TW202107674A - Micro-led and micro-led manufacturing method - Google Patents

Abstract

Embodiments of the present disclosure generally relate to micro-LEDs and to methods of forming micro-LEDs. In an embodiment is provided a method of processing a substrate that includes masking GaN-based blue micro-LEDs, GaN-based green micro-LEDs, or a combination thereof disposed on a silicon substrate disposed in a processing system, and forming a plurality of AlInGaP-based red micro-LEDs on the silicon substrate. In another embodiment is provided a device that includes a silicon substrate, a plurality of GaN-based blue micro-LEDs disposed on the silicon substrate, a plurality of GaN-based green micro-LEDs disposed on the silicon substrate, and a plurality of AlInGaP-based red micro-LEDs disposed on the silicon substrate. In another embodiment is provided a non-transitory computer medium storing instructions that, when executed by a processor of a system, perform operations to form micro-LEDs is also disclosed.

Description

Micro LED and micro LED manufacturing method

The embodiments of the present disclosure generally relate to micro LEDs and methods of forming micro LEDs. In particular, a method for manufacturing red micro LEDs on the same substrate (such as a silicon wafer) with pre-existing blue micro LEDs and/or green micro LEDs is disclosed.

Micro LEDs (light emitting diodes) are being considered for use in next-generation display devices. In order to achieve a complete color display, traditional micro LED pixels try to use red, green and blue micro LEDs. Blue and green micro LEDs are usually composed of a stack of layers based on hexagonal (wurtzite) gallium nitride (GaN), where the active emitter layer combines different concentrations of indium (InGaN) to adjust the color. The layer stack is either grown into a blanket film, which is then patterned and etched into a micron-sized structure, or selectively grown into a micron structure in a predetermined area of openings between the dielectric layers. Due to the lattice match between sapphire and hexagonal gallium nitride, these micro LEDs are usually formed on sapphire.

The size of the sapphire substrate is generally limited (typically four inches or less in diameter), and therefore, there are challenges in scaling up to produce sufficient micro LEDs for mass production of large screen display devices. Although some development work for micro-LEDs on more abundant and larger silicon substrates is underway, such as the use of hexagonal (wurtzite) GaN and cubic (zinc total) on <111> and <100> silicon wafers. For the selective growth of various structures of the GaN crystal phase, the attempts so far have not been enough. In addition, although blue and green micro LEDs are usually GaN-based materials, in addition to the lattice mismatch between the GaN emitter with high indium content and the underlying GaN/sapphire or GaN/Si, GaN-based red Due to various technical reasons, micro LEDs have poor performance. InGaP-based red micro LEDs grown on GaAs substrates have higher efficiency and are more common. Therefore, in order to form red, green and blue pixels, micro LEDs from multiple substrates are used. The micro LEDs from different substrates are cut into small pieces and positioned (usually referred to as a "pick and place" operation) on a suitable main substrate, such as the substrate that will eventually become a display device. The "pick and place" of thousands of micro LEDs is tedious, time-consuming, expensive, and has its own technical limitations.

Therefore, there is a need for improved micro LEDs and micro LED manufacturing methods in this field.

The embodiments of the present disclosure generally relate to micro LEDs and methods of forming micro LEDs. In particular, a method for manufacturing red micro LEDs on the same substrate (such as a silicon wafer) with pre-existing blue micro LEDs and/or green micro LEDs is disclosed.

In one embodiment, a method for processing a substrate is provided, the method includes the following steps: covering a GaN-based blue micro LED, a GaN-based green micro LED or a combination thereof that is provided on a silicon substrate in a processing system. The method further includes the following steps: forming a plurality of AlInGaP-based red micro LEDs on the silicon substrate.

In another embodiment, a device is provided, which includes: a silicon substrate; a plurality of GaN-based blue micro LEDs arranged on the silicon substrate; a plurality of GaN-based green micro LEDs arranged on the silicon substrate; and A plurality of AlInGaP-based red micro LEDs on a silicon substrate.

In another embodiment, a non-transitory computer-readable medium for storing instructions is provided, which operates when the instructions are executed by the processor of the system, and the operations include: forming a plurality of GaN-based blue micro LEDs on a silicon substrate; A plurality of GaN-based green micro LEDs are formed on a silicon substrate; a plurality of GaN-based blue micro LEDs and a plurality of GaN-based green micro LEDs masked on the silicon substrate; and a plurality of AlInGaP-based red micro LEDs are formed on the silicon substrate .

The embodiments of the present disclosure generally relate to micro LEDs and methods of forming micro LEDs. In particular, a method for manufacturing AlInGaP-based red micro LEDs on the same substrate (such as a silicon wafer) with pre-existing GaN-based blue micro LEDs and/or green micro LEDs is disclosed.

FIG. 1 is a flowchart of a method 100 for forming a micro LED on a substrate according to at least one embodiment. In operation 102, a gallium nitride (GaN) layer is deposited on the <111> surface of the silicon substrate. Metal organic chemical vapor deposition (MOCVD) can be used as the deposition method, but hydride vapor phase epitaxy (HVPE) or a lower temperature method such as molecular beam epitaxy (MBE) can also be used. In contrast to the <100> silicon surface, the crystal lattice of GaN is sufficiently similar to the <111> silicon surface to allow a high-quality GaN layer to be formed thereon. In an example of operation 102, the deposition of GaN is blanket deposition on the surface of a <111> silicon wafer, the thickness of which has a range of about 500 nanometers to about 10 micrometers, such as about 1 micrometer to about 5 micrometers, Or about 2 microns to about 4 microns. One or more AlN and/or AlGaN transition layers are used between the silicon surface and GaN to facilitate device formation. In such an example, the AlN layer may be deposited to a thickness of about 100 nanometers (nm) to about 200 nm. The AlGaN layer can be deposited to a thickness of about 200 nm to about 800 nm.

As shown in Figure 2, a <100> silicon substrate 200 (eg, having a <100> exposed upper surface 220) can be used. Before the GaN deposition in operation 102, the upper surface 220 exposed by the <100> may be processed first by, for example, using a homoepitaxial growth process to generate a <111> surface 222. The <111> surface 222 may be formed from the upper surface 220 exposed from the <100> by forming a faceted surface. The <111> surface 222 facilitates the deposition of GaN in a predetermined crystallographic orientation.

In order to create the <111> surface 222, a mask 253 (such as silicon oxide or other oxides) is provided on the upper surface 220 of the silicon substrate 200. Crystalline silicon 260 is epitaxially formed on the exposed area of the upper surface 220 of the silicon substrate 200 exposed by <100> to a height H ₁ , and the height H ₁ exceeds the height H _{2 of the} mask, resulting in the formation of crystalline silicon 260 (eg, facet The <111> surface 222 (for example, the faceted surface) of the epitaxial silicon feature) exists above the mask 253. The <111> surface 222 can be, for example, a silicon pyramid, a pointed band or other similar features. The <111> surface 222 is grown by, for example, selective epitaxial deposition at a temperature of about 800 degrees Celsius or higher. The <111> surface 222 has a <111> crystallographic orientation, which facilitates the growth of c-plane wurtzite GaN on it (eg, GAN layer or structure 262). In an example of operation 102, GaN is selectively formed on the <111> surface 222 to a thickness of about 200 nanometers to about 1000 nanometers, such as a thickness of 400 nanometers to about 800 nanometers. Before GaN deposition on the <111> surface 222, AlN and AlGaN transition layers can be similarly used.

In another example of operation 102, the crystalline silicon 260 formed as described above has a height H ₁ . The height H _{1 is} approximately equal to the height of the GaAs feature formed during the subsequent operation 112 in FIG. 1. In another example of operation 102, wherein the height H of the crystal silicon mask 253 above the upper surface 260 is from about ₁ 40nm to 400nm. In another example of operation 102, before the peaks or vertices are formed between the <111> surfaces 222, the epitaxial formation of the <111> surfaces 222 may be stopped to reduce GaN bridging. Additionally or alternatively, it is conceivable that before forming GaN, for example, by chemical mechanical polishing, the silicon can be polished off any peaks formed.

In another example of operation 102, a GaN layer or structure 262 in the form of a vertical rod is grown on the upper surface 220 (which may be a <111> surface) of the silicon substrate 200. The GaN layer or structure 262 is formed by depositing a mask (such as a silicon oxide mask) on the silicon substrate 200 and patterning the mask 253 to expose a predetermined area of the silicon substrate 200 for selectively growing rods. A deposition process (such as MOCVD) is then used to form the rods in the openings of the mask 253, and is assisted by a nucleation layer (such as AlN), which has a thickness of about 2 nm to about 50 nm. The diameter of the rod may be from several hundred nanometers to several thousand nanometers, such as about 300 nm or about 3000 nm, and the height may be about three to about eight times the diameter of each corresponding rod. Figure 3A depicts an example of the resulting GaN rod structure (such as blue and green micro LED 350).

Once the GaN layer or structure 262 is formed at operation 102, the GaN layer or structure 262 is then further processed in operation 104 to form corresponding regions for the green micro LED and the blue micro LED. Such a region can be formed by applying a suitable active emitter layer thereon, for example, by forming a multiple quantum well (MQW) with alternating layers of indium gallium nitride (InGaN) and GaN, each layer is about 2 -4nm thick. The indium concentration of the InGaN layer is selected to provide the desired color output (eg, green) of the micro LED. MQWs with higher indium concentrations emit longer wavelengths. For example, green requires a higher indium concentration than blue. It should be noted that the bulk GaN layer below the MQW is doped n-type or p-type, and the counter-doped GaN layer or structure 262 above the MQW is also utilized to form a diode. The counter-doped GaN layer and other layer details that can be designed to enhance the performance of the micro-LED (such as a stress relief layer, an electron blocking layer, a cladding layer, etc.) may also be included in the vicinity of the MQW formation in operation 104. Metal contacts are also applied to the doped layer to complete the micro LED, but in this method, the metal contacts are applied after all operations covered in Figure 1 are completed (eg, after operation 114).

In an example of operation 104, blanket deposition of MQW on top of the doped blanket GaN from operation 102 can target a specific indium concentration of the InGaN layer, followed by masking and etching to produce micron-sized The area is used for micro LEDs with one color (either blue or green, not two). In other words, the MQWs for the blue and green micro LEDs are formed separately. However, it is conceivable that, in another example of operation 104, before the above-mentioned operation for forming the micro LED of the first color (eg, blue), silicon oxide may be used to cover the different contrasts allocated to other colors on the blanket GaN. Large area. Wet etching and exposing those allocated (eg, masked) areas then allows subsequent formation of second color (eg, green) micro LEDs therein. This is accomplished by depositing and patterning a higher indium-containing MQW in a similar manner to the above, while covering the already constructed micro LEDs of the first color (eg, blue).

The mask and wet etching process are selected to minimize or avoid damage to the previously formed micro LEDs. If a typical MOCVD or HVPE high temperature (>about 800°C) process is used for the active layer of the green micro LED, the existing active emitter layer of the blue micro LED will also be damaged. This can be avoided by using a low-temperature nitrogen source (such as hydrazine, or _{plasma activation of either N 2} or NH ₃ ) to deposit below 700 degrees Celsius (such as 650 degrees Celsius). _{In one example, plasma activated N 2} or NH ₃ is utilized at a pressure of less than about 10 Torr, such as less than about 5 Torr or less than about 3 Torr. Hydrazine (in the absence of plasma) can be used at a pressure of less than about 400 torr, such as less than about 300 torr. It is conceivable that etching to form a micron-sized area may damage the active emitter layer at the edge of the shape, resulting in lower light output efficiency. After completing all the operations covered in Figure 1, a passivation layer can optionally be applied in some subsequent operations to reduce possible damage caused by etching.

In another example of operation 104, blanket deposition may be used to form blue and green micro LEDs. The blanket GaN formed on the substrate in operation 102 is patterned to form a first region of micron-sized GaN corresponding to the position for forming the blue micro LED and a position corresponding to the position for forming the green micro LED. Corresponding to the second region of micron-sized GaN. Then, while covering the second position, an MQW with an indium concentration for blue is formed at the first position, and then an MQW with a higher indium concentration for green is formed at the second position while covering the first position. . Again, a low-temperature nitrogen source can be used in the second location to obtain a predetermined thermal budget. The micron-sized regions patterned from the blanket layer to form micro LEDs in this example or previous examples (eg, patterned before or after the growth of MQW and doped GaN) can have any shape, such as a disc , Square or rectangle. The size of the shape may be in the range of less than about micrometers to several micrometers, such as from about 0.8 um to about 8 um, although other sizes can also be considered.

Alternatively, and in another example of operation 104, it is conceivable that the pattern dependence in MOCVD (also referred to as microloading) can be used to simultaneously operate in the first position and the second position without a mask. Form MQW. In such an example, the first position (for example, the position of each micro LED of the first color) is spaced closer to each other than the second position (for example, the position of each micro LED of the second color), which results in the formation of In the meantime, a lower concentration of indium is doped into the MQW at the first position. A lower indium concentration results in blue emission, while a relatively higher concentration results in green emission. The first locations may be spaced apart from about 0.2 microns to about 1.2 microns (eg, about 1.2 microns pitch), and the second locations may be spaced apart from about 1 micron to about 2 microns, such as about 1.6 microns. This spacing results in that the indium concentration in the MQW of the blue micro LED is about 15 atomic percent InGaN, and the indium concentration in the MQW of the green micro LED is about 25 atomic percent InGaN.

In yet another example of operation 104, using the GaN on the faceted silicon structure as previously described with respect to operation 102, the respective regions of the green micro LED and the blue micro LED are in the same MQW by using the MOCVD micro-loading phenomenon. Simultaneous development during deposition. That is, the region created in operation 102 with a lower structure area density will have a higher indium concentration (longer wavelength emission, such as green) than other areas with a higher structure area density in operation 104 The active emitter layer. When using the example of the GaN rod structure from operation 102, such results can be obtained at operation 104 similarly.

Returning to the method 100, at operation 106, once the active layers (including MQW and doped GaN) for the green and blue micro LEDs are formed in the desired pattern, a mask (such as silicon oxide) is placed on the substrate Above. Figure 3A schematically shows a substrate 352 with blue or green or two micro LEDs 350 thereon (completed after operation 104 of Figure 1). Although as an example, FIG. 3A depicts a rod GaN structure for micro LEDs (such as blue and green micro LEDs 350), other structures for operation 104 may be used. Figures 3B-3E schematically show example structures associated with operations 106-114 of Figure 1. In an example of operation 106, the mask 353 shown in Figure 3B may partially include a pre-existing mask that has been deposited over the blue micro LED at operation 104, or alternatively, the existing mask may be removed. A mask above the blue micro LED, and the new mask can be placed above the substrate and then patterned to expose a predetermined area for forming the red micro LED. In another example of operation 106, the mask 353 is formed of silicon oxide. The presence of the mask 353 protects the blue and green micro LEDs 350 during the formation of the red micro LEDs during subsequent processing.

In operation 108, the mask 353 is patterned corresponding to the predetermined formation area of the red micro LED. These areas may have, for example, the shape of square or rectangular stripes. As shown in FIG. 3B, a photoresist 354 is applied over the mask 353 to facilitate photolithography patterning. The mask 353 is removed with a fluorine-based wet or dry etchant (such as HF, CF ₄ or NF ₃ ) to expose the substrate surface 351 at the bottom of the well or opening 355 (eg, trench opening) in the mask 353 The part, as shown in Figure 3C. The completion of operation 108 results in the formation of a plurality of openings 355.

In operation 110, the substrate surface 351 is cleaned by exposure to a wet or dry etchant. In an example of operation 110, the blue and green micro LEDs 350 were formed earlier on the substrate 352 with the <111> orientation, and the exposed area of the substrate surface 351 depicted in Figure 3C has been used for gallium arsenide ( GaAs) the desired crystallographic orientation. In another example of operation 110, the blue and green micro LEDs 350 are formed earlier on the substrate 352 having the <100> orientation, and the exposed area of the substrate surface 351 is first subjected to (etching is performed in operation 110 to clean the substrate 352). Previously) an etching process (such as wet etching using tetramethylammonium hydroxide or _{dry etching using Cl 2} ) to form V-shaped facets 356 into the substrate surface 351 as shown in FIG. 3D. The resulting or V-shaped facet 356 has a <111> crystallographic orientation, which helps to form the GaAs material 358 within the opening 355 in the mask 353. The cleaning of the substrate surface 351 is performed at a low temperature, which meets the predetermined thermal budget. The application material SiCoNi ^TM dry cleaning is an example of various aspects that can be used in this disclosure.

In operation 112, a GaAs material 358 is formed on the exposed, etched, and/or cleaned surface of the substrate (eg, the substrate surface 351 having a <111> orientation or the V-shaped facet 356 of the substrate 352). GaAs material 358 uses gallium-containing precursor gases, arsenic-containing precursor gases, or combinations thereof (including trimethylgallium, triethylgallium, arsenic) during chemical vapor deposition (such as metal organic chemical vapor deposition). Hydrogen and tert-butyl arsine) selective growth. Using the <111> crystallographic orientation of the exposed area below the substrate surface 351 as an epitaxial template, a GaAs material 358 is formed vertically upward in the opening 355 in the mask 353. Since the height of the GaAs material 358 exceeds the height of the features of the mask 353 during the deposition process, it is expected that the shape and width of the GaAs material 358 may change. When the height of the GaAs material 358 exceeds the height of the mask 353, facet formation may occur. In an example of operation 112, the GaAs material 358 may taper outwardly at the surface 357, so that the width of the GaAs material 358 formed in each corresponding mask 353 feature is greater than that above the upper surface of the mask 353 The width of the corresponding opening 355 in the mask 353 at the height of the greater width. This formation may be affected by the crystallographic tendency of the GaAs material 358 during formation as promoted by the deposition conditions (including temperature, growth precursor flow rate, and growth rate).

In another example of operation 112, the width of the base portion (and opening 355) of the GaAs material 358 is in the range of about 100 nanometers to about 1,000 nanometers. Depending on at least the predetermined height, the opening 355, and/or the selected growth conditions, the width of the GaAs material 358 above the mask 353 can be grown to about 200 nm to about 2000 nm. During the growth of the GaAs material 358, the processing temperature may be maintained at less than 650°C (such as 600°C) to avoid damage to the previously developed GaN blue and/or green micro LED 350.

Once the GaAs material 358 is deposited to a predetermined height, at operation 114, an MQW 359 is formed on the upper surface of the GaAs, as shown in FIG. 3D. The MQW 359 for the red micro LED is formed of alternating layers of aluminum indium gallium phosphide (AlInGaP) and indium gallium phosphide (InGaP), which are formed via, for example, MOCVD at a temperature of about 650 degrees Celsius or lower. Each corresponding opening 355 formed in the patterning of operation 108 includes a GaAs material 358 feature with MQW 359 formed thereon, resulting in a plurality of red micro LEDs.

Subsequently, the mask 353 formed over the blue and green micro LEDs 350 is removed, and further processing can be performed. For example, contacts can be applied to micro LEDs. Additionally or alternatively, the substrate may be cut into units, where each unit includes red, green, blue (RGB) micro LEDs. In the latter example, the masking and deposition operations described above are selected to place the respective red, green, and blue micro LEDs next to each other to facilitate cutting into RGB units (eg, RGB pixels). In yet another example, cutting may be omitted, and the substrate with the RGB micro LEDs thereon is directly bonded to the substrate with the predetermined CMOS layout formed thereon. In such an example, the RGB micro LED layout is selected to correspond to the predetermined CMOS layout. Because cutting and pick-and-place operations are omitted in such an example, the yield is increased and the manufacturing cost is reduced.

Figure 3E shows a plan view of the area on the substrate 352 (eg, silicon substrate). The area 360 includes blue micro LEDs, the area 361 includes green micro LEDs, and the area 362 includes red micro LEDs, all of which are formed on a single substrate 352. Although the substrate 352 is shown as having a plurality of micro LEDs of each color (RGB) grouped together, any number of micro LEDs of each color can be designed as an area, depending on (eg) each emitting GaN and GaAs micro The size of the structure, the light output or intensity of each color and/or the size of the area to be filled. In one example, the designated area includes a circular blue micro LED structure, a circular green micro LED structure, and a red micro LED strip. In another example, the designated area includes a different number of clusters of each corresponding color LED. For example, the designated area may include a cluster of three square blue micro LEDs, ten circular green micro LEDs, and five red micro LED strips. Line segments depicting different areas (for example, each pixel area) can be defined in the patterning according to the device design parameters.

In addition, although the size of the green micro LED in area 361 is shown in Figure 3E as similar to the size of the blue micro LED in area 360, it is expected that the size of each micro LED can be adjusted to form micro LEDs of different physical sizes. LED. Similarly, although the red micro LEDs in area 362 are shown in Figure 3E as having different sizes from the blue micro LEDs in area 360 and the green micro LEDs in area 361, it is expected that the size of each micro LED can be adjusted to The formation of micro LEDs with similar physical dimensions. Alternatively, the size of each micro LED can be adjusted to form a micro LED with similar light (eg, intensity) output.

Figures 4A-4B schematically show the formation of micro LEDs on a silicon substrate 452 according to another embodiment. In such an example, the blue and green colors are formed by covering the upper surface 460 of the silicon substrate 452 with the <001> orientation and etching into the silicon substrate 452 to expose the surface 464 within the etched features 465 of the silicon substrate 452 Micro LED. The surface 464 having a <111> orientation within the etched feature 465 helps to grow cubic (zinc mixed) GaN 466 on silicon. As described above, a cubic (zinc mixed) GaN 466 is formed in the etched feature 465, and then an InGaN/GaN MQW is formed thereon. The AlInGaP-based red micro LED can then be formed on the substrate 452 as described above (for example, in operations 106-114 of FIG. 1). A plan view of such a silicon substrate 452 is shown in FIG. 4B. The silicon substrate 452 includes areas 461, 462, and 463 of green, blue, and red (respectively) micro LEDs. It is worth noting that the interval between adjacent green micro LEDs in the area 461 is greater than the interval between adjacent blue micro LEDs in the area 462 to promote the difference in indium concentration of each MQW to adjust the emission color.

Figure 5 is a processing system 530 according to at least one embodiment. The processing system 530 may be a system for implementing various aspects of this disclosure. However, it is contemplated that other processing systems may be utilized additionally or alternatively.

The processing system 530 includes a factory interface 532 for receiving the cassette 534. The factory interface 532 is coupled to the buffer station 536, and the substrate is transferred through the buffer station 536 by the factory interface robot 538. The substrate is transferred and received from the buffer station 536 by the transfer robot 540 located in the transfer chamber 542. The transfer chamber is coupled to one or more processing chambers 500a-500e. It is contemplated that the processing chambers 500a-500e may include (for example) one or more clean chambers (such as SiCoNi® chambers), one or more MOCVD chambers available from Applied Materials of Santa Clara, California Chamber and one or more passivation chambers (such as one or more ALD passivation chambers _{for Al 2} O ₃ , SiO _{2 , AlN available from Applied Materials of Santa Clara, California, or for Al 2} One or more CVD passivation chambers of O ₃ , SiO ₂ , AlN or H _{2 S).} Although five processing chambers 500a-500e are shown, it is contemplated that more or fewer processing chambers may be utilized. In addition, although the processing chambers 500a-500e are shown in a cluster configuration, it is contemplated that the processing chambers may be operated in a non-clustered configuration.

The processor 548 is coupled to the processing system 530 to control various aspects thereof. The processor 548 may include a processor that executes program code instructions stored on a tangible, non-transitory computer-readable medium to perform and/or control various operations described herein. The computer-readable medium may include any suitable memory for storing instructions, such as read-only memory (ROM), random access memory (RAM), flash memory, electrically erasable programmable ROM (EEPROM) ), hard disk drive, compact disc ROM (CD-ROM), floppy disk, punch card, tape and the like. The processor 548 may control the operation of the processing system 530 to facilitate the operation of the methods described herein. Example list

Among other things, this disclosure provides the following aspects, each aspect may be considered to optionally include any alternative aspect.

Article 1. A method for processing a substrate, comprising the following steps: covering a GaN-based blue micro LED, a GaN-based green micro LED or a combination of them on a silicon substrate provided in a processing system; and forming on the silicon substrate Multiple AlInGaP based red micro LEDs.

Article 2. The method according to claim 1, wherein the step of forming a plurality of AlInGaP-based red micro LEDs on a silicon substrate includes the following steps: selectively depositing GaAs in the patterned area at a temperature lower than 650°C structure.

Clause 3. The method as described in Clause 1 or 2, wherein the GaN-based blue micro-LED, GaN-based green micro-LED or a combination thereof is covering the GaN-based blue micro-LED, GaN-based green micro-LED or The combination of the previously selectively deposited GaN structure.

Clause 4. The method as described in Clause 3, wherein the GaN-based blue micro-LED, GaN-based green micro-LED or a combination thereof are formed on <111> facet epitaxially grown silicon features.

Clause 5. The method as described in Clause 3 or 4, wherein GaN-based blue micro LEDs, GaN-based green micro LEDs, or a combination thereof are formed on the <111> surface of the features etched into the silicon substrate.

Clause 6. The method according to any one of clauses 3-5, wherein the GaN-based blue micro LED, GaN-based green micro LED, or a combination thereof includes vertical rods.

Clause 7. The method according to any one of clauses 1 to 6, wherein the GaN-based blue micro-LED, GaN-based green micro-LED, or a combination thereof is formed by a blanket layer.

Clause 8. The method according to any one of Clauses 1-7, wherein the step of covering GaN-based blue micro LEDs, GaN-based green micro LEDs, or a combination thereof includes the following steps: covering GaN-based blue micro LEDs and Both GaN-based green micro LEDs.

Clause 9. The method of any one of Clauses 1-8, wherein the processing system includes a transfer chamber coupled to the cleaning chamber, the MOCVD chamber, and the passivation chamber.

Article 10: A device comprising: a silicon substrate; a plurality of GaN-based blue micro LEDs arranged on a silicon substrate; a plurality of GaN-based green micro LEDs arranged on a silicon substrate; and a plurality of AlInGaP-based red micro LEDs, Set on the silicon substrate.

Article 11: A non-transitory computer-readable medium that stores instructions. The instructions perform the following operations when executed by the processor of the system, including: forming a plurality of GaN-based blue micro LEDs on a silicon substrate set in the processing system ; A plurality of GaN-based green micro LEDs are formed on a silicon substrate; a plurality of GaN-based blue micro LEDs, a plurality of GaN-based green micro LEDs or a combination thereof covered on the silicon substrate; and a plurality of AlInGaPs are formed on the silicon substrate Base red micro LED.

Article 12. The non-transitory computer readable medium as described in Article 11, wherein the step of forming a plurality of AlInGaP-based red micro LEDs on a silicon substrate includes the following steps: in the patterned area at a temperature lower than 650°C In the selective deposition of GaAs structure.

Article 13. The non-transitory computer readable medium as described in Article 11 or Article 12, wherein a plurality of GaN-based blue micro LEDs, a plurality of GaN-based green micro LEDs, or a combination thereof are selected before the masking step Deposition of GaN structure.

Clause 14. The non-transitory computer-readable medium as described in Clause 13, wherein a plurality of GaN-based blue micro LEDs, a plurality of GaN-based green micro LEDs, or a combination thereof are formed on the features etched into the silicon substrate <111> On the surface.

Clause 15. The non-transitory computer-readable medium as described in Clause 13 or 14, wherein a plurality of GaN-based blue micro LEDs, a plurality of GaN-based green micro LEDs, or a combination thereof are formed on the <111> mark Surface epitaxial growth of silicon features.

Clause 16. The non-transitory computer readable medium as described in any of Clauses 13-15, wherein the plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof comprise vertical rods.

Article 17. The non-transitory computer-readable medium as described in any of Articles 11-16, wherein a plurality of GaN-based blue micro-LEDs, a plurality of GaN-based green micro-LEDs, or a combination thereof are formed of a blanket layer .

Article 18. The non-transitory computer-readable medium as described in any of Articles 11-17, wherein the covering step includes the following steps: covering both the GaN-based blue micro LED and the GaN-based green micro LED.

Clause 19. The non-transitory computer readable medium as described in any of Clauses 11-18, wherein the processing system includes a transfer chamber coupled to the cleaning chamber, the MOCVD chamber, and the passivation chamber.

Article 20. The non-transitory computer readable medium as described in any of Articles 11-19, wherein the step of forming a plurality of AlInGaP-based red micro LEDs on a silicon substrate includes the following steps: at a temperature lower than 600°C A GaAs structure is selectively deposited in the patterned area.

Although the aspect here is described using deposition techniques (such as MOCVD), other deposition techniques (such as molecular beam epitaxy (MBE)) can also be considered.

This disclosure includes methods for forming red, blue, and green micro LEDs on a single substrate. Compared with conventionally used sapphire substrates, the formation of red, blue, and green micro LEDs on silicon substrates can at least provide increased productivity due to the reduction in the number of operations, the elimination of pick-and-place processing, and the increased size of the silicon substrate.

Although the foregoing content relates to the embodiments of this disclosure, other and further embodiments of this disclosure can be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the scope of the following patent applications Decided.

100: method 102: Operation 104: Operation 106: Operation 108: Operation 110: Operation 112: Operation 114: Operation 200: Silicon substrate 220: upper surface 222: Surface 253: Mask 260: crystalline silicon 262: structure 350: Micro LED 351: substrate surface 352: Substrate 353: Mask 354: photoresist 355: open 356: V-shaped facet 357: Surface 358: gaAs material 359: MQW 360: area 361: area 362: area 452: silicon substrate/substrate 460: upper surface 461: region 462: region 463: region 464: surface 465: feature 466: Cubic (zinc mixed) GaN 500a-e: processing chamber 530: Processing System 532: Factory Interface 534: Box 536: Buffer Station 538: Factory interface manipulator 540: Transport Robot 542: Transfer Chamber 548: processor

In order to understand the above-mentioned features of the disclosure in detail, a more detailed description of the disclosure briefly outlined above can be obtained by referring to the embodiments. Some embodiments are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments, and therefore should not be considered as limiting the scope thereof, and other equivalent embodiments may be allowed.

Fig. 1 is a flowchart of a method of forming a micro LED on a substrate according to at least one embodiment.

Figure 2 schematically shows a starting substrate structure on which micro LEDs can be formed according to at least one embodiment.

Figures 3A-3E schematically show the substrate during operation associated with the flowchart of Figure 1 according to at least one embodiment.

Figures 4A-4B schematically show the formation of micro LEDs on a substrate according to at least one embodiment.

Figure 5 is a processing system according to at least one embodiment.

To facilitate understanding, the same element symbols are used where possible to represent the same elements in the drawings. It is contemplated that the elements and features of one embodiment can be beneficially incorporated into other embodiments without further description.

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100: method

102: Operation

104: Operation

106: Operation

108: Operation

110: Operation

112: Operation

114: Operation

Claims (20)

A method of processing a substrate includes the following steps: Covering a plurality of GaN-based blue micro LEDs, a plurality of GaN-based green micro LEDs, or a combination thereof on a silicon substrate installed in a processing system; and A plurality of AlInGaP-based red micro LEDs are formed on the silicon substrate. The method according to claim 1, wherein the step of forming a plurality of AlInGaP-based red micro LEDs on the silicon substrate comprises the following steps: selectively depositing a plurality of AlInGaP-based red micro LEDs at a temperature lower than 650° C. A GaAs structure. The method according to claim 1, wherein the GaN-based blue micro-LEDs, the GaN-based green micro-LEDs, or a combination thereof are covering multiple GaN-based blue micro-LEDs, multiple GaN-based green micro-LEDs, or The combination of multiple GaN structures previously selectively deposited. The method according to claim 3, wherein the GaN-based blue micro LEDs, the GaN-based green micro LEDs, or a combination thereof are formed on a plurality of <111> facet epitaxially grown silicon features. The method according to claim 3, wherein the GaN-based blue micro LEDs, the GaN-based green micro LEDs, or a combination thereof are formed on a plurality of <111> surfaces of a plurality of features etched into the silicon substrate . The method according to claim 3, wherein the GaN-based blue micro LEDs, the GaN-based green micro LEDs, or a combination thereof include a plurality of vertical rods. The method according to claim 1, wherein the GaN-based blue micro LEDs, the GaN-based green micro LEDs, or a combination thereof are formed by a plurality of blanket layers. The method according to claim 1, wherein the step of covering a plurality of GaN-based blue micro LEDs, a plurality of GaN-based green micro LEDs, or a combination thereof includes the following steps: covering the GaN-based blue micro LEDs and the Both GaN-based green micro LEDs. The method according to claim 1, wherein the processing system includes a transfer chamber coupled with a cleaning chamber, a MOCVD chamber, and a passivation chamber. A device that includes: A silicon substrate; A plurality of GaN-based blue micro LEDs are arranged on the silicon substrate; A plurality of GaN-based green micro LEDs are arranged on the silicon substrate; and A plurality of AlInGaP-based red micro LEDs are arranged on the silicon substrate. A non-transitory computer-readable medium that stores a plurality of instructions that, when executed by a processor of a system, perform the following operations, including: Forming a plurality of GaN-based blue micro LEDs on a silicon substrate set in a processing system; A plurality of GaN-based green micro LEDs are formed on the silicon substrate; The plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof covered on the silicon substrate; and A plurality of AlInGaP-based red micro LEDs are formed on the silicon substrate. The non-transitory computer-readable medium according to claim 11, wherein the step of forming a plurality of AlInGaP-based red micro LEDs on the silicon substrate includes the following steps: in a plurality of patterned areas at a temperature lower than 650°C In the selective deposition of multiple GaAs structures. The non-transitory computer-readable medium according to claim 11, wherein the plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof are a plurality of selectively deposited before the covering step GaN structure. The non-transitory computer-readable medium of claim 13, wherein the plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof form a plurality of features etched into the silicon substrate The multiple <111> on the surface. The non-transitory computer-readable medium according to claim 13, wherein the plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof are formed on a plurality of <111> facet epitaxial growth Silicon characteristics. The non-transitory computer-readable medium according to claim 13, wherein the plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof includes a plurality of vertical bars. The non-transitory computer-readable medium according to claim 11, wherein the plurality of GaN-based blue micro LEDs, the plurality of GaN-based green micro LEDs, or a combination thereof are formed by a plurality of blanket layers. The non-transitory computer-readable medium according to claim 11, wherein the covering step includes the following steps: covering both the GaN-based blue micro LEDs and the GaN-based green micro LEDs. The non-transitory computer-readable medium according to claim 11, wherein the processing system includes a transfer chamber coupled with a cleaning chamber, a MOCVD chamber, and a passivation chamber. The non-transitory computer-readable medium according to claim 11, wherein the step of forming a plurality of AlInGaP-based red micro LEDs on the silicon substrate includes the following steps: in a plurality of patterned areas at a temperature lower than 600°C In the selective deposition of multiple GaAs structures.

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