TW202026303A - Organometallic compound and organic light-emitting device including the same - Google Patents

Organometallic compound and organic light-emitting device including the same Download PDF

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TW202026303A
TW202026303A TW108147808A TW108147808A TW202026303A TW 202026303 A TW202026303 A TW 202026303A TW 108147808 A TW108147808 A TW 108147808A TW 108147808 A TW108147808 A TW 108147808A TW 202026303 A TW202026303 A TW 202026303A
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崔鐘元
金昭延
李智娟
曺勇碩
迪米特 克拉夫庫克
郭允鉉
具賢
沈明善
李晟熏
崔炳基
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南韓商三星電子股份有限公司
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Abstract

An organometallic compound represented by Formula 1 and an organic light-emitting device including the same, and Y2, ring A2, R1 to R8, R13 to R20, and d2 in Formula 1 may be each independently the same as described in the specification.

Description

有機金屬化合物和包括其的有機發光器件Organometallic compound and organic light emitting device including the same

本揭露內容涉及有機金屬化合物和包括其的有機發光器件。 [對相關申請的交叉引用]The present disclosure relates to organometallic compounds and organic light-emitting devices including them. [Cross references to related applications]

本申請要求在韓國知識產權局於2018年12月28日提交的韓國專利申請No. 10-2018-0173083和於2019年10月30日提交的韓國專利申請No. 10-2019-0136792的權益以及由其產生的所有權益。將其內容全部引入本文中作為參考。This application requires the rights of Korean Patent Application No. 10-2018-0173083 filed on December 28, 2018 and Korean Patent Application No. 10-2019-0136792 filed on October 30, 2019 at the Korean Intellectual Property Office and All rights and interests arising from it. All its contents are incorporated into this article as a reference.

有機發光器件為在視角、響應時間、亮度、驅動電壓和響應速度方面具有改善的特性並且產生全色圖像的自發射器件。Organic light-emitting devices are self-emissive devices that have improved characteristics in terms of viewing angle, response time, brightness, driving voltage, and response speed, and generate full-color images.

在實例中,有機發光器件包括陽極、陰極以及在陽極和陰極之間的有機層,其中有機層包括發射層。電洞傳輸區域可在陽極和發射層之間,且電子傳輸區域可在發射層和陰極之間。從陽極提供的電洞可通過電洞傳輸區域朝著發射層移動,且從陰極提供的電子可通過電子傳輸區域朝著發射層移動。電洞和電子在發射層中複合以產生激子。這些激子從激發態躍遷到基態,由此產生光。In an example, the organic light emitting device includes an anode, a cathode, and an organic layer between the anode and the cathode, wherein the organic layer includes an emission layer. The hole transport area may be between the anode and the emission layer, and the electron transport area may be between the emission layer and the cathode. The holes provided from the anode may move toward the emission layer through the hole transport area, and the electrons provided from the cathode may move toward the emission layer through the electron transport area. Holes and electrons recombine in the emission layer to generate excitons. These excitons transition from the excited state to the ground state, thereby generating light.

提供新的有機金屬化合物和包括其的有機發光器件。Provide new organometallic compounds and organic light-emitting devices including them.

另外的方面將部分地在隨後的描述中闡明,且部分地將由所述描述明晰,或者可通過所提供的實施方式的實踐而獲悉。Other aspects will be partly clarified in the following description, and partly will be clarified by the description, or may be learned through the practice of the provided embodiments.

根據實施方式的一個方面,提供由式1表示的有機金屬化合物: [式1]

Figure 02_image001
在式1中, Y2 可為C, 環A2 可為C5 -C30 碳環基團或C1 -C30 雜環基團, R1 -R8 、R13 -R17 和R20 可各自獨立地為氫、氘、-F、-Cl、-Br、-I、-SF5 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、經取代或未經取代的C1 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團、經取代或未經取代的單價非芳族稠合雜多環基團、-N(Q1 )(Q2 )、-Si(Q3 )(Q4 )(Q5 )、-Ge(Q3 )(Q4 )(Q5 )、-B(Q6 )(Q7 )、-P(=O)(Q8 )(Q9 )、或-P(Q8 )(Q9 ), 條件是i) R1 -R8 的至少一個可包括至少一個氟基團(-F),且ii) R20 可既不包括氟基團(-F)也不包括氰基, d2可為0-10的整數,且當d2為2或更大時,兩個或更多個R20 可彼此相同或不同, R18 和R19 可各自獨立地為經取代或未經取代的C2 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團、或者經取代或未經取代的單價非芳族稠合雜多環基團, R1 -R8 的兩個或更多個可任選地連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團, 數量為d2的R20 的兩個或更多個可任選地連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團, R13 -R19 的兩個或更多個可任選地連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團, R1a 可與關於R2 所說明的相同, 經取代的C1 -C60 烷基、經取代的C2 -C60 烷基、經取代的C2 -C60 烯基、經取代的C2 -C60 炔基、經取代的C1 -C60 烷氧基、經取代的C3 -C10 環烷基、經取代的C2 -C10 雜環烷基、經取代的C3 -C10 環烯基、經取代的C2 -C10 雜環烯基、經取代的C6 -C60 芳基、經取代的C6 -C60 芳氧基、經取代的C6 -C60 芳硫基、經取代的C1 -C60 雜芳基、經取代的單價非芳族稠合多環基團和取代的單價非芳族稠合雜多環基團的取代基為: 氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基或C1 -C60 烷氧基或其任意組合; C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基或C1 -C60 烷氧基各自經以下取代:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、-N(Q11 )(Q12 )、-Si(Q13 )(Q14 )(Q15 )、-Ge(Q13 )(Q14 )(Q15 )、-B(Q16 )(Q17 )、-P(=O)(Q18 )(Q19 )、-P(Q18 )(Q19 )、或其任意組合; C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團或單價非芳族稠合雜多環基團各自未經取代或經以下取代:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基、C1 -C60 烷氧基、C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、-N(Q21 )(Q22 )、-Si(Q23 )(Q24 )(Q25 )、-Ge(Q23 )(Q24 )(Q25 )、-B(Q26 )(Q27 )、-P(=O)(Q28 )(Q29 )、-P(Q28 )(Q29 )或其任意組合; -N(Q31 )(Q32 )、-Si(Q33 )(Q34 )(Q35 )、-Ge(Q33 )(Q34 )(Q35 )、-B(Q36 )(Q37 )、-P(=O)(Q38 )(Q39 )或-P(Q38 )(Q39 )、或其任意組合;或 其任意組合, 其中Q1 -Q9 、Q11 -Q19 、Q21 -Q29 和Q31 -Q39 可各自獨立地為:氫;氘;-F;-Cl;-Br;-I;羥基;氰基;硝基;脒基;肼基;腙基;羧酸基團或其鹽;磺酸基團或其鹽;磷酸基團或其鹽;未經取代的或者被氘、C1 -C60 烷基、C6 -C60 芳基或其任意組合取代的C1 -C60 烷基;C2 -C60 烯基;C2 -C60 炔基;C1 -C60 烷氧基;C3 -C10 環烷基;C2 -C10 雜環烷基;C3 -C10 環烯基;C2 -C10 雜環烯基;未經取代的或者被氘、C1 -C60 烷基、C6 -C60 芳基、或其任意組合取代的C6 -C60 芳基;C6 -C60 芳氧基;C6 -C60 芳硫基;C1 -C60 雜芳基;單價非芳族稠合多環基團;或單價非芳族稠合雜多環基團。According to an aspect of the embodiment, there is provided an organometallic compound represented by Formula 1: [Formula 1]
Figure 02_image001
In formula 1, Y 2 can be C, ring A 2 can be a C 5 -C 30 carbocyclic group or a C 1 -C 30 heterocyclic group, R 1 -R 8 , R 13 -R 17 and R 20 Can each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, -SF 5 , hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or Salt, sulfonic acid group or its salt, phosphoric acid group or its salt, substituted or unsubstituted C 1 -C 60 alkyl, substituted or unsubstituted C 2 -C 60 alkenyl, substituted or Unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted C 2 -C 10 heterocycloalkenyl, substituted or unsubstituted C 6 -C 60 aryl group, substituted or unsubstituted C 6 -C 60 aryloxy group, substituted or unsubstituted C 6 -C 60 arylthio group, substituted or unsubstituted C 1 -C 60 heteroaryl, substituted or unsubstituted monovalent non-aromatic fused polycyclic group, substituted or unsubstituted monovalent non-aromatic fused heteropolycyclic group, -N(Q 1 ) (Q 2 ), -Si(Q 3 )(Q 4 )(Q 5 ), -Ge(Q 3 )(Q 4 )(Q 5 ), -B(Q 6 )(Q 7 ), -P(= O)(Q 8 )(Q 9 ), or -P(Q 8 )(Q 9 ), provided that i) at least one of R 1 -R 8 may include at least one fluorine group (-F), and ii) R 20 may include neither a fluoro group (-F) nor a cyano group, d2 may be an integer of 0-10, and when d2 is 2 or greater, two or more R 20 may be the same as each other or Different, R 18 and R 19 may each independently be substituted or unsubstituted C 2 -C 60 alkyl, substituted or unsubstituted C 2 -C 60 alkenyl, substituted or unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted C 2 -C 10 heterocycloalkenyl, substituted or unsubstituted C 6 -C 60 aryl, substituted or unsubstituted C 6 -C 60 aryloxy, substituted or unsubstituted C 6 -C 60 arylthio, substituted or unsubstituted C 1 -C 60 heteroaryl Group, substituted or unsubstituted monovalent non-aromatic fused polycyclic group, or substituted or unsubstituted monovalent non-aromatic fused heteropolycyclic group, R 1 8 -R two or more can be linked to form an optionally unsubstituted or substituted with at least one R 1a is C 5 -C 30 carbocyclic radical, unsubstituted or substituted with at least one R 1a A substituted C 1 -C 30 heterocyclic group, two or more of R 20 in number d2 may be optionally joined to form a C 5 -C 30 carbon that is unsubstituted or substituted with at least one R 1a A cyclic group, or a C 1 -C 30 heterocyclic group that is unsubstituted or substituted with at least one R 1a , two or more of R 13 -R 19 may be optionally connected to form an unsubstituted at least one R 1a substituent or the C 5 -C 30 carbocyclic group, or an unsubstituted or substituted by at least one R 1a is C 1 -C 30 heterocyclic group, R 1a may be described with respect to R 2 The same, substituted C 1 -C 60 alkyl, substituted C 2 -C 60 alkyl, substituted C 2 -C 60 alkenyl, substituted C 2 -C 60 alkynyl, substituted C 1 -C 60 alkoxy, substituted C 3 -C 10 cycloalkyl, substituted C 2 -C 10 heterocycloalkyl, substituted C 3 -C 10 cycloalkenyl, substituted C 2- C 10 heterocycloalkenyl, substituted C 6 -C 60 aryl, substituted C 6 -C 60 aryloxy, substituted C 6 -C 60 arylthio, substituted C 1- The substituents of C 60 heteroaryl, substituted monovalent non-aromatic fused polycyclic group and substituted monovalent non-aromatic fused heteropolycyclic group are: deuterium, -F, -Cl, -Br,- I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazino, hydrazone, carboxylic acid Group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl or C 1 -C 60 alkane Oxy or any combination thereof; C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, or C 1 -C 60 alkoxy are each substituted by deuterium, -F,- Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazino, Hydrazone group, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 Cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 1 -C 60 heteroaryl, monovalent Non-aromatic fused polycyclic group, monovalent non-aromatic fused heteropoly Ring group, -N(Q 11 )(Q 12 ), -Si(Q 13 )(Q 14 )(Q 15 ), -Ge(Q 13 )(Q 14 )(Q 15 ), -B(Q 16 )(Q 17 ), -P(=O)(Q 18 )(Q 19 ), -P(Q 18 )(Q 19 ), or any combination thereof; C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio , C 1 -C 60 heteroaryl, monovalent non-aromatic fused polycyclic group or monovalent non-aromatic fused heteropolycyclic group are each unsubstituted or substituted by the following: deuterium, -F, -Cl,- Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazino, hydrazone, Carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 1- C 60 alkoxy, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl Group, C 6 -C 60 aryloxy group, C 6 -C 60 arylthio group, C 1 -C 60 heteroaryl group, monovalent non-aromatic fused polycyclic group, monovalent non-aromatic fused heteropolycyclic group Group, -N(Q 21 )(Q 22 ), -Si(Q 23 )(Q 24 )(Q 25 ), -Ge(Q 23 )(Q 24 )(Q 25 ), -B(Q 26 )( Q 27 ), -P(=O)(Q 28 )(Q 29 ), -P(Q 28 )(Q 29 ) or any combination thereof; -N(Q 31 )(Q 32 ), -Si(Q 33 )(Q 34 )(Q 35 ), -Ge(Q 33 )(Q 34 )(Q 35 ), -B(Q 36 )(Q 37 ), -P(=O)(Q 38 )(Q 39 ) Or -P(Q 38 )(Q 39 ), or any combination thereof; or any combination thereof, wherein Q 1 -Q 9 , Q 11 -Q 19 , Q 21 -Q 29 and Q 31 -Q 39 may be independently Is: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; amidino; hydrazine; hydrazone; carboxylic acid group or its salt; sulfonic acid group or its salt ; a phosphoric acid group or a salt thereof; unsubstituted or substituted by deuterium, C 1 -C 60 alkyl, C 6 -C 60 aryl group, or any combination of the substituted C 1 -C 60 alkyl; C 2 - C 60 alkenyl; C 2 -C 60 alkynyl; C 1 -C 60 alkoxy; C 3 -C 10 cycloalkyl; C 2 -C 10 heterocycloalkyl; C 3 -C 10 cycloalkenyl; alkenyl C 2 -C 10 heterocyclyl group; unsubstituted or substituted by deuterium, C 1 -C 60 alkyl, C 6 -C 60 aryl group, or any combination thereof C 6 -C 60 substituted aryl group; C 6 -C 60 aryloxy; C 6 -C 60 arylthio; C 1 -C 60 heteroaryl; monovalent non-aromatic fused polycyclic group; or monovalent non-aromatic fused heteropolycyclic group.

另一方面提供有機發光器件,其包括:第一電極;第二電極;以及設置在所述第一電極和所述第二電極之間並且包括發射層的有機層,其中所述有機層包括至少一種由式1表示的有機金屬化合物。Another aspect provides an organic light emitting device including: a first electrode; a second electrode; and an organic layer provided between the first electrode and the second electrode and including an emission layer, wherein the organic layer includes at least An organometallic compound represented by Formula 1.

所述有機金屬化合物可包括在所述有機層的所述發射層中並且可起到摻雜劑的作用。The organometallic compound may be included in the emission layer of the organic layer and may function as a dopant.

現在將對實施方式詳細地進行介紹,其實例說明於附圖中,其中相同的附圖標記始終是指相同的元件。在這點上,本實施方式可具有不同的形式並且不應被解釋為限於本文中闡明的描述。因此,下面僅通過參考附圖描述實施方式以說明本描述的方面。如本文中使用的,術語“和/或”包括相關列舉項目的一個或多個的任何和全部組合。表述例如“的至少一個(種)”當在要素列表之前或之後時,修飾整個要素列表且不修飾所述列表的單獨要素。The embodiments will now be described in detail, examples of which are illustrated in the drawings, in which the same reference numerals always refer to the same elements. In this regard, the present embodiment may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by referring to the drawings to illustrate aspects of this description. As used herein, the term "and/or" includes any and all combinations of one or more of the related listed items. Expressions such as "at least one (species) of" when preceding or following a list of elements modify the entire list of elements and do not modify individual elements of the list.

將理解,當一個元件被稱為“在”另外的元件“上”時,其可直接在所述另外的元件上或者在其間可存在中間元件。相反,當一個元件被稱為“直接在”另外的元件“上”時,則不存在中間元件。It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

將理解,儘管術語“第一”、“第二”、“第三”等可在本文中用於描述各種元件、組分、區域、層和/或部分,但這些元件、組分、區域、層和/或部分不應受這些術語限制。這些術語僅用於將一個元件、組分、區域、層或部分區別於另外的元件、組分、區域、層或部分。因此,在不背離本文中的教導的情況下,下面討論的第一元件、組分、區域、層或部分可稱為第二元件、組分、區域、層或部分。It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, Layers and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, without departing from the teachings herein, a first element, component, region, layer or section discussed below may be referred to as a second element, component, region, layer or section.

本文中使用的術語僅為了描述具體實施方式的目的並且不意圖為限制性的。如本文中使用的,“一個”、“一種”、“所述(該)”和“至少一個(種)”不表示數量的限制,並且意圖覆蓋單數和複數兩者,除非上下文另外指明。例如,“元件”具有與“至少一個元件”相同的含義,除非上下文另外指明。The terminology used herein is only for the purpose of describing specific embodiments and is not intended to be limiting. As used herein, "a", "an", "said (the)" and "at least one (kind)" do not denote quantitative limitations, and are intended to cover both singular and plural numbers, unless the context dictates otherwise. For example, "element" has the same meaning as "at least one element" unless the context dictates otherwise.

“或”意味著“和/或”。如本文中使用的,術語“和/或”包括相關列舉項目的一個或多個的任何和全部組合。將進一步理解,術語“包含”或“包括”當用在本說明書中時,表明存在所陳述的特徵、區域、整體、步驟、操作、元件和/或組分,但不排除存在或增加一種或多種另外的特徵、區域、整體、步驟、操作、元件、組分和/或其集合。"Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the related listed items. It will be further understood that the term "comprising" or "including" when used in this specification indicates the presence of the stated features, regions, wholes, steps, operations, elements and/or components, but does not exclude the presence or addition of one or Various additional features, regions, wholes, steps, operations, elements, components, and/or collections thereof.

此外,在本文中可使用相對術語如“下部”或“底部”以及“上部”或“頂部”來描述如圖中所示的一個元件與另外的元件的關係。將理解,除圖中所描繪的方位之外,相對術語還意圖包括器件的不同方位。例如,如果將圖之一中的器件翻轉,被描述為“在”另外的元件的“下部”側上的元件則將被定向在所述另外的元件的“上部”側上。因此,取決於圖的具體方位,示例性術語“下部”可包括“下部”和“上部”兩種方位。類似地,如果將圖之一中的器件翻轉,被描述為“在”另外的元件“下面”或“之下”的元件則將被定向“在”所述另外的元件“上方”。因此,示例性術語“在……下面”或“在……之下”可包括在……上方和在……下面兩種方位。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship between one element and another element as shown in the figure. It will be understood that in addition to the orientation depicted in the figures, relative terms are also intended to include different orientations of the device. For example, if the device in one of the figures is turned over, the elements described as being "on" the "lower" side of another element will then be oriented on the "upper" side of the other element. Therefore, depending on the specific orientation of the figure, the exemplary term "lower" may include both "lower" and "upper" orientations. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" another element will be oriented "above" the other element. Therefore, the exemplary terms "below" or "below" can include both orientations above and below.

如本文中使用的“約”或“大約”包括所陳述的值且意味著在如由本領域普通技術人員考慮到所討論的測量和與具體量的測量有關的誤差(即,測量系統的限制)而確定的對於具體值的可接受的偏差範圍內。例如,“約”可意味著相對於所陳述的值的偏差在一種或多種標准偏差範圍內,或者在±10%或5%的範圍內。As used herein, "about" or "approximately" includes the stated value and means that the measurement and the error associated with the measurement of the specific quantity (ie, the limitation of the measurement system) as discussed by those of ordinary skill in the art And determine the acceptable deviation range for the specific value. For example, "about" can mean that the deviation from the stated value is within one or more standard deviations, or within ±10% or 5%.

除非另外定義,在本文中所使用的所有術語(包括技術和科學術語)的含義與本揭露內容所屬領域的普通技術人員通常理解的相同。將進一步理解,術語,例如在常用字典中定義的那些,應被解釋為其含義與它們在相關領域的背景和本揭露內容中的含義一致,並且將不以理想化或過於形式的意義進行解釋,除非在本文中清楚地如此定義。Unless otherwise defined, the meanings of all terms (including technical and scientific terms) used herein are the same as those commonly understood by those of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as their meaning consistent with their background in the relevant field and the meaning in this disclosure, and will not be interpreted in an idealized or overly formal meaning , Unless clearly defined as such in this article.

在本文中參照作為理想化實施方式的示意圖的橫截面圖描述示例性實施方式。這樣,將預計到作為例如製造技術和/或公差的結果的與圖的形狀的偏差。因此,本文中描述的實施方式不應解釋為限於如本文中所示的區域的具體形狀,而是包括由例如製造所導致的形狀上的偏差。例如,圖示或描述為平坦的區域可典型地具有粗糙的和/或非線性的特徵。此外,所圖示的尖銳的角可為圓形的。因此,圖中所示的區域在本質上是示意性的,並且它們的形狀不意圖圖示區域的精確形狀,並且不意圖限制本申請專利範圍的範圍。Exemplary embodiments are described herein with reference to cross-sectional views as schematic diagrams of idealized embodiments. In this way, deviations from the shape of the figure are expected as a result of, for example, manufacturing technology and/or tolerances. Therefore, the embodiments described herein should not be construed as being limited to the specific shape of the region as shown herein, but include deviations in shape caused by, for example, manufacturing. For example, regions illustrated or described as flat may typically have rough and/or non-linear characteristics. In addition, the illustrated sharp corners may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions, and are not intended to limit the scope of the patent scope of this application.

根據實施方式的有機金屬化合物由下式1表示: [式1]

Figure 02_image001
式1中的Y2 可為C。 式1中的環A2 可為C5 -C30 碳環基團或C1 -C30 雜環基團。 例如,式1中的環A2 可為i)第一環,ii)第二環,iii)其中兩個或更多個第一環彼此稠合的稠環基團,iv)其中兩個或更多個第二環彼此稠合的稠環基團,或v)其中至少一個第一環與至少一個第二環稠合的稠環基團, 所述第一環可為環戊烷基團、環戊二烯基團、呋喃基團、噻吩基團、吡咯基團、噻咯基團、茚基團、苯並呋喃基團、苯並噻吩基團、吲哚基團、苯並噻咯基團、噁唑基團噁、異噁唑基團、噁二唑基團、異噁二唑基團、噁三唑基團、異噁三唑基團、噻唑基團、異噻唑基團、噻二唑基團、異噻二唑基團、噻三唑基團、異噻三唑基團、吡唑基團、咪唑基團、三唑基團、四唑基團、氮雜噻咯基團、二氮雜噻咯基團、或三氮雜噻咯基團, 所述第二環可為金剛烷基團、降冰片烯基團、二環[1.1.1]戊烷基團、二環[2.1.1]己烷基團、二環[2.2.1]庚烷基團(降莰烷基團)、二環[2.2.2]辛烷基團、環己烷基團、環己烯基團、苯基團、吡啶基團、嘧啶基團、吡嗪基團、噠嗪基團、或三嗪基團。The organometallic compound according to the embodiment is represented by the following Formula 1: [Formula 1]
Figure 02_image001
Y 2 in Formula 1 may be C. Ring A 2 in Formula 1 may be a C 5 -C 30 carbocyclic group or a C 1 -C 30 heterocyclic group. For example, ring A 2 in Formula 1 may be i) the first ring, ii) the second ring, iii) a fused ring group in which two or more first rings are fused to each other, iv) two or More fused ring groups in which second rings are fused to each other, or v) fused ring groups in which at least one first ring is fused to at least one second ring, and the first ring may be a cyclopentyl group , Cyclopentadiene group, furan group, thiophene group, pyrrole group, silole group, indene group, benzofuran group, benzothiophene group, indole group, benzosilole Groups, oxazole groups, oxazole, isoxazole groups, oxadiazole groups, isoxadiazole groups, oxtriazole groups, isoxtriazole groups, thiazole groups, isothiazole groups, Thiadiazole group, isothiadiazole group, thiatriazole group, isothiatriazole group, pyrazole group, imidazole group, triazole group, tetrazole group, azathirolyl group Group, diazasilole group, or triazasilole group, the second ring may be an adamantyl group, a norbornene group, a bicyclo[1.1.1] pentane group, a Cyclo[2.1.1]hexane group, bicyclo[2.2.1]heptan group (norbornane group), bicyclo[2.2.2]octyl group, cyclohexane group, cyclohexane Alkenyl group, phenyl group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, or triazine group.

在一種或多種實施方式中,式1中的環A2 可為環戊烷基團、環己烷基團、環己烯基團、苯基團、萘基團、蒽基團、菲基團、苯並[9,10]菲基團、芘基團、

Figure 02_image007
基團、1,2,3,4-四氫萘基團、噻吩基團、呋喃基團、吡咯基團、環戊二烯基團、噻咯基團、硼雜環戊二烯(borole)基團、磷雜環戊二烯(phosphole)基團、硒吩基團、鍺雜環戊二烯(germole)基團、苯並噻吩基團、苯並呋喃基團、吲哚基團、茚基團、苯並噻咯基團、苯並硼雜環戊二烯基團、苯並磷雜環戊二烯基團、苯並硒吩基團、苯並鍺雜環戊二烯基團、二苯並噻吩基團、二苯並呋喃基團、哢唑基團、芴基團、二苯並噻咯基團、二苯並硼雜環戊二烯基團、二苯並磷雜環戊二烯基團、二苯並硒吩基團、二苯並鍺雜環戊二烯基團、二苯並噻吩5-氧化物基團、9H-芴-9-酮基團、二苯並噻吩5,5-二氧化物基團、氮雜苯並噻吩基團、氮雜苯並呋喃基團、氮雜吲哚基團、氮雜茚基團、氮雜苯並噻咯基團、氮雜苯並硼雜環戊二烯基團、氮雜苯並磷雜環戊二烯基團、氮雜苯並硒吩基團、氮雜苯並鍺雜環戊二烯基團、氮雜二苯並噻吩基團、氮雜二苯並呋喃基團、氮雜哢唑基團、氮雜芴基團、氮雜二苯並噻咯基團、氮雜二苯並硼雜環戊二烯基團、氮雜二苯並磷雜環戊二烯基團、氮雜二苯並硒吩基團、氮雜二苯並鍺雜環戊二烯基團、氮雜二苯並噻吩5-氧化物基團、氮雜-9H-芴-9-酮基團、氮雜二苯並噻吩5,5-二氧化物基團、吡啶基團、嘧啶基團、吡嗪基團、噠嗪基團、三嗪基團、喹啉基團、異喹啉基團、喹喔啉基團、喹唑啉基團、菲咯啉基團、吡唑基團、咪唑基團、三唑基團、噁唑基團、異噁唑基團、噻唑基團、異噻唑基團、噁二唑基團、噻二唑基團、苯並吡唑基團、苯並咪唑基團、苯並噁唑基團、苯並噻唑基團、苯並噁二唑基團、苯並噻二唑基團、5,6,7,8-四氫異喹啉基團、5,6,7,8-四氫喹啉基團、金剛烷基團、降莰烷基團、或降冰片烯基團。In one or more embodiments, the ring A 2 in Formula 1 may be a cyclopentane group, a cyclohexane group, a cyclohexene group, a phenyl group, a naphthalene group, an anthracene group, a phenanthrene group , Benzo[9,10]phenanthrene group, pyrene group,
Figure 02_image007
Group, 1,2,3,4-tetrahydronaphthalene group, thiophene group, furan group, pyrrole group, cyclopentadiene group, silole group, borole Group, phosphole group, selenophene group, germanium heterolepene (germole) group, benzothiophene group, benzofuran group, indole group, indene Group, benzosilole group, benzoborole group, benzophosphoryl group, benzoselenophene group, benzogermantocyclopentadien group, Dibenzothiophene group, dibenzofuran group, azole group, fluorene group, dibenzosilole group, dibenzoborole group, dibenzophosphoryl group Diene group, dibenzoselenophene group, dibenzogermantocyclopentadiene group, dibenzothiophene 5-oxide group, 9H-fluorene-9-one group, dibenzothiophene 5,5-dioxide group, azabenzothiophene group, azabenzofuran group, azaindole group, azaindene group, azabenzosilole group, aza Benzoborole group, azabenzophosphorene group, azabenzoselenophene group, azabenzogermantocyclopentadiene group, azadiphenyl Azathiophene group, azadibenzofuran group, azapyrazole group, azafluorene group, azadibenzosilole group, azadibenzoborole group , Azadibenzophosphoryl group, azadibenzoselenophene group, azadibenzogermantocyclopentadiene group, azadibenzothiophene 5-oxide group Group, aza-9H-fluorene-9-one group, azadibenzothiophene 5,5-dioxide group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, three Azinyl group, quinoline group, isoquinoline group, quinoxaline group, quinazoline group, phenanthroline group, pyrazole group, imidazole group, triazole group, oxazoline group Group, isoxazole group, thiazole group, isothiazole group, oxadiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzene Thiazole group, benzoxadiazole group, benzothiadiazole group, 5,6,7,8-tetrahydroisoquinoline group, 5,6,7,8-tetrahydroquinolinyl group Group, adamantyl group, norbornene group, or norbornene group.

在一種或多種實施方式中,環A2 可為苯基團、萘基團、1,2,3,4-四氫萘基團、噻吩基團、呋喃基團、吡咯基團、環戊二烯基團、噻咯基團、苯並噻吩基團、苯並呋喃基團、吲哚基團、茚基團、苯並噻咯基團、二苯並噻吩基團、二苯並呋喃基團、哢唑基團、芴基團、或二苯並噻咯基團。In one or more embodiments, ring A 2 can be a phenyl group, a naphthalene group, a 1,2,3,4-tetrahydronaphthalene group, a thiophene group, a furan group, a pyrrole group, a cyclopentadiene group Alkenyl group, silole group, benzothiophene group, benzofuran group, indole group, indene group, benzosilole group, dibenzothiophene group, dibenzofuran group , Azole group, fluorene group, or dibenzosilole group.

式1中的R1 -R8 、R13 -R17 和R20 可各自獨立地為氫、氘、-F、-Cl、-Br、-I、-SF5 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、經取代或未經取代的C1 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團、經取代或未經取代的單價非芳族稠合雜多環基團、-N(Q1 )(Q2 )、-Si(Q3 )(Q4 )(Q5 )、-Ge(Q3 )(Q4 )(Q5 )、-B(Q6 )(Q7 )、-P(=O)(Q8 )(Q9 )、或-P(Q8 )(Q9 )。Q1 -Q9 各自與本文中描述的相同。這裡,R20 可既不包括氟基團(-F)也不包括氰基。在一種或多種實施方式中,R20 可為既不包括氟基團(-F)也不包括氰基的基團。R 1 -R 8 , R 13 -R 17 and R 20 in formula 1 may each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, -SF 5 , hydroxyl, cyano, nitro , Amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, substituted or unsubstituted C 1 -C 60 alkyl, Substituted or unsubstituted C 2 -C 60 alkenyl, substituted or unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted Substituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted Substituted C 2 -C 10 heterocycloalkenyl, substituted or unsubstituted C 6 -C 60 aryl, substituted or unsubstituted C 6 -C 60 aryloxy, substituted or unsubstituted C 6 -C 60 arylthio group, substituted or unsubstituted C 1 -C 60 heteroaryl group, substituted or unsubstituted monovalent non-aromatic fused polycyclic group, substituted or unsubstituted Monovalent non-aromatic fused heteropolycyclic group, -N(Q 1 )(Q 2 ), -Si(Q 3 )(Q 4 )(Q 5 ), -Ge(Q 3 )(Q 4 )(Q 5 ), -B(Q 6 )(Q 7 ), -P(=O)(Q 8 )(Q 9 ), or -P(Q 8 )(Q 9 ). Q 1 -Q 9 are each the same as described in this article. Here, R 20 may include neither the fluorine group (-F) nor the cyano group. In one or more embodiments, R 20 may be a group that includes neither a fluorine group (-F) nor a cyano group.

例如,式1中的R1 -R8 、R13 -R17 和R20 可各自獨立地為: 氫、氘、-F、-Cl、-Br、-I、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、-SF5 、C1 -C20 烷基、或C1 -C20 烷氧基; 各自被如下取代的C1 -C20 烷基或C1 -C20 烷氧基:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C20 烷基、含氘的C1 -C20 烷基、氟化C1 -C20 烷基、環戊基、環己基、環庚基、環辛基、金剛烷基、降冰片烯基、環戊烯基、環己烯基、環庚烯基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基(降莰烷基)、二環[2.2.2]辛基、(C1 -C20 烷基)環戊基、(C1 -C20 烷基)環己基、(C1 -C20 烷基)環庚基、(C1 -C20 烷基)環辛基、(C1 -C20 烷基)金剛烷基、(C1 -C20 烷基)降冰片烯基、(C1 -C20 烷基)環戊烯基、(C1 -C20 烷基)環己烯基、(C1 -C20 烷基)環庚烯基、(C1 -C20 烷基)二環[1.1.1]戊基、(C1 -C20 烷基)二環[2.1.1]己基、(C1 -C20 烷基)二環[2.2.1]庚基、(C1 -C20 烷基)二環[2.2.2]辛基、矽雜環戊烷基(silolanyl group)、苯基、(C1 -C20 烷基)苯基、聯苯基、三聯苯基、萘基、1,2,3,4-四氫萘基、吡啶基、嘧啶基、或其任意組合; 各自未被取代或被如下取代的環戊基、環己基、環庚基、環辛基、金剛烷基、降冰片烯基、環戊烯基、環己烯基、環庚烯基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基、二環[2.2.2]辛基、矽雜環戊烷基、苯基、(C1 -C20 烷基)苯基、聯苯基、三聯苯基、萘基、1,2,3,4-四氫萘基、芴基、菲基、蒽基、熒蒽基、苯並[9,10]菲基、芘基、

Figure 02_image007
基、吡咯基、噻吩基、呋喃基、咪唑基、吡唑基、噻唑基、異噻唑基、噁唑基、異噁唑基、吡啶基、吡嗪基、嘧啶基、噠嗪基、異吲哚基、吲哚基、吲唑基、嘌呤基、喹啉基、異喹啉基、苯並喹啉基、喹喔啉基、喹唑啉基、噌啉基、哢唑基、菲咯啉基、苯並咪唑基、苯並呋喃基、苯並噻吩基、異苯並噻唑基、苯並噁唑基、異苯並噁唑基、三唑基、四唑基、噁二唑基、三嗪基、二苯並呋喃基、二苯並噻吩基、苯並哢唑基、二苯並哢唑基、咪唑並吡啶基、咪唑並嘧啶基、氮雜哢唑基、氮雜二苯並呋喃基、或氮雜二苯並噻吩基:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C20 烷基、含氘的C1 -C20 烷基、氟化C1 -C20 烷基、C1 -C20 烷氧基、環戊基、環己基、環庚基、環辛基、金剛烷基、降冰片烯基、環戊烯基、環己烯基、環庚烯基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基、二環[2.2.2]辛基、(C1 -C20 烷基)環戊基、(C1 -C20 烷基)環己基、(C1 -C20 烷基)環庚基、(C1 -C20 烷基)環辛基、(C1 -C20 烷基)金剛烷基、(C1 -C20 烷基)降冰片烯基、(C1 -C20 烷基)環戊烯基、(C1 -C20 烷基)環己烯基、(C1 -C20 烷基)環庚烯基、(C1 -C20 烷基)二環[1.1.1]戊基、(C1 -C20 烷基)二環[2.1.1]己基、(C1 -C20 烷基)二環[2.2.1]庚基、(C1 -C20 烷基)二環[2.2.2]辛基、矽雜環戊烷基、苯基、(C1 -C20 烷基)苯基、聯苯基、三聯苯基、萘基、1,2,3,4-四氫萘基、芴基、菲基、蒽基、熒蒽基、苯並[9,10]菲基、芘基、
Figure 02_image007
基、吡咯基、噻吩基、呋喃基、咪唑基、吡唑基、噻唑基、異噻唑基、噁唑基、異噁唑基、吡啶基、吡嗪基、嘧啶基、噠嗪基、異吲哚基、吲哚基、吲唑基、嘌呤基、喹啉基、異喹啉基、苯並喹啉基、喹喔啉基、喹唑啉基、噌啉基、哢唑基、菲咯啉基、苯並咪唑基、苯並呋喃基、苯並噻吩基、異苯並噻唑基、苯並噁唑基、異苯並噁唑基、三唑基、四唑基、噁二唑基、三嗪基、二苯並呋喃基、二苯並噻吩基、苯並哢唑基、二苯並哢唑基、咪唑並吡啶基、咪唑並嘧啶基、氮雜哢唑基、氮雜二苯並呋喃基、氮雜二苯並噻吩基、或其任意組合;或 -N(Q1 )(Q2 )、-Si(Q3 )(Q4 )(Q5 )、-Ge(Q3 )(Q4 )(Q5 )、-B(Q6 )(Q7 )、-P(=O)(Q8 )(Q9 )、或-P(Q8 )(Q9 ),其中R20 既不包括氟基團也不包括氰基, Q1 -Q9 可各自獨立地為: -CH3 、-CD3 、-CD2 H、-CDH2 、-CH2 CH3 、-CH2 CD3 、-CH2 CD2 H、-CH2 CDH2 、-CHDCH3 、-CHDCD2 H、-CHDCDH2 、-CHDCD3 、-CD2 CD3 、-CD2 CD2 H或-CD2 CDH2 ;或 各自未被取代或被如下取代的正丙基、異丙基、正丁基、仲丁基、異丁基、叔丁基、正戊基、叔戊基、新戊基、異戊基、仲戊基、3-戊基、仲異戊基、苯基、聯苯基、或萘基:氘、C1 -C20 烷基、苯基、或其任意組合。For example, R 1 -R 8 , R 13 -R 17 and R 20 in Formula 1 can each independently be: hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, Amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, -SF 5 , C 1 -C 20 alkyl, or C 1- C 20 alkoxy; C 1 -C 20 alkyl or C 1 -C 20 alkoxy each substituted by deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H , -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or Its salt, phosphoric acid group or its salt, C 1 -C 20 alkyl, deuterium-containing C 1 -C 20 alkyl, fluorinated C 1 -C 20 alkyl, cyclopentyl, cyclohexyl, cycloheptyl, Cyclooctyl, adamantyl, norbornenyl, cyclopentenyl, cyclohexenyl, cycloheptenyl, bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[ 2.2.1] Heptyl (norbornanyl), bicyclo[2.2.2] octyl, (C 1 -C 20 alkyl) cyclopentyl, (C 1 -C 20 alkyl) cyclohexyl, (C 1- C 20 alkyl) cycloheptyl, (C 1 -C 20 alkyl) cyclooctyl, (C 1 -C 20 alkyl) adamantyl, (C 1 -C 20 alkyl) norbornenyl , (C 1 -C 20 alkyl) cyclopentenyl, (C 1 -C 20 alkyl) cyclohexenyl, (C 1 -C 20 alkyl) cycloheptenyl, (C 1 -C 20 alkyl) Group) bicyclo[1.1.1]pentyl, (C 1 -C 20 alkyl)bicyclo[2.1.1]hexyl, (C 1 -C 20 alkyl)bicyclo[2.2.1]heptyl, ( C 1 -C 20 alkyl) bicyclo[2.2.2] octyl, silolanyl group, phenyl, (C 1 -C 20 alkyl) phenyl, biphenyl, terphenyl Yl, naphthyl, 1,2,3,4-tetrahydronaphthyl, pyridyl, pyrimidinyl, or any combination thereof; each unsubstituted or substituted by cyclopentyl, cyclohexyl, cycloheptyl, ring Octyl, adamantyl, norbornenyl, cyclopentenyl, cyclohexenyl, cycloheptenyl, bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2 .1]Heptyl, bicyclo[2.2.2]octyl, silyl, phenyl, (C 1 -C 20 alkyl) phenyl, biphenyl, terphenyl, naphthyl, 1 ,2,3,4-Tetrahydronaphthyl, fluorenyl, phenanthryl, anthracenyl, fluoranthene, benzo[9,10]phenanthryl, pyrenyl,
Figure 02_image007
Group, pyrrolyl, thienyl, furyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, isoindyl Dolyl, indolyl, indazolyl, purinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, quinoxalinyl, quinazolinyl, cinnolinyl, oxazolyl, phenanthroline Group, benzimidazolyl, benzofuranyl, benzothienyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, three Azinyl, dibenzofuranyl, dibenzothienyl, benzoxazolyl, dibenzoxazolyl, imidazopyridyl, imidazopyrimidinyl, azazylazolyl, azadibenzofuran Group, or azadibenzothienyl: deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , Hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 20 alkyl , Deuterium-containing C 1 -C 20 alkyl, fluorinated C 1 -C 20 alkyl, C 1 -C 20 alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, Norbornenyl, cyclopentenyl, cyclohexenyl, cycloheptenyl, bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.1]heptyl, two Cyclo[2.2.2]octyl, (C 1 -C 20 alkyl) cyclopentyl, (C 1 -C 20 alkyl) cyclohexyl, (C 1 -C 20 alkyl) cycloheptyl, (C 1 -C 20 alkyl) cyclooctyl, (C 1 -C 20 alkyl) adamantyl, (C 1 -C 20 alkyl) norbornenyl, (C 1 -C 20 alkyl) cyclopentenyl , (C 1 -C 20 alkyl) cyclohexenyl, (C 1 -C 20 alkyl) cycloheptenyl, (C 1 -C 20 alkyl) bicyclo [1.1.1] pentyl, (C 1- C 20 alkyl)bicyclo[2.1.1]hexyl, (C 1 -C 20 alkyl)bicyclo[2.2.1]heptyl, (C 1 -C 20 alkyl)bicyclo[2.2.2 ]Octyl, silyl, phenyl, (C 1 -C 20 alkyl) phenyl, biphenyl, terphenyl, naphthyl, 1,2,3,4-tetrahydronaphthyl, Fluorenyl, phenanthryl, anthracenyl, fluoranthene, benzo[9,10]phenanthryl, pyrenyl,
Figure 02_image007
Group, pyrrolyl, thienyl, furyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, isoindyl Dolyl, indolyl, indazolyl, purinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, quinoxalinyl, quinazolinyl, cinnolinyl, oxazolyl, phenanthroline Group, benzimidazolyl, benzofuranyl, benzothienyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, three Azinyl, dibenzofuranyl, dibenzothienyl, benzoxazolyl, dibenzoxazolyl, imidazopyridyl, imidazopyrimidinyl, azazylazolyl, azadibenzofuran Group, azadibenzothienyl, or any combination thereof; or -N(Q 1 )(Q 2 ), -Si(Q 3 )(Q 4 )(Q 5 ), -Ge(Q 3 )(Q 4 )(Q 5 ), -B(Q 6 )(Q 7 ), -P(=O)(Q 8 )(Q 9 ), or -P(Q 8 )(Q 9 ), where R 20 is neither Including fluorine groups and cyano groups, Q 1 -Q 9 may each independently be: -CH 3 , -CD 3 , -CD 2 H, -CDH 2 , -CH 2 CH 3 , -CH 2 CD 3 , -CH 2 CD 2 H, -CH 2 CDH 2 , -CHDCH 3 , -CHDCD 2 H, -CHDCDH 2 , -CHDCD 3 , -CD 2 CD 3 , -CD 2 CD 2 H or -CD 2 CDH 2 ; or N-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-amyl, neopentyl, isopentyl, sec, each unsubstituted or substituted as follows Pentyl, 3-pentyl, sec-isopentyl, phenyl, biphenyl, or naphthyl: deuterium, C 1 -C 20 alkyl, phenyl, or any combination thereof.

在一種或多種實施方式中,式1中的R1 -R8 、R13 -R17 和R20 可各自獨立地為氫、氘、-F、經取代或未經取代的C1 -C20 烷基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、-Si(Q3 )(Q4 )(Q5 )、或-Ge(Q3 )(Q4 )(Q5 )。這裡,R20 可既不包括氟基團又不包括氰基。In one or more embodiments, R 1 -R 8 , R 13 -R 17 and R 20 in Formula 1 may each independently be hydrogen, deuterium, -F, substituted or unsubstituted C 1 -C 20 Alkyl, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, -Si(Q 3 )(Q 4 )(Q 5 ) , Or -Ge(Q 3 )(Q 4 )(Q 5 ). Here, R 20 may include neither a fluorine group nor a cyano group.

在一種或多種實施方式中,式1中的R1 -R8 和R13 -R17 可各自獨立地為: 氫、氘、或-F; 各自未被取代或被如下取代的C1 -C20 烷基、C3 -C10 環烷基、或C2 -C10 雜環烷基:氘、-F、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合;或 -Si(Q3 )(Q4 )(Q5 )、或-Ge(Q3 )(Q4 )(Q5 )。In one or more embodiments, R 1 -R 8 and R 13 -R 17 in Formula 1 may each independently be: hydrogen, deuterium, or -F; each of C 1 -C is unsubstituted or substituted as follows 20 alkyl, C 3 -C 10 cycloalkyl, or C 2 -C 10 heterocycloalkyl: deuterium, -F, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 Heterocycloalkyl, or any combination thereof; or -Si(Q 3 )(Q 4 )(Q 5 ), or -Ge(Q 3 )(Q 4 )(Q 5 ).

在一種或多種實施方式中,式1中的R20 可為: 氫或氘; 各自未被取代或被如下取代的C1 -C20 烷基、C3 -C10 環烷基、或C2 -C10 雜環烷基:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合;或 -Si(Q3 )(Q4 )(Q5 )、或-Ge(Q3 )(Q4 )(Q5 )。In one or more embodiments, R 20 in Formula 1 may be: hydrogen or deuterium; C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, or C 2 each unsubstituted or substituted as follows -C 10 heterocycloalkyl: deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof; or -Si(Q 3 )( Q 4 )(Q 5 ), or -Ge(Q 3 )(Q 4 )(Q 5 ).

式1中的符號d2表示R20 的數量,並且可為0-10的整數。當d2為2或更大時,兩個或更多個R20 可彼此相同或不同。例如,d2可為0-6的整數。The symbol d2 in Formula 1 represents the number of R 20 , and may be an integer of 0-10. When d2 is 2 or greater, two or more R 20 may be the same or different from each other. For example, d2 can be an integer from 0-6.

在一種或多種實施方式中,式1中的R1 -R8 的至少一個可包括至少一個氟基團(-F)。In one or more embodiments, at least one of R 1 to R 8 in Formula 1 may include at least one fluorine group (-F).

在一種或多種實施方式中,式1的R1 -R8 的至少一個可為包括至少一個氟基團(-F)的基團。In one or more embodiments, at least one of R 1 to R 8 of Formula 1 may be a group including at least one fluorine group (-F).

在一種或多種實施方式中,式1中的R1 -R8 的至少一個可各自獨立地為: 氟基團(-F);或 各自未被取代或被如下取代的氟化C1 -C20 烷基、氟化C3 -C10 環烷基、或氟化C2 -C10 雜環烷基:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。In one or more embodiments, at least one of R 1 -R 8 in Formula 1 may each independently be: a fluorine group (-F); or a fluorinated C 1 -C each unsubstituted or substituted as follows 20 alkyl, fluorinated C 3 -C 10 cycloalkyl, or fluorinated C 2 -C 10 heterocycloalkyl: deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2- C 10 heterocycloalkyl, or any combination thereof.

式1中的R18 和R19 可各自獨立地為經取代或未經取代的C2 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團、或者經取代或未經取代的單價非芳族稠合雜多環基團。R 18 and R 19 in Formula 1 may each independently be a substituted or unsubstituted C 2 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkenyl group, a substituted or unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted C 2 -C 10 heterocycloalkenyl, substituted or unsubstituted C 6 -C 60 aryl group, substituted or unsubstituted C 6 -C 60 aryloxy group, substituted or unsubstituted C 6 -C 60 arylthio group, substituted or unsubstituted C 1 -C 60 Heteroaryl groups, substituted or unsubstituted monovalent non-aromatic fused polycyclic groups, or substituted or unsubstituted monovalent non-aromatic fused heteropolycyclic groups.

例如,式1中的R18 和R19 可各自獨立地為: C2 -C20 烷基或C1 -C20 烷氧基; 各自被如下取代的C2 -C20 烷基或C1 -C20 烷氧基:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C20 烷基、含氘的C1 -C20 烷基、氟化C1 -C20 烷基、環戊基、環己基、環庚基、環辛基、金剛烷基、降冰片烯基、環戊烯基、環己烯基、環庚烯基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基、二環[2.2.2]辛基、(C1 -C20 烷基)環戊基、(C1 -C20 烷基)環己基、(C1 -C20 烷基)環庚基、(C1 -C20 烷基)環辛基、(C1 -C20 烷基)金剛烷基、(C1 -C20 烷基)降冰片烯基、(C1 -C20 烷基)環戊烯基、(C1 -C20 烷基)環己烯基、(C1 -C20 烷基)環庚烯基、(C1 -C20 烷基)二環[1.1.1]戊基、(C1 -C20 烷基)二環[2.1.1]己基、(C1 -C20 烷基)二環[2.2.1]庚基、(C1 -C20 烷基)二環[2.2.2]辛基、矽雜環戊烷基、苯基、(C1 -C20 烷基)苯基、聯苯基、三聯苯基、萘基、1,2,3,4-四氫萘基、吡啶基、嘧啶基、或其任意組合;或 各自未被取代或被如下取代的環戊基、環己基、環庚基、環辛基、金剛烷基、降冰片烯基、環戊烯基、環己烯基、環庚烯基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基、二環[2.2.2]辛基、苯基、(C1 -C20 烷基)苯基、聯苯基、三聯苯基、萘基、1,2,3,4-四氫萘基、芴基、菲基、蒽基、熒蒽基、苯並[9,10]菲基、芘基、䓛基、吡咯基、噻吩基、呋喃基、咪唑基、吡唑基、噻唑基、異噻唑基、噁唑基、異噁唑基、吡啶基、吡嗪基、嘧啶基、噠嗪基、異吲哚基、吲哚基、吲唑基、嘌呤基、喹啉基、異喹啉基、苯並喹啉基、喹喔啉基、喹唑啉基、噌啉基、哢唑基、菲咯啉基、苯並咪唑基、苯並呋喃基、苯並噻吩基、異苯並噻唑基、苯並噁唑基、異苯並噁唑基、三唑基、四唑基、噁二唑基、三嗪基、二苯並呋喃基、二苯並噻吩基、苯並哢唑基、二苯並哢唑基、咪唑並吡啶基、咪唑並嘧啶基、氮雜哢唑基、氮雜二苯並呋喃基、或氮雜二苯並噻吩基:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C20 烷基、含氘的C1 -C20 烷基、氟化C1 -C20 烷基、C1 -C20 烷氧基、環戊基、環己基、環庚基、環辛基、金剛烷基、降冰片烯基、環戊烯基、環己烯基、環庚烯基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基、二環[2.2.2]辛基、(C1 -C20 烷基)環戊基、(C1 -C20 烷基)環己基、(C1 -C20 烷基)環庚基、(C1 -C20 烷基)環辛基、(C1 -C20 烷基)金剛烷基、(C1 -C20 烷基)降冰片烯基、(C1 -C20 烷基)環戊烯基、(C1 -C20 烷基)環己烯基、(C1 -C20 烷基)環庚烯基、(C1 -C20 烷基)二環[1.1.1]戊基、(C1 -C20 烷基)二環[2.1.1]己基、(C1 -C20 烷基)二環[2.2.1]庚基、(C1 -C20 烷基)二環[2.2.2]辛基、矽雜環戊烷基、苯基、(C1 -C20 烷基)苯基、聯苯基、三聯苯基、萘基、1,2,3,4-四氫萘基、芴基、菲基、蒽基、熒蒽基、苯並[9,10]菲基、芘基、

Figure 02_image007
基、吡咯基、噻吩基、呋喃基、咪唑基、吡唑基、噻唑基、異噻唑基、噁唑基、異噁唑基、吡啶基、吡嗪基、嘧啶基、噠嗪基、異吲哚基、吲哚基、吲唑基、嘌呤基、喹啉基、異喹啉基、苯並喹啉基、喹喔啉基、喹唑啉基、噌啉基、哢唑基、菲咯啉基、苯並咪唑基、苯並呋喃基、苯並噻吩基、異苯並噻唑基、苯並噁唑基、異苯並噁唑基、三唑基、四唑基、噁二唑基、三嗪基、二苯並呋喃基、二苯並噻吩基、苯並哢唑基、二苯並哢唑基、咪唑並吡啶基、咪唑並嘧啶基、氮雜哢唑基、氮雜二苯並呋喃基、氮雜二苯並噻吩基、或其任意組合。For example, R 18 and R 19 in Formula 1 may each independently be: C 2 -C 20 alkyl or C 1 -C 20 alkoxy; C 2 -C 20 alkyl or C 1 -each substituted as follows C 20 Alkoxy: Deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano , Nitro group, amino group, amidino group, hydrazine group, hydrazone group, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 20 alkyl group, deuterium-containing C 1 -C 20 alkyl, fluorinated C 1 -C 20 alkyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornenyl, cyclopentenyl, cyclohexenyl , Cycloheptenyl, bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.1]heptyl, bicyclo[2.2.2]octyl, (C 1 -C 20 alkyl) cyclopentyl, (C 1 -C 20 alkyl) cyclohexyl, (C 1 -C 20 alkyl) cycloheptyl, (C 1 -C 20 alkyl) cyclooctyl, (C 1- C 20 alkyl) adamantyl, (C 1 -C 20 alkyl) norbornenyl, (C 1 -C 20 alkyl) cyclopentenyl, (C 1 -C 20 alkyl) cyclohexenyl , (C 1 -C 20 alkyl) cycloheptenyl, (C 1 -C 20 alkyl) bicyclo [1.1.1] pentyl, (C 1 -C 20 alkyl) bicyclo [2.1.1] Hexyl, (C 1 -C 20 alkyl) bicyclo[2.2.1] heptyl, (C 1 -C 20 alkyl) bicyclo [2.2.2] octyl, silyl, phenyl, (C 1 -C 20 alkyl) phenyl, biphenyl, terphenyl, naphthyl, 1,2,3,4-tetrahydronaphthyl, pyridyl, pyrimidinyl, or any combination thereof; or each Cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornenyl, cyclopentenyl, cyclohexenyl, cycloheptenyl, bicyclo [1.1 .1]Pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.1]heptyl, bicyclo[2.2.2]octyl, phenyl, (C 1 -C 20 alkyl)phenyl, Biphenyl, terphenyl, naphthyl, 1,2,3,4-tetrahydronaphthyl, fluorenyl, phenanthryl, anthracenyl, fluoranthene, benzo[9,10]phenanthryl, pyrenyl, Zyl, pyrrolyl, thienyl, furyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, iso Indolyl, indolyl, indazolyl, purinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, quinoxalinyl, quinazolinyl, cinnolinyl, oxazolyl, phenanthroline Linyl, benzimidazolyl, benzofuranyl, benzothienyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, Triazinyl, dibenzofuranyl, dibenzothiol Phenyl, benzoxazolyl, dibenzoxazolyl, imidazopyridyl, imidazopyrimidinyl, azaazolyl, azadibenzofuranyl, or azadibenzothienyl: deuterium , -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidine Group, hydrazine group, hydrazone group, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 20 alkyl group, deuterium-containing C 1 -C 20 alkyl group, Fluorinated C 1 -C 20 alkyl, C 1 -C 20 alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornenyl, cyclopentenyl, cyclohexyl Alkenyl, cycloheptenyl, bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.1]heptyl, bicyclo[2.2.2]octyl, (C 1 -C 20 alkyl) cyclopentyl, (C 1 -C 20 alkyl) cyclohexyl, (C 1 -C 20 alkyl) cycloheptyl, (C 1 -C 20 alkyl) cyclooctyl, (C 1- C 20 alkyl) adamantyl, (C 1 -C 20 alkyl) norbornenyl, (C 1 -C 20 alkyl) cyclopentenyl, (C 1 -C 20 alkyl) cyclohexyl Alkenyl, (C 1 -C 20 alkyl) cycloheptenyl, (C 1 -C 20 alkyl)bicyclo[1.1.1]pentyl, (C 1 -C 20 alkyl)bicyclo[2.1. 1] Hexyl, (C 1 -C 20 alkyl)bicyclo[2.2.1]heptyl, (C 1 -C 20 alkyl)bicyclo[2.2.2]octyl, silacyclopentane, benzene Group, (C 1 -C 20 alkyl) phenyl, biphenyl, terphenyl, naphthyl, 1,2,3,4-tetrahydronaphthyl, fluorenyl, phenanthryl, anthracenyl, fluoranthene , Benzo[9,10]phenanthryl, pyrenyl,
Figure 02_image007
Group, pyrrolyl, thienyl, furyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, isoindyl Dolyl, indolyl, indazolyl, purinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, quinoxalinyl, quinazolinyl, cinnolinyl, oxazolyl, phenanthroline Group, benzimidazolyl, benzofuranyl, benzothienyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, oxadiazolyl, three Azinyl, dibenzofuranyl, dibenzothienyl, benzoxazolyl, dibenzoxazolyl, imidazopyridyl, imidazopyrimidinyl, azazylazolyl, azadibenzofuran Group, azadibenzothienyl, or any combination thereof.

在一種或多種實施方式中,式1中的R18 和R19 可各自獨立地為經取代或未經取代的C2 -C60 烷基、經取代或未經取代的C3 -C10 環烷基、或者經取代或未經取代的C2 -C10 雜環烷基。In one or more embodiments, R 18 and R 19 in Formula 1 may each independently be a substituted or unsubstituted C 2 -C 60 alkyl group, a substituted or unsubstituted C 3 -C 10 ring Alkyl, or substituted or unsubstituted C 2 -C 10 heterocycloalkyl.

在一種或多種實施方式中,式1中的R18 和R19 可各自獨立地為各自未被取代或被如下取代的C2 -C20 烷基、C3 -C10 環烷基、或C2 -C10 雜環烷基:氘、-F、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。In one or more embodiments, R 18 and R 19 in Formula 1 may each independently be a C 2 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group, or C 2- C 10 heterocycloalkyl: deuterium, -F, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof.

例如,式1中的R1 -R8 和R13 -R17 可各自獨立地為氫、氘、-F、-CH3 、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、由式9-1至9-39之一表示的基團、其中至少一個氫被氘代替的由式9-1至9-39之一表示的基團、其中至少一個氫被-F代替的由式9-1至9-39之一表示的基團、由式9-201至9-233之一表示的基團、其中至少一個氫被氘代替的由式9-201至9-233之一表示的基團、其中至少一個氫被-F代替的由式9-201至9-233之一表示的基團、由式10-1至10-126之一表示的基團、其中至少一個氫被氘代替的由式10-1至10-126之一表示的基團、其中至少一個氫被-F代替的由式10-1至10-126之一表示的基團、由式10-201至10-343之一表示的基團、其中至少一個氫被氘代替的由式10-201至10-343之一表示的基團、其中至少一個氫被-F代替的由式10-201至10-343之一表示的基團、-Si(Q3 )(Q4 )(Q5 )、或-Ge(Q3 )(Q4 )(Q5 ) (這裡,Q3 -Q5 與本說明書中描述的相同),並且R1 -R8 的至少一個可為-F、-CF3 、-CF2 H、-CFH2 、其中至少一個氫被-F代替的由式9-1至9-39之一表示的基團、其中至少一個氫被-F代替的由式9-201至9-233之一表示的基團、其中至少一個氫被-F代替的由式10-1至10-126之一表示的基團、或其中至少一個氫被-F代替的由式10-201至10-343之一表示的基團。For example, R 1 -R 8 and R 13 -R 17 in Formula 1 may each independently be hydrogen, deuterium, -F, -CH 3 , -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , a group represented by one of formulas 9-1 to 9-39, a group represented by one of formulas 9-1 to 9-39 in which at least one hydrogen is replaced by deuterium, wherein A group represented by one of formulae 9-1 to 9-39 in which at least one hydrogen is replaced by -F, a group represented by one of formulae 9-201 to 9-233, and a group in which at least one hydrogen is replaced by deuterium A group represented by one of 9-201 to 9-233, a group represented by one of formulas 9-201 to 9-233 in which at least one hydrogen is replaced by -F, one of formulas 10-1 to 10-126 A group represented by a group represented by one of formulas 10-1 to 10-126 in which at least one hydrogen is replaced by deuterium, a group represented by one of formulae 10-1 to 10-126 in which at least one hydrogen is replaced by -F A group represented by one of formulas 10-201 to 10-343, a group represented by one of formulas 10-201 to 10-343 in which at least one hydrogen is replaced by deuterium, in which at least one hydrogen is- The group represented by one of formulas 10-201 to 10-343, -Si(Q 3 )(Q 4 )(Q 5 ), or -Ge(Q 3 )(Q 4 )(Q 5 ) ( Here, Q 3 -Q 5 are the same as described in this specification), and at least one of R 1 -R 8 may be -F, -CF 3 , -CF 2 H, -CFH 2 , and at least one hydrogen is -F A substituted group represented by one of formulas 9-1 to 9-39, a group represented by one of formulas 9-201 to 9-233 in which at least one hydrogen is replaced by -F, in which at least one hydrogen is replaced by -F The substituted group represented by one of formulas 10-1 to 10-126, or a group represented by one of formulas 10-201 to 10-343 in which at least one hydrogen is replaced by -F.

在一種或多種實施方式中,式1中的R20 可為氫、氘、-CH3 、-CD3 、-CD2 H、-CDH2 、由式9-1至9-39之一表示的基團、其中至少一個氫被氘代替的由式9-1至9-39之一表示的基團、由式9-201至9-233之一表示的基團、其中至少一個氫被氘代替的由式9-201至9-233之一表示的基團、由式10-1至10-126之一表示的基團、其中至少一個氫被氘代替的由式10-1至10-126之一表示的基團、由式10-201至10-343之一表示的基團、其中至少一個氫被氘代替的由式10-201至10-343之一表示的基團、-Si(Q3 )(Q4 )(Q5 )、或-Ge(Q3 )(Q4 )(Q5 ) (這裡,Q3 -Q5 與本說明書中描述的相同)。In one or more embodiments, R 20 in Formula 1 may be hydrogen, deuterium, -CH 3 , -CD 3 , -CD 2 H, -CDH 2 , represented by one of formulas 9-1 to 9-39 A group, a group represented by one of formulae 9-1 to 9-39 in which at least one hydrogen is replaced by deuterium, a group represented by one of formulae 9-201 to 9-233, in which at least one hydrogen is replaced by deuterium A group represented by one of formulas 9-201 to 9-233, a group represented by one of formulas 10-1 to 10-126, and a group in which at least one hydrogen is replaced by deuterium by formulas 10-1 to 10-126 A group represented by one of formulas 10-201 to 10-343, a group represented by one of formulas 10-201 to 10-343 in which at least one hydrogen is replaced by deuterium, -Si( Q 3 )(Q 4 )(Q 5 ), or -Ge(Q 3 )(Q 4 )(Q 5 ) (here, Q 3 -Q 5 are the same as described in this specification).

在一種或多種實施方式中,式1中的R18 和R19 可各自獨立地為由式9-1至9-39之一表示的基團、其中至少一個氫被氘代替的由式9-1至9-39之一表示的基團、其中至少一個氫被-F代替的由式9-1至9-39之一表示的基團、由式9-201至9-233之一表示的基團、其中至少一個氫被氘代替的由式9-201至9-233之一表示的基團、其中至少一個氫被-F代替的由式9-201至9-233之一表示的基團、由式10-1至10-126之一表示的基團、其中至少一個氫被氘代替的由式10-1至10-126之一表示的基團、其中至少一個氫被-F代替的由式10-1至10-126之一表示的基團、由式10-201至10-343之一表示的基團、其中至少一個氫被氘代替的由式10-201至10-343之一表示的基團、或其中至少一個氫被-F代替的由式10-201至10-343之一表示的基團:

Figure 02_image010
Figure 02_image012
Figure 02_image014
Figure 02_image016
Figure 02_image018
Figure 02_image020
Figure 02_image022
Figure 02_image024
Figure 02_image026
Figure 02_image028
Figure 02_image030
Figure 02_image032
Figure 02_image034
Figure 02_image036
Figure 02_image038
Figure 02_image040
Figure 02_image042
Figure 02_image044
。In one or more embodiments, R 18 and R 19 in Formula 1 may each independently be a group represented by one of Formulas 9-1 to 9-39, in which at least one hydrogen is replaced by deuterium by Formula 9- A group represented by one of 1 to 9-39, a group represented by one of formulas 9-1 to 9-39 in which at least one hydrogen is replaced by -F, a group represented by one of formulas 9-201 to 9-233 A group, a group represented by one of formulae 9-201 to 9-233 in which at least one hydrogen is replaced by deuterium, a group represented by one of formulae 9-201 to 9-233 in which at least one hydrogen is replaced by -F Group, a group represented by one of formulas 10-1 to 10-126, a group represented by one of formulas 10-1 to 10-126 in which at least one hydrogen is replaced by deuterium, in which at least one hydrogen is replaced by -F A group represented by one of formulas 10-1 to 10-126, a group represented by one of formulas 10-201 to 10-343, and a group in which at least one hydrogen is replaced by deuterium by formulas 10-201 to 10-343 A group represented by one or a group represented by one of formulas 10-201 to 10-343 in which at least one hydrogen is replaced by -F:
Figure 02_image010
Figure 02_image012
Figure 02_image014
Figure 02_image016
Figure 02_image018
Figure 02_image020
Figure 02_image022
Figure 02_image024
Figure 02_image026
Figure 02_image028
Figure 02_image030
Figure 02_image032
Figure 02_image034
Figure 02_image036
Figure 02_image038
Figure 02_image040
Figure 02_image042
Figure 02_image044
.

式9-1至9-39、9-201至9-233、10-1至10-126和10-201至10-343中的*表示與相鄰原子的結合位點,Ph為苯基,TMS為三甲基甲矽烷基,且TMG為三甲基甲鍺烷基。* In formulas 9-1 to 9-39, 9-201 to 9-233, 10-1 to 10-126, and 10-201 to 10-343 represents the binding site with adjacent atoms, Ph is a phenyl group, TMS is trimethylsilyl, and TMG is trimethylgermyl.

“其中至少一個氫被氘代替的由式9-1至9-39之一表示的基團”和“其中至少一個氫被氘代替的由式9-201至9-233之一表示的基團”可各自為例如由式9-501至9-514和9-601至9-635之一表示的基團:

Figure 02_image046
Figure 02_image048
Figure 02_image050
。"A group represented by one of formulae 9-1 to 9-39 in which at least one hydrogen is replaced by deuterium" and "a group represented by one of formulae 9-201 to 9-233 in which at least one hydrogen is replaced by deuterium""May each be a group represented by, for example, one of formulas 9-501 to 9-514 and 9-601 to 9-635:
Figure 02_image046
Figure 02_image048
Figure 02_image050
.

“其中至少一個氫被-F代替的由式9-1至9-39之一表示的基團”和“其中至少一個氫被-F代替的由式9-201至9-233之一表示的基團”可各自為例如由式9-701至9-710之一表示的基團:

Figure 02_image052
。"A group represented by one of formulae 9-1 to 9-39 in which at least one hydrogen is replaced by -F" and "a group represented by one of formulae 9-201 to 9-233 in which at least one hydrogen is replaced by -F The group" may each be, for example, a group represented by one of formulas 9-701 to 9-710:
Figure 02_image052
.

“其中至少一個氫被氘代替的由式10-1至10-126之一表示的基團”和“其中至少一個氫被氘代替的由式10-201至10-343之一表示的基團”可各自為例如由式10-501至10-553之一表示的基團:

Figure 02_image054
Figure 02_image056
Figure 02_image058
。"A group represented by one of formulae 10-1 to 10-126 in which at least one hydrogen is replaced by deuterium" and "a group represented by one of formulae 10-201 to 10-343 in which at least one hydrogen is replaced by deuterium""May each be a group represented by, for example, one of formulas 10-501 to 10-553:
Figure 02_image054
Figure 02_image056
Figure 02_image058
.

“其中至少一個氫被-F代替的由式10-1至10-126之一表示的基團”和“其中至少一個氫被-F代替的由式10-201至10-343之一表示的基團”可各自為例如由式10-601至10-615之一表示的基團:

Figure 02_image060
。"A group represented by one of formulae 10-1 to 10-126 in which at least one hydrogen is replaced by -F" and "a group represented by one of formulae 10-201 to 10-343 in which at least one hydrogen is replaced by -F" The group" may each be, for example, a group represented by one of formulas 10-601 to 10-615:
Figure 02_image060
.

在一種或多種實施方式中,式1的R4 -R8 的至少一個(例如,R4 -R8 的一個或兩個)可包括至少一個氟基團(-F)。 在一種或多種實施方式中,在式1中, 1) R4 可包括至少一個氟基團(-F); 2) R5 可包括至少一個氟基團(-F); 3) R6 可包括至少一個氟基團(-F); 4) R7 可包括至少一個氟基團(-F); 5) R8 可包括至少一個氟基團(-F); 6) R5 和R6 可各自包括至少一個氟基團(-F); 7) R5 和R7 可各自包括至少一個氟基團(-F); 8) R5 和R8 可各自包括至少一個氟基團(-F); 9) R6 和R7 可各自包括至少一個氟基團(-F); 10) R6 和R8 可各自包括至少一個氟基團(-F);或 11) R7 和R8 可各自包括至少一個氟基團(-F)。 在一種或多種實施方式中,關於式1, R1 -R8 的一個或兩個可各自獨立地包括至少一個氟基團(-F),且 R1 -R8 的至少一個i)可不包括氟基團(-F),且ii)可不為氫。In one or more embodiments, R 4 -R Formula 1 is at least one (e.g., R 4 -R 8 one or two) of at least 8 may include a fluoro group (-F). In one or more embodiments, in Formula 1, 1) R 4 may include at least one fluorine group (-F); 2) R 5 may include at least one fluorine group (-F); 3) R 6 may Includes at least one fluorine group (-F); 4) R 7 may include at least one fluorine group (-F); 5) R 8 may include at least one fluorine group (-F); 6) R 5 and R 6 May each include at least one fluorine group (-F); 7) R 5 and R 7 may each include at least one fluorine group (-F); 8) R 5 and R 8 may each include at least one fluorine group (- F); 9) R 6 and R 7 may each include at least one fluorine group (-F); 10) R 6 and R 8 may each include at least one fluorine group (-F); or 11) R 7 and R 8 may each include at least one fluoro group (-F). In one or more embodiments, with respect to Formula 1, one or two of R 1 -R 8 may each independently include at least one fluorine group (-F), and at least one i) of R 1 -R 8 may not include The fluoro group (-F), and ii) may not be hydrogen.

在一種或多種實施方式中,式1中的R1 和R3 的至少一個可不為氫。In one or more embodiments, at least one of R 1 and R 3 in Formula 1 may not be hydrogen.

在一種或多種實施方式中,式1中的R20 可為各自未被取代或被如下取代的C1 -C20 烷基、C3 -C10 環烷基、或C2 -C10 雜環烷基:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。In one or more embodiments, R 20 in Formula 1 may be a C 1 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group, or a C 2 -C 10 heterocyclic ring each unsubstituted or substituted as follows Alkyl: deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof.

在一種或多種實施方式中,式1中的R20 可為未被取代或被氘、C1 -C20 烷基、或其任意組合取代的C1 -C20 烷基。In one or more embodiments, the formula 1 R 20 may be unsubstituted or substituted with deuterium, C 1 -C 20 alkyl group, or any combination thereof C 1 -C 20 substituted alkyl.

在一種或多種實施方式中,式1中的d2可為2。In one or more embodiments, d2 in Formula 1 may be 2.

在一種或多種實施方式中,式1中的R20 可為未被取代或被氘、C1 -C20 烷基、或其任意組合取代的C1 -C20 烷基,並且d2可為2。In one or more embodiments, the formula 1 R 20 may be unsubstituted or substituted with deuterium, C 1 -C 20 alkyl group, or any combination thereof C 1 -C 20 substituted alkyl, and d2 may be 2 .

在一種或多種實施方式中,由式1表示的有機金屬化合物可具有至少一個氘。In one or more embodiments, the organometallic compound represented by Formula 1 may have at least one deuterium.

在一種或多種實施方式中,式1的R1 -R8 的至少一個可具有至少一個氘。In one or more embodiments, at least one of R 1 -R 8 of Formula 1 may have at least one deuterium.

在一種或多種實施方式中,數量為d2的R20 的至少一個可具有至少一個氘。In one or more embodiments, at least one of R 20 having the number d2 may have at least one deuterium.

在一種或多種實施方式中,數量為d2的R20 的至少一個可為各自未被取代或被如下取代的含氘的C1 -C20 烷基、含氘的C3 -C10 環烷基、或含氘的C2 -C10 雜環烷基:C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。In one or more embodiments, at least one of R 20 in the number d2 may be a deuterium-containing C 1 -C 20 alkyl group or a deuterium-containing C 3 -C 10 cycloalkyl group that is unsubstituted or substituted as follows , Or C 2 -C 10 heterocycloalkyl containing deuterium: C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof.

在式1中,1)R1 -R8 的兩個或更多個可任選地彼此連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團,2)數量為d2的R20 的兩個或更多個可任選地彼此連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團,且3)R13 -R19 的兩個或更多個可任選地彼此連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團。這裡,R1a 可通過參照R2 的描述而理解。In Formula 1, 1) Two or more of R 1 -R 8 may be optionally connected to each other to form a C 5 -C 30 carbocyclic group that is unsubstituted or substituted with at least one R 1a , or A C 1 -C 30 heterocyclic group that is unsubstituted or substituted with at least one R 1a , 2) two or more of R 20 whose number is d2 may be optionally connected to each other to form an unsubstituted or substituted with at least one of R 1a C 5 -C 30 carbocyclic group, or an unsubstituted or substituted by at least one R 1a is C 1 -C 30 heterocyclic group, and 3) R 13 -R 19 of the two or more can be linked to form an optionally unsubstituted or substituted with at least one R 1a is C 5 -C 30 carbocyclic group with one another, or at least one unsubstituted or substituted C 1 R 1a -C 30 heterocyclic group. Here, R 1a can be understood by referring to the description of R 2 .

如本文中使用的術語“C5 -C30 碳環基團”指的是僅具有5-30個碳原子作為成環原子的飽和或不飽和環狀基團。所述C5 -C30 碳環基團可為單環基團或多環基團。術語“(未經取代的或被至少一個R1 a 取代的)C5 -C30 碳環基團”可包括例如各自未被取代或被至少一個R1 a 取代的金剛烷基團、降冰片烯基團、二環[1.1.1]戊烷基團、二環[2.1.1]己烷基團、二環[2.2.1]庚烷基團(降莰烷基團)、二環[2.2.2]辛烷基團、環戊烷基團、環己烷基團、環己烯基團、苯基團、萘基團、蒽基團、菲基團、苯並[9,10]菲基團、芘基團、

Figure 02_image007
基團、1,2,3,4-四氫萘基團、環戊二烯基團和芴基團。The term "C 5 -C 30 carbocyclic group" as used herein refers to a saturated or unsaturated cyclic group having only 5-30 carbon atoms as ring-forming atoms. The C 5 -C 30 carbocyclic group may be a monocyclic group or a polycyclic group. The term "(unsubstituted or substituted with at least one R 1 a ) C 5 -C 30 carbocyclic group" may include, for example, adamantyl groups each unsubstituted or substituted with at least one R 1 a , norbornyl Alkenyl group, bicyclo[1.1.1] pentane group, bicyclo[2.1.1] hexane group, bicyclo[2.2.1] heptyl group (norbornane group), bicyclo[ 2.2.2] Octyl group, cyclopentane group, cyclohexane group, cyclohexene group, phenyl group, naphthalene group, anthracene group, phenanthrene group, benzo[9,10] Phenanthrene group, pyrene group,
Figure 02_image007
Group, 1,2,3,4-tetrahydronaphthalene group, cyclopentadiene group and fluorene group.

如本文中使用的術語“C1 -C30 雜環基團”指的是除1-30個碳原子之外還具有選自N、O、Si、P、Se、Ge、B和S的至少一個雜原子作為成環原子的飽和或不飽和環狀基團。所述C1 -C30 雜環基團可為單環基團或多環基團。“(未經取代的或被至少一個R1 a 取代的)C1 -C30 雜環基團”可包括例如各自未被取代或被至少一個R1 a 取代的噻吩基團、呋喃基團、吡咯基團、噻咯基團、硼雜環戊二烯基團、磷雜環戊二烯基團、硒吩基團、鍺雜環戊二烯基團、苯並噻吩基團、苯並呋喃基團、吲哚基團、茚基團、苯並噻咯基團、苯並硼雜環戊二烯基團、苯並磷雜環戊二烯基團、苯並硒吩基團、苯並鍺雜環戊二烯基團、二苯並噻吩基團、二苯並呋喃基團、哢唑基團、二苯並噻咯基團、二苯並硼雜環戊二烯基團、二苯並磷雜環戊二烯基團、二苯並硒吩基團、二苯並鍺雜環戊二烯基團、二苯並噻吩5-氧化物基團、9H-芴-9-酮基團、二苯並噻吩5,5-二氧化物基團、氮雜苯並噻吩基團、氮雜苯並呋喃基團、氮雜吲哚基團、氮雜茚基團、氮雜苯並噻咯基團、氮雜苯並硼雜環戊二烯基團、氮雜苯並磷雜環戊二烯基團、氮雜苯並硒吩基團、氮雜苯並鍺雜環戊二烯基團、氮雜二苯並噻吩基團、氮雜二苯並呋喃基團、氮雜哢唑基團、氮雜芴基團、氮雜二苯並噻咯基團、氮雜二苯並硼雜環戊二烯基團、氮雜二苯並磷雜環戊二烯基團、氮雜二苯並硒吩基團、氮雜二苯並鍺雜環戊二烯基團、氮雜二苯並噻吩5-氧化物基團、氮雜-9H-芴-9-酮基團、氮雜二苯並噻吩5,5-二氧化物基團、吡啶基團、嘧啶基團、吡嗪基團、噠嗪基團、三嗪基團、喹啉基團、異喹啉基團、喹喔啉基團、喹唑啉基團、菲咯啉基團、吡唑基團、咪唑基團、三唑基團、噁唑基團、異噁唑基團、噻唑基團、異噻唑基團、噁二唑基團、噻二唑基團、苯並吡唑基團、苯並咪唑基團、苯並噁唑基團、苯並噻唑基團、苯並噁二唑基團、苯並噻二唑基團、5,6,7,8-四氫異喹啉基團和5,6,7,8-四氫喹啉基團。The term "C 1 -C 30 heterocyclic group" as used herein refers to having at least 1-30 carbon atoms selected from N, O, Si, P, Se, Ge, B and S A heteroatom is a saturated or unsaturated cyclic group as a ring atom. The C 1 -C 30 heterocyclic group may be a monocyclic group or a polycyclic group. "(Unsubstituted or substituted with at least one R 1 a ) C 1 -C 30 heterocyclic group" may include, for example, a thiophene group, a furan group, each unsubstituted or substituted with at least one R 1 a , Pyrrole group, silole group, borocyclopentadiene group, phosphocyclopentadiene group, selenophene group, germanocyclopentadiene group, benzothiophene group, benzofuran Group, indole group, indene group, benzosilole group, benzoborole group, benzophosphoryl group, benzoselenophene group, benzo Germanium group, dibenzothiophene group, dibenzofuran group, oxazole group, dibenzosilole group, dibenzoborole group, diphenyl Phosphorus group, dibenzoselenophene group, dibenzogermanium cyclopentadienyl group, dibenzothiophene 5-oxide group, 9H-fluorene-9-one group , Dibenzothiophene 5,5-dioxide group, azabenzothiophene group, azabenzofuran group, azaindole group, azaindenyl group, azabenzothiazole Group, azabenzoborole group, azabenzophosphoryl group, azabenzoselenophene group, azabenzogermanium group , Azadibenzothiophene group, azadibenzofuran group, azadiazole group, azafluorene group, azadibenzosilole group, azadibenzoboron heterocycle Pentadiene group, azadibenzophosphoryl group, azadibenzoselenophene group, azadibenzogermantocyclopentadiene group, azadibenzothiophene 5-oxide group, aza-9H-fluorene-9-one group, azadibenzothiophene 5,5-dioxide group, pyridine group, pyrimidine group, pyrazine group, pyridine Azinyl group, triazine group, quinoline group, isoquinoline group, quinoxaline group, quinazoline group, phenanthroline group, pyrazole group, imidazole group, triazole group Group, oxazole group, isoxazole group, thiazole group, isothiazole group, oxadiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole Azole group, benzothiazole group, benzoxadiazole group, benzothiadiazole group, 5,6,7,8-tetrahydroisoquinoline group and 5,6,7,8- Tetrahydroquinoline group.

如本文中使用的術語“C1 -C60 烷基”指的是具有1-60個碳原子的直鏈或支鏈飽和脂族烴單價基團,並且其非限制性實例包括甲基、乙基、丙基、異丁基、仲丁基、叔丁基、戊基、異戊基和己基。本文中使用的術語“C1 -C60 亞烷基”指的是具有與C1 -C60 烷基的結構相同的結構的二價基團。The term "C 1 -C 60 alkyl" as used herein refers to a linear or branched saturated aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, and non-limiting examples thereof include methyl, ethyl Group, propyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl and hexyl. The term "C 1 -C 60 alkylene" used herein refers to a divalent group having the same structure as that of a C 1 -C 60 alkyl group.

C1 -C60 烷基、C1 -C20 烷基和/或C1 -C10 烷基的非限制性實例為各自未被取代或被如下取代的甲基、乙基、正丙基、異丙基、正丁基、仲丁基、異丁基、叔丁基、正戊基、叔戊基、新戊基、異戊基、仲戊基、3-戊基、仲異戊基、正己基、異己基、仲己基、叔己基、正庚基、異庚基、仲庚基、叔庚基、正辛基、異辛基、仲辛基、叔辛基、正壬基、異壬基、仲壬基、叔壬基、正癸基、異癸基、仲癸基和叔癸基:甲基、乙基、正丙基、異丙基、正丁基、仲丁基、異丁基、叔丁基、正戊基、叔戊基、新戊基、異戊基、仲戊基、3-戊基、仲異戊基、正己基、異己基、仲己基、叔己基、正庚基、異庚基、仲庚基、叔庚基、正辛基、異辛基、仲辛基、叔辛基、正壬基、異壬基、仲壬基、叔壬基、正癸基、異癸基、仲癸基、叔癸基、或其任意組合。例如,式9-33可為支鏈C6 烷基,並且可為被兩個甲基取代的叔丁基。Non-limiting examples of C 1 -C 60 alkyl, C 1 -C 20 alkyl and/or C 1 -C 10 alkyl are each unsubstituted or substituted methyl, ethyl, n-propyl, Isopropyl, n-butyl, sec-butyl, isobutyl, t-butyl, n-pentyl, t-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, N-hexyl, isohexyl, sec-hexyl, t-hexyl, n-heptyl, isoheptyl, sec-heptyl, t-heptyl, n-octyl, isooctyl, sec-octyl, t-octyl, n-nonyl, isonon Base, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl and tert-decyl: methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl Base, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl Base, isoheptyl, sec-heptyl, t-heptyl, n-octyl, isooctyl, s-octyl, t-octyl, n-nonyl, isononyl, s-nonyl, t-nonyl, n-decyl, Isodecyl, secondary decyl, tert-decyl, or any combination thereof. For example, Formula 9-33 may be a branched C6 alkyl group, and may be a tert-butyl group substituted with two methyl groups.

本文中使用的術語“C1 -C60 烷氧基”指的是由-OA101 (其中 A101 為C1 -C60 烷基)表示的單價基團,並且其實例包括甲氧基、乙氧基和異丙氧基。C1 -C60 烷氧基、C1 -C20 烷氧基、或C1 -C10 烷氧基的非限制性實例為甲氧基、乙氧基、丙氧基、丁氧基和戊氧基。The term "C 1 -C 60 alkoxy" as used herein refers to a monovalent group represented by -OA 101 (wherein A 101 is a C 1 -C 60 alkyl group), and examples thereof include methoxy, ethyl Oxy and isopropoxy. Non-limiting examples of C 1 -C 60 alkoxy, C 1 -C 20 alkoxy, or C 1 -C 10 alkoxy are methoxy, ethoxy, propoxy, butoxy and pentyl Oxy.

如本文中使用的術語“C3 -C10 環烷基”指的是具有3-10個碳原子的單價飽和烴單環基團,並且其實例包括環丙基、環丁基、環戊基、環己基和環庚基。如本文中使用的術語“C3 -C10 亞環烷基”指的是具有與C3 -C10 環烷基的結構相同的結構的二價基團。C3 -C10 環烷基的非限制性實例為環丙基、環丁基、環戊基、環己基、環庚基、環辛基、金剛烷基、二環[1.1.1]戊基、二環[2.1.1]己基、二環[2.2.1]庚基(降莰烷基)和二環[2.2.2]辛基。The term "C 3 -C 10 cycloalkyl" as used herein refers to a monovalent saturated hydrocarbon monocyclic group having 3-10 carbon atoms, and examples thereof include cyclopropyl, cyclobutyl, and cyclopentyl , Cyclohexyl and cycloheptyl. The term "C 3 -C 10 cycloalkylene" as used herein refers to a divalent group having the same structure as that of a C 3 -C 10 cycloalkyl group. Non-limiting examples of C 3 -C 10 cycloalkyl groups are cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, bicyclo[1.1.1]pentyl , Bicyclo[2.1.1]hexyl, bicyclo[2.2.1]heptyl (norbornanyl) and bicyclo[2.2.2]octyl.

如本文中使用的術語“C2 -C10 雜環烷基”指的是具有N、O、P、Si、Se、Ge、B、或S的至少一個雜原子作為成環原子和1-10個碳原子的單價飽和單環基團,並且其非限制性實例包括四氫呋喃基和四氫噻吩基。如本文中使用的術語“C2 -C10 亞雜環烷基”指的是具有與C2 -C10 雜環烷基相同的結構的二價基團。C2 -C10 雜環烷基的非限制性實例為矽雜環戊烷基、矽雜環己烷基、四氫呋喃基、四氫-2H-吡喃基和四氫噻吩基。The term "C 2 -C 10 heterocycloalkyl" as used herein refers to having at least one heteroatom of N, O, P, Si, Se, Ge, B, or S as a ring-forming atom and 1-10 A monovalent saturated monocyclic group of three carbon atoms, and non-limiting examples thereof include tetrahydrofuranyl and tetrahydrothienyl. The term "C 2 -C 10 heterocycloalkylene" as used herein refers to a divalent group having the same structure as C 2 -C 10 heterocycloalkyl. Non-limiting examples of C 2 -C 10 heterocycloalkyl are silacyclopentane, silacyclohexyl, tetrahydrofuranyl, tetrahydro-2H-pyranyl, and tetrahydrothienyl.

如本文中使用的術語“C2 -C60 烯基”指的是通過在C2 -C60 烷基的中間或末端處代入至少一個碳-碳雙鍵而形成的烴基,並且其實例包括乙烯基、丙烯基和丁烯基。如本文中使用的術語“C2 -C60 亞烯基”指的是具有與C2 -C60 烯基的結構相同的結構的二價基團。The term "C 2 -C 60 alkenyl" as used herein refers to a hydrocarbon group formed by substituting at least one carbon-carbon double bond in the middle or end of a C 2 -C 60 alkyl group, and examples thereof include ethylene Group, propenyl and butenyl. The term "C 2 -C 60 alkenylene" as used herein refers to a divalent group having the same structure as that of a C 2 -C 60 alkenyl group.

如本文中使用的術語“C2 -C60 炔基”指的是通過在C2 -C60 烷基的中間或末端處代入至少一個碳-碳三鍵而形成的烴基,並且其實例包括乙炔基和丙炔基。如本文中使用的術語“C2 -C60 亞炔基”指的是具有與C2 -C60 炔基的結構相同的結構的二價基團。The term "C 2 -C 60 alkynyl group" as used herein refers to a hydrocarbon group formed by substituting at least one carbon-carbon triple bond in the middle or terminal of a C 2 -C 60 alkyl group, and examples thereof include acetylene And propynyl. The term "C 2 -C 60 alkynylene" as used herein refers to a divalent group having the same structure as that of the C 2 -C 60 alkynyl group.

如本文中使用的術語“C3 -C10 環烯基”指的是在其環中具有3-10個碳原子和至少一個碳-碳雙鍵並且不具有芳香性的單價單環基團,並且其非限制性實例包括環戊烯基、環己烯基和環庚烯基。如本文中使用的術語“C3 -C10 亞環烯基”指的是具有與C3 -C10 環烯基相同的結構的二價基團。The term "C 3 -C 10 cycloalkenyl" as used herein refers to a monovalent monocyclic group that has 3-10 carbon atoms and at least one carbon-carbon double bond in its ring and does not have aromaticity, And non-limiting examples thereof include cyclopentenyl, cyclohexenyl and cycloheptenyl. The term "C 3 -C 10 cycloalkenylene" as used herein refers to a divalent group having the same structure as the C 3 -C 10 cycloalkenyl group.

如本文中使用的術語“C2 -C10 雜環烯基”指的是在其環中具有選自N、O、P、Si、Se、Ge、B、或S的至少一個雜原子作為成環原子、2-10個碳原子和至少一個雙鍵的單價單環基團。C1 -C10 雜環烯基的實例為2,3-二氫呋喃基和2,3-二氫噻吩基。如本文中使用的術語“C2 -C10 亞雜環烯基”指的是具有與C2 -C10 雜環烯基相同的結構的二價基團。The term "C 2 -C 10 heterocycloalkenyl" as used herein refers to having at least one heteroatom selected from N, O, P, Si, Se, Ge, B, or S in its ring as a component A monovalent monocyclic group with ring atoms, 2-10 carbon atoms and at least one double bond. Examples of C 1 -C 10 heterocycloalkenyl groups are 2,3-dihydrofuryl and 2,3-dihydrothienyl. The term "C 2 -C 10 heterocycloalkenylene" as used herein refers to a divalent group having the same structure as the C 2 -C 10 heterocycloalkenyl group.

如本文中使用的術語“C6 -C60 芳基”指的是具有擁有6-60個碳原子的碳環芳族體系的單價基團,且如本文中使用的術語“C6 -C60 亞芳基”指的是具有擁有6-60個碳原子的碳環芳族體系的二價基團。C6 -C60 芳基的非限制性實例包括苯基、萘基、蒽基、菲基、芘基和䓛基。當C6 -C60 芳基和C6 -C60 亞芳基各自包括兩個或更多個環時,所述環可彼此稠合。The term "C 6 -C 60 aryl group" as used herein refers to a monovalent group having a carbocyclic aromatic system having 6-60 carbon atoms, and the term "C 6 -C 60 "Arylene" refers to a divalent group having a carbocyclic aromatic system with 6-60 carbon atoms. Non-limiting examples of C 6 -C 60 aryl groups include phenyl, naphthyl, anthryl, phenanthryl, pyrenyl, and eryl. When the C 6 -C 60 aryl group and the C 6 -C 60 arylene group each include two or more rings, the rings may be fused to each other.

本文中使用的術語“C7 -C60 烷芳基”指的是被至少一個C1 -C54 烷基取代的C6 -C59 芳基。The term "C 7 -C 60 alkaryl" as used herein refers to a C 6 -C 59 aryl group substituted with at least one C 1 -C 54 alkyl group.

如本文中使用的術語“C1 -C60 雜芳基”指的是具有如下的環狀芳族體系的單價基團:所述環狀芳族體系具有選自N、O、P、Si、Se、Ge、B、或S的至少一個雜原子作為成環原子,且1-60個碳原子。如本文中使用的術語“C1 -C60 亞雜芳基”指的是具有如下的環狀芳族體系的二價基團:所述環狀芳族體系具有選自N、O、P、Si、Se、Ge、B、或S的至少一個雜原子作為成環原子,且1-60個碳原子。C1 -C60 雜芳基的實例包括吡啶基、嘧啶基、吡嗪基、噠嗪基、三嗪基、喹啉基和異喹啉基。當C6 -C60 雜芳基和C6 -C60 亞雜芳基各自包括兩個或更多個環時,所述環可彼此稠合。The term "C 1 -C 60 heteroaryl" as used herein refers to a monovalent group having a cyclic aromatic system selected from the group consisting of N, O, P, Si, At least one heteroatom of Se, Ge, B, or S serves as a ring-forming atom and has 1-60 carbon atoms. The term "C 1 -C 60 heteroarylene" as used herein refers to a divalent group having a cyclic aromatic system selected from N, O, P, At least one heteroatom of Si, Se, Ge, B, or S serves as a ring-forming atom and has 1-60 carbon atoms. Examples of C 1 -C 60 heteroaryl groups include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, and isoquinolinyl. When the C 6 -C 60 heteroaryl group and the C 6 -C 60 heteroarylene group each include two or more rings, the rings may be fused to each other.

本文中使用的術語“C2 -C60 烷基雜芳基”指的是被至少一個C1 -C59 烷基取代的C1 -C59 雜芳基。The term as used herein refers to a "C 2 -C 60 alkyl heteroaryl" is substituted with at least one C 1 -C 59 alkyl C 1 -C 59 heteroaryl group.

如本文中使用的術語“C6 -C60 芳氧基”表示-OA102 (其中 A102 為C6 -C60 芳基),且如本文中使用的術語“C6 -C60 芳硫基”表示-SA103 (其中 A103 為C6 -C60 芳基)。The term "C 6 -C 60 aryloxy" as used herein means -OA 102 (wherein A 102 is C 6 -C 60 aryl), and the term "C 6 -C 60 arylthio" as used herein "Means -SA 103 (where A 103 is a C 6 -C 60 aryl group).

如本文中使用的術語“單價非芳族稠合多環基團”指的是具有兩個或更多個彼此稠合的環,僅具有碳原子作為成環原子,並且在其整個分子結構方面不具有芳香性的單價基團(例如,具有8-60個碳原子)。單價非芳族稠合多環基團的實例包括芴基。如本文中使用的術語“二價非芳族稠合多環基團”指的是具有與單價非芳族稠合多環基團相同的結構的二價基團。The term "monovalent non-aromatic fused polycyclic group" as used herein refers to having two or more rings fused to each other, having only carbon atoms as ring-forming atoms, and in terms of its entire molecular structure A monovalent group that is not aromatic (for example, has 8-60 carbon atoms). Examples of the monovalent non-aromatic fused polycyclic group include a fluorenyl group. The term "divalent non-aromatic fused polycyclic group" as used herein refers to a divalent group having the same structure as the monovalent non-aromatic fused polycyclic group.

如本文中使用的術語“單價非芳族稠合雜多環基團”指的是具有兩個或更多個彼此稠合的環,除碳原子之外還具有選自N、O、P、Si、Se、Ge、B、或S的雜原子作為成環原子,並且在其整個分子結構方面不具有芳香性的單價基團(例如,具有2-60個碳原子)。單價非芳族稠合雜多環基團的非限制性實例包括哢唑基。如本文中使用的術語“二價非芳族稠合雜多環基團”指的是具有與單價非芳族稠合雜多環基團相同的結構的二價基團。As used herein, the term "monovalent non-aromatic fused heteropolycyclic group" refers to having two or more rings that are fused to each other, in addition to carbon atoms, which are selected from N, O, P, A heteroatom of Si, Se, Ge, B, or S serves as a ring-forming atom, and is a monovalent group that does not have aromaticity in its entire molecular structure (for example, has 2-60 carbon atoms). Non-limiting examples of monovalent non-aromatic fused heteropolycyclic groups include oxazolyl. The term "divalent non-aromatic fused heteropolycyclic group" as used herein refers to a divalent group having the same structure as the monovalent non-aromatic fused heteropolycyclic group.

取代的C5 -C30 碳環基團、取代的C1 -C30 雜環基團、取代的C1 -C60 烷基、取代的C2 -C60 烷基、取代的C2 -C60 烯基、取代的C2 -C60 炔基、取代的C1 -C60 烷氧基、取代的C3 -C10 環烷基、取代的C2 -C10 雜環烷基、取代的C3 -C10 環烯基、取代的C2 -C10 雜環烯基、取代的C6 -C60 芳基、取代的C7 -C60 烷芳基、取代的C6 -C60 芳氧基、取代的C6 -C60 芳硫基、取代的C1 -C60 雜芳基、取代的C2 -C60 烷基雜芳基、取代的單價非芳族稠合多環基團和取代的單價非芳族稠合雜多環基團的取代基可為: 氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基、或C1 -C60 烷氧基; 各自未被取代或被如下取代的C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基、或C1 -C60 烷氧基:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C7 -C60 烷芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、C2 -C60 烷基雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、-N(Q11 )(Q12 )、-Si(Q13 )(Q14 )(Q15 )、-Ge(Q13 )(Q14 )(Q15 )、-B(Q16 )(Q17 )、-P(=O)(Q18 )(Q19 )、-P(Q18 )(Q19 )、或其任意組合; 各自未被取代或被如下取代的C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C7 -C60 烷芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、C2 -C60 烷基雜芳基、單價非芳族稠合多環基團、或單價非芳族稠合雜多環基團:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基、C1 -C60 烷氧基、C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C7 -C60 烷芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、C2 -C60 烷基雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、-N(Q21 )(Q22 )、-Si(Q23 )(Q24 )(Q25 )、-Ge(Q23 )(Q24 )(Q25 )、-B(Q26 )(Q27 )、-P(=O)(Q28 )(Q29 )、-P(Q28 )(Q29 )、或其任意組合; -N(Q31 )(Q32 )、-Si(Q33 )(Q34 )(Q35 )、-Ge(Q33 )(Q34 )(Q35 )、-B(Q36 )(Q37 )、-P(=O)(Q38 )(Q39 )、或-P(Q38 )(Q39 );或 其任意組合。Substituted C 5 -C 30 carbocyclic group, substituted C 1 -C 30 heterocyclic group, substituted C 1 -C 60 alkyl, substituted C 2 -C 60 alkyl, substituted C 2 -C 60 alkenyl, substituted C 2 -C 60 alkynyl, substituted C 1 -C 60 alkoxy, substituted C 3 -C 10 cycloalkyl, substituted C 2 -C 10 heterocycloalkyl, substituted C 3 -C 10 cycloalkenyl, substituted C 2 -C 10 heterocycloalkenyl, substituted C 6 -C 60 aryl, substituted C 7 -C 60 alkaryl, substituted C 6 -C 60 aryl Oxy, substituted C 6 -C 60 arylthio group, substituted C 1 -C 60 heteroaryl group, substituted C 2 -C 60 alkyl heteroaryl group, substituted monovalent non-aromatic fused polycyclic group And the substituent of the substituted monovalent non-aromatic fused heteropolycyclic group can be: deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl group, or a C 1 -C 60 alkoxy; each unsubstituted or substituted with the following C 1 -C 60 alkyl , C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, or C 1 -C 60 alkoxy: deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, Phosphoric acid group or its salt, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 Aryl, C 7 -C 60 alkylaryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 1 -C 60 heteroaryl, C 2 -C 60 alkyl heteroaryl, Monovalent non-aromatic fused polycyclic group, monovalent non-aromatic fused heteropolycyclic group, -N(Q 11 )(Q 12 ), -Si(Q 13 )(Q 14 )(Q 15 ),- Ge(Q 13 )(Q 14 )(Q 15 ), -B(Q 16 )(Q 17 ), -P(=O)(Q 18 )(Q 19 ), -P(Q 18 )(Q 19 ) , Or any combination thereof; C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocyclic ring each unsubstituted or substituted as follows Alkenyl, C 6 -C 60 aryl, C 7 -C 60 alkaryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 1 -C 60 heteroaryl, C 2 -C 60 alkyl heteroaryl, monovalent non-aromatic Group fused polycyclic group, or monovalent non-aromatic fused heteropolycyclic group: deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt , C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 1 -C 60 alkoxy, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycle Alkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 7 -C 60 alkaryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 1 -C 60 heteroaryl, C 2 -C 60 alkyl heteroaryl, monovalent non-aromatic condensed polycyclic group, monovalent non-aromatic condensed heteropolycyclic group, -N(Q 21 )(Q 22 ), -Si(Q 23 )(Q 24 )(Q 25 ), -Ge(Q 23 )(Q 24 )(Q 25 ), -B(Q 26 )(Q 27 ), -P(=O)(Q 28 )(Q 29 ), -P(Q 28 )(Q 29 ), or any combination thereof; -N(Q 31 )(Q 32 ), -Si(Q 33 ) (Q 34 )(Q 35 ), -Ge(Q 33 )(Q 34 )(Q 35 ), -B(Q 36 )(Q 37 ), -P(=O)(Q 38 )(Q 39 ), Or -P(Q 38 )(Q 39 ); or any combination thereof.

在本說明書中,Q1 -Q9 、Q11 -Q19 、Q21 -Q29 和Q31 -Q39 可各自獨立地為氫;氘;-F;-Cl;-Br;-I;羥基;氰基;硝基;脒基;肼基;腙基;羧酸基團或其鹽;磺酸基團或其鹽;磷酸基團或其鹽;未經取代的或被氘、C1 -C60 烷基、C6 -C60 芳基、或其任意組合取代的C1 -C60 烷基;C2 -C60 烯基;C2 -C60 炔基;C1 -C60 烷氧基;C3 -C10 環烷基;C2 -C10 雜環烷基;C3 -C10 環烯基;C2 -C10 雜環烯基;未經取代的或被氘、C1 -C60 烷基、C6 -C60 芳基、或其任意組合取代的C6 -C60 芳基;C6 -C60 芳氧基;C6 -C60 芳硫基;C1 -C60 雜芳基;單價非芳族稠合多環基團;或單價非芳族稠合雜多環基團。In this specification, Q 1 -Q 9 , Q 11 -Q 19 , Q 21 -Q 29 and Q 31 -Q 39 may each independently be hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl ; Cyano group; nitro group; amidino group; hydrazine group; hydrazone group; carboxylic acid group or its salt; sulfonic acid group or its salt; phosphoric acid group or its salt; unsubstituted or deuterium, C 1- C 60 alkyl, C 6 -C 60 aryl, or C 1 -C 60 alkyl substituted by any combination thereof; C 2 -C 60 alkenyl; C 2 -C 60 alkynyl; C 1 -C 60 alkoxy C 3 -C 10 cycloalkyl; C 2 -C 10 heterocycloalkyl; C 3 -C 10 cycloalkenyl; C 2 -C 10 heterocycloalkenyl; unsubstituted or deuterated, C 1 -C 60 alkyl, C 6 -C 60 aryl, or C 6 -C 60 aryl substituted by any combination thereof; C 6 -C 60 aryloxy; C 6 -C 60 arylthio; C 1 -C 60 heteroaryl; monovalent non-aromatic fused polycyclic group; or monovalent non-aromatic fused heteropolycyclic group.

例如,在本說明書中,Q1 -Q9 、Q11 -Q19 、Q21 -Q29 和Q31 -Q39 可各自獨立地為: -CH3 、-CD3 、-CD2 H、-CDH2 、-CH2 CH3 、-CH2 CD3 、-CH2 CD2 H、-CH2 CDH2 、-CHDCH3 、-CHDCD2 H、-CHDCDH2 、-CHDCD3 、-CD2 CD3 、-CD2 CD2 H、或-CD2 CDH2 ;或 各自未被取代或被如下取代的正丙基、異丙基、正丁基、仲丁基、異丁基、叔丁基、正戊基、叔戊基、新戊基、異戊基、仲戊基、3-戊基、仲異戊基、苯基、聯苯基、或萘基:氘、C1 -C10 烷基、苯基、或其任意組合。For example, in this specification, Q 1 -Q 9 , Q 11 -Q 19 , Q 21 -Q 29 and Q 31 -Q 39 can each independently be: -CH 3 , -CD 3 , -CD 2 H,- CDH 2 , -CH 2 CH 3 , -CH 2 CD 3 , -CH 2 CD 2 H, -CH 2 CDH 2 , -CHDCH 3 , -CHDCD 2 H, -CHDCDH 2 , -CHDCD 3 , -CD 2 CD 3 , -CD 2 CD 2 H, or -CD 2 CDH 2 ; or each of n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-butyl, unsubstituted or substituted as follows Pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, phenyl, biphenyl, or naphthyl: deuterium, C 1 -C 10 alkyl, Phenyl, or any combination thereof.

如本文中使用的術語“含氘的C1 -C60 烷基(或者含氘的C1 -C20 烷基、含氘的C2 -C20 烷基等)”指的是被至少一個氘取代的C1 -C60 烷基(或者被至少一個氘取代的C1 -C20 烷基、被至少一個氘取代的C2 -C20 烷基等)。例如,如本文中使用的術語“含氘的C1 烷基(即,含氘的甲基)”包括-CD3 、-CD2 H和-CDH2As used herein, the term "deuterium-containing C 1 -C 60 alkyl group (or deuterium-containing C 1 -C 20 alkyl group, deuterium-containing C 2 -C 20 alkyl group, etc.)" refers to a deuterium-containing A substituted C 1 -C 60 alkyl group (or a C 1 -C 20 alkyl group substituted with at least one deuterium, a C 2 -C 20 alkyl group substituted with at least one deuterium, etc.). For example, the term "deuterium-containing C 1 alkyl (ie, deuterium-containing methyl)" as used herein includes -CD 3 , -CD 2 H, and -CDH 2 .

如本文中使用的術語“含氘的C3 -C10 環烷基”指的是被至少一個氘取代的C3 -C10 環烷基。“含氘的C3 -C10 環烷基”的實例包括例如式10-501。The term "deuterium-containing C 3 -C 10 cycloalkyl" as used herein refers to a C 3 -C 10 cycloalkyl substituted with at least one deuterium. Examples of "deuterium-containing C 3 -C 10 cycloalkyl" include, for example, Formula 10-501.

如本文中使用的術語“氟化C1 -C60 烷基(或氟化C1 -C20 烷基等)”、“氟化C3 -C10 環烷基”、或“氟化C2 -C10 雜環烷基”分別指的是被至少一個氟基團(-F)取代的C1 -C60 烷基(或C1 -C20 烷基等)、被至少一個氟基團(-F)取代的C3 -C10 環烷基和被至少一個氟基團(-F)取代的C2 -C10 雜環烷基。例如,術語“氟化C1 烷基(即,氟化甲基)”包括-CF3 、-CF2 H和-CFH2 。“氟化C1 -C60 烷基(或氟化C1 -C20 烷基等)”、“氟化C3 -C10 環烷基”、或“氟化C2 -C10 雜環烷基”可為i)其各自中所有的氫都被氟基團代替的完全氟化的C1 -C60 烷基(或完全氟化的C1 -C20 烷基等)、完全氟化的C3 -C10 環烷基、或完全氟化的C2 -C10 雜環烷基,或ii)其各自中的一些氫被氟基團代替的部分氟化的C1 -C60 烷基(或部分氟化的C1 -C20 烷基等)、部分氟化的C3 -C10 環烷基、或部分氟化的C2 -C10 雜環烷基。As used herein, the term "fluorinated C 1 -C 60 alkyl (or fluorinated C 1 -C 20 alkyl etc.)", "fluorinated C 3 -C 10 cycloalkyl", or "fluorinated C 2 -C 10 heterocycloalkyl" refers to a C 1 -C 60 alkyl group (or C 1 -C 20 alkyl group, etc.) substituted by at least one fluoro group (-F), and at least one fluoro group ( -F) A substituted C 3 -C 10 cycloalkyl group and a C 2 -C 10 heterocycloalkyl group substituted with at least one fluoro group (-F). For example, the term "fluorinated C 1 alkyl (ie, fluorinated methyl)" includes -CF 3 , -CF 2 H, and -CFH 2 . "Fluorinated C 1 -C 60 alkyl (or fluorinated C 1 -C 20 alkyl, etc.)", "fluorinated C 3 -C 10 cycloalkyl", or "fluorinated C 2 -C 10 heterocycloalkane The “group” can be i) a fully fluorinated C 1 -C 60 alkyl group (or a fully fluorinated C 1 -C 20 alkyl group, etc.), fully fluorinated C 1 -C 60 alkyl groups in which all hydrogens in each are replaced by fluorine groups C 3 -C 10 cycloalkyl group, or fully fluorinated C 2 -C 10 heterocycloalkyl group, or ii) partially fluorinated C 1 -C 60 alkyl group in which some of the hydrogens in each are replaced by fluorine groups (Or partially fluorinated C 1 -C 20 alkyl, etc.), partially fluorinated C 3 -C 10 cycloalkyl, or partially fluorinated C 2 -C 10 heterocycloalkyl.

如本文中使用的術語“(C1 -C20 烷基)‘X’基團”指的是被至少一個C1 -C20 烷基取代的‘X’基團。例如,如本文中使用的術語“(C1 -C20 烷基)C3 -C10 環烷基”指的是被至少一個C1 -C20 烷基取代的C3 -C10 環烷基,且如本文中使用的術語“(C1 -C20 烷基)苯基”指的是被至少一個C1 -C20 烷基取代的苯基。(C1 烷基)苯基的實例為甲苯基。The term "(C 1 -C 20 alkyl)'X'group" as used herein refers to an'X' group substituted with at least one C 1 -C 20 alkyl group. For example, the term "(C 1 -C 20 alkyl)C 3 -C 10 cycloalkyl" as used herein refers to a C 3 -C 10 cycloalkyl substituted with at least one C 1 -C 20 alkyl group , And the term "(C 1 -C 20 alkyl)phenyl" as used herein refers to a phenyl group substituted with at least one C 1 -C 20 alkyl group. An example of (C 1 alkyl)phenyl is tolyl.

術語“氮雜吲哚基團、氮雜苯並硼雜環戊二烯基團、氮雜苯並磷雜環戊二烯基團、氮雜茚基團、氮雜苯並噻咯基團、氮雜苯並鍺雜環戊二烯基團、氮雜苯並噻吩基團、氮雜苯並硒吩基團、氮雜苯並呋喃基團、氮雜哢唑基團、氮雜二苯並硼雜環戊二烯基團、氮雜二苯並磷雜環戊二烯基團、氮雜芴基團、氮雜二苯並噻咯基團、氮雜二苯並鍺雜環戊二烯基團、氮雜二苯並噻吩基團、氮雜二苯並硒吩基團、氮雜二苯並呋喃基團、氮雜二苯並噻吩5-氧化物基團、氮雜-9H-芴-9-酮基團和氮雜二苯並噻吩5,5-二氧化物基團”分別指的是其中構成環狀基團的碳原子的至少一個被氮代替的具有與“吲哚基團、苯並硼雜環戊二烯基團、苯並磷雜環戊二烯基團、茚基團、苯並噻咯基團、苯並鍺雜環戊二烯基團、苯並噻吩基團、苯並硒吩基團、苯並呋喃基團、哢唑基團、二苯並硼雜環戊二烯基團、二苯並磷雜環戊二烯基團、芴基團、二苯並噻咯基團、二苯並鍺雜環戊二烯基團、二苯並噻吩基團、二苯並硒吩基團、二苯並呋喃基團、二苯並噻吩5-氧化物基團、9H-芴-9-酮基團和二苯並噻吩5,5-二氧化物基團”相同的骨架的雜環基團。The term "azaindole group, azabenzoborole group, azabenzophosphoryl group, azaindene group, azabenzosilole group, Azabenzogermantocyclopentadiene group, azabenzothiophene group, azabenzoselenophene group, azabenzofuran group, azapyrazole group, azadibenzo Borocyclopentadiene group, azadibenzophosphorene group, azafluorene group, azadibenzosilole group, azadibenzogermantocyclopentadiene Group, azadibenzothiophene group, azadibenzoselenophene group, azadibenzofuran group, azadibenzothiophene 5-oxide group, aza-9H-fluorene The -9-ketone group and the azadibenzothiophene 5,5-dioxide group" respectively refer to those in which at least one of the carbon atoms constituting the cyclic group is replaced by nitrogen and has an "indole group , Benzoborole group, benzophosphoryl group, indene group, benzosilole group, benzogermantole group, benzothiophene group , Benzoselenophene group, benzofuran group, oxazole group, dibenzoborole group, dibenzophosphoryl group, fluorene group, dibenzo Silole group, dibenzogermanium cyclopentadiene group, dibenzothiophene group, dibenzoselenophene group, dibenzofuran group, dibenzothiophene 5-oxide group, 9H-fluorene-9-one group and dibenzothiophene 5,5-dioxide group" the same skeleton heterocyclic group.

在一種或多種實施方式中,式1中的由

Figure 02_image063
表示的基團可為由式CY1至CY88中的一者表示的基團:
Figure 02_image065
Figure 02_image067
Figure 02_image069
Figure 02_image071
Figure 02_image073
Figure 02_image075
Figure 02_image077
Figure 02_image079
Figure 02_image081
Figure 02_image083
在式CY1至CY88中, T4 -T8 可各自獨立地為: 氟基團(-F);或 各自未被取代或被如下取代的氟化C1 -C20 烷基、氟化C3 -C10 環烷基、或氟化C2 -C10 雜環烷基:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合; R2 、R5 -R8 和R1a 各自與以上描述的相同,並且R2 和R5 -R8 可不為氫, *表示與式1中的Ir的結合位點, *"表示與式1中的相鄰原子的結合位點。In one or more embodiments, the formula 1 in
Figure 02_image063
The represented group may be a group represented by one of formulas CY1 to CY88:
Figure 02_image065
Figure 02_image067
Figure 02_image069
Figure 02_image071
Figure 02_image073
Figure 02_image075
Figure 02_image077
Figure 02_image079
Figure 02_image081
Figure 02_image083
In formulas CY1 to CY88, T 4 -T 8 may each independently be: a fluorine group (-F); or a fluorinated C 1 -C 20 alkyl group, a fluorinated C 3 group that is unsubstituted or substituted as follows -C 10 cycloalkyl or fluorinated C 2 -C 10 heterocycloalkyl: deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or Any combination thereof; R 2 , R 5 -R 8 and R 1a are each the same as described above, and R 2 and R 5 -R 8 may not be hydrogen, * indicates the binding site with Ir in formula 1, *" It represents the binding site with the adjacent atom in Formula 1.

例如,式CY1至CY88中的R2 和R5 -R8 可各自獨立地為: 氘;或 各自未被取代或被如下取代的C1 -C20 烷基、C3 -C10 環烷基、或C2 -C10 雜環烷基:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。For example, R 2 and R 5 -R 8 in formulas CY1 to CY88 may each independently be: deuterium; or C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl each unsubstituted or substituted as follows , Or C 2 -C 10 heterocycloalkyl: deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof.

在一種或多種實施方式中,式1中的由

Figure 02_image085
表示的基團可為由式A(1)至A(7)之一表示的基團:
Figure 02_image087
在式A(1)至A(7)中, Y2 為C, X2 為O、S、N(R25 )、C(R25 )(R26 )、或Si(R25 )(R26 ), R9 -R12 和R21 -R26 各自與關於R20 描述的相同, *'表示與式1中的Ir的結合位點,且 *"表示與式1中的相鄰原子的結合位點。In one or more embodiments, the formula 1 in
Figure 02_image085
The represented group may be a group represented by one of formulas A(1) to A(7):
Figure 02_image087
In formulas A(1) to A(7), Y 2 is C, X 2 is O, S, N(R 25 ), C(R 25 )(R 26 ), or Si(R 25 )(R 26 ), R 9 -R 12 and R 21 -R 26 are each the same as described with respect to R 20 , *'represents a binding site with Ir in Formula 1, and *" represents a binding to adjacent atoms in Formula 1 Site.

例如,式A(1)中的R9 和R11 可各自獨立地為各自未被取代或被如下取代的C1 -C20 烷基、C3 -C10 環烷基、或C2 -C10 雜環烷基:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。For example, R 9 and R 11 in the formula A(1) may each independently be a C 1 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group, or a C 2 -C 10 heterocycloalkyl: deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof.

在一種或多種實施方式中,式A(1)中的R9 和R11 可各自獨立地為未經取代的或被氘、C1 -C20 烷基、或其任意組合取代的C1 -C20 烷基。In one or more embodiments, the Formula A R (1) 9 and R 11 may each independently be unsubstituted or deuterium, C 1 -C 20 alkyl group, or any combination of the substituted C 1 - C 20 alkyl.

在一種或多種實施方式中,式A(1)中的R10 和R12 可各自獨立地為氫或氘。In one or more embodiments, R 10 and R 12 in formula A(1) may each independently be hydrogen or deuterium.

在一種或多種實施方式中,式A(1)中的R9 和R11 可彼此相同。In one or more embodiments, R 9 and R 11 in formula A(1) may be the same as each other.

在一種或多種實施方式中,式A(1)中的R9 和R11 可彼此不同。In one or more embodiments, R 9 and R 11 in formula A(1) may be different from each other.

在一種或多種實施方式中,式A(1)中的R9 和R11 可彼此不同,並且R11 中包括的碳的數量可大於或等於R9 中包括的碳的數量。In one or more embodiments, R 9 and R 11 in Formula A(1) may be different from each other, and the number of carbons included in R 11 may be greater than or equal to the number of carbons included in R 9 .

在一種或多種實施方式中,i)式A(1)中的R9 -R12 的至少一個,ii)式A(2)和A(3)中的R21 -R26 之一、R11 、R12 、或其任意組合,iii)式A(4)和A(5)中的R21 -R26 之一、R9 、R12 、或其任意組合,以及iv)式A(6)和A(7)中的R21 -R26 之一、R9 、R10 、或其任意組合,可各自獨立地為各自未被取代或被如下取代的含氘的C1 -C20 烷基、含氘的C3 -C10 環烷基、或含氘的C2 -C10 雜環烷基:C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。In one or more embodiments, i) at least one of R 9 to R 12 in formula A(1), ii) one of R 21 to R 26 in formula A(2) and A(3), R 11 , R 12 , or any combination thereof, iii) one of R 21 -R 26 in formula A(4) and A(5), R 9 , R 12 , or any combination thereof, and iv) formula A(6) And one of R 21 to R 26 in A(7), R 9 , R 10 , or any combination thereof, each may independently be a deuterium-containing C 1 -C 20 alkyl group that is unsubstituted or substituted as follows , C 3 -C 10 cycloalkyl containing deuterium, or C 2 -C 10 heterocycloalkyl containing deuterium: C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 hetero Cycloalkyl, or any combination thereof.

在一種或多種實施方式中,式A(1)中的R9 和R11 的至少一個(例如,式A(1)中的R9 和R11 )可各自獨立地為各自未被取代或被如下取代的含氘的C1 -C20 烷基、含氘的C3 -C10 環烷基、或含氘的C2 -C10 雜環烷基:C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基、或其任意組合。In one or more embodiments, the Formula A R (1) 9 R 11 and at least one (e.g., of formula A R (1) 9 and R 11) may each independently be unsubstituted or substituted with Deuterium-containing C 1 -C 20 alkyl group, deuterium-containing C 3 -C 10 cycloalkyl group, or deuterium-containing C 2 -C 10 heterocycloalkyl group substituted as follows: C 1 -C 20 alkyl group, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof.

在一種或多種實施方式中,式1中的由

Figure 02_image085
表示的基團可為由式A(1)或A(5)表示的基團。In one or more embodiments, the formula 1 in
Figure 02_image085
The represented group may be a group represented by formula A(1) or A(5).

在一種或多種實施方式中,式1中的R14 和R16 可不為氫。In one or more embodiments, R 14 and R 16 in Formula 1 may not be hydrogen.

例如,式1中的R13 、R14 、R16 和R17 可不為氫。For example, R 13 , R 14 , R 16 and R 17 in Formula 1 may not be hydrogen.

在一種或多種實施方式中,式1中的R13 、R14 、R16 和R17 各自可包括至少一個碳。In one or more embodiments, each of R 13 , R 14 , R 16 and R 17 in Formula 1 may include at least one carbon.

在一種或多種實施方式中,在式1中,i) R13 和R17 可各自獨立地為氫或氘,且R14 和R16 可各自獨立地為未經取代的或被至少一個氘取代的C1 -C20 烷基。In one or more embodiments, in Formula 1, i) R 13 and R 17 may each independently be hydrogen or deuterium, and R 14 and R 16 may each independently be unsubstituted or substituted with at least one deuterium的 C 1 -C 20 alkyl group.

在一種或多種實施方式中,在式1中,i) R13 和R17 可各自獨立地為氫或氘,且R14 和R16 可各自獨立地為未經取代的或被至少一個氘取代的C2 -C20 烷基。In one or more embodiments, in Formula 1, i) R 13 and R 17 may each independently be hydrogen or deuterium, and R 14 and R 16 may each independently be unsubstituted or substituted with at least one deuterium的 C 2 -C 20 alkyl group.

在一種或多種實施方式中,式1中的R13 、R14 、R16 和R17 可各自獨立地為未經取代的或被至少一個氘取代的C1 -C20 烷基。In one or more embodiments, R 13 , R 14 , R 16 and R 17 in Formula 1 may each independently be a C 1 -C 20 alkyl group that is unsubstituted or substituted with at least one deuterium.

在一種或多種實施方式中,式1中的R13 、R14 、R16 和R17 可各自獨立地為未經取代的或被至少一個氘取代的C2 -C20 烷基。In one or more embodiments, R 13 , R 14 , R 16 and R 17 in Formula 1 may each independently be a C 2 -C 20 alkyl group that is unsubstituted or substituted with at least one deuterium.

在一種或多種實施方式中,式1中的由*-C(R13 )(R14 )(R19 )表示的基團中包括的碳的數量可為5或更多,和/或式1中的由*-C(R16 )(R17 )(R18 )表示的基團中包括的碳的數量可為5或更多。In one or more embodiments, the number of carbons included in the group represented by *-C(R 13 )(R 14 )(R 19 ) in Formula 1 may be 5 or more, and/or Formula 1. The number of carbons included in the group represented by *-C(R 16 )(R 17 )(R 18 ) in may be 5 or more.

在一種或多種實施方式中,式1中的由*-C(R13 )(R14 )(R19 )表示的基團的R13 、R14 和R19 可彼此連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團。即,式1中的由*-C(R13 )(R14 )(R19 )表示的基團可為未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團(例如,各自未被取代或被至少一個R1 a 取代的金剛烷基團、降冰片烯基團、二環[1.1.1]戊烷基團、二環[2.1.1]己烷基團、二環[2.2.1]庚烷基團(降莰烷基團)、二環[2.2.2]辛烷基團、環戊烷基團、環己烷基團、或環己烯基團)。In one or more embodiments, R 13 , R 14 and R 19 of the group represented by *-C(R 13 )(R 14 )(R 19 ) in Formula 1 may be connected to each other to form an unsubstituted at least one R 1a substituent or the C 5 -C 30 carbocyclic group, or an unsubstituted or substituted by at least one R 1a is C 1 -C 30 heterocyclic group. That is, the group represented by *-C(R 13 )(R 14 )(R 19 ) in Formula 1 may be an unsubstituted or C 5 -C 30 carbocyclic group substituted with at least one R 1a , Or unsubstituted or substituted with at least one R 1a C 1 -C 30 heterocyclic group (for example, each unsubstituted or substituted with at least one R 1 a adamantyl group, norbornene group, two Cyclo[1.1.1] pentane group, bicyclo[2.1.1] hexane group, bicyclo[2.2.1]heptan group (norbornane group), bicyclo[2.2.2]octane Alkyl group, cyclopentyl group, cyclohexane group, or cyclohexene group).

在一種或多種實施方式中,式1中的由*-C(R16 )(R17 )(R18 )表示的基團的R16 、R17 和R18 可彼此連接以形成未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團。即,式1中的由*-C(R16 )(R17 )(R18 )表示的基團可為未經取代的或被至少一個R1a 取代的C5 -C30 碳環基團、或者未經取代的或被至少一個R1a 取代的C1 -C30 雜環基團(例如,各自未被取代或被至少一個R1 a 取代的金剛烷基團、降冰片烯基團、二環[1.1.1]戊烷基團、二環[2.1.1]己烷基團、二環[2.2.1]庚烷基團(降莰烷基團)、二環[2.2.2]辛烷基團、環戊烷基團、環己烷基團、或環己烯基團)。In one or more embodiments, R 16 , R 17 and R 18 of the group represented by *-C(R 16 )(R 17 )(R 18 ) in Formula 1 may be connected to each other to form an unsubstituted at least one R 1a substituent or the C 5 -C 30 carbocyclic group, or an unsubstituted or substituted by at least one R 1a is C 1 -C 30 heterocyclic group. That is, the group represented by *-C(R 16 )(R 17 )(R 18 ) in Formula 1 may be an unsubstituted or C 5 -C 30 carbocyclic group substituted with at least one R 1a , Or unsubstituted or substituted with at least one R 1a C 1 -C 30 heterocyclic group (for example, each unsubstituted or substituted with at least one R 1 a adamantyl group, norbornene group, two Cyclo[1.1.1] pentane group, bicyclo[2.1.1] hexane group, bicyclo[2.2.1]heptan group (norbornane group), bicyclo[2.2.2]octane Alkyl group, cyclopentyl group, cyclohexane group, or cyclohexene group).

例如,所述有機金屬化合物可為下面的化合物1至38中的一者,但本揭露內容的實施方式不限於此。

Figure 02_image090
Figure 02_image092
Figure 02_image094
Figure 02_image096
Figure 02_image098
Figure 02_image100
化合物1至38中的TMS為三甲基甲矽烷基,且TMG為三甲基甲鍺烷基。For example, the organometallic compound may be one of the following compounds 1 to 38, but the embodiments of the present disclosure are not limited thereto.
Figure 02_image090
Figure 02_image092
Figure 02_image094
Figure 02_image096
Figure 02_image098
Figure 02_image100
TMS in compounds 1 to 38 is trimethylsilyl, and TMG is trimethylgermyl.

在由式1表示的有機金屬化合物中,1)環A1 (見式1')如在式1中所示地為其中兩個苯基團與一個吡啶基團稠合的稠環基團,且2) R1 -R8 的至少一個 包括至少一個氟基團(-F)。因此,所述有機金屬化合物的躍遷偶極矩可增加,並且所述有機金屬化合物的共軛長度相對增加且其結構剛性增加,從而導致非輻射躍遷的減少。因此,包括由式1表示的有機金屬化合物的電子器件例如有機發光器件可具有高的量子效率,且因此,可具有高的發光效率。 [式1']

Figure 02_image102
In the organometallic compound represented by Formula 1, 1) Ring A 1 (see Formula 1') is a condensed ring group in which two phenyl groups are fused with one pyridine group as shown in Formula 1, And 2) At least one of R 1 to R 8 includes at least one fluorine group (-F). Therefore, the transition dipole moment of the organometallic compound can be increased, and the conjugation length of the organometallic compound is relatively increased and the structural rigidity thereof is increased, resulting in a decrease in non-radiative transitions. Therefore, an electronic device including the organometallic compound represented by Formula 1, such as an organic light emitting device, may have high quantum efficiency, and therefore, may have high light emitting efficiency. [Formula 1']
Figure 02_image102

在一種或多種實施方式中,式1中的R18 和R19 可各自獨立地為經取代或未經取代的C2 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團、或者經取代或未經取代的單價非芳族稠合雜多環基團。因此,式1中的配體2(見式1')的給電子能力改善,且因此,式1中的配體1和配體2之間的相互作用可增強。因此,由式1表示的有機金屬化合物可具有改善的發光躍遷特性、改善的光學定向(取向)特性和改善的結構剛性。因此,包括由式1表示的有機金屬化合物的電子器件例如有機發光器件可具有高的發光效率和長的壽命。In one or more embodiments, R 18 and R 19 in Formula 1 may each independently be a substituted or unsubstituted C 2 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkene Group, substituted or unsubstituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, Substituted or unsubstituted C 2 -C 10 heterocycloalkyl, substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted C 2 -C 10 heterocycloalkenyl, A substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted A substituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic fused polycyclic group, or a substituted or unsubstituted monovalent non-aromatic fused heteropolycyclic group. Therefore, the electron donating ability of ligand 2 in Formula 1 (see Formula 1') is improved, and therefore, the interaction between ligand 1 and ligand 2 in Formula 1 can be enhanced. Therefore, the organometallic compound represented by Formula 1 may have improved light-emitting transition characteristics, improved optical orientation (orientation) characteristics, and improved structural rigidity. Therefore, an electronic device including the organometallic compound represented by Formula 1, such as an organic light emitting device, may have high luminous efficiency and long lifetime.

此外,由於由式1表示的有機金屬化合物中的R20 既不包括氟基團(-F)也不包括氰基,因此由式1表示的有機金屬化合物可發射具有高的色純度的光(例如,在光致發光光譜或電致發光光譜中具有相對窄的半寬度(FWHM)的光)。In addition, since R 20 in the organometallic compound represented by Formula 1 includes neither a fluorine group (-F) nor a cyano group, the organometallic compound represented by Formula 1 can emit light with high color purity ( For example, light having a relatively narrow half-width (FWHM) in the photoluminescence spectrum or the electroluminescence spectrum).

在一種或多種實施方式中,所述有機金屬化合物的光致發光光譜或電致發光光譜的發射峰的FWHM可為64 nm或更小。例如,所述有機金屬化合物的光致發光光譜或電致發光光譜的發射峰的FWHM可為約45 nm至約64 nm、約45 nm至約59 nm、約45 nm至約55 nm或約50 nm至約55 nm。In one or more embodiments, the FWHM of the emission peak of the photoluminescence spectrum or electroluminescence spectrum of the organometallic compound may be 64 nm or less. For example, the FWHM of the emission peak of the photoluminescence spectrum or electroluminescence spectrum of the organometallic compound may be about 45 nm to about 64 nm, about 45 nm to about 59 nm, about 45 nm to about 55 nm, or about 50 nm. nm to about 55 nm.

在一種或多種實施方式中,所述有機金屬化合物的光致發光光譜或電致發光光譜的發射峰的最大發射波長(發射峰值波長,λ最大 )可為約615 nm至約640 nm。在一種或多種實施方式中,所述有機金屬化合物的光致發光光譜或電致發光光譜的發射峰的最大發射波長(發射峰值波長,λ最大 )可為約615 nm至約630 nm或約620 nm至約630 nm。In one or more embodiments, the maximum emission wavelength of the organic metal compound or photoluminescence spectra electroluminescence emission peak of the emission spectrum (emission peak wavelength, [lambda] max) may be from about 615 nm to about 640 nm. In one or more embodiments, the maximum emission wavelength of the organic metal compound or photoluminescence spectra electroluminescence emission peak of the emission spectrum (emission peak wavelength, [lambda] max) may be from about 615 nm to about 630 nm, or about 620 nm to about 630 nm.

由式1表示的有機金屬化合物的躍遷偶極矩的水平定向率(orientation ratio)可為約90%至約100%。The horizontal orientation ratio of the transition dipole moment of the organometallic compound represented by Formula 1 may be about 90% to about 100%.

例如,所述有機金屬化合物的躍遷偶極矩的水平定向率可為例如約91%至約100%、約92%至約100%、約93%至約100%、約94%至約100%、約95%至約100%、約96%至約100%、約97%至約100%、約98%至約100%、約99%至約100%、或約100%。For example, the horizontal orientation rate of the transition dipole moment of the organometallic compound may be, for example, about 91% to about 100%, about 92% to about 100%, about 93% to about 100%, about 94% to about 100%. , About 95% to about 100%, about 96% to about 100%, about 97% to about 100%, about 98% to about 100%, about 99% to about 100%, or about 100%.

所述躍遷偶極矩的水平定向率可通過使用角度依賴性光致發光(PL)測量設備評價。所述角度依賴性PL測量設備可通過參照例如在韓國申請No. 2013-0150834中公開的角度依賴性PL測量設備的描述而理解。將韓國申請No. 2013-0150834引入本文中。The horizontal orientation rate of the transition dipole moment can be evaluated by using an angle-dependent photoluminescence (PL) measuring device. The angle-dependent PL measuring device can be understood by referring to the description of the angle-dependent PL measuring device disclosed in, for example, Korean Application No. 2013-0150834. Korean application No. 2013-0150834 is incorporated into this article.

如上所述,由於所述有機金屬化合物的躍遷偶極矩的水平定向率是高的,因此當包括所述有機金屬化合物的有機發光器件被驅動時,可與包括所述有機金屬化合物的膜基本上平行地發射電場,且因此,可減少由波導模式和/或表面電漿子極化(surface plasmon polariton)模式引起的光損失。由於通過這樣的機制(mechanism)發射光的電子器件的高的外部提取效率(即,從包括包含所述有機金屬化合物的膜(例如,將描述的發射層)的電子器件(例如,有機發光器件)提取光到外部的效率),包括所述有機金屬化合物的電子器件例如有機發光器件可具有高的發光效率。As described above, since the horizontal orientation rate of the transition dipole moment of the organometallic compound is high, when the organic light-emitting device including the organometallic compound is driven, it can be substantially different from the film including the organometallic compound. The electric field is emitted parallel to the upper side, and therefore, the light loss caused by the waveguide mode and/or the surface plasmon polariton mode can be reduced. Due to the high external extraction efficiency of electronic devices that emit light by such a mechanism (ie, from electronic devices (eg, organic light-emitting devices) that include a film containing the organometallic compound (eg, an emission layer that will be described) ) The efficiency of extracting light to the outside), electronic devices including the organometallic compound, such as organic light-emitting devices, may have high luminous efficiency.

膜中的由式1表示的有機金屬化合物的光致發光量子產率可為約90%至約100%。例如,膜中的所述有機金屬化合物的PLQY可為約91%至約100%、約92%至約100%、約93%至約100%、約94%至約100%、約95%至約100%、約96%至約100%、約97%至約100%、約98%至約100%、或約99%至約100%、或約100%。The photoluminescence quantum yield of the organometallic compound represented by Formula 1 in the film may be about 90% to about 100%. For example, the PLQY of the organometallic compound in the film may be about 91% to about 100%, about 92% to about 100%, about 93% to about 100%, about 94% to about 100%, about 95% to about 95%. About 100%, about 96% to about 100%, about 97% to about 100%, about 98% to about 100%, or about 99% to about 100%, or about 100%.

在一種或多種實施方式中,膜中的所述有機金屬化合物的PLQY可為約95%至約99%、約96%至約99%、約97%至約99%、或約98%至約99%。In one or more embodiments, the PLQY of the organometallic compound in the film may be about 95% to about 99%, about 96% to about 99%, about 97% to about 99%, or about 98% to about 99%.

測量膜中的PLQY的方法可通過參照評價實施例1而理解。The method of measuring PLQY in the film can be understood by referring to Evaluation Example 1.

由式1表示的有機金屬化合物的合成方法可由本領域普通技術人員通過參照下面提供的合成實施例而理解。The synthesis method of the organometallic compound represented by Formula 1 can be understood by those of ordinary skill in the art by referring to the synthesis examples provided below.

由式1表示的有機金屬化合物適於用在有機發光器件的有機層中,例如,適於用作所述有機層的發射層中的摻雜劑。因此,另一方面提供有機發光器件,其包括:第一電極;第二電極;以及設置在所述第一電極和所述第二電極之間並且包括發射層的有機層,其中所述有機層包括至少一種由式1表示的有機金屬化合物。The organometallic compound represented by Formula 1 is suitable for use in an organic layer of an organic light emitting device, for example, suitable for use as a dopant in an emission layer of the organic layer. Therefore, another aspect provides an organic light emitting device, which includes: a first electrode; a second electrode; and an organic layer disposed between the first electrode and the second electrode and including an emission layer, wherein the organic layer At least one organometallic compound represented by Formula 1 is included.

由於所述有機發光器件包括包含上述由式1表示的有機金屬化合物的有機層,因此在驅動電壓、外量子效率、電致發光(EL)光譜發射峰的相對窄的FWHM和壽命方面可獲得優異的特性。Since the organic light emitting device includes an organic layer including the organometallic compound represented by Formula 1, it is excellent in driving voltage, external quantum efficiency, relatively narrow FWHM of electroluminescence (EL) spectral emission peak, and lifetime. Characteristics.

式1的有機金屬化合物可用在有機發光器件的電極對之間。例如,由式1表示的有機金屬化合物可包括在所述發射層中。在這點上,所述有機金屬化合物可充當摻雜劑,且所述發射層可更包括主體(即,所述發射層中的由式1表示的有機金屬化合物的量小於所述主體的量)。The organometallic compound of Formula 1 may be used between a pair of electrodes of an organic light emitting device. For example, the organometallic compound represented by Formula 1 may be included in the emission layer. In this regard, the organometallic compound may act as a dopant, and the emission layer may further include a host (ie, the amount of the organometallic compound represented by Formula 1 in the emission layer is less than the amount of the host ).

在一種或多種實施方式中,所述發射層可發射紅色光。In one or more embodiments, the emission layer may emit red light.

本文中使用的表述“(有機層)包括至少一種有機金屬化合物”可包括其中“(有機層)包括相同的由式1表示的有機金屬化合物”的情況和其中“(有機層)包括兩種或更多種不同的由式1表示的有機金屬化合物”的情況。The expression "(organic layer) includes at least one organometallic compound" used herein may include the case where "(organic layer) includes the same organometallic compound represented by Formula 1" and where "(organic layer) includes two or There are more different organometallic compounds represented by Formula 1."

例如,所述有機層可包括僅化合物1作為所述有機金屬化合物。在這點上,化合物1可存在於所述有機發光器件的發射層中。在一種或多種實施方式中,所述有機層可包括化合物1和化合物2作為所述有機金屬化合物。在這點上,化合物1和化合物2可存在於相同的層中(例如,化合物1和化合物2全部可存在於發射層中)。For example, the organic layer may include only Compound 1 as the organometallic compound. In this regard, Compound 1 may be present in the emission layer of the organic light emitting device. In one or more embodiments, the organic layer may include compound 1 and compound 2 as the organometallic compound. In this regard, Compound 1 and Compound 2 may exist in the same layer (for example, both Compound 1 and Compound 2 may exist in the emission layer).

所述第一電極可為作為電洞注入電極的陽極,且所述第二電極可為作為電子注入電極的陰極,或者所述第一電極可為作為電子注入電極的陰極,且所述第二電極可為作為電洞注入電極的陽極。The first electrode may be an anode as a hole injection electrode, and the second electrode may be a cathode as an electron injection electrode, or the first electrode may be a cathode as an electron injection electrode, and the second electrode The electrode may be an anode as a hole injection electrode.

在一種或多種實施方式中,在所述有機發光器件中,所述第一電極為陽極,且所述第二電極為陰極,且所述有機層更包括在所述第一電極和所述發射層之間的電洞傳輸區域以及在所述發射層和所述第二電極之間的電子傳輸區域,且所述電洞傳輸區域包括電洞注入層、電洞傳輸層、電子阻擋層、或其任意組合,且所述電子傳輸區域包括電洞阻擋層、電子傳輸層、電子注入層、或其任意組合。In one or more embodiments, in the organic light-emitting device, the first electrode is an anode, and the second electrode is a cathode, and the organic layer is further included in the first electrode and the emitting device. The hole transport area between the layers and the electron transport area between the emission layer and the second electrode, and the hole transport area includes a hole injection layer, a hole transport layer, an electron blocking layer, or Any combination thereof, and the electron transport region includes a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

如本文中使用的術語“有機層”指的是在所述有機發光器件的第一電極和第二電極之間的單個層或多個層。除有機化合物之外,所述“有機層”還可包括包含金屬的有機金屬複合物。The term "organic layer" as used herein refers to a single layer or multiple layers between the first electrode and the second electrode of the organic light emitting device. In addition to organic compounds, the "organic layer" may also include organometallic composites containing metals.

圖1為根據一種實施方式的有機發光器件10的示意圖。下文中,將關於圖1描述根據實施方式的有機發光器件的結構和製造根據實施方式的有機發光器件的方法。有機發光器件10包括順序地堆疊的第一電極11、有機層15和第二電極19。FIG. 1 is a schematic diagram of an organic light emitting device 10 according to an embodiment. Hereinafter, the structure of the organic light emitting device according to the embodiment and the method of manufacturing the organic light emitting device according to the embodiment will be described with respect to FIG. 1. The organic light emitting device 10 includes a first electrode 11, an organic layer 15 and a second electrode 19 that are sequentially stacked.

可另外在第一電極11下面或在第二電極19上方設置基板。對於用作所述基板,可使用在通常的有機發光器件中使用的任何基板,並且所述基板可為各自具有優異的機械強度、熱穩定性、透明度、表面光滑度、易操作性和耐水性的玻璃基板或透明塑料基板。A substrate may be additionally provided below the first electrode 11 or above the second electrode 19. For use as the substrate, any substrate used in general organic light-emitting devices may be used, and the substrate may each have excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and water resistance. Glass substrate or transparent plastic substrate.

在一種或多種實施方式中,第一電極11可通過將用於形成第一電極11的材料沉積或濺射在所述基板上而形成。第一電極11可為陽極。用於形成第一電極11的材料可包括具有高的功函以促進電洞注入的材料。第一電極11可為反射性電極、半透射性電極或透射性電極。用於形成第一電極11的材料可為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化錫(SnO2 )或氧化鋅(ZnO)。在一種或多種實施方式中,用於形成第一電極11的材料可為金屬例如鎂(Mg)、鋁(Al)、鋁-鋰(Al-Li)、鈣(Ca)、鎂-銦(Mg-In)或鎂-銀(Mg-Ag)。In one or more embodiments, the first electrode 11 may be formed by depositing or sputtering a material for forming the first electrode 11 on the substrate. The first electrode 11 may be an anode. The material used to form the first electrode 11 may include a material having a high work function to promote hole injection. The first electrode 11 may be a reflective electrode, a semi-transmissive electrode or a transmissive electrode. The material used to form the first electrode 11 may be indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), or zinc oxide (ZnO). In one or more embodiments, the material used to form the first electrode 11 may be a metal such as magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg -In) or magnesium-silver (Mg-Ag).

第一電極11可具有單層結構或者包括兩個或更多個層的多層結構。例如,第一電極11可具有ITO/Ag/ITO的三層結構。The first electrode 11 may have a single-layer structure or a multilayer structure including two or more layers. For example, the first electrode 11 may have a three-layer structure of ITO/Ag/ITO.

有機層15位於第一電極11上。The organic layer 15 is located on the first electrode 11.

有機層15可包括電洞傳輸區域、發射層和電子傳輸區域。The organic layer 15 may include a hole transport area, an emission layer, and an electron transport area.

所述電洞傳輸區域可在第一電極11和所述發射層之間。The hole transmission region may be between the first electrode 11 and the emission layer.

所述電洞傳輸區域可包括電洞注入層、電洞傳輸層、電子阻擋層、緩衝層或其任意組合。The hole transport region may include a hole injection layer, a hole transport layer, an electron blocking layer, a buffer layer, or any combination thereof.

所述電洞傳輸區域可包括僅電洞注入層或電洞傳輸層。在一種或多種實施方式中,所述電洞傳輸區域可具有電洞注入層/電洞傳輸層結構或電洞注入層/電洞傳輸層/電子阻擋層結構,其從第一電極11起以該陳述的次序順序地堆疊。The hole transmission area may include only a hole injection layer or a hole transmission layer. In one or more embodiments, the hole transport region may have a hole injection layer/hole transport layer structure or a hole injection layer/hole transport layer/electron blocking layer structure, which starts from the first electrode 11 The order of the statements are stacked sequentially.

當所述電洞傳輸區域包括電洞注入層(HIL)時,所述電洞注入層可通過使用一種或多種合適的方法例如真空沉積、旋塗、流延和/或朗繆爾-布羅杰特(LB)沉積形成於第一電極11上。When the hole transport region includes a hole injection layer (HIL), the hole injection layer may be formed by using one or more suitable methods such as vacuum deposition, spin coating, casting, and/or Langmuir-Brow Jeter (LB) is deposited and formed on the first electrode 11.

當通過真空沉積形成電洞注入層時,沉積條件可根據用於形成所述電洞注入層的材料以及所述電洞注入層的結構和熱特性而改變。例如,沉積條件可包括約100℃至約500℃的沉積溫度、約10-8 托至約10-3 托的真空壓力以及約0.01Å/秒至約100Å/秒的沉積速率。然而,沉積條件不限於此,When the hole injection layer is formed by vacuum deposition, the deposition conditions may be changed according to the material used to form the hole injection layer and the structure and thermal characteristics of the hole injection layer. For example, the deposition conditions may include a deposition temperature of about 100°C to about 500°C, a vacuum pressure of about 10-8 Torr to about 10-3 Torr, and a deposition rate of about 0.01 Å/sec to about 100 Å/sec. However, the deposition conditions are not limited to this,

當使用旋塗形成所述電洞注入層時,塗覆條件可根據用於形成所述電洞注入層的材料以及所述電洞注入層的結構和熱性質而改變。例如,塗覆速度可為約2,000 rpm至約5,000 rpm,並且在塗覆之後進行熱處理以除去溶劑的溫度可為約80℃至約200℃。然而,塗覆條件不限於此。When spin coating is used to form the hole injection layer, coating conditions may vary according to the material used to form the hole injection layer and the structure and thermal properties of the hole injection layer. For example, the coating speed may be about 2,000 rpm to about 5,000 rpm, and the temperature at which heat treatment is performed to remove the solvent after coating may be about 80°C to about 200°C. However, the coating conditions are not limited to this.

通過參考用於形成所述電洞注入層的條件,可理解用於形成電洞傳輸層和電子阻擋層的條件。By referring to the conditions for forming the hole injection layer, the conditions for forming the hole transport layer and the electron blocking layer can be understood.

所述電洞傳輸區域可包括m-MTDATA、TDATA、2-TNATA、NPB、β-NPB、TPD、螺-TPD、螺-NPB、甲基化的NPB、TAPC、HMTPD、4,4',4''-三(N-哢唑基)三苯基胺(TCTA)、聚苯胺/十二烷基苯磺酸(PANI/DBSA)、聚(3,4-亞乙基二氧噻吩)/聚(4-磺苯乙烯) (PEDOT/PSS)、聚苯胺/樟腦磺酸(PANI/CSA)、聚苯胺/聚(4-磺苯乙烯) (PANI/PSS)、由下式201表示的化合物、由下式202表示的化合物、或其任意組合:

Figure 02_image104
Figure 02_image106
Figure 02_image108
Figure 02_image110
[式201]
Figure 02_image112
[式202]
Figure 02_image114
式201中的Ar101 和Ar102 可各自獨立地為各自未被取代或被如下取代的亞苯基、亞並環戊二烯基、亞茚基、亞萘基、亞薁基、亞庚搭烯基、亞苊基、亞芴基、亞非那烯基、亞菲基、亞蒽基、亞熒蒽基、亞苯並[9,10]菲基、亞芘基、亞䓛基、亞並四苯基、亞
Figure 02_image116
基、亞苝基、或亞並五苯基:氘、-F、-Cl、-Br、-I、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基、C1 -C60 烷氧基、C3 -C10 環烷基、C3 -C10 環烯基、C2 -C10 雜環烷基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、或其任意組合。The hole transmission region may include m-MTDATA, TDATA, 2-TNATA, NPB, β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4 ''-Tris(N-oxazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzene sulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly (4-sulfostyrene) (PEDOT/PSS), polyaniline/camphorsulfonic acid (PANI/CSA), polyaniline/poly(4-sulfostyrene) (PANI/PSS), a compound represented by the following formula 201, The compound represented by the following formula 202, or any combination thereof:
Figure 02_image104
Figure 02_image106
Figure 02_image108
Figure 02_image110
[Eq. 201]
Figure 02_image112
[Eq. 202]
Figure 02_image114
Ar 101 and Ar 102 in formula 201 may each independently be a phenylene group, a cyclopentadienylene group, an indenylene group, a naphthylene group, azulenylene group, and a heptylene group which are each unsubstituted or substituted as follows Alkenyl, acenaphthylene, fluorenylene, phenalenylene, phenanthrylene, anthracenylene, fluoranthene, benzo[9,10]phenanthrylene, pyrenylene, pyrene, sub Tetraphenyl, ethylene
Figure 02_image116
Group, perylene, or pentaphenyl: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group Or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 1 -C 60 alkoxy Group, C 3 -C 10 cycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 6 -C 60 aryloxy group, C 6 -C 60 arylthio group, C 1 -C 60 heteroaryl group, monovalent non-aromatic fused polycyclic group, monovalent non-aromatic fused heteropolycyclic group, or random combination.

式201中的符號xa和xb可各自獨立地為0-5的整數,或者0、1或2。例如,xa可為1且xb可為0,但xa和xb不限於此。The symbols xa and xb in formula 201 may each independently be an integer of 0-5, or 0, 1, or 2. For example, xa may be 1 and xb may be 0, but xa and xb are not limited thereto.

式201和202中的R101 -R108 、R111 -R119 和R121 -R124 可各自獨立地為: 氫、氘、-F、-Cl、-Br、-I、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C10 烷基(例如,甲基、乙基、丙基、丁基、戊基、或己基)、或C1 -C10 烷氧基(例如,甲氧基、乙氧基、丙氧基、丁氧基、或戊氧基); 各自未被取代或被如下取代的C1 -C10 烷基或C1 -C10 烷氧基:氘、-F、-Cl、-Br、-I、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、或其任意組合;或 各自未被取代或被如下取代的苯基、萘基、蒽基、芴基、或芘基:氘、-F、-Cl、-Br、-I、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C10 烷基、或C1 -C10 烷氧基、或其任意組合。R 101 -R 108 , R 111 -R 119 and R 121 -R 124 in formulas 201 and 202 may each independently be: hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, Nitro group, amino group, amidino group, hydrazine group, hydrazone group, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 10 alkyl (for example, methyl, Ethyl, propyl, butyl, pentyl, or hexyl), or C 1 -C 10 alkoxy (for example, methoxy, ethoxy, propoxy, butoxy, or pentoxy); C 1 -C 10 alkyl group or C 1 -C 10 alkoxy group each unsubstituted or substituted as follows: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amino, Amidino group, hydrazine group, hydrazone group, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, or any combination thereof; or each unsubstituted or substituted phenyl group, Naphthyl, anthracenyl, fluorenyl, or pyrenyl: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group Or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C 1 -C 10 alkyl group, or a C 1 -C 10 alkoxy group, or any combination thereof.

式201中的R109 可為各自未被取代或被如下取代的苯基、萘基、蒽基、或吡啶基:氘、-F、-Cl、-Br、-I、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C20 烷基、C1 -C20 烷氧基、苯基、萘基、蒽基、吡啶基、或其任意組合。R 109 in formula 201 can be phenyl, naphthyl, anthryl, or pyridyl, each unsubstituted or substituted by deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro Group, amino group, amidino group, hydrazine group, hydrazone group, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid group or its salt, C 1 -C 20 alkyl, C 1 -C 20 alkane Oxy, phenyl, naphthyl, anthryl, pyridyl, or any combination thereof.

在一種或多種實施方式中,由式201表示的化合物可由式201A表示: [式201A]

Figure 02_image118
式201A中的R101 、R111 、R112 和R109 可通過參照本文中提供的描述而理解。In one or more embodiments, the compound represented by Formula 201 may be represented by Formula 201A: [Formula 201A]
Figure 02_image118
R 101 , R 111 , R 112 and R 109 in Formula 201A can be understood by referring to the description provided herein.

例如,所述電洞傳輸區域可包括化合物HT1至HT21之一或其任意組合:

Figure 02_image120
Figure 02_image122
Figure 02_image124
Figure 02_image126
Figure 02_image128
所述電洞傳輸區域的厚度可在約100Å至約10,000Å、例如約100Å至約1,000Å的範圍內。當所述電洞傳輸區域包括電洞注入層、電洞傳輸層、或其組合時,所述電洞注入層的厚度可在約100Å至約10,000Å、例如約100Å至約1,000Å的範圍內,且所述電洞傳輸層的厚度可在約50Å至約2,000Å、例如約100Å至約1,500Å的範圍內。當所述電洞傳輸區域、電洞注入層和電洞傳輸層的厚度在這些範圍內時,可獲得令人滿意的電洞傳輸特性而沒有驅動電壓的顯著增加。For example, the hole transmission area may include one of compounds HT1 to HT21 or any combination thereof:
Figure 02_image120
Figure 02_image122
Figure 02_image124
Figure 02_image126
Figure 02_image128
The thickness of the hole transmission region may be in the range of about 100 Å to about 10,000 Å, for example, about 100 Å to about 1,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or a combination thereof, the thickness of the hole injection layer may be in the range of about 100Å to about 10,000Å, for example, about 100Å to about 1,000Å And the thickness of the hole transport layer may be in the range of about 50 Å to about 2,000 Å, for example, about 100 Å to about 1,500 Å. When the thickness of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transport characteristics can be obtained without a significant increase in driving voltage.

除了這些材料之外,所述電洞傳輸區域可更包括用於改善導電性質的電荷產生材料。所述電荷產生材料可均勻地或非均勻地分散在所述電洞傳輸區域中。In addition to these materials, the hole transport region may further include charge generation materials for improving conductivity. The charge generation material may be uniformly or non-uniformly dispersed in the hole transport region.

所述電荷產生材料可為例如p-摻雜劑。所述p-摻雜劑可為醌衍生物、金屬氧化物、包含氰基的化合物、或其任意組合,但是本揭露內容的實施方式不限於此。所述p-摻雜劑的實例為醌衍生物例如四氰基醌二甲烷(TCNQ)、2,3,5,6-四氟-四氰基-1,4-苯醌二甲烷(F4-TCNQ)、或F6-TCNNQ;金屬氧化物例如氧化鎢或氧化鉬;包含氰基的化合物例如下面的化合物HT-D1;或其任意組合。

Figure 02_image130
Figure 02_image132
The charge generating material may be, for example, a p-dopant. The p-dopant may be a quinone derivative, a metal oxide, a compound containing a cyano group, or any combination thereof, but the embodiments of the present disclosure are not limited thereto. Examples of the p-dopant are quinone derivatives such as tetracyanoquinodimethane (TCNQ), 2,3,5,6-tetrafluoro-tetracyano-1,4-benzoquinodimethane (F4- TCNQ), or F6-TCNNQ; metal oxides such as tungsten oxide or molybdenum oxide; compounds containing cyano groups such as the following compound HT-D1; or any combination thereof.
Figure 02_image130
Figure 02_image132

所述電洞傳輸區域可包括緩衝層。The hole transmission area may include a buffer layer.

而且,所述緩衝層可根據從所述發射層發射的光的波長補償光學共振(optical resonance)距離,並且因此,所形成的有機發光器件的效率可改善。Also, the buffer layer may compensate for an optical resonance distance according to the wavelength of light emitted from the emission layer, and therefore, the efficiency of the formed organic light emitting device may be improved.

同時,當所述電洞傳輸區域包括電子阻擋層時,用於所述電子阻擋層的材料可為以上描述的用於所述電洞傳輸區域的材料、將稍後說明的用於主體的材料、或其任意組合。然而,當所述電洞傳輸區域包括電子阻擋層時,用於所述電子阻擋層的材料可為將稍後描述的mCP、化合物HT21或其任意組合。Meanwhile, when the hole transport region includes an electron blocking layer, the material used for the electron blocking layer may be the material used for the hole transport region described above, the material used for the host, which will be described later , Or any combination thereof. However, when the hole transport region includes an electron blocking layer, the material used for the electron blocking layer may be mCP, compound HT21, or any combination thereof, which will be described later.

然後,可通過真空沉積、旋塗、流延、LB沉積等在所述電洞傳輸區域上形成發射層(EML)。當所述發射層通過真空沉積或旋塗而形成時,儘管沉積或塗覆條件可根據用於形成所述發射層的材料而改變,但是沉積或塗覆條件可與在形成所述電洞注入層時應用的那些類似。Then, an emission layer (EML) may be formed on the hole transport region by vacuum deposition, spin coating, casting, LB deposition, or the like. When the emissive layer is formed by vacuum deposition or spin coating, although the deposition or coating conditions may be changed according to the material used to form the emissive layer, the deposition or coating conditions may be the same as those used to form the hole injection Similar to those applied when layering.

所述發射層可包括主體和摻雜劑,並且所述摻雜劑可包括本文中描述的由式1表示的有機金屬化合物。The emission layer may include a host and a dopant, and the dopant may include the organometallic compound represented by Formula 1 described herein.

所述主體可包括TPBi、TBADN、ADN(也稱作“DNA”)、CBP、CDBP、TCP、mCP、化合物H50、化合物H51、化合物H52、或其任意組合:

Figure 02_image134
Figure 02_image136
Figure 02_image138
。The host may include TPBi, TBADN, ADN (also referred to as "DNA"), CBP, CDBP, TCP, mCP, compound H50, compound H51, compound H52, or any combination thereof:
Figure 02_image134
Figure 02_image136
Figure 02_image138
.

當所述有機發光器件為全色有機發光器件時,所述發射層可被圖案化為紅色發射層、綠色發射層和/或藍色發射層。在一種或多種實施方式中,由於包括紅色發射層、綠色發射層和/或藍色發射層的堆疊結構,所述發射層可發射白色光。When the organic light emitting device is a full-color organic light emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and/or a blue emission layer. In one or more embodiments, due to a stack structure including a red emission layer, a green emission layer, and/or a blue emission layer, the emission layer may emit white light.

當所述發射層包括主體和摻雜劑時,基於100重量份的所述主體,所述摻雜劑的量可在約0.01重量份至約15重量份的範圍內,但是本揭露內容的實施方式不限於此。When the emission layer includes a host and a dopant, based on 100 parts by weight of the host, the amount of the dopant may be in the range of about 0.01 parts by weight to about 15 parts by weight, but the implementation of the present disclosure The way is not limited to this.

所述發射層的厚度可在約100Å至約1,000Å、例如約200Å至約600Å的範圍內。當所述發射層的厚度在該範圍內時,可獲得優異的發光特性而沒有驅動電壓的顯著增加。The thickness of the emission layer may range from about 100 Å to about 1,000 Å, for example, from about 200 Å to about 600 Å. When the thickness of the emission layer is within this range, excellent light emission characteristics can be obtained without a significant increase in driving voltage.

然後,電子傳輸區域可位於所述發射層上。Then, the electron transport region may be located on the emission layer.

所述電子傳輸區域可包括電洞阻擋層、電子傳輸層、電子注入層或其任意組合。The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

例如,所述電子傳輸區域可具有電洞阻擋層/電子傳輸層/電子注入層結構或電子傳輸層/電子注入層結構,但所述電子傳輸區域的結構不限於此。所述電子傳輸層可具有包括兩種或更多種不同的材料的多層結構或單層結構。For example, the electron transport region may have a hole blocking layer/electron transport layer/electron injection layer structure or an electron transport layer/electron injection layer structure, but the structure of the electron transport region is not limited thereto. The electron transport layer may have a multilayer structure or a single layer structure including two or more different materials.

用於形成構成所述電子傳輸區域的電洞阻擋層、電子傳輸層和電子注入層的條件可通過參照用於形成所述電洞注入層的條件而理解。The conditions for forming the hole blocking layer, the electron transport layer, and the electron injection layer constituting the electron transport region can be understood by referring to the conditions for forming the hole injection layer.

當所述電子傳輸區域包括電洞阻擋層時,所述電洞阻擋層可包括例如BCP、Bphen和BAlq中的至少一種。

Figure 02_image140
When the electron transport region includes a hole blocking layer, the hole blocking layer may include, for example, at least one of BCP, Bphen, and BAlq.
Figure 02_image140

在一種或多種實施方式中,所述電洞阻擋層可包括所述主體、稍後將描述的用於形成電子傳輸層的材料、稍後將描述的用於形成電子注入層的材料、或其任意組合。In one or more embodiments, the hole blocking layer may include the host, a material for forming an electron transport layer to be described later, a material for forming an electron injection layer to be described later, or random combination.

所述電洞阻擋層的厚度可在約20Å至約1,000Å、例如約30Å至約600Å的範圍內。當所述電洞阻擋層的厚度在這些範圍內時,所述電洞阻擋層可具有優異的電洞阻擋特性而沒有驅動電壓的顯著增加。The thickness of the hole blocking layer may be in the range of about 20 Å to about 1,000 Å, for example, about 30 Å to about 600 Å. When the thickness of the hole blocking layer is within these ranges, the hole blocking layer may have excellent hole blocking characteristics without a significant increase in driving voltage.

所述電子傳輸層可包括BCP、Bphen、TPBi、Alq3 、BAlq、TAZ、NTAZ或其任意組合:

Figure 02_image142
The electron transport layer may include BCP, Bphen, TPBi, Alq 3 , BAlq, TAZ, NTAZ or any combination thereof:
Figure 02_image142

在一種或多種實施方式中,所述電子傳輸層可包括化合物ET1至ET25之一或其任意組合:

Figure 02_image144
Figure 02_image146
Figure 02_image148
Figure 02_image150
。In one or more embodiments, the electron transport layer may include one of compounds ET1 to ET25 or any combination thereof:
Figure 02_image144
Figure 02_image146
Figure 02_image148
Figure 02_image150
.

所述電子傳輸層的厚度可在約100Å至約1,000Å、例如約150Å至約500Å的範圍內。當所述電子傳輸層的厚度在以上描述的範圍內時,所述電子傳輸層可具有令人滿意的電子傳輸特性而沒有驅動電壓的顯著增加。The thickness of the electron transport layer may be in the range of about 100 Å to about 1,000 Å, for example, about 150 Å to about 500 Å. When the thickness of the electron transport layer is within the range described above, the electron transport layer may have satisfactory electron transport characteristics without a significant increase in driving voltage.

而且,除了以上描述的材料之外,所述電子傳輸層可更包括包含金屬的材料。Moreover, in addition to the materials described above, the electron transport layer may further include a material containing metal.

所述包含金屬的材料可包括Li複合物。所述Li複合物可包括例如化合物ET-D1或ET-D2。

Figure 02_image152
The metal-containing material may include Li composite. The Li complex may include, for example, the compound ET-D1 or ET-D2.
Figure 02_image152

所述電子傳輸區域可包括促進電子從第二電極19流入其中的電子注入層(EIL)。The electron transport region may include an electron injection layer (EIL) that facilitates the flow of electrons from the second electrode 19 therein.

所述電子注入層可包括LiF、NaCl、CsF、Li2 O、BaO或其任意組合。The electron injection layer may include LiF, NaCl, CsF, Li 2 O, BaO, or any combination thereof.

所述電子注入層的厚度可在約1Å至約100Å和例如約3Å至約90Å的範圍內。當所述電子注入層的厚度在以上描述的範圍內時,所述電子注入層可具有令人滿意的電子注入特性而沒有驅動電壓的顯著增加。The thickness of the electron injection layer may range from about 1 Å to about 100 Å and, for example, from about 3 Å to about 90 Å. When the thickness of the electron injection layer is within the above-described range, the electron injection layer may have satisfactory electron injection characteristics without a significant increase in driving voltage.

第二電極19可位於有機層15上。第二電極19可為陰極。用於形成第二電極19的材料可為具有相對低的功函的金屬、合金、導電化合物或其任意組合。例如,可使用鋰(Li)、鎂(Mg)、鋁(Al)、鋁-鋰(Al-Li)、鈣(Ca)、鎂-銦(Mg-In)或鎂-銀(Mg-Ag)作為用於形成第二電極19的材料。為了製造頂發射型發光器件,使用ITO或IZO形成的透射性電極可用作第二電極19。The second electrode 19 may be located on the organic layer 15. The second electrode 19 may be a cathode. The material used to form the second electrode 19 may be a metal, an alloy, a conductive compound, or any combination thereof having a relatively low work function. For example, lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In) or magnesium-silver (Mg-Ag) can be used As a material for forming the second electrode 19. In order to manufacture a top emission type light emitting device, a transmissive electrode formed using ITO or IZO may be used as the second electrode 19.

前文中,已經參照圖1描述了所述有機發光器件,但是本揭露內容的實施方式不限於此。In the foregoing, the organic light emitting device has been described with reference to FIG. 1, but the embodiments of the present disclosure are not limited thereto.

下文中,參照合成實施例和實施例詳細地描述根據實施方式的化合物和有機發光器件。然而,所述有機發光器件不限於此。在描述合成實施例時使用的措辭“使用B代替A”意味著就莫爾當量而言,所使用的B的量與所使用的A的量相同。實施例 Hereinafter, the compound and the organic light-emitting device according to the embodiment are described in detail with reference to synthesis examples and examples. However, the organic light emitting device is not limited thereto. The wording "use B instead of A" used in describing the synthesis examples means that the amount of B used is the same as the amount of A used in terms of Mohr equivalent. Example

合成實施例 1 (化合物 4

Figure 02_image154
中間物 L4-4 的合成 Synthesis Example 1 (Compound 4 )
Figure 02_image154
Synthesis of intermediate L4-4

將5 g (20.9 mmol) 2-氯-4-碘吡啶與50 ml無水THF混合,並且在-78℃的溫度下向其緩慢地逐滴添加12.5 ml (25 mmol) 2.0 M二異丙基氨基鋰(在THF中)。在約3小時之後,向其緩慢地逐滴添加2.5 ml (32 mmol)甲酸乙酯,然後,將所得混合物在室溫下攪拌18小時。向反應混合物添加水和乙酸乙酯以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥,繼之以在減壓下蒸餾和使用液相色譜法純化以獲得2.2 g (40%的產率)的中間物L4-4。 LC-MS m/z = 769.48 (M+H)+ 中間物 L4-3 的合成 Mix 5 g (20.9 mmol) of 2-chloro-4-iodopyridine with 50 ml of anhydrous THF, and slowly add 12.5 ml (25 mmol) of 2.0 M diisopropylamino to it at a temperature of -78°C Lithium (in THF). After about 3 hours, 2.5 ml (32 mmol) of ethyl formate was slowly added dropwise thereto, and then, the resulting mixture was stirred at room temperature for 18 hours. Water and ethyl acetate were added to the reaction mixture to extract the organic layer, and then the organic layer was dried by using magnesium sulfate, followed by distillation under reduced pressure and purification using liquid chromatography to obtain 2.2 g (40% of Yield) intermediate L4-4. LC-MS m/z = 769.48 (M+H) + Synthesis of intermediate L4-3

將1.9 g (7.2 mmol)中間物L4-4與60 ml乙腈和15 ml水混合,然後,向其添加0.4 g (0.5 mmol)PdCl2 (PPh3 )2 、1.0 g (7.2 mmol) 3-氟苯基硼酸和2.5 g (18.0 mmol)K2 CO3 ,然後,將混合物在80℃的溫度下在回流的同時加熱18小時。將反應混合物在減壓下濃縮,並且向其添加二氯甲烷和水以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥,繼之以在減壓下蒸餾和使用液相色譜法純化以獲得1.4 g (78%的產率)的中間物L4-3。 LC-MS m/z = 236(M+H)+ 中間物 L4-2 的合成 Mix 1.9 g (7.2 mmol) of intermediate L4-4 with 60 ml of acetonitrile and 15 ml of water, and then add 0.4 g (0.5 mmol) PdCl 2 (PPh 3 ) 2 , 1.0 g (7.2 mmol) 3-fluoro Phenylboronic acid and 2.5 g (18.0 mmol) K 2 CO 3 , and then, the mixture was heated while refluxing at a temperature of 80° C. for 18 hours. The reaction mixture was concentrated under reduced pressure, and dichloromethane and water were added thereto to extract the organic layer, and then the organic layer was dried by using magnesium sulfate, followed by distillation under reduced pressure and using liquid chromatography Purified to obtain 1.4 g (78% yield) of intermediate L4-3. LC-MS m/z = 236(M+H) + Synthesis of intermediate L4-2

將5.4 g (15.8 mmol)(甲氧基甲基)三苯基氯化鏻與50 ml無水乙醚混合,然後,向其逐滴添加16 ml 1.0 M叔丁醇鉀溶液(在THF中),並且將混合物在室溫下攪拌約1小時。之後,向其緩慢地逐滴添加與30 ml無水THF混合的1.5 g (6.3 mmol)中間物L4-3,並且將所得混合物在室溫下攪拌18小時。向反應混合物添加水和乙酸乙酯以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥,繼之以在減壓下蒸餾和使用液相色譜法純化以獲得1.6 g (95%的產率)的中間物L4-2。 LC-MS m/z = 264(M+H)+ 中間物 L4- 1 的合成 Mix 5.4 g (15.8 mmol) (methoxymethyl)triphenylphosphonium chloride with 50 ml of anhydrous ether, then add 16 ml of 1.0 M potassium tert-butoxide solution (in THF) to it dropwise, and The mixture was stirred at room temperature for about 1 hour. After that, 1.5 g (6.3 mmol) of Intermediate L4-3 mixed with 30 ml of anhydrous THF was slowly added dropwise thereto, and the resulting mixture was stirred at room temperature for 18 hours. Water and ethyl acetate were added to the reaction mixture to extract the organic layer, and then the organic layer was dried by using magnesium sulfate, followed by distillation under reduced pressure and purification using liquid chromatography to obtain 1.6 g (95% of Yield) of intermediate L4-2. Synthesis of LC-MS m / z = 264 (M + H) + Intermediate is L4- 1

將1.4 g (5.1 mmol)中間物L4-2與40 ml二氯甲烷混合,並且向其緩慢地逐滴添加3.0 ml甲磺酸,然後,將所得混合物在室溫下攪拌約18小時。向所述反應混合物添加飽和碳酸氫鈉水溶液以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥,繼之以在減壓下蒸餾和使用液相色譜法純化以獲得1.0 g (90%的產率)的中間物L4-1。 LC-MS m/z = 232(M+H)+ 中間物 L4 的合成 1.4 g (5.1 mmol) of Intermediate L4-2 was mixed with 40 ml of dichloromethane, and 3.0 ml of methanesulfonic acid was slowly added dropwise thereto, and then, the resulting mixture was stirred at room temperature for about 18 hours. A saturated aqueous sodium hydrogen carbonate solution was added to the reaction mixture to extract the organic layer, and then the organic layer was dried by using magnesium sulfate, followed by distillation under reduced pressure and purification using liquid chromatography to obtain 1.0 g (90 % Yield) of the intermediate L4-1. LC-MS m/z = 232(M+H) + synthesis of intermediate L4

將1.0 g (4.1 mmol)中間物L4-1與40 ml THF和10 ml水混合,向其添加0.9 g (6.2 mmol) 3,5-二甲基苯基硼酸、0.09 g (0.4 mmol) Pd(OAc)2 、0.35 g (0.82 mmol) Sphos和1.4 g (10.3 mmol) K2 CO3 ,並且將混合物在回流的同時加熱。向反應混合物添加乙酸乙酯和水以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥,繼之以在減壓下蒸餾和使用液相色譜法純化以獲得1.1 g (85%的產率)的中間物L4。 LC-MS m/z = 302(M+H)+ 中間物 L4 二聚體( L4 Dimer )的合成 1.0 g (4.1 mmol) intermediate L4-1 was mixed with 40 ml THF and 10 ml water, 0.9 g (6.2 mmol) 3,5-dimethylphenylboronic acid, 0.09 g (0.4 mmol) Pd( OAc) 2 , 0.35 g (0.82 mmol) Sphos, and 1.4 g (10.3 mmol) K 2 CO 3 , and the mixture was heated while refluxing. Ethyl acetate and water were added to the reaction mixture to extract the organic layer, and then the organic layer was dried by using magnesium sulfate, followed by distillation under reduced pressure and purification using liquid chromatography to obtain 1.1 g (85% of Yield) of intermediate L4. LC-MS m/z = 302(M+H) + Synthesis of intermediate L4 Dimer ( L4 Dimer )

將40 ml乙氧基乙醇和15 ml蒸餾水與1.05 g (3.4 mmol)中間物L4和0.6 g (1.6 mmol)氯化銥混合,然後,將混合物在回流的同時加熱24小時。將反應混合物的溫度降低至室溫以獲得固體產物,然後將所述固體產物依序過濾以及通過使用水、甲醇和己烷的順序洗滌。將所得固體在真空烘箱中乾燥以獲得1.1 g的中間物L4 Dimer。化合物 4 的合成 40 ml of ethoxyethanol and 15 ml of distilled water were mixed with 1.05 g (3.4 mmol) of intermediate L4 and 0.6 g (1.6 mmol) of iridium chloride, and then, the mixture was heated while refluxing for 24 hours. The temperature of the reaction mixture was lowered to room temperature to obtain a solid product, and then the solid product was filtered and washed sequentially by using water, methanol, and hexane. The resulting solid was dried in a vacuum oven to obtain 1.1 g of intermediate L4 Dimer. Synthesis of compound 4

將1.0 g (0.63 mmol)中間物L4 Dimer、0.9 g (4.5 mmol) 3,7-二乙基-3,7-二甲基壬烷-4,6-二酮和0.48 g (4.5 mmol)Na2 CO3 與40 ml乙氧基乙醇混合,然後,將混合物在90℃的溫度下攪拌24小時。將反應混合物冷卻至室溫以獲得固體產物,然後將所述固體產物過濾和通過液相色譜法純化以獲得1.0 g (80%的產率)的化合物4。 LC-MS m/z = 1035(M+H)+ Combine 1.0 g (0.63 mmol) intermediate L4 Dimer, 0.9 g (4.5 mmol) 3,7-diethyl-3,7-dimethylnonane-4,6-dione and 0.48 g (4.5 mmol) Na 2 CO 3 was mixed with 40 ml of ethoxyethanol, and then the mixture was stirred at 90°C for 24 hours. The reaction mixture was cooled to room temperature to obtain a solid product, which was then filtered and purified by liquid chromatography to obtain 1.0 g (80% yield) of Compound 4. LC-MS m/z = 1035(M+H) +

合成實施例 2 (化合物 1

Figure 02_image156
中間物 L1-2 的合成 Synthesis Example 2 (Compound 1 )
Figure 02_image156
Synthesis of intermediate L1-2

將6.0 g (23.7 mmol) 2-氯-4-碘-3-甲基吡啶與80 ml乙腈和20 ml水混合,然後,向其添加1.2 g (1.6 mmol) PdCl2 (PPh3 )2 、4.4 g (26.1 mmol) (3-氟-2-甲醯基苯基)硼酸和8.2 g(59.2 mmol) K2 CO3 ,並且將所得混合物在80℃的溫度下在回流的同時加熱18小時。將反應混合物在減壓下濃縮,並且向其添加乙酸乙酯和水以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥,繼之以在減壓下蒸餾和使用液相色譜法純化以獲得5.0 g(85%的產率)的中間物L1-2。 LC-MS m/z = 250(M+H)+ 中間物 L1-1 的合成 Mix 6.0 g (23.7 mmol) 2-chloro-4-iodo-3-methylpyridine with 80 ml acetonitrile and 20 ml water, and then add 1.2 g (1.6 mmol) PdCl 2 (PPh 3 ) 2 , 4.4 g (26.1 mmol) (3-fluoro-2-methanylphenyl)boronic acid and 8.2 g (59.2 mmol) K 2 CO 3 , and the resulting mixture was heated at a temperature of 80° C. while refluxing for 18 hours. The reaction mixture was concentrated under reduced pressure, and ethyl acetate and water were added thereto to extract the organic layer, and then the organic layer was dried by using magnesium sulfate, followed by distillation under reduced pressure and using liquid chromatography Purified to obtain 5.0 g (85% yield) of intermediate L1-2. LC-MS m/z = 250(M+H) + Synthesis of intermediate L1-1

將4.0 g (16.0 mmol)中間物L1-2溶解在150 ml無水N,N-二甲基甲醯胺中,然後,向其緩慢地逐滴添加19 ml (19.2 mmol)在THF中的1.0 M叔丁醇鉀溶液,然後,將反應混合物在80℃的溫度下加熱6小時。一旦反應完成,便向其添加乙酸乙酯和水以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥。將反應混合物過濾,在減壓下濃縮,然後,通過液相色譜法純化以獲得1.3 g (35%的產率)的中間物L1-1。 LC-MS m/z = 232(M+H)+ 中間物 L1 的合成 4.0 g (16.0 mmol) of intermediate L1-2 was dissolved in 150 ml of anhydrous N,N-dimethylformamide, and then, 19 ml (19.2 mmol) of 1.0 M in THF was slowly added dropwise to it Potassium tert-butoxide solution, then, the reaction mixture was heated at a temperature of 80°C for 6 hours. Once the reaction was completed, ethyl acetate and water were added thereto to extract the organic layer, and then the organic layer was dried by using magnesium sulfate. The reaction mixture was filtered, concentrated under reduced pressure, and then, purified by liquid chromatography to obtain 1.3 g (35% yield) of intermediate L1-1. LC-MS m/z = 232(M+H) + synthesis of intermediate L1

以與用於合成合成實施例1的中間物L4相同的方式製備1.4 g(85%的產率)的中間物L1,除了如下之外:使用中間物L1-1代替中間物L4-1。 LC-MS m/z = 303(M+H)+ 中間物 L1 Dimer 的合成 1.4 g (85% yield) of Intermediate L1 was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L1-1 was used instead of Intermediate L4-1. LC-MS m/z = 303(M+H) + Synthesis of intermediate L1 Dimer

以與用於合成合成實施例1的L4 Dimer相同的方式製備中間物L1 Dimer,除了如下之外:使用中間物L1代替中間物L4。化合物 1 的合成 The intermediate L1 Dimer was prepared in the same manner as the L4 Dimer used in the synthesis of Synthesis Example 1, except that the intermediate L1 was used instead of the intermediate L4. Synthesis of compound 1

以與用於合成合成實施例1的化合物4相同的方式製備0.6 g (47%的產率)的化合物1,除了如下之外:使用中間物L1 Dimer代替中間物L4 Dimer。 LC-MS m/z = 1035(M+H)+ 0.6 g (47% yield) of Compound 1 was prepared in the same manner as used for the synthesis of Compound 4 of Synthesis Example 1, except for the following: Intermediate L1 Dimer was used instead of Intermediate L4 Dimer. LC-MS m/z = 1035(M+H) +

合成實施例 3 (化合物 6

Figure 02_image158
中間物 L6-3 的合成 Synthesis Example 3 (Compound 6 )
Figure 02_image158
Synthesis of intermediate L6-3

以與用於合成合成實施例1的中間物L4-3相同的方式製備2.5 g (73%的產率)的中間物L6-3,除了如下之外:使用3-(三氟甲基)苯基硼酸代替3-氟苯基硼酸。 LC-MS m/z = 286(M+H)+ 中間物 L6-2 的合成 2.5 g (73% yield) of Intermediate L6-3 was prepared in the same manner as used for the synthesis of Intermediate L4-3 of Synthesis Example 1, except that: 3-(trifluoromethyl)benzene was used Boronic acid replaces 3-fluorophenylboronic acid. LC-MS m/z = 286(M+H) + Synthesis of intermediate L6-2

以與用於合成合成實施例1的中間物L4-2相同的方式製備2.7 g (99%的產率)的中間物L6-2,除了如下之外:使用中間物L6-3代替中間物L4-3。 LC-MS m/z = 314(M+H)+ 中間物 L6-1 的合成 2.7 g (99% yield) of Intermediate L6-2 was prepared in the same manner as used for the synthesis of Intermediate L4-2 of Synthesis Example 1, except for the following: Intermediate L6-3 was used instead of Intermediate L4 -3. LC-MS m/z = 314(M+H) + Synthesis of intermediate L6-1

以與用於合成合成實施例1的中間物L4-1相同的方式製備1.1 g (45%的產率)的中間物L6-1,除了如下之外:使用中間物L6-2代替中間物L4-2。 LC-MS m/z = 282(M+H)+ 中間物 L6 的合成 1.1 g (45% yield) of Intermediate L6-1 was prepared in the same manner as used for the synthesis of Intermediate L4-1 of Synthesis Example 1, except for the following: Intermediate L6-2 was used instead of Intermediate L4 -2. LC-MS m/z = 282(M+H) + synthesis of intermediate L6

以與用於合成合成實施例1的中間物L4相同的方式製備1.1 g的中間物L6 (80%的產率),除了如下之外:使用中間物L6-1代替中間物L4-1。 LC-MS m/z = 352(M+H)+ 中間物 L6 Dimer 的合成 1.1 g of Intermediate L6 (80% yield) was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L6-1 was used instead of Intermediate L4-1. LC-MS m/z = 352(M+H) + Synthesis of intermediate L6 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L6 Dimer,除了如下之外:使用中間物L6代替中間物L4。化合物 6 的合成 Intermediate L6 Dimer was prepared in the same manner as used to synthesize Intermediate L4 Dimer of Synthesis Example 1, except for the following: Intermediate L6 was used instead of Intermediate L4. Synthesis of compound 6

以與用於合成合成實施例1的化合物4相同的方式製備0.7 g (43%的產率)的化合物6,除了如下之外:分別使用中間物L6 Dimer和3,3,7,7-四甲基壬烷-4,6-二酮代替中間物L4 Dimer和3,7-二乙基-3,7-二甲基壬烷-4,6-二酮。 LC-MS m/z = 1107(M+H)+ 0.7 g (43% yield) of compound 6 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except for the following: intermediate L6 Dimer and 3,3,7,7-tetra Methylnonane-4,6-dione replaces the intermediate L4 Dimer and 3,7-diethyl-3,7-dimethylnonane-4,6-dione. LC-MS m/z = 1107(M+H) +

合成實施例 4 化合物 7

Figure 02_image160
中間物 L7-3 的合成 Synthesis Example 4 ( Compound 7 )
Figure 02_image160
Synthesis of intermediate L7-3

以與用於合成合成實施例1的中間物L4-3相同的方式製備1.8 g (70%的產率)的中間物L7-3,除了如下之外:使用3-(三氟甲基)-4-甲基苯基硼酸代替3-氟苯基硼酸。 LC-MS m/z = 300(M+H)+ 中間物 L7-2 的合成 1.8 g (70% yield) of Intermediate L7-3 was prepared in the same manner as used for the synthesis of Intermediate L4-3 of Synthesis Example 1, except for the following: 3-(trifluoromethyl)- 4-methylphenylboronic acid replaces 3-fluorophenylboronic acid. LC-MS m/z = 300(M+H) + Synthesis of intermediate L7-2

以與用於合成合成實施例1的中間物L4-2相同的方式製備1.8 g (95%的產率)的中間物L7-2,除了如下之外:使用中間物L7-3代替中間物L4-3。 LC-MS m/z = 328(M+H)+ 中間物 L7-1 的合成 1.8 g (95% yield) of Intermediate L7-2 was prepared in the same manner as used for the synthesis of Intermediate L4-2 of Synthesis Example 1, except for the following: Intermediate L7-3 was used instead of Intermediate L4 -3. LC-MS m/z = 328(M+H) + Synthesis of intermediate L7-1

以與用於合成合成實施例1的中間物L4-1相同的方式製備0.8 g (40%的產率)的中間物L7-1,除了如下之外:使用中間物L7-2代替中間物L4-2。 LC-MS m/z = 296(M+H)+ 中間物 L7 的合成 0.8 g (40% yield) of Intermediate L7-1 was prepared in the same manner as used for Synthesis of Intermediate L4-1 of Synthesis Example 1, except for the following: Intermediate L7-2 was used instead of Intermediate L4 -2. LC-MS m/z = 296(M+H) + Synthesis of intermediate L7

以與用於合成合成實施例1的中間物L4相同的方式製備0.8 g (90%的產率)的中間物L7,除了如下之外:使用中間物L7-1代替中間物L4-1。 LC-MS m/z = 366(M+H)+ 中間物 L7 Dimer 的合成 0.8 g (90% yield) of Intermediate L7 was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L7-1 was used instead of Intermediate L4-1. LC-MS m/z = 366(M+H) + Synthesis of intermediate L7 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L7 Dimer,除了如下之外:使用中間物L7代替中間物L4。化合物 7 的合成 Intermediate L7 Dimer was prepared in the same manner as used to synthesize Intermediate L4 Dimer of Synthesis Example 1, except for the following: Intermediate L7 was used instead of Intermediate L4. Synthesis of compound 7

以與用於合成合成實施例1的化合物4相同的方式製備0.6 g (46%的產率)的化合物7,除了如下之外:分別使用中間物L7 Dimer和3,7-二乙基壬烷-4,6-二酮代替中間物L4 Dimer和3,7-二乙基-3,7-二甲基壬烷-4,6-二酮。 LC-MS m/z = 1135(M+H)+ 0.6 g (46% yield) of compound 7 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except for the following: intermediate L7 Dimer and 3,7-diethylnonane were used, respectively -4,6-dione replaces the intermediate L4 Dimer and 3,7-diethyl-3,7-dimethylnonane-4,6-dione. LC-MS m/z = 1135(M+H) +

合成實施例 5 化合物 9

Figure 02_image162
中間物 L9-3 的合成 Synthesis Example 5 ( Compound 9 )
Figure 02_image162
Synthesis of intermediate L9-3

以與用於合成合成實施例1的中間物L4-3相同的方式製備2.1 g (80%的產率)的中間物L9-3,除了如下之外:使用3,5-二氟苯基硼酸代替3-氟苯基硼酸。 LC-MS m/z = 268(M+H)+ 中間物 L9-2 的合成 2.1 g (80% yield) of intermediate L9-3 was prepared in the same manner as used for the synthesis of intermediate L4-3 of Synthesis Example 1, except for the following: 3,5-difluorophenylboronic acid was used Instead of 3-fluorophenylboronic acid. LC-MS m/z = 268(M+H) + Synthesis of intermediate L9-2

以與用於合成合成實施例1的中間物L4-2相同的方式製備2.2 g (99%的產率)的中間物L9-2,除了如下之外:使用中間物L9-3代替中間物L4-3。 LC-MS m/z = 282(M+H)+ 中間物 L9-1 的合成 2.2 g (99% yield) of Intermediate L9-2 was prepared in the same manner as used for the synthesis of Intermediate L4-2 of Synthesis Example 1, except for the following: Intermediate L9-3 was used instead of Intermediate L4 -3. LC-MS m/z = 282(M+H) + Synthesis of intermediate L9-1

以與用於合成合成實施例1的中間物L4-1相同的方式製備0.8 g (40%的產率)的中間物L9-1,除了如下之外:使用中間物L9-2代替中間物L4-2。 LC-MS m/z = 250(M+H)+ 中間物 L9 的合成 0.8 g (40% yield) of Intermediate L9-1 was prepared in the same manner as used for the synthesis of Intermediate L4-1 of Synthesis Example 1, except for the following: Intermediate L9-2 was used instead of Intermediate L4 -2. LC-MS m/z = 250(M+H) + Synthesis of intermediate L9

以與用於合成合成實施例1的中間物L4相同的方式製備0.9 g的中間物L9 (87%的產率),除了如下之外:使用中間物L9-1代替中間物L4-1。 LC-MS m/z = 320(M+H)+ 中間物 L9 Dimer 的合成 0.9 g of Intermediate L9 (87% yield) was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L9-1 was used instead of Intermediate L4-1. LC-MS m/z = 320(M+H) + Synthesis of intermediate L9 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L9 Dimer,除了如下之外:使用中間物L9代替中間物L4。化合物 9 的合成 The intermediate L9 Dimer was prepared in the same manner as the intermediate L4 Dimer used to synthesize Synthesis Example 1, except that the intermediate L9 was used instead of the intermediate L4. Synthesis of compound 9

以與用於合成合成實施例1的化合物4相同的方式製備0.7 g (48%的產率)的化合物9,除了如下之外:分別使用中間物L9 Dimer和3,3,7,7-四甲基壬烷-4,6-二酮代替中間物L4 Dimer和3,7-二乙基-3,7-二甲基壬烷-4,6-二酮。 LC-MS m/z = 1043(M+H)+ 0.7 g (48% yield) of compound 9 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except for the following: intermediate L9 Dimer and 3,3,7,7-tetra Methylnonane-4,6-dione replaces the intermediate L4 Dimer and 3,7-diethyl-3,7-dimethylnonane-4,6-dione. LC-MS m/z = 1043(M+H) +

合成實施例 6 化合物 16

Figure 02_image164
中間物 L16-3 的合成 Synthesis Example 6 ( Compound 16 )
Figure 02_image164
Synthesis of intermediate L16-3

以與用於合成合成實施例1的中間物L4-3相同的方式製備2.5 g (72%的產率)的中間物L16-3,除了如下之外:使用2,5-二氟苯基硼酸代替3-氟苯基硼酸。 LC-MS m/z = 268(M+H)+ 中間物 L16-2 的合成 2.5 g (72% yield) of intermediate L16-3 was prepared in the same manner as used for the synthesis of intermediate L4-3 of Synthesis Example 1, except for the following: 2,5-difluorophenylboronic acid was used Instead of 3-fluorophenylboronic acid. LC-MS m/z = 268(M+H) + Synthesis of intermediate L16-2

以與用於合成合成實施例1的中間物L4-2相同的方式製備2.6 g (98%的產率)的中間物L16-2,除了如下之外:使用中間物L16-3代替中間物L4-3。 LC-MS m/z = 282(M+H)+ 中間物 L16-1 的合成 2.6 g (98% yield) of Intermediate L16-2 was prepared in the same manner as used for the synthesis of Intermediate L4-2 of Synthesis Example 1, except for the following: Intermediate L16-3 was used instead of Intermediate L4 -3. LC-MS m/z = 282(M+H) + Synthesis of intermediate L16-1

以與用於合成合成實施例1的中間物L4-1相同的方式製備0.9 g (38%的產率)中間物L16-1,除了如下之外:使用中間物L16-2代替中間物L4-2。 LC-MS m/z = 250(M+H)+ 中間物 L16 的合成 0.9 g (38% yield) of Intermediate L16-1 was prepared in the same manner as used for the synthesis of Intermediate L4-1 of Synthesis Example 1, except for the following: Intermediate L16-2 was used instead of Intermediate L4- 2. LC-MS m/z = 250(M+H) + Synthesis of intermediate L16

以與用於合成合成實施例1的中間物L4相同的方式製備0.8 g的中間物L16 (75%的產率),除了如下之外:使用中間物L16-1代替中間物L4-1。 LC-MS m/z = 320(M+H)+ 中間物 L16 Dimer 的合成 0.8 g of Intermediate L16 (75% yield) was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L16-1 was used instead of Intermediate L4-1. LC-MS m/z = 320(M+H) + Synthesis of intermediate L16 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L16 Dimer,除了如下之外:使用中間物L16代替中間物L4。化合物 16 的合成 The intermediate L16 Dimer was prepared in the same manner as the intermediate L4 Dimer used to synthesize Synthesis Example 1, except that the intermediate L16 was used instead of the intermediate L4. Synthesis of compound 16

以與用於合成合成實施例1的化合物4相同的方式製備0.6 g (40%的產率)的化合物16,除了如下之外:使用中間物L16 Dimer代替中間物L4 Dimer。 LC-MS m/z = 1071(M+H)+ 0.6 g (40% yield) of compound 16 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except that the intermediate L16 Dimer was used instead of the intermediate L4 Dimer. LC-MS m/z = 1071(M+H) +

合成實施例 7 (化合物 18

Figure 02_image166
中間物 L18-2 的合成 Synthesis Example 7 (Compound 18 )
Figure 02_image166
Synthesis of intermediate L18-2

以與用於合成合成實施例2的中間物L1-2相同的方式製備2.6 g (80%的產率)的中間物L18-2,除了如下之外:使用2-氟-6-(4,4,5,5-四甲基-1,3,2-二氧雜環戊硼烷-2-基)-3-(三甲基甲矽烷基)苯甲醛代替(3-氟-2-甲醯基苯基)硼酸。 LC-MS m/z = 322(M+H)+ 中間物 L18-1 的合成 2.6 g (80% yield) of Intermediate L18-2 was prepared in the same manner as used for the synthesis of Intermediate L1-2 of Synthesis Example 2, except for the following: 2-fluoro-6-(4, 4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-3-(trimethylsilyl)benzaldehyde instead of (3-fluoro-2-methyl Aminophenyl)boronic acid. LC-MS m/z = 322(M+H) + Synthesis of intermediate L18-1

以與用於合成合成實施例2的中間物L1-1相同的方式製備0.7 g (30%的產率)的中間物L18-1,除了如下之外:使用中間物L18-2代替中間物L1-2。 LC-MS m/z = 304(M+H)+ 中間物 L18 的合成 0.7 g (30% yield) of Intermediate L18-1 was prepared in the same manner as used for the synthesis of Intermediate L1-1 of Synthesis Example 2, except for the following: Intermediate L18-2 was used instead of Intermediate L1 -2. LC-MS m/z = 304(M+H) + synthesis of intermediate L18

以與用於合成合成實施例2的中間物L1相同的方式製備0.6 g (73%的產率)的中間物L18,除了如下之外:使用中間物L18-1代替中間物L1-1。 LC-MS m/z = 374(M+H)+ 中間物 L18 Dimer 的合成 0.6 g (73% yield) of Intermediate L18 was prepared in the same manner as used for the synthesis of Intermediate L1 of Synthesis Example 2, except for the following: Intermediate L18-1 was used instead of Intermediate L1-1. LC-MS m/z = 374(M+H) + Synthesis of intermediate L18 Dimer

以與用於合成合成實施例2的中間物L1 Dimer相同的方式製備中間物L18 Dimer,除了如下之外:使用中間物L18代替中間物L1。化合物 18 的合成 The intermediate L18 Dimer was prepared in the same manner as the intermediate L1 Dimer used to synthesize Synthesis Example 2, except that the intermediate L18 was used instead of the intermediate L1. Synthesis of compound 18

以與用於合成合成實施例2的化合物1相同的方式製備0.4 g (40%的產率)的化合物18,除了如下之外:使用中間物L18 Dimer代替中間物L1 Dimer。 LC-MS m/z = 1180(M+H)+ 0.4 g (40% yield) of Compound 18 was prepared in the same manner as used for the synthesis of Compound 1 of Synthesis Example 2, except for the following: Intermediate L18 Dimer was used instead of Intermediate L1 Dimer. LC-MS m/z = 1180(M+H) +

合成實施例 8 (化合物 23

Figure 02_image168
中間物 L23 的合成 Synthesis Example 8 (Compound 23 )
Figure 02_image168
Synthesis of intermediate L23

將1.2 g (3.7 mmol)中間物L9溶解在60 ml無水四氫呋喃(THF)中,然後,在-78℃的溫度下向其緩慢地添加2.4 ml (3.7 mmol)在己烷中的1.6 M BuLi溶液。在約一小時之後,向其緩慢地逐滴添加0.7 ml (5.6 mmol)三甲基氯鍺烷並且在室溫下攪拌18小時。一旦反應完成,便向其添加50 ml乙酸乙酯和飽和硫代硫酸鈉水溶液以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥並且在減壓下蒸餾。將粗產物通過液相色譜法純化以獲得1.2 g (76%的產率)的中間物L23。 LC-MS m/z = 438(M+H)+ 中間物 L23 Dimer 的合成 Dissolve 1.2 g (3.7 mmol) of intermediate L9 in 60 ml of anhydrous tetrahydrofuran (THF), and then slowly add 2.4 ml (3.7 mmol) of 1.6 M BuLi in hexane to it at a temperature of -78°C . After about one hour, 0.7 ml (5.6 mmol) trimethylchlorogermane was slowly added dropwise thereto and stirred at room temperature for 18 hours. Once the reaction was completed, 50 ml of ethyl acetate and saturated sodium thiosulfate aqueous solution were added thereto to extract the organic layer, and then the organic layer was dried by using magnesium sulfate and distilled under reduced pressure. The crude product was purified by liquid chromatography to obtain 1.2 g (76% yield) of intermediate L23. LC-MS m/z = 438(M+H) + Synthesis of intermediate L23 Dimer

以與用於合成合成實施例3的中間物L6 Dimer相同的方式製備中間物L23 Dimer,除了如下之外:使用中間物L23代替中間物L6。化合物 23 的合成 Intermediate L23 Dimer was prepared in the same manner as the intermediate L6 Dimer used to synthesize Synthesis Example 3, except for the following: Intermediate L23 was used instead of Intermediate L6. Synthesis of compound 23

以與用於合成合成實施例3的化合物6相同的方式製備0.8 g (45%的產率)的化合物23,除了如下之外:使用中間物L23 Dimer代替中間物L6 Dimer。 LC-MS m/z = 1279(M+H)+ 0.8 g (45% yield) of compound 23 was prepared in the same manner as used for the synthesis of compound 6 of Synthesis Example 3, except that the intermediate L23 Dimer was used instead of the intermediate L6 Dimer. LC-MS m/z = 1279(M+H) +

合成實施例 9 (化合物 28

Figure 02_image170
中間物 L28-6 的合成 Synthesis Example 9 (Compound 28 )
Figure 02_image170
Synthesis of intermediate L28-6

以與用於合成合成實施例1的中間物L4-3相同的方式製備6.2 g (71%的產率)的中間物L28-6,除了如下之外:使用(3-溴-5-(三氟甲基)苯基)硼酸代替3-氟苯基硼酸。 LC-MS m/z = 364(M+H)+ 中間物 L28-5 的合成 6.2 g (71% yield) of intermediate L28-6 was prepared in the same manner as used for the synthesis of intermediate L4-3 of Synthesis Example 1, except that (3-bromo-5-(三Fluoromethyl)phenyl)boronic acid replaces 3-fluorophenylboronic acid. LC-MS m/z = 364(M+H) + Synthesis of intermediate L28-5

以與用於合成合成實施例1的中間物L4-2相同的方式製備6.5 g (98%的產率)的中間物L28-5,除了如下之外:使用中間物L28-6代替中間物L4-3。 LC-MS m/z = 392(M+H)+ 中間物 L28-4 的合成 6.5 g (98% yield) of Intermediate L28-5 was prepared in the same manner as used for the synthesis of Intermediate L4-2 of Synthesis Example 1, except for the following: Intermediate L28-6 was used instead of Intermediate L4 -3. LC-MS m/z = 392(M+H) + Synthesis of intermediate L28-4

以與用於合成合成實施例1的中間物L4-1相同的方式製備2.1 g (35%的產率)的中間物L28-4,除了如下之外:使用中間物L28-5代替中間物L4-2。 LC-MS m/z = 360(M+H)+ 中間物 L28-3 的合成 2.1 g (35% yield) of Intermediate L28-4 was prepared in the same manner as used for the synthesis of Intermediate L4-1 of Synthesis Example 1, except for the following: Intermediate L28-5 was used instead of Intermediate L4 -2. LC-MS m/z = 360(M+H) + Synthesis of intermediate L28-3

將2.1 g (5.9 mmol)中間物L28-4與120 ml乙腈混合,然後,向其添加1.1 ml (8.9 mmol)三甲基氯矽烷和1.3 g (8.9 mmol) NaI,然後在90℃的溫度下在回流的同時加熱36小時。一旦反應完成,便向其添加60 ml乙酸乙酯和飽和硫代硫酸鈉水溶液以萃取有機層,然後將所述有機層通過使用硫酸鎂進行乾燥並且在減壓下蒸餾。將粗產物通過液相色譜法純化以獲得2.3 g (87%的產率)的中間物L28-3。 LC-MS m/z = 452(M+H)+ 中間物 L28-2 的合成 Mix 2.1 g (5.9 mmol) of the intermediate L28-4 with 120 ml of acetonitrile, and then add 1.1 ml (8.9 mmol) of trimethylchlorosilane and 1.3 g (8.9 mmol) of NaI to it, and then at a temperature of 90°C Heat for 36 hours while refluxing. Once the reaction was completed, 60 ml of ethyl acetate and saturated sodium thiosulfate aqueous solution were added thereto to extract the organic layer, and then the organic layer was dried by using magnesium sulfate and distilled under reduced pressure. The crude product was purified by liquid chromatography to obtain 2.3 g (87% yield) of intermediate L28-3. LC-MS m/z = 452(M+H) + Synthesis of intermediate L28-2

以與用於合成合成實施例1的中間物L4相同的方式製備1.8 g (80%的產率)中間物L28-2,除了如下之外:使用中間物L28-3代替中間物L4-1。 LC-MS m/z = 430(M+H)+ 中間物 L28-1 的合成 1.8 g (80% yield) of Intermediate L28-2 was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L28-3 was used instead of Intermediate L4-1. LC-MS m/z = 430(M+H) + Synthesis of intermediate L28-1

將1.8 g (4.2 mmol)中間物L28-2與60 ml四氫呋喃(THF)和15 ml水混合,然後,向其添加0.9 g (5.0 mmol) 4,4,5,5-四甲基-2-(丙-1-烯-2-基)-1,3,2-二氧雜環戊硼烷、0.1 g (0.4 mmol) Pd(OAc)2 、0.3 g (0.8 mmol) Sphos和1.5 g (10.5 mmol) K2 CO3 ,並且在80℃的溫度下在回流的同時加熱18小時。當反應完成時,將通過經由使用50 ml乙酸乙酯對反應混合物進行萃取過程而獲得的有機層通過使用硫酸鎂乾燥,在減壓下蒸餾,並且通過液相色譜法純化以獲得1.2 g (75%的產率)的中間物L28-1。 LC-MS m/z = 392(M+H)+ 中間物 L28 的合成 1.8 g (4.2 mmol) of intermediate L28-2 was mixed with 60 ml of tetrahydrofuran (THF) and 15 ml of water, and then 0.9 g (5.0 mmol) of 4,4,5,5-tetramethyl-2- (Pro-1-en-2-yl)-1,3,2-dioxolane, 0.1 g (0.4 mmol) Pd(OAc) 2 , 0.3 g (0.8 mmol) Sphos, and 1.5 g (10.5 mmol) K 2 CO 3 and heating while refluxing at a temperature of 80° C. for 18 hours. When the reaction was completed, the organic layer obtained by subjecting the reaction mixture to an extraction process by using 50 ml of ethyl acetate was dried by using magnesium sulfate, distilled under reduced pressure, and purified by liquid chromatography to obtain 1.2 g (75 % Yield) of the intermediate L28-1. LC-MS m/z = 392(M+H) + Synthesis of intermediate L28

將1.2 g (3.1mmol)中間物L28-1與60 ml乙醇混合,然後,向其添加0.1 g (10重量%)的Pd/C,並且向其中注入氫氣,繼之以在室溫下混合18小時。當反應完成時,容許反應混合物通過矽藻土墊,然後在減壓下濃縮,然後,通過液相色譜法純化以獲得1.1 g (90%的產率)的中間物L28。 LC-MS m/z = 394(M+H)+ 中間物 L28 Dimer 的合成 1.2 g (3.1 mmol) of intermediate L28-1 was mixed with 60 ml of ethanol, and then 0.1 g (10% by weight) of Pd/C was added thereto, and hydrogen was injected into it, followed by mixing at room temperature 18 hour. When the reaction was completed, the reaction mixture was allowed to pass through a pad of Celite, and then concentrated under reduced pressure, and then purified by liquid chromatography to obtain 1.1 g (90% yield) of intermediate L28. LC-MS m/z = 394(M+H) + Synthesis of intermediate L28 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L28 Dimer,除了如下之外:使用中間物L28代替中間物L4。化合物 28 的合成 The intermediate L28 Dimer was prepared in the same manner as the intermediate L4 Dimer used to synthesize Synthesis Example 1, except that the intermediate L28 was used instead of the intermediate L4. Synthesis of compound 28

以與用於合成合成實施例1的化合物4相同的方式製備0.6 g (38%的產率)的化合物28,除了如下之外:使用中間物L28 Dimer代替中間物L4 Dimer。 LC-MS m/z = 1219(M+H)+ 0.6 g (38% yield) of compound 28 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except that the intermediate L28 Dimer was used instead of the intermediate L4 Dimer. LC-MS m/z = 1219(M+H) +

合成實施例 10 化合物 20

Figure 02_image172
中間物 L20-3 的合成 Synthesis Example 10 ( Compound 20 )
Figure 02_image172
Synthesis of intermediate L20-3

以與用於合成合成實施例1的中間物L4-3相同的方式製備1.8 g (80%的產率)的中間物L20-3,除了如下之外:使用(3,5-二氟-4-甲基苯基)硼酸代替3-氟苯基硼酸。 LC-MS m/z = 268(M+H)+ 中間物 L20-2 的合成 1.8 g (80% yield) of Intermediate L20-3 was prepared in the same manner as used for the synthesis of Intermediate L4-3 of Synthesis Example 1, except for the following: (3,5-Difluoro-4 -Methylphenyl)boronic acid replaces 3-fluorophenylboronic acid. LC-MS m/z = 268(M+H) + Synthesis of intermediate L20-2

以與用於合成合成實施例1的中間物L4-2相同的方式製備1.9 g (97%的產率)的中間物L20-2,除了如下之外:使用中間物L20-3代替中間物L4-3。 LC-MS m/z = 296(M+H)+ 中間物 L20-1 的合成 1.9 g (97% yield) of Intermediate L20-2 was prepared in the same manner as used for the synthesis of Intermediate L4-2 of Synthesis Example 1, except for the following: Intermediate L20-3 was used instead of Intermediate L4 -3. LC-MS m/z = 296(M+H) + Synthesis of intermediate L20-1

以與用於合成合成實施例1的中間物L4-1相同的方式製備0.8 g (47%的產率)的中間物L20-1,除了如下之外:使用中間物L20-2代替中間物L4-2。 LC-MS m/z = 264(M+H)+ 中間物 L20 的合成 0.8 g (47% yield) of Intermediate L20-1 was prepared in the same manner as used for the synthesis of Intermediate L4-1 of Synthesis Example 1, except for the following: Intermediate L20-2 was used instead of Intermediate L4 -2. LC-MS m/z = 264(M+H) + synthesis of intermediate L20

以與用於合成合成實施例1的中間物L4相同的方式製備0.8 g (84%的產率)的中間物L20,除了如下之外:使用中間物L20-1代替中間物L4-1。 LC-MS m/z = 333(M+H)+ 中間物 L20 Dimer 的合成 0.8 g (84% yield) of Intermediate L20 was prepared in the same manner as used for the synthesis of Intermediate L4 of Synthesis Example 1, except for the following: Intermediate L20-1 was used instead of Intermediate L4-1. LC-MS m/z = 333(M+H) + Synthesis of intermediate L20 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L20 Dimer,除了如下之外:使用中間物L20代替中間物L4。化合物 20 的合成 Intermediate L20 Dimer was prepared in the same manner as the intermediate L4 Dimer used to synthesize Synthesis Example 1, except for the following: Intermediate L20 was used instead of Intermediate L4. Synthesis of compound 20

以與用於合成合成實施例1的化合物4相同的方式製備0.5 g (40%的產率)的化合物20,除了如下之外:使用中間物L20 Dimer代替中間物L4 Dimer。 LC-MS m/z = 1099(M+H)+ 0.5 g (40% yield) of compound 20 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except that the intermediate L20 Dimer was used instead of the intermediate L4 Dimer. LC-MS m/z = 1099(M+H) +

合成實施例 11 化合物 34

Figure 02_image174
中間物 L34 的合成 Synthesis Example 11 ( Compound 34 )
Figure 02_image174
Synthesis of intermediate L34

以與用於合成合成實施例2的中間物L1相同的方式製備1.0 g (78%的產率)的中間物L34,除了如下之外:使用(3,5-二(甲基-d3)苯基)硼酸代替3,5-二甲基苯基硼酸。 LC-MS m/z = 308(M+H)+ 中間物 L34 Dimer 的合成 1.0 g (78% yield) of Intermediate L34 was prepared in the same manner as used for the synthesis of Intermediate L1 of Synthesis Example 2, except for the following: (3,5-bis(methyl-d3)benzene was used) Yl)boronic acid instead of 3,5-dimethylphenylboronic acid. LC-MS m/z = 308(M+H) + Synthesis of intermediate L34 Dimer

以與用於合成合成實施例1的中間物L4 Dimer相同的方式製備中間物L34 Dimer,除了如下之外:使用中間物L34代替中間物L4。化合物 34 的合成 The intermediate L34 Dimer was prepared in the same manner as the intermediate L4 Dimer used in the synthesis of Synthesis Example 1, except that the intermediate L34 was used instead of the intermediate L4. Synthesis of compound 34

以與用於合成合成實施例1的化合物4相同的方式製備0.8 g (52%的產率)的化合物34,除了如下之外:使用中間物L34 Dimer代替中間物L4 Dimer。 LC-MS m/z = 1045(M+H)+ 評價實施例 1 :光致發光量子產率( PLQY 的評價 0.8 g (52% yield) of compound 34 was prepared in the same manner as used for the synthesis of compound 4 of Synthesis Example 1, except that the intermediate L34 Dimer was used instead of the intermediate L4 Dimer. LC-MS m / z = 1045 (M + H) + Evaluation Example 1: Evaluation of photoluminescence quantum yield (PLQY) of

將化合物H52和化合物4在10-7 托的真空壓力下和以98:2的重量比共沉積以製造40 nm厚的膜。Compound H52 and Compound 4 were co-deposited under a vacuum pressure of 10 -7 Torr and in a weight ratio of 98:2 to produce a 40 nm thick film.

通過使用裝備有氙燈光源、單色器、光子多通道分析儀和積分球並且使用PLQY測量軟件的Hamamatsu Photonics絕對PL量子產率測量系統 (Hamamatsu Photonics, Ltd.,Shizuoka,日本)評價在膜中的化合物4的PLQY。其結果顯示於表1中。Evaluate in the film by using a Hamamatsu Photonics absolute PL quantum yield measurement system (Hamamatsu Photonics, Ltd., Shizuoka, Japan) equipped with a xenon light source, a monochromator, a photon multichannel analyzer, and an integrating sphere and using PLQY measurement software PLQY of compound 4. The results are shown in Table 1.

測量化合物4、1、6、7、9、16、18、23、28、34、20、A1、B1和C1各自的PLQY,且其結果顯示於表1中。 [表1] 化合物編號 在膜中的PLQY(%) 4 99 1 99 6 99 7 98 9 99 16 97 18 97 23 98 28 99 34 99 20 99 A1 90 B1 88 C1 90

Figure 02_image176
Figure 02_image178
Figure 02_image180
Figure 02_image182
Figure 02_image184
The PLQY of each of compounds 4, 1, 6, 7, 9, 16, 18, 23, 28, 34, 20, A1, B1, and C1 were measured, and the results are shown in Table 1. [Table 1] Compound number PLQY in the film (%) 4 99 1 99 6 99 7 98 9 99 16 97 18 97 twenty three 98 28 99 34 99 20 99 A1 90 B1 88 C1 90
Figure 02_image176
Figure 02_image178
Figure 02_image180
Figure 02_image182
Figure 02_image184

由表1,確認化合物4、1、6、7、9、16、18、23、28、34和20顯示出比化合物A1、B1和C1好的PLQY特性。評價實施例 2 :水平定向率 ( 光學定向率 ) 的評價 From Table 1, it was confirmed that compounds 4, 1, 6, 7, 9, 16, 18, 23, 28, 34, and 20 showed better PLQY characteristics than compounds A1, B1, and C1. Evaluation Example 2: Evaluation of rate of horizontal orientation (optical orientation ratio)

在具有10-7 托的真空壓力的真空沉積設備中,將化合物H52和化合物4以98:2的重量比共沉積在熔融石英層(1 mm的厚度)上以形成40 nm厚的膜。然後,將所述膜在氮氣環境下用玻璃和膠水密封。In a vacuum deposition apparatus having a vacuum pressure of 10 -7 Torr, Compound H52 and Compound 4 were co-deposited on a fused silica layer (thickness of 1 mm) at a weight ratio of 98:2 to form a 40 nm thick film. Then, the film was sealed with glass and glue in a nitrogen environment.

同時,準備具有在韓國申請No. 2013-0150834的圖3中所示的結構的角度依賴性PL測量設備。具體規格如下: - 激發光波長:325 nm - 激發光源:He-Cd雷射器,Melles Griot, Inc. - 激發光輻照部件:光纖,1 mm的直徑,Thorlabs, Inc. - 半圓柱形棱鏡:熔融石英,100 mm的直徑,且30 mm的長度, - 發射光檢測部件:光電倍增管,Acton, Inc. - 安裝在發射光檢測部件上的偏振器:線偏振器,Thorlabs, Inc. - 記錄設備:SpectraSense,Acton, Inc. - 激發光入射角:θP = 45°,θH = 0° - 從樣品到發射光檢測部件的距離(或發射光檢測部件的行進路徑的半徑):900 mm 然後,將所述膜固定在所述半圓柱形透鏡上並且用325 nm雷射照射以發射光。將發射的光引導通過偏振膜並且通過使用電荷耦合器件(CCD)通過如下對於在90度到0度的光譜的最大波長處的光測量p-偏振光致發光強度:使其上固定有樣品的所述半圓柱形透鏡每次相對於所述透鏡的軸旋轉1度。At the same time, an angle-dependent PL measuring device having the structure shown in FIG. 3 of Korean Application No. 2013-0150834 is prepared. The specific specifications are as follows: -Excitation light wavelength: 325 nm -Excitation light source: He-Cd laser, Melles Griot, Inc. -Excitation light irradiation component: optical fiber, 1 mm diameter, Thorlabs, Inc. -Semi-cylindrical prism: fused silica, 100 mm diameter and 30 mm length, -Emission light detection component: photomultiplier tube, Acton, Inc. -Polarizer installed on the emitted light detection component: linear polarizer, Thorlabs, Inc. -Recording equipment: SpectraSense, Acton, Inc. -Incident angle of excitation light: θP = 45°, θH = 0° -The distance from the sample to the emission light detection part (or the radius of the travel path of the emission light detection part): 900 mm Then, the film was fixed on the semi-cylindrical lens and irradiated with a 325 nm laser to emit light. The emitted light is guided through a polarizing film and the p-polarized photoluminescence intensity is measured for light at the maximum wavelength of the spectrum from 90 degrees to 0 degrees by using a charge coupled device (CCD) as follows: The semi-cylindrical lens rotates 1 degree at a time with respect to the axis of the lens.

從0度到90度計算當各化合物具有垂直定向時顯示的p-偏振光致發光強度(第一p-偏振光致發光強度)和當各化合物具有水平定向時顯示的p-偏振光致發光強度(第二p-偏振光致發光強度)的每一個。確定這樣的加權值以測量表2中所示的化合物的水平定向率:通過將所述第一和第二p-偏振光致發光強度各自乘以所述加權值而獲得的p-偏振光致發光強度與所測量的p-偏振光致發光強度匹配。其結果顯示於表2中。在此情況下,使用其中來自激子的發射被視為從振蕩偶極子消耗的耗散能的經典偶極子模式分析角度依賴性光致發光光譜,以評價關於化合物4的水平定向率。Calculate the p-polarized photoluminescence intensity (first p-polarized photoluminescence intensity) displayed when each compound has a vertical orientation and the p-polarized photoluminescence intensity displayed when each compound has a horizontal orientation from 0 degrees to 90 degrees Each of the intensity (second p-polarized photoluminescence intensity). Such a weighted value was determined to measure the horizontal orientation ratio of the compound shown in Table 2: the p-polarized photoluminescence obtained by multiplying each of the first and second p-polarized photoluminescence intensities by the weighted value The luminous intensity matches the measured p-polarized photoluminescence intensity. The results are shown in Table 2. In this case, the angle-dependent photoluminescence spectrum was analyzed using a classic dipole mode in which emission from excitons were regarded as dissipation energy consumed from an oscillating dipole to evaluate the horizontal orientation rate with respect to compound 4.

測量化合物4、1、6、7、9、16、18、23、28、34、20、A1、B1和C1各自的水平定向率,並且其結果顯示於表2中。 [表2] 共沉積材料 水平定向率(光學定向率)(%) H52化合物4 (2重量%) 91 H52化合物1 (2重量%) 91 H52化合物6 (2重量%) 91 H52化合物7 (2重量%) 93 H52化合物9 (2重量%) 92 H52化合物16 (2重量%) 91 H52化合物18 (2重量%) 93 H52化合物23 (2重量%) 94 H52化合物28 (2重量%) 93 H52化合物34 (2重量%) 91 H52化合物20 (2重量%) 92 H52化合物A1 (2重量%) 83 H52化合物B1 (2重量%) 82 H52化合物C1 (2重量%) 88 The horizontal orientation rate of each of compounds 4, 1, 6, 7, 9, 16, 18, 23, 28, 34, 20, A1, B1, and C1 was measured, and the results are shown in Table 2. [Table 2] Co-deposition materials Horizontal orientation rate (optical orientation rate) (%) H52 compound 4 (2% by weight) 91 H52 compound 1 (2% by weight) 91 H52 compound 6 (2% by weight) 91 H52 compound 7 (2% by weight) 93 H52 compound 9 (2% by weight) 92 H52 compound 16 (2% by weight) 91 H52 Compound 18 (2% by weight) 93 H52 Compound 23 (2% by weight) 94 H52 compound 28 (2% by weight) 93 H52 compound 34 (2% by weight) 91 H52 compound 20 (2% by weight) 92 H52 compound A1 (2% by weight) 83 H52 compound B1 (2% by weight) 82 H52 compound C1 (2% by weight) 88

由表2,確認化合物4、1、6、7、9、16、18、23、28、34和20顯示出比化合物A1、B1和C1好的水平定向率特性。實施例 1 From Table 2, it was confirmed that compounds 4, 1, 6, 7, 9, 16, 18, 23, 28, 34, and 20 showed better horizontal orientation rate characteristics than compounds A1, B1, and C1. Example 1

將其上具有厚度為1500Å的ITO圖案作為陽極的玻璃基板切割成50 mm × 50 mm × 0.5 mm的尺寸,以異丙醇和純水超音波清潔,各自5分鐘,然後用紫外光照射30分鐘並且通過暴露於臭氧而進行清潔。然後,將所得基板安裝在真空沉積設備上。A glass substrate with an ITO pattern with a thickness of 1500Å as an anode was cut into a size of 50 mm × 50 mm × 0.5 mm, cleaned with isopropanol and pure water ultrasonic waves for 5 minutes each, and then irradiated with ultraviolet light for 30 minutes and Cleaning is done by exposure to ozone. Then, the resulting substrate was mounted on a vacuum deposition apparatus.

將HT3和F6-TCNNQ以98:2的重量比真空共沉積在所述ITO陽極上以形成具有100Å的厚度的電洞注入層,將HT3真空沉積在所述電洞注入層上以形成具有1350Å的厚度的電洞傳輸層,然後,將HT21真空沉積在所述電洞傳輸層上以形成具有300Å的厚度的電子阻擋層。HT3 and F6-TCNNQ were vacuum co-deposited on the ITO anode at a weight ratio of 98:2 to form a hole injection layer with a thickness of 100 Å, and HT3 was vacuum deposited on the hole injection layer to form a hole injection layer with a thickness of 1350 Å. Then, HT21 was vacuum deposited on the hole transport layer to form an electron blocking layer with a thickness of 300 Å.

然後,將H52(主體)和化合物4(摻雜劑)以98:2的重量比共沉積在所述電子阻擋層上以形成具有400Å的厚度的發射層。Then, H52 (host) and compound 4 (dopant) were co-deposited on the electron blocking layer in a weight ratio of 98:2 to form an emission layer having a thickness of 400 Å.

然後,將ET3和ET-D1以50:50的體積比共沉積在所述發射層上以形成具有350Å的厚度的電子傳輸層,且將ET-D1真空沉積在所述電子傳輸層上以形成具有10Å的厚度的電子注入層,並且將Al真空沉積在所述電子注入層上以形成具有1000Å的厚度的陰極,由此完成具有ITO (1500Å) / HT3+F6-TCNNQ (2重量%) (100Å) / HT3 (1350Å) / HT21 (300Å) / H52 +化合物4 (2重量%) (400Å) / ET3+ET-D1 (50%) (350Å) / ET-D1 (10Å) / Al(1000Å)的結構的有機發光器件的製造。

Figure 02_image186
實施例 2 11 和比較例 A1 C1 Then, ET3 and ET-D1 were co-deposited on the emission layer at a volume ratio of 50:50 to form an electron transport layer having a thickness of 350 Å, and ET-D1 was vacuum-deposited on the electron transport layer to form An electron injection layer having a thickness of 10Å, and Al was vacuum deposited on the electron injection layer to form a cathode having a thickness of 1000Å, thereby completing an ITO (1500Å) / HT3+F6-TCNNQ (2% by weight) ( 100Å) / HT3 (1350Å) / HT21 (300Å) / H52 + compound 4 (2wt%) (400Å) / ET3+ET-D1 (50%) (350Å) / ET-D1 (10Å) / Al(1000Å) Structure of organic light-emitting devices.
Figure 02_image186
Examples 2 to 11 and Comparative Examples A1 to C1

以與實施例1中相同的方式製造有機發光器件,除了如下之外:在形成發射層時,對於用作摻雜劑,使用表3中所示的相應化合物代替化合物4。評價實施例 3 :對有機發光器件的特性的評價 An organic light-emitting device was manufactured in the same manner as in Example 1, except for the following: when forming an emission layer, for use as a dopant, the corresponding compound shown in Table 3 was used instead of Compound 4. Evaluation Example 3 : Evaluation of characteristics of organic light-emitting devices

評價根據實施例1至11和比較例A1至C1製造的有機發光器件各自的驅動電壓、電流密度、最大外量子效率(Max EQE)、EL光譜的FWHM和最大發射波長(峰值發射波長)(λ最大 )以及壽命(LT97 )。其結果顯示於表3和4中。該評價是使用電流-電壓計(Keithley 2400)和亮度計(Minolta Cs-1,000A)進行的,並且對於各有機發光器件通過測量直至亮度降低至100%的初始亮度的97%時所消逝的時間的量而評價壽命(LT97 )(在3500尼特下),且其作為相對值(%)表示。 [表3]   發射層中的摻雜劑化合物編號 驅動電壓 (V) 電流密度 (mA/cm2 ) Max EQE (%) FWHM (nm) 實施例1 4 4.2 10 29 50 實施例2 1 4.2 10 29 50 實施例3 6 4.0 10 28 52 實施例4 7 4.0 10 30 52 實施例5 9 3.8 10 31 53 實施例6 16 4.1 10 30 52 實施例7 18 4.0 10 32 51 實施例8 23 3.9 10 31 50 實施例9 28 4.1 10 30 54 實施例10 34 4.2 10 29 49 實施例11 20 3.9 10 31 50 比較例A1 A1 4.5 10 25 76 比較例B1 B1 4.7 10 22 78 比較例C1 C1 4.4 10 24 65 [表4]   發射層中的摻雜劑化合物編號 λ最大 (nm) 壽命(LT97 ) (相對值,%) 實施例1 4 622 200 實施例2 1 622 185 實施例3 6 625 160 實施例4 7 623 180 實施例5 9 629 230 實施例6 16 622 150 實施例7 18 624 130 實施例8 23 627 140 實施例9 28 626 170 實施例10 34 622 300 實施例11 20 626 190 比較例A1 A1 614 90 比較例B1 B1 605 95 比較例C1 C1 631 70

Figure 02_image188
Figure 02_image190
Figure 02_image180
Figure 02_image182
Evaluation of the driving voltage, current density, maximum external quantum efficiency (Max EQE), FWHM of the EL spectrum, and maximum emission wavelength (peak emission wavelength) (λ) of the organic light-emitting devices manufactured according to Examples 1 to 11 and Comparative Examples A1 to C1, respectively Maximum ) and life (LT 97 ). The results are shown in Tables 3 and 4. The evaluation was performed using a current-voltage meter (Keithley 2400) and a luminance meter (Minolta Cs-1,000A), and for each organic light-emitting device, the elapsed time was measured until the luminance was reduced to 97% of the initial luminance at 100% The lifetime (LT 97 ) (under 3500 nits) was evaluated by the amount of, and it was expressed as a relative value (%). [table 3] Dopant compound number in the emission layer Drive voltage (V) Current density (mA/cm 2 ) Max EQE (%) FWHM (nm) Example 1 4 4.2 10 29 50 Example 2 1 4.2 10 29 50 Example 3 6 4.0 10 28 52 Example 4 7 4.0 10 30 52 Example 5 9 3.8 10 31 53 Example 6 16 4.1 10 30 52 Example 7 18 4.0 10 32 51 Example 8 twenty three 3.9 10 31 50 Example 9 28 4.1 10 30 54 Example 10 34 4.2 10 29 49 Example 11 20 3.9 10 31 50 Comparative example A1 A1 4.5 10 25 76 Comparative example B1 B1 4.7 10 twenty two 78 Comparative example C1 C1 4.4 10 twenty four 65 [Table 4] Dopant compound number in the emission layer λ max (nm) Life (LT 97 ) (relative value, %) Example 1 4 622 200 Example 2 1 622 185 Example 3 6 625 160 Example 4 7 623 180 Example 5 9 629 230 Example 6 16 622 150 Example 7 18 624 130 Example 8 twenty three 627 140 Example 9 28 626 170 Example 10 34 622 300 Example 11 20 626 190 Comparative example A1 A1 614 90 Comparative example B1 B1 605 95 Comparative example C1 C1 631 70
Figure 02_image188
Figure 02_image190
Figure 02_image180
Figure 02_image182

參照表3和4,從實施例1至11的有機發光器件發射的光的FWHM顯著小於從比較例A1至C1的有機發光器件發射的光的FWHM。因此,確認實施例1至11的有機發光器件具有比比較例A1至C1的有機發光器件高的色純度水平。確認實施例1至11的有機發光器件與比較例A1至C1的有機發光器件相比在驅動電壓、外量子效率和壽命方面具有改善的特性。Referring to Tables 3 and 4, the FWHM of light emitted from the organic light emitting devices of Examples 1 to 11 is significantly smaller than the FWHM of light emitted from the organic light emitting devices of Comparative Examples A1 to C1. Therefore, it was confirmed that the organic light-emitting devices of Examples 1 to 11 had a higher color purity level than the organic light-emitting devices of Comparative Examples A1 to C1. It was confirmed that the organic light-emitting devices of Examples 1 to 11 had improved characteristics in terms of driving voltage, external quantum efficiency, and lifetime compared with the organic light-emitting devices of Comparative Examples A1 to C1.

根據本揭露內容的實施方式的有機金屬化合物在量子發光效率和水平定向率方面具有優異的特性。因此,包括所述有機金屬化合物的有機發光器件的電致發光光譜的發射峰具有相對窄的FWHM,並且包括所述有機金屬化合物的有機發光器件可具有優異的外量子效率和壽命特性。The organometallic compound according to the embodiment of the present disclosure has excellent characteristics in terms of quantum luminous efficiency and horizontal orientation rate. Therefore, the emission peak of the electroluminescence spectrum of the organic light emitting device including the organometallic compound has a relatively narrow FWHM, and the organic light emitting device including the organometallic compound may have excellent external quantum efficiency and lifetime characteristics.

應理解,本文中描述的實施方式應僅在描述的意義上考慮且不用於限制的目的。在各實施方式中的特徵或方面的描述應典型地被認為可用於其它實施方式中的其它類似特徵或方面。儘管已經參照附圖描述了一種或多種實施方式,但是本領域技術人員將理解,在不背離如由所附申請專利範圍所限定的精神和範圍的情況下,可在其中進行形式和細節方面的多種變化。It should be understood that the embodiments described herein should only be considered in a descriptive sense and not for the purpose of limitation. Descriptions of features or aspects in each embodiment should typically be considered as available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that, without departing from the spirit and scope as defined by the scope of the appended application, modifications in form and detail can be made therein Many changes.

10:有機發光器件 11:第一電極 15:有機層 19:第二電極10: Organic light-emitting devices 11: First electrode 15: Organic layer 19: second electrode

由結合圖1考慮的實施方式的以下描述,這些和/或其它方面將變得明晰和更容易理解, 圖1為根據實施方式的有機發光器件的示意性橫截面圖。These and/or other aspects will become clearer and easier to understand from the following description of the embodiment considered in conjunction with FIG. 1, FIG. 1 is a schematic cross-sectional view of an organic light emitting device according to an embodiment.

Figure 108147808-A0101-11-0002-3
Figure 108147808-A0101-11-0002-3

10:有機發光器件 10: Organic light-emitting devices

11:第一電極 11: First electrode

15:有機層 15: Organic layer

19:第二電極 19: second electrode

Claims (20)

有機金屬化合物,由式1表示: [式1]
Figure 03_image001
其中,在式1中, Y2 為C, 環A2 為C5 -C30 碳環基團或C1 -C30 雜環基團, R1 -R8 、R13 -R17 和R20 各自獨立地為氫、氘、-F、-Cl、-Br、-I、-SF5 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、經取代或未經取代的C1 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團、經取代或未經取代的單價非芳族稠合雜多環基團、-N(Q1 )(Q2 )、-Si(Q3 )(Q4 )(Q5 )、-Ge(Q3 )(Q4 )(Q5 )、-B(Q6 )(Q7 )、-P(=O)(Q8 )(Q9 )或-P(Q8 )(Q9 ), 條件是i) R1 -R8 中的至少一個包括至少一個氟基團(-F);以及ii) R20 既不包括氟基團(-F)也不包括氰基, d2為0至10的整數,且當d2為2或更大時,兩個或更多個R20 彼此相同或不同, R18 和R19 各自獨立地為經取代或未經取代的C2 -C60 烷基、經取代或未經取代的C2 -C60 烯基、經取代或未經取代的C2 -C60 炔基、經取代或未經取代的C1 -C60 烷氧基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、經取代或未經取代的C3 -C10 環烯基、經取代或未經取代的C2 -C10 雜環烯基、經取代或未經取代的C6 -C60 芳基、經取代或未經取代的C6 -C60 芳氧基、經取代或未經取代的C6 -C60 芳硫基、經取代或未經取代的C1 -C60 雜芳基、經取代或未經取代的單價非芳族稠合多環基團或者經取代或未經取代的單價非芳族稠合雜多環基團, R1 -R8 中的兩個或更多個任選地連接以形成未經取代或被至少一個R1a 取代的C5 -C30 碳環基團或者未經取代或被至少一個R1a 取代的C1 -C30 雜環基團, 數量為d2的R20 中的兩個或更多個任選地連接以形成未經取代或被至少一個R1a 取代的C5 -C30 碳環基團或者未經取代或被至少一個R1a 取代的C1 -C30 雜環基團, R13 -R19 的兩個或更多個任選地連接以形成未經取代或被至少一個R1a 取代的C5 -C30 碳環基團或者未經取代或被至少一個R1a 取代的C1 -C30 雜環基團, R1a 與關於R2 所說明的相同, 經取代的C1 -C60 烷基、經取代的C2 -C60 烷基、經取代的C2 -C60 烯基、經取代的C2 -C60 炔基、經取代的C1 -C60 烷氧基、經取代的C3 -C10 環烷基、經取代的C2 -C10 雜環烷基、經取代的C3 -C10 環烯基、經取代的C2 -C10 雜環烯基、經取代的C6 -C60 芳基、經取代的C6 -C60 芳氧基、經取代的C6 -C60 芳硫基、經取代的C1 -C60 雜芳基、經取代的單價非芳族稠合多環基團和經取代的單價非芳族稠合雜多環基團的取代基為: 氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基或C1 -C60 烷氧基; C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基或C1 -C60 烷氧基各自經以下取代:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、-N(Q11 )(Q12 )、-Si(Q13 )(Q14 )(Q15 )、-Ge(Q13 )(Q14 )(Q15 )、-B(Q16 )(Q17 )、-P(=O)(Q18 )(Q19 )、-P(Q18 )(Q19 )或其任意組合; C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團或單價非芳族稠合雜多環基團各自未經取代或經以下取代:氘、-F、-Cl、-Br、-I、-CD3 、-CD2 H、-CDH2 、-CF3 、-CF2 H、-CFH2 、羥基、氰基、硝基、氨基、脒基、肼基、腙基、羧酸基團或其鹽、磺酸基團或其鹽、磷酸基團或其鹽、C1 -C60 烷基、C2 -C60 烯基、C2 -C60 炔基、C1 -C60 烷氧基、C3 -C10 環烷基、C2 -C10 雜環烷基、C3 -C10 環烯基、C2 -C10 雜環烯基、C6 -C60 芳基、C6 -C60 芳氧基、C6 -C60 芳硫基、C1 -C60 雜芳基、單價非芳族稠合多環基團、單價非芳族稠合雜多環基團、-N(Q21 )(Q22 )、-Si(Q23 )(Q24 )(Q25 )、-Ge(Q23 )(Q24 )(Q25 )、-B(Q26 )(Q27 )、-P(=O)(Q28 )(Q29 )、-P(Q28 )(Q29 )或其任意組合;-N(Q31 )(Q32 )、-Si(Q33 )(Q34 )(Q35 )、-Ge(Q33 )(Q34 )(Q35 )、-B(Q36 )(Q37 )、-P(=O)(Q38 )(Q39 )或-P(Q38 )(Q39 );或 其任意組合, 其中Q1 -Q9 、Q11 -Q19 、Q21 -Q29 和Q31 -Q39 各自獨立地為氫;氘;-F;-Cl;-Br;-I;羥基;氰基;硝基;脒基;肼基;腙基;羧酸基團或其鹽;磺酸基團或其鹽;磷酸基團或其鹽;未經取代的或者經氘、C1 -C60 烷基、C6 -C60 芳基或其任意組合取代的C1 -C60 烷基;C2 -C60 烯基;C2 -C60 炔基;C1 -C60 烷氧基;C3 -C10 環烷基;C2 -C10 雜環烷基;C3 -C10 環烯基;C2 -C10 雜環烯基;未經取代的或者被氘、C1 -C60 烷基、C6 -C60 芳基或其任意組合取代的C6 -C60 芳基;C6 -C60 芳氧基;C6 -C60 芳硫基;C1 -C60 雜芳基;單價非芳族稠合多環基團;或單價非芳族稠合雜多環基團。
The organometallic compound is represented by Formula 1: [Formula 1]
Figure 03_image001
Wherein, in formula 1, Y 2 is C, ring A 2 is a C 5 -C 30 carbocyclic group or a C 1 -C 30 heterocyclic group, R 1 -R 8 , R 13 -R 17 and R 20 Each independently is hydrogen, deuterium, -F, -Cl, -Br, -I, -SF 5 , hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or salt thereof , Sulfonic acid group or its salt, phosphoric acid group or its salt, substituted or unsubstituted C 1 -C 60 alkyl, substituted or unsubstituted C 2 -C 60 alkenyl, substituted or unsubstituted Substituted C 2 -C 60 alkynyl, substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted C 2 -C 10 heterocycloalkenyl, substituted or unsubstituted C 6 -C 60 aryl group, substituted or unsubstituted C 6 -C 60 aryloxy group, substituted or unsubstituted C 6 -C 60 arylthio group, substituted or unsubstituted C 1- C 60 heteroaryl, substituted or unsubstituted monovalent non-aromatic fused polycyclic group, substituted or unsubstituted monovalent non-aromatic fused heteropolycyclic group, -N(Q 1 )( Q 2 ), -Si(Q 3 )(Q 4 )(Q 5 ), -Ge(Q 3 )(Q 4 )(Q 5 ), -B(Q 6 )(Q 7 ), -P(=O )(Q 8 )(Q 9 ) or -P(Q 8 )(Q 9 ), provided that i) at least one of R 1 -R 8 includes at least one fluorine group (-F); and ii) R 20 Neither the fluorine group (-F) nor the cyano group is included, d2 is an integer from 0 to 10, and when d2 is 2 or greater, two or more R 20 are the same or different from each other, R 18 and R 19 is each independently a substituted or unsubstituted C 2 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkenyl group, a substituted or unsubstituted C 2 -C 60 alkynyl group , Substituted or unsubstituted C 1 -C 60 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, Substituted or unsubstituted C 3 -C 10 cycloalkenyl, substituted or unsubstituted C 2 -C 10 heterocycloalkenyl, substituted or unsubstituted C 6 -C 60 aryl, substituted Or unsubstituted C 6 -C 60 aryloxy, substituted or unsubstituted C 6 -C 60 arylthio, substituted or unsubstituted C 1 -C 60 heteroaryl, substituted or unsubstituted A substituted monovalent non-aromatic fused polycyclic group or a substituted or unsubstituted monovalent non-aromatic fused heteropolycyclic group, R 1 -R 8 Two or more are optionally linked to form unsubstituted or substituted with at least one R 1a is C 5 -C 30 carbocyclic group or unsubstituted or substituted by at least one R 1a is C 1 -C 30 A heterocyclic group, two or more of R 20 in the number d2 are optionally connected to form a C 5 -C 30 carbocyclic group that is unsubstituted or substituted with at least one R 1a or is unsubstituted or R 1a is substituted with at least one C 1 -C 30 heterocyclic group, two R 13 -R 19 or more are optionally linked to form unsubstituted or substituted with at least one R 1a is C 5 -C A 30- carbocyclic group or a C 1 -C 30 heterocyclic group that is unsubstituted or substituted by at least one R 1a , R 1a is the same as described for R 2 , substituted C 1 -C 60 alkyl, Substituted C 2 -C 60 alkyl, substituted C 2 -C 60 alkenyl, substituted C 2 -C 60 alkynyl, substituted C 1 -C 60 alkoxy, substituted C 3- C 10 cycloalkyl, substituted C 2 -C 10 heterocycloalkyl, substituted C 3 -C 10 cycloalkenyl, substituted C 2 -C 10 heterocycloalkenyl, substituted C 6- C 60 aryl, substituted C 6 -C 60 aryloxy, substituted C 6 -C 60 arylthio, substituted C 1 -C 60 heteroaryl, substituted monovalent non-aromatic fused The substituents of the polycyclic group and the substituted monovalent non-aromatic fused heteropolycyclic group are: deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, phosphoric acid Group or its salt, C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl or C 1 -C 60 alkoxy; C 1 -C 60 alkyl, C 2- C 60 alkenyl, C 2 -C 60 alkynyl or C 1 -C 60 alkoxy are each substituted by deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H,- CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt , Phosphoric acid group or its salt, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 1 -C 60 heteroaryl, monovalent non-aromatic fused polycyclic group, monovalent non-aromatic fused heteropoly Cyclic group, -N(Q 11 )(Q 12 ), -Si(Q 13 )(Q 14 )(Q 15 ), -Ge(Q 13 )(Q 14 )(Q 15 ), -B(Q 16 )(Q 17 ), -P(=O)(Q 18 )(Q 19 ), -P(Q 18 )(Q 19 ) or any combination thereof; C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 1 -C 60 heteroaryl, monovalent non-aromatic fused The polycyclic group or the monovalent non-aromatic fused heteropolycyclic group is each unsubstituted or substituted by deuterium, -F, -Cl, -Br, -I, -CD 3 , -CD 2 H, -CDH 2 , -CF 3 , -CF 2 H, -CFH 2 , hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid group or its salt, sulfonic acid group or its salt, Phosphoric acid group or its salt, C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl, C 1 -C 60 alkoxy, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 2 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 6 -C 60 aryloxy, C 6 -C 60 Arylthio, C 1 -C 60 heteroaryl, monovalent non-aromatic fused polycyclic group, monovalent non-aromatic fused heteropolycyclic group, -N(Q 21 )(Q 22 ), -Si( Q 23 )(Q 24 )(Q 25 ), -Ge(Q 23 )(Q 24 )(Q 25 ), -B(Q 26 )(Q 27 ), -P(=O)(Q 28 )(Q 29 ), -P(Q 28 )(Q 29 ) or any combination thereof; -N(Q 31 )(Q 32 ), -Si(Q 33 )(Q 34 )(Q 35 ), -Ge(Q 33 ) (Q 34 )(Q 35 ), -B(Q 36 )(Q 37 ), -P(=O)(Q 38 )(Q 39 ) or -P(Q 38 )(Q 39 ); or any combination thereof , Where Q 1 -Q 9 , Q 11 -Q 19 , Q 21 -Q 29 and Q 31 -Q 39 are each independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; Nitro group; amidino group; hydrazine group; hydrazone group; carboxylic acid group or its salt; sulfonic acid group or its salt; phosphoric acid group or its salt; unsubstituted or deuterium, C 1 -C 60 alkyl , C 6 -C 60 aryl or C 1 -C 60 alkyl substituted by any combination thereof; C 2 -C 60 alkenyl; C 2 -C 60 alkynyl; C 1 -C 60 alkoxy; C 3 -C 10 cycloalkyl; C 2 -C 10 heterocycloalkyl; C 3 -C 10 cycloalkenyl; C 2 -C 10 heterocycloalkenyl; unsubstituted or deuterated or C 1 -C 60 alkyl, C 6 -C 60 aryl group, or any combination thereof C 6 -C 60 substituted aryl group; C 6 -C 60 aryloxy; C 6 -C 60 aryl group; C 1 -C 60 heteroaryl Group; a monovalent non-aromatic fused polycyclic group; or a monovalent non-aromatic fused heteropolycyclic group.
如申請專利範圍第1項所述的有機金屬化合物,其中 環A2 為苯基團、萘基團、1,2,3,4-四氫萘基團、噻吩基團、呋喃基團、吡咯基團、環戊二烯基團、噻咯基團、苯並噻吩基團、苯並呋喃基團、吲哚基團、茚基團、苯並噻咯基團、二苯並噻吩基團、二苯並呋喃基團、哢唑基團、芴基團或二苯並噻咯基團。The organometallic compound described in item 1 of the scope of patent application, wherein ring A 2 is a phenyl group, a naphthalene group, a 1,2,3,4-tetrahydronaphthalene group, a thiophene group, a furan group, a pyrrole Group, cyclopentadiene group, silole group, benzothiophene group, benzofuran group, indole group, indene group, benzosilole group, dibenzothiophene group, A dibenzofuran group, a azole group, a fluorene group, or a dibenzosilole group. 如申請專利範圍第1項所述的有機金屬化合物,其中 R1 -R8 、R13 -R17 和R20 各自獨立地為氫、氘、-F、經取代或未經取代的C1 -C20 烷基、經取代或未經取代的C3 -C10 環烷基、經取代或未經取代的C2 -C10 雜環烷基、-Si(Q3 )(Q4 )(Q5 )或-Ge(Q3 )(Q4 )(Q5 )。The organometallic compound as described in item 1 of the scope of patent application, wherein R 1 -R 8 , R 13 -R 17 and R 20 are each independently hydrogen, deuterium, -F, substituted or unsubstituted C 1- C 20 alkyl, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 2 -C 10 heterocycloalkyl, -Si(Q 3 )(Q 4 )(Q 5 ) or -Ge(Q 3 )(Q 4 )(Q 5 ). 如申請專利範圍第1項所述的有機金屬化合物,其中 R1 -R8 和R13 -R17 各自獨立地為: 氫、氘或-F; C1 -C20 烷基、C3 -C10 環烷基或C2 -C10 雜環烷基,各自未經取代或經以下取代:氘、-F、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合;或 -Si(Q3 )(Q4 )(Q5 )或-Ge(Q3 )(Q4 )(Q5 ),且 R20 為 氫或氘; C1 -C20 烷基、C3 -C10 環烷基或C2 -C10 雜環烷基,各自未經取代或經以下取代:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合;或 -Si(Q3 )(Q4 )(Q5 )或-Ge(Q3 )(Q4 )(Q5 )。The organometallic compound as described in item 1 of the scope of patent application, wherein R 1 -R 8 and R 13 -R 17 are each independently: hydrogen, deuterium or -F; C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl or C 2 -C 10 heterocycloalkyl, each unsubstituted or substituted with deuterium, -F, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 Heterocycloalkyl or any combination thereof; or -Si(Q 3 )(Q 4 )(Q 5 ) or -Ge(Q 3 )(Q 4 )(Q 5 ), and R 20 is hydrogen or deuterium; C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, or C 2 -C 10 heterocycloalkyl, each unsubstituted or substituted with: deuterium, C 1 -C 20 alkyl, C 3 -C 10 Cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof; or -Si(Q 3 )(Q 4 )(Q 5 ) or -Ge(Q 3 )(Q 4 )(Q 5 ). 如申請專利範圍第1項所述的有機金屬化合物,其中 R1 -R8 中的至少一個各自獨立地為: 氟基團(-F);或 氟化C1 -C20 烷基、氟化C3 -C10 環烷基或氟化C2 -C10 雜環烷基,各自未經取代或經以下取代:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合。The organometallic compound described in item 1 of the scope of patent application, wherein at least one of R 1 -R 8 is each independently: a fluorine group (-F); or a fluorinated C 1 -C 20 alkyl group, fluorinated C 3 -C 10 cycloalkyl or fluorinated C 2 -C 10 heterocycloalkyl, each unsubstituted or substituted with deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl or any combination thereof. 如申請專利範圍第1項所述的有機金屬化合物,其中 R18 和R19 各自獨立地為經取代或未經取代的C2 -C60 烷基、經取代或未經取代的C3 -C10 環烷基或者經取代或未經取代的C2 -C10 雜環烷基。The organometallic compound described in item 1 of the scope of patent application, wherein R 18 and R 19 are each independently a substituted or unsubstituted C 2 -C 60 alkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkyl or substituted or unsubstituted C 2 -C 10 heterocycloalkyl. 如申請專利範圍第1項所述的有機金屬化合物,其中 R18 和R19 各自獨立地為C2 -C20 烷基、C3 -C10 環烷基或C2 -C10 雜環烷基,各自未經取代或經以下取代:氘、-F、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合。The organometallic compound described in item 1 of the scope of patent application, wherein R 18 and R 19 are each independently a C 2 -C 20 alkyl group, a C 3 -C 10 cycloalkyl group or a C 2 -C 10 heterocycloalkyl group , Each is unsubstituted or substituted with deuterium, -F, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof. 如申請專利範圍第1項所述的有機金屬化合物,其中 R4 -R8 中的至少一個包括至少一個氟基團(-F)。The organometallic compound as described in item 1 of the patent application, wherein at least one of R 4 to R 8 includes at least one fluorine group (-F). 如申請專利範圍第1項所述的有機金屬化合物,其中 R1 -R8 中的一個或兩個各自獨立地包括至少一個氟基團(-F),且 R1 -R8 中的至少一個i)不包括氟基團(-F),且ii)不是氫。The organometallic compound as described in item 1 of the patent application, wherein one or two of R 1 -R 8 each independently includes at least one fluorine group (-F), and at least one of R 1 -R 8 i) does not include the fluorine group (-F), and ii) is not hydrogen. 如申請專利範圍第1項所述的有機金屬化合物,其中 式1中的由
Figure 03_image063
表示的基團為由式CY1至CY88之一表示的基團:
Figure 03_image065
Figure 03_image067
Figure 03_image069
Figure 03_image071
Figure 03_image073
Figure 03_image075
Figure 03_image077
Figure 03_image079
Figure 03_image081
Figure 03_image083
其中,在式CY1至CY88中, T4 -T8 各自獨立地為: 氟基團(-F);或 氟化C1 -C20 烷基、氟化C3 -C10 環烷基或氟化C2 -C10 雜環烷基,各自未經取代或經以下取代:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合,其中 R2 、R5 -R8 和R1a 各自與在申請專利範圍第1項中所描述的相同,並且R2 和R5 -R8 不是氫, *'表示與式1中的Ir的結合位點,且 *"表示與式1中的相鄰原子的結合位點。
The organometallic compound as described in item 1 of the scope of patent application, wherein the formula 1 is
Figure 03_image063
The represented group is a group represented by one of formulas CY1 to CY88:
Figure 03_image065
Figure 03_image067
Figure 03_image069
Figure 03_image071
Figure 03_image073
Figure 03_image075
Figure 03_image077
Figure 03_image079
Figure 03_image081
Figure 03_image083
Wherein, in formulas CY1 to CY88, T 4 -T 8 are each independently: fluorine group (-F); or fluorinated C 1 -C 20 alkyl, fluorinated C 3 -C 10 cycloalkyl or fluorine C 2 -C 10 heterocycloalkyl, each unsubstituted or substituted by deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or Any combination, wherein R 2 , R 5 -R 8 and R 1a are each the same as described in item 1 of the scope of the patent application, and R 2 and R 5 -R 8 are not hydrogen, *'means the same as in formula 1. The binding site of Ir, and *" indicates the binding site with the adjacent atom in Formula 1.
如申請專利範圍第10項所述的有機金屬化合物,其中 式CY1至CY88中的R2 和R5 -R8 各自獨立地為: 氘;或 C1 -C20 烷基、C3 -C10 環烷基或C1 -C10 雜環烷基,各自未經取代或經以下取代:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合。The organometallic compound as described in item 10 of the scope of patent application, wherein R 2 and R 5 -R 8 in formulas CY1 to CY88 are each independently: deuterium; or C 1 -C 20 alkyl, C 3 -C 10 Cycloalkyl or C 1 -C 10 heterocycloalkyl, each unsubstituted or substituted with deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkane基 or any combination thereof. 如申請專利範圍第1項所述的有機金屬化合物,其中 式1中的由
Figure 03_image085
表示的基團為由式A(1)至式A(7)中的一者表示的基團:
Figure 03_image087
其中,在式A(1)至式A(7)中, Y2 為C, X2 為O、S、N(R25 )、C(R25 )(R26 )或Si(R25 )(R26 ), R9 -R12 和R21 -R26 各自與在申請專利範圍第1項中關於R20 描述的相同, *'表示與式1中的Ir的結合位點,且 *"表示與式1中的相鄰原子的結合位點。
The organometallic compound as described in item 1 of the scope of patent application, wherein the formula 1 is
Figure 03_image085
The represented group is a group represented by one of formula A(1) to formula A(7):
Figure 03_image087
Among them, in formula A(1) to formula A(7), Y 2 is C, X 2 is O, S, N(R 25 ), C(R 25 )(R 26 ) or Si(R 25 )( R 26 ), R 9 -R 12 and R 21 -R 26 are each the same as described for R 20 in the first item of the scope of patent application, *'represents the binding site with Ir in formula 1, and *" represents The binding site with the adjacent atom in Formula 1.
如申請專利範圍第12項所述的有機金屬化合物,其中 式A(1)中的R9 和R11 自獨立地為C1 -C20 烷基、C3 -C10 環烷基或C2 -C10 雜環烷基,各自未經取代或經以下取代:氘、C1 -C20 烷基、C3 -C10 環烷基、C2 -C10 雜環烷基或其任意組合。The organometallic compound as described in item 12 of the scope of patent application, wherein R 9 and R 11 in formula A(1) are independently C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl or C 2 -C 10 heterocycloalkyl, each unsubstituted or substituted with deuterium, C 1 -C 20 alkyl, C 3 -C 10 cycloalkyl, C 2 -C 10 heterocycloalkyl, or any combination thereof. 如申請專利範圍第1項所述的有機金屬化合物,其中 R14 和R16 不為氫。The organometallic compound described in item 1 of the scope of patent application, wherein R 14 and R 16 are not hydrogen. 如申請專利範圍第1項所述的有機金屬化合物,其中 式1中的由*-C(R13 )(R14 )(R19 )表示的基團中的碳的數量為5或更多,且 式1中的由*-C(R16 )(R17 )(R18 )表示的基團中的碳的數量為5或更多。The organometallic compound as described in item 1 of the patent application, wherein the number of carbons in the group represented by *-C(R 13 )(R 14 )(R 19 ) in Formula 1 is 5 or more, And the number of carbons in the group represented by *-C(R 16 )(R 17 )(R 18 ) in Formula 1 is 5 or more. 如申請專利範圍第1項所述的有機金屬化合物,其中 所述有機金屬化合物為下面的化合物1至38中的一者:
Figure 03_image090
Figure 03_image092
Figure 03_image094
Figure 03_image098
Figure 03_image100
The organometallic compound according to item 1 of the scope of patent application, wherein the organometallic compound is one of the following compounds 1 to 38:
Figure 03_image090
Figure 03_image092
Figure 03_image094
Figure 03_image098
Figure 03_image100
.
有機發光器件,包括: 第一電極; 第二電極;以及 有機層,設置在所述第一電極和所述第二電極之間且包括發射層, 其中所述有機層包括至少一種如申請專利範圍第1項所述的有機金屬化合物。Organic light-emitting devices, including: First electrode Second electrode; and An organic layer disposed between the first electrode and the second electrode and including an emission layer, The organic layer includes at least one organometallic compound as described in item 1 of the scope of the patent application. 如申請專利範圍第17項所述的有機發光器件,其中 所述第一電極為陽極, 所述第二電極為陰極, 所述有機層更包括在所述第一電極和所述發射層之間的電洞傳輸區域以及在所述發射層和所述第二電極之間的電子傳輸區域, 所述電洞傳輸區域包括電洞注入層、電洞傳輸層、電子阻擋層、緩衝層或其任意組合,且 所述電子傳輸區域包括電洞阻擋層、電子傳輸層、電子注入層或其任意組合。The organic light-emitting device as described in item 17 of the scope of patent application, wherein The first electrode is an anode, The second electrode is a cathode, The organic layer further includes a hole transport area between the first electrode and the emission layer and an electron transport area between the emission layer and the second electrode, The hole transport area includes a hole injection layer, a hole transport layer, an electron blocking layer, a buffer layer or any combination thereof, and The electron transport region includes a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof. 如申請專利範圍第17項所述的有機發光器件,其中 所述有機金屬化合物包括在所述發射層中。The organic light-emitting device as described in item 17 of the scope of patent application, wherein The organometallic compound is included in the emission layer. 如申請專利範圍第19項所述的有機發光器件,其中 所述發射層發射紅色光。The organic light-emitting device as described in item 19 of the scope of patent application, wherein The emission layer emits red light.
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