TW202021675A - Substrate treatment method and substrate treatment apparatus - Google Patents

Substrate treatment method and substrate treatment apparatus Download PDF

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TW202021675A
TW202021675A TW108135169A TW108135169A TW202021675A TW 202021675 A TW202021675 A TW 202021675A TW 108135169 A TW108135169 A TW 108135169A TW 108135169 A TW108135169 A TW 108135169A TW 202021675 A TW202021675 A TW 202021675A
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substrate
processing
camera
image
nozzle
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TWI727438B (en
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猶原英司
沖田有史
角間央章
増井達哉
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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Abstract

Provided is a substrate processing method which makes it possible to visually monitor the location which is hit by a liquid column of processing fluid which is discharged onto the end section of a substrate. The substrate processing method is equipped with a holding step, a rotation step, a raising step, a bevel treatment step, an imaging step and a monitoring step. The holding step involves holding the substrate using a substrate-holding part. The rotation step involves rotating the substrate by rotating the substrate-holding part. The raising step involves raising a cup member which surrounds the outer circumference of the substrate-holding part, and positioning the upper end of the cup member at an upper end position which is higher than the upper surface of the substrate. The bevel treatment step discharges a treatment fluid onto the end section of the upper surface of the substrate from the discharge port of the nozzle, which is positioned lower than the upper end position. The imaging step involves obtaining a captured image, by imaging with a camera, of an imaging region which is seen from an imaging position above the substrate and includes the processing fluid discharged from the nozzle and a mirror image of the discharge fluid reflected on the upper surface of the substrate. The monitoring step involves visually monitoring the location which is hit by the treatment fluid on the basis of the mirror image and the treatment fluid in the captured image.

Description

基板處理方法以及基板處理裝置Substrate processing method and substrate processing device

本發明係有關於一種基板處理方法以及基板處理裝置。The invention relates to a substrate processing method and a substrate processing device.

使用基板處理裝置作為用以對基板進行處理之裝置，該基板處理裝置係一邊使基板在水平面內旋轉一邊從噴出噴嘴對基板的表面噴出處理液。已從噴出噴嘴著液至基板的略中央之處理液係藉由伴隨著基板的旋轉之離心力擴展至基板的整面並從基板的周緣朝外側飛散。藉由處理液擴展至基板的整面，能使處理液作用至基板的整面。採用已與針對基板的處理相應之藥液或者洗淨液等作為處理液。A substrate processing apparatus is used as an apparatus for processing a substrate, and the substrate processing apparatus ejects a processing liquid from an ejection nozzle to the surface of the substrate while rotating the substrate in a horizontal plane. The processing liquid that has been sprayed from the ejection nozzle to approximately the center of the substrate spreads to the entire surface of the substrate by centrifugal force accompanying the rotation of the substrate, and is scattered outward from the periphery of the substrate. By spreading the processing liquid to the entire surface of the substrate, the processing liquid can be applied to the entire surface of the substrate. As the processing liquid, a chemical liquid or a cleaning liquid that has been adapted to the processing of the substrate is used.

在此種基板處理裝置中，已提案有一種技術(專利文獻1至專利文獻5)，係設置有照相機以監視處理液是否適當地噴出。In such a substrate processing apparatus, a technique (Patent Document 1 to Patent Document 5) has been proposed in which a camera is installed to monitor whether the processing liquid is properly discharged.

此外，在半導體基板的製造工序中，會有殘留在基板的周緣端部上的各種膜對基板的器件(device)面造成不良影響之問題。In addition, in the manufacturing process of the semiconductor substrate, there is a problem that various films remaining on the peripheral edge of the substrate adversely affect the device surface of the substrate.

因此，以往提案有一種斜面(bevel)處理，係用以從基板的周緣端部去除該膜。在斜面處理中，一邊使基板在水平面內旋轉一邊從噴出噴嘴朝基板的端部噴出去除用的處理液，藉由該處理液去除基板的周緣端部的膜。 [先前技術文獻] [專利文獻]Therefore, a bevel treatment has been proposed in the past to remove the film from the peripheral edge of the substrate. In the bevel processing, a removal treatment liquid is sprayed from a spray nozzle toward the end of the substrate while rotating the substrate in a horizontal plane, and the film on the peripheral end of the substrate is removed by the treatment liquid. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2015-173148號公報。 [專利文獻2]日本特開2017-29883號公報。 [專利文獻3]日本特開2015-18848號公報。 [專利文獻4]日本特開2016-122681號公報。 [專利文獻5]日本特開2008-135679號公報。[Patent Document 1] JP 2015-173148 A. [Patent Document 2] JP 2017-29883 A. [Patent Document 3] JP 2015-18848 A. [Patent Document 4] JP 2016-122681 A. [Patent Document 5] JP 2008-135679 A.

[發明所欲解決之課題][Problems to be solved by the invention]

在斜面處理中，由於只要對基板的端部供給處理液即可，因此處理液的流量變少。亦即，已從噴出噴嘴噴出的液柱狀的處理液係變細。因此，該液柱狀的處理液係容易受到伴隨著基板的旋轉之氣流以及周圍所產生的靜電等各種因素的影響，且該液柱狀的處理液的噴出狀態係容易變動。具體而言，可能會因為各種因素導致處理液相對於基板的著液位置偏移。由於著液位置的偏移會對製程造成不良影響，因此希望能監視處理液的噴出狀態。In the bevel processing, since only the processing liquid needs to be supplied to the end of the substrate, the flow rate of the processing liquid is reduced. That is, the liquid columnar processing liquid system ejected from the ejection nozzle becomes thinner. Therefore, the liquid columnar processing liquid system is easily affected by various factors such as the air flow accompanying the rotation of the substrate and the static electricity generated around it, and the ejection state of the liquid columnar processing liquid is easily changed. Specifically, various factors may cause the imposition position of the processing liquid phase to shift to the substrate. Since the deviation of the landing position will have an adverse effect on the manufacturing process, it is desirable to be able to monitor the discharge state of the treatment liquid.

然而，在斜面處理中，由於噴出噴嘴與基板之間的間隔狹窄，因此為了拍攝已從噴出噴嘴噴出的液柱狀的處理液需要耗費工夫。However, in the slope processing, since the interval between the ejection nozzle and the substrate is narrow, it takes time and effort to photograph the liquid columnar processing liquid ejected from the ejection nozzle.

因此，本發明的目的係提供一種能監視已噴出至基板的端部之液柱狀的處理液的著液位置之基板處理方法以及基板處理裝置。 [用以解決課題的手段]Therefore, the object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of monitoring the impingement position of the liquid columnar processing liquid sprayed to the end of the substrate. [Means to solve the problem]

第一態樣的基板處理方法係具備有：保持工序，係使基板保持部保持基板；旋轉工序，係使前述基板保持部旋轉並使前述基板旋轉；上升工序，係使用以圍繞前述基板保持部的外周之罩構件上升，並使前述罩構件的上端位於比前述基板保持部保持的前述基板的上表面還高的上端位置；斜面處理工序，係從位於比前述上端位置還低的位置之噴嘴的噴出口朝被前述基板保持部保持的前述基板的上表面的端部噴出處理液；拍攝工序，係使照相機拍攝從被前述基板保持部保持的前述基板的上方的拍攝位置觀看的拍攝區域並取得拍攝影像，前述拍攝區域係包含有已從前述噴嘴的前述噴出口噴出的處理液以及映照至前述基板的上表面之前述噴出液的鏡像；以及監視工序，係依據前述拍攝影像中的前述處理液與前述鏡像監視前述處理液的著液位置。The substrate processing method of the first aspect is provided with: a holding step for holding the substrate by the substrate holding portion; a rotating step for rotating the substrate holding portion and rotating the substrate; and a raising step for surrounding the substrate holding portion The outer periphery of the cover member is raised, and the upper end of the cover member is positioned at an upper end position higher than the upper surface of the substrate held by the substrate holding portion; the bevel treatment process starts with a nozzle located at a position lower than the upper end position The ejection port ejects the processing liquid toward the end of the upper surface of the substrate held by the substrate holder; the imaging step is to make the camera photograph the imaging area viewed from the imaging position above the substrate held by the substrate holder and To obtain a photographed image, the photographing area includes the processing liquid ejected from the ejection port of the nozzle and the mirror image of the ejected liquid reflected on the upper surface of the substrate; and the monitoring process is based on the processing in the photographed image The liquid and the aforementioned mirror image monitor the impregnation position of the aforementioned treatment liquid.

第二態樣的基板處理方法係如第一態樣所記載之基板處理方法，其中在前述拍攝影像中，包含有前述處理液以及前述鏡像之整體影像係在前述處理液與前述鏡像之間的交界中彎曲；在前述監視工序中，依據前述處理液的前述整體影像的彎曲位置求出前述著液位置。The substrate processing method of the second aspect is the substrate processing method described in the first aspect, wherein in the aforementioned captured image, the overall image including the processing liquid and the mirror image is between the processing liquid and the mirror image The boundary is bent; in the monitoring step, the impingement position is obtained based on the bending position of the overall image of the treatment liquid.

第三態樣的基板處理方法係如第二態樣所記載之基板處理方法，其中在前述監視工序中，從對前述拍攝影像進行了邊緣檢測處理以及二值化處理所獲得的二值化影像檢測沿著前述處理液的噴出方向延伸的第一直線成分以及沿著前述鏡像的噴出方向延伸的第二直線成分，並求出前述第一直線成分與前述第二直線成分之間的交點作為前述彎曲位置。The substrate processing method of the third aspect is the substrate processing method described in the second aspect, wherein in the foregoing monitoring step, a binarized image obtained by performing edge detection processing and binarization processing on the captured image The first linear component extending along the ejection direction of the processing liquid and the second linear component extending along the ejection direction of the mirror image are detected, and the intersection between the first linear component and the second linear component is obtained as the bending position .

第四態樣的基板處理方法係如第一態樣至第三態樣中任一態樣所記載之基板處理方法，其中前述照相機的曝光時間係設定成基板旋轉一圈所需的時間以上。The substrate processing method of the fourth aspect is the substrate processing method described in any one of the first aspect to the third aspect, wherein the exposure time of the aforementioned camera is set to be longer than the time required for one rotation of the substrate.

第五態樣的基板處理方法係如第一態樣至第三態樣中任一態樣所記載之基板處理方法，其中依據將在基板旋轉一圈所需的時間以上的時間內藉由照相機所取得的複數個拍攝影像予以積分或者平均所獲得的拍攝影像中的前述整體影像求出前述著液位置。The substrate processing method of the fifth aspect is the substrate processing method described in any one of the first aspect to the third aspect, wherein the basis is that the camera is used for a time longer than the time required for the substrate to rotate one revolution The acquired plural captured images are integrated or averaged among the acquired captured images to obtain the aforementioned impregnation position.

第六態樣的基板處理方法係如第一態樣至第五態樣中任一態樣所記載之基板處理方法，其中在前述監視工序中，特定前述拍攝影像中的前述基板的周緣的位置，並求出已將前述基板的周緣的位置作為基準的前述處理液的前述著液位置。The substrate processing method of the sixth aspect is the substrate processing method described in any one of the first aspect to the fifth aspect, wherein in the monitoring step, the position of the peripheral edge of the substrate in the captured image is specified , And obtain the impingement position of the processing liquid on the basis of the position of the peripheral edge of the substrate.

第七態樣的基板處理方法係如第一態樣至第六態樣中任一態樣所記載之基板處理方法，其中前述監視工序係包含有下述工序：在所求出的前述著液位置不在預定的範圍內時，使通報部通報此種狀況。The substrate processing method of the seventh aspect is the substrate processing method described in any one of the first aspect to the sixth aspect, wherein the monitoring process includes the following process: When the location is not within the predetermined range, the notification department shall notify the situation.

第八態樣的基板處理方法係如第一態樣至第七態樣中任一態樣所記載之基板處理方法，其中在前述監視工序中，藉由機械學習完畢的分類器將前述拍攝影像分類成著液位置無異常的範疇(category)以及著液位置有異常的範疇中的任一個範疇。The substrate processing method of the eighth aspect is the substrate processing method described in any one of the first aspect to the seventh aspect, wherein in the aforementioned monitoring process, the aforementioned captured image is captured by a machine-learned classifier It is classified into either a category where there is no abnormality in the implantation position and a category where there is an abnormality in the implantation position.

第九態樣的基板處理方法係如第八態樣所記載之基板處理方法，其中在前述監視工序中，從前述拍攝影像切出位於前述噴嘴的正下方且包含有前述處理液以及前述鏡像之區域，並將所切出的區域的影像輸入至前述分類器。The substrate processing method of the ninth aspect is the substrate processing method described in the eighth aspect, wherein, in the monitoring step, the photographed image is cut out from the photographed image, which is located directly under the nozzle and contains the processing liquid and the mirror image. Region, and input the image of the cut out region to the aforementioned classifier.

第十態樣的基板處理裝置係具備有：基板保持部，係保持基板並使前述基板旋轉；罩構件，係圍繞前述基板保持部的外周；升降機構，係使前述罩構件上升，並使前述罩構件的上端位於比被前述基板保持部保持的前述基板的上表面還高的上端位置；噴嘴，係具有位於比前述上端位置還低的位置之噴出口，並從前述噴出口朝被前述基板保持部保持的前述基板的上表面的端部噴出處理液；照相機，係拍攝從被前述基板保持部保持的前述基板的上方的拍攝位置觀看的拍攝區域並取得拍攝影像，前述拍攝區域係包含有已從前述噴嘴的前述噴出口噴出的處理液以及映照至前述基板的上表面之前述噴出液的鏡像；以及影像處理部，係依據前述拍攝影像中的前述處理液與前述鏡像監視前述處理液的著液位置。 [發明功效]The substrate processing apparatus of the tenth aspect is provided with: a substrate holding portion that holds the substrate and rotates the substrate; a cover member that surrounds the outer periphery of the substrate holding portion; and a lifting mechanism that raises the cover member and causes the The upper end of the cover member is located at an upper end position higher than the upper surface of the substrate held by the substrate holding portion; the nozzle has an ejection port located lower than the upper end position, and is directed from the ejection port toward the substrate The end portion of the upper surface of the substrate held by the holding portion ejects the processing liquid; the camera captures a photographing area viewed from a photographing position above the substrate held by the substrate holding portion to obtain a photographed image, and the photographing area includes The processing liquid that has been ejected from the ejection port of the nozzle and the mirror image of the ejection liquid reflected on the upper surface of the substrate; and the image processing unit monitors the processing liquid based on the processing liquid and the mirror image in the captured image Implantation position. [Effect of invention]

依據第一態樣的基板處理方法以及第十態樣的基板處理裝置，能監視已噴出至基板的端部之液柱狀的處理液的著液位置。According to the substrate processing method of the first aspect and the substrate processing apparatus of the tenth aspect, it is possible to monitor the impingement position of the liquid columnar processing liquid sprayed to the end of the substrate.

依據第二態樣的基板處理方法，由於彎曲位置位於基板W的上表面上，因此能以更高的精度求出著液位置。According to the substrate processing method of the second aspect, since the bending position is located on the upper surface of the substrate W, the landing position can be obtained with higher accuracy.

依據第三態樣的基板處理方法，能適當地求出彎曲位置。According to the substrate processing method of the third aspect, the bending position can be appropriately determined.

依據第四態樣的基板處理方法，由於基板的上表面的圖案(pattern)被平均化且被同樣化，因此能在拍攝影像中降低處理液的鏡像所含有的雜訊。According to the substrate processing method of the fourth aspect, since the pattern on the upper surface of the substrate is averaged and equalized, the noise contained in the mirror image of the processing liquid can be reduced in the captured image.

依據第五態樣的基板處理方法，由於基板的上表面的圖案被平均化且被同樣化，因此能在拍攝影像中降低處理液的鏡像所含有的雜訊。According to the substrate processing method of the fifth aspect, since the pattern on the upper surface of the substrate is averaged and homogenized, the noise contained in the mirror image of the processing liquid can be reduced in the captured image.

依據第六態樣的基板處理方法，由於求出相對於基板的周緣的著液位置，因此能更適當地監視著液位置。According to the substrate processing method of the sixth aspect, since the impingement position with respect to the periphery of the substrate is obtained, the impingement position can be monitored more appropriately.

依據第七態樣的基板處理方法，作業者能辨識著液位置異常。According to the substrate processing method of the seventh aspect, the operator can recognize that the liquid position is abnormal.

依據第八態樣的基板處理方法，能高精度地檢測異常。According to the substrate processing method of the eighth aspect, an abnormality can be detected with high precision.

依據第九態樣的基板處理方法，由於能去除與處理液關聯性低的區域的影響並進行分類，因此能提升分類精度。According to the substrate processing method of the ninth aspect, since it is possible to remove the influence of regions with low relevance to the processing liquid and perform classification, the classification accuracy can be improved.

以下，參照隨附的圖式說明實施形態。此外，圖式係概略性顯示，為了方便說明而適當地省略構成或者將構成簡略化。此外，圖式所示的構成等大小以及位置的相互關係並未正確地記載，可適當地變更。Hereinafter, the embodiment will be described with reference to the accompanying drawings. In addition, the drawings are shown schematically, and the configuration is appropriately omitted or simplified for convenience of description. In addition, the relationship between the sizes and positions of the structure and the like shown in the drawings is not described correctly, and can be changed as appropriate.

此外，在以下所述的說明中，於相同構成要素附上相同的元件符號，針對這些名稱與功能亦同樣。因此，為了避免重複會有省略針對這些構成要素的詳細說明之情形。In addition, in the description below, the same reference numerals are attached to the same components, and the names and functions are the same. Therefore, in order to avoid repetition, a detailed description of these components may be omitted.

[基板處理裝置的概要] 圖1係顯示基板處理裝置100的整體構成之圖。基板處理裝置100係用以對基板W供給處理液並對基板W進行處理之裝置。基板W係例如為半導體基板。基板W係具有略圓板形狀。[Overview of substrate processing equipment] FIG. 1 is a diagram showing the overall configuration of a substrate processing apparatus 100. The substrate processing apparatus 100 is an apparatus for supplying a processing liquid to a substrate W and processing the substrate W. The substrate W is, for example, a semiconductor substrate. The substrate W has a substantially circular plate shape.

基板處理裝置100係一邊使基板W在水平面內旋轉一邊對基板W的端部供給處理液，藉此能去除附著至基板W的周緣端部的不要物質。基板W的周緣端部的寬度(沿著徑方向的寬度)係例如為0.5mm至3mm左右。作為不要物質，例如可列舉SiO2 膜、SiN膜及多晶矽(polysilicon)膜等膜以及微粒(particle)等。作為用以去除此種不要物質之處理液，能列舉氫氟酸(HF)、磷酸(H3 PO4 )、氨(NH3 )與過氧化氫(H2 O2 )的混合溶液(SC-1(Standard clean-1；第一標準清洗液，亦即氨水過氧化氫混和液(ammonia-hydrogen peroxide))、以及氫氟硝酸(氫氟酸與硝酸(HNO3 )的混合液)等。基板處理裝置100係一邊使基板W旋轉一邊對基板W的端部供給處理液，藉此去除不要物質。此種處理亦稱為斜面處理。The substrate processing apparatus 100 supplies the processing liquid to the end of the substrate W while rotating the substrate W in a horizontal plane, whereby unnecessary substances adhering to the peripheral end of the substrate W can be removed. The width (width along the radial direction) of the peripheral edge of the substrate W is, for example, about 0.5 mm to 3 mm. Examples of unnecessary substances include films such as SiO 2 films, SiN films, and polysilicon films, particles, and the like. As a treatment solution for removing such unnecessary substances, a mixed solution of hydrofluoric acid (HF), phosphoric acid (H 3 PO 4 ), ammonia (NH 3 ) and hydrogen peroxide (H 2 O 2 ) (SC- 1 (Standard clean-1; the first standard cleaning solution, that is, ammonia-hydrogen peroxide), and hydrofluoronitric acid (a mixture of hydrofluoric acid and nitric acid (HNO 3 )), etc. Substrate The processing apparatus 100 supplies a processing liquid to the end of the substrate W while rotating the substrate W, thereby removing unnecessary substances. This processing is also called bevel processing.

基板處理裝置100係具備有索引器(indexer)102、複數個處理單元1、以及主搬運機器人103。索引器102係具有下述功能：將從裝置外部接取之未處理的基板W搬入至裝置內部，並將處理完畢的基板W搬出至裝置外部。索引器102係用以載置複述個承載器(carrier)(未圖示)，並具備有移送機器人(未圖示)。作為承載器，能採用用以將基板W收容於密閉空間之FOUP(front opening unified pod；前開式晶圓傳送盒)或SMIF(standard mechanical inter face；標準製造介面)盒、或者用以在已收容的狀態下將基板W曝露於外氣之OC(open cassette；開放式晶圓匣)。移送機器人係在承載器與主搬運機器人103之間移送基板W。The substrate processing apparatus 100 includes an indexer 102, a plurality of processing units 1, and a main transfer robot 103. The indexer 102 has the function of carrying in the unprocessed substrate W taken from the outside of the device into the inside of the device, and carrying out the processed substrate W to the outside of the device. The indexer 102 is used to place a repeating carrier (not shown), and is provided with a transfer robot (not shown). As the carrier, a FOUP (front opening unified pod) or SMIF (standard mechanical inter face) box used to house the substrate W in a confined space can be used, or it can be used to store the substrate W in an enclosed space. The substrate W is exposed to the OC (open cassette; open cassette) of the outside air in the state of the above. The transfer robot is to transfer the substrate W between the carrier and the main transfer robot 103.

於基板處理裝置100配置有十二個處理單元1。詳細的配置構成係以圍繞主搬運機器人103的周圍之方式配置有四個塔，該塔係層疊有三個處理單元1。換言之，三段地層疊有以圍繞主搬運機器人103之方式配置的四個處理單元1，且圖1係顯示其中的一層。此外，搭載於基板處理裝置100之處理單元1的個數並未限定於十二個，例如亦可為八個或者四個。Twelve processing units 1 are arranged in the substrate processing apparatus 100. The detailed configuration is that four towers are arranged so as to surround the circumference of the main transport robot 103, and three processing units 1 are stacked on the tower. In other words, four processing units 1 arranged to surround the main transport robot 103 are stacked in three stages, and FIG. 1 shows one layer of them. In addition, the number of processing units 1 mounted on the substrate processing apparatus 100 is not limited to twelve, and may be eight or four, for example.

主搬運機器人103係配置於層疊有處理單元1之四個塔的中央。主搬運機器人103係將從索引器102接取之未處理的基板W搬入至各個處理單元1，並從各個處理單元1搬出處理完畢的基板W且傳遞至索引器102。The main transport robot 103 is arranged in the center of the four towers on which the processing units 1 are stacked. The main transport robot 103 carries in the unprocessed substrate W received from the indexer 102 to each processing unit 1, and unloads the processed substrate W from each processing unit 1 to the indexer 102.

[處理單元] 接著，說明處理單元1。以下，雖然說明搭載於基板處理裝置100之十二個處理單元1中的一個處理單元1，但針對其他的處理單元1亦同樣。圖2係處理單元1的俯視圖。此外，圖3係處理單元1的縱剖視圖。[Processing Unit] Next, the processing unit 1 will be described. Hereinafter, although one processing unit 1 among the twelve processing units 1 mounted in the substrate processing apparatus 100 is described, the same applies to the other processing units 1. FIG. 2 is a top view of the processing unit 1. In addition, FIG. 3 is a longitudinal sectional view of the processing unit 1.

處理單元1係於腔室(chamber)10內具備有下述構件作為主要的要素：基板保持部20，係將基板W保持成水平姿勢(基板W的法線沿著鉛直方向之姿勢)；三個處理液供給部30、60、65，係用以對被基板保持部20保持的基板W的上表面供給處理液；處理罩(processing cup)(罩構件)40，係圍繞基板保持部20的周圍；以及照相機70。此外，於腔室10內的處理罩40的周圍設置有區隔板15，該區隔板15係用以將腔室10的內側空間上下地區隔。此外，於處理單元1設置有控制部9以及通報部93。The processing unit 1 is equipped with the following components as main elements in a chamber 10: a substrate holding portion 20 that holds the substrate W in a horizontal posture (posture where the normal line of the substrate W is along the vertical direction); The processing liquid supply parts 30, 60, 65 are used to supply the processing liquid to the upper surface of the substrate W held by the substrate holding part 20; the processing cup (cover member) 40 surrounds the substrate holding part 20 Around; and camera 70. In addition, a partition 15 is provided around the processing cover 40 in the chamber 10, and the partition 15 is used to partition the inner space of the chamber 10 up and down. In addition, the processing unit 1 is provided with a control unit 9 and a notification unit 93.

[腔室] 腔室10係具備有：側壁11，係沿著鉛直方向；頂壁12，係封閉被側壁11圍繞的空間的上側；以及底壁13，係封閉被側壁11圍繞的空間的下側。被側壁11、頂壁12以及底壁13圍繞的空間係成為基板W的處理空間。此外，於腔室10的側壁11的一部分設置有：搬入搬出口(未圖示)，係藉由主搬運機器人103將基板W相對於腔室10搬入以及搬出；以及擋門(shutter)(未圖示)，係將搬入搬出口予以開閉。[Chamber] The chamber 10 is provided with a side wall 11 which is along the vertical direction; a top wall 12 which closes the upper side of the space surrounded by the side wall 11; and a bottom wall 13 which closes the lower side of the space surrounded by the side wall 11. The space surrounded by the side wall 11, the top wall 12, and the bottom wall 13 becomes a processing space of the substrate W. In addition, a part of the side wall 11 of the chamber 10 is provided with a loading/unloading port (not shown) for loading and unloading the substrate W with respect to the chamber 10 by the main transfer robot 103; and a shutter (not shown) As shown), it is to open and close the loading and unloading exit.

於腔室10的頂壁12安裝有風扇過濾器單元(FFU；fan filter unit)14，風扇過濾器單元14係用以將設置有基板處理裝置100的無塵室(cleaning room)內的空氣進一步地清淨化並供給至腔室10內的處理空間。風扇過濾器單元14係具備有用以將無塵室內的空氣取入並輸送至腔室10內之風扇以及過濾器(例如HEPA(High Efficiency Particulate Air；高效率粒子空氣)過濾器)，並於腔室10內的處理空間形成清淨空氣的降流(down flow)。為了將從風扇過濾器單元14所供給的清淨空氣均勻地分散，亦可於頂壁12的正下方設置穿設有多個吹出孔的衝孔板(punching plate)。A fan filter unit (FFU; fan filter unit) 14 is installed on the top wall 12 of the chamber 10, and the fan filter unit 14 is used to further remove the air in the cleaning room where the substrate processing apparatus 100 is installed. The ground cleaning is purified and supplied to the processing space in the chamber 10. The fan filter unit 14 is equipped with a fan and a filter (such as a HEPA (High Efficiency Particulate Air) filter) for taking the air in the clean room into the chamber 10 and sending it to the chamber 10. The processing space in the chamber 10 forms a down flow of clean air. In order to uniformly disperse the clean air supplied from the fan filter unit 14, a punching plate (punching plate) having a plurality of blowout holes may be provided directly under the top wall 12.

[基板保持部] 基板保持部20係例如為自轉夾具(spin chuck)。基板保持部20係具備有圓板形狀的自轉基座(spin base)21，自轉基座21係以水平姿勢固定於沿著鉛直方向延伸的旋轉軸24的上端。於自轉基座21的下方設置有用以使旋轉軸24旋轉之自轉馬達(spin motor)22。自轉馬達22係經由旋轉軸24使自轉基座21於水平面內旋轉。此外，以圍繞自轉馬達22以及旋轉軸24的周圍之方式設置有筒狀的蓋(cover)構件23。[Substrate holding part] The substrate holding portion 20 is, for example, a spin chuck. The substrate holding portion 20 is provided with a spin base 21 in the shape of a disc, and the spin base 21 is fixed in a horizontal posture to the upper end of a rotating shaft 24 extending in the vertical direction. A spin motor 22 for rotating the rotation shaft 24 is provided under the rotation base 21. The rotation motor 22 rotates the rotation base 21 in a horizontal plane via the rotation shaft 24. In addition, a cylindrical cover member 23 is provided so as to surround the circumference of the rotation motor 22 and the rotation shaft 24.

圓板形狀的自轉基座21的外徑係比被基板保持部20保持的圓形的基板W的直徑還稍大。因此，自轉基座21係具有與應保持的基板W的下表面整面對向之保持面21a。The outer diameter of the disk-shaped spin base 21 is slightly larger than the diameter of the circular substrate W held by the substrate holding portion 20. Therefore, the rotation base 21 has a holding surface 21a facing the entire lower surface of the substrate W to be held.

於自轉基座21的保持面21a的周緣部立設有複數個(在本實施形態中為四個)夾具銷(chuck pin)26。複數個夾具銷26係沿著與圓形的基板W的外周圓對應之圓周上隔著均等的間隔(若如本實施形態般為四個夾具銷26時則為90°間隔)配置。複數個夾具銷26係藉由收容於自轉基座21內且未圖示的連桿(link)機構而被連動地驅動。基板保持部20係使複數個夾具銷26各者抵接至基板W的外周端並把持基板W，藉此能在自轉基座21的上方以接近保持面21a的水平姿勢保持該基板W(參照圖3)，並能使複數個夾具銷26各者從基板W的外周端離開並解除把持。A plurality of (four in this embodiment) chuck pins 26 are erected on the peripheral edge of the holding surface 21a of the rotation base 21. The plural jig pins 26 are arranged along the circumference corresponding to the outer circumference of the circular substrate W at equal intervals (in the case of four jig pins 26 as in this embodiment, 90° intervals). The plurality of clamp pins 26 are interlocked and driven by a link mechanism (not shown) that is housed in the rotation base 21. The substrate holding portion 20 allows each of the plurality of clamp pins 26 to abut against the outer peripheral end of the substrate W and hold the substrate W, whereby the substrate W can be held above the rotation base 21 in a horizontal posture close to the holding surface 21a (see 3), and each of the plurality of clamp pins 26 can be separated from the outer peripheral end of the substrate W and the grip can be released.

在基板保持部20藉由複數個夾具銷26所為的把持而保持基板W的狀態下，自轉馬達22使旋轉軸24旋轉，藉此能使基板W繞著沿著通過基板W的中心的鉛直方向之旋轉軸CX旋轉。在此，基板保持部20係在圖2中朝逆時鐘方向旋轉。In a state where the substrate holding portion 20 holds the substrate W by the gripping of a plurality of clamp pins 26, the rotation motor 22 rotates the rotation shaft 24, thereby enabling the substrate W to travel along the vertical direction passing through the center of the substrate W The rotation axis CX rotates. Here, the substrate holding portion 20 is rotated in the counterclockwise direction in FIG. 2.

[處理液供給部] 處理液供給部30係具備有噴出噴嘴31、固定構件32以及移動機構33。固定構件32係用以固定噴出噴嘴31之構件，並例如具備有噴嘴臂321以及噴嘴基台322。於噴嘴臂321的前端安裝有噴出噴嘴31。噴嘴臂321的基端側係固定並連結至噴嘴基台322。移動機構33係使固定構件32移位，藉此使噴出噴嘴31移動。例如，移動機構33為馬達，用以使噴嘴基台322繞著沿著鉛直方向的軸轉動。藉由噴嘴基台322轉動，如圖2中的箭頭AR34所示般，噴出噴嘴31係在基板W的端部的上方的處理位置與比處理罩40更外側的待機位置之間沿著水平方向圓弧狀地移動。[Processing liquid supply unit] The processing liquid supply unit 30 includes a discharge nozzle 31, a fixing member 32, and a moving mechanism 33. The fixing member 32 is a member for fixing the ejection nozzle 31, and includes, for example, a nozzle arm 321 and a nozzle base 322. A spray nozzle 31 is attached to the tip of the nozzle arm 321. The base end side of the nozzle arm 321 is fixed and connected to the nozzle base 322. The moving mechanism 33 displaces the fixing member 32, thereby moving the ejection nozzle 31. For example, the moving mechanism 33 is a motor for rotating the nozzle base 322 around an axis along the vertical direction. As the nozzle base 322 rotates, as shown by the arrow AR34 in FIG. 2, the ejection nozzle 31 is located in the horizontal direction between the processing position above the end of the substrate W and the standby position outside the processing cover 40 Move in an arc.

處理液供給部30亦可具備有複數個噴出噴嘴31。在圖2以及圖3的例子中顯示三個噴出噴嘴31作為噴出噴嘴31。三個噴出噴嘴31係經由噴嘴臂321固定至噴嘴基台322。因此，三個噴出噴嘴31係彼此同步地移動。三個噴出噴嘴31係設置於處理位置中沿著基板W的周方向排列之位置。三個噴出噴嘴31的周方向中的間隔係例如為十數nm左右。The processing liquid supply unit 30 may include a plurality of ejection nozzles 31. In the examples in FIGS. 2 and 3, three ejection nozzles 31 are shown as the ejection nozzles 31. The three ejection nozzles 31 are fixed to the nozzle base 322 via the nozzle arm 321. Therefore, the three ejection nozzles 31 move in synchronization with each other. The three ejection nozzles 31 are provided at positions aligned along the circumferential direction of the substrate W in the processing position. The interval between the three ejection nozzles 31 in the circumferential direction is, for example, about tens of nm.

如圖3的例示所示，噴出噴嘴31係經由配管34連接至處理液供給源37。於配管34的中途設置有開閉閥35。於噴出噴嘴31的前端的下表面形成有噴出口(未圖示)。開啟開閉閥35，藉此來自處理液供給源37的處理液係於配管34的內部流動並從噴出噴嘴31的噴出口被噴出。在噴出噴嘴31於處理位置停止的狀態下噴出的處理液係著液至被基板保持部20保持的基板W的上表面的端部。基板W旋轉，藉此來自噴出噴嘴31的處理液係被供給至基板W的周緣端部的整個區域並去除該周緣端部的不要物質(斜面處理)。As shown in the example of FIG. 3, the ejection nozzle 31 is connected to a processing liquid supply source 37 via a pipe 34. An on-off valve 35 is provided in the middle of the pipe 34. A discharge port (not shown) is formed on the lower surface of the tip of the discharge nozzle 31. When the on-off valve 35 is opened, the processing liquid from the processing liquid supply source 37 flows through the inside of the pipe 34 and is ejected from the ejection port of the ejection nozzle 31. The processing liquid ejected in the state where the ejection nozzle 31 is stopped at the processing position reaches the end of the upper surface of the substrate W held by the substrate holding portion 20. The substrate W is rotated, whereby the processing liquid system from the ejection nozzle 31 is supplied to the entire area of the peripheral edge of the substrate W, and unnecessary substances at the peripheral edge are removed (bevel processing).

亦可於配管34的中途分別設置有倒吸(suck back)閥36。倒吸閥36係在停止噴出處理液時吸入配管34內的處理液，藉此從噴出噴嘴31的前端引入處理液。藉此，不易在停止噴出時產生處理液從噴出噴嘴31的前端作為較大的團塊(液滴)落下之滴落。A suck back valve 36 may be provided in the middle of the pipe 34, respectively. The reverse suction valve 36 sucks the processing liquid in the pipe 34 when the discharge of the processing liquid is stopped, thereby introducing the processing liquid from the tip of the discharge nozzle 31. Thereby, it is difficult to cause the treatment liquid to drop as large agglomerates (liquid droplets) from the tip of the ejection nozzle 31 when the ejection is stopped.

在設置有複數個噴出噴嘴31之情形中，噴出噴嘴31亦可連接至彼此不同的處理液供給源37。亦即，處理液供給部30亦可構成為供給複數種處理液。或者，複數個噴出噴嘴31的至少兩個噴出噴嘴31亦可供給相同的處理液。In the case where a plurality of ejection nozzles 31 are provided, the ejection nozzles 31 may also be connected to different processing liquid supply sources 37 from each other. That is, the processing liquid supply unit 30 may be configured to supply a plurality of processing liquids. Alternatively, at least two ejection nozzles 31 of a plurality of ejection nozzles 31 may supply the same processing liquid.

此外，於本實施形態的處理單元1除了設置有上面所說明的處理液供給部30之外還進一步設置有兩個處理液供給部60、65。本實施形態的處理液供給部60、65係具備有與上面所說明的處理液供給部30同樣的構成。亦即，處理液供給部60係具備有噴出噴嘴61、固定構件62以及移動機構63。與固定構件32同樣地，固定構件62係具備有噴嘴臂621以及噴嘴基台622。於噴嘴臂621的前端安裝有噴出噴嘴61，於噴嘴臂621的基端連結有噴嘴基台622。移動機構63係例如為馬達，使噴嘴基台622轉動，藉此如箭頭AR64所示般使噴出噴嘴61在基板W的端部的上方的處理位置與比處理罩40還外側的待機位置之間圓弧狀地移動。噴出噴嘴61亦對基板W的端部供給處理液。基板W旋轉，藉此來自噴出噴嘴61的處理液係被供給至基板W的周緣端部的整個區域並去除該周緣端部的不要物質(斜面處理)。In addition, the processing unit 1 of this embodiment is provided with two processing liquid supply units 60 and 65 in addition to the processing liquid supply unit 30 described above. The processing liquid supply units 60 and 65 of this embodiment have the same configuration as the processing liquid supply unit 30 described above. In other words, the processing liquid supply unit 60 includes a discharge nozzle 61, a fixing member 62, and a moving mechanism 63. Like the fixing member 32, the fixing member 62 is provided with a nozzle arm 621 and a nozzle base 622. A spray nozzle 61 is attached to the tip of the nozzle arm 621, and a nozzle base 622 is connected to the base end of the nozzle arm 621. The moving mechanism 63 is, for example, a motor, which rotates the nozzle base 622, thereby positioning the ejection nozzle 61 between the processing position above the end of the substrate W and the standby position outside the processing cover 40 as shown by arrow AR64 Move in an arc. The ejection nozzle 61 also supplies the processing liquid to the end of the substrate W. When the substrate W is rotated, the processing liquid system from the ejection nozzle 61 is supplied to the entire area of the peripheral edge of the substrate W, and unnecessary substances at the peripheral edge are removed (bevel processing).

處理液供給部65係具備有噴出噴嘴66、固定構件67以及移動機構68。固定構件67係具備有噴嘴臂671以及噴嘴基台672。於噴嘴臂671的前端安裝有噴出噴嘴66，於噴嘴臂671的基端連結有噴嘴基台672。移動機構68係例如為馬達，使噴嘴基台672轉動，藉此如箭頭AR69所示般使噴出噴嘴66在基板W的略中央的上方的處理位置與比處理罩40還外側的待機位置之間圓弧狀地移動。噴出噴嘴66亦對基板W的略中央部供給處理液。基板W旋轉，藉此來自噴出噴嘴66的處理液係從基板W的中心擴展並從基板W的周緣朝外側飛散。藉此，能使處理液作用於基板W的上表面的整面。The processing liquid supply unit 65 includes a discharge nozzle 66, a fixing member 67, and a moving mechanism 68. The fixing member 67 includes a nozzle arm 671 and a nozzle base 672. A spray nozzle 66 is attached to the tip of the nozzle arm 671, and a nozzle base 672 is connected to the base end of the nozzle arm 671. The moving mechanism 68 is, for example, a motor, which rotates the nozzle base 672, thereby positioning the ejection nozzle 66 between the processing position substantially above the center of the substrate W and the standby position outside the processing cover 40 as shown by arrow AR69 Move in an arc. The ejection nozzle 66 also supplies the processing liquid to the substantially central portion of the substrate W. As the substrate W rotates, the processing liquid from the ejection nozzle 66 spreads from the center of the substrate W and is scattered from the periphery of the substrate W toward the outside. Thereby, the processing liquid can be applied to the entire upper surface of the substrate W.

處理液供給部60、65各者亦可構成為供給複數種處理液。或者，處理液供給部60、65各者亦可構成為供給單一的處理液。Each of the processing liquid supply units 60 and 65 may be configured to supply a plurality of processing liquids. Alternatively, each of the processing liquid supply units 60 and 65 may be configured to supply a single processing liquid.

處理液供給部60、65係在各者的噴出噴嘴61、66位於處理位置的狀態下對被基板保持部20保持的基板W的上表面噴出處理液。此外，處理液供給部60、65的至少一者亦可為二流體噴嘴，該二流體噴嘴係將純水等洗淨液與經過加壓的氣體混合並生成液滴且將該液滴與氣體的混合流體噴射至基板W。此外，設置於處理單元1的處理液供給部並未限定於三個，只要為一個以上即可。與處理液供給部30同樣地，處理液供給部60、65的各個噴出噴嘴亦可經由配管連接至處理液供給源，且於該配管的中途設置有開閉閥並進一步設置有倒吸閥。以下，代表性地說明使用了處理液供給部30的斜面處理。The processing liquid supply units 60 and 65 eject the processing liquid to the upper surface of the substrate W held by the substrate holding unit 20 in a state where the ejection nozzles 61 and 66 of each are located at the processing position. In addition, at least one of the processing liquid supply units 60 and 65 may also be a two-fluid nozzle that mixes a cleaning liquid such as pure water with a pressurized gas to generate droplets and mix the droplets with the gas. The mixed fluid is sprayed to the substrate W. In addition, the processing liquid supply part provided in the processing unit 1 is not limited to three, and it should just be one or more. As with the processing liquid supply unit 30, the respective ejection nozzles of the processing liquid supply units 60 and 65 may be connected to a processing liquid supply source via a pipe, and an on-off valve and a suction valve are further provided in the middle of the pipe. Hereinafter, the slope treatment using the treatment liquid supply unit 30 will be described representatively.

[處理罩] 處理罩40係以圍繞基板保持部20之方式設置。處理罩40係具備有內罩41、中罩42以及外罩43。內罩41、中罩42以及外罩43係設置成可升降。具體而言，於處理單元1設置有升降機構44，升降機構44係能使內罩41、中罩42以及外罩43個別地升降。升降機構44係例如具備有滾珠螺桿(ball screw)機構。[Processing cover] The processing cover 40 is provided so as to surround the substrate holding portion 20. The processing cover 40 includes an inner cover 41, a middle cover 42, and an outer cover 43. The inner cover 41, the middle cover 42, and the outer cover 43 are set up and down. Specifically, a lifting mechanism 44 is provided in the processing unit 1, and the lifting mechanism 44 can lift the inner cover 41, the middle cover 42, and the outer cover 43 individually. The elevating mechanism 44 is provided with a ball screw mechanism, for example.

在內罩41、中罩42以及外罩43已上升的狀態下，處理罩40的上端(在此為外罩43的上端)係相對於基板W的上表面位於上方。以下，亦將外罩43已上升的狀態的外罩43的上端的高度位置稱為處理罩40的上端位置。處理罩40的上端位置與基板W之間的鉛直方向中的間隔係能設定成例如2mm至十數mm左右。In a state where the inner cover 41, the middle cover 42, and the outer cover 43 have been raised, the upper end of the processing cover 40 (here, the upper end of the outer cover 43) is located above the upper surface of the substrate W. Hereinafter, the height position of the upper end of the outer cover 43 in the state where the outer cover 43 has been raised is also referred to as the upper end position of the processing cover 40. The interval in the vertical direction between the upper end position of the processing cover 40 and the substrate W can be set to, for example, about 2 mm to tens of mm.

在內罩41、中罩42以及外罩43已上升的狀態下，從基板W的周緣飛散的處理液係碰撞到內罩41的內周面並落下。已落下的處理液係被第一回收機構(未圖示)適當地回收。在內罩41已下降且中罩42以及外罩43已上升的狀態下，從基板W的周緣飛散的處理液係碰撞到中罩42的內周面並落下。已落下的處理液係被第二回收機構(未圖示)適當地回收。在內罩41以及中罩42已下降且外罩43已上升的狀態下，從基板W的周緣飛散的處理液係碰撞到外罩43的內周面並落下。已落下的處理液係被第三回收機構(未圖示)適當地回收。藉此，能分別適當地回收不同的處理液。In the state where the inner cover 41, the middle cover 42, and the outer cover 43 have been raised, the processing liquid system scattered from the peripheral edge of the substrate W collides with the inner peripheral surface of the inner cover 41 and falls. The dropped processing liquid system is appropriately recovered by the first recovery mechanism (not shown). In a state where the inner cover 41 has been lowered and the middle cover 42 and the outer cover 43 have been raised, the processing liquid system scattered from the peripheral edge of the substrate W collides with the inner peripheral surface of the middle cover 42 and falls. The dropped processing liquid system is appropriately recovered by the second recovery mechanism (not shown). In a state where the inner cover 41 and the middle cover 42 have been lowered and the outer cover 43 has been raised, the processing liquid system scattered from the peripheral edge of the substrate W collides with the inner peripheral surface of the outer cover 43 and falls. The dropped processing liquid system is appropriately recovered by the third recovery mechanism (not shown). In this way, different treatment liquids can be recovered appropriately.

以下，將外罩43已上升的狀態作為處理罩40已上升的狀態進行說明。亦即，處理罩40已上升的狀態係包含有內罩41、中罩42以及外罩43全部已上升的狀態、僅中罩42以及外罩43已上升的狀態以及僅外罩43已上升的狀態。Hereinafter, the state in which the outer cover 43 has been raised will be described as the state in which the processing cover 40 has been raised. That is, the state in which the processing cover 40 has been raised includes a state in which all the inner cover 41, the middle cover 42 and the outer cover 43 have been raised, a state in which only the middle cover 42 and the outer cover 43 have been raised, and a state in which only the outer cover 43 has been raised.

[區隔板] 區隔板15係設置成在處理罩40的周圍中將腔室10的內側空間上下地區隔。區隔板15係可為用以圍繞處理罩40之一片板狀構件，亦可為接合了複數片板狀構件的區隔板。此外，亦可於區隔板15形成於厚度方向貫通的貫通孔或者切口；在本實施形態中形成有貫通孔(未圖示)，該貫通孔係通過用以支撐處理液供給部30、60、65的噴嘴基台322、622、672之支撐軸。[District partition] The partition 15 is provided to partition the inner space of the chamber 10 up and down in the periphery of the processing cover 40. The partition 15 may be a plate-like member used to surround the processing cover 40, or may be a partition joined with a plurality of plate-like members. In addition, a through hole or notch penetrating in the thickness direction may be formed in the partition plate 15; in this embodiment, a through hole (not shown) is formed, and the through hole is used to support the processing liquid supply parts 30, 60. , 65 nozzle bases 322, 622, 672 support shaft.

區隔板15的外周端係連結至腔室10的側壁11。此外，區隔板15中之用以圍繞處理罩40之端緣部係成為比外罩43的外徑還大的直徑的圓形形狀。因此，區隔板15不會成為外罩43的升降的阻礙。The outer peripheral end of the partition 15 is connected to the side wall 11 of the chamber 10. In addition, the end edge of the partition plate 15 for surrounding the processing cover 40 has a circular shape with a diameter larger than the outer diameter of the outer cover 43. Therefore, the partition 15 does not hinder the lifting of the outer cover 43.

此外，於腔室10的側壁11的一部分且於底壁13的附近設置有排氣導管18。排氣導管18係連通地連接至未圖示的排氣機構。從風扇過濾器單元14所供給且於腔室10內流下的清淨空氣中之通過處理罩40與區隔板15之間的空氣係從排氣導管18排出至裝置外部。In addition, an exhaust duct 18 is provided in a part of the side wall 11 of the chamber 10 and near the bottom wall 13. The exhaust duct 18 is communicatively connected to an exhaust mechanism not shown. The clean air supplied from the fan filter unit 14 and flowing down the chamber 10 passes through the air system between the processing cover 40 and the partition plate 15 and is discharged from the exhaust duct 18 to the outside of the device.

[照相機] 照相機70係設置於腔室10內且設置於比區隔板15還上方。照相機70係例如具備有拍攝元件(例如CCD(charge coupled device；電荷耦合元件))以及光學系統，該光學系統係電子光圈以及透鏡等。照相機70係能拍攝接下來要說明的拍攝區域。亦即，拍攝區域係從上方的拍攝位置觀看基板W之區域，且為包含有從噴出噴嘴31朝基板W流下的處理液Lq1以及映照至基板W的上表面的處理液Lq1之區域。[camera] The camera 70 is installed in the chamber 10 and above the partition 15. The camera 70 is provided with, for example, an imaging element (for example, a CCD (charge coupled device)) and an optical system, and the optical system is an electronic diaphragm, a lens, and the like. The camera 70 can photograph the photographing area described next. That is, the imaging area is an area in which the substrate W is viewed from the upper imaging position, and includes the processing liquid Lq1 flowing down the substrate W from the ejection nozzle 31 and the processing liquid Lq1 reflected on the upper surface of the substrate W.

圖4係概略性地顯示藉由照相機70所取得的影像資料(以下稱為拍攝影像)IM1的一例之圖。在圖4的例子中，於拍攝影像IM1包含有三個噴出噴嘴31的前端。在拍攝影像IM1中包含有從三個噴出噴嘴31中之位於中央的噴出噴嘴31所噴出的略液柱狀的處理液Lq1。此處所謂的略液柱狀的處理液Lq1係指從噴出噴嘴31的前端朝基板W的上表面流下的處理液Lq1。FIG. 4 is a diagram schematically showing an example of image data (hereinafter referred to as a captured image) IM1 obtained by the camera 70. In the example of FIG. 4, the tip of three ejection nozzles 31 are included in the captured image IM1. The captured image IM1 includes a substantially liquid columnar processing liquid Lq1 ejected from the ejection nozzle 31 located in the center among the three ejection nozzles 31. The processing liquid Lq1 in the form of a substantially liquid column here refers to the processing liquid Lq1 flowing down from the tip of the ejection nozzle 31 toward the upper surface of the substrate W.

此外，在拍攝影像IM1中，於基板W的上表面包含有噴出噴嘴31的前端以及略液柱狀的處理液Lq1。此是藉由下述所得：來自照明部71的光線在噴出噴嘴31以及處理液Lq1反射後，在基板W的上表面經過鏡面反射並被照相機70的受光面受光。亦即，基板W的上表面作為鏡子而發揮作用，且基板W的上表面映照有噴出噴嘴31的外觀。照相機70係將拍攝影像IM1輸出至控制部9。In addition, in the captured image IM1, the top surface of the substrate W includes the tip of the ejection nozzle 31 and the slightly liquid columnar processing liquid Lq1. This is achieved by the fact that the light from the illuminating unit 71 is reflected by the ejection nozzle 31 and the processing liquid Lq1, and then specularly reflected on the upper surface of the substrate W and is received by the light-receiving surface of the camera 70. That is, the upper surface of the substrate W functions as a mirror, and the appearance of the ejection nozzle 31 is reflected on the upper surface of the substrate W. The camera 70 outputs the captured image IM1 to the control unit 9.

以下，將在拍攝影像IM1中映照至基板W的上表面之略液柱狀的處理液Lq1稱為處理液Lq1的鏡像Lqm1。此外，亦將拍攝影像IM1中包含有處理液Lq1以及處理液Lq1的鏡像Lqm1之影像稱為整體影像。Hereinafter, the roughly liquid columnar processing liquid Lq1 that is reflected on the upper surface of the substrate W in the captured image IM1 is referred to as a mirror image Lqm1 of the processing liquid Lq1. In addition, an image including the processing liquid Lq1 and the mirror image Lqm1 of the processing liquid Lq1 in the captured image IM1 is also referred to as an overall image.

如圖2所例示般，照相機70只要設置成可移動即可。在圖2的例子中，照相機70係固定至處理液供給部60的固定構件62。作為更具體的例子，設置有用以保持照相機70之照相機保持部73，該照相機保持部73係連結至固定構件62的噴嘴臂621。例如，照相機保持部73的基端側係藉由緊固構件(例如螺絲)固定至噴嘴臂621的前端部，照相機保持部73的前端側係藉由緊固構件固定並保持照相機70。照相機保持部73係例如由金屬(例如不鏽鋼)等所形成。移動機構63係使固定構件62移位，藉此使照相機70移動至基板W的上方的拍攝位置。更具體而言，移動機構63係使噴嘴基台622轉動，藉此能使照相機70在基板W的上方的拍攝位置與比處理罩40還外側的待機位置之間往復移動。As illustrated in Fig. 2, the camera 70 only needs to be movable. In the example of FIG. 2, the camera 70 is fixed to the fixing member 62 of the processing liquid supply unit 60. As a more specific example, a camera holding portion 73 for holding the camera 70 is provided, and the camera holding portion 73 is connected to the nozzle arm 621 of the fixing member 62. For example, the base end side of the camera holding portion 73 is fixed to the tip portion of the nozzle arm 621 by a fastening member (for example, a screw), and the front end side of the camera holding portion 73 is fixed and holding the camera 70 by a fastening member. The camera holding portion 73 is formed of, for example, metal (for example, stainless steel). The moving mechanism 63 displaces the fixing member 62, thereby moving the camera 70 to the imaging position above the substrate W. More specifically, the movement mechanism 63 rotates the nozzle base 622, thereby enabling the camera 70 to reciprocate between the imaging position above the substrate W and the standby position outside the processing cover 40.

在圖2的例子中，噴出噴嘴31的待機位置係相對於照相機70的待機位置位於順時鐘方向偏移略90度的位置。噴出噴嘴31以及照相機70係以從各者的待機位置彼此接近之方式移動，並在各者的處理位置以及拍攝位置停止。在照相機70的拍攝位置中，照相機70係以能拍攝包含有噴出噴嘴31的前端以及從噴出噴嘴31的前端噴出的略液柱狀的處理液Lq1之拍攝區域的姿勢被照相機保持部73保持。在圖2的例子中，照相機保持部73係相對於噴嘴臂621朝順時鐘方向側傾斜地突出，並在照相機保持部73的前端側保持照相機70。In the example of FIG. 2, the standby position of the ejection nozzle 31 is located at a position slightly shifted by 90 degrees in the clockwise direction with respect to the standby position of the camera 70. The ejection nozzle 31 and the camera 70 move so as to approach each other from the standby position of each, and stop at the processing position and the imaging position of each. In the imaging position of the camera 70, the camera 70 is held by the camera holding unit 73 in a posture capable of imaging the imaging area including the tip of the ejection nozzle 31 and the substantially liquid columnar processing liquid Lq1 ejected from the tip of the ejection nozzle 31. In the example of FIG. 2, the camera holding portion 73 protrudes obliquely to the clockwise side with respect to the nozzle arm 621, and holds the camera 70 on the front end side of the camera holding portion 73.

在此，說明噴出噴嘴31在處理位置停止且照相機70在拍攝位置停止的狀態中之照相機70與噴出噴嘴31之間的位置關係的一例。以下，使用三個噴出噴嘴31中之位於中央的噴出噴嘴31來說明該位置關係。Here, an example of the positional relationship between the camera 70 and the ejection nozzle 31 in a state where the ejection nozzle 31 is stopped at the processing position and the camera 70 is stopped at the imaging position will be described. Hereinafter, the discharge nozzle 31 located in the center among the three discharge nozzles 31 is used to explain the positional relationship.

在圖2的例子中，俯視觀看時照相機70係相對於噴出噴嘴31位於基板W的中心側。亦即，照相機70相對於基板W之徑方向的位置係位於比噴出噴嘴31的徑方向的位置還靠近基板W的中心側。In the example of FIG. 2, the camera 70 is located on the center side of the substrate W with respect to the ejection nozzle 31 when viewed from above. That is, the position of the camera 70 with respect to the radial direction of the substrate W is closer to the center of the substrate W than the position of the ejection nozzle 31 in the radial direction.

此外，在圖2的例子中，俯視觀看時，照相機70係從比基板W的徑方向還接近周方向之拍攝方向拍攝三個噴出噴嘴31的前端。亦即，照相機70相對於基板W之周方向的位置係相對於噴出噴嘴31的周方向的位置朝一側偏移。再以其他方式來說明，俯視觀看時，連結基板W的中心與噴出噴嘴31之虛擬的直線L1與照相機70的光軸所呈的角度θ1(0＜θ1＜90)係比與直線L1正交的虛擬的直線L2與照相機70的光軸所呈的角度θ2(02＜θ2＜90)還大。藉此，能在拍攝影像IM1中容易地觀看處理液Lq1相對於基板W的著液位置的徑方向位置。然而，當角度θ2過小時，從拍攝位置觀看時三個噴出噴嘴31有可能在深度方向排列重疊。在此情形中，由於難以將三個噴出噴嘴31全部包含在拍攝影像IM1，因此只要以從拍攝位置觀看時三個噴出噴嘴31適當地朝橫方向偏移之方式設定角度θ2即可。In addition, in the example of FIG. 2, when viewed from above, the camera 70 photographs the tips of the three ejection nozzles 31 from an imaging direction that is closer to the circumferential direction than the radial direction of the substrate W. That is, the position of the camera 70 with respect to the circumferential direction of the substrate W is shifted to one side with respect to the position of the discharge nozzle 31 in the circumferential direction. To explain in another way, when viewed from above, the angle θ1 (0<θ1<90) between the virtual straight line L1 connecting the center of the substrate W and the ejection nozzle 31 and the optical axis of the camera 70 is orthogonal to the straight line L1 The angle θ2 (02<θ2<90) between the virtual straight line L2 and the optical axis of the camera 70 is still large. Thereby, the radial position of the treatment liquid Lq1 with respect to the placement position of the substrate W can be easily viewed in the captured image IM1. However, when the angle θ2 is too small, there is a possibility that the three ejection nozzles 31 are arranged and overlapped in the depth direction when viewed from the shooting position. In this case, since it is difficult to include all the three ejection nozzles 31 in the captured image IM1, the angle θ2 only needs to be set such that the three ejection nozzles 31 are appropriately shifted in the horizontal direction when viewed from the imaging position.

此外，照相機70係從更接近周方向的拍攝方向拍攝拍攝區域，藉此從拍攝位置觀看時三個噴出噴嘴31係在深度方向彼此錯開。三個噴出噴嘴31的深度方向中的間隔係例如為數mm至十數mm左右。照相機70的景深(depth of field)係被較大地設定成這三個噴出噴嘴31的輪廓變成明確之程度。此外，照相機70與噴出噴嘴31之間的距離係例如為約100mm左右。In addition, the camera 70 photographs the photographing area from the photographing direction closer to the circumferential direction, whereby the three ejection nozzles 31 are displaced from each other in the depth direction when viewed from the photographing position. The interval in the depth direction of the three ejection nozzles 31 is, for example, about several mm to tens of mm. The depth of field of the camera 70 is set to a large extent so that the contours of the three ejection nozzles 31 become clear. In addition, the distance between the camera 70 and the ejection nozzle 31 is about 100 mm, for example.

在圖2的例子中，照相機70係相對於噴出噴嘴31位於基板保持部20的旋轉方向的上游側。相較於相對於噴出噴嘴31位於下流側之情形，在相對於噴出噴嘴31位於上游側之情形中基板W的周緣端部上的處理液Lq1的量有可能變少。此原因在於處理液Lq1有可能隨著基板W的旋轉而從基板W的周緣朝外側飛散。因此，只要照相機70相對於噴出噴嘴31位於上游側，則處理液Lq1難以附著至照相機70，或者處理液Lq1的氣化成分不易對照相機70造成影響。亦即，從保護照相機70的觀點而言，照相機70相對於噴出噴嘴31位於上游側之設計係較佳。In the example of FIG. 2, the camera 70 is located on the upstream side of the rotation direction of the substrate holding portion 20 with respect to the ejection nozzle 31. Compared to the case where the ejection nozzle 31 is located on the downstream side, when the ejection nozzle 31 is located on the upstream side, the amount of the processing liquid Lq1 on the peripheral edge of the substrate W may decrease. The reason for this is that the processing liquid Lq1 may scatter outward from the periphery of the substrate W as the substrate W rotates. Therefore, as long as the camera 70 is located on the upstream side with respect to the ejection nozzle 31, it is difficult for the processing liquid Lq1 to adhere to the camera 70, or the vaporized components of the processing liquid Lq1 hardly affect the camera 70. That is, from the viewpoint of protecting the camera 70, a design in which the camera 70 is located on the upstream side with respect to the ejection nozzle 31 is preferable.

此外，在噴出噴嘴31噴出處理液Lq1時，處理罩40處於已上升的狀態。此原因在於藉由處理罩40接住從基板W的周緣飛散的處理液Lq1。在此狀態下，噴出噴嘴31的前端(噴出口)係位於比處理罩40的上端位置還低的位置。例如，處理罩40的上端位置與基板W的上表面之間的鉛直方向中的間隔係被設定成約2mm至十數mm左右，噴出噴嘴31與基板W之間的間隔係被設定成約2mm左右以下(例如約1mm左右)。In addition, when the discharge nozzle 31 discharges the processing liquid Lq1, the processing cover 40 is in a raised state. The reason for this is that the processing liquid Lq1 scattered from the periphery of the substrate W is received by the processing cover 40. In this state, the tip (discharge port) of the discharge nozzle 31 is located at a position lower than the upper end position of the processing cover 40. For example, the distance in the vertical direction between the upper end position of the processing cover 40 and the upper surface of the substrate W is set to be about 2 mm to tens of mm, and the distance between the ejection nozzle 31 and the substrate W is set to be about 2 mm or less. (For example, about 1mm).

在此，為了進行比較，說明將照相機70的拍攝位置設定至比處理罩40還外側之情形。例如，將拍攝位置設定至比處理罩40還位於外側的空間中之接近噴出噴嘴31之側(圖3的腔室10內的右上的區域)。由於處理罩40的上端位置係位於比噴出噴嘴31的前端還高的位置，因此處理罩40有可能阻礙拍攝。亦即，即使欲從比處理罩40還外側的拍攝位置拍攝略液柱狀的處理液Lq1，該處理液Lq1亦有可能被處理罩40遮住。當將應避開處理罩40之拍攝位置設定成更高的位置時，變成從斜上方拍攝噴出噴嘴31。由於噴出噴嘴31的前端與基板W之間的間隔狹窄，因此當欲從斜上方拍攝略液柱狀的處理液Lq1時，此時該處理液Lq1有可能被噴出噴嘴31遮住。Here, for comparison, a case where the shooting position of the camera 70 is set to the outside of the processing cover 40 will be described. For example, the imaging position is set to the side close to the ejection nozzle 31 (the upper right area in the chamber 10 of FIG. 3) in a space located outside the processing cover 40. Since the upper end position of the processing cover 40 is located higher than the front end of the ejection nozzle 31, the processing cover 40 may hinder imaging. That is, even if the processing liquid Lq1 having a slightly liquid columnar shape is to be photographed from an imaging position outside the processing cover 40, the processing liquid Lq1 may be blocked by the processing cover 40. When the photographing position that should avoid the processing cover 40 is set to a higher position, the ejection nozzle 31 is photographed from diagonally above. Since the distance between the tip of the ejection nozzle 31 and the substrate W is narrow, when the slightly liquid columnar processing liquid Lq1 is imaged from diagonally above, the processing liquid Lq1 may be blocked by the ejection nozzle 31 at this time.

因此，亦考量將拍攝位置設定至比處理罩40還外側的空間中之相對於基板W的中心為與噴出噴嘴31之相反側(圖3的腔室10內的左上的區域)。藉此，有可能拍攝從噴出噴嘴31噴出的略液柱狀的處理液Lq1。然而，由於噴出噴嘴31的前端與照相機70的拍攝位置之間的距離變長，因此需要高解析度的照相機70或者望遠用的照相機70。Therefore, it is also considered that the imaging position is set to the opposite side of the ejection nozzle 31 with respect to the center of the substrate W in the space outside the processing cover 40 (the upper left region in the chamber 10 in FIG. 3). Thereby, it is possible to image the processing liquid Lq1 in the slightly liquid columnar shape ejected from the ejection nozzle 31. However, since the distance between the tip of the ejection nozzle 31 and the imaging position of the camera 70 becomes longer, a high-resolution camera 70 or a telephoto camera 70 is required.

相對於此，在本實施形態中，由於拍攝位置位於基板W的上方，因此在高度方向中容易使拍攝位置接近至基板W的上表面，且容易使照相機70的光軸沿著水平方向。因此，照相機70不會被處理罩40以及噴出噴嘴31遮住，能拍攝從噴出噴嘴31噴出的略液柱狀的處理液Lq1。照相機70的光軸與水平面之間所呈的角度係例如能設定成十數度左右以下。In contrast, in the present embodiment, since the imaging position is located above the substrate W, it is easy to approach the imaging position to the upper surface of the substrate W in the height direction, and it is easy to make the optical axis of the camera 70 along the horizontal direction. Therefore, the camera 70 is not blocked by the processing cover 40 and the ejection nozzle 31, and can photograph the substantially liquid columnar processing liquid Lq1 ejected from the ejection nozzle 31. The angle formed between the optical axis of the camera 70 and the horizontal plane can be set to approximately tens of degrees or less, for example.

此外，俯視觀看時亦能使照相機70接近至噴出噴嘴31。因此，能採用更低解析度、無須望遠、更便宜的照相機。由於此種照相機的尺寸小，故較佳。在圖4的例子中，由於照相機70與噴出噴嘴31之間的距離短，因此於拍攝影像IM1僅包含有基板W的周緣的一部分。In addition, the camera 70 can also be brought close to the ejection nozzle 31 when viewed from above. Therefore, it is possible to adopt a lower resolution, no telephoto, and cheaper camera. Due to the small size of this camera, it is better. In the example of FIG. 4, since the distance between the camera 70 and the ejection nozzle 31 is short, only a part of the peripheral edge of the substrate W is included in the captured image IM1.

在此，說明照相機70的高度方向中的拍攝位置的一例。照相機70的拍攝位置亦可設定成照相機70的拍攝元件的受光面的下端變成與處理罩40的上端位置相同或者比處理罩40的上端位置還低的位置。例如，照相機70與基板W的上表面之間的距離係可設定成1mm至5mm左右。藉此，能使照相機70更接近基板W的上表面，且能使照相機70的光軸更沿著水平方向。Here, an example of the shooting position in the height direction of the camera 70 will be described. The imaging position of the camera 70 may be set so that the lower end of the light-receiving surface of the imaging element of the camera 70 is the same as or lower than the upper end position of the processing cover 40. For example, the distance between the camera 70 and the upper surface of the substrate W can be set to about 1 mm to 5 mm. Thereby, the camera 70 can be brought closer to the upper surface of the substrate W, and the optical axis of the camera 70 can be more along the horizontal direction.

或者，亦可以照相機70的框體的下端變成與處理罩40的上端位置相同或者比處理罩40的上端位置還低的位置之方式設定照相機70的拍攝位置。Alternatively, the shooting position of the camera 70 may be set such that the lower end of the housing of the camera 70 becomes the same or lower than the upper end position of the processing cover 40.

此外，亦可能會有照相機保持部73支撐照相機70的下表面之情形。圖5係概略性地顯示照相機70以及照相機保持部73的一例之立體圖，圖5中亦顯示基板W以及噴出噴嘴31。在圖5的例子中，照相機保持部73係具備有：L字狀的連結構件731；上表面構件732，係位於照相機70的上表面側；側面構件733，係位於照相機70的側面側；以及下表面構件734，係位於照相機70的下表面側。連結構件731係具備有：第一棒狀構件，係從噴嘴臂621朝水平向延伸；以及第二棒狀構件，係從第一棒狀構件的前端朝鉛直下方延伸。第二棒狀構件的前端係連結至上表面構件732。在圖5的例子中，上表面構件732、側面構件733以及下表面構件734係具有板狀的形狀。上表面構件732以及下表面構件734係以厚度方向沿著鉛直方向的姿勢配置，側面構件733係以厚度方向沿著水平方向的姿勢配置。側面構件733係連結上表面構件732以及下表面構件734。下表面構件734亦作為用以支撐照相機70之支撐構件發揮作用。In addition, there may be cases where the camera holding portion 73 supports the lower surface of the camera 70. FIG. 5 is a perspective view schematically showing an example of the camera 70 and the camera holding portion 73, and FIG. 5 also shows the substrate W and the ejection nozzle 31. In the example of FIG. 5, the camera holding portion 73 is provided with: an L-shaped connecting member 731; an upper surface member 732 located on the upper surface side of the camera 70; a side member 733 located on the side surface of the camera 70; and The lower surface member 734 is located on the lower surface side of the camera 70. The connecting member 731 is provided with a first rod-shaped member that extends horizontally from the nozzle arm 621, and a second rod-shaped member that extends vertically downward from the tip of the first rod-shaped member. The front end of the second rod-shaped member is connected to the upper surface member 732. In the example of FIG. 5, the upper surface member 732, the side member 733, and the lower surface member 734 have a plate-like shape. The upper surface member 732 and the lower surface member 734 are arranged with the thickness direction along the vertical direction, and the side member 733 is arranged with the thickness direction along the horizontal direction. The side member 733 connects the upper surface member 732 and the lower surface member 734. The lower surface member 734 also functions as a supporting member for supporting the camera 70.

在此種構造中，照相機70的拍攝位置亦可設定成下表面構件734的下端變成與處理罩40的上端位置相同或者比處理罩40的上端位置還低的位置。藉此，亦能使照相機70更接近基板W的上表面，且能使照相機70的光軸更沿著水平方向。In this structure, the shooting position of the camera 70 may be set so that the lower end of the lower surface member 734 becomes the same as or lower than the upper end position of the processing cover 40. Thereby, the camera 70 can also be brought closer to the upper surface of the substrate W, and the optical axis of the camera 70 can be more along the horizontal direction.

[照明部] 如圖3所示，於腔室10內且於比區隔板15更上方設置有照明部71。照明部71係包含有例如LED(Light Emitting Diode；發光二極體)等光源。照明部71所照射的光的波長並無特別限制，但例如可採用可視光或者近紅外線光。在圖3的例子中，照明部71係配置於比照相機70還上方。例如，俯視觀看時照明部71係配置於與照相機70重疊的位置(參照圖2)。照明部71亦可被照相機保持部73保持。例如，照明部71亦可固定至照相機保持部73的上表面構件732的上表面。通常，由於腔室10的內部為暗室，因此在照相機70進行拍攝時照明部71係對拍攝區域照射光線。[Lighting Department] As shown in FIG. 3, an illuminating part 71 is provided in the chamber 10 and above the partition 15. The lighting unit 71 includes a light source such as an LED (Light Emitting Diode). The wavelength of the light irradiated by the illumination unit 71 is not particularly limited, but for example, visible light or near-infrared light can be used. In the example of FIG. 3, the illumination unit 71 is arranged above the camera 70. For example, when viewed from above, the lighting unit 71 is arranged at a position overlapping the camera 70 (see FIG. 2). The lighting part 71 may also be held by the camera holding part 73. For example, the lighting part 71 may be fixed to the upper surface of the upper surface member 732 of the camera holding part 73. Normally, since the inside of the chamber 10 is a dark room, the illuminating unit 71 irradiates the imaging area with light when the camera 70 performs imaging.

[控制部] 控制部9係控制基板處理裝置100的各種構成並對基板W進行處理。此外，控制部9係對藉由照相機70所取得的拍攝影像IM1進行影像處理。因此，控制部9係作為影像處理部發揮作用。由於照相機70係從基板W的上方的拍攝位置拍攝噴出噴嘴31的前端，因此於藉由照相機70所取得的拍攝影像IM1適當地包含有從噴出噴嘴31噴出的略液柱狀的處理液Lq1。控制部9係藉由對於拍攝影像IM1的影像處理監視(斜面監視)從噴出噴嘴31噴出的處理液Lq1的著液位置。監視處理的一例係容後詳細說明。[Control Department] The control unit 9 controls various configurations of the substrate processing apparatus 100 and processes the substrate W. In addition, the control unit 9 performs image processing on the captured image IM1 obtained by the camera 70. Therefore, the control unit 9 functions as a video processing unit. Since the camera 70 photographs the tip of the ejection nozzle 31 from the imaging position above the substrate W, the captured image IM1 obtained by the camera 70 appropriately includes the substantially liquid columnar processing liquid Lq1 ejected from the ejection nozzle 31. The control unit 9 monitors the impingement position of the treatment liquid Lq1 ejected from the ejection nozzle 31 by image processing of the captured image IM1 (slope monitoring). An example of monitoring processing will be described in detail later.

作為控制部9的硬體的構成係與一般的電腦同樣。亦即，控制部9係構成為具備有下述構件等：CPU(Central Processing Unit；中央處理器)，係進行各種運算處理；ROM(Read Only Memory；唯讀記憶體)，係屬於讀出專用的記憶體，用以記憶基本程式；RAM(Random Access Memory；隨機存取記憶體)，係屬於讀寫自如的記憶體，用以記憶各種資訊；以及磁碟，係預先記憶控制用軟體以及資料等。控制部9的CPU係執行預定的處理程式，藉此控制部9係控制基板處理裝置100的各個動作機構並進行基板處理裝置100中的處理。此外，控制部9的CPU係執行預定的處理程式，藉此進行影像處理。此外，控制部9的功能的一部分或者全部亦可藉由專用的硬體來實現。The configuration of the hardware as the control unit 9 is the same as that of a general computer. That is, the control unit 9 is configured to include the following components: CPU (Central Processing Unit; central processing unit), which performs various arithmetic processing; ROM (Read Only Memory; read-only memory), which is dedicated to reading RAM (Random Access Memory), which is a freely readable and writable memory, used to store various information; and a magnetic disk, which pre-stores control software and data Wait. The CPU of the control section 9 executes a predetermined processing program, whereby the control section 9 controls each operation mechanism of the substrate processing apparatus 100 and performs processing in the substrate processing apparatus 100. In addition, the CPU of the control unit 9 executes a predetermined processing program, thereby performing image processing. In addition, part or all of the functions of the control unit 9 may be realized by dedicated hardware.

[通報部] 通報部93係例如為聲音輸出部(例如揚聲器)或者顯示器等。通報部93係能對作業者進行各種通報。例如，聲音輸出部輸出通報音(蜂鳴音(buzzer)或者聲音)或者顯示器顯示通報資訊，藉此能對作業者進行各種通報。通報部93的通報係被控制部9控制。[Notification Department] The notification unit 93 is, for example, a sound output unit (for example, a speaker) or a display. The notification department 93 is capable of various notifications to operators. For example, the sound output unit outputs a notification sound (buzzer or sound) or displays notification information on a display, thereby enabling various notifications to the operator. The notification system of the notification unit 93 is controlled by the control unit 9.

[控制部的動作] 圖6係顯示基板處理的一例之流程圖。首先，在步驟S1中，藉由主搬運機器人103將基板W搬運至基板保持部20上。基板保持部20係保持被搬運的基板W。[Operation of Control Unit] Fig. 6 is a flowchart showing an example of substrate processing. First, in step S1, the main transfer robot 103 transfers the substrate W to the substrate holding portion 20. The substrate holding portion 20 holds the substrate W to be conveyed.

接著，在步驟S2中，控制部9係控制移動機構33使噴出噴嘴31朝處理位置移動，並控制移動機構63使照相機70朝拍攝位置移動。接著，在步驟S3中，控制部9係控制升降機構44使處理罩40上升，並控制自轉馬達22使自轉基座21旋轉。自轉基座21的旋轉速度係例如設定成約1000rpm以上。Next, in step S2, the control unit 9 controls the moving mechanism 33 to move the ejection nozzle 31 to the processing position, and controls the moving mechanism 63 to move the camera 70 to the imaging position. Next, in step S3, the control unit 9 controls the elevating mechanism 44 to raise the processing cover 40, and controls the autorotation motor 22 to rotate the autorotation base 21. The rotation speed of the rotation base 21 is set to approximately 1000 rpm or more, for example.

接著，在步驟S4中，控制部9係控制照相機70使照相機70開始拍攝。照相機70係以預定的訊框速率(frame rate)(例如60訊框(frame)／秒)拍攝拍攝區域，並依序將所取得的拍攝影像IM1輸出至控制部9。如後所述，控制部9係依據對於拍攝影像IM1的影像處理來監視處理液Lq1的噴出狀態。Next, in step S4, the control unit 9 controls the camera 70 so that the camera 70 starts shooting. The camera 70 captures the shooting area at a predetermined frame rate (for example, 60 frames/sec), and sequentially outputs the captured images IM1 to the control unit 9. As described later, the control unit 9 monitors the discharge state of the treatment liquid Lq1 based on image processing of the captured image IM1.

接著，在步驟S5中，控制部9係開始從噴出噴嘴31噴出處理液Lq1。具體而言，控制部9係將開啟訊號輸出至開閉閥35。開閉閥35係依據開啟訊號進行開啟動作並將配管34開啟。藉此，從噴出噴嘴31噴出來自處理液供給源37的處理液Lq1並著液至基板W的上表面的端部。處理液Lq1的流量係設定成例如數ml／分鐘至數十ml／分鐘左右。該處理液Lq1的流量係比處理基板W的整面時的處理液的流量(例如從處理液供給部65的噴出噴嘴66噴出的處理液的流量)還少。Next, in step S5, the control unit 9 starts to eject the processing liquid Lq1 from the ejection nozzle 31. Specifically, the control unit 9 outputs an opening signal to the on-off valve 35. The opening and closing valve 35 performs an opening action according to the opening signal and opens the pipe 34. Thereby, the processing liquid Lq1 from the processing liquid supply source 37 is ejected from the ejection nozzle 31 and reaches the end of the upper surface of the substrate W. The flow rate of the treatment liquid Lq1 is set to, for example, about several ml/minute to several tens of ml/minute. The flow rate of the processing liquid Lq1 is smaller than the flow rate of the processing liquid when the entire surface of the substrate W is processed (for example, the flow rate of the processing liquid discharged from the discharge nozzle 66 of the processing liquid supply unit 65).

一邊使基板W旋轉一邊對基板W的端部噴出處理液Lq1，藉此處理液Lq1係作用至基板W的周緣端部的整個區域。藉由處理液Lq1，能去除附著至基板W的周緣端部的不要物質(斜面處理)。能從三個噴出噴嘴31的噴出口依序噴出已與不要物質(例如膜)的種類因應的處理液Lq1。此外，亦可從三個噴出噴嘴31的至少兩個噴出口同時期地噴出處理液。The processing liquid Lq1 is sprayed to the end of the substrate W while rotating the substrate W, whereby the processing liquid Lq1 acts on the entire area of the peripheral end of the substrate W. With the treatment liquid Lq1, unnecessary substances adhering to the peripheral edge of the substrate W can be removed (bevel treatment). The treatment liquid Lq1 corresponding to the kind of unnecessary substance (for example, film) can be sequentially discharged from the discharge ports of the three discharge nozzles 31. In addition, the treatment liquid may be simultaneously ejected from at least two ejection ports of the three ejection nozzles 31.

在斜面處理中，為了適當地去除附著至基板W的周緣端部的不要物質，希望以高精度控制處理液Lq1的流量。In the bevel processing, in order to appropriately remove unnecessary substances adhering to the peripheral edge of the substrate W, it is desirable to control the flow rate of the processing liquid Lq1 with high accuracy.

此外，於基板W的上表面中之周緣端部以外的器件區域形成有器件。由於處理液Lq1去除膜，因此不希望處理液Lq1進入至器件區域。此原因在於有可能會去除器件區域內的必要的膜。另一方面，需要去除存在於周緣端部的不需要的膜。為了滿足此要求，希望在斜面處理中以高精度控制處理液Lq1的著液位置。處理液Lq1相對於基板W之著液位置的必要精度係例如為數十(例如五十)µm左右。In addition, in the upper surface of the substrate W, devices are formed in device regions other than the peripheral end portion. Since the treatment liquid Lq1 removes the film, it is not desirable that the treatment liquid Lq1 enter the device region. The reason for this is that the necessary film in the device area may be removed. On the other hand, it is necessary to remove the unnecessary film present at the peripheral edge. In order to meet this requirement, it is desirable to control the filling position of the treatment liquid Lq1 with high accuracy in the slope treatment. The required accuracy of the deposition position of the processing liquid Lq1 with respect to the substrate W is, for example, about several tens (for example, fifty) µm.

在斜面處理中，由於處理液Lq1的流量少，因此處理液Lq1容易受到基板W的旋轉所伴隨的氣流的影響或者周圍的靜電的影響，且處理液Lq1的著液位置等可能會變動。In the slope processing, since the flow rate of the processing liquid Lq1 is small, the processing liquid Lq1 is easily affected by the airflow accompanying the rotation of the substrate W or the surrounding static electricity, and the impregnation position of the processing liquid Lq1 may fluctuate.

控制部9係在監視處理中監視處理液Lq1的噴出狀態。監視處理的具體性的動作係容後詳細說明。The control unit 9 monitors the discharge state of the treatment liquid Lq1 during the monitoring process. The specific actions of the monitoring process will be described in detail later.

控制部9係在斜面處理的結束條件成立時，在步驟S6中停止從噴出噴嘴31噴出處理液Lq1。雖然斜面處理的結束條件無須特別限定，但能採用例如從步驟S5起的經過時間達至預定期間這種條件。控制部9係響應結束條件的成立，將關閉訊號輸出至開閉閥35。開閉閥35係依據關閉訊號進行關閉動作並將配管34關閉。藉此，結束處理液Lq1的噴出。此外，在設置有倒吸閥36之情形中，控制部9係將吸入訊號輸出至倒吸閥36。The control unit 9 stops the discharge of the treatment liquid Lq1 from the discharge nozzle 31 in step S6 when the end condition of the slope treatment is satisfied. Although the end condition of the slope processing is not particularly limited, for example, a condition that the elapsed time from step S5 reaches a predetermined period can be adopted. The control unit 9 outputs a closing signal to the on-off valve 35 in response to the establishment of the end condition. The on-off valve 35 closes the pipe 34 according to the closing signal. Thereby, the discharge of the treatment liquid Lq1 is ended. In addition, in the case where the suction valve 36 is provided, the control unit 9 outputs the suction signal to the suction valve 36.

亦可在停止噴出處理液Lq1後適當地進行用以使基板W乾燥之工序。接著，在步驟S7中，控制部9係使照相機70結束拍攝。亦即，結束監視處理。接著，在步驟S8中，控制部9係控制自轉馬達22結束自轉基座21的旋轉，並控制升降機構44使處理罩40下降。接著，在步驟S9中，控制部9係分別控制移動機構33以及移動機構63，使噴出噴嘴31以及照相機70移動至各者的待機位置。The process for drying the substrate W may be appropriately performed after stopping the ejection of the processing liquid Lq1. Next, in step S7, the control unit 9 causes the camera 70 to end imaging. That is, the monitoring process is ended. Next, in step S8, the control unit 9 controls the rotation motor 22 to end the rotation of the rotation base 21, and controls the elevating mechanism 44 to lower the processing cover 40. Next, in step S9, the control part 9 controls the moving mechanism 33 and the moving mechanism 63, respectively, and moves the ejection nozzle 31 and the camera 70 to each standby position.

圖7係顯示監視處理的動作的一例之流程圖。圖7所示的處理流程係在每次拍攝影像IM1被輸入至控制部9時被執行。首先，在步驟S11中，控制部9係特定拍攝影像IM1中之以下所說明的判定區域R2。Fig. 7 is a flowchart showing an example of the operation of the monitoring process. The processing flow shown in FIG. 7 is executed every time the captured image IM1 is input to the control unit 9. First, in step S11, the control unit 9 specifies a determination area R2 described below in the captured image IM1.

圖8係概略性地顯示拍攝影像IM1的放大圖的一例之圖。在圖8的例子中顯示已將一個噴出噴嘴31的前端附近的區域R1放大之圖。判定區域R2係拍攝影像IM1中的噴出噴嘴31的正下方的區域，且為包含有從噴出噴嘴31朝基板W噴出的略液柱狀的處理液Lq1的至少一部分與映照至基板W的上表面的處理液Lq1的鏡像Lqm1的至少一部分之區域。於判定區域R2包含有處理液Lq1與處理液Lq1的鏡像Lqm1之間的交界B1。FIG. 8 is a diagram schematically showing an example of an enlarged view of the captured image IM1. In the example of FIG. 8, an enlarged view of the region R1 near the tip of one ejection nozzle 31 is shown. The determination area R2 is the area directly below the ejection nozzle 31 in the captured image IM1, and includes at least a part of the slightly liquid columnar processing liquid Lq1 ejected from the ejection nozzle 31 toward the substrate W and the upper surface of the substrate W. The area of at least a part of the mirror image Lqm1 of the treatment liquid Lq1. The judgment region R2 includes a boundary B1 between the treatment liquid Lq1 and the mirror image Lqm1 of the treatment liquid Lq1.

判定區域R2的橫方向的寬度係設定成比從噴出噴嘴31噴出的處理液Lq1的液柱寬度還寬。判定區域R2的橫方向的位置係設定成處理液Lq1的寬度方向的兩端包含於判定區域R2內。判定區域R2的縱方向的寬度係定成判定區域R2包含有處理液Lq1與處理液Lq1的鏡像Lqm1。The width of the determination area R2 in the horizontal direction is set to be wider than the width of the liquid column of the processing liquid Lq1 ejected from the ejection nozzle 31. The position in the horizontal direction of the determination area R2 is set so that both ends in the width direction of the processing liquid Lq1 are included in the determination area R2. The width of the determination area R2 in the vertical direction is determined so that the determination area R2 includes the processing liquid Lq1 and the mirror image Lqm1 of the processing liquid Lq1.

拍攝影像IM1內的判定區域R2係相對於噴出噴嘴31預先設定。亦即，預先設定了噴出噴嘴31與判定區域R2之間的相對性的位置關係。用以顯示該位置關係之資訊亦可記憶於控制部9的記憶媒體。The determination area R2 in the captured image IM1 is set in advance with respect to the ejection nozzle 31. That is, the relative positional relationship between the ejection nozzle 31 and the determination region R2 is set in advance. The information used to display the positional relationship can also be stored in the storage medium of the control unit 9.

此外，由於照相機70相對於噴出噴嘴31之相對位置係有可能會因應移動機構33、63的精度而變動，因此拍攝影像IM1內的噴出噴嘴31的位置亦可能會變動。因此，只要控制部9特定拍攝影像IM1內的噴出噴嘴31的位置並特定相對於已特定的噴出噴嘴31位於預定的位置關係之判定區域R2即可。為了特定拍攝影像IM1內的噴出噴嘴31的位置而包含有噴出噴嘴31的前端的外觀之參照影像亦預先記憶於控制部9的記憶媒體。控制部9係藉由基於參照影像的圖案匹配(pattern matching)特定拍攝影像IM1內的噴出噴嘴31的位置，並針對所特定的噴出噴嘴31依據預定的相對位置關係特定判定區域R2。藉此，即使在拍攝影像IM1內噴出噴嘴31的位置變動，亦能與噴出噴嘴31的位置對應並適當地特定判定區域R2。In addition, since the relative position of the camera 70 with respect to the ejection nozzle 31 may vary according to the accuracy of the moving mechanisms 33 and 63, the position of the ejection nozzle 31 in the captured image IM1 may also vary. Therefore, the control unit 9 only needs to identify the position of the ejection nozzle 31 in the captured image IM1 and identify the determination area R2 located in a predetermined positional relationship with the ejection nozzle 31 that has been identified. In order to identify the position of the ejection nozzle 31 in the captured image IM1, the reference image including the appearance of the tip of the ejection nozzle 31 is also stored in the storage medium of the control unit 9 in advance. The control unit 9 specifies the position of the ejection nozzle 31 in the captured image IM1 by pattern matching based on the reference image, and specifies the determination area R2 for the specified ejection nozzle 31 according to a predetermined relative positional relationship. Thereby, even if the position of the ejection nozzle 31 in the captured image IM1 changes, the determination area R2 can be appropriately specified corresponding to the position of the ejection nozzle 31.

在噴出噴嘴31正在噴出處理液Lq1的狀態下，於判定區域R2包含有略液柱狀的處理液Lq1的一部分。由於照明部71所照射的光線係在處理液Lq1反射並被照相機70受光，因此反映處理液Lq1之像素的亮度值係變得比其他的像素的亮度值還高。此外，在照相機70為灰階(gray scale)的黑白照相機之情形中，像素的像素質係視為顯示亮度值。在此，作為一例，照相機70係採用黑白照相機。In a state where the discharge nozzle 31 is discharging the treatment liquid Lq1, a part of the treatment liquid Lq1 having a substantially liquid columnar shape is included in the determination region R2. Since the light irradiated by the illumination unit 71 is reflected by the treatment liquid Lq1 and received by the camera 70, the brightness value of the pixel reflecting the treatment liquid Lq1 becomes higher than the brightness values of other pixels. In addition, when the camera 70 is a gray scale black and white camera, the pixel quality of the pixel is regarded as the display brightness value. Here, as an example, the camera 70 is a monochrome camera.

接著，在步驟S12中，控制部9係依據判定區域R2內的處理液Lq1的整體影像來特定處理液Lq1的著液位置。以下說明著液位置的特定方法的一例。Next, in step S12, the control unit 9 specifies the filling position of the treatment liquid Lq1 based on the overall image of the treatment liquid Lq1 in the determination region R2. An example of the method of specifying the landing position is described below.

如圖8所例示般，整體影像係在基板W的表面中(亦即在處理液Lq1與處理液Lq1的鏡像Lqm1之間的交界B1中)彎曲。此原因在於：在斜面處理中，來自噴出噴嘴31的處理液Lq1的噴出方向相對於基板W並非鉛直，而是因為伴隨著基板W的旋轉之氣流等各種原因而變成稍微傾斜。此外，由於彎曲的程度(處理液Lq1的噴出方向與處理液Lq1的鏡像Lqm1的噴出方向所呈的角度)取決於照相機70的拍攝方向(具體而言為角度θ2)，因此只要以彎曲變成明確之方式設定照相機70的拍攝方向即可。As illustrated in FIG. 8, the overall image is curved in the surface of the substrate W (that is, in the boundary B1 between the processing liquid Lq1 and the mirror image Lqm1 of the processing liquid Lq1). The reason for this is that in the slope processing, the ejection direction of the processing liquid Lq1 from the ejection nozzle 31 is not vertical with respect to the substrate W, but is slightly inclined due to various reasons such as air flow accompanying the rotation of the substrate W. In addition, since the degree of curvature (the angle between the ejection direction of the processing liquid Lq1 and the ejection direction of the mirror image Lqm1 of the processing liquid Lq1) depends on the imaging direction of the camera 70 (specifically, the angle θ2), so long as the curvature becomes clear Just set the shooting direction of the camera 70 in this way.

由於彎曲位置係顯示基板W的上表面中的處理液Lq1的著液位置，因此控制部9係在拍攝影像IM1中特定彎曲位置。具體而言，例如控制部9係針對判定區域R2進行邊緣檢測處理以及二值化處理並取得二值化影像IM2。圖9係概略性地顯示二值化影像IM2的一例之圖。在圖9中，以留白顯示具有高的像素質(在此為「1」)的影像，以網點的陰影顯示具有低的像素值(在此為「0」)的像素。亦即，留白的區域係顯示在拍攝影像IM1的判定區域R2內亮度值的變化變得急遽之區域，網點的區域係顯示拍攝影像IM1的判定區域R2內亮度值的變化緩和的區域。以下亦將以留白所顯示的區域稱為高像素值區域R4。Since the bending position indicates the impingement position of the processing liquid Lq1 on the upper surface of the substrate W, the control unit 9 specifies the bending position in the captured image IM1. Specifically, for example, the control unit 9 performs edge detection processing and binarization processing on the determination area R2 to obtain a binarized image IM2. FIG. 9 is a diagram schematically showing an example of the binary image IM2. In FIG. 9, an image with a high pixel quality (here, "1") is displayed with a blank, and a pixel with a low pixel value (here, "0") is displayed with a shadow of a halftone dot. That is, the blank area is an area where the change in the brightness value in the determination area R2 of the captured image IM1 becomes sharp, and the halftone area is an area where the change in the brightness value in the determination area R2 of the captured image IM1 is mild. Hereinafter, the area displayed with the blank is also referred to as the high pixel value area R4.

如圖9所例示般，於二值化影像IM2的高像素值區域R4包含有：直線成分LC1，係沿著處理液Lq1的噴出方向延伸；以及直線成分LC2，係沿著處理液Lq1的鏡像Lqm1的噴出方向延伸。直線成分LC1的下側的一端以及直線成分LC2的上側的一端係在處理液Lq1與處理液Lq1的鏡像Lqm1之間的境界B1中以已與噴出方向相應的連結角度彼此連結。As illustrated in FIG. 9, the high pixel value region R4 of the binary image IM2 includes: a linear component LC1, which extends along the ejection direction of the processing liquid Lq1; and a linear component LC2, which is a mirror image of the processing liquid Lq1 The ejection direction of Lqm1 extends. The lower end of the linear component LC1 and the upper end of the linear component LC2 are connected to each other at a connection angle corresponding to the ejection direction in the boundary B1 between the processing liquid Lq1 and the mirror image Lqm1 of the processing liquid Lq1.

控制部9係依據二值化影像IM2來特定直線成分LC1與直線成分LC2。此特定只要採用公知的手法即可，但亦可例如以下述方式進行。The control unit 9 specifies the linear component LC1 and the linear component LC2 based on the binarized image IM2. This identification may be performed using a known technique, but it may also be performed in the following manner, for example.

在圖9的例子中，由於在二值化影像IM2中於高像素值區域R4包含有用以顯示噴出噴嘴31的前端部以及基板W的周緣之區域R41，因此首先亦可在二值化影像IM2中去除該區域R41。例如，亦可藉由遮罩處理去除區域R41。In the example of FIG. 9, since the high pixel value region R4 in the binarized image IM2 includes a region R41 for displaying the tip of the ejection nozzle 31 and the periphery of the substrate W, the binarized image IM2 Remove the area R41. For example, the region R41 may also be removed by masking.

高像素值區域R4中之區域R41以外的區域R42係顯示處理液Lq1以及處理液Lq1的鏡像Lqm1。因此，針對二值化影像IM2進一步地進行邊緣檢測處理，並特定邊緣以預定以上的長度延伸之直線成分。此外，由於處理液Lq1的噴出方向的範圍係能預先藉由實驗或者模擬等來設想，因此直線成分LC1以及直線成分LC2各者的延伸方向的範圍亦能預先設定。因此，控制部9係在區域R41中特定延伸方向變成預先設定的範圍內之直線成分。The region R42 other than the region R41 in the high pixel value region R4 displays the treatment liquid Lq1 and the mirror image Lqm1 of the treatment liquid Lq1. Therefore, an edge detection process is further performed on the binarized image IM2, and a linear component whose edge extends over a predetermined length is specified. In addition, since the range of the ejection direction of the processing liquid Lq1 can be conceived in advance through experiments or simulations, the range of the extending direction of each of the linear component LC1 and the linear component LC2 can also be set in advance. Therefore, the control unit 9 makes the specific extension direction in the region R41 a linear component within a preset range.

此外，如圖9所例示般，直線成分LC1係從右上朝左下延伸，直線成分LC2係從左上朝右下延伸。因此，控制部9係特定從右上朝左下延伸之直線成分作為直線成分LC1，並特定從左上朝右下延伸之直線成分作為直線成分LC2。In addition, as illustrated in FIG. 9, the linear component LC1 extends from the upper right to the lower left, and the linear component LC2 extends from the upper left to the lower right. Therefore, the control unit 9 specifies the linear component extending from the upper right to the lower left as the linear component LC1, and the linear component extending from the upper left to the lower right as the linear component LC2.

接著，控制部9係求出直線成分LC1以及直線成分LC2之間的交點作為彎曲位置。控制部9係依據彎曲位置求出處理液Lq1的著液位置。例如，亦可求出彎曲位置作為著液位置。Next, the control unit 9 obtains the intersection point between the linear component LC1 and the linear component LC2 as the bending position. The control unit 9 obtains the impingement position of the treatment liquid Lq1 based on the bending position. For example, the bending position may be obtained as the impingement position.

此外，雖然在圖9的例子中顯示一個直線成分LC1以及一個直線成分LC2的群組，但實際上能夠特定複數個群組。因此，亦可依據複數個群組各者的彎曲位置求出著液位置。例如，亦可求出複數個彎曲位置的平均作為著液位置。In addition, although a group of one linear component LC1 and one linear component LC2 is shown in the example of FIG. 9, in fact, a plurality of groups can be specified. Therefore, the impregnation position can also be obtained from the bending position of each of the plural groups. For example, the average of a plurality of bending positions may be obtained as the impingement position.

接著，在步驟S13中，控制部9係判定求出的著液位置與位置基準值之間的差(絕對值)是否為預定的位置容許值以上。亦即，控制部9係判定著液位置是否處於適當的範圍內。作為位置基準值，能採用用以顯示適當的著液位置之值。例如，亦可依據在正常地噴出處理液Lq1的狀態下所拍攝的複數個拍攝影像IM1算出正常的著液位置的平均值，並採用該著液位置的平均值作為位置基準值。位置容許值係預先設定。位置基準值以及位置容許值亦可例如記憶於控制部9的記憶媒體。Next, in step S13, the control unit 9 determines whether or not the difference (absolute value) between the obtained filling position and the position reference value is greater than or equal to a predetermined position tolerance value. That is, the control unit 9 determines whether the liquid position is within an appropriate range. As the position reference value, a value for displaying an appropriate filling position can be used. For example, it is also possible to calculate the average value of the normal implantation positions from a plurality of captured images IM1 captured in a state where the treatment liquid Lq1 is normally ejected, and use the average value of the implantation positions as the position reference value. The position tolerance is set in advance. The position reference value and the position allowable value may also be stored in the storage medium of the control unit 9, for example.

在該差為位置容許值以上時，在步驟S14中，控制部9係將此種主旨(亦即著液異常)通報至通報部93並結束處理。另一方面，在該差未滿容許值時，不執行步驟S14，結束處理。When the difference is greater than or equal to the position allowable value, in step S14, the control unit 9 notifies the notification unit 93 of such a subject (that is, an abnormality in the landing) and ends the processing. On the other hand, when the difference is less than the allowable value, step S14 is not executed, and the process ends.

如上所述，控制部9係依據包含有拍攝影像IM1中的處理液Lq1與處理液Lq1的鏡像Lqm1之整體影像求出著液位置。於整體影像包含有處理液Lq1與處理液Lq1的鏡像Lqm1之間的交界B1，且該交界B1係反映處理液Lq1朝向基板W的著液位置。亦即，能依據包含有著液位置的資訊之整體影像適當地求出著液位置。As described above, the control unit 9 obtains the impregnation position based on the overall image including the treatment liquid Lq1 in the captured image IM1 and the mirror image Lqm1 of the treatment liquid Lq1. The overall image includes the boundary B1 between the processing liquid Lq1 and the mirror image Lqm1 of the processing liquid Lq1, and the boundary B1 reflects the impregnation position of the processing liquid Lq1 toward the substrate W. That is, it is possible to appropriately find the impingement position based on the overall image including the information with the liquid position.

此外，在上述例子中，求出整體影像的彎曲點並依據該彎曲點特定著液位置。由於彎曲點係位於處理液Lq1與處理液Lq1的鏡像Lqm1之間的交界B1上，因此能適當地求出著液位置。In addition, in the above example, the bending point of the overall image is obtained and the impregnation position is specified based on the bending point. Since the bending point is located on the boundary B1 between the processing liquid Lq1 and the mirror image Lqm1 of the processing liquid Lq1, the impingement position can be appropriately determined.

[處理液Lq1的鏡像Lqm1] 有可能於基板W的上表面形成有例如金屬圖案、半導體圖案、絕緣層圖案以及阻劑圖案(resist pattern)等各種圖案。因此，映照至基板W的上表面之處理液Lq1(亦即鏡像Lqm1)係受到這些圖案的影響。亦即，於處理液Lq1的鏡像Lqm1包含有雜訊。[Mirror image Lqm1 of treatment liquid Lq1] Various patterns such as metal patterns, semiconductor patterns, insulating layer patterns, and resist patterns may be formed on the upper surface of the substrate W. Therefore, the processing liquid Lq1 (that is, the mirror image Lqm1) reflected on the upper surface of the substrate W is affected by these patterns. That is, the mirror image Lqm1 of the treatment liquid Lq1 includes noise.

因此，只要將照相機70的曝光時間設定成基板W旋轉一圈所需的旋轉時間以上即可。藉此，由於拍攝影像IM1中的基板W的圖案被平均化且被同樣化，因此能將拍攝影像IM1中的處理液Lq1的鏡像Lqm1作成更正確的影像。換言之，能降低處理液Lq1的鏡像Lqm1所含有的雜訊。因此，容易求出處理液Lq1的鏡像Lqm1的噴出方向(亦即直線成分LC2)。Therefore, it is only necessary to set the exposure time of the camera 70 to be longer than the rotation time required for the substrate W to make one rotation. Thereby, since the pattern of the substrate W in the captured image IM1 is averaged and equalized, the mirror image Lqm1 of the processing liquid Lq1 in the captured image IM1 can be made into a more accurate image. In other words, the noise contained in the mirror image Lqm1 of the processing liquid Lq1 can be reduced. Therefore, it is easy to find the ejection direction of the mirror image Lqm1 of the treatment liquid Lq1 (that is, the linear component LC2).

或者，曝光時間亦可比旋轉時間還短。控制部9亦可將在比旋轉時間還長的預定時間內所拍攝的複數個拍攝影像IM1予以積分或者平均，並於每個預定時間生成加工影像。在每個預定時間的加工影像中，由於基板W的上表面的圖案被平均化且被同樣化，因此能將處理液Lq1的鏡像Lqm1作成更正確的影像。Alternatively, the exposure time may be shorter than the rotation time. The control unit 9 may also integrate or average a plurality of captured images IM1 captured within a predetermined time that is longer than the rotation time, and generate a processed image every predetermined time. In the processed image for each predetermined time, since the pattern on the upper surface of the substrate W is averaged and the same, the mirror image Lqm1 of the processing liquid Lq1 can be made into a more accurate image.

[照相機的固定] 此外，在上述例子中，照相機70係與噴出噴嘴61同樣地被固定於固定構件62。亦即，兼用用以使照相機70移動之機構以及用以使噴出噴嘴61移動之機構。因此，與分別設置專用的機構之情形相比，能降低製造成本以及尺寸。[Fixation of the camera] In addition, in the above example, the camera 70 is fixed to the fixing member 62 in the same way as the ejection nozzle 61. That is, a mechanism for moving the camera 70 and a mechanism for moving the ejection nozzle 61 are used both. Therefore, it is possible to reduce manufacturing cost and size compared to a case where dedicated mechanisms are provided separately.

圖10係概略性地顯示處理單元1A的構成的一例之俯視圖。處理單元1A係除了照相機70的固定對象這一點之外，具備有與處理單元1同樣的構成。在處理單元1A中，照相機70係以與成為拍攝對象的噴出噴嘴31相同之方式固定至固定構件32。更具體而言，照相機保持部73係在噴嘴臂321的側方中連結至噴嘴臂321。照相機保持部73係保持照相機70。照相機70係經由照相機保持部73固定至固定構件32。照相機70以及照相機保持部73係相對於噴嘴臂321配置於逆時鐘方向側(亦即從噴出噴嘴31的待機位置朝向處理位置之側)。此外，照相機70係以可拍攝噴出噴嘴31的前端以及從噴出噴嘴31噴出的處理液Lq1之姿勢被照相機保持部73保持。FIG. 10 is a plan view schematically showing an example of the configuration of the processing unit 1A. The processing unit 1A has the same configuration as the processing unit 1 except for the point that the camera 70 is fixed. In the processing unit 1A, the camera 70 is fixed to the fixing member 32 in the same manner as the ejection nozzle 31 that is the subject of photography. More specifically, the camera holding portion 73 is connected to the nozzle arm 321 in the side of the nozzle arm 321. The camera holding unit 73 holds the camera 70. The camera 70 is fixed to the fixing member 32 via the camera holding portion 73. The camera 70 and the camera holding portion 73 are arranged on the counterclockwise side with respect to the nozzle arm 321 (that is, from the standby position of the ejection nozzle 31 toward the processing position side). In addition, the camera 70 is held by the camera holding unit 73 in a posture capable of photographing the tip of the ejection nozzle 31 and the processing liquid Lq1 ejected from the ejection nozzle 31.

移動機構33係使噴嘴基台322轉動，藉此能一邊維持噴出噴嘴31以及照相機70的位置關係一邊使噴出噴嘴31以及照相機70分別移動至處理位置以及拍攝位置。照相機70的拍攝位置與噴出噴嘴31的處理位置之間的位置關係係與處理單元1相同。The moving mechanism 33 rotates the nozzle base 322, whereby the ejection nozzle 31 and the camera 70 can be moved to the processing position and the imaging position while maintaining the positional relationship between the ejection nozzle 31 and the camera 70. The positional relationship between the imaging position of the camera 70 and the processing position of the ejection nozzle 31 is the same as that of the processing unit 1.

與處理單元1同樣地，藉由處理單元1A，照相機70亦能適當地拍攝從噴出噴嘴31噴出的略液柱狀的處理液Lq1。As with the processing unit 1, the processing unit 1A also allows the camera 70 to appropriately photograph the processing liquid Lq1 in the form of a substantially liquid column ejected from the ejection nozzle 31.

此外，由於照相機70係與噴出噴嘴31同樣地被固定至固定構件32，因此能相對於噴出噴嘴31高精度地定位照相機70。亦即，在處理單元1中，由於噴出噴嘴31以及照相機70係固定至彼此不同的噴嘴臂321、621，因此考量到移動機構33、63的精度需要於照相機70與噴嘴臂321之間設置較廣的餘裕(margin)；相對於此，在處理單元1A中，由於噴出噴嘴31以及照相機70被固定至相同的噴嘴臂321，因此能將照相機70與噴嘴臂321之間的餘裕設定成更窄。亦即，能使照相機70更接近噴嘴臂321。藉此，照相機70係能從更接近周方向的方向拍攝噴出噴嘴31。因此，容易在拍攝影像IM1中特定處理液Lq1的徑方向的噴出位置。In addition, since the camera 70 is fixed to the fixing member 32 in the same manner as the ejection nozzle 31, the camera 70 can be positioned with respect to the ejection nozzle 31 with high accuracy. That is, in the processing unit 1, since the ejection nozzle 31 and the camera 70 are fixed to different nozzle arms 321 and 621, the accuracy of the moving mechanisms 33 and 63 needs to be set between the camera 70 and the nozzle arm 321. Wide margin; In contrast, in the processing unit 1A, since the ejection nozzle 31 and the camera 70 are fixed to the same nozzle arm 321, the margin between the camera 70 and the nozzle arm 321 can be set to be narrower . That is, the camera 70 can be brought closer to the nozzle arm 321. Thereby, the camera 70 can photograph the ejection nozzle 31 from a direction closer to the circumferential direction. Therefore, it is easy to specify the ejection position of the processing liquid Lq1 in the radial direction in the captured image IM1.

[照相機保護] 在處理液Lq1包含有氫氟酸之情形中，照相機70的框體的下表面或者照相機保持部73的下表面構件734的下端面只要由耐化學性的材料所形成即可。總之，只要用以保護照相機70之保護構件74設置於照相機70的下表面側即可。作為保護構件74，能採用對於氫氟酸之化學性高之耐化學性樹脂或者金屬，該耐化學性樹脂係聚四氟乙烯(PTFE；polytetrafluoroethylene)等氟樹脂或者氯乙烯樹脂等，該金屬係不鏽鋼等。[Camera protection] In the case where the processing liquid Lq1 contains hydrofluoric acid, the lower surface of the housing of the camera 70 or the lower end surface of the lower surface member 734 of the camera holder 73 may be formed of a chemically resistant material. In short, it is only necessary that the protective member 74 for protecting the camera 70 is provided on the lower surface side of the camera 70. As the protective member 74, a chemically resistant resin or metal with high chemical resistance to hydrofluoric acid can be used. The chemically resistant resin is a fluororesin such as polytetrafluoroethylene (PTFE; polytetrafluoroethylene) or a vinyl chloride resin. The metal is Stainless steel etc.

藉此，能降低位於基板W的上方之照相機70被處理液Lq1的氣化成分腐蝕的可能性。因此，能提高照相機70的可靠性。Thereby, it is possible to reduce the possibility that the camera 70 located above the substrate W will be corroded by the vaporized components of the processing liquid Lq1. Therefore, the reliability of the camera 70 can be improved.

[對於基板之著液位置] 在上述例子中，控制部9係依據將噴出噴嘴31的位置作為基準之判定區域R2內的像素求出處理液Lq1的著液位置。亦即，求出將噴出噴嘴31的位置作為基準之著液位置，藉此監視該著液位置。此點對於例如移動機構33所致使的噴出噴嘴31的位置精度高之情形中尤其有功效。此外，亦會有移動機構33所致使的噴出噴嘴31的位置精度低之情形。因此，控制部9亦可監視將基板W的周緣的位置作為基準之處理液Lq1的著液位置。[For the substrate's writing position] In the above example, the control unit 9 obtains the impingement position of the treatment liquid Lq1 based on the pixels in the determination region R2 based on the position of the ejection nozzle 31. That is, the landing position based on the position of the ejection nozzle 31 is obtained, and the landing position is monitored. This point is particularly effective when the position accuracy of the ejection nozzle 31 is high due to the movement mechanism 33, for example. In addition, there may be cases where the position accuracy of the ejection nozzle 31 caused by the moving mechanism 33 is low. Therefore, the control unit 9 may also monitor the impingement position of the processing liquid Lq1 based on the position of the peripheral edge of the substrate W.

控制部9係特定拍攝影像IM1中的基板W的周緣的位置(以下稱為基板周緣位置)，以求出將基板W的周緣的位置作為基準之著液位置。首先，控制部9係特定拍攝影像IM1中之以下所說明的周緣區域R3(亦參照圖8)。The control unit 9 specifies the position of the periphery of the substrate W in the captured image IM1 (hereinafter referred to as the position of the periphery of the substrate), and obtains the depositing position based on the position of the periphery of the substrate W. First, the control unit 9 specifies the peripheral region R3 described below in the captured image IM1 (also refer to FIG. 8).

周緣區域R3係拍攝影像IM1中包含有基板W的周緣的一部分之區域。在圖8的例子中，周緣區域R3係具有矩形狀之形狀。與判定區域R2同樣地，周緣區域R3的位置係與噴出噴嘴31的位置對應地預先設定。亦即，預先設定了噴出噴嘴31與周緣區域R3之間的相對性的位置關係。用以顯示噴出噴嘴31與周緣區域R3之間的相對性的位置關係之資訊亦可記憶至控制部9的記憶媒體。The peripheral area R3 is an area including a part of the peripheral edge of the substrate W in the captured image IM1. In the example of FIG. 8, the peripheral region R3 has a rectangular shape. As with the determination area R2, the position of the peripheral area R3 is set in advance corresponding to the position of the ejection nozzle 31. That is, the relative positional relationship between the ejection nozzle 31 and the peripheral region R3 is set in advance. The information for displaying the relative positional relationship between the ejection nozzle 31 and the peripheral region R3 can also be stored in the storage medium of the control unit 9.

控制部9係藉由圖案匹配特定拍攝影像IM1內的噴出噴嘴31的位置，並依據所特定的噴出噴嘴31的位置特定周緣區域R3。而且，控制部9係特定周緣區域R3內的基板W的基板周緣位置。例如，控制部9係依據邊緣檢測處理等影像處理特定基板W的周緣。藉此，能特定將噴出噴嘴31的位置作為基準之基板W的基板周緣位置。The control unit 9 specifies the position of the ejection nozzle 31 in the captured image IM1 by pattern matching, and specifies the peripheral region R3 according to the position of the specified ejection nozzle 31. In addition, the control unit 9 specifies the position of the substrate peripheral edge of the substrate W in the peripheral edge region R3. For example, the control unit 9 processes the periphery of the specific substrate W based on image processing such as edge detection processing. Thereby, the position of the substrate periphery of the substrate W with the position of the ejection nozzle 31 as a reference can be specified.

如上所述，控制部9係能特定皆將噴出噴嘴31的位置作為基準之著液位置以及基板周緣位置。因此，控制部9係能依據這些位置特定將基板周緣位置作為基準之著液位置。例如，預先藉由實驗等生成成為基準的表格資訊。具體而言，在每次預先藉由控制部9的控制適當地變更噴出噴嘴31的處理位置時，使噴出噴嘴31噴出處理液Lq1並取得拍攝影像IM1。而且，在噴出噴嘴31的各個處理位置中，測定處理液Lq1的著液位置與基板W的周緣之間的距離，並特定此時的拍攝影像IM1中的基板端部位置與噴出位置之間的位置關係。而且，將所測定的距離與所特定的位置關係相互賦予對應並將這些資訊作為表格資訊預先記憶至控制部9的記憶媒體。As described above, the control unit 9 can specify the position of the liquid injection and the position of the peripheral edge of the substrate, both of which use the position of the ejection nozzle 31 as a reference. Therefore, the control unit 9 can specify the liquid depositing position based on the position of the peripheral edge of the substrate based on these positions. For example, the table information that becomes the benchmark is generated in advance through experiments. Specifically, every time the processing position of the ejection nozzle 31 is appropriately changed by the control of the control unit 9 in advance, the ejection nozzle 31 is caused to eject the processing liquid Lq1 to obtain the captured image IM1. Furthermore, in each processing position of the ejection nozzle 31, the distance between the impingement position of the processing liquid Lq1 and the periphery of the substrate W is measured, and the distance between the substrate end position and the ejection position in the captured image IM1 at this time is specified Positional relationship. Then, the measured distance and the specified positional relationship are associated with each other, and the information is stored in the storage medium of the control unit 9 in advance as table information.

控制部9係特定拍攝影像IM1內的基板周緣位置與噴出位置之間的位置關係，並依據所特定的位置關係與表格資訊算出基板W的周緣與處理液Lq1的著液位置之間的距離(亦即將基板W的周緣作為基準之著液位置)。The control unit 9 specifies the positional relationship between the peripheral edge position of the substrate and the ejection position in the captured image IM1, and calculates the distance between the peripheral edge of the substrate W and the impregnation position of the processing liquid Lq1 based on the specified positional relationship and table information ( That is, the periphery of the substrate W is used as the reference position of the liquid.

由於控制部9係能求出將基板W的周緣的位置作為基準之著液位置，因此能更適當地監視著液位置。Since the control unit 9 can obtain the landing position with the position of the peripheral edge of the substrate W as a reference, the landing position can be monitored more appropriately.

[著液位置的特定] 在上述例子中，控制部9係依據直線成分LC1與直線成分LC2之間的彎曲位置求出著液位置。然而，並未限定於此。[Specification of landing position] In the above example, the control unit 9 obtains the impregnation position based on the curved position between the linear component LC1 and the linear component LC2. However, it is not limited to this.

如圖9所例示般，二值化影像IM2的高像素值區域R4中的區域R42(相當於處理液Lq1與處理液Lq1的鏡像Lqm1之區域)係在處理液Lq1與處理液Lq1的鏡像Lqm1之間的交界B1中於橫方向擴展。此原因可認為是因為處理液Lq1著液至基板W的上表面時朝周圍稍微擴展之故。亦即，擴展部分係能視為反映處理液Lq1與處理液Lq1的鏡像Lqm1之間的交界，從而能視為反映著液位置。As illustrated in FIG. 9, the region R42 (the region corresponding to the mirror image Lqm1 of the treatment liquid Lq1 and the treatment liquid Lq1) in the high pixel value region R4 of the binary image IM2 is in the mirror image Lqm1 of the treatment liquid Lq1 and the treatment liquid Lq1 The boundary B1 between them expands in the horizontal direction. This is considered to be because the processing liquid Lq1 spreads slightly toward the periphery when it reaches the upper surface of the substrate W. That is, the extended portion can be regarded as reflecting the boundary between the treatment liquid Lq1 and the mirror image Lqm1 of the treatment liquid Lq1, and thus can be regarded as reflecting the liquid position.

因此，控制部9亦可特定在二值化影像IM2中區域R42擴展的部分，並依據擴展部分的位置求出著液位置。具體而言，控制部9亦可特定區域R42中之橫方向中位於最端部的兩點(亦即擴展部分的兩端)，並求出兩端的中心位置作為著液位置。Therefore, the control unit 9 may also specify the expanded portion of the region R42 in the binarized image IM2, and obtain the impregnation position based on the position of the expanded portion. Specifically, the control unit 9 may specify two points located at the extreme ends in the horizontal direction in the region R42 (that is, the two ends of the expanded portion), and obtain the center positions of the two ends as the impingement positions.

[拍攝光學系統] 圖11係概略性地顯示處理單元1B的構成的一例之圖。處理單元1B係除了拍攝光學系統之外，具有與處理單元1同樣的構成。在處理單元1B中設置有鏡子75。鏡子75係配置於基板W的上方的拍攝位置，且照相機70係配置於基板W的上方以外的區域。如圖11所例示般，俯視觀看時照相機70亦可位於處理罩40的上方。鏡子75係使來自拍攝區域的光線朝照相機70的受光面反射。因此，照相機70係能拍攝從基板W的上方的拍攝位置觀看的拍攝區域。[Photographing optical system] FIG. 11 is a diagram schematically showing an example of the configuration of the processing unit 1B. The processing unit 1B has the same configuration as the processing unit 1 except for the imaging optical system. A mirror 75 is provided in the processing unit 1B. The mirror 75 is arranged in an imaging position above the substrate W, and the camera 70 is arranged in an area other than the upper part of the substrate W. As illustrated in FIG. 11, the camera 70 may also be located above the processing cover 40 when viewed from above. The mirror 75 reflects the light from the shooting area toward the light-receiving surface of the camera 70. Therefore, the camera 70 can image the imaging area viewed from the imaging position above the substrate W.

如圖11所例示般，鏡子75係只要設置成可移動即可。在圖11的例子中，鏡子75係固定至處理液供給部60的固定構件62。作為更具體的例子，設置有用以保持鏡子75之鏡子保持部76，鏡子保持部76係連結至固定構件62的噴嘴臂621。例如，在鏡子保持部76的基端側中藉由緊固構件(例如螺絲)固定至噴嘴臂621的前端部，在鏡子保持部76的前端側中藉由緊固構件固定並保持鏡子75。鏡子保持部76係藉由例如金屬(例如不鏽鋼)等所形成。移動機構63係使噴嘴基台622轉動，藉此能使鏡子75在基板W的上方的拍攝位置與比處理罩40還外側的待機位置之間往復移動。移動機構63係使鏡子75移動至拍攝位置，藉此能使來自拍攝區域的光線從鏡子75朝照相機70反射。As illustrated in Fig. 11, the mirror 75 may be movable. In the example of FIG. 11, the mirror 75 is fixed to the fixing member 62 of the processing liquid supply part 60. As a more specific example, a mirror holding part 76 for holding the mirror 75 is provided, and the mirror holding part 76 is a nozzle arm 621 connected to the fixing member 62. For example, the base end side of the mirror holding portion 76 is fixed to the tip portion of the nozzle arm 621 by a fastening member (for example, a screw), and the mirror 75 is fixed and held by a fastening member on the front end side of the mirror holding portion 76. The mirror holding portion 76 is formed of, for example, metal (for example, stainless steel). The moving mechanism 63 rotates the nozzle base 622, thereby enabling the mirror 75 to reciprocate between the imaging position above the substrate W and the standby position outside the processing cover 40. The moving mechanism 63 moves the mirror 75 to the shooting position, whereby the light from the shooting area can be reflected from the mirror 75 toward the camera 70.

鏡子75的位置(拍攝位置)與噴出噴嘴31之間的俯視觀看時的位置關係係與處理單元1中的照相機70的位置(拍攝位置)與噴出噴嘴31之間的位置關係相同。拍攝位置較佳為接近基板W，亦可例如以鏡子75的反射面的下端變成與處理罩40的上端位置相同或者與處理罩40的上端位置還低的位置之方式設定拍攝位置。或者，亦可在鏡子保持部76具有配置於鏡子75的下方側之下表面構件時，以該下表面構件的下端變成與處理罩40的上端位置相同或者比處理罩40的上端位置還低的位置之方式設定拍攝位置。藉此，照相機70係能沿著更接近水平的方向拍攝從拍攝位置觀看的拍攝區域。亦即，容易使拍攝位置起的拍攝方向更沿著水平。The positional relationship between the position of the mirror 75 (imaging position) and the ejection nozzle 31 when viewed from above is the same as the positional relationship between the position of the camera 70 (imaging position) and the ejection nozzle 31 in the processing unit 1. The imaging position is preferably close to the substrate W. For example, the imaging position may be set such that the lower end of the reflective surface of the mirror 75 becomes the same as or lower than the upper end position of the processing cover 40. Alternatively, when the mirror holding portion 76 has a lower surface member arranged on the lower side of the mirror 75, the lower end of the lower surface member may be the same as or lower than the upper end position of the processing cover 40 Set the shooting position by way of position. Thereby, the camera 70 can photograph the shooting area viewed from the shooting position in a direction closer to the horizontal. That is, it is easy to make the shooting direction from the shooting position more horizontal.

依據處理單元1B，由於能將照相機70配置於基板W的上方以外的區域，因此能降低處理液Lq1對於照相機70的影響。例如，能降低處理液Lq1附著至照相機70或者降低處理液Lq1的氣化成分附著至照相機70的可能性。因此，例如即使處理液Lq1包含有氫氟酸，亦不易導致照相機70的腐蝕。According to the processing unit 1B, since the camera 70 can be arranged in an area other than the upper side of the substrate W, the influence of the processing liquid Lq1 on the camera 70 can be reduced. For example, it is possible to reduce the possibility that the processing liquid Lq1 adheres to the camera 70 or the vaporized components of the processing liquid Lq1 adhere to the camera 70. Therefore, for example, even if the processing liquid Lq1 contains hydrofluoric acid, it is unlikely to cause corrosion of the camera 70.

此外，照相機70係可在處理單元1B內以實質性無法移動之方式固定，亦可在處理單元1B內以可移動之方式固定。In addition, the camera 70 can be fixed in a substantially immovable manner in the processing unit 1B, or can be fixed in a movable manner in the processing unit 1B.

此外，鏡子75不一定需要固定至處理液供給部60的固定構件62，亦可與處理單元1A的照相機70同樣地固定至處理液供給部30的固定構件32。藉此，由於能使鏡子75更接近噴嘴臂321，因此容易使拍攝位置起的拍攝方向更沿著周方向。In addition, the mirror 75 does not necessarily need to be fixed to the fixing member 62 of the processing liquid supply section 60, and may be fixed to the fixing member 32 of the processing liquid supply section 30 in the same manner as the camera 70 of the processing unit 1A. Thereby, since the mirror 75 can be brought closer to the nozzle arm 321, it is easy to make the imaging direction from the imaging position more along the circumferential direction.

[機械學習] 在上述例子中，控制部9係對拍攝影像IM1進行影像處理，求出處理液Lq1的著液位置並判定處理液Lq1的著液位置是否位於適當的範圍內。然而，控制部9亦可使用機械學習進行判定。[Mechanical Learning] In the above example, the control unit 9 performs image processing on the captured image IM1, obtains the impingement position of the treatment liquid Lq1, and determines whether the impingement position of the treatment liquid Lq1 is within an appropriate range. However, the control unit 9 may also use machine learning to make the determination.

圖12係概略性地顯示控制部9的內部構成的一例之圖。控制部9係具備有分類器91以及機械學習部92。依序對分類器91輸入來自照相機70的拍攝影像IM1。分類器91係將被輸入的各個拍攝影像IM1分類至與噴出噴嘴31的噴出狀態量(流量或者噴出位置)相關的範疇。範疇亦可稱為類別(class)。作為範疇，能採用針對噴出狀態量有異常的範疇以及針對噴出狀態量無異常的範疇。更具體而言，能採用用以顯示針對著液位置無異常之第一範疇以及針對著液位置有異常之第二範疇。FIG. 12 is a diagram schematically showing an example of the internal structure of the control unit 9. The control unit 9 includes a classifier 91 and a machine learning unit 92. The captured images IM1 from the camera 70 are sequentially input to the classifier 91. The classifier 91 classifies each input captured image IM1 into a category related to the discharge state amount (flow rate or discharge position) of the discharge nozzle 31. The category can also be called a class. As the category, a category with an abnormality for the discharge state quantity and a category with no abnormality for the discharge state quantity can be adopted. More specifically, it is possible to use a first category for displaying that there is no abnormality for the landing position and a second category that is abnormal for the landing position.

分類器91係使用複數個教師資料並藉由機械學習部92而生成。亦即，分類器91係視為機械學習完畢的分類器。機械學習部92係使用例如鄰近法(neighbourhood method)、支援向量機(support vector machine)、隨機森林分類器(random forest)或者類神經網路(neural network)(包含有深度學習(deep learning))等作為機械學習的運算法(algorithm)。由於類神經網路係自動地生成特徵量，因此設計者無須決定特徵向量。The classifier 91 uses a plurality of teacher data and is generated by the machine learning unit 92. That is, the classifier 91 is regarded as a classifier that has been mechanically learned. The mechanical learning section 92 uses, for example, the neighborhood method, support vector machine, random forest classifier, or neural network (including deep learning) And so on as the algorithm of machine learning (algorithm). Since the neural network system automatically generates the feature quantity, the designer does not need to determine the feature vector.

教師資料係包含有影像資料以及標籤(label)，該標籤係顯示該影像資料被分類至哪個範疇。影像資料係藉由照相機70所拍攝的拍攝影像且預先生成。於各個影像資料賦予有正確的範疇作為標籤。賦予係能藉由作業者來進行。機械學習部92係依據這些教師資料進行機械學習並生成分類器91。The teacher data includes image data and a label, and the label shows which category the image data is classified into. The image data is generated in advance from the photographed image taken by the camera 70. Give each image data the correct category as a label. The assignment system can be done by the operator. The machine learning unit 92 performs machine learning based on these teacher materials and generates a classifier 91.

作為一例，說明用以藉由鄰近法分類訊框之分類器91。分類器91係具備有特徵向量抽出部911、判定部912以及記憶有判定資料庫913的記憶媒體。特徵向量抽出部911係依序被輸入有來自照相機70的拍攝影像的各個訊框。特徵向量抽出部911係依循預定的運算法抽出拍攝影像IM1的特徵向量。特徵向量係顯示了已與噴出噴嘴31的噴出狀態相應的特徵量之向量。作為運算法，能採用公知的運算法。特徵向量抽出部911係將特徵向量輸出至判定部912。As an example, a classifier 91 for classifying frames by the neighboring method is described. The classifier 91 is a storage medium that includes a feature vector extraction unit 911, a determination unit 912, and a determination database 913. The feature vector extraction unit 911 is sequentially inputted with each frame of the captured image from the camera 70. The feature vector extraction unit 911 extracts the feature vector of the captured image IM1 according to a predetermined algorithm. The feature vector system shows the vector of the feature quantity corresponding to the ejection state of the ejection nozzle 31. As the algorithm, a known algorithm can be used. The feature vector extraction unit 911 outputs the feature vector to the determination unit 912.

於判定資料庫913記憶有藉由機械學習部92從複數個教師資料所生成的複數個特徵向量(以下稱為基準向量)，該基準向量係被分類至各個範疇。具體而言，機械學習部92係針對複數個教師資料應用與特徵向量抽出部911相同的運算法並生成複數個基準向量。而且，機械學習部92係對該基準向量賦予教師資料的標籤(正確的範疇)。A plurality of feature vectors (hereinafter referred to as reference vectors) generated from a plurality of teacher data by the machine learning unit 92 are stored in the judgment database 913, and the reference vectors are classified into various categories. Specifically, the machine learning unit 92 applies the same algorithm as the feature vector extraction unit 911 to a plurality of teacher profiles, and generates a plurality of reference vectors. Furthermore, the machine learning unit 92 assigns a label (correct category) of the teacher profile to the reference vector.

判定部912係依據從特徵向量抽出部911所輸入的特徵向量以及記憶於判定資料庫913的複數個基準向量將拍攝影像IM1予以分類。例如，判定部912亦可特定特徵向量最接近的基準向量，並將拍攝影像IM1分類至所特定的基準向量的範疇(最鄰近法)。藉此，判定部912係能將被輸入至分類器91(特徵向量抽出部911)的拍攝影像分類至範疇。The determination unit 912 classifies the captured image IM1 based on the feature vector input from the feature vector extraction unit 911 and a plurality of reference vectors stored in the determination database 913. For example, the determination unit 912 may also specify the reference vector closest to the feature vector, and classify the captured image IM1 into the category of the specified reference vector (nearest neighbor method). Thereby, the determination unit 912 can classify the captured images input to the classifier 91 (the feature vector extraction unit 911) into categories.

控制部9係藉由分類器91將各個拍攝影像IM1分類至第一範疇以及第二範疇的任一個範疇。此分類係意味著正在判定處理液Lq1的著液位置是否處於適當的範圍內。由於藉由機械學習進行分類，因此能高精度地檢側異常。The control unit 9 uses the classifier 91 to classify each captured image IM1 into any one of the first category and the second category. This classification system means that it is being determined whether or not the landing position of the treatment liquid Lq1 is within an appropriate range. Since classification is performed by machine learning, side abnormalities can be detected with high accuracy.

[朝分類器的輸入] 在上述例子中，作為朝分類器91的輸入資料，雖然能採用拍攝影像IM1的整個區域，但並未限定於此。例如，控制部9亦可切出拍攝影像IM1中的判定區域R2的影像並將該影像輸入至分類器91。在此情形中，亦可採用用以顯示判定區域R2之影像作為輸入至機械學習部92的學習資料。[Input to classifier] In the above example, although the entire area of the captured image IM1 can be used as the input data to the classifier 91, it is not limited to this. For example, the control unit 9 may also cut out the image of the determination area R2 in the captured image IM1 and input the image to the classifier 91. In this case, an image for displaying the determination area R2 can also be used as the learning material input to the machine learning unit 92.

藉此，由於分類器91係能去除與噴出狀態關聯性低的區域的影響並進行分類，因此能提升分類精度。Thereby, since the classifier 91 can remove the influence of the region having low relevance to the ejection state and perform classification, the classification accuracy can be improved.

此外，為了監視將基板W的周緣作為基準之著液位置，不僅是將判定區域R2輸入至分類器91，亦可將周緣區域R3輸入至分類器91。在此情形中，亦可採用用以顯示判定區域R2以及周緣區域R3之影像作為輸入至機械學習部92的學習資料。或者，從拍攝影像IM1切出包含有判定區域R2以及周緣區域R3之矩形狀的區域並將此影像輸入至分類器91。In addition, in order to monitor the deposit position using the periphery of the substrate W as a reference, not only the determination area R2 but also the peripheral area R3 may be input to the classifier 91. In this case, it is also possible to use images for displaying the determination area R2 and the peripheral area R3 as the learning data input to the machine learning unit 92. Alternatively, a rectangular area including the determination area R2 and the peripheral area R3 is cut out from the captured image IM1, and the image is input to the classifier 91.

[伺服器] 在上述例子中，設置於基板處理裝置100的控制部9係藉由機械學習生成分類器91，並藉由分類器91分類訊框。然而，亦可於伺服器設置有控制部9所為的機械學習功能(分類器91以及機械學習部92)的至少一部分的功能。[server] In the above example, the control unit 9 provided in the substrate processing apparatus 100 generates the classifier 91 by mechanical learning, and classifies the frame by the classifier 91. However, at least a part of the machine learning function (classifier 91 and machine learning unit 92) of the control unit 9 may be provided in the server.

以上雖然已說明本基板處理裝置的實施形態，但只要未逸離本發明的精神，則除了上述說明以外亦可對本實施形態進行各種變更。上述各種實施形態以及變化例係能適當地組合並實施。Although the embodiment of the substrate processing apparatus of the present invention has been described above, as long as the spirit of the present invention is not deviated, various changes can be made to the embodiment in addition to the above description. The various embodiments and modification examples described above can be combined and implemented as appropriate.

此外，作為基板W，雖然採用半導體基板進行說明，但並未限定於此。例如，亦可採用光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display；場發射顯示器)用基板、光碟用基板、磁碟用基板或者光磁碟用基板等基板。In addition, although a semiconductor substrate is used for description as the substrate W, it is not limited to this. For example, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical discs, substrates for magnetic discs, or optical discs Substrates such as substrates.

1,1A,1B:處理單元 9:控制部(影像處理部) 10:腔室 11:側壁 12:頂壁 13:底壁 14:風扇過濾器單元 15:區隔板 20:基板保持部 21:自轉基座 21a:保持面 22:自轉馬達 23:蓋構件 24,CX:旋轉軸 26:夾具銷 30,60,65:處理液供給部 31,61,66:噴出噴嘴(噴嘴) 32,62,67:固定構件 33,63,68:移動機構 34:配管 35:開閉閥 36:倒吸閥 37:處理液供給源 40:處理罩(罩構件) 41:內罩 42:中罩 43:外罩 44:升降機構 70:照相機 71:照明部 73:照相機保持部 74:保護構件 75:鏡子 76:鏡子保持部 91:分類器 92:機械學習部 93:通報部 100:基板處理裝置 102:索引器 103:主搬運機器人 321,621,671:噴嘴臂 322,622,672:噴嘴基台 731:連結構件 732:上表面構件 733:側面構件 734:下表面構件 911:特徵向量抽出部 912:判定部 913:判定資料庫 AR34,AR64,AR69:箭頭 B1:交界 IM1:拍攝影像 IM2:二值化影像 L1,L2:直線 LC1,LC2:直線成分 Lq1:處理液 Lqm1:鏡像 R1,R41,R42:區域 R2:判定區域 R3:周緣區域 R4:高像素值區域 W:基板 θ1,θ2:角度1, 1A, 1B: processing unit 9: Control Department (Image Processing Department) 10: chamber 11: side wall 12: top wall 13: bottom wall 14: Fan filter unit 15: Zone divider 20: Board holding part 21: Rotation base 21a: Keep the face 22: Rotation motor 23: cover member 24, CX: Rotation axis 26: Fixture pin 30, 60, 65: Treatment liquid supply part 31, 61, 66: spray nozzle (nozzle) 32, 62, 67: fixed components 33, 63, 68: mobile mechanism 34: Piping 35: On-off valve 36: Back suction valve 37: Treatment liquid supply source 40: Processing cover (cover member) 41: inner cover 42: middle cover 43: outer cover 44: Lifting mechanism 70: Camera 71: Lighting Department 73: Camera holding part 74: Protective member 75: mirror 76: mirror holding part 91: classifier 92: Mechanical Learning Department 93: Notification Department 100: Substrate processing device 102: Indexer 103: Main handling robot 321,621,671: nozzle arm 322,622,672: nozzle abutment 731: connecting member 732: upper surface member 733: side member 734: lower surface member 911: Feature vector extraction part 912: Judgment Department 913: Judgment Database AR34, AR64, AR69: Arrow B1: junction IM1: Shooting images IM2: Binarized image L1, L2: straight line LC1, LC2: linear component Lq1: Treatment liquid Lqm1: mirror R1, R41, R42: area R2: Judgment area R3: peripheral area R4: High pixel value area W: substrate θ1, θ2: Angle

[圖1]係顯示基板處理裝置的構成的概略性的一例之圖。 [圖2]係顯示處理單元的構成的概略性的一例之俯視圖。 [圖3]係顯示處理單元的構成的概略性的一例之剖視圖。 [圖4]係概略性地顯示藉由照相機所取得的拍攝影像的一例之圖。 [圖5]係概略性地顯示照相機與照相機保持部的構成的一例之立體圖。 [圖6]係顯示基板處理的一例之流程圖。 [圖7]係顯示監視處理的一例之流程圖。 [圖8]係將拍攝影像的一部分放大之圖。 [圖9]係概略性地顯示二值化影像的一例之圖。 [圖10]係顯示處理單元的構成的概略性的一例之俯視圖。 [圖11]係顯示處理單元的構成的概略性的一例之俯視圖。 [圖12]係概略性地顯示控制部的內部構成的一例之功能方塊圖。[Fig. 1] A diagram showing an example of a schematic configuration of a substrate processing apparatus. [Fig. 2] A plan view showing a schematic example of the configuration of the processing unit. [Fig. 3] A cross-sectional view showing an example of a schematic configuration of the processing unit. [Fig. 4] A diagram schematically showing an example of a captured image obtained by a camera. Fig. 5 is a perspective view schematically showing an example of the configuration of the camera and the camera holding portion. [Fig. 6] is a flowchart showing an example of substrate processing. [Fig. 7] is a flowchart showing an example of monitoring processing. [Figure 8] is an enlarged view of a part of the captured image. [Fig. 9] A diagram schematically showing an example of a binary image. Fig. 10 is a plan view showing a schematic example of the configuration of the processing unit. Fig. 11 is a plan view showing a schematic example of the configuration of the processing unit. Fig. 12 is a functional block diagram schematically showing an example of the internal structure of the control unit.

1:處理單元 1: processing unit

10:腔室 10: chamber

20:基板保持部 20: Board holding part

26:夾具銷 26: Fixture pin

30,60,65:處理液供給部 30, 60, 65: Treatment liquid supply part

31,61,66:噴出噴嘴(噴嘴) 31, 61, 66: spray nozzle (nozzle)

32,62,67:固定構件 32, 62, 67: fixed components

33,63,68:移動機構 33, 63, 68: mobile mechanism

40:處理罩(罩構件) 40: Processing cover (cover member)

70:照相機 70: Camera

71:照明部 71: Lighting Department

73:照相機保持部 73: Camera holding part

321,621,671:噴嘴臂 321,621,671: nozzle arm

322,622,672:噴嘴基台 322,622,672: nozzle abutment

AR34,AR64,AR69:箭頭 AR34, AR64, AR69: Arrow

L1,L2:直線 L1, L2: straight line

W:基板 W: substrate

θ 1,θ 2:角度 θ 1,θ 2: angle

Claims (10)

一種基板處理方法，係具備有： 保持工序，係使基板保持部保持基板； 旋轉工序，係使前述基板保持部旋轉並使前述基板旋轉； 上升工序，係使用以圍繞前述基板保持部的外周之罩構件上升，並使前述罩構件的上端位於比前述基板保持部保持的前述基板的上表面還高的上端位置； 斜面處理工序，係從位於比前述上端位置還低的位置之噴嘴的噴出口朝被前述基板保持部保持的前述基板的上表面的端部噴出處理液； 拍攝工序，係使照相機拍攝從被前述基板保持部保持的前述基板的上方的拍攝位置觀看的拍攝區域並取得拍攝影像，前述拍攝區域係包含有已從前述噴嘴的前述噴出口噴出的處理液以及映照至前述基板的上表面之前述噴出液的鏡像；以及 監視工序，係依據前述拍攝影像中的前述處理液與前述鏡像監視前述處理液的著液位置。A substrate processing method, which has: The holding process is to make the substrate holding portion hold the substrate; The rotating process is to rotate the substrate holding portion and rotate the substrate; The ascending step uses the cover member surrounding the outer periphery of the substrate holding portion to rise, and the upper end of the cover member is positioned at an upper end position higher than the upper surface of the substrate held by the substrate holding portion; The slope treatment step is to spray the treatment liquid from the nozzle of the nozzle located at a position lower than the upper end position toward the end of the upper surface of the substrate held by the substrate holder; The imaging step is to allow a camera to capture an imaging area viewed from an imaging position above the substrate held by the substrate holding portion and obtain a captured image. The imaging area includes the processing liquid ejected from the nozzle of the nozzle and The mirror image of the ejected liquid reflected on the upper surface of the substrate; and The monitoring step is to monitor the impingement position of the treatment liquid based on the treatment liquid and the mirror image in the captured image. 如請求項1所記載之基板處理方法，其中在前述拍攝影像中，包含有前述處理液以及前述鏡像之整體影像係在前述處理液與前述鏡像之間的交界中彎曲； 在前述監視工序中，依據前述處理液的前述整體影像的彎曲位置求出前述著液位置。The substrate processing method according to claim 1, wherein in the photographed image, the overall image including the processing liquid and the mirror image is curved in the boundary between the processing liquid and the mirror image; In the monitoring step, the impingement position is obtained based on the bending position of the overall image of the treatment liquid. 如請求項2所記載之基板處理方法，其中在前述監視工序中，從對前述拍攝影像進行了邊緣檢測處理以及二值化處理所獲得的二值化影像檢測沿著前述處理液的噴出方向延伸的第一直線成分以及沿著前述鏡像的噴出方向延伸的第二直線成分，並求出前述第一直線成分與前述第二直線成分之間的交點作為前述彎曲位置。The substrate processing method according to claim 2, wherein in the monitoring step, the detection of the binarized image obtained from the edge detection process and the binarization process of the captured image extends along the ejection direction of the process liquid And the second linear component extending along the ejection direction of the mirror image, and the intersection between the first linear component and the second linear component is obtained as the bending position. 如請求項1至3中任一項所記載之基板處理方法，其中前述照相機的曝光時間係設定成基板旋轉一圈所需的時間以上。The substrate processing method according to any one of claims 1 to 3, wherein the exposure time of the camera is set to be longer than the time required for the substrate to rotate one revolution. 如請求項1至3中任一項所記載之基板處理方法，其中依據將在基板旋轉一圈所需的時間以上的時間內藉由照相機所取得的複數個拍攝影像予以積分或者平均所獲得的拍攝影像中的前述整體影像求出前述著液位置。The substrate processing method described in any one of claims 1 to 3, wherein the basis is obtained by integrating or averaging a plurality of photographed images obtained by the camera during the time required for the substrate to rotate one revolution or more The above-mentioned impingement position is obtained from the above-mentioned overall image in the captured image. 如請求項1至3中任一項所記載之基板處理方法，其中在前述監視工序中，特定前述拍攝影像中的前述基板的周緣的位置，並求出已將前述基板的周緣的位置作為基準的前述處理液的前述著液位置。The substrate processing method according to any one of claims 1 to 3, wherein in the monitoring step, the position of the peripheral edge of the substrate in the captured image is specified, and the position of the peripheral edge of the substrate is determined as a reference The aforementioned impingement position of the aforementioned treatment liquid. 如請求項1至3中任一項所記載之基板處理方法，其中前述監視工序係包含有下述工序：在所求出的前述著液位置不在預定的範圍內時，使通報部通報此種狀況。The substrate processing method described in any one of claims 1 to 3, wherein the monitoring step includes the following step: when the determined landing position is not within a predetermined range, the notification unit is notified of such situation. 如請求項1至3中任一項所記載之基板處理方法，其中在前述監視工序中，藉由機械學習完畢的分類器將前述拍攝影像分類成著液位置無異常的範疇以及著液位置有異常的範疇中的任一個範疇。The substrate processing method described in any one of claims 1 to 3, wherein in the aforementioned monitoring process, the aforementioned captured images are classified into categories where there is no abnormality in the imprinting position and the imprinting position is Any of the abnormal categories. 如請求項8所記載之基板處理方法，其中在前述監視工序中，從前述拍攝影像切出位於前述噴嘴的正下方且包含有前述處理液以及前述鏡像之區域，並將所切出的區域的影像輸入至前述分類器。The substrate processing method according to claim 8, wherein in the monitoring step, an area located directly under the nozzle and containing the processing liquid and the mirror image is cut out from the captured image, and the cut out area is The image is input to the aforementioned classifier. 一種基板處理裝置，係具備有： 基板保持部，係保持基板並使前述基板旋轉； 罩構件，係圍繞前述基板保持部的外周； 升降機構，係使前述罩構件上升，並使前述罩構件的上端位於比被前述基板保持部保持的前述基板的上表面還高的上端位置； 噴嘴，係具有位於比前述上端位置還低的位置之噴出口，並從前述噴出口朝被前述基板保持部保持的前述基板的上表面的端部噴出處理液； 照相機，係拍攝從被前述基板保持部保持的前述基板的上方的拍攝位置觀看的拍攝區域並取得拍攝影像，前述拍攝區域係包含有已從前述噴嘴的前述噴出口噴出的處理液以及映照至前述基板的上表面之前述噴出液的鏡像；以及 影像處理部，係依據前述拍攝影像中的前述處理液與前述鏡像監視前述處理液的著液位置。A substrate processing device is provided with: The substrate holding part holds the substrate and rotates the aforementioned substrate; The cover member surrounds the outer circumference of the aforementioned substrate holding portion; The lifting mechanism raises the cover member, and positions the upper end of the cover member at an upper end position higher than the upper surface of the substrate held by the substrate holding portion; The nozzle has an ejection port located lower than the upper end position, and ejects the processing liquid from the ejection port toward the end of the upper surface of the substrate held by the substrate holding portion; The camera captures a photographing area viewed from a photographing position above the substrate held by the substrate holder and obtains a photographed image. The photographing area includes the processing liquid ejected from the ejection port of the nozzle and the image is reflected on the A mirror image of the aforementioned sprayed liquid on the upper surface of the substrate; and The image processing unit monitors the impingement position of the processing liquid based on the processing liquid and the mirror image in the captured image.
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