TW202004907A - Apparatus for and method of in situ clamp surface roughening - Google Patents

Apparatus for and method of in situ clamp surface roughening Download PDF

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TW202004907A
TW202004907A TW108117432A TW108117432A TW202004907A TW 202004907 A TW202004907 A TW 202004907A TW 108117432 A TW108117432 A TW 108117432A TW 108117432 A TW108117432 A TW 108117432A TW 202004907 A TW202004907 A TW 202004907A
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substrate
reticle
elements
roughened
fixture
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TW108117432A
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Chinese (zh)
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TWI825099B (en
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英瑞可 佐丹
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荷蘭商Asml控股公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10Single-purpose machines or devices
    • B24B7/16Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
    • B24D13/14Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/06Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • B24D7/066Grinding blocks; their mountings or supports
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975Assembly, maintenance, transport or storage of apparatus

Abstract

Disclosed is a dedicated roughening substrate provided with abrasive element useful for in situ roughening of a surface of a clamp in a semiconductor photolithography apparatus. Also disclosed is a method of using the roughening substrate in which the roughening substrate is loaded, positioned opposite the clamp, and then pressed against the clamp and moved laterally.

Description

用於原位夾具表面粗化之裝置及方法Device and method for roughening surface of in-situ fixture

本發明係關於可用於在用於半導體光微影的器件中固持倍縮光罩或基板之夾具,且更特定言之,係關於與倍縮光罩或基板接觸之此夾具之表面的處理。The present invention relates to a jig that can be used to hold a reticle or substrate in a device for semiconductor photolithography, and more specifically, to a surface treatment of the jig in contact with the reticle or substrate.

微影裝置為將所需圖案塗覆至基板上(通常塗覆至基板之目標部分上)之機器。微影裝置可用於例如積體電路(IC)之製造中。在彼情況下,圖案化器件(其替代地稱作光罩或倍縮光罩)可用於產生待形成於IC之個別層上之電路圖案。此圖案可轉印至基板(例如矽晶圓)上的目標部分(例如包括一個或若干晶粒的一部分)。通常經由成像至設置於基板上之輻射敏感材料(抗蝕劑)層上來進行圖案之轉印。一般而言,單一基板將含有經順次地圖案化之鄰近目標部分之網路。A lithography apparatus is a machine that applies a desired pattern onto a substrate (usually onto a target portion of the substrate). Lithography devices can be used, for example, in the manufacture of integrated circuits (ICs). In that case, a patterned device (which is alternatively referred to as a reticle or a reticle) can be used to generate circuit patterns to be formed on individual layers of the IC. This pattern can be transferred to a target part (for example, including a part of one or several dies) on a substrate (for example, a silicon wafer). The pattern is usually transferred by imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. Generally speaking, a single substrate will contain a network of adjacent target portions that are sequentially patterned.

已知的微影裝置包括:所謂的步進器,其中藉由一次性將整個圖案曝光至目標部分上來輻射每一目標部分;及所謂的掃描器,其中藉由在給定方向(「掃描」方向)上經由輻射光束而掃描圖案同時平行或反平行於此方向而同步地掃描基板來輻射每一目標部分。亦有可能藉由將圖案壓印至基板上來將圖案自圖案化器件轉印至基板。Known lithography devices include: the so-called stepper, in which each target part is irradiated by exposing the entire pattern onto the target part at once; and the so-called scanner, in which by scanning in a given direction ("scan") In the direction), the scanning pattern is simultaneously scanned in parallel or anti-parallel to the direction via the radiation beam to irradiate each target portion. It is also possible to transfer the pattern from the patterned device to the substrate by imprinting the pattern onto the substrate.

藉由使用夾具,將諸如圖案化器件或基板的物體分別附接至諸如光罩台或晶圓台的物體支撐件上。可提供靜電夾具以將物體靜電夾持至物體支撐件上。作為固持物體的部分,夾具與物體接觸。若必要,粗化與物體接觸之夾具之表面。否則,即使在移除靜電夾持力之後,由於夾具及物體之極平坦表面可經由光學接觸黏附,因此物體亦有繼續黏著至夾具上的趨勢。此「黏性」可使自夾具中移除物體所需的時間變得複雜及延長,或甚至導致無法無損移除。By using jigs, objects such as patterned devices or substrates are attached to object supports such as reticle stages or wafer stages, respectively. An electrostatic fixture can be provided to electrostatically clamp the object to the object support. As the part holding the object, the jig is in contact with the object. If necessary, roughen the surface of the fixture that is in contact with the object. Otherwise, even after removing the electrostatic clamping force, since the extremely flat surface of the jig and the object can be adhered via optical contact, the object tends to continue to adhere to the jig. This "stickiness" can complicate and lengthen the time required to remove objects from the fixture, or even result in non-destructive removal.

在夾具的使用壽命期間,必須定期地或例如在其開始呈現黏性時粗化夾具表面。夾具粗化通常在掃描儀/步進器離線且夾具自其操作環境中移除的情況下進行。此可產生大量停止時間。During the service life of the jig, the surface of the jig must be roughened periodically or for example when it starts to exhibit viscosity. Grinding of the fixture is usually performed with the scanner/stepper offline and the fixture removed from its operating environment. This can generate a large amount of stop time.

因此,需要一種用於減少機器停止時間的夾具粗化的系統。Therefore, there is a need for a system for grip coarsening to reduce machine downtime.

下文呈現一或多個實施例之簡化概述以便提供對實施例之基本理解。此發明內容並非所有所涵蓋實施例之廣泛綜述,且既不意欲識別所有實施例之關鍵或重要要素,亦不意欲對任何或所有實施例之範疇設定限制。其唯一目的在於以簡化形式呈現一或多個實施例的一些概念以作為稍後呈現之更詳細描述的序言。The following presents a simplified summary of one or more embodiments in order to provide a basic understanding of the embodiments. This summary of the invention is not an extensive overview of all the covered embodiments, and neither intends to identify key or important elements of all embodiments, nor intend to set limits on the scope of any or all embodiments. Its sole purpose is to present some concepts of one or more embodiments in a simplified form as a prelude to the more detailed description that is presented later.

根據實施例的一個態樣,揭示可藉由提供粗化基板來原位進行夾具粗化的器件及方法,該粗化基板可以與倍縮光罩或基板相同的方式裝載,且隨後移動至需要粗化的夾具之表面並壓靠在夾具之表面上。粗化基板包括研磨元件,該等研磨元件藉由撓曲件連接至基板基底,使得研磨元件可與夾具的表面一致且向夾具表面施加大體上均勻的法向力。隨後,研磨元件橫向來回移動,以粗化夾具表面。According to one aspect of the embodiment, a device and a method for in-situ roughening of a jig by providing a roughened substrate are disclosed, the roughened substrate can be loaded in the same manner as a reticle or a substrate, and then moved to a desired position Roughen the surface of the jig and press against the surface of the jig. The roughened substrate includes abrasive elements that are connected to the substrate base by flexures so that the abrasive elements can conform to the surface of the fixture and apply a substantially uniform normal force to the fixture surface. Subsequently, the grinding element moves back and forth laterally to roughen the surface of the fixture.

根據實施例的另一態樣,每一研磨元件具有各別致動器,諸如壓電元件,其經控制以橫向移動研磨元件。According to another aspect of the embodiment, each abrasive element has a separate actuator, such as a piezoelectric element, which is controlled to move the abrasive element laterally.

根據實施例的另一態樣,揭示一種包含基板基底及複數個研磨元件的裝置,研磨元件中之每一者藉由各別耦接元件機械耦接至基板基底。基板基底可包含倍縮光罩基底。各別研磨元件中之每一者可包含壓電元件,該壓電元件經配置以在控制單元的控制下橫向移動各別研磨元件。各別耦接元件中之每一者可包括各別撓曲件,該各別撓曲件可經預裝載,且該各別撓曲件可具有大體上垂直於基板基底的方向上的低彈簧常數。大體上垂直於基板基底的方向上的彈簧常數介於約50 N/m至約5000 N/m的範圍內。According to another aspect of the embodiment, a device including a substrate base and a plurality of polishing elements is disclosed, each of the polishing elements being mechanically coupled to the substrate base by a separate coupling element. The substrate base may include a reticle base. Each of the individual grinding elements may include a piezoelectric element configured to move the individual grinding elements laterally under the control of the control unit. Each of the separate coupling elements may include a separate flexure, the separate flexure may be preloaded, and the separate flexure may have a low spring in a direction substantially perpendicular to the substrate base constant. The spring constant in a direction substantially perpendicular to the substrate base is in the range of about 50 N/m to about 5000 N/m.

複數個研磨元件中之每一者可具有大體上相同的形狀及尺寸。複數個研磨元件可配置成陣列,該陣列可為有序陣列。陣列可大體上覆蓋基板基底。Each of the plurality of abrasive elements may have substantially the same shape and size. The plurality of grinding elements can be configured as an array, and the array can be an ordered array. The array may substantially cover the substrate base.

研磨元件中之每一者可包含陶瓷材料。對於研磨元件中之每一者,研磨元件與基板基底之間的距離可藉由止擋件限制。Each of the abrasive elements may include ceramic materials. For each of the polishing elements, the distance between the polishing element and the substrate base can be limited by the stopper.

根據實施例的另一態樣,揭示一種粗化半導體光微影裝置中之夾具之表面的方法,該方法包含以下步驟:將粗化基板裝載至平台上,該粗化基板具有具備複數個研磨元件的面;使粗化基板與夾具對準,使得具有瘤節的夾具之表面與具有研磨元件的粗化基板之表面相對;使研磨元件壓靠夾具之表面;藉由在大體上平行於夾具之表面的平面內大體上平移研磨元件直至獲得所需粗糙度來粗化瘤節;將粗化基板移動遠離夾具;將粗化基板移動至粗化倍縮光罩可自平台卸載的位置,以及自平台卸載粗化基板。在大體上平行於夾具之表面的平面內平移粗化基板直至獲得所需粗糙度的步驟包含確定瘤節具有所需粗糙度的時間。確定獲得所需粗糙度的時間包含確定已知導致所需粗糙度的時間量已過的時間。確定已獲得所需粗糙度的時間包含感測瘤節的粗糙度。藉由在大體上平行於夾具之表面的平面內大體上平移研磨元件直至獲得所需粗糙度來粗化瘤節可包含移動基板。複數個研磨元件可機械耦接至各別致動器,並且藉由在大體上平行於夾具之表面的平面內大體上平移研磨元件直至獲得所需粗糙度來粗化瘤節可包含使致動器在大體上平行於夾具之表面的平面內大體上移動其各別研磨元件。致動器可包含壓電元件。According to another aspect of the embodiment, a method for roughening a surface of a jig in a semiconductor photolithography device is disclosed. The method includes the steps of: loading a roughened substrate on a platform, the roughened substrate having a plurality of grinding The face of the element; align the roughened substrate with the jig so that the surface of the jig with the nodule is opposite to the surface of the roughened substrate with the abrasive element; press the abrasive element against the surface of the jig; by being substantially parallel to the jig The grinding element is generally translated in the plane of the surface until the desired roughness is obtained to roughen the nodules; the roughened substrate is moved away from the fixture; the roughened substrate is moved to a position where the roughened reticle can be unloaded from the platform, and Unload the roughened substrate from the platform. The step of translating the roughened substrate in a plane substantially parallel to the surface of the fixture until the desired roughness is obtained includes determining the time at which the nodule has the desired roughness. Determining the time to obtain the desired roughness includes determining the time that the amount of time known to cause the desired roughness has passed. Determining the time to obtain the desired roughness includes sensing the roughness of the nodules. Roughening the nodules by generally translating the abrasive element in a plane substantially parallel to the surface of the fixture until the desired roughness is achieved may include moving the substrate. A plurality of abrasive elements may be mechanically coupled to the respective actuators, and roughening the nodules by generally translating the abrasive elements in a plane substantially parallel to the surface of the fixture until the desired roughness is obtained may include enabling the actuator Move their respective abrasive elements substantially in a plane that is substantially parallel to the surface of the fixture. The actuator may contain a piezoelectric element.

下文參考附圖詳細描述本發明主題的其他實施例、特徵及優勢,以及各種實施例之結構及操作。The following describes other embodiments, features, and advantages of the present subject matter, as well as the structure and operation of various embodiments, with reference to the accompanying drawings.

現參看圖式描述各種實施例,其中相似參考數字始終用以指代相似元件。在以下描述中,出於解釋之目的,闡述眾多特定細節以便增進對一或多個實施例之透徹理解。然而,在一些或所有情況下可明顯的是,可在不採用下文所描述之特定設計細節的情況下實踐下文所描述之任何實施例。在以下描述中及在申請專利範圍中,可使用術語「上」、「下」、「頂部」、「底部」、「豎直」、「水平」及類似術語。除非另有說明,否則此等術語意欲僅表示相對於重力的相對定向,而非任何定向。Various embodiments are now described with reference to the drawings, wherein like reference numerals are always used to refer to like elements. In the following description, for the purposes of explanation, numerous specific details are set forth in order to improve a thorough understanding of one or more embodiments. However, it may be apparent in some or all cases that any of the embodiments described below can be practiced without employing the specific design details described below. In the following description and in the scope of patent application, the terms "upper", "lower", "top", "bottom", "vertical", "horizontal" and similar terms may be used. Unless otherwise stated, these terms are intended to mean only a relative orientation with respect to gravity, not any orientation.

圖1示意性地描繪根據本發明之實施例之微影裝置100。裝置包括:照明系統(照明器) IL,其經組態以調節輻射光束B (例如UV輻射或EUV輻射);支撐結構或支撐件或圖案支撐件(例如光罩台) MT,其經構建以支撐圖案化器件(例如光罩) MA且連接至第一定位器PM,該第一定位器PM經組態以根據某些參數來精確定位圖案化器件;基板台(例如晶圓台) WT,其經建構以固持基板(例如抗蝕劑塗佈晶圓) W且連接至第二定位器PW,該第二定位器PW經組態以根據某些參數來精確定位基板;及投影系統(例如折射投影透鏡系統) PS,其經組態以藉由圖案化器件MA將賦予輻射光束B的圖案投影至基板W的目標部分C (例如包括一或多個晶粒)上。FIG. 1 schematically depicts a lithography apparatus 100 according to an embodiment of the present invention. The device includes: an illumination system (illuminator) IL configured to adjust the radiation beam B (eg UV radiation or EUV radiation); a support structure or support or pattern support (eg photomask table) MT, which is constructed to Supporting a patterned device (e.g. reticle) MA and connected to a first positioner PM configured to accurately position the patterned device according to certain parameters; substrate table (e.g. wafer table) WT, It is constructed to hold a substrate (such as a resist-coated wafer) W and is connected to a second positioner PW that is configured to accurately position the substrate according to certain parameters; and a projection system (such as Refractive projection lens system) PS, which is configured to project the pattern imparted to the radiation beam B onto the target portion C (eg, including one or more dies) of the substrate W by the patterning device MA.

照明系統可包括用於導引、塑形或控制輻射的各種類型之光學組件,諸如折射、反射、磁性、電磁、靜電或其他類型之光學組件,或其任何組合。The lighting system may include various types of optical components for guiding, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof.

支撐結構以取決於圖案化器件之定向、微影裝置之設計及其他條件(諸如,圖案化器件是否經固持於真空環境中)之方式來固持圖案化器件。支撐結構可使用機械、真空、靜電或其他夾持技術來固持圖案化器件。支撐結構可為例如框架或台,其可視需要而固定或可移動。光罩支撐結構可確保圖案化器件例如相對於投影系統處於所需位置。可認為本文中對術語「倍縮光罩」或「光罩」之任何使用與更一般術語「圖案化器件」同義。The support structure holds the patterned device in a manner that depends on the orientation of the patterned device, the design of the lithography apparatus, and other conditions (such as whether the patterned device is held in a vacuum environment). The support structure may use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterned device. The support structure may be, for example, a frame or a table, which may be fixed or movable as needed. The reticle support structure can ensure that the patterned device is in a desired position relative to the projection system, for example. It may be considered that any use of the term "reduced reticle" or "reticle" herein is synonymous with the more general term "patterned device".

本文中所使用之術語「圖案化器件」應經廣泛地解釋為係指可用以在輻射光束之橫截面中向輻射光束賦予圖案以便在基板之目標部分中創建圖案的任何器件。應注意,舉例而言,若賦予至輻射光束之圖案包括相移特徵或所謂輔助特徵,則該圖案可不確切地對應於基板之目標部分中之所需圖案。通常,賦予至輻射光束之圖案將對應於目標部分中所創建之器件(諸如積體電路)中的特定功能層。The term "patterned device" as used herein should be broadly interpreted as referring to any device that can be used to impart a pattern to the radiation beam in the cross-section of the radiation beam in order to create a pattern in the target portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes phase-shifting features or so-called auxiliary features, the pattern may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the radiation beam will correspond to a specific functional layer in the device created in the target portion, such as an integrated circuit.

圖案化器件可為透射的或反射的。圖案化器件之實例包括光罩、可程式化鏡面陣列,及可程式化LCD面板。光罩在微影中為吾人所熟知,且包括諸如二元、交變相移及衰減式相移之光罩類型,以及各種混合光罩類型。可程式化鏡面陣列之一實例使用小鏡面之矩陣配置,該等小鏡面中之每一者可個別地傾斜,以便使入射輻射光束在不同方向上反射。傾斜鏡將圖案賦予至藉由鏡面矩陣反射之輻射光束中。The patterned device may be transmissive or reflective. Examples of patterned devices include photomasks, programmable mirror arrays, and programmable LCD panels. Masks are well known to us in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. One example of a programmable mirror array uses a matrix configuration of small mirrors, each of which can be individually tilted to reflect the incident radiation beam in different directions. The inclined mirror imparts the pattern to the radiation beam reflected by the mirror matrix.

本文中所使用之術語「投影系統」應廣泛地解釋為涵蓋適於所使用之曝光輻射或適於諸如浸潤液體之使用或真空之使用之其他因素的任何類型之投影系統,包括折射、反射、反射折射、磁性、電磁及靜電光學系統,或其任何組合。可認為本文中對術語「投影透鏡」之任何使用與更一般之術語「投影系統」同義。The term "projection system" as used herein should be interpreted broadly to cover any type of projection system suitable for the exposure radiation used or for other factors such as the use of infiltrating liquids or the use of vacuum, including refraction, reflection, Catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof. It can be considered that any use of the term "projection lens" herein is synonymous with the more general term "projection system".

支撐結構及基板台在下文中亦可稱為物件支撐件。物件包括但不限於圖案化器件(諸如倍縮光罩)以及基板(諸如晶圓)。The supporting structure and the substrate table may also be referred to as object supports in the following. Objects include, but are not limited to, patterned devices (such as shrink masks) and substrates (such as wafers).

如本文中所描繪,裝置屬於反射類型(例如使用反射光罩)。或者,裝置可屬於透射類型(例如使用透射光罩)。As depicted herein, the device is of the reflective type (eg, using a reflective mask). Alternatively, the device may be of the transmissive type (for example using a transmissive mask).

微影裝置可屬於具有兩個(雙平台)或更多個基板台(及/或兩個或更多個光罩台)之類型。在此等「多平台」機器中,可並行地使用額外台,或可對一或多個台進行預備步驟,同時將一或多個其他台用於曝光。The lithography apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In these "multi-platform" machines, additional stations can be used in parallel, or one or more stations can be subjected to preliminary steps while one or more other stations are used for exposure.

微影裝置亦可屬於如下類型:其中基板之至少一部分可由具有相對高折射率之液體(例如水)覆蓋,以便填充投影系統與基板之間的空間。亦可將浸潤液體施加至微影裝置中之其他空間,例如,光罩與投影系統之間的空間。浸潤技術在此項技術中熟知用於增大投影系統之數值孔徑。本文中所使用之術語「浸潤」並不意謂諸如基板之結構必須浸沒於液體中,而是僅意謂液體在曝光期間位於投影系統與基板之間。Lithography devices can also be of the type in which at least a portion of the substrate can be covered by a liquid (eg water) with a relatively high refractive index in order to fill the space between the projection system and the substrate. The infiltrating liquid can also be applied to other spaces in the lithography device, for example, the space between the reticle and the projection system. Infiltration techniques are well known in the art for increasing the numerical aperture of projection systems. The term "wetting" as used herein does not mean that a structure such as a substrate must be submerged in liquid, but only means that the liquid is located between the projection system and the substrate during exposure.

參看圖1,照明器IL自輻射源SO接收輻射光束。舉例而言,當源為準分子雷射時,源與微影裝置可為分離實體。在此等狀況下,不認為源形成微影裝置之部分,且輻射光束係憑藉包括例如合適導引鏡面及/或擴束器之光束遞送系統而自源SO傳遞至照明器IL。在其他狀況下,例如,當源為水銀燈時,源可為微影裝置之整體零件。源SO及照明器IL連同光束遞送系統(必要時)可經稱作輻射系統。Referring to Fig. 1, the illuminator IL receives a radiation beam from a radiation source SO. For example, when the source is an excimer laser, the source and the lithography device may be separate entities. Under these conditions, the source is not considered to form part of the lithography device, and the radiation beam is delivered from the source SO to the illuminator IL by means of a beam delivery system including, for example, a suitable guiding mirror and/or beam expander. In other situations, for example, when the source is a mercury lamp, the source may be an integral part of the lithography device. The source SO and the illuminator IL together with the beam delivery system (if necessary) may be referred to as a radiation system.

照明器IL可包括用於調整輻射光束之角強度分佈之調整器。一般而言,可調整照明器之光瞳平面中之強度分佈的至少外部及/或內部徑向範圍(通常分別稱作σ外部及σ內部)。此外,照明系統IL可包括各種其他組件,諸如積光器及聚光器。照明器可用於調節輻射光束,以在其橫截面中具有所需均一性及強度分佈。The illuminator IL may include an adjuster for adjusting the angular intensity distribution of the radiation beam. In general, at least the outer and/or inner radial extent of the intensity distribution in the pupil plane of the illuminator can be adjusted (commonly referred to as σouter and σinner, respectively). In addition, the lighting system IL may include various other components, such as a light collector and a light collector. The illuminator can be used to adjust the radiation beam to have the desired uniformity and intensity distribution in its cross-section.

輻射光束B入射至固持在支撐結構(例如光罩台) MT上的圖案化器件(例如光罩) MA上,且藉由圖案化器件來經圖案化。在經圖案化器件(例如光罩) MA反射之後,輻射光束B穿過投影系統PS,該投影系統PS將光束聚焦至基板W的目標部分C上。憑藉第二定位器PW及位置感測器IF2 (例如干涉器件、線性編碼器或電容式感測器),基板台WT可精確移動,例如以便在輻射光束B的路徑中定位不同目標部分C。類似地,第一定位器PM及另一位置感測器IF1可用於例如在自光罩庫中機械檢索之後或在掃描期間相對於輻射光束B之路徑精確定位圖案化器件(例如光罩) MA。一般而言,可憑藉形成第一定位器PM之部分的長衝程模組(粗略定位)及短衝程模組(精細定位)來實現支撐結構(例如光罩台) MT之移動。類似地,可使用形成第二定位器PW之部分的長衝程模組及短衝程模組來實現基板台WT之移動。在步進器(與掃描儀相對)的情況下,支撐結構(例如光罩台) MT可僅連接至短衝程致動器,或可為固定的。可使用光罩對準標記M1、M2及基板對準標記P1、P2來對準圖案化器件(例如光罩) MA及基板W。儘管如所說明之基板對準標記佔據專用目標部分,但該等基板對準標記(此等稱為劃道對準標記)可定位於目標部分之間的空間中。類似地,在圖案化器件(例如光罩) MA上設置多於一個晶粒的情況下,光罩對準標記可定位於晶粒之間。The radiation beam B is incident on the patterned device (eg, photomask) MA held on the support structure (eg, photomask stage) MT, and is patterned by the patterned device. After being reflected by the patterned device (eg, photomask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto the target portion C of the substrate W. By virtue of the second positioner PW and the position sensor IF2 (such as an interference device, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved, for example, to locate different target parts C in the path of the radiation beam B. Similarly, the first positioner PM and the other position sensor IF1 can be used to accurately position the patterned device (e.g. reticle) MA relative to the path of the radiation beam B, for example after mechanical retrieval from the reticle library or during scanning . Generally speaking, the movement of the supporting structure (such as the reticle stage) MT can be realized by means of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning) that form part of the first positioner PM. Similarly, a long-stroke module and a short-stroke module that form part of the second positioner PW can be used to achieve the movement of the substrate table WT. In the case of a stepper (opposite the scanner), the support structure (eg, reticle stage) MT may only be connected to the short-stroke actuator, or may be fixed. The mask alignment marks M1, M2 and the substrate alignment marks P1, P2 may be used to align the patterned device (eg, mask) MA and the substrate W. Although the substrate alignment marks as illustrated occupy dedicated target portions, the substrate alignment marks (referred to as scribe lane alignment marks) may be positioned in the space between the target portions. Similarly, in the case where more than one die is provided on the patterned device (eg, mask) MA, the mask alignment mark may be positioned between the die.

圖2描繪靜電夾具110之部分橫截面,靜電夾具110可應用於諸如倍縮光罩或晶圓的物件的邊緣。圖2亦藉由圖中的箭頭示意性地說明可由夾具產生的夾具壓力。夾具110包含由絕緣材料形成的夾具下部部分120及由介電材料形成的夾具上部部分130。夾具上部部分130形成有複數個瘤節140。瘤節140之頂部確定平面150,物件(未示出)固持在該平面150中。第一電極160設置於夾具下部部分120與夾具上部部分130之間,且第一電極160適用於在電壓(通常為3 kV)下固持以產生靜電夾持力。接地電極170固持在地,且藉由空隙180與第一電極160間隔開,空隙180充當第一電極與接地電極之間的障壁。空隙108可填充有絕緣材料、介電材料,或保持為空的。FIG. 2 depicts a partial cross-section of an electrostatic fixture 110 that can be applied to the edge of an object such as a reticle or wafer. Figure 2 also schematically illustrates the clamp pressure that can be generated by the clamp by the arrows in the figure. The jig 110 includes a jig lower portion 120 formed of an insulating material and a jig upper portion 130 formed of a dielectric material. The upper portion 130 of the jig is formed with a plurality of knobs 140. The top of the nodule 140 defines a plane 150 in which an object (not shown) is held. The first electrode 160 is disposed between the jig lower portion 120 and the jig upper portion 130, and the first electrode 160 is adapted to be held under a voltage (typically 3 kV) to generate an electrostatic clamping force. The ground electrode 170 is held on the ground and is separated from the first electrode 160 by a gap 180, and the gap 180 serves as a barrier between the first electrode and the ground electrode. The void 108 may be filled with insulating material, dielectric material, or remain empty.

圖2中的向下箭頭示意性地說明圖2的夾具可產生的夾持壓力。箭頭之長度表示夾持力,並且可看出,可在第一電極之寬度上產生均勻的夾持壓力,該壓力之大小取決於多個參數,包括施加的電壓、夾具上部部分130之介電常數以及夾具110之各個部分的尺寸。當向電極160施加電壓時,物件可藉由靜電夾持力固持在平面150中。舉例而言,2016年9月27日發佈的美國專利第9,455,172號中揭示關於此種性質的靜電夾具的額外細節,該美國專利之全部內容以引用之方式併入本文中。The downward arrow in FIG. 2 schematically illustrates the clamping pressure that the clamp of FIG. 2 can generate. The length of the arrow indicates the clamping force, and it can be seen that a uniform clamping pressure can be generated across the width of the first electrode, the magnitude of the pressure depends on a number of parameters, including the applied voltage, the dielectric of the upper portion 130 of the fixture The constant and the size of each part of the jig 110. When a voltage is applied to the electrode 160, the object can be held in the plane 150 by the electrostatic clamping force. For example, U.S. Patent No. 9,455,172 issued on September 27, 2016 discloses additional details regarding electrostatic clamps of this nature, the entire contents of which are incorporated herein by reference.

如上所述,在操作中,瘤節140之頂部與待固持物件之大致平坦表面接觸。此可導致此等表面的光學接觸結合,此可妨礙物件自夾具中的有效移除。為解決此問題,可有意地粗化瘤節的頂部以防止充分的光學接觸。一般而言,表面粗糙度Ra (自中線之輪廓高度偏差之絕對值的算術平均值)較佳在約3 nm至約7 nm的範圍內。As described above, in operation, the top of the knob 140 is in contact with the substantially flat surface of the object to be held. This can lead to optical contact bonding of these surfaces, which can prevent effective removal of objects from the fixture. To solve this problem, the top of the nodule can be intentionally roughened to prevent sufficient optical contact. In general, the surface roughness Ra (arithmetic mean value of the absolute value of the contour height deviation from the center line) is preferably in the range of about 3 nm to about 7 nm.

在使用過程中,瘤節頂部表面可因磨損而變得過於光滑,使得進行光學接觸結合再次為可能的。當此情況發生時,有必要重新粗化瘤節的頂部。實現此的一種方法係自工具上移除夾具且手動粗化夾具。然而,此導致嚴重的停止時間損失。替代地,具有用於原位重新調節瘤節頂部且利用更短停止時間的系統為有利的。During use, the top surface of the nodule can become too smooth due to wear, making optical contact bonding possible again. When this happens, it is necessary to re-roughen the top of the nodules. One way to achieve this is to remove the fixture from the tool and manually roughen the fixture. However, this results in severe loss of stop time. Alternatively, it is advantageous to have a system for repositioning the top of the nodule in situ and utilizing a shorter stop time.

以下論述使用倍縮光罩作為實例,但應當理解,所揭示的原理可應用於其他夾持的物件,例如基板。圖3示出根據實施例之一個態樣的粗化倍縮光罩200的實例。粗化倍縮光罩200包括以下文描述的方式安裝在倍縮光罩基底220上的研磨元件210的陣列。粗化倍縮光罩200可正如任何其他倍縮光罩一樣裝載至工具中,但在其面向夾具定位之後,倍縮光罩200壓靠在夾具上並導致橫向移動。此使得經配置以大體上覆蓋粗化倍縮光罩200之表面的研磨元件210與夾具上的瘤節接觸,且隨後粗化瘤節的頂部。作為一實例,圖2的配置中之研磨元件210 (例如,陶瓷「石」)以有序陣列配置,但其他配置亦為可能的,包括非有序陣列及含有不同尺寸及形狀之研磨元件之陣列。此外,圖2中之陣列為4×4陣列,但對於一般熟習此項技術者而言將顯而易見的是,可使用其他尺寸的陣列。選擇陣列及研磨元件210的總尺寸,使得粗化倍縮光罩足夠接近與標準倍縮光罩相同的尺寸,經設計以用於與標準倍縮光罩一起工作的器件亦將對粗化倍縮光罩起作用。The following discussion uses a reticle as an example, but it should be understood that the disclosed principles can be applied to other clamped objects, such as substrates. FIG. 3 shows an example of a roughened reticle 200 according to one aspect of the embodiment. The roughened reticle 200 includes an array of abrasive elements 210 mounted on the reticle substrate 220 in the manner described below. The roughened reticle 200 can be loaded into the tool just like any other reticle, but after it is positioned facing the fixture, the reticle 200 is pressed against the fixture and causes lateral movement. This causes the abrasive element 210 configured to substantially cover the surface of the roughened reticle 200 to contact the nodules on the jig and then roughen the top of the nodules. As an example, the polishing elements 210 (eg, ceramic "stone") in the configuration of FIG. 2 are arranged in an ordered array, but other configurations are also possible, including unordered arrays and abrasive elements containing different sizes and shapes Array. In addition, the array in FIG. 2 is a 4×4 array, but it will be apparent to those skilled in the art that other sizes of arrays can be used. Select the total size of the array and grinding element 210 so that the roughened reticle is close enough to the same size as the standard reticle, and devices designed to work with the standard reticle will also be used for roughening Shrink hood works.

研磨元件210可包含用於粗化表面的任何材料,例如陶瓷材料。可使用之材料之其他實例包括氧化鋁及氧化鋯。The grinding element 210 may contain any material for roughening the surface, such as a ceramic material. Other examples of materials that can be used include alumina and zirconia.

與粗化過程相關的參數包括在於夾具表面上滑動時施加於研磨元件210上之力的大小、研磨元件210與瘤節140之間在研磨元件區域上的壓力的均一性以及石頭的粗糙度。原位粗化的主要挑戰中之一者為確保所有倍縮光罩夾具瘤節上的壓力均勻且一致。此設計目標藉由下文描述的系統來實現。至於石頭的粗糙度,同樣的材料可有多種不同的粗糙度。一般而言,用於本文揭示的系統之石頭粗糙度的範圍為約200 nm至約1000 nm。Parameters related to the roughening process include the magnitude of the force applied to the grinding element 210 when sliding on the surface of the fixture, the uniformity of the pressure on the grinding element area between the grinding element 210 and the knob 140, and the roughness of the stone. One of the main challenges of in-situ roughening is to ensure that the pressure on the nodules of all reticle fixtures is uniform and consistent. This design goal is achieved by the system described below. As for the roughness of the stone, the same material can have many different roughnesses. In general, the roughness of stones used in the system disclosed herein ranges from about 200 nm to about 1000 nm.

圖4A示出根據實施例之一個態樣的粗化倍縮光罩200的實例。粗化倍縮光罩4A包括多個研磨元件210,其一起大體上覆蓋倍縮光罩基底220之整個表面。FIG. 4A shows an example of a roughened reticle 200 according to one aspect of the embodiment. The roughened reticle 4A includes a plurality of abrasive elements 210, which together cover substantially the entire surface of the reticle base 220.

如上所述,與粗化過程相關的兩個參數為在於夾具表面上滑動時施加於研磨元件上之力的大小及研磨元件210與瘤節140之間在研磨元件區域上的壓力的均一性。若壓力在所有倍縮光罩夾具瘤節上均勻且一致,則為最有利的。為控制此等參數且如圖4A所示,研磨元件中之每一者具備至少一個撓曲件230。舉例而言,撓曲件230可為彈簧。撓曲件230經預裝載以確保均勻的最小法向力,同時符合夾具110的形狀及平坦度,如圖4B所示。止擋件240在預裝載撓曲件230的情況下限制研磨元件210的豎直移動。As mentioned above, the two parameters related to the roughening process are the magnitude of the force applied to the abrasive element when sliding on the surface of the fixture and the uniformity of the pressure between the abrasive element 210 and the knob 140 on the abrasive element area. It is the most advantageous if the pressure is uniform and consistent on all nodules of the reticle fixture. To control these parameters and as shown in FIG. 4A, each of the abrasive elements is provided with at least one flexure 230. For example, the flexure 230 may be a spring. The flexure 230 is preloaded to ensure a uniform minimum normal force while conforming to the shape and flatness of the clamp 110, as shown in FIG. 4B. The stopper 240 restricts the vertical movement of the grinding element 210 with the flexure 230 preloaded.

因此,每一研磨元件210藉由撓曲件230附接至倍縮光罩基底220。撓曲件230在z方向上預裝載,且經設計成具有z方向上的低彈簧常數(亦即,「較軟」)。撓曲件230具有大體上垂直於倍縮光罩基底220之方向上的介於約50 N/m至約5000 N/m範圍內的彈簧常數。此確保夾具與研磨元件之間的法向力的所需一致性,該法向力將與預裝載力大致相同。Therefore, each grinding element 210 is attached to the reticle base 220 by the flexure 230. The flexure 230 is preloaded in the z direction and is designed to have a low spring constant in the z direction (ie, "softer"). The flexure 230 has a spring constant in the range of about 50 N/m to about 5000 N/m in a direction substantially perpendicular to the reticle base 220. This ensures the required consistency of the normal force between the fixture and the grinding element, which will be approximately the same as the preload force.

柔性預裝載撓曲件確保符合夾具表面。研磨元件陣列中之每一研磨元件利用撓曲件機械耦接至倍縮光罩基底,該撓曲件(例如彈簧)具有在z方向(與對應於xy平面之陣列正交)上預裝載的低彈簧常數且具有在z、Rx (繞x軸旋轉)及Ry (繞y軸旋轉)中之低彈簧常數(較軟),以及所有其他自由度之較高的彈簧常數(較硬)。止擋件240限制研磨元件在z方向上的移動,使得研磨元件210最多停留在距倍縮光罩基底預定距離處。由於施加的力足以解決所有研磨元件210的預裝載,因此低彈簧力彈簧允許在z方向上在位移範圍內的大體上恆定的彈簧力。Flexible pre-loaded flexures ensure compliance with the fixture surface. Each polishing element in the array of polishing elements is mechanically coupled to the reticle base with a flexure, the flexure (such as a spring) has a pre-loaded in the z direction (orthogonal to the array corresponding to the xy plane) Low spring constant and has a low spring constant (softer) in z, Rx (rotation around the x axis) and Ry (rotation around the y axis), and a higher spring constant (harder) in all other degrees of freedom. The stopper 240 restricts the movement of the grinding element in the z direction, so that the grinding element 210 stays at a predetermined distance from the base of the reticle at most. Since the applied force is sufficient to solve the preloading of all grinding elements 210, the low spring force spring allows a substantially constant spring force in the displacement range in the z direction.

因此,如圖4B中所示,粗化倍縮光罩200在z方向上移動,使得當研磨元件210壓靠夾具110上的瘤節140時,由研磨元件210的位移產生的力克服由撓曲件230施加的向上彈簧力。在此種情況下,由撓曲件230施加的力大體上恆定,因此在瘤節140上施加大體上恆定的法向力。每一研磨元件210接觸一定數目n的瘤節140。每一研磨元件210獨立地符合夾具表面。Therefore, as shown in FIG. 4B, the roughened reticle 200 moves in the z direction so that when the grinding element 210 is pressed against the knob 140 on the jig 110, the force generated by the displacement of the grinding element 210 overcomes the The upward spring force exerted by the curved member 230. In this case, the force exerted by the flexure 230 is substantially constant, so a substantially constant normal force is exerted on the knob 140. Each abrasive element 210 contacts a certain number n of nodules 140. Each abrasive element 210 independently conforms to the fixture surface.

圖5為使用粗化倍縮光罩200之夾具粗化製程的實例的流程圖。在步驟S500中,粗化倍縮光罩200經裝載至倍縮光罩平台上,如同常規倍縮光罩一樣。在步驟S510中,粗化倍縮光罩200隨後與夾具110對準,使得夾具110的帶有瘤節140的表面與粗化倍縮光罩200的帶有研磨元件210的表面相對。在步驟S520中,控制倍縮光罩平台以使粗化倍縮光罩200壓靠夾具110,使得研磨元件210將與瘤節140接觸,以獲得所需接觸力及位移。撓曲件230將變形以維持預裝載周圍的單獨力。在步驟S530中,隨後命令倍縮光罩平台在xy平面中平移粗化倍縮光罩200以執行拋光,直至獲得所需粗糙度為止。所需粗糙度將具有介於約3 nm至約7 nm範圍內的Ra。隨後在步驟S540中,自夾具拉離粗化倍縮光罩200。隨後在步驟S550中,粗化倍縮光罩200遠離夾具移動至粗化倍縮光罩200可卸載的位置。隨後在步驟S560中,粗化倍縮光罩200自倍縮光罩平台卸載。FIG. 5 is a flowchart of an example of a roughening process of a jig using a roughening reticle 200. In step S500, the roughened reticle 200 is loaded onto the reticle platform, just like a conventional reticle. In step S510, the roughened reticle 200 is then aligned with the jig 110 so that the surface of the jig 110 with the knob 140 is opposite to the surface of the roughened reticle 200 with the abrasive element 210. In step S520, the reticle stage is controlled so that the roughened reticle 200 is pressed against the jig 110 so that the grinding element 210 will be in contact with the knob 140 to obtain the required contact force and displacement. The flexure 230 will deform to maintain a separate force around the preload. In step S530, the reticle stage is then commanded to translate the roughening reticle 200 in the xy plane to perform polishing until the desired roughness is obtained. The required roughness will have a Ra in the range of about 3 nm to about 7 nm. Subsequently, in step S540, the roughening reticle 200 is pulled away from the jig. Subsequently, in step S550, the roughening reticle 200 moves away from the jig to a position where the roughening reticle 200 can be unloaded. Then in step S560, the roughened reticle 200 is unloaded from the reticle platform.

當相對運動經執行一先驗已知的時間量以產生所需表面粗糙度時,步驟S530可終止。替代地,執行步驟S530的一部分可包括例如光學地使用感測器資料來產生肯定判定,即已在執行相對xy運動直至此判定為肯定的為止的情況下獲得所需表面粗糙度,When the relative motion is performed for an a priori known amount of time to produce the desired surface roughness, step S530 may be terminated. Alternatively, part of performing step S530 may include, for example, optically using sensor data to generate a positive determination that the desired surface roughness has been obtained in the case where relative xy motion has been performed until this determination is positive,

在圖6中所示的替代實施例中,每一個別研磨元件210由個別致動器250 (例如用壓電元件)個別地致動。致動器250在控制單元260的控制下橫向移動(即在xy平面內)其各別研磨元件210。此力可以協調的方式施加,使得隨著研磨元件210在xy平面內在不同方向上運動,總淨施加側向力將大體上為零,以至於其整體上相互抵消。In the alternative embodiment shown in FIG. 6, each individual abrasive element 210 is individually actuated by an individual actuator 250 (eg, with a piezoelectric element). The actuator 250 moves laterally (ie in the xy plane) its respective grinding element 210 under the control of the control unit 260. This force can be applied in a coordinated manner, so that as the grinding element 210 moves in different directions in the xy plane, the total net applied lateral force will be substantially zero, so that it cancels each other out as a whole.

可使用以下條項進一步描述實施例: 1. 一種裝置,其包含: 基板基底; 複數個研磨元件,研磨元件中之每一者藉由各別耦接元件機械耦接至基板基底。 2. 如條項1之裝置,其中基板基底包含倍縮光罩基底。 3. 如條項1之裝置,另外其中各別研磨元件中之每一者包含壓電元件,該壓電元件經配置以在控制單元的控制下橫向移動各別研磨元件。 4. 如條項1之裝置,其中各別耦接元件中之每一者包含各別撓曲件。 5. 如條項4之裝置,其中每一各別撓曲件經預裝載。 6. 如條項4之裝置,其中每一各別撓曲件具有大體上垂直於基板基底的方向上之低彈簧常數。 7. 如條項4之裝置,每一各別撓曲件具有大體上垂直於基板基底的方向上的介於約50 N/m至約5000 N/m範圍內之彈簧常數。 8. 如條項1之裝置,其中複數個研磨元件中之每一者大體上具有相同的形狀及尺寸。 9. 如條項1之裝置,其中複數個研磨元件配置成陣列。 10. 如條項9之裝置,其中陣列為有序陣列。 11. 如條項9之裝置,其中陣列大體上覆蓋基板基底。 12. 如條項1之裝置,其中研磨元件中之每一者包含陶瓷材料。 13. 如條項1之裝置,其中對於研磨元件中之每一者,研磨元件與基板基底之間的距離由止擋件限制。 14. 一種粗化半導體光微影裝置中之夾具之表面的方法,該方法包含以下步驟: 將粗化基板裝載至平台上,該粗化基板具有具備複數個研磨元件的面; 使粗化基板與夾具對準,使得具有瘤節的夾具之表面與具有研磨元件的粗化基板之表面相對; 使研磨元件壓靠夾具之表面; 藉由在大體上平行於夾具之表面的平面內平移研磨元件直至獲得所需粗糙度來粗化瘤節; 將粗化基板移動遠離夾具; 將粗化基板移動至粗化倍縮光罩可自平台卸載的位置;以及 自平台卸載粗化基板。 15. 如條項14之方法,其中在大體上平行於夾具之表面的平面內平移粗化基板直至獲得所需粗糙度的步驟包含確定瘤節具有所需粗糙度的時間。 16. 如條項15之方法,其中確定獲得所需粗糙度的時間包含確定已知導致所需粗糙度的時間量已過的時間。 17. 如條項15之方法,其中確定已獲得所需粗糙度的時間包含感測瘤節的粗糙度。 18. 如條項14之方法,其中藉由在大體上平行於夾具之表面的平面內大體上平移研磨元件直至獲得所需粗糙度來粗化瘤節包含移動基板。 19. 如條項14之方法,其中複數個研磨元件機械耦接至各別致動器,並且其中藉由在大體上平行於夾具之表面的平面內大體上平移研磨元件直至獲得所需粗糙度來粗化瘤節包含使致動器在大體上平行於夾具之表面的平面內大體上移動其各別研磨元件。 20. 如條項19之方法,其中致動器包含壓電元件。The following items can be used to further describe the embodiment: 1. A device comprising: Substrate base A plurality of polishing elements, each of the polishing elements is mechanically coupled to the substrate base through a separate coupling element. 2. The device as described in item 1, wherein the substrate base includes a double reticle base. 3. The device of clause 1, further wherein each of the individual polishing elements includes a piezoelectric element configured to move the individual polishing elements laterally under the control of the control unit. 4. The device of clause 1, wherein each of the separate coupling elements includes a separate flexure. 5. The device of clause 4, where each individual flexure is preloaded. 6. The device of clause 4, wherein each individual flexure has a low spring constant in a direction substantially perpendicular to the base of the substrate. 7. As in the device of clause 4, each individual flexure has a spring constant in the range of approximately 50 N/m to approximately 5000 N/m in a direction substantially perpendicular to the substrate base. 8. The device of clause 1, wherein each of the plurality of abrasive elements has substantially the same shape and size. 9. The device according to item 1, wherein a plurality of grinding elements are arranged in an array. 10. The device of clause 9, wherein the array is an ordered array. 11. The device of clause 9, wherein the array substantially covers the substrate base. 12. The device of clause 1, wherein each of the abrasive elements comprises ceramic material. 13. The device of clause 1, wherein for each of the polishing elements, the distance between the polishing element and the substrate base is limited by the stopper. 14. A method for roughening the surface of a jig in a semiconductor photolithography device, the method includes the following steps: Loading the roughened substrate onto the platform, the roughened substrate having a surface with a plurality of grinding elements; Align the roughened substrate with the jig so that the surface of the jig with nodules is opposite to the surface of the roughened substrate with abrasive elements; Press the grinding element against the surface of the fixture; Roughening the nodules by translating the grinding element in a plane substantially parallel to the surface of the fixture until the desired roughness is obtained; Move the roughened substrate away from the fixture; Move the roughened substrate to a position where the roughened reticle can be unloaded from the platform; and Unload the roughened substrate from the platform. 15. The method of clause 14, wherein the step of translating the roughened substrate in a plane substantially parallel to the surface of the fixture until the desired roughness is obtained includes determining the time at which the nodule has the desired roughness. 16. The method of clause 15, wherein determining the time to obtain the desired roughness includes determining the time that the amount of time known to cause the desired roughness has passed. 17. The method of clause 15, wherein the time to determine that the desired roughness has been obtained includes sensing the roughness of the nodule. 18. The method of clause 14, wherein roughening the nodule by moving the abrasive element substantially in a plane substantially parallel to the surface of the fixture until a desired roughness is obtained includes moving the substrate. 19. The method of clause 14, wherein a plurality of abrasive elements are mechanically coupled to the respective actuators, and wherein the abrasive elements are translated substantially in a plane substantially parallel to the surface of the fixture until the desired roughness is obtained Roughening the nodule involves causing the actuator to move its respective abrasive element substantially in a plane substantially parallel to the surface of the fixture. 20. The method of clause 19, wherein the actuator comprises a piezoelectric element.

憑藉說明特定功能及其關係之實施之功能建置區塊來製作本發明。為便於描述,本文已任意地定義此等功能建置區塊之邊界。只要適當地執行指定功能及其關係,便可界定替代邊界。舉例而言,度量模組功能可在若干系統之間劃分,或至少部分地藉由整個控制系統來執行。The invention is made with function building blocks that illustrate the implementation of specific functions and their relationships. For ease of description, this article has arbitrarily defined the boundaries of these functional building blocks. As long as the specified functions and their relationships are properly performed, alternative boundaries can be defined. For example, the measurement module function can be divided among several systems, or at least partially performed by the entire control system.

以上描述包括一或多個實施例之實例。當然,不可能出於描述前述實施例之目的而描述組件或方法之每一可想到的組合,但一般熟習此項技術者可認識到,各種實施例之許多另外組合及排列為可能的。因此,所描述之實施例意欲包涵屬於隨附申請專利範圍之精神及範疇的所有此等變更、修改及變化。此外,就術語「包括」用於實施方式或申請專利範圍中而言,此術語意欲以類似於術語「包含」而在「包含」作為過渡詞用於一技術方案中時所解釋之方式而為包括性的。此外,儘管所描述之態樣及/或實施例的元件可以單數形式來描述或主張,但除非明確陳述單數限制,否則亦涵蓋複數。另外,除非另有說明,否則任何態樣及/或實施例之全部或一部分可結合任何其他態樣及/或實施例之全部或一部分加以利用。The above description includes examples of one or more embodiments. Of course, it is impossible to describe every conceivable combination of components or methods for the purpose of describing the foregoing embodiments, but those of ordinary skill in the art will recognize that many additional combinations and arrangements of various embodiments are possible. Therefore, the described embodiments are intended to encompass all such changes, modifications, and changes that fall within the spirit and scope of the accompanying patent application. In addition, as far as the term "comprising" is used in an embodiment or in the scope of a patent application, this term is intended to be interpreted in a manner similar to the term "comprising" when "comprising" is used as a transitional term in a technical solution. Inclusive. In addition, although elements of the described aspects and/or embodiments may be described or claimed in the singular, unless the singular limit is explicitly stated, the plural is also covered. In addition, unless otherwise stated, all or part of any aspect and/or embodiment may be utilized in combination with all or part of any other aspect and/or embodiment.

100‧‧‧微影裝置 110‧‧‧靜電夾具 120‧‧‧夾具下部部分 130‧‧‧夾具上部部分 140‧‧‧瘤節 150‧‧‧平面 160‧‧‧第一電極 170‧‧‧接地電極 180‧‧‧空隙 200‧‧‧倍縮光罩 210‧‧‧研磨元件 220‧‧‧倍縮光罩基底 230‧‧‧撓曲件 240‧‧‧止擋件 250‧‧‧致動器 260‧‧‧控制單元 B‧‧‧輻射光束 C‧‧‧目標部分 IL‧‧‧照明器 M1‧‧‧光罩對準標記 M2‧‧‧光罩對準標記 MA‧‧‧圖案化器件 MT‧‧‧圖案支撐件 P1‧‧‧基板對準標記 P2‧‧‧基板對準標記 PM‧‧‧第一定位器 PS‧‧‧投影系統 PW‧‧‧第二定位器 SO‧‧‧輻射源 W‧‧‧基板 WT‧‧‧基板台 S500‧‧‧步驟 S510‧‧‧步驟 S520‧‧‧步驟 S530‧‧‧步驟 S540‧‧‧步驟 S550‧‧‧步驟 S560‧‧‧步驟100‧‧‧Photolithography device 110‧‧‧Static fixture 120‧‧‧ Lower part of fixture 130‧‧‧ Upper part of fixture 140‧‧‧ 150‧‧‧plane 160‧‧‧First electrode 170‧‧‧Ground electrode 180‧‧‧Gap 200‧‧‧X Shrink Light Mask 210‧‧‧Abrasive components 220‧‧‧X Shrink Mask Base 230‧‧‧flexion piece 240‧‧‧stop 250‧‧‧Actuator 260‧‧‧Control unit B‧‧‧radiation beam C‧‧‧Target part IL‧‧‧Illuminator M1‧‧‧ Mask alignment mark M2‧‧‧ Mask alignment mark MA‧‧‧patterned device MT‧‧‧pattern support P1‧‧‧Substrate alignment mark P2‧‧‧Substrate alignment mark PM‧‧‧First locator PS‧‧‧Projection system PW‧‧‧Second positioner SO‧‧‧radiation source W‧‧‧Substrate WT‧‧‧Substrate table S500‧‧‧Step S510‧‧‧Step S520‧‧‧Step S530‧‧‧Step S540‧‧‧Step S550‧‧‧Step S560‧‧‧Step

圖1描繪根據本發明實施例之態樣之微影裝置。FIG. 1 depicts a lithographic apparatus according to an embodiment of the present invention.

圖2描繪傳統邊緣夾具之部分橫截面並示意性地示出夾具壓力。Fig. 2 depicts a partial cross-section of a conventional edge clamp and schematically shows clamp pressure.

圖3為根據本發明實施例之態樣的粗化基板的平面圖。3 is a plan view of a roughened substrate according to an embodiment of the present invention.

圖4A為根據本發明實施例之態樣之粗化基板的截面圖。4A is a cross-sectional view of a roughened substrate according to an embodiment of the present invention.

圖4B為根據本發明實施例之態樣的與夾具嚙合的粗化基板的剖視圖。4B is a cross-sectional view of a roughened substrate engaged with a jig according to an embodiment of the present invention.

圖5為說明根據本發明實施例之態樣之粗化夾具表面之方法的流程圖。FIG. 5 is a flowchart illustrating a method of roughening a jig surface according to an embodiment of the present invention.

圖6為根據本發明實施例之態樣之粗化基板的平面圖。6 is a plan view of a roughened substrate according to an embodiment of the present invention.

下文參考附圖詳細描述本發明之其他特徵及優勢,以及本發明之各種實施例之結構及操作。應注意,本發明不限於本文中所描述之特定實施例。本文中僅出於說明性目的而呈現此類實施例。基於本文中含有之教示,額外實施例對於熟習此項技術者而言將顯而易見。The following describes in detail other features and advantages of the present invention, as well as the structure and operation of various embodiments of the present invention, with reference to the accompanying drawings. It should be noted that the present invention is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only. Based on the teachings contained herein, additional embodiments will be apparent to those skilled in the art.

200‧‧‧倍縮光罩 200‧‧‧X Shrink Light Mask

210‧‧‧研磨元件 210‧‧‧Abrasive components

220‧‧‧倍縮光罩基底 220‧‧‧X Shrink Mask Base

230‧‧‧撓曲件 230‧‧‧flexion piece

240‧‧‧止擋件 240‧‧‧stop

Claims (13)

一種裝置,其包含: 一基板基底; 複數個研磨元件,該等研磨元件中之每一者藉由一各別耦接元件機械耦接至該基板基底。An apparatus comprising: A substrate base; A plurality of polishing elements, each of which is mechanically coupled to the substrate base by a separate coupling element. 如請求項1之裝置,其中該基板基底包含一倍縮光罩基底。The device according to claim 1, wherein the substrate base comprises a double reticle base. 如請求項1之裝置,另外其中該等各別研磨元件中之每一者包含一壓電元件,該壓電元件經配置以在一控制單元的控制下橫向移動該各別研磨元件。The device of claim 1, further wherein each of the respective abrasive elements includes a piezoelectric element configured to move the respective abrasive elements laterally under the control of a control unit. 如請求項1之裝置,其中該等各別耦接元件中之每一者包含一各別撓曲件。The device of claim 1, wherein each of the respective coupling elements includes a separate flexure. 如請求項4之裝置,其中每一各別撓曲件經預裝載。The device of claim 4, wherein each individual flexure is preloaded. 如請求項4之裝置,其中每一各別撓曲件具有大體上垂直於該基板基底的一方向上之一低彈簧常數。The device of claim 4, wherein each individual flexure has a low spring constant in a direction generally perpendicular to the base of the substrate. 如請求項4之裝置,每一各別撓曲件具有大體上垂直於該基板基底的一方向上的介於約50 N/m至約5000 N/m範圍內之一彈簧常數。As in the device of claim 4, each individual flexure has a spring constant in a range of about 50 N/m to about 5000 N/m that is substantially perpendicular to a direction of the substrate base. 如請求項1之裝置,其中該複數個研磨元件中之每一者大體上具有相同的形狀及尺寸。The device of claim 1, wherein each of the plurality of abrasive elements has substantially the same shape and size. 如請求項1之裝置,其中該複數個研磨元件配置成一陣列。The device of claim 1, wherein the plurality of grinding elements are arranged in an array. 如請求項9之裝置,其中該陣列為一有序陣列。The device of claim 9, wherein the array is an ordered array. 如請求項9之裝置,其中該陣列大體上覆蓋該基板基底。The device of claim 9, wherein the array substantially covers the substrate base. 如請求項1之裝置,其中該等研磨元件中之每一者包含一陶瓷材料。The device of claim 1, wherein each of the abrasive elements includes a ceramic material. 如請求項1之裝置,其中對於該等研磨元件中之每一者,該研磨元件與該基板基底之間的一距離藉由一止擋件限制。The device of claim 1, wherein for each of the polishing elements, a distance between the polishing element and the substrate base is limited by a stopper.
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