TW202044714A - Fingerprint sensing module with enhanced electrostatic discharge protection and electric device integrates the electrostatic discharge protection unit and a fingerprint sensor module - Google Patents

Abstract

A fingerprint sensing module with enhanced electrostatic discharge protection comprises: a sensing unit, a sensing signal readout unit, a driving unit, a control unit, and a plurality of electrostatic discharge protection unit. Each electrostatic discharge protection unit has an input end to couple with each sensing electrode of the sensing unit and an output end to couple with each signal readout device of the sensing signal readout unit. The electrostatic discharge protection unit includes: a first electrostatic discharge protection device having one end coupled to the input end and the output end, and the other end coupled to a working voltage; a second electrostatic discharge protection device having one end coupled to the input and the output and the other end coupled to a common grounding voltage; and a voltage clamping device coupled between the working voltage and the common grounding voltage.

Description

Fingerprint sensing module and electronic device with enhanced electrostatic discharge protection

The present invention relates to the technical field of fingerprint sensing, in particular to a fingerprint sensing module and electronic device with enhanced electrostatic discharge protection.

As financial transactions such as mobile payment and electronic securities orders gradually use electronic products such as smart phones and smart wearable products as the main operating platforms, the biometric identification technology-based identity recognition system is integrated into these smart types Mobile electronic devices are also getting more and more attention. Biometric identification technology uses the inherent physiological characteristics of the human body as the identification basis for individual organisms, such as: iris (Iris), face (Face), voice print (Voice), fingerprint (Fingerprint) and other physiological characteristics .

At present, capacitive fingerprint sensing modules integrated into a single chip through standard CMOS manufacturing processes and pixel circuits have been widely used in various electronic products. Figure 1 shows a cross-sectional view of a capacitive fingerprint sensor module. As shown in FIG. 1, the capacitive fingerprint sensing module 1'mainly includes a pixel circuit integrated unit 11' and a sensing electrode unit 12', wherein a protective layer 13' covers the sensing electrode unit 12' , And the sensing electrode unit 12' includes a plurality of sensing electrodes 121'. On the other hand, the pixel circuit integrated unit 11' includes a substrate 111' and a sensing circuit fabricated in the substrate 111', and the sensing circuit includes a plurality of P-type MOS transistors 112' and a plurality of N-type MOS transistor 113'. When the user's finger presses the capacitive fingerprint sensor module 1', a ridge sensing capacitor Cr is formed between the ridge of the finger surface and the sensing electrode 121', and the valley of the finger surface A valley sensing capacitor Cv is formed between) and the sensing electrode 121'.

As shown in Figure 1, when a finger touches the capacitive fingerprint sensor module 1', the electrostatic charge released by the fingertip (shown as a positive charge in Figure 1) may enter the sensing circuit through the sensing electrode unit 12' and cause Damage to the P-type MOS transistor 112' and/or the N-type MOS transistor 113'. Therefore, the chip of the existing capacitive fingerprint sensor module 1'usually has an electrostatic discharge (Electro Static Discharge, ESD) protection design. For example, US Pat. No. 7,076,089 inserts a plurality of ESD protection electrode units between a plurality of the sensing electrodes, and makes the electrode of each ESD protection electrode unit higher than each of the sensing electrodes. In this way, the ESD protection design on the chip of the capacitive fingerprint sensing module is completed. Furthermore, Chinese Patent Publication No. CN106033531A designs the ESD protection electrode unit as a plurality of cross-shaped electrodes, and each of the cross-shaped electrodes is located between any four sensing electrodes. Furthermore, Chinese Patent Publication No. CN106033531A also changes the design of the ESD protection electrode unit into a plurality of horizontal electrodes and a plurality of vertical electrodes.

Simply put, US Patent No. US7,076,089 and Chinese Patent Publication No. CN106033531A both achieve the ESD protection design on the chip of the capacitive fingerprint sensor module by arranging ESD protection electrodes between the sensing electrodes. However, the ESD protection electrode is coupled to the ground (GND) in the chip. This design does not guarantee that both the positive and negative static charges can pass through the ESD protection electrode and be directly discharged through the ground. Drop.

In view of this, Chinese Patent Publication No. CN105701440A discloses another fingerprint sensor with electrostatic protection. FIG. 2 shows a connection diagram of an electrostatic protection unit and a sensing electrode unit. The cross-sectional view of the sensing electrode unit 12' shown in FIG. 2 can refer to that shown in FIG. However, the difference from the one shown in FIG. 1 is that the sensing electrode unit 12' of FIG. 2 further includes a plurality of first ESD electrodes 201' arranged horizontally and a plurality of second ESD electrodes 202' arranged vertically. According to the disclosure of Chinese Patent Publication No. CN105701440A, both ends of the plurality of first ESD electrodes 201' are coupled with a set of ESD protection units 31', and the ESD protection units 31' include a first diode 311 'With a second diode 312'. By adding the ESD protection unit 31' composed of the first diode 311' and the second diode 312' to the chip of the capacitive fingerprint sensor module, both positive and negative electrostatic charges can pass through A plurality of the second ESD electrodes 202', a plurality of the first ESD electrodes 201', and a plurality of the ESD protection units 31' are directly discharged through the ground.

Fig. 3 is a circuit diagram of an ESD protection unit composed of a first diode and a second diode. As shown in FIG. 3, the first diode 311' is usually a diode connected P-type MOSFET (Diode connected P-type MOSFET), and the second diode 312' is usually a diode connected Diode connected N-type MOSFET in bulk form. It is worth noting that the fingerprint recognition chip disclosed in US Patent No. US9,563,802 also has an ESD protection design of a complex array of ESD protection units 31' as shown in FIGS. 2 and 3. However, it must be noted that when the finger touches the capacitive fingerprint sensor module, the electrostatic charge may form a high ESD voltage between the V _DD terminal and the V _SS terminal. In practice, it is found that this high ESD voltage has a great chance of causing damage to the first diode 311' and/or the second diode 312'. It can be seen from the above description that even though many electrostatic protection circuits used in capacitive fingerprint sensor chips have been disclosed, the electrostatic protection circuits disclosed in the prior art clearly still have areas for improvement.

It can be seen from the above description that there is an urgent need in the art for a fingerprint sensing module with enhanced electrostatic discharge protection.

One purpose of the present invention is to integrate an electrostatic discharge protection unit and a fingerprint sensing module to provide a fingerprint sensing module with enhanced electrostatic discharge protection.

Another object of the present invention is to add parasitic elements in the sensing signal readout unit of the fingerprint sensing module, so as to improve the protection capability of the sensing signal readout unit against electrostatic discharge.

To achieve the above objective, the present invention proposes a fingerprint sensing module with enhanced electrostatic discharge protection, which includes:

A sensing unit, including a plurality of sensing electrodes;

A sensing signal readout unit, including a plurality of signal readers;

A driving unit coupled to a plurality of said sensing electrodes;

A control unit coupled to the driving unit and the sensing signal readout unit; and

A plurality of electrostatic discharge protection units, wherein each of the electrostatic discharge protection units has an input end coupled to the sensing electrode, and an output end coupled to the signal reader;

Each of the electrostatic discharge protection units includes: a first electrostatic discharge protection element, one end of which is coupled to the input terminal and the output terminal, and the other end of which is coupled to a working voltage; and a second electrostatic discharge protection element One end of the element is coupled to the input end and the output end, and the other end is coupled to a common ground voltage; and a voltage clamping element is coupled between the working voltage and the common ground voltage.

In one embodiment, the fingerprint sensing module with enhanced electrostatic discharge protection further includes a signal processing unit, and the signal processing unit is coupled to the sensing signal reading unit.

In a possible embodiment, both the first ESD protection element and the second ESD protection element can be a diode or a metal oxide half field effect transistor connected in the form of a diode.

In a possible embodiment, the voltage clamping element may be an N-type MOSFET or a P-type MOSFET.

In one embodiment, the signal reader includes:

An operational amplifier having a negative input terminal, a positive input terminal and an output terminal, the negative input terminal is used to couple a sensing input signal via a capacitor to be measured, and the positive input terminal is coupled to the common ground voltage;

A feedback capacitor, coupled between the negative input terminal and the output terminal of the operational amplifier;

A first switch, the channel of which is connected in parallel with the feedback capacitor; and

A second switch whose channel is coupled between the negative input terminal of the operational amplifier and the common ground voltage.

In one embodiment, the first switch is a first MOSFET, and there is a first parasitic diode between the drain of the first MOSFET and the silicon substrate.

In one embodiment, the second switch is a second MOSFET, and there is a second parasitic diode between the drain and the source of the second MOSFET.

In one embodiment, the signal reader includes:

An operational amplifier having a negative input terminal, a positive input terminal and an output terminal, the negative input terminal is used to couple a sensing input signal via a capacitor to be measured, and the positive input terminal is coupled to the common ground voltage;

A feedback capacitor, coupled between the negative input terminal and the output terminal of the operational amplifier;

A first switch whose channel is connected in parallel with the feedback capacitor;

A second switch, the channel of which is coupled between the negative input terminal of the operational amplifier and the capacitor under test; and

A third switch, one channel terminal of which is coupled to the operating voltage, and the other channel terminal of which is coupled between the capacitor to be measured and the second switch, and the third switch is a third metal oxide half field effect Transistor, and there is a third parasitic diode between the drain and the source of the third MOSFET.

In addition, the present invention further provides an electronic device having the fingerprint sensing module with enhanced electrostatic discharge protection as described above.

In possible embodiments, the electronic device may be a smart phone, a tablet computer, a notebook computer, an all-in-one computer, a door phone, an electronic door lock, or a fingerprint recognition device.

In order to enable your reviewer to further understand the structure, features, purpose, and advantages of the present invention, the drawings and detailed descriptions of preferred specific embodiments are attached as follows.

4 is a structural diagram of an embodiment of the fingerprint sensor module with enhanced electrostatic discharge protection of the present invention. As shown in FIG. 4, the fingerprint sensing module 1 with enhanced electrostatic discharge protection of the present invention mainly includes: a sensing unit 10, a sensing signal reading unit 11, a driving unit 12, a control unit 13, and a plurality of A ESD protection unit 14. FIG. 5 is a connection diagram of the sensing unit, the electrostatic discharge protection unit and the sensing signal readout unit of FIG. 4. In the present invention, the sensing unit 10 includes a plurality of sensing electrodes 101, and a protective layer 102 is covered on the plurality of sensing electrodes 101. Furthermore, the sensing signal readout unit 11 includes a plurality of signal readers 111, and each of the signal readers 111 is coupled to the sensing electrode 101. On the other hand, the driving unit 12 is coupled to a plurality of the sensing electrodes 101, and the control unit 13 is coupled to the driving unit 12 and the sensing signal readout unit 11. As shown in FIG. 4, the fingerprint sensing module 1 with enhanced electrostatic discharge protection of the present invention further includes a signal processing unit 15 coupled to the sensing signal reading unit 11.

Please refer to Figure 4 and Figure 5 repeatedly. In particular, in the present invention, each of the electrostatic discharge protection units 14 is coupled to the sensing electrode 101 and the signal reader 111 with an input terminal 14in and an output terminal 14out, respectively. In addition, each of the electrostatic discharge protection units 14 includes: a first electrostatic discharge protection element 141, a second electrostatic discharge protection element 142, and a voltage clamping element 143; wherein, the first electrostatic discharge protection element 141 is coupled with one end thereof The input terminal 14in and the output terminal 14out are connected, and the other terminal is coupled to a working voltage V _DD . On the other hand, the second ESD protection element 142 has one end coupled to the input end 14in and the output end 14out, and the other end is coupled to a common ground voltage V _SS . Furthermore, the voltage clamping element 143 is coupled between the working voltage V _DD and the common ground voltage V _SS . When the finger touches the capacitive fingerprint sensor module, the electrostatic charge may form a high ESD voltage between the V _DD terminal and the V _SS terminal. The voltage clamping element 143 can play a role in releasing the high ESD voltage. , To prevent the high ESD voltage from directly damaging the first electrostatic discharge protection element 141 and the second electrostatic discharge protection element 142.

Continue to refer to FIG. 6, which is a circuit block diagram of the electrostatic discharge protection unit of FIG. 4. Please also refer to FIG. 7, which is a circuit structure diagram showing four implementation modes of the electrostatic discharge protection unit of FIG. 4. It is supplemented that FIG. 6 depicts the first line parasitic resistance 14pa1 and the second line parasitic resistance 14pa2. These two line parasitic resistances 14pa2 are disclosed by the prior art and used to reduce the electrostatic charge between the V _DD terminal and the V _DD terminal. _The high ESD voltage formed between the _SS terminals directly damages the first electrostatic discharge protection element 141 and the second electrostatic discharge protection element 142. On the other hand, it can be seen from the circuit structure (a) of FIG. 7 that the first electrostatic discharge protection element 141 is a diode, and its positive electrode is coupled to the input terminal 14in and the output terminal 14out, and its negative electrode Coupled to the working voltage V _DD . The second ESD protection element 142 is also a diode, and its negative electrode is coupled to the input terminal 14in and the output terminal 14out, and its positive electrode is coupled to the common ground terminal voltage V _SS . Furthermore, the voltage clamping element 143 is an N-type MOSFET, and its drain is coupled to the working voltage V _DD and the negative electrode of the first electrostatic discharge protection element 141 (diode), and The gate and source are coupled to the common ground terminal voltage V _SS and the anode of the second electrostatic discharge protection element 142 (diode). In particular, by adding the voltage clamping element 143 (N-type metal oxide half field effect transistor) in the ESD protection unit 14, the parasitic resistance of the first line 14pa1 and the parasitic resistance of the second line can be reduced. The use of the resistor 14pa2, or directly remove the first line parasitic resistance 14pa1 and the second line parasitic resistance 14pa2 from the structure of the electrostatic discharge protection unit 14.

Furthermore, it can be seen from the circuit structure (b) of FIG. 7 that the voltage clamping element 143 can also be a P-type MOSFET, and its source and gate are coupled to the working voltage V _DD and the The negative electrode of the first electrostatic discharge protection element 141 (diode), and its drain is coupled to the common ground terminal voltage V _SS and the positive electrode of the second electrostatic discharge protection element 142 (diode). On the other hand, according to the circuit architecture (c) and the circuit architecture (d) of FIG. 7, it can be known that the first electrostatic discharge protection element 141 may also be a P-type metal oxide half field effect transistor connected in the form of a diode. connected p-type MOSFET), and the second electrostatic discharge protection element 142 can also be an N-type metal oxide half field effect transistor connected in the form of a diode. It must be particularly emphasized that, in order to clearly highlight the connection between the electrostatic discharge protection unit 14 and the sensing signal readout unit 14 and the plurality of sensing electrodes 101, FIG. 4 shows the electrostatic discharge protection unit 14, sensing The signal readout unit 14 and the plurality of sensing electrodes 101 are shown separately. However, when the sensing unit 10 is manufactured, the electrostatic discharge protection unit 14 can be integrated into the sensing unit 10. Alternatively, when manufacturing the chip of the sensing signal readout unit 14, the electrostatic discharge protection unit 14 can be integrated into the chip.

It is worth noting that the present invention further designs an electrostatic discharge protection design in each of the signal readers 111. 8a, 8b, and 8c show circuit structure diagrams of three embodiments of the signal reader of FIG. 4. It can be seen from FIG. 8a that the signal reader 111 is a capacitance-to-voltage converter, and mainly includes: an operational amplifier 1111, a feedback capacitor 1112, a first switch 1113, and a second switch 1114; wherein, the The feedback capacitor 1112 is coupled between a negative input terminal and an output terminal of the operational amplifier 1111, and the channel of the first switch 1113 is connected in parallel with the feedback capacitor 1112. On the other hand, the channel of the second switch 1114 is coupled between the negative input terminal of the operational amplifier 1111 and the common ground voltage. In order to make the signal reader 111 have electrostatic discharge protection function, a first metal oxide half field effect transistor can be used as the first switch 1113, and the drain of the first metal oxide half field effect transistor There is a first parasitic diode between the electrode and the silicon substrate. At the same time, a second MOSFET is used as the second switch 1114, and there is a second parasitic diode between the drain and the source of the second MOSFET. Engineers familiar with electronic circuit design should understand that, as shown in FIG. 8b, in practical applications, of course, only the second switch 1114 can be designed with a parasitic diode. Alternatively, a third switch having a parasitic diode can be further added to the circuit structure of the signal reader 111. As shown in FIG. 8c, one channel end of the third switch 1115 is coupled to the operating voltage, and the other channel end is coupled between the capacitor under test 1110 and the second switch 1114; and, the third switch 1115 The switch 1115 is a third MOSFET, and there is a third parasitic diode between the drain and the source of the third MOSFET.

A MOSFET with a parasitic diode between the drain and the source is often used as a switching element. However, the present invention is specifically designed to have a parasitic diode between the drain of the MOSFET and the substrate (or body). Fig. 9a shows a layout diagram and a cross-sectional view of an N-type MOSFET designed in the present invention, and Fig. 9b shows a layout diagram and a cross-sectional view of a general N-type MOSFET. Among them, cut the layout drawing (a) along the section line A-A to obtain the sectional view (a). Comparing Figure 9a and Figure 9b, it can be easily found that the present invention increases the width of the diffusion region of the drain, so that a parasitic diode is formed between the drain of the MOSFET and the substrate (substrate). body. On the other hand, FIG. 10a shows a layout diagram and a cross-sectional view of a P-type MOSFET designed by the present invention, and FIG. 10b shows a layout diagram and a cross-sectional view of a general P-type MOSFET. Among them, cut the layout diagram (a) along the section line B-B to obtain the section view (a). Comparing FIG. 10a and FIG. 10b, it can be understood that, in the present invention, a parasitic diode is formed between the drain of the MOSFET and the substrate (substrate) by increasing the width of the diffusion region of the drain.

In this way, the above description has completely and clearly described the fingerprint sensor module, electronic device, and electronic device with enhanced electrostatic discharge protection of the present invention; and from the above, it can be seen that the present invention has the following advantages:

(1) The present invention is an improvement on the conventional electrostatic discharge protection unit, and in particular integrates a voltage clamping element into the electrostatic discharge protection unit, and further combines the electrostatic discharge protection unit with the sensing unit of the fingerprint sensor module and /Or the sensing signal readout unit is integrated to obtain a fingerprint sensing module with enhanced electrostatic discharge protection.

(2) The present invention further adds a parasitic element to the signal reader of the sensing signal readout unit, and uses the parasitic element to improve the protection capability of the sensing signal readout unit against electrostatic discharge.

It must be emphasized that the foregoing disclosures in this case are preferred embodiments, and any partial changes or modifications that are derived from the technical ideas of this case and are easily inferred by those who are familiar with the art will not deviate from the patent of this case. Right category.

In summary, regardless of the purpose, means and effects of this case, it is shown that it is very different from the conventional technology, and its first invention is suitable for practicality, and it does meet the patent requirements of the invention. Please check it out and grant the patent as soon as possible. Society is for the best prayer.

<The present invention> 1: Fingerprint sensor module with enhanced electrostatic discharge protection 10: Sensing unit 11: Sensing signal readout unit 12: drive unit 13: Control unit 14: Electrostatic discharge protection unit 15: signal processing unit 101: sensing electrode 102: protective layer 111: Signal Reader 14in: input 14out: output terminal 141: The first electrostatic discharge protection component 142: The second electrostatic discharge protection component 143: Voltage Clamping Components 14pa1: Parasitic resistance of the first line 14pa2: Parasitic resistance of the second line 1111: operational amplifier 1112: feedback capacitor 1113: First switch 1114: second switch 1110: Capacitance to be measured 1115: third switch ＜Acquaintances＞ 1’: Capacitive fingerprint sensor module 11’: Pixel circuit integrated unit 12’: Sensing electrode unit 13’: Protective layer 121’: Sensing electrode 111’: Substrate 112’: P-type MOS transistor 113’: N-type MOS transistor 201’: The first ESD electrode 202’: The second ESD electrode 31’: ESD protection unit 311’: The first diode 312’: The second diode

Figure 1 is a cross-sectional view of a capacitive fingerprint sensing module; Figure 2 is a connection diagram of an electrostatic protection unit and a sensing electrode unit; Figure 3 is a diagram of an ESD protection unit composed of a first diode and a second diode Circuit diagram; FIG. 4 is a structural diagram of an embodiment of the fingerprint sensing module with enhanced electrostatic discharge protection of the present invention; FIG. 5 is a connection diagram of the sensing unit, the electrostatic discharge protection unit and the sensing signal readout unit of FIG. 4 Fig. 6 is a circuit block diagram of the ESD protection unit of Fig. 4; Figs. 7a-d are circuit diagrams showing four implementations of the ESD protection unit of Fig. 4; Fig. 8a is the signal reader of Fig. 4 A circuit structure diagram of an embodiment; FIG. 8b is a circuit structure diagram of another embodiment of the signal reader of FIG. 4; FIG. 8c is a circuit structure diagram of another embodiment of the signal reader of FIG. 4; 9a is the layout and cross-sectional view of the N-type MOSFET designed by the present invention; Figure 9b is the layout and cross-sectional view of the general N-type MOSFET; Figure 10a is the layout and cross-sectional view of the P-type MOSFET designed by the present invention; and Figure 10b is the general Layout and cross-sectional view of the P-type MOSFET.

10: Sensing unit

11: Sensing signal readout unit

14: Electrostatic discharge protection unit

101: sensing electrode

102: protective layer

111: Signal Reader

14in: input

14out: output terminal

Claims (10)

A fingerprint sensing module with enhanced electrostatic discharge protection, including: a sensing unit including a plurality of sensing electrodes; a sensing signal reading unit including a plurality of signal readers; a driving unit coupled to a plurality of sensing electrodes The sensing electrode; a control unit coupled to the driving unit and the sensing signal readout unit; and a plurality of electrostatic discharge protection units, wherein each of the electrostatic discharge protection units is coupled to one of the Sensing electrodes, and an output terminal coupled to the signal reader; wherein, each of the ESD protection units includes: a first ESD protection element, one end of which is coupled to the input terminal and the output A second ESD protection element, one end of which is coupled to the input terminal and the output end, and the other end of which is coupled to a common ground voltage, and a voltage clamping element , Coupled between the working voltage and the common ground voltage. The fingerprint sensing module with enhanced electrostatic discharge protection described in the first item of the patent application further includes a signal processing unit, and the signal processing unit is coupled to the sensing signal reading unit. The fingerprint sensor module with enhanced electrostatic discharge protection described in the first item of the scope of patent application, wherein the first electrostatic discharge protection element and the second electrostatic discharge protection element are both selected from a diode and a Any one of the group consisting of metal oxide half field effect transistors in the form of a diode. The fingerprint sensor module with enhanced electrostatic discharge protection as described in the first item of the patent application, wherein the voltage clamping element is selected from N-type MOSFET and P-type MOSFET. Any one of the formed groups. For example, the fingerprint sensing module with enhanced electrostatic discharge protection described in item 1 of the scope of patent application, wherein the signal reader includes: an operational amplifier with a negative input terminal, a positive input terminal, and an output terminal. The negative input terminal is used to couple a sensing input signal via a capacitor to be measured, and the positive input terminal is coupled to the common ground voltage; a feedback capacitor is coupled to the negative input terminal and the output terminal of the operational amplifier Between; a first switch whose channel is connected in parallel with the feedback capacitor; and a second switch whose channel is coupled between the negative input terminal of the operational amplifier and the common ground voltage. The fingerprint sensing module with enhanced electrostatic discharge protection as described in item 5 of the scope of patent application, wherein the first switch is a first metal oxide half field effect transistor, and the drain of the first metal oxide half field effect transistor There is a first parasitic diode between the electrode and the silicon substrate. The fingerprint sensor module with enhanced electrostatic discharge protection described in item 6 of the scope of patent application, wherein the second switch is a second metal oxide half field effect transistor, and the drain of the second metal oxide half field effect transistor There is a second parasitic diode between the pole and the source. For example, the fingerprint sensing module with enhanced electrostatic discharge protection described in item 1 of the scope of patent application, wherein the signal reader includes: an operational amplifier with a negative input terminal, a positive input terminal and an output terminal. The negative input terminal is used to couple a sensing input signal via a capacitor to be measured, and the positive input terminal is coupled to the common ground voltage; a feedback capacitor is coupled to the negative input terminal and the output terminal of the operational amplifier Between; a first switch whose channel is connected in parallel with the feedback capacitor; a second switch whose channel is coupled between the negative input terminal of the operational amplifier and the capacitor under test; and a third switch One of the channel ends is coupled to the operating voltage, and the other channel end is coupled between the capacitor under test and the second switch, and the third switch is a third metal oxide half field effect transistor, and There is a third parasitic diode between the drain electrode and the source electrode of the third MOSFET. An electronic device having a fingerprint sensing module with enhanced electrostatic discharge protection as described in any one of items 1-9 in the scope of patent application. The electronic device described in item 9 of the scope of patent application is selected from the group consisting of smart phones, tablet computers, notebook computers, all-in-one computers, door phones, electronic door locks, and fingerprint recognition devices A device in.

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