TW201935442A - Wiring member not causing cracking or peeling of a cured film when bending the wiring member - Google Patents

Wiring member not causing cracking or peeling of a cured film when bending the wiring member Download PDF

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Publication number
TW201935442A
TW201935442A TW108103499A TW108103499A TW201935442A TW 201935442 A TW201935442 A TW 201935442A TW 108103499 A TW108103499 A TW 108103499A TW 108103499 A TW108103499 A TW 108103499A TW 201935442 A TW201935442 A TW 201935442A
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Prior art keywords
wiring member
polymer
cured film
group
film
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TW108103499A
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Chinese (zh)
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TWI795523B (en
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鄭康巨
勝井宏充
藤澤友久
浜口仁
多田羅了嗣
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日商Jsr股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16Constructional details or arrangements
    • G06F1/1613Constructional details or arrangements for portable computers
    • G06F1/1615Constructional details or arrangements for portable computers with several enclosures having relative motions, each enclosure supporting at least one I/O or computing function
    • G06F1/1616Constructional details or arrangements for portable computers with several enclosures having relative motions, each enclosure supporting at least one I/O or computing function with folding flat displays, e.g. laptop computers or notebooks having a clamshell configuration, with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16Constructional details or arrangements
    • G06F1/1613Constructional details or arrangements for portable computers
    • G06F1/1633Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1641Details related to the display arrangement, including those related to the mounting of the display in the housing the display being formed by a plurality of foldable display components
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

The present invention provides a wiring member which is excellent in bending characteristics and capable of forming wiring at a narrow pitch. The wiring member of the present invention includes a substrate and a cured film disposed on the upper layer of the substrate, and cracking or peeling of the cured film does not occur when the substrate surface of the wiring member on the side opposite to the cured film is bent by 180DEG along a core rod having an outer diameter of 0.5 mm.

Description

配線構件Wiring member

本發明是關於一種配線構件。The present invention relates to a wiring member.

近年來,利用顯示裝置的具有柔軟性的材料開發可撓性顯示裝置來代替平板上的顯示裝置。可撓性顯示裝置具有能夠折曲的特性,因此利用所述特性而提供有多種縮小了非主動區域(非顯示區域)的寬度的顯示裝置(例如參照專利文獻1、專利文獻2)。
[現有技術文獻]
[專利文獻]
In recent years, a flexible display device has been developed using a flexible material of the display device instead of the display device on a flat panel. The flexible display device has a characteristic of being able to be bent. Therefore, a variety of display devices are provided in which the width of the inactive area (non-display area) is reduced by using the characteristic (for example, refer to Patent Documents 1 and 2).
[Prior Art Literature]
[Patent Literature]

[專利文獻1]日本專利特表2014-512556號公報
[專利文獻2]日本專利特開2017-111435號公報
[Patent Document 1] Japanese Patent Publication No. 2014-512556
[Patent Document 2] Japanese Patent Laid-Open No. 2017-111435

[發明所要解決的問題]
通常的可撓性顯示裝置中,為了將與非顯示區域的一部分相對應的邊框抑制為最小限度,有時採用如下形態:將彎曲(bending)區域以極小的曲率屈曲,並將用以進行圖像輸出或觸控式螢幕信號輸出的連接端子及控制晶片等配置於畫面的背側。
[Problems to be Solved by the Invention]
In a general flexible display device, in order to minimize a frame corresponding to a part of a non-display area, a form may be adopted in which a bending area is buckled with a very small curvature, and is used for drawing. Connection terminals such as image output or touch screen signal output and control chip are arranged on the back side of the screen.

然而,若在彎曲區域具有大幅彎曲的形態的狀態下,將連接端子或控制晶片等配置於畫面的背側,則對位於屈曲區域的外側的配線的保護層施加大的拉伸應力而使其伸長。其結果,有可能在所述保護層的膜面產生破裂或剝離,伴隨於此而引起配線的斷線。However, if a connection terminal, a control chip, or the like is disposed on the back side of the screen in a state where the bending region has a large bending shape, a large tensile stress is applied to the protective layer of the wiring located outside the bending region to cause elongation. As a result, cracks or peeling may occur on the film surface of the protective layer, which may cause disconnection of the wiring.

另外,在屈曲區域,為了防止配線的斷線,有時採用鋸齒狀或8字狀等斷線防止結構。但是,在採用此種構成的情況下,也有可能在保護層自身產生破裂或剝離時,在所述部位變形集中而導致斷線。In addition, in the buckling area, in order to prevent disconnection of the wiring, a disconnection prevention structure such as a zigzag shape or a figure-eight shape may be used. However, in the case of adopting such a configuration, when the protective layer itself is cracked or peeled off, there is a possibility that the deformation may be concentrated at the above-mentioned portion and the wire may be disconnected.

進而,近年來,因顯示裝置或觸控式螢幕的高精細化而要求窄間距下的配線形成。Furthermore, in recent years, high-definition display devices or touch screens have been required to form wirings at narrow pitches.

本發明鑒於所述問題而目的在於提供一種彎曲特性優異且能夠進行窄間距下的配線形成的配線構件。
[解決問題的技術手段]
The present invention has been made in view of the problems described above, and an object thereof is to provide a wiring member having excellent bending characteristics and capable of forming wirings at a narrow pitch.
[Technical means to solve the problem]

本發明的配線構件包括基板及配置於所述基板的上層的硬化膜,且所述配線構件的特徵在於:
在使所述配線構件的與所述硬化膜相反的一側的所述基板面沿外徑0.5 mm的芯棒(mandrel)屈曲180°時,不產生所述硬化膜的破裂或剝離。
The wiring member of the present invention includes a substrate and a cured film disposed on an upper layer of the substrate, and the wiring member is characterized by:
When the substrate surface of the wiring member on the side opposite to the cured film was bent 180 ° along a mandrel with an outer diameter of 0.5 mm, the cured film did not crack or peel.

所述配線構件在基板上包括硬化膜。所述硬化膜可作為形成於基板上的配線層的保護層發揮功能。所述硬化膜具有可通過光刻法來形成圖案的特性,因此可實現高解析度下的圖案化性能。The wiring member includes a cured film on a substrate. The cured film can function as a protective layer of a wiring layer formed on a substrate. The cured film has a characteristic that a pattern can be formed by a photolithography method, and therefore, patterning performance at a high resolution can be achieved.

另外,所述硬化膜在沿外徑0.5 mm的芯棒屈曲180°時,不產生破裂或剝離。由於具有此種特徵,因此彎曲特性優異。In addition, the hardened film did not crack or peel when it buckled 180 ° along a mandrel with an outer diameter of 0.5 mm. Since it has such characteristics, it has excellent bending characteristics.

因此,根據包括此種硬化膜的配線構件,例如,即便在最厚的位置的膜厚為0.3 μm~20 μm的薄膜的屈曲部形成窄間距的配線層的情況下,也不易導致配線的斷線。Therefore, according to a wiring member including such a cured film, for example, even when a wiring layer having a narrow pitch is formed in a buckling portion of a thin film having a thickness of 0.3 μm to 20 μm at the thickest position, it is difficult to cause disconnection of the wiring. line.

另外,作為優選的形態,將所述硬化膜換算為膜厚10 μm時的下述式所表示的斷裂伸長率為10%以上。

斷裂伸長率(%)={(L1 -L0 )/L0 }×(10/T)×100

(式中,T為所述硬化膜的厚度[μm],L0 為試驗片的初始長度,L1 為斷裂時的試驗片的長度)
In addition, as a preferred embodiment, the elongation at break represented by the following formula when the cured film is converted to a film thickness of 10 μm is 10% or more.

Elongation at break (%) = {(L 1 -L 0 ) / L 0 } × (10 / T) × 100

(In the formula, T is the thickness [μm] of the cured film, L 0 is the initial length of the test piece, and L 1 is the length of the test piece when it is broken.)

硬化膜因具有所述特徵而具有高的伸長特性,因此可進一步提高屈曲部中的斷線防止的效果。另外,即便在自外部對搭載有所述配線構件的電子裝置施加物理性衝擊的情況下,也發揮抑制破裂或剝離的顯現的功能。Since the cured film has the above-mentioned characteristics and has high elongation characteristics, the effect of preventing disconnection in the buckled portion can be further enhanced. In addition, even when a physical impact is applied to the electronic device on which the wiring member is mounted from the outside, it functions to suppress the appearance of cracks or peeling.

作為具體的一形態,可採用在所述配線構件的一部分具有屈曲部的構成。此外,屈曲部可設置於配線構件的一部位,也可設置於多個部位。As a specific aspect, a configuration having a buckled portion in a part of the wiring member may be adopted. In addition, the buckling portion may be provided at one portion of the wiring member, or may be provided at a plurality of portions.

在具體的一形態中,所述配線構件可用作具有主動區域及在與所述基板面平行的方向上鄰接於所述主動區域的非主動區域的顯示器基板或觸控式螢幕基板。In a specific aspect, the wiring member can be used as a display substrate or a touch screen substrate having an active area and a non-active area adjacent to the active area in a direction parallel to the substrate surface.

在所述情況下,所述非主動區域可設為自所述顯示器基板或所述觸控式螢幕基板的主面側朝向與所述主面相反的一側的背面側屈曲。根據此種構成,可將非主動區域設置於與主動區域不同的面上、具體而言為側面側或背面側,因此可提高平面上的主動區域的比例,且能夠縮小邊框寬度。此外,所述情況下的屈曲起點可設為非主動區域。此外,本發明不排除如下構成:所述配線構件自所述顯示器基板或所述觸控式螢幕基板的所述背面側向所述主面側屈曲。In this case, the inactive region may be configured to be bent from a main surface side of the display substrate or the touch screen substrate toward a back surface side opposite to the main surface. According to this configuration, the inactive area can be provided on a surface different from the active area, specifically, the side or the back side. Therefore, the proportion of the active area on the plane can be increased, and the frame width can be reduced. In addition, the starting point of buckling in this case may be set as an inactive region. In addition, the present invention does not exclude a configuration in which the wiring member is bent from the back surface side of the display substrate or the touch screen substrate to the main surface side.

所述非主動區域可以所述非主動區域的背面與所述主動區域的背面相向的方式屈曲180°。此處,所謂「相向」,包含相接的情況與相隔開的情況這兩者。即,可為非主動區域的背面的至少一部分與主動區域的背面的至少一部分接觸,也可為位於在與兩背面正交的方向上相隔開的位置。根據所述構成,可最大限度地提高平面上的主動區域的比例,從而可有助於實現極窄的邊框寬度的顯示裝置。另外,由於可實現180°的屈曲,因此雖搭載多個配線圖案,卻可實現厚度小的配線構件。The non-active area may be bent by 180 ° in a manner that the back surface of the non-active area faces the back surface of the active area. Here, the term "opposing" includes both a case of being in contact with and a case of being separated from each other. That is, at least a part of the back surface of the non-active area may be in contact with at least a part of the back surface of the active area, or it may be located at a position spaced in a direction orthogonal to both back surfaces. According to this configuration, the ratio of the active area on the plane can be maximized, and thus it can contribute to the realization of a display device with an extremely narrow frame width. In addition, since it is possible to achieve 180 ° buckling, it is possible to realize a wiring member with a small thickness even though a plurality of wiring patterns are mounted.

在具體的一形態中,位於所述非主動區域的所述硬化膜具有通過相對於感光膜的光刻法而形成的圖案。所述圖案可設為孔圖案及電路圖案中的至少一種。In a specific aspect, the cured film located in the inactive region has a pattern formed by a photolithography method with respect to a photosensitive film. The pattern may be at least one of a hole pattern and a circuit pattern.

此處,所謂所述孔圖案,是指用以通過向所述圖案內填充導電層來形成位於上層的配線層與位於下層的配線層的電性連接的圖案。另外,所謂所述電路圖案,是指用以在與基板面平行的方向上配置多個電極或配線的圖案。Here, the hole pattern refers to a pattern for forming an electrical connection between an upper wiring layer and a lower wiring layer by filling a conductive layer into the pattern. The circuit pattern is a pattern for arranging a plurality of electrodes or wirings in a direction parallel to the substrate surface.

在具體的一形態中,所述配線構件所具備的所述硬化膜為感光膜形成用組成物的塗膜,且
所述感光膜形成用組成物包含:
(A)具有鹼可溶性基的聚合體、
(B)感放射線性化合物、及
(C)溶劑。
In a specific aspect, the cured film included in the wiring member is a coating film of a composition for forming a photosensitive film, and the composition for forming a photosensitive film includes:
(A) a polymer having an alkali-soluble group,
(B) a radiation-sensitive compound, and (C) a solvent.

優選為:所述(A)聚合體具有含有與所述鹼可溶性基不同的交聯性官能基的結構單元(m1)。由此,硬化膜的耐熱性與絕緣性提高。The (A) polymer preferably has a structural unit (m1) containing a crosslinkable functional group different from the alkali-soluble group. This improves the heat resistance and insulation of the cured film.

優選為:所述感光膜形成用組成物還包含(D)交聯性化合物。由此,硬化膜的耐熱性與絕緣性提高。It is preferable that the composition for forming a photosensitive film further contains (D) a crosslinkable compound. This improves the heat resistance and insulation of the cured film.

作為一形態,所述(A)聚合體可包含源自(甲基)丙烯酸酯、丁二烯、異戊二烯及氯丁二烯中的至少一種的結構單元(m2)。由此,可實現高的伸長特性。此外,結構單元(m2)可設為非環狀結構單元。在本說明書中,所謂「非環狀結構單元」,是指不具有環狀結構的結構單元。In one aspect, the (A) polymer may include a structural unit (m2) derived from at least one of (meth) acrylate, butadiene, isoprene, and chloroprene. Thereby, high elongation characteristics can be achieved. The structural unit (m2) may be a non-cyclic structural unit. As used herein, the "non-cyclic structural unit" refers to a structural unit that does not have a cyclic structure.

優選為:包含所述結構單元(m2)的聚合體的含量為所述感光膜形成用組成物中的溶劑以外的成分的合計質量的10質量%以上、90質量%以下,更優選為25質量%以上、55質量%以下。通過所述構成,雖維持高的伸長特性,卻可示出對於配線的穩定的保持性。The content of the polymer including the structural unit (m2) is preferably 10% by mass or more and 90% by mass or less, and more preferably 25% by mass of the total mass of components other than the solvent in the photosensitive film forming composition. % To 55% by mass. With such a configuration, while maintaining high elongation characteristics, it is possible to show stable holding properties for wiring.

作為一形態,所述感光膜形成用組成物還包含(E)密接助劑及(F)表面活性劑中的至少一種。通過包含(E)密接助劑,對於基板的密接性提高,通過包含(F)表面活性劑,膜形成性提高。
[發明的效果]
In one aspect, the composition for forming a photosensitive film further contains at least one of (E) an adhesion promoter and (F) a surfactant. By including the (E) adhesion aid, the adhesion to the substrate is improved, and by including the (F) surfactant, the film formability is improved.
[Effect of the invention]

根據本發明,可實現彎曲特性優異且能夠進行窄間距下的配線形成的配線構件。According to the present invention, a wiring member having excellent bending characteristics and capable of forming wirings at a narrow pitch can be realized.

參照圖式對本發明的配線構件的實施方式進行說明。此外,以下的圖式均為示意性表示,實際的尺寸比與圖式上的尺寸比並非一致。另外,在各圖式間,存在尺寸比不同的情況。An embodiment of the wiring member of the present invention will be described with reference to the drawings. In addition, the following drawings are schematic representations, and the actual size ratio is not the same as the size ratio on the drawings. In addition, there may be cases where the size ratio is different between the drawings.

[第一實施方式]
(結構)
圖1示意性圖示作為本發明的配線構件的一實施方式的可撓性印刷基板的例子。可撓性印刷基板1包括可撓性基板2、形成於可撓性基板2的上層的導電層3、與導電層3電性連接的導電層4及絕緣性的硬化膜(10、10a)。
[First Embodiment]
(structure)
FIG. 1 schematically illustrates an example of a flexible printed board as one embodiment of a wiring member of the present invention. The flexible printed board 1 includes a flexible substrate 2, a conductive layer 3 formed on the flexible substrate 2, a conductive layer 4 electrically connected to the conductive layer 3, and an insulating cured film (10, 10 a).

可撓性基板2例如包含聚醯亞胺、聚醯胺、聚酯、聚碸等樹脂。The flexible substrate 2 contains, for example, resins such as polyimide, polyimide, polyester, and polyfluorene.

導電層3及導電層4只要為具有導電性的材料即可,例如包含鋁、鈦、鉻、鎳、銅等金屬;或以其為主成分的合金;或者氧化銦、氧化銦錫(Indium Tin Oxide,ITO)、包含鎢的銦氧化物等金屬氧化物。The conductive layer 3 and the conductive layer 4 only need to be conductive materials, such as metals including aluminum, titanium, chromium, nickel, and copper; or alloys containing them as the main component; or indium tin, indium tin oxide (Indium Tin) Oxide (ITO), metal oxides such as indium oxide containing tungsten.

硬化膜10包含後述材料,且為具有彎曲特性的絕緣性材料。硬化膜10a可包含與硬化膜10相同的材料,也可包含不同的材料。The cured film 10 is made of a material described later, and is an insulating material having bending characteristics. The cured film 10 a may include the same material as the cured film 10 or may include a different material.

如圖1所示,可撓性印刷基板1在彎曲部形成有導電層4。通過利用後述材料來構成硬化膜10,雖實現圖案化性能,卻可實現優異的彎曲特性。As shown in FIG. 1, a flexible printed circuit board 1 has a conductive layer 4 formed in a bent portion. By forming the cured film 10 using a material described later, it is possible to achieve excellent bending characteristics while achieving patterning performance.

(製造方法)
以下,參照圖2A~圖2E對可撓性印刷基板1的製造方法進行記載。
(Production method)
Hereinafter, a method of manufacturing the flexible printed circuit board 1 will be described with reference to FIGS. 2A to 2E.

如圖2A所示,在可撓性基板2的上表面的規定區域形成導電層3。導電層3可通過如下方式來形成:在成膜導電膜後,形成抗蝕劑遮罩,對所述導電膜進行蝕刻後,將抗蝕劑遮罩去除。As shown in FIG. 2A, a conductive layer 3 is formed in a predetermined region on the upper surface of the flexible substrate 2. The conductive layer 3 can be formed by forming a resist mask after forming a conductive film, and etching the conductive film to remove the resist mask.

如圖2B所示,以覆蓋導電層3的上表面的方式形成塗膜8。塗膜8包含硬化膜10的構成材料。As shown in FIG. 2B, the coating film 8 is formed so as to cover the upper surface of the conductive layer 3. The coating film 8 includes a constituent material of the cured film 10.

以膜厚成為例如0.1 μm~100 μm的方式將包含後述材料的感光膜形成用組成物塗布於導電層3及可撓性基板2的上表面。此時,就破裂或剝離的抑制或屈曲性的觀點而言,膜厚優選為厚度最大的部位為0.2 μm~50 μm的範圍,更優選為0.3 μm~20 μm。其後,使用烘箱或熱板,以例如溫度:50℃~140℃、時間:10秒~360秒進行乾燥而將溶劑去除。由此,在導電層3及可撓性基板2的上表面形成包含感光膜形成用組成物的塗膜8。A composition for forming a photosensitive film containing a material described later is applied to the upper surfaces of the conductive layer 3 and the flexible substrate 2 so that the film thickness becomes, for example, 0.1 μm to 100 μm. In this case, from the viewpoint of suppression of cracking or peeling, or flexibility, the film thickness is preferably in the range of 0.2 μm to 50 μm, and more preferably 0.3 μm to 20 μm. Thereafter, using an oven or a hot plate, the solvent is removed by drying at, for example, a temperature: 50 ° C to 140 ° C and a time: 10 seconds to 360 seconds. As a result, a coating film 8 containing a composition for forming a photosensitive film is formed on the upper surfaces of the conductive layer 3 and the flexible substrate 2.

如圖2C所示,將塗膜8的規定的區域9開口。具體而言,例如通過以下方法來進行。As shown in FIG. 2C, a predetermined area 9 of the coating film 8 is opened. Specifically, it is performed by the following method, for example.

介隔與成為開口區域的區域9的形狀對應的經圖案化的遮罩,使用例如接觸式對準曝光機(contact aligner)、步進機或掃描器對塗膜8進行曝光處理。作為曝光用光,可列舉紫外光、可見光等,例如可使用波長200 nm~500 nm的光(例如:i射線(365 nm))。光化射線的照射量因塗膜8的構成材料中的各成分的種類、調配比例、塗膜8的厚度等而不同,在使用i射線作為曝光用光的情況下,曝光量通常為100 mJ/cm2 ~1500 mJ/cm2The patterned mask corresponding to the shape of the area 9 that becomes the opening area is exposed to the coating film 8 using, for example, a contact aligner, a stepper, or a scanner. Examples of the exposure light include ultraviolet light and visible light. For example, light having a wavelength of 200 nm to 500 nm (for example, i-ray (365 nm)) can be used. The amount of actinic ray exposure varies depending on the type of each component in the constituent materials of the coating film 8, the blending ratio, the thickness of the coating film 8, and the like. When i-rays are used as the exposure light, the exposure is usually 100 mJ. / cm 2 to 1500 mJ / cm 2 .

所述曝光處理後,也可進行加熱處理(以下也稱為「曝光後烘烤(Post Exposure Bake,PEB)處理」)。PEB條件因感光性組成物的各成分的含量及膜厚等而不同,通常為在70℃~150℃、優選為80℃~120℃下進行1分鐘~60分鐘左右。After the exposure treatment, a heat treatment (hereinafter also referred to as a “Post Exposure Bake (PEB) treatment”) may be performed. The PEB conditions differ depending on the content of each component of the photosensitive composition, the film thickness, and the like, and are usually performed at 70 ° C to 150 ° C, preferably 80 ° C to 120 ° C, for about 1 minute to 60 minutes.

繼而,利用鹼性顯影液對塗膜8進行顯影,從而將曝光部(正型的情況)或非曝光部(負型的情況)溶解、去除。由此將區域9開口。Then, the coating film 8 is developed with an alkaline developer to dissolve and remove the exposed portion (in the case of a positive type) or the non-exposed portion (in the case of a negative type). The region 9 is thereby opened.

作為顯影方法,可列舉:噴淋顯影法、噴霧顯影法、浸漬顯影法、覆液顯影法等。顯影條件例如為在20℃~40℃下進行0.5分鐘~5分鐘左右。另外,作為鹼性顯影液,例如可列舉使氫氧化鈉、氫氧化鉀、氨水、四甲基氫氧化銨、膽鹼等鹼性化合物以成為1質量%~10質量%濃度的方式溶解於水中而成的鹼性水溶液。所述鹼性水溶液中,也可適量添加例如甲醇、乙醇等水溶性的有機溶劑及表面活性劑等。此外,利用鹼性顯影液對塗膜進行顯影後,也可利用水進行清洗並加以乾燥。Examples of the development method include a shower development method, a spray development method, an immersion development method, and a liquid-covered development method. The developing conditions are, for example, about 0.5 to 5 minutes at 20 ° C to 40 ° C. Examples of the alkaline developing solution include dissolving a basic compound such as sodium hydroxide, potassium hydroxide, ammonia, tetramethylammonium hydroxide, and choline in water at a concentration of 1% to 10% by mass. The resulting alkaline aqueous solution. An appropriate amount of a water-soluble organic solvent such as methanol, ethanol, and a surfactant may be added to the alkaline aqueous solution. In addition, after the coating film is developed with an alkaline developer, it may be washed with water and dried.

進而,利用鹼性顯影液對塗膜進行顯影後,也可進而進行曝光處理(後曝光處理)及加熱處理(中間烘烤處理)。通過所述處理,可進一步穩定地維持後述後烘烤處理後的硬化後的塗膜8的形狀。Furthermore, after developing a coating film with an alkaline developing solution, you may perform exposure processing (post-exposure processing) and heat processing (intermediate baking processing). By this process, the shape of the hardened coating film 8 after the post-baking process mentioned later can be maintained more stably.

顯影步驟後,為了使塗膜8顯現作為絕緣膜的特性,視需要通過加熱處理而使其硬化(後烘烤)。硬化條件並無特別限定,例如可列舉在100℃~250℃的溫度下加熱15分鐘~10小時左右。為了充分進行硬化、防止圖案形狀的變形,也可以兩階段進行加熱,例如可列舉:第一階段中,在50℃~100℃的溫度下加熱10分鐘~2小時左右;第二階段中,進而在超過100℃、250℃以下的溫度下加熱20分鐘~8小時左右。若為此種硬化條件,則可使用通常的烘箱及紅外線爐等作為加熱設備。通過所述加熱處理,塗膜8變成硬化膜10。After the development step, in order to make the coating film 8 exhibit the characteristics as an insulating film, it is hardened (post-baking) by heat treatment if necessary. The curing conditions are not particularly limited, and examples include heating at a temperature of 100 ° C to 250 ° C for about 15 minutes to about 10 hours. In order to fully harden and prevent deformation of the pattern shape, heating may be performed in two stages. For example, in the first stage, heating is performed at a temperature of 50 ° C to 100 ° C for about 10 minutes to 2 hours; in the second stage, further heating is performed. It is heated at a temperature exceeding 100 ° C and below 250 ° C for about 20 minutes to about 8 hours. If such hardening conditions are used, ordinary ovens, infrared ovens, and the like can be used as heating equipment. Through the heat treatment, the coating film 8 becomes a cured film 10.

此外,在塗膜8形成的開口區域9的傾斜面優選為如圖2C所示,具有隨著靠近可撓性基板2而與所述基板2的面平行的方向上的寬度擴大那樣的錐形狀。通過以此種形狀形成開口區域9,可提高減低包含導電層3及之後所形成的導電層4的配線層的斷線的效果。塗膜8的傾斜面相對於可撓性基板2的面的角度(錐角度)優選為10°以上、80°以下,更優選為20°以上、50°以下。In addition, as shown in FIG. 2C, the inclined surface of the opening region 9 formed in the coating film 8 preferably has a tapered shape having a width that increases in a direction parallel to the surface of the substrate 2 as it approaches the flexible substrate 2. . By forming the opening region 9 in such a shape, the effect of reducing the disconnection of the wiring layer including the conductive layer 3 and the conductive layer 4 formed later can be improved. The angle (taper angle) of the inclined surface of the coating film 8 with respect to the surface of the flexible substrate 2 is preferably 10 ° or more and 80 ° or less, and more preferably 20 ° or more and 50 ° or less.

作為形成此種錐形狀的方法,可以使用用於圖案化的曝光處理的遮罩設置於將光部分地透射到預定區域的遮罩圖案的區域的半曝光技術(half tone exposure technique)、根據硬化烘烤時的升溫控制的熔體流率控制技術等。為了在非主動部限定地形成具有低角度的錐形,更優選使用半曝光技術。As a method of forming such a cone shape, a half tone exposure technique in which a mask for patterned exposure processing is set in a mask pattern region that partially transmits light to a predetermined region can be used. Melt flow rate control technology for temperature rise control during baking, etc. In order to form a conical shape with a low angle on the inactive portion, a semi-exposure technique is more preferably used.

如圖2D所示,在包含開口9的規定部位形成導電層4。導電層4的構成材料及形成方法可設為與導電層3相同。通過所述步驟而將導電層4與配置於較導電層4更靠可撓性基板2側的導電層3電性連接。即,開口9作為將配線間(導電層3、導電層4間)電性連接的接觸孔發揮功能。如此,通過將兩層以上的導電層(3、4)相互連接而可進行配線的多層化所引起的低電阻及冗餘性的確保或多個配線間的電流路徑的切換等。As shown in FIG. 2D, a conductive layer 4 is formed at a predetermined portion including the opening 9. The constituent material and formation method of the conductive layer 4 may be the same as those of the conductive layer 3. Through the above steps, the conductive layer 4 is electrically connected to the conductive layer 3 disposed on the flexible substrate 2 side than the conductive layer 4. That is, the opening 9 functions as a contact hole for electrically connecting wiring rooms (between the conductive layers 3 and 4). In this way, by connecting two or more conductive layers (3, 4) to each other, it is possible to ensure low resistance and redundancy due to multilayering of wirings, or to switch current paths among a plurality of wirings.

如圖2E所示,以覆蓋導電層4的方式形成絕緣性的硬化膜10a。如上所述,所述硬化膜10a可利用與硬化膜10相同的材料來構成,也可利用其他絕緣性材料來構成。其中,在利用與硬化膜10不同的材料來實現硬化膜10a的情況下,優選為利用彎曲性能優異的材料來構成。另外,關於硬化膜10a,也可與硬化膜10(塗膜8)同樣地在相對於可撓性基板2的面具有傾斜的狀態(具有錐角的狀態)下形成。As shown in FIG. 2E, an insulating cured film 10 a is formed so as to cover the conductive layer 4. As described above, the cured film 10a may be configured using the same material as the cured film 10, or may be configured using other insulating materials. Among them, when the cured film 10 a is realized by using a material different from that of the cured film 10, it is preferable that the cured film 10 a be formed of a material having excellent bending performance. The cured film 10 a may be formed in a state inclined to the surface of the flexible substrate 2 (state having a taper angle) similarly to the cured film 10 (coating film 8).

其後,對可撓性基板2施加應力而使整體彎曲,更詳細而言,使可撓性基板2向與硬化膜(10、10a)相反的一側彎曲,由此可實現圖1所示的形態。此時,硬化膜10具有高的伸長性,並且彎曲性能優異,因此即便為如圖1所示那樣施加應力而使整體彎曲的情況,也不會產生破裂或剝離。因此,根據可撓性印刷基板1,在對於先前的可撓性印刷基板而言難以形成包含微細的接觸孔的配線圖案的彎曲區域的地方,也可如導電層(3、4)那樣實現包含微細的接觸孔9的配線圖案。Thereafter, stress is applied to the flexible substrate 2 to bend the whole, and more specifically, the flexible substrate 2 is bent toward the side opposite to the cured film (10, 10a), thereby realizing FIG. 1 Shape. At this time, since the cured film 10 has high elongation and excellent bending performance, even if the entirety is bent by applying a stress as shown in FIG. 1, cracking or peeling does not occur. Therefore, according to the flexible printed circuit board 1, it is also possible to realize the inclusion of a curved region including a wiring pattern including fine contact holes in the flexible printed circuit board as in the conductive layer (3, 4). The wiring pattern of the fine contact hole 9.

尤其,通過在相對於可撓性基板2的面具有傾斜的狀態下形成硬化膜(10、10a)的開口區域(圖2C中的開口區域9),可以分散屈曲時各層的開口區域端部及形成在上層上的層的變形和應力,因此可以抑制導電層(3、4)的破裂和剝離,而優選。In particular, by forming the opening regions (opening regions 9 in FIG. 2C) of the cured film (10, 10a) in a state inclined with respect to the surface of the flexible substrate 2, it is possible to disperse the end portions of the opening regions and Deformation and stress of the layer formed on the upper layer can suppress cracking and peeling of the conductive layer (3, 4), which is preferable.

(另一製造方法)
在所述中,以當在規定區域形成導電層3時,利用抗蝕劑遮罩者的形式進行了說明,但也可使用包含後述材料的感光膜形成用組成物,即,與硬化膜10(塗膜8)相同的材料來進行相同的處理。在所述情況下,通過不進行用以自塗膜8變成硬化膜10的曝光後的加熱而進行清洗步驟,從而可將作為遮罩所配置的塗膜8去除。
(Another manufacturing method)
In the above, the description has been given in the form of using a resist mask when the conductive layer 3 is formed in a predetermined area. However, a composition for forming a photosensitive film containing a material described later, that is, a composition with a cured film 10 may be used. (Coating film 8) The same material is used for the same treatment. In this case, the coating film 8 disposed as a mask can be removed by performing a cleaning step without performing heating after exposure for changing from the coating film 8 to the cured film 10.

[第二實施方式]
以下,以與第一實施方式不同的部位為中心進行說明。此外,關於與第一實施方式相同的構成要素,標注相同的符號。在以下的第三實施方式中,也相同。
[Second Embodiment]
The following description focuses on parts different from the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals. The same applies to the following third embodiment.

(結構)
圖3示意性圖示作為本發明的配線構件的一實施方式的有機EL元件(以下稱為「OLED」)的例子。OLED 1a包括可撓性基板2、形成於可撓性基板2的上層的導電層3、配線層21、顯示用電極22、配線圖案23、有機發光層24、絕緣性的硬化膜(10、10a、10b)、密封層25、偏光膜26及控制用晶片27。此外,圖3中,雖未圖示,但OLED 1a在配線層21與可撓性基板2之間包括圖元選擇用及圖元點燈用的電晶體元件(例如薄膜電晶體(Thin Film Transistor,TFT))。另外,圖3中,雖未圖示,但在有機發光層24的上層形成有顯示用電極。
(structure)
FIG. 3 schematically illustrates an example of an organic EL element (hereinafter referred to as “OLED”) as one embodiment of the wiring member of the present invention. The OLED 1a includes a flexible substrate 2, a conductive layer 3 formed on an upper layer of the flexible substrate 2, a wiring layer 21, a display electrode 22, a wiring pattern 23, an organic light emitting layer 24, and an insulating cured film (10, 10a). 10b), the sealing layer 25, the polarizing film 26, and the control wafer 27. In addition, although not shown in FIG. 3, the OLED 1 a includes, between the wiring layer 21 and the flexible substrate 2, a transistor element (such as a thin film transistor) for pixel selection and pixel lighting. , TFT)). In addition, although not shown in FIG. 3, a display electrode is formed on the upper layer of the organic light emitting layer 24.

如圖3所示,OLED 1a具有主動區域A1與非主動區域A2。主動區域A1與形成有有機發光層24的區域相對應。非主動區域A2為主動區域A1以外的區域,且為形成有控制用晶片27及配線圖案23的區域。As shown in FIG. 3, the OLED 1a has an active area A1 and a non-active area A2. The active region A1 corresponds to a region where the organic light emitting layer 24 is formed. The inactive area A2 is an area other than the active area A1 and is an area in which the control wafer 27 and the wiring pattern 23 are formed.

配線層21、顯示用電極22及配線圖案23可利用與第一實施方式中所述的導電層3及導電層4相同的材料來構成。The wiring layer 21, the display electrode 22, and the wiring pattern 23 can be made of the same material as the conductive layer 3 and the conductive layer 4 described in the first embodiment.

硬化膜10包含後述材料,且為具有彎曲特性的絕緣性材料。硬化膜10a及硬化膜10b可包含與硬化膜10相同的材料,也可包含不同的材料。The cured film 10 is made of a material described later, and is an insulating material having bending characteristics. The cured film 10 a and the cured film 10 b may include the same material as the cured film 10 or may include different materials.

有機發光層24為通過載流子的再結合來進行發光的部位,且構成為包含與R、G、B的任一色相對應的有機材料。作為能夠用作有機發光層24的材料,可例示聚對苯亞乙烯(Poly Phenylene Vinylene,PPV)及其衍生物、聚乙炔及其衍生物、聚芴及其衍生物、聚苯及其衍生物、聚對苯乙烯及其衍生物、聚3-己基噻吩及其衍生物等。另外,作為能夠用作有機發光層24的其他材料,可列舉:蒽、萘、芘、並四苯、蔻(coronene)、苝、酞並苝(phthaloperylene)、萘並苝(naphthaloperylene)、二苯基丁二稀、四苯基丁二稀、香豆素、噁二唑、雙苯並噁唑啉、雙苯乙烯、環戊二烯、喹啉金屬絡合物、三(8-羥基喹啉)鋁絡合物、三(4-甲基-8-喹啉)鋁絡合物、三(5-苯基-8-喹啉)鋁絡合物、胺基喹啉金屬絡合物、苯並喹啉金屬絡合物、三(對三聯苯-4-基)胺、吡喃、喹吖啶酮、紅熒烯或這些的衍生物、或1-芳基-2,5-二(2-噻吩基)吡咯衍生物、二苯乙稀基苯衍生物、苯乙稀基亞芳基衍生物、苯乙稀基胺衍生物、或者在分子的一部分中具有包含這些發光性化合物的基的化合物等。The organic light emitting layer 24 is a part that emits light by recombination of carriers, and is configured to include an organic material corresponding to any one of R, G, and B colors. Examples of the material that can be used as the organic light-emitting layer 24 include poly-phenylene vinylene (PPV) and its derivatives, polyacetylene and its derivatives, polyfluorene and its derivatives, and polybenzene and its derivatives. , Poly-p-styrene and its derivatives, poly 3-hexylthiophene and its derivatives, etc. Examples of other materials that can be used as the organic light-emitting layer 24 include anthracene, naphthalene, pyrene, tetracene, coronene, pyrene, phthaloperylene, naphthaloperylene, and dibenzene. Butadiene, tetraphenylbutane, coumarin, oxadiazole, bisbenzoxazoline, bisstyrene, cyclopentadiene, quinoline metal complex, tris (8-hydroxyquinoline) ) Aluminum complex, tris (4-methyl-8-quinoline) aluminum complex, tris (5-phenyl-8-quinoline) aluminum complex, aminoquinoline metal complex, benzene Benzoquinoline metal complex, tris (p-terphenyl-4-yl) amine, pyran, quinacridone, rubrene or derivatives of these, or 1-aryl-2,5-bis (2 -Thienyl) pyrrole derivatives, diphenylethenylbenzene derivatives, phenylethenylarylene derivatives, phenethylenylamine derivatives, or those having a group containing these luminescent compounds in a part of the molecule Compounds etc.

密封層25是出於將所排列的多個有機發光元件(包含有機發光層24的元件)密封來防止混入來自外部的氧或水分的目的而設置,由此,OLED 1a的壽命提高。作為密封層25的材料,若為有機物,則可利用UV硬化性的丙烯酸樹脂或環氧樹脂等,若為無機物,則可利用SiON或SiO、SiN等。The sealing layer 25 is provided for the purpose of sealing the arrayed organic light-emitting elements (elements including the organic light-emitting layer 24) to prevent oxygen or moisture from being mixed from the outside, thereby increasing the life of the OLED 1 a. As the material of the sealing layer 25, if it is an organic substance, UV-curable acrylic resin, epoxy resin, etc. can be used, and if it is an inorganic substance, SiON, SiO, SiN, etc. can be used.

偏光膜26可利用已存的偏光板。此外,也可不包括偏光膜26。As the polarizing film 26, an existing polarizing plate can be used. The polarizing film 26 may not be included.

(製造方法)
以下,參照圖4A~圖4G,針對OLED 1a的製造方法,對與第一實施方式不同的部位進行說明。此外,為了圖示方便,在圖4A~圖4G中,也與圖3同樣地省略構成圖元選擇用的電晶體元件的各層的圖示。
(Production method)
Hereinafter, with reference to FIGS. 4A to 4G, the manufacturing method of the OLED 1 a will be described with respect to parts different from the first embodiment. In addition, for the convenience of illustration, in FIGS. 4A to 4G, the illustration of each layer constituting the transistor element for element selection is omitted as in FIG. 3.

首先,在可撓性基板2的上表面的規定區域適宜形成圖元選擇用的電晶體元件後(未圖示),形成導電層3及配線層21。作為構成電晶體元件的層,可包含柵極電極、柵極絕緣膜、半導體層、源極電極、漏極電極、鈍化膜。First, a transistor element (not shown) for element selection is suitably formed in a predetermined region on the upper surface of the flexible substrate 2, and then the conductive layer 3 and the wiring layer 21 are formed. The layer constituting the transistor element may include a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, and a passivation film.

配線層21與OLED 1a的各圖元中所含的電晶體元件的源極電極電性連接。即,配線層21在形成主動極電極的區域的上方,經由設置於鈍化膜的開口而與源極電極電性連接。導電層3及配線層21的形成方法與第一實施方式的導電層3的形成方法相同。此外,在本實施方式中,形成有配線層21的區域與OLED 1a的主動區域A1(顯示區域)相對應,主動區域A1以外的區域與OLED 1a的非主動區域A2(非顯示區域)相對應。在非主動區域A2內形成有導電層3。The wiring layer 21 is electrically connected to a source electrode of a transistor element included in each picture element of the OLED 1a. That is, the wiring layer 21 is electrically connected to the source electrode through an opening provided in the passivation film above the region where the active electrode is formed. The method for forming the conductive layer 3 and the wiring layer 21 is the same as the method for forming the conductive layer 3 in the first embodiment. In addition, in this embodiment, the area where the wiring layer 21 is formed corresponds to the active area A1 (display area) of the OLED 1a, and the areas other than the active area A1 correspond to the non-active area A2 (non-display area) of the OLED 1a. . A conductive layer 3 is formed in the inactive area A2.

如圖4B所示,以覆蓋配線層21的上表面及導電層3的一部分上表面的方式塗布包含後述材料的感光膜形成用組成物而形成塗膜8。As shown in FIG. 4B, a photosensitive film-forming composition containing a material described later is applied so as to cover the upper surface of the wiring layer 21 and a part of the upper surface of the conductive layer 3 to form a coating film 8.

如圖4C所示,經過曝光處理而將塗膜8的規定部位開口後,在包含開口區域的規定部位形成顯示用電極22及配線圖案23。具體方法與參照第一實施方式的圖2C及圖2D而敘述者相同。As shown in FIG. 4C, after a predetermined portion of the coating film 8 is opened through an exposure process, the display electrode 22 and the wiring pattern 23 are formed at a predetermined portion including the opening region. The specific method is the same as that described with reference to FIGS. 2C and 2D of the first embodiment.

即,針對塗膜8,介隔遮罩而進行曝光處理。其後,視需要進行曝光後的加熱處理(PEB處理),然後利用鹼性顯影液進行顯影,從而將不需要的塗膜8去除。其後,對塗膜8進行加熱處理而使其硬化(後烘烤),從而變成硬化膜10。其後,在包含開口部的規定區域形成導電性材料膜。由此,顯示用電極22與配線層21電性連接,配線圖案23與導電層3電性連接。此外,出於提高後烘烤處理後的形狀穩定性的目的,也可與第一實施方式中所述者同樣地在曝光處理後且後烘烤處理執行前,進而執行曝光處理及加熱處理。That is, the coating film 8 is exposed through a mask. Thereafter, if necessary, a post-exposure heat treatment (PEB treatment) is performed, and then development is performed using an alkaline developer to remove the unnecessary coating film 8. Thereafter, the coating film 8 is heat-treated to harden (post-bake), and becomes the cured film 10. Thereafter, a conductive material film is formed in a predetermined region including the opening. Thereby, the display electrode 22 is electrically connected to the wiring layer 21, and the wiring pattern 23 is electrically connected to the conductive layer 3. In addition, for the purpose of improving the shape stability after the post-baking process, the exposure process and the heating process may be performed after the exposure process and before the post-baking process is performed, as described in the first embodiment.

如圖4D所示,形成將顯示用電極22的一部分上表面開口的絕緣性的硬化膜10b與以覆蓋配線圖案23的上層的方式形成的絕緣性的硬化膜10a。其後,如圖4E所示,在露出的顯示用電極22的上表面,通過對於每個圖元成為適當的發光色的材料膜來形成有機發光層24。As shown in FIG. 4D, an insulating hardened film 10 b having a part of the upper surface of the display electrode 22 opened and an insulating hardened film 10 a formed so as to cover the upper layer of the wiring pattern 23 are formed. Thereafter, as shown in FIG. 4E, an organic light emitting layer 24 is formed on the exposed upper surface of the display electrode 22 by a material film having an appropriate emission color for each picture element.

繼而,如圖4F所示,以覆蓋配置於主動區域A1內的顯示用電極22及硬化膜10b的整個面的方式形成包含絕緣性材料的密封層25。其後,視需要,如圖4G所示,在非主動區域A2內的導電層3的上層形成控制用晶片27。另外,視需要,在密封層25的上層貼附偏光膜26。Next, as shown in FIG. 4F, a sealing layer 25 made of an insulating material is formed so as to cover the entire surface of the display electrode 22 and the cured film 10 b arranged in the active region A1. Thereafter, as shown in FIG. 4G, a control wafer 27 is formed on the upper layer of the conductive layer 3 in the non-active region A2 as necessary. If necessary, a polarizing film 26 is attached to the upper layer of the sealing layer 25.

其後,與第一實施方式同樣地對可撓性基板2施加應力而使整體彎曲,更詳細而言,尤其使非主動區域A2內的可撓性基板2向與硬化膜(10、10a)相反的一側彎曲,由此可實現圖3所示的形態。此時,硬化膜10具有高的伸長性,並且彎曲性能優異,因此即便為如圖3所示那樣施加應力而使整體彎曲的情況,也不會產生破裂或剝離。因此,在對於先前的OLED而言難以形成配線層的彎曲區域,也可實現微細的電極圖案。因此,可在與非主動區域A2相對應的所述彎曲區域部分形成用以實現複雜的控制機構的微細的配線,因此可實現邊框寬度窄且多功能的OLED 1a。Thereafter, as in the first embodiment, stress is applied to the flexible substrate 2 to bend the whole, and more specifically, the flexible substrate 2 in the non-active area A2 is directed toward the cured film (10, 10a). The opposite side is bent, thereby realizing the form shown in FIG. 3. At this time, since the cured film 10 has high extensibility and excellent bending performance, even when the entirety is bent by applying stress as shown in FIG. 3, no cracking or peeling occurs. Therefore, it is also possible to realize a fine electrode pattern in a curved region where it is difficult to form a wiring layer for the conventional OLED. Therefore, fine wiring for realizing a complicated control mechanism can be formed in the curved area portion corresponding to the non-active area A2, so that the OLED 1a with a narrow frame width and a multifunctionality can be realized.

此外,通過利用相同的材料來構成所有硬化膜(10、10a、10b),視情況可將塗布構成硬化膜(10、10a、10b)的材料的步驟共通化,因此能夠減少步驟數。In addition, since all the hardened films (10, 10a, 10b) are made of the same material, the steps of applying the materials constituting the hardened film (10, 10a, 10b) can be shared as appropriate, so the number of steps can be reduced.

[第三實施方式]
以下,以與第一實施方式不同的部位為中心進行說明。圖5示意性圖示作為本發明的配線構件的一實施方式的觸控式螢幕的例子。觸控式螢幕1b包括可撓性基板2、形成於可撓性基板2的上層的導電層3、形成於可撓性基板2的上層的檢測電極31及配線電極32、絕緣性的硬化膜(10、10c)、將檢測電極31彼此連接的電橋用電極層33、與導電層3電性連接的配線圖案23及控制用晶片27。
[Third Embodiment]
The following description focuses on parts different from the first embodiment. FIG. 5 schematically illustrates an example of a touch screen as one embodiment of the wiring member of the present invention. The touch screen 1b includes a flexible substrate 2, a conductive layer 3 formed on the upper layer of the flexible substrate 2, a detection electrode 31 and a wiring electrode 32 formed on the upper layer of the flexible substrate 2, and an insulating hardened film ( 10, 10c), a bridge electrode layer 33 that connects the detection electrodes 31 to each other, a wiring pattern 23 that is electrically connected to the conductive layer 3, and a control wafer 27.

檢測電極31為對導電體靠近的情況進行檢測的電極,且經由配線電極32而將所述檢測信號輸送至外部電路。多個檢測電極31形成於可撓性基板2的主動區域的中央部而形成檢測區域。與多個檢測電極31連接的配線電極32匯集形成於檢測區域的外側。The detection electrode 31 is an electrode that detects when a conductive body approaches, and transmits the detection signal to an external circuit via the wiring electrode 32. A plurality of detection electrodes 31 are formed at the center of the active area of the flexible substrate 2 to form a detection area. The wiring electrodes 32 connected to the plurality of detection electrodes 31 are collectively formed outside the detection area.

圖5所示的觸控式螢幕1b與圖3所示的OLED 1a同樣地具有主動區域A1與非主動區域A2。主動區域A1與形成有檢測電極31的區域相對應。非主動區域A2為主動區域A1以外的區域,且為形成有控制用晶片27及配線圖案23的區域。The touch screen 1b shown in FIG. 5 has an active area A1 and a non-active area A2 similarly to the OLED 1a shown in FIG. 3. The active area A1 corresponds to an area where the detection electrode 31 is formed. The inactive area A2 is an area other than the active area A1 and is an area in which the control wafer 27 and the wiring pattern 23 are formed.

此外,與第二實施方式同樣地,可撓性基板2具有彎曲區域,在所述彎曲區域形成有控制用晶片27。例如,所述控制用晶片27可通過與配線電極32電性連接,並基於經由配線電極32而輸入的信號來輸出用以進行規定處理的信號。另外,也可將配線電極32自身配置於可撓性基板2的彎曲區域。In addition, as in the second embodiment, the flexible substrate 2 has a curved region, and a control wafer 27 is formed in the curved region. For example, the control wafer 27 may be electrically connected to the wiring electrode 32 and output a signal for performing a predetermined process based on a signal input through the wiring electrode 32. In addition, the wiring electrode 32 itself may be arranged in a curved region of the flexible substrate 2.

作為檢測電極31,可使用堆積氧化銦錫(ITO)、氧化錫、氧化鋅、導電性聚合物等而成的透明導電膜。另外,作為配線電極32,可利用透明電極膜或金屬膜。As the detection electrode 31, a transparent conductive film formed by depositing indium tin oxide (ITO), tin oxide, zinc oxide, a conductive polymer, or the like can be used. As the wiring electrode 32, a transparent electrode film or a metal film can be used.

檢測電極31在可撓性基板2的檢測區域內呈矩陣狀配置,所檢測的與座標相對應的信號經由配線電極32而輸出。即,主動區域A1與可撓性基板2的檢測區域相對應。此外,多個檢測電極31呈矩陣裝配置,因此為了特定導電體靠近的位置,例如設置有將同一行彼此的檢測電極31或同一列彼此的檢測電極31連接的電橋用電極層33。此外,電橋用電極層33也可以在傾斜方向上交叉的形態形成。電橋用電極層33可利用與檢測電極31相同的材料來構成。The detection electrodes 31 are arranged in a matrix in the detection area of the flexible substrate 2, and the detected signals corresponding to the coordinates are output through the wiring electrodes 32. That is, the active area A1 corresponds to the detection area of the flexible substrate 2. In addition, since the plurality of detection electrodes 31 are arranged in a matrix, in order to specify the positions where the conductors are close to each other, for example, a bridge electrode layer 33 that connects the detection electrodes 31 in the same row or the detection electrodes 31 in the same column is provided. In addition, the bridge electrode layer 33 may be formed so as to intersect in an oblique direction. The bridge electrode layer 33 can be made of the same material as the detection electrode 31.

如圖5所示,電橋用電極層33介隔在硬化膜10c內的規定區域開口的接觸孔而與規定的檢測電極31電性連接。因此,硬化膜10c優選為包含具有感光性的絕緣性材料。As shown in FIG. 5, the bridge electrode layer 33 is electrically connected to a predetermined detection electrode 31 through a contact hole opened in a predetermined area in the cured film 10 c. Therefore, the cured film 10c preferably contains a photosensitive insulating material.

若導電體接近檢測區域內的特定位置,則所述導電體所靠近的行的檢測電極31與列的檢測電極31之間的電容發生變化。所述電容變化的信號經由配線電極32而輸入至控制用晶片27。控制用晶片27特定電容發生變化的行及列,從而特定導電體所接近的位置。此外,檢測電極31與電橋用電極層33能夠相互替換作用。即,可改變位於上層的電橋用電極層33的圖案來用作檢測電極,將下層的檢測電極31的層設為電橋用電極的圖案。When the conductive body approaches a specific position in the detection area, the capacitance between the detection electrode 31 of the row and the detection electrode 31 of the column that the conductive body approaches is changed. The signal of the capacitance change is input to the control wafer 27 via the wiring electrode 32. The control wafer 27 specifies the row and column in which the capacitance is changed, and thereby specifies the position where the conductor approaches. In addition, the detection electrode 31 and the bridge electrode layer 33 can interact with each other. That is, the pattern of the bridge electrode layer 33 located on the upper layer can be used as a detection electrode, and the layer of the detection electrode 31 on the lower layer can be used as the pattern of the bridge electrode.

在本實施方式中,也在可撓性基板2的彎曲區域形成有配線圖案23,因此通過將所述配線圖案23與控制用晶片27電性連接,控制用晶片27不僅可進行所述位置檢測,也可輸入/輸出多個處理信號。另外,關於配線電極32,也可設置於可撓性基板2的彎曲區域,因此可充分確保觸控式螢幕的主動區域的面積。此外,觸控式螢幕的主動區域為能夠受理觸摸操作的區域。In this embodiment, the wiring pattern 23 is also formed in the curved region of the flexible substrate 2. Therefore, by electrically connecting the wiring pattern 23 and the control wafer 27, the control wafer 27 can perform not only the position detection. You can also input / output multiple processed signals. In addition, since the wiring electrode 32 may be provided in a curved region of the flexible substrate 2, the area of the active region of the touch screen can be sufficiently secured. In addition, the active area of the touch screen is an area that can accept touch operations.

此外,本實施方式的觸控式螢幕1b的製造方法與第一實施方式及第二實施方式相同,因此省略。The method of manufacturing the touch screen 1b according to this embodiment is the same as that of the first and second embodiments, and is therefore omitted.

[另一實施方式]
在所述第二實施方式中的OLED 1a、觸控式螢幕1b中,針對主動區域A1及非主動區域A2這兩者,對在可撓性基板2的上表面形成各層的情況進行說明。但是,關於構成主動區域A1的部分,也可使用玻璃基板等不具有軟性的基板。
[Another embodiment]
In the OLED 1a and the touch screen 1b in the second embodiment, the case where each layer is formed on the upper surface of the flexible substrate 2 is described for both the active area A1 and the non-active area A2. However, as the portion constituting the active region A1, a substrate having no flexibility such as a glass substrate may be used.

[材料]
以下對構成各實施方式中所述的硬化膜10(塗膜8)的材料(感光膜形成用組成物)進行說明。
[material]
The material (the composition for forming a photosensitive film) constituting the cured film 10 (coating film 8) described in each embodiment will be described below.

構成硬化膜10的組成物含有具有鹼可溶性基的聚合體(A)、感放射線性化合物(B)及溶劑(C),視需要含有交聯性化合物(D)、密接助劑(E)及表面活性劑(F)。The composition constituting the cured film 10 contains a polymer (A) having an alkali-soluble group, a radiation-sensitive compound (B), and a solvent (C), and optionally contains a crosslinkable compound (D), an adhesion promoter (E), and Surfactant (F).

〈具有鹼可溶性基的聚合體(A)〉
聚合體(A)具有鹼可溶性基。作為一例,聚合體(A)具有選自羧基、酚性羥基及磺酸基中的至少一種官能基。更具體而言,作為構成聚合體(A)的材料,例如可列舉:酚醛清漆樹脂、具有酚性羥基的鹼可溶性樹脂(其中,所述酚醛清漆樹脂除外)、不飽和羧酸、作為聚醯亞胺前體的聚醯胺酸及其部分醯亞胺化物、作為聚苯並噁唑前體的聚羥基醯胺等。
<Polymer (A) having alkali-soluble group>
The polymer (A) has an alkali-soluble group. As an example, the polymer (A) has at least one functional group selected from a carboxyl group, a phenolic hydroxyl group, and a sulfonic acid group. More specifically, examples of the material constituting the polymer (A) include a novolac resin, an alkali-soluble resin having a phenolic hydroxyl group (excluding the novolac resin), an unsaturated carboxylic acid, and a polyfluorene. Polyamidoacids of imine precursors and some of their fluorenimides, polyhydroxyamidoamines as polybenzoxazole precursors, and the like.

所述酚醛清漆樹脂例如可通過使酚類與醛類在酸催化劑的存在下縮合而獲得。作為酚類,例如可列舉:苯酚、鄰甲酚、間甲酚、對甲酚、鄰乙基苯酚、間乙基苯酚、對乙基苯酚、鄰丁基苯酚、間丁基苯酚、對丁基苯酚、2,3-二甲苯酚、2,4-二甲苯酚、2,5-二甲苯酚、2,6-二甲苯酚、3,4-二甲苯酚、3,5-二甲苯酚、2,3,5-三甲基苯酚、3,4,5-三甲基苯酚、鄰苯二酚、間苯二酚(resorcinol)、連苯三酚(pyrogallol)、α-萘酚、β-萘酚。作為醛類,例如可列舉:甲醛、多聚甲醛、乙醛、苯甲醛、水楊醛。The novolak resin can be obtained, for example, by condensing phenols and aldehydes in the presence of an acid catalyst. Examples of the phenols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, and p-butylphenol. Phenol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, catechol, resorcinol, pyrogallol, α-naphthol, β- Naphthol. Examples of the aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, benzaldehyde, and salicylaldehyde.

作為所述酚醛清漆樹脂的具體例,可列舉:苯酚/甲醛縮合酚醛清漆樹脂、甲酚/甲醛縮合酚醛清漆樹脂、甲酚/水楊醛縮合酚醛清漆樹脂、苯酚-萘酚/甲醛縮合酚醛清漆樹脂及酚醛清漆樹脂經丁二烯系聚合體等具有聚合性乙烯基的橡膠狀聚合物改質而成的樹脂。Specific examples of the novolac resin include phenol / formaldehyde condensation novolac resin, cresol / formaldehyde condensation novolac resin, cresol / salicylaldehyde condensation novolac resin, phenol-naphthol / formaldehyde condensation novolac Resin and novolac resin are modified by a rubber-like polymer having a polymerizable vinyl group such as a butadiene-based polymer.

聚合體(A)在包含具有酚性羥基的鹼可溶性樹脂的情況下,優選為具有下述式(a1)所表示的結構單元(以下稱為「結構單元(a1)」)。When the polymer (A) contains an alkali-soluble resin having a phenolic hydroxyl group, the polymer (A) preferably has a structural unit represented by the following formula (a1) (hereinafter referred to as "structural unit (a1)").

[化1]

[Chemical 1]

式(a1)中,多個R1 分別獨立地表示氫原子或羥基(酚性羥基)。其中,多個R1 中,至少一個為作為鹼可溶性基的羥基(酚性羥基)。特優選為:p位的R1 為羥基,其他R1 為氫原子。R2 表示氫原子或碳數1~4的烷基,優選為氫原子或甲基。In the formula (a1), a plurality of R 1 each independently represent a hydrogen atom or a hydroxyl group (phenolic hydroxyl group). Among them, at least one of the plurality of R 1 is a hydroxyl group (phenolic hydroxyl group) as an alkali-soluble group. Particularly preferably, R 1 at the p-position is a hydroxyl group, and other R 1 is a hydrogen atom. R 2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and is preferably a hydrogen atom or a methyl group.

作為所述具有酚性羥基的鹼可溶性樹脂的例子,可列舉:對羥基苯乙烯、間羥基苯乙烯、鄰羥基苯乙烯、對異丙烯基苯酚、間異丙烯基苯酚、鄰異丙烯基苯酚等具有酚性羥基的單量體的單獨或共聚物、苯酚-亞二甲苯基二醇縮合樹脂、甲酚-亞二甲苯基二醇縮合樹脂及苯酚-二環戊二烯縮合樹脂。Examples of the alkali-soluble resin having a phenolic hydroxyl group include p-hydroxystyrene, m-hydroxystyrene, o-hydroxystyrene, p-isopropenylphenol, m-isopropenylphenol, o-isopropenylphenol, and the like. A solitary or copolymer having a phenolic hydroxyl group, a phenol-xylylene glycol condensation resin, a cresol-xylylene glycol condensation resin, and a phenol-dicyclopentadiene condensation resin.

作為所述具有酚性羥基的鹼可溶性樹脂,可設為AB型嵌段聚合體或ABA型嵌段聚合體。作為所述嵌段聚合體,例如可列舉包括包含所述結構單元(a1)的聚合體嵌段與包含結構單元(m2)的聚合體嵌段的嵌段聚合體,所述結構單元(m2)源自選自(甲基)丙烯酸酯、1,3-丁二烯、異戊二烯及氯丁二烯中的至少一種單量體。作為所述嵌段聚合體,另一例可列舉包括包含所述結構單元(a1)的聚合體嵌段與包含源自CH2 =CH(OR)(式中,R為烷基、芳基、芳基烷基或烷氧基烷基,這些基中的一個以上的氫原子可被氟原子取代)的結構單元的聚合體嵌段的嵌段聚合體。The alkali-soluble resin having a phenolic hydroxyl group may be an AB-type block polymer or an ABA-type block polymer. Examples of the block polymer include a block polymer including a polymer block including the structural unit (a1) and a polymer block including the structural unit (m2), and the structural unit (m2) It is derived from at least one kind of monomer selected from (meth) acrylate, 1,3-butadiene, isoprene, and chloroprene. As the block polymer, another example includes a polymer block including the structural unit (a1) and a block derived from CH 2 = CH (OR) (wherein R is an alkyl group, an aryl group, or an aromatic group). Alkyl group or alkoxyalkyl group, a block polymer of a polymer block of structural units in which one or more hydrogen atoms may be substituted by fluorine atoms).

所述嵌段聚合體也可具主動自所述以外的單體的結構單元。作為這些單體,例如可列舉:不飽和羧酸或這些的酸酐類、所述不飽和羧酸的酯類、不飽和腈類、不飽和醯胺類、不飽和醯亞胺類、不飽和醇類、具有脂環式骨架的化合物、含氮乙烯基化合物。The block polymer may have a structural unit derived from a monomer other than the above. Examples of these monomers include unsaturated carboxylic acids or anhydrides thereof, esters of the unsaturated carboxylic acids, unsaturated nitriles, unsaturated amines, unsaturated amines, and unsaturated alcohols. Compounds, alicyclic skeleton compounds, nitrogen-containing vinyl compounds.

更具體而言,例如可列舉:
(甲基)丙烯酸、馬來酸、富馬酸、巴豆酸、中康酸、檸康酸、衣康酸、馬來酸酐、檸康酸酐等不飽和羧酸或這些的酸酐類;
所述不飽和羧酸的甲酯、乙酯、正丙酯、異丙酯、正丁酯、異丁酯、仲丁酯、叔丁酯、正戊酯、正己酯、環己酯、2-羥基乙酯、2-羥基丙酯、3-羥基丙酯、4-羥基丁酯、2,2-二甲基-3-羥基丙酯、苄酯、異冰片酯、三環癸酯、1-金剛烷酯等酯類;
(甲基)丙烯腈、馬來腈、富馬腈、中康腈、檸康腈、衣康腈等不飽和腈類;(甲基)丙烯醯胺、巴豆醯胺、馬來醯胺、富馬醯胺、中康醯胺、檸康醯胺、衣康醯胺等不飽和醯胺類;馬來醯亞胺、N-苯基馬來醯亞胺、N-環己基馬來醯亞胺等不飽和醯亞胺類;(甲基)烯丙醇等不飽和醇類;
雙環[2.2.1]庚-2-烯(降冰片烯)、四環[4.4.0.12,5 .17,10 ]十二-3-烯、環丁烯、環戊烯、環辛烯、二環戊二烯、三環[5.2.1.02,6 ]癸烯等具有脂環式骨架的化合物;
N-乙烯基苯胺、乙烯基吡啶類、Ν-乙烯基-ε-己內醯胺、Ν-乙烯基吡咯烷酮、N-乙烯基咪唑、N-乙烯基哢唑等含氮乙烯基化合物。
More specifically, for example:
(Meth) unsaturated carboxylic acids such as acrylic acid, maleic acid, fumaric acid, crotonic acid, mesaconic acid, citraconic acid, itaconic acid, maleic anhydride, citraconic anhydride, or these anhydrides;
Methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, t-butyl, n-pentyl, n-hexyl, cyclohexyl, 2- Hydroxyethyl ester, 2-hydroxypropyl ester, 3-hydroxypropyl ester, 4-hydroxybutyl ester, 2,2-dimethyl-3-hydroxypropyl ester, benzyl ester, isobornyl ester, tricyclodecyl ester, 1- Esters such as amantadine;
(Meth) acrylonitrile, maleonitrile, fumaric nitrile, Zhongcononitrile, citraconitrile, itaconitrile, and other unsaturated nitriles; (meth) acrylamid, crotylamine, maleimide, rich Unsaturated ammonium amines such as malamidine, mesalamine, citraconam, itacamide; maleimide, N-phenylmaleimide, N-cyclohexylmaleimide Unsaturated fluorene imines; (meth) allyl alcohols and other unsaturated alcohols;
Bicyclo [2.2.1] hept-2-ene (norbornene), tetracyclo [4.4.0.1 2,5 .1 7,10] twelve-3-ene, cyclobutene, cyclopentene, cyclooctene Compounds having an alicyclic skeleton, such as dicyclopentadiene, tricyclo [5.2.1.0 2,6 ] decene;
Nitrogen-containing vinyl compounds such as N-vinylaniline, vinylpyridines, N-vinyl-ε-caprolactam, N-vinylpyrrolidone, N-vinylimidazole, and N-vinyloxazole.

聚合體(A)還可具有含有與所述鹼可溶性基不同的交聯性官能基的結構單元(m1)。由此,硬化膜10的耐熱性與絕緣性提高。The polymer (A) may further have a structural unit (m1) containing a crosslinkable functional group different from the alkali-soluble group. This improves the heat resistance and insulation of the cured film 10.

所述結構單元(m1)例如包含下述式(a2)所表示的結構單元(以下稱為「結構單元(a2)」)所表示的材料。The structural unit (m1) includes, for example, a material represented by a structural unit (hereinafter referred to as a “structural unit (a2)”) represented by the following formula (a2).

[化2]

[Chemical 2]

式(a2)中,多個R3 分別獨立地表示具有陽離子聚合性基的基或氫原子。其中,多個R3 中,至少一個為具有陽離子聚合性基的基。特優選為:p位的R3 為具有陽離子聚合性基的基,其他R3 為氫原子。R4 表示氫原子或碳數1~4的烷基,優選為氫原子或甲基。In formula (a2), a plurality of R 3 each independently represent a group having a cationic polymerizable group or a hydrogen atom. Among them, at least one of the plurality of R 3 is a group having a cationic polymerizable group. Particularly preferably, R 3 at the p-position is a group having a cationic polymerizable group, and the other R 3 is a hydrogen atom. R 4 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and is preferably a hydrogen atom or a methyl group.

在本說明書中,作為陽離子聚合性基,例如可列舉:氧雜環丙基、氧雜環丁基、羥甲基、烷氧基羥甲基、二氧雜環戊烷基、三噁烷基、乙烯基醚基、苯乙烯基。這些中,就可形成伸長物性優異的硬化膜的方面而言,優選為具有環狀醚結構的基,這些中,優選為氧雜環丙基或氧雜環丁基,特優選為氧雜環丙基。In the present specification, examples of the cationically polymerizable group include an oxetanyl group, an oxetanyl group, a methylol group, an alkoxymethylol group, a dioxolane group, and a trioxanyl group. , Vinyl ether group, styryl group. Among these, a group having a cyclic ether structure is preferred in terms of forming a cured film having excellent elongation properties. Among these, an oxetanyl group or an oxetanyl group is preferred, and an oxetan group is particularly preferred. Propyl.

在本說明書中,作為具有陽離子聚合性基的基,例如可列舉陽離子聚合性基其本身、將烷基(優選為碳數1~10、更優選為碳數1~5的烷基)的氫原子(通常為一個以上,優選為一個氫原子)取代為陽離子聚合性基而成的基及下述式(A)~式(C)所表示的基。In the present specification, examples of the group having a cationically polymerizable group include hydrogen of an cationically polymerizable group itself, an alkyl group (preferably an alkyl group having 1 to 10 carbon atoms, and more preferably an alkyl group having 1 to 5 carbon atoms). A group in which an atom (usually one or more, preferably one hydrogen atom) is substituted with a cationically polymerizable group and a group represented by the following formulae (A) to (C).

[化3]

[Chemical 3]

式(A)~式(C)中,Y1 ~Y3 分別獨立地表示直接鍵、亞甲基或碳數2~10的亞烷基。Y4 ~Y6 分別獨立地表示直接鍵、亞甲基或碳數2~10的亞烷基。Y7 ~Y9 分別獨立地表示陽離子聚合性基,優選為氧雜環丙基或氧雜環丁基,特優選為氧雜環丙基。式(a2)中,特優選為:p位的R3 為式(A)~式(C)所表示的基,其他R3 為氫原子。In the formulae (A) to (C), Y 1 to Y 3 each independently represent a direct bond, a methylene group, or an alkylene group having 2 to 10 carbon atoms. Y 4 to Y 6 each independently represent a direct bond, a methylene group, or an alkylene group having 2 to 10 carbon atoms. Y 7 to Y 9 each independently represent a cationically polymerizable group, and are preferably an oxetanyl group or an oxetanyl group, and particularly preferably an oxetanyl group. In formula (a2), it is particularly preferred that R 3 at the p position is a group represented by formulas (A) to (C), and the other R 3 is a hydrogen atom.

此外,在聚合體(A)具有含有交聯性官能基的結構單元(m1)的情況下,聚合體(A)可包括包含具有鹼可溶性基的結構單元與具有交聯性官能基的結構單元(m1)的聚合物鏈,也可為包含具有鹼可溶性基的結構單元的聚合物鏈與包含具有交聯性官能基的結構單元(m1)的聚合物鏈混合而成。When the polymer (A) has a structural unit (m1) containing a crosslinkable functional group, the polymer (A) may include a structural unit having an alkali-soluble group and a structural unit having a crosslinkable functional group. The polymer chain (m1) may be a polymer chain including a structural unit having an alkali-soluble group and a polymer chain including a structural unit (m1) having a crosslinkable functional group.

進而,聚合體(A)除所述具有鹼可溶性基的結構單元(例如結構單元(a1)、結構單元(m2))、具有交聯性官能基的結構單元(m1)以外,還可具有下述式(a3)所表示的結構單元(以下也稱為「結構單元(a3)」),也可包含含有結構單元(a3)的與聚合體(A)不同的聚合體。通過包含含有結構單元(a3)的與聚合體(A)不同的聚合體,而存在硬化膜的屈曲性或斷裂強度提高的情況。Furthermore, the polymer (A) may have the following structural units (for example, a structural unit (a1), a structural unit (m2)) having a base-soluble group, and a structural unit (m1) having a crosslinkable functional group. The structural unit (hereinafter also referred to as "structural unit (a3)") represented by the formula (a3) may include a polymer different from the polymer (A) containing the structural unit (a3). When a polymer different from the polymer (A) containing the structural unit (a3) is contained, the cured film may have increased flexibility or fracture strength.

[化4]

[Chemical 4]

式(a3)中,多個R5 分別獨立地表示氫原子、碳數1~4的烷基或碳數1~4的烷氧基。R6 表示氫原子或碳數1~4的烷基,優選為氫原子或甲基。通過具有此種結構單元(a3),可調整顯影步驟時的硬化膜的成形性。In formula (a3), a plurality of R 5 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms. R 6 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and is preferably a hydrogen atom or a methyl group. By having such a structural unit (a3), the moldability of the cured film at the time of a development process can be adjusted.

關於硬化膜10,通過使用含有聚合體(A)的組成物,硬化膜10的伸長特性提高。作為其理由,推測原因在於:(1)通過微相分離而形成海島結構,從而容易伸長的部分集聚;及/或(2)聚合物主鏈的纏繞增加。Regarding the cured film 10, by using a composition containing a polymer (A), the elongation characteristics of the cured film 10 are improved. As a reason therefor, it is presumed that: (1) a sea-island structure is formed by microphase separation, so that portions that are prone to elongation are gathered; and / or (2) the entanglement of the polymer main chain is increased.

關於硬化膜10,若使用含有聚合體(A)的組成物,則可形成除伸長物性優異以外,電絕緣性等諸特性也優異的硬化膜10。另外,關於硬化膜10,若使用含有聚合體(A)以及後述的感放射線性化合物(B)的感光性組成物,則可形成解析度及殘膜性等諸特性優異的硬化膜10。尤其,在聚合體(A)包含非環狀結構單元的情況下,由於非環狀結構單元與環狀結構單元相比,剛直性低且立體阻礙也少,因此可獲得高的柔軟性。因此,可提高構成硬化膜10的組成物的伸長物性。With respect to the cured film 10, if the composition containing the polymer (A) is used, in addition to excellent elongation properties, the cured film 10 can also be formed with excellent properties such as electrical insulation properties. When the photosensitive film containing the polymer (A) and the radiation-sensitive compound (B) described later is used for the cured film 10, the cured film 10 having excellent properties such as resolution and residual film properties can be formed. In particular, when the polymer (A) contains an acyclic structural unit, the acyclic structural unit has lower rigidity and less steric hindrance than the cyclic structural unit, so that high flexibility can be obtained. Therefore, the elongation physical properties of the composition constituting the cured film 10 can be improved.

在聚合體(A)中,包含鹼可溶性基的結構單元(例如結構單元(a1)、結構單元(m2))與視需要而含有的包含交聯性官能基的結構單元(m1)及/或結構單元(a3)的排列並無特別限定,聚合體(A)可為無規共聚物、嵌段共聚物的任意者。In the polymer (A), a structural unit (for example, a structural unit (a1), a structural unit (m2)) containing an alkali-soluble group, and a structural unit (m1) containing a crosslinkable functional group and / or as required The arrangement of the structural units (a3) is not particularly limited, and the polymer (A) may be any of a random copolymer and a block copolymer.

在聚合體(A)中,相對於所有結構單元100莫耳%,包含鹼可溶性基的結構單元(例如結構單元(a1)、結構單元(m2))及包含交聯性官能基的結構單元(m1)的合計含有比例優選為60莫耳%~95莫耳%,進而更優選為70莫耳%~90莫耳%。若這些的合計含有比例處於所述範圍內,則聚合體(A)成為以苯乙烯系骨架為主體的聚合體,而存在硬化膜10的耐熱性、電絕緣性等性能提高的傾向。聚合體(A)的結構單元的含量可通過1 H-核磁共振(Nuclear Magnetic Resonance,NMR)及13 C-NMR分析來測定。In the polymer (A), with respect to 100 mol% of all the structural units, the structural unit (for example, the structural unit (a1), the structural unit (m2)) containing an alkali-soluble group and the structural unit containing a crosslinkable functional group ( The total content ratio of m1) is preferably 60 mol% to 95 mol%, and more preferably 70 mol% to 90 mol%. When the total content ratio of these is within the above-mentioned range, the polymer (A) becomes a polymer mainly composed of a styrene-based skeleton, and there is a tendency that properties such as heat resistance and electrical insulation of the cured film 10 are improved. The content of the structural unit of the polymer (A) can be measured by 1 H-Nuclear Magnetic Resonance (NMR) and 13 C-NMR analysis.

關於聚合體(A)的通過凝膠滲透色譜(Gel Permeation Chromatography:GPC)法而測定的重量平均分子量(Mw),就硬化膜10的熱衝擊性及耐熱性以及組成物的解析性的觀點而言,以聚苯乙烯換算計,通常為4,000~100,000,優選為6,000~80,000,進而更優選為8,000~30,000。若Mw為所述下限值以上,則存在硬化膜10的耐熱性或伸長物性提高的傾向,若Mw為所述上限值以下,則存在聚合體(A)與其他成分的相容性提高,進而感光性組成物的圖案化特性提高的傾向。此外,Mw的測定方法的詳細情況將在實施例中敘述。Regarding the weight average molecular weight (Mw) of the polymer (A) measured by a gel permeation chromatography (GPC) method, from the viewpoint of the thermal shock resistance and heat resistance of the cured film 10 and the resolution of the composition, In other words, it is usually 4,000 to 100,000 in terms of polystyrene, preferably 6,000 to 80,000, and even more preferably 8,000 to 30,000. When Mw is above the lower limit, the heat resistance or elongation properties of the cured film 10 tend to be improved. When Mw is below the upper limit, the compatibility of the polymer (A) with other components is improved. Furthermore, the patterning characteristics of the photosensitive composition tend to be improved. The details of the Mw measurement method will be described in the examples.

此外,硬化膜10可包含所述材料且為多種具有鹼可溶性基的聚合體(A)混合而成。In addition, the cured film 10 may include the above-mentioned material and may be a mixture of a plurality of types of polymers (A) having an alkali-soluble group.

以下,對聚合體(A)的製造方法進行說明。在將包含鹼可溶性基的結構單元設為結構單元(a1)的情況下,作為可形成所述結構單元(a1)的單體,可列舉式(a1')所表示的單體(以下也稱為「單體(a1')」)等。另外,在將包含交聯性官能基的結構單元(m1)設為結構單元(a2)的情況下,作為可形成所述結構單元(a2)的單體,可列舉式(a2')所表示的單體(以下也稱為「單體(a2')」)等。另外,作為可形成結構單元(a3)的單體,可列舉式(a3')所表示的單體(以下也稱為「單體(a3')」)等。此外,在本說明書中,也將「源自單體的結構單元」簡稱為「單體單元」。Hereinafter, the manufacturing method of a polymer (A) is demonstrated. When the structural unit containing an alkali-soluble group is a structural unit (a1), as a monomer which can form the said structural unit (a1), the monomer represented by Formula (a1 ') (henceforth the following is also called) "Monomer (a1 ')"), etc. Moreover, when the structural unit (m1) containing a crosslinkable functional group is made into the structural unit (a2), as a monomer which can form the said structural unit (a2), the formula (a2 ') is mentioned. Monomer (hereinafter also referred to as "monomer (a2 ')") and the like. Moreover, as a monomer which can form a structural unit (a3), the monomer (henceforth a "monomer (a3 ')") etc. which are represented by Formula (a3') are mentioned. In addition, in this specification, "a structural unit derived from a monomer" is also abbreviated as "a monomer unit."

[化5]

[Chemical 5]

此外,式(a1')中,R1 及R2 分別與式(a1)中的R1 及R2 為相同含義,式(a2')中,R3 及R4 分別與式(a2)中的R3 及R4 為相同含義,式(a3')中,R5 及R6 分別與式(a3)中的R5 及R6 為相同含義。In addition, in formula (a1 '), R 1 and R 2 have the same meanings as R 1 and R 2 in formula (a1), and in formula (a2'), R 3 and R 4 have the same meaning as in formula (a2). the R 3 and R 4 are the same meanings of formula (a3 '), R 5 is and R is R 5 and R 6 respectively of formula (a3) 6 is the same meaning.

作為單體(a1'),例如可列舉對羥基苯乙烯、間羥基苯乙烯、鄰羥基苯乙烯、對異丙烯基苯酚、間異丙烯基苯酚、鄰異丙烯基苯酚等具有酚性羥基的芳香族乙烯基化合物,這些中,優選為對羥基苯乙烯、對異丙烯基苯酚。Examples of the monomer (a1 ') include aromatics having phenolic hydroxyl groups such as p-hydroxystyrene, m-hydroxystyrene, o-hydroxystyrene, p-isopropenylphenol, m-isopropenylphenol, and o-isopropenylphenol. Among these vinyl compounds, p-hydroxystyrene and p-isopropenylphenol are preferred.

也可使用單體(a1')的羥基被例如叔丁基、乙醯基保護的單體。源自羥基被保護的單體的結構單元通過如下方式而轉換為含有酚性羥基的結構單元:利用公知的方法(例如,在溶媒中且在鹽酸、硫酸等酸催化劑下,在溫度50℃~150℃下進行1小時~30小時反應)對所獲得的聚合體進行脫保護。單體(a1')可單獨使用一種,也可並用兩種以上。A monomer in which the hydroxyl group of the monomer (a1 ′) is protected by, for example, a tert-butyl group or an ethylfluorenyl group may also be used. A structural unit derived from a hydroxyl-protected monomer is converted into a structural unit containing a phenolic hydroxyl group by a known method (for example, in a solvent and under an acid catalyst such as hydrochloric acid or sulfuric acid, at a temperature of 50 ° C to The reaction is performed at 150 ° C for 1 hour to 30 hours.) The obtained polymer is deprotected. A monomer (a1 ') may be used individually by 1 type, and may use 2 or more types together.

作為單體(a2'),例如可列舉對乙烯基苄基縮水甘油醚、對乙烯基苄基氧雜環丁基醚。單體(a2')可單獨使用一種,也可並用兩種以上。Examples of the monomer (a2 ′) include p-vinylbenzyl glycidyl ether and p-vinylbenzyloxetane. A monomer (a2 ') may be used individually by 1 type, and may use 2 or more types together.

作為單體(a3'),可列舉:苯乙烯、α-甲基苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、鄰甲氧基苯乙烯、間甲氧基苯乙烯、對甲氧基苯乙烯等芳香族乙烯基化合物。單體(a3')可單獨使用一種,也可並用兩種以上。Examples of the monomer (a3 ') include styrene, α-methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, o-methoxystyrene, and m-methoxy Aromatic vinyl compounds such as styrene and p-methoxystyrene. A monomer (a3 ') may be used individually by 1 type, and may use 2 or more types together.

聚合體(A)例如為單體(a1')與單體(a2')及視需要的單體(a3')的共聚物,可僅包含結構單元(a1)與結構單元(a2)及視需要的結構單元(a3),也可包含非環狀結構單元。The polymer (A) is, for example, a copolymer of a monomer (a1 '), a monomer (a2'), and an optional monomer (a3 '), and may include only the structural unit (a1) and the structural unit (a2) and The required structural unit (a3) may include an acyclic structural unit.

獲得聚合體(A)時,例如只要使單體(a1')及/或保護了其羥基的化合物與單體(a2')及視需要的單體(a3')或其他單體在引發劑的存在下且在溶劑中進行聚合即可。聚合方法並無特別限定,為了獲得所述分子量的聚合體,優選為通過自由基聚合或陰離子聚合等來進行。When the polymer (A) is obtained, for example, as long as the monomer (a1 ') and / or the compound that has protected its hydroxyl group and the monomer (a2'), and optionally the monomer (a3 ') or other monomer are used in the initiator, Polymerization may be carried out in the presence of ions and in a solvent. The polymerization method is not particularly limited, and in order to obtain a polymer having the above-mentioned molecular weight, it is preferably carried out by radical polymerization, anionic polymerization, or the like.

〈感放射線性化合物(B)〉
構成硬化膜10的組成物中可含有用以賦予感放射線性(感光性)的感放射線性化合物(B)。所述情況下的感放射線性化合物可為正型或負型的任意者。感放射線性化合物(B)可根據正型的感放射線性化合物或負型的感放射線性化合物來適宜選擇。作為感放射線性化合物(B),在正型的情況下,可列舉具有醌二疊氮基的化合物(以下也稱為「醌二疊氮化合物(B1)」)等,在負型的情況下,可列舉光感應性酸產生劑(以下也稱為「酸產生劑(B2)」)等。
<Radiation-sensitive compound (B)>
The composition constituting the cured film 10 may contain a radiation-sensitive compound (B) to impart radiation sensitivity (photosensitivity). The radiation-sensitive compound in this case may be any of a positive type and a negative type. The radiation-sensitive compound (B) can be appropriately selected according to a positive radiation-sensitive compound or a negative radiation-sensitive compound. As the radiation-sensitive compound (B), in the case of a positive type, a compound having a quinonediazide group (hereinafter also referred to as "quinonediazide compound (B1)") and the like are used. Examples include photo-sensitive acid generators (hereinafter also referred to as "acid generators (B2)").

《醌二疊氮化合物(B1)》
醌二疊氮化合物(B1)為具有一個以上的酚性羥基的化合物與1,2-萘醌二疊氮-4-磺酸或1,2-萘醌二疊氮-5-磺酸的酯化合物。
"Quinone Diazide Compound (B1)"
Quinonediazide compound (B1) is an ester of a compound having one or more phenolic hydroxyl groups and 1,2-naphthoquinonediazide-4-sulfonic acid or 1,2-naphthoquinonediazide-5-sulfonic acid Compound.

由含有醌二疊氮化合物(B1)的感光性組成物所獲得的塗膜為相對於鹼性顯影液而言難溶的塗膜。醌二疊氮化合物(B1)為通過光照射而使醌二疊氮基分解並產生羧基的化合物,因此可通過利用如下特性來形成正型的圖案:通過光照射而使所述塗膜自鹼難溶的狀態變為鹼易溶的狀態。The coating film obtained from the photosensitive composition containing a quinonediazide compound (B1) is a coating film which is hardly soluble with respect to an alkaline developing solution. The quinonediazide compound (B1) is a compound that decomposes a quinonediazide group and generates a carboxyl group by light irradiation. Therefore, a positive pattern can be formed by using the following characteristics: the coating film is made alkaline by light irradiation The insoluble state is changed to an alkali-soluble state.

作為具有一個以上的酚性羥基的化合物,例如可列舉下述式(B1-1)~式(B1-5)所表示的化合物。這些化合物可單獨使用一種,也可並用兩種以上。Examples of the compound having one or more phenolic hydroxyl groups include compounds represented by the following formulae (B1-1) to (B1-5). These compounds may be used individually by 1 type, and may use 2 or more types together.

[化6]

[Chemical 6]

式(B1-1)中,X1 ~X10 分別獨立地為氫原子、碳數1~4的烷基、碳數1~4的烷氧基或羥基。X1 ~X5 的至少一個為羥基。A為直接鍵、-O-、-S-、-CH2 -、-C(CH3 )2 -、-C(CF3 )2 -、羰基(-C(=O)-)或磺醯基(-S(=O)2 -)。In the formula (B1-1), X 1 to X 10 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group. At least one of X 1 to X 5 is a hydroxyl group. A is a direct bond, -O-, -S-, -CH 2- , -C (CH 3 ) 2- , -C (CF 3 ) 2- , carbonyl (-C (= O)-) or sulfonyl (-S (= O) 2- ).

[化7]

[Chemical 7]

式(B1-2)中,X11 ~X24 分別獨立地為氫原子、碳數1~4的烷基、碳數1~4的烷氧基或羥基。X11 ~X15 的至少一個為羥基。Y1 ~Y4 分別獨立地為氫原子或碳數1~4的烷基。In the formula (B1-2), X 11 to X 24 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group. At least one of X 11 to X 15 is a hydroxyl group. Y 1 to Y 4 are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

[化8]

[Chemical 8]

式(B1-3)中,X25 ~X39 分別獨立地為氫原子、碳數1~4的烷基、碳數1~4的烷氧基或羥基。X25 ~X29 的至少一個為羥基,X30 ~X34 的至少一個為羥基。Y5 為氫原子或碳數1~4的烷基。In the formula (B1-3), X 25 to X 39 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group. At least one of X 25 to X 29 is a hydroxyl group, and at least one of X 30 to X 34 is a hydroxyl group. Y 5 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

[化9]

[Chemical 9]

式(B1-4)中,X40 ~X58 分別獨立地為氫原子、碳數1~4的烷基、碳數1~4的烷氧基或羥基。X40 ~X44 的至少一個為羥基,X45 ~X49 的至少一個為羥基,X50 ~X54 的至少一個為羥基。Y6 ~Y8 分別獨立地為氫原子或碳數1~4的烷基。In the formula (B1-4), X 40 to X 58 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group. At least one of X 40 to X 44 is a hydroxyl group, at least one of X 45 to X 49 is a hydroxyl group, and at least one of X 50 to X 54 is a hydroxyl group. Y 6 to Y 8 are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

[化10]

[Chemical 10]

式(B1-5)中,X59 ~X72 分別獨立地為氫原子、碳數1~4的烷基、碳數1~4的烷氧基或羥基。X59 ~X62 的至少一個為羥基,X63 ~X67 的至少一個為羥基。In the formula (B1-5), X 59 to X 72 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group. At least one of X 59 to X 62 is a hydroxyl group, and at least one of X 63 to X 67 is a hydroxyl group.

作為醌二疊氮化合物(B1),例如可列舉:4,4'-二羥基二苯基甲烷、4,4'-二羥基二苯基醚、2,3,4-三羥基二苯甲酮、2,3,4,4'-四羥基二苯甲酮、2,3,4,2',4'-五羥基二苯甲酮、三(4-羥基苯基)甲烷、三(4-羥基苯基)乙烷、1,1-雙(4-羥基苯基)-1-苯基乙烷、1,3-雙[1-(4-羥基苯基)-1-甲基乙基]苯、1,4-雙[1-(4-羥基苯基)-1-甲基乙基]苯、4,6-雙[1-(4-羥基苯基)-1-甲基乙基]-1,3-二羥基苯、1,1-雙(4-羥基苯基)-1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]乙烷等與1,2-萘醌二疊氮-4-磺酸或1,2-萘醌二疊氮-5-磺酸的酯化合物。Examples of the quinonediazide compound (B1) include 4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl ether, and 2,3,4-trihydroxybenzophenone. , 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4,2 ', 4'-pentahydroxybenzophenone, tris (4-hydroxyphenyl) methane, tris (4- Hydroxyphenyl) ethane, 1,1-bis (4-hydroxyphenyl) -1-phenylethane, 1,3-bis [1- (4-hydroxyphenyl) -1-methylethyl] Benzene, 1,4-bis [1- (4-hydroxyphenyl) -1-methylethyl] benzene, 4,6-bis [1- (4-hydroxyphenyl) -1-methylethyl] -1,3-dihydroxybenzene, 1,1-bis (4-hydroxyphenyl) -1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethane Ester compounds with 1,2-naphthoquinonediazide-4-sulfonic acid or 1,2-naphthoquinonediazide-5-sulfonic acid.

醌二疊氮化合物(B1)可單獨使用一種,也可並用兩種以上。在使用醌二疊氮化合物(B1)作為感放射線性化合物(B)的情況下,相對於聚合體(A)100質量份,醌二疊氮化合物(B1)的含量通常為5質量份~50質量份,優選為10質量份~30質量份,進而更優選為15質量份~30質量份。若醌二疊氮化合物(B1)的含量為所述下限值以上,則未曝光部的殘膜率提高,容易獲得忠實於遮罩圖案的像。若醌二疊氮化合物(B1)的含量為所述上限值以下,則容易獲得圖案形狀優異的硬化膜,也可防止硬化時的發泡。The quinonediazide compound (B1) may be used singly or in combination of two or more kinds. When the quinonediazide compound (B1) is used as the radiation-sensitive compound (B), the content of the quinonediazide compound (B1) is usually 5 to 50 parts by mass based on 100 parts by mass of the polymer (A). The mass part is preferably 10 to 30 parts by mass, and more preferably 15 to 30 parts by mass. When the content of the quinonediazide compound (B1) is equal to or more than the lower limit value, the residual film rate of the unexposed portion is increased, and an image faithful to the mask pattern is easily obtained. When the content of the quinonediazide compound (B1) is at most the above-mentioned upper limit value, a cured film having an excellent pattern shape is easily obtained, and foaming at the time of curing can be prevented.

《酸產生劑(B2)》
酸產生劑(B2)為通過光照射而形成酸的化合物。通過所述酸作用於聚合體(A)的陽離子聚合性基等而形成交聯結構。可通過利用如下特性來形成負型的圖案:通過交聯結構的形成而使由含有酸產生劑(B2)的感放射線性化合物(B)所獲得的塗膜自鹼易溶的狀態變化為鹼難溶的狀態。
"Acid generator (B2)"
The acid generator (B2) is a compound that forms an acid by light irradiation. The acid acts on the cationically polymerizable group of the polymer (A) to form a crosslinked structure. A negative pattern can be formed by utilizing a characteristic that the coating film obtained from the radiation-sensitive compound (B) containing the acid generator (B2) is changed from an alkali-soluble state to an alkali by the formation of a crosslinked structure. Insoluble state.

作為酸產生劑(B2),例如可列舉:鎓鹽化合物、含有鹵素的化合物、碸化合物、磺酸化合物、磺醯亞胺化合物、重氮甲烷化合物。這些中,就可形成伸長物性優異的硬化膜的方面而言,優選為鎓鹽化合物。Examples of the acid generator (B2) include an onium salt compound, a halogen-containing compound, a sulfonium compound, a sulfonic acid compound, a sulfonylimine compound, and a diazomethane compound. Among these, an onium salt compound is preferred because a cured film having excellent elongation properties can be formed.

作為鎓鹽化合物,例如可列舉:錪鹽、鋶鹽、鏻鹽、重氮鎓鹽、吡啶鎓鹽。作為優選的鎓鹽的具體例,可列舉:二苯基錪三氟甲磺酸鹽、二苯基錪對甲苯磺酸鹽、二苯基錪六氟銻酸鹽、二苯基錪六氟磷酸鹽、二苯基錪四氟硼酸鹽、三苯基鋶三氟甲磺酸鹽、三苯基鋶對甲苯磺酸鹽、三苯基鋶六氟銻酸鹽、4-叔丁基苯基×二苯基鋶三氟甲磺酸鹽、4-叔丁基苯基×二苯基鋶對甲苯磺酸鹽、4,7-二-正丁氧基萘基四氫噻吩鎓三氟甲磺酸鹽、4-(苯硫基)苯基二苯基鋶三(五氟乙基)三氟磷酸鹽、4-(苯硫基)苯基二苯基鋶六氟磷酸鹽。Examples of onium salt compounds include sulfonium salts, sulfonium salts, sulfonium salts, diazonium salts, and pyridinium salts. Specific examples of preferred onium salts include diphenylsulfonium trifluoromethanesulfonate, diphenylsulfonium p-toluenesulfonate, diphenylsulfonium hexafluoroantimonate, and diphenylsulfonium hexafluorophosphoric acid. Salt, diphenylsulfonium tetrafluoroborate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium hexafluoroantimonate, 4-tert-butylphenyl × Diphenylsulfonium triflate, 4-tert-butylphenyl × diphenylsulfonium p-toluenesulfonate, 4,7-di-n-butoxynaphthyltetrahydrothienium trifluoromethanesulfonate Salt, 4- (phenylthio) phenyldiphenylphosphonium tris (pentafluoroethyl) trifluorophosphate, 4- (phenylthio) phenyldiphenylphosphonium hexafluorophosphate.

作為含有鹵素的化合物,例如可列舉含有鹵化烷基的烴化合物、含有鹵化烷基的雜環式化合物。作為優選的含有鹵素的化合物的具體例,可列舉:1,10-二溴-正癸烷、1,1-雙(4-氯苯基)-2,2,2-三氯乙烷、苯基-雙(三氯甲基)-均三嗪、4-甲氧基苯基-雙(三氯甲基)-均三嗪、苯乙烯基-雙(三氯甲基)-均三嗪、萘基-雙(三氯甲基)-均三嗪等均三嗪衍生物。Examples of the halogen-containing compound include a halogenated alkyl-containing hydrocarbon compound and a halogenated alkyl-containing heterocyclic compound. Specific examples of preferred halogen-containing compounds include 1,10-dibromo-n-decane, 1,1-bis (4-chlorophenyl) -2,2,2-trichloroethane, and benzene. -Bis (trichloromethyl) -mesytriazine, 4-methoxyphenyl-bis (trichloromethyl) -mesitytriazine, styryl-bis (trichloromethyl) -mesitytriazine, Mesazine derivatives such as naphthyl-bis (trichloromethyl) -mesatriazine.

作為碸化合物,例如可列舉:β-酮碸化合物、β-磺醯基碸化合物及這些化合物的α-重氮化合物。作為優選的碸化合物的具體例,可列舉:4-三苯甲醯甲基碸、均三甲苯基苯甲醯甲基碸、雙(苯甲醯甲基磺醯基)甲烷。Examples of the fluorene compound include β-ketofluorene compounds, β-sulfofluorene fluorene compounds, and α-diazo compounds of these compounds. Specific examples of the preferred sulfonium compound include 4-tribenzylhydrazone methylsulfonium, mesitylbenzylhydrazone methylsulfonium, and bis (benzylhydrazone methylsulfonyl) methane.

作為磺酸化合物,例如可列舉:烷基磺酸酯類、鹵化烷基磺酸酯類、芳基磺酸酯類、亞胺基磺酸酯類。作為優選的磺酸化合物的具體例,可列舉:安息香甲苯磺酸酯、連苯三酚三-三氟甲磺酸酯、鄰硝基苄基三氟甲磺酸酯、鄰硝基苄基對甲苯磺酸酯。Examples of the sulfonic acid compound include alkylsulfonic acid esters, halogenated alkylsulfonic acid esters, arylsulfonic acid esters, and iminosulfonic acid esters. Specific examples of preferred sulfonic acid compounds include benzoin tosylate, pyrogallol tri-trifluoromethanesulfonate, o-nitrobenzyl trifluoromethanesulfonate, and o-nitrobenzyl Tosylate.

作為磺醯亞胺化合物,例如可列舉:N-(三氟甲基磺醯氧基)丁二醯亞胺、N-(三氟甲基磺醯氧基)鄰苯二甲醯亞胺、N-(三氟甲基磺醯氧基)二苯基馬來醯亞胺、N-(三氟甲基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)萘基醯亞胺。Examples of the sulfonimine compound include N- (trifluoromethylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) phthalimide, N -(Trifluoromethylsulfonyloxy) diphenylmaleimide, N- (trifluoromethylsulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboxyl Fluorenimine, N- (trifluoromethylsulfonyloxy) naphthylfluorenimine.

作為重氮甲烷化合物,例如可列舉:雙(三氟甲基磺醯基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(苯基磺醯基)重氮甲烷。Examples of the diazomethane compound include bis (trifluoromethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, and bis (phenylsulfonyl) diazomethane.

酸產生劑(B2)可單獨使用一種,也可並用兩種以上。在使用酸產生劑(B2)作為感放射線性化合物(B)的情況下,相對於聚合體(A)100質量份,酸產生劑(B2)的含量通常為0.1質量份~10質量份,優選為0.3質量份~5質量份,進而更優選為0.5質量份~5質量份。若酸產生劑(B2)的含量為所述下限值以上,則曝光部的硬化變充分,耐熱性容易提高。若酸產生劑(B2)的含量超過所述上限值,則有相對於曝光光的透明性降低,且解析度降低的擔憂。The acid generator (B2) may be used singly or in combination of two or more kinds. When the acid generator (B2) is used as the radiation-sensitive compound (B), the content of the acid generator (B2) is usually 0.1 to 10 parts by mass based on 100 parts by mass of the polymer (A). It is 0.3 to 5 parts by mass, and more preferably 0.5 to 5 parts by mass. When content of an acid generator (B2) is more than the said lower limit, hardening of an exposure part will become sufficient and heat resistance will become easy to improve. When content of an acid generator (B2) exceeds the said upper limit, transparency with respect to exposure light may fall and resolution may fall.

〈溶劑(C)〉
構成硬化膜10的組成物含有溶劑(C)。通過使用溶劑(C),可提高操作性、可調節黏度或保存穩定性。
<Solvent (C)>
The composition constituting the cured film 10 contains a solvent (C). By using the solvent (C), operability, viscosity adjustment, and storage stability can be improved.

作為溶劑(C),例如可列舉:
甲醇、乙醇、乙二醇、二乙二醇、丙二醇等醇類;
四氫呋喃、二噁烷等環狀醚類;
乙二醇單甲醚、乙二醇單乙醚、乙二醇二甲醚、乙二醇二乙醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇乙基甲基醚、丙二醇單甲醚、丙二醇單乙醚等多元醇的烷基醚類;
乙二醇單乙醚乙酸酯、二乙二醇乙醚乙酸酯、丙二醇乙醚乙酸酯、丙二醇單甲醚乙酸酯等多元醇的烷基醚乙酸酯類;
甲苯、二甲苯等芳香族烴類;
丙酮、甲基乙基酮、甲基異丁基酮、環己酮、甲基戊基酮、4-羥基-4-甲基-2-戊酮、二丙酮醇等酮類;
乙酸乙酯、乙酸丁酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、乳酸乙酯等酯類等。這些中,優選為四氫呋喃、丙二醇單甲醚乙酸酯、二乙二醇乙基甲基醚、乳酸乙酯、甲基戊基酮、丙二醇單甲醚。
Examples of the solvent (C) include:
Alcohols such as methanol, ethanol, ethylene glycol, diethylene glycol, and propylene glycol;
Cyclic ethers such as tetrahydrofuran and dioxane;
Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol Alkyl ethers of polyhydric alcohols such as ethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether;
Alkyl ether acetates of polyhydric alcohols such as ethylene glycol monoethyl ether acetate, diethylene glycol ethyl ether acetate, propylene glycol ethyl ether acetate, and propylene glycol monomethyl ether acetate;
Aromatic hydrocarbons such as toluene and xylene;
Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methylpentyl ketone, 4-hydroxy-4-methyl-2-pentanone, diacetone alcohol;
Ethyl acetate, butyl acetate, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, 2-hydroxy-3-methylbutane Methyl ester, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, ethyl lactate, etc. Wait. Among these, tetrahydrofuran, propylene glycol monomethyl ether acetate, diethylene glycol ethyl methyl ether, ethyl lactate, methylpentyl ketone, and propylene glycol monomethyl ether are preferred.

溶劑(C)可單獨使用一種,也可並用兩種以上。在構成硬化膜10的組成物中,相對於組成物中的溶劑(C)以外的成分的合計100質量份,溶劑(C)的含量通常為40質量份~900質量份,優選為60質量份~400質量份。The solvent (C) may be used singly or in combination of two or more kinds. In the composition constituting the cured film 10, the content of the solvent (C) is usually 40 parts by mass to 900 parts by mass, and preferably 60 parts by mass with respect to 100 parts by mass of a total of components other than the solvent (C) in the composition. ~ 400 parts by mass.

〈交聯性化合物(D)〉
構成硬化膜10的組成物中,為了提高其硬化性,並提高斷裂強度,可還具有交聯性化合物(D)。交聯性化合物(D)作為與聚合體(A)反應的交聯成分(硬化成分)發揮作用。
<Crosslinkable compound (D)>
The composition constituting the cured film 10 may further include a crosslinkable compound (D) in order to improve the curability and increase the breaking strength. The crosslinkable compound (D) functions as a crosslinkable component (hardening component) that reacts with the polymer (A).

作為交聯性化合物(D),例如可列舉:具有兩個以上的經烷基醚化的胺基的化合物(以下也稱為「含有胺基的化合物」)、含有氧雜環丙烷環的化合物、含有氧雜環丁烷環的化合物、含有異氰酸酯基的化合物(包括經嵌段化者)、含有醛基的酚化合物、含有羥甲基的酚化合物。其中,相當於聚合體(A)的化合物自交聯性化合物(D)除外。另外,具有氧雜環丙基的矽烷偶合劑自含有氧雜環丙烷環的化合物除外,具有異氰酸酯基的矽烷偶合劑自含有異氰酸酯基的化合物除外。Examples of the crosslinkable compound (D) include compounds having two or more alkyl etherified amine groups (hereinafter also referred to as "amine group-containing compounds"), and compounds containing an oxeane ring. , A compound containing an oxetane ring, a compound containing an isocyanate group (including a blocker), a phenol compound containing an aldehyde group, and a phenol compound containing a methylol group. Among them, compounds corresponding to the polymer (A) are excluded from the self-crosslinkable compound (D). Moreover, the silane coupling agent which has an oxetanyl group is excluded from the compound containing an oxepan ring, and the silane coupling agent which has an isocyanate group is excluded from the compound which contains an isocyanate group.

作為經烷基醚化的胺基,例如可列舉下述式所表示的基。式中,R11 表示亞甲基或亞烷基,R12 表示烷基。Examples of the alkyl-etherified amine group include a group represented by the following formula. In the formula, R 11 represents a methylene group or an alkylene group, and R 12 represents an alkyl group.

[化11]

[Chemical 11]

作為含有胺基的化合物,例如可列舉(聚)羥甲基化三聚氰胺、(聚)羥甲基化甘脲、(聚)羥甲基化苯代三聚氰胺、(聚)羥甲基化脲等氮化合物中的活性羥甲基(CH2 OH基)的全部或一部分(至少兩個)經烷基醚化的化合物。此處,作為構成烷基醚的烷基,例如可列舉甲基、乙基、丁基,這些可相互相同,也可不同。另外,未經烷基醚化的羥甲基可在一分子內自縮合,也可在二分子間縮合,其結果,可形成寡聚物成分。具體而言,可使用六甲氧基甲基三聚氰胺、六丁氧基甲基三聚氰胺、四甲氧基甲基甘脲、四丁氧基甲基甘脲等。Examples of the amine group-containing compound include nitrogen such as (poly) methylolated melamine, (poly) methylolated glycoluril, (poly) methylolated benzomelamine, and (poly) methylolated urea. Compounds in which all or part (at least two) of the active methylol groups (CH 2 OH groups) in the compound are alkyl etherified. Here, examples of the alkyl group constituting the alkyl ether include a methyl group, an ethyl group, and a butyl group. These may be the same as or different from each other. In addition, the methylol group which is not alkyl etherified may be self-condensed in one molecule or may be condensed between two molecules. As a result, an oligomer component can be formed. Specifically, hexamethoxymethylmelamine, hexabutoxymethylmelamine, tetramethoxymethylglycol urea, tetrabutoxymethylglycol urea, and the like can be used.

作為含有氧雜環丙烷環的化合物,只要在分子內含有氧雜環丙烷環(也稱為氧雜環丙基)即可,並無特別限定,例如可列舉:苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚型環氧樹脂、三酚型環氧樹脂、四酚型環氧樹脂、苯酚-亞二甲苯基型環氧樹脂、萘酚-亞二甲苯基型環氧樹脂、苯酚-萘酚型環氧樹脂、苯酚-二環戊二烯型環氧樹脂、脂環式環氧樹脂、脂肪族環氧樹脂。The compound containing an oxetane ring is not particularly limited as long as it contains an oxetane ring (also referred to as an oxetanyl group) in the molecule, and examples thereof include phenol novolac epoxy resins, Cresol novolac epoxy resin, bisphenol epoxy resin, triphenol epoxy resin, tetraphenol epoxy resin, phenol-xylylene epoxy resin, naphthol-xylylene ring Oxygen resin, phenol-naphthol type epoxy resin, phenol-dicyclopentadiene type epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin.

作為含有氧雜環丙烷環的化合物的具體例,例如可列舉:間苯二酚二縮水甘油醚、季戊四醇縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、甘油聚縮水甘油醚、苯基縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚/聚乙二醇二縮水甘油醚、丙二醇二縮水甘油醚/聚丙二醇二縮水甘油醚、1,6-己二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚、三羥甲基丙烷三縮水甘油醚。Specific examples of the oxetane-containing compound include resorcinol diglycidyl ether, pentaerythritol glycidyl ether, trimethylolpropane polyglycidyl ether, glycerol polyglycidyl ether, and phenyl glycidyl. Glyceryl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether / polyethylene glycol diglycidyl ether, propylene glycol diglycidyl ether / polypropylene glycol diglycidyl ether, 1,6-hexanediol di Glycidyl ether, sorbitol polyglycidyl ether, trimethylolpropane triglycidyl ether.

作為含有氧雜環丁烷環的化合物,只要在分子內含有氧雜環丁烷環(也稱為氧雜環丁基)即可,並無特別限定,例如可列舉通式(d-1)~通式(d-3)所表示的化合物。The oxetane ring-containing compound is not particularly limited as long as it contains an oxetane ring (also referred to as an oxetanyl ring) in the molecule, and examples thereof include the general formula (d-1) ~ A compound represented by general formula (d-3).

[化12]

[Chemical 12]

式(d-1)~式(d-3)中,A表示直接鍵或亞甲基、亞乙基、亞丙基等亞烷基;R表示甲基、乙基、丙基等烷基;R1 表示亞甲基、亞乙基、亞丙基等亞烷基;R2 表示甲基、乙基、丙基、己基等烷基;苯基、二甲苯基等芳基;式In formulas (d-1) to (d-3), A represents a direct bond or an alkylene group such as methylene, ethylene, or propylene; R represents an alkyl group such as methyl, ethyl, or propyl; R 1 represents an alkylene group such as methylene, ethylene, or propylene; R 2 represents an alkyl group such as methyl, ethyl, propyl, or hexyl; aryl group such as phenyl or xylyl;

[化13]

[Chemical 13]

所表示的基(式中,R及R1 分別與式(d-1)~式(d-3)中的R及R1 為相同含義)、下述式(i)所表示的二甲基矽氧烷殘基;亞甲基、亞乙基、亞丙基等亞烷基;亞苯基;下述式(ii)~式(vi)所表示的基;i與R2 的價數相等,為1~4的整數。此外,下述式(i)~式(vi)中的「*」表示鍵結部位。A group (wherein R and R 1 have the same meanings as R and R 1 in formula (d-1) to formula (d-3), respectively), and a dimethyl group represented by the following formula (i) Siloxane residues; alkylene groups such as methylene, ethylene, and propylene; phenylene groups; groups represented by the following formulae (ii) to (vi); i and R 2 have the same valence Is an integer from 1 to 4. In addition, "*" in the following formulas (i) to (vi) represents a bonding site.

[化14]

[Chemical 14]

式(i)及式(ii)中,x及y分別獨立地為0~50的整數。式(iii)中,Z為直接鍵或者-O-、-CH2 -、-C(CH3 )2 -、-C(CF3 )2 -、-CO-或-SO2 -所表示的二價基。In Formula (i) and Formula (ii), x and y are each independently an integer of 0-50. In formula (iii), Z is a direct bond or two represented by -O-, -CH 2- , -C (CH 3 ) 2- , -C (CF 3 ) 2- , -CO- or -SO 2- Price base.

作為通式(d-1)~通式(d-3)所表示的化合物的具體例,例如可列舉:1,4-雙{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}苯(商品名「OXT-121」,東亞合成(股)製造)、3-乙基-3-{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}氧雜環丁烷(商品名「OXT-221」,東亞合成(股)製造)、4,4'-雙[(3-乙基-3-氧雜環丁基)甲氧基甲基]聯苯(宇部興產(股)製造,商品名「艾塔納科(ETERNACOLL)OXBP」)、雙[(3-乙基-3-氧雜環丁基甲氧基)甲基-苯基]醚、雙[(3-乙基-3-氧雜環丁基甲氧基)甲基-苯基]丙烷、雙[(3-乙基-3-氧雜環丁基甲氧基)甲基-苯基]碸、雙[(3-乙基-3-氧雜環丁基甲氧基)甲基-苯基]酮、雙[(3-乙基-3-氧雜環丁基甲氧基)甲基-苯基]六氟丙烷、三[(3-乙基-3-氧雜環丁基甲氧基)甲基]苯、四[(3-乙基-3-氧雜環丁基甲氧基)甲基]苯、下述式(d-a)~式(d-d)所表示的化合物。Specific examples of the compounds represented by the general formulae (d-1) to (d-3) include 1,4-bis {[(3-ethyloxetane-3-yl) Methoxy] methyl} benzene (trade name "OXT-121", manufactured by Toa Sangyo Co., Ltd.), 3-ethyl-3-{[((3-ethyloxetane-3-yl) methyl Oxy] methyl} oxetane (trade name "OXT-221", manufactured by Toa Kosei Co., Ltd.), 4,4'-bis [(3-ethyl-3-oxetanyl) methyl Oxymethyl] biphenyl (manufactured by Ube Kosan Co., Ltd., trade name "ETERNACOLL OXBP"), bis [(3-ethyl-3-oxetanylmethoxy) methyl- Phenyl] ether, bis [(3-ethyl-3-oxetanylmethoxy) methyl-phenyl] propane, bis [(3-ethyl-3-oxetanylmethoxy) methyl- Phenyl] fluorene, bis [(3-ethyl-3-oxetanylmethoxy) methyl-phenyl] one, bis [(3-ethyl-3-oxetanylmethoxy) methyl- Phenyl] hexafluoropropane, tris [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, tetra [(3-ethyl-3-oxetanylmethoxy) methyl] benzene A compound represented by the following formulae (da) to (dd).

[化15]

[Chemical 15]

另外,除這些化合物以外,也可使用高分子量的具有多價氧雜環丁烷環的化合物。例如可列舉氧雜環丁烷寡聚物(商品名「歐力多(Oligo)-OXT」,東亞合成(股)製造)、下述式(d-e)~式(d-g)所表示的化合物。In addition to these compounds, high molecular weight compounds having a polyvalent oxetane ring can also be used. For example, an oxetane oligomer (brand name "Oligo-OXT", manufactured by Toa Sangyo Co., Ltd.), and a compound represented by the following formula (d-e) to formula (d-g) are mentioned.

[化16]

[Chemical 16]

式(d-e)~式(d-g)中,p、q及s分別獨立地為0~10000的整數,優選為1~10的整數。式(d-f)中,Y為亞乙基、亞丙基等亞烷基或-CH2 -Ph-CH2 -所表示的基(式中,Ph表示亞苯基)。In the formulae (de) to (dg), p, q, and s are each independently an integer of 0 to 10,000, and preferably an integer of 1 to 10. In formula (df), Y is a group represented by an alkylene group such as ethylene or propylene, or -CH 2 -Ph-CH 2- (in the formula, Ph represents a phenylene group).

交聯性化合物(D)可單獨使用一種,也可並用兩種以上。相對於聚合體(A)100質量份,交聯性化合物(D)的含量通常為1質量份~60質量份,優選為5質量份~50質量份,進而更優選為5質量份~40質量份。若交聯性化合物(D)的含量處於所述範圍內,則硬化反應充分進行,在使用感光性組成物的情況下,所形成的硬化膜具有良好的圖案形狀,且伸長物性優異,耐熱性、電絕緣性優異。The crosslinkable compound (D) may be used singly or in combination of two or more kinds. The content of the crosslinkable compound (D) is usually 1 to 60 parts by mass, preferably 5 to 50 parts by mass, and more preferably 5 to 40 parts by mass based on 100 parts by mass of the polymer (A). Serving. When the content of the crosslinkable compound (D) is within the above range, the curing reaction proceeds sufficiently. When a photosensitive composition is used, the formed cured film has a good pattern shape, and has excellent elongation properties and heat resistance. Excellent electrical insulation.

〈密接助劑(E)〉
構成硬化膜10的組成物中,為了提高與下層的密接性,可還含有密接助劑(E)。作為密接助劑(E),優選為官能性矽烷偶合劑,例如可列舉具有羧基、甲基丙烯醯基、乙烯基、異氰酸酯基、氧雜環丙基等反應性取代基的矽烷偶合劑,具體而言,可列舉:三甲氧基矽烷基苯甲酸、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、乙烯基三甲氧基矽烷、γ-異氰酸基丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、1,3,5-N-三(三甲氧基矽烷基丙基)異氰脲酸酯。
<Adhesion aid (E)>
The composition constituting the cured film 10 may further include an adhesion promoter (E) in order to improve adhesion to the lower layer. The adhesion assistant (E) is preferably a functional silane coupling agent, and examples thereof include a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryl group, a vinyl group, an isocyanate group, or an oxetanyl group. Specifically, Specific examples include trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, and γ-isocyanate. Propyltriethoxysilane, γ-glycidyloxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 1,3,5-N-tris (Trimethoxysilylpropyl) isocyanurate.

在構成硬化膜10的組成物中,相對於聚合體(A)100質量份,密接助劑(E)的含量優選為0.5質量份~10質量份,更優選為0.5質量份~5質量份。若密接助劑(E)的含量為所述範圍內,則硬化膜10對於下層(例如基板1)的密接性進一步提高。The content of the composition constituting the cured film 10 is preferably 0.5 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass based on 100 parts by mass of the polymer (A). When the content of the adhesion assistant (E) is within the above range, the adhesion of the cured film 10 to the lower layer (for example, the substrate 1) is further improved.

〈表面活性劑(F)〉
構成硬化膜10的組成物中,為了提高膜形成性,可還含有表面活性劑(F)。作為表面活性劑(F),例如可利用氟系表面活性劑或矽酮系表面活性劑及其他表面活性劑。
<Surfactant (F)>
The composition constituting the cured film 10 may further contain a surfactant (F) in order to improve the film formability. Examples of the surfactant (F) include a fluorine-based surfactant, a silicone-based surfactant, and other surfactants.

〈其他添加劑〉
構成硬化膜10的組成物中,除所述以外,可在不損及本發明的目的及特性的範圍內含有流平劑、增感劑、無機填料、猝滅劑(quencher)等各種添加劑。
〈Other additives〉
The composition constituting the cured film 10 may include various additives such as a leveling agent, a sensitizer, an inorganic filler, and a quencher within a range that does not impair the object and characteristics of the present invention.

另外,構成硬化膜10的組成物中,為了提高絕緣性及熱衝擊性,可還含有交聯微粒子。作為交聯微粒子,例如可列舉具有羥基及/或羧基的單量體與具有兩個以上的聚合性不飽和基的交聯性單量體的共聚物的交聯微粒子。另外,也可使用進而共聚有其他單量體的共聚物的交聯微粒子。在構成硬化膜10的組成物中,相對於聚合體(A)100質量份,交聯微粒子的含量優選為0質量份~200質量份,更優選為0.1質量份~150質量份,進而更優選為0.5質量份~100質量份。In addition, the composition constituting the cured film 10 may further contain crosslinked fine particles in order to improve insulation and thermal shock resistance. Examples of the crosslinked fine particles include crosslinked fine particles of a copolymer of a monomer having a hydroxyl group and / or a carboxyl group and a crosslinkable monomer having two or more polymerizable unsaturated groups. In addition, crosslinked fine particles in which copolymers of other monomers are further copolymerized may also be used. The content of the composition constituting the cured film 10 is preferably 0 to 200 parts by mass, more preferably 0.1 to 150 parts by mass, and more preferably 100 parts by mass of the polymer (A). It is 0.5 to 100 parts by mass.

[製造方法]
構成硬化膜10的組成物可通過將各成分均勻混合而製備。另外,為了去除廢渣,也可在將各成分均勻混合後,利用篩檢程式等對所獲得的混合物進行過濾。各聚合體的製造方法如上所述。
[Production method]
The composition constituting the cured film 10 can be prepared by uniformly mixing the components. In addition, in order to remove waste residue, after the components are uniformly mixed, the obtained mixture may be filtered by a screening program or the like. The production method of each polymer is as described above.

關於硬化膜10,如上所述那樣進行如下步驟而形成:將構成硬化膜10的組成物塗布於支撐體(例如基板1)上而形成塗膜的步驟(塗布步驟);介隔所期望的遮罩圖案對所述塗膜進行曝光的步驟(曝光步驟);及利用鹼性顯影液對所述塗膜進行顯影,將曝光部(正型的情況)或非曝光部(負型的情況)溶解去除,由此在支撐體上形成所期望的圖案的步驟(顯影步驟)。
[實施例]
The cured film 10 is formed by performing the following steps as described above: a step of applying a composition constituting the cured film 10 to a support (for example, the substrate 1) to form a coating film (coating step); A step of exposing the coating film with a mask pattern (exposure step); and developing the coating film with an alkaline developer to dissolve an exposed portion (in the case of a positive type) or a non-exposed portion (in the case of a negative type) The step of removing (the developing step) by which a desired pattern is formed on the support.
[Example]

以下,通過實施例對本發明進一步進行詳細說明,但本發明並不受這些實施例任何限定。Hereinafter, the present invention will be described in detail through examples, but the present invention is not limited to these examples.

〈聚合體(A)其他聚合體的重量平均分子量(Mw)的測定方法〉
在下述條件下,通過凝膠滲透色譜(GPC)法來測定Mw。
管柱:將東曹(Tosoh)公司製造的管柱的TSK-M及TSK2500串列連接
溶媒:四氫呋喃(Tetrahydrofuran,THF)
溫度:40℃
檢測方法:折射率法
標準物質:聚苯乙烯
<Method for measuring weight average molecular weight (Mw) of polymer (A) and other polymers>
Mw was measured by gel permeation chromatography (GPC) under the following conditions.
Tubular column: TSK-M and TSK2500 serially connected to Tosoh's column. Solvent: Tetrahydrofuran (THF)
Temperature: 40 ° C
Detection method: refractive index standard material: polystyrene

〈聚合體(A)的結構單元的含量的測定方法〉
聚合體(A)的結構單元的含量通過1 H-NMR及13 C-NMR分析來測定。
<Method for measuring content of structural unit of polymer (A)>
The content of the structural unit of the polymer (A) was measured by 1 H-NMR and 13 C-NMR analysis.

〈1.聚合體(A)的合成〉<1. Synthesis of Polymer (A)>

[合成例1]聚合體(A-1)的合成
在燒瓶中準備使對羥基苯乙烯85質量份、對乙烯基苄基縮水甘油醚18質量份、苯乙烯21質量份及偶氮雙異丁腈4質量份溶解於丙二醇二甲醚150質量份中而成的混合液。在70℃下將所述混合液加熱10小時。將加熱後的混合液投入至包含甲苯及己烷的溶液中,利用己烷對所析出的沉澱物進行清洗,從而獲得對羥基苯乙烯/對乙烯基苄基縮水甘油醚/苯乙烯共聚物(以下也稱為「聚合體(A-1)」)。
[Synthesis Example 1] Synthesis of Polymer (A-1) In a flask, 85 parts by mass of p-hydroxystyrene, 18 parts by mass of p-vinylbenzyl glycidyl ether, 21 parts by mass of styrene, and azobisisobutyl were prepared. A mixed solution in which 4 parts by mass of nitrile was dissolved in 150 parts by mass of propylene glycol dimethyl ether. The mixture was heated at 70 ° C for 10 hours. The heated mixed solution was put into a solution containing toluene and hexane, and the precipitate was washed with hexane to obtain a p-hydroxystyrene / p-vinylbenzyl glycidyl ether / styrene copolymer ( Hereinafter, it is also referred to as "polymer (A-1)").

聚合體(A-1)的重量平均分子量(Mw)為8,800。另外,聚合體(A-1)為具有70莫耳%的對羥基苯乙烯單元、10莫耳%的對乙烯基苄基縮水甘油醚單元及20莫耳%的苯乙烯單元的聚合體。對乙烯基苄基縮水甘油醚由下述式表示。The weight average molecular weight (Mw) of the polymer (A-1) was 8,800. The polymer (A-1) is a polymer having 70 mol% p-hydroxystyrene units, 10 mol% p-vinylbenzyl glycidyl ether units, and 20 mol% styrene units. The p-vinylbenzyl glycidyl ether is represented by the following formula.

[化17]

[Chemical 17]

[合成例2]聚合體(A-2)的合成
使對叔丁氧基苯乙烯與苯乙烯以莫耳比80:20的比例計而合計100質量份溶解於丙二醇單甲醚150質量份中,在氮氣環境下將反應溫度保持為70℃,使用偶氮雙異丁腈4質量份而聚合10小時。其後,向反應溶液中添加硫酸,將反應溫度保持為90℃並反應10小時,將對叔丁氧基苯乙烯脫保護而轉換為羥基苯乙烯。向所獲得的共聚物中添加乙酸乙酯,反覆進行5次水洗,分取乙酸乙酯相,並將溶劑除去而獲得對羥基苯乙烯/苯乙烯共聚物(以下稱為「聚合體(A-2)」)。
[Synthesis Example 2] Synthesis of Polymer (A-2) A total of 100 parts by mass of p-tert-butoxystyrene and styrene was dissolved in 150 parts by mass of propylene glycol monomethyl ether in a molar ratio of 80:20. The reaction temperature was maintained at 70 ° C. under a nitrogen atmosphere, and polymerization was performed for 10 hours using 4 parts by mass of azobisisobutyronitrile. Thereafter, sulfuric acid was added to the reaction solution, the reaction temperature was maintained at 90 ° C. and the reaction was performed for 10 hours, and p-tert-butoxystyrene was deprotected and converted into hydroxystyrene. Ethyl acetate was added to the obtained copolymer, followed by washing with water five times, the ethyl acetate phase was separated, and the solvent was removed to obtain a p-hydroxystyrene / styrene copolymer (hereinafter referred to as "polymer (A- 2)").

利用凝膠滲透色譜法(GPC)對所述聚合體(A-2)的分子量進行測定,結果聚苯乙烯換算的重量平均分子量(Mw)為10,000,重量平均分子量(Mw)與數量平均分子量(Mn)的比(Mw/Mn)為3.5。另外,13 C-NMR分析的結果,對羥基苯乙烯與苯乙烯的共聚莫耳比為80:20。The molecular weight of the polymer (A-2) was measured by gel permeation chromatography (GPC). As a result, the weight average molecular weight (Mw) in terms of polystyrene was 10,000, and the weight average molecular weight (Mw) and number average molecular weight ( The ratio (Mw / Mn) of Mn) was 3.5. As a result of 13 C-NMR analysis, the molar ratio of copolymerized p-hydroxystyrene and styrene was 80:20.

[合成例3]聚合體(A-4)的合成
向具備冷卻管及攪拌機的燒瓶中裝入2,2'-偶氮雙(2,4-二甲基戊腈)8質量份及二乙二醇乙基甲基醚220質量份。繼而,裝入甲基丙烯酸15質量份、甲基丙烯酸縮水甘油酯25質量份、對異丙烯基苯酚10質量份、甲基丙烯酸甲酯25質量份、甲基丙烯酸月桂酯5質量份及N-(環己基)馬來醯亞胺20質量份,進行氮氣置換後,緩緩地開始攪拌。使溶液的溫度上升至70℃,並將所述溫度保持5小時,從而獲得聚合體溶液(以下稱為「聚合體(A-4)」)。
[Synthesis Example 3] Synthesis of Polymer (A-4) A flask equipped with a cooling tube and a stirrer was charged with 8 parts by mass of 2,2'-azobis (2,4-dimethylvaleronitrile) and diethyl ether. 220 parts by mass of glycol ethyl methyl ether. Next, 15 parts by mass of methacrylic acid, 25 parts by mass of glycidyl methacrylate, 10 parts by mass of p-isopropenylphenol, 25 parts by mass of methyl methacrylate, 5 parts by mass of lauryl methacrylate, and N- (Cyclohexyl) 20 parts by mass of maleimidine, after nitrogen substitution, stirring was started slowly. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution (hereinafter referred to as "polymer (A-4)").

聚合體(A-4)的固體成分濃度為31.0質量%。利用凝膠滲透色譜法(GPC)對聚合體(A-4)的分子量進行測定,結果聚苯乙烯換算的重量平均分子量(Mw)為10,000,重量平均分子量(Mw)與數量平均分子量(Mn)的比(Mw/Mn)為2.1。The solid content concentration of the polymer (A-4) was 31.0% by mass. The molecular weight of the polymer (A-4) was measured by gel permeation chromatography (GPC). As a result, the weight average molecular weight (Mw) in terms of polystyrene was 10,000, the weight average molecular weight (Mw) and the number average molecular weight (Mn). The ratio (Mw / Mn) is 2.1.

[合成例4]聚合體(A-5)的合成
將間甲酚與對甲酚以重量比60:40的比例混合,向其中添加甲醛水溶液,使用草酸催化劑,並通過常規方法進行縮合而獲得甲酚酚醛清漆樹脂。對所述樹脂實施分級處理,截除低分子區域而獲得重量平均分子量15,000的酚醛清漆樹脂(以下稱為「聚合體(A-5)」)。
[Synthesis Example 4] Synthesis of Polymer (A-5) m-cresol and p-cresol were mixed at a weight ratio of 60:40, an aqueous formaldehyde solution was added thereto, an oxalic acid catalyst was used, and condensation was performed by a conventional method Cresol novolac resin. The resin was subjected to a classification treatment, and a low-molecular region was cut to obtain a novolak resin (hereinafter referred to as "polymer (A-5)") having a weight average molecular weight of 15,000.

[合成例5]聚合體(A-6)的合成
向安裝有溫度計、冷卻管、分餾管、攪拌器的燒瓶中裝入1-萘酚144.2 g(1.0莫耳)、甲基異丁基酮400 g、水96 g及92質量%多聚甲醛32.6 g(以甲醛換算計而為1.0莫耳)。繼而,一邊攪拌一邊添加對甲苯磺酸3.4 g。其後,在100℃下反應8小時。反應結束後,添加純水200 g,將體系內的溶液移至分液漏斗中,將水層自有機層分離去除。繼而,進行水洗直至清洗水顯示中性為止,然後在加熱減壓下將溶媒自有機層去除,從而獲得包含下述式所表示的結構單元的重量平均分子量(Mw)2,000的酚醛清漆樹脂(以下稱為「聚合體(A-6)」)。
[化18]

[Synthesis Example 5] Synthesis of Polymer (A-6) A flask equipped with a thermometer, a cooling tube, a fractionating tube, and a stirrer was charged with 144.2 g (1.0 mol) of 1-naphthol and methyl isobutyl ketone. 400 g, 96 g of water, and 32.6 g of 92% by mass paraformaldehyde (1.0 mol in terms of formaldehyde conversion). Then, 3.4 g of p-toluenesulfonic acid was added while stirring. Then, it reacted at 100 degreeC for 8 hours. After the reaction, 200 g of pure water was added, and the solution in the system was transferred to a separating funnel, and the water layer was separated and removed from the organic layer. Then, water washing was performed until the washing water showed neutrality, and then the solvent was removed from the organic layer under heating and reduced pressure to obtain a novolak resin (hereinafter referred to as a weight average molecular weight (Mw) of the structural unit represented by the following formula: 2,000) It is called "polymer (A-6)").
[Chemical 18]

[合成例6]聚合體(A-7)的合成
向具備冷卻管及攪拌機的燒瓶中裝入2,2'-偶氮雙(2,4-二甲基戊腈)8質量份及二乙二醇乙基甲基醚220質量份。繼而,裝入甲基丙烯酸15質量份、甲基丙烯酸縮水甘油酯40質量份、對異丙烯基苯酚10質量份、甲基丙烯酸甲酯10質量份、甲基丙烯酸月桂酯5質量份及N-(環己基)馬來醯亞胺20質量份,進行氮氣置換後,緩緩地開始攪拌。使溶液的溫度上升至70℃,並將所述溫度保持5小時,從而獲得聚合體溶液(以下稱為「聚合體(A-7)」)。所獲得的聚合體溶液的固體成分濃度為31.0重量%。
[Synthesis Example 6] Synthesis of Polymer (A-7) A flask equipped with a cooling tube and a stirrer was charged with 8 parts by mass of 2,2'-azobis (2,4-dimethylvaleronitrile) and diethyl ether. 220 parts by mass of glycol ethyl methyl ether. Next, 15 parts by mass of methacrylic acid, 40 parts by mass of glycidyl methacrylate, 10 parts by mass of p-isopropenylphenol, 10 parts by mass of methyl methacrylate, 5 parts by mass of lauryl methacrylate, and N- (Cyclohexyl) 20 parts by mass of maleimidine, after nitrogen substitution, stirring was started slowly. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution (hereinafter referred to as "polymer (A-7)"). The solid content concentration of the obtained polymer solution was 31.0% by weight.

[合成例7]聚合體(A-8)的合成
在四氫呋喃1000 mL中溶解作為陰離子聚合引發劑的正丁基鋰0.05 g後,冷卻至-70℃。向所述溶液中添加2-甲基-1,3-丁二烯(異戊二烯)45 g而進行3小時聚合。繼而,添加對叔丁氧基苯乙烯55 g,進而進行2小時聚合,添加甲醇而停止聚合,並使與大量的甲醇混合而生成的聚合體凝固。
[Synthesis Example 7] Synthesis of Polymer (A-8) In 1000 mL of tetrahydrofuran, 0.05 g of n-butyllithium as an anionic polymerization initiator was dissolved, and then cooled to -70 ° C. 45 g of 2-methyl-1,3-butadiene (isoprene) was added to the solution, and polymerization was performed for 3 hours. Next, 55 g of p-tert-butoxystyrene was added, and polymerization was further performed for 2 hours. Polymerization was stopped by adding methanol, and a polymer produced by mixing with a large amount of methanol was solidified.

繼而,將所獲得的共聚物溶解於四氫呋喃500 g中,添加對甲苯磺酸一水合物5 g及蒸餾水10 g,在加熱回流下,進行12小時脫保護反應。其後,將反應液投入至大量的蒸餾水中,使共聚物凝固並加以回收,在減壓下進行乾燥而獲得白色的共聚物(A-8)。所述共聚物(A-8)為A-B型([異戊二烯]-[對羥基苯乙烯])的嵌段共聚物,Mw為35,000。13 C-NMR測定的結果,包含異戊二烯、對羥基苯乙烯的構成單元的共聚物中的質量比為55/45。Next, the obtained copolymer was dissolved in 500 g of tetrahydrofuran, 5 g of p-toluenesulfonic acid monohydrate and 10 g of distilled water were added, and a deprotection reaction was performed under heating and refluxing for 12 hours. Thereafter, the reaction solution was poured into a large amount of distilled water, the copolymer was coagulated and recovered, and dried under reduced pressure to obtain a white copolymer (A-8). The copolymer (A-8) is an AB-type ([isoprene]-[p-hydroxystyrene]) block copolymer, and Mw is 35,000. As a result of 13 C-NMR measurement, the mass ratio in the copolymer including the structural units of isoprene and p-hydroxystyrene was 55/45.

[合成例8]聚合體(A-9)的合成
代替使用2-甲基-1,3-丁二烯(異戊二烯)而使用1,3-丁二烯,除此以外,與合成例7同樣地進行合成,從而獲得共聚物(A-9)。所述共聚物(A-9)為A-B型([1,3-丁二烯]-[對羥基苯乙烯])的嵌段共聚物,Mw為30,000。13 C-NMR測定的結果,包含1,3-丁二烯、對羥基苯乙烯的構成單元的共聚物中的質量比為30/70。
[Synthesis Example 8] In addition to synthesis of polymer (A-9), instead of using 2-methyl-1,3-butadiene (isoprene), 1,3-butadiene was used. Example 7 was synthesized in the same manner to obtain a copolymer (A-9). The copolymer (A-9) is an AB-type ([1,3-butadiene]-[p-hydroxystyrene]) block copolymer, and Mw is 30,000. As a result of 13 C-NMR measurement, the mass ratio in the copolymer including 1,3-butadiene and the constituent unit of p-hydroxystyrene was 30/70.

[合成例9]聚合體(A-10)的合成
將在蒸餾水200質量份中溶解十二烷基苯磺酸鈉5質量份而成的水溶液、作為原料單體的丁二烯46質量份、苯乙烯31質量份、甲基丙烯酸2-羥基丁酯10質量份、甲基丙烯酸9質量份、二乙烯基苯4質量份及氧化還原催化劑裝入至高壓釜中,溫度調整為10℃後,添加作為聚合引發劑的氫氧化枯烯0.01質量份而進行乳化聚合,直至聚合轉化率85%為止。
[Synthesis Example 9] Synthesis of Polymer (A-10) An aqueous solution prepared by dissolving 5 parts by mass of sodium dodecylbenzenesulfonate in 200 parts by mass of distilled water, 46 parts by mass of butadiene as a raw material monomer, 31 parts by mass of styrene, 10 parts by mass of 2-hydroxybutyl methacrylate, 9 parts by mass of methacrylic acid, 4 parts by mass of divinylbenzene, and a redox catalyst were charged into an autoclave, and the temperature was adjusted to 10 ° C. 0.01 parts by mass of cumene hydroxide was added as a polymerization initiator to perform emulsion polymerization until the polymerization conversion rate was 85%.

繼而,添加作為反應停止劑的N,N-二乙基羥基胺而合成共聚乳液。其後,向所述溶液中吹入水蒸氣而將未反應的原料單體去除,然後將所述溶液添加於5%氯化鈣水溶液中,利用設定為80℃的送風乾燥機對所析出的共聚物進行乾燥,由此分離共聚物(A-10)。關於共聚物(A-10),通過差示掃描量熱測定(Differential Scanning Calorimetry,DSC)法來測定玻璃化轉變溫度(Tg),結果為-27℃。(莫耳比63/22/5/8/2)Then, N, N-diethylhydroxylamine was added as a reaction stopper to synthesize a copolymer emulsion. Thereafter, water vapor was blown into the solution to remove unreacted raw material monomers, and then the solution was added to a 5% calcium chloride aqueous solution, and the precipitated copolymer was copolymerized with a blower dryer set at 80 ° C. The copolymer was dried to isolate the copolymer (A-10). Regarding the copolymer (A-10), the glass transition temperature (Tg) was measured by a differential scanning calorimetry (DSC) method, and it was -27 ° C. (Morbi 63/22/5/8/2)

〈3.組成物的製備〉<3. Preparation of composition>

[實施例1]
使聚合體(A-1)40質量份、聚合體(A-9)60質量份、感放射線性化合物(B-1)25質量份、交聯性化合物(D-3)10質量份、密接助劑(E-1)7質量份及表面活性劑(F-2)0.05質量份溶解於溶劑(C-1)260質量份及溶劑(C-5)180質量份中,從而製備組成物。使用所獲得的組成物來進行規定的評價。
[Example 1]
40 parts by mass of the polymer (A-1), 60 parts by mass of the polymer (A-9), 25 parts by mass of the radiation-sensitive compound (B-1), 10 parts by mass of the crosslinkable compound (D-3), and closely adhere 7 parts by mass of the auxiliary agent (E-1) and 0.05 parts by mass of the surfactant (F-2) were dissolved in 260 parts by mass of the solvent (C-1) and 180 parts by mass of the solvent (C-5) to prepare a composition. A predetermined evaluation was performed using the obtained composition.

[實施例2~實施例13、比較例1~比較例2]
在實施例中,如表1所示那樣變更調配成分的種類及量,除此以外,與實施例1同樣地製備組成物。使用所獲得的組成物來進行規定的評價。
[Example 2 to Example 13, Comparative Example 1 to Comparative Example 2]
A composition was prepared in the same manner as in Example 1 except that the types and amounts of the blending components were changed as shown in Table 1. A predetermined evaluation was performed using the obtained composition.

表1中的各成分的詳細情況如下所述。The details of each component in Table 1 are as follows.

(聚合體(A))
A-1:合成例1中所獲得的聚合體(A-1)
A-2:合成例2中所獲得的聚合體(A-2)
A-3:商品名「馬魯卡林可(MARUKA LYNCUR)M2PH」(丸善石油化學(股)公司製造)
A-4:合成例3中所獲得的聚合體(A-4)
A-5:合成例4中所獲得的聚合體(A-5)
A-6:合成例5中所獲得的聚合體(A-6)
A-7:合成例6中所獲得的聚合體(A-7)
A-8:合成例7中所獲得的聚合體(A-8)
A-9:合成例8中所獲得的聚合體(A-9)
A-10:合成例9中所獲得的聚合體(A-10)
(Polymer (A))
A-1: Polymer (A-1) obtained in Synthesis Example 1
A-2: Polymer (A-2) obtained in Synthesis Example 2
A-3: Trade name "MARUKA LYNCUR M2PH" (manufactured by Maruzan Petrochemical Co., Ltd.)
A-4: Polymer (A-4) obtained in Synthesis Example 3
A-5: Polymer (A-5) obtained in Synthesis Example 4
A-6: Polymer (A-6) obtained in Synthesis Example 5
A-7: Polymer (A-7) obtained in Synthesis Example 6
A-8: Polymer obtained in Synthesis Example 7 (A-8)
A-9: Polymer (A-9) obtained in Synthesis Example 8
A-10: Polymer (A-10) obtained in Synthesis Example 9

(感放射線性化合物(B))
B-1:1,1-雙(4-羥基苯基)-1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]乙烷與1,2-萘醌二疊氮-5-磺酸的縮合物(莫耳比=1.0:2.0)
B-2:1,1,1-三(對羥基苯基)乙烷與1,2-萘醌二疊氮-5-磺醯氯的縮合物(莫耳比=1.0:2.0)
(Radioactive compound (B))
B-1: 1,1-bis (4-hydroxyphenyl) -1- [4- [1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethane and 1,2- Condensate of naphthoquinonediazide-5-sulfonic acid (Molar ratio = 1.0: 2.0)
B-2: Condensate of 1,1,1-tris (p-hydroxyphenyl) ethane and 1,2-naphthoquinonediazide-5-sulfonyl chloride (Molar ratio = 1.0: 2.0)

(溶劑(C))
C-1:丙二醇單甲醚乙酸酯(Propylene Glycol Monomethyl Ether Acetate,PGMEA)
C-2:甲基戊基酮
C-3:乳酸乙酯
C-4:二乙二醇乙基甲基醚
C-5:二丙酮醇
(Solvent (C))
C-1: Propylene Glycol Monomethyl Ether Acetate (PGMEA)
C-2: methylpentyl ketone
C-3: ethyl lactate
C-4: Diethylene glycol ethyl methyl ether
C-5: Diacetone alcohol

(交聯性化合物(D))
D-1:六甲氧基羥甲基三聚氰胺、商品名「尼卡拉克(NIKALACK)MW-390」(三和化學(股)製造)
D-2:三羥甲基丙烷三縮水甘油醚、商品名「丹納考爾(Denacol)EX-321L」(長瀨化成(NAGASE ChemteX)(股)製造)
D-3:下述式(D3)所表示的化合物
D-4:商品名「XD-1000」(日本化藥(股)製造)
D-5:偏苯三甲酸酐
(Crosslinkable compound (D))
D-1: Hexamethoxymethylol melamine, trade name "NIKALACK MW-390" (manufactured by Sanwa Chemical Co., Ltd.)
D-2: Trimethylolpropane triglycidyl ether, trade name "Denacol EX-321L" (manufactured by NAGASE ChemteX)
D-3: Compound represented by the following formula (D3)
D-4: Trade name "XD-1000" (manufactured by Nippon Kayaku Co., Ltd.)
D-5: trimellitic anhydride

[化19]

[Chemical 19]

(密接助劑(E))
E-1:三(3-(三甲氧基矽烷基)丙基)異氰脲酸酯、GE東芝矽酮(股)製造
E-2:3-縮水甘油氧基丙基三甲氧基矽烷、JNC(股)製造
(Adhesion aid (E))
E-1: Tris (3- (trimethoxysilyl) propyl) isocyanurate, manufactured by GE Toshiba Silicone
E-2: 3-Glycidoxypropyltrimethoxysilane, manufactured by JNC

(表面活性劑(F))
F-1:氟系表面活性劑、商品名「福傑特(Ftergent)FTX-218」、尼歐斯(NEOS)(股)製造
F-2:矽酮系表面活性劑、商品名「SH8400 FLUID」、東麗道康寧(Toray Dow Corning)(股)製造
(Surfactant (F))
F-1: Fluorine-based surfactant, trade name "Ftergent FTX-218", manufactured by NEOS
F-2: Silicone surfactant, trade name "SH8400 FLUID", manufactured by Toray Dow Corning Co., Ltd.

(其他添加物(G))
G-1:4,4'-[1-[4-[2-(4-羥基苯基)-2-丙基]苯基]亞乙基]雙酚
(Other additives (G))
G-1: 4,4 '-[1- [4- [2- (4-hydroxyphenyl) -2-propyl] phenyl] ethylene] bisphenol

〈4.評價〉
對實施例及比較例的各組成物進行下述評價。將結果示於表1中。
<4. Evaluation>
Each composition of an Example and a comparative example was evaluated as follows. The results are shown in Table 1.

(4-1 伸長)
將各組成物塗布於帶有脫模材的基板上,其後,使用熱板在90℃下加熱2分鐘,從而製作厚度10 μm的均勻的塗膜。繼而,使用對準曝光機(蘇斯微技術(Suss Microtec)公司製造,型號「MA-100」),以波長365 nm中的曝光量成為300 mJ/cm2 的方式對塗膜的整個面照射來自高壓水銀燈的紫外線。繼而,針對塗膜,使用熱板在120℃下加熱5分鐘,進而,使用烘箱在230℃下加熱30分鐘。
(4-1 elongation)
Each composition was applied to a substrate with a release material, and then heated at 90 ° C. for 2 minutes using a hot plate to produce a uniform coating film having a thickness of 10 μm. Next, the entire surface of the coating film was irradiated with an alignment exposure machine (manufactured by Suss Microtec, model "MA-100") so that the exposure amount at a wavelength of 365 nm became 300 mJ / cm 2 Ultraviolet light from a high-pressure mercury lamp. Next, the coating film was heated at 120 ° C for 5 minutes using a hot plate, and further heated at 230 ° C for 30 minutes using an oven.

將加熱後的塗膜自帶有脫模材的基板剝離,並切斷成2.5 cm×0.5 cm的短條狀。通過拉伸壓縮試驗機(SDWS-0201型,今田製作所(股)製造)對塗膜的拉伸斷裂伸長(%)進行測定(條件:夾頭距離=1.0 cm、拉伸速度=5 mm/min、測定溫度=23℃)。結果為5次測定值的平均值。The heated coating film was peeled from the substrate with a release material, and cut into a strip shape of 2.5 cm × 0.5 cm. The tensile breaking elongation (%) of the coating film was measured with a tensile compression tester (SDWS-0201 type, manufactured by Ida Manufacturing Co., Ltd.) (condition: chuck distance = 1.0 cm, tensile speed = 5 mm / min (Measurement temperature = 23 ℃). The result is an average of 5 measured values.

(4-2 斷裂強度)
在所述伸長的評價中,將塗膜斷裂時的應力設為斷裂強度。斷裂強度採用通過以下式而算出的值。

(斷裂強度)=(斷裂時的拉伸力)/(試樣的剖面積)
(4-2 breaking strength)
In the evaluation of the elongation, the stress when the coating film was broken was taken as the breaking strength. The breaking strength is a value calculated by the following formula.

(Break strength) = (Tensile force at break) / (Cross-sectional area of the sample)

(4-3 彎曲特性)
依據日本工業標準(Japanese Industrial Standards,JIS)K 5600-5-1(耐屈曲性、圓筒形芯棒法),在溫度25℃、相對濕度50%的環境下,將利用與4-1相同的方法進行加熱處理後的塗膜沿外徑0.5 mm的芯棒折曲180度(卷邊),以目視觀察塗膜的破裂、剝離。將未產生破裂、剝離的情況設為A評價,將產生了破裂、剝離的情況設為B評價。
(4-3 bending characteristics)
According to Japanese Industrial Standards (JIS) K 5600-5-1 (buckling resistance, cylindrical mandrel method), under the environment of a temperature of 25 ° C and a relative humidity of 50%, it will be used as 4-1 The coating film subjected to the heat treatment was bent 180 degrees (crimped) along a mandrel with an outer diameter of 0.5 mm, and the coating film was visually observed for cracking and peeling. A case where cracking and peeling did not occur was evaluated as A, and a case where cracking and peeling had occurred was evaluated as B.

(4-4 絕緣性)
在如圖6所示的具有基板50與形成於所述基板50上的圖案狀的銅箔51的電絕緣性評價用的基材52上塗布各組成物,其後,使用熱板在90℃下加熱2分鐘,從而製作具有銅箔51上的厚度為10 μm的塗膜的基材。其後,使用對流式烘箱在230℃下加熱30分鐘而使塗膜硬化,從而獲得硬化膜。將所獲得的試驗基材投入至遷移評價系統(塔拜愛斯派克(Tabai Espec)(股)公司製造的AEI, EHS-221MD)中,在溫度121℃、濕度85%、壓力1.2氣壓、施加電壓10 V的條件下處理100小時。其後,對試驗基材的電阻值(Ω)進行測定來確認電絕緣性。將確認到絕緣性的情況設為A評價。
(4-4 insulation)
Each composition is coated on a substrate 52 for evaluating the electrical insulation properties of the substrate 50 and the patterned copper foil 51 formed on the substrate 50 as shown in FIG. 6, and thereafter, a hot plate is used at 90 ° C. Under heating for 2 minutes, a base material having a coating film having a thickness of 10 μm on the copper foil 51 was produced. Thereafter, the coating film was cured by heating at 230 ° C. for 30 minutes using a convection oven to obtain a cured film. The obtained test substrate was put into a migration evaluation system (AEI, EHS-221MD, manufactured by Tabai Espec Co., Ltd.) at a temperature of 121 ° C, a humidity of 85%, a pressure of 1.2 atmospheres, and an application of Processed at a voltage of 10 V for 100 hours. Thereafter, the resistance value (Ω) of the test substrate was measured to confirm the electrical insulation properties. When the insulation property was confirmed, it was set to A evaluation.

(4-5 翹曲)
將利用與4-1相同的方法進行加熱處理後的塗膜切成5 cm見方,將端部的浮起高度為10 mm以內的情況設為A評價,將浮起高度處於10 mm以上的情況設為B評價。
(4-5 warping)
The coating film after the heat treatment by the same method as 4-1 was cut into 5 cm squares, and the case where the floating height at the end was within 10 mm was evaluated as A, and the floating height was 10 mm or more. The evaluation was set to B.

(4-6 後烘烤後的形狀)
將樹脂組成物旋塗於6寸的矽晶片上,使用熱板在90℃下加熱2分鐘,從而製作厚度3 μm的均勻的塗膜。其後,使用對準曝光機(蘇斯微技術(Suss Microtec)公司製造,型號「MA-100」),介隔以6 μm間隔配置有多個去除一邊為2 μm的正方形的圖案的遮罩,以波長365 nm中的曝光量成為300 mJ/cm2 的方式曝光來自高壓水銀燈的紫外線。
(4-6 shape after baking)
The resin composition was spin-coated on a 6-inch silicon wafer, and heated at 90 ° C. for 2 minutes using a hot plate to prepare a uniform coating film having a thickness of 3 μm. Thereafter, a mask using a registration exposure machine (manufactured by Suss Microtec Co., Ltd., model "MA-100") was arranged at intervals of 6 μm, and a plurality of masks with a square pattern of 2 μm on one side were removed. The ultraviolet rays from the high-pressure mercury lamp were exposed so that the exposure amount at a wavelength of 365 nm became 300 mJ / cm 2 .

繼而,使用2.38質量%四甲基氫氧化銨水溶液在23℃下浸漬顯影60秒。其後,利用超純水清洗60秒,並利用空氣進行風乾,然後使用所述對準曝光機,以波長365 nm中的曝光量成為300 mJ/cm2 的方式對塗膜的整個面照射來自高壓水銀燈的紫外線。Then, it was immersed and developed at 23 ° C. for 60 seconds using a 2.38 mass% tetramethylammonium hydroxide aqueous solution. Thereafter, the entire surface of the coating film was irradiated with ultra pure water for 60 seconds and air-dried using the alignment exposure machine so that the exposure amount at a wavelength of 365 nm became 300 mJ / cm 2 . Ultraviolet light from a high pressure mercury lamp.

繼而,針對塗膜,使用熱板在120℃下加熱5分鐘,進而,利用烘箱在230℃下加熱30分鐘,使樹脂塗膜硬化而獲得硬化膜。針對以所述方式獲得的去除一邊為2 μm的正方形的圖案,使用掃描式電子顯微鏡(日立製作所(股)製造,S-4200)以1500倍的倍率觀察剖面形狀,並對剖面形狀進行評價。將圖案未以鄰接的圖案彼此接觸的程度變形且未填埋圖案開口部的情況(維持有開口的情況)設為A評價,將因圖案的變形而鄰接的圖案彼此接觸而填埋圖案開口部的情況設為B評價。Next, the coating film was heated at 120 ° C. for 5 minutes using a hot plate, and further heated at 230 ° C. for 30 minutes in an oven to harden the resin coating film to obtain a cured film. The cross-sectional shape was observed at a magnification of 1500 times using a scanning electron microscope (manufactured by Hitachi, Ltd., S-4200) with respect to the pattern obtained by removing a square having a side of 2 μm in this manner, and the cross-sectional shape was evaluated. A case where a pattern is not deformed to the extent that adjacent patterns are in contact with each other and a pattern opening is not buried (a case where an opening is maintained) is evaluated as A. The pattern opening is filled with the adjacent patterns in contact with each other to fill the pattern opening. In the case of B evaluation.

[表1]
[Table 1]

1‧‧‧可撓性印刷基板1‧‧‧ Flexible printed circuit board

1a‧‧‧有機EL元件 1a‧‧‧Organic EL element

1b‧‧‧觸控式螢幕 1b‧‧‧Touch screen

2‧‧‧可撓性基板 2‧‧‧ flexible substrate

3‧‧‧導電層 3‧‧‧ conductive layer

4‧‧‧導電層 4‧‧‧ conductive layer

8‧‧‧塗膜 8‧‧‧ Coating

9‧‧‧開口區域(開口/接觸孔) 9‧‧‧ Opening area (opening / contact hole)

10、10a、10b、10c‧‧‧絕緣性的硬化膜 10, 10a, 10b, 10c‧‧‧Insulated hardened film

21‧‧‧配線層 21‧‧‧Wiring layer

22‧‧‧顯示用電極 22‧‧‧Display electrode

23‧‧‧配線圖案 23‧‧‧Wiring pattern

24‧‧‧有機發光層 24‧‧‧Organic light emitting layer

25‧‧‧密封層 25‧‧‧Sealing layer

26‧‧‧偏光膜 26‧‧‧Polarizing film

27‧‧‧控制用晶片 27‧‧‧control chip

31‧‧‧檢測電極 31‧‧‧detection electrode

32‧‧‧配線電極 32‧‧‧Wiring electrode

33‧‧‧電橋用電極層 33‧‧‧Bridge electrode layer

50‧‧‧絕緣性評價用的基材所具備的基板 50‧‧‧ Substrates for base materials for insulation evaluation

51‧‧‧銅箔 51‧‧‧copper foil

52‧‧‧絕緣性評價用的基材 52‧‧‧Substrate for insulation evaluation

A1‧‧‧主動區域 A1‧‧‧active area

A2‧‧‧非主動區域 A2‧‧‧ inactive area

圖1是示意性表示作為本發明的配線構件的一實施方式的可撓性印刷基板的結構例的剖面圖。FIG. 1 is a cross-sectional view schematically showing a configuration example of a flexible printed circuit board as an embodiment of a wiring member of the present invention.

圖2A是圖1所示的可撓性印刷基板的步驟剖面圖。 FIG. 2A is a step sectional view of the flexible printed substrate shown in FIG. 1.

圖2B是圖1所示的可撓性印刷基板的步驟剖面圖。 FIG. 2B is a step cross-sectional view of the flexible printed substrate shown in FIG. 1.

圖2C是圖1所示的可撓性印刷基板的步驟剖面圖。 FIG. 2C is a step cross-sectional view of the flexible printed substrate shown in FIG. 1.

圖2D是圖1所示的可撓性印刷基板的步驟剖面圖。 FIG. 2D is a step cross-sectional view of the flexible printed substrate shown in FIG. 1.

圖2E是圖1所示的可撓性印刷基板的步驟剖面圖。 FIG. 2E is a step sectional view of the flexible printed substrate shown in FIG. 1.

圖3是示意性表示作為本發明的配線構件的一實施方式的有機電致發光(Electroluminescence,EL)元件的結構例的剖面圖。 3 is a cross-sectional view schematically showing a configuration example of an organic electroluminescence (EL) element as an embodiment of a wiring member of the present invention.

圖4A是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4A is a step sectional view of the organic EL element shown in FIG. 3.

圖4B是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4B is a step sectional view of the organic EL element shown in FIG. 3.

圖4C是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4C is a step sectional view of the organic EL element shown in FIG. 3.

圖4D是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4D is a step sectional view of the organic EL element shown in FIG. 3.

圖4E是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4E is a step sectional view of the organic EL element shown in FIG. 3.

圖4F是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4F is a step sectional view of the organic EL element shown in FIG. 3.

圖4G是圖3所示的有機EL元件的步驟剖面圖。 FIG. 4G is a step sectional view of the organic EL element shown in FIG. 3.

圖5是示意性表示作為本發明的配線構件的一實施方式的觸控式螢幕的結構例的剖面圖。 FIG. 5 is a cross-sectional view schematically showing a configuration example of a touch screen as an embodiment of a wiring member of the present invention.

圖6是示意性表示絕緣性評價中所使用的基材的平面圖。 FIG. 6 is a plan view schematically showing a substrate used in the insulation evaluation.

Claims (15)

一種配線構件,其包括基板及配置於所述基板的上層的硬化膜,且所述配線構件的特徵在於: 在使所述配線構件的與所述硬化膜相反的一側的所述基板面沿外徑0.5 mm的芯棒屈曲180°時,不產生所述硬化膜的破裂或剝離。A wiring member includes a substrate and a cured film disposed on an upper layer of the substrate, and the wiring member is characterized by: When the substrate surface of the wiring member on the side opposite to the cured film was bent 180 ° along a mandrel with an outer diameter of 0.5 mm, the cured film did not crack or peel. 如申請專利範圍第1項所述的配線構件,其中所述硬化膜的最厚的位置的膜厚為0.3 μm~20 μm。The wiring member according to item 1 of the scope of patent application, wherein the film thickness of the thickest portion of the cured film is 0.3 μm to 20 μm. 如申請專利範圍第1項所述的配線構件,其中將所述硬化膜換算為膜厚10 μm時的下述式所表示的斷裂伸長率為7%以上; 斷裂伸長率(%)={(L1 -L0 )/L0 }×(10/T)×100 式中,T為所述硬化膜的厚度[μm],L0 為試驗片的初始長度,L1 為斷裂時的試驗片的長度。The wiring member according to item 1 of the scope of patent application, wherein the cured film is converted to an elongation at break of 7% or more expressed by the following formula when the film thickness is 10 μm; the elongation at break (%) = {( L 1 -L 0 ) / L 0 } × (10 / T) × 100 where T is the thickness of the cured film [μm], L 0 is the initial length of the test piece, and L 1 is the test piece when it is broken length. 如申請專利範圍第1項或第2項所述的配線構件,其中在所述配線構件的一部分具有屈曲部。The wiring member according to claim 1 or claim 2, wherein a portion of the wiring member has a buckled portion. 如申請專利範圍第1項或第2項所述的配線構件,其中能夠用作具有主動區域及在與所述基板面平行的方向上鄰接於所述主動區域的非主動區域的顯示器基板或觸控式螢幕基板。The wiring member according to item 1 or 2 of the scope of patent application, which can be used as a display substrate or a touch panel having an active area and an inactive area adjacent to the active area in a direction parallel to the substrate surface. Controlled screen substrate. 如申請專利範圍第5項所述的配線構件,其中所述非主動區域自所述顯示器基板或所述觸控式螢幕基板的主面側朝向與所述主面相反的一側的背面側屈曲。The wiring member according to item 5 of the scope of patent application, wherein the inactive area is bent from a main surface side of the display substrate or the touch screen substrate toward a rear surface side opposite to the main surface . 如申請專利範圍第6項所述的配線構件,其中所述非主動區域以所述非主動區域的背面與所述主動區域的背面相向的方式屈曲180°。The wiring member according to item 6 of the scope of patent application, wherein the non-active area is bent by 180 ° so that a back surface of the non-active area faces a back surface of the active area. 如申請專利範圍第5項所述的配線構件,其中位於所述非主動區域內的所述硬化膜具有通過相對於所述正型感光膜的光刻法而形成的圖案。The wiring member according to item 5 of the scope of patent application, wherein the cured film located in the inactive region has a pattern formed by a photolithography method with respect to the positive-type photosensitive film. 如申請專利範圍第8項所述的配線構件,其中所述圖案為孔圖案及電路圖案中的至少一種。The wiring member according to item 8 of the scope of patent application, wherein the pattern is at least one of a hole pattern and a circuit pattern. 如申請專利範圍第1項至第3項中任一項所述的配線構件,其中所述硬化膜為感光膜形成用組成物的塗膜,且 所述感光膜形成用組成物包含: (A)具有鹼可溶性基的聚合體、 (B)感放射線性化合物、及 (C)溶劑。The wiring member according to any one of claims 1 to 3, wherein the cured film is a coating film of a composition for forming a photosensitive film, and The composition for forming a photosensitive film includes: (A) a polymer having an alkali-soluble group, (B) radiation-sensitive compounds, and (C) Solvent. 如申請專利範圍第10項所述的配線構件,其中所述(A)聚合體具有含有與所述鹼可溶性基不同的交聯性官能基的結構單元(m1)。The wiring member according to claim 10, wherein the (A) polymer has a structural unit (m1) containing a crosslinkable functional group different from the alkali-soluble group. 如申請專利範圍第10項所述的配線構件,其中所述感光膜形成用組成物還包含(D)交聯性化合物。The wiring member according to claim 10, wherein the composition for forming a photosensitive film further contains (D) a crosslinkable compound. 如申請專利範圍第9項所述的配線構件,其中所述(A)聚合體包含源自(甲基)丙烯酸酯、丁二烯、異戊二烯及氯丁二烯中的至少一種的結構單元(m2)。The wiring member according to item 9 of the scope of patent application, wherein the (A) polymer contains a structure derived from at least one of (meth) acrylate, butadiene, isoprene, and chloroprene Unit (m2). 如申請專利範圍第9項所述的配線構件,其中在所述(A)聚合體或與所述(A)聚合體不同的含有於所述感光膜形成用組成物中的聚合體中包含下述式所表示的結構單元(a3); 式(a3)中,多個R5 分別獨立地表示氫原子、碳數1~4的烷基或碳數1~4的烷氧基;R6 表示氫原子或碳數1~4的烷基。The wiring member according to item 9 of the scope of patent application, wherein the (A) polymer or a polymer different from the (A) polymer and contained in the photosensitive film-forming composition includes the following The structural unit (a3) represented by the formula; In formula (a3), a plurality of R 5 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms; R 6 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms . 如申請專利範圍第13項所述的配線構件,其中包含所述結構單元(m2)的聚合體的含量為所述感光膜形成用組成物中的溶劑以外的成分的合計質量的10質量%以上且90質量%以下。The wiring member according to item 13 of the scope of patent application, wherein the content of the polymer including the structural unit (m2) is 10% by mass or more of the total mass of components other than the solvent in the photosensitive film forming composition. And 90% by mass or less.
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