TW202016367A - A crystal growth method of single crystalline silicon ingot (2) - Google Patents
A crystal growth method of single crystalline silicon ingot (2) Download PDFInfo
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Abstract
Description
本發明係關於半導體技術領域,尤其係關於一種單晶矽晶棒的長晶方法。The invention relates to the field of semiconductor technology, in particular to a method for growing single crystal silicon ingots.
隨著科技的發展、新電子產品的不斷出現,對大直徑單晶矽的需求量增長迅速。單晶矽晶體的生長方法主要包括直拉法(CZ)、區熔法(FZ)和磊晶法。直拉法、區熔法用於生長單晶矽棒材,磊晶法用於生長單晶矽薄膜。其中,直拉法生長的單晶矽主要用於半導體積體電路、二極體、磊晶片襯底、太陽能電池等,是目前最常見的單晶矽生長方法。With the development of technology and the continuous emergence of new electronic products, the demand for large-diameter single crystal silicon has grown rapidly. The growth methods of single crystal silicon crystals mainly include the Czochralski method (CZ), the zone melting method (FZ) and the epitaxial method. The Czochralski method and the zone melting method are used to grow single crystal silicon rods, and the epitaxial method is used to grow single crystal silicon thin films. Among them, the single crystal silicon grown by the Czochralski method is mainly used for semiconductor integrated circuits, diodes, epitaxial wafer substrates, solar cells, etc. It is currently the most common single crystal silicon growth method.
直拉法製備單晶矽,即在長晶爐中,使籽晶浸入容置於坩堝的矽熔體中,在轉動籽晶及坩堝的同時提拉籽晶,以在籽晶下端依次進行引晶、放肩、轉肩、等徑及收尾,獲得單晶矽晶棒。在上述過程中,實現無結晶缺陷的長晶比較困難,無法達到製造正片的品質要求的晶棒無法投入使用,因而會造成浪費,提高了生產成本。The single crystal silicon is prepared by the Czochralski method, that is, in the crystal growth furnace, the seed crystal is immersed in the silicon melt contained in the crucible, and the seed crystal is pulled while rotating the seed crystal and the crucible, so that the seed crystal is sequentially introduced at the lower end of the seed crystal Crystal, put shoulder, turn shoulder, equal diameter and finish, get single crystal silicon ingot. In the above process, it is difficult to realize the crystal growth without crystal defects, and the crystal rods that cannot meet the quality requirements for manufacturing the positive film cannot be put into use, thus causing waste and increasing production costs.
因此,有必要提出一種單晶矽晶棒的長晶方法,以解決上述問題。Therefore, it is necessary to propose a method for growing single crystal silicon ingots to solve the above problems.
在發明內容部分中引入了一系列簡化形式的概念,這將在具體實施方式部分中進一步詳細說明。本發明的發明內容部分並不意味著要試圖限定出所要求保護的技術方案的關鍵特徵和必要技術特徵,更不意味著試圖確定所要求保護的技術方案的保護範圍。A series of concepts in simplified form were introduced in the summary of the invention, which will be explained in further detail in the detailed description section. The summary of the present invention does not mean trying to define the key features and necessary technical features of the claimed technical solution, nor does it mean trying to determine the protection scope of the claimed technical solution.
針對現有技術的不足,本發明提供一種單晶矽晶棒的長晶方法,所述長晶方法依次包括等徑階段和收尾階段,其中,通過控制所述收尾階段的收尾速度和/或溫度來增加收尾段的高度,以使等徑段頂部和底部的體微缺陷(bulk micro defect,BMD)密度一致。In view of the deficiencies of the prior art, the present invention provides a method for growing a single crystal silicon ingot, the growing method includes an equal-diameter stage and a finishing stage in sequence, wherein, by controlling the finishing speed and/or temperature of the finishing stage Increase the height of the finishing section to make the density of bulk micro defects (BMD) at the top and bottom of the equal-diameter section consistent.
示例性地,所述收尾段的高度不小於所述等徑段直徑的1/3。Exemplarily, the height of the finishing section is not less than 1/3 of the diameter of the equal-diameter section.
示例性地,所述收尾速度為提拉速度。Exemplarily, the closing speed is a pulling speed.
示例性地,所述溫度為加熱器溫度。Illustratively, the temperature is the heater temperature.
示例性地,在所述收尾階段同時調整所述收尾速度和所述溫度,並即時控制所述收尾段的直徑變化。Exemplarily, the finishing speed and the temperature are adjusted simultaneously in the finishing stage, and the diameter change of the finishing section is controlled in real time.
示例性地,所述收尾速度的平均值的範圍為0.6公釐/分鐘(mm/min)-0.7mm/min。Exemplarily, the average value of the finishing speed ranges from 0.6 mm/min to 0.7 mm/min.
示例性地,在所述等徑階段之前還包括引晶階段和放肩階段。Exemplarily, before the equal-diameter stage, a seeding stage and a shoulder-releasing stage are also included.
示例性地,所述長晶方法為直拉法。Exemplarily, the crystal growth method is a Czochralski method.
本發明提供的單晶矽晶棒的長晶方法能夠避免晶棒的無謂浪費,從而提高了生產效率。The method for growing single crystal silicon ingots provided by the invention can avoid unnecessary waste of ingots, thereby improving production efficiency.
在下文的描述中,給出了大量具體的細節以便提供對本發明更為徹底的理解。然而,對於本領域技術人員而言顯而易見的是,本發明可以無需一個或多個這些細節而得以實施。在其他的例子中,為了避免與本發明發生混淆,對於本領域習知的一些技術特徵未進行描述。In the following description, a large number of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.
應當理解的是,本發明能夠以不同形式實施,而不應當解釋為局限於這裡提出的實施例。相反地,提供這些實施例將使公開徹底和完全,並且將本發明的範圍完全地傳遞給本領域技術人員。在附圖中,為了清楚,層和區的尺寸以及相對尺寸可能被誇大。自始至終相同附圖標記表示相同的元件。It should be understood that the present invention can be implemented in different forms and should not be interpreted as being limited to the embodiments presented herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals denote the same elements throughout.
應當明白,當元件或層被稱為“在...上”、“與...相鄰”、“連接到”或“耦合到”其它元件或層時,其可以直接地在其它元件或層上、與之相鄰、連接或耦合到其它元件或層,或者可以存在居間的元件或層。相反,當元件被稱為“直接在...上”、“與...直接相鄰”、“直接連接到”或“直接耦合到”其它元件或層時,則不存在居間的元件或層。應當明白,儘管可使用術語第一、 第二、第三等描述各種元件、部件、區、層和/或部分,這些元件、部件、區、層和/或部分不應當被這些術語限制。這些術語僅僅用來區分一個元件、部件、區、層或部分與另一個元件、部件、區、層或部分。因此,在不脫離本發明教導之下,下面討論的第一元件、部件、區、層或部分可表示為第二元件、部件、區、層或部分。It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer On, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or Floor. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or portions, these elements, components, regions, layers and/or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, or section discussed below can be represented as a second element, component, region, layer, or section.
空間關係術語例如“在...下”、“在...下面”、“下面的”、“在...之下”、“在...之上”、“上面的”等,在這裡可為了方便描述而被使用從而描述圖中所示的一個元件或特徵與其它元件或特徵的關係。應當明白,除了圖中所示的取向以外,空間關係術語意圖還包括使用和操作中的裝置的不同取向。例如,如果附圖中的裝置翻轉,然後,描述為“在其它元件下面”或“在其之下”或“在其下”元件或特徵將取向為在其它元件或特徵“上”。因此,示例性術語“在...下面”和“在...下”可包括上和下兩個取向。裝置可以另外地取向(旋轉90度或其它取向)並且在此使用的空間描述語相應地被解釋。Spatial relationship terms such as "below", "below", "below", "below", "above", "above", etc. It can be used here for the convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatial relationship terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, then elements or features described as "below" or "under" or "under" will be oriented "above" the other elements or features. Thus, the exemplary terms "below" and "below" can include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or other orientation) and the spatial descriptors used herein interpreted accordingly.
在此使用的術語的目的僅在於描述具體實施例並且不作為本發明的限制。在此使用時,單數形式的“一”、“一個”和“所述/該”也意圖包括複數形式,除非上下文清楚指出另外的方式。還應明白術語“組成”和/或“包括”,當在該說明書中使用時,確定所述特徵、整數、步驟、操作、元件和/或部件的存在,但不排除一個或更多其它的特徵、整數、步驟、操作、元件、部件和/或組的存在或添加。在此使用時,術語“和/或”包括相關所列專案的任何及所有組合。The terminology used herein is for describing specific embodiments only and is not intended to be a limitation of the present invention. As used herein, the singular forms "a", "an", and "said/the" are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms "composition" and/or "comprising", when used in this specification, determine the existence of the described features, integers, steps, operations, elements and/or components, but do not exclude one or more other The presence or addition of features, integers, steps, operations, elements, components, and/or groups. As used herein, the term "and/or" includes any and all combinations of the listed items.
這裡參考作為本發明的理想實施例(和中間結構)的示意圖的橫截面圖來描述發明的實施例。這樣,可以預期由於例如製造技術和/或容差導致的從所示形狀的變化。因此,本發明的實施例不應當侷限於在此所示的區的特定形狀,而是包括由於例如製造導致的形狀偏差。例如,顯示為矩形的注入區在其邊緣通常具有圓的或彎曲特徵和/或注入濃度梯度,而不是從注入區到非注入區的二元改變。同樣,通過注入形成的埋藏區可導致該埋藏區和注入進行時所經過的表面之間的區中的一些注入。因此,圖中顯示的區實質上是示意性的,它們的形狀並不意圖顯示裝置的區的實際形狀且並不意圖限定本發明的範圍。Embodiments of the invention are described herein with reference to cross-sectional views that are schematic diagrams of ideal embodiments (and intermediate structures) of the invention. In this way, a change from the shown shape due to, for example, manufacturing techniques and/or tolerances can be expected. Therefore, the embodiments of the present invention should not be limited to the specific shapes of the regions shown here, but include shape deviations due to, for example, manufacturing. For example, an implanted area shown as a rectangle generally has round or curved features and/or implant concentration gradients at its edges, rather than a binary change from the implanted area to the non-implanted area. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is proceeding. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to display the actual shape of the regions of the device and are not intended to limit the scope of the present invention.
為了徹底理解本發明,將在下列的描述中提出詳細的結構,以便闡釋本發明提出的技術方案。本發明的較佳實施例詳細描述如下,然而除了這些詳細描述外,本發明還可以具有其他實施方式。In order to thoroughly understand the present invention, detailed structures will be proposed in the following description, in order to explain the technical solutions proposed by the present invention. The preferred embodiments of the present invention are described in detail below. However, in addition to these detailed descriptions, the present invention may have other embodiments.
目前單晶矽晶棒的製備方法主要為直拉法(Czochralski method),其主要製程步驟包括引晶、放肩、等徑、收尾幾個階段。直拉法製備單晶矽的過程中,氧是矽中含量最高的雜質,在矽單晶中處於過飽和狀態。在裝置製造的熱加工過程中,矽中的氧會在缺陷處或雜質處成核生長,形成體微缺陷(bulk micro defect,BMD)。為了使後續由單晶矽晶棒切割而成的矽片符合品質要求,需要使晶棒中的BMD的密度維持穩定。然而,出於經濟成本(如用電量、用時長度等)的考量,目前一般採用的是比較急速的收尾,如第1圖所示。其結果是等徑段底部的BMD成核溫度的冷卻時間起了變化,導致該部分BMD密度不穩定,從而該部分達不到形成正片的品質要求,造成浪費。At present, the preparation method of the single crystal silicon ingot is mainly the Czochralski method, and its main process steps include seeding, shoulder laying, equal diameter, and finishing stages. In the process of preparing single crystal silicon by the Czochralski method, oxygen is the impurity with the highest content in silicon and is in a supersaturated state in the silicon single crystal. During the thermal processing of device manufacturing, oxygen in silicon will nucleate and grow at defects or impurities, forming bulk micro defects (BMD). In order to meet the quality requirements of the subsequent silicon wafers cut from single crystal silicon ingots, it is necessary to maintain the density of the BMD in the ingots to be stable. However, due to the consideration of economic costs (such as electricity consumption, length of time, etc.), the current rapid closure is generally adopted, as shown in Figure 1. As a result, the cooling time of the BMD nucleation temperature at the bottom of the equal-diameter section has changed, resulting in unstable BMD density in this part, so that this part cannot meet the quality requirements for forming positive films, resulting in waste.
針對上述問題,本發明提供一種單晶矽晶棒的長晶方法,所述長晶方法依次包括等徑階段和收尾階段,其中,通過控制所述收尾階段的收尾速度和/或溫度來增加收尾段的高度,以使等徑段的BMD成核密度維持穩定。本發明提供的單晶矽晶棒的長晶方法能夠避免晶棒的無謂浪費,從而提高了生產效率。In view of the above problems, the present invention provides a method for growing a single crystal silicon ingot, the growing method includes an equal diameter stage and a finishing stage in sequence, wherein the finishing stage is increased by controlling the finishing speed and/or temperature of the finishing stage The height of the segment is to keep the BMD nucleation density of the equal-diameter segment stable. The method for growing single crystal silicon ingots provided by the invention can avoid unnecessary waste of ingots, thereby improving production efficiency.
為了徹底理解本發明,將在下列的描述中提出詳細的結構及/或步驟,以便闡釋本發明提出的技術方案。本發明的較佳實施例詳細描述如下,然而除了這些詳細描述外,本發明還可以具有其他實施方式。In order to thoroughly understand the present invention, detailed structures and/or steps will be proposed in the following description, in order to explain the technical solution proposed by the present invention. The preferred embodiments of the present invention are described in detail below. However, in addition to these detailed descriptions, the present invention may have other embodiments.
[示例性實施例][Exemplary embodiment]
下面將參照第2圖以及第3圖,對本發明一實施方式的單晶矽晶棒的長晶方法做詳細描述。The method for growing a single crystal silicon ingot according to an embodiment of the present invention will be described in detail below with reference to FIGS. 2 and 3.
如第2圖所示,本發明提供的長晶方法依次包括等徑階段和收尾階段,其中,通過控制所述收尾階段的收尾速度和/或溫度來增加收尾段的高度,以使等徑段頂部和底部的BMD密度一致。根據本發明提供的方法,通過增加收尾段的高度,整個等徑段的BMD成核密度一致,避免由於急速收尾引起等徑段底部BMD成核密度不均勻,從而避免了晶棒的無謂浪費,提高了生產效率。As shown in FIG. 2, the method for growing crystals provided by the present invention includes an equal diameter stage and a finishing stage in sequence, wherein the height of the finishing stage is increased by controlling the finishing speed and/or temperature of the finishing stage to make the equal diameter section The BMD density at the top and bottom is the same. According to the method provided by the present invention, by increasing the height of the finishing section, the BMD nucleation density of the entire equal-diameter section is consistent, to avoid uneven BMD nucleation density at the bottom of the equal-diameter section due to rapid finishing, thereby avoiding unnecessary waste of crystal rods. Increased production efficiency.
具體地,首先提供長晶爐,並在所述長晶爐中將矽料加熱熔化為矽熔體。Specifically, a crystal growth furnace is provided first, and the silicon material is heated and melted into silicon melt in the crystal growth furnace.
如第3圖所示,所述長晶爐用於採用直拉法生長矽單晶,包括爐體301,爐體301中設有加熱裝置和提拉裝置。加熱裝置包括石英坩堝302、石墨坩堝303、加熱器304。其中,石英坩堝302用於盛放矽料,例如多晶矽。矽料在其中被加熱為矽熔體305。石墨坩堝303包裹在石英坩堝302的外側,用於在加熱過程中對石英坩堝302提供支撐,加熱器304設置在石墨坩堝303的外側。石英坩堝302上方設置有熱屏306,所述熱屏306具有下伸的環繞矽單晶307生長區域的倒錐形屏狀物,可阻斷加熱器304和高溫矽熔體305對生長的單晶矽晶棒307的直接熱輻射,降低單晶矽晶棒307的溫度。同時,熱屏還能夠使下吹的氬氣集中直接噴到生長介面附近,進一步增強單晶矽晶棒307的散熱。爐體301側壁上還設有保溫材料,例如碳氈。As shown in FIG. 3, the crystal growth furnace is used to grow a silicon single crystal by the Czochralski method, and includes a
提拉裝置包括豎直設置的籽晶軸308和坩堝軸309,籽晶軸308設置在石英坩堝302的上方,坩堝軸309設置在石墨坩堝303的底部,籽晶軸308的底部通過夾具安裝有籽晶,其頂部連接籽晶軸驅動裝置,使其能夠一邊旋轉一邊向上緩慢提拉。坩堝軸309的底部設有坩堝軸驅動裝置,使坩堝軸309能夠帶動坩堝進行旋轉。The pulling device includes a vertically arranged
在進行單晶生長時,首先在石英坩堝302中投放矽料,接著關閉長晶爐並抽真空,在長晶爐中充入保護氣體。示例性地,所述保護氣體為氬氣,其純度為99.99%以上,壓力為0.05兆帕(Mpa),流量為70公升/分鐘(L/min)。然後,打開加熱器304,加熱至熔化溫度1420℃以上,使矽料在20分鐘內全部熔化為矽熔體305。When growing a single crystal, first put silicon material in the
接著,將籽晶浸入矽熔體305中,通過籽晶軸308帶動籽晶旋轉並緩慢提拉,以使矽原子沿籽晶生長為單晶矽晶棒307。所述生長過程依次包括引晶、放肩、轉肩、等徑及收尾幾個階段。Next, the seed crystal is immersed in the
具體地,首先進行引晶階段。即當矽熔體305穩定到一定溫度後,將籽晶浸入矽熔體中,將籽晶以一定的拉速進行提升,使矽原子沿籽晶生長為一定直徑的細頸,直至細頸達到預定長度。示例性地,所述拉速範圍為1.5mm/min-2.5mm/min,細頸長度為晶棒直徑的1.2-1.4倍,細頸直徑範圍為5mm-7mm。Specifically, the seeding stage is performed first. That is, when the
當細頸達到預定長度之後,進入放肩階段,該階段所形成的錐形晶棒為晶棒的放肩段。在放肩階段中,逐漸降低溫度和拉晶速率,使晶棒直徑逐漸增大,直到晶棒直徑達到預定值。After the narrow neck reaches a predetermined length, it enters the shoulder laying stage, and the tapered ingot formed in this stage is the shoulder laying section of the ingot. In the shoulder-releasing stage, the temperature and the pulling rate are gradually reduced to gradually increase the diameter of the ingot until the diameter of the ingot reaches a predetermined value.
當單晶矽晶棒直徑達到預定值以後,進入等徑階段,該階段所形成的圓柱形晶棒為晶棒的等徑段。具體地,調整坩堝溫度、拉速、坩堝轉速和晶體轉速,穩定生長速率,使晶體直徑保持不變,一直到拉晶完畢。When the diameter of the single crystal silicon ingot reaches a predetermined value, it enters the equal-diameter stage, and the cylindrical ingot formed at this stage is the equal-diameter segment of the ingot. Specifically, the crucible temperature, pulling speed, crucible rotation speed and crystal rotation speed are adjusted to stabilize the growth rate and keep the crystal diameter unchanged until the crystal pulling is completed.
最後,進入收尾階段。收尾時,加快提升速率,同時升高矽熔體305的溫度,使晶棒直徑逐漸變小,形成一個圓錐形,最終離開液面。在該過程中,通過控制所述收尾階段的收尾速度和/或溫度來增加收尾段的高度,以使等徑段頂部和底部的BMD密度一致,避免出現由於急速收尾而造成等徑段底部的BMD密度不穩定的現象。其中,所述收尾速度為提拉速度。具體地,長晶過程晶棒的運動包含沿晶棒軸向的提拉及晶棒繞自身軸線的轉動,對應有提拉速度與轉速,所述收尾速度為其中的提拉速度。所述溫度為加熱器溫度,即通過控制加熱器304的溫度來增加收尾段的高度。最後,將完成收尾的晶棒升至上爐室冷卻一段時間後取出,即完成一次生長週期。在一個實施例中,在所述收尾階段同時調整所述收尾速度和溫度,並即時控制所述收尾段的直徑變化。示例性地,所述收尾速度的平均值的範圍為0.6mm/min-0.7mm/min,例如0.65mm/min。Finally, enter the closing stage. When finishing, speed up the lifting rate and increase the temperature of the
在一個較佳的實施例中,收尾段的高度是等徑段直徑的1/3以上。當收尾段的高度大於或等於等徑段直徑的1/3時,可以確保整個等徑段BMD成核溫度的冷卻時間沒有大的變化,從而使等徑段的BMD成核密度穩定,避免了等徑段的無謂浪費。In a preferred embodiment, the height of the finishing section is more than 1/3 of the diameter of the equal-diameter section. When the height of the finishing section is greater than or equal to 1/3 of the diameter of the equal diameter section, it can ensure that the cooling time of the BMD nucleation temperature of the entire equal diameter section does not change greatly, so that the BMD nucleation density of the equal diameter section is stable, avoiding The unnecessary waste of equal-diameter sections.
在一個實施例中,在收尾的過程中同時進行溫度控制和拉速控制,即時控制收尾段的直徑變化,直到單晶矽晶棒307末端脫離矽熔體305。可利用圖像採集裝置(如,CCD相機)採集長晶爐內單晶矽晶棒307與矽熔體305的三相交界處的圖像,然後利用電腦對圖像進行處理,得出單晶矽晶棒307的直徑並回饋回控制系統對長晶進行控制。具體地,晶體生長的過程中,在單晶矽晶棒307與矽熔體305的固液介面處由於潛熱的釋放而產生亮環。CCD相機獲取所述亮環的圖像信號,並將信號經過模數轉換後傳送至電腦系統,由電腦系統中的影像處理程式對單晶生長圖像進行處理,以獲取單晶矽晶棒307的測量直徑。In one embodiment, the temperature control and the pulling speed control are simultaneously performed during the finishing process, and the diameter change of the finishing section is immediately controlled until the end of the single
至此,完成了本發明實施例的單晶矽晶棒的長晶方法的相關步驟的介紹。可以理解的是,本實施例的單晶矽晶棒的長晶方法不僅包括上述步驟,在上述步驟之前、之中或之後還可包括其他需要的步驟,其都包括在本實施例長晶方法的範圍內。So far, the introduction of the relevant steps of the method for growing a single crystal silicon ingot according to an embodiment of the present invention is completed. It can be understood that the method for growing a single crystal silicon ingot of this embodiment not only includes the above steps, but also includes other required steps before, during or after the above steps, which are all included in the method for growing crystals of this embodiment. In the range.
本發明提供的單晶矽晶棒的長晶方法能夠避免晶棒的無謂浪費,從而提高了生產效率。The method for growing single crystal silicon ingots provided by the invention can avoid unnecessary waste of ingots, thereby improving production efficiency.
本發明已經通過上述實施例進行了說明,但應當理解的是,上述實施例只是用於舉例和說明的目的,而非意在將本發明限制於所描述的實施例範圍內。此外本領域技術人員可以理解的是,本發明並不局限於上述實施例,根據本發明的教導還可以做出更多種的變型和修改,這些變型和修改均落在本發明所要求保護的範圍以內。本發明的保護範圍由附屬的權利要求書及其等效範圍所界定。The present invention has been described through the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are only for purposes of illustration and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications fall within the scope of protection claimed by the present invention. Within range. The protection scope of the present invention is defined by the appended claims and their equivalent scope.
301:爐體301: furnace body
302:石英坩堝302: Quartz crucible
303:石墨坩堝303: Graphite crucible
304:加熱器304: Heater
305:矽熔體305: Silicon melt
306:熱屏306: Hot screen
307:矽單晶307: silicon single crystal
308:籽晶軸308: Seed axis
309:坩堝軸309: Crucible shaft
第1圖顯示習知單晶矽晶棒的長晶方法所獲得的單晶矽晶棒的示意圖。FIG. 1 shows a schematic diagram of a single crystal silicon ingot obtained by a conventional method for growing a single crystal silicon ingot.
第2圖顯示本發明一實施例所提供的單晶矽晶棒的長晶方法所獲得的單晶矽晶棒的示意圖。FIG. 2 shows a schematic diagram of a single crystal silicon ingot obtained by a method for growing a single crystal silicon ingot provided by an embodiment of the present invention.
第3圖顯示本發明一實施例所提供的單晶矽晶棒的長晶方法所使用的長晶爐的示意圖。FIG. 3 shows a schematic diagram of a crystal growth furnace used in the crystal growth method of a single crystal silicon rod provided by an embodiment of the present invention.
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