TW202113096A - Sputtering target - Google Patents

Abstract

The purpose of the present disclosure is to provide a sputtering target which suppresses a chlorine element, which is foreign matter, from being mixed into the sputtering target, wherein when a thin film is formed using the sputtering target, the occurrence of abnormal discharge due to chlorine can be suppressed, and a thin film having good orientation can be formed. The sputtering target of the present disclosure contains aluminum and further contains either or both of a rare earth element and a titanium group element, and the content of chlorine is 100 ppm or less.

Description

Sputtering target

The present invention relates to a preferred sputtering target material for forming a metal film or a nitride film with good piezoelectric response in a piezoelectric element.

It is predicted that with the declining birthrate and aging society in today and in the future, the working population will decrease. Therefore, the manufacturing industry is also committed to using the automation of the Internet of Things (IoT: Internet Of Things). In addition, in the automobile industry, there is a continuous shift towards a society where AI (Artificial Intelligence), etc., become the mainstay and can drive autonomously without being operated by humans.

The most important technology in automation and autonomous driving is wireless-based ultra-high-speed communication. For wireless-based ultra-high-speed communication, high-frequency filters are indispensable. In addition, in order to increase the speed of wireless communication, it is expected that the 3.4 GHz frequency band used in the previous 4th generation mobile communication (4G) will be transferred to the 3.7 GHz, 4.5 GHz, and 28 GHz frequency bands used in the 5th generation mobile communication (5G). High-frequency side transition. If this transformation is performed, the high-frequency filter is technically more difficult in the previous SAW (Surface Acoustic Wave) filter. Therefore, the technology is constantly changing from a surface acoustic wave filter to a bulk acoustic wave (BAW: Bulk Acoustic Wave) filter.

As the piezoelectric film of BAW filter or piezoelectric element sensor, aluminum nitride film is mainly used. Aluminum nitride is known for its high amplitude amplification factor called Q value (Quality factor), so it is used as a piezoelectric film. However, since it cannot be used at high temperatures, in order to achieve high temperature and high Q of piezoelectric elements, nitride films containing aluminum and rare earth elements are more promising.

As a sputtering target used to form a nitride film containing aluminum and rare earth elements, the following sputtering target is disclosed, which is an alloy of Al and Sc and contains 25 atomic% to 50 atomic% of Sc , The oxygen content is 2000 ppm by mass or less, and the variation of Vickers hardness (Hv) is 20% or less (for example, refer to Patent Document 1). It is described that the sputtering target material is produced by undergoing a melting step and then performing plastic processing such as a forging step (for example, refer to Patent Document 1). In addition, in Patent Document 1, it is described that the content of Sc of the sputtering target TOP (upper surface of the target) and BTM (lower surface of the target) varies within a range of ±2 atomic% (paragraphs 0040 to 0041 of the specification) .

In addition, in the method of manufacturing sputtering targets containing alloys of aluminum and rare earth elements, there is the following technique: prepare the alloy target material to satisfy the ratio of aluminum and rare earth elements. The obtained alloy target material is composed of only two intermetallic compounds. The raw materials within the composition range are used to produce alloy powders of aluminum and rare earth elements from the raw materials by the atomization method, and the alloy powders obtained are produced into the alloy target by the hot pressing method or the spark plasma sintering method in a vacuum atmosphere The sintered body of the material (for example, refer to Patent Document 2).

In addition, it is known that in the Sc _x Al _1-x N alloy, the piezoelectric constant d ₃₃ changes extremely due to the composition variation of the Sc concentration (for example, refer to Non-Patent Document 1 and FIG. 3 ). Prior Art Document Patent Document

Patent Document 1: WO2017/213185 Publication Patent Document 2: Japanese Patent Laid-Open No. 2015-96647 Non-patent literature

Non-Patent Document 1: Kana Kazuhiko and others, Denso technical review Vol. 17, 2012, p202～207

[The problem to be solved by the invention]

In the manufacture of aluminum alloys, the melting point of aluminum is as low as 660°C. In contrast, the melting point of the elements added to aluminum is very high, 1541°C in the case of scandium, 1522°C in the case of yttrium, and 1522°C in the case of titanium. It is 1668°C, 1855°C in the case of zirconium, and 2233°C in the case of hafnium. Since the melting point difference between aluminum and the added element is 800°C or more, there is almost no range where aluminum and the added element are completely dissolved. .

Therefore, if the addition amount of scandium is increased relative to aluminum as in Patent Document 1, there is also a composition with a melting point of 1400°C or higher, and the growth of intermetallic compounds is different due to uneven temperature during solidification after melting. Therefore, it is difficult to produce a sputtering target with a uniform composition in the in-plane direction and the thickness direction of the sputtering target.

In addition, if the melting method is used as in Patent Document 1 and is composed only of intermetallic compounds, it becomes a very hard and brittle sputtering target, even if the ingot is formed by melting, and the sputtering target is also used for plastic processing such as forging. Prone to breakage and so on.

In addition, if it is produced by the melting method as in Patent Document 1, the precipitated phase grows significantly, and the composition unevenness occurs in the in-plane direction and the thickness direction of the sputtering target. Therefore, even if the sputtering forms a thin film, the obtained The composition distribution of the alloy film also becomes unstable.

In Patent Document 1, it is described that the content of Sc of TOP and BTM of the sputtering target varies within ±2 atomic %. However, in order to obtain the uniformity of the formed film, it is not only necessary to suppress unevenness in the thickness direction. , It is also necessary to suppress the unevenness of the in-plane direction.

In particular, as pointed out in Fig. 3 of Non-Patent Document 1, extreme changes in characteristics may be observed due to composition deviations. Therefore, it is important to maintain a uniform composition in the in-plane direction and the thickness direction.

In order to solve the problems in the production by the melting method, it is conceivable to reduce the plastic working by the following methods as in Patent Document 2: eliminate the composition deviation of aluminum and rare earths at the time of powder; or when sintering, it can be compared with the final product. The shape close to the shape is finished. However, if impurities such as fluorine, chlorine, and oxygen are excessively mixed, the fluorine, chlorine, and oxygen in the sputtering target will be released due to the heating during film formation, and abnormal discharge is likely to occur, which will cause the orientation of the obtained film. Deterioration, or generation of particles, which reduces the yield of the film.

Therefore, the object of the present invention is to provide a sputtering target, which is a sputtering target in which the mixing of fluorine as an impurity in the sputtering target is suppressed, and when the sputtering target is used to form a thin film, abnormal discharge caused by fluorine can be suppressed This occurs, and a film with good alignment is formed. [Technical means to solve the problem]

The inventors of the present invention conducted intensive research to solve the above-mentioned problems and found that by setting the concentration of the fluorine element as an impurity in the sputtering target material to a specific level or less, the problem of fluorine element mixing can be suppressed, thereby completing the present invention. invention. That is, the sputtering target of the present invention is characterized in that it contains aluminum and further contains any one or two of rare earth elements and titanium group elements, and the fluorine content is 100 ppm or less. When sputtering targets are used to form thin films, the occurrence of abnormal discharge caused by fluorine can be suppressed, and a thin film with better alignment can be formed. In addition, by suppressing the occurrence of abnormal discharge caused by fluorine, the generation of particles can be suppressed, and the thin film can be formed with good yield.

In the sputtering target material of the present invention, the content of chlorine is preferably 100 ppm or less. When sputtering targets are used to form thin films, the occurrence of abnormal discharges caused by chlorine can be suppressed, and a thin film with better alignment can be formed. In addition, by suppressing the occurrence of abnormal discharge caused by chlorine, the generation of particles can be suppressed, and the thin film can be formed with good yield.

In the sputtering target material of the present invention, the oxygen content is preferably 500 ppm or less. When the sputtering target is used to form a thin film, the occurrence of abnormal discharge caused by oxygen can be suppressed, and a thin film with better alignment can be formed. In addition, by suppressing the occurrence of abnormal discharge due to oxygen, the generation of particles can be suppressed, and the thin film can be formed with good yield.

In the sputtering target material of the present invention, it is preferable that an intermetallic compound containing at least two elements selected from aluminum, rare earth elements and titanium group elements is present in the sputtering target material. By reducing the location of elemental aluminum, elemental rare earth elements, and elemental titanium group elements, the uneven composition can be suppressed. If there is an intermetallic compound in the target, the difference in the sputtering rate between the metal elements is alleviated, and the unevenness of the composition of the obtained film becomes smaller.

In the sputtering target of the present invention, one, two, three, or four of the above-mentioned intermetallic compounds may also be present in the above-mentioned sputtering target. By reducing the location of elemental aluminum, elemental rare earth elements, and elemental titanium group elements, the uneven composition can be suppressed. By allowing one or more intermetallic compounds to exist, the difference in sputtering rate between metal elements is further alleviated, and the unevenness of the composition of the obtained film becomes smaller.

In the sputtering target of the present invention, there may be at least one nitride of at least one element selected from aluminum, rare earth elements, and titanium group elements in the sputtering target. When forming the nitride film of the piezoelectric element, it can cope with the high temperature of the piezoelectric element and increase the Q value.

In the sputtering target of the present invention, it is preferable that the rare earth element is at least any one of scandium and yttrium. When forming the nitride film of the piezoelectric element, it can cope with the high temperature of the piezoelectric element and increase the Q value.

In the sputtering target material of the present invention, it is preferable that the above-mentioned titanium group element is at least any one of titanium, zirconium, and hafnium. When forming the nitride film of the piezoelectric element, it can cope with the high temperature of the piezoelectric element and increase the Q value.

The sputtering target material of the present invention preferably has a structure in which at least one of the following materials is present in the aluminum matrix, that is, materials containing aluminum and rare earth elements, materials containing aluminum and titanium group elements, and aluminum , Rare earth elements and titanium group elements; or a structure composed of a composite phase that contains at least one or two of the following phases in the aluminum matrix phase, that is, only contains rare earth elements and unavoidable Impurities are the phases of the metal species, and the phases containing only the titanium group elements and unavoidable impurities are the metal species. It is possible to provide a sputtering target with improved conductivity, for example, to improve productivity when using a DC (direct current) sputtering device to form a film. [Effects of Invention]

Regarding the sputtering target of the present invention, the mixing of the fluorine element as an impurity in the sputtering target is suppressed. When the sputtering target is used to form a thin film, the occurrence of abnormal discharge caused by fluorine can be suppressed, resulting in good alignment.的膜。 The film. In addition, by suppressing the occurrence of abnormal discharge caused by fluorine, the generation of particles can be suppressed, and the thin film can be formed with good yield.

Hereinafter, the present invention will be explained in detail by showing embodiments, but the present invention is not limited to these descriptions to explain the present invention. As long as the effect of the present invention is exerted, the embodiment can be variously changed.

The sputtering target material of this embodiment contains aluminum and further contains any one or two of rare earth elements and titanium group elements, and the fluorine content is 100 ppm or less, preferably 50 ppm or less, more preferably 30 ppm or less . If the fluorine content exceeds 100 ppm, the fluorine in the sputtering target is released due to the heating during film formation, and the voltage applied to the sputtering target is unstable, causing abnormal discharge, resulting in the generation of particles and The yield of the formed thin film is reduced and a thin film with poor alignment is formed. Therefore, it is necessary to set the fluorine content in the sputtering target to 100 ppm or less.

In the sputtering target of this embodiment, the chlorine content is preferably 100 ppm or less, more preferably 50 ppm or less, and still more preferably 30 ppm or less. If the chlorine content exceeds 100 ppm, the chlorine in the sputtering target is released due to the heating during film formation, and the voltage applied to the sputtering target is unstable, causing abnormal discharge, which may result in the generation of particles and the The yield of the formed thin film is reduced and a thin film with poor alignment is formed. Therefore, it is preferable to adjust the chlorine content in the sputtering target to 100 ppm or less.

In the sputtering target of this embodiment, the oxygen content is preferably 500 ppm or less, more preferably 300 ppm or less, and still more preferably 100 ppm or less. If the oxygen content exceeds 500 ppm, the oxygen in the sputtering target is released due to the heating during film formation, and the voltage applied to the sputtering target is unstable, causing abnormal discharge, which may result in the generation of particles and the The yield of the formed thin film is reduced and a thin film with poor alignment is formed. Therefore, it is preferable to adjust the oxygen content in the sputtering target to 500 ppm or less.

In the sputtering target of this embodiment, the carbon content is preferably 200 ppm or less, more preferably 100 ppm or less, and still more preferably 50 ppm or less. If the carbon content exceeds 200 ppm, carbon is introduced into the film during sputtering, forming a thin film with poor crystallinity. In addition, if a strong compound is formed on the surface of the target, the conductivity will be impaired, and particles will be generated due to abnormal discharge, which will reduce the yield of the film. Therefore, it is better to adjust the carbon content in the sputtering target to 200 Below ppm.

In the sputtering target of this embodiment, the silicon content is preferably 200 ppm or less, more preferably 100 ppm or less, and still more preferably 50 ppm or less. If the silicon content exceeds 200 ppm, silicon oxides or nitrides will be formed during sputtering. This will cause abnormal discharge and generate particles from this as a starting point, which will reduce the yield of the formed film. Therefore, it is better to sputter. The silicon content in the plating target is adjusted to less than 200 ppm.

In the sputtering target of this embodiment, the difference between the composition in the sputtering plane direction and the thickness direction of the target in (condition 1) or (condition 2) and the composition used as the reference are all ± Within 3%, preferably within ±2%, more preferably within ±1%. Here, the composition used as the reference is the average value of the composition measured in accordance with (Condition 1) or (Condition 2) at a total of 18 places. If the difference between the composition and the reference composition exceeds ±3%, the sputtering rate may be different when the sputtering target is formed. When the piezoelectric film of the piezoelectric element is formed, the piezoelectric The piezoelectric properties of the film are different, and even if it is the same substrate, there are cases where the composition differs depending on the location of the piezoelectric film, resulting in different piezoelectric properties. Therefore, in order to suppress the deterioration of the yield of the piezoelectric element, it is preferable to control the difference between the composition of the sputtering target in the sputtering plane direction and the target thickness direction and the standard composition within ±3%. If it has a uniform composition in the in-plane direction and the thickness direction, when forming a thin film used in piezoelectric elements, etc., it is possible to suppress the decrease in yield due to changes in characteristics such as piezoelectric responsiveness. The change is caused by composition deviation.

(Condition 1) In-plane direction of sputtering: the above-mentioned sputtering target is a disc-shaped target with a center of O and a radius of r, and the measurement position of the composition analysis is placed on an imaginary cross line perpendicular to the center O as the intersection point, and set as the center O is 1 location, a total of 4 locations with a distance of 0.45r from the center O, and a total of 4 locations with a distance of 0.9r from the center O, a total of 9 locations. Target thickness direction: forming a cross-section passing through any line of the imaginary cross line. The cross-section is a rectangle with a longitudinal direction of t (that is, the thickness of the target material is t) and a transverse direction of 2r. For the measurement position of the composition analysis, set the following A total of 9 locations are used as measurement locations: the center X on the vertical transverse line passing through the center O and a total of 3 locations (called a location, X location, and b location) at a distance of 0.45t from the center X on the above cross section. The location is separated by 0.9r from the left and right sides in a total of 2 places, from the X location to the left and right sides by 0.9r in a total of 2 locations, and from the b location to the left and right sides by 0.9r in a total of 2 locations. (Condition 2) In-plane direction of sputtering: The above-mentioned sputtering target is a rectangle with a longitudinal length of L1 and a horizontal length of L2 (including squares with equal L1 and L2; or rectangles including cylindrical sides with length J and circumference K expanded And the obtained rectangle, in this form, L2 corresponds to the length J, L1 corresponds to the circumference K, and the relationship between the length J and the circumference K is J>K, J=K or J<K), and the composition analysis When the measuring position is on the imaginary cross line orthogonal to the center of gravity O, and the imaginary cross line is orthogonal to the side of the rectangle, set the following 9 points in total: the center of gravity O is 1, and the imaginary cross line is longitudinally aligned with the center of gravity O is separated by a distance of 0.25L1 in a total of 2 locations, a total of 2 locations is separated by a distance of 0.25L2 from the center of gravity O in a transverse direction, a total of 2 locations is separated from a center of gravity O in a longitudinal direction by a distance of 0.45L1, and a distance of 0.45L2 in a transverse direction from the center of gravity O 2 locations. Target thickness direction: forming a cross section passing through a line parallel to either side of the longitudinal direction L1 and the transverse direction L2 in the imaginary cross line. When one side is the transverse direction L2, the longitudinal direction of the cross section is t (that is, the thickness of the above target is t), the horizontal is a rectangle with L2, and for the measurement location of composition analysis, set the following 9 locations as measurement locations: a total of 3 locations on the center X on the vertical cross-section line passing through the center of gravity O and a distance of 0.45t from the center to the center X totaling 3 ( Called a point, X point, b point), in the above section, from point a to the left and right sides away from 0.45L2, a total of 2 points, from X point to the left and right sides, away from 0.45L2, a total of 2 points, and from point b Go to the left and right sides away from 0.45L2 for a total of 2 places.

Figure 1 is a schematic diagram showing the measurement location (hereinafter, also referred to as the measurement location) for composition analysis in the sputtering surface direction of the disc-shaped target. Refer to Figure 1 for the sputtering target of (Condition 1) The measurement location in the direction of the plating surface will be explained. In the case of a disc-shaped target, the radius is preferably 25 to 225 mm, more preferably 50 to 200 mm. The thickness of the target material is preferably 1-30 mm, more preferably 3-26 mm. In this embodiment, it is expected to be more effective for large-scale targets.

In FIG. 1, the sputtering target 200 is a disc-shaped target with a center O and a radius r. The measurement location is on the imaginary cross line (L) orthogonal to the center O, and the center O is set to 1 (S1), and the distance from the center O is 0.45r, a total of 4 places (S3, S5, S6, and S8). And a total of 9 locations (S2, S4, S7, and S9) in a total of 4 locations (S2, S4, S7, and S9) at a distance of 0.9r from the center O.

Fig. 2 is a schematic diagram showing the measurement location of the composition analysis of the disc-shaped target shown in the BB section of Fig. 1 in the thickness direction of the target. Refer to Fig. 2 for the target of the sputtering target of (Condition 1) The measurement location in the thickness direction will be explained.

In Fig. 2, the B-B section of Fig. 1 is a rectangle with a longitudinal direction of t (that is, the thickness of the target material is t) and a lateral direction of 2r. In addition, regarding the measurement location, the following 9 locations are set as measurement locations: the center X (C1) on the vertical transverse line passing through the center O, and a total of 3 locations at a distance of 0.45t from the center X (referred to as a location (C4), Point X (C1), point b (C5)), on the above cross section, from point a to the left and right sides, a total of 2 points (C6, C7) away from the left and right sides, 0.9r away from the point X to the left and right sides, a total of 2 (C2, C3), and a total of 2 places (C8, C9) away from point b to the left and right sides by 0.9r.

Figure 3 is a schematic diagram showing the measurement location of the composition analysis in the sputtering surface direction of the square plate target. Refer to Figure 3 for the measurement location of the sputtering target in the sputtering surface direction of (Condition 2). Description. In the case of a rectangular or square target, the longitudinal length and the lateral length are preferably 50-450 mm, more preferably 100-400 mm. The thickness of the target material is preferably 1-30 mm, more preferably 3-26 mm. In this embodiment, it is expected to be more effective for large-scale targets.

The sputtering target 300 is a rectangular target with a longitudinal length of L1 and a lateral length of L2 (including squares with equal L1 and L2). In FIG. 3, the sputtering target 300 is shown in the form of L1=L2. When the measurement position is on the imaginary cross line (Q) orthogonal to the center of gravity O, and the imaginary cross line is orthogonal to the side of the rectangle (or square), set it as the following 9 points in total: the center of gravity O is 1 point (P1 ), a total of 2 locations (P6, P8) separated from the center of gravity O by 0.25L1 in the longitudinal direction on the imaginary cross line, 2 locations (P3, P5) separated from the center of gravity O in the transverse direction (P3, P5) in total, and separated from the center of gravity O in the longitudinal direction A total of 2 locations (P7, P9) with a distance of 0.45L1, and a total of 2 locations with a distance of 0.45L2 from the center of gravity O in the lateral direction (P2, P4). Furthermore, when the sputtering target is rectangular, L1 and L2 can be appropriately selected regardless of the length of the side.

Fig. 4 is a schematic diagram showing the measurement position of the composition analysis in the thickness direction of the square plate-shaped target shown in the CC section of Fig. 3, refer to Fig. 4 for the target of the sputtering target of (condition 2) The measurement location in the thickness direction will be explained.

In Fig. 4, the CC cross section of Fig. 3 forms a cross section passing through a line parallel to the horizontal side. The cross section is a rectangle with a longitudinal direction of t (that is, the thickness of the target material is t) and a transverse direction of L2. Suppose a total of 9 locations as the measurement locations: the center X on the vertical transverse line passing through the center of gravity O, and a total of 3 locations at a distance of 0.45t from the center X (called a location (D4), X location (D1), b location (D5)), on the above cross-section, a total of 2 locations (D6, D7) away from the point a by 0.45L2 toward the left and right sides (D6, D7), and a total of 2 locations (D2, D3) from the point X toward the left and right sides by 0.45L2, and A total of 2 places (D8, D9) are 0.45L2 away from point b toward the left and right sides.

(Cylinder shape sputtering target) Figure 5 is a conceptual diagram for explaining the measurement location of a cylindrical target. When the sputtering target is cylindrical, the side of the cylinder is the sputtering surface, and the expanded view becomes a rectangle or a square. Therefore, (condition 2) can be considered in the same manner as in the case of FIGS. 3 and 4. In FIG. 5, when the sputtering target 400 has a cylindrical shape with a height (length) of J and a circumference of the main body as K, consider the E-E section and the section as the D-D spreading surface at both ends. First, the measurement part for the composition analysis in the thickness direction of the target material is located in the E-E cross section, and it is considered in the same manner as in FIG. 4. That is, it is considered that the height J of the cylindrical material corresponds to L2 in FIG. 4, and the thickness of the cylindrical material corresponds to the thickness t of FIG. In addition, the measurement part in the direction of the sputtering surface is located on the D-D development surface, and it is considered in the same manner as in FIG. 3. That is, it is considered that the height J of the cylindrical material corresponds to L2 in FIG. 3, and the circumference K of the main body of the cylindrical material corresponds to L1 in FIG. The relationship between the length J and the perimeter K is J>K, J=K, or J<K. In the case of a cylindrical target, the length of the circumference of the main body of the cylinder is preferably 100-350 mm, more preferably 150-300 mm. The length of the cylinder is preferably 300-3000 mm, more preferably 500-2000 mm. The thickness of the target material is preferably 1-30 mm, more preferably 3-26 mm. In this embodiment, it is expected to be more effective for large-scale targets.

The sputtering target material of this embodiment preferably has a structure in which at least one of the following materials is present in the aluminum matrix, that is, materials containing aluminum and rare earth elements, materials containing aluminum and titanium group elements, and Materials of aluminum, rare earth elements and titanium group elements; or a structure composed of a composite phase that contains at least any one of the following phases in the aluminum parent phase, that is, only contains rare earth elements and unavoidable impurities as A phase of metal species, a phase containing only titanium group elements and inevitable impurities as metal species, and a phase containing only rare earth elements, titanium group elements and inevitable impurities as metal species. To provide a sputtering target with improved conductivity, for example, to improve productivity when using a DC sputtering device to form a film.

Next, with respect to this embodiment, the specific microstructure of the sputtering target will be described. The specific microstructure of the sputtering target is classified into, for example, the first structure to the fifth structure and their variations. Here, the form of the aluminum matrix is the second structure, the fifth structure, and the modification examples thereof, especially the second structure and the second structure-2 as the modification example, and the fifth structure and the modification thereof Example of the fifth organization-2.

[First organization] The sputtering target material of this embodiment has a first structure composed of at least one of the following materials, that is, a material containing aluminum and rare earth elements (hereinafter, also referred to as RE), and aluminum and titanium group elements (hereinafter, Also denoted as TI) materials and materials containing aluminum, rare earth elements and titanium group elements. That is, there are the following 7 groups of material combinations in the first organization: there is a form of material A containing Al and RE, material B containing Al and TI, or material C containing Al, RE, and TI; and material A and material A form in which B coexist, material A and material C coexist, material B and material C coexist, or material A, material B, and material C coexist.

In this embodiment, the term "material" refers to the material constituting the sputtering target, for example, it includes alloy or nitride. Furthermore, the alloy includes, for example, a solid solution, a eutectic, and an intermetallic compound. Furthermore, if the nitride is a metalloid, it can also be included in the alloy.

[Second Organization] The sputtering target material of this embodiment has a second structure in which at least one of the following materials is present in the aluminum matrix, namely, materials containing aluminum and rare earth elements, materials containing aluminum and titanium group elements, and aluminum, Materials of rare earth elements and titanium group elements. That is, in the second structure, there is a combination of the 7 groups of materials listed in the first structure in the aluminum matrix phase. That is, there is a combination of the following forms in the second structure, that is, the form of material A, material B or material C in the aluminum matrix phase; and the coexistence of material A and material B, and material A and material in the aluminum matrix phase A form in which C coexist, material B and material C coexist, or material A, material B, and material C coexist.

In this embodiment, the term "aluminum mother phase" may also be referred to as an aluminum matrix. In Fig. 6, the concept of the aluminum matrix phase is explained by taking the second structure as an example. In the sputtering target 100, its fine structure is based on the presence of a material containing aluminum and rare earth elements in the aluminum matrix phase, specifically, an Al-RE alloy. That is, the Al matrix 3 joins a plurality of Al-RE alloy particles 1 together. The Al-RE alloy particles 1 are aggregates of crystal grains 2 of the Al-RE alloy. The boundary between the grain 2a of the Al-RE alloy and the grain 2b of the adjacent Al-RE alloy is the grain boundary. The Al parent phase 3 is an aggregate of aluminum crystal grains 4. The boundary between the aluminum crystal grain 4a and the adjacent aluminum crystal grain 4b is a grain boundary. In this embodiment, the term "parent phase" refers to a phase in which a plurality of metal particles, alloy particles, or nitride particles are joined together, and the joined phase itself is a concept of an aggregate of crystal grains. Generally speaking, intermetallic compounds or nitrides have the characteristics of lacking electrical conductivity or plastic workability (ductility) which are the characteristics of metals. When the Al-RE alloy of the sputtering target is composed of only intermetallic compounds, or only nitrides, or intermetallic compounds and nitrides, the conductivity of the sputtering target tends to decrease. However, by allowing the aluminum (mother) phase to exist, the conductivity of the sputtering target as a whole can be prevented from decreasing. In addition, when the Al-RE alloy of the sputtering target is composed of only intermetallic compounds, or only nitrides, or intermetallic compounds and nitrides, the sputtering target tends to become very brittle . However, by allowing the aluminum (mother) phase to exist, the brittleness of the target material can be alleviated.

[Third Organization] The sputtering target material of this embodiment has a third structure composed of a composite phase. The composite phase includes any one or two of the following phases, namely, a phase that contains only aluminum and inevitable impurities as metal species, and only contains rare earths Class elements and unavoidable impurities are used as metal species, and only titanium group elements and unavoidable impurities are used as metal species. That is, in the third structure there is a combination of three groups of the following morphologies, namely, a morphology composed of the following composite phases including a phase containing aluminum as a metal species and a phase containing a rare earth element as a metal species; A morphology composed of a composite phase including a phase including aluminum as a metal species and a phase including a titanium group element as a metal species; or a morphology composed of the following composite phase including a phase including aluminum as a metal species, Rare earth elements are used as the phase of the metal species and the phase containing the titanium group elements as the metal species.

Examples of the inevitable impurities include Fe, Ni, etc., and the atomic% concentration of the inevitable impurities is, for example, preferably 200 ppm or less, and more preferably 100 ppm or less.

In the present embodiment, the term "phase" refers to a solid phase, which refers to the concept of a collection of particles of the same composition, such as a collection of particles of the same composition.

In this embodiment, the term "complex phase" refers to the concept of two or more types of "phase". The phases are different in composition in each category.

[Fourth Organization] The sputtering target material of this embodiment has a fourth structure composed of a composite phase, the composite phase including a phase containing aluminum and further containing any one or two of rare earth elements and titanium group elements; and at least any of the following phases Phase, that is, a phase containing only aluminum and inevitable impurities as metal species, a phase containing only rare earth elements and inevitable impurities as metal species, and a phase containing only titanium group elements and inevitable impurities as metal species . That is, there are 21 combinations of the following phases in the fourth organization. Here, the phase containing aluminum and rare earth elements is referred to as phase D, the phase containing aluminum and titanium group elements is referred to as phase E, and the phase containing aluminum, rare earth elements, and titanium group element is referred to as phase F. Also, the phase containing only aluminum and unavoidable impurities as the metal species is referred to as phase G, and the phase containing only rare earth elements and unavoidable impurities as the metal species is referred to as phase H, which will contain only titanium elements and inevitable impurities. The phase of the impurity to be avoided as the metal species is set to phase I. The fourth organization is composed of the following composite phases, namely, phase D and phase G; phase D and phase H; phase D and phase I; phase D, phase G and phase H; phase D, phase G and phase I; phase D, Phase H and Phase I; Phase D, Phase G, Phase H, and Phase I; Phase E and Phase G; Phase E and Phase H; Phase E and Phase I; Phase E, Phase G, and Phase H; Phase E, Phase G And phase I; phase E, phase H and phase I; phase E, phase G, phase H and phase I; phase F and phase G; phase F and phase H; phase F and phase I; phase F, phase G and phase H; phase F, phase G, and phase I; phase F, phase H, and phase I; or phase F, phase G, phase H, and phase I.

[Fifth Organization] The sputtering target material of this embodiment has a fifth structure composed of a composite phase. The composite phase contains at least one or two of the following phases in the aluminum matrix phase, that is, only contains rare earth elements and unavoidable impurities A phase that is a metal species, and a phase that contains only titanium group elements and unavoidable impurities as a metal species. The fifth structure is composed of a composite phase in which the following three groups of phases exist in the aluminum matrix phase. That is, the fifth structure is composed of a composite phase in which phase H is present in the aluminum parent phase, a composite phase in which phase I is present in the aluminum parent phase, or a composite phase in which phase H and phase I are present in the aluminum parent phase.

In this embodiment, the term "aluminum mother phase" may also be referred to as an aluminum matrix. In the fifth structure, in the sputtering target, the microstructure is based on the presence of phase H, phase I, or both phase H and phase I in the aluminum matrix phase to form a composite phase. The aluminum matrix is an aggregate of aluminum crystal grains, and the boundary between the aluminum crystal grain and the adjacent aluminum crystal grain is the grain boundary. Phase H is, for example, the concept of an aggregate of particles of the same composition. Phase I is also the same. When there are both phase H and phase I, there are two phases with different compositions in the aluminum matrix phase.

[Changes in the Fifth Organization] The sputtering target material of this embodiment includes a form in the fifth structure. That is, the composite phase further includes a phase containing only aluminum and unavoidable impurities as metal species. The fifth structure is composed of a composite phase in which the following three groups of phases exist in the aluminum matrix phase. That is, the composite phase is a composite phase in which phase H and phase G are present in an aluminum parent phase, a composite phase in which phase I and phase G are present in an aluminum parent phase, or a phase H, phase I, and phase are present in an aluminum parent phase. The compound phase of G.

The first organization to the fifth organization and the modification examples of the fifth organization further include the following forms.

[First Organization-2] The sputtering target material of this embodiment exemplifies the following forms: having a first structure and the above-mentioned material is an alloy; having a first structure and the above-mentioned material is a nitride; or having a first structure and the above-mentioned material is a combination of an alloy and a nitride. Here, the material has a combination of the following 7 groups of materials: there is a form of material A containing Al and RE, material B containing Al and TI, or material C containing Al, RE and TI; and material A and material B coexist, A form in which material A and material C coexist, material B and material C coexist, or material A, material B, and material C coexist.

[Second Organization-2] The sputtering target material of this embodiment exemplifies the following forms: having a second structure and the above-mentioned material is an alloy; having a second structure and the above-mentioned material is a nitride; or having a second structure and the above-mentioned material is a combination of an alloy and a nitride. Here, the material is a combination of the 7 groups listed in [First Organization].

[Third Organization-2] The sputtering target material of this embodiment exemplifies the following forms: a composite having a third structure and the composite phase is a metal phase; a composite having a third structure and the composite phase is a nitride phase; or a composite having a third structure and the composite phase It is a composite of metal phase and nitride phase. Here, the "composite phase is a composite of metal phases" refers to a composite phase including an Al phase and an RE phase; a composite phase including an Al phase and a TI phase; or a composite phase including an Al phase, an RE phase and a TI phase. The so-called "composite phase is a composite of nitride phase" refers to a composite phase including AlN phase and REN phase; a composite phase including AlN phase and TIN phase; or a composite phase including AlN phase, REN phase and TIN phase. In addition, the so-called "composite phase is a composite of a metal phase and a nitride phase" refers to, for example, a composite phase including an Al phase and a REN phase; a composite phase including an AlN phase and an RE phase; a composite phase including an Al phase, an AlN phase, and an RE phase Composite phase; composite phase including Al phase, AlN phase and REN phase; composite phase including Al phase, RE phase and REN phase; composite phase including AlN phase, RE phase and REN phase; including Al phase, AlN phase, RE Composite phase of phase and REN phase; composite phase including Al phase and TIN phase; composite phase including AlN phase and TI phase; composite phase including Al phase, AlN phase and TI phase; including Al phase, AlN phase and TIN phase The composite phase; the composite phase including the Al phase, the TI phase and the TIN phase; the composite phase including the AlN phase, the TI phase and the TIN phase; the composite phase including the Al phase, the AlN phase, the TI phase and the TIN phase; the composite phase including the Al phase, Composite phase of AlN phase, RE phase and TI phase; composite phase including Al phase, AlN phase, REN phase and TI phase; composite phase including Al phase, AlN phase, RE phase and TIN phase; including Al phase, AlN phase , REN phase and TIN phase composite phase; including Al phase, RE phase, REN phase and TI phase composite phase; including AlN phase, RE phase, REN phase and TI phase composite phase; including Al phase, RE phase, REN Composite phase of phase and TIN phase; composite phase including AlN phase, RE phase, REN phase and TIN phase; composite phase including Al phase, RE phase, TI phase and TIN phase; including AlN phase, RE phase, TI phase and Composite phase of TIN phase; composite phase including Al phase, REN phase, TI phase and TIN phase; composite phase including AlN phase, REN phase, TI phase and TIN phase; including Al phase, AlN phase, RE phase, REN phase And TI phase composite phase; composite phase including Al phase, AlN phase, RE phase, REN phase and TIN phase; composite phase including Al phase, AlN phase, RE phase, TI phase and TIN phase; including Al phase, AlN phase The composite phase of phase, REN phase, TI phase and TIN phase; composite phase including Al phase, RE phase, REN phase, TI phase and TIN phase; composite phase including AlN phase, RE phase, REN phase, TI phase and TIN phase Phase; or a composite phase including Al phase, AlN phase, RE phase, REN phase, TI phase and TIN phase. Furthermore, the description of the price is omitted.

In this embodiment, the term "metallic phase" is the concept of a phase containing a single metal element.

In this embodiment, the term "nitride phase" is the concept of a phase including nitride.

[Fourth Organization-2] The sputtering target material of this embodiment exemplifies the following forms: having a fourth structure and the composite phase is a composite of an alloy phase and a metal phase; having a fourth structure and the composite phase is a composite of an alloy phase and a nitride phase; having a fourth structure Structure and the composite phase is a composite of a nitride phase and a metal phase; have a fourth structure and the composite phase is a composite of a nitride phase and another nitride phase; or have a fourth structure and the composite phase is an alloy phase, metal Combination of phase and nitride phase. Here, the metal phase system phase G, phase H, and phase I are the phases that are not nitrided or oxidized but are in a metallic state, and the alloy phase system phase D, phase E, and phase F are respectively not nitrided or oxidized In the case of the phase in the alloy state, the nitride phase is the case where phase G, phase H, phase I, phase D, phase E, and phase F are respectively nitrided phases. In addition, there are cases where one type of metal phase, alloy phase, and nitride phase exist in the target material, and there are cases where two or more types exist, and there are cases where a plurality of metal phases, alloy phases, and nitride phases exist in combination. As an example of these forms, for example, there are the following forms, that is, at least one of the alloy phases of phase D or the nitride phase of phase D includes the metallic phase of phase G, the nitride phase of phase G, and the phase H At least one of the metallic phase, the nitride phase of the phase H, the metallic phase of the phase I, and the nitride phase of the phase I; at least one of the alloy phases of the phase E or the nitride phase of the phase E contains phase G At least one of the metallic phase, the nitride phase of phase G, the metallic phase of phase H, the nitride phase of phase H, the metallic phase of phase I, and the nitride phase of phase I; in the alloy phase of phase F or the alloy phase of phase F At least one of the nitride phases includes at least one of the metallic phase of phase G, the nitride phase of phase G, the metallic phase of phase H, the nitride phase of phase H, the metallic phase of phase I, and the nitride phase of phase I 1 kind.

In this embodiment, the term "alloy phase" is a concept that includes alloy phases.

[Fifth Organization-2] The sputtering target material of this embodiment can exemplify the following forms: having a fifth structure and the composite phase is a composite of an aluminum matrix phase and at least one metal phase; having a fifth structure and the composite phase is an aluminum matrix phase and aluminum nitride A composite of at least one nitride phase among phases, a nitride phase of a rare earth element, and a nitride phase of a titanium group element; or a fifth structure and the composite phase is a composite of a metal phase and a nitride phase. Here, the term "at least one metal phase" means only phase H, only phase I, or both phase H and phase I. The so-called "composite phase is a composite of at least one nitride phase among aluminum matrix phase and aluminum nitride phase, rare earth element nitride phase, and titanium group element nitride phase", for example, includes Al matrix phase and REN phase Composite phase; composite phase including Al parent phase and TIN phase; composite phase including Al parent phase, AlN phase and REN phase; composite phase including Al parent phase, AlN phase and TIN phase; including Al parent phase and REN phase And the composite phase of TIN phase; or the composite phase including Al parent phase, AlN phase, REN phase and TIN phase. The so-called "composite phase is the combination of metal phase and nitride phase" refers to, for example, a composite phase including Al parent phase, RE phase and TIN phase; composite phase including Al parent phase, REN phase and TI phase; including Al parent phase , AlN phase, RE phase and TI phase composite phase; composite phase including Al parent phase, AlN phase, REN phase and TI phase; composite phase including Al parent phase, AlN phase, RE phase and TIN phase; including Al parent The composite phase of phase, RE phase, REN phase and TI phase; composite phase including Al parent phase, RE phase, REN phase and TIN phase; composite phase including Al parent phase, RE phase, TI phase and TIN phase; including Al Composite phase of parent phase, REN phase, TI phase and TIN phase; composite phase including Al parent phase, AlN phase, RE phase, REN phase and TI phase; including Al parent phase, AlN phase, RE phase, REN phase and TIN Composite phase of phase; composite phase including Al parent phase, AlN phase, RE phase, TI phase and TIN phase; composite phase including Al parent phase, AlN phase, REN phase, TI phase and TIN phase; including Al parent phase, Composite phase of RE phase, REN phase, TI phase and TIN phase; or composite phase including Al parent phase, AlN phase, RE phase, REN phase, TI phase and TIN phase. Furthermore, N refers to nitrogen element, for example, "AlN phase" refers to aluminum nitride phase. In addition, the description of the valence of the nitride is omitted.

The fifth structure-2 includes the following morphology, that is, the above-mentioned composite phase is a composite of a nitride phase that further includes an aluminum nitride phase. That is, the composite phase in the fifth structure-2 is a composite phase in which an AlN phase is added to each of the morphological examples listed in the fifth structure. Specifically, in the fifth organization-2, as the present embodiment, the following cases are particularly included, that is, (1) "The composite phase is a composite of at least one nitride phase among the aluminum parent phase and the aluminum nitride phase, the nitride phase of the rare earth element, and the nitride phase of the titanium group element" includes the Al parent phase, AlN phase, and Composite phase of REN phase; composite phase including Al parent phase, AlN phase and TIN phase; or composite phase including Al parent phase, AlN phase, REN phase and TIN phase; and (2) "The composite phase is the composite of the metal phase and the nitride phase" is the composite phase including the Al parent phase, the AlN phase, the RE phase and the TI phase; the composite phase including the Al parent phase, the AlN phase, the REN phase and the TI phase ; Composite phase including Al parent phase, AlN phase, RE phase and TIN phase; Composite phase including Al parent phase, AlN phase, RE phase, REN phase and TI phase; including Al parent phase, AlN phase, RE phase, REN Composite phase of phase and TIN phase; composite phase including Al parent phase, AlN phase, RE phase, TI phase and TIN phase; composite phase including Al parent phase, AlN phase, REN phase, TI phase and TIN phase; or A composite phase of Al parent phase, AlN phase, RE phase, REN phase, TI phase and TIN phase.

In the sputtering target of this embodiment, it is preferable that an intermetallic compound is present in the sputtering target, and the intermetallic compound includes at least two elements selected from aluminum, rare earth elements, and titanium group elements. For example, in the first organization or the second organization, such an intermetallic compound exists in the sputtering target. In addition, when there is an alloy phase in the fourth structure, an intermetallic compound exists in the alloy phase. By reducing the location of elemental aluminum, elemental rare earth elements, and elemental titanium group elements, the uneven composition can be suppressed. In addition, when the target contains a combination of metal elements, there will be significant differences in the sputtering rate of each element during sputtering. Therefore, it is difficult to obtain a homogeneous film. If there is an intermetallic compound in the target, the metal The difference in sputtering rate between the elements is alleviated, and the unevenness of the composition of the obtained film becomes smaller.

In the sputtering target of this embodiment, one, two, three, or four of the above-mentioned intermetallic compounds may be present in the above-mentioned sputtering target. For example, when there is an alloy phase in the first structure, the second structure, or the fourth structure, there are one, two, three, or four intermetallic compounds in the sputtering target according to the number of metal species. When the target contains a combination of metal elements, the sputtering rate of each element will be significantly different during sputtering. Therefore, it is difficult to obtain a homogeneous film. By making the intermetallic compounds exist in one or more species, the metal The difference in sputtering rate between the elements is further alleviated, and the unevenness of the composition of the obtained film becomes smaller.

In the sputtering target of the present embodiment, there may be at least one nitride of at least one element selected from aluminum, rare earth elements, and titanium group elements in the sputtering target. When forming the nitride film of the piezoelectric element, it can cope with the high temperature of the piezoelectric element and increase the Q value. For example, in the first to fifth structures, nitrides are present due to the introduction of nitrogen elements. There are one, two, three, or four or more types of nitrides according to the number of metal types.

In the sputtering target material of this embodiment, it is preferable that the rare earth element is at least one of scandium and yttrium. When forming the nitride film of the piezoelectric element, it can cope with the high temperature of the piezoelectric element and increase the Q value. As a rare earth element, there is only scandium, only yttrium or a combination of scandium and yttrium. When both scandium and yttrium are contained as rare earth elements, for example, there are Al-Sc-Y materials or Al-Sc-Y phases. In addition, there are also Al-Sc materials, Al-Y materials and The Al-Sc-Y material is in the form of at least two materials, or the form in which at least two phases of Al-Sc phase, Al-Y phase and Al-Sc-Y phase exist simultaneously.

In the sputtering target material of this embodiment, it is preferable that the above-mentioned titanium group element is at least any one of titanium, zirconium, and hafnium. When forming the nitride film of the piezoelectric element, it can cope with the high temperature of the piezoelectric element and increase the Q value. As the titanium group element, there are cases where only titanium; only zirconium; only hafnium; titanium and zirconium; titanium and hafnium; zirconium and hafnium; or titanium, zirconium and hafnium. For example, when titanium and zirconium are contained as titanium group elements, for example, there are Al-Ti-Zr materials or Al-Ti-Zr phases. In addition, there are also Al-Ti materials and Al-Zr materials. And Al-Ti-Zr material at least two kinds of material morphology, or at least two phases of Al-Ti phase, Al-Zr phase and Al-Ti-Zr phase are present at the same time. In addition, when both titanium and hafnium are contained, for example, there are Al-Ti-Hf materials or Al-Ti-Hf phases. In addition, there are also Al-Ti materials, Al-Hf materials and Al- The Ti-Hf material is in the form of at least two materials, or in the form of at least two phases of Al-Ti phase, Al-Hf phase and Al-Ti-Hf phase at the same time. In addition, when both zirconium and hafnium are contained, for example, there are Al-Zr-Hf materials or Al-Zr-Hf phases. In addition, there are also Al-Zr materials, Al-Hf materials and Al- The Zr-Hf material is in the form of at least two materials, or the form in which at least two phases of Al-Zr phase, Al-Hf phase and Al-Zr-Hf phase exist simultaneously. When titanium, zirconium, and hafnium are included, for example, there are Al-Ti-Zr-Hf materials or Al-Ti-Zr-Hf phases. In addition, there are also Al-Ti materials, Al-Zr materials, and Al -Hf material, Al-Ti-Zr material, Al-Ti-Hf material, Al-Zr-Hf material and Al-Ti-Zr-Hf material at least two kinds of materials, or the presence of Al-Ti phase, Al -Zr phase, Al-Hf phase, Al-Ti-Zr phase, Al-Ti-Hf phase, Al-Zr-Hf phase and Al-Ti-Zr-Hf phase at least two phases, and then in the above form Among them, there is a form in which a material or phase containing two of Ti, Zr and Hf is added in addition to Al, and a form in which a material or phase containing one of Ti, Zr and Hf is added in addition to Al.

In the sputtering target of the present embodiment, examples of rare earth elements contained in aluminum include scandium, yttrium, etc., and examples of titanium group elements contained in aluminum include titanium, zirconium, and hafnium. The content of scandium in the target is preferably 5 to 75 atomic %. More preferably, it is 10 to 50 atomic %. The content of yttrium in the target is preferably 5 to 75 atomic %. More preferably, it is 10 to 50 atomic %. The content of titanium in the target is preferably 5 to 75 atomic %. More preferably, it is 10 to 50 atomic %. The content of zirconium in the target is preferably 5 to 75 atomic %. More preferably, it is 10 to 50 atomic %. The content of hafnium in the target is preferably 5 to 75 atomic %. More preferably, it is 10 to 50 atomic %. The sputtering target material of the present embodiment contains at least one of aluminum and the above-mentioned elements so that they satisfy the above-mentioned contents.

When forming an alloy containing rare earth elements and titanium group elements in aluminum, first, an aluminum-rare earth element alloy such as an aluminum-scandium alloy and an aluminum-yttrium alloy is formed within the above-mentioned composition range. Next, an alloy of aluminum-titanium group elements such as aluminum-titanium alloy, aluminum-zirconium alloy, and aluminum-hafnium alloy is formed within the above-mentioned composition range. Thereafter, by adjusting the content of each of the aluminum-rare earth element alloy and the aluminum-titanium group element alloy and mixing them, an aluminum-rare earth element-titanium group element alloy is formed. In addition, instead of mixing binary alloys as described above to form a ternary alloy, it is also possible to directly form an alloy of aluminum-rare earth element-titanium group element. By forming an intermetallic compound in the sputtering target or forming a nitride film during sputtering, a piezoelectric film with a high Q value can be formed even at a high temperature.

The manufacturing method of the sputtering target material of this embodiment is demonstrated. The manufacturing method of the sputtering target material of this embodiment has: the first step of manufacturing (1) raw materials containing aluminum and rare earth elements, (2) raw materials containing aluminum and titanium group elements, or (3) containing aluminum, Raw materials of rare earth elements and titanium group elements; the second step is to produce (1) aluminum and rare earth element alloy powder (aluminum-rare earth elements), (2) aluminum and Titanium group element alloy powder (aluminum-titanium group element), or (3) aluminum, rare earth element and titanium group element alloy powder (aluminum-rare-earth element-titanium group element); and the third step, which consists of the above The powder obtained in the second step obtains (1) a sintered body of aluminum-rare earth element, (2) a sintered body of aluminum-titanium group element, and (3) a sintered body of aluminum-rare earth element-titanium group element. In addition, in the case of manufacturing a sputtering target containing an aluminum parent phase, the method for manufacturing the sputtering target includes: the first step is to manufacture aluminum raw materials that are expected to mainly become the parent phase, and as expected to be mainly present in the parent phase (1) raw materials containing aluminum and rare earth elements, (2) raw materials containing aluminum and titanium group elements, or (3) raw materials containing aluminum, rare earth elements and titanium group elements; 2 step, which is to produce aluminum powder expected to mainly become the parent phase, and (1) aluminum and rare earth elements as the alloy powder expected to be the material or phase mainly present in the parent phase, from the raw materials produced in the first step above Alloy powder (aluminum-rare earth element), (2) alloy powder of aluminum and titanium group element (aluminum-titanium group element), or (3) alloy powder of aluminum, rare earth element and titanium group element (aluminum-rare earth) Element-titanium group element); and the third step of obtaining (1) a sintered body of aluminum and aluminum-rare earth element, and (2) a sintered body of aluminum and aluminum-titanium group element from the powder obtained in the second step above , Or (3) A sintered body of aluminum and aluminum-rare earth element-titanium group element.

[The first step] This step is to produce the raw materials used in the second step to produce aluminum-rare earth element alloy powder, aluminum-titanium group element alloy powder or aluminum-rare earth element-titanium group element alloy powder step. The raw materials (hereinafter referred to as "raw materials") produced in the first step for powder production can be exemplified in the following forms: (1A) Prepare the single metals of the constituent elements of the alloy target as the starting raw materials, and mix them As a raw material; (2A) Prepare an alloy with the same composition as the alloy target as the starting material, and use it as the raw material; or (3A) Prepare the same or missing part of the constituent elements and the alloy target, and the composition ratio is the required composition ratio Deviational alloys and single metals blended to adjust to the required composition are used as starting materials, and these are mixed as raw materials. Put any one of aluminum and rare earth elements, aluminum and titanium group elements, or aluminum, rare earth elements, and titanium group elements as starting materials into the melting device for melting, and make aluminum-rare earth element alloy raw materials, Aluminum-titanium group element alloy raw material, or aluminum-rare earth element-titanium group element alloy raw material. It is preferable that the material of the device or container used in the melting device also uses less impurity so that after melting, the impurities will not be mixed into the aluminum-rare earth element alloy raw material, the aluminum-titanium group element alloy raw material, or Aluminum-rare earth element-titanium group element alloy raw materials. As the melting method, select a method that can cope with the following melting temperatures. As the melting temperature, the aluminum-rare-earth element alloy is heated at 1300～1800℃, the aluminum-titanium group element alloy is heated at 1300～1800℃, or the aluminum-rare earth element-titanium alloy is heated at 1300～1800℃. The alloy of group elements is heated. As the atmosphere in the melting device, set a vacuum atmosphere with a vacuum degree of 1×10 ^-2 Pa or less, a nitrogen atmosphere containing hydrogen at 4 vol% or less, or an inert gas atmosphere containing hydrogen at 4 vol% or less. In the case where the aluminum matrix phase is included in the target material, etc., when the aluminum raw material is produced, the aluminum is heated at 700 to 900°C, put into the melting device, and produced in the same manner as other raw materials.

In addition to the three raw material forms described in (1A), (2A), and (3A), the shape of the alloy powder raw materials may also be alloy particles or alloy blocks, or a combination of powder, particles, and blocks. Although powders, granules, and agglomerates show differences in particle size, no matter which one can be used in the powder manufacturing device of the second step, the particle size is not particularly limited. Specifically, in order to melt the raw material in the powder manufacturing apparatus of the second step, there is no particular limitation as long as the size of the raw material can be supplied to the powder manufacturing apparatus.

[Second Step] This step is a step of manufacturing aluminum-rare earth element alloy powder, aluminum-titanium group element alloy powder, or aluminum-rare earth element-titanium group element alloy powder. At least one of the aluminum-rare earth element alloy raw material, the aluminum-titanium group element alloy raw material, or the aluminum-rare earth element-titanium group element alloy raw material produced in the first step is fed into the powder manufacturing device to make After it is melted and made into a melt, gas, water, etc. are blown into the melt to scatter the melt, and the melt is rapidly solidified to produce a powder. It is preferable that the material of the device or the container used in the powder manufacturing device also use a material with less impurities so that after melting, the impurities will not be mixed into the aluminum-rare-earth element alloy powder, the aluminum-titanium group element alloy powder, Or in the alloy powder of aluminum-rare earth element-titanium group element. As the melting method, select a method that can cope with the following melting temperatures. As the melting temperature, the aluminum-rare-earth element alloy raw materials are heated at 1300～1800℃, the aluminum-titanium alloy raw materials are heated at 1300～1800℃, or the aluminum-rare earth elements are heated at 1300～1800℃ -The alloy raw materials of titanium group elements are heated. As the atmosphere in the powder manufacturing equipment, it is carried out in a vacuum atmosphere with a vacuum degree of 1×10 ^-2 Pa or less, a nitrogen atmosphere containing hydrogen of 4 vol% or less, or an inert gas atmosphere containing hydrogen of 4 vol% or less. As the temperature of the molten liquid during blowing, it is preferable to be above the melting point of "aluminum-rare-earth element alloy, aluminum-titanium group element alloy, or aluminum-rare-earth element-titanium group element alloy each +100℃ It is more preferable to perform it at the melting point of each of the alloy of aluminum-rare earth element, the alloy of aluminum-titanium group, or the alloy of aluminum-rare earth element-titanium group +150-250℃. The reason is that if the temperature is too high, the cooling in the granulation is not fully performed, it is difficult to form a powder, and the production efficiency is poor. In addition, if the temperature is too low, the problem of nozzle clogging easily occurs during spraying. The gas used for blowing can be nitrogen, argon, etc., but it is not limited to this. In the case of alloy powders, there are cases in which the precipitation of intermetallic compounds in the alloy powders is suppressed by rapid solidification compared with the melting method, and the precipitation particle size of the island equivalent to the sea-island structure becomes smaller. This state has been obtained in the alloy powder stage, and it will remain in this state even after sintering or when the target is formed. The quenched powder becomes the element ratio of aluminum and rare earth elements, aluminum and titanium group elements, or aluminum, rare earth elements, and titanium group elements prepared in the first step. In the case where the aluminum matrix phase is included in the target, etc., when manufacturing aluminum powder, the aluminum is heated at 700 to 900°C, put into a melting device, and manufactured in the same manner as other powders.

[The third step] This step is a step of obtaining a sintered body that becomes a target from the powder obtained in the second step. As the sintering method, sintering is performed by a hot pressing method (hereinafter also referred to as HP), a spark plasma sintering method (hereinafter also referred to as SPS), or a hot isostatic pressure sintering method (hereinafter also referred to as HIP). The aluminum-rare earth element alloy powder, the aluminum-titanium group element alloy powder, or the aluminum-rare earth element-titanium group element alloy powder obtained in the second step is used for sintering. The powder used in sintering is the following example. (1B) In the case of an aluminum-rare-earth element alloy, use aluminum-rare-earth element alloy powder. (2B) In the case of an alloy of aluminum-titanium group elements, alloy powders of aluminum-titanium group elements are used. (3B) In the case of an alloy of aluminum-rare earth element-titanium group element, for example, use an alloy powder of aluminum-rare earth element-titanium group element, or use an alloy powder of aluminum-rare earth element and aluminum-titanium group A mixed powder of two kinds of alloy powders of elements. It is preferable to fill the mold with any of the powders shown in (1B) to (3B) above, and to sinter the powder after sealing the powder with a mold and a punch with a pre-pressurization of 10-30 MPa. At this time, it is preferable to set the sintering temperature to 700 to 1300°C, and the pressure to be set to 40 to 196 MPa. As the atmosphere in the sintering device, it is carried out in a vacuum atmosphere with a vacuum degree of 1×10 ^-2 Pa or less, a nitrogen atmosphere containing hydrogen of 4 vol% or less, or an inert gas atmosphere containing hydrogen of 4 vol% or less. The hydrogen gas preferably contains 0.1 vol% or more. The retention time (the retention time of the highest temperature of the sintering temperature) is preferably 2 hours or less, more preferably 1 hour or less, and still more preferably no retention time. In the case where the aluminum matrix phase is contained in the target material, etc., when the aluminum powder is mixed with the alloy powder of (1B), (2B) or (3B), it is preferable to set the sintering temperature to 500-600 ℃, otherwise, sintering is carried out under the same conditions.

By going through at least the first step to the third step, the composition deviation of the in-plane direction and the thickness direction of the sputtering target can be suppressed, and the sputtering target can be produced with less content of impurities that will affect the formation of the thin film. Furthermore, it is possible to produce a sputtering target material with a small content of fluorine.

The manufacturing method of the sputtering target of this embodiment also includes the following modified examples. That is, in the first step, it is also possible to produce aluminum raw materials expected to be mainly the parent phase, and (1) rare earth element raw materials and (2) titanium group as raw materials expected to be mainly present in the parent phase or phases. Elemental raw materials, or (3) raw materials containing rare earth elements and titanium group elements. In the second step, the raw materials produced in the above-mentioned first step may be separately made into atomized powders. In the third step, from the raw material obtained in the first step or the powder obtained in the second step, (1) a sintered body of aluminum and rare earth elements, (2) a sintered body of aluminum and titanium group elements, or (3 ) A sintered body of aluminum and rare earth elements-titanium group elements.

In this embodiment, the methods of composition analysis in (Condition 1) and (Condition 2) include energy dispersive X-ray spectroscopy (EDS), high-frequency inductively coupled plasma emission spectroscopy (ICP), fluorescent X For XRF and the like, it is preferable to perform composition analysis using EDS. Example

Hereinafter, examples are shown and the present invention will be described in more detail, but the present invention is not limited to the examples for explanation.

(Example 1) A raw material of Al with a purity of 4N and a Sc raw material with a purity of 3N were put into a powder manufacturing device, and then the inside of the powder manufacturing device was adjusted to a ^{vacuum atmosphere of 5×10 -3} Pa or less to a melting temperature of 1700°C The Al raw material and the Sc raw material are melted to become a molten liquid. Next, argon gas is blown into the molten liquid to scatter the molten liquid and rapidly solidify to produce Al-40 atomic% Sc powder with a particle size of 150 μm or less (in this case) When, Al is 60 atomic% Al, but the description of the atomic percentage of Al is omitted; the same applies hereinafter). After that, the Al-40 atomic% Sc powder was filled in a carbon mold for spark plasma sintering (hereinafter, also referred to as SPS sintering). Next, by pre-pressing 10 MPa, the mixed powder is sealed with a mold and punch, etc., and the mold filled with the mixed powder is set in the SPS device (model: SPS-825, manufactured by SPS SINTEX). Moreover, as the sintering conditions, the sintering temperature is 550°C, the pressure is 30 MPa, the atmosphere in the sintering device is a ^{vacuum atmosphere of 8×10 -3} Pa or less, and the holding time of the highest temperature of the sintering temperature is 0 hours. Sintering is carried out under these conditions. The Al-40 atomic% Sc sintered body is processed using a grinding machine, a lathe, etc., to produce an Al-40 atomic% Sc target of Φ50.8 mm×5 mmt of Example 1. Next, use an electron microscope to observe the cross section of the Al-40 atomic% Sc target at a magnification of 500 times. The observed electron microscope image is shown in Figure 7. The length of the horizontal side of the image in Figure 7 is 250 μm. As a result of Fig. 7, it was confirmed that the contrast was small, the intermetallic compound was relatively fine, and the dispersion was uniform. In addition, the result of the electron microscope image in FIG. 7 is that the target material contains _{two intermetallic compounds of Al 2} Sc and AlSc, and has a first structure. Next, using a mass analyzer (model: Element GD, manufactured by Thermo Fisher Scientific), the fluorine content of the Al-40 atomic% Sc target of Example 1 was measured. The fluorine content is 5.5 ppm. Next, using a sputtering device (model MPS-6000-C4, manufactured by ULVAC), using the Al-40 atomic% Sc target of Example 1 to form a film on a Φ76.2 mm×5 mmt single crystal Si substrate . The film formation conditions are as follows: evacuate the sputtering device. After the ultimate vacuum before film formation reaches 5×10 ^-5 Pa or less, use argon to adjust the pressure in the sputtering device to 0.13 Pa. After that, while heating the single crystal Si substrate to 300°C, while adjusting the sputtering power of the Al-40 atomic% Sc target to 150 W, form Al-40 atomic% Sc with a thickness of 1 μm on the single crystal Si substrate membrane. At this time, the sputtering condition of the Al-40 atomic% Sc target was observed, the voltage was stable, no abnormal discharge, etc. were confirmed, and the film formation was realized.

(Example 2) In Example 1, Al-30 atomic% Sc powder with a particle size of 150 μm or less was produced instead of Al-40 atomic% Sc powder to produce Φ50.8 mm×5 mmt Al-30 atomic% The Sc target material replaced the Al-40 atomic% Sc target material of Example 1, except for this, the Al-30 atomic% Sc target material of Example 2 was obtained in the same manner. Next, in the same manner as in Example 1, the fluorine content of the Al-30 at% Sc target of Example 2 was measured. The fluorine content is 22 ppm. The target contains _{two intermetallic compounds, Al 2} Sc and AlSc, and has a first structure. Next, the Al-30 atomic% Sc target of Example 2 was used instead of the Al-40 atomic% Sc target of Example 1. Except for this, the single crystal Si substrate was used in the same manner as in Example 1. An Al-30 atomic% Sc film is formed with a thickness of 1 μm. At this time, the sputtering condition of the Al-30 atomic %Sc target was observed, the voltage was stable, no abnormal discharge, etc. were confirmed, and the film formation was realized.

(Example 3) In Example 1, an Al raw material with a purity of 4N and a Ti raw material with a purity of 3N were used instead of the Al raw material with a purity of 4N and a Sc raw material with a purity of 3N. Al-40 atomic% Ti powder below μm. Next, a Φ50.8 mm×5 mmt Al-40 atomic% Ti target was produced instead of the Al-40 atomic% Sc target of Example 1. Except for this, the Example was obtained in the same manner as in Example 1. 3 of Al-40 atomic% Ti target. Next, in the same manner as in Example 1, the fluorine content of the Al-40 at% Ti target of Example 3 was measured. The fluorine content is 14 ppm. The target material contains _{two intermetallic compounds, Al 2} Ti and AlTi, and has a first structure. Next, the Al-40 atomic% Ti target of Example 3 was used instead of the Al-40 atomic% Sc target of Example 1. Except for this, the single crystal Si substrate was applied in the same manner as in Example 1. An Al-40 atomic% Ti film is formed with a thickness of 1 μm. At this time, the sputtering condition of the Al-40 at% Ti target was observed, the voltage was stable, no abnormal discharge, etc. were confirmed, and the film formation was realized.

(Comparative Example 1) After using pure Al powder with a particle size of 150 μm or less and a purity of 3N and Sc powder with a particle size of 150 μm or less and a purity of 2N, the amount of each powder was adjusted to become Al-40 at% Sc, Mix it. After that, the Al-40 atomic% Sc mixed powder is filled into the carbon mold for SPS sintering. Next, by pre-pressing 10 MPa, the mixed powder is sealed with a mold and punch, etc., and the mold filled with the mixed powder is set in the SPS device (model: SPS-825, manufactured by SPS SINTEX). Moreover, as the sintering conditions, the sintering temperature is 550°C, the pressure is 30 MPa, the atmosphere in the sintering device is a ^{vacuum atmosphere of 8×10 -3} Pa or less, and the holding time of the highest temperature of the sintering temperature is 0 hours. Sintering is carried out under these conditions. The sintered Al-40at%Sc sintered body is processed using a grinding machine, a lathe, etc., to produce an Al-40at%Sc target of Φ50.8 mm×5 mmt of Comparative Example 1. Next, the fluorine content of the Al-40 atomic% Sc target of Comparative Example 1 was measured in the same manner as in Example 1. The fluorine content is 130 ppm. The target contains _{two intermetallic compounds, Al 2} Sc and AlSc, and has a first structure. Next, the Al-40 atomic% Sc target of Comparative Example 1 was used instead of the Al-40 atomic% Sc target of Example 1. Except for this, the single crystal Si substrate was used in the same manner as in Example 1. An Al-40 atomic% Sc film is formed with a thickness of 1 μm. At this time, the sputtering condition of the Al-40 atomic% Sc target of Comparative Example 1 was observed, and the voltage was unstable, and abnormal discharge was confirmed. As a cause of abnormal discharge compared with Example 1, it is considered that fluorine in the sputtering target is released by heating during film formation.

(Comparative Example 2) In Comparative Example 1, the amount of each powder was adjusted so that Al-30 atomic% Sc was replaced by Al-40 atomic% Sc. Other than that, the Φ50.8 of Comparative Example 2 was produced in the same manner. The Al-30 atomic% Sc target of mm×5 mmt replaces the Al-40 atomic% Sc target of Comparative Example 1. Next, the fluorine content of the Al-30 atomic% Sc target of Comparative Example 2 was measured in the same manner as in Example 1. The fluorine content is 180 ppm. The target contains _{two intermetallic compounds, Al 2} Sc and AlSc, and has a first structure. Next, the Al-30 atomic% Sc target of Comparative Example 2 was used instead of the Al-40 atomic% Sc target of Example 1. Except for this, the single crystal Si substrate was applied in the same manner as in Example 1. An Al-30 atomic% Sc film is formed with a thickness of 1 μm. At this time, the sputtering condition of the Al-30 atomic% Sc target of Comparative Example 2 was observed, and the voltage was unstable, and abnormal discharge was confirmed. As a cause of abnormal discharge compared with Example 2, it is considered that fluorine in the sputtering target is released by heating during film formation.

(Comparative Example 3) In Comparative Example 1, pure Al powder with a particle size of 150 μm or less and a purity of 3N and a Ti powder with a particle size of 150 μm or less and a purity of 2N were used to adjust each to become Al-40 atomic% Ti. Instead of using pure Al powder with a particle size of 150 μm or less and a purity of 3N, and Sc powder with a particle size of 150 μm or less and a purity of 2N, adjust the amount of each powder to become Al-40 atomic% Sc. Otherwise, the Φ50.8 mm×5 mmt Al-40 atomic% Ti target of Comparative Example 3 was produced in the same manner. Next, the fluorine content of the Al-40 at% Ti target of Comparative Example 3 was measured in the same manner as in Example 1. The fluorine content is 190 ppm. The target material contains _{two intermetallic compounds, Al 2} Ti and AlTi, and has a first structure. Next, the Al-40 atomic% Ti target of Comparative Example 3 was used instead of the Al-40 atomic% Sc target of Example 1. Except for this, the single crystal Si substrate was applied in the same manner as in Example 1. An Al-40 atomic% Ti film is formed with a thickness of 1 μm. At this time, the sputtering condition of the Al-40 atomic% Ti target of Comparative Example 3 was observed, and the voltage was unstable, and abnormal discharge was confirmed. As a cause of abnormal discharge compared with Example 3, it is considered that fluorine in the sputtering target is released by heating during film formation.

(Comparative Example 4) The Al raw material with a purity of 4N and Sc raw material with a purity of 3N are weighed so as to become Al-40 atomic% Sc, and melted using an arc melting device (AME-300 type manufactured by ULVAC) to obtain a size of 60 mm square × 6 mm. The board after melting. Next, an attempt was made to machine the plate to produce a sputtering target of Φ50.8 mm×5 mmt. However, in the grinding process, a gap was formed on the outer periphery of the plate. In the cutting process by wire electrical discharge machining, the plate Cracks occurred, and the sputtering target could not be produced. In order to confirm the cause of the cracks, an electron microscope was used to observe the cross section of the Al-40 atomic% Sc target at a magnification of 500 times. The observed electron microscope image is shown in Figure 8. The length of the horizontal side of the image in Figure 8 is 250 μm. The result of Fig. 8 is that the discontinuous surface at the upper end is the target processing surface, but cracks are confirmed in the interior of the intermetallic compound. Therefore, it is considered that cracks are likely to occur starting from the coarsened intermetallic compound particles, and the workability is deteriorated.

In Table 1, with respect to Examples 1 to 3 and Comparative Examples 1 to 3, the types of elements added to Al, the amount of added elements, and the fluorine content are shown. By comparing Example 1 and Comparative Example 1, Example 2 and Comparative Example 2, Example 3 and Comparative Example 3, it can be seen that, as described above, even if the types and amounts of elements added to Al are the same, as long as the content of fluorine is the same If the value is not specified (100 ppm or less), abnormal discharge may also occur during film formation.

In Comparative Example 4, since only the melting method was used to produce the plate, the obtained plate had a coarsened structure of the intermetallic compound. Therefore, it is believed that the intermetallic compound becomes brittle, and the brittle intermetallic compound is used as a starting point to produce nicks or cracks during processing. In contrast, in Example 1, the granulation is performed by melting and rapid solidification to suppress the coarsening of the intermetallic compound. After that, the sputtering target is produced through the sintering process. Therefore, the fineness The organization is maintained, the gaps or cracks are contained, and the workability is improved. In the sputtering target material of Example 1, by maintaining a fine structure, the composition deviation caused by different positions in the target material is small. In order to confirm the composition deviation, the composition of the sputtering target in the sputtering plane direction and the target thickness direction in (Condition 1) was confirmed. The composition is measured using EDS (energy dispersive spectrometer) (manufactured by JEOL). As a result, the difference from the standard composition was all within ±1%, and it was confirmed that the composition deviation was small. On the other hand, in Comparative Example 4, it can be seen that there is a portion where the difference from the composition used as the reference does not fall within ±3% depending on the measurement site. Compared with Example 1, the composition deviation is large.

[Table 1] Add element Addition amount (atom%) Fluorine content (ppm) Example 1 Sc 40 5.5 Example 2 Sc 30 twenty two Example 3 Ti 40 14 Comparative example 1 Sc 40 130 Comparative example 2 Sc 30 180 Comparative example 3 Ti 40 190

In Example 1, a mass analyzer (model: Element GD, manufactured by Thermo Fisher Scientific) was used to determine the chlorine content. The chlorine content is 5.6 ppm. In addition, in Comparative Example 1, the content of chlorine was measured in the same manner. The chlorine content is 146 ppm.

In Example 1, a mass analyzer (model: ON836, manufactured by LECO) was used to measure the oxygen content. The oxygen content is 424 ppm. In addition, in Comparative Example 1, the oxygen content was measured in the same manner. The oxygen content is 2993 ppm.

(Example 4) Pure Al powder with a particle size of 150 μm or less and a purity of 4N and ScN powder with a particle size of 150 μm or less and a purity of 3N were used to adjust the amount of each powder to become Al-10 mol% ScN. mixing. After that, the Al-10 mol% ScN mixed powder is filled into the carbon mold for spark plasma sintering (hereinafter, also referred to as SPS sintering). Next, by pre-pressing 10 MPa, the mixed powder is sealed with a mold and punch, etc., and the mold filled with the mixed powder is set in the SPS device (model: SPS-825, manufactured by SPS SINTEX). Moreover, as the sintering conditions, the sintering temperature is 550°C, the pressure is 30 MPa, the atmosphere in the sintering device is a ^{vacuum atmosphere of 8×10 -3} Pa or less, and the holding time of the highest temperature of the sintering temperature is 0 hours. Sintering is carried out under these conditions. Use a grinding machine, lathe, etc. to process the sintered Al-10 mol% ScN sintered body to produce a Φ50 mm×6 mmt Al-10 mol% ScN target. When producing the target material, the workability is good, and it can be formed into the shape of the target material. Use a microscope to observe the surface of the produced target. The observed image is shown in Figure 9. The length of the horizontal side of the image in Figure 9 is 650 μm. It is confirmed from Fig. 9 that Al accounts for the majority of ScN, and it is considered that the aluminum matrix phase is present due to the presence of connected Al. As a result, it is considered that the workability at the time of target production was obtained. At this time, the target material contains two phases of Al and ScN, and has a fifth structure-2.

Next, a mass analyzer (model: Element GD, manufactured by Thermo Fisher Scientific) was used to determine the fluorine content of the Al-10 mol% ScN target of Example 4. The fluorine content is 4.1 ppm.

Next, using a sputtering device (model MPS-6000-C4, manufactured by ULVAC), using the Al-10 mol% ScN target of Example 4, a film was formed on a Φ76.2 mm×5 mmt single crystal Si substrate . The film formation conditions are as follows: evacuate the sputtering device. After the ultimate vacuum before film formation reaches 5×10 ^-5 Pa or less, use argon to adjust the pressure in the sputtering device to 0.13 Pa. After that, while heating the single crystal Si substrate to 300°C, while adjusting the sputtering power of the Al-10 mol% ScN target to 150 W, form Al-10 mol% ScN with a thickness of 1 μm on the single crystal Si substrate membrane. At this time, the sputtering condition of the Al-10 mol% ScN target was observed, the voltage was stable, no abnormal discharge, etc. were confirmed, and the film formation was realized.

1: Al-RE alloy particles 2: Al-RE alloy grains 2a: Al-RE alloy grains 2b: Al-RE alloy grains 3: Al matrix 4: Aluminum grains 4a: Aluminum grains 4b: Aluminum grains 100: Sputtering target 200: Sputtering target 300: Sputtering target 400: Sputtering target C1～C9: Measuring part of cross section D1～D9: Measuring part of cross section J: length K: Circumference L: imaginary cross L1: Longitudinal length L2: horizontal length O: Center P1～P9: Measuring part of sputtering surface Q: Imaginary cross hair r: radius S1～S9: Measuring part of sputtering surface t: the thickness of the target X: Center

Fig. 1 is a schematic view showing the measurement location of the composition analysis in the sputtering surface direction of the disc-shaped target material. Fig. 2 is a schematic view showing the measurement location of the disc-shaped target shown in the B-B cross-section in the thickness direction of the target material. Fig. 3 is a schematic diagram showing the measurement location of the composition analysis in the sputtering surface direction of the square plate-shaped target material. Fig. 4 is a schematic diagram showing the measurement location of the composition analysis in the thickness direction of the square plate-shaped target shown in the C-C cross section. Figure 5 is a conceptual diagram for explaining the measurement location of the cylindrical target material for composition analysis. Fig. 6 is an explanatory diagram for explaining the concept of aluminum matrix phase. Fig. 7 is an image when the surface of the Al-Sc target in Example 1 is observed with an electron microscope. Fig. 8 is an image when the surface of the Al-Sc target in Comparative Example 4 is observed with an electron microscope. Figure 9 is an image of the surface of the Al-ScN target in Example 4 when observed with a microscope.

200: Sputtering target

L: imaginary cross

O: Center

r: radius

S1~S9: Measuring part of sputtering surface

Claims (9)

A sputtering target, characterized in that it contains aluminum and further contains any one or two of rare earth elements and titanium group elements, and The fluorine content is below 100 ppm. Such as the sputtering target of claim 1, in which the content of chlorine is 100 ppm or less. Such as the sputtering target of claim 1 or 2, in which the oxygen content is less than 500 ppm. The sputtering target material according to any one of claims 1 to 3, wherein an intermetallic compound containing at least two elements selected from aluminum, rare earth elements, and titanium group elements is present in the sputtering target material. According to the sputtering target of claim 4, there are one, two, three, or four kinds of the above-mentioned intermetallic compounds in the above-mentioned sputtering target. The sputtering target material according to any one of claims 1 to 5, wherein at least one nitride of at least one element selected from aluminum, rare earth elements, and titanium group elements is present in the sputtering target material. The sputtering target material according to any one of claims 1 to 6, wherein the rare earth element is at least any one of scandium and yttrium. The sputtering target material according to any one of claims 1 to 7, wherein the above-mentioned titanium group element is at least any one of titanium, zirconium and hafnium. Such as the sputtering target material of any one of claims 1 to 8, which has a structure in which at least one of the following materials is present in the aluminum parent phase, that is, materials containing aluminum and rare earth elements, and aluminum and titanium Elemental materials, and materials containing aluminum, rare earth elements and titanium group elements; or A structure composed of a composite phase that contains at least one or two of the following phases in the aluminum matrix phase, that is, a phase that contains only rare earth elements and inevitable impurities as metal species, and contains only the titanium group Elements and unavoidable impurities serve as the phase of metal species.

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