TW202036198A - Temperature control device, temperature control method, and inspection apparatus - Google Patents
Temperature control device, temperature control method, and inspection apparatus Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
Description
本揭露係關於一種溫度控制裝置、溫度控制方法以及檢查裝置。 This disclosure relates to a temperature control device, a temperature control method, and an inspection device.
半導體製造程序中,係將具有既定電路圖案之大量電子元件形成在半導體晶圓(以下僅記為晶圓)上。所形成之電子元件會進行電氣特性等的檢查,而區別出良品與不良品。電子元件之檢查係例如在將各電子元件分割前的晶圓狀態下,使用檢查裝置來加以進行。 In the semiconductor manufacturing process, a large number of electronic components with a predetermined circuit pattern are formed on a semiconductor wafer (hereinafter only referred to as wafer). The formed electronic components will be inspected for electrical characteristics, etc., to distinguish good products from defective products. The inspection of electronic components is performed, for example, using an inspection device in a wafer state before each electronic component is divided.
電子元件之檢查裝置係具備:具有多數針狀之探針的探針卡;載置晶圓之載置台;以及測試台(參照專利文獻1)。此檢查裝置係讓探針卡之各探針接觸於會對應於電子元件之電極來設置的電極接點或銲錫凸塊,而使來自電子元件之訊號朝測試台傳遞,以檢查電子元件之電氣特性。又,專利文獻1之檢查裝置在檢查電子元件之電氣特性時,為了再現該電子元件之實際裝設環境,係具有藉由載置台內之冷媒流道或加熱器來控制載置台溫度之溫度控制裝置。
The electronic component inspection device is equipped with: a probe card with a large number of needle-shaped probes; a mounting table on which a wafer is placed; and a test table (refer to Patent Document 1). This inspection device allows the probes of the probe card to contact the electrode contacts or solder bumps that are set corresponding to the electrodes of the electronic components, so that the signals from the electronic components are transmitted to the test bench to inspect the electrical of the electronic components characteristic. In addition, when inspecting the electrical characteristics of electronic components, the inspection device of
又,專利文獻2記載有使用冷卻水與熱電轉換模組,並以滑動模式(sliding mode)控制來進行晶圓之溫度控制。
In addition,
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1:日本特開平10-135315號公報 Patent Document 1: Japanese Patent Application Laid-Open No. 10-135315
專利文獻2:日本特開2002-318602號公報 Patent Document 2: Japanese Patent Application Publication No. 2002-318602
本揭露係提供一種即便產生干擾,仍可以良好的控制性來控制溫度控制對象之溫度的溫度控制裝置、溫度控制方法以及檢查裝置。 The present disclosure provides a temperature control device, a temperature control method, and an inspection device that can control the temperature of a temperature control object with good controllability even if interference occurs.
本揭露一態樣相關之溫度控制裝置係進行溫度控制對象物之溫度控制的溫度控制裝置;具備:加熱機構,係具有會加熱該溫度控制對象物之加熱源;冷卻機構,係具有會冷卻該溫度控制對象物之冷卻源;以及溫度控制器,係控制該加熱源與該冷卻源;該溫度控制器係以該溫度控制對象物之溫度測量值為控制對象,並具有:滑動模式(sliding mode)控制器,係將朝該加熱源投入之功率作為操作量;冷卻模式控制器,係將朝該冷卻源投入之功率作為操作量;以及切換控制器,係在為該滑動模式控制器之輸出的線性項與非線性項中,藉由該非線性項之數值來決定是否直接將該滑動模式控制器之輸出作為第1操作量而輸出至該加熱源,或是不使用該滑動模式控制器之輸出,而將該冷卻模式控制器之輸出作為第2操作量來加以使用。 The temperature control device related to one aspect of the present disclosure is a temperature control device that performs temperature control of the temperature control object; it has a heating mechanism that has a heating source that can heat the temperature control object; a cooling mechanism that can cool the object The cooling source of the temperature control object; and the temperature controller, which controls the heating source and the cooling source; the temperature controller takes the temperature measurement of the temperature control object as the control object, and has: a sliding mode ) The controller uses the power input to the heating source as the operating variable; the cooling mode controller uses the power input to the cooling source as the operating variable; and the switching controller is the output of the sliding mode controller In the linear and nonlinear terms, the value of the nonlinear term is used to determine whether to directly output the output of the sliding mode controller as the first operating variable to the heating source, or not to use the sliding mode controller Output, and use the output of the cooling mode controller as the second operation amount.
本揭露另一態樣相關之溫度控制裝置係進行溫度控制對象物之溫度控制的溫度控制裝置;具備:加熱機構,係具有會加熱該溫度控制對象物之加熱源;冷卻機構,係具有會冷卻該溫度控制對象物之冷卻源;以及溫度控制器,係控制該加熱源與該冷卻源;該溫度控制器係以該溫度控制對象物之溫度測量值為控制對象,並具有:滑動模式(sliding mode)控制器,係將朝該加熱源投入之功率作為操作量;冷卻模式控制器,係將朝該冷卻源投入之功率作為操作量;以及切換控制器,係在為該滑動模式控制器之輸出的線性項與非線性項中,藉由該非線性項之數值來決定是否直接將該滑動模式控制器之輸出作為第1操 作量而輸出至該加熱源,或是將該滑動模式控制器之輸出與該冷卻模式控制器之輸出相加者作為第2操作量來加以使用。 The temperature control device related to another aspect of the present disclosure is a temperature control device that performs temperature control of the temperature control object; it has a heating mechanism that has a heating source that can heat the temperature control object; a cooling mechanism that can cool The cooling source of the temperature control object; and a temperature controller that controls the heating source and the cooling source; the temperature controller takes the temperature measurement of the temperature control object as the control object, and has: a sliding mode (sliding mode) mode) controller, which regards the power input to the heating source as the operating quantity; the cooling mode controller, which regards the power input to the cooling source as the operating quantity; and the switching controller, which is the sliding mode controller In the output linear term and nonlinear term, the value of the nonlinear term is used to determine whether to directly use the output of the sliding mode controller as the first operation The output to the heating source or the addition of the output of the sliding mode controller and the output of the cooling mode controller is used as the second operation amount.
根據本揭露,便可提供一種即便產生干擾,仍可以良好的控制性來控制溫度控制對象之溫度的溫度控制裝置、溫度控制方法以及檢查裝置。 According to the present disclosure, it is possible to provide a temperature control device, a temperature control method, and an inspection device that can control the temperature of the temperature control object with good controllability even if interference occurs.
1:檢查裝置 1: Inspection device
2:檢查部 2: Inspection Department
3:裝載部 3: Loading department
4:測試台 4: Test bench
10:台座 10: Pedestal
12:探針卡 12: Probe card
12a:探針 12a: Probe
13:介面 13: Interface
15:控制部 15: Control Department
20:溫度控制裝置 20: Temperature control device
30、30’:溫度控制器 30, 30’: Temperature controller
31a:溫度感應器 31a: Temperature sensor
32a:冷媒流道 32a: refrigerant flow path
40:加熱機構 40: heating mechanism
41:LED 41: LED
50:冷卻機構 50: Cooling mechanism
52:冷卻配管 52: Cooling piping
53:可變流量閥 53: Variable flow valve
54:高速閥 54: high speed valve
60:溫度測量電路 60: Temperature measurement circuit
71:滑動模式控制器 71: Sliding Mode Controller
72:冷卻模式控制器 72: Cooling mode controller
73、73’:切換控制器 73, 73’: Switch controller
74:廠模型 74: Factory model
77:加算器 77: adder
D:電子元件(溫度測量對象) D: Electronic components (temperature measurement object)
W:晶圓 W: Wafer
圖1係顯示第1實施形態相關之檢查裝置的概略構成的立體圖。 Fig. 1 is a perspective view showing a schematic configuration of an inspection device related to the first embodiment.
圖2係以剖面來顯示圖1之檢查裝置一部分的前視圖。 Fig. 2 is a front view showing a part of the inspection device of Fig. 1 in section.
圖3係概略性地顯示作為被檢查體的基板之晶圓的構成之俯視圖。 Fig. 3 is a plan view schematically showing the structure of a wafer as a substrate of an object to be inspected.
圖4係概略性地顯示台座之上部構成及溫度控制裝置的剖面圖。 Fig. 4 is a cross-sectional view schematically showing the structure of the upper part of the pedestal and the temperature control device.
圖5係概略性地顯示加熱機構之構成的俯視圖。 Fig. 5 is a plan view schematically showing the structure of the heating mechanism.
圖6係概略性地顯示電子元件之溫度測量用電路的構成之圖式。 Fig. 6 is a diagram schematically showing the structure of a circuit for temperature measurement of an electronic component.
圖7係用以說明滑動模式控制之圖式。 Fig. 7 is a diagram for explaining the sliding mode control.
圖8係顯示第1實施形態相關之檢查裝置中的溫度控制器之控制塊的塊狀圖。 Fig. 8 is a block diagram showing the control block of the temperature controller in the inspection device according to the first embodiment.
圖9係顯示圖8之溫度控制器中的滑動模式控制器內部的塊狀圖。 FIG. 9 is a block diagram showing the interior of the sliding mode controller in the temperature controller of FIG. 8.
圖10係顯示圖9之滑動模式控制器的非線性輸入部的塊狀圖。 Fig. 10 is a block diagram showing the nonlinear input part of the sliding mode controller of Fig. 9.
圖11係顯示圖8之溫度控制器中的冷卻模式控制器及切換控制器之構成及該等訊號的收授的塊狀圖。 FIG. 11 is a block diagram showing the composition of the cooling mode controller and the switching controller in the temperature controller of FIG. 8 and the reception and transmission of these signals.
圖12係顯示廠模型內部之塊狀圖。 Figure 12 shows the block diagram inside the factory model.
圖13係顯示第2實施形態相關之檢查裝置中的溫度控制器之控制塊的塊狀圖。 Fig. 13 is a block diagram showing the control block of the temperature controller in the inspection device according to the second embodiment.
圖14係顯示圖13之溫度控制器中的冷卻模式控制器及切換控制器之內部及該等訊號之收授的塊狀圖。 FIG. 14 is a block diagram showing the internals of the cooling mode controller and the switching controller in the temperature controller of FIG. 13 and the reception of these signals.
圖15係在藉由滑動模式控制來進行晶片之溫度控制的情況下發熱干擾為150W時之模擬結果的圖式。 FIG. 15 is a diagram of the simulation result when the heat interference is 150W when the temperature control of the chip is performed by sliding mode control.
圖16係在藉由滑動模式控制來進行晶片之溫度控制的情況下發熱干擾為300W時之模擬結果的圖式。 Fig. 16 is a graph of the simulation result when the heat interference is 300W when the temperature control of the chip is performed by sliding mode control.
圖17係在藉由滑動模式控制來進行晶片之溫度控制的情況下發熱干擾為450W時之模擬結果的圖式。 FIG. 17 is a diagram of the simulation result when the heat interference is 450W when the temperature control of the chip is performed by sliding mode control.
圖18係在藉由第1實施形態之控制來進行晶片之溫度控制的情況下發熱干擾為150W時之模擬結果的圖式。 FIG. 18 is a graph of simulation results when the heat interference is 150W when the temperature control of the chip is performed by the control of the first embodiment.
圖19係在藉由第1實施形態之控制來進行晶片之溫度控制的情況下發熱干擾為300W時之模擬結果的圖式。 FIG. 19 is a graph of the simulation result when the heat interference is 300 W when the temperature control of the chip is performed by the control of the first embodiment.
圖20係在藉由第1實施形態之控制來進行晶片之溫度控制的情況下發熱干擾為450W時之模擬結果的圖式。 FIG. 20 is a graph of simulation results when the heat interference is 450W when the temperature control of the chip is performed by the control of the first embodiment.
圖21係在藉由第2實施形態之控制來進行晶片之溫度控制的情況下發熱干擾為150W時之模擬結果的圖式。 FIG. 21 is a graph of simulation results when the heat interference is 150W when the temperature control of the chip is performed by the control of the second embodiment.
圖22係在藉由第2實施形態之控制來進行晶片之溫度控制的情況下發熱干擾為300W時之模擬結果的圖式。 Fig. 22 is a graph of simulation results when the heat interference is 300W when the temperature control of the chip is performed by the control of the second embodiment.
圖23係在藉由第2實施形態之控制來進行晶片之溫度控制的情況下發熱干擾為450W時之模擬結果的圖式。 FIG. 23 is a graph of the simulation result when the heat interference is 450W when the temperature control of the chip is performed by the control of the second embodiment.
圖24係將發熱干擾為150W時之第1實施形態的模擬結果放大而顯示的圖式。 Fig. 24 is a diagram showing an enlarged simulation result of the first embodiment when the heat interference is 150W.
圖25係將發熱干擾為150W時之第2實施形態的模擬結果放大而顯示的圖式。 FIG. 25 is a diagram showing an enlarged simulation result of the second embodiment when the heat interference is 150W.
圖26係將發熱干擾為300W時之第1實施形態的模擬結果放大而顯示的圖式。 Fig. 26 is a diagram showing an enlarged simulation result of the first embodiment when the heat interference is 300W.
圖27係將發熱干擾為300W時之第2實施形態的模擬結果放大而顯示的圖式。 Fig. 27 is a diagram showing an enlarged simulation result of the second embodiment when the heat interference is 300W.
圖28係將發熱干擾為450W時之第1實施形態的模擬結果放大而顯示的圖式。 Fig. 28 is a diagram showing an enlarged simulation result of the first embodiment when the heat interference is 450W.
圖29係將發熱干擾為450W時之第2實施形態的模擬結果放大而顯示的圖式。 Fig. 29 is a diagram showing an enlarged simulation result of the second embodiment when the heat interference is 450W.
以下,便參照添附圖式就實施形態來加以說明。 Hereinafter, the embodiment will be described with reference to the attached drawings.
<第1實施形態> <First Embodiment>
首先,就第1實施形態來加以說明。 First, the first embodiment will be described.
圖1係顯示第1實施形態相關之檢查裝置的概略構成的立體圖,圖2係以剖面來顯示圖1之檢查裝置一部分的前視圖。 Fig. 1 is a perspective view showing a schematic configuration of an inspection device related to the first embodiment, and Fig. 2 is a front view showing a part of the inspection device of Fig. 1 in cross section.
如圖1及圖2所示,檢查裝置1係進行被形成在作為被檢查體之基板的晶圓W之複數電子元件的各電氣特性的檢查者,具備:檢查部2;裝載部3;以及測試台4。
As shown in FIGS. 1 and 2, the
檢查部2係具有內部呈空洞之框體11,框體11內係具有會吸附固定有檢查對象之晶圓W的台座10。又,台座10係構成為會藉由移動機構(未圖示)
來自由移動於水平方向及垂直方向。台座10下方係設置有控制台座之溫度的溫度控制裝置20。關於溫度控制裝置20會在之後詳細說明。
The
檢查部2中之該台座10上方係以對向於該台座10的方式來配置有探針卡12。探針卡12係具有為接觸子之複數探針12a。又,探針卡12會透過介面13來連接於測試台4。在各探針12a接觸於晶圓W之各電子元件的電極時,各探針12a會從測試台4透過介面13來朝電子元件供給電力,或是將來自電子元件之訊號透過介面13來朝測試台4傳遞。
A
裝載部3係具有框體14,框體14內係配置有為收納有晶圓W之搬送容易的FOUP(未圖示)。又,裝載部3係具有搬送機構(未圖示),而藉由搬送機構來取出被收納於FOUP的晶圓W並朝檢查部2之台座10搬送。又,會藉由搬送裝置來搬送電氣特性之檢查結束後的台座10上之晶圓W,而朝FOUP收納。
The
又,裝載部3之框體14內係設置有:控制部15,係進行檢查對象之電子元件的溫度控制等之各種控制;以及電位差測量單元16,係測量各電子元件中之電位差生成電路(省略圖示)的電位差。電位差生成電路係例如二極體、電晶體或電抗。電位差測量單元16會被連接於介面13,而取得會朝上述電位差生成電路所對應之2個電極接觸的2個探針12a間的電位差,而將所取得之電位差朝控制部15傳遞。關於介面13中之各探針12a及從電位差測量單元16之配線的連接構造會在之後詳述。
In addition, the
控制部15係具有會被包含在溫度控制裝置20之溫度控制器30,溫度控制器30會控制下述加熱機構及冷卻機構。另外,控制部15及電位差測量單元16係可被設置在檢查部2之框體11內,又,電位差測量裝置16亦可被設置在探針卡12。
The
檢查部2之框體11係設置有會構成控制部15一部分的使用者介面部18。使用者介面部18係用以對使用者顯示資訊或讓使用者輸入指者,例如由觸控面板或鍵盤等的輸入部與液晶顯示器等的顯示部所構成。
The
測試台4係具有會將搭載有電子元件之主機板的電路構成一部分再現的測試板(省略圖示)。測試板係被連接於會基於來自電子元件之訊號來判斷該電子元件之良莠的測試電腦17。測試台4中係可藉由取代上述測試板來再現複數種的主機板之電路構成。
The test stand 4 has a test board (not shown) that reproduces a part of the circuit configuration of the motherboard on which electronic components are mounted. The test board is connected to a
另外,探針卡12、介面13、測試台4係構成檢查機構。
In addition, the
在檢查電子元件之電氣特性時,測試電腦17會將數據朝透過各探針12a來與電子元件連接之測試板傳遞。然後,測試電腦17會基於來自該測試板之電氣訊號,來判斷所傳遞之數據是否有藉由該測試板來被正確地處理。
When checking the electrical characteristics of electronic components, the
作為被檢查體之基板的晶圓W如圖3所示,係具有:複數電子元件D,係藉由對略圓板狀之矽基板施加蝕刻處理或配線處理來於其表面隔有既定間隔而被加以形成。電子元件D之表面係形成有電極E,該電極E會被電性連接在該電子元件D內部之電路元件。藉由朝電極E施加電壓,便可使電流流通於各電子元件D內部之電路元件。 As shown in FIG. 3, the wafer W as the substrate of the object to be inspected has a plurality of electronic components D, which are separated by predetermined intervals on the surface by applying etching or wiring processing to a substantially disc-shaped silicon substrate Be formed. An electrode E is formed on the surface of the electronic component D, and the electrode E is electrically connected to the circuit component inside the electronic component D. By applying a voltage to the electrode E, a current can flow through the circuit elements inside each electronic element D.
接著,便使用圖4就台座10及溫度控制裝置20來加以說明。圖4係概略性地顯示台座10之上部構成及溫度控制裝置20的剖面圖。
Next, the
如圖4所示,台座10係具有有底構件32與蓋構件31。蓋構件31會透過密封環33來被安裝在有底構件32上。晶圓W會被吸附保持在蓋構件31上。
As shown in FIG. 4, the
蓋構件31係形成為圓板狀,且例如以SiC所構成。SiC之熱傳導率及楊式率會較高。又,相對於來自下述加熱機構40之LED41的光線之吸收效率
亦會較高,而可藉由來自加熱機構40之光線來有效率地加熱蓋構件31。又,SiC係可在成形於生胚薄板(green sheet)後燒結來加以形成,而能減少加工量。
The
蓋構件31上面係形成有用以吸附晶圓W之吸附孔(省略圖示)。又,蓋構件31係在俯視觀察下會互相分離的位置埋設有複數溫度感應器31a。
The upper surface of the
有底構件32係形成為與蓋構件31略相同直徑之圓板狀,並相對於來自下述LED之光線的波長而以透明的材料所構成。有底構件32上部係形成有用以流通冷媒之溝,該溝會被蓋構件31所覆蓋而形成冷媒流道32a。亦即,台座10係於內部具有冷媒流道32a。
The bottomed
溫度控制裝置20係具有加熱機構40、冷卻機構50以及溫度控制器30。溫度控制裝置20會藉由加熱機構40之加熱以及冷卻機構50之冷卻,並以使台座10上之晶圓W所形成的檢查對象之電子元件D的溫度穩定在目標溫度之方式來進行控制。
The
加熱機構40會構成為光照射機構,而藉由將光線照射至台座10之蓋構件31而加熱該蓋構件31,來加熱晶圓W,以加熱晶圓W上所形成之電子元件D。
The
加熱機構40係以會對向於台座10之晶圓W載置面相反側的面,亦即有底構件32之下面的方式來加以配置。加熱機構40係具有會作為加熱源來朝向晶圓W照射光線的複數LED41。具體而言,加熱機構40係具有將會使複數LED41被單元化後之LED單元43複數搭載於基底42表面的構成。加熱機構40之LED單元43如圖5所示,係具有:單元43a,係以對應於電子元件D(參照圖3)的方式來配列,且俯視觀察下為正方形狀;以及單元43b,係設置於其外周,且俯視
觀察下為非正方形狀。藉由單元43a及43b來覆蓋基底42之略整面,而可從LED單元43之LED41來將光線至少照射至蓋構件31中搭載有晶圓W之部分整體。
The
各LED41會射出例如近紅外光。從LED41所射出之光線(以下,亦稱為「LED光」。)會穿透由光穿透構件所構成的台座10之有底構件32。流通於冷媒流道32a的冷媒係由會讓來自LED41之光線穿透的材料所構成,穿透過有底構件32之光線會穿透流通於冷媒流道32a的冷媒,而入射至蓋構件31。在來自LED41之光線為近紅外光之情況,可使用聚碳酸酯、石英、聚氯乙烯、壓克力樹脂或玻璃來作為構成有底構件32之光穿透構件。該等材料可易於加工或成形。
Each
加熱機構40中,入射至台座10之載置有晶圓W的蓋構件31之LED光係以LED單元43為單位來加以控制。從而,加熱機構40係可僅將LED光照射至蓋構件31之任意位置,或是讓照射之光線的強度在任意位置與其他位置有所不同。
In the
冷卻機構50係具有冷卻單元51、冷媒配管52、可變流量閥53以及高速閥54。冷卻單元51會儲存冷媒,並將冷媒溫度控制在既定溫度。作為冷媒係可使用例如能讓從LED41所照射之光線穿透且為液體之水。冷媒配管52係連接於有底構件32側部所設置之供給口32b與排出口32c,且連接於冷卻單元51。冷卻單元51內之冷媒會藉由設置於冷媒配管52之泵(未圖示)並透過冷媒配管52來循環於冷媒流道32a。可變流量閥53會被設置於冷媒配管52之冷卻單元51下游側,高速閥54係在冷卻單元51下游側被設置於會將可變流量閥53分流之分流配管52a。可變流量閥53係可設定流量,並以所設定之流量的固定量來供給冷媒。又,高速閥54係基於在下述滑動控制時的非線性增益項來高速進行開閉(開啟、關閉),而可在高速下來進行流通於分流配管52a的冷媒之供給/停止。
The
溫度控制器30會基於電子元件D之溫度的測量結果,而藉由加熱機構40及冷卻機構50,並以使電子元件D之溫度成為既定溫度的方式來控制台座之溫度。
Based on the measurement result of the temperature of the electronic component D, the
電子元件D之溫度係藉由溫度測量用電路60來加以測量。圖6係概略性地顯示電子元件D之溫度測量用電路60的構成之圖式。
The temperature of the electronic component D is measured by the
如圖6所示,各探針12a會藉由介面13所配置之複數配線61來連接於測試台4。在將電子元件D中之電位差生成電路(例如二極體)的2個電極E所接觸的2個探針12a與測試台4連接的2個配線61係分別設置有繼電器62。又,繼電器62亦可連接於電位差測量單元16之配線63。
As shown in FIG. 6, each
亦即,各繼電器62係可將各電極E之電位朝測試台4及電位差測量單元16的任一者切換而進行傳遞。例如,在進行電子元件D之電氣特性的檢查時,於朝各電極E施加實際裝設時之電壓後,便會在既定時間點將各電極E之電位朝電位差測量單元16傳遞。已知在上述電位差生成電路中,於流通既定電流時所產生的電位差會因溫度而有所不同。從而,便可基於電子元件D之電位差生成電路的電位差,亦即,電位差生成電路的2個電極E(探針12a)間的電位差來在檢查中即時測量電子元件D之溫度。
That is, each
亦即,溫度測量用電路60係由電子元件D中之電位差生成電路、其2個電極所接觸的2個探針12a、連接於該等的2個配線61、繼電器62、配線63以及電位差測量單元16所構成。
That is, the
另外,電子元件D之溫度的測量方法並不限於上述者,亦可為其他方法。 In addition, the method for measuring the temperature of the electronic component D is not limited to the above, and may be other methods.
溫度控制器30係基於上述般之電子元件D的溫度測量結果,並藉由將朝為加熱源之LED41投入之功率(電流值輸出)作為操作量的滑動模式控制,以及將朝為冷卻源之高速閥投入之功率(亦即高速閥之開閉訊號)作為操作量的冷卻模式控制來進行溫度控制。
The
滑動模式控制係以在狀態空間內之預設切換相平面(切換面)拘束狀態的方式來在切換相平面的上下切換控制之控制方法。在控制對象之初期狀態位在切換相平面外的情況,會使控制對象之狀態在有限時間抵達、拘束在切換相平面(抵達模式)。在控制對象之狀態抵達至切換相平面後,便會在切換相平面來讓狀態滑動,並朝目標值收斂(滑動模式)。滑動模式控制之控制輸入u係線性項(線性控制操作量)u1與非線性項(非線性控制操作量)un1之和,並可以下數學式來加以表示 The sliding mode control is a control method of switching control on the upper and lower switching phase planes by the way of the preset switching phase plane (switching surface) in the state space. In the case that the initial state of the control object is outside the switching phase plane, the state of the control object will arrive in a limited time and be constrained in the switching phase plane (arrival mode). After the state of the control object reaches the switching phase plane, it will slide the state on the switching phase plane and converge towards the target value (sliding mode). The control input u of the sliding mode control is the sum of the linear term (linear control operation quantity) u1 and the non-linear term (non-linear control operation quantity) un1, and can be expressed by the following mathematical formula
u=-(SB)-1SAx-K(SB)-1.sgn(σ)=-(SB)-1{SAx+K.sgn(σ)} u=-(SB) -1 SAx-K(SB) -1 . sgn(σ)=-(SB) -1 {SAx+K. sgn(σ)}
σ=Sx σ=Sx
SAx為線性項,K.sgn(σ)為非線性項。A、B為狀態方程式之行列式,S與K為控制參數。函數sgn係表示不連續函數,sgn(σ)為滑動模式之切換函數。切換相平面係可以線性控制之框架來加以設計,滑動模式中,係在切換相平面上藉由非線性項來在極短時間來回於圖7所示的區域II與區域I並在切換相平面上移動。亦即,滑動模式中,線性項(線性控制操作量)係使控制系統之狀態在切換相平面上將控制誤差成為最小,非線性項則是在存在有模型化誤差或不確定干擾時使控制系統之狀態朝向切換相平面。 SAx is a linear term, K. sgn(σ) is a nonlinear term. A and B are the determinants of the state equation, and S and K are the control parameters. The function sgn is a discontinuous function, and sgn(σ) is the switching function of the sliding mode. The switching phase plane can be designed in the framework of linear control. In the sliding mode, the switching phase plane uses a nonlinear term to go back and forth between the area II and the area I shown in Figure 7 in a very short time and switch the phase plane. Move up. That is, in the sliding mode, the linear term (linear control operation amount) minimizes the control error in the switching phase plane of the state of the control system, and the nonlinear term makes the control when there are modeling errors or uncertain disturbances. The state of the system is towards the switching phase plane.
圖8係顯示溫度控制器30之控制塊的圖式。溫度控制器30係具有滑動模式控制器17、冷卻模式控制器72、切換控制器73以及廠模型74。
FIG. 8 is a diagram showing the control block of the
滑動模式控制器71係將朝加熱機構40之LED41投入之功率(作為電流值為輸出)作為操作量來輸出,而進行溫度控制。滑動模式控制器71中,如圖9所示,係輸入溫度檢出訊號x,而藉由線性項(線性增益項)與在非線性輸入部75所生成之非線性項(非線性增益項)來形成控制輸入u。非線性輸入部75如圖10所示,藉由切換函數σ、SWgain:k、SWita:η來生成非線性輸入(非線性項):un1。un1係以下數學式來加以表示。
The
un1=-k.σ/(|σ|+η) un1=-k. σ/(|σ|+η)
η係顫動抑制項。由於非線性輸入(非線性項):un1係切換頻率為無限,故狀態量在切換相平面附近會顫動(高頻振動)。因此,便會使用η來抑制顫動而使輸入平滑化。 η is the vibration suppression item. Due to the non-linear input (non-linear term): the switching frequency of the un1 system is infinite, so the state quantity will vibrate (high frequency vibration) near the switching phase plane. Therefore, η is used to suppress chattering and smooth the input.
圖11係顯示冷卻模式控制器72及切換控制器73之內部的塊狀圖。
FIG. 11 is a block diagram showing the inside of the
冷卻模式控制器72係將朝為冷卻源之高速閥54投入之功率(高速閥54之開閉訊號)作為操作量來進行冷卻控制。藉此,來控制被供給至台座10之冷媒流道32a的冷媒之量,以將電子元件D進行溫度控制。冷卻模式控制器72之輸出係基於冷媒流量及吸熱係數並藉由吸熱模型來加以計算。雖圖11中係將吸熱係數表示為-0.4,但此不過是一範例,其數值係可根據電子元件D等而變化。
The cooling
切換控制器73係使用滑動模式控制器之非線性項un1的數值來作為切換訊號。亦即,切換控制器73係藉由非線性項un1的數值來決定是否直接使用滑動模式控制器71之輸出(控制輸出),或是不使用滑動模式控制器71之輸出,而將冷卻模式控制器72之輸出作為第2操作量來加以使用。
The switching
所謂直接使用滑動模式控制器71之輸出(控制輸入)係指將滑動模式控制器71之輸出作為第1操作量來輸出至為加熱源之LED41。
The so-called direct use of the output (control input) of the sliding
所謂將冷卻模式控制器72之輸出作為第2操作量來加以使用係指將為冷卻模式控制器72之冷卻源的高速閥之輸出作為第2操作量來加以使用。
The use of the output of the
具體而言,切換控制器73在非線性項un1之數值為正(切換相平面之一邊側;圖7之區域I)之情況,便會直接將滑動模式控制器71之輸出作為第1操作量來輸出至LED41。又,在非線性項un1之數值為負(切換相平面之另邊側;圖7之區域II)之情況,便會將為冷卻模式控制器72之冷卻源的高速閥之輸出(高速閥之開閉訊號)作為第2操作量來加以使用。高速閥之開閉時間為0.1sec以下的高速,高速閥54係可追隨非線性項un1的高速切換來加以開閉,而可高控制性地進行溫度控制。
Specifically, when the value of the non-linear term un1 is positive (one side of the switching phase plane; area I in Fig. 7), the switching
廠模型74係為溫度控制對象之電子元件D(台座10)的物理模型,為圖12所示者。然後,從切換控制器73所輸出之訊號會被輸入至廠模型74,而在廠模型74中經過必要的演算來得到控制訊號。
The
電子元件D之溫度控制係一邊藉由冷卻機構50之可變流量閥53,並以固定流量來使冷媒流通於冷媒流道32a而吸熱,一邊藉由溫度控制器30來加以進行。亦即,可藉由溫度控制器30,來進行將朝為加熱源之LED41投入的功率作為操作量之滑動模式控制,以及將朝為冷卻源之高速閥54投入之功率(高速閥之開閉訊號)作為操作量的冷卻模式控制所致的溫度控制。此時,便會藉由切換控制器73,而以非線性項un1之數值來決定是否直接使用非線性項un1來進行滑動模式控制,或是將非線性項un1作為高速閥54之開閉訊號來使用,以進行冷卻模式控制。在滑動模式控制之非線性項un1的數值為正之情況,便會藉由直接將朝LED41投入之功率作為操作量的滑動模式控制來進行溫度控制。在滑動模式控制之非線性項un1的數值為負之情況,非線性項un1便會作為高速閥54之開
閉訊號來輸出,而將LED41之滑動模式控制切換為冷卻模式控制。此時溫度控制便不會使用滑動模式控制器71之輸出。藉由使用冷卻模式控制,便可在關閉LED41之情況之外,還可冷卻電子元件D。藉此,便可確保在有非常大之發熱干擾的情況下之電子元件D的溫度控制性。
The temperature control of the electronic component D is performed by the
控制部15係由電腦所構成,且除了溫度控制器30之外,還具備具有控制檢查裝置1之各構成部的複數控制機能部的主控制部,而會藉由主控制部來控制檢查裝置之各構成部的動作。又,控制部係具有輸入裝置、輸出裝置、顯示裝置以及記憶裝置。主控制部所致之各構成部的控制會藉由被記憶於記憶裝置所內建之記憶媒體(硬碟、光碟、半導體記憶體等)的控制程式之處理配方來加以實行。
The
接著,便就使用檢查裝置1來對晶圓W進行檢查處理一範例來加以說明。首先,從裝載部3之FOUP藉由搬送裝置來取出晶圓W,而搬送至台座10並加以載置。接著,將台座10移動至既定位置。
Next, an example of using the
然後,開啟加熱機構40之全部LED41,而基於從蓋構件31之溫度感應器31a所取得的資訊,並以使蓋構件31之溫度在面內成為均勻的方式來調整來自LED41之光線輸出以及藉由可變流量閥53來調整流通於台座10內之冷媒流道32a的冷媒之流量。
Then, all the
在此狀態下,會藉由電位差測量單元16來取得檢查對象之電子元件D中的上述電位差生成電路的電位差。然後,以在面內為均勻的蓋構件31之溫度會與檢查對象之電子元件D的溫度成為略一致的方式來進行上述電位差之校正,而修正上述電位差之溫度特性的資訊。
In this state, the potential difference of the above-mentioned potential difference generating circuit in the electronic component D of the inspection object is obtained by the potential
之後,便讓台座10移動,而使設置於台座10上方之探針12a與晶圓W之檢查對象的電子元件D的電極E接觸。然後,對探針12a輸入檢查用之訊號。藉此,便開始電子元件D之檢查。
After that, the
上述檢查中,會基於檢查對象之電子元件D的電位差生成電路所產生的電位差之資訊來測量該電子元件D之溫度,並將該測量溫度作為目標溫度,再藉由溫度控制裝置20來進行該電子元件D之溫度控制。
In the above inspection, the temperature of the electronic component D to be inspected is measured based on the information of the potential difference generated by the potential difference generating circuit of the electronic component D, and the measured temperature is used as the target temperature, and then the
此時,會一邊藉由冷卻機構50之可變流量閥53,並以固定流量來使冷媒流通於冷媒流道32a而吸熱,一邊藉由溫度控制器30來進行溫度控制。亦即,可藉由溫度控制器30,來進行將朝為加熱源之LED41投入的功率作為操作量之滑動模式控制,以及將朝為冷卻源之高速閥54投入之功率(高速閥之開閉訊號)作為操作量的冷卻模式控制所致的溫度控制。此時,切換控制器73便會如上述般,藉由非線性項un1之數值來決定是否直接使用滑動模式控制器71之輸出(控制輸入),或是將非線性項un1作為高速閥54之開閉訊號來使用,以進行冷卻模式控制。具體而言,在滑動模式控制之非線性項un1的數值為正之情況,便會直接將滑動模式控制器71之輸出作為第1操作量來輸出至LED41。另一方面,非線性項un1的數值為負之情況,便會將非線性項un1作為高速閥54之開閉訊號來使用,而作為第2操作量來輸出至高速閥。
At this time, while the
在上述專利文獻1之檢查裝置中,於檢查電子元件的電氣特性時,為了再現該電子元件之實際裝設環境,便會藉由載置台內之冷媒流道或是加熱器來進行載置台之溫度控制。
In the inspection apparatus of
另一方面,近年來,由於電子元件會朝高速化及微細化發展,且集積度會變高,而使動作時之發熱增加非常多,故在晶圓中便有於電子元件之
檢查中,產生發熱干擾而讓電子元件產生不良狀況之虞。然而,上述專利文獻1中並未顯示出解除此般發熱干擾之方法。
On the other hand, in recent years, electronic components have been developing towards higher speed and miniaturization, and the degree of integration will become higher, which will increase the heat generation during operation. Therefore, they are used in electronic components on wafers.
During the inspection, there is a risk of generating heat interference and causing bad conditions in the electronic components. However, the above-mentioned
於是,本實施形態中,係在藉由冷卻機構50之可變流量閥53並以固定流量來讓冷媒流通於台座10之冷媒供給路32a而確保吸熱後,使用較能承受干擾之滑動模式控制,並將朝加熱機構40之LED41投入的功率(電流值)作為操作量來進行電子元件D之溫度控制。
Therefore, in this embodiment, after the
然而,僅在固定冷媒流量,而將朝LED41投入的功率作為操作量的滑動模式控制中,於發熱干擾變得非常大的情況下,即便關閉LED41仍會使吸熱不夠充分。因此,便會產生干擾控制的反應變慢的情況或是無法充分進行溫度控制的情況。又,雖會考量增加冷媒流量來提高吸熱性,但在此情況下,LED41之輸出便會不夠而無法達到目標溫度。又,雖有可增加冷媒流量並藉由使用最大輸出較大的LED,或是增加LED的密度來抑制電子元件之溫度上升的情況,但在該情況下,會使成本增加而非為現實。
However, in the sliding mode control in which only the refrigerant flow rate is fixed and the power input to the
於是,本實施形態中,便一邊藉由冷卻機構50之可變流量閥53,並以固定流量來使冷媒流通於冷媒流道32a而吸熱,一邊藉由非線性項un1之數值並以切換控制器7來切換實施將朝LED41投入的功率作為操作量之滑動模式控制,以及將朝高速閥54投入之功率(高速閥之開閉訊號)作為操作量的冷卻模式控制。亦即,在滑動模式控制之非線性項un1的數值為正之情況,由於發熱干擾之影響會較小,故會直接將滑動模式控制器71之輸出作為第1操作量而朝為加熱源之LED41投入。另一方面,在非線性項un1的數值為負之情況,便會將朝為冷卻源之高速閥54投入的功率(高速閥之開閉訊號)作為第2操作量來進行冷卻模式控制。亦即,在進行滑動模式控制時,於電子元件D之發熱干擾較大且滑動模式
控制之非線性項un1為負的情況,便會藉由切換控制器73來切換為冷卻模式控制。藉此,除了在關閉LED41的情況以外還可冷卻台座10,而使冷卻能力強化。從而,即便在有非常大的發熱干擾之情況下,仍可充分冷卻電子元件D之溫度,而可以良好的控制性來進行電子元件D之溫度控制。另外,從盡可能地減少無謂時間浪費的觀點看來,此時之高速閥54的位置最好是盡可能地靠近於台座10。
Therefore, in this embodiment, the
又,由於加熱機構40會以對應於複數之各電子元件D的方式來設置搭載有複數LED41之複數LED單元43,故可個別地加熱電子元件D。因此,便可僅加熱檢查中之電子元件D,而可抑制對其他電子元件D之發熱干擾。
In addition, since the
進一步地,由於會使用高速閥54來進行冷卻模式控制,故可追隨作為切換訊號所使用的非線性項un1之正負變動來開閉高速閥54,而可以高精度來進行冷卻控制。
Furthermore, since the high-
又,由於可使用水來作為冷媒,故無需使用氟氯烷系冷媒,且吸熱性會較使用氟氯烷系冷媒的情況要良好,而可將吸熱高速化。 In addition, since water can be used as a refrigerant, there is no need to use a chlorofluorocarbon-based refrigerant, and the endothermic property is better than the case of using a chlorofluorocarbon-based refrigerant, and the endothermic heat can be accelerated.
另外,電子元件之檢查可將複數元件總括來加以進行,亦可以DRAM等所採用之總括接觸探測般將所有的電子元件總括來加以進行。不論在任一情況下,檢查對象之電子元件的溫度都可如上述般,藉由併用將LED41之功率作為操作量的滑動模式控制以及利用高速閥之開閉的冷卻模式控制來以良好的控制性進行電子元件之溫度控制。 In addition, the inspection of electronic components can be carried out collectively with a plurality of components, and can also be carried out collectively with all electronic components like the collective contact detection used in DRAM and the like. In either case, the temperature of the electronic components of the inspection object can be as described above. The sliding mode control that uses the power of the LED41 as the operating quantity and the cooling mode control that uses the opening and closing of the high-speed valve are used together to achieve good controllability. Temperature control of electronic components.
<第2實施形態> <Second Embodiment>
接著,便就第2實施形態來加以說明。 Next, the second embodiment will be described.
雖第2實施形態之檢查裝置的基本構成會與第1實施形態之檢查裝置1相同,但如下述圖13所示,僅在搭載有控制方式有所不同之溫度控制器30’來取代
被包含在第1實施形態的溫度控制裝置20之溫度控制器30的點上,來與第1實施形態之檢查裝置1有所不同。
Although the basic structure of the inspection device of the second embodiment is the same as that of the
在本實施形態之溫度控制器30’中,係與第1實施形態之溫度控制器30同樣,會基於電子元件D之溫度測量結果,來進行會基於將朝為加熱源之LED41投入的功率(電流值輸出)作為操作量的滑動模式控制之控制。又,溫度控制器30’中,係與第1實施形態之溫度控制器30同樣,除了滑動模式控制之外,還進行會將朝高速閥投入之功率(亦即高速閥之開閉訊號)作為操作量的冷卻模式控制。其中,本實施形態之溫度控制器30’係在冷卻模式時亦會將控制訊號傳送至為加熱源之LED41的點上來與溫度控制器30有所不同。
In the temperature controller 30' of the present embodiment, similar to the
以下,便就溫度控制器30’來詳細說明。 Hereinafter, the temperature controller 30' will be described in detail.
圖13係顯示溫度控制器30’之控制塊的圖式。溫度控制器30’係具有滑動模式控制器71、冷卻模式控制器72、加算器77、切換控制器73’以及廠模型74。滑動模式控制器71、冷卻模式控制器72、廠模型74之基本構成係與第1實施形態之溫度控制器30相同。
Fig. 13 is a diagram showing the control block of the temperature controller 30'. The temperature controller 30' has a sliding
圖14係顯示冷卻模式控制器72、加算器77及切換控制器73’之構成及該等訊號之收授的塊狀圖。
Fig. 14 is a block diagram showing the composition of the
如上述,冷卻模式控制器72係將朝為冷卻源之高速閥54投入之功率(高速閥54之開閉訊號)作為操作量來進行冷卻控制。藉此,來控制被供給至台座10之冷媒流道32a的冷媒之量,以將電子元件D進行溫度控制。冷卻模式控制器72之輸出係基於冷媒流量及吸熱係數並藉由吸熱模型來加以計算。雖圖14中係將吸熱係數表示為-20,但此不過是一範例,其數值係可根據電子元件D等而變化。
As described above, the cooling
切換控制器73’係與第1實施形態之切換控制器73同樣,會使用滑動模式控制器之非線性項un1的數值來作為切換訊號。然後,切換控制器73’係藉由非線性項un1的數值來決定是否直接使用滑動模式控制器71之輸出,或是使用第2操作量。切換控制器73’會使用以加算器77而將滑動模式輸出與冷卻模式控制器72之輸出相加者來作為第2操作量。亦即,第2操作量係將來自滑動模式控制器71之朝為加熱源的LED41之輸出以及冷卻模式控制器之為冷卻源的高速閥之輸出相加者。
The switching controller 73' is the same as the switching
所謂直接使用滑動模式控制器71之輸出(控制輸入)係指將滑動模式控制器71之輸出作為第1操作量來輸出至為加熱源之LED41。
The so-called direct use of the output (control input) of the sliding
具體而言,切換控制器73’在非線性項un1的數值為正(切換相平面之一邊側;圖7之區域I)之情況,便會直接將滑動模式控制器71之輸出作為第1操作量來輸出至LED41。又,非線性項un1的數值為負(切換相平面之另邊側;圖7之區域II)之情況,便會將滑動模式控制器71之輸出與冷卻模式控制器72之為冷卻源的高速閥54之輸出(高速閥之開閉訊號)相加者作為第2操作量來使用。
Specifically, when the value of the non-linear term un1 is positive (one side of the switching phase plane; area I in Figure 7), the switching controller 73' will directly use the output of the sliding
冷卻模式控制器72如上述,係使開閉時間為0.1sec以下的高速來動作的高速閥54會追隨非線性項un1所致之高速切換而加以開閉。藉此,便可在關閉LED41之情況之外,還可冷卻電子元件D,而可確保在有非常大之發熱干擾的情況下之電子元件D的溫度控制性。又,作為第2操作量,不僅有此般冷卻模式控制器72之高速閥的輸出,還可藉由相加有滑動模式控制器71之輸出,來緩和急速冷卻的過度反應而得到良好的控制性。
As described above, the cooling
本實施形態中,係與第1實施形態同樣,開始電子元件D之檢查。然後,在該檢查中,會基於檢查對象之電子元件D的電位差生成電路所生成的電
位差的資訊,來測量該電子元件D之溫度,而將該測量溫度作為目標溫度,並藉由溫度控制裝置20來進行該電子元件D之溫度控制。
In this embodiment, similar to the first embodiment, the inspection of the electronic component D is started. Then, in this inspection, the electricity generated by the circuit is generated based on the potential difference of the electronic component D to be inspected.
The position difference information is used to measure the temperature of the electronic component D, and the measured temperature is used as the target temperature, and the
此時,會一邊藉由冷卻機構50之可變流量閥53,並以固定流量來使冷媒流通於冷媒流道32a而吸熱,一邊藉由溫度控制器30’來進行溫度控制。亦即,溫度控制器30’中,切換控制器73’便會藉由非線性項un1之數值來決定是否直接使用滑動模式控制器71之輸出,或是使用會將滑動模式輸出與冷卻模式控制器72之輸出相加的第2操作量。具體而言,在滑動模式控制之非線性項un1的數值為正之情況,便會直接將滑動模式控制器71之輸出作為第1操作量來輸出至LED41。另一方面,非線性項un1的數值為負之情況,便會將滑動模式控制器71之輸出與冷卻模式控制器72之為冷卻源的高速閥之輸出相加者作為第2操作量來加以輸出。
At this time, the
上述第1實施形態中,冷卻模式控制器72會使開閉時間為0.1sec以下的高速來動作的高速閥54會追隨非線性項un1所致之高速切換而加以開閉。藉此,便可在關閉LED41之情況之外,還可冷卻電子元件D,而可確保在有非常大之發熱干擾的情況下之電子元件D的溫度控制性。
In the first embodiment described above, the cooling
然而,第1實施形態中,雖控制性為良好,但在非線性項un1為負的情況,由於僅為高速閥54之動作,故會有急速冷卻的過度反應之情事。亦即,為了彌補藉由切換控制器73’來開啟高速閥54時之電子元件D的溫度下降,便需要加大LED41之輸出,又,亦會使進行接下來之冷卻的時間點(高速閥為開啟的時間點)提早。因此,在利用切換控制器73’來控制時,便會有電流值之振幅變大及高速閥54開啟的頻度變高的傾向。
However, in the first embodiment, although the controllability is good, when the non-linear term un1 is negative, since only the high-
相對於此,本實施形態中,作為非線性項un1為負之情況的第2操作量不僅是此般冷卻模式控制器72之高速閥的輸出,還加上滑動模式控制器71之輸出。如此般,由於在高速閥54之動作中亦會同時將控制訊號傳送至LED41,故可緩和急速冷卻之過度反應。因此,除了上述第1實施形態之基本效果之外,還可以降低電流值之振幅,且減少高速閥54之開啟頻度,而可達成振幅更小且更順暢的溫度控制之效果。
On the other hand, in the present embodiment, the second operation amount in the case where the non-linear term un1 is negative is not only the output of the high-speed valve of the
另外,第2實施形態中,由於基本的檢查裝置之構成係與第1實施形態相同,故其他以第1實施形態所得到之效果亦可同樣地在第2實施形態獲得。 In addition, in the second embodiment, since the basic inspection device has the same configuration as the first embodiment, other effects obtained by the first embodiment can also be obtained in the second embodiment in the same manner.
<模擬結果> <Simulation results>
接著,便就模擬結果來加以說明。 Next, the simulation results will be explained.
在此,便就對形成在晶圓的30mm×40mm大小之電子元件(晶片),受到150W、300W、450W的發熱干擾所影響的情況下之溫度控制性來進行模擬。 Here, we will simulate the temperature controllability of electronic components (chips) with a size of 30mm×40mm formed on a wafer under the influence of thermal interference of 150W, 300W, and 450W.
圖15~17係顯示就供給固定流量之冷媒,並將朝LED投入之功率作為操作量,且藉由滑動模式控制來進行晶片之溫度控制的情況來進行模擬之結果的圖式。 Figures 15 to 17 are graphs showing the results of the simulation when a constant flow of refrigerant is supplied, the power input to the LED is used as the operating quantity, and the temperature of the chip is controlled by sliding mode control.
如圖15所示,在滑動模式控制的情況,雖在發熱干擾為150W下可維持良好的控制性,但如圖16、17所示,確認到在發熱干擾為300W、450W的情況,會觀察到溫度上升,而無法進行溫度控制之情事。 As shown in Figure 15, in the case of sliding mode control, although good controllability can be maintained at 150W heat interference, as shown in Figures 16 and 17, it is confirmed that when the heat interference is 300W, 450W, it will be observed When the temperature rises, the temperature cannot be controlled.
圖18~20係顯示就併用將朝LED投入之功率作為操作量的滑動模式控制與在非線性項un1為負時所進行之高速閥的開閉所致之冷卻模式控制的第1實施形態來進行模擬之結果的圖式。 Figures 18 to 20 show the first embodiment that uses both sliding mode control using the power input to the LED as the operating quantity and cooling mode control by opening and closing the high-speed valve when the non-linear term un1 is negative. Schema of the simulation result.
如該等圖所示,確認到藉由併用滑動模式控制與高速閥之開閉所致的冷卻模式控制之第1實施形態,受到150W~450W的發熱干擾所影響的情況下之任一者都可進行良好的溫度控制。 As shown in these figures, it was confirmed that the first embodiment of the cooling mode control by using the sliding mode control and the opening and closing of the high-speed valve together can be affected by the heat interference of 150W~450W. Perform good temperature control.
圖21~23係顯示就併用滑動模式控制以及在非線性項un1為負時所進行之將滑動模式控制器輸出與冷卻模式控制器輸出相加的控制之第2實施形態來進行模擬的結果之圖式。 Figures 21 to 23 show the results of the simulation of the second embodiment of the control that adds the output of the sliding mode controller and the output of the cooling mode controller when the non-linear term un1 is negative. figure.
如該等圖所示,確認到併用滑動模式控制以及將滑動模式控制器輸出與冷卻模式控制器輸出相加的控制之第2實施形態,便可在150W~450W的任一者之發熱干擾的情況下都能進行良好的溫度控制。又,得知相較於第1實施形態,第2實施形態在產生發熱干擾的情況下所供給之電流的振幅會較小。 As shown in the figure, it was confirmed that the second embodiment of the control that uses the sliding mode control together and the control that adds the output of the sliding mode controller and the output of the cooling mode controller can interfere with heat generation at any one of 150W to 450W. Under the circumstances, good temperature control can be carried out. In addition, it is found that the amplitude of the current supplied in the second embodiment is smaller in the case of heat disturbance than in the first embodiment.
圖24及圖25係分別將發熱干擾為150W時之第1實施形態及第2實施形態的模擬結果放大而顯示的圖式。由該等圖式看來,得知相較於第1實施形態,第2實施形態的電流輸出之振幅會較小,且控制振幅會較小。又,得知發熱干擾會急遽改變的時間點中之控制對象溫度的過衝或下衝亦在第2實施形態會較小。 FIGS. 24 and 25 are diagrams respectively showing the results of the simulation of the first embodiment and the second embodiment when the heat disturbance is 150W, and are displayed in an enlarged manner. From these diagrams, it can be seen that compared with the first embodiment, the amplitude of the current output in the second embodiment is smaller, and the control amplitude is smaller. In addition, the overshoot or undershoot of the control target temperature at the point in time when it is known that the heating disturbance will change rapidly is also smaller in the second embodiment.
圖26及圖27係分別將發熱干擾為300W時之第1實施形態及第2實施形態的模擬結果放大而顯示的圖式。又,圖28及圖29係分別將發熱干擾為450W時之第1實施形態及第2實施形態的模擬結果放大而顯示的圖式。如從該等圖便能了解般,得知即便干擾大至300W、450W,仍會與干擾為150W時同樣,相較於第1實施形態,第2實施形態的電流輸出之振幅會較小,且控制振幅會較小。又,得知發熱干擾會急遽改變的時間點中之控制對象溫度的過衝或下衝亦在第2實施形態會較小。 FIGS. 26 and 27 are diagrams respectively showing the results of the simulation of the first embodiment and the second embodiment when the heat interference is 300W, and are displayed in an enlarged manner. In addition, FIGS. 28 and 29 are respectively enlarged and displayed diagrams of the simulation results of the first embodiment and the second embodiment when the heat interference is 450W. As can be understood from these figures, even if the interference is as large as 300W or 450W, it will still be the same as when the interference is 150W. Compared with the first embodiment, the amplitude of the current output in the second embodiment will be smaller. And the control amplitude will be smaller. In addition, the overshoot or undershoot of the control target temperature at the point in time when it is known that the heating disturbance will change rapidly is also smaller in the second embodiment.
<其他適用> <Other applicable>
以上,雖已就實施形態來加以說明,但本次所揭露的實施形態在所有的點上應都只是例示而非為限制。上述實施形態係可不超出添附申請專利範圍及其主旨來以各種形態進行省略、置換、變更。 Although the embodiment has been described above, the embodiment disclosed this time should be an illustration in all points and not a limitation. The above-mentioned embodiments can be omitted, replaced, and changed in various forms without going beyond the scope of the attached patent application and the spirit thereof.
例如,上述實施形態中,雖已就使用LED來作為加熱源之情況來加以說明,但加熱源並不限於LED,亦可為阻抗加熱器等的其他加熱源。又,雖上述實施形態中,作為溫度控制對象係以晶圓上之電子元件(晶片)為例來加以表示,但溫度控制對象亦可為台座,而不限於電子元件(晶片)。又,亦不限於將溫度控制裝置適用在檢查裝置之情況。 For example, in the above-mentioned embodiment, although the case where an LED is used as a heating source has been described, the heating source is not limited to an LED, and other heating sources such as impedance heaters may be used. In addition, although in the above-mentioned embodiment, the electronic component (chip) on the wafer is shown as an example of the temperature control target, the temperature control target may also be a pedestal and is not limited to the electronic component (chip). Moreover, it is not limited to the case where the temperature control device is applied to the inspection device.
30:溫度控制器 30: temperature controller
71:滑動模式控制器 71: Sliding Mode Controller
72:冷卻模式控制器 72: Cooling mode controller
73:切換控制器 73: Switch controller
74:廠模型 74: Factory model
x:溫度檢出訊號 x: temperature detection signal
u:控制輸入 u: control input
σ:切換函數 σ: switching function
Claims (19)
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JP2018-224108 | 2018-11-29 | ||
JP2019057315A JP7304722B2 (en) | 2018-11-29 | 2019-03-25 | Temperature control device, temperature control method, and inspection device |
JP2019-057315 | 2019-03-25 |
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TW202036198A true TW202036198A (en) | 2020-10-01 |
TWI840451B TWI840451B (en) | 2024-05-01 |
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