TW202025113A - Display device, display module, and electronic device - Google Patents

Abstract

Provided is a display device having high display quality. Provided is a display device having low power consumption. Provided is a display device wherein a pixel has a first transistor, a second transistor, a first conductive layer, and a light emitting diode package. The light emitting diode package has a first light emitting diode, a second light emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light emitting diode has a first electrode and a second electrode. The second light emitting diode has a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.

Description

Display device, display module and electronic device

One embodiment of the present invention relates to a display device, a display module, and an electronic device.

Note that one embodiment of the present invention is not limited to the above technical field. As an example of the technical field of an embodiment of the present invention, semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting equipment, input devices (for example, touch sensors, etc.) ), input and output devices (for example, touch panels, etc.), their driving methods, or their manufacturing methods.

In recent years, a display device using a micro LED (Light Emitting Diode) as a display element has been proposed (for example, Patent Document 1). Display devices using micro LEDs for display elements have the advantages of high brightness, high contrast, and long service life. Therefore, as a new generation of display devices, research and development are very active. [Patent Literature]

[Patent Document 1] US Patent Application Publication No. 2014/0367705 Specification

One of the objectives of an embodiment of the present invention is to provide a high-definition display device. One of the objectives of an embodiment of the present invention is to provide a display device with high display quality. One of the objectives of an embodiment of the present invention is to provide a display device with low power consumption. One of the objectives of an embodiment of the present invention is to provide a display device with high reliability.

Note that the description of the above objectives does not prevent the existence of other objectives. An embodiment of the present invention does not necessarily need to achieve all the above-mentioned objects. Purposes other than those mentioned above can be extracted from the description, drawings, and description of the scope of patent application.

The display device of one embodiment of the present invention includes a first transistor, a second transistor, a first conductive layer, and a light emitting diode package in a pixel. The light emitting diode package includes a first light emitting diode, a second light emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light emitting diode includes a first electrode and a second electrode. The second light emitting diode includes a third electrode and a fourth electrode. One of the source and drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of the source and drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to the second electrode through the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode through the fourth conductive layer. The first conductive layer is supplied with a fixed potential.

In addition, the display device according to an embodiment of the present invention includes a first transistor, a second transistor, a third transistor, a first conductive layer, and a light emitting diode package in a pixel. The light emitting diode package includes a first light emitting diode, a second light emitting diode, a third light emitting diode, a second conductive layer, a third conductive layer, a fourth conductive layer, and a fifth conductive layer. The first light emitting diode includes a first electrode and a second electrode. The second light emitting diode includes a third electrode and a fourth electrode. The third light emitting diode includes a fifth electrode and a sixth electrode. One of the source and drain of the first transistor is electrically connected to the first electrode through the second conductive layer. One of the source and drain of the second transistor is electrically connected to the third electrode through the third conductive layer. One of the source and drain of the third transistor is electrically connected with the fifth electrode through the fifth conductive layer. The first conductive layer is electrically connected to the second electrode through the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode through the fourth conductive layer. The first conductive layer is electrically connected to the sixth electrode through the fourth conductive layer. The first conductive layer is supplied with a fixed potential.

The first light emitting diode, the second light emitting diode and the third light emitting diode are preferably all small light emitting diodes. In addition, the first light emitting diode, the second light emitting diode and the third light emitting diode are preferably all miniature light emitting diodes.

Each of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode preferably exhibits light of different colors. For example, the first light-emitting diode preferably presents red light, the second light-emitting diode preferably presents green light, and the third light-emitting diode preferably presents blue light.

Preferably, the first transistor, the second transistor and the third transistor all include a metal oxide in the channel formation region.

The fourth conductive layer and the second electrode are preferably electrically connected to each other through the first lead.

The fourth conductive layer and the fourth electrode are preferably electrically connected to each other by a second lead.

The second conductive layer and the first electrode are preferably in contact with each other.

The third conductive layer and the third electrode are preferably electrically connected to each other by a third lead.

One embodiment of the present invention is a module including a display device having any of the above structures, and the module is mounted with a flexible printed circuit (Flexible printed circuit, hereinafter referred to as FPC) or TCP (Tape Carrier Package: Tape and Reel Package). ) And other connectors, or use COG (Chip On Glass) method or COF (Chip On Film: Chip On Film) method, etc., to mount an integrated circuit (IC).

An embodiment of the present invention is an electronic device including at least one of the above-mentioned module, antenna, battery, housing, camera, speaker, microphone, and operation button.

According to an embodiment of the present invention, a high-definition display device can be provided. According to an embodiment of the present invention, a display device with high display quality can be provided. According to an embodiment of the present invention, a display device with low power consumption can be provided. According to an embodiment of the present invention, a display device with high reliability can be provided.

Note that the description of the above effects does not prevent the existence of other effects. An embodiment of the present invention does not necessarily need to have all the above-mentioned effects. Effects other than the above-mentioned effects can be extracted from descriptions, drawings, and descriptions in the scope of patent applications.

The embodiments will be described in detail with reference to the drawings. Note that the present invention is not limited to the following description, and those skilled in the art can easily understand the fact that the method and details can be changed into various forms without departing from the spirit and scope of the present invention. . Therefore, the present invention should not be interpreted as being limited to the content described in the embodiments shown below.

Note that in the structure of the invention described below, the same reference numerals are used in common in different drawings to show the same parts or parts with the same functions, and repeated descriptions are omitted. In addition, the same hatching is sometimes used when displaying parts with the same function, without adding component symbols in particular.

In addition, for ease of understanding, the positions, sizes, and ranges of the various components shown in the drawings may not show their actual positions, sizes, and ranges. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

In addition, the "film" and "layer" can be interchanged depending on the situation or state. For example, the "conductive layer" can be changed to the "conductive film". In addition, the "insulating film" can be converted into an "insulating layer".

Embodiment 1 In this embodiment, a display device according to an embodiment of the present invention will be described with reference to FIGS. 1A to 7.

[Outline of display device] The display device of this embodiment includes a first transistor, a second transistor, a first conductive layer, and a light emitting diode package (also referred to as an LED package) in the pixel.

The LED package has a structure in which one or more light-emitting diodes (or light-emitting diode chips (also referred to as LED chips)) are sealed in a lead frame, a board, or a housing.

The LED package includes a first light emitting diode, a second light emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer.

The first light emitting diode includes a first electrode and a second electrode. The first electrode is used as the pixel electrode of the first light emitting diode. One of the source and drain of the first transistor is electrically connected to the first electrode through the second conductive layer.

The second light emitting diode includes a third electrode and a fourth electrode. The third electrode is used as the pixel electrode of the second light emitting diode. One of the source and drain of the second transistor is electrically connected to the third electrode through the third conductive layer.

The second electrode is used as the common electrode of the first light emitting diode, and the fourth electrode is used as the common electrode of the second light emitting diode. The first conductive layer is electrically connected to the second electrode through the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode through the fourth conductive layer. The first conductive layer is supplied with a fixed potential.

The display device of this embodiment can be manufactured by mounting an LED package on a circuit board formed with a plurality of transistors. Therefore, compared with the method of mounting the light emitting diodes (or LED chips) on the circuit board one by one, the manufacturing time of the display device can be shortened and the manufacturing difficulty can be reduced. As a result, the manufacturing yield of the display device can be improved. In addition, it is possible to achieve high-definition or large-scale display devices.

The display device of this embodiment has a function of displaying an image using a light-emitting diode. Since the light-emitting diode is a self-luminous element, when the light-emitting diode is used as a display element, the display device does not require a backlight, and a polarizing plate may not be provided. As a result, the power consumption of the display device can be reduced, and the thickness and weight of the display device can be reduced. In addition, since a display device using a light-emitting diode as a display element has high contrast and wide viewing angle, high display quality can be obtained. In addition, by using inorganic materials as luminescent materials, the service life of the display device can be prolonged to improve reliability.

Note that in this specification, etc., light-emitting diodes with a chip area of 10,000 μm ² or less are sometimes referred to as micro LEDs, and light-emitting diodes with a chip area greater than 10,000 μm ² and 1 mm ² or less are sometimes referred to as small LEDs. A light emitting diode with a chip area greater than 1mm ² is recorded as a large LED.

For example, a light-emitting diode with a chip size of 100 μm ² or less can also be said to be a micro LED (micro LED chip). For example, a 1mm□ LED package can use micro LED chips or small LED chips.

The display device according to an embodiment of the present invention may use any of micro LEDs, small LEDs, and large LEDs. In particular, the display device of one embodiment of the present invention preferably includes a micro LED or a small LED, and more preferably includes a micro LED.

Area of the wafer in the light-emitting diode is preferably 1mm ² or less, more preferably 10000μm ² or less, more preferably 3000μm ² or less, more preferably 700μm ² or less.

Area of the region emitting light emitting diode is preferably 1 mm ² or less, more preferably 10000μm ² or less, more preferably 3000μm ² or less, more preferably 700μm ² or less.

In this embodiment, an example of a case where a micro LED is used as a light-emitting diode is particularly described. In addition, in this embodiment, a micro LED having a double heterojunction is described. Note that there are no special restrictions on light-emitting diodes. For example, micro-LEDs with quantum well junctions, LEDs using nano-pillars, etc. can be used.

The transistor included in the display device preferably has a metal oxide in the channel formation region. The use of metal oxide transistors can reduce power consumption. Therefore, by combining the transistor and the micro LED, a display device with extremely low power consumption can be realized.

[Structure example 1 of display device] FIG. 1A shows a top view of the display device 100. The display device 100 includes a plurality of pixels 130 in the display section 110. A plurality of pixels 130 are arranged in a matrix in the display unit 110. The display unit 110 is supplied with signals and power from FPC1 and FPC2 through wiring 108.

FIG. 1B shows a top view of the display device 100A. The display device 100A includes a circuit 109 between the display portion 110 and the wiring 108. The display unit 110 and the circuit 109 are supplied with signals and power from the FPC1 or FPC2 through the wiring 108.

The display device according to an embodiment of the present invention may have one or both of a scanning line drive circuit (gate driver) and a signal line drive circuit (source driver) built in. Alternatively, the display device of one embodiment of the present invention may have a structure in which one or both of the gate driver and the source driver are not built in, and the driver is provided externally. For example, an IC used as a gate driver or a source driver can be electrically connected to the display device. The IC can be installed in the display device in a COG or COF method. Alternatively, an IC-mounted FPC, TAB (Tape Automated Bonding) tape, or TCP, etc. can be connected to the display device.

As the circuit 109, for example, one or both of a gate driver and a source driver can be applied.

FIG. 1C shows a top view of the pixel 130 included in the display device 100. One pixel 130 is provided with one LED package 150. That is, the display unit 110 shown in FIG. 1A is provided with a plurality of LED packages 150 in a matrix.

The pixel 130 includes a conductive layer 131R, a conductive layer 131G, a conductive layer 131B, a conductive layer 132 and an LED package 150.

FIG. 1D shows a top view of the LED package 150 included in the pixel 130.

The LED package 150 includes at least one LED die. In this embodiment, an example in which the LED package 150 includes a red LED chip 151R, a green LED chip 151G, and a blue LED chip 151B is shown. That is, in this embodiment, the pixel 130 adopts a structure in which three color sub-pixels of R (red), G (green), and B (blue) represent one color.

In addition, the pixel 130 may adopt a structure in which four color sub-pixels of R, G, B, and W (white) represent one color or a structure in which four color sub-pixels of R, G, B, and Y (yellow) represent one. Color structure, etc. In addition, there are no particular restrictions on the color elements, and colors other than RGBWY (for example, cyan or magenta, etc.) may also be used.

The LED package 150 further includes a heat sink 154, an electrode 152R, an electrode 152G, an electrode 152B, and an electrode 153.

The red LED chip 151R is located on the electrode 152R. The green LED chip 151G and the blue LED chip 151B are located on the heat sink 154.

The red LED chip 151R, the green LED chip 151G, and the blue LED chip 151B are all electrically connected to the electrode 153 by the lead 143.

The red LED chip 151R, the green LED chip 151G, and the blue LED chip 151B preferably include light emitting diodes that exhibit light of different colors. Therefore, the process of forming the color conversion layer is not required. Therefore, the manufacturing cost of the LED chip can be suppressed.

In addition, the red LED chip 151R, the green LED chip 151G, and the blue LED chip 151B include light emitting diodes that exhibit light of the same color. At this time, the light emitted by the light-emitting diode can also be extracted to the outside of the display device through one or both of the color conversion layer and the color layer. One or both of the color conversion layer and the color layer may be disposed inside or above the LED package 150.

In addition, the display device of this embodiment may include a light emitting diode that emits infrared light. A light emitting diode that exhibits infrared light can be used as a light source of an infrared light sensor, for example.

Fig. 2A shows a cross-sectional view along the chain line A-B in Fig. 1C. That is, FIG. 2A is a cross-sectional view including a blue LED chip 151B, a conductive layer 131B and a conductive layer 132 electrically connected to the blue LED chip 151B. Note that in FIG. 2A, a part of components such as wiring is omitted for clarity.

In addition, since the cross-sectional structure including the green LED chip 151G, the conductive layer 131G and the conductive layer 132 electrically connected to the green LED chip 151G is also the same as FIG. 2A, the following description can be referred to.

As shown in FIG. 2A, in the display device 100, the transistor 120 is electrically connected to the LED package 150 through the conductive layer 131B.

The transistor 120 includes a conductive layer 121 used as a back gate, an insulating layer 122 used as a gate insulating layer, and a metal oxide layer 123 used as a semiconductor layer (channel formation region 123i and a pair of low resistance regions 123n ), a pair of conductive layers 126a, 126b each electrically connected to the low-resistance region 123n, an insulating layer 124 used as a gate insulating layer, and a conductive layer 125 used as a gate. The conductive layer 121 and the metal oxide layer 123 overlap with the insulating layer 122 therebetween. The conductive layer 125 and the metal oxide layer 123 overlap with the insulating layer 124 therebetween.

An insulating layer 127 is provided on the transistor 120, and a conductive layer 131B and a conductive layer 132 are provided on the insulating layer 127. The conductive layer 131B is electrically connected to the conductive layer 126b through an opening provided in the insulating layer 127.

It is preferable to use a material that does not easily diffuse impurities such as water or hydrogen for at least one of the insulating layer 124 and the insulating layer 127. Thus, the diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved. The insulating layer 127 is used as a planarization layer.

In FIG. 2A, the transistor 120 is provided on the substrate 102 with the insulating layer 104 interposed. The insulating layer 104 functions as a base film. The insulating layer 104 is used as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 102 to the transistor 120 and oxygen from the metal oxide layer 123 to the insulating layer 104 side. As the insulating layer 104, for example, an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like, which is less likely to diffuse hydrogen or oxygen than a silicon oxide film, can be used. In addition, the insulating layer 104 may not be provided and the transistor 120 may be directly formed on the substrate 102.

The end of the conductive layer 131B and the end of the conductive layer 132 are covered by the protective layer 128. The protective layer 128 includes an opening reaching the top surface of the conductive layer 131B and an opening reaching the top surface of the conductive layer 132. In the opening, the conductive layer 131B and the conductive layer 132 are each electrically connected to the LED package 150 through the conductor 133.

As the material of the protective layer 128, resins such as acrylic resin, polyimide, epoxy, and silicone are preferably used. By providing the protective layer 128, the short circuit caused by the contact between the conductor 133 on the conductive layer 131B and the conductor 133 on the conductive layer 132 can be suppressed. In addition, the protective layer 128 may not be provided.

For example, as the conductor 133, conductive paste of silver, carbon, copper, etc., bumps of gold, solder, or the like can be suitably used. In addition, the conductive layers 131R, 131G, 131B, and 132 and the electrodes 152R, 152G, 152B, and 153 connected to the conductor 133 are preferably made of a conductive material with low contact resistance with the conductor 133. For example, when silver paste is used for the conductor 133, if the conductive material connected to them is an alloy of aluminum, titanium, copper, silver (Ag), palladium (Pd) and copper (Cu) (Ag-Pd-Cu (APC)) Etc., the contact resistance is low, so it is preferable.

The conductor 133 may be provided on the substrate 102 or on the side of the LED package 150. For example, a conductor 133 is provided on each of the conductive layers 131R, 131G, 131B, and 132, and then the conductor 133 is connected to the LED package 150, so that the LED package 150 can be mounted on the substrate 102.

One transistor can also be electrically connected to multiple light-emitting diodes.

The side surface of the LED package 150 is covered with resin 129. When a black resin is used as the resin 129, the display contrast can be improved, so it is preferable. In addition, a surface protection layer, an impact absorption layer, etc. may also be provided on the top surface of the LED package 150. Since the LED package 150 has a structure for extracting light to the upper side, the layer provided on the top surface of the LED package 150 is preferably transparent to visible light.

As the substrate 102, you can use: insulating substrates such as glass substrates, quartz substrates, sapphire substrates, ceramic substrates, etc.; or semiconductor substrates such as single crystal semiconductor substrates or polycrystalline semiconductor substrates made of silicon or silicon carbide, silicon germanium, etc. Compound semiconductor substrates, SOI substrates, etc.

The substrate 102 preferably blocks visible light (has impermeability to visible light). When the substrate 102 blocks visible light, light entering the transistor 120 formed on the substrate 102 from the outside can be suppressed. However, one embodiment of the present invention is not limited to this, and the substrate 102 may be transparent to visible light.

In addition, the substrate 102 may also include one or two of a reflective layer that reflects the light of the light-emitting diode and a light-shielding layer that blocks the light.

The multiple light-emitting diodes (LED chips) included in the LED package 150 can be driven by transistors with the same structure or by transistors with different structures. For example, at least one of the size, channel length, channel width, and structure of the transistor for driving the red LED chip 151R, the transistor for driving the green LED chip 151G, and the transistor for driving the blue LED chip 151B may be different from each other. . Specifically, one or both of the channel length and channel width of the transistor may be changed according to the amount of current and color used to emit light with desired brightness.

In addition, as materials that can be used to form various conductive layers of the display device of the present embodiment, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or metals such as those mainly Composition of alloys, etc. A film containing these materials can be used in a single-layer or laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, and a copper-magnesium-aluminum alloy film laminated on copper The two-layer structure of the film, the two-layer structure of laminating a copper film on a titanium film, a two-layer structure of laminating a copper film on a tungsten film, sequentially stacking a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or nitrogen A three-layer structure of a titanium oxide film, and a three-layer structure in which a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitride film are sequentially stacked. In addition, oxides such as indium oxide, tin oxide, or zinc oxide can be used. In addition, by using copper containing manganese, the controllability of the shape during etching can be improved, which is preferable.

Examples of insulating materials that can be used to form various insulating layers of the display device of this embodiment include resins such as acrylic resin, polyimide, epoxy, and silicone, such as silicon oxide, silicon oxynitride, and oxynitride. Inorganic insulating materials such as silicon, silicon nitride or alumina.

The LED package 150 will be described in detail with reference to FIG. 2B. In addition, the blue LED chip 151B will be described in more detail with reference to FIG. 2C.

The LED package 150 shown in FIG. 2B includes a substrate 141, a blue LED chip 151B, an electrode 152B, an electrode 153, a heat sink 154, an adhesive layer 146, a housing 142, a lead 143, a lead 144, and a sealing layer 145.

The blue LED chip 151B is attached to the substrate 141 by the adhesive layer 146. The blue LED chip 151B is arranged to overlap the heat sink 154 with the adhesive layer 146 interposed therebetween. There is no particular limitation on the material of the adhesive layer 146. As described below, the red LED chip 151R is attached to the electrode 152R in a manner that is electrically connected to the electrode 152R. Therefore, when the adhesive layer 146 is conductive, the LED chip of each color The adhesive layer 146 can use the same material, so it is preferable. In addition, when a conductive adhesive is used as the adhesive layer 146 in the blue LED chip and the green LED chip, the heat dissipation is improved, which is preferable. The heat sink 154 can be formed of the same material and the same process as the electrode 152B and the electrode 153.

As the substrate 141, a glass epoxy substrate, a polyimide substrate, a ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used.

The blue LED chip 151B shown in FIG. 2C has a structure in which a light emitting diode (LED) is provided on a substrate 101. The light emitting diode includes a semiconductor layer 111, an electrode 112, a light emitting layer 113, a semiconductor layer 114, an electrode 115, and an electrode 116.

The electrode 112 is electrically connected to the semiconductor layer 111. The electrode 116 is electrically connected to the semiconductor layer 114 through the electrode 115. In addition, only one of the electrode 115 and the electrode 116 may be provided. The light emitting layer 113 is sandwiched between the semiconductor layer 111 and the semiconductor layer 114. In the light-emitting layer 113, electrons and holes are bonded to emit light. One of the semiconductor layer 111 and the semiconductor layer 114 is an n-type semiconductor layer, and the other is a p-type semiconductor layer.

In the blue LED chip 151B, a stacked structure including the semiconductor layer 111, the light emitting layer 113, and the semiconductor layer 114 is formed in a manner that exhibits blue light.

In addition, in the light-emitting diodes of each color, a stacked structure including a pair of semiconductor layers and a light-emitting layer between the pair of semiconductor layers is formed so as to exhibit red, yellow, green, or blue light. For example, gallium-phosphorus compound, gallium-arsenic compound, gallium-aluminum-arsenic compound, aluminum-gallium-indium-phosphorus compound, gallium nitride, indium-gallium nitride compound, selenium-zinc compound, etc. are used for the laminate structure.

As the substrate 101, for example, a single crystal substrate such as a sapphire (Al ₂ O ₃ ) substrate, a silicon carbide (SiC) substrate, a silicon (Si) substrate, and a gallium nitride (GaN) substrate can be used.

The electrode 112 is electrically connected to the electrode 152B by a lead 143. The electrode 112 is used as a pixel electrode of a light emitting diode. The electrode 116 is electrically connected to the electrode 153 by a lead 144. The electrode 116 is used as a common electrode of the light emitting diode.

Each of the electrode 152B and the electrode 153 may be formed of one element selected from nickel, copper, silver, platinum, or gold, or an alloy material containing the element in 50% or more.

The connection between the electrode 152B and the electrode 112 and the connection between the electrode 153 and the electrode 116 can each use a wire bonding method using a hot pressing method or an ultrasonic bonding method.

As the lead 143 and the lead 144, a thin metal wire formed of gold, an alloy containing gold, copper, an alloy containing copper, or the like can be used, respectively.

As the material of the housing 142, resin can be used. The housing 142 only needs to cover at least the side surface of the blue LED chip 151B, and it may not overlap the top surface of the blue LED chip 151B. For example, the sealing layer 145 may also be exposed on the top surface side of the blue LED chip 151B. It is preferable to provide a reflector made of stainless steel or the like on the side surface inside the housing 142, specifically, around the blue LED chip 151B. Part of the light emitted by the blue LED chip 151B is reflected by the reflector, so more light can be extracted from the LED package 150.

The inside of the housing 142 is filled with a sealing layer 145. As the sealing layer 145, a resin having transparency to visible light is preferable. As the sealing layer 145, for example, ultraviolet curable resin such as epoxy resin and silicone resin, visible light curable resin, or the like can be used.

Fig. 3A shows a cross-sectional view along the chain line C-D in Fig. 1C. That is, FIG. 3A is a cross-sectional view including a red LED chip 151R, a conductive layer 131R and a conductive layer 132 electrically connected to the red LED chip 151R. In FIG. 3A, for clarity, a part of components such as wiring is omitted.

As shown in FIG. 3A, in the display device 100, the transistor 120A is electrically connected to the LED package 150 through the conductive layer 131R.

Since the transistor 120A has the same structure as the transistor 120 shown in FIG. 2A, detailed description is omitted.

An insulating layer 127 is provided on the transistor 120A, and a conductive layer 131R and a conductive layer 132 are provided on the insulating layer 127. The conductive layer 131R is electrically connected to the conductive layer 126b through an opening provided in the insulating layer 127.

The conductive layer 131R and the conductive layer 132 are each electrically connected to the LED package 150 through the conductor 133.

The LED package 150 will be described in detail with reference to FIG. 3B. In addition, the red LED chip 151R will be described in more detail with reference to FIG. 3C.

The LED package 150 shown in FIG. 3B includes a substrate 141, a red LED chip 151R, an electrode 152R, an electrode 153, an adhesive layer 146, a housing 142, a lead 144, and a sealing layer 145.

The red LED chip 151R is electrically connected to the electrode 152R through the conductive adhesive layer 146.

The red LED chip 151R shown in FIG. 3C includes an electrode 103, a semiconductor layer 117, a light emitting layer 118, a semiconductor layer 119, and an electrode 106. The red LED chip 151R may also be a light emitting diode (LED). In addition, the red LED chip has a structure in which a light emitting diode is arranged on a conductive substrate.

The electrode 103 is electrically connected to the semiconductor layer 117. The electrode 106 is electrically connected to the semiconductor layer 119. The light emitting layer 118 is sandwiched between the semiconductor layer 117 and the semiconductor layer 119. In the light-emitting layer 118, electrons and holes are bonded to emit light. One of the semiconductor layer 117 and the semiconductor layer 119 is an n-type semiconductor layer, and the other is a p-type semiconductor layer.

The electrode 103 is electrically connected to the electrode 152R through the adhesive layer 146. The electrode 103 is used as a pixel electrode of a light emitting diode. The electrode 106 is electrically connected to the electrode 153 by a lead 144. The electrode 106 is used as a common electrode of the light emitting diode.

Like the LED package 155 shown in FIG. 3D, a color conversion layer 147 may also be provided inside the housing 142. Thus, the light of the light-emitting diode is emitted to the outside of the LED package 155 through the color conversion layer 147.

In addition, FIG. 3D shows a structure in which the color conversion layer 147 is disposed above the sealing layer 145, but the layout of the color conversion layer 147 is not limited to this. For example, the color conversion layer 147 may also be dispersedly provided inside the sealing layer 145.

As the color conversion layer 147, it is preferable to use a phosphor or a quantum dot (QD: Quantum dot). In particular, the peak width of the emission spectrum of the quantum dot is narrow, so that light emission with high color purity can be obtained. Therefore, the display quality of the display device can be improved.

For example, in the case where the multiple LED chips included in the LED package 155 all include light emitting diodes that present blue light, it is preferable that a color conversion layer 147 is provided inside or on the LED package 155. Specifically, it is preferable to provide a color conversion layer 147 that converts blue light into red light at a position overlapping with the red LED chip 151R, and it is preferable to provide a blue light conversion layer at a position overlapping with the green LED chip 151G. The color conversion layer 147 for green light.

Thus, in the red sub-pixel, the light emitted by the light-emitting diode is converted from blue to red by the color conversion layer 147, and then emitted to the outside of the display device. In addition, in the green sub-pixel, the light emitted by the light-emitting diode is converted from blue to green by the color conversion layer 147, and is emitted to the outside of the display device. In addition, in the blue sub-pixel, the blue light emitted by the light-emitting diode is directly emitted to the outside of the display device.

The color conversion layer 147 is formed by a droplet ejection method (for example, an inkjet method), a coating method, an imprint method, various printing methods (screen printing method, offset printing method), and the like. In addition, a color conversion film such as a quantum dot thin film can also be used.

As the phosphor, an organic resin layer printed or coated with a phosphor, an organic resin layer mixed with a phosphor, or the like can be used.

There are no particular limitations on the material constituting the quantum dots, for example, group 14 elements, group 15 elements, group 16 elements, compounds containing multiple group 14 elements, and group 4 to group 14 elements can be mentioned. And compound of group 16 element, compound of group 2 element and group 16 element, compound of group 13 element and group 15 element, compound of group 13 element and group 17 element, group 14 element and group Compounds of group 15 elements, compounds of group 11 elements and group 17 elements, iron oxides, titanium oxides, spinel chalcogenide, semiconductor clusters, etc.

Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, and indium phosphide can be cited. , Gallium arsenide, gallium phosphide, indium nitride, gallium nitride, indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, lead selenide, lead telluride, lead sulfide, selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, arsenic selenide, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, bismuth sulfide, bismuth selenide, bismuth telluride, silicon, silicon carbide , Germanium, tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride, calcium sulfide, selenide Calcium, calcium telluride, beryllium sulfide, beryllium selenide, beryllium telluride, magnesium sulfide, magnesium selenide, germanium sulfide, germanium selenide, germanium telluride, tin sulfide, tin selenide, tin telluride, lead oxide, fluorine Copper, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, nickel oxide, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide, vanadium oxide, tungsten oxide, oxide Tantalum, titanium oxide, zirconium oxide, silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium zinc cadmium compound, indium arsenic phosphorus compound, cadmium selenium sulfur compound, cadmium selenium tellurium compound, indium gallium arsenide Compounds, indium gallium selenide compounds, indium selenide sulfur compounds, copper indium sulfur compounds, and combinations thereof. In addition, so-called alloy-type quantum dots in which the composition is expressed in an arbitrary ratio can also be used.

As the structure of quantum dots, there are core type, core shell type, core multishell type, and the like. In addition, in quantum dots, since the proportion of surface atoms is high, the reactivity is high and aggregation is likely to occur. Therefore, the surface of the quantum dot is preferably attached with a protective agent or provided with a protective group. By attaching a protective agent or providing a protective group, agglomeration can be prevented and the solubility to the solvent can be improved. In addition, the electrical stability can be improved by reducing the reactivity.

The smaller the size of the quantum dot, the larger the band gap, so the size is appropriately adjusted to obtain light of the desired wavelength. As the crystal size becomes smaller, the light emission of quantum dots migrates to the blue side (that is, to the high-energy side). Therefore, by changing the size of the quantum dots, it can be used in the ultraviolet, visible and infrared regions. Adjust the emission wavelength in the wavelength region of the spectrum. The size (diameter) of the quantum dots generally used is, for example, 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The smaller the size distribution of the quantum dot, the narrower the emission spectrum, so it can obtain light with high color purity. In addition, the shape of the quantum dots is not particularly limited, and may be spherical, rod-shaped, disc-shaped, or other shapes. Quantum dots, which are rod-shaped quantum dots, have the function of presenting directional light.

Alternatively, the LED package 155 may have a stacked structure with a color conversion layer 147 and a color layer inside or above. Thus, when the light converted by the color conversion layer 147 passes through the color layer, the purity of the light can be improved. In addition, a blue color layer may be provided at a position overlapping with the blue LED chip 151B. When the blue color layer is set, the purity of blue light can be improved. When the blue color layer is not provided, the manufacturing process can be simplified.

The colored layer is a colored layer that transmits light in a specific wavelength region. For example, a color filter that transmits light in the wavelength range of red, green, blue, or yellow can be used. Examples of materials that can be used for the color layer include metal materials, resin materials, and resin materials containing pigments or dyes.

[Structure example 2 of display device] 4 to 6 each show a cross-sectional structure example of a display device that is different from Structure Example 1 of the display device.

The main difference between the display device shown in FIGS. 4 to 6 and FIG. 2A is the structure of the transistor electrically connected to the LED package 150.

In the display device shown in FIG. 4, the transistor 120B is electrically connected to the LED package 150 through the conductive layer 131B.

The transistor 120B includes a conductive layer 121 used as a gate, an insulating layer 122 used as a gate insulating layer, a metal oxide layer 123 used as a semiconductor layer, and a pair of conductive layers used as a source and a drain. The layers 126a, 126b, the insulating layers 124a, 124b used as gate insulating layers, and the conductive layer 125 used as back gates. The conductive layer 121 and the metal oxide layer 123 overlap with the insulating layer 122 therebetween. The conductive layer 125 and the metal oxide layer 123 overlap with the insulating layer 124a and the insulating layer 124b.

An insulating layer 127 is provided on the transistor 120B, and a conductive layer 131B and a conductive layer 132 are provided on the insulating layer 127. The conductive layer 131B is electrically connected to the conductive layer 126b through an opening provided in the insulating layer 127.

In the display device shown in FIG. 5, the transistor 120C is electrically connected to the LED package 150 through the conductive layer 131B and the like.

The substrate 174 is provided with an insulating layer 175, a transistor 120C, a conductive layer 184a, a conductive layer 184b, a conductive layer 187, a conductive layer 189, an insulating layer 186, an insulating layer 188, a conductive layer 131B, and a conductive layer 132. The substrate 174 is also provided with insulating layers such as an insulating layer 162, an insulating layer 181, an insulating layer 182, an insulating layer 183, and an insulating layer 185. One or more of these insulating layers may be considered as a component of a transistor, but in this embodiment, it is not included in the component of a transistor and is described.

As the substrate 151, you can use: insulating substrates such as glass substrates, quartz substrates, sapphire substrates, ceramic substrates, etc.; or semiconductor substrates such as single crystal semiconductor substrates or polycrystalline semiconductor substrates made of silicon or silicon carbide, silicon germanium, etc. Compound semiconductor substrates, SOI substrates, etc.

The substrate 151 preferably blocks visible light (has impermeability to visible light). When the substrate 151 blocks visible light, light entering the transistor 120C formed on the substrate 151 from the outside can be suppressed. However, one embodiment of the present invention is not limited to this, and the substrate 151 may be transparent to visible light.

An insulating layer 175 is provided on the substrate 174. The insulating layer 175 is used as a barrier layer to prevent impurities such as water or hydrogen from diffusing from the substrate 174 to the transistor 120C and oxygen from escaping from the metal oxide layer 165 to the insulating layer 175 side. As the insulating layer 175, for example, a film such as an aluminum oxide film, a hafnium oxide film, a silicon nitride film, etc., which is less likely to diffuse hydrogen or oxygen than a silicon oxide film can be used.

The transistor 120C includes a conductive layer 161, an insulating layer 163, an insulating layer 164, a metal oxide layer 165, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, and the like.

The metal oxide layer 165 includes a channel formation region. The metal oxide layer 165 includes a first area overlapping with one of the pair of conductive layers 166, a second area overlapping with the other of the pair of conductive layers 166, and a first area between the first area and the second area. Three regions.

A conductive layer 161 and an insulating layer 162 are provided on the insulating layer 175, and an insulating layer 163 and an insulating layer 164 are provided to cover the conductive layer 161 and the insulating layer 162. The metal oxide layer 165 is provided on the insulating layer 164. The conductive layer 161 is used as a gate electrode, and the insulating layer 163 and the insulating layer 164 are used as a gate insulating layer. The conductive layer 161 overlaps the metal oxide layer 165 via the insulating layer 163 and the insulating layer 164. The insulating layer 163 is preferably used as a barrier layer like the insulating layer 175. The insulating layer 164 in contact with the metal oxide layer 165 is preferably an oxide insulating film such as a silicon oxide film.

Here, the height of the top surface of the conductive layer 161 is substantially the same as the height of the top surface of the insulating layer 162. For example, an opening is provided in the insulating layer 162, and the conductive layer 161 is formed to fill the opening, and then planarized by a CMP method or the like, so that the height of the top surface of the conductive layer 161 and the height of the insulating layer 162 can be made The height of the top surface is uniform. Thus, the size of the transistor 120C can be reduced.

A pair of conductive layers 166 are separately provided on the metal oxide layer 165. A pair of conductive layers 166 are used as source and drain. An insulating layer 181 is provided covering the metal oxide layer 165 and the pair of conductive layers 166, and an insulating layer 182 is provided on the insulating layer 181. The insulating layer 181 and the insulating layer 182 are provided with an opening reaching the metal oxide layer 165, and the insulating layer 167 and the conductive layer 168 are buried in the opening. This opening overlaps with the above-mentioned third area. The insulating layer 167 overlaps the side surface of the insulating layer 181 and the side surface of the insulating layer 182. The conductive layer 168 overlaps the side surface of the insulating layer 181 and the side surface of the insulating layer 182 via the insulating layer 167. The conductive layer 168 is used as a gate electrode, and the insulating layer 167 is used as a gate insulating layer. The conductive layer 168 overlaps the metal oxide layer 165 with the insulating layer 167 interposed therebetween.

Here, the height of the top surface of the conductive layer 168 is substantially the same as the height of the top surface of the insulating layer 182. For example, an opening is provided in the insulating layer 182, the insulating layer 167 and the conductive layer 168 are formed by filling the openings, and then planarization is performed, so that the height of the top surface of the conductive layer 168 and the top surface of the insulating layer 182 can be made The heights are consistent. Thus, the size of the transistor 120C can be reduced.

In addition, an insulating layer 183 and an insulating layer 185 are provided to cover the top surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168. The insulating layer 181 and the insulating layer 183 are preferably used as barrier layers similarly to the insulating layer 175. By covering the pair of conductive layers 166 with the insulating layer 181, the oxidation of the pair of conductive layers 166 caused by the oxygen contained in the insulating layer 182 can be suppressed.

The plug electrically connected to one of the pair of conductive layers 166 and the conductive layer 187 is embedded in the openings provided in the insulating layer 181, the insulating layer 182, the insulating layer 183, and the insulating layer 185. The plug preferably includes a conductive layer 184a in contact with the side surface of the opening and the top surface of one of the pair of conductive layers 166, and a conductive layer 184b buried inside the conductive layer 184a. At this time, as the conductive layer 184a, it is preferable to use a conductive material that does not easily diffuse hydrogen and oxygen.

A conductive layer 187 is provided on the insulating layer 185, and an insulating layer 186 is provided on the conductive layer 187. The insulating layer 186 is provided with an opening reaching the conductive layer 187, and the conductive layer 189 is buried in the opening. The conductive layer 189 is used as a plug that electrically connects the conductive layer 187 and the conductive layer 131B.

One of the pair of conductive layers 166 is electrically connected to the conductive layer 131B through the conductive layer 184a, the conductive layer 184b, the conductive layer 187, and the conductive layer 189.

As described above, in the transistor 120C shown in FIG. 5, the height of the top surface of the conductive layer 161 is substantially the same as the height of the top surface of the insulating layer 162. In addition, in the transistor 120C shown in FIG. 5, the height of the top surface of the conductive layer 168 is substantially the same as the height of the top surface of the insulating layer 182.

In this way, the display device of this embodiment preferably includes a transistor in which the height of the top surface of the gate electrode is substantially the same as the height of the top surface of the insulating layer. For example, the top surface of the gate electrode and the top surface of the insulating layer are flattened by using a CMP (Chemical Mechanical Polishing) method or the like for planarization to make the height of the top surface of the gate electrode and the top surface of the insulating layer Highly consistent.

The transistor of this structure is easy to reduce its size. By reducing the size of the transistor, the size of the pixel can be reduced, thereby improving the definition of the display device.

In the display device shown in FIG. 6, similar to the display device shown in FIG. 5, the transistor 120C is electrically connected to the LED package 150 through the conductive layer 131B and the like.

The display device shown in FIG. 6 includes a stack of a transistor 190 having a channel formation region in a substrate 191 and a transistor 120C having a channel formation region in a metal oxide.

As the substrate 191, a single crystal silicon substrate is preferably used. The transistor 190 includes a conductive layer 195, an insulating layer 194, an insulating layer 196, and a pair of low resistance regions 193. The conductive layer 195 is used as a gate. The insulating layer 194 is located between the conductive layer 195 and the substrate 191 and is used as a gate insulating layer. The insulating layer 196 is provided to cover the side surface of the conductive layer 195 and is used as a side wall. The pair of low-resistance regions 193 are regions doped with impurities in the substrate 191, one of which is used as the source of the transistor 190, and the other is used as the drain of the transistor 190.

In addition, an element separation layer 192 is provided between two adjacent transistors so as to be buried in the substrate 191.

An insulating layer 199 is provided to cover the transistor 190, and a conductive layer 198 is provided on the insulating layer 199. The conductive layer 198 is electrically connected to one of the pair of low-resistance regions 193 through the opening of the insulating layer 199. In addition, an insulating layer 171 is provided to cover the conductive layer 198, and a conductive layer 172 is provided on the insulating layer 171. The conductive layer 198 and the conductive layer 172 are each used as wiring. In addition, an insulating layer 173 and an insulating layer 175 are provided to cover the conductive layer 172, and a transistor 120C is provided on the insulating layer 175. The laminated structure from the insulating layer 175 to the LED package 150 is the same as that of the display device shown in FIG. 5, so detailed description is omitted.

The transistor 120C may be used as a transistor constituting a pixel circuit. In addition, the transistor 190 is used as a transistor constituting a pixel circuit or a transistor constituting a driving circuit (one or both of a gate driver and a source driver) for driving the pixel circuit. In addition, both the transistor 120C and the transistor 190 can be used as transistors constituting various circuits such as an arithmetic circuit and a memory circuit.

By adopting this structure, in addition to the pixel circuit, a driver circuit and the like can be formed directly under the light emitting diode. Therefore, the display device can be miniaturized compared with the case where the driver circuit is provided outside the display portion. In addition, a display device with a narrow frame (narrow non-display area) can be realized.

The display device of one embodiment of the present invention can also be used in a display device (also referred to as an input/output device or a touch panel) equipped with a touch sensor. The structure of each display device described above can be used for a touch panel.

There is no particular limitation on the sensing element (also referred to as a sensing element) included in the touch panel of an embodiment of the present invention. Various sensors that can detect the proximity or contact of a detection object such as a finger and a stylus can be used as the sensing element.

For example, as the method of the sensor, various methods such as an electrostatic capacitance type, a resistive film type, a surface acoustic wave type, an infrared type, an optical type, and a pressure sensitive type can be used.

As the capacitance type, there are a surface type capacitance type, a projection type capacitance type, and the like. In addition, as the projection type electrostatic capacitance type, there are a self-capacitance type, a mutual capacitance type, and the like. It is preferable to use a mutual capacitance type because it can perform multi-point sensing at the same time.

The touch panel of one embodiment of the present invention may adopt a structure in which separately formed display devices and detection elements are bonded, and one or both of the substrate supporting the display element and the counter substrate are provided with electrodes constituting the detection element, etc. Various structures such as structure.

As described above, the display device of this embodiment can be manufactured by mounting an LED package on a substrate on which a plurality of light emitting diodes are formed. Therefore, the difficulty of manufacturing the display device can be reduced and the yield can be improved. In addition, by combining micro LEDs and transistors using metal oxides, a display device with reduced power consumption can be realized.

In addition, since the display device of the present embodiment can reduce the size of the transistor, it is easy to improve the resolution and is suitable for electronic devices including a smaller display portion.

This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of structural examples are shown in one embodiment, the structural examples can be appropriately combined.

Embodiment 2 In this embodiment, a display device according to an embodiment of the present invention will be described with reference to FIG. 7.

[Pixel] The display device of this embodiment includes a plurality of pixels arranged in a matrix of m rows and n columns (m and n are both integers of 1 or more). FIG. 7 shows an example of a circuit diagram of the pixel 200 (i, j) (i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less).

The pixel 200 (i, j) shown in FIG. 7 includes a light-emitting element 210, a switch SW21, a switch SW22, a transistor M, and a capacitor C1.

In this embodiment, an example in which a transistor is used as the switch SW21 is shown. The gate of the switch SW21 is electrically connected to the scan line GL1(i). One of the source and drain of the switch SW21 is electrically connected to the signal line SL(j), and the other is electrically connected to the gate of the transistor M.

In this embodiment, an example in which a transistor is used as the switch SW22 is shown. The gate of the switch SW22 is electrically connected to the scan line GL2(i). One of the source and drain of the switch SW22 is electrically connected to the wiring COM, and the other is electrically connected to the gate of the transistor M.

The gate of the transistor M is electrically connected to one electrode of the capacitor C1, the other of the source and drain of the switch SW21, and the other of the source and drain of the switch SW22. One of the source and drain of the transistor M is electrically connected to the wiring CATHODE, and the other is electrically connected to the cathode of the light-emitting element 210.

The other electrode of the capacitor C1 is electrically connected to the wiring CATHODE.

The anode of the light emitting element 210 is electrically connected to the wiring ANODE.

The scan line GL1(i) has a function of supplying a selection signal. The scan line GL2(i) has a function of supplying control signals. The signal line SL(j) has a function of supplying image signals. Each of the wiring VCOM, the wiring CATHODE, and the wiring ANODE is supplied with a fixed potential. The anode side of the light emitting element 210 may be set to a high potential, and the cathode side may be set to a lower potential than the anode side.

The switch SW21 is controlled by a selection signal, and is used as a selection transistor for controlling the selection state of the pixel 200.

The transistor M is used as a driving transistor that controls the current flowing through the light emitting element 210 according to the potential supplied to the gate. When the switch SW21 is in the ON state, the image signal supplied to the signal line SL(j) is supplied to the gate of the transistor M, and the light-emitting brightness of the light-emitting element 210 can be controlled according to its potential.

The switch SW22 has a function of controlling the gate potential of the transistor M in accordance with a control signal. Specifically, the switch SW22 can supply the electric potential for turning the transistor M into a non-conducting state to the gate of the transistor M.

For example, the switch SW22 can be used for pulse width control. In the period based on the control signal, current may be supplied from the transistor M to the light emitting element 210. Alternatively, the light emitting element 210 may express gray scales according to the image signal and the control signal.

Here, as the transistor included in the pixel 200 (i, j), it is preferable to use a metal oxide (oxide semiconductor) transistor for each of the semiconductor layers forming the channel.

The use of metal oxide transistors with a wider band gap than silicon and a smaller carrier density than silicon can achieve extremely small off-state currents. As a result, since the off-state current is small, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. Therefore, as the switch SW21 and the switch SW22 connected in series with the capacitor C1, in particular, a transistor using an oxide semiconductor is used. In addition, by also using other transistors using oxide semiconductor transistors, manufacturing costs can be reduced.

In addition, as the transistor included in the pixel 200 (i, j), a semiconductor using silicon transistor forming a channel can be used. In particular, it is preferable to use high-crystalline silicon such as monocrystalline silicon or polycrystalline silicon, which can achieve high field-efficiency mobility and higher-speed operation.

In addition, it is also possible to adopt a structure in which one or more of the transistors included in the pixel 200 (i, j) uses an oxide semiconductor-based transistor, and as the other transistors, a silicon-based transistor is used.

Note that in FIG. 7, the transistor is represented as an n-channel type transistor, but a p-channel type transistor may also be used.

[Transistor] Next, transistors that can be used in display devices will be explained.

There is no particular limitation on the transistor structure included in the display device. For example, planar transistors, interlaced transistors, or inverse interlaced transistors can be used. In addition, all transistors can have a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

As the transistor included in the display device, for example, a transistor using a metal oxide for the channel formation region can be used. Therefore, a transistor with extremely low off-state current can be realized.

Alternatively, as the transistor included in the display device, a transistor containing silicon in the channel formation region can be used. Examples of the transistor include a transistor containing amorphous silicon, a transistor containing crystalline silicon (typically low-temperature polycrystalline silicon), and a transistor containing single crystal silicon.

[Metal oxide] Hereinafter, metal oxides that can be used for the semiconductor layer will be explained.

The metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition, it is preferable to further contain aluminum, gallium, yttrium, tin, or the like. In addition, it may also contain one or more selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium.

Here, consider the case where the metal oxide is an In-M-Zn oxide containing indium, element M, and zinc. In addition, the element M is aluminum, gallium, yttrium, tin, or the like. In addition, as elements applicable to element M, there are boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like. Note that as the element M, the above-mentioned multiple elements may be combined.

The metal oxide film can be formed by a sputtering method. In addition, PLD method, PECVD method, thermal CVD method, ALD method, vacuum evaporation method, etc. can also be used.

In this specification and the like, a metal oxide containing nitrogen may also be referred to as a metal oxide. In addition, the metal oxide containing nitrogen may also be referred to as metal oxynitride. For example, a metal oxide containing nitrogen such as zinc oxynitride (ZnON) can be used for the semiconductor layer.

In this manual, etc., it may be described as CAAC (c-axis aligned crystal) or CAC (Cloud-Aligned Composite). CAAC refers to an example of crystalline structure, and CAC refers to an example of function or material composition.

For example, as the semiconductor layer, CAC (Cloud-Aligned Composite)-OS can be used.

CAC-OS or CAC-metal oxide has a conductive function in a part of the material, an insulating function in another part of the material, and a semiconductor function as an entire part of the material. In addition, when CAC-OS or CAC-metal oxide is used for the semiconductor layer of the transistor, the function of conductivity is the function of allowing electrons (or holes) used as carriers to flow, and the function of insulation It is a function to prevent electrons used as carriers from flowing. With the complementary function of conductivity and insulation, CAC-OS or CAC-metal oxide can have a switching function (on/off function). By separating each function in CAC-OS or CAC-metal oxide, each function can be maximized.

In addition, CAC-OS or CAC-metal oxide includes conductive regions and insulating regions. The conductive region has the above-mentioned conductivity function, and the insulating region has the above-mentioned insulating function. In addition, in the material, the conductive region and the insulating region are sometimes separated at the nanoparticle level. In addition, the conductive region and the insulating region are sometimes unevenly distributed in the material. In addition, conductive regions whose edges are blurred and connected in a cloud shape are sometimes observed.

In addition, in CAC-OS or CAC-metal oxide, conductive regions and insulating regions may be dispersed in the material in a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less.

In addition, CAC-OS or CAC-metal oxide is composed of components with different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to the insulating region and a component having a narrow gap due to the conductive region. In this configuration, when the carriers are allowed to flow, the carriers mainly flow in a component having a narrow gap. In addition, the component with a narrow gap interacts with the component with a narrow gap by complementing the component with a wide gap to allow carriers to flow through the component with a wide gap. Therefore, when the above-mentioned CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, a high current driving force can be obtained in the conduction state of the transistor, that is, a large on-state current and a high field efficiency mobility.

In other words, CAC-OS or CAC-metal oxide can also be referred to as matrix composite or metal matrix composite.

Oxide semiconductors (metal oxides) are classified into single crystal oxide semiconductors and non-single crystal oxide semiconductors. Examples of non-single crystal oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor), a-like OS (amorphous-like oxide semiconductor), and Crystalline oxide semiconductor, etc.

CAAC-OS has c-axis orientation, and its multiple nanocrystals are connected in the a-b plane direction and the crystal structure has distortion. Note that distortion refers to a portion where the direction of the lattice arrangement changes between a region where the crystal lattice arrangement is consistent and other regions where the crystal lattice arrangement is consistent in a region where a plurality of nanocrystals are connected.

Although nanocrystals are basically hexagonal, they are not limited to regular hexagons, and some are not regular hexagons. In addition, the distortion sometimes has a pentagonal or heptagonal lattice arrangement. In addition, in CAAC-OS, no clear grain boundary is observed even in the vicinity of distortion. That is, it can be seen that the formation of grain boundaries can be suppressed due to the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the low density of the arrangement of oxygen atoms in the a-b plane direction or the change in the bonding distance between atoms due to the substitution of metal elements.

CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as In layer) and elements M, zinc and oxygen are laminated的层 (hereinafter referred to as (M, Zn) layer). In addition, indium and element M may be substituted for each other. When indium is substituted for element M in the (M, Zn) layer, the layer may also be expressed as a (In, M, Zn) layer. In addition, when the element M is substituted for indium in the In layer, the layer may also be expressed as an (In, M) layer.

CAAC-OS is a metal oxide with high crystallinity. On the other hand, in CAAC-OS, it is not easy to observe clear grain boundaries, and therefore it is not easy to decrease the electron mobility due to grain boundaries. In addition, the crystallinity of metal oxides may be reduced due to the entry of impurities or the generation of defects. Therefore, it can be said that CAAC-OS has fewer impurities or defects (oxygen vacancy (also called V _O (oxygen vacancy)), etc.) Metal oxide. Therefore, the physical properties of the metal oxide containing CAAC-OS are stable. Therefore, the metal oxide containing CAAC-OS has high heat resistance and high reliability.

In nc-OS, the arrangement of atoms in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less) has periodicity. In addition, nc-OS has no regularity in crystal orientation between different nanocrystals. Therefore, no alignment was observed in the entire film. Therefore, sometimes nc-OS is not different from a-like OS or amorphous oxide semiconductor in some analysis methods.

In addition, indium-gallium-zinc oxide (hereinafter, IGZO), which is one of metal oxides containing indium, gallium, and zinc, may have a stable structure when it is composed of the above-mentioned nanocrystal. In particular, IGZO tends to be difficult to grow crystals in the atmosphere, so sometimes it is made of small crystals (for example, IGZO), compared to when IGZO is formed of large crystals (here, a few mm or a few cm). , The above-mentioned nanocrystals are structurally stable when formed.

a-like OS is a metal oxide with a structure between nc-OS and amorphous oxide semiconductor. a-like OS contains voids or low-density areas. In other words, the crystallinity of a-like OS is lower than that of nc-OS and CAAC-OS.

Oxide semiconductors (metal oxides) have various structures and various characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of amorphous oxide semiconductor, polycrystalline oxide semiconductor, a-like OS, nc-OS, and CAAC-OS.

The metal oxide film used as the semiconductor layer can be formed using either or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the oxygen flow ratio (oxygen partial pressure) when forming the metal oxide film. However, in the case of obtaining a transistor with a high field effect mobility, the oxygen flow ratio (oxygen partial pressure) when forming the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, more preferably 7% or more and 15% or less.

The energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and still more preferably 3 eV or more. In this way, by using a metal oxide with a wide energy gap, the off-state current of the transistor can be reduced.

This embodiment mode can be combined with other embodiment modes as appropriate.

Embodiment 3 In this embodiment, an electronic device according to an embodiment of the present invention will be described using FIGS. 8A to 12F.

The electronic device of this embodiment includes the display device of one embodiment of the present invention in the display portion. The display device of one embodiment of the present invention has high display quality and low power consumption. In addition, the display device according to an embodiment of the present invention can easily achieve high definition and large size. Therefore, it can be used for display parts of various electronic devices.

As electronic devices, for example, in addition to televisions, desktop or laptop personal computers, monitors used in computers, digital signage, pachinko machines, and other large game machines with larger screens, you can also cite It produces digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, audio reproduction devices, etc.

In particular, because the display device of one embodiment of the present invention can improve the definition, it can be suitably used for an electronic device including a smaller display portion. This electronic device can be suitably used for wearable devices that can be worn on the head, such as watch-type or bracelet-type information terminal equipment (wearable devices), head-mounted displays and other VR (Virtual Reality) equipment, glasses-type AR (Augmented Reality) equipment or MR (Mixed Reality) equipment, etc.

The electronic device of this embodiment may also include a sensor (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance , Sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared).

The electronic device of this embodiment may have various functions. For example, it can have the following functions: the function of displaying various information (still images, moving images, text images, etc.) on the display; the function of the touch panel; the function of displaying the calendar, date or time, etc.; the execution of various software (programs) ); the function of wireless communication; the function of reading programs or data stored in the storage medium; etc.

FIG. 8A shows a perspective view of the glasses-type electronic device 900. The electronic device 900 includes a pair of display panels 901, a pair of housings 902, a pair of optical members 903, a pair of mounting parts 904, and the like.

The electronic device 900 can project the image displayed by the display panel 901 on the display area 906 in the optical member 903. Since the optical member 903 is light-transmissive, the user can see the image displayed in the display area 906 superimposed on the transmitted image seen through the optical member 903. Therefore, the electronic device 900 is an electronic device capable of AR display.

The display panel 901 included in the electronic device 900 preferably has a camera function in addition to an image display function. At this time, the electronic device 900 may receive the light incident on the display panel 901 through the optical member 903, and convert it into an electrical signal for output. In this way, the user's eyes or eyes and its vicinity can be photographed, and output to the outside or the computing unit included in the electronic device 900 as image information.

One housing 902 is provided with a camera 905 capable of photographing the front. In addition, although not shown, any housing 902 is provided with a wireless receiver or a connector that can be connected to a cable, so that image signals and the like can be supplied to the housing 902. In addition, by disposing an acceleration sensor such as a gyro sensor in the housing 902, the direction of the user's head can be detected and an image corresponding to the direction can be displayed on the display area 906. In addition, the housing 902 is preferably provided with a battery, which can be charged wirelessly or wiredly.

An image projection method with respect to the display area 906 of the electronic device 900 will be described with reference to FIG. 8B. A display panel 901, a lens 911, and a reflective plate 912 are provided inside the housing 902. In addition, a portion corresponding to the display area 906 of the optical member 903 includes a reflective surface 913 used as a half mirror.

The light 915 emitted by the display panel 901 passes through the lens 911 and is reflected by the reflection plate 912 to the optical member 903 side. In the interior of the optical member 903, the light 915 is repeatedly totally reflected on the end surface of the optical member 903, and when it reaches the reflective surface 913, an image is projected on the reflective surface 913. Thus, the user can see both the light 915 reflected on the reflective surface 913 and the transmitted light 916 passing through the optical member 903 (including the reflective surface 913).

8A and 8B show examples in which both the reflecting plate 912 and the reflecting surface 913 have curved surfaces. Thereby, compared with the case where they are flat, the flexibility of the optical design can be improved, so that the thickness of the optical member 903 can be reduced. In addition, the reflecting plate 912 and the reflecting surface 913 may be flat.

As the reflection plate 912, a member having a mirror surface can be used, and the member preferably has high reflectivity. In addition, as the reflecting surface 913, a half mirror using reflection of a metal film may be used, but when a prism or the like using total reflection is used, the transmittance of the transmitted light 916 can be improved.

Here, the electronic device 900 preferably has a mechanism for adjusting one or both of the distance and angle between the lens 911 and the display panel 901. In this way, focus adjustment, image enlargement, reduction, etc. can be performed. For example, it suffices to adopt a structure in which one or both of the lens 911 and the display panel 901 can move in the optical axis direction.

The electronic device 900 preferably has a mechanism capable of adjusting the angle of the reflector 912. By changing the angle of the reflector 912, the position of the display area 906 for displaying the image can be changed. As a result, the display area 906 can be arranged in an optimal position according to the position of the user's eyes.

The display panel 901 can apply the display device of one embodiment of the present invention. Therefore, an electronic device 900 capable of displaying extremely high-definition display can be realized.

9A and 9B show perspective views of the goggle type electronic device 950. 9A is a perspective view showing the front, plane, and left side of the electronic device 950, and FIG. 9B is a perspective view showing the back, bottom, and right side of the electronic device 950.

The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting parts 954, a buffer member 955, a pair of lenses 956, and the like. Each of the pair of display panels 951 is disposed at a position inside the housing 952 that can be seen through the lens 956.

The electronic device 950 is an electronic device for VR. The user with the electronic device 950 installed can see the image displayed on the display panel 951 through the lens 956. In addition, by causing a pair of display panels 951 to display images different from each other, three-dimensional display using parallax can also be performed.

An input terminal 957 and an output terminal 958 are provided on the back side of the housing 952. The input terminal 957 can be connected to the input terminal 957 with a cable that supplies image signals from an image output device or the like or power for charging a battery provided in the housing 952. The output terminal 958 is used as a sound output terminal, for example, and can be connected to earphones, headphones, or the like. In addition, when audio data can be output by wireless communication or when audio is output from an external video output device, the audio output terminal may not be provided.

The electronic device 900 preferably has a mechanism in which the left and right positions of the lens 956 and the display panel 951 can be adjusted to position the lens 956 and the display panel 951 at the most suitable position according to the position of the user's eyes. In addition, it is also preferable to have a mechanism in which the focus is adjusted by changing the distance between the lens 956 and the display panel 951.

The display panel 951 can apply the display device of one embodiment of the present invention. Therefore, an electronic device 950 capable of displaying extremely high-definition display can be realized. As a result, the user can feel a sense of high realism.

The cushioning member 955 is a part that contacts the user's face (forehead, cheeks, etc.). By making the cushioning member 955 closely contact the user's face, light leakage can be prevented, and the sense of realism can be further improved. The cushioning member 955 preferably uses a soft material to closely contact the user's face when the user installs the electronic device 950. For example, materials such as rubber, silicone rubber, polyurethane, and sponge can be used. In addition, when cloth or leather (natural leather or synthetic leather) is used as the cushioning member 955 to cover the surface of a sponge or the like, a gap is not easily generated between the user's face and the cushioning member 955, so that it can be appropriately prevented. Light leak. When the cushioning member 955 and the mounting part 954, etc., which are in contact with the user's skin, have a detachable structure, they are easy to clean and exchange, which is preferable.

The electronic device 6500 shown in FIG. 10A is a portable information terminal device that can be used as a smart phone.

The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

The display unit 6502 can use the display device according to one embodiment of the present invention.

FIG. 10B is a schematic cross-sectional view of the end of the microphone 6506 including the housing 6501.

The display surface side of the housing 6501 is provided with a light-transmitting protective member 6510, and the space surrounded by the housing 6501 and the protective member 6510 is provided with a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printed circuit board 6517, battery 6518, etc.

The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

In the area outside the display portion 6502, a part of the display panel 6511 is folded back, and the FPC 6515 is connected to the folded part. FPC6515 is installed with IC6516. The FPC 6515 is connected to the terminals provided on the printed circuit board 6517.

The display panel 6511 may use the flexible display of one embodiment of the present invention. As a result, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. In addition, by folding a part of the display panel 6511 to provide a connection part with the FPC 6515 on the back of the pixel part, an electronic device with a narrow frame can be realized.

Fig. 11A shows an example of a television. In the television 7100, a display unit 7000 is incorporated in a housing 7101. Here, a structure in which the housing 7101 is supported by the bracket 7103 is shown.

The display device according to one embodiment of the present invention can be applied to the display unit 7000.

The operation of the television 7100 shown in FIG. 11A can be performed by using the operation switch provided in the housing 7101 or the remote controller 7111 provided separately. In addition, a touch sensor may be provided in the display section 7000, and the television 7100 may be operated by touching the display section 7000 with a finger or the like. In addition, the remote controller 7111 may include a display unit that displays the data output from the remote controller 7111. By using the operation keys or the touch panel of the remote controller 7111, the channel and volume can be operated, and the image displayed on the display unit 7000 can be operated.

In addition, the television 7100 includes a receiver, a modem, and the like. You can receive general TV broadcasts by using the receiver. Furthermore, by connecting the modem to a wired or wireless communication network, one-way (from sender to receiver) or two-way (between sender and receiver or between receivers, etc.) information communication can be carried out.

Fig. 11B shows an example of a notebook personal computer. The notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

The display device according to one embodiment of the present invention can be applied to the display unit 7000.

11C and 11D show an example of a digital signage.

The digital sign 7300 shown in FIG. 11C includes a housing 7301, a display portion 7000, a speaker 7303, and the like. In addition, it may also include LED lights, operation keys (including power switches or operation switches), connection terminals, various sensors, microphones, etc.

FIG. 11D shows a digital signage 7400 installed on a cylindrical column 7401. The digital signage 7400 includes a display portion 7000 arranged along the curved surface of the pillar 7401.

In FIGS. 11C and 11D, the display device according to one embodiment of the present invention can be applied to the display unit 7000.

The larger the display 7000, the more information can be provided at one time. The larger the display portion 7000 is, the easier it is to attract people's attention, and for example, the effect of advertising can be improved.

By using a touch panel for the display portion 7000, not only can still images or moving images be displayed on the display portion 7000, the user can also operate intuitively, which is preferable. In addition, when it is used to provide information such as route information or traffic information, it can be intuitively operated to improve ease of use.

As shown in FIGS. 11C and 11D, the digital signage 7300 or the digital signage 7400 can preferably be linked with information terminal equipment 7311 or information terminal equipment 7411 such as a smartphone carried by the user through wireless communication. For example, the advertisement information displayed on the display part 7000 may be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. In addition, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display section 7000 can be switched.

In addition, the screen of the information terminal device 7311 or the information terminal device 7411 can be used as the operating unit (controller) to execute the game on the digital signage 7300 or the digital signage 7400. In this way, unspecified multiple users can participate in the game at the same time and enjoy the game.

The electronic device shown in FIGS. 12A to 12F includes a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), a connection terminal 9006, and a sensor 9007 (the sensor has the following factors to measure Functions: force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity , Tilt, vibration, smell or infrared), microphone 9008, etc.

The electronic devices shown in FIGS. 12A to 12F have various functions. For example, it can have the following functions: the function of displaying various information (still images, moving images, text images, etc.) on the display; the function of the touch panel; the function of displaying the calendar, date or time, etc.; by using various software (Program) The function of controlling processing; the function of performing wireless communication; the function of reading out the program or data stored in the storage medium and processing it; etc. Note that the functions that the electronic device can have are not limited to the above-mentioned functions, but can have various functions. The electronic device may include a plurality of display parts. In addition, it is also possible to install a camera or the like in the electronic device to have the function of shooting still images or moving images, and storing the captured images in a storage medium (external storage medium or storage medium built into the camera) ; The function of displaying the captured images on the display unit; etc.

Hereinafter, the electronic device shown in FIGS. 12A to 12F will be described in detail.

FIG. 12A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used as a smart phone, for example. Note that in the portable information terminal 9101, a speaker 9003, a connection terminal 9006, a sensor 9007, etc. may also be provided. In addition, as a portable information terminal 9101, text or image information can be displayed on multiple surfaces. Three examples of diagrams 9050 are shown in FIG. 12A. In addition, information 9051 shown in a rectangle with a dotted line may be displayed on another surface of the display unit 9001. As an example of the information 9051, you can cite information that reminds you to receive e-mail, SNS, or telephone; the title of the e-mail or SNS, etc.; the name of the sender of the e-mail or SNS, etc.; date; time; battery remaining; and Display of signal strength received by antenna, etc. Alternatively, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

FIG. 12B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, in a state where the portable information terminal 9102 is placed in a jacket pocket, the user can confirm the information 9053 displayed at a position viewed from above the portable information terminal 9102. The user can confirm the display without taking the portable information terminal 9102 out of the pocket, thereby being able to determine whether to answer the call.

FIG. 12C is a perspective view showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used as a smart watch, for example. In addition, the display surface of the display portion 9001 is curved, and display can be performed along the curved display surface. In addition, the portable information terminal 9200 can perform hands-free calls by communicating with a headset capable of wireless communication, for example. In addition, by using the connection terminal 9006, the portable information terminal 9200 can perform data transmission or charge with other information terminals. Charging can also be done by wireless power supply.

12D, 12E, and 12F are perspective views showing a portable information terminal 9201 that can be folded. In addition, FIG. 12D is a perspective view of the portable information terminal 9201 in an unfolded state, FIG. 12F is a perspective view of a folded state, and FIG. 12E is halfway when one of the state of FIG. 12D and the state of FIG. 12F is switched to the other. A perspective view of the state. The portable information terminal 9201 has good portability in the folded state, and in the unfolded state, because it has a large display area that is seamlessly spliced, the display has a strong viewability. The display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. The display part 9001 may be curved in the range of a radius of curvature of 0.1 mm or more and 150 mm or less, for example.

This embodiment mode can be combined with other embodiment modes and examples as appropriate. Example

In this example, a result obtained by manufacturing a display device according to an embodiment of the present invention will be described.

In this embodiment, an active matrix display device is manufactured, in which the size of the display portion is 2.23 inches diagonally, the number of effective pixels is 20×20, and the pixel size is 2000 μm×2000 μm (the mounting pitch of the LED package).

As the display element, a 1mm □ LED package including three colors of red, green, and blue small LED chips is used.

As the transistor, a TGSA (Top Gate Self-Alignment) structure in which a crystalline metal oxide is used for the semiconductor layer is used. As the metal oxide, an In-Ga-Zn-based oxide is used.

There is no built-in gate driver and source driver.

The pixel circuit of the display device of this embodiment corresponds to the pixel circuit shown in FIG. 7.

The display device of this embodiment has the top structure shown in FIGS. 1A to 1C and the cross-sectional structure shown in FIGS. 2A to 2C and FIGS. 3A to 3C. In addition, the insulating layer 104 and the resin 129 are not provided.

The substrate 102 uses a glass substrate. The conductive layer 131R, the conductive layer 131G, the conductive layer 131B, and the conductive layer 132 use a laminated structure of a titanium film about 100 nm thick, an aluminum film about 400 nm thick, and a titanium film about 100 nm thick. That is, the layer in contact with the conductor 133 in each of the conductive layer 131R, the conductive layer 131G, the conductive layer 131B, and the conductive layer 132 is a titanium film. The protective layer 128 uses an acrylic resin film having a thickness of about 2 μm.

A laminated structure from the transistor 120 to the protective layer 128 is formed on the substrate 102, and then silver paste is applied as a conductor 133 on the conductive layer 131R, the conductive layer 131G, the conductive layer 131B and the conductive layer 132, and the LED package 150 is mounted .

FIG. 13 shows a display photograph of the display device of this embodiment.

As described above, in this embodiment, an active matrix display device is manufactured by mounting an LED package on a substrate formed with a transistor using a metal oxide as a semiconductor layer. In addition, as shown in FIG. 13, the display device manufactured in this embodiment can obtain good display results.

C1: Capacitor GL1: Scan line GL2: Scan line SW21: switch SW22: switch 100: display device 100A: display device 101: substrate 102: substrate 103: Electrode 104: insulating layer 106: Electrode 108: Wiring 109: Circuit 110: Display 111: semiconductor layer 112: Electrode 113: Emitting layer 114: semiconductor layer 115: Electrode 116: Electrode 117: semiconductor layer 118: Emitting layer 119: Semiconductor layer 120: Transistor 120A: Transistor 120B: Transistor 120C: Transistor 121: conductive layer 122: insulating layer 123: metal oxide layer 123i: channel formation area 123n: low resistance area 124: Insulation layer 124a: insulating layer 124b: insulating layer 125: conductive layer 126a: conductive layer 126b: conductive layer 127: Insulation layer 128: protective layer 129: Resin 130: pixels 131B: conductive layer 131G: conductive layer 131R: conductive layer 132: conductive layer 133: Conductor 141: Substrate 142: Shell 143: Lead 144: Lead 145: Sealing layer 146: Adhesive layer 147: color conversion layer 150: LED package 151: substrate 151B: Blue LED chip 151G: Green LED chip 151R: Red LED chip 152B: Electrode 152G: Electrode 152R: Electrode 153: Electrode 154: heat sink 155: LED package 161: conductive layer 162: Insulation layer 163: Insulation layer 164: Insulation layer 165: metal oxide layer 166: conductive layer 167: Insulation layer 168: conductive layer 171: Insulation layer 172: conductive layer 173: Insulation layer 174: Substrate 175: Insulation layer 181: Insulation layer 182: Insulation layer 183: Insulation layer 184a: conductive layer 184b: conductive layer 185: insulating layer 186: Insulation layer 187: Conductive layer 188: Insulation layer 189: conductive layer 190: Transistor 191: substrate 192: component separation layer 193: Low resistance area 194: Insulation layer 195: conductive layer 196: Insulation layer 198: conductive layer 199: Insulation layer 200: pixels 210: light-emitting element 900: Electronic device 901: display panel 902: shell 903: Optical components 904: install the upper part 905: camera 906: display area 911: lens 912: reflector 913: reflective surface 915: light 916: transmitted light 950: electronic device 951: display panel 952: shell 954: install the upper part 955: Cushion member 956: lens 957: Input terminal 958: output terminal 6500: electronic device 6501: shell 6502: Display 6503: Power button 6504: Button 6505: speaker 6506: Microphone 6507: Camera 6508: light source 6510: Protective member 6511: display panel 6512: Optical components 6513: Touch sensor panel 6515: FPC 6516: IC 6517: printed circuit board 6518: battery 7000: Display 7100: TV 7101: Shell 7103: Bracket 7111: remote control 7200: Notebook PC 7211: Shell 7212: keyboard 7213: pointing device 7214: External port 7300: digital signage 7301: Shell 7303: Speaker 7311: Information Terminal Equipment 7400: digital signage 7401: pillar 7411: Information Terminal Equipment 9000: Shell 9001: Display Department 9003: Speaker 9005: Operation key 9006: Connection terminal 9007: Sensor 9008: Microphone 9050: icon 9051: Information 9052: Information 9053: Information 9054: Information 9055: Hinge 9101: Portable Information Terminal 9102: Portable Information Terminal 9200: portable information terminal 9201: Portable Information Terminal

In the schema: 1A to 1D are plan views showing an example of a display device; 2A is a cross-sectional view showing an example of a display device, FIG. 2B is a cross-sectional view showing an example of an LED package, and FIG. 2C is a cross-sectional view showing an example of an LED chip; 3A is a cross-sectional view showing an example of a display device, FIGS. 3B and 3D are cross-sectional views showing an example of an LED package, and FIG. 3C is a cross-sectional view showing an example of an LED chip; Figure 4 is a cross-sectional view showing an example of a display device; FIG. 5 is a cross-sectional view showing an example of a display device; FIG. 6 is a cross-sectional view showing an example of a display device; FIG. 7 is a circuit diagram showing an example of pixels of a display device; 8A and 8B are diagrams showing an example of an electronic device; 9A and 9B are diagrams showing an example of an electronic device; 10A and 10B are diagrams showing an example of an electronic device; 11A to 11D are diagrams showing examples of electronic devices; 12A to 12F are diagrams showing examples of electronic devices; Fig. 13 is a display photograph of the display device of the embodiment.

100: display device

108: Wiring

110: Display

130: pixels

Claims (15)

A display device includes: Pixels, Wherein, the pixel includes a first transistor, a second transistor, a first conductive layer and a light emitting diode package, The light emitting diode package includes a first light emitting diode, a second light emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer, The first light emitting diode includes a first electrode and a second electrode, The second light emitting diode includes a third electrode and a fourth electrode, One of the source and drain of the first transistor is electrically connected to the first electrode through the second conductive layer, One of the source and drain of the second transistor is electrically connected to the third electrode through the third conductive layer, The first conductive layer is electrically connected to the second electrode through the fourth conductive layer, The first conductive layer is electrically connected to the fourth electrode through the fourth conductive layer, And, the first conductive layer is supplied with a fixed potential. According to the display device in item 1 of the scope of patent application, The first light-emitting diode and the second light-emitting diode are both small light-emitting diodes. According to the display device in item 1 of the scope of patent application, The first light-emitting diode and the second light-emitting diode are both miniature light-emitting diodes. According to the display device of any one of the 1st to 3rd scope of the patent application, The first light-emitting diode and the second light-emitting diode present different colors of light. According to the display device in any one of the scope of patent application from 1 to 4, Wherein, the first transistor and the second transistor both include metal oxide in the channel formation region. A display device includes: Pixels, Wherein, the pixel includes a first transistor, a second transistor, a third transistor, a first conductive layer and a light emitting diode package, The light emitting diode package includes a first light emitting diode, a second light emitting diode, a third light emitting diode, a second conductive layer, a third conductive layer, a fourth conductive layer, and a fifth conductive layer, The first light emitting diode includes a first electrode and a second electrode, The second light emitting diode includes a third electrode and a fourth electrode, The third light-emitting diode includes a fifth electrode and a sixth electrode, One of the source and drain of the first transistor is electrically connected to the first electrode through the second conductive layer, One of the source and drain of the second transistor is electrically connected to the third electrode through the third conductive layer, One of the source and drain of the third transistor is electrically connected to the fifth electrode through the fifth conductive layer, The first conductive layer is electrically connected to the second electrode through the fourth conductive layer, The first conductive layer is electrically connected to the fourth electrode through the fourth conductive layer, The first conductive layer is electrically connected to the sixth electrode through the fourth conductive layer, And, the first conductive layer is supplied with a fixed potential. According to the display device of item 6 of the scope of patent application, Wherein the first light emitting diode, the second light emitting diode and the third light emitting diode are all small light emitting diodes. According to the display device of item 6 of the scope of patent application, The first light-emitting diode, the second light-emitting diode and the third light-emitting diode are all miniature light-emitting diodes. According to the display device of any one of the 6th to 8th patents, The first light emitting diode presents red light, the second light emitting diode presents green light, and the third light emitting diode presents blue light. According to the display device of any one of the 6th to 9th patent applications, The first transistor, the second transistor, and the third transistor all include metal oxide in the channel forming region. According to the display device in any one of the scope of patent application from 1 to 10, The fourth conductive layer and the second electrode are electrically connected to each other by a first lead, And the fourth conductive layer and the fourth electrode are electrically connected to each other through a second lead. According to the display device in any one of the scope of patent application from 1 to 11, The second conductive layer and the first electrode are in contact with each other. According to the display device in any one of the scope of patent application from 1 to 12, The third conductive layer and the third electrode are electrically connected to each other through a third lead. A display module includes: The display device of any one of the scope of patent application from 1 to 13; and Connector or integrated circuit. An electronic device, including: The display module of item 14 in the scope of patent application; and At least one of antenna, battery, case, camera, speaker, microphone, and operation button.

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