TW202025248A - Vapor phase deposition apparatus and method for manufacturing epitaxial silicon wafer - Google Patents

Vapor phase deposition apparatus and method for manufacturing epitaxial silicon wafer Download PDF

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TW202025248A
TW202025248A TW108141547A TW108141547A TW202025248A TW 202025248 A TW202025248 A TW 202025248A TW 108141547 A TW108141547 A TW 108141547A TW 108141547 A TW108141547 A TW 108141547A TW 202025248 A TW202025248 A TW 202025248A
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susceptor
silicon wafer
fitting
vapor deposition
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楢原和宏
辻雅之
胡盛珀
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日商Ｓｕｍｃｏ股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract

To provide a vapor phase deposition apparatus capable of suppressing the position deviation of a susceptor to a susceptor supporting member during vapor phase deposition process. A vapor phase deposition apparatus, includes a disc-shaped susceptor 3; and a susceptor supporting member, supporting and rotating the susceptor3; wherein, a plurality of fitting grooves 32 are provided in the susceptor 3, a plurality of supporting pins 53 respectively fitted in the plurality of fitting grooves 32 are provided in the susceptor supporting member; in the fitting grooves 32, provided are an inclination part 321B moving said supporting pins 53 relatively to the fitting grooves 32 in the circumferential direction of the susceptor 3 while the supporting pins 53 are formed in a state of being in contact by the weight of the susceptor 3 itself, and a positioning part 321A positioning the supporting pins 53 relatively moved by the inclination part 321B to a specified position in the circumferential direction, and the inclination part 321B and the positioning part 321A are continually formed in a radial direction of the susceptor 3.

Description

氣相沈積裝置及磊晶矽晶圓的製造方法Vapor deposition device and manufacturing method of epitaxial silicon wafer

本發明係有關於氣相沈積裝置及磊晶矽晶圓的製造方法。The invention relates to a vapor deposition device and a method for manufacturing an epitaxial silicon wafer.

氣相沈積裝置中，裝載矽晶圓的圓板狀基座，由基座支撐構件從下方支撐，與基座支撐構件一起旋轉。研討抑制在這樣的構成中基座支撐構件的旋轉中心與基座中心的位置偏離(例如，參照專利文獻1)。In the vapor deposition apparatus, the disc-shaped susceptor on which the silicon wafer is loaded is supported from below by the susceptor support member and rotates together with the susceptor support member. It is considered to suppress the positional deviation between the rotation center of the base support member and the base center in such a structure (for example, refer to Patent Document 1).

專利文獻1的氣相沈積裝置中，在基座下面，設置圓環狀的環狀溝。環狀溝沿著基座的徑方向的縱剖面形狀，形成圓弧狀。基座支撐構件中，嵌入環狀溝內的3個頭部，沿著基座的圓周方向等間隔設置。頭部的前端，形成半徑比環狀溝的圓弧半徑小的球面狀。 根據如此的環狀溝及頭部的構造，以基座的自重移動頭部與環狀溝的鄰接部分至環狀溝底部，抑制基座支撐構件的旋轉中心與基座中心的位置偏離。 [先行技術文獻] [專利文獻]In the vapor deposition apparatus of Patent Document 1, an annular groove is provided under the susceptor. The annular groove is formed in an arc shape along the longitudinal cross-sectional shape of the base in the radial direction. In the base support member, three heads embedded in the annular groove are arranged at equal intervals along the circumferential direction of the base. The tip of the head has a spherical shape with a radius smaller than the arc radius of the annular groove. According to the structure of the ring-shaped groove and the head, the adjacent portion of the head and the ring-shaped groove is moved to the bottom of the ring-shaped groove by the weight of the base, and the positional deviation of the rotation center of the base support member and the center of the base is suppressed. [Advanced Technical Literature] [Patent Literature]

[專利文獻1] 專利第4575262號公報[Patent Document 1] Patent No. 4755262

[發明所欲解決的課題][Problems to be solved by the invention]

但是，專利文獻1記載的構成中，對基座的升溫降溫處理時基座膨脹收縮的話，環狀溝的底部對頭部往基座的徑方向外側及內側偏離，恐怕基座支撐構件的頭部從環狀溝露出。這樣的情況下，基座從所希望的位置偏離，基座的中心與基座支撐構件的旋轉軸在偏離的狀態下進行氣相沈積處理，恐怕不能達到磊晶膜的厚度均勻化。However, in the structure described in Patent Document 1, if the base expands and contracts during the heating and cooling treatment of the base, the bottom of the annular groove and the head part deviate from the radial direction outside and inside of the base, and there is a possibility that the head of the base support member The part is exposed from the annular groove. In such a case, the susceptor is deviated from the desired position, and the center of the susceptor is deviated from the rotation axis of the susceptor support member, and the vapor deposition process is performed, and the thickness of the epitaxial film may not be uniform.

本發明的目的在於提供可以抑制氣相沈積處理時基座對基座支撐構件的位置偏離之氣相沈積裝置及磊晶矽晶圓的製造方法。 [用以解決課題的手段]The object of the present invention is to provide a vapor deposition apparatus and an epitaxial silicon wafer manufacturing method that can suppress the positional deviation of the susceptor to the susceptor support member during the vapor deposition process. [Means to solve the problem]

本發明的氣相沈積裝置，在矽晶圓上形成磊晶膜，其特徵在於包括：圓板狀的基座，裝載上述矽晶圓；以及基座支撐構件，支撐旋轉上述基座；在上述基座及上述基座支撐構件中的一方，設置複數嵌合溝，在另一方，設置分別嵌入上述複數嵌合溝的複數嵌合凸部；上述嵌合溝中，設置：傾斜部，形成對上述基座中的上述矽晶圓的裝載面傾斜，以上述基座的自重維持上述嵌合凸部接觸的狀態，使上述嵌合凸部對上述嵌合溝往上述基座的圓周方向相對移動；以及位置決定部，決定由上述傾斜部相對移動的上述嵌合凸部的位置在上述圓周方向的特定位置上；上述傾斜部及上述位置決定部，往上述基座的徑方向連續形成。The vapor deposition apparatus of the present invention, which forms an epitaxial film on a silicon wafer, is characterized by comprising: a disc-shaped susceptor for loading the silicon wafer; and a susceptor supporting member for supporting and rotating the susceptor; One of the base and the base supporting member is provided with a plurality of fitting grooves, and on the other, a plurality of fitting convex portions are respectively fitted into the plurality of fitting grooves; in the fitting groove, there are provided: inclined portions to form a pair The mounting surface of the silicon wafer in the susceptor is inclined, and the mating protrusions are maintained in contact with the mating protrusions by the weight of the susceptor, and the mating protrusions are moved relative to the mating groove in the circumferential direction of the susceptor And a position determining portion that determines the position of the fitting convex portion that is relatively moved by the inclined portion at a specific position in the circumferential direction; the inclined portion and the position determining portion are continuously formed in the radial direction of the base.

根據本發明，嵌合凸部由於基座的自重向嵌合溝的傾斜部相對移動，由位置決定部決定在基座圓周方向的特定位置上的位置。又，因為傾斜部及位置決定部往基座的徑方向連續形成，基座的熱膨脹前後，決定嵌合凸部的位置在基座圓周方向的特定位置上。因此，可以抑制氣相沈積處理時基座對基座支撐構件的位置偏離。According to the present invention, the fitting convex portion moves relative to the inclined portion of the fitting groove due to the own weight of the base, and the position of the fitting convex portion is determined at a specific position in the circumferential direction of the base by the position determining portion. In addition, because the inclined portion and the position determining portion are continuously formed in the radial direction of the base, before and after the thermal expansion of the base, the position of the fitting convex portion is determined to be a specific position in the circumferential direction of the base. Therefore, the positional deviation of the susceptor to the susceptor supporting member during the vapor deposition process can be suppressed.

本發明的氣相沈積裝置中，上述嵌合凸部中與上述傾斜部的接觸部分，理想是形成凸曲面狀。In the vapor deposition apparatus of the present invention, the contact portion of the fitting convex portion with the inclined portion is preferably formed in a convex curved shape.

根據本發明，可以抑制由於嵌合凸部對傾斜部的相對移動而磨損，可以抑制基座對基座支撐構件隨著時間經過的位置偏離。According to the present invention, it is possible to suppress wear due to the relative movement of the fitting convex portion to the inclined portion, and it is possible to suppress the positional deviation of the base to the base support member over time.

本發明的氣相沈積裝置中，上述傾斜部及上述位置決定部的表面粗糙度Ra，理想在2μm(微米)以下。In the vapor deposition apparatus of the present invention, the surface roughness Ra of the inclined portion and the position determining portion is preferably 2 μm (micrometer) or less.

根據本發明，可以抑制由於嵌合凸部對傾斜部及位置決定部的相對移動而磨損，可以抑制基座對基座支撐構件隨著時間經過的位置偏離。According to the present invention, it is possible to suppress wear due to the relative movement of the fitting convex portion to the inclined portion and the position determining portion, and it is possible to suppress the positional deviation of the base to the base supporting member over time.

本發明的磊晶矽晶圓的製造方法，係矽晶圓上形成矽晶膜的磊晶矽晶圓的製造方法，特徵在於利用上述氣相沈積裝置，在上述矽晶圓上形成磊晶膜。The method for manufacturing an epitaxial silicon wafer of the present invention is a method for manufacturing an epitaxial silicon wafer in which a silicon crystal film is formed on a silicon wafer. The method is characterized in that an epitaxial film is formed on the silicon wafer by the vapor deposition apparatus. .

根據本發明，因為可以抑制基座偏離所希望的位置，可以抑制基座上矽晶圓的裝載位置偏離，謀求磊晶膜的厚度均勻化。According to the present invention, since the susceptor can be prevented from deviating from a desired position, the position of the silicon wafer on the susceptor can be prevented from deviating, and the thickness of the epitaxial film can be made uniform.

以下，說明關於本發明的一實施形態。 [氣相沈積裝置的構成] 如第1圖所示，氣相沈積裝置1，包括腔室2、基座3、加熱部4、基座支撐構件5、3支升降頂桿(lift pin)6、升降頂桿支撐構件7以及驅動手段8。Hereinafter, an embodiment of the present invention will be described. [Configuration of Vapor Deposition Apparatus] As shown in Figure 1, the vapor deposition apparatus 1 includes a chamber 2, a base 3, a heating part 4, a base support member 5, three lift pins 6, a lift pin support member 7, and Driving means 8.

腔室2，包括上圓頂21、下圓頂22、以及固定各圓頂21、22的外緣之間的圓頂固定體23，利用這些畫分磊晶膜形成室20。 上圓頂21及下圓頂22，以石英形成。 在下圓頂22的中央，設置筒部221，往下方延伸，插通後述的升降頂桿支撐構件7的主柱71。 圓頂固定體23，包括：氣體供給口24，用以供給反應氣體至磊晶膜形成室20內；以及氣體排出口25，用以從磊晶膜形成室20排出反應氣體。The chamber 2 includes an upper dome 21, a lower dome 22, and a dome fixing body 23 that fixes the outer edges of the domes 21 and 22, and the epitaxial film forming chamber 20 is divided by these pictures. The upper dome 21 and the lower dome 22 are formed of quartz. In the center of the lower dome 22, a cylindrical portion 221 is provided, extends downward, and penetrates the main column 71 of the lifting jack support member 7 described later. The dome fixing body 23 includes a gas supply port 24 for supplying reaction gas into the epitaxial film forming chamber 20 and a gas discharge port 25 for exhausting the reaction gas from the epitaxial film forming chamber 20.

基座3，如第2圖所示，以碳化矽覆蓋的碳形成圓板狀。 基座3的一主面上，形成收納矽晶圓W的圓形倒角部31。倒角部31的直徑，比矽晶圓W的直徑大。 基座3的另一主面的外緣近旁，設置嵌入後述支撐桿53的3個嵌合溝32。嵌合溝32，在基座3的圓周方向上以120°間隔設置。又，關於嵌合溝32的更詳細構成後述。 又，基座3中，設置貫通兩主面的3個貫通孔33。 各貫通孔33，在倒角部31內，在基座3的圓周方向上以120°間隔設置。各貫通孔33，如第1圖的部分放大圖所示，包括：圓錐狀的錐形部33A，隨著從裝載矽晶圓W的倒角部31的裝載面31A朝基座3的厚度方向中心內徑變小；以及軸孔部33B，在基座3的厚度方向中內徑相等。The susceptor 3, as shown in Fig. 2, is formed into a disc shape with carbon covered with silicon carbide. On one main surface of the susceptor 3, a round chamfer 31 for storing the silicon wafer W is formed. The diameter of the chamfered portion 31 is larger than the diameter of the silicon wafer W. Near the outer edge of the other main surface of the base 3, three fitting grooves 32 into which a support rod 53 described later is fitted are provided. The fitting grooves 32 are provided at intervals of 120° in the circumferential direction of the base 3. In addition, a more detailed structure of the fitting groove 32 will be described later. In addition, the base 3 is provided with three through holes 33 penetrating both main surfaces. The through holes 33 are provided in the chamfered portion 31 at intervals of 120° in the circumferential direction of the base 3. Each through hole 33, as shown in the partially enlarged view of FIG. 1, includes a conical tapered portion 33A, which moves from the mounting surface 31A of the chamfered portion 31 on which the silicon wafer W is mounted toward the thickness direction of the susceptor 3 The center inner diameter becomes smaller; and the shaft hole portion 33B has the same inner diameter in the thickness direction of the base 3.

加熱部4，包括設置在加腔室2上側的上加熱器41以及設置在下側的下加熱器42。上加熱器41以及下加熱器42，由紅外線燈或鹵素燈構成。The heating unit 4 includes an upper heater 41 provided on the upper side of the heating chamber 2 and a lower heater 42 provided on the lower side. The upper heater 41 and the lower heater 42 are composed of infrared lamps or halogen lamps.

基座支撐構件5，以石英形成。基座支撐構件5，如第2圖所示，包括圓柱狀的主柱51、從上述主柱51的前端放射狀延伸的3支臂52以及設置在各臂52前端作為嵌合凸部的支撐桿53。 臂52，在主柱51的圓周方向上以120°間隔往斜上方延伸設置。比臂52的中央更往支撐桿53側，設置貫通上述臂52的通貫孔52A。 各支撐桿53以純粹的SiC形成，分別嵌入基座3的各嵌合溝32內，藉此支撐上述基座3。又，關於支撐桿53的更詳細構成後述。The base support member 5 is formed of quartz. The base support member 5, as shown in FIG. 2, includes a cylindrical main column 51, three arms 52 extending radially from the front end of the main column 51, and a support provided at the front end of each arm 52 as a fitting convex portion Rod 53. The arms 52 extend obliquely upward at 120° intervals in the circumferential direction of the main column 51. A through hole 52A penetrating the arm 52 is provided further toward the support rod 53 than the center of the arm 52. Each support rod 53 is formed of pure SiC, and is respectively fitted into each fitting groove 32 of the base 3, thereby supporting the base 3 described above. In addition, a more detailed structure of the support rod 53 will be described later.

升降頂桿6，例如以碳化矽覆蓋的碳形成棒狀。升降頂桿6，如第1圖的部分放大圖所示，包括截頭圓錐狀的頭部61以及從上述頭部61中的直徑較小的端部圓柱狀延伸的軸部62。 升降頂桿6的軸部62插通貫通孔33的軸孔部33B，透過以其自重頭部61與錐形部33A鄰接，利用基座3支撐。The lifting jack 6 is formed into a rod shape, for example, with carbon covered with silicon carbide. As shown in the partially enlarged view of FIG. 1, the lifting jack 6 includes a truncated cone-shaped head 61 and a shaft 62 extending cylindrically from the smaller diameter end of the head 61. The shaft portion 62 of the elevating jack 6 is inserted through the shaft hole portion 33B of the through hole 33, and is supported by the base 3 by being adjacent to the tapered portion 33A by its own weight head 61.

升降頂桿支撐構件7，以石英形成。升降頂桿支撐構件7，包括圓筒狀的主柱71、從上述主柱71的前端放射狀延伸的3支臂72以及設置在各臂72前端的鄰接部73。 各臂72，在主柱71的圓周方向上以120°間隔往斜上方延伸設置。 鄰接部73，從下方支撐升降頂桿6。The lifting jack support member 7 is formed of quartz. The lifting jack support member 7 includes a cylindrical main column 71, three arms 72 extending radially from the front end of the main column 71, and an adjacent portion 73 provided at the front end of each arm 72. Each arm 72 extends obliquely upward at 120° intervals in the circumferential direction of the main column 71. The abutment portion 73 supports the lifting jack 6 from below.

主柱71，插通下圓頂22的筒部221。主柱71的內部，在各臂72位於基座支撐構件5的各臂52下方的狀態，且以基座3支撐的各升降頂桿6下端可與各鄰接部73鄰接的狀態下，插通主柱51。The main column 71 is inserted through the cylindrical portion 221 of the lower dome 22. The inside of the main column 71 is inserted in a state where each arm 72 is located below each arm 52 of the base support member 5, and the lower end of each lifting jack 6 supported by the base 3 can be adjacent to each adjacent portion 73. Main column 51.

驅動手段8，又是旋轉基座支撐構件5及升降頂桿支撐構件7，又是升降升降頂桿支撐構件7。The driving means 8 is the rotating base support member 5 and the lifting jack support member 7 again, and the lifting jack support member 7 is again.

[嵌合溝及支撐桿的詳細構成] 嵌合溝32，如第3(A)圖所示，下面所視形成往基座3的徑方向延伸的長方形。3個嵌合溝32中，1個嵌合溝32，位於通過基座3的中心且在與矽晶圓W的搬入方向D平行的假想線上，而且，比基座3的中心更往搬入方向D側。又，嵌合溝32，如第3(B)圖所示，包括與上述嵌合溝32延伸的方向直交的縱剖面所視半圓狀的圓弧面部321以及從圓弧面部321的兩端分別往下方延伸的平面部322。此圓弧面部321及平面部322，沿著基座3的徑方向以相同形狀連續形成。圓弧面部321及平面部322的表面粗糙度Ra，在2μm以下。 構成圓弧面部321的部分中，存在高度方向的最高位置的部分，構成位置決定部321A。構成圓弧面部321的部分中，位置決定部321A以外的部分，構成傾斜部321B。傾斜部321B，在基座3中對矽晶圓W的裝載面31A斜傾。[Detailed structure of fitting groove and support rod] As shown in FIG. 3(A), the fitting groove 32 is formed in a rectangular shape extending in the radial direction of the base 3 when viewed from below. Among the three fitting grooves 32, one fitting groove 32 is located on an imaginary line passing through the center of the susceptor 3 and parallel to the loading direction D of the silicon wafer W, and is further in the loading direction than the center of the susceptor 3 D side. In addition, the fitting groove 32, as shown in FIG. 3(B), includes a semicircular arc surface portion 321 as viewed in a longitudinal section perpendicular to the direction in which the insertion groove 32 extends, and both ends of the arc surface portion 321 A flat portion 322 extending downward. The circular arc surface portion 321 and the flat surface portion 322 are continuously formed in the same shape along the radial direction of the base 3. The surface roughness Ra of the arc surface portion 321 and the flat surface portion 322 is 2 μm or less. Among the parts constituting the circular arc surface portion 321, there is a part having the highest position in the height direction, and constitutes a position determination unit 321A. Among the parts constituting the arc-shaped surface portion 321, parts other than the position determining portion 321A constitute the inclined portion 321B. The inclined portion 321B is inclined to the mounting surface 31A of the silicon wafer W in the susceptor 3.

支撐桿53，包括從臂52往上方圓柱狀延伸的基部531以及設置在基部531前端的半球狀滑動接觸頭部532。 由於嵌合溝32、支撐桿53的構件精度波動，為了防止支撐桿53不能嵌入嵌合溝32的不良，基部531及滑動接觸頭部532的直徑，比嵌合溝32的圓弧面部321的直徑及一對平面部322間的距離小。The support rod 53 includes a base 531 extending cylindrically upward from the arm 52 and a hemispherical sliding contact head 532 provided at the front end of the base 531. Due to the fluctuation of the precision of the fitting groove 32 and the supporting rod 53, in order to prevent the supporting rod 53 from being unable to fit into the fitting groove 32, the diameter of the base portion 531 and the sliding contact head 532 is larger than that of the arc face portion 321 of the fitting groove 32. The diameter and the distance between the pair of flat portions 322 are small.

[磊晶矽晶圓的製造方法] 其次，說明關於使用氣相沈積裝置1的磊晶矽晶圓的製造方法。 首先，準備矽晶圓W。矽晶圓W的直徑，可以是200mm(毫米)、300mm、450mm等任何大小。 氣相沈積裝置1的磊晶膜形成室20未以加熱部4加熱的常溫時，如第4(A)圖所示，支撐桿53，位於嵌合溝32中基座3的徑方向外側。又，基座3以支撐桿53裝載時，最初滑動接觸頭部532有可能接觸嵌合溝32的傾斜部321B，但由於基座3的自重，滑動接觸頭部532與嵌合溝32的接觸部分往位置決定部321A的方向移動。於是，滑動接觸頭部532的頂部接觸位置決定部321A時，決定各支撐桿53的位置在嵌合溝32內基座3在圓周方向的特定位置上。由於決定此各支撐桿53的位置，基座3重疊其中心與基座支撐構件5的旋轉軸，以基座支撐構件5支撐，使上述基座3上裝載的矽晶圓W主面與水平面平行。[Method of manufacturing epitaxial silicon wafer] Next, a method of manufacturing an epitaxial silicon wafer using the vapor deposition apparatus 1 will be described. First, a silicon wafer W is prepared. The diameter of the silicon wafer W can be any size such as 200mm (millimeters), 300mm, 450mm, etc. When the epitaxial film forming chamber 20 of the vapor deposition apparatus 1 is not heated at the normal temperature by the heating unit 4, as shown in FIG. 4(A), the support rod 53 is located outside the susceptor 3 in the fitting groove 32 in the radial direction. Furthermore, when the base 3 is loaded with the support rod 53, the sliding contact head 532 may initially contact the inclined portion 321B of the fitting groove 32. However, due to the weight of the base 3, the sliding contact head 532 and the fitting groove 32 contact The part moves in the direction of the position determination part 321A. Therefore, when the top contact position determining portion 321A of the head 532 is slidably contacted, the position of each support rod 53 is determined at a specific position of the base 3 in the circumferential direction in the fitting groove 32. Since the position of each support rod 53 is determined, the base 3 overlaps its center with the rotation axis of the base support member 5, and is supported by the base support member 5, so that the main surface of the silicon wafer W loaded on the base 3 and the horizontal plane parallel.

其次，氣相沈積裝置1的加熱部4，作為將矽晶圓W搬入磊晶膜形成室20內的事前準備，加熱磊晶膜形成室20至搬送時設定溫度為止。搬送時設定溫度，一般650℃以上800℃以下。此加熱中，因為基座3的構成材料的熱膨脹係數比基座支撐構件5的構成材料大，如第4(B)圖所示，比起基座支撐構件5基座3膨脹較大，嵌合溝32內支撐桿53往基座3的徑方向內側相對移動。但是，由於基座3的自重的上述作用，因為決定各支撐桿53的位置在嵌合溝32內基座3的周方向的特定位置上，基座3的中心與基座支撐構件5的旋轉軸維持重疊狀態。Next, the heating unit 4 of the vapor deposition apparatus 1 serves as a preliminary preparation for loading the silicon wafer W into the epitaxial film forming chamber 20, and heats the epitaxial film forming chamber 20 to the set temperature during transport. The set temperature during transportation is generally 650°C above 800°C. In this heating, because the thermal expansion coefficient of the constituent material of the base 3 is greater than that of the constituent material of the base support member 5, as shown in Figure 4(B), the base 3 expands more than the base support member 5, and the The support rod 53 in the joint groove 32 relatively moves toward the inner side of the base 3 in the radial direction. However, due to the above-mentioned effect of the weight of the base 3, the position of each support rod 53 is determined at a specific position in the circumferential direction of the base 3 in the fitting groove 32, and the center of the base 3 and the rotation of the base support member 5 The axes remain overlapped.

之後，未圖示的搬送手段支撐構件，經由腔室2中未圖示的晶圓搬出入口，將矽晶圓W搬入磊晶膜形成室20內，停止在基座3的倒角部31上。於是，驅動手段8上升升降頂桿支撐構件7，上升由基座3支撐的升降頂桿6，藉此從支撐構件舉起矽晶圓W。搬送手段移動支撐構件至腔室2的外部後，驅動手段8降下升降頂桿支撐構件7，藉此裝載矽晶圓W至基座3的倒角部31內。After that, the not-shown transport means supporting member transports the silicon wafer W into the epitaxial film forming chamber 20 through the not-shown wafer transfer entrance in the chamber 2 and stops on the chamfered portion 31 of the base 3 . Then, the driving means 8 raises the lifting jack support member 7 and raises the lifting jack 6 supported by the base 3, thereby lifting the silicon wafer W from the support member. After the conveying means moves the support member to the outside of the chamber 2, the driving means 8 lowers the lifting jack support member 7 to thereby load the silicon wafer W into the chamfered portion 31 of the base 3.

其次，加熱部4，作為磊晶膜形成處理的事前準備，再加熱磊晶膜形成室20至成膜時設定溫度為止。成膜時設定溫度，一般1050℃以上1150℃以下。此加熱時，也如第4(C)圖所示，比起基座支撐構件5基座3膨脹較大，嵌合溝32內支撐桿53更往基座3的徑方向內側相對移動。此時也由於基座3的自重的上述作用，基座3的中心與基座支撐構件5的旋轉軸維持重疊狀態。Next, as a pre-preparation for the epitaxial film formation process, the heating unit 4 heats the epitaxial film formation chamber 20 to the set temperature during film formation. Set the temperature during film formation, generally 1050°C or more and 1150°C or less. During this heating, as shown in FIG. 4(C), the base 3 expands more than the base support member 5, and the support rod 53 in the fitting groove 32 relatively moves toward the inner side of the base 3 in the radial direction. At this time, the center of the base 3 and the rotation axis of the base support member 5 maintain an overlapping state due to the above-mentioned action of the own weight of the base 3.

於是，從氣體供給口24連續導入作為載體氣體的氫氣的同時，藉由從氣體排出口25排出，磊晶膜形成室20內形成氫空氣。之後，上升晶膜形成室20內的溫度，與載體氣體一起，導入原料氣體、摻雜氣體至磊晶膜形成室20內的同時，透過驅動手段8旋轉基座支撐構件5與升降頂桿支撐構件7，矽晶圓W上形成磊晶膜。Then, hydrogen gas as a carrier gas is continuously introduced from the gas supply port 24 and simultaneously discharged from the gas discharge port 25 to form hydrogen air in the epitaxial film forming chamber 20. After that, the temperature in the crystal film forming chamber 20 is raised, and the source gas and dopant gas are introduced into the epitaxial film forming chamber 20 together with the carrier gas. At the same time, the driving means 8 rotates the susceptor support member 5 and the lifting jack support Component 7, an epitaxial film is formed on the silicon wafer W.

磊晶膜形成後，加熱部4將磊晶膜形成室20從成膜時設定溫度降低至搬送時設定溫度時，驅動手段8上升升降頂桿支撐構件7，以升降頂桿6從基座3舉起矽晶圓W。之後，閘閥打開時，搬送手段移動支撐構件至磊晶膜形成室20內部，停止在矽晶圓W的下方。於是，驅動手段8降下升降頂桿支撐構件7交接矽晶圓W給支撐構件時，搬送手段將支撐構件與矽晶圓W一起搬出磊晶膜形成室20外部，1枚磊晶矽晶圓的製造處理結束。 之後，搬送手段將新矽晶圓W搬入磊晶膜形成室20內時，進行上述處理，製造磊晶矽晶圓。After the epitaxial film is formed, when the heating section 4 lowers the epitaxial film forming chamber 20 from the set temperature during film formation to the set temperature during transport, the driving means 8 lifts the lifter support member 7 to lift the lifter 6 from the base 3 Lift up the silicon wafer W. After that, when the gate valve is opened, the conveying means moves the supporting member to the inside of the epitaxial film forming chamber 20 and stops under the silicon wafer W. Then, when the driving means 8 lowers the lifting jack support member 7 to transfer the silicon wafer W to the support member, the transport means moves the support member and the silicon wafer W out of the epitaxial film forming chamber 20 together, and one epitaxial silicon wafer The manufacturing process ends. After that, when the new silicon wafer W is transported into the epitaxial film forming chamber 20 by the transport means, the above-mentioned processing is performed to manufacture the epitaxial silicon wafer.

如上述，連續製造複數磊晶矽晶圓的情況下，在搬送時設定溫度與成膜時設定溫度之間重複磊晶膜形成室20的升溫降溫，尤其伴隨從成膜時設定溫度到搬送時設定溫度的降溫時或從搬送時設定溫度到常溫的降溫時的基座3收縮，基座3對支撐桿53變得容易偏離。但是，因為位置決定部321A及傾斜部321B往基座3的徑方向以相同形狀連續形成，基座3膨脹時及收縮時，都根據上述作用，決定支撐桿53在嵌合溝32內基座3的圓周方向的特定位置上的位置。結果，基座3的中心與基座支撐構件5的旋轉軸總是維持重疊的狀態。因此，裝載矽晶圓W在基座3上的相同位置中的狀態下進行氣相沈積處理，謀求磊晶膜的厚度均勻化。 又，因為滑動接觸頭部532形成半球狀，可以抑制因滑動接觸頭部532對圓弧面部321的相對移動而磨損，可以抑制基座3對基座支撐構件5隨著時間經過的位置偏離。As described above, in the case of continuous production of multiple epitaxial silicon wafers, the temperature rise and fall of the epitaxial film forming chamber 20 is repeated between the set temperature during transportation and the set temperature during film formation, especially as the temperature changes from the set temperature during film formation to during transportation The base 3 shrinks when the set temperature is lowered or when the temperature is lowered from the set temperature at the time of transportation to the normal temperature, and the base 3 easily deviates from the support rod 53. However, because the position determining portion 321A and the inclined portion 321B are continuously formed in the same shape in the radial direction of the base 3, when the base 3 expands and contracts, the support rod 53 is determined to be in the fitting groove 32 based on the above action. 3 The position on a specific position in the circumferential direction. As a result, the center of the base 3 and the rotation axis of the base support member 5 always maintain an overlapping state. Therefore, the vapor deposition process is performed in a state where the silicon wafer W is mounted in the same position on the susceptor 3, and the thickness of the epitaxial film is made uniform. In addition, since the sliding contact head 532 is formed in a hemispherical shape, it is possible to suppress abrasion due to the relative movement of the sliding contact head 532 to the arc surface portion 321, and it is possible to suppress the positional deviation of the base 3 to the base support member 5 over time.

[變形例] 又，本發明並非只限定於上述實施形態，在不脫離本發明主旨的範圍內可以作各種改良及設計變更等。[Modifications] In addition, the present invention is not limited to the above-mentioned embodiments, and various improvements and design changes can be made without departing from the scope of the present invention.

例如，如第5(A)圖所示，代替支撐桿53，應用具有基部531以及設置在基部531前端的圓錐狀滑動接頭部542的支撐桿54也可以。 如第5(B)圖所示，代替嵌合溝32，也可以應用嵌合溝34，其具有，縱剖面所視從基座3下面往斜上方且互相接近的方向延伸的同時，往基座3的徑方向以相同形狀連續形成的一對傾斜部341B。 如第5(C)圖所示，代替嵌合溝32，應用嵌合溝34的同時，代替支撐桿53，也可以應用作為只以基部531構成的嵌合凸部的支撐桿55。 第5(A)〜(C)圖所示的構成中，限制對支撐桿54、53、55的基座3下降的狀態中，與嵌合溝32、34、34中的支撐桿54、53、55接觸部分構成位置決定部321A、341A、341A。 支撐桿53、54、55的基部531，也可以是多角柱狀，滑動接頭部542也可以是多角錘狀。 基座3中，設置與滑動接觸頭部532、與滑動接觸頭部542相同或相似的嵌合凸部，基座支撐構件5中設置嵌合溝32、34、34也可以。 設置嵌合溝32、34、34及支撐桿53、54、55各4個以上也可以。 [實施例]For example, as shown in FIG. 5(A), instead of the support rod 53, a support rod 54 having a base portion 531 and a conical sliding joint portion 542 provided at the front end of the base portion 531 may be used. As shown in Fig. 5(B), instead of the fitting groove 32, a fitting groove 34 may also be used, which has a longitudinal cross-sectional view extending from the bottom of the base 3 obliquely upward and approaching each other, and at the same time, toward the base A pair of inclined portions 341B formed continuously in the same shape in the radial direction of the seat 3. As shown in FIG. 5(C), instead of the fitting groove 32, the fitting groove 34 is applied, and instead of the supporting rod 53, the supporting rod 55 as a fitting convex portion composed of only the base 531 may be applied. In the configuration shown in Figures 5 (A) to (C), in a state where the base 3 on the support rods 54, 53, 55 is restricted from descending, it is in contact with the support rods 54, 53 in the fitting grooves 32, 34, and 34. , 55 contact parts constitute position determining parts 321A, 341A, 341A. The base portion 531 of the support rods 53, 54, 55 may also be a polygonal column shape, and the sliding joint portion 542 may also be a polygonal hammer shape. In the base 3, fitting protrusions that are the same as or similar to the sliding contact head 532 and the sliding contact head 542 are provided, and fitting grooves 32, 34, 34 may be provided in the base support member 5. Four or more fitting grooves 32, 34, 34 and support rods 53, 54, 55 may be provided. [Example]

其次，根據實施例更詳細說明本發明，但本發明完全不受這些例的限定。Next, the present invention will be explained in more detail based on examples, but the present invention is not limited by these examples at all.

[實施例] 準備具有與上述實施形態相同的構成且直徑300mm的矽晶圓W用氣相沈積裝置。 形成基座3的嵌合溝32，與基座3徑方向直交的縱剖面所視的開口寬度為5.5mm。又，使基座3徑方向的長度為10mm，形成嵌合溝32。 形成支撐桿53，使基部531及滑動接觸頭部532的直徑為5mm。 根據以上的構成，如第3(B)圖所示，對嵌合溝32決定支撐桿53的位置時，嵌合溝32的開口緣與支撐桿53的基部531間的空隙CA 成為各0.25mm。[Example] A vapor deposition apparatus for silicon wafer W having the same configuration as the above-mentioned embodiment and having a diameter of 300 mm was prepared. The fitting groove 32 forming the base 3 has an opening width of 5.5 mm as viewed in a longitudinal section perpendicular to the radial direction of the base 3. In addition, the length of the base 3 in the radial direction was 10 mm, and the fitting groove 32 was formed. The supporting rod 53 is formed so that the diameter of the base 531 and the sliding contact head 532 is 5 mm. According to the above configuration, as shown in FIG. 3 (B) in FIG, 53, the position of the support bar engaging grooves 32 determines, C A gap between the opening edge of the engaging grooves 32 of the base portion and the support rod 531 becomes the respective 0.25 mm.

於是，連續製造25枚磊晶矽晶圓。 具體而言，首先，決定支撐桿53的滑動接觸頭部532位置，在嵌合溝32內基座3的圓周方向的特定位置上的狀態中，將磊晶膜形成室20從常溫升溫到搬送時設定溫度的700℃。其次，將矽晶圓W搬入磊晶膜形成室20內後，升溫至成膜時設定溫度的1100℃進行氣相沈積處理，降溫至搬送時設定溫度。之後，從磊晶膜形成室20搬出磊晶矽晶圓後，將矽晶圓W搬入磊晶膜形成室20內，進行氣相沈積處理。重複相同的處理，從磊晶膜形成室20搬出第25枚磊晶矽晶圓後，將磊晶膜形成室20降溫至常溫。 之後，不改變基座3的位置，每連續製造25枚磊晶矽晶圓，暫且降溫磊晶膜形成室20至常溫，合計製造100枚磊晶矽晶圓。Thus, 25 epitaxial silicon wafers were continuously manufactured. Specifically, first, the position of the sliding contact head 532 of the support rod 53 is determined, and the temperature of the epitaxial film forming chamber 20 is raised from room temperature to conveyance in the state at a specific position in the circumferential direction of the base 3 in the fitting groove 32 Set the temperature at 700℃. Next, after the silicon wafer W is carried into the epitaxial film forming chamber 20, the temperature is raised to 1100° C., which is the set temperature during film formation, for vapor deposition processing, and the temperature is lowered to the set temperature during transport. After that, after the epitaxial silicon wafer is unloaded from the epitaxial film forming chamber 20, the silicon wafer W is transferred into the epitaxial film forming chamber 20 to perform vapor deposition processing. The same process is repeated, and after the 25th epitaxial silicon wafer is removed from the epitaxial film forming chamber 20, the epitaxial film forming chamber 20 is cooled to normal temperature. After that, without changing the position of the susceptor 3, every 25 pieces of epitaxial silicon wafers are continuously produced, and the temperature of the epitaxial film forming chamber is temporarily reduced by 20 to normal temperature, and a total of 100 epitaxial silicon wafers are produced.

[比較例] 分別代替嵌合溝32及支撐桿53，除了應用第6圖所示的嵌合溝39及支撐桿59以外，以與實施例相同的條件製造100枚磊晶矽晶圓。 嵌合溝39，下面所視，形成與嵌合溝32相同形狀且相同大小的長方形。嵌合溝39，包括：一對側面部391，與基座3的徑方向直交的縱剖面所視，往對基座3下面直交的方向延伸；以及底面部392，連接一對側面部391的上端之間，與基座3下面平行。 支撐桿59，具有圓柱狀的基部591，其上面591A形成與基部591的軸直交的平面狀。[Comparative example] In place of the fitting groove 32 and the support rod 53, respectively, except that the fitting groove 39 and the support rod 59 shown in FIG. 6 were used, 100 epitaxial silicon wafers were manufactured under the same conditions as the embodiment. The fitting groove 39 is formed into a rectangle having the same shape and the same size as the fitting groove 32 when viewed from below. The fitting groove 39 includes a pair of side portions 391, which extend in a direction perpendicular to the bottom surface of the base 3 when viewed in a longitudinal section perpendicular to the radial direction of the base 3; and a bottom portion 392 connecting the pair of side portions 391 Between the upper ends, parallel to the bottom of the base 3. The support rod 59 has a cylindrical base 591, and its upper surface 591A is formed in a plane perpendicular to the axis of the base 591.

形成嵌合溝39、支撐桿59，使嵌合溝39與基座3的徑方向直交的縱剖面所視的開口寬度和支撐桿59的基部591的直徑分別成為與嵌合溝32、支撐桿53相同的大小。 根據以上的構成，第6圖所示的縱剖面所視，決定支撐桿59的位置在嵌合溝39中央時，嵌合溝39的開口緣與基部591的空隙CB 各成為與空隙CA 相同的0.25mm。The fitting groove 39 and the support rod 59 are formed so that the width of the opening viewed from the longitudinal section perpendicular to the radial direction of the base 3 and the diameter of the base portion 591 of the support rod 59 are the same as those of the fitting groove 32 and the support rod. 53 same size. According to the above configuration, shown in longitudinal section as viewed in FIG. 6, determine the position of the support bar 59 at the center of the engaging grooves 39, engaging grooves 39 and the opening edge of the base portion 591 of each gap becomes the gap C B C A The same 0.25mm.

[評價] 實施例、比較例中，對於矽晶圓W的基座3上的目標裝載位置的裝載位置偏離，利用測量裝置(Epricrew公司製 Edge Zoom)從基座3上方測量。在此，因為矽晶圓W搬入時基座3上的停止位置在全處理中相同位置，矽晶圓W的裝載位置離偏離目標裝載位置的話，表示基座3對基座支撐構件5偏離。[Evaluation] In the Examples and Comparative Examples, the loading position deviation of the target loading position on the susceptor 3 of the silicon wafer W was measured from above the susceptor 3 using a measuring device (Edge Zoom manufactured by Epricrew). Here, since the stop position on the susceptor 3 when the silicon wafer W is loaded is the same position in the entire process, if the loading position of the silicon wafer W deviates from the target loading position, it means that the susceptor 3 deviates from the susceptor support member 5.

第7(A)圖顯示比較例中的最初25枚處理時矽晶圓W的裝載位置分布，第7(B)圖顯示實施例中的相同分布。 又，第8(A)圖顯示比較例中的每25枚處理的平均偏離位置(偏離量、偏離方向)的遷移，第8(B)圖顯示實施例中的相同遷移。 又，第7(A)、(B)、8(A)、(B)圖中，縱軸Y及橫軸X的值係以第1、3、4(A)〜(C)的XYZ軸作為基準的值。即，縱軸Y的正值，表示矽晶圓W往搬出方向的偏離，負值表示矽晶圓W往搬入方向D(參照第3(A)圖)的偏離。又，橫軸X的正值，顯示往與搬入方向直交的一方向的偏離，負值顯示往與搬入方向直交的另一方向的偏離。 又，橫軸及縱軸的位置都是0mm的話，表示裝載位置未偏離目標裝載位置。Fig. 7(A) shows the distribution of the loading positions of the silicon wafers W during the first 25 processing in the comparative example, and Fig. 7(B) shows the same distribution in the embodiment. In addition, Figure 8(A) shows the transition of the average deviation position (deviation amount, deviation direction) per 25 processing in the comparative example, and Figure 8(B) shows the same transition in the example. In addition, in Figures 7(A), (B), 8(A), and (B), the values of the vertical axis Y and the horizontal axis X are based on the XYZ axis of the first 1, 3, and 4(A)~(C) The value used as a benchmark. That is, the positive value of the vertical axis Y indicates the deviation of the silicon wafer W in the carrying-in direction, and the negative value indicates the deviation of the silicon wafer W in the carrying-in direction D (refer to FIG. 3(A)). In addition, the positive value of the horizontal axis X shows the deviation from one direction perpendicular to the carrying-in direction, and the negative value shows the deviation from the other direction perpendicular to the carrying-in direction. In addition, if the positions of the horizontal axis and the vertical axis are both 0 mm, it means that the loading position has not deviated from the target loading position.

第7(A)圖所示的比較例的裝載位置波動，比第7(B)圖所示的實施例的波動小。即使比較波動的標準偏差，對於比較例是0.084mm，實施例也是0.063mm。 又，如第8(A)圖所示，比較例中，每增加處理枚數，裝載位置從目標裝載位置的偏離就變大，100枚的處理結束時刻的偏離量是0.75mm。相對於此，如第8(B)圖所示，實施例中，裝載位置從目標裝載位置的偏離比比較例小，100枚的處理結束時刻的偏離量是0.25mm。 根據以上的結果，可以確認以下事實。The fluctuation of the loading position of the comparative example shown in Fig. 7(A) is smaller than that of the embodiment shown in Fig. 7(B). Even if the standard deviation of the fluctuation is compared, it is 0.084 mm for the comparative example and 0.063 mm for the example. Also, as shown in Fig. 8(A), in the comparative example, every time the number of processed sheets increases, the deviation of the loading position from the target loading position becomes larger, and the deviation amount at the end of the processing of 100 sheets is 0.75 mm. On the other hand, as shown in FIG. 8(B), in the embodiment, the deviation of the loading position from the target loading position is smaller than that of the comparative example, and the deviation amount at the end of the processing of 100 sheets is 0.25 mm. Based on the above results, the following facts can be confirmed.

比較例及實施例，隨著磊晶膜形成室20的升溫降溫時的基座3的膨脹收縮，基座3對支撐桿53、59都變得容易偏離。 比較例中，嵌合溝39的底面部392與支撐桿59的上面591A，因為與基座3的下面，即水平面平行，基座3對支撐桿59偏離的話，維持其偏離狀態，進行其次的處理。結果，明白矽晶圓W裝載位置從目標裝載位置的偏離慢慢變大。In the comparative example and the embodiment, with the expansion and contraction of the susceptor 3 when the temperature of the epitaxial film forming chamber 20 is raised and lowered, the support rods 53 and 59 of the susceptor 3 are easily deviated. In the comparative example, the bottom surface 392 of the fitting groove 39 and the upper surface 591A of the support rod 59 are parallel to the lower surface of the base 3, that is, the horizontal plane. If the base 3 deviates from the support rod 59, the deviated state is maintained. deal with. As a result, it is understood that the deviation of the loading position of the silicon wafer W from the target loading position gradually increases.

另一方面，實施例中，基座3對支撐桿53即使一時偏離，也由於基座3的自重，滑動接觸頭部532與嵌合溝32的接觸部分慢慢相對移動，透過滑動接觸頭部532的頂部接觸位置決定部321A，決定支撐桿53的位置在基座3的圓周方向的特定位置即位置偏離前的位置上。結果，明白即使重複氣相沈積處理，矽晶圓W裝載位置從目標裝載位置的偏離相較於比較例也變小。On the other hand, in the embodiment, even if the base 3 deviates from the support rod 53 for a while, due to the weight of the base 3, the contact part of the sliding contact head 532 and the fitting groove 32 slowly moves relative to each other, and the sliding contact head The top contact position determining portion 321A of the 532 determines that the position of the support rod 53 is a specific position in the circumferential direction of the base 3, that is, a position before the position shift. As a result, it is understood that even if the vapor deposition process is repeated, the deviation of the loading position of the silicon wafer W from the target loading position becomes smaller than that of the comparative example.

1:氣相沈積裝置 2:腔室 20:磊晶膜形成室 21:上圓頂 22:下圓頂 221:筒部 23:圓頂固定體 24:氣體供給口 25:氣體排出口 3:基座 31:倒角部 31A:裝載面 32:嵌合溝 321:圓弧面部 321A:位置決定部 321B:傾斜部 322:平面部 33:貫通孔 33A:錐形部 33B:軸孔部 34:嵌合溝 341A:位置決定部 341B:傾斜部 39:嵌合溝 391:側面部 392:底面部 4:加熱部 41:上加熱器 42:下加熱器 5:基座支撐構件 51:主柱 52:臂 52A:通貫孔 53,54:支撐桿(嵌合凸部) 531:基部 532,542:滑動接觸頭部 55,59:支撐桿 591:基部 591A:上面 6:升降頂桿 61:頭部 62:軸部 7:升降頂桿支撐構件 71:主柱 72:臂 73:鄰接部 8:驅動手段 W:矽晶圓1: Vapor deposition device 2: chamber 20: Epitaxy film formation chamber 21: Upper dome 22: Lower dome 221: Tube 23: Dome fixed body 24: Gas supply port 25: Gas outlet 3: base 31: Chamfer 31A: Loading surface 32: Mating groove 321: arc face 321A: Location Determination Department 321B: Inclined part 322: Plane Department 33: Through hole 33A: Taper 33B: Shaft hole 34: Mosaic groove 341A: Location Determination Department 341B: Inclined part 39: Mosaic groove 391: side 392: Bottom Face 4: heating part 41: Upper heater 42: Lower heater 5: Base support member 51: main column 52: arm 52A: Through hole 53,54: Support rod (fitting convex part) 531: base 532,542: Sliding contact head 55, 59: support rod 591: base 591A: Above 6: Lifting mandrel 61: head 62: Shaft 7: Lifting ejector support member 71: main column 72: arm 73: Adjacent part 8: Driving means W: Silicon wafer

[第1圖] 係本發明的一實施形態的氣相沈積裝置模式圖； [第2圖] 係上述氣相沈積裝置的基座及基座支撐構件的立體圖； [第3圖] (A)係從下方看基座的嵌合溝內嵌入支撐桿的狀態圖，(B)係沿著(A)的IIIB-IIIB線的剖面圖； [第4圖] 係從下方看基座的嵌合溝內嵌入支撐桿的狀態圖，顯示(A)在常溫時，(B)在加熱至搬運時設定溫度時，(C)在加熱至成膜時設定溫度時的狀態； [第5圖] (A)〜(C)係顯示本發明變形例的基座與基座支撐桿的嵌合狀態模式圖； [第6圖] 係顯示本發明實施例中比較例的基座與基座支撐桿的嵌合狀態模式圖； [第7圖] 係顯示上述實施例中處理最初25枚矽晶圓時對基座上的目標裝載位置的裝載位置分布，(A)表示比較例的分布，(B)表示實施例的分布；以及 [第8圖] 係顯示上述實施例中對每次處理25枚矽晶圓的基座上的目標裝載位置的平均裝載位置遷移，(A)表示比較例的遷移，(B)表示實施例的遷移。[Figure 1] is a schematic diagram of a vapor deposition apparatus according to an embodiment of the present invention; [Figure 2] is a perspective view of the susceptor and susceptor supporting member of the above vapor deposition apparatus; [Figure 3] (A) is a view of the state where the support rod is embedded in the fitting groove of the base viewed from below, (B) is a sectional view along the line IIIB-IIIB of (A); [Figure 4] A view of the state of inserting the support rod into the fitting groove of the base from below, showing that (A) is at room temperature, (B) is heated to the set temperature during transportation, and (C) is heated to complete The state of the film when the temperature is set; [Figure 5] (A)~(C) is a schematic diagram showing the fitting state of the base and the base support rod of the modification of the present invention; [Figure 6] is a schematic diagram showing the fitting state of the base and the base support rod of the comparative example in the embodiment of the present invention; [Figure 7] It shows the loading position distribution of the target loading positions on the susceptor when processing the first 25 silicon wafers in the above embodiment, (A) shows the distribution of the comparative example, (B) shows the distribution of the embodiment; as well as [Figure 8] It shows the average loading position migration of the target loading position on the susceptor for processing 25 silicon wafers per time in the above embodiment, (A) shows the migration of the comparative example, and (B) shows the embodiment migrate.

3:基座 3: base

32:嵌合溝 32: Mating groove

321:圓弧面部 321: arc face

321A:位置決定部 321A: Location Determination Department

321B:傾斜部 321B: Inclined part

322:平面部 322: Plane Department

53:支撐桿(嵌合凸部) 53: Support rod (fitting convex part)

531:基部 531: base

532:滑動接觸頭部 532: Sliding contact head

D:搬入方向 D: Move in direction

CA:空隙 C A : gap

Claims (4)

一種氣相沈積裝置，在矽晶圓上形成磊晶膜，其特徵在於： 包括： 圓板狀的基座，裝載上述矽晶圓；以及 基座支撐構件，支撐旋轉上述基座； 其中，在上述基座及上述基座支撐構件中的一方，設置複數嵌合溝，在另一方，設置分別嵌入上述複數嵌合溝的複數嵌合凸部； 上述嵌合溝中，設置：傾斜部，形成對上述基座中的上述矽晶圓的裝載面傾斜，以上述基座的自重維持上述嵌合凸部接觸的狀態，使上述嵌合凸部對上述嵌合溝往上述基座的圓周方向相對移動；以及位置決定部，決定由上述傾斜部相對移動的上述嵌合凸部的位置在上述圓周方向的特定位置上； 上述傾斜部及上述位置決定部，往上述基座的徑方向連續形成。A vapor deposition device for forming an epitaxial film on a silicon wafer, characterized in that: include: A disc-shaped base on which the above-mentioned silicon wafers are mounted; and The base supporting member supports and rotates the aforementioned base; Wherein, on one of the base and the base supporting member, a plurality of fitting grooves are provided, and on the other side, a plurality of fitting protrusions respectively embedded in the plurality of fitting grooves are provided; The fitting groove is provided with an inclined portion formed to be inclined to the mounting surface of the silicon wafer in the susceptor, and the state of contact with the fitting convex portion is maintained by the weight of the susceptor, and the fitting convex portion is aligned with The fitting groove is relatively moved in the circumferential direction of the base; and a position determining portion determines the position of the fitting convex portion relatively moved by the inclined portion at a specific position in the circumferential direction; The inclined portion and the position determining portion are continuously formed in the radial direction of the base. 如申請專利範圍第1項所述的氣相沈積裝置，其特徵在於： 上述嵌合凸部中與上述傾斜部的接觸部分，形成凸曲面狀。The vapor deposition device described in item 1 of the scope of patent application is characterized in that: The contact part of the said fitting convex part with the said inclined part is formed in the convex curve shape. 如申請專利範圍第1或2項所述的氣相沈積裝置，其特徵在於： 上述傾斜部及上述位置決定部的表面粗糙度Ra，在2μm(微米)以下。The vapor deposition device as described in item 1 or 2 of the scope of patent application is characterized in that: The surface roughness Ra of the inclined portion and the position determining portion is 2 μm (micrometer) or less. 一種磊晶矽晶圓的製造方法，在矽晶圓上形成磊晶膜，其特徵在於： 利用如申請專利範圍第1～3項中任一項所述的氣相沈積裝置，在上述矽晶圓上形成磊晶膜。A method for manufacturing an epitaxial silicon wafer, forming an epitaxial film on the silicon wafer, is characterized in that: An epitaxial film is formed on the silicon wafer using the vapor deposition apparatus described in any one of items 1 to 3 in the scope of the patent application.
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