TW202012559A - Transparent electroconductive films and ink for production thereof - Google Patents

Transparent electroconductive films and ink for production thereof Download PDF

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TW202012559A
TW202012559A TW108123783A TW108123783A TW202012559A TW 202012559 A TW202012559 A TW 202012559A TW 108123783 A TW108123783 A TW 108123783A TW 108123783 A TW108123783 A TW 108123783A TW 202012559 A TW202012559 A TW 202012559A
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metal nano
substrate
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伊莉莎白 卡特納
蓋倫 D 史塔奇
范鳳茹
趙洋
陳霖葉
吳炳輝
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德商巴斯夫歐洲公司
加州大學董事會
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/10Metal compounds
    • C08K3/11Compounds containing metals of Groups 4 to 10 or Groups 14 to 16 of the Periodic system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/16Halogen-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • C08L33/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/08Homopolymers or copolymers of acrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/52Electrically conductive inks
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives

Abstract

Described is a composition (ink) comprising metal nanoobjects for preparing a transpar-ent electroconductive film.

Description

透明導電膜及用於製造其之墨水Transparent conductive film and its ink

本發明係關於適用於製備導電透明膜之組合物,製備該組合物之方法,該組合物之用途,包含導電透明膜之製品,該製品之用途及製備該製品之方法。The present invention relates to a composition suitable for preparing a conductive transparent film, a method for preparing the composition, uses of the composition, a product including a conductive transparent film, uses of the product, and a method for preparing the product.

金屬奈米物體,尤其金屬奈米線,諸如銀奈米線,通常用於製備透明導電膜。如本文所使用的術語「透明導電膜」係指(i)當施加適當的電壓時能夠允許電流流動以及(ii)根據ASTM D1003所量測在可見光區域(400-700 nm)中具有80%或更高的透光率之膜,參見例如US 8,049,333。通常,該膜佈置在基板表面上,其中該基板典型地係電絕緣體並且具有至少與透明導電膜一樣高的透光率。此類導電透明膜廣泛用於顯示器、觸摸面板、電致發光裝置、有機發光二極體、薄膜光伏電池,用作抗靜電層及電磁波屏蔽層。Metal nano-objects, especially metal nano-wires, such as silver nano-wires, are commonly used to prepare transparent conductive films. The term "transparent conductive film" as used herein refers to (i) capable of allowing current to flow when an appropriate voltage is applied and (ii) measured in accordance with ASTM D1003 in the visible light region (400-700 nm) with 80% or For films with higher light transmittance, see for example US 8,049,333. Typically, the film is arranged on the surface of a substrate, where the substrate is typically an electrical insulator and has at least as high a light transmittance as the transparent conductive film. Such conductive transparent films are widely used in displays, touch panels, electroluminescent devices, organic light-emitting diodes, thin-film photovoltaic cells, as antistatic layers and electromagnetic wave shielding layers.

典型地,此類導電透明膜藉助於濕法加工技術製備。將包含分散在載液中之金屬奈米物體的懸浮液(通常稱為墨水)藉助於濕法加工技術施加至基板表面上,從而在該表面上形成濕膜,且接著自該濕膜移除載液,使得在基板表面上形成包含金屬奈米物體之導電透明膜。由於金屬奈米物體之尺寸小,故其對膜之光學特性的影響很小,因此允許形成光學透明且導電的膜。Typically, such conductive transparent films are prepared by means of wet processing techniques. A suspension (commonly referred to as ink) containing metallic nano-objects dispersed in a carrier liquid is applied to the surface of the substrate by means of wet processing techniques, thereby forming a wet film on the surface, and then removed from the wet film The carrier liquid forms a conductive transparent film containing metal nano-objects on the surface of the substrate. Due to the small size of the metallic nano-object, its effect on the optical properties of the film is small, thus allowing the formation of optically transparent and conductive films.

遺憾的是,如銀奈米線之金屬奈米物體對化學及熱劣化非常敏感,因為與相應的塊狀金屬相比,其比表面積顯著增加。金屬奈米物體之氧化、熱破碎及聚集通常導致包含此類金屬奈米物體之導電透明膜之導電性顯著降低以及光學性質顯著下降。Unfortunately, metal nano-objects such as silver nanowires are very sensitive to chemical and thermal degradation because the specific surface area is significantly increased compared to the corresponding bulk metals. The oxidation, thermal breakage and accumulation of metallic nano-objects usually result in a significant decrease in the conductivity and optical properties of conductive transparent films containing such metallic nano-objects.

在製造包含透明導電膜之裝置(例如顯示器)期間,金屬奈米物體可以暴露於350℃或更高之溫度。此外,在其使用期間,透明導電膜可能暴露於來自環境之熱及氧化應力。在使用透明導電膜期間可能發生的高電流密度以及靜電放電可能由於釋放的熱量而導致金屬奈米物體之熱破壞及聚集及/或氧化。During the manufacture of devices (such as displays) containing transparent conductive films, metallic nano-objects may be exposed to temperatures of 350°C or higher. In addition, during its use, the transparent conductive film may be exposed to heat and oxidative stress from the environment. The high current density that may occur during the use of the transparent conductive film and electrostatic discharge may cause thermal destruction and aggregation and/or oxidation of metallic nano-objects due to the released heat.

因此,需要提高透明導電膜中金屬奈米物體對抗熱及氧化應力以及反應性化學物質如H2 S之穩定性。Therefore, there is a need to improve the stability of metal nano-objects in transparent conductive films against thermal and oxidative stress and reactive chemicals such as H 2 S.

為了解決此等問題,US 2014/0020737 A1提出一種裝置,其包含基板、設置在該基板上之銀奈米線以及塗覆在該等銀奈米線上之氧化保護層,其中該氧化保護層包含氧化物。氧化保護層藉助於原子層沈積(atomic layer deposition,ALD)方法施加。較佳地,氧化物係金屬氧化物或類金屬氧化物,其包含選自由Ti、V、Ni、Cu、Zn、Zr、Nb、Y、Al、Si、Sn及In組成之群的至少一者。由二氧化鈦TiO2 組成之保護層係較佳的。To solve these problems, US 2014/0020737 A1 proposes a device including a substrate, a silver nanowire disposed on the substrate, and an oxidation protection layer coated on the silver nanowire, wherein the oxidation protection layer includes Oxide. The oxidation protection layer is applied by means of atomic layer deposition (ALD) method. Preferably, the oxide-based metal oxide or metalloid oxide includes at least one selected from the group consisting of Ti, V, Ni, Cu, Zn, Zr, Nb, Y, Al, Si, Sn, and In . A protective layer composed of titanium dioxide TiO 2 is preferred.

原子層沈積(ALD)係一種真空技術,需要特定的昂貴的技術設備。真空技術不能容易地整合在用於製備透明導電傳導性膜之連續製程(例如,卷對卷製程(roll-to-roll-process))中。實際上,在待保護之金屬奈米物體設置在基板上之後,必須藉助於原子層沈積施加氧化保護層作為額外的處理步驟。Atomic layer deposition (ALD) is a vacuum technology that requires specific expensive technical equipment. Vacuum technology cannot be easily integrated into a continuous process (eg, roll-to-roll-process) for preparing transparent conductive conductive films. In fact, after the metal nano-object to be protected is placed on the substrate, an oxidation protection layer must be applied as an additional processing step by means of atomic layer deposition.

相關技術亦係 US 9,449,734 B2、 US 10 020 807 B2、 EP 3 101 663 A1。Related technologies US 9,449,734 B2, US 10 020 807 B2, EP 3 101 663 A1.

為了降低設備成本以及提高加工效率,期望藉助於濕法加工為金屬奈米物體提供氧化保護,該濕法加工可以與金屬奈米物體製備及墨水製備階段相結合。此外,期望提供包含金屬奈米物體之墨水,其受到保護免受氧化,從而在金屬奈米物體設置在基板上之後不需要額外的氧化保護處理步驟。In order to reduce equipment costs and improve processing efficiency, it is desirable to provide oxidation protection for metal nano-objects by means of wet processing, which can be combined with metal nano-object preparation and ink preparation stages. In addition, it is desirable to provide inks containing metal nano-objects that are protected from oxidation so that no additional oxidation protection treatment steps are required after the metal nano-objects are placed on the substrate.

本發明之一個目的係提供一種用於製備包含金屬奈米物體之透明導電膜之組合物(墨水),該等透明導電膜具有增強的抗氧化、抗熱應力及抗反應性化學物質的穩定性,從而避免此類導電透明膜之電導率降低以及光學性質下降。An object of the present invention is to provide a composition (ink) for preparing a transparent conductive film containing metal nano-objects, the transparent conductive films having enhanced stability against oxidation, thermal stress and reactive chemicals In order to avoid the decrease of conductivity and optical properties of such conductive transparent films.

根據本發明之第一態樣,提供一種組合物,其包含 (A)選自非水性極性液體之載液 (B)分散在該載液(A)中之金屬奈米物體,其中該等分散之金屬奈米物體(B)之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層 其中該等Sn(II)化合物選自可溶於其中沒有分散有金屬奈米物體之相同載液(A)中之Sn(II)化合物, 限制條件係該層不包含SnCl2 、SnBr2 及SnI2 中之任何一種。According to a first aspect of the present invention, there is provided a composition comprising (A) a carrier liquid selected from a non-aqueous polar liquid (B) a metallic nano-object dispersed in the carrier liquid (A), wherein the dispersion The surface of the metallic nano-object (B) is at least partially coated with a layer containing one or more Sn(II) compounds wherein the Sn(II) compounds are selected from the same soluble in which the metallic nano-object is not dispersed The Sn(II) compound in the carrier liquid (A) is subject to the restriction that the layer does not contain any one of SnCl 2 , SnBr 2 and SnI 2 .

本文中,根據本發明之組合物(如上所定義)亦稱為墨水。Herein, the composition according to the present invention (as defined above) is also called ink.

令人驚奇地發現,根據本發明之墨水能夠獲得導電透明膜,該等導電透明膜包含設置在基板表面上之金屬奈米物體,其中金屬奈米物體具有增強的抗氧化、抗熱應力及抗反應性化學物質之穩定性,從而避免導電性透明膜之導電性過度降低以及光學性質過度下降。此外,藉由使用根據本發明之墨水,可以緩解包含透明導電膜之製品的製備,該等透明導電膜具有增強的抗氧化、抗熱應力及抗反應性化學物質之穩定性,因為不需要在單獨的步驟中施加保護性塗層,就如在US 2014/0020737 A1之揭示內容中一樣。Surprisingly, it was found that the ink according to the present invention can obtain conductive transparent films including metal nano-objects provided on the surface of the substrate, wherein the metal nano-objects have enhanced oxidation resistance, thermal stress resistance and resistance The stability of reactive chemicals to avoid excessive decrease in conductivity and excessive decrease in optical properties of conductive transparent films. In addition, by using the ink according to the present invention, the preparation of products containing transparent conductive films that have enhanced stability against oxidation, thermal stress, and reactive chemicals can be eased because they do not need to The protective coating is applied in a separate step, as in the disclosure of US 2014/0020737 A1.

較佳地,該等金屬奈米物體(B)選自由以下組成之群:金屬奈米線、金屬奈米粒子、金屬奈米棒、金屬奈米纖維、金屬奈米薄片、金屬奈米板及金屬奈米帶及其混合物。Preferably, the metal nano objects (B) are selected from the group consisting of metal nano wires, metal nano particles, metal nano rods, metal nano fibers, metal nano flakes, metal nano plates and Metal nanobelts and their mixtures.

根據ISO/TS 27687:2008(2008年出版),術語「奈米物體」係指具有一個、兩個或三個奈米級外部尺寸,亦即尺寸在約1 nm至100 nm範圍內之一個、兩個或三個外部尺寸之物體。According to ISO/TS 27687:2008 (published in 2008), the term "nano object" refers to one, two, or three nano-level external dimensions, that is, one with dimensions in the range of about 1 nm to 100 nm, Two or three external dimensions.

根據ISO/TS 27687:2008,具有一個奈米級外部尺寸、而另外兩個外部尺寸明顯更大之奈米物體通常稱為奈米板。該一個奈米級外部尺寸對應於奈米板之厚度。兩個明顯更大的尺寸與奈米級尺寸之差異超過三倍。兩個較大的外部尺寸不一定係奈米級的。用於表示具有一個奈米級外部尺寸、而另外兩個外部尺寸明顯更大之奈米物體的另一常用術語係「奈米薄片」。According to ISO/TS 27687:2008, a nano object with one nano-level external dimension and two other external dimensions that are significantly larger is often called a nano-plate. The one nanometer external dimension corresponds to the thickness of the nanoplate. The difference between the two significantly larger sizes and the nanoscale size is more than three times. The two larger external dimensions are not necessarily nano-scale. Another commonly used term for nano objects with one nano-level external dimension and two other external dimensions that are significantly larger is "nano sheet".

根據ISO/TS 27687:2008,具有兩個相似的奈米級外部尺寸、而第三個外部尺寸明顯更大之奈米物體通常稱為奈米纖維。第三個明顯更大的尺寸與奈米級尺寸之差異超過三倍。最大的外部尺寸不一定係奈米級的。該最大外部尺寸對應於奈米纖維之長度。奈米纖維典型地具有接近圓形之橫截面。該橫截面垂直於長度延伸。因此,該兩個奈米級外部尺寸由該圓形橫截面之直徑限定。導電奈米纖維亦稱為奈米線。中空奈米纖維(不論其導電性)亦稱為奈米管。具有兩個相似的奈米級外部尺寸、而第三個外部尺寸(長度)明顯更大之剛性(亦即非可撓性)的奈米物體通常稱為奈米棒。具有兩個相似的奈米級外部尺寸、而第三個外部尺寸(長度)明顯更大、且具有垂直於長度延伸之接近矩形形狀之橫截面的奈米物體通常稱為奈米帶。According to ISO/TS 27687:2008, nano-objects with two similar nano-level external dimensions and a third external dimension that is significantly larger are commonly referred to as nano-fibers. The third significantly larger size differs from the nano-size by more than three times. The largest external dimensions are not necessarily nano-level. This maximum external dimension corresponds to the length of the nanofiber. Nanofibers typically have a nearly circular cross-section. The cross section extends perpendicular to the length. Therefore, the two nanoscale external dimensions are defined by the diameter of the circular cross-section. Conductive nanofibers are also called nanowires. Hollow nanofibers (regardless of their electrical conductivity) are also called nanotubes. Nano objects with two similar nano-level external dimensions and a third external dimension (length) with significantly greater rigidity (that is, non-flexibility) are commonly referred to as nanorods. Nano objects with two similar nano-level external dimensions, while the third external dimension (length) is significantly larger, and has a near-rectangular cross-section extending perpendicular to the length are commonly referred to as nanoribbons.

根據ISO/TS 27687:2008,具有所有三個奈米級外部尺寸之奈米物體通常稱為奈米粒子,其中該奈米物體之最長軸長度與最短軸長度之差異不超過三倍。所有三個正交外部尺寸近似等長,亦即縱橫比(最長:最短方向)接近1之奈米粒子通常稱為奈米球。According to ISO/TS 27687:2008, nano-objects with all three nano-level external dimensions are generally called nano-particles, where the difference between the longest axis length and the shortest axis length of the nano-object does not exceed three times. All three orthogonal outer dimensions are approximately equal in length, that is, nanoparticles with an aspect ratio (longest: shortest direction) close to 1 are usually called nanospheres.

術語「金屬奈米物體」意指奈米物體包含一種或多種選自由金屬及金屬合金組成之群的材料或由其組成。由於金屬能夠允許電子流動,所以設置在基板表面上之複數個此類金屬奈米物體可以形成由相鄰且重疊的能夠承載電流之奈米物體組成的導電網狀結構,限制條件係個別金屬奈米物體之間有足夠的互連(相互接觸),以便能夠沿著網狀結構內之互連金屬奈米物體傳輸電子。The term "metallic nano-object" means that the nano-object includes or consists of one or more materials selected from the group consisting of metals and metal alloys. Since metals can allow electrons to flow, a plurality of such metal nano-objects arranged on the surface of the substrate can form a conductive mesh structure composed of adjacent and overlapping nano-objects capable of carrying electric current, and the limitation is individual metal nano-objects There are enough interconnections (contacts) between the rice objects so that they can transmit electrons along the interconnected metal nano-objects within the mesh structure.

較佳地,該等金屬奈米物體包含一種或多種選自由銀、銅、鎳、金、鈀、鎢、鐵、鈷及錫組成之群的金屬及兩種或更多種該等金屬之合金或由其組成。Preferably, the metal nano-objects include one or more metals selected from the group consisting of silver, copper, nickel, gold, palladium, tungsten, iron, cobalt, and tin, and alloys of two or more of these metals Or consist of it.

最佳金屬奈米物體係金屬奈米薄片及金屬奈米線,較佳選自由銀奈米線及銅奈米線組成之群。The best metal nano-material system metal nano flakes and metal nano wires are preferably selected from the group consisting of silver nano wires and copper nano wires.

較佳地,該等金屬奈米物體係金屬奈米線,較佳係長度為10 μm至100 μm且直徑在10至200 nm範圍內之金屬奈米線。金屬奈米線之長度及直徑藉助於掃描電子顯微鏡及透射電子顯微鏡中之一種測定,較佳透射電子顯微鏡。較佳地,該等金屬奈米線包含一種或多種選自由銀、銅、鎳、金、鈀、鎢、鐵、鈷及錫組成之群的金屬及兩種或更多種該等金屬之合金或由其組成。長度為10 μm至100 μm且直徑在10至200 nm範圍內之銀奈米線及銅奈米線係最佳的,在每種情況下藉助於掃描電子顯微鏡及透射電子顯微鏡中之一種量測,較佳透射率電子顯微鏡。Preferably, the metal nanowires of the metal nanomaterial system are preferably metal nanowires with a length of 10 μm to 100 μm and a diameter in the range of 10 to 200 nm. The length and diameter of the metal nanowire are determined by one of scanning electron microscope and transmission electron microscope, preferably transmission electron microscope. Preferably, the metal nanowires include one or more metals selected from the group consisting of silver, copper, nickel, gold, palladium, tungsten, iron, cobalt, and tin, and alloys of two or more of these metals Or consist of it. Silver nanowires and copper nanowires with a length of 10 μm to 100 μm and a diameter in the range of 10 to 200 nm are the best, in each case measured by one of scanning electron microscope and transmission electron microscope , Better transmission electron microscope.

如上定義之合適的金屬奈米物體及其獲得方法係此項技術中已知的(參見例如US 7,922,787)並且可商購獲得。應注意,本發明之有利效果不受合成金屬奈米物體之任何特定技術約束。Suitable metallic nano-objects as defined above and methods of obtaining them are known in the art (see for example US 7,922,787) and are commercially available. It should be noted that the advantageous effects of the present invention are not restricted by any specific technology of synthetic metal nano-objects.

較佳地,在根據本發明之組合物中(如上所定義),如上定義之該等金屬奈米物體(B)之濃度以該組合物之總重量計在0.001重量%至10重量%範圍內,較佳在0.001至5重量%範圍內,最佳在0.002至1重量%範圍內。當金屬奈米物體(B)之重量分數太高時,金屬奈米物體不能很好地分散在墨水中。當金屬奈米物體(B)之重量分數太低時,每單位基板表面積沈積之金屬奈米物體之量可能不足以形成互連的導電網狀結構,因此此類墨水不適合製備導電膜。此外,當墨水中金屬奈米粒子(B)之重量分數低時,在形成透明導電膜之製程中必須移除之載液(A)的量相對於沈積之金屬奈米物體的量相對較大,且加工可能變得低效。Preferably, in the composition according to the invention (as defined above), the concentration of the metallic nano-objects (B) as defined above is in the range of 0.001% to 10% by weight based on the total weight of the composition , Preferably in the range of 0.001 to 5% by weight, most preferably in the range of 0.002 to 1% by weight. When the weight fraction of the metal nano-object (B) is too high, the metal nano-object cannot be well dispersed in the ink. When the weight fraction of the metal nano-object (B) is too low, the amount of metal nano-object deposited per unit surface area of the substrate may not be sufficient to form an interconnected conductive mesh structure, so this type of ink is not suitable for preparing a conductive film. In addition, when the weight fraction of metal nanoparticles (B) in the ink is low, the amount of carrier liquid (A) that must be removed in the process of forming the transparent conductive film is relatively large relative to the amount of metal nanoparticles deposited , And processing may become inefficient.

如上定義之Sn(II)化合物以及吸附在金屬奈米物體(B)表面上之任何物質不包括在金屬奈米物體(B)的上述定義之尺寸中,且不包括在金屬奈米物體(B)相對於根據本發明組合物之重量的重量分數中。The Sn(II) compound as defined above and any substance adsorbed on the surface of the metal nano-object (B) are not included in the above-defined dimensions of the metal nano-object (B) and are not included in the metal nano-object (B) ) In the weight fraction relative to the weight of the composition according to the invention.

在根據本發明之組合物中,該等分散之金屬物體之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層。In the composition according to the invention, the surfaces of the dispersed metal objects are at least partially coated with a layer containing one or more Sn(II) compounds.

術語「Sn(II)化合物」表示包含具有+2氧化態之Sn之化合物。因此,具有包含SnO2 (Sn(IV)氧化物)且不具有+2氧化態之Sn的塗層之金屬奈米物體不係如上定義之金屬奈米物體(B)。另一方面,不排除在根據本發明之組合物中金屬奈米物體之塗層包含除+2氧化態之Sn以外的+4氧化態之Sn。The term "Sn(II) compound" means a compound containing Sn having a +2 oxidation state. Therefore, a metal nano-object having a coating containing SnO 2 (Sn(IV) oxide) and not having Sn in the +2 oxidation state is not a metal nano-object (B) as defined above. On the other hand, it is not excluded that the coating of metal nano-objects in the composition according to the invention contains Sn in the +4 oxidation state in addition to Sn in the +2 oxidation state.

該等Sn(II)化合物選自可溶於其中沒有分散有金屬奈米物體之相同載液(A)中之Sn(II)化合物。該Sn(II)化合物不選自由SnCl2 、SnBr2 及SnI2 組成之群。The Sn(II) compounds are selected from Sn(II) compounds soluble in the same carrier liquid (A) in which no metallic nano-objects are dispersed. The Sn(II) compound is not selected from the group consisting of SnCl 2 , SnBr 2 and SnI 2 .

當以載液(A)及溶解之Sn(II)化合物之總重量計(其中沒有金屬奈米物體分散在載液(A)中),可以獲得包含至少0.001重量%的Sn(II)化合物溶解於該載液(A)中之溶液時,認為Sn(II)化合物可溶於選自其中沒有分散有金屬奈米物體之非水性極性液體之載液(A)中。When calculated based on the total weight of the carrier liquid (A) and the dissolved Sn(II) compound (where no metallic nano-particles are dispersed in the carrier liquid (A)), a solution containing at least 0.001% by weight of the Sn(II) compound can be obtained In the solution in the carrier liquid (A), it is considered that the Sn(II) compound is soluble in the carrier liquid (A) selected from non-aqueous polar liquids in which metallic nano-objects are not dispersed.

在根據本發明之組合物中,該等Sn(II)化合物較佳以一定的量存在,使得Sn(II)化合物中Sn(II)之總重量相對於金屬奈米物體(B)(不包括Sn(II)化合物)之重量之比在0.01%至5%範圍內,更佳在0.01%至3.9%範圍內,進一步較佳在0.1%至3.9%範圍內,又進一步較佳在1%至3.9%範圍內,最佳在2.0%至2.5%範圍內。In the composition according to the present invention, the Sn(II) compounds are preferably present in a certain amount so that the total weight of Sn(II) in the Sn(II) compound relative to the metal nano-object (B) (excluding Sn(II) compound) in a weight ratio of 0.01% to 5%, more preferably 0.01% to 3.9%, further preferably 0.1% to 3.9%, and still more preferably 1% to In the range of 3.9%, the best is in the range of 2.0% to 2.5%.

若墨水中Sn(II)之重量相對於金屬奈米物體(B)之重量太低,則利用Sn(II)化合物產生的金屬奈米物體(B)之表面塗層可能不足以達成對抗熱及氧化應力以及對抗反應性化學物質的所需保護。若墨水中Sn(II)之重量相對於金屬奈米物體(B)之重量太高,則利用Sn(II)化合物產生的金屬奈米物體之表面塗層可能變得太厚,使得使用此類墨水得到的透明導電膜之薄層電阻可能不合需要地高。If the weight of Sn(II) in the ink is too low relative to the weight of the metal nano-object (B), the surface coating of the metal nano-object (B) produced by the Sn(II) compound may not be sufficient to achieve resistance to heat and Oxidative stress and the required protection against reactive chemicals. If the weight of Sn(II) in the ink is too high relative to the weight of the metal nano-object (B), the surface coating of the metal nano-object produced by the Sn(II) compound may become too thick, making the use of such The sheet resistance of the transparent conductive film obtained by the ink may be undesirably high.

令人驚奇地發現,在根據本發明之組合物中存在Sn(II)化合物,無論其陰離子如何,可有效提高使用根據本發明之組合物製備的透明導電膜中之金屬奈米物體(B)抗氧化、抗熱應力及抗反應性化學物質的穩定性,限制條件係Sn(II)化合物滿足如上定義之準則,亦即可溶於其中沒有分散有金屬奈米物體之相同載液(A),並且不選自由SnCl2 、SnBr2 及SnI2 組成之群。Surprisingly, it was found that the presence of Sn(II) compound in the composition according to the present invention, regardless of its anion, can effectively improve the metal nano-objects (B) in the transparent conductive film prepared using the composition according to the present invention The stability of anti-oxidation, anti-thermal stress and anti-reactive chemical substances is limited by Sn(II) compounds satisfying the above-defined criteria, that is, they can be dissolved in the same carrier liquid (A) in which metal nano-objects are not dispersed , And not selected from the group consisting of SnCl 2 , SnBr 2 and SnI 2 .

較佳地,該等Sn(II)化合物係選自由2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)組成之群。Preferably, the Sn(II) compounds are selected from the group consisting of tin(II) 2-ethylhexanoate, SnF 2 , tin(II) acetone and tin(II) methanesulfonate.

根據本發明之組合物包含載液(A)。載液(A)僅係用於濕法加工的媒劑,並且不殘留在由如上定義之組合物形成的透明導電膜中。透明導電膜由墨水中在25℃及101.325 kPa下係固體之彼等成分(本文中稱為墨水之固體成分)形成。墨水之固體成分至少包含金屬奈米物體(B)。對於視情況選用之其他固體成分,請參見下文。The composition according to the invention comprises the carrier liquid (A). The carrier liquid (A) is only a vehicle for wet processing, and does not remain in the transparent conductive film formed of the composition as defined above. The transparent conductive film is formed by their solid components in the ink at 25°C and 101.325 kPa (herein referred to as solid components of the ink). The solid content of the ink contains at least a metallic nano-object (B). Please refer to the following for other solid ingredients as appropriate.

對於彼等在水存在下經受水解導致形成不溶性SnO之Sn(II)化合物而言,重要的係載液(A)選自非水性極性液體。此適用於例如Sn(II)化合物2-乙基己酸錫(II)、SnF2 及乙醯丙酮錫(II)。因此,在此種情況下,根據本發明之組合物較佳含有的水之量以載液(A)之重量計小於2重量%,或小於0.5重量%,或小於0.05重量%,較佳小於0.02重量%水。另一方面,當使用在水存在下穩定的Sn(II)化合物時,例如,甲磺酸錫(II),載液(A)可以呈非水性極性液體與水之混合物形式。For their Sn(II) compounds which undergo hydrolysis in the presence of water resulting in the formation of insoluble SnO, the important carrier liquid (A) is selected from non-aqueous polar liquids. This applies to, for example, Sn(II) compounds 2-ethylhexanoate tin(II), SnF 2 and acetylacetone tin(II). Therefore, in this case, the composition according to the present invention preferably contains less than 2% by weight of water based on the weight of the carrier liquid (A), or less than 0.5% by weight, or less than 0.05% by weight, preferably less than 0.02% by weight water. On the other hand, when a Sn(II) compound that is stable in the presence of water is used, for example, tin(II) methanesulfonate, the carrier liquid (A) may be in the form of a mixture of a non-aqueous polar liquid and water.

較佳地,該載液(A)選自具有1至5個碳原子之醇,較佳乙醇。Preferably, the carrier liquid (A) is selected from alcohols having 1 to 5 carbon atoms, preferably ethanol.

在某些較佳的情況下,根據本發明之組合物包含如上定義之成分(A)及(B),並且進一步包含(C)一種或多種黏合劑。將該等黏合劑懸浮或溶解在該載液(A)中。典型地,該等黏合劑係聚合物。該等聚合物溶解在載液(A)中或懸浮在載液(A)中。如上定義之載液(A)及溶解在其中之彼等聚合物係單相的(亦即形成單相)。基本上不溶於該載液(A)中之聚合物以乳膠(亦即膠體分散體)或懸浮的離散固體粒子(例如纖維或聚合物珠粒)形式存在於墨水中。In certain preferred cases, the composition according to the invention comprises the components (A) and (B) as defined above, and further comprises (C) one or more binders. The binders are suspended or dissolved in the carrier liquid (A). Typically, such adhesives are polymers. The polymers are dissolved in the carrier liquid (A) or suspended in the carrier liquid (A). The carrier liquid (A) as defined above and the other polymers dissolved therein are single-phase (that is, form a single phase). The polymer that is substantially insoluble in the carrier liquid (A) is present in the ink in the form of latex (ie colloidal dispersion) or suspended discrete solid particles (such as fibers or polymer beads).

在由包含一種或多種黏合劑(C)之根據本發明的墨水獲得之透明導電膜中,該等黏合劑(C)形成光學透明的連續固相(本文稱為基質)。該基質在透明導電膜內黏合並容納金屬奈米物體(B),填充該等金屬奈米物體(B)之間的空隙,為透明導電膜提供機械完整性及穩定性,並將透明導電膜黏合至基板表面上。分散在該基質內之金屬奈米物體(B)形成導電網狀結構,使得電子能夠在層內的相鄰及重疊的金屬奈米物體之間流動。In the transparent conductive film obtained from the ink according to the present invention containing one or more binders (C), these binders (C) form an optically transparent continuous solid phase (referred to herein as a matrix). The substrate adheres to and accommodates metal nano-objects (B) in the transparent conductive film, fills the gaps between the metal nano-objects (B), provides mechanical integrity and stability for the transparent conductive film, and transfers the transparent conductive film Bond to the substrate surface. The metallic nano-objects (B) dispersed in the matrix form a conductive mesh structure, so that electrons can flow between adjacent and overlapping metallic nano-objects in the layer.

較佳的黏合劑選自由以下組成之群:纖維素醚(例如羥丙基甲基纖維素、甲基纖維素、羧甲基纖維素)、結晶纖維素(尤其係奈米結晶纖維素)、聚(甲基)丙烯酸酯、丙烯酸酯及/或甲基丙烯酸酯之共聚物、苯乙烯及(甲基)丙烯酸酯之共聚物、聚苯乙烯、聚丙烯醯胺、聚乙烯醇、聚乙烯吡咯啶酮、聚苯乙烯磺酸、聚酯、聚胺酯、聚碳酸酯、明膠、丙烯酸酯-乙酸乙烯酯共聚物、聚葡萄糖及其摻合物。本文中,術語「(甲基)丙烯酸」包括「甲基丙烯酸」及「丙烯酸」。關於此類黏合劑之進一步揭示內容,參考US 2016/0225483 A1、US 2018/0134908 A1、US 2014/0255707 A1、WO 2016/023887 A1、WO 2016/023904 A1及WO 2016/023889 A1,該等文獻以引用的方式併入本文中。Preferred binders are selected from the group consisting of cellulose ethers (eg hydroxypropyl methyl cellulose, methyl cellulose, carboxymethyl cellulose), crystalline cellulose (especially nanocrystalline cellulose), Poly(meth)acrylate, copolymer of acrylate and/or methacrylate, copolymer of styrene and (meth)acrylate, polystyrene, polyacrylamide, polyvinyl alcohol, polyvinylpyrrole Pyridone, polystyrene sulfonic acid, polyester, polyurethane, polycarbonate, gelatin, acrylate-vinyl acetate copolymer, polydextrose and blends thereof. Herein, the term "(meth)acrylic acid" includes "methacrylic acid" and "acrylic acid". For further disclosure of such adhesives, please refer to US 2016/0225483 A1, US 2018/0134908 A1, US 2014/0255707 A1, WO 2016/023887 A1, WO 2016/023904 A1 and WO 2016/023889 A1. Incorporated by reference.

除了如上定義之成分(A)及(B)及視情況選用之(C)之外,根據本發明之組合物視情況包含其他成分,例如,消泡劑、流變控制劑、腐蝕抑制劑及其他助劑。典型的消泡劑、流變控制劑及腐蝕抑制劑係此項技術中已知的並且係可商購的。應理解,任何其他成分(除了根據本發明(如上定義)之組合物之如上定義之成分(A)及(B)以及視情況選用之(C))以及此類其他成分之量應以一定的方式選擇,使得可自該組合物得到的透明導電膜之導電性及光學性質不受損害。In addition to the ingredients (A) and (B) as defined above and optionally (C), the composition according to the invention optionally contains other ingredients, for example, defoamers, rheology control agents, corrosion inhibitors and Other additives. Typical defoamers, rheology control agents, and corrosion inhibitors are known in the art and are commercially available. It should be understood that the amount of any other ingredients (except for the ingredients (A) and (B) as defined above and (C) as appropriate) of the composition according to the invention (as defined above) and the amount of such other ingredients should be in a certain amount The method is selected so that the conductivity and optical properties of the transparent conductive film obtainable from the composition are not impaired.

根據本發明之第一態樣的較佳組合物係其中組合兩種或更多種如上定義之較佳特徵之組合物。The preferred composition according to the first aspect of the invention is a composition in which two or more preferred features as defined above are combined.

根據本發明之尤其較佳之組合物包含 A)載液,其選自具有1至5個碳原子之醇,較佳乙醇 (B)分散在該載液(A)中之銀奈米線及/或銅奈米線,其中該等分散之金屬奈米線(B)之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層,該一種或多種Sn(II)化合物選自由以下組成之群:2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II) 其中在該組合物中 -以該組合物之總重量計,該等金屬奈米粒子(B)之重量分數在0.001至5重量%範圍內,更佳為0.002至1重量%。 及/或 -Sn(II)化合物中Sn(II)之重量相對於金屬奈米物體之重量之比在0.01%至3.9%範圍內,更佳在2.0%至2.5%範圍內。A particularly preferred composition according to the invention comprises A) a carrier liquid selected from alcohols having 1 to 5 carbon atoms, preferably silver nanowires in which ethanol (B) is dispersed in the carrier liquid (A) and// Or copper nanowires, wherein the surfaces of the dispersed metal nanowires (B) are at least partially coated with a layer containing one or more Sn(II) compounds selected from the group consisting of Group consisting of: tin (II) 2-ethylhexanoate, SnF 2 , tin (II) acetone and tin (II) methanesulfonate in which in the composition-based on the total weight of the composition, the The weight fraction of the isometallic nanoparticles (B) is in the range of 0.001 to 5% by weight, more preferably 0.002 to 1% by weight. And/or-the ratio of the weight of Sn(II) in the Sn(II) compound to the weight of the metal nano-object is in the range of 0.01% to 3.9%, more preferably in the range of 2.0% to 2.5%.

如上定義之根據本發明之組合物適合於將該等金屬奈米物體(B)安置於基板表面上,該等金屬奈米物體(B)之表面至少部分地塗覆有包含一種或多種如上定義之Sn(II)化合物之層。因此,本發明之第二態樣係關於如上定義之根據本發明之第一態樣的組合物的用途,其用於將該等金屬奈米物體(B)安置於基板表面上,其中該等金屬奈米物體(B)之表面至少部分地塗覆有包含一種或多種如上定義之Sn(II)化合物之層。關於根據本發明之該組合物的具體及較佳特徵,參考上文在本發明之第一態樣的上下文中提供的揭示內容。The composition according to the invention as defined above is suitable for placing the metal nano-objects (B) on the surface of the substrate, the surface of the metal nano-objects (B) is at least partially coated with one or more as defined above The layer of Sn(II) compound. Therefore, the second aspect of the invention relates to the use of the composition according to the first aspect of the invention as defined above, which is used to dispose the metal nano-objects (B) on the surface of the substrate, wherein The surface of the metallic nano-object (B) is at least partially coated with a layer containing one or more Sn(II) compounds as defined above. With regard to the specific and preferred features of the composition according to the invention, reference is made to the disclosure provided above in the context of the first aspect of the invention.

根據本發明之第三態樣,提供一種用於製備組合物以便獲得包含安置在基板表面上之金屬奈米物體之導電透明膜的方法,尤其如上定義之根據本發明之第一態樣的組合物。該方法包含以下步驟 (1)提供或製備前驅體組合物,該前驅體組合物包含 (A)選自非水性極性液體之載液 (B0)分散在該載液(A)中之金屬奈米物體 (2)向該前驅體組合物中加入一種或多種Sn(II)化合物,該一種或多種Sn(II)化合物可溶於其中沒有分散有金屬奈米物體之相同載液(A)中,限制條件係該一種或多種Sn(II)化合物不包含SnCl2 、SnBr2 及SnI2 中之任何一種。According to a third aspect of the present invention, there is provided a method for preparing a composition in order to obtain a conductive transparent film comprising a metal nano-object arranged on the surface of a substrate, in particular the combination according to the first aspect of the present invention as defined above Thing. The method includes the following steps: (1) providing or preparing a precursor composition comprising (A) a carrier liquid (B0) selected from a non-aqueous polar liquid, and a metal nanoparticle dispersed in the carrier liquid (A) Object (2) Add one or more Sn(II) compounds to the precursor composition, the one or more Sn(II) compounds can be dissolved in the same carrier liquid (A) in which no metallic nano-objects are dispersed, The limiting condition is that the one or more Sn(II) compounds do not contain any of SnCl 2 , SnBr 2 and SnI 2 .

在步驟(1)中提供之前驅體組合物中,金屬奈米粒子(B0)之表面未塗覆有包含任何Sn(II)化合物之層。僅當在步驟(2)中將一種或多種Sn(II)化合物加入至前驅體組合物中時,形成包含一種或多種Sn(II)化合物之層,其至少部分地塗覆該等分散之金屬奈米物體(B0)之表面,從而形成如上定義之根據本發明之第一態樣之組合物,該組合物包含分散在載液(A)中之金屬奈米粒子(B),其中該等分散之金屬奈米物體(B)之表面至少部分塗覆有包含一種或多種如上定義之Sn(II)化合物之層。目前假設在加入前驅體組合物後立即溶解在載液(A)中之Sn(II)化合物沈澱及/或吸附在分散於載液(A)中之金屬奈米物體(B0)之表面上。In the precursor composition provided in step (1), the surface of the metal nanoparticles (B0) is not coated with a layer containing any Sn(II) compound. Only when one or more Sn(II) compounds are added to the precursor composition in step (2), a layer comprising one or more Sn(II) compounds is formed, which at least partially coats the dispersed metals The surface of the nano-object (B0), thereby forming a composition according to the first aspect of the invention as defined above, the composition comprising metallic nano-particles (B) dispersed in a carrier liquid (A), wherein these The surface of the dispersed metal nano-object (B) is at least partially coated with a layer containing one or more Sn(II) compounds as defined above. It is currently assumed that the Sn(II) compound dissolved in the carrier liquid (A) precipitates and/or adsorbs on the surface of the metal nano-object (B0) dispersed in the carrier liquid (A) immediately after adding the precursor composition.

關於選擇載液(A)之準則,以及關於較佳之載液(A),如上所揭示在本發明之第一態樣的上下文中同樣適用。The criteria for selecting the carrier liquid (A), and the preferred carrier liquid (A), as disclosed above, also apply in the context of the first aspect of the invention.

關於選擇金屬奈米物體(B0)之準則,以及關於較佳之金屬奈米物體(B0),如上關於金屬奈米物體(B)所揭示在本發明之第一態樣的上下文中同樣適用。The criteria for selecting the metallic nano-object (B0) and the preferred metallic nano-object (B0), as disclosed above for the metallic nano-object (B), also apply in the context of the first aspect of the invention.

在前驅體組合物中,該等金屬奈米粒子(B0)之重量分數以前驅體組合物之總重量計較佳在0.001重量%至10重量%範圍內,較佳在0.001至5重量%範圍內,最佳在0.002至1重量%範圍內。當前驅體組合物中金屬奈米粒子(B0)之重量分數太高時,金屬奈米粒子(B0)不能很好地分散在墨水中。當前驅體組合物中金屬奈米粒子(B0)之重量分數太低時,該方法可能變得低效。In the precursor composition, the weight fraction of the metal nanoparticles (B0) is preferably in the range of 0.001% to 10% by weight, preferably in the range of 0.001 to 5% by weight based on the total weight of the precursor composition , Preferably in the range of 0.002 to 1% by weight. When the weight fraction of the metal nanoparticles (B0) in the precursor composition is too high, the metal nanoparticles (B0) cannot be well dispersed in the ink. When the weight fraction of metal nanoparticles (B0) in the precursor composition is too low, this method may become inefficient.

在如上定義之方法的步驟(2)中,該等Sn(II)化合物的加入量相對於前驅體組合物中金屬奈米物體(B0)之重量較佳為0.02重量%至10重量%。更具體而言,在如上定義之方法的步驟(2)中,該等Sn(II)化合物較佳以一定的量加入,使得加入的Sn(II)化合物中Sn(II)之總重量相對於前驅體組合物中金屬奈米物體(B0)(不包括Sn(II)化合物)之重量之比在0.01%至5%範圍內,更佳在0.01%至3.9%範圍內,最佳在2.0%至2.5%範圍內。In step (2) of the method defined above, the amount of the Sn(II) compounds added is preferably 0.02% to 10% by weight relative to the weight of the metal nano-object (B0) in the precursor composition. More specifically, in step (2) of the method defined above, the Sn(II) compounds are preferably added in an amount such that the total weight of Sn(II) in the added Sn(II) compound is relative to The weight ratio of metal nano-objects (B0) (excluding Sn(II) compounds) in the precursor composition is in the range of 0.01% to 5%, more preferably in the range of 0.01% to 3.9%, and most preferably 2.0% To within 2.5%.

若加入的Sn(II)之重量相對於前驅體組合物中金屬奈米粒子(B0)之重量太低,則利用Sn(II)化合物產生的金屬奈米物體(B0)之表面塗層可能不足以達成對抗熱及對抗氧化應力及對抗反應性化學物質的所需保護。若加入的Sn(II)之重量相對於前驅體組合物中金屬奈米粒子(B0)之重量太高,則利用Sn(II)化合物產生的金屬奈米物體之表面塗層可能變得太厚,使得使用此類金屬奈米粒子得到的透明導電膜之薄層電阻可能不合需要地高。If the weight of the added Sn(II) is too low relative to the weight of the metal nanoparticles (B0) in the precursor composition, the surface coating of the metal nanoparticles (B0) produced by the Sn(II) compound may be insufficient To achieve the required protection against heat and oxidative stress and against reactive chemicals. If the weight of the added Sn(II) is too high relative to the weight of the metal nanoparticles (B0) in the precursor composition, the surface coating of the metal nanoobject produced by the Sn(II) compound may become too thick Therefore, the sheet resistance of the transparent conductive film obtained by using such metal nanoparticles may be undesirably high.

較佳地,在步驟(2)中,該等Sn(II)化合物以該Sn(II)化合物在與前驅體組合物之載液(A)相同之液體中的溶液形式加入至該前驅體組合物中,其中該溶液中Sn(II)之重量分數在每種情況下以該溶液之總重量計在0.001重量%至0.5重量%範圍內,較佳在0.01重量%至0.2重量%範圍內,最佳在0.01重量%至0.1重量%範圍內。最佳地,前驅體組合物之載液(A)係乙醇,並且該Sn(II)化合物以該Sn(II)化合物在乙醇中之溶液的形式加入至該前驅體組合物中,其中該溶液中Sn(II)之重量分數在每種情況下以該溶液之總重量計在0.001重量%至0.5重量%範圍內,較佳在0.01重量%至0.2重量%範圍內,最佳在0.01重量%至0.1重量%範圍內。若Sn(II)化合物係水溶性的而不水解成SnO,則可以使用Sn(II)化合物於水中之溶液。Preferably, in step (2), the Sn(II) compounds are added to the precursor combination in the form of a solution of the Sn(II) compound in the same liquid as the carrier liquid (A) of the precursor composition In which, the weight fraction of Sn(II) in the solution is in each case in the range of 0.001% to 0.5% by weight based on the total weight of the solution, preferably in the range of 0.01% to 0.2% by weight, It is most preferably in the range of 0.01% to 0.1% by weight. Optimally, the carrier liquid (A) of the precursor composition is ethanol, and the Sn(II) compound is added to the precursor composition in the form of a solution of the Sn(II) compound in ethanol, wherein the solution The weight fraction of Sn(II) in each case is in the range of 0.001% to 0.5% by weight based on the total weight of the solution, preferably in the range of 0.01% to 0.2% by weight, and most preferably 0.01% by weight To the range of 0.1% by weight. If the Sn(II) compound is water-soluble and does not hydrolyze to SnO, a solution of the Sn(II) compound in water can be used.

或者,若此類Sn(II)化合物在25℃及101.325 kPa下係液體(就像例如對於2-乙基己酸錫(II)之情況),其可以以純的形式加入至前驅體組合物中。Alternatively, if such a Sn(II) compound is liquid at 25°C and 101.325 kPa (as is the case for example with tin(II) 2-ethylhexanoate), it can be added to the precursor composition in pure form .

關於選擇Sn(II)化合物之準則,以及關於較佳的Sn(II)化合物,如上所揭示在本發明之第一態樣的上下文中同樣適用。The criteria for the selection of Sn(II) compounds, as well as the preferred Sn(II) compounds, as disclosed above, also apply in the context of the first aspect of the invention.

在步驟(2)中,在加入Sn(II)化合物之後,較佳對組合物進行機械攪拌以確保在金屬奈米物體與所加入的Sn(II)化合物之間的均勻分散。較佳地,此藉助於振動、搖動或藉由使用選自由靜態混合器及動態混合器組成之群的裝置來完成。In step (2), after the Sn(II) compound is added, the composition is preferably mechanically stirred to ensure uniform dispersion between the metal nano-object and the added Sn(II) compound. Preferably, this is done by means of vibration, shaking or by using a device selected from the group consisting of static mixers and dynamic mixers.

銀奈米線(以及其他金屬之奈米線)典型地在商業上以懸浮液的形式可獲得,其中銀奈米線之表面塗覆有一層有機保護劑以使懸浮液穩定,亦即避免銀奈米線的聚集。該有機保護劑不包含任何Sn(II)化合物。典型地,該有機保護劑選自由以下組成之群:聚乙烯吡咯啶酮、聚乙烯醇、陰離子界面活性劑(例如十二烷基硫酸鈉)、月桂胺、羥丙基纖維素及脂肪酸。因此,在根據本發明之方法的步驟(1)中提供之前驅體組合物中,金屬奈米線(B0)之表面典型地塗覆有一層有機保護劑。Silver nanowires (and nanowires of other metals) are typically commercially available in the form of suspensions, where the surface of the silver nanowires is coated with an organic protective agent to stabilize the suspension, that is, to avoid silver The gathering of nanowires. The organic protective agent does not contain any Sn(II) compounds. Typically, the organic protective agent is selected from the group consisting of polyvinylpyrrolidone, polyvinyl alcohol, anionic surfactants (such as sodium lauryl sulfate), laurylamine, hydroxypropyl cellulose and fatty acids. Therefore, in the precursor composition provided in step (1) of the method according to the present invention, the surface of the metal nanowire (B0) is typically coated with a layer of organic protective agent.

吸附在金屬奈米物體(B0)之表面上的任何物質不包括在金屬奈米物體(B0)之尺寸的定義中,且不包括在金屬奈米物體(B0)相對於前驅體組合物之重量之重量分數中。Any substance adsorbed on the surface of the metal nano-object (B0) is not included in the definition of the size of the metal nano-object (B0), and is not included in the weight of the metal nano-object (B0) relative to the precursor composition In the weight fraction.

為了便於藉由在根據本發明之方法的步驟(2)中加入的Sn(II)化合物置換該等有機保護劑,較佳使前驅體組合物中之金屬奈米線(B0)經歷預備處理,該預備處理促進吸附在金屬奈米線表面之有機保護劑經步驟(2)中加入之Sn(II)化合物至少部分置換。因此,在根據本發明之第三態樣之尤其較佳的方法中,步驟(1)包含 (1.1)提供或製備主要前驅體組合物,該主要前驅體組合物包含 (A0)載液 (B0)分散在該液體中之金屬奈米物體,其中該等分散之金屬奈米物體(B0)之表面塗覆有一層不包含任何Sn(II)化合物之有機保護劑, (1.2)藉由以下方式自該主要前驅體組合物製備前驅體組合物: 向該主要前驅體組合物中加入0.1 ml至5 ml丙酮/mg金屬奈米物體(B0)之量的丙酮,移除上清液,以及使金屬奈米物體(B0)再分散於選自非水性極性液體之新鮮載液(A)中, 視情況加入另外的載液(A)以調節該等金屬奈米物體(B0)之重量分數以前驅體組合物之總重量計在0.001重量%至10重量%範圍內,較佳在0.001至5重量%範圍內,最佳在0.002至1重量%範圍內。In order to facilitate the replacement of these organic protective agents by the Sn(II) compound added in step (2) of the method according to the present invention, it is preferable to subject the metal nanowires (B0) in the precursor composition to preliminary treatment, This preliminary treatment promotes at least partial replacement of the organic protective agent adsorbed on the surface of the metal nanowires by the Sn(II) compound added in step (2). Therefore, in a particularly preferred method according to the third aspect of the invention, step (1) includes (1.1) Provide or prepare a main precursor composition, the main precursor composition comprising (A0) Carrier fluid (B0) Metal nano-objects dispersed in the liquid, wherein the surface of the dispersed metal nano-objects (B0) is coated with an organic protective agent that does not contain any Sn(II) compound, (1.2) A precursor composition is prepared from the main precursor composition in the following manner: To this main precursor composition, add acetone in an amount of 0.1 ml to 5 ml acetone/mg metal nano-object (B0), remove the supernatant, and redisperse the metal nano-object (B0) in the In the fresh carrier liquid (A) of water-based polar liquid, Add another carrier liquid (A) as needed to adjust the weight fraction of the metal nano-objects (B0). The total weight of the precursor composition is in the range of 0.001% to 10% by weight, preferably 0.001 to 5. Within the range of% by weight, preferably within the range of 0.002 to 1% by weight.

主要前驅體溶液之載液(A0)典型地係已經進行金屬奈米物體合成之液體。在銀奈米線之情況下,該載液(A0)典型地選自多元醇,較佳選自由乙二醇、丙二醇及甘油組成之群。The carrier liquid (A0) of the main precursor solution is typically a liquid that has undergone metal nano object synthesis. In the case of silver nanowires, the carrier liquid (A0) is typically selected from polyols, preferably from the group consisting of ethylene glycol, propylene glycol and glycerin.

在如上定義之較佳方法的子步驟(1.2)中加入丙酮使金屬奈米物體沈澱。不希望受任何理論的束縛,目前假設預備處理(子步驟(1.2))促進吸附在金屬奈米線表面處之有機保護劑經步驟(2)中加入之Sn(II)化合物至少部分置換。在子步驟(1.2)中,移除主要前驅體組合物之載液(A0)並用選自非水性極性液體之新鮮載液(A)置換。藉由使前驅體組合物在3000 rpm至4000 rpm下離心2至10分鐘,可以促進自主要前驅體組合物中移除上清液。In sub-step (1.2) of the preferred method defined above, acetone is added to precipitate the metallic nano-objects. Without wishing to be bound by any theory, it is currently assumed that the preliminary treatment (substep (1.2)) promotes at least partial replacement of the organic protective agent adsorbed on the surface of the metal nanowires by the Sn(II) compound added in step (2). In sub-step (1.2), the carrier liquid (A0) of the main precursor composition is removed and replaced with a fresh carrier liquid (A) selected from non-aqueous polar liquids. By centrifuging the precursor composition at 3000 rpm to 4000 rpm for 2 to 10 minutes, the removal of the supernatant from the main precursor composition can be facilitated.

市售的銀奈米線分散體可包含來自銀奈米線製備的過量AgCl。已發現,氯陰離子對透明導電膜中銀奈米線之穩定性具有不利影響。藉由在子步驟(1.2)中加入丙酮亦會沈澱出此類過量的AgCl。在主要前驅體組合物含有氯陰離子之情況下,自該主要前驅體組合物製備前驅體組合物(步驟1.2)較佳包含以下子步驟: (1.2.1)向該主要前驅體組合物中加入0.1 ml至5 ml丙酮/mg金屬奈米物體(B0)之量的丙酮, (1.2.2)移除上清液並使金屬奈米物體(B0)再分散於選自非水性極性液體之新鮮載液(A)中, (1.2.3)加入7 mg至16 mg氨(以氫氧化銨水溶液之形式)/mg金屬奈米物體(B0)之量,且使組合物沈降1至10分鐘 (1.2.4)將步驟(1.2.3)中獲得之組合物在3000 rpm至4000 rpm下離心2至10分鐘,移除上清液並使金屬奈米物體(B0)再分散於選自非水性極性液體之新鮮載液(A)中, (1.2.5)視情況重複階段(1.2.4)1至5次 (1.2.6)視情況加入另外的載液(A)以調節該等金屬奈米物體(B0)之重量分數以前驅體組合物之總重量計在0.001重量%至10重量%範圍內,較佳在0.001重量%至5重量%範圍內,最佳在0.002至1重量%範圍內。Commercially available silver nanowire dispersions may contain excess AgCl from silver nanowire preparation. It has been found that chloride anions have an adverse effect on the stability of silver nanowires in transparent conductive films. Such excess AgCl will also be precipitated by adding acetone in substep (1.2). In the case where the main precursor composition contains chloride anions, the preparation of the precursor composition from this main precursor composition (step 1.2) preferably includes the following sub-steps: (1.2.1) Add acetone in an amount of 0.1 ml to 5 ml acetone/mg metal nano-object (B0) to the main precursor composition, (1.2.2) Remove the supernatant and redisperse the metallic nano-object (B0) in a fresh carrier liquid (A) selected from non-aqueous polar liquids, (1.2.3) Add 7 mg to 16 mg of ammonia (in the form of an aqueous solution of ammonium hydroxide)/mg of metal nano-body (B0) and allow the composition to settle for 1 to 10 minutes (1.2.4) Centrifuge the composition obtained in step (1.2.3) at 3000 rpm to 4000 rpm for 2 to 10 minutes, remove the supernatant and redisperse the metal nano-object (B0) in In the fresh carrier liquid (A) of water-based polar liquid, (1.2.5) Repeat the stage (1.2.4) 1 to 5 times as appropriate (1.2.6) Add additional carrier liquid (A) as necessary to adjust the weight fraction of the metal nano-objects (B0). The total weight of the precursor composition is in the range of 0.001% to 10% by weight. It is preferably in the range of 0.001% to 5% by weight, most preferably in the range of 0.002 to 1% by weight.

藉由在子步驟(1.2.1)中加入丙酮而沈澱之任何AgCl藉由在子步驟(1.2.3)中加入氫氧化銨而再溶解,以便可以在子步驟(1.2.4)中將其與上清液一起移除。在子步驟(1.2.3)中,氨較佳以氫氧化銨水溶液的形式加入,該氫氧化銨水溶液包含2.5重量%至5重量%的氨NH3 ,較佳約4重量%的氨。Any AgCl precipitated by adding acetone in sub-step (1.2.1) is redissolved by adding ammonium hydroxide in sub-step (1.2.3) so that it can be dissolved in sub-step (1.2.4) Remove with the supernatant. In the substep (1.2.3), ammonia is preferably added in the form of an aqueous solution of ammonium hydroxide, which contains 2.5% to 5% by weight of ammonia NH 3 , preferably about 4% by weight of ammonia.

根據本發明之第三態樣之較佳方法係其中兩種或更多種如上定義之較佳特徵組合的方法。The preferred method according to the third aspect of the present invention is a method in which two or more preferred features as defined above are combined.

根據本發明之尤其較佳的方法包含以下步驟 (1)提供前驅體組合物,該前驅體組合物包含 (A)載液,其選自具有1至5個碳原子之醇,較佳乙醇 (B0)分散在該載液(A)中之銀奈米線及/或銅奈米線,其中該等金屬奈米物體(B0)之重量分數以前驅體組合物之總重量計在0.001重量%至5重量%範圍內,更佳在0.002重量%至1%重量範圍內。 (2)向該前驅體組合物中加入一定量的一種或多種選自由2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)組成之群的Sn(II)化合物,該量使得所加入的Sn(II)化合物中Sn(II)之總重量相對於前驅體組合物中金屬奈米物體(B0)之重量之比在0.01%至3.9%範圍內,更佳在2.0%至2.5%範圍內。A particularly preferred method according to the invention comprises the following step (1) providing a precursor composition comprising (A) a carrier liquid selected from alcohols having 1 to 5 carbon atoms, preferably ethanol ( B0) Silver nanowires and/or copper nanowires dispersed in the carrier liquid (A), wherein the weight fraction of the metal nano-objects (B0) is 0.001% by weight based on the total weight of the precursor composition It is in the range of 5% by weight, more preferably in the range of 0.002% by weight to 1% by weight. (2) Add a certain amount of one or more selected from the group consisting of tin (II) 2-ethylhexanoate, SnF 2 , tin (II) acetone and tin (II) methanesulfonate to the precursor composition Group of Sn(II) compounds in an amount such that the total weight of Sn(II) in the added Sn(II) compound relative to the weight of the metal nano-object (B0) in the precursor composition is 0.01% to 3.9 % Range, more preferably in the range of 2.0% to 2.5%.

根據本發明之第四態樣,提供一種製品,其包含具有表面之基板,以及佈置在該基板之該表面上之複數個 (B)金屬奈米物體,其中該等金屬奈米物體之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層,限制條件係該層不包含SnCl2 、SnBr2 及SnI2 中之任何一種。According to a fourth aspect of the present invention, there is provided an article comprising a substrate having a surface, and a plurality of (B) metal nano-objects arranged on the surface of the substrate, wherein the surfaces of the metal nano-objects are at least Partially coated with a layer containing one or more Sn(II) compounds, with the proviso that the layer does not contain any of SnCl 2 , SnBr 2 and SnI 2 .

在該製品中,該複數個金屬奈米物體(視情況與其他物質如黏合劑組合)形成佈置在該基板表面上之透明導電膜。In the article, the plurality of metallic nano-objects (as appropriate combined with other substances such as adhesives) form a transparent conductive film arranged on the surface of the substrate.

在金屬奈米粒子(B)之表面上包含一種或多種Sn(II)化合物之該層的厚度小於10 nm,較佳小於5 nm,進一步較佳小於3 nm,最佳約1 nm,如藉由高解析度透射電子顯微鏡(high resolution transmission electron microscopy,HRTEM)量測。The thickness of the layer containing one or more Sn(II) compounds on the surface of the metal nanoparticles (B) is less than 10 nm, preferably less than 5 nm, further preferably less than 3 nm, and most preferably about 1 nm, such as Measured by high resolution transmission electron microscopy (HRTEM).

關於選擇金屬奈米物體(B)之準則,以及關於較佳的金屬奈米物體(B),如上關於金屬奈米物體(B)所揭示在本發明之第一態樣之上下文中同樣適用。The criteria for selecting the metallic nano-object (B) and the preferred metallic nano-object (B), as disclosed above for the metallic nano-object (B), are also applicable in the context of the first aspect of the invention.

在根據本發明之製品之透明導電膜中,該(等)Sn(II)化合物較佳以一定的量存在,使得Sn(II)化合物中Sn(II)之總重量相對於金屬奈米物體(B)(不包括Sn(II)化合物)之重量之比在0.01%至5%範圍內,更佳在0.01%至3.9%範圍內,更佳在2.0%至2.5%範圍內。若Sn(II)之重量相對於金屬奈米物體(B)之重量太低,則利用Sn(II)化合物產生的金屬奈米物體(B)之表面塗層可能不足以達成對抗熱及氧化應力以及對抗反應性化學物質的所需保護。。若Sn(II)之重量相對於金屬奈米物體(B)之重量太高,則利用Sn(II)化合物產生的金屬奈米物體(B)之表面塗層可能變得太厚,因此,含有此類金屬奈米物體之透明導電膜之薄層電阻可能不合需要地高。In the transparent conductive film of the product according to the present invention, the (equal) Sn(II) compound is preferably present in a certain amount, so that the total weight of Sn(II) in the Sn(II) compound is relative to the metal nano-object ( B) (Excluding Sn(II) compound) The weight ratio is in the range of 0.01% to 5%, more preferably in the range of 0.01% to 3.9%, more preferably in the range of 2.0% to 2.5%. If the weight of Sn(II) is too low relative to the weight of metallic nano-object (B), the surface coating of metallic nano-object (B) produced by Sn(II) compound may not be sufficient to achieve resistance to thermal and oxidative stress And the necessary protection against reactive chemicals. . If the weight of Sn(II) is too high relative to the weight of the metal nano-object (B), the surface coating of the metal nano-object (B) produced by the Sn(II) compound may become too thick, therefore, contains The sheet resistance of the transparent conductive film of such metal nano-objects may be undesirably high.

令人驚奇地發現(如下面呈現的實施例所證明的),在根據本發明之製品中存在Sn(II)化合物,無論其陰離子如何,可有效增強透明導電膜中之金屬奈米物體(B)抗氧化、抗熱應力及抗反應性化學物質的穩定性,限制條件係Sn(II)化合物不選自由SnCl2 、SnBr2 及SnI2 組成之群。It has surprisingly been found (as demonstrated by the examples presented below) that the presence of Sn(II) compounds in the articles according to the invention, regardless of their anions, can effectively enhance the metal nano-objects (B ) The stability of anti-oxidation, anti-thermal stress and anti-reactive chemicals is limited by the fact that Sn(II) compounds are not selected from the group consisting of SnCl 2 , SnBr 2 and SnI 2 .

Sn(II)化合物較佳選自由以下組成之群:2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)、甲磺酸錫(II)及SnO。藉由在表面至少部分塗覆有包含2-乙基己酸錫(II)之層的金屬奈米物體經歷退火處理(詳見下文)時進行煅燒,或藉由水解Sn(II)化合物(例如2乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)、甲磺酸錫(II)),可以自Sn(II)化合物(例如2-乙基己酸錫(II))獲得SnO。The Sn(II) compound is preferably selected from the group consisting of tin (II) 2-ethylhexanoate, SnF 2 , tin (II) acetone, tin (II) methanesulfonate, and SnO. By calcining the metal nano-objects at least partially coated with a layer containing tin (II) 2-ethylhexanoate under annealing (see below for details), or by hydrolyzing Sn(II) compounds (eg 2 tin(II) ethylhexanoate, SnF 2 , tin(II) acetone, tin(II) methanesulfonate), can be selected from Sn(II) compounds (eg tin(II) 2-ethylhexanoate) Get SnO.

該基板較佳包含選自由以下組成之群的材料:塑膠、玻璃、金屬、矽及藍寶石。該基板較佳呈選自由箔、膜、幅材、薄板及板組成之群的形式。較佳地,該基板之厚度在10 μm至200 μm範圍內,較佳在50 μm至100 μm範圍內。在特定情況下,該基板包含選自由玻璃及有機聚合物組成之群的光學透明材料,其係電子絕緣的。The substrate preferably includes a material selected from the group consisting of plastic, glass, metal, silicon, and sapphire. The substrate is preferably in the form selected from the group consisting of foils, films, webs, sheets and plates. Preferably, the thickness of the substrate is in the range of 10 μm to 200 μm, preferably in the range of 50 μm to 100 μm. In certain cases, the substrate includes an optically transparent material selected from the group consisting of glass and organic polymers, which is electrically insulating.

較佳的玻璃類型例如係浮法玻璃、低鐵浮法玻璃、熱強化玻璃及化學強化玻璃。視情況,玻璃在背向上述透明導電膜之表面上具有低發射率(低輻射)塗層、防曬塗層或任何其他塗層。Preferred glass types are, for example, float glass, low-iron float glass, thermally strengthened glass, and chemically strengthened glass. As the case may be, the glass has a low-emissivity (low-emission) coating, a sunscreen coating, or any other coating on the surface facing away from the transparent conductive film.

較佳的有機聚合物選自由以下組成之群:聚甲基丙烯酸甲酯(PMMA,市售,例如Plexiglas )、聚碳酸酯(PC)、聚乙烯(PE)、低密度聚乙烯(LDPE)、線性低密度聚乙烯(LLDPE)、聚丙烯(PP)、低密度聚丙烯(LDPP)、聚對苯二甲酸乙二酯(PET)、乙二醇改質的聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯(PEN)、乙酸丁酸纖維素、聚丙交酯(PL)、聚苯乙烯(PS)、聚氯乙烯(PVC)、聚醯亞胺(PI)、聚環氧丙烷(PPO)及其混合物。PET及PEN係尤其較佳的。Preferred organic polymers are selected from the group consisting of polymethyl methacrylate (PMMA, commercially available, such as Plexiglas ), polycarbonate (PC), polyethylene (PE), and low density polyethylene (LDPE) , Linear low density polyethylene (LLDPE), polypropylene (PP), low density polypropylene (LDPP), polyethylene terephthalate (PET), ethylene glycol modified polyethylene terephthalate , Polyethylene naphthalate (PEN), cellulose acetate butyrate, polylactide (PL), polystyrene (PS), polyvinyl chloride (PVC), polyimide (PI), polyepoxy Propane (PPO) and its mixtures. PET and PEN systems are particularly preferred.

較佳地,該基板之透光率為80%或更高,更佳為90%或更高,進一步較佳為95%或更高,在每種情況下根據2013年11月出版之ASTM D1003(程序A)量測。Preferably, the light transmittance of the substrate is 80% or higher, more preferably 90% or higher, further preferably 95% or higher, in each case according to ASTM D1003 published in November 2013 (Procedure A) Measurement.

較佳地,根據本發明之該製品之薄層電阻在10歐姆/平方至150歐姆/平方範圍內,如藉助於置放在安置在基板表面上之該複數個金屬奈米物體(B)上的四點探針在25℃之溫度及101.3 kPa之壓力下所量測。Preferably, the sheet resistance of the article according to the invention is in the range of 10 ohms/square to 150 ohms/square, such as by placing on the plurality of metallic nano-objects (B) placed on the surface of the substrate The four-point probe is measured at a temperature of 25°C and a pressure of 101.3 kPa.

薄層電阻(有時亦稱為「方塊電阻」)係薄體(薄片,亦即厚度均勻)之電阻的量度。如本文所述之透明導電膜可以視為係此類片狀薄體。術語「薄層電阻」意指電流係沿著薄片之平面,而非垂直於薄片之平面。對於具有厚度t、長度L及寬度W之薄片,電阻R為

Figure 02_image001
其中Rsh 係薄層電阻。因此,薄層電阻Rsh
Figure 02_image003
在上面給出之公式中,體電阻R乘以無量綱量(W/L)以獲得薄層電阻Rsh ,因此薄層電阻之單位係歐姆。為了避免與體電阻R混淆,薄層電阻值通常表示為「每平方歐姆」(歐姆/平方),因為在正方形薄片之特定情況下,W = L且R = Rsh 。薄層電阻係藉助於置放於該透明導電薄膜上之四點探針量測的,該透明導電薄膜包含安置在基板表面上之該複數個金屬奈米物體(B)。Sheet resistance (sometimes referred to as "square resistance") is a measure of the resistance of a thin body (thin sheet, that is, of uniform thickness). The transparent conductive film as described herein can be regarded as such a sheet-like thin body. The term "sheet resistance" means that the current flows along the plane of the sheet, rather than perpendicular to the plane of the sheet. For a sheet with thickness t, length L and width W, the resistance R is
Figure 02_image001
Where R sh is the sheet resistance. Therefore, the sheet resistance R sh
Figure 02_image003
In the formula given above, the volume resistance R is multiplied by the dimensionless quantity (W/L) to obtain the sheet resistance R sh , so the unit of the sheet resistance is ohms. To avoid confusion with the bulk resistance R, the sheet resistance value is usually expressed as "ohms per square" (ohm/square), because in the specific case of a square sheet, W = L and R = R sh . The sheet resistance is measured by means of a four-point probe placed on the transparent conductive film, which contains the plurality of metallic nano-objects (B) placed on the surface of the substrate.

進一步較佳地,根據本發明之該製品具有 -80%或更高的透光率,如根據ASTM D1003(程序A)所量測 及/或 -3%或更低的霧度,如根據ASTM D1003(程序A)所量測。Further preferably, the article according to the invention has -80% or higher light transmittance, as measured according to ASTM D1003 (Procedure A) And/or -Haze of 3% or less, as measured according to ASTM D1003 (Procedure A).

藉助於霧度計對霧度及透光率之量測在2013年11月出版之ASTM-D1003中定義為「程序A-霧度計」。在本發明之上下文中給出之霧度及透光率值係指此程序。The measurement of haze and light transmittance by means of a haze meter is defined as "Procedure A-Haze Meter" in ASTM-D1003 published in November 2013. The haze and light transmittance values given in the context of the present invention refer to this procedure.

參數「透光率」係指透過介質(在根據本發明之製品的情況下透過基板及安置在基板上之透明導電膜)之入射光的百分比。在2013年11月出版之ASTM D1003中,透光率稱為光透射比,其係由主體透射之光通量與入射在主體上之光通量之比。The parameter "transmittance" refers to the percentage of incident light that passes through the medium (in the case of the article according to the invention, through the substrate and the transparent conductive film disposed on the substrate). In ASTM D1003 published in November 2013, the light transmittance is called the light transmittance, which is the ratio of the light flux transmitted by the body to the light flux incident on the body.

較佳地,根據本發明之製品的透光率(對應於2013年11月出版之ASTM D1003中定義之光透射比)為85%或更高,更佳為90%或更高,進一步較佳為95%或更高,在每種情況下根據2013年11月出版之ASTM D1003(程序A)量測(對應於2013年11月出版之ASTM D1003中定義的光透射比)。Preferably, the light transmittance of the article according to the present invention (corresponding to the light transmittance defined in ASTM D1003 published in November 2013) is 85% or higher, more preferably 90% or higher, and further preferred 95% or higher, measured in each case according to ASTM D1003 (Procedure A) published in November 2013 (corresponding to the light transmittance defined in ASTM D1003 published in November 2013).

通常,參數霧度係光漫射之指數。其係指與入射光分離並在透射期間散射之光量的百分比。與透光率不同,透光率在很大程度上在於介質的性質,霧度通常係生產問題,並且典型地由表面粗糙度及介質中嵌入之粒子或組成不均勻性引起。Generally, the parameter haze is the index of light diffusion. It refers to the percentage of the amount of light that is separated from the incident light and scattered during transmission. Unlike light transmittance, light transmittance is largely due to the nature of the medium. Haze is usually a production problem and is typically caused by surface roughness and unevenness of particles or composition embedded in the medium.

根據2013年11月出版之ASTM D1003,霧度係樣本之光散射,造成經由該樣本觀察之物體的對比度降低,亦即散射使其方向距離入射光束的方向偏差超過一個特定的角度(2.5°)之透射光的百分比。According to ASTM D1003 published in November 2013, haze is the light scattering of the sample, which causes the contrast of the object observed through the sample to be reduced, that is, the scattering causes the direction to deviate from the direction of the incident beam by more than a specific angle (2.5°) The percentage of transmitted light.

較佳地,根據本發明之製品之霧度為1.8%或更低,更佳為1.5%或更低,進一步較佳為1%或更低,在每種情況下根據2013年11月出版之ASTM D1003(程序A)量測。Preferably, the haze of the product according to the invention is 1.8% or less, more preferably 1.5% or less, further preferably 1% or less, in each case according to the publication in November 2013 ASTM D1003 (Procedure A) measurement.

進一步較佳地,根據本發明之該製品(如上所定義)表現出一個或多個以下特徵:Further preferably, the article according to the invention (as defined above) exhibits one or more of the following characteristics:

-薄層電阻在10歐姆/平方至60歐姆/平方範圍內,如藉由安置在基板表面上之該複數個金屬奈米物體(B)上之四點探針所量測。-The sheet resistance is in the range of 10 ohms/square to 60 ohms/square, as measured by a four-point probe on the plurality of metallic nano-objects (B) placed on the surface of the substrate.

-霧度為3%或更低,如根據2013年11月出版之ASTM D1003(程序A)所量測,-Haze is 3% or less, as measured according to ASTM D1003 (Procedure A) published in November 2013,

-透光率為90%或更高,如根據2013年11月出版之ASTM D1003(程序A)所量測。-The light transmittance is 90% or higher, as measured according to ASTM D1003 (Procedure A) published in November 2013.

較佳地,在根據本發明之製品中,該複數個金屬奈米物體(B)對該基板表面之覆蓋率在10%至65%範圍內,較佳在15%至35%範圍內。為了計算覆蓋率,藉由光學顯微鏡或掃描電子顯微鏡拍攝其上安置有該複數個金屬奈米物體之表面的影像,並且藉助於影像分析軟體來分析影像,該影像分析軟體能夠區分該等影像內的該等金屬奈米物體(B)與基板之裸露表面,並計算由金屬奈米物體(B)覆蓋之表面的分率。Preferably, in the article according to the present invention, the coverage of the plurality of metal nano-objects (B) on the substrate surface is in the range of 10% to 65%, preferably in the range of 15% to 35%. In order to calculate the coverage rate, an image of the surface on which the plurality of metal nano-objects are placed is taken by an optical microscope or a scanning electron microscope, and the image is analyzed with the help of image analysis software, which can distinguish between the images The exposed surface of the metal nano-object (B) and the substrate, and calculate the fraction of the surface covered by the metal nano-object (B).

較佳地,在根據本發明之製品中,該等金屬奈米物體(B)以1 mg/m2 至1000 mg/m2 、較佳5 mg/m2 至200 mg/m2 、最佳20 mg/m2 至50 mg/m2 的濃度存在於該基板之該表面上。Preferably, in the product according to the present invention, the metal nano-objects (B) are 1 mg/m 2 to 1000 mg/m 2 , preferably 5 mg/m 2 to 200 mg/m 2 , most preferably A concentration of 20 mg/m 2 to 50 mg/m 2 exists on the surface of the substrate.

在根據本發明之尤其較佳的製品中,該複數種金屬奈米線(B)摻入由一種或多種如上定義之黏合劑(C)形成之光學透明基質中。因此,該較佳製品包含具有表面的基板,及佈置在該基板之該表面上之複數個如上定義之金屬奈米物體(B),並且該製品在該基板之該表面上進一步包含一種或多種如上定義之黏合劑(C)。金屬奈米物體(B)分散在由該等黏合劑形成之該基質中。該基質黏合並容納透明導電膜中之金屬奈米物體(B),填充該等金屬奈米物體之間的空隙,為透明導電膜提供機械完整性及穩定性,並將透明導電膜黏合至基板表面上。In a particularly preferred article according to the invention, the plurality of metallic nanowires (B) are incorporated into an optically transparent matrix formed of one or more binders (C) as defined above. Therefore, the preferred article includes a substrate having a surface, and a plurality of metallic nano-objects (B) as defined above arranged on the surface of the substrate, and the article further includes one or more on the surface of the substrate Adhesive (C) as defined above. The metallic nano-object (B) is dispersed in the matrix formed by the binders. The substrate adheres and accommodates the metal nano-objects (B) in the transparent conductive film, fills the gaps between the metal nano-objects, provides mechanical integrity and stability for the transparent conductive film, and bonds the transparent conductive film to the substrate On the surface.

關於選擇黏合劑之準則及關於較佳的黏合劑,如上所揭示在本發明之第一態樣的上下文中同樣適用。The selection criteria for adhesives and the preferred adhesives, as disclosed above, also apply in the context of the first aspect of the invention.

根據本發明之第四態樣的較佳製品係其中兩種或更多種如上定義之較佳特徵組合之製品。The preferred product according to the fourth aspect of the present invention is a product in which two or more preferred features as defined above are combined.

根據本發明之尤其較佳的製品包含 -具有表面之基板,其中該基板包含一種或多種選自由玻璃及有機聚合物組成之群的材料,並且透光率為80%或更高,如根據ASTM D1003(程序A)所量測。 -及佈置在該基板之該表面上之複數個 (B)銀奈米線及/或銅奈米線,其中該等奈米線(B)之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層,該一種或多種Sn(II)化合物選自由以下組成之群:2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)、甲磺酸錫(II)及SnO 其中Sn(II)化合物中Sn(II)之總重量相對於金屬奈米物體(B)(不包括Sn(II)化合物)之重量之比在0.1%至3.9%範圍內,更佳在2.0%至2.5%範圍內。此類較佳的製品典型地表現出落在如上定義之範圍內的薄層電阻及光學參數(透光率及霧度)。A particularly preferred article according to the invention comprises a substrate having a surface, wherein the substrate comprises one or more materials selected from the group consisting of glass and organic polymers, and the light transmittance is 80% or higher, as per ASTM Measured by D1003 (Procedure A). -And a plurality of (B) silver nanowires and/or copper nanowires arranged on the surface of the substrate, wherein the surface of the nanowires (B) is at least partially coated with one or more Sn (II) A layer of compound, the one or more Sn(II) compounds are selected from the group consisting of tin (II) 2-ethylhexanoate, SnF 2 , tin (II) acetone, tin mesylate ( II) and SnO where the total weight of Sn(II) in the Sn(II) compound relative to the weight of the metal nano-object (B) (excluding Sn(II) compound) is in the range of 0.1% to 3.9%, more It is preferably in the range of 2.0% to 2.5%. Such preferred products typically exhibit sheet resistance and optical parameters (transmittance and haze) that fall within the ranges defined above.

根據第五態樣,本發明係關於根據本發明之製品之用途,其用於選自由以下組成之群的裝置:光電子裝置、太陽能電池、觸控螢幕、可穿戴電子裝置、加熱器、顯示器、壓電式發電機及電致變色窗。關於根據本發明之該製品的具體及較佳特徵,參考上文在本發明之第四態樣之上下文中提供的揭示內容。According to a fifth aspect, the invention relates to the use of the product according to the invention for devices selected from the group consisting of: optoelectronic devices, solar cells, touch screens, wearable electronic devices, heaters, displays, Piezoelectric generator and electrochromic window. For specific and preferred features of the article according to the invention, reference is made to the disclosure provided above in the context of the fourth aspect of the invention.

根據第六態樣,本發明係關於用於製備根據本發明之第四態樣之製品的方法。該方法包含以下步驟 -藉由將根據本發明之第一態樣之組合物施加至基板表面或臨時支撐件表面上來形成濕膜, -自形成在該基板表面上或該臨時支撐件表面上之該濕膜中移除該組合物之載液(A) -將根據本發明之第一態樣之組合物之固體成分留在該基板之該表面上,或將根據本發明之第一態樣之組合物之固體成分自該臨時支撐件之表面轉移至基板表面。According to a sixth aspect, the invention relates to a method for preparing an article according to the fourth aspect of the invention. The method includes the following steps -Forming a wet film by applying the composition according to the first aspect of the present invention to the surface of the substrate or the surface of the temporary support, -Removing the carrier liquid (A) of the composition from the wet film formed on the surface of the substrate or on the surface of the temporary support -Leave the solid component of the composition according to the first aspect of the invention on the surface of the substrate, or transfer the solid component of the composition according to the first aspect of the invention from the surface of the temporary support to The substrate surface.

關於根據本發明之第一態樣的該組合物之具體及較佳特徵,參考上文在本發明之第一態樣之上下文中提供的揭示內容。For specific and preferred features of the composition according to the first aspect of the invention, refer to the disclosure provided above in the context of the first aspect of the invention.

根據本發明之第一態樣的該組合物(墨水)之固體成分至少包含金屬奈米物體(B),其中該等金屬奈米物體(B)之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層。對於該組合物之視情況選用之其他固體成分,參考上文在本發明之第一態樣之上下文中提供的揭示內容。According to the first aspect of the present invention, the solid content of the composition (ink) includes at least a metal nano-object (B), wherein the surface of the metal nano-object (B) is at least partially coated with one or more Sn(II) compound layer. For other solid components of the composition optionally selected, refer to the disclosure provided above in the context of the first aspect of the invention.

在該方法中,藉由將根據本發明之第一態樣之組合物(墨水)施加至基板表面上或臨時支撐件表面上,在該表面上形成濕膜。接著,自形成在該基板表面上或該臨時支撐件表面上之該濕膜中移除該組合物之載液(A)。In this method, by applying the composition (ink) according to the first aspect of the present invention to the surface of the substrate or the surface of the temporary support, a wet film is formed on the surface. Next, the carrier liquid (A) of the composition is removed from the wet film formed on the surface of the substrate or the surface of the temporary support.

關於選擇基板之準則及關於較佳的基板,如上所揭示在本發明之第四態樣之上下文中同樣適用。臨時支撐件係為載液(A)之移除提供有利條件的支撐件,但其不適合在如上文在本發明之第四態樣之上下文中定義之製品中用作基板。The criteria for selecting substrates and the preferred substrates, as disclosed above, also apply in the context of the fourth aspect of the invention. The temporary support is a support that provides favorable conditions for the removal of the carrier liquid (A), but it is not suitable for use as a substrate in an article as defined above in the context of the fourth aspect of the invention.

在將墨水施加至臨時支撐件之情況下,在移除載液(A)之後,墨水之固體成分自該臨時支撐件之表面轉移至基板之表面。包括將墨水之固體成分自臨時支撐件轉移至(永久)基板之方法亦稱為轉移塗覆方法。In the case of applying ink to the temporary support, after removing the carrier liquid (A), the solid content of the ink is transferred from the surface of the temporary support to the surface of the substrate. The method including transferring the solid content of the ink from the temporary support to the (permanent) substrate is also called the transfer coating method.

在將墨水施加至基板上之情況下,在移除載液(A)後,墨水之固體成分留在該表面上。In the case of applying ink to the substrate, after removing the carrier liquid (A), the solid content of the ink remains on the surface.

在根據本發明之第六態樣的較佳具體方法中,使用呈過濾膜形式之臨時支撐件,並藉助於過濾移除載液(A)。因此,該較佳的具體方法包含以下步驟 -藉由將根據本發明之第一態樣之組合物施加至該過濾膜之該表面,從而在該過濾膜表面上形成濕膜, -藉由過濾自形成在該過濾膜表面上之該濕膜中移除該組合物之該載液(A),使得在該過濾膜表面上形成包含該等金屬奈米物體(B)之過濾殘餘物 -將該過濾殘餘物轉移至基板表面上,從而將該等金屬奈米物體(B)安置於該基板之該表面上。In a preferred specific method according to the sixth aspect of the invention, a temporary support in the form of a filtration membrane is used, and the carrier liquid (A) is removed by means of filtration. Therefore, the preferred specific method includes the following steps -By applying the composition according to the first aspect of the present invention to the surface of the filter membrane, thereby forming a wet film on the surface of the filter membrane, -The carrier liquid (A) of the composition is removed from the wet film formed on the surface of the filter membrane by filtration, so that a filter containing the metal nano-objects (B) is formed on the surface of the filter membrane The residue -Transfer the filtering residue to the surface of the substrate, thereby placing the metallic nano-objects (B) on the surface of the substrate.

較佳地,藉由降低過濾膜下方之壓力,較佳藉由在過濾膜下方施加真空(真空過濾)來實現過濾。此類過濾技術在此項技術中係眾所周知的。Preferably, the filtration is achieved by reducing the pressure below the filter membrane, preferably by applying a vacuum (vacuum filtration) under the filter membrane. Such filtering techniques are well known in the art.

典型地,過濾膜係疏水聚合物膜,其中該聚合物較佳選自氟化聚合物,最佳聚四氟乙烯PTFE,並且孔徑為100至80 nm。合適的膜係市售的。孔徑大於金屬奈米線之直徑但小於金屬奈米線之長度。金屬奈米線無法通過孔,因為由於自過濾膜下方施加之真空的力,金屬奈米線在過濾膜上以其垂直於孔的長度(其大於孔徑)對齊。Typically, the filtration membrane is a hydrophobic polymer membrane, wherein the polymer is preferably selected from fluorinated polymers, most preferably polytetrafluoroethylene PTFE, and has a pore size of 100 to 80 nm. Suitable membrane systems are commercially available. The pore diameter is larger than the diameter of the metal nanowire but smaller than the length of the metal nanowire. The metal nanowire cannot pass through the hole because the metal nanowire is aligned on the filter membrane with its length perpendicular to the hole (which is greater than the pore size) due to the force of the vacuum applied from below the filter membrane.

當意欲包括在透明導電膜中之固體成分溶解在載液(A)中時,例如黏合劑(C)溶解在載液(A)中,涉及藉助於過濾移除載液(A)之方法係不合適的。因此,在根據本發明之第六態樣之另一較佳的具體方法中,在如上在本發明之第四態樣的上下文中定義之基板表面上形成濕膜,並藉助於蒸發自該濕膜中移除載液(A),使得當自濕膜中移除載液(A)時,溶解在載液(A)中之固體成分保留在基板之表面上。When the solid component intended to be included in the transparent conductive film is dissolved in the carrier liquid (A), for example, the binder (C) is dissolved in the carrier liquid (A), a method involving removing the carrier liquid (A) by means of filtration is Inappropriate. Therefore, in another preferred specific method according to the sixth aspect of the invention, a wet film is formed on the surface of the substrate as defined above in the context of the fourth aspect of the invention, and The carrier liquid (A) is removed from the membrane so that when the carrier liquid (A) is removed from the wet membrane, the solid components dissolved in the carrier liquid (A) remain on the surface of the substrate.

因此,該較佳的具體方法包含以下步驟 -藉由將根據本發明之第一態樣之組合物施加至該基板之該表面上,從而在該基板表面上形成濕膜 -藉由蒸發自形成在該基板之該表面上之該濕膜中移除該載液(A)。Therefore, the preferred specific method includes the following steps -By applying the composition according to the first aspect of the present invention to the surface of the substrate, a wet film is formed on the surface of the substrate -Removing the carrier liquid (A) from the wet film formed on the surface of the substrate by evaporation.

此方法最適用於墨水含有在載液(A)中溶解之固體成分,例如,在載液(A)中溶解之黏合劑(C)的情況。This method is most suitable for the case where the ink contains solid components dissolved in the carrier liquid (A), for example, the binder (C) dissolved in the carrier liquid (A).

較佳地,根據本發明之組合物藉由塗佈或印刷施加至該基板之表面上,較佳藉由選自由以下組成之群的塗佈技術施加:卷軸式塗佈、狹縫型擠壓式塗佈、噴霧塗佈、超音噴塗、浸塗及刮塗,或藉由選自由以下組成之群的印刷技術施加:噴墨印刷、移印、平版印刷、凹板印刷、網版印刷、凹版印刷及單片連續式印刷。Preferably, the composition according to the invention is applied to the surface of the substrate by coating or printing, preferably by a coating technique selected from the group consisting of: roll coating, slit-type extrusion Coating, spray coating, ultrasonic spraying, dip coating and blade coating, or applied by a printing technique selected from the group consisting of inkjet printing, pad printing, lithographic printing, gravure printing, screen printing, Gravure printing and single piece continuous printing.

較佳地,藉由將根據本發明之組合物施加至該基板之該表面而形成之濕膜的厚度在1 μm至100 μm範圍內,較佳在2 μm至50 μm範圍內。該厚度亦稱為「濕厚度」。Preferably, the thickness of the wet film formed by applying the composition according to the present invention to the surface of the substrate is in the range of 1 μm to 100 μm, preferably in the range of 2 μm to 50 μm. This thickness is also called "wet thickness".

藉由將該濕膜暴露於在20℃至120℃範圍內、較佳在40℃至120℃範圍內、最佳在80℃至120℃範圍內之溫度,自該基板之該表面上的該濕膜中移除載液(A),使得載液(A)蒸發,從而在該基板之該表面上形成透明導電膜。By exposing the wet film to a temperature in the range of 20 °C to 120 °C, preferably in the range of 40 °C to 120 °C, most preferably in the range of 80 °C to 120 °C, from the surface of the substrate The carrier liquid (A) is removed from the wet film, so that the carrier liquid (A) evaporates, thereby forming a transparent conductive film on the surface of the substrate.

在某些特定情況下,根據本發明之第六態樣之方法進一步包含以下步驟:在介於140℃至200℃範圍內、較佳介於140℃至160℃範圍內之溫度下,在空氣氛圍下,使該等金屬奈米物體(B)在該基板表面上退火,持續10分鐘至60分鐘、較佳至20分鐘至40分鐘之持續時間。應注意,退火可用於改良包含複數個金屬奈米物體(B)之透明導電膜的電子傳導性,其中該等金屬奈米物體之表面至少部分地塗覆有包含如上定義之一種或多種Sn(II)化合物之層,但其不係保護金屬奈米物體(B)免受氧化之所需效果的先決條件。亦注意到,對於表面沒有塗覆有包含任何Sn(II)化合物之層之金屬奈米物體,相應的退火處理典型地引起由於熱及氧化應力導致的電子傳導性之降低(參見下文比較實施例)。In some specific cases, the method according to the sixth aspect of the present invention further includes the steps of: at a temperature ranging from 140°C to 200°C, preferably 140°C to 160°C, in an air atmosphere Next, the metal nano-objects (B) are annealed on the surface of the substrate for a duration of 10 minutes to 60 minutes, preferably 20 minutes to 40 minutes. It should be noted that annealing can be used to improve the electronic conductivity of transparent conductive films containing a plurality of metal nano-objects (B), wherein the surfaces of the metal nano-objects are at least partially coated with one or more Sn( II) The layer of the compound, but it is not a prerequisite for the desired effect of protecting the metallic nano-object (B) from oxidation. It is also noted that for metal nano-objects whose surface is not coated with a layer containing any Sn(II) compound, the corresponding annealing treatment typically causes a reduction in electronic conductivity due to thermal and oxidative stress (see the comparative example below) ).

藉由退火,Sn(II)化合物如2-乙基己酸錫(II)被煅燒成SnO,其部分但未完全氧化成SnO2 。因此,在退火之後,金屬奈米物體(B)之表面至少部分地塗覆有包含SnO及SnO2 之混合氧化物之層。由於存在SnO,退火後之金屬奈米物體(B)仍然至少部分地塗覆有包含Sn(II)化合物(亦即SnO)之層。已經經受如上定義之退火處理的透明導電膜中Sn(II)及Sn(IV)之同時存在可藉助於X射線光子光譜法(X-ray photon spectroscopy,XPS)偵測,參見下文實施例。令人驚訝的是,即使在空氣氛圍下退火後,Sn(II)之分率亦明顯大於Sn(IV)之分率。通常,熟練技工會期望在空氣氛圍下退火引起Sn(II)基本上完全氧化成Sn(IV)。By annealing, Sn(II) compounds such as tin(II) 2-ethylhexanoate are calcined to SnO, which is partially but not completely oxidized to SnO 2 . Therefore, after annealing, the surface of the metal nano-object (B) is at least partially coated with a layer containing mixed oxides of SnO and SnO 2 . Due to the presence of SnO, the annealed metal nano-object (B) is still at least partially coated with a layer containing Sn(II) compound (ie SnO). The presence of Sn(II) and Sn(IV) in the transparent conductive film that has been subjected to the annealing treatment as defined above can be detected by means of X-ray photon spectroscopy (XPS), see the examples below. Surprisingly, even after annealing in an air atmosphere, the fraction of Sn(II) is significantly greater than that of Sn(IV). Generally, skilled trade unions expect that annealing in an air atmosphere will cause Sn(II) to be substantially completely oxidized to Sn(IV).

本發明之第七態樣係關於Sn(II)化合物在製備根據本發明之第一態樣之組合物中的用途。The seventh aspect of the invention relates to the use of a Sn(II) compound in the preparation of the composition according to the first aspect of the invention.

關於選擇合適的Sn(II)化合物之準則及關於較佳的Sn(II)化合物,如上所揭示在本發明之第四態樣的上下文中同樣適用。The guidelines regarding the selection of a suitable Sn(II) compound and the preferred Sn(II) compounds, as disclosed above, also apply in the context of the fourth aspect of the invention.

令人驚奇地發現,使用該Sn(II)化合物至少部分地塗覆分散在選自非水性極性液體之載液(A)中之金屬奈米物體之表面,可有效增強包含該等金屬奈米物體之透明導電膜抗氧化及熱應力及抗反應性化學物質之穩定性,限制條件係Sn(II)化合物滿足如上定義之準則,亦即可溶於其中沒有分散有金屬奈米物體之相同的載液(A)中且不選自由SnCl2 、SnBr2 及SnI2 組成之群。Surprisingly, it has been found that using the Sn(II) compound to at least partially coat the surface of metal nanoparticles dispersed in a carrier liquid (A) selected from non-aqueous polar liquids can effectively enhance the inclusion of these metal nanoparticles The stability of the transparent conductive film of the object is resistant to oxidation, thermal stress and anti-reactive chemicals. The limiting condition is that the Sn(II) compound satisfies the criteria defined above, and is soluble in the same in which no metallic nano-objects are dispersed. The carrier liquid (A) is not selected from the group consisting of SnCl 2 , SnBr 2 and SnI 2 .

現在藉助於非限制性實施例進一步描述本發明。The invention will now be further described by means of non-limiting examples.

實施例 1.製備根據本發明之墨水及比較墨水Examples 1. Preparation of ink according to the invention and comparative ink

根據本發明之第一態樣的墨水(如上所定義)包含分散在乙醇(A)中之複數個銀奈米線(B),其中該等分散之銀奈米線(B)之表面至少部分地塗覆有包含Sn(II)化合物之層,該Sn(II)化合物選自由2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)組成之群,該墨水藉由如上所述之根據本發明之第三態樣之方法製備。 1.1製備用於根據本發明之方法之前驅體組合物(步驟(1))The ink according to the first aspect of the present invention (as defined above) includes a plurality of silver nanowires (B) dispersed in ethanol (A), wherein the surface of the dispersed silver nanowires (B) is at least partially Is coated with a layer containing a Sn(II) compound selected from the group consisting of tin(II) 2-ethylhexanoate, SnF 2 , tin(II) acetone and tin(II) methanesulfonate In groups, the ink is prepared by the method according to the third aspect of the present invention as described above. 1.1 Preparation of precursor composition for use in the method according to the invention (step (1))

提供包含0.44重量%銀奈米線(B0)於乙二醇(用於合成銀奈米線之溶劑)中之主要前驅體組合物(步驟1.1)。在該主要前驅體組合物中,該等分散之金屬奈米物體(B)之表面塗覆有一層聚乙烯吡咯啶酮PVP(有機保護劑)。銀奈米線之平均長度為100 μm,且平均直徑為50 nm。A main precursor composition containing 0.44% by weight of silver nanowires (B0) in ethylene glycol (a solvent used to synthesize silver nanowires) is provided (step 1.1). In the main precursor composition, the surface of the dispersed metal nano-objects (B) is coated with a layer of polyvinylpyrrolidone PVP (organic protective agent). The average length of the silver nanowire is 100 μm, and the average diameter is 50 nm.

向2.5 ml該主要前驅體組合物中加入10至15 ml丙酮(步驟1.2.1),使銀奈米線在容器底部沈澱。移除上清液,且將銀奈米線再分散於10 ml乙醇中(步驟1.2.2)。將0.5 ml氫氧化銨水溶液(包含4重量%的氨)加入至步驟(1.2.2)中得到之再分散於乙醇中的銀奈米線(B0)中,從而溶解在步驟(1.2.1)中共沈澱之任何AgC,且使組合物沈降2分鐘(步驟1.2.3)。接著,加入40 ml乙醇,且將得到之組合物以3500 rpm離心5分鐘。移除上清液,且將銀奈米線再分散在乙醇中(步驟1.2.4)。離心/再分散步驟重複兩次(步驟1.2.5)。在最後一次離心並移除上清液後,將銀奈米線重新懸浮在30 ml乙醇(載液(A))中,並將此組合物用作用於利用根據本發明之第三態樣製備墨水之前驅體組合物。 1.2加入Sn(II)化合物(步驟(2))Add 10 to 15 ml of acetone to 2.5 ml of this main precursor composition (step 1.2.1) to allow the silver nanowire to settle at the bottom of the container. Remove the supernatant and re-disperse the silver nanowires in 10 ml of ethanol (step 1.2.2). Add 0.5 ml of ammonium hydroxide aqueous solution (containing 4% by weight of ammonia) to the silver nanowire (B0) obtained in step (1.2.2) and redisperse it in ethanol to dissolve in step (1.2.1) Any AgC precipitated by the CCP and the composition was allowed to settle for 2 minutes (step 1.2.3). Next, 40 ml of ethanol was added, and the resulting composition was centrifuged at 3500 rpm for 5 minutes. Remove the supernatant and re-disperse the silver nanowires in ethanol (step 1.2.4). The centrifugation/redispersion step was repeated twice (step 1.2.5). After the last centrifugation and removal of the supernatant, the silver nanowires were resuspended in 30 ml of ethanol (carrier liquid (A)), and this composition was used for preparation using the third aspect according to the present invention Pre-ink precursor composition. 1.2 Add Sn(II) compound (step (2))

向如上第1.1部分所述獲得之前驅體組合物中加入選自表1之Sn(II)化合物(溶於乙醇或水中,或呈液體形式)。加入Sn化合物後,振動組合物以便均勻分散。因此,獲得根據本發明之第一態樣的墨水(如上所述),該墨水包含 (A)乙醇(載液),及 (B)分散在該載液(A)中之銀奈米線,其中該等分散的銀奈米線(B)之表面至少部分地塗覆有包含Sn(II)化合物之層,該Sn(II)化合物選自由以下組成之群:2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)。 表1

Figure 108123783-A0304-0001
1.3製備比較墨水To the precursor composition obtained as described in section 1.1 above, a Sn(II) compound (dissolved in ethanol or water, or in liquid form) selected from Table 1 is added. After the Sn compound is added, the composition is shaken so as to be uniformly dispersed. Thus, an ink according to the first aspect of the present invention (as described above) is obtained, the ink containing (A) ethanol (carrier liquid), and (B) silver nanowires dispersed in the carrier liquid (A), The surface of the dispersed silver nanowires (B) is at least partially coated with a layer containing a Sn(II) compound selected from the group consisting of tin 2-ethylhexanoate ( II), SnF 2 , acetyl tin acetone (II) and tin (II) methanesulfonate. Table 1
Figure 108123783-A0304-0001
1.3 Preparation of comparative ink

將以與如上關於前驅體組合物所述(項1.1)相同的方式獲得之墨水用於比較實驗。 2.製備根據本發明之製品及比較製品The ink obtained in the same manner as described above for the precursor composition (item 1.1) was used for comparative experiments. 2. Preparation of products according to the invention and comparative products

透明導電膜各自包含複數個銀奈米線(B),其中該等銀奈米線(B)之表面至少部分地塗覆有包含Sn(II)化合物之層,該Sn(II)化合物選自由以下組成之群:2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)、甲磺酸錫(II)及SnO,該等透明導電膜利用如上所述之根據本發明第六態樣之方法在玻璃基板之預清潔表面上製備。The transparent conductive films each include a plurality of silver nanowires (B), wherein the surface of the silver nanowires (B) is at least partially coated with a layer containing a Sn(II) compound selected from the group consisting of The group consisting of: tin (II) 2-ethylhexanoate, SnF 2 , tin (II) acetone, tin (II) methanesulfonate, and SnO, these transparent conductive films utilize the above-described according to the present invention The method of the sixth aspect is prepared on the pre-cleaned surface of the glass substrate.

根據本發明之第一態樣的20 ml墨水包含 (A)乙醇(載液),及 (B)分散在該載液中之銀奈米線,其中該等分散之銀奈米線(B)之表面至少部分地塗覆有包含2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)或甲磺酸錫(II)之層 其中銀奈米線之重量分數以墨水之總重量計為0.002重量%,將該墨水施加至呈聚四氟乙烯製成之疏水性過濾膜之形式的臨時支撐件之表面上(Sartorius 11806-47-N,孔徑450 nm,直徑47 mm)。在將墨水倒在過濾膜上的同時,沒有在過濾膜下面施加壓力降低。因此,在其上傾倒有墨水之過濾膜之表面上形成濕膜。The 20 ml ink according to the first aspect of the present invention contains (A) ethanol (carrier liquid), and (B) silver nanowires dispersed in the carrier liquid, wherein the dispersed silver nanowires (B) The surface is at least partially coated with a layer containing tin (II) 2-ethylhexanoate, SnF 2 , tin (II) acetone, or tin (II) methanesulfonate. The weight fraction of the silver nanowires is ink The total weight is 0.002% by weight, and the ink is applied to the surface of the temporary support in the form of a hydrophobic filter made of polytetrafluoroethylene (Sartorius 11806-47-N, pore diameter 450 nm, diameter 47 mm ). While pouring ink onto the filter membrane, no pressure drop was applied under the filter membrane. Therefore, a wet film is formed on the surface of the filter film on which the ink is poured.

接著,藉助於真空過濾自形成在該過濾膜表面上之濕膜中移除乙醇(墨水之載液(A)),使得在該過濾膜之表面上形成包含該等銀奈米線(B)之過濾殘餘物,其中該等銀奈米線(B)形成互連網狀結構。在過濾膜上之過濾殘餘物完全乾燥之前,藉由以下方式將過濾殘餘物轉移至預清潔的玻璃基板之表面上:將該玻璃基板壓至安置在過濾膜上之過濾殘餘物上,同時自過濾膜下方施加真空,從而迫使過濾殘餘物與玻璃基板緊密接觸。最後,移除真空並提離過濾膜。Next, by means of vacuum filtration, ethanol is removed from the wet film formed on the surface of the filter membrane (the carrier liquid of ink (A)), so that the silver nanowires (B) containing the silver nanowires are formed on the surface of the filter membrane The filtering residue, in which the silver nanowires (B) form an interconnected network structure. Before the filter residue on the filter membrane is completely dried, the filter residue is transferred to the surface of the pre-cleaned glass substrate by pressing the glass substrate onto the filter residue placed on the filter membrane A vacuum is applied under the filter membrane, thereby forcing the filter residue into close contact with the glass substrate. Finally, remove the vacuum and lift off the filter membrane.

使用上面第1.3部分中描述的比較墨水以相同的方式獲得比較製品。 3.測試結果A comparative product was obtained in the same manner using the comparative ink described in Section 1.3 above. 3. Test results

關於熱及/或氧化處理或暴露於H2 S對透明導電膜的外觀、組成及電導率(薄層電阻)的影響,檢查根據本發明之製品及比較製品。 3.1在環境空氣下的熱處理Regarding the effect of heat and/or oxidation treatment or exposure to H 2 S on the appearance, composition and electrical conductivity (sheet resistance) of the transparent conductive film, the products according to the present invention and comparative products were examined. 3.1 Heat treatment under ambient air

根據本發明之製品及比較製品(具有包含未塗覆有包含任何Sn(II)化合物之層之銀奈米線的透明導電膜)在不同溫度(100℃、200℃或300℃,如下所示)下在環境空氣下在常規烘箱中退火30分鐘。在各製品中,透明導電膜佈置在玻璃基板之表面上,如上面第2部分所述。The product according to the present invention and the comparative product (with a transparent conductive film containing a silver nanowire not coated with a layer containing any Sn(II) compound) at different temperatures (100°C, 200°C or 300°C, as shown below ) Annealing in a conventional oven for 30 minutes under ambient air. In each product, the transparent conductive film is arranged on the surface of the glass substrate, as described in Section 2 above.

在退火之前及退火之後(在退火之後製品冷卻),藉助於掃描電子顯微鏡(scanning electron microscopy,SEM)、透射電子顯微鏡(transmission electron microscopy,TEM)及高解析度透射電子顯微鏡(HRTEM)研究透明導電薄膜中銀奈米線的外觀。在退火之前及退火之後(在退火之後製品冷卻),藉助於X射線繞射(X-ray diffraction,XRD)研究透明導電膜中銀之晶體結構。Before and after annealing (product cooling after annealing), the transparent conduction is studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM) The appearance of silver nanowires in the film. Before annealing and after annealing (after annealing the product is cooled), the crystal structure of silver in the transparent conductive film was studied by means of X-ray diffraction (XRD).

在退火之前及退火之後(退火後之製品冷卻後),藉助於拉曼光譜及X射線光電子光譜(XPS)研究透明導電膜之組成。Before annealing and after annealing (after the annealed product is cooled), the composition of the transparent conductive film is studied by means of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS).

在退火之前及退火之後(退火後之製品冷卻後),在25℃之溫度及101.3 kPa的壓力下藉助於四點探針測定透明導電薄膜之薄層電阻,該四點探針置放在安置在基板表面上之該複數個金屬奈米物體(B)上。Before annealing and after annealing (after cooling of the annealed product), the sheet resistance of the transparent conductive film was measured by means of a four-point probe at a temperature of 25°C and a pressure of 101.3 kPa. On the plurality of metallic nano-objects (B) on the surface of the substrate.

在退火之前及退火之後(退火後之製品冷卻後),根據ASTM D1003,程序A,使用Shimadzu UV3600 UV-VIS-NIR光譜儀測定製品之透光率。Before annealing and after annealing (after cooling of the annealed product), according to ASTM D1003, procedure A, the Shimadzu UV3600 UV-VIS-NIR spectrometer was used to determine the light transmittance of the product.

透明導電膜包含複數個銀奈米線(B),其中該等銀奈米線(B)之表面至少部分塗覆有包含2-乙基己酸錫(II)之層,該透明導電膜之SEM影像(圖1a)表明銀奈米線均勻分散並且以高純度存在且不存在其他粒子。在放大的SEM影像(圖1b)中,可以觀察到個別銀奈米線之間的連接,證明個別銀奈米線之間的充分接觸。沒有觀察到銀奈米線的斷裂。The transparent conductive film includes a plurality of silver nanowires (B), wherein the surface of the silver nanowires (B) is at least partially coated with a layer containing tin (II) 2-ethylhexanoate, the transparent conductive film The SEM image (Figure 1a) shows that the silver nanowires are uniformly dispersed and exist in high purity without the presence of other particles. In the enlarged SEM image (Figure 1b), the connection between individual silver nanowires can be observed, demonstrating sufficient contact between individual silver nanowires. No breakage of silver nanowires was observed.

在200℃下退火30分鐘並隨後冷卻後獲得的TEM影像(圖1c)顯示銀奈米線顯然具有核-殼結構,並且HRTEM影像(圖1d)顯示厚度小於2 nm之薄殼,該薄殼均勻分佈在銀奈米線表面上,證實銀奈米線經均勻塗層。The TEM image (Figure 1c) obtained after annealing at 200°C for 30 minutes and subsequent cooling showed that the silver nanowires clearly had a core-shell structure, and the HRTEM image (Figure 1d) showed a thin shell with a thickness of less than 2 nm. Evenly distributed on the surface of the silver nanowires, it was confirmed that the silver nanowires were uniformly coated.

根據本發明之製品的拉曼光譜(圖2a)(在製造墨水之方法的步驟(2)期間(參見上面第1.2部分)加入0.3 μl或0.5 μl的2-乙基己酸錫(II))確認在退火之後銀奈米線表面上存在SnOx (SnO及SnO2 之混合氧化物)。與比較製品(標記為「AgNWs」)之拉曼光譜相反,根據本發明之製品的拉曼光譜由於Sn-O鍵振動而在1374及1602 cm-1 處具有兩個不同的拉曼振動峰。當在製造墨水之方法的步驟(2)中加入之2-乙基己酸錫(II)的量增加時,此等峰之強度增加。Raman spectrum of the product according to the present invention (Figure 2a) (during the step (2) of the method of manufacturing ink (see section 1.2 above) 0.3 μl or 0.5 μl tin (II) 2-ethylhexanoate is added) It was confirmed that SnO x (a mixed oxide of SnO and SnO 2 ) was present on the surface of the silver nanowire after annealing. Contrary to the Raman spectrum of the comparative product (labeled "AgNWs"), the Raman spectrum of the product according to the present invention has two different Raman vibration peaks at 1374 and 1602 cm -1 due to Sn-O bond vibration. When the amount of tin (II) 2-ethylhexanoate added in step (2) of the method of manufacturing ink increases, the intensity of these peaks increases.

進行XPS分析(圖2b),從而鑑別在根據本發明之製品中銀奈米線表面處的元素組成,根據本發明之製品使用墨水獲得,且在用於製造墨水之方法的步驟(2)期間(參見上面第1.2部分)加入0.5 μl的2-乙基己酸錫(II)。除了元素Ag之峰值之外,亦可以清楚地觀察到元素Sn、C及O之峰,參見圖2b。Sn之高解析度XPS圖(未示出)展現出較大的Sn2+ 峰,但Sn4+ 僅有弱信號。顯然,儘管在空氣氛圍下進行退火處理,但大多數可偵測的Sn係Sn(II)而並非被氧化成Sn(IV)。XPS analysis (Figure 2b) was performed to identify the elemental composition at the surface of the silver nanowires in the product according to the present invention, the product according to the present invention was obtained using ink, and during step (2) of the method for manufacturing ink ( See section 1.2 above) Add 0.5 μl of tin (II) 2-ethylhexanoate. In addition to the peak of element Ag, the peaks of elements Sn, C and O can also be clearly observed, see FIG. 2b. The high-resolution XPS diagram of Sn (not shown) exhibits a larger Sn 2+ peak, but Sn 4+ has only a weak signal. Obviously, despite the annealing treatment in an air atmosphere, most of the detectable Sn is Sn(II) rather than oxidized to Sn(IV).

製品(1)具有包含複數個銀奈米線(B)之透明導電膜,其中該等銀奈米線(B)之表面至少部分地塗覆有包含2-乙基己酸錫(II)之層,製品(2)具有包含複數個銀奈米線(B)之透明導電膜,其中該等銀奈米線(B)之表面至少部分地塗覆有包含SnF2 之層,以及比較製品具有包含銀奈米線之透明導電膜,該等銀奈米線未塗覆有包含任何Sn(II)化合物之層,製品(1)及製品(2)及比較製品在300℃下退火30分鐘。The article (1) has a transparent conductive film containing a plurality of silver nanowires (B), wherein the surface of the silver nanowires (B) is at least partially coated with tin (II) containing 2-ethylhexanoate Layer, the product (2) has a transparent conductive film containing a plurality of silver nanowires (B), wherein the surface of the silver nanowires (B) is at least partially coated with a layer containing SnF 2 and the comparative product has A transparent conductive film containing silver nanowires, which are not coated with a layer containing any Sn(II) compound, and the product (1) and product (2) and the comparative product are annealed at 300°C for 30 minutes.

在退火之前該等製品之SEM影像(圖3a、c、e)未顯示比較製品(圖3a)的透明導電膜與製品(1)(圖3c)及(2)(圖3e)的透明導電膜之間的顯著差異。在每種情況下,觀察到複數個機械完整的銀奈米線,其均勻分散並高度互連。在退火之後,製品(1)(圖3d)及(2)(圖3f)的透明導電膜中的銀奈米線基本上保持其原始形狀,而在比較製品中,奈米線被破壞,並且形成與原始銀奈米線相比直徑較大的島狀液滴樣聚集體,而原始銀奈米線在SEM影像中幾乎偵測不到(圖3b)。因此,SEM影像(圖3c-f)顯示,在根據本發明之製品中,即使在300℃下退火30分鐘之後,銀奈米線亦基本上保持其原始形狀。The SEM images of these products before annealing (Figure 3a, c, e) did not show the transparent conductive film of the comparative product (Figure 3a) and the transparent conductive film of the products (1) (Figure 3c) and (2) (Figure 3e) Significant differences between. In each case, a number of mechanically complete silver nanowires were observed, which were evenly dispersed and highly interconnected. After annealing, the silver nanowires in the transparent conductive films of the products (1) (FIG. 3d) and (2) (FIG. 3f) basically maintained their original shapes, while in the comparative products, the nanowires were destroyed, and An island-like droplet-like aggregate with a larger diameter than the original silver nanowire was formed, and the original silver nanowire was almost undetectable in the SEM image (Figure 3b). Therefore, SEM images (Figures 3c-f) show that in the article according to the present invention, even after annealing at 300°C for 30 minutes, the silver nanowires substantially maintain their original shape.

在退火之後的比較製品之XRD圖中,與退火之前的比較製品之XRD圖相比,可歸因於銀的繞射峰之強度顯著增強(圖4a)。此被認為係退火期間銀奈米線熔融的結果,此導致在冷卻後形成具有更大尺寸及增加的結晶度之Ag粒子。相反,退火處理顯然不會導致製品(1)的XRD圖中由銀引起的繞射峰的任何顯著變化,因此證實了根據本發明之製品中銀奈米線之熱穩定性。(圖4b)。In the XRD pattern of the comparative product after annealing, compared with the XRD pattern of the comparative product before annealing, the intensity of the diffraction peak attributable to silver is significantly enhanced (Figure 4a). This is believed to be the result of the melting of the silver nanowires during annealing, which results in the formation of Ag particles with a larger size and increased crystallinity after cooling. In contrast, the annealing treatment obviously does not cause any significant change in the diffraction peak caused by silver in the XRD pattern of the product (1), thus confirming the thermal stability of the silver nanowires in the product according to the present invention. (Figure 4b).

藉由施加具有不同重量分數的銀奈米線(B)(0.002重量%至0.5重量%)之墨水來獲得具有導電透明膜的一系列根據本發明之製品,其中該等銀奈米線(B)之表面至少部分塗覆有包含2-乙基己酸錫(II)之層。在每種情況下,施加相同體積的墨水(20 ml),從而獲得每單位基板表面積具有不同量的銀奈米線之透明導電膜。此等製品在空氣氛圍下在100℃下退火30分鐘。A series of articles according to the invention with a conductive transparent film are obtained by applying inks with different weight fractions of silver nanowires (B) (0.002% to 0.5% by weight), wherein the silver nanowires (B ) Is at least partially coated with a layer containing tin (II) 2-ethylhexanoate. In each case, the same volume of ink (20 ml) was applied to obtain a transparent conductive film with different amounts of silver nanowires per unit substrate surface area. These products were annealed at 100°C for 30 minutes in an air atmosphere.

在根據本發明之此系列製品中,薄層電阻及透光率(參見圖5a)越高,每單位基板表面積的銀奈米線的量越低。在100℃下在空氣氛圍下退火似乎對透光率幾乎沒有影響,但引起薄層電阻的適度增加,當每單位基板表面積的銀奈米線的量較低時,此更加明顯。然而,在每種情況下,薄層電阻及透光率具有落在如上定義之較佳範圍內的可接受值。In this series of products according to the present invention, the higher the sheet resistance and light transmittance (see FIG. 5a), the lower the amount of silver nanowires per unit surface area of the substrate. Annealing at 100°C in an air atmosphere seems to have little effect on light transmittance, but causes a modest increase in sheet resistance, which is more pronounced when the amount of silver nanowires per unit substrate surface area is lower. However, in each case, the sheet resistance and light transmittance have acceptable values that fall within the preferred ranges defined above.

將使用在製造墨水之方法之步驟(2)期間(參見上面第1.2部分)加入0.3 μl 2-乙基己酸錫(II)的墨水獲得之製品及比較製品連續加熱達至300℃,且監測薄層電阻(參見圖5b)。比較製品(標記為「AgNWs膜」,圖5b的左側部分)之薄層電阻連續增加,達至180℃至200℃之溫度範圍,此時開始急劇增加。在室溫下,根據本發明之製品(圖5b的右側部分)的初始薄層電阻高於比較製品的初始薄層電阻,但是當溫度升高時急劇下降。在薄層電阻間歇性增加但仍然低於初始值之後,薄層電阻在介於約150℃與200℃之間的溫度範圍內顯著降低。達至300℃後,將溫度保持在此值下,且觀察到電阻進一步降低。因此,在高於100℃之高溫下在空氣氛圍下退火可用於降低根據本發明之製品的薄層電阻。必須注意的是,圖5b中所示之結果係在動態條件下獲得的,且因此不能直接應用於靜態條件。藉助於在靜態條件下進行進一步測試(在恆溫下退火30分鐘),結果表明當退火溫度在140℃至160℃範圍內時,薄層電阻顯著降低。 3.2氧化處理The product obtained by adding 0.3 μl of tin (II) 2-ethylhexanoate (II) ink during the step (2) of the method for manufacturing ink (see section 1.2 above) and the comparative product are continuously heated to 300°C and monitored Sheet resistance (see Figure 5b). The sheet resistance of the comparative product (labeled "AgNWs film", left part of Fig. 5b) continued to increase, reaching a temperature range of 180°C to 200°C, at which point it began to increase dramatically. At room temperature, the initial sheet resistance of the product according to the present invention (right part of FIG. 5b) is higher than that of the comparative product, but decreases sharply when the temperature increases. After the sheet resistance increases intermittently but is still below the initial value, the sheet resistance decreases significantly in a temperature range between about 150°C and 200°C. After reaching 300°C, the temperature was kept at this value, and a further decrease in resistance was observed. Therefore, annealing in an air atmosphere at a high temperature above 100°C can be used to reduce the sheet resistance of the article according to the invention. It must be noted that the results shown in Figure 5b are obtained under dynamic conditions and therefore cannot be directly applied to static conditions. By further testing under static conditions (annealing at a constant temperature for 30 minutes), the results show that when the annealing temperature is in the range of 140°C to 160°C, the sheet resistance is significantly reduced. 3.2 Oxidation treatment

根據本發明之製品及比較製品藉由將待測試之各製品在O2 /O3 混合物(O3 濃度為0.5體積%)下在150℃下放置於密封的管式爐中1小時來經受氧化應力。在各製品中,透明導電膜佈置在玻璃基板之表面上,如上面在第2部分中所述。The product according to the present invention and the comparative product were subjected to oxidation by placing each product to be tested in an O 2 /O 3 mixture (O 3 concentration of 0.5% by volume) in a sealed tube furnace at 150° C. for 1 hour. stress. In each product, the transparent conductive film is arranged on the surface of the glass substrate, as described in Part 2 above.

在氧化處理之前及在氧化處理之後(在製品冷卻之後),藉助於拉曼光譜及X射線光電子光譜(XPS)研究透明導電膜之組成。Before the oxidation treatment and after the oxidation treatment (after the product is cooled), the composition of the transparent conductive film is studied by means of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS).

在氧化處理之前及在氧化處理之後(在製品冷卻之後),藉助於置放在安置在基板表面上之該複數個金屬奈米物體(B)上的四點探針在25℃之溫度及101.3 kPa之壓力下測定透明導電膜之薄層電阻。Before the oxidation treatment and after the oxidation treatment (after the product is cooled), by means of a four-point probe placed on the plurality of metal nano-objects (B) placed on the substrate surface at a temperature of 25°C and 101.3 The sheet resistance of the transparent conductive film was measured under the pressure of kPa.

製品(3)具有包含複數個銀奈米線(B)之透明導電膜,其中該等銀奈米線(B)之表面至少部分地塗覆有包含SnF2 之層,該製品(3)及比較製品經受上述氧化處理。The article (3) has a transparent conductive film containing a plurality of silver nanowires (B), wherein the surface of the silver nanowires (B) is at least partially coated with a layer containing SnF 2 , the article (3) and The comparative product was subjected to the above-mentioned oxidation treatment.

在氧化處理之前記錄的比較製品(標記為「AgNWs」)之XPS圖顯示出可歸因於銀的峰及可歸因於源自痕量表面保護劑PVP之碳或氧的峰(圖6a),而根據本發明之製品(3)的XPS圖顯示出可歸因於Sn及F的額外峰(圖6b)。作為比較製品之氧化處理的結果,XPS圖中之Ag峰顯著移位,表明銀奈米線之銀的氧化(圖6c)。相反,在製品(3)之氧化處理之後,XPS圖中之Ag峰不改變,表明銀奈米線未經氧化(圖6d)。最有趣的是,在製品(3)之氧化處理之後,XPS圖中之Sn2+ 峰(圖6e及6f)沒有變化。在氧化處理之前及之後,Sn之高解析度XPS圖(圖6e及6f)表現出大的Sn2+ 峰,但Sn4+ 僅有弱信號(虛線)。顯然,大多數可偵測的Sn仍然係Sn(II)而並非被氧化成Sn(IV)。The XPS plot of the comparative product (marked as "AgNWs") recorded before the oxidation treatment showed a peak attributable to silver and a peak attributable to carbon or oxygen derived from trace surface protective agent PVP (Figure 6a) However, the XPS pattern of the product (3) according to the present invention shows additional peaks attributable to Sn and F (Figure 6b). As a result of the oxidation treatment of the comparison product, the Ag peak in the XPS diagram shifted significantly, indicating the oxidation of silver in the silver nanowire (Figure 6c). On the contrary, after the oxidation treatment of the product (3), the Ag peak in the XPS diagram did not change, indicating that the silver nanowires were not oxidized (Figure 6d). Most interestingly, after the oxidation treatment of the product (3), the Sn 2+ peaks in the XPS chart (Figures 6e and 6f) did not change. Before and after the oxidation treatment, the high-resolution XPS diagrams of Sn (Figures 6e and 6f) showed a large Sn 2+ peak, but Sn 4+ had only a weak signal (dashed line). Obviously, most detectable Sn is still Sn(II) and not oxidized to Sn(IV).

製品(4)、(5)及(6)使用藉由在製造墨水之方法的步驟(2)中(參見上面第1.2部分)加入不同量(分別為0.3 μl、0.5 μl及1 μl)的2-乙基己酸錫(II)來製造的墨水而獲得,該等製品(4)、(5)及(6)及比較製品經受上述氧化處理。在製品(4)、(5)及(6)中,在銀奈米線表面上包含2-乙基己酸錫(II)之層的厚度隨著在製造墨水之方法的步驟(2)期間(參見上面第1.2部分)加入的2-乙基己酸錫(II)之量遞增而增加。Products (4), (5) and (6) are used by adding 2 different amounts (0.3 μl, 0.5 μl and 1 μl respectively) in step (2) of the method of manufacturing ink (see section 1.2 above) -Obtained from an ink made of tin (II) ethylhexanoate, these products (4), (5) and (6) and comparative products are subjected to the above-mentioned oxidation treatment. In the products (4), (5) and (6), the thickness of the layer containing tin (II) 2-ethylhexanoate on the surface of the silver nanowires varies during the step (2) of the method of manufacturing ink (See section 1.2 above) The amount of tin (II) 2-ethylhexanoate added increases with increasing.

在氧化處理之前,比較製品之薄層電阻(參見圖7)低於根據本發明之製品的薄層電阻,因為在比較製品中銀奈米線沒有塗覆包含Sn(II)化合物之層。然而,對於比較製品,觀察到氧化處理後的薄層電阻顯著增加。相比之下,對於製品(4)及(5),觀察到薄層電阻僅略微增加10歐姆/平方,顯示出即使在苛刻的條件下亦有良好的抗氧化穩定性。由於在步驟(2)中加入的2-乙基己酸錫(II)之加入重量相對於前驅體組合物中銀奈米線(B0)之重量較高(參見上面第1.2部分),所以在退火之前,製品(6)表現出較高薄層電阻。顯然,在製品(6)中,利用2-乙基己酸錫(II)產生的銀奈米線表面之塗層相當厚,因此使用該墨水獲得的透明導電膜之薄層電阻相當高。此外,製品(6)在氧化處理後之薄層電阻顯著增加表明,在製品(6)中,2-乙基己酸錫(II)之存在不能提供足夠對抗此測試中施加之氧化應力的保護。有趣的是,在製品(4)至(6)中,使用藉由加入0.5 μl 2-乙基己酸錫(II)製造之墨水獲得的製品(5)在氧化處理之前及之後具有最低的薄層電阻,而使用藉由加入較低或較高量的2-乙基己酸錫(II)(0.3 μl或1 μl)而製造之墨水獲得的製品(4)及(6)表現出更高的薄層電阻。此證明Sn(II)化合物中Sn(II)之重量相對於銀奈米線(B)之重量的比率需要仔細最佳化以獲得最佳的抗氧化保護。 3.3暴露於H2 SBefore the oxidation treatment, the sheet resistance of the comparative article (see FIG. 7) was lower than that of the article according to the present invention, because the silver nanowire in the comparative article was not coated with a layer containing Sn(II) compound. However, for the comparative product, a significant increase in sheet resistance after the oxidation treatment was observed. In contrast, for the products (4) and (5), the sheet resistance was observed to increase only slightly by 10 ohms/square, showing good anti-oxidation stability even under harsh conditions. Since the weight of the tin (II) 2-ethylhexanoate added in step (2) is higher than the weight of the silver nanowire (B0) in the precursor composition (see section 1.2 above), the annealing Previously, the product (6) showed higher sheet resistance. Obviously, in the product (6), the coating layer on the surface of the silver nanowire produced by tin (II) 2-ethylhexanoate is quite thick, so the sheet resistance of the transparent conductive film obtained using this ink is quite high. In addition, the significant increase in the sheet resistance of the product (6) after oxidation treatment indicates that the presence of tin (II) 2-ethylhexanoate in the product (6) does not provide sufficient protection against the oxidative stress applied in this test . Interestingly, among the products (4) to (6), the product (5) obtained by using ink made by adding 0.5 μl tin (II) 2-ethylhexanoate had the lowest thickness before and after the oxidation treatment Layer resistance, and products (4) and (6) obtained using inks made by adding lower or higher amounts of tin (II) 2-ethylhexanoate (0.3 μl or 1 μl) show higher Sheet resistance. This proves that the ratio of the weight of Sn(II) in the Sn(II) compound to the weight of the silver nanowire (B) needs to be carefully optimized to obtain the best antioxidant protection. 3.3 Exposure to H 2 S

將根據本發明之製品(7)、(8)及(9)及比較製品在室溫下暴露於由H2 S及N2 (各50體積%)組成之氛圍中10小時。在各製品中,透明導電膜佈置在玻璃基板之表面上,如上面第2部分所述。The products (7), (8) and (9) and the comparative product according to the present invention were exposed to an atmosphere composed of H 2 S and N 2 (each 50% by volume) at room temperature for 10 hours. In each product, the transparent conductive film is arranged on the surface of the glass substrate, as described in Section 2 above.

在暴露於H2 S之前、在暴露於H2 S 5小時之後以及在暴露於H2 S 10小時之後,在25℃之溫度及101.3 kPa之壓力下,藉助於置放在安置在基板表面上之該複數個金屬奈米物體(B)上的四點探針,測定透明導電膜之薄層電阻。On prior exposure to H 2 S, after exposure to H 2 S 5 hours and after exposure to H 2 S 10 hours at a temperature 25 ℃ a pressure of 101.3 kPa and the means disposed on the substrate surface placed in The four-point probe on the plurality of metallic nano-objects (B) is used to measure the sheet resistance of the transparent conductive film.

製品(7)、(8)及(9)使用藉由在製造墨水之方法的步驟(2)中(參見上面第1.2部分)加入不同量(分別為0.3 μl、0.5 μl及1 μl)的2-乙基己酸錫(II)來製造的墨水而獲得,該等製品(7)、(8)及(9)及比較製品如上所述暴露於H2 S。在製品(7)、(8)及(9)中,在銀奈米線(B)表面上包含2-乙基己酸錫(II)之層的厚度隨著在製造墨水之方法的步驟(2)期間(參見上面第1.2部分)加入的2-乙基己酸錫(II)之量遞增而增加。The products (7), (8) and (9) are used by adding 2 (0.3 μl, 0.5 μl and 1 μl respectively) of different amounts in step (2) of the method of manufacturing ink (see section 1.2 above) -Obtained from an ink made of tin (II) ethylhexanoate, and these products (7), (8) and (9) and comparative products are exposed to H 2 S as described above. In the products (7), (8) and (9), the thickness of the layer containing tin (II) 2-ethylhexanoate on the surface of the silver nanowire (B) follows the steps of the method of manufacturing ink ( 2) During the period (see section 1.2 above), the amount of tin (II) 2-ethylhexanoate added increases gradually.

在暴露於H2 S之前,比較製品之薄層電阻(參見圖8)低於根據本發明之製品的薄層電阻,因為在比較製品中銀奈米線沒有塗覆包含Sn(II)化合物之層。然而,對於比較製品,觀察到在暴露於H2 S之後的薄層電阻顯著增加。相比之下,對於製品(7)及(8),即使在暴露於H2 S 10小時之後,薄層電阻亦不超過150歐姆/平方。由於在製造墨水之方法的步驟(2)中(參見上面第1.2部分)加入的2-乙基己酸錫(II)之重量相對於前驅體組合物中銀奈米線(B0)之重量較高,所以在暴露於H2 S之前,製品(9)已表現出較高薄層電阻。顯然,在製品(9)中,利用2-乙基己酸錫(II)產生的銀奈米線表面之塗層相當厚,因此使用該墨水獲得的透明導電膜之薄層電阻相當高。製品(9)在暴露於H2 S之後表現出薄層電阻顯著增加,不過相比於比較製品較小。Before exposure to H 2 S, the sheet resistance of the comparative product (see FIG. 8) is lower than the sheet resistance of the product according to the present invention because the silver nanowire in the comparative product is not coated with a layer containing Sn(II) compound . However, for the comparative article, a significant increase in sheet resistance after exposure to H 2 S was observed. In contrast, for products (7) and (8), even after 10 hours of exposure to H 2 S, the sheet resistance did not exceed 150 ohms/square. Because the weight of tin (II) 2-ethylhexanoate added in step (2) of the method of manufacturing ink (see section 1.2 above) is higher than the weight of the silver nanowire (B0) in the precursor composition Therefore, before exposure to H 2 S, the product (9) has shown a higher sheet resistance. Obviously, in the product (9), the coating on the surface of the silver nanowire produced by tin (II) 2-ethylhexanoate is quite thick, so the sheet resistance of the transparent conductive film obtained using this ink is quite high. The product (9) showed a significant increase in sheet resistance after being exposed to H 2 S, but it was smaller than the comparative product.

no

圖式顯示: 圖1a-d 根據本發明之製品的SEM、TEM及HRTEM影像 圖2a、b 根據本發明之製品及比較製品的拉曼光譜及根據本發明之製品的XPS圖 圖3a-f 在退火之前及之後根據本發明之製品及比較製品的SEM影像 圖4a、b 在退火之前及之後根據本發明之製品及比較製品的XRD圖 圖5a 在100℃下退火之前及之後根據本發明之一系列製品的薄層電阻及透光率 圖5b 隨動態加熱期間之時間變化的根據本發明之製品及比較製品的薄層電阻 圖6a-f 在氧化處理之前及之後根據本發明之製品及比較製品的XPS圖 圖7 在氧化處理之前及之後根據本發明之製品及比較製品的薄層電阻 圖8 在暴露於H2 S之前及之後根據本發明之製品及比較製品的薄層電阻The figures show: Figure 1a-d SEM, TEM and HRTEM images of the product according to the invention Figure 2a, b The Raman spectrum of the product according to the invention and the comparative product and the XPS diagram of the product according to the invention Figure 3a-f SEM images of products according to the present invention and comparative products before and after annealing Figure 4a, b XRD patterns of products according to the present invention and comparative products before and after annealing Figure 5a Before and after annealing at 100°C according to one of the present invention Sheet resistance and light transmittance of series of products Figure 5b Sheet resistance of products according to the invention and comparative products as a function of time during dynamic heating Figure 6a-f Products and comparison products according to the invention before and after oxidation treatment XPS diagram of Figure 7 Sheet resistance of the product according to the present invention and the comparative product before and after the oxidation treatment Figure 8 Sheet resistance of the product according to the present invention and the comparative product before and after exposure to H 2 S

Claims (15)

一種組合物,其包含 (A)選自非水性極性液體之載液 (B)分散在該載液(A)中之金屬奈米物體,其中該等分散之金屬奈米物體(B)之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層 其中該等Sn(II)化合物選自可溶於其中沒有分散有金屬奈米物體之相同載液(A)中之Sn(II)化合物 限制條件係該層不包含SnCl2 、SnBr2 及SnI2 中之任何一種 其中在該組合物中 該等金屬奈米物體(B)之重量分數在0.001重量%至10重量%範圍內 並且該等Sn(II)化合物中Sn(II)之總重量與該等金屬奈米物體之重量之比在0.01%至3.9%範圍內。A composition comprising (A) a carrier liquid selected from a non-aqueous polar liquid (B) metal nano-objects dispersed in the carrier liquid (A), wherein the surfaces of the dispersed metal nano-objects (B) At least partially coated with a layer containing one or more Sn(II) compounds wherein the Sn(II) compounds are selected from Sn(II) soluble in the same carrier liquid (A) in which no metallic nano-objects are dispersed ) The compound limitation is that the layer does not contain any one of SnCl 2 , SnBr 2 and SnI 2 wherein the weight fraction of the metal nano-objects (B) in the composition is in the range of 0.001% to 10% by weight and The ratio of the total weight of Sn(II) in the Sn(II) compounds to the weight of the metal nano-objects is in the range of 0.01% to 3.9%. 如請求項1所述之組合物,其中 該等Sn(II)化合物選自由2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)組成之群 及/或 該等金屬奈米物體選自由金屬奈米薄片及金屬奈米線組成之群,較佳選自由銀奈米線及銅奈米線組成之群 及/或 該載液(A)選自具有1至5個碳原子之醇,較佳乙醇。The composition according to claim 1, wherein the Sn(II) compounds are selected from the group consisting of tin(II) 2-ethylhexanoate, SnF 2 , tin(II) acetone and tin(II) methanesulfonate The group and/or the metal nano-objects are selected from the group consisting of metal nano-sheets and metal nano-wires, preferably selected from the group consisting of silver nano-wires and copper nano-wires and/or the carrier liquid (A ) Is selected from alcohols having 1 to 5 carbon atoms, preferably ethanol. 如請求項1或2所述之組合物,其中在該組合物中 以該組合物之總重量計,該等金屬奈米物體(B)之重量分數在0.001至5重量%範圍內,最佳為0.002至1重量% 及/或 該等Sn(II)化合物中Sn(II)之總重量與該等金屬奈米物體之重量之比在2.0%至2.5%範圍內。The composition according to claim 1 or 2, wherein in the composition Based on the total weight of the composition, the weight fraction of the metal nano-objects (B) is in the range of 0.001 to 5% by weight, preferably 0.002 to 1% by weight And/or The ratio of the total weight of Sn(II) in the Sn(II) compounds to the weight of the metal nano-objects is in the range of 2.0% to 2.5%. 如前述請求項中任一項所述之組合物,其進一步包含 (C)黏合劑,其選自由以下組成之群:纖維素醚、結晶纖維素、聚(甲基)丙烯酸酯、丙烯酸酯與甲基丙烯酸酯之共聚物、苯乙烯與(甲基)丙烯酸酯之共聚物、聚苯乙烯、聚丙烯醯胺、聚乙烯醇、聚乙烯吡咯啶酮、聚苯乙烯磺酸、聚酯、聚胺酯、聚碳酸酯、明膠、丙烯酸酯-乙酸乙烯酯共聚物、聚葡萄糖及其摻合物。The composition according to any one of the preceding claims, further comprising (C) Binder, selected from the group consisting of cellulose ether, crystalline cellulose, poly(meth)acrylate, copolymer of acrylate and methacrylate, styrene and (meth)acrylate Copolymers, polystyrene, polyacrylamide, polyvinyl alcohol, polyvinylpyrrolidone, polystyrenesulfonic acid, polyester, polyurethane, polycarbonate, gelatin, acrylate-vinyl acetate copolymer, poly Glucose and its blends. 一種用於製備如請求項1至4中任一項所述之組合物之方法, 該方法包含以下步驟 (1)提供前驅體組合物,該前驅體組合物包含 (A)選自非水性極性液體之載液 (B0)分散在該載液(A)中之金屬奈米物體 (2)向該前驅體組合物中加入一種或多種Sn(II)化合物,該一種或多種Sn(II)化合物可溶於其中沒有分散有金屬奈米物體之相同載液(A)中,限制條件係該一種或多種Sn(II)化合物不包含SnCl2 、SnBr2 及SnI2 中之任何一種 其中,在步驟(2)中,該等Sn(II)化合物的加入量使得加入的該等Sn(II)化合物中Sn(II)之總重量相對於該前驅體組合物中該等金屬奈米物體(B0)之重量之比在0.01%至3.9%範圍內。A method for preparing the composition according to any one of claims 1 to 4, the method comprising the following step (1) providing a precursor composition, the precursor composition comprising (A) selected from non-aqueous polar Liquid carrier liquid (B0) metal nano-objects dispersed in the carrier liquid (A) (2) Add one or more Sn(II) compounds to the precursor composition, the one or more Sn(II) compounds Soluble in the same carrier liquid (A) in which metal nano-objects are not dispersed, the restriction is that the one or more Sn(II) compounds do not contain any of SnCl 2 , SnBr 2 and SnI 2 , in the step (2), the amount of the Sn(II) compounds added is such that the total weight of Sn(II) in the Sn(II) compounds added is relative to the metal nano-objects (B0) in the precursor composition The weight ratio is in the range of 0.01% to 3.9%. 如請求項5所述之方法,其中 在步驟(1)中提供之該前驅體溶液中,以該前驅體組合物之總重量計,該等金屬奈米物體(B0)之重量分數在0.001重量%至10重量%範圍內,較佳為0.001至5重量%,最佳為0.002重量%至1重量% 及/或 在步驟(2)中,該等Sn(II)化合物的加入量使得加入的該等Sn(II)化合物中Sn(II)之總重量相對於該前驅體組合物中該等金屬奈米物體(B0)之重量之比在2.0%至2.5%範圍內。The method according to claim 5, wherein In the precursor solution provided in step (1), based on the total weight of the precursor composition, the weight fraction of the metal nano-objects (B0) is in the range of 0.001% to 10% by weight, preferably 0.001 to 5% by weight, preferably 0.002% to 1% by weight And/or In step (2), the amount of the Sn(II) compounds added is such that the total weight of Sn(II) in the Sn(II) compounds added is relative to the metal nano-objects in the precursor composition ( B0) The weight ratio is in the range of 2.0% to 2.5%. 如請求項5或6所述之方法,其中該Sn(II)化合物選自由2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)組成之群。The method according to claim 5 or 6, wherein the Sn(II) compound is selected from the group consisting of tin(II) 2-ethylhexanoate, SnF 2 , tin(II) acetone, and tin(II) methanesulfonate Group. 一種用於製備製品之方法, 其包含具有表面之基板 及佈置在該基板之該表面上之複數個 (B)金屬奈米物體,其中該等金屬奈米物體之表面至少部分地塗覆有包含一種或多種Sn(II)化合物之層,限制條件係該層不包含SnCl2 、SnBr2 及SnI2 中之任何一種, 該方法包含以下步驟 藉由將如請求項1至4中任一項所述之組合物施加至基板表面或臨時支撐件表面上來形成濕膜, 自形成在該基板表面上或該臨時支撐件表面上之該濕膜中移除該組合物之載液(A) 將如請求項1至4中任一項所述之組合物之固體成分留在該基板之該表面上或將如請求項1至4中任一項所述之組合物之固體成分自該臨時支撐件之表面轉移至基板表面。A method for preparing an article, comprising a substrate having a surface and a plurality of (B) metal nano-objects arranged on the surface of the substrate, wherein the surfaces of the metal nano-objects are at least partially coated with A layer of one or more Sn(II) compounds, with the restriction that the layer does not contain any one of SnCl 2 , SnBr 2 and SnI 2 , the method includes the following steps by applying any one of claims 1 to 4 The composition described above is applied to the surface of the substrate or the surface of the temporary support to form a wet film, and the carrier liquid (A) that removes the composition from the wet film formed on the surface of the substrate or the surface of the temporary support will be as The solid component of the composition according to any one of claims 1 to 4 is left on the surface of the substrate or the solid component of the composition according to any one of claims 1 to 4 is removed from the temporary support The surface is transferred to the substrate surface. 如請求項8所述之方法,其中該臨時支撐件係過濾膜,並且該方法包括以下步驟: 藉由將如請求項1至4中任一項所述之組合物施加至該過濾膜之該表面,從而在該過濾膜表面上形成濕膜, 藉由過濾自形成在該過濾膜表面上之該濕膜中移除該組合物之該載液(A),使得在該過濾膜表面上形成包含該等金屬奈米物體(B)之過濾殘餘物 將該過濾殘餘物轉移至基板表面上,從而將該等金屬奈米物體(B)安置於該基板之該表面上。The method according to claim 8, wherein the temporary support is a filter membrane, and the method includes the following steps: By applying the composition as described in any one of claims 1 to 4 to the surface of the filter membrane, thereby forming a wet film on the surface of the filter membrane, The carrier liquid (A) of the composition is removed from the wet membrane formed on the surface of the filtration membrane by filtration, so that a filtration residue including the metal nano-objects (B) is formed on the surface of the filtration membrane Thing The filtering residue is transferred to the surface of the substrate, so that the metallic nano-objects (B) are placed on the surface of the substrate. 如請求項8所述之方法,其包含以下步驟 藉由將如請求項1至4中任一項所述之組合物施加至該基板之該表面上,從而在該基板表面上形成濕膜 藉由蒸發自形成在該基板之該表面上之該濕膜中移除該載液(A)。The method according to claim 8, which comprises the following steps Forming a wet film on the surface of the substrate by applying the composition as described in any one of claims 1 to 4 to the surface of the substrate The carrier liquid (A) is removed from the wet film formed on the surface of the substrate by evaporation. 如請求項8至10中任一項所述之方法,其中該基板包含一種或多種選自由玻璃及有機聚合物組成之群的材料。The method of any one of claims 8 to 10, wherein the substrate comprises one or more materials selected from the group consisting of glass and organic polymers. 如請求項8至11中任一項所述之方法,其進一步包含以下步驟:在介於140℃至200℃範圍內、較佳介於140℃至160℃範圍內之溫度下,在空氣氛圍下,使該等金屬奈米物體(B)在該基板表面上退火,持續10分鐘至60分鐘、較佳至20分鐘至40分鐘之持續時間。The method according to any one of claims 8 to 11, further comprising the steps of: at a temperature in the range of 140°C to 200°C, preferably in the range of 140°C to 160°C, under an air atmosphere , The metal nano-objects (B) are annealed on the surface of the substrate for a duration of 10 minutes to 60 minutes, preferably 20 minutes to 40 minutes. 一種Sn(II)化合物之用途,其用於製備如請求項1至4中任一項所述之組合物。Use of a Sn(II) compound for preparing the composition according to any one of claims 1 to 4. 如請求項13之用途,其中該等Sn(II)化合物選自由2-乙基己酸錫(II)、SnF2 、乙醯丙酮錫(II)及甲磺酸錫(II)組成之群。The use according to claim 13, wherein the Sn(II) compounds are selected from the group consisting of tin(II) 2-ethylhexanoate, SnF 2 , tin(II) acetone, and tin(II) methanesulfonate. 一種如請求項1至4中任一項所述之墨水之用途,其用於獲得包含安置在基板表面上之金屬奈米物體(B)之導電透明膜。A use of the ink according to any one of claims 1 to 4 for obtaining a conductive transparent film containing a metal nano-object (B) arranged on the surface of a substrate.
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