TW202135178A - Packaging substrate and manufacturing method thereof - Google Patents
Packaging substrate and manufacturing method thereof Download PDFInfo
- Publication number
- TW202135178A TW202135178A TW109122507A TW109122507A TW202135178A TW 202135178 A TW202135178 A TW 202135178A TW 109122507 A TW109122507 A TW 109122507A TW 109122507 A TW109122507 A TW 109122507A TW 202135178 A TW202135178 A TW 202135178A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- oxidation
- circuit
- top layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 304
- 230000003064 anti-oxidating effect Effects 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000005553 drilling Methods 0.000 claims description 6
- 239000012792 core layer Substances 0.000 claims description 5
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 5
- 238000005476 soldering Methods 0.000 abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000003963 antioxidant agent Substances 0.000 description 8
- 230000003078 antioxidant effect Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009194 climbing Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
本申請案實施例大體上係關於半導體領域,更具體言之,係關於封裝基板及其製造方法。The embodiments of the present application generally relate to the semiconductor field, and more specifically, relate to a package substrate and a manufacturing method thereof.
平台柵格陣列(land grid array, LGA)封裝技術係半導體封裝技術領域「跨越性的技術革命」,原因主要在於其使用金屬接點式封裝取代以往的針狀接腳。然而,一般很難自平台柵格陣列封裝之產品外觀來判斷其焊錫點,尤其是底部之焊錫點之效能是否良好。此外,LGA封裝側面之焊腳在生產過程中僅係在封裝單元連接處切斷而露出焊腳切斷面。相應地,由於焊腳切斷面較小,焊接時很難黏附足夠的焊錫。而且,曝露之焊腳切斷面在一段時間後容易氧化,此就更會造成焊腳切斷面上錫之困難,進而影響封裝產品在應用時之操作性及穩定性。Land grid array (LGA) packaging technology is a "leapfrog technological revolution" in the field of semiconductor packaging technology, mainly because it uses metal contact packaging to replace the previous pin-shaped pins. However, it is generally difficult to judge the performance of the solder joints, especially the solder joints at the bottom, from the appearance of the platform grid array package. In addition, the solder pin on the side of the LGA package is only cut off at the junction of the package unit during the production process to expose the cut surface of the solder pin. Correspondingly, due to the small cut surface of the solder leg, it is difficult to adhere enough solder during soldering. Moreover, the cut surface of the exposed solder foot is prone to oxidation after a period of time, which will further cause the difficulty of tin on the cut surface of the solder foot, which will affect the operability and stability of the packaged product during application.
因此,現有的平台柵格陣列封裝類封裝基板需進一步改良。Therefore, the existing platform grid array package type package substrate needs to be further improved.
本申請案實施例之目的之一在於提供一種封裝基板及其製造方法,其可自外觀對封裝基板之焊錫效能做有效評估性。One of the objectives of the embodiments of the present application is to provide a package substrate and a manufacturing method thereof, which can effectively evaluate the soldering performance of the package substrate from its appearance.
本申請案之一實施例提供一種封裝基板,其包括:一線路頂層;一線路底層;一第一絕緣層,其位於該線路頂層與該線路底層之間;以及至少一個階梯狀斜側面,該階梯狀斜側面具有自該線路頂層延伸至該第一絕緣層的一第一階梯斜側面及自該第一絕緣層延伸至該線路底層的一第二階梯斜側面。An embodiment of the present application provides a package substrate, which includes: a top layer of a circuit; a bottom layer of a circuit; a first insulating layer located between the top layer of the circuit and the bottom layer of the circuit; and at least one stepped oblique side surface, the The stepped oblique side surface has a first stepped oblique side surface extending from the top layer of the circuit to the first insulating layer and a second stepped oblique side surface extending from the first insulating layer to the bottom layer of the circuit.
根據本申請案之另一實施例,該第一絕緣層具有一核心層。該線路頂層進一步包括一導電頂層,該導電頂層上方設有一抗氧化頂層。該封裝基板進一步包括:一側導電層,其自該導電頂層沿著該至少一個階梯狀斜側面延伸至該線路底層;以及一側抗氧化層,其位於該側導電層上方,且自該抗氧化頂層延伸。該封裝基板進一步包括覆蓋線路底層的一抗氧化底層,該抗氧化底層自該側抗氧化層延伸。According to another embodiment of the present application, the first insulating layer has a core layer. The circuit top layer further includes a conductive top layer, and an anti-oxidation top layer is arranged on the conductive top layer. The packaging substrate further includes: a side conductive layer extending from the conductive top layer along the at least one stepped oblique side to the bottom line of the circuit; and a side anti-oxidation layer located above the side conductive layer and extending from the The oxidation top layer extends. The packaging substrate further includes an anti-oxidation bottom layer covering the bottom layer of the circuit, and the anti-oxidation bottom layer extends from the side anti-oxidation layer.
根據本申請案之另一實施例,該線路底層進一步包括一導電底層,該導電底層下方設有一抗氧化底層。該導電頂層、該側導電層及該導電底層為銅層,該抗氧化頂層、該側抗氧化層及該抗氧化底層為鎳金層。該抗氧化頂層之側面亦呈傾斜階梯狀。According to another embodiment of the present application, the circuit bottom layer further includes a conductive bottom layer, and an anti-oxidation bottom layer is provided under the conductive bottom layer. The conductive top layer, the side conductive layer and the conductive bottom layer are copper layers, and the anti-oxidation top layer, the side anti-oxidation layer and the anti-oxidation bottom layer are nickel-gold layers. The side surface of the anti-oxidation top layer is also inclined and stepped.
本申請案之另一實施例亦提供一種封裝基板料條,其包括上述封裝基板。Another embodiment of the application also provides a package substrate strip, which includes the above-mentioned package substrate.
本申請案之另一實施例亦提供一種製造封裝基板之方法,其包括:提供具有若干封裝基板單元之一封裝基板料條,該等封裝基板單元之各者包含一線路頂層、一線路底層、及一第一絕緣層,該第一絕緣層具有一核心層,且位於該線路頂層與該線路底層之間;自該線路頂層之一上表面向下鑽孔至該第一絕緣層之部分而形成一第一凹槽,該第一凹槽具有自該線路頂層延伸至該第一絕緣層的一第一階梯斜側面;及自該第一凹槽之一底部鑽孔至該線路底層而形成一第二凹槽,該第二凹槽具有自該第一絕緣層延伸至該線路底層的一第二階梯斜側面;以及分割若干封裝基板單元形成單獨的封裝基板。Another embodiment of the present application also provides a method for manufacturing a package substrate, which includes: providing a package substrate strip having a plurality of package substrate units, each of the package substrate units includes a circuit top layer, a circuit bottom layer, And a first insulating layer. The first insulating layer has a core layer and is located between the top layer of the circuit and the bottom layer of the circuit; and a portion of the first insulating layer is drilled down from an upper surface of the top layer of the circuit A first groove is formed, and the first groove has a first stepped oblique side surface extending from the top layer of the circuit to the first insulating layer; and is formed by drilling a hole from a bottom of the first groove to the bottom layer of the circuit A second groove, the second groove having a second stepped oblique side surface extending from the first insulating layer to the bottom layer of the circuit; and a plurality of package substrate units are divided to form a single package substrate.
根據本申請案之另一實施例,該線路頂層具有一導電頂層,該方法包括形成位於該導電頂層上方的一抗氧化頂層,進一步包括形成一側導電層,該側導電層自該導電頂層沿著該第一階梯斜側面及該第二階梯斜側面延伸至該線路底層;以及形成一側抗氧化層,其位於該側導電層上方,且自該抗氧化頂層延伸。According to another embodiment of the present application, the top layer of the circuit has a conductive top layer. The method includes forming an anti-oxidation top layer above the conductive top layer, and further includes forming a side conductive layer along with the conductive top layer. Extending from the first step oblique side surface and the second step oblique side surface to the bottom layer of the circuit; and forming a side anti-oxidation layer, which is located above the side conductive layer and extends from the anti-oxidation top layer.
根據本申請案之另一實施例,該方法進一步包括形成覆蓋該線路底層的一抗氧化底層,該抗氧化底層自該側抗氧化層延伸。According to another embodiment of the present application, the method further includes forming an anti-oxidation underlayer covering the circuit underlayer, the anti-oxidation underlayer extending from the side anti-oxidation layer.
根據本申請案之另一實施例,該線路底層包括一導電底層,該方法進一步包括形成位於該導電底層下方的一抗氧化底層。According to another embodiment of the present application, the circuit bottom layer includes a conductive bottom layer, and the method further includes forming an anti-oxidation bottom layer under the conductive bottom layer.
與先前技術相比,本申請案實施例提供之封裝基板具有焊錫可視性,從而能夠有效判斷封裝基板之焊錫性是否良好,同時使得封裝基板之切斷面不容易被氧化。Compared with the prior art, the package substrate provided by the embodiment of the present application has solder visibility, so that it can effectively determine whether the solderability of the package substrate is good, and at the same time, the cut surface of the package substrate is not easily oxidized.
為更好地理解本申請案實施例之精神,以下結合本申請案之部分較佳實施例對其作進一步說明。In order to better understand the spirit of the embodiments of the present application, the following further describes them in conjunction with some preferred embodiments of the present application.
將會於下文中詳細地描述本申請案之實施例。在本申請案說明書全文中,將相同或相似的組件以及具有相同或相似的功能之組件藉由類似附圖標記來表示。在此所描述之有關附圖之實施例為說明性質的、圖解性質的且用於提供對本申請案之基本理解。本申請案之實施例不應該被解釋為對本申請案之限制。The embodiments of this application will be described in detail below. In the full text of the specification of this application, the same or similar components and components with the same or similar functions are denoted by similar reference numerals. The embodiments related to the drawings described herein are illustrative, diagrammatic and used to provide a basic understanding of the application. The embodiments of this application should not be construed as limitations on this application.
如本文中所使用,術語「大致」、「大體上」、「基本」及「約」用以描述及說明小的變化。當與事件或情形結合使用時,該術語可指事件或情形精確發生的例項以及事件或情形極近似地發生的例項。舉例而言,當結合數值使用時,術語可指小於或等於該數值之±10%之變化範圍,例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%。舉例而言,若兩個數值之間的差值小於或等於所述值之平均值之±10% (例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%),則可認為該兩個數值「大體上」相同。As used herein, the terms "approximately", "generally", "basic" and "about" are used to describe and illustrate small changes. When used in conjunction with an event or situation, the term can refer to an instance in which the event or situation occurs precisely and an instance in which the event or situation occurs in close proximity. For example, when used in conjunction with a value, the term can refer to a range of variation less than or equal to ±10% of the value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or Equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the difference between two values is less than or equal to ±10% of the average value of the value (for example, less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than Or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%), the two values can be considered "substantially" the same.
在本說明書中,除非經特別指定或限定之外,相對性的用詞例如:「中央的」、「縱向的」、「側向的」、「前方的」、「後方的」、「右方的」、「左方的」、「內部的」、「外部的」、「較低的」、「較高的」、「水平的」、「豎直的」、「高於」、「低於」、「上方的」、「下方的」、「頂部的」、「底部的」以及其衍生性的用詞(例如「水平地」、「向下地」、「向上地」等等)應該解釋成引用在討論中所描述或在附圖中所描繪之方向。此等相對性的用詞僅用於描述上的方便,且並不要求將本申請案以特定的方向建構或操作。In this manual, unless otherwise specified or limited, relative terms such as: "central", "vertical", "lateral", "front", "rear", "right" "," "left", "inner", "outer", "lower", "higher", "horizontal", "vertical", "above", "below "", "above", "below", "top", "bottom" and their derivative terms (such as "horizontal", "downward", "upward", etc.) should be interpreted as Reference is made to the directions described in the discussion or depicted in the drawings. These relative terms are only used for the convenience of description, and do not require the construction or operation of this application in a specific direction.
另外,有時在本文中以範圍格式呈現量、比率及其他數值。應理解,此類範圍格式係用於便利及簡潔起見,且應靈活地理解,不僅包含明確地指定為範圍限制之數值,而且包含涵蓋於該範圍內之所有個別數值或子範圍,如同明確地指定每一數值及子範圍一般。In addition, sometimes amounts, ratios, and other numerical values are presented in range format in this article. It should be understood that this type of range format is used for convenience and brevity, and should be understood flexibly. It includes not only the values explicitly designated as range limits, but also all individual values or sub-ranges covered within the range, as if clearly Specify each value and sub-range in general.
再者,為便於描述,「第一」、「第二」、「第三」等等可在本文中用於區分一個圖或一系列圖之不同組件。「第一」、「第二」、「第三」等等不意欲描述對應組件。Furthermore, for ease of description, "first", "second", "third", etc. may be used herein to distinguish different components of a graph or a series of graphs. "First", "Second", "Third", etc. are not intended to describe corresponding components.
圖1為根據本申請案之一些實施例之封裝基板100的橫截面視圖。封裝基板100包含線路頂層10、線路底層12及位於線路頂層10與線路底層12之間的絕緣層14,絕緣層14可為核心層。此外,封裝基板100亦包括至少一個階梯狀斜側面102,以方便對封裝基板100進行側面上錫,同時可根據焊錫點很好地判斷封裝基板100之焊錫狀況。在實際生產中,若干封裝基板100可在一封裝基板料條(未圖示)上集中加工、運輸,從而提高生產效率。FIG. 1 is a cross-sectional view of a
根據本申請案之一些實施例,階梯狀斜側面102可分為兩段,如圖1所示,第一段為自線路頂層10延伸至絕緣層14之第一階梯斜側面102a,第二段為自絕緣層14延伸至線路底層12之第二階梯斜側面102b。封裝基板100之兩段式斜坡設計側面使得封裝上錫效果更好,且第一階梯斜側面102a及第二階梯斜側面102b與線路底層12之表面之間的夾角愈小,封裝基板100之側面上錫效果愈好。According to some embodiments of the present application, the stepped
根據本申請案之一些實施例,如圖1所示,線路頂層10可包括導電頂層10a,其可用於封裝基板上之裝置之間的電路連接。例如,該導電頂層10a可位於線路頂層10之樹脂層210b上,如半固化樹脂PP (預浸體(prepreg))層上。該導電頂層10a之厚度為約10至20微米。封裝基板100亦可包含位於導電頂層10a上面之抗氧化頂層10b。該抗氧化頂層20b可用以保護導電頂層10a上之電子線路。According to some embodiments of the present application, as shown in FIG. 1, the
導電頂層10a與位於其上之抗氧化頂層10b可分別沿著階梯狀斜側面102向線路底層12延伸,從而形成側導電層112及位於側導電層112上方之側抗氧化層114。根據本申請案之一些實施例,側導電層112之厚度可為約10至20微米。The
根據本申請案之一些實施例,線路底層12可包括導電底層12a,其同樣可用於封裝基板100上之裝置之間的電路連接。類似地,該導電底層12a可位於樹脂層220b下方。根據本申請案之一些實施例,封裝基板100亦可包括覆蓋線路底層12之抗氧化底層115。該抗氧化底層115可自側抗氧化層114延伸。According to some embodiments of the present application, the
根據本申請案之一些實施例,封裝基板100亦可包括位於導電底層下方之另一抗氧化底層12b。According to some embodiments of the present application, the
根據本申請案之一些實施例,導電頂層10a、側導電層112及導電底層12a為金屬層,比如銅層,抗氧化頂層10b、側抗氧化層114、抗氧化底層12b及另一抗氧化底層115亦為金屬層,比如鎳金層。According to some embodiments of the present application, the
根據本申請案之一些實施例,抗氧化頂層10b之側面102c亦呈階梯狀。According to some embodiments of the present application, the
圖2A至圖2F為根據本申請案之一些實施例製造封裝基板100之方法。2A to 2F are methods of manufacturing the
參看圖2A,提供具有若干封裝基板單元之封裝基板(例如,LBGA封裝基板)料條,每一封裝基板單元200包含:線路頂層210、線路底層220及位於線路頂層210與線路底層220之間的絕緣層214。線路頂層210及線路底層220之厚度為約35至55微米,絕緣層214之厚度為約55至65微米,絕緣層可為BT樹脂基板材料。線路頂層210可包含導電頂層210a,線路底層220可包含導電底層220a。導電頂層210a及導電底層220a可由金屬材料製成,比如銅。導電頂層210a及導電底層220a之厚度及形狀在生產過程中會隨製程過程有所變化,例如其初始可為約12微米,可藉由蝕刻過程,將其厚度減小至為約3微米。類似地,熟習此項技術者應當理解,在半導體之製造過程中,其他層結構亦可能會受類似的影響,不能因此而否定結構之存在及相互間之關係。2A, a package substrate (for example, LBGA package substrate) strip is provided with a number of package substrate units. Each
參看圖2B,在導電頂層210a上之一處開口處向下移除開口處之線路頂層210與位於線路頂層210下方之部分絕緣層以曝露絕緣層214之部分表面,同時形成第一凹槽201。第一凹槽201之尺寸可藉由控制導電頂層210a之厚度與製程來控制,例如根據本申請案之一些實施例,第一凹槽201之上方開口寬度可為約550微米。第一凹槽201之數量及位置可根據需要確定,此處不詳述。在一些實施例中,在封裝基板100上亦可形成其他凹槽,例如用於形成通孔之凹槽等。Referring to FIG. 2B, at one of the openings on the conductive
根據本申請案之一些實施例,可藉由雷射鑽孔與機械鑽孔等製程形成第一凹槽201,使得第一凹槽201具有自線路頂層210延伸至絕緣層214之第一斜側面201a。階梯式(或多段式)側面設計可有更佳的焊錫效果。例如,在圖2B所示實施例中,第一斜側面201a可由兩段斜側面組成。類似地,第一斜側面201a之形狀及尺寸亦可藉由控制導電頂層210a之厚度與製程來控制。According to some embodiments of the present application, the
參考圖2C,自第一凹槽201之底部向下移除第一凹槽201底部之絕緣層以及絕緣層214下面之部分線路底層,以形成第二凹槽202。2C, from the bottom of the
根據本申請案之一些實施例,第二凹槽202可藉由雷射鑽孔等製程形成倒梯形結構,其中導電底層220a可作為蝕刻停止層使用。此舉可曝露線路底層220之部分導電底層,從而實現對第二凹槽202之深度之精確控制。第二凹槽202具有自絕緣層214延伸至第二凹槽202底部之第二斜側面201b。根據本申請案之一些實施例,第二凹槽202之底部寬度為約240至260微米。According to some embodiments of the present application, the
根據本申請案之一些實施例,第一凹槽201與第二凹槽202之深度總和可為約110至130微米,比如120微米。該深度總和可更進一步藉由結構設計與製程進行提昇,例如使用雷射方法使設計空間更大。另一方面,線路底層220中之底銅可有助於控制深度總和,從而實現深度一致性控制。可在已形成凹槽之封裝基板上根據需要在各別位置形成一或多個導電層。According to some embodiments of the present application, the total depth of the
例如,可參考圖2D,可形成第一導電層212,其可沿著第一凹槽201之第一側面201a與第二凹槽202之第二斜側面201b延伸至第二凹槽202之底部,使得第一導電層212具有階梯狀斜側面,從而形成基板單元200之側導電層112。該第一導電層212可為約1微米厚之銅層,可藉由例如但不限於化學方法形成。該第一導電層212亦可分別形成於導電頂層210a之上表面與導電底層220a之下表面上,以進一步加厚導電頂層210a及導電底層220a,或覆蓋第二凹槽202之底部。該第一導電層212可為後續形成線路層作準備。For example, referring to FIG. 2D, a first
參考圖2E,可藉由用聚合物層層壓(lamination)基板200之上表面及下表面,經過曝光及顯影圖案化聚合物層,之後移除聚合物層獲得各別線路。在一些實施例中,亦可根據需要填充各別凹槽,如用於填充通孔之凹槽形成通孔。在一些實施例中,亦可根據需要調整第一凹槽201及/或第二凹槽202中之銅層厚度。例如,在一實例中,可在基板200之上下表面及第一凹槽201及第二凹槽202之斜側面上藉由例如但不限於電鍍方法形成第二導電層216。第二導電層216可覆蓋第一導電層212及其階梯狀斜側面,同時可根據需要填充各別凹槽。該第二導電層216可由厚度約22至28微米,例如可形成為約25微米之銅層。Referring to FIG. 2E, the upper and lower surfaces of the
後續亦可根據需要適當調整第一導電層212之階梯狀斜側面上之第二導電層216之各別位置之厚度,例如,再次藉由聚合物層層壓、曝光及顯影,圖案化聚合物層,以對曝露之第二導電層進行蝕刻,使第一凹槽201及第二凹槽202之斜側壁及底部上之第二導電層216之厚度減小至約10微米,之後移除聚合物層。可藉由第二導電層216進一步增加基板單元200之導電頂層210a及導電底層220a之厚度。Subsequently, the thickness of the second
經過上述例示性處理,例如形成第一導電層212及第二導電層216,及基於該第一導電層212及第二導電層216之操作,可得到所需的適當導電頂層、側導電層以及導電底層,比如附圖1中之導電頂層10a、側導電層112以及導電底層12a。After the above exemplary processing, such as forming the first
根據本申請案之一些實施例,可根據需要,在蝕刻第二導電層216之過程中,使位於線路頂層上方之導電頂層210a形成具有傾斜階梯狀之斜側面,例如圖2F中之導電頂層210a之側面201c。According to some embodiments of the present application, during the etching of the second
可在線路層上方形成抗氧化層以防止線路層氧化及提供良好的導電效能。An anti-oxidation layer can be formed on the circuit layer to prevent oxidation of the circuit layer and provide good conductivity.
例如,參考圖2G,在基板單元200之第二導電層216上根據位置需要形成抗氧化層218,以保護其下之導電層不被氧化,同時增強線路之電傳輸效能。例如,可在基板單元200之導電頂層210上方、側導電層112上方以及導電底層220a下方分別形成抗氧化頂層10b、側抗氧化層114以及抗氧化底層12b。在一些實施例中,抗氧化底層218可覆蓋第二凹槽202底部之導電層,例如,如附圖1中所示之另一抗氧化底層115。抗氧化層可為例如但不限於鎳金層。如圖2G所示,由於線路頂層上方之導電頂層210a形成了具有階梯狀之斜側面,例如圖2F中之導電頂層210a之側面201c (如圖2F所示),則位於其上之抗氧化層,亦可形成傾斜階梯狀斜側面102c。最後可藉由切割經過該加工方法得到之封裝基板料條以得到如圖3所示之由封裝基板100陣列組成之封裝基板料條110的俯視圖及各別鋸切(saw)區域(A與A')的橫截面視圖。For example, referring to FIG. 2G, an
參考圖3,封裝基板100之階梯狀斜側面結構使得切割(saw)區域(A與A')設計成半孔結構之階梯狀,當進行焊錫時可藉由側邊之爬錫情況觀察整體產品之焊錫狀況包括底部及側邊之焊錫情形,從而有效判斷封裝基板100之側邊爬錫情況是否良好,同時可增加焊錫面積,進而提昇產品之牢固穩定性。Referring to FIG. 3, the stepped oblique side structure of the
本發明提出之此種封裝基板結構設計,使得基板上封裝焊錫之品質能夠藉由觀察側邊之爬錫情況得到確認,同時提高成品基板在封裝過程中焊錫之接觸面積並提昇焊接之良率,且多段式爬坡設計有效提高了焊錫效果,藉由合適的製程選擇可有效控制基板斜側面之尺寸,同時實現均一化控制。The structure design of the package substrate proposed in the present invention enables the quality of the package solder on the substrate to be confirmed by observing the solder climbing on the side, and at the same time increases the solder contact area of the finished substrate during the packaging process and improves the soldering yield. And the multi-stage climbing design effectively improves the soldering effect, and the size of the oblique side of the substrate can be effectively controlled by proper process selection, and uniform control can be achieved at the same time.
本申請案之技術內容及技術特點已揭示如上,然而熟習此項技術者仍可能基於本申請案之教示及揭示而作種種不背離本申請案精神之替換及修飾。因此,本申請案之保護範疇應不限於實施例所揭示之內容,而應包括各種不背離本申請案之替換及修飾,並為本專利申請案之申請專利範圍所涵蓋。The technical content and technical features of this application have been disclosed above, but those who are familiar with this technology may still make various substitutions and modifications without departing from the spirit of this application based on the teachings and disclosures of this application. Therefore, the scope of protection of this application should not be limited to the content disclosed in the embodiments, but should include various substitutions and modifications that do not deviate from this application, and should be covered by the patent application scope of this patent application.
10:線路頂層
10a:導電頂層
10b:抗氧化頂層
12:線路底層
12a:導電底層
12b:抗氧化底層
14:絕緣層
100:封裝基板
102:階梯狀斜側面
102a:第一階梯斜側面
102b:第二階梯斜側面
102c:傾斜階梯狀斜側面
110:封裝基板料條
112:側導電層
114:側抗氧化層
115:抗氧化底層
200:封裝基板單元/基板
201:第一凹槽
201a:第一斜側面
201b:第二斜側面
201c:側面
202:第二凹槽
210:線路頂層
210a:導電頂層
210b:樹脂層
212:第一導電層
214:絕緣層
216:第二導電層
218:抗氧化底層
220:線路底層
220a:導電底層
220b:樹脂層
A:鋸切區域
A':鋸切區域10: Top of the
在下文中將簡要地說明為了描述本申請案實施例或先前技術所必要的附圖以便於描述本申請案之實施例。顯而易見地,下文描述中之附圖僅僅係本申請案中之部分實施例。對熟習此項技術者而言,在不需要創造性勞動之前提下,依然可根據此等附圖中所例示之結構來獲得其他實施例之附圖。
圖1為根據本申請案之一些實施例之封裝基板100的橫截面視圖
圖2A至圖2G為根據本申請案之一些實施例製造封裝基板100之方法
圖3為根據本申請案之一些實施由封裝基板100陣列組成之封裝基板料條110的俯視圖與切割處的橫截面視圖In the following, the drawings necessary to describe the embodiments of the present application or the prior art will be briefly described in order to describe the embodiments of the present application. Obviously, the drawings in the following description are only part of the embodiments in this application. For those who are familiar with the technology, it is still possible to obtain drawings of other embodiments based on the structures illustrated in these drawings without requiring creative work.
FIG. 1 is a cross-sectional view of a
10:線路頂層10: Top of the line
10a:導電頂層10a: conductive top layer
10b:抗氧化頂層10b: Antioxidant top layer
12:線路底層12: Bottom of the line
12a:導電底層12a: Conductive bottom layer
12b:抗氧化底層12b: Antioxidant bottom layer
14:絕緣層14: Insulation layer
100:封裝基板100: Package substrate
102:階梯狀斜側面102: Stepped oblique side
102a:第一階梯斜側面102a: Oblique side of the first step
102b:第二階梯斜側面102b: Oblique side of the second step
102c:傾斜階梯狀斜側面102c: Inclined stepped oblique side
112:側導電層112: side conductive layer
114:側抗氧化層114: side anti-oxidation layer
115:抗氧化底層115: Antioxidant bottom layer
210b:樹脂層210b: resin layer
220b:樹脂層220b: resin layer
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010144124.2 | 2020-03-04 | ||
CN202010144124.2A CN111199948A (en) | 2020-03-04 | 2020-03-04 | Package substrate and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202135178A true TW202135178A (en) | 2021-09-16 |
TWI754982B TWI754982B (en) | 2022-02-11 |
Family
ID=70747602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109122507A TWI754982B (en) | 2020-03-04 | 2020-07-03 | Package substrate and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111199948A (en) |
TW (1) | TWI754982B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11640934B2 (en) * | 2018-03-30 | 2023-05-02 | Intel Corporation | Lithographically defined vertical interconnect access (VIA) in dielectric pockets in a package substrate |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007317954A (en) * | 2006-05-26 | 2007-12-06 | Nec Electronics Corp | Semiconductor device, and its manufacturing method |
US9161461B2 (en) * | 2012-06-14 | 2015-10-13 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic structure with stepped holes |
JP5846185B2 (en) * | 2013-11-21 | 2016-01-20 | 大日本印刷株式会社 | Through electrode substrate and semiconductor device using the through electrode substrate |
TWI641094B (en) * | 2014-09-17 | 2018-11-11 | 矽品精密工業股份有限公司 | Substrate structure and method of manufacture |
US20170239756A1 (en) * | 2016-02-19 | 2017-08-24 | Materion Corporation | Laser manufacturing of solder preforms |
CN109429441A (en) * | 2017-08-29 | 2019-03-05 | 鹏鼎控股(深圳)股份有限公司 | Rigid Flex and preparation method thereof |
US11004733B2 (en) * | 2018-06-29 | 2021-05-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protection structures for bonded wafers |
TWI739027B (en) * | 2018-08-30 | 2021-09-11 | 恆勁科技股份有限公司 | Core structure of flip chip package substrate and preparation method thereof |
CN211529939U (en) * | 2020-03-04 | 2020-09-18 | 日月光半导体(上海)有限公司 | Package substrate |
-
2020
- 2020-03-04 CN CN202010144124.2A patent/CN111199948A/en active Pending
- 2020-07-03 TW TW109122507A patent/TWI754982B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI754982B (en) | 2022-02-11 |
CN111199948A (en) | 2020-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8119516B2 (en) | Bump structure formed from using removable mandrel | |
TWI697966B (en) | Semiconductor package substrate and manufacturing method thereof, and semiconductor package and manufacturing method thereof | |
US20110042128A1 (en) | Coreless packaging substrate and method for fabricating the same | |
TWI557855B (en) | Package carrier and manufacturing method thereof | |
TWI595812B (en) | Circuit board structure and manufacturing method thereof | |
TWI408775B (en) | Method for forming connections to contact pads of an integrated circuit | |
TWI397358B (en) | Wire bonding substrate and fabrication thereof | |
JP2020155631A5 (en) | ||
TW202135178A (en) | Packaging substrate and manufacturing method thereof | |
TWI575686B (en) | Semiconductor structure | |
CN211529939U (en) | Package substrate | |
TWI543685B (en) | Substrate structure and manufacturing method thereof | |
TW201701433A (en) | Package substrate and manufacturing method thereof | |
US8357861B2 (en) | Circuit board, and chip package structure | |
KR20220025728A (en) | Chip redistribution structure and manufacturing method thereof | |
TWI605741B (en) | Circuit board and manufacturing method thereof | |
KR102583276B1 (en) | Semiconductor package substrate, method for manufacturing the same, Semiconductor package and method for manufacturing the same | |
TWI607678B (en) | Interconnection structure and method of manufacturing the same | |
TWI839810B (en) | Semiconductor package substrate structure and manufacturing method thereof | |
TWI512921B (en) | Carrier structure, chip package structure and manufacturing method thereof | |
TWI787111B (en) | Packaged component with composite pin structure and its manufacturing method | |
KR102535353B1 (en) | Semiconductor package substrate, method for manufacturing the same, Semiconductor package and method for manufacturing the same | |
TWI826277B (en) | Packaging method | |
US20240107680A1 (en) | Subtractive method for manufacturing circuit board with fine interconnect | |
JP7461437B1 (en) | Subtractive method for manufacturing circuit boards with fine interconnections |