TW202141082A - System and method for manufacturing polarizer, and polarizer manufactured by the same - Google Patents
System and method for manufacturing polarizer, and polarizer manufactured by the same Download PDFInfo
- Publication number
- TW202141082A TW202141082A TW109112906A TW109112906A TW202141082A TW 202141082 A TW202141082 A TW 202141082A TW 109112906 A TW109112906 A TW 109112906A TW 109112906 A TW109112906 A TW 109112906A TW 202141082 A TW202141082 A TW 202141082A
- Authority
- TW
- Taiwan
- Prior art keywords
- polarizing film
- humidification
- heating
- manufacturing
- solution
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D7/00—Producing flat articles, e.g. films or sheets
- B29D7/01—Films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/0092—Drying moulded articles or half products, e.g. preforms, during or after moulding or cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Mathematical Physics (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ophthalmology & Optometry (AREA)
- Chemical & Material Sciences (AREA)
- Polarising Elements (AREA)
Abstract
Description
本發明是有關於一種用於製造偏光膜的系統、製造偏光膜的方法及由其製造的偏光膜。The present invention relates to a system for manufacturing a polarizing film, a method of manufacturing a polarizing film, and a polarizing film manufactured therefrom.
偏光板為廣泛應用於液晶顯示器之光學元件,隨著液晶顯示器的應用越來越廣,例如,手機、穿戴式裝置等,對偏光板品質的要求也越來越高。偏光板在製成後通常會搭配保護膜或離型膜貼合至各種尺寸的顯示器。Polarizers are optical components that are widely used in liquid crystal displays. With the increasing application of liquid crystal displays, such as mobile phones, wearable devices, etc., the requirements for the quality of polarizers are becoming higher and higher. After the polarizing plate is manufactured, it is usually attached to a display of various sizes with a protective film or a release film.
本發明係有關於一種用於製造偏光膜的系統、製造偏光膜的方法及由其製造的偏光膜。The present invention relates to a system for manufacturing a polarizing film, a method of manufacturing a polarizing film, and a polarizing film manufactured therefrom.
根據本發明之一方面,提出一種用於製造偏光膜的系統,其包括一第一加濕加熱裝置。第一加濕加熱裝置用以同時加濕且加熱一偏光膜前驅物。According to one aspect of the present invention, a system for manufacturing a polarizing film is provided, which includes a first humidification and heating device. The first humidification and heating device is used for simultaneously humidifying and heating a polarizing film precursor.
根據本發明之另一方面,提出一種製造偏光膜的方法,其包括一第一加濕加熱步驟。第一加濕加熱步驟為對一偏光膜前驅物同時進行加濕處理與加熱處理。According to another aspect of the present invention, a method of manufacturing a polarizing film is provided, which includes a first humidification and heating step. The first humidification and heating step is to simultaneously humidify and heat a polarizing film precursor.
根據本發明之又另一方面,提出一種偏光膜,其中一種製造方法製造。該方法包括第一加濕加熱步驟。第一加濕加熱步驟為對一偏光膜前驅物同時進行加濕處理與加熱處理。為對一偏光膜前驅物同時進行加濕處理與加熱處理。According to yet another aspect of the present invention, a polarizing film is provided, which is manufactured by a manufacturing method. The method includes a first humidification and heating step. The first humidification and heating step is to simultaneously humidify and heat a polarizing film precursor. In order to simultaneously humidify and heat a polarizing film precursor.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:
以下將配合所附圖式詳述本發明之實施例,應注意的是,以下圖示並未按照比例繪製,事實上,可能任意的放大或縮小元件的尺寸以便清楚表現出本發明的特徵,而在說明書及圖式中,同樣或類似的元件將以類似的符號表示。The embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the following figures are not drawn to scale. In fact, the size of elements may be arbitrarily enlarged or reduced in order to clearly show the characteristics of the present invention. In the specification and drawings, the same or similar elements will be represented by similar symbols.
以下公開許多不同的實施方法或是例子來實行本發明之不同特徵,以下描述具體的元件及其排列的例子以闡述本發明。當然這些僅是例子且不該以此限定本發明的範圍。此外,在不同實施例中可能使用重複的標號或標示,這些重複僅為了簡單清楚地敘述本揭露,不代表所討論的不同實施例及/或結構之間有特定的關係。Many different implementation methods or examples are disclosed below to implement different features of the present invention. The following describes specific elements and examples of their arrangement to illustrate the present invention. Of course, these are only examples and should not be used to limit the scope of the present invention. In addition, repeated reference signs or labels may be used in different embodiments. These repetitions are only used to describe the present disclosure simply and clearly, and do not represent a specific relationship between the different embodiments and/or structures discussed.
再者,應理解的是,在方法進行之前、當中或之後可能具有額外的操作步驟,且所述的一些操作步驟可能在另一些實施例之方法中被取代或刪除。Furthermore, it should be understood that there may be additional operation steps before, during, or after the method is performed, and some of the described operation steps may be replaced or deleted in the method of other embodiments.
請參照第1圖,其用以說明製造偏光膜100'的系統及偏光膜100'的製造方法。偏光膜前驅物100可利用包括例如輥輪等的傳送裝置傳送至製程槽200,然後第一加濕加熱裝置300,然後第二加濕加熱裝置400,且然後乾燥裝置500進行處理,藉此得到偏光膜100'。輥輪可隨著偏光膜前驅物100的輸送而順應轉動。偏光膜前驅物100可為聚乙烯醇(polyvinyl alcohol, PVA)薄膜。聚乙烯醇可藉由皂化聚乙酸乙烯酯而形成。在一些實施例中,聚乙酸乙烯酯可為乙酸乙烯酯之單聚物或乙酸乙烯酯及其它單體之共聚物等。上述其它單體可為不飽和羧酸類、烯烴類、不飽和磺酸類或乙烯基醚類等。在另一些實施例中,聚乙烯醇可為經改質的聚乙烯醇,例如,經醛類改質的聚乙烯醇縮甲醛(polyvinylformal)、聚乙烯醇縮乙酸或聚乙烯醇縮丁醛(Polyvinylbutyral)等。Please refer to Figure 1, which is used to illustrate the system for manufacturing the polarizing film 100' and the manufacturing method of the polarizing film 100'. The polarizing
製程槽200可包括一個或多個膨潤槽、染色槽、交聯槽、補色槽、或洗淨槽。偏光膜前驅物100可經膨潤槽進行膨潤處理。偏光膜前驅物100可經染色槽進行染色處理。偏光膜前驅物100可經交聯槽進行交聯處理,藉此係對偏光膜前驅物100進行耐水化處理或是調整其色調。交聯槽中的槽液可包含硼酸、碘化鉀、碘化鋅或上述之組合。硼酸為交聯劑,碘化鉀及碘化鋅則用於光學調整,可藉由改變其濃度以調整偏光膜色相。進行交聯處理時,亦可同時對偏光膜前驅物100進行延伸處理。延伸處理可藉由使設置於製程槽200之入口及出口處的傳送裝置之間的傳送速率差異產生,例如利用輥輪周速差的方法加以進行。偏光膜前驅物100可經補色槽進行補色處理,以調整偏光膜前驅物100達成偏光膜100'所需的色相。補色槽中的槽液可與交聯槽中的槽液有類似甚至相同的構成。通過交聯槽及/或補色槽後形成的偏光膜前驅物100可通過洗淨槽(例如水洗槽)以將附著在偏光膜前驅物100之表面的反應溶液洗淨。The
然後,偏光膜前驅物100傳送至第一加濕加熱裝置300進行第一加濕加熱步驟,其同時加濕且加熱偏光膜前驅物100。在傳送至乾燥裝置500進行乾燥之前,對拉伸的偏光膜前驅物100進行加濕處理與加熱處理能提升偏光膜100'的透過率Ty及偏振度Py。對偏光膜前驅物100在此進行的加熱處理可視為在傳送至乾燥裝置500進行乾燥之前的預加熱處理,能減低與乾燥裝置500之加熱溫度之間的溫度差,避免溫度差所造成不期望的結構性質偏差,從而能提升偏光膜100'的產品良率。第一加濕加熱裝置300包括第一輥輪302與第一液槽304。第一液槽304含有第一溶液306。第一輥輪302的相對表面分別接觸第一溶液306與偏光膜前驅物100的第一偏光膜表面100S1,如此,第一輥輪302從第一液槽304沾附到的第一溶液306可順著第一輥輪302滾動而傳送達到偏光膜前驅物100的第一偏光膜表面100S1,從而將第一溶液306塗佈至第一偏光膜表面100S1以加濕偏光膜前驅物100。以沾附方式將第一溶液306塗佈到第一偏光膜表面100S1能避免過多的溶液造成偏光膜前驅物100在乾燥裝置500乾燥不完全的問題,而提升偏光膜前驅物100的乾燥效率。此外,也能避免過多溶液被偏光膜前驅物100吸收而影響偏光膜100'之性質。藉此,能提升偏光膜100'的產品良率。一實施例中,第一輥輪302可為具有加熱功能的加熱輥輪,溫度例如為30~70°C,在一實施例中溫度例如為40~60°C。一實施例中,第一液槽304具有加熱功能,可加熱第一溶液306,溫度例如為30~70°C,在一實施例中溫度例如為40~60°C,藉此可利用加熱後的第一溶液306經由接觸偏光膜前驅物100達到加熱偏光膜前驅物100的作用。Then, the polarizing
然後,在另一實施例中,偏光膜前驅物100可再傳送至第二加濕加熱裝置400進行第二加濕加熱步驟,其同時加濕且加熱偏光膜前驅物100。在傳送至乾燥裝置500進行乾燥之前,對拉伸的偏光膜前驅物100進行加濕處理與加熱處理能提升偏光膜100'的透過率Ty及偏振度Py。對偏光膜前驅物100在此進行的加熱處理可視為在傳送至乾燥裝置500進行乾燥之前的預加熱處理,能減低與乾燥裝置500之加熱溫度之間的溫度差,避免溫度差所造成不期望的結構性質偏差,從而能提升偏光膜100'的產品良率。第二加濕加熱裝置400包括第二輥輪402與第二液槽404。第二液槽404含有第二溶液406。第二輥輪402的相對表面分別接觸第二溶液406與偏光膜前驅物100的第二偏光膜表面100S2,如此,第二輥輪402從第二液槽404沾附到的第二溶液406可順著第二輥輪402滾動而傳送達到偏光膜前驅物100的第二偏光膜表面100S2,從而將第二溶液406塗佈至第二偏光膜表面100S2以加濕偏光膜前驅物100。以沾附方式將第二溶液406塗佈到第二偏光膜表面100S2能避免過多的溶液造成偏光膜前驅物100在乾燥裝置500乾燥不完全的問題,而提升偏光膜前驅物100的乾燥效率。此外,也能避免過多溶液被偏光膜前驅物100吸收而影響偏光膜100'之性質。藉此,能提升偏光膜100'的產品良率。一實施例中,第二輥輪402可為具有加熱功能的加熱輥輪,溫度例如為30~70°C,在一實施例中溫度例如為40~60°C。一實施例中,第二液槽404具有加熱功能,可加熱第二溶液406,溫度例如為30~70°C,在一實施例中溫度例如為40~60°C,藉此可利用加熱後的第二溶液406經由接觸偏光膜前驅物100達到加熱偏光膜前驅物100的作用。Then, in another embodiment, the polarizing
第一液槽304的第一溶液306及/或第二液槽404的第二溶液406可含有酒精及/或水。第一液槽304的第一溶液306及/或第二液槽404的第二溶液406可為抗靜電溶液,含有溶劑與抗靜電劑,附著在偏光膜前驅物100的第一偏光膜表面100S1及/或第二偏光膜表面100S2可避免靜電吸附現象,減少或避免雜質沾附於其上,進而能提升偏光膜100'的品質。抗靜電溶液的溶劑包可含酒精及水。在一實施例中,以溶劑例如包含酒精與水為100%來說,抗靜電劑的重量百分比約為溶劑的0.1~5%,可達到優良的抗靜電效果。以溶劑為100%來說,在一實施例中,酒精及水的比例可介於1:1~3:7,且以3:7的組成具有更優良的抗靜電效果(相較於前者而言)。The
抗靜電劑例如是為具有有機陽離子並且熔點為25℃以上且50℃以下之離子性化合物。藉由使用熔點為25℃以上之離子性化合物、即於室溫下為固體之離子性化合物,可抑制防靜電性能之經時變化,換言之,可長期保持防靜電性能。就防靜電性能之長期穩定性之觀點而言,離子性化合物更佳為具有30℃以上、或35℃以上之熔點者。The antistatic agent is, for example, an ionic compound having an organic cation and having a melting point of 25°C or more and 50°C or less. By using an ionic compound with a melting point of 25°C or higher, that is, an ionic compound that is solid at room temperature, changes in antistatic performance over time can be suppressed, in other words, antistatic performance can be maintained for a long time. From the viewpoint of long-term stability of antistatic performance, the ionic compound is more preferably one having a melting point of 30°C or higher, or 35°C or higher.
作為構成離子性化合物之陽離子成分,例如可列舉:咪唑鎓陽離子、吡啶鎓陽離子、銨陽離子、鋶陽離子、鏻陽離子等。此些離子中,於用於本發明實施例之抗靜電溶液之溶劑的情況時,就於沾附偏光膜前驅物100上時不易帶電之觀點而言,較佳為吡啶鎓陽離子或咪唑鎓陽離子。Examples of cationic components constituting the ionic compound include imidazolium cations, pyridinium cations, ammonium cations, sulfonium cations, and phosphonium cations. Among these ions, when used in the solvent of the antistatic solution of the embodiment of the present invention, from the viewpoint that they are not easily charged when adhering to the
另一方面,於離子性化合物中,成為上述陽離子成分之對離子之陰離子成分可為無機之陰離子,亦可為有機之陰離子,例如可列舉如下者:氯陰離子[Cl- ]、溴陰離子[Br- ]、碘陰離子[I- ]、四氯鋁酸鹽陰離子[AlCl4 - ]、七氯二鋁酸鹽陰離子[Al2 Cl7 - ]、四氟硼酸鹽陰離子[BF4 - ]、六氟磷酸鹽陰離子[PF6 - ]、過氯酸鹽陰離子[ClO4 - ]、硝酸鹽陰離子[NO3 - ]、乙酸鹽陰離子[CH3 COO- ]、三氟乙酸鹽陰離子[CF3 COO- ]、氟磺酸鹽陰離子[FSO3 - ]、甲磺酸鹽陰離子[CH3 SO3 - ]、三氟甲磺酸鹽陰離子[CF3 SO3 - ]、對甲苯磺酸鹽陰離子[p-CH3 C6 H4 SO3 - ]、雙(氟磺醯基)醯亞胺陰離子[(FSO2 )2 N- ]、雙(三氟甲磺醯基)醯亞胺陰離子[(CF3 SO2 )2 N- ]、三(三氟甲磺醯基)甲基化陰離子[(CF3 SO2 )3 C- ]、六氟砷酸鹽陰離子[AsF6 - ]、 六氟銻酸鹽陰離子[SbF6 - ]、六氟鈮酸鹽陰離子[NbF6 - ]、六氟鉭酸鹽陰離子[TaF6 - ]、二甲基亞膦酸鹽陰離子[(CH3 )2 POO- ]、(聚)氟化氫氟陰離子[F(HF)n - ](n為1~3左右)、二氰胺陰離子[(CN)2 N- ]、硫氰酸鹽陰離子[SCN- ]、全氟丁磺酸鹽陰離子[C4 F9 SO3 - ]、雙(五氟乙磺醯基)醯亞胺陰離子[(C2 F5 SO2 )2 N- ]、全氟丁酸鹽陰離子[C3 F7 COO- ]、(三氟甲磺醯基)(三氟甲烷羰基)醯亞胺陰離子[(CF3 SO2 )(CF3 CO)N- ]等。On the other hand, in the ionic compound, to become the above-described anion component may be an anionic inorganic ions, the cation may also be an organic anion of the component, for example, by the following: chlorine anions [Cl -], bromine anion [Br -], iodide anion [the I -], tetrachloroaluminate anion [AlCl 4 -], heptachlorodialuminate anion [Al 2 Cl 7 -], tetrafluoroborate anion [BF 4 -], hexafluoro phosphate anions [PF 6 -], perchlorate anion [ClO 4 -], nitrate anion [NO 3 -], acetate anion [CH 3 COO -], trifluoroacetate anion [CF 3 COO -] , fluorosulfonate anion [FSO 3 -], methanesulfonate anion [CH 3 SO 3 -], trifluoromethanesulfonate anion [CF 3 SO 3 -], p-toluenesulfonate anion [p-CH 3 C 6 H 4 SO 3 - ], bis (sulfo-fluoro-acyl) acyl imide anion [(FSO 2) 2 N - ], bis (trifluoromethanesulfonyl acyl) acyl imide anion [(CF 3 SO 2 ) 2 N -], tris (trifluoromethanesulfonyl acyl) methide anion [(CF 3 SO 2) 3 C -], hexafluoroarsenate anion [AsF 6 -], hexafluoroantimonate anion [ SbF 6 -], hexafluoro niobate anions [NbF 6 -], six tantalum fluoride anions [TaF 6 -], dimethylsilylene phosphonate anion [(CH 3) 2 POO - ], ( poly) hydrogen fluoride fluoride anion [F (HF) n -] (n is about 1 to 3), dicyanamide anion [(CN) 2 N -] , thiocyanate anion [SCN -], perfluorobutanesulfonate anion [C 4 F 9 SO 3 - ], bis (pentafluoroethane sulfonyl acyl) acyl imide anion [(C 2 F 5 SO 2 ) 2 N -], perfluoro butyrate anion [C 3 F 7 COO - ], (trifluoromethanesulfonyl acyl) (trifluoromethane-carbonyl) acyl imide anion [(CF 3 SO 2) ( CF 3 CO) N -] and the like.
在此些陰離子中,尤其是包含氟原子之陰離子成分提供防靜電性能優異之離子性化合物,故而可較佳地使用,尤佳為六氟磷酸鹽陰離子、雙(氟磺醯基)醯亞胺陰離子及雙(三氟甲磺醯基)醯亞胺陰離子。Among these anions, especially anion components containing fluorine atoms provide ionic compounds with excellent antistatic properties, so they can be preferably used, especially hexafluorophosphate anions, bis(fluorosulfonyl)imide Anion and bis(trifluoromethanesulfonyl)imide anion.
本發明實施例所使用之離子性化合物之具體例可自上述陽離子成分與陰離子成分的組合中適當地選擇。作為具體之陽離子成分與陰離子成分之組合的化合物,可列舉如下者。Specific examples of the ionic compound used in the examples of the present invention can be appropriately selected from the combination of the above-mentioned cationic components and anionic components. Specific examples of the compound of a combination of a cationic component and an anionic component include the following.
‧吡啶鎓鹽:N-己基吡啶鎓六氟磷酸鹽、N-辛基吡啶鎓六氟磷酸鹽、N-甲基-4-己基吡啶鎓六氟磷酸鹽、N-丁基-4-甲基吡啶鎓六氟磷酸鹽、N-辛基-4-甲基吡啶鎓六氟磷酸鹽、N-己基吡啶鎓雙(氟磺醯基)醯亞胺、N-辛基吡啶鎓雙(氟磺醯基)醯亞胺、 N-甲基-4-己基吡啶鎓雙(氟磺醯基)醯亞胺、N-丁基-4-甲基吡啶鎓雙(氟磺醯基)醯亞胺、N-辛基-4-甲基吡啶鎓雙(氟磺醯基)醯亞胺、N-己基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-辛基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-甲基-4-己基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-丁基-4-甲基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-辛基-4-甲基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-己基吡啶鎓對甲苯磺酸鹽、N-辛基吡啶鎓對甲苯磺酸鹽、N-甲基-4-己基吡啶鎓對甲苯磺酸鹽、N-丁基-4-甲基吡啶鎓對甲苯磺酸鹽、N-辛基-4-甲基吡啶鎓對甲苯磺酸鹽等。‧Pyridinium salt: N-hexylpyridinium hexafluorophosphate, N-octylpyridinium hexafluorophosphate, N-methyl-4-hexylpyridinium hexafluorophosphate, N-butyl-4-methyl Pyridinium hexafluorophosphate, N-octyl-4-methylpyridinium hexafluorophosphate, N-hexylpyridinium bis(fluorosulfonyl) imide, N-octylpyridinium bis(fluorosulfonyl) N -Octyl-4-methylpyridinium bis(fluorosulfonyl)imide, N-hexylpyridinium bis(trifluoromethanesulfonyl)imide, N-octylpyridinium bis(trifluoromethyl) Sulfonyl)imidine, N-methyl-4-hexylpyridinium bis(trifluoromethanesulfonyl)imidine, N-butyl-4-methylpyridinium bis(trifluoromethanesulfonyl) )Imidine, N-octyl-4-methylpyridinium bis(trifluoromethanesulfonyl)imidine, N-hexylpyridinium p-toluenesulfonate, N-octylpyridinium p-toluenesulfonic acid Salt, N-methyl-4-hexylpyridinium p-toluenesulfonate, N-butyl-4-methylpyridinium p-toluenesulfonate, N-octyl-4-methylpyridinium p-toluenesulfonic acid Salt etc.
‧咪唑鎓鹽:1-乙基-3-甲基咪唑鎓六氟磷酸鹽、1-乙基-3-甲基咪唑鎓雙(氟磺醯基)醯亞胺、1-乙基-3-甲基咪唑鎓雙(三氟甲磺醯基)醯亞胺、1-乙基-3-甲基咪唑鎓對甲苯磺酸鹽、1-丁基-3-甲基咪唑鎓甲磺酸鹽等。‧Imidazolium salt: 1-ethyl-3-methylimidazolium hexafluorophosphate, 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imidine, 1-ethyl-3- Methylimidazolium bis(trifluoromethanesulfonyl)imide, 1-ethyl-3-methylimidazolium p-toluenesulfonate, 1-butyl-3-methylimidazolium methanesulfonate, etc. .
‧吡咯烷鎓鹽:N-丁基-N-甲基吡咯烷鎓六氟磷酸鹽、N-丁基-N-甲基吡咯烷鎓雙(氟磺醯基)醯亞胺、N-丁基-N-甲基吡咯烷鎓雙(三氟甲磺醯基)醯亞胺、N-丁基-N-甲基吡咯烷鎓對甲苯磺酸鹽等。‧Pyrrolidinium salt: N-butyl-N-methylpyrrolidinium hexafluorophosphate, N-butyl-N-methylpyrrolidinium bis(fluorosulfonyl)imide, N-butyl -N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide, N-butyl-N-methylpyrrolidinium p-toluenesulfonate, etc.
‧銨鹽:四丁基銨六氟磷酸鹽、 四丁基銨雙(氟磺醯基)醯亞胺、四己基銨雙(氟磺醯基)醯亞胺、三辛基甲基銨雙(氟磺醯基)醯亞胺、(2-羥基乙基)三甲基銨雙(氟磺醯基)醯亞胺、四丁基銨雙(三氟甲磺醯基)醯亞胺、四己基銨雙(三氟甲磺醯基)醯亞胺、三辛基甲基銨雙(三氟甲磺醯基)醯亞胺、(2-羥基乙基)三甲基銨雙(三氟甲磺醯基)醯亞胺、四丁基銨對甲苯磺酸鹽、四己基銨對甲苯磺酸鹽、三辛基甲基銨對甲苯磺酸鹽、(2-羥基乙基)三甲基銨對甲苯磺酸鹽、(2-羥基乙基)三甲基銨二甲基亞膦酸鹽等。‧Ammonia salt: tetrabutylammonium hexafluorophosphate, tetrabutylammonium bis(fluorosulfonyl) imide, tetrahexylammonium bis(fluorosulfonyl) imide, trioctyl methyl ammonium bis( Fluorosulfonyl)imid, (2-hydroxyethyl)trimethylammonium bis(fluorosulfonyl)imid, tetrabutylammonium bis(trifluoromethanesulfonyl)imid, tetrahexyl Ammonium bis(trifluoromethanesulfonyl) imide, trioctyl methyl ammonium bis(trifluoromethanesulfonyl) imide, (2-hydroxyethyl) trimethylammonium bis(trifluoromethanesulfon) (Amino) imine, tetrabutylammonium p-toluenesulfonate, tetrahexylammonium p-toluenesulfonate, trioctylmethylammonium p-toluenesulfonate, (2-hydroxyethyl)trimethylammonium p-toluenesulfonate Toluenesulfonate, (2-hydroxyethyl)trimethylammonium dimethylphosphonite, etc.
該等離子性化合物可分別單獨使用,或組合兩種以上而使用。This ionic compound can be used individually or in combination of 2 or more types, respectively.
此外,在一實施例中,本發明的離子性化合物可為一吡啶鎓陽離子,化合物的結構式(1)如下:In addition, in one embodiment, the ionic compound of the present invention may be a pyridinium cation, and the structural formula (1) of the compound is as follows:
………..(1) ………..(1)
結構式(1)的吡啶鎓鹽(ピリジニウム塩)的陽離子例如是N-烷基吡啶鎓陽離子。結構式(1)的R3 表示具有12-16個碳原子的直鏈烷基。結構式(1)的陽離子例如是N-十二烷基吡啶離子(N-ドデシルピリジニウムイオン)、N-十三烷基吡啶離子(N-トリデシルピリジニウムイオン)、N-十四烷基吡啶離子(N-テトラデシルピリジニウムイオン)、N-十五烷基吡啶離子(N-ペンタデシルピリジニウムイオン)、N-十六烷基吡啶離子(N-ヘキサデシルピリジニウムイオン)、N-十二烷基-4-甲基吡啶離子(N-ドデシル-4-メチルピリジニウムイオン)、N-十三烷基-4-甲基吡啶離子(N-トリデシル-4-メチルピリジニウムイオン)、N-十四烷基-4-甲基吡啶離子(N-テトラデシル-4-メチルピリジニウムイオン)、N-十五烷基-4-甲基吡啶鎓離子(N-ペンタデシル-4-メチルピリジニウムイオン)或N-十六烷基-4-甲基吡啶鎓離子(N-ヘキサデシル-4-メチルピリジニウムイオン)。The cation of the pyridinium salt of the structural formula (1) is, for example, an N-alkylpyridinium cation. R 3 in the structural formula (1) represents a straight-chain alkyl group having 12-16 carbon atoms. The cation of the structural formula (1) is, for example, N-dodecylpyridinium ion (N-dodecylpyridinium ion), N-tridecylpyridinium ion (N-tridecylpyridinium ion), N-tetradecylpyridinium ion (N-tetradecylpyridinium), N-pentadecylpyridinium ion (N-pentadecylpyridinium), N-hexadecylpyridinium ion (N-pentadecylpyridinium) 4-methylpyridinium ion (N-dishil-4-Merbalimine), N-tridecyl-4-methylpyridinium ion (N-tridecyl-4-methylpyridinium), N-tetradecyl- 4-methylpyridinium ion (N-Tetrabesil-4-Melpyridinium), N-pentadecyl-4-methylpyridinium ion (N-pentadecyl-4-methylpyridinium or N-hexadecyl) -4-Methylpyridinium ion (N-ヘキサデシル-4-メチルピリジニウムイオン).
結構式(1)的R4表示氫原子或甲基,X-表示具有氟原子的離子。X-在吡啶鎓鹽中利如是氟離子(フッ素イオン)、四氟硼酸根離子(テトラフルオロボレートイオン)、六氟磷酸根離子(ヘキサフルオロホスフェートイオン)、三氟乙酸根離子(トリフルオロメタンスルホネートイオン)、三氟甲磺酸根離子(トリフルオロメタンスルホネートイオン)、雙(氟磺酰基)亞胺離子(ビス(フルオロスルホニル)イミドイオン)、雙(三氟甲磺酰基)酰亞胺離子(ビス(トリフルオロメタンスルホニル)イミドイオン)、三(三氟甲磺酰基)甲烷離子(トリス(トリフルオロメタンスルホニル)メタニドイオン)、六氟砷酸根離子(ヘキサフルオロアーセネートイオン)、六氟銻酸根離子(ヘキサフルオロアンチモネートイオン)、六氟鈮酸鹽離子(ヘキサフルオロニオベートイオン)、六氟鉭酸鹽離子(ヘキサフルオロタンタレートイオン)、(聚)氫氟氟離子((ポリ)ハイドロフルオロフルオライドイオン)、全氟丁烷磺酸鹽離子(パーフルオロブタンスルホネートイオン)、雙(五氟乙磺酰基)酰亞胺離子(ビス(ペンタフルオロエタンスルホニル)イミドイオン)、全氟丁酸離子(パーフルオロブタノエートイオン)或(三氟甲磺酰基)(三氟甲烷羰基)酰亞胺離子((トリフルオロメタンスルホニル)(トリフルオロメタンカルボニル)イミドイオン)。In the structural formula (1), R4 represents a hydrogen atom or a methyl group, and X- represents an ion having a fluorine atom. X-In the pyridinium salt, it is fluoride ion, tetrafluoroborate ion, hexafluorophosphate ion, and trifluoroacetate ion. ), trifluoromethanesulfonate ions (Trifluoromethanesulfonyl), bis(fluorosulfonyl) imide ion (Mus (Furusyl) imide ion), Bis(trifluoromethanesulfonyl) imide ion (Etorofluoromethanesulfonyl)スルホニル) ミドイオン), three (trifluoromethanesulfonyl) methane ions (トリス (トリフルオロメタンスルホニル) メタニドイオン), hexafluoroarsenate ion (ヘキサフルオオオオオオオオオオオオオオオオオオヘオオオオオオオオオオオオオオオオオ) , Hexafluoroniobate ions (ヘキサフルオロニオベートイオン), hexafluorotantalate ions (ヘキサフルオロタンタレートイオン), (poly)hydrofluoride fluoride ions ((ポロイフラオ) Fluorofluoride) Alkane sulfonate ion (Palofluronic acid ions), bis(pentafluoroethanesulfonyl)imide ion (ビス(ペンタフルオロエタンスルホニル) ミドオオン), perfluorobutyric acid ion (Trifluoromethanesulfonyl) (trifluoromethane carbonyl) imide ion ((Trifluoromethanesulfonyl) (Trifluoromethanesulfonyl)imide ion).
由於構成式的吡啶鎓鹽的陰離子成分X- 為具有氟原子的離子,因此能得到抗靜電性能優異的離子性化合物。 具體來說,該陰離子例如是:氟離子[F- ](フッ素イオン)、四氟硼酸根離子[BF4 - ](テトラフルオロボレートイオン)、六氟磷酸根離子[PF6 - ](ヘキサフルオロホスフェートイオン)、三氟乙酸根離子[CF3 COO- ](トリフルオロアセテートイオン)、三氟甲磺酸根離子[CF3 SO3 - ](トリフルオロメタンスルホネートイオン)、雙(氟磺酰基)酰亞胺離子[(FSO2 )2 N- ](ビス(フルオロスルホニル)イミドイオン)、雙(三氟甲磺酰基)酰亞胺離子[(CF3 SO2 )2 N- ](ビス(トリフルオロメタンスルホニル)イミドイオン)、三(三氟甲磺酰基)甲烷離子[(CF3 SO2 )3 C- ](トリス(トリフルオロメタンスルホニル)メタニドイオン)、六氟砷酸根離子[AsF6 - ](ヘキサフルオロアーセネートイオン)、六氟銻酸根離子[SbF6 - ](ヘキサフルオロアンチモネートイオン)、六氟鈮酸根離子[NbF6 - ](ヘキサフルオロニオベートイオン)、六氟鉭酸鹽離子[TaF6 - ](ヘキサフルオロタンタレートイオン)、(聚)氫氟氟酸離子[F(HF)n - ](n約為1至3)((ポリ)ハイドロフルオロフルオライドイオン)、全氟丁烷磺酸根離子[C4 F9 SO3 - ](パーフルオロブタンスルホネートイオン)、雙(五氟乙磺酰基)酰亞胺離子[(C2 F5 SO2 )2 N- ](ビス(ペンタフルオロエタンスルホニル)イミドイオン)、全氟丁酸離子[C3 F7 COO- ](パーフルオロブタノエートイオン)、(三氟甲磺酰基)(三氟甲烷羰基)酰亞胺離子[(CF3 SO2 )(CF3 CO)N- ]((トリフルオロメタンスルホニル)(トリフルオロメタンカルボニル)イミドイオン)等。 Since the anion component X- of the pyridinium salt of the structural formula is an ion having a fluorine atom, an ionic compound having excellent antistatic performance can be obtained. Specifically, the anion is, for example: fluoride ion [F -] (fuッelement by Lion Ltd.), a tetrafluoroborate ion [BF 4 -] (Te Suites ra fu Hikaru Bio ro Baldwin RitzーSuites by Lion Ltd.), hexafluorophosphate ion [PF 6 -] (Hoechst sa fu Hikaru Bio ro Trifluoromethanesulfonate ion [CF 3 COO - ](Trifluoroacetate ion), trifluoromethanesulfonate ion [CF 3 SO 3 - ](trifluoroacetate ion [CF 3 COO-](Trifluoromethanesulfonate ion), bisfluoromethanesulfonate ion Amine ion [(FSO 2 ) 2 N - ](ビス(フルオロスルホニル) imidion), bis(trifluoromethanesulfonyl) imide ion [(CF 3 SO 2 ) 2 N - ](ビス(トリオロオルホニル)イミドイオン), tris(trifluoromethanesulfonyl) methane ion [(CF 3 SO 2 ) 3 C - ](トリス (トリフルオロメタンスルホニル) メタニドイオン), hexafluoroarsenate ion [AsF 6 - ](ヘキキオーン), hexafluoroantimonate ion [SbF 6 -] (Hoechst sa fu Hikaru Bio ro a nn chi holds NekoーSuites by Lion Ltd.), hexafluoro niobate ion [NbF 6 -] (Hoechst sa fu Hikaru Bio ro ni Bio BakeliteーSuites by Lion Ltd.), hexafluorophosphate tantalate ions [TaF 6 -] ( Hoechst sa fu Hikaru Bio ro ta nn ta RitzーSuites by Lion nn), (poly) hydrofluoric hydrofluoric acid ions [F (HF) n -] (n is about 1 to 3) ((POLYPLASDONE) Hi--ide ro fu Hikaru Bio ro fu Hikaru Bio ra-ide by Lion Ltd.) butane sulfonate perfluorinated ion [ C 4 F 9 SO 3 - ](パーフルオロブタンスルホネートイオン), bis(pentafluoroethanesulfonyl) imide ion [(C 2 F 5 SO 2 ) 2 N - ](ビス(ペンタルエタンスルホニル) ), perfluoro ionic acid [C 3 F 7 COO -] ( paーfu Hikaru Bio ro bu ta Techno EitoーSuites by Lion nn), (trifluoromethanesulfonyl) (trifluoromethane-carbonyl) imide ion [(CF 3 SO 2) ( CF 3 CO) N -] ((ri Suites Hikaru Bio fu roメta nn ni suruホHikaru) (Bio Suites Hikaru ri fu roメta Kagaku Kogyo Kabushiki ni Hikaru Hikaru Baldwin)イド-o-Chemie Ltd.) and the like.
用於本發明實施例的吡啶鎓鹽的具體實例可以適當地選自前述陽離子與陰離子的組合。 作為陽離子和陰離子組成的化合物的具體實例如是:N-十二烷基吡啶六氟磷酸鹽(N-ドデシルピリジニウム ヘキサフルオロホスフェート)、N-十四烷基吡啶六氟磷酸鹽(N-テトラデシルピリジニウム ヘキサフルオロホスフェート)、N-十六烷基吡啶六氟磷酸鹽(N-ヘキサデシルピリジニウム ヘキサフルオロホスフェー)、N-十二烷基-4-甲基吡啶六氟磷酸鹽(N-ドデシル-4-メチルピリジニウム ヘキサフルオロホスフェート)、N-十四烷基-4-甲基吡啶六氟磷酸鹽(N-テトラデシル-4-メチルピリジニウム ヘキサフルオロホスフェート)、N-十六烷基-4-甲基吡啶六氟磷酸鹽(N-ヘキサデシル-4-メチルピリジニウム ヘキサフルオロホスフェート)、N-十二烷基吡啶雙(氟磺酰基)酰亞胺(N-ドデシルピリジニウム ビス(フルオロスルホニル)イミド)、N-十四烷基吡啶雙(氟磺酰基)酰亞胺(N-テトラデシルピリジニウム ビス(フルオロスルホニル)イミド)、N-十六烷基吡啶雙(氟磺酰基)酰亞胺(N-ヘキサデシルピリジニウム ビス(フルオロスルホニル)イミド)、N-十二烷基-4-甲基吡啶雙(氟磺酰基)酰亞胺(N-ドデシル-4-メチルピリジニウム ビス(フルオロスルホニル)イミド)、N-十四烷基-4-甲基吡啶雙(氟磺酰基)酰亞胺(N-テトラデシル-4-メチルピリジニウム ビス(フルオロスルホニル)イミド)、N-十六烷基-4-甲基吡啶雙(氟磺酰基)酰亞胺(N-ヘキサデシル-4-メチルピリジニウム ビス(フルオロスルホニル)イミド)、N-十二烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-ドデシルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)、N-十四烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-テトラデシルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)、N-十六烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-ヘキサデシルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)、N-十二烷基-4-甲基吡啶雙(三氟甲磺酰基)酰亞胺(N-ドデシル-4-メチルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)、N-十四烷基-4-甲基吡啶鎓雙(三氟甲磺酰基)酰亞胺(N-テトラデシル-4-メチルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)、N-十六烷基-4-甲基吡啶鎓雙(三氟甲磺酰基)酰亞胺(N-ヘキサデシル-4-メチルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)等等。Specific examples of the pyridinium salt used in the embodiment of the present invention can be appropriately selected from the combination of the aforementioned cation and anion. Specific examples of compounds composed of cations and anions are: N-dodecylpyridine hexafluorophosphate (N-dodecylpyridine hexafluorophosphate), N-tetradecylpyridine hexafluorophosphate (N-tetradecylpyridine hexafluorophosphate)ヘキフルロホフェート), N-hexadecylpyridinium hexafluorophosphate (N-Polypyridine hexafluorophosphate), ヘキキササフルオフルオロホード4-fluoro-dodecylpyridine-4-fluoro-dodecylpyridine hexafluorophosphate -メチルピリジニウム ヘキサフルオロホスフェート), N-tetradecyl-4-methylpyridine hexafluorophosphate (N-テトラデシル-4-メチルピリジニ ウチルピリジニ ウチルピリジニ ウチルピリジニ ウチルピリジニ ウサフルオスフェート) Hexafluorophosphate (N-ヘキサデシル-4-メチルピリジニウム ヘキサフルオロホスフェート), N-dodecylpyridine bis(fluorosulfonyl)imide (N-ムササピルジルジ) Tetraalkylpyridine bis(fluorosulfonyl)imide (N-tetradexyl bis(fluorosulfonyl)imide), N-hexadecylpyridine bis(fluorosulfonyl)imide (フルオロスルホニル) イミド), N-dodecyl-4-methylpyridine bis(fluorosulfonyl)imide (N-dodecyl-4-methylpyridine bis(fluorosulfonyl)imide) 4-methylpyridine bis(fluorosulfonyl)imide (N-Tetradisil-4-Melbrimide), N-hexadecyl-4-methylpyridine bis(fluorosulfonyl) ) Imide (N-ヘキサデシル-4-メチルピリジニウム ビス (フルオロスルホニル) イミド), N-dodecylpyridine bis(trifluoromethanesulfonyl)imide (N-チタチスニピルジルジルジルジ) Imedo), N-tetradecylpyridine bis(trifluoromethanesulfonyl)imide (N-tetradecylpyridine bis(trifluoromethanesulfonyl)), N-hexadecylpyridine bis(trifluoromethanesulfonyl) ) Imide (N-ヘキサデデデシルピリジニウム ビス (トリフルオロメタンスルホニル) imide), N-dodecyl-4-methylpyridine bis(trifluoromethanesulfonyl) imide (N-dodecyl-4-methylsulfonyl)ピリジニウム ビス (トリフルオロメリホニル) Imid), N-tetradecyl-4-methylpyridinium bis(trifluoromethanesulfonyl)imide (N-テトラデシル-4-メチルピピルピルピルピルピルピルピルピルピルピルピルピルピルホニル), N-hexadecyl-4-methylpyridine Onium bis(trifluoromethanesulfonyl)imide (N-ヘキササデシル- 4-メチルピリジニウム ビス (トリフルオロメニル) Imit) and so on.
吡啶鎓鹽為N-十二烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-ドデシルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)的結構式例如是:。The pyridinium salt is N-dodecylpyridine bis(trifluoromethanesulfonyl)imide. The structural formula of N-Dodecylpyridinium bis(trifluoromethanesulfonyl)imide is for example: .
吡啶鎓鹽為N-十六烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-ヘキサデシルピリジニウム ビス(トリフルオロメタンスルホニル)イミド)的結構式例如是:。The pyridinium salt is N-hexadecylpyridinium bis(trifluoromethanesulfonyl)imide (N-ヘキササデシルピリジニウム ビス (Trifulumorometain)). The structural formula is, for example: .
吡啶鎓鹽為N-十二烷基吡啶六氟磷酸鹽(N-ドデシルピリジニウム ヘキサフルオロホスフェート)的結構式例如是:。The pyridinium salt is N-dodecylpyridine hexafluorophosphate (N-dodecylpyridine hexafluorophosphate). The structural formula is for example: .
吡啶鎓鹽為N-十六烷基吡啶六氟磷酸鹽(N-ヘキサデシルピリジニウム へキサフルオロホスフェート)的結構式例如是:。The pyridinium salt is N-hexadecylpyridinium hexafluorophosphate (N-ヘキサデシルピリジニウム へキサフルオロホスフェート), for example: .
吡啶鎓鹽為N-己基-4-甲基吡啶六氟磷酸鹽(N-ヘキシル-4-メチルピリジニウム ヘキサフルオロホスフェート)的結構式例如是:。The pyridinium salt is N-hexyl-4-methylpyridine hexafluorophosphate (N-ヘキシル-4-Melbyrijiniウム ヘキサフルオロオスフェート). The structural formula is, for example: .
吡啶鎓鹽為N-丁基-4-甲基吡啶六氟磷酸鹽(N-ブチル-4-メチルピリジニウム ヘキサフルオロホスフェート)的結構式例如是:。The pyridinium salt is N-butyl-4-methylpyridine hexafluorophosphate (N-Balber-4-Merberbrijini ウム ヘキサフルオロホスフェート). The structural formula is, for example: .
結構式(1)的吡啶鎓鹽的特徵在於,由R3 表示的烷基是長鏈。吡啶鎓鹽可由常見的製備方式製成,例如下列結構式(2)。The pyridinium salt of structural formula (1) is characterized in that the alkyl group represented by R 3 is a long chain. The pyridinium salt can be prepared by common preparation methods, such as the following structural formula (2).
…………….(2) …………….(2)
結構式(2)的R3 及R4 的界定同於結構式(1)的R3 及R4 的界定。結構式(2)相當於烷基溴化吡啶鎓(アルキルピリジニウムブロマイド)。通過對相當於LiX- (其中X- 如結構式(1)所界定)的鋰鹽進行離子交換反應,然後用水洗滌,將生成的溴化鋰轉移至水相,基於有機相的製備方法,可製成結構式(1)的吡啶鎓鹽。 此些吡啶鎓鹽可以單獨使用一種,也可以組合使用兩種以上。此外,吡啶鎓鹽的實例當然不限於上面列出的化合物。Define the structural formula R (2) R 3 and R 4 is the same in the formula (1) Definition of R 4 and 3. Structural formula (2) is equivalent to alkyl pyridinium bromide (alkyl pyridinium bromide). By corresponding to LiX - (wherein X - The structure of formula (1)) a lithium salt ion exchange reaction, then washed with water, the resulting aqueous phase is transferred to lithium bromide, prepared based on the organic phase, can be made The pyridinium salt of structural formula (1). These pyridinium salts may be used singly or in combination of two or more. In addition, examples of pyridinium salts are of course not limited to the compounds listed above.
然後,偏光膜前驅物100傳送至乾燥裝置500進行乾燥,從而得到偏光膜100'。乾燥裝置500可包含乾燥室510、乾燥輥輪520A、520B及/或送風機構530A、530B。乾燥輥輪520A、520B及/或送風機構530A、530B設置於乾燥室510內。乾燥輥輪520A、520B可具有加熱及/或吹送乾燥氣體的功能,藉此乾燥在其上傳送的偏光膜前驅物100。一實施例中,乾燥輥輪(包括乾燥輥輪520A及/或乾燥輥輪520B)為加熱輥輪。Then, the
在一些實施例中,乾燥輥輪的溫度例如是30°C至140°C。在一些實施例中,乾燥輥輪的溫度例如是40°C至100°C。在一些實施例中,乾燥輥輪的溫度例如是70°C至90°C。在一些實施例中,乾燥輥輪的溫度實質上低於使光學膜20受熱變質的溫度。舉例而言,在一些實施例中,光學膜20是聚乙烯醇(PVA)膜,則乾燥輥輪的溫度例如是等於或小於100°C。In some embodiments, the temperature of the drying roller is, for example, 30°C to 140°C. In some embodiments, the temperature of the drying roller is, for example, 40°C to 100°C. In some embodiments, the temperature of the drying roller is, for example, 70°C to 90°C. In some embodiments, the temperature of the drying roller is substantially lower than the temperature at which the optical film 20 is heated and deteriorated. For example, in some embodiments, the optical film 20 is a polyvinyl alcohol (PVA) film, and the temperature of the drying roller is, for example, equal to or less than 100°C.
一實施例中,送氣裝置(未顯示)連接至乾燥輥輪,且乾燥輥輪面向偏光膜前驅物100的輸送表面具有複數個出氣孔,送氣裝置傳送乾燥氣體至乾燥輥輪內,且乾燥氣體經由出氣孔從乾燥輥輪內往外沖吹至輸送表面之上的偏光膜前驅物100,以乾燥偏光膜前驅物100。偏光膜前驅物100位於乾燥輥輪520A與送風機構530A之間,並位於乾燥輥輪520B與送風機構530B之間。In one embodiment, an air supply device (not shown) is connected to the drying roller, and the conveying surface of the drying roller facing the
在一些實施例中,乾燥氣體的溫度例如是30°C至140°C。在一些實施例中,乾燥氣體的溫度例如是40°C至100°C。在一些實施例中,乾燥氣體的溫度例如是70°C至90°C。在一些實施例中,乾燥氣體的溫度實質上低於使光學膜20受熱變質的溫度。舉例而言,在一些實施例中,光學膜20是聚乙烯醇(PVA)膜,則乾燥氣體的溫度例如是等於或小於100°C。In some embodiments, the temperature of the drying gas is, for example, 30°C to 140°C. In some embodiments, the temperature of the drying gas is, for example, 40°C to 100°C. In some embodiments, the temperature of the drying gas is 70°C to 90°C, for example. In some embodiments, the temperature of the drying gas is substantially lower than the temperature at which the optical film 20 is heated and deteriorated. For example, in some embodiments, the optical film 20 is a polyvinyl alcohol (PVA) film, and the temperature of the drying gas is, for example, equal to or less than 100°C.
在一些實施例中,送風機構(包括送風機構530A及/或送風機構530B)送出的氣體溫度可高於或等於乾燥輥輪(包括乾燥輥輪520A及/或乾燥輥輪520B)的加熱溫度,或可高於或等於乾燥輥輪送出的氣體溫度。In some embodiments, the temperature of the air sent by the air supply mechanism (including the
在一實施例中,第一加濕加熱裝置300之加熱溫度等於或大於第二加濕加熱裝置400之加熱溫度。In one embodiment, the heating temperature of the first humidification and
在一些實施例中,乾燥裝置500的加熱溫度,或可高於或等於第一加濕加熱裝置300及/或第二加濕加熱裝置400的加熱溫度。在一實施例中,第一加濕加熱裝置300的加熱溫度為50°C,第二加濕加熱裝置400的加熱溫度為60°C,乾燥輥輪(包括乾燥輥輪520A及/或乾燥輥輪520B)的加熱溫度為70°C,送風機構(包括送風機構530A及/或送風機構530B)送出的氣體溫度為80°C。藉由對偏光膜前驅物100提供漸進式加熱,可以避免突然施加高熱而造成偏光膜前驅物100光學品質的損害。In some embodiments, the heating temperature of the
在一些實施例中,亦可選擇性的設置加熱裝置(圖未示)於乾燥室510,加熱裝置例如是紅外線發熱板,以維持乾燥室510於一固定溫度中。在一些實施例中,乾燥裝置500的乾燥室510是實質上密閉的空間。In some embodiments, a heating device (not shown in the figure) can be optionally provided in the drying
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to those defined by the attached patent scope.
100:偏光膜前驅物
100S1:第一偏光膜表面
100S2:第二偏光膜表面
100':偏光膜
200:製程槽
300:第一加濕加熱裝置
302:第一輥輪
304:第一液槽
306:第一溶液
400:第二加濕加熱裝置
402:第二輥輪
404:第二液槽
406:第二溶液
500:乾燥裝置
510:乾燥室
520A:乾燥輥輪
520B:乾燥輥輪
530A:送風機構
530B:送風機構100: Polarizing film precursor
100S1: The surface of the first polarizing film
100S2: The second polarizing film surface
100': Polarizing film
200: process slot
300: The first humidification and heating device
302: The first roller
304: first tank
306: first solution
400: The second humidification and heating device
402: second roller
404: second tank
406: second solution
500: Drying device
510: Drying
第1圖繪示用以製造偏光膜的系統及偏光膜的製造方法。Figure 1 shows a system for manufacturing a polarizing film and a manufacturing method of the polarizing film.
100:偏光膜前驅物100: Polarizing film precursor
100S1:第一偏光膜表面100S1: The surface of the first polarizing film
100S2:第二偏光膜表面100S2: The second polarizing film surface
100':偏光膜100': Polarizing film
200:製程槽200: process slot
300:第一加濕加熱裝置300: The first humidification and heating device
302:第一輥輪302: The first roller
304:第一液槽304: first tank
306:第一溶液306: first solution
400:第二加濕加熱裝置400: The second humidification and heating device
402:第二輥輪402: second roller
404:第二液槽404: second tank
406:第二溶液406: second solution
500:乾燥裝置500: Drying device
510:乾燥室510: Drying Room
520A:乾燥輥輪520A: Drying roller
520B:乾燥輥輪520B: Drying roller
530A:送風機構530A: Air supply mechanism
530B:送風機構530B: Air supply mechanism
Claims (16)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109112906A TWI727746B (en) | 2020-04-17 | 2020-04-17 | System and method for manufacturing polarizer, and polarizer manufactured by the same |
CN202011180227.0A CN112388997B (en) | 2020-04-17 | 2020-10-29 | System for manufacturing polarizing film, method for manufacturing polarizing film, and polarizing film manufactured thereby |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109112906A TWI727746B (en) | 2020-04-17 | 2020-04-17 | System and method for manufacturing polarizer, and polarizer manufactured by the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI727746B TWI727746B (en) | 2021-05-11 |
TW202141082A true TW202141082A (en) | 2021-11-01 |
Family
ID=74598469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109112906A TWI727746B (en) | 2020-04-17 | 2020-04-17 | System and method for manufacturing polarizer, and polarizer manufactured by the same |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN112388997B (en) |
TW (1) | TWI727746B (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006251588A (en) * | 2005-03-14 | 2006-09-21 | Katsuhiko Nose | Method and apparatus for manufacturing polarizing film |
JP2007199509A (en) * | 2006-01-27 | 2007-08-09 | Toshiyuki Nose | Method and apparatus for manufacturing polarizing film |
CN204142989U (en) * | 2014-09-23 | 2015-02-04 | 日东电工株式会社 | The manufacturing installation of light polarizing film |
JP6346307B2 (en) * | 2014-12-12 | 2018-06-20 | 住友化学株式会社 | Manufacturing method of polarizing film |
KR102587187B1 (en) * | 2015-05-26 | 2023-10-06 | 스미또모 가가꾸 가부시키가이샤 | Method for producing polarizing plate |
TWI553046B (en) * | 2015-08-28 | 2016-10-11 | 住華科技股份有限公司 | Method of manufacturing polarizer film |
KR102512665B1 (en) * | 2016-08-18 | 2023-03-21 | 스미또모 가가꾸 가부시키가이샤 | Process for producing polarizing film and apparatus for producing polarizing film |
TWI660205B (en) * | 2017-11-16 | 2019-05-21 | 住華科技股份有限公司 | Manufacturing method of polarizing plate |
-
2020
- 2020-04-17 TW TW109112906A patent/TWI727746B/en active
- 2020-10-29 CN CN202011180227.0A patent/CN112388997B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN112388997B (en) | 2022-12-23 |
CN112388997A (en) | 2021-02-23 |
TWI727746B (en) | 2021-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101663698B1 (en) | Preparing method for polarizer | |
TWI553046B (en) | Method of manufacturing polarizer film | |
CN105103013A (en) | Process for producing polarizing film | |
TW201333136A (en) | Adhesive composition, adhesive layer, polarizing film having adhesive layer, and image formation device | |
US11186775B2 (en) | Polymerizable liquid crystal composition, optically anisotropic layer, optical laminate, method for producing optical laminate, and image display device | |
CN104062701A (en) | Method Of Producing Polarizing Plate | |
CN103440988A (en) | Preparation method of hybridization solar battery for perovskite-like sensitized photoanode | |
JPWO2016060087A1 (en) | Polarizer and method for producing polarizer | |
KR20140075154A (en) | Crosslinking agent for preparing a polarizer and method of preparing a polarizer using the same | |
TWI727746B (en) | System and method for manufacturing polarizer, and polarizer manufactured by the same | |
JPWO2016047554A1 (en) | Manufacturing method of polarizer | |
JP6998428B2 (en) | Dye-based polarizing element or dye-based polarizing plate | |
JP4971119B2 (en) | Manufacturing method of polarizer | |
JPH06265727A (en) | Production of polarizing film | |
JPH07306316A (en) | Production of polarizing plate | |
JPH07104126A (en) | Production of polarizing film | |
JP2016027354A (en) | Laminated body for polarizing plate, polarizing plate including the same, and liquid crystal display device | |
JP6160198B2 (en) | Manufacturing method of polarizer | |
KR20230049506A (en) | Method and apparatus for forming perovskite layer using additive | |
JPH07306315A (en) | Production of polarizing plate | |
TWI825153B (en) | Manufacturing method of polarizer | |
JP5422875B2 (en) | Method for manufacturing anisotropic optical film | |
JP4654882B2 (en) | Anisotropic optical film manufacturing method, anisotropic optical film, and optical element | |
KR101938409B1 (en) | Method of preparing polarizer | |
KR20140144763A (en) | Preparing method of Polarizer |