TW202040637A - Substrate processing apparatus and conveyance control method thereof - Google Patents

Substrate processing apparatus and conveyance control method thereof Download PDF

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TW202040637A
TW202040637A TW109103629A TW109103629A TW202040637A TW 202040637 A TW202040637 A TW 202040637A TW 109103629 A TW109103629 A TW 109103629A TW 109103629 A TW109103629 A TW 109103629A TW 202040637 A TW202040637 A TW 202040637A
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substrate
processing
liquid
liquid film
processing unit
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TWI756625B (en
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河原啓之
橋本光治
菊本憲幸
墨周武
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00Manipulators not otherwise provided for
    • B25J11/0095Manipulators transporting wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J19/00Accessories fitted to manipulators, e.g. for monitoring, for viewing; Safety devices combined with or specially adapted for use in connection with manipulators
    • B25J19/02Sensing devices
    • B25J19/021Optical sensing devices
    • B25J19/023Optical sensing devices including video camera means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25JMANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J9/00Programme-controlled manipulators
    • B25J9/16Programme controls
    • B25J9/1679Programme controls characterised by the tasks executed
    • B25J9/1692Calibration of manipulator
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract

A substrate processing device 1 which transfers a substrate with a substrate surface coated with a liquid film is provided with: a first processing unit 11A which, in order to prevent exposure of the substrate surface due to vibrations, evaporation of liquid and the like during transfer, supplies a liquid to the substrate S and coats the substrate surface with a liquid film; a transfer mechanism 15 which transfers the substrate carrying the liquid film; a second processing unit 13A which receives the substrate transferred by the transfer mechanism and performs a predetermined process; an image capture unit 157 which captures an image of the liquid film formed on the substrate surface; and a control unit 90 which controls the operation of the transfer mechanism on the basis of a difference between a plurality of images captured by the image capture unit at mutually different times between when the liquid film was formed and when the substrate is loaded into the second processing unit by the transfer mechanism.

Description

基板處理裝置及其搬送控制方法Substrate processing device and its transport control method

本發明係關於一種於複數個處理部之間搬送基板之基板處理裝置,尤其係關於在基板表面形成有液膜之狀態下之搬送之控制。The present invention relates to a substrate processing apparatus that transports a substrate between a plurality of processing units, and particularly relates to the control of the transportation in a state where a liquid film is formed on the surface of the substrate.

於半導體基板或顯示面板用玻璃基板等基板之製造製程中,為了分別由個別之處理部執行不同之處理,需要於複數個處理部之間進行基板之搬送。該情形時,需要預先防止以下問題,即,由於搬送中基板表面之露出而導致之表面氧化,或搬送路徑上之懸浮物附著於基板表面,進而形成於基板之微細圖案之坍塌等。因此,有將基板之表面以液膜覆蓋之狀態進行搬送之案例。In the manufacturing process of substrates such as semiconductor substrates or glass substrates for display panels, in order to perform different processes by individual processing units, it is necessary to transport the substrates between a plurality of processing units. In this case, it is necessary to prevent the following problems in advance, that is, surface oxidation due to exposure of the substrate surface during transport, or suspension of suspended matter on the transport path adhering to the substrate surface, and the collapse of the fine pattern formed on the substrate. Therefore, there are cases where the surface of the substrate is covered with a liquid film for transportation.

例如,於日本專利特開2010-182817號公報(專利文獻1)中記載之先前技術中,於分別藉由液體處理基板之處理系統間之搬送中,基板以浸漬於搬送托盤中所蓄積之液體中之狀態、或以上表面整體充滿液體之狀態進行搬送。For example, in the prior art described in Japanese Patent Laid-Open No. 2010-182817 (Patent Document 1), in the transfer between processing systems that process substrates by liquids, the substrates are immersed in the liquid accumulated in the transfer tray. It is transported in a state in which the entire surface is filled with liquid.

[發明所欲解決之問題][The problem to be solved by the invention]

於基板之搬送中,由於搬送路徑上之加減速或振動、又液體因揮發引起之減少等而可能導致於搬送中基板表面之一部分露出於周圍環境中。此現象成為製品不良之原因。尤其對形成有微細圖案之基板而言,表面露出會立即引起圖案坍塌,故即便為短時間亦不容許。During the transfer of the substrate, due to acceleration, deceleration or vibration on the transfer path, and reduction of liquid due to volatilization, a part of the substrate surface may be exposed to the surrounding environment during the transfer. This phenomenon becomes the cause of defective products. Especially for a substrate with a fine pattern, the surface exposure will cause the pattern to collapse immediately, so even a short time is not allowed.

上述先前技術中,由於將基板收容於搬送托盤中,故可期待某種程度穩定之搬送,但尚不具有防止由於如上所述之振動、液體之揮發等而導致之暫時性的基板表面之露出的功能。In the above-mentioned prior art, since the substrate is contained in the transfer tray, a certain degree of stable transfer can be expected, but it does not yet prevent the temporary exposure of the substrate surface due to the above-mentioned vibration, volatilization of liquid, etc. Function.

本發明係鑒於上述問題而完成,其目的在於提供一種技術,於將基板表面以液膜覆蓋之狀態下搬送基板之基板處理裝置中,可防止由於搬送中之振動或液體之揮發等而導致基板表面之露出。 [解決問題之技術手段]The present invention has been completed in view of the above-mentioned problems, and its purpose is to provide a technique for preventing the substrate from being caused by vibration during transportation or volatilization of liquid in a substrate processing apparatus that transports the substrate while the substrate surface is covered with a liquid film. The surface is exposed. [Technical means to solve the problem]

為達成上述目的,本發明之基板處理裝置之一態樣具備:第1處理部,其將液體供給至基板且以液膜覆蓋上述基板之表面;搬送機構,其搬送擔載上述液膜之上述基板;第2處理部,其接收藉由上述搬送機構搬送之上述基板且執行特定之處理;拍攝部,其拍攝形成於上述基板之表面之上述液膜;及控制部,其基於在自形成上述液膜起直至藉由上述搬送機構將上述基板搬入上述第2處理部之期間之互不相同的時刻分別由上述拍攝部所拍攝之複數個圖像之差,而控制上述搬送機構之動作。In order to achieve the above-mentioned object, one aspect of the substrate processing apparatus of the present invention includes: a first processing section that supplies a liquid to a substrate and covers the surface of the substrate with a liquid film; and a transport mechanism that transports the liquid film carrying the liquid film. Substrate; a second processing section, which receives the substrate transported by the transport mechanism and performs specific processing; an imaging section, which photographs the liquid film formed on the surface of the substrate; and a control section, which is based on the self-forming The operation of the transport mechanism is controlled by the difference between the plurality of images taken by the imaging section from the liquid film until the time when the substrate is transported into the second processing section by the transport mechanism.

又,本發明之另一態樣係一種基板處理裝置之搬送控制方法,該基板處理裝置具有:第1處理部,其將液體供給至基板且以液膜覆蓋上述基板之表面;第2處理部,其接收擔載上述液膜之上述基板且執行特定之處理;及搬送機構,其於上述第1處理部與上述第2處理部之間搬送上述基板;為達成上述目的,該基板處理裝置之搬送控制方法係於自形成上述液膜起直至將上述基板搬入上述第2處理部之期間之互不相同的時刻分別拍攝上述液膜,且基於所拍攝之複數個圖像之差,而控制上述搬送機構之動作。In addition, another aspect of the present invention is a method for controlling the conveyance of a substrate processing apparatus, the substrate processing apparatus having: a first processing section that supplies liquid to a substrate and covers the surface of the substrate with a liquid film; and a second processing section , Which receives the above-mentioned substrate carrying the above-mentioned liquid film and performs specific processing; and a transport mechanism which transports the above-mentioned substrate between the above-mentioned first processing section and the above-mentioned second processing section; in order to achieve the above-mentioned object, the substrate processing apparatus The conveyance control method is to photograph the liquid film at different times from the formation of the liquid film until the time when the substrate is transferred into the second processing unit, and to control the liquid film based on the difference between the plural images taken. The movement of the transport mechanism.

如此構成之發明中,拍攝搬送中之基板表面之液膜,且基於不同時刻所拍攝之圖像間之差而控制搬送機構之動作。因此,能夠偵測基板表面之液膜狀態之變化,並使其反映於搬送控制中。例如,能夠為了減少振動而抑制搬送速度,或若液膜之厚度降低則補充液體。藉此,可於以液膜覆蓋基板表面之狀態下穩定地搬送,從而可防止基板表面露出。 [發明之效果]In the invention thus constituted, the liquid film on the surface of the substrate being transported is photographed, and the action of the transport mechanism is controlled based on the difference between the images taken at different times. Therefore, the change in the state of the liquid film on the surface of the substrate can be detected and reflected in the transport control. For example, it is possible to suppress the conveying speed in order to reduce vibration, or to replenish the liquid if the thickness of the liquid film decreases. Thereby, the substrate surface can be stably conveyed in the state where the liquid film covers the substrate surface, and the substrate surface can be prevented from being exposed. [Effects of Invention]

如上所述,根據本發明,拍攝搬送中之基板表面之液膜並使其變化反映於搬送控制中,故能夠於使基板表面之液膜穩定之狀態下搬送基板。藉此,可防止由於搬送中之振動或液體之揮發等而導致之基板表面露出。As described above, according to the present invention, the liquid film on the substrate surface during transport is photographed and the change is reflected in the transport control, so that the substrate can be transported in a state where the liquid film on the substrate surface is stabilized. This prevents the surface of the substrate from being exposed due to vibration during transportation or volatilization of liquid.

本發明之上述以及其他目的與新穎之特徵只要參照隨附圖式並能閱讀以下詳細之說明,則可更完全地明瞭。但是,圖式係專門用於解說者,並非限定本發明之範圍者。The above-mentioned and other objects and novel features of the present invention can be more fully understood as long as they refer to the accompanying drawings and can read the following detailed description. However, the drawings are used exclusively for illustration and do not limit the scope of the present invention.

圖1A及圖1B係表示本發明之基板處理裝置之一實施形態之概略構成的圖。更具體而言,圖1A係表示本發明之一實施形態之基板處理裝置1之俯視圖,圖1B係表示基板處理裝置1之側視圖。再者,該等圖並非表示裝置之外觀,而是藉由將裝置之外壁面板或其他一部分構成除外而容易理解地表示其內部構造之模式圖。該基板處理裝置1例如係設置於無塵室內,且用以對基板實施特定之處理之裝置。1A and 1B are diagrams showing a schematic configuration of an embodiment of the substrate processing apparatus of the present invention. More specifically, FIG. 1A is a plan view of the substrate processing apparatus 1 according to an embodiment of the present invention, and FIG. 1B is a side view of the substrate processing apparatus 1. Furthermore, these drawings do not show the appearance of the device, but are schematic diagrams that easily show the internal structure of the device by excluding the external wall panel or other parts of the device. The substrate processing device 1 is, for example, a device that is installed in a clean room and used to perform specific processing on a substrate.

此處,作為本實施形態之「基板」,能夠應用半導體基板、光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display,場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板等各種基板。以下,主要以用於半導體基板之處理之基板處理裝置為例而參照圖式進行說明。然而,對於以上例示之各種基板之處理亦可同樣地應用。Here, as the "substrate" of the present embodiment, semiconductor substrates, glass substrates for photomasks, glass substrates for liquid crystal display, glass substrates for plasma display, substrates for FED (Field Emission Display), optical discs can be applied. Various substrates such as substrates, substrates for magnetic disks, and substrates for optical magnetic disks. Hereinafter, a substrate processing apparatus used for processing semiconductor substrates will be mainly used as an example for description with reference to the drawings. However, the treatments for the various substrates exemplified above can also be similarly applied.

如圖1A所示,基板處理裝置1具備對基板S實施處理之基板處理部10、及與該基板處理部10結合之移載傳送部20。移載傳送部20具備容器保持部21與移載傳送機器人22。移載傳送部20可保持複數個用以收容基板S之容器C。作為容器C,可使用以密閉之狀態收容複數片基板S之FOUP(Front Opening Unified Pod,前開式晶圓盒)、SMIF(Standard Mechanical Interface,標準機械界面)箱、OC(Open Cassette,開放式晶匣)等。移載傳送機器人22進出保持於容器保持部21之容器C,自容器C取出未處理之基板S,或將處理過的基板收納於容器C。於各容器C中,以大致水平之姿勢收容有複數片基板S。As shown in FIG. 1A, the substrate processing apparatus 1 includes a substrate processing section 10 that performs processing on a substrate S, and a transfer and transfer section 20 coupled to the substrate processing section 10. The transfer and transfer unit 20 includes a container holding unit 21 and a transfer and transfer robot 22. The transfer conveyor 20 can hold a plurality of containers C for storing the substrate S. As the container C, FOUP (Front Opening Unified Pod), SMIF (Standard Mechanical Interface) box, OC (Open Cassette, open crystal box) that contain multiple substrates S in a sealed state can be used. Box) etc. The transfer robot 22 enters and exits the container C held in the container holding portion 21, takes out the unprocessed substrate S from the container C, or stores the processed substrate in the container C. In each container C, a plurality of substrates S are stored in a substantially horizontal posture.

移載傳送機器人22具備基底部221、多關節臂222、及手223。基底部221固定於裝置殼體。多關節臂222設置成能夠相對於基底部221繞鉛垂軸旋動。於多關節臂222之前端,安裝有手223。手223成為可於其上表面載置並保持基板S之構造。此種具有多關節臂及基板保持用手之移載傳送機器人已眾所周知,故省略詳細之說明。The transfer robot 22 includes a base portion 221, a multi-joint arm 222, and a hand 223. The base portion 221 is fixed to the device casing. The multi-joint arm 222 is provided to be able to rotate about a vertical axis with respect to the base portion 221. At the front end of the multi-joint arm 222, a hand 223 is installed. The hand 223 has a structure capable of placing and holding the substrate S on its upper surface. Such transfer robots with multi-joint arms and substrate holding hands are well known, so detailed descriptions are omitted.

基板處理部10具備:中心機器人15,其配置於俯視下之大致中央;及複數個基板處理單元,其等以包圍該中心機器人15之方式配置。具體而言,面向配置有中心機器人15之空間而配置複數個(該例中為4個)基板處理單元11A、12A、13A、14A。該等基板處理單元11A~14A係分別對基板S執行特定之處理者。於將該等處理單元設為相同功能者之情形時,能夠進行複數片基板之平行處理。又,亦可構成為將功能不同之處理單元組合而對1片基板依序執行不同之處理。The substrate processing unit 10 includes a center robot 15 which is arranged approximately in the center in a plan view, and a plurality of substrate processing units which are arranged so as to surround the center robot 15. Specifically, a plurality of (four in this example) substrate processing units 11A, 12A, 13A, and 14A are arranged facing the space in which the center robot 15 is arranged. The substrate processing units 11A-14A are those that perform specific processing on the substrate S, respectively. When the processing units have the same function, parallel processing of a plurality of substrates can be performed. In addition, it may be configured to combine processing units with different functions to sequentially perform different processing on one substrate.

如下所述,本實施形態之基板處理裝置1用於將基板S藉由特定之處理液進行濕式處理之後,使基板S乾燥之一連串之處理。為了該目的,4個基板處理單元中之2個基板處理單元11A、12A負責對基板S之濕式處理,並於內部具備用以能夠進行該處理之構成。又,其他2個基板處理單元13A、14A負責自濕式處理後之基板S去除殘存液且使基板S乾燥之處理(乾燥處理),並於內部具備用以能夠進行該處理之構成。As described below, the substrate processing apparatus 1 of this embodiment is used for a series of processing of drying the substrate S after subjecting the substrate S to wet processing with a specific processing liquid. For this purpose, two substrate processing units 11A and 12A among the four substrate processing units are responsible for the wet processing of the substrate S, and are provided with a structure to be able to perform the processing inside. In addition, the other two substrate processing units 13A and 14A are responsible for the process of removing residual liquid from the substrate S after the wet process and drying the substrate S (drying process), and are provided with a structure for performing the process inside.

各基板處理單元11A~14A中,執行對基板S之處理之基板處理主體收容於在面向中心機器人15之側面設置有開閉自如之擋板之處理腔室內。即,基板處理單元11A具有處理腔室110、及設置於處理腔室110中之面向中心機器人15之側面之擋板111。擋板111設置成覆蓋設置於處理腔室110之面向中心機器人15之側面之開口部(未圖示)。若擋板111打開則開口部露出,能夠經由該開口部進行基板S之搬入及搬出。又,於處理腔室110內執行對基板S之處理時,藉由關閉擋板111而將處理腔室110內之環境自外部阻隔。In each of the substrate processing units 11A to 14A, the substrate processing main body that executes the processing of the substrate S is contained in a processing chamber provided with a baffle that can be opened and closed on the side facing the center robot 15. That is, the substrate processing unit 11A has a processing chamber 110 and a baffle 111 disposed in the processing chamber 110 facing the side of the center robot 15. The baffle 111 is provided to cover an opening (not shown) provided on the side of the processing chamber 110 facing the central robot 15. When the shutter 111 is opened, the opening is exposed, and the substrate S can be carried in and out through the opening. In addition, when the substrate S is processed in the processing chamber 110, the baffle 111 is closed to block the environment in the processing chamber 110 from the outside.

同樣地,基板處理單元12A具有處理腔室120、及設置於處理腔室120中之面向中心機器人15之側面之擋板121。又,基板處理單元13A具有處理腔室130、及設置於處理腔室130中之面向中心機器人15之側面之擋板131。又,基板處理單元14A具有處理腔室140、及設置於處理腔室140中之面向中心機器人15之側面之擋板141。Similarly, the substrate processing unit 12A has a processing chamber 120 and a baffle 121 disposed in the processing chamber 120 facing the side of the central robot 15. In addition, the substrate processing unit 13A has a processing chamber 130 and a baffle 131 disposed in the processing chamber 130 facing the side of the center robot 15. In addition, the substrate processing unit 14A has a processing chamber 140 and a baffle plate 141 disposed in the processing chamber 140 facing the side of the center robot 15.

而且,如此配置於水平方向之基板處理單元之組件於上下方向上配置複數段(本例中為2段)。即,如圖1B所示,於基板處理單元11A之下方設置有基板處理單元11B。基板處理單元11B之構成及功能與基板處理單元11A相同。又,於基板處理單元12A之下方,設置有與基板處理單元12A相同之構成、相同之功能之基板處理單元12B。同樣地,於基板處理單元13A之下部亦設置有基板處理單元13B(圖2),又,於基板處理單元14A之下部亦設置有未圖示之基板處理單元。再者,基板處理單元之段數為任意,並不限定於此處例示之2個。又,每1段之基板處理單元之配設數量亦並不限定於以上所述。Furthermore, the components of the substrate processing unit arranged in the horizontal direction are arranged in a plurality of stages (two stages in this example) in the vertical direction. That is, as shown in FIG. 1B, a substrate processing unit 11B is provided below the substrate processing unit 11A. The structure and function of the substrate processing unit 11B are the same as those of the substrate processing unit 11A. Moreover, under the substrate processing unit 12A, a substrate processing unit 12B having the same structure and the same function as the substrate processing unit 12A is provided. Similarly, a substrate processing unit 13B (FIG. 2) is also provided under the substrate processing unit 13A, and a substrate processing unit (not shown) is also provided under the substrate processing unit 14A. In addition, the number of stages of the substrate processing unit is arbitrary, and is not limited to the two illustrated here. In addition, the number of substrate processing units per stage is not limited to the above.

圖2係表示中心機器人之構成及設置環境之圖。中心機器人15可自移載傳送機器人22接收未處理之基板S,且可將處理過的基板S移交給移載傳送機器人22。更具體而言,中心機器人15具備基台部151、升降部152、旋轉部153、伸縮臂154、及手155。基台部151固定於基板處理部10之底部框架,且支持中心機器人15之各構成。升降部152安裝於基台部151,且於升降部152之上部安裝有旋轉部153。升降部152於鉛垂方向上伸縮自如,且藉由該伸縮運動而使旋轉部153升降。Figure 2 is a diagram showing the structure and installation environment of the central robot. The central robot 15 can receive the unprocessed substrate S from the transfer robot 22 and can transfer the processed substrate S to the transfer robot 22. More specifically, the center robot 15 includes a base portion 151, an elevating portion 152, a rotating portion 153, a telescopic arm 154, and a hand 155. The base part 151 is fixed to the bottom frame of the substrate processing part 10 and supports various components of the central robot 15. The lifting part 152 is installed on the base part 151, and a rotating part 153 is installed on the upper part of the lifting part 152. The lifting part 152 is free to expand and contract in the vertical direction, and the rotating part 153 is raised and lowered by the expansion and contraction movement.

旋轉部153能夠相對於升降部152繞鉛垂軸旋動。於旋轉部153安裝有伸縮臂154之基部,於伸縮臂154之前端部安裝有手155。伸縮臂154沿水平方向於特定之範圍伸縮。手155為如下構造,即,可於其上表面載置並保持基板S,而且能夠與移載傳送機器人22之手223之間交接基板S。此種構造之手之機構已眾所周知,故省略詳細之說明。The rotating part 153 can rotate about a vertical axis with respect to the lifting part 152. The base of the telescopic arm 154 is mounted on the rotating part 153, and the hand 155 is mounted on the front end of the telescopic arm 154. The telescopic arm 154 expands and contracts in a specific range in the horizontal direction. The hand 155 has a structure in which the substrate S can be placed and held on the upper surface thereof, and the substrate S can be transferred to and from the hand 223 of the transfer robot 22. The mechanism of this structure is well known, so detailed description is omitted.

藉由伸縮臂154沿水平方向伸縮,而可使保持於手155之基板S沿水平方向移動。又,藉由旋轉部153相對於升降部152旋動,而可規定基板S之水平移動之方向。又,藉由升降部152使旋轉部153升降,而可調整基板S之高度,即鉛垂方向位置。By extending and contracting the telescopic arm 154 in the horizontal direction, the substrate S held by the hand 155 can be moved in the horizontal direction. In addition, by rotating the rotating part 153 relative to the lifting part 152, the horizontal movement direction of the substrate S can be specified. In addition, the height of the substrate S, that is, the position in the vertical direction, can be adjusted by lifting the rotating part 153 by the lifting part 152.

於旋轉部153,安裝有朝上延伸之支持構件156。支持構件156以不與手155之伸縮干涉之方式,安裝於旋轉部153側面之與伸縮臂154之伸長方向相反側。於支持構件156之上端安裝有CCD相機157。CCD相機157之光軸方向朝向自水平方向起之稍許下方,自斜上方俯視保持於手155之基板S且使其落入拍攝視野。藉此,可拍攝基板S之上表面。拍攝資料被發送至控制單元90。The rotating part 153 is provided with a supporting member 156 extending upward. The supporting member 156 is installed on the side of the rotating part 153 opposite to the extension direction of the telescopic arm 154 so as not to interfere with the expansion and contraction of the hand 155. A CCD camera 157 is installed on the upper end of the supporting member 156. The optical axis direction of the CCD camera 157 faces slightly downward from the horizontal direction, and the substrate S held by the hand 155 is viewed from obliquely upward and falls into the shooting field of view. Thereby, the upper surface of the substrate S can be photographed. The shooting data is sent to the control unit 90.

又,於旋轉部153設置有補充液噴嘴158。補充液噴嘴158於保持於手155之基板S之上方朝下開口。補充液噴嘴158連接於未圖示之低表面張力液供給部(下述),且視需要將自低表面張力液供給部供給之低表面張力液供給至基板S。In addition, a replenishing liquid nozzle 158 is provided in the rotating part 153. The replenishing liquid nozzle 158 opens upwardly and downward from the substrate S held by the hand 155. The replenishing liquid nozzle 158 is connected to a low surface tension liquid supply part (described below) not shown, and supplies the low surface tension liquid supplied from the low surface tension liquid supply part to the substrate S as necessary.

如上所述構成之基板處理裝置1中,以如下方式執行對基板S之處理。於初始狀態下,於載置在容器保持部21之容器C中收容有未處理之基板S。移載傳送機器人22自容器C取出1片未處理基板S且移交給中心機器人15。中心機器人15將所接收之基板S搬入至要執行對該基板S之處理之基板處理單元。In the substrate processing apparatus 1 configured as described above, the processing of the substrate S is performed as follows. In the initial state, the unprocessed substrate S is contained in the container C placed on the container holding portion 21. The transfer robot 22 takes out one unprocessed substrate S from the container C and transfers it to the center robot 15. The central robot 15 carries the received substrate S into a substrate processing unit that is to perform processing on the substrate S.

例如將基板S搬入至基板處理單元11A之情形時,如圖2所示,中心機器人15藉由升降部152而調整旋轉部153之高度,將保持於手155之基板S定位於基板處理單元11A之處理腔室110側面之擋板111之高度。打開擋板111,伸縮臂154朝處理腔室110側面之開口部伸長,藉此將基板S搬入至處理腔室110。於伸縮臂154退避後,關閉擋板111,於處理腔室110內執行對基板S之處理。基板S相對於其他基板處理單元之搬入亦可以相同之方式進行。For example, when the substrate S is loaded into the substrate processing unit 11A, as shown in FIG. 2, the center robot 15 adjusts the height of the rotating part 153 by the lifter 152, and positions the substrate S held by the hand 155 in the substrate processing unit 11A The height of the baffle 111 on the side of the processing chamber 110. When the baffle 111 is opened, the telescopic arm 154 extends toward the opening on the side of the processing chamber 110, thereby carrying the substrate S into the processing chamber 110. After the telescopic arm 154 retreats, the baffle 111 is closed, and the substrate S is processed in the processing chamber 110. The loading of the substrate S with respect to other substrate processing units can also be performed in the same manner.

另一方面,於自基板處理單元11A取出處理過的基板S時,伸縮臂154進入至已打開擋板111之處理腔室110且取出處理過的基板S。對所取出之基板S,可搬入至其他基板處理單元而執行新的處理,又亦可經由移載傳送機器人22而返回至容器C。關於本實施形態之具體的處理順序將於以下詳細說明。On the other hand, when taking out the processed substrate S from the substrate processing unit 11A, the telescopic arm 154 enters the processing chamber 110 where the shutter 111 has been opened, and the processed substrate S is taken out. The taken-out substrate S can be carried into another substrate processing unit to perform a new process, and it can also be returned to the container C via the transfer robot 22. The specific processing procedure of this embodiment will be described in detail below.

如圖2所示,中心機器人15設置於側方及上方藉由間隔壁101而與外部空間隔開之搬送空間TS。基板處理單元11A將處理腔室110之設置有擋板111之側面面向搬送空間TS而安裝於間隔壁101之側部。其他基板處理單元亦相同。As shown in FIG. 2, the center robot 15 is installed in the conveying space TS separated from the outside space by the partition wall 101 on the side and above. The substrate processing unit 11A is installed on the side of the partition wall 101 with the side surface of the processing chamber 110 provided with the baffle plate 111 facing the transport space TS. The same applies to other substrate processing units.

除以上所述之外,於基板處理裝置1中,設置有用以控制裝置各部之動作之控制單元90。控制單元90至少包含CPU(Central Processing Unit,中央處理單元)91、及記憶體92。CPU91藉由執行預先準備之控制程式而使裝置各部執行特定之動作。又,記憶體92記憶CPU91應執行之控制程式、或藉由該執行而產生之資料等。與上述移載傳送機器人22及中心機器人15之動作、各處理腔室中之擋板之開閉或對基板S之各種處理等相關的動作由執行控制程式之CPU91來控制。In addition to the above, the substrate processing apparatus 1 is provided with a control unit 90 for controlling the operation of each part of the apparatus. The control unit 90 at least includes a CPU (Central Processing Unit, central processing unit) 91 and a memory 92. The CPU 91 executes a pre-prepared control program to cause each part of the device to perform specific actions. In addition, the memory 92 stores the control program to be executed by the CPU 91, or the data generated by the execution. The actions related to the movement of the transfer robot 22 and the center robot 15 described above, the opening and closing of the baffle in each processing chamber, or the various processing of the substrate S, etc. are controlled by the CPU 91 executing the control program.

圖3A及圖3B係表示執行濕式處理之基板處理單元之圖。更具體而言,圖3A係表示基板處理單元11A之構成之圖,圖3B係用以說明基板處理單元11A之動作之圖。此處,對基板處理單元11A之構成進行說明,執行濕式處理之其他基板處理單元11B、12A等之構成亦基本相同。3A and 3B are diagrams showing a substrate processing unit performing wet processing. More specifically, FIG. 3A is a diagram showing the configuration of the substrate processing unit 11A, and FIG. 3B is a diagram for explaining the operation of the substrate processing unit 11A. Here, the structure of the substrate processing unit 11A will be described, and the structures of the other substrate processing units 11B, 12A, etc. that perform wet processing are also basically the same.

基板處理單元11A於處理腔室110內具備作為基板處理主體之濕式處理部30。濕式處理部30將處理液供給至基板S之上表面而進行基板S之表面處理或洗淨等。又,為了防止於濕式處理後搬出之基板S之上表面於周圍環境中露出,濕式處理部30一併執行將濕式處理後之基板S之上表面以低表面張力液之液膜覆蓋之液膜形成處理。The substrate processing unit 11A includes a wet processing unit 30 as a substrate processing main body in the processing chamber 110. The wet processing unit 30 supplies the processing liquid to the upper surface of the substrate S to perform surface treatment or cleaning of the substrate S. In addition, in order to prevent the upper surface of the substrate S carried out after the wet processing from being exposed to the surrounding environment, the wet processing section 30 also performs the process of covering the upper surface of the substrate S after the wet processing with a liquid film of a low surface tension liquid The liquid film formation treatment.

為了該目的,濕式處理部30具備基板保持部31、防濺罩32、處理液供給部33及低表面張力液供給部34。其等之動作由控制單元90控制。基板保持部31具有圓板狀之旋轉夾盤311,該旋轉夾盤311具有與基板S大致相等之直徑,於旋轉夾盤311之周緣部設置有複數個夾盤銷312。夾盤銷312抵接於基板S之周緣部而支持基板S,藉此,旋轉夾盤311能以自基板S之上表面離開之狀態將基板S保持為水平姿勢。For this purpose, the wet processing section 30 includes a substrate holding section 31, a splash cover 32, a processing liquid supply section 33, and a low surface tension liquid supply section 34. Their actions are controlled by the control unit 90. The substrate holding portion 31 has a disk-shaped rotating chuck 311 having a diameter approximately equal to that of the substrate S, and a plurality of chuck pins 312 are provided on the peripheral edge of the rotating chuck 311. The chuck pin 312 abuts against the peripheral edge of the substrate S and supports the substrate S, whereby the rotating chuck 311 can maintain the substrate S in a horizontal posture while being separated from the upper surface of the substrate S.

旋轉夾盤311藉由自其下表面中央部朝下延伸之旋轉支軸313而以上表面成水平之方式被支持。旋轉支軸313藉由安裝於處理腔室110之底部之旋轉機構314而旋轉自如地被支持。旋轉機構314內置有未圖示之旋轉馬達,旋轉馬達根據來自控制單元90之控制指令而旋轉,藉此與旋轉支軸313直接連結之旋轉夾盤311繞以單點鏈線表示之鉛垂軸旋轉。圖3A及圖3B中,上下方向為鉛垂方向。藉此,基板S維持水平姿勢地繞鉛垂軸旋轉。The rotating chuck 311 is supported by a rotating support shaft 313 extending downward from the center of the lower surface, and the upper surface is horizontal. The rotating support shaft 313 is rotatably supported by a rotating mechanism 314 installed at the bottom of the processing chamber 110. The rotating mechanism 314 is equipped with a rotating motor not shown in the figure. The rotating motor rotates according to a control command from the control unit 90, whereby the rotating chuck 311 directly connected to the rotating support shaft 313 is wound around a vertical axis represented by a single-dot chain line Spin. In FIGS. 3A and 3B, the up-down direction is the vertical direction. Thereby, the substrate S rotates around the vertical axis while maintaining the horizontal posture.

以自側方包圍基板保持部31之方式設置防濺罩32。防濺罩32具有以覆蓋旋轉夾盤311之周緣部之方式設置之大致筒狀之護罩321、及設置於護罩321之外周部之下方之液體承接部322。護罩321根據來自控制單元90之控制指令而升降。護罩321於以下位置之間進行升降移動,即,如圖3A所示護罩321之上端部下降至較保持於旋轉夾盤311之基板S之周緣部更靠下方之下方位置、與如圖3B所示護罩321之上端部位於較基板S之周緣部更靠上方之上方位置。The splash guard 32 is provided so as to surround the substrate holding portion 31 from the side. The splash guard 32 has a substantially cylindrical shield 321 provided to cover the periphery of the rotating chuck 311 and a liquid receiving portion 322 provided below the outer periphery of the shield 321. The shield 321 moves up and down according to the control command from the control unit 90. The shield 321 moves up and down between the following positions, that is, as shown in FIG. 3A, the upper end of the shield 321 is lowered to a lower position than the peripheral edge of the substrate S held by the rotating chuck 311, as shown in FIG. The upper end of the shield 321 shown in 3B is located above the peripheral edge of the substrate S.

護罩321位於下方位置時,如圖3A所示,保持於旋轉夾盤311之基板S成為露出於護罩321外之狀態。因此,可防止例如於對旋轉夾盤311搬入及搬出基板S時護罩321成為阻礙。When the shield 321 is at the lower position, as shown in FIG. 3A, the substrate S held by the spin chuck 311 is exposed to the outside of the shield 321. Therefore, it is possible to prevent the shield 321 from becoming an obstacle when the substrate S is carried in and out of the spin chuck 311, for example.

又,護罩321位於上方位置時,如圖3B所示,包圍保持於旋轉夾盤311之基板S之周緣部。藉此,可防止下述之液體供給時自基板S之周緣部甩離之處理液飛散至處理腔室110內,從而能夠確實地回收處理液。即,因基板S旋轉而自基板S之周緣部被甩離之處理液之液滴會附著於護罩321之內壁並朝下方流下,由配置於護罩321下方之液體承接部322收集並回收。為了將複數種處理液個別地回收,亦可將複數段護罩同心設置。In addition, when the shield 321 is at the upper position, as shown in FIG. 3B, it surrounds the peripheral edge of the substrate S held by the spin chuck 311. Thereby, it is possible to prevent the processing liquid thrown off from the peripheral portion of the substrate S during the liquid supply described below from scattering into the processing chamber 110, so that the processing liquid can be reliably recovered. That is, the liquid droplets of the processing liquid thrown off the periphery of the substrate S due to the rotation of the substrate S adhere to the inner wall of the shield 321 and flow downward, and are collected and collected by the liquid receiving portion 322 arranged below the shield 321. Recycling. In order to separately recover a plurality of treatment liquids, a plurality of stages of shields can also be arranged concentrically.

處理液供給部33具有如下構造,即,將旋動支軸332旋動自如地設置於被固定在處理腔室110之基底331,進而,於自旋動支軸332水平伸長之臂333之前端安裝有噴嘴334。臂333藉由旋動支軸332根據來自控制單元90之控制指令旋動而揺動。藉此,臂333前端之噴嘴334於如圖3A所示自基板S之上方朝側方退避之退避位置、與如圖3B所示基板S上方之處理位置之間移動。The processing liquid supply part 33 has a structure in which a rotating shaft 332 is rotatably provided on the base 331 fixed to the processing chamber 110, and further, at the front end of the arm 333 extending horizontally from the rotating shaft 332 A nozzle 334 is installed. The arm 333 is moved by rotating the pivot shaft 332 according to the control command from the control unit 90. Thereby, the nozzle 334 at the front end of the arm 333 moves between the retreat position from the upper side of the substrate S to the side as shown in FIG. 3A and the processing position above the substrate S as shown in FIG. 3B.

噴嘴334連接於設置在控制單元90之處理液供給部(省略圖示)。若自處理液供給部送出適當之處理液,則自噴嘴334朝基板S噴出處理液。如圖3B所示,藉由旋轉夾盤311以相對較低速旋轉而使基板S旋轉,並且定位於基板S之旋轉中心上方之噴嘴33供給處理液Lq。藉此,將基板S之上表面Sa藉由處理液Lq予以處理。作為處理液Lq,可使用顯影液、蝕刻液、洗淨液、洗滌液等具有各種功能之液體,其組成為任意。又,亦可將複數種處理液組合而執行處理。The nozzle 334 is connected to a processing liquid supply part (not shown) provided in the control unit 90. When an appropriate processing liquid is sent from the processing liquid supply unit, the processing liquid is ejected from the nozzle 334 toward the substrate S. As shown in FIG. 3B, the substrate S is rotated by rotating the spin chuck 311 at a relatively low speed, and the nozzle 33 positioned above the rotation center of the substrate S supplies the processing liquid Lq. Thereby, the upper surface Sa of the substrate S is processed by the processing liquid Lq. As the treatment liquid Lq, liquids having various functions such as developing liquid, etching liquid, cleaning liquid, and cleaning liquid can be used, and the composition thereof is arbitrary. Moreover, it is also possible to perform processing by combining a plurality of processing liquids.

低表面張力液供給部34亦具有與處理液供給部33對應之構成。即,低表面張力液供給部34具有基底341、旋動支軸342、臂343、噴嘴344等,其等之構成等同於處理液供給部33中所對應者。臂343藉由旋動支軸342根據來自控制單元90之控制指令旋動而揺動。臂343前端之噴嘴344對濕式處理後之基板S之上表面Sa供給用以形成液膜之低表面張力液。The low surface tension liquid supply unit 34 also has a structure corresponding to the processing liquid supply unit 33. That is, the low surface tension liquid supply unit 34 has a base 341, a rotating shaft 342, an arm 343, a nozzle 344, and the like, and the configuration thereof is equivalent to that of the processing liquid supply unit 33. The arm 343 is moved by rotating the pivot shaft 342 according to the control command from the control unit 90. The nozzle 344 at the front end of the arm 343 supplies a low surface tension liquid for forming a liquid film to the upper surface Sa of the substrate S after wet processing.

將上述圖3B之說明中之「處理液Lq」、「臂333」、「噴嘴334」分別改稱為「低表面張力液Lq」、「臂343」、「噴嘴344」,以此說明低表面張力液供給部34之動作。其中所噴出者為低表面張力液,其係與一般處理液不同種類之液體。The "treatment liquid Lq", "arm 333", and "nozzle 334" in the description of FIG. 3B are renamed "low surface tension liquid Lq", "arm 343", and "nozzle 344", respectively, to explain the low surface The operation of the tension fluid supply unit 34. The sprayed one is a low surface tension liquid, which is a different kind of liquid from the general treatment liquid.

成為處理對象之基板上表面Sa乃形成有微細之凹凸圖案(以下,簡稱為「圖案」)者時,於將濕式處理後之濕潤之基板S乾燥之過程中,會有因進入至圖案內之液體之表面張力而產生圖案坍塌之虞。作為防止此情形之方法,有如下方法:將圖案內之液體置換為表面張力更低之液體後進行乾燥之方法;以昇華性物質之固體覆蓋基板上表面Sa且使昇華性物質昇華之昇華乾燥法;及本實施形態中採用之超臨界乾燥法等。When the upper surface Sa of the substrate to be processed is formed with a fine concavo-convex pattern (hereinafter referred to as "pattern"), during the process of drying the wet substrate S after the wet processing, there may be some cause to enter the pattern The surface tension of the liquid will cause the pattern to collapse. As a method to prevent this, there are the following methods: replacing the liquid in the pattern with a liquid with a lower surface tension and then drying; sublimation drying by covering the upper surface Sa of the substrate with a solid of a sublimation substance and sublimating the sublimation substance Method; and the supercritical drying method used in this embodiment.

為了進行需要高溫、高壓狀態之超臨界乾燥處理,需要另外的與進行濕式處理之腔室不同之高壓腔室。因此,需將濕式處理後之基板S搬送至高壓腔室。為避免因搬送中基板表面之露出而導致圖案坍塌,較理想為以液體或固體覆蓋基板上表面Sa。此時,自更確實地防止由表面張力導致之圖案坍塌之觀點而言,覆蓋基板上表面Sa之液體較理想為表面張力較處理液小之液體。本說明書中將此種性質之液體稱為「低表面張力液」。In order to perform the supercritical drying process that requires high temperature and high pressure, another high pressure chamber is required that is different from the chamber for wet processing. Therefore, the wet-processed substrate S needs to be transported to the high-pressure chamber. In order to avoid pattern collapse due to exposure of the substrate surface during transportation, it is more desirable to cover the upper surface Sa of the substrate with liquid or solid. At this time, from the viewpoint of more reliably preventing pattern collapse caused by surface tension, the liquid covering the upper surface Sa of the substrate is preferably a liquid having a smaller surface tension than the treatment liquid. In this manual, liquids of this nature are called "low surface tension liquids".

本實施形態中,於以低表面張力液之液膜覆蓋基板上表面Sa之狀態下進行搬送。液膜以如下方式形成。如圖3B所示,於基板S以特定之旋轉速度旋轉之狀態下,將自設置於控制單元90之低表面張力液供給部(省略圖示)供給之低表面張力液Lq自噴嘴343噴出,藉此,基板上表面Sa成為由低表面張力液之液膜LF覆蓋之狀態。作為低表面張力液,較理想為與用於濕式處理之處理液之混和性良好,且表面張力較該處理液小者。例如,於處理液係以水為主成分者時,可較佳地利用異丙醇(IPA)。以此方式,基板上表面Sa之整體成為由低表面張力液之液膜LF覆蓋之狀態。In this embodiment, conveyance is performed in a state where the upper surface Sa of the substrate is covered with a liquid film of a low surface tension liquid. The liquid film is formed in the following manner. As shown in FIG. 3B, in a state where the substrate S is rotating at a specific rotation speed, the low surface tension liquid Lq supplied from the low surface tension liquid supply part (not shown) provided in the control unit 90 is ejected from the nozzle 343, Thereby, the upper surface Sa of the substrate becomes a state covered by the liquid film LF of the low surface tension liquid. As a low surface tension liquid, it is preferable to have a good miscibility with the treatment liquid used for wet processing and a surface tension lower than the treatment liquid. For example, when the treatment liquid contains water as the main component, isopropyl alcohol (IPA) can be preferably used. In this way, the entire upper surface Sa of the substrate is covered by the liquid film LF of the low surface tension liquid.

又,於處理腔室110內,於由旋轉夾盤311保持之基板S之上方,配置有CCD相機351及照明光源352。CCD相機351之光軸方向朝向自水平方向起之稍許下方。因此,CCD相機351自斜上方俯視保持於旋轉夾盤311之基板S且使其落入拍攝視野。照明光源352將用於拍攝之照明光朝基板S照射。藉此,拍攝基板S之上表面。拍攝資料被發送至控制單元90。In addition, in the processing chamber 110, a CCD camera 351 and an illumination light source 352 are arranged above the substrate S held by the rotating chuck 311. The direction of the optical axis of the CCD camera 351 faces slightly downward from the horizontal direction. Therefore, the CCD camera 351 looks down on the substrate S held by the spin chuck 311 from an oblique upper side and makes it fall into the imaging field of view. The illumination light source 352 illuminates the substrate S with illumination light for shooting. Thereby, the upper surface of the substrate S is photographed. The shooting data is sent to the control unit 90.

於上表面Sa由液膜LF覆蓋之狀態下自基板處理單元11A搬出之基板S被搬送至基板處理單元13A且受到乾燥處理。即,基板處理單元13A具有執行作為基板處理之乾燥處理之功能,該乾燥處理係去除形成於以水平姿勢搬入之基板S之上表面Sa之液膜LF,使基板S乾燥。作為乾燥處理,應用將基板S以超臨界流體覆蓋後使超臨界流體(不經由液相)氣化而去除之超臨界乾燥。此處對基板處理單元13A之構成進行說明,執行乾燥處理之其他基板處理單元13B、14A等之構成亦基本相同。The substrate S carried out from the substrate processing unit 11A in a state where the upper surface Sa is covered by the liquid film LF is transported to the substrate processing unit 13A and subjected to drying processing. That is, the substrate processing unit 13A has a function of performing a drying process as a substrate process that removes the liquid film LF formed on the upper surface Sa of the substrate S carried in in a horizontal position to dry the substrate S. As the drying process, supercritical drying is applied in which the substrate S is covered with a supercritical fluid and then the supercritical fluid is vaporized (not through the liquid phase) and removed. Here, the structure of the substrate processing unit 13A will be described, and the structures of the other substrate processing units 13B, 14A, etc. that perform the drying process are also basically the same.

圖4係表示執行超臨界乾燥處理之基板處理單元之圖。更具體而言,圖4係表示基板處理單元13A之內部構造之側面剖視圖。超臨界乾燥處理之原理及為此所需之基本構成已眾所周知,故此處省略詳細之說明。基板處理單元13A具備高壓腔室130,且於其內部設置有作為乾燥處理之執行主體之乾燥處理部40。乾燥處理部40中,用以載置基板S之平台41設置於高壓腔室130內。平台41藉由吸附保持或機械保持而將上表面Sa被液膜覆蓋之基板S保持。高壓腔室130為高壓,故為了耐高壓而使用內部構成相對較簡單、又能耐高壓之構件。Fig. 4 is a diagram showing a substrate processing unit that performs supercritical drying processing. More specifically, FIG. 4 is a side sectional view showing the internal structure of the substrate processing unit 13A. The principle of supercritical drying treatment and the basic structure required for this are well known, so detailed description is omitted here. The substrate processing unit 13A is provided with a high-pressure chamber 130, and a drying processing unit 40 as a main body of the drying processing is provided inside. In the drying processing part 40, a platform 41 for placing the substrate S is installed in the high pressure chamber 130. The platform 41 holds the substrate S whose upper surface Sa is covered by the liquid film by suction holding or mechanical holding. The high pressure chamber 130 is high pressure, so in order to withstand high pressure, a relatively simple internal structure and high pressure resistance component is used.

於平台41之下表面中央,旋轉支軸42朝下延伸。旋轉支軸42經由高壓密封旋轉導入機構43而插通於高壓腔室130之底面。高壓密封旋轉導入機構43之旋轉軸431連接於旋轉機構432。因此,若旋轉機構432根據來自控制單元90之控制指令而作動,則基板S與平台41一起繞由單點鏈線表示之鉛垂方向之旋轉軸旋轉。At the center of the lower surface of the platform 41, the pivot shaft 42 extends downward. The rotation support shaft 42 is inserted into the bottom surface of the high pressure chamber 130 via the high pressure seal rotation introduction mechanism 43. The rotating shaft 431 of the high-pressure seal rotating introduction mechanism 43 is connected to the rotating mechanism 432. Therefore, if the rotation mechanism 432 is actuated in accordance with the control command from the control unit 90, the substrate S and the stage 41 rotate together around the rotation axis in the vertical direction indicated by the single-dot chain line.

於高壓腔室130之內部且平台41之上方設置有流體分散構件44。流體分散構件44係設置有複數個相對於平板狀之閉塞板441而上下貫通之貫通孔442者。視需要將二氧化碳氣體自二氧化碳供給部45供給至高壓腔室130之上部,二氧化碳氣體藉由流體分散構件44而整流,自基板S之上方朝基板S均勻地供給。A fluid dispersion member 44 is arranged inside the high pressure chamber 130 and above the platform 41. The fluid dispersion member 44 is provided with a plurality of through holes 442 penetrating up and down with respect to the flat blocking plate 441. If necessary, carbon dioxide gas is supplied from the carbon dioxide supply part 45 to the upper part of the high pressure chamber 130, and the carbon dioxide gas is rectified by the fluid dispersing member 44, and is uniformly supplied from above the substrate S toward the substrate S.

又,視需要將氮自氮供給部46導入至高壓腔室130內。視需要,將氮以各種形態,亦即作為常溫或升溫後之氣體、或作為經冷卻而液化之液體氮,根據沖洗高壓腔室130內之氣體或使腔室內冷卻等目的而供給。In addition, nitrogen is introduced into the high pressure chamber 130 from the nitrogen supply unit 46 as necessary. If necessary, nitrogen is supplied in various forms, that is, as normal temperature or heated gas, or as liquid nitrogen that has been cooled and liquefied, according to the purpose of flushing the gas in the high-pressure chamber 130 or cooling the chamber.

進而,於高壓腔室130連接有排出機構48。排出機構48具有將導入至高壓腔室130內之氣體或液體等各種流體排出之功能。排出機構48為此而具備配管或閥、泵等。藉此,必要時可將高壓腔室130內之流體快速地排出。Furthermore, a discharge mechanism 48 is connected to the high pressure chamber 130. The discharge mechanism 48 has a function of discharging various fluids such as gas or liquid introduced into the high pressure chamber 130. The discharge mechanism 48 is equipped with pipes, valves, pumps, and the like for this purpose. Thereby, the fluid in the high-pressure chamber 130 can be quickly discharged when necessary.

雖省略圖示,但控制單元90具有用以檢測高壓腔室130內之壓力或溫度之構成及用以將其等控制為特定值之構成。即,控制單元90具有將高壓腔室130內之壓力及溫度控制為特定之目標值之功能。Although illustration is omitted, the control unit 90 has a configuration for detecting the pressure or temperature in the high-pressure chamber 130 and a configuration for controlling them to specific values. That is, the control unit 90 has a function of controlling the pressure and temperature in the high-pressure chamber 130 to specific target values.

其次,對如上所述構成之基板處理裝置1之動作進行說明。如此前所說明,該基板處理裝置1係對基板S依序執行濕式處理及乾燥處理之裝置。該處理之主要流程如下。即,將基板S搬送至執行濕式處理之基板處理單元而執行處理液之處理之後,形成低表面張力液之液膜,將該基板S搬送至執行乾燥處理之基板處理單元且去除液膜而使基板S乾燥。以下,對具體之處理內容進行說明。Next, the operation of the substrate processing apparatus 1 configured as described above will be described. As described above, the substrate processing apparatus 1 is an apparatus that sequentially performs wet processing and drying processing on the substrate S. The main flow of this treatment is as follows. That is, after the substrate S is transported to a substrate processing unit that performs wet processing and the processing liquid is processed, a liquid film of a low surface tension liquid is formed, and the substrate S is transported to a substrate processing unit that performs drying processing and the liquid film is removed. The substrate S is dried. The specific processing content will be described below.

此處,設為基板處理單元11A對1片基板S執行濕式處理,且基板處理單元13A對該1片基板S執行乾燥處理而進行說明。然而,執行濕式處理之基板處理單元與執行乾燥處理之基板處理單元之組合為任意,而並不限定於此。又,以下說明中,為了明確地表示各基板處理單元之作用,分別將執行濕式處理之基板處理單元11A等稱為「濕式處理單元」,又將執行乾燥處理之基板處理單元13A等稱為「乾燥處理單元」。Here, it is assumed that the substrate processing unit 11A performs wet processing on one substrate S and the substrate processing unit 13A performs drying processing on the one substrate S. However, the combination of the substrate processing unit performing wet processing and the substrate processing unit performing dry processing is arbitrary, and is not limited to this. In addition, in the following description, in order to clearly show the role of each substrate processing unit, the substrate processing unit 11A that performs wet processing is referred to as "wet processing unit", and the substrate processing unit 13A that performs dry processing is referred to as It is the "dry processing unit".

圖5係表示該基板處理裝置之動作之流程圖。該動作係藉由CPU91執行預先準備之控制程式以使裝置各部執行特定之動作而實現。首先,移載傳送機器人22自收容未處理基板之容器C之一中取出1片未處理基板S(步驟S101)。繼而,將基板S自移載傳送機器人22移交給中心機器人15(步驟S102)。中心機器人15將基板S搬入至執行濕式處理之基板處理單元(濕式處理單元)11A(步驟S103)。Fig. 5 is a flowchart showing the operation of the substrate processing apparatus. This action is realized by the CPU 91 executing a pre-prepared control program to make each part of the device execute a specific action. First, the transfer robot 22 takes out one unprocessed substrate S from one of the containers C that accommodates the unprocessed substrate (step S101). Then, the substrate S is transferred from the transfer robot 22 to the center robot 15 (step S102). The center robot 15 carries the substrate S into the substrate processing unit (wet processing unit) 11A that performs wet processing (step S103).

搬入有基板S之基板處理單元11A對基板S執行濕式處理(步驟S104)。如前所說明,濕式處理之內容係將處理液供給至基板S而進行基板上表面Sa之加工或洗淨。對濕式處理後之基板S,執行用以形成低表面張力液之液膜LF之液膜形成處理(步驟S105)。The substrate processing unit 11A into which the substrate S is loaded performs wet processing on the substrate S (step S104). As described above, the content of wet processing is to supply the processing liquid to the substrate S to process or clean the upper surface Sa of the substrate. A liquid film forming process for forming a liquid film LF of a low surface tension liquid is performed on the substrate S after the wet process (step S105).

將藉由液膜形成處理而於上表面Sa形成有液膜LF之基板S藉由中心機器人15自基板處理單元11A取出,且搬入至執行乾燥處理之基板處理單元(乾燥處理單元)13A。即,執行將基板S自基板處理單元11A移送至基板處理單元13A之移送處理(步驟S106)。作為移送處理可考慮各種態樣,故關於其等各種態樣,以下進行彙總並詳細敍述。The substrate S with the liquid film LF formed on the upper surface Sa by the liquid film forming process is taken out from the substrate processing unit 11A by the central robot 15 and carried into the substrate processing unit (drying processing unit) 13A that performs the drying process. That is, the transfer process of transferring the substrate S from the substrate processing unit 11A to the substrate processing unit 13A is performed (step S106). Various aspects can be considered as the transfer process, so various aspects such as these are summarized and described in detail below.

搬入有基板S之基板處理單元13A對基板S執行去除所附著之液體而使基板S乾燥之乾燥處理(步驟S107)。基板處理單元13A中,執行使用有超臨界流體之超臨界乾燥處理。即,自二氧化碳供給部45將二氧化碳導入至高壓腔室130內,且充分提高腔室內壓,藉此,二氧化碳液化。或亦可將液狀之二氧化碳導入至高壓腔室130。液狀之二氧化碳覆蓋基板上表面Sa。液化之二氧化碳充分溶解有機溶劑。因此,殘存於圖案內之IPA等液體由液狀之二氧化碳置換。The substrate processing unit 13A carrying the substrate S performs a drying process for removing the attached liquid to dry the substrate S (step S107). In the substrate processing unit 13A, a supercritical drying process using a supercritical fluid is performed. That is, carbon dioxide is introduced into the high pressure chamber 130 from the carbon dioxide supply part 45, and the pressure in the chamber is sufficiently increased, whereby the carbon dioxide is liquefied. Or, liquid carbon dioxide can also be introduced into the high pressure chamber 130. Liquid carbon dioxide covers the upper surface Sa of the substrate. The liquefied carbon dioxide fully dissolves the organic solvent. Therefore, the liquid such as IPA remaining in the pattern is replaced by liquid carbon dioxide.

繼而,將高壓腔室130內之溫度及壓力調整為使二氧化碳為超臨界狀態之條件。藉此,高壓腔室130內之二氧化碳成為超臨界流體。超臨界狀態之流體之流動性極高且表面張力極小。尤其自二氧化碳生成之超臨界流體充分溶解IPA、丙酮等有機溶劑。因此,二氧化碳之超臨界流體進入微細圖案之深處,將殘存之有機溶劑成分自圖案內移出。於相對較低壓、低溫下成為超臨界狀態之點亦為將二氧化碳應用於超臨界乾燥處理之理由之一。Then, the temperature and pressure in the high-pressure chamber 130 are adjusted to make the carbon dioxide in a supercritical state. Thereby, the carbon dioxide in the high pressure chamber 130 becomes a supercritical fluid. The fluid in the supercritical state has extremely high fluidity and extremely low surface tension. Especially the supercritical fluid generated from carbon dioxide fully dissolves organic solvents such as IPA and acetone. Therefore, the supercritical fluid of carbon dioxide enters the depths of the fine pattern and removes the remaining organic solvent components from the pattern. The point at which it becomes a supercritical state at relatively low pressure and low temperature is also one of the reasons why carbon dioxide is used in supercritical drying treatment.

繼而,使高壓腔室130內急遽減壓,藉此,超臨界流體不經過液相而直接氣化而自基板S去除。藉此,基板S成為液體成分被完全去除而乾燥之狀態。殘存於圖案內之液體成分由超臨界流體置換,且藉由超臨界流體直接氣化,可避免因圖案內之液體之表面張力導致之圖案坍塌之問題。Then, the pressure in the high-pressure chamber 130 is suddenly reduced, whereby the supercritical fluid is directly vaporized and removed from the substrate S without passing through the liquid phase. Thereby, the substrate S is in a state where the liquid component is completely removed and dried. The liquid component remaining in the pattern is replaced by the supercritical fluid, and the supercritical fluid is directly vaporized to avoid the problem of pattern collapse caused by the surface tension of the liquid in the pattern.

處理後之基板S藉由中心機器人15而自基板處理單元13A取出(步驟S108)。將取出之處理後之基板S自中心機器人15移交給移載傳送機器人22(步驟S109)。移載傳送機器人22將基板S收容至容器C之一(步驟S110)。供收容處理過的基板S之容器C可為曾經收容有未處理狀態之該基板S之容器,又亦可為其他容器。The processed substrate S is taken out from the substrate processing unit 13A by the central robot 15 (step S108). The taken-out processed substrate S is transferred from the center robot 15 to the transfer robot 22 (step S109). The transfer robot 22 stores the substrate S in one of the containers C (step S110). The container C for accommodating the processed substrate S may be a container that once accommodated the substrate S in an unprocessed state, or other containers.

進而於存在應處理之基板之情形時(步驟S111中是),返回至步驟S101,對下一片基板S執行上述處理。若不存在應處理之基板(步驟S111中否),則結束處理。Furthermore, when there is a substrate to be processed (YES in step S111), the process returns to step S101, and the above-mentioned processing is performed on the next substrate S. If there is no substrate to be processed (No in step S111), the processing ends.

以上,對處理1片基板S之情形時之流程進行了說明,但於實際之裝置中並行執行對複數片基板之處理。即,1片基板S於1個基板處理單元內受到處理之期間,能夠同時並行地執行移載傳送機器人22及中心機器人15對於其他基板之搬送、以及由其他基板處理單元進行之基板處理中之至少一者。In the above, the flow in the case of processing one substrate S has been described, but the processing of a plurality of substrates is performed in parallel in an actual device. That is, while one substrate S is being processed in one substrate processing unit, the transfer of the transfer robot 22 and the center robot 15 to other substrates and the substrate processing performed by the other substrate processing units can be simultaneously executed in parallel. At least one.

更具體而言,例如於步驟S102中將基板S自移載傳送機器人22移交給中心機器人15之後,移載傳送機器人22能夠重新進出容器C且取出其他基板。又,例如,於步驟S103中將1片基板S搬入至基板處理單元11A之後,中心機器人15能夠將其他基板搬入至其他基板處理單元,或將經其他基板處理單元處理後之其他基板搬出。More specifically, for example, after the substrate S is transferred from the transfer robot 22 to the center robot 15 in step S102, the transfer robot 22 can enter and exit the container C again and take out other substrates. In addition, for example, after one substrate S is loaded into the substrate processing unit 11A in step S103, the central robot 15 can transfer other substrates to other substrate processing units, or unload other substrates processed by the other substrate processing units.

因此,於需要對複數片基板S依序進行處理之情形時,藉由適當調節用以處理各基板S之裝置各部之動作順序,而使對複數片基板之處理並行進行。以此方式,能夠使作為基板處理裝置1整體之處理之產能提高。具體之動作順序需根據處理之規格、上述各步驟所需時間或可否同時處理等而適當決定。Therefore, when a plurality of substrates S need to be processed sequentially, the processing of the plurality of substrates can be performed in parallel by appropriately adjusting the operation sequence of each part of the apparatus for processing each substrate S. In this way, the throughput of the processing as the entire substrate processing apparatus 1 can be improved. The specific sequence of actions should be appropriately determined according to the processing specifications, the time required for each of the above steps, or whether they can be processed simultaneously.

其次,對上述基板處理之移送處理(圖5之步驟S106)之若干態樣進行說明。移送處理之目的在於,將於上表面Sa形成有液膜LF之基板S自基板處理單元11A搬出,且於維持液膜LF之狀態下,亦即在不使基板上表面Sa露出的情況下搬送至基板處理單元13A。為此目的,本實施形態中,使用藉由設置於基板處理單元11A之CCD相機351及設置於中心機器人15之CCD相機157拍攝之圖像。Next, several aspects of the transfer process (step S106 in FIG. 5) of the above-mentioned substrate process will be described. The purpose of the transfer process is to transport the substrate S with the liquid film LF formed on the upper surface Sa from the substrate processing unit 11A, while maintaining the liquid film LF, that is, without exposing the upper surface Sa of the substrate. To the substrate processing unit 13A. For this purpose, in this embodiment, images taken by the CCD camera 351 provided in the substrate processing unit 11A and the CCD camera 157 provided in the center robot 15 are used.

圖6係表示移送處理之第1態樣之流程圖。首先,於基板處理單元11A之處理腔室110內,藉由CCD相機351拍攝剛進行液膜形成處理後之基板S(步驟S201)。此時,實際上拍攝覆蓋基板上表面Sa而形成之液膜LF。較理想為覆蓋基板上表面Sa之液膜LF之整體落入圖像中。將所拍攝之圖像之資料作為基準資料保存於控制單元90之記憶體92。Fig. 6 is a flowchart showing the first aspect of the transfer process. First, in the processing chamber 110 of the substrate processing unit 11A, the CCD camera 351 photographs the substrate S just after the liquid film formation process (step S201). At this time, the liquid film LF formed to cover the upper surface Sa of the substrate is actually photographed. It is more desirable that the entire liquid film LF covering the upper surface Sa of the substrate falls into the image. The data of the captured image is stored in the memory 92 of the control unit 90 as reference data.

繼而,中心機器人15之手155進入處理腔室110內而保持基板S(步驟S202),且藉由手155水平移動而開始基板S之搬送(步驟S203)。於搬送中,藉由設置於中心機器人15之CCD相機157而隨時拍攝基板上表面Sa之液膜LF(步驟S204)。較理想為,由CCD相機157拍攝之圖像與由CCD相機351拍攝之圖像之間,基板S於圖像內所占之位置、大小及仰角相同。Then, the hand 155 of the center robot 15 enters the processing chamber 110 to hold the substrate S (step S202), and the transfer of the substrate S is started by the horizontal movement of the hand 155 (step S203). During the transportation, the liquid film LF on the upper surface Sa of the substrate is photographed at any time by the CCD camera 157 provided in the center robot 15 (step S204). Preferably, between the image captured by the CCD camera 157 and the image captured by the CCD camera 351, the position, size, and elevation angle of the substrate S in the image are the same.

將由拍攝獲得之圖像與最初拍攝之基準圖像加以比較。即,求出由CCD相機157新拍攝之圖像、與處理腔室110內由CCD相機351拍攝之圖像之差分(步驟S205)。若其結果為兩圖像有顯著差異,則認為基板S上之液膜LF有某些變化。例如將兩圖像間每一像素之差分之絕對值於圖像內累計,根據其值是否超出預先設定之基準量(閾值)而可判斷是否有顯著差異。液膜厚度之不同呈現為表面反射率之變動或干擾條紋之產生狀況之不同。藉由求出圖像之差分而可檢測此種不同。The image obtained by shooting is compared with the reference image originally shot. That is, the difference between the image newly captured by the CCD camera 157 and the image captured by the CCD camera 351 in the processing chamber 110 is obtained (step S205). If the result is a significant difference between the two images, it is considered that the liquid film LF on the substrate S has some changes. For example, the absolute value of the difference of each pixel between the two images is accumulated in the image, and it can be judged whether there is a significant difference according to whether the value exceeds a preset reference amount (threshold value). The difference in the thickness of the liquid film appears as a change in surface reflectivity or a difference in the generation of interference fringes. This difference can be detected by finding the difference of the image.

作為搬送中之液膜中可引起之變化,認為主要為伴隨振動而導致之液面之搖晃、液體落下或揮發而導致之液量減少。針對該等情形,有效的是將低表面張力液補充至基板S。因此,於液膜有顯著變化之情形時(步驟S206中是),自設置於中心機器人15之補充液噴嘴158補充特定量之低表面張力液(步驟S207)。藉此,可防止因液量減少導致之液膜破損。於未見顯著變化之情形時(步驟S206中否),不進行液體補充。As the changes that can be caused in the liquid film during transport, it is considered that the liquid level is shaken due to vibration, and the liquid drops or volatilizes and the amount of liquid decreases. In view of these situations, it is effective to supplement the substrate S with a low surface tension liquid. Therefore, when there is a significant change in the liquid film (Yes in step S206), a specific amount of low surface tension liquid is replenished from the replenishing liquid nozzle 158 provided in the central robot 15 (step S207). This prevents the liquid film from being damaged due to the decrease in the liquid volume. When no significant change is seen (No in step S206), no liquid replenishment is performed.

於基板S到達目標位置,亦即基板處理單元13A之高壓腔室130內之前,反覆執行上述步驟S204~S207(步驟S208中否)。因此,於基板S移送期間,可時常監視液膜LF之狀態,必要時進行低表面張力液之補充。藉此,可穩定地維持基板S上之液膜。若到達目標位置(步驟S208中是),則基板S自中心機器人15移載至高壓腔室130內之平台41(步驟S209),藉此完成基板S之移送。Before the substrate S reaches the target position, that is, in the high-pressure chamber 130 of the substrate processing unit 13A, the above steps S204 to S207 are repeatedly performed (No in step S208). Therefore, during the transfer of the substrate S, the state of the liquid film LF can be monitored from time to time, and the low surface tension liquid can be supplemented when necessary. Thereby, the liquid film on the substrate S can be stably maintained. If it reaches the target position (YES in step S208), the substrate S is transferred from the central robot 15 to the platform 41 in the high pressure chamber 130 (step S209), thereby completing the transfer of the substrate S.

圖7係表示移送處理之第2態樣之流程圖。於該態樣中,代替第1態樣中之步驟S207而設有步驟S221。除此以外之處理內容與第1態樣相同,故對於相同處理標註相同符號而省略說明。代替第1態樣中之液體補充而於第2態樣中執行之步驟S221中,變更中心機器人15對基板S之搬送速度。Fig. 7 is a flowchart showing the second aspect of the transfer process. In this aspect, step S221 is provided instead of step S207 in the first aspect. The processing content other than this is the same as that of the first aspect, so the same processing is denoted by the same reference numerals and the description is omitted. In step S221 performed in the second aspect instead of the liquid replenishment in the first aspect, the conveying speed of the substrate S by the center robot 15 is changed.

例如於因振動或突然之加減速而導致低表面張力液自基板S落下之案例中,藉由將基板S更緩慢地搬送而可抑制液體落下。即,該情形時只要使搬送速度降低即可。例如於如液膜之表面起波紋之情形時,可視作因振動而導致液膜LF搖晃。另一方面,由液體揮發導致之液量減少呈現為基板S整體之液膜之膜厚降低。此種情形時較佳為使搬送速度增加,以更短時間完成搬送。再者,於單獨實施該態樣之情形時,關於補充液噴嘴158亦可省略。For example, in the case where the low surface tension liquid falls from the substrate S due to vibration or sudden acceleration and deceleration, the liquid falling can be suppressed by transporting the substrate S more slowly. That is, in this case, it is only necessary to reduce the transport speed. For example, when the surface of the liquid film is corrugated, it can be regarded as shaking the liquid film LF due to vibration. On the other hand, the decrease in the liquid volume caused by the volatilization of the liquid appears as a decrease in the film thickness of the liquid film of the entire substrate S. In this case, it is preferable to increase the conveying speed to complete the conveying in a shorter time. Furthermore, when this aspect is implemented separately, the supplementary liquid nozzle 158 may also be omitted.

圖8係表示移送處理之第3態樣之流程圖。又,圖9係表示包含該移送處理之基板處理動作之流程圖。該態樣中,由於移送處理之內容不同,故基板處理之動作本身亦需改變。此處,對於與之前說明之處理相同內容之處理標註相同符號而省略說明。如圖8所示,第3態樣之移送處理中,於步驟S206中液膜之圖像有顯著變化之情形時,設置用以使以後之處理不同之例外標記(步驟S231)。該情形時,基板S之移送被中斷。Fig. 8 is a flowchart showing the third aspect of the transfer process. In addition, FIG. 9 is a flowchart showing a substrate processing operation including the transfer processing. In this aspect, since the content of the transfer process is different, the operation of the substrate processing itself also needs to be changed. Here, the processing with the same content as the processing described previously is denoted by the same reference numerals and the description is omitted. As shown in FIG. 8, in the transfer process of the third aspect, when the image of the liquid film changes significantly in step S206, an exception flag is set to make the subsequent process different (step S231). In this case, the transfer of the substrate S is interrupted.

如圖9所示,於該態樣之基板處理中,於移送處理(步驟S106)之後追加有判斷是否設置例外標記之步驟S121。於設置有標記之情形時(步驟S121中是),中心機器人15將基板S放回濕式處理單元11A(步驟S122)。隨此,重設例外標記(步驟S123)。繼而,於濕式處理單元11A再次執行液膜形成處理(步驟S105)後,再次執行移送處理(步驟S106)。As shown in FIG. 9, in the substrate processing of this aspect, after the transfer processing (step S106), a step S121 of judging whether to set an exception flag is added. When a mark is provided (Yes in step S121), the center robot 15 puts the substrate S back into the wet processing unit 11A (step S122). Following this, the exception flag is reset (step S123). Then, after the liquid film formation process is performed again in the wet processing unit 11A (step S105), the transfer process is performed again (step S106).

於該態樣中,於基板S上之液膜LF有變化之情形時,於基板處理單元11A再形成液膜LF。若未設置例外標記(步驟S121中否),則液膜LF無較大之變化,故繼續執行乾燥處理(步驟S107)。藉此,可避免於液膜LF產生有破損之狀態下搬入至基板處理單元13A。即,可於穩定地維持液膜LF之狀態下移送基板S。再者,關於該態樣,於單獨實施之情形時亦可省略補充液噴嘴158。In this aspect, when the liquid film LF on the substrate S changes, the liquid film LF is formed in the substrate processing unit 11A. If the exception flag is not set (No in step S121), the liquid film LF does not change significantly, so the drying process is continued (step S107). Thereby, it is possible to avoid being carried into the substrate processing unit 13A in a state where the liquid film LF is damaged. That is, the substrate S can be transferred while the liquid film LF is stably maintained. Furthermore, regarding this aspect, the replenishing liquid nozzle 158 may also be omitted in the case of separate implementation.

圖10係表示移送處理之第4態樣之流程圖。圖10中,對於與圖6所示之移送處理相同之內容亦標註相同符號而省略說明。該態樣中,步驟S201中由CCD相機351進行液膜之拍攝後,將其圖像與預先準備之理想圖像加以比較。即,求出所拍攝之圖像與理想圖像之差分(步驟S241)。所謂理想圖像係與基板S之上表面Sa由特定厚度之液膜LF均勻地覆蓋之理想狀態對應的圖像。Fig. 10 is a flowchart showing the fourth aspect of the transfer process. In FIG. 10, the same content as the transfer process shown in FIG. 6 is also denoted by the same reference numerals, and the description is omitted. In this aspect, after the liquid film is photographed by the CCD camera 351 in step S201, the image is compared with the ideal image prepared in advance. That is, the difference between the captured image and the ideal image is calculated (step S241). The so-called ideal image is an image corresponding to an ideal state in which the upper surface Sa of the substrate S is uniformly covered by a liquid film LF of a specific thickness.

該處理係用以驗證基板S上是否形成有適當之液膜LF之處理。即,於濕式處理後之基板S,因作為處理之結果產生表面之凹凸或濕潤性之變化,故會產生難以形成均勻之液膜之情形。尤其若處理後之基板表面為具有撥液性之狀態,則難以擔載均勻之液膜。又,根據用以形成液膜之裝置構成之動作異常或基板S之保持態樣而亦會有最初便未形成適當之液膜之情形。藉由將液膜剛形成後之基板S之圖像與理想圖像加以比較而可立即偵測此種異常。又,亦可基於與理想圖像之差分之大小而調整用於液膜形成之液體供給量或基板S之旋轉速度。This process is used to verify whether an appropriate liquid film LF is formed on the substrate S. In other words, the substrate S after the wet processing has surface irregularities or changes in wettability as a result of the processing, so it is difficult to form a uniform liquid film. Especially if the surface of the substrate after processing is in a state with liquid repellency, it is difficult to support a uniform liquid film. In addition, depending on the abnormal operation of the device configuration for forming the liquid film or the holding state of the substrate S, there may be cases where a proper liquid film is not formed initially. Such an abnormality can be detected immediately by comparing the image of the substrate S just after the formation of the liquid film with the ideal image. In addition, the liquid supply amount for liquid film formation or the rotation speed of the substrate S may be adjusted based on the magnitude of the difference from the ideal image.

若所拍攝之圖像與理想圖像之間有顯著差異(步驟S242中是),則經過適當之錯誤處理(步驟S243)而中止移送處理。錯誤處理之內容為任意,例如考慮將異常產生報知給操作員,將此時之圖像進行顯示輸出等。較理想為,即便對偵測出異常之基板S中止處理,亦可繼續進行對無異常之基板之處理。If there is a significant difference between the captured image and the ideal image (Yes in step S242), the transfer process is terminated after proper error processing (step S243). The content of error handling is arbitrary. For example, consider reporting the occurrence of an abnormality to the operator and displaying the image at this time. Ideally, even if the processing of the abnormal substrate S is stopped, the processing of the non-abnormal substrate can be continued.

若未偵測出異常(步驟S242中否),則將所拍攝之圖像作為基準圖像而執行步驟S202以後之移送處理。此處設為執行第1態樣之移送處理,但亦可執行第2或第3態樣之處理。If no abnormality is detected (No in step S242), the captured image is used as the reference image and the transfer processing after step S202 is executed. Here, it is assumed that the transfer processing of the first aspect is executed, but the processing of the second or third aspect can also be executed.

又,上述各態樣之處理亦可適當組合。例如,亦可對由CCD相機157拍攝之圖像與基準圖像之差分之大小設定複數個基準量,使以後之處理根據差分之大小而變化。In addition, the above-mentioned various aspects of processing can also be appropriately combined. For example, it is also possible to set a plurality of reference quantities for the size of the difference between the image captured by the CCD camera 157 and the reference image, so that the subsequent processing changes according to the size of the difference.

於現實之基板處理中,根據後續之處理狀況等而可能有如下情形,即,自將基板S載置於處理腔室110且於其上表面Sa形成液膜LF起直至開始搬送基板S為止,要長時間待機。作為應對此種狀況之措施,例如亦可局部地變更圖10所示之處理,以如下方式實施。於自基板S上形成液膜LF起直至開始搬送之期間之互不相同之複數個時刻,藉由處理腔室110內之CCD相機351拍攝液膜LF。比較其等之圖像,於確認所拍攝之最新圖像與理想圖像或最初拍攝之圖像之間於液膜有顯著差異時,執行液體之補充或適當之錯誤處理(步驟S243)。In actual substrate processing, depending on the subsequent processing conditions, etc., there may be situations where the substrate S is placed in the processing chamber 110 and the liquid film LF is formed on the upper surface Sa until the substrate S starts to be transported. Long standby time. As a measure to cope with such a situation, for example, the processing shown in FIG. 10 may be partially changed and implemented as follows. The liquid film LF is photographed by the CCD camera 351 in the processing chamber 110 at a plurality of different moments from the formation of the liquid film LF on the substrate S to the start of the transportation. Comparing the other images and confirming that there is a significant difference in the liquid film between the latest image taken and the ideal image or the first image taken, liquid replenishment or appropriate error processing is performed (step S243).

如此,於本實施形態之基板處理中,將自於基板S上形成液膜LF起直至結束搬送之期間之不同時刻所拍攝之複數個液膜之圖像加以比較,並根據其結果而決定以後之搬送動作。因此,可不延誤地偵測由搬送中之振動或揮發引起之液膜之變動,且根據狀況而變更搬送動作。以此方式,本實施形態中,能夠於表面穩定地形成有液膜之狀態下搬送基板。其結果,可防止由於搬送中之振動或液體之揮發等而導致基板表面之露出。In this way, in the substrate processing of this embodiment, the images of a plurality of liquid films taken at different times during the period from when the liquid film LF is formed on the substrate S to the end of the conveyance are compared, and the subsequent decisions are determined based on the results. The conveying action. Therefore, the change of the liquid film caused by the vibration or volatilization during transportation can be detected without delay, and the transportation action can be changed according to the situation. In this way, in this embodiment, the substrate can be conveyed in a state where a liquid film is stably formed on the surface. As a result, it is possible to prevent the surface of the substrate from being exposed due to vibration during transportation or volatilization of liquid.

如上所說明,上述實施形態中,濕式處理單元即基板處理單元11A等作為本發明之「第1處理部」發揮功能,乾燥處理單元即基板處理單元13A等作為本發明之「第2處理部」發揮功能。而且,中心機器人15作為本發明之「搬送機構」發揮功能。又,處理腔室110作為本發明之「處理腔室」發揮功能。As described above, in the above embodiment, the substrate processing unit 11A or the like as the wet processing unit functions as the "first processing unit" of the present invention, and the substrate processing unit 13A or the like as the dry processing unit as the "second processing unit" of the present invention "Play to function. Furthermore, the center robot 15 functions as the "transport mechanism" of the present invention. In addition, the processing chamber 110 functions as the "processing chamber" of the present invention.

又,上述實施形態中,手155作為本發明之「保持構件」發揮功能。而且,CCD相機157、351分別作為本發明之「第2相機」、「第1相機」發揮功能,其等構成本發明之「拍攝部」。又,補充液噴嘴158作為本發明之「液體供給機構」發揮功能。又,控制單元90作為本發明之「控制部」發揮功能。而且,於液膜剛形成後藉由相機351拍攝之液膜之圖像相當於本發明中之「搬送前圖像」。In addition, in the above-mentioned embodiment, the hand 155 functions as the "holding member" of the present invention. In addition, the CCD cameras 157 and 351 function as the "second camera" and the "first camera" of the present invention, respectively, and they constitute the "imaging unit" of the present invention. In addition, the replenishing liquid nozzle 158 functions as the "liquid supply mechanism" of the present invention. In addition, the control unit 90 functions as the "control unit" of the present invention. Furthermore, the image of the liquid film taken by the camera 351 immediately after the liquid film is formed corresponds to the "image before transport" in the present invention.

再者,本發明並不限定於上述實施形態,可於不脫離其主旨之限度內進行除上述以外之各種變更。例如,上述實施形態係將與本發明之「第1處理部」、「第2處理部」、「搬送機構」分別相當之基板處理單元11A、基板處理單元13A、中心機器人15收納於1個殼體而構成一體之處理系統。然而,本發明對於具有彼此獨立地設置之第1處理部及第2處理部、以及於其等之間搬送基板之搬送機構之處理系統亦可應用。In addition, the present invention is not limited to the above-mentioned embodiments, and various modifications other than the above can be made within the limits not departing from the gist. For example, in the above-mentioned embodiment, the substrate processing unit 11A, the substrate processing unit 13A, and the center robot 15 corresponding to the "first processing section", "second processing section", and "transport mechanism" of the present invention are housed in one housing The body constitutes an integrated processing system. However, the present invention can also be applied to a processing system having a first processing section and a second processing section that are provided independently of each other, and a transport mechanism for transporting substrates therebetween.

又,上述實施形態中將由處理腔室110內之CCD相機351拍攝之液膜之圖像作為基準圖像,但基準圖像並不限定於此。例如,亦可將於搬送之初始階段由CCD相機157拍攝之圖像作為基準圖像。該情形時,於觀察搬送中之液膜之狀態之目的下無需處理腔室110內之CCD相機351。又,尤其若將CCD相機157以與手155一體移動之方式而構成,則於搬送中之各階段保持於手155之基板S與CCD相機157之位置關係不變。根據此種構成,於圖像間之比較中無需相互之位置對準,又可使差分算出之精度進一步提高。In addition, in the above-mentioned embodiment, the image of the liquid film taken by the CCD camera 351 in the processing chamber 110 is used as the reference image, but the reference image is not limited to this. For example, the image taken by the CCD camera 157 at the initial stage of transportation may be used as the reference image. In this case, the CCD camera 351 in the processing chamber 110 is not required for the purpose of observing the state of the liquid film during transportation. In addition, especially if the CCD camera 157 is configured to move integrally with the hand 155, the positional relationship between the substrate S on the hand 155 and the CCD camera 157 is maintained at each stage of the transportation. According to this structure, it is not necessary to align the positions of the images in comparison, and the accuracy of the difference calculation can be further improved.

又,上述實施形態中,將CCD相機157安裝於在搬送基板S時與基板S一起移動之中心機器人15。亦可代替此,例如藉由固定地設置於將基板S之搬送路徑盡收眼底之位置之相機而拍攝所搬送之基板S。尤其對設置有微細圖案之基板S而言,為防止圖案坍塌,即便短時間亦不容許基板表面露出。因此,該情形時較佳為如下狀態,即,於搬送路徑上配置有複數個相機,且能夠以較短之時間間隔拍攝與基板S一起搬送之液膜。或者,亦可設置用以使相機追隨基板S之移動之機構。Furthermore, in the above-mentioned embodiment, the CCD camera 157 is attached to the center robot 15 that moves with the substrate S when the substrate S is transferred. Alternatively, for example, a camera fixedly installed at a position where the conveying path of the substrate S can be seen completely can be used to photograph the conveyed substrate S. Especially for the substrate S provided with a fine pattern, in order to prevent the pattern from collapsing, the surface of the substrate is not allowed to be exposed even for a short time. Therefore, in this case, it is preferable that a plurality of cameras are arranged on the conveying path, and the liquid film conveyed with the substrate S can be photographed at a short time interval. Alternatively, a mechanism for making the camera follow the movement of the substrate S can also be provided.

又,於中心機器人15,亦可進而設置用以將自搬送中之基板S落下之液體接住回收之構成。In addition, the center robot 15 may be further provided with a structure for catching and recovering the liquid dropped from the substrate S being transported.

以上,如例示具體之實施形態而說明,本發明可設為如下構成,例如,第1處理部於處理腔室內進行相對於基板之液膜形成,拍攝部具有設置於處理腔室內之第1相機。根據此種構成,能夠拍攝剛形成後之液膜,例如能夠以該圖像中包含之液膜為基準而評估以後之液膜之狀態。As described above, as an example of a specific embodiment, the present invention can be configured as follows. For example, the first processing section performs liquid film formation on the substrate in the processing chamber, and the imaging section has a first camera installed in the processing chamber . According to such a configuration, it is possible to photograph the liquid film immediately after formation, and for example, it is possible to evaluate the state of the liquid film thereafter based on the liquid film contained in the image.

又,例如,搬送機構亦可具有保持基板之保持構件,拍攝部亦可具有設置於搬送機構且與保持構件一起移動之第2相機。根據此種構成,於搬送中之各時刻可隨時拍攝,從而能夠不延誤地偵測基板上液膜之變化且採取必要之對策。In addition, for example, the transport mechanism may have a holding member that holds the substrate, and the imaging unit may have a second camera that is provided in the transport mechanism and moves together with the holding member. According to this structure, it is possible to take pictures at any time during transportation, so that changes in the liquid film on the substrate can be detected without delay and necessary countermeasures can be taken.

又,例如,控制部可於根據複數個圖像求出之差分超出預先設定之基準量之情形與未超出預先設定之基準量之情形之間,使自第1處理部至第2處理部之搬送所花費之時間不同。作為液膜變化之原因,有搬送中之振動或突然之加減速、液體成分之揮發等,且有藉由使搬送速度變化而能夠抑制液膜之變化之情形。In addition, for example, the control unit may set the difference between the first processing unit and the second processing unit between when the difference obtained from the plurality of images exceeds a preset reference amount and when it does not exceed the preset reference amount. The time taken for transportation is different. As the cause of the change of the liquid film, there are vibrations during transportation, sudden acceleration and deceleration, volatilization of liquid components, etc., and the change of the liquid film can be suppressed by changing the transportation speed.

又,例如,搬送機構具有對搬送之基板供給液體之液體供給機構,控制部可為如下構成,即,若根據複數個圖像求出之差分超出預先設定之基準量,則使液體供給機構對基板進行液體供給。根據此種構成,藉由視需要補充構成液膜之液體,可一面維持基板上之液膜,一面持續搬送。尤其於由揮發性較高之材料構成液膜之情形時,因搬送中之揮發而使液膜之厚度減少會成為基板表面露出之原因。藉由於搬送部設置補充液體之機構而能夠消除該問題。Also, for example, the transport mechanism has a liquid supply mechanism for supplying liquid to the substrate to be transported, and the control unit may be configured as follows: if the difference obtained from a plurality of images exceeds a preset reference amount, the liquid supply mechanism The substrate is supplied with liquid. According to this structure, by replenishing the liquid constituting the liquid film as needed, it is possible to maintain the liquid film on the substrate while continuing to transport. Especially when the liquid film is made of a material with higher volatility, the reduction in the thickness of the liquid film due to volatilization during transportation will cause the surface of the substrate to be exposed. This problem can be eliminated by providing a mechanism for replenishing liquid in the conveying part.

又,例如,控制部亦可構成為,若根據複數個圖像求出之差分超出預先設定之基準量,則搬送機構使基板返回至第1處理部,使第1處理部進行液膜之再形成。根據此種構成,於具備用以形成液膜所必要之構成之第1處理部進行液膜之再形成,故即便不另外設置用以於搬送中補充液體之構成,亦可防止搬送中液膜之破損。In addition, for example, the control unit may also be configured such that if the difference obtained from a plurality of images exceeds a preset reference amount, the transport mechanism returns the substrate to the first processing unit, and the first processing unit performs the liquid film reprocessing. form. According to this structure, the liquid film is re-formed in the first processing section equipped with the structure necessary to form the liquid film. Therefore, even if the structure for replenishing the liquid during transportation is not provided, it can prevent the liquid film from being transported. The damage.

又,例如,構成液膜之液體為有機溶劑,第2處理部亦可為對基板執行超臨界乾燥處理之構成。超臨界乾燥處理為了於高壓下實施而需專用之高壓環境。又,需要使用耐高壓之零件。因此,現實是於與能夠在常壓下實施之濕式處理不同之場所進行。此種情形時,需要進行濕式處理後之基板之搬送,藉由應用本發明,能夠在不使基板表面露出之情況下進行搬送。就與超臨界流體之親和性之觀點而言,較佳為使用有機溶劑進行液膜形成,但揮發性較高之有機溶劑於搬送中易損失。藉由本發明之應用而觀察液膜之狀態,由此於此種案例中亦能夠確實地以液膜覆蓋基板表面並進行搬送。In addition, for example, the liquid constituting the liquid film is an organic solvent, and the second processing unit may be configured to perform supercritical drying processing on the substrate. In order to perform supercritical drying under high pressure, a dedicated high-pressure environment is required. In addition, high-pressure resistant parts are required. Therefore, the reality is that it is performed in a place different from the wet process that can be performed under normal pressure. In this case, it is necessary to carry out the transfer of the substrate after wet processing. By applying the present invention, the transfer can be carried out without exposing the surface of the substrate. From the viewpoint of affinity with supercritical fluids, it is preferable to use organic solvents for liquid film formation, but organic solvents with higher volatility are easily lost during transportation. By observing the state of the liquid film by the application of the present invention, it is possible to reliably cover the surface of the substrate with the liquid film and carry it out in this case.

又,例如,複數個圖像亦可包含基板在由搬送機構開始搬送之前被拍攝到之搬送前圖像。根據此種構成,能夠把握於搬送開始時間點基板表面是否已被液膜適當地覆蓋,且能夠視狀況而採取必要之措施。例如控制部可基於與理想地擔載有液膜之狀態之基板對應之理想圖像與搬送前圖像之差,判斷是否開始搬送機構對基板之搬送。以此方式,能夠避免將表面未由液膜適當地覆蓋之狀態之基板供搬送。 [產業上之可利用性]In addition, for example, a plurality of images may include a pre-transport image taken before the substrate is transported by the transport mechanism. According to this configuration, it is possible to grasp whether the substrate surface is properly covered with the liquid film at the time of the start of the transportation, and it is possible to take necessary measures depending on the situation. For example, the control unit may determine whether to start the transfer of the substrate by the transfer mechanism based on the difference between the ideal image corresponding to the substrate in the state where the liquid film is ideally carried and the image before transfer. In this way, it is possible to avoid transporting the substrate whose surface is not properly covered by the liquid film. [Industrial availability]

本發明可應用於在將基板表面以液膜覆蓋之狀態下進行於執行互不相同之處理之處理部之間之基板之搬送的基板處理技術整體。例如,適宜於將濕式處理後之基板藉由超臨界乾燥處理而乾燥之處理。The present invention can be applied to the entire substrate processing technology in which the substrate is transported between processing sections that perform different processing in a state where the surface of the substrate is covered with a liquid film. For example, it is suitable for the process of drying the wet-processed substrate by supercritical drying process.

以上,按照特定之實施例說明了發明,但該說明並非意圖以限定性意義來解釋。若參照發明之說明,則與本發明之其他實施形態同樣地,所揭示之實施形態之各種變化例對於精通本領域技術者可明瞭。因此,認為隨附之申請專利範圍於不脫離發明之真正範圍之範圍內,包含該變化例或實施形態。Above, the invention has been described based on specific embodiments, but the description is not intended to be interpreted in a limited sense. If referring to the description of the invention, as with other embodiments of the present invention, various modifications of the disclosed embodiments will be clear to those skilled in the art. Therefore, it is considered that the scope of the attached patent application does not deviate from the true scope of the invention, and includes the modification or embodiment.

1:基板處理裝置 10:基板處理部 11A:濕式處理單元、基板處理單元(第1處理部) 11B:基板處理單元 12A:基板處理單元 13A:乾燥處理單元、基板處理單元(第2處理部) 13B:基板處理單元 14A:基板處理單元 15:中心機器人(搬送機構) 20:移載傳送部 21:容器保持部 22:移載傳送機器人 30:濕式處理部 31:基板保持部 32:防濺罩 33:處理液供給部 34:低表面張力液供給部 41:平台 42:旋轉支軸 43:高壓密封旋轉導入機構 44:流體分散構件 45:二氧化碳供給部 46:氮供給部 48:排出機構 90:控制單元(控制部) 91: CPU 92:記憶體 110:處理腔室(腔室) 111:擋板 120:處理腔室 121:擋板 130:高壓腔室 131:擋板 140:處理腔室 141:擋板 151:基台部 152:升降部 153:旋轉部 154:伸縮臂 155:手(保持構件) 156:支持構件 157: CCD相機(拍攝部、第2相機) 158:補充液噴嘴(液體供給機構) 221:基底部 222:多關節臂 223:手 311:旋轉夾盤 312:夾盤銷 313:旋轉支軸 314:旋轉機構 321:護罩 322:液體承接部 341:基底 342:旋動支軸 343:臂 344:噴嘴 351: CCD相機(拍攝部,第1相機) 352:照明光源 431:旋轉軸 432:旋轉機構 441:閉塞板 442:貫通孔 C:容器 LF:液膜 Lq:處理液 S:基板 Sa:上表面 S101:步驟 S102:步驟 S103:步驟 S104:步驟 S105:步驟 S106:步驟 S107:步驟 S108:步驟 S109:步驟 S110:步驟 S111:步驟 S121:步驟 S122:步驟 S123:步驟 S201:步驟 S202:步驟 S203:步驟 S204:步驟 S205:步驟 S206:步驟 S207:步驟 S208:步驟 S209:步驟 S221:步驟 S231:步驟 S241:步驟 S242:步驟 S243:步驟 TS:搬送空間1: Substrate processing equipment 10: Substrate Processing Department 11A: Wet processing unit, substrate processing unit (first processing section) 11B: Substrate processing unit 12A: Substrate processing unit 13A: Drying processing unit, substrate processing unit (second processing section) 13B: Substrate processing unit 14A: Substrate processing unit 15: Central robot (transfer mechanism) 20: Transfer and transfer department 21: Container holding part 22: Transfer robot 30: Wet treatment department 31: Board holding part 32: splash guard 33: Treatment liquid supply part 34: Low surface tension liquid supply part 41: Platform 42: Rotating fulcrum 43: High-pressure sealing rotary induction mechanism 44: fluid dispersion component 45: Carbon dioxide supply department 46: Nitrogen Supply Department 48: discharge mechanism 90: Control unit (control section) 91: CPU 92: memory 110: processing chamber (chamber) 111: bezel 120: processing chamber 121: bezel 130: high pressure chamber 131: Baffle 140: processing chamber 141: Baffle 151: Abutment 152: Lifting Department 153: Rotating part 154: Telescopic boom 155: Hand (holding member) 156: support member 157: CCD camera (photographing department, second camera) 158: Replenisher nozzle (liquid supply mechanism) 221: Base 222: Multi-joint arm 223: hand 311: Rotating Chuck 312: Chuck pin 313: Rotating Pivot 314: Rotating Mechanism 321: Guard 322: Liquid receiving part 341: Base 342: Rotating Pivot 343: arm 344: Nozzle 351: CCD camera (photographing department, the first camera) 352: Lighting source 431: Rotation Axis 432: Rotating Mechanism 441: occlusion plate 442: Through hole C: container LF: Liquid film Lq: Treatment liquid S: substrate Sa: upper surface S101: Step S102: Step S103: steps S104: Step S105: Step S106: Step S107: Step S108: Step S109: Step S110: Step S111: Step S121: Step S122: Step S123: Step S201: Step S202: Step S203: Step S204: Step S205: steps S206: Step S207: Step S208: Step S209: Step S221: Step S231: Step S241: Step S242: Step S243: Step TS: Transport space

圖1A係表示本發明之基板處理裝置之一實施形態之概略構成的圖。 圖1B係表示本發明之基板處理裝置之一實施形態之概略構成的圖。 圖2係表示中心機器人之構成及設置環境之圖。 圖3A係表示執行濕式處理之基板處理單元之圖。 圖3B係表示執行濕式處理之基板處理單元之圖。 圖4係表示執行超臨界乾燥處理之基板處理單元之圖。 圖5係表示該基板處理裝置之動作之流程圖。 圖6係表示移送處理之第1態樣之流程圖。 圖7係表示移送處理之第2態樣之流程圖。 圖8係表示移送處理之第3態樣之流程圖。 圖9係表示包含第3態樣之移送處理之基板處理動作之流程圖。 圖10係表示移送處理之第4態樣之流程圖。Fig. 1A is a diagram showing a schematic configuration of an embodiment of the substrate processing apparatus of the present invention. Fig. 1B is a diagram showing a schematic configuration of an embodiment of the substrate processing apparatus of the present invention. Figure 2 is a diagram showing the structure and installation environment of the central robot. Fig. 3A is a diagram showing a substrate processing unit that performs wet processing. FIG. 3B is a diagram showing a substrate processing unit performing wet processing. Fig. 4 is a diagram showing a substrate processing unit that performs supercritical drying processing. Fig. 5 is a flowchart showing the operation of the substrate processing apparatus. Fig. 6 is a flowchart showing the first aspect of the transfer process. Fig. 7 is a flowchart showing the second aspect of the transfer process. Fig. 8 is a flowchart showing the third aspect of the transfer process. FIG. 9 is a flowchart showing a substrate processing operation including the transfer processing of the third aspect. Fig. 10 is a flowchart showing the fourth aspect of the transfer process.

1:基板處理裝置 1: Substrate processing equipment

10:基板處理部 10: Substrate Processing Department

11A:基板處理單元 11A: Substrate processing unit

11B:基板處理單元 11B: Substrate processing unit

13A:基板處理單元 13A: Substrate processing unit

13B:基板處理單元 13B: Substrate processing unit

15:中心機器人 15: Center Robot

90:控制單元 90: control unit

91:CPU 91: CPU

92:記憶體 92: memory

101:間隔壁 101: next wall

110:處理腔室 110: processing chamber

111:擋板 111: bezel

130:高壓腔室 130: high pressure chamber

131:擋板 131: Baffle

151:基台部 151: Abutment

152:升降部 152: Lifting Department

153:旋轉部 153: Rotating part

154:伸縮臂 154: Telescopic boom

155:手 155: Hand

156:支持構件 156: support member

157:CCD相機 157: CCD camera

158:補充液噴嘴 158: Replenisher nozzle

S:基板 S: substrate

TS:搬送空間 TS: Transport space

Claims (10)

一種基板處理裝置,其具備: 第1處理部,其將液體供給至基板且以液膜覆蓋上述基板之表面; 搬送機構,其搬送擔載上述液膜之上述基板; 第2處理部,其接收藉由上述搬送機構搬送之上述基板且執行特定之處理; 拍攝部,其拍攝形成於上述基板之表面之上述液膜;及 控制部,其基於在自形成上述液膜起直至藉由上述搬送機構將上述基板搬入上述第2處理部之期間之互不相同的時刻分別由上述拍攝部所拍攝之複數個圖像之差,而控制上述搬送機構之動作。A substrate processing device includes: The first processing part, which supplies liquid to the substrate and covers the surface of the substrate with a liquid film; A transport mechanism that transports the above-mentioned substrate carrying the above-mentioned liquid film; The second processing unit, which receives the substrate transported by the transport mechanism and performs specific processing; A photographing section which photographs the liquid film formed on the surface of the substrate; and The control unit is based on the difference between the plural images taken by the imaging unit at different times from the formation of the liquid film until the time when the substrate is transported into the second processing unit by the transport mechanism, And control the movement of the above-mentioned conveying mechanism. 如請求項1之基板處理裝置,其中上述第1處理部於處理腔室內進行對上述基板之上述液膜形成, 上述拍攝部具有設置於上述處理腔室內之第1相機。The substrate processing apparatus of claim 1, wherein the first processing section performs the liquid film formation on the substrate in the processing chamber, The imaging unit has a first camera installed in the processing chamber. 如請求項1之基板處理裝置,其中上述搬送機構具有保持上述基板之保持構件, 上述拍攝部具有設置於上述搬送機構且與上述保持構件一起移動之第2相機。The substrate processing apparatus of claim 1, wherein the transport mechanism has a holding member for holding the substrate, The imaging unit has a second camera installed in the conveying mechanism and moving together with the holding member. 如請求項1至3中任一項之基板處理裝置,其中上述控制部在由上述複數個圖像求出之差分超出預先設定之基準量之情形與未超出預先設定之基準量之情形之間,使自上述第1處理部搬送至上述第2處理部所花費之時間不同。Such as the substrate processing apparatus of any one of claims 1 to 3, wherein the control section is between when the difference obtained from the plurality of images exceeds a preset reference amount and when the difference does not exceed the preset reference amount , The time taken from the first processing unit to the second processing unit is different. 如請求項1至3中任一項之基板處理裝置,其中上述搬送機構具有液體供給機構,該液體供給機構將上述液體供給至所要搬送之上述基板, 上述控制部於由上述複數個圖像求出之差分超出預先設定之基準量時,使上述液體供給機構進行對上述基板之上述液體供給。The substrate processing apparatus according to any one of claims 1 to 3, wherein the transport mechanism has a liquid supply mechanism that supplies the liquid to the substrate to be transported, The control unit causes the liquid supply mechanism to supply the liquid to the substrate when the difference obtained from the plurality of images exceeds a preset reference amount. 如請求項1至3中任一項之基板處理裝置,其中上述控制部於由上述複數個圖像求出之差分超出預先設定之基準量時,使上述搬送機構將上述基板返回至上述第1處理部,且使上述第1處理部進行上述液膜之再形成。The substrate processing apparatus of any one of claims 1 to 3, wherein the control section causes the transport mechanism to return the substrate to the first when the difference obtained from the plurality of images exceeds a preset reference amount Processing part, and allowing the first processing part to reform the liquid film. 如請求項1至3中任一項之基板處理裝置,其中上述液體為有機溶劑,上述第2處理部對上述基板執行超臨界乾燥處理。The substrate processing apparatus according to any one of claims 1 to 3, wherein the liquid is an organic solvent, and the second processing unit performs supercritical drying processing on the substrate. 如請求項1至3中任一項之基板處理裝置,其中上述複數個圖像包含上述基板在由上述搬送機構開始搬送之前被拍攝之搬送前圖像。The substrate processing apparatus according to any one of claims 1 to 3, wherein the plurality of images includes a pre-transport image of the substrate that is taken before the transportation by the transportation mechanism starts. 如請求項8之基板處理裝置,其中上述控制部基於與理想地擔載上述液膜之狀態之上述基板對應之理想圖像、與上述搬送前圖像之差,判斷是否開始藉由上述搬送機構之上述基板搬送。The substrate processing apparatus of claim 8, wherein the control unit determines whether to start the transfer mechanism based on the difference between the ideal image corresponding to the substrate in the state where the liquid film is ideally supported and the image before the transfer The above-mentioned substrate transportation. 一種基板處理裝置之搬送控制方法,該基板處理裝置具有:第1處理部,其將液體供給至基板且以液膜覆蓋上述基板之表面;第2處理部,其接收擔載上述液膜之上述基板且執行特定之處理;及搬送機構,其於上述第1處理部與上述第2處理部之間搬送上述基板;且 該基板處理裝置之搬送控制方法係於自形成上述液膜起直至將上述基板搬入上述第2處理部之期間之互不相同的時刻分別拍攝上述液膜,且基於所拍攝之複數個圖像之差,而控制上述搬送機構之動作。A method for conveying control of a substrate processing apparatus, the substrate processing apparatus having: a first processing section that supplies a liquid to a substrate and covers the surface of the substrate with a liquid film; and a second processing section that receives the liquid film carrying the liquid film. The substrate performs specific processing; and a transport mechanism that transports the substrate between the first processing section and the second processing section; and The transport control method of the substrate processing apparatus is to photograph the liquid film at different times from the formation of the liquid film until the time when the substrate is carried into the second processing section, and to take a picture of the liquid film based on the plural images taken. , And control the action of the above-mentioned conveying mechanism.
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CN110663101B (en) * 2017-05-24 2023-08-18 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
JP6953286B2 (en) * 2017-11-09 2021-10-27 東京エレクトロン株式会社 Substrate processing equipment, substrate processing method and storage medium
JP2020017618A (en) * 2018-07-25 2020-01-30 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method

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