TW202127145A - Device and method for shielding components to be thermally insulated in microlithographic projection exposure apparatuses - Google Patents

Device and method for shielding components to be thermally insulated in microlithographic projection exposure apparatuses Download PDF

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TW202127145A
TW202127145A TW109134513A TW109134513A TW202127145A TW 202127145 A TW202127145 A TW 202127145A TW 109134513 A TW109134513 A TW 109134513A TW 109134513 A TW109134513 A TW 109134513A TW 202127145 A TW202127145 A TW 202127145A
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projection exposure
movable shield
lithographic projection
exposure device
thermally insulated
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TW109134513A
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Chinese (zh)
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托拉夫 葛納
瓊琴 哈傑斯
亞歷安卓 渥夫
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德商卡爾蔡司Smt有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825Mounting of individual elements, e.g. mounts, holders or supports
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Abstract

The invention relates to a microlithographic projection exposure apparatus, in particular for the DUV range (400) or for the EUV range (300), comprising a movable shield (100) and at least one component (110, 210) to be thermally insulated. The movable shield (100) is configured, in an operating pause of the microlithographic projection exposure apparatus (300, 400), for example in the case of maintenance, to lengthen the time duration in which the temperature of the component (110, 210) to be thermally insulated approaches the ambient temperature. The invention additionally relates to a method for thermally insulating at least one component (110, 210) of a microlithographic projection exposure apparatus (300, 400). Firstly, the light source (301, 406) is switched off or shaded in an operating pause of the microlithographic projection exposure apparatus (300, 400). Afterward, the movable shield (100) is moved from a rest position into a functional position in such a way that in the functional position the component (110, 210) to be thermally insulated is enclosed at least regionally by the movable shield (100).

Description

微影投射曝光裝置中用於屏蔽待熱絕緣之構件的元件與方法Element and method for shielding component to be thermally insulated in lithographic projection exposure device

本發明關於一種用於熱絕緣微影投射曝光裝置中的構件的屏蔽。本發明還關於用於熱絕緣微影投射曝光裝置中的構件的方法。The invention relates to a shield for components in a thermally insulated lithographic projection exposure device. The present invention also relates to a method for components in a thermally insulated lithographic projection exposure device.

微影用於生產微結構構件,例如積體電路或LCD。微影製程在所謂的投射曝光裝置中進行,其包含了照明裝置和投射透鏡。由照明裝置所照明的光罩(=遮罩)的影像在此處藉由投射透鏡投射到塗佈有光敏感層(=光阻)並設置在投射透鏡的影像平面中的基板(例如矽晶圓)上,以將光罩結構轉移到基板的光敏感塗層上。Lithography is used to produce microstructured components, such as integrated circuits or LCDs. The lithography process is carried out in a so-called projection exposure device, which includes an illuminating device and a projection lens. The image of the mask (=mask) illuminated by the illuminating device is projected by the projection lens to a substrate (such as silicon crystal) coated with a photosensitive layer (=photoresist) and arranged in the image plane of the projection lens Circle) to transfer the photomask structure to the photosensitive coating on the substrate.

術語微影投射曝光裝置、投射曝光裝置、(EUV或DUV)系統和微影掃描器在下文中為同義詞。The terms lithography projection exposure device, projection exposure device, (EUV or DUV) system and lithography scanner are synonymous hereinafter.

在設計用於DUV範圍(亦即在例如193 nm或248 nm的波長下)的投射透鏡中,較佳使用透鏡元件作為成像過程的光學元件。為了獲得更高的微影光學單元的解析度,多年來已使用針對EUV範圍所設計的投射透鏡,該投射透鏡在例如約13.5 nm或7 nm的波長下操作。In a projection lens designed for the DUV range (that is, at a wavelength of, for example, 193 nm or 248 nm), it is preferable to use a lens element as an optical element for the imaging process. In order to obtain a higher resolution of the lithography optical unit, a projection lens designed for the EUV range has been used for many years, and the projection lens operates at a wavelength of, for example, about 13.5 nm or 7 nm.

在針對EUV範圍所設計的這類投射透鏡中,由於缺乏合適的透光折射材料,因此使用反射鏡作為成像過程的光學元件。該反射鏡以幾乎垂直入射或掠入射的方式操作。由於反射鏡對光射線的反射作用,反射鏡比透鏡元件對位置的敏感度要高得多。在這方面,反射鏡傾斜度2倍轉換為射線方向的變化,而在透鏡元件的情況下,通常發生的是相當大地補償了前後側之間的折射射線方向影響的變化。In this type of projection lens designed for the EUV range, due to the lack of suitable light-transmitting refractive materials, a mirror is used as an optical element in the imaging process. The mirror operates at almost normal incidence or grazing incidence. Due to the reflection effect of the reflector on the light rays, the reflector is much more sensitive to the position than the lens element. In this regard, the mirror tilt twice is converted into a change in the ray direction, and in the case of a lens element, what usually happens is that the change in the direction of the refracted ray between the front and rear sides is substantially compensated for.

對反射鏡形狀的顯著影響來自於反射鏡材料的熱膨脹。因此,使用具有低熱膨脹係數的材料(例如Zerodur或ULE(超低膨脹))用於EUV反射鏡。這種材料對溫度變化的反應比玻璃或石英玻璃弱得多。然而,在可用的像差預算範圍內,仍可能會產生可觀的誤差貢獻。該誤差貢獻由材料體積中的不均勻溫度分佈和所謂的零交叉溫度(ZCT)的不均勻性的影響所組成,例如由於ULE材料中的SiO2 和TiO2 之間化學計量的變化。相對於微影投射曝光裝置的預期操作溫度,局部和全局溫度變化都可能引起像差,這些像差只能由操縱器部分地校正。The significant influence on the shape of the mirror comes from the thermal expansion of the mirror material. Therefore, a material with a low thermal expansion coefficient (such as Zerodur or ULE (ultra low expansion)) is used for EUV mirrors. This material responds much weaker to temperature changes than glass or quartz glass. However, within the available aberration budget, there may still be a considerable error contribution. This error contribution is composed of the influence of the uneven temperature distribution in the material volume and the so-called zero-crossing temperature (ZCT) inhomogeneity, for example due to the stoichiometric change between SiO 2 and TiO 2 in the ULE material. Relative to the expected operating temperature of the lithographic projection exposure device, both local and global temperature changes may cause aberrations, which can only be partially corrected by the manipulator.

操作狀態通常由EUV系統在操作波長(即例如在13.5 nm的波長)下的假定最大功率來定義。如果沒有達到該最大功率,例如因為使用了平均反射率較低的遮罩,則例如根據現有技術,紅外光加熱器可實現「加裝」加熱並確保反射鏡在接近平均零交叉溫度下操作,在這種情況下,由於相對於該溫度的溫度差的二次變形相依性,因此它們特別不敏感。The operating state is usually defined by the assumed maximum power of the EUV system at the operating wavelength (ie, for example, at a wavelength of 13.5 nm). If the maximum power is not reached, for example, because a mask with a low average reflectivity is used, for example, according to the prior art, infrared light heaters can achieve "additional" heating and ensure that the reflector operates at a temperature close to the average zero-crossing temperature. In this case, they are particularly insensitive due to the secondary deformation dependence of the temperature difference with respect to this temperature.

微影掃描器的一重要品質特徵為其有效時間,在該有效時間中,可實際上以高產出製造半導體構件(「正常運行時間(uptime)」)。然而,由於各種原因,將不時需要維護工作,在該過程中,微影掃描器被打開,並例如進行零件的檢查、清潔或更換。儘管在真空中在封閉的微影掃描器中獲得了高的熱穩定性,但當微影掃描器已經打開時,構件(例如反射鏡)與無塵室環境接觸。無塵室環境可具有相對較高的溫度公差,也就是說,例如在微影掃描器的內部,其可明顯低於或高於較佳為22℃的操作溫度。An important quality feature of a lithographic scanner is its effective time, during which semiconductor components can actually be manufactured with high output ("uptime"). However, due to various reasons, maintenance work will be required from time to time. During the process, the lithography scanner is opened, and parts are inspected, cleaned, or replaced, for example. Although high thermal stability is achieved in a closed lithography scanner in a vacuum, when the lithography scanner has been opened, components (such as mirrors) are in contact with the clean room environment. The clean room environment may have a relatively high temperature tolerance, that is, for example, inside the lithography scanner, it may be significantly lower or higher than the operating temperature, which is preferably 22°C.

在維護過程中,構件(特別是反射鏡)的溫度會適應無塵室環境的溫度。微影掃描器打開的時間越長,亦即維護窗的長度越長,反射鏡的溫度就越適應於無塵室環境的溫度。一旦維護工作結束,反射鏡的溫度可能會大大地偏離其預期的操作溫度。相應更高的是,它對局部溫度變化的敏感性,例如在給定的EUV典型吸收係數(在EUV光的掠射入射情況下為15%至在EUV光的法線入射情況下為40%之間)的情況下,由於不均勻照明而最晚在操作期間可能建立的。同時,熱膨脹係數的局部差異有更大程度的效果。總而言之,存在較高的像差水平,而這對於高產品產量是不可接受的。During the maintenance process, the temperature of the components (especially the reflector) will adapt to the temperature of the clean room environment. The longer the lithography scanner is opened, that is, the longer the length of the maintenance window, the more the temperature of the reflector is adapted to the temperature of the clean room environment. Once the maintenance work is over, the temperature of the mirror may greatly deviate from its expected operating temperature. Correspondingly higher is its sensitivity to local temperature changes, such as a given EUV typical absorption coefficient (15% in the case of glancing incidence of EUV light to 40% in the case of normal incidence of EUV light Between), it may be established during operation at the latest due to uneven illumination. At the same time, the local difference in the coefficient of thermal expansion has a greater effect. All in all, there is a high level of aberration, which is unacceptable for high product yields.

無塵室環境的溫度和環境溫度在下文中為同義詞。The temperature of the clean room environment and the ambient temperature are synonymous in the following.

在關閉微影掃描器並再次啟動之後,反射鏡的溫度將逐漸地再次調整為預期值,其部分是在上述反射鏡加熱器的影響下。由於反射鏡構成了龐大的光學部件,因此它們的時間常數為數小時至幾天,以使其溫度重新適應。高體積是由於高校正集光率、部分使用掠入射反射鏡(穿過光導管的傾斜截面的面積大於垂直截面的面積)、以及出於高剛度的目的而需要實現相當大的反射鏡厚度。該高剛度防止在將力和力矩引入時發生變形,用於在操作期間的反射鏡的位置校正和最佳化。總而言之,高時間常數使得微影掃描器在維護窗之後再次達到其全部性能之前,需要相當長的等待時間。有效時間的品質標準「受損」。After the lithography scanner is turned off and restarted, the temperature of the mirror will gradually be adjusted to the expected value again, partly under the influence of the above-mentioned mirror heater. Since the mirrors constitute a huge optical component, their time constant is a few hours to a few days to adjust their temperature again. The high volume is due to the high correction concentration, the partial use of grazing incidence mirrors (the area of the oblique cross-section through the light pipe is larger than the area of the vertical cross-section), and the need to achieve a considerable thickness of the mirror for the purpose of high rigidity. This high stiffness prevents deformation when introducing forces and moments, and is used for correcting and optimizing the position of the mirror during operation. All in all, the high time constant makes the lithography scanner need a considerable waiting time before it reaches its full performance again after the maintenance window. The quality standard of effective time is "damaged".

鑑於上述問題,所建立的目的為提供解決上述問題的元件和方法,特別是縮短微影掃描器在維護窗之後的等待時間。In view of the above-mentioned problems, the established purpose is to provide components and methods to solve the above-mentioned problems, especially to shorten the waiting time of the lithographic scanner after the maintenance window.

根據本發明,上述目的是通過一種微影投射曝光裝置來實現的,特別是針對DUV範圍或EUV範圍,其包含至少一可移動屏蔽並包含至少一待熱絕緣的構件。至少一可移動屏蔽係組態為在微影投射曝光裝置的操作暫停中(例如在維護的情況下)延長至少一待熱絕緣的構件的溫度接近環境溫度的持續時間。這是特別有利的,因為結果是,在再次啟動微影投射曝光裝置之後,其有效時間被延長。According to the present invention, the above objective is achieved by a lithographic projection exposure device, especially for the DUV range or EUV range, which includes at least one movable shield and includes at least one component to be thermally insulated. The at least one movable shield is configured to extend the duration of the temperature of the at least one component to be thermally insulated close to the ambient temperature when the operation of the lithographic projection exposure apparatus is suspended (for example, in the case of maintenance). This is particularly advantageous because, as a result, after the lithographic projection exposure device is activated again, its effective time is prolonged.

在一具體實施例中,待熱絕緣的構件包含至少一反射鏡。反射鏡係設計用於反射來自EUV範圍的電磁輻射。本發明在反射鏡上的應用是特別有利的,因為反射鏡(如上所述)對溫度變化的反應特別地「敏感」。In a specific embodiment, the component to be thermally insulated includes at least one reflector. The reflector is designed to reflect electromagnetic radiation from the EUV range. The application of the present invention to mirrors is particularly advantageous because the mirrors (as described above) are particularly "sensitive" to the response to temperature changes.

在一具體實施例中,待熱絕緣的構件包含至少一安裝技術元件。對於多種應用,在修理或交換過程中,圍繞光學元件的安裝技術及/或與光學元件接觸連接的致動器系統必須盡可能保持熱穩定。本發明在安裝技術元件上的應用是特別有利的。在本申請案中,術語「安裝技術元件」包含安裝技術及/或與光學元件接觸連接的致動器系統。在這種情況下,安裝技術元件可為被動式或可致動的。In a specific embodiment, the component to be thermally insulated includes at least one mounting technology element. For many applications, during repair or exchange, the mounting technology around the optical element and/or the actuator system in contact with the optical element must be as thermally stable as possible. The application of the invention to mounting technical components is particularly advantageous. In this application, the term "mounting technology element" includes mounting technology and/or an actuator system connected in contact with an optical element. In this case, the mounting technology element can be passive or actuatable.

在一具體實施例中,可移動遮罩的材料包含至少一熱絕緣體。由於其低的導熱係數,所以熱絕緣體特別適合於熱絕緣。在當前情況下,熱絕緣是指構件的熱屏蔽,特別是在打開微影投射曝光裝置時構件的溫度高於環境溫度的情況下、以及在構件溫度低於環境溫度的情況下。熱絕緣體的選擇是有利的,因為結果為被屏蔽構件的溫度特別緩慢地接近環境溫度。屏蔽可包含例如PTFE(聚四氟乙烯,導熱係數為0.24 W/(m·K))、POM(聚甲醛,導熱係數為0.31 W/(m·K))、及/或矽酸鹽陶瓷(導熱係數為2-4 W/ m·K)。In a specific embodiment, the material of the movable shield includes at least one thermal insulator. Due to its low thermal conductivity, thermal insulators are particularly suitable for thermal insulation. In the current situation, thermal insulation refers to the thermal shielding of components, especially when the temperature of the component is higher than the ambient temperature when the lithographic projection exposure device is turned on, and when the temperature of the component is lower than the ambient temperature. The choice of thermal insulator is advantageous because the result is that the temperature of the shielded member approaches the ambient temperature particularly slowly. The shield can include, for example, PTFE (polytetrafluoroethylene, with a thermal conductivity of 0.24 W/(m·K)), POM (polyoxymethylene, with a thermal conductivity of 0.31 W/(m·K)), and/or silicate ceramics ( The thermal conductivity is 2-4 W/ m·K).

為了進一步改善熱絕緣性,可移動屏蔽在其面對待熱絕緣的構件的一側上可設置有至少一塗層,其至少部分地反射在紅外光範圍內的電磁輻射。附加地或替代地,可移動屏蔽在其背離待熱絕緣的構件的一側上可設置有至少一塗層,其至少部分地反射從周圍環境發出的紅外光範圍內的電磁輻射。結果,可移動屏蔽的加熱可有利地減慢。In order to further improve the thermal insulation, the movable shield may be provided with at least one coating on the side facing the component to be thermally insulated, which at least partially reflects electromagnetic radiation in the infrared range. Additionally or alternatively, the movable shield may be provided with at least one coating on its side facing away from the component to be thermally insulated, which at least partially reflects electromagnetic radiation in the range of infrared light emitted from the surrounding environment. As a result, the heating of the movable shield can be advantageously slowed down.

在一具體實施例中,可移動屏蔽在微影投射曝光裝置的操作暫停中至少局部地及/或至少有時包圍待熱絕緣的構件。這是有利的,因為以這種方式,在由構件和屏蔽之間的區域所形成的體積與無塵室環境之間只發生更少的交換。In a specific embodiment, the movable shield at least partially and/or at least sometimes surrounds the member to be thermally insulated during the operation pause of the lithographic projection exposure apparatus. This is advantageous because in this way only less exchange takes place between the volume formed by the area between the component and the shield and the clean room environment.

在一具體實施例中,在微影投射曝光裝置的操作暫停中,可移動屏蔽與待熱絕緣構件分開1 mm到20 mm之間的距離,較佳為2 mm到5 mm之間的距離。上述值的範圍是有利的,因為,一方面,在操作暫停期間,可移動屏蔽旨在配置為盡可能地靠近待熱絕緣的構件,但另一方面,距離必須足夠大,使得在引入期間以及在再次移回的過程中,可移動屏蔽不會與待熱絕緣構件發生碰撞。In a specific embodiment, while the operation of the lithographic projection exposure apparatus is suspended, the movable shield is separated from the member to be thermally insulated by a distance of 1 mm to 20 mm, preferably a distance of 2 mm to 5 mm. The above-mentioned range of values is advantageous because, on the one hand, during operation pauses, the movable shield is intended to be configured as close as possible to the member to be thermally insulated, but on the other hand, the distance must be large enough so that during introduction and In the process of moving back again, the movable shield will not collide with the insulating member to be heated.

在一具體實施例中,可移動屏蔽具有至少一空腔,其填充有流體,較佳為氣體,特別是空氣。這是有利的,因為結果為可進一步降低導熱係數。換句話說,與沒有流體填充的空腔的屏蔽相比,進一步提高了熱絕緣性。In a specific embodiment, the movable shield has at least one cavity, which is filled with fluid, preferably gas, especially air. This is advantageous because the result is that the thermal conductivity can be further reduced. In other words, compared with the shielding of a cavity without fluid filling, the thermal insulation is further improved.

在打開微影投射曝光裝置之後,由於吸收了從待熱絕緣構件發出的紅外光輻射及/或由於與無塵室環境接觸,可移動屏蔽本身的溫度也緩慢地接近環境溫度。此方法發生得越慢,導熱係數就越低。以下等式適用於與其相關的時間常數: τ = (mcp )/αAO After the lithographic projection exposure device is turned on, the temperature of the movable shield itself is slowly approaching the ambient temperature due to the absorption of the infrared radiation emitted from the insulating member to be heated and/or due to the contact with the clean room environment. The slower this method occurs, the lower the thermal conductivity. The following equation applies to the time constant associated with it: τ = (mc p )/αA O

在此情況下,m表示屏蔽的質量,cp 表示其比熱容量,α表示其傳熱係數,且AO 表示其表面積。In this case, m represents the quality of the shield, c p represents its specific heat capacity, α represents its heat transfer coefficient, and A O represents its surface area.

在各種具體實施例中,可移動屏蔽係發展用以能夠以有利的方式影響其熱絕緣。為此目的,提出了用於調節可移動屏蔽的溫度的措施,特別是在其功能位置,亦即當微影掃描器已打開時。此處的溫度調節明確地意味著加熱及/或冷卻。在這點上,如果在單一微影掃描器中有複數個可移動屏蔽,則可對可移動屏蔽進行不同的溫度調節。In various embodiments, a movable shield is developed to be able to influence its thermal insulation in an advantageous way. For this purpose, measures are proposed for adjusting the temperature of the movable shield, especially in its functional position, that is, when the lithographic scanner is already switched on. The temperature adjustment here clearly means heating and/or cooling. In this regard, if there are multiple movable shields in a single lithographic scanner, different temperature adjustments can be made to the movable shields.

特別地,可藉由與蓄熱器接觸來調節屏蔽的溫度。蓄熱器可包含物質,特別是蠟,其由於吸收了熔化潛熱(=熔化焓)而從固態轉變為液態。用於該物質的儲存器保持可用。一旦物質完全融化,便會更換儲存器。In particular, the temperature of the shield can be adjusted by contact with the heat accumulator. The heat accumulator may contain substances, especially waxes, which change from solid to liquid due to the absorption of latent heat of fusion (= enthalpy of fusion). The reservoir for this substance remains available. Once the substance has completely melted, the reservoir will be replaced.

替代地或附加地,溫度調節介質可在可移動屏蔽的體積中流動。為此目的,必須在可移動屏蔽的內部形成空腔,特別是管道,並有溫度調節介質在其中流動。Alternatively or additionally, the temperature regulating medium may flow in the volume of the movable shield. For this purpose, a cavity, especially a pipe, must be formed inside the movable shield, and a temperature-regulating medium must flow in it.

替代地或附加地,管道可配置在可移動屏蔽的表面上。管道可具有曲折的結構並可焊接。溫度調節介質在管道中引導。Alternatively or additionally, the duct may be arranged on the surface of the movable shield. The pipe can have a tortuous structure and can be welded. The temperature regulating medium is guided in the pipeline.

替代地或附加地,有可能藉由在可移動屏蔽中及/或之上的電阻線來實現對可移動屏蔽的電加熱。Alternatively or additionally, it is possible to achieve electrical heating of the movable shield by means of resistance wires in and/or on the movable shield.

在一具體實施例中,微影投射曝光裝置係實施使得在操作暫停中,特別是在操作暫停的一開始,可移動屏蔽(例如藉由致動器)可在待熱絕緣的構件的方向上從靜止位置滑動及/或折疊至功能位置。在屏蔽的靜止位置,光源(特別是EUV光源)被打開,並藉由微影投射曝光裝置的反射鏡系統轉傳至晶圓。在屏蔽的功能位置中,光源被關閉或遮蔽,且微影投射曝光裝置至少部分地開啟。In a specific embodiment, the lithographic projection exposure device is implemented so that during operation pause, especially at the beginning of the operation pause, the movable shield (for example, by an actuator) can be in the direction of the member to be thermally insulated Slide and/or fold from the rest position to the functional position. In the static position of the shield, the light source (especially the EUV light source) is turned on and transferred to the wafer by the mirror system of the lithographic projection exposure device. In the shielded functional position, the light source is turned off or shielded, and the lithographic projection exposure device is at least partially turned on.

在一具體實施例中,可移動屏蔽包含至少一撓曲件,特別是旋轉接頭、及/或腿彈簧。這是有利的,因為不會發生磨損,特別是在撓曲件的移動期間,因此在微影投射曝光裝置中不會產生污染物。In a specific embodiment, the movable shield includes at least one flexure, especially a rotating joint, and/or a leg spring. This is advantageous because wear does not occur, especially during the movement of the flexure, and therefore no contaminants are generated in the lithographic projection exposure device.

在一具體實施例中,可移動屏蔽沿著配置在微影投射曝光裝置的光學使用區域之外的引導件移動。移動較佳係沿至少一導軌進行。這是有利的,因為在移動期間可能發生的磨損至少部分地保持遠離光學使用區域。In a specific embodiment, the movable shield moves along a guide member arranged outside the optical use area of the lithographic projection exposure device. The movement is preferably carried out along at least one guide rail. This is advantageous because the wear that may occur during movement is at least partially kept away from the optical use area.

在一具體實施例中,提供了至少一另外的溫度調節源。較佳地,溫度調節源為紅外光輻射器。附加的溫度調節源的使用可有利地與上述用於調節可移動屏蔽的溫度的所有措施相結合。In a specific embodiment, at least one additional temperature adjustment source is provided. Preferably, the temperature adjustment source is an infrared light radiator. The use of an additional temperature adjustment source can be advantageously combined with all the measures described above for adjusting the temperature of the movable shield.

在EUV範圍內的微影投射曝光裝置的操作溫度約為22℃。然而,待熱絕緣的反射鏡的操作溫度可能偏離22°C。反射鏡溫度的公差範圍係指定為15°C至29°C。在上述公差範圍內,在同一個微影投射曝光裝置中的各種反射鏡的操作溫度可能會彼此偏離。The operating temperature of the lithographic projection exposure device in the EUV range is about 22°C. However, the operating temperature of the mirror to be thermally insulated may deviate from 22°C. The tolerance range of the reflector temperature is specified from 15°C to 29°C. Within the above tolerance range, the operating temperatures of various mirrors in the same lithographic projection exposure device may deviate from each other.

根據本發明,上述目的也藉由用以對微影投射曝光裝置的至少一構件進行熱絕緣的方法來實現。此方法可根據兩個替代具體實施例來執行:According to the present invention, the above object is also achieved by a method for thermally insulating at least one component of the lithographic projection exposure device. This method can be implemented according to two alternative specific embodiments:

首先,光源被關閉或遮蔽,例如在微影投射曝光裝置的操作暫停中。First, the light source is turned off or shielded, for example, while the operation of the lithographic projection exposure device is suspended.

在第一具體實施例中,隨後較佳地藉由致動器的作用將至少一可移動屏蔽從靜止位置移動到功能位置,特別地使得在功能位置處,待熱絕緣的構件至少部分地由可移動屏蔽所包圍。之後,微影投射曝光裝置可至少局部地打開,特別是出於維修目的。在維修後,可再次關閉微影投射曝光裝置。之後,可移動屏蔽可較佳地藉由使用致動器而從功能位置移回至靜止位置。In the first embodiment, the at least one movable shield is then preferably moved from the rest position to the functional position by the action of an actuator, in particular so that at the functional position, the component to be thermally insulated is at least partially Surrounded by a removable shield. Afterwards, the lithographic projection exposure device can be opened at least partially, especially for maintenance purposes. After maintenance, the lithographic projection exposure device can be turned off again. Afterwards, the movable shield can preferably be moved back from the functional position to the rest position by using an actuator.

在替代的第二具體實施例中,緊接在光源被關閉或遮蔽之後,微影投射曝光裝置係至少部分地打開。只有在打開之後,至少一可移動屏蔽盡可能快速地從靜止位置移動到功能位置。屏蔽的這種移動可藉由致動器或手動地實現。維修後,可藉由致動器或手動地將可移動屏蔽從功能位置移回靜止位置。之後,可再次關閉微影投射曝光裝置。In an alternative second embodiment, immediately after the light source is turned off or shielded, the lithographic projection exposure device is at least partially opened. Only after opening, at least one movable shield is moved from the rest position to the functional position as quickly as possible. This movement of the shield can be achieved by an actuator or manually. After maintenance, the movable shield can be moved back to the rest position from the functional position by means of an actuator or manually. After that, the lithographic projection exposure device can be closed again.

最後,在兩個替代具體實施例中,可再次打開光源或可再次移除遮蔽。Finally, in two alternative embodiments, the light source can be turned on again or the shade can be removed again.

在執行了上述方法步驟之後,與不使用可移動屏蔽的情況相比,在打開之後,微影投射曝光裝置可再次更快地進行操作。After performing the above method steps, the lithographic projection exposure device can operate faster again after being opened, compared with the case where the movable shield is not used.

圖1a顯示了用於DUV範圍或用於EUV範圍的根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其具有處於靜止位置的滑動式可移動屏蔽100。特別地,顯示了可移動屏蔽100和待熱絕緣的構件110。在當前情況下,待熱絕緣的構件110為一反射鏡,特別是設計用以反射來自EUV範圍的電磁輻射。反射鏡110由具有機械裝置及/或致動器系統的安裝技術元件210保持及/或致動。安裝技術元件210本身鏈接到承載結構114,並由承載結構114所承載。至少一可移動屏蔽100係組態為在微影投射曝光裝置300、400的操作暫停中(例如在維護的情況下),延長待熱絕緣構件110的溫度接近環境溫度的的持續時間。可移動屏蔽100的材料包含至少一熱絕緣體,較佳為PTFE及/或POM及/或矽酸鹽陶瓷。可移動屏蔽100可沿導軌111引導,導軌111較佳配置在光學使用區域的外部。可移動屏蔽100較佳藉由致動器122移動。然而,在不使用致動器122的情況下,也可能進行可移動屏蔽100的手動移動。Figure 1a shows a schematic diagram of an excerpt of a lithographic projection exposure device 400, 300 according to the present invention for the DUV range or for the EUV range, which has a sliding movable shield 100 in a stationary position. In particular, the movable shield 100 and the member 110 to be thermally insulated are shown. In the current situation, the component 110 to be thermally insulated is a mirror, especially designed to reflect electromagnetic radiation from the EUV range. The mirror 110 is held and/or actuated by a mounting technology element 210 having a mechanical device and/or an actuator system. The installation technical element 210 itself is linked to the carrying structure 114 and is carried by the carrying structure 114. The at least one movable shield 100 is configured to prolong the duration of the temperature of the insulating member 110 to be heated close to the ambient temperature when the operation of the lithographic projection exposure apparatus 300, 400 is suspended (for example, in the case of maintenance). The material of the movable shield 100 includes at least one thermal insulator, preferably PTFE and/or POM and/or silicate ceramics. The movable shield 100 can be guided along a guide rail 111, and the guide rail 111 is preferably arranged outside the optical use area. The movable shield 100 is preferably moved by an actuator 122. However, it is also possible to perform manual movement of the movable shield 100 without using the actuator 122.

圖1b顯示了用於DUV範圍或EUV範圍的根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其具有可在導軌111上滑動的處於功能位置的屏蔽100。在微影投射曝光裝置400、300的操作暫停中,特別是在操作暫停的一開始,藉由特別是致動器122將可移動屏蔽100從靜止位置沿待熱絕緣構件110的方向移動到功能位置。在微影投射曝光裝置的操作暫停中,可移動屏蔽100至少局部地及/或至少有時包圍待熱絕緣構件110。在微影投射曝光裝置的操作暫停中,可移動屏蔽100與待熱絕緣構件110相距的距離介於1 mm到20 mm、較佳介於2 mm到5 mm。FIG. 1b shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus 400, 300 according to the present invention for the DUV range or the EUV range, which has a shield 100 in a functional position that can be slid on a guide rail 111. In the operation suspension of the lithographic projection exposure apparatus 400, 300, especially at the beginning of the operation suspension, the movable shield 100 is moved from the stationary position along the direction of the insulating member 110 to be heated to the function by the actuator 122 in particular. Location. When the operation of the lithographic projection exposure apparatus is suspended, the movable shield 100 at least partially and/or at least sometimes surrounds the member 110 to be insulated. When the operation of the lithographic projection exposure apparatus is suspended, the distance between the movable shield 100 and the insulating member 110 to be heated is between 1 mm and 20 mm, preferably between 2 mm and 5 mm.

圖2a顯示了根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其中折疊式的可移動屏蔽100處於靜止位置。可移動屏蔽100包含撓曲件102,其實施為例如旋轉接頭及/或腿彈簧。設置了致動器122,用以將可移動屏蔽100從靜止位置折疊到功能位置。Fig. 2a shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus 400, 300 according to the present invention, in which the foldable movable shield 100 is in a stationary position. The movable shield 100 includes a flexure 102 which is implemented as, for example, a swivel joint and/or leg spring. An actuator 122 is provided to fold the movable shield 100 from the rest position to the functional position.

圖2b顯示了根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其具有處於功能位置的折疊式可移動屏蔽100。在微影投射曝光裝置的操作暫停中,特別是在操作暫停的一開始,藉由致動器122或手動地將可移動屏蔽100從靜止位置沿待熱絕緣構件110的方向折疊至功能位置。Fig. 2b shows a schematic diagram of an excerpt of the lithographic projection exposure device 400, 300 according to the present invention, which has a foldable movable shield 100 in a functional position. During the operation suspension of the lithographic projection exposure apparatus, especially at the beginning of the operation suspension, the movable shield 100 is folded from the stationary position along the direction of the insulating member 110 to be heated to the functional position by the actuator 122 or manually.

圖3顯示了根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其具有已滑入的可移動屏蔽100以及額外的溫度調節源104。額外的溫度調節源104可實施為例如紅外光 (106) 輻射器,其調節可移動屏蔽100和待絕緣構件110之間區域的溫度。FIG. 3 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus 400, 300 according to the present invention, which has a movable shield 100 that has been slid in and an additional temperature adjustment source 104. The additional temperature adjustment source 104 may be implemented as, for example, an infrared light (106) radiator, which adjusts the temperature of the area between the movable shield 100 and the member 110 to be insulated.

圖4顯示了根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其具有已滑入的可移動屏蔽100,其中可移動屏蔽100在其體積中具有空腔108。可特別地藉助於輔助設備將流體109填入空腔108,以有利地進一步降低可移動屏蔽100的導熱係數。4 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus 400, 300 according to the present invention, which has a movable shield 100 that has been slid in, wherein the movable shield 100 has a cavity 108 in its volume. The fluid 109 can be filled into the cavity 108 by means of an auxiliary device, in order to advantageously further reduce the thermal conductivity of the movable shield 100.

圖5顯示了根據本發明的微影投射曝光裝置400、300的摘錄的示意圖,其具有已滑入的可移動屏蔽100,其中溫度調節介質119(較佳為水或空氣)流過空腔108。可藉由溫度調節介質119來設定可移動屏蔽100的溫度,亦即可進行加熱及冷卻。5 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus 400, 300 according to the present invention, which has a movable shield 100 that has been slid in, in which a temperature adjustment medium 119 (preferably water or air) flows through the cavity 108 . The temperature of the movable shield 100 can be set by the temperature adjustment medium 119, that is, heating and cooling can be performed.

圖6顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有已滑入的可移動屏蔽100,其中可移動屏蔽100(特別是在其體積中)具有導電加熱線107。該加熱線107較佳為規則地配置。FIG. 6 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus according to the present invention, which has a movable shield 100 that has been slid in, wherein the movable shield 100 (especially in its volume) has a conductive heating wire 107. The heating wire 107 is preferably arranged regularly.

圖7顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有已滑入的可移動屏蔽100,其中可移動屏蔽100與蓄熱器105接觸。可移動屏蔽100可藉由與蓄熱器105的接觸來進行溫度調節。FIG. 7 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus according to the present invention, which has a movable shield 100 that has been slid in, wherein the movable shield 100 is in contact with the heat accumulator 105. The movable shield 100 can be temperature-regulated by contact with the heat accumulator 105.

圖8顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有已滑入的可移動屏蔽100,其中溫度調節介質119(較佳為空氣或水)在管路103中流動,其中管路103被焊接到可移動屏蔽100上。FIG. 8 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus according to the present invention, which has a movable shield 100 that has been slid in, in which a temperature adjustment medium 119 (preferably air or water) flows in the pipeline 103, wherein The pipe 103 is welded to the movable shield 100.

圖9顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有在功能位置的已滑入的屏蔽100。可移動屏蔽100在其面對待熱絕緣構件110的一側上具有塗層101,該塗層101至少部分地反射從待熱絕緣構件110發出的在紅外光範圍的電磁輻射。附加地或替代地,可移動屏蔽100在其背離待熱絕緣構件110的一側上可具有塗層113,其至少部分地反射從周圍環境發出的在紅外光範圍的電磁輻射。Fig. 9 shows a schematic diagram of an excerpt of the lithographic projection exposure apparatus according to the present invention, with the shield 100 slid in in a functional position. The movable shield 100 has a coating 101 on its side facing the member 110 to be thermally insulated, and the coating 101 at least partially reflects electromagnetic radiation in the infrared light range emitted from the member 110 to be thermally insulated. Additionally or alternatively, the movable shield 100 may have a coating 113 on its side facing away from the member 110 to be thermally insulated, which at least partially reflects electromagnetic radiation in the infrared range emitted from the surrounding environment.

圖10a以截面圖顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有在功能位置的已折疊或在樞轉(140)的可移動屏蔽100。在折入後,可移動屏蔽100可線性地定位130。線性定位能力130使得有可能設定屏蔽100與待熱絕緣構件210之間的距離。在當前情況下,待熱絕緣構件210為安裝技術元件。顯示了一可移動蓋100,其在外圍圍繞光學元件110並至少局部地覆蓋安裝技術元件210。在本示例性具體實施例中,安裝技術元件210應理解為與光學元件110接觸連接或鄰接光學元件的機構或致動器系統。如前文已經提到的,圖式顯示了蓋100的(線性)定位方向130和蓋100的樞轉方向140。顯示了兩個額外的溫度調節源104,其功能已在圖3的示例性具體實施例中進行了說明。當然,本發明也可在沒有額外的溫度調節源104的情況下實現。Fig. 10a shows a schematic cross-sectional view of an excerpt of a lithographic projection exposure apparatus according to the present invention, which has a movable shield 100 folded or pivoted (140) in a functional position. After being folded in, the movable shield 100 can be positioned 130 linearly. The linear positioning capability 130 makes it possible to set the distance between the shield 100 and the member 210 to be insulated. In the current situation, the to-be-heated insulation member 210 is an installation technical element. A removable cover 100 is shown, which surrounds the optical element 110 at the periphery and at least partially covers the mounting technology element 210. In this exemplary embodiment, the mounting technical element 210 should be understood as a mechanism or actuator system that is in contact with or adjacent to the optical element 110. As already mentioned above, the diagram shows the (linear) positioning direction 130 of the cover 100 and the pivoting direction 140 of the cover 100. Two additional temperature adjustment sources 104 are shown, the functions of which have been described in the exemplary embodiment of FIG. 3. Of course, the present invention can also be implemented without an additional temperature adjustment source 104.

圖10b以平面圖顯示了反射鏡110的示意圖,其具有相關聯的安裝技術元件210,不具有可折疊屏蔽或具有處於靜止位置的可折疊屏蔽100(圖10b中未示出)。Figure 10b shows a schematic plan view of a mirror 110 with an associated mounting technology element 210, without a foldable shield or with a foldable shield 100 in a resting position (not shown in Figure 10b).

圖10c以平面圖顯示了反射鏡的示意圖,其具有相關聯的安裝技術元件210,其中屏蔽100已樞轉進入至功能位置。安裝技術元件210幾乎完全由可移動屏蔽100覆蓋。可移動屏蔽100具有環形形狀且完全圍繞光學元件110延伸。因此,安裝技術元件210幾乎完全的熱屏蔽。Fig. 10c shows a schematic plan view of a mirror with an associated mounting technology element 210 in which the shield 100 has been pivoted into a functional position. The installation technology element 210 is almost completely covered by the movable shield 100. The movable shield 100 has a ring shape and extends completely around the optical element 110. Therefore, the mounting technology element 210 is almost completely thermally shielded.

圖11a顯示了用於EUV範圍的根據本發明的微影投射曝光裝置300的示意圖,其具有處於靜止位置的折疊式可移動屏蔽100。圖中顯示了包含場琢面反射鏡303和光瞳琢面反射鏡304的照明裝置。來自包含電漿光源301和集光器反射鏡302的光源單元的光被引導至場琢面反射鏡303上。在光瞳琢面反射鏡304下游的光束路徑中配置有第一望遠鏡反射鏡305和第二望遠鏡反射鏡306。掠入射反射鏡307配置於光束路徑下游,該掠入射反射鏡將入射在其上的輻射引導至包含六個反射鏡351-356的投射透鏡的物體平面中的物場上。在物場的位置處,承載反射結構的光罩321配置於光罩台320上,該光罩在投射透鏡的協助下成像到影像平面中,於其中塗佈有光敏感層(光阻)的基板361位於晶圓台360上。大致示意地顯示了力框架380(其基本上承載投射透鏡的反射鏡)以及感測器框架370(其基本上用作投射透鏡的反射鏡的位置的參考)。以示例的方式顯示了根據本發明的屏蔽100,該屏蔽藉由撓曲件102而可移動地安裝。此外,示意性地顯示了致動器122,其用於將可移動屏蔽100從靜止位置驅動到功能位置,然後再返回。因此,圖10a顯示了處於靜止位置的可移動屏蔽100。EUV光源301被打開。此處顯示了操作中的微影投射曝光裝置300。Fig. 11a shows a schematic diagram of a lithographic projection exposure apparatus 300 according to the present invention for EUV range, which has a folding movable shield 100 in a resting position. The figure shows an illumination device including a field facet mirror 303 and a pupil facet mirror 304. The light from the light source unit including the plasma light source 301 and the concentrator mirror 302 is guided to the field facet mirror 303. A first telescope mirror 305 and a second telescope mirror 306 are arranged in the beam path downstream of the pupil facet mirror 304. A grazing incidence mirror 307 is arranged downstream of the beam path, and the grazing incidence mirror guides the radiation incident thereon to the object field in the object plane of the projection lens containing six mirrors 351-356. At the position of the object field, the photomask 321 carrying the reflective structure is disposed on the photomask stage 320. The photomask is imaged into the image plane with the assistance of the projection lens, and is coated with a photosensitive layer (photoresist). The substrate 361 is located on the wafer stage 360. The force frame 380 (which basically carries the mirror of the projection lens) and the sensor frame 370 (which basically serves as a reference for the position of the mirror of the projection lens) are shown roughly schematically. The shield 100 according to the present invention is shown by way of example, which is movably mounted by means of the flexure 102. In addition, an actuator 122 is schematically shown, which is used to drive the movable shield 100 from the rest position to the functional position and then back. Therefore, Figure 10a shows the movable shield 100 in a resting position. The EUV light source 301 is turned on. The lithographic projection exposure apparatus 300 in operation is shown here.

圖11b顯示了用於EUV範圍的根據本發明的微影投射曝光裝置300的示意圖,其具有在功能位置中已折疊的可移動屏蔽100。屏蔽100在圖11b中僅示例性地屏蔽了僅一個反射鏡355。然而,待屏蔽反射鏡352至355中的多個或全部也可能分別由可移動屏蔽100所屏蔽。EUV光源301被關閉。微影投射曝光裝置300至少部分地開啟(圖11b中未示出)用於維護目的。Fig. 11b shows a schematic diagram of a lithographic projection exposure device 300 according to the present invention for EUV range with a movable shield 100 folded in a functional position. The shield 100 only exemplarily shields only one mirror 355 in FIG. 11b. However, some or all of the mirrors 352 to 355 to be shielded may also be shielded by the movable shield 100, respectively. The EUV light source 301 is turned off. The lithographic projection exposure device 300 is at least partially turned on (not shown in FIG. 11b) for maintenance purposes.

圖12a顯示了用於DUV範圍的根據本發明的微影投射曝光裝置400的示意圖,其具有在靜止位置的折疊式可移動屏蔽100。DUV投射曝光裝置400包含光束塑形和照明裝置402和投射透鏡404。在這種情況下,DUV代表「深紫外線」,並表示工作光的波長在30 nm至250 nm之間。Fig. 12a shows a schematic diagram of a lithographic projection exposure apparatus 400 according to the present invention for the DUV range, which has a foldable movable shield 100 in a resting position. The DUV projection exposure device 400 includes a beam shaping and lighting device 402 and a projection lens 404. In this case, DUV stands for "deep ultraviolet" and means that the wavelength of the working light is between 30 nm and 250 nm.

DUV投射曝光裝置400包含DUV光源406。作為示例,可提供發射例如在193 nm的DUV範圍內的輻射408的ArF準分子雷射作為DUV光源406。The DUV projection exposure device 400 includes a DUV light source 406. As an example, an ArF excimer laser emitting radiation 408 in the DUV range of 193 nm, for example, may be provided as the DUV light source 406.

圖12a所示的光束塑形和照明裝置402將DUV輻射408引導到光罩420上。光罩420被實現為透射光學元件,且可配置在光束塑形和照明裝置402和投射透鏡404的外部。光罩420具有通過投射透鏡404以縮小的方式成像在晶圓424或類似物上的結構。The beam shaping and lighting device 402 shown in FIG. 12a directs the DUV radiation 408 onto the mask 420. The photomask 420 is implemented as a transmissive optical element, and can be arranged outside the beam shaping and illuminating device 402 and the projection lens 404. The mask 420 has a structure in which an image is formed on the wafer 424 or the like in a reduced manner by a projection lens 404.

投射透鏡404具有複數個透鏡元件428、440及/或反射鏡430,用於將光罩420成像到晶圓424上。在這種情況下,投射透鏡404的個別透鏡元件428、440及/或反射鏡430可相對於投射透鏡404的光軸426對稱地配置。應注意,DUV投射曝光裝置400的透鏡元件和反射鏡的數量不限於所示的數量。也可提供更多或更少的透鏡元件及/或反射鏡。此外,反射鏡通常在其前側彎曲,以用於光束塑形。The projection lens 404 has a plurality of lens elements 428 and 440 and/or a mirror 430 for imaging the mask 420 onto the wafer 424. In this case, the individual lens elements 428, 440 and/or the mirror 430 of the projection lens 404 may be symmetrically arranged with respect to the optical axis 426 of the projection lens 404. It should be noted that the number of lens elements and mirrors of the DUV projection exposure device 400 is not limited to the number shown. More or fewer lens elements and/or mirrors can also be provided. In addition, the mirror is usually bent on its front side for beam shaping.

最後透鏡元件440和晶圓424之間的氣隙可由折射率>1的液體介質432代替。舉例來說,液體介質432可為高純度的水。這種構造也稱作浸沒式微影,並具有增加的微影解析度。Finally, the air gap between the lens element 440 and the wafer 424 can be replaced by a liquid medium 432 with a refractive index>1. For example, the liquid medium 432 may be high-purity water. This structure is also called immersion lithography and has an increased lithography resolution.

在圖12b中,顯示了處於功能位置(即處於折疊狀態)的根據本發明的可移動屏蔽100,且其對例如兩個反射鏡430的其中一者進行熱屏蔽。在此也示意性地顯示了撓曲件102和致動器122。所顯示的用於DUV範圍的微影投射曝光裝置400處於靜止狀態,亦即例如當其已至少部分地開啟已用於維護目的。In FIG. 12b, the movable shield 100 according to the present invention is shown in a functional position (ie in a folded state), and it thermally shields, for example, one of the two mirrors 430. The flexure 102 and the actuator 122 are also schematically shown here. The lithographic projection exposure device 400 shown for the DUV range is in a stationary state, that is, for example, when it has been at least partially turned on and has been used for maintenance purposes.

即使已經基於特定具體實施例描述了本發明,但是許多變化和替代具體實施例對於所屬技術領域中具有通常知識者將是顯而易見的,例如通過各個具體實施例的特徵的組合及/或交換。因此,毫無疑問地,對於所屬技術領域中具有通常知識者而言,本發明也包含這樣的變化和替代具體實施例,且本發明的範圍僅受限於所附專利請求項及其等均等的含義內。Even though the present invention has been described based on specific specific embodiments, many changes and alternative specific embodiments will be obvious to those skilled in the art, for example, through the combination and/or exchange of the features of each specific embodiment. Therefore, there is no doubt that for those with ordinary knowledge in the technical field, the present invention also includes such changes and alternative specific embodiments, and the scope of the present invention is only limited by the appended patent claims and their equivalents. Within the meaning.

100:可移動屏蔽 101:塗層 102:撓曲件 103:管路 104:溫度調節源 105:蓄熱器 106:紅外光 107:加熱線 108:空腔 109:流體 110:待熱絕緣構件 111:導軌 113:塗層 114:承載結構 119:溫度調節介質 122:致動器 130:定位方向 140:樞轉方向 210:待熱絕緣構件 300:微影投射曝光裝置 301:光源 302:集光器反射鏡 303:場琢面反射鏡 304:光瞳琢面反射鏡 305:望遠鏡反射鏡 306:望遠鏡反射鏡 307:掠入射反射鏡 320:光罩台 321:光罩 351:反射鏡 352:反射鏡 353:反射鏡 354:反射鏡 355:反射鏡 356:反射鏡 360:晶圓台 361:基板 370:感測器框架 380:力框架 400:微影投射曝光裝置 402:照明裝置 404:投射透鏡 406:光源 408:輻射 420:光罩 424:晶圓 426:光軸 428:透鏡元件 430:反射鏡 432:液體介質 440:透鏡元件100: removable shield 101: Coating 102: flexure 103: Pipeline 104: temperature regulation source 105: heat accumulator 106: infrared light 107: Heating wire 108: Cavity 109: Fluid 110: Insulating components to be heated 111: Rail 113: Coating 114: bearing structure 119: Temperature regulating medium 122: Actuator 130: positioning direction 140: pivot direction 210: Insulating components to be heated 300: Lithography projection exposure device 301: light source 302: Concentrator mirror 303: Field facet mirror 304: pupil facet mirror 305: telescope mirror 306: telescope mirror 307: grazing incidence mirror 320: mask table 321: Mask 351: Mirror 352: mirror 353: Mirror 354: Mirror 355: mirror 356: Mirror 360: Wafer table 361: Substrate 370: sensor frame 380: Force Frame 400: Lithography projection exposure device 402: Lighting Device 404: Projection lens 406: Light Source 408: Radiation 420: Mask 424: Wafer 426: optical axis 428: lens element 430: mirror 432: Liquid medium 440: lens element

下文參照附圖更詳細地解釋了各種示例性具體實施例。圖式以及圖式中所顯示的元件彼此之間的相對尺寸不應視為按比例繪製。相反地,可使用誇大的尺寸或減小的尺寸來顯示個別元件,以進行更好的說明並有更佳的理解。Various exemplary embodiments are explained in more detail below with reference to the accompanying drawings. The drawings and the relative sizes of the elements shown in the drawings should not be regarded as drawn to scale. Conversely, an exaggerated size or a reduced size can be used to display individual elements for better description and better understanding.

圖1a顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,具有在靜止位置的可滑動屏蔽;Figure 1a shows a schematic diagram of an excerpt of the lithographic projection exposure device according to the present invention, with a slidable shield in a rest position;

圖1b顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,具有在功能位置的可滑動屏蔽;Figure 1b shows a schematic diagram of an excerpt of the lithographic projection exposure device according to the present invention, with a slidable shield in a functional position;

圖2a顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,具有在靜止位置的可折疊屏蔽;Figure 2a shows a schematic diagram of an excerpt of the lithographic projection exposure device according to the present invention, with a foldable shield in a rest position;

圖2b顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,具有在功能位置的可折疊屏蔽;Figure 2b shows a schematic diagram of an excerpt of the lithographic projection exposure device according to the present invention, with a foldable shield in a functional position;

圖3顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,具有已滑入的屏蔽以及附加的溫度調節源;Figure 3 shows a schematic diagram of an excerpt of the lithographic projection exposure device according to the present invention, with a slid-in shield and an additional temperature adjustment source;

圖4、5、6、7、8、9分別顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有在功能位置的已滑入的屏蔽;Figures 4, 5, 6, 7, 8, and 9 respectively show schematic diagrams of excerpts of the lithographic projection exposure device according to the present invention, which has a slid-in shield in a functional position;

圖10a以截面圖顯示了根據本發明的微影投射曝光裝置的摘錄的示意圖,其具有在功能位置的已折疊的屏蔽;Figure 10a shows a schematic cross-sectional view of an excerpt of the lithographic projection exposure device according to the present invention, which has a folded shield in a functional position;

圖10b以平面圖顯示了反射鏡的示意圖,其具有相關聯的安裝技術元件,而不具有折疊式的可移動屏蔽;Figure 10b shows a schematic plan view of the reflector, which has associated mounting technical elements, but does not have a foldable movable shield;

圖10c以平面圖示出了反射鏡的示意圖,其具有相關的安裝技術元件,並具有已在功能位置的已折疊的屏蔽;Figure 10c shows a schematic plan view of the reflector, which has related technical elements for mounting, and has a folded shield already in a functional position;

圖11a顯示了根據本發明的用於EUV範圍的微影投射曝光裝置的示意圖,其具有在靜止位置的可折疊屏蔽;Figure 11a shows a schematic diagram of a lithographic projection exposure device for EUV range according to the present invention, which has a foldable shield in a rest position;

圖11b顯示了根據本發明的用於EUV範圍的微影投射曝光裝置的示意圖,其具有在功能位置的可折疊屏蔽;Figure 11b shows a schematic diagram of a lithographic projection exposure device for EUV range according to the present invention, which has a foldable shield in a functional position;

圖12a顯示了根據本發明的用於DUV範圍的微影投射曝光裝置的示意圖,其具有在靜止位置的可折疊屏蔽;以及Figure 12a shows a schematic diagram of a lithographic projection exposure device for the DUV range according to the present invention, which has a foldable shield in a rest position; and

圖12b顯示了根據本發明的用於DUV範圍的微影投射曝光裝置的示意圖,其具有在功能位置的已折疊屏蔽。Figure 12b shows a schematic diagram of a lithographic projection exposure apparatus for the DUV range according to the present invention, which has a folded shield in a functional position.

100:可移動屏蔽 100: removable shield

110:待熱絕緣構件 110: Insulating components to be heated

111:導軌 111: Rail

114:承載結構 114: bearing structure

122:致動器 122: Actuator

210:待熱絕緣構件 210: Insulating components to be heated

Claims (15)

一種微影投射曝光裝置,特別是用於DUV範圍或EUV範圍,包含至少一可移動屏蔽和待熱絕緣的至少一構件,其中在該微影投射曝光裝置的一操作暫停中,例如在維護的情況下,該至少一可移動屏蔽係組態以延長該待熱絕緣的至少一構件的溫度接近環境溫度的持續時間。A lithographic projection exposure device, especially used in the DUV range or EUV range, includes at least one movable shield and at least one member to be thermally insulated, wherein during an operation pause of the lithographic projection exposure device, for example, during maintenance In this case, the at least one movable shield is configured to extend the duration of the temperature of the at least one component to be thermally insulated close to the ambient temperature. 如請求項1所述之微影投射曝光裝置,其中待熱絕緣的該構件包含至少一反射鏡,該反射鏡特別是設計用於反射來自EUV範圍的電磁輻射。The lithographic projection exposure device according to claim 1, wherein the member to be thermally insulated includes at least one reflector, and the reflector is especially designed to reflect electromagnetic radiation from the EUV range. 如請求項1或2所述之微影投射曝光裝置,其中待熱絕緣的該構件包含至少一安裝技術元件。The lithographic projection exposure device according to claim 1 or 2, wherein the component to be thermally insulated includes at least one mounting technology element. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽的材料包含至少一熱絕緣體,較佳為:-       PTFE;-       POM;以及-       矽酸鹽陶瓷The lithography projection exposure device according to any one of the foregoing claims, wherein the movable shielding material includes at least one thermal insulator, preferably:-PTFE;-POM; and-silicate ceramic 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽在其面對待熱絕緣的該構件的一側上設有至少一塗層,該塗層至少部分地反射紅外光範圍內的電磁輻射。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield is provided with at least one coating on the side facing the member to be thermally insulated, and the coating is at least partially reflective Electromagnetic radiation in the infrared range. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽在其背離待熱絕緣的該構件的一側上設有至少一塗層,該塗層至少部分地反射紅外光範圍內的電磁輻射。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield is provided with at least one coating on its side facing away from the member to be thermally insulated, and the coating is at least partially reflective Electromagnetic radiation in the infrared range. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽在該微影投射曝光裝置的該操作暫停中至少局部地及/或至少有時地包圍待熱絕緣的該構件。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield at least partially and/or at least sometimes surrounds the thermally insulated object during the operation pause of the lithographic projection exposure device The component. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中在該微影投射曝光裝置的該操作暫停中,該可移動屏蔽與待熱絕緣的該構件分開介於1 mm至20 mm之間的一距離,較佳介於2 mm至5 mm之間的一距離。The lithographic projection exposure apparatus according to any one of the preceding claims, wherein during the suspension of the operation of the lithographic projection exposure apparatus, the movable shield is separated from the member to be thermally insulated by between 1 mm and 20 A distance between mm, preferably a distance between 2 mm and 5 mm. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽具有至少一空腔,其以一流體填充,較佳以空氣填充。The lithography projection exposure device according to any one of the preceding claims, wherein the movable shield has at least one cavity, which is filled with a fluid, preferably with air. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽為可調節溫度的,較佳為通過以下至少一種措施:-       與一蓄熱器接觸;-       溫度調節介質在該可移動屏蔽的體積中流動;-       溫度調節介質在管路中流動,其特別是焊接在該可移動屏蔽的表面上;以及-       藉由在該可移動屏蔽中及/或該可移動屏蔽上的電阻線進行電加熱。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield is temperature-adjustable, preferably by at least one of the following measures:-contact with a heat accumulator;-temperature adjustment medium Flow in the volume of the movable shield;-the temperature adjustment medium flows in the pipeline, especially welded on the surface of the movable shield; and-by in the movable shield and/or on the movable shield The resistance wire is electrically heated. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中在該微影投射曝光裝置的該操作暫停中,特別是在該操作暫停的一開始,該可移動屏蔽可特別地藉由至少一致動器,在待熱絕緣的該構件的方向上從一靜止位置滑動及/或折疊至一功能位置。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield can be specially used during the suspension of the operation of the lithographic projection exposure device, especially at the beginning of the suspension of the operation At least the actuator is slid and/or folded from a rest position to a functional position in the direction of the component to be thermally insulated. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽包含至少一撓曲部,特別為一旋轉接頭及/或一腿彈簧。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield includes at least one flexure, especially a rotary joint and/or a leg spring. 如前述請求項的其中任一項所述之微影投射曝光裝置,其中該可移動屏蔽包含配置在一光學使用區域之外的至少一引導件,其形式例如為至少一導軌。The lithographic projection exposure device according to any one of the preceding claims, wherein the movable shield includes at least one guide member arranged outside an optical use area, in the form of at least one guide rail, for example. 如前述請求項的其中任一項所述之微影投射曝光裝置,包含至少一溫度調節源,特別是至少一個紅外光輻射器,其中該溫度調節源係調節該可移動屏蔽和待熱絕緣的該構件之間區域的溫度。The lithographic projection exposure device according to any one of the preceding claims, comprising at least one temperature adjustment source, in particular at least one infrared light radiator, wherein the temperature adjustment source adjusts the movable shield and the thermally insulated The temperature of the area between the components. 一種用以熱絕緣一微影投射曝光裝置的至少一構件的方法,包含至少以下步驟:-       在該微影投射曝光裝置的一操作暫停中關閉或遮蔽至少一光源;-       將至少一可移動屏蔽從一靜止位置移動到一功能位置,使得在該功能位置中,待熱絕緣的該構件至少局部地由該可移動屏蔽包圍。A method for thermally insulating at least one component of a lithographic projection exposure device, including at least the following steps:-turning off or shielding at least one light source during an operation pause of the lithographic projection exposure device;-turning off at least one movable shield Moving from a rest position to a functional position, so that in the functional position, the component to be thermally insulated is at least partially surrounded by the movable shield.
TW109134513A 2019-10-07 2020-10-06 Device and method for shielding components to be thermally insulated in microlithographic projection exposure apparatuses TW202127145A (en)

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