TW202032875A - Semiconductor laser light source device used to increase light output while suppressing expansion of the device scale - Google Patents

Abstract

This invention provides a semiconductor laser light source device in which a plurality of semiconductor laser elements are used to increase light output while suppressing the expansion of the device scale. A semiconductor laser light source device is equipped with: a plurality of semiconductor laser elements formed on an upper layer of a surface of a heat dissipation sheet and having a light emitting region, and a refracting optical system for a bundle of light rays emitted from the light emitting region incident changing a traveling direction and emitting. At least two semiconductor laser elements are configured as inclined to each other when viewed from a first direction orthogonal to the surface of the heat dissipation sheet, so that the main rays of the bundle of light rays emitted from the respective light emitting region of each semiconductor laser element are non-parallel to each other. The refracting optical system is composed of an optical system that a first focal point and a second focal point can displace in the optical axis direction. The first focal point is the focal point on a first plane of the first direction and the optical axis direction of the refracting optical system. The second focal point is the focal point on a second plane of the optical axis direction and a second direction orthogonal to the first direction.

Description

Semiconductor laser light source device

The present invention relates to a semiconductor laser light source device, and particularly relates to a semiconductor laser device having a plurality of semiconductor laser elements.

As a light source for projectors, semiconductor laser elements have been developed. In recent years, semiconductor laser elements have been used as light sources as described above, and the market has further expected a light source device capable of improving light output.

In order to increase the light output on the light source side, a method of concentrating the light emitted from a plurality of semiconductor laser elements is considered. However, semiconductor laser elements have a certain width, and there is a limit to placing them in close contact. In other words, if only a plurality of semiconductor laser elements are arranged, the light source device will increase in size.

From this point of view, for example, as in the following Patent Document 1, there is a group of semiconductor laser elements arranged in a first area, and another group of semiconductor laser elements are arranged in a second area different from the first area. The light emitted by the two semiconductor laser element groups is synthesized using a light synthesis method formed by a long and narrow mirror. With this method, compared with the case where a plurality of semiconductor laser elements are arranged side by side only at the same part, the arrangement area can be reduced and the light intensity can be increased. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2017-215570 A

[The problem to be solved by the invention]

However, as a method of increasing the light intensity on the light source side, a method of using a plurality of light source modules provided with semiconductor laser elements is known. According to this structure, in accordance with the number of semiconductor laser elements installed, a plurality of regions (light emitting regions: sometimes referred to as "emitters") emitting laser light are provided. The inventors of the present invention used this light source module to review and improve the light intensity, but found that there are the following problems.

Fig. 1A is a perspective view schematically showing the structure of a semiconductor laser element provided with one emitter. This kind of semiconductor laser element is sometimes called "single emitter type". In addition, in FIG. 1A, the beam of light (laser light) emitted from the emitter is also schematically shown. In addition, in this specification, the beam-shaped group of light rays emitted from a single emitter is called "ray beam", and the light rays emitted from the center of the emitter are called "primary rays".

As shown in FIG. 1A, in the case of a so-called "end-emitting type" semiconductor laser element 100, it is known that the light beam 101L emitted from the emitter 101 is displayed in an elliptical cone shape. In this specification, among the two directions (X direction and Y direction) orthogonal to the optical axis (Z direction shown in FIG. 1A), the direction where the divergence angle of the light beam 101L is larger (Y direction shown in FIG. 1A) ) Is called the "fast axis direction", and the direction in which the divergence angle of the light beam 101L is small (the X direction shown in FIG. 1A) is called the "slow axis direction". Also, the "fast axis" is sometimes called the "Fast axis", and similarly, the "slow axis" is sometimes called the "Slow axis".

FIG. 1B is a schematic diagram showing the case when the light beam 101L is viewed from the X direction and the case when viewed from the Y direction. As shown in FIG. 1B, the divergence angle θy of the light beam 101L in the fast axis direction is larger, and the divergence angle θx of the light beam 101L in the slow axis direction is smaller.

In addition, in FIG. 1B, only the light rays emitted from the upper and lower ends of the emitter 101 are drawn. This drawing method is also applicable to the following drawings. In addition, in the following figures, for convenience of description, the divergence angle of the light beam (light beam 101L, etc.) may be shown to be exaggerated than the actual one.

When a plurality of semiconductor laser elements 100 are arranged and the light (beam 101L) emitted from each semiconductor laser element 100 is condensed and used, from the viewpoint of reducing the size of the optical member, generally the light beam 101L After the parallel light is converted, the light is collected by a lens. Specifically, a collimator lens (also referred to as a "collimating lens") is arranged at the rear of the semiconductor laser element 100 to reduce the divergence angle of each light beam 101L.

2A is a diagram schematically showing the beam of light traveling in the YZ plane direction when the collimator lens 102 is arranged at the rear stage of the semiconductor laser element 100.

According to FIG. 2A, the light beam 101L becomes a substantially parallel light beam (hereinafter referred to as "substantially parallel light beam") in the fast axis direction (Y direction) after passing through the collimator lens 102. In addition, in this specification, "substantially parallel light beam" or "substantially parallel light beam" refers to a light beam with a divergence angle of less than 4˚. In addition, in each of the following figures of FIG. 2A, there are cases where a substantially parallel light beam is illustrated as a completely parallel light beam.

2B is a diagram schematically showing the beam of light traveling in the XZ plane direction when the collimator lens 102 is arranged at the rear stage of the semiconductor laser element 100. According to FIG. 2B, after passing through the collimator lens 102, the light beam 101L also becomes a substantially parallel light beam in the slow axis direction (X direction).

FIG. 3A schematically illustrates the structure of a plurality of light source modules including the semiconductor laser element 100 shown in FIG. 1A. As shown in FIG. 3A, the light source module 120 has an auxiliary base 121, and a plurality of semiconductor laser elements (100, 110) are provided on the upper layer of the auxiliary base 121. When viewed in the Z direction (optical axis direction), for example, as shown in FIG. 3B, the emitters (101, 111) are arranged adjacent to each other. In addition, in FIG. 3A, for convenience of illustration, the X-direction distance of each emitter (101, 111) is exaggeratedly displayed.

Fig. 4 is the same as Fig. 1B, respectively showing the light beams (101L, 111L) emitted from each emitter (101, 111) mounted on the light source module 120 shown in Fig. 3A as viewed from the X direction The situation is the same as that viewed from the Y direction. In addition, in Fig. 4, for the convenience of the drawing, only the emitters (101, 111) are shown in the figure viewed from the X direction.

As shown in FIG. 3A and FIG. 3B, the semiconductor laser elements (100, 110) are arranged so that the faces of the emitters (101, 111) are arranged side by side in the X direction. That is, the emitters (101, 111) are formed at the same coordinate position in the Y direction, and when viewed from the X direction, the light beams (101L, 111L) completely overlap. On the other hand, the emitters (101, 111) are formed at different coordinate positions in the X direction, and when viewed from the Y direction, the respective positions of the light beams (101L, 111L) are displayed staggered.

In the latter part of the light source module 120 illustrated in FIG. 3A, similarly to FIGS. 2A and 2B, the state of the light beam when the collimator lens 102 is arranged is reviewed. Referring to FIG. 4, as described above, the light beams (101L, 111L) completely overlap when viewed from the X direction. Therefore, in the fast axis direction (Y direction), after each light beam (101L, 111L) passes through the collimator lens 102, it becomes a substantially parallel light beam like FIG. 2A.

FIG. 5 is a diagram schematically showing the light beam traveling in the XZ plane direction when the collimator lens 102 is arranged at the rear of the light source module 120. In addition, in order to facilitate the drawing, the size of each semiconductor laser element (100, 110) included in the light source module 120 is partially reduced for illustration.

As described above, the light source module 120 includes a plurality of semiconductor laser elements (100, 110), and each emitter (101, 111) is arranged separately in the X direction. Therefore, the X coordinate of the center position of the collimator lens 102 and the X coordinate of the center position of each emitter (101, 111) will be unavoidably misaligned.

As a result, although the light beam 101L emitted from the emitter 101 and the light beam 111L emitted from the emitter 111 each become a substantially parallel light beam after passing through the collimator lens 102, the chief ray 101Lm of the light beam 101L and the light beam The chief ray 111Lm of 111L becomes non-parallel. That is, the light beam 101L and the light beam 111L have different travel directions in the X direction (the travel direction on the XZ plane).

In the case of this structure, for example, even if a condensing optical system is used to condense the light beams (101L, 111L) later, the condensed light beam group will be diffused, and light rays that cannot be guided to the target direction are generated. As a result, the light utilization efficiency will be reduced.

After passing through the collimator lens 102, the direction of travel of the light beam 101L and the light beam 111L on the XZ plane to the optical axis (Z axis) is aligned by the relative value of the distance between the emitters (101, 111) The focal length of the straight lens 102 is determined. In more detail, the distance between the optical axis of the collimator lens 102 and the positions of the emitters (101, 111) farthest from the optical axis of the collimator lens 102 is defined as d, and the focal point of the collimator lens 102 When the distance is set to f, the angle θ between the traveling direction of the principal rays (101Lm, 111Lm) of the light beam (101L, 111L) and the optical axis of the collimator 102 is set as θ= tan ^-1 ( d/f). At this time, the angle θ _xm between the chief ray 101Lm and the chief ray 111Lm becomes twice the aforementioned θ.

As shown in FIG. 5, the chief ray 101L and the chief ray 111L, after passing through the collimator lens 102, travel close to each other in the X direction, and then the two travel in separate directions. As a result, in the aspect of FIG. 5, the light beam 101L is completely separated from the light beam 111L at the position of z1 in the optical axis direction (Z direction).

Conversely, for the focal distance of the collimator lens 102, if the distance between the emitters (101, 111) is large enough to be ignored, the difference between the chief ray 101Lm of the ray beam 110L and the ray beam 111L in the X direction The angle between the chief ray 111Lm is substantially close to 0˚, and the separation of the light beams (101L, 111L) does not occur. However, for this, it is necessary for the collimator lens 102 to be a lens with a sufficiently long focal length, which will result in an increase in the size of the optical system.

In particular, when a plurality of light source modules 120 are arranged to form a light source device, it is necessary to arrange the collimator lens 102 corresponding to the emitters (101, 111) of each light source module 120, so the scale of the device becomes extremely large.

In view of the above-mentioned problems, the present invention aims to provide a semiconductor laser light source device, which uses a plurality of semiconductor laser elements to suppress the expansion of the device scale and increase the light output. [Technical means to solve the problem]

The semiconductor laser light source device of the present invention includes: heat sink, A plurality of semiconductor laser elements formed on the surface of the aforementioned heat sink and having a light emitting area, and A refractive optical system that enters the light beams emitted from the light-exiting regions of the plurality of semiconductor laser elements and changes the direction of travel to be emitted, At least two of the semiconductor laser elements are arranged obliquely to each other when viewed in a first direction orthogonal to the surface of the heat sink, so that each of the semiconductor laser elements emits the light from the respective light emitting regions The principal rays of the light beam become non-parallel to each other, The refractive optical system is composed of an optical system that displaces a first focus and a second focus in the optical axis direction, and the first focus is formed by the first direction and the optical axis direction of the refractive optical system The focal point on the first plane, and the second focal point is the focal point on the second plane formed by the optical axis direction and the second direction orthogonal to the first direction.

5, as described above, in a semiconductor laser light source device including a plurality of semiconductor laser elements, the light emission regions (emitters) are separated and arranged in the slow axis direction. As a result, the light beam diffuses in the slow axis direction.

In this regard, according to the above structure, at least two semiconductor laser elements are arranged obliquely to each other on the surface of the heat sink. In more detail, the at least two semiconductor laser elements are arranged so that the chief rays of the light beams emitted from the light exit regions of the semiconductor laser elements become non-parallel to each other.

First, for the sake of simplicity, the principal rays of the light beams emitted from the light-exit regions of the two semiconductor laser elements mentioned above approach each other as they travel on the second plane, so that the two semiconductor laser elements The inclined configuration will be described. This aspect is called the "first aspect". In the case of the first aspect, the separation distance of the light beams emitted from each light exit area will decrease as they travel on the second plane.

Here, the refractive optical system included in the semiconductor laser light source device of the present invention displaces the focus on the first plane (first focus) and the focus on the second plane (second focus) in the optical axis direction The optical system is composed. For example, the position where the light exit area exists in the optical axis direction can be set as the first focus, and the vicinity of the position where the principal rays of the light beams emitted from the light exit areas intersect each other, which is further ahead of the optical axis direction, can be set as The second focus. At this time, the light beams emitted from the aforementioned two light exit areas and travel on the second plane have a shorter separation distance at the position of the second focal point of the refractive optical system than the separation distance of the light exit area . The divergence angle of the light beam after passing through the refractive optical system depends on the beam width of the light beam at the focal point. Therefore, with this structure, the effect of suppressing the divergence angle of the light beam traveling on the second plane can be obtained. As a result, it is possible to suppress the spread of light beams than before, maintain light utilization efficiency, and reduce the size of the condensing optical system disposed in the subsequent stage.

The semiconductor laser component is on the surface of the heat sink, and it can be configured through the auxiliary seat. In this case, one semiconductor laser element or multiple semiconductor laser elements may be placed on one auxiliary base.

In more detail, When the distance between the chief rays of light emitted from the light emitting area of the adjacent semiconductor laser element in the second direction is defined as d1, The plurality of semiconductor laser elements may be arranged obliquely to each other such that in the direction of the optical axis, from the light emitting area to a specific position on the side of the light emitting area than the refractive optical system, it follows the light Traveling in the axial direction reduces the aforementioned interval d1.

At this time, the second focal point may be located closer to the refractive optical system than the first focal point in the optical axis direction.

In addition, contrary to the structure described above, the two semiconductor laser elements are arranged obliquely so that the principal rays of the light beams emitted from the light emission regions of the two semiconductor laser elements follow each other in the second The planes can go up and separate from each other. This aspect is called the "second aspect." In this case, the beams of light emitted from the respective light exit regions have a greater separation distance as they travel on the second plane.

However, in this structure as well, assuming that the chief rays of the light beams emitted from the respective light exit regions extend opposite to the direction of travel, the vicinity of the position where the virtual chief rays intersect each other is set as the second focus , Setting the position where the light exiting area in the optical axis direction exists as the first focus, by which the same effect as the above can be obtained. That is, even in the case of this configuration, the beam of light emitted from the aforementioned two light exit areas and travels on the second plane is at the position of the second focal point of the refraction optical system compared to the separation distance of the light exit area The separation distance (here, corresponding to the separation distance of the virtual light beam) will be shorter. As mentioned above, the divergence angle of the light beam after passing through the refractive optical system depends on the beam width of the light beam at the focal point. Therefore, even in the case of the second aspect, it can be suppressed in the same way as the first aspect. The effect of the divergence angle of the light beam traveling on the second plane.

In more detail, the principal rays emitted from the light exit region of the adjacent semiconductor laser element are virtually extended in the direction opposite to the refractive optical system. When the interval in the second direction is d1, The plurality of semiconductor laser elements are arranged obliquely to each other such that in the direction of the optical axis, from the virtual light emitting area corresponding to the end face at the position opposite to the light emitting area to a specific position, it follows Traveling in the opposite direction of the optical axis direction reduces the aforementioned interval d1.

At this time, the second focal point may be located further away from the refractive optical system in the optical axis direction than the first focal point.

The refractive optical system may have any specific structure as long as it is an optical system that displaces the first focal point and the second focal point in the optical axis direction.

As an example, The refractive optical system may be composed of a single lens in which the focal length in the first direction is different from the focal length in the second direction. As such a lens, an anamorphic lens or the like can be used.

As another example, The aforementioned refractive optical system may also have: For the light beam emitted from the light exit area, the first lens having the first focal point that reduces the divergence angle in the first direction is used as the focal point; and The second lens is arranged at a rear stage of the first lens, and for the beam of light emitted from the light exit area, the second focal point whose divergence angle in the second direction is reduced is a second lens.

The aforementioned first lens can be a FAC (Fast Axis Collimation) lens, and the aforementioned second lens can be a SAC (Slow Axis Collimation) lens.

As another example, The aforementioned refractive optical system may also have: For the beam of light emitted from the light exit area, a first lens focusing on the first focal point at which the divergence angles in the first direction and the second direction are reduced; and The second lens is arranged at a rear stage of the first lens, and for the beam of light emitted from the light exit area, the second focal point whose divergence angle in the second direction is reduced is a second lens.

In this case, the first lens may be a collimator lens that collimates both directions of the fast axis and the slow axis, and the second lens may be a cylindrical lens that refracts only the slow axis direction.

The foregoing plural semiconductor laser elements may also be connected in series. In particular, the semiconductor laser device includes the semiconductor laser element of the present invention (hereinafter, referred to as the "first semiconductor laser element") and a semiconductor laser that has a higher driving voltage and emits light in other wavelength bands. In the case of a radio element (hereinafter, referred to as a "second semiconductor laser element"), it is useful that the driving power of the first semiconductor laser element and the second semiconductor laser element can be shared. [Effects of Invention]

According to the present invention, a plurality of semiconductor laser elements are used to realize a semiconductor laser light source device that suppresses the expansion of the device scale and improves the light output.

Each embodiment of the semiconductor laser light source device of the present invention will be described with reference to the drawings as appropriate. In addition, each of the following drawings is a schematic illustration, and the actual size ratio and the size ratio on the drawing do not necessarily match. Moreover, the size ratios are not necessarily the same among the various drawings.

[First Embodiment] The first embodiment of the semiconductor laser light source device of the present invention will be described.

Fig. 6 is a diagram schematically showing the structure of the first embodiment of the semiconductor laser light source device. 7 is a diagram schematically showing the structure of the semiconductor laser element included in the semiconductor laser light source device.

The semiconductor laser light source device 1 includes semiconductor laser elements (10, 20) and a refractive optical system 30. The semiconductor laser elements (10, 20), as shown in FIG. 7, are formed on the same heat sink 5 and housed in the housing member 6. In addition, power is supplied from the external lead 4, thereby emitting light beams (12, 22) from the light emitting regions (11, 21) of the semiconductor laser elements (10, 20). This light beam (12, 22) passes through the window member 7 provided in the housing member 6, and reaches the outside, for example. Furthermore, in this embodiment, the semiconductor laser element 10 and the semiconductor laser element 20 are connected in series with each other.

In addition, in the following, description will be made with reference to the XYZ coordinate system illustrated in FIG. 6 or FIG. 7 as appropriate. That is, the direction of the optical axis 30A of the refractive optical system 30 is defined as the "Z direction". In addition, the fast axis direction of the light beam (12, 22) emitted from each light emission area (11, 21) is defined as the "Y direction", and the slow axis direction is defined as the "X direction". At this time, the Y direction corresponds to the "first direction", and the X direction corresponds to the "second direction". In addition, the YZ plane defined by the Y direction and the Z direction corresponds to the "first plane", and the XZ plane defined by the X direction and the Z direction corresponds to the "second plane". In Fig. 6 and Fig. 7, the structure on the YZ plane and the structure on the XZ plane are divided into upper and lower sections. In addition, the upper part of FIG. 7 illustrates the state when the housing member 6 is viewed from the X direction. Therefore, the two outer lead wires 4 illustrated in the lower part of FIG. 7 are displayed superimposed in the X direction.

In addition, in the following, when it is described only as "X direction", "Y direction", or "Z direction", the sign of the direction is not distinguished. On the other hand, in the case of distinguishing the sign of the direction and describing it, it is marked as "+X direction", "-X direction", etc.

As shown in FIG. 7, semiconductor laser elements (10, 20) are formed on the surface of the heat sink 5. Here, the surface of the radiating fin 5 is shown as being parallel to the XZ plane. Moreover, the semiconductor laser element 10 and the semiconductor laser element 20 are arranged separately in the X direction.

In addition, although not shown in FIG. 7, the semiconductor laser elements (10, 20) may be mounted on the surface of the heat sink 5 through an auxiliary seat. The heat sink 5 is provided for the purpose of dissipating heat generated when the semiconductor laser element (10, 20) emits light, and is made of a material with high thermal conductivity such as copper or copper alloy. The auxiliary seat, for example, is provided with electrode wiring not shown on the surface, thereby forming an electrical connection for supplying power to the semiconductor laser element (10, 20), and has a connection between the semiconductor laser element (10, 20) The heat generated during light emission is guided to the heat sink 5 side. The auxiliary seat is to choose an appropriate material in view of heat dissipation, insulation, and the difference in linear expansion coefficient with semiconductor laser components (10, 20). As an example, the auxiliary seat is made of materials such as AlN, Al ₂ O ₃ , SiC, and CuW.

In addition, as shown in the lower part of FIG. 7, the semiconductor laser elements (10, 20) are arranged obliquely to each other when viewed from the Y direction. Regarding this point, return to FIG. 6 to continue the description.

In Fig. 6, the upper part of the figure shows the light beam (12, 22) emitted from the light emitting area (11, 21) of the semiconductor laser element (10, 20) traveling along the YZ plane. Schematic representation. In addition, the lower part of FIG. 6 is a diagram schematically showing how the light beam (12, 22) travels along the XZ plane. That is, in FIG. 6, the upper part of the figure is to make the direction on the figure surface correspond to the fast axis direction of the light exit area (11, 21), and the lower figure is to make the direction of the figure face correspond to the light exit area (11, 21). 21) The slow axis direction.

In addition, in FIG. 6, the principal rays (12m, 22m) of the ray bundles (12, 22) are shown as single-point chain lines for convenience. It is also common in the following diagrams.

As described above, the semiconductor laser element (10, 20) emits an elliptical cone-shaped light beam (12, 22) from the light emitting area (11, 21). With reference to Figure 4 and the same as above, the light exit regions (11, 21) are formed at the same coordinate position in the Y direction, so when viewed from the X direction, the light beams (12, 22) are completely overlapped (see Figure 6 Upper paragraph). Also, as described above, the semiconductor laser elements (10, 20) are arranged separately in the X direction, so the light emitting regions (11, 21) are formed at different coordinate positions in the X direction. Therefore, when viewed from the Y direction, the respective positions of the light beams (12, 22) are shifted (refer to the lower part of FIG. 6).

Here, the refractive optical system 30 included in the semiconductor laser light source device 1 of the present embodiment is composed of a lens 31 whose focal length on the YZ plane is different from the focal length on the XZ plane. As such a lens 31, for example, an anamorphic lens or the like can be used.

In more detail, the focal length of the lens 31 in the Z direction between the focal point 30yf on the YZ plane and the center position of the lens 31, the focal point in the Z direction between the focal point 30xf on the XZ plane and the center position of the lens 31 The distance is different. The focus 30yf corresponds to the “first focus”, and the focus 30xf corresponds to the “second focus”. At this time, the focal point 30yf and the focal point 30xf are displaced in the Z direction. In the structure of this embodiment, the focal point 30xf is located on the side of the lens 31 in the Z direction by a distance dz from the focal point 30yf.

The lens 31 has the same function as the collimator lens 102 described above with reference to FIG. 2A for the light beam (12, 22) traveling on the YZ plane. 4 and for the same reason as described above, the light beam (12, 22) emitted from the semiconductor laser element (10, 20) travels with a large divergence angle θy in the fast axis direction. That is, assuming that the lens 31 does not exist, the light beam (12, 22) will spread in the Y direction while traveling on the YZ plane. The lens 31 is provided for the purpose of suppressing the spread of the light beam (12, 22) in the Y direction. Preferably, the lens 31 transforms the light beam (12, 22) traveling in the Z direction on the YZ plane into a substantially parallel light beam (13, 23). Therefore, the focal point 30yf of the lens 31 on the YZ plane is arranged near the position of the light emitting area (11, 21) of the semiconductor laser element (10, 20).

In addition, the "near the position of the light exit area (11, 21)" here means that except for the Z coordinate and the Z coordinate of the light exit area (11, 21) (hereinafter, simply referred to as "coordinate Z0") exactly the same In addition to the case, when the Z-direction separation distance between the coordinate Z0 and the Z coordinate of the lens 31 is defined as zc, the area where the coordinate Z0 is displaced back and forth in the Z direction by a length within 10% of the aforementioned separation distance zc.

On the other hand, as described above, the semiconductor laser elements (10, 20) are arranged in a mutually inclined state on the XZ plane. In the case of this embodiment, the semiconductor laser elements (10, 20) are arranged obliquely so that the chief ray 12m of the light beam 12 emitted from the light emitting region 11 provided in the semiconductor laser element 10 is emitted from the semiconductor laser The chief ray 22m of the light beam 22 emitted from the light exit area 21 of the element 20 gradually approaches in the X direction as it travels in the Z direction.

In more detail, as shown in an enlarged view in FIG. 8, the semiconductor laser element 10 has the end face of the light emitting region 11 arranged in parallel to the X direction and turned clockwise on the XZ plane by an angle θ ₁₁ status to configure. On the other hand, in the semiconductor laser element 20, the end face of the light emitting region 21 is arranged in a state where it is arranged parallel to the X direction to a state rotated counterclockwise by an angle θ ₁₂ on the XZ plane. Also, for the convenience of illustration, FIG. 8 is different from FIG. 6 in that only the chief rays (12m, 22m) are representatively shown for the light beams (12, 22).

The end surfaces of the light exit area 11 and the light exit area 21 are separated by a distance d0 in the X direction, so the chief rays (12m, 22m) also travel in the XZ plane near the end surfaces with a distance d0. However, as described above, the semiconductor laser elements (10, 20) are arranged obliquely to each other. Therefore, the chief ray 12m and the chief ray 22m travel in the X direction with an interval d1 close to the XZ plane. This means that the light beam 12 emitted from the light exit area 11 and the light beam 22 emitted from the light exit area 21 travel in the XZ plane while approaching each other in the X direction (refer to the lower part of FIG. 6).

At this time, as shown schematically in FIG. 8, at a specific position 40, the chief ray 12m and the chief ray 22m will intersect on the XZ plane. The specific position 40 corresponds to the position where the light beam 12 and the light beam 22 are closest in the X direction. Therefore, the focal point 30xf on the XZ plane of the lens 31 is set in the vicinity of the specific position 40, so that the beam of light (12, 22) entering the lens 31 can be regarded as being in the vicinity of the specific position 40 A beam of light emitted by a virtual light source with a smaller beam diameter. As a result, by the lens 31, the light beam (12, 22) traveling in the XZ plane can be converted into a substantially parallel light beam (13, 23).

In addition, the "near the specific position 40" referred to here refers to the case where the Z coordinate and the Z coordinate of the specific position 40 (hereinafter, simply referred to as "coordinate Z40") are exactly the same, as well as the area where the light is emitted When the displacement in the Z direction between the Z coordinate of (11, 21) (corresponding to the above "coordinate Z1") and the coordinate Z40 is set as za, the length of the coordinate Z40 within 25% of the displacement za is forward and backward in the Z direction The area of displacement.

Also, although the focal point 30xf on the XZ plane of the lens 31 is preferably near the specific position 40, as long as the interval d1 of the beam of light (12, 22) in the X direction is greater than the interval of the light exit area (11, 21) If the d0 is still short, it may be located at a position deviated from the vicinity of the specific position 40 in the Z direction.

[verification] According to the semiconductor laser light source device 1 of this embodiment, the point that the light beam (13, 23) emitted from the lens 31 is prevented from spreading in the slow axis direction (X direction) will be explained based on the simulation result. The simulation conditions are as follows.

(Comparative example 1) As shown in FIG. 5, the semiconductor laser light source device is taken as the structure of Comparative Example 1, which includes: semiconductor laser elements (100, 110) arranged in parallel to the light emission regions (101, 111) on the XZ plane A collimator lens 102 in which the focal distance Ff in the fast axis direction and the focal distance Fs in the slow axis direction are the same (4 mm).

In addition, the length of the distance d0 between the center position of the light exit region 101 and the center position of the light exit region 111 in the X direction is 112.5 μm. In addition, the shape of the light exit area 101 and the light exit area 111 on the XY plane is defined as a rectangular shape with a length in the X direction of 75 μm and a length in the Y direction of 1 μm.

Also, the divergence angle of the light beam (101L, 111L) emitted from the light exit area (101, 111) in the fast axis direction (Y direction) is set to 33˚, and the divergence angle in the slow axis direction (X direction) is set Is 12˚.

(Comparative Example 2) A semiconductor laser light source device is used as the structure of Comparative Example 2, which has: the angle θ ₁₁ and the angle θ ₁₂ shown in FIG. 8 are both set to 15 ˚, and each light emission area on the XZ plane (11 , 21) Semiconductor laser elements (10, 20) arranged at an angle of 30˚ to each other, and a collimator 102 whose focal distance Ff in the fast axis direction and focal distance Fs in the slow axis direction are the same (4mm). The length of the distance d0 between the center position of the light exit region 11 and the center position of the light exit region 21 in the X direction, and the shapes of the light exit region 11 and the light exit region 21 on the XY plane are the same as those of Comparative Example 1. In addition, the divergence angles of the fast axis direction and the slow axis direction of the light beams (12, 22) emitted from the respective light exit regions (11, 21) are also common to the light beams (101L, 111L) of Comparative Example 1.

(Embodiment 1) A semiconductor laser light source device 1 is used as the structure of Embodiment 1. It has: the angle θ ₁₁ and the angle θ ₁₂ shown in FIG. 8 are both set to 15 ˚ and each light exit area on the XZ plane (11, 21) Semiconductor laser elements (10, 20) arranged at an angle of 30° with respect to each other, and lens 31 with a focal distance Ff in the fast axis direction of 4 mm and a focal distance Fs in the slow axis direction of 3.9 mm. As for the length of the distance d0 between the center position of the light emitting area 11 and the center position of the light emitting area 21 in the X direction, and the shape of the light emitting area 11 and the light emitting area 21 on the XY plane, they are common to Comparative Examples 1 and 2 . In addition, the divergence angles of the fast axis direction and the slow axis direction of the light beams (12, 22) emitted from the respective light emitting regions (11, 21) are also the same as those of Comparative Example 1.

(Examples 2~7) Except for changing the focal length Fs in the slow axis direction, it is the same as the first embodiment. Specifically, it is as follows. • Example 2: The focal distance Ff in the fast axis direction of the lens 31 is set to 4 mm, and the focal distance Fs in the slow axis direction is set to 3.8 mm. • Example 3: The focal distance Ff in the fast axis direction of the lens 31 is set to 4 mm, and the focal distance Fs in the slow axis direction is set to 3.7 mm. • Example 4: The focal distance Ff in the fast axis direction of the lens 31 is set to 4 mm, and the focal distance Fs in the slow axis direction is set to 3.6 mm. • Example 5: The focal distance Ff in the fast axis direction of the lens 31 is set to 4 mm, and the focal distance Fs in the slow axis direction is set to 3.5 mm. • Example 6: The focal distance Ff in the fast axis direction of the lens 31 is set to 4 mm, and the focal distance Fs in the slow axis direction is set to 3.4 mm. -Example 7: The focal distance Ff in the fast axis direction of the lens 31 is set to 4 mm, and the focal distance Fs in the slow axis direction is set to 3.3 mm.

In the semiconductor laser light source devices of Comparative Examples 1 to 2, and Examples 1 to 7, the light intensity at each angle of the light beam group emitted from the collimator lens 102 or the lens 31 was calculated by simulation. Axis direction (Y direction) and slow axis direction (X direction). The results are shown in FIGS. 9A to 9I. In each figure, the horizontal axis is the angle, and the vertical axis is the relative value of light intensity. In addition, in each figure, "fast" corresponds to the divergence angle in the fast axis direction (Y direction), and "slow" corresponds to the divergence angle in the slow axis direction (X direction).

9J is a graph showing the results of Comparative Example 2 and Examples 1-7. In FIG. 9J, the horizontal axis is the focal distance Fs in the slow axis direction of the lens 31, and the vertical axis is the value of the half width at half maximum (HWHM) of the angular intensity distribution of the light beam group in the slow axis direction. In addition, in FIG. 9J, for comparison, the value of the half-maximum half-width of Comparative Example 1 is shown by a dotted line parallel to the horizontal axis. The other plot points are in order from the right side of the horizontal axis Fs to Examples 1 to 7, which is equivalent to the case where Fs is 3.9 mm to 3.3 mm.

As shown in FIG. 9A, in the case of the conventional semiconductor laser light source device (Comparative Example 1), it is known that the light beam group emitted from the collimator lens 102 is separated as two light beams in the slow axis direction. Moreover, according to the area where the light intensity shows the half-peak (full width at half-max), it is known that the two light beam groups have a divergence angle of about 4.4˚ in the slow axis direction. At this time, the half-width at half maximum (HWHM) value is about 2.2˚.

As shown in FIG. 9B, instead of the semiconductor laser elements (100, 110) of Comparative Example 1, the case of Comparative Example 2 which has semiconductor laser elements (10, 20) inclined to each other on the XZ plane is also the same as Similarly in Comparative Example 1, it is found that the light beam group after being emitted from the collimator lens 102 is separated as two light beams in the slow axis direction. In addition, the divergence angle of the light beam group in the slow axis direction is approximately 4.7˚ larger than that of Comparative Example 1. The half-width at half-maximum (HWHM) value at this time is approximately 2.4˚.

As shown in FIG. 9C, instead of the collimator lens 102 of Comparative Example 2, a lens 31 having a focal length Fs in the slow axis direction shorter than a focal distance Ff (4.0 mm) in the fast axis direction by 3.9 mm is provided. In the case of Example 1, as in Comparative Example 1 and Comparative Example 2, it is found that the light beam group after being emitted from the lens 31 is separated as two light beams (13, 23) in the slow axis direction. However, according to the region where the light intensity shows the half peak (full width at half maximum), it is known that in Example 1, the two light beam groups have a divergence angle of about 4.2˚ in the slow axis direction. As a result, compared with Comparative Example 1 and Comparative Example 2, in Example 1, the divergence angle in the slow axis direction can be suppressed. Also, the half-width at half maximum (HWHM) value at this time is approximately 2.1˚.

As shown in FIGS. 9D to 9G, if the focal distance Fs in the slow axis direction is gradually shorter than in Example 1 (Examples 2 to 5), it is known that the intensity distribution in the slow axis direction will be accompanied by this. The half-width of the peak is further reduced. This means that the divergence angle of the light beam group in the slow axis direction after being emitted from the lens 31 can be further suppressed. Furthermore, according to the results of Examples 3 to 5, it is known that the light beam groups after being emitted from the lens 31 overlap each other in the slow axis direction.

In addition, when the focal length Fs in the slow axis direction is further reduced from Example 5 (Example 6, Example 7), it is confirmed that the half-width of the intensity distribution in the slow axis direction shows an upward trend (refer to FIGS. 9H~ 9J). However, in Example 6, the full width at half maximum of the light intensity in the slow axis direction is about 2.0˚ (the full width at half maximum is about 1.0˚). In Example 7, the full width at half maximum in the slow axis direction is about 3.2˚ (Half width at half maximum is about 1.6˚). That is, even in Examples 6 and 7, compared with Comparative Example 1 and Comparative Example 2, the half-value width of the light intensity in the slow axis direction is smaller, and it is known that the light beam group in the slow axis direction The divergence angle is suppressed.

The state of Examples 6 and 7, as shown in FIG. 8, the focal point 30xf on the XZ plane of the lens 31 is positioned at a specific position 40 that is more than the intersecting point of the chief ray 12m and the chief ray 22m on the XZ plane. A position close to the lens 31 in the Z direction (the direction of the optical axis 30A). That is, at this position, the interval d1 between the chief rays (12m, 22m) is wider than the specific position 40, but is closer than the interval d0 between the end faces of the light exit regions (11, 21). Therefore, it can be concluded that the diffusion of the light beams (13, 23) in the slow axis direction (X direction) can be suppressed compared to Comparative Example 1.

[Second Embodiment] Regarding the second embodiment of the semiconductor laser light source device of the present invention, the description will be focused on the parts different from the first embodiment.

In the first embodiment, as described above, the refractive optical system 30 is an optical system in which the focal length on the YZ plane and the focal length on the XZ plane are different. In the first embodiment, the refractive optical system 30 is composed of a single lens 31, but in this embodiment, the refractive optical system 30 is composed of a plurality of lenses, and this point is different. In addition, the other structure is common to the first embodiment.

In more detail, as shown in FIG. 10, in the semiconductor laser light source device 1 of the present embodiment, the refractive optical system 30 includes a first lens 32 and a second lens 33.

The first lens 32 only has the function of suppressing the divergence to the Y direction (fast axis direction) for the light beam (12, 22) traveling in the Z direction, and does not have the function of suppressing the divergence to the X direction (slow axis direction), Sometimes it is called FAC (Fast Axis Collimation) lens. On the other hand, the second lens 33 only has the function of suppressing the spread of the light beams (12, 22) traveling in the Z direction in the X direction (slow axis direction), and does not have the function of suppressing the Y direction (fast axis direction). The function of diffusion is sometimes called the name of SAC (Slow Axis Collimation) lens.

The first lens 32, like the lens 31 of the first embodiment, has the focal point 30yf on the YZ plane arranged near the position of the light emitting area (11, 21) of the semiconductor laser element (10, 20). In addition, the second lens 33, like the lens 31 of the first embodiment, arranges the focal point 30xf on the XZ plane near the specific position 40 where the chief ray 12m and the chief ray 22m intersect.

The first lens 32 performs the same function as the lens 31 described in the first embodiment for the light beam (12, 22) traveling in the YZ plane. On the other hand, the second lens 33 does not have the function of refracting the light beam (12, 22) traveling on the YZ plane, and the incident light beam will directly penetrate. As a result, as shown in the upper part of FIG. 10, the light beams (12, 22) emitted from the respective light exit regions (11, 21) and traveling in the YZ plane pass through the first lens 32 and the second lens 33 In the same way as the first embodiment, it is converted into a substantially parallel light beam (13, 23).

The first lens 32 does not have the function of refracting the light beam (12, 22) traveling on the XZ plane, and the incident light beam will directly penetrate. On the other hand, the second lens 33 performs the same function as the lens 31 described in the first embodiment for the light beam (12, 22) traveling in the XZ plane. As a result, as shown in the lower part of FIG. 10, the light beams (12, 22) emitted from the respective light emitting areas (11, 21) and traveling on the XZ plane pass directly through the first lens 32 and then enter The second lens 33 will refract. Here, as in the first embodiment, the second lens 33 arranges the focal point 30xf on the XZ plane near the specific position 40 where the chief ray 12m and the chief ray 22m intersect, so the beam of light after passing through the second lens 33 ( 13, 23), the respective chief rays (13m, 23m) will become approximately parallel on the XZ plane. As a result, as in the first embodiment, the light beams (13, 23) after passing through the second lens 33 also become substantially parallel light beams on the XZ plane.

Therefore, in the semiconductor laser light source device 1 of the present embodiment, for the same reason as the first embodiment, a light beam (13, 23) whose divergence angle in the slow axis direction (X direction) is suppressed can be obtained.

[Third Embodiment] Regarding the second embodiment of the semiconductor laser light source device of the present invention, the description will be focused on the parts different from the first embodiment.

In the first embodiment, as described above, the refractive optical system 30 is an optical system in which the focal length on the YZ plane and the focal length on the XZ plane are different. In the first embodiment, the refractive optical system 30 is composed of a single lens 31, but in this embodiment, similarly to the second embodiment, the refractive optical system 30 is composed of a plurality of lenses. different. In addition, the other structure is common to the first embodiment.

In more detail, as shown in FIG. 11, in the semiconductor laser light source device 1 of the present embodiment, the refractive optical system 30 includes a first lens 34 and a second lens 35.

The first lens 34, with reference to FIGS. 2A and 2B and similar to the above-mentioned collimator 102, shows that the light beams (12, 22) traveling in the Z direction are suppressed in the Y direction (fast axis direction) and X direction (Slow axis direction) the function of diffusion. Moreover, the second lens 35 only has the function of suppressing the diffusion to the X direction (slow axis direction) for the light beam (12, 22) traveling in the Z direction, and does not have the function of suppressing the diffusion to the Y direction (fast axis direction) Functional and composed of cylindrical lenses. In addition, the above-mentioned SAC lens can be used in the second embodiment.

The first lens 34, like the lens 31 of the first embodiment, has the focal point 30yf on the YZ plane arranged near the position of the light emitting area (11, 21) of the semiconductor laser element (10, 20). In addition, the first lens 34 is a general collimator lens, so the focal length in the Y direction is the same as the focal length in the X direction. Therefore, although not shown, the focal point of the first lens 34 on the XZ plane is also near the position of the light emitting area (11, 21) of the semiconductor laser element (10, 20).

On the other hand, the second lens 35 makes the focal point on the XZ plane different from that of the first lens 34, thereby exhibiting the function of substantially shifting the focal point on the XZ plane of the first lens 34 to the Z direction. That is, the second lens 35 adjusts the focal point so that the focal point 30xf on the XZ plane of the combined optical system (refractive optical system 30) of the first lens 34 is positioned at the specific intersection of the chief ray 12m and the chief ray 22m. Location near 40.

The first lens 34 performs the same function as the lens 31 described in the first embodiment for the light beam (12, 22) traveling on the YZ plane. On the other hand, the second lens 33 does not have the function of refracting the light beam (12, 22) traveling on the YZ plane, and the incident light beam will directly penetrate. As a result, as shown in the upper part of FIG. 11, the light beams (12, 22) emitted from the respective light emitting areas (11, 21) and traveling in the YZ plane pass through the first lens 32 and the second lens 33 In the same way as the first embodiment, it is converted into a substantially parallel light beam (13, 23).

The first lens 34 also exhibits a refraction function for the light beams (12, 22) traveling on the XZ plane. Therefore, if the light beam (12, 22) passes through the first lens 34 on the XZ plane, it enters the second lens 35 after being refracted. Here, as described above, the second lens 35 and the first lens 34 are combined with the optical system so that the focal point 30xf on the XZ plane is located near the specific position 40. Therefore, if the light beams (12, 22) travel on the XZ plane and pass through the second lens 35, they are converted into substantially parallel light beams (13, 23) for the same reason as in the first embodiment.

Therefore, in the semiconductor laser light source device 1 of the present embodiment, for the same reason as the first embodiment, a light beam (13, 23) whose divergence angle in the slow axis direction (X direction) is suppressed can be obtained.

[Other embodiments] Hereinafter, other embodiments will be described.

<1> In the above embodiment, it is explained that the semiconductor laser element (10, 20) is arranged obliquely so that the chief ray 12m of the light beam 12 emitted from the light emission region 11 of the semiconductor laser element 10 The chief ray 22m of the light beam 22 emitted from the light exit area 21 of the laser element 20 gradually approaches in the X direction as it travels in the Z direction. However, as shown in FIG. 12, the semiconductor laser elements (10, 20) may be arranged obliquely so that the chief ray 12m and the chief ray 22m may be separated in the X direction (slow axis direction) as they travel in the Z direction.

In the case of this structure, if each chief ray (12m, 22m) is extended virtually to the side (−Z direction) opposite to the light exit area (11, 21), it will be from the opposite to the light exit area (11, 21) There will be positions where the chief rays (12ma, 22ma) of the light beams virtually emitted from the end faces (11a, 12a) on the side intersect each other. The staggered position is set as the above-mentioned specific position 40, and the focal point 30xf on the XZ plane of the lens 31 may be located near the specific position 40.

Even with this structure, similar to the first embodiment, the beam of light (12, 22) that enters the lens 31 on the XZ plane can be regarded as having a smaller diameter than the beam that seems to exist near the specific position 40 A beam of light emitted by a small virtual light source. As a result, by the lens 31, the light beam (12, 22) traveling in the XZ plane can be converted into a substantially parallel light beam (13, 23).

In addition, in FIG. 12, in the first embodiment, the refracting optical system 30 is illustrated as being composed of the above-mentioned lens 31, but the structure of the second embodiment and the third embodiment may be adopted.

<2> In the second embodiment and the third embodiment, the case where the refractive optical system 30 has two lenses has been described. However, the present invention does not exclude the case where the refractive optical system 30 has three or more lenses.

<3> In each of the above embodiments, the two semiconductor laser elements (10, 20) mounted on the same heat sink 5 are connected in series, and power is supplied through the external lead 4. However, the present invention does not exclude the case where two semiconductor laser elements (10, 20) mounted on the same heat sink 5 are connected in parallel with each other.

<4> In each of the above-mentioned embodiments, the case where the semiconductor laser light source device 1 is mounted on the same heat sink 5 with two semiconductor laser elements (10, 20) has been exemplified. However, the semiconductor laser light source device 1 of the present invention may include three or more semiconductor laser elements on the same heat sink 5. In this case, it is only necessary to arrange so that the chief rays emitted from the light emission regions of at least two semiconductor laser elements are non-parallel to each other, and the chief rays arranged so that the chief rays emitted from two adjacent light emission regions become mutually. Non-parallel is better. Furthermore, it is more preferable that the chief rays emitted from all adjacent light emitting regions are not parallel to each other.

<5> In each of the above embodiments, the case where each semiconductor laser element (10, 20) is provided with one light emitting region (11, 21) has been described. However, each semiconductor laser element (10, 20) may have a structure (multi-emitter type) each having a plurality of light emission regions.

<6> The refractive optical system 30 described in each embodiment may be housed inside the housing member 6, may also be used for the window member 7, or may be arranged outside the housing member 6.

1: Semiconductor laser light source device 4: External wire 5: heat sink 6: Shell components 7: Window components 10: Semiconductor laser components 11: Light exit area 12: light beam 20: Semiconductor laser components 21: Light exit area 22: light beam 30: Refractive optical system 30A: Optical axis of refractive optical system 30xf: The second focus of the refractive optical system 30yf: the first focus of the refractive optical system 31: lens 32: The first lens 33: second lens 34: The first lens 35: second lens 40: specific location 100: Semiconductor laser components 101: Light exit area (emitter) 101L: the beam of light emitted from the emitter 102: collimator lens 120: light source module 121: auxiliary seat θy: divergence angle in the fast axis direction θx: divergence angle in the slow axis direction

[Fig. 1A] is a perspective view schematically showing the structure of a semiconductor laser element. [FIG. 1B] is a schematic diagram showing the situation when the light beam emitted from the semiconductor laser element of FIG. 1A is viewed from the X direction and the situation when viewed from the Y direction. [FIG. 2A] is a diagram schematically showing a beam of light traveling in the YZ plane direction when a collimator lens is arranged at the rear of the semiconductor laser element. [FIG. 2B] is a diagram schematically showing the beam of light traveling in the XZ plane direction when a collimator lens is arranged at the rear stage of the semiconductor laser element. [FIG. 3A] is a perspective view schematically showing the structure of a light source module equipped with a plurality of semiconductor laser elements. [Fig. 3B] is a schematic diagram when viewing the emitter included in the light source module of Fig. 3A from the direction of the optical axis. [Fig. 4] is a schematic diagram showing the situation when the light beam emitted from the light source module of Fig. 3A is viewed from the X direction and the situation when viewed from the Y direction. [Fig. 5] is a diagram schematically showing the light beam traveling in the XZ plane direction when the collimator lens is arranged at the rear stage of the light source module of Fig. 3A. [Fig. 6] is a diagram schematically showing the structure of the first embodiment of the semiconductor laser light source device. [Fig. 7] is a diagram schematically showing the structure of the semiconductor laser element included in the semiconductor laser light source device. [Fig. 8] is a partially enlarged view of the XZ top view shown in the lower part of Fig. 6. [FIG. 9A] is a graph showing the light intensity distribution at each angle in the slow axis direction and the fast axis direction shown by the light beam group emitted from the collimator lens in the semiconductor laser light source device of Comparative Example 1. [FIG. 9B] is a graph showing the light intensity distribution of each angle in the slow axis direction and the fast axis direction shown in the light beam group after the collimator lens in the semiconductor laser light source device of Comparative Example 2. [FIG. 9C] is a graph showing the light intensity distribution at each angle in the slow axis direction and the fast axis direction shown in the light beam group after the light beam emitted from the lens in the semiconductor laser light source device of the first embodiment. [FIG. 9D] is a graph showing the light intensity distribution of each angle in the slow axis direction and the fast axis direction shown in the light beam group after the light beam emitted from the lens in the semiconductor laser light source device of the second embodiment. [FIG. 9E] is a graph showing the light intensity distribution at each angle in the slow axis direction and the fast axis direction shown in the light beam group emitted from the lens in the semiconductor laser light source device of the third embodiment. [FIG. 9F] is a graph showing the light intensity distribution at each angle in the slow axis direction and the fast axis direction shown in the light beam group emitted from the lens in the semiconductor laser light source device of the fourth embodiment. [FIG. 9G] is a graph showing the light intensity distribution at each angle in the slow axis direction and the fast axis direction shown in the light beam group after the light beam emitted from the lens in the semiconductor laser light source device of the fifth embodiment. [FIG. 9H] is a graph showing the light intensity distribution of each angle in the slow axis direction and the fast axis direction shown in the light beam group after the light beam emitted from the lens in the semiconductor laser light source device of the sixth embodiment. [FIG. 9I] is a graph showing the light intensity distribution at various angles in the slow axis direction and the fast axis direction shown by the light beam group emitted from the lens in the semiconductor laser light source device of the seventh embodiment. [FIG. 9J] In the semiconductor laser light source devices of Examples 1-7 and Comparative Example 2, the light intensity distribution at each angle between the slow axis direction and the fast axis direction shown by the group of light beams emitted from the lens Chart. [Fig. 10] is a diagram schematically showing the structure of the second embodiment of the semiconductor laser light source device. [Fig. 11] is a diagram schematically showing the structure of the third embodiment of the semiconductor laser light source device. [Fig. 12] is a diagram schematically showing the structure of another embodiment of the semiconductor laser light source device.

1: Semiconductor laser light source device

10: Semiconductor laser components

11: Light exit area

12: light beam

12m: chief ray

13: light beam

13m: chief ray

20: Semiconductor laser components

21: Light exit area

22: light beam

22m: chief ray

23: light beam

23m: chief ray

30: Refractive optical system

30A: Optical axis of refractive optical system

30xf: The second focus of the refractive optical system

30yf: the first focus of the refractive optical system

31: lens

dz: distance

Claims (9)

A semiconductor laser light source device, characterized in that it has: heat sink, A plurality of semiconductor laser elements formed on the surface of the aforementioned heat sink and having a light emitting area, and A refractive optical system that enters the light beams emitted from the light-exiting regions of the plurality of semiconductor laser elements and changes the direction of travel to be emitted, At least two of the semiconductor laser elements are arranged obliquely to each other when viewed in a first direction orthogonal to the surface of the heat sink, so that each of the semiconductor laser elements emits the light from the respective light emitting regions The principal rays of the light beam become non-parallel to each other, The refractive optical system is composed of an optical system that displaces a first focus and a second focus in the optical axis direction, and the first focus is formed by the first direction and the optical axis direction of the refractive optical system The focal point on the first plane, and the second focal point is the focal point on the second plane formed by the optical axis direction and the second direction orthogonal to the first direction. The semiconductor laser light source device according to claim 1, wherein: When the distance between the chief rays of light emitted from the light emitting area of the adjacent semiconductor laser element in the second direction is defined as d1, The plurality of semiconductor laser elements are arranged obliquely to each other in the direction of the optical axis, from the light exit area to a specific position on the side of the light exit area than the refractive optical system, and follow the optical axis Directional travel makes the aforementioned interval d1 smaller. The semiconductor laser light source device according to claim 2, wherein the second focal point is located closer to the refractive optical system in the optical axis direction than the first focal point. The semiconductor laser light source device according to claim 1, wherein: The chief rays emitted from the light emission regions of the adjacent semiconductor laser elements are virtually extended in the second direction of the resulting virtual chief rays in the direction opposite to the refractive optical system When set to d1, The plurality of semiconductor laser elements are arranged obliquely to each other such that in the direction of the optical axis, from the virtual light emitting area corresponding to the end face at the position opposite to the light emitting area to a specific position, it follows Traveling in the opposite direction of the optical axis direction reduces the aforementioned interval d1. The semiconductor laser light source device according to claim 4, wherein the second focal point is located further away from the refractive optical system in the optical axis direction than the first focal point. The semiconductor laser light source device according to any one of claims 1 to 5, wherein the refractive optical system is composed of a single lens that makes the focal length in the first direction different from the focal length in the second direction Constructor. The semiconductor laser light source device according to any one of claims 1 to 5, wherein: The aforementioned refractive optical system has: For the light beam emitted from the light exit area, the first lens having the first focal point that reduces the divergence angle in the first direction is used as the focal point; and The second lens is arranged at a rear stage of the first lens, and for the beam of light emitted from the light exit area, the second focal point whose divergence angle in the second direction is reduced is a second lens. The semiconductor laser light source device according to any one of claims 1 to 5, wherein: The aforementioned refractive optical system has: For the beam of light emitted from the light exit area, a first lens focusing on the first focal point at which the divergence angles in the first direction and the second direction are reduced; and The second lens is arranged at a rear stage of the first lens, and for the beam of light emitted from the light exit area, the second focal point whose divergence angle in the second direction is reduced is a second lens. The semiconductor laser light source device according to any one of claims 1 to 5, wherein the plurality of semiconductor laser elements are connected in series.

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