TW202124262A - Boron nitride particles and resin composition - Google Patents

Boron nitride particles and resin composition Download PDF

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TW202124262A
TW202124262A TW109140624A TW109140624A TW202124262A TW 202124262 A TW202124262 A TW 202124262A TW 109140624 A TW109140624 A TW 109140624A TW 109140624 A TW109140624 A TW 109140624A TW 202124262 A TW202124262 A TW 202124262A
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boron nitride
nitride particles
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佐佐木祐輔
宮田建治
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日商電化股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C01B21/0646Preparation by pyrolysis of boron and nitrogen containing compounds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L101/00Compositions of unspecified macromolecular compounds

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Abstract

One aspect of the present invention provides boron nitride particles having a BET diameter of at least 160 nm but not more than 300 nm, and having a total oxygen content of at least 0.4% by mass but not more than 0.8% by mass.

Description

氮化硼粒子及樹脂組成物Boron nitride particles and resin composition

本發明關於氮化硼粒子及樹脂組成物。The present invention relates to boron nitride particles and resin compositions.

在電晶體、閘流體、及CPU等電子零件中,有效地將在使用期間產生的熱予以散熱係成為重要的問題。因此,會將具有高熱傳導性的散熱構件與此種電子零件一起使用。另一方面,因為氮化硼粒子具有高熱傳導性及高絕緣性,所以被廣泛地利用作為散熱構件中之填充材。In electronic parts such as transistors, thyristors, and CPUs, it is an important issue to effectively dissipate heat generated during use. Therefore, a heat dissipation member with high thermal conductivity will be used together with such electronic parts. On the other hand, because boron nitride particles have high thermal conductivity and high insulation, they are widely used as fillers in heat dissipation members.

例如專利文獻1就展現高熱傳導性且對於在功率半導體裝置等中係為必要的放熱片材而言係非常有用的氮化硼凝聚粒子組成物,揭示一種氮化硼凝聚粒子組成物,係平均粒徑(D50 )為1μm~200μm之氮化硼凝聚粒子之組成物,其特徵為滿足預定的條件。 [先前技術文獻] [專利文獻]For example, Patent Document 1 shows a boron nitride agglomerated particle composition that exhibits high thermal conductivity and is very useful for exothermic sheets necessary for power semiconductor devices, etc., and discloses a boron nitride agglomerated particle composition. The composition of boron nitride aggregate particles with a particle size (D 50 ) of 1 μm to 200 μm is characterized by satisfying predetermined conditions. [Prior Technical Documents] [Patent Documents]

[專利文獻1]日本特開2017-036190號公報[Patent Document 1] JP 2017-036190 A

[發明所欲解決之課題][The problem to be solved by the invention]

近年,在搭載有電子零件的裝置中,訊號之高速傳送化、大容量化已有進展,所以對散熱構件亦要求對上述需求有所貢獻之特性。具體而言,期待低介電率且低介電正切的散熱構件。In recent years, in devices equipped with electronic components, high-speed signal transmission and large-capacity have progressed. Therefore, heat dissipation components are also required to have characteristics that contribute to the above-mentioned needs. Specifically, a heat dissipation member with a low dielectric constant and low dielectric tangent is expected.

因此,本發明之目的為提供可實現低介電率且低介電正切之散熱構件的氮化硼粒子。 [解決課題之手段]Therefore, the object of the present invention is to provide boron nitride particles that can realize a heat dissipation member with low dielectric constant and low dielectric tangent. [Means to solve the problem]

本發明其中一態樣為一種氮化硼粒子,BET徑為160nm以上且300nm以下,全氧量為0.4質量%以上且0.8質量%以下。One aspect of the present invention is a boron nitride particle having a BET diameter of 160 nm or more and 300 nm or less, and a total oxygen content of 0.4% by mass or more and 0.8% by mass or less.

氮化硼粒子之平均圓形度可為0.8以上。氮化硼粒子之平均粒徑可為1μm以下。The average circularity of the boron nitride particles may be 0.8 or more. The average particle size of the boron nitride particles may be 1 μm or less.

本發明之其它態樣為一種樹脂組成物,含有樹脂及上述氮化硼粒子。 [發明之效果]Another aspect of the present invention is a resin composition containing resin and the above-mentioned boron nitride particles. [Effects of Invention]

根據本發明,可提供能實現低介電率且低介電正切之散熱構件的氮化硼粒子。According to the present invention, it is possible to provide boron nitride particles capable of realizing a heat dissipation member with low dielectric constant and low dielectric tangent.

本發明之一實施形態為一種氮化硼粒子,具有特定的BET徑及全氧量。One embodiment of the present invention is a boron nitride particle having a specific BET diameter and total oxygen content.

考量使包含氮化硼粒子之散熱構件(以下,亦簡單稱作「散熱構件」)的介電率及介電正切為低的觀點,氮化硼粒子之BET徑為160nm以上,宜為170nm以上,亦可為180nm以上,或190nm以上。考量使散熱構件的介電率及介電正切為低的觀點,氮化硼粒子之BET徑為300nm以下,宜為290nm以下,亦可為280nm以下,270nm以下,或260nm以下。Considering the viewpoint that the dielectric constant and dielectric tangent of the heat dissipation member containing boron nitride particles (hereinafter, also simply referred to as "heat dissipation member") is low, the BET diameter of the boron nitride particles is 160nm or more, preferably 170nm or more It can also be 180nm or more, or 190nm or more. Considering the viewpoint that the dielectric constant and the dielectric tangent of the heat dissipation member are low, the BET diameter of the boron nitride particles is 300 nm or less, preferably 290 nm or less, or may be 280 nm or less, 270 nm or less, or 260 nm or less.

氮化硼粒子之BET徑,係根據下式所算出之數值。 BET徑=假設1g之氮化硼為真球之1粒子時的直徑/(BET比表面積/假設1g之氮化硼為真球之1粒子時的表面積) 在此, ・假設1g之氮化硼為真球之1粒子時的直徑 =(6/(氮化硼粒子之密度×π))1/3 (惟,使用2.26g/cm3 作為氮化硼粒子之密度) ・假設1g之氮化硼為真球之1粒子時的表面積 =π×(假設1g之氮化硼為真球之1粒子時的直徑)2 ・BET比表面積 依循JIS Z 8803:2013並使用氮氣藉由BET一點法所測定之氮化硼粒子的BET比表面積。The BET diameter of the boron nitride particles is a value calculated according to the following formula. BET diameter = the diameter when 1g of boron nitride is one particle of a real ball/(BET specific surface area/the surface area when 1g of boron nitride is assumed to be one particle of a real ball) Here, ・assume 1g of boron nitride Diameter when it is 1 particle of a real sphere = (6/(density of boron nitride particles×π)) 1/3 (However, 2.26g/cm 3 is used as the density of boron nitride particles) ・Assuming 1g of nitride The surface area when boron is 1 particle of a real sphere=π×(Assuming that 1g of boron nitride is the diameter of 1 particle of a real sphere) 2 ・BET specific surface area complies with JIS Z 8803:2013 and uses nitrogen as determined by the BET one-point method The measured BET specific surface area of the boron nitride particles.

考量使散熱構件的介電率及介電正切為低的觀點,氮化硼粒子之全氧量為0.4質量%以上,宜為0.45質量%以上,亦可為0.5質量%以上,0.55質量%以上,或0.6質量%以上。考量使散熱構件的介電率及介電正切為低的觀點,氮化硼粒子之全氧量為0.8質量%以下,宜為0.75質量%以下,或亦可為0.7質量%以下。氮化硼粒子之全氧量,係氮化硼粒子中之氧的質量比例,係使用氧氮分析裝置(例如堀場製作所(股)公司製,商品名:EMGA-620W/C)所測定之數值。Considering the viewpoint that the dielectric rate and dielectric tangent of the heat dissipation member are low, the total oxygen content of the boron nitride particles is 0.4% by mass or more, preferably 0.45% by mass or more, or 0.5% by mass or more, 0.55% by mass or more , Or more than 0.6% by mass. Considering the viewpoint that the dielectric constant and the dielectric tangent of the heat dissipation member are low, the total oxygen content of the boron nitride particles is 0.8% by mass or less, preferably 0.75% by mass or less, or may be 0.7% by mass or less. The total oxygen content of boron nitride particles is the mass ratio of oxygen in the boron nitride particles. It is a value measured using an oxygen-nitrogen analyzer (for example, manufactured by Horiba Manufacturing Co., Ltd., trade name: EMGA-620W/C) .

考量使製作散熱構件時之氮化硼粒子的填充性更好,並使散熱構件的特性(熱傳導性、介電率等)係各向同性的觀點,氮化硼粒子具有球狀、或接近球狀的形狀較為理想。考量同樣的觀點,氮化硼粒子之平均圓形度,宜為0.8以上,0.82以上,0.84以上,0.86以上,或可為0.88以上。Considering that the filling of the boron nitride particles when fabricating the heat dissipating member is better, and the properties of the heat dissipating member (thermal conductivity, dielectric rate, etc.) are isotropic, the boron nitride particles have a spherical shape or close to a spherical shape. The shape of the shape is ideal. Considering the same point of view, the average circularity of the boron nitride particles is preferably 0.8 or more, 0.82 or more, 0.84 or more, 0.86 or more, or may be 0.88 or more.

氮化硼粒子之平均圓形度係經以下程序進行測定。 針對使用掃描式電子顯微鏡(SEM)進行攝影所得之氮化硼粒子的圖像(倍率:10,000倍、圖像解像度:1280×1024像素),藉由使用圖像分析軟體(例如Mountech公司製、商品名:MacView)之圖像分析,算出氮化硼粒子的投影面積(S)及周長(L)。使用投影面積(S)及周長(L),依循下式: 圓形度=4πS/L2 來求得圓形度。將針對任意選擇之100個氮化硼粒子所求得之圓形度的平均值定義為平均圓形度。The average circularity of the boron nitride particles is determined by the following procedure. For the image of boron nitride particles (magnification: 10,000 times, image resolution: 1280×1024 pixels) taken by using a scanning electron microscope (SEM), by using image analysis software (for example, manufactured by Mountech Corporation, product Name: MacView) image analysis to calculate the projected area (S) and perimeter (L) of the boron nitride particles. Using the projected area (S) and perimeter (L), follow the formula: circularity = 4πS/L 2 to find the circularity. The average circularity obtained for 100 boron nitride particles selected arbitrarily is defined as the average circularity.

考量可抑制將氮化硼粒子與樹脂進行混合時的黏度增加的觀點,氮化硼粒子之平均粒徑,宜為0.01μm以上,可為0.05μm以上,0.1μm以上,0.2μm以上,0.3μm以上,或0.4μm以上。考量使散熱構件之絕緣破壞特性更好的觀點,氮化硼粒子之平均粒徑為1μm以下、或可為0.9μm以下、0.8μm以下、0.7μm以下。In consideration of the viewpoint that the viscosity increase when the boron nitride particles are mixed with the resin can be suppressed, the average particle size of the boron nitride particles is preferably 0.01 μm or more, and can be 0.05 μm or more, 0.1 μm or more, 0.2 μm or more, 0.3 μm Above, or above 0.4μm. From the viewpoint of improving the insulation failure characteristics of the heat dissipation member, the average particle size of the boron nitride particles is 1 μm or less, or may be 0.9 μm or less, 0.8 μm or less, or 0.7 μm or less.

氮化硼粒子之平均粒徑,係藉由以下程序進行測定。 使用蒸餾水作為使氮化硼粒子分散的分散媒,並使用六偏磷酸鈉作為分散劑,製備0.125質量%之六偏磷酸鈉水溶液。在該水溶液中以0.1g/80mL之比例添加氮化硼粒子,利用超音波均質機(例如日本精機製作所製、商品名:US-300E),在AMPLITUDE(振幅)80%的條件下進行1次1分30秒之超音波分散,藉此製備氮化硼粒子之分散液。一邊將此分散液以60rpm之條件進行攪拌一邊進行分離取樣,藉由雷射繞射散射法粒度分布測定裝置(例如貝克曼庫爾特公司製、商品名:LS-13 320)測定體積基準之粒度分布。此時,使用1.33作為水的折射率,並使用1.7作為氮化硼粒子的折射率。從測定結果,就累積粒度分布之累積值50%的粒徑(中值粒徑、d50)算出平均粒徑。The average particle size of the boron nitride particles is measured by the following procedure. Distilled water was used as a dispersion medium for dispersing boron nitride particles, and sodium hexametaphosphate was used as a dispersant to prepare a 0.125% by mass sodium hexametaphosphate aqueous solution. Add boron nitride particles to the aqueous solution at a ratio of 0.1g/80mL, and use an ultrasonic homogenizer (for example, manufactured by Nippon Seiki Seisakusho, trade name: US-300E), and perform once under the condition of AMPLITUDE (amplitude) 80% Ultrasonic dispersion for 1 minute and 30 seconds to prepare a dispersion of boron nitride particles. Separate and sample the dispersion while stirring at 60 rpm, and measure the volume standard with a laser diffraction scattering method particle size distribution measuring device (for example, Beckman Coulter, trade name: LS-13 320). Particle size distribution. At this time, 1.33 was used as the refractive index of water, and 1.7 was used as the refractive index of the boron nitride particles. From the measurement results, the average particle diameter is calculated on the particle diameter (median particle diameter, d50) of 50% of the cumulative value of the cumulative particle size distribution.

以上說明之氮化硼粒子,係藉由具備下列步驟之製造方法所獲得:第1步驟,使硼酸酯與氨在750~1400℃之條件下進行反應而獲得第1前驅體;第2步驟,將第1前驅體在1000~1600℃之條件下進行加熱而獲得第2前驅體;第3步驟,將第2前驅體在1000~1600℃之條件下進行加熱而獲得第3前驅體;第4步驟,將第3前驅體在1800~2200℃之條件下進行加熱而獲得第4前驅體。The boron nitride particles described above are obtained by a manufacturing method with the following steps: the first step is to react borate and ammonia at 750 to 1400°C to obtain the first precursor; and the second step , The first precursor is heated at 1000-1600°C to obtain the second precursor; the third step is to heat the second precursor at 1000-1600°C to obtain the third precursor; In 4 steps, the third precursor is heated at 1800-2200°C to obtain the fourth precursor.

又,在此製造方法中,於第2步驟結束後且第3步驟開始前,暫時將放置第2前驅體之環境溫度下降至常溫(10~30℃)為止。以此方式,藉由在1000~1600℃之加熱後,返回常溫,並再度以1000~1600℃進行加熱,可獲得具有上述特性之氮化硼粒子。另一方面,就習知的製造方法而言,例如具備上述第1步驟、第2步驟、及第4步驟之製造方法雖為已知,但本實施形態之製造方法中,如上述,除了第2步驟以外更實施第3步驟,且在第2步驟與第3步驟之間暫時將環境溫度下降至常溫,藉此可獲得具有一直以來所沒有的特性的氮化硼粒子。Furthermore, in this manufacturing method, after the second step is completed and before the third step is started, the temperature of the environment in which the second precursor is placed is temporarily lowered to room temperature (10-30°C). In this way, by heating at 1000 to 1600°C, returning to normal temperature, and heating again at 1000 to 1600°C, boron nitride particles having the above-mentioned characteristics can be obtained. On the other hand, in the conventional manufacturing method, for example, the manufacturing method including the above-mentioned first step, second step, and fourth step is known. However, in the manufacturing method of this embodiment, as described above, except for the first step In addition to the second step, the third step is performed, and the ambient temperature is temporarily lowered to normal temperature between the second step and the third step, thereby obtaining boron nitride particles having characteristics that have not been available until now.

第1步驟中,例如將設置於電阻加熱爐內之反應管(例如石英管)進行加熱,昇溫直至750~1500℃。另一方面,使鈍性氣體通過液狀之硼酸酯後導入反應管中,藉此將硼酸酯導入反應管中。另一方面,將氨氣直接導入反應管中。就鈍性氣體而言,可列舉如氦氣、氖氣、氬氣等稀有氣體,以及氮氣。硼酸酯,例如可為烷基硼酸酯,為硼酸三甲酯較為理想。In the first step, for example, a reaction tube (for example, a quartz tube) installed in a resistance heating furnace is heated, and the temperature is increased to 750 to 1500°C. On the other hand, the passive gas is passed through the liquid borate and then introduced into the reaction tube, thereby introducing the borate into the reaction tube. On the other hand, the ammonia gas is directly introduced into the reaction tube. As for the passive gas, rare gases such as helium, neon, and argon, and nitrogen can be cited. The borate may be, for example, an alkyl borate, preferably trimethyl borate.

氨之導入量相對於硼酸酯之導入量的莫耳比(氨/硼酸酯),例如可為1以上,可為10以下。The molar ratio of the introduction amount of ammonia to the introduction amount of borate (ammonia/borate) may be, for example, 1 or more and 10 or less.

導入之硼酸酯及氨,在加熱後之反應管內進行反應,生成第1前驅體(白色粉末)。雖然生成之第1前驅體的一部分會附著在反應管內,但多數的第1前驅體會藉由鈍性氣體、未反應之氨氣而被送往安裝在反應管前端的回收容器中進行回收。使硼酸酯與氨進行反應之時間(反應時間)為30秒以內較為理想。反應時間,係硼酸酯及氨滯留在反應管內被加熱至750~1400℃的部分(加熱部分)中的時間,可藉由將硼酸酯及氨導入時的氣體流量、及設置於電阻加熱爐內之反應管的長度(反應管之加熱部分的長度)進行調整。The introduced borate and ammonia react in the heated reaction tube to produce the first precursor (white powder). Although a part of the first precursor produced will adhere to the reaction tube, most of the first precursor will be sent to the recovery container installed at the front end of the reaction tube by inactive gas or unreacted ammonia gas for recovery. The time (reaction time) for reacting the borate and ammonia is preferably within 30 seconds. The reaction time is the time that borate and ammonia stay in the part (heating part) heated to 750 to 1400°C in the reaction tube. It can be determined by the gas flow rate when the borate and ammonia are introduced and the resistance set in it. The length of the reaction tube in the heating furnace (the length of the heating part of the reaction tube) is adjusted.

第2步驟中,將在第1步驟獲得之第1前驅體裝入設置於電阻加熱爐內之其它反應管(例如氧化鋁管)中,並分別將氮氣及氨氣導入反應管內。此時導入之氣體亦可僅有氨氣。氮氣及氨氣之流量,各自以能使反應時間成為所期望之數值的方式而適當地進行調整即可。例如,氨氣之流量越多,反應時間就越短,其結果,會有最終獲得之氮化硼粒子的BET徑變小的傾向,及全氧量變小的傾向。In the second step, the first precursor obtained in the first step is charged into another reaction tube (for example, an alumina tube) installed in a resistance heating furnace, and nitrogen and ammonia gas are respectively introduced into the reaction tube. The gas introduced at this time can also be only ammonia gas. The flow rate of nitrogen gas and ammonia gas may be adjusted appropriately so that the reaction time can be a desired value. For example, the larger the flow rate of ammonia gas, the shorter the reaction time. As a result, the BET diameter of the boron nitride particles finally obtained tends to decrease, and the total oxygen content tends to decrease.

然後,將反應管加熱至1000~1600℃。加熱時間,例如可為1小時以上,可為10小時以下。藉此,可獲得第2前驅體。Then, the reaction tube is heated to 1000 to 1600°C. The heating time may be, for example, 1 hour or more, and may be 10 hours or less. In this way, the second precursor can be obtained.

第2步驟結束後,切斷電阻加熱爐之電源,停止氮氣及氨氣之導入,並在反應管內之溫度已下降至常溫(10~30℃)後的狀態下,將第2前驅體予以靜置,靜置時間,例如可為0.5小時以上,可為96小時以下。After the second step, cut off the power of the resistance heating furnace, stop the introduction of nitrogen and ammonia, and after the temperature in the reaction tube has dropped to room temperature (10~30℃), remove the second precursor It is allowed to stand, and the standing time may be, for example, 0.5 hours or more, or 96 hours or less.

第3步驟中,將氮氣及氨氣再次導入反應管內,並且再次將反應管加熱至1000~1600℃。氮氣及氨氣之流量、以及加熱時間之例,可與在第2步驟中說明者相同。第2步驟之條件與第3步驟之條件,可彼此相同,亦可彼此相異。藉此,可獲得第3前驅體。In the third step, nitrogen and ammonia are introduced into the reaction tube again, and the reaction tube is heated to 1000 to 1600°C again. Examples of the flow rates of nitrogen and ammonia and the heating time can be the same as those described in the second step. The conditions of the second step and the third step may be the same or different from each other. In this way, a third precursor can be obtained.

第4步驟中,將在第3步驟獲得之第3前驅體裝入氮化硼製坩堝中,並於感應加熱爐中,在氮氣環境下加熱至1800~2200℃。加熱時間,例如可為0.5小時以上,10小時以下。藉此,可獲得具有上述特性之氮化硼粒子。In the fourth step, the third precursor obtained in the third step is put into a boron nitride crucible and heated to 1800-2200°C in a nitrogen atmosphere in an induction heating furnace. The heating time can be, for example, 0.5 hours or more and 10 hours or less. Thereby, boron nitride particles having the above-mentioned characteristics can be obtained.

以上說明之氮化硼粒子,例如可理想地使用於散熱構件。藉由使用上述氮化硼粒子,可獲得低介電率且低介電正切之散熱構件。氮化硼粒子,在使用於散熱構件的情況下,例如能以與樹脂混合所成之樹脂組成物的形式而使用。亦即,本發明其它一實施形態,為一種樹脂組成物,含有樹脂與上述氮化硼粒子。The boron nitride particles described above can be ideally used for heat dissipation members, for example. By using the above-mentioned boron nitride particles, a heat dissipation member with low dielectric constant and low dielectric tangent can be obtained. When the boron nitride particles are used in a heat dissipation member, for example, they can be used in the form of a resin composition formed by mixing with resin. That is, another embodiment of the present invention is a resin composition containing a resin and the above-mentioned boron nitride particles.

考量使樹脂組成物之熱傳導率更好,並能輕易獲得優異的散熱性能的觀點,上述氮化硼粒子之含量,以樹脂組成物之整體體積為基準係30體積%以上較為理想,40體積%以上更為理想,50體積%以上更甚理想,考量能抑制成形時空隙之產生、以及能抑制絕緣性及機械強度之降低的觀點,係85體積%以下較為理想,80體積%以下更為理想,70體積%以下更甚理想。Considering that the thermal conductivity of the resin composition is better, and excellent heat dissipation performance can be easily obtained, the content of the above-mentioned boron nitride particles is preferably 30% by volume or more based on the total volume of the resin composition, 40% by volume The above is more ideal, and 50% by volume or more is even more desirable. Considering that it can suppress the generation of voids during molding, and can suppress the reduction of insulation and mechanical strength, it is ideal that 85% by volume or less, and 80% by volume or less is more ideal. , 70% by volume or less is more ideal.

就樹脂而言,可列舉如環氧樹脂、聚矽氧樹脂、聚矽氧橡膠、丙烯酸系樹脂、酚醛樹脂、三聚氰胺樹脂、尿素樹脂、不飽和聚酯、氟樹脂、聚烯烴(聚乙烯等)、聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺、聚對苯二甲酸丁二酯、聚對苯二甲酸乙二酯、聚苯醚、聚苯硫醚、全芳香族聚酯、聚碸、液晶聚合物、聚醚碸、聚碳酸酯、馬來醯亞胺改性樹脂、ABS(丙烯腈-丁二烯-苯乙烯)樹脂、AAS(丙烯腈-丙烯酸橡膠・苯乙烯)樹脂、及AES(丙烯腈・乙烯・丙烯・二烯橡膠-苯乙烯)樹脂。As for the resin, for example, epoxy resin, silicone resin, silicone rubber, acrylic resin, phenol resin, melamine resin, urea resin, unsaturated polyester, fluororesin, polyolefin (polyethylene, etc.) , Polyimide, polyimide imine, polyether imide, polybutylene terephthalate, polyethylene terephthalate, polyphenylene ether, polyphenylene sulfide, fully aromatic poly Ester, poly, liquid crystal polymer, polyether, polycarbonate, maleimide modified resin, ABS (acrylonitrile-butadiene-styrene) resin, AAS (acrylonitrile-acrylic rubber, styrene) ) Resin, and AES (acrylonitrile, ethylene, propylene, diene rubber-styrene) resin.

樹脂之含量,以樹脂組成物之整體體積為基準係15體積%以上,20體積%以上,或可為30體積%以上,70體積%以下,60體積%以下,或可為50體積%以下。The content of the resin is 15 vol% or more, 20 vol% or more, or 30 vol% or more, 70 vol% or less, 60 vol% or less, or 50 vol% or less based on the total volume of the resin composition.

樹脂組成物,可更含有使樹脂硬化之硬化劑。硬化劑,可根據樹脂之種類作適當地選擇。例如樹脂係環氧樹脂的情況,就硬化劑而言,可列舉如苯酚酚醛清漆化合物、酸酐、胺基化合物、及咪唑化合物。硬化劑之含量,相對於樹脂100質量份,例如可為0.5質量份以上或1.0質量份以上,可為15質量份以下或10質量份以下。The resin composition may further contain a hardener to harden the resin. The hardener can be appropriately selected according to the type of resin. For example, in the case of a resin-based epoxy resin, the curing agent includes, for example, phenol novolac compounds, acid anhydrides, amino compounds, and imidazole compounds. The content of the hardener relative to 100 parts by mass of the resin may be, for example, 0.5 parts by mass or more or 1.0 parts by mass or more, and may be 15 parts by mass or less or 10 parts by mass or less.

樹脂組成物,亦可更含有上述氮化硼粒子以外之氮化硼粒子(例如,鱗片狀之一次粒子凝聚而成之塊狀氮化硼粒子等公知的氮化硼粒子)。 [實施例]The resin composition may further contain boron nitride particles other than the above-mentioned boron nitride particles (for example, well-known boron nitride particles such as bulk boron nitride particles formed by agglomeration of scaly primary particles). [Example]

以下,藉由實施例對本發明進行更具體的說明。但本發明並不受下列實施例所限定。Hereinafter, the present invention will be described in more detail with examples. However, the present invention is not limited by the following examples.

[實施例1~3] 藉由以下程序,製作氮化硼粒子。 首先,在第1步驟中,加熱設置於電阻加熱爐內之反應管(石英管),昇溫直至表1所示之溫度。另一方面,使氮氣通過硼酸三甲酯後導入反應管中,藉此將硼酸三甲酯導入反應管中。另一方面,將氨氣直接導入反應管中。氨之導入量相對於硼酸三甲酯之導入量的莫耳比(氨/硼酸三甲酯)係設定為4.5。藉此,使硼酸三甲酯與氨進行反應,獲得第1前驅體(白色粉末)。另外,反應時間係如表1所示。[Examples 1 to 3] By the following procedure, boron nitride particles are produced. First, in the first step, the reaction tube (quartz tube) installed in the resistance heating furnace is heated to the temperature shown in Table 1. On the other hand, the nitrogen gas is introduced into the reaction tube after passing through the trimethyl borate, thereby introducing the trimethyl borate into the reaction tube. On the other hand, the ammonia gas is directly introduced into the reaction tube. The molar ratio of the introduction amount of ammonia to the introduction amount of trimethyl borate (ammonia/trimethyl borate) was set to 4.5. In this way, trimethyl borate and ammonia are reacted to obtain a first precursor (white powder). In addition, the reaction time is shown in Table 1.

然後,在第2步驟中,將在第1步驟獲得之第1前驅體裝入設置於電阻加熱爐內之其它反應管(氧化鋁管)中,並分別將氮氣及氨氣以表1所示之流量導入反應管內。然後,將反應管以表1所示之溫度及時間進行加熱。藉此,獲得第2前驅體。Then, in the second step, the first precursor obtained in the first step was put into other reaction tubes (alumina tubes) installed in the resistance heating furnace, and the nitrogen and ammonia were respectively as shown in Table 1. The flow rate is introduced into the reaction tube. Then, the reaction tube was heated at the temperature and time shown in Table 1. In this way, the second precursor is obtained.

然後,切斷電阻加熱爐之電源,停止氮氣及氨氣之導入,並在將反應管內之溫度下降至25℃後的狀態下,將第2前驅體靜置2小時。Then, the power of the resistance heating furnace was cut off, the introduction of nitrogen and ammonia was stopped, and the second precursor was allowed to stand for 2 hours while the temperature in the reaction tube was lowered to 25°C.

然後,在第3步驟中,將氮氣及氨氣以表1所示之流量再次導入反應管內,並且將反應管以表1所示之溫度及時間再次進行加熱。藉此,獲得第3前驅體。Then, in the third step, nitrogen and ammonia were introduced into the reaction tube again at the flow rates shown in Table 1, and the reaction tube was heated again at the temperature and time shown in Table 1. In this way, the third precursor was obtained.

然後,在第4步驟中,將在第3步驟獲得之第3前驅體裝入氮化硼製坩堝中,並於感應加熱爐中,在氮氣環境下以表1所示之溫度及時間進行加熱。藉此,獲得氮化硼粒子。Then, in the fourth step, the third precursor obtained in the third step is placed in a boron nitride crucible, and heated in an induction heating furnace at the temperature and time shown in Table 1 under a nitrogen atmosphere . In this way, boron nitride particles are obtained.

[比較例1] 不實施第3步驟,除此以外,以與實施例1同樣的方法,獲得氮化硼粒子。[Comparative Example 1] Except that the third step was not performed, the same method as in Example 1 was used to obtain boron nitride particles.

針對獲得之各氮化硼粒子,藉由以下方法分別對BET徑、全氧量、平均圓形度、及平均粒徑進行測定。結果如表1所示。For each obtained boron nitride particle, the BET diameter, total oxygen content, average circularity, and average particle diameter were measured by the following methods. The results are shown in Table 1.

(BET徑) BET徑,係根據下式所算出。 BET徑=假設1g之氮化硼為真球之1粒子時的直徑/(BET比表面積/假設1g之氮化硼為真球之1粒子時的表面積) 在此, ・假設1g之氮化硼為真球之1粒子時的直徑 =(6/(氮化硼粒子之密度×π))1/3 (惟,使用2.26g/cm3 作為氮化硼粒子之密度) ・假設1g之氮化硼為真球之1粒子時的表面積 =π×(假設1g之氮化硼為真球之1粒子時的直徑)2 ・BET比表面積 依循JIS Z 8803:2013並使用氮氣藉由BET一點法所測定之氮化硼粒子的BET比表面積。(BET diameter) The BET diameter is calculated according to the following formula. BET diameter = the diameter when 1g of boron nitride is one particle of a real ball/(BET specific surface area/the surface area when 1g of boron nitride is assumed to be one particle of a real ball) Here, ・assume 1g of boron nitride Diameter when it is 1 particle of a real sphere = (6/(density of boron nitride particles×π)) 1/3 (However, 2.26g/cm 3 is used as the density of boron nitride particles) ・Assuming 1g of nitride The surface area when boron is 1 particle of a real sphere=π×(Assuming that 1g of boron nitride is the diameter of 1 particle of a real sphere) 2 ・BET specific surface area complies with JIS Z 8803:2013 and uses nitrogen as determined by the BET one-point method The measured BET specific surface area of the boron nitride particles.

(全氧量) 全氧量,係使用氧氮分析裝置(堀場製作所(股)公司製、商品名:EMGA-620W/C)進行測定。(Total Oxygen) The total oxygen content was measured using an oxygen and nitrogen analyzer (manufactured by Horiba Manufacturing Co., Ltd., trade name: EMGA-620W/C).

(平均圓形度) 首先,針對使用掃描式電子顯微鏡(SEM)進行攝影所得之氮化硼粒子的圖像(倍率:10,000倍、圖像解像度:1280×1024像素),藉由使用圖像分析軟體(例如Mountech公司製、商品名:MacView)之圖像分析,算出氮化硼粒子的投影面積(S)及周長(L)。然後使用投影面積(S)及周長(L),依循下式: 圓形度=4πS/L2 來求得圓形度。算出針對任意選擇之100個氮化硼粒子所求得之圓形度的平均值作為平均圓形度。(Average circularity) First, the image of boron nitride particles (magnification: 10,000 times, image resolution: 1280×1024 pixels) taken by using a scanning electron microscope (SEM) is analyzed by using image analysis Image analysis of software (for example, manufactured by Mountech, trade name: MacView), calculates the projected area (S) and perimeter (L) of the boron nitride particles. Then use the projected area (S) and perimeter (L) to obtain the circularity according to the following formula: circularity = 4πS/L 2. The average circularity obtained for 100 boron nitride particles selected arbitrarily is calculated as the average circularity.

(平均粒徑) 使用蒸餾水作為使氮化硼粒子分散的分散媒,並使用六偏磷酸鈉作為分散劑,製備0.125質量%之六偏磷酸鈉水溶液。在該水溶液中以0.1g/80mL之比例添加氮化硼粒子,利用超音波均質機(例如日本精機製作所製、商品名:US-300E),在AMPLITUDE(振幅)80%的條件下進行1次1分30秒之超音波分散,藉此製備氮化硼粒子之分散液。一邊將此分散液以60rpm之條件進行攪拌一邊進行分離取樣,藉由雷射繞射散射法粒度分布測定裝置(例如貝克曼庫爾特公司製、商品名:LS-13 320)測定體積基準之粒度分布。此時,使用1.33作為水的折射率,並使用1.7作為氮化硼粒子的折射率。從測定結果,就累積粒度分布之累積值50%的粒徑(中值粒徑、d50)算出平均粒徑。(The average particle size) Distilled water was used as a dispersion medium for dispersing boron nitride particles, and sodium hexametaphosphate was used as a dispersant to prepare a 0.125% by mass sodium hexametaphosphate aqueous solution. Add boron nitride particles to the aqueous solution at a ratio of 0.1g/80mL, and use an ultrasonic homogenizer (for example, manufactured by Nippon Seiki Seisakusho, trade name: US-300E), and perform once under the condition of AMPLITUDE (amplitude) 80% Ultrasonic dispersion for 1 minute and 30 seconds to prepare a dispersion of boron nitride particles. Separate and sample the dispersion while stirring at 60 rpm, and measure the volume standard with a laser diffraction scattering method particle size distribution measuring device (for example, Beckman Coulter, trade name: LS-13 320) Particle size distribution. At this time, 1.33 was used as the refractive index of water, and 1.7 was used as the refractive index of the boron nitride particles. From the measurement results, the average particle diameter is calculated on the particle diameter (median particle diameter, d50) of 50% of the cumulative value of the cumulative particle size distribution.

使用獲得之各氮化硼粒子時的介電率及介電正切係藉由以下方法進行測定。結果顯示於表1。 以使氮化硼粒子為20體積%的量,將氮化硼粒子與聚乙烯(日本聚乙烯(股)製、商品名「NOVATECHY540」)予以混練,進行片材成形,獲得0.2mm厚之片材。混練及片材成形,係使用二軸擠製機在溫度180℃的條件下進行。使用空腔共振器法之測定裝置,以頻率36GHz、溫度25℃的條件對獲得之片材進行測定,求取片材的介電率及介電正切。The dielectric constant and dielectric tangent when each obtained boron nitride particle was used were measured by the following method. The results are shown in Table 1. The boron nitride particles are kneaded with polyethylene (manufactured by Nippon Polyethylene Co., Ltd., trade name "NOVATECHY540") so that the boron nitride particles are 20% by volume, and the sheet is formed to obtain a sheet with a thickness of 0.2 mm material. Kneading and sheet forming are performed using a two-axis extruder at a temperature of 180°C. Using a measuring device of the cavity resonator method, the obtained sheet was measured under the conditions of a frequency of 36 GHz and a temperature of 25° C., and the dielectric constant and the dielectric tangent of the sheet were determined.

[表1]   實施例1 實施例2 實施例3 比較例1 第1 步驟 溫度(°C) 1150 1150 1150 1150 時間(秒) 10 10 10 10 第2 步驟 溫度(°C) 1500 1500 1600 1500 時間(小時) 2.5 2.5 2.5 2.5 N2 流量(L/分) 10 10 10 10 NH3 流量(L/分) 15 17 15 15 第3 步驟 溫度(°C) 1500 1500 1600 - 時間(小時) 2.5 2.5 2.5 - N2 流量(L/分) 10 10 10 - NH3 流量(L/分) 15 17 15 - 第4 步驟 溫度(°C) 2000 2000 2000 2000 時間(小時) 5 5 5 5 評價 BET徑(nm) 259 204 171 236 全氧量(質量%) 0.72 0.42 0.47 1.92 平均圓形度 0.89 0.88 0.89 0.82 平均粒徑(nm) 514 679 547 950 介電率 2.58 2.56 2.58 3.47 介電正切 0.00034 0.00035 0.00035 0.00125 [Table 1] Example 1 Example 2 Example 3 Comparative example 1 Step 1 Temperature (°C) 1150 1150 1150 1150 Time (seconds) 10 10 10 10 Step 2 Temperature (°C) 1500 1500 1600 1500 Time (hour) 2.5 2.5 2.5 2.5 N 2 flow (L/min) 10 10 10 10 NH 3 flow (L/min) 15 17 15 15 Step 3 Temperature (°C) 1500 1500 1600 - Time (hour) 2.5 2.5 2.5 - N 2 flow (L/min) 10 10 10 - NH 3 flow (L/min) 15 17 15 - Step 4 Temperature (°C) 2000 2000 2000 2000 Time (hour) 5 5 5 5 Evaluation BET diameter (nm) 259 204 171 236 Total oxygen (mass%) 0.72 0.42 0.47 1.92 Average circularity 0.89 0.88 0.89 0.82 Average particle size (nm) 514 679 547 950 Dielectric rate 2.58 2.56 2.58 3.47 Dielectric Tangent 0.00034 0.00035 0.00035 0.00125

Claims (4)

一種氮化硼粒子,其BET徑為160nm以上且300nm以下,全氧量為0.4質量%以上且0.8質量%以下。A boron nitride particle having a BET diameter of 160 nm or more and 300 nm or less, and a total oxygen content of 0.4% by mass or more and 0.8% by mass or less. 如請求項1之氮化硼粒子,其平均圓形度為0.8以上。For example, the boron nitride particles of claim 1 have an average circularity of 0.8 or more. 如請求項1或2之氮化硼粒子,其平均粒徑為1μm以下。For example, the boron nitride particles of claim 1 or 2 have an average particle diameter of 1 μm or less. 一種樹脂組成物,含有樹脂及如請求項1至3中任一項之氮化硼粒子。A resin composition containing resin and boron nitride particles according to any one of claims 1 to 3.
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