TW202025292A - Air-intake pipe connecting device and air-intake unit for plasma etching containing the same avoiding the metal contamination of the wafer caused by the corrosion of the etching gas pipeline - Google Patents

Air-intake pipe connecting device and air-intake unit for plasma etching containing the same avoiding the metal contamination of the wafer caused by the corrosion of the etching gas pipeline Download PDF

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TW202025292A
TW202025292A TW108145032A TW108145032A TW202025292A TW 202025292 A TW202025292 A TW 202025292A TW 108145032 A TW108145032 A TW 108145032A TW 108145032 A TW108145032 A TW 108145032A TW 202025292 A TW202025292 A TW 202025292A
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gas pipeline
etching gas
etching
extending portion
joint
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TW108145032A
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TWI770445B (en
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連增迪
黄允文
狄 吳
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大陸商中微半導體設備(上海)股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention discloses an air-intake pipe connecting device and an air-intake unit for plasma etching containing the same. The air-intake pipe connecting device includes a tubular body and a corrosion-resistant seal member disposed in the tubular body; the etching gas pipeline and the gas pipeline fittings respectively extend from the two ends of the tubular body and are connected, and the connection is surrounded and sealed by the corrosion-resistant seal; the two ends of the tubular body are respectively fixed with the etching gas pipeline and the gas pipeline fittings by welding. After adopting the present invention, water vapor contacts the corrosion-resistant seal member when entering the etching gas pipeline, and it will not touch the welded seam welded on both sides of the outside of the air-intake pipe connecting device, thus avoiding the corrosion of welded seam in the etching gas pipeline, extending the service life of the etching gas pipeline, effectively avoiding the metal contamination of the wafer caused by the corrosion of the etching gas pipeline, and improving the quality of the product.

Description

進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元Air intake pipeline connecting device and air intake unit for plasma etching containing same

本發明涉及電漿蝕刻技術領域,具體涉及一種進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元。The invention relates to the technical field of plasma etching, in particular to an air intake pipeline connecting device and an air intake unit for plasma etching containing the same.

現有電漿蝕刻技術中,在電感耦合電漿(ICP,Inductive Coupled Plasma)和電容耦合(CCP)型蝕刻機臺上往往會通入Cl2、COS、HBr、SiCl4等腐蝕性氣體對矽片(silicon)進行蝕刻。In the existing plasma etching technology, inductively coupled plasma (ICP, Inductive Coupled Plasma) and capacitive coupling (CCP) type etching machines are often introduced Cl2, COS, HBr, SiCl4 and other corrosive gases to the silicon wafer (silicon ) Perform etching.

這些腐蝕性氣體需要透過氣體管線(gas line)金屬管道進入反應腔體中。目前大多數氣體管線的材質使用SST316L等不銹鋼管材。在打開反應腔體(chamber)的時候,大氣中的水汽(water vapor)會進入暴露在外的SST316L管路中。These corrosive gases need to enter the reaction chamber through a gas line metal pipe. At present, most gas pipeline materials use stainless steel pipes such as SST316L. When the reaction chamber is opened, water vapor in the atmosphere will enter the exposed SST316L pipeline.

故每次開腔後,水汽會停留氣體管線中很難揮發掉。水汽遇到腐蝕性氣體就會腐蝕焊縫。研究表明,當水汽濃度超過0.5PPM時,金屬管道的焊縫處就會被腐蝕;當水汽濃度大於100PPM時,肉眼可見腐蝕點。焊縫的腐蝕,會將不銹鋼中成分中的Cr、Mn等重金屬帶出來,沉積在晶片(wafer)上,對晶片造成金屬污染。當前的通常做法是每次開完腔就需要更換氣體管線,維修成本高,耗時長。故目前尚沒有一種能夠有效避免水汽對氣體管線焊縫腐蝕的解決辦法。Therefore, after each cavity is opened, the water vapor will stay in the gas pipeline and is difficult to volatilize. Water vapor will corrode the weld when it encounters corrosive gas. Studies have shown that when the water vapor concentration exceeds 0.5PPM, the welds of the metal pipes will be corroded; when the water vapor concentration is greater than 100PPM, the corrosion points are visible to the naked eye. The corrosion of the weld will bring out the heavy metals such as Cr and Mn in the stainless steel and deposit them on the wafer, causing metal contamination to the wafer. The current common practice is to replace the gas pipeline every time the cavity is opened, which is costly and time-consuming to maintain. Therefore, there is no solution that can effectively avoid the corrosion of the welds of gas pipelines by water vapor.

本發明的目的是提供一種進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元,以解決現有技術中無法有效避免水汽對蝕刻氣體管線焊縫腐蝕的問題。The object of the present invention is to provide an air inlet pipe connecting device and an air inlet unit for plasma etching containing the same, so as to solve the problem that water vapor cannot effectively avoid corrosion of etching gas pipeline welds in the prior art.

為達到上述目的,本發明提供了一種進氣管路連接裝置,用於連接蝕刻氣體管線和蝕刻反應腔體上的氣體管路接頭,其中,進氣管路連接裝置包括管狀本體及設置在管狀本體內的耐腐蝕密封件;蝕刻氣體管線與氣體管路接頭分別從管狀本體的兩端伸入並進行對接,且對接處由耐腐蝕密封件進行環繞並密封;管狀本體的兩端分別與蝕刻氣體管線與氣體管路接頭透過焊接固定。In order to achieve the above objective, the present invention provides an air inlet pipe connection device for connecting an etching gas pipeline and a gas pipe joint on the etching reaction chamber, wherein the air inlet pipe connection device includes a tubular body and is arranged in the tubular body. Corrosion-resistant seals in the body; the etching gas pipeline and the gas pipeline joints extend from the two ends of the tubular body and are connected, and the joint is surrounded and sealed by the corrosion-resistant seal; the two ends of the tubular body are respectively connected with the etching The gas pipeline and the gas pipeline joint are fixed by welding.

上述的進氣管路連接裝置,其中,管狀本體內設置有用於嵌入耐腐蝕密封件的第一環形凹槽。In the above-mentioned air inlet pipe connecting device, the tubular body is provided with a first annular groove for embedding the corrosion-resistant seal.

上述的進氣管路連接裝置,其中,蝕刻氣體管線與氣體管路接頭對接處的外壁組合成用於嵌入耐腐蝕密封件的第二環形凹槽。In the above-mentioned air inlet pipe connecting device, the outer wall of the joint of the etching gas pipe and the gas pipe joint is combined into a second annular groove for embedding the corrosion-resistant seal.

上述的進氣管路連接裝置,其中,蝕刻氣體管線和氣體管路接頭在遠離對接處的外壁上分別設置有第一環形向外延伸部和第二環形向外延伸部;第一環形向外延伸部和第二環形向外延伸部之間組合成用於嵌入管狀本體的第三環形凹槽。In the above-mentioned air inlet pipe connecting device, the etching gas pipeline and the gas pipeline joint are respectively provided with a first annular outward extending portion and a second annular outward extending portion on the outer wall away from the butting place; the first annular shape The outward extending portion and the second annular outward extending portion are combined to form a third annular groove for inserting into the tubular body.

上述的進氣管路連接裝置,其中,管狀本體的外周分別與第一環形向外延伸部和第二環形向外延伸部的外周對齊;焊接所形成的焊縫位於管狀本體分別與第一環形向外延伸部和第二環形向外延伸部結合處的外周位置,以使焊縫遠離蝕刻氣體管線及氣體管路接頭的本體。In the above-mentioned air inlet pipe connecting device, the outer circumference of the tubular body is aligned with the outer circumference of the first annular outward extending portion and the second annular outward extending portion; the weld formed by welding is located on the tubular body and the first The outer peripheral position of the joint of the annular outward extension part and the second annular outward extension part, so that the weld is away from the etching gas pipeline and the body of the gas pipeline joint.

上述的進氣管路連接裝置,其中,管狀本體的兩側分別設置有第三環形向外延伸部和第四環形向外延伸部;第三環形向外延伸部和第四環形向外延伸部分別與第一環形向外延伸部和第二環形向外延伸部的外周對齊。In the above-mentioned air inlet pipe connecting device, a third annular outward extending portion and a fourth annular outward extending portion are respectively provided on both sides of the tubular body; the third annular outward extending portion and the fourth annular outward extending portion Do not align with the outer peripheries of the first annular outward extending portion and the second annular outward extending portion.

上述的進氣管路連接裝置,其中,管狀本體的材質為不銹鋼。In the above-mentioned air inlet pipe connecting device, the material of the tubular body is stainless steel.

上述的進氣管路連接裝置,其中,耐腐蝕密封件的材質為鐵氟龍或聚醯亞胺。In the above-mentioned air inlet pipe connecting device, the material of the corrosion-resistant seal is Teflon or polyimide.

上述的進氣管路連接裝置,其中,氣體管路接頭為VCR接頭。In the above-mentioned air inlet pipe connection device, the gas pipe joint is a VCR joint.

本發明還提供了一種用於電漿蝕刻的進氣單元,其中,該進氣單元包括:用於提供蝕刻氣體的蝕刻氣體源;與蝕刻氣體源相連的蝕刻氣體管線;設置在蝕刻反應腔體上的氣體管路接頭以及上述的進氣管路連接裝置,用於連接蝕刻氣體管線和氣體管路接頭。The present invention also provides an air intake unit for plasma etching, wherein the air intake unit includes: an etching gas source for supplying etching gas; an etching gas pipeline connected to the etching gas source; and is arranged in the etching reaction chamber The upper gas pipeline joint and the above-mentioned air inlet pipeline connection device are used to connect the etching gas pipeline and the gas pipeline joint.

相對於現有技術,本發明具有以下有益效果為: 在現有的電漿蝕刻製程中,採用本發明所提供的進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元後,水汽進入蝕刻氣體管線中所接觸到的是耐腐蝕密封件,不會接觸到焊接在進氣管路連接裝置外部兩側的焊縫,因而避免了原有蝕刻氣體管線焊縫的腐蝕,延長了蝕刻氣體管線的使用壽命,可以進一步有效避免由於蝕刻氣體管線腐蝕造成的晶片金屬污染,提高了產品的品質。Compared with the prior art, the present invention has the following beneficial effects: In the existing plasma etching process, after the air inlet pipe connection device provided by the present invention and the air inlet unit for plasma etching containing it are used, the water vapor enters the etching gas pipeline and touches the corrosion-resistant seal. The parts will not come into contact with the welds welded on both sides of the inlet pipe connection device, thus avoiding the corrosion of the welds of the original etching gas pipeline, prolonging the service life of the etching gas pipeline, and further effectively avoiding the etching gas The chip metal contamination caused by pipeline corrosion improves the quality of the product.

以下結合附圖透過具體實施例對本發明作進一步的描述,這些實施例僅用於說明本發明,並不是對本發明保護範圍的限制。The present invention will be further described below through specific embodiments with reference to the accompanying drawings. These embodiments are only used to illustrate the present invention and do not limit the protection scope of the present invention.

如第1圖所示,為蝕刻反應腔體6及其進氣單元22的一現有實施例的結構示意圖。氣體主管線內的蝕刻氣體中的一部分經分流器4分流後通過第一氣體管線1及第二氣體管線2進行輸送,再進而通過蝕刻反應腔體6的中央進氣口進入蝕刻反應腔體6內部;蝕刻氣體中的另一部分直接透過第三氣體管線3進行輸送,再進而透過蝕刻反應腔體6的周邊進氣口進入蝕刻反應腔體6內部。第一氣體管線1、第二氣體管線2及第三氣體管線3共同組成了蝕刻氣體管線15。用於輸送調諧氣體的調諧氣體管線5同時與第一氣體管線1、第二氣體管線2和第三氣體管線3連接,以將調諧氣體混入蝕刻氣體中,再進而輸送至蝕刻反應腔體6內。目前大多數的蝕刻氣體管線15往往使用方便易得,價格低廉的SST316L不銹鋼等不易被腐蝕的管材,但是這樣的設計也帶來了以下問題:當每次打開蝕刻反應腔體6後,與蝕刻反應腔體6直接相連的蝕刻氣體管線15將直接暴露在空氣中。特別是不同的管線在結合不需將兩個管線的端口部透過焊接連接並實現密封,但是高溫焊接過程會破壞不銹鋼材料內部結構,使得原來具有較高防腐蝕特性的不銹鋼變得易於被腐蝕。所以在蝕刻反應腔體6上的氣體管路接頭16與蝕刻氣體管線15的焊接處特別容易發生被蝕刻氣體腐蝕的現象,特別是空氣中的水汽進入的情況下,更易發生腐蝕。空氣中的水汽會停留在第1圖所示的第一氣體管線1、第二氣體管線2及第三氣體管線3中並很難揮發掉,水汽遇到蝕刻氣體中的腐蝕性氣體便會腐蝕蝕刻氣體管線15的焊縫。現有的解決辦法是及時更換第一氣體管線1、第二氣體管線2及第三氣體管線3,或者是將蝕刻氣體管線15的材質換成更耐腐蝕的哈氏合金不銹鋼,以延長管線的使用壽命。但目前的做法都存在大幅增加成本的問題,且哈氏合金不銹鋼無法適用於蝕刻氣體中存在CO等氣體的情況。As shown in FIG. 1, it is a schematic structural diagram of an existing embodiment of the etching reaction chamber 6 and the air inlet unit 22 thereof. Part of the etching gas in the main gas line is split by the flow divider 4 and then transported through the first gas line 1 and the second gas line 2, and then enters the etching reaction chamber 6 through the central air inlet of the etching reaction chamber 6 Inside; another part of the etching gas is directly transported through the third gas pipeline 3, and then enters the etching reaction chamber 6 through the peripheral air inlet of the etching reaction chamber 6. The first gas pipeline 1, the second gas pipeline 2 and the third gas pipeline 3 jointly constitute the etching gas pipeline 15. The tuning gas pipeline 5 for transporting tuning gas is simultaneously connected with the first gas pipeline 1, the second gas pipeline 2 and the third gas pipeline 3 to mix the tuning gas into the etching gas, and then transport it into the etching reaction chamber 6 . At present, most of the etching gas pipelines 15 are easy to use, cheap SST316L stainless steel and other pipes that are not easily corroded. However, this design also brings the following problems: every time the etching reaction chamber 6 is opened, The etching gas pipeline 15 directly connected to the reaction chamber 6 will be directly exposed to the air. In particular, different pipelines do not need to be welded to connect and seal the ports of the two pipelines when they are combined, but the high-temperature welding process will destroy the internal structure of the stainless steel material, making the stainless steel with high corrosion resistance characteristics easy to be corroded. Therefore, the welding place between the gas pipeline joint 16 and the etching gas pipeline 15 on the etching reaction chamber 6 is particularly prone to be corroded by the etching gas, especially when the water vapor in the air enters, it is more prone to corrosion. The water vapor in the air will stay in the first gas line 1, the second gas line 2 and the third gas line 3 shown in Figure 1 and is difficult to volatilize. The water vapor will corrode when it encounters the corrosive gas in the etching gas The weld of the gas line 15 is etched. The existing solution is to replace the first gas pipeline 1, the second gas pipeline 2 and the third gas pipeline 3 in time, or change the material of the etching gas pipeline 15 to a more corrosion-resistant Hastelloy stainless steel to extend the use of the pipeline life. However, the current practice has the problem of greatly increasing the cost, and Hastelloy stainless steel cannot be applied to the situation where CO and other gases are present in the etching gas.

在上述實施例的基礎上,本發明提供了一種進氣管路連接裝置,用於連接蝕刻氣體管線15和蝕刻反應腔體6中央進氣口和周邊進氣口上的氣體管路接頭16。如第2圖所示,為本發明進氣管路連接裝置用於連接蝕刻氣體管線15和氣體管路接頭16時的結構示意圖,該圖同時顯示了管路連接時的截面圖和外觀圖。進氣管路連接裝置包括管狀本體17及設置在管狀本體17內的耐腐蝕密封件18;蝕刻氣體管線15與氣體管路接頭16分別從管狀本體17的兩端伸入並進行對接,且對接處由耐腐蝕密封件18進行環繞並密封;管狀本體17的兩端分別與蝕刻氣體管線15與氣體管路接頭16透過焊接固定,即在管狀本體17兩側分別與氣體管路接頭16和蝕刻氣體管線15各形成一圈焊縫19。透過這種設計,實現了蝕刻氣體反應腔體打開時,與空氣接觸的蝕刻氣體管線15沒有焊縫,從而防止蝕刻氣體管線15被腐蝕,延長了蝕刻氣體管線15的使用壽命。在該實施例中,蝕刻反應腔體6由絕緣窗體7、腔體側壁、腔體底壁等組成,內設靜電卡盤8,靜電卡盤8上可放置晶片9,腔體側壁上設置有晶片9轉移通道10。排氣口(圖中未示出)與真空裝置連接,將蝕刻反應腔體6製造成真空環境,絕緣窗體7上方的線圈11通以射頻能量,透過絕緣窗體7耦合,在蝕刻反應腔體6中形成電漿,對靜電卡盤8上的晶片9進行蝕刻。蝕刻反應腔體6的側壁上設置有側壁內襯12,使得腔室側壁不再直接接觸電漿,免受電漿的轟擊,並且使清洗和更換更為方便。因而使用了本發明所提供的進氣管路連接裝置後,可以進一步有效避免由於蝕刻氣體管線15腐蝕造成的晶片9金屬污染,提高了產品的品質。On the basis of the above-mentioned embodiments, the present invention provides an air inlet pipe connection device for connecting the etching gas pipeline 15 and the gas pipe joint 16 on the central air inlet and the peripheral air inlet of the etching reaction chamber 6. As shown in Figure 2, it is a schematic diagram of the structure of the gas inlet pipe connecting device of the present invention when it is used to connect the etching gas pipe 15 and the gas pipe joint 16. This figure also shows a cross-sectional view and an appearance view when the pipe is connected. The air inlet pipe connection device includes a tubular body 17 and a corrosion-resistant seal 18 arranged in the tubular body 17; the etching gas pipeline 15 and the gas pipeline joint 16 respectively extend from the two ends of the tubular body 17 and are connected to each other. The two ends of the tubular body 17 are respectively surrounded and sealed by a corrosion-resistant seal 18; the two ends of the tubular body 17 are respectively fixed to the etching gas line 15 and the gas line joint 16 by welding, that is, the two sides of the tubular body 17 are respectively connected to the gas line joint 16 and the etching The gas pipelines 15 each form a circle of welds 19. Through this design, it is realized that when the etching gas reaction chamber is opened, the etching gas pipeline 15 in contact with the air has no welds, thereby preventing the etching gas pipeline 15 from being corroded and extending the service life of the etching gas pipeline 15. In this embodiment, the etching reaction chamber 6 is composed of an insulating window 7, a side wall of the cavity, a bottom wall of the cavity, etc., and an electrostatic chuck 8 is arranged inside. A wafer 9 can be placed on the electrostatic chuck 8. There are wafer 9 transfer channels 10. The exhaust port (not shown in the figure) is connected to a vacuum device to make the etching reaction chamber 6 into a vacuum environment. The coil 11 above the insulating window 7 is coupled with radio frequency energy through the insulating window 7, and the etching reaction chamber Plasma is formed in the body 6, and the wafer 9 on the electrostatic chuck 8 is etched. The side wall of the etching reaction chamber 6 is provided with a side wall lining 12 so that the side wall of the chamber no longer directly contacts the plasma, avoids the bombardment of the plasma, and facilitates cleaning and replacement. Therefore, after the air inlet pipe connecting device provided by the present invention is used, the metal contamination of the wafer 9 caused by the corrosion of the etching gas pipeline 15 can be further effectively avoided, and the quality of the product is improved.

在該實施例中,為實現對耐腐蝕密封件的限位,可以在管狀本體17內設置有用於嵌入耐腐蝕密封件18的第一環形凹槽。為實現同樣的目的,也可以在蝕刻氣體管線15與氣體管路接頭16對接處的外壁組合成第二環形凹槽,用以嵌入耐腐蝕密封件18。In this embodiment, in order to limit the position of the corrosion-resistant sealing element, a first annular groove for embedding the corrosion-resistant sealing element 18 may be provided in the tubular body 17. In order to achieve the same purpose, the outer wall of the joint between the etching gas pipeline 15 and the gas pipeline joint 16 can also be combined to form a second annular groove for embedding the corrosion-resistant seal 18.

如第3圖所示,為了實現對管狀本體17的限位,蝕刻氣體管線15和氣體管路接頭16在遠離對接處的外壁上分別設置有第一環形向外延伸部151和第二環形向外延伸部161;第一環形向外延伸部151和第二環形向外延伸部161之間組合成第三環形凹槽,用以嵌入管狀本體17。As shown in Figure 3, in order to limit the position of the tubular body 17, the etching gas pipeline 15 and the gas pipeline joint 16 are respectively provided with a first annular outward extension 151 and a second annular extension on the outer wall away from the docking location. The outward extending portion 161; the first annular outward extending portion 151 and the second annular outward extending portion 161 are combined to form a third annular groove for inserting into the tubular body 17.

在上述實施例中,為了避免了不銹鋼管道受熱破壞內部結構,並減少腐蝕發生,管狀本體17的外周分別與第一環形向外延伸部151和第二環形向外延伸部161的外周對齊;焊接所形成的焊縫位於管狀本體17分別與第一環形向外延伸部151和第二環形向外延伸部161結合處的外周位置,以使焊縫遠離蝕刻氣體管線15及氣體管路接頭16的本體,從而避免高溫焊接過程會破壞蝕刻氣體管線15和氣體管路接頭16的不銹鋼材料內部結構,使得原來具有較高防腐蝕特性的不銹鋼變得易於被腐蝕。In the above embodiment, in order to avoid damage to the internal structure of the stainless steel pipe by heating and reduce the occurrence of corrosion, the outer circumference of the tubular body 17 is respectively aligned with the outer circumference of the first annular outward extending portion 151 and the second annular outward extending portion 161; The weld formed by welding is located at the outer periphery of the joint of the tubular body 17 with the first annular outward extending portion 151 and the second annular outward extending portion 161 respectively, so as to keep the weld away from the etching gas pipeline 15 and the gas pipeline joint The body of 16 prevents the high-temperature welding process from destroying the internal structure of the stainless steel material of the etching gas pipeline 15 and the gas pipeline joint 16, so that the stainless steel with high corrosion resistance becomes easy to be corroded.

進一步地,為了減少管狀本體17的厚度以降低管狀本體17的材料成本,管狀本體17的兩側分別設置有第三環形向外延伸部171和第四環形向外延伸部172;第三環形向外延伸部171和第四環形向外延伸部172分別與第一環形向外延伸部151和第二環形向外延伸部161的外周對齊,從而能夠在滿足焊縫遠離蝕刻氣體管線15及氣體管路接頭16的本體的前提下,盡可能地降低管狀本體17不必要的厚度。Further, in order to reduce the thickness of the tubular body 17 and reduce the material cost of the tubular body 17, a third annular outward extending portion 171 and a fourth annular outward extending portion 172 are respectively provided on both sides of the tubular body 17; The outer extending portion 171 and the fourth annular outward extending portion 172 are respectively aligned with the outer peripheries of the first annular outward extending portion 151 and the second annular outward extending portion 161, so as to satisfy that the welding seam is far away from the etching gas pipeline 15 and the gas On the premise of the body of the pipe joint 16, the unnecessary thickness of the tubular body 17 is reduced as much as possible.

在該實施例中,進氣管路連接裝置的管狀本體17為金屬材質,具體可以使用各種不銹鋼材質,特別是價格低廉的SST316L不銹鋼管材。進氣管路連接裝置的耐腐蝕密封件18的材質為鐵氟龍或聚醯亞胺,或者其它能夠同時實現耐腐蝕和密封功能的材料。本實施例所使用的鐵氟龍是由四氟乙烯經聚合而成的高分子化合物,具有優良的化學穩定性、耐腐蝕性,經久耐用,密封性能可靠。蝕刻反應腔體6上的氣體管路接頭16常見的為VCR接頭。VCR接頭又稱金屬墊片面密封接頭,英文名為:Metal Gasket Face Seal Fittings, 通常應用於管路的連接。In this embodiment, the tubular body 17 of the air intake pipe connecting device is made of metal, and specifically, various stainless steel materials can be used, especially low-cost SST316L stainless steel pipes. The material of the corrosion-resistant sealing member 18 of the air inlet pipe connection device is Teflon or polyimide, or other materials that can achieve both corrosion resistance and sealing functions. The Teflon used in this embodiment is a polymer compound formed by polymerization of tetrafluoroethylene, which has excellent chemical stability, corrosion resistance, durability, and reliable sealing performance. The gas pipeline joint 16 on the etching reaction chamber 6 is usually a VCR joint. VCR fittings are also called metal gasket face seal fittings, and the English name is Metal Gasket Face Seal Fittings, which are usually used in the connection of pipelines.

在該實施例中,水汽進入蝕刻氣體管線15中所接觸到的是耐腐蝕密封件18,不會接觸到焊接在進氣管路連接裝置外部兩側的焊縫,因而避免了原有蝕刻氣體管線15焊縫的腐蝕。就具體結構而言,外部的管狀本體17的兩側分別與氣體管路接頭16和蝕刻氣體管線15的內徑相同,內部的耐腐蝕密封件18可根據氣體管路接頭16和蝕刻氣體管線15對接處的具體結構設計,只要能實現密封功能即可。例如氣體管路接頭16和蝕刻氣體管線15對接處形成環形凹槽結構,則耐腐蝕密封件18為設置在管狀本體17內部,與環形凹槽結構配合的環形凸起結構。由此可知,本發明所提供的進氣管路連接裝置可以根據具體的現場結構情況設計相應的結構,以實現水汽無法接觸到焊縫的目的。In this embodiment, the corrosion-resistant seal 18 that water vapor enters into the etching gas pipeline 15 will not touch the welds welded on both sides of the inlet pipe connection device, thus avoiding the original etching gas. Corrosion of the weld of pipeline 15. In terms of specific structure, the two sides of the outer tubular body 17 are the same as the inner diameters of the gas pipeline joint 16 and the etching gas pipeline 15 respectively, and the internal corrosion-resistant seal 18 can be based on the gas pipeline joint 16 and the etching gas pipeline 15 The specific structure design of the butt joint should only be able to realize the sealing function. For example, an annular groove structure is formed at the joint of the gas pipeline joint 16 and the etching gas pipeline 15, and the corrosion-resistant seal 18 is an annular convex structure arranged inside the tubular body 17 and matched with the annular groove structure. It can be seen from this that the air intake pipe connecting device provided by the present invention can design a corresponding structure according to the specific site structure, so as to achieve the purpose of preventing water vapor from contacting the weld.

進一步地,本發明還提供了一種用於電漿蝕刻的進氣單元22,該進氣單元22包括:用於提供蝕刻氣體的蝕刻氣體源;與蝕刻氣體源相連的蝕刻氣體管線15;設置在蝕刻反應腔體6上的氣體管路接頭16以及上述的進氣管路連接裝置,用於連接蝕刻氣體管線15和氣體管路接頭16。在該實施例中,蝕刻氣體管線15上設置有分流器4,用於將蝕刻氣體管線15分為多個支路。蝕刻氣體管線15還與調諧氣體管線5相連,用於向蝕刻氣體管線15內混入調諧氣體。在現有的電漿蝕刻製程中,可以透過簡單的管線改造,在原有的蝕刻氣體管線15和蝕刻反應腔體6上的氣體管路接頭16之間增加本發明所提供的進氣管路連接裝置即可獲得本發明的進氣單元22。可以有效避免原有蝕刻氣體管線15焊縫因水汽的進入所導致的腐蝕,延長了蝕刻氣體管線15的使用週期,有效避免由於蝕刻氣體管線15腐蝕所造成的晶片9金屬污染,提高了成品的良率。Further, the present invention also provides an air intake unit 22 for plasma etching. The air intake unit 22 includes: an etching gas source for providing etching gas; an etching gas pipeline 15 connected to the etching gas source; The gas pipe joint 16 on the etching reaction chamber 6 and the above-mentioned air inlet pipe connection device are used to connect the etching gas pipe 15 and the gas pipe joint 16. In this embodiment, a splitter 4 is provided on the etching gas pipeline 15 for dividing the etching gas pipeline 15 into multiple branches. The etching gas pipeline 15 is also connected to the tuning gas pipeline 5 for mixing tuning gas into the etching gas pipeline 15. In the existing plasma etching process, a simple pipeline modification can be used to add the gas inlet pipe connection device provided by the present invention between the original etching gas pipeline 15 and the gas pipeline joint 16 on the etching reaction chamber 6 Then, the air intake unit 22 of the present invention can be obtained. It can effectively avoid the corrosion of the welding seam of the original etching gas pipeline 15 caused by the entry of water vapor, prolong the service cycle of the etching gas pipeline 15, effectively avoid the metal contamination of the wafer 9 caused by the corrosion of the etching gas pipeline 15, and improve the finished product Yield rate.

為了對蝕刻氣體的通入進行有效地控制,可以在蝕刻氣體管線15上設置用於開啟和關閉蝕刻氣體管線15的閥門13,或者設置用於調節蝕刻氣體流量的流量調節裝置,或者同時設置閥門13和流量調節裝置。當然地,可以選擇氣動調節閥來同時實現管路的啟閉和蝕刻氣體流量的調節,使管線的結構更為簡單化。更進一步地,可以將閥門13和流量調節裝置併入現有的DCS控制系統中,以實現更為方便的操作和監測。為了對蝕刻氣體流量的控制,也可以在蝕刻氣體管線15的本體上進行改造,例如在蝕刻氣體管線15上設置變徑結構14,用於限制蝕刻氣體流量。該變徑結構14可以為異徑管,可以是同心大小頭或偏心大小頭,可以透過沖壓成形獲得,以實現固定的流量限制。In order to effectively control the passage of the etching gas, a valve 13 for opening and closing the etching gas line 15 can be provided on the etching gas line 15, or a flow adjustment device for adjusting the flow of the etching gas, or a valve can be provided at the same time. 13 and flow regulating device. Of course, a pneumatic control valve can be selected to simultaneously realize the opening and closing of the pipeline and the adjustment of the etching gas flow rate, so that the structure of the pipeline is simplified. Furthermore, the valve 13 and the flow regulating device can be incorporated into the existing DCS control system to achieve more convenient operation and monitoring. In order to control the etching gas flow rate, the body of the etching gas pipeline 15 can also be modified. For example, a diameter reducing structure 14 is provided on the etching gas pipeline 15 to limit the etching gas flow rate. The diameter reducing structure 14 may be a reducing tube, a concentric or eccentric orifice, which can be obtained by stamping to achieve a fixed flow restriction.

第4圖為將上述進氣單元22用於電漿處理設備的一實施例結構示意圖,設備包括蝕刻氣體反應腔體、本發明所提供的進氣單元22和用於將反應副產物從蝕刻反應腔體6內排出的抽氣單元。蝕刻氣體反應腔體包括由金屬材料製成的大致為圓柱形的反應腔側壁,反應腔側壁上方設置一氣體噴淋裝置20,氣體噴淋裝置20透過氣體混合裝置21與本發明所提供的進氣單元22相連。 在該實施例中,氣體管路接頭16一端與氣體混合裝置21相連,另一端透過本發明所提供的進氣管路連接裝置與蝕刻氣體管線15相連。Figure 4 is a schematic structural diagram of an embodiment of using the above-mentioned air intake unit 22 for plasma processing equipment. The equipment includes an etching gas reaction chamber, the air intake unit 22 provided by the present invention, and the reaction by-products from the etching reaction. The air extraction unit discharged from the cavity 6. The etching gas reaction chamber includes a substantially cylindrical reaction chamber side wall made of metal material. A gas spray device 20 is arranged above the reaction chamber side wall. The gas spray device 20 penetrates the gas mixing device 21 and the gas inlet provided by the present invention. The air unit 22 is connected. In this embodiment, one end of the gas pipeline connector 16 is connected to the gas mixing device 21, and the other end is connected to the etching gas pipeline 15 through the inlet pipeline connection device provided by the present invention.

進氣單元22所提供的蝕刻氣體經過氣體噴淋裝置20進入蝕刻反應腔體6,蝕刻反應腔體6的下方設置一支撐靜電卡盤8的基座23,靜電卡盤8上用於放置待處理晶片9,射頻功率源24的射頻功率施加到基座23,在蝕刻反應腔內產生將反應氣體解離為電漿的電場,電漿中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子,上述活性粒子可以和待處理晶片9的表面發生多種物理和化學反應,使得晶片9表面的形貌發生改變,即完成蝕刻過程。蝕刻反應腔體6的下方還設置一排氣泵25作為抽氣單元,用於將反應副產物排出真空反應腔內。使用本發明所提供的離子體處理設備,能夠有效避免因蝕刻氣體反應腔體打開而導致的蝕刻氣體管線15焊縫腐蝕的問題,且對各種蝕刻氣體都能夠兼容。The etching gas provided by the air inlet unit 22 enters the etching reaction chamber 6 through the gas spray device 20. A base 23 supporting the electrostatic chuck 8 is provided under the etching reaction chamber 6 and the electrostatic chuck 8 is used to place the When processing the wafer 9, the RF power of the RF power source 24 is applied to the susceptor 23, and an electric field is generated in the etching reaction chamber to dissociate the reaction gas into plasma. The plasma contains a large number of electrons, ions, excited atoms, molecules and Active particles such as free radicals, the above-mentioned active particles can have various physical and chemical reactions with the surface of the wafer 9 to be processed, so that the topography of the surface of the wafer 9 is changed, that is, the etching process is completed. An exhaust pump 25 is also provided under the etching reaction chamber 6 as a pumping unit for exhausting reaction byproducts into the vacuum reaction chamber. Using the ion treatment equipment provided by the present invention can effectively avoid the problem of corrosion of the welding seam of the etching gas pipeline 15 caused by the opening of the etching gas reaction chamber, and it is compatible with various etching gases.

綜上,在現有的電漿蝕刻製程中,採用本發明所提供的進氣管路連接裝置及含其的用於電漿蝕刻的進氣單元後,水汽進入蝕刻氣體管線中所接觸到的是耐腐蝕密封件,不會接觸到焊接在進氣管路連接裝置外部兩側的焊縫,因而避免了原有蝕刻氣體管線焊縫的腐蝕,延長了蝕刻氣體管線的使用壽命,可以進一步有效避免由於蝕刻氣體管線腐蝕造成的晶片金屬污染,提高了產品的品質。In summary, in the existing plasma etching process, after the air inlet pipe connection device provided by the present invention and the air inlet unit for plasma etching containing it are used, what the water vapor enters into the etching gas pipeline is Corrosion-resistant seals will not touch the welds welded on the outer sides of the inlet pipe connection device, thus avoiding the corrosion of the welds of the original etching gas pipeline, extending the service life of the etching gas pipeline, and further effectively avoiding The metal contamination of the wafer caused by the corrosion of the etching gas pipeline improves the quality of the product.

儘管本發明的內容已經透過上述較佳的實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域具有通常知識者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be obvious after reading the above content by those with ordinary knowledge in the field. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

1:第一氣體管線 2:第二氣體管線 3:第三氣體管線 4:分流器 5:調諧氣體管線 6:蝕刻反應腔體 7:絕緣窗體 8:靜電卡盤 9:晶片 10:轉移通道 11:線圈 12:側壁內襯 13:閥門 14:變徑結構 15:蝕刻氣體管線 151:第一環形向外延伸部 16:氣體管路接頭 161:第二環形向外延伸部 17:管狀本體 171:第三環形向外延伸部 172:第四環形向外延伸部 18:耐腐蝕密封件 19、29:焊縫 20:氣體噴淋裝置 21:氣體混合裝置 22:進氣單元 23:基座 24:射頻功率源 25:排氣泵1: The first gas pipeline 2: The second gas pipeline 3: The third gas pipeline 4: shunt 5: Tuning gas pipeline 6: Etching the reaction chamber 7: Insulation window 8: Electrostatic chuck 9: chip 10: Transfer channel 11: coil 12: Side wall lining 13: Valve 14: Variable diameter structure 15: Etching gas pipeline 151: First annular outward extension 16: Gas pipeline joint 161: Second annular outward extension 17: Tubular body 171: Third ring outward extension 172: Fourth annular outward extension 18: Corrosion-resistant seal 19, 29: Weld 20: Gas spray device 21: Gas mixing device 22: intake unit 23: Pedestal 24: RF power source 25: Exhaust pump

第1圖為現有的蝕刻反應腔體及其進氣單元的結構示意圖; 第2圖為本發明進氣管路連接裝置一實施例的結構示意圖; 第3圖為本發明進氣管路連接裝置另一實施例的結構示意圖; 第4圖為本發明所提供的進氣單元用於電漿處理設備的結構示意圖。Figure 1 is a schematic diagram of the structure of the existing etching reaction chamber and its air inlet unit; Figure 2 is a schematic structural diagram of an embodiment of the air intake pipe connecting device of the present invention; Figure 3 is a schematic structural view of another embodiment of the air intake pipe connecting device of the present invention; Figure 4 is a schematic structural diagram of the air intake unit provided by the present invention used in plasma processing equipment.

15:蝕刻氣體管線 15: Etching gas pipeline

16:氣體管路接頭 16: Gas pipeline joint

17:管狀本體 17: Tubular body

18:耐腐蝕密封件 18: Corrosion-resistant seal

19:焊縫 19: Weld

Claims (10)

一種進氣管路連接裝置,用於連接一蝕刻氣體管線和一蝕刻反應腔體上的一氣體管路接頭,其中該進氣管路連接裝置包括一管狀本體及設置在該管狀本體內的一耐腐蝕密封件;該蝕刻氣體管線與該氣體管路接頭分別從該管狀本體的兩端伸入並進行對接,且對接處由該耐腐蝕密封件進行環繞並密封;該管狀本體的兩端分別與該蝕刻氣體管線與該氣體管路接頭透過焊接固定。An air inlet pipe connecting device is used to connect an etching gas pipeline and a gas pipe joint on an etching reaction chamber, wherein the air inlet pipe connecting device includes a tubular body and a pipe arranged in the tubular body. Corrosion-resistant seal; the etching gas pipeline and the gas pipeline joint respectively extend from the two ends of the tubular body and are connected, and the joint is surrounded and sealed by the corrosion-resistant seal; the two ends of the tubular body are respectively The joint with the etching gas pipeline and the gas pipeline is fixed by welding. 如申請專利範圍第1項所述的進氣管路連接裝置,其中該管狀本體內設置有用於嵌入該耐腐蝕密封件的一第一環形凹槽。According to the air inlet pipe connection device described in the first item of the scope of patent application, a first annular groove for embedding the corrosion-resistant seal is provided in the tubular body. 如申請專利範圍第1項所述的進氣管路連接裝置,其中該蝕刻氣體管線與該氣體管路接頭對接處的外壁組合成用於嵌入該耐腐蝕密封件的一第二環形凹槽。As described in the first item of the scope of patent application, the outer wall of the joint of the etching gas pipeline and the gas pipeline joint is combined to form a second annular groove for embedding the corrosion-resistant seal. 如申請專利範圍第1項所述的進氣管路連接裝置,其中該蝕刻氣體管線和該氣體管路接頭在遠離對接處的外壁上分別設置有一第一環形向外延伸部和一第二環形向外延伸部;該第一環形向外延伸部和該第二環形向外延伸部之間組合成用於嵌入該管狀本體的一第三環形凹槽。As described in the first item of the scope of patent application, the air inlet pipeline connection device, wherein the etching gas pipeline and the gas pipeline joint are respectively provided with a first annular outward extending portion and a second outer wall on the outer wall away from the joint. Annular outward extending portion; the first annular outward extending portion and the second annular outward extending portion are combined to form a third annular groove for embedding in the tubular body. 如申請專利範圍第4項所述的進氣管路連接裝置,其中該管狀本體的外周分別與該第一環形向外延伸部和該第二環形向外延伸部的外周對齊;焊接所形成的一焊縫位於該管狀本體分別與該第一環形向外延伸部和該第二環形向外延伸部結合處的外周位置,以使該焊縫遠離該蝕刻氣體管線及該氣體管路接頭的本體。According to the air intake pipe connecting device described in claim 4, the outer periphery of the tubular body is respectively aligned with the outer periphery of the first annular outward extending portion and the second annular outward extending portion; formed by welding A weld is located at the outer periphery of the joint of the tubular body with the first annular outward extending portion and the second annular outward extending portion, so that the weld is away from the etching gas pipeline and the gas pipeline joint The body. 如申請專利範圍第5項所述的進氣管路連接裝置,其中該管狀本體的兩側分別設置有一第三環形向外延伸部和一第四環形向外延伸部;該第三環形向外延伸部和該第四環形向外延伸部分別與該第一環形向外延伸部和該第二環形向外延伸部的外周對齊。According to the air inlet pipe connection device described in the fifth item of the scope of patent application, a third annular outward extending portion and a fourth annular outward extending portion are respectively provided on both sides of the tubular body; the third annular outward extending portion The extending portion and the fourth annular outward extending portion are respectively aligned with the outer peripheries of the first annular outward extending portion and the second annular outward extending portion. 如申請專利範圍第1項所述的進氣管路連接裝置,其中該管狀本體的材質為不銹鋼。In the air inlet pipe connecting device described in the first item of the scope of patent application, the material of the tubular body is stainless steel. 如申請專利範圍第1項所述的進氣管路連接裝置,其中該耐腐蝕密封件的材質為鐵氟龍或聚醯亞胺。As described in the first item of the scope of patent application, the air inlet pipe connection device, wherein the material of the corrosion-resistant seal is Teflon or polyimide. 如申請專利範圍第1項所述的進氣管路連接裝置,其中該氣體管路接頭為VCR接頭。In the air inlet pipe connection device described in item 1 of the scope of patent application, the gas pipe joint is a VCR joint. 一種用於電漿蝕刻的進氣單元,其中該進氣單元包括:用於提供蝕刻氣體的一蝕刻氣體源;與該蝕刻氣體源相連的一蝕刻氣體管線;設置在一蝕刻反應腔體上的一氣體管路接頭以及如申請專利範圍第1項至第9項中任意一項所述的進氣管路連接裝置,用於連接該蝕刻氣體管線和該氣體管路接頭。An air intake unit for plasma etching, wherein the air intake unit includes: an etching gas source for supplying etching gas; an etching gas pipeline connected to the etching gas source; A gas pipeline joint and the gas inlet pipeline connection device according to any one of items 1 to 9 in the scope of patent application are used to connect the etching gas pipeline and the gas pipeline joint.
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