TW202009447A - Crystal quality determination method capable of quickly and accurately marking the region where the crystal quality cannot meet the standard, thereby reducing human misjudgments and improving the efficiency of crystal quality determination - Google Patents

Abstract

The present invention provides a crystal quality determination method, which includes the following steps of: placing a crystal to be measured between a light source and an image generator, and obtaining the image of the crystal through the image generator; performing a contrast enhancement processing on the crystal image, and defining a region to be determined; determining the size of the region to be determined in the crystal image and/or the quantity of the regions to be determined within a specific area according to a predetermined qualification determination standard; and, if the size of the region to be determined and/or the quantity of the regions to be determined within a specific area cannot meet the qualification determination standard, determining the region to be determined and/or the designated area region to be unqualified. The present invention can quickly and accurately mark the region where the crystal quality cannot meet the standard, reduce human misjudgments and improve the efficiency of crystal quality determination, thereby significantly facilitating the subsequent crystal cutting and yield.

Description

Method for judging crystal quality

The invention relates to a method for judging the quality of crystals, in particular to a judging method that can automatically define the qualified area of crystals.

Under the rapid development of industrial automation, the use of Automated Optical Inspection (AOI) to analyze acquired images has become an indispensable condition for industrial automation. It is often used in semiconductor manufacturing processes for wafer defect inspection, which can overcome fine inspection The large amount of manpower spent in the operation can also reduce the probability of misjudgment.

In the crystal manufacturing industry, the crystal growth process is usually a high-temperature manufacturing process, and all related equipment in the process will affect the purity of the crystal, including heaters, thermal insulation materials, etc., which may cause other substances to fall in due to the operation process; or In the manufacturing process, due to the conditions controlled by the process parameters, specific defects or impure substances are generated. The above impure substances or defects will cause the influence of crystal quality.

For the ingot, the use requirements are different, and the size and density of the impurity spots that really affect the quality are different. Not all the detected impurity spots need to be cut off, so when the image is judged visually by human power, For some images, when the gray scale is less clear or the density of particles of a specific size is often calculated, a misjudgment situation is likely to occur, resulting in the outflow of abnormal quality products.

Therefore, there must be a set of calculation methods that can be combined with automatic optical inspection to analyze the acquired images and reach a judgment to determine whether the ingot meets the quality specifications, or define an area that meets the quality requirements to achieve the goals of saving manpower and improving judgment efficiency .

In summary, how to accurately and quickly determine the quality of crystals is related to the production efficiency and cost of related industries, and is also an important and urgent problem to be solved.

In order to solve the above-mentioned problems, the present invention proposes a method for judging crystal quality, including the following steps: placing the crystal to be tested between a light source and an image generator, and obtaining the image of the crystal through the image generator; Contrast the enhancement process and define the area to be determined; determine the size of the area to be determined in the crystal image and/or the number of areas to be determined within a specific area according to a predetermined qualification criterion; if the size of the area to be determined and// Or, if the number of areas to be determined within a specific area does not meet the qualification criteria, the area to be determined and/or the designated area area is determined to be unqualified.

After determining that the area to be determined and/or the designated area area is unqualified, the method further includes the step of marking the unqualified or qualified area.

After determining that the area to be determined and/or the designated area area is unqualified, it further includes: further determining whether the area of the qualified area is less than a specific area value, and if the area of the qualified area is less than the specific area value, then The step of further determining the qualified area as unqualified.

After the step of further determining the qualified area as unqualified, the method further includes the step of marking the area that is further determined as unqualified or qualified.

The light source is an incandescent lamp, LED lamp, halogen lamp, mercury lamp or laser light source; the image generator is a camera or a video camera.

The quality determination method of the present invention can quickly and accurately mark the areas where the crystal quality is substandard, and can reduce the misjudgment of personnel and improve the efficiency of crystal quality determination, which can greatly help the subsequent crystal cutting and yield.

S101~S105‧‧‧Step

10‧‧‧Crystal

20‧‧‧Si ingot

I, I ₁ ~I ₅ ‧‧‧Pending area

F, F ₁ ~ F ₁₁ ‧‧‧ unqualified area

P‧‧‧Qualified area

Figure 1 is a flow chart of the crystal quality determination method.

FIG. 2 is a penetration image obtained according to step S101.

FIG. 3 is the processed image of the image of FIG. 2.

4 to 16 are schematic diagrams of areas to be determined, unqualified areas, and qualified areas in various embodiments of the present invention.

The present invention discloses a method for judging the quality of crystals. The following will describe a specific embodiment of the present invention with reference to the drawings: Please refer to FIG. 1, firstly perform step S101, and place the crystal 10 to be tested on a light source (eg incandescent lamp, LED lamp) , Halogen lamps, mercury lamps, or laser light sources, etc.) and image generators (such as cameras, cameras, or other types of image generators), when there are impurities, defects, or other impurities in the crystal, this area will be caused. When the light source irradiates the crystal, it cannot be completely penetrated by the light source, so that the signal received by the image generator will have a difference in strength, and the displayed image will have a difference between light and dark, as shown in FIG. 2.

Next, proceed to step S102, for the image information obtained in step S101, by adjusting the image brightness, contrast, or performing mathematical operations for each pixel, enhancing the edge and other image processing, to strengthen the difference in the image that needs to be determined, as shown in Figure 3 Re-adjust the threshold value for binary processing, or use artificial intelligence (AI) and other methods to distinguish the area to be determined. This area to be determined may contain impurities, defects, and shadows that produce black shadows that are not completely transparent. Or a spotted area; this embodiment distinguishes the area I to be determined in the crystal 10 through the above method, and simultaneously obtains image information of the area I to be determined, the image information includes information such as size and position, as shown in FIG. 4.

Next, step S103 is performed, and the area to be judged I is judged according to a predetermined judgment standard, and the area I to be judged that does not meet the criterion is defined as the unqualified area F according to the judgment standard, and the other areas are judged as qualified areas. The determination criteria can be set differently depending on the type of crystal to be tested and the purpose of the test. In this embodiment, the qualification judgment criteria are: the size of the area I to be judged must not be greater than 5mm, and the qualified area is greater than or equal to 15*15cm, so the area to be judged that is greater than 5mm is selected as I1, I2, I3 according to the judgment criteria, and the The crystal part containing these regions is defined as unqualified regions F1, F2, and F3, as shown in FIG. 5.

Next, proceed to step S104, and judge other crystal image areas other than the unqualified area determined according to step S103 according to the judging standard. If the area does not meet the judging standard, the area that does not meet the judging standard is redefined as the unqualified area F In one embodiment, the crystal image of FIG. 5 is further judged, and the available area is less than 15*15cm and then defined as the unqualified area, as F4, F5, F6 in FIG. 6; finally, the image of the crystal is performed in step S105 After deducting all unqualified areas F1~F6, the final qualified area P is obtained, as shown in FIG. 7, to complete the determination of the crystal quality. The invention can further mark the unqualified or qualified areas after the crystal quality determination is completed. The method of marking can be achieved by using brushes, inkjet, stamping, laser engraving, or outputting processing path files. The quality determination method of the present invention can quickly and accurately mark the areas where the crystal quality is substandard, and can reduce the misjudgment of personnel and improve the efficiency of crystal quality determination, which can greatly help the subsequent crystal cutting and yield.

In another embodiment of the present invention, step S101 is first performed, the silicon ingot 20 is placed between a light source with a wavelength range of 0.9 to 1.4 μm and the camera to obtain an image of the ingot, and then step S102 is performed for the image Perform mathematical operations and image processing such as edge enhancement to obtain image information of the region I to be determined in the ingot, as shown in FIG. 8.

Next, proceed to step S103, and determine the area I to be determined in the ingot according to a predetermined criterion set in advance. In this embodiment, the predetermined qualification criterion is: the size of the area I to be determined must not be greater than 5 mm. If the size is between 1~5mm, no more than 0 within 5cm, the usable area is greater than or equal to 15*15cm, so in step S103 can determine the area I4 of the area to be determined is greater than 5mm, and define the area as not Qualified area F8; the area to be determined is between 1 and 5 mm as I5, and this area is defined as unqualified area F7. Next, proceed to step S104 to determine the areas other than F7 and F8. The available area is less than 15*15 cm and then determine the area between F7 and F8 as the unqualified area F9, as shown in FIG. 9. Finally, in step S105, the obtained ingot image is deducted from all unqualified areas F7 to F9 to obtain a qualified area P, as shown in FIG. 10.

In another embodiment of the present invention, step S101 is first performed by placing the silicon ingot 20 between a light source with a wavelength range of 0.9 to 1.4 μm and an infrared camera to obtain an image of the silicon ingot, and then performing step S102 for the silicon crystal The stick image performs image processing such as mathematical operations and edge enhancement. As shown in FIG. 11, the image information of the region I to be determined is obtained. Next, proceed to step S103 to judge the area to be judged I. The qualification criterion of this embodiment is: the size of the area to be judged should not be greater than 5 mm, and if the size of the area I to be judged is between 1 and 5 mm, it must not exceed 5 cm 0, the usable area is greater than or equal to 15*15cm, so all the areas to be judged are judged as unqualified area F10; then proceed to step S104 to judge the remaining area other than F10, confirm that the usable area is not less than 15*15cm The eligibility criteria are shown in Figure 12. Finally, step S105 is performed to deduct all unqualified areas F10 from the captured images to obtain all qualified areas P, as shown in FIG. 13.

Another embodiment of the present invention is to perform step S101 to obtain the image of the silicon ingot 20, and then proceed to step S102 to perform mathematical operations on the silicon ingot image and enhance the edge and other image processing to find out that it does not contain impurities, defects, shadows, etc. The area is regarded as the area I to be judged, as shown in FIG. 14, and the pass judgment standard of this embodiment is set as follows: the size of the area not included in the area I to be judged is between 1 and 5 mm, no more than 2 within 5 cm, and the usable area is greater than It is equal to 15*15cm, so in the next step S103, the area I to be determined can be divided into qualified area P and unqualified area F11; then proceed to step S104 to judge other areas than F11, and confirm that the available areas are not greater than At 15*15cm. Finally, step S105 is performed to subtract all the unqualified areas F11 from the acquired image to obtain all the qualified areas P, as shown in FIG. 15.

In yet another embodiment of the present invention, the qualification judgment standard is set as follows: If the size to be judged in the area I does not contain is between 1 and 5 mm, there shall be no more than 7 within 5 cm, and the usable area is greater than or equal to 15*15 cm; first follow the steps S101 and S102 obtain the area I to be determined of the silicon ingot 20 as shown in FIG. 14. If the area I to be determined is divided into two parts in step S103, both parts meet the eligibility criteria, so there is no unqualified area; then proceed to the step S104, confirm that the usable area is no larger than 15*15cm. Finally, step S105 is performed to deduct all abnormal regions. Since there is no abnormal region to be deducted in this embodiment, it can be determined that the crystal can be divided into two qualified regions P after being cut, as shown in FIG. 16.

In other embodiments, the area to be determined may also be an area that does not contain impurities, defects, and shadows and has better light transmission without black shadows or spots, or a few areas with black shadows or spots, and the predetermined judgment standard It is whether the number and size of black shadows or spots in the area to be determined is less than or equal to a certain number or size. If the number and size of black shadows or spots is less than or equal to a certain number or size, the area is further judged Whether the usable area conforms to the preset qualified area, if it is, it is determined that the area is qualified.

In another embodiment, after the area to be determined and/or the specific area area is determined to be unqualified, the area of the determined qualified area may be further determined whether the area is less than a specific area value, if the area of the qualified area is less than the When the area value is specified, the step of further determining the qualified area as unqualified.

Through the quality judgment method disclosed above, the crystal can be classified into qualified and unqualified areas through digital calculation, which reduces the dependence of the judgment process on personnel, can have high repeatability, and digital information can provide follow-up The purpose of automatic control and data integration is to save manpower and improve quality at the same time.

The above are only the preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Any modifications or changes made to the present invention under the same spirit of the invention should still include Within the scope of the invention intended to protect.

S101~S105‧‧‧Step

Claims (7)

A method for determining crystal quality includes the following steps: placing the crystal to be measured between a light source and an image generator, obtaining the image of the crystal through the image generator; performing contrast enhancement processing on the crystal image and defining the area to be determined ; Judging the size of the area to be determined in the crystal image and/or the number of areas to be determined within a specific area according to a pre-set qualification criterion; if the size of the area to be determined and/or the area to be determined within a specific area If the quantity does not meet the qualification judgment standard, the area to be judged and/or the designated area area are judged as unqualified. The method for judging crystal quality as described in item 1 of the patent application scope, after judging the area to be judged and/or the area with a specific area as unqualified, further includes the step of marking the unqualified area. The method for judging crystal quality as described in item 1 of the patent application scope, after judging the area to be judged and/or the specific area area as unqualified, further includes: further judging whether the area of the qualified area is less than a specific area Value, if the area of the qualified area is smaller than the specific area value, the step of further determining the qualified area as a failure. The method for judging the crystal quality as described in item 4 of the patent application scope includes the step of marking the areas that are further determined to be unqualified after the step of further determining the qualified areas to be unqualified. The method for judging crystal quality as described in item 1 of the patent application, wherein the light source is an incandescent lamp, LED lamp, halogen lamp, mercury lamp or laser light source. The method for judging crystal quality according to item 1 of the patent application scope, wherein the image generator is a camera or a video camera. The method for judging crystal quality as described in item 2 or 4 of the patent application scope, wherein the marking method is one or more than two methods of pen, inkjet, stamping, laser engraving, and output of processing path files.

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