TW201945087A - Rapid chamber clean using concurrent in-situ and remote plasma sources - Google Patents

Abstract

A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.

Description

Fast chamber cleaning using parallel in-situ and remote plasma sources

This disclosure relates to a substrate processing system, and more specifically to a system and method for cleaning a processing chamber of a substrate processing system.

The background description provided herein is for the purpose of presenting the background of this disclosure in a general way. The work results of the currently listed inventors (in terms of the scope described in this prior art section), and the implementation of the description of the prior art that may not otherwise qualify as the application, are not explicitly or implicitly Ground is recognized as prior art relative to this disclosure.

The substrate processing system may be used to perform etching, deposition, and / or other processing of substrates (such as semiconductor wafers). Exemplary processes that can be performed on a substrate include, but are not limited to: chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) ), And / or other etching, deposition, and cleaning processes. In a processing chamber of a substrate processing system, a substrate may be placed on a substrate support such as a pedestal, an electrostatic chuck (ESC), or the like. For example, during processing, a gas mixture is introduced into the processing chamber, and the plasma can be ignited to enhance the chemical reaction within the processing chamber.

After several substrates have been processed within the processing chamber, membranes and / or other reactants may accumulate on the sidewalls of the processing chamber, substrate supports, and other components located within the processing chamber. The chamber cleaning process is performed periodically to remove buildup of membranes and / or other reactants. Since the substrate cannot be processed during the chamber cleaning process, it is important to minimize the time required to perform the chamber cleaning process.

A method for cleaning a processing chamber of a substrate processing system includes: supplying nitrogen trifluoride (NF ₃ ) gas to a remote plasma source (RPS); using RPS to generate an RPS plasma; and supplying the RPS plasma to the processing chamber Supply the NF ₃ gas as a bypass gas to the processing chamber; ignite the in-situ plasma in the processing chamber while supplying the RPS plasma; and use both RPS and in-situ plasma to clean during the cleaning period Processing chamber.

In other features, the method includes extinguishing the in-situ plasma after the cleaning period and not supplying the RPS plasma to the processing chamber. The substrate processing system performs chemical vapor deposition (CVD). The substrate processing system uses an oxide precursor gas to deposit silicon dioxide (SiO ₂ ) on the substrate. The oxide precursor gas includes tetraethyl orthosilicate (TEOS) gas. The substrate processing system performs atomic layer deposition (ALD).

In other features, the substrate processing system uses an oxide precursor gas to deposit silicon dioxide (SiO ₂ ). The oxide precursor gas includes tetraethyl orthosilicate (TEOS) gas. RF power in the range from 500 Watts to 3000 Watts is used to generate in-situ plasma. RF power in the range from 1000 watts to 2000 watts is used to generate an in situ plasma. RF power in the range from 1400 watts to 1600 watts is used to generate the in situ plasma.

In other features, the gas flow rate to RPS is in the range of 90% to 110% of the most efficient flow rate of the chamber operating parameters used during the method. The gas flow rate to RPS is in the range of 95% to 105% of the most efficient flow rate of the chamber operating parameters used during the method.

In other features, the gas flow rate from NF ₃ gas to RPS is in the range from 10 to 12 slm. The gas flow rate of NF ₃ gas to the processing chamber is in the range from 3 to 5 slm.

In other features, the method includes maintaining a first pressure in the processing chamber during a first portion of the first period; and maintaining a second pressure different from the first pressure in the processing chamber during a second portion of the first period pressure.

In other features, the first pressure is in a range from 2 to 4 Torr, and the second pressure is in a range from 0.5 to 2 Torr. The method includes maintaining the temperature of the substrate support in a range of 350 ° C and 650 ° C during the first period. The method includes maintaining the temperature of the substrate support in a range of 445 ° C and 550 ° C during the first period.

Further scope of the practicality of this disclosure will become apparent from the implementation section, the scope of patent applications, and the drawings. The implementation sections and specific examples are for the purpose of description only, and are not intended to limit the scope of this disclosure.

The system and method according to the present disclosure are used to clean films and other reactants on the inner surface of a substrate processing chamber at an increased etch rate to reduce the chamber cleaning cycle time. In some examples, chamber cleaning may be improved from an etch rate of about 1.4 microns / minute to an etch rate greater than 5 microns / minute. The remote plasma source (RPS) is supplied with nitrogen trifluoride (NF ₃ ) gas (or a mixture of NF ₃ and an inert gas), and the RPS plasma is supplied to the processing chamber. When supplying the RPS plasma, a bypassed NF ₃ gas is used to ignite the in-situ plasma, as will be described further below. Dual-path delivery with NF ₃ to RPS and bypass gas to the processing chamber, allowing additional NF _{3 to} flow into the processing chamber beyond the maximum and most efficient NF ₃ flow rate through RPS to achieve higher etching rate.

Referring now to FIG. 1, an example substrate processing system 100 is shown for performing substrate processing, such as etching or deposition using an RF plasma. The substrate processing system 100 includes a processing chamber 102 that surrounds other components of the substrate processing system 100 and houses an RF plasma. The substrate processing system 100 includes an upper electrode 104 and a substrate support 106 (for example, an electrostatic chuck (ESC)). During operation, the substrate 108 is disposed on a substrate support 106.

For example only, the upper electrode 104 may include a shower head 109 that introduces and distributes a process and a cleaning gas. The shower head 109 may include a handle portion including one end connected to a top surface of the processing chamber. The base portion is substantially cylindrical and extends radially outward from an opposite end of the handle portion at a position spaced from the top surface of the processing chamber. The surface or panel of the base portion of the shower head facing the substrate includes a plurality of holes through which a process gas or a purge gas flows. Alternatively, the upper electrode 104 may include a guide plate, and the process gas may be introduced in another manner.

The bottom plate 110 supports a heating plate 112, which corresponds to a ceramic multi-zone heating plate. The substrate support 106 includes a bottom plate 110 as a lower electrode. The thermal resistance layer 114 may be disposed between the heating plate 112 and the bottom plate 110. The bottom plate 110 may include one or more coolant channels 116 to allow coolant to flow through the bottom plate 110.

The RF generating system 120 generates and outputs RF power to one of the upper electrode 104 and the lower electrode (for example, the bottom plate 110 of the substrate support 106). The other of the upper electrode and the lower electrode may be DC ground, AC ground, or floating. For example only, the RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage that is supplied to the upper electrode 104 or the bottom plate 110 through a matching and distribution network 124. In other examples, the plasma may be induced inductively. In some examples, the RF generation system 120 supplies RF power in a range from 500 Watts to 3000 Watts. In some examples, the RF generation system 120 supplies RF power in a range from 1000 Watts to 2000 Watts. In some examples, the RF generation system 120 supplies RF power in a range from 1400 Watts to 1600 Watts. For example, the RF generation system 120 may supply RF power at 1500 watts, but other RF power levels may be used. In some examples, the RF generation system 120 may operate at 13.26 MHz, but other frequencies may be used.

The first gas delivery system 130 includes one or more gas sources 132 and 133, the one or more gas sources 132 and 133 supplying nitrogen trifluoride (NF ₃₎ gas, and / or one or more inert gases, respectively. The gas sources 132, 133 are connected to mass flow controllers (MFCs) 136-1, 136-2, and 136-3 through one or more valves 134-1, 134-2, and 134-3. The output of the MFCs 136-1 and 136-2 is fed into an optional hybrid manifold 137, which is in fluid communication with a remote plasma source (RPS) 138. In some examples, RPS 138 includes a microwave-based RPS, a plasma tube, or other RPS.

The RPS 138 generates a remote plasma that is selectively supplied to the processing chamber 102. In some examples, NF ₃ is supplied to RPS 138 at a flow rate that is most efficient for dissociation under the process parameters used. In some examples, NF ₃ is supplied to RPS 138 at a flow rate ranging from 90 to 110% of the most efficient flow rate for dissociation. Generally, the RPS 138 specifies efficiency based on the chamber parameters used, such as pressure, temperature, and / or clean gas species. Certain formulations may require some experimentation. In some examples, NF ₃ is supplied to RPS 138 at a flow rate within 95 to 105% of the most efficient flow rate for dissociation.

The gas source 132 is connected to the processing chamber 102 via a valve 134-3 and an MFC 136-3. Alternatively, a separate gas source can be used for the NF ₃ bypass gas. In other words, the MFC 136-3 supplies the bypassed NF ₃ gas to the output duct from the RPS 138, or directly to the processing chamber 102. In some examples, the RPS plasma is activated, the in-situ plasma is ignited, and both the RPS and the in-situ plasma are maintained during the cleaning period, the in-situ plasma is extinguished and then the RPS plasma is stopped. In other examples, the RPS plasma and the in-situ plasma are activated at approximately the same time, maintained during approximately the same cleaning period, and stopped / extinguished at approximately the same time. In some examples, the RPS plasma may be maintained for a predetermined period of time before the in-situ plasma is ignited or after it is extinguished, respectively.

The second gas delivery system 141 may include one or more valves, MFCs, and manifolds (not shown) to deliver other gases or gas mixtures, such as a carrier gas, a gas precursor, and / or a purged gas for cleaning the chamber Used during substrate processing and / or used to clean the processing chamber. For example, the gas delivery system 141 may be used to supply a precursor gas including a silicon (Si) or silicon dioxide (SiO ₂ ) precursor. In some examples, the precursor gas includes tetraethyl orthosilicate (TEOS) and a silicon dioxide (SiO ₂ ) film is deposited.

The temperature controller 142 may be connected to a plurality of thermal control units (TCE) 144 provided in the heating plate 112. For example, the TCE 144 may include (but is not limited to): individual macroscopic TCEs, which correspond to each zone in the multi-zone heating plate; and / or an array of micro TCEs, which are arranged throughout the multiple zones of the multi-zone heating plate Not shown). The temperature controller 142 can be used to control the plurality of TCEs 144 to control the temperature of the substrate support 106 and the substrate 108.

The temperature controller 142 may communicate with a coolant assembly 146 to control the coolant flow in the coolant passage 116. For example, the coolant assembly 146 may include a coolant pump and reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant passage 116 to control the temperature of the substrate support 106.

Reactants can be evacuated from the processing chamber 102 using a valve 150 and a pump 152. The system controller 160 may be used to control the elements of the substrate processing system 100. Although shown as a separate controller, the temperature controller 142 may be implemented within the system controller 160. The temperature controller 142 may be further configured to implement one or more models to estimate the temperature of the substrate support 106 according to the principles of the present disclosure.

Referring now to FIG. 2, a method 250 for performing a chamber cleaning process according to the present disclosure is shown. At 252, the method determines whether to perform chamber cleaning. When 252 is YES, the method removes the substrate from the processing chamber as needed, and sets the chamber pressure to a predetermined pressure range.

In some examples, the predetermined chamber pressure is in a range from 0.25 Torr to 6 Torr. In some examples, the chamber pressure during the cleaning process is adjusted between two or more discrete pressure values. In some examples, the first step is performed during the first part of the cleaning period at a first pressure in the range of 2 to 4 Torr, and the second step is performed during the second part of the cleaning period after the first part at 0.5 to 2 Carrying out the pressure. In other examples, the higher pressure step occurs before the lower pressure step. In still other examples, the pressure is monotonically decreased or monotonically increased during the cleaning process.

In some examples, the temperature of the substrate support is controlled to a predetermined temperature during the cleaning period, the predetermined temperature being in a range between 350 ° C and 650 ° C. In some examples, the temperature of the substrate support is controlled to a predetermined temperature during the cleaning period, the predetermined temperature being in a range between 445 ° C and 550 ° C.

At 258, the NF ₃ gas system is supplied to the RPS and an RPS plasma is generated. At 262, the RPS plasma system is supplied to the processing chamber. When supplying the RPS plasma to the processing chamber, the bypassed NF ₃ gas system is supplied to the RPS output conduit or directly to the processing chamber, and the in-situ plasma is generated by supplying RF power. At 272, the method determines whether the cleaning period is over. When 272 is "No", the method continues from 258. Otherwise, the in-situ plasma is extinguished at 276, the RPS plasma is stopped and the method returns to the original.

In some examples, the RPS plasma and the in-situ plasma are respectively supplied and ignited sequentially or at about the same time, and the in-situ plasma and the RPS plasma are extinguished / stopped respectively or sequentially. In other examples, the RPS plasma is supplied at the first time, the bypass gas is supplied and the in-situ plasma is ignited at a second time that occurs at a predetermined time period after the first time. Both the RPS plasma and the in-situ plasma are supplied at the same time during the cleaning period. After the cleaning period, the in-situ plasma and the RPS plasma are stopped / extinguished at about the same time, or, with or without an intermediate period, the in-situ plasma is sequentially turned off and then the RPS plasma is stopped.

In still other examples, an inert gas flow is initiated for RPS and an RPS plasma is generated. The RPS system is then switched to NF ₃ and one or more inert gases. Next, a NF ₃ bypass gas is supplied for the in-situ plasma, and the in-situ plasma is ignited. In some examples, NF ₃ and inert gas flows can be adjusted to final or steady-state setpoint flows. The in situ RF power can be adjusted to the final or steady state RF power level. The RPS and in-situ cleaning of the chamber are performed for a cleaning period. When the cleaning period ends, the in-situ RF and bypass gas flow is turned off. Turn off the RPS NF ₃ gas flow and the RPS plasma.

Referring now to FIG. 3, an exemplary cleaning process is shown. The NF ₃ gas is supplied to the RPS, and the bypassed NF ₃ gas is supplied to the processing chamber. RPS and in situ plasma are initiated and maintained during the cleaning period. In some examples, the chamber pressure varies as described above.

Referring now to FIG. 4, a diagram illustrates an example of an improvement in etching rate measured on a sample located in a processing chamber during a cleaning process according to the prior art and the present disclosure. At 300, the processing chamber was cleaned using an RPS plasma without an in-situ plasma. For example, the NF ₃ gas system is supplied to the RPS at a flow rate of about 11 slm. At 310, the processing chamber is cleaned with an RPS plasma at a higher NF ₃ gas flow rate without an in-situ plasma. For example, the NF ₃ gas system supplied to the RPS increases to a flow rate of about 15 slm. As can be seen, there is a slight improvement in the etch rate. At 320, the processing chamber is cleaned using an RPS plasma and an in-situ plasma without a bypassed NF ₃ gas. The NF ₃ gas system is supplied to the RPS at a flow rate of about 11 slm. As can be seen, there is a slight improvement over the 310 etch rate.

At 330, the processing chamber is cleaned using an RPS plasma and an in-situ plasma without a bypassed NF ₃ gas. The NF ₃ gas system is supplied to the RPS at a higher gas flow rate of about 15 slm. As can be seen, there is a slight improvement over the 320 etch rate.

At 330, the processing chamber is cleaned using an RPS plasma and an in-situ plasma with NF ₃ gas with a bypass. The NF ₃ gas system is supplied to the RPS at a flow rate of about 11 slm, while the bypassed NF ₃ gas system is supplied at a flow rate of about 4 slm. As can be seen, there are significant improvements over 300, 310, 320, and 330 etch rates. Compared to the baseline at 300, the etch rate increased from 80% improvement at 330 to 140% improvement at 340.

Referring now to FIG. 5, during a cleaning process 300-340 according to the prior art and the present disclosure, the percentage increase in etch rate measured for a sample located in a processing chamber is shown. When using an in-situ plasma and an RPS plasma in combination with a bypassed NF ₃ gas, a significant improvement in the etch rate percentage can be seen.

Referring now to FIG. 6, the chamber cleaning method described herein reduces the cleaning period for the chamber cleaning process for equal etch efficiency. In FIG. 6, a process using an in-situ and RPS plasma combined with a bypassed NF ₃ gas is compared with a baseline cleaning process 300. In this example, compared to the baseline cleaning process 300, the cleaning process period is reduced by more than 40%.

In one example, a cleaning period of approximately 90 seconds is used to remove a 7 micron chamber film buildup. In other examples, the cleaning period varies depending on the amount of film accumulation. In some examples, the cleaning period may be in a range from 20 seconds to 10 minutes. In other examples, the cleaning period may be in a range from 1 minute to 5 minutes.

The foregoing description is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses in any way. The extensive teachings of this disclosure can be implemented in a variety of forms. Therefore, even if the disclosure includes specific examples, the true scope of the invention should not be so limited, as other drawings will become apparent once the drawings, the description, and the scope of the following patent applications are studied. It must be understood that one or more steps in a method can be performed in a different order (or simultaneously) without changing the principles of the disclosure. Furthermore, although each embodiment has been described above as having certain features, any one or more of the features described in relation to any one of the embodiments of the disclosure may be implemented in any other embodiment , And / or may be combined with features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments still belongs to the scope of the present invention.

The spatial and functional relationships between components (eg, between modules, circuit components, semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent." "," Close "," above "," above "," below ", and" set ". Unless explicitly described as "direct", when the relationship between the first and second elements is described in the above disclosure, the relationship may be one in which no other intermediate element exists between the first and second elements The direct relationship may also be an indirect relationship in which there are one or more intermediate elements (spatially or functionally) between the first and second elements. As used herein, the words "at least one of A, B, and C" should be interpreted as logic (A or B or C) using the non-mutually exclusive logical symbol OR, and should not be interpreted as representing "at least one of A, At least one of B and at least one of C ".

In some embodiments, the controller is part of the system, which may be part of the foregoing paradigm. Such systems may include semiconductor processing equipment including: processing tools (or multiple processing tools), chambers (or multiple chambers), workbenches (or multiple tool tables) for processing, and / or specific processing elements ( (E.g. wafer base, airflow system, etc.). These systems can be combined with electronic devices to control the operation of the system before, during, and after the processing of semiconductor wafers or substrates. Such electronic devices may be referred to as "controllers", which may control various elements or sub-components of a system (or plural systems). Depending on the process requirements and / or the type of system, the controller can be programmed to control any process disclosed herein, including process gas delivery, temperature settings (such as heating and / or cooling), pressure settings, vacuum settings, power Settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positioning and operation settings, access tools and other transmission tools connected to or interfacing with a specific system, and / Or wafer transfer in load lock chamber.

Broadly speaking, a controller can be defined as an electronic device with various integrated circuits, logic, memory, and / or software that receive instructions, send instructions, control operations, allow cleaning operations, allow endpoint measurements, and so on. The integrated circuit may include a chip in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as special application integrated circuits (ASICs), and / or one of executing program instructions (such as software) or More microprocessors or microcontrollers. Program instructions can be instructions that communicate with the controller in the form of various individual settings (or program files), which define operating parameters that are used to perform specific processes on the semiconductor wafer, or for the semiconductor wafer, or the system. In some embodiments, the operating parameter may be part of a recipe defined by a process engineer, the recipe being used for one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits And / or during the fabrication of the die of the wafer, one or more processing steps are completed.

In some embodiments, the controller may be part of or connected to a computer, the computer being integrated with the system, connected to the system, or connected to the system through a network, or a combination thereof. For example, the controller can be located in the "cloud" or all or part of a fab host computer system, which can allow remote access to wafer processing. The computer can achieve remote access to the system to monitor the current process of manufacturing operations, view the history of past manufacturing operations, view trends or performance indicators from multiple manufacturing operations, change the parameters of the current process, and set the process Steps to continue the current process or start a new process. In some examples, a remote computer (such as a server) can provide process recipes to the system over a network, which can include a local area network or the Internet. The remote computer may include a user interface for entering or programming parameters and / or settings that are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data, specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that these parameters may be specific to the type of process to be performed and the type of tool (the controller is configured to interface with or control the tool through an interface). Thus, as described above, the controllers can be decentralized, for example by including one or more separate controllers that are connected together through a network and operate toward a common goal, such as the processes and controls described herein. An example of a separate controller for such use could be one or more integrated circuits on a chamber, one or more remotely located (eg, platform level, or part of a remote computer) or Multiple integrated circuits are connected, which are combined to control the processes on the chamber.

Exemplary systems may include a plasma etching chamber or module, a deposition chamber or module, a spin flushing chamber or module, a metal plating chamber or module, a clean chamber or module, a beveled etching chamber, or Modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers, or Modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be related to or used in the manufacture and / or production of semiconductor wafers, but are not limited thereto.

As mentioned above, depending on the process steps (or multiple process steps) to be performed by the tool, the controller can communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, traction tools , Nearby tools, tools throughout the factory, main computer, another controller, or tools for material transfer that bring wafer containers to or from tool locations and / or loading ports in a semiconductor manufacturing plant.

100‧‧‧ system

102‧‧‧Processing chamber

104‧‧‧up electrode

106‧‧‧ substrate support

108‧‧‧ substrate

109‧‧‧Sprinkler

110‧‧‧ floor

112‧‧‧Heating plate

114‧‧‧ Thermal Resistance Layer

116‧‧‧Coolant channel

120‧‧‧RF generation system

122‧‧‧RF voltage generator

124‧‧‧ Matching and Distribution Network

130‧‧‧The first gas delivery system

132‧‧‧Gas source

133‧‧‧Gas source

134-1‧‧‧Valve

134-2‧‧‧ Valve

134-3‧‧‧ Valve

136-1‧‧‧mass flow controller (MFC)

136-2‧‧‧MFC

136-3‧‧‧MFC

137‧‧‧mixed manifold

138‧‧‧Remote Plasma Source (RPS)

141‧‧‧Gas delivery system

142‧‧‧Temperature Controller

144‧‧‧Multiple Thermal Control Unit (TCE)

146‧‧‧Coolant assembly

150‧‧‧ valve

152‧‧‧Pump

160‧‧‧System Controller

250‧‧‧ Method

252‧‧‧box

258‧‧‧box

262‧‧‧box

272‧‧‧box

276‧‧‧box

300‧‧‧cleaning process

310‧‧‧cleaning process

320‧‧‧cleaning process

330‧‧‧cleaning process

340‧‧‧cleaning process

From the implementation section and accompanying drawings, this disclosure can be more fully understood, of which:

FIG. 1 is a functional block diagram of an example of a substrate processing system for processing a substrate in which a chamber cleaning process according to the present disclosure can be performed.

FIG. 2 is a flowchart illustrating an example of a method for performing a chamber cleaning process according to the present disclosure.

FIG. 3 is an example of a timing diagram of the supply of RPS plasma, in-situ plasma, RPS and bypassed NF ₃ gas and chamber pressure during the cleaning period.

FIG. 4 is a chart illustrating an example of an improvement in etch rate measured on a sample located in a processing chamber during a cleaning process according to the prior art and the present disclosure.

FIG. 5 is a chart illustrating an example of an increase in etch rate percentage measured on a sample located in a processing chamber during a cleaning process according to the prior art and the present disclosure.

FIG. 6 is a diagram illustrating an example of a reduced cleaning period for a chamber cleaning process according to the prior art and the present disclosure.

In the drawings, reference numbers may be reused to indicate similar and / or identical elements.

Claims (19)

A method for cleaning a processing chamber of a substrate processing system includes: supplying nitrogen trifluoride (NF ₃ ) gas to a remote plasma source (RPS); generating an RPS plasma using the RPS; The plasma is supplied to the processing chamber; the NF ₃ gas is supplied to the processing chamber as a bypass gas; the in-situ plasma is ignited in the processing chamber, and the RPS plasma is simultaneously supplied; and the RPS plasma is used and Both the in-situ plasma cleans the processing chamber during a cleaning period. For example, the method of claim 1 for cleaning a processing chamber of a substrate processing system further comprises extinguishing the in-situ plasma after the cleaning period and not supplying the RPS plasma to the processing chamber. For example, the method of claim 1 for cleaning a processing chamber of a substrate processing system, wherein the substrate processing system performs chemical vapor deposition (CVD). For example, a method for cleaning a processing chamber of a substrate processing system according to item 3 of the patent application, wherein the substrate processing system uses an oxide precursor gas to deposit silicon dioxide (SiO ₂ ) on a substrate. For example, the method of claim 4 for cleaning a processing chamber of a substrate processing system, wherein the oxide precursor gas includes tetraethyl orthosilicate (TEOS) gas. For example, the method of claim 1 for cleaning a processing chamber of a substrate processing system, wherein the substrate processing system performs atomic layer deposition (ALD). For example, the method of claim 6 for cleaning a processing chamber of a substrate processing system, wherein the substrate processing system uses an oxide precursor gas to deposit silicon dioxide (SiO ₂ ). For example, the method of claim 7 for cleaning a processing chamber of a substrate processing system, wherein the oxide precursor gas includes tetraethyl orthosilicate (TEOS) gas. For example, the method for cleaning a processing chamber of a substrate processing system in the first scope of the patent application, wherein the in-situ plasma is generated using RF power in a range from 500 Watts to 3000 Watts. For example, the method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application range, wherein the in-situ plasma is generated using RF power in a range from 1000 Watts to 2000 Watts. For example, a method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application range, wherein the in-situ plasma is generated using RF power in a range from 1400 watts to 1600 watts. For example, the method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application range, wherein the gas flow rate to the RPS is at the most efficient flow rate for the operating parameters of the chamber during the method Within the range of 90% to 110%. For example, the method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application range, wherein the gas flow rate to the RPS is at the most efficient flow rate for the operating parameters of the chamber during the method 95% to 105%. For example, the method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application, wherein the gas flow rate of the NF ₃ gas to the RPS is in a range from 10 to 12 slm. For example, the method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application, wherein the gas flow rate of the NF ₃ gas to the processing chamber is in a range from 3 to 5 slm. The method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application, further comprising: maintaining a first pressure in the processing chamber during a first portion of the cleaning period; and A second pressure different from the first pressure is maintained in the processing chamber during a second part of the cleaning period. For example, the method of claim 16 for cleaning a processing chamber of a substrate processing system, wherein the first pressure is in a range from 2 to 4 Torr, and the second pressure is in a range from 0.5 to 2 In the range of care. For example, the method for cleaning a processing chamber of a substrate processing system according to item 1 of the patent application scope further includes maintaining the temperature of the substrate support in the range of 350 ° C. and 650 ° C. during the cleaning period. For example, the method of claim 1 for cleaning a processing chamber of a substrate processing system further includes maintaining the temperature of the substrate support in the range of 445 ° C and 550 ° C during the cleaning period.