TW202028848A - Led light source device having directivity, method for manufacturing led light source device, and projector - Google Patents

Abstract

Problem: To provide an LED light source device and a projector capable of irradiating light with a greater luminous flux amount, and a small light distribution angle with uniform intensity. Solution: This LED light source device has: an LED chip 14; a reflector 20 surrounding the periphery of the LED chip 14; and a translucent member 30 for which the top surface configured by a translucent material is formed in a lens shape, wherein the translucent member 30 has a first high refractive index layer 31 which is a layer that contacts the LED chip 14 without gaps, and is a layer having a refractive index of light of 90% or greater with respect to the refractive index of light of the LED chip 14.

Description

LED light source device with directivity, manufacturing method of LED light source device, and projector

The present invention relates to an LED light source device with directivity, a manufacturing method of the LED light source device, and a projector.

A conventionally known LED light source device is provided with a reflector that functions as a reflecting surface on the inner periphery (see Patent Document 1, for example).

[Prior Technical Literature] [Patent Literature]

Patent Document 1: International Publication No. 2016/199804

The conventional technology is equipped with a reflector, which can increase the amount of light irradiated from the LED light source device to a certain extent, and can reduce the radiation angle of the light to a certain extent, but in recent years, it is expected that the amount of irradiated light beams will be larger and the radiation angle will be smaller. Zhiguang's LED light source device and projector. Moreover, in the case of a reflector structure, it is quite difficult to fabricate the reflector in a way that the light intensity distribution is uniform, and there is a demand for LED light source devices and projectors that can irradiate light with uniform intensity.

The object of the present invention is to provide an LED light source device, a method for manufacturing the LED light source device, and a projector that can irradiate light with a larger amount of light beam, a small emission angle, and uniform intensity.

The LED light source device according to the first aspect of the present invention includes an LED chip, a reflector surrounding the LED chip, and a light-transmitting member composed of a light-transmitting material and having a lens-like upper surface; The optical member has a first high refractive index layer, which is adjacent to the layer of the LED chip without voids, and has an optical refractive index of 90% or more relative to the optical refractive index of the LED chip的层。 The layer.

In the above LED light source device, the translucent member system further includes: a low refractive index layer having a light refractive index lower than that of the first high refractive index layer; and the low refractive index layer system may be configured to be laminated without voids on the The upper surface of the first high refractive index layer.

In the above-mentioned LED light source device, the translucent member system further includes: a second high refractive index layer having a higher light refractive index than the low refractive index layer; and the second high refractive index layer system may constitute a laminated layer without voids On the upper surface of the low refractive index layer, the upper surface is formed into a lens shape.

In the LED light source device, the first high refractive index layer is made of translucent resin or glass; the low refractive index layer is made of translucent resin; and the second high refractive index layer is made of translucent resin or glass. Composition of glass.

In the above LED light source device, the second high refractive index layer may be configured to form a lens with an upper surface and a bottom surface.

In the above LED light source device, the first high refractive index layer may be configured to form a lens on the upper surface.

In the above LED light source device, the first high refractive index layer may be formed with a phosphor layer containing a phosphor.

In the LED light source device, the light-transmitting member does not contain sulfur.

The LED light source device according to the second aspect of the present invention is provided with: an LED chip, a reflector surrounding the LED chip, and a light-transmitting member composed of a light-transmitting material and having a lens-like upper surface; The optical member is adjacent to the LED chip without gaps, and also adjacent to the upper surface of the reflector without gaps.

In the LED device, the light-transmitting member has a light refractive index of 80% or more with respect to the light refractive index of the LED chip.

In the LED device, the light-transmitting member is integrally formed.

The above-mentioned LED device is further provided with: an outflow prevention portion for preventing the outflow of the light-transmitting material when the light-transmitting member is integrally formed by filling the light-transmitting material inside the reflector External use.

In the LED device, the light-transmitting member system does not contain sulfur.

The projector of the present invention includes: an LED light source device for red light, a transmissive liquid crystal panel for red light that modulates the light emitted from the above-mentioned LED light source device for red light, and an LED light source device for green light; A transmissive liquid crystal panel for green light, an LED light source device for blue light that modulates light emitted from the above-mentioned LED light source device for green light, and an LED light source device that modulates light emitted from the above-mentioned LED light source device for red light A transmissive liquid crystal panel for red light, a two-color beam that combines red light, green light, and blue light, and a projection optical system that projects synthesized light from the two-color beam; wherein the above-mentioned LED light source device for red light The LED light source device for green light and the LED light source device for blue light are composed of the LED light source device.

According to the present invention, it is possible to provide: a large amount of irradiated beams, a small radiation angle, and Uniform light LED light source device, manufacturing method of LED light source device, and projector.

1, 1a, 1R, 1G, 1B‧‧‧LED light source device

4‧‧‧Projector device

11‧‧‧Mounting board

12, 12a‧‧‧wiring layer

13, 13a‧‧‧Solder mask

14‧‧‧LED chip

15‧‧‧Insulation layer

16‧‧‧Next layer

17‧‧‧Metal substrate

18‧‧‧Wire

20‧‧‧Reflector

21‧‧‧Upper surface

22‧‧‧Opening

23‧‧‧Babe

24‧‧‧Concave

30, 30a, 30b‧‧‧Translucent member

31‧‧‧The first high refractive index layer

31a‧‧‧High refractive index layer

32‧‧‧Low refractive index layer

33‧‧‧The second high refractive index layer

41‧‧‧Two-color 稜鏡

42, 42R, 42G, 42B‧‧‧Collimator lens

43, 43R, 43G, 43B‧‧‧LCD light valve

44‧‧‧Projection optical system

311‧‧‧ Phosphor layer

312‧‧‧Non-fluorescent body layer

313‧‧‧Bottom

L‧‧‧Projection light

Fig. 1 is a schematic diagram of the projector of this embodiment.

Fig. 2 is a plan view of the LED light source device of the first embodiment.

Fig. 3 is a cross-sectional view taken along the line III-III of the LED light source device shown in Fig. 2.

Fig. 4 is an explanatory diagram of the LED light source device and the projector used in the simulation.

Fig. 5 is a simulation result diagram of the relationship between the distance from the optical axis of the LED chip and the beam density in Example 1.

Fig. 6 is a simulation result diagram of the relationship between the distance from the optical axis of the LED chip and the beam density in Example 2.

Fig. 7 is a cross-sectional view of an LED light source device according to a second embodiment.

Fig. 8 is a cross-sectional view of an LED light source device according to a third embodiment.

Fig. 9 is a cross-sectional view of an LED light source device according to a fourth embodiment.

Figure 10 is a graph showing the simulation results of the beam volume when using translucent members with different refractive indices.

Fig. 11 is a cross-sectional view of an LED light source device according to another embodiment.

Hereinafter, embodiments of the present invention will be described based on the drawings.

"First Embodiment"

(Projector device)

Fig. 1 shows a configuration diagram of a projector device 4 of this embodiment. The projector device 4 of this embodiment is equipped with: 3 LED light source devices 1, 3 collimators A mirror 42, three liquid crystal light valves 43, a two-color rim 41, and a projection optical system 44.

The LED light source device 1, the collimator lens 42 and the liquid crystal light valve 43 are used to radiate R (red), G (green), and B (blue) light to the two-color beam 41. The red light (R light) from the LED light source device 1R is parallelized by the collimator lens 42R, and the light is modulated by the liquid crystal light valve 43R. The liquid crystal light valve 43R is a transmissive liquid crystal panel (HTPS liquid crystal panel) arranged in a matrix, and a known light modulator that modulates the R light with the image signal for each pixel. The green light (G light) from the LED light source device 1G and the blue light (B light) from the LED light source device 1B are also parallelized by collimator lenses 42G and 42B, and then performed by well-known liquid crystal light valves 43G and 43B. Light modulation.

The two-color film 41 has two two-color films arranged orthogonal to each other. One of the two-color film reflects R light, while G and B light other than R light penetrates, and the other two-color film reflects B light. , So that R light and G light except B light penetrate. The projection optical system 44 is provided with a plurality of projection lenses for incident light synthesized by the dichroic lens 41, and a projection lens housing for accommodating the plurality of projection lenses, and radiates projection light L to enlarge and project a color image on the screen.

(LED light source device)

Next, the LED light source device 1 of the first embodiment constituting the projector device 4 shown in FIG. 1 will be described.

FIG. 2 shows a plan view of the LED light source device 1 of this embodiment, and FIG. 3 shows a cross-sectional view taken along the line III-III of the LED light source device 1 shown in FIG. 2. The LED light source device 1 of this embodiment is shown in FIGS. 2 and 3, and includes: a mounting substrate 11, a wiring layer 12 formed on the upper surface of the mounting substrate 11, a solder resist layer 13 for protecting the wiring layer 12, and a plurality of LED chips 14 , Reflector 20, and translucent member 30. In addition, the figure In the examples of 2 and 3, the LED light source device 1 is configured with 9 LED chips 14 in series 3×3 in parallel. The number of LED chips 14 is not limited, and it can be 1 or 2 to 8 , It can also reach more than 10.

The LED chip 14 is a surface mount type matched LED chip. In this embodiment, the LED chip 14 is an LED chip with a sapphire substrate that emits blue light. However, the LED chip 14 is not particularly limited. For example, gallium nitride-based (GaN, AlGaN, InGaN) LED chips, LED chip irradiated with ultraviolet light (especially UVA). In this embodiment, the LED chip 14 is mounted and soldered to the wiring layer 12 by flip chip mounting, but it is not limited to this configuration. For example, the LED chip 14 may be soldered by wire bonding.

In this embodiment, a large number of LED chips 14 are arranged in series n×parallel m (for example, in this embodiment, series 3×parallel 3) two-dimensional arrangement, so-called COB (Chip On Board) mounting. In order to achieve high brightness, the LED chip 14 uses, for example, an LED chip with a maximum rated current of 300 mA or more, preferably a maximum rated current of 400 mA or more, and more preferably a maximum rated current of 500 mA or more. For example, when the light valve 43 is 0.5-0.7", from the aspect of Etendue, the size of the LED chip 14 is preferably less than 3 to 4 mm square, more preferably less than 1.5 mm square.

For example, in this embodiment, the LED chip 14 uses an LED chip with a maximum rated current of 2 to 4A. In this case, the heat generated by the LED chip 14 is also large, and the heat of the LED chip 14 must be efficiently dissipated. Therefore, in this embodiment, a high heat dissipation insulator such as aluminum nitride and silicon nitride is used for the mounting substrate 11. Thereby, by efficiently transferring the heat of the LED chip 14 to the mounting substrate 11 for heat dissipation, the durability of the LED light source device 1 can be improved. For example, when an insulating layer made of glass epoxy resin is laminated on a mounting substrate made of copper plate to ensure insulation, the thermal resistance (θ jc) of the mounting substrate made of copper plate is 10~ per mm ² of the chip. 12°C/W, and the thermal resistance (θ jc) of the mounting substrate 11 made of aluminum nitride is 2 to 4°C/W. Accordingly, when aluminum nitride is used as the mounting substrate 11, the heat generated by the LED chip 14 can be efficiently dissipated.

As shown in FIG. 3, a wiring layer 12 is formed on the mounting substrate 11. The wiring layer 12 is a metal film such as copper foil. In addition, the wiring layer 12 is electrically coupled to a power supply and control device not shown. The wiring layer 12 is formed by photoetching the copper foil to remove unnecessary parts. In addition, in FIG. 2, the wiring layer 12 is omitted from the illustration. In addition, the material used for the wiring layer 12 is not limited to the copper foil film, and metals such as silver paste and copper paste may also be used. The wiring layer 12 uses NiCrAu, NiPdAu, etc., and is surface-treated by electroplating.

Furthermore, a solder resist layer 13 is laminated on part of the wiring layer 12. The main components of the solder mask layer 13 are silicone resin, glass epoxy resin, and polyamide resin, and have the function of protecting the wiring layer 12. In addition, the solder resist layer 13 contains, for example, white inorganic pigments such as titanium oxide (TiO ₂ ), zinc oxide, and aluminum oxide, and may also function as a reflective material.

In the LED light source device 1, as shown in FIGS. 2 and 3, a reflector 20 is provided so as to surround the periphery of the LED chip 14. The reflector 20 may be configured to be provided with a light-reflecting metal film such as aluminum that causes regular reflection on at least the inner surface. In addition, the entire reflector may be formed of aluminum or the like. In this embodiment, after the LED chip 14 is soldered, the reflector 20 is formed on the solder mask 13. In addition, in this embodiment, the plurality of LED chips 14 are surrounded by one reflector 20, but each LED chip 14 may be surrounded by the reflector 20, respectively.

Next, the translucent member 30 of the present embodiment will be described. The translucent member 30 is made of translucent materials such as glass and translucent resin materials. The upper surface forms a lens shape. As shown in FIG. 3, the light-transmitting member 30 includes a first high refractive index layer 31, a low refractive index layer 32, and a second high refractive index layer 33.

The first high refractive index layer 31 is, for example, a transparent resin made of epoxy or silicone, or a translucent layer made of glass, and has a refractive index of 90% or more with respect to the light refractive index of the LED chip 14. Translucent layer of light refractive index. For example, when the LED chip 14 is an LED chip with a sapphire substrate, since the light refractive index n of the LED chip is 1.768, the light refractive index n of the first high refractive index layer 31 is set to 1.591 or more. That is, the light-transmitting resin of polysiloxane resin is usually used, and the optical refractive index is about 1.4 to 1.57. However, if the first high refractive index layer of the present embodiment uses a highly refractive resin with an optical refractive index n of 1.591 or more. Such highly refractive resins can be used, for example, LPL-1150 (Mitsubishi Gas Chemicals) with an optical refractive index n of 1.76, MR-174 (Mitsui Chemicals) with an optical refractive index n of 1.74, and OKP ( Osaka Gas Chemicals) etc.

Furthermore, as shown in FIG. 3, the first high refractive index layer 31 includes a phosphor layer 311 containing a phosphor, and a non-fluorescent layer 312 that does not contain a phosphor. In other words, the phosphor layer 311 and the non-phosphor layer 312 together constitute the first high refractive index layer 31 having an optical refractive index of 90% or more with respect to the optical refractive index of the LED chip 14. In addition, when the LED chip 14 itself irradiates red light, green light, or blue light, the phosphor layer 311 for irradiating red light, green light, or blue light is not needed, and only non-fluorescent light The bulk layer 312 constitutes the first high refractive index layer 31. In this embodiment, since the LED chip 14 for irradiating blue light is provided, the phosphor layer 311 is provided for irradiating red or green light.

For the phosphor layer 311, a phosphor is mixed into the high refractive resin used to form the first high refractive index layer 31, and the high refractive resin mixed into the phosphor is made to adjoin the LED chip 14 without gaps. The reflector 20 is filled to exceed the LED crystal The sheet 14 is formed at the upper surface position. In addition, the phosphor contained in the phosphor layer 311 is not particularly limited, and can be appropriately set according to the required light color. In addition, this embodiment exemplifies a structure in which phosphor is mixed with a high-refractive resin to form the phosphor layer 311, but it is not limited to this structure. For example, the phosphor layer 311 may be attached to the upper surface of the LED chip 14. A phosphor layer 311 is layered on the surface of the LED chip 14.

On the upper surface of the phosphor layer 311, a non-phosphor layer 312 made of a high-refractive material without phosphor is laminated. The upper surface of the non-phosphor layer 312 is formed into a lens shape (curved surface). The lens shape of the non-fluorescent body layer 312 is designed by a known method so that the boundary surface between the non-fluorescent body layer 312 and the low refractive index layer 32 hardly causes total reflection. For example, in this embodiment, the upper surface of the non-phosphor layer 312 is in a state of radius R: 0.576 mm. The non-fluorescent body layer 312 is formed by using a mold having a curved surface corresponding to the shape of the upper surface of the non-fluorescent body layer 312, filling the mold with a high refractive index light-transmitting resin, and curing it. In addition, the non-phosphor layer 312 may be separately fabricated using a mold in advance, and then the non-phosphor layer 312 is hardened in the state where the manufactured non-phosphor layer 312 is laminated on the phosphor layer 311 to form the non-phosphor layer 312 It is attached to the upper surface of the phosphor layer 311 (especially when the non-fluorescent layer 312 is made of glass, it is better to manufacture separately). Thereby, the LED chip 14 is in close contact, and the first high refractive index layer 31 composed of the phosphor layer 311 and the non-phosphor layer 312 can be formed without a gap between the LED chip 14 and the LED chip 14. In addition, the method of curing the translucent resin may be, for example, a method of heating and curing using a metal mold, or a method of curing by irradiating UV light from the outside using a mold made of translucent glass or the like.

Furthermore, in this embodiment, the low refractive index layer 32 is laminated on the upper surface of the first high refractive index layer 31 without voids. The low refractive index layer 32 is a translucent resin layer made of, for example, epoxy-based, silicone-based transparent resin, and the low-refractive resin layer is formed in the reflector 20. Grease is filled up to the height of the upper surface of the reflector 20, and is formed by curing. In addition, the low refractive index layer 32 is a translucent resin layer having a light refractive index lower than that of the first high refractive index layer 31. For example, when the optical refractive index n of the first high refractive index layer 31 is 1.76, the refractive index n of the low refractive index layer 32 is less than 1.74. For such a low-refractive resin system, for example, OE6351 (Toray•Dow Corning Co., Ltd.) with an optical refractive index n of 1.54, KER6200 (Shin-Etsu Chemical Co., Ltd.) with an optical refractive index n of 1.51, etc. can be used.

Furthermore, in this embodiment, the second high refractive index layer 33 is laminated on the upper surface of the low refractive index layer 32 without voids. The second high refractive index layer 33 is a translucent layer made of a translucent material such as epoxy-based, silicone-based translucent resin, glass, and the like, and as shown in FIG. 3, the upper surface is formed in a lens shape. For example, a mold having a curved surface corresponding to the shape of the upper surface of the second high refractive index layer 33 is covered on the reflector 20, and the mold is filled with a high refractive index light-transmitting resin, and after hardening, the low refractive index layer The second high refractive index layer 33 is formed on the upper surface of 32 without voids. In addition, the related second high refractive index layer 33 is also the same as the first high refractive index layer 31. A metal mold is used and can be cured by heating. However, a mold made of translucent glass can also be used to irradiate from the outside. The method of curing by UV light. Also, as with the first high refractive index layer 31, the second high refractive index layer 33 may be separately manufactured using a mold in advance, and the manufactured second high refractive index layer 33 may be laminated on the low refractive index layer 32. The second high refractive index layer 33 is hardened to form the second high refractive index layer 33 and attached to the upper surface of the low refractive index layer 32 (especially when the second high refractive index layer 33 is made of glass, it is better to manufacture separately) .

The second high refractive index layer 33 is a translucent layer whose optical refractive index is higher than that of the low refractive index layer 32. For example, it is possible to form the second high refractive index layer 33 by using translucent resin or glass as in the first high refractive index layer 31. However, it is not limited to this structure Therefore, before the light refractive index is higher than the low refractive index layer 32, the refractive index lower than the first high refractive index layer 31, or high refractive index translucent resin or glass can also be used to form the second high refractive index layer.率层33. Furthermore, in this embodiment, the second high refractive index layer 33 is adjacent to the upper surface 21 of the reflector 20 without a gap, and forms an opening 22 covering the lower reflector 20 (when the reflector 20 is viewed from above, the upper surface 21. The opening on the inner side) has a wider range.

As described above, in this embodiment, the first high refractive index layer 31 is laminated in a state adjacent to the LED chip 14 without voids, and the low refractive index layer 32 and the second high refractive index layer 33 are also adjacent to the first without voids. The high-refractive index layer 31 and the low-refractive index layer 32 are laminated in a state where they can be closely attached to the LED chip 14 to form the light-transmitting member 30 without a gap between the LED chip 14 and the LED chip 14.

Next, the performance of the LED light source device 1 and the projector device 4 of this embodiment will be described. Example 1, as shown in FIG. 4, has an LED chip 14 with a width W of 1.0 mm. The height H1 of the reflector 20 is set to 0.7 mm, and the distance from the upper surface of the LED chip 14 to the second high refractive index layer 33 The height H2 of the apex of is set to 2.5 mm, the width L of the second high refractive index layer 33 is set to 5 mm, and the lens radius of the second high refractive index layer 33 is set to 2.78 mm to simulate the performance of the LED light source device 1. In addition, in Embodiment 1, as shown in FIG. 4, simulation was also performed on the projector device 4 in which the collimator lens 42 was installed in the irradiation direction of the LED light source device 1. The simulation results are as follows.

The following Table 1 shows the amount of light beam (lm) when receiving light on the light receiving surface 10 mm away from the position where the collimator lens 42 is arranged in the configurations (A) to (E) described below. Here, (A) is the structure of only the LED chip 14 (the reflector 20 and the translucent member 30 are not provided), and (B) is shown in FIG. 4 and only the second high refractive index is not provided in the LED light source device 1 The structure of the rate layer 33 (the translucent member 30 only has the first high refractive index layer 31 and The structure of the low refractive index layer 32), (C) is the same as the LED light source device 1 shown in FIG. 3, but also has a simulation result of the LED light source device having the structure of the second high refractive index layer 33. In addition, (D) is a configuration in which a collimator lens 42 is arranged in front of the LED light source device 1, as shown in FIG. 4, and (E) is a projector device with a beam with a light distribution angle of 12° or less in the beam of (D) 4 Simulation results.

As shown in Table 1 above, the beam volume of (B) is approximately 1.5 times lower than that of (A). This phenomenon is caused by laminating the first high-refractive index layer 31 in such a way that it is adjacent to the upper surface of the LED chip 14 without any gaps, thereby suppressing the light generated in the LED chip 14 and the LED chip 14 and the first high-refractive index layer The boundary surface of 31 is totally reflected and can be taken out of the LED chip 14 because of the reason. In addition, by making the upper surface of the first high refractive index layer 31 into a lens shape, it is also possible to suppress total reflection at the boundary surface of the first high refractive index layer 31 and the low refractive index layer 32. At the same time, in the first embodiment, By reducing the incident angle of the light beam incident from the low refractive index layer 32 to the outside by the reflector 20, increasing the inclination angle (a sharp tilt) of the reflector 20 can also suppress the boundary surface between the low refractive index layer 32 and the outside air. The total reflection can guide the beam to the outside.

Furthermore, compared to (B), the beam volume of (C) is increased by about 1.5 times. This phenomenon is caused by (B) that total reflection occurs on the boundary surface between the low refractive index layer 32 and the outside air, and part of the light beam is not radiated to the outside of the LED light source device 1. In contrast, (C) is caused by the low refractive index layer 32 , Because the lenticular second high refractive index layer 33 is formed on the upper surface, By suppressing the total reflection of the boundary surface between the second high refractive index layer 33 and the outside air, more light beams can be radiated to the outside of the LED light source device 1.

Accordingly, by laminating the first high refractive index layer 31 so as to be adjacent to the LED chip 14 without voids, the light generated by the LED chip 14 can be suppressed on the boundary surface between the LED chip 14 and the first high refractive index layer 31 The total reflection at the position can be taken out from the LED chip 14. In addition, by making the upper surface of the first high refractive index layer 31 into a lens shape, it is possible to suppress the total reflection of the boundary surface between the first high refractive index layer 31 and the low refractive index layer 32, so that the light beam can be radiated to the LED light source. The exterior of the device 1. In addition, by making the upper surface of the second high refractive index layer 33 into a lens shape, the total reflection of the boundary surface between the second high refractive index layer 33 and the outside air can be suppressed, so that more light beams can be radiated to the LED light source device. 1 outside. In addition, it is known that (D) and (E) are affected by the collimator lens 42, and the beam volume is lower than (C), but the beam volume is larger than (B).

Furthermore, FIG. 5 shows the relationship between the distance L from the optical axis O of the LED chip 14 and the beam density (lm/mm ² ). As shown in FIG. 5, compared with (A) and (B), (C) is independent of the distance L from the optical axis O of the LED chip 14, and the beam density (lm/mm ² ) is increased. From this phenomenon, it is understood that by providing the second high refractive index layer 33 with a lens-like upper surface, the beam density (lm/mm ² ) of the light emitted from the outside of the LED light source device 1 increases. In addition, there are projectors (D) and (E) equipped with a collimator lens 42. Because the light beam irradiated from the LED light source device 1 can be condensed by the collimator lens 42, it is compared with (A)~(C ), it is known that the beam density (lm/mm ² ) near the optical axis O of the LED chip 14 (within the range of 3~4mm from the optical axis of the LED chip 14) is higher, if it is far away from the optical axis of the LED chip 14 O, the beam density (lm/mm ² ) is drastically reduced. That is, it is found that the light distribution angle of the LED chip 14 can be reduced. Furthermore, as shown in FIG. 5, it is known that even if the beams (D) and (E) are condensed by the collimator lens 42, the beam density (lm/mm ² ) near the optical axis O of the LED chip 14 is still relatively high. It is stable and can emit uniform intensity light without unevenness.

Furthermore, in Example 2, an LED chip 14 with a width W of 1.0 mm is provided, and the height H1 of the reflector 20 is set to 0.75 mm, and the height of the upper surface of the LED chip 14 from the apex of the second high refractive index layer 33 H2 is set to 2.45 mm, the width D of the second high refractive index layer 33 is set to 3.64 mm, and the lens curvature radius R of the second high refractive index layer 33 is set to 1.85 mm, which simulates the performance of the LED light source device 1. In addition, the second embodiment is also shown in FIG. 4, and simulation is also performed on the projector device 4 with the collimator lens 42 installed in the irradiation direction of the LED light source device 1. The simulation results are as follows.

The following Table 2 shows the second embodiment. For the configurations (F) to (J) described below, the light-receiving surface at a position 10mm away from the collimator lens 42 is the amount of light (lm) . Here, (F) is the structure of only the LED chip 14 (the reflector 20 and the translucent member 30 are not provided), and (G) is shown in FIG. 4 and only the second high refractive index is not provided in the LED light source device 1. The structure of the high-efficiency layer 33 (the translucent member 30 has only the first high-refractive-index layer 31 and the low-refractive-index layer 32), (H) is the same as the LED light source device 1 shown in FIG. 3, but also has a second high The LED light source device simulation result of the composition of the refractive index layer 33. In addition, (I) is a configuration in which a collimator lens 42 is arranged in front of the LED light source device 1, as shown in FIG. 4, and (J) is a projector device for a beam with a light distribution angle of 15° or less among the beams of (I) 4 Simulation results.

As shown in Table 2 above, the structure without the second high refractive index layer 33 (G) is almost the same amount of light beam as (F) in which only the LED chip 14 is provided. The reason is (G) by laminating the first high refractive index layer 31 in such a way that it is adjacent to the upper surface of the LED chip 14 without voids, the light generated in the LED chip 14 can be taken out of the LED chip 14, but the second embodiment Since the reflector 20 forms a small tilt angle (tilt relaxation), the light beam reflected by the reflector 20 and incident on the outside air from the low refractive index layer 32 will have an incident angle greater than the critical angle, resulting in the low refractive index layer 32 The total reflection occurs on the boundary surface with the outside air, and the light beam is not emitted to the outside of the LED light source device 1.

On the other hand, compared to (G), the beam volume of (H) is approximately doubled. The reason is that (H) is on the low-refractive index layer 32, and the second high-refractive index layer 33 whose upper surface is lenticular is formed to cover the opening 22 of the reflector 20 (when the reflector 20 is viewed from above, the upper The surface 21 has an opening at the inner side), thereby suppressing total reflection at the boundary surface between the second high refractive index layer 33 and the outside air, so that more light beams can be radiated to the outside of the LED light source device 1.

Accordingly, by laminating the first high refractive index layer 31 so as to be adjacent to the LED chip 14 without voids, the light generated by the LED chip 14 can be suppressed on the boundary surface between the LED chip 14 and the first high refractive index layer 31 The total reflection at the position can be taken out from the LED chip 14. In addition, by making the upper surface of the first high refractive index layer 31 into a lens shape, it is possible to suppress the total reflection of the boundary surface between the first high refractive index layer 31 and the low refractive index layer 32, so that the light beam can be radiated to the LED light source. The exterior of the device 1. In addition, by making the upper surface of the second high refractive index layer 33 into a lens shape, the total reflection of the boundary surface between the second high refractive index layer 33 and the outside air can be suppressed, so that more light beams can be radiated to the LED light source device. 1 outside. In addition, it is known that (I) and (J) are affected by the collimator lens 42, and the beam volume is lower than (H), but the beam volume is larger than (G).

Furthermore, FIG. 6 shows the relationship between the distance L from the optical axis O of the LED chip 14 and the beam density (lm/mm ² ). As shown in FIG. 6, compared with (F) and (G), (H) is independent of the distance L from the optical axis O of the LED chip 14, and the beam density (lm/mm ² ) is increased. From this phenomenon, it is understood that by providing the second high refractive index layer 33 with a lens-like upper surface, the beam density (lm/mm ² ) of the light emitted from the outside of the LED light source device 1 increases. In addition, there are projectors (I) and (J) equipped with a collimator lens 42. Because the light beam irradiated from the LED light source device 1 can be condensed by the collimator lens 42, compared to (F)~(H ), it is known that the beam density (lm/mm ² ) near the optical axis O of the LED chip 14 (within the range of 3~4mm from the optical axis of the LED chip 14) is higher, if it is far away from the optical axis of the LED chip 14 O, the beam density (lm/mm ² ) is drastically reduced. That is, it is found that the light distribution angle of the LED chip 14 can be reduced. Furthermore, as shown in FIG. 6, it is known that even if the beams (I) and (J) are condensed by the collimator lens 42, the beam density (lm/mm ² ) near the optical axis O of the LED chip 14 is still relatively high. It is stable and can emit uniform intensity light without unevenness.

As described above, in the LED light source device 1 of the present embodiment, the light-transmitting member 30 is laminated on the LED chip 14 in close contact with the LED chip 14 without a gap. In particular, the light-transmitting member 30 of this embodiment has a first high refractive index layer 31 having a refractive index of 90% or more with respect to the light refractive index of the LED chip 14, and is formed so as to be adjacent to the LED chip 14 without voids. . As a result, the total reflection of the boundary surface between the LED chip 14 and the first high refractive index layer 31 can be suppressed, and more light generated by the LED chip 14 can be extracted from the LED chip 14, and as a result, the LED light source device 1 can be further increased. The amount of beam emitted. In addition, the LED light source device 1 of the present embodiment has the reflector 20, and the upper surface of the translucent member 30 (the upper surface of the second high refractive index layer 33) is formed into a lens shape (curved surface). The extracted light beam can be condensed at the lens surface of the reflector 20 and the translucent member 30, and light with a small radiation angle and uniform intensity can be irradiated.

Furthermore, the translucent member 30 of this embodiment has a light refractive index The low refractive index layer 32 is lower than the first high refractive index layer 31, and the low refractive index layer 32 is laminated on the upper surface of the first high refractive index layer 31 in an adjacent manner without voids. Generally, because high refractive resin is more expensive than low refractive resin, the low refractive index layer 32 is laminated on the upper surface of the first high refractive index layer 31 made of translucent resin to reduce the high refractive index resin. The amount of usage can reduce the manufacturing cost of the LED light source device 1. In addition, in the case where the low refractive index layer 32 is layered on the upper surface of the first high refractive index layer 31, the reason is that the upper surface of the first high refractive index layer 31 is formed into a lens shape. At the boundary surface of the refractive index layer 32, the total reflection of the light beam can be effectively suppressed. As a result, compared with the case where the light-transmitting member 30 is composed of only a high-refractive-index light-transmitting resin and a lens, the light beam quantity of the LED light source device 1 is not significantly reduced.

In the LED light source device 1 of this embodiment, the second high-refractive index layer 33 is laminated on the upper surface of the low-refractive index layer 32 in a non-voided manner, and the upper surface of the second high-refractive index layer 33 is also lenticular. (Surface). Thereby, the total reflection of the boundary surface between the second high refractive index layer 33 and the outside (air) can be suppressed, and the amount of the light beam irradiated to the outside of the LED light source device 1 can be increased. Furthermore, in the LED light source device 1 of this embodiment, as shown in FIG. 3, the second high refractive index layer 33 is adjacent to the upper surface 21 of the reflector 20 without a gap, and is formed to be wider than the opening 22 of the reflector 20 Range coverage status. Accordingly, by forming the second high refractive index layer 33 adjacent to the upper surface 21 of the reflector 20 without gaps, the entire opening 22 of the reflector 20 can be covered by the second high refractive index layer 33, thereby eliminating low refraction. The part of the rate layer 32 that will contact the outside air. Thereby, it is possible to effectively prevent the total reflection at the boundary surface between the low refractive index layer 32 and the outside air from reducing the amount of light beam, and the total amount of light beam of the LED light source device 1 can be increased.

"Second Embodiment"

Next, the LED light source device 1a of the second embodiment will be described. Fig. 7 shows a cross-sectional view of the LED light source device 1a according to the second embodiment. The LED light source device 1a of the second embodiment is shown in FIG. 7, and the LED light source device 1 of the first embodiment is laminated on the upper surface of a metal metal substrate 17. Except for the following description, the rest are the same as those of the first embodiment The LED light source device 1 of the form is similarly configured and operates.

In the second embodiment, the surface of the metal substrate 17 having excellent thermal conductivity and electrical properties is a plate made of metal, for example, the surface is made of copper and aluminum with a water-cooling structure (composed of upper plate, middle plate, and lower plate). A layered structure composed of three types of copper plates), or a metal plate composed of copper and aluminum (for example, a thickness of 0.5 to 2.00 mm). Materials with low thermal conductivity, such as glass epoxy resin, have poor heat dissipation properties in the center of the light emitting area, and a particularly reduced donutization phenomenon, so it is best avoided.

An insulating layer 15 is formed on the metal substrate 17. The insulating layer 15 is a layer that electrically insulates the metal substrate 17 and the wiring layer 12, and the main component is composed of glass epoxy resin and polyimide resin.

In the second embodiment, a known insulating resin sheet with copper foil (for example, a sheet in which glass epoxy resin used as the insulating layer 15 and copper foil used as the wiring layer 12a are laminated in advance) is laminated on the metal substrate 17. The insulating layer 15 and the wiring layer 12a can be laminated on the metal substrate 17. In addition, because the thermal conductivity of glass epoxy resin is low (for example, about 1 W/mk), the thermal conductivity (for example, about 10 to 20 W/mk) can be improved by adding fillers.

Furthermore, in the second embodiment, as shown in FIG. 7, a recessed portion 24 is provided on the lower side of the reflector 20. In the recessed portion 24, the wiring layer 12 on the side of the mounting substrate 11 and the wiring layer on the side of the metal substrate 17 are combined. Between 12a, the wire 18 is used for electrical coupling. Also, in order to be able to arrange the lead 18, the solder mask is also the solder mask on the side of the mounting board 11. A gap is opened between the layer 13 and the solder resist layer 13a on the side of the metal substrate 17, and they are laminated on the wiring layers 12 and 12a, respectively.

Furthermore, in the second embodiment, the mounting substrate 11 with high heat dissipation is laminated on the metal substrate 17 with the adhesive layer 16 interposed therebetween. In order to bond the mounting substrate 11 to the adhesive layer 16 for the metal substrate 17, a high thermal conductivity adhesive is also used. The subsequent layer 16 is under the premise of high thermal conductivity, and the rest is not particularly limited. For example, CT2700R7S (Kyocera Corporation) with a thermal conductivity of 200W/mk silver paste can be used.

As described above, the LED light source device 1a of the second embodiment is different from the LED light source device 1 of the first embodiment in the structure of the substrate, but it is the same as the LED light source device 1 of the first embodiment in that it is composed of a reflector. 20 and a translucent member 30 are formed. Therefore, as in the first embodiment, it is possible to irradiate light with a large beam volume, a small radiation angle, and a uniform intensity.

"The third embodiment"

Next, the LED light source device 1b of the third embodiment will be described. Fig. 8 shows a cross-sectional view of the LED light source device 1b according to the third embodiment. The LED light source device 1b of the third embodiment, as shown in FIG. 8, has the same configuration as the LED light source device 1 of the first embodiment except that the light-transmitting member 30a is composed of only the first high refractive index layer 31. Take action.

In the LED light source device 1b of the third embodiment, the translucent member 30a is provided with only the first high refractive index layer 31. In this case, only the upper surface of the phosphor layer 311 is filled with the non-phosphor layer 312 and cured to form the translucent member 30a. Therefore, compared with the LED light source device 1 of the first embodiment, the LED light source device can be manufactured more easily and simply.

As described above, in the LED light source device 1b of the third embodiment, since the translucent member 30a is composed of only the first high refractive index layer 31, the LED light source device 1 of the first embodiment does not have the first high refractive index layer. The boundary surface between the low refractive index layer 32 and the low refractive index layer 32, and the boundary surface between the low refractive index layer 32 and the second high refractive index layer 33, in addition to the effect of the LED light source device 1 of the first embodiment, can provide more light Expose to the outside. Moreover, the LED light source device can also be manufactured easily and simply.

"Fourth Embodiment"

Next, the LED light source device 1c of the fourth embodiment will be described. Fig. 9 shows a cross-sectional view of the LED light source device 1c according to the fourth embodiment. The LED light source device 1c of the fourth embodiment has the same configuration as the LED light source device 1b of the third embodiment except for the matters described below.

That is, in the LED light source device 1c of the fourth embodiment, the light-transmitting member 30b is composed of only a single layer of the high refractive index layer 31a. The high refractive index layer 31a is, for example, a transparent resin composed of epoxy-based, silicone-based resin, or a translucent layer composed of glass, but is different from the first high-refractive index layer 31 of the first to third embodiments. , As long as the light refractive index of the LED chip 14 is above 80%. For example, when the LED chip 14 is an LED chip with a sapphire substrate, since the light refractive index n of the LED chip is 1.768, the light refractive index n of the high refractive index layer 31a becomes 1.414 or more.

Here, FIG. 10 shows a simulation result diagram of the beam volume when using translucent members with different refractive indexes. As shown in the example of FIG. 10, the beam density (lm/mm ² ) of each distance L (mm) from the optical axis O is simulated for three LED light source devices (K) to (M) as shown below. Specifically, (K) is one of the translucent members having a refractive index of 93% for the LED chip 14 and a light refractive index n of 1.65 as shown in FIG. 8 using a translucent member 30a belonging to the third embodiment. Simulation results. In addition, (L) is a simulation result of a translucent member having a refractive index of 89% for the LED chip 14 and a light refractive index n of 1.57 using the translucent member 30b belonging to the fourth embodiment. In addition, (M) is a simulation result of a translucent member having a refractive index of 81% for the LED chip 14 and a light refractive index n of 1.44 using the translucent member 30b belonging to the fourth embodiment.

As shown in Fig. 10, (L) and (M) of the translucent member 30b of the fourth embodiment are used. Compared with (K) of the translucent member with a higher refractive index, the beam quantity is lower, but the The (L) of the light-transmitting member 30b of the fourth embodiment has a beam volume integral value of 0.81 lumens, and even the beam volume integral value of (M) has reached 0.67 lumens. It is known that it has sufficient brightness and brightness for use as a projector. Directivity.

Furthermore, in the LED light source device 1c of the fourth embodiment, as shown in FIG. 9, a dam portion 23 is formed on the periphery of the upper surface 21 of the reflector 20. Here, when the translucent member 30b is formed to be adjacent to the upper surface 21 of the reflector 20 without voids, it is necessary to fill the upper surface 21 of the reflector 20 with a translucent resin which is a translucent material, but in this case There is a possibility that the light-transmitting material flows out of the reflector 20. In this embodiment, by forming the dam 23 on the upper surface 21 of the reflector 20, even when the translucent material is filled on the upper surface 21 of the reflector 20, it is possible to prevent the translucent material from flowing out to the outside. The light-transmitting member 30b is in a state where it abuts the upper surface 21 of the reflector 20 without a gap. However, as shown in FIG. 9, the light-transmitting member 30b (high refractive index layer 31a) is formed in such a manner that the space inside the reflector 20 is buried and the space formed by the dam 23 on the upper surface 21 of the reflector 20.

Next, a method of manufacturing the LED light source device 1c of the fourth embodiment will be described. In the LED light source device 1c, the LED chip 14 is first arranged on the mounting substrate 11 on which the wiring layer 12 has been drawn, and is coupled to the wiring layer 12. Also, on the wiring layer A solder resist layer 13 is formed on 12, and a reflector 20 is formed on the solder resist layer 13 in a manner surrounding the LED chip 14. In the fourth embodiment, a dam 23 is formed on the upper surface 21 of the reflector 20.

In addition, in the fourth embodiment, the light-transmitting member 30b is not formed separately into two different layers of the first high refractive index layer 31 and the low refractive index layer 32 as in the first embodiment, but is integrally molded. Therefore, in the fourth embodiment, for example, by filling the space inside the reflector 20 and the inner space of the dam 23 of the reflector 20 with a light-transmitting resin, as shown in FIG. In the opening 22 of the reflector 20, the translucent member 30b is integrally molded. In addition, the light-transmitting member 30b is removed before being integrally molded, and the molding method is not limited. For example, it can be molded by a method such as transfer molding, resin injection, and compression molding. In the fourth embodiment, the light-transmitting member 30b is also formed so that the light-transmitting member 30b is adjacent to the upper surface 21 of the reflector 20 without a gap.

As described above, in the LED light source device 1c of the fourth embodiment, since the translucent member 30b is also adjacent to the upper surface 21 of the reflector 20 without a gap, the adhesion of the translucent member 30b can be improved. In addition, because the translucent member 30b has a light refractive index of 80% or more with respect to the light refractive index of the LED chip 14, the total reflection can be suppressed by combining with the reflector 20, and more light beams can be radiated to the LED. The outside of the light source device 1c can provide an LED light source device 1c with sufficient brightness and directivity when used as a projector.

Furthermore, the translucent member 30b of the fourth embodiment can be formed using a lower refractive index material than the translucent member 30a of the third embodiment, so that a wider range of translucent properties can be obtained. The use of materials as raw materials can also reduce costs and improve design. In addition, the LED light source device 1c of the fourth embodiment is similar to the LED light source device 1b of the third embodiment, because the light-transmitting member 30b is composed of only a single The layer structure can prevent problems caused by bonding two different layers such as the first high refractive index layer 31 and the low refractive index layer 32, and the LED light source device 1c can also be easily manufactured.

Above, several embodiments are simply exemplified and explained in detail for the present disclosure. However, within the scope of the novel disclosure and advantageous effects of the present invention, this embodiment can be modified in many ways.

For example, in the above embodiment, the LED chip 14 exemplifies an LED chip equipped with a sapphire substrate, but it is not limited to this configuration. For example, gallium nitride-based (GaN, AlGaN, InGaN) LED chips and irradiated with ultraviolet light (especially UVA) LED chip. In this case, in the light-transmitting member 30, the first high refractive index layer 31 uses a refractive index of 90% or more with respect to the light refractive index of the LED chips 14. In addition, when a translucent member having a refractive index of 80% or more is used, it is preferable to appropriately set the reflector 20 and lens shape in order to obtain a large amount of light beam. In addition, since the LED chip 14 is manufactured by depositing an epitaxial layer on a sapphire SiC, GaN substrate, etc., the refractive index of the first high refractive index layer 31 used matches the refractive index of these substrate materials. For example, since the refractive index n of the GaN-based LED chip is 2.6, if the light refractive index with respect to the LED chip 14 is 90% or more, the first high refractive index layer 31 uses a resin layer with a refractive index of 2.34 or more.

Furthermore, the above-mentioned embodiment exemplifies that the first high refractive index layer 31 is composed of the phosphor layer 311 and the non-phosphor layer 312, or is composed only of the non-phosphor layer 312, but it is not limited to this configuration, such as the first high The refractive index layer 31 may also be composed of only the phosphor layer 311. However, if the first high refractive index layer 31 is composed only of the phosphor layer 311, the phosphor will be excited and re-emit in all directions, or the heat generated by the re-emission will not easily dissipate, so the first high refractive index layer 31 is preferably composed of a phosphor layer 311 and a non-fluorescent body The layer 312 is composed of, or is composed of only the non-phosphor layer 312.

In addition, in the first embodiment described above, the translucent member 30 may be formed of a translucent material that does not contain sulfur. Most light-transmitting materials with high refractive index contain sulfur. When silicone resin is used in combination, it may hinder the curing of silicone resin. Therefore, by forming the light-transmitting member 30 with a non-sulfurized light-transmitting material and having a non-sulfurized structure, this problem can be solved, and a higher-quality LED light source device 1 can be provided. In addition, OKP (Osaka Gas Chemicals) can be used as the translucent member 30 which does not contain sulfur. In addition, in order to improve the adhesion between the first high refractive index layer 31 and the low refractive index layer 32, as shown in FIG. 11, the bottom surface 313 of the first high refractive index layer 31 may be formed into a lens shape. Thereby, when the second high refractive index layer 33 is attached to the low refractive index layer 32, no air remains at the interface between the second high refractive index layer 33 and the low refractive index layer 32.

In addition, the above-mentioned first embodiment and the second embodiment exemplified the configuration of two or more laminated layers different from the low refractive index layer 32 and the high refractive index layers 31 and 33. However, when different layers are laminated accordingly, It is best to bake to the temperature (about 50°C) at which the light-transmitting material (light-transmitting resin material) is in a liquid state, or to perform curing and baking after vacuum degassing. This can suppress the generation of bubbles in the resin. In addition, as in the LED light source devices 1a and 1b of the third embodiment or the fourth embodiment, when the translucent members 30a and 30b are formed of only the same translucent material, they can also be made of the same translucent material. The composition layer is a double-layered structure. In this case too, in order to suppress the formation of bubbles in the resin, it is best to bake it to the temperature (about 50°C) at which the light-transmitting material is liquid, or to perform curing and bake after vacuum degassing.

Furthermore, in the fourth embodiment described above, when the translucent material is filled to the upper surface 21 of the reflector 20, to prevent the translucent material from flowing out of the reflector 20, it is provided on the upper surface 21 of the reflector 20. Dam section 23 (outflow prevention section), only combined It is not limited to this configuration. For example, by providing a groove or a concave portion serving as an outflow prevention portion on the upper surface 21 of the reflector 20, the groove or the concave portion can fill up to the upper surface 21 of the reflector 20 with a light-transmitting material. At this time, the translucent material can still be effectively prevented from flowing out of the reflector 20. In addition, by using a mold, the light-transmitting member 30b may be integrally molded without providing an outflow prevention portion on the upper portion of the reflector 20. In addition, the LED light source devices 1 to 1b of the first to third embodiments can also be provided with outflow prevention portions such as the dam portion 23 in the same manner.

4‧‧‧Projector device

1R, 1G, 1B‧‧‧LED light source device

41‧‧‧Two-color 稜鏡

42R, 42G, 42B‧‧‧Collimator lens

43R, 43G, 43B‧‧‧LCD light valve

44‧‧‧Projection optical system

L‧‧‧Projection light

Claims (14)

An LED light source device is provided with: LED chip; A reflector, which surrounds the LED chip; and Translucent member, which is composed of translucent material and the upper surface is formed into a lens shape; Wherein, the translucent member has a first high refractive index layer, and the first high refractive index layer is adjacent to the layer of the LED chip without voids and has a refractive index of 90% relative to the light refractive index of the LED chip. The above light refractive index layer. The LED light source device according to claim 1, wherein the translucent member is further provided with: a low refractive index layer having a light refractive index lower than that of the first high refractive index layer; The low refractive index layer is configured to be laminated on the upper surface of the first high refractive index layer without voids. The LED light source device of claim 2, wherein the translucent member is further provided with: a second high refractive index layer having a higher light refractive index than the low refractive index layer; The second high refractive index layer is configured to be laminated on the upper surface of the low refractive index layer without voids, and the upper surface is formed into a lens shape. The LED light source device of claim 3, wherein the first high refractive index layer is composed of light-transmitting resin or glass; The low refractive index layer is made of light-transmitting resin; The second high refractive index layer is made of translucent resin or glass. The LED light source device according to claim 3 or 4, wherein the upper surface and the bottom surface of the second high refractive index layer are formed in a lens shape. The LED light source device according to any one of claims 1 to 4, wherein the upper surface of the first high refractive index layer is formed into a lens shape. The LED light source device according to any one of claims 1 to 4, wherein the first high refractive index layer is provided with a phosphor layer containing a phosphor. The LED light source device according to any one of claims 1 to 4, wherein the light-transmitting member does not contain sulfur. An LED light source device is provided with: LED chip; A reflector, which surrounds the LED chip; and Translucent member, which is composed of translucent material and the upper surface is formed into a lens shape; Wherein, the translucent member is adjacent to the LED chip without a gap, and also adjacent to the upper surface of the reflector without a gap. The LED light source device according to claim 9, wherein the translucent member has a light refractive index of 80% or more with respect to the light refractive index of the LED chip. The LED light source device of claim 9 or 10, wherein the light-transmitting member is integrally formed. The LED light source device according to claim 11, further comprising: an outflow prevention portion for preventing the above-mentioned when the above-mentioned translucent material is filled in the reflector to integrally form the above-mentioned translucent member The light-transmitting material flows out for external use. The LED light source device of claim 9 or 10, wherein the light-transmitting member does not contain sulfur. A projector that has: LED light source device for red light; A transmissive liquid crystal panel for red light, which modulates the light emitted from the above-mentioned LED light source device for red light; LED light source device for green light; A transmissive liquid crystal panel for green light, which modulates the light emitted from the above-mentioned LED light source device for green light; LED light source device for blue light; A transmissive liquid crystal panel for red light, which modulates the light emitted from the above-mentioned LED light source device for red light; Two-color 鏡, which combines red light, green light and blue light; and Projection optical system, which projects the synthetic light from the two-color beam; Wherein, the LED light source device for red light, the LED light source device for green light, and the LED light source device for blue light are constituted by the LED light source device of any one of claims 1 to 4.

Images