TW202009908A - Display device and compensation capacitor operating method - Google Patents
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- 239000003990 capacitor Substances 0.000 title claims abstract description 28
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
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- 238000009413 insulation Methods 0.000 description 2
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Abstract
Description
本發明是有關於一種顯示裝置,且特別是有關於一種具有電容補償結構的顯示裝置以及補償電容的操作方法。The present invention relates to a display device, and more particularly to a display device with a capacitance compensation structure and a method of operating a compensation capacitor.
目前,在具有液晶顯示裝置的電子產品(例如:手機)中,常會在其液晶顯示裝置的上方中心設置有凹孔(notch),以放置相機或感測器;甚至還會將其液晶顯示裝置的四個角做成圓角,以滿足消費者在電子產品外觀上的需求。然而,相較於液晶顯示裝置的其他區域,在凹孔和圓角處的閘極線上所對應的畫素數量比較少,因而使得在凹孔和圓角處的閘極線的閘極負載與其他區域的閘極線的閘極負載有所不同,進而造成液晶顯示裝置有顯示亮度不均勻且畫面不連續的問題。At present, in electronic products with liquid crystal display devices (such as mobile phones), a notch is often provided in the upper center of the liquid crystal display device to place the camera or sensor; even the liquid crystal display device The four corners are rounded to meet consumers' needs in the appearance of electronic products. However, compared to other areas of the liquid crystal display device, the number of pixels corresponding to the gate lines at the concave holes and rounded corners is relatively small, thus making the gate load of the gate lines at the concave holes and rounded corners The gate loads of the gate lines in other areas are different, which in turn causes the LCD display device to have uneven display brightness and discontinuous pictures.
本發明提供一種顯示裝置,包括有電容補償結構,可具有較均勻的顯示亮度,且可避免畫面不連續的問題。The present invention provides a display device including a capacitance compensation structure, which can have a relatively uniform display brightness, and can avoid the problem of discontinuous pictures.
本發明提供一種補償電容的操作方法,利用上述具有電容補償結構的顯示裝置,可改善顯示亮度不均勻且畫面不連續的問題。The invention provides an operation method of compensating capacitance. By using the above display device with capacitance compensation structure, the problems of uneven display brightness and discontinuous picture can be improved.
本發明的一種顯示裝置具有顯示區以及多個非顯示區。顯示裝置包括基板、多個畫素單元、多條第一閘極線、多條第二閘極線、多條第一資料線、多條第二資料線及多個電容補償結構。畫素單元矩陣排列於基板上且位於顯示區中。第一閘極線與第二閘極線於基板上配置成列且位於顯示區中。第一資料線與第二資料線於基板上配置成行且位於顯示區中。電容補償結構矩陣排列於非顯示區中。電容補償結構包括部份第二閘極線、絕緣層、半導體層及部份第二資料線。絕緣層配置於部份第二閘極線上。半導體層配置於絕緣層上。部份第二資料線配置於半導體層上。部份第二資料線與部份第二閘極線分別位於半導體層的相對兩側。A display device of the present invention has a display area and a plurality of non-display areas. The display device includes a substrate, multiple pixel units, multiple first gate lines, multiple second gate lines, multiple first data lines, multiple second data lines, and multiple capacitance compensation structures. The pixel unit matrix is arranged on the substrate and located in the display area. The first gate line and the second gate line are arranged in a row on the substrate and located in the display area. The first data line and the second data line are arranged in a row on the substrate and located in the display area. The capacitance compensation structure matrix is arranged in the non-display area. The capacitance compensation structure includes part of the second gate line, insulating layer, semiconductor layer and part of the second data line. The insulating layer is disposed on part of the second gate line. The semiconductor layer is disposed on the insulating layer. Part of the second data line is disposed on the semiconductor layer. Part of the second data line and part of the second gate line are respectively located on opposite sides of the semiconductor layer.
本發明的一種補償電容的操作方法,利用上述的顯示裝置,而操作方法包括以下步驟。當第二閘極線的閘極負載相較於第一閘極線的閘極負載大時,藉由增加電容補償結構中的第二資料線的電位,以降低補償電容及第二閘極線的總電容。當第二閘極線的閘極負載相較於第一閘極線的閘極負載小時,藉由降低電容補償結構中的第二資料線的電位,以增加補償電容及第二閘極線的總電容。當第二閘極線的電位下降時間相較於第一閘極線的電位下降時間慢時,藉由增加電容補償結構中的第二資料線的電位,以降低補償電容及第二閘極線的總電容。當第二閘極線的電位下降時間相較於第一閘極線的電位下降時間快時,藉由降低電容補償結構中的第二資料線的電位,以增加補償電容及第二閘極線的總電容。An operation method of a compensation capacitor of the present invention utilizes the above display device, and the operation method includes the following steps. When the gate load of the second gate line is larger than the gate load of the first gate line, the potential of the second data line in the capacitance compensation structure is increased to reduce the compensation capacitance and the second gate line Total capacitance. When the gate load of the second gate line is smaller than the gate load of the first gate line, by reducing the potential of the second data line in the capacitance compensation structure, the compensation capacitance and the second gate line are increased Total capacitance. When the potential drop time of the second gate line is slower than that of the first gate line, the potential of the second data line in the capacitance compensation structure is increased to reduce the compensation capacitance and the second gate line Total capacitance. When the potential drop time of the second gate line is faster than that of the first gate line, the compensation capacitor and the second gate line are increased by reducing the potential of the second data line in the capacitance compensation structure Total capacitance.
在上述實施例之一的顯示裝置,具有電容補償結構,可具有較均勻的顯示亮度,且可避免畫面不連續的問題。The display device in one of the above embodiments has a capacitance compensation structure, which can have a relatively uniform display brightness, and can avoid the problem of discontinuous pictures.
在上述實施例之一的補償電容的操作方法,可改善顯示亮度不均勻且畫面不連續的問題。In the operation method of the compensation capacitor in one of the above embodiments, the problems of uneven display brightness and discontinuous picture can be improved.
基於上述,本實施例的顯示裝置具有多個電容補償結構,排列於非顯示區中。電容補償結構包括部份第二閘極線、絕緣層、半導體層及部份第二資料線。其中,絕緣層配置於部份第二閘極線上,半導體層配置於絕緣層上,部份第二資料線配置於半導體層上,且部份第二資料線與部份第二閘極線分別位於半導體層的相對兩側。藉此設計,使得上述的顯示裝置可具有較均勻的顯示亮度且可避免畫面不連續的問題。Based on the above, the display device of this embodiment has multiple capacitance compensation structures arranged in the non-display area. The capacitance compensation structure includes part of the second gate line, insulating layer, semiconductor layer and part of the second data line. Wherein, the insulating layer is arranged on part of the second gate line, the semiconductor layer is arranged on the insulating layer, part of the second data line is arranged on the semiconductor layer, and part of the second data line and part of the second gate line are respectively Located on opposite sides of the semiconductor layer. With this design, the above-mentioned display device can have a relatively uniform display brightness and can avoid the problem of discontinuity in the picture.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.
圖1A繪示為本發明一實施例的一種顯示裝置的俯視示意圖。圖1B繪示為圖1A中區域A的放大圖。圖1C繪示為圖1B中交叉重疊區R的放大圖。圖1D繪示為圖1C中沿Ⅰ-Ⅰ’剖線的剖面示意圖。FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. FIG. 1B is an enlarged view of the area A in FIG. 1A. FIG. 1C is an enlarged view of the crossover region R in FIG. 1B. FIG. 1D is a schematic cross-sectional view taken along line I-I' in FIG. 1C.
請同時參照圖1A與圖1B,在本實施例中,顯示裝置100具有顯示區101以及多個非顯示區102a、102b、102c、102d、102e。顯示裝置100包括基板110、多個畫素單元120、多條第一閘極線130、多條第二閘極線140、多條第一資料線150、多條第二資料線160及多個電容補償結構170。畫素單元120矩陣排列於基板110上且位於顯示區101中。第一閘極線130與第二閘極線140於基板110上配置成列且位於顯示區101中。第一資料線150與第二資料線160於基板110上配置成行且位於顯示區101中。電容補償結構170矩陣排列於非顯示區102a、102b、102c、102d、102e中(圖1B中示意地繪示出非顯示區102a中的多個電容補償結構170)。Please refer to FIGS. 1A and 1B at the same time. In this embodiment, the
接著,請同時參照圖1C與圖1D,電容補償結構170包括部份第二閘極線140、絕緣層172、半導體層174及部份第二資料線160。絕緣層172配置於部份第二閘極線140上。半導體層174配置於絕緣層172上。部份第二資料線160配置於半導體層172上。部份第二資料線160與部份第二閘極線140分別位於半導體層174的相對兩側。在本實施例中,可藉由改變電容補償結構170的第二閘極線140(閘極G)和第二資料線160 (源極S)之間的電位差(VGS=閘極電位-源極電位),來決定電容補償結構170的半導體層174為導體或絕緣體,進而改變電容補償結構170的補償電容的大小。此處,半導體層174的材料包括單晶矽、多晶矽、非晶矽或其他適合的半導體材料。1C and FIG. 1D, the
詳細來說,請再參照圖1A,在本實施例中,顯示裝置100的平面輪廓180具有圓角182或凹孔184。其中,非顯示區102a位於平面輪廓180的凹孔184外,且非顯示區102b、102c、102d、102e位於平面輪廓180的圓角182外。In detail, please refer to FIG. 1A again. In this embodiment, the
此外,在本實施例中,第一閘極線130、第二閘極線140、第一資料線150以及第二資料線160分別電性連接於畫素單元120。其中,由於第二閘極線140會延伸至圓角182外或凹孔184外的非顯示區102a、102b、102c、102d、102e中,使得與第二閘極線140電性連接的畫素單元120的數量相較於與第一閘極線130電性連接的畫素單元120的數量少。In addition, in this embodiment, the
具體來說,在本實施例中,第二閘極線140與第二資料線160可分別延伸至非顯示區102a、102b、102c、102d、102e中,並在非顯示區102a、102b、102c、102d、102e中互相交叉重疊,因而形成多個交叉重疊區R,如圖1B所示。其中,電容補償結構170位於交叉重疊區R中。換言之,在第二閘極線140與第二資料線160互相交叉重疊所形成的多個交叉重疊區R中,具有電容補償結構170。Specifically, in this embodiment, the
簡言之,本實施例的顯示裝置100具有多個電容補償結構170,排列於非顯示區102a、102b、102c、102d、102e中。電容補償結構170包括部份第二閘極線140、絕緣層172、半導體層174及部份第二資料線160。其中,絕緣層172配置於部份第二閘極線140上,半導體層174配置於絕緣層172上,部份第二資料線160配置於半導體層174上,且部份第二資料線160與部份第二閘極線140分別位於半導體層174的相對兩側。藉此設計,使得本實施例的顯示裝置100可具有較均勻的顯示亮度且可避免畫面不連續的問題。In short, the
以下將列舉其他實施例以作為說明,並說明如何利用具有電容補償結構的顯示裝置來進行補償電容的操作方法。在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。The following will list other embodiments as an explanation, and explain how to use a display device having a capacitance compensation structure to perform a compensation capacitor operation method. It must be noted here that the following embodiments follow the element numbers and partial contents of the foregoing embodiments, wherein the same reference numbers are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖2A繪示為本發明一實施例的一種補償電容的操作方法的示意圖。請參照圖2A,在本實施例的補償電容的操作方法中,包括顯示裝置100a、高速攝影機200、電腦210以及點亮治具220等。電腦210電性連接至高速攝影機200與點亮治具220。高速攝影機200可拍攝顯示裝置100a上的每一個畫素單元120的閃爍量,並將拍攝結果傳輸至連接至電腦210。點亮治具220還可電性連接至顯示裝置100a上的驅動元件190以驅動顯示裝置100a。2A is a schematic diagram of an operation method of a compensation capacitor according to an embodiment of the invention. Referring to FIG. 2A, the operation method of the compensation capacitor in this embodiment includes the
在本實施例中,顯示裝置100a與圖1A的顯示裝置100相同,於是,當顯示裝置100a開啟時,由於顯示裝置100a上的毎一條第二閘極線140上的畫素單元120的閃爍量可能大於或小於第一閘極線130上的畫素單元120的閃爍量,因而造成顯示裝置100a有顯示亮度不均勻且畫面不連續的問題。因此,針對這樣的問題,可利用本實施例的補償電容的操作方法來對毎一條第二閘極線140所對應的電容補償結構170進行調整如下。In this embodiment, the
當高速攝影機200偵測到第二閘極線140上的畫素單元120的閃爍量大於第一閘極線130上的畫素單元120的閃爍量,且第二閘極線140的閘極負載相較於第一閘極線130的閘極負載大時,可在第二閘極線140的電位下降之前,藉由增加電容補償結構170中的第二資料線160的電位,例如是增加2V~3V,又例如是使第二資料線160的電位從負電位變成為正電位,以減少電容補償結構170的VGS、降低電容補償結構170的補償電容以及降低第二閘極線140的總電容。具體來說,由於毎條第二閘極線140對應有多個電容補償結構170以及多條第二資料線160,因此,可針對毎條第二閘極線140上的毎個電容補償結構170中的第二資料線160的電位進行調整,以增加補償電容的第二資料線160為正電位的條數,以使調整後的電容補償結構170的補償電容降低且使第二閘極線140的總電容降低,進而使得調整後的第二閘極線140上的畫素單元120的閃爍量降低,如圖2B所示。When the high-
反之,當高速攝影機200偵測到第二閘極線140上的畫素單元120的閃爍量大於第一閘極線130上的畫素單元120的閃爍量,且第二閘極線140的閘極負載相較於第一閘極線130的閘極負載小時,可在第二閘極線140的電位下降之前,藉由降低電容補償結構170中的第二資料線160的電位,以增加電容補償結構170的VGS、增加電容補償結構170的補償電容以及增加第二閘極線140的總電容。換言之,可減少補償電容的第二資料線160為正電位的條數,以使調整後的電容補償結構170的補償電容增加且使第二閘極線140的總電容增加,進而使得調整後的第二閘極線140上的畫素單元120的閃爍量降低,如圖2C所示。Conversely, when the high-
接著,在獲得毎一條第二閘極線140的毎個電容補償結構170所對應的第二資料線160的電位的調整條件之後,則可將這些調整條件燒錄到驅動元件190中,以使經由本實施例的補償電容的操作方法調整後的顯示裝置100a,可具有較均勻的顯示亮度且可避免畫面不連續的問題。Then, after obtaining the adjustment conditions of the potential of the
圖3A繪示為本發明另一實施例的一種補償電容的操作方法。請參照圖3A,在本實施例的補償電容的操作方法中,顯示裝置100b可包括多個第二閘極線G1~G8,且第二閘極線G1~G8依序排列於顯示裝置100b中。接著,並聯設置多個電晶體T1、T3、T5、T7,使第二閘極線G1、G3、G5、G7分別電性連接至對應的毎一個電晶體T1、T3、T5、T7的閘極,並使電晶體T1、T3、T5、T7的一端連接低電位310,使電晶體T1、T3、T5、T7的另一端(輸出端)連接至波型偵測元件320以及另一個電晶體T(A)。此時,電晶體T(A)的一端連接高電位330並使電晶體T(A)的Vgs=0。FIG. 3A illustrates an operation method of a compensation capacitor according to another embodiment of the invention. Please refer to FIG. 3A. In the compensation capacitor operation method of this embodiment, the
類似上述的方式,並聯設置多個電晶體T2、T4、T6、T8,使第二閘極線G2、G4、G6、G8分別電性連接至對應的毎一個電晶體T2、T4、T6、T8的閘極,並使電晶體T2、T4、T6、T8的一端連接低電位310a,使電晶體T2、T4、T6、T8的另一端(輸出端)連接至波型偵測元件320a以及另一個電晶體T(B)。此時,電晶體T(B)的一端連接高電位330a並使電晶體T(B)的Vgs=0。Similar to the above method, multiple transistors T2, T4, T6, and T8 are arranged in parallel, so that the second gate lines G2, G4, G6, and G8 are electrically connected to the corresponding transistors T2, T4, T6, and T8, respectively. And connect one end of the transistors T2, T4, T6, T8 to the low potential 310a, and the other end (output end) of the transistors T2, T4, T6, T8 to the
於是,毎一個第二閘極線G1~G8的訊號可透過與其電性連接的電晶體T1~T8的另一端(輸出端)來產生出放大的訊號,再藉由波型偵測元件320、320a來顯示出其波型,如圖3B所示。Therefore, the signal of each second gate line G1~G8 can generate an amplified signal through the other end (output end) of the transistors T1~T8 electrically connected thereto, and then the
請參照圖3B,圖中的實線為理想的電位變化(可視為第一閘極線的電位變化),虛線為第二閘極線G1、G3、G5實際的電位變化。由圖3B可知,由於第二閘極線G1、G3的電位下降時間相較於理想的電位(第一閘極線130的電位)的下降時間慢,因此,可在下個幀(frame)於第二閘極線G1、G3關閉前,藉由增加電容補償結構170中的第二資料線160的電位(或是增加補償電容的第二資料線160為正電位的條數和減少補償電容的第二資料線160為負電位的條數),以降低電容補償結構170的補償電容及第二閘極線G1、G3的總電容。Please refer to FIG. 3B, the solid line in the figure is the ideal potential change (can be regarded as the potential change of the first gate line), and the dotted line is the actual potential change of the second gate line G1, G3, G5. As can be seen from FIG. 3B, since the fall time of the potential of the second gate lines G1 and G3 is slower than the fall time of the ideal potential (the potential of the first gate line 130), it can be Before the two gate lines G1 and G3 are turned off, by increasing the potential of the
此外,由於第二閘極線G5的電位下降時間相較於理想的電位(第一閘極線130的電位)的下降時間快時,因此,可在下個幀(frame)於第二閘極G5關閉前,藉由降低電容補償結構170中的第二資料線160的電位(或是減少補償電容的第二資料線160為正電位的條數和增加補償電容的第二資料線160為負電位的條數),以增加電容補償結構170的補償電容及第二閘極線G5的總電容。In addition, since the fall time of the potential of the second gate line G5 is faster than the fall time of the ideal potential (the potential of the first gate line 130), the second gate G5 can be framed in the next frame Before closing, by reducing the potential of the
綜上所述,在本實施例的顯示裝置及補償電容的操作方法中,由於顯示裝置的非顯示區中具有多個電容補償結構,且電容補償結構包括部份第二閘極線、絕緣層、半導體層及部份第二資料線。因此,當第二閘極線的閘極負載相較於第一閘極線的閘極負載大(或小)時,可藉由增加(或降低)電容補償結構中的第二資料線的電位,以降低(或增加)補償電容及第二閘極線的總電容。當第二閘極線的電位下降時間相較於第一閘極線的電位下降時間慢(或快)時,可藉由增加(或降低)電容補償結構中的第二資料線的電位,以降低(或增加)補償電容及第二閘極線的總電容。藉此設計,使得本實施例的顯示裝置可具有較均勻的顯示亮度且可避免畫面不連續的問題,並可利用本實施例的補償電容的操作方法改善顯示亮度不均勻且畫面不連續的問題。In summary, in the display device and the operation method of the compensation capacitor of this embodiment, since the display device has multiple capacitance compensation structures in the non-display area, and the capacitance compensation structure includes a portion of the second gate line and the insulating layer , Semiconductor layer and part of the second data line. Therefore, when the gate load of the second gate line is larger (or smaller) than the gate load of the first gate line, the potential of the second data line in the structure can be compensated for by increasing (or decreasing) To reduce (or increase) the compensation capacitance and the total capacitance of the second gate line. When the potential drop time of the second gate line is slower (or faster) than the potential drop time of the first gate line, the potential of the second data line in the structure can be compensated by increasing (or decreasing) to Reduce (or increase) the compensation capacitance and the total capacitance of the second gate line. With this design, the display device of this embodiment can have a more uniform display brightness and can avoid the problem of discontinuity of the picture, and the operation method of the compensation capacitor of this embodiment can be used to improve the problem of uneven display brightness and the discontinuity of the picture .
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.
100、100a、100b‧‧‧顯示裝置101‧‧‧顯示區102a、102b、102c、102d、102e‧‧‧非顯示區110‧‧‧基板120‧‧‧畫素單元130‧‧‧第一閘極線140、G1、G2、G3、G4、G5、G6、G7、G8‧‧‧第二閘極線150‧‧‧第一資料線160‧‧‧第二資料線170‧‧‧電容補償結構172‧‧‧絕緣層174‧‧‧半導體層180‧‧‧平面輪廓182‧‧‧圓角184‧‧‧凹孔190‧‧‧驅動元件200‧‧‧高速攝影機210‧‧‧電腦220‧‧‧點亮治具310、310a‧‧‧低電位320、320a‧‧‧波型偵測元件330、330a‧‧‧高電位A‧‧‧區域G‧‧‧閘極R‧‧‧交叉重疊區S‧‧‧源極T1、T2、T3、T4、T5、T6、T7、T8、T(A)、T(B)‧‧‧電晶體100, 100a, 100b ‧‧‧
圖1A繪示為本發明一實施例的一種顯示裝置的俯視示意圖。 圖1B繪示為圖1A中區域A的放大圖。 圖1C繪示為圖1B中交叉重疊區R的放大圖。 圖1D繪示為圖1C中沿Ⅰ-Ⅰ’剖線的剖面示意圖。 圖2A繪示為本發明一實施例的一種補償電容的操作方法的示意圖。 圖2B與圖2C繪示為圖2A的補償電容的操作方法的應用。 圖3A繪示為本發明另一實施例的一種補償電容的操作方法的示意圖。 圖3B繪示為圖3A的補償電容的操作方法的應用。FIG. 1A is a schematic top view of a display device according to an embodiment of the invention. FIG. 1B is an enlarged view of the area A in FIG. 1A. FIG. 1C is an enlarged view of the crossover region R in FIG. 1B. FIG. 1D is a schematic cross-sectional view taken along line I-I' in FIG. 1C. 2A is a schematic diagram of an operation method of a compensation capacitor according to an embodiment of the invention. 2B and 2C illustrate the application of the operation method of the compensation capacitor of FIG. 2A. 3A is a schematic diagram of an operation method of a compensation capacitor according to another embodiment of the invention. FIG. 3B illustrates the application of the operation method of the compensation capacitor of FIG. 3A.
140‧‧‧第二閘極線 140‧‧‧Second gate line
160‧‧‧第二資料線 160‧‧‧Second data line
170‧‧‧電容補償結構 170‧‧‧capacity compensation structure
172‧‧‧絕緣層 172‧‧‧Insulation
174‧‧‧半導體層 174‧‧‧semiconductor layer
G‧‧‧閘極 G‧‧‧Gate
S‧‧‧源極 S‧‧‧Source
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