TW202025292A - Air-intake pipe connecting device and air-intake unit for plasma etching containing the same avoiding the metal contamination of the wafer caused by the corrosion of the etching gas pipeline - Google Patents
Air-intake pipe connecting device and air-intake unit for plasma etching containing the same avoiding the metal contamination of the wafer caused by the corrosion of the etching gas pipeline Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本發明涉及電漿蝕刻技術領域,具體涉及一種進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元。The invention relates to the technical field of plasma etching, in particular to an air intake pipeline connecting device and an air intake unit for plasma etching containing the same.
現有電漿蝕刻技術中,在電感耦合電漿(ICP,Inductive Coupled Plasma)和電容耦合(CCP)型蝕刻機臺上往往會通入Cl2、COS、HBr、SiCl4等腐蝕性氣體對矽片(silicon)進行蝕刻。In the existing plasma etching technology, inductively coupled plasma (ICP, Inductive Coupled Plasma) and capacitive coupling (CCP) type etching machines are often introduced Cl2, COS, HBr, SiCl4 and other corrosive gases to the silicon wafer (silicon ) Perform etching.
這些腐蝕性氣體需要透過氣體管線(gas line)金屬管道進入反應腔體中。目前大多數氣體管線的材質使用SST316L等不銹鋼管材。在打開反應腔體(chamber)的時候,大氣中的水汽(water vapor)會進入暴露在外的SST316L管路中。These corrosive gases need to enter the reaction chamber through a gas line metal pipe. At present, most gas pipeline materials use stainless steel pipes such as SST316L. When the reaction chamber is opened, water vapor in the atmosphere will enter the exposed SST316L pipeline.
故每次開腔後,水汽會停留氣體管線中很難揮發掉。水汽遇到腐蝕性氣體就會腐蝕焊縫。研究表明,當水汽濃度超過0.5PPM時,金屬管道的焊縫處就會被腐蝕;當水汽濃度大於100PPM時,肉眼可見腐蝕點。焊縫的腐蝕,會將不銹鋼中成分中的Cr、Mn等重金屬帶出來,沉積在晶片(wafer)上,對晶片造成金屬污染。當前的通常做法是每次開完腔就需要更換氣體管線,維修成本高,耗時長。故目前尚沒有一種能夠有效避免水汽對氣體管線焊縫腐蝕的解決辦法。Therefore, after each cavity is opened, the water vapor will stay in the gas pipeline and is difficult to volatilize. Water vapor will corrode the weld when it encounters corrosive gas. Studies have shown that when the water vapor concentration exceeds 0.5PPM, the welds of the metal pipes will be corroded; when the water vapor concentration is greater than 100PPM, the corrosion points are visible to the naked eye. The corrosion of the weld will bring out the heavy metals such as Cr and Mn in the stainless steel and deposit them on the wafer, causing metal contamination to the wafer. The current common practice is to replace the gas pipeline every time the cavity is opened, which is costly and time-consuming to maintain. Therefore, there is no solution that can effectively avoid the corrosion of the welds of gas pipelines by water vapor.
本發明的目的是提供一種進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元,以解決現有技術中無法有效避免水汽對蝕刻氣體管線焊縫腐蝕的問題。The object of the present invention is to provide an air inlet pipe connecting device and an air inlet unit for plasma etching containing the same, so as to solve the problem that water vapor cannot effectively avoid corrosion of etching gas pipeline welds in the prior art.
為達到上述目的,本發明提供了一種進氣管路連接裝置,用於連接蝕刻氣體管線和蝕刻反應腔體上的氣體管路接頭,其中,進氣管路連接裝置包括管狀本體及設置在管狀本體內的耐腐蝕密封件;蝕刻氣體管線與氣體管路接頭分別從管狀本體的兩端伸入並進行對接,且對接處由耐腐蝕密封件進行環繞並密封;管狀本體的兩端分別與蝕刻氣體管線與氣體管路接頭透過焊接固定。In order to achieve the above objective, the present invention provides an air inlet pipe connection device for connecting an etching gas pipeline and a gas pipe joint on the etching reaction chamber, wherein the air inlet pipe connection device includes a tubular body and is arranged in the tubular body. Corrosion-resistant seals in the body; the etching gas pipeline and the gas pipeline joints extend from the two ends of the tubular body and are connected, and the joint is surrounded and sealed by the corrosion-resistant seal; the two ends of the tubular body are respectively connected with the etching The gas pipeline and the gas pipeline joint are fixed by welding.
上述的進氣管路連接裝置,其中,管狀本體內設置有用於嵌入耐腐蝕密封件的第一環形凹槽。In the above-mentioned air inlet pipe connecting device, the tubular body is provided with a first annular groove for embedding the corrosion-resistant seal.
上述的進氣管路連接裝置,其中,蝕刻氣體管線與氣體管路接頭對接處的外壁組合成用於嵌入耐腐蝕密封件的第二環形凹槽。In the above-mentioned air inlet pipe connecting device, the outer wall of the joint of the etching gas pipe and the gas pipe joint is combined into a second annular groove for embedding the corrosion-resistant seal.
上述的進氣管路連接裝置,其中,蝕刻氣體管線和氣體管路接頭在遠離對接處的外壁上分別設置有第一環形向外延伸部和第二環形向外延伸部;第一環形向外延伸部和第二環形向外延伸部之間組合成用於嵌入管狀本體的第三環形凹槽。In the above-mentioned air inlet pipe connecting device, the etching gas pipeline and the gas pipeline joint are respectively provided with a first annular outward extending portion and a second annular outward extending portion on the outer wall away from the butting place; the first annular shape The outward extending portion and the second annular outward extending portion are combined to form a third annular groove for inserting into the tubular body.
上述的進氣管路連接裝置,其中,管狀本體的外周分別與第一環形向外延伸部和第二環形向外延伸部的外周對齊;焊接所形成的焊縫位於管狀本體分別與第一環形向外延伸部和第二環形向外延伸部結合處的外周位置,以使焊縫遠離蝕刻氣體管線及氣體管路接頭的本體。In the above-mentioned air inlet pipe connecting device, the outer circumference of the tubular body is aligned with the outer circumference of the first annular outward extending portion and the second annular outward extending portion; the weld formed by welding is located on the tubular body and the first The outer peripheral position of the joint of the annular outward extension part and the second annular outward extension part, so that the weld is away from the etching gas pipeline and the body of the gas pipeline joint.
上述的進氣管路連接裝置,其中,管狀本體的兩側分別設置有第三環形向外延伸部和第四環形向外延伸部;第三環形向外延伸部和第四環形向外延伸部分別與第一環形向外延伸部和第二環形向外延伸部的外周對齊。In the above-mentioned air inlet pipe connecting device, a third annular outward extending portion and a fourth annular outward extending portion are respectively provided on both sides of the tubular body; the third annular outward extending portion and the fourth annular outward extending portion Do not align with the outer peripheries of the first annular outward extending portion and the second annular outward extending portion.
上述的進氣管路連接裝置,其中,管狀本體的材質為不銹鋼。In the above-mentioned air inlet pipe connecting device, the material of the tubular body is stainless steel.
上述的進氣管路連接裝置,其中,耐腐蝕密封件的材質為鐵氟龍或聚醯亞胺。In the above-mentioned air inlet pipe connecting device, the material of the corrosion-resistant seal is Teflon or polyimide.
上述的進氣管路連接裝置,其中,氣體管路接頭為VCR接頭。In the above-mentioned air inlet pipe connection device, the gas pipe joint is a VCR joint.
本發明還提供了一種用於電漿蝕刻的進氣單元,其中,該進氣單元包括:用於提供蝕刻氣體的蝕刻氣體源;與蝕刻氣體源相連的蝕刻氣體管線;設置在蝕刻反應腔體上的氣體管路接頭以及上述的進氣管路連接裝置,用於連接蝕刻氣體管線和氣體管路接頭。The present invention also provides an air intake unit for plasma etching, wherein the air intake unit includes: an etching gas source for supplying etching gas; an etching gas pipeline connected to the etching gas source; and is arranged in the etching reaction chamber The upper gas pipeline joint and the above-mentioned air inlet pipeline connection device are used to connect the etching gas pipeline and the gas pipeline joint.
相對於現有技術,本發明具有以下有益效果為: 在現有的電漿蝕刻製程中,採用本發明所提供的進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元後,水汽進入蝕刻氣體管線中所接觸到的是耐腐蝕密封件,不會接觸到焊接在進氣管路連接裝置外部兩側的焊縫,因而避免了原有蝕刻氣體管線焊縫的腐蝕,延長了蝕刻氣體管線的使用壽命,可以進一步有效避免由於蝕刻氣體管線腐蝕造成的晶片金屬污染,提高了產品的品質。Compared with the prior art, the present invention has the following beneficial effects: In the existing plasma etching process, after the air inlet pipe connection device provided by the present invention and the air inlet unit for plasma etching containing it are used, the water vapor enters the etching gas pipeline and touches the corrosion-resistant seal. The parts will not come into contact with the welds welded on both sides of the inlet pipe connection device, thus avoiding the corrosion of the welds of the original etching gas pipeline, prolonging the service life of the etching gas pipeline, and further effectively avoiding the etching gas The chip metal contamination caused by pipeline corrosion improves the quality of the product.
以下結合附圖透過具體實施例對本發明作進一步的描述,這些實施例僅用於說明本發明,並不是對本發明保護範圍的限制。The present invention will be further described below through specific embodiments with reference to the accompanying drawings. These embodiments are only used to illustrate the present invention and do not limit the protection scope of the present invention.
如第1圖所示,為蝕刻反應腔體6及其進氣單元22的一現有實施例的結構示意圖。氣體主管線內的蝕刻氣體中的一部分經分流器4分流後通過第一氣體管線1及第二氣體管線2進行輸送,再進而通過蝕刻反應腔體6的中央進氣口進入蝕刻反應腔體6內部;蝕刻氣體中的另一部分直接透過第三氣體管線3進行輸送,再進而透過蝕刻反應腔體6的周邊進氣口進入蝕刻反應腔體6內部。第一氣體管線1、第二氣體管線2及第三氣體管線3共同組成了蝕刻氣體管線15。用於輸送調諧氣體的調諧氣體管線5同時與第一氣體管線1、第二氣體管線2和第三氣體管線3連接,以將調諧氣體混入蝕刻氣體中,再進而輸送至蝕刻反應腔體6內。目前大多數的蝕刻氣體管線15往往使用方便易得,價格低廉的SST316L不銹鋼等不易被腐蝕的管材,但是這樣的設計也帶來了以下問題:當每次打開蝕刻反應腔體6後,與蝕刻反應腔體6直接相連的蝕刻氣體管線15將直接暴露在空氣中。特別是不同的管線在結合不需將兩個管線的端口部透過焊接連接並實現密封,但是高溫焊接過程會破壞不銹鋼材料內部結構,使得原來具有較高防腐蝕特性的不銹鋼變得易於被腐蝕。所以在蝕刻反應腔體6上的氣體管路接頭16與蝕刻氣體管線15的焊接處特別容易發生被蝕刻氣體腐蝕的現象,特別是空氣中的水汽進入的情況下,更易發生腐蝕。空氣中的水汽會停留在第1圖所示的第一氣體管線1、第二氣體管線2及第三氣體管線3中並很難揮發掉,水汽遇到蝕刻氣體中的腐蝕性氣體便會腐蝕蝕刻氣體管線15的焊縫。現有的解決辦法是及時更換第一氣體管線1、第二氣體管線2及第三氣體管線3,或者是將蝕刻氣體管線15的材質換成更耐腐蝕的哈氏合金不銹鋼,以延長管線的使用壽命。但目前的做法都存在大幅增加成本的問題,且哈氏合金不銹鋼無法適用於蝕刻氣體中存在CO等氣體的情況。As shown in FIG. 1, it is a schematic structural diagram of an existing embodiment of the
在上述實施例的基礎上,本發明提供了一種進氣管路連接裝置,用於連接蝕刻氣體管線15和蝕刻反應腔體6中央進氣口和周邊進氣口上的氣體管路接頭16。如第2圖所示,為本發明進氣管路連接裝置用於連接蝕刻氣體管線15和氣體管路接頭16時的結構示意圖,該圖同時顯示了管路連接時的截面圖和外觀圖。進氣管路連接裝置包括管狀本體17及設置在管狀本體17內的耐腐蝕密封件18;蝕刻氣體管線15與氣體管路接頭16分別從管狀本體17的兩端伸入並進行對接,且對接處由耐腐蝕密封件18進行環繞並密封;管狀本體17的兩端分別與蝕刻氣體管線15與氣體管路接頭16透過焊接固定,即在管狀本體17兩側分別與氣體管路接頭16和蝕刻氣體管線15各形成一圈焊縫19。透過這種設計,實現了蝕刻氣體反應腔體打開時,與空氣接觸的蝕刻氣體管線15沒有焊縫,從而防止蝕刻氣體管線15被腐蝕,延長了蝕刻氣體管線15的使用壽命。在該實施例中,蝕刻反應腔體6由絕緣窗體7、腔體側壁、腔體底壁等組成,內設靜電卡盤8,靜電卡盤8上可放置晶片9,腔體側壁上設置有晶片9轉移通道10。排氣口(圖中未示出)與真空裝置連接,將蝕刻反應腔體6製造成真空環境,絕緣窗體7上方的線圈11通以射頻能量,透過絕緣窗體7耦合,在蝕刻反應腔體6中形成電漿,對靜電卡盤8上的晶片9進行蝕刻。蝕刻反應腔體6的側壁上設置有側壁內襯12,使得腔室側壁不再直接接觸電漿,免受電漿的轟擊,並且使清洗和更換更為方便。因而使用了本發明所提供的進氣管路連接裝置後,可以進一步有效避免由於蝕刻氣體管線15腐蝕造成的晶片9金屬污染,提高了產品的品質。On the basis of the above-mentioned embodiments, the present invention provides an air inlet pipe connection device for connecting the
在該實施例中,為實現對耐腐蝕密封件的限位,可以在管狀本體17內設置有用於嵌入耐腐蝕密封件18的第一環形凹槽。為實現同樣的目的,也可以在蝕刻氣體管線15與氣體管路接頭16對接處的外壁組合成第二環形凹槽,用以嵌入耐腐蝕密封件18。In this embodiment, in order to limit the position of the corrosion-resistant sealing element, a first annular groove for embedding the corrosion-
如第3圖所示,為了實現對管狀本體17的限位,蝕刻氣體管線15和氣體管路接頭16在遠離對接處的外壁上分別設置有第一環形向外延伸部151和第二環形向外延伸部161;第一環形向外延伸部151和第二環形向外延伸部161之間組合成第三環形凹槽,用以嵌入管狀本體17。As shown in Figure 3, in order to limit the position of the
在上述實施例中,為了避免了不銹鋼管道受熱破壞內部結構,並減少腐蝕發生,管狀本體17的外周分別與第一環形向外延伸部151和第二環形向外延伸部161的外周對齊;焊接所形成的焊縫位於管狀本體17分別與第一環形向外延伸部151和第二環形向外延伸部161結合處的外周位置,以使焊縫遠離蝕刻氣體管線15及氣體管路接頭16的本體,從而避免高溫焊接過程會破壞蝕刻氣體管線15和氣體管路接頭16的不銹鋼材料內部結構,使得原來具有較高防腐蝕特性的不銹鋼變得易於被腐蝕。In the above embodiment, in order to avoid damage to the internal structure of the stainless steel pipe by heating and reduce the occurrence of corrosion, the outer circumference of the
進一步地,為了減少管狀本體17的厚度以降低管狀本體17的材料成本,管狀本體17的兩側分別設置有第三環形向外延伸部171和第四環形向外延伸部172;第三環形向外延伸部171和第四環形向外延伸部172分別與第一環形向外延伸部151和第二環形向外延伸部161的外周對齊,從而能夠在滿足焊縫遠離蝕刻氣體管線15及氣體管路接頭16的本體的前提下,盡可能地降低管狀本體17不必要的厚度。Further, in order to reduce the thickness of the
在該實施例中,進氣管路連接裝置的管狀本體17為金屬材質,具體可以使用各種不銹鋼材質,特別是價格低廉的SST316L不銹鋼管材。進氣管路連接裝置的耐腐蝕密封件18的材質為鐵氟龍或聚醯亞胺,或者其它能夠同時實現耐腐蝕和密封功能的材料。本實施例所使用的鐵氟龍是由四氟乙烯經聚合而成的高分子化合物,具有優良的化學穩定性、耐腐蝕性,經久耐用,密封性能可靠。蝕刻反應腔體6上的氣體管路接頭16常見的為VCR接頭。VCR接頭又稱金屬墊片面密封接頭,英文名為:Metal Gasket Face Seal Fittings, 通常應用於管路的連接。In this embodiment, the
在該實施例中,水汽進入蝕刻氣體管線15中所接觸到的是耐腐蝕密封件18,不會接觸到焊接在進氣管路連接裝置外部兩側的焊縫,因而避免了原有蝕刻氣體管線15焊縫的腐蝕。就具體結構而言,外部的管狀本體17的兩側分別與氣體管路接頭16和蝕刻氣體管線15的內徑相同,內部的耐腐蝕密封件18可根據氣體管路接頭16和蝕刻氣體管線15對接處的具體結構設計,只要能實現密封功能即可。例如氣體管路接頭16和蝕刻氣體管線15對接處形成環形凹槽結構,則耐腐蝕密封件18為設置在管狀本體17內部,與環形凹槽結構配合的環形凸起結構。由此可知,本發明所提供的進氣管路連接裝置可以根據具體的現場結構情況設計相應的結構,以實現水汽無法接觸到焊縫的目的。In this embodiment, the corrosion-
進一步地,本發明還提供了一種用於電漿蝕刻的進氣單元22,該進氣單元22包括:用於提供蝕刻氣體的蝕刻氣體源;與蝕刻氣體源相連的蝕刻氣體管線15;設置在蝕刻反應腔體6上的氣體管路接頭16以及上述的進氣管路連接裝置,用於連接蝕刻氣體管線15和氣體管路接頭16。在該實施例中,蝕刻氣體管線15上設置有分流器4,用於將蝕刻氣體管線15分為多個支路。蝕刻氣體管線15還與調諧氣體管線5相連,用於向蝕刻氣體管線15內混入調諧氣體。在現有的電漿蝕刻製程中,可以透過簡單的管線改造,在原有的蝕刻氣體管線15和蝕刻反應腔體6上的氣體管路接頭16之間增加本發明所提供的進氣管路連接裝置即可獲得本發明的進氣單元22。可以有效避免原有蝕刻氣體管線15焊縫因水汽的進入所導致的腐蝕,延長了蝕刻氣體管線15的使用週期,有效避免由於蝕刻氣體管線15腐蝕所造成的晶片9金屬污染,提高了成品的良率。Further, the present invention also provides an
為了對蝕刻氣體的通入進行有效地控制,可以在蝕刻氣體管線15上設置用於開啟和關閉蝕刻氣體管線15的閥門13,或者設置用於調節蝕刻氣體流量的流量調節裝置,或者同時設置閥門13和流量調節裝置。當然地,可以選擇氣動調節閥來同時實現管路的啟閉和蝕刻氣體流量的調節,使管線的結構更為簡單化。更進一步地,可以將閥門13和流量調節裝置併入現有的DCS控制系統中,以實現更為方便的操作和監測。為了對蝕刻氣體流量的控制,也可以在蝕刻氣體管線15的本體上進行改造,例如在蝕刻氣體管線15上設置變徑結構14,用於限制蝕刻氣體流量。該變徑結構14可以為異徑管,可以是同心大小頭或偏心大小頭,可以透過沖壓成形獲得,以實現固定的流量限制。In order to effectively control the passage of the etching gas, a
第4圖為將上述進氣單元22用於電漿處理設備的一實施例結構示意圖,設備包括蝕刻氣體反應腔體、本發明所提供的進氣單元22和用於將反應副產物從蝕刻反應腔體6內排出的抽氣單元。蝕刻氣體反應腔體包括由金屬材料製成的大致為圓柱形的反應腔側壁,反應腔側壁上方設置一氣體噴淋裝置20,氣體噴淋裝置20透過氣體混合裝置21與本發明所提供的進氣單元22相連。 在該實施例中,氣體管路接頭16一端與氣體混合裝置21相連,另一端透過本發明所提供的進氣管路連接裝置與蝕刻氣體管線15相連。Figure 4 is a schematic structural diagram of an embodiment of using the above-mentioned
進氣單元22所提供的蝕刻氣體經過氣體噴淋裝置20進入蝕刻反應腔體6,蝕刻反應腔體6的下方設置一支撐靜電卡盤8的基座23,靜電卡盤8上用於放置待處理晶片9,射頻功率源24的射頻功率施加到基座23,在蝕刻反應腔內產生將反應氣體解離為電漿的電場,電漿中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子,上述活性粒子可以和待處理晶片9的表面發生多種物理和化學反應,使得晶片9表面的形貌發生改變,即完成蝕刻過程。蝕刻反應腔體6的下方還設置一排氣泵25作為抽氣單元,用於將反應副產物排出真空反應腔內。使用本發明所提供的離子體處理設備,能夠有效避免因蝕刻氣體反應腔體打開而導致的蝕刻氣體管線15焊縫腐蝕的問題,且對各種蝕刻氣體都能夠兼容。The etching gas provided by the
綜上,在現有的電漿蝕刻製程中,採用本發明所提供的進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元後,水汽進入蝕刻氣體管線中所接觸到的是耐腐蝕密封件,不會接觸到焊接在進氣管路連接裝置外部兩側的焊縫,因而避免了原有蝕刻氣體管線焊縫的腐蝕,延長了蝕刻氣體管線的使用壽命,可以進一步有效避免由於蝕刻氣體管線腐蝕造成的晶片金屬污染,提高了產品的品質。In summary, in the existing plasma etching process, after the air inlet pipe connection device provided by the present invention and the air inlet unit for plasma etching containing it are used, what the water vapor enters into the etching gas pipeline is Corrosion-resistant seals will not touch the welds welded on the outer sides of the inlet pipe connection device, thus avoiding the corrosion of the welds of the original etching gas pipeline, extending the service life of the etching gas pipeline, and further effectively avoiding The metal contamination of the wafer caused by the corrosion of the etching gas pipeline improves the quality of the product.
儘管本發明的內容已經透過上述較佳的實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域具有通常知識者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be obvious after reading the above content by those with ordinary knowledge in the field. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.
1:第一氣體管線
2:第二氣體管線
3:第三氣體管線
4:分流器
5:調諧氣體管線
6:蝕刻反應腔體
7:絕緣窗體
8:靜電卡盤
9:晶片
10:轉移通道
11:線圈
12:側壁內襯
13:閥門
14:變徑結構
15:蝕刻氣體管線
151:第一環形向外延伸部
16:氣體管路接頭
161:第二環形向外延伸部
17:管狀本體
171:第三環形向外延伸部
172:第四環形向外延伸部
18:耐腐蝕密封件
19、29:焊縫
20:氣體噴淋裝置
21:氣體混合裝置
22:進氣單元
23:基座
24:射頻功率源
25:排氣泵1: The first gas pipeline
2: The second gas pipeline
3: The third gas pipeline
4: shunt
5: Tuning gas pipeline
6: Etching the reaction chamber
7: Insulation window
8: Electrostatic chuck
9: chip
10: Transfer channel
11: coil
12: Side wall lining
13: Valve
14: Variable diameter structure
15: Etching gas pipeline
151: First annular outward extension
16: Gas pipeline joint
161: Second annular outward extension
17: Tubular body
171: Third ring outward extension
172: Fourth annular outward extension
18: Corrosion-
第1圖為現有的蝕刻反應腔體及其進氣單元的結構示意圖; 第2圖為本發明進氣管路連接裝置一實施例的結構示意圖; 第3圖為本發明進氣管路連接裝置另一實施例的結構示意圖; 第4圖為本發明所提供的進氣單元用於電漿處理設備的結構示意圖。Figure 1 is a schematic diagram of the structure of the existing etching reaction chamber and its air inlet unit; Figure 2 is a schematic structural diagram of an embodiment of the air intake pipe connecting device of the present invention; Figure 3 is a schematic structural view of another embodiment of the air intake pipe connecting device of the present invention; Figure 4 is a schematic structural diagram of the air intake unit provided by the present invention used in plasma processing equipment.
15:蝕刻氣體管線 15: Etching gas pipeline
16:氣體管路接頭 16: Gas pipeline joint
17:管狀本體 17: Tubular body
18:耐腐蝕密封件 18: Corrosion-resistant seal
19:焊縫 19: Weld
Claims (10)
Applications Claiming Priority (2)
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CN201811613040.8A CN111383890B (en) | 2018-12-27 | 2018-12-27 | Air inlet pipeline connecting device and air inlet unit comprising same and used for plasma etching |
CN201811613040.8 | 2018-12-27 |
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TW202025292A true TW202025292A (en) | 2020-07-01 |
TWI770445B TWI770445B (en) | 2022-07-11 |
Family
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TW108145032A TWI770445B (en) | 2018-12-27 | 2019-12-10 | Air intake pipeline connection device and air intake unit for plasma etching containing the same |
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TW (1) | TWI770445B (en) |
Cited By (1)
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TWI803032B (en) * | 2020-12-23 | 2023-05-21 | 大陸商中微半導體設備(上海)股份有限公司 | Plasma processing device and processing method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5564715A (en) * | 1993-10-15 | 1996-10-15 | Corrosion Control Corp. | Tandem seal device for flow line applications |
US6042153A (en) * | 1998-02-25 | 2000-03-28 | Grant Prideco, Inc. | Threaded connection for internally clad pipe |
US6136718A (en) * | 1998-07-10 | 2000-10-24 | Motorola, Inc. | Method for manufacturing a semiconductor wafer using a threadless corrosion-preventing gas ring |
US6857668B2 (en) * | 2000-10-04 | 2005-02-22 | Grant Prideco, L.P. | Replaceable corrosion seal for threaded connections |
JP4601993B2 (en) * | 2004-05-18 | 2010-12-22 | 三菱電線工業株式会社 | Sealing material |
WO2015130427A1 (en) * | 2014-02-27 | 2015-09-03 | Sundew Technologies, Llc | Face sealed fittings |
CA2952511C (en) * | 2014-06-16 | 2023-09-19 | Core Linepipe Inc. | Pipe end forming methods and pipe clamp |
CN105390363A (en) * | 2015-10-29 | 2016-03-09 | 上海华力微电子有限公司 | Pipeline device for high-density plasma stock |
TWM549294U (en) * | 2017-05-09 | 2017-09-21 | Zi-Zheng Guo | Corrosion-resistant and anti-chemical fluid piping kit |
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