TW202009908A - Display device and compensation capacitor operating method - Google Patents

Display device and compensation capacitor operating method Download PDF

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TW202009908A
TW202009908A TW107130014A TW107130014A TW202009908A TW 202009908 A TW202009908 A TW 202009908A TW 107130014 A TW107130014 A TW 107130014A TW 107130014 A TW107130014 A TW 107130014A TW 202009908 A TW202009908 A TW 202009908A
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gate
capacitance
display device
gate lines
lines
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TWI674571B (en
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黃昱榮
李興龍
李素貞
張正良
蔡孟杰
黃德群
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友達光電股份有限公司
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Priority to CN201811317564.2A priority patent/CN109346485B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

A display device has a display area and a plurality of non-display areas. The display device includes a substrate, a plurality of pixel units, a plurality of first gate lines, a plurality of second gate lines, a plurality of first data lines, a plurality of second data lines, and a plurality of capacitor compensation structures. The pixel units are arranged on the substrate in a matrix. The first gate line and the second gate line are arranged in rows on the substrate. The first data line and the second data line are arranged in columns on the substrate. The capacitor compensation structures are arranged in a matrix in the non-display areas. The capacitor compensation structure includes a portion of the second gate line, an insulating layer, a semiconductor layer, and a portion of the second data line. The insulating layer is disposed on the portion of the second gate line. The semiconductor layer is disposed on the insulating layer. The portion of the second data line is disposed on the semiconductor layer. The portion of the second data lines and the portion of the second gate lines are disposed on opposite sides of the semiconductor layer.

Description

顯示裝置及補償電容的操作方法Display device and operation method of compensation capacitor

本發明是有關於一種顯示裝置,且特別是有關於一種具有電容補償結構的顯示裝置以及補償電容的操作方法。The present invention relates to a display device, and more particularly to a display device with a capacitance compensation structure and a method of operating a compensation capacitor.

目前,在具有液晶顯示裝置的電子產品(例如:手機)中,常會在其液晶顯示裝置的上方中心設置有凹孔(notch),以放置相機或感測器;甚至還會將其液晶顯示裝置的四個角做成圓角,以滿足消費者在電子產品外觀上的需求。然而,相較於液晶顯示裝置的其他區域,在凹孔和圓角處的閘極線上所對應的畫素數量比較少,因而使得在凹孔和圓角處的閘極線的閘極負載與其他區域的閘極線的閘極負載有所不同,進而造成液晶顯示裝置有顯示亮度不均勻且畫面不連續的問題。At present, in electronic products with liquid crystal display devices (such as mobile phones), a notch is often provided in the upper center of the liquid crystal display device to place the camera or sensor; even the liquid crystal display device The four corners are rounded to meet consumers' needs in the appearance of electronic products. However, compared to other areas of the liquid crystal display device, the number of pixels corresponding to the gate lines at the concave holes and rounded corners is relatively small, thus making the gate load of the gate lines at the concave holes and rounded corners The gate loads of the gate lines in other areas are different, which in turn causes the LCD display device to have uneven display brightness and discontinuous pictures.

本發明提供一種顯示裝置,包括有電容補償結構,可具有較均勻的顯示亮度,且可避免畫面不連續的問題。The present invention provides a display device including a capacitance compensation structure, which can have a relatively uniform display brightness, and can avoid the problem of discontinuous pictures.

本發明提供一種補償電容的操作方法,利用上述具有電容補償結構的顯示裝置,可改善顯示亮度不均勻且畫面不連續的問題。The invention provides an operation method of compensating capacitance. By using the above display device with capacitance compensation structure, the problems of uneven display brightness and discontinuous picture can be improved.

本發明的一種顯示裝置具有顯示區以及多個非顯示區。顯示裝置包括基板、多個畫素單元、多條第一閘極線、多條第二閘極線、多條第一資料線、多條第二資料線及多個電容補償結構。畫素單元矩陣排列於基板上且位於顯示區中。第一閘極線與第二閘極線於基板上配置成列且位於顯示區中。第一資料線與第二資料線於基板上配置成行且位於顯示區中。電容補償結構矩陣排列於非顯示區中。電容補償結構包括部份第二閘極線、絕緣層、半導體層及部份第二資料線。絕緣層配置於部份第二閘極線上。半導體層配置於絕緣層上。部份第二資料線配置於半導體層上。部份第二資料線與部份第二閘極線分別位於半導體層的相對兩側。A display device of the present invention has a display area and a plurality of non-display areas. The display device includes a substrate, multiple pixel units, multiple first gate lines, multiple second gate lines, multiple first data lines, multiple second data lines, and multiple capacitance compensation structures. The pixel unit matrix is arranged on the substrate and located in the display area. The first gate line and the second gate line are arranged in a row on the substrate and located in the display area. The first data line and the second data line are arranged in a row on the substrate and located in the display area. The capacitance compensation structure matrix is arranged in the non-display area. The capacitance compensation structure includes part of the second gate line, insulating layer, semiconductor layer and part of the second data line. The insulating layer is disposed on part of the second gate line. The semiconductor layer is disposed on the insulating layer. Part of the second data line is disposed on the semiconductor layer. Part of the second data line and part of the second gate line are respectively located on opposite sides of the semiconductor layer.

本發明的一種補償電容的操作方法,利用上述的顯示裝置,而操作方法包括以下步驟。當第二閘極線的閘極負載相較於第一閘極線的閘極負載大時,藉由增加電容補償結構中的第二資料線的電位,以降低補償電容及第二閘極線的總電容。當第二閘極線的閘極負載相較於第一閘極線的閘極負載小時,藉由降低電容補償結構中的第二資料線的電位,以增加補償電容及第二閘極線的總電容。當第二閘極線的電位下降時間相較於第一閘極線的電位下降時間慢時,藉由增加電容補償結構中的第二資料線的電位,以降低補償電容及第二閘極線的總電容。當第二閘極線的電位下降時間相較於第一閘極線的電位下降時間快時,藉由降低電容補償結構中的第二資料線的電位,以增加補償電容及第二閘極線的總電容。An operation method of a compensation capacitor of the present invention utilizes the above display device, and the operation method includes the following steps. When the gate load of the second gate line is larger than the gate load of the first gate line, the potential of the second data line in the capacitance compensation structure is increased to reduce the compensation capacitance and the second gate line Total capacitance. When the gate load of the second gate line is smaller than the gate load of the first gate line, by reducing the potential of the second data line in the capacitance compensation structure, the compensation capacitance and the second gate line are increased Total capacitance. When the potential drop time of the second gate line is slower than that of the first gate line, the potential of the second data line in the capacitance compensation structure is increased to reduce the compensation capacitance and the second gate line Total capacitance. When the potential drop time of the second gate line is faster than that of the first gate line, the compensation capacitor and the second gate line are increased by reducing the potential of the second data line in the capacitance compensation structure Total capacitance.

在上述實施例之一的顯示裝置,具有電容補償結構,可具有較均勻的顯示亮度,且可避免畫面不連續的問題。The display device in one of the above embodiments has a capacitance compensation structure, which can have a relatively uniform display brightness, and can avoid the problem of discontinuous pictures.

在上述實施例之一的補償電容的操作方法,可改善顯示亮度不均勻且畫面不連續的問題。In the operation method of the compensation capacitor in one of the above embodiments, the problems of uneven display brightness and discontinuous picture can be improved.

基於上述,本實施例的顯示裝置具有多個電容補償結構,排列於非顯示區中。電容補償結構包括部份第二閘極線、絕緣層、半導體層及部份第二資料線。其中,絕緣層配置於部份第二閘極線上,半導體層配置於絕緣層上,部份第二資料線配置於半導體層上,且部份第二資料線與部份第二閘極線分別位於半導體層的相對兩側。藉此設計,使得上述的顯示裝置可具有較均勻的顯示亮度且可避免畫面不連續的問題。Based on the above, the display device of this embodiment has multiple capacitance compensation structures arranged in the non-display area. The capacitance compensation structure includes part of the second gate line, insulating layer, semiconductor layer and part of the second data line. Wherein, the insulating layer is arranged on part of the second gate line, the semiconductor layer is arranged on the insulating layer, part of the second data line is arranged on the semiconductor layer, and part of the second data line and part of the second gate line are respectively Located on opposite sides of the semiconductor layer. With this design, the above-mentioned display device can have a relatively uniform display brightness and can avoid the problem of discontinuity in the picture.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

圖1A繪示為本發明一實施例的一種顯示裝置的俯視示意圖。圖1B繪示為圖1A中區域A的放大圖。圖1C繪示為圖1B中交叉重疊區R的放大圖。圖1D繪示為圖1C中沿Ⅰ-Ⅰ’剖線的剖面示意圖。FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. FIG. 1B is an enlarged view of the area A in FIG. 1A. FIG. 1C is an enlarged view of the crossover region R in FIG. 1B. FIG. 1D is a schematic cross-sectional view taken along line I-I' in FIG. 1C.

請同時參照圖1A與圖1B,在本實施例中,顯示裝置100具有顯示區101以及多個非顯示區102a、102b、102c、102d、102e。顯示裝置100包括基板110、多個畫素單元120、多條第一閘極線130、多條第二閘極線140、多條第一資料線150、多條第二資料線160及多個電容補償結構170。畫素單元120矩陣排列於基板110上且位於顯示區101中。第一閘極線130與第二閘極線140於基板110上配置成列且位於顯示區101中。第一資料線150與第二資料線160於基板110上配置成行且位於顯示區101中。電容補償結構170矩陣排列於非顯示區102a、102b、102c、102d、102e中(圖1B中示意地繪示出非顯示區102a中的多個電容補償結構170)。Please refer to FIGS. 1A and 1B at the same time. In this embodiment, the display device 100 has a display area 101 and a plurality of non-display areas 102a, 102b, 102c, 102d, and 102e. The display device 100 includes a substrate 110, a plurality of pixel units 120, a plurality of first gate lines 130, a plurality of second gate lines 140, a plurality of first data lines 150, a plurality of second data lines 160 and a plurality of Capacitance compensation structure 170. The pixel units 120 are arranged in a matrix on the substrate 110 and located in the display area 101. The first gate line 130 and the second gate line 140 are arranged in a row on the substrate 110 and are located in the display area 101. The first data line 150 and the second data line 160 are arranged in a row on the substrate 110 and are located in the display area 101. The capacitance compensation structures 170 are arranged in a matrix in the non-display areas 102a, 102b, 102c, 102d, and 102e (a plurality of capacitance compensation structures 170 in the non-display area 102a are schematically shown in FIG. 1B).

接著,請同時參照圖1C與圖1D,電容補償結構170包括部份第二閘極線140、絕緣層172、半導體層174及部份第二資料線160。絕緣層172配置於部份第二閘極線140上。半導體層174配置於絕緣層172上。部份第二資料線160配置於半導體層172上。部份第二資料線160與部份第二閘極線140分別位於半導體層174的相對兩側。在本實施例中,可藉由改變電容補償結構170的第二閘極線140(閘極G)和第二資料線160 (源極S)之間的電位差(VGS=閘極電位-源極電位),來決定電容補償結構170的半導體層174為導體或絕緣體,進而改變電容補償結構170的補償電容的大小。此處,半導體層174的材料包括單晶矽、多晶矽、非晶矽或其他適合的半導體材料。1C and FIG. 1D, the capacitance compensation structure 170 includes a part of the second gate line 140, an insulating layer 172, a semiconductor layer 174, and a part of the second data line 160. The insulating layer 172 is disposed on part of the second gate line 140. The semiconductor layer 174 is disposed on the insulating layer 172. Part of the second data line 160 is disposed on the semiconductor layer 172. Part of the second data line 160 and part of the second gate line 140 are respectively located on opposite sides of the semiconductor layer 174. In this embodiment, the potential difference between the second gate line 140 (gate G) and the second data line 160 (source S) of the capacitance compensation structure 170 can be changed (VGS=gate potential-source Potential) to determine whether the semiconductor layer 174 of the capacitance compensation structure 170 is a conductor or an insulator, thereby changing the size of the compensation capacitance of the capacitance compensation structure 170. Here, the material of the semiconductor layer 174 includes single crystal silicon, polycrystalline silicon, amorphous silicon, or other suitable semiconductor materials.

詳細來說,請再參照圖1A,在本實施例中,顯示裝置100的平面輪廓180具有圓角182或凹孔184。其中,非顯示區102a位於平面輪廓180的凹孔184外,且非顯示區102b、102c、102d、102e位於平面輪廓180的圓角182外。In detail, please refer to FIG. 1A again. In this embodiment, the planar profile 180 of the display device 100 has rounded corners 182 or concave holes 184. The non-display area 102a is located outside the concave hole 184 of the plane outline 180, and the non-display area 102b, 102c, 102d, 102e is located outside the rounded corner 182 of the plane outline 180.

此外,在本實施例中,第一閘極線130、第二閘極線140、第一資料線150以及第二資料線160分別電性連接於畫素單元120。其中,由於第二閘極線140會延伸至圓角182外或凹孔184外的非顯示區102a、102b、102c、102d、102e中,使得與第二閘極線140電性連接的畫素單元120的數量相較於與第一閘極線130電性連接的畫素單元120的數量少。In addition, in this embodiment, the first gate line 130, the second gate line 140, the first data line 150, and the second data line 160 are electrically connected to the pixel unit 120, respectively. Wherein, since the second gate line 140 extends into the non-display areas 102a, 102b, 102c, 102d, and 102e outside the rounded corner 182 or the concave hole 184, the pixels electrically connected to the second gate line 140 The number of cells 120 is smaller than the number of pixel cells 120 electrically connected to the first gate line 130.

具體來說,在本實施例中,第二閘極線140與第二資料線160可分別延伸至非顯示區102a、102b、102c、102d、102e中,並在非顯示區102a、102b、102c、102d、102e中互相交叉重疊,因而形成多個交叉重疊區R,如圖1B所示。其中,電容補償結構170位於交叉重疊區R中。換言之,在第二閘極線140與第二資料線160互相交叉重疊所形成的多個交叉重疊區R中,具有電容補償結構170。Specifically, in this embodiment, the second gate line 140 and the second data line 160 may extend into the non-display areas 102a, 102b, 102c, 102d, and 102e, respectively, and in the non-display areas 102a, 102b, 102c , 102d, and 102e cross and overlap each other, thereby forming a plurality of cross-overlap regions R, as shown in FIG. 1B. Among them, the capacitance compensation structure 170 is located in the cross overlapping region R. In other words, in the plurality of overlapping regions R formed by the second gate line 140 and the second data line 160 crossing and overlapping each other, there is a capacitance compensation structure 170.

簡言之,本實施例的顯示裝置100具有多個電容補償結構170,排列於非顯示區102a、102b、102c、102d、102e中。電容補償結構170包括部份第二閘極線140、絕緣層172、半導體層174及部份第二資料線160。其中,絕緣層172配置於部份第二閘極線140上,半導體層174配置於絕緣層172上,部份第二資料線160配置於半導體層174上,且部份第二資料線160與部份第二閘極線140分別位於半導體層174的相對兩側。藉此設計,使得本實施例的顯示裝置100可具有較均勻的顯示亮度且可避免畫面不連續的問題。In short, the display device 100 of this embodiment has a plurality of capacitance compensation structures 170 arranged in the non-display areas 102a, 102b, 102c, 102d, 102e. The capacitance compensation structure 170 includes a portion of the second gate line 140, an insulating layer 172, a semiconductor layer 174, and a portion of the second data line 160. Among them, the insulating layer 172 is disposed on part of the second gate line 140, the semiconductor layer 174 is disposed on the insulating layer 172, part of the second data line 160 is disposed on the semiconductor layer 174, and part of the second data line 160 and Part of the second gate lines 140 are located on opposite sides of the semiconductor layer 174, respectively. With this design, the display device 100 of this embodiment can have a relatively uniform display brightness and can avoid the problem of discontinuity in the picture.

以下將列舉其他實施例以作為說明,並說明如何利用具有電容補償結構的顯示裝置來進行補償電容的操作方法。在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。The following will list other embodiments as an explanation, and explain how to use a display device having a capacitance compensation structure to perform a compensation capacitor operation method. It must be noted here that the following embodiments follow the element numbers and partial contents of the foregoing embodiments, wherein the same reference numbers are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

圖2A繪示為本發明一實施例的一種補償電容的操作方法的示意圖。請參照圖2A,在本實施例的補償電容的操作方法中,包括顯示裝置100a、高速攝影機200、電腦210以及點亮治具220等。電腦210電性連接至高速攝影機200與點亮治具220。高速攝影機200可拍攝顯示裝置100a上的每一個畫素單元120的閃爍量,並將拍攝結果傳輸至連接至電腦210。點亮治具220還可電性連接至顯示裝置100a上的驅動元件190以驅動顯示裝置100a。2A is a schematic diagram of an operation method of a compensation capacitor according to an embodiment of the invention. Referring to FIG. 2A, the operation method of the compensation capacitor in this embodiment includes the display device 100a, the high-speed camera 200, the computer 210, and the lighting fixture 220. The computer 210 is electrically connected to the high-speed camera 200 and the lighting fixture 220. The high-speed camera 200 can capture the amount of flicker of each pixel unit 120 on the display device 100a, and transmit the result of the capture to the computer 210. The lighting fixture 220 can also be electrically connected to the driving element 190 on the display device 100a to drive the display device 100a.

在本實施例中,顯示裝置100a與圖1A的顯示裝置100相同,於是,當顯示裝置100a開啟時,由於顯示裝置100a上的毎一條第二閘極線140上的畫素單元120的閃爍量可能大於或小於第一閘極線130上的畫素單元120的閃爍量,因而造成顯示裝置100a有顯示亮度不均勻且畫面不連續的問題。因此,針對這樣的問題,可利用本實施例的補償電容的操作方法來對毎一條第二閘極線140所對應的電容補償結構170進行調整如下。In this embodiment, the display device 100a is the same as the display device 100 of FIG. 1A. Therefore, when the display device 100a is turned on, due to the amount of flicker of the pixel unit 120 on each second gate line 140 on the display device 100a It may be larger or smaller than the flicker amount of the pixel unit 120 on the first gate line 130, thus causing the display device 100a to have uneven display brightness and discontinuous picture. Therefore, in response to such a problem, the operation method of the compensation capacitor in this embodiment can be used to adjust the capacitance compensation structure 170 corresponding to each second gate line 140 as follows.

當高速攝影機200偵測到第二閘極線140上的畫素單元120的閃爍量大於第一閘極線130上的畫素單元120的閃爍量,且第二閘極線140的閘極負載相較於第一閘極線130的閘極負載大時,可在第二閘極線140的電位下降之前,藉由增加電容補償結構170中的第二資料線160的電位,例如是增加2V~3V,又例如是使第二資料線160的電位從負電位變成為正電位,以減少電容補償結構170的VGS、降低電容補償結構170的補償電容以及降低第二閘極線140的總電容。具體來說,由於毎條第二閘極線140對應有多個電容補償結構170以及多條第二資料線160,因此,可針對毎條第二閘極線140上的毎個電容補償結構170中的第二資料線160的電位進行調整,以增加補償電容的第二資料線160為正電位的條數,以使調整後的電容補償結構170的補償電容降低且使第二閘極線140的總電容降低,進而使得調整後的第二閘極線140上的畫素單元120的閃爍量降低,如圖2B所示。When the high-speed camera 200 detects that the amount of flicker of the pixel unit 120 on the second gate line 140 is greater than the amount of flicker of the pixel unit 120 on the first gate line 130, and the gate load of the second gate line 140 is Compared to when the gate load of the first gate line 130 is large, the potential of the second data line 160 in the capacitance compensation structure 170 can be increased by, for example, 2V before the potential of the second gate line 140 decreases. ~3V, for example, to change the potential of the second data line 160 from a negative potential to a positive potential to reduce the VGS of the capacitance compensation structure 170, reduce the compensation capacitance of the capacitance compensation structure 170, and reduce the total capacitance of the second gate line 140 . Specifically, since each second gate line 140 corresponds to a plurality of capacitance compensation structures 170 and a plurality of second data lines 160, each capacitance compensation structure 170 on each second gate line 140 can be targeted The potential of the second data line 160 in is adjusted to increase the number of positive potentials of the second data line 160 of the compensation capacitor, so that the compensation capacitance of the adjusted capacitance compensation structure 170 is reduced and the second gate line 140 The total capacitance of is reduced, which in turn reduces the flicker amount of the pixel unit 120 on the adjusted second gate line 140, as shown in FIG. 2B.

反之,當高速攝影機200偵測到第二閘極線140上的畫素單元120的閃爍量大於第一閘極線130上的畫素單元120的閃爍量,且第二閘極線140的閘極負載相較於第一閘極線130的閘極負載小時,可在第二閘極線140的電位下降之前,藉由降低電容補償結構170中的第二資料線160的電位,以增加電容補償結構170的VGS、增加電容補償結構170的補償電容以及增加第二閘極線140的總電容。換言之,可減少補償電容的第二資料線160為正電位的條數,以使調整後的電容補償結構170的補償電容增加且使第二閘極線140的總電容增加,進而使得調整後的第二閘極線140上的畫素單元120的閃爍量降低,如圖2C所示。Conversely, when the high-speed camera 200 detects that the amount of flicker of the pixel unit 120 on the second gate line 140 is greater than the amount of flicker of the pixel unit 120 on the first gate line 130, and the gate of the second gate line 140 The pole load is smaller than the gate load of the first gate line 130. Before the potential of the second gate line 140 decreases, the capacitance of the second data line 160 in the capacitance compensation structure 170 can be reduced to increase the capacitance The VGS of the compensation structure 170, the compensation capacitance of the capacitance compensation structure 170 is increased, and the total capacitance of the second gate line 140 is increased. In other words, the number of the second data lines 160 of the compensation capacitor at a positive potential can be reduced, so that the compensation capacitance of the adjusted capacitance compensation structure 170 increases and the total capacitance of the second gate line 140 increases, thereby making the adjusted The amount of flicker of the pixel unit 120 on the second gate line 140 is reduced, as shown in FIG. 2C.

接著,在獲得毎一條第二閘極線140的毎個電容補償結構170所對應的第二資料線160的電位的調整條件之後,則可將這些調整條件燒錄到驅動元件190中,以使經由本實施例的補償電容的操作方法調整後的顯示裝置100a,可具有較均勻的顯示亮度且可避免畫面不連續的問題。Then, after obtaining the adjustment conditions of the potential of the second data line 160 corresponding to each capacitance compensation structure 170 of each second gate line 140, these adjustment conditions can be burned into the driving element 190, so that The display device 100a adjusted by the operation method of the compensation capacitor of this embodiment can have a relatively uniform display brightness and can avoid the problem of discontinuous pictures.

圖3A繪示為本發明另一實施例的一種補償電容的操作方法。請參照圖3A,在本實施例的補償電容的操作方法中,顯示裝置100b可包括多個第二閘極線G1~G8,且第二閘極線G1~G8依序排列於顯示裝置100b中。接著,並聯設置多個電晶體T1、T3、T5、T7,使第二閘極線G1、G3、G5、G7分別電性連接至對應的毎一個電晶體T1、T3、T5、T7的閘極,並使電晶體T1、T3、T5、T7的一端連接低電位310,使電晶體T1、T3、T5、T7的另一端(輸出端)連接至波型偵測元件320以及另一個電晶體T(A)。此時,電晶體T(A)的一端連接高電位330並使電晶體T(A)的Vgs=0。FIG. 3A illustrates an operation method of a compensation capacitor according to another embodiment of the invention. Please refer to FIG. 3A. In the compensation capacitor operation method of this embodiment, the display device 100b may include a plurality of second gate lines G1~G8, and the second gate lines G1~G8 are sequentially arranged in the display device 100b . Next, multiple transistors T1, T3, T5, T7 are arranged in parallel, so that the second gate lines G1, G3, G5, G7 are electrically connected to the corresponding gates of each transistor T1, T3, T5, T7, respectively , And one end of the transistors T1, T3, T5, T7 is connected to the low potential 310, and the other end (output end) of the transistors T1, T3, T5, T7 is connected to the wave detection element 320 and another transistor T (A). At this time, one end of the transistor T(A) is connected to the high potential 330 and Vgs of the transistor T(A)=0.

類似上述的方式,並聯設置多個電晶體T2、T4、T6、T8,使第二閘極線G2、G4、G6、G8分別電性連接至對應的毎一個電晶體T2、T4、T6、T8的閘極,並使電晶體T2、T4、T6、T8的一端連接低電位310a,使電晶體T2、T4、T6、T8的另一端(輸出端)連接至波型偵測元件320a以及另一個電晶體T(B)。此時,電晶體T(B)的一端連接高電位330a並使電晶體T(B)的Vgs=0。Similar to the above method, multiple transistors T2, T4, T6, and T8 are arranged in parallel, so that the second gate lines G2, G4, G6, and G8 are electrically connected to the corresponding transistors T2, T4, T6, and T8, respectively. And connect one end of the transistors T2, T4, T6, T8 to the low potential 310a, and the other end (output end) of the transistors T2, T4, T6, T8 to the wave detection element 320a and the other Transistor T(B). At this time, one end of the transistor T(B) is connected to the high potential 330a and Vgs of the transistor T(B)=0.

於是,毎一個第二閘極線G1~G8的訊號可透過與其電性連接的電晶體T1~T8的另一端(輸出端)來產生出放大的訊號,再藉由波型偵測元件320、320a來顯示出其波型,如圖3B所示。Therefore, the signal of each second gate line G1~G8 can generate an amplified signal through the other end (output end) of the transistors T1~T8 electrically connected thereto, and then the wave detection element 320, 320a to show its wave pattern, as shown in Figure 3B.

請參照圖3B,圖中的實線為理想的電位變化(可視為第一閘極線的電位變化),虛線為第二閘極線G1、G3、G5實際的電位變化。由圖3B可知,由於第二閘極線G1、G3的電位下降時間相較於理想的電位(第一閘極線130的電位)的下降時間慢,因此,可在下個幀(frame)於第二閘極線G1、G3關閉前,藉由增加電容補償結構170中的第二資料線160的電位(或是增加補償電容的第二資料線160為正電位的條數和減少補償電容的第二資料線160為負電位的條數),以降低電容補償結構170的補償電容及第二閘極線G1、G3的總電容。Please refer to FIG. 3B, the solid line in the figure is the ideal potential change (can be regarded as the potential change of the first gate line), and the dotted line is the actual potential change of the second gate line G1, G3, G5. As can be seen from FIG. 3B, since the fall time of the potential of the second gate lines G1 and G3 is slower than the fall time of the ideal potential (the potential of the first gate line 130), it can be Before the two gate lines G1 and G3 are turned off, by increasing the potential of the second data line 160 in the capacitance compensation structure 170 (or increasing the number of the second data line 160 of the compensation capacitor to a positive potential and reducing the number of the compensation capacitor The two data lines 160 are the number of negative potentials) to reduce the compensation capacitance of the capacitance compensation structure 170 and the total capacitance of the second gate lines G1 and G3.

此外,由於第二閘極線G5的電位下降時間相較於理想的電位(第一閘極線130的電位)的下降時間快時,因此,可在下個幀(frame)於第二閘極G5關閉前,藉由降低電容補償結構170中的第二資料線160的電位(或是減少補償電容的第二資料線160為正電位的條數和增加補償電容的第二資料線160為負電位的條數),以增加電容補償結構170的補償電容及第二閘極線G5的總電容。In addition, since the fall time of the potential of the second gate line G5 is faster than the fall time of the ideal potential (the potential of the first gate line 130), the second gate G5 can be framed in the next frame Before closing, by reducing the potential of the second data line 160 in the capacitance compensation structure 170 (or reducing the number of the second data line 160 of the compensation capacitor to a positive potential and the second data line 160 increasing the compensation capacitor to a negative potential To increase the compensation capacitance of the capacitance compensation structure 170 and the total capacitance of the second gate line G5.

綜上所述,在本實施例的顯示裝置及補償電容的操作方法中,由於顯示裝置的非顯示區中具有多個電容補償結構,且電容補償結構包括部份第二閘極線、絕緣層、半導體層及部份第二資料線。因此,當第二閘極線的閘極負載相較於第一閘極線的閘極負載大(或小)時,可藉由增加(或降低)電容補償結構中的第二資料線的電位,以降低(或增加)補償電容及第二閘極線的總電容。當第二閘極線的電位下降時間相較於第一閘極線的電位下降時間慢(或快)時,可藉由增加(或降低)電容補償結構中的第二資料線的電位,以降低(或增加)補償電容及第二閘極線的總電容。藉此設計,使得本實施例的顯示裝置可具有較均勻的顯示亮度且可避免畫面不連續的問題,並可利用本實施例的補償電容的操作方法改善顯示亮度不均勻且畫面不連續的問題。In summary, in the display device and the operation method of the compensation capacitor of this embodiment, since the display device has multiple capacitance compensation structures in the non-display area, and the capacitance compensation structure includes a portion of the second gate line and the insulating layer , Semiconductor layer and part of the second data line. Therefore, when the gate load of the second gate line is larger (or smaller) than the gate load of the first gate line, the potential of the second data line in the structure can be compensated for by increasing (or decreasing) To reduce (or increase) the compensation capacitance and the total capacitance of the second gate line. When the potential drop time of the second gate line is slower (or faster) than the potential drop time of the first gate line, the potential of the second data line in the structure can be compensated by increasing (or decreasing) to Reduce (or increase) the compensation capacitance and the total capacitance of the second gate line. With this design, the display device of this embodiment can have a more uniform display brightness and can avoid the problem of discontinuity of the picture, and the operation method of the compensation capacitor of this embodiment can be used to improve the problem of uneven display brightness and the discontinuity of the picture .

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100、100a、100b‧‧‧顯示裝置101‧‧‧顯示區102a、102b、102c、102d、102e‧‧‧非顯示區110‧‧‧基板120‧‧‧畫素單元130‧‧‧第一閘極線140、G1、G2、G3、G4、G5、G6、G7、G8‧‧‧第二閘極線150‧‧‧第一資料線160‧‧‧第二資料線170‧‧‧電容補償結構172‧‧‧絕緣層174‧‧‧半導體層180‧‧‧平面輪廓182‧‧‧圓角184‧‧‧凹孔190‧‧‧驅動元件200‧‧‧高速攝影機210‧‧‧電腦220‧‧‧點亮治具310、310a‧‧‧低電位320、320a‧‧‧波型偵測元件330、330a‧‧‧高電位A‧‧‧區域G‧‧‧閘極R‧‧‧交叉重疊區S‧‧‧源極T1、T2、T3、T4、T5、T6、T7、T8、T(A)、T(B)‧‧‧電晶體100, 100a, 100b ‧‧‧ display device 101‧‧‧ display area 102a, 102b, 102c, 102d, 102e ‧‧‧ non-display area 110‧‧‧ substrate 120‧‧‧ pixel unit 130‧‧‧ first gate Polar line 140, G1, G2, G3, G4, G5, G6, G7, G8 ‧‧‧ second gate line 150‧‧‧ first data line 160‧‧‧ second data line 170‧‧‧ capacitance compensation structure 172‧‧‧Insulation layer 174‧‧‧Semiconductor layer 180‧‧‧ Plane profile 182‧‧‧Fillet 184‧‧‧Concave hole 190‧‧‧Drive element 200‧‧‧High speed camera 210‧‧‧‧Computer 220‧‧ ‧Lighting fixture 310, 310a ‧‧‧ Low potential 320, 320a ‧‧‧ Wave type detection element 330, 330a ‧‧‧ High potential A‧‧‧Region G‧‧‧Gate R‧‧‧ Crossover area S‧‧‧Source T1, T2, T3, T4, T5, T6, T7, T8, T(A), T(B)‧‧‧‧Transistor

圖1A繪示為本發明一實施例的一種顯示裝置的俯視示意圖。 圖1B繪示為圖1A中區域A的放大圖。 圖1C繪示為圖1B中交叉重疊區R的放大圖。 圖1D繪示為圖1C中沿Ⅰ-Ⅰ’剖線的剖面示意圖。 圖2A繪示為本發明一實施例的一種補償電容的操作方法的示意圖。 圖2B與圖2C繪示為圖2A的補償電容的操作方法的應用。 圖3A繪示為本發明另一實施例的一種補償電容的操作方法的示意圖。 圖3B繪示為圖3A的補償電容的操作方法的應用。FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. FIG. 1B is an enlarged view of the area A in FIG. 1A. FIG. 1C is an enlarged view of the crossover region R in FIG. 1B. FIG. 1D is a schematic cross-sectional view taken along line I-I' in FIG. 1C. 2A is a schematic diagram of an operation method of a compensation capacitor according to an embodiment of the invention. 2B and 2C illustrate the application of the operation method of the compensation capacitor of FIG. 2A. 3A is a schematic diagram of an operation method of a compensation capacitor according to another embodiment of the invention. FIG. 3B illustrates the application of the operation method of the compensation capacitor of FIG. 3A.

140‧‧‧第二閘極線 140‧‧‧Second gate line

160‧‧‧第二資料線 160‧‧‧Second data line

170‧‧‧電容補償結構 170‧‧‧capacity compensation structure

172‧‧‧絕緣層 172‧‧‧Insulation

174‧‧‧半導體層 174‧‧‧semiconductor layer

G‧‧‧閘極 G‧‧‧Gate

S‧‧‧源極 S‧‧‧Source

Claims (7)

一種顯示裝置,具有一顯示區以及多個非顯示區,該顯示裝置包括: 基板; 多個畫素單元,矩陣排列於該基板上且位於該顯示區中; 多條第一閘極線與多條第二閘極線,於該基板上配置成列且位於該顯示區中; 多條第一資料線與多條第二資料線,於該基板上配置成行且位於該顯示區中; 多個電容補償結構,矩陣排列於該些非顯示區中,各該電容補償結構包括: 部份該第二閘極線; 一絕緣層,配置於部份該第二閘極線上; 一半導體層,配置於該絕緣層上;以及 部份該第二資料線,配置於該半導體層上,其中部份該第二資料線與部份該第二閘極線分別位於該半導體層的相對兩側。A display device has a display area and a plurality of non-display areas. The display device includes: a substrate; a plurality of pixel units, arranged in a matrix on the substrate and located in the display area; a plurality of first gate lines and a plurality of A plurality of second gate lines arranged in a row on the substrate and located in the display area; a plurality of first data lines and a plurality of second data lines arranged in a row on the substrate and located in the display area; a plurality Capacitance compensation structure, the matrix is arranged in the non-display areas, each of the capacitance compensation structure includes: part of the second gate line; an insulating layer arranged on part of the second gate line; a semiconductor layer, arranged On the insulating layer; and part of the second data line is disposed on the semiconductor layer, wherein part of the second data line and part of the second gate line are respectively located on opposite sides of the semiconductor layer. 如申請專利範圍第1項所述的顯示裝置,其中該顯示裝置的一平面輪廓具有一圓角或一凹孔,且該些非顯示區位於該平面輪廓的該圓角外或該凹孔外。The display device as described in item 1 of the patent application range, wherein a flat outline of the display device has a rounded corner or a concave hole, and the non-display areas are located outside the rounded corner or the concave hole of the flat outline. 如申請專利範圍第1項所述的顯示裝置,其中該些第一閘極線、該些第二閘極線、該些第一資料線以及該些第二資料線分別電性連接於該些畫素單元,其中該些第二閘極線電性連接的該些畫素單元的數量相較於該些第一閘極線電性連接的該些畫素單元的數量少。The display device according to item 1 of the patent application scope, wherein the first gate lines, the second gate lines, the first data lines, and the second data lines are electrically connected to the respective ones For pixel units, the number of the pixel units electrically connected by the second gate lines is smaller than the number of the pixel units electrically connected by the first gate lines. 如申請專利範圍第1項所述的顯示裝置,其中該些第二閘極線與該些第二資料線分別延伸至該些非顯示區中並互相交叉重疊,而具有多個交叉重疊區。The display device as described in item 1 of the patent application scope, wherein the second gate lines and the second data lines extend into the non-display areas and overlap each other, and have a plurality of overlapping overlapping areas. 如申請專利範圍第4項所述的顯示裝置,其中該些電容補償結構位於該些交叉重疊區。The display device as described in item 4 of the patent application scope, wherein the capacitance compensation structures are located in the overlapping areas. 如申請專利範圍第1項所述的顯示裝置,其中該半導體層包括單晶矽、多晶矽或非晶矽。The display device as described in item 1 of the patent application range, wherein the semiconductor layer comprises single crystal silicon, polycrystalline silicon or amorphous silicon. 一種補償電容的操作方法,利用如申請專利範圍第1項所述的顯示裝置,而該操作方法包括: 當該些第二閘極線的閘極負載相較於該些第一閘極線的閘極負載大時,藉由增加該些電容補償結構中的該些第二資料線的一電位,以降低補償電容及該些第二閘極線的總電容; 當該些第二閘極線的閘極負載相較於該些第一閘極線的閘極負載小時,藉由降低該些電容補償結構中的該些第二資料線的該電位,以增加補償電容及該些第二閘極線的總電容; 當該些第二閘極線的電位下降時間相較於該些第一閘極線的電位下降時間慢時,藉由增加該些電容補償結構中的該些第二資料線的該電位,以降低補償電容及該些第二閘極線的總電容; 當該些第二閘極線的電位下降時間相較於該些第一閘極線的電位下降時間快時,藉由降低該些電容補償結構中的該些第二資料線的該電位,以增加補償電容及該些第二閘極線的總電容。An operation method of a compensation capacitor, using the display device as described in item 1 of the patent application scope, and the operation method includes: when the gate loads of the second gate lines are compared to those of the first gate lines When the gate load is large, by increasing a potential of the second data lines in the capacitance compensation structures, the compensation capacitance and the total capacitance of the second gate lines are reduced; when the second gate lines The gate load of is smaller than the gate load of the first gate lines, and by reducing the potential of the second data lines in the capacitance compensation structures, the compensation capacitance and the second gates are increased The total capacitance of the pole lines; when the potential drop times of the second gate lines are slower than the potential drop times of the first gate lines, the second data in the capacitance compensation structure is added by increasing the capacitance The potential of the line to reduce the compensation capacitance and the total capacitance of the second gate lines; when the potential decline time of the second gate lines is faster than that of the first gate lines, By reducing the potential of the second data lines in the capacitance compensation structures, the compensation capacitance and the total capacitance of the second gate lines are increased.
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