TW202040637A - Substrate processing apparatus and conveyance control method thereof - Google Patents
Substrate processing apparatus and conveyance control method thereof Download PDFInfo
- Publication number
- TW202040637A TW202040637A TW109103629A TW109103629A TW202040637A TW 202040637 A TW202040637 A TW 202040637A TW 109103629 A TW109103629 A TW 109103629A TW 109103629 A TW109103629 A TW 109103629A TW 202040637 A TW202040637 A TW 202040637A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing
- liquid
- liquid film
- processing unit
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 442
- 238000012545 processing Methods 0.000 title claims abstract description 356
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000007788 liquid Substances 0.000 claims abstract description 254
- 230000007246 mechanism Effects 0.000 claims abstract description 33
- 230000032258 transport Effects 0.000 claims description 23
- 230000007723 transport mechanism Effects 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000000352 supercritical drying Methods 0.000 claims description 12
- 230000009471 action Effects 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 abstract description 42
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 32
- 238000001035 drying Methods 0.000 description 22
- 239000012530 fluid Substances 0.000 description 18
- 230000006870 function Effects 0.000 description 17
- 229910002092 carbon dioxide Inorganic materials 0.000 description 16
- 239000001569 carbon dioxide Substances 0.000 description 16
- 238000011282 treatment Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J19/00—Accessories fitted to manipulators, e.g. for monitoring, for viewing; Safety devices combined with or specially adapted for use in connection with manipulators
- B25J19/02—Sensing devices
- B25J19/021—Optical sensing devices
- B25J19/023—Optical sensing devices including video camera means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J9/00—Programme-controlled manipulators
- B25J9/16—Programme controls
- B25J9/1679—Programme controls characterised by the tasks executed
- B25J9/1692—Calibration of manipulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Robotics (AREA)
- Mechanical Engineering (AREA)
- Multimedia (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Weting (AREA)
Abstract
Description
本發明係關於一種於複數個處理部之間搬送基板之基板處理裝置,尤其係關於在基板表面形成有液膜之狀態下之搬送之控制。The present invention relates to a substrate processing apparatus that transports a substrate between a plurality of processing units, and particularly relates to the control of the transportation in a state where a liquid film is formed on the surface of the substrate.
於半導體基板或顯示面板用玻璃基板等基板之製造製程中,為了分別由個別之處理部執行不同之處理,需要於複數個處理部之間進行基板之搬送。該情形時,需要預先防止以下問題,即,由於搬送中基板表面之露出而導致之表面氧化,或搬送路徑上之懸浮物附著於基板表面,進而形成於基板之微細圖案之坍塌等。因此,有將基板之表面以液膜覆蓋之狀態進行搬送之案例。In the manufacturing process of substrates such as semiconductor substrates or glass substrates for display panels, in order to perform different processes by individual processing units, it is necessary to transport the substrates between a plurality of processing units. In this case, it is necessary to prevent the following problems in advance, that is, surface oxidation due to exposure of the substrate surface during transport, or suspension of suspended matter on the transport path adhering to the substrate surface, and the collapse of the fine pattern formed on the substrate. Therefore, there are cases where the surface of the substrate is covered with a liquid film for transportation.
例如,於日本專利特開2010-182817號公報(專利文獻1)中記載之先前技術中,於分別藉由液體處理基板之處理系統間之搬送中,基板以浸漬於搬送托盤中所蓄積之液體中之狀態、或以上表面整體充滿液體之狀態進行搬送。For example, in the prior art described in Japanese Patent Laid-Open No. 2010-182817 (Patent Document 1), in the transfer between processing systems that process substrates by liquids, the substrates are immersed in the liquid accumulated in the transfer tray. It is transported in a state in which the entire surface is filled with liquid.
[發明所欲解決之問題][The problem to be solved by the invention]
於基板之搬送中,由於搬送路徑上之加減速或振動、又液體因揮發引起之減少等而可能導致於搬送中基板表面之一部分露出於周圍環境中。此現象成為製品不良之原因。尤其對形成有微細圖案之基板而言,表面露出會立即引起圖案坍塌,故即便為短時間亦不容許。During the transfer of the substrate, due to acceleration, deceleration or vibration on the transfer path, and reduction of liquid due to volatilization, a part of the substrate surface may be exposed to the surrounding environment during the transfer. This phenomenon becomes the cause of defective products. Especially for a substrate with a fine pattern, the surface exposure will cause the pattern to collapse immediately, so even a short time is not allowed.
上述先前技術中,由於將基板收容於搬送托盤中,故可期待某種程度穩定之搬送,但尚不具有防止由於如上所述之振動、液體之揮發等而導致之暫時性的基板表面之露出的功能。In the above-mentioned prior art, since the substrate is contained in the transfer tray, a certain degree of stable transfer can be expected, but it does not yet prevent the temporary exposure of the substrate surface due to the above-mentioned vibration, volatilization of liquid, etc. Function.
本發明係鑒於上述問題而完成,其目的在於提供一種技術,於將基板表面以液膜覆蓋之狀態下搬送基板之基板處理裝置中,可防止由於搬送中之振動或液體之揮發等而導致基板表面之露出。 [解決問題之技術手段]The present invention has been completed in view of the above-mentioned problems, and its purpose is to provide a technique for preventing the substrate from being caused by vibration during transportation or volatilization of liquid in a substrate processing apparatus that transports the substrate while the substrate surface is covered with a liquid film. The surface is exposed. [Technical means to solve the problem]
為達成上述目的,本發明之基板處理裝置之一態樣具備:第1處理部,其將液體供給至基板且以液膜覆蓋上述基板之表面;搬送機構,其搬送擔載上述液膜之上述基板;第2處理部,其接收藉由上述搬送機構搬送之上述基板且執行特定之處理;拍攝部,其拍攝形成於上述基板之表面之上述液膜;及控制部,其基於在自形成上述液膜起直至藉由上述搬送機構將上述基板搬入上述第2處理部之期間之互不相同的時刻分別由上述拍攝部所拍攝之複數個圖像之差,而控制上述搬送機構之動作。In order to achieve the above-mentioned object, one aspect of the substrate processing apparatus of the present invention includes: a first processing section that supplies a liquid to a substrate and covers the surface of the substrate with a liquid film; and a transport mechanism that transports the liquid film carrying the liquid film. Substrate; a second processing section, which receives the substrate transported by the transport mechanism and performs specific processing; an imaging section, which photographs the liquid film formed on the surface of the substrate; and a control section, which is based on the self-forming The operation of the transport mechanism is controlled by the difference between the plurality of images taken by the imaging section from the liquid film until the time when the substrate is transported into the second processing section by the transport mechanism.
又,本發明之另一態樣係一種基板處理裝置之搬送控制方法,該基板處理裝置具有:第1處理部,其將液體供給至基板且以液膜覆蓋上述基板之表面;第2處理部,其接收擔載上述液膜之上述基板且執行特定之處理;及搬送機構,其於上述第1處理部與上述第2處理部之間搬送上述基板;為達成上述目的,該基板處理裝置之搬送控制方法係於自形成上述液膜起直至將上述基板搬入上述第2處理部之期間之互不相同的時刻分別拍攝上述液膜,且基於所拍攝之複數個圖像之差,而控制上述搬送機構之動作。In addition, another aspect of the present invention is a method for controlling the conveyance of a substrate processing apparatus, the substrate processing apparatus having: a first processing section that supplies liquid to a substrate and covers the surface of the substrate with a liquid film; and a second processing section , Which receives the above-mentioned substrate carrying the above-mentioned liquid film and performs specific processing; and a transport mechanism which transports the above-mentioned substrate between the above-mentioned first processing section and the above-mentioned second processing section; in order to achieve the above-mentioned object, the substrate processing apparatus The conveyance control method is to photograph the liquid film at different times from the formation of the liquid film until the time when the substrate is transferred into the second processing unit, and to control the liquid film based on the difference between the plural images taken. The movement of the transport mechanism.
如此構成之發明中,拍攝搬送中之基板表面之液膜,且基於不同時刻所拍攝之圖像間之差而控制搬送機構之動作。因此,能夠偵測基板表面之液膜狀態之變化,並使其反映於搬送控制中。例如,能夠為了減少振動而抑制搬送速度,或若液膜之厚度降低則補充液體。藉此,可於以液膜覆蓋基板表面之狀態下穩定地搬送,從而可防止基板表面露出。 [發明之效果]In the invention thus constituted, the liquid film on the surface of the substrate being transported is photographed, and the action of the transport mechanism is controlled based on the difference between the images taken at different times. Therefore, the change in the state of the liquid film on the surface of the substrate can be detected and reflected in the transport control. For example, it is possible to suppress the conveying speed in order to reduce vibration, or to replenish the liquid if the thickness of the liquid film decreases. Thereby, the substrate surface can be stably conveyed in the state where the liquid film covers the substrate surface, and the substrate surface can be prevented from being exposed. [Effects of Invention]
如上所述,根據本發明,拍攝搬送中之基板表面之液膜並使其變化反映於搬送控制中,故能夠於使基板表面之液膜穩定之狀態下搬送基板。藉此,可防止由於搬送中之振動或液體之揮發等而導致之基板表面露出。As described above, according to the present invention, the liquid film on the substrate surface during transport is photographed and the change is reflected in the transport control, so that the substrate can be transported in a state where the liquid film on the substrate surface is stabilized. This prevents the surface of the substrate from being exposed due to vibration during transportation or volatilization of liquid.
本發明之上述以及其他目的與新穎之特徵只要參照隨附圖式並能閱讀以下詳細之說明,則可更完全地明瞭。但是,圖式係專門用於解說者,並非限定本發明之範圍者。The above-mentioned and other objects and novel features of the present invention can be more fully understood as long as they refer to the accompanying drawings and can read the following detailed description. However, the drawings are used exclusively for illustration and do not limit the scope of the present invention.
圖1A及圖1B係表示本發明之基板處理裝置之一實施形態之概略構成的圖。更具體而言,圖1A係表示本發明之一實施形態之基板處理裝置1之俯視圖,圖1B係表示基板處理裝置1之側視圖。再者,該等圖並非表示裝置之外觀,而是藉由將裝置之外壁面板或其他一部分構成除外而容易理解地表示其內部構造之模式圖。該基板處理裝置1例如係設置於無塵室內,且用以對基板實施特定之處理之裝置。1A and 1B are diagrams showing a schematic configuration of an embodiment of the substrate processing apparatus of the present invention. More specifically, FIG. 1A is a plan view of the
此處,作為本實施形態之「基板」,能夠應用半導體基板、光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display,場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板等各種基板。以下,主要以用於半導體基板之處理之基板處理裝置為例而參照圖式進行說明。然而,對於以上例示之各種基板之處理亦可同樣地應用。Here, as the "substrate" of the present embodiment, semiconductor substrates, glass substrates for photomasks, glass substrates for liquid crystal display, glass substrates for plasma display, substrates for FED (Field Emission Display), optical discs can be applied. Various substrates such as substrates, substrates for magnetic disks, and substrates for optical magnetic disks. Hereinafter, a substrate processing apparatus used for processing semiconductor substrates will be mainly used as an example for description with reference to the drawings. However, the treatments for the various substrates exemplified above can also be similarly applied.
如圖1A所示,基板處理裝置1具備對基板S實施處理之基板處理部10、及與該基板處理部10結合之移載傳送部20。移載傳送部20具備容器保持部21與移載傳送機器人22。移載傳送部20可保持複數個用以收容基板S之容器C。作為容器C,可使用以密閉之狀態收容複數片基板S之FOUP(Front Opening Unified Pod,前開式晶圓盒)、SMIF(Standard Mechanical Interface,標準機械界面)箱、OC(Open Cassette,開放式晶匣)等。移載傳送機器人22進出保持於容器保持部21之容器C,自容器C取出未處理之基板S,或將處理過的基板收納於容器C。於各容器C中,以大致水平之姿勢收容有複數片基板S。As shown in FIG. 1A, the
移載傳送機器人22具備基底部221、多關節臂222、及手223。基底部221固定於裝置殼體。多關節臂222設置成能夠相對於基底部221繞鉛垂軸旋動。於多關節臂222之前端,安裝有手223。手223成為可於其上表面載置並保持基板S之構造。此種具有多關節臂及基板保持用手之移載傳送機器人已眾所周知,故省略詳細之說明。The
基板處理部10具備:中心機器人15,其配置於俯視下之大致中央;及複數個基板處理單元,其等以包圍該中心機器人15之方式配置。具體而言,面向配置有中心機器人15之空間而配置複數個(該例中為4個)基板處理單元11A、12A、13A、14A。該等基板處理單元11A~14A係分別對基板S執行特定之處理者。於將該等處理單元設為相同功能者之情形時,能夠進行複數片基板之平行處理。又,亦可構成為將功能不同之處理單元組合而對1片基板依序執行不同之處理。The
如下所述,本實施形態之基板處理裝置1用於將基板S藉由特定之處理液進行濕式處理之後,使基板S乾燥之一連串之處理。為了該目的,4個基板處理單元中之2個基板處理單元11A、12A負責對基板S之濕式處理,並於內部具備用以能夠進行該處理之構成。又,其他2個基板處理單元13A、14A負責自濕式處理後之基板S去除殘存液且使基板S乾燥之處理(乾燥處理),並於內部具備用以能夠進行該處理之構成。As described below, the
各基板處理單元11A~14A中,執行對基板S之處理之基板處理主體收容於在面向中心機器人15之側面設置有開閉自如之擋板之處理腔室內。即,基板處理單元11A具有處理腔室110、及設置於處理腔室110中之面向中心機器人15之側面之擋板111。擋板111設置成覆蓋設置於處理腔室110之面向中心機器人15之側面之開口部(未圖示)。若擋板111打開則開口部露出,能夠經由該開口部進行基板S之搬入及搬出。又,於處理腔室110內執行對基板S之處理時,藉由關閉擋板111而將處理腔室110內之環境自外部阻隔。In each of the
同樣地,基板處理單元12A具有處理腔室120、及設置於處理腔室120中之面向中心機器人15之側面之擋板121。又,基板處理單元13A具有處理腔室130、及設置於處理腔室130中之面向中心機器人15之側面之擋板131。又,基板處理單元14A具有處理腔室140、及設置於處理腔室140中之面向中心機器人15之側面之擋板141。Similarly, the
而且,如此配置於水平方向之基板處理單元之組件於上下方向上配置複數段(本例中為2段)。即,如圖1B所示,於基板處理單元11A之下方設置有基板處理單元11B。基板處理單元11B之構成及功能與基板處理單元11A相同。又,於基板處理單元12A之下方,設置有與基板處理單元12A相同之構成、相同之功能之基板處理單元12B。同樣地,於基板處理單元13A之下部亦設置有基板處理單元13B(圖2),又,於基板處理單元14A之下部亦設置有未圖示之基板處理單元。再者,基板處理單元之段數為任意,並不限定於此處例示之2個。又,每1段之基板處理單元之配設數量亦並不限定於以上所述。Furthermore, the components of the substrate processing unit arranged in the horizontal direction are arranged in a plurality of stages (two stages in this example) in the vertical direction. That is, as shown in FIG. 1B, a
圖2係表示中心機器人之構成及設置環境之圖。中心機器人15可自移載傳送機器人22接收未處理之基板S,且可將處理過的基板S移交給移載傳送機器人22。更具體而言,中心機器人15具備基台部151、升降部152、旋轉部153、伸縮臂154、及手155。基台部151固定於基板處理部10之底部框架,且支持中心機器人15之各構成。升降部152安裝於基台部151,且於升降部152之上部安裝有旋轉部153。升降部152於鉛垂方向上伸縮自如,且藉由該伸縮運動而使旋轉部153升降。Figure 2 is a diagram showing the structure and installation environment of the central robot. The
旋轉部153能夠相對於升降部152繞鉛垂軸旋動。於旋轉部153安裝有伸縮臂154之基部,於伸縮臂154之前端部安裝有手155。伸縮臂154沿水平方向於特定之範圍伸縮。手155為如下構造,即,可於其上表面載置並保持基板S,而且能夠與移載傳送機器人22之手223之間交接基板S。此種構造之手之機構已眾所周知,故省略詳細之說明。The
藉由伸縮臂154沿水平方向伸縮,而可使保持於手155之基板S沿水平方向移動。又,藉由旋轉部153相對於升降部152旋動,而可規定基板S之水平移動之方向。又,藉由升降部152使旋轉部153升降,而可調整基板S之高度,即鉛垂方向位置。By extending and contracting the
於旋轉部153,安裝有朝上延伸之支持構件156。支持構件156以不與手155之伸縮干涉之方式,安裝於旋轉部153側面之與伸縮臂154之伸長方向相反側。於支持構件156之上端安裝有CCD相機157。CCD相機157之光軸方向朝向自水平方向起之稍許下方,自斜上方俯視保持於手155之基板S且使其落入拍攝視野。藉此,可拍攝基板S之上表面。拍攝資料被發送至控制單元90。The
又,於旋轉部153設置有補充液噴嘴158。補充液噴嘴158於保持於手155之基板S之上方朝下開口。補充液噴嘴158連接於未圖示之低表面張力液供給部(下述),且視需要將自低表面張力液供給部供給之低表面張力液供給至基板S。In addition, a replenishing
如上所述構成之基板處理裝置1中,以如下方式執行對基板S之處理。於初始狀態下,於載置在容器保持部21之容器C中收容有未處理之基板S。移載傳送機器人22自容器C取出1片未處理基板S且移交給中心機器人15。中心機器人15將所接收之基板S搬入至要執行對該基板S之處理之基板處理單元。In the
例如將基板S搬入至基板處理單元11A之情形時,如圖2所示,中心機器人15藉由升降部152而調整旋轉部153之高度,將保持於手155之基板S定位於基板處理單元11A之處理腔室110側面之擋板111之高度。打開擋板111,伸縮臂154朝處理腔室110側面之開口部伸長,藉此將基板S搬入至處理腔室110。於伸縮臂154退避後,關閉擋板111,於處理腔室110內執行對基板S之處理。基板S相對於其他基板處理單元之搬入亦可以相同之方式進行。For example, when the substrate S is loaded into the
另一方面,於自基板處理單元11A取出處理過的基板S時,伸縮臂154進入至已打開擋板111之處理腔室110且取出處理過的基板S。對所取出之基板S,可搬入至其他基板處理單元而執行新的處理,又亦可經由移載傳送機器人22而返回至容器C。關於本實施形態之具體的處理順序將於以下詳細說明。On the other hand, when taking out the processed substrate S from the
如圖2所示,中心機器人15設置於側方及上方藉由間隔壁101而與外部空間隔開之搬送空間TS。基板處理單元11A將處理腔室110之設置有擋板111之側面面向搬送空間TS而安裝於間隔壁101之側部。其他基板處理單元亦相同。As shown in FIG. 2, the
除以上所述之外,於基板處理裝置1中,設置有用以控制裝置各部之動作之控制單元90。控制單元90至少包含CPU(Central Processing Unit,中央處理單元)91、及記憶體92。CPU91藉由執行預先準備之控制程式而使裝置各部執行特定之動作。又,記憶體92記憶CPU91應執行之控制程式、或藉由該執行而產生之資料等。與上述移載傳送機器人22及中心機器人15之動作、各處理腔室中之擋板之開閉或對基板S之各種處理等相關的動作由執行控制程式之CPU91來控制。In addition to the above, the
圖3A及圖3B係表示執行濕式處理之基板處理單元之圖。更具體而言,圖3A係表示基板處理單元11A之構成之圖,圖3B係用以說明基板處理單元11A之動作之圖。此處,對基板處理單元11A之構成進行說明,執行濕式處理之其他基板處理單元11B、12A等之構成亦基本相同。3A and 3B are diagrams showing a substrate processing unit performing wet processing. More specifically, FIG. 3A is a diagram showing the configuration of the
基板處理單元11A於處理腔室110內具備作為基板處理主體之濕式處理部30。濕式處理部30將處理液供給至基板S之上表面而進行基板S之表面處理或洗淨等。又,為了防止於濕式處理後搬出之基板S之上表面於周圍環境中露出,濕式處理部30一併執行將濕式處理後之基板S之上表面以低表面張力液之液膜覆蓋之液膜形成處理。The
為了該目的,濕式處理部30具備基板保持部31、防濺罩32、處理液供給部33及低表面張力液供給部34。其等之動作由控制單元90控制。基板保持部31具有圓板狀之旋轉夾盤311,該旋轉夾盤311具有與基板S大致相等之直徑,於旋轉夾盤311之周緣部設置有複數個夾盤銷312。夾盤銷312抵接於基板S之周緣部而支持基板S,藉此,旋轉夾盤311能以自基板S之上表面離開之狀態將基板S保持為水平姿勢。For this purpose, the
旋轉夾盤311藉由自其下表面中央部朝下延伸之旋轉支軸313而以上表面成水平之方式被支持。旋轉支軸313藉由安裝於處理腔室110之底部之旋轉機構314而旋轉自如地被支持。旋轉機構314內置有未圖示之旋轉馬達,旋轉馬達根據來自控制單元90之控制指令而旋轉,藉此與旋轉支軸313直接連結之旋轉夾盤311繞以單點鏈線表示之鉛垂軸旋轉。圖3A及圖3B中,上下方向為鉛垂方向。藉此,基板S維持水平姿勢地繞鉛垂軸旋轉。The
以自側方包圍基板保持部31之方式設置防濺罩32。防濺罩32具有以覆蓋旋轉夾盤311之周緣部之方式設置之大致筒狀之護罩321、及設置於護罩321之外周部之下方之液體承接部322。護罩321根據來自控制單元90之控制指令而升降。護罩321於以下位置之間進行升降移動,即,如圖3A所示護罩321之上端部下降至較保持於旋轉夾盤311之基板S之周緣部更靠下方之下方位置、與如圖3B所示護罩321之上端部位於較基板S之周緣部更靠上方之上方位置。The
護罩321位於下方位置時,如圖3A所示,保持於旋轉夾盤311之基板S成為露出於護罩321外之狀態。因此,可防止例如於對旋轉夾盤311搬入及搬出基板S時護罩321成為阻礙。When the
又,護罩321位於上方位置時,如圖3B所示,包圍保持於旋轉夾盤311之基板S之周緣部。藉此,可防止下述之液體供給時自基板S之周緣部甩離之處理液飛散至處理腔室110內,從而能夠確實地回收處理液。即,因基板S旋轉而自基板S之周緣部被甩離之處理液之液滴會附著於護罩321之內壁並朝下方流下,由配置於護罩321下方之液體承接部322收集並回收。為了將複數種處理液個別地回收,亦可將複數段護罩同心設置。In addition, when the
處理液供給部33具有如下構造,即,將旋動支軸332旋動自如地設置於被固定在處理腔室110之基底331,進而,於自旋動支軸332水平伸長之臂333之前端安裝有噴嘴334。臂333藉由旋動支軸332根據來自控制單元90之控制指令旋動而揺動。藉此,臂333前端之噴嘴334於如圖3A所示自基板S之上方朝側方退避之退避位置、與如圖3B所示基板S上方之處理位置之間移動。The processing
噴嘴334連接於設置在控制單元90之處理液供給部(省略圖示)。若自處理液供給部送出適當之處理液,則自噴嘴334朝基板S噴出處理液。如圖3B所示,藉由旋轉夾盤311以相對較低速旋轉而使基板S旋轉,並且定位於基板S之旋轉中心上方之噴嘴33供給處理液Lq。藉此,將基板S之上表面Sa藉由處理液Lq予以處理。作為處理液Lq,可使用顯影液、蝕刻液、洗淨液、洗滌液等具有各種功能之液體,其組成為任意。又,亦可將複數種處理液組合而執行處理。The
低表面張力液供給部34亦具有與處理液供給部33對應之構成。即,低表面張力液供給部34具有基底341、旋動支軸342、臂343、噴嘴344等,其等之構成等同於處理液供給部33中所對應者。臂343藉由旋動支軸342根據來自控制單元90之控制指令旋動而揺動。臂343前端之噴嘴344對濕式處理後之基板S之上表面Sa供給用以形成液膜之低表面張力液。The low surface tension
將上述圖3B之說明中之「處理液Lq」、「臂333」、「噴嘴334」分別改稱為「低表面張力液Lq」、「臂343」、「噴嘴344」,以此說明低表面張力液供給部34之動作。其中所噴出者為低表面張力液,其係與一般處理液不同種類之液體。The "treatment liquid Lq", "
成為處理對象之基板上表面Sa乃形成有微細之凹凸圖案(以下,簡稱為「圖案」)者時,於將濕式處理後之濕潤之基板S乾燥之過程中,會有因進入至圖案內之液體之表面張力而產生圖案坍塌之虞。作為防止此情形之方法,有如下方法:將圖案內之液體置換為表面張力更低之液體後進行乾燥之方法;以昇華性物質之固體覆蓋基板上表面Sa且使昇華性物質昇華之昇華乾燥法;及本實施形態中採用之超臨界乾燥法等。When the upper surface Sa of the substrate to be processed is formed with a fine concavo-convex pattern (hereinafter referred to as "pattern"), during the process of drying the wet substrate S after the wet processing, there may be some cause to enter the pattern The surface tension of the liquid will cause the pattern to collapse. As a method to prevent this, there are the following methods: replacing the liquid in the pattern with a liquid with a lower surface tension and then drying; sublimation drying by covering the upper surface Sa of the substrate with a solid of a sublimation substance and sublimating the sublimation substance Method; and the supercritical drying method used in this embodiment.
為了進行需要高溫、高壓狀態之超臨界乾燥處理,需要另外的與進行濕式處理之腔室不同之高壓腔室。因此,需將濕式處理後之基板S搬送至高壓腔室。為避免因搬送中基板表面之露出而導致圖案坍塌,較理想為以液體或固體覆蓋基板上表面Sa。此時,自更確實地防止由表面張力導致之圖案坍塌之觀點而言,覆蓋基板上表面Sa之液體較理想為表面張力較處理液小之液體。本說明書中將此種性質之液體稱為「低表面張力液」。In order to perform the supercritical drying process that requires high temperature and high pressure, another high pressure chamber is required that is different from the chamber for wet processing. Therefore, the wet-processed substrate S needs to be transported to the high-pressure chamber. In order to avoid pattern collapse due to exposure of the substrate surface during transportation, it is more desirable to cover the upper surface Sa of the substrate with liquid or solid. At this time, from the viewpoint of more reliably preventing pattern collapse caused by surface tension, the liquid covering the upper surface Sa of the substrate is preferably a liquid having a smaller surface tension than the treatment liquid. In this manual, liquids of this nature are called "low surface tension liquids".
本實施形態中,於以低表面張力液之液膜覆蓋基板上表面Sa之狀態下進行搬送。液膜以如下方式形成。如圖3B所示,於基板S以特定之旋轉速度旋轉之狀態下,將自設置於控制單元90之低表面張力液供給部(省略圖示)供給之低表面張力液Lq自噴嘴343噴出,藉此,基板上表面Sa成為由低表面張力液之液膜LF覆蓋之狀態。作為低表面張力液,較理想為與用於濕式處理之處理液之混和性良好,且表面張力較該處理液小者。例如,於處理液係以水為主成分者時,可較佳地利用異丙醇(IPA)。以此方式,基板上表面Sa之整體成為由低表面張力液之液膜LF覆蓋之狀態。In this embodiment, conveyance is performed in a state where the upper surface Sa of the substrate is covered with a liquid film of a low surface tension liquid. The liquid film is formed in the following manner. As shown in FIG. 3B, in a state where the substrate S is rotating at a specific rotation speed, the low surface tension liquid Lq supplied from the low surface tension liquid supply part (not shown) provided in the
又,於處理腔室110內,於由旋轉夾盤311保持之基板S之上方,配置有CCD相機351及照明光源352。CCD相機351之光軸方向朝向自水平方向起之稍許下方。因此,CCD相機351自斜上方俯視保持於旋轉夾盤311之基板S且使其落入拍攝視野。照明光源352將用於拍攝之照明光朝基板S照射。藉此,拍攝基板S之上表面。拍攝資料被發送至控制單元90。In addition, in the
於上表面Sa由液膜LF覆蓋之狀態下自基板處理單元11A搬出之基板S被搬送至基板處理單元13A且受到乾燥處理。即,基板處理單元13A具有執行作為基板處理之乾燥處理之功能,該乾燥處理係去除形成於以水平姿勢搬入之基板S之上表面Sa之液膜LF,使基板S乾燥。作為乾燥處理,應用將基板S以超臨界流體覆蓋後使超臨界流體(不經由液相)氣化而去除之超臨界乾燥。此處對基板處理單元13A之構成進行說明,執行乾燥處理之其他基板處理單元13B、14A等之構成亦基本相同。The substrate S carried out from the
圖4係表示執行超臨界乾燥處理之基板處理單元之圖。更具體而言,圖4係表示基板處理單元13A之內部構造之側面剖視圖。超臨界乾燥處理之原理及為此所需之基本構成已眾所周知,故此處省略詳細之說明。基板處理單元13A具備高壓腔室130,且於其內部設置有作為乾燥處理之執行主體之乾燥處理部40。乾燥處理部40中,用以載置基板S之平台41設置於高壓腔室130內。平台41藉由吸附保持或機械保持而將上表面Sa被液膜覆蓋之基板S保持。高壓腔室130為高壓,故為了耐高壓而使用內部構成相對較簡單、又能耐高壓之構件。Fig. 4 is a diagram showing a substrate processing unit that performs supercritical drying processing. More specifically, FIG. 4 is a side sectional view showing the internal structure of the
於平台41之下表面中央,旋轉支軸42朝下延伸。旋轉支軸42經由高壓密封旋轉導入機構43而插通於高壓腔室130之底面。高壓密封旋轉導入機構43之旋轉軸431連接於旋轉機構432。因此,若旋轉機構432根據來自控制單元90之控制指令而作動,則基板S與平台41一起繞由單點鏈線表示之鉛垂方向之旋轉軸旋轉。At the center of the lower surface of the
於高壓腔室130之內部且平台41之上方設置有流體分散構件44。流體分散構件44係設置有複數個相對於平板狀之閉塞板441而上下貫通之貫通孔442者。視需要將二氧化碳氣體自二氧化碳供給部45供給至高壓腔室130之上部,二氧化碳氣體藉由流體分散構件44而整流,自基板S之上方朝基板S均勻地供給。A
又,視需要將氮自氮供給部46導入至高壓腔室130內。視需要,將氮以各種形態,亦即作為常溫或升溫後之氣體、或作為經冷卻而液化之液體氮,根據沖洗高壓腔室130內之氣體或使腔室內冷卻等目的而供給。In addition, nitrogen is introduced into the
進而,於高壓腔室130連接有排出機構48。排出機構48具有將導入至高壓腔室130內之氣體或液體等各種流體排出之功能。排出機構48為此而具備配管或閥、泵等。藉此,必要時可將高壓腔室130內之流體快速地排出。Furthermore, a
雖省略圖示,但控制單元90具有用以檢測高壓腔室130內之壓力或溫度之構成及用以將其等控制為特定值之構成。即,控制單元90具有將高壓腔室130內之壓力及溫度控制為特定之目標值之功能。Although illustration is omitted, the
其次,對如上所述構成之基板處理裝置1之動作進行說明。如此前所說明,該基板處理裝置1係對基板S依序執行濕式處理及乾燥處理之裝置。該處理之主要流程如下。即,將基板S搬送至執行濕式處理之基板處理單元而執行處理液之處理之後,形成低表面張力液之液膜,將該基板S搬送至執行乾燥處理之基板處理單元且去除液膜而使基板S乾燥。以下,對具體之處理內容進行說明。Next, the operation of the
此處,設為基板處理單元11A對1片基板S執行濕式處理,且基板處理單元13A對該1片基板S執行乾燥處理而進行說明。然而,執行濕式處理之基板處理單元與執行乾燥處理之基板處理單元之組合為任意,而並不限定於此。又,以下說明中,為了明確地表示各基板處理單元之作用,分別將執行濕式處理之基板處理單元11A等稱為「濕式處理單元」,又將執行乾燥處理之基板處理單元13A等稱為「乾燥處理單元」。Here, it is assumed that the
圖5係表示該基板處理裝置之動作之流程圖。該動作係藉由CPU91執行預先準備之控制程式以使裝置各部執行特定之動作而實現。首先,移載傳送機器人22自收容未處理基板之容器C之一中取出1片未處理基板S(步驟S101)。繼而,將基板S自移載傳送機器人22移交給中心機器人15(步驟S102)。中心機器人15將基板S搬入至執行濕式處理之基板處理單元(濕式處理單元)11A(步驟S103)。Fig. 5 is a flowchart showing the operation of the substrate processing apparatus. This action is realized by the
搬入有基板S之基板處理單元11A對基板S執行濕式處理(步驟S104)。如前所說明,濕式處理之內容係將處理液供給至基板S而進行基板上表面Sa之加工或洗淨。對濕式處理後之基板S,執行用以形成低表面張力液之液膜LF之液膜形成處理(步驟S105)。The
將藉由液膜形成處理而於上表面Sa形成有液膜LF之基板S藉由中心機器人15自基板處理單元11A取出,且搬入至執行乾燥處理之基板處理單元(乾燥處理單元)13A。即,執行將基板S自基板處理單元11A移送至基板處理單元13A之移送處理(步驟S106)。作為移送處理可考慮各種態樣,故關於其等各種態樣,以下進行彙總並詳細敍述。The substrate S with the liquid film LF formed on the upper surface Sa by the liquid film forming process is taken out from the
搬入有基板S之基板處理單元13A對基板S執行去除所附著之液體而使基板S乾燥之乾燥處理(步驟S107)。基板處理單元13A中,執行使用有超臨界流體之超臨界乾燥處理。即,自二氧化碳供給部45將二氧化碳導入至高壓腔室130內,且充分提高腔室內壓,藉此,二氧化碳液化。或亦可將液狀之二氧化碳導入至高壓腔室130。液狀之二氧化碳覆蓋基板上表面Sa。液化之二氧化碳充分溶解有機溶劑。因此,殘存於圖案內之IPA等液體由液狀之二氧化碳置換。The
繼而,將高壓腔室130內之溫度及壓力調整為使二氧化碳為超臨界狀態之條件。藉此,高壓腔室130內之二氧化碳成為超臨界流體。超臨界狀態之流體之流動性極高且表面張力極小。尤其自二氧化碳生成之超臨界流體充分溶解IPA、丙酮等有機溶劑。因此,二氧化碳之超臨界流體進入微細圖案之深處,將殘存之有機溶劑成分自圖案內移出。於相對較低壓、低溫下成為超臨界狀態之點亦為將二氧化碳應用於超臨界乾燥處理之理由之一。Then, the temperature and pressure in the high-
繼而,使高壓腔室130內急遽減壓,藉此,超臨界流體不經過液相而直接氣化而自基板S去除。藉此,基板S成為液體成分被完全去除而乾燥之狀態。殘存於圖案內之液體成分由超臨界流體置換,且藉由超臨界流體直接氣化,可避免因圖案內之液體之表面張力導致之圖案坍塌之問題。Then, the pressure in the high-
處理後之基板S藉由中心機器人15而自基板處理單元13A取出(步驟S108)。將取出之處理後之基板S自中心機器人15移交給移載傳送機器人22(步驟S109)。移載傳送機器人22將基板S收容至容器C之一(步驟S110)。供收容處理過的基板S之容器C可為曾經收容有未處理狀態之該基板S之容器,又亦可為其他容器。The processed substrate S is taken out from the
進而於存在應處理之基板之情形時(步驟S111中是),返回至步驟S101,對下一片基板S執行上述處理。若不存在應處理之基板(步驟S111中否),則結束處理。Furthermore, when there is a substrate to be processed (YES in step S111), the process returns to step S101, and the above-mentioned processing is performed on the next substrate S. If there is no substrate to be processed (No in step S111), the processing ends.
以上,對處理1片基板S之情形時之流程進行了說明,但於實際之裝置中並行執行對複數片基板之處理。即,1片基板S於1個基板處理單元內受到處理之期間,能夠同時並行地執行移載傳送機器人22及中心機器人15對於其他基板之搬送、以及由其他基板處理單元進行之基板處理中之至少一者。In the above, the flow in the case of processing one substrate S has been described, but the processing of a plurality of substrates is performed in parallel in an actual device. That is, while one substrate S is being processed in one substrate processing unit, the transfer of the
更具體而言,例如於步驟S102中將基板S自移載傳送機器人22移交給中心機器人15之後,移載傳送機器人22能夠重新進出容器C且取出其他基板。又,例如,於步驟S103中將1片基板S搬入至基板處理單元11A之後,中心機器人15能夠將其他基板搬入至其他基板處理單元,或將經其他基板處理單元處理後之其他基板搬出。More specifically, for example, after the substrate S is transferred from the
因此,於需要對複數片基板S依序進行處理之情形時,藉由適當調節用以處理各基板S之裝置各部之動作順序,而使對複數片基板之處理並行進行。以此方式,能夠使作為基板處理裝置1整體之處理之產能提高。具體之動作順序需根據處理之規格、上述各步驟所需時間或可否同時處理等而適當決定。Therefore, when a plurality of substrates S need to be processed sequentially, the processing of the plurality of substrates can be performed in parallel by appropriately adjusting the operation sequence of each part of the apparatus for processing each substrate S. In this way, the throughput of the processing as the entire
其次,對上述基板處理之移送處理(圖5之步驟S106)之若干態樣進行說明。移送處理之目的在於,將於上表面Sa形成有液膜LF之基板S自基板處理單元11A搬出,且於維持液膜LF之狀態下,亦即在不使基板上表面Sa露出的情況下搬送至基板處理單元13A。為此目的,本實施形態中,使用藉由設置於基板處理單元11A之CCD相機351及設置於中心機器人15之CCD相機157拍攝之圖像。Next, several aspects of the transfer process (step S106 in FIG. 5) of the above-mentioned substrate process will be described. The purpose of the transfer process is to transport the substrate S with the liquid film LF formed on the upper surface Sa from the
圖6係表示移送處理之第1態樣之流程圖。首先,於基板處理單元11A之處理腔室110內,藉由CCD相機351拍攝剛進行液膜形成處理後之基板S(步驟S201)。此時,實際上拍攝覆蓋基板上表面Sa而形成之液膜LF。較理想為覆蓋基板上表面Sa之液膜LF之整體落入圖像中。將所拍攝之圖像之資料作為基準資料保存於控制單元90之記憶體92。Fig. 6 is a flowchart showing the first aspect of the transfer process. First, in the
繼而,中心機器人15之手155進入處理腔室110內而保持基板S(步驟S202),且藉由手155水平移動而開始基板S之搬送(步驟S203)。於搬送中,藉由設置於中心機器人15之CCD相機157而隨時拍攝基板上表面Sa之液膜LF(步驟S204)。較理想為,由CCD相機157拍攝之圖像與由CCD相機351拍攝之圖像之間,基板S於圖像內所占之位置、大小及仰角相同。Then, the
將由拍攝獲得之圖像與最初拍攝之基準圖像加以比較。即,求出由CCD相機157新拍攝之圖像、與處理腔室110內由CCD相機351拍攝之圖像之差分(步驟S205)。若其結果為兩圖像有顯著差異,則認為基板S上之液膜LF有某些變化。例如將兩圖像間每一像素之差分之絕對值於圖像內累計,根據其值是否超出預先設定之基準量(閾值)而可判斷是否有顯著差異。液膜厚度之不同呈現為表面反射率之變動或干擾條紋之產生狀況之不同。藉由求出圖像之差分而可檢測此種不同。The image obtained by shooting is compared with the reference image originally shot. That is, the difference between the image newly captured by the
作為搬送中之液膜中可引起之變化,認為主要為伴隨振動而導致之液面之搖晃、液體落下或揮發而導致之液量減少。針對該等情形,有效的是將低表面張力液補充至基板S。因此,於液膜有顯著變化之情形時(步驟S206中是),自設置於中心機器人15之補充液噴嘴158補充特定量之低表面張力液(步驟S207)。藉此,可防止因液量減少導致之液膜破損。於未見顯著變化之情形時(步驟S206中否),不進行液體補充。As the changes that can be caused in the liquid film during transport, it is considered that the liquid level is shaken due to vibration, and the liquid drops or volatilizes and the amount of liquid decreases. In view of these situations, it is effective to supplement the substrate S with a low surface tension liquid. Therefore, when there is a significant change in the liquid film (Yes in step S206), a specific amount of low surface tension liquid is replenished from the replenishing
於基板S到達目標位置,亦即基板處理單元13A之高壓腔室130內之前,反覆執行上述步驟S204~S207(步驟S208中否)。因此,於基板S移送期間,可時常監視液膜LF之狀態,必要時進行低表面張力液之補充。藉此,可穩定地維持基板S上之液膜。若到達目標位置(步驟S208中是),則基板S自中心機器人15移載至高壓腔室130內之平台41(步驟S209),藉此完成基板S之移送。Before the substrate S reaches the target position, that is, in the high-
圖7係表示移送處理之第2態樣之流程圖。於該態樣中,代替第1態樣中之步驟S207而設有步驟S221。除此以外之處理內容與第1態樣相同,故對於相同處理標註相同符號而省略說明。代替第1態樣中之液體補充而於第2態樣中執行之步驟S221中,變更中心機器人15對基板S之搬送速度。Fig. 7 is a flowchart showing the second aspect of the transfer process. In this aspect, step S221 is provided instead of step S207 in the first aspect. The processing content other than this is the same as that of the first aspect, so the same processing is denoted by the same reference numerals and the description is omitted. In step S221 performed in the second aspect instead of the liquid replenishment in the first aspect, the conveying speed of the substrate S by the
例如於因振動或突然之加減速而導致低表面張力液自基板S落下之案例中,藉由將基板S更緩慢地搬送而可抑制液體落下。即,該情形時只要使搬送速度降低即可。例如於如液膜之表面起波紋之情形時,可視作因振動而導致液膜LF搖晃。另一方面,由液體揮發導致之液量減少呈現為基板S整體之液膜之膜厚降低。此種情形時較佳為使搬送速度增加,以更短時間完成搬送。再者,於單獨實施該態樣之情形時,關於補充液噴嘴158亦可省略。For example, in the case where the low surface tension liquid falls from the substrate S due to vibration or sudden acceleration and deceleration, the liquid falling can be suppressed by transporting the substrate S more slowly. That is, in this case, it is only necessary to reduce the transport speed. For example, when the surface of the liquid film is corrugated, it can be regarded as shaking the liquid film LF due to vibration. On the other hand, the decrease in the liquid volume caused by the volatilization of the liquid appears as a decrease in the film thickness of the liquid film of the entire substrate S. In this case, it is preferable to increase the conveying speed to complete the conveying in a shorter time. Furthermore, when this aspect is implemented separately, the supplementary
圖8係表示移送處理之第3態樣之流程圖。又,圖9係表示包含該移送處理之基板處理動作之流程圖。該態樣中,由於移送處理之內容不同,故基板處理之動作本身亦需改變。此處,對於與之前說明之處理相同內容之處理標註相同符號而省略說明。如圖8所示,第3態樣之移送處理中,於步驟S206中液膜之圖像有顯著變化之情形時,設置用以使以後之處理不同之例外標記(步驟S231)。該情形時,基板S之移送被中斷。Fig. 8 is a flowchart showing the third aspect of the transfer process. In addition, FIG. 9 is a flowchart showing a substrate processing operation including the transfer processing. In this aspect, since the content of the transfer process is different, the operation of the substrate processing itself also needs to be changed. Here, the processing with the same content as the processing described previously is denoted by the same reference numerals and the description is omitted. As shown in FIG. 8, in the transfer process of the third aspect, when the image of the liquid film changes significantly in step S206, an exception flag is set to make the subsequent process different (step S231). In this case, the transfer of the substrate S is interrupted.
如圖9所示,於該態樣之基板處理中,於移送處理(步驟S106)之後追加有判斷是否設置例外標記之步驟S121。於設置有標記之情形時(步驟S121中是),中心機器人15將基板S放回濕式處理單元11A(步驟S122)。隨此,重設例外標記(步驟S123)。繼而,於濕式處理單元11A再次執行液膜形成處理(步驟S105)後,再次執行移送處理(步驟S106)。As shown in FIG. 9, in the substrate processing of this aspect, after the transfer processing (step S106), a step S121 of judging whether to set an exception flag is added. When a mark is provided (Yes in step S121), the
於該態樣中,於基板S上之液膜LF有變化之情形時,於基板處理單元11A再形成液膜LF。若未設置例外標記(步驟S121中否),則液膜LF無較大之變化,故繼續執行乾燥處理(步驟S107)。藉此,可避免於液膜LF產生有破損之狀態下搬入至基板處理單元13A。即,可於穩定地維持液膜LF之狀態下移送基板S。再者,關於該態樣,於單獨實施之情形時亦可省略補充液噴嘴158。In this aspect, when the liquid film LF on the substrate S changes, the liquid film LF is formed in the
圖10係表示移送處理之第4態樣之流程圖。圖10中,對於與圖6所示之移送處理相同之內容亦標註相同符號而省略說明。該態樣中,步驟S201中由CCD相機351進行液膜之拍攝後,將其圖像與預先準備之理想圖像加以比較。即,求出所拍攝之圖像與理想圖像之差分(步驟S241)。所謂理想圖像係與基板S之上表面Sa由特定厚度之液膜LF均勻地覆蓋之理想狀態對應的圖像。Fig. 10 is a flowchart showing the fourth aspect of the transfer process. In FIG. 10, the same content as the transfer process shown in FIG. 6 is also denoted by the same reference numerals, and the description is omitted. In this aspect, after the liquid film is photographed by the
該處理係用以驗證基板S上是否形成有適當之液膜LF之處理。即,於濕式處理後之基板S,因作為處理之結果產生表面之凹凸或濕潤性之變化,故會產生難以形成均勻之液膜之情形。尤其若處理後之基板表面為具有撥液性之狀態,則難以擔載均勻之液膜。又,根據用以形成液膜之裝置構成之動作異常或基板S之保持態樣而亦會有最初便未形成適當之液膜之情形。藉由將液膜剛形成後之基板S之圖像與理想圖像加以比較而可立即偵測此種異常。又,亦可基於與理想圖像之差分之大小而調整用於液膜形成之液體供給量或基板S之旋轉速度。This process is used to verify whether an appropriate liquid film LF is formed on the substrate S. In other words, the substrate S after the wet processing has surface irregularities or changes in wettability as a result of the processing, so it is difficult to form a uniform liquid film. Especially if the surface of the substrate after processing is in a state with liquid repellency, it is difficult to support a uniform liquid film. In addition, depending on the abnormal operation of the device configuration for forming the liquid film or the holding state of the substrate S, there may be cases where a proper liquid film is not formed initially. Such an abnormality can be detected immediately by comparing the image of the substrate S just after the formation of the liquid film with the ideal image. In addition, the liquid supply amount for liquid film formation or the rotation speed of the substrate S may be adjusted based on the magnitude of the difference from the ideal image.
若所拍攝之圖像與理想圖像之間有顯著差異(步驟S242中是),則經過適當之錯誤處理(步驟S243)而中止移送處理。錯誤處理之內容為任意,例如考慮將異常產生報知給操作員,將此時之圖像進行顯示輸出等。較理想為,即便對偵測出異常之基板S中止處理,亦可繼續進行對無異常之基板之處理。If there is a significant difference between the captured image and the ideal image (Yes in step S242), the transfer process is terminated after proper error processing (step S243). The content of error handling is arbitrary. For example, consider reporting the occurrence of an abnormality to the operator and displaying the image at this time. Ideally, even if the processing of the abnormal substrate S is stopped, the processing of the non-abnormal substrate can be continued.
若未偵測出異常(步驟S242中否),則將所拍攝之圖像作為基準圖像而執行步驟S202以後之移送處理。此處設為執行第1態樣之移送處理,但亦可執行第2或第3態樣之處理。If no abnormality is detected (No in step S242), the captured image is used as the reference image and the transfer processing after step S202 is executed. Here, it is assumed that the transfer processing of the first aspect is executed, but the processing of the second or third aspect can also be executed.
又,上述各態樣之處理亦可適當組合。例如,亦可對由CCD相機157拍攝之圖像與基準圖像之差分之大小設定複數個基準量,使以後之處理根據差分之大小而變化。In addition, the above-mentioned various aspects of processing can also be appropriately combined. For example, it is also possible to set a plurality of reference quantities for the size of the difference between the image captured by the
於現實之基板處理中,根據後續之處理狀況等而可能有如下情形,即,自將基板S載置於處理腔室110且於其上表面Sa形成液膜LF起直至開始搬送基板S為止,要長時間待機。作為應對此種狀況之措施,例如亦可局部地變更圖10所示之處理,以如下方式實施。於自基板S上形成液膜LF起直至開始搬送之期間之互不相同之複數個時刻,藉由處理腔室110內之CCD相機351拍攝液膜LF。比較其等之圖像,於確認所拍攝之最新圖像與理想圖像或最初拍攝之圖像之間於液膜有顯著差異時,執行液體之補充或適當之錯誤處理(步驟S243)。In actual substrate processing, depending on the subsequent processing conditions, etc., there may be situations where the substrate S is placed in the
如此,於本實施形態之基板處理中,將自於基板S上形成液膜LF起直至結束搬送之期間之不同時刻所拍攝之複數個液膜之圖像加以比較,並根據其結果而決定以後之搬送動作。因此,可不延誤地偵測由搬送中之振動或揮發引起之液膜之變動,且根據狀況而變更搬送動作。以此方式,本實施形態中,能夠於表面穩定地形成有液膜之狀態下搬送基板。其結果,可防止由於搬送中之振動或液體之揮發等而導致基板表面之露出。In this way, in the substrate processing of this embodiment, the images of a plurality of liquid films taken at different times during the period from when the liquid film LF is formed on the substrate S to the end of the conveyance are compared, and the subsequent decisions are determined based on the results. The conveying action. Therefore, the change of the liquid film caused by the vibration or volatilization during transportation can be detected without delay, and the transportation action can be changed according to the situation. In this way, in this embodiment, the substrate can be conveyed in a state where a liquid film is stably formed on the surface. As a result, it is possible to prevent the surface of the substrate from being exposed due to vibration during transportation or volatilization of liquid.
如上所說明,上述實施形態中,濕式處理單元即基板處理單元11A等作為本發明之「第1處理部」發揮功能,乾燥處理單元即基板處理單元13A等作為本發明之「第2處理部」發揮功能。而且,中心機器人15作為本發明之「搬送機構」發揮功能。又,處理腔室110作為本發明之「處理腔室」發揮功能。As described above, in the above embodiment, the
又,上述實施形態中,手155作為本發明之「保持構件」發揮功能。而且,CCD相機157、351分別作為本發明之「第2相機」、「第1相機」發揮功能,其等構成本發明之「拍攝部」。又,補充液噴嘴158作為本發明之「液體供給機構」發揮功能。又,控制單元90作為本發明之「控制部」發揮功能。而且,於液膜剛形成後藉由相機351拍攝之液膜之圖像相當於本發明中之「搬送前圖像」。In addition, in the above-mentioned embodiment, the
再者,本發明並不限定於上述實施形態,可於不脫離其主旨之限度內進行除上述以外之各種變更。例如,上述實施形態係將與本發明之「第1處理部」、「第2處理部」、「搬送機構」分別相當之基板處理單元11A、基板處理單元13A、中心機器人15收納於1個殼體而構成一體之處理系統。然而,本發明對於具有彼此獨立地設置之第1處理部及第2處理部、以及於其等之間搬送基板之搬送機構之處理系統亦可應用。In addition, the present invention is not limited to the above-mentioned embodiments, and various modifications other than the above can be made within the limits not departing from the gist. For example, in the above-mentioned embodiment, the
又,上述實施形態中將由處理腔室110內之CCD相機351拍攝之液膜之圖像作為基準圖像,但基準圖像並不限定於此。例如,亦可將於搬送之初始階段由CCD相機157拍攝之圖像作為基準圖像。該情形時,於觀察搬送中之液膜之狀態之目的下無需處理腔室110內之CCD相機351。又,尤其若將CCD相機157以與手155一體移動之方式而構成,則於搬送中之各階段保持於手155之基板S與CCD相機157之位置關係不變。根據此種構成,於圖像間之比較中無需相互之位置對準,又可使差分算出之精度進一步提高。In addition, in the above-mentioned embodiment, the image of the liquid film taken by the
又,上述實施形態中,將CCD相機157安裝於在搬送基板S時與基板S一起移動之中心機器人15。亦可代替此,例如藉由固定地設置於將基板S之搬送路徑盡收眼底之位置之相機而拍攝所搬送之基板S。尤其對設置有微細圖案之基板S而言,為防止圖案坍塌,即便短時間亦不容許基板表面露出。因此,該情形時較佳為如下狀態,即,於搬送路徑上配置有複數個相機,且能夠以較短之時間間隔拍攝與基板S一起搬送之液膜。或者,亦可設置用以使相機追隨基板S之移動之機構。Furthermore, in the above-mentioned embodiment, the
又,於中心機器人15,亦可進而設置用以將自搬送中之基板S落下之液體接住回收之構成。In addition, the
以上,如例示具體之實施形態而說明,本發明可設為如下構成,例如,第1處理部於處理腔室內進行相對於基板之液膜形成,拍攝部具有設置於處理腔室內之第1相機。根據此種構成,能夠拍攝剛形成後之液膜,例如能夠以該圖像中包含之液膜為基準而評估以後之液膜之狀態。As described above, as an example of a specific embodiment, the present invention can be configured as follows. For example, the first processing section performs liquid film formation on the substrate in the processing chamber, and the imaging section has a first camera installed in the processing chamber . According to such a configuration, it is possible to photograph the liquid film immediately after formation, and for example, it is possible to evaluate the state of the liquid film thereafter based on the liquid film contained in the image.
又,例如,搬送機構亦可具有保持基板之保持構件,拍攝部亦可具有設置於搬送機構且與保持構件一起移動之第2相機。根據此種構成,於搬送中之各時刻可隨時拍攝,從而能夠不延誤地偵測基板上液膜之變化且採取必要之對策。In addition, for example, the transport mechanism may have a holding member that holds the substrate, and the imaging unit may have a second camera that is provided in the transport mechanism and moves together with the holding member. According to this structure, it is possible to take pictures at any time during transportation, so that changes in the liquid film on the substrate can be detected without delay and necessary countermeasures can be taken.
又,例如,控制部可於根據複數個圖像求出之差分超出預先設定之基準量之情形與未超出預先設定之基準量之情形之間,使自第1處理部至第2處理部之搬送所花費之時間不同。作為液膜變化之原因,有搬送中之振動或突然之加減速、液體成分之揮發等,且有藉由使搬送速度變化而能夠抑制液膜之變化之情形。In addition, for example, the control unit may set the difference between the first processing unit and the second processing unit between when the difference obtained from the plurality of images exceeds a preset reference amount and when it does not exceed the preset reference amount. The time taken for transportation is different. As the cause of the change of the liquid film, there are vibrations during transportation, sudden acceleration and deceleration, volatilization of liquid components, etc., and the change of the liquid film can be suppressed by changing the transportation speed.
又,例如,搬送機構具有對搬送之基板供給液體之液體供給機構,控制部可為如下構成,即,若根據複數個圖像求出之差分超出預先設定之基準量,則使液體供給機構對基板進行液體供給。根據此種構成,藉由視需要補充構成液膜之液體,可一面維持基板上之液膜,一面持續搬送。尤其於由揮發性較高之材料構成液膜之情形時,因搬送中之揮發而使液膜之厚度減少會成為基板表面露出之原因。藉由於搬送部設置補充液體之機構而能夠消除該問題。Also, for example, the transport mechanism has a liquid supply mechanism for supplying liquid to the substrate to be transported, and the control unit may be configured as follows: if the difference obtained from a plurality of images exceeds a preset reference amount, the liquid supply mechanism The substrate is supplied with liquid. According to this structure, by replenishing the liquid constituting the liquid film as needed, it is possible to maintain the liquid film on the substrate while continuing to transport. Especially when the liquid film is made of a material with higher volatility, the reduction in the thickness of the liquid film due to volatilization during transportation will cause the surface of the substrate to be exposed. This problem can be eliminated by providing a mechanism for replenishing liquid in the conveying part.
又,例如,控制部亦可構成為,若根據複數個圖像求出之差分超出預先設定之基準量,則搬送機構使基板返回至第1處理部,使第1處理部進行液膜之再形成。根據此種構成,於具備用以形成液膜所必要之構成之第1處理部進行液膜之再形成,故即便不另外設置用以於搬送中補充液體之構成,亦可防止搬送中液膜之破損。In addition, for example, the control unit may also be configured such that if the difference obtained from a plurality of images exceeds a preset reference amount, the transport mechanism returns the substrate to the first processing unit, and the first processing unit performs the liquid film reprocessing. form. According to this structure, the liquid film is re-formed in the first processing section equipped with the structure necessary to form the liquid film. Therefore, even if the structure for replenishing the liquid during transportation is not provided, it can prevent the liquid film from being transported. The damage.
又,例如,構成液膜之液體為有機溶劑,第2處理部亦可為對基板執行超臨界乾燥處理之構成。超臨界乾燥處理為了於高壓下實施而需專用之高壓環境。又,需要使用耐高壓之零件。因此,現實是於與能夠在常壓下實施之濕式處理不同之場所進行。此種情形時,需要進行濕式處理後之基板之搬送,藉由應用本發明,能夠在不使基板表面露出之情況下進行搬送。就與超臨界流體之親和性之觀點而言,較佳為使用有機溶劑進行液膜形成,但揮發性較高之有機溶劑於搬送中易損失。藉由本發明之應用而觀察液膜之狀態,由此於此種案例中亦能夠確實地以液膜覆蓋基板表面並進行搬送。In addition, for example, the liquid constituting the liquid film is an organic solvent, and the second processing unit may be configured to perform supercritical drying processing on the substrate. In order to perform supercritical drying under high pressure, a dedicated high-pressure environment is required. In addition, high-pressure resistant parts are required. Therefore, the reality is that it is performed in a place different from the wet process that can be performed under normal pressure. In this case, it is necessary to carry out the transfer of the substrate after wet processing. By applying the present invention, the transfer can be carried out without exposing the surface of the substrate. From the viewpoint of affinity with supercritical fluids, it is preferable to use organic solvents for liquid film formation, but organic solvents with higher volatility are easily lost during transportation. By observing the state of the liquid film by the application of the present invention, it is possible to reliably cover the surface of the substrate with the liquid film and carry it out in this case.
又,例如,複數個圖像亦可包含基板在由搬送機構開始搬送之前被拍攝到之搬送前圖像。根據此種構成,能夠把握於搬送開始時間點基板表面是否已被液膜適當地覆蓋,且能夠視狀況而採取必要之措施。例如控制部可基於與理想地擔載有液膜之狀態之基板對應之理想圖像與搬送前圖像之差,判斷是否開始搬送機構對基板之搬送。以此方式,能夠避免將表面未由液膜適當地覆蓋之狀態之基板供搬送。 [產業上之可利用性]In addition, for example, a plurality of images may include a pre-transport image taken before the substrate is transported by the transport mechanism. According to this configuration, it is possible to grasp whether the substrate surface is properly covered with the liquid film at the time of the start of the transportation, and it is possible to take necessary measures depending on the situation. For example, the control unit may determine whether to start the transfer of the substrate by the transfer mechanism based on the difference between the ideal image corresponding to the substrate in the state where the liquid film is ideally carried and the image before transfer. In this way, it is possible to avoid transporting the substrate whose surface is not properly covered by the liquid film. [Industrial availability]
本發明可應用於在將基板表面以液膜覆蓋之狀態下進行於執行互不相同之處理之處理部之間之基板之搬送的基板處理技術整體。例如,適宜於將濕式處理後之基板藉由超臨界乾燥處理而乾燥之處理。The present invention can be applied to the entire substrate processing technology in which the substrate is transported between processing sections that perform different processing in a state where the surface of the substrate is covered with a liquid film. For example, it is suitable for the process of drying the wet-processed substrate by supercritical drying process.
以上,按照特定之實施例說明了發明,但該說明並非意圖以限定性意義來解釋。若參照發明之說明,則與本發明之其他實施形態同樣地,所揭示之實施形態之各種變化例對於精通本領域技術者可明瞭。因此,認為隨附之申請專利範圍於不脫離發明之真正範圍之範圍內,包含該變化例或實施形態。Above, the invention has been described based on specific embodiments, but the description is not intended to be interpreted in a limited sense. If referring to the description of the invention, as with other embodiments of the present invention, various modifications of the disclosed embodiments will be clear to those skilled in the art. Therefore, it is considered that the scope of the attached patent application does not deviate from the true scope of the invention, and includes the modification or embodiment.
1:基板處理裝置 10:基板處理部 11A:濕式處理單元、基板處理單元(第1處理部) 11B:基板處理單元 12A:基板處理單元 13A:乾燥處理單元、基板處理單元(第2處理部) 13B:基板處理單元 14A:基板處理單元 15:中心機器人(搬送機構) 20:移載傳送部 21:容器保持部 22:移載傳送機器人 30:濕式處理部 31:基板保持部 32:防濺罩 33:處理液供給部 34:低表面張力液供給部 41:平台 42:旋轉支軸 43:高壓密封旋轉導入機構 44:流體分散構件 45:二氧化碳供給部 46:氮供給部 48:排出機構 90:控制單元(控制部) 91: CPU 92:記憶體 110:處理腔室(腔室) 111:擋板 120:處理腔室 121:擋板 130:高壓腔室 131:擋板 140:處理腔室 141:擋板 151:基台部 152:升降部 153:旋轉部 154:伸縮臂 155:手(保持構件) 156:支持構件 157: CCD相機(拍攝部、第2相機) 158:補充液噴嘴(液體供給機構) 221:基底部 222:多關節臂 223:手 311:旋轉夾盤 312:夾盤銷 313:旋轉支軸 314:旋轉機構 321:護罩 322:液體承接部 341:基底 342:旋動支軸 343:臂 344:噴嘴 351: CCD相機(拍攝部,第1相機) 352:照明光源 431:旋轉軸 432:旋轉機構 441:閉塞板 442:貫通孔 C:容器 LF:液膜 Lq:處理液 S:基板 Sa:上表面 S101:步驟 S102:步驟 S103:步驟 S104:步驟 S105:步驟 S106:步驟 S107:步驟 S108:步驟 S109:步驟 S110:步驟 S111:步驟 S121:步驟 S122:步驟 S123:步驟 S201:步驟 S202:步驟 S203:步驟 S204:步驟 S205:步驟 S206:步驟 S207:步驟 S208:步驟 S209:步驟 S221:步驟 S231:步驟 S241:步驟 S242:步驟 S243:步驟 TS:搬送空間1: Substrate processing equipment 10: Substrate Processing Department 11A: Wet processing unit, substrate processing unit (first processing section) 11B: Substrate processing unit 12A: Substrate processing unit 13A: Drying processing unit, substrate processing unit (second processing section) 13B: Substrate processing unit 14A: Substrate processing unit 15: Central robot (transfer mechanism) 20: Transfer and transfer department 21: Container holding part 22: Transfer robot 30: Wet treatment department 31: Board holding part 32: splash guard 33: Treatment liquid supply part 34: Low surface tension liquid supply part 41: Platform 42: Rotating fulcrum 43: High-pressure sealing rotary induction mechanism 44: fluid dispersion component 45: Carbon dioxide supply department 46: Nitrogen Supply Department 48: discharge mechanism 90: Control unit (control section) 91: CPU 92: memory 110: processing chamber (chamber) 111: bezel 120: processing chamber 121: bezel 130: high pressure chamber 131: Baffle 140: processing chamber 141: Baffle 151: Abutment 152: Lifting Department 153: Rotating part 154: Telescopic boom 155: Hand (holding member) 156: support member 157: CCD camera (photographing department, second camera) 158: Replenisher nozzle (liquid supply mechanism) 221: Base 222: Multi-joint arm 223: hand 311: Rotating Chuck 312: Chuck pin 313: Rotating Pivot 314: Rotating Mechanism 321: Guard 322: Liquid receiving part 341: Base 342: Rotating Pivot 343: arm 344: Nozzle 351: CCD camera (photographing department, the first camera) 352: Lighting source 431: Rotation Axis 432: Rotating Mechanism 441: occlusion plate 442: Through hole C: container LF: Liquid film Lq: Treatment liquid S: substrate Sa: upper surface S101: Step S102: Step S103: steps S104: Step S105: Step S106: Step S107: Step S108: Step S109: Step S110: Step S111: Step S121: Step S122: Step S123: Step S201: Step S202: Step S203: Step S204: Step S205: steps S206: Step S207: Step S208: Step S209: Step S221: Step S231: Step S241: Step S242: Step S243: Step TS: Transport space
圖1A係表示本發明之基板處理裝置之一實施形態之概略構成的圖。 圖1B係表示本發明之基板處理裝置之一實施形態之概略構成的圖。 圖2係表示中心機器人之構成及設置環境之圖。 圖3A係表示執行濕式處理之基板處理單元之圖。 圖3B係表示執行濕式處理之基板處理單元之圖。 圖4係表示執行超臨界乾燥處理之基板處理單元之圖。 圖5係表示該基板處理裝置之動作之流程圖。 圖6係表示移送處理之第1態樣之流程圖。 圖7係表示移送處理之第2態樣之流程圖。 圖8係表示移送處理之第3態樣之流程圖。 圖9係表示包含第3態樣之移送處理之基板處理動作之流程圖。 圖10係表示移送處理之第4態樣之流程圖。Fig. 1A is a diagram showing a schematic configuration of an embodiment of the substrate processing apparatus of the present invention. Fig. 1B is a diagram showing a schematic configuration of an embodiment of the substrate processing apparatus of the present invention. Figure 2 is a diagram showing the structure and installation environment of the central robot. Fig. 3A is a diagram showing a substrate processing unit that performs wet processing. FIG. 3B is a diagram showing a substrate processing unit performing wet processing. Fig. 4 is a diagram showing a substrate processing unit that performs supercritical drying processing. Fig. 5 is a flowchart showing the operation of the substrate processing apparatus. Fig. 6 is a flowchart showing the first aspect of the transfer process. Fig. 7 is a flowchart showing the second aspect of the transfer process. Fig. 8 is a flowchart showing the third aspect of the transfer process. FIG. 9 is a flowchart showing a substrate processing operation including the transfer processing of the third aspect. Fig. 10 is a flowchart showing the fourth aspect of the transfer process.
1:基板處理裝置 1: Substrate processing equipment
10:基板處理部 10: Substrate Processing Department
11A:基板處理單元 11A: Substrate processing unit
11B:基板處理單元 11B: Substrate processing unit
13A:基板處理單元 13A: Substrate processing unit
13B:基板處理單元 13B: Substrate processing unit
15:中心機器人 15: Center Robot
90:控制單元 90: control unit
91:CPU 91: CPU
92:記憶體 92: memory
101:間隔壁 101: next wall
110:處理腔室 110: processing chamber
111:擋板 111: bezel
130:高壓腔室 130: high pressure chamber
131:擋板 131: Baffle
151:基台部 151: Abutment
152:升降部 152: Lifting Department
153:旋轉部 153: Rotating part
154:伸縮臂 154: Telescopic boom
155:手 155: Hand
156:支持構件 156: support member
157:CCD相機 157: CCD camera
158:補充液噴嘴 158: Replenisher nozzle
S:基板 S: substrate
TS:搬送空間 TS: Transport space
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019058734A JP7261052B2 (en) | 2019-03-26 | 2019-03-26 | SUBSTRATE PROCESSING APPARATUS AND TRANSPORT CONTROL METHOD THEREOF |
JP2019-058734 | 2019-03-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202040637A true TW202040637A (en) | 2020-11-01 |
TWI756625B TWI756625B (en) | 2022-03-01 |
Family
ID=72608544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109103629A TWI756625B (en) | 2019-03-26 | 2020-02-06 | Substrate processing apparatus and conveyance control method thereof |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7261052B2 (en) |
KR (2) | KR102658643B1 (en) |
CN (1) | CN113557591A (en) |
TW (1) | TWI756625B (en) |
WO (1) | WO2020195175A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102553643B1 (en) | 2021-05-17 | 2023-07-13 | 세메스 주식회사 | Apparatus for treating substrate and robot for transferring substrate |
KR102640371B1 (en) * | 2021-09-03 | 2024-02-27 | 엘에스이 주식회사 | Substrate transfer apparatus |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4514700B2 (en) * | 2005-12-13 | 2010-07-28 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
JP5088335B2 (en) | 2009-02-04 | 2012-12-05 | 東京エレクトロン株式会社 | Substrate transfer apparatus and substrate processing system |
KR20120028672A (en) * | 2010-09-15 | 2012-03-23 | 삼성전자주식회사 | Substrate treatment apparatus and method using the same |
JP5575691B2 (en) * | 2011-04-06 | 2014-08-20 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM RECORDING PROGRAM FOR EXECUTING THE SUBSTRATE PROCESSING METHOD |
JP5661022B2 (en) * | 2011-11-21 | 2015-01-28 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and computer-readable storage medium storing substrate processing program |
JP6002112B2 (en) * | 2013-11-07 | 2016-10-05 | 東京エレクトロン株式会社 | Substrate defect analysis apparatus, substrate processing system, substrate defect analysis method, program, and computer storage medium |
JP6204879B2 (en) * | 2014-06-25 | 2017-09-27 | 株式会社Screenホールディングス | Substrate processing apparatus, jig, and teaching method |
JP6537992B2 (en) * | 2016-03-30 | 2019-07-03 | 東京エレクトロン株式会社 | Substrate processing apparatus, control method for substrate processing apparatus, and substrate processing system |
KR102063322B1 (en) * | 2016-05-27 | 2020-01-08 | 세메스 주식회사 | Apparatus and Method for treating a substrate |
JP2018036235A (en) * | 2016-09-02 | 2018-03-08 | 株式会社Screenホールディングス | Substrate checkup device, substrate processing device, substrate checkup method, and substrate processing method |
JP6842952B2 (en) * | 2017-02-28 | 2021-03-17 | 株式会社Screenホールディングス | Substrate processing equipment and substrate processing method |
JP6914062B2 (en) * | 2017-03-03 | 2021-08-04 | 東京エレクトロン株式会社 | Substrate processing equipment and substrate processing method |
CN110663101B (en) * | 2017-05-24 | 2023-08-18 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
JP6953286B2 (en) * | 2017-11-09 | 2021-10-27 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method and storage medium |
JP2020017618A (en) * | 2018-07-25 | 2020-01-30 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
-
2019
- 2019-03-26 JP JP2019058734A patent/JP7261052B2/en active Active
-
2020
- 2020-02-04 KR KR1020217029410A patent/KR102658643B1/en active IP Right Grant
- 2020-02-04 KR KR1020247005771A patent/KR20240027875A/en active Application Filing
- 2020-02-04 WO PCT/JP2020/004018 patent/WO2020195175A1/en active Application Filing
- 2020-02-04 CN CN202080020635.1A patent/CN113557591A/en active Pending
- 2020-02-06 TW TW109103629A patent/TWI756625B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2020195175A1 (en) | 2020-10-01 |
TWI756625B (en) | 2022-03-01 |
KR102658643B1 (en) | 2024-04-18 |
CN113557591A (en) | 2021-10-26 |
JP7261052B2 (en) | 2023-04-19 |
JP2020161609A (en) | 2020-10-01 |
KR20240027875A (en) | 2024-03-04 |
KR20210126693A (en) | 2021-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4535489B2 (en) | Coating / developing equipment | |
JP5841389B2 (en) | Substrate processing apparatus and substrate processing method | |
JP4194495B2 (en) | Coating / developing equipment | |
US8262300B2 (en) | Coating and developing apparatus, developing method and non-transitory medium | |
US20100285225A1 (en) | Substrate processing apparatus | |
TW202040637A (en) | Substrate processing apparatus and conveyance control method thereof | |
CN106206369B (en) | Teaching method and substrate processing apparatus using the teaching method | |
TWI393173B (en) | Developing apparatus, developing method and storage medium | |
US11501987B2 (en) | Loadlock module and semiconductor manufacturing apparatus including the same | |
JP2007142234A (en) | Method and apparatus for forming coating film | |
US7690853B2 (en) | Substrate processing apparatus | |
TWI742661B (en) | Substrate processing apparatus | |
JP2009032712A (en) | Substrate conveyance and processing apparatus | |
TW202402415A (en) | Substrate processing device and substrate processing method | |
JP7183094B2 (en) | Substrate processing method and substrate processing apparatus | |
JP4872448B2 (en) | Coating, developing device, coating, developing method and storage medium. | |
JP5579991B2 (en) | Substrate processing apparatus and substrate processing method | |
KR20160021405A (en) | Apparatus and Method for treating substrate | |
KR102259065B1 (en) | Apparatus and Method for treating substrate | |
JP2024034960A (en) | Substrate drying equipment, substrate processing equipment, and substrate drying method | |
TW202240742A (en) | Substrate drying apparatus and substrate processing apparatus | |
KR20230010110A (en) | Apparatus for treating substrate and method for processing a substrate |