TW202107079A - Extended gate transistor for sensing applications - Google Patents

Abstract

The invention relates to a device for detecting at least one analyte in a medium, said device comprising at least one extended gate field effect transistor comprising at least one extended gate, at least one organic semiconducting layer partially or totally covering the at least one extended gate, said layer comprising at least one organic semiconducting material and at least one metallic layer covering partially the at least one organic semiconducting layer wherein the work function of the extended gate is superior or equal to the work function of the at least one organic semiconducting material. It also relates to its method thereof.

Description

Extended gate transistor for sensing applications

The present invention relates to the field of biological and/or chemical sensing, and particularly relates to the field of extended gate transistors for biological and/or chemical sensing applications.

Among hand-held multiplexed discrete transistors, the use of sensors based on ion-sensitive field-effect-transistor (ISFET) technology is known. In fact, ISFETs are attractive due to their small size, fast response speed, solid-state characteristics, and the ability to mass-produce in standard electronic manufacturing processes with various post-processing capabilities.

In addition, from the academic paper "Hand-Held Transistor Based Electrical and Multiplexed Chemical Sensing System" (Matti Kaisti, Zhanna Boeva, Juho Koskinen, Sami Nieminen, Johan Bobacka and Kalle Levon, November 28, 2016) It is also possible to add a semiconducting polymer layer, such as polyaniline-dinonylnaphthalene sulfonic acid (PANI-DNNSA) on the gate. This way of using semiconducting polymer layers in media such as gases or liquids increases their stability, thereby Provides a wider water window and non-oxidizing operation in water. There are several reasons why polyaniline-dinonylnaphthalene sulfonic acid (PANI-DNNSA) is used in gate electrodes. The main ones are: easier to immobilize antibodies, more stable in aqueous environments, and its presence in conductive polymers The electrical activity.

However, the use of hand-held transistors described in the prior art requires a vertical and non-planar reference electrode separate from the device. This configuration is too cumbersome and requires a more compact and convenient system.

The purpose of the present invention is to use a new device to overcome the above shortcomings, the device is more convenient, compact and has better voltage stability, so that the measurement of the analyte has higher repeatability and sensitivity.

The present invention relates to a device for detecting at least one analyte in a medium, and the device includes:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material.

According to an embodiment, the difference between the work function of the at least one extended gate and the work function of the at least one organic semiconductor material is between 0.5 and 1.5 eV.

According to an embodiment, the extended gate field effect transistor further includes:

Base

Source

Dip pole; and

The insulator electrically isolates the extended gate from the substrate.

According to an embodiment, the metal layer extends from the source.

According to an embodiment, the at least one metal layer covers at least 50% of the surface of the at least one organic semiconductor layer.

According to an embodiment, the at least one metal layer covers less than 99% of the surface of the at least one organic semiconductor layer.

According to an embodiment, the at least one organic semiconductor material is a semiconducting polymer or oligomer.

According to an embodiment, the at least one organic semiconductor material is a hole-conducting polymer.

According to an embodiment, the hole-conducting polymer is selected from polyaniline (PANI), polyacetylene, polypyrrole, polyphenyl, polythiophene; alkyl, aromatic, cyclic, and cyclic ethers are used in the aromatic ring. , Methoxy, ethoxy, ether, ester or any other modified polyaniline (PANI), polyacetylene, polypyrrole, polyphenyl, polythiophene; 3- and 3,4-alkyl and aryl substituted pyrroles , N-alkylpyrrole, N-arylpyrrole and poly 3,4-ethylenedioxythiophene or a mixture of these groups.

According to an embodiment, the hole-conducting polymer is doped with acid, such as dinonylnaphthalenesulfonic acid, hydrochloric acid, sulfuric acid, toluenesulfonic acid, camphorsulfonic acid, alkylbenzenesulfonic acid, any that can protonate polyaniline. Other compounds, or mixtures thereof.

According to an embodiment, the at least one metal layer includes at least one metal exhibiting a work function of 4 to 6 eV.

According to an embodiment, the device includes a plurality of extended gate field effect transistors, each of the extended gate field effect transistors including an extended gate configured to detect different analytes in the medium.

According to an embodiment, the at least one analyte line is selected from the group comprising selective biomolecules, such as antigens, antibodies, fragmented antibodies, nucleotides, nucleic acids, aptamers, cells, peptides , Trace metals, pollutant molecules, pesticides, toxic chemicals, biological agents, imprints or ions.

According to an embodiment, the device is configured to determine the presence, concentration or level of at least one analyte in the medium.

The present invention relates to a system for detecting at least one analyte in a medium, and the system includes:

At least one detection device, including:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material;

A reading device configured to digitize the signal from the detection device; and

The display device is configured to display the digitized signal to the user.

According to an embodiment, the digitized signal is an indicator of the presence of at least one analyte in the medium, and the concentration or level of the at least one analyte in the medium.

According to an embodiment, the at least one analyte line is selected from the group comprising selective biomolecules, such as antigens, antibodies, fragmented antibodies, nucleotides, nucleic acids, aptamers, cells, peptides , Trace metals, pollutant molecules, pesticides, toxic chemicals, biological agents, imprints or ions.

The present invention relates to a method for detecting at least one analyte in a medium. The method includes the following steps:

Provide a detection device, the detection device includes:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material;

Depositing a predetermined volume of the medium on the at least one extended gate; and

At least one analyte in the medium is detected.

The present invention relates to a method for detecting at least one analyte in a medium. The method includes the following steps:

Provide a detection system, which includes:

At least one detection device, including:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material;

A reading device configured to digitize the signal from the detection device; and

The display device is configured to display the digitized signal to the user;

Depositing a predetermined volume of the medium on the at least one extended gate;

Generating a voltage signal from the detection device according to the detection of the at least one analyte in the medium;

Sending the voltage signal to the reading device;

Digitize the voltage signal;

Process the digitized signal obtained;

Sending the digitized signal to the display device; and

The digitized signal is displayed to the user.

1: device

2: Extended gate field effect transistor, transistor

3: Organic semiconductor layer

4: Metal layer, gold layer

12C: Voltage signal

21: Extended gate, gold gate, extended gold gate

31: Organic semiconductor materials, PANI: DNNSA layer

d: Dip pole

E: Reference electrode

I: Insulator

M: Medium

S: base

s: source

The following detailed description, if you read in conjunction with the diagrams, you will be able to understand better. For illustrative purposes, a device or system is disclosed in a preferred embodiment. However, it should be understood that the present application is not limited to the configurations, structures, features, embodiments, and appearances exactly in accordance with the drawings. Schema is not compared It is drawn as an example, and is not intended to limit the patentable scope of the depicted embodiment. Based on this, it should be understood that if the features described in the scope of the attached patent application are suffixed with reference symbols, these symbols are only for enhancing the understanding of the scope of the patent application, rather than limiting the scope of the patent application in any way.

The following description of the system embodiments can highlight the features and advantages of the present invention. The description is provided by way of example only and with reference to the accompanying drawings, in which:

Fig. 1 is a schematic diagram of the apparatus of the present invention according to the first embodiment.

Fig. 2 is a schematic diagram of the device of the present invention according to the first embodiment.

3A is a top view of the structure of the metal layer and the organic semiconductor layer according to the first embodiment.

FIG. 3B is a top view of a structure of a metal layer and an organic semiconductor layer according to another embodiment.

FIG. 3C is a top view of a structure of a metal layer and an organic semiconductor layer according to another embodiment.

FIG. 3D is a top view of a structure of a metal layer and an organic semiconductor layer according to another embodiment.

FIG. 3E is a top view of a structure of a metal layer and an organic semiconductor layer according to another embodiment.

Fig. 4A is a schematic diagram of a device according to the prior art.

Fig. 4B is a schematic diagram of the device of the present invention according to the second embodiment.

Fig. 4C is a schematic diagram of the device of the present invention according to the third embodiment.

FIG. 5A is a block diagram of the reading device of the present invention according to the first embodiment.

FIG. 5B is a block diagram of the power generation of the reading device of the present invention according to the first embodiment.

Fig. 6 is a schematic diagram of an apparatus of the present invention according to a third embodiment.

Figure 7 is a flowchart of the user interface and the operation of GEMSS. GEMSS allows phone-initiated detection and data drawing and storage.

FIG. 8A shows the change of the threshold voltage (Vth) caused by the organic semiconductor layer in the rubber burning process of the gas detection device with the increase in temperature.

FIG. 8B illustrates the change of the threshold voltage (Vth) caused by the organic semiconductor layer in the rubber burning process of the gas detection device with the decrease in temperature.

Figure 9 shows the response to the enzyme reaction when the device is used in a liquid environment with an enzyme reaction. (The curve on the left is the threshold tension response when the enzyme is cured on the organic semiconductor layer; the curve on the right is the response immediately after adding lactic acid (analyte), and the middle curve is the same after stabilization)

Figure 10 shows the critical tension (Vth) response of the antibody-antigen reaction. The triangular dotted line on the right represents the response before the substrate is added, and the square dotted line in the middle and the triangular dotted line on the left represent the drain current change after the substrate is added twice.

Fig. 11 is a flowchart of a detection method implemented by the device of the present invention according to the first embodiment.

Fig. 12 is a flowchart of a detection method implemented by the system of the present invention according to another embodiment.

Although various embodiments have been described and illustrated, the embodiments of the present invention are not limited thereto. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications to the embodiments without departing from the true spirit and scope of the disclosure as defined by the scope of the patent application.

The present invention relates to a device for detecting at least one analyte in a medium, and the device includes:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covers the at least one organic semiconductor layer.

The work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material.

"Detecting at least one analyte in the medium" herein refers to determining whether at least one analyte is present in the medium and/or the concentration or level of at least one analyte present in the measuring medium.

According to one embodiment, at least one biomarker is deposited on the at least one organic semiconductor layer. The at least one biomarker will solidify the corresponding at least one analyte on the device, thereby causing a change in the work function of the at least one semiconductor material.

In this device, by extending the gate electrode from the transistor, the gate electrode can be simply immersed in a medium such as gas or liquid while leaving the transistor in the air. This prevents any transistor damage due to the environment, thereby preventing any transistor packaging problems.

The at least one organic semiconductor layer serves as a mediator between the ionic conductor and the electrical conductor, ensuring robust and reliable sensor performance. In particular, conductive polymers are effective media because they both conduct electricity and conduct ions when doped. This allows the transduction of ion signals into electronic signals. The organic semiconductor layer produces a larger interface redox area.

The at least one extended gate and the at least one organic semiconductor layer provide an additional organic semiconductor/metal interface, wherein when the work function of the gate and the at least one organic semiconductor layer is matched, the Schottky barrier can be obtained. barrier) efficiency. This allows a sensitive interface between the gate and the at least one organic semiconductor layer and can enhance the detection of analytes.

Indeed, the key is the energy level alignment of the interface between the gate and the at least one organic semiconductor layer. The energy barrier of charge injection depends on the energy level aligned at the interface of effective charge injection. When the work function of the gate is greater than the energy level of the polaron of the at least one organic semiconductor material on the interface, charge injection will occur.

The at least one organic semiconductor layer is exposed to the detection environment or medium. During use, after being immersed in the medium, the analyte will combine with the organic semiconductor material, thereby changing the band gap of the semiconductor, thereby further controlling the Schottky barrier and affecting the gate voltage. This changes the output tension, which can indicate the presence of analytes in the medium.

Adding a metal layer on the at least one organic semiconductor layer can eliminate bulky reference electrodes. This results in an all-on-chip planar device that is easy to manufacture and operate.

In addition, this layered configuration allows a larger voltage area, better control and stability of the gate voltage, thereby improving the repeatability of the measurement and the stability of the device.

The device of the present invention is also referred to herein as a "detection device".

According to one embodiment, the device is disposable after use.

According to an embodiment, the device utilizes ion sensitive field effect transistor (ISFET) technology.

According to an embodiment, the at least one extended gate field effect transistor is an ion sensitive field effect transistor. Ion-sensitive field-effect transistors are attractive because of their small size, fast response speed, solid-state characteristics, and they can be mass-produced in standard electronic manufacturing processes with multiple post-processing capabilities.

According to an embodiment, the at least one organic semiconductor layer partially covers the at least one extended gate, in other words, the at least one organic semiconductor layer covers between 50% and 100% of the area of the at least one extended gate.

According to an embodiment, the at least one organic semiconductor layer completely covers the at least one extended gate, in other words, the at least one organic semiconductor layer covers 100% of the area of the at least one extended gate.

According to an embodiment, the at least one organic semiconductor layer is a transducing layer located between the at least one extended gate and the at least one metal layer. Compared with a configuration without a transduction layer, the at least one organic semiconductor layer greatly reduces the drift of the electrode.

According to an embodiment, the at least one organic semiconductor layer is deposited by drop casting, dip coating, spray coating, spin coating or any other method known in the art On the at least one extended gate.

According to an embodiment, the difference between the work function of the at least one extended gate and the work function of the at least one organic semiconductor material is between 0.5 and 1.5 eV.

According to an embodiment, the difference between the work function of the at least one extended gate and the work function of the at least one organic semiconductor material is between 0.6 and 1.5 eV, between 0.7 and 1.5 eV, between 0.8 and 1.5 Between eV, between 0.9 and 1.5eV, between 0.5 and 1.4eV, between 0.5 and 1.3eV, between 05. and 1.2eV, between 0.5 and 1.1eV, between 0.6 and 1.4eV Between 0.7 and 1.3 eV, between 0.8 and 1.2 eV, or between 0.9 and 1.1 eV.

According to an embodiment, the difference between the work function of the at least one extended gate and the work function of the at least one organic semiconductor material is at least 0.5 eV, 0.6 eV, 0.7 eV, 0.8 eV, 0.9 eV, 1.0 eV, 1.1eV, 1.2eV, 1.3eV, 1.4eV or 1.5eV.

According to an embodiment, the difference between the work function of the at least one extended gate and the work function of the at least one organic semiconductor material is 1 eV.

According to an embodiment, the work function of the at least one extended gate is between 4 and 6 eV, between 4.5 and 5.5 eV, or between 5 and 5.5 eV.

For example, if the extended gate is made of gold, its work function is between 5.31 and 5.47 eV; if the extended gate is made of copper, its work function is between 4.53 and 5.10 eV; if the extended gate is made of copper, its work function is between 4.53 and 5.10 eV; The type gate is made of silver, and its work function is between 4.37 and 5.31 eV. Of course, the work function of a single crystal material depends on the crystal plane through which electrons are removed.

According to an embodiment, the at least one extended gate includes at least one single crystal material.

According to an embodiment, the at least one extended gate includes at least one metal.

According to an embodiment, examples of the at least one metal include but are not limited to: gold, platinum, silver, copper, or a mixture thereof.

According to an embodiment, the at least one extended gate is circular or oval.

According to an embodiment, the at least one extended gate is circular and has a diameter of 0.5 mm to 50 mm.

According to an embodiment, the work function of the at least one organic semiconductor material is between 3 and 5 eV, between 3.5 and 5 eV, or between 4 and 5 eV.

For example, the work function of the at least one organic semiconductor material may depend on the oxidation state of the organic semiconductor material, its protonation level, the degree of disorder, and film preparation (film preparation). ) Or a deposition procedure to deposit a layer of the at least one organic semiconductor material on the at least one extended gate.

For example, the work function of polyaniline is between 4 and 5 eV. The work function of polyaniline may depend on oxidation state, protonation level, degree of disorder, and layer preparation.

According to an embodiment, it can be achieved by ultraviolet photoemission spectroscopy (UPS), retarding diode, Kelvin probe, or any method known in the art. Other methods to measure work function.

According to an embodiment, the at least one extended gate is a gate extended via a wire (eg gold trace), such as a MOSFET gate. In this embodiment, the electrocrystalline The body is isolated from the medium, and the at least one extended gate can be immersed in the medium or surrounded by the medium, thereby preventing the drift behavior of the transistor caused by the interaction between the transistor and the medium. This also provides sealing and stable operation.

According to an embodiment, the threshold voltage of the extended gate field effect transistor is:

是該延伸式閘極場效應電晶體的臨界電壓；

是 MOSFET的臨界電壓；V _cell 是該半導體層的額外貢獻。 among them

Is the critical voltage of the extended gate field effect transistor;

Is the critical voltage of the MOSFET; V _cell is the additional contribution of the semiconductor layer.

According to an embodiment, the extended gate field effect transistor further includes:

Base

Source

Dip pole; and

The insulator electrically isolates the metal gate from the substrate.

According to an embodiment, the substrate includes an inorganic material, such as silicon; a composite material, such as a glass fiber reinforced epoxy laminate (FR4) with a gold surface treatment; and an organic material, such as a polymer.

According to an embodiment, the insulator includes a dielectric material.

According to an embodiment, the insulator includes an oxide material, such as SiO ₂ . This insulator can also be referred to as "gate oxide."

According to an embodiment, the metal layer extends from the source. Extension means that the metal layer is not close to the source. In particular, the metal layer can be connected to the source via an extension connection, which in turn includes the organic semiconductor layer and a wire connection that terminates in the gate of the field effect transistor. In the specific embodiment shown in FIG. 4B, the metal layer (4) and the organic semiconductor layer (3) are arranged at On the extended gate (21), the extended gate (21) is closed to the gate oxide (I) on the field effect transistor. In another specific embodiment shown in FIG. 4C, the metal layer (4) and the organic semiconductor layer (3) are disposed on the extended gate (21), and the extended gate (21) uses a wire It is electrically connected to the gate oxide (I) on the field effect transistor.

Indeed, the Schottky barrier obtained by the contact between the organic semiconductor layer and the metal layer needs to be connected to the gate of the field effect transistor, while the organic semiconductor layer is in contact with the medium and ultimately targets the analyte (target). The exact location of the Schottky barrier is not critical, and the Schottky barrier can be far away from the field-effect transistor.

According to an embodiment, the metal layer and the gate do not touch or touch. This embodiment prevents the occurrence of short circuits.

According to an embodiment, the metal layer is not modified or functionalized.

According to an embodiment, the metal layer is modified or functionalized.

According to an embodiment, the metal layer is partially or completely covered by the protective layer to make it stable in the medium. According to an embodiment, the protective layer includes a material that is stable in water, such as an Ag/AgCl layer.

According to an embodiment, the at least one metal layer covers at least 1% of the surface of the at least one organic semiconductor layer. In this embodiment, the at least one organic semiconductor layer requires a minimum coverage of at least 1%, so that the at least one extended gate electrode and the at least one metal layer have electrical contact through the at least one organic semiconductor layer. Indeed, when current is applied to the transistor, the at least one organic semiconductor layer acts as a capacitor between the at least one extended gate and the at least one metal layer, and the open area should be large enough so that the change in the capacitance value affects the whole Gate voltage. The metal is biased, so the transistor operation is a functional measurement.

According to an embodiment, the at least one metal layer covers at least 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 15% of the surface of the at least one organic semiconductor layer , 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or 99 %.

According to an embodiment, the at least one metal layer covers at least 50% of the surface of the at least one organic semiconductor layer.

According to an embodiment, the at least one metal layer covers less than 99% of the surface of the at least one organic semiconductor layer. In this embodiment, at least 1% of the at least one organic semiconductor layer can contact at least one analyte in the medium. For the purpose of sensitivity, at least 1% of the at least one organic semiconductor layer can contact the medium. In fact, if the at least one metal layer completely covers the at least one organic semiconductor layer, the organic semiconductor layer will not provide special sensitivity.

According to an embodiment, the at least one metal layer covers less than 95%, 90%, 85%, 80%, 75%, 70%, 65%, 60%, 55%, 50% of the surface of the at least one organic semiconductor layer. %, 45%, 40%, 35%, 30%, 25%, 20%, 15%, 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, or 2% .

According to an embodiment, the at least one metal layer covers 99% of the surface of the at least one organic semiconductor layer, so that 1% of the at least one organic semiconductor layer can contact at least one analyte in the medium.

According to an embodiment, at least 1%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, or 99% of the accessible medium At least one analyte.

According to an embodiment, 50% of the at least one organic semiconductor layer can contact at least one analyte in the medium.

According to an embodiment, the at least one metal layer covers 50% to 99% of the surface of the at least one organic semiconductor layer.

According to an embodiment, the thickness of the at least one organic semiconductor layer is between 10 nm and 25 μm, preferably between 20 nm and 15 μm, and more preferably between 50 nm and 10 μm.

According to an embodiment, the at least one organic semiconductor material is a semiconductor polymer or oligomer.

According to an embodiment, the at least one organic semiconductor material is a hole conducting polymer.

According to an embodiment, the at least one organic semiconductor material is a p-doped polymer.

According to an embodiment, the at least one organic semiconductor material is a chemically doped polymer. The chemical doping that is affected during sensing thus controls the charge density and increases the work function during the reduction reaction that affects the interfacial dipole from the interception of the counter ion.

According to an embodiment, the hole-conducting polymer is selected from polyaniline (PANI), polyacetylene, polypyrrole, polyphenyl, polythiophene; alkyl, aromatic, cyclic, and cyclic ethers are used in the aromatic ring. , Methoxy, ethoxy, ether, ester or any other modified polyaniline (PANI), polyacetylene, polypyrrole, polyphenyl, polythiophene; 3- and 3,4-alkyl and aromatic Groups of group-substituted pyrrole, N-alkylpyrrole, N-arylpyrrole and poly 3,4-ethylenedioxythiophene or mixtures thereof.

According to an embodiment, the hole-conducting polymer is polyaniline (PANI).

The modification applied to the hole-conducting polymer is, for example, a modification that can improve the solubility, processability, stability, or any other beneficial properties of the hole-conducting polymer.

According to an embodiment, the hole-conducting polymer is doped. In this embodiment, doping the hole-conducting polymer can change its work function, so that it can be adjusted according to the work function of the gate.

According to an embodiment, the hole-conducting polymer is doped with a dopant that reduces its work function.

According to an embodiment, the doping of the hole-conducting polymer occurs through protonation, for example by reacting the polymer with an acid.

According to an embodiment, the hole-conducting polymer is doped with acid HA, such as dinonylnaphthalenesulfonic acid (DNNSA), hydrochloric acid, sulfuric acid, toluenesulfonic acid, camphorsulfonic acid (CSA, racemic) or hand Chiral), alkylbenzene sulfonic acid, any other compound capable of protonating polyaniline, or a mixture thereof.

According to an embodiment, the hole-conducting polymer is polyaniline (PANI) doped with dinonylnaphthalenesulfonic acid.

According to an embodiment, the hole-conducting polymer has the chemical formula (I), where A- represents the conjugate base of acid HA:

According to an embodiment, UPS and Kevin probe can be used to quantitatively measure the degree of doping. The doping level is a function of the band gap between the LUMO and HOMO levels.

According to an embodiment, the at least one organic semiconductor material is dissolved in an organic solvent before being deposited on the at least one extended gate.

According to an embodiment, the at least one organic semiconductor material may be used as a supercapacitor or a dynamic capacitor.

According to an embodiment, the at least one metal layer is a flat metal electrode.

According to an embodiment, the thickness of the at least one metal layer is between 100 nm and 1 mm, preferably between 150 nm and 0.1 mm.

According to an embodiment, the at least one metal layer includes exhibiting 4 to 6 eV, 4.5 to 6 eV, 5 to 6 eV, 5.5 to 6 eV, 4 to 5.5 eV, 4 to 5 eV, 4 to 4.5 eV, 4.5 to 5.5 eV, 5 to At least one metal with a work function of 5.5 eV or 5.3 to 5.5 eV.

According to an embodiment, examples of the at least one metal include but are not limited to: scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, Rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, any metal with a work function of 4 to 6 eV, or a mixture of the above metals.

According to an embodiment, examples of the at least one metal include but are not limited to: Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mg, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, any metal with a work function of 4 to 6 eV, or a mixture of the above metals.

According to an embodiment, the at least one metal is Au.

According to an embodiment, the device includes a plurality of extended gate field effect transistors (EGFETs), such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 , 16, 17, 18, 19 or 20 extended gate field effect transistors, each of which includes an extended gate. In this embodiment, each of the extended gates is configured to detect a different analyte in the medium. In this embodiment, the extended gates are measured at the same time. This allows a wide range of analytes to be tested at low cost and robustness.

According to one embodiment, the device includes five extended gate field effect transistors, each of the extended gate field effect transistors includes an extended gate, and each of the extended gates is configured to detect one of the mediums Different analytes.

According to an embodiment, the medium is a fluid, liquid or gas.

According to an embodiment, the medium is electrolyte, water, biological fluid or a mixture thereof.

According to an embodiment, examples of the biological fluid include, but are not limited to: blood, serum, plasma, saliva, sweat, tears, urine, water, aqueous solutions, or mixtures thereof.

According to an embodiment, the at least one biomarker is selected from the group consisting of an antigen, an antibody, a fragmented antibody, and an ion-selective membrane.

According to an embodiment, examples of the ion selective membrane include but are not limited to: K ⁺ selective membrane, Na ⁺ selective membrane.

According to an embodiment, the at least one analyte system is selected from the group comprising selective biomolecules, such as antigens, antibodies, fragmented antibodies, nucleotides, nucleic acids, aptamers, Cells, peptides, trace metals, pollutant molecules, pesticides, toxic chemicals, biological agents, imprints or ions.

According to one embodiment, the device includes an extended gate field effect transistor, which includes at least one extended gate configured to detect CRP (C-reactive protein), PCT (precalcitonin) , Troponin, lactic acid, IL-6 (interleukin 6), IL-10 (interleukin 10), creatinine, or blood sugar level in the medium.

CRP is a protein that appears in the blood during acute inflammation, infection, trauma, necrosis, malignant tumors, cardiovascular disease, and allergic reactions.

Procalcitonin (PCT) is the peptide precursor of hormone calcitonin, which is related to calcium homeostasis. The level of procalcitonin in the blood of healthy individuals is lower than the detection limit of standard clinical determination (0.01μg/L). The level of procalcitonin will increase due to pro-inflammatory stimulus, especially bacterial-derived pro-inflammatory stimulus.

Troponin is a protein substance that can enter the structure of muscle fibers and regulate their contraction, including in the heart muscle. The troponin test is mainly used for the diagnosis of heart damage.

The lactic acid level is an indicator of septic shock. Accordingly, detecting lactic acid or measuring the level of lactic acid in the medium helps to detect or prevent septic shock.

By detecting IL-6 (Interleukin 6) and IL-10 (Interleukin 10) in the medium, the infection can be detected or the severity of the infection can be determined.

According to an embodiment, the device further includes an exposed extended gate, that is, an extended gate not covered by the organic semiconductor layer. In this embodiment, the exposed extended gate can be used to check the proper operation of the device.

According to an embodiment, the device includes five extended gate field effect transistors, each of which includes one extended gate:

An extended gate is configured to detect CRP (C reactive protein) in the medium;

An extended gate is configured to detect PCT (precalcitonin) in the medium;

An extended gate is configured to detect troponin in the medium;

An extended gate is configured to detect lactic acid in the medium; and

An extended gate is configured to detect IL-6 (Interleukin 6) in the medium.

According to an embodiment, the device includes five extended gate field effect transistors, each of which includes one extended gate:

An extended gate is configured to detect CRP (C reactive protein) in the medium;

An extended gate is configured to detect PCT (precalcitonin) in the medium;

An extended gate is configured to detect troponin in the medium;

An extended gate is configured to detect IL-10 (Interleukin 10) in the medium; and

An extended gate is configured to detect IL-6 (Interleukin 6) in the medium.

According to an embodiment, the device includes a plurality of extended gate field effect transistors, each of the extended gate field effect transistors includes an extended gate, wherein each extended gate is covered by at least one organic semiconductor layer Partially or completely covered.

According to an embodiment, the device includes a plurality of extended gate field effect transistors, each of the extended gate field effect transistors includes an extended gate, wherein all extended gates are covered by the same organic semiconductor layer Partially or completely covered.

According to an embodiment, the device is configured to determine the presence, concentration or level of at least one analyte in the medium. In this embodiment, "determining the presence" refers to indicating the presence of the analyte in the medium through the "positive/negative", "green/red" or "yes/no" system. In other words, a method for determining the presence or concentration or level of at least one analyte in a medium includes the following steps: One is to immerse the device disclosed above in the medium; second, to indicate the presence of the analyte in the medium through a "positive/negative", "green/red" or "yes/no" system.

According to an embodiment, the detection limit of the device is 0.1 pg/ml.

According to an embodiment, the device does not include a further separate reference electrode.

The invention also relates to a method for detecting at least one analyte in a medium.

The method includes the following steps:

A detection device is provided, and the detection device includes:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material;

Depositing a predetermined volume of the medium on the at least one extended gate; and

At least one analyte in the medium is detected.

"Detecting at least one analyte in a medium" herein refers to determining whether the at least one analyte is present in the medium and/or measuring the concentration or level of the at least one analyte present in the medium. "Determine whether the at least one analyte is present in the medium" refers to indicating the presence of the analyte in the medium through a "positive/negative" or "yes/no" system.

The detection device, the extended gate field effect transistor, the extended gate, the organic semiconductor layer, the organic semiconductor material, the metal layer, the medium, and the analyte are all as described above.

According to the first embodiment shown in FIG. 11, a detection device, that is, a processed field effect transistor, is provided. The processing is the sensing material for the target. Then, the critical voltage of the device (here, an ion-sensitive field effect transistor) is determined without exposure to the sample. This is the reference threshold. Then, the sample is deposited on an extended gate. The critical voltage of the device was determined again by exposure to the sample. This is the critical value of the sample. By comparing the reference cut-off value and the sample cut-off value, the existence, quantity or concentration of the target can be determined.

According to the second embodiment shown in FIG. 12, a detection device is provided. The detection device includes a field-effect transistor that has been processed with a sensing material for the target, that is, the processed field-effect transistor. Crystal, and includes an untreated field effect transistor. Then, the critical voltage of the untreated field-effect transistor (here, ion-sensitive field-effect transistor) is determined by exposure to the sample. This is the untreated threshold. Similarly, the critical voltage of the processed field-effect transistor (here, ion-sensitive field-effect transistor) is determined by exposure to the same sample. This is the processed threshold. Determine the difference between the processed cut-off value and the unprocessed cut-off value, and use this difference to determine the presence, quantity, or concentration of the target. Optionally, before determining the presence, quantity, or concentration of the target, the difference between the above-mentioned processed critical value and the unprocessed critical value may be amplified, and then the difference may be converted into a digital signal.

According to an embodiment, a micropipette, a syringe and a needle, a needle only, or any means and methods known in the art may be used to manually deposit the predetermined volume of the medium.

According to an embodiment, the predetermined volume is 2 μl to 10 μl.

According to an embodiment, the predetermined volume is 5 μl.

According to an embodiment, the predetermined volume is at least one drop, one drop or two drops of the medium.

According to an embodiment, the detection of the analyte in the medium is continuous.

The present invention also relates to a system for detecting at least one analyte in a medium, the system including:

At least one detection device, including:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material;

A reading device configured to digitize the signal from the detection device; and

The display device is configured to display the digitized signal to the user.

The biomarkers on the device can solidify the analyte present in the medium, thereby generating ionic charges. The charge is conducted to the transistor, which translates it, and then sends it to the readout device, which in turn transfers it to the display device.

The detection device, the extended gate field effect transistor, the extended gate, the organic semiconductor layer, the organic semiconductor material, the metal layer, the medium, and the analyte are all as described above.

The system of the present invention is also referred to herein as a "detection system".

According to an embodiment, the system is a handheld sensing system.

According to an embodiment, the readout device includes a circuit, a printed circuit board (PCB), and a housing.

According to an embodiment, the circuit is designed on the printed circuit board.

According to an embodiment, the printed circuit board is a four-layer printed circuit board.

According to an embodiment, the printed circuit board includes screw holes for mounting the printed circuit board on the housing.

According to an embodiment, the casing is a plastic casing, preferably, the casing is a 3D printing plastic casing.

According to an embodiment, the housing includes three parts and allows the battery, mechanical switch and connector for the platform to be replaced.

According to an embodiment, the reading device is handheld.

According to one embodiment, the display device is a device that displays colored light, digital signals, images, a series of pictures or movies. According to one embodiment, the display device is a color light emitting diode (LED), a liquid crystal display, a television, a projector, a computer monitor, a personal digital assistant (personal digital assistant), a mobile phone, a laptop computer , Tablets, MP3 players, CD players, DVD players, Blu-ray players, head-mounted displays, glasses, helmets, headsets, headwear, smart watches, watch phones or smart devices.

According to an embodiment, the display device may use an application program to display the signal to the user.

According to an embodiment, the display device is a blue, red or green LED.

According to an embodiment, the digitized signal is an indicator of the presence of at least one analyte in the medium or the concentration or level of at least one analyte in the medium.

According to an embodiment, the system further includes a cable for connecting the detection device, the reading device and the display device.

The invention also relates to a method for detecting at least one analyte in a medium.

The method includes the following steps:

A detection system is provided, which includes:

At least one detection device, including:

At least one extended gate field effect transistor, including at least one extended gate;

At least one organic semiconductor layer partially or completely covering the at least one extended gate, the layer includes at least one organic semiconductor material, and the thickness of the layer is less than 50 μm; and

At least one metal layer partially covering the at least one organic semiconductor layer;

Wherein, the work function of the extended gate is better than or equal to the work function of the at least one organic semiconductor material;

A reading device configured to digitize the signal from the detection device; and

The display device is configured to display the digitized signal to the user;

Depositing a predetermined volume of the medium on the at least one extended gate;

Generating a voltage signal from the detection device according to the detection of the at least one analyte in the medium;

Sending the voltage signal to the reading device;

Digitizing the voltage signal using the reading device;

Process the obtained digital signal;

Sending the digitized signal to the display device; and

The display device is used to display the digital signal to the user.

The detection system, the detection device, the extended gate field effect transistor, the extended gate, the organic semiconductor layer, the organic semiconductor material, the metal layer, the medium, the analyte, the readout device, The display device and the predetermined volume are as described above.

According to an embodiment, the step of processing the obtained digitized signal includes, for example, signal processing using an algorithm.

According to an embodiment, the digitized signal can be sent to the display device using wired connection, wireless connection, cloud connection, WIFI, 3G or 4G connection, or Bluetooth.

According to one embodiment, the digitized signal is coupled to the display device, and the display device can be easily connected to a mobile network and access cloud services and shared database.

According to an embodiment, the digitized signal corresponds to the presence or concentration or level of at least one analyte in the medium.

According to an embodiment, the digitized signal indicates to the user the presence of at least one analyte in the medium through a “positive/negative”, “green/red” or “yes/no” system.

According to one embodiment, the digitized signal displayed to the user is an image, an icon, a symbol, an image sequence, a film, a drawing, a color light, or a color scale.

For example, depending on whether the analyte is present in the medium, the above sign or image may be a "+" sign or a "-" sign.

For example, the color scale may indicate the range of the concentration or level of the analyte in the medium, and each color, lightness, or hue of the color scale corresponds to the precise range of concentration or level.

According to one embodiment, the digitized signal is displayed to the user in real time.

According to an embodiment, the colored light is blue, red or green light. For example, green light can indicate the presence of analyte in the medium, while red light can indicate the absence of analyte in the medium.

According to an embodiment, the digitized signal is displayed to the user 30 seconds, 1 minute, 2 minutes, 3 minutes, 4 minutes, or 5 minutes after the predetermined volume of the medium is deposited on the extended gate.

According to an embodiment, the processing step is implemented by embedded software.

The invention also relates to the use of the device of the invention and/or the system of the invention.

According to an embodiment, the device of the invention and/or the system of the invention may be used to detect at least one analyte in a medium.

According to an embodiment, the device of the invention and/or the system of the invention can be used to determine the presence, concentration and/or level of at least one analyte in a medium.

According to an embodiment, the device of the present invention and/or the system of the present invention may be used for biological sensing applications or chemical sensing applications.

According to an embodiment, the device of the present invention and/or the system of the present invention may be used in medical outpatient applications or emergency care applications.

According to an embodiment, the device of the invention and/or the system of the invention can be used in agricultural applications or food industry applications. For example, the device of the present invention and/or the system of the present invention can be used to detect soil contaminants, pesticides, truffles, or any components of interest for agricultural purposes.

According to an embodiment, the device of the invention and/or the system of the invention may be used for pollution sensing applications. For example, the device of the present invention and/or the system of the present invention can be used to detect soil pollution, air pollution, or pollution of any medium.

According to an embodiment, the device of the invention and/or the system of the invention may be used in sports medicine applications. For example, the device of the present invention and/or the system of the present invention can be used to detect or prevent injury by detecting the secretion of certain proteins.

According to an embodiment, the device of the invention and/or the system of the invention can be used for pH measurement.

According to an embodiment, the device of the present invention and/or the system of the present invention can be used for point-of-care diagnostics, environmental monitoring, food quality and safety, personalized medicine, or wearable sensors.

definition

In the present invention, the following terms have the following meanings:

"EGFET" means an extended gate field effect transistor.

"Work function" and Fermi energy can be used interchangeably in this manual. The work function defines the minimum energy required to move an electron to infinity from a given solid surface.

"PANI: DNNSA" means polyaniline doped with dinonylnaphthalenesulfonic acid.

Illustrative embodiment of the invention

As shown in Figure 1 and Figure 2, the device includes:

Two extended gate field effect transistors 2, including two extended gold gates 21;

An organic semiconductor layer 3, which completely covers an extended gate 21, the layer includes PANI: DNNSA 31; and

A gold layer 4 partially covers the organic semiconductor layer 3.

In this embodiment, one of the two extended gates 21 is exposed to control the good operation of the device.

In this embodiment, the work functions of the gold gate 21 and the PANI:DNNSA layer 31 are matched to ensure that the Schottky barrier is generated at the interface.

This embodiment is particularly advantageous because the PANI:DNNSA layer 31 can be exposed to the detection environment, while the transistor 2 is isolated from the detection environment, thereby preventing its degradation.

After being immersed in the medium M, the analyte will combine with PANI:DNNSA 31 to change its band gap, thereby affecting the gate voltage. This changes the output tension, indicating the presence of analyte in the medium M.

PANI: The gold layer 4 on the DNNSA layer 31 can eliminate the bulky reference electrode E as shown in FIG. 4A. This results in a full-wafer on-plane device that is easy to manufacture and operate. In addition, this allows for a larger voltage area, better control and stability of the gate voltage, thereby improving the repeatability of the measurement and the stability of the device.

As shown in FIG. 3A, the metal layer 4 partially covers the organic semiconductor layer 3.

In this embodiment, a part of the organic semiconductor layer 3 can contact the analyte in the medium M.

This embodiment is particularly advantageous because it allows good sensitivity of the organic semiconductor layer 3 while allowing the large voltage area provided by the coverage of the metal layer 4.

As shown in FIG. 3B, the metal layer 4 covers an annular portion of the organic semiconductor layer 3.

In this embodiment, a part of the organic semiconductor layer 3 can contact the analyte in the medium.

This embodiment is particularly advantageous because it allows good sensitivity of the organic semiconductor layer while allowing the large voltage area provided by the coverage of the metal layer.

As shown in FIG. 3C, the device of the present invention includes five extended gates 21, and the same metal layer 4 covers all five extended gates 21, that is, covers all the organic materials deposited on the extended gates 21. Part of the semiconductor layer 3.

In this embodiment, a part of the organic semiconductor layer 3 on each extended gate 21 can contact the analyte in the medium M.

This embodiment is particularly advantageous because it allows good sensitivity of the organic semiconductor layer 3 while allowing the large voltage area provided by the coverage of the metal layer 4. Compared to depositing the metal layer 4 on each extended gate 21, it is also easier to deposit a larger metal layer 4 on all the extended gates.

As shown in FIG. 3D, the device of the present invention includes five extended gates 21, and the metal layer 4 covers each extended gate 21, that is, covers each organic semiconductor layer deposited on the corresponding extended gate 21 Part of 3.

In this embodiment, a part of the organic semiconductor layer 3 on each extended gate 21 can contact the analyte in the medium M.

This embodiment is particularly advantageous because it allows good sensitivity of the organic semiconductor layer, while allowing the large voltage area provided by the coverage of the metal layer 4.

As shown in FIG. 3E, the device of the present invention includes three extended gates 21 and a metal layer 4. The metal layer 4 is configured to be movable from an open position to a closed position. The metal layer 4 does not cover the extended gate 21, and the metal layer 4 in the closed position simultaneously covers all three extended gates 21, that is, covers a part of each organic semiconductor layer 3 deposited on the extended gate 21.

In this embodiment, a part of the organic semiconductor layer 3 on each extended gate 21 can contact the analyte in the medium M.

This embodiment is particularly advantageous because it allows good sensitivity of the organic semiconductor layer while allowing the large voltage area provided by the coverage of the metal layer.

As shown in Figure 4B, the device includes:

An extended gate field effect transistor 2 includes a p-type silicon substrate S, a source electrode s, a gate g, a gate oxide I, and an extended gold gate 21;

An organic semiconductor layer 3 completely covering the extended gate; and

A metal layer 4 partially covers the organic semiconductor layer 3.

In Figure 4B, the illustration on the right is a side view, which is helpful for better understanding.

In this embodiment, the work functions of the extended gate 21 and the organic semiconductor layer 3 are matched to ensure that the Schottky barrier is generated at the interface.

In this embodiment, only the combination of the extended gate 21/organic semiconductor layer 3/metal layer 4 is immersed in the detection medium M. The detection medium M can be a gas. Indeed, the gas sensitivity of organic semiconductor materials is well known. In this case, the gate voltage is affected by the organic semiconductor material 3, especially if the work function of the organic semiconductor material 3 is affected by the gas analyte.

This embodiment is particularly advantageous because the organic semiconductor layer 3 can be exposed to the detection environment, while the transistor 2 is isolated from the detection environment, thereby preventing its degradation.

After being immersed in the medium M, the analyte will combine with the organic semiconductor layer 3 to change its band gap, thereby affecting the gate voltage. This changes the output tension, indicating the presence of analyte in the medium M.

Compared with the configuration shown in FIG. 4A (prior art), the planar layer on the organic semiconductor layer 3 can eliminate the bulky reference electrode. This results in a full-wafer on-plane device that is easy to manufacture and operate. In addition, this allows for a larger voltage area, better control and stability of the gate voltage, thereby improving the repeatability of the measurement and the stability of the device.

As shown in Figure 5A, the reading device includes

i. Dual-channel analog front-end (analog-front-end, AFE), using a constant-voltage-constant-current (constant-voltage-constant-current, CVCC) bias circuit to ensure that it is between the sensing layer voltage change and output The direct relationship between operational amplifiers (LTC6079 Linear) and passive components;

ii. Four-channel 16-bit ADC (ADS1115 TI) for measuring the output of two sensors; and

iii. The voltage from the temperature measurement circuit, which is implemented as a voltage divider, in which the PT1000 sensor element is placed on a customized sensor platform, and its uncertainty is ± 0.3K, the uncertainty includes the component and the bias and readout circuit;

iv. Single-channel 16-bit DAC (MCP4725 Microchip), which can provide bias for the reference electrode;

v. DC-DC converter (TPS61220 TI), used to keep the voltage from the AAA battery pair constant;

vi. Low-noise reference voltage (LM4120-3.00 TI) for bias circuit, which drives the sensor for accurate analog signal measurement;

vii. Voltage converter (TL7660 TI), which reverses the positive signal into a coupled (viii) negative signal;

viii. The op-amp inverter (LTC2054 Linear) obtains the negative power from the noisy converter signal and inverts the stable positive reference signal;

ix. Analog switch (TS3A4741 TI), used to couple/decouple the analog front end (AFE); and

x. Microcontroller unit (RFD22301 RF Digital), which uses low energy Bluetooth (BLE) to control data acquisition and transmission with smart phones.

As shown in FIG. 5B, the mechanical sliding-open relationship is used to decouple the battery from the electronic device to avoid any current leakage during standby. The digital and analog power domains are separated to ensure that digital switching noise does not impair the noise characteristics of the bias circuit. The positive reference voltage provides a low-noise voltage source for CVCC. A simple operational amplifier inverter can also generate a negative reference voltage from the same positive reference voltage. The inverter takes the negative power supply voltage from the noisy negative potential converter, but inverts the stable positive reference voltage. The inverting operational amplifier was chosen for low power consumption and high rejection ratio.

This configuration allows the source node to swing to a negative potential.

Fig. 6 shows a schematic circuit diagram of the device of the present invention. The bias voltage of the transistor is realized by the CVCC circuit connected to the device.

As shown in Figure 7, the phone uses Bluetooth Low Energy (BLE) to wirelessly connect and communicate with the microcontroller. The BLE service scans the phone and connects it to the microcontroller and handles the data transmission. The user starts scanning from the main screen of the app, the app will automatically scan and connect to the correct And then continue to display data to the user. In the data view, the user can select the channel to be drawn. Once the channel is selected, the application will send a message to the microcontroller to start sending data. After the transmission is enabled, data can be recorded and stored directly in the file system of the phone. The application uses the model view controller (MVC) design pattern. The fragment class that acts as a controller coordinates commands between the user interface (view) and the model (BLE service and file system). The process is as follows: When the user starts scanning, the fragment starts the BLE service. The BLE service sends messages such as found devices or measurement data back to the fragment. If the user chooses to display the data, the fragment will modify the horizon accordingly; if the data storage is selected, the fragment will save the data with the help of the file system database. This segment continuously monitors BLE services and horizons. The microcontroller handles the communication between the AFE and Android applications, and it is designed to minimize the amount of data transmitted wirelessly. The embedded software is controlled by commands sent by the Android application via Bluetooth. These commands define which preset operation mode is used. The controller uses I2C to communicate with the analog switches, ADCs, and DACs that together constitute the AFE, and sets its operation according to the channel selected for monitoring purposes. When the system is not recording, the bias circuit is decoupled from other electronic devices. According to the channel to be measured, the ADC will be configured accordingly, and the bias and DAC will be turned on.

example

The invention is further illustrated by the following examples.

Example 1: Preparation of polyaniline layer

Polyaniline-dinonylnaphthalenesulfonic acid (PANI-DNNSA) was dissolved in chloroform to obtain a 1.5% by weight dispersion suitable for drip casting on the gate electrode. Deposit 8 μL of PANI-DNNSA solution on the gate electrode by drop casting and let it dry overnight. The gate can be placed in 70% ethanol 1 Minutes to remove excess DNNSA and improve the electrical activity of the material. The thickness of PANI-DNNSA is about 5 μm.

Example 2: K ⁺ selective thin film deposition

^{A K +} selective film can be deposited on the device to detect potassium ions in the medium. The film can be prepared by dissolving 1.57 mg potassium ionophore I, 0.78 mg KTFPB, 102.29 mg DOS and 52.24 mg PVC in 1 mL THF. The obtained solution was briefly shaken using a vortex mixer, and placed on a nutation platform overnight to ensure that the PVC was dissolved. The platform was cast with 17.2 μL of K ⁺ -selective film solution and left to dry overnight.

Example 3: Adding functional organic semiconductor metal interface to gate control for gas sensing

Materials and Methods

The device of the invention

Organic semiconductor layer: Polyaniline spin-coated on top of the gate

result

In FIGS. 8A and 8B, it is shown that an organic semiconductor layer is added on top of the gate. Since the semiconductor acts as a layer between the metal gate and the metal layer, a sensitive organic semiconductor/metal interface is generated. Semiconductors are known for their gas sensitivity. In this case, the gate voltage is affected by the organic semiconductor layer, especially if the work function of the semiconductor is affected by the analyte gas.

In FIG. 8A and FIG. 8B, the threshold voltage (Vth) change caused by the gas generated by burning rubber is shown. If there is no semiconductor layer, the gas cannot be detected. Figure 8B shows When the system is exposed back to clean air, the critical voltage value drops in the opposite direction. As shown in the figure, the gas detection of the device of the present invention is reversible.

Example 4: Application of organic semiconductor metal interface in gate voltage control-enzyme

reaction

Materials and Methods

The device of the invention

Organic semiconductor layer: Polyaniline spin-coated on top of the gate

result

Subsequently, an enzyme reaction was carried out, and Figure 9 shows the change of the drain current. The addition of lactic acid (analyte) causes a significant change in the current change. In the figure, the x-axis is a function of the increased gate voltage, and the y-axis is the drain current.

The solid line is the change in the drain current of the device functionalized with the enzyme. The dotted line is the change in the drain current of the device functionalized with enzyme when lactic acid is added to the medium. The segmented dashed line is the stable drain current change in the presence of lactic acid.

Example 5: Example of antibody antigen reaction:

Materials and Methods

The device of the invention

Organic semiconductor layer: Polyaniline spin-coated on top of the gate

The capture antibody is cured on the semiconductor layer together with the barrier layer, and then exposed to the analyte solution, followed by a washing step. Then, a monoclonal antibody conjugated to the enzyme substrate is added to the medium under study.

The experiment was replayed with a 20μm thick PANI:DNNSA layer and produced similar results, but with a slight decrease in sensitivity.

result

As shown in Figure 10, the diamond-shaped curve is the change in the drain current of the solution before adding the enzyme substrate. The curves marked by squares and triangles are the threshold voltage Vth for the first and second addition of the enzyme substrate at a concentration of ng/mL, respectively. In the figure, the x-axis is a function of the increased gate voltage, and the y-axis is the drain current.

The experiment was replayed with a 20μm thick PANI:DNNSA layer and produced similar results, but with a slight decrease in sensitivity.

Comparative example:

Except that the thickness of the PANI:DNNSA layer is set to 100 μm, both Example 4 and Example 5 are reproduced under the same conditions.

When the target analyte was added to the medium, no visible change in the drain current curve was observed.

1: device

2: Extended gate field effect transistor, transistor

3: Organic semiconductor layer

4: Metal layer, transistor

21: Extended gate, gold gate, extended gold gate

Claims (19)

A device (1) for detecting at least one analyte in a medium (M), the device (1) comprising: At least one extended gate field effect transistor (2), including at least one extended gate (21); At least one organic semiconductor layer (3) partially or completely covers the at least one extended gate electrode (21), the layer (3) includes at least one organic semiconductor material (31), and the thickness of the layer (3) is less than 50μm; and At least one metal layer (4) partially covering the at least one organic semiconductor layer (3); Wherein, the work function of the extended gate (21) is better than or equal to the work function of the at least one organic semiconductor material (3). The device (1) according to claim 1, wherein the difference between the work function of the at least one extended gate (21) and the work function of the at least one organic semiconductor material (31) is 0.5 to 1.5 eV between. The device (1) according to claim 1 or 2, wherein the extended gate field effect transistor (2) further comprises: Base (S); Source(s); Drain (d); and An insulator (I) electrically isolates the extended gate (21) from the substrate (S). The device (1) according to any one of claims 1 to 3, wherein the metal layer (4) extends from the source (s). The device (1) according to any one of claims 1 to 4, wherein the at least one metal layer (4) covers at least 50% of the surface of the at least one organic semiconductor layer (3). The device (1) according to any one of claims 1 to 5, wherein the at least one metal layer (4) covers less than 99% of the surface of the at least one organic semiconductor layer (3). The device (1) according to any one of claims 1 to 6, wherein the at least one organic semiconductor material (3) is a semiconductor polymer or oligomer. The device (1) according to claim 7, wherein the at least one organic semiconductor material (3) is a hole-conducting polymer. The device (1) according to claim 8, wherein the hole-conducting polymer is selected from the group consisting of polyaniline (PANI), polyacetylene, polypyrrole, polyphenylene, and polythiophene; an alkyl group, Aromatic, cyclic, cyclic ether, methoxy, ethoxy, ether, ester or any other modified polyaniline (PANI), polyacetylene, polypyrrole, polyphenylene, polythiophene; 3- and 3, Groups of 4-alkyl and aryl substituted pyrrole, N-alkylpyrrole, N-arylpyrrole, and poly 3,4-ethylenedioxythiophene or mixtures thereof. The device (1) according to claim 8 or 9, wherein the hole-conducting polymer is doped with acid, such as dinonylnaphthalenesulfonic acid, hydrochloric acid, sulfuric acid, toluenesulfonic acid, camphorsulfonic acid, alkyl Benzene sulfonic acid, any other compound capable of protonating polyaniline, or a mixture thereof. The device (1) according to any one of claims 1 to 10, wherein the at least one metal layer (4) includes at least one metal exhibiting a work function of 4 to 6 eV. The device (1) according to any one of claims 1 to 11, wherein the device (1) includes a plurality of extended gate field effect transistors (2), and each of the extended gate field effect transistors (2) It includes an extended gate (21) configured to detect different analytes in the medium (M). The device (1) according to any one of claims 1 to 12, wherein the at least one analyte is selected from the group comprising selective biomolecules, such as Antigens, antibodies, fragmented antibodies, nucleotides, nucleic acids, aptamers, cells, peptides, trace metals, pollutant molecules, pesticides, toxic chemicals, biological agents, imprints or ions. The device (1) according to any one of claims 1 to 13, wherein the device (1) is configured to determine the presence, concentration or level of at least one analyte in the medium (M). A system for detecting at least one analyte in a medium (M), the system comprising: At least one detection device (1), including: At least one extended gate field effect transistor (2), including at least one extended gate (21); At least one organic semiconductor layer (3) partially or completely covers the at least one extended gate electrode (21), the layer (3) includes at least one organic semiconductor material (31), and the thickness of the layer (3) is less than 50μm; and At least one metal layer (4) partially covering the at least one organic semiconductor layer (3); Wherein, the work function of the extended gate (21) is better than or equal to the work function of the at least one organic semiconductor material (31); A reading device configured to digitize the signal from the detection device (1); and The display device is configured to display the digitized signal to the user. The system according to claim 15, wherein the digitized signal is an indicator of the presence of at least one analyte in the medium (M), the concentration (C) or the level of at least one analyte in the medium (M) . The system according to claim 15 or 16, wherein the at least one analyte system is selected from the group comprising selective biomolecules, such as antigens, antibodies, fragmented antibodies, nucleotides, Nucleic acids, aptamers, cells, peptides, trace metals, pollutant molecules, pesticides, toxic chemicals, biological agents, imprints or ions. A method for detecting at least one analyte in a medium (M), the method comprising the following steps: A detection device (1) is provided, and the detection device (1) includes: At least one extended gate field effect transistor (2), including at least one extended gate (21); At least one organic semiconductor layer (3) partially or completely covering the at least one extended gate electrode (21), the layer (3) comprising at least one organic semiconductor material (31); and At least one metal layer (4) partially covering the at least one organic semiconductor layer (31); Wherein, the work function of the extended gate (21) is better than or equal to the work function of the at least one organic semiconductor material (31); Depositing a predetermined volume of the medium (M) on the at least one extended gate (21); and At least one analyte in the medium (M) is detected. A method for detecting at least one analyte in a medium (M), the method comprising the following steps: Provide a detection system, which includes: At least one detection device (1), including: At least one extended gate field effect transistor (2), including at least one extended gate (21); At least one organic semiconductor layer (3) partially or completely covers the at least one extended gate electrode (21), the layer (3) includes at least one organic semiconductor material (31), and the thickness of the layer (3) is less than 50μm; and At least one metal layer (4) partially covering the at least one organic semiconductor layer (3); Wherein, the work function of the extended gate (21) is better than or equal to the work function of the at least one organic semiconductor material (31); A reading device configured to digitize the signal from the detection device (1); and The display device is configured to display the digitized signal to the user; Depositing a predetermined volume of the medium (M) on the at least one extended gate (21); According to the detection of the at least one analyte in the medium (M), a voltage signal is generated from the detection device (1); Sending the voltage signal to the reading device; Digitize the voltage signal; Process the digitized signal obtained; Sending the digitized signal to the display device; and The digitized signal is displayed to the user.

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