TW202103126A - Pixel array substrate - Google Patents
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- TW202103126A TW202103126A TW108124809A TW108124809A TW202103126A TW 202103126 A TW202103126 A TW 202103126A TW 108124809 A TW108124809 A TW 108124809A TW 108124809 A TW108124809 A TW 108124809A TW 202103126 A TW202103126 A TW 202103126A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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Abstract
Description
本發明是有關於一種畫素陣列基板。The present invention relates to a pixel array substrate.
單一配向區域的液晶顯示面板,在不同視角下,由於光線行進的路徑不同,因此相位延遲也不相同,造成在不同位置觀影時所感受到的畫面亮度不同,降低觀賞品質。為減少背光源的光線以不同角度通過顯示器時,所經歷的相位延遲的差異,因此出現了多個配向區域的顯示技術。In the liquid crystal display panel with a single alignment area, under different viewing angles, because the light travels through different paths, the phase delay is also different, resulting in different brightness of the picture felt when watching movies at different positions, which reduces the viewing quality. In order to reduce the difference in phase delay experienced when the light from the backlight passes through the display at different angles, a display technology with multiple alignment areas has emerged.
一般而言,多個配向區域的顯示技術採用米字形的畫素電極。米字形的畫素電極包括多個主幹部及多個分支部,其中多個主幹部相交叉,多個分支部配置於由多個主幹部劃分出的多個區域,以定義多個配向區域。然而,主幹部的寬度過大,使得液晶顯示面板的穿透度不易提升。此外,因資料線之訊號所產生電場易從畫素電極竄出,進而造成顯示不良。Generally speaking, the display technology for multiple alignment areas uses a square-shaped pixel electrode. The M-shaped pixel electrode includes a plurality of main parts and a plurality of branch parts, wherein the plurality of main parts intersect, and the plurality of branch parts are arranged in a plurality of areas divided by the plurality of main parts to define a plurality of alignment areas. However, the width of the backbone is too large, which makes it difficult to increase the transparency of the liquid crystal display panel. In addition, the electric field generated by the signal of the data line is easy to escape from the pixel electrode, which may cause poor display.
本發明提供一種畫素陣列基板,採用所述畫素陣列基板的性能佳。The present invention provides a pixel array substrate, the performance of which adopts the pixel array substrate is good.
本發明的畫素陣列基板包括基板及設置於基板上的多個畫素結構。每一畫素結構包括資料線、掃描線、主動元件及畫素電極。主動元件電性連接至資料線及掃描線。畫素電極電性連接至主動元件。畫素電極包括第一子畫素電極及第二子畫素電極。第一子畫素電極具有第一主幹部、第二主幹部和多個第一分支部,其中第一主幹部與第二主幹部交叉,且多個第一分支部設置於第一主幹部的同一側及第二主幹部的相對兩側。第二子畫素電極具有第三主幹部、第四主幹部和多個第二分支部,其中第三主幹部與第四主幹部交叉,多個第二分支部設置於第三主幹部的同一側及第四主幹部的相對兩側,且多個第一分支部及多個第二分支部位於第一主幹部與第三主幹部之間。多個畫素結構的多條資料線在第一方向上排列,每一畫素結構的第一子畫素電極及第二子畫素電極在第一方向上排列,且每一畫素結構的第二主幹部及第四主幹部係分離。The pixel array substrate of the present invention includes a substrate and a plurality of pixel structures arranged on the substrate. Each pixel structure includes data lines, scan lines, active components, and pixel electrodes. The active component is electrically connected to the data line and the scan line. The pixel electrode is electrically connected to the active device. The pixel electrode includes a first sub-pixel electrode and a second sub-pixel electrode. The first sub-pixel electrode has a first main portion, a second main portion, and a plurality of first branch portions, wherein the first main portion and the second main portion intersect, and the plurality of first branch portions are disposed on the first main portion. The same side and opposite sides of the second trunk. The second sub-pixel electrode has a third main part, a fourth main part, and a plurality of second branch parts, wherein the third main part crosses the fourth main part, and the plurality of second branch parts are arranged on the same part of the third main part. The side and opposite sides of the fourth trunk portion, and the plurality of first branch portions and the plurality of second branch portions are located between the first trunk portion and the third trunk portion. A plurality of data lines of a plurality of pixel structures are arranged in the first direction, the first sub-pixel electrode and the second sub-pixel electrode of each pixel structure are arranged in the first direction, and the data lines of each pixel structure are arranged in the first direction. The second main cadre department and the fourth main cadre department are separated.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.
應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”係可為二元件間存在其它元件。It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between two elements.
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the The specific amount of measurement-related error (ie, the limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately" or "substantially" as used herein can be based on optical properties, etching properties or other properties to select a more acceptable range of deviation or standard deviation, and not one standard deviation can be applied to all properties .
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.
圖1為本發明一實施例之畫素陣列基板的上視示意圖。FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention.
圖2為圖1的一個畫素結構的放大示意圖。Fig. 2 is an enlarged schematic diagram of a pixel structure of Fig. 1.
圖3為本發明一實施例之畫素陣列基板的剖面示意圖。圖3對應圖2的剖線A-A’。3 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. Figure 3 corresponds to the section line A-A' of Figure 2.
圖4為採用本發明之一實施例的畫素結構的液晶顯示面板在電壓驅動下的放大示意圖。4 is an enlarged schematic diagram of a liquid crystal display panel adopting a pixel structure according to an embodiment of the present invention under voltage driving.
請參照圖1及圖2,畫素陣列基板10包括基板110以及設置於基板110上的多個畫素結構PX。1 and FIG. 2, the
請參照圖2,每一畫素結構PX包括資料線DL、掃描線SL、主動元件T及畫素電極120,其中主動元件T電性連接至資料線DL及掃描線SL,而畫素電極120電性連接至主動元件T。Referring to FIG. 2, each pixel structure PX includes a data line DL, a scan line SL, an active device T, and a
請參照圖1及圖2,多個畫素結構PX的多條資料線DL在第一方向x上排列,多個畫素結構PX的多條掃描線SL在第二方向y上排列,其中第一方向x與第二方向y交錯。舉例而言,在本實施例中,第一方向x與第二方向y實質上可垂直,但本發明不以此為限。1 and 2, a plurality of data lines DL of a plurality of pixel structures PX are arranged in a first direction x, and a plurality of scan lines SL of a plurality of pixel structures PX are arranged in a second direction y, where the first One direction x and second direction y are staggered. For example, in this embodiment, the first direction x and the second direction y may be substantially perpendicular, but the invention is not limited thereto.
請參照圖2,在本實施例中,主動元件T包括薄膜電晶體,薄膜電晶體具有第一端Ta、控制端Tc、第二端Tb及半導體圖案Td,第一端Ta及第二端Tb分別電性連接至半導體圖案Td的不同兩區,資料線DL電性連接至薄膜電晶體的第一端Ta,掃描線SL電性連接至薄膜電晶體的控制端Tc,而畫素電極120電性至薄膜電晶體的第二端Tb。請參照圖2及圖3,畫素陣列基板10更包括絕緣層130(標示於圖3),絕緣層130夾設於畫素電極120與主動元件T的第二端Tb之間且具有接觸窗132,而畫素電極120係透過絕緣層130的接觸窗132電性連接至主動元件T的第二端Tb。Referring to FIG. 2, in this embodiment, the active device T includes a thin film transistor. The thin film transistor has a first terminal Ta, a control terminal Tc, a second terminal Tb, and a semiconductor pattern Td. The first terminal Ta and the second terminal Tb The data line DL is electrically connected to the first terminal Ta of the thin film transistor, the scan line SL is electrically connected to the control terminal Tc of the thin film transistor, and the
請參照圖2,畫素電極120包括第一子畫素電極121及第二子畫素電極122。Please refer to FIG. 2, the
第一子畫素電極121具有第一主幹部121a、第二主幹部121b和多個第一分支部121c。第一主幹部121a在第二方向y上延伸。第二主幹部121b在第一方向x上延伸。第一主幹部121a與第二主幹部121b交叉。多個第一分支部121c與第一主幹部121a及第二主幹部121b連接,且設置於第一主幹部121a的同一側(例如:右側)及第二主幹部121b的相對兩側(例如:上下兩側)。分別設置於第二主幹部121b之相對兩側的多個第一分支部121c分別朝不同的方向d1及方向d2延伸,其中方向d1及方向d2不垂直也不平行於第一方向x及第二方向y。The
在本實施例中,第一子畫素電極121更具有第一周邊部121d。第一周邊部121d連接第一主幹部121a的相對兩端及第二主幹部121b的至少一端,以定義第一子畫素電極121的多個第一輔助開口O1。多個第一輔助開口O1與多個第一分支部121c分別位於第一主幹部121a的相對兩側。多個第一輔助開口O1分別位於第二主幹部121b的相對兩側。每一第一輔助開口O1的長度方向(即第二方向y)實質上平行於第一主幹部121a。每一第一輔助開口O1的長度方向實質上平行於資料線DL。In this embodiment, the
在本實施例中,第一子畫素電極121的第一主幹部121a與第一子畫素電極121所屬之畫素結構PX的資料線DL係重疊。舉例而言,在本實施例中,第一主幹部121a的線寬w1小於第一子畫素電極121所屬之畫素結構PX的資料線DL的線寬W1,而第一主幹部121a於基板110上的垂直投影可落在資料線DL於基板110上的垂直投影內。然而,本發明不限於此,在另一實施例中,第一主幹部121a的線寬w1也可大於第一子畫素電極121所屬之畫素結構PX的資料線DL的線寬W1,而第一主幹部121a於基板110上之垂直投影的一部分也可落在資料線DL於基板110上的垂直投影外;在又一實施例中,第一主幹部121a的線寬w1也可等於第一子畫素電極121所屬之畫素結構PX的資料線DL的線寬W1,而第一主幹部121a於基板110上之垂直投影的部分邊緣與資料線DL於基板110上之垂直投影的部分邊緣可切齊。In this embodiment, the
第二子畫素電極122具第三主幹部122a、第四主幹部122b和多個第二分支部122c。第三主幹部122a在第二方向y上延伸。第四主幹部122b在第一方向x上延伸。第三主幹部122a與第四主幹部122b交叉。多個第二分支部122c設置於第三主幹部122a的同一側(例如:左側)及第四主幹部122b的相對兩側(例如:上下兩側)。分別設置於第四主幹部122b之相對兩側的多個第二分支部122c分別朝不同的方向d3及方向d4延伸,其中方向d3及方向d4不垂直也不平行於第一方向x及第二方向y,且方向d1、方向d2、方向d3及方向d4互不相同。The second
第一子畫素電極121的多個第一分支部121c及第二子畫素電極122的多個第二分支部122c位於第一子畫素電極121的第一主幹部121a與第二子畫素電極122的第三主幹部122a之間。The plurality of
在本實施例中,第二子畫素電極122更具有第二周邊部122d。第二周邊部122d連接第三主幹部122a的相對兩端及第四主幹部122b的至少一端,以定義第二子畫素電極122的多個第二輔助開口O2。多個第二輔助開口O2與多個第二分支部122c分別位於第三主幹部122a的相對兩側,且多個第二輔助開口O2分別位於第四主幹部122b的相對兩側。每一第二輔助開口O2的長度方向(即第二方向y)實質上平行於第三主幹部122a。每一第二輔助開口O2的長度方向實質上平行於資料線DL。In this embodiment, the second
請參照圖1及圖2,在本實施例中,第二子畫素電極122的第三主幹部122a與在同一行上且相鄰之另一畫素結構PX’的資料線DL’係重疊。在本實施例中,資料線DL’與資料線DL的極性可相反,但本發明不以此為限。1 and 2, in this embodiment, the third
舉例而言,在本實施例中,第三主幹部122a的線寬w2小於另一畫素結構PX’之資料線DL’的線寬W2,且第三主幹部122a於基板110上的垂直投影可落在資料線DL’於基板110上的垂直投影內。然而,本發明不限於此,在另一實施例中,第三主幹部122a的線寬w2也可大於另一畫素結構PX’之資料線DL’的線寬W2,而第三主幹部122a於基板110上之垂直投影的一部分可落在資料線DL’於基板110上的垂直投影外;在又一實施例中,第三主幹部122a的線寬w2也可等於另一畫素結構PX’之資料線DL’的線寬W2,而第三主幹部122a於基板110上之垂直投影的部分邊緣與資料線DL’於基板110上之垂直投影的部分邊緣可切齊。For example, in this embodiment, the line width w2 of the
畫素電極120的第一子畫素電極121及第二子畫素電極122在第一方向x上排列。也就是說,每一畫素電極120的第一子畫素電極121及第二子畫素電極122是在多個畫素結構PX之多條資料線DL的排列方向上排列。畫素電極120具有一主要開口O。主要開口O設置於第一子畫素電極121與第二子畫素電極122之間,以使第一子畫素電極121之第一周邊部121d的至少一部分與第二子畫素電極122之第二周邊部122d的至少一部分斷開、第一子畫素電極121的多個第一分支部121c與第二子畫素電極122的多個第二分支部122c分離、且第一子畫素電極121的第二主幹部121b與第二子畫素電極122的第四主幹部122b分離。The first
請參照圖1、圖2及圖4,當畫素陣列基板10應用於液晶顯示面板時,主要開口O的設置能使靠近主要開口O之部分第一周邊部121d及部分第二周邊部122d上的液晶分子朝預定方向傾倒。藉此,液晶顯示面板之對應主要開口O處的暗紋寬度W(標示於圖4)能縮減,而提升液晶顯示面板的穿透率。Please refer to FIGS. 1, 2 and 4, when the
此外,在本實施例中,第一輔助開口O1及第二輔助開口O2的設置能使靠近第一輔助開口O1及第二輔助開口O2之另一部分的第一周邊部121d及另一部分的第二周邊部122d上的液晶分子朝預定方向傾倒,而使液晶顯示面板之對應第一輔助開口O1及第二輔助開口O2處呈現亮區,有助於液晶顯示面板的穿透率提升。In addition, in this embodiment, the arrangement of the first auxiliary opening O1 and the second auxiliary opening O2 can make it close to the first
再者,於本實施例中,第一子畫素電極121的第一主幹部121a遮蔽所屬畫素結構PX的資料線DL,第二子畫素電極122的第三主幹部122a遮蔽另一畫素結構PX’的資料線DL’,因此,能減少因資料線DL、DL’而產生之電場對液晶分子之倒向的影響,進而改善液晶顯示面板的顯示品質。Furthermore, in this embodiment, the
請參照圖2及圖3,在本實施例中,畫素電極120更具有接觸部123、第一連接部124及第二連接部125。畫素電極120的接觸部123與絕緣層130的接觸窗132重疊。畫素電極120的接觸部123透過絕緣層130的接觸窗132電性連接至主動元件T的第二端Tb。第一連接部124連接於第一子畫素電極121與接觸部123之間。第二連接部125連接於第二子畫素電極122與接觸部123之間。2 and 3, in this embodiment, the
在本實施例中,第一連接部124及第二連接部125可分別直接連接於第一子畫素電極121的第一主幹部121a及第二子畫素電極122的第三主幹部122a,第一連接部124與第一方向x夾有第一銳角α1,第二連接部125與第一方向x夾有第二銳角α2,且第一連接部124與第二連接部125大致上可連接成一V字型。In this embodiment, the
在本實施例中,第一銳角α1與第二銳角α2可相等。然而,本發明不以此為限,根據其它實施例,第一銳角α1與第二銳角α2也可不相等。In this embodiment, the first acute angle α1 and the second acute angle α2 may be equal. However, the present invention is not limited thereto. According to other embodiments, the first acute angle α1 and the second acute angle α2 may not be equal.
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重述。It must be noted here that the following embodiments use the element numbers and part of the content of the foregoing embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖5為本發明另一實施例之畫素陣列基板的上視示意圖。FIG. 5 is a schematic top view of a pixel array substrate according to another embodiment of the invention.
圖6為圖5的一個畫素結構的放大示意圖。FIG. 6 is an enlarged schematic diagram of a pixel structure of FIG. 5.
請參照圖5及圖6,本實施例之畫素陣列基板10A與前述之畫素陣列基板10類似,兩者的差異在於:畫素陣列基板10A之畫素結構PXA的第一連接部124及第二連接部125與畫素陣列基板10之畫素結構PX的第一連接部124及第二連接部125不同。5 and 6, the
具體而言,在本實施例中,第一連接部124直接連接於第一子畫素電極121的第一周邊部121d,且第二連接部125直接連接於第二子畫素電極122的第二周邊部122d。第一子畫素電極121的第一周邊部121d包括分別位於第一主幹部121a之相對兩側的第一導電圖案121d-1及第二導電圖案121d-2,其中第一導電圖案121d-1直接與多個第一分支部121c連接。在本實施例中,第一連接部124係與第二導電圖案121d-2直接連接。第二周邊部122d包括分別位於第三主幹部122a之相對兩側的第三導電圖案122d-1及第四導電圖案122d-2,其中第三導電圖案122d-1直接與多個第二分支部122c連接。在本實施例中,第二連接部125係與第四導電圖案122d-2直接連接。Specifically, in this embodiment, the first connecting
圖7為本發明又一實施例之畫素陣列基板的上視示意圖。FIG. 7 is a schematic top view of a pixel array substrate according to another embodiment of the invention.
圖8為圖7的一個畫素結構的放大示意圖。FIG. 8 is an enlarged schematic diagram of a pixel structure of FIG. 7.
請參照圖7及圖8,本實施例之畫素陣列基板10B與前述之畫素陣列基板10類似,兩者的差異在於:畫素陣列基板10B之畫素結構PXB的第一連接部124及第二連接部125與畫素陣列基板10之畫素結構PX的第一連接部124及第二連接部125不同。7 and 8, the
具體而言,在本實施例中,第一連接部124也直接連接於第一子畫素電極121的第一主幹部121a,且第二連接部125也直接連接於第二子畫素電極122的第三主幹部122a。與畫素結構PX不同的是,在本實施例中,第一連接部124的一部分實質上平行且重疊於資料線DL,第二連接部125的一部分實質上平行且重疊於資料線DL’,且第一連接部124、接觸部123及第二連接部125大致上連接成一ㄩ字形。Specifically, in this embodiment, the first connecting
圖9為本發明再一實施例之畫素陣列基板的上視示意圖。FIG. 9 is a schematic top view of a pixel array substrate according to still another embodiment of the present invention.
圖10為圖9的一個畫素結構的放大示意圖。FIG. 10 is an enlarged schematic diagram of a pixel structure of FIG. 9.
請參照圖9及圖10,本實施例之畫素陣列基板10C與前述之畫素陣列基板10A類似,兩者的差異在於:畫素陣列基板10C之畫素結構PXC的第一連接部124及第二連接部125與畫素陣列基板10A之畫素結構PXA的第一連接部124及第二連接部125不同。9 and 10, the
具體而言,在本實施例中,第一連接部124也直接連接於第一子畫素電極121的第一周邊部121d,且第二連接部125也直接連接於第二子畫素電極122的第二周邊部122d。與畫素結構PXA不同的是,第一連接部124係與第一周邊部121d的第一導電圖案121d-1直接連接,而第二連接部125係與第二周邊部122d的第三導電圖案122d-1直接連接。Specifically, in this embodiment, the
圖11為本發明一實施例之畫素陣列基板的上視示意圖。FIG. 11 is a schematic top view of a pixel array substrate according to an embodiment of the invention.
圖12為圖11的一個畫素結構的放大示意圖。FIG. 12 is an enlarged schematic diagram of a pixel structure of FIG. 11.
請參照圖11及圖12,本實施例之畫素陣列基板10D與前述之畫素陣列基板10B類似,兩者的差異在於:畫素陣列基板10D之畫素結構PXD具有第三連接部126及第四連接部127。第三連接部126連接於第一連接部124與接觸部123之間,其中第一連接部124與第三連接部126夾有第一鈍角β1。第四連接部127連接於第二連接部125與接觸部123之間,其中第二連接部125與第四連接部127夾有第二鈍角β2。第一連接部124、第三連接部126、接觸部123、第四連接部127及第二連接部125大致上連接成一U字型。在本實施例中,第一鈍角β1實質上可等於第二鈍角β2。然而,本發明不限於此,根據其它實施例,第一鈍角β1與第二鈍角β2也可不相等。11 and 12, the
圖13為本發明另一實施例之畫素陣列基板的上視示意圖。圖14為圖13的一個畫素結構的放大示意圖。FIG. 13 is a schematic top view of a pixel array substrate according to another embodiment of the invention. FIG. 14 is an enlarged schematic diagram of a pixel structure of FIG. 13.
請參照圖13及圖14,本實施例之畫素陣列基板10E與前述之畫素陣列基板10B類似,兩者的差異在於:畫素陣列基板10E之畫素結構PXE的畫素電極120更具有會合部128。會合部128設置於接觸窗132外,且連接至接觸部123。第一連接部124連接於第一子畫素電極121與會合部128之間,且第二連接部125連接於第二子畫素電極122與會合部128之間。簡言之,在本實施例中,分岔的第一連接部124及第二連接部125可先會合為同一條走線(即會合部128),再連接至與接觸窗132重疊的接觸部123。13 and 14, the
圖15為本發明又一實施例之畫素陣列基板的上視示意圖。圖16為圖15的一個畫素結構的放大示意圖。FIG. 15 is a schematic top view of a pixel array substrate according to another embodiment of the invention. FIG. 16 is an enlarged schematic diagram of a pixel structure of FIG. 15.
請參照圖15及圖16,本實施例之畫素陣列基板10F與前述之畫素陣列基板10B類似,兩者的差異在於:畫素陣列基板10F之畫素結構PXF的畫素電極120更具有連接線129。連接線129設置於第一子畫素電極121與第二子畫素電極122之間,且連接於第一子畫素電極121之第一周邊部121d的轉角處及第二子畫素電極122之第二周邊部122d的轉角處。此外,畫素結構PXF的畫素電極120可不包括畫素結構PXB的第二連接部125。15 and 16, the
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10、10A、10B、10C、10D、10E、10F:畫素陣列基板 110:基板 120:畫素電極 121:第一子畫素電極 121a:第一主幹部 121b:第二主幹部 121c:第一分支部 121d:第一周邊部 121d-1:第一導電圖案 121d-2:第二導電圖案 122:第二子畫素電極 122a:第三主幹部 122b:第四主幹部 122c:第二分支部 122d:第二周邊部 122d-1:第三導電圖案 122d-2:第四導電圖案 123:接觸部 124:第一連接部 125:第二連接部 126:第三連接部 127:第四連接部 128:會合部 129:連接線 130:絕緣層 132:接觸窗 A-A’:剖線 DL、DL’:資料線 d1、d2、d3、d4:方向 O:主要開口 O1:第一輔助開口 O2:第二輔助開口 PX、PX’、PXA、PXB、PXC、PXD、PXE、PXF:畫素結構 SL:掃描線 T:主動元件 Ta:第一端 Tb:第二端 Tc:控制端 Td:半導體圖案 W:寬度 W1、w1、W2、w2:線寬 x:第一方向 y:第二方向 α1:第一銳角 α2:第二銳角 β1:第一鈍角 β2:第二鈍角10, 10A, 10B, 10C, 10D, 10E, 10F: pixel array substrate 110: substrate 120: pixel electrode 121: The first sub-pixel electrode 121a: The first main cadre 121b: The second main cadre 121c: The first branch 121d: the first peripheral part 121d-1: The first conductive pattern 121d-2: second conductive pattern 122: second sub-pixel electrode 122a: The third main cadre 122b: The fourth main cadre 122c: The second branch 122d: second peripheral part 122d-1: third conductive pattern 122d-2: Fourth conductive pattern 123: Contact 124: The first connection part 125: second connection part 126: The third connection part 127: The fourth connection part 128: Meeting Department 129: Connection line 130: insulating layer 132: contact window A-A’: Sectional line DL, DL’: data line d1, d2, d3, d4: direction O: main opening O1: First auxiliary opening O2: second auxiliary opening PX, PX’, PXA, PXB, PXC, PXD, PXE, PXF: pixel structure SL: scan line T: Active component Ta: the first end Tb: second end Tc: control terminal Td: semiconductor pattern W: width W1, w1, W2, w2: line width x: first direction y: second direction α1: The first acute angle α2: second acute angle β1: the first obtuse angle β2: second obtuse angle
圖1為本發明一實施例之畫素陣列基板的上視示意圖。 圖2為圖1的一個畫素結構的放大示意圖。 圖3為本發明一實施例之畫素陣列基板的剖面示意圖。 圖4為採用本發明之一實施例的畫素結構的液晶顯示面板在電壓驅動下的放大示意圖。 圖5為本發明另一實施例之畫素陣列基板的上視示意圖。 圖6為圖5的一個畫素結構的放大示意圖。 圖7為本發明又一實施例之畫素陣列基板的上視示意圖。 圖8為圖7的一個畫素結構的放大示意圖。 圖9為本發明再一實施例之畫素陣列基板的上視示意圖。 圖10為圖9的一個畫素結構的放大示意圖。 圖11為本發明一實施例之畫素陣列基板的上視示意圖。 圖12為圖11的一個畫素結構的放大示意圖。 圖13為本發明另一實施例之畫素陣列基板的上視示意圖。 圖14為圖13的一個畫素結構的放大示意圖。 圖15為本發明又一實施例之畫素陣列基板的上視示意圖。 圖16為圖15的一個畫素結構的放大示意圖。FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention. Fig. 2 is an enlarged schematic diagram of a pixel structure of Fig. 1. 3 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. 4 is an enlarged schematic diagram of a liquid crystal display panel adopting a pixel structure according to an embodiment of the present invention under voltage driving. FIG. 5 is a schematic top view of a pixel array substrate according to another embodiment of the invention. FIG. 6 is an enlarged schematic diagram of a pixel structure of FIG. 5. FIG. 7 is a schematic top view of a pixel array substrate according to another embodiment of the invention. FIG. 8 is an enlarged schematic diagram of a pixel structure of FIG. 7. FIG. 9 is a schematic top view of a pixel array substrate according to still another embodiment of the present invention. FIG. 10 is an enlarged schematic diagram of a pixel structure of FIG. 9. FIG. 11 is a schematic top view of a pixel array substrate according to an embodiment of the invention. FIG. 12 is an enlarged schematic diagram of a pixel structure of FIG. 11. FIG. 13 is a schematic top view of a pixel array substrate according to another embodiment of the invention. FIG. 14 is an enlarged schematic diagram of a pixel structure of FIG. 13. FIG. 15 is a schematic top view of a pixel array substrate according to another embodiment of the invention. FIG. 16 is an enlarged schematic diagram of a pixel structure of FIG. 15.
10:畫素陣列基板 10: Pixel array substrate
110:基板 110: substrate
DL、DL’:資料線 DL, DL’: data line
PX、PX’:畫素結構 PX, PX’: Pixel structure
SL:掃描線 SL: scan line
x:第一方向 x: first direction
y:第二方向 y: second direction
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TWI708225B (en) | 2020-10-21 |
CN111123590B (en) | 2022-07-19 |
CN111123590A (en) | 2020-05-08 |
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