TW202135167A - Transducer - Google Patents

Abstract

A transducer includes working structures. Each of the working structures includes a first electrode, a cavity defining layer, a second electrode and sealing members. The cavity defining layer is disposed on the first electrode. The cavity defining layer has an oscillating membrane. The oscillating membrane is disposed above the first electrode. The oscillating membrane has a main portion and auxiliary portions extending outward from the main portion. There is a cavity between the main part of the oscillating membrane and the first electrode. There are channels between the auxiliary portions of the oscillating membrane and the first electrode. The auxiliary portions of the oscillating membrane have through holes, respectively. The second electrode is disposed on the main portion of the oscillating membrane. The sealing members are disposed on the cavity defining layer and in the through holes. Channels of a first working structure of the working structures includes channel groups. Channels of each of channel groups are disposed on opposite sides of a cavity of the first working structure. A through hole located on each of the channels of each of channel groups is disposed between the cavity of the first working structure and a cavity of another working structure adjacent to the first working structure.

Description

Transducer

The present invention relates to a transducer.

Ultrasonic transducers include bulk piezoelectric ceramic transducers, capacitive micromechanical ultrasonic transducers and piezoelectric micromechanical ultrasonic transducers. In recent years, many manufacturers and research units have invested in the development of capacitive micromachined ultrasonic transducers. This technology makes use of semiconductor manufacturing processes to miniaturize the size of ultrasonic transducers, and is easier to integrate into various products than traditional bulk piezoelectric materials.

The capacitive micromachined ultrasonic transducer includes a first electrode, an oscillating membrane above the first electrode, and a second electrode on the oscillating membrane, wherein a cavity is formed between the first electrode and the oscillating membrane. The electric field between the first electrode and the second electrode can cause the oscillating membrane to swing in the cavity, whereby ultrasonic waves can be emitted.

One way to make a cavity at present is to first form a sacrificial pattern layer on the substrate, and then form a cavity definition layer to cover the sacrificial pattern layer; then, use an etching solution to remove the sacrificial pattern layer in the cavity definition layer; thereby , Can form multiple cavities. However, when the sacrificial pattern layer in the cavity near the edge of the substrate is removed, the sacrificial pattern layer in the cavity near the middle of the substrate has not been removed. In order to remove all the sacrificial pattern layers in the cavities cleanly, the process time needs to be increased, which is not conducive to mass production. On the other hand, if the process time is not increased, the sacrificial pattern layer remaining in the cavity will reduce the uniformity of the cavity and affect the performance of the capacitive micromachined ultrasonic transducer.

The invention provides a transducer with good performance.

The transducer of an embodiment of the present invention includes a plurality of working structures. Each working structure includes a first electrode, a cavity defining layer, a second electrode, and a plurality of sealing members. The cavity defining layer is disposed on the first electrode. The cavity defining layer has an oscillating membrane. The oscillating membrane is arranged above the first electrode. The oscillating membrane has a main part and a plurality of auxiliary parts extending outward from the main part. There is a cavity between the main part of the oscillating membrane and the first electrode. There are a plurality of channels between the plurality of auxiliary parts of the oscillating membrane and the first electrode, and the plurality of auxiliary parts of the oscillating membrane respectively have a plurality of through holes. The second electrode is arranged on the main part of the oscillating membrane. A plurality of sealing elements are arranged on the cavity defining layer and in the plurality of through holes. The plurality of work structures includes a first work structure. The multiple channels of the first working structure include multiple channel groups. The multiple channels of each channel group are arranged on opposite sides of the cavity of the first working structure. The through holes on each channel of each channel group are arranged between the cavity of the first working structure and the cavity of another adjacent working structure, and the plurality of channel groups of the first working structure are arranged in a staggered manner.

The transducer of another embodiment of the present invention includes a plurality of working structures. Each working structure includes a first electrode, a cavity defining layer, a second electrode, and a plurality of sealing members. The cavity defining layer is disposed on the first electrode. The cavity defining layer has an oscillating membrane. The oscillating membrane is arranged above the first electrode. The oscillating membrane has a main part and a plurality of auxiliary parts extending outward from the main part. There is a cavity between the main part of the oscillating membrane and the first electrode. There are a plurality of channels between the plurality of auxiliary parts of the oscillating membrane and the first electrode, and the plurality of auxiliary parts of the oscillating membrane respectively have a plurality of through holes. The second electrode is arranged on the main part of the oscillating membrane. A plurality of sealing elements are arranged on the cavity defining layer and in the plurality of through holes. The plurality of work structures includes a first work structure. The multiple channels of the first working structure include multiple channel groups. The multiple channels of each channel group are arranged on opposite sides of the cavity of the first working structure. The through holes located on each channel of each channel group are arranged between the cavity of the first working structure and the cavity of another adjacent working structure.

Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.

It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connected" can refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between two elements.

As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the The specific amount of measurement-related error (ie, the limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately" or "substantially" as used herein can be based on optical properties, etching properties or other properties to select a more acceptable range of deviation or standard deviation, and not one standard deviation can be applied to all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

FIG. 1 is a schematic diagram of an ultrasonic probe 1 according to an embodiment of the present invention.

FIG. 2 is a schematic diagram of the transducer 10 according to an embodiment of the invention.

Please refer to FIG. 1 and FIG. 2, in this embodiment, the transducer 10 may include a plurality of units 100. Each unit 100 can receive the first electrical signal and emit sound waves to the outside according to the first electrical signal. Each unit 100 can receive sound waves from the outside and convert the second electric signal according to the sound waves from the outside. For example, in this embodiment, the transducer 10 can be applied to the ultrasonic probe 1 for medical use, but the present invention is not limited to this.

FIG. 3 is a schematic top view of a unit 100 of the transducer 10 according to an embodiment of the present invention.

2 and 3, in this embodiment, each unit 100 of the transducer 10 includes a plurality of working structures U. The multiple first electrodes 120 of the multiple working structures U of the same unit 100 are electrically connected to each other, and the second electrodes 150 of the multiple working structures U of the same unit 100 are electrically connected to each other. In other words, multiple working structures U of the same unit 100 are used to simultaneously transmit/receive sound waves.

Please refer to FIG. 3, a plurality of working structures U of the unit 100 are disposed on the substrate 110. For example, in this embodiment, the material of the substrate 110 may be glass, quartz, organic polymer, or other applicable materials.

FIG. 4 is an enlarged schematic diagram of a working structure U of an embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a working structure U according to an embodiment of the present invention. Fig. 5 corresponds to the section line A-A' of Fig. 4.

FIG. 6 is a schematic cross-sectional view of a working structure U according to an embodiment of the present invention. Fig. 6 corresponds to the section line B-B' of Fig. 4.

FIG. 7 is a schematic cross-sectional view of a working structure U according to an embodiment of the present invention. Fig. 7 corresponds to the section line C-C' of Fig. 4.

Please refer to FIG. 4, FIG. 5 and FIG. 6, each working structure U includes a first electrode 120, a cavity defining layer 130, a plurality of sealing members 140 and a second electrode 150.

The first electrode 120 of each working structure U is disposed on the substrate 110. In this embodiment, the first electrode 120 is, for example, a full-surface electrode, but the invention is not limited to this. The material of the first electrode 120 may be metal (for example, but not limited to: aluminum), metal oxide (for example, but not limited to: indium tin oxide) or other conductive materials.

The cavity defining layer 130 of each working structure U is disposed on the first electrode 120. The cavity defining layer 130 has an oscillating film 131. The oscillating film 131 is disposed above the first electrode 120. The oscillating membrane 131 has a main part 131a and a plurality of auxiliary parts 131b extending outward from the main part 131a. There is a cavity V1 between the main portion 131 a of the oscillating film 131 and the first electrode 120. There are a plurality of channels V2 between the plurality of auxiliary portions 131b of the oscillating film 131 and the first electrode 120. The width W2 of the channel V2 is smaller than the widths W11 and W12 of the cavity V1. For example, in this embodiment, the width W2 of the channel V2 may fall in the range of 3 μm to 8 μm, but the invention is not limited to this.

Please refer to FIG. 4, FIG. 6 and FIG. 7, in addition to the oscillating membrane 131, the cavity defining layer 130 also has a supporting portion 132. In the figure, the oscillating membrane 131 is represented by dots with a lower density, and the support portion 132 is represented by dots with a higher density. The supporting portion 132 of the cavity defining layer 130 is disposed on the first electrode 120; the thickness D2 of the supporting portion 132 is greater than the thickness D1 of the oscillating film 131; the oscillating film 131 is connected to the side of the supporting portion 132 away from the first electrode 120 to Suspended above the first electrode 120.

4 and 5, the plurality of auxiliary portions 131b of the oscillating membrane 131 respectively have a plurality of through holes 130h. In this embodiment, the vertical projection of the through hole 130h of the oscillating film 131 on the substrate 110 may be within the vertical projection of the channel V2 on the substrate 110; that is, the diameter r of the through hole 130h may be smaller than the width W2 of the channel V2 . However, the present invention is not limited to this. In other embodiments, the diameter r of the through hole 130h may also be equal to the width W2 of the channel V2.

In this embodiment, the material of the cavity defining layer 130 is an insulating material, which can be an inorganic material (for example: silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), organic material Or a combination of the above.

4 and 5, a plurality of sealing members 140 of each working structure U are disposed on the cavity defining layer 130 and in the plurality of through holes 130h of the auxiliary portions 131b of the oscillating membrane 131.

4 and 6, the main portion 131a of the oscillating membrane 131 of the cavity defining layer 130 and the sidewall 132a of the supporting portion 132 of the cavity defining layer 130 define a cavity V1. 4 and 7, the auxiliary portion 131b of the oscillating membrane 131 of the cavity defining layer 130 and the sidewall 132b of the supporting portion 132 of the cavity defining layer 130 define a channel V2.

In this embodiment, the material of the plurality of sealing members 140 is an insulating material, which can be an inorganic material (for example: silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), organic Materials or a combination of the above.

4 and 5, the second electrode 150 of each working structure U is disposed on the main part 131a of the oscillating film 131. In this embodiment, the second electrode 150 is located outside the auxiliary portion 131b of the oscillating membrane 131; that is, the second electrode 150 is not provided on the channel V2 and the through hole 130h.

In this embodiment, the second electrode 150 of each working structure U has a first part 151 and a second part 152. The first portion 151 of the second electrode 150 is provided on the main portion 131 a of the oscillating film 131. The second portion 152 of the second electrode 150 is disposed outside the cavity V1. In other words, the second portion 152 of the second electrode 150 is disposed on the supporting portion 132 of the cavity defining layer 130. The width L2 of the second portion 152 of the second electrode 150 in the direction x may be smaller or equal to the width L1 of the first portion 151 of the second electrode 150 in the direction x. For example, in this embodiment, 0.01≤(L2/L1)≤1, but the invention is not limited thereto.

3 and 4, the multiple working structures U are arranged in an array, the multiple main parts 131a of the multiple working structures U in each column are arranged in the direction x, and the multiple main parts of the multiple working structures U in each row The portions 131a are arranged in the direction y, and the direction x and the direction y are staggered. In this embodiment, the multiple second electrodes 150 of the multiple working structures U in the same row are connected to each other; in particular, the multiple first portions 151 of the multiple second electrodes 150 of the multiple working structures U in the same row ( It can also be called multiple thick parts) and multiple second parts 152 (also called multiple thin parts) alternately arranged in the direction y.

In this embodiment, the material of the second electrode 150 may be metal (for example, but not limited to: aluminum), metal oxide (for example, but not limited to: indium tin oxide) or other conductive materials.

4 and 5, the first electrical signal can be applied to the first electrode 120 and the second electrode 150 of the working structure U, the electric field between the first electrode 120 and the second electrode 150 can make the main part of the oscillating film 131 131a swings in the cavity V1 to emit sound waves to the outside; on the other hand, the sound waves from the outside can be transmitted to the main part 131a of the oscillating membrane 131 and swing the main part 131a of the oscillating membrane 131, causing the capacitance to change. The change of the capacitance can obtain a second electrical signal corresponding to the external sound wave. In short, the transducer 10 including a plurality of working structures U is a capacitive micromechanical transducer.

3 and 4, the multiple working structures U of the transducer 10 include a first working structure U1. The multiple channels V2 of the first working structure U1 include multiple channel groups G1, G2, G3, and multiple channels V2-1, V2-2, and V2-3 of each channel group G1, G2, G3 are set in the first working structure. The opposite sides of the cavity V1 of the structure U1. The through hole 130h provided on each channel V2-1, V2-2, V2-3 of each channel group G1, G2, G3 is provided in the cavity V1 of the first working structure U1 and another adjacent working structure Between U's cavity V1.

It is worth noting that during the manufacturing process of the transducer 10, the etching solution can be obtained from the multiple through holes 130h on the multiple channels V2-1, V2-2, and V2-3 of the multiple channel groups G1, G2, and G3. Infiltrate the sacrificial pattern layer (not shown) originally arranged in the multiple channels V2-1, V2-2, V2-3, and then remove it; more importantly, the etching solution will pass through the multiple channel groups G1, G2 The multiple channels V2-1, V2-2, V2-3 of G3 quickly and fully penetrate the sacrificial pattern layer (not shown) originally provided in the cavity V1. Thereby, the sacrificial pattern layer in the cavity V1 can be quickly removed, the sacrificial pattern layer is not easy to remain in the cavity V1, the manufacturing time of the transducer 10 can be shortened, and the uniform performance of the multiple cavities V1 can be improved.

Referring to FIG. 4, in this embodiment, the multiple channel groups G1, G2, G3 of the first working structure U1 can be arranged in a staggered manner. 3 and 4, for example, a plurality of working structures U are arranged in an array, the multiple cavities V1 of the multiple working structures U in each column are arranged in the direction x, and the multiple working structures U in each row are arranged in the direction x. The multiple cavities V1 are arranged in the direction y, and the direction x and the direction y are interlaced; in addition to the multiple channels V2-1 of the channel group G1 arranged in the direction x, the first working structure U1 also has the direction d1 The multiple channels V2-2 of the channel group G2 are set and the multiple channels V2-3 of the channel group G3 are set in the direction d2, where the directions d1 and d2 are staggered with the directions x and y and are not perpendicular to the directions x and y.

3 and 4, in this embodiment, the pseudo-line K passes through the multiple through holes 130h on the multiple channels V2-2 of the channel group G2 of the first working structure U1, the second of the first working structure U1 The extending direction y of the second portion 152 of the electrode 150 and the pseudo-line K have an included angle θ, and 10 ^o ≤θ≤80 ^o .

3 and 4, for example, in this embodiment, the width W11 of a cavity V1 in the direction x may be 20 µm, and the width W12 of a cavity V1 in the direction y may be 20 µm; The width W2 can be 6μm, the multiple cavities V1 are arranged at a pitch P1 in the direction x, and the multiple cavities V1 are arranged at a pitch P2 in the direction y, P1=P2=40μm; the stopper 140 is in the direction The width W3 on x may be 10 µm; the first portion 151 of the second electrode 150 has a width L1 in the direction x, L1=14 µm, and the second portion 152 of the second electrode 150 has a width L2 in the direction x, L2=8 µm ; But the present invention is not limited to this.

In addition, in this embodiment, the vertical projection of the cavity V1 of the working structure U on the substrate 110 is substantially square, and the vertical projection of the channel V2 of the working structure U on the substrate 110 is substantially elongated. However, the present invention is not limited to this. In other embodiments, the cavity V1 and/or the channel V2 of the working structure U can also be designed in other shapes according to actual requirements.

在上式中，f為換能器10發出之聲波的頻率，λ為工作結構U之空腔V1的形狀因子，D1為工作結構U之振盪膜131的厚度，W11為工作結構U之空腔V1的寬度（或稱，直徑），E為工作結構U之振盪膜131的楊氏係數，d為工作結構U之振盪膜131的單位面積質量，ν為工作結構U之振盪膜131的浦松比。4 and 6, the frequency f of the sound wave emitted by the transducer 10 has the following relationship with the structure of the working structure U:

In the above formula, f is the frequency of the sound wave emitted by the transducer 10, λ is the shape factor of the cavity V1 of the working structure U, D1 is the thickness of the oscillating membrane 131 of the working structure U, and W11 is the cavity of the working structure U The width (or diameter) of V1, E is the Young's coefficient of the oscillating membrane 131 of the working structure U, d is the mass per unit area of the oscillating membrane 131 of the working structure U, and ν is the Pusong ratio of the oscillating membrane 131 of the working structure U .

Please refer to FIG. 4, the cavity V1 of the first working structure U1 has a cavity projection area A1 on the substrate 110, and the multiple channels V2-1, V2-2, V2-3 of the first working structure U1 have on the substrate 110 The projected area of the multiple channels, the sum of the projected areas of the multiple channels is A2, the ratio of the sum of the projected areas of the multiple channels to the projected area of the cavity (A2/A1) and the frequency f of the sound wave emitted by the transducer 10 Related.

For example, if the working structure U does not have any channel V2, the frequency of the sound wave emitted by the transducer 10 is f; if the working structure U has a channel V2, and A2/A1=1/4, the transducer 10 emits The frequency f of the sound wave drops to 0.95f; if the working structure U has a channel V2 and A2/A1=1/2, the frequency f of the sound wave emitted by the transducer 10 drops to 0.8f; if the working structure U has a channel V2, and A2/A1=1, the frequency f of the sound wave emitted by the transducer 10 drops to 0.5f. In this embodiment, 0.1≤(A2/A1)≤1.

It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

FIG. 8 is a schematic top view of a unit 100A of the transducer according to an embodiment of the present invention.

The unit 100A of FIG. 8 is similar to the unit 100 of FIG. 3, and the difference between the two is: in the embodiment of FIG. 3, the channel V2 of the first working structure U1 is directly connected to the channel V2 of another adjacent working structure U ; But in the embodiment of FIG. 8, the channel V2 of the first working structure U1 and the channel V2 of another adjacent working structure U are separated from each other. Specifically, in the embodiment of FIG. 8, the plurality of channels V2 of the first working structure U1 and the plurality of channels V2 of another adjacent working structure U are separated by the support portion 132 of the cavity defining layer 130. Independent of each other.

FIG. 9 is a schematic top view of a unit 100B of the transducer according to an embodiment of the present invention.

The unit 100B in FIG. 9 is similar to the unit 100 in FIG. 3, and the difference between the two is: in the embodiment of FIG. 3, the channel V2 of the first working structure U1 is directly connected to the channels V2 of all working structures U located around it; In the embodiment of FIG. 9, the channel V2 of the first working structure U1 is directly connected to the channels V2 of other adjacent working structures U on the same row and the same column, but the channel V2 of the first working structure U1 It is not directly connected to the channel V2 of the other working structure U1 at the upper right, lower right, upper left, and lower left.

FIG. 10 is a schematic top view of a unit 100C of the transducer according to an embodiment of the present invention.

The unit 100C in FIG. 10 is similar to the unit 100 in FIG. 3, and the difference between the two is: in the embodiment of FIG. Directly connected; in the embodiment of FIG. 10, a channel V2-2 of the plurality of channels V2 of the first working structure U1 and another adjacent working structure U (for example: the working structure located at the lower left of the first working structure U1 A channel V2 of the structure U) is directly connected, and a channel V2-3 of the plurality of channels V2 of the first working structure U1 is connected to another adjacent working structure U (for example: the one located at the bottom right of the first working structure U1) One channel V2 of the working structure U) is separated from each other.

FIG. 11 is a schematic top view of a unit 100D of the transducer according to an embodiment of the present invention.

The unit 100D of FIG. 11 is similar to the unit 100 of FIG. 3, and the difference between the two is: the shape of the cavity V1 and the channel V2 of the working structure U of FIG. 11 and the shape of the cavity V1 and the channel V2 of the working structure U of FIG. 3 different. In the embodiment of FIG. 11, the vertical projection of the cavity V1 of the working structure U on the substrate 110 may be rectangular, and the vertical projection of the at least one channel V2 of the working structure U on the substrate 110 may be curved.

FIG. 12 is a schematic top view of a unit 100E of the transducer according to an embodiment of the present invention.

The unit 100E in FIG. 12 is similar to the unit 100D in FIG. 10, and the difference between the two is: in the embodiment of FIG. Direct connection; in the embodiment of FIG. 12, the channel V2 of the first working structure U1 is directly connected to the channel V2 of the other working structure U1 located in the same row and adjacent, but the channel V2 of the first working structure U1 is located in the same column And the channels V2 of other adjacent working structures U1 are separated from each other.

1: Ultrasonic probe 10: Transducer 100, 100A, 100B, 100C, 100D, 100E: unit 110: substrate 120: first electrode 130: Cavity definition layer 130h: Through hole 131: Oscillating Film 131a: main part 131b: Auxiliary Department 132: Support 132a, 132b: side wall 140: Seal 150: second electrode 151: Part One 152: The second part A-A’: Cut line B-B’: Sectional line C-C’: Cut line D1, D2: thickness G1, G2, G3: channel group K: quasi-straight line P1, P2: pitch r: diameter U: Work structure U1: The first working structure V1: Cavity V2, V2-1, V2-2, V2-3: Channel W11, W12, W2, W3, L1, L2: width x, y, d1, d2: direction θ: included angle

FIG. 1 is a schematic diagram of an ultrasonic probe 1 according to an embodiment of the present invention. FIG. 2 is a schematic diagram of the transducer 10 according to an embodiment of the invention. FIG. 3 is a schematic top view of a unit 100 of the transducer 10 according to an embodiment of the present invention. FIG. 4 is an enlarged schematic diagram of a working structure U of an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a working structure U according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a working structure U according to an embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a working structure U according to an embodiment of the present invention. FIG. 8 is a schematic top view of a unit 100A of the transducer according to an embodiment of the present invention. FIG. 9 is a schematic top view of a unit 100B of the transducer according to an embodiment of the present invention. FIG. 10 is a schematic top view of a unit 100C of the transducer according to an embodiment of the present invention. FIG. 11 is a schematic top view of a unit 100D of the transducer according to an embodiment of the present invention. FIG. 12 is a schematic top view of a unit 100E of the transducer according to an embodiment of the present invention.

100: unit

110: substrate

120: first electrode

130: Cavity definition layer

130h: Through hole

131: Oscillating Film

131a: main part

131b: Auxiliary Department

132: Support

140: Seal

150: second electrode

151: Part One

152: The second part

K: quasi-straight line

P1, P2: pitch

U: Work structure

U1: The first working structure

V1: Cavity

V2: Channel

W3: width

x, y, d1, d2: direction

θ: included angle

Claims (18)

A transducer including: Multiple work structures, each of which includes: A first electrode; A cavity defining layer is disposed on the first electrode, wherein the cavity defining layer has an oscillating film, the oscillating film is disposed above the first electrode, the oscillating film has a main part and the main part outwards Extending a plurality of auxiliary parts, a cavity is provided between the main part of the oscillating membrane and the first electrode, a plurality of channels are provided between the auxiliary parts of the oscillating membrane and the first electrode, and the oscillating membrane The auxiliary parts respectively have a plurality of through holes; A second electrode arranged on the main part of the oscillating membrane; and A plurality of sealing elements are arranged on the cavity defining layer and in the through holes; Wherein, the working structures include a first working structure, the channels of the first working structure include a plurality of channel groups, and the plurality of channels of each channel group are arranged opposite to the cavity of the first working structure. On both sides, a through hole located on each channel of each channel group is provided between the cavity of the first working structure and the cavity of another adjacent working structure, and the first The channel groups of a working structure are arranged in a staggered manner. The transducer according to item 1 of the scope of patent application, wherein each of the second electrodes of the working structure has a first part and a second part, and the first part of the second electrode is disposed on the oscillating membrane On the main part of the second electrode, the second part of the second electrode is disposed outside the cavity, and a width of the second part of the second electrode in a direction is smaller than that of the first part of the second electrode A width in this direction. For the transducer described in item 2 of the scope of patent application, a pseudo-line passes through the through holes on the channels of one of the channel groups of the first working structure, and the second electrode of the first working structure An extension direction of the second part of, and the pseudo-line have an included angle θ, and 10 ^o ≤ θ ≤ 80 ^o . For the transducer described in item 2 of the scope of patent application, wherein the width of the first part of the second electrode is L1, the width of the second part of the second electrode is L2, and 0.01 ≤ (L2 /L1) ≤ 1. The transducer according to claim 1, wherein the working structures are arranged on a substrate, and a vertical projection of one of the first working structures and the through hole on the substrate is located on the first working structure Within a vertical projection of the channel on the substrate. In the transducer described in item 1 of the scope of the patent application, a width of each of the channels falls in the range of 3 µm to 8 µm. The transducer according to item 1 of the scope of patent application, wherein at least one channel of the first working structure is directly connected to at least one channel of another adjacent working structure. The transducer according to item 1 of the scope of patent application, wherein at least one channel of the first working structure is separated from at least one channel of another adjacent working structure. The transducer according to item 1 of the scope of patent application, wherein a channel of the first working structure is directly connected to a channel of another adjacent working structure, and the other of the first working structure The channel is separated from another adjacent channel of the working structure. A transducer including: Multiple work structures, each of which includes: A first electrode; A cavity defining layer is disposed on the first electrode, wherein the cavity defining layer has an oscillating film, the oscillating film is disposed above the first electrode, the oscillating film has a main part and the main part outwards Extending a plurality of auxiliary parts, a cavity is provided between the main part of the oscillating membrane and the first electrode, a plurality of channels are provided between the auxiliary parts of the oscillating membrane and the first electrode, and the oscillating membrane The auxiliary parts respectively have a plurality of through holes; A second electrode arranged on the main part of the oscillating membrane; and A plurality of sealing elements are arranged on the cavity defining layer and in the through holes; Wherein, the working structures include a first working structure, the channels of the first working structure include a plurality of channel groups, and the plurality of channels of each channel group are arranged opposite to the cavity of the first working structure. A through hole on both sides of each channel of each channel group is arranged between the cavity of the first working structure and the cavity of another adjacent working structure. The transducer according to claim 10, wherein the second electrode of each working structure has a first part and a second part, and the first part of the second electrode is disposed on the oscillating membrane On the main part of the second electrode, the second part of the second electrode is disposed outside the cavity, and a width of the second part of the second electrode in a direction is smaller than that of the first part of the second electrode A width in this direction. As for the transducer described in item 11 of the scope of patent application, a pseudo-straight line passes through the through holes on the channels of one of the channel groups of the first working structure, and the second electrode of the first working structure An extension direction of the second part of, and the pseudo-line have an included angle θ, and 10 ^o ≤ θ ≤ 80 ^o . As for the transducer described in claim 11, wherein the width of the first part of the second electrode is L1, the width of the second part of the second electrode is L2, and 0.01 ≤ (L2 /L1) ≤ 1. The transducer according to claim 10, wherein the working structures are arranged on a substrate, and a vertical projection of one of the first working structures and the through hole on the substrate is located on the first working structure Within a vertical projection of the channel on the substrate. In the transducer described in item 10 of the scope of patent application, a width of each of the channels falls in the range of 3 µm to 8 µm. The transducer according to claim 10, wherein at least one channel of the first working structure is directly connected to at least one channel of another adjacent working structure. The transducer according to claim 10, wherein at least one channel of the first working structure is separated from at least one channel of another adjacent working structure. The transducer according to item 10 of the scope of patent application, wherein a channel of the first working structure is directly connected to a channel of another adjacent working structure, and the other of the first working structure The channel is separated from another adjacent channel of the working structure.

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