TW202106933A - Substrate processing apparatus - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 433
- 239000007788 liquid Substances 0.000 claims abstract description 470
- 238000007599 discharging Methods 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims description 357
- 238000005342 ion exchange Methods 0.000 claims description 6
- 239000000284 extract Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 108
- 239000013589 supplement Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 230000000694 effects Effects 0.000 description 14
- 238000005406 washing Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 230000009471 action Effects 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 238000009736 wetting Methods 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明係關於一種基板處理裝置。The present invention relates to a substrate processing device.
為了鍍覆基板表面而使用鍍覆裝置。鍍覆裝置具備保持鍍覆液之鍍覆槽,藉由使基板浸漬於鍍覆液而對基板實施鍍覆。鍍覆裝置係將基板保持於基板固持器,再將基板連同基板固持器搬送至鍍覆槽而浸漬於鍍覆液。In order to plate the surface of the substrate, a plating device is used. The plating apparatus is equipped with a plating tank which holds a plating solution, and performs plating on the substrate by immersing the substrate in the plating solution. The plating device holds the substrate in the substrate holder, and then transports the substrate together with the substrate holder to the plating tank and is immersed in the plating solution.
如此搬送基板,不過,將基板固持器收容於鍍覆槽時,基板固持器會與鍍覆液之液面相撞而可能濺起鍍覆液。此外,從鍍覆槽取出基板固持器時,鍍覆液會附著於基板固持器,亦可能從鍍覆槽帶出鍍覆液。此時,在基板固持器搬送中,鍍覆液可能從基板固持器滴落。因此,因為鍍覆液濺起及帶出(拖曳(Drag out))而鍍覆液流出鍍覆槽周圍時,可能引起鍍覆裝置的腐蝕及污染。再者,如此從鍍覆槽帶出鍍覆液(拖曳)也會造成經濟上的損失。The substrate is transported in this way, but when the substrate holder is accommodated in the plating tank, the substrate holder may collide with the liquid surface of the plating solution, and the plating solution may be splashed. In addition, when the substrate holder is taken out from the plating tank, the plating solution may adhere to the substrate holder, and the plating solution may also be taken out from the plating tank. At this time, during transportation of the substrate holder, the plating solution may drip from the substrate holder. Therefore, when the plating solution flows out around the plating tank due to splashing and carrying out (drag out) of the plating solution, corrosion and pollution of the plating device may be caused. Furthermore, such a plating solution (dragging) from the plating tank will also cause economic losses.
此外,鍍覆裝置為了縮短處理基板需要的時間,以提高處理量,需要高速搬送基板固持器。但是,愈高速搬送基板固持器,可能因液體濺起及帶出(拖曳)導致鍍覆液的流出量增加,而更凸顯上述的問題。因而,要求即使高速搬送基板固持器時仍可減少鍍覆液之流出量的鍍覆裝置。此種鍍覆裝置之一例記載於專利文獻1。In addition, in order to shorten the time required to process the substrate and increase the throughput, the plating apparatus requires a substrate holder to be transported at a high speed. However, the faster the substrate holder is transferred, the outflow of the plating solution may increase due to splashing and carrying (dragging) of the liquid, which highlights the above-mentioned problems. Therefore, there is a demand for a plating apparatus that can reduce the outflow of the plating solution even when the substrate holder is transported at a high speed. An example of such a plating apparatus is described in Patent Document 1.
專利文獻1中揭示有具備如其圖9所示之下端部係末稍尖銳形狀之基板固持器的鍍覆裝置。該鍍覆裝置將基板固持器收容於鍍覆槽時,可藉由末稍尖銳形狀防止液體濺起。此外,該鍍覆裝置從鍍覆槽取出基板固持器時,鍍覆液可藉由末稍尖銳形狀而迅速從基板固持器落下。亦即,該鍍覆裝置可使附著於基板固持器之大部分的鍍覆液落入鍍覆槽。換言之,該鍍覆裝置可減少鍍覆液之帶出量。 [先前技術文獻] [專利文獻]Patent Document 1 discloses a plating apparatus provided with a substrate holder having a slightly sharp bottom end as shown in FIG. 9. When the plating device accommodates the substrate holder in the plating tank, it can prevent the liquid from splashing by the sharp shape of the tip. In addition, when the plating device takes out the substrate holder from the plating tank, the plating solution can quickly drop from the substrate holder through the tip of the sharp shape. That is, the plating device can allow most of the plating solution attached to the substrate holder to fall into the plating tank. In other words, the plating device can reduce the amount of plating solution carried out. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2015-131979號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-131979
(發明所欲解決之問題)(The problem to be solved by the invention)
如上述,專利文獻1中記載之鍍覆裝置可減少鍍覆液從鍍覆槽之流出量。但是,專利文獻1中記載之鍍覆裝置雖然對鍍覆液之流出有一定的效果,然而並未完全防止鍍覆液之流出。換言之,鍍覆液仍可能流出鍍覆槽外部。As described above, the plating device described in Patent Document 1 can reduce the amount of plating solution flowing out of the plating tank. However, although the plating device described in Patent Document 1 has a certain effect on the outflow of the plating solution, it does not completely prevent the outflow of the plating solution. In other words, the plating solution may still flow out of the plating tank.
此外,此種液體濺起及液體帶出之問題並非限於鍍覆裝置的鍍覆槽之問題。鍍覆裝置除了鍍覆槽之外還具備各種處理槽,也是此等處理槽中同樣會發生的問題。再者,該問題不只是鍍覆裝置,也是將基板固持器搬送至處理槽之全部基板處理裝置會發生的問題。In addition, the problem of liquid splashing and liquid carrying is not limited to the problem of the plating tank of the plating device. In addition to the plating tank, the plating device also has various treatment tanks, which is also a problem that also occurs in these treatment tanks. Furthermore, this problem is not only a plating device, but also a problem that occurs in all substrate processing devices that transport the substrate holder to the processing tank.
因此,本發明之目的係鑑於上述問題,而提供一種在搬送基板固持器時,可減少液體從處理槽之流出量的基板固持器之取出方法、基板固持器之收容方法及基板處理裝置。 (解決問題之手段) (形態1)Therefore, the object of the present invention is to provide a method for removing a substrate holder, a method for accommodating a substrate holder, and a substrate processing apparatus that can reduce the flow of liquid from the processing tank when the substrate holder is transported in view of the above-mentioned problems. (Means to solve the problem) (Form 1)
形態1的基板固持器之取出方法,係使用用於保持基板之基板固持器及用於處理前述基板之處理槽,從保持了液體之前述處理槽取出至少一部分浸漬於前述液體的前述基板固持器,且具有以下工序:使前述基板固持器向上方向移動,而從前述液體之液中取出前述基板固持器;及使保持於前述處理槽之前述液體的液面上升;前述使液面上升之工序係在從前述液體之液中取出前述基板固持器的工序之期間進行。The method for removing the substrate holder of the first form is to use a substrate holder for holding a substrate and a processing tank for processing the substrate, and at least a part of the substrate holder immersed in the liquid is taken out from the processing tank holding the liquid And has the following steps: moving the substrate holder upward to remove the substrate holder from the liquid; and raising the liquid level of the liquid held in the processing tank; the step of raising the liquid level It is performed during the process of removing the substrate holder from the liquid.
一般而言,從液中取出基板固持器時,基板固持器之表面會附著液體。此外,取出基板固持器時,當基板固持器之下端位於比液體的液面稍高時,會在基板固持器之下端與液面之間形成液柱。而後,附著於基板固持器之液體可通過液柱而迅速返回處理槽。但是,若基板固持器之下端從液體之液面離開一定距離以上時,液柱則消失。採用形態1的基板固持器之取出方法時,從液體之液中取出基板固持器時液體的液面上升。亦即,比液面不上升時可長時間維持液柱,可使附著於基板固持器之更多液體通過液柱而迅速返回處理槽。換言之,形態1的基板固持器之取出方法比液面不上升時,可減少搬送基板固持器時液體從處理槽的流出量。 (形態2)Generally speaking, when the substrate holder is removed from the liquid, the surface of the substrate holder will adhere to the liquid. In addition, when the substrate holder is taken out, when the lower end of the substrate holder is slightly higher than the liquid level of the liquid, a liquid column will be formed between the lower end of the substrate holder and the liquid surface. Then, the liquid attached to the substrate holder can pass through the liquid column and quickly return to the processing tank. However, if the lower end of the substrate holder is more than a certain distance away from the liquid surface, the liquid column disappears. When using the method of removing the substrate holder of form 1, the liquid level of the liquid rises when the substrate holder is taken out of the liquid. That is, the liquid column can be maintained for a long time than when the liquid level does not rise, and more liquid attached to the substrate holder can pass through the liquid column and quickly return to the processing tank. In other words, the method of taking out the substrate holder of the first aspect can reduce the amount of liquid outflow from the processing tank when the substrate holder is transported compared to when the liquid level is not raised. (Form 2)
形態2之基板處理裝置具備:基板固持器,其係用於保持基板;處理槽,其係用於保持液體;液體供給配管,其係用於在前述處理槽中供給前述液體;供給閥,其係安裝於前述液體供給配管,用於調整流經前述液體供給配管之前述液體的流量;液體排出部,其係用於從前述處理槽排出前述液體;傳輸機,其係用於握持收容於前述處理槽之前述基板固持器,使其向上方向移動,而從前述處理槽取出前述基板固持器;及控制部;前述控制部在前述傳輸機從前述液體之液中取出前述基板固持器時,係以使保持於前述處理槽之前述液體的液面上升,同時前述基板固持器之下端部從前述液體之液面離開的方式,控制前述供給閥及前述液體排出部中的至少一方。The substrate processing apparatus of form 2 includes: a substrate holder for holding a substrate; a processing tank for holding a liquid; a liquid supply pipe for supplying the liquid in the processing tank; a supply valve, which It is installed in the liquid supply pipe for adjusting the flow rate of the liquid flowing through the liquid supply pipe; the liquid discharge part is used to discharge the liquid from the processing tank; the conveyor is used to hold and house The substrate holder of the processing tank is moved upward to take out the substrate holder from the processing tank; and a control part; the control part, when the conveyor takes out the substrate holder from the liquid, At least one of the supply valve and the liquid discharge part is controlled such that the liquid level of the liquid held in the processing tank is raised while the lower end of the substrate holder is separated from the liquid level of the liquid.
採用形態2之基板處理裝置時,與形態1的基板固持器之取出方法同樣地,在從液中取出基板固持器時,液體之液面上升。因此,該基板處理裝置比液面不上升時,可減少搬送基板固持器時液體從處理槽之流出量。 (形態3)In the case of the substrate processing apparatus of the form 2, the liquid level rises when the substrate holder is taken out from the liquid in the same way as the method of taking out the substrate holder of the form 1. Therefore, the substrate processing apparatus can reduce the outflow amount of the liquid from the processing tank when the substrate holder is transported when the liquid level is not raised. (Form 3)
形態3的基板固持器之收容方法,係使用用於保持基板之基板固持器及用於處理前述基板之處理槽,在保持了液體之前述處理槽中,以至少一部分浸漬於前述液體之方式收容前述基板固持器,且具有以下工序:使前述基板固持器向下方向移動,而將前述基板固持器收容於前述處理槽;及使保持於前述處理槽之前述液體的液面下降;當前述基板固持器之下端與前述液面接觸時,至少進行使前述液面下降之工序。The storage method of the substrate holder of form 3 uses the substrate holder for holding the substrate and the processing tank for processing the substrate, and the processing tank holding the liquid is accommodated in such a way that at least part of it is immersed in the liquid The substrate holder has the following steps: moving the substrate holder downward to accommodate the substrate holder in the processing tank; and lowering the liquid level of the liquid held in the processing tank; when the substrate When the lower end of the holder is in contact with the liquid surface, at least the step of lowering the liquid surface is performed.
採用形態3的基板固持器之收容方法時,當基板固持器之下端與液面接觸時液面下降。因而,比液面不下降時減少基板固持器與液面相撞時的撞擊,而減少液體濺起。亦即,形態3的基板固持器之收容方法比液面不下降時,可減少搬送基板固持器時液體從處理槽之流出量。 (形態4)When the substrate holder storage method of form 3 is adopted, the liquid level drops when the lower end of the substrate holder contacts the liquid surface. Therefore, when the specific liquid level is not lowered, the impact when the substrate holder collides with the liquid surface is reduced, and liquid splashing is reduced. That is, the storage method of the substrate holder of form 3 can reduce the amount of liquid outflow from the processing tank when the substrate holder is transported when the liquid level is not lowered. (Form 4)
形態4之基板處理裝置具備:基板固持器,其係用於保持基板;處理槽,其係用於保持液體;液體排出部,其係用於從前述處理槽排出前述液體;傳輸機,其係用於握持基板固持器使其向下方向移動,並將前述基板固持器收容於前述處理槽;及控制部;前述控制部在前述基板固持器之下端與液面接觸時,係以至少使前述液面下降之方式,控制前述液體排出部。The substrate processing apparatus of form 4 includes: a substrate holder for holding a substrate; a processing tank for holding liquid; a liquid discharge portion for discharging the liquid from the processing tank; and a conveyor, which is It is used to hold the substrate holder to move downward, and accommodate the substrate holder in the processing tank; and a control part; when the lower end of the substrate holder is in contact with the liquid surface, the control part is used to make at least The manner in which the liquid level is lowered controls the liquid discharge portion.
採用形態4之基板處理裝置時,與形態3的基板固持器之收容方法同樣地,當基板固持器之下端與液面接觸時,液面下降。因此,形態4之基板處理裝置比液面不下降時,可減少搬送基板固持器時液體從處理槽之流出量。In the case of the substrate processing apparatus of the form 4, the liquid level drops when the lower end of the substrate holder is in contact with the liquid surface in the same way as the storage method of the substrate holder of the form 3. Therefore, in the substrate processing apparatus of the fourth aspect, when the specific liquid level is not lowered, the outflow amount of the liquid from the processing tank when the substrate holder is transported can be reduced.
以下,參照圖式說明本發明之實施形態。在以下說明之圖式中,對於相同或相當之元件註記相同符號,並省略重複之說明。 [第一種實施形態] <構成>Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or equivalent elements are marked with the same symbols, and repeated descriptions are omitted. [The first embodiment] <Constitution>
圖1係第一種實施形態之鍍覆裝置的俯視圖。參照圖1,鍍覆裝置100具備:暫存盒124、預濕槽126、預浸槽128、第一洗淨槽130a、噴吹槽132、第二洗淨槽130b、複數個鍍覆槽220、溢流槽260及基板搬送裝置140。另外,預濕槽126、預浸槽128、第一洗淨槽130a、噴吹槽132、第二洗淨槽130b及鍍覆槽220可稱為處理槽160。鍍覆裝置100之一例係濕式且縱型之電解鍍覆裝置。鍍覆裝置100係藉由以各處理槽160對基板W進行已知之處理,而對基板W進行鍍覆處理的裝置。Fig. 1 is a top view of the plating apparatus of the first embodiment. 1, the
以下,說明鍍覆裝置100之各元件。
暫存盒124係進行保管及暫時放置基板固持器180之場所。預濕槽126保持有純水。預濕槽126藉由將基板W浸漬於純水而濕潤表面,來改善基板W之親水性。預浸槽128保持有硫酸。預浸槽128具有藉由使基板W浸漬於硫酸,而蝕刻除去形成於基板W表面之種層等導電層表面的氧化膜之功能。第一洗淨槽130a保持有洗淨液(純水等)。第一洗淨槽130a係以洗淨液洗淨預浸後之基板W及基板固持器180。噴吹槽132具有藉由將氮噴射至收容於槽內部之基板W而使基板W乾燥的功能。第二洗淨槽130b保持有洗淨液(純水等)。第二洗淨槽130b以洗淨液洗淨鍍覆後之基板W及基板固持器180 。複數個鍍覆槽220相互鄰接配置。溢流槽260以包圍複數個鍍覆槽220之外周的方式配置。另外,鍍覆槽220及溢流槽260之詳細構成於後述。Hereinafter, each element of the
基板搬送裝置140具備水平軌條142及2個傳輸機144a、144b。另外,傳輸機144a及傳輸機144b具有相同構造,因此可分別簡稱為傳輸機144。基板搬送裝置140中一個例子係採用線性馬達方式。水平軌條142一個例子為鄰接於直線狀排列之暫存盒124、預濕槽126、預浸槽128、第一洗淨槽130a、噴吹槽132、第二洗淨槽130b及鍍覆單元200而直線狀延伸。The
傳輸機144a、144b分別可沿著水平軌條142而移動。傳輸機144a、144b具有藉由現有之方法在暫存盒124、預濕槽126、預浸槽128、第一洗淨槽130a、噴吹槽132、第二洗淨槽130b、及鍍覆槽220之間搬送基板固持器180的功能。另外,鍍覆裝置100只要可在各處理槽160之間搬送基板固持器180,亦可不具備傳輸機144b,而僅具備傳輸機144a。此外,傳輸機144a、144b不僅搬送保持了基板W的基板固持器180,還會搬送未保持基板W之基板固持器180。The
圖2係顯示鍍覆裝置100之鍍覆槽220的周邊之放大剖面圖。參照圖2說明鍍覆槽220更詳細之構成。另外,圖1係顯示鍍覆裝置100具有複數個鍍覆槽220之例。另外,圖2係為了簡化圖示而顯示鍍覆裝置100具有1個鍍覆槽220之例。FIG. 2 is an enlarged cross-sectional view showing the periphery of the
參照圖2,鍍覆裝置100之一個例子為進一步具備:液體供給配管302、供給閥304、液體排出配管306、放洩閥(dump valve)308、陽極固持器310、陽極312、基板固持器180、鍍覆電源204、2個泵浦314a、314b、3個配管316、318、320、排出槽322及控制部400。另外,液體排出配管306及放洩閥308包含於液體排出部330。2, an example of the
此外,鍍覆槽220具有:調整板222(Regulation Plate)、隔膜(membrane)224、陽極室226、陰極室228、高水位感測器232、低水位感測器234。鍍覆槽220之一個例子係由開放上方之長方體形狀的容器構成。鍍覆槽220係以將其內部分割為2之方式在大致中央配置有調整板222。藉此,鍍覆槽220之內部分割成陽極室226與陰極室228。此外,調整板222由電介質構成,並在中央具有圓形之開口223。而後,開口223上貼合有隔膜224。隔膜224係具有不使鍍覆液通過,而可在陰極室228之鍍覆液與陽極室226的鍍覆液之間離子交換功能的離子交換膜。因而,陽極室226側之鍍覆液與陰極室228側的鍍覆液彼此無法在收容之室內自由來去。In addition, the
高水位感測器232安裝於鍍覆槽220上端之開口部附近,並具有以現有之方法檢知鍍覆液之液面L是否在比高度h1高的位置之功能。此外,低水位感測器234安裝於鍍覆槽220之底面附近,具有以現有之方法檢知鍍覆液之液面L是否在比高度h2高的位置之功能。The high
陽極固持器310在保持了陽極312之狀態下收容於陽極室226。陽極312之一個例子為使用含磷銅。基板固持器180係以將基板W配置於與陽極312相對位置之方式收容於陰極室228。另外,基板固持器180藉由傳輸機144(參照圖1)而從鍍覆槽220正上方搬送至圖示的位置。鍍覆電源204電性連接基板W及陽極312,並在基板W與陽極312之間通過電流。藉此,在基板W表面形成鍍覆膜(銅膜)。The
溢流槽260之一個例子係由開放了上方之長方體形狀的容器而構成,且內部收容有鍍覆槽220。換言之,溢流槽260係以包圍鍍覆槽220之外周的方式配置。因而,溢流槽260可接受從鍍覆槽220溢出之鍍覆液。更詳細而言,溢流槽260藉由分隔板(省略圖示)而分割成第一部分262與第二部分264。第一部分262可接受從陰極室228所溢出之鍍覆液,另外,第二部分264可接受從陽極室226所溢出之鍍覆液。An example of the
液體供給配管302使泵浦314a與陰極室228連通。此外,配管316使泵浦314a與第一部分262連通。因而,泵浦314a可將滯留於第一部分262之鍍覆液經由配管316及液體供給配管302而壓送至陰極室228。亦即,液體供給配管302係使用於為了對陰極室228供給鍍覆液。換言之,鍍覆液係在陰極室228、第一部分262、配管316、泵浦314a及液體供給配管302之間循環。供給閥304安裝於液體供給配管302。供給閥304具有調整流經液體供給配管302之鍍覆液流量的功能。一個例子係泵浦314a在基板固持器180並未浸漬於鍍覆槽220時,以及在鍍覆基板W的期間這兩個時候至少其中之一,使流經配管316之流量變成第一循環流量的方式運轉。The
配管318使泵浦314b與陽極室226連通。此外,配管320使泵浦314b與第二部分264連通。藉此,鍍覆液可在陽極室226、第二部分264、配管320、泵浦314b及配管318之間循環。The
液體排出配管306安裝於鍍覆槽220,並使排出槽322與陰極室228連通。藉此,液體排出配管306係使用於為了從鍍覆槽220之陰極室228排出鍍覆液。放洩閥308安裝於液體排出配管306。放洩閥308具有調整流經液體排出配管306之鍍覆液流量的功能。排出槽322具有暫時貯存鍍覆液之功能。排出槽322中經由液體排出配管306供給從陰極室228所排出的鍍覆液。此外,暫時貯存於排出槽322之鍍覆液藉由泵浦(省略圖示)而返回第一部分262。The
控制部400具有藉由控制傳輸機144(參照圖1)而使傳輸機144移動的功能。此外,控制部400具有調整供給閥304及放洩閥308之開閉的功能。再者,藉由控制供給閥304、泵浦314a,具有控制從液體供給配管302供給至陰極室228之鍍覆液流量的功能。
<基板固持器之收容方法>The
其次,就鍍覆裝置100中之基板固持器180的收容方法依序說明動作、效果、補充。
〈動作〉Next, the operations, effects, and supplements will be described in order of the method of accommodating the
參照圖3及圖4說明將基板固持器180收容至鍍覆槽220之動作。圖3係顯示鍍覆裝置100在收容基板固持器180時一種控制處理步驟的流程圖,圖4係進行圖3所示之控制時,鍍覆裝置100之動作的說明圖。另外,本文中所謂將基板固持器180收容至鍍覆槽220,是指收容至鍍覆槽220之陰極室228,所謂從鍍覆槽220取出基板固持器180,是指從鍍覆槽220之陰極室228取出。The operation of accommodating the
收容基板固持器180時,首先,在步驟S110中,控制部400係以握持基板固持器180之傳輸機144來到鍍覆槽220正上方的方式使傳輸機144移動(參照圖4A)。此時,開放供給閥304而封閉放洩閥308。亦即,鍍覆液係藉由液體供給配管302而供給至鍍覆槽220,不過並未藉由液體排出配管306而從鍍覆槽220排出。藉此,鍍覆槽220係溢流鍍覆液。When the
接著,控制部400在步驟S120中使鍍覆液之液面L下降。具體而言,控制部400封閉供給閥304及開放放洩閥308。接著,控制部400在步驟S130中使傳輸機144下降(參照圖4B)。藉此,傳輸機144下降,而基板固持器180與液面L接觸。(參照圖4C)。另外,控制部400在基板固持器180之下端與液面L接觸時,係以液面L下降之方式進行步驟S120及步驟S130的處理。換言之,控制部400在基板固持器180之下端與液面L接觸時,係以使液面L下降之方式來控制放洩閥308。另外,控制部400亦可變換步驟S120與步驟S130之處理順序。Next, the
接著,控制部400在步驟S140中推斷基板固持器180與液面L之接觸。該接觸之推斷的一個例子為依據基板固持器180之下降速度、液面L之下降速度、放洩閥308的開放時間點(時間點, timing)、傳輸機144之下降時間點等來進行。因為若已知基板固持器180之下降速度、液面L之下降速度、放洩閥308之開放時間點及傳輸機144的下降時間點,即瞭解基板固持器180與液面L的接觸時間點。另外,基板固持器180之下降速度、液面L之下降速度、放洩閥308之開放時間點及傳輸機144的下降時間點,若安裝鍍覆裝置100時亦可進行量測及設定。此外,控制部400在傳輸機144來到指定之高度時,亦可推斷為基板固持器180與液面L已經接觸。Next, the
接著,控制部400在步驟S140之處理結束後,在步驟S150中使鍍覆液之液面L上升(參照圖4D)。具體而言,控制部400封閉放洩閥308,並且開放供給閥304。Next, after the processing of step S140 is completed, the
而後,當基板固持器180到達鍍覆槽220中之指定位置(圖2的位置)時,在步驟160中完成將基板固持器180收容至鍍覆槽220(參照圖4E)。換言之,控制部400進行之收容基板固持器180的控制處理完成。Then, when the
另外,然後,鍍覆液再度從鍍覆槽220溢流,並在鍍覆槽220內部對基板W實施鍍覆處理。此外,亦可在收容基板固持器180完成後,傳輸機144釋放所握持之基板固持器180,而搬送其他基板固持器180。
〈效果〉In addition, after that, the plating solution overflows from the
鍍覆裝置100如上述,當基板固持器180之下端與液面L接觸時,液面L下降。因而,比液面L不下降時減少基板固持器180與液面L碰撞時的撞擊,且減少液體濺起。亦即,鍍覆裝置100於搬送基板固持器180時可減少鍍覆液從鍍覆槽220之流出量。
(就基板固持器之收容方法的補充)The
以下,就鍍覆裝置100中的基板固持器180之收容方法加以補充。
(補充1)
控制部400亦可在基板固持器180接觸於鍍覆液的液面L之前,亦即,使基板固持器180向下方向移動後,且在液面L與基板固持器180接觸之前,以基板固持器180之下降速度減速的方式來控制傳輸機144。藉此,可進一步減少基板固持器180與液面L碰撞時的撞擊,進一步減少液體濺起。亦即,鍍覆裝置100可進一步減少鍍覆液從鍍覆槽220之流出量。
(補充2)Hereinafter, the method of accommodating the
控制部400亦可在使鍍覆液之液面L下降時,以使液面L僅下降至不致露出隔膜224之高度的方式來控制放洩閥308。藉此,可防止隔膜224露出於大氣中而老化。
(補充3)The
此外,鍍覆槽220亦可不具隔膜224(參照圖2)。此時,控制部400亦可在使保持於鍍覆槽220之鍍覆液的液面L下降時,係以僅使液面L下降至不致露出陽極312之高度的方式來控制放洩閥308。藉此,可防止陽極312露出於大氣中而老化。
(補充4)In addition, the
此外,控制部400亦可在使液面L下降時,以液體排出配管306排出將基板固持器180收容於鍍覆槽220後與基板固持器180浸漬於鍍覆液之部分的容積相等體積之鍍覆液的方式來控制放洩閥308。In addition, when the liquid level L is lowered, the
將基板固持器180收容於鍍覆槽220時,液面L依基板固持器180浸漬於鍍覆液之部分的容積而上升。換言之,藉由控制部400進行上述之控制,當收容基板固持器180完成時,鍍覆槽220係裝滿鍍覆液。因而,收容基板固持器180後之鍍覆液並無溢流的時間。
(補充5)When the
控制部400亦可在使用高水位感測器232確認液面L比高度h1低後,以基板固持器180之下端與液面L接觸的方式來控制傳輸機144、供給閥304及放洩閥308。藉此,控制部400在基板固持器180之下端與液面L接觸前,可使用高水位感測器232確實確認液面L正確下降。另外,高水位感測器232為了確認液面L之下降,液面L需要下降至比高度h1下方。亦即,高度h1係在鍍覆槽220中比鍍覆液溢流時之液面L低的高度,且係比液面L下降而變成最低時之液面L高的高度。
(補充6)After confirming that the liquid level L is lower than the height h1 using the high
控制部400係使鍍覆液之液面L上升或下降,不過,亦可以上述方法以外之方法使其上升或下降。例如,控制部400不封閉供給閥304,而僅開放放洩閥308,亦可使液面L下降。此外,控制部400亦可在開放了供給閥304之狀態下,開放放洩閥308,於液面L下降後,藉由封閉放洩閥308而使液面L上升。換言之,控制部400亦可不控制供給閥304而使液面L上升。
<基板固持器之取出方法>The
其次,就鍍覆裝置100中取出基板固持器180之方法依序說明動作、效果、補充。
〈動作〉Next, the method of taking out the
首先,參照圖5及圖6說明對基板W之鍍覆處理結束後,從鍍覆槽220取出基板固持器180之動作。圖5係顯示從鍍覆裝置100取出基板固持器180時一種控制處理步驟的流程圖,圖6係進行圖5所示之控制時,鍍覆裝置100之動作的說明圖。First, with reference to FIGS. 5 and 6, the operation of taking out the
對基板W鍍覆處理結束時,首先,在步驟S310中,控制部400係以傳輸機144來到鍍覆槽220之正上方的方式使傳輸機144移動(參照圖6A)。接著,控制部400於傳輸機144移動時,在步驟S320中使鍍覆液之液面L下降(參照圖6A)。具體而言,控制部400封閉供給閥304及開放放洩閥308。另外,控制部400亦可將步驟S310與步驟S320之處理變換順序。When the plating process on the substrate W is completed, first, in step S310, the
接著,控制部400在步驟S330中,使傳輸機144下降(參照圖6B)。傳輸機144下降完成時握持基板固持器180。接著,控制部400在步驟S340中使用高水位感測器232確認液面L之下降。換言之,控制部400藉由確認液面L比高度h1下方,來確認液面L的下降。Next, the
接著,當液面L充分下降後,控制部400在步驟S350中,使鍍覆液之液面L上升(參照圖6C)。具體而言,控制部400封閉放洩閥308及開放供給閥304,而使泵浦314a(參照圖2)增加鍍覆液之供給量。一個例子為泵浦314a係以比第一循環流量增大鍍覆液之供給量(循環流量)的方式運轉。接著,控制部400在步驟S360中,使傳輸機144上升(參照圖6C)。藉此,被傳輸機144握持之基板固持器180上升。換言之,控制部400在傳輸機144從鍍覆液之液中取出基板固持器180時,使保持於鍍覆槽220之鍍覆液的液面L上升,同時以基板固持器180之下端部從鍍覆液之液面L離開的方式控制供給閥304。另外,控制部400使液面L上升之時間點,一個例子為依據基板固持器180浸漬於鍍覆液之深度、在步驟S320中下降液面L時之液面L的高度、基板固持器180之上升速度、泵浦314a供給鍍覆液之量等而事先決定,並以時間進行管理。Next, when the liquid level L is sufficiently lowered, the
接著,基板固持器180之下端從鍍覆液離開而來到比液面L高的位置時,控制部400係以加快基板固持器180向上方向之移動速度的方式控制傳輸機144(步驟S370)。而後,傳輸機144完全上升時,在步驟S380中完成基板固持器180之取出動作。(參照圖6D)。
〈效果〉
(第一效果)Next, when the lower end of the
過去之鍍覆裝置在取出基板固持器時,鍍覆槽係使鍍覆液溢流。亦即,取出基板固持器時,液面係一定高度。但是,鍍覆裝置100係在從鍍覆液之液中取出基板固持器180時液體的液面L上升。藉此,鍍覆裝置100可比過去之鍍覆裝置於搬送基板固持器180時減少鍍覆液從鍍覆槽220之流出量。使用圖7說明其理由如下。In the past plating device, when the substrate holder is taken out, the plating tank overflows the plating solution. That is, when the substrate holder is taken out, the liquid level is at a certain height. However, the
圖7係顯示從鍍覆液取出基板固持器180時,液面L及基板固持器180之部分的放大圖。圖7係基板固持器180之下端位於比鍍覆液的液面L稍上方。此時,在基板固持器180的下端與液面L之間形成液柱LC。而後,附著於基板固持器180之鍍覆液可通過液柱LC迅速返回鍍覆槽220。但是,若基板固持器180之下端從鍍覆液之液面L離開一定距離以上時,則液柱LC消失。FIG. 7 is an enlarged view showing the liquid level L and the part of the
此處,採用取出鍍覆裝置100中之基板固持器180的方法時,如上述,從鍍覆液之液中取出基板固持器180時,液體之液面L上升。亦即,比起液面L不上升時,長時間維持液柱LC,附著於基板固持器180之更多鍍覆液可通過液柱LC迅速返回鍍覆槽220。換言之,鍍覆裝置100比過去之鍍覆裝置在搬送基板固持器180時,可減少鍍覆液從鍍覆槽220之流出量。Here, when the method of taking out the
另外,液面L之上升速度愈接近基板固持器180的取出速度,愈可長時間維持液柱LC,而減少鍍覆液從鍍覆槽220之流出量。換言之,液面L之上升速度愈遠離基板固持器180的取出速度,鍍覆液從鍍覆槽220之流量愈增加。亦即,鍍覆裝置100在取出基板固持器180時,不論液面L之上升速度,只要可使液面L稍微上升,即可比液面不上升之過去的鍍覆裝置減少鍍覆液從鍍覆槽220之流出量。
(第二效果)In addition, the closer the rising speed of the liquid level L is to the take-out speed of the
此外,如上述,基板固持器180之下端從鍍覆液離開而來到比液面L高的位置時,控制部400係以加速基板固持器180向上方向之移動速度的方式控制傳輸機144(步驟S370)。藉此,在形成了液柱LC時,因為基板固持器180從液面L緩慢離開,所以鍍覆裝置100可長時間維持液柱LC。此外,鍍覆裝置100於液柱LC消失後,可以更高速地使基板固持器180上升。亦即,可減少鍍覆液從鍍覆槽220之流出量,並且加快基板固持器180之搬送速度。
<就基板固持器之取出方法的補充>In addition, as described above, when the lower end of the
以下,就鍍覆裝置100中的基板固持器180之取出方法加以補充。
(補充1)
控制部400在步驟S340中,使用高水位感測器232確認液面L之下降。但是,鍍覆裝置100亦可取代高水位感測器232,而具備專用於確認液面L下降之水位感測器。控制部400藉由使用專用之水位感測器確認液面L的下降,可在液面L下降時排出必要充分之量的鍍覆液。藉此,可防止發生過度排出鍍覆液,再度需要必要以上之長時間使鍍覆液溢流的問題。
(補充2)Hereinafter, the method of taking out the
此外,控制部400使液面L下降時,控制部400亦可以僅使液面L下降至不致露出隔膜224之高度的方式來控制放洩閥308。
(補充3)In addition, when the
此外,鍍覆槽220不具隔膜224情況下,控制部400在使液面L下降時,亦可以僅使液面L下降至不致露出陽極312之高度的方式來控制放洩閥308。
(補充4)In addition, when the
此外,控制部400亦可將鍍覆液之液面L採用上述之(動作)中記載的方法以外之方法進行上升或下降。例如,控制部400亦可藉由不封閉供給閥304,而僅開放放洩閥308來使液面L下降。此外,控制部400亦可在開放了供給閥304之狀態下,開放放洩閥308,並於液面L下降後,藉由封閉放洩閥308來使液面L上升。換言之,控制部400亦可不控制供給閥304及泵浦314a而使液面L上升。
[第二種實施形態]
<構成>In addition, the
圖8係第二種實施形態之鍍覆裝置的鍍覆槽之立體圖。此外,圖9係圖8所示之鍍覆槽的俯視圖,圖10係圖9之A-A箭頭方向圖。參照圖8至圖10說明第二種實施形態之鍍覆裝置。以下,本實施形態在說明中,使用與第一種實施形態所用之零件等相同零件等時,即使無圖示時,仍然照樣使用該零件等之符號。Fig. 8 is a perspective view of the plating tank of the plating device of the second embodiment. In addition, FIG. 9 is a plan view of the plating tank shown in FIG. 8, and FIG. 10 is a view of the AA arrow direction of FIG. 9. The plating apparatus of the second embodiment will be described with reference to FIGS. 8 to 10. Hereinafter, in the description of this embodiment, when the same parts and the like used in the first embodiment are used, even if there is no illustration, the symbols of the parts and the like are still used.
第二種實施形態之鍍覆裝置與第一種實施形態之鍍覆裝置100及鍍覆槽的構成不同。參照圖8,鍍覆裝置600具備:鍍覆槽620、堰660、致動器680(參照圖10)及控制部700。此外,鍍覆槽620具有:調整板222、陽極室226、陰極室228、側板622、624、626、及缺口640、642。另外,缺口640、堰660及致動器680包含於液體排出部720(參照圖10)。The plating apparatus of the second embodiment has a different structure from the
鍍覆槽620係以將其內部分割為2之方式在大致中央配置有調整板222(參照圖9)。藉此,鍍覆槽620之內部分割成陽極室226、及陰極室228。此外,陰極室228被構成其壁面之側板622、側板624、側板626及調整板222包圍。而後,側板622及側板626之一個例子為與溢流槽260之壁面鄰接,而劃分陰極室228與溢流槽260之第一部分262的邊界。此外,側板626以比側板624及調整板222低之方式形成有缺口642(參照圖8)。另外,側板622以比側板626低之方式形成有缺口640。換言之,側板622及側板626比作為其他壁面之側板624及調整板222低。因而,當鍍覆液溢流時,鍍覆液越過側板622及側板626之至少一方而流至溢流槽260。換言之,缺口640及缺口642使用於從鍍覆槽620排出鍍覆液。In the
堰660由概略四方薄板狀之構件構成,並以堵塞缺口640之方式安裝。此外,鍍覆槽620中安裝有致動器680(參照圖10)。致動器680可在與側板626相同高度至與側板624相同高度之間在上下方向移動堰660。藉此,藉由致動器680而向下方向移動堰660時,堰660係在開放缺口640之方向移動,陰極室228中之液面L下降。另外,藉由致動器680而向上方向移動堰660時,堰660在封閉缺口640之方向移動,陰極室228中之液面L上升。The
此外,鍍覆裝置600之一個例子為不具備第一種實施形態之鍍覆裝置100具備的液體排出配管306及放洩閥308。而後,控制部700取代第一種實施形態之控制部400控制的放洩閥308,而係控制致動器680。換言之,控制部700藉由控制致動器680可控制液面L之上升及下降。
<基板固持器之收容方法>In addition, an example of the
其次,就鍍覆裝置600中的基板固持器180之收容方法,依序說明動作、效果、補充。
〈動作〉Next, regarding the method of accommodating the
首先,參照圖11及圖12,說明對鍍覆槽620收容基板固持器180之動作。圖11係顯示鍍覆裝置600收容基板固持器180時,一種控制處理步驟的流程圖,圖12係進行圖11所示之控制時,鍍覆裝置600之動作的說明圖。First, referring to FIG. 11 and FIG. 12, the operation of accommodating the
收容基板固持器180時,首先,在步驟S510中,控制部700係以握持基板固持器180之傳輸機144來到鍍覆槽620正上方的方式使傳輸機144移動(參照圖12A)。此時,係開放供給閥304,鍍覆槽620係鍍覆液進行溢流。When accommodating the
接著,控制部700在步驟S520中,使鍍覆液之液面L下降。具體而言,控制部700封閉供給閥304而使堰660下降。接著,控制部700在步驟S530中,使傳輸機144下降(參照圖12B)。藉此,傳輸機144下降,而基板固持器180與液面L接觸(參照圖12C)。另外,控制部700在基板固持器180之下端與液面L接觸時,係以液面L下降之方式進行步驟S520及步驟S530的處理。換言之,控制部700於基板固持器180之下端與液面L接觸時,係以使液面L下降之方式控制堰660。另外,控制部700亦可變換步驟S520與步驟S530之處理的順序。Next, the
接著,控制部700在步驟S540中,推斷基板固持器180與液面L之接觸。此處,控制部700於傳輸機144來到指定高度時,推斷為基板固持器180與液面L接觸。Next, the
接著,控制部700於步驟S540之處理結束後,在步驟S550中使堰660上升(參照圖12D)。更詳細而言,控制部700在基板固持器180之下端與液面L接觸後,且基板固持器180完全收容於鍍覆槽620之前使堰660上升。接著,控制部700在步驟S560中開放供給閥304。Next, the
而後,當基板固持器180到達鍍覆槽620中之指定位置(圖2的位置)時,在步驟S570中對鍍覆槽220收容基板固持器180完成(參照圖12E)。換言之,控制部700進行之收容基板固持器180的控制處理結束。
〈效果〉
(第一效果)Then, when the
鍍覆裝置600如上述,當基板固持器180之下端與液面L接觸時,液面L下降。因而,鍍覆裝置600與鍍覆裝置100同樣地,在搬送基板固持器180時,可減少鍍覆液從鍍覆槽220之流出量。
(第二效果)The
控制部700在步驟S550中,於基板固持器180之下端與液面L接觸後,且將基板固持器180完全收容於鍍覆槽620之前使堰660上升。藉此,控制部700比將基板固持器180完全收容於鍍覆槽620後才使堰660上升時,可縮短溢流前之時間。在完全收容基板固持器180之前堰660上升時,係在進行收容基板固持器180同時液面L上升。因而,堰660上升後用於溢流所需之鍍覆液量減少,而縮短堰660上升後以鍍覆液充滿鍍覆槽620的時間。
〈就基板固持器之收容方法的補充〉In step S550, the
以下,就鍍覆裝置600中的基板固持器180之收容方法加以補充。
(補充1)
控制部700係使鍍覆液之液面L上升或下降,不過亦可採用上述方法以外之方法使其上升或下降。例如,控制部700亦可藉由不封閉供給閥304,而僅降低堰660來使液面L下降。此外,控制部700亦可在開放了供給閥304之狀態下降低堰660,於液面L下降後,藉由升高堰660而使液面L上升。換言之,控制部700亦可不控制供給閥304而使液面L上升。
(補充2)Hereinafter, the method of accommodating the
控制部700藉由使用致動器680在上下方向移動堰660,而使液面L上升或下降。但是,控制部700最好可使堰660移動至開放缺口640之方向或是封閉缺口640的方向。控制部700使堰660移動至開放缺口640之方向時,可下降液面L,使堰660移動至封閉缺口640之方向時,可使液面L上升。例如,控制部700即使不在上下方向移動堰660,而在左右方向移動堰660時,仍可使液面L上升或下降。
<基板固持器之取出方法>The
其次,就鍍覆裝置600中的基板固持器180之取出方法,依序說明動作、效果、補充。
〈動作〉
首先,參照圖13及圖14說明對基板W鍍覆處理結束後,從鍍覆槽620取出基板固持器180之動作。圖13係顯示從鍍覆裝置600取出基板固持器180時,一種控制處理步驟的流程圖,圖14係進行圖13所示之控制時,鍍覆裝置600之動作的說明圖。Next, with regard to the method of taking out the
對基板W鍍覆處理結束時,首先,在步驟S710中,控制部700係以傳輸機144來到鍍覆槽620之正上方的方式使傳輸機144移動(參照圖14A)。接著,控制部700在傳輸機144移動時,於步驟S720中使鍍覆液之液面L下降(參照圖14B)。具體而言,控制部700使堰660下降。另外,控制部700亦可變換順序來進行步驟S710與步驟S720之處理。When the plating process on the substrate W is completed, first, in step S710, the
接著,控制部700在步驟S730中使傳輸機144下降。然後,傳輸機144完成下降時,握持基板固持器180。Next, the
接著,控制部700在步驟S740中確認堰660下降完成。接著,控制部700在步驟S750中使鍍覆液之液面L上升(參照圖14C)。具體而言,控制部700使堰660上升,並使泵浦314a增加鍍覆液之供給量。接著,控制部700在步驟S760中,使傳輸機144上升。藉此,握持於傳輸機144之基板固持器180上升。換言之,控制部700在傳輸機144從鍍覆液中取出基板固持器180時,使保持於鍍覆槽620之鍍覆液的液面L上升,同時以基板固持器180之下端部從鍍覆液的液面L離開之方式來控制堰660。另外,控制部700使液面L上升的時間點,一個例子為依據基板固持器180浸漬於鍍覆液之深度、在步驟S720中降低液面L時之液面L高度、基板固持器180之上升速度、堰660之上升速度、泵浦314a供給鍍覆液之量等而事先決定,並以時間進行管理。Next, the
而後,當傳輸機144完全上升時,在步驟S770中,基板固持器180之取出動作結束(參照圖14D)。
〈效果〉
(第一效果)Then, when the
採用鍍覆裝置600中基板固持器180之取出方法時,在從鍍覆液之液中取出基板固持器180時,鍍覆液之液面L上升。藉此,鍍覆裝置600與第一種實施形態之鍍覆裝置100同樣地,可減少搬送基板固持器180時鍍覆液從鍍覆槽620之流出量。
〈就基板固持器之取出方法的補充〉When the method of removing the
以下,就鍍覆裝置600中基板固持器180之取出方法加以補充。
(補充1)
控制部700與基板固持器180之收容動作時同樣地,亦可以記載於上述〈動作〉之方法以外的方法上升或下降鍍覆液之液面L。
[修改例]Hereinafter, the method of removing the
上述2個實施形態係例示鍍覆裝置100、600,並例示將基板固持器180搬送至鍍覆槽220、620之方法(基板固持器之收容方法及基板固持器之取出方法)。但是,本發明之搬送方法不限定於將基板固持器180搬送至鍍覆槽220、620的方法,亦包含將基板固持器180搬送至其他處理槽160的方法。此因,藉由本發明之搬送方法,將基板固持器180搬送至其他處理槽160時,亦可減少液體從處理槽160之流出量。再者,本發明之搬送方法不限定於在鍍覆裝置100、600中之搬送方法,亦可適用於搬送基板固持器之全部基板處理裝置。另外,鍍覆裝置100、600包含於基板處理裝置。
[附註]The above two embodiments exemplified the plating
上述實施形態之一部分或全部亦可如以下附註地記載,不過不限於以下。 (附註1)Part or all of the above-mentioned embodiments may be described as the following additional notes, but it is not limited to the following. (Note 1)
附註1的基板固持器之取出方法,係使用用於保持基板之基板固持器及用於處理前述基板之處理槽,從保持了液體之前述處理槽取出至少一部分浸漬於前述液體之前述基板固持器,且具有以下工序:使前述基板固持器向上方向移動,而從前述液體之液中取出前述基板固持器;及使保持於前述處理槽之前述液體的液面上升;使前述液面上升之工序係在從前述液體之液中取出前述基板固持器的工序之間進行。 (附註2)The method for removing the substrate holder in Note 1 is to use a substrate holder for holding a substrate and a processing tank for processing the substrate, and at least a portion of the substrate holder immersed in the liquid is taken out from the processing tank holding the liquid , And has the following steps: moving the substrate holder upward to remove the substrate holder from the liquid; and raising the liquid level of the liquid held in the processing tank; raising the liquid level It is performed between the steps of removing the substrate holder from the liquid. (Note 2)
附註2的基板固持器之取出方法,如附註1所述的基板固持器之取出方法,其中在前述處理槽中安裝有液體供給配管,其係用於在前述處理槽中供給前述液體,使前述液面上升之工序具有前述液體供給配管在前述處理槽中供給前述液體的工序。 (附註3)The method for taking out the substrate holder of Note 2 is the method for taking out the substrate holder as described in Note 1, wherein a liquid supply pipe is installed in the processing tank, which is used to supply the liquid in the processing tank so that the The step of raising the liquid level includes a step in which the liquid supply pipe supplies the liquid in the treatment tank. (Note 3)
附註3的基板固持器之取出方法,如附註1或附註2所述的基板固持器之取出方法,其中在使前述液面上升的工序之前,具有使保持於前述處理槽之前述液體的前述液面下降之工序。 (附註4)The method of taking out the substrate holder of Note 3 is the method of taking out the substrate holder described in Note 1 or Note 2, wherein before the step of raising the liquid level, there is the liquid for making the liquid held in the processing tank The process of surface descent. (Note 4)
附註4的基板固持器之取出方法,如附註3所述的基板固持器之取出方法,其中使前述液面下降之工序具有從前述處理槽排出前述液體的工序,前述處理槽中安裝有液體排出配管,其係用於從前述處理槽排出前述液體,前述液體排出配管中安裝有放洩閥,其係用於調整流經前述液體排出配管之前述液體的流量,排出前述液體之工序具有調整前述放洩閥的工序。 (附註5)The method for removing the substrate holder of Note 4 is the method of removing the substrate holder described in Note 3, wherein the step of lowering the liquid level includes the step of discharging the liquid from the treatment tank, and the treatment tank is equipped with a liquid discharge The piping is used to discharge the liquid from the treatment tank, and the liquid discharge pipe is equipped with a drain valve, which is used to adjust the flow rate of the liquid flowing through the liquid discharge pipe. The process of discharging the liquid includes adjustment Process of drain valve. (Note 5)
附註5的基板固持器之取出方法,如附註3所述的基板固持器之取出方法,其中在前述處理槽之側面形成有缺口,其係用於從前述處理槽排出前述液體,前述缺口中,以堵塞前述缺口之方式安裝有活動堰,使前述液面下降之工序具有使前述堰在開放前述缺口之方向移動的工序,使前述液面上升之工序具有使前述堰在封閉前述缺口之方向移動的工序。 (附註6)The method for removing the substrate holder in Note 5 is the same as the method for removing the substrate holder in Note 3, wherein a notch is formed on the side of the processing tank, which is used to discharge the liquid from the processing tank. In the notch, A movable weir is installed to block the gap, the step of lowering the liquid level has a step of moving the weir in the direction of opening the gap, and the step of raising the liquid level has the step of moving the weir in the direction of closing the gap的processes. (Note 6)
附註6的基板固持器之取出方法,如附註1至附註5中任何一附註所述的基板固持器之取出方法,其中前述基板固持器之下端從前述液面離開而在比前述液面高的位置時,進一步具有使前述基板固持器向上方向之移動速度加速的工序。 (附註7)The method for removing the substrate holder in Note 6 is the same as the method for removing the substrate holder described in any one of Note 1 to Note 5, wherein the lower end of the substrate holder is separated from the liquid level and is higher than the liquid level. At the time of the position, there is further a step of accelerating the upward movement speed of the substrate holder. (Note 7)
附註7的基板固持器之取出方法,如附註1至附註6中任何一附註所述的基板固持器之取出方法,其中從前述液體之液中取出前述基板固持器的工序,具有用於搬送前述基板固持器之傳輸機握持前述基板固持器,而使前述基板固持器上升的工序。 (附註8)The method for removing the substrate holder in Note 7 is the same as the method for removing the substrate holder described in any one of Note 1 to Note 6, wherein the step of removing the substrate holder from the liquid is used for transporting the aforementioned substrate holder. The process of raising the substrate holder by the conveyor of the substrate holder holding the substrate holder. (Note 8)
附註8的基板固持器之取出方法,如附註1至附註7中任何一附註所述的基板固持器之取出方法,其中前述處理槽係用於鍍覆裝置之鍍覆槽,且前述液體係鍍覆液。 (附註9)The method for removing the substrate holder of Note 8 is the method for removing the substrate holder described in any one of Note 1 to Note 7, wherein the aforementioned treatment tank is used for the plating tank of the plating device, and the aforementioned liquid system plating Overlay. (Note 9)
附註9的基板固持器之取出方法,如附註3所述之基板固持器之取出方法,其中前述處理槽係用於鍍覆裝置之鍍覆槽,且前述液體係鍍覆液;其中在前述鍍覆槽中收容有浸漬於前述鍍覆液之陽極,使前述液面下降之工序僅使前述液面下降至前述陽極不致露出於大氣中的高度。 (附註10)The method for removing the substrate holder of Note 9 is the same as the method for removing the substrate holder described in Note 3, wherein the treatment tank is used for the plating tank of the plating device, and the liquid system plating solution is used; The coating tank contains the anode immersed in the plating solution, and the step of lowering the liquid level only lowers the liquid level to a height where the anode is not exposed to the atmosphere. (Note 10)
附註10的基板固持器之取出方法,如附註9所述的基板固持器之取出方法,其中前述鍍覆槽具有:陰極室,其係用於收容前述基板固持器;陽極室,其係用於收容前述陽極;及隔膜,其係用於可在前述陰極室之前述鍍覆液與前述陽極室的前述鍍覆液之間進行離子交換;使前述液面下降之工序係僅使前述液面下降至前述隔膜不致露出於大氣中的高度。 (附註11)The method for removing the substrate holder of Note 10 is the method for removing the substrate holder as described in Note 9, wherein the plating tank has: a cathode chamber for accommodating the substrate holder; and an anode chamber for Containing the anode; and a diaphragm, which is used for ion exchange between the plating solution in the cathode chamber and the plating solution in the anode chamber; the step of lowering the liquid level is to lower the liquid level only To the height where the aforementioned diaphragm will not be exposed to the atmosphere. (Note 11)
附註11之基板處理裝置具備:基板固持器,其係用於保持基板;處理槽,其係用於保持液體;液體供給配管,其係用於在前述處理槽中供給前述液體;供給閥,其係安裝於前述液體供給配管,用於調整流經前述液體供給配管之前述液體的流量;液體排出部,其係用於從前述處理槽排出前述液體;傳輸機,其係用於握持收容於前述處理槽之前述基板固持器,使其向上方向移動,而從前述處理槽取出前述基板固持器;及控制部;前述控制部在前述傳輸機從前述液體之液中取出前述基板固持器時,係以使保持於前述處理槽之前述液體的液面上升,同時前述基板固持器之下端部從前述液體之液面離開的方式,控制前述供給閥及前述液體排出部中的至少一方。 (附註12)The substrate processing apparatus of Note 11 includes: a substrate holder for holding a substrate; a processing tank for holding liquid; a liquid supply pipe for supplying the liquid in the processing tank; a supply valve, which It is installed in the liquid supply pipe for adjusting the flow rate of the liquid flowing through the liquid supply pipe; the liquid discharge part is used to discharge the liquid from the processing tank; the conveyor is used to hold and house The substrate holder of the processing tank is moved upward to take out the substrate holder from the processing tank; and a control part; the control part, when the conveyor takes out the substrate holder from the liquid, At least one of the supply valve and the liquid discharge part is controlled such that the liquid level of the liquid held in the processing tank is raised while the lower end of the substrate holder is separated from the liquid level of the liquid. (Note 12)
附註12之基板處理裝置,如附註11所述的基板處理裝置,其中在前述控制部以使保持於前述處理槽之前述液體的液面上升之方式,控制前述供給閥及前述液體排出部中的至少一方之前,前述控制部係以使保持於前述處理槽之前述液體的前述液面下降之方式控制前述液體排出部。 (附註13)The substrate processing apparatus of Note 12 is the substrate processing apparatus of Note 11, wherein the control section controls the supply valve and the liquid discharge section in such a way that the liquid level of the liquid held in the processing tank rises. Before at least one of them, the control unit controls the liquid discharge unit to lower the liquid level of the liquid held in the processing tank. (Note 13)
附註13之基板處理裝置,如附註11或附註12所述的基板處理裝置,其中前述液體排出部具有:液體排出配管,其係用於從前述處理槽排出前述液體,並安裝於前述處理槽中;及放洩閥,其係用於調整流經前述液體排出配管之前述液體的流量,並安裝於前述液體排出配管中。 (附註14)The substrate processing apparatus of Note 13 is the substrate processing apparatus described in Note 11 or Note 12, wherein the liquid discharge part has: a liquid discharge pipe for discharging the liquid from the processing tank and is installed in the processing tank ; And a drain valve, which is used to adjust the flow rate of the liquid flowing through the liquid discharge pipe, and is installed in the liquid discharge pipe. (Note 14)
附註14之基板處理裝置,如附註11或附註12所述的基板處理裝置,其中前述液體排出部具有:缺口,其係用於從前述處理槽排出前述液體,並形成於前述處理槽之側面;及活動堰,其係以堵塞前述缺口之方式安裝。 (附註15)The substrate processing apparatus of Note 14, such as the substrate processing apparatus of Note 11 or Note 12, wherein the liquid discharge portion has: a notch for discharging the liquid from the processing tank and is formed on the side of the processing tank; And movable weir, which is installed in a way to block the aforementioned gap. (Note 15)
附註15之基板處理裝置,如附註11至附註14中任何一附註所述的基板處理裝置,其中前述控制部於前述基板固持器之下端從前述液面離開而在比前述液面高的位置時,係以使前述基板固持器向上方向之移動速度加速的方式控制前述傳輸機。 (附註16)The substrate processing apparatus of Note 15 is the substrate processing apparatus described in any one of Note 11 to Note 14, wherein the control portion is separated from the liquid level at the lower end of the substrate holder and is at a position higher than the liquid level , The conveyor is controlled to accelerate the moving speed of the substrate holder in the upward direction. (Note 16)
附註16之基板處理裝置,如附註11至附註15中任何一附註所述的基板處理裝置,其中前述處理槽係鍍覆槽,且前述液體係鍍覆液。 (附註17)The substrate processing apparatus of Note 16 is the substrate processing apparatus described in any one of Note 11 to Note 15, wherein the processing tank is a plating tank and the liquid system plating solution. (Note 17)
附註17之基板處理裝置,如附註126的基板處理裝置,其中前述處理槽係鍍覆槽,且前述液體係鍍覆液;其中前述鍍覆槽具有浸漬於前述鍍覆液之陽極,在前述控制部以使保持於前述處理槽之前述液體的液面下降之方式,控制前述液體排出部時,前述控制部係以僅使前述液面下降至不致露出前述陽極之高度的方式來控制前述液體排出部。
(附註18)The substrate processing device of Note 17, such as the substrate processing device of
附註18之基板處理裝置,如附註17所述的基板處理裝置,其中前述鍍覆槽具有:陰極室,其係收容前述基板固持器;陽極室,其係收容前述陽極;及隔膜,其係用於可在前述陰極室之鍍覆液與前述陽極室的鍍覆液之間進行離子交換;在前述控制部以使保持於前述處理槽之前述液體的前述液面下降之方式控制前述液體排出部時,前述控制部係以僅使前述液面下降至不致露出前述隔膜之高度的方式來控制前述液體排出部。 (附註19)The substrate processing apparatus of Note 18, such as the substrate processing apparatus of Note 17, wherein the plating tank has: a cathode chamber for accommodating the substrate holder; an anode chamber for accommodating the anode; and a diaphragm for Ion exchange can be performed between the plating solution in the cathode chamber and the plating solution in the anode chamber; the control section controls the liquid discharge section to lower the level of the liquid held in the treatment tank At this time, the control unit controls the liquid discharge unit in such a way that only the liquid level is lowered to a height that does not expose the diaphragm. (Note 19)
附註19的基板固持器之收容方法,係使用用於保持基板之基板固持器及用於處理前述基板之處理槽,在保持了液體之前述處理槽中,以至少一部分浸漬於前述液體之方式收容前述基板固持器,且具有以下工序:使前述基板固持器向下方向移動,而將前述基板固持器收容於前述處理槽;及使保持於前述處理槽之前述液體的液面下降;前述基板固持器之下端與前述液面接觸時,至少進行使前述液面下降之工序。 (附註20)The method of accommodating the substrate holder of Note 19 is to use the substrate holder for holding the substrate and the processing tank for processing the substrate, and the processing tank holding the liquid is accommodated in such a way that at least part of it is immersed in the liquid The substrate holder has the following steps: moving the substrate holder downward to accommodate the substrate holder in the processing tank; and lowering the liquid level of the liquid held in the processing tank; and holding the substrate When the lower end of the vessel is in contact with the liquid surface, at least the step of lowering the liquid surface is performed. (Note 20)
附註20的基板固持器之收容方法,如附註19所述的基板固持器之收容方法,其中在將前述基板固持器開始向下方向移動後,且前述液面與前述基板固持器之下端接觸前,進一步具有前述基板固持器向下方向之移動速度減速的工序。 (附註21)The storage method of the substrate holder in Note 20 is the same as the storage method of the substrate holder in Note 19, wherein after the substrate holder starts to move downward, and before the liquid surface contacts the lower end of the substrate holder , And further have the step of decelerating the moving speed of the substrate holder in the downward direction. (Note 21)
附註21的基板固持器之收容方法,如附註19或附註20所述的基板固持器之收容方法,其中使前述液面下降之工序具有從前述處理槽排出前述液體的工序,前述處理槽中安裝有用於從前述處理槽排出前述液體之液體排出配管,前述液體排出配管中安裝有用於調整流經前述液體排出配管之前述液體流量的放洩閥,排出前述液體之工序具有調整前述放洩閥的工序。 (附註22)The method for accommodating the substrate holder of Note 21 is the method of accommodating the substrate holder described in Note 19 or Note 20, wherein the step of lowering the liquid level includes the step of discharging the liquid from the processing tank, and the processing tank is installed There is a liquid discharge pipe for discharging the liquid from the treatment tank. The liquid discharge pipe is equipped with a discharge valve for adjusting the flow rate of the liquid flowing through the liquid discharge pipe. The process of discharging the liquid includes adjusting the discharge valve. Process. (Note 22)
附註22的基板固持器之收容方法,如附註21所述的基板固持器之收容方法,其中排出前述液體之工序係從前述處理槽排出之前述液體的體積,與將前述基板固持器收容於前述處理槽後之前述基板固持器浸漬於前述液體的部分之容積相等。 (附註23)The storage method of the substrate holder of Note 22 is the same as the method of storage of the substrate holder described in Note 21, wherein the process of discharging the liquid is the volume of the liquid discharged from the processing tank, and storing the substrate holder in the The volume of the portion of the substrate holder immersed in the liquid after the treatment tank is equal. (Note 23)
附註23的基板固持器之收容方法,如附註19或附註20所述的基板固持器之收容方法,其中在前述處理槽之側面形成有用於從前述處理槽排出前述液體之缺口,在前述缺口中,以堵塞前述缺口之方式安裝有活動堰,使前述液面下降之工序具有使前述堰在開放前述缺口之方向移動的工序。 (附註24)The method for accommodating the substrate holder of Note 23 is the method for accommodating the substrate holder described in Note 19 or Note 20, wherein a notch for draining the liquid from the processing tank is formed on the side of the processing tank, and in the notch A movable weir is installed to block the gap, and the step of lowering the liquid level includes a step of moving the weir in a direction to open the gap. (Note 24)
附註24的基板固持器之收容方法,如附註23所述的基板固持器之收容方法,其中在前述基板固持器之下端與前述液面接觸後,且將前述基板固持器完全收容於前述處理槽之前,進一步具有使前述堰在封閉前述缺口之方向移動的工序。 (附註25)The method for accommodating the substrate holder of note 24 is the same as the method for accommodating the substrate holder of note 23, wherein after the lower end of the substrate holder is in contact with the liquid surface, the substrate holder is completely accommodated in the processing tank Previously, there was further a step of moving the weir in the direction to close the notch. (Note 25)
附註25的基板固持器之收容方法,如附註19至附註24中任何一附註所述的基板固持器之收容方法,其中將前述基板固持器收容於前述處理槽之工序,具有用於搬送前述基板固持器之傳輸機握持前述基板固持器,並使前述基板固持器下降的工序。 (附註26)The method of storing the substrate holder in Note 25 is the method of storing the substrate holder described in any one of Note 19 to Note 24, wherein the step of storing the substrate holder in the processing tank is used to transport the substrate The process of holding the substrate holder by the conveyor of the holder and lowering the substrate holder. (Note 26)
附註26的基板固持器之收容方法,如附註19至附註25中任何一附註所述的基板固持器之收容方法,其中前述處理槽係用於鍍覆裝置之鍍覆槽,且前述液體係鍍覆液。 (附註27)The method for accommodating the substrate holder of Note 26 is the method for accommodating the substrate holder described in any one of Note 19 to Note 25, wherein the treatment tank is used for the plating tank of the plating device, and the liquid system is plated. Overlay. (Note 27)
附註27的基板固持器之收容方法,如附註26所述的基板固持器之收容方法,其中在前述鍍覆槽中收容有浸漬於前述鍍覆液之陽極,使前述液面下降之工序僅使前述液面下降至不致露出前述陽極之高度。 (附註28)The method of accommodating the substrate holder of note 27 is the method of accommodating the substrate holder of note 26, wherein the anode immersed in the plating solution is accommodated in the plating tank, and the step of lowering the liquid level is only The aforementioned liquid level drops to a height that does not expose the aforementioned anode. (Note 28)
附註28的基板固持器之收容方法,如附註27所述的基板固持器之收容方法,其中前述鍍覆槽具有:陰極室,其係收容前述基板固持器;陽極室,其係收容前述陽極;及隔膜,其係用於可在前述陰極室之鍍覆液與前述陽極室的鍍覆液之間進行離子交換;使前述液面下降之工序僅使前述液面下降至不致露出前述隔膜的高度。 (附註29)The method for accommodating the substrate holder of note 28 is the method for accommodating the substrate holder of note 27, wherein the plating tank has: a cathode chamber for accommodating the substrate holder; an anode chamber for accommodating the anode; And a diaphragm, which is used for ion exchange between the plating solution in the cathode chamber and the plating solution in the anode chamber; the step of lowering the liquid level only lowers the liquid level to a height that does not expose the diaphragm . (Note 29)
附註29之基板處理裝置具備:基板固持器,其係用於保持基板;處理槽,其係用於保持液體;液體排出部,其係用於從前述處理槽排出前述液體;傳輸機,其係用於握持基板固持器使其向下方向移動,並將前述基板固持器收容於前述處理槽;及控制部;前述控制部在前述基板固持器之下端與液面接觸時,係以至少使前述液面下降之方式,控制前述液體排出部。 (附註30)The substrate processing apparatus of Note 29 is provided with: a substrate holder for holding a substrate; a processing tank for holding liquid; a liquid discharge portion for discharging the liquid from the processing tank; and a conveyor, which is It is used to hold the substrate holder to move downward, and accommodate the substrate holder in the processing tank; and a control part; when the lower end of the substrate holder is in contact with the liquid surface, the control part is used to make at least The manner in which the liquid level is lowered controls the liquid discharge portion. (Note 30)
附註30之基板處理裝置,如附註29所述的基板處理裝置,其中前述控制部在前述傳輸機使前述基板固持器向下方向移動後,且在前述液面與基板固持器接觸之前,係以前述基板固持器之下降速度減速的方式控制前述傳輸機。 (附註31)The substrate processing apparatus of Note 30, such as the substrate processing apparatus of Note 29, wherein the control unit is used after the conveyor moves the substrate holder downward and before the liquid surface contacts the substrate holder The lowering speed of the substrate holder is decelerated to control the conveyor. (Note 31)
附註31之基板處理裝置,如附註29或附註30所述的基板處理裝置,其中前述液體排出部具有:液體排出配管,其係用於從前述處理槽排出前述液體;及放洩閥,其係安裝於前述液體排出配管,用於調整流經前述液體排出配管之前述液體的流量;前述控制部在使前述液面下降時,係以前述液體排出配管排出與將前述基板固持器收容於前述處理槽後之前述基板固持器浸漬於前述液體的部分之容積相等體積的前述液體之方式,控制前述放洩閥。 (附註32)The substrate processing apparatus of Note 31, such as the substrate processing apparatus described in Note 29 or Note 30, wherein the liquid discharge portion has: a liquid discharge pipe for discharging the liquid from the processing tank; and a drain valve, which is Installed in the liquid discharge pipe to adjust the flow rate of the liquid flowing through the liquid discharge pipe; when the control unit lowers the liquid level, it is discharged through the liquid discharge pipe and the substrate holder is accommodated in the processing The said substrate holder behind the tank is immersed in the said liquid with the same volume of the said liquid, and the said drain valve is controlled. (Note 32)
附註32之基板處理裝置,如附註29或附註30所述的基板處理裝置,其中前述液體排出部具有:缺口,其係用於從前述處理槽排出前述液體,並形成於前述處理槽之側面;及活動堰,其係以堵塞前述缺口之方式安裝。 (附註33)The substrate processing apparatus of Note 32, such as the substrate processing apparatus described in Note 29 or Note 30, wherein the liquid discharge portion has: a notch for discharging the liquid from the processing tank and is formed on the side of the processing tank; And movable weir, which is installed in a way to block the aforementioned gap. (Note 33)
附註33之基板處理裝置,如附註32所述的基板處理裝置,其中前述控制部在前述基板固持器之下端與前述液面接觸後,且在前述基板固持器完全收容於前述處理槽之前,藉由控制前述堰,而使前述堰在封閉前述缺口之方向移動。 (附註34)The substrate processing apparatus of Note 33, such as the substrate processing apparatus of Note 32, wherein the control portion is brought into contact with the liquid surface at the lower end of the substrate holder and before the substrate holder is completely accommodated in the processing tank. By controlling the weir, the weir is moved in the direction of closing the gap. (Note 34)
附註34之基板處理裝置,如附註29至附註33中任何一附註所述之基板處理裝置,其中前述處理槽係鍍覆槽,且前述液體係鍍覆液。 (附註35)The substrate processing apparatus of Note 34 is the substrate processing apparatus described in any one of Note 29 to Note 33, wherein the processing tank is a plating tank and the liquid system plating solution. (Note 35)
附註35之基板處理裝置,如附註34所述的基板處理裝置,其中前述鍍覆槽具有浸漬於前述鍍覆液之陽極,前述控制部以使保持於前述處理槽之前述液體的液面下降之方式控制前述液體排出部時,前述控制部係以僅使前述液面下降至不致露出前述陽極之高度的方式控制前述液體排出部。 (附註36)The substrate processing apparatus of Note 35 is the substrate processing apparatus of Note 34, wherein the plating tank has an anode immersed in the plating solution, and the control unit lowers the level of the liquid held in the processing tank When the liquid discharge part is controlled by the method, the control part controls the liquid discharge part so that only the liquid level is lowered to a height where the anode is not exposed. (Note 36)
附註36之基板處理裝置,如附註35所述的基板處理裝置,其中前述鍍覆槽具有:陰極室,其係收容前述基板固持器;陽極室,其係收容前述陽極;及隔膜,其係用於可在前述陰極室之鍍覆液與前述陽極室的鍍覆液之間進行離子交換;前述控制部以使保持於前述處理槽之前述液體的前述液面下降之方式控制前述液體排出部時,前述控制部係以僅使前述液面下降至不致露出前述隔膜之高度的方式控制前述液體排出部。The substrate processing apparatus of Note 36, such as the substrate processing apparatus described in Note 35, wherein the plating tank has: a cathode chamber for accommodating the substrate holder; an anode chamber for accommodating the anode; and a diaphragm for use When ion exchange can be performed between the plating solution in the cathode chamber and the plating solution in the anode chamber; when the control section controls the liquid discharge section to lower the level of the liquid held in the treatment tank The control unit controls the liquid discharge unit in such a way that only the liquid level is lowered to a height that does not expose the diaphragm.
以上,僅說明本發明幾個實施形態,不過,熟悉本技術之業者當可輕易理解在實質上不脫離本發明之新穎的教示及優點而例示的實施形態中,可加以多種變更或改良。因此,加以此種變更或改良之形態亦應包含於本發明之技術性範圍。此外,亦可任意組合上述實施形態。Above, only a few embodiments of the present invention have been described. However, those skilled in the art can easily understand that various changes or improvements can be made in the exemplified embodiments without substantially departing from the novel teachings and advantages of the present invention. Therefore, forms with such changes or improvements should also be included in the technical scope of the present invention. In addition, the above-mentioned embodiments may be combined arbitrarily.
100:鍍覆裝置
124:暫存盒
126:預濕槽
128:預浸槽
130a:第一洗淨槽
130b:第二洗淨槽
132:噴吹槽
140:基板搬送裝置
142:水平軌條
144,144a,144b:傳輸機
160:處理槽
180:基板固持器
200:鍍覆單元
220:鍍覆槽
222:調整板
223:開口
224:隔膜
226:陽極室
228:陰極室
232:高水位感測器
234:低水位感測器
260:溢流槽
262:第一部分
264:第二部分
302:液體供給配管
304:供給閥
306:液體排出配管
308:放洩閥
312:陽極
314a,314b:泵浦
316,318,320:配管
322:排出槽
400:控制部
600:鍍覆裝置
620:鍍覆槽
622,624,626:側板
640,642:缺口
660:堰
680:致動器
700:控制部
720:液體排出部
L:液面
LC:液柱
W:基板100: Plating device
124: Temporary Storage Box
126: Pre-wet tank
128:
圖1係第一種實施形態之鍍覆裝置的俯視圖。 圖2係顯示圖1所示之鍍覆裝置的鍍覆槽周邊之放大剖面圖。 圖3係顯示圖1所示之鍍覆裝置在收容基板固持器時一種控制處理步驟的流程圖。 圖4係進行圖3所示之控制時,鍍覆裝置之動作的說明圖。 圖5係顯示從圖1所示之鍍覆裝置取出基板固持器時一種控制處理步驟的流程圖。 圖6係進行圖5所示之控制時,鍍覆裝置之動作的說明圖。 圖7係顯示從鍍覆液取出基板固持器時,液面及基板固持器之部分的放大圖。 圖8係第二種實施形態之鍍覆裝置的鍍覆槽之立體圖。 圖9係圖8所示之鍍覆槽的俯視圖。 圖10係圖9之A-A箭頭方向圖。 圖11係顯示第二種實施形態之鍍覆裝置收容基板固持器時,一種控制處理步驟的流程圖。 圖12係進行圖11所示之控制時,鍍覆裝置之動作的說明圖。 圖13係顯示從第二種實施形態之鍍覆裝置取出基板固持器時,一種控制處理步驟的流程圖。 圖14係進行圖13所示之控制時,鍍覆裝置之動作的說明圖。Fig. 1 is a top view of the plating apparatus of the first embodiment. FIG. 2 is an enlarged cross-sectional view showing the periphery of the plating tank of the plating device shown in FIG. 1. FIG. FIG. 3 is a flowchart showing a control processing step when the plating device shown in FIG. 1 accommodates the substrate holder. Fig. 4 is an explanatory diagram of the operation of the plating device when the control shown in Fig. 3 is performed. FIG. 5 is a flowchart showing a control process step when the substrate holder is taken out from the plating device shown in FIG. 1. Fig. 6 is an explanatory diagram of the operation of the plating device when the control shown in Fig. 5 is performed. FIG. 7 is an enlarged view showing the liquid level and the part of the substrate holder when the substrate holder is taken out from the plating solution. Fig. 8 is a perspective view of the plating tank of the plating device of the second embodiment. FIG. 9 is a top view of the plating tank shown in FIG. 8. FIG. Figure 10 is the AA arrow direction diagram of Figure 9. FIG. 11 is a flowchart showing a control process step when the plating device of the second embodiment accommodates the substrate holder. Fig. 12 is an explanatory diagram of the operation of the plating device when the control shown in Fig. 11 is performed. FIG. 13 is a flowchart showing a control processing procedure when the substrate holder is taken out from the plating apparatus of the second embodiment. Fig. 14 is an explanatory diagram of the operation of the plating device when the control shown in Fig. 13 is performed.
144:傳輸機 144: Conveyor
180:基板固持器 180: substrate holder
220:鍍覆槽 220: Plating tank
304:供給閥 304: Supply valve
308:放洩閥 308: Drain Valve
L:液面 L: Liquid level
W:基板 W: substrate
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