TW202140747A - Phosphor particle, composite, light-emitting device and self-luminous display - Google Patents

Phosphor particle, composite, light-emitting device and self-luminous display Download PDF

Info

Publication number
TW202140747A
TW202140747A TW110110123A TW110110123A TW202140747A TW 202140747 A TW202140747 A TW 202140747A TW 110110123 A TW110110123 A TW 110110123A TW 110110123 A TW110110123 A TW 110110123A TW 202140747 A TW202140747 A TW 202140747A
Authority
TW
Taiwan
Prior art keywords
light
sheet
phosphor particles
fluororesin film
peak wavelength
Prior art date
Application number
TW110110123A
Other languages
Chinese (zh)
Inventor
三谷駿介
小林慶太
Original Assignee
日商電化股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商電化股份有限公司 filed Critical 日商電化股份有限公司
Publication of TW202140747A publication Critical patent/TW202140747A/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

A phosphor particle for a micro LED or mini LED, formed from β-SiAlON. A cured sheet produced using this phosphor particle by the following sheet production procedure exhibits the optical characteristics described below. <Sheet production procedure> (1) 40 parts by mass of the phosphor particle and 60 parts by mass of a silicone resin OE-6630 manufactured by Dow Corning Toray Co., Ltd. are subjected to an agitation and defoaming treatment using a planetary centrifugal mixer to obtain a uniform mixture. (2) A sheet material is obtained by applying the mixture obtained in (1) dropwise to a transparent first fluororesin film and overlaying an additional transparent second fluororesin film on the dropped material. The resulting sheet material is then shaped into an uncured sheet using rollers having a gap that is 50 µm greater than the total thickness of the first fluororesin film and the second fluororesin film. (3) The uncured sheet obtained in (2) is heated at 150°C for 60 minutes. Then, the first fluororesin film and the second fluororesin film are detached to obtain a cured sheet with a film thickness of 50±5 µm. <Optical characteristics> If the intensity at the peak wavelength of blue light emitted from a blue LED with a peak wavelength in a range from 450 nm to 460 nm is deemed Ii [W/nm], and when blue light is irradiated onto one surface of the cured sheet, if the intensity of the light emitted from the other surface of the cured sheet is deemed It [W/nm] for the peak wavelength in the range from 450 nm to 460 nm and Ip [W/nm] for the peak wavelength in the range from 500 nm to 560 nm, then It/Ii is 0.41 or less and Ip/Ii is 0.03 or greater.

Description

螢光體粒子、複合體、發光裝置、及自發光型顯示器Phosphor particles, composites, light-emitting devices, and self-luminous displays

本發明關於螢光體粒子、複合體、發光裝置及自發光型顯示器。更具體而言,關於Micro LED用或Mini LED用之螢光體粒子、使用該粒子之複合體、具備該複合體之發光裝置、及具備該發光裝置之自發光型顯示器。The present invention relates to phosphor particles, composites, light-emitting devices, and self-luminous displays. More specifically, it relates to phosphor particles for Micro LED or Mini LED, a composite using the particles, a light-emitting device provided with the composite, and a self-luminous display provided with the light-emitting device.

就較新的顯示器而言,Micro LED顯示器係為已知。非專利文獻1中,係將Micro LED顯示器分類為採用晶片尺寸未達100μm見方之LED(Micro LED)的自發光顯示器。於Micro LED中,在藍色LED上放置將藍色光變換成紅色光、綠色光的螢光體,藉此能獲得RGB三色。在非專利文獻2的圖式11等,係對Micro LED的示意性結構有所介紹。 Micro LED顯示器,係不使用液晶快門、偏光板的自發光型,這點與習知的「LED背光之液晶電視」在根本上有所不同。結構簡單,原則上光提取效率高,且視角的限制極少。As far as newer displays are concerned, Micro LED displays are known. In Non-Patent Document 1, Micro LED displays are classified as self-luminous displays using LEDs (Micro LEDs) with a chip size of less than 100 μm square. In the Micro LED, a phosphor that converts blue light into red and green light is placed on the blue LED to obtain the three colors of RGB. In Figure 11 of Non-Patent Document 2, the schematic structure of the Micro LED is introduced. The Micro LED display is a self-luminous type that does not use a liquid crystal shutter or polarizing plate. This is fundamentally different from the conventional "LED backlight LCD TV". The structure is simple, the light extraction efficiency is high in principle, and the viewing angle is very limited.

又,亦知曉「Mini LED」這種被視為與Micro LED類似的技術。就Mini LED及使用了Mini LED的顯示器而言,除了晶片尺寸為100μm以上(更具體而言為100μm以上且200μm以下)以外,係與Micro LED及Micro LED顯示器相同(亦可參照非專利文獻3中記載之分類)。亦即,使用了Mini LED的顯示器基本上也是自發光型。 [先前技術文獻] [非專利文獻]In addition, we also know that "Mini LED" is a technology that is regarded as similar to Micro LED. Mini LEDs and displays using Mini LEDs are the same as Micro LED and Micro LED displays except that the chip size is 100 μm or more (more specifically, 100 μm or more and 200 μm or less) (see also Non-Patent Document 3) Classification recorded in). In other words, displays using Mini LEDs are basically self-luminous. [Prior Technical Literature] [Non-Patent Literature]

[非專利文獻1]2019次世代顯示器技術及關聯材料/製程之最新動向調查(Fuji Chimera Research Institute, Inc) [非專利文獻2]Appl. Sci. 2018, 8, 1557 [非專利文獻3]The Journal of The Institute of Image Information and Television Engineers Vol. 73, No. 5, pp. 939~942(2019)[Non-Patent Document 1] A survey of the latest trends in 2019 next-generation display technology and related materials/processes (Fuji Chimera Research Institute, Inc) [Non-Patent Document 2] Appl. Sci. 2018, 8, 1557 [Non-Patent Document 3] The Journal of The Institute of Image Information and Television Engineers Vol. 73, No. 5, pp. 939~942 (2019)

[發明所欲解決之課題][The problem to be solved by the invention]

如上述,亦有於Micro LED或Mini LED中,在藍色LED上放置將藍色光變換成紅色光、綠色光的光變換層,藉此獲得RGB三色的方式。更具體而言,亦有在藍色LED上設置包含螢光體等光變換材料之螢光體片材的情況。As mentioned above, in Micro LED or Mini LED, a light conversion layer that converts blue light into red light and green light is placed on the blue LED to obtain the three colors of RGB. More specifically, there is also a case where a phosphor sheet containing a light conversion material such as a phosphor is provided on the blue LED.

若考慮所謂的「顯示器」的用途,則Micro LED或Mini LED用之螢光體,除了發光效率高以外,亦能適切地控制例如與光的「透射」有關的指標較為理想。但,根據本案發明人們的見解,例如就習知的用於照明用途的螢光體而言,係完全沒有考慮應用到顯示器的設計,並不適用於Micro LED或Mini LED。Considering the use of the so-called "display", it is ideal for the phosphors used for Micro LED or Mini LED to have high luminous efficiency and to appropriately control indicators related to light "transmission", for example. However, according to the insights of the inventors of the present case, for example, as far as the conventional phosphors for lighting purposes are concerned, the design of the display is not considered at all, and it is not suitable for Micro LED or Mini LED.

本發明係鑑於此種情形而完成者。本發明之目的之一,係提供能理想地使用於Micro LED顯示器及/或Mini LED顯示器的螢光體粒子。 [解決課題之手段]The present invention was completed in view of this situation. One of the objectives of the present invention is to provide phosphor particles that can be ideally used in Micro LED displays and/or Mini LED displays. [Means to solve the problem]

本案發明人們,完成了如下提供之發明而解決上述課題。The inventors of the present case have completed the invention provided below to solve the above-mentioned problems.

根據本發明, 提供一種螢光體粒子,係由β型矽鋁氮氧化物構成之Micro LED或Mini LED用的螢光體粒子, 藉由以下片材製作程序製成的硬化片材,滿足下列光學特性。According to the present invention, Provide a kind of phosphor particles, which are phosphor particles for Micro LED or Mini LED made of β-type silicon aluminum oxynitride, The hardened sheet made by the following sheet production procedure satisfies the following optical characteristics.

<片材製作程序> (1)使用自轉公轉混合機將40質量份之該螢光體粒子、及60質量份之東麗道康寧公司製的聚矽氧樹脂OE-6630進行攪拌處理及脫泡處理,藉此獲得均勻的混合物。 (2)獲得將該(1)獲得之混合物滴加於透明的第一氟樹脂薄膜,並在該滴加物上再重疊透明的第二氟樹脂薄膜而成的片狀物。將此片狀物使用具有該第一氟樹脂薄膜與該第二氟樹脂薄膜之厚度合計再加上50μm之間隙的滾輪,成形為未硬化片材。 (3)將該(2)獲得之未硬化片材以150℃、60分鐘的條件加熱。之後,將該第一氟樹脂薄膜及該第二氟樹脂薄膜予以剝離,獲得膜厚50±5μm的硬化片材。 <光學特性> 令由在450nm至460nm的範圍內具有峰值波長的藍色LED發出之藍色光在峰值波長時的強度為Ii[W/nm],並令該藍色光照射於該硬化片材的其中一面側時從該硬化片材的另一面側發出的光在450nm至460nm的範圍內的峰值波長的強度為It[W/nm]且在500nm至560nm的範圍內的峰值波長的強度為Ip[W/nm]時; It/Ii為0.41以下,且Ip/Ii為0.03以上。<Sheet production procedure> (1) Using a rotating and revolving mixer, 40 parts by mass of the phosphor particles and 60 parts by mass of Toray Dow Corning's polysiloxane resin OE-6630 are subjected to stirring treatment and defoaming treatment to obtain a uniform mixture. (2) Obtain a sheet in which the mixture obtained in (1) is dropped on a transparent first fluororesin film, and a transparent second fluororesin film is superposed on the drops. This sheet was formed into an uncured sheet using a roller having the total thickness of the first fluororesin film and the second fluororesin film plus a gap of 50 μm. (3) The uncured sheet obtained in (2) was heated at 150°C for 60 minutes. After that, the first fluororesin film and the second fluororesin film were peeled off to obtain a cured sheet having a film thickness of 50±5 μm. <Optical characteristics> Let the intensity of the blue light emitted by the blue LED with a peak wavelength in the range of 450nm to 460nm at the peak wavelength be Ii[W/nm], and when the blue light is irradiated on one side of the hardened sheet The intensity of the peak wavelength of the light emitted from the other side of the cured sheet in the range of 450nm to 460nm is It[W/nm] and the intensity of the peak wavelength in the range of 500nm to 560nm is Ip[W/nm ]Time; It/Ii is 0.41 or less, and Ip/Ii is 0.03 or more.

又,根據本發明, 提供一種複合體,具備上述螢光體粒子,以及將上述螢光體粒子予以密封的密封材料。Also, according to the present invention, Provided is a composite including the phosphor particles described above, and a sealing material that seals the phosphor particles.

又,根據本發明, 提供一種發光裝置,具備發出激發光的發光元件,以及將上述激發光的波長予以變換之上述複合體。Also, according to the present invention, Provided is a light-emitting device including a light-emitting element that emits excitation light, and the composite body that converts the wavelength of the excitation light.

又,根據本發明, 提供一種自發光型顯示器,具備上述發光裝置。 [發明之效果]Also, according to the present invention, Provided is a self-luminous display including the above-mentioned light-emitting device. [Effects of the invention]

藉由本發明,提供能理想地使用於Micro LED顯示器及/或Mini LED顯示器的螢光體粒子。With the present invention, phosphor particles that can be ideally used in Micro LED displays and/or Mini LED displays are provided.

以下,針對本發明之實施形態,一邊參照圖式一邊進行詳細說明。 在所有的圖式中,對同樣的構成要素標註同樣的符號,並適當地將說明省略。 為了避免複雜化,會有(i)在相同圖式中存在多個相同構成要素時,僅對其中之一標註符號,而不對全部皆標註符號的情況、(ii)尤其在圖2之後,不再次對與圖1相同的構成要素標註符號的情況。 所有的圖式僅為說明所用。圖式中之各構件的形狀、尺寸比等並不一定對應於現實的物品。Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings, the same components are denoted by the same symbols, and the description will be omitted as appropriate. In order to avoid complication, there may be (i) when there are multiple identical components in the same drawing, only one of them is marked with a symbol, and not all of them are marked with a symbol, (ii) especially after Figure 2, not Once again, the same constituent elements as in FIG. 1 are labeled with symbols. All the figures are for illustration purposes only. The shapes, size ratios, etc. of the various components in the diagram do not necessarily correspond to actual objects.

在本說明書中,數值範圍的說明中之「X~Y」的記載,除非另有指明,係表示X以上且Y以下。例如「1~5質量%」係指「1質量%以上且5質量%以下」。In this specification, the description of "X to Y" in the description of the numerical range means X or more and Y or less unless otherwise specified. For example, "1 to 5 mass%" means "1 mass% or more and 5 mass% or less".

本說明書中,「LED」表示Light Emitting Diode(發光二極體)的縮寫。 本說明書中,「螢光體粒子」的用語,根據文脈,有時會代表係螢光體粒子之集團的螢光體粉末。In this manual, "LED" stands for Light Emitting Diode (Light Emitting Diode). In this manual, the term "phosphor particles" sometimes refers to phosphor powder that is a group of phosphor particles, depending on the context.

<Micro LED用或Mini LED用之螢光體粒子> 本實施形態之螢光體粒子,係Micro LED用或Mini LED用。亦即,本實施形態之螢光體粒子,係用於將從Micro LED或Mini LED發出之光的顏色變換為其他顏色的用途。有關Micro LED、Mini LED的定義係記載於上述非專利文獻1等之中。 本實施形態之螢光體粒子,係由β型矽鋁氮氧化物構成。藉此,本實施形態之螢光體粒子,通常係將藍色光變換為綠色光。 使用本實施形態之螢光體粒子並藉由以下片材製作程序製成的硬化片材,係滿足下列光學特性。<Phosphor particles for Micro LED or Mini LED> The phosphor particles of this embodiment are used for Micro LED or Mini LED. That is, the phosphor particles of this embodiment are used for the purpose of converting the color of light emitted from Micro LED or Mini LED to other colors. The definitions of Micro LED and Mini LED are described in Non-Patent Document 1 and others. The phosphor particles of this embodiment are made of β-type silicon aluminum oxynitride. In this way, the phosphor particles of this embodiment usually convert blue light into green light. The hardened sheet made by using the phosphor particles of the present embodiment through the following sheet production procedure satisfies the following optical characteristics.

<片材製作程序> (1)使用自轉公轉混合機將40質量份之該螢光體粒子、及60質量份之東麗道康寧公司製的聚矽氧樹脂OE-6630進行攪拌處理及脫泡處理,藉此獲得均勻的混合物。 (2)獲得將該(1)獲得之混合物滴加於透明的第一氟樹脂薄膜,並在該滴加物上再重疊透明的第二氟樹脂薄膜而成的片狀物。將此片狀物使用具有第一氟樹脂薄膜與第二氟樹脂薄膜之厚度合計再加上50μm之間隙的滾輪,成形為未硬化片材。 在此,所謂「使用具有間隙的滾輪,成形為未硬化片材」,係指使片狀物通過相向設置的一組滾輪之間的間隙。 又,第一氟樹脂薄膜與第二氟樹脂薄膜較理想為相同的薄膜。此時,滾輪的間隙為1片薄膜的厚度的2倍再加上50μm。 (3)將該(2)獲得之未硬化片材以150℃、60分鐘的條件加熱。之後,將第一氟樹脂薄膜及第二氟樹脂薄膜予以剝離,獲得膜厚50±5μm的硬化片材。<Sheet production procedure> (1) Using a rotating and revolving mixer, 40 parts by mass of the phosphor particles and 60 parts by mass of Toray Dow Corning's polysiloxane resin OE-6630 are subjected to stirring treatment and defoaming treatment to obtain a uniform mixture. (2) Obtain a sheet in which the mixture obtained in (1) is dropped on a transparent first fluororesin film, and a transparent second fluororesin film is superposed on the drops. This sheet was formed into an uncured sheet using a roller having the total thickness of the first fluororesin film and the second fluororesin film plus a gap of 50 μm. Here, the so-called "using rollers with gaps to form an uncured sheet" refers to passing the sheet through the gap between a set of rollers arranged opposite to each other. In addition, the first fluororesin film and the second fluororesin film are preferably the same film. At this time, the gap between the rollers is twice the thickness of one film plus 50 μm. (3) The uncured sheet obtained in (2) was heated at 150°C for 60 minutes. After that, the first fluororesin film and the second fluororesin film were peeled off to obtain a cured sheet with a film thickness of 50±5 μm.

<光學特性> 令由在450nm至460nm的範圍內具有峰值波長的藍色LED發出之藍色光在峰值波長時的強度為Ii[W/nm],並令該藍色光照射於該硬化片材的其中一面側時從該硬化片材的另一面側發出的光在450nm至460nm的範圍內的峰值波長的強度為It[W/nm]且在500nm至560nm的範圍內的峰值波長的強度為Ip[W/nm]時; It/Ii為0.41以下,且Ip/Ii為0.03以上。<Optical characteristics> Let the intensity of the blue light emitted by the blue LED with a peak wavelength in the range of 450nm to 460nm at the peak wavelength be Ii[W/nm], and when the blue light is irradiated on one side of the hardened sheet The intensity of the peak wavelength of the light emitted from the other side of the cured sheet in the range of 450nm to 460nm is It[W/nm] and the intensity of the peak wavelength in the range of 500nm to 560nm is Ip[W/nm ]Time; It/Ii is 0.41 or less, and Ip/Ii is 0.03 or more.

本案發明人們認為,在獲得較理想的Micro LED用或Mini LED用的螢光體粒子時,重要的是將以接近於實際的顯示器之「透射光」來進行評價的特性作為指標,來設計螢光體粒子。 基於此考量,本案發明人們採用以上述<片材製作程序>中記載的方法製作包含由β型矽鋁氮氧化物構成之螢光體粒子及特定樹脂的片材,然後將該片材放置於藍色LED上時有關透射光的指標作為設計指標。具體而言,分別將對應於上述片材之藍色光之吸收程度的指標設定為It/Ii,並將對應於上述片材之將藍色光變換為綠色光之變換效率之程度的指標設定為Ip/Ii。 又,本案發明人們,發現It/Ii為0.41以下,且Ip/Ii為0.03以上的螢光體粒子,係可較理想地使用於Micro LED或Mini LED中。使用此種螢光體粒子構成Micro LED或Mini LED,係與顯示器的高色域化有關。The inventors of the present case believe that when obtaining ideal phosphor particles for Micro LED or Mini LED, it is important to use the characteristics that are close to the actual "transmitted light" of the display to be evaluated as an index to design the phosphor. Light body particles. Based on this consideration, the inventors of the present case used the method described in the above "Sheet Making Procedure" to make a sheet containing phosphor particles composed of β-type silicon aluminum oxynitride and a specific resin, and then place the sheet on The indicators related to the transmitted light when on the blue LED are used as design indicators. Specifically, the index corresponding to the degree of absorption of the blue light of the sheet is set to It/Ii, and the index corresponding to the degree of conversion efficiency of the sheet to convert blue light to green light is set to Ip /Ii. In addition, the inventors of the present case have discovered that phosphor particles with an It/Ii of 0.41 or less and an Ip/Ii of 0.03 or more are ideally used in Micro LEDs or Mini LEDs. The use of such phosphor particles to form Micro LED or Mini LED is related to the high color gamut of the display.

順帶一提,若在片材製作時無法取得東麗道康寧公司製之聚矽氧樹脂OE-6630的話,就代替品而言,可使用信越化學公司製之LED用聚矽氧材料SCR-1011、SCR-1016或KER-6100/CAT-PH(使用量與OE-6630相同)。根據本案發明人們的見解,即便使用這些信越化學公司製之材料作為OE-6630的替代品,It/Ii的值及Ip/Ii的值也幾乎不會改變。By the way, if the polysiloxane resin OE-6630 manufactured by Toray Dow Corning Company cannot be obtained during sheet production, as a substitute, the polysiloxane material SCR-1011 for LEDs manufactured by Shin-Etsu Chemical Co., Ltd. can be used. SCR-1016 or KER-6100/CAT-PH (the amount used is the same as OE-6630). According to the findings of the inventors of this case, even if these materials manufactured by Shin-Etsu Chemical Co., Ltd. are used as a substitute for OE-6630, the value of It/Ii and Ip/Ii will hardly change.

在獲得本實施形態之螢光體粒子時,除了選擇適切的素材以外,選擇適切的製造方法、製造條件也是重要的。藉由適切地選擇製造方法、製造條件,能適切地控制粒徑、粒子形狀等,能輕易獲得It/Ii為0.41以下且Ip/Ii為0.03以上的螢光體粒子。 於下描述製造條件的細節,例如藉由適切地調整下述之低溫煅燒步驟(退火步驟)、酸處理步驟、粉碎步驟等的條件,可獲得It/Ii為0.41以下且Ip/Ii為0.03以上的螢光體粒子。When obtaining the phosphor particles of the present embodiment, in addition to selecting appropriate materials, it is also important to select appropriate manufacturing methods and manufacturing conditions. By appropriately selecting the manufacturing method and manufacturing conditions, the particle size, particle shape, etc. can be appropriately controlled, and phosphor particles with an It/Ii of 0.41 or less and Ip/Ii of 0.03 or more can be easily obtained. The details of the manufacturing conditions are described below. For example, by appropriately adjusting the conditions of the following low-temperature calcination step (annealing step), acid treatment step, crushing step, etc., It/Ii of 0.41 or less and Ip/Ii of 0.03 or more can be obtained. Phosphor particles.

It/Ii只要是0.41以下即可,為0.40以下較為理想,為0.39以下更為理想,為0.30以下更甚理想,為0.20以下特別理想。就It/Ii的下限而言,考量實際上設計的觀點,例如為0.01。 Ip/Ii只要是0.03以上即可,為0.04以上較為理想,為0.05以上更為理想。就Ip/Ii的上限而言,考量實際上設計的觀點,例如為0.5。It/Ii may be 0.41 or less, preferably 0.40 or less, more preferably 0.39 or less, more preferably 0.30 or less, and particularly preferably 0.20 or less. As for the lower limit of It/Ii, considering the actual design point of view, it is, for example, 0.01. Ip/Ii may be 0.03 or more, preferably 0.04 or more, and more preferably 0.05 or more. As for the upper limit of Ip/Ii, considering the actual design point of view, it is 0.5, for example.

以下,繼續關於本實施形態之螢光體粒子的說明。Hereinafter, the description of the phosphor particles of this embodiment will be continued.

(β型矽鋁氮氧化物螢光體之通式) 本實施形態之螢光體粒子,係由以通式Si12-a Ala Ob N16-b :Eux (式中,0<a≦3;0<b≦3;0<x≦0.1)表示之β型矽鋁氮氧化物螢光體構成。(General formula of β-type silicon aluminum oxynitride phosphor) The phosphor particles of this embodiment are composed of the general formula Si 12-a Al a O b N 16-b : Eu x (where 0< a≦3; 0<b≦3; 0<x≦0.1) represents the structure of β-type silicon aluminum oxynitride phosphor.

(粒徑) 令本實施形態之螢光體粒子經雷射繞射散射法測定之體積基準累積50%的粒徑及體積基準累積90%的粒徑分別為D50 及D90 時,D50 為5μm以下較為理想,為0.2μm以上且5μm以下更為理想,為0.5μm以上且3μm以下更甚理想。D90 為10μm以下較為理想,為8μm以下更為理想,為5μm以下更甚理想。 D50 及D90 ,係將螢光體粒子0.5g投入混合有六偏磷酸鈉0.05質量%的離子交換水溶液100ml中,並對其使用振盪頻率19.5±1kHz、振幅31±5μm的超音波均化器(homogenizer),將尖端配置於液體的中央部進行3分鐘之分散處理後而獲得的液體測得的數值。(Particle size) When the volume-based cumulative 50% particle size and the volume-based cumulative 90% particle size of the phosphor particles of this embodiment measured by the laser diffraction scattering method are D 50 and D 90 , respectively, D 50 It is preferably 5 μm or less, more preferably 0.2 μm or more and 5 μm or less, and more preferably 0.5 μm or more and 3 μm or less. D 90 is preferably 10 μm or less, more preferably 8 μm or less, and more preferably 5 μm or less. D 50 and D 90 , 0.5g of phosphor particles are put into 100ml of ion-exchange aqueous solution mixed with 0.05% by mass of sodium hexametaphosphate, and homogenized by ultrasonic wave with oscillation frequency of 19.5±1kHz and amplitude of 31±5μm A homogenizer is a value measured on a liquid obtained by dispersing the tip in the center of the liquid for 3 minutes.

(漫反射率) 就本實施形態之螢光體粒子而言,對於波長800nm的光的漫反射率為85%以上較為理想,為90%以上更為理想。對於波長800nm的光的漫反射率的下限值,例如為80%。(Diffuse reflectance) With regard to the phosphor particles of the present embodiment, the diffuse reflectance of light with a wavelength of 800 nm is preferably 85% or more, and more preferably 90% or more. The lower limit of the diffuse reflectance of light with a wavelength of 800 nm is, for example, 80%.

用係β型矽鋁氮氧化物螢光體之活化元素的Eu本來不會吸收的光(例如波長800nm的光)照射螢光體來測定漫反射率,藉此能確認螢光體的結晶缺陷、本發明之β型矽鋁氮氧化物以外之化合物(亦稱作異相)所致之多餘的光吸收。 例如藉由進行強烈地機械性粉碎來獲得小粒徑的螢光體,會同時增加螢光體粒子之表面的結晶缺陷。因此,波長800nm的光變得容易被該缺陷吸收。其結果,有時會使漫反射率降低至未達95%。The phosphor is irradiated with light (for example, light with a wavelength of 800 nm), which is the activating element of the β-type silicon aluminum oxynitride phosphor, to measure the diffuse reflectance, thereby confirming the crystal defects of the phosphor , Excess light absorption caused by compounds other than the β-type silicon aluminum oxynitride of the present invention (also called out-of-phase). For example, by intensive mechanical pulverization to obtain a phosphor with a small particle size, the crystal defects on the surface of the phosphor particles will be increased at the same time. Therefore, light with a wavelength of 800 nm becomes easy to be absorbed by the defect. As a result, the diffuse reflectance may be reduced to less than 95%.

就本實施形態之螢光體粒子而言,對於波長600nm的光的光吸收率為10%以下較為理想,為8%以下更為理想,為5%以下更甚理想。對於波長600nm的光的光吸收率的下限,就現實而言為0.5%。 與波長800nm的光一樣為係螢光體之活化元素的Eu本來不會吸收之波長的光,尚有波長600nm的光。藉由評價波長600nm的光的吸收率的多寡,可確認螢光體的缺陷等所致之多餘的光的吸收程度。For the phosphor particles of this embodiment, the light absorption rate for light with a wavelength of 600 nm is preferably 10% or less, more preferably 8% or less, and more preferably 5% or less. The lower limit of the light absorption rate of light with a wavelength of 600 nm is practically 0.5%. Like light with a wavelength of 800nm, Eu, which is an activating element of the phosphor, does not absorb light at a wavelength that would not otherwise be absorbed, but there is still light with a wavelength of 600nm. By evaluating the absorptivity of light with a wavelength of 600nm, it is possible to confirm the degree of absorption of excess light due to defects in the phosphor.

就本實施形態之螢光體粒子而言,455nm光吸收率為40%以上且80%以下較為理想。藉由將455nm光吸收率設計在此數值範圍內,因為來自於藍色LED的光不會不必要地通過,所以能較理想地使用於Micro LED顯示器或Mini LED顯示器。For the phosphor particles of this embodiment, the 455 nm light absorption rate is preferably 40% or more and 80% or less. By designing the 455nm light absorption rate within this value range, because the light from the blue LED will not pass through unnecessarily, it can be ideally used in Micro LED displays or Mini LED displays.

就本實施形態之螢光體粒子而言,內部量子效率為50%以上較為理想。藉由使內部量子效率為50%以上,來自於藍色LED的光會被適度地吸收,並放出充分的綠色光。內部量子效率的上限並無特定,例如為90%。For the phosphor particles of this embodiment, the internal quantum efficiency is preferably 50% or more. By making the internal quantum efficiency above 50%, the light from the blue LED will be moderately absorbed, and sufficient green light will be emitted. The upper limit of the internal quantum efficiency is not specified, and is, for example, 90%.

就本實施形態之螢光體粒子而言,外部量子效率為20%以上較為理想。藉由使外部量子效率為20%以上,來自於藍色LED的光會被適度地吸收,並放出充分的綠色光。外部量子效率的上限並無特定,例如為72%以下。For the phosphor particles of this embodiment, the external quantum efficiency is preferably 20% or more. By making the external quantum efficiency above 20%, the light from the blue LED will be moderately absorbed, and sufficient green light will be emitted. The upper limit of the external quantum efficiency is not specified, but is 72% or less, for example.

(螢光體粒子之製造方法) 本實施形態之螢光體粒子之製造方法並無特別限定。可藉由適切的素材的選擇再加上選擇適切的製造方法、製造條件來製造。(Method of manufacturing phosphor particles) The manufacturing method of the phosphor particles of this embodiment is not particularly limited. It can be manufactured by selecting appropriate materials plus selecting appropriate manufacturing methods and manufacturing conditions.

本實施形態之螢光體粒子,例如可藉由以下步驟來製造。 ・將混合起始原料後獲得之原料粉末予以煅燒的煅燒步驟, ・在將煅燒步驟獲得之煅燒物暫時粉末化後實施的低溫煅燒步驟(退火步驟), ・將在低溫煅燒步驟(退火步驟)後獲得之低溫煅燒粉末以酸來進行處理的酸處理步驟, ・將酸處理步驟後之粉末予以粉碎而進行微粉化的粉碎步驟,及 ・將在粉碎步驟產生的微粉末除去的傾析步驟。The phosphor particles of this embodiment can be manufactured by the following steps, for example. ・The calcination step of calcining the raw material powder obtained after mixing the starting materials, ・The low-temperature calcination step (annealing step) performed after temporarily pulverizing the calcined product obtained in the calcination step, ・The acid treatment step in which the low-temperature calcined powder obtained after the low-temperature calcining step (annealing step) is treated with acid, ・Crush the powder after the acid treatment step to perform the pulverization step of micronization, and ・A decantation step to remove the fine powder generated in the pulverization step.

順帶一提,本實施形態中,所謂「步驟」,不僅是包括獨立的步驟,即便與其他步驟無法明確區分,只要能達成該步驟所期望的目的則亦包括在本用語中。By the way, in this embodiment, the so-called "step" not only includes independent steps, even if it is indistinguishable from other steps, it is included in this term as long as it can achieve the desired purpose of the step.

就本案發明人們的見解而言,尤其藉由適切地進行酸處理步驟後之粉碎步驟,便可輕易地製造It/Ii為0.41以下,且Ip/Ii為0.03以上的螢光體粒子。此種製造方法,係與習知的β型矽鋁氮氧化物螢光體之製造方法相異。但,本實施形態之螢光體粒子,在採用了上述製法上的獨創點的前提下,針對其他具體的製造條件,則可採用各種條件。According to the findings of the inventors of the present application, it is possible to easily produce phosphor particles having an It/Ii of 0.41 or less and an Ip/Ii of 0.03 or more by appropriately performing the pulverization step after the acid treatment step. This manufacturing method is different from the conventional manufacturing method of β-type silicon aluminum oxynitride phosphor. However, in the phosphor particles of this embodiment, various conditions can be adopted for other specific manufacturing conditions, provided that the originality of the above-mentioned manufacturing method is adopted.

以下,分別針對上述步驟進行說明。Hereinafter, the above steps will be described respectively.

・煅燒步驟 在煅燒步驟中,將混合起始原料而獲得之原料粉末予以煅燒。 原料粉末,包含銪化合物、氮化矽及氮化鋁較為理想。氮化矽及鋁化合物係用於形成β型矽鋁氮氧化物之骨架的材料,銪化合物係用於形成發光中心的材料。 原料粉末,可更含有β型矽鋁氮氧化物。β型矽鋁氮氧化物,係會成為骨材或核的材料。 原料粉末中含有之上述各成分的形態,並不特別限定,皆為粉末狀較為理想。・Calcination step In the calcining step, the raw material powder obtained by mixing the starting materials is calcined. The raw material powders preferably include europium compounds, silicon nitride, and aluminum nitride. Silicon nitride and aluminum compounds are materials used to form the framework of β-type silicon aluminum oxynitride, and europium compounds are materials used to form luminescent centers. The raw material powder may further contain β-type silicon aluminum oxynitride. β-type silicon aluminum oxynitride is a material that will become aggregates or cores. The form of the above-mentioned components contained in the raw material powder is not particularly limited, and it is preferable that they are all in powder form.

就銪化合物而言,可列舉如含銪之氧化物、含銪之氫氧化物、含銪之氮化物、含銪之氮氧化物、含銪之鹵化物等。這些可單獨使用或將2種以上組合使用。它們之中,以分別單獨使用氧化銪、氮化銪及氟化銪較為理想,單獨使用氧化銪更為理想。The europium compound includes, for example, europium-containing oxides, europium-containing hydroxides, europium-containing nitrides, europium-containing oxynitrides, and europium-containing halides. These can be used individually or in combination of 2 or more types. Among them, it is preferable to use europium oxide, europium nitride, and europium fluoride separately, and it is more desirable to use europium oxide separately.

煅燒步驟中,就銪而言,可分類為固溶於β型矽鋁氮氧化物中者、揮發者、及作為異相成分而殘存者。含有銪之異相成分能以酸處理等予以除去。但,在太大量地生成時,酸處理會生成不溶的成分,亮度會降低。又,只要是不會吸收多餘的光的異相,則為殘存狀態亦可,此異相中亦可含有銪。另外,在多次煅燒步驟的煅燒之前添加銪化合物的時候,亦可將銪化合物以外之β型矽鋁氮氧化物螢光體原料與銪化合物一起添加。In the calcination step, europium can be classified into those that are solid-soluble in β-type silicon aluminum oxynitride, those that are volatile, and those that remain as heterogeneous components. The heterogeneous components containing europium can be removed by acid treatment or the like. However, when it is produced in a large amount, the acid treatment produces insoluble components and the brightness decreases. Moreover, as long as it is a different phase that does not absorb excess light, it may be in a residual state, and europium may be contained in this different phase. In addition, when the europium compound is added before the calcination in the multiple calcination steps, the raw material of the β-type silicon aluminum oxynitride phosphor other than the europium compound may be added together with the europium compound.

使用之銪的總量並不特別限定,為最終獲得之β型矽鋁氮氧化物螢光體中固溶之銪量的3倍以上較為理想,為4倍以上更為理想。 又,原料粉末中含有之銪的總量並不特別限定,為最終獲得之β型矽鋁氮氧化物螢光體中固溶之銪量的18倍以下較為理想。藉此,可使酸處理所致之不溶的異相成分的生成量降低,可使獲得之β型矽鋁氮氧化物螢光體的亮度更為改善。The total amount of europium used is not particularly limited, but it is preferably at least 3 times the amount of europium in solid solution in the β-type silicon aluminum oxynitride phosphor finally obtained, and more preferably at least 4 times. In addition, the total amount of europium contained in the raw material powder is not particularly limited, and it is preferably 18 times or less the amount of europium in solid solution in the β-type silicon aluminum oxynitride phosphor finally obtained. Thereby, the amount of insoluble heterogeneous components produced by the acid treatment can be reduced, and the brightness of the obtained β-type silicon aluminum oxynitride phosphor can be improved.

煅燒步驟中,就包含銪化合物之原料粉末而言,例如可使用乾式混合之方法、在實質上不與原料之各成分進行反應的鈍性溶劑中進行濕式混合後再將溶劑除去的方法等來獲得。 將混合裝置而言,例如可使用V型混合機、搖擺式混合機(rocking mixer)、球磨機、振動研磨機等。In the calcination step, for the raw material powder containing the europium compound, for example, a method of dry mixing, a method of wet mixing in a passive solvent that does not substantially react with the components of the raw material and then removing the solvent can be used. To get. As for the mixing device, for example, a V-type mixer, a rocking mixer, a ball mill, a vibration mill, etc. can be used.

煅燒步驟中之煅燒溫度,並不特別限定,為1800℃以上且2100℃以下的範圍較為理想。 若煅燒溫度為上述下限值以上,β型矽鋁氮氧化物螢光體之晶粒成長會更有效果地進行。因此,能使光吸收率、內部量子效率及外部量子效率更良好。 若煅燒溫度為上述上限值以下,可更抑制β型矽鋁氮氧化物螢光體的分解。因此,能使光吸收率、內部量子效率及外部量子效率更良好。 各煅燒步驟中之昇溫時間、昇溫速度、加熱保持時間及壓力等其他條件亦無特別限定,根據使用的原料適當地調整即可。典型來說,加熱保持時間為3~30小時較為理想,壓力為0.6~10MPa較為理想。The calcination temperature in the calcination step is not particularly limited, but it is preferably in the range of 1800°C or more and 2100°C or less. If the firing temperature is above the above lower limit, the crystal grain growth of the β-type silicon aluminum oxynitride phosphor will proceed more effectively. Therefore, the light absorption rate, internal quantum efficiency, and external quantum efficiency can be made better. If the firing temperature is below the above upper limit, the decomposition of the β-type silicon aluminum oxynitride phosphor can be more suppressed. Therefore, the light absorption rate, internal quantum efficiency, and external quantum efficiency can be made better. Other conditions such as the heating time, heating rate, heating holding time, and pressure in each calcination step are also not particularly limited, and may be appropriately adjusted according to the raw materials used. Typically, the heating holding time is preferably 3 to 30 hours, and the pressure is preferably 0.6 to 10 MPa.

煅燒步驟中,就混合物之煅燒方法而言,例如可使用將混合物填充於由在煅燒中不會與混合物發生反應之材質(例如,氮化硼)構成之容器中,並在氮氣環境中進行加熱的方法。藉由使用此種方法,可使結晶成長反應、固溶反應等進行,獲得β型矽鋁氮氧化物螢光體。In the calcining step, as far as the calcining method of the mixture is concerned, for example, the mixture can be filled in a container made of a material that does not react with the mixture during calcining (for example, boron nitride), and heated in a nitrogen atmosphere Methods. By using this method, a crystal growth reaction, a solid solution reaction, etc. can proceed, and a β-type silicon aluminum oxynitride phosphor can be obtained.

經由煅燒步驟而獲得之煅燒物,通常係粒狀或塊狀的燒結體。藉由單獨使用或組合使用解碎、粉碎、分級等處理,可暫使煅燒物粉末化。 就具體的處理方法而言,可列舉如使用球磨機、振動研磨機、噴射研磨機等一般的粉碎機來將燒結體粉碎成預定的粒度的方法。但,因為過度的粉碎會有生成容易使光散射的微粒的可能、在粒子表面帶來結晶缺陷而引起發光效率降低的可能,所以須作留意。The calcined product obtained through the calcining step is usually a granular or massive sintered body. It is possible to temporarily pulverize the calcined product by using singly or in combination with treatments such as disintegration, pulverization, and classification. The specific processing method includes, for example, a method of pulverizing the sintered body to a predetermined particle size using a general pulverizer such as a ball mill, a vibration mill, and a jet mill. However, since excessive pulverization may generate particles that easily scatter light, and cause crystal defects on the surface of the particles, which may cause a decrease in luminous efficiency, care must be taken.

・低溫煅燒步驟(退火步驟) 在煅燒步驟後,可更包含以比煅燒步驟中之煅燒溫度更低的溫度來將煅燒物(為暫已粉末化者較為理想)加熱而獲得低溫煅燒粉末的低溫煅燒步驟(退火步驟)。 低溫煅燒步驟(退火步驟),在稀有氣體、氮氣等鈍性氣體;氫氣、一氧化碳氣體、烴氣、氨氣等還原性氣體;或它們的混合氣體;或真空中等純氮以外的非氧化性氣體環境中進行較為理想。在氫氣環境中、氬氣環境中進行特別理想。 低溫煅燒步驟(退火步驟),在大氣壓環境下或加壓環境下進行皆可。低溫煅燒步驟(退火步驟)中之熱處理溫度,並不特別限定,為1200~1700℃較為理想,為1300℃~1600℃更為理想。低溫煅燒步驟(退火步驟)的時間,並不特別限定,為3~12小時較為理想,為5~10小時更為理想。 藉由進行低溫煅燒步驟(退火步驟),可使螢光體粒子之發光效率充分改善。又,藉由元素的重排,因為會除去應變、缺陷,所以亦可使透明性改善。這些結果,在調整It/Ii及Ip/Ii的方面較為理想。 在退火步驟會有異相產生的可能。但,其可藉由下述之酸處理等進行除去。・Low-temperature calcination step (annealing step) After the calcination step, it may further include a low temperature calcination step (annealing step) of heating the calcined product (preferably for temporarily pulverized ones) at a lower temperature than the calcination temperature in the calcination step to obtain a low temperature calcined powder. Low-temperature calcination step (annealing step), in passive gas such as rare gas, nitrogen; reducing gas such as hydrogen, carbon monoxide gas, hydrocarbon gas, ammonia gas; or their mixed gas; or non-oxidizing gas other than pure nitrogen in vacuum The environment is more ideal. It is particularly ideal to perform in a hydrogen environment and an argon environment. The low-temperature calcination step (annealing step) can be performed in an atmospheric pressure environment or a pressurized environment. The heat treatment temperature in the low-temperature calcination step (annealing step) is not particularly limited, but it is preferably 1200 to 1700°C, and more preferably 1300 to 1600°C. The time of the low-temperature calcination step (annealing step) is not particularly limited, but is preferably 3 to 12 hours, and more preferably 5 to 10 hours. By performing the low-temperature calcination step (annealing step), the luminous efficiency of the phosphor particles can be sufficiently improved. In addition, the rearrangement of the elements removes strains and defects, so transparency can also be improved. These results are ideal in terms of adjusting It/Ii and Ip/Ii. In the annealing step, there is a possibility of different phases. However, it can be removed by the following acid treatment or the like.

在退火步驟之前,亦可添加、混合構成β型矽鋁氮氧化物螢光體之元素的化合物。就添加之化合物而言,並不特別限定,可列舉如各元素之氧化物、氮化物、氮氧化物、氟化物、氯化物等。尤其,藉由將二氧化矽、氧化鋁、氧化銪、氟化銪等添加至各熱處理物中,有時會有使β型矽鋁氮氧化物螢光體之亮度更為改善的情況。但,就添加之原料而言,希望未固溶之殘餘部分能藉由退火步驟後之酸處理、鹼處理等來除去。Before the annealing step, a compound of elements constituting the β-type silicon aluminum oxynitride phosphor can also be added and mixed. The compound to be added is not particularly limited, and examples thereof include oxides, nitrides, oxynitrides, fluorides, and chlorides of each element. In particular, by adding silicon dioxide, aluminum oxide, europium oxide, europium fluoride, etc. to each heat treatment, the brightness of the β-type silicon aluminum oxynitride phosphor may be improved. However, in terms of the added raw materials, it is desirable that the remaining part that is not solid-solved can be removed by acid treatment, alkali treatment, etc. after the annealing step.

・酸處理步驟 在酸處理步驟中,將在低溫煅燒步驟(退火步驟)後獲得之低溫煅燒粉末以酸來進行處理。藉此,可將對發光沒有貢獻之雜質的至少一部分除去。 就酸而言,可使用包含選自於氫氟酸、硫酸、磷酸、鹽酸、及硝酸中之1種以上的酸的水溶液。尤其,為氫氟酸、硝酸、及氫氟酸與硝酸的混酸較為理想。 酸處理,可藉由將低溫煅燒粉末在包含上述酸的水溶液中予以分散來進行。攪拌的時間,例如為10分鐘以上且6小時以下,為30分鐘以上且3小時以下較為理想。攪拌時的溫度,例如為40℃以上且90℃以下,可較理想為50℃以上且70℃以下。 在酸處理步驟後,宜藉由過濾來分離β型矽鋁氮氧化物螢光體以外的物質,並對附著在β型矽鋁氮氧化物螢光體上的物質進行水洗。・Acid treatment steps In the acid treatment step, the low-temperature calcined powder obtained after the low-temperature calcining step (annealing step) is treated with an acid. Thereby, at least a part of impurities that do not contribute to light emission can be removed. As for the acid, an aqueous solution containing one or more acids selected from hydrofluoric acid, sulfuric acid, phosphoric acid, hydrochloric acid, and nitric acid can be used. In particular, hydrofluoric acid, nitric acid, and a mixed acid of hydrofluoric acid and nitric acid are preferable. The acid treatment can be performed by dispersing the low-temperature calcined powder in an aqueous solution containing the above-mentioned acid. The stirring time is, for example, 10 minutes or more and 6 hours or less, and preferably 30 minutes or more and 3 hours or less. The temperature during stirring is, for example, 40°C or higher and 90°C or lower, and preferably 50°C or higher and 70°C or lower. After the acid treatment step, it is preferable to separate substances other than the β-type silicon aluminum oxynitride phosphor by filtration, and wash the substances attached to the β-type silicon aluminum oxynitride phosphor with water.

・粉碎步驟 在粉碎步驟中,將酸處理步驟後之粉末予以粉碎而進行微粉化。尤其若以適切的條件進行該粉碎,可藉此製造It/Ii為0.41以下,且Ip/Ii為0.03以上的螢光體粒子。 就粉碎步驟而言,尤其以藉由使用二氧化鋯球體之球磨機來對酸處理步驟後之粉末進行較為理想。藉由轉速適中且時間適中的粉碎,可輕易獲得It/Ii為0.41以下,且Ip/Ii為0.03以上的螢光體粒子。 尤其,添加乙醇與水的混合溶液來實施球磨機所為的粉碎較為理想。藉由該混合溶液能將螢光體之表面狀態改質,並防止經微粉化後之粉末的凝聚。混合溶液之體積比以不相當於消防法之危險物的混合比例較為理想。作為一例,乙醇與水的體積比係1:1。・Crushing step In the pulverization step, the powder after the acid treatment step is pulverized and micronized. In particular, if the pulverization is performed under appropriate conditions, phosphor particles having an It/Ii of 0.41 or less and an Ip/Ii of 0.03 or more can be produced by this. With regard to the pulverization step, it is particularly desirable to perform the powder after the acid treatment step by a ball mill using zirconia balls. By pulverizing at a moderate speed and time, phosphor particles with an It/Ii of 0.41 or less and an Ip/Ii of 0.03 or more can be easily obtained. In particular, it is preferable to add a mixed solution of ethanol and water to perform pulverization by a ball mill. The mixed solution can modify the surface state of the phosphor and prevent the agglomeration of the micronized powder. It is ideal that the volume ratio of the mixed solution is not equivalent to the mixing ratio of dangerous substances in the fire protection law. As an example, the volume ratio of ethanol to water is 1:1.

・傾析步驟 在傾析步驟中,將經過粉碎步驟而微粉化之螢光體粒子投入適當的分散媒中,並使螢光體粒子沉澱。之後,除去上清液。藉此,可除去會對光學特性造成不良影響的微粒,且可輕易獲得It/Ii為0.41以下,且Ip/Ii為0.03以上的螢光體粒子。 就分散媒而言,例如可使用六偏磷酸鈉的水溶液等。 藉由將傾析步驟獲得之沉澱物進行過濾、乾燥,並視需要使其過篩,可獲得所期望的螢光體粒子。・Decantation step In the decantation step, the phosphor particles that have been micronized through the pulverization step are put into an appropriate dispersion medium, and the phosphor particles are precipitated. After that, the supernatant was removed. In this way, fine particles that may adversely affect optical properties can be removed, and phosphor particles having an It/Ii of 0.41 or less and Ip/Ii of 0.03 or more can be easily obtained. As the dispersion medium, for example, an aqueous solution of sodium hexametaphosphate or the like can be used. The desired phosphor particles can be obtained by filtering, drying the precipitate obtained in the decantation step, and sieving it as necessary.

<複合體、發光裝置及自發光型顯示器> 圖1,係發光裝置1之示意圖。 發光裝置1,具備複合體10、及發光元件20。複合體10,係接觸並設置於發光元件20的上部。 發光元件20,典型來說係藍色LED。發光元件20的下部存在有端子。端子可藉由與電源連接而發光。 從發光元件20發出的激發光,係藉由複合體10進行波長變換。當激發光為藍色光時,藍色光係藉由包含β型矽鋁氮氧化物的複合體10而變換波長成綠色光。<Composite, light-emitting device and self-luminous display> FIG. 1 is a schematic diagram of the light-emitting device 1. The light-emitting device 1 includes a composite body 10 and a light-emitting element 20. The composite body 10 is in contact with and arranged on the upper part of the light-emitting element 20. The light emitting element 20 is typically a blue LED. There are terminals in the lower part of the light-emitting element 20. The terminal can emit light by being connected to a power source. The wavelength of the excitation light emitted from the light-emitting element 20 is converted by the composite 10. When the excitation light is blue light, the blue light is converted into green light by the composite body 10 containing β-type silicon aluminum oxynitride.

複合體10,可藉由上述之螢光體粒子、以及將該螢光體粒子予以密封的密封材料來構成。 就密封材料而言,可使用各種硬化性樹脂。只要是充分透明,且能獲得在顯示器係必要的光學特性者,可使用任意的硬化性樹脂。 就密封材料而言,可列舉如聚矽氧樹脂。除了已列舉之東麗道康寧公司製之聚矽氧樹脂OE-6630、信越化學公司製之聚矽氧材料以外,可使用各種聚矽氧樹脂(例如作為LED照明用之聚矽氧樹脂而販售者)。聚矽氧樹脂,除了透明性以外,就耐熱性等觀點而言亦較為理想。 複合體10中之螢光體粒子的量,例如為10~70質量%,為25~55質量%較為理想。The composite body 10 can be composed of the above-mentioned phosphor particles and a sealing material that seals the phosphor particles. As for the sealing material, various curable resins can be used. Any curable resin can be used as long as it is sufficiently transparent and can obtain the optical properties necessary for the display system. As for the sealing material, for example, silicone resin can be cited. In addition to the listed polysiloxane resin OE-6630 manufactured by Toray Dow Corning Corporation and the polysiloxane material manufactured by Shin-Etsu Chemical Co., Ltd., various polysiloxane resins can be used (for example, as a polysiloxane resin for LED lighting and sold) By). In addition to transparency, silicone resin is also ideal from the viewpoint of heat resistance and the like. The amount of phosphor particles in the composite 10 is, for example, 10 to 70% by mass, and preferably 25 to 55% by mass.

發光元件20的大小、形狀,只要是滿足Micro LED或Mini LED的定義,且可適用於Micro LED顯示器或Mini LED顯示器者,並無特別限定。The size and shape of the light-emitting element 20 are not particularly limited as long as they meet the definition of Micro LED or Mini LED and can be applied to Micro LED displays or Mini LED displays.

藉由將發光裝置1作為畫素(就代表性而言為綠色畫素)使用,可構成自發光型顯示器(Micro LED顯示器或Mini LED顯示器)。藉由組合發出綠色光的發光裝置1(Micro LED或Mini LED)、發出藍色光的Micro LED或Mini LED、以及發出紅色光的Micro LED或Mini LED,可構成能表現色彩的自發光型顯示器(Micro LED顯示器或Mini LED顯示器)。 順帶一提,就發出藍色光的Micro LED或Mini LED而言,例如可為在圖1之發光裝置1中將複合體10除去所成者(亦即,只有藍色LED)。又,就發出紅色光的Micro LED或Mini LED而言,例如可為在圖1之發光裝置1中,複合體10係不包含β型矽鋁氮氧化物而是包含SCASN系螢光體者。By using the light-emitting device 1 as a pixel (typically, a green pixel), a self-luminous display (Micro LED display or Mini LED display) can be constructed. By combining the light emitting device 1 (Micro LED or Mini LED) that emits green light, the Micro LED or Mini LED that emits blue light, and the Micro LED or Mini LED that emits red light, a self-luminous display that can express colors ( Micro LED display or Mini LED display). Incidentally, for the Micro LED or Mini LED that emits blue light, for example, the composite 10 can be removed from the light-emitting device 1 in FIG. 1 (that is, only the blue LED). In addition, for Micro LEDs or Mini LEDs that emit red light, for example, in the light-emitting device 1 of FIG.

以上,針對本發明之實施形態進行描述,但它們係本發明之例示,可採用上述以外的各種構成。又,本發明並不受上述實施形態所限定,本發明包含能達成本發明之目的之範圍內的變形、改良等。 [實施例]Above, the embodiments of the present invention have been described, but they are examples of the present invention, and various configurations other than those described above can be adopted. In addition, the present invention is not limited to the above-mentioned embodiments, and the present invention includes modifications, improvements, etc. within the scope of achieving the object of the invention. [Example]

基於實施例及比較例對本發明之實施態樣進行詳細說明。以防萬一而先敘明,本發明並不僅限定於實施例。The implementation aspects of the present invention will be described in detail based on examples and comparative examples. Just in case, it is stated first that the present invention is not limited to the embodiments.

(實施例1) 實施例1之螢光體粒子,係經由以下各步驟所製造而成。 ・將混合起始原料後獲得之原料粉末予以煅燒的煅燒步驟, ・在將煅燒步驟獲得之煅燒物暫時粉末化後實施的低溫煅燒步驟(退火步驟), ・從在低溫煅燒步驟後獲得之低溫煅燒粉末將雜質除去的酸處理步驟, ・將酸處理步驟後之粉末予以粉碎而進行微粉化的粉碎步驟,及 ・將在粉碎步驟產生的微粉末除去的傾析步驟。 以下,針對這些步驟進行詳細說明。(Example 1) The phosphor particles of Example 1 were manufactured through the following steps. ・The calcination step of calcining the raw material powder obtained after mixing the starting materials, ・The low-temperature calcination step (annealing step) performed after temporarily pulverizing the calcined product obtained in the calcination step, ・An acid treatment step in which impurities are removed from the low-temperature calcined powder obtained after the low-temperature calcining step, ・Crush the powder after the acid treatment step to perform the pulverization step of micronization, and ・A decantation step to remove the fine powder generated in the pulverization step. Hereinafter, these steps will be described in detail.

・煅燒步驟 就實施例1之螢光體的起始原料而言,係以使各元素按莫耳比計為Si:Al:O:Eu=5.83:0.18:0.18:0.03的方式來摻合並混合氮化矽粉末(宇部興產公司製、SN-E10級)、氮化鋁粉末(德山公司製、E級)、氧化鋁粉末(大明化學公司製、TM-DAR級)、氧化銪(信越化學公司製、RU級)。另外,氮含量係在配合上述莫耳比而摻合原料時決定。 為了將這些各種起始原料充分分散並混合,以小型粉碎混合機進行混合。之後,使其全部通過孔目150μm的篩並除去凝聚物,並以此作為原料粉末。 將原料粉末填充至附蓋的圓筒型氮化硼製容器(電氣化學工業公司製)中,在碳加熱器之電爐內於0.9MPa之加壓氮氣環境中以1900℃煅燒5小時。藉由以上步驟獲得煅燒物。・Calcination step Regarding the starting material of the phosphor of Example 1, the silicon nitride was blended and mixed in such a way that the elements were Si: Al: O: Eu = 5.83: 0.18: 0.18: 0.03 in molar ratio. Powder (manufactured by Ube Industries Co., Ltd., SN-E10 grade), aluminum nitride powder (manufactured by Tokuyama Corporation, grade E), alumina powder (manufactured by Daimyung Chemical Co., TM-DAR grade), europium oxide (manufactured by Shin-Etsu Chemical Co., Ltd.) , RU level). In addition, the nitrogen content is determined when the above-mentioned molar ratio is blended to blend the raw materials. In order to fully disperse and mix these various starting materials, they are mixed with a small pulverizing mixer. After that, all the particles were passed through a sieve with a mesh size of 150 μm to remove agglomerates, and this was used as a raw material powder. The raw material powder was filled in a cylindrical boron nitride container with a lid (manufactured by Denki Kagaku Kogyo Co., Ltd.), and calcined at 1900°C for 5 hours in an electric furnace with a carbon heater in a 0.9 MPa pressurized nitrogen atmosphere. The calcined product is obtained through the above steps.

・低溫煅燒步驟(退火步驟) 將在上述煅燒步驟獲得之煅燒物填充至圓筒型氮化硼製容器中。將其在備有碳加熱器之電爐中於大氣壓之氬氣流環境下以1500℃保持7小時。藉由以上步驟獲得低溫煅燒粉末。・Low-temperature calcination step (annealing step) The calcined product obtained in the above calcining step is filled into a cylindrical container made of boron nitride. It was kept at 1500°C for 7 hours in an electric furnace equipped with a carbon heater under an atmosphere of argon gas at atmospheric pressure. The low-temperature calcined powder is obtained through the above steps.

・酸處理步驟 將上述低溫煅燒粉末浸於氫氟酸與硝酸的混酸中。然後以60℃以上的條件加熱處理3小時。將加熱處理後之低溫煅燒粉末以純水充分洗淨後予以乾燥,再通過45μm篩,獲得酸處理步驟後之粉末(酸處理粉末)。 另外,在煅燒步驟中,因為會有如起因於原料粉末之副反應而生成之SiO之類的含氧的化合物會揮發,藉此而使煅燒步驟中獲得之煅燒物中含有的氧含量比原料粉末中含有的氧含量更為降低的傾向,所以有時會在煅燒後生成包含了未固溶於β型矽鋁氮氧化物螢光體中之氧、鋁、銪的β型矽鋁氮氧化物螢光體以外的化合物(異相)。異相的幾乎全部或一部分係藉由酸處理步驟而溶解並除去。・Acid treatment steps The above-mentioned low-temperature calcined powder is immersed in a mixed acid of hydrofluoric acid and nitric acid. Then, it heat-processed at 60 degreeC or more for 3 hours. The heat-treated low-temperature calcined powder is thoroughly washed with pure water, dried, and then passed through a 45 μm sieve to obtain the powder after the acid treatment step (acid-treated powder). In addition, in the calcination step, because oxygen-containing compounds such as SiO generated by the side reaction of the raw material powder are volatilized, the oxygen content in the calcined material obtained in the calcination step is higher than that of the raw material powder. The oxygen content in it tends to decrease, so it sometimes generates β-type silicon-aluminum oxynitride containing oxygen, aluminum, and europium that are not solid-dissolved in the β-type silicon-aluminum oxynitride phosphor after calcination. Compounds other than phosphors (heterophase). Almost all or part of the heterogeneous phase is dissolved and removed by the acid treatment step.

・粉碎步驟 將上述酸處理粉末加入體積比為1:1之水與乙醇的混合溶液中而製成分散液。使用球磨機(二氧化鋯球體)將此分散液以轉速40rpm粉碎14小時。之後,經過過濾、乾燥,並通過標稱孔目45μm的篩,獲得粉碎步驟後之粉末。・Crushing step The above-mentioned acid-treated powder is added to a mixed solution of water and ethanol with a volume ratio of 1:1 to prepare a dispersion. A ball mill (zirconia spheres) was used to pulverize this dispersion at a rotation speed of 40 rpm for 14 hours. After that, it is filtered, dried, and passed through a sieve with a nominal mesh of 45 μm to obtain the powder after the pulverization step.

・傾析步驟 為了從酸處理步驟後之粉末將超微粉除去,實施將酸處理步驟後之粉末逐漸沉降之上清液之微粉予以除去的傾析步驟,並將獲得之沉澱物過濾、乾燥,再通過孔目45μm的篩。最終獲得實施例1的β型矽鋁氮氧化物螢光體。 另外,傾析的操作,係藉由根據斯托克斯公式,以將直徑2μm以下之粒子除去的設定來計算螢光體粒子的沉降時間,並從沉降開始在到達預定時間的同時,將預定高度以上之上清液除去的方法來實施。就分散媒而言係使用包含六偏磷酸鈉0.05質量%之離子交換水的水溶液,並使用可從管將上方的液體吸起而除去上清液的裝置,該管係在圓筒狀容器之預定高度設置有吸入口。傾析的操作係重複實施。・Decantation step In order to remove the superfine powder from the powder after the acid treatment step, a decantation step is implemented in which the powder after the acid treatment step gradually settles to remove the fine powder of the supernatant liquid, and the obtained precipitate is filtered, dried, and then passed through the mesh 45μm sieve. Finally, the β-type silicon aluminum oxynitride phosphor of Example 1 was obtained. In addition, the decantation operation is based on the Stokes formula to calculate the settling time of phosphor particles with the setting of removing particles with a diameter of 2μm or less. The method of removing the supernatant liquid above the height is implemented. As for the dispersion medium, an aqueous solution containing 0.05% by mass of sodium hexametaphosphate ion-exchanged water is used, and a device that can suck up the upper liquid from a tube to remove the supernatant is used, and the tube is connected to a cylindrical container. A suction port is provided at a predetermined height. The operation of decantation is repeated.

(實施例2及3、以及比較例1及2) 實施例2及3、以及比較例1及2之螢光體,如表1中所示,係將實施例1中之粉碎步驟(球磨粉碎)的粉碎時間予以變化所成者。具體而言,實施例2及3、以及比較例1中,係將粉碎步驟的粉碎時間如表1所示分別設定為10小時、9小時、及5小時。比較例2則不實施球磨粉碎。 粉碎步驟以外的其他步驟係與實施例1同樣地進行,獲得實施例2及3、以及比較例1及2的螢光體粒子。(Examples 2 and 3, and Comparative Examples 1 and 2) The phosphors of Examples 2 and 3 and Comparative Examples 1 and 2, as shown in Table 1, were obtained by changing the pulverization time of the pulverization step (ball mill pulverization) in Example 1. Specifically, in Examples 2 and 3 and Comparative Example 1, the pulverization time of the pulverization step was set to 10 hours, 9 hours, and 5 hours, respectively, as shown in Table 1. In Comparative Example 2, ball milling was not implemented. The steps other than the pulverization step were performed in the same manner as in Example 1, and phosphor particles of Examples 2 and 3 and Comparative Examples 1 and 2 were obtained.

(實施例4) 將煅燒步驟之煅燒溫度設定為2000℃、將煅燒時間設定為18小時、並將粉碎步驟的粉碎時間設定為20小時,除此以外,以與實施例1同樣的方式進行而獲得螢光體粒子。(Example 4) Except that the calcination temperature of the calcination step was set to 2000°C, the calcination time was set to 18 hours, and the pulverization time of the pulverization step was set to 20 hours, the same procedure as in Example 1 was carried out to obtain phosphor particles. .

(比較例3) 如表1中所示,不實施酸處理步驟及傾析步驟,除此以外,以與實施例3同樣的方式進行而獲得螢光體粒子。(Comparative example 3) As shown in Table 1, except that the acid treatment step and the decantation step were not carried out, it was carried out in the same manner as in Example 3 to obtain phosphor particles.

<結晶結構之確認> 針對實施例及比較例之各螢光體粒子,使用X射線繞射裝置(理學(股)公司製之UltimaIV),根據使用了Cu-Kα射線的粉末X射線繞射圖案來確認結晶結構。 在實施例及比較例之各螢光體粒子的粉末X射線繞射圖案中,辨識出與β型矽鋁氮氧化物結晶相同的繞射圖案。亦即,確認在實施例及比較例中獲得了β型矽鋁氮氧化物螢光體。<Confirmation of crystal structure> For the phosphor particles of the Examples and Comparative Examples, an X-ray diffraction device (UltimaIV manufactured by Rigaku Corporation) was used to confirm the crystal structure based on a powder X-ray diffraction pattern using Cu-Kα rays. In the powder X-ray diffraction patterns of the phosphor particles in the Examples and Comparative Examples, the same diffraction pattern as the β-type silicon aluminum oxynitride crystal was recognized. That is, it was confirmed that β-type silicon aluminum oxynitride phosphors were obtained in Examples and Comparative Examples.

<D50 及D90 之測定> 實施例及比較例之各螢光體粒子的D50 及D90 ,乃藉由係雷射繞射-散射法之粒徑測定裝置的Microtrac MT3300EXII(MicrotracBEL(股)公司)來測定。具體的測定程序係如下列方式。D Each phosphor particle of Examples and Comparative Examples <D 50 and D 90 Determination of> 50 and D 90 embodiment, is the line by a laser diffraction - Microtrac MT3300EXII measuring device of particle scattering method (MicrotracBEL (Unit ) Company) to determine. The specific measurement procedure is as follows.

(1)在混合有六偏磷酸鈉0.05質量%之離子交換水的水溶液100mL中投入螢光體0.5g,並使用超音波均化器(Ultrasonic Homogenizer US-150E、日本精機製作所(股)公司、Amplitude100%、振盪頻率19.5±1kHz、尖端尺寸20mmφ、振幅約31μm)將尖端配置於液體的中央部進行3分鐘之分散處理。藉此獲得測定用分散液。 (2)之後,使用上述粒徑測定裝置,測得測定用分散液中之螢光體粒子的粒徑分布。從獲得之粒徑分布中求得D50 及D90(1) Put 0.5 g of the phosphor into 100 mL of an aqueous solution of ion-exchange water containing 0.05% by mass of sodium hexametaphosphate, and use an ultrasonic homogenizer (Ultrasonic Homogenizer US-150E, Nippon Seiki Manufacturing Co., Ltd., Amplitude100%, oscillation frequency 19.5±1kHz, tip size 20mmφ, amplitude about 31μm) The tip is placed in the center of the liquid and the dispersion treatment is performed for 3 minutes. In this way, a dispersion liquid for measurement is obtained. (2) After that, using the above-mentioned particle size measuring device, the particle size distribution of the phosphor particles in the dispersion liquid for measurement is measured. D 50 and D 90 are obtained from the obtained particle size distribution.

<455nm光吸收率、內部量子效率、外部量子效率、峰值波長> 實施例及比較例之各螢光體粒子的455nm光吸收率、內部量子效率、及外部量子效率係經以下程序所算出。<455nm light absorption rate, internal quantum efficiency, external quantum efficiency, peak wavelength> The 455nm light absorption rate, internal quantum efficiency, and external quantum efficiency of each phosphor particle of the Examples and Comparative Examples were calculated by the following procedures.

分別將實施例及比較例之螢光體粒子以使表面平滑的方式填充至凹型槽中,並安裝於積分球的開口部。使用光纖將來自於發光光源(Xe燈)並分光成455nm之波長的單色光作為螢光體的激發光導入此積分球內。以此單色光照射螢光體試樣,並使用分光光度計(大塚電子(股)公司製之MCPD-7000)測定試樣的螢光光譜。從獲得之光譜數據,算出激發反射光光子數(Qref)及螢光光子數(Qem)。激發反射光光子數係與激發光光子數在同樣的波長範圍內算出,螢光光子數係在465~800nm的範圍內算出。The phosphor particles of the embodiment and the comparative example were respectively filled into the concave groove in such a way that the surface was smooth, and installed in the opening of the integrating sphere. Using an optical fiber, a monochromatic light from a luminous light source (Xe lamp) and split into a wavelength of 455nm is used as the excitation light of the phosphor to be guided into the integrating sphere. The phosphor sample was irradiated with this monochromatic light, and the fluorescence spectrum of the sample was measured using a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). From the obtained spectral data, calculate the number of excited reflected light photons (Qref) and the number of fluorescent photons (Qem). The number of excitation reflected light photons and the number of excitation light photons are calculated within the same wavelength range, and the number of fluorescent photons is calculated within the range of 465 to 800 nm.

又,使用相同裝置,在積分球之開口部安裝反射率99%的標準反射板(Labsphere公司製之Spectralon(註冊商標)),測定波長455nm之激發光的光譜。此時,算出來自於450~465nm之波長範圍的光譜的激發光光子數(Qex)。 實施例及比較例之螢光體粒子的455nm光吸收率及內部量子效率,係藉由如下所示之算式來求得。 455nm光吸收率=[(Qex-Qref)/Qex]×100 內部量子效率=[Qem/(Qex-Qref)]×100 順帶一提,外部量子效率,係藉由如下所示之算式來求得。 外部量子效率=(Qem/Qex)×100 因此,根據上式則外部量子效率係成為如下所示的關係。 外部量子效率=455nm光吸收率×內部量子效率In addition, using the same device, a standard reflector (Spectralon (registered trademark) manufactured by Labsphere Corporation) with a reflectivity of 99% was installed in the opening of the integrating sphere, and the spectrum of excitation light with a wavelength of 455 nm was measured. At this time, the number of photons (Qex) of the excitation light from the spectrum in the wavelength range of 450 to 465 nm was calculated. The 455nm light absorption rate and internal quantum efficiency of the phosphor particles of the Examples and Comparative Examples were obtained by the following formulas. 455nm light absorption rate=[(Qex-Qref)/Qex]×100 Internal quantum efficiency = [Qem/(Qex-Qref)]×100 By the way, the external quantum efficiency is obtained by the formula shown below. External quantum efficiency = (Qem/Qex)×100 Therefore, according to the above formula, the external quantum efficiency system has the following relationship. External quantum efficiency = 455nm light absorption rate × internal quantum efficiency

實施例及比較例之螢光體粒子的峰值波長,係定義為將螢光體安裝在積分球的開口部而獲得之光譜數據中在波長465nm至800nm的範圍內顯示最高強度的波長。The peak wavelength of the phosphor particles of the Examples and Comparative Examples is defined as the wavelength that shows the highest intensity in the wavelength range of 465nm to 800nm in the spectral data obtained by mounting the phosphor on the opening of the integrating sphere.

<螢光體粒子之800nm漫反射率> 實施例及比較例之螢光體粒子的漫反射率,係將積分球裝置(ISV-469)安裝於日本分光公司製之紫外可視分光光度計(V-550)中而測定。在測定時,以標準反射板(Spectralon(註冊商標))進行基線校正,安裝填充有螢光體粒子的固體試樣支座,在500~850nm的波長範圍內測定漫反射率。 本說明書中之800nm漫反射率,係指在此測定中,尤其是在800nm中之漫反射率的數值。<800nm diffuse reflectance of phosphor particles> The diffuse reflectance of the phosphor particles of the Examples and Comparative Examples was measured by installing an integrating sphere device (ISV-469) in an ultraviolet visible spectrophotometer (V-550) manufactured by JASCO Corporation. In the measurement, a standard reflector (Spectralon (registered trademark)) is used for baseline calibration, a solid sample holder filled with phosphor particles is installed, and the diffuse reflectance is measured in the wavelength range of 500 to 850 nm. The 800nm diffuse reflectance in this specification refers to the value of the diffuse reflectance in this measurement, especially at 800nm.

<螢光體粒子之600nm光吸收率> 實施例及比較例之螢光體粒子的600nm光吸收率,係藉由以下程序進行測定。 在積分球的開口部,安裝反射率為99%的標準反射板(Labsphere公司製之Spectralon(註冊商標))。使用光纖將來自於發光光源(Xe燈)並分光成600nm之波長的單色光導入此積分球內,藉由分光光度計(大塚電子(股)公司製之MCPD-7000)測定反射光光譜。此時,從590~610nm之波長範圍的光譜算出入射光光子數(Qex(600))。<600nm light absorption rate of phosphor particles> The 600nm light absorption rate of the phosphor particles of the Examples and Comparative Examples was measured by the following procedure. In the opening of the integrating sphere, a standard reflector with a reflectivity of 99% (Spectralon (registered trademark) manufactured by Labsphere) is installed. Monochromatic light from a light source (Xe lamp) and split into a wavelength of 600 nm was introduced into the integrating sphere using an optical fiber, and the reflected light spectrum was measured by a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). At this time, the number of photons of incident light is calculated from the spectrum in the wavelength range of 590 to 610 nm (Qex (600)).

然後,以使表面平滑的方式將β型矽鋁氮氧化物螢光體填充至凹型槽中,並安裝於積分球的開口部。之後,以波長600nm的單色光照射,藉由分光光度計測定入射反射光光譜。從獲得之光譜數據算出入射反射光光子數(Qref(600))。入射反射光光子數(Qref(600))係與入射光光子數(Qex(600))在同樣的波長範圍內算出。基於下式從獲得之兩種類的光子數算出600nm光吸收率。 600nm光吸收率=((Qex(600)-Qref(600))/Qex(600))×100Then, the β-type silicon aluminum oxynitride phosphor is filled into the concave groove in such a way that the surface is smooth, and is installed in the opening of the integrating sphere. After that, it was irradiated with monochromatic light with a wavelength of 600 nm, and the incident reflected light spectrum was measured by a spectrophotometer. Calculate the number of incident reflected light photons (Qref(600)) from the obtained spectral data. The number of incident reflected light photons (Qref(600)) is calculated in the same wavelength range as the number of incident light photons (Qex(600)). The 600nm light absorption rate was calculated from the two types of photon numbers obtained based on the following formula. 600nm light absorption rate=((Qex(600)-Qref(600))/Qex(600))×100

藉由上述測定方法測定β型矽鋁氮氧化物螢光體的標準試樣(NIMS Standard Green lot No. NSG1301、矽鋁氮氧化物公司製)時,600nm光吸收率係7.6%。因為若測定裝置的製造商、製造批號等有所變動的話,則600nm光吸收率的數值有時會發生變動,所以測定裝置的製造商、製造批號等變更時,係將根據上述β型矽鋁氮氧化物螢光體之標準試樣所得的測定值作為基準值,校正各測定值。When the standard sample of β-type silicon aluminum oxynitride phosphor (NIMS Standard Green lot No. NSG1301, manufactured by silicon aluminum oxynitride) was measured by the above measurement method, the light absorption rate at 600 nm was 7.6%. If the manufacturer of the measuring device, the manufacturing lot number, etc. change, the value of the 600nm light absorption rate may change. Therefore, when the manufacturer of the measuring device, the manufacturing lot number, etc., change, it will be based on the above-mentioned β-type silicon aluminum The measured value obtained from the standard sample of the nitrogen oxide phosphor is used as the reference value, and each measured value is corrected.

各螢光體的片材化、及光學特性的評價,係由以下程序進行。The sheeting of each phosphor and the evaluation of optical properties were performed by the following procedures.

<片材製作程序> (1)使用自轉公轉混合機將40質量份的螢光體粒子、及60質量份之東麗道康寧公司製的聚矽氧樹脂OE-6630進行攪拌處理及脫泡處理,藉此獲得均勻的混合物。就自轉公轉混合機而言,係使用THINKY公司製之型式ARE-310。又,針對攪拌處理及脫泡處理具體而言,係以轉速2000rpm攪拌處理2分30秒後,以轉速2200rpm進行2分30秒的脫泡處理。 (2)將上述(1)獲得之混合物滴加於透明的氟樹脂薄膜(flonchemical(股)公司製、NR5100-003:100P),並在該滴加物上再重疊透明的氟樹脂薄膜。將其使用具有薄膜厚度之2倍再加上50μm之間隙的滾輪,成形為未硬化片材。 (3)將在上述(2)獲得之未硬化片材以150℃、60分鐘的條件加熱,之後將氟樹脂薄膜剝離,獲得膜厚50±5μm的硬化片材。<Sheet production procedure> (1) Using a rotation and revolution mixer, 40 parts by mass of phosphor particles and 60 parts by mass of Toray Dow Corning polysiloxane resin OE-6630 are subjected to stirring treatment and defoaming treatment to obtain a uniform mixture . As for the rotation and revolution mixer, the model ARE-310 manufactured by THINKY is used. In addition, the stirring treatment and the defoaming treatment are specifically after the stirring treatment at a rotation speed of 2000 rpm for 2 minutes and 30 seconds, and then the defoaming treatment at a rotation speed of 2200 rpm for 2 minutes and 30 seconds. (2) The mixture obtained in (1) above is dropped on a transparent fluororesin film (manufactured by Flonchemical Co., Ltd., NR5100-003: 100P), and the transparent fluororesin film is superimposed on the drops. It is formed into an uncured sheet using a roller with a thickness of 2 times the film thickness and a gap of 50μm. (3) The uncured sheet obtained in (2) above was heated at 150°C for 60 minutes, and then the fluororesin film was peeled off to obtain a cured sheet with a film thickness of 50±5 μm.

<光學特性> 使用圖2中概略表示的裝置,將由在450nm至460nm的範圍內具有峰值波長之藍色LED發出的藍色光,照射於硬化片材的其中一面側(設在此藍色光之峰值波長的強度為Ii[W/nm])。然後,測定從硬化片材的另一面側發出的光在450nm至460nm之範圍內之峰值波長的強度It[W/nm]、以及在500nm至560nm之範圍內之峰值波長的強度Ip[W/nm]。然後,算出It/Ii及Ip/Ii。<Optical characteristics> Using the device schematically shown in Figure 2, the blue light emitted by a blue LED with a peak wavelength in the range of 450nm to 460nm was irradiated on one side of the hardened sheet (set the intensity of the peak wavelength of the blue light as Ii[W/nm]). Then, measure the intensity It[W/nm] of the peak wavelength of the light emitted from the other side of the cured sheet in the range of 450nm to 460nm, and the intensity Ip[W/ nm]. Then, calculate It/Ii and Ip/Ii.

上述測定中,就藍色LED而言,係使用下列者。 型號等:SMT型 PLCC-6 0.2W SMD 5050 LED 峰值波長:450nm-460nm 色度x:0.145-0.165 色度y:0.023-0.037In the above measurement, the following were used for the blue LED. Models, etc.: SMT PLCC-6 0.2W SMD 5050 LED Peak wavelength: 450nm-460nm Chromaticity x: 0.145-0.165 Chromaticity y: 0.023-0.037

又,圖2中,藍色LED的頂面與硬化片材的底面之間的距離為2mm。In addition, in FIG. 2, the distance between the top surface of the blue LED and the bottom surface of the hardened sheet is 2 mm.

<硬化片材之y值(色度Y)的測定> 使用了實施例及比較例之螢光體粒子之硬化片材的y值(色度Y),係依循JIS Z 8724從發光頻譜之400nm至800nm之範圍的波長區域數據中,算出以JIS Z 8701規定之XYZ表色系中CIE色度座標的y值(色度Y)來求得。因為y值越大則顯示器的色域化越高(綠色的表現區域更廣)所以較為理想。<Measurement of the y value (chromaticity Y) of the hardened sheet> The y value (chromaticity Y) of the cured sheet using the phosphor particles of the embodiment and the comparative example is calculated according to JIS Z 8724 from the wavelength region data in the range of 400 nm to 800 nm of the emission spectrum according to JIS Z 8701 It can be obtained from the y value (chromaticity Y) of the CIE chromaticity coordinate in the specified XYZ color system. It is ideal because the larger the y value, the higher the color gamut of the display (the green area is wider).

將各實施例及比較例之製造條件(包含原料組成)與評價結果整理並如表1所示。The production conditions (including the composition of raw materials) and the evaluation results of the respective Examples and Comparative Examples are summarized and shown in Table 1.

[表1] β-SiAlON螢光體 實施例1 實施例2 實施例3 比較例1 比較例2 實施例4 比較例3 製造條件 原料組成 (莫耳比) Si 5.83 5.83 5.83 5.83 5.83 5.83 5.83 Al 0.18 0.18 0.18 0.18 0.18 0.18 0.18 O 0.18 0.18 0.18 0.18 0.18 0.18 0.18 Eu 0.03 0.03 0.03 0.03 0.03 0.03 0.03 煅燒溫度(°C) 1900 1900 1900 1900 1900 2000 2000 煅燒時間(h) 5 5 5 5 5 18 18 退火溫度(°C) 1500 1500 1500 1500 1500 1500 1500 退火時間(h) 7 7 7 7 7 7 7 酸處理、過濾、純水洗淨 實施 實施 實施 實施 實施 實施 未實施 球磨粉碎 時間(h) 14 10 9 5 未實施 20 20 轉數(rpm) 40 40 40 40 未實施 40 40 傾析 實施 實施 實施 實施 實施 實施 未實施 過濾、乾燥 實施 實施 實施 實施 實施 實施 實施 評價 It/Ii 0.22 0.392 0.40 0.43 0.56 0.18 0.23 Ip/Ii 0.086 0.080 0.077 0.070 0.040 0.083 0.029 D50 (μm) 3.4 4.9 5.1 9.2 12.0 2.1 1.7 D90 (μm) 6.4 9.1 9.7 15.5 17.5 4.5 3.9 800nm漫反射率(%) 94.9 96 95.7 99.7 97.5 92 84 600nm吸收率(%) 7.5 7.9 8.9 4.8 4.9 7.5 11.0 455nm光吸收率(%) 52.1 63.7 65 68.6 74.9 44 38 內部量子效率(%) 69.3 74.8 75.6 78.1 80 58 47 外部量子效率(%) 36.1 48 49 53.6 60 26 18 峰值波長(nm) 542.5 543.3 543 543.8 544.3 542.4 541.9 y值 0.296 0.232 0.198 0.164 0.137 0.309 0.187 [Table 1] β-SiAlON phosphor Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Example 4 Comparative example 3 Manufacturing conditions Raw material composition (mole ratio) Si 5.83 5.83 5.83 5.83 5.83 5.83 5.83 Al 0.18 0.18 0.18 0.18 0.18 0.18 0.18 O 0.18 0.18 0.18 0.18 0.18 0.18 0.18 Eu 0.03 0.03 0.03 0.03 0.03 0.03 0.03 Calcining temperature (°C) 1900 1900 1900 1900 1900 2000 2000 Calcining time (h) 5 5 5 5 5 18 18 Annealing temperature (°C) 1500 1500 1500 1500 1500 1500 1500 Annealing time (h) 7 7 7 7 7 7 7 Acid treatment, filtration, pure water washing Implement Implement Implement Implement Implement Implement Not implemented Ball milling Time(h) 14 10 9 5 Not implemented 20 20 Speed (rpm) 40 40 40 40 Not implemented 40 40 Decantation Implement Implement Implement Implement Implement Implement Not implemented Filter and dry Implement Implement Implement Implement Implement Implement Implement Evaluation It/Ii 0.22 0.392 0.40 0.43 0.56 0.18 0.23 Ip/Ii 0.086 0.080 0.077 0.070 0.040 0.083 0.029 D 50 (μm) 3.4 4.9 5.1 9.2 12.0 2.1 1.7 D 90 (μm) 6.4 9.1 9.7 15.5 17.5 4.5 3.9 800nm diffuse reflectance (%) 94.9 96 95.7 99.7 97.5 92 84 600nm absorption rate (%) 7.5 7.9 8.9 4.8 4.9 7.5 11.0 455nm light absorption rate (%) 52.1 63.7 65 68.6 74.9 44 38 Internal quantum efficiency (%) 69.3 74.8 75.6 78.1 80 58 47 External quantum efficiency (%) 36.1 48 49 53.6 60 26 18 Peak wavelength (nm) 542.5 543.3 543 543.8 544.3 542.4 541.9 y value 0.296 0.232 0.198 0.164 0.137 0.309 0.187

如表1中所示,在It/Ii為0.41以下且Ip/Ii為0.03以上的實施例中,可獲得大的y值。亦即,表示實施例之螢光體粒子就Micro LED顯示器或Mini LED顯示器之高色域化的方面可較理想地使用。 另一方面,在It/Ii超過0.41且/或Ip/Ii未達0.03的比較例中,y值係比實施例更小。 以防萬一而先述明,實施例3之y值為0.198、比較例3之y值為0.187,此差距在乍看之下會認為是很小的差距,但在顯示器之高色域化的課題中,此差距係很大的差距。As shown in Table 1, in an embodiment where It/Ii is 0.41 or less and Ip/Ii is 0.03 or more, a large y value can be obtained. That is to say, the phosphor particles of the embodiment are ideally used in the aspect of high color gamut of Micro LED display or Mini LED display. On the other hand, in the comparative example where It/Ii exceeds 0.41 and/or Ip/Ii is less than 0.03, the value of y is smaller than that of the examples. Just in case, the y value of Example 3 is 0.198, and the y value of Comparative Example 3 is 0.187. This gap may be considered to be a small gap at first glance, but in the high color gamut of the display In the subject, this gap is a big gap.

順帶一提,由表1中記載之實施例及比較例可知,即便使用相同原料,根據酸處理的有無、球磨粉碎的條件(時間)及傾析的有無,It/Ii及Ip/Ii仍會有所變化。因此,可理解藉由選擇適切的原料,以及選擇適切的製造條件,可獲得It/Ii為0.41以下且Ip/Ii為0.03以上的螢光體粒子。By the way, it can be seen from the examples and comparative examples described in Table 1 that even if the same raw materials are used, it/Ii and Ip/Ii will still change depending on the presence or absence of acid treatment, the conditions (time) of ball milling and the presence or absence of decantation. Has changed. Therefore, it can be understood that by selecting appropriate raw materials and selecting appropriate manufacturing conditions, phosphor particles with an It/Ii of 0.41 or less and Ip/Ii of 0.03 or more can be obtained.

此申請案,係主張以2020年3月24日申請之日本特願2020-053228號為基礎的優先權,並將其揭示內容全部納入本發明中。This application claims priority based on Japanese Patent Application No. 2020-053228 filed on March 24, 2020, and incorporates all its disclosures into the present invention.

1:發光裝置 10:複合體 20:發光元件1: Light-emitting device 10: Complex 20: Light-emitting element

[圖1]係發光裝置之示意圖。 [圖2]係用於補充說明實施例中之評價方法的圖。[Figure 1] is a schematic diagram of the light-emitting device. [Fig. 2] is a diagram for supplementary explanation of the evaluation method in the examples.

1:發光裝置 1: Light-emitting device

10:複合體 10: Complex

20:發光元件 20: Light-emitting element

Claims (7)

一種螢光體粒子,係由β型矽鋁氮氧化物構成之Micro LED用或Mini LED用的螢光體粒子, 藉由以下片材製作程序製成的硬化片材,滿足下列光學特性; <片材製作程序> (1)使用自轉公轉混合機將40質量份之該螢光體粒子、及60質量份之東麗道康寧公司製的聚矽氧樹脂OE-6630進行攪拌處理及脫泡處理,藉此獲得均勻的混合物; (2)獲得將該(1)獲得之混合物滴加於透明的第一氟樹脂薄膜,並在該滴加物上再重疊透明的第二氟樹脂薄膜而成的片狀物,將此片狀物使用具有該第一氟樹脂薄膜與該第二氟樹脂薄膜之厚度合計再加上50μm之間隙的滾輪,成形為未硬化片材; (3)將該(2)獲得之未硬化片材以150℃、60分鐘的條件加熱,之後,將該第一氟樹脂薄膜及該第二氟樹脂薄膜剝離,獲得膜厚50±5μm的硬化片材; <光學特性> 令由在450nm至460nm的範圍內具有峰值波長的藍色LED發出之藍色光在峰值波長時的強度為Ii[W/nm],並令該藍色光照射於該硬化片材的其中一面側時從該硬化片材的另一面側發出的光在450nm至460nm的範圍內的峰值波長的強度為It[W/nm]且在500nm至560nm的範圍內的峰值波長的強度為Ip[W/nm]時, It/Ii為0.41以下,且Ip/Ii為0.03以上。A kind of phosphor particles, which are phosphor particles for Micro LED or Mini LED made of β-type silicon aluminum oxynitride, The hardened sheet made by the following sheet production process meets the following optical characteristics; <Sheet production procedure> (1) Using a rotating and revolving mixer, 40 parts by mass of the phosphor particles and 60 parts by mass of Toray Dow Corning polysiloxane resin OE-6630 are subjected to stirring and defoaming treatment to obtain a uniform mixture; (2) Obtain a sheet in which the mixture obtained in (1) is dropped on a transparent first fluororesin film, and then a transparent second fluororesin film is superimposed on the drops, and the sheet is The object is formed into an uncured sheet using a roller having the total thickness of the first fluororesin film and the second fluororesin film plus a gap of 50μm; (3) The uncured sheet obtained in (2) was heated at 150°C for 60 minutes, and then the first fluororesin film and the second fluororesin film were peeled off to obtain a cured film with a thickness of 50±5μm Sheet; <Optical characteristics> When the intensity of the blue light emitted by the blue LED with a peak wavelength in the range of 450nm to 460nm at the peak wavelength is Ii [W/nm], and the blue light is irradiated on one side of the hardened sheet The intensity of the peak wavelength of the light emitted from the other side of the cured sheet in the range of 450nm to 460nm is It[W/nm] and the intensity of the peak wavelength in the range of 500nm to 560nm is Ip[W/nm ]Time, It/Ii is 0.41 or less, and Ip/Ii is 0.03 or more. 如請求項1之螢光體粒子,其中, 該β型矽鋁氮氧化物的組成係以通式Si12-a Ala Ob N16-b :Eux (0<a≦3;0<b≦3;0<x≦0.1)表示,且令以雷射繞射散射法測定之體積基準累積50%的粒徑及體積基準累積90%的粒徑分別為D50 及D90 時,D50 為5μm以下,D90 為10μm以下; 惟,D50 及D90 ,係使用將該螢光體粒子0.5g投入混合有六偏磷酸鈉0.05質量%的離子交換水溶液100ml中,並對其使用振盪頻率19.5±1kHz、振幅31±5μm的超音波均化器,將尖端配置於液體的中央部進行3分鐘之分散處理後而獲得的液體測得的數值。Such as the phosphor particles of claim 1, wherein the composition of the β-type silicon aluminum oxynitride is based on the general formula Si 12-a Al a O b N 16-b : Eu x (0<a≦3; 0< b≦3; 0<x≦0.1), and let the cumulative 50% particle size measured by the laser diffraction scattering method on the volume basis and the cumulative 90% particle size on the volume basis be D 50 and D 90 respectively, D 50 is 5μm or less, D 90 is 10μm or less; However, D 50 and D 90 are used to put 0.5 g of the phosphor particles into 100 ml of an ion-exchange aqueous solution mixed with sodium hexametaphosphate 0.05% by mass, and use it An ultrasonic homogenizer with an oscillation frequency of 19.5 ± 1 kHz and an amplitude of 31 ± 5 μm. The tip is placed in the center of the liquid and subjected to a dispersion treatment for 3 minutes. The measured value of the liquid is obtained. 如請求項1或2之螢光體粒子,其中, 對波長800nm的光的漫反射率為85%以上。Such as the phosphor particles of claim 1 or 2, in which, The diffuse reflectance of light with a wavelength of 800 nm is 85% or more. 如請求項1或2之螢光體粒子,其中, 對波長600nm的光的光吸收率為10%以下。Such as the phosphor particles of claim 1 or 2, in which, The light absorption rate for light with a wavelength of 600 nm is 10% or less. 一種複合體,具備如請求項1至4中任一項之螢光體粒子,以及將該螢光體粒子予以密封的密封材料。A composite body is provided with the phosphor particles according to any one of claims 1 to 4, and a sealing material for sealing the phosphor particles. 一種發光裝置,具備發出激發光的發光元件,以及將該激發光的波長予以變換之如請求項5之複合體。A light-emitting device is provided with a light-emitting element that emits excitation light, and a composite body according to claim 5 that converts the wavelength of the excitation light. 一種自發光型顯示器,具備如請求項6之發光裝置。A self-luminous display is provided with the light-emitting device as claimed in claim 6.
TW110110123A 2020-03-24 2021-03-22 Phosphor particle, composite, light-emitting device and self-luminous display TW202140747A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020053228 2020-03-24
JP2020-053228 2020-03-24

Publications (1)

Publication Number Publication Date
TW202140747A true TW202140747A (en) 2021-11-01

Family

ID=77891908

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110110123A TW202140747A (en) 2020-03-24 2021-03-22 Phosphor particle, composite, light-emitting device and self-luminous display

Country Status (3)

Country Link
JP (1) JPWO2021193182A1 (en)
TW (1) TW202140747A (en)
WO (1) WO2021193182A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024071305A1 (en) * 2022-09-30 2024-04-04 三井金属鉱業株式会社 Phosphor powder, phosphor-containing composition, phosphor, light-emitting element, and light-emitting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017325B (en) * 2015-11-30 2020-06-23 隆达电子股份有限公司 Quantum dot composite material and manufacturing method and application thereof
JP2017157724A (en) * 2016-03-02 2017-09-07 デクセリアルズ株式会社 Display apparatus and manufacturing method of the same, light emitting apparatus, and manufacturing method of the same
CN112739796B (en) * 2018-09-12 2024-01-09 电化株式会社 Phosphor and light-emitting device
WO2020054350A1 (en) * 2018-09-12 2020-03-19 デンカ株式会社 Fluorescent material and light-emitting device

Also Published As

Publication number Publication date
JPWO2021193182A1 (en) 2021-09-30
WO2021193182A1 (en) 2021-09-30

Similar Documents

Publication Publication Date Title
TWI827667B (en) Phosphors and light-emitting devices
TWI821389B (en) Phosphors and light-emitting devices
TW202140747A (en) Phosphor particle, composite, light-emitting device and self-luminous display
TW202204579A (en) Phosphor particle, composite, light-emitting device and self-luminous display
WO2022118600A1 (en) Fluorescent body particles and light-emitting device
TWI829803B (en) β-SIALON PHOSPHOR AND LIGHT-EMITTING DEVICE
TW202225378A (en) Phosphor powder, light-emitting device, display device and lighting device
WO2022024720A1 (en) Phosphor particles, composite, wavelength conversion member, and projector
WO2022024722A1 (en) Phosphor particles, compound body, wavelength conversion member, and projector
TWI833035B (en) β-SIALON PHOSPHOR AND LIGHT-EMITTING DEVICE
TWI838569B (en) β-SIALON PHOSPHOR PARTICLE AND LIGHT-EMITTING DEVICE
WO2023176564A1 (en) Phosphor powder, method for producing phosphor powder, and light emitting device
TW202328396A (en) Phosphor powder and light emitting device
TW202328397A (en) Phosphor powder and light emitting device
TW202248399A (en) Phosphor powder, composite and light-emitting device
JP2023082287A (en) Method of producing phosphor powder
WO2022080097A1 (en) EUROPIUM-ACTIVATED β-TYPE SIALON PHOSPHOR
JP2022064478A (en) METHOD FOR PRODUCING β SIALON PHOSPHOR
TW202113034A (en) Α-type sialon phosphor, light emitting member and light emitting device
CN117062896A (en) Europium-activated beta-sialon phosphor and light-emitting device