水可在熔融鹽中解離。熔融鹽可進一步包含添加劑,諸如氧化物及金屬(諸如氫解離劑金屬)中之至少一者,諸如包含Ti、Ni及貴金屬(諸如Pt或Pd)之至少一者,以提供H及HOH催化劑中之至少一者。在一實施例中,H及HOH可藉由熔融鹽中所存在之氫氧化物、鹵化物及水中之至少一者的反應形成。在例示性實施例中,H及HOH中之至少一者可藉由MOH(M=鹼金屬):2MOH至M2 O+HOH;MOH+H2 O至MOOH+2H;MX+H2 O(X=鹵化物)至MOX+2H之脫水形成,其中脫水及互換反應可由MX催化。熔融鹽之反應之其他實施例在固體燃料揭示內容中給出,其中此等反應亦可包含SunCell®固態燃料反應物及反應。 And melting the solid fuel cell in one embodiment, formed in the thermal power and low energy hydrogen species (such as H (1 / p) and H 2 (1 / p)) of the reactor (wherein p is an integer) comprising act as H and a molten salt that is the source of at least one of the HOH catalysts. The molten salt may comprise a mixture of salts, such as a eutectic mixture. The mixture may comprise at least one of a hydroxide and a halide, such as a mixture of at least one of alkaline and alkaline earth metal hydroxides and halides, such as LiOH-LiBr or KOH-KCl. The reactor may further comprise a heater, a heater power supply and a temperature controller to maintain the salt in a molten state. The source of at least one of the H and HOH catalyst may comprise water. Water can dissociate in molten salts. The molten salt may further comprise additives such as at least one of oxides and metals such as hydrogen dissociator metals such as at least one of Ti, Ni and noble metals such as Pt or Pd to provide H and HOH catalysts in at least one of them. In one embodiment, H and HOH may be formed by the reaction of at least one of hydroxide, halide, and water present in the molten salt. In an exemplary embodiment, H and HOH in the at least one available by MOH (M = alkali metal): 2MOH to M 2 O + HOH; MX + H 2 O (; MOH + H 2 O to MOOH + 2H Dehydration of X=halide) to MOX+2H is formed, where the dehydration and exchange reactions can be catalyzed by MX. Other examples of molten salt reactions are given in the solid fuel disclosure, where such reactions may also include SunCell® solid fuel reactants and reactions.

在一實施例中,形成熱功率及較低能量氫物種(諸如H(1/p)及H2 (1/p))之反應器(其中p為整數)包含:電解系統,其包含至少兩個電極;及電解電源供應器;電解控制器;熔融鹽電解質;加熱器;溫度感測器;及加熱器控制器,其用以保持所要溫度;及H及HOH催化劑中之至少一者之來源。電極在電解質中可為穩定的。例示性電極為鎳及貴金屬電極。水可供應至電池且諸如DC電壓之電壓可施加至電極。氫可在陰極處形成且氧可在陽極處形成。氫可與亦形成於電池中之HOH催化劑反應以形成低能量氫。HOH催化劑可來自所添加之水。來自形成低能量氫之能量可在電池中產生熱。電池可經良好絕緣,使得來自低能量氫反應之熱可減少加熱器保持熔融鹽所需之功率的量。絕緣件可包含真空護套或此項技術中已知之其他熱絕緣件,諸如陶瓷纖維絕緣件。反應器可進一步包含熱交換器。熱交換器可移除待遞送至外部負載之餘熱。In one embodiment, forming a thermal power and low energy hydrogen species (such as H (1 / p) and H 2 (1 / p)) of the reactor (wherein p is an integer) comprising: an electrolysis system, which comprises at least two and an electrolysis power supply; an electrolysis controller; a molten salt electrolyte; a heater; a temperature sensor; and a heater controller to maintain a desired temperature; and a source of at least one of H and HOH catalysts . The electrodes may be stable in the electrolyte. Exemplary electrodes are nickel and noble metal electrodes. Water can be supplied to the battery and a voltage such as a DC voltage can be applied to the electrodes. Hydrogen can be formed at the cathode and oxygen can be formed at the anode. The hydrogen can react with the HOH catalyst also formed in the cell to form low energy hydrogen. The HOH catalyst can be derived from the added water. The energy from the formation of low-energy hydrogen can generate heat in the battery. The battery can be well insulated so that the heat from the low energy hydrogen reaction can reduce the amount of power required by the heater to maintain the molten salt. The insulation may comprise a vacuum jacket or other thermal insulation known in the art, such as ceramic fiber insulation. The reactor may further comprise a heat exchanger. A heat exchanger can remove waste heat to be delivered to an external load.

熔融鹽可包含具有至少一種其他鹽之氫氧化物,該至少一種其他鹽諸如選自一或多種其他氫氧化物、鹵化物、硝酸鹽、硫酸鹽、碳酸鹽及磷酸鹽的鹽。在一實施例中,鹽混合物可包含金屬氫氧化物及與本發明之另一陰離子(諸如鹵化物、硝酸鹽、硫酸鹽、碳酸鹽及磷酸鹽)相同之金屬。熔融鹽可包含至少一種鹽混合物,其選自CsNO3 -CsOH、CsOH-KOH、CsOH-LiOH、CsOH-NaOH、CsOH-RbOH、K2 CO3 -KOH、KBr-KOH、KCl-KOH、KF-KOH、KI-KOH、KNO3 -KOH、KOH-K2 SO4 、KOH-LiOH、KOH-NaOH、KOH-RbOH、Li2 CO3 -LiOH、LiBr-LiOH、LiCl-LiOH、LiF-LiOH、LiI-LiOH、LiNO3 -LiOH、LiOH-NaOH、LiOH-RbOH、Na2 CO3 -NaOH、NaBr-NaOH、NaCl-NaOH、NaF-NaOH、NaI-NaOH、NaNO3 -NaOH、NaOH-Na2 SO4 、NaOH-RbOH、RbCl-RbOH、RbNO3 -RbOH、LiOH-LiX、NaOH-NaX、KOH-KX、RbOH-RbX、CsOH-CsX、Mg(OH)2 -MgX2 、Ca(OH)2 -CaX2 、Sr(OH)2 -SrX2 或Ba(OH)2 -BaX2 ,其中X=F、Cl、Br或I;及LiOH、NaOH、KOH、RbOH、CsOH、Mg(OH)2 、Ca(OH)2 、Sr(OH)2 或Ba(OH)2 及AlX3 、VX2 、ZrX2 、TiX3 、MnX2 、ZnX2 、CrX2 、SnX2 、InX3 、CuX2 、NiX2 、PbX2 、SbX3 、BiX3 、CoX2 、CdX2 、GeX3 、AuX3 、IrX3 、FeX3 、HgX2 、MoX4 、OsX4 、PdX2 、ReX3 、RhX3 、RuX3 、SeX2 、AgX2 、TcX4 、TeX4 、TlX及WX4 中之一或多者,其中X=F、Cl、Br或I。熔融鹽可包含為鹽混合物電解質之陰離子所共有的陽離子;或陰離子為陽離子所共有,且氫氧化物對於混合物之其他鹽為穩定的。該混合物可為共熔混合物。電池可在約共熔混合物之熔點的溫度下操作但可在較高溫度下操作。電解電壓可為約1 V至50 V、2 V至25 V、2 V至10 V、2 V至5 V及2 V至3.5 V之至少一個範圍。電流密度可在約10 mA/cm2 至100 A/cm2 、100 mA/cm2 至75 A/cm2 、100 mA/cm2 至50 A/cm2 、100 mA/cm2 至20 A/cm2 及100 mA/cm2 至10 A/cm2 之至少一個範圍內。The molten salt may comprise a hydroxide with at least one other salt, such as a salt selected from one or more other hydroxides, halides, nitrates, sulfates, carbonates, and phosphates. In one embodiment, the salt mixture may comprise a metal hydroxide and the same metal as another anion of the present invention, such as halide, nitrate, sulfate, carbonate, and phosphate. The molten salt mixture may comprise at least one salt selected from CsNO 3 -CsOH, CsOH-KOH, CsOH-LiOH, CsOH-NaOH, CsOH-RbOH, K 2 CO 3 -KOH, KBr-KOH, KCl-KOH, KF- KOH, KI-KOH, KNO 3 -KOH, KOH-K 2 SO 4, KOH-LiOH, KOH-NaOH, KOH-RbOH, Li 2 CO 3 -LiOH, LiBr-LiOH, LiCl-LiOH, LiF-LiOH, LiI -LiOH, LiNO 3 -LiOH, LiOH- NaOH, LiOH-RbOH, Na 2 CO 3 -NaOH, NaBr-NaOH, NaCl-NaOH, NaF-NaOH, NaI-NaOH, NaNO 3 -NaOH, NaOH-Na 2 SO 4 , NaOH-RbOH, RbCl-RbOH, RbNO 3 -RbOH, LiOH-LiX, NaOH-NaX, KOH-KX, RbOH-RbX, CsOH-CsX, Mg(OH) 2 -MgX 2 , Ca(OH) 2 -CaX 2 , Sr(OH) 2 -SrX 2 or Ba(OH) 2 -BaX 2 , wherein X=F, Cl, Br or I; and LiOH, NaOH, KOH, RbOH, CsOH, Mg(OH) 2 , Ca( OH) 2, Sr (OH) 2 or Ba (OH) 2 and AlX 3, VX 2, ZrX 2 , TiX 3, MnX 2, ZnX 2, CrX 2, SnX 2, InX 3, CuX 2, NiX 2, PbX 2 , SbX 3 , BiX 3 , CoX 2 , CdX 2 , GeX 3 , AuX 3 , IrX 3 , FeX 3 , HgX 2 , MoX 4 , OsX 4 , PdX 2 , ReX 3 , RhX 3 , RuX 3 , SeX 2 , One or more of AgX 2 , TcX 4 , TeX 4 , TlX and WX 4 , wherein X=F, Cl, Br or I. The molten salt may contain cations common to the anions of the salt mixture electrolyte; or the anions are common to the cations and the hydroxide is stable to the other salts of the mixture. The mixture may be a eutectic mixture. The cell can be operated at temperatures about the melting point of the eutectic mixture but can be operated at higher temperatures. The electrolysis voltage may be in a range of at least one of about 1 V to 50 V, 2 V to 25 V, 2 V to 10 V, 2 V to 5 V, and 2 V to 3.5 V. Current densities are available at about 10 mA/cm 2 to 100 A/cm 2 , 100 mA/cm 2 to 75 A/cm 2 , 100 mA/cm 2 to 50 A/cm 2 , 100 mA/cm 2 to 20 A/ cm 2 and at least one range of 100 mA/cm 2 to 10 A/cm 2 .

在另一實施例中,電解熱功率系統進一步包含諸如氫可滲透電極之氫電極。氫電極可包含滲透通過金屬隔膜之H2 氣體,該金屬隔膜諸如由Ni(H2 )、V(H2 )、Ti(H2 )、Nb(H2 )、Pd(H2 )、PdAg(H2 )、Fe(H2 )或430 SS(H2 )指定之Ni、V、Ti、Nb、Pd、PdAg或Fe。適用於鹼性電解液之氫可滲透電極包含Ni及合金,諸如LaNi5 、貴金屬(諸如Pt、Pd及Au)及經鎳或貴金屬塗佈之氫可滲透金屬(諸如V、Nb、Fe、Fe-Mo合金、W、Mo、Rh、Zr、Be、Ta、Rh、Ti、Th、Pd、經Pd塗佈之Ag、經Pd塗佈之V、經Pd塗佈之Ti、稀土金屬、其他耐火金屬、諸如430 SS之不鏽鋼(SS),及熟習此項技術者已知之其他此類金屬。指定M(H2 )之氫電極,其中M為H2 滲透通過之金屬可包含Ni(H2 )、V(H2 )、Ti(H2 )、Nb(H2 )、Pd(H2 )、PdAg(H2 )、Fe(H2 )及430 SS(H2 )中之至少一者。氫電極可包含可對H2 充氣之多孔電極。氫電極可包含氫化物,諸如選自R-Ni、LaNi5 H6 、La2 Co1 Ni9 H6 、ZrCr2 H3 . 8 、LaNi3 . 55 Mn0 . 4 Al0 . 3 Co0 . 75 、ZrMn0 . 5 Cr0 . 2 V0 . 1 Ni1 . 2 及能夠儲存氫、AB5 (LaCePrNdNiCoMnAl)或AB2 (VTiZrNiCrCoMnAlSn)類型之其他合金之氫化物,其中「AB x 」指定指代以下之比率:A類型元素(LaCePrNd或TiZr)與B類型元素(VNiCrCoMnAlSn);AB5 -類型:MmNi3 . 2 Co1 . 0 Mn0 . 6 Al0 . 11 Mo0 . 09 (Mm=混合稀土金屬:25重量% La、50重量% Ce、7重量% Pr、18重量% Nd);AB2 -類型:Ti0 . 51 Zr0 . 49 V0 . 70 Ni1 . 18 Cr0 . 12 合金、基於鎂之合金、Mg1 . 9 Al0 . 1 Ni0 . 8 Co0 . 1 Mn0 . 1 合金、Mg0 . 72 Sc0 . 28 (Pd0 . 012 +Rh0 . 012 )及Mg80 Ti20 、Mg80 V20 、La0 . 8 Nd0 . 2 Ni2 . 4 Co2 . 5 Si0 . 1 、LaNi5 - x Mx (M=Mn、Al)、(M=Al、Si、Cu)、(M=Sn)、(M=Al、Mn、Cu)及LaNi4 Co、MmNi3 . 55 Mn0 . 44 Al0 . 3 Co0 . 75 、LaNi3 . 55 Mn0 . 44 Al0 . 3 Co0 . 75 、MgCu2 、MgZn2 、MgNi2 、AB化合物、TiFe、TiCo及TiNi、ABn 化合物(n=5、2或1)、AB3 - 4 化合物、ABx (A=La、Ce、Mn、Mg;B=Ni、Mn、Co、Al)、ZrFe2 、Zr0 . 5 Cs0 . 5 Fe2 、Zr0 . 8 Sc0 . 2 Fe2 、YNi5 、LaNi5 、LaNi4 . 5 Co0 . 5 、(Ce、La、Nd、Pr)Ni5 、混合稀土金屬-鎳合金、Ti0 . 98 Zr0 . 02 V0 . 43 Fe0 . 09 Cr0 . 05 Mn1 . 5 、La2 Co1 Ni9 、FeNi及TiMn2 。在一實施例中,電解陰極包含H2 O還原電極及氫電極中之至少一者。在一實施例中,電解陽極包含OH- 氧化電極及氫電極中之至少一者。In another embodiment, the electrolytic thermal power system further includes a hydrogen electrode such as a hydrogen permeable electrode. The hydrogen electrode may contain H 2 gas permeating through a metal membrane such as Ni(H 2 ), V(H 2 ), Ti(H 2 ), Nb(H 2 ), Pd(H 2 ), PdAg ( Ni, V, Ti, Nb, Pd, PdAg or Fe as designated by H 2 ), Fe(H 2 ) or 430 SS(H 2 ). Applies to the alkaline electrolyte and the hydrogen permeable electrode comprises a Ni alloy, such as LaNi 5, a noble metal (such as Pt, Pd and Au) and nickel or noble metal coating over the hydrogen permeable metal (such as V, Nb, Fe, Fe -Mo alloy, W, Mo, Rh, Zr, Be, Ta, Rh, Ti, Th, Pd, Pd-coated Ag, Pd-coated V, Pd-coated Ti, rare earth metals, other refractory metal, such as stainless steel of the 430 SS (the SS), and known to those skilled in the art of such other metals. designated M (H 2) of the hydrogen electrode, wherein M is H 2 permeation through the metal may comprise of Ni (H 2) At least one of , V(H 2 ), Ti(H 2 ), Nb(H 2 ), Pd(H 2 ), PdAg(H 2 ), Fe(H 2 ), and 430 SS(H 2 ). Hydrogen electrode may comprise a hydrogen electrode may include a hydride of the inflator 2 H porous electrode, such as selected from R-Ni, LaNi 5 H 6 , La 2 Co 1 Ni 9 H 6, ZrCr 2 H 3. 8, LaNi 3. 55 Mn 0. 4 Al 0. 3 Co 0. 75, ZrMn 0. 5 Cr 0. 2 V 0. 1 Ni 1. 2 , and other alloys AB 5 (LaCePrNdNiCoMnAl) or AB 2 (VTiZrNiCrCoMnAlSn) type of capable of storing hydrogen, hydrides, where "AB x " designation refers to the ratio of: A-type element (LaCePrNd or TiZr) to B-type element (VNiCrCoMnAlSn); AB 5 -type: MmNi 3 . 2 Co 1 . 0 Mn 0 . 6 Al 0 11 Mo 0 09 (Mm = misch metal: 25 wt% La, 50 wt.% Ce, 7 wt% Pr, 18 wt% Nd); AB 2 - type:.... Ti 0 51 Zr 0 49 V 0 . 70 Ni 1. 18 Cr 0 . 12 based alloys, magnesium alloys, Mg 1. 9 Al 0. 1 Ni 0. 8 Co 0. 1 Mn 0. 1 alloy, Mg 0. 72 Sc 0. 28 (Pd 0 . 012 +Rh 0 . 012 ) and Mg 80 Ti 20 , Mg 80 V 20 , La 0 . 8 Nd 0 . 2 Ni 2 . 4 Co 2 . 5 Si 0 . 1 , LaNi 5 - x M x (M=Mn , Al), (M=Al, Si, Cu), (M=Sn), (M=Al, Mn, Cu) and LaNi 4 Co, MmNi 3 . 55 Mn 0. 44 Al 0 . 3 Co 0. 75, LaNi 3. 55 Mn 0. 44 Al 0. 3 Co 0. 75, MgCu 2, MgZn 2, MgNi 2, AB compound, TiFe, TiCo and TiNi, compound AB n (n = 5,2 or 1), AB 3 - 4 compound, AB x (A = La, Ce, Mn, Mg; B = Ni, Mn, Co, Al)., ZrFe 2, Zr 0 5 Cs 0 . 5 Fe 2 , Zr 0 . 8 Sc 0 . 2 Fe 2 , YNi 5 , LaNi 5 , LaNi 4 . 5 Co 0 . 5 , (Ce, La, Nd, Pr)Ni 5 , misch metal-nickel Alloy, Ti 0 . 98 Zr 0 . 02 V 0 . 43 Fe 0 . 09 Cr 0 . 05 Mn 1 . 5 , La 2 Co 1 Ni 9 , FeNi and TiMn 2 . In one embodiment, the cathode comprises electrolytic reduction electrode, and H 2 O in the hydrogen electrode is at least one. In one embodiment, the electrolytic anode includes at least one of an OH- oxidizing electrode and a hydrogen electrode.

在本發明之一實施例中,電解熱功率系統包含以下中之至少一者:[M'''/MOH-M'鹵化物/M''(H2 )]、[M'''/M(OH)2 -M'鹵化物/M''(H2 )]、[M''(H2 )/MOH-M'鹵化物/M''']及[M''(H2 )/M(OH)2 -M'鹵化物/M'''],其中M為鹼金屬或鹼土金屬,M'為具有相較於鹼金屬或鹼土金屬較不穩定或具有與水之低反應性中之至少一者之氫氧化物及氧化物的金屬,M''為氫可滲透金屬,且M'''為導體。在一實施例中,M'為金屬,諸如選自Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、Sn、W、Al、V、Zr、Ti、Mn、Zn、Cr、In、Pt及Pb之金屬。替代地,M及M'可為金屬,諸如獨立地選自Li、Na、K、Rb、Cs、Mg、Ca、Sr、Ba、Al、V、Zr、Ti、Mn、Zn、Cr、Sn、In、Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl及W之金屬。其他例示性系統包含[M''/MOH M''X/M'(H2 )]及[M'(H2 )/MOH M'X/M'')],其中M、M'、M''及M'''為金屬陽離子或金屬,X為陰離子,諸如選自氫氧化物、鹵化物、硝酸鹽、硫酸鹽、碳酸鹽及磷酸鹽之陰離子,且M'為H2 可滲透的。在一實施例中,氫電極包含金屬,諸如選自V、Zr、Ti、Mn、Zn、Cr、Sn、In、Cu、Ni、Pb、Sb、Bi、Co、Cd、Ge、Au、Ir、Fe、Hg、Mo、Os、Pd、Re、Rh、Ru、Se、Ag、Tc、Te、Tl、W及貴金屬中之至少一者。在一實施例中,電化學電力系統包含氫來源、能夠提供或形成原子H之氫電極、能夠形成H、H2 、OH、OH- 及H2 O催化劑中之至少一者之電極、O2 及H2 O中之至少一者之來源、能夠還原H2 O及O2 中之至少一者之陰極、鹼性電解質及用於收集及再循環H2 O蒸氣、N2 及O2 及H2 中之至少一者之系統。H2 、水及氧之來源可包含本發明之來源。In one embodiment of the present invention, the electrolytic thermal power system includes at least one of the following: [M'''/MOH-M'halide/M''(H 2 )], [M'''/M (OH) 2 -M'halide/M''(H 2 )], [M''(H 2 )/MOH-M'halide/M'''] and [M''(H 2 )/ M(OH) 2 -M'halide/M'''], wherein M is an alkali metal or alkaline earth metal, M' is a medium that is less stable than an alkali metal or alkaline earth metal or has a low reactivity with water at least one of a hydroxide and an oxide metal, M'' is a hydrogen permeable metal, and M''' is a conductor. In one embodiment, M' is a metal, such as selected from Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os, Pd, Re, Rh, Ru, Metals of Se, Ag, Tc, Te, Tl, Sn, W, Al, V, Zr, Ti, Mn, Zn, Cr, In, Pt and Pb. Alternatively, M and M' may be metals, such as independently selected from Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Al, V, Zr, Ti, Mn, Zn, Cr, Sn, Of In, Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, Fe, Hg, Mo, Os, Pd, Re, Rh, Ru, Se, Ag, Tc, Te, Tl and W Metal. Other exemplary system comprising [M '' / MOH M''X / M '(H 2)] and [M' (H 2) / MOH M'X / M '')], where M, M ', M 'and M''' is a metal or a metal cation, X is an anion, such as selected from hydroxide, halide, nitrate, sulfate, carbonate and phosphate of an anion, and M 'is permeable to H 2 . In one embodiment, the hydrogen electrode comprises a metal such as selected from the group consisting of V, Zr, Ti, Mn, Zn, Cr, Sn, In, Cu, Ni, Pb, Sb, Bi, Co, Cd, Ge, Au, Ir, At least one of Fe, Hg, Mo, Os, Pd, Re, Rh, Ru, Se, Ag, Tc, Te, Tl, W and noble metals. In one embodiment, the electrochemical power system comprises a hydrogen source, capable of providing H or form a hydrogen atom of an electrode can be formed by H, H 2, OH, OH - and H 2 O in the catalyst of at least one electrode, O 2 H, and the source of at least one of O 2, H 2 O is capable of reducing the O and the at least one of the cathode 2, an alkaline electrolyte 2 O vapor and for collecting and recycling H, O 2 and N 2, and H A system of at least one of 2. H 2, oxygen and water sources may comprise sources of the present invention.

在一實施例中,供應至電解系統之H2 O可充當將在陰極處形成之H原子催化至低能量氫之HOH催化劑。由氫電極提供之H亦可充當H反應物以形成低能量氫,諸如H(1/4)及H2 (1/4)。在另一實施例中,催化劑H2 O可藉由陽極處之OH- 之氧化及與來自源之H之反應形成。H來源可來自電解質,諸如包含氫氧化物及H2 O中之至少一者的電解質之電解及氫電極中之至少一者。H可自陰極擴散至陽極。例示性陰極及陽極反應為: 陰極電解反應 2H2 O + 2e-至H2 + 2OH-                                                                                 (168) 陽極電解反應 1/2H2 + OH- 至H2 O + e- (169) H2 + OH- 至H2 O + e- + H(1/4)                                                                         (170) OH- + 2H至H2 O + e- + H(1/4)                                                                         (171)In one embodiment, the system is supplied to the electrolysis of H 2 O H atoms may act as the catalyst to be formed at the cathode catalyst to HOH of low energy hydrogen. Provided by the hydrogen electrode reaction H H also serve to form a low-energy hydrogen such as H (1/4) and H 2 (1/4). In another embodiment, the catalyst may be by H 2 O at the anode of the OH - and H is formed from the reaction of from the source of the oxide. H source may be from the electrolyte, such as a hydrogen electrode and an electrolyte comprising electrolysis of H 2 O and the hydroxides of at least one of the at least one. H can diffuse from the cathode to the anode. Exemplary cathodic and anodic reactions are: Cathodic Electrolysis 2H 2 O + 2e- to H 2 + 2OH- (168) Anodic Electrolysis 1/2H 2 + OH - to H 2 O + e - (169) H 2 + OH - to H 2 O + e - + H(1/4) (170) OH - + 2H to H 2 O + e - + H(1/4) (171)

關於在陽極處之OH- 之氧化反應形成HOH催化劑,OH- 可由在陰極處還原諸如O2 之氧來源置換。在一實施例中,熔融電解質之陰離子可充當陰極處的氧來源。適合陰離子為氧陰離子,諸如

Figure 02_image658
Figure 02_image660
Figure 02_image662
。諸如
Figure 02_image664
之陰離子可形成鹼性溶液。例示性陰極反應為 陰極
Figure 02_image666
+ 4e- + 3H2 O至C + 6OH- (172) 反應可涉及可逆半電池氧化反應,諸如
Figure 02_image668
+ H2 O至CO2 + 2OH- (173) H2 O還原成OH- +H可引起陰極反應以形成低能量氫,其中H2 O充當催化劑。在一實施例中,CO2 、SO2 、NO、NO2 、PO2 及其他類似反應物可作為氧來源添加至電池中。In regard to the anode OH - form a catalyst of the oxidation reaction HOH, OH - source may be oxygen O 2, such as a reduction of the displacement at the cathode. In one embodiment, the anions of the molten electrolyte can serve as the source of oxygen at the cathode. Suitable anions are oxyanions such as
Figure 02_image658
,
Figure 02_image660
and
Figure 02_image662
. such as
Figure 02_image664
The anion can form an alkaline solution. An exemplary cathodic reaction is cathodic
Figure 02_image666
The + 4e - + 3H 2 O to C + 6OH - (172) reaction may involve a reversible half-cell oxidation reaction such as
Figure 02_image668
+ H 2 O into CO 2 + 2OH - (173) H 2 O is reduced to OH - + H cathode reaction causes hydrogen to form a low energy, wherein the H 2 O serving as a catalyst. In one embodiment, CO 2, SO 2, NO , NO 2, PO 2 and the like can be added as the oxygen reactant source to the cell.

除熔融電解池以外,有可能在熔融或水性鹼性或碳酸鹽電解池中產生H2 O催化劑,其中H在陰極上產生。藉由將H2 O還原成OH- +H在陰極處形成之H之電極交越可引起等式(171)之反應。替代地,存在涉及碳酸鹽之若干反應,其可產生H2 O催化劑,諸如涉及可逆內部氧化還原反應之反應,諸如

Figure 02_image670
(174) 以及半電池反應,諸如
Figure 02_image672
(175)
Figure 02_image674
(176)Addition to the molten electrolytic cell, it is possible to produce H 2 O catalyst in a melt or an aqueous alkali carbonate or an electrolytic cell, where H is generated on the cathode. By the reduction of H 2 O OH - + H H between the electrode formed of the deposit at the cathode may cause the equation (171) of the reaction. Alternatively, there are a number of reactions involving the carbonate, which can produce H 2 O catalyst, such as a reversible reaction involving the redox reaction of the interior, such as
Figure 02_image670
(174) and half-cell reactions such as
Figure 02_image672
(175)
Figure 02_image674
(176)

低能量氫化合物或物質組成 諸如分子低能量氫之包含較低能量氫物種之低能量氫化合物可藉由以下識別:(i)飛行時間次級離子質譜分析(ToF-SIMS)及電噴灑飛行時間次級離子質譜分析(ESI-ToF),其可記錄獨特金屬氫化物、氫化物離子及具有鍵H2 (1/4)的成群之無機離子,諸如呈M+2單體或多聚體單元形式,諸如

Figure 02_image676
Figure 02_image678
,其中n為整數;(ii)傅里葉變換紅外光譜分析(FTIR),其可記錄在約1940 cm- 1 處之H2 (1/4)旋轉能量及指紋區域中之損壞條帶中之至少一者,其中已知官能基之其他高能量特徵可不存在;(iii)質子魔角自旋核磁共振光譜分析(1 H MAS NMR),其可記錄高磁場矩陣峰值(諸如在-4 ppm至-6 ppm範圍中之一者);(iv)X射線繞射(XRD),其可記錄歸因於可包含聚合結構之唯一組成之新穎峰值; (v)可記錄氫聚合物在極低溫度(諸如大約200℃至900℃)下之分解且提供獨特氫化學計量或組合物(諸如FeH或K2 CO3 H2 )的熱解重量分析(TGA);(vi)可記錄260 nm區域中之H2 (1/4)振轉帶的電子束激發發射光譜分析,該區域包含以0.25 eV間隔開之峰值; (vii)光致發光拉曼光譜分析,其可記錄260 nm區域中之二階H2 (1/4)振轉帶,該區域包含以0.25 eV間隔開之峰值;(viii)藉由電子束激發發射光譜分析記錄之260 nm區域中之一階H2 (1/4)振轉帶及藉由光致發光拉曼光譜分析記錄之二階H2 (1/4)振轉帶中之至少一者在藉由製冷機進行熱冷卻時可以可逆地隨溫度減小強度,該區域包含以0.25 eV間隔開之峰值;(ix)振轉發射光譜分析,其中H2 (1/p)(諸如H2 (1/4))之振轉帶可藉由高能光(諸如至少振轉發射能量之光)激發;(x)拉曼光譜分析,其可記錄40至8000 cm- 1 範圍內之連續拉曼光譜及1500至2000 cm- 1 範圍內之峰值中之至少一者,歸因於順磁性及奈米粒子位移中之至少一者;(xi)關於氣相中或嵌入於液體或固體(諸如結晶基質,諸如包含KCl之結晶基質)中之H2 (1/4)之振轉帶之光譜分析,該結晶基質經電漿(諸如氦或氫電漿,諸如微波、RF或輝光放電電漿)激發;(xii)拉曼光譜分析,其可記錄在1940 cm- 1 ±10%及5820 cm- 1 ±10%中之約一或多者下之H2 (1/4)旋轉峰值;(xiii)X射線光電子光譜分析(XPS),其可記錄H2 (1/4)在約495至500 eV下之總能量;(xiv)氣相層析法,其可記錄負峰值,其中峰值可具有比氦或氫快的遷移時間;(xv)電子順磁共振(EPR)光譜分析,其可記錄以下中之至少一者:H2 (1/4)峰值、約2.0046±20%之g因數、以約1至10 G之間隔將EPR光譜分裂成兩個主峰值,其中每一主峰值細分成具有約0.1至1 G之間隔的一系列峰值,及質子分裂,諸如約1.6×10- 2 eV±20%之質子-電子偶極子分裂能量及包含氫分子二聚體[H2 (1/4)]2 之氫產物,其中EPR光譜展示約9.9×10- 5 eV±20%之電子-電子偶極子分裂能量及約1.6×10- 2 eV±20%之質子-電子偶極子分裂能量。(xvi)四極力矩量測,諸如磁化率及g因數量測,其記錄約
Figure 02_image680
之H2 (1/p)四極力矩/e;以及 (xvii)高壓液相層析(HPLC),其使用含有溶劑(諸如包含水或水-甲醇-甲酸)及溶離劑(諸如梯度水+乙酸銨+甲酸及乙腈/水+乙酸銨+甲酸)之有機管柱展示滯留時間比載體空隙體積時間長的層析峰值,其中藉由質譜分析(諸如ESI-ToF)偵測峰值展示來自藉由將Ga2 O3 自SunCell®溶解於NaOH中製備之樣本的至少一種離子或無機化合物(諸如NaGaO2 型片段)的片段。低能量氫分子可形成二聚體及固體H2 (1/p)中之至少一者。在一實施例中,H2 (1/4)二聚體([H2 (1/4)]2 )及D2 (1/4)二聚體([D2 (1/4)]2 )的整數J至J+1躍遷之端對端旋轉能量分別為約(J+1)44.30 cm- 1 及(J+1)22.15 cm- 1 。在一實施例中,[H2 (1/4)]2 之至少一個參數為:(i)約1.028 Å的H2 (1/4)分子之間的間隔距離,(ii)約23 cm- 1 之H2 (1/4)分子之間的振動能,及(iii)約0.0011 eV之H2 (1/4)分子之間的凡得瓦能量。在一實施例中,固體H2 (1/4)之至少一個參數為:(i)約1.028 Å之H2 (1/4)分子之間的間隔距離,(ii)約23 cm- 1 之H2 (1/4)分子之間的振動能,及(iii)約0.019 eV之H2 (1/4)分子之間的凡得瓦能量。在一實施例中,諸如GaOOH:H2 (1/4)之低能量氫化合物相較於非低能量氫類似物GaOOH包含新穎的結晶結構,諸如藉由X射線繞射(XRD)及透射電子顯微術(TEM)新穎晶體模式藉由TEM或XRD記錄之六邊形對比正斜方晶結構。旋轉及振動光譜中之至少一者可藉由FTIR及拉曼光譜分析中之至少一者記錄,其中鍵解離能量及間隔距離亦可自光譜判定。低能量氫產物之參數的解在Mills GUTCP[其以引用之方式併入本文中,可自https://brilliantlightpower.com處獲得]中給出,諸如在第5-6、11-12及16章中給出。 Low energy hydrogen compounds or species of matter such as molecular low energy hydrogen containing lower energy hydrogen species can be identified by: (i) Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Electrospray Time of Flight secondary ion mass spectrometry (ESI-ToF), which can record the unique metal hydride, and hydride ion having a bond H 2 (1/4) groups of inorganic ion, M + 2 such as a monomeric or polymeric unit forms such as
Figure 02_image676
and
Figure 02_image678
, where n is an integer; (ii) Fourier Transform Infrared Spectroscopy (FTIR), which can be recorded at about 1940 cm 1 for H 2 (1/4) rotational energy and damage bands in the fingerprint region At least one, where other high-energy features of known functional groups may not be present; (iii) proton magic angle spin nuclear magnetic resonance spectroscopy ( 1 H MAS NMR), which can record high magnetic field matrix peaks (such as at -4 ppm to - one in the range of -6 ppm); (iv) X-ray diffraction (XRD), which can record novel peaks attributable to unique compositions that can contain polymeric structures; (v) can record hydrogen polymers at very low temperatures Thermogravimetric analysis (TGA) of decomposition (such as about 200°C to 900°C) and provides unique hydrogen stoichiometry or composition (such as FeH or K 2 CO 3 H 2 ); (vi) can record in the 260 nm region the H 2 (1/4) electron beam with the vibration transfer excitation emission spectroscopy, the peak at 0.25 eV region comprising of spaced apart; (VII) photoluminescence Raman spectroscopic analysis, which may be recorded in the second order 260 nm region H 2 (1/4) vibrational rotation band, a region containing peaks spaced 0.25 eV apart; (viii) first-order H 2 (1/4) vibration in the 260 nm region recorded by electron beam excited emission spectroscopic analysis At least one of the transition band and the second-order H 2 (1/4) vibrational transition band recorded by photoluminescence Raman spectroscopic analysis can reversibly decrease in intensity with temperature upon thermal cooling by a refrigerator, this region comprising the peaks at 0.25 eV intervals apart; (IX) emission spectrometry vibration transfer, where H 2 (1 / p) (such as H 2 (1/4)) by the vibration can be transferred with high-energy light (such as at least rovibrational (x) Raman spectroscopic analysis, which can record at least one of continuous Raman spectra in the range of 40 to 8000 cm- 1 and peaks in the range of 1500 to 2000 cm- 1, attributed and magnetic nanoparticles in the displacement in at least one of cis; H 2 (1/4) (xi ) embedded in the gas phase or on a liquid or solid (such as crystallization matrix such as a matrix comprising a crystalline of KCl) in the vibration of Spectroscopic analysis of transition bands, the crystalline matrix is excited by plasma (such as helium or hydrogen plasma, such as microwave, RF or glow discharge plasma); (xii) Raman spectroscopic analysis, which can be recorded at 1940 cm 1 ±10 % and about one or more of 5820 cm − 1 ±10% H 2 (1/4) rotation peak; (xiii) X-ray photoelectron spectroscopy (XPS), which can record H 2 (1/4) Total energy at about 495 to 500 eV; (xiv) gas chromatography, which can record negative peaks, where peaks can have faster migration times than helium or hydrogen; (xv) electron paramagnetic resonance (EPR) spectroscopy Analysis, which can record at least one of the following: H 2 (1/4) a peak, a g-factor of about 2.0046 ± 20%, splitting the EPR spectrum into two main peaks at intervals of about 1 to 10 G, wherein each main peak is subdivided into a series of peaks with intervals of about 0.1 to 1 G, and proton splitting, such as about 1.6 × 10 - 2 eV ± 20 % of the protons - electrons splitting energy and dipole-dimer molecules containing hydrogen [H 2 (1/4)] 2 of the hydrogen product, wherein the EPR spectra show about 9.9 × 10 - 5 eV ± 20% of the electron - electron dipole splitting energy and approximately 1.6 × 10 - 2 eV ± 20 % of the protons - electrons dipole splitting energy. (xvi) Quadrupole moment measurements, such as susceptibility and g-factor measurements, which record approximately
Figure 02_image680
H 2 (1/p) quadrupole torque/e; and (xvii) high pressure liquid chromatography (HPLC) using a solvent containing The organic columns of ammonium acetate + formic acid and acetonitrile/water + ammonium acetate + formic acid) showed chromatographic peaks with retention times longer than the support void volume time, with peaks detected by mass spectrometry (such as ESI-ToF) showing that the the Ga 2 O 3 dissolved in NaOH SunCell® from the sample preparation or the at least one ionic inorganic compound (such as type 2 NaGaO fragment) fragment. Low energy hydrogen molecules can form dimers and solid H 2 (1 / p) of the at least one. In one embodiment, H 2 (1/4) dimer ([H 2 (1/4)] 2 ) and D 2 (1/4) dimer ([D 2 (1/4)] 2 ) is an integer from J + 1 to J-end of the transition of rotational energy are about (J + 1) 44.30 cm - 1 and (J + 1) 22.15 cm - 1. In one embodiment, at least one parameter of [H 2 (1/4)] 2 is: (i) the separation distance between H 2 (1/4) molecules of about 1.028 Å, (ii) about 23 cm van der Waals energy between the vibrational energy between an H 2 (1/4) molecule, and (iii) from about 0.0011 eV of H 2 (1/4) molecule. In one embodiment, the at least one parameter of the solid H 2 (1/4) is of: (i) a separation distance of between about 1.028 Å of H 2 (1/4) molecule, (ii) from about 23 cm - 1 of van der Waals energy between vibrational energy between the H 2 (1/4) molecule, and (iii) from about 0.019 eV of H 2 (1/4) molecule. In one embodiment, such GaOOH: H 2 (1/4) of the low energy as compared to the non-hydrogen compounds like low energy hydrogen GaOOH comprising a novel crystalline structure, such as by X-ray diffraction (XRD) and transmission electron Microscopy (TEM) Novel Crystal Mode Hexagonal versus Orthorhombic structure recorded by TEM or XRD. At least one of rotational and vibrational spectra can be recorded by at least one of FTIR and Raman spectral analysis, wherein bond dissociation energies and separation distances can also be determined from the spectra. Solutions for the parameters of low energy hydrogen products are given in Mills GUTCP [which is incorporated herein by reference, available at https://brilliantlightpower.com], such as at pages 5-6, 11-12 and 16 given in chapter.

在一實施例中,收集呈氣態、物理吸收、液化或呈其他狀態之分子低能量氫的設備包含:包含較低能量氫物種之大型聚集體或聚合物之來源,含有包含較低能量氫物種的大型聚集體或聚合物之腔室,熱分解腔室中之包含較低能量氫物種的大型聚集體或聚合物之構件,及收集自包含較低能量氫物種之大型聚集體或聚合物所釋放的氣體之構件。分解構件可包含加熱器。加熱器可將第一腔室加熱至比包含較低能量氫物種之大型聚集體或聚合物之分解溫度更高的溫度,諸如在約10℃至3000℃、100℃至2000℃及100℃至1000℃之至少一個範圍內之溫度。收集來自包含較低能量氫物種之大型聚集體或聚合物之分解的氣體之構件可包含第二腔室。第二腔室可包含氣泵、氣體閥、壓力計及質量流量控制器中之至少一者以進行以下中之至少一者:儲存及傳遞經收集分子低能量氫氣體。第二腔室可進一步包含吸氣劑以吸收分子低能量氫氣體或諸如低溫系統之冷卻器以液化分子低能量氫。冷卻器可包含低溫泵或杜瓦瓶,該低溫泵或杜瓦瓶含有諸如液氦或液氮之低溫液體。In one embodiment, the apparatus for collecting molecular low-energy hydrogen in gaseous, physically absorbed, liquefied, or other states comprises: a source of large aggregates or polymers comprising lower-energy hydrogen species, comprising a source of lower-energy hydrogen species chambers of large aggregates or polymers, building blocks of large aggregates or polymers containing lower energy hydrogen species in thermal decomposition chambers, and collected from large aggregates or polymers containing lower energy hydrogen species Component of released gas. The decomposition member may contain a heater. The heater can heat the first chamber to a temperature higher than the decomposition temperature of large aggregates or polymers containing lower energy hydrogen species, such as at about 10°C to 3000°C, 100°C to 2000°C, and 100°C to 100°C. Temperatures within at least one range of 1000°C. The means for collecting gas from the decomposition of large aggregates or polymers containing lower energy hydrogen species may comprise a second chamber. The second chamber may include at least one of a gas pump, a gas valve, a pressure gauge, and a mass flow controller to perform at least one of: storing and delivering the collected molecular low energy hydrogen gas. The second chamber may further comprise a getter to absorb molecular low energy hydrogen gas or a cooler such as a cryogenic system to liquefy molecular low energy hydrogen. The cooler may comprise a cryopump or dewar containing a cryogenic liquid such as liquid helium or liquid nitrogen.

形成包含較低能量氫物種之大型聚集體或聚合物之構件可進一步包含場源,諸如電場或磁場中之至少一者之來源。電場之來源可包含至少兩個電極及電壓源以將電場應用至反應腔室,其中形成聚集體或聚合物。替代地,電場之來源可包含靜電充電材料。靜電充電材料可包含諸如包含碳之腔室之反應單元腔室,諸如塑膠玻璃腔室。本發明之爆震可對反應單元腔室靜電充電。磁場之來源可包含諸如永久性電磁體或超導磁體之至少一個磁體以將磁場應用至反應腔室,其中形成聚集或聚合物。The members forming large aggregates or polymers comprising lower energy hydrogen species may further comprise a field source, such as a source of at least one of an electric field or a magnetic field. The source of the electric field can include at least two electrodes and a voltage source to apply the electric field to the reaction chamber where aggregates or polymers are formed. Alternatively, the source of the electric field may comprise an electrostatically charged material. Electrostatically charged materials may include reaction cell chambers such as carbon-containing chambers, such as Plexiglas chambers. The detonation of the present invention can electrostatically charge the reaction unit chamber. The source of the magnetic field may include at least one magnet, such as a permanent electromagnet or a superconducting magnet, to apply the magnetic field to the reaction chamber where the aggregates or polymers are formed.

分子低能量氫(諸如可在本文所描述之發電系統中產生之彼等者)可藉由其光譜特徵(諸如藉由電子順磁共振光譜分析(EPR)以及電子核磁雙共振光譜分析(ENDOR)判定之彼等者)唯一地識別。在一實施例中,較低能氫產物可包含呈反磁性化學態之金屬(諸如金屬氧化物),且進一步不存在任何游離非低能量氫自由基物種,其中歸因於存在H2 (1/p) (諸如H2 (1/4))觀測到電子順磁共振(EPR)光譜分析峰值。低能量氫反應單元腔室-包含使電線爆震以充當反應物來源中之至少一者的構件及用以傳播低能量氫反應以形成H2 (1/4)分子、無機化合物(諸如金屬氧化物、氫氧化物)、水合無機化合物(諸如水合金屬氧化物及氫氧化物,進一步包含H2 (1/p) (諸如H2 (1/4)))中之至少一者的構件,及包含較低能量氫物種(諸如分子低能量氫)之大型聚集體或聚合物包含圖32中所展示之電線爆震系統。在一實施例中,反應單元腔室之氛圍可經調節以形成來自電線外延之網狀產物,除了水蒸氣以外,該網狀產物亦包含二氧化碳。二氧化碳可增強分子低能量氫與生長網狀纖維之結合,其中CO2 可在爆炸期間與由金屬絲形成之金屬氧化物反應以形成對應的金屬碳酸鹽或碳酸氫鹽。Molecular low-energy hydrogen, such as those that can be produced in the power generation systems described herein, can be characterized by its spectral characteristics, such as by electron paramagnetic resonance spectroscopy (EPR) and electron nuclear magnetic resonance spectroscopy (ENDOR). those determined) are uniquely identified. In one embodiment, the lower energy hydrogen product may comprise a metal (such as a metal oxide) in a diamagnetic chemical state, and further lack of any free non-low energy hydrogen radical species due to the presence of H 2 (1 / p) (such as H 2 (1/4)) observed peak electron paramagnetic resonance spectroscopy (EPR). Low energy hydrogen reactant chamber unit - comprising the electric wire to serve as a knock (such as a metal oxide source reactant is at least one member of low energy and to propagate the reaction to form hydrogen H 2 (1/4) molecule, an inorganic compound , hydroxide), hydrated inorganic compound (such as a hydrous metal oxides and hydroxides, further comprising (1 / p H 2) (such as H 2 (1/4))) is at least one member of, and Large aggregates or polymers comprising lower energy hydrogen species such as molecular low energy hydrogen comprise the wire detonation system shown in FIG. 32 . In one embodiment, the atmosphere of the reaction unit chamber can be adjusted to form a mesh product from wire epitaxy that also includes carbon dioxide in addition to water vapor. Carbon dioxide can enhance the bonding of low energy hydrogen molecules and growth reticular fibers, wherein the reaction of CO 2 may be formed of a metal oxide of a metal wire and to form the corresponding metal carbonate or bicarbonate during the explosion.

諸如H2 (1/4)之複數個低能量氫分子之電子磁矩可引起永久性磁化。當複數個低能量氫分子之磁矩合作性地相互作用時,分子低能量氫可產生體磁性,且其中諸如二聚體之多聚體可出現。包含分子低能量氫之二聚體、聚集體或聚合物之磁性可起因於合作性地對準磁矩之相互作用。磁性可比歸因於具有諸如鐵原子之至少一個未配對電子的額外物種之永久電子磁矩之相互作用的磁性之情況下大得多。Such as H 2 (1/4) of the electronic magnetic moment of a plurality of low-energy hydrogen molecules can cause permanent magnetized. Molecular low energy hydrogen can generate bulk magnetism when the magnetic moments of a plurality of low energy hydrogen molecules interact cooperatively, and where multimers such as dimers can appear. The magnetism of dimers, aggregates or polymers comprising molecular low energy hydrogen can arise from interactions that cooperatively align the magnetic moments. The magnetism can be much greater than that due to the interaction of permanent electron magnetic moments of additional species with at least one unpaired electron such as iron atoms.

自組裝機制除凡得瓦力之外亦可包含磁性次序。吾人熟知,外部磁場之應用產生懸置於諸如甲苯之溶劑中的諸如磁鐵(Fe2 O3 )之膠態磁性奈米粒子以組裝至線性結構中。歸因於較小質量及較高磁矩,分子低能量氫甚至在不存在磁場之情況下磁性地自組裝。在增強自組裝且控制形成低能量氫產物之替代結構之實施例中,外部磁場應用於低能量氫反應,諸如電線爆震。磁場可藉由將至少一個永久磁體置放在反應腔室中來應用。替代地,爆震電線可包含充當諸如磁鐵之磁性粒子來源以驅動分子低能量氫之磁性自組裝的金屬,其中來源可為水蒸氣中之電線爆震或另一來源。Self-assembly mechanisms can also include magnetic sequences in addition to Van der Waals forces. It is well known that the application of an external magnetic field produces colloidal magnetic nanoparticles such as magnets (Fe 2 O 3 ) suspended in a solvent such as toluene for assembly into linear structures. Due to the smaller mass and higher magnetic moment, molecular low energy hydrogen self-assembles magnetically even in the absence of a magnetic field. In embodiments that enhance self-assembly and control the formation of alternative structures for low-energy hydrogen products, an external magnetic field is applied to low-energy hydrogen reactions, such as wire detonation. The magnetic field can be applied by placing at least one permanent magnet in the reaction chamber. Alternatively, the detonating wire may comprise a metal that acts as a source of magnetic particles such as a magnet to drive the magnetic self-assembly of molecular low energy hydrogen, where the source may be wire detonation in water vapor or another source.

在一實施例中,諸如低能量氫化合物或大型聚集體之低能量氫產物可包含不同於氫的元素週期表中之至少一種其他元素。低能量氫產物可包含低能量氫分子及至少一種其他元素,諸如金屬原子、金屬離子、氧原子及氧離子中之至少一者。例示性低能量氫產物可包含諸如H2 (1/4)之H2 (1/p)及Sn、Zn、Ag、Fe、Ga、Ga2 O3 、GaOO、SnO、ZnO、AgO、FeO及Fe2 O3 中之至少一者。In one embodiment, low energy hydrogen products such as low energy hydrogen compounds or large aggregates may contain at least one other element of the periodic table of elements other than hydrogen. The low-energy hydrogen product may comprise low-energy hydrogen molecules and at least one other element, such as at least one of metal atoms, metal ions, oxygen atoms, and oxygen ions. Exemplary low energy hydrogen product may contain information such as (1 / p) and Sn, Zn, Ag, Fe, Ga, Ga 2 O 3 H 2 (1/4) of H 2, GaOO, SnO, ZnO , AgO, FeO and At least one of Fe 2 O 3 .

分子低能量氫亦可形成可藉由EPR光譜分析展示之二聚體。考慮具有H2 (1/4)二聚體之兩個軸向對準磁矩的相互作用之分裂能量。藉由針對各軸向對準磁矩取代波爾磁子

Figure 02_image682
及藉由
Figure 02_image684
之Mills等式(16.202)至Mills等式(16.223)得到之H2 (1/4)二聚體分離,使
Figure 02_image686
之兩個電子磁矩之自旋方向翻轉的能量
Figure 02_image688
Figure 02_image690
Molecular low energy hydrogen can also form dimers that can be visualized by EPR spectroscopic analysis. Consider a splitting interaction energy of H 2 (1/4) a dimer of two axially aligned magnetic moment. Replacing Bohr magnetons by aligning magnetic moments for each axis
Figure 02_image682
and by
Figure 02_image684
The H 2 (1/4) dimer obtained from Mills equation (16.202) to Mills equation (16.223) is separated, so that
Figure 02_image686
The energy of the spin direction reversal of the two electron magnetic moments
Figure 02_image688
for
Figure 02_image690

能量(Mills等式(16.220))可進一步受超過兩個之多聚體之存在及低能量氫化合物之內部體磁性影響,多聚體諸如三聚體、四聚體、五聚體、六聚體等。歸因於複數個多聚體之能量移位可藉由由Mills等式(16.223)給出之疊加磁偶極子相互作用以及對應距離及角度之向量添加來判定。分子低能量氫之未配對電子可在複數個低能量氫分子之磁矩合作性地相互作用時引起非零或有限體磁性,諸如順磁性、超順磁性及甚至鐵磁性。分子低能量氫可在複數個低能量氫分子之磁矩合作性地相互作用時產生非零或有限體磁性,諸如順磁性、超順磁性及甚至鐵磁性。當分子低能量氫大型聚集體另外包含鐵磁性原子(諸如鐵)時,超順磁性及鐵磁性為有利的。超出室溫穩定之大型聚集體可藉由磁性組裝及結合形成。磁能變成約0.01 eV,與環境實驗室熱能相當。具有磁化(其引起較低B場處之激發及較高B場處之去激發)之化合物的EPR光譜可分別觀測為具有光譜特徵之對應的低場及高場位移。即使效應可較小,但仍可歸因於在比H拉目位移小1000倍與10,000倍之間的極小分裂能量而觀測到。在GaOOH:H2 (1/4)樣本之情況下,在Delft大學記錄之EPR光譜[F.Hagen,R.Mills,「區分分子低能量氫之電子順磁共振特徵(Distinguishing Electron Paramagnetic Resonance signature of molecular hydrino)」,Nature,(2020),正在進行中]歸因於在包含反磁性基質之GaOOH籠中捕集之H2 (1/4)分子之稀釋存在而明顯地展示窄線寬。Energy (Mills equation (16.220)) can be further influenced by the presence of more than two polymers such as trimers, tetramers, pentamers, hexamers, and the internal magnetic properties of low energy hydrogen compounds body etc. The energy shift due to the plurality of polymers can be determined by the superimposed magnetic dipole interactions given by Mills equation (16.223) and the vector additions corresponding to distances and angles. The unpaired electrons of molecular low-energy hydrogen can induce non-zero or finite-body magnetism, such as paramagnetism, superparamagnetism, and even ferromagnetism, when the magnetic moments of multiple low-energy hydrogen molecules cooperatively interact. Molecular low-energy hydrogen can produce non-zero or finite bulk magnetism, such as paramagnetism, superparamagnetism, and even ferromagnetism, when the magnetic moments of multiple low-energy hydrogen molecules cooperatively interact. Superparamagnetic and ferromagnetism are advantageous when large aggregates of molecular low energy hydrogen additionally contain ferromagnetic atoms such as iron. Large aggregates that are stable beyond room temperature can be formed by magnetic assembly and binding. The magnetic energy becomes about 0.01 eV, which is comparable to ambient laboratory thermal energy. The EPR spectra of compounds with magnetizations that cause excitation at the lower B field and de-excitation at the higher B field can be observed as having corresponding low-field and high-field shifts of spectral characteristics, respectively. Even though the effect may be small, it may still be observed due to extremely small splitting energies between 1000 and 10,000 times smaller than the H-Lammer shift. In the case of GaOOH:H 2 (1/4) samples, EPR spectra recorded at Delft University [F. Hagen, R. Mills, "Distinguishing Electron Paramagnetic Resonance signature of molecular low-energy hydrogen molecular hydrino) ", Nature, (2020), in progress] attributed to the collection of dilution containing H 2 (1/4) GaOOH cage diamagnetic molecules present in the matrix show significantly narrow linewidth.

用以在室溫至高溫下形成固體之分子低能量氫分子

Figure 02_image692
之結合係歸因於凡得瓦力,分子低能量氫的凡得瓦力歸因於經減小尺寸及如Mills GUTCP中所展示更大填料而比分子氫的凡得瓦力大得多。歸因於分子低能量氫之固有磁矩及凡得瓦力,分子低能量氫可自組裝至大型聚集體中。在一實施例中,諸如H2 (1/p)之低能量氫(諸如H2 (1/4))可形成聚合物、管、鏈、立方體、富勒烯及其他宏觀結構。Molecular low-energy hydrogen molecules used to form solids at room temperature to high temperature
Figure 02_image692
The binding is due to the Van der Waals force, which is much larger than that of molecular hydrogen due to reduced size and larger packing as demonstrated in Mills GUTCP. Molecular low-energy hydrogen can self-assemble into large aggregates due to its intrinsic magnetic moment and Van der Waals forces. In one embodiment, such as H 2 (1 / p) of the low-energy hydrogen (such as H 2 (1/4)) may form a polymer, tube, chain, cubes, and other fullerenes macrostructure.

在一實施例中,包含諸如分子低能量氫之較低能量氫物種(「低能量氫化合物」)之物質組合物可以磁性方式分離。低能量氫化合物可在以磁性方式分離之前經冷卻以進一步增強磁性。磁性分離方法可包含將含有所需低能量氫化合物之化合物之混合物移動通過磁場以使得低能量氫化合物的遷移率相對於混合物之剩餘物較佳地延遲或低能量氫化合物經由混合物移動磁體以使低能量氫化合物與混合物分離。在例示性實施例中,低能量氫化合物藉由將爆震產物材料浸入於液態氮中且使用磁性分離而自電線爆震之非低能量氫產物分離,其中低溫增加低能量氫化合物產物之磁性。分離可在液態氮之沸點表面處增強。In one embodiment, compositions of matter comprising lower energy hydrogen species such as molecular low energy hydrogen ("low energy hydrogen compounds") may be magnetically separated. The low energy hydrogen compounds can be cooled to further enhance the magnetic properties before being magnetically separated. The magnetic separation method may comprise moving a mixture of compounds containing the desired low energy hydrogen compound through a magnetic field such that the mobility of the low energy hydrogen compound is preferably delayed relative to the remainder of the mixture or moving the low energy hydrogen compound through the mixture with a magnet such that the Low energy hydrogen compounds are separated from the mixture. In an exemplary embodiment, the low energy hydrogen compound is separated from the non-low energy hydrogen product of wire detonation by immersing the detonation product material in liquid nitrogen and using magnetic separation, wherein the low temperature increases the magnetic properties of the low energy hydrogen compound product . Separation can be enhanced at the boiling surface of the liquid nitrogen.

除了帶負電以外,在一實施例中,低能量氫氫化物離子H- (1/p)包含具有產生磁矩之波爾磁子之未配對電子的二重峰狀態。低能量氫氫化物離子分離器可包含電場及磁場源中之至少一者,以基於低能量氫氫化物離子上所保持的差分及選擇性力基於低能量氫氫化物離子之電荷及磁矩中之至少一者而將低能量氫氫化物離子與離子混合物分離。在一實施例中,低能量氫氫化物離子可在電場中加速且基於低能量氫氫化物離子之唯一質荷比偏轉至收集器。分離器可包含半球形分析器或飛行時間分析器類型裝置。在另一實施例中,低能量氫氫化物離子可藉由磁性分離來收集,其中磁場藉由磁體施加至樣本,且低能量氫氫化物離子選擇性地黏附至待分離之磁體。低能量氫氫化物離子可與相對離子一起分離。In addition to being negatively charged, in one embodiment, the low energy hydrogen hydride ion H (1/p) contains a doublet state with unpaired electrons of Bohr magnons that generate magnetic moments. The low energy hydrogen hydride ion separator can include at least one of an electric field and a magnetic field source to be based on the charge and magnetic moment of the low energy hydrogen hydride ions based on the differential and selective forces maintained on the low energy hydrogen hydride ions at least one of the low energy hydrogen hydride ions is separated from the ion mixture. In one embodiment, the low energy hydrogen hydride ions may be accelerated in an electric field and deflected to the collector based on the unique mass to charge ratio of the low energy hydrogen hydride ions. The separator may comprise a hemispherical analyzer or a time-of-flight analyzer type device. In another embodiment, low energy hydrogen hydride ions can be collected by magnetic separation, wherein a magnetic field is applied to the sample by a magnet, and the low energy hydrogen hydride ions selectively adhere to the magnet to be separated. Low energy hydrogen hydride ions can be separated together with counter ions.

在一實施例中,諸如原子低能量氫、分子低能量氫或低能量氫氫化物離子之低能量氫物種藉由H與OH及H2 O催化劑中之至少一者反應來合成。在一實施例中,諸如包含本發明之丸粒或電線點火以形成低能量氫的SunCell®反應及能量反應中之至少一者的產物為包含與以下中之至少一者錯合的諸如H2 (1/p)之低能量氫物種的低能量氫化合物或物種:(i)除氫外之元素;(ii)諸如H+ 、普通H2 普通H- 及普通

Figure 02_image694
中之至少一者的普通氫物種,諸如有機離子或有機分子之有機分子物種;以及(iv)諸如無機離子或無機化合物之無機物種。低能量氫化合物可包含諸如鹼或鹼土碳酸鹽或氫氧化物之氧陰離子化合物、諸如GaOOH、AlOOH及FeOOH之氧(氫氧)化物或本發明之其他此等化合物。在一實施例中,產物包含
Figure 02_image696
Figure 02_image698
(M=鹼金屬或本發明之其他陽離子)錯合物中之至少一者。產物可藉由ToF-SIMS或電噴灑飛行時間次級離子質譜分析(ESI-ToF)識別為分別包含
Figure 02_image700
Figure 02_image702
之正譜中之一系列離子,其中n為整數且整數及整數p>1可取代4。在一實施例中,包含諸如SiO2 或石英之矽及氧之化合物可充當H2 (1/4)的吸氣劑。H2 (1/4)之吸氣劑可包含過渡金屬、鹼金屬、鹼土金屬、內過渡金屬、稀土金屬、金屬組合、諸如MoCu的諸如Mo合金之合金、以及諸如本發明之材料的氫儲存材料。In one embodiment, the low energy hydrogen such as atomic, molecular or low-energy low-hydrogen hydride hydrogen energy of low energy hydrogen species H and OH ions by H 2 O and at least one of the catalyst synthesis reaction. SunCell® reactions and energy in one embodiment, such as pellets or wire comprising the present invention to form a low ignition energy of hydrogen in the reaction product of at least one of the following comprises at least one of the malocclusion, such as H 2 (1/p) Low-energy hydrogen compounds or species of low-energy hydrogen species: (i) elements other than hydrogen; (ii) such as H + , ordinary H 2 , ordinary H − and ordinary H − .
Figure 02_image694
at least one of ordinary hydrogen species, such as organic ions or organic molecular species; and (iv) inorganic species such as inorganic ions or inorganic compounds. Low energy hydrogen compounds may comprise oxyanion compounds such as alkali or alkaline earth carbonates or hydroxides, oxygen (hydroxides) such as GaOOH, AlOOH and FeOOH or other such compounds of the invention. In one embodiment, the product comprises
Figure 02_image696
and
Figure 02_image698
(M=alkali metal or other cations of the present invention) at least one of the complexes. Products can be identified by ToF-SIMS or electrospray time-of-flight secondary ion mass spectrometry (ESI-ToF) as containing, respectively
Figure 02_image700
and
Figure 02_image702
A series of ions in the positive spectrum of , where n is an integer and integers and integers p>1 can be substituted for 4. In one embodiment, a compound comprising silicon and oxygen such as SiO 2 or of quartz may act as H 2 (1/4) of the getter. H 2 (1/4) of the getter can comprise a transition metal, alkali metals, alkaline earth metals, the transition metals, rare earth metals, combinations of metals, such as Mo alloy such as alloy MoCu, and the hydrogen storage material of the present invention, such as Material.

包含藉由本發明之方法合成之低能量氫物種的化合物可具有式MH、MH2 或M2 H2 ,其中M為鹼陽離子,且H為低能量氫物種。化合物可具有式MHn ,其中n為1或2,M為鹼土陽離子,且H為低能量氫物種。化合物可具有式MHX,其中M為鹼陽離子,X為諸如鹵素原子之中性原子、分子或諸如鹵素陰離子的單帶負電陰離子中之一者,且H為低能量氫物種。化合物可具有式MHX,其中M為鹼土陽離子,X為單帶負電陰離子,且H為低能量氫物種。化合物可具有式MHX,其中M為鹼土陽離子,X為雙帶負電陰離子,且H為低能量氫物種。化合物可具有式M2 HX,其中M為鹼陽離子,X為單帶負電陰離子,且H為低能量氫物種。化合物可具有式MHn ,其中n為整數,M為鹼性陽離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式M2 Hn ,其中n為整數,M為鹼土陽離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式M2 XHn ,其中n為整數,M為鹼土陽離子,X為單帶負電陰離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式M2 X2 Hn ,其中n為1或2,M為鹼土陽離子,X為單帶負電陰離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式M2 X3 H,其中M為鹼土陽離子,X為單帶負電陰離子,且H為低能量氫物種。化合物可具有式M2 XHn ,其中n為1或2,M為鹼土陽離子,X為雙帶負電陰離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式M2 XX'H,其中M為鹼土陽離子,X為單帶負電陰離子,X'為雙帶負電陰離子,且H為低能量氫物種。化合物可具有式MM'Hn ,其中n為1至3之整數,M為鹼土陽離子,M'為鹼金屬陽離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式MM'XHn ,其中n為1或2,M為鹼土陽離子,M'為鹼金屬陽離子,X為單帶負電陰離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式MM'XH,其中M為鹼土陽離子,M'為鹼金屬陽離子,X為雙帶負電陰離子,且H為低能量氫物種。化合物可具有式MM'XX'H,其中M為鹼土陽離子,M'為鹼金屬陽離子,X及X'為單帶負電陰離子,且H為低能量氫物種。化合物可具有式MXX'Hn ,其中n為1至5之整數,M為鹼或鹼土陽離子,X為單或雙帶負電陰離子,X'為金屬或類金屬、過渡元素、內過渡元素或稀土元素,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式MHn ,其中n為整數,M為諸如過渡元素、內過渡元素或稀土元素之陽離子,且化合物之氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式MXHn ,其中n為整數,M為諸如鹼陽離子、鹼土陽離子之陽離子,X為諸如過渡元素、內過渡元素或稀土元素陽離子之另一陽離子,且化合物的氫內容物Hn 包含至少一種低能量氫物種。化合物可具有式

Figure 02_image704
,其中M為鹼陽離子或其他+1陽離子,m及n皆為整數,且化合物之氫內容物Hm 包含至少一種低能量氫物種。化合物可具有式
Figure 02_image706
,其中M為鹼陽離子或其他+1陽離子,m及n皆為整數,X為單帶負電陰離子,且化合物之氫內容物Hm 包含至少一種低能量氫物種。化合物可具有式
Figure 02_image708
,其中M為鹼陽離子或其他+1陽離子,n為整數,且化合物之氫內容物H包含至少一種低能量氫物種。化合物可具有式
Figure 02_image710
,其中M為鹼陽離子或其他+1陽離子,n為整數,且化合物之氫內容物H包含至少一種低能量氫物種。包括陰離子或陽離子之化合物可具有式
Figure 02_image712
,其中m及n皆為整數,M及M'皆為鹼或鹼土陽離子,X為單或雙帶負電陰離子,且化合物之氫內容物Hm 包含至少一種低能量氫物種。包括陰離子或陽離子之化合物可具有式
Figure 02_image714
,其中m及n皆為整數,M及M'皆為鹼或鹼土陽離子,X及X'為單或雙帶負電陰離子,且化合物之氫內容物Hm 包含至少一種低能量氫物種。陰離子可包含本發明之陰離子中之一者。適合例示性單帶負電陰離子為鹵離子、氫氧根離子、碳酸氫根離子或硝酸根離子。適合例示性雙帶負電陰離子為碳酸根離子、氧化物或硫酸根離子。Compounds containing low-energy hydrogen species synthesized by the method of the present invention can have the formula MH, MH 2, or M 2 H 2, where M is an alkali cation, and H is a low energy hydrogen species. Compound having the formula MH n, wherein n is 1 or 2, M is an alkaline earth cation, and H is a low energy hydrogen species. The compound may have the formula MHX, wherein M is a base cation, X is one of a neutral atom such as a halogen atom, a molecule, or a single negatively charged anion such as a halogen anion, and H is a low energy hydrogen species. The compound may have the formula MHX, wherein M is an alkaline earth cation, X is a single negatively charged anion, and H is a low energy hydrogen species. The compound may have the formula MHX, wherein M is an alkaline earth cation, X is a double negatively charged anion, and H is a low energy hydrogen species. Compound may have the formula M 2 HX, where M is an alkali cation, X is a single negatively charged anion, and H is a low energy hydrogen species. Compound having the formula MH n, where n is an integer, M being an alkaline cation, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species. Compound may have the formula M 2 H n, where n is an integer, M being an alkaline earth cation, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species. Compound may have the formula M 2 XH n, where n is an integer, M being an alkaline earth cation, X is a single negatively charged anion, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species. Compound may have the formula M 2 X 2 H n, wherein n is 1 or 2, M is an alkaline earth cation, X is a negatively charged anion single band, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species. Compound may have the formula M 2 X 3 H, wherein M is an alkaline earth cation, X is a single negatively charged anion, and H is a low energy hydrogen species. Compound may have the formula M 2 XH n, wherein n is 1 or 2, M is an alkaline earth cation, X is a double negatively charged anion, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species. Compound may have the formula M 2 XX'H, wherein M is an alkaline earth cation, X is a single negatively charged anion, X 'is a double with negatively charged anion, and H is a low energy hydrogen species. Compound having the formula MM'H n, where n is an integer of from 1 to 3, M being an alkaline earth cation, M 'is an alkali metal cation, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species. Compound having the formula MM'XH n, wherein n is 1 or 2, M is an alkaline earth cation, M 'is an alkali metal cation, X is a single negatively charged anion, and the hydrogen content H n of the compound comprises at least one low energy hydrogen species . The compound may have the formula MM'XH, wherein M is an alkaline earth cation, M' is an alkali metal cation, X is a double negatively charged anion, and H is a low energy hydrogen species. The compound may have the formula MM'XX'H, wherein M is an alkaline earth cation, M' is an alkali metal cation, X and X' are singly negatively charged anions, and H is a low energy hydrogen species. Compound having the formula MXX'H n, where n is an integer of 1 to 5, M being an alkali or alkaline earth cation, X is a single or double negatively charged anion, X 'is a metal or metalloid, transition elements, inner transition elements or rare earth element, and the hydrogen content Hn of the compound comprises at least one low-energy hydrogen species. Compound having the formula MH n, where n is an integer, M being a transition element such as, inner transition element or rare earth cation, the hydrogen content H n and the compound comprises at least one low energy hydrogen species. Compound having the formula MXH n, where n is an integer, M being a cation such as an alkali, alkaline-earth cation of the cation, X is a transition element such as, inner transition element or rare earth element other cations of the cation, and the hydrogen content comprises a compound H n At least one low energy hydrogen species. Compounds can have the formula
Figure 02_image704
Wherein M is an alkali cation or other cation + 1, m and n are both integers, and the hydrogen content H m of the compound comprising at least one low energy hydrogen species. Compounds can have the formula
Figure 02_image706
, where M is an alkali cation or other +1 cation, m and n are both integers, X is a single negatively charged anion, and the hydrogen content H m of the compound contains at least one low-energy hydrogen species. Compounds can have the formula
Figure 02_image708
, where M is a base cation or other +1 cation, n is an integer, and the hydrogen content H of the compound comprises at least one low-energy hydrogen species. Compounds can have the formula
Figure 02_image710
, where M is a base cation or other +1 cation, n is an integer, and the hydrogen content H of the compound comprises at least one low-energy hydrogen species. Compounds including anions or cations may have the formula
Figure 02_image712
, wherein m and n are integers, M and M' are alkali or alkaline earth cations, X is a mono- or double negatively charged anion, and the hydrogen content H m of the compound comprises at least one low-energy hydrogen species. Compounds including anions or cations may have the formula
Figure 02_image714
, wherein m and n are integers, M and M' are alkali or alkaline earth cations, X and X' are single or double negatively charged anions, and the hydrogen content H m of the compound includes at least one low-energy hydrogen species. The anion may comprise one of the anions of the present invention. Suitable exemplary single negatively charged anions are halide, hydroxide, bicarbonate or nitrate ions. Suitable exemplary double negatively charged anions are carbonate, oxide or sulfate ions.

本發明之低能量氫化合物較佳地超過0.1原子%純。更佳地,化合物超過1原子%純。甚至更佳地,化合物超過10原子%純。最佳地,化合物超過50原子%純。在另一實施例中,化合物超過90原子%純。在另一實施例中,化合物超過95原子%純。The low energy hydrogen compounds of the present invention are preferably more than 0.1 atomic % pure. More preferably, the compound is more than 1 atomic % pure. Even more preferably, the compound is more than 10 atomic % pure. Optimally, the compound is more than 50 atomic % pure. In another embodiment, the compound is more than 90 atomic % pure. In another embodiment, the compound is more than 95 atomic % pure.

反應產物之屬性 因為低能量氫化合物(或具有如本文中所描述之光譜特徵之反應產物)在諸如高效能液相層析(HPLC)之層析期間與諸如C18管柱之包含有機填充之管柱相互作用,低能量氫化合物(例如,諸如在SunCell®操作期間產生之彼等者)可使用有機溶劑(諸如烴、醇、乙醚二甲基甲醯胺及碳酸鹽中之至少一者)自水性溶液(諸如鹼水溶液,諸如NaOH或KOH水性溶液)萃取。在一實施例中,使用包含有機化合物(諸如具有C18管柱填充之HPLC)之固定相之層析用於分離、純化及識別包含較低能氫之化合物(諸如包含分子低能量氫之化合物)中之至少一者,歸因於包含較低能氫之化合物與固定相之間的相互作用。進一步包含至少一個無機部分之化合物之較低能量氫部分可產生與具有至少一些有機特性之管柱之固定相的相互作用,其中在無較低能量氫部分存在下,相互作用將為可忽略的或不存在的。在一實施例中,包含較低能量氫(諸如分子低能量氫)之化合物可藉由管柱或膜層析自溶液及化合物之混合物中之至少一者純化。溶離劑可包含水及至少一種有機溶劑中之至少一者,諸如乙腈、甲酸、醇、乙醚、DMSO及此項技術中已知之另一種此類溶劑。管柱填充可包含有機型固定相。 The properties of the reaction product are due to the fact that low energy hydrogen compounds (or reaction products with spectral characteristics as described herein) interact during chromatography such as high performance liquid chromatography (HPLC) with tubes containing organic packing such as C18 columns. Column interactions, low energy hydrogen compounds (eg, such as those generated during SunCell® operations) can be released from organic solvents such as at least one of hydrocarbons, alcohols, ether dimethylformamide, and carbonates. Aqueous solution (such as aqueous base, such as NaOH or KOH) extraction. In one embodiment, chromatography using a stationary phase comprising organic compounds such as HPLC with C18 column packing is used for separation, purification and identification of compounds comprising lower energy hydrogens such as compounds comprising molecular low energy hydrogen At least one of these is due to the interaction between the lower energy hydrogen containing compound and the stationary phase. The lower energy hydrogen moiety of the compound further comprising at least one inorganic moiety can produce interactions with the stationary phase of the column having at least some organic properties, wherein in the absence of the lower energy hydrogen moiety the interaction would be negligible or non-existent. In one embodiment, compounds comprising lower energy hydrogen, such as molecular low energy hydrogen, can be purified from at least one of solutions and mixtures of compounds by column or membrane chromatography. The elution solvent may comprise at least one of water and at least one organic solvent, such as acetonitrile, formic acid, alcohol, diethyl ether, DMSO, and another such solvent known in the art. Column packing may contain organic type stationary phases.

約瑟夫森接面,諸如超導量子干擾裝置(SQUID)之約瑟夫森接面連結呈磁通量量子或磁通軌跡

Figure 02_image716
之量化單位的磁通量。藉由低能量氫氫化物離子及分子低能量氫針對磁通量之連結預測及觀測到相同的行為。在自由電子結合至對應原子
Figure 02_image718
期間
Figure 02_image720
之可見發射光譜中觀測到前者。藉由涉及所施加磁場中
Figure 02_image722
之微波照射的電子順磁共振光譜分析觀測到藉由分子低能量氫之磁通量子之連結,其中諧振吸收引起涉及具有經量化磁通量連結之自旋軌道耦合的自旋翻轉躍遷。藉由分子低能量氫連結磁通量子亦藉由拉曼光譜分析觀測到,拉曼光譜分析涉及
Figure 02_image724
之紅外線、可見光或紫外線雷射照射,其中諧振吸收引起涉及與經量化磁通量連結之自旋軌道耦合的旋轉躍遷。藉由拉曼光譜分析進一步觀測到磁通量子藉由分子低能量氫之連結,拉曼光譜分析涉及
Figure 02_image726
之紅外線照射,其中當施加磁場以改變紅外線吸收之選擇規則時,諧振吸收引起涉及與經量化磁通量連結之自旋軌道耦合的旋轉躍遷。藉由諸如
Figure 02_image728
Figure 02_image730
之低能量氫物種進行的磁鏈現象在實現諸如邏輯閘、記憶體元件及其他電子量測或致動器裝置(諸如磁力計、感測器及利用此等低能量氫反應產物之獨特特徵的開關)之低能量氫SQUID及低能量氫SQUID類型電子元件中具有效用。舉例而言,在甚至高溫對比低溫下操作之電腦邏輯閘或記憶體元件可為單一分子低能量氫,諸如
Figure 02_image732
,比分子氫小43 倍或64倍。Josephson junctions, such as those of superconducting quantum interference devices (SQUIDs), are connected as magnetic flux quanta or flux trajectories
Figure 02_image716
The quantified unit of magnetic flux. The same behavior is predicted and observed by the connection of low-energy hydrogen hydride ions and molecular low-energy hydrogen for magnetic flux. Free electrons bind to corresponding atoms
Figure 02_image718
period
Figure 02_image720
The former is observed in the visible emission spectrum. by involving the applied magnetic field
Figure 02_image722
Electron paramagnetic resonance spectroscopy analysis of microwave irradiation observed linkages of magnetic flux quanta by molecular low-energy hydrogen, with resonant absorption causing spin-flip transitions involving spin-orbit coupling with quantified flux linkages. Magnetic flux quanta linked by molecular low-energy hydrogen are also observed by Raman spectroscopy, which involves
Figure 02_image724
Infrared, visible or ultraviolet laser irradiation, where resonant absorption induces rotational transitions involving spin-orbit coupling linked to the quantized magnetic flux. It was further observed that the magnetic flux quanta were linked by molecular low-energy hydrogen by means of Raman spectroscopy, which involved
Figure 02_image726
of infrared radiation, wherein when a magnetic field is applied to change the selection rule for infrared absorption, the resonant absorption induces rotational transitions involving spin-orbit coupling with quantized magnetic flux linkages. by such as
Figure 02_image728
and
Figure 02_image730
The phenomenon of flux linkage by low-energy hydrogen species is useful in realizing applications such as logic gates, memory devices, and other electronic measurement or actuator devices such as magnetometers, sensors, and applications that take advantage of the unique characteristics of these low-energy hydrogen reaction products. Switch) of low-energy hydrogen SQUID and low-energy hydrogen SQUID type electronic components have utility. For example, a computer logic gate or memory device that operates at even high versus low temperature may be a single molecule of low energy hydrogen, such as
Figure 02_image732
, Small molecular hydrogen than 43 times or 64 times.

低能量氫SQUID及低能量氫SQUID類型電子元件可包含以下各者中之至少一者:輸入電流及輸入電壓電路以及輸出電流及輸出電壓電路,以進行以下各者中之至少一者:感測及改變低能量氫氫化物離子及分子低能量氫中之至少一者的磁鏈狀態。該等電路可包含AC諧振電路,諸如射頻RLC電路。低能量氫SQUID及低能量氫SQUID類型電子元件可進一步包含至少一種電磁輻射來源,諸如微波、紅外線、可見光或紫外線輻射中之至少一者的來源。輻射源可包含雷射或微波發生器。雷射輻射可藉由透鏡或光纖以聚焦方式施加。低能量氫SQUID及低能量氫SQUID類型電子元件可進一步包含應用於低能量氫氫化物離子及分子低能量氫中之至少一者的磁場來源。該磁場可為可調諧的。輻射源及磁場中之至少一者之可轉向性可使得能夠選擇性且受控達成電磁輻射來源與磁場之間的共振。Low-energy hydrogen SQUIDs and low-energy hydrogen SQUID-type electronics may include at least one of an input current and input voltage circuit and an output current and output voltage circuit to perform at least one of: sensing and changing the magnetic linkage state of at least one of low energy hydrogen hydride ions and molecular low energy hydrogen. These circuits may include AC resonant circuits, such as radio frequency RLC circuits. The low energy hydrogen SQUID and low energy hydrogen SQUID type electronic components may further comprise at least one source of electromagnetic radiation, such as a source of at least one of microwave, infrared, visible or ultraviolet radiation. The radiation source may comprise a laser or microwave generator. Laser radiation can be applied in a focused manner by means of lenses or optical fibers. Low-energy hydrogen SQUIDs and low-energy hydrogen SQUID-type electronic devices may further include a magnetic field source applied to at least one of low-energy hydrogen hydride ions and molecular low-energy hydrogen. The magnetic field may be tunable. Steerability of at least one of the radiation source and the magnetic field can enable selective and controlled achievement of resonance between the electromagnetic radiation source and the magnetic field.

在一實施例中,固有或外部磁場或磁化可允許分子低能量氫躍遷,其包含待允許之電子自旋翻轉、分子旋轉、自旋旋轉、自旋軌道耦合及磁通量連結躍遷中之至少一者。在表面上包含低能量氫之金屬箔(諸如鐵磁性箔,諸如Ni、Fe或Co箔)可展示在拉曼光譜中之此等分子低能量氫躍遷。在另一實施例中,諸如GaOOH:H2 (1/4)之分子低能量氫化合物可經受磁體之外部所施磁場以允許此等分子低能量氫躍遷,諸如藉由拉曼光譜分析觀測到的躍遷。分子低能量氫躍遷亦可藉由表面增強效應,諸如當分子低能量氫位於導體之表面上時(諸如在金屬表面上,諸如藉由表面增強拉曼(SER)觀測到的金屬表面)出現的表面增強效應來增強。例示性金屬表面為Ni、Cu、Cr、Fe、不鏽鋼、Ag、Au及其他金屬或金屬合金之箔。In one embodiment, an intrinsic or external magnetic field or magnetization may allow molecular low-energy hydrogen transitions that include at least one of electron spin flips, molecular spins, spin spins, spin-orbit coupling, and flux-bonded transitions to be allowed . Metal foils containing low energy hydrogen on the surface, such as ferromagnetic foils, such as Ni, Fe or Co foils, can exhibit these molecular low energy hydrogen transitions in Raman spectroscopy. In another embodiment, such GaOOH: H 2 (1/4) of the low energy molecular hydrogen compound may be subjected to an external magnetic field applied by the magnet to allow for these low energy molecular hydrogen transitions, such as is observed by Raman spectroscopy 's transition. Molecular low-energy hydrogen transitions can also occur through surface-enhanced effects, such as when molecular low-energy hydrogen is located on the surface of a conductor, such as on a metallic surface, such as observed by surface-enhanced Raman (SER). surface enhancement effect. Exemplary metal surfaces are foils of Ni, Cu, Cr, Fe, stainless steel, Ag, Au, and other metals or metal alloys.

在一實施例中,諸如H2 (1/4)之分子低能量氫氣體可溶於諸如稀有氣體之冷凝氣體中,該稀有氣體諸如液態氬、液態氮、液態CO2 或諸如固態CO2 之固態氣體。在低能量氫比氫更可溶之情況下,液體氬可用於自源(諸如包含H2 與分子低能量氫氣體(諸如來自SunCell®之氣體)之混合物的源)選擇性地收集及富集分子低能量氫氣體。在一實施例中,來自SunCell®之氣體鼓泡通過液態氬,該液態氬歸因於分子低能量氫在液態氬中之溶解度而充當吸氣劑。在一實施例中,可藉由添加保留分子低能量氫之另一氣體(諸如氬氣)降低來自密封容器之氣態分子低能量氫的損失率。In one embodiment, such as H 2 (1/4) of the low-energy hydrogen molecules are soluble in the condensable gases such as noble gases, the noble gases, such as liquid argon, liquid nitrogen, liquid CO 2 or CO 2 as the solid solid gas. (Source such as H 2 and comprises a low energy hydrogen molecules (such as a gas from the SunCell®) the mixture) in the case of low energy hydrogen is more soluble than hydrogen, liquid argon from the source can be used to selectively collect and enrich Molecular low energy hydrogen gas. In one embodiment, gas from SunCell® is bubbled through liquid argon, which acts as a getter due to the solubility of molecular low energy hydrogen in liquid argon. In one embodiment, the rate of loss of gaseous molecular low energy hydrogen from the sealed vessel can be reduced by adding another gas that retains the molecular low energy hydrogen, such as argon.

如上文所描述,本發明之發電系統經由與可用於表徵系統之獨特特徵的反應而操作。此等產物可以多種不同方式收集。在一實施例中,溶劑用於低能量氫收集。在一實施例中,溶劑可為磁性的,諸如順磁性,使得分子低能量氫歸因於分子低能量氫之磁性而具有某些吸收相互作用。例示性溶劑為液態氧,氧溶解於諸如水、NO、NO2 、B2 、ClO2 、SO2 、N2 O之另一液體中,其中NO2 、O2 、NO、B2 及ClO2 為順磁性的。替代地,低能量氫氣體可鼓泡通過固體溶劑,諸如固體,該固體在室溫下為氣體,諸如固態CO2 。可直接收集低能量氫氣體。替代地,所得溶液可經過濾、撇渣、傾析或離心以收集包含低能量氫(諸如低能量氫大型聚集體)之非可溶性化合物。As described above, the power generation system of the present invention operates through reactions with unique features that can be used to characterize the system. These products can be collected in a number of different ways. In one embodiment, the solvent is used for low energy hydrogen harvesting. In one embodiment, the solvent may be magnetic, such as paramagnetic, such that the molecular low energy hydrogen has certain absorption interactions due to the magnetic properties of the molecular low energy hydrogen. Exemplary solvents for the liquid oxygen, the oxygen dissolved in 2, B 2, such as water, NO, NO, ClO 2, SO 2, N another liquid 2 O's, in which NO 2, O 2, NO, B 2 and ClO 2 is paramagnetic. Alternatively, the low energy hydrogen can be bubbled through a solid solvent, such as a solid which is a gas at room temperature, such as solid CO 2. Low energy hydrogen gas can be directly collected. Alternatively, the resulting solution can be filtered, skimmed, decanted or centrifuged to collect insoluble compounds comprising low energy hydrogen, such as large aggregates of low energy hydrogen.

固體吸氣劑亦可用於捕集低能量氫氣體,諸如在一個溫度(諸如低溫溫度)下在SunCell®中產生之低能量氫氣體,且在加溫或加熱後在較高溫度下釋放。吸氣劑可包含氧化物或氫氧化物,諸如金屬氧化物、氫氧化物或碳酸鹽。額外例示性吸氣劑為以下中之至少一者:鹼金屬氫氧化物,諸如KOH或鹼土金屬氫氧化物,諸如Ca(OH)2 ;碳酸鹽,諸如K2 CO3 ;吸氣劑,諸如氫氧化物與碳酸鹽,諸如Ca(OH)2 +Li2 CO3 之混合物;鹼性鹵化物,諸如KCl或LiBr;硝酸鹽,諸如NaNO3 ;以及亞硝酸鹽,諸如NaNO2 。諸如FeOOH、Fe(OH)3 及Fe2 O3 之吸氣劑可為順磁性的。在一實施例中,吸氣劑可包含磁性化合物、材料、液體或物種,諸如包含Mn、Cu或Ti之順磁性奈米粒子或諸如鐵磁性金屬奈米粒子,諸如Ni、Fe、Co、CoSm、鋁鎳鈷合金及其他鐵磁性金屬奈米粒子之磁性奈米粒子。磁性化合物、材料、液體或物種可分散於磁體之表面中。可將磁體保持在低溫溫度下。在例示性實施例中,分子低能量氫吸氣劑包含分散於永久磁體(諸如置放於真空管線區段中之CoSm或釹永久磁體)上之鐵、鎳或鈷粉末,其浸沒於諸如液氮之致冷劑中。在一實施例中,將諸如磁性材料(諸如Fe金屬粉末)之吸氣劑置放於反應單元腔室內部中及接近並連接至反應單元腔室中之至少一者。吸氣劑可含於諸如坩堝之容器中。可覆蓋容器以防止熔融金屬接觸吸氣劑。罩蓋可為以下中之至少一者:能夠進行高溫操作、對與熔融金屬形成合金具有抗性及對低能量氫氣體可透。例示性罩蓋為薄多孔碳、BN、二氧化矽、石英或其他陶瓷罩蓋。Solid getters can also be used to capture low energy hydrogen gas, such as the low energy hydrogen gas produced in SunCell® at one temperature, such as cryogenic temperatures, and released at a higher temperature upon warming or heating. The getter may contain oxides or hydroxides, such as metal oxides, hydroxides or carbonates. Additional exemplary getter is of at least one of the following: alkali metal hydroxides, such as KOH, or alkaline earth metal hydroxide, such as Ca (OH) 2; carbonates such as K 2 CO 3; getter, such as hydroxides and carbonates, such as Ca (OH) 2 + Li 2 CO 3 the mixture; alkali halide such as KCl or LiBr; nitrates, such as NaNO 3; and nitrite, such as NaNO 2. Such as FeOOH, Fe (OH) 3 and Fe 2 O 3 of the getter may be paramagnetic. In one embodiment, the getter may comprise a magnetic compound, material, liquid or species, such as paramagnetic nanoparticles comprising Mn, Cu or Ti or such as ferromagnetic metal nanoparticles such as Ni, Fe, Co, CoSm , Magnetic nanoparticles of AlNiCo alloy and other ferromagnetic metal nanoparticles. Magnetic compounds, materials, liquids or species can be dispersed in the surface of the magnet. Magnets can be kept at cryogenic temperatures. In an exemplary embodiment, the molecular low energy hydrogen getter comprises iron, nickel or cobalt powder dispersed on a permanent magnet, such as a CoSm or neodymium permanent magnet placed in a vacuum line section, immersed in a liquid such as in nitrogen refrigerant. In one embodiment, a getter, such as a magnetic material, such as Fe metal powder, is placed in at least one of the interior of the reaction unit chamber and proximate to and connected to the reaction unit chamber. The getter can be contained in a container such as a crucible. The container can be covered to prevent the molten metal from contacting the getter. The cover may be at least one of: capable of high temperature operation, resistant to alloying with molten metal, and permeable to low energy hydrogen gas. Exemplary caps are thin porous carbon, BN, silica, quartz or other ceramic caps.

在一實施例中,分子低能量氫可自諸如SunCell®中使用之物質(諸如吸氣劑)之組合物釋放,吸氣劑包含藉由用諸如CO2 (碳酸)、HNO3 、H2 SO4 、HCl(g)或HF(g)之無水酸處理的低能量氫。酸可在水性阱中中和,且在來自中和之分離鹽及諸如包含CO2 之低溫阱中之至少一者中收集分子低能量氫氣體。酸及鹼中之至少一者可經選擇以形成包含分子低能量氫之所需化合物。在例示性實施例中,包含低能量氫之NaNO3 或KNO3 係藉由在NaOH或KOH水性溶液中溶解自SunCell®收集之氧化鎵或氧(氫氧)化鎵且用HNO3 中和溶液而形成。In one embodiment, the low energy molecular hydrogen species available from the use of such SunCell® (such as a getter) the release composition, comprising by using a getter such as 2 (carbonic acid), HNO 3, H 2 SO CO 4. Low energy hydrogen treated with anhydrous acid of HCl(g) or HF(g). The acid can be neutralized in the aqueous trap and the molecular low energy hydrogen gas collected in at least one of the separated salt from the neutralization and a cryogenic trap such as containing CO 2 . At least one of the acid and the base can be selected to form the desired compound comprising molecular low energy hydrogen. In the exemplary embodiment, it comprises a low energy hydrogen of NaNO 3 or KNO 3 lines by NaOH or KOH in an aqueous solution from dissolving gallium oxide or oxygen SunCell® collected (hydroxide) and gallium with a solution of HNO 3 and formed.

在一實施例中,沒食子酸鉀及沒食子酸鈉中之至少一者用藉由使CO2 鼓泡通過溶液形成之碳酸中和以形成K2 CO3 :H2 (1/4)及Na2 CO3 :H2 (1/4)。藉由鎵-ToF-SIMS對碳酸鉀類似物之例示性分析展示K{K2 CO3 :H2 (1/4)}n ,n=正值光譜中之整數。In one embodiment, the food and not sub potassium sodium gallic used in the at least one formed by making CO 2 was bubbled through the solution to form the carbonate and K 2 CO 3: H 2 ( 1/4 ) and Na 2 CO 3 :H 2 (1/4). With embodiments of the gallium -ToF-SIMS analysis shown potassium carbonate analogs show K {K 2 CO 3: H 2 (1/4)} n, n = integer value of the spectrum.

在一實施例中,包含分子低能量氫(諸如來自Ga2 O3 )之鹼性溶液的強酸中和導致包含分子低能量氫之GaOOH(諸如GaOOH:H2 (1/4))之形成,該分子低能量氫收集用於SunCell®之低能量氫反應運作且溶解於諸如鹼金屬或鹼土金屬氫氧化物(諸如NaOH或KOH)之鹼中。例示性強酸係HCl及HNO3 。用弱酸(諸如碳酸)中和導致形成包含分子低能量氫之GaOOH及包含鎵、氧化物、氫氧化物、碳酸鹽、水及鹼之陽離子中之至少一者的化合物或化合物之混合物(諸如碳酸鉀鎵水合物,諸如K2 Ga2 C2 O8 (H2 O)3 )。In one embodiment, the strong acid comprises an alkaline solution of low energy hydrogen molecules (such as from a Ga 2 O 3) and lead GaOOH of low energy hydrogen molecules to include (such as GaOOH: H 2 (1/4)) of forming, The molecular low energy hydrogen harvesting is used in SunCell®'s low energy hydrogen reaction operation and is dissolved in a base such as an alkali or alkaline earth metal hydroxide such as NaOH or KOH. Exemplary acid-based HCl and HNO 3. Neutralization with a weak acid (such as carbonic acid) results in the formation of a compound or mixture of compounds (such as carbonic acid) that results in the formation of GaOOH comprising molecular low-energy hydrogen and at least one of gallium, oxide, hydroxide, carbonate, water, and a base cation Potassium gallium hydrate, such as K 2 Ga 2 C 2 O 8 (H 2 O) 3 ).

替代地,分子低能量氫可藉由以下各者中之至少一者釋放自包含低能量氫之化合物:高溫之施加,諸如在約100℃至3400℃範圍內;施加電漿;高能量離子或電子轟擊;施加高功率及高能量光中之至少一者,諸如藉由用高功率UV燈或閃光燈照射化合物;及雷射照射,諸如藉由諸如發射325 nm雷射光之UV雷射照射,頻率為氬離子雷射管線(244 nm)或HeCd雷射之兩倍。Alternatively, molecular low energy hydrogen may be released from a compound comprising low energy hydrogen by at least one of: application of high temperature, such as in the range of about 100°C to 3400°C; application of plasma; high energy ions or Electron bombardment; application of at least one of high power and high energy light, such as by irradiating the compound with a high power UV lamp or flash lamp; and laser irradiation, such as by UV laser irradiation such as emitting 325 nm laser light, frequency Twice as argon ion laser line (244 nm) or HeCd laser.

在一實施例中,分子低能量氫氣體可藉由形成包含分子低能量氫之化合物且接著將化合物冷卻至一溫度(釋放溫度)而獲得,在該溫度下分子低能量氫不再可溶或穩定地結合且作為自由分子低能量氫氣體釋放。釋放溫度可為低溫溫度,諸如在約0.1 K至272 K、2 K至75 K及3 K至150 K之至少一個範圍內的低溫溫度。化合物可包含諸如H2 (1/4)之分子低能量氫及氧化物或氧(氫氧)化物,諸如包含Fe、Zn、Ga及Ag中之至少一者的氧化物或氧(氫氧)化物。化合物可藉由在包含水蒸氣之大氣中之對應電線之高電流爆震或藉由根據本發明之包含滯化水的丸粒之爆震來形成。在例示性實施例中,包含分子低能量氫及(i)在水蒸氣存在下由對應的金屬線之高電流爆震形成之Fe及Zn氧化物及氧(氫氧)化物及(ii)由包含水之銀丸粒之空氣爆震形成之氧化銀中之至少一者之至少一種化合物經冷卻至低於液氮溫度以釋放分子低能量氫氣體。In one embodiment, molecular low energy hydrogen gas can be obtained by forming a compound comprising molecular low energy hydrogen and then cooling the compound to a temperature (release temperature) at which molecular low energy hydrogen is no longer soluble or Stably bound and released as free molecular low energy hydrogen gas. The release temperature may be a cryogenic temperature, such as a cryogenic temperature in at least one of a range of about 0.1 K to 272 K, 2 K to 75 K, and 3 K to 150 K. Compound may comprise a low energy hydrogen and oxygen or an oxide (hydroxide) compound such as H 2 (1/4) of the molecule, such as comprising Fe, Zn, Ga, and Ag in the oxide or at least one of oxygen (hydroxyl) matter. Compounds can be formed by high current detonation of corresponding wires in an atmosphere containing water vapour or by detonation of stagnant water-containing pellets according to the invention. In an exemplary embodiment, comprising molecular low energy hydrogen and (i) Fe and Zn oxides and oxygen (hydroxides) formed by high current detonation of the corresponding metal wires in the presence of water vapor and (ii) formed by At least one compound of at least one of the silver oxides formed by air detonation of silver pellets containing water is cooled to below liquid nitrogen temperature to release molecular low energy hydrogen gas.

在一實施例中,捕集於吸氣劑或合金、氧化物或氧(氫氧)化物中、吸收於吸氣劑或合金、氧化物或氧(氫氧)化物上或結合至吸氣劑或合金、氧化物或氧(氫氧)化物之分子低能量氫藉由以下中之至少一種方法形成:(i)金屬線(諸如根據本發明之包含銀、Mo、W、Cu、Ti、Ni、Co、Zr、Hf、Ta及稀土金屬中之至少一者)的電線爆震;(ii)球磨研磨或加熱KOH-KCl混合物,諸如Cu(OH)2 +FeCl3 之其他鹵化物-氫氧化物混合物,諸如AlO(OH)、ScO(OH)、YO(OH)、VO(OH)、CrO(OH)、MnO(OH) (α-MnO(OH)錳榍石及γ-MnO(OH)亞錳酸鹽)、FeO(OH)、CoO(OH)、NiO(OH)、RhO(OH)、GaO(OH)、InO(OH)、Ni1 / 2 Co1 / 2 O(OH)及Ni1 / 3 Co1 / 3 Mn1 / 3 O(OH);以及(iii)根據本發明之SunCell®之操作。在後一情況下,可將添加劑反應物或吸氣劑添加至熔融金屬,諸如鎵。添加劑反應物可形成對應合金、氧化物或氧(氫氧)化物。例示性添加劑或吸氣劑包含Ga2 O3 、鎵-不鏽鋼(SS)、鐵-鎵、鎳鎵及鉻-鎵合金、SS合金氧化物、SS金屬、鎳、鐵及鉻中之至少一者。藉由在諸如低溫溫度之低溫下保持吸氣劑或材料,可將分子低能量氫儲存於其所結合或合併之吸氣劑或材料中。低溫溫度可用諸如液氮或CO2 之致冷劑保持。In one embodiment, trapped in a getter or alloy, oxide or oxygen (hydroxide), absorbed on a getter or alloy, oxide or oxygen (hydroxide) or bonded to a getter Molecular low energy hydrogen or alloys, oxides or oxygen (hydroxides) formed by at least one of the following methods: (i) metal wires (such as according to the present invention comprising silver, Mo, W, Cu, Ti, Ni , at least one of Co, Zr, Hf, Ta, and rare earth metals); (ii) ball milling or heating KOH-KCl mixtures, such as Cu(OH) 2 + FeCl 3 other halides-hydroxide Compound mixtures such as AlO(OH), ScO(OH), YO(OH), VO(OH), CrO(OH), MnO(OH) (α-MnO(OH) manganese titanite and γ-MnO(OH) manganite), FeO(OH), CoO(OH), NiO(OH), RhO(OH), GaO(OH), InO(OH), Ni 1 / 2 Co 1 / 2 O(OH) and Ni 1 / 3 Co 1 / 3 Mn 1 / 3 O(OH); and (iii) operation of SunCell® according to the present invention. In the latter case, an additive reactant or getter can be added to the molten metal, such as gallium. The additive reactants can form corresponding alloys, oxides, or oxygen (hydroxide) compounds. Exemplary additives or getter comprises Ga 2 O 3, gallium - stainless steel (the SS), iron - gallium, nickel, and chromium, gallium - gallium alloy, SS alloy oxide, SS metals, nickel, iron and chromium of at least one of . By maintaining the getter or material at low temperatures, such as cryogenic temperatures, molecular low energy hydrogen can be stored in the getter or material to which it is bound or incorporated. Cryogenic temperatures of liquid nitrogen can be used as the holding or CO 2 refrigerant.

在一實施例中,藉由將化合物溶解於熔融鹽中來將分子低能量氫釋放為來自包含分子低能量氫之氧化物或氧(氫氧)化物化合物的自由氣體,該熔融鹽諸如鹼金屬或鹼土金屬鹵化物或鹽之共熔混合物,諸如以全文引用之方式併入本文中的http :// www . crct . polymtl . ca / fact / documentation / FTsalt / FTsalt _ Figs . htm 中給出之彼等者。具有經溶解氧化物之例示性鹽混合物係MgCl2 - MgO http :// www . crct . polymtl . ca / fact / phase _ diagram . php ? file = MgCl2 - MgO . jpg & dir = FTsaltIn one embodiment, molecular low energy hydrogen is released as a free gas from an oxide or oxygen (hydroxide) compound comprising molecular low energy hydrogen by dissolving the compound in a molten salt such as an alkali metal or a eutectic mixture of salts or alkaline earth metal halides, such as in the incorporated herein incorporated by reference in http:... // www crct polymtl ca / fact / documentation / FTsalt / FTsalt _ Figs given in the htm. theirs. Exemplary salts having a mixture of oxides based lysed MgCl 2 - MgO http:. // www crct polymtl ca / fact / phase _ diagram php file = MgCl2 - MgO jpg & dir = FTsalt...?..

在一實施例中,直接自SunCell®收集之氣態產物或自SunCell®之固體產物釋放之氣態產物收集的氣態產物流過諸如CuO再結合器之再結合器以移除氫氣,且富集的低能量氫氣體在低溫泵之低溫指或冷級上之閥調可密封低溫腔室中或諸如包含藉由液氮冷卻之固體CO2 的低溫阱之低溫阱中冷凝。分子低能量氫氣體可與至少一種其他氣體共冷凝或在可充當溶劑之共冷凝氣體(諸如氬氣、氮氣及氧氣中之一或多者)中吸收。在例示性實施例中,在低能量氫反應運作之後自SunCell®收集之氧化鎵溶解於諸如KOH(水溶液)之鹼水溶液中,且包含低能量氫及氫之釋放氣體流動通過包含藉由液氮冷卻之固體CO2 的低溫阱,其中所收集之低能量氫氣體相對於氫氣富集。當累積足夠液體時,低溫腔室可密封且允許其加溫以使冷凝液體汽化。所得氣體可用於工業或分析目的。舉例而言,氣體可經由腔室閥噴射至氣相層析中或噴射至用於電子束發射光譜分析之電池中。在替代實施例中,分子低能量氫氣體可直接流動至低溫指室中且冷凝,其中低溫指可在高於20.3 K之溫度(H2 在標準大氣壓下之沸點)下操作,使得氫氣不共冷凝。In one embodiment, gaseous product collected directly from SunCell® or gaseous product released from SunCell® solid product is passed through a recombiner, such as a CuO recombiner, to remove hydrogen with low enrichment. the energy of the hydrogen gas in the cryopump cryogenic means or the valving on the cold stage may be sealed, such as low-temperature chamber or a solid containing a liquid nitrogen cooled by the cryogenic trap of CO 2 is condensed in the cryogenic trap. The molecular low energy hydrogen gas can be co-condensed with at least one other gas or absorbed in a co-condensed gas, such as one or more of argon, nitrogen, and oxygen, which can act as a solvent. In an exemplary embodiment, the gallium oxide collected from SunCell® after the low energy hydrogen reaction run is dissolved in an aqueous alkaline solution such as KOH (aqueous), and the released gas comprising the low energy hydrogen and hydrogen flows through the gallium oxide contained by liquid nitrogen the cryogenic trap cooled solid CO 2, wherein the low energy hydrogen gas collected with respect to hydrogen-rich. When enough liquid has accumulated, the cryogenic chamber can be sealed and allowed to warm to vaporize the condensed liquid. The resulting gas can be used for industrial or analytical purposes. For example, the gas can be injected into a gas chromatography via a chamber valve or into a cell for electron beam emission spectrometry. In an alternative embodiment, the low energy molecular hydrogen may flow directly to the low temperature and condensation chamber means, wherein the cryogenic means can be operated at a temperature higher than the 20.3 K (H 2 having a boiling point at normal atmospheric pressure of) the next, so that hydrogen is not co condensation.

在其中分子低能量氫藉由諸如低溫阱或低溫泵之構件低溫冷凝的實施例中,歸因於存在可增加氫沸點之分子低能量氫,氫可在純氫範圍之外的壓力及溫度下在低溫阱或低溫泵中共冷凝。在一實施例中,出於儲存液體氫之目的,分子低能量氫氣體可添加至氫氣以增加其沸點,其中氫儲存所需之能量及設備中之至少一者降低。In embodiments in which molecular low-energy hydrogen is cryogenically condensed by means such as a cryo-trap or cryopump, hydrogen may be at pressures and temperatures outside the pure hydrogen range due to the presence of molecular low-energy hydrogen that can increase the boiling point of hydrogen Co-condenses in a cryogenic trap or cryopump. In one embodiment, for the purpose of storing liquid hydrogen, molecular low energy hydrogen gas can be added to the hydrogen gas to increase its boiling point, wherein at least one of the energy and equipment required for hydrogen storage is reduced.

在一實施例中,低能量氫反應混合物進一步包含分子低能量氫吸氣劑,諸如金屬、元素及化合物(諸如無機化合物,諸如金屬氧化物)中之至少一者。分子低能量氫吸氣劑可與反應單元腔室及儲集器之熔融金屬混合以充當用於形成於反應單元腔室中之分子低能量氫的收集器、黏合劑、吸收器或吸氣劑。分子低能量氫可用於結合或聚集所添加之金屬或化合物以形成粒子。分子低能量氫可與由熔融金屬觸點(諸如其不鏽鋼元素或氧化物)之材料形成的合金或金屬氧化物之金屬起相同作用。粒子可自熔融金屬隔離。粒子可藉由熔融包含粒子之熔融金屬且允許粒子分離來分離。粒子可在分離期間漂浮至混合物之頂部且自熔融金屬表面滑出。替代地,更緻密粒子可下沉,且可傾析熔融金屬以富集混合物之含分子氫化物之粒子內容物。粒子可藉由此項技術中已知之方法進一步純化,諸如將不合需要之組分溶解於適合溶劑中且使所需粒子沈澱。粒子純化亦可藉由自適合溶液再結晶來達成。分子低能量氫氣體可藉由加熱、低溫冷卻、酸溶解、熔融鹽溶解及本發明之其他方法來釋放。In one embodiment, the low energy hydrogen reaction mixture further comprises a molecular low energy hydrogen getter, such as at least one of metals, elements and compounds such as inorganic compounds such as metal oxides. The molecular low energy hydrogen getter can be mixed with the molten metal of the reaction unit chamber and reservoir to act as a collector, binder, absorber or getter for the molecular low energy hydrogen formed in the reaction unit chamber . Molecular low energy hydrogen can be used to bind or aggregate added metals or compounds to form particles. Molecular low-energy hydrogen can function in the same way as metals of alloys or metal oxides formed from materials of molten metal contacts such as their stainless steel elements or oxides. The particles can be isolated from the molten metal. The particles can be separated by melting the molten metal containing the particles and allowing the particles to separate. Particles can float to the top of the mixture and slide off the molten metal surface during separation. Alternatively, the denser particles can sink, and the molten metal can be decanted to enrich the molecular hydride-containing particle content of the mixture. The particles can be further purified by methods known in the art, such as dissolving undesired components in a suitable solvent and precipitating the desired particles. Particle purification can also be achieved by recrystallization from a suitable solution. Molecular low energy hydrogen gas can be released by heating, cryogenic cooling, acid dissolution, molten salt dissolution and other methods of the present invention.

在一實施例中,包含分子低能量氫之粒子的累積藉由諸如產物抑制之手段來抑制低能量氫反應。可藉由諸如機械手段之手段移除粒子以降低反應速率抑制。In one embodiment, the accumulation of particles comprising molecular low energy hydrogen suppresses the low energy hydrogen reaction by means such as product suppression. The particles can be removed by means such as mechanical means to reduce reaction rate inhibition.

如上文所描述,本發明之發電系統經由與可用於表徵系統之獨特特徵的反應而操作。此等產物可以多種不同方式收集,諸如藉由使用低溫泵或低溫阱。分餾液氣體低溫蒸餾管柱就與冷凝表面積及微分分離數目相關之板進行評級。低能量氫之冷凝視壓力、溫度、停留時間、流動速率及冷凝表面積而定。在一實施例中,控制此等參數以使具有所要純度之低能量氫氣體的收集達最佳。在另一實施例中,低溫泵或低溫阱可包含至少一種表面積增強劑以改良低能量氫氣體冷凝及分離,諸如以下各者中之至少一者:諸如突起之結構及具有較大表面積之微粒材料,諸如玻璃或陶瓷珠粒(沙石)、粉末(諸如包含無機化合物或金屬之粉末)及網狀物(諸如金屬布、織物或海綿)。表面積增強劑可位於低溫泵或低溫阱(諸如低溫泵管)之冷卻收集腔或管內部。可選擇表面積增強劑以避免阻擋至少部分包含分子低能量氫之氣體流動通過低溫泵或低溫阱。在例示性實施例中,低溫泵或低溫阱收集容器或管包含層析管柱之區段,諸如裝填有沸石或類似氣體可滲透基質之不鏽鋼管柱,該基質具有較大表面積以冷凝分子低能量氫。As described above, the power generation system of the present invention operates through reactions with unique features that can be used to characterize the system. These products can be collected in a number of different ways, such as by using cryopumps or cryogenic traps. Fractionate gas cryogenic distillation columns are rated for plates in relation to condensation surface area and number of differential separations. The condensation of low energy hydrogen depends on pressure, temperature, residence time, flow rate and condensation surface area. In one embodiment, these parameters are controlled to optimize the collection of low energy hydrogen gas of the desired purity. In another embodiment, the cryopump or cryotrap may include at least one surface area enhancer to improve low energy hydrogen gas condensation and separation, such as at least one of: structures such as protrusions and particles with larger surface areas Materials such as glass or ceramic beads (sand), powders such as those containing inorganic compounds or metals, and meshes such as metal cloth, fabric or sponge. The surface area enhancer can be located inside a cooled collection chamber or tube of a cryopump or cryotrap, such as a cryopump tube. The surface area enhancer may be selected to avoid blocking the flow of at least a portion of the gas containing molecular low energy hydrogen through the cryopump or cryotrap. In an exemplary embodiment, the cryopump or cryotrap collection vessel or tube comprises a section of a chromatography column, such as a stainless steel column packed with a zeolite or similar gas permeable matrix having a large surface area to condense low molecular weight energy hydrogen.

在圖32中所展示之實施例中,形成包含較低能量氫物種之大型聚集體或聚合物的系統500包含諸如塑膠玻璃腔室之腔室507、金屬導線506、具有可藉由高電壓DC電源供應器503充電的接地連接504之高電壓電容器505及諸如12 V電開關502及觸發電花隙開關501之開關,該開關將電路自電容器閉合至腔室507之內部的金屬導線506,以使得電線爆震。腔室可包含水蒸氣及諸如大氣空氣或惰性氣體之氣體。In the embodiment shown in Figure 32, a system 500 for forming large aggregates or polymers comprising lower energy hydrogen species includes a chamber 507 such as a Plexiglas chamber, metal wires 506, The high voltage capacitor 505 of the ground connection 504 charged by the power supply 503 and switches such as the 12 V electrical switch 502 and the trigger gap switch 501 which closes the circuit from the capacitor to the metal leads 506 inside the chamber 507 to Makes the wire knock. The chamber may contain water vapor and gases such as atmospheric air or inert gases.

形成包含較低能量氫物種之大型聚集體或聚合物的例示性系統包含:具有46 cm之長度及12.7 cm之寬度及高度的閉合矩形長方體塑膠玻璃腔室;10.2 cm長、0.22~0.5 mm直徑金屬導線,其使用Mo螺母以距腔室底層9 cm之距離安裝在兩個Mo極點之間;15 kV電容器(Westinghouse模型5PH349001AAA,55 uF),其對應於557 J充電至約4.5 kV;充電電容器的35 kV DC電源供應器;以及12 V開關及觸發電花隙開關(Information Unlimited,模型Trigatron10,3 kJ),其將電路自電容器閉合至腔室之內部的金屬導線,以使得電線爆震。電線可包含Mo (鉬金屬網,來自0.305 mm直徑電線之20目,99.95%,Alpha Aesar)、Zn (0.25 mm直徑,99.993%,Alpha Aesar)、Fe-Cr-Al合金(73%-22%-4.8%,31標準尺寸,0.226 mm直徑,KD Cr-Al-Fe合金電線部件第#1231201848號,Hyndman Industrial Products公司)或Ti(0.25 mm直徑,99.99%,Alpha Aesar)電線。在例示性延伸中,腔室含有空氣,空氣包含約20托水蒸氣。高電壓DC電源供應器在閉合觸發器開關之前關閉。約4.5 kV之峰值電壓在5 kA之峰值電流下以高於約300 us之阻尼諧波振盪器放電。包含較低能量氫物種之大型聚集體或聚合物在電線爆震之後約3-10分鐘內形成。自腔室底層及壁以及在置放在腔室中之Si晶圓上收集分析樣本。分析結果匹配本發明之低能量氫特徵。An exemplary system for forming large aggregates or polymers containing lower energy hydrogen species includes: a closed rectangular cuboid Plexiglas chamber having a length of 46 cm and a width and height of 12.7 cm; 10.2 cm long and 0.22-0.5 mm in diameter Metal wire mounted between two Mo poles using Mo nut at a distance of 9 cm from the bottom of the chamber; 15 kV capacitor (Westinghouse model 5PH349001AAA, 55 uF), which corresponds to 557 J charged to about 4.5 kV; charged capacitor The 35 kV DC power supply of the ; and a 12 V switch and a trigger gap switch (Information Unlimited, model Trigatron 10, 3 kJ), which closes the circuit from the capacitor to the metal wire inside the chamber to detonate the wire. Wire may contain Mo (molybdenum metal mesh, 20 mesh from 0.305 mm diameter wire, 99.95%, Alpha Aesar), Zn (0.25 mm diameter, 99.993%, Alpha Aesar), Fe-Cr-Al alloy (73%-22% -4.8%, 31 gauge, 0.226 mm diameter, KD Cr-Al-Fe alloy wire assembly No. #1231201848, Hyndman Industrial Products) or Ti (0.25 mm diameter, 99.99%, Alpha Aesar) wire. In an exemplary extension, the chamber contains air containing about 20 Torr of water vapor. The high voltage DC power supply is turned off before closing the trigger switch. A peak voltage of about 4.5 kV is discharged with a damped harmonic oscillator above about 300 us at a peak current of 5 kA. Large aggregates or polymers containing lower energy hydrogen species form within about 3-10 minutes after wire detonation. Analytical samples were collected from the chamber floor and walls and on Si wafers placed in the chamber. The analysis results match the low energy hydrogen characteristics of the present invention.

在一實施例中,諸如H2 (1/4)之低能量氫氣體可藉由結晶蒸餾自SunCell®富集。替代地,低能量氫氣體可為藉由在諸如氬氣之稀有氣體中保持諸如H2 O之包含H2 O的電漿而原位形成之中之至少一者。電漿可處於約0.1毫托至1000托之壓力範圍。H2 O電漿可包含另一氣體,諸如稀有氣體,諸如氬氣。在例示性實施例中,包含1托H2 O蒸氣之大氣壓氬電漿係藉由電漿源(諸如本發明之電漿源,諸如電子束、輝光、RF或微波放電源)保持。In one embodiment, such as H 2 (1/4) of the low-energy hydrogen can be crystallized by distillation from SunCell® enrichment. Alternatively, the low energy hydrogen such as H 2 O it may comprise a H 2 O plasma is maintained by a rare gas such as argon rather formed in situ is at least one. The plasma can be at a pressure ranging from about 0.1 mTorr to 1000 Torr. H 2 O plasma may contain another gas, such as rare gas, such as argon. In the exemplary embodiment, comprises 1 Torr H 2 O vapor atmosphere of the system by an argon plasma plasma source (such as plasma source of the present invention, such as electron beam, glow, the RF discharge or microwave power) remains.

在一實施例中,諸如分子低能量氫之低能量氫物種為以下各者中之至少一者:懸浮及溶解於諸如水之液體或溶劑中,使得低能量氫物種在液體或溶劑中之存在改變液體或溶劑之至少一種物理性質,諸如表面張力、沸點、凝固點、黏度、諸如紅外線光譜之光譜及蒸發速率中之至少一者。在例示性實施例中,包含包含白色聚合化合物之較低能量氫之低能量氫反應產物的反應產物藉由以下形成:使Ga2 O3 及自SunCell®中之低能量氫反應運作收集之鎵-不鏽鋼金屬(約0.1至5%)合金溶解於水性KOH中,從而允許纖維生長,且漂浮至藉由過濾收集其之表面,增加水蒸發且改變其FTIR光譜。在一實施例中,分子低能量氫氣體鼓泡通過水且經吸收以改變表面張力,從而准許在含有水之兩個燒杯之間形成水橋。In one embodiment, the low energy hydrogen species such as molecular low energy hydrogen is at least one of: suspended and dissolved in a liquid or solvent such as water such that the low energy hydrogen species is present in the liquid or solvent At least one physical property of the liquid or solvent is altered, such as at least one of surface tension, boiling point, freezing point, viscosity, spectrum such as infrared spectroscopy, and evaporation rate. The reaction product exemplary embodiment, the low energy hydrogen as a white reaction product of the polymerization of a lower energy hydrogen compounds contained by comprising the following form: Ga 2 O 3 and that the gallium from the low energy hydrogen SunCell® reactor operating collected - The stainless steel metal (about 0.1 to 5%) alloy dissolves in aqueous KOH, allowing fibers to grow and float to the surface where they are collected by filtration, increasing water evaporation and changing its FTIR spectrum. In one embodiment, molecular low energy hydrogen gas is bubbled through the water and absorbed to change the surface tension, allowing a water bridge to form between the two beakers containing the water.

在其中分子低能量氫藉由諸如低溫阱或低溫泵之構件低溫冷凝的實施例中,歸因於存在可增加氫沸點之分子低能量氫,氫可在純氫範圍之外的壓力及溫度下在低溫阱或低溫泵中共冷凝。在一實施例中,出於儲存液體氫之目的,分子低能量氫氣體可添加至氫氣以增加其沸點,其中氫儲存所需之能量及設備中之至少一者降低。In embodiments in which molecular low-energy hydrogen is cryogenically condensed by means such as a cryo-trap or cryopump, hydrogen may be at pressures and temperatures outside the pure hydrogen range due to the presence of molecular low-energy hydrogen that can increase the boiling point of hydrogen Co-condenses in a cryogenic trap or cryopump. In one embodiment, for the purpose of storing liquid hydrogen, molecular low energy hydrogen gas can be added to the hydrogen gas to increase its boiling point, wherein at least one of the energy and equipment required for hydrogen storage is reduced.

在實施例中,低能量氫分子氣體雷射包含分子低能量氫氣體(H2 (1/p) p=2、3、4、5、……、137)或分子低能量氫氣體來源(諸如SunCell®)、含有分子低能量氫氣體之雷射空腔、分子低能量氫氣體之旋轉能階之激發來源及雷射光學件。雷射光學件可包含在空腔之末端處的反射鏡,該空腔包含處於激發旋轉狀態的分子低能量氫氣體。反射鏡中之一者可為半透明的以准許雷射光自腔發射。至少一個H2 (1/p)旋轉能階之源激發可包含以下中之至少一者:雷射、閃光燈、氣體放電系統,諸如輝光、微波、射頻(RF)、感應耦合RF、電容耦合RF或此項技術中已知之其他電漿放電系統。由源激發的至少一個旋轉能階可為由GUTCP之等式(22-49)給出的能階的組合且具有如實例10中所說明之例示性能量。低能量氫分子雷射可進一步包含外部或內部場源(諸如電場或磁場源)以使得至少一個所要分子低能量氫旋轉能階被填充,其中能階可包含所要自旋軌道及磁通鏈能量位移中之至少一者。雷射躍遷可發生在所選旋轉狀態之反轉居量與較少填充之較低能量的居量之間。雷射空腔、光學件、激發源及外部場源經選擇以達成所要經反轉居量及對所要較少填充之較低能量狀態的受激發射。In an embodiment, the low energy hydrogen molecular gas laser comprises molecular low energy hydrogen gas (H 2 (1/p) p=2, 3, 4, 5, ..., 137) or a source of molecular low energy hydrogen gas (such as SunCell®), laser cavity containing molecular low-energy hydrogen gas, excitation source of rotational energy level of molecular low-energy hydrogen gas, and laser optics. The laser optics may include mirrors at the ends of the cavity containing the molecular low energy hydrogen gas in an excited rotational state. One of the mirrors may be translucent to allow laser light to be emitted from the cavity. At least one of H 2 (1 / p) energy level of rotational excitation source may comprise the at least one of the following: laser, flash lamp, gas discharge system, glow, microwave, radio frequency (RF), inductively coupled RF, such as a capacitively coupled RF or other plasma discharge systems known in the art. The at least one rotational energy level excited by the source may be a combination of energy levels given by equations (22-49) for GUTCP and have an exemplary energy as illustrated in Example 10. The low-energy molecular hydrogen laser may further comprise an external or internal field source (such as an electric or magnetic field source) such that at least one desired molecular low-energy hydrogen rotational energy level is filled, wherein the energy levels may comprise desired spin-orbit and flux linkage energies at least one of the displacements. Laser transitions can occur between an inversion population of the selected spin state and a less populated lower energy population. The laser cavity, optics, excitation source, and external field source are selected to achieve the desired inverted population and stimulated emission of the desired less populated lower energy state.

分子低能量氫雷射可包含固態雷射。雷射可包含固體雷射介質,諸如包含捕集於固體基質中之分子低能量氫的介質,其中低能量氫分子可為游離轉子。固體培養基可替換分子低能量氫氣體雷射之氣體空腔。雷射可包含在固體雷射介質之末端處的雷射光學件,諸如用以支援來自雷射介質之雷射光發射的反射鏡及窗。固體雷射介質可對藉由與包含固體培養基之雷射空腔諧振的反轉分子低能量氫居量之雷射躍遷產生的雷射光至少部分透明。例示性固態雷射介質為GaOOH:H2 (1/4)、KCl:H2 (1/4),及具有諸如Si(晶體):H2 (1/4)之捕集分子低能量矽之矽。在每一情況下,雷射波長經選擇以藉由固體雷射介質傳輸。Molecular low energy hydrogen lasers may include solid state lasers. The laser may comprise a solid laser medium, such as a medium comprising molecular low energy hydrogen trapped in a solid matrix, where the low energy hydrogen molecules may be free rotors. The solid medium can replace the gas cavity of the molecular low energy hydrogen gas laser. The laser may include laser optics at the end of the solid laser medium, such as mirrors and windows to support the emission of laser light from the laser medium. The solid laser medium may be at least partially transparent to laser light generated by laser transitions of inverse molecular low energy hydrogen populations resonating with a laser cavity comprising the solid medium. Exemplary solid-state laser medium GaOOH: H 2 (1/4), KCl: H 2 (1/4), and has advantages such as Si (crystalline): H 2 (1/4) of the catcher molecules of low energy silicon silicon. In each case, the laser wavelength is selected for transmission through the solid-state laser medium.

在包含在至少一個頻帶中傳輸及接收電磁信號的複數個SunCell-傳輸器-接收器節點之SunCell網狀網路之實施例中,歸因於在本端以短分隔距離定位節點之能力,頻帶之頻率可為高頻。隨著節點之數目增加,間隔節點間距可減小,從而允許相比於使用於蜂巢式電話或無線網際網路傳輸及接收中之彼等頻率信號,歸因於節點相較於後續天線之間隔的較短間隔而偶然使用較高頻率信號,其中較高頻率微波信號具有較短範圍。頻率可在約0.1 GHz至500 GHz、1 GHz至250 GHz、1 GHz至100 GHz、1 GHz至50 GHz及1 GHz至25 GHz之至少一個範圍內。In an embodiment of a SunCell mesh network comprising a plurality of SunCell-transmitter-receiver nodes transmitting and receiving electromagnetic signals in at least one frequency band, due to the ability to locate nodes locally at short separation distances, the frequency band The frequency can be high frequency. As the number of nodes increases, the spacing between nodes can be reduced, allowing signals at frequencies compared to those used in cellular telephone or wireless Internet transmission and reception due to the spacing of nodes compared to subsequent antennas and occasionally use higher frequency signals, where higher frequency microwave signals have shorter ranges. The frequency may be in a range of at least one of about 0.1 GHz to 500 GHz, 1 GHz to 250 GHz, 1 GHz to 100 GHz, 1 GHz to 50 GHz, and 1 GHz to 25 GHz.

實驗 實例 1 SunCell ® 操作 製造圖23中所示之SunCell®且用二氧化矽-氧化鋁纖維絕緣件良好絕緣,2500 sccm H2 及250 sccm O2 氣體流過Pt/Al2 O3 珠粒。將SunCell®加熱至900℃至1400℃範圍內之溫度。在持續保持H2 及O2 流及EM泵抽情況下,電漿形成反應在不存在點火功率之情況下自持續,如藉由在輸入點火功率不存在情況下溫度隨時間之增大所證實。 Experimental Example 1: SunCell® shown in the FIG. 23 was produced in SunCell ® and treated silicon dioxide - alumina fiber insulation good insulation, 2500 sccm H 2 and 250 sccm O 2 gas flow through the Pt / Al 2 O 3 beads . Heat the SunCell® to a temperature in the range of 900°C to 1400°C. And continued to maintain the H 2 O 2 and flow pumping EM case, plasma is formed in the reaction is the absence of the self-sustaining ignition power, such as by the increase over time in the input power ignition temperature confirmed the absence of .

實例 2 SunCell ® 操作 製造且操作具有兩個交叉EM泵噴射器之石英SunCell®(諸如圖10中所示之SunCell®)以產生可持續電漿形成反應。各自包含包含例示性Fe基非晶形芯之感應型電磁泵的兩個熔融金屬噴射器泵抽鎵合金流,使得其相交以產生連結1000 Hz變壓器初級繞組之三角形電流迴路。電流迴路包含在儲集器之基底處的流、兩個鎵合金儲集器及交叉通道。迴路充當至1000 Hz變壓器初級繞組之短路次級繞組。次級繞組中之感應電流以低功率消耗保持大氣空氣中之電漿。具體言之,(i)點火變壓器之初級迴路在1000 Hz下操作,(ii)輸入電壓為100 V至150 V,且(iii)輸入電流為25 A。EM泵電流變壓器之60 Hz電壓及電流分別為300 V及6.6 A。每一EM泵之電磁體在60 Hz下經由串聯之299 µF電容器供電為15至20 A,以使所得磁場之相位與EM泵電流變壓器之勞侖茲交叉電流匹配。變壓器係藉由1000 Hz AC電源供應器供電。 Example 2: SunCell ® operation and the operation for producing a quartz SunCell® two intersecting EM pumps of the ejector (SunCell® as shown in the FIG. 10) to produce a sustainable plasma forming reaction. Two molten metal injectors, each comprising an induction-type electromagnetic pump containing an exemplary Fe-based amorphous core, pump the gallium alloy streams such that they intersect to create a triangular current loop connecting the primary windings of the 1000 Hz transformer. The current loop includes flow at the base of the reservoir, two gallium alloy reservoirs, and a crossover channel. The loop acts as a short-circuited secondary winding to the 1000 Hz transformer primary winding. The induced current in the secondary winding maintains the plasma in the atmospheric air with low power consumption. Specifically, (i) the primary loop of the ignition transformer was operated at 1000 Hz, (ii) the input voltage was 100 V to 150 V, and (iii) the input current was 25 A. The 60 Hz voltage and current of the EM pump current transformer were 300 V and 6.6 A, respectively. The electromagnets of each EM pump were powered at 15 to 20 A at 60 Hz via a 299 μF capacitor in series to match the phase of the resulting magnetic field with the Lorentz crossover current of the EM pump current transformer. The transformer is powered by a 1000 Hz AC power supply.

實例 3 SunCell ® 操作 製造具有其間具有連接跨接電纜414a之一個EM泵噴射器電極及底座相對電極之Pyrex SunCell®,類似於圖27中所展示之SunCell®。包含DC型電磁泵之熔融金屬噴射器泵抽與底座相對電極連接之鎵合金流,以閉合包含流、EM泵儲集器及在每一端連接至對應電極匯流條且穿過60 Hz變壓器初級繞組之跨接電纜的電流迴路。迴路充當至60 Hz變壓器初級繞組之短路次級繞組。次級繞組中之感應電流以低功率消耗保持大氣空氣中之電漿。感應點火系統實現了本發明之基於銀或鎵之熔融金屬SunCell®發電機,其中反應物經供應至根據本發明之反應單元腔室。具體言之,(i)點火變壓器之初級迴路在60 Hz下操作,(ii)輸入電壓為300 V峰值,且(iii)輸入電流為29 A峰值。最大感應電漿點火電流為1.38 kA。 Example 3: SunCell ® operating SunCell® manufacturing a jumper cable connected therebetween having a pump sprayer EM electrode 414a and the base electrodes of opposing Pyrex SunCell®, similar to the shown in FIG. 27. A molten metal injector comprising a DC type electromagnetic pump pumps a flow of gallium alloy connected to the opposite electrode of the base to close the contained flow, the EM pump reservoir and at each end connected to the corresponding electrode bus bar and through the 60 Hz transformer primary winding The current loop of the jumper cable. The loop acts as a short circuited secondary winding to the primary winding of the 60 Hz transformer. The induced current in the secondary winding maintains the plasma in the atmospheric air with low power consumption. The induction ignition system implements the silver or gallium based molten metal SunCell® generator of the present invention, wherein the reactants are supplied to the reaction cell chamber according to the present invention. Specifically, (i) the primary loop of the ignition transformer was operated at 60 Hz, (ii) the input voltage was 300 V peak, and (iii) the input current was 29 A peak. The maximum induced plasma ignition current is 1.38 kA.

實例 4 SunCell ® 操作 在4 ml/min H2 O噴射下將反應單元腔室保持在約1至2 atm之壓力範圍下。DC電壓為約30 V且DC電流為約1.5 kA。反應單元腔室為6吋直徑之不鏽鋼球體,諸如圖23中所示之含有3.6 kg熔融鎵的不鏽鋼球體。電極包含DC EM泵之1吋浸沒式SS噴嘴及包含4 cm直徑、1 cm厚W圓盤之相對電極,該圓盤具有由BN底座覆蓋之1 cm直徑引線。EM泵速率為約30至40 ml/s。鎵藉由浸沒噴嘴極化為正,且W底座電極極化為負。鎵藉由EM泵噴射器充分混合。SunCell®輸出功率為約85 kW,使用鎵及SS反應器之質量、比熱及溫度升高之乘積量測。 Example 4: SunCell ® operating at 4 ml / min H 2 O and the reaction unit injector chamber pressure is maintained at about the range of 1 to 2 atm. The DC voltage is about 30 V and the DC current is about 1.5 kA. The reaction cell chamber is a 6 inch diameter stainless steel sphere, such as the stainless steel sphere shown in Figure 23 containing 3.6 kg of molten gallium. The electrodes consisted of a 1 inch submerged SS nozzle of a DC EM pump and an opposing electrode consisting of a 4 cm diameter, 1 cm thick W disk with a 1 cm diameter lead covered by a BN base. The EM pump rate was about 30 to 40 ml/s. Gallium is polarized positively by the immersion nozzle, and the W base electrode is polarized negatively. Gallium is thoroughly mixed by means of an EM pump injector. The SunCell® output is approximately 85 kW, measured using the product of the mass, specific heat and temperature rise of the gallium and SS reactors.

實例 5 SunCell ® 操作 使2500 sccm H2 及25 sccm O2 流動通過約2 g之10% Pt/Al2 O3 珠粒,保持在外部腔室中,與H2 及O2 氣體入口及反應單元腔室一致。另外,使氬氣以保持50托燃燒室壓力之速率流動至反應單元腔室中,同時施加主動真空泵抽。DC點火電壓為約20 V且DC電流為約1.25 kA。SunCell®輸出功率為約120 kW,使用鎵及SS反應器之質量、比熱及溫度升高之乘積量測。 Example 5: SunCell ® makes 2500 sccm H 2 and 25 sccm O 2 flow by about 2 g of 10% Pt / Al 2 O 3 beads held in the outer chamber, and the H 2 O 2 and the reaction gas inlet Unit chambers are consistent. Additionally, argon was flowed into the reaction cell chamber at a rate that maintained a combustion chamber pressure of 50 Torr while active vacuum pumping was applied. The DC ignition voltage was about 20 V and the DC current was about 1.25 kA. The SunCell® output is approximately 120 kW, measured using the product of the mass, specific heat and temperature rise of the gallium and SS reactors.

實例 6 SunCell ® 操作 使用類似於圖24中所說明之發電系統的輝光放電氫解離劑及再結合器,SunCell包含具有沿反應單元腔室壁之Mo襯墊的8吋直徑4130 Cr-Mo SS電池。輝光放電藉由Conflat凸緣之0.75吋OD集直接連接反應單元腔室之凸緣409a,輝光放電電壓為260 V;輝光放電電流為2 A;氫流動速率為2000 sccm;氧流動速率為1 sccm;操作壓力為5.9托;鎵溫度藉由水浴冷卻保持在400℃下;點火電流及電壓為1300 A及26至27 V;EM泵速率為100 g/s,且輸出功率對於29 kW之輸入點火功率超過300 kW,對應於至少10倍之增益。 Example 6: SunCell ® operating a power generation system using glow illustration similar to FIG. 24 discharge hydrogen dissociation agent and recombination device, SunCell comprising Mo pad along the reaction chamber wall means of 8-inch diameter of 4130 Cr-Mo SS Battery. The glow discharge was directly connected to the flange 409a of the reaction cell chamber through the 0.75 inch OD set of the Conflat flange, the glow discharge voltage was 260 V; the glow discharge current was 2 A; the hydrogen flow rate was 2000 sccm; the oxygen flow rate was 1 sccm ; operating pressure 5.9 torr; gallium temperature maintained at 400°C by water bath cooling; ignition current and voltage 1300 A and 26 to 27 V; EM pump rate 100 g/s and output power for 29 kW input ignition Powers exceeding 300 kW correspond to a gain of at least 10 times.

實例 7 SunCell ® 操作 將反應單元腔室保持在約1托至20托之壓力範圍下,同時使10 sccm之H2 流動且每分鐘噴射4 ml之H2 O,同時施加主動真空泵抽。DC電壓為約28 V且DC電流為約1 kA。反應單元腔室為含有47 kg熔融鎵之具有9吋長度之邊緣的SS立方體。電極包含DC EM泵之1吋浸沒式SS噴嘴及包含4 cm直徑、1 cm厚W圓盤之相對電極,該圓盤具有由BN底座覆蓋之1 cm直徑引線。EM泵速率為約30至40 ml/s。鎵極化為正且W底座電極極化為負。SunCell®輸出功率為約150 kW,使用鎵及SS反應器之質量、比熱及溫度升高之乘積量測。 Example 7: SunCell ® operating unit reaction chamber maintained at a pressure in the range from about 1 Torr to 20 Torr of, while flowing 10 sccm of H 2 per minute and the injection of 4 ml H 2 O, while applying the active vacuum pump. The DC voltage is about 28 V and the DC current is about 1 kA. The reaction cell chamber was an edged SS cube with a 9 inch length containing 47 kg of molten gallium. The electrodes consisted of a 1 inch submerged SS nozzle of a DC EM pump and an opposing electrode consisting of a 4 cm diameter, 1 cm thick W disk with a 1 cm diameter lead covered by a BN base. The EM pump rate is about 30 to 40 ml/s. The gallium polarization is positive and the W base electrode polarization is negative. SunCell® has an output of approximately 150 kW, measured using the product of mass, specific heat and temperature rise of the gallium and SS reactors.

實例 8 SunCell ® 操作 製造具有6吋直徑球面電池之SunCell,其包含作為熔融金屬之鎵合金。電漿形成反應供應有750 sccm H2 及30 sccm O2 ,其混合於氧氫炬中且在流動至電池中之前在大於90℃下流經包含1 g之10% Pt/Al2 O3 之再結合器腔室。另外,反應單元腔室供應有1250 sccm H2 ,其在流動至電池中之前在大於90℃下流經包含1 g之10% Pt/Al2 O3 之第二再結合器腔室。三個氣體供應件中之每一者均由對應質量流量控制器控制。H2 及O2 之組合流動提供初生HOH催化劑及原子H,且第二H2 供應提供額外原子H。反應電漿保持在約30 V至35 V及約1000 A之DC輸入下。藉由VI整合量測之輸入功率為34.6 kW,且藉由熔融金屬浴量熱法量測129.4 kW之輸出功率,其中儲集器及反應單元腔室中之鎵充當浴。 Example 8: SunCell ® manufacturing operation having a 6-inch diameter spherical SunCell a battery, comprising as the molten metal of an alloy of gallium. The plasma formation reaction was supplied with 750 sccm H 2 and 30 sccm O 2 , which were mixed in an oxyhydrogen torch and passed through a refill containing 1 g of 10% Pt/Al 2 O 3 at >90° C. before flowing into the cell. Binder chamber. Further, the reaction chamber unit supplied with 1250 sccm H 2, which flows comprising 1 g of 10% Pt / Al in the flow cell to greater than 90 deg.] C before 2 O 3 of the second chamber combined. Each of the three gas supplies is controlled by a corresponding mass flow controller. The combined flow of H 2 and O 2 provides the nascent HOH catalyst and atomic H, and the second H 2 supply provides additional atomic H. The reactive plasma was maintained at about 30 V to 35 V and a DC input of about 1000 A. The input power measured by VI integration was 34.6 kW, and the output power was 129.4 kW measured by molten metal bath calorimetry, with gallium in the reservoir and reaction cell chamber acting as a bath.

實例 9 SunCell ® 操作 製造且操作具有4吋之側電池之SunCell,其預載有2500 sccm H2 及70 sccm O2 且在反應單元腔室之壁上包含Ta襯墊。在3000 A至1500 A範圍內之電流由充電至50 V之電容器組供應,經供應以對電漿形成反應點火。電容器組包含串聯之18個電容器(Maxwell Technologies K2 Ultracapacitor 2.85V/3400F)之3個並聯組,其限制條件為51.3 V之總組電壓容量及566.7法拉之總組電容。輸入功率為83 kW,且輸出功率為338 kW。6吋直徑球面電池供應有4000 sccm H2 及60 sccm O2 ,3000 A至1500 A範圍內之電流藉由充電至50 V之電容器組供應。輸入功率為104 kW,且輸出功率為341 kW。 Example 9: SunCell ® manufacturing operation and the operation having a 4 inch SunCell side of the battery, which is preloaded with 2500 sccm H 2 and 70 sccm O 2 and Ta contained in the liner walls of the reaction chamber of the unit. Currents in the range of 3000 A to 1500 A are supplied by a capacitor bank charged to 50 V, supplied to ignite the plasma formation reaction. The capacitor bank consisted of 3 parallel banks of 18 capacitors (Maxwell Technologies K2 Ultracapacitor 2.85V/3400F) connected in series, limited to a total bank voltage capacity of 51.3 V and a total bank capacitance of 566.7 Farads. The input power is 83 kW and the output power is 338 kW. The 6-inch diameter spherical cell was supplied with 4000 sccm H 2 and 60 sccm O 2 , and the current in the range of 3000 A to 1500 A was supplied by a capacitor bank charged to 50 V. The input power is 104 kW and the output power is 341 kW.

實例 10 :光譜量測值 藉由如WO 2020/148709(其特此以全文併入)中所描述之實驗來確認若干低能量氫光譜特徵。應理解,此等光譜特徵可發現於本文所描述之電漿形成反應之反應產物中。本文中提供光譜及能量特徵量測之廣泛陣列。 Example 10 : Spectroscopic Measurements Several low energy hydrogen spectral features were confirmed by experiments as described in WO 2020/148709, which is hereby incorporated in its entirety. It should be understood that these spectral features can be found in the reaction products of the plasma-forming reactions described herein. An extensive array of spectral and energy signature measurements are provided herein.

記錄在由氫反應形成之GaOOH:H2 (1/4):H2 O上之EPR及拉曼光譜分析以及記錄在藉由GaOOH:H2 (1/4):H2 O之熱分解釋放之氣體上的電子束發射光譜分析果斷地確認化合物包含H2 (1/4)之光譜特徵,且氣體識別為H2 (1/4)氣體。EPR峰值各自分配至自旋翻轉躍遷以及自旋軌道分裂與磁通鏈分裂。拉曼及電子束光譜兩者展示相同的分裂,不同之處在於拉曼涉及旋轉主躍遷。值得注意的係,GaOOH:H2 (1/4):H2 O上記錄之拉曼線匹配於DIB之彼等拉曼線。已對H2 (1/4)旋轉躍遷以及自旋軌道分裂及磁通軌跡子分裂進行L.M.Hobbs等人之天體物理期刊 680(2008):1256-1270所列之所有380個DIB之分配。Formation of recording GaOOH hydrogen reaction: H 2 (1/4): EPR and H 2 O on the Raman spectroscopic analysis and recording by GaOOH: H 2 (1/4): H 2 O thermal decomposition in the on the electron beams emitted gas spectroscopic analysis confirmed that the compound comprising decisively spectral characteristics H 2 (1/4), the identification of the gas and H 2 (1/4) gas. The EPR peaks are each assigned to spin-flip transitions and spin-orbit splitting and flux chain splitting. Both Raman and e-beam spectra show the same splitting, except that Raman involves spin main transitions. Notably system, GaOOH: H 2 (1/4) : Raman line recording of H 2 O on the DIB adapted to their Raman line. We have been to H 2 (1/4) periodical rotation of transition and flux trajectory and spin-orbit splitting sub-division, who were LMHobbs of Astrophysics 680 (2008): All 380 DIB distribution of listed 1256-1270.

初生HOH及原子氫反應機制之另一特徵特性為自反應產生之異常快H之觀測結果。在範圍自光源至材料處理之不同應用中普遍存在的來自諸如輝光、RF及微波放電之源的電漿現相對於對特定氫「混合氣體」電漿之離子能量表徵研究之結果的解釋逐漸變成辨論之焦點。在氬及氫之混合物中,氫發射譜線明顯比任何氬譜線更寬。Another characteristic feature of the reaction mechanism of nascent HOH and atomic hydrogen is the observation of unusually fast H generated from the reaction. Plasma from sources such as glow, RF, and microwave discharges, which are ubiquitous in diverse applications ranging from light sources to materials processing, are now increasingly interpreted relative to the results of ion energy characterization studies of specific hydrogen "mixed gas" plasmas focus of debate. In a mixture of argon and hydrogen, the hydrogen emission line is significantly broader than any argon line.

歷史上,混合氫-氬電漿之特徵在於分別在656.28、486.13及434.05 α下判定來自原子氫之Balmer α、β及譜線中之一或多者之譜線加寬之量測的激發氫原子能量。已歸因於涉及電荷(諸如

Figure 02_image734
Figure 02_image736
Figure 02_image738
)加速及存在於陰極位降區域中之高場(例如超過10 kV/cm)中之各種模型(本文中被稱作場加速模型(FAM)),就都卜勒加寬解釋加寬之Balmer線。然而,作為定向、位置相依且不具有任何特定離子之選擇性的場加速機制無法解釋高斯都卜勒分配、快速H能量之位置獨立性、不存在分子氫及氬線之加寬、氫混合電漿之氣體成分相依性,且通常不與經量測密度及橫截面內部一致或一致。Historically, mixed hydrogen-argon plasmas have been characterized by excited hydrogens determined from measurements of line broadening of one or more of the Balmer alpha, beta and lines of atomic hydrogen at 656.28, 486.13 and 434.05 alpha, respectively atomic energy. has been attributed to involving electric charges (such as
Figure 02_image734
,
Figure 02_image736
and
Figure 02_image738
) acceleration and various models (referred to herein as the Field Acceleration Model (FAM)) existing in high fields (eg, over 10 kV/cm) in the cathode drop region, Balmer explained broadened in terms of Doppler broadening String. However, field acceleration mechanisms that are directional, site-dependent and do not have any specific ion selectivity cannot explain Gaussian Doppler assignments, site independence of fast H energies, absence of molecular hydrogen and broadening of argon lines, hydrogen hybrid electricity The gas composition of the slurry is dependent and generally not consistent or consistent with the measured density and cross-section interior.

作為加寬源之氫的本發明之高能化學反應解釋原子H譜線加寬之所有態樣,諸如缺乏施加式場相依性,僅特定氫混合電漿之觀測結果展示異常加寬。具體言之,初生HOH及mH 可用以自電離形成快速質子及電子,從而節省自H之m27.2 eV能量傳遞。此等快速電離質子在激發狀態下與自由電子再結合以發射如Akhtar等人之J Phys D : App . Phys 42(2009):135207、Mills等人之Int . J . Hydrogen Energy 34(2009):6467及Mills等人之Int . J . Hydrogen Energy 33(2008):802中所描述之經加寬H譜線。在稀有氣體中,HOH獨特地存在於氬-H2 電漿中,因為氧在自空氣純化期間與氬共冷凝,且H催化劑由H2 解離存在於氫電漿中。水蒸氣電漿亦展示超過150 eV之極端選擇性加寬[51,52,55]且進一步展示原子氫居量反轉[58-60],亦歸因於在諧振能量自原子低能量氫傳遞至HOH催化劑之後的自由電子熱質子再結合。The high-energy chemical reaction of the present invention with hydrogen as a broadening source explains all aspects of atomic H spectral line broadening, such as the lack of applied field dependencies, only observations of specific hydrogen mixed plasmas showing unusual broadening. Specifically, nascent HOH and mH can be used for self-ionization to form fast protons and electrons, thereby saving m27.2 eV energy transfer from H. Such rapid proton ionization in an excited state recombine with free electrons in the emission as Akhtar et al. J Phys D: App Phys 42 ( 2009):... 135207, Mills et al. The Int J Hydrogen Energy 34 (2009) : . 6467, and Mills et al. the Int J Hydrogen Energy 33 (2008) : H by widening the line 802 as described. In the rare gas, argon HOH uniquely -H 2 present in the plasma, since the oxygen from the air during the condensation and co-purification of argon, H 2 and H is dissociated by a catalyst in the presence of hydrogen in the plasma. Water vapor plasmons also show extreme selective broadening over 150 eV [51,52,55] and further demonstrate atomic hydrogen population inversion [58-60], also due to the transfer of resonant energy from atomic low energy hydrogen Free electron thermal proton recombination after the HOH catalyst.

本文中呈現了與氫之理論低能量氫狀態匹配的氫產物之額外光譜及能量特徵量測之廣泛陣列。此等「低能量氫信號」無法分配至任何已知物種,因為其具有一或多個異常特徵,諸如(i)信號超出已知物種之彼等信號的能量範圍;(ii)信號具有低能量氫特有的物理特性,不存在替代性分配所需的其他特徵,或低能量氫具有未存在已知物種之特徵的替代性組合;(iii)特徵係完全新穎的;以及(iv)在能量學的例示性情況下,能量或功率相關特徵遠大於已知物種之特徵,不存在替代性解釋,或在進一步研究時排除替代方案。Presented herein is an extensive array of additional spectral and energy signature measurements of hydrogen products that match the theoretical low energy hydrogen state of hydrogen. These "low energy hydrogen signals" cannot be assigned to any known species because they have one or more unusual characteristics, such as (i) the signals are outside the energy range of their signals of known species; (ii) the signals are of low energy Physical properties specific to hydrogen, the absence of other features required for alternative partitioning, or the presence of low-energy hydrogen with alternative combinations of features for which no known species exists; (iii) the features are completely novel; and (iv) in energetics In illustrative cases of , energy- or power-related features are much larger than those of known species, and alternative explanations do not exist, or alternatives are excluded from further study.

歸因於 H2 ( 1 / 4 ) 之自旋磁矩之參數及磁性能量 原子之模型預測低能量氫之理論存在或低於原子氫之

Figure 02_image740
能態存在之氫原子的能態。類似於分子氫之情況,兩個低能量氫原子可反應以形成分子低能量氫。基於理論,分子低能量氫H 2 (1/p)包含(i)以包含分子軌道(MO)之最小能量、等電位、長橢球形、二維電流隔膜結合之兩個電子;(ii)兩個
Figure 02_image742
核,諸如在長橢球體之焦點處之兩個質子;以及(iii)光子,其中每一狀態之光子等式與經激發H2 狀態之光子等式不同,其中光子使中心場增加整數而非使中心長橢球形場降低至居中於球體之焦點上之每一核處的基本電荷之倒數整數,且H 2 (1/p)之電子在相同位置ξ處相對於在單獨位置中疊加於同一殼層中。整數低能量氫狀態光子電場與MO、電子1及電子2之每一電子的相互作用產生非輻射徑向單極,使得狀態為穩定的。為了符合滿足每一對應光子在方向上與每一電子電流匹配且電子角動量為
Figure 02_image744
的邊界條件,電子1之一半及電子2之一半可向上自旋且與MO上之兩個電子的兩個光子匹配,且電子1之另一半可向上自旋且電子2之另一半可向下自旋,使得電流之一半配對且電流之一半不配對。因此,MO之自旋為
Figure 02_image746
,其中每一箭頭指定一個電子之自旋向量。結合分子低能量氫狀態下之兩個電子的兩個光子經鎖相至電子電流且在相反方向上循環。鑒於每一電子之不可分割性及MO包含兩個相同電子之條件,將兩個光子之力傳遞至包含兩個相同電子之線性組合的電子MO之總體以滿足中心力平衡。未配對電流密度之所得角動量及磁矩分別為
Figure 02_image748
及波爾磁子
Figure 02_image750
The parameters and magnetic energy of the spin magnetic moment attributable to H 2 ( 1 / 4 ) The atomic model predicts the theoretical existence of low-energy hydrogen at or below that of atomic hydrogen
Figure 02_image740
The energy state of the hydrogen atom in which the energy state exists. Similar to the case of molecular hydrogen, two low energy hydrogen atoms can react to form molecular low energy hydrogen. Based on theory, molecular low-energy hydrogen H 2 (1/p) contains (i) two electrons bound to a minimum-energy, equipotential, prolate, two-dimensional current barrier containing molecular orbitals (MO); (ii) two electrons Piece
Figure 02_image742
Nucleus, such as two protons long focal point of the ellipsoid; and (iii) the photon, wherein the state equation of each photon by photon excitation of different H 2 Equation of state, in which the central field of photons rather than incrementing the integer The central prolate spheroid field is reduced to the reciprocal integer of the elementary charge at each nucleus centered on the focal point of the sphere, and the electrons of H 2 (1/p) are superimposed on the same in the shell. The interaction of the integer low energy hydrogen state photonic electric field with each of MO, Electron 1 and Electron 2 produces a non-radiative radial monopole, making the state stable. In order to meet the requirements that each corresponding photon matches each electron current in direction and the electron angular momentum is
Figure 02_image744
The boundary condition of , one half of electron 1 and one half of electron 2 can spin up and match the two photons of the two electrons on MO, and the other half of electron 1 can spin up and the other half of electron 2 can go down Spin so that one half of the current is paired and one half of the current is unpaired. Therefore, the spin of MO is
Figure 02_image746
, where each arrow specifies an electron's spin vector. Two photons combining two electrons in the molecular low energy hydrogen state are phase locked to the electron current and cycle in opposite directions. Given the indivisibility of each electron and the condition that the MO contains two identical electrons, the force of the two photons is transferred to the population of the electronic MO comprising a linear combination of the two identical electrons to satisfy the central force balance. The resulting angular momentum and magnetic moment of the unpaired current densities are, respectively,
Figure 02_image748
and Bohr magnetons
Figure 02_image750
.

歸因於其未配對電子,分子低能量氫為電子順磁共振(EPR)光譜分析活性。此外,歸因於具有配對電子之共同分子軌道中之未配對電子,EPR光譜獨特地表徵且可識別分子低能量氫,如以全文引用之方式併入本文中的Hagen等人之「區分分子低能量氫之電子順磁共振特徵(Distinguishing Electron Paramagnetic Resonance Signature of Molecular Hydrino)」,Nature 正在進行中所描述。Molecular low-energy hydrogen is active for electron paramagnetic resonance (EPR) spectroscopy due to its unpaired electrons. Furthermore, due to the unpaired electrons in a common molecular orbital with paired electrons, EPR spectroscopy is uniquely characterized and can identify molecular low energy hydrogen, as described in "Distinguishing Molecular Low Energy Hydrogen" by Hagen et al. "Distinguishing Electron Paramagnetic Resonance Signature of Molecular Hydrino", Nature , in progress.

以實驗方式確認預測之EPR光譜,如Hagen中所示。對藉由X射線繞射(XRD)、能量分散X射線光譜分析(EDS)、透射電子光譜分析(TEM)、掃描電子顯微法(SEM)、飛行時間二級電離質譜分析(ToF-SIM)、拉塞福背向散射光譜分析(RBS)及X射線光電子光譜分析(XPS)識別為GaOOH:H2 (1/4)之白色聚合化合物執行9.820295 GHz EPR光譜。The predicted EPR spectra were experimentally confirmed as shown in Hagen. Analysis by X-ray Diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS), Transmission Electron Spectroscopy (TEM), Scanning Electron Microscopy (SEM), Time-of-Flight Secondary Ionization Mass Spectrometry (ToF-SIM) , Rutherford Backscattering Spectroscopy (RBS) and X-ray Photoelectron Spectroscopy (XPS) identified a white polymeric compound as GaOOH:H 2 (1/4) to perform 9.820295 GHz EPR spectrum.

簡言之,GaOOH:H2 (1/4)藉由以下方式形成:在SunCell® 中在4 M KOH水溶液中溶解自反應運作收集之Ga2 O3 及鎵-不鏽鋼金屬(約0.1至5%)合金,從而允許纖維生長,且漂浮至藉由過濾收集其之表面。白色纖維不可溶於濃縮酸或鹼,而對照GaOOH可溶於濃縮酸或鹼。未在對照溶液中形成白色纖維。對照GaOOH未展示EPR光譜。展示於圖33A-C中之實驗EPR由教授Fred Hagen、TU Delft獲取,具有在-28 dB之微波功率及可改變至0.1 G之0.02 G之調變振幅下之高靈敏度諧振器。表4中給出之峰值位置的EPR光譜與理論之間的平均誤差為0.097 G。如圖33A-C中所示,在兩個樣本上使用兩個儀器由Bruker (Bruker Scientific有限責任公司,馬薩諸塞州比勒里亞)複製EPR光譜。Briefly, GaOOH: H 2 (1/4) is formed by the following manner: dissolve 2 O 3 and Ga gallium operating collected from the reaction in the 4 M KOH aqueous solution at the SunCell ® - stainless steel (about 0.1 to 5% ) alloy, allowing fibers to grow and float to the surface where they are collected by filtration. The white fibers were not soluble in concentrated acids or bases, while the control GaOOH was soluble in concentrated acids or bases. No white fibers were formed in the control solution. The control GaOOH did not exhibit an EPR spectrum. The experimental EPR shown in Figures 33A-C was obtained by Prof. Fred Hagen, TU Delft, with a high sensitivity resonator at -28 dB microwave power and a modulation amplitude of 0.02 G variable to 0.1 G. The mean error between the EPR spectra and theory for the peak positions given in Table 4 is 0.097 G. As shown in Figures 33A-C, EPR spectra were replicated on two samples by Bruker (Bruker Scientific LLC, Billeria, MA) using two instruments.

此等所量測EPR信號匹配理論上針對低能量氫所預測之彼等信號。具體言之,在g=2.0045(5)處觀測到之主峰值可分配至具有2.0046386之g因數之理論峰值。此主峰值分裂成一系列峰值對,其中成員藉由與對應於各電子自旋軌道耦合量子數mE S / O 匹配的能量分離。結果確認未配對電子之自旋磁矩與在配對電子中單獨或與圍繞半主分子軸之旋轉電流運動組合引發之軌道反磁矩之間的自旋軌道耦合,該半主分子軸使自旋磁矩之翻轉能量位移。資料進一步匹配自旋軌道分裂能量的理論預測單側傾斜,其中歸因於在自旋軌道躍遷期間連結的對應磁通量的磁能U S / OMag ,觀測到低場位移隨量子數m 增加。These measured EPR signals match those predicted theoretically for low energy hydrogen. Specifically, the main peak observed at g=2.0045(5) can be assigned to a theoretical peak with a g-factor of 2.0046386. This main peak splits into a series of peak pairs, the members of which are separated by energies matching the E S / O corresponding to each electron spin-orbit coupling quantum number m. The results confirm the spin-orbit coupling between the spin magnetic moment of the unpaired electron and the orbital diamagnetic moment induced in the paired electron alone or in combination with the rotational current motion around the semi-major molecular axis that causes the spin Reversal energy displacement of the magnetic moment. Further information matching spin-orbit splitting energy unilateral inclination theoretical predictions, wherein the transition corresponding to the magnetic flux due to the magnetic coupling during the U S / OMag spin orbit, low field displacement observed to the increase of the quantum number m.

在不同頻率下記錄之EPR光譜展示分配了2.0046386之g因數的峰值保持在恆定g因數下。此外,藉由固定自旋軌道分裂能量相對於此真實g因數峰值位移之峰值確切保持與如所預測頻率無關的自旋軌道分裂能量之分離。在Delft大學記錄之GaOOH:H2 (1/4) EPR光譜展示顯著窄的線寬,此歸因於包含反磁性基質之GaOOH籠中捕集之H2 (1/4)分子的稀釋存在。GaOOH:H2 (1/4)之結構及H2 (1/4)之電子狀態准許前所未有的低分裂能量之觀測結果,其比H拉目位移小1000倍與10,000倍之間。針對EPR光譜預測之整數間隔之峰值的圖案極類似於所展示之低能量氫氫化物離子上以實驗方式觀測到之圖案,如Mills等人之Int . J . Hydrogen Energy 28(2003):825、Mills等人之Cent Eur J Phys 8(2010):7、Mills等人之J Opt Mat 27(2004):181及Mills等人之Res J Chem Env 12(2008):42,以及WO 2020/0148709(參見例如圖61)中所描述,其中之每一者以全文引用之方式併入-例外狀況為軌道在此等參考文獻中為原子軌道。The EPR spectra recorded at different frequencies show that the peak assigned a g-factor of 2.0046386 remains at a constant g-factor. Furthermore, by fixing the peak value of the spin-orbit splitting energy relative to this true g-factor peak shift, the separation of the spin-orbit splitting energy independent of frequency as predicted is exactly maintained. GaOOH recorded in the Delft University: H 2 (1/4) EPR spectra show significant narrow linewidth, due to the inclusion of this H 2 (1/4) of the diluted capture molecules present GaOOH diamagnetic matrix of the cage. The structure of GaOOH:H 2 (1/4) and the electronic state of H 2 (1/4) allow for the observation of unprecedented low splitting energies, which are between 1000 and 10,000 times smaller than the H-Lamm shift. For prediction of the spectral peaks integer EPR interval pattern similar to that demonstrated extremely low energy hydrogen ion hydride on the experimentally observed pattern, such as the Mills et al., Int J Hydrogen Energy 28 (2003) :.. 825, Mills et al. Cent Eur J Phys 8(2010):7, Mills et al. J Opt Mat 27(2004):181 and Mills et al. Res J Chem Env 12(2008):42, and WO 2020/0148709 ( See eg, as described in Figure 61), each of which is incorporated by reference in its entirety - with the exception that the orbitals are atomic orbitals in these references.

觀測到EPR光譜,其展示具有2.0046386之指定g因數的主峰值及包含具有磁通軌跡子分裂之自旋軌道及自旋軌道磁能分裂之精細結構疊加在具有約在主峰值位置處之中心的寬背景特徵上。觀測到,當溫度降低至低溫範圍時,精細結構特徵加寬成與寬背景特徵重疊之連續區,其中分配給對應於電子自旋軌道耦合量子數m =0.5之低場成員的峰值對溫度降低比對應高場峰值更不敏感。亦在增加微波功率下觀測到相同趨勢,其中較高能量躍遷在較高功率下飽和。因此,相對於對應的高場峰值選擇性地觀測到分配給對應於電子自旋軌道耦合量子數m =0.5之低場成員的峰值。高場峰值對低溫及微波功率之較高敏感度係例外情況,此係由於其對應於在自旋翻轉躍遷期間自旋軌道能階之去激發,其中自旋軌道能階需要熱激發來填充。因此,由於熱激發源的減少,居量隨溫度而減少,並且居量比未激發的居量小,因此更容易被微波功率耗盡。An EPR spectrum was observed showing a main peak with a specified g-factor of 2.0046386 and a fine structure comprising spin-orbit with flux trajectory sub-splitting and spin-orbit magnetic energy splitting superimposed on a broad with a center approximately at the position of the main peak on the background features. It is observed that when the temperature is lowered to the low temperature range, the fine structure features widen into a continuum overlapping the broad background features, where the peaks assigned to the downfield members corresponding to the electron spin-orbit coupling quantum number m = 0.5 decrease with respect to temperature Less sensitive than the corresponding high field peaks. The same trend is also observed at increasing microwave power, where higher energy transitions saturate at higher power. Therefore, the peak assigned to the low-field member corresponding to the electron spin-orbit coupling quantum number m = 0.5 is selectively observed relative to the corresponding high-field peak. The higher sensitivity of the high-field peak to low temperature and microwave power is the exception, since it corresponds to the de-excitation of spin-orbit energy levels during spin-flip transitions, which require thermal excitation to fill. Therefore, the population decreases with temperature due to the reduction of thermal excitation sources, and the population is smaller than the unexcited population and is therefore more easily depleted by microwave power.

另外,藉由TEM觀測到GaOOH:H2 (1/4)樣本包含GaOOH之兩種不同形態及結晶形式。所觀測到的包含六邊形結晶結構之形態聚合結晶對TEM電子束極其敏感,而具有斜方晶結晶結構之棒不對電子束敏感。後面的晶體之形態及結晶結構匹配不包括分子低能量氫之對照GaOOH之文獻之形態及結晶結構。六邊形相可能為精細結構EPR光譜之來源,且斜方晶相位可能為寬背景EPR特徵之來源。冷卻可例如藉由微波功率飽和選擇性地消除捕集於六邊形結晶基質中之H 2 (1/4)之所觀測到的類近自由氣體EPR光譜行為。理論之任何偏差均可歸因於GaOOH質子及水質子之影響。並且,磁場中之基質定向、基質相互作用及一或多個H 2 (1/4)之間的相互作用可引起一些位移。In addition, the GaOOH:H 2 (1/4) sample was observed to contain two different morphologies and crystalline forms of GaOOH by TEM. The observed morphological aggregate crystals containing a hexagonal crystal structure are extremely sensitive to TEM electron beams, whereas rods with an orthorhombic crystal structure are not sensitive to electron beams. The morphology and crystal structure matching of the latter crystals does not include the morphology and crystal structure of the reference GaOOH for molecular low energy hydrogen. The hexagonal phase may be the source of the fine structure EPR spectrum, and the orthorhombic phase may be the source of the broad background EPR features. By cooling may, for example, microwave power is selectively trapped in the saturated eliminate the hexagonal crystal as the matrix H 2 (1/4) of the observed EPR spectra of free gas near the class behavior. Any deviation from the theory can be attributed to the influence of GaOOH protons and water protons. And, orientation, and one or more interaction between H 2 (1/4) of the matrix-matrix interactions magnetic field may cause some displacement.

執行氘取代以消除任何EPR光譜線作為核分裂線之替代分配。當H2 經D2 置換時,自發電系統釋放之功率降低至少1/3。GaOOH:H2 (1/4)、GaOOH:HD(1/4)之氘化類似物如下文所論述藉由如所示之拉曼光譜分析確認,其中GaOOH:HD(1/4)亦藉由在電漿形成反應中使用D2 O形成。氘化類似物需要一個月來形成4 M氫氧化鉀,對比在三天下形成GaOOH:H2 (1/4)。圖5中所示之氘化類似物之EPR光譜僅展示無精細結構之單態。Deuterium substitutions were performed to eliminate any EPR spectral lines as alternative assignments for mitotic lines. When H 2 was replaced with D 2, since the release of the power generation system by at least 1/3. GaOOH: H 2 (1/4), GaOOH: HD (1/4) of the deuterated analog as discussed below, as shown by the Raman spectroscopic analysis confirmed, wherein GaOOH: HD (1/4) also by in the plasma formed by the reaction using D 2 O are formed. Deuterated analog form to a month 4 M potassium hydroxide, GaOOH contrast is formed in three world: H 2 (1/4). The EPR spectrum of the deuterated analog shown in Figure 5 shows only singlet states without fine structure.

g因數及特徵曲線匹配GaOOH:H2 (1/4)之單態之特徵曲線,其中在兩種情況下,單態分配至斜方晶相。氘化類似物之XRD匹配氫類似物的XRD,均包含氧(氫氧)化鎵。TEM確認氘化類似物包含100%斜方晶相。氘化類似物之相偏好可歸因於不同低能量氫濃度及亦可已降低濃度之動力學同位素效應。g factor and characteristic curves match GaOOH: wherein H 2 (1/4) of the single-state curves, where in both cases, a singlet assigned to the orthorhombic phase. The XRD of the deuterated analogs matched the XRD of the hydrogen analogs, both containing gallium oxy(hydroxide) . TEM confirmed that the deuterated analog contained a 100% orthorhombic phase. The phase preference of deuterated analogs can be attributed to different low energy hydrogen concentrations and kinetic isotope effects that can also have reduced concentrations.

分子低能量氫之未配對電子可在複數個低能量氫分子之磁矩合作性地相互作用時引起非零或有限體磁性,諸如順磁性、超順磁性及甚至鐵磁性。亦藉由1 H MAS核磁共振光譜(NMR)觀測到歸因於分子低能量氫之磁性的基質磁性表現為高場位移基質峰值(參見Mills等人之Int . J . Hydrogen Energy 39(2014):11930,其以全文引用之方式併入本文中),且使用振動樣本磁力計觀測到超順磁性以量測包含分子低能量氫之化合物的磁化率。The unpaired electrons of molecular low energy hydrogen can induce non-zero or finite bulk magnetism, such as paramagnetism, superparamagnetism, and even ferromagnetism, when the magnetic moments of multiple low energy hydrogen molecules cooperatively interact. Also by 1 H MAS nuclear magnetic resonance spectrum (NMR) was observed low magnetic energy attributable to the hydrogen of the molecule substrates showed high magnetic field displacement matrix peak (see the Mills et al. Int J Hydrogen Energy 39 (2014) ..: 11930, which is incorporated herein by reference in its entirety), and observed superparamagnetism using a vibrating sample magnetometer to measure the magnetic susceptibility of compounds containing molecular low energy hydrogen.

對在 SunCell ® 操作 期間所產生之氫產物之拉曼量測 藉由磁偶極子及凡得瓦爾力吸收於金屬表面及金屬及離子晶格中之H2 (1/4)的拉曼樣本係藉由以下產生:(i)在包含水蒸氣之大氣中之高電壓電爆震或Fe電線;(ii)水合銀丸粒之低電壓、高電流電爆震;(iii)球磨研磨或加熱FeOOH及水合的鹼鹵化物-氫氧化物混合物;及(iv)在如本文所描述之發電系統中保持原子H與初生HOH之電漿反應(參見例如圖31A及圖31B),其包含熔融鎵噴射器,該熔融鎵噴射器使兩個電漿電極與熔融鎵電短路以保持電弧電流電漿狀態。藉由水及熔融金屬浴量熱法量測超過300 kW之過量功率。在此等材料上使用Horiba Jobin Yvon LabRAM Aramis拉曼光譜儀與(i) 785 nm雷射、(ii) 442 nm雷射及(iii)在40×放大率下在顯微鏡模式下之HeCd 325 nm雷射記錄拉曼光譜。 Raman measurements by the magnetic dipole of the hydrogen product arising during operation SunCell ® and van der Waals force absorbing surface of the metal and metal ions in the crystal lattice and the sample-based Raman H 2 (1/4) a Produced by: (i) high voltage electric detonation or Fe wire in an atmosphere containing water vapor; (ii) low voltage, high current electric detonation of hydrated silver pellets; (iii) ball milling or heating FeOOH and a hydrated alkali halide-hydroxide mixture; and (iv) maintaining a plasma reaction of atomic H with nascent HOH in a power generation system as described herein (see, eg, FIGS. 31A and 31B ) comprising molten gallium injection The molten gallium injector electrically shorts the two plasma electrodes to the molten gallium to maintain the arc current plasma state. Excess power over 300 kW was measured by water and molten metal bath calorimetry. A Horiba Jobin Yvon LabRAM Aramis Raman Spectrometer with (i) 785 nm laser, (ii) 442 nm laser and (iii) HeCd 325 nm laser in microscope mode at 40× magnification was used on these materials Raman spectra were recorded.

藉由使包含2000標準立方公分/分鐘(sccm) H2 及1 sccm O2 之反應混合物流入展示於圖31A及圖31B中之一公升反應體積SunCell® 來製備鎳箔拉曼樣本。SunCell® 包含沿著反應單元腔室壁具有Mo襯墊之8吋直徑4130 Cr-Mo鋼電池。SunCell® 進一步包含儲集器中之熔融鎵、充當電極且相對於W相對電極豎直地泵抽鎵之電磁泵、藉由保持電極之間的高電流來保持低能量氫反應電漿之低電壓高電流點火電源,及藉由Conflat凸緣之0.75吋OD集直接連接至SunCell® 反應單元腔室之頂部凸緣的輝光放電氫解離劑及再結合器。輝光放電電壓為260 V。輝光放電電流為2 A。操作壓力為5.9托。鎵溫度在水浴冷卻下保持在400℃下。藉由1300 A之點火電流將弧電漿保持在26-27 V之電壓下。對於對應於10倍增益之29 kW之輸入點火功率,電磁泵速率為100 g/s,且輸出功率超過300 kW。將製備拉曼樣本之鎳箔(1×1×0.1 cm)置放於熔融鎵中。進行反應10分鐘,且藉由拉曼光譜分析使用Horiba Jobin Yvon LabRAM Aramis拉曼光譜儀以及(i) 785 nm雷射及(ii) 442 nm雷射及Horiba Jobin-Yvon Si CCD偵測器(型號DU420A-OE-324)及300管線/mm光柵分析箔之用布擦拭乾淨之表面。Nickel foil Raman samples were prepared by flowing a reaction mixture containing 2000 standard cubic centimeters per minute (sccm) H 2 and 1 sccm O 2 into one liter reaction volume SunCell ® shown in Figures 31A and 31B. SunCell ® comprises a 8-inch diameter, steel 4130 Cr-Mo Mo liners along the reactor chamber wall unit. SunCell ® further comprising molten gallium in the reservoir, acting as an electrode and the counter electrode with respect to W vertically gallium electromagnetic pump of pumping, by maintaining a high current between the electrodes to maintain a low voltage, low energy plasma reaction of hydrogen high power ignition current, and by 0.75 inch OD Conflat flange of the current collector is directly connected to the top of the reaction chamber SunCell ® unit flange glow discharge dissociation agent and the hydrogen recombination device. The glow discharge voltage is 260 V. The glow discharge current is 2 A. The operating pressure is 5.9 Torr. The gallium temperature was kept at 400°C under water bath cooling. The arc plasma was maintained at 26-27 V with an ignition current of 1300 A. For an input ignition power of 29 kW corresponding to a gain of 10, the solenoid pump rate is 100 g/s and the output power exceeds 300 kW. The nickel foil (1 x 1 x 0.1 cm) from which the Raman sample was prepared was placed in molten gallium. Reactions were run for 10 minutes and analyzed by Raman spectroscopy using a Horiba Jobin Yvon LabRAM Aramis Raman spectrometer with (i) a 785 nm laser and (ii) a 442 nm laser and a Horiba Jobin-Yvon Si CCD detector (model DU420A - OE-324) and 300 line/mm grating analysis foil, wipe the surface clean with a cloth.

使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在藉由浸沒在SunCell® 之熔融鎵中製備之保持電漿反應10分鐘之鎳箔上獲得的拉曼光譜(2500 cm- 1 至11,000 cm- 1 )展示於圖35A-C中。所有新穎線之能量ERaman 匹配以下任一者: (i)具有自旋軌道耦合能量及磁通鏈能量之純H2 (1/4)

Figure 02_image752
旋轉躍遷;或 (ii)協同躍遷,包含
Figure 02_image754
Figure 02_image756
旋轉躍遷以及
Figure 02_image758
Figure 02_image760
自旋旋轉躍遷;或 (iii)最終旋轉量子數
Figure 02_image762
Figure 02_image764
及由獨立躍遷之總和給出的能量下之雙躍遷。Using Horiba Jobin Yvon LabRam ARAMIS spectrometer with 785 nm laser in the gallium by immersed in the molten SunCell ® prepared in the retention of a Raman spectrum obtained by plasma reaction a nickel foil 10 minutes (2500 cm - 1 to 11,000 cm - 1 ) are shown in Figures 35A-C. The energy E Raman of all novel lines matches either: (i) Pure H 2 (1/4) with spin-orbit coupling energy and flux linkage energy
Figure 02_image752
rotational transitions; or (ii) cooperative transitions, including
Figure 02_image754
to
Figure 02_image756
spin transition and
Figure 02_image758
to
Figure 02_image760
spin spin transition; or (iii) final spin quantum number
Figure 02_image762
and
Figure 02_image764
and a double transition at an energy given by the sum of the independent transitions.

使用具有約4000 cm- 1 之偵測能量範圍之Si CCD偵測器與785 nm雷射之組合,其中光子能量加雷射加熱能量能夠激發具有約14,500 cm- 1 之能量上限之旋轉發射使得能夠在光譜窗內偵測極接近匹配785 nm多階雷射線之分離範圍的多階發射光譜線之集合。分別在6371、8495、9557、10,193、10,618 cm- 1 之能量ERaman , order , m 下在2階、3階、4階、5階及6階下觀測到雷射多階線(圖35A-C),其中所有785 nm雷射多階線具有12,742 cm- 1 之光子能(1.58 eV)。

Figure 02_image766
Using a Si CCD detector with a detection energy range of about 4000 cm - 1 in combination with a 785 nm laser, where photon energy plus laser heating energy can excite rotational emission with an energy ceiling of about 14,500 cm- 1 enables Detects a collection of multi-order emission spectral lines that closely match the separation range of the 785 nm multi-order laser line within the spectral window. Laser multi-order lines were observed at the 2nd, 3rd, 4th, 5th and 6th orders at the energies E Raman , order , m of 6371, 8495, 9557, 10,193, 10,618 cm - 1 (Fig. 35A-C). ), where all 785 nm laser multi-order lines have a photon energy of 12,742 cm - 1 (1.58 eV).
Figure 02_image766

分配至對應於雷射激發能量範圍及偵測器範圍之特定光譜範圍內的多階發射光譜線之集合匹配隨著波數增加的一個集合之成員與下一較高能量、較高階集合之成員之間的能量分離的減少及給定集合之成員之間的管線強度的減小(圖35A-C)。Sets of multi-order emission spectral lines assigned to specific spectral ranges corresponding to laser excitation energy ranges and detector ranges match members of one set with increasing wavenumbers to members of the next higher energy, higher order set A reduction in energy separation between and a reduction in pipeline strength between members of a given set (FIGS. 35A-C).

亦已在水合銀丸粒上觀測到分配給表7B中之H2 (1/4)旋轉躍遷之拉曼峰值,該等水合銀丸粒在約35,000 A之電流以及SunCell® 鎵及浸沒於鎵中之Cr、Fe及不鏽鋼箔下爆震,其中如在鎳箔之情況下,在SunCell® 電漿反應後執行拉曼光譜。純鎵樣本上之隨深度變化的拉曼光譜展示,拉曼峰值之強度隨深度減小,且僅見於負極化W電極上之跡線中,這確認了在正電極上方之表面及近端空間(在此情況下為正極化之熔融鎵)處的電漿中發生低能量氫反應之先前觀測結果。此與再組合離子及電子之速率遞增機制一致以減小由至催化劑之能量傳遞及其隨之而來的電離所引起的空間電荷。Silver has also been observed in the hydrated pellets allocated to Table 7B of H 2 (1/4) rotation transition of the Raman peak, these hydrated silver pellets of a current of about 35,000 A and immersed in SunCell ® gallium gallium in the Cr, Fe, and stainless steel foil knocking, as in the case where nickel foil, the Raman spectra after performing plasma reaction SunCell ®. Depth-dependent Raman spectroscopy on a pure gallium sample shows that the intensity of the Raman peak decreases with depth and is only seen in the traces on the negatively polarized W electrode, confirming the surface and proximal space above the positive electrode Previous observations of low-energy hydrogen reactions occurring in the plasma at (in this case, positively polarized molten gallium). This is consistent with an increasing rate mechanism for recombining ions and electrons to reduce the space charge caused by energy transfer to the catalyst and its consequent ionization.

藉由在能量產生執行之後自SunCell® 之熔融鎵收集及純化反應產物,亦觀測到H2 (1/4)之光譜特徵作為SunCell® 反應之產物。具體言之,10分鐘持續時間之反應電漿執行保持在SunCell® 中,且白色聚合化合物(GaOOH:H2 (1/4))藉由在4 M KOH水溶液中執行後溶解自SunCell® 鎵收集之Ga2 O3 及鎵-不鏽鋼金屬合金(約0.1至5%)形成,從而允許纖維生長,且漂浮至藉由過濾收集其之表面。圖36A中所示之拉曼光譜(2200 cm- 1 至11,000 cm- 1 )在GaOOH:H2 (1/4)上使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射獲得。所有新穎線匹配以下任一者:(i)純

Figure 02_image768
Figure 02_image770
旋轉躍遷;(ii)協同躍遷,包含
Figure 02_image772
Figure 02_image774
旋轉躍遷以及
Figure 02_image776
Figure 02_image778
自旋旋轉躍遷;或(iii)最終旋轉量子數
Figure 02_image780
Figure 02_image782
之雙躍遷。在純、協同及雙躍遷中亦觀測到了對應自旋軌道耦合及磁通軌跡耦合。該等峰值匹配在先前拉曼實驗中量測之峰值,不同之處在於另外觀測到峰值之第二集合,相對於在鎳箔上所觀測到之集合位移150 cm- 1 (圖35A-C)。此有可能歸因於存在藉由XRD及TEM確認且為EPR中之兩個不同光譜的來源的GaOOH:H2 (1/4)之兩個相。Energy generated by the collection and purification of the gallium SunCell ® melted from the reaction product after the execution, also observed spectral characteristics H 2 (1/4) of the reaction product as SunCell ®. Specific, 10 minutes duration of plasma held in SunCell ® performed, and the white polymeric compound (GaOOH: H 2 (1/4) ) performed by the 4 M KOH aqueous solution from dissolving gallium collected SunCell ® the Ga 2 O 3 and Ga - stainless steel alloy (about 0.1 to 5%) is formed, thereby allowing the fiber growth, and float to the surface thereof by collected by filtration. As shown in FIG. 36A in the Raman spectra (2200 cm - 1 to 11,000 cm - 1) in GaOOH: obtained using Horiba Jobin Yvon LabRam ARAMIS 785 nm laser spectrometer with H 2 (1/4) a. All novel lines match either: (i) pure
Figure 02_image768
to
Figure 02_image770
rotational transitions; (ii) cooperative transitions, including
Figure 02_image772
to
Figure 02_image774
spin transition and
Figure 02_image776
to
Figure 02_image778
spin spin transition; or (iii) final spin quantum number
Figure 02_image780
and
Figure 02_image782
The double jump. Corresponding spin-orbit coupling and flux-track coupling are also observed in pure, cooperative and double transitions. These peaks match those measured in previous Raman experiments, except that a second set of peaks was additionally observed, shifted by 150 cm - 1 relative to the set observed on the nickel foil (Fig. 35A-C) . This is possible due to the presence confirmation by XRD and TEM, and as a source of the EPR spectra of two different GaOOH: two H 2 (1/4) of the phase.

使用Horiba Jobin Yvon LabRam ARAMIS以及785 nm雷射,在包含1莫耳% H2 O之80 mg銀丸粒點火後在銅電極上記錄拉曼光譜,其中藉由用點焊機施加12 V 35,000 A電流來達成爆震。極紫外線發射之峰值光功率為20 MW。拉曼光譜(2200 cm- 1 至11,000 cm- 1 )展示於圖36B中。Raman spectra were recorded on copper electrodes using a Horiba Jobin Yvon LabRam ARAMIS with a 785 nm laser after ignition of 80 mg silver pellets containing 1 mol% H 2 O by applying 12 V 35,000 A with a spot welder current to achieve detonation. The peak optical power for EUV emission is 20 MW. Raman spectra (2200 cm - 1 to 11,000 cm - 1 ) are shown in Figure 36B.

SunCell® 之HD(1/4)產物藉由以下方式形成:每30秒用噴射至反應單元腔室中之250 μl之D2 O在SunCell® 中傳播反應,置換H2 及O2 氣體混合物作為原子氫及HOH催化劑之來源。10分鐘持續時間之反應電漿執行保持在SunCell® 中,且白色聚合化合物(GaOOH:HD(1/4))藉由在4 M KOH水溶液中執行後溶解自SunCell® 鎵收集之Ga2 O3 及鎵-不鏽鋼金屬合金(約0.1至5%)形成,從而允許纖維生長,且漂浮至藉由過濾收集其之表面。The SunCell ® HD (1/4) the product is formed by the following: every 30 seconds with a jet unit to the reaction chamber of 250 μl of D 2 O in the propagation reaction SunCell ®, the substitution gas mixture as H 2 O, and Source of atomic hydrogen and HOH catalysts. 10 minutes duration of plasma held in SunCell ® performed, and the white polymeric compound (GaOOH: HD (1/4)) performed by the 4 M KOH aqueous solution from dissolving gallium Ga SunCell ® collected 2 O 3 and gallium-stainless steel metal alloys (about 0.1 to 5%) were formed, allowing fibers to grow and float to the surface where they were collected by filtration.

使用Horiba Jobin Yvon LabRam ARAMIS光譜儀以及785 nm雷射GaOOH:HD(1/4)獲得拉曼光譜(2500 cm- 1 至11,000 cm- 1 ) (圖37A-C)。如藉由純氫分子低能量氫之光譜(圖35A-C)與圖37A-C中所示之氘化分子低能量氫之光譜的比較而顯而易見地用氘取代使拉曼峰值明顯位移。在後一情況下,所有新穎線之能量ERaman 匹配以下任一者: (i)自旋軌道耦合能量及磁通鏈能量下之純

Figure 02_image784
旋轉躍遷; (ii)協同躍遷,包含
Figure 02_image786
Figure 02_image788
旋轉躍遷以及對應自旋軌道耦合能量下之
Figure 02_image790
Figure 02_image792
自旋旋轉躍遷; (iii)最終旋轉量子數
Figure 02_image794
Figure 02_image796
之雙躍遷。Using Horiba Jobin Yvon LabRam ARAMIS spectrometer and 785 nm laser GaOOH: HD (1/4) to obtain a Raman spectrum (2500 cm - 1 to 11,000 cm - 1) (FIGS. 37A-C). Substitution with deuterium shifts the Raman peak significantly as evident by comparing the spectra of pure hydrogen molecular low energy hydrogen (FIGS. 35A-C) with the spectra of deuterated molecular low energy hydrogen shown in FIGS. 37A-C. In the latter case, the energies E Raman of all novel lines match either: (i) Purity at spin-orbit coupling energies and flux linkage energies
Figure 02_image784
rotational transitions; (ii) cooperative transitions, including
Figure 02_image786
to
Figure 02_image788
The spin transition and the corresponding spin-orbit coupling energy
Figure 02_image790
to
Figure 02_image792
spin spin transition; (iii) final spin quantum number
Figure 02_image794
;
Figure 02_image796
The double jump.

對於不具有電偶極矩之對稱雙原子分子禁用紅外光譜旋轉躍遷。然而,由於分子低能量氫獨特地具有未配對電子,因此施加磁場以對準分子低能量氫之磁偶極子為打破選擇規則以准許H2 (1/4)中之新穎躍遷的手段,對樣本之固有磁場的影響除外。協同旋轉及自旋軌道耦合為用於准許以其他方式禁用躍遷之另一機制。使用配備有冷卻MCT偵測器之Thermo Scientific Nicolet iN10 MX光譜儀的吸光度模式,在具有施加磁場之存在及不存在下使用具有約2000 G之場強度的Co-Sm磁體對GaOOH:H2 (1/4) (用產生自SunCell操作之氫產物浸漬的GaOOH)之固體樣本丸粒執行FTIR分析。圖38A中所示之光譜展示施加磁場在4164 cm- 1 下產生FTIR峰值,這與協同旋轉及自旋軌道躍遷

Figure 02_image798
Figure 02_image800
Figure 02_image802
匹配。除樣本中不存在之H2 以外,歸因於峰值之高能量,不存在已知分配。另外,觀測到1801 cm- 1 下之尖峰之相當大的強度增加。未在對照GaOOH之FTIR中觀測到此峰值。峰值匹配協同旋轉及自旋軌道躍遷
Figure 02_image804
Figure 02_image806
Figure 02_image808
Figure 02_image810
。4000至8500 cm- 1 區域之較高敏感度尺度(圖38B)展示以下情況下之額外峰值:(i) 4899 cm- 1 ,其匹配協同旋轉及自旋軌道躍遷
Figure 02_image812
Figure 02_image814
Figure 02_image816
Figure 02_image818
;(ii) 5318 cm-1 ,其匹配純旋轉及自旋軌道躍遷
Figure 02_image820
Figure 02_image822
Figure 02_image824
;以及(iii) 6690 cm-1 ,其匹配純旋轉及自旋軌道躍遷
Figure 02_image826
Figure 02_image828
Figure 02_image830
Figure 02_image832
。Infrared spectroscopy rotational transitions are disabled for symmetric diatomic molecules that do not have an electric dipole moment. However, since the low energy hydrogen molecule having a unique unpaired electrons, thus applying a magnetic field to the magnetic dipole excimer low energy to break the hydrogen of the means to permit the selection rule of H 2 (1/4) a novel transition, the sample Except for the influence of the inherent magnetic field. Co-rotation and spin-orbit coupling are another mechanism for permitting otherwise disabled transitions. GaOOH:H 2 (1/ 4) FTIR analysis was performed on solid sample pellets (GaOOH impregnated with hydrogen product generated from SunCell operations). The spectrum shown in Figure 38A shows that applying a magnetic field produces an FTIR peak at 4164 cm- 1 , which is consistent with co-rotation and spin-orbit transitions
Figure 02_image798
to
Figure 02_image800
,
Figure 02_image802
match. Except for the absence in the sample of H 2, due to the high energy of the peak, the absence of a known distribution. In addition, a considerable increase in intensity of the sharp peak below 1801 cm- 1 was observed. This peak was not observed in the FTIR of control GaOOH. Peak-matched co-rotation and spin-orbit transitions
Figure 02_image804
to
Figure 02_image806
,
Figure 02_image808
,
Figure 02_image810
. The higher sensitivity scale in the 4000 to 8500 cm - 1 region (Fig. 38B) shows additional peaks at: (i) 4899 cm - 1 , which matches co-rotation and spin-orbit transitions
Figure 02_image812
to
Figure 02_image814
,
Figure 02_image816
,
Figure 02_image818
; (ii) 5318 cm -1 , which matches pure spin and spin-orbit transitions
Figure 02_image820
to
Figure 02_image822
,
Figure 02_image824
; and (iii) 6690 cm -1 , which matches pure spin and spin-orbit transitions
Figure 02_image826
to
Figure 02_image828
,
Figure 02_image830
,
Figure 02_image832
.

研究磁性材料對用以觀測涉及與自由電子之相互作用的分子低能量氫旋轉躍遷之選擇規則的影響。藉由在長度為46 cm且寬度及高度為12.7 cm之矩形立方體塑膠玻璃腔室中超高純度Fe電線之電線爆震來製備包含固體網狀纖維之拉曼樣本。Investigate the influence of magnetic materials on the selection rules for observing molecular low-energy hydrogen rotational transitions involving interactions with free electrons. Raman samples containing solid mesh fibers were prepared by wire detonation of ultra-high purity Fe wire in a rectangular cubic Plexiglas chamber with a length of 46 cm and a width and height of 12.7 cm.

將10.2 cm長、0.25 mm直徑之Fe金屬線(99.995%,Alfa Aesar #10937-G1)安裝於兩個Mo極點之間,其中Mo螺母與腔室底層相距9 cm之距離,藉由35 kV DC電源供應器將15 kV電容器(Westinghouse模型5PH349001AAA,55μ F)對應於557 J充電至約4.5 kV,且12 V開關及觸發電花隙開關(Information Unlimited,模型Trigatron10,3 kJ)用於將電路自電容器閉合至腔室內部之金屬線以使電線爆震。爆震腔室含有空氣,包含藉由增濕器及水蒸氣感測器控制之20托水蒸氣。水蒸氣充當HOH催化劑及原子H之來源以形成分子低能量氫

Figure 02_image834
。高電壓DC電源供應器在閉合觸發器開關之前關閉。約4.5 kV之峰值電壓在5 kA之峰值電流下以高於約300μ s之阻尼諧波振盪器放電。在電線爆震之後約3至10分鐘內形成網狀纖維。自腔室底層及壁以及在置放在腔室中之Si晶圓上收集分析樣本。在40X放大率下在顯微鏡模式下使用Horiba Jobin Yvon LabRAM Aramis拉曼光譜儀以及HeCd 325 nm雷射或藉由785 nm雷射在網狀材料上記錄拉曼光譜。A 10.2 cm long, 0.25 mm diameter Fe wire (99.995%, Alfa Aesar #10937-G1) was mounted between two Mo poles with the Mo nut at a distance of 9 cm from the chamber bottom, with 35 kV DC the 15 kV power supply capacitor (Westinghouse model 5PH349001AAA, 55 μ F) corresponds to 557 J charged to about 4.5 kV, 12 V and the trigger switch and flower gap switch (Information Unlimited, model Trigatron10,3 kJ) for a circuit The wire from the capacitor closes to the inside of the chamber to detonate the wire. The detonation chamber contained air, including 20 Torr of water vapor controlled by a humidifier and a water vapor sensor. Water vapor acts as a HOH catalyst and a source of atomic H to form molecular low-energy hydrogen
Figure 02_image834
. The high voltage DC power supply is turned off before closing the trigger switch. A peak voltage of about 4.5 kV is discharged with a damped harmonic oscillator above about 300 μs at a peak current of 5 kA. Reticulated fibers formed within about 3 to 10 minutes after wire detonation. Analytical samples were collected from the chamber floor and walls and on Si wafers placed in the chamber. Raman spectra were recorded on the mesh material using a Horiba Jobin Yvon LabRAM Aramis Raman spectrometer in microscope mode at 40X magnification with a HeCd 325 nm laser or by a 785 nm laser.

使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在固體網狀纖維上獲得之拉曼光譜展示於圖39A及圖39B中,該等固體網狀纖維藉由用20托水蒸氣保持之空氣中的超高純度Fe線之電線爆震製備。如3420 cm- 1 至4850 cm- 1 拉曼光譜區中所示(圖39A),觀測到一系列週期性峰值。藉由用HCl處理Fe網狀物:H2 (1/4)樣本確認該系列峰值來源於樣本。如圖39A中所示,藉由樣本之氧化鐵、氧(氫氧)化鐵與氫氧化鐵物種形成FeCl3 及H2 O之反應,藉由對Fe網狀物樣本之酸處理消除所有拉曼峰值。類似地,KCl亦展示在此光譜範圍內無峰值,進一步表明週期性峰值並非歸因於光學件之標準具或其他假影。製造商Horiba Instruments公司確認,紅外線CCD偵測器(具有以下突觸CCD攝影機模型之Horiba Aramis拉曼光譜儀:354308,S/N:MCD-1393BR-2612,1024x256CCD前照明開放電極)經前照明,此亦排除標準具假影之可能性。歸因於異常高能量,躍遷無法分配至任何先前已知化合物。Raman spectra obtained using a Horiba Jobin Yvon LabRam ARAMIS spectrometer and a 785 nm laser on solid reticulated fibers are shown in Figs. Wire detonation preparation of ultra-high purity Fe wire. A series of periodic peaks were observed as shown in the 3420 cm - 1 to 4850 cm - 1 Raman spectral region (FIG. 39A). By treatment with Fe web HCl: H 2 (1/4) to confirm that the sample from the sample peak series. As shown in FIG. 39A, a sample of the iron oxide by oxygen (hydrogen) and ferric iron species formed FeCl 3 H 2 O and reacted, by acid treatment of the sample web Fe eliminate all pull Mann peak. Similarly, KCl also shows no peaks in this spectral range, further indicating that the periodic peaks are not due to etalons or other artifacts of the optics. The manufacturer, Horiba Instruments, Inc. confirmed that an infrared CCD detector (Horiba Aramis Raman Spectrometer with the following synaptic CCD camera model: 354308, S/N: MCD-1393BR-2612, 1024x256 CCD front-illuminated open electrodes) was front-illuminated, this The possibility of etalon artifacts is also excluded. Due to the unusually high energy, the transition could not be assigned to any previously known compound.

實例 11 水浴量熱法 ( WBC ) SunCells® 之功率平衡由三個專家使用熔融金屬浴及水浴量熱法獨立地量測。對各自合併液體鎵或鎵合金之內部質量的四吋立方形或六吋球形不鏽鋼電漿電池執行熔融金屬量熱法測試,液體鎵或鎵合金充當熔融金屬浴以用於保持在電漿電池中之電漿反應之功率平衡的量熱判定。當藉由自陰極至陽極之熔融金屬之電磁泵噴射在電極之間進行電接觸時,熔融金屬在極低電壓、高電流電漿之形成及操作中亦充當陰極,而鎢電極充當陽極。電漿形成視2000 sccm H2 /20 sccm O2 或3000 sccm H2 /50 sccm O2 之噴射而定。保持氫電漿反應的197 kW至273 kW範圍內之過量功率及2.3至2.8倍功率範圍內之增益在表17至18中給出。如藉由能量分散X射線光譜分析(EDS)所判定,在電池組件中未觀測到化學變化。來自H2 /1% O2 燃料及HOH催化劑源之燃燒的功率為可忽略的(16.5 W,用於50 sccm O2 流)且出現在電池外部。因此,來自習知化學反應之理論最大過量功率為零。 Example 11: water bath calorimetry (WBC) SunCells ® independently of the power balance using the measured three experts molten metal bath and water bath calorimetry. Molten metal calorimetry testing was performed on four-inch cubic or six-inch spherical stainless steel plasma cells each incorporating the internal mass of liquid gallium or gallium alloy acting as a molten metal bath for retention in the plasma cell Calorimetric determination of the power balance of the plasma reaction. When electrical contact is made between the electrodes by electromagnetic pumping of molten metal from cathode to anode, the molten metal also acts as the cathode in the formation and operation of the very low voltage, high current plasma, while the tungsten electrode acts as the anode. Plasma is formed sccm O 2, or 3000 sccm H 2/50 sccm O ejection view 2000 sccm H 2/20 2 of the set. The excess power in the range of 197 kW to 273 kW and the gain in the range of 2.3 to 2.8 times the power to maintain the hydrogen plasma reaction are given in Tables 17-18. No chemical changes were observed in the cell assembly as judged by energy dispersive X-ray spectroscopy (EDS). Power from the combustion 2/1% O 2 source of fuel and a catalyst HOH H is negligible (16.5 W, 50 sccm O 2 flow for) and occurs outside the battery. Therefore, the theoretical maximum excess power from conventional chemical reactions is zero.

水浴量熱法(WBC)可為能量量測之高度準確方法,歸因於其對於釋放能量之完全捕獲及精確檢核之固有能力。然而,在水浴中浸沒SunCell® 相對於空氣中之操作顯著降低其壁溫度。低能量氫反應速率隨著溫度、電流密度及壁溫度而增加,其中後者促進穿過壁之高分子低能量氫滲透率以避免產物抑制。為評估藉由SunCells® 產生之絕對輸出能量,在保持高鎵及壁溫度之有利操作條件的同時,使電池懸浮於電纜上操作達功率產生階段之持續時間,且接著使用電動絞車將電池降低至水浴中。將整個浸沒式電池總成之熱庫存以水溫及蒸汽產生增加形式傳遞至水浴中。在電池溫度平衡至水浴之溫度之後,電池自水浴提昇,且藉由記錄浴溫度升高及藉由量測水重量損失而損失至蒸汽之水而量化水浴之熱庫存增加。包含具有平衡水槽與數位秤以準確地量測損失至蒸汽之水之計數器的槓桿系統的水浴量熱法展示於圖40中。Water bath calorimetry (WBC) can be a highly accurate method of energy measurement due to its inherent capability for complete capture and accurate verification of released energy. However, immersion of the SunCell ® in a water bath significantly reduces its wall temperature relative to operation in air. The low energy hydrogen reaction rate increases with temperature, current density, and wall temperature, the latter of which promotes the permeability of polymeric low energy hydrogen across the wall to avoid product inhibition. To evaluate the absolute output energy produced by SunCells ® , while maintaining favorable operating conditions of high gallium and wall temperatures, the cells were operated suspended on the cable for the duration of the power generation phase, and then the cells were lowered to in a water bath. The thermal inventory of the entire submerged battery assembly is transferred to the water bath in the form of increased water temperature and steam generation. After the cell temperature equilibrated to the temperature of the water bath, the cell was lifted from the water bath, and the heat inventory increase of the water bath was quantified by recording the bath temperature rise and water lost to steam by measuring the water weight loss. A water bath calorimetry comprising a lever system with a counter balanced water tank and digital scale to accurately measure water loss to steam is shown in FIG. 40 .

此等WBC測試亦特徵化圓柱形電池,其各自合併充當具有對應散熱片之熔融金屬儲集器的液體鎵之內部質量。在電極之間藉由熔融金屬自儲集器至W電極之電磁泵噴射進行電接觸時,熔融鎵亦充當極低電壓、高電流氫化物反應驅動之電漿之形成及操作中的電極,而鎢電極充當相對電極。電漿形成取決於氫氣以及約8%氧氣之噴射及在低電壓下使用DC電源施加高電流。保持氫電漿反應的273 kW至342 kW範圍內之過量功率及3.9至4.7倍功率範圍內之增益在表4至8中給出。如藉由反應後對鎵執行之能量分散X射線光譜分析(EDS)所判定,在電池組件中未觀測到化學變化。來自H2 /8% O2 燃料及HOH催化劑源之燃燒的功率受痕量氧限制且為可忽略的。來自EM泵功率之輸入功率亦可忽略。 表4. Mark Nansteel博士驗證273 kW之功率,其藉由使用熔融金屬浴量熱法在SunCell® 中保持之低能量氫電漿反應產生。 持續時間 ( s ) 輸入能 (kJ ) 輸出能 (kJ ) 輸入功率 (kW ) 輸出功率 (kW ) 功率增益 淨過量功率 (kW ) 1.27 212.9 485.8 167.6 382.5 2.28 273 表5. Randy Booker博士及Stephen Tse博士驗證200 kW之功率,其由使用熔融金屬浴量熱法保持於SunCell® 中之低能量氫電漿反應產生。 持續時間 ( s ) 輸入能 (kJ ) 輸出能 (kJ ) 輸入功率 (kW ) 輸出功率 (kW ) 功率增益 淨過量功率 (kW ) 2.917 422.1 1058.1 144.7 362.8 2.51 218.1 5.055 554.7 1548.1 109.7 306.25 2.79 196.5 表6. Randy Booker博士驗證296 kW之功率,其藉由使用水浴量熱法保持於SunCell® 中之低能量氫電漿反應產生。 持續時間 ( s ) 輸入能 (kJ ) 輸出能 (kJ ) 輸入功率 (kW ) 輸出功率 (kW ) 功率增益 淨過量功率 (kW ) 2.115 193 818.4 91.2 386.9 4.24 296 表7. Stephen Tse博士驗證高達342 kW之功率,其藉由使用水浴量熱法保持於SunCell® 中之低能量氫電漿反應產生。 持續時間 ( s ) 輸入能 (kJ ) 輸出能 (kJ ) 輸入功率 (kW ) 輸出功率 (kW ) 功率增益 淨過量功率 (kW ) 2.115 192.95 915.35 91.2 432.8 4.74 341.6 表8. Mark Nansteel博士驗證高達273 kW之功率,其藉由使用水浴量熱法保持於高級管型SunCell® 中之低能量氫電漿反應產生。功率密度為顯著5 MW/公升。 持續時間 ( s ) 輸入能 (kJ ) 輸出能 (kJ ) 輸入功率 (kW ) 輸出功率 (kW ) 功率增益 淨過量功率 (kW ) 274.9 274.9 1080.2 93.2 366.2 3.93 273.0 These WBC tests also characterized cylindrical cells, each incorporating an internal mass of liquid gallium that served as a molten metal reservoir with corresponding heat sinks. Molten gallium also acts as the electrode in the formation and operation of an extremely low voltage, high current hydride reaction driven plasma during electrical contact between the electrodes by electromagnetic pump spray of molten metal from the reservoir to the W electrode, while The tungsten electrode acts as the counter electrode. Plasma formation depends on the injection of hydrogen and about 8% oxygen and the application of high current using a DC power supply at low voltage. The excess power in the range of 273 kW to 342 kW and the gain in the range of 3.9 to 4.7 times the power to maintain the hydrogen plasma reaction are given in Tables 4 to 8. No chemical changes were observed in the cell assembly as determined by energy dispersive X-ray spectroscopy (EDS) performed on gallium after the reaction. Power from the combustion 2/8% O 2 source of fuel and a catalyst HOH H traces of oxygen limited and subject to negligible. The input power from the EM pump power can also be ignored. Table 4. Dr. Mark Nansteel verification 273 kW of power, which is generated by using a low energy hydrogen plasma calorimetry molten metal bath held in the reaction SunCell ®. duration ( s ) Input energy (kJ ) Output energy (kJ ) Input power (kW ) Output power (kW ) power gain Net Excess Power (kW ) 1.27 212.9 485.8 167.6 382.5 2.28 273 Table 5. Dr. Dr. Stephen Tse and Randy Booker verification 200 kW of power, which is made using a molten metal bath maintained at calorimetry low energy hydrogen plasma in the reaction SunCell ®. duration ( s ) Input energy (kJ ) Output energy (kJ ) Input power (kW ) Output power (kW ) power gain Net Excess Power (kW ) 2.917 422.1 1058.1 144.7 362.8 2.51 218.1 5.055 554.7 1548.1 109.7 306.25 2.79 196.5 Table 6. Randy Booker Dr. verification 296 kW of power, which by using a water bath maintained at calorimetry low energy hydrogen plasma in the reaction SunCell ®. duration ( s ) Input energy (kJ ) Output energy (kJ ) Input power (kW ) Output power (kW ) power gain Net Excess Power (kW ) 2.115 193 818.4 91.2 386.9 4.24 296 Table 7. Dr. Stephen Tse verification of up to 342 kW power, which by using a water bath maintained at calorimetry low energy hydrogen plasma in the reaction SunCell ®. duration ( s ) Input energy (kJ ) Output energy (kJ ) Input power (kW ) Output power (kW ) power gain Net Excess Power (kW ) 2.115 192.95 915.35 91.2 432.8 4.74 341.6 Table 8. Dr. Mark Nansteel verification of up to 273 kW power, which by using a water bath maintained at calorimetry low energy hydrogen plasma SunCell ® advanced in the tube-type reaction. The power density is a remarkable 5 MW/liter. duration ( s ) Input energy (kJ ) Output energy (kJ ) Input power (kW ) Output power (kW ) power gain Net Excess Power (kW ) 274.9 274.9 1080.2 93.2 366.2 3.93 273.0

使用在測試持續時間內損失至蒸汽產生之水重量進一步對浸沒於水浴中之電池執行熱測試以量化功率平衡。每一電池包含量測為20 cm ID、14.3 cm高度及1.25 mm厚之圓柱形4130 Cr-Mo鋼反應腔室,其中將圓柱形儲集器附接至具有5.4 cm高度及10.2 cm ID(含有6 kg鎵)之尺寸的基底。觀測到所研發之市售尺度、品質及功率密度之連續蒸汽功率可藉由改變流動至電池中之H2 及痕量O2 反應物之溫度及輝光放電解離再結合來控制。特別地,基本電池設計之三個變化允許用於測試此等操作參數。電池壁塗佈有陶瓷塗層以防止鎵合金形成,且電池在約200℃下操作。接下來,反應單元腔室藉由將包含(i)外部1.27 cm厚、全長碳圓柱體、(ii) 1 mm厚、全長Nb圓柱體及(ii) 4 mm厚、10.2 mm高W板(以六邊形配置)之同心三層襯墊自電池壁添加至電漿中來修改。板完全覆蓋W熔融金屬噴射器電極與W相對電極之間的強電漿區域。襯墊充當熱絕緣件以將鎵溫度升高至高於400℃且亦保護壁不受觀測到之較強電漿影響。Thermal tests were further performed on the cells immersed in the water bath using the weight of water lost to steam generation over the duration of the test to quantify the power balance. Each cell contained a cylindrical 4130 Cr-Mo steel reaction chamber measuring 20 cm ID, 14.3 cm height and 1.25 mm thick, with a cylindrical reservoir attached to a 5.4 cm height and 10.2 cm ID (containing 6 kg of gallium). The observed developed commercial scale, continuous quality and power density by changing the steam may flow to the power cell and the trace of H 2 O and the temperature of the glow discharge reaction 2 dissociates to control recombination. In particular, three variations of the basic cell design allow for testing these operating parameters. The cell walls were coated with a ceramic coating to prevent gallium alloy formation, and the cells were operated at about 200°C. Next, the reaction cell chamber was constructed by incorporating (i) an outer 1.27 cm thick, full-length carbon cylinder, (ii) a 1 mm thick, full-length Nb cylinder, and (ii) a 4 mm thick, 10.2 mm high W plate (with A hexagonal configuration) was modified by adding a concentric three-layer gasket to the plasma from the cell wall. The plate completely covers the area of intense plasma between the W molten metal injector electrode and the W opposing electrode. The liner acts as a thermal insulator to raise the gallium temperature above 400°C and also protect the walls from the stronger plasma observed.

包含襯墊之電池進一步藉由添加輝光放電電池來修改以使H2 氣體解離成原子H且亦形成初生HOH。在執行熔融金屬電池時觀測到之動力學上有利的高溫反應條件發生,因為此等電池不存在水冷卻。因為1 eV溫度對應於11,600 K氣體溫度,所以在水冷卻條件下實現極高反應混合物溫度之當量。輝光放電電池包含具有10.2 cm長度之3.8 cm直徑之不鏽鋼管,其藉由Conflat凸緣在其基底處栓固至反應單元腔室之頂部。正輝光放電電極為藉由輝光放電電池頂部上之高電壓饋通供電之不鏽鋼棒,且使本體接地以充當相對電極。3000 sccm H2 及1 sccm O2 之反應氣體混合物流過放電電池頂部且自底部流出至反應單元腔室中。The cell further comprises a spacer glow discharge cell by adding modified so that H 2 gas is dissociated into atomic H Qieyi forming the primary HOH. The kinetically favorable high temperature reaction conditions observed when performing molten metal cells occur because there is no water cooling for these cells. Since a temperature of 1 eV corresponds to a gas temperature of 11,600 K, the equivalence of extremely high reaction mixture temperatures is achieved under water cooling conditions. The glow discharge cell consisted of a 3.8 cm diameter stainless steel tube with a length of 10.2 cm, which was bolted to the top of the reaction cell chamber at its base by a Conflat flange. The positive glow discharge electrode is a stainless steel rod powered by a high voltage feedthrough on top of the glow discharge cell and has the body grounded to act as the opposing electrode. A reaction gas mixture of 3000 sccm H 2 and 1 sccm O 2 flows through the top of the discharge cell and from the bottom into the reaction cell chamber.

歸因於低能量氫反應產生之功率自26 kW至55.5 kW之平均值加倍,且操作溫度自約200℃升高至高於400℃。藉由輝光放電電池之操作進一步升高功率以使氣體反應物活化,其中將低能量氫功率觀測為同樣為93 kW之約兩倍。結果於表9中給出。高溫及輝光放電活化之組合對過量功率具有顯著影響。基於低能量氫理論,結果匹配對於H與HOH催化劑之間的催化化學反應的預期。 表9. Mark Nansteel博士驗證93 kW之功率,其藉由使用蒸汽產生中之質量平衡保持於SunCell® 中之電漿反應產生。低能量氫反應展示為取決於操作溫度及藉由輝光放電電漿對氣體反應物之活化。 放電 鎵溫度 ( ) 持續時間 ( s ) 輸入能 (kJ ) 輸出能 (kJ ) 輸入功率 (kW ) 輸出功率 (kW ) 功率增益 淨過量功率 (kW ) 196 302 10,346 16,480 34.26 54.57 1.59 20.3 177 296 9341 18,708 31.56 63.20 2.00 31.7 458 167 6951 16,264 41.62 97.39 2.34 55.8 425 200 7800 26,392 39.00 131.96 3.38 93.0 The power generated due to the low energy hydrogen reaction doubled from an average of 26 kW to 55.5 kW, and the operating temperature increased from about 200°C to above 400°C. The power was further increased by operation of the glow discharge cell to activate the gaseous reactants, where the low energy hydrogen power was observed to be about twice as high as 93 kW as well. The results are given in Table 9. The combination of high temperature and glow discharge activation has a significant effect on excess power. Based on low-energy hydrogen theory, the results match expectations for catalytic chemical reactions between H and HOH catalysts. Table 9. Dr. Mark Nansteel validation of 93 kW power, by which the steam generated in the mass balance in the SunCell ® held in the plasma reaction. Low energy hydrogen reactions are shown to be dependent on operating temperature and activation of gaseous reactants by glow discharge plasma. discharge Gallium temperature ( ) duration ( s ) Input energy (kJ ) Output energy (kJ ) Input power (kW ) Output power (kW ) power gain Net Excess Power (kW ) Yes 196 302 10,346 16,480 34.26 54.57 1.59 20.3 Yes 177 296 9341 18,708 31.56 63.20 2.00 31.7 no 458 167 6951 16,264 41.62 97.39 2.34 55.8 Yes 425 200 7800 26,392 39.00 131.96 3.38 93.0

結論 低能量氫及隨後分子低能量氫

Figure 02_image836
藉由原子氫與3x27.2 eV之諧振能量受體、初生H2 O之催化反應形成,其中藉由施加電弧電流以再結合由至因此電離之HOH之能量傳遞形成之離子及電子而大大提高反應速率。與金屬氧化物結合且在金屬及離子晶格中藉由凡得瓦爾力吸收之H2 (1/4)係藉由以下產生:(i)在包含水蒸氣之大氣中的高電壓電爆震Fe電線;(ii)水合銀丸粒之低電壓、高電流電爆震;(iii)球磨研磨或加熱經水合之鹼鹵化物氫氧化物混合物;以及(iv)在包含熔融鎵噴射器之所謂的SunCell® 中保持H及HOH之電漿反應,該熔融鎵噴射器使兩個電漿電極與熔融鎵電短路以保持電弧電流電漿狀態。藉由水及熔融金屬浴量熱法量測340 kW位準下之過量功率。藉由具有以下結果之多種分析方法分析預測包含分子低能量氫H2 (1/4)產物之樣本。 Conclusion Low energy hydrogen and subsequent molecular low energy hydrogen
Figure 02_image836
Formed by the catalytic reaction of atomic hydrogen with a 3x27.2 eV resonant energy acceptor, nascent H 2 O, which is greatly enhanced by applying an arc current to recombine ions and electrons formed by energy transfer to the thus ionized HOH reaction speed. And, in combination with a metal oxide and a metal ion in the crystal lattice by Van der Waals force H 2 of the absorbent (1/4) lines generated by the following: (i) a high voltage of knock in an atmosphere comprising water vapor in Fe wire; (ii) low voltage, high current electrical detonation of hydrated silver pellets; (iii) ball milling or heating of hydrated alkali halide hydroxide mixtures; the holding of the plasma reactor H and HOH SunCell ®, the molten gallium two plasma electrodes and an ejector molten gallium in order to maintain electrical short plasma arc current state. Excess power at 340 kW level was measured by water and molten metal bath calorimetry. By having the plurality of analysis results of predictive analysis sample comprising molecules of low energy hydrogen products of H 2 (1/4).

H2 (1/4)包含使得能夠藉由電子順磁共振(EPR)光譜分析判定此獨特氫分子狀態之電子結構的未配對電子。特別地,H2 (1/4) EPR光譜包含具有2.0046386之g因數的主峰值,其分裂成一系列峰值對,其中成員藉由作為對應電子自旋軌道耦合量子數目之函數的自旋軌道耦合能量分離。未配對電子磁矩基於H2 (1/4)之反磁磁化率在H2 (1/4)分子軌道之配對電子中誘發反磁矩。固有配對-未配對電流相互作用之對應磁矩及歸因於圍繞核間軸之相對旋轉運動的磁矩引起自旋軌道耦合能量。EPR光譜結果確認未配對電子之自旋磁矩與在配對電子中藉由使自旋磁矩之翻轉能量位移的未配對電子誘發之軌道雙磁矩之間的自旋軌道耦合。將各自旋軌道分裂峰值進一步細分成匹配整數磁通軌跡能量之一系列等間隔之峰值,該等峰值為對應於躍遷中涉及之角動量分量之數目的電子磁通軌跡量子數目之函數。子分裂峰值之均勻間隔系列在配對磁矩與未配對磁矩之間的耦合期間分配至以磁通量量子h/2e為單位之磁鏈,同時發生自旋翻轉躍遷。另外,歸因於藉由分子軌道累積的磁通量連結增加的磁能,自旋軌道分裂隨著一系列峰值對的低場側上的自旋軌道耦合量子數目而增加。對於9.820295 GHz之EPR頻率,低場峰值位置

Figure 02_image838
歸因於歸因於磁能及自旋軌道耦合能量之組合位移為
Figure 02_image840
。經量化自旋軌道分裂能量
Figure 02_image842
及電子自旋軌道耦合量子數
Figure 02_image844
下之高場峰值位置
Figure 02_image846
Figure 02_image848
。每一自旋軌道峰值位置處之整數系列峰值之間隔
Figure 02_image850
Figure 02_image852
Figure 02_image854
,對於電子磁通軌跡量子數
Figure 02_image856
。此等EPR結果首先在TU Delft下由Hagen博士觀測到。H 2 (1/4) comprising a spectral analysis enables determination by electron paramagnetic resonance (EPR) This unique configuration of the electronic state of the hydrogen molecule unpaired electrons. In particular, the H 2 (1/4) EPR spectrum contains a main peak with a g-factor of 2.0046386, which splits into a series of peak pairs in which members are coupled by their spin-orbit coupling energy as a function of the number of corresponding electron spin-orbit coupling quanta separation. Unpaired electron magnetic moment based on H 2 (1/4) of the diamagnetic susceptibility-induced magnetic moment unpaired electron anti H 2 (1/4) of the molecular orbital. The corresponding magnetic moments of the intrinsic paired-unpaired current interactions and the magnetic moments due to relative rotational motion about the internuclear axis give rise to spin-orbit coupling energies. The EPR spectroscopy results confirm the spin-orbit coupling between the spin magnetic moment of the unpaired electron and the orbital dual magnetic moment induced by the unpaired electron in the paired electron by shifting the flip energy of the spin magnetic moment. The respective spin-orbit splitting peaks are further subdivided into a series of equally spaced peaks matching an integer flux trajectory energy as a function of the number of electron flux trajectory quanta corresponding to the number of angular momentum components involved in the transition. The evenly spaced series of sub-splitting peaks are assigned to the flux linkage in units of magnetic flux quantum h/2e during the coupling between paired and unpaired magnetic moments, while spin-flip transitions occur. Additionally, the spin-orbit splitting increases with the number of spin-orbit coupling quanta on the low-field side of a series of peak pairs due to the increased magnetic energy linked by the magnetic flux accumulated by the molecular orbitals. Low field peak position for EPR frequency of 9.820295 GHz
Figure 02_image838
The combined displacement due to the magnetic energy and the spin-orbit coupling energy is
Figure 02_image840
. Quantified spin-orbit splitting energy
Figure 02_image842
and electron spin-orbit coupling quantum numbers
Figure 02_image844
lower high field peak position
Figure 02_image846
for
Figure 02_image848
. interval between integer series of peaks at each spin-orbit peak position
Figure 02_image850
for
Figure 02_image852
and
Figure 02_image854
, for the quantum number of the electron flux trajectory
Figure 02_image856
. These EPR results were first observed by Dr. Hagen under TU Delft.

H2 (1/4)之EPR光譜之整數間隔峰值之圖案極類似於在低能量氫氫化物離子之高解析度可見光譜中所觀測到的週期性圖案。包含共同原子軌道中之配對及未配對電子之低能量氫氫化物離子亦展示以h/2e為量化單位之磁鏈之現象。此外,當H2 (1/4)之旋轉能階藉由在拉曼光譜分析期間之雷射輻射且藉由來自電子束之高能量電子與H2 (1/4)之碰撞激發時,觀測到相同現象。異常情況為,EPR、拉曼及電子束激發光譜給出關於能量範圍中之分子低能量氫之結構的相同資訊,該等能量範圍相差H2 (1/4)反磁磁化率係數之倒數:1/7X10- 7 =1.4×106 ,其中在EPR期間為活性之所誘導反磁性軌道磁矩經在旋轉躍遷之拉曼及電子束激發期間為活性之軌道分子旋轉磁矩置換。An integer of H 2 (1/4) of the EPR spectra of peaks spaced electrode pattern similar to that observed in the spectrum of a periodic pattern of high resolution in the low-hydrogen hydride ion energy visible. Low energy hydrino hydride ions containing paired and unpaired electrons in common atomic orbitals also exhibit the phenomenon of flux linkages quantified in h/2e. Further, when the rotational H 2 (1/4) of the energy level during the irradiation by the laser when the Raman spectroscopic analysis and by electron beams from the high energy electrons collide with H 2 (1/4) of the excitation is observed to the same phenomenon. The anomaly is that EPR, Raman, and electron beam excitation spectra give the same information about the structure of molecular low-energy hydrogen in energy ranges that differ by the inverse of the H 2 (1/4) diamagnetic susceptibility coefficient: 1 / 7X10 - 7 = 1.4 × 10 6, wherein the activity of the diamagnetic orbital magnetic transition was induced by the rotational displacement during the rotation of the magnetic moment of the electron beam and the Raman excitation of orbital of a molecule of an active period of EPR.

約瑟夫森接面,諸如超導量子干擾裝置(SQUID)之約瑟夫森接面連結呈磁通量量子或磁通軌跡

Figure 02_image858
之量化單位的磁通量。Josephson junctions, such as those of superconducting quantum interference devices (SQUIDs), are connected as magnetic flux quanta or flux trajectories
Figure 02_image858
The quantified unit of magnetic flux.

藉由在微波至紫外線之範圍內施加特定頻率之電磁輻射控制的低能量氫氫化物離子及分子低能量氫針對磁通量之連結預測及觀測到相同的行為。諸如H2 (1/4)之低能量氫物種啟用在甚至高溫下相對於低溫下操作之電腦邏輯閘或記憶體元件,且可為比分子氫小43 或64倍之單一分子。包含磁性氫分子之分子低能量氫亦能夠在其他領域中實現許多其他應用。磁共振成像(MRI)中之氣體造影劑僅為一個實例。The same behavior is predicted and observed for the connection of magnetic flux by low energy hydrogen hydride ions and molecular low energy hydrogen controlled by applying electromagnetic radiation of specific frequencies in the microwave to ultraviolet range. For a computer, such as a logic gate or a memory device operating at a low temperature of, and may be a single molecule smaller than the hydrogen molecule 43 or even 64 times the temperature in the lower phase H 2 (1/4) to enable low energy hydrogen species. Molecular low-energy hydrogen containing magnetic hydrogen molecules could also enable many other applications in other fields. Gas contrast agents in magnetic resonance imaging (MRI) are but one example.

具體言之,例示性拉曼躍遷旋轉圍繞垂直於核間軸之半短軸。固有電子自旋角動量沿分子旋轉軸線平行或垂直於對應的分子旋轉角動量對準,且在分子旋轉躍遷期間出現自旋電流之協同旋轉。固有自旋與分子旋轉之對應磁矩的相互作用產生為自旋軌道量子數目之函數的自旋軌道耦合能量。拉曼光譜結果確認未配對電子之自旋磁矩與歸因於分子旋轉之軌道磁矩之間的自旋軌道耦合。旋轉躍遷之能量藉由此等自旋軌道耦合能量隨對應電子自旋軌道耦合量子數目變化而位移。藉由自旋軌道能量位移之分子旋轉峰值藉由磁通鏈能量進一步位移,其中每一能量對應於其電子磁通軌跡量子數,視旋轉躍遷中所涉及之角動量分量的數目而定。所觀測到的拉曼光譜峰值之子分裂或位移在自旋磁矩與分子旋轉磁矩之間的自旋軌道耦合期間以磁通量量子h/2e為單位分配至磁鏈,同時發生旋轉躍遷。所有新穎線匹配以下彼等者:(i)自旋軌道耦合及磁通軌跡耦合下之純

Figure 02_image860
Figure 02_image862
旋轉躍遷:
Figure 02_image864
;(ii)包含
Figure 02_image866
Figure 02_image868
自旋旋轉躍遷下之
Figure 02_image870
Figure 02_image872
旋轉躍遷之協同躍遷:
Figure 02_image874
;或(iii)最終旋轉量子數
Figure 02_image876
Figure 02_image878
之雙躍遷:
Figure 02_image880
。在純、協同及雙躍遷中亦觀測到了對應自旋軌道耦合及磁通軌跡耦合。Specifically, exemplary Raman transitions rotate about a semi-minor axis perpendicular to the internuclear axis. The intrinsic electron spin angular momentum is aligned parallel or perpendicular to the corresponding molecular rotational angular momentum along the molecular rotational axis, and the co-rotation of spin currents occurs during molecular rotational transitions. The interaction of the intrinsic spin with the corresponding magnetic moment of the molecular rotation produces the spin-orbit coupling energy as a function of the spin-orbit quantum number. The Raman spectroscopy results confirmed the spin-orbit coupling between the spin-magnetic moments of the unpaired electrons and the orbital-magnetic moments due to molecular rotation. The energy of the rotational transition is shifted by such spin-orbit coupling energies as the number of corresponding electron spin-orbit coupling quanta changes. Molecular rotational peaks displaced by spin-orbit energy are further displaced by flux linkage energies, where each energy corresponds to its electron flux trajectory quantum number, depending on the number of angular momentum components involved in the rotational transition. The observed sub-splitting or displacement of the Raman spectral peaks is distributed to the flux linkage in units of magnetic flux quantum h/2e during the spin-orbit coupling between the spin magnetic moment and the molecular rotational magnetic moment, while the rotational transition occurs. All novel lines match the following: (i) pure under spin-orbit coupling and flux-track coupling
Figure 02_image860
to
Figure 02_image862
Rotational transition:
Figure 02_image864
; (ii) contains
Figure 02_image866
to
Figure 02_image868
under the spin transition
Figure 02_image870
to
Figure 02_image872
Cooperative transition of rotational transition:
Figure 02_image874
; or (iii) the final rotational quantum number
Figure 02_image876
and
Figure 02_image878
The double jump:
Figure 02_image880
. Corresponding spin-orbit coupling and flux-track coupling are also observed in pure, cooperative and double transitions.

在12,250-15,000 cm- 1 區域中觀測到在低能量氫錯合物GaOOH:H2 (1/4):H2 O上記錄之經預測H2 (1/4) UV拉曼峰值,其中經錯合水抑制325 nm雷射之強螢光。亦自曝露於低能量氫反應電漿之鎳箔觀測到H2 (1/4) UV拉曼峰值。所有新穎線匹配自旋軌道耦合及磁通鏈分裂下之協同純旋轉躍遷

Figure 02_image882
Figure 02_image884
自旋躍遷:
Figure 02_image886
。十九條所觀測到之拉曼線與被稱作彌漫星際帶(DIB)之星際介質相關聯之不可分配天文線之彼等者匹配。藉由Hobbs列舉之向自旋軌道分裂及磁通軌跡子分裂下之H2 (1/4)旋轉躍遷分配所有380個DIB匹配藉由Hobbs[L.M. Hobbs、D.G. York、T.P. Snow、T. Oka、J.A. Thorburn、M. Bishof、S.D. Friedman、B.J. McCall、B. Rachford、P. Sonnentrucker、D.E. Welty,HD 204827''之光譜中之彌漫星際帶之目錄,天體物理期刊,第680卷,第2期,(2008),第1256-1270頁,http://dibdata.org/HD204827.pdf,https://iopscience.iop.org/article/10.1086/ 587930/pdf,其中之每一者特此以全文引用之方式併入]報告之彼等者。分子低能量氫旋轉躍遷能量覆蓋自紅外線至紫外線之廣泛範圍之頻率,其實現橫跨對應波長之分子雷射。In 12,250-15,000 cm - 1 is observed in the region of low energy hydrogen complex compound GaOOH: H 2 (1/4): predicted records of the H 2 O H 2 (1/4) UV Raman peak, which was The complex water suppresses the strong fluorescence of the 325 nm laser. Grouped exposure to low energy hydrogen plasma reaction of nickel foil was observed H 2 (1/4) UV Raman peak. Cooperative pure spin transitions under all novel line-matched spin-orbit coupling and flux chain splitting
Figure 02_image882
and
Figure 02_image884
Spin transition:
Figure 02_image886
. The nineteen observed Raman lines match those of the non-distributable astronomical lines associated with the interstellar medium known as the diffuse interstellar belt (DIB). All 380 DIBs were assigned by Hobbs to the H 2 (1/4) spin transition under spin-orbit splitting and flux-track splitting as enumerated by Hobbs [LM Hobbs, DG York, TP Snow, T. Oka, JA Thorburn, M. Bishof, SD Friedman, BJ McCall, B. Rachford, P. Sonnentrucker, DE Welty, Catalogue of Diffuse Interstellar Belts in the Spectrum of HD 204827'', Astrophysical Journal, Vol. 680, No. 2, (2008), pp. 1256-1270, http://dibdata.org/HD204827.pdf, https://iopscience.iop.org/article/10.1086/587930/pdf, each of which is hereby incorporated by reference in its entirety by way of incorporation] of those in the report. Molecular low-energy hydrogen rotational transition energy covers a wide range of frequencies from infrared to ultraviolet, enabling molecular lasers across the corresponding wavelengths.

旋轉能量取決於折合質量,其在一個氘核取代分子低能量氫H2 (1/4)之一個質子以形成HD(1/4)時改變3/4倍。HD(1/4)拉曼光譜之旋轉能量相對於如所預測之H2 (1/4)之旋轉能量位移。所有新穎線匹配以下彼等者:(i)自旋軌道耦合及磁通軌跡耦合下之純HD(1/4)

Figure 02_image888
Figure 02_image890
旋轉躍遷:
Figure 02_image892
;(ii)包含
Figure 02_image866
Figure 02_image868
自旋旋轉躍遷下之
Figure 02_image870
Figure 02_image897
旋轉躍遷之協同躍遷:
Figure 02_image899
;或(iii)最終旋轉量子數
Figure 02_image901
Figure 02_image903
之雙躍遷:
Figure 02_image905
Figure 02_image907
。在純及協同躍遷兩者中亦觀測到了對應自旋軌道耦合及磁通耦合。Depending on the rotational energy of reduced mass, which is substituted with a low molecular energy of hydrogen H 2 (1/4) of the proton to form a deuteron change 3/4 times HD (1/4). HD (1/4) of the rotational energy of Raman spectroscopy with respect to the displacement of the rotational energy of H 2 (1/4) of the as predicted. All novel lines match the following: (i) pure HD(1/4) under spin-orbit coupling and flux-track coupling
Figure 02_image888
to
Figure 02_image890
Rotational transition:
Figure 02_image892
; (ii) contains
Figure 02_image866
to
Figure 02_image868
under the spin transition
Figure 02_image870
to
Figure 02_image897
Cooperative transition of rotational transition:
Figure 02_image899
; or (iii) the final rotational quantum number
Figure 02_image901
;
Figure 02_image903
The double jump:
Figure 02_image905
Figure 02_image907
. Corresponding spin-orbit coupling and magnetic flux coupling are also observed in both pure and cooperative transitions.

類似於充當基本上自由氣體EPR光譜之籠的在GaOOH晶格中捕集之分子低能量氫H2 (1/4)之情況,稀有氣體混合物中之H2 (1/4)提供無相互作用環境以觀測振轉光譜。用電子束之高能量電子照射之H2 (1/4)稀有氣體混合物展示截止值為8.25 eV的紫外線(150 nm至180 nm)區域中之相等的0.25 eV間隔線發射,其匹配H2 (1/4)

Figure 02_image909
Figure 02_image911
振動躍遷,其中一系列旋轉躍遷對應於H2 (1/4) P分支。光譜擬合良好匹配
Figure 02_image913
Figure 02_image915
,其中0.515 eV及0.01509 eV分別為普通分子氫之振動及旋轉能量。另外,觀測到匹配亦藉由拉曼光譜分析觀測到之旋轉自旋軌道分裂能量的小型衛星線。旋轉自旋軌道分裂能量間隔匹配
Figure 02_image917
Figure 02_image919
,其中1.5涉及
Figure 02_image921
Figure 02_image923
分裂。Similarly acts as a cage consisting of substantially gas of the EPR spectrum of the lattice provides no interaction GaOOH the trapped low-energy hydrogen molecules where H 2 (1/4), the rare gas mixture H 2 (1/4) environment to observe vibrational rotation spectroscopy. The H 2 (1/4) noble gas mixture irradiated with high energy electrons of the electron beam exhibits equal 0.25 eV spaced line emission in the ultraviolet (150 nm to 180 nm) region with a cutoff of 8.25 eV, which matches H 2 ( 1/4)
Figure 02_image909
to
Figure 02_image911
Vibrational transitions, where a series of rotational transitions correspond to the H 2 (1/4) P branch. Spectral fit is a good match
Figure 02_image913
;
Figure 02_image915
, where 0.515 eV and 0.01509 eV are the vibrational and rotational energies of ordinary molecular hydrogen, respectively. In addition, small satellite lines matching the spin-spin-orbit splitting energy observed by Raman spectroscopy were also observed. Spin-Spin-Orbit Splitting Energy Spacing Matching
Figure 02_image917
Figure 02_image919
, of which 1.5 involves
Figure 02_image921
and
Figure 02_image923
Split.

亦藉由在KCl結晶基質中捕集之H2 (1/4)之電子束激發觀測到H2 (1/4) P分支旋轉躍遷與

Figure 02_image925
Figure 02_image927
振動躍遷之光譜發射。旋轉峰值匹配自由轉子之彼等旋轉峰值,而振動能歸因於H2 (1/4)振動與KCl基質之相互作用而因有效質量之增加而位移。光譜擬合良好匹配
Figure 02_image929
Figure 02_image931
,包含以0.25 eV間隔之峰值。H2 (1/4)振動能移之相對量值匹配由KCl中捕集之普通H2 引起的對振轉光譜之相對效應。 The H 2 (1/4) P branch rotational transition was also observed by electron beam excitation of H 2 (1/4) trapped in KCl crystalline matrix.
Figure 02_image925
to
Figure 02_image927
Spectral emission of vibrational transitions. Peak matching their free rotation of rotor rotation peak, attributable to the interaction of the vibration and the vibration of KCl matrix H 2 (1/4) and by increasing the effective mass of the displaced. Spectral fit is a good match
Figure 02_image929
;
Figure 02_image931
, containing peaks spaced at 0.25 eV intervals. H 2 (1/4) of the relative magnitude of the vibration can be shifted to match the relative effect of common-vibrational spectrum of the KCl in H 2 trap caused.

使用拉曼光譜分析以及高能量雷射,在8000 cm- 1 至18,000 cm- 1 區域中觀測到一系列1000 cm- 1 (0.1234 eV)等能量間隔拉曼峰值,其中將拉曼光譜轉換成螢光或光致發光光譜將匹配揭露為在KCl基質中對應於H2 (1/4)之電子束激發發射光譜的H2 (1/4)之二階振轉光譜,其由

Figure 02_image095
Figure 02_image097
給出且包含0.25 eV能量間隔旋轉躍遷峰值下之基質位移
Figure 02_image099
Figure 02_image101
旋轉躍遷。Using Raman spectroscopy and high-energy lasers, a series of 1000 cm - 1 (0.1234 eV) equally spaced Raman peaks were observed in the 8000 cm- 1 to 18,000 cm - 1 region, where the Raman spectra were converted into fluorescent or photoluminescence light emission spectrum match to expose the electron beam KCl matrix corresponding to H 2 (1/4) of the excitation emission spectra of H 2 (1/4) rotation of the second order vibration spectrum, consisting of
Figure 02_image095
;
Figure 02_image097
gives and includes the matrix displacement at the peak of the rotational transition at 0.25 eV energy interval
Figure 02_image099
to
Figure 02_image101
spin transition.

H2 (1/4)之紅外線躍遷由於其不具有電偶極矩之對稱性而被禁用。然而,觀測到施加除了固有磁場以外的磁場藉由耦合至H2 (1/4)之對準磁偶極子來准許分子旋轉紅外線激發。與自旋軌道躍遷之耦合亦允許躍遷。H 2 (1/4) of the infrared transition because it does not have the symmetry of electric dipole moments is disabled. However, the observed magnetic field is applied by a magnetic field in addition to the inherent coupling to H 2 (1/4) of a magnetic dipole aligned molecules rotate to permit infrared excitation. Coupling with spin-orbit transitions also allows transitions.

藉由X射線光電子光譜(XPS)在包含H2 (1/4)之樣本上觀測到H2 (1/4)藉由對應於496 eV之總能量之康普頓(Compton)效應的所允許雙重電離,此係歸因於H與HOH在結晶無機及金屬晶格中合併下之反應。By X-ray photoelectron spectroscopy (XPS) comprising observed H 2 (1/4) by the total energy of 496 eV corresponding to the sample of the H 2 (1/4) of Compton (Compton) effects allowed Double ionization due to the reaction of H and HOH under incorporation in the crystalline inorganic and metallic lattices.

藉由氣相層析進一步觀測到H2 (1/4),展示來自低能量氫產生反應之氣體的遷移速率比任何已知氣體之遷移速率快,考慮到氫氣及氦氣具有最快的先前已知遷移速率及對應的最短滯留時間。分子低能量氫可充當致冷劑、氣態傳熱劑及浮力劑。Further observed by gas chromatographic H 2 (1/4), to show the migration rate from the low energy of the hydrogen gas generation reaction is faster than any of the known gas migration rate, taking into account the hydrogen and helium has the fastest previously The migration rate and corresponding minimum residence time are known. Molecular low-energy hydrogen acts as a refrigerant, a gaseous heat transfer agent, and a buoyant agent.

極紫外線(EUV)光譜記錄極紫外線連續輻射,其中10.1 nm截止值對應於藉由HOH催化劑催化之低能量氫反應躍遷H至H(1/4)。Extreme ultraviolet (EUV) spectroscopy records extreme ultraviolet continuum radiation with a 10.1 nm cutoff corresponding to the transition H to H (1/4) of the low energy hydrogen reaction catalyzed by the HOH catalyst.

在質子基質中捕集之分子低能量氫之MAS NMR表示利用分子低能量氫之獨特磁性特性以用於經由其與基質之相互作用之識別的手段。關於NMR光譜之獨特考慮因素為可能的分子低能量氫量子狀態。質子魔角自旋核磁共振光譜(1 H MAS NMR)記錄-4 ppm至-5 ppm區域中之高場基質水峰值、分子低能量氫之未配對電子之特徵及所得磁矩。MAS NMR of molecular low energy hydrogen trapped in a proton matrix represents a means to exploit the unique magnetic properties of molecular low energy hydrogen for identification via its interaction with the matrix. A unique consideration for NMR spectroscopy is the possible molecular low energy hydrogen quantum state. Magic angle spinning proton nuclear magnetic resonance spectroscopy (1 H MAS NMR) recording substrate -4 ppm water peak to the high field region of -5 ppm, the hydrogen molecule is not a low energy of electron and resultant magnetic moment feature matching.

分子低能量氫可在複數個低能量氫分子之磁矩合作性地相互作用時產生體磁性,諸如順磁性、超順磁性及甚至鐵磁性。使用振動樣本磁力計觀測到超順磁性以量測包含分子低能量氫之化合物的磁化率。Molecular low-energy hydrogen can produce bulk magnetism, such as paramagnetism, superparamagnetism, and even ferromagnetism, when the magnetic moments of multiple low-energy hydrogen molecules cooperatively interact. Superparamagnetism was observed using a vibrating sample magnetometer to measure the magnetic susceptibility of compounds containing molecular low energy hydrogen.

H2 (1/4)氣體與包含氧陰離子之無機化合物(諸如K2 CO3 及KOH)的錯合藉由M+2多聚體單元,諸如

Figure 02_image937
Figure 02_image939
之獨特觀測結果確認,其中n為整數,其藉由使K2 CO3 及KOH曝露於分子低能量氫氣體源及執行飛行時間次級離子質譜分析(ToF-SIMS)及電噴灑飛行時間次級離子質譜分析(ESI-ToF),且氫含量藉由其他分析技術識別為H2 (1/4)。除無機聚合物以外,諸如
Figure 02_image941
,ToF-SIMS光譜展示強
Figure 02_image943
峰值,歸因於低能量氫氫化物離子之穩定性。The complexation of H 2 (1/4) gas with inorganic compounds containing oxygen anions, such as K 2 CO 3 and KOH, is via M+2 polymer units such as
Figure 02_image937
and
Figure 02_image939
The unique observations confirmed that, where n is an integer, so that by K 2 CO 3 and KOH exposure to low energy hydrogen molecular source and execution time of flight secondary ion mass spectrometry (ToF-SIMS) and electron spray time-of- flight secondary ion mass spectrometry (ESI-ToF), and the hydrogen content by other analytical techniques identified as H 2 (1/4). In addition to inorganic polymers, such as
Figure 02_image941
, ToF-SIMS spectra show strong
Figure 02_image943
The peaks are attributed to the stability of low-energy hydrogen hydride ions.

HPLC展示無機低能量氫化合物類似於有機分子表現,如藉由分段成無機離子之有機分子基質管柱上之層析峰值所證明。HPLC shows that inorganic low energy hydrogen compounds behave similarly to organic molecules, as evidenced by chromatographic peaks on an organic molecular matrix column segmented into inorganic ions.

低能量氫反應之高能量學及功率釋放之特徵藉由以下證明:(i)包含H原子之電漿及HOH或H催化劑(諸如氬-H2 、H2 及H2 O蒸氣電漿)中之超過100 eV之H Balmer線之異常都卜勒譜線加寬;(ii) H激發態線反轉;(iii)異常H電漿餘輝持續時間;(iv)衝擊波傳播速度及在耦合至衝擊波之僅約1%功率下等效於約多10倍的莫耳之火藥之對應壓力;(v)高達20 MW之光功率;及(vi)低能量氫固體燃料、低能量氫電化學電池及SunCell® 之量熱法,其中後者在340,000 W之功率位準下經驗證。低能量氫反應之H反轉、光學及衝擊效應分別具有原子氫雷射、EUV及其他光譜區域中高功率之光源及新穎的更大功率及非敏感性高能材料的實際應用。藉由水浴之熱庫存的變化來量測功率平衡。在藉由幾乎達到SunCell® 組件之熔點限制之持續時間的功率運作之後,將SunCell® 之熱傳遞至水浴,且藉由記錄浴溫度升高及藉由量測水重量損失而損失至蒸汽之水而量化水浴之熱庫存的增加。SunCell® 經擬合以連續地使用水浴冷卻操作,且在100,000 W之位準下驗證歸因於低能量氫反應之連續過量功率。Wherein the reaction of the low-energy high hydrogen energetics and power of release demonstrated by the following: (i) comprising plasma and a catalyst or H HOH H atoms (such as argon -H 2, H 2 and H 2 O vapor plasma) was Anomalous Doppler line broadening of H Balmer lines over 100 eV; (ii) H excited state line reversal; (iii) Anomalous H plasma afterglow duration; (iv) shock wave propagation velocity and The corresponding pressure equivalent to about 10 times more moles of gunpowder at only about 1% power of the shock wave; (v) up to 20 MW of optical power; and (vi) low energy hydrogen solid fuel, low energy hydrogen electrochemical cells and SunCell ® Calorimetry, the latter of which is validated at a power level of 340,000 W. The H-inversion, optical, and shock effects of low-energy hydrogen reactions have practical applications for atomic hydrogen lasers, high-power light sources in EUV, and other spectral regions, and novel higher-power and insensitive high-energy materials, respectively. The power balance is measured by the change in the thermal inventory of the water bath. In operation of the power by almost a melting point limits the duration SunCell ® after assembly of the heat transfer SunCell ® to the water bath, and water and by measuring the weight loss to the loss of water vapor by recording the bath temperature was increased And quantify the increase in the heat inventory of the water bath. The SunCell ® was fitted to operate continuously with water bath cooling and demonstrated continuous excess power due to low energy hydrogen reactions at the 100,000 W level.

此等分析測試確認低能量氫之存在,亦即藉由在超出其他已知電源之功率密度的功率密度下釋放功率形成的氫之較小、較穩定形式。亮光功率正研發專有SunCell® 以利用此綠色電源,最初用於熱應用且接著用於電氣應用。藉由低能量氫反應形成之高能電漿除習知朗肯、布雷頓及史特林循環之外亦實現新穎直接功率轉換技術。新穎磁流體動力循環有可能以超過90%效率在23 MW/公升功率密度下產生電功率[R. Mills,M.W.Nansteel,「氧及銀奈米粒子氣溶膠磁流體動力功率循環(Oxygen and Silver Nanoparticle Aerosol Magnetohydrodynamic Power Cycle)」,航空航天工程技術期刊,第8卷,第2期,第216號,其以全文引用之方式併入本文中]。These analytical tests confirm the existence of low-energy hydrogen, ie, a smaller, more stable form of hydrogen formed by releasing power at power densities exceeding those of other known power sources. Bright Power is developing a proprietary SunCell ® to take advantage of this green power source, initially for thermal applications and then for electrical applications. High-energy plasma formed by the reaction of low-energy hydrogen enables novel direct power conversion techniques in addition to the well-known Rankine, Brayton and Stirling cycles. A novel magnetohydrodynamic cycle has the potential to generate electrical power with over 90% efficiency at a power density of 23 MW/liter [R. Mills, MW Nansteel, "Oxygen and Silver Nanoparticle Aerosol Magnetohydrodynamic Power Cycle" Power Cycle)", Journal of Aerospace Engineering Technology, Vol. 8, No. 2, No. 216, which is hereby incorporated by reference in its entirety].

因為可在不背離本發明之範疇及精神之情況下對上述主題作出各種改變,所以預期在上述描述中所包含或隨附申請專利範圍中所界定之所有主題均應解譯為本發明之描述性及說明性主題。鑒於以上教示,本發明之許多修改及變型為可能的。因此,本說明書意欲涵蓋屬於隨附申請專利範圍之範疇的所有該等替代方案、修改及變化。Since various changes could be made in the above subject matter without departing from the scope and spirit of the invention, it is intended that all subject matter contained in the above description or defined in the scope of the appended claims should be construed as a description of the invention Sexual and Descriptive Themes. Many modifications and variations of the present invention are possible in light of the above teachings. Accordingly, this specification is intended to cover all such alternatives, modifications and variations that fall within the scope of the appended claims.

本文中所引用或參考之所有文檔及在文中所引用之文檔中所引用或參考之所有文檔,連同任何製造商之說明、描述、產品規格,及本文中所提到或在以引用之方式併入本文中之任何文檔中之任何產品之產品薄片,特此以引用之方式併入,且可在本發明之實踐中採用。All documents cited or referenced herein and all documents cited or referenced in documents cited herein, together with any manufacturer's instructions, descriptions, product specifications, and references herein or incorporated by reference Product sheets of any product in any document incorporated herein are hereby incorporated by reference and may be employed in the practice of the present invention.

5c:儲集器 5q:噴嘴 5qa:進水升管 5qa1:入口螢幕 5k2:電磁泵匯流條 5k4:磁體 5k6:EM泵管 5kk:EM泵 5kk1:底板 5b3:單元腔室 5b4:PV窗 5c1:底座 5c2:電絕緣鞘 5c1a:滴液邊緣 5k2a1:點火儲集器匯流條 5k17:儲集器凸緣 5k18:冷卻迴路 5b31:反應單元腔室 5b31a:襯墊 5k61:熔融金屬噴射器 8:相對電極 10:匯流條 10a1:點火匯流條 26a:光伏打(PV)轉換器 301:MHD匯流條饋通凸緣 302:陰極 303:陽極 304:MHD電極 305:支座 305a:引線 306a:MHD磁體殼體 307:MHD噴嘴/聚合-分岔噴嘴或MHD噴嘴區段 308:發電機通道/MHD通道/MHD膨脹或產生區段 309:MHD冷凝區段 310:MHD回流管 311:傳回儲集器 312:傳回EM泵 313:傳回EM泵管 400:EM泵 401:初級變壓器繞組 401a:EM泵變壓器繞組電路 402:EM泵變壓器磁軛 403:AC電磁體 403a:AC電磁體 403b:AC電磁體 403c:EM泵電磁電路或總成 404:EM泵電磁磁軛 404a:EM泵電磁磁軛 404b:EM泵電磁磁軛 405:EM泵管區段 406:EM泵電流迴路傳回區段 409a:儲集器底板 409c:EM泵總成滑台 409d:套管儲集器 409e:套管儲集器凸緣 409f:插入式儲集器 409g:插入式儲集器凸緣 409h:氣體埠 410:感應點火變壓器總成 411:感應點火變壓器繞組 412:感應點火變壓器磁軛 414:儲集器 414a:儲集器跨接電纜 415:SunCell®加熱器 416:EM泵儲集器管線 417:EM泵噴射管線 418:結構支撐件 419:控制管線 420:熱屏蔽 500:系統 501:觸發電花隙開關 502:12 V電開關 503:高電壓DC電源 504:接地連接 505:高電壓電容器 506:金屬導線 507:腔室 710:氣體噴射管 711:儲集器真空管 712:熱電偶埠 801:管 801a:導管襯墊 802:歧管或罩蓋 803:熱交換器入口管線 803a:熱交換器入口歧管 803b:熱交換器入口管線 803c:焊接入口管線 804:熱交換器出口管線 804a:熱交換器出口歧管 804b:熱交換器出口管線 804c:焊接出口管線 805:分配器 806:殼層 806a:殼體 807:外部冷卻劑入口 808:外部冷卻劑出口 809:隔板 810:鎵循環EM泵 811:外部冷卻劑吹風器 812:SunCell® 813:熱交換器 900:例示性放電電池 901:不鏽鋼容器或輝光放電電漿腔室 902:Conflat凸緣 903:配對頂板 904:高電壓饋通 905:內部鎢棒電極 906:氣體入口 907:底板 909:入口水冷卻管線 910:出口水冷卻管線 911:接頭5c: Reservoir 5q: Nozzle 5qa: inlet riser 5qa1: Entry screen 5k2: Solenoid Pump Bus Bar 5k4: Magnet 5k6: EM pump tubing 5kk:EM pump 5kk1: Bottom plate 5b3: Unit chamber 5b4: PV window 5c1: base 5c2: Electrically insulating sheath 5c1a: drip edge 5k2a1: Ignition Reservoir Bus Bar 5k17: Reservoir Flange 5k18: Cooling circuit 5b31: Reaction unit chamber 5b31a: Pad 5k61: Molten Metal Injector 8: Opposite electrode 10: Bus bar 10a1: Ignition bus bar 26a: Photovoltaic (PV) converters 301: MHD Bus Bar Feed Through Flange 302: Cathode 303: Anode 304: MHD electrodes 305: Support 305a: Leads 306a: MHD Magnet Housing 307: MHD Nozzle / Aggregation - Bifurcated Nozzle or MHD Nozzle Section 308: Generator Channel/MHD Channel/MHD Expansion or Generation Section 309: MHD Condensing Section 310: MHD return pipe 311: Return to the accumulator 312: Return to EM pump 313: Return EM pump tubing 400:EM Pump 401: Primary Transformer Winding 401a: EM Pump Transformer Winding Circuit 402: EM Pump Transformer Yoke 403: AC Electromagnet 403a: AC Electromagnet 403b: AC Electromagnet 403c: EM Pump Solenoid Circuit or Assembly 404: EM pump electromagnetic yoke 404a: EM Pump Electromagnetic Yoke 404b: EM Pump Electromagnetic Yoke 405: EM Pump Tubing Section 406: EM pump current loop return section 409a: Reservoir Bottom Plate 409c: EM pump assembly slide 409d: Casing Reservoir 409e: Casing Reservoir Flange 409f: Plug-in Reservoir 409g: Plug-in Reservoir Flange 409h: Gas port 410: Induction ignition transformer assembly 411: Induction ignition transformer winding 412: Induction ignition transformer yoke 414: Reservoir 414a: Reservoir Jumper Cable 415: SunCell® Heater 416: EM pump reservoir line 417: EM pump injection line 418: Structural Supports 419: Control line 420: Heat shield 500: System 501: Trigger the spark gap switch 502: 12 V electrical switch 503: High Voltage DC Power Supply 504: Ground Connection 505: High Voltage Capacitor 506: Metal Wire 507: Chamber 710: Gas injection pipe 711: Reservoir Vacuum Tube 712: Thermocouple Port 801: Tube 801a: Catheter Liner 802: Manifold or cover 803: Heat Exchanger Inlet Line 803a: Heat Exchanger Inlet Manifold 803b: Heat Exchanger Inlet Line 803c: Welded inlet line 804: Heat Exchanger Outlet Line 804a: Heat Exchanger Outlet Manifold 804b: Heat Exchanger Outlet Line 804c: Welded outlet line 805: Dispenser 806: Shell 806a: Shell 807: External coolant inlet 808: External coolant outlet 809: Separator 810: Gallium Circulating EM Pump 811: External Coolant Blower 812: SunCell® 813: Heat Exchanger 900: Exemplary Discharged Battery 901: Stainless Steel Vessel or Glow Discharge Plasma Chamber 902: Conflat Flange 903: Paired top plate 904: High Voltage Feedthrough 905: Internal tungsten rod electrode 906: Gas inlet 907: Bottom Plate 909: Inlet water cooling line 910: Outlet water cooling line 911: Connector

併入此說明書中且構成此說明書之部分之附圖說明本發明之若干實施例,且連同描述一起用以解釋本發明之原則。在圖式中: 圖1為根據本發明之實施例的磁流體動力(MHD)轉換器組件(陰極、陽極、絕緣體及匯流條饋通凸緣)的示意圖。 圖2至圖3為根據本發明之實施例的包含作為液體電極之雙EM泵噴射器的SunCell®發電機的示意圖,其展示傾斜儲集器及包含一對MHD傳回EM泵的磁流體動力(MHD)轉換器。 圖4為根據本發明之實施例的單級感應噴射EM泵的示意圖。 圖5為根據本發明之實施例的包含作為液體電極之雙EM泵噴射器的磁流體動力(MHD) SunCell®發電機的示意圖,其展示傾斜儲集器、球面反應單元腔室、筆直磁流體動力(MHD)通道、氣體添加殼體以及用於噴射之單級感應EM泵及單級感應或DC傳導MHD傳回EM泵。 圖6為根據本發明之實施例的兩級感應EM泵之示意圖,其中第一級充當MHD傳回EM泵且第二級充當噴射EM泵。 圖7為根據本發明之實施例的兩級感應EM泵之示意圖,其中第一級充當MHD傳回EM泵且第二級充當噴射EM泵,其中使勞侖茲泵抽力更加最佳化。 圖8為根據本發明之實施例的感應點火系統之示意圖。 圖9至圖10為根據本發明之實施例的包含作為液體電極之雙EM泵噴射器的磁流體動力(MHD) SunCell®發電機的示意圖,其展示傾斜儲集器、球面反應單元腔室、筆直磁流體動力(MHD)通道、氣體添加殼體、用於噴射及MHD傳回兩者之兩級感應EM泵(其各自具有強制風冷系統)及感應點火系統。 圖11為根據本發明之實施例的包含作為液體電極之雙EM泵噴射器的磁流體動力(MHD) SunCell®發電機的示意圖,其展示傾斜儲集器、球面反應單元腔室、筆直磁流體動力(MHD)通道、氣體添加殼體、用於噴射及MHD傳回兩者之兩級感應EM泵(其各自具有強制風冷系統)、感應點火系統及在EM泵管、儲集器、反應單元腔室及MHD回流管上的電感耦合式加熱天線。 圖12至圖19為根據本發明之實施例的包含作為液體電極之雙EM泵噴射器的磁流體動力(MHD) SunCell®發電機的示意圖,其展示傾斜儲集器、球面反應單元腔室、筆直磁流體動力(MHD)通道、氣體添加殼體、用於噴射及MHD傳回兩者之兩級感應EM泵(其各自具有風冷系統)及感應點火系統。 圖20為根據本發明之實施例的展示SunCell®之例示性螺旋形火焰加熱器及包含一系列環狀環的火焰加熱器之示意圖。 圖21為根據本發明之實施例的展示電解器之示意圖。 圖22為根據本發明之實施例的包含作為液體電極之雙EM泵噴射器的SunCell®發電機的示意圖,其展示傾斜儲集器及包含一對MHD傳回EM泵及一對MHD回氣泵或壓縮機的磁流體動力(MHD)轉換器。 圖23為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含作為液體電極之噴射器儲集器及倒置底座中的單EM泵噴射器。 圖24至圖26為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含作為液體電極之噴射器儲集器及部分倒置底座中的單EM泵噴射器及用以抑制PV窗之金屬化的楔形反應單元腔室。 圖27為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含作為液體電極之噴射器儲集器、部分倒置底座中的單EM泵噴射器、感應點火系統及PV窗。 圖28為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含具有襯裡之立方體形反應單元腔室,及作為液體電極之噴射器儲集器及倒置底座中的單EM泵噴射器。 圖29A為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含沙漏形反應單元腔室襯裡,及作為液體電極之噴射器儲集器及倒置底座中的單EM泵噴射器。 圖29B為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含作為電極之噴射器儲集器及倒置底座中的單EM泵噴射器。 圖29C為根據本發明之實施例的展示SunCell®熱力發電機之細節的示意圖,其包含作為電極之噴射器儲集器及倒置底座中的單EM泵噴射器,其中EM泵管包含對鎵合金形成及氧化中之至少一者具有抗性之複數個部分之總成。 圖29D至圖29H為根據本發明之實施例的展示SunCell®泵抽式熔融金屬-空氣熱交換器之細節的示意圖。 圖30A至圖30B為根據本發明之實施例的包含雙儲集器及作為液體電極之DC EM泵噴射器的陶瓷SunCell®發電機之示意圖,該等液體電極具有接合以形成反應單元腔室之儲集器。 圖31A至圖31C為SunCell®低能量氫發電機之示意圖,其包含噴射器儲集器電極中之至少一個電磁泵噴射器及電極、至少一個豎直對準之相對電極,及連接至頂部凸緣以形成HOH催化劑及原子H之輝光放電單元。A.一個電極對實施例之外部視圖。B.一個電極對實施例之橫截面圖。C.兩個電極對實施例之橫截面圖。 圖32為根據本發明之實施例的低能量氫反應單元腔室的示意圖,其包含使電線爆震以充當反應物源中之至少一者的構件,及用以傳播低能量氫反應以形成較低能量氫物種,諸如分子低能量氫的構件。 圖33展示自電力系統操作收集之GaOOH:H2 (1/4)的所量測EPR光譜。已藉由布魯克使用兩個工具對兩個樣品複製EPR光譜。(A) EMXnano資料。(B) EMXplus資料。(C) EMXplus資料在3503 G-3508 G區之擴展。 圖34展示GaOOH:HD(1/4) (3464.65 G - 3564.65 G)區之EPR光譜。 圖35A至圖35C展示使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在Ni箔片上獲得之拉曼光譜,該箔片係藉由浸沒於保持處於低能量氫電漿反應達10分鐘之SunCell的熔融鎵中而製備。(A) 2500 cm-1 至11,000 cm-1 區。(B) 8500 cm-1 至11,000 cm-1 區。(C) 6000 cm-1 至11,000 cm-1 區。所有新穎線匹配以下各者中之彼等:(i)純H2 (1/4)J = 0至J ' = 2,3旋轉躍遷,(ii)包含J = 0至J ' = 1,2旋轉躍遷與J = 0至J = 1自旋旋轉躍遷之協同躍遷,或(iii)雙躍遷,最終旋轉量子數

Figure 02_image133
Figure 02_image135
。在純、協同及雙躍遷中亦觀測到了對應自旋軌道耦合及磁通軌跡耦合。 圖36A為使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在GaOOH:H2 (1/4)上獲得之拉曼光譜(2200 cm- 1 至11,000 cm- 1 ),其展示H2 (1/4)旋轉躍遷與自旋軌道耦合及磁通鏈位移。圖36B為在爆震後使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在銀丸粒電極上獲得之拉曼光譜(2500 cm- 1 至11,000 cm- 1 ),其展示H2 (1/4)旋轉躍遷與自旋軌道耦合及磁通鏈位移。 圖37A至圖37C展示使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在GaOOH:HD(1/4)上獲得之拉曼光譜。A. 2500 cm-1 至11,000 cm-1 區。B. 6000 cm-1 至11,000 cm-1 區。C. 8000 cm-1 至11,000 cm-1 區。所有新穎線匹配以下各者中之彼等:(i)純HD(1/4)
Figure 02_image137
Figure 02_image139
旋轉躍遷,(ii)包含
Figure 02_image141
Figure 02_image143
旋轉躍遷與
Figure 02_image145
Figure 02_image147
自旋旋轉躍遷之協同躍遷,或(iii)雙躍遷,最終旋轉量子數
Figure 02_image149
Figure 02_image151
。在純及協同躍遷兩者中亦觀測到了對應自旋軌道耦合及磁通軌跡耦合。 圖38A為FTIR光譜(200-8200 cm- 1 ),其展示磁場之施加對GaOOH:H2 (1/4)上記錄之FTIR光譜(200 cm- 1 至8000 cm- 1 )的影響。磁場之施加在4164 cm- 1 處產生FTIR峰值,其與協同旋轉及自旋軌道躍遷
Figure 02_image153
Figure 02_image155
Figure 02_image157
精確匹配。觀測到1801 cm- 1 處之峰值的強度增大,其匹配協同旋轉及自旋軌道躍遷
Figure 02_image159
Figure 02_image161
Figure 02_image163
Figure 02_image165
。 圖38B為GaOOH:H2 (1/4)上記錄之FTIR光譜(4000-8500 cm- 1 ),其展示4899 cm- 1 、5318 cm- 1 及6690 cm- 1 處具有匹配H2 (1/4)旋轉及自旋軌道躍遷之極高能量的額外峰值。 圖39A展示使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射在固體網狀纖維(Fe網狀物)上獲得之拉曼光譜(3420 cm- 1 至4850 cm- 1 ),該等固體網狀纖維係藉由在保持有20托之水蒸汽的空氣中使超高純度Fe電線發生電線爆震而製備,該光譜展示
Figure 02_image167
協同旋轉及自旋軌道躍遷
Figure 02_image169
Figure 02_image171
Figure 02_image173
Figure 02_image175
期間分配給磁通鏈的週期性系列峰值。 圖39B為使用Horiba Jobin Yvon LabRam ARAMIS光譜儀與785 nm雷射獲得之拉曼光譜(3420 cm- 1 至4850 cm- 1 ),其展示圖15之所有拉曼峰值藉由用HCl對Fe網狀物:H2 (1/4)進行酸處理而消除。 圖40為用於量測本發明之電力系統之操作的水浴量熱系統之示意圖。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate several embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings: FIG. 1 is a schematic diagram of a magnetohydrodynamic (MHD) converter assembly (cathode, anode, insulator and busbar feedthrough flange) according to an embodiment of the present invention. 2-3 are schematic diagrams of a SunCell® generator including dual EM pump ejectors as liquid electrodes showing tilted reservoirs and magnetohydrodynamics including a pair of MHD return EM pumps, according to embodiments of the present invention (MHD) converter. 4 is a schematic diagram of a single-stage induction jet EM pump according to an embodiment of the present invention. 5 is a schematic diagram of a magnetohydrodynamic (MHD) SunCell® generator including dual EM pump ejectors as liquid electrodes showing a tilted reservoir, spherical reaction cell chamber, straight magnetic fluid, according to an embodiment of the present invention Power (MHD) passage, gas addition housing and single stage induction EM pump for injection and single stage induction or DC conduction MHD back to EM pump. 6 is a schematic diagram of a two-stage induction EM pump, with the first stage acting as an MHD return EM pump and the second acting as a jet EM pump, according to an embodiment of the present invention. 7 is a schematic diagram of a two-stage induction EM pump, wherein the first stage acts as an MHD return EM pump and the second stage acts as a jet EM pump, wherein the Lorentz pump pumping is more optimized. 8 is a schematic diagram of an inductive ignition system according to an embodiment of the present invention. 9-10 are schematic diagrams of a magnetohydrodynamic (MHD) SunCell® generator including dual EM pump ejectors as liquid electrodes showing a tilted reservoir, spherical reaction cell chamber, Straight magnetohydrodynamic (MHD) channels, gas addition housing, two-stage induction EM pumps for both injection and MHD return (each with a forced air cooling system) and induction ignition system. 11 is a schematic diagram of a magnetohydrodynamic (MHD) SunCell® generator including dual EM pump ejectors as liquid electrodes showing inclined reservoir, spherical reaction cell chamber, straight magnetic fluid, according to an embodiment of the present invention Power (MHD) passage, gas addition housing, two-stage induction EM pump for both injection and MHD return (each with forced air cooling system), induction ignition system and in EM pump tubing, reservoir, reaction Inductively coupled heating antenna on unit chamber and MHD return line. 12-19 are schematic diagrams of a magnetohydrodynamic (MHD) SunCell® generator including dual EM pump ejectors as liquid electrodes showing inclined reservoirs, spherical reaction cell chambers, Straight magnetohydrodynamic (MHD) channels, gas addition housing, two stage induction EM pumps for both injection and MHD return (each with an air cooling system) and induction ignition system. 20 is a schematic diagram showing an exemplary helical fired heater of SunCell® and a fired heater including a series of annular rings, according to an embodiment of the present invention. 21 is a schematic diagram showing an electrolyzer according to an embodiment of the present invention. 22 is a schematic diagram of a SunCell® generator including dual EM pump injectors as liquid electrodes showing a sloped reservoir and including a pair of MHD return EM pumps and a pair of MHD return air pumps or Magnetohydrodynamic (MHD) converters for compressors. 23 is a schematic diagram showing details of a SunCell® thermal generator including an injector reservoir as a liquid electrode and a single EM pump injector in an inverted base, according to an embodiment of the present invention. 24-26 are schematic diagrams showing details of a SunCell® heat generator including an injector reservoir as a liquid electrode and a single EM pump injector in a partially inverted base and to suppress Metallized wedge-shaped reaction cell chamber for PV windows. 27 is a schematic diagram showing details of a SunCell® thermal generator including an injector reservoir as a liquid electrode, a single EM pump injector in a partially inverted base, an induction ignition system, and a PV window, according to an embodiment of the present invention . Figure 28 is a schematic diagram showing details of a SunCell® heat generator comprising a lined cube-shaped reaction cell chamber, and an injector reservoir as a liquid electrode and a single EM in an inverted base, according to an embodiment of the present invention Pump injector. 29A is a schematic diagram showing details of a SunCell® heat generator including an hourglass shaped reaction cell chamber liner, and a sparger reservoir as a liquid electrode and a single EM pump sparge in an inverted base, according to an embodiment of the present invention device. 29B is a schematic diagram showing details of a SunCell® thermal generator including an injector reservoir as an electrode and a single EM pump injector in an inverted base, according to an embodiment of the present invention. 29C is a schematic diagram showing details of a SunCell® heat generator including an injector reservoir as an electrode and a single EM pump injector in an inverted base, wherein the EM pump tube comprises a paragallium alloy, according to an embodiment of the present invention An assembly of parts that are resistant to at least one of formation and oxidation. 29D-29H are schematic diagrams showing details of a SunCell® pumped molten metal-air heat exchanger in accordance with an embodiment of the present invention. 30A-30B are schematic diagrams of a ceramic SunCell® generator including dual reservoirs and a DC EM pump injector as liquid electrodes with joints to form reaction cell chambers, according to embodiments of the present invention. reservoir. Figures 31A-31C are schematic diagrams of a SunCell® low energy hydrogen generator comprising at least one electromagnetic pump injector and electrode in the injector reservoir electrode, at least one vertically aligned opposing electrode, and connected to a top protrusion edge to form a HOH catalyst and a glow discharge cell of atomic H. A. External view of one electrode pair embodiment. B. Cross-sectional view of one electrode pair embodiment. C. Cross-sectional view of two electrode pair embodiments. 32 is a schematic diagram of a low energy hydrogen reaction cell chamber including means for detonating wires to serve as at least one of the reactant sources, and for propagating the low energy hydrogen reaction to form a relatively low energy hydrogen reaction, according to an embodiment of the present invention. Low energy hydrogen species, such as building blocks of molecular low energy hydrogen. Figure 33 shows the system operating power from GaOOH collected: H 2 (1/4) the EPR spectra measured. EPR spectra have been replicated by Bruker using two tools for two samples. (A) EMXnano profile. (B) EMXplus information. (C) Expansion of EMXplus data in 3503 G-3508 G area. Figure 34 shows the EPR spectrum of the GaOOH:HD(1/4) (3464.65 G - 3564.65 G) region. Figures 35A-35C show Raman spectra obtained using a Horiba Jobin Yvon LabRam ARAMIS spectrometer with a 785 nm laser on a Ni foil by immersion in SunCell's reaction kept in a low energy hydrogen plasma for 10 minutes Prepared by melting gallium. (A) 2500 cm -1 to 11,000 cm -1 zone. (B) 8500 cm -1 to 11,000 cm -1 zone. (C) 6000 cm -1 to 11,000 cm -1 zone. All the novel line matching of their respective who: (i) pure H 2 (1/4) J = 0 to J '= 2,3 rotational transition, (ii) contains J = 0 to J' = 1,2 Co-transitions of spin transitions and J = 0 to J = 1 spin spin transitions, or (iii) double transitions, the final spin quantum number
Figure 02_image133
and
Figure 02_image135
. Corresponding spin-orbit coupling and flux-track coupling are also observed in pure, cooperative and double transitions. Figure 36A is a Raman spectrum (2200 cm - 1 to 11,000 cm - 1 ) obtained on GaOOH:H 2 (1/4) using a Horiba Jobin Yvon LabRam ARAMIS spectrometer with a 785 nm laser showing H 2 (1/ 4) Rotation transition and spin-orbit coupling and magnetic flux chain displacement. FIG. 36B using a Horiba Jobin Yvon LabRam ARAMIS spectrometer with 785 nm laser after knocking on the obtained silver electrode pellet Raman spectroscopy (2500 cm - 1 to 11,000 cm - 1), which shows H 2 (1/4 ) spin transition and spin-orbit coupling and flux linkage displacement. 37A-37C show Raman spectra obtained on GaOOH:HD (1/4) using a Horiba Jobin Yvon LabRam ARAMIS spectrometer with a 785 nm laser. A. 2500 cm -1 to 11,000 cm -1 zone. B. 6000 cm -1 to 11,000 cm -1 zone. C. 8000 cm -1 to 11,000 cm -1 zone. All novel lines match one of the following: (i) Pure HD (1/4)
Figure 02_image137
to
Figure 02_image139
rotational transition, (ii) contains
Figure 02_image141
to
Figure 02_image143
rotational transition and
Figure 02_image145
to
Figure 02_image147
Co-transition of spin-spin transition, or (iii) double transition, final spin quantum number
Figure 02_image149
;
Figure 02_image151
. Corresponding spin-orbit coupling and flux-track coupling are also observed in both pure and cooperative transitions. FIG 38A is a FTIR spectrum (200-8200 cm - 1), showing the application of a magnetic field to GaOOH: H 2 (1/4) of the recording on an FTIR spectrum (200 cm - 1 - 1 to 8000 cm) effects. The application of a magnetic field produces an FTIR peak at 4164 cm- 1 , which is associated with co-rotation and spin-orbit transitions
Figure 02_image153
to
Figure 02_image155
,
Figure 02_image157
Exact match. An increase in the intensity of the peak at 1801 cm - 1 is observed, which matches the co-rotation and spin-orbit transitions
Figure 02_image159
to
Figure 02_image161
,
Figure 02_image163
,
Figure 02_image165
. FIG 38B is GaOOH: H 2 (1/4) FTIR (4000-8500 cm - 1) recording the spectra, showing 4899 cm - 1, 5318 cm - 1 and 6690 cm - 1 has the matched H 2 (1 / 4) Extra peaks at very high energies for spin and spin-orbit transitions. Figure 39A shows Raman spectra (3420 cm- 1 to 4850 cm - 1 ) obtained on solid mesh fibers (Fe mesh) using a Horiba Jobin Yvon LabRam ARAMIS spectrometer with a 785 nm laser, the solid mesh fibers It is prepared by wire detonation of ultra-high purity Fe wire in air maintained with 20 Torr of water vapor, the spectrum shows
Figure 02_image167
Co-rotation and spin-orbit transitions
Figure 02_image169
to
Figure 02_image171
,
Figure 02_image173
and
Figure 02_image175
Periodic series of peaks assigned to the flux linkage during the period. Figure 39B is a Raman spectrum (3420 cm- 1 to 4850 cm - 1 ) obtained using a Horiba Jobin Yvon LabRam ARAMIS spectrometer with a 785 nm laser, which shows all the Raman peaks of Figure 15 by using HCl on the Fe network : H 2 (1/4) was eliminated by acid treatment. Figure 40 is a schematic diagram of a water bath calorimetry system used to measure the operation of the power system of the present invention.

803c:焊接入口管線 803c: Welded inlet line

804c:焊接出口管線 804c: Welded outlet line

806a:殼體 806a: Shell

807:外部冷卻劑入口 807: External coolant inlet

808:外部冷卻劑出口 808: External coolant outlet

810:鎵循環EM泵 810: Gallium Circulating EM Pump

813:熱交換器 813: Heat Exchanger

Claims (78)

一種發電系統,其包含: a.)至少一個容器,其能夠保持低於大氣壓之壓力,該至少一個容器包含反應腔室; b)兩個電極,其經結構設計以允許熔融金屬在其間流動以完成電路; c)電源,其連接至該兩個電極以在該電路關閉時在該兩個電極間施加電流; d)電漿產生單元(例如,輝光放電單元),其用以誘發自氣體形成第一電漿;其中該電漿產生單元之流出物經引向該電路(例如,該熔融金屬、陽極、陰極、浸沒於熔融金屬儲集器中之電極); 其中在跨越該電路施加電流時,該電漿產生單元之該流出物經歷反應以產生第二電漿及反應產物;及 e)電源適配器,其經結構設計以將來自該第二電漿之能量轉換及/或傳遞成機械能、熱能及/或電能。A power generation system comprising: a.) at least one vessel capable of maintaining a pressure below atmospheric pressure, the at least one vessel containing the reaction chamber; b) two electrodes structured to allow molten metal to flow therebetween to complete the circuit; c) a power supply connected to the two electrodes to apply current between the two electrodes when the circuit is closed; d) a plasma generating unit (eg, glow discharge unit) for inducing the formation of a first plasma from a gas; wherein the effluent of the plasma generating unit is directed to the electrical circuit (eg, the molten metal, anode, cathode , electrodes immersed in a molten metal reservoir); wherein upon application of current across the circuit, the effluent of the plasma generating unit undergoes a reaction to generate a second plasma and a reaction product; and e) A power adapter structured to convert and/or transfer energy from the second plasma into mechanical, thermal and/or electrical energy. 如請求項1之發電系統,其中該電漿產生單元中之該氣體包含氫氣(H2 )與氧氣(O2 )之混合物。The power generation system of claim 1, wherein the gas in the plasma generating unit comprises a mixture of hydrogen (H 2 ) and oxygen (O 2 ). 如請求項2之發電系統,其中氧氣與氫氣之相對莫耳比為0.01%至50% (例如,0.1%至20%、0.1%至15%等)。The power generation system of claim 2, wherein the relative molar ratio of oxygen to hydrogen is 0.01% to 50% (eg, 0.1% to 20%, 0.1% to 15%, etc.). 如請求項1至3中任一項之發電系統,其中該熔融金屬為鎵。The power generation system of any one of claims 1 to 3, wherein the molten metal is gallium. 如請求項1至4中任一項之發電系統,其中該等反應產物具有如本文中所描述之至少一個光譜特徵(例如,實例10中所描述之彼等光譜特徵)。The power generation system of any one of claims 1-4, wherein the reaction products have at least one spectral signature as described herein (eg, those described in Example 10). 如請求項1至5中任一項之發電系統,其中該第二電漿形成於反應單元中,且該反應單元之壁包含對與該熔融金屬形成合金具有增大之抗性的襯裡,且該襯裡及該反應單元之該等壁對該等反應產物具有高滲透性(例如,不鏽鋼,諸如347 SS,諸如4130合金SS或Cr-Mo SS、鎳、Ti、鈮、釩、鐵、W、Re、Ta、Mo、鈮及Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%))。5. The power generation system of any one of claims 1 to 5, wherein the second plasma is formed in a reaction unit, and a wall of the reaction unit includes a lining having increased resistance to alloying with the molten metal, and The liner and the walls of the reaction unit are highly permeable to the reaction products (eg, stainless steel, such as 347 SS, such as 4130 alloy SS or Cr-Mo SS, nickel, Ti, niobium, vanadium, iron, W, Re, Ta, Mo, Niobium and Nb (94.33 wt%)-Mo (4.86 wt%)-Zr (0.81 wt%)). 如請求項6之發電系統,其中該襯裡由結晶材料(例如,SiC、BN、石英)及/或諸如Nb、Ta、Mo或W中之至少一者的耐火金屬製成。The power generation system of claim 6, wherein the lining is made of a crystalline material (eg, SiC, BN, quartz) and/or a refractory metal such as at least one of Nb, Ta, Mo, or W. 如請求項1至7中任一項之發電系統,其中該第二電漿形成於反應單元中,其中反應單元腔室之該等壁包含第一區段及第二區段, 該第一區段由不鏽鋼,諸如347 SS,諸如4130合金SS或Cr-Mo SS、鎳、Ti、鈮、釩、鐵、W、Re、Ta、Mo、鈮及Nb(94.33 wt%)-Mo(4.86 wt%)-Zr(0.81 wt%)構成; 該第二區段包含與該第一區段中之金屬不同的耐火金屬; 其中不同金屬之間的接頭藉由層壓材料(例如,諸如BN之陶瓷)形成。The power generation system of any one of claims 1 to 7, wherein the second plasma is formed in a reaction unit, wherein the walls of the reaction unit chamber comprise a first section and a second section, The first section is made of stainless steel, such as 347 SS, such as 4130 alloy SS or Cr-Mo SS, nickel, Ti, niobium, vanadium, iron, W, Re, Ta, Mo, niobium and Nb (94.33 wt%)-Mo (4.86 wt%)-Zr (0.81 wt%) composition; the second section comprises a different refractory metal than the metal in the first section; Wherein the joints between dissimilar metals are formed by laminated materials (eg, ceramics such as BN). 一種產生電能及熱能中之至少一者的電力系統,其包含: 至少一個容器,其能夠保持低於大氣壓之壓力; 反應物,其能夠經歷產生足夠能量以在該容器中形成電漿之反應,該等反應物包含: a)  氫氣與氧氣之混合物,及/或 水蒸汽,及/或 氫氣與水蒸汽之混合物; b)  熔融金屬; 質量流量控制器,其用以控制至少一種反應物至該容器中之流動速率; 真空泵,其用以在一或多種反應物流入該容器中時將該容器中之該壓力保持為低於大氣壓力; 熔融金屬噴射器系統,其包含含有該熔融金屬中之一些的至少一個儲集器、經結構設計以傳送該儲集器中之該熔融金屬且經由噴射器管提供熔融金屬流之熔融金屬泵系統(例如,一或多個電磁泵),及用於接收該熔融金屬流之至少一個非噴射器熔融金屬儲集器; 至少一個點火系統,其包含電力或點火電流源,以向至少一個熔融金屬流供應電力,從而在該氫氣及/或氧氣及/或水蒸汽流入該容器中時點火該反應; 反應物供應系統,其用以補充該反應中消耗之反應物; 功率轉換器或輸出系統,其用以將該反應產生之該能量的一部分(例如,自該電漿輸出之光、電漿射流及/或熱)轉換成電力及/或熱功率。A power system for generating at least one of electrical energy and thermal energy, comprising: at least one container capable of maintaining sub-atmospheric pressure; reactants capable of undergoing reactions that generate sufficient energy to form a plasma in the vessel, the reactants comprising: a) A mixture of hydrogen and oxygen, and/or water vapor, and/or A mixture of hydrogen and water vapor; b) molten metal; a mass flow controller for controlling the flow rate of at least one reactant into the vessel; a vacuum pump for maintaining the pressure in the vessel below atmospheric pressure as one or more reactants flow into the vessel; A molten metal injector system comprising at least one reservoir containing some of the molten metal, a molten metal pump system structured to deliver the molten metal in the reservoir and provide a flow of molten metal through an injector tube (eg, one or more electromagnetic pumps), and at least one non-ejector molten metal reservoir for receiving the molten metal stream; at least one ignition system comprising a source of electrical power or ignition current to supply electrical power to at least one molten metal stream to ignite the reaction when the hydrogen and/or oxygen and/or water vapor flows into the vessel; A reactant supply system for replenishing the reactants consumed in the reaction; A power converter or output system for converting a portion of the energy generated by the reaction (eg, light, plasma jet and/or heat output from the plasma) into electrical and/or thermal power. 如請求項9之電力系統,其進一步包含用於混合該氫氣與該氧氣及/或水分子之氣體混合器,及氫氧再結合器及/或氫解離劑。The power system of claim 9, further comprising a gas mixer for mixing the hydrogen with the oxygen and/or water molecules, and a hydrogen-oxygen recombiner and/or a hydrogen dissociator. 如請求項10之電力系統,其中該氫氧再結合器包含電漿單元。The power system of claim 10, wherein the oxyhydrogen recombiner comprises a plasma cell. 如請求項11之電力系統,其中該電漿單元包含中心正電極及接地管體相對電極,其中跨越該等電極施加電壓(例如,在50 V至1000 V之範圍內的電壓),以誘發自氫氣(H2 )及氧氣(O2 )氣體混合物形成電漿。The power system of claim 11, wherein the plasma cell includes a central positive electrode and a grounded tube opposite electrode, wherein a voltage (eg, a voltage in the range of 50 V to 1000 V) is applied across the electrodes to induce self- The hydrogen (H 2 ) and oxygen (O 2 ) gas mixture forms a plasma. 如請求項10之電力系統,其中該氫氧再結合器包含由惰性載體材料負載之再結合器催化性金屬。The power system of claim 10, wherein the oxyhydrogen recombiner comprises a recombiner catalytic metal supported by an inert support material. 如請求項1或11至13中任一項之電力系統,其中供應至該電漿產生單元以產生該第一電漿之該氣體混合物包含非化學計量H2 /O2 混合物(例如,以該混合物之莫耳百分比計,具有小於1/3莫耳%的O2 或0.01%至30%或0.1%至20%,或小於10%,或小於5%,或小於3%之O2 的H2 /O2 混合物),其流過該電漿單元(例如,輝光放電單元)以產生能夠以足夠的放熱進行該反應以產生該第二電漿的反應混合物。The power system of any one of claims 1 or 11 to 13, wherein the gas mixture supplied to the plasma generating unit to generate the first plasma comprises a non-stoichiometric H 2 /O 2 mixture (eg, in the mixtures mole percentage, having less than 1/3 O 2 mole% or from 0.01 to 30% or from 0.1% to 20%, or less than 10%, or less than 5%, or less than 3% of H 2 O is 2 /O 2 mixture), which flows through the plasma cell (eg, glow discharge cell) to produce a reaction mixture capable of proceeding the reaction with sufficient exotherm to produce the second plasma. 如請求項14之電力系統,其中該非化學計量H2 /O2 混合物通過輝光放電以產生原子氫及初生H2 O之流出物(例如,具有一定濃度之水且具有足以防止氫鍵形成之內能的混合物); 輝光放電流出物經引導至反應腔室中,其中點火電流供應於兩個電極之間(例如,其中熔融金屬穿過其間),且 在該流出物與偏壓熔融金屬(例如,鎵)發生相互作用時,該初生水與該原子氫之間的該反應例如在電弧電流形成時經誘發。The power system of claim 14, wherein the non-stoichiometric H 2 /O 2 mixture is glow-discharged to produce an effluent of atomic hydrogen and nascent H 2 O (eg, water at a concentration and with an amount sufficient to prevent hydrogen bond formation) a mixture of energy); a glow discharge effluent is directed into a reaction chamber, where an ignition current is supplied between two electrodes (eg, with molten metal passing therethrough), and where the effluent is connected to a biased molten metal (eg, , gallium) interacts, the reaction between the nascent water and the atomic hydrogen is induced, for example, when an arc current is formed. 如請求項15之電力系統,其中該反應腔室及儲集器中之至少一者包含對與該熔融金屬形成合金具有抗性的至少一種耐火材料襯裡。The power system of claim 15, wherein at least one of the reaction chamber and the reservoir includes at least one refractory lining resistant to alloying with the molten metal. 如請求項16之電力系統,其中該反應腔室之內壁包含陶瓷塗層、襯有W、Nb或Mo襯裡之碳襯裡、襯有W板。The power system of claim 16, wherein the inner wall of the reaction chamber comprises a ceramic coating, a carbon lining lined with W, Nb or Mo lining, a W plate lined. 16或17之電力系統,其中該儲集器包含碳襯裡且碳由其中所含之該熔融金屬覆蓋。The power system of 16 or 17, wherein the reservoir comprises a carbon lining and carbon is covered by the molten metal contained therein. 如請求項15至18中任一項之電力系統,其中反應腔室壁包含對反應產物氣體高度可滲透之材料。The power system of any one of claims 15 to 18, wherein the reaction chamber walls comprise a material that is highly permeable to reaction product gases. 如請求項16之電力系統,其中反應腔室壁包含不鏽鋼(例如,Mo-Cr不鏽鋼)、鈮、鉬或鎢中之至少一者。The power system of claim 16, wherein the reaction chamber wall comprises at least one of stainless steel (eg, Mo-Cr stainless steel), niobium, molybdenum, or tungsten. 一種電力系統,其包含 a.)容器,其能夠保持低於大氣壓之壓力,該容器包含反應腔室; b)複數個電極對,每一對包含經結構設計以允許熔融金屬在其間流動以完成電路的電極; c)電源,其連接至該兩個電極以在該電路關閉時在該兩個電極間施加電流; d)電漿產生單元(例如,輝光放電單元),其用以誘發自氣體形成第一電漿;其中該電漿產生單元之流出物經引向該電路(例如,該熔融金屬、陽極、陰極、浸沒於熔融金屬儲集器中之電極); 其中在跨越該電路施加電流時,該電漿產生單元之該流出物經歷反應以產生第二電漿及反應產物;及 e)電源適配器,其經結構設計以將來自該第二電漿之能量轉換及/或傳遞成機械能、熱能及/或電能; 其中該等反應產物(例如,中間物、最終產物)中之至少一者具有如本文中所描述之至少一個光譜特徵(例如,如實例10中所示)。A power system that includes a.) a vessel capable of maintaining a pressure below atmospheric pressure, the vessel comprising the reaction chamber; b) a plurality of electrode pairs, each pair comprising electrodes structured to allow molten metal to flow therebetween to complete an electrical circuit; c) a power supply connected to the two electrodes to apply current between the two electrodes when the circuit is closed; d) a plasma generating unit (eg, glow discharge unit) for inducing the formation of a first plasma from a gas; wherein the effluent of the plasma generating unit is directed to the electrical circuit (eg, the molten metal, anode, cathode , electrodes immersed in a molten metal reservoir); wherein upon application of current across the circuit, the effluent of the plasma generating unit undergoes a reaction to generate a second plasma and a reaction product; and e) a power adapter structured to convert and/or transfer the energy from the second plasma into mechanical, thermal and/or electrical energy; wherein at least one of the reaction products (eg, intermediates, final products) has at least one spectral feature as described herein (eg, as shown in Example 10). 如請求項1至21中任一項之電力系統,其中惰性氣體(例如,氬氣)經噴射至該容器中。The power system of any one of claims 1 to 21, wherein an inert gas (eg, argon) is injected into the vessel. 如請求項9至22中任一項之電力系統,其進一步包含微型噴水器,該微型噴水器經結構設計以將水噴射至該容器中(例如,產生包含可例如經氫鍵結之水蒸汽或非初生水蒸汽的電漿)。The power system of any one of claims 9 to 22, further comprising a micro-sprinkler structured to spray water into the vessel (eg, to generate water vapor comprising water that may be, for example, hydrogen-bonded) or plasma with non-nascent water vapor). 如請求項9至23中任一項之電力系統,其中熔融金屬噴射系統進一步包含該熔融金屬儲集器及非噴射熔融金屬儲集器中之電極;且該點火系統包含用以向該噴射器及非噴射器儲集器電極供應相對電壓之電力或點火電流源;其中該電力源經由該熔融金屬流供應電流及功率流以引起該等反應物之該反應,從而在該容器內部形成電漿。The power system of any one of claims 9 to 23, wherein the molten metal injection system further comprises electrodes in the molten metal reservoir and the non-injected molten metal reservoir; and the ignition system comprises a means for injecting the injector and non-injector reservoir electrodes supply a source of electrical power or ignition current of relative voltage; wherein the electrical power source supplies current and power flow through the molten metal stream to cause the reaction of the reactants to form a plasma inside the vessel . 如請求項9至24中任一項之電力系統,其中該熔融金屬泵系統包含或為一或多個電磁泵,且每一電磁泵包含以下類型中之一者: a) DC或AC導電型,其包含經由電極供應至該熔融金屬之DC或AC電流源及恆定或同相交變向量交叉磁場源,或 b) 感應型,其包含穿過熔融金屬之短路迴路之交變磁場源,其在該金屬中誘發交流電;及同相交變向量交叉磁場源。The power system of any one of claims 9 to 24, wherein the molten metal pump system comprises or is one or more electromagnetic pumps, and each electromagnetic pump comprises one of the following types: a) DC or AC conductivity type comprising a source of DC or AC current supplied to the molten metal via electrodes and a source of constant or in-phase alternating vector crossed magnetic fields, or b) Inductive type, which comprises a source of alternating magnetic field through a short circuit of molten metal, which induces an alternating current in the metal; and a source of in-phase alternating vector crossed magnetic field. 如請求項25之電力系統,其中該恆定或同相交變向量交叉磁場源為至少一個永久性或電磁體。The power system of claim 25, wherein the constant or in-phase alternating vector cross magnetic field source is at least one permanent or electromagnet. 如請求項9至26中任一項之電力系統,其中該熔融金屬泵系統(或該熔融金屬泵系統之電磁泵)包含泵管,該泵管包含材料或襯有抵抗鎵合金形成之材料。The power system of any one of claims 9 to 26, wherein the molten metal pump system (or the electromagnetic pump of the molten metal pump system) comprises a pump tube comprising or lined with a material resistant to gallium alloy formation. 如請求項27之電力系統,其中該材料或襯裡包含W、Mo、Ta、BN、碳、石英、SiC或另一陶瓷。The power system of claim 27, wherein the material or lining comprises W, Mo, Ta, BN, carbon, quartz, SiC, or another ceramic. 如請求項1之電力系統,其中噴射器儲集器包含與其中的該熔融金屬接觸之電極,且非噴射器儲集器包含接觸藉由噴射器系統提供之該熔融金屬的電極。The power system of claim 1 wherein the injector reservoir includes electrodes in contact with the molten metal therein, and the non-injector reservoir includes electrodes in contact with the molten metal provided by the injector system. 如請求項9至29中任一項之電力系統,其中該非噴射器儲集器對準於該噴射器上方(例如,與該噴射器豎直對準),且該噴射器經結構設計以產生朝向該非噴射器儲集器定向之該熔融流,使得來自該熔融金屬流之熔融金屬可收集在該儲集器中且該熔融金屬流與該非噴射器儲集器電極電接觸;且其中該熔融金屬彙集在該非噴射器儲集器電極上。The power system of any one of claims 9 to 29, wherein the non-injector reservoir is aligned above the injector (eg, vertically aligned with the injector), and the injector is structured to produce orienting the molten metal stream toward the non-injector reservoir such that molten metal from the molten metal stream can collect in the reservoir and the molten metal stream is in electrical contact with the non-injector reservoir electrode; and wherein the molten metal Metal collects on the non-injector reservoir electrode. 如請求項9至30中任一項之電力系統,其中該熔融金屬與水反應以形成原子氫(例如,在操作期間)。The power system of any one of claims 9 to 30, wherein the molten metal reacts with water to form atomic hydrogen (eg, during operation). 如請求項1至31中任一項之電力系統,其中該熔融金屬為鎵,且該電力系統進一步包含用以自氧化鎵(例如,該反應中產生之氧化鎵)再生鎵之鎵再生系統。The power system of any one of claims 1 to 31, wherein the molten metal is gallium, and the power system further comprises a gallium regeneration system for regenerating gallium from gallium oxide (eg, gallium oxide produced in the reaction). 如請求項1至32中任一項之電力系統,其中反應腔室壓力藉由該真空泵保持為低於25托。The power system of any one of claims 1 to 32, wherein the reaction chamber pressure is maintained below 25 Torr by the vacuum pump. 如請求項1至33中任一項之電力系統,其進一步包含冷凝器以冷凝熔融金屬蒸汽以及金屬氧化物粒子及蒸汽並將其返回至該反應單元腔室。The power system of any one of claims 1 to 33, further comprising a condenser to condense and return molten metal vapor and metal oxide particles and vapor to the reaction unit chamber. 如請求項34之電力系統,其進一步包含真空管線,其中該冷凝器包含該真空管線的自該反應單元腔室至相對於該反應單元腔室豎直的該真空泵之區段,且包含惰性高表面積填充物材料,該填充物材料冷凝該熔融金屬蒸汽以及金屬氧化物粒子及蒸汽並將其返回至該反應單元腔室,同時允許該真空泵保持該反應單元腔室中的真空壓力。The power system of claim 34, further comprising a vacuum line, wherein the condenser includes a section of the vacuum line from the reaction unit chamber to the vacuum pump vertical relative to the reaction unit chamber, and includes a high inertness surface area filler material that condenses and returns the molten metal vapor and metal oxide particles and vapors to the reaction unit chamber while allowing the vacuum pump to maintain vacuum pressure in the reaction unit chamber. 如請求項1至36中任一項之電力系統,其中該容器包含將光自該容器之該內部透射至光伏打轉換器之透光光伏打(PV)窗,以及容器幾何形狀及包含自旋窗之至少一個擋扳中之至少一者。The power system of any one of claims 1 to 36, wherein the container includes a light-transmitting photovoltaic (PV) window that transmits light from the interior of the container to a photovoltaic converter, and the container geometry and includes a spin At least one of at least one stopper of the window. 如請求項36之電力系統,其中正點火電極(例如,頂部點火電極、移位於另一電極上方之電極)較接近該窗(例如,相比於負點火電極),且該正電極經由該光伏打向該光伏打轉換器發射黑體輻射。The power system of claim 36, wherein a positive firing electrode (eg, a top firing electrode, an electrode displaced above another electrode) is closer to the window (eg, than a negative firing electrode), and the positive electrode passes through the The photovoltaics emit black body radiation towards the photovoltaic converter. 如請求項1至37中任一項之電力系統,其中該功率轉換器或輸出系統為磁流體動力轉換器,該磁流體動力轉換器包含連接至該容器之噴嘴、磁流體動力通道、電極、磁體、金屬收集系統、金屬再循環系統、熱交換器及視情況選用之氣體再循環系統。The power system of any one of claims 1 to 37, wherein the power converter or output system is a magnetohydrodynamic converter, the magnetohydrodynamic converter comprising a nozzle connected to the container, a magnetohydrodynamic channel, an electrode, Magnets, metal collection system, metal recirculation system, heat exchanger and optional gas recirculation system. 如請求項9至38中任一項之電力系統,其中該熔融金屬泵系統包含第一級電磁泵及第二級電磁泵,其中該第一級包含用於金屬再循環系統之泵,且該第二級包含該金屬噴射器系統之該泵。The power system of any one of claims 9 to 38, wherein the molten metal pump system includes a first-stage electromagnetic pump and a second-stage electromagnetic pump, wherein the first stage includes a pump for a metal recirculation system, and the The second stage contains the pump of the metal injector system. 如請求項1至39中任一項之電力系統,其進一步包含熱交換器,該熱交換器包含(i)板式、(ii)殼內塊式、(iii)SiC環形凹槽式、(iv)SiC組合式及(v)殼管式熱交換器中之一者。The power system of any one of claims 1 to 39, further comprising a heat exchanger comprising (i) a plate type, (ii) a block-in-shell type, (iii) a SiC annular groove type, (iv) ) SiC combination type and (v) one of shell and tube heat exchangers. 如請求項40之電力系統,進一步其中該殼管式熱交換器包含導管、歧管、分配器、熱交換器入口管線、熱交換器出口管線、外殼、外部冷卻劑入口、外部冷卻劑出口、擋板、用以使來自該儲集器之熱熔融金屬再循環通過該熱交換器且將冷熔融金屬返回至該儲集器的至少一個泵,及一或多個水泵及水冷卻劑或一或多個空氣鼓風機及空氣冷卻劑,其用以使冷的冷卻劑流過該外部冷卻劑入口及該外殼,其中該冷卻劑藉由來自該等導管之熱傳遞而經加熱且離開該外部冷卻劑出口。The power system of claim 40, further wherein the shell and tube heat exchanger comprises conduits, manifolds, distributors, heat exchanger inlet lines, heat exchanger outlet lines, enclosures, external coolant inlets, external coolant outlets, baffles, at least one pump to recirculate hot molten metal from the reservoir through the heat exchanger and return cold molten metal to the reservoir, and one or more water pumps and water coolant or a or more air blowers and air coolant for flowing cold coolant through the external coolant inlet and the housing, wherein the coolant is heated by heat transfer from the conduits and exits the external cooling agent export. 如請求項41之電力系統,其中該殼管式熱交換器包含導管、歧管、分配器、熱交換器入口管線及熱交換器出口管線,該出口管線包含襯裡的碳,且獨立於導管、歧管、分配器、熱交換器入口管線、熱交換器出口管線、外殼、外部冷卻劑入口、外部冷卻劑出口及包含不鏽鋼之擋板擴展。The power system of claim 41, wherein the shell and tube heat exchanger comprises conduits, manifolds, distributors, heat exchanger inlet lines, and heat exchanger outlet lines, the outlet lines comprising lined carbon and independent of the conduits, Manifold, distributor, heat exchanger inlet line, heat exchanger outlet line, housing, external coolant inlet, external coolant outlet, and baffle extensions comprising stainless steel. 如請求項41或42之電力系統,其中該熱交換器之外部冷卻劑包含空氣,且來自微型渦輪壓縮機或微型渦輪復熱器之空氣迫使冷空氣通過該外部冷卻劑入口及外殼,其中該冷卻劑藉由來自該等導管之熱傳遞而經加熱且離開該外部冷卻劑出口,且自該外部冷卻劑出口輸出之熱冷卻劑流入微型渦輪機中以將熱功率轉換成電力。The power system of claim 41 or 42, wherein the external coolant of the heat exchanger comprises air, and air from a micro-turbo compressor or micro-turbo regenerator forces cool air through the external coolant inlet and housing, wherein the The coolant is heated by heat transfer from the conduits and exits the external coolant outlet, and the hot coolant output from the external coolant outlet flows into a microturbine to convert thermal power into electricity. 如請求項1至43中任一項之電力系統,其中該反應產生表徵為以下各者中的一或多者之氫產物: a)分子氫產物H2 (例如,H2 (1/p) (p為大於1且小於或等於137之整數),其包含未配對電子),其產生電子順磁共振(EPR)光譜分析信號; b)具有EPR光譜之分子氫產物H2 (例如,H2 (1/4)),該EPR光譜包含具有2.0046386之g因數的主峰值,該主峰值視情況分裂成一系列成對峰值,其成員藉由自旋軌道耦合能量分離,該等自旋軌道耦合能量為對應電子自旋軌道耦合量子數之函數,其中 (i)未配對電子磁矩基於H2 (1/4)之反磁磁化率在H2 (1/4)分子軌道之配對電子中誘發反磁矩; (ii)固有配對-未配對電流相互作用之對應磁矩及由於圍繞核間軸之相對旋轉運動的磁矩產生該等自旋軌道耦合能量; (iii)將每一自旋軌道分裂峰值進一步細分成匹配整數磁通軌跡能量之一系列等間隔之峰值,該等整數磁通軌跡能量為對應於躍遷中涉及之角動量分量之數目的電子磁通軌跡量子數之函數,且 (iv)另外,由於磁能隨著該分子軌道累積的磁鏈增大,自旋軌道分裂隨著該系列成對峰值的低場側上之自旋軌道耦合量子數而增大; c)對於9.820295 GHz之EPR頻率,(i) 由於由該磁能及H2 (1/4)之該自旋軌道耦合能量引起之組合位移的低場峰值位置
Figure 03_image945
Figure 03_image947
; (ii)具有經量化自旋軌道分裂能量
Figure 03_image949
及電子自旋軌道耦合量子數
Figure 03_image951
之高場峰值位置
Figure 03_image953
Figure 03_image955
,及(iii)對於電子磁通軌跡量子數
Figure 03_image957
,在每一自旋軌道峰值位置處之整數系列個峰值的間隔
Figure 03_image959
Figure 03_image961
Figure 03_image963
; d)氫陰離子H- (例如,H- (1/p)),其包含共同原子軌道中之配對及未配對電子,該電子藉由400至410 nm範圍內之高解析度可見光光譜分析以H- (1/2)上觀測到的h/2e之量化單位展現磁鏈; e)磁鏈,其以在H2 (1/4)之旋轉能階藉由在拉曼光譜分析期間之雷射輻射且藉由來自電子束之高能量電子與H2 (1/4)之碰撞而激發時所觀測到的h/2e之量化單位為單位; f)分子低能量氫(例如,H2 (1/p)),其具有該未配對電子之自旋磁矩與由於分子旋轉之軌道磁矩之間的自旋軌道耦合之拉曼光譜躍遷,其中(i)旋轉躍遷之能量藉由此等自旋軌道耦合能量隨該等對應電子自旋軌道耦合量子數變化而位移;(ii)藉由自旋軌道能量位移之分子旋轉峰值藉由磁通鏈能量進一步位移,其中每一能量對應於其電子磁通軌跡量子數,視該旋轉躍遷中所涉及之角動量分量的該數目而定,及(iii)所觀測到的拉曼光譜峰值之子分裂或位移係由於以自旋磁矩與分子旋轉磁矩之間的該自旋軌道耦合期間之磁通量量子h/2e為單位的磁鏈,同時發生該旋轉躍遷; g)具有拉曼光譜躍遷之H2 (1/4),其包含(i)具有自旋軌道耦合及磁通軌跡耦合之純
Figure 03_image965
Figure 03_image967
旋轉躍遷:
Figure 03_image969
,(ii)包含
Figure 03_image971
Figure 03_image973
旋轉躍遷與
Figure 03_image975
Figure 03_image977
自旋旋轉躍遷之協同躍遷:
Figure 03_image979
,或(iii)雙躍遷,最終旋轉量子數
Figure 03_image981
Figure 03_image983
Figure 03_image985
,其中在該等純、協同及雙躍遷中亦觀測到對應自旋軌道耦合及磁通軌跡耦合; h)H2 (1/4) UV拉曼峰值(例如,如在複合GaOOH:H2 (1/4):H2 O及Ni箔上所記錄,其曝露於在12,250至15,000 cm- 1 區中所觀測到之反應電漿,其中線匹配協同純旋轉躍遷
Figure 03_image987
Figure 03_image989
自旋躍遷以及自旋軌道耦合及磁通鏈分裂:
Figure 03_image991
; i)HD(1/4)拉曼光譜之旋轉能量相對於H2 (1/4)之旋轉能量位移¾倍; j)該HD(1/4)拉曼光譜之該等旋轉能量匹配以下彼等者:(i)具有自旋軌道耦合及磁通軌跡耦合之純HD(1/4)
Figure 03_image993
Figure 03_image995
旋轉躍遷:
Figure 03_image997
,(ii)包含該等
Figure 03_image999
Figure 03_image1001
旋轉躍遷與該等
Figure 03_image1003
Figure 03_image1005
自旋旋轉躍遷之該等協同躍遷:
Figure 03_image1007
,或(iii)該雙躍遷,最終旋轉量子數
Figure 03_image1009
Figure 03_image1011
Figure 03_image1013
Figure 03_image1015
,其中在該純及協同躍遷兩者中亦觀測到自旋軌道耦合及磁通軌跡耦合; k)用電子束之高能量電子輻照之H2 (1/4)-稀有氣體混合物在紫外(150至180 nm)區中展示相等的0.25 eV間隔的譜線發射,其具有在8.25 eV下之截止值,該截止值匹配H2 (1/4)
Figure 03_image1017
Figure 03_image1019
振動躍遷,其中一系列旋轉躍遷對應於H2 (1/4) P分支,其中(i)光譜擬合良好地匹配
Figure 03_image1021
Figure 03_image1023
;其中0.515 eV及0.01509 eV分別為普通分子氫之振動及旋轉能量;(ii)觀測到匹配亦藉由拉曼光譜分析觀測到之旋轉自旋軌道分裂能量的小型衛星線,且(iii)旋轉自旋軌道分裂能量間隔匹配
Figure 03_image1025
,其中1.5涉及
Figure 03_image1027
Figure 03_image1029
分裂; l)藉由在KCl結晶基質中捕集之H2 (1/4)之電子束激發觀測到H2 (1/4) P分支旋轉躍遷與
Figure 03_image1031
Figure 03_image1033
振動躍遷之光譜發射,其中(i)該等旋轉峰值匹配自由轉子之峰值;(ii)由於H2 (1/4)之振動與該KCl基質之相互作用,振動能藉由有效質量之增大而位移;(iii)該光譜擬合良好地匹配
Figure 03_image1035
Figure 03_image1037
,其包含以0.25 eV間隔之峰值,且(iv)H2 (1/4)振動能移之相對量值匹配由KCl中捕集之普通H2 引起的對振轉光譜之相對效應; m)具有HeCd能量雷射之該拉曼光譜展示在8000 cm- 1 至18,000 cm- 1 區中間隔之一系列1000 cm- 1 (0.1234 eV)等能量,其中將該拉曼光譜轉換成螢光或光致發光光譜將匹配揭露為在KCl基質中對應於H2 (1/4)之電子束激發發射光譜的H2 (1/4)之二階振轉光譜,其由
Figure 03_image095
Figure 03_image097
給出且包含0.25 eV能量間隔旋轉躍遷峰值下之基質位移
Figure 03_image099
Figure 03_image101
旋轉躍遷; n)在高於4400 cm- 1 之能量範圍中觀測到H2 (1/4)之紅外旋轉躍遷,其中除了固有磁場以外,強度隨施加磁場而增大,且亦觀測到旋轉躍遷與自旋軌道躍遷耦合; o)藉由X射線光電子光譜分析(XPS)觀測到H2 (1/4)藉由對應於496 eV之總能量之康普頓效應的所允許雙重電離; p)藉由氣相層析法觀測到H2 (1/4),考慮到氫氣及氦氣具有最快的先前已知遷移速率及對應最短滯留時間,其展示比任何已知氣體之遷移速率更快的遷移速率; q)極紫外線(EUV)光譜分析記錄具有10.1 nm截止值(例如,如對應於藉由初生HOH催化劑催化之低能量氫反應躍遷H至H(1/4))之極紫外線連續輻射; r)質子魔角自旋核磁共振光譜分析(1 H MAS NMR)記錄-4 ppm至-5 ppm區中之高場基質水峰; s)當複數個氫產物分子之磁矩協作性地相互作用時,諸如順磁性、超順磁性及甚至鐵磁性之體磁性,其中超順磁性(例如,如使用振動樣品磁力計量測包含反應產物之化合物之磁化率所觀測到); t)記錄於曝露於來自該等反應產物之分子氣體源的K2 CO3 及KOH上之飛行時間次級離子質譜分析(ToF-SIMS)及電噴灑飛行時間次級離子質譜分析(ESI-ToF),其藉由M+2多聚體單元之獨特觀測結果(例如,
Figure 03_image1042
Figure 03_image1044
,其中n為整數)及由於氫陰離子之穩定性的密集
Figure 03_image1046
峰值展示反應產物(例如,H2 (1/4)氣體)至包含氧陰離子之無機化合物的複合,及 u)由分子氫核組成之反應產物表現得如有機分子,如藉由分段成無機離子之有機分子基質柱上之層析峰值所證明。
The power system of any one of claims 1 to 43, wherein the reaction produces a hydrogen product characterized by one or more of: a) a molecular hydrogen product H 2 (eg, H 2 (1/p) (p is greater than 1 and less than or equal to the integer 137), comprising unpaired electrons), that generates electron paramagnetic resonance (EPR) spectroscopy signal; b) having a molecular EPR spectrum of the hydrogen product H 2 (e.g., H 2 (1/4)), the EPR spectrum contains a main peak with a g-factor of 2.0046386, which is optionally split into a series of paired peaks, the members of which are separated by spin-orbit coupling energies, which spin-orbit coupling energies corresponding function of the number of electron quantum spin-orbit coupling, wherein (i) an unpaired electron magnetic moment based on H 2 (1/4) of the unpaired electron in the diamagnetic susceptibility of H 2 (1/4) of molecular orbital induce trans the magnetic moments; (ii) the corresponding magnetic moments of the intrinsic paired-unpaired current interactions and the magnetic moments due to relative rotational motion around the internuclear axis to generate these spin-orbit coupling energies; (iii) split each spin-orbit The peaks are further subdivided into a series of equally spaced peaks matching one of the integer flux track energies as a function of the electron flux track quantum number corresponding to the number of angular momentum components involved in the transition, and (iv ) Additionally, since the magnetic energy increases with the flux linkage accumulated by the molecular orbital, the spin-orbit splitting increases with the spin-orbit coupling quantum number on the low-field side of the series of paired peaks; c) For a period of 9.820295 GHz EPR frequency, (i) low-field peak position due to combined displacement caused by the magnetic energy and the spin-orbit coupling energy of H 2 (1/4)
Figure 03_image945
for
Figure 03_image947
; (ii) has a quantized spin-orbit splitting energy
Figure 03_image949
and electron spin-orbit coupling quantum numbers
Figure 03_image951
high field peak position
Figure 03_image953
for
Figure 03_image955
, and (iii) for the electron flux trajectory quantum number
Figure 03_image957
, the interval of an integer series of peaks at each spin-orbit peak position
Figure 03_image959
for
Figure 03_image961
and
Figure 03_image963
d) The hydride ion H (eg, H (1/p)), which contains paired and unpaired electrons in a common atomic orbital, which are analyzed by high-resolution visible light spectroscopy in the range of 400 to 410 nm. The quantified units of h/2e observed at H (1/2) exhibit the flux linkage; e) the flux linkage at the rotational energy level at H 2 (1/4) by lightning during Raman spectroscopy analysis when the incident radiation and by high energy electron beams from electron collisions with H 2 (1/4) of the excited observed quantization unit h / 2e of the units; F) a low energy hydrogen molecules (e.g., H 2 ( 1/p)), which has a Raman spectral transition due to the spin-orbit coupling between the spin magnetic moment of the unpaired electron and the orbital magnetic moment due to molecular rotation, where (i) the energy of the spin transition is determined by such The spin-orbit coupling energy is shifted as a function of the corresponding electron spin-orbit coupling quantum numbers; (ii) the molecular rotation peaks shifted by the spin-orbit energy are further shifted by the flux linkage energy, where each energy corresponds to its The quantum number of electron flux trajectories, depending on the number of angular momentum components involved in the rotational transition, and (iii) the observed sub-splitting or displacement of the Raman spectral peak due to spin magnetic moment and molecular rotation the magnetic flux quantum h during the spin-orbit coupling between the magnetic moment / 2e is the unit of magnetic flux, while the rotary transition occurs; G) having a transition of the Raman spectrum H 2 (1/4), which comprises (i) Pure with spin-orbit coupling and flux-track coupling
Figure 03_image965
to
Figure 03_image967
Rotational transition:
Figure 03_image969
, (ii) contains
Figure 03_image971
to
Figure 03_image973
rotational transition and
Figure 03_image975
to
Figure 03_image977
Synergistic transition of spin spin transition:
Figure 03_image979
, or (iii) double transition, the final spin quantum number
Figure 03_image981
and
Figure 03_image983
:
Figure 03_image985
, where the corresponding spin-orbit coupling and flux-track coupling are also observed in these pure, cooperative, and double transitions; h)H 2 (1/4) UV Raman peaks (eg, as in the composite GaOOH:H 2 ( 1/4): Recorded on H 2 O and Ni foils exposed to the reactive plasma observed in the 12,250 to 15,000 cm 1 region with line matching in concert with pure rotational transitions
Figure 03_image987
and
Figure 03_image989
Spin transition and spin-orbit coupling and flux chain splitting:
Figure 03_image991
; Rotational energy (1/4) of the Raman spectra I) HD with respect to H 2 (1/4) of the rotational displacement energy ¾ times; J) such that the HD (1/4) of the rotational energy of the Raman spectrum to match the following Those: (i) Pure HD(1/4) with spin-orbit coupling and flux-track coupling
Figure 03_image993
to
Figure 03_image995
Rotational transition:
Figure 03_image997
, (ii) including such
Figure 03_image999
to
Figure 03_image1001
rotational transitions and such
Figure 03_image1003
to
Figure 03_image1005
These co-transitions of spin-spin transitions:
Figure 03_image1007
, or (iii) the double transition, which ultimately rotates the quantum number
Figure 03_image1009
;
Figure 03_image1011
:
Figure 03_image1013
Figure 03_image1015
, where spin-orbit coupling and flux-track coupling are also observed in both the pure and cooperative transitions; k) H 2 (1/4)-noble gas mixture irradiated with high-energy electrons of an electron beam in the ultraviolet ( 150 to 180 nm) in the region of 0.25 eV spectral line display interval equal emission having a cutoff value of 8.25 eV at the cutoff value matches H 2 (1/4)
Figure 03_image1017
to
Figure 03_image1019
Vibrational transition, wherein the transition corresponding to the rotation range of H 2 (1/4) P branch, wherein (i) spectral fitting well matched
Figure 03_image1021
;
Figure 03_image1023
; where 0.515 eV and 0.01509 eV are the vibrational and rotational energies of ordinary molecular hydrogen, respectively; (ii) a small satellite line was observed matching the rotational spin-orbit splitting energy also observed by Raman spectroscopy, and (iii) the rotational Spin-orbit splitting energy spacing matching
Figure 03_image1025
, of which 1.5 involves
Figure 03_image1027
and
Figure 03_image1029
split; l) The H 2 (1/4) P branch rotational transition was observed by electron beam excitation of H 2 (1/4) trapped in the KCl crystalline matrix with
Figure 03_image1031
to
Figure 03_image1033
The vibration spectral emission transition, wherein (i) those consisting of a rotor rotating Peak matching of the peak; (ii) because the effective mass of the vibration of the vibration can be increased H 2 (1/4) of the interaction matrix of the KCl by and shift; (iii) the spectral fit matches well
Figure 03_image1035
;
Figure 03_image1037
Which contains 0.25 eV peak interval, and (iv) H 2 (1/4) of the vibrational energy shift relative magnitude of the normal trap matching KCl H 2 in the relative effect of vibration caused by rotation of the spectrum; m) The Raman spectrum with a HeCd energy laser exhibits a series of 1000 cm - 1 (0.1234 eV) isoenergies in the 8000 cm- 1 to 18,000 cm - 1 region, where the Raman spectrum is converted to fluorescence or light the photoluminescence spectrum matched as disclosed KCl matrix corresponding to H 2 (1/4) of an electron beam excitation emission spectrum of H 2 (1/4) rotation of the second order vibration spectrum, consisting of
Figure 03_image095
;
Figure 03_image097
gives and includes the matrix displacement at the peak of the rotational transition at 0.25 eV energy interval
Figure 03_image099
to
Figure 03_image101
Rotational transitions; n) Infrared rotational transitions of H 2 (1/4) are observed in the energy range above 4400 cm − 1 , where in addition to the intrinsic magnetic field, the intensity increases with applied magnetic field, and rotational transitions are also observed Coupling with spin-orbit transitions; o) allowed double ionization of H 2 (1/4) by Compton effect corresponding to a total energy of 496 eV observed by X-ray photoelectron spectroscopy (XPS); p) observed by gas chromatography to H 2 (1/4), taking into hydrogen gas and helium gas having the fastest rate of migration of previously known and the corresponding minimum residence time, showing the migration rate faster than any known gases q) Extreme ultraviolet (EUV) spectroscopic analysis recorded an EUV continuum with a 10.1 nm cutoff (eg, as corresponding to the transition from H to H(1/4) in a low-energy hydrogen reaction catalyzed by a nascent HOH catalyst) Radiation; r) Proton Magic Angle Spin Nuclear Magnetic Resonance Spectroscopy ( 1 H MAS NMR) recording high-field matrix water peaks in the -4 ppm to -5 ppm region; s) When the magnetic moments of the plurality of hydrogen product molecules cooperate cooperatively On interactions, bulk magnetism such as paramagnetism, superparamagnetism, and even ferromagnetism, where superparamagnetism (eg, as observed using a vibrating sample magnetometer to measure the magnetic susceptibility of a compound containing a reaction product); t) record K to exposure to such molecules derived from the reaction product gas source 2 CO 3 and of the time of flight secondary ion mass spectrometry (ToF-SIMS) on the time of flight secondary ion mass spectrometry KOH analysis (ESI-ToF) and Electrospray which By unique observations of M+2 multimeric units (eg,
Figure 03_image1042
and
Figure 03_image1044
, where n is an integer) and the density due to the stability of hydride ions
Figure 03_image1046
The reaction product shows a peak (e.g., H 2 (1/4) gas) to a composite comprising an inorganic oxygen compound anions, and u) the reaction product of hydrogen molecules behave as a core composition of organic molecules, such as by segmented into inorganic As evidenced by the chromatographic peaks on the ionic organic molecular matrix column.
如請求項1至44中任一項之電力系統,其中該反應產生表徵為以下各者中之一或多者的高能特徵: (i)在包含H原子及初生HOH或H基催化劑之電漿,諸如氬氣-H2 、H2 及H2 O蒸汽電漿中具有超過100 eV之H巴耳麥a線的異常都卜勒譜線展寬,(ii)H激發態線反轉,(iii)異常H電漿餘輝持續時間,(iv)等效於約多10倍的莫耳之火藥的衝擊波傳播速度及對應壓力,其中僅約1%之功率該衝擊波耦合,(v)來自10 μl水合銀丸粒的高達20 MW之光功率,及(vi)如請求項1至44中任一項之電力系統之熱量測定,其中後者在340,000 W之功率位準下經驗證。The power system of any one of claims 1 to 44, wherein the reaction produces an energetic signature characterized by one or more of: (i) in a plasma comprising H atoms and nascent HOH or H-based catalysts , such as anomalous Doppler line broadening with H Barmer a-lines over 100 eV in argon-H 2 , H 2 and H 2 O vapor plasmas, (ii) H excited state line reversal, (iii) Anomalous H plasma afterglow duration, (iv) shock wave propagation velocity and corresponding pressure equivalent to about 10 times more molar powder, of which only about 1% of the power is coupled to the shock wave, (v) from 10 μl hydration Optical power of silver pellets up to 20 MW, and (vi) Calorimetry of a power system as claimed in any one of claims 1 to 44, wherein the latter is verified at a power level of 340,000 W. 一種電極系統,其包含: a)   第一電極及第二電極; b)   熔融金屬(例如,熔融銀、熔融鎵)流,其與該第一電極及該第二電極電接觸; c)   循環系統,其包含用以自儲集器汲取該熔融金屬且經由導管(例如,管)輸送其以產生離開該導管的該熔融金屬流之泵; d)   電力源,其經結構設計以提供該第一電極與該第二電極之間的電位差; 其中該熔融金屬流同時與該第一電極及該第二電極接觸以在該等電極之間產生電流。An electrode system comprising: a) The first electrode and the second electrode; b) a stream of molten metal (eg, molten silver, molten gallium) in electrical contact with the first electrode and the second electrode; c) a circulation system comprising a pump to draw the molten metal from a reservoir and deliver it through a conduit (eg, pipe) to generate the flow of the molten metal exiting the conduit; d) a power source structured to provide a potential difference between the first electrode and the second electrode; wherein the molten metal stream is in contact with the first electrode and the second electrode simultaneously to generate an electrical current between the electrodes. 一種電路,其包含: a)   加熱構件,其用於產生熔融金屬; b)   泵抽構件,其用於自儲集器經由導管輸送該熔融金屬以產生離開該導管之該熔融金屬流; c)   第一電極及第二電極,其與用於跨越該第一電極及該第二電極產生電位差的電源供應件電連通; 其中該熔融金屬流同時與該第一電極及該第二電極接觸以在該第一電極與該第二電極之間產生電路。A circuit comprising: a) heating means for producing molten metal; b) pumping means for transporting the molten metal from a reservoir through a conduit to generate the flow of the molten metal exiting the conduit; c) a first electrode and a second electrode in electrical communication with a power supply for generating a potential difference across the first electrode and the second electrode; Wherein the molten metal stream contacts both the first electrode and the second electrode to create an electrical circuit between the first electrode and the second electrode. 在包含第一電極及第二電極之電路中,改良包含使熔融金屬流穿過該等電極以允許電流在其間流動。In a circuit including a first electrode and a second electrode, the modification includes flowing molten metal through the electrodes to allow current to flow therebetween. 一種用於產生電漿之系統,其包含: a)     熔融金屬噴射器系統,其經結構設計以自金屬儲集器產生熔融金屬流; b)     電極系統,其用於誘發電流流過該熔融金屬流; c)     以下各者中之至少一者:(i)噴水系統,其經結構設計以使計量體積之水與熔融金屬接觸,其中該水的一部分及該熔融金屬之一部分發生反應以形成該金屬之氧化物及氫氣,(ii)過量氫氣與氧氣之混合物,及(iii)過量氫氣與水蒸汽之混合物,及 d)     電源供應器,其經結構設計以供應該電流; 其中當經由該金屬流供應電流時產生該電漿。A system for generating plasma comprising: a) a molten metal injector system constructed to produce a stream of molten metal from a metal reservoir; b) an electrode system for inducing a current to flow through the molten metal stream; c) At least one of the following: (i) a water spray system structured to contact a metered volume of water with molten metal, wherein a portion of the water and a portion of the molten metal react to form a portion of the metal oxides and hydrogen, (ii) a mixture of excess hydrogen and oxygen, and (iii) a mixture of excess hydrogen and water vapor, and d) a power supply which is constructed to supply the current; wherein the plasma is generated when current is supplied via the metal flow. 如請求項21之系統,其進一步包含: a)泵抽系統,其經結構設計以將在該電漿之該產生之後收集的金屬傳遞至該金屬儲集器;及 b)金屬再生系統,其經結構設計以收集該金屬氧化物且將該金屬氧化物轉換為該金屬;其中該金屬再生系統包含陽極、陰極、電解質;其中電偏壓係供應於該陽極與陰極之間以將該金屬氧化物轉換為該金屬; 其中在該金屬再生系統中再生之金屬經傳遞至該泵抽系統。The system of claim 21, further comprising: a) a pumping system structured to deliver metal collected after the generation of the plasma to the metal reservoir; and b) a metal regeneration system structured to collect the metal oxide and convert the metal oxide to the metal; wherein the metal regeneration system comprises an anode, a cathode, an electrolyte; wherein an electrical bias is supplied to the anode and cathode to convert the metal oxide into the metal; Wherein the metal regenerated in the metal regeneration system is passed to the pumping system. 一種用於產生電漿之系統,其包含: a)兩個電極,其經結構設計以允許熔融金屬在其間流動以完成電路; b)電源,其連接至該兩個電極以在該電路關閉時在該兩個電極間施加電流; c)再結合器單元(例如,輝光放電單元),其用以誘發自氣體形成初生水及原子氫;其中該再結合器之流出物經引向該電路(例如,該熔融金屬、陽極、陰極、浸沒於熔融金屬儲集器中之電極); 其中當跨越該電路施加電流時,該再結合器單元之該流出物經歷反應以產生電漿。A system for generating plasma comprising: a) two electrodes structured to allow molten metal to flow therebetween to complete the circuit; b) a power supply connected to the two electrodes to apply current between the two electrodes when the circuit is closed; c) a recombiner unit (eg, glow discharge unit) for inducing formation of nascent water and atomic hydrogen from gases; wherein the effluent of the recombiner is directed to the electrical circuit (eg, the molten metal, anode, cathode , electrodes immersed in a molten metal reservoir); Wherein when a current is applied across the circuit, the effluent of the recombiner unit undergoes a reaction to generate plasma. 如請求項51之系統,其中該系統用於自該電漿產生熱。The system of claim 51, wherein the system is used to generate heat from the plasma. 如請求項51之系統,其中該系統用於自該電漿產生光。The system of claim 51, wherein the system is used to generate light from the plasma. 如請求項1至50中任一項之系統,其包含網狀網路,該網狀網路包含在至少一個頻帶內傳輸且接收電磁信號的複數個電力系統傳輸器-接收器節點,該頻帶之頻率由於以短分離距離在本端定位節點之能力而可為高頻,其中該頻率可在約0.1 GHz至500 GHz、1 GHz至250 GHz、1 GHz至100 GHz、1 GHz至50 GHz及1 GHz至25 GHz之至少一個範圍內。The system of any one of claims 1 to 50, comprising a mesh network comprising a plurality of power system transmitter-receiver nodes transmitting and receiving electromagnetic signals in at least one frequency band, the frequency band The frequency can be high frequency due to the ability to locate nodes locally with short separation distances, where the frequency can be in the range of about 0.1 GHz to 500 GHz, 1 GHz to 250 GHz, 1 GHz to 100 GHz, 1 GHz to 50 GHz and In at least one range from 1 GHz to 25 GHz. 一種超導量子干擾裝置(SQUID)或SQUID型電子元件,其包含至少一種低能量氫物種
Figure 03_image1048
Figure 03_image1050
(或具有匹配此等物種之光譜特徵的物種),及輸入電流及輸入電壓電路以及輸出電流及輸出電壓電路中之至少一者,其用以進行以下操作中之至少一者:感測及改變低能量氫陰離子及分子低能量氫中之至少一者的磁鏈狀態。
A superconducting quantum interference device (SQUID) or SQUID-type electronic component comprising at least one low-energy hydrogen species
Figure 03_image1048
and
Figure 03_image1050
(or species having spectral signatures matching those species), and at least one of an input current and input voltage circuit and an output current and output voltage circuit for at least one of: sensing and changing The magnetic linkage state of at least one of low energy hydride ions and molecular low energy hydrogen.
如請求項55之電子元件,其中該等電路包含AC諧振電路,該等AC諧振電路包含射頻RLC電路。The electronic component of claim 55, wherein the circuits comprise AC resonant circuits, and the AC resonant circuits comprise radio frequency RLC circuits. 如請求項55之電子元件,其中該等SQUID或SQUID型電子元件進一步包含至少一個電磁輻射源(例如,微波、紅外、可見光或紫外輻射中之至少一者的源),以例如在樣品中誘發磁場。The electronic components of claim 55, wherein the SQUID or SQUID-type electronic components further comprise at least one source of electromagnetic radiation (eg, a source of at least one of microwave, infrared, visible or ultraviolet radiation) to induce, eg, in a sample magnetic field. 如請求項57之SQUID或SQUID型電子元件,其中該輻射源包含雷射或微波產生器。A SQUID or SQUID-type electronic component as claimed in claim 57, wherein the radiation source comprises a laser or microwave generator. 如請求項58之SQUID或SQUID型電子元件,其中雷射輻射係藉由透鏡或光纖以聚焦方式施加。A SQUID or SQUID-type electronic component as claimed in claim 58, wherein the laser radiation is applied in a focused manner by means of lenses or optical fibers. 如請求項55至59中任一項之SQUID或SQUID型電子元件,其中該SQUID及SQUID型電子元件進一步包含施加至該低能量氫陰離子及該分子低能量氫中之至少一者的磁場源。The SQUID or SQUID-type electronic component of any one of claims 55 to 59, wherein the SQUID and SQUID-type electronic component further comprises a magnetic field source applied to at least one of the low-energy hydride ion and the molecular low-energy hydrogen. 如請求項60之SQUID或SQUID型電子元件,其中該磁場可為可調諧的。The SQUID or SQUID-type electronic component of claim 60, wherein the magnetic field may be tunable. 如請求項61之SQUID或SQUID型電子元件,其中該輻射源及該磁場中之至少一者的可調諧性使得能夠在該電磁輻射源與該磁場之間達成選擇性且受控的諧振。The SQUID or SQUID-type electronic component of claim 61, wherein the tunability of at least one of the radiation source and the magnetic field enables selective and controlled resonance between the electromagnetic radiation source and the magnetic field. 如請求項55至62中任一項之SQUID或SQUID型電子元件,其包含在高溫下操作之電腦邏輯閘、記憶體元件及其他電子量測或致動器裝置,諸如磁力計、感測器及開關。A SQUID or SQUID-type electronic component as claimed in any one of claims 55 to 62, comprising computer logic gates, memory elements and other electronic measurement or actuator devices, such as magnetometers, sensors, operating at high temperatures and switch. 一種超導量子干擾裝置(SQUID),其包含:電連接至超導迴路之至少兩個約瑟夫森接面, 其中該約瑟夫森接面包含具有EPR活性之氫物種H2A superconducting quantum interference device (SQUID-), comprising: electrically connected to the superconducting loop of the at least two Josephson junctions, wherein the Josephson junction comprising a hydrogen active species H EPR of 2. 如請求項64之SQUID,其中該氫物種為MOOH:H2 ,其中M為金屬(例如,Ag、Ga)。The requested item of SQUID 64, wherein the hydrogen species is MOOH: H 2, where M is a metal (e.g., Ag, Ga). 一種方法,其包含: a)對熔融金屬進行電偏壓; b)引導電漿產生單元(例如,輝光放電單元)之流出物與經偏壓熔融金屬相互作用且誘發形成電漿。A method that includes: a) electrically biasing the molten metal; b) Directing the effluent of a plasma generating cell (eg, a glow discharge cell) to interact with the biased molten metal and induce the formation of a plasma. 如請求項66之方法,其中該電漿產生單元之該流出物由在操作期間穿過該電漿產生單元之氫氣(H2 )及氧氣(O2 )氣體混合物產生。The method according to item 66 of the request, wherein the plasma generating unit of the effluent of the hydrogen produced by the cell through the plasma during operation (H 2) and oxygen (O 2) gas mixture generator. 氣態傳熱劑及浮力劑,其包含分子低能量氫(例如,具有匹配分子低能量氫之光譜特徵的物種)。Gaseous heat transfer and buoyancy agents comprising molecular low energy hydrogen (eg, species with spectral characteristics matching molecular low energy hydrogen). 一種MRI氣體對比劑,其包含分子低能量氫(例如,具有匹配分子低能量氫之光譜特徵的物種)。An MRI gas contrast agent comprising molecular low energy hydrogen (eg, a species with spectral signatures matching the molecular low energy hydrogen). 一種低能量氫分子氣體雷射,其包含分子低能量氫氣體(H2 (1/p) p =2,3,4,5,…,137) (例如,具有匹配分子低能量氫之光譜特徵的物種)、包含該分子低能量氫氣體之雷射空腔、該分子低能量氫氣體之旋轉能階之激發源,及雷射光學件。A low-energy hydrogen molecular gas laser comprising molecular low-energy hydrogen gas (H 2 (1/p) p =2,3,4,5,...,137) (eg, having spectral characteristics matching molecular low-energy hydrogen species), a laser cavity containing the molecular low-energy hydrogen gas, an excitation source for the rotational energy level of the molecular low-energy hydrogen gas, and laser optics. 如請求項70之雷射,其中該等雷射光學件包含在該空腔之末端處的反射鏡,該空腔包含處於激發旋轉狀態的分子低能量氫氣體,且該等反射鏡中之一者為半透明的以允許雷射光自該空腔發射。The laser of claim 70, wherein the laser optics comprise mirrors at the ends of the cavity comprising molecular low energy hydrogen gas in an excited rotational state, and one of the mirrors One is translucent to allow laser light to be emitted from the cavity. 如請求項70或71之雷射,其中該激發源包含以下各者中之至少一者:雷射、閃光燈、氣體放電系統(例如,輝光、微波、射頻(RF)、感應耦合RF、電容耦合RF或其他電漿放電系統)。The laser of claim 70 or 71, wherein the excitation source comprises at least one of: laser, flash lamp, gas discharge system (eg, glow, microwave, radio frequency (RF), inductively coupled RF, capacitively coupled RF or other plasma discharge systems). 如請求項70至72中任一項之雷射,其進一步包含外部或內部場源(例如,電場或磁場源)以使得至少一個所要分子低能量氫旋轉能階被填充,其中該能階包含所要自旋軌道及磁通鏈能移中之至少一者。The laser of any one of claims 70 to 72, further comprising an external or internal field source (eg, an electric or magnetic field source) such that at least one desired molecular low energy hydrogen rotational energy level is filled, wherein the energy level comprises At least one of the desired spin-orbit and flux linkage energy shift. 如請求項70至73中任一項之雷射,其中雷射躍遷發生在選定旋轉狀態之反轉居量與較少填充之較低能量的反轉居量之間。The laser of any one of claims 70 to 73, wherein the laser transition occurs between an inversion population of the selected rotational state and a less filled lower energy inversion population. 如請求項70至73中任一項之雷射,其中該雷射空腔、光學件、激發源及外部場源經選擇以達成所要反轉居量及對所要較少填充之較低能態的受激發射。The laser of any one of claims 70 to 73, wherein the laser cavity, optics, excitation source, and external field source are selected to achieve a desired inversion population and a lower energy state for a desired less filling stimulated emission. 如請求項75之雷射,其包含固體雷射介質。The laser of claim 75, comprising a solid-state laser medium. 如請求項76之雷射,其中該固體雷射介質包含捕集於固體基質中之分子低能量氫,其中低能量氫分子可為自由轉子且該固體介質替換分子低能量氫氣體雷射之氣體空腔。The laser of claim 76, wherein the solid laser medium comprises molecular low energy hydrogen trapped in a solid matrix, wherein the low energy hydrogen molecules can be free rotors and the solid medium replaces the gas of the molecular low energy hydrogen gas laser cavity. 如請求項77之雷射,其中該固體雷射介質包含以下各者中之至少一者:GaOOH:H2 (1/4)、KCl:H2 (1/4)及具有經捕集分子低能量氫之矽(例如,Si(晶體):H2 (1/4)) (或具有其光譜特徵之物種)。The laser of claim 77, wherein the solid laser medium comprises at least one of the following: GaOOH:H 2 (1/4), KCl:H 2 (1/4) and a low molecular weight hydrogen energy of silicon (e.g., Si (crystalline): H 2 (1/4)) ( or with a spectral characteristic of the species).
TW110105166A 2020-02-24 2021-02-09 Magnetohydrodynamic hydrogen electrical power generator TW202146759A (en)

Applications Claiming Priority (28)

Application Number Priority Date Filing Date Title
US202062980959P 2020-02-24 2020-02-24
US62/980,959 2020-02-24
US202062992783P 2020-03-20 2020-03-20
US62/992,783 2020-03-20
US202063001761P 2020-03-30 2020-03-30
US63/001,761 2020-03-30
US202063012243P 2020-04-19 2020-04-19
US63/012,243 2020-04-19
US202063024487P 2020-05-13 2020-05-13
US63/024,487 2020-05-13
US202063031557P 2020-05-28 2020-05-28
US63/031,557 2020-05-28
US202063043763P 2020-06-24 2020-06-24
US63/043,763 2020-06-24
US202063056270P 2020-07-24 2020-07-24
US63/056,270 2020-07-24
US202063072076P 2020-08-28 2020-08-28
US63/072,076 2020-08-28
US202063086520P 2020-10-01 2020-10-01
US63/086,520 2020-10-01
US202063111556P 2020-11-09 2020-11-09
US63/111,556 2020-11-09
US202063127985P 2020-12-18 2020-12-18
US63/127,985 2020-12-18
US202163134537P 2021-01-06 2021-01-06
US63/134,537 2021-01-06
PCT/US2021/017148 WO2021159117A1 (en) 2020-02-08 2021-02-08 Magnetohydrodynamic hydrogen electrical power generator
WOPCT/US21/17148 2021-02-08

Publications (1)

Publication Number Publication Date
TW202146759A true TW202146759A (en) 2021-12-16

Family

ID=80783729

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110105166A TW202146759A (en) 2020-02-24 2021-02-09 Magnetohydrodynamic hydrogen electrical power generator

Country Status (1)

Country Link
TW (1) TW202146759A (en)

Similar Documents

Publication Publication Date Title
US20230143022A1 (en) Magnetohydrodynamic hydrogen electrical power generator
CN110494388B (en) Magnetohydrodynamic power generator
US20220021290A1 (en) Magnetohydrodynamic hydrogen electrical power generator
CN109247031B (en) Thermal photovoltaic generator
CN111511676A (en) Magnetohydrodynamic power generator
JP2021002523A (en) Thermophotovoltaic electrical power generator
WO2016182600A1 (en) Ultraviolet electrical power generation systems and methods regarding same
US20240079988A1 (en) Infrared light recycling thermophotovoltaic hydrogen electrical power generator
TW202146759A (en) Magnetohydrodynamic hydrogen electrical power generator
BR112021013983A2 (en) MAGNETO-HYDRODYNAMIC HYDROGEN ELECTRIC POWER GENERATOR
CN116830213A (en) Infrared light recovery thermophotovoltaic hydrogen power generator