TW202041706A - Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium Download PDF

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TW202041706A
TW202041706A TW109109105A TW109109105A TW202041706A TW 202041706 A TW202041706 A TW 202041706A TW 109109105 A TW109109105 A TW 109109105A TW 109109105 A TW109109105 A TW 109109105A TW 202041706 A TW202041706 A TW 202041706A
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substrate
chamber
heating
processing
wafer boat
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TW109109105A
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TWI770478B (en
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松井智哉
立野秀人
平野誠
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日商國際電氣股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Abstract

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

Description

基板處理裝置及半導體裝置之製造方法暨記錄媒體Substrate processing device, semiconductor device manufacturing method and recording medium

本發明係關於半導體裝置之製造步驟中對基板進行處理之基板處理裝置及半導體裝置之製造方法暨記錄媒體。The present invention relates to a substrate processing device for processing a substrate in a manufacturing step of a semiconductor device, a method of manufacturing a semiconductor device, and a recording medium.

於半導體裝置之製造步驟中的基板(晶圓)的熱處理時，係例如使用縱型基板處理裝置。於縱型基板處理裝置中，藉由基板保持具將複數基板配列保持於垂直方向，並將基板保持具搬入至處理室內。其後，於對處理室加熱之狀態將處理氣體導入至處理室內，對基板進行薄膜形成處理。例如記載於專利文獻1。 [先前技術文獻] [專利文獻]In the heat treatment of the substrate (wafer) in the manufacturing step of the semiconductor device, for example, a vertical substrate processing apparatus is used. In the vertical substrate processing apparatus, a plurality of substrates are arranged in a vertical direction by a substrate holder, and the substrate holder is carried into the processing chamber. Thereafter, the processing gas is introduced into the processing chamber while the processing chamber is heated, and the substrate is subjected to a thin film formation process. For example, it is described in Patent Document 1. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2003-100736號公報[Patent Document 1] Japanese Patent Laid-Open No. 2003-100736

(發明所欲解決之問題)(The problem to be solved by the invention)

本發明係提供可提升基板處理之產率的技術。 (解決問題之技術手段)The present invention provides a technology that can increase the yield of substrate processing. (Technical means to solve the problem)

根據本發明之一態樣，例如提供一種技術，其具有：處理基板之處理室；連通於處理室之下方，將上述基板移載至配置於處理室內之基板支撐具的移載室；與連通於移載室之下方，對基板支撐具進行加熱的加熱室。 (對照先前技術之功效)According to one aspect of the present invention, for example, a technique is provided, which has: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support. (Compared with the effect of previous technology)

根據本發明，可提升基板處理之產率。According to the present invention, the yield of substrate processing can be improved.

本發明係關於一種基板處理裝置，其具有：載置基板之基板支撐具；對載置於此基板支撐具之基板進行處理的處理室；連通於此處理室下方，將基板移載至基板支撐具的移載室；連通於此移載室之下方，對基板支撐具與基板進行加熱的加熱室；及使基板支撐具於處理室與移載室與加熱室之間移動的升降機部。The present invention relates to a substrate processing device, which has: a substrate support for placing a substrate; a processing chamber for processing the substrate placed on the substrate support; communicating under the processing chamber to transfer the substrate to the substrate support The transfer chamber of the tool; the heating chamber connected to the lower part of the transfer chamber to heat the substrate support and the substrate; and the elevator part that moves the substrate support between the processing chamber, the transfer chamber and the heating chamber.

又，本發明係一種基板處理方法，其使用具有：載置基板之基板支撐具；對載置於此基板支撐具之基板進行處理的處理室；連通於此處理室下方，將基板移載至基板支撐具的移載室；連通於此移載室之下方，對基板支撐具與基板進行加熱的加熱室；及使基板支撐具於處理室與移載室與加熱室之間移動的升降機部；的基板處理裝置對基板進行處理，其特徵在於，驅動升降機部將於移載室中移載至基板支撐具的基板搬送至加熱室並於加熱室進行加熱，驅動升降機部將經加熱之基板通過連通於加熱室之移載室而搬送至處理室，於處理室對經加熱之基板進行處理。再者，本發明係包括一種基板處理程式，其包含：將在移載室中移載至基板支撐具之基板搬送至加熱室並進行加熱的步驟；將經加熱之基板通過連通於加熱室之移載室而搬送至處理室的步驟；及於處理室對經加熱之基板進行處理的步驟。In addition, the present invention is a substrate processing method that uses a substrate supporting tool for placing a substrate; a processing chamber for processing the substrate placed on the substrate supporting tool; communicating under the processing chamber to transfer the substrate to The transfer chamber of the substrate support; the heating chamber connected to the lower part of the transfer chamber to heat the substrate support and the substrate; and the elevator part that moves the substrate support between the processing chamber, the transfer chamber and the heating chamber ; The substrate processing apparatus for processing substrates, characterized in that the drive lift section will transfer the substrate to the substrate support in the transfer chamber to the heating chamber and heated in the heating chamber, drive the lift section to the heated substrate It is conveyed to the processing chamber through the transfer chamber connected to the heating chamber, and the heated substrate is processed in the processing chamber. Furthermore, the present invention includes a substrate processing program, which includes the steps of transporting the substrate transferred to the substrate support in the transfer chamber to the heating chamber and heating it; and passing the heated substrate through the substrate connected to the heating chamber The step of transferring the chamber to the processing chamber; and the step of processing the heated substrate in the processing chamber.

以下使用圖式說明本發明之實施例。 [實施例1]The following figures illustrate the embodiments of the present invention. [Example 1]

使用圖1，說明實施例1之半導體製造裝置之構成。 本實施形態之半導體製造裝置，係構成為實施作為半導體裝置(device)製造方法中製造步驟之一步驟的熱處理等之基板處理步驟的縱型基板處理裝置(以下稱為基板處理系統)1。如圖1所示，基板處理系統1係對基板10進行處理者，主要由IO台61、大氣搬送室1200、傳送(load lock)室1300、真空搬送室170、基板處理裝置101所構成。Using FIG. 1, the structure of the semiconductor manufacturing apparatus of the first embodiment will be described. The semiconductor manufacturing apparatus of the present embodiment is configured as a vertical substrate processing apparatus (hereinafter referred to as a substrate processing system) 1 that performs substrate processing steps such as heat treatment as one of the manufacturing steps in the manufacturing method of a semiconductor device (device). As shown in FIG. 1, the substrate processing system 1 is a person who processes substrates 10, and is mainly composed of an IO station 61, an atmospheric transfer chamber 1200, a load lock chamber 1300, a vacuum transfer chamber 170, and a substrate processing apparatus 101.

圖1表示作為支撐複數基板10之基板支撐具的晶舟200，下降至設於真空搬送室170側方之腔室180之下方的收納室300的狀態，圖2為表示圖1一部分的圖，表示作為基板支撐具之晶舟200上升而位於第1反應管110之內部的狀態。又，真空搬送室170亦稱為傳送模組170。又，基板處理裝置101亦稱為處理模組101。接著具體說明各構成。1 shows a state in which a wafer boat 200 as a substrate support for supporting a plurality of substrates 10 is lowered to a storage chamber 300 provided below a chamber 180 on the side of a vacuum transfer chamber 170, and FIG. 2 is a diagram showing a part of FIG. 1. It shows a state where the wafer boat 200 as a substrate support is raised and located inside the first reaction tube 110. In addition, the vacuum transfer chamber 170 is also called a transfer module 170. In addition, the substrate processing apparatus 101 is also referred to as a processing module 101. Next, each configuration will be described in detail.

[大氣搬送室‧IO台] 於基板處理系統1之前方，設置IO台(裝載埠)61。IO台61上構成為可複數搭載作為收納容器之艙62。艙62係使用作為搬送矽(Si)基板等基板10的載體，於艙62內，構成為使基板(晶圓)10分別依水平姿勢複數收納。又，艙62內，最多收納25片基板10。[Atmospheric transfer room‧IO station] In front of the substrate processing system 1, an IO station (load port) 61 is provided. The IO stand 61 is configured to be capable of mounting multiple compartments 62 as storage containers. The cabin 62 is used as a carrier for transporting the substrate 10 such as a silicon (Si) substrate, and the cabin 62 is configured such that the substrates (wafers) 10 are accommodated in multiple horizontal positions. In addition, a maximum of 25 substrates 10 are stored in the cabin 62.

於艙62設置蓋60，藉由後述之艙開啟器1210進行開關。艙開啟器1210係對載置於IO台61之艙62之蓋60進行開關，藉由開放、關閉基板搬入搬出口1280，可使基板10對艙62進行出入。藉由未圖示之步驟內搬送裝置(RGV)，艙係對IO台61進行供給及排出。A cover 60 is provided on the cabin 62, and is opened and closed by a cabin opener 1210 described later. The compartment opener 1210 opens and closes the cover 60 of the compartment 62 placed on the IO station 61, and allows the substrate 10 to enter and exit the compartment 62 by opening and closing the substrate loading and unloading port 1280. The IO station 61 is supplied and discharged from the cabin system by an in-step conveying device (RGV) (not shown).

IO台61係鄰接於大氣搬送室1200。大氣搬送室1200係於與IO台61相異之面，連接後述之傳送室1300。The IO station 61 is adjacent to the atmospheric transfer chamber 1200. The atmospheric transfer chamber 1200 is on a side different from the IO station 61, and is connected to the transfer chamber 1300 described later.

於大氣搬送室1200內設置作為移載基板10之第1搬送機器人的大氣搬送機器人1220。如圖所示般，大氣搬送機器人1220係構成為藉由設於大氣搬送室1200之升降機1230進行升降，同時構成為藉由線性致動器1240於左右方向上進行來回移動。In the atmosphere transfer chamber 1200, an atmosphere transfer robot 1220 as a first transfer robot that transfers the substrate 10 is installed. As shown in the figure, the atmospheric transfer robot 1220 is configured to be raised and lowered by an elevator 1230 provided in the atmospheric transfer chamber 1200, and is configured to be moved back and forth in the left and right directions by a linear actuator 1240.

如圖所示，於大氣搬送室1200之上部設置供給清淨氣體的清淨單元1250。As shown in the figure, a cleaning unit 1250 for supplying cleaning gas is provided on the upper part of the air transfer chamber 1200.

如圖所示，於大氣搬送室1200之框體1270之前側，設置：用於對大氣搬送室1200進行基板10之搬入搬出的基板搬入搬出口1280、與艙開啟器1210。在挾持基板搬入搬出口1280而與艙開啟器1210相反側、亦即框體1270之外側，設置IO台(裝載埠)61。As shown in the figure, on the front side of the frame 1270 of the atmospheric transfer chamber 1200, a substrate carrying-in/outlet 1280 for carrying the substrate 10 in and out of the atmospheric carrying chamber 1200 and a cabin opener 1210 are provided. On the side opposite to the compartment opener 1210 while holding the substrate carry-in/out port 1280, that is, the outer side of the frame 1270, IO stations (load ports) 61 are provided.

於大氣搬送室1200之框體1270之後側，設置用於將基板10對傳送室1300進行搬出搬入的基板搬出入口1290。基板搬出入口1290係藉由後述之閘閥1330進行解放、關閉，而可使基板10出入。On the back side of the frame 1270 of the atmospheric transfer chamber 1200, a substrate carry-out entrance 1290 for carrying the substrate 10 out of the transfer chamber 1300 is provided. The substrate carrying-out entrance 1290 is released and closed by a gate valve 1330 described later, so that the substrate 10 can be in and out.

[傳送(L/L)室] 傳送室1300係與大氣搬送室1200鄰接。在構成傳送室1300之框體1310所具有的面中，於與大氣搬送室1200相異之面，係如後述般配置真空搬送室170。傳送室1300係配合大氣搬送室1200之壓力與真空搬送室170之壓力而改變框體1310內之壓力，故構成為可承受負壓的構造。[Transmission (L/L) Room] The transfer chamber 1300 is adjacent to the atmospheric transfer chamber 1200. Among the surfaces of the frame 1310 constituting the transfer chamber 1300, the vacuum transfer chamber 170 is arranged on a surface different from the atmospheric transfer chamber 1200 as described later. The transfer chamber 1300 changes the pressure in the frame 1310 according to the pressure of the atmospheric transfer chamber 1200 and the pressure of the vacuum transfer chamber 170, so it is configured to withstand negative pressure.

框體1310中，在與真空搬送室170鄰接之側，設置基板搬入搬出口1340。基板搬入搬出口1340係藉由閘閥1350進行開放、關閉，而可使基板10出入。In the housing 1310, a substrate loading/unloading port 1340 is provided on the side adjacent to the vacuum transfer chamber 170. The substrate carrying-in/outlet 1340 is opened and closed by the gate valve 1350, so that the substrate 10 can be carried in and out.

再者，於傳送室1300內，設置載置基板10之基板載置台1320。Furthermore, in the transfer chamber 1300, a substrate mounting table 1320 on which the substrate 10 is mounted is provided.

[真空搬送室170] 基板處理系統1係具備作為成為於負壓下搬送基板10之搬送空間的搬送室的真空搬送室(轉移模組)170。於真空搬送室170之各邊，連接著傳送室1300及處理基板10之基板處理裝置101。於真空搬送室170之略中央部，使作為於負壓下移載(搬送)基板10之真空搬送機器人的移載機30，以凸緣35為基部而設置。[Vacuum transfer chamber 170] The substrate processing system 1 includes a vacuum transfer chamber (transfer module) 170 as a transfer chamber serving as a transfer space for transferring the substrate 10 under negative pressure. On each side of the vacuum transfer chamber 170, the transfer chamber 1300 and the substrate processing apparatus 101 for processing the substrate 10 are connected. At the approximate center of the vacuum transfer chamber 170, a transfer machine 30, which is a vacuum transfer robot that transfers (transfers) the substrate 10 under negative pressure, is provided with a flange 35 as a base.

設置於真空搬送室170內之作為真空搬送機器人的移載機30，係如圖所示，構成為藉由升降機構部36及凸緣35而可於維持真空搬送室170之氣密性的同時進行升降。The transfer machine 30, which is a vacuum transfer robot installed in the vacuum transfer chamber 170, is configured as shown in the figure, and is configured to maintain the airtightness of the vacuum transfer chamber 170 by the lifting mechanism portion 36 and the flange 35 Perform lifting.

[基板處理裝置101] 基板處理裝置101係具備：朝鉛直方向延伸的圓筒形狀之第1反應管110；配置於此第1反應管之內側且由第2反應管120所構成的反應管；與設置於第1反應管110之外周，作為第1加熱手段(爐體)的加熱器100。構成反應管之第1反應管110與第2反應管120，係由例如石英或SiC等材料所形成。第1反應管110之內部，係藉由未圖示之手段而對外氣密封成氣密，第2反應管120之內部係形成處理室115。於此，第1反應管110亦稱為外筒、外管、外側管。又，第2反應管120亦稱為內筒、內管、內側管。又，於此例示了由第1反應管110與第2反應管120構成反應管的例子，但並不限定於此。例如，僅由第1反應管110構成反應管時，亦可應用本發明之技術。[Substrate Processing Apparatus 101] The substrate processing apparatus 101 is provided with: a first reaction tube 110 having a cylindrical shape extending in the vertical direction; a reaction tube arranged inside the first reaction tube and constituted by a second reaction tube 120; and a reaction tube arranged in the first reaction tube The outer periphery of the tube 110 is a heater 100 as the first heating means (furnace body). The first reaction tube 110 and the second reaction tube 120 constituting the reaction tube are formed of materials such as quartz or SiC. The inside of the first reaction tube 110 is hermetically sealed to the outside by means not shown in the figure, and the inside of the second reaction tube 120 forms a processing chamber 115. Here, the first reaction tube 110 is also referred to as an outer tube, an outer tube, and an outer tube. In addition, the second reaction tube 120 is also referred to as an inner tube, an inner tube, and an inner tube. In addition, the example in which the first reaction tube 110 and the second reaction tube 120 constitute a reaction tube is illustrated here, but it is not limited to this. For example, when the reaction tube is composed of only the first reaction tube 110, the technique of the present invention can also be applied.

尚且，加熱器110亦可依能夠於上下方向上進行區域控制之方式，構成為於上下方向具有複數區域的區域加熱器。Furthermore, the heater 110 may be configured as an area heater having a plurality of areas in the up and down direction in a manner capable of performing area control in the up and down direction.

[基板支撐具] 作為基板支撐具之晶舟200，係經由隔熱部150而支撐於支撐桿160。晶舟200係於被複數圓板201所區隔之空間中，在安裝於支柱202之基板支撐部203上載置基板10，藉此將複數片、例如5片之基板10於垂直方向上多段地支撐。晶舟200係由例如石英或SiC等材料所形成。藉由隔熱部150與晶舟200構成基板支撐體。於基板處理時，晶舟200係如圖2所示，收納於第2反應管120之內部。又，於此例示了於晶舟200上支撐了5片基板10的例子，但並不限定於此。例如亦可構成為可支撐5~50片左右之基板10的晶舟200。又，圓板201亦稱為隔件。[Substrate Support] The wafer boat 200 as a substrate support is supported by the support rod 160 via the heat insulation portion 150. The wafer boat 200 is in a space partitioned by a plurality of circular plates 201, and the substrate 10 is placed on the substrate support portion 203 installed on the pillar 202, thereby placing a plurality of, for example, 5 substrates 10 in multiple stages in the vertical direction. support. The wafer boat 200 is formed of materials such as quartz or SiC. The heat insulating portion 150 and the wafer boat 200 constitute a substrate support. During substrate processing, the wafer boat 200 is housed in the second reaction tube 120 as shown in FIG. 2. In addition, an example in which five substrates 10 are supported on the wafer boat 200 is illustrated here, but it is not limited to this. For example, it may be configured as a wafer boat 200 that can support about 5 to 50 substrates 10. In addition, the circular plate 201 is also called a spacer.

[隔熱部150] 隔熱部150係具有上下方向之熱傳導或傳遞變小的構造。又，亦可構成為於隔熱部150之內部具有空洞。尚且，如圖所示般，亦可於隔熱部150之下面形成孔151。藉由設置此孔151，則即使未將隔熱部150之壁面加厚，仍可使隔熱部150之內部與外部不發生壓力差。 尚且，於隔熱部150內，亦可設置蓋加熱器152。[Insulation Department 150] The heat insulation portion 150 has a structure where heat conduction or transmission in the vertical direction is reduced. In addition, it may be configured to have a cavity inside the heat insulation part 150. Furthermore, as shown in the figure, a hole 151 may be formed under the heat insulating portion 150. By providing this hole 151, even if the wall surface of the heat insulation part 150 is not thickened, the pressure difference between the inside and the outside of the heat insulation part 150 can still be prevented. Furthermore, a cover heater 152 may also be provided in the heat insulation part 150.

於收納室300內部，配置晶舟200。於收納室300之外部、例如外側下方，設置作為晶舟200之升降機構的晶舟升降機40。Inside the storage chamber 300, a wafer boat 200 is arranged. A wafer boat elevator 40 as a lifting mechanism of the wafer boat 200 is provided outside the storage chamber 300, for example, below the outer side.

於真空搬送室170之內部，以凸緣35為基部，設置作為將基板10於傳送室1300與腔室180之間進行搬送之真空搬送機器人的移載機30。Inside the vacuum transfer chamber 170, with the flange 35 as a base, a transfer machine 30 as a vacuum transfer robot that transfers the substrate 10 between the transfer chamber 1300 and the chamber 180 is provided.

移載機30係具有例如支撐1片之基板10的鉗31、可伸縮之臂32、旋轉軸33、基部34、凸緣35、升降機構部36等。真空搬送室170係藉由凸緣35而構成為維持氣密性。The transfer machine 30 has, for example, a clamp 31 for supporting one substrate 10, a telescopic arm 32, a rotating shaft 33, a base 34, a flange 35, a lifting mechanism 36, and the like. The vacuum transfer chamber 170 is configured by the flange 35 to maintain airtightness.

構成為藉由此升降機構部36，使移載機30作動，而可於傳送室1300與晶舟200之間搬送基板10。The structure is such that the transfer machine 30 is operated by the lifting mechanism portion 36 to transfer the substrate 10 between the transfer chamber 1300 and the wafer boat 200.

[腔室180] 腔室180係設置於第2反應管120之下部，具備移載室330與加熱室320作為收納室300。移載室330係構成為進行將基板10載置(搭載)於晶舟200、或取出的空間。加熱室320係構成為對載置於晶舟200之基板10進行加熱的空間。於腔室180之下部，收納著由支持桿160所支撐的隔熱部150。[Chamber 180] The chamber 180 is provided at the lower part of the second reaction tube 120 and includes a transfer chamber 330 and a heating chamber 320 as the storage chamber 300. The transfer chamber 330 is configured as a space in which the substrate 10 is placed (mounted) on the wafer boat 200 or taken out. The heating chamber 320 is configured as a space for heating the substrate 10 placed on the wafer boat 200. In the lower part of the chamber 180, the heat insulation part 150 supported by the support rod 160 is housed.

尚且，移載室330之垂直方向之長度，構成為較加熱室320之垂直方向之長度更短。換言之，加熱室320之垂直方向之長度，構成為較移載室330之垂直方向更長。藉由構成為如此大小關係，能夠使後述之，於晶舟200載置基板10起至基板10之加熱為止之時間縮短。Moreover, the vertical length of the transfer chamber 330 is configured to be shorter than the vertical length of the heating chamber 320. In other words, the vertical length of the heating chamber 320 is configured to be longer than the vertical direction of the transfer chamber 330. With such a size relationship, it is possible to shorten the time from when the substrate 10 is placed on the wafer boat 200 to the heating of the substrate 10 as described later.

於基板搬入口331，有時設有冷卻流徑190。此時，存在有經加熱之晶舟200、或來自加熱器100、加熱部321之熱被傳導至冷卻流徑190，而後述新基板10之升溫速度降低的課題。A cooling flow path 190 is sometimes provided at the substrate import port 331. At this time, there is a problem that the heated wafer boat 200, or the heat from the heater 100 and the heating part 321 is conducted to the cooling flow path 190, and the temperature rise rate of the new substrate 10 is reduced as described later.

藉由構成為此種大小關係，可使新的基板10遠離冷卻流徑190附近之低溫區域，可改善新基板10之升溫速度。又，此種加熱室320之垂直方向之長度，亦可謂為包括隔熱部150與晶舟200之基板載置區域全體的長度。With such a size relationship, the new substrate 10 can be kept away from the low-temperature region near the cooling flow path 190, and the heating rate of the new substrate 10 can be improved. In addition, the length of the heating chamber 320 in the vertical direction can also be said to be the length of the entire substrate mounting area including the heat insulation portion 150 and the wafer boat 200.

於此，腔室180係由SUS(不鏽鋼)或Al(鋁)等之金屬材料所構成。此時，由於加熱室320，腔室180之收納室300有膨脹情形。此時，如圖1所示般，亦可於腔室180之收納室300之外側設置冷卻流徑190，構成為可將收納室300冷卻。Here, the chamber 180 is made of metal materials such as SUS (stainless steel) or Al (aluminum). At this time, due to the heating chamber 320, the storage chamber 300 of the chamber 180 is expanding. At this time, as shown in FIG. 1, a cooling flow path 190 may be provided on the outer side of the storage chamber 300 of the chamber 180 to be configured to cool the storage chamber 300.

再者，於腔室180之收納室300，安裝著對內部供給惰性氣體的惰性氣體供給管301。由惰性氣體供給管301，亦可對收納室300之內部供給惰性氣體，調整為使收納室300之內部壓力高於第1反應管110之內部壓力。藉由如此構成，可抑制供給至第1反應管110內部之處理室115的處理氣體進入至收納室300內部的情形。Furthermore, in the storage chamber 300 of the chamber 180, an inert gas supply pipe 301 for supplying inert gas to the inside is installed. The inert gas supply pipe 301 can also supply an inert gas to the interior of the storage chamber 300 to adjust the internal pressure of the storage chamber 300 to be higher than the internal pressure of the first reaction tube 110. With this configuration, it is possible to prevent the processing gas supplied to the processing chamber 115 inside the first reaction tube 110 from entering the storage chamber 300.

[加熱室320] 加熱室320係藉由晶舟200、或後述加熱部321加熱基板10的空間，設於移載室330之下方。於加熱室320，如圖1~圖6所示般，亦可形成穿透紅外線之窗(例如石英)310。於此窗之外部，亦可設置由使長度方向於上下方向上對齊之複數之燈加熱器所構成的加熱部321。尚且，於此例示了使用燈加熱器作為加熱部321的例子，但加熱部321之構成並不限定於此。例如，亦可為電阻加熱器。又，如圖7、圖8所示般，亦可為沒有加熱部321、窗310的構成。亦可不設置加熱部321或窗310，藉由經加熱之晶舟200對基板10進行加熱。[Heating Chamber 320] The heating chamber 320 heats the space of the substrate 10 by the wafer boat 200 or the heating part 321 described later, and is provided below the transfer chamber 330. In the heating chamber 320, as shown in FIGS. 1 to 6, a window (such as quartz) 310 that penetrates infrared rays may also be formed. On the outside of this window, a heating part 321 composed of a plurality of lamp heaters aligned in the vertical direction can also be provided. Furthermore, the example in which a lamp heater is used as the heating part 321 is illustrated here, but the structure of the heating part 321 is not limited to this. For example, it may be a resistance heater. In addition, as shown in FIGS. 7 and 8, the heating unit 321 and the window 310 may not be provided. The heating part 321 or the window 310 may not be provided, and the substrate 10 may be heated by the heated wafer boat 200.

[移載室330] 於移載室330，使用移載機30經由基板搬入口331將搭載於晶舟200之基板10由晶舟200取出，並將新基板10載置於晶舟200。又，於基板搬入口331，設有將移載室330與腔室180之間隔離的閘閥(GV)332。[Transfer Room 330] In the transfer chamber 330, the substrate 10 mounted on the wafer boat 200 is taken out from the wafer boat 200 through the substrate transfer port 331 using the transfer machine 30, and the new substrate 10 is placed on the wafer boat 200. In addition, a gate valve (GV) 332 for isolating the transfer chamber 330 and the chamber 180 is provided at the substrate transfer port 331.

晶舟升降機40係支撐著支撐桿160。驅動晶舟升降機40使支撐桿160上下，對第2反應管120進行晶舟200之搬入或搬出。支撐桿160係連接於設於晶舟升降機40之旋轉驅動部42。藉由旋轉驅動部42使支撐桿160旋轉，可使隔熱部150及晶舟200旋轉。將旋轉驅動部42與支撐桿160合併稱為旋轉機構部。The wafer lifter 40 supports the support rod 160. The wafer boat elevator 40 is driven to move the support rod 160 up and down, and the second reaction tube 120 is moved in or out of the wafer boat 200. The support rod 160 is connected to the rotation driving part 42 provided on the wafer boat elevator 40. By rotating the support rod 160 by the rotation driving part 42, the heat insulation part 150 and the wafer boat 200 can be rotated. The rotation drive part 42 and the support rod 160 are combined together as a rotation mechanism part.

基板處理系統1係將基板處理所使用之氣體，從未圖示之氣體供給手段，由配置於第2反應管120內部之作為氣體供給部的噴嘴130進行供給。由噴嘴130所供給之氣體，係視所成膜之膜的種類而適當更換。由噴嘴130對第2反應管120之內部係供給原料氣體、反應氣體及惰性氣體等。In the substrate processing system 1, a gas used for substrate processing is supplied by a gas supply means (not shown) through a nozzle 130 as a gas supply part arranged inside the second reaction tube 120. The gas supplied from the nozzle 130 is appropriately replaced depending on the type of film to be formed. The nozzle 130 supplies raw material gas, reaction gas, inert gas, etc. to the inside of the second reaction tube 120.

另一方面，由噴嘴130對第2反應管120所供給之氣體中，未用於成膜之反應氣體係通過第2反應管120與第1反應管110間之上側之間隙121及下側之開口部122，由作為排氣部之排氣管140藉由未圖示之排氣泵被排氣至外部。On the other hand, among the gases supplied from the nozzle 130 to the second reaction tube 120, the reaction gas system not used for film formation passes through the upper gap 121 and the lower side between the second reaction tube 120 and the first reaction tube 110 The opening 122 is exhausted to the outside by an exhaust pipe 140 as an exhaust portion by an exhaust pump (not shown).

於第1反應管110之下端部形成有泵吸部111。泵吸部111係藉由設於較加熱器100更靠下側，可於第1反應管110之內部在較泵吸部111更靠上部確保由加熱器100所造成的均熱區域。A pumping part 111 is formed at the lower end of the first reaction tube 110. The pumping part 111 is arranged on the lower side of the heater 100 to ensure a uniform heating area caused by the heater 100 inside the first reaction tube 110 and above the pumping part 111.

第2反應管120之開口部122，係設於泵吸部111所配置之位置的周圍之複數處。藉由將開口部122設置於泵吸部111所配置之位置的周圍、亦即接近腔室180側的側，可抑制由惰性氣體供給管301所供給之惰性氣體所需以上地繞回至處理室側的情形。The opening 122 of the second reaction tube 120 is provided at a plurality of locations around the position where the pumping portion 111 is arranged. By providing the opening 122 around the position where the pumping portion 111 is arranged, that is, on the side close to the chamber 180 side, the inert gas supplied from the inert gas supply pipe 301 can be prevented from circling back to the treatment more than necessary The situation on the side of the room.

作為基板支撐具的晶舟200，係具備直立之複數之支柱202、隔著一定間隔藉由複數支柱202所支撐的圓板201、於石英製之圓板201之間由支柱202所支撐著的基板支撐部203而構成。The wafer boat 200 as a substrate support is provided with a plurality of vertical pillars 202, a circular plate 201 supported by the plurality of pillars 202 at a certain interval, and a quartz circular plate 201 supported by the pillars 202 The substrate support portion 203 is constituted.

晶舟200係將例如5片之基板10，依水平姿勢且彼此中心對齊之狀態於垂直方向上配列而多段支撐。因此，基板10係隔著一定間隔配列。晶舟200由例如石英或SiC等之耐熱性材料所形成。The wafer boat 200 supports multi-stage support by arranging, for example, five substrates 10 in the vertical direction in a horizontal posture and aligned with each other. Therefore, the substrates 10 are arranged at regular intervals. The wafer boat 200 is formed of a heat-resistant material such as quartz or SiC.

第2反應管120較佳係具有可將晶舟200安全地搬出入的最小限之內徑。The second reaction tube 120 preferably has the smallest inner diameter that can safely carry the wafer boat 200 in and out.

如圖1或圖9所示般，基板處理裝置101、或基板處理系統1係具有控制各部動作的控制器260。As shown in FIG. 1 or FIG. 9, the substrate processing apparatus 101 or the substrate processing system 1 includes a controller 260 that controls the operation of each part.

圖9表示控制器260之概略。屬於控制部(控制手段)之控制部260係構成為具備有CPU(Central Processing Unit，中央處理單元)260a、RAM(Random Access Memory，隨機存取記憶體)260b、記憶裝置260c、I/O埠260d的電腦。RAM260b、記憶裝置260c、I/O埠260d係構成為經由內部匯流排260e而可與CPU260a進行數據交換。於控制器260，構成為可連接例如構成為觸控面板等之輸出入裝置261、或外部記憶裝置262。FIG. 9 shows the outline of the controller 260. The control unit 260, which belongs to the control unit (control means), is configured with a CPU (Central Processing Unit) 260a, RAM (Random Access Memory) 260b, a memory device 260c, and I/O ports 260d computer. The RAM 260b, the memory device 260c, and the I/O port 260d are configured to exchange data with the CPU 260a via the internal bus 260e. The controller 260 is configured to be connectable to an input/output device 261 configured as a touch panel, or an external memory device 262, for example.

記憶裝置260c係例如由快閃記憶體、HDD(Hard Disk Drive，硬碟驅動器)等所構成。於記憶裝置260c內可讀出地儲存有記載了控制基板處理裝置之動作的控制程式、或後述基板處理之手續或條件等的製程配方等。尚且，製程配方係使組合成使控制器260執行後述基板處理步驟中之各手續、而可獲得既定結果者，具有作為程式之機能。以下，有時將此程式配方或控制程式等總稱為程式。尚且，本說明書中於使用「程式」之用語時，係指僅包含程式配方單體之情況、僅包含控制程式單體之情況、或包含此兩者的情況。又，RAM260b係構成為暫時保存由CPU260a所讀出之程式或數據等的記憶體區域(工作區)。The memory device 260c is composed of, for example, flash memory, HDD (Hard Disk Drive, hard disk drive), etc. In the memory device 260c, a control program for controlling the operation of the substrate processing apparatus, a process recipe or the like for the procedures or conditions of the substrate processing described later, etc. are readable and stored. Moreover, the process recipe is combined to enable the controller 260 to execute the procedures in the substrate processing steps described later to obtain a predetermined result, which has the function as a program. Hereinafter, sometimes this formula or control program is collectively referred to as a program. Moreover, when the term "program" is used in this manual, it refers to the case where only the formula formula monomer is included, the case where only the control program monomer is included, or the case where both are included. In addition, the RAM 260b is configured as a memory area (work area) that temporarily stores programs or data read by the CPU 260a.

I/O埠260d係連接於閘閥1330、1350、1490、升降機構部36、晶舟升降機40、加熱器100、加熱部321、壓力調整器(不圖示)、真空泵(不圖示)等。又，亦可連接於作為真空搬送機器人的移載機30、大氣搬送機器人1220、傳送室1300、氣體供給部(質量流量控制器MFC(不圖示)、閥(不圖示))等。又，本說明中所謂「連接」，亦包括各部藉物理性纜線連接的意義，但亦包括各部之信號(電子數據)可直接或間接進行傳送/接收的意義。例如，亦可於各部之間設置中繼信號的機材、轉換或演算信號的機材。The I/O port 260d is connected to the gate valves 1330, 1350, 1490, the lifting mechanism unit 36, the wafer boat elevator 40, the heater 100, the heating unit 321, a pressure regulator (not shown), a vacuum pump (not shown), and the like. In addition, it may be connected to the transfer machine 30 as a vacuum transfer robot, the atmospheric transfer robot 1220, the transfer chamber 1300, the gas supply unit (mass flow controller MFC (not shown), valves (not shown)), and the like. In addition, the term "connection" in this description also includes the meaning that each part is connected by a physical cable, but also includes the meaning that the signal (electronic data) of each part can be directly or indirectly transmitted/received. For example, a device for relaying signals, or a device for converting or calculating signals may be installed between each section.

CPU260a係構成為自記憶裝置260c讀出控制程式並執行，同時配合來自控制器260之操作指令之輸入等而自記憶裝置260c讀取製程配方。而且，CPU260a係構成為依照所讀取之製程配方之內容，控制閘閥1330、1350、332之開關動作、升降機構部36、晶舟升降機40之升降動作、旋轉驅動部42之旋轉動作、對加熱器100、加熱部321之電力供給動作、作為真空搬送機器人之移載機30、大氣搬送機器人1220。再者，亦進行氣體供給部(質量流量控制器MFC(不圖示)、閥(不圖示))之控制，但省略圖示。The CPU 260a is configured to read and execute the control program from the memory device 260c, and read the process recipe from the memory device 260c in conjunction with the input of operation instructions from the controller 260. In addition, the CPU 260a is configured to control the opening and closing actions of the gate valves 1330, 1350, and 332, the lifting mechanism 36, the lifting action of the wafer elevator 40, the rotation action of the rotary drive unit 42, and the heating The power supply operation of the heater 100, the heating unit 321, the transfer machine 30 as a vacuum transfer robot, and the atmospheric transfer robot 1220. In addition, the gas supply unit (mass flow controller MFC (not shown), valve (not shown)) is also controlled, but the illustration is omitted.

尚且，控制器260並不侷限於構成為專用電腦，亦可構成為通用電腦。例如，準備儲存了上述程式之外部記憶裝置(例如，磁帶、軟碟或硬碟等之磁碟、CD或DVD等之光碟、MO等之磁光碟、USB記憶體或記憶卡等之半導體記載體)262，使用此外部記憶裝置262將程式安裝至通用電腦等，藉此可構成本實施形態之控制器260。尚且，用於將程式供給至電腦的手段並不限於經由外部記憶裝置262進行供給之情形。例如亦可使用網際網路263(網路或專用線路)等之通訊手段，不經由外部記憶裝置262而供給程式。尚且，記憶裝置260c或外部記憶裝置262係構成為可由電腦讀取的記錄媒體。以下亦將此等總稱為記錄媒體。再者，於本說明書中使用記錄媒體之用語時，係指僅包含記憶裝置260c單體之情形、僅包含外部記憶裝置262單體之情形、或包含其兩者之情形。Furthermore, the controller 260 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, prepare an external memory device (such as magnetic tape, floppy disk or hard disk, etc., optical disk such as CD or DVD, etc.), magneto-optical disk such as MO, USB memory or semiconductor recording medium such as memory card ) 262, using the external memory device 262 to install the program to a general-purpose computer, etc., thereby forming the controller 260 of this embodiment. Furthermore, the means for supplying the program to the computer is not limited to the case of supplying via the external memory device 262. For example, communication means such as the Internet 263 (network or dedicated line) can also be used to provide programs without going through the external memory device 262. Furthermore, the storage device 260c or the external storage device 262 is configured as a recording medium readable by a computer. Hereinafter, these are also collectively referred to as recording media. Furthermore, when the term of the recording medium is used in this specification, it refers to the case that only includes the memory device 260c alone, the case that only includes the external memory device 262 alone, or the case of both.

(2)第1基板處理步驟 接著，作為使用上述基板處理裝置的半導體裝置製造步驟的一步驟，針對於基板上形成絕緣膜、例如作為含矽膜之矽氧化(SiO)膜的例子，參照圖2、圖3、圖10等進行說明。尚且，以下說明中，構成基板處理裝置101之各部的動作係藉由控制器260所控制。(2) The first substrate processing step Next, as one of the steps of manufacturing a semiconductor device using the above-mentioned substrate processing apparatus, for an example of forming an insulating film on a substrate, for example, a silicon oxide (SiO) film as a silicon-containing film, refer to FIGS. 2, 3, 10, etc. Be explained. In addition, in the following description, the operations of the components constituting the substrate processing apparatus 101 are controlled by the controller 260.

尚且，本說明書中於使用「基板」之用語的情況，亦與使用「晶圓」一詞的情況相同，此時，於上述說明中將「基板」置換為「晶圓」即可。Furthermore, the use of the term "substrate" in this manual is the same as the use of the term "wafer". In this case, just replace "substrate" with "wafer" in the above description.

以下，作為半導體裝置製造步驟的一步驟，表示包括於基板10進行成膜之成膜步驟S204的一連串基板處理步驟的流程例。Hereinafter, as one step of the semiconductor device manufacturing step, a flow example of a series of substrate processing steps including the film formation step S204 of film formation on the substrate 10 is shown.

[事前環境調整步驟：S200] 首先，藉由加熱器100，將處理室115內、或晶舟200加熱至成膜步驟S204的既定溫度。此時，依晶舟200配置於圖2所示之處理位置的狀態進行。到達既定溫度後，藉由未圖示之真空泵使處理室115之內部由排氣管140進行真空排氣成為所需壓力(真空度)。又，由加熱器100進行之處理室115內的加熱、或處理室115內的排氣，係至少於對基板10之處理完成為止的期間持續進行。[Pre-environment adjustment steps: S200] First, the heater 100 heats the inside of the processing chamber 115 or the wafer boat 200 to a predetermined temperature in the film forming step S204. At this time, it is performed in a state where the wafer boat 200 is arranged at the processing position shown in FIG. 2. After reaching the predetermined temperature, the inside of the processing chamber 115 is evacuated to the required pressure (vacuum degree) by the exhaust pipe 140 by a vacuum pump (not shown). In addition, the heating of the processing chamber 115 by the heater 100 or the exhaust of the processing chamber 115 is continued at least until the processing of the substrate 10 is completed.

又，亦可將加熱部321設為ON，進行預備加熱使加熱室320內成為既定溫度。In addition, the heating unit 321 may be turned on to perform preliminary heating so that the inside of the heating chamber 320 becomes a predetermined temperature.

[基板搬入步驟：S201] 接著，進行基板搬入步驟S201。基板搬入步驟係至少進行基板載置步驟S201a與第1基板加熱步驟S201b。[Board loading step: S201] Next, the board carrying-in step S201 is performed. The substrate carrying step is to perform at least the substrate mounting step S201a and the first substrate heating step S201b.

[基板載置步驟：S201a、第1基板加熱步驟：S201b] 於此，基板載置步驟S201a與第1基板加熱步驟S201b並行進行。[Substrate placement step: S201a, first substrate heating step: S201b] Here, the substrate placing step S201a is performed in parallel with the first substrate heating step S201b.

[基板載置步驟：S201a] 首先，說明基板載置步驟S201a。進行於晶舟200載置基板10，將載置了基板10之晶舟200配置於處理室的步驟。具體而言，由圖2之狀態，成為使設於晶舟200之最下側的基板支撐部203插入至移載室330內的狀態。亦稱為將1節(一個之基板載置的基板支撐部203)插入至移載室330內的狀態。此時，晶舟200之大部分係與加熱器100相對向，成為被加熱的狀態。於此狀態下，經由移載室330之基板搬入口331，由移載機30將基板10載置於晶舟200之基板支撐部203。一邊使晶舟200之基板支撐部203下降1節分(晶舟下降)，一邊重複進行此步驟，而於晶舟200之所有段之基板支撐部203上載置基板10。又，此動作係藉由晶舟升降機40使支撐桿160移動而進行。[Substrate placement step: S201a] First, the substrate mounting step S201a will be described. A step of placing the substrate 10 on the wafer boat 200 and placing the wafer boat 200 on which the substrate 10 is placed in a processing chamber is performed. Specifically, from the state of FIG. 2, the substrate support portion 203 provided on the lowermost side of the wafer boat 200 is inserted into the transfer chamber 330. It is also referred to as a state in which one section (the substrate supporting portion 203 on which one substrate is placed) is inserted into the transfer chamber 330. At this time, most of the wafer boat 200 faces the heater 100 and is in a heated state. In this state, the substrate 10 is placed on the substrate support portion 203 of the wafer boat 200 by the transfer machine 30 through the substrate transfer port 331 of the transfer chamber 330. This step is repeated while lowering the substrate support portion 203 of the wafer boat 200 by one section (wafer boat lowering), and the substrate 10 is placed on the substrate support portions 203 of all stages of the wafer boat 200. Moreover, this action is performed by the wafer boat elevator 40 moving the support rod 160.

[第1基板加熱步驟：S201b] 接著，針對第1基板加熱步驟S201b，使用圖3進行說明。第1基板加熱步驟S201b係由在上述基板載置步驟S201a中、載置於晶舟200的基板10依序進行。如圖3所示，由下方起第1節所載置之基板10，係至少藉由經加熱之晶舟200所加熱。如此，將基板10被加熱的步驟稱為第1基板加熱步驟S201b。又，此時，為了提升載置於晶舟200之基板10的升溫速度，構成為事先將加熱部321設為ON狀態，藉由加熱部321，對基板10進行加熱。第1基板加熱步驟S201b係持續到於晶舟200之所有段之基板支撐部203上載置基板10為止。於此步驟中，基板10係加熱至例如200~450℃左右範圍的溫度帶。[First substrate heating step: S201b] Next, the first substrate heating step S201b will be described using FIG. 3. The first substrate heating step S201b is sequentially performed by the substrate 10 placed on the wafer boat 200 in the above-mentioned substrate placing step S201a. As shown in FIG. 3, the substrate 10 placed in the first section from below is heated by at least the heated wafer boat 200. In this manner, the step in which the substrate 10 is heated is referred to as a first substrate heating step S201b. In addition, at this time, in order to increase the temperature increase rate of the substrate 10 placed on the wafer boat 200, the heating unit 321 is set to the ON state in advance, and the substrate 10 is heated by the heating unit 321. The first substrate heating step S201b is continued until the substrate 10 is placed on the substrate supporting portion 203 of all stages of the wafer boat 200. In this step, the substrate 10 is heated to a temperature range of, for example, about 200 to 450°C.

接著，依於晶舟200之所有段之基板支撐部203上載置了基板10的狀態，藉晶舟升降機40使支撐桿160上升，將晶舟200搬入至第2反應管120之內部(晶舟裝載)(圖2所示狀態)。Next, depending on the state where the substrate 10 is placed on the substrate support portion 203 of all the stages of the wafer boat 200, the support rod 160 is raised by the wafer boat elevator 40, and the wafer boat 200 is moved into the inside of the second reaction tube 120 (wafer boat 200). Loading) (state shown in Figure 2).

尚且，於晶舟裝載時，處理室115之下側之溫度有過度(over shoot)之情況。此時，亦可將加熱器100構成為具有於上下方向經分割之區塊的區塊加熱器，將下部區塊之加熱器的輸出減小於其他區塊之加熱器的輸出。Moreover, when the wafer boat is loaded, the temperature on the lower side of the processing chamber 115 may be overshooted. At this time, the heater 100 may be configured as a block heater having blocks divided in the vertical direction, and the output of the heater of the lower block can be reduced from the output of the heaters of other blocks.

又，於基板替換步驟S206a中，晶舟200之旋轉成為停止狀態。由於晶舟200之旋轉停止，故於晶舟200之旋轉方向(基板10之周方向)上，有時於基板10或晶舟200之旋轉方向(周方向)上形成溫度差(溫度分佈)。例如，有面向基板搬入口331之部分的溫度較其他部分之溫度降低的情形。為了解除此溫度差，較佳係在晶舟200之最上部之基板支撐部203載置了新基板10後，使晶舟200旋轉。In addition, in the substrate replacement step S206a, the rotation of the wafer boat 200 is stopped. Since the rotation of the wafer boat 200 stops, in the rotation direction of the wafer boat 200 (the circumferential direction of the substrate 10), sometimes a temperature difference (temperature distribution) is formed in the rotation direction of the substrate 10 or the wafer boat 200 (circumferential direction). For example, the temperature of the part facing the substrate import port 331 may be lower than the temperature of other parts. In order to relieve this temperature difference, it is preferable to rotate the wafer boat 200 after placing the new substrate 10 on the substrate supporting portion 203 at the uppermost part of the wafer boat 200.

[第2基板加熱步驟：S202] 尚且，在使晶舟200上升前，亦可如圖10之虛線所示般，進行第2基板加熱步驟S202。此步驟係例如於基板10之升溫較慢的情況下進行。於第2基板加熱步驟S202，依圖4所示狀態，使其待機既定時間，將基板10加熱至既定溫度為止的步驟。例如，基板10係加熱至200~450℃左右之範圍的溫度帶。[Second substrate heating step: S202] Furthermore, before raising the wafer boat 200, the second substrate heating step S202 may be performed as shown by the broken line in FIG. 10. This step is performed when the temperature of the substrate 10 is slow, for example. In the second substrate heating step S202, in the state shown in FIG. 4, it is a step of making it stand by for a predetermined time and heating the substrate 10 to a predetermined temperature. For example, the substrate 10 is heated to a temperature range of approximately 200 to 450°C.

[成膜步驟：S203] 接著，由未圖示之氣體供給系統經由噴嘴130將原料氣體供給至第2反應管120內部，並通過第2反應管120與第1反應管110間之上側的間隙121及下側的開口部122，由排氣管140藉由未圖示之排氣泵進行排氣至外部。[Film forming step: S203] Next, the raw material gas is supplied to the inside of the second reaction tube 120 through the nozzle 130 by a gas supply system not shown, and passes through the upper gap 121 and the lower opening between the second reaction tube 120 and the first reaction tube 110 122. Exhaust to the outside through the exhaust pipe 140 by an exhaust pump (not shown).

藉由重複進行包括經由此噴嘴130對第2反應管120之內部供給原料氣體、藉排氣泵進行排氣至外部之步驟的數個處理步驟，於搭載在晶舟200上之基板10之表面形成所需厚度的薄膜。例如，供給胺基矽烷系氣體或含氧氣體。作為胺基矽烷系氣體，例如雙二乙基胺基矽烷(H2 Si(NEt2 )2 ，Bis(diethylamino)silane：BDEAS)氣體。作為含氧氣體，有如氧氣(O2 )或臭氧氣體(O3 )、水(H2 O)、一氧化二氮氣體(N2 O)等。By repeating several processing steps including the steps of supplying raw material gas to the inside of the second reaction tube 120 through the nozzle 130 and exhausting to the outside by an exhaust pump, the surface of the substrate 10 mounted on the wafer boat 200 Form a thin film of the desired thickness. For example, supply of aminosilane-based gas or oxygen-containing gas. As the aminosilane-based gas, for example, bisdiethylaminosilane (H 2 Si(NEt 2 ) 2 , Bis (diethylamino)silane: BDEAS) gas. As the oxygen-containing gas, there are oxygen (O 2 ) or ozone gas (O 3 ), water (H 2 O), nitrous oxide gas (N 2 O), and the like.

[環境調整步驟：S204] 於基板10之表面形成了所需厚度之薄膜後，進行環境調整步驟S204。由未圖示之氣體供給系統經由噴嘴130對第2反應管120內部供給N2 氣體，由排氣管140藉由未圖示之排氣泵進行排氣至外部，藉此將處理室115內藉惰性氣體進行沖洗，將殘留於處理室115內之氣體或副產物由處理室115內去除。[Environmental adjustment step: S204] After a thin film with a desired thickness is formed on the surface of the substrate 10, an environment adjustment step S204 is performed. N 2 gas is supplied to the inside of the second reaction tube 120 via a nozzle 130 from a gas supply system not shown, and the exhaust pipe 140 is exhausted to the outside by an exhaust pump not shown, thereby removing the inside of the processing chamber 115 The inert gas is used for flushing, and the gas or by-products remaining in the processing chamber 115 are removed from the processing chamber 115.

[判定步驟：S205] 接著，對未進行上述成膜步驟S203之新基板10，進行是否重複進行的判定步驟S205。在為未處理之基板10時，判定為YES(Y)，進行基板替換步驟S206a與第1加熱步驟S206b。在無未處理之基板10的情況，判定為No(N)，進行基板搬出步驟S207。[Decision Step: S205] Next, for the new substrate 10 on which the above-mentioned film forming step S203 has not been performed, a step S205 of determining whether or not to be repeated is performed. When it is an unprocessed substrate 10, the determination is YES (Y), and the substrate replacement step S206a and the first heating step S206b are performed. When there is no unprocessed substrate 10, it is determined as No (N), and the substrate unloading step S207 is performed.

[基板替換步驟：S206a] 其後，驅動晶舟升降機40使支撐桿160下降，如圖3所示，將搭載了於表面形成了既定厚度薄膜之基板10的晶舟200搬送至收納室300。[Substrate replacement step: S206a] After that, the wafer boat elevator 40 is driven to lower the support rod 160, and as shown in FIG. 3, the wafer boat 200 on which the substrate 10 with a thin film of a predetermined thickness is formed on the surface is transferred to the storage chamber 300.

在將此搭載了形成有薄膜之基板(處理完畢基板)10的晶舟200搬送至腔室180時，本實施例中，係驅動晶舟升降機40使晶舟200進行節距移送，依每次一片經由移載室330之基板搬入口331、由晶舟200取出形成了薄膜的基板10，再將新基板(未處理基板)10搭載於晶舟200。When the wafer boat 200 on which the thin film-formed substrate (processed substrate) 10 is mounted is transferred to the chamber 180, in this embodiment, the wafer boat elevator 40 is driven to make the wafer boat 200 perform pitch transfer. A substrate 10 on which a thin film has been formed is taken out from the wafer boat 200 through the substrate transfer port 331 of the transfer chamber 330, and then a new substrate (unprocessed substrate) 10 is placed on the wafer boat 200.

基板10之替換順序，係有由上起依序、由下起依序、由晶舟200之中間附近起依序等各種，但由晶舟200之下方起依序替換者，可縮短基板10之升溫時間。其中，搭載於晶舟200之最上方與最下方的基板10，有溫度較搭載於晶舟200中間附近之基板10高的傾向，故亦可由晶舟200中間附近起依序開始替換。The order of replacement of the substrate 10 is from top to bottom, from bottom to bottom, from near the middle of the wafer boat 200, etc., but the replacement order from the bottom of the wafer boat 200 can shorten the substrate 10 The heating time. Among them, the substrate 10 mounted on the top and bottom of the wafer boat 200 tends to have a higher temperature than the substrate 10 mounted near the middle of the wafer boat 200, so replacement may be started from the middle of the wafer boat 200 in order.

實行此動作直到搭載於晶舟200之形成了薄膜的基板10全部替換為新基板10為止。此時，為了提升新基板10之升溫速度，亦可使收納室300之加熱部321先發熱，經由窗310對加熱室320內部藉由紅外線進行加熱。藉此，在晶舟200之下端進行至移載室330、開始替換基板的期間，對晶舟200之下部藉由安裝於加熱室320外周部的加熱部321進行加熱，抑制晶舟200的溫度降低。This action is performed until all the thin-film-formed substrates 10 mounted on the wafer boat 200 are replaced with new substrates 10. At this time, in order to increase the heating rate of the new substrate 10, the heating part 321 of the storage chamber 300 may be heated first, and the inside of the heating chamber 320 may be heated by infrared rays through the window 310. As a result, during the period from the lower end of the wafer boat 200 to the transfer chamber 330 and the start of substrate replacement, the lower part of the wafer boat 200 is heated by the heating part 321 installed on the outer periphery of the heating chamber 320 to suppress the temperature of the wafer boat 200 reduce.

如此，藉由以加熱部321對加熱室320內部進行加熱，如圖4所示，在將搭載於晶舟200之形成了薄膜之基板10全部替換為新基板10的時點，晶舟200、與重新搭載於此晶舟200之基板10係於加熱室320之內部被加熱，溫度上升。In this way, by heating the inside of the heating chamber 320 by the heating part 321, as shown in FIG. 4, when the substrate 10 with the thin film formed on the wafer boat 200 is replaced with a new substrate 10, the wafer boat 200, and The substrate 10 remounted on the wafer boat 200 is heated inside the heating chamber 320, and the temperature rises.

當搭載於晶舟200之形成了薄膜的基板10全部替換為新基板10時，驅動晶舟升降機40使晶舟200上升，將晶舟200由收納室300搬入至第2反應管120(圖2所示狀態)。When all the thin-film-formed substrates 10 mounted on the wafer boat 200 are replaced with new substrates 10, the wafer boat elevator 40 is driven to raise the wafer boat 200, and the wafer boat 200 is transferred from the storage chamber 300 to the second reaction tube 120 (FIG. 2 State shown).

於此狀態下，收納室300與處理室115之內部係藉由未圖示之真空泵由排氣管140進行真空排氣，晶舟係依真空狀態由收納室300搬入至處理室115。藉此，由收納室300將晶舟200搬入至處理室115後不再需要將處理室進行真空排氣的時間，可縮短全體之處理時間。In this state, the interiors of the storage chamber 300 and the processing chamber 115 are evacuated from the exhaust pipe 140 by a vacuum pump not shown, and the wafer boat is carried in from the storage chamber 300 to the processing chamber 115 in a vacuum state. Thereby, after the wafer boat 200 is carried into the processing chamber 115 from the storage chamber 300, the time for vacuuming the processing chamber is no longer required, and the overall processing time can be shortened.

如此，藉由依真空狀態進行由收納室300對處理室115的晶舟200搬入，可抑制處理室115之溫度降低。又，在使加熱後之基板10由加熱室320移動至處理室115為止的期間可抑制基板10之溫度降低。In this way, by carrying in the wafer boat 200 of the processing chamber 115 from the storage chamber 300 in a vacuum state, the temperature of the processing chamber 115 can be suppressed from decreasing. In addition, it is possible to prevent the temperature of the substrate 10 from lowering during the period when the heated substrate 10 is moved from the heating chamber 320 to the processing chamber 115.

搬入晶舟200後，藉加熱器100進行加熱使基板10成為所需溫度。此時，由於晶舟200與基板10已於移載室330中經加熱，故其上升至開始成膜處理之所需溫度為止的時間可較未於移載室330加熱而依室溫狀態搬入至處理室115內部的情況大幅縮短。藉此，可縮短基板處理時間，提升產率。After the wafer boat 200 is loaded, the heater 100 is used to heat the substrate 10 to a desired temperature. At this time, since the wafer boat 200 and the substrate 10 have been heated in the transfer chamber 330, the time required for them to rise to the temperature required to start the film formation process can be moved in at room temperature compared to the time they are not heated in the transfer chamber 330. The situation to the inside of the processing chamber 115 is greatly shortened. Thereby, the substrate processing time can be shortened and the yield can be improved.

於此，由於由例如晶舟200之最下段起依序進行對晶舟200的新基板10替換，故新替換入之基板10於加熱室320內部的滯留時間相異，在晶舟200之最下段所搭載的基板10與晶舟200之最上段所搭載之基板10間發生溫度差。Here, since the replacement of the new substrate 10 of the wafer boat 200 is carried out in sequence from the bottom of the wafer boat 200, the residence time of the newly replaced substrate 10 inside the heating chamber 320 is different. There is a temperature difference between the substrate 10 mounted on the lower stage and the substrate 10 mounted on the uppermost stage of the wafer boat 200.

尚且，於上述實施例，例示了驅動晶舟升降機40將晶舟200進行節距移送，由晶舟200取出形成了薄膜的基板10，並將1片新基板10搭載於晶舟200的例，但亦可將複數片基板10同時由晶舟200取出，將複數片之新基板10同時搭載於晶舟200。此時，晶舟升降機40係使晶舟200依複數片基板10之分量進行節距移送。Furthermore, in the above-mentioned embodiment, an example was exemplified in which the wafer boat lift 40 was driven to move the wafer boat 200 in pitch, the substrate 10 on which the thin film was formed was taken out from the wafer boat 200, and a new substrate 10 was mounted on the wafer boat 200. However, it is also possible to take out a plurality of substrates 10 from the wafer boat 200 at the same time, and load a plurality of new substrates 10 on the wafer boat 200 at the same time. At this time, the wafer boat elevator 40 causes the wafer boat 200 to perform pitch transfer according to the components of the plurality of substrates 10.

又，亦可將複數片基板10同時由晶舟200取出，將複數片新基板10同時搭載於晶舟200，將重新搭載於晶舟200之處理前之基板10全部一概進行加熱。In addition, a plurality of substrates 10 may be taken out from the wafer boat 200 at the same time, a plurality of new substrates 10 may be loaded on the wafer boat 200 at the same time, and all the substrates 10 before being reloaded on the wafer boat 200 may be heated.

尚且，在藉由晶舟升降機40使晶舟200下降，將搭載於晶舟200之形成了薄膜之基板10替換為基板10時，亦可持續由基板處理裝置101之加熱器100進行加熱。藉此，可防止晶舟200之上部溫度之降低，因替換了新基板10後晶舟200之上部之基板10於加熱室320內的加熱時間短，而可某程度地消除與晶舟200之下部之基板10間的溫度差。Furthermore, when the wafer boat 200 is lowered by the wafer boat elevator 40 and the thin-film-formed substrate 10 mounted on the wafer boat 200 is replaced with the substrate 10, heating by the heater 100 of the substrate processing apparatus 101 can also be continued. Thereby, the temperature of the upper part of the wafer boat 200 can be prevented from lowering. After the new substrate 10 is replaced, the heating time of the substrate 10 on the upper part of the wafer boat 200 in the heating chamber 320 is short, which can eliminate the contact with the wafer boat 200 to a certain extent. The temperature difference between the lower substrate 10.

尚且，於基板替換步驟S206a，亦可構成為持續蓋加熱器152之ON，而進行晶舟下降、晶舟裝載。藉由使蓋加熱器152持續ON，可抑制隔熱部150、或晶舟200之下部之基板支撐部203的溫度降低。Furthermore, in the substrate replacement step S206a, the cover heater 152 may be continuously turned on, and the wafer boat is lowered and loaded. By continuously turning on the lid heater 152, it is possible to suppress a decrease in the temperature of the thermal insulation portion 150 or the substrate support portion 203 under the wafer boat 200.

[基板搬出步驟：S207] 基板搬出步驟S207係在無新基板10的情況進行。基板搬出步驟S207之動作係構成為於基板替換步驟S206a中不載置新基板10。 如此，進行本實施例之基板處理步驟。[Board out step: S207] The substrate unloading step S207 is performed when there is no new substrate 10. The operation of the substrate unloading step S207 is configured such that the new substrate 10 is not placed in the substrate replacement step S206a. In this way, the substrate processing steps of this embodiment are performed.

根據本實施例，相較於未於加熱室320加熱基板10的情況，藉由於加熱室320加熱基板10，可縮短由移載室330搬入至處理室115之晶舟200所搭載的基板10的加熱時間，可提升處理產率。According to this embodiment, compared to the case where the substrate 10 is not heated in the heating chamber 320, the heating chamber 320 heats the substrate 10, so that the substrate 10 loaded on the wafer boat 200 that is transferred from the transfer chamber 330 to the processing chamber 115 can be shortened. Heating time can increase the processing yield.

[變形例1] 實施例1中，例示了使作為加熱部321之複數之燈加熱器於加熱室320之長度方向上齊合而配列的例子，但本變形例中，如圖5所示，構成為使環狀之燈加熱器322沿著加熱室320之外周、於加熱室320之長度方向上複數配置。對於與實施例1相同之構成零件加註相同符號，並省略重複說明。[Modification 1] In the first embodiment, an example in which a plurality of lamp heaters as the heating portion 321 are aligned and arranged in the longitudinal direction of the heating chamber 320 is illustrated. However, in this modification example, as shown in FIG. The lamp heaters 322 are arranged in plural along the outer circumference of the heating chamber 320 in the longitudinal direction of the heating chamber 320. The same symbols are added to the same constituent parts as in the first embodiment, and repeated description is omitted.

此時，配置環狀之燈加熱器322的位置，係配合於加熱室320內部中搭載於晶舟200之基板10之高度方向上的節距，對搭載於晶舟200之每1片基板10進行配置。此時，環狀之燈加熱器322的位置，係配置於較對應之基板10之位置(晶舟200之載置面)更上側。At this time, the position where the ring-shaped lamp heater 322 is arranged is matched to the pitch in the height direction of the substrate 10 mounted on the wafer boat 200 in the heating chamber 320, for each substrate 10 mounted on the wafer boat 200 Configure it. At this time, the position of the ring-shaped lamp heater 322 is arranged above the position of the corresponding substrate 10 (the placement surface of the wafer boat 200).

尚且，亦可取代環狀之燈加熱器322，使棒狀之燈加熱器沿著加熱室320之外周配置複數根。Furthermore, instead of the ring-shaped lamp heater 322, a plurality of rod-shaped lamp heaters can be arranged along the outer circumference of the heating chamber 320.

再者，亦可使沿著加熱室320外周、於加熱室320之長度方向上複數配置之環狀之燈加熱器322的輸出，沿著加熱室320之長度方向改變。Furthermore, the output of a plurality of ring-shaped lamp heaters 322 arranged in the length direction of the heating chamber 320 along the outer circumference of the heating chamber 320 may be changed along the length direction of the heating chamber 320.

本變形例中，亦可獲得與實施例1相同的效果。 [變形例2] 作為第2變形例，如圖6所示，構成為將加熱室320分為複數區塊，使對各區域進行加熱的溫度不同。於圖6所示例子中，例示了將加熱室320分為3個區塊323-1、323-2、323-3的例子。In this modification example, the same effect as in Example 1 can also be obtained. [Modification 2] As a second modification, as shown in FIG. 6, the heating chamber 320 is divided into a plurality of blocks, and the temperature at which each zone is heated is different. In the example shown in FIG. 6, an example in which the heating chamber 320 is divided into three blocks 323-1, 323-2, and 323-3 is illustrated.

如此，將加熱室320分為複數區塊，並將上部之區塊323-1之溫度設定為高於下部之區塊323-3之溫度，藉此可減低因在加熱室320內部之滯留時間之差所造成的搭載於晶舟200最上段之基板10與搭載於最下段之基板10間的溫度。In this way, the heating chamber 320 is divided into a plurality of blocks, and the temperature of the upper block 323-1 is set to be higher than the temperature of the lower block 323-3, thereby reducing the residence time in the heating chamber 320 The temperature between the substrate 10 mounted on the uppermost stage of the wafer boat 200 and the substrate 10 mounted on the lowermost stage caused by the difference.

根據本變形例，可減小搭載於晶舟200之基板10之上下間的溫度差，故相較於實施例1之情況，可使由移載室330被搬入至處理室115之晶舟200所搭載的基板10的加熱時間更加縮短，可提升處理產率。According to this modification, the temperature difference between the top and bottom of the substrate 10 mounted on the wafer boat 200 can be reduced. Therefore, compared with the case of the first embodiment, the wafer boat 200 can be moved from the transfer chamber 330 to the processing chamber 115. The heating time of the mounted substrate 10 is further shortened, and the processing yield can be improved.

[變形例3] 作為第3變形例，有如圖8所示構成。圖8係使腔室180之高度較其他圖之構成減短的構成。具體而言，構成為在使晶舟200移動至收納室300之下端時，晶舟200之最上部之基板支撐部203面向基板搬入口331。藉由如此構成，可縮短晶舟200之上下方向之行程長度，可縮短晶舟200(基板10)之搬送時間。[Modification 3] As a third modification, there is a configuration as shown in FIG. 8. Fig. 8 is a configuration in which the height of the chamber 180 is reduced compared to the configurations in other figures. Specifically, when the wafer boat 200 is moved to the lower end of the storage chamber 300, the uppermost substrate support portion 203 of the wafer boat 200 faces the substrate import port 331. With this configuration, the stroke length in the upper and lower directions of the wafer boat 200 can be shortened, and the transport time of the wafer boat 200 (substrate 10) can be shortened.

又，使腔室180之下端起至加熱器100為止的距離構成為較短，可使來自加熱器100之輻射熱容易到達晶舟200，使晶舟200之上端之圓板201被加熱。又，處理室115之下側開口(反應管與腔室180之間)更容易被晶舟200之上端之圓板201閉塞，可抑制處理室115內的溫度降低。又，此構成亦可謂使加熱室320之垂直方向之高度構成為包含隔熱部150與晶舟200之基板載置區域之一部分的長度。In addition, the distance from the lower end of the chamber 180 to the heater 100 is configured to be short, so that the radiant heat from the heater 100 can easily reach the wafer boat 200 and the disc 201 at the upper end of the wafer boat 200 is heated. In addition, the opening on the lower side of the processing chamber 115 (between the reaction tube and the chamber 180) is more likely to be blocked by the circular plate 201 at the upper end of the wafer boat 200, which can suppress the temperature drop in the processing chamber 115. In addition, this structure can also be said that the height of the heating chamber 320 in the vertical direction is configured to include the length of a part of the substrate mounting area of the heat insulation portion 150 and the wafer boat 200.

以上根據實施例具體說明了本發明，但本發明並不限定於上述實施例，當然在不脫離其要旨之範圍內可進行各種變更。例如，上述實施例係為了容易理解本發明而詳細說明者，但並不限定於必須具備上述說明之所有構成者。又，對於各實施例之構成的一部分，亦可進行其他構成的追加、刪除、取代。The present invention has been specifically explained based on the embodiments above, but the present invention is not limited to the above-mentioned embodiments, and of course various modifications can be made without departing from the scope of the gist. For example, the above-mentioned embodiments are explained in detail in order to facilitate the understanding of the present invention, but they are not limited to those which must have all the configurations explained above. In addition, for a part of the configuration of each embodiment, other configurations may be added, deleted, or replaced.

例如，例示了將加熱部321於圖2中設於收納室300之兩側方的例子，但並不限定於此構成，亦可構成為僅設於一側方。又，亦可構成為包圍收納室300之壁。For example, an example in which the heating unit 321 is provided on both sides of the storage chamber 300 in FIG. 2 is illustrated, but it is not limited to this structure, and it may be configured to be provided only on one side. In addition, it may be configured as a wall surrounding the storage chamber 300.

再者，本案發明人等經潛心研究，結果發現，藉由如圖11所示般構成基板處理裝置101，可提升基板10之升溫速度。圖11所示基板處理裝置101、與圖2所示基板處理裝置101的差異，在於圖11中設有第2加熱部324。第2加熱部324係設於加熱部321(亦為第1加熱部321)上方。較佳係使第2加熱部324設於移載室330、並與基板搬入口331相對向。更佳係將第2加熱部324設置於：在設於晶舟200之基板支撐部203中、於最上部之基板支撐部203載置了基板10時，可對最上部之基板10進行加熱的位置。Furthermore, the inventors of the present application have conducted painstaking research and found that by configuring the substrate processing apparatus 101 as shown in FIG. 11, the heating rate of the substrate 10 can be increased. The difference between the substrate processing apparatus 101 shown in FIG. 11 and the substrate processing apparatus 101 shown in FIG. 2 is that a second heating unit 324 is provided in FIG. 11. The second heating part 324 is provided above the heating part 321 (also the first heating part 321). Preferably, the second heating part 324 is provided in the transfer chamber 330 and is opposed to the substrate transfer port 331. More preferably, the second heating portion 324 is provided in the substrate support portion 203 provided in the wafer boat 200, and when the substrate 10 is placed on the uppermost substrate support portion 203, the uppermost substrate 10 can be heated position.

針對使用了第2加熱部324之加熱處理進行說明。一邊藉第1加熱部321進行加熱、一邊將進行處理之基板10載置於晶舟200，使進行處理之基板10全部載置於晶舟200後，將第2加熱部324設為ON。藉由使第2加熱部324作動(設為ON)，提升最後載置於晶舟200之基板10的升溫速度。第2加熱部324亦可構成為至少在晶舟200之下端通過為止持續ON狀態、而亦可進行晶舟200之加熱。The heat treatment using the second heating unit 324 will be described. The substrate 10 to be processed is placed on the wafer boat 200 while being heated by the first heating section 321, and after all the substrates 10 to be processed are placed on the wafer boat 200, the second heating section 324 is turned on. By activating (turning on) the second heating unit 324, the temperature increase rate of the substrate 10 finally placed on the wafer boat 200 is increased. The second heating part 324 may be configured to continue to be in an ON state until the lower end of the wafer boat 200 passes at least, and may also heat the wafer boat 200.

藉由如此構成，對於載置於最上部之基板支撐部203的未處理之基板10，可於載置於基板支撐部203後立即開始加熱。載置於晶舟200之基板10全體的加熱時間，係由最後載置於基板支撐部203之最上部之基板10的溫度上升所決定，故藉由對最上部之基板10以第2加熱部324進行加熱，則可於載置於基板支撐部203後立即開始加熱，故可縮短載置於晶舟200之基板10全體的加熱時間。亦即，基板10之處理時間變短，可提升半導體裝置之製造產率。With this configuration, the unprocessed substrate 10 placed on the uppermost substrate supporting portion 203 can be heated immediately after being placed on the substrate supporting portion 203. The heating time of the entire substrate 10 placed on the wafer boat 200 is determined by the temperature rise of the last substrate 10 placed on the uppermost part of the substrate support part 203. Therefore, by applying the second heating part to the uppermost substrate 10 Heating at 324 can start heating immediately after being placed on the substrate supporting portion 203, so that the heating time of the entire substrate 10 placed on the wafer boat 200 can be shortened. That is, the processing time of the substrate 10 is shortened, and the manufacturing yield of semiconductor devices can be improved.

又，將未處理之基板10載置於最上部之基板支撐部203後，藉由將第2加熱部324設為ON，可抑制基板搬入口331、閘閥332、設於閘閥332周圍之O型環等至少任一者的加熱。In addition, after placing the unprocessed substrate 10 on the uppermost substrate support portion 203, by turning on the second heating portion 324, the substrate carrying port 331, the gate valve 332, and the O-shaped set around the gate valve 332 can be suppressed. Heating of at least any one of the ring etc.

尚且，於此例示了由個別之發熱體構成第1加熱部321、第2加熱部324的例子，但並不限定於此構成，亦可構成為由同一發熱體構成第1加熱部321與第2加熱部324。換言之，構成為使第1加熱部321之上端側延伸存在於移載室330側。於此，所謂發熱體係指燈加熱器、或電阻加熱器等。Furthermore, an example in which the first heating section 321 and the second heating section 324 are composed of separate heating elements is illustrated here, but the structure is not limited to this configuration, and the same heating element may be used to form the first heating section 321 and the second heating section. 2 Heating part 324. In other words, it is configured such that the upper end side of the first heating portion 321 extends on the transfer chamber 330 side. Here, the so-called heating system refers to lamp heaters, resistance heaters, and the like.

本發明係至少包括以下實施形態。 [附記1]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；且於基板支撐具設有隔件。 [附記2]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；上述移載室之相對於上述基板之面垂直方向的長度，係構成為較上述加熱室之相對於上述基板之面垂直方向的長度短。 [附記3]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；上述加熱室之相對於上述基板之面垂直方向的長度，係構成為上述基板支撐具之上述基板載置區域之長度。 [附記4]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；並具有控制部，其係構成為控制加熱室之加熱部、與晶舟升降機構，而將晶舟下降、及處理後之複數基板與處理前之複數基板的替換並行進行，並將經載置之處理前的基板依序於加熱室進行加熱。 [附記5]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；並具有控制部，其係構成為控制加熱室之加熱部、與晶舟升降機構，而將晶舟下降、及處理後之複數基板與處理前之複數基板的替換並行進行，並將經載置之處理前的基板一概進行加熱。 [附記6]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；其持續上述加熱室所進行之加熱並進行晶舟下降、晶舟裝置。 [附記7]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；其持續上述處理室側之加熱器所進行之加熱並進行晶舟下降、晶舟裝置。 [附記8]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；移載室、加熱室、反應室係連通，構成為真空環境。 [附記9]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；在預備加熱之前(晶舟之卸載前)將燈設為ON，對加熱室進行加熱。 [附記10]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；於加熱室設置SiC構件而將加熱室構成為熱壁般。 [附記11]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；於晶舟卸載時，切換反應室下部之加熱器的控制。 [附記12]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；於晶舟卸載時，控制反應室下部之加熱器，使反應室下部之加熱器的電力固定或減少。 [附記13]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；在複數片之基板的替換結束後，開始晶舟旋轉。 [附記14]一種基板處理裝置，其具有：對基板進行處理之處理室；連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室；為了抑制示教(teaching)偏差，加熱室係進行冷卻。The present invention includes at least the following embodiments. [Supplementary Note 1] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; and a spacer is provided on the substrate support. [Supplementary Note 2] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; the length of the transfer chamber in the vertical direction relative to the surface of the substrate is configured to be longer than the surface of the heating chamber relative to the substrate The vertical length is short. [Supplementary Note 3] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; the length of the heating chamber in the direction perpendicular to the surface of the substrate is the length of the substrate placement area of the substrate support . [Supplementary Note 4] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber that heats the substrate support and the substrate; and has a control part, which is configured to control the heating part of the heating chamber, and the wafer boat lifting mechanism to lower the wafer boat and process The replacement of the latter plural substrates and the plural substrates before processing are performed in parallel, and the placed and processed substrates are sequentially heated in the heating chamber. [Supplementary Note 5] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber that heats the substrate support and the substrate; and has a control part, which is configured to control the heating part of the heating chamber, and the wafer boat lifting mechanism to lower the wafer boat and process The replacement of the subsequent plural substrates and the plural substrates before processing are performed in parallel, and all the placed substrates before processing are heated. [Additional Note 6] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; it continues the heating by the heating chamber and performs the lowering of the wafer boat and the wafer boat device. [Supplementary Note 7] A substrate processing apparatus comprising: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; it continues the heating by the heater on the side of the processing chamber and performs the lowering of the wafer boat and the wafer boat device. [Supplement 8] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; the transfer chamber, the heating chamber, and the reaction chamber are connected to each other and constitute a vacuum environment. [Additional Note 9] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; before pre-heating (before unloading of the wafer boat), the lamp is turned on to heat the heating chamber. [Supplementary Note 10] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber is a heating chamber that heats the substrate support and the substrate; the heating chamber is provided with a SiC member to form the heating chamber like a hot wall. [Supplementary Note 11] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; when the wafer boat is unloaded, the control of the heater in the lower part of the reaction chamber is switched. [Supplementary Note 12] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; when the wafer boat is unloaded, the heater at the lower part of the reaction chamber is controlled to fix or reduce the power of the heater at the lower part of the reaction chamber. [Supplement 13] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; after the replacement of the plurality of substrates is completed, the wafer boat starts to rotate. [Supplementary Note 14] A substrate processing apparatus comprising: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; in order to suppress deviations in teaching, the heating chamber is cooled.

1:縱型基板處理裝置(基板處理系統) 10:基板 30:移載機 31:鉗 32:臂 33:旋轉軸 34:基部 35:凸緣 36:升降機構部 40:晶舟升降機 42:旋轉驅動部 60:蓋 61:IO埠 62:艙 100:加熱器 101:基板處理裝置 110:第1反應管 111:泵吸部 115:處理室 120:第2反應管 121:間隙 122:開口部 130:噴嘴 140:排氣管 150:隔熱部 151:孔 152:蓋加熱器 160:支撐桿 170:真空搬送室 180:腔室 190:冷卻流徑 200:晶舟 201:圓板 202:支柱 203:基板支撐部 260:控制器 260a:CPU 260b:RAM 260c:記憶裝置 260d:I/O埠 260e:內部匯流排 261:輸出入裝置 262:外部記憶裝置 263:網際網路 300:收納室 301:惰性氣體供給管 310:窗 320:加熱室 321:加熱部 330:移載室 331:基板搬入口 332:閘閥 1200:大氣搬送室 1210:艙開啟器 1220:大氣搬送機器人 1230:升降機 1240:線性致動器 1250:清淨單元 1270:框體 1280:基板搬出入口 1290:基板搬出入口 1300:移載室 1310:框體 1320:基板載置台 1330:閘閥 1340:基板搬出入口 1350:閘閥 1490:閘閥1: Vertical substrate processing equipment (substrate processing system) 10: substrate 30: Transfer machine 31: Clamp 32: arm 33: Rotation axis 34: Base 35: flange 36: Lifting mechanism department 40: Crystal Boat Lift 42: Rotation drive 60: cover 61: IO port 62: cabin 100: heater 101: Substrate processing device 110: The first reaction tube 111: Pumping part 115: processing room 120: second reaction tube 121: gap 122: opening 130: nozzle 140: exhaust pipe 150: Insulation Department 151: Hole 152: Lid heater 160: support rod 170: Vacuum transfer chamber 180: Chamber 190: cooling flow path 200: Crystal Boat 201: round plate 202: Pillar 203: substrate support 260: Controller 260a: CPU 260b: RAM 260c: memory device 260d: I/O port 260e: internal bus 261: I/O device 262: External memory device 263: Internet 300: storage room 301: Inert gas supply pipe 310: window 320: heating chamber 321: Heating Department 330: Transfer Room 331: board import entrance 332: Gate Valve 1200: Atmospheric transfer room 1210: cabin opener 1220: Atmospheric transport robot 1230: Lift 1240: Linear actuator 1250: cleaning unit 1270: frame 1280: Board removal entrance 1290: Board removal entrance 1300: transfer room 1310: frame 1320: Substrate mounting table 1330: gate valve 1340: Board removal entrance 1350: gate valve 1490: gate valve

圖1為實施例1之基板處理裝置之概略構成的區塊圖。 圖2為實施例1之基板處理裝置中，表示將搭載了基板之晶舟搬入至處理室之狀態的處理室與晶舟收納室的簡略剖面圖。 圖3為實施例1之基板處理裝置中，表示將搭載了基板之晶舟由處理室搬出時之狀態的處理室與晶舟收納室的簡略剖面圖。 圖4為實施例1之基板處理裝置中，表示將搭載了基板之晶舟搬入至晶舟收納室之狀態的處理室與晶舟收納室的簡略剖面圖。 圖5為變形例1之基板處理裝置中，表示於加熱室之周圍配置了環狀之加熱器之狀態的晶舟收納室的簡略剖面圖。 圖6為變形例2之基板處理裝置中，表示將加熱室之周圍之加熱器區分構成為3個區塊之狀態的晶舟收納室的簡略剖面圖。 圖7為表示本發明實施例之基板處理裝置之加熱室的其他實施形態的簡略剖面圖。 圖8為表示本發明實施例之基板處理裝置之加熱室的其他實施形態的簡略剖面圖。 圖9為表示本發明實施例之基板處理裝置之使各部動作的控制部概略構成的區塊圖。 圖10為表示本發明實施例之半導體裝置製造步驟之流程圖。 圖11為表示本發明實施例之基板處理裝置之加熱室的其他實施形態的簡略剖面圖。FIG. 1 is a block diagram of the schematic configuration of the substrate processing apparatus of Example 1. FIG. 2 is a schematic cross-sectional view of the processing chamber and the wafer boat storage chamber in the substrate processing apparatus of Example 1, showing a state in which the wafer boat loaded with the substrate is carried into the processing chamber. 3 is a schematic cross-sectional view of the processing chamber and the wafer boat storage chamber in the substrate processing apparatus of Example 1, showing the state when the wafer boat on which the substrate is mounted is carried out from the processing chamber. 4 is a schematic cross-sectional view of the processing chamber and the wafer boat storage chamber in the substrate processing apparatus of Example 1, showing a state where the wafer boat loaded with the substrate is carried into the wafer boat storage chamber. 5 is a schematic cross-sectional view of the wafer boat storage chamber in the substrate processing apparatus of Modification 1, showing a state in which a ring-shaped heater is arranged around the heating chamber. 6 is a schematic cross-sectional view of the wafer boat storage chamber in the substrate processing apparatus of Modification 2 in which the heaters around the heating chamber are divided into three blocks. Fig. 7 is a schematic cross-sectional view showing another embodiment of the heating chamber of the substrate processing apparatus according to the embodiment of the present invention. Fig. 8 is a schematic cross-sectional view showing another embodiment of the heating chamber of the substrate processing apparatus according to the embodiment of the present invention. Fig. 9 is a block diagram showing a schematic configuration of a control unit for operating each unit of the substrate processing apparatus according to the embodiment of the present invention. FIG. 10 is a flowchart showing the manufacturing steps of a semiconductor device according to an embodiment of the present invention. Fig. 11 is a schematic cross-sectional view showing another embodiment of the heating chamber of the substrate processing apparatus according to the embodiment of the present invention.

1:縱型基板處理裝置(基板處理系統) 1: Vertical substrate processing equipment (substrate processing system)

10:基板 10: substrate

30:移載機 30: Transfer machine

31:鉗 31: Clamp

32:臂 32: arm

33:旋轉軸 33: Rotation axis

34:基部 34: Base

35:凸緣 35: flange

36:升降機構部 36: Lifting mechanism department

40:晶舟升降機 40: Crystal Boat Lift

42:旋轉驅動部 42: Rotation drive

60:蓋 60: cover

61:IO埠 61: IO port

62:艙 62: cabin

100:加熱器 100: heater

101:基板處理裝置 101: Substrate processing device

110:第1反應管 110: The first reaction tube

111:泵吸部 111: Pumping part

115:處理室 115: processing room

120:第2反應管 120: second reaction tube

121:間隙 121: gap

122:開口部 122: opening

130:噴嘴 130: nozzle

140:排氣管 140: exhaust pipe

150:隔熱部 150: Insulation Department

152:蓋加熱器 152: Lid heater

160:支撐桿 160: support rod

170:真空搬送室 170: Vacuum transfer chamber

180:腔室 180: Chamber

190:冷卻流徑 190: cooling flow path

200:晶舟 200: Crystal Boat

201:圓板 201: round plate

202:支柱 202: Pillar

203:基板支撐部 203: substrate support

260:控制器 260: Controller

301:惰性氣體供給管 301: Inert gas supply pipe

310:窗 310: window

320:加熱室 320: heating chamber

321:加熱部 321: Heating Department

330:移載室 330: Transfer Room

331:基板搬入口 331: board import entrance

332:閘閥 332: Gate Valve

1200:大氣搬送室 1200: Atmospheric transfer room

1210:艙開啟器 1210: cabin opener

1220:大氣搬送機器人 1220: Atmospheric transport robot

1230:升降機 1230: Lift

1240:線性致動器 1240: Linear actuator

1250:清淨單元 1250: cleaning unit

1270:框體 1270: frame

1280:基板搬出入口 1280: Board removal entrance

1290:基板搬出入口 1290: Board removal entrance

1300:移載室 1300: transfer room

1310:框體 1310: frame

1320:基板載置台 1320: Substrate mounting table

1330:閘閥 1330: gate valve

1340:基板搬出入口 1340: Board removal entrance

1350:閘閥 1350: gate valve

Claims (18)

一種基板處理裝置，其具有： 對基板進行處理之處理室； 連通於處理室下方，將上述基板移載至配置於上述處理室內之基板支撐具的移載室；與 連通於上述移載室之下方，對上述基板支撐具與上述基板進行加熱的加熱室。A substrate processing device, which has: Processing room for processing substrates; Connected to the lower part of the processing chamber to transfer the substrate to the transfer chamber of the substrate support arranged in the processing chamber; and A heating chamber communicating with the lower part of the transfer chamber and heating the substrate support and the substrate. 如請求項1之基板處理裝置，其具有：設於上述加熱室，對上述基板進行加熱的第1加熱部。The substrate processing apparatus according to claim 1, including: a first heating unit that is provided in the heating chamber and heats the substrate. 如請求項1之基板處理裝置，其中，上述移載室之相對於上述基板之面垂直方向的長度，係構成為較上述加熱室之相對於上述基板之面垂直方向的長度短。The substrate processing apparatus of claim 1, wherein the length of the transfer chamber in the direction perpendicular to the surface of the substrate is configured to be shorter than the length of the heating chamber in the direction perpendicular to the surface of the substrate. 如請求項1之基板處理裝置，其中，上述加熱室之相對於上述基板之面垂直方向的長度，係構成為上述基板支撐具之載置上述基板之區域的長度。The substrate processing apparatus according to claim 1, wherein the length of the heating chamber in the direction perpendicular to the surface of the substrate is configured as the length of the area of the substrate supporter where the substrate is placed. 如請求項1之基板處理裝置，其具有使上述基板支撐具升降的升降機構；並具有： 控制部，係構成為可控制上述升降機構，俾交替進行上述基板支撐具之下降、及處理後之基板與處理前之基板的替換，使所載置之處理前之基板依序於上述加熱室進行加熱。Such as the substrate processing apparatus of claim 1, which has a lifting mechanism for lifting the above-mentioned substrate support; and has: The control unit is configured to control the above-mentioned lifting mechanism to alternately lower the above-mentioned substrate support and replace the processed substrate with the pre-processed substrate, so that the placed pre-processed substrate is sequentially placed in the heating chamber Heat up. 如請求項2之基板處理裝置，其具有使上述基板支撐具升降的升降機構；並具有： 控制部，係構成為可控制上述第1加熱部與上述升降機構，俾交替進行上述基板支撐具之下降、及處理後之基板與處理前之基板的替換，使所載置之處理前之基板依序於上述加熱室進行加熱。Such as the substrate processing apparatus of claim 2, which has an elevating mechanism for raising and lowering the above-mentioned substrate support; and has: The control unit is configured to control the first heating unit and the lifting mechanism so as to alternately lower the substrate support and replace the processed substrate with the pre-processed substrate, so that the placed pre-processed substrate The heating is performed in the above heating chamber in sequence. 如請求項1之基板處理裝置，其具有使上述基板支撐具升降的升降機構；並具有： 控制部，係構成為可控制上述升降機構，俾交替進行上述基板支撐具之下降、及複數之處理後之基板與複數之處理前之基板的替換，使所載置之上述複數之處理前之基板全部一概進行加熱。Such as the substrate processing apparatus of claim 1, which has a lifting mechanism for lifting the above-mentioned substrate support; and has: The control unit is configured to control the above-mentioned lifting mechanism to alternately perform the lowering of the above-mentioned substrate support, and the replacement of the plurality of substrates after processing and the plurality of substrates before the processing, so that the placed before the plural processing All the substrates are heated. 如請求項2之基板處理裝置，其具有使上述基板支撐具升降的升降機構；並具有： 控制部，係構成為可控制上述升降機構，俾交替進行上述基板支撐具之下降、及複數之處理後之基板與複數之處理前之基板的替換，使所載置之上述複數之處理前之基板全部一概進行加熱。Such as the substrate processing apparatus of claim 2, which has an elevating mechanism for raising and lowering the above-mentioned substrate support; and has: The control unit is configured to control the above-mentioned lifting mechanism to alternately perform the lowering of the above-mentioned substrate support, and the replacement of the plurality of substrates after processing and the plurality of substrates before the processing, so that the placed before the plural processing All the substrates are heated. 如請求項1之基板處理裝置，其具有： 使上述基板支撐具升降的升降機構；與 對上述處理室進行加熱，具有複數區塊的加熱器； 並具有控制部，其構成為可控制上述升降機構與上述加熱器，俾在使上述基板支撐具下降時，於上述加熱器之上述複數之區塊內，切換設於下部之區塊之加熱器的控制。Such as the substrate processing device of claim 1, which has: A lifting mechanism for lifting the above-mentioned substrate support; and Heating the above-mentioned processing chamber, with heaters of plural blocks; It also has a control unit, which is configured to control the lifting mechanism and the heater, so that when the substrate support is lowered, the heater in the plurality of blocks of the heater is switched to the heater in the lower block control. 如請求項9之基板處理裝置，其中，上述控制部係構成為可控制上述加熱器，俾在使上述基板支撐具下降時，於上述加熱器之上述複數之區塊內，使對於設於下部區塊之加熱器的電力固定或減少。The substrate processing apparatus according to claim 9, wherein the control unit is configured to control the heater so that when the substrate support is lowered, the heater is located in the lower part of the plurality of blocks. The power of the heater in the block is fixed or reduced. 如請求項2之基板處理裝置，其具有使上述基板支撐具旋轉的旋轉機構；並具有： 控制部，其構成為可控制上述旋轉機構，俾在上述基板對上述基板支撐具之替換結束後，開始上述基板支撐具之旋轉。Such as the substrate processing apparatus of claim 2, which has a rotating mechanism for rotating the above-mentioned substrate support; and has: The control unit is configured to control the rotation mechanism so as to start the rotation of the substrate support after the replacement of the substrate with the substrate support is completed. 如請求項2之基板處理裝置，其中，於上述移載室中，具有對上述基板支撐具之上部側進行加熱的第2加熱部。The substrate processing apparatus according to claim 2, wherein the transfer chamber has a second heating unit that heats the upper side of the substrate support. 如請求項12之基板處理裝置，其具有：控制部，係構成為可控制成於上述基板對上述基板支撐具之替換結束後，將上述第1加熱部與上述第2加熱部設為ON。The substrate processing apparatus according to claim 12 includes a control unit configured to be controlled to turn on the first heating unit and the second heating unit after the replacement of the substrate with the substrate support is completed. 如請求項1之基板處理裝置，其中，上述移載室與上述加熱室與上述處理室為連通，並具有將各個空間進行真空排氣的排氣部。The substrate processing apparatus according to claim 1, wherein the transfer chamber, the heating chamber, and the processing chamber are in communication with each other, and have an exhaust part that evacuates each space. 如請求項1之基板處理裝置，其具有：設於上述加熱室之壁的SiC構件。A substrate processing apparatus according to claim 1, which has a SiC member provided on the wall of the heating chamber. 如請求項1之基板處理裝置，其中，上述加熱室具有冷卻部。The substrate processing apparatus according to claim 1, wherein the heating chamber has a cooling part. 一種半導體裝置之製造方法，係具有： (a)於連通於處理室下方之移載室，將基板移載至配置於上述處理室內之基板支撐具的步驟； (b)於連通於上述移載室下方之加熱室，對上述基板進行加熱的步驟； (c)於上述(b)後，使上述基板移動至上述處理室並進行處理的步驟。A method of manufacturing a semiconductor device has: (a) The step of transferring the substrate to the substrate support arranged in the above-mentioned processing chamber in the transfer chamber connected below the processing chamber; (b) The step of heating the substrate in a heating chamber connected below the transfer chamber; (c) After the above (b), the step of moving the substrate to the processing chamber and performing processing. 一種記錄媒體，係記錄了藉由電腦使基板處理裝置實行下述手續的程式： (a)於連通於處理室下方之移載室，將基板移載至配置於上述處理室內之基板支撐具的手續； (b)於連通於上述移載室下方之加熱室，對上述基板進行加熱的手續； (c)於上述(b)後，使上述基板移動至上述處理室並進行處理的手續。A recording medium that records a computer program for the substrate processing device to perform the following procedures: (a) The procedure of transferring the substrate to the substrate support arranged in the above-mentioned processing chamber in the transfer chamber connected to the lower part of the processing chamber; (b) Procedures for heating the substrate in the heating chamber connected to the lower part of the transfer chamber; (c) After the above (b), the above-mentioned substrate is moved to the above-mentioned processing chamber and processed.
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