TW201932788A - Magnetic element and eddy current sensor using the same - Google Patents

Abstract

A magnetic element for strengthening a magnetic field formed in an object and an eddy current sensor using the magnetic field are provided. The eddy current sensor includes a bottom face portion which is a magnetic body, a magnetic core portion provided at the middle of the bottom face portion and a peripheral wall portion provided on the periphery of the bottom face portion. The eddy current sensor further includes an excitation coil disposed on an outer periphery of the magnetic core portion and capable of generating a magnetic field and an excitation coil disposed on an outer periphery of the peripheral wall portion and capable of generating a magnetic field.

Description

Magnetic component, and eddy current detector using the same

The present invention relates to a magnetic element and an eddy current type detector using the same.

In recent years, with the progress of high integration of semiconductor elements, wiring of circuits has been gradually miniaturized, and the distance between wirings has also become narrower. Here, it is necessary to planarize the surface of the semiconductor wafer as the object to be polished, and as one method of the planarization method, polishing (polishing) is performed by a polishing apparatus.

The polishing apparatus has a polishing table for holding a polishing pad for polishing an object to be polished, and a top ring for holding the object to be polished and pressed to the polishing pad. The polishing table and the top ring are respectively rotationally driven by a driving portion such as a motor. The object to be polished is ground by causing a liquid (slurry) containing an abrasive to flow on the polishing pad and pressing the object to be polished held by the top ring thereto.

In the polishing apparatus, when the polishing of the object to be polished is insufficient, the circuit is not insulated, and a short circuit is generated, and in the case of excessive polishing, an increase in the resistance due to a decrease in the cross-sectional area of the wiring occurs. Or the wiring itself is completely removed, and the problem of the circuit itself cannot be formed. Therefore, in the grinding apparatus, it is necessary to detect the optimum polishing end point.

As a technique as described above, there is a structure described in JP-A-2017-58245. In this technique, an eddy current type detector is used for detecting the polishing end point, and the eddy current type detector uses a so-called can type coil. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Special Opening 2017-58245

[Problems to be solved by the invention]

On the surface of the object to be polished, there are cases where the metal is distributed in a wide-surface shape (agglomerate) and a case where fine wires such as copper are locally present on the surface. In the case where the surface is locally present, it is required to make the eddy current density flowing in the object to be polished larger than the case where the metal is distributed in a wider surface shape, that is, the eddy current type detector changes the magnetic field formed in the object to be polished. Stronger.

One aspect of the present invention has been made to solve the above problems, and an object thereof is to provide a magnetic element that is stronger in a magnetic field of an object to be polished and an eddy current type detector using the magnetic element. [Means for solving problems]

In order to solve the above problems, in a first aspect, a magnetic element is provided, comprising: a bottom magnetic body; a central magnetic body, wherein the central magnetic body is provided at a center of the bottom magnetic body; and a peripheral magnetic body, the periphery a magnetic portion provided at a peripheral portion of the bottom magnetic body; an inner coil disposed on an outer circumference of the central magnetic body and capable of generating a magnetic field; and an outer coil disposed at the peripheral magnetic body The outer circumference is capable of generating a magnetic field.

In the present embodiment, an external coil that is disposed on the outer periphery of the peripheral magnetic body and that generates a magnetic field is provided. Therefore, conventionally, only the inner coil which is disposed on the outer circumference of the central magnetic body and capable of generating a magnetic field has been used. According to the present embodiment, the magnetic field can be strengthened more than ever.

In the magnetic element according to the first aspect of the invention, the bottom magnetic body has a columnar shape, and the peripheral magnetic body is disposed at both ends of the columnar shape. The magnetic element can be, for example, an E-shaped coil.

According to a third aspect of the invention, the magnetic element according to the first aspect is characterized in that the peripheral magnetic body is provided in a plurality of portions around the bottom magnetic body. The number of peripheral magnetic bodies may be two, three, four, six, etc., and may be multi-pole coils.

According to a fourth aspect of the invention, the magnetic material according to the first aspect is characterized in that the peripheral magnetic body is a wall portion provided at a peripheral portion of the bottom magnetic body to surround the central magnetic body. The peripheral magnetic body may have a cylindrical shape, a quadrangular cylindrical shape, or the like. These shapes are the same as those of the conventional can type coil. However, in the conventional can-type coil, there is no external coil that can be placed on the outer circumference of the peripheral magnetic body and can generate a magnetic field. Therefore, the fourth aspect can strengthen the magnetic field more than the conventional can type coil.

The magnetic element according to any one of the first aspect to the fourth aspect, wherein the internal coil and the external coil are electrically connected in parallel.

The magnetic element according to any one of the first aspect to the fifth aspect, characterized in that the direction of the magnetic field generated by the inner coil in the central magnetic body and the outer coil are in the The direction of the magnetic field generated in the central magnetic body can be the same.

The magnetic element according to any one of the first aspect to the sixth aspect, characterized in that the detection element is disposed on an outer circumference of the central magnetic body and/or the peripheral portion. The outer circumference of the magnetic body can detect the magnetic field.

In the magnetic element according to the seventh aspect, the magnetic element is provided with a virtual coil that is disposed on an outer circumference of the central magnetic body and/or an outer circumference of the peripheral magnetic body, and is capable of detecting a magnetic field.

The magnetic element according to any one of the first aspect to the sixth aspect, characterized in that the detection element is disposed on an outer circumference of the central magnetic body and is capable of detecting a magnetic field. The virtual coil is disposed on the outer circumference of the central magnetic body to detect a magnetic field. According to this embodiment, the following effects are obtained. In some cases, it is not necessary to detect the coil or the dummy coil on the outer circumference of the peripheral magnetic body. For example, in some cases, the detection coil and the dummy coil are not provided in the peripheral magnetic body, and by using the magnetic element, it is desirable to limit the range of acquisition of the interlinkage magnetic flux generated by the eddy current generated by the external coil and the internal coil. In other words, it is desirable to limit the range of the interlinkage magnetic flux that can be obtained by the detection coil and the dummy coil disposed on the outer circumference of the central magnetic body.

In the ninth aspect, the eddy current type detector is characterized in that the magnetic element according to any one of the seventh to ninth aspects is used.

According to an eleventh aspect, a polishing apparatus includes: a polishing table to which a polishing pad for polishing an object to be polished can be attached; and a driving unit that can drive the polishing table to rotate; and a holding portion The holding portion is capable of holding the object to be polished and pressing the polishing pad; the eddy current type detector according to the tenth aspect of the invention, wherein the eddy current type detector is disposed inside the polishing table An eddy current formed by the inner coil and the outer coil in the object to be polished by the rotation of the polishing table can be detected by the detection coil; and an end point detecting unit capable of detecting the end point detecting unit The eddy current detected from the detection indicates the end of the polishing of the end of the polishing of the object to be polished.

The polishing apparatus according to the eleventh aspect, wherein the end point detecting unit determines a polishing rate of the object to be polished from the detected eddy current, and calculates the polishing rate The polishing amount at the time of polishing the object to be polished is such that the polishing end point can be detected.

The polishing apparatus according to the twelfth aspect, wherein the end point detecting unit compares a film thickness-related data obtained from the eddy current with a film thickness related to a film thickness predicted from the polishing rate. When the result of the comparison is larger than the specified value, the data relating to the film thickness obtained from the eddy current can be not used.

The polishing apparatus according to the twelfth aspect, wherein the end point detecting unit is capable of detecting the expected amount of polishing and a threshold value related to a film thickness corresponding to the polishing end point. The grinding end point is described.

In a fifteenth aspect, a polishing method is employed in which a polishing method is performed between a polishing pad and an object to be polished disposed opposite to the polishing pad, and the method includes: maintaining the a step of polishing the pad; a step of rotationally driving the polishing table; a step of rotationally driving a holding portion for holding the object to be pressed and pressed against the polishing pad; and a vortex of the tenth mode disposed inside the polishing table a current detector, wherein the detecting coil detects a eddy current formed by the inner coil and the outer coil in the object to be polished by the rotation of the polishing table; The eddy current detection step indicates a polishing end point of the end of the polishing of the object to be polished.

The polishing method according to the fifteenth aspect, characterized in that the intensity of a magnetic field generated by the inner coil and/or the outer coil is changed when the conductivity of the object to be polished changes.

The polishing method according to the fifteenth or sixteenth aspect, wherein the plurality of eddy current type detectors according to the tenth aspect, wherein the plurality of eddy current types are arranged inside the polishing table The detection sensitivities of the detectors are different from each other.

In the eighteenth aspect, a computer-readable recording medium having a program for causing a computer to function as an end point detecting means and a control means for controlling the object to be polished is recorded. a polishing apparatus for polishing, the polishing apparatus having: a polishing table, a polishing pad for polishing the object to be polished; and a driving portion capable of driving the polishing table to rotate; and a holding portion The holding portion is capable of holding the object to be polished and pressing the polishing pad; the eddy current type detector according to the tenth aspect, wherein the eddy current type detector is disposed inside the polishing table, The detecting coil detects an eddy current formed by the inner coil and the outer coil in the object to be polished in accordance with the rotation of the polishing table, and the end point detecting unit means is capable of detecting the The eddy current detection indicates the end of the polishing of the end of the polishing of the object to be polished, and the control means controls the polishing by the polishing device.

The polishing apparatus according to any one of the eleventh aspect, wherein the polishing apparatus comprises: an optical system, wherein the optical system is provided on the polishing pad a through hole, the optical fiber is irradiated with light to the surface to be polished of the object to be polished, and the reflected light reflected by the optical fiber is received by the optical fiber; and the film thickness monitoring device for the object to be polished is set by the film thickness monitoring device There is an analysis processing means for analyzing the reflected light received by the optical system, and the reflected light is analyzed by the analysis processing means, and the polishing progress of the thin film formed on the surface to be polished of the object to be polished is monitored. The polishing apparatus is provided with a liquid supply hole for supplying a transparent liquid to a through hole provided in the polishing pad, and the liquid supply hole is disposed to allow a transparent liquid supplied from the liquid supply hole to be formed relative to the liquid a flow that is perpendicular to the surface to be polished of the object to be polished and fills the through hole, and the optical fiber is disposed to allow the irradiated light and the reflected light to pass through a portion of the flow that travels perpendicularly to the surface to be polished. a liquid discharge hole provided with a transparent liquid for discharging the through hole, the liquid discharge hole being located rearward of a moving direction of the polishing table with respect to the liquid supply hole, and the said hole in the through hole The end face on the opposite side of the abrasive is open.

According to a ninth aspect, the polishing apparatus according to the ninth aspect, wherein a midpoint of a line segment connecting a center of the liquid supply hole and a center of the liquid discharge hole is located at a position higher than a center point of the through hole In front of the moving direction of the polishing table.

The polishing apparatus according to the twenty-first aspect, wherein the through hole has a substantially elliptical cross section, and the outer circumference of the end surface surrounds the liquid supply hole and the liquid discharge hole. End face.

The polishing apparatus according to any one of the nineteenth aspect, wherein the forced draining mechanism is provided, and the forced draining mechanism forcibly discharges the liquid from the drain hole.

The polishing method according to any one of the fifteenth aspect, wherein the light-transmitting liquid nozzle and the light-transmitting liquid nozzle are disposed on an outer peripheral portion of the light-transmitting liquid nozzle. The light-transmitting liquid receiving portion abuts the column-shaped light-transmitting liquid flow from the light-transmitting liquid nozzle against the surface to be polished of the object to be polished, and receives the light-transmitting liquid flow by the light-transmitting liquid receiving portion. Forming a light-transmitting liquid flow in a state in which the light-transmitting liquid in the light-transmitting liquid nozzle communicates with the light-transmitting liquid in the light-transmitting liquid receiving portion and is sealed from the outside, and passes through the light-transmitting liquid flow through the optical system Irradiating light to the surface to be polished of the object to be polished, and receiving, by the optical system, reflected light reflected by the surface of the object to be polished by the light-transmitting liquid, and measuring the intensity of the reflected light from the received light The film thickness of the surface to be polished.

A polishing method according to the twenty-fourth aspect, wherein the optical system has at least one optical fiber, and a tip end portion of the optical fiber is inserted into the light-transmitting liquid stream, and the optical fiber and the light-transmitting liquid flow are passed through The light is irradiated onto the surface to be polished of the object to be polished, and the reflected light reflected by the surface to be polished is received by the light-transmitting liquid stream and the optical fiber.

The polishing apparatus according to any one of the eleventh aspect, wherein the processing apparatus is implemented in a plurality of processing areas and a transportation area, wherein the processing area is implemented. The plurality of processing units for shading processing are housed inside and below, and the transport area is housed inside the transporter, and is disposed between the processing regions, and is shielded by a light-shielding wall between the processing region and the transporting region. The front surface of the transport area is shielded by a maintenance door, and the processing unit is coupled to the light shielding wall in a light blocking state.

The polishing apparatus according to the twenty-fifth aspect, wherein the processing unit is provided with a substrate insertion opening having a shutter that is openable and closable, and the light shielding wall is provided with the insertion opening around the object to be polished. The surrounding light shielding film is provided with an opening in a region where the light shielding wall is surrounded by the light shielding film.

The polishing apparatus according to the twenty-fifth aspect, wherein the processing area is a cleaning area, and the treatment of the object to be polished is cleaning of the object to be polished.

The polishing apparatus according to any one of the eleventh aspect to the fourteenth aspect, wherein the polishing apparatus according to any one of the twenty-first aspect to the twenty-second aspect, wherein the polishing apparatus has a polishing portion that polishes the object to be polished; a cleaning portion that cleans and dries the object to be polished; a partition wall that separates the polishing portion from the cleaning portion; and an opening through the partition wall a conveyance mechanism that conveys the object to be polished from the polishing unit to the cleaning unit after polishing; and a housing that has a side wall and houses the polishing unit, the cleaning unit, and the transport mechanism therein, The cleaning unit includes: a cleaning means for cleaning the polished object after the polishing by the cleaning liquid; a drying means for drying the object to be polished after washing; and a levelable and freely movable between the cleaning means and the drying means The conveyance means for transferring the object to be polished, wherein the polishing portion includes the polishing table, the holding portion, the driving portion, the eddy current type detector, and the end point detecting portion. In addition, U.S. Patent No. 5,885,138 is incorporated herein by reference in its entirety.

The polishing method according to any one of the items 15 to 17, 23, and 24, characterized in that in the polishing method using the polishing apparatus, the polishing apparatus has: a polishing portion that polishes the object to be polished; a cleaning portion that cleans and dries the object to be polished; a partition wall that separates the polishing portion from the cleaning portion; and a polished portion through an opening of the partition wall a conveyance unit that conveys the object to be polished from the polishing unit to the cleaning unit; and a casing that has a side wall and houses the polishing unit, the cleaning unit, and the conveyance unit therein, and the cleaning unit The object to be polished after the polishing is washed with a cleaning liquid to dry the object to be polished after washing, and the object to be polished is transferred horizontally and freely between the cleaning step and the drying step. And transporting the object to be polished.

According to the ninth aspect, the polishing apparatus according to any one of the eleventh aspect to the fourteenth aspect, and the twenty-fifth aspect to the twenty-second aspect, and the twenty-second aspect to the twenty-eighth aspect, An optical detector that measures the intensity of the reflected light from the object to be polished, based on the eddy current and the intensity of the reflected light from the object to be polished measured by the optical detector, A polishing end point indicating the end of the grinding is detected.

The polishing apparatus according to the thirty-first aspect, characterized in that the polishing apparatus according to the thirty-first aspect has a window that can be placed in the polishing table at a position opposite to the object to be polished during polishing, and is located at a lower portion of the window. The optical detector is configured.

The polishing apparatus according to the thirty-fifth aspect, wherein the polishing table has an opening that is disposed at a position in the polishing table that is opposite to the object to be polished during polishing, An optical detector is disposed at a lower portion of the window, and the optical detector has a fluid supply portion that supplies a fluid for cleaning into the opening.

In the 33rd aspect, the polishing apparatus according to any one of the eleventh aspect to the fourteenth aspect, the nineteenth aspect to the twenty-second aspect, the twenty-fifth aspect to the twenty-eighth aspect, and the thirty-eighth aspect to the thirty-second aspect. The eddy current detector generates a magnetic field in the object to be polished, and detects the intensity of the generated magnetic field. In addition, the polishing device has: a second motor for rotationally driving the holding portion; a swing arm for holding the holding portion; a third motor for swinging the swing arm about a swing center on the swing arm; detecting the drive portion (first motor) and the second motor, a current value of one of the third motors and/or a torque command value of the one motor to generate a first output detecting portion based on the first output and the eddy current detector The intensity of the magnetic field is measured, and the end point of the polishing indicating the end of the polishing is detected.

In the 34th aspect, a program for causing a computer to function as an end point detecting portion means for controlling the grinding of the object to be polished, and a control means for holding the object to be held a holding portion for polishing the object; a swing arm for holding the holding portion; and an arm torque detecting portion for directly or indirectly detecting an arm torque applied to the swing arm, the end point detecting portion means based on the arm The arm torque detected by the torque detecting unit detects an end point of the polishing indicating the end of the polishing, and the control means controls the polishing of the polishing apparatus.

The 35th aspect is the program according to the 34th aspect, characterized in that the program can be updated.

In a thirty-sixth aspect, a polishing apparatus comprising: a substrate processing apparatus that polishes a substrate and obtains a signal related to polishing; and a data processing apparatus connected by the substrate processing apparatus and the communication means, the data The processing device updates the parameters related to the grinding process based on the signals acquired by the substrate processing device. Here, the signal is analog signal and/or digital signal.

Here, as the polishing parameters, for example, (1) the pressing force of the four regions of the semiconductor wafer, that is, the central portion, the inner intermediate portion, the outer intermediate portion, and the peripheral portion, (2) the polishing time, (3) The rotation speed of the polishing table and the top ring, (4) is used to determine the threshold value of the polishing end point and the like. The update of the parameters refers to the update of the above parameters.

In a 37th aspect, the polishing apparatus according to the 36th aspect, wherein the signal is obtained by a detector or a plurality of detectors of different types. As the detectors of different types used in the present embodiment, there are the following detectors and the like. That is, (1) a detector that acquires a measurement signal related to a torque fluctuation of the swing shaft motor, (2) an SOPM (optical detector), (3) an eddy current detector, and (4) acquisition and rotation of the polishing table. A detector for the measurement signal associated with the motor current variation of the motor.

In a 38th aspect, a polishing method is provided, comprising: a step of connecting a substrate processing apparatus and a data processing apparatus by a communication unit; a step of polishing the substrate by the substrate processing apparatus to obtain a signal related to polishing; and borrowing The data processing device updates the parameters related to the polishing process based on the signals acquired by the substrate processing device.

In a thirty-first aspect, a polishing apparatus comprising a substrate processing apparatus, an intermediate processing apparatus, and a data processing apparatus for polishing a substrate and obtaining a signal related to polishing, wherein the substrate processing apparatus and the intermediate processing apparatus are provided a communication means is connected, the intermediate processing device and the data processing device are connected by a second communication means, and the intermediate processing device creates a data group related to the polishing process based on the signal obtained by the substrate processing device, the data processing device is based on The data set monitors a state of the polishing process of the substrate processing apparatus, and the intermediate processing apparatus or the data processing apparatus detects a polishing end point indicating the end of the polishing based on the data set.

In the 40th aspect, the polishing apparatus may be employed, characterized in that the signal in the 39th mode is obtained by a detector or a plurality of detectors of different types. As the detectors of different types used in the present embodiment, there are the following detectors and the like. That is, (1) a detector that acquires a measurement signal related to a torque fluctuation of the swing shaft motor, (2) an SOPM (optical detector), (3) an eddy current detector, and (4) acquisition and rotation of the polishing table. A detector for the measurement signal associated with the motor current variation of the motor.

In the 41st aspect, in the 39th aspect, as an example of the material group, the following data group is available. The detector signal output by the detector and the required control parameters can be used as a data set. That is, the data set can include: the top ring presses the semiconductor wafer, the current of the swing axis motor, the motor current of the polishing table, the measurement signal of the optical detector, the measurement signal of the eddy current detector, and the top ring on the polishing pad. The position, the flow rate/type of the slurry and the liquid medicine, and the related calculation data of the above information.

In the forty-second aspect, in the thirty-ninth aspect, the following is an example of the method of transmitting the data group. The transmission can be performed using a transmission system that transmits one-dimensional data in parallel or a transmission system that sequentially transmits one-dimensional data. In addition, the above-described one-dimensional data can be processed into two-dimensional data as a data group.

In the thirteenth aspect, in the thirty-ninth aspect, the polishing parameter can be updated by extracting a signal having a large fluctuation in the signal value. As a method of updating the polishing parameters, for example, there are the following methods. The influence ratio of the main detector to the sub detector is specified by setting a priority proportional coefficient (weighting coefficient) at a target value of both the main detector and the sub detector. The signal with a large change in the signal value is extracted to update the priority ratio coefficient. In addition, in the fluctuation of the signal value, there is a change only in a short time and a long time. In addition, the change of the signal value refers to a time value-related differential value or a time-dependent difference value of the signal value.

In a 44th aspect, a polishing method is provided, comprising: a step of connecting a substrate processing apparatus and an intermediate processing apparatus for polishing a substrate to obtain a signal related to polishing by a first communication means; and the second communication a step of connecting the intermediate processing device and the data processing device; the intermediate processing device creating a data set related to the polishing process based on the signal acquired by the substrate processing device; the data processing device monitoring based on the data group a step of a state of the polishing process of the substrate processing apparatus; and a step of detecting, by the intermediate processing device or the data processing device, a polishing end point indicating the end of the polishing based on the data set.

In a 45th aspect, a polishing method is used for polishing between a polishing pad and an object to be polished disposed opposite to the polishing pad, characterized by comprising: a step of holding the polishing pad by a polishing table; a step of rotationally driving the polishing table; a step of rotationally driving a holding portion for holding the object to be polished and pressed against the polishing pad; and an eddy current type detector according to the tenth aspect of the polishing table a step of detecting an eddy current formed in the object to be polished by the detecting coil by at least one of the first step, the second step, and the third step, along with the rotation of the polishing table, the first step The eddy current formed by the inner coil on the object to be polished is detected by the detecting coil, and the second step is performed by the detecting coil to detect that the object is formed on the object to be polished by the outer coil An eddy current, the third step of detecting, by the detecting coil, an eddy current formed by the inner coil and the outer coil on the object to be polished; The eddy current detection is a step of indicating the end of the polishing of the end of the polishing of the object to be polished.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or corresponding components are designated by the same reference numerals, and the description thereof will not be repeated. Further, the features shown in the respective embodiments can be applied to other embodiments without being contradictory.

1 is a plan view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus has a casing portion, that is, a casing 61 having a substantially rectangular shape in the present embodiment. The housing 61 has a side wall 700. The inside of the casing 61 is divided into a loading/unloading portion 62, a polishing portion 63, and a cleaning portion 64 by partition walls 1a, 1b. The loading/unloading unit 62, the polishing unit 63, and the cleaning unit 64 are separately assembled and independently exhausted. Further, the substrate processing apparatus has a control unit 65 that controls the substrate processing operation.

The loading/unloading unit 62 has two or more (four in the present embodiment) front loading unit 20 on which a wafer cassette storing a large number of semiconductor wafers (substrates) is placed. These front loading portions 20 are disposed adjacent to the casing 61 and arranged along the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus. The front loading unit 20 can be equipped with an open box, a SMIF (Standard Manufacturing Interface) box, or a FOUP (Front Opening Unified Tank). Here, the SMIF and the FOUP are sealed containers in which the wafer cassette is housed inside and covered with a partition wall to ensure an environment independent of the external space.

Further, in the loading/unloading unit 62, the traveling mechanism 21 is placed along the arrangement of the front loading unit 20. The traveling mechanism 21 is provided with two transport robots (loaders) 22 that are movable in the arrangement direction of the wafer cassette. The transport robot 22 can access the wafer cassette mounted on the front loading unit 20 by moving on the travel mechanism 21 . Each of the transport robots 22 has two robots on the upper and lower sides. The upper robot is used when returning the processed semiconductor wafer to the wafer cassette. The lower robot is used when the semiconductor wafer before processing is taken out from the wafer cassette. In this way, the upper and lower robots are used separately. Further, the robot on the lower side of the transport robot 22 can rotate the semiconductor wafer by rotating around its axis.

The loading/unloading portion 62 is an area that needs to be kept in the cleanest state. Therefore, the internal normal state of the loading/unloading portion 62 is maintained at a higher pressure than any of the substrate processing apparatus, the polishing unit 63, and the cleaning unit 64. The polishing portion 63 is the dirtiest region because the slurry is used as the polishing liquid. Therefore, a negative pressure is formed inside the polishing portion 63, and the pressure is maintained lower than the internal pressure of the cleaning portion 64. The loading/unloading unit 62 is provided with a filter fan unit (not shown) having an air cleaning filter such as a HEPA filter, a ULPA filter, or a chemical filter. From the filter fan unit, clean air is removed from the particles or toxic vapors and toxic gases.

The polishing unit 63 is a region for polishing (planarizing) the semiconductor wafer, and includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. As shown in FIG. 1, the first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D are arranged along the longitudinal direction of the substrate processing apparatus.

As shown in FIG. 1, the first polishing unit 3A has a polishing table 30A, a top ring 31A, a polishing liquid supply nozzle 32A, a dresser 33A, and a sprayer 34A. A polishing pad 10 having a polishing surface is attached to the polishing table 30A. The top ring (holding portion) 31A holds the semiconductor wafer and polishes the semiconductor wafer while pressing it onto the polishing pad 10 on the polishing table 30A. The polishing liquid supply nozzle 32A supplies a polishing liquid, a conditioning liquid (for example, pure water) to the polishing pad 10. The dresser 33A performs trimming of the polishing surface of the polishing pad 10. The atomizer 34A sprays a mixed fluid or a liquid (for example, pure water) of a liquid (for example, pure water) with a gas (for example, nitrogen) and sprays it onto the polishing surface.

Similarly, the second polishing unit 3B has a polishing table 30B to which the polishing pad 10 is attached, a top ring 31B, a polishing liquid supply nozzle 32B, a dresser 33B, and a sprayer 34B. The third polishing unit 3C has a polishing table 30C to which the polishing pad 10 is attached, a top ring 31C, a polishing liquid supply nozzle 32C, a dresser 33C, and a sprayer 34C. The fourth polishing unit 3D has a polishing table 30D to which the polishing pad 10 is attached, a top ring 31D, a polishing liquid supply nozzle 32D, a dresser 33D, and a sprayer 34D.

The first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D have the same structure as each other, and therefore the details of the polishing unit will be described below with reference to the first polishing unit 3A.

FIG. 2 is a perspective view schematically showing the first polishing unit 3A. The top ring 31A is supported by the top ring shaft 111. A polishing pad 10 is attached to the upper surface of the polishing table 30A, and the upper surface of the polishing pad 10 constitutes a polishing surface for polishing the semiconductor wafer 16. Further, the abrasive pad 10 can be replaced with a fixed abrasive grain. The top ring 31A and the polishing table 30A are configured to rotate about their axes as indicated by the arrows. The semiconductor wafer 16 is held on the lower surface of the top ring 31A by vacuum suction. At the time of polishing, the polishing liquid is supplied from the polishing liquid supply nozzle 32A to the polishing surface of the polishing pad 10, and the semiconductor wafer 16 to be polished is pressed by the top ring 31A to be polished on the polishing surface.

Fig. 3 is a cross-sectional view schematically showing the structure of the top ring 31A. The top ring 31A is coupled to the lower end of the top ring shaft 111 via a universal joint 637. The universal joint 637 is a ball joint that allows both the tilting movement of the top ring 31A and the top ring shaft 111 and the rotation of the top ring shaft 111 to the top ring 31A. The top ring 31A has a substantially disk-shaped top ring main body 638 and a retaining ring 640 disposed at a lower portion of the top ring main body 638. The top ring main body 638 is formed of a material having high strength and rigidity such as metal or ceramic. Further, the retaining ring 640 is formed of a highly rigid resin material, ceramics, or the like. Further, the retaining ring 640 may be integrally formed with the top ring main body 638.

A circular elastic pad 642 that is in contact with the semiconductor wafer 16 , an annular pressing piece 643 made of an elastic film, and an elastic pad are housed in a space formed inside the top ring main body 638 and the retaining ring 640 . A substantially disc-shaped splint 644 of 642. The upper end portion of the elastic pad 642 is held by the clamp 644, and four pressure chambers (air bags) P1, P2, P3, and P4 are provided between the elastic pad 642 and the clamp 644. The pressure chambers P1, P2, P3, and P4 are formed by the elastic pads 642 and the clamp plates 644. The pressure chambers P1, P2, P3, and P4 are supplied with pressurized fluid such as pressurized air via the fluid paths 651, 652, 653, and 654, respectively, or the pressure chambers P1, P2, P3, and P4 are evacuated. The central pressure chamber P1 is circular, and the other pressure chambers P2, P3, and P4 are annular. These pressure chambers P1, P2, P3, P4 are arranged concentrically.

The pressure adjusting unit described later can change the internal pressures of the pressure chambers P1, P2, P3, and P4 independently of each other, thereby independently adjusting the four regions of the semiconductor wafer 16, that is, the central portion and the inner intermediate portion. , the outer middle portion, and the pressing force of the peripheral portion. Further, by raising and lowering the entire top ring 31A, it becomes possible to press the retaining ring 640 to the polishing pad 10 with a predetermined pressing force. A pressure chamber P5 is formed between the clamp plate 644 and the top ring main body 638, and the pressure chamber P5 is supplied with pressurized fluid via the fluid path 655, or the pressure chamber P5 is evacuated. Thereby, the entire plate 644 and the elastic pad 642 can move in the up and down direction.

The peripheral end portion of the semiconductor wafer 16 is surrounded by the retaining ring 640 so that the semiconductor wafer 16 does not fly out of the top ring 31A during polishing. An opening (not shown) is formed in a portion of the elastic pad 642 constituting the pressure chamber P3, and the semiconductor wafer 16 is suction-held by the top ring 31A by forming a vacuum in the pressure chamber P3. Further, the semiconductor wafer 16 is released from the top ring 31A by supplying nitrogen gas, dry air, compressed air or the like to the pressure chamber P3.

Fig. 4 is a cross-sectional view schematically showing another configuration example of the top ring 31A. In this example, the elastic pad 642 is attached to the lower surface of the top ring main body 638 without providing a splint. In addition, the pressure chamber P5 between the splint and the top ring main body 638 is also not provided. Instead, an elastic bag 646 is disposed between the retaining ring 640 and the top ring main body 638, and a pressure chamber P6 is formed inside the elastic bag 646. The retaining ring 640 is relatively movable up and down relative to the top ring body 638. A fluid path 656 is communicated in the pressure chamber P6 to supply pressurized fluid such as pressurized air to the pressure chamber P6 through the fluid path 656. The internal pressure of the pressure chamber P6 can be adjusted by a pressure adjusting unit to be described later. Therefore, the pressing force of the retaining ring 640 with respect to the polishing pad 10 can be adjusted independently of the pressing force on the semiconductor wafer 16. Other structures and operations are the same as those of the top ring shown in FIG. In the present embodiment, a top ring of any type of FIG. 3 or FIG. 4 can be used.

Fig. 5 is a cross-sectional view for explaining a mechanism for rotating and swinging the top ring 31A. A top ring shaft (for example, a spline shaft) 111 is rotatably supported by the top ring head 660. Further, the top ring shaft 111 is coupled to the rotation shaft of the motor M1 via the pulleys 661 and 662 and the belt 663, and the top ring shaft 111 and the top ring 31A are rotated about the axis thereof by the motor M1. The motor M1 is mounted on the upper portion of the top ring head 660. Further, the top ring head 660 and the top ring shaft 111 are coupled by a cylinder 665 as a vertical driving source. The top ring shaft 111 and the top ring 31A integrally move up and down by the air (compressed gas) supplied to the cylinder 665. Further, instead of the cylinder 665, a mechanism having a ball screw and a servo motor may be used as an up-and-down driving source.

The top ring head 660 is rotatably supported by the support shaft 667 via a bearing 672. The support shaft 667 is a fixed shaft and has a non-rotating configuration. The top ring head 660 is provided with a motor M2, and the relative position of the top ring head 660 and the motor M2 is fixed. The rotation shaft of the motor M2 is coupled to the support shaft 667 via a rotation transmission mechanism (such as a gear) (not shown), and the top ring head 660 is swung (centered) around the support shaft 667 by rotating the motor M2. Therefore, by the swinging motion of the top ring head 660, the top ring 31A supported at the front end thereof moves between the polishing position above the polishing table 30A and the side conveyance position of the polishing table 30A. Further, in the present embodiment, the swing mechanism that swings the top ring 31A is constituted by the motor M2.

A through hole (not shown) extending in the longitudinal direction is formed inside the top ring shaft 111. The fluid paths 651, 652, 653, 654, 655, and 656 of the top ring 31A are connected to the rotary joint 669 provided at the upper end of the top ring shaft 111 through the through holes. A fluid such as pressurized gas (clean air) or nitrogen gas is supplied to the top ring 31A via the rotary joint 669, and the gas is vacuum-exhausted from the top ring 31A. A plurality of fluid tubes 670 communicating with the fluid paths 651, 652, 653, 654, 655, and 656 (see FIGS. 3 and 4) are connected to the rotary joint 669, and these fluid tubes 670 are connected to the pressure adjusting portion 675. Further, a fluid pipe 671 that supplies pressurized air to the cylinder 665 is also connected to the pressure adjusting portion 675.

The pressure adjusting unit 675 includes an electric regulator that adjusts the pressure of the fluid supplied to the top ring 31A, a pipe that is connected to the fluid pipes 670 and 671, a pneumatic valve provided in the pipes, and a working source that constitutes the pneumatic valves. An electric regulator that adjusts the pressure of the air, an ejector that forms a vacuum in the top ring 31A, and the like are assembled to form one block (unit). The pressure adjusting portion 675 is fixed to the upper portion of the top ring head 660. The pressure of the pressurized gas supplied to the pressure chambers P1, P2, P3, P4, and P5 (see FIG. 3) of the top ring 31A and the pressurized air supplied to the cylinder 665 is adjusted by the electric regulator of the pressure adjusting unit 675. Similarly, a vacuum is formed in the pressure chamber P5 between the pressure plate P1, P2, P3, and P4 of the top ring 31A and the pressure chamber P5 between the clamp 644 and the top ring main body 638 by the ejector of the pressure adjusting portion 675.

In this way, since the electric regulator and the valve as the pressure adjusting device are disposed in the vicinity of the top ring 31A, the controllability of the pressure in the top ring 31A is improved. More specifically, since the distance between the electric regulator and the pressure chambers P1, P2, P3, P4, and P5 is short, the responsiveness to the pressure change command from the control unit 65 is improved. Also, since the ejector as a vacuum source is also disposed in the vicinity of the top ring 31A, the responsiveness is increased when a vacuum is formed in the top ring 31A. In addition, the back surface of the pressure adjustment unit 675 can be used as a mounting pedestal of the electrical equipment, and the frame for mounting which has been conventionally required can be eliminated.

The top ring head 660, the top ring 31A, the pressure adjusting portion 675, the top ring shaft 111, the motor M1, the motor M2, and the cylinder 665 are configured as one module (hereinafter referred to as a top ring assembly). That is, the top ring shaft 111, the motor M1, the motor M2, the pressure adjusting portion 675, and the cylinder 665 are attached to the top ring head 660. The top ring head 660 is configured to be detachable from the support shaft 667. Therefore, the top ring assembly can be detached from the substrate processing apparatus by separating the top ring head 660 from the support shaft 667. With the structure as described above, the maintainability of the support shaft 667, the top ring head 660, and the like can be improved. For example, when an abnormal noise is generated from the bearing 672, the bearing 672 can be easily replaced, and when the motor M2 and the rotation transmission mechanism (reducer) are replaced, it is not necessary to disassemble the adjacent equipment.

Fig. 6 is a cross-sectional view schematically showing the internal structure of the polishing table 30A. As shown in FIG. 6, a detector 676 that detects the state of the film of the semiconductor wafer 16 is buried inside the polishing table 30A. In this example, an eddy current detector is used as the detector 676. The signal of the detector 676 is sent to the control unit 65, and the monitoring signal indicating the film thickness is generated by the control unit 65. The value of the monitoring signal (and the detector signal) does not indicate the film thickness itself, but the value of the monitoring signal varies depending on the film thickness. Therefore, the monitor signal is a signal capable of indicating the film thickness of the semiconductor wafer 16.

The control unit 65 determines the internal pressure of each of the pressure chambers P1, P2, P3, and P4 based on the monitoring signal, and outputs a command to the pressure adjusting unit 675 to cause the determined internal pressure to be formed in each of the pressure chambers P1, P2, P3, and P4. The control unit 65 functions as a pressure control unit that operates the internal pressure of each of the pressure chambers P1, P2, P3, and P4 based on the monitoring signal, and an end point detection unit that detects the polishing end point.

Similarly to the first polishing unit 3A, the detector 676 is also provided in the polishing stations of the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D. The control unit 65 generates a monitor signal from the signal sent from the detectors 676 of the respective polishing units 3A to 3D, and monitors the progress of the polishing of the semiconductor wafer in each of the polishing units 3A to 3D. When a plurality of semiconductor wafers are polished by the polishing units 3A to 3D, the control unit 5 monitors the monitoring signals indicating the film thickness of the semiconductor wafer during polishing, and controls the pressing forces of the top rings 31A to 31D based on the monitoring signals. The polishing time in the polishing units 3A to 3D is made substantially the same. In this manner, the polishing time in the polishing units 3A to 3D can be averaged by adjusting the pressing force of the top rings 31A to 31D in the polishing based on the monitoring signal.

It is also possible to continuously polish the semiconductor crystal by any one of the first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, the fourth polishing unit 3D, or a plurality of polishing units previously selected from the polishing units 3A to 3D. Round 16. For example, the semiconductor wafer 16 may be polished in the order of the first polishing unit 3A → the second polishing unit 3B, or the semiconductor wafer 16 may be polished in the order of the third polishing unit 3C → the fourth polishing unit 3D. Further, the semiconductor wafer 16 may be polished in the order of the first polishing unit 3A → the second polishing unit 3B → the third polishing unit 3C → the fourth polishing unit 3D. In either case, the output can be improved in such a manner that all the polishing times of the polishing units 3A to 3D are averaged.

The eddy current type detector is suitably used in the case where the film of the semiconductor wafer is a metal film. When the film of the semiconductor wafer is a translucent film such as an oxide film, an optical detector can be used as the detector 676. Alternatively, a microwave detector can also be used as the detector 676. The microwave detector can be used in any case of a metal film as well as a non-metal film. Hereinafter, an example of an optical detector and a microwave detector will be described.

Fig. 7 is a schematic view showing a polishing table having an optical detector. As shown in FIG. 7, an optical detector 676 that detects the state of the film of the semiconductor wafer 16 is embedded in the polishing table 30A. The detector 676 irradiates light onto the semiconductor wafer 16 and detects the state (film thickness, etc.) of the film of the semiconductor wafer 16 from the intensity (reflection intensity or reflectance) of the reflected light from the semiconductor wafer 16.

Further, a light transmitting portion 677 for penetrating light from the detector 676 is attached to the polishing pad 10. The light transmitting portion 677 is formed of a material having a high transmittance, and is formed of, for example, non-foamed polyurethane. Alternatively, a through hole may be formed in the polishing pad 10, and the transparent liquid may flow from below while the through hole is blocked by the semiconductor wafer 16, thereby forming the light transmitting portion 677. The light transmitting portion 677 is disposed at a position of the center of the semiconductor wafer 16 held by the top ring 31A.

As shown in FIG. 7, the detector 676 includes a light source 678a, an illuminating fiber 678b as a light-emitting portion that irradiates light from the light source 678a to the surface to be polished of the semiconductor wafer 16, and receives light reflected from the surface to be polished. a light-receiving optical fiber 678c of the optical portion; a spectroscope having a light splitter that splits the light received by the light-receiving fiber 678c; and a splitter unit 678d that stores a plurality of light-receiving elements that are separated by the splitter as electrical information; The operation control unit 678e that lights up and turns off the light source 678a, the time when the light-receiving element in the spectroscope unit 678d starts reading, and the power supply 678f that supplies power to the operation control unit 678e. Further, electric power is supplied to the light source 678a and the spectroscope unit 678d via the operation control unit 678e.

The light-emitting end of the light-emitting fiber 678b and the light-receiving end of the light-receiving fiber 678c are formed to be substantially perpendicular to the surface to be polished of the semiconductor wafer 16. As the light-receiving element in the spectroscope unit 678d, for example, a 128-element photodiode array can be used. The spectroscope unit 678d is connected to the operation control unit 678e. Information from the light-receiving element in the spectroscope unit 678d is sent to the operation control unit 678e, and spectral data of the reflected light is generated based on the information. That is, the operation control unit 678e reads the electrical information stored in the light-receiving element to generate spectral data of the reflected light. This spectral data indicates the intensity of the reflected light that is decomposed according to the wavelength, and varies depending on the film thickness.

The operation control unit 678e is connected to the control unit 65. In this way, the spectral data generated by the motion control unit 678e is transmitted to the control unit 65. The control unit 65 calculates a characteristic value associated with the film thickness of the semiconductor wafer 16 based on the spectral data received from the operation control unit 678e, and uses it as a monitoring signal.

Fig. 8 is a schematic view showing a polishing table having a microwave detector. The detector 676 includes an antenna 680a that irradiates microwaves onto the surface to be polished of the semiconductor wafer 16, a detector body 680b that supplies microwaves to the antenna 680a, and a waveguide 681 that connects the antenna 680a and the detector body 680b. The antenna 680a is disposed to be embedded in the polishing table 30A and opposed to the center position of the semiconductor wafer 16 held by the top ring 31A.

The detector body 680b has a microwave source 680c that generates microwaves to supply microwaves to the antenna 680a, and separates microwaves (incident waves) generated by the microwave source 680c from microwaves (reflected waves) reflected from the surface of the semiconductor wafer 16. The separator 680d; and a detecting unit 680e that receives the reflected wave separated by the separator 680d and detects the amplitude and phase of the reflected wave. Further, as the separator 680d, a directional coupler is suitably used.

The antenna 680a is connected to the splitter 680d via a waveguide 681. The microwave source 680c is connected to the separator 680d, and the microwave generated by the microwave source 680c is supplied to the antenna 680a via the separator 680d and the waveguide 681. The microwaves are radiated from the antenna 680a to the semiconductor wafer 16, and penetrate (through) the polishing pad 10 to reach the semiconductor wafer 16. The reflected wave from the semiconductor wafer 16 again penetrates the polishing pad 10 and is received by the antenna 680a.

The reflected wave is sent from the antenna 680a to the splitter 680d via the waveguide 681, and the incident wave is separated from the reflected wave by the splitter 680d. The reflected wave separated by the separator 680d is sent to the detecting portion 680e. The amplitude and phase of the reflected wave are detected by the detecting unit 680e. The amplitude of the reflected wave is detected as electric power (dbm or W) or voltage (V), and the phase of the reflected wave is detected by a phase measuring device (not shown) built in the detecting unit 680e. The amplitude and phase of the reflected wave detected by the detecting unit 680e are sent to the control unit 65, where the film thickness of the metal film, the non-metal film, or the like of the semiconductor wafer 16 is analyzed based on the amplitude and phase of the reflected wave. The analyzed value is monitored by the control unit 65 as a monitoring signal.

Fig. 9 is a perspective view showing a dresser 33A which can be used as an embodiment of the present invention. As shown in Fig. 9, the dresser 33A has a dresser arm 685, a dressing member 686 rotatably attached to the front end of the dresser arm 685, and a swing shaft 688 coupled to the other end of the dresser arm 685; 688 is a motor 689 that drives a drive mechanism that swings (swings) the trimmer arm 685. The trimming member 686 has a rounded trim surface to which hard particles are fixed. Examples of the hard particles include diamond particles, ceramic particles, and the like. A motor (not shown) is built in the dresser arm 685, and the trimming member 686 is rotated by the motor. The swing shaft 688 is coupled to an elevating mechanism (not shown), and the trimming member 686 presses the polishing surface of the polishing pad 10 by the elevating mechanism lowering the dresser arm 685.

Fig. 10 (a) is a perspective view showing the atomizer 34A. The atomizer 34A has an arm 690 having one or a plurality of injection holes at a lower portion, a fluid flow path 691 coupled to the arm 690, and a swing shaft 694 of the support arm 690. FIG. 10(b) is a schematic view showing a lower portion of the arm 690. In the example shown in FIG. 10(b), a plurality of injection holes 690a are formed at equal intervals in the lower portion of the arm 690. The fluid flow path 691 can be constituted by a hose, a tube, or a combination of the above.

Fig. 11 (a) is a side view showing the internal structure of the atomizer 34A, and Fig. 11 (b) is a plan view showing the atomizer 34A. The opening end of the fluid flow path 691 is connected to a fluid supply pipe (not shown), and the fluid is supplied from the fluid supply pipe to the fluid flow path 691. As an example of the fluid to be used, a liquid (for example, pure water), a mixed fluid of a liquid and a gas (for example, a mixed fluid of pure water and nitrogen), or the like is exemplified. The fluid flow path 691 communicates with the injection hole 690a of the arm 690, and the fluid is sprayed and ejected from the injection hole 690a to the polishing surface of the polishing pad 10.

As shown by the broken lines in FIGS. 10( a ) and 11 ( b ), the arm 690 is rotatable between the washing position and the retracted position centering on the swing shaft 694 . The movable angle of the arm 690 is about 90°. Generally, as shown in FIG. 1, the arms 690 are located in the cleaning position and are disposed along the radial direction of the polishing surface of the polishing pad 10. At the time of maintenance such as replacement of the polishing pad 10, the arm 690 is manually moved to the retracted position. Therefore, it is not necessary to disassemble the arm 690 during maintenance, and maintenance performance can be improved. Further, the rotation mechanism may be coupled to the swing shaft 694, and the arm 690 may be rotated by the rotation mechanism.

As shown in Fig. 11(b), two reinforcing members 696, 696 having different shapes from each other are provided on both side faces of the arm 690. By providing these reinforcing members 696 and 696, when the arm 690 is rotated between the washing position and the retracted position, the axial center of the arm 690 does not largely vibrate, and the atomizing operation can be performed efficiently. In addition, the sprayer 34A has a rod 695 for fixing the pivoting position of the arm 690 (the angular range in which the arm 690 can be rotated). That is, the angle at which the arm 690 can be rotated can be adjusted in accordance with the condition by the operation lever 695. When the lever 695 is rotated, the arm 690 is free to rotate, and the arm 690 is manually moved between the cleaning position and the retracted position. Further, when the lever 695 is fastened, the position of the arm 690 is fixed at any position of the washing position and the retracted position.

The arm 690 of the nebulizer can also be constructed in a foldable configuration. In particular, the arm 690 can also be constructed from at least two arm members that are coupled by a joint. In this case, the angle between the arm members at the time of folding is 1° or more and 45° or less, and preferably 5° or more and 30° or less. When the angle formed by the arm members is larger than 45°, the space occupied by the arms 690 is large, and when it is less than 1°, the width of the thin arms 690 is reduced, and the mechanical strength is lowered. In this example, the arm 690 can also be configured to not rotate about the swing axis 694. When the polishing pad 10 is replaced or the like, the arm 690 can be folded to prevent the sprayer from interfering with the maintenance work. As another modification, the arm 690 of the sprayer can be made to expand and contract. In this example, the sprayer is thus not obstructed by shortening the arm 690 during maintenance.

The atomizer 34A is provided for the purpose of rinsing abrasive grains, abrasive grains, and the like remaining on the polishing surface of the polishing pad 10 by a high-pressure fluid. By the cleaning of the polishing surface by the fluid pressure of the atomizer 34A and the mechanical contact of the dressing operation of the polishing surface by the dresser 33A, it is possible to achieve better finishing, that is, regeneration of the polishing surface. Usually, after trimming by a contact type dresser (diamond dresser or the like), the polishing surface is often regenerated by a sprayer.

Next, a transport mechanism for transporting a semiconductor wafer will be described with reference to FIG. 1 . The transport mechanism includes a lifter 11, a first linear transport device 66, a swing transport device 12, a second linear transport device 67, and a temporary storage station 180.

The lifter 11 receives the semiconductor wafer from the transport robot 22. The first linear transport device 66 transports the semiconductor wafer received from the lifter 11 between the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4. The first polishing unit 3A and the second polishing unit 3B receive and polish the semiconductor wafer from the first linear transfer device 66. The first polishing unit 3A and the second polishing unit 3B deliver the ground semiconductor wafer to the first linear transfer device 66.

The wobble transfer device 12 performs the transfer of the semiconductor wafer between the first linear transfer device 66 and the second linear transfer device 67. The second linear transfer device 67 transports the semiconductor wafer received from the wobble transfer device 12 between the fifth transfer position TP5, the sixth transfer position TP6, and the seventh transfer position TP7. The third polishing unit 3C and the fourth polishing unit 3D receive and polish the semiconductor wafer from the second linear transfer device 67. The third polishing unit 3C and the fourth polishing unit 3D deliver the ground semiconductor wafer to the second linear transfer device 67. The semiconductor wafer subjected to the polishing process by the polishing unit 3 is placed on the temporary stage 180 by the wobble transfer device 12.

Fig. 12 (a) is a plan view showing the cleaning unit 64, and Fig. 12 (b) is a side view showing the cleaning unit 64. As shown in FIGS. 12( a ) and 12 ( b ), the cleaning unit 64 is divided into a first cleaning chamber 190 , a first transfer chamber 191 , a second cleaning chamber 192 , a second transfer chamber 193 , and a drying chamber 194 . In the first cleaning chamber 190, an upper primary cleaning module 201A and a lower primary cleaning module 201B arranged in the longitudinal direction are disposed. The upper primary cleaning module 201A is disposed above the lower primary cleaning module 201B. Similarly, an upper secondary cleaning module 202A and a lower secondary cleaning module 202B arranged in the longitudinal direction are disposed in the second cleaning chamber 192. The upper secondary cleaning module 202A is disposed above the lower secondary cleaning module 202B. The primary and secondary cleaning modules 201A, 201B, 202A, and 202B are cleaning machines for cleaning semiconductor wafers using a cleaning liquid. Since the primary and secondary cleaning modules 201A, 201B, 202A, and 202B are arranged in the vertical direction, there is an advantage that the occupied area is small.

A temporary storage stage 203 of a semiconductor wafer is provided between the upper secondary cleaning element 202A and the lower secondary cleaning element 202B. An upper drying module 205A and a lower drying module 205B which are arranged in the longitudinal direction are disposed in the drying chamber 194. The upper drying module 205A and the lower drying module 205B are isolated from each other. Filter fan units 207 and 207 that supply clean air to the dry modules 205A and 205B are provided in the upper portion of the upper drying module 205A and the lower drying module 205B. The upper primary cleaning module 201A, the lower primary cleaning module 201B, the upper secondary cleaning module 202A, the lower secondary cleaning module 202B, the temporary storage platform 203, the upper drying module 205A, and the lower drying module 205B It is fixed to a frame (not shown) via a bolt or the like.

The first transport robot 209 that can move up and down is disposed in the first transport chamber 191, and the second transport robot 210 that can move up and down is disposed in the second transport chamber 193. The first transport robot 209 and the second transport robot 210 are movably supported by the support shafts 211 and 212 extending in the longitudinal direction, respectively. The first transport robot 209 and the second transport robot 210 have a drive mechanism such as a motor inside, and are movable up and down along the support shafts 211 and 212. Similarly to the transport robot 22, the first transport robot 209 has two upper and lower robots. As shown by the broken line in FIG. 12( a ), the lower robot of the first transport robot 209 is disposed at a position where the temporary storage station 180 can be accessed. When the robot on the lower side of the first transport robot 209 accesses the temporary storage station 180, the shutter (not shown) provided in the partition wall 1b is opened.

The first transport robot 209 is activated in the temporary storage station 180, the upper primary cleaning module 201A, the lower primary cleaning module 201B, the temporary storage station 203, the upper secondary cleaning module 202A, and the lower secondary cleaning component 202B. The semiconductor wafer 16 is carried between. When the semiconductor wafer before cleaning (the semiconductor wafer to which the slurry adheres) is transported, the first transport robot 209 uses the lower robot and uses the upper robot when transporting the cleaned semiconductor wafer. The second transport robot 210 moves the semiconductor wafer 16 between the upper secondary cleaning module 202A, the lower secondary cleaning module 202B, the temporary storage unit 203, the upper drying element 205A, and the lower drying element 205B. Since the second transport robot 210 transports only the cleaned semiconductor wafer, there is only one robot. The transport robot 22 shown in FIG. 1 uses the upper robot to take out the semiconductor wafer from the upper drying element 205A or the lower drying element 205B, and returns the semiconductor wafer to the wafer cassette. When the upper robot of the transport robot 22 accesses the drying elements 205A and 205B, the shutter (not shown) provided in the partition wall 1a is opened.

Since the cleaning unit 64 has two primary cleaning modules and two secondary cleaning modules, it is possible to form a plurality of cleaning circuits for cleaning a plurality of semiconductor wafers in parallel. The "cleaning line" is a moving path when one semiconductor wafer is cleaned by a plurality of cleaning elements inside the cleaning unit 64. For example, as shown in FIG. 13, the first transport robot 209, the upper primary cleaning module 201A, the first transport robot 209, the upper secondary cleaning element 202A, the second transport robot 210, and the upper drying element 205A can be used. In the order of transporting one semiconductor wafer (refer to the cleaning line 1), the first transport robot 209, the lower primary cleaning module 201B, the first transport robot 209, and the lower secondary cleaning element 202B can be arranged in parallel. The second transport robot 210 then transports the other semiconductor wafers in the order of the lower drying element 205B (see the cleaning line 2). As described above, a plurality of (typically two) semiconductor wafers can be cleaned and dried almost simultaneously using two parallel cleaning lines.

Next, the configuration of the upper drying element 205A and the lower drying element 205B will be described. Both the upper drying element 205A and the lower drying element 205B are dryers that perform rotational movement drying. Since the upper drying element 205A and the lower drying element 205B have the same structure, the upper drying element 205A will be described below. Fig. 14 is a longitudinal sectional view showing the upper drying module 205A, and Fig. 15 is a plan view showing the upper drying module 205A. The upper drying element 205A has a base 401 and four cylindrical substrate supporting members 402 supported by the base 401. The base 401 is fixed to the upper end of the rotating shaft 406, and the rotating shaft 406 is rotatably supported by a bearing 405. The bearing 405 is fixed to the inner circumferential surface of the cylindrical body 407 that extends in parallel to the rotating shaft 406. The lower end of the cylindrical body 407 is attached to the gantry 409, and its position is fixed. The rotating shaft 406 is coupled to the motor 415 via the pulleys 411, 412 and the belt 414, and the base 401 is rotated about its axis by the drive motor 415.

A rotating cover 450 is fixed to the upper surface of the base 401. In addition, FIG. 14 shows a longitudinal sectional view of the rotary cover 450. The spinner cover 450 is configured to surround the entire circumference of the semiconductor wafer 16. The longitudinal sectional shape of the rotary cover 450 is inclined inward in the radial direction. In addition, the longitudinal cross-sectional view of the rotary cover 450 is composed of a smooth curve. The upper end of the rotating cover 450 is close to the semiconductor wafer 16, and the inner diameter of the upper end of the rotating cover 450 is set to be slightly larger than the diameter of the semiconductor wafer 16. Further, a slit 450a extending in the shape of the outer peripheral surface of the substrate supporting member 402 is formed at the upper end of the rotary cover 450 in correspondence with each of the substrate supporting members 402. A liquid discharge hole 451 extending obliquely is formed on the bottom surface of the rotary cover 450.

A front nozzle 454 is disposed above the semiconductor wafer 16, and the front nozzle 454 supplies pure water to the surface (front surface) of the semiconductor wafer 16 as a cleaning liquid. The front nozzle 454 is configured to face the center of the semiconductor wafer 16. The front nozzle 454 is connected to a pure water supply source (cleaning liquid supply source) (not shown), and pure water is supplied to the center of the surface of the semiconductor wafer 16 by the front nozzle 454. As the cleaning liquid, a chemical liquid is listed in addition to pure water. Further, two nozzles 460 and 461 for performing rotational movement drying are arranged in parallel above the semiconductor wafer 16. The nozzle 460 is for supplying IPA vapor (a mixture of isopropyl alcohol and N 2 gas) to the surface of the semiconductor wafer 16, and the nozzle 461 supplies pure water in order to prevent drying of the surface of the semiconductor wafer 16. These nozzles 460, 461 are configured to be movable in the radial direction of the semiconductor wafer 16.

Inside the rotating shaft 406, a rear nozzle 463 connected to the cleaning liquid supply source 465 and a gas nozzle 464 connected to the drying gas supply source 466 are disposed. Pure water is stored as a cleaning liquid in the cleaning liquid supply source 465, and pure water is supplied to the back surface of the semiconductor wafer 16 by the rear nozzle 463. Further, in the dry gas supply source 466, N2 gas, dry air, or the like is stored as a dry gas, and the dry gas is supplied to the back surface of the semiconductor wafer 16 by the gas nozzle 464.

Next, the supply of pure water from the front nozzle 454 is stopped, the front nozzle 454 is moved to a predetermined standby position away from the semiconductor wafer 16, and the two nozzles 460, 461 are moved to the upper side of the semiconductor wafer 16. position. Then, while the semiconductor wafer 16 is rotated at a low speed of 30 to 150 min-1, IPA vapor is supplied from the nozzle 460 to the surface of the semiconductor wafer 16, and pure water is supplied from the nozzle 461 to the surface of the semiconductor wafer 16. At this time, pure water is also supplied from the rear nozzle 463 to the back surface of the semiconductor wafer 16. Then, the two nozzles 460, 461 are simultaneously moved in the radial direction of the semiconductor wafer 16. Thereby, the surface (upper surface) of the semiconductor wafer 16 is dried.

Thereafter, the two nozzles 460 and 461 are moved to the designated standby position, and the supply of the pure water from the rear nozzle 463 is stopped. Then, the semiconductor wafer 16 is rotated at a high speed of 1000 to 1500 min-1, and the pure water adhering to the back surface of the semiconductor wafer 16 is shaken. At this time, the dry gas is blown from the gas nozzle 464 to the back surface of the semiconductor wafer 16. As a result, the back surface of the semiconductor wafer 16 is dried. The dried semiconductor wafer 16 is taken out from the drying element 205A by the transport robot 22 shown in Fig. 1 and returned to the wafer cassette. As such, the semiconductor wafer is subjected to a series of processes including grinding, cleaning, and drying. According to the drying element 205A configured as described above, both surfaces of the semiconductor wafer 16 can be quickly and efficiently dried, and the end point of the drying process can be accurately controlled. Therefore, the processing time for the drying treatment does not become the speed limiting step of the entire cleaning step. Further, the processing time of the plurality of cleaning lines formed in the cleaning unit 4 can be averaged, and the output of the entire process can be improved.

According to the present embodiment, when the semiconductor wafer is carried into the polishing apparatus (before loading), the semiconductor wafer is in a dry state, and after the polishing and cleaning are completed, the semiconductor wafer is in a dry state before being unloaded, and is unloaded by the substrate cassette. The semiconductor crystal in a dry state can be placed in a cassette from the polishing apparatus and taken out. That is, it can be dried in/out and taken out.

The semiconductor wafer placed on the temporary stage 180 is transported to the first cleaning chamber 190 or the second cleaning chamber 192 via the first transfer chamber 191. The semiconductor wafer is subjected to a cleaning process in the first cleaning chamber 190 or the second cleaning chamber 192. The semiconductor wafer that has been cleaned in the first cleaning chamber 190 or the second cleaning chamber 192 is transported to the drying chamber 194 via the second transfer chamber 193. The semiconductor wafer is dried in a drying chamber 194. The dried semiconductor wafer is taken out from the drying chamber 194 by the transport robot 22 and returned to the cassette.

FIG. 16 is a schematic view showing an overall configuration of a polishing unit (polishing device) according to an embodiment of the present invention. As shown in FIG. 16, the polishing apparatus includes a polishing table 30A and a substrate such as a semiconductor wafer that holds an object to be polished, and presses the substrate against the top ring 31A (holding portion) of the polishing surface on the polishing table.

The first polishing unit 3A is a polishing unit for polishing between the polishing pad 10 and the semiconductor wafer 16 disposed opposite to the polishing pad 10. The first polishing unit 3A has a polishing table 30A for holding the polishing pad 10, and a top ring 31A for holding the semiconductor wafer 16. The first polishing unit 3A has a swing arm 110 for holding the top ring 31A, a swing shaft motor 14 for swinging the swing arm 110, and a driver 18 for supplying drive power to the swing shaft motor 14. Further, the first polishing unit 3A has the arm torque detecting portion 26 that detects the arm torque applied to the swing arm 110 and the arm torque 26a detected based on the arm torque detecting portion 26 to detect the grinding end point indicating the end of the grinding. The end point detecting unit 28 is. The end point detecting unit 28 detects the polishing end point indicating the end of the polishing using at least one of the output of the arm torque detecting unit 26 and the output of the current detecting unit 810, which will be described later.

The present embodiment will be described with reference to Figs. 16 to 48. In the aspect in which the top ring is held at the end of the swing arm, the accuracy of the polishing end point detection can be improved. In the present embodiment, a method of detecting the driving load of the driving unit that rotationally drives the polishing table or the top ring by the method of the eddy current can be used as the polishing end point detecting means. In the present embodiment, in the embodiment in which the top ring is held at the end of the swing arm, the polishing end point detection is mainly performed based on the eddy current. However, the polishing end point can be detected based on the eddy current arm torque, or the grinding end can be made. The driving load of the driving unit that is rotationally driven by the table or the top ring is detected to detect the polishing end point.

The holding portion, the swing arm, the arm driving portion, and the end point detecting portion constitute a group, and the groups having the same configuration are provided in the first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D, respectively.

The polishing table 30A is coupled to the motor M3 (see FIG. 2), which is a driving portion disposed below the table shaft 102, and is rotatable around the table shaft 102. A polishing pad 10 is attached to the upper surface of the polishing table 30A, and the surface 101 of the polishing pad 10 constitutes a polishing surface for polishing the semiconductor wafer 16. A polishing liquid supply nozzle (not shown) is provided above the polishing table 30A, and the polishing liquid Q is supplied to the polishing pad 10 on the polishing table 30A by the polishing liquid supply nozzle. As shown in FIG. 16, an eddy current type detector 50 that generates an eddy current in the semiconductor wafer 16 and detects the end point of the polishing by detecting the eddy current is embedded in the polishing table 30A.

The top ring 31A is composed of a top ring main body 24 that presses the semiconductor wafer 16 against the polishing surface 101, and a retaining ring 23 that holds the outer peripheral edge of the semiconductor wafer 16 so that the semiconductor wafer 16 does not fly out from the top ring.

The top ring 31A is coupled to the top ring shaft 111. The top ring shaft 111 is moved up and down with respect to the swing arm 110 by a vertical movement mechanism (not shown). By the vertical movement of the top ring shaft 111, the top ring 31A as a whole is lifted and positioned relative to the swing arm 110.

Further, the top ring shaft 111 is coupled to the rotating drum 112 via a key (not shown). The rotary cylinder 112 has a timing pulley 113 at its outer peripheral portion. A top ring motor 114 is fixed to the swing arm 110. The timing pulley 113 is connected to the timing pulley 116 provided on the top ring motor 114 via the timing belt 115. When the top ring motor 114 rotates, the rotating drum 112 and the top ring shaft 111 are integrally rotated via the timing pulley 116, the timing belt 115, and the timing pulley 113, and the top ring 31A is rotated.

The swing arm 110 is coupled to the rotating shaft of the swing shaft motor 14. The swing shaft motor 14 is fixed to the swing arm shaft 117. Therefore, the swing arm 110 is supported to be rotatable relative to the swing arm shaft 117.

The top ring 31A can hold a substrate such as the semiconductor wafer 16 on its lower surface. The swing arm 110 is rotatable about the swing arm shaft 117. The top ring 31A holding the semiconductor wafer 16 on the lower surface is moved from the receiving position of the semiconductor wafer 16 to the upper side of the polishing table 30A by the whirling of the swing arm 110. Then, the top ring 31A is lowered, and the semiconductor wafer 16 is pressed against the surface (polishing surface) 101 of the polishing pad 10. At this time, the top ring 31A and the polishing table 30A are respectively rotated. At the same time, the polishing liquid is supplied from the polishing liquid supply nozzle provided above the polishing table 30A to the polishing pad 10. Thus, the semiconductor wafer 16 is brought into sliding contact with the polishing surface 101 of the polishing pad 10 to polish the surface of the semiconductor wafer 16.

The first polishing unit 3A has a table driving unit (not shown) that drives the polishing table 30A to rotate. The first polishing unit 3A may have a table torque detecting unit (not shown) that detects the table torque applied to the polishing table 30A. The stage torque detecting unit can detect the table torque from the current of the table drive unit of the rotary motor. The end point detecting unit 28 may detect the end point of the polishing indicating the end of the polishing only from the eddy current detected by the eddy current type detector 50, and the end point detecting unit 28 may consider the arm torque 26a detected by the arm torque detecting unit 26. And the torque of the table, and the end point of the polishing indicating the end of the grinding is detected.

Next, the eddy current type detector 50 included in the polishing apparatus of the present invention will be described in detail with reference to the drawings. 17 is a view showing a configuration of the eddy current type detector 50. FIG. 17(a) is a block diagram showing the configuration of the eddy current type detector 50, and FIG. 17(b) is an equivalent circuit diagram of the eddy current type detector 50. .

As shown in Fig. 17 (a), the eddy current type detector 50 is disposed in the vicinity of the target metal film (or conductive film) mf, and an alternating current signal source 52 is connected to the coil. Here, the metal film (or conductive film) mf for detecting the target is, for example, a film of Cu, Al, Au, W or the like formed on the semiconductor wafer W. The eddy current type detector 50 is disposed, for example, in the vicinity of 1.0 to 4.0 mm with respect to the target metal film (or conductive film).

In the eddy current detector, by generating an eddy current in the metal film (or conductive film) mf, the oscillation frequency is changed, and the frequency type and impedance change of the detection metal film (or the conductive film) are changed from the frequency, according to the impedance Change the impedance type of the detection metal film (or conductive film). . That is, in the frequency type, in the equivalent circuit shown in FIG. 17(b), when the eddy current I2 is changed, when the impedance Z is changed and the oscillation frequency of the signal source (variable frequency oscillator) 52 is changed, The change of the oscillation frequency can be detected by the detector circuit 54, and the change of the metal film (or the conductive film) can be detected. In the impedance type, in the equivalent circuit shown in FIG. 17(b), when the eddy current I2 is changed, when the impedance Z is changed and the impedance Z seen from the signal source (fixed frequency oscillator) 52 is changed, The change of the impedance Z can be detected by the detector circuit 54, and the change of the metal film (or the conductive film) can be detected.

In the impedance type eddy current detector, the signal output X, Y, phase, and combined impedance Z are taken out as will be described later. From the frequency F or the impedance X, Y, etc., measurement information of the metal film (or conductive film) Cu, Al, Au, W is obtained. The eddy current type detector 50 can be built in the vicinity of the surface of the inside of the polishing table 30A as shown in FIG. 16, and the eddy current type detector 50 is located at a position opposed to the semiconductor wafer of the polishing target via the polishing pad, and flows from the flow. An eddy current of a metal film (or a conductive film) on the semiconductor wafer is used to detect a change in the metal film (or conductive film).

The frequency of the eddy current detector can use a single wave, a mixed wave, an AM modulated wave, an FM modulated wave, a scan output of a function generator, or a plurality of oscillation frequency sources, which is suitable for the film type of the metal film, and selects an oscillation frequency with good sensitivity. ,Modulation.

The impedance type eddy current detector will be specifically described below. The AC signal source 52 uses a fixed frequency oscillator of about 2 to 30 MHz, such as a crystal oscillator. Further, the current I1 flows to the eddy current type detector 50 by the alternating voltage supplied from the alternating current signal source 52. The current flows to the eddy current type detector 50 disposed in the vicinity of the metal film (or conductive film) mf, and the magnetic flux and the metal film (or conductive film) mf are interlinked therebetween. The mutual inductance M is formed, and the eddy current I2 flows in the metal film (or conductive film) mf. Here, R1 is an equivalent impedance including the primary side of the eddy current detector, and L1 is a self-inductance of the primary side including the eddy current detector in the same manner. On the metal film (or conductive film) mf side, R2 is an equivalent impedance corresponding to eddy current loss, and L2 is its self-inductance. From the terminals a, b of the AC signal source 52, the impedance Z on the eddy current detector side is changed depending on the magnitude of the eddy current loss formed in the metal film (or conductive film) mf.

18 and 19 are schematic views showing a configuration example of the eddy current type detector 50 of the present embodiment. The eddy current type detector 50 disposed in the vicinity of the substrate on which the conductive film is formed is composed of a can core 60 and six coils 860, 862, 864, 866, 868, and 870. The can core 60 as a magnetic body has a bottom surface portion 61a (bottom magnetic body), a core portion 61b (center magnetic body) provided at the center of the bottom surface portion 61a, and a peripheral wall portion 61c provided at a peripheral portion of the bottom surface portion 61a ( Peripheral magnetic body). The peripheral wall portion 61c is a wall portion provided around the peripheral portion of the bottom surface portion 61a and surrounding the core portion 61b. In the present embodiment, the bottom surface portion 61a has a circular disk shape, the core portion 61b has a solid cylindrical shape, and the peripheral wall portion 61c has a cylindrical shape surrounding the bottom surface portion 61a.

The central coils 860, 862 of the six coils 860, 862, 864, 866, 868, 870 are excitation coils that are coupled to the AC signal source 52. The field coils 860 and 862 form an eddy current on the metal film (or conductive film) mf disposed on the adjacent semiconductor wafer W by the magnetic field formed by the voltage supplied from the AC signal source 52. Detection coils 864 and 866 are disposed on the metal film side of the excitation coils 860 and 862, and a magnetic field generated by an eddy current formed in the metal film is detected. The dummy coils 868 and 870 are disposed on the opposite side of the detecting coils 864 and 866 with the exciting coils 860 and 862 interposed therebetween.

The exciting coil 860 is an inner coil that is disposed on the outer circumference of the core portion 61b and is capable of generating a magnetic field, and forms an eddy current in the conductive film. The exciting coil 862 is an external coil that is disposed on the outer circumference of the peripheral wall portion 61c and is capable of generating a magnetic field, and forms an eddy current in the conductive film. The detection coil 864 is disposed on the outer circumference of the core portion 61b, and is capable of detecting a magnetic field and detecting an eddy current formed in the conductive film. The detection coil 866 is disposed on the outer circumference of the peripheral wall portion 61c, and is capable of detecting a magnetic field and detecting an eddy current formed in the conductive film.

The eddy current detector has dummy coils 868, 870 that detect eddy currents formed in the conductive film. The dummy coil 868 is disposed on the outer circumference of the core portion 61b, and is capable of detecting a magnetic field. The virtual coil 870 is disposed on the outer circumference of the peripheral wall portion 61c, and is capable of detecting a magnetic field. In the present embodiment, the detection coil and the virtual coil are disposed on the outer circumference of the bottom surface portion 61a and the outer circumference of the peripheral wall portion 61c. However, the detection coil and the virtual coil may be disposed only on the outer circumference of the bottom surface portion 61a and the outer circumference of the peripheral wall portion 61c.

The axial direction of the core portion 61b is orthogonal to the conductive film on the substrate, and the detection coils 864 and 866 and the excitation coils 860 and 862 and the virtual coils 868 and 870 are disposed at different positions in the axial direction of the core portion 61b, and are in the core portion. In the axial direction of 61b, the positions of the detecting coils 864 and 866, the exciting coils 860 and 862, and the dummy coils 868 and 870 are arranged in order from the position close to the conductive film on the substrate. Lead wires (not shown) for connecting to the outside are taken out from the detecting coils 864 and 866, the exciting coils 860 and 862, and the dummy coils 868 and 870, respectively.

Fig. 18 is a cross-sectional view through the plane of the central axis 872 of the core portion 61b. The can core 60 as a magnetic body has a disk-shaped bottom surface portion 61a, a cylindrical core portion 61b provided at the center of the bottom surface portion 61a, and a cylindrical peripheral wall portion 61c provided around the bottom surface portion 61a. As an example of the size of the can core 60, the diameter L1 of the bottom surface portion 61a is about 1 cm to 5 cm, and the height L2 of the eddy current type detector 50 is about 1 cm to 5 cm. The outer diameter of the peripheral wall portion 61c is the same cylindrical shape in the height direction in Fig. 18, but may be a thinner shape (cone shape) that is tapered toward the bottom surface portion 61a, that is, toward the distal end.

The wires used in the detection coils 864, 866, the excitation coils 860, 862, and the dummy coils 868, 870 are copper, manganese nickel copper alloy wires, or nichrome wires. By using a manganese-nickel-copper alloy wire or a nichrome wire, the resistance and the like are small with temperature change, and the temperature characteristics are good.

In the present embodiment, the coils are wound around the outer side of the core portion 61b made of ferrite or the like and the outer side of the peripheral wall portion 61c to form the exciting coils 860 and 862. Therefore, the eddy that flows through the measuring object can be increased. Current density. Further, since the detection coils 864 and 866 are also formed outside the core portion 61b and outside the peripheral wall portion 61c, the generated reverse magnetic field (interlinkage magnetic flux) can be efficiently collected.

In order to increase the eddy current density flowing through the measurement target, in the present embodiment, the exciting coil 860 and the exciting coil 862 are further connected in parallel as shown in FIG. That is, the inner coil and the outer coil are electrically connected in parallel. The reasons for the parallel connection are as follows. When connected in parallel, the voltages that can be applied to the exciting coil 860 and the exciting coil 862 increase as compared with the case of the series connection, so that the current flowing through the exciting coil 860 and the exciting coil 862 increases. Therefore, the magnetic field increases. In addition, when connected in series, the inductance of the circuit increases, and the frequency of the circuit decreases. It is difficult to apply the required high frequency to the exciting coils 860, 862. Arrow 874 indicates the direction of current flowing through the excitation coil 860 and the excitation coil 862.

As shown in FIG. 19, the exciting coil 860 and the exciting coil 862 are connected such that the exciting coil 860 and the exciting coil 862 have the same magnetic field direction. That is, current flows in different directions in the exciting coil 860 and the exciting coil 862. The magnetic field 876 is the magnetic field generated by the inner excitation coil 860, and the magnetic field 878 is the magnetic field generated by the outer excitation coil 862. As shown in FIG. 20, the direction of the magnetic field of the exciting coil 860 and the exciting coil 862 is the same. That is, the direction of the magnetic field generated by the inner coil in the core portion 61b is the same as the direction of the magnetic field generated by the outer coil in the core portion 61b.

The magnetic field 876 and the magnetic field 878 shown in the region 880 are in the same direction, so that the two magnetic fields add up and become larger. In the present embodiment, the magnetic field increases the amount of the magnetic field 878 generated by the exciting coil 862 as compared with the case where only the magnetic field 876 generated by the exciting coil 860 exists.

Next, unlike FIG. 19, as shown in FIG. 21, the case where the exciting coil 860 and the exciting coil 862 are connected so that the exciting coil 860 and the exciting coil 862 have opposite magnetic directions will be described. That is, the current of the exciting coil 860 and the exciting coil 862 flows in the same direction. The magnetic field 876 is the magnetic field generated by the inner excitation coil 860, and the magnetic field 878 is the magnetic field generated by the outer excitation coil 862. As shown in FIG. 22, the direction of the magnetic field of the exciting coil 860 and the exciting coil 862 is opposite. That is, the direction of the magnetic field generated by the inner coil in the core portion 61b is opposite to the direction of the magnetic field generated by the outer coil in the core portion 61b.

The magnetic field 876 shown in region 880 is in the opposite direction to the magnetic field 878, so the two magnetic fields cancel out and become smaller. The magnetic field 878 generated by the outer excitation coil 862 suppresses the magnetic field 876 generated by the inner excitation coil 860, and changes the flow of magnetic lines of force in the core portion 61b. Further, the magnetic field shown in FIG. 22 is a case where the current flowing through the exciting coil 862 located outside is large. When the current is large, the magnetic field generated by the exciting coil 862 is larger than the magnetic field generated by the exciting coil 860 inside the peripheral wall portion 61c, so that the magnetic field 878 suppresses the magnetic field 876. As a result, the magnetic field shown in Fig. 22 is generated.

Comparing Fig. 20 with Fig. 22, the following can be seen. The eddy current density generated in the semiconductor wafer 16 by the magnetic field shown in Fig. 20 is generated to be strong in a narrow range. The eddy current density generated in the semiconductor wafer 16 by the magnetic field shown in Fig. 22 is generated to be strong over a wide range.

Fig. 23 is a schematic view showing an example of connection of coils of the eddy current detector; As shown in FIG. 23(a), the detecting coils 864, 866 and the dummy coils 868, 870 are connected to each other in opposite phases. The detection coil 864 is connected in series with the detection coil 866. The virtual coil 868 is connected in series with the virtual coil 870. In Fig. 23, excitation coils 860, 862, detection coils 864, 866, and virtual coils 868, 870 are illustrated by one coil.

The detection coils 864, 866 and the dummy coils 868, 870 constitute an inverted series circuit as described above, and both ends thereof are connected to a resistance bridge circuit 77 including a variable resistor 76. The excitation coils 860 and 862 are connected to the AC signal source 52 to generate an alternating magnetic flux, and an eddy current is formed in the metal film (or conductive film) mf disposed in the vicinity. The output voltage of the series circuit including the detecting coils 864 and 866 and the dummy coils 868 and 870 is adjusted so as to adjust the resistance of the variable resistor 76 so that the metal film (or the conductive film) can be adjusted to zero when it does not exist. The signals of L ₁ and L ₃ are adjusted to be in phase by the variable impedances 76 (VR ₁ , VR ₂ ) respectively connected to the detection coils 864 and 866 and the dummy coils 868 and 870 in parallel. That is, in the equivalent circuit of FIG. 23(b), the variable impedance VR ₁ (=VR _1-1 +VR _1-2 ) and VR ₂ (=VR _2-1 +VR _2-2 ) are adjusted to let VR _1-1 × (VR _2-2 + jωL ₃ ) = VR _1-2 × (VR _2-1 + jωL ₁ ) (1). Accordingly, FIG. 23 (c), the prior adjustment so that L _1, L _3, the signal (shown in dashed lines in FIG.) Becomes the same phase, same amplitude signal (solid line).

Next, when a metal film (or a conductive film) exists in the vicinity of the detecting coils 864 and 866, the magnetic flux generated by the eddy current formed in the metal film (or the conductive film) is in the detecting coils 864, 866 and The virtual coils 868, 870 are interlinked, but since the detecting coils 864, 866 are disposed closer to the metal film (or conductive film), the balance of the induced voltages generated at the detecting coils 864, 866 and the dummy coils 868, 870 is The damage is thereby able to detect the interlinkage magnetic flux formed by the eddy current of the metal film (or the conductive film). That is, by adjusting the series circuit of the detecting coils 864 and 866 and the dummy coils 868 and 870 from the exciting coils 860 and 862 connected to the alternating current signal source, and adjusting the balance by the resistance bridge circuit, the zero point can be adjusted. Therefore, since the eddy current flowing in the metal film (or the conductive film) can be detected based on the state of zero, the detection sensitivity of the eddy current in the metal film (or the conductive film) is improved. Thereby, the detection of the magnitude of the eddy current formed in the metal film (or the conductive film) can be performed in a large dynamic range.

Fig. 24 is a block diagram showing a synchronous detection circuit of an eddy current detector. This figure shows an example of a measuring circuit for observing the impedance Z on the side of the eddy current detector 50 from the side of the alternating current signal source 52. In the measurement circuit of the impedance Z shown in the figure, the resistance component (R), the reactance component (X), the amplitude output (Z), and the phase output (tan ^-1 R/X) accompanying the change in the film thickness can be taken out.

As described above, the signal source 52 for supplying the alternating current signal is a fixed frequency oscillator composed of a crystal oscillator, and supplies a voltage of a fixed frequency of, for example, 2 MHz, 8 MHz, and 16 MHz to a metal film (or conductive) disposed on the film-forming target. The eddy current detector 50 in the vicinity of the semiconductor wafer W of the film mf. The AC voltage formed by the signal source 52 is supplied to the eddy current type detector 50 via the band pass filter 82. The signal detected by the terminal of the eddy current type detector 50 is taken out by the high frequency amplifier 83 and the phase shifting circuit 84 by the synchronous detecting unit composed of the cos synchronous detecting circuit 85 and the sin synchronous detecting circuit 86, and the cos component of the detection signal is taken out. And sin ingredients. Here, the oscillation signal formed by the signal source 52 is formed by the phase shifting circuit 84 to form the in-phase component of the signal source 52 (the 090cos synchronous detecting circuit 85 and the sin synchronous detecting circuit 86) to perform the above-described synchronous detection.

The synchronously detected signals are removed from the unnecessary high-frequency components of the signal component by the low-pass filters 87 and 88, and the resistance component (R) output as the cos synchronous detection output and the reactance component as the sin synchronous detection output are respectively taken out. (X) output. Further, the vector operation circuit 89 outputs an amplitude output (R ² + X ² ) ^1/2 from the output of the resistance component (R) and the output of the reactance component (X). Further, the vector operation circuit 90 similarly outputs a phase output (tan ^-1 R/X) from the resistance component output and the reactance component output. Here, various filters are provided in the main body of the measuring device in order to remove the noise component of the detector signal. By setting the respective cutoff frequencies, for example, setting the cutoff frequency of the low-pass filter to a range of 0.1 to 10 Hz, it is possible to remove the noise component of the detector signal mixed in the polishing and to accurately measure the noise. The target metal film (or conductive film) was measured.

Next, an example of a method of performing end point detection will be described with reference to FIG. 25 using the eddy current type detector 50 shown in FIG. In FIG. 25, the vertical axis represents the film thickness (mm) of the semiconductor wafer 16, and the horizontal axis represents the polishing time (sec) after the start of polishing. The horizontal axis is also represented by an integer, and is the first rotation when measured by the eddy current type detector 50. 1 is the first rotation and N is the Nth rotation. The end point detecting unit 28 determines the polishing rate of the semiconductor wafer 16 from the detected eddy current, and creates an approximate line (initial polishing rate formula 882) based on the polishing rate. An initial polishing rate formula 882 is created using an eddy current obtained during a period in which the polishing table 30A is rotated a plurality of times in the initial stage of polishing.

The expected amount of grinding when the semiconductor wafer 16 is polished is calculated based on the polishing rate of the initial polishing rate formula 882, and the time to reach the polishing end point 884 is detected. The end point detecting unit 28 detects the polishing end point 884 based on the expected amount of polishing and the threshold 886 associated with the film thickness corresponding to the polishing end point 884. At this time, when the change in the output of the eddy current type detector 50 is small with respect to the change in the wiring height in the semiconductor wafer 16 caused by the polishing, it is difficult to accurately obtain the change in the output value of the eddy current type detector 50. . At this time, the cancel algorithm of the output value of the eddy current type detector 50 as shown below is executed.

In the cancel algorithm, the end point detecting unit 28 compares the film thickness related data obtained from the eddy current and the film thickness related data predicted from the polishing rate, and when the comparison result is larger than the specified value, the eddy current is not used. Film thickness related information. For example, comparing the data collected per rotation with the film thickness related data predicted from the initial polishing rate formula 882, the collected data is not used if the two are significantly different from the specified values. For example, when data is collected in the N+2th rotation, the difference between the data collected at the N+2th rotation and the data collected at the N+1th rotation is greater than (or less than) at the N+1th rotation. The data collected at the N+2th rotation is not used when the collected data differs from the data collected at the Nth rotation (specified value). Instead, a value based on the initial polishing rate formula 882 is used. When it is not used when the value is larger than the specified value or is not used when the value is specified, it is dependent on the polishing conditions such as the properties of the film.

In other cases where the collected data is not used, the following cases are also present. For example, when data is collected in the N+2th rotation, when the data collected at the N+2th rotation is larger than the data collected at the N+1th rotation, the collection collected at the N+2th rotation is not used. data. Instead, the data obtained based on the initial polishing rate formula 882 is used.

When the data collected by the N+2th rotation is not used, the data is used when the value close to the approximate line is obtained after the N+3th rotation. As already described, after the start of the grinding, the initial polishing rate formula 882 is created using several rotations, for example, it can be re-created using the latest number of rotations every ten rotations.

Next, an example in which the peripheral magnetic body is not surrounded by the peripheral portion of the bottom surface portion 61a and surrounding the wall portion of the core portion 61b will be described with reference to FIGS. 26 to 28. In FIGS. 26 and 27, the bottom surface portion 61a has a columnar shape, and the peripheral wall portion 61c is an eddy current type detector 50 (magnetic element) disposed at both ends of a columnar shape. Figure 26 is a plan view. Figure 27 is a cross-sectional view taken along line AA of Figure 26 . The peripheral magnetic body 61d is provided at two peripheral portions of the bottom surface portion 61a. This eddy current type detector 50 is an E-type magnetic element as shown in FIG. FIG. 28 is a plan view showing four eddy current type detectors 50 (magnetic elements) provided in the peripheral portion of the bottom surface portion 61a of the peripheral magnetic body 61d. The peripheral magnetic body 61d may be five or more.

In the case of the E-type magnetic element, the arrangement of the coils may be the arrangement of the coils shown in Figs. 49 and 50, in addition to the arrangement shown in Figs. Figure 49 is a plan view. Figure 50 is a cross-sectional view taken along line AA of Figure 49. In the embodiment shown in Figs. 49 and 50, detection coils 864a and 864b, excitation coil 860a, and excitation coils 860a are provided on the outer circumference of the portion 61e between the core portion 61b and the peripheral portion magnetic body 61d in the bottom surface portion 61a. 860b and virtual coils 868a, 868b. At least one of the detection coils 864a, 864b, the excitation coils 860a, 860b, and the dummy coils 868a, 868b may be provided in the portion 61e. Further, in the embodiment shown in Figs. 49 and 50, only the exciting coils 860a and 860b may be provided as the exciting coil and the dummy coil, and the exciting coil 860 and the dummy coil 868 may not be provided in the dummy coils 868a and 868b.

The detecting coil 864a and the detecting coil 864b may be electrically connected by wires or may be electrically independent without wire connection. The exciting coil 860a and the exciting coil 860b, the virtual coil 868a and the dummy coil 868b may be electrically connected by wires or may be electrically independent without using a wire.

Next, an embodiment in which the intensity of the magnetic field generated by the exciting coil 860 and/or the exciting coil 862 is changed when the conductivity of the semiconductor wafer 16 changes is described with reference to FIG. Hereinafter, an embodiment in which the strength of the magnetic field generated by the exciting coil 860 and the exciting coil 862 is changed will be described. However, the strength of the generated magnetic field may be changed only for one of the exciting coil 860 and the exciting coil 862.

In FIG. 48, an insulating layer 888 (insulating portion) is formed on the semiconductor wafer 16, and a conductive layer 890 such as copper is formed on the insulating layer 888. Polishing is performed from the state of Fig. 48 (a) to the state of Fig. 48 (c) via the state of Fig. 48 (b). The conductive layer 890 is used, for example, as a wiring.

In the state of FIG. 48(a), since the conductive layer 890 exists on the front surface of the semiconductor wafer 16, the conductive layer 890 generates a large amount of eddy current. In the state of FIG. 48(c), since the conductive layer 890 exists only in a small portion of the semiconductor wafer 16, the conductive layer 890 generates less eddy current. From the state of Fig. 48 (a) to the state of Fig. 48 (b), the strength of the magnetic field generated by the exciting coils 860, 862 is small. When the state shown in Fig. 48 (b) is reached, the strength of the magnetic field generated by the exciting coils 860 and 862 is increased. This is because the conductivity of the semiconductor wafer 16 changes when it is in the state of FIG. 48(b).

When the intensity of the magnetic field generated by the exciting coils 860 and 862 is changed when the conductivity of the semiconductor wafer 16 changes, the polishing of the portion 892 of the insulating layer 888 shown in FIG. 48(a) may be completed. Instead of becoming the state of Figure 48(b).

In order to increase the intensity of the magnetic field generated by the exciting coils 860 and 862, the current flowing through the exciting coils 860 and 862 is increased, or the voltage applied to the exciting coils 860 and 862 is increased. As another method of increasing the strength of the magnetic field, it is also possible to change from the state in which only the exciting coil 860 and the exciting coil 862 are used to the state in which both the exciting coil 860 and the exciting coil 862 are used.

Further, a plurality of eddy current detectors may be disposed inside the polishing table instead of changing the intensity of the magnetic field generated by the exciting coil 860 and/or the exciting coil 862 when the conductivity of the semiconductor wafer 16 changes. The detection sensitivities of a plurality of eddy current detectors are different from each other. From the state of Fig. 48 (a) to the state of Fig. 48 (b), the eddy current type detector 50 having a small detection sensitivity is used. In the state shown in Fig. 48 (b), the eddy current type detector 50 having a large detection sensitivity is used.

Here, "the detection sensitivities are different from each other" means "the intensity of the generated magnetic field is different", and/or "the range of the generated magnetic field is different". As a case where an eddy current type detector having a plurality of detection sensitivities different from each other is required, for example, there are the following cases. (a) It is necessary to measure the film thickness of a plurality of wafers in which the ratio of the conductive film in one wafer is different, and (b) the analysis in the height direction 896 shown in Fig. 48 (a) is required. (C) the case where it is necessary to measure the film thickness of a plurality of wafers in the height direction 896 shown in FIG. 48(a), etc. .

In the case of (c), it is necessary to measure the film thickness of a plurality of wafers having different amounts of polishing in the height direction 896, for example, the following. At the start of the polishing, the conductive layer 890 (Cu wiring) has a distance LL in the height direction shown in Fig. 48 (a). At the end of the polishing, the conductive layer 890 has a distance LS in the height direction 896 shown in Fig. 48(c). There are various possibilities as a combination of the distance LL and the distance LS. Depending on the range of the distance LL, a plurality of detectors having different resolutions are sometimes required.

As described above, as a method of changing the detection sensitivity, a method of arranging a plurality of eddy current detectors inside the polishing table has been described. However, as a method of changing the detection sensitivity, only the exciting coil 860 shown in FIG. 18 may be used. One of the exciting coils 862. That is, as a method of changing the detection sensitivity, a method may be employed which has the detection coil 864 and/or detection by at least one of the first step, the second step, and the third step with the rotation of the polishing table 30A. The step of detecting the eddy current formed on the semiconductor wafer 16 by the coil 866; and the step of detecting the end point of the polishing indicating the end of the polishing of the semiconductor wafer 16 from the detected eddy current. In the first step, the eddy current formed by the excitation coil 860 on the semiconductor wafer 16 is detected by the detection coil 864 and/or the detection coil 866. In the second step, the eddy current formed by the exciting coil 862 on the semiconductor wafer 16 is detected by the detecting coil 864 and/or the detecting coil 866. In the third step, the eddy current formed by the excitation coil 860 and the excitation coil 862 on the semiconductor wafer 16 is detected by the detection coil 864 and/or the detection coil 866.

The outer diameter of the exciting coil 860 is smaller than the outer diameter of the exciting coil 862. Therefore, the range of the magnetic field generated by the exciting coil 860 alone is larger than the range of the magnetic field generated by the exciting coil 862 alone. Therefore, the exciting coil 860 can measure the film thickness in a narrow region. The field coil 862 can measure the film thickness in a wide area.

When both the exciting coil 860 and the exciting coil 862 are used, the magnetic field generated by the exciting coil 860 and the exciting coil 862 can be combined (synthesized) and controlled. By the combination control, it is possible to more strongly control both the extended region of the magnetic field and the strength of the magnetic field as compared with the case where only one of the exciting coil 860 and the exciting coil 862 is used.

Which of the first, second, and third steps is to be employed may be determined by what structure the fine circuit on the semiconductor wafer 16 has, or to what extent the die size is.

Further, the relationship between the size of the eddy current type detector 50 and the size of the wafer to be measured is preferably the following. For example, in the case where the shape of the wafer is square or rectangular, the eddy current detector 50 is preferably circumscribed by an circumcircle which is circumscribed to the square or rectangle. The size of the eddy current detector 50 should not be too small or too large compared to the circumscribed circle. In the case where the wafer size is extremely larger or smaller than the size of the eddy current type detector 50, since eddy current may not be detected, in this case, it is sometimes necessary to arrange a plurality of eddy current type detectors 50 having different sizes.

Further, since the intensity of the eddy current is increased by merely increasing the exciting coil, it is effective to increase the excitation even when the agglomerate (film) shown in Fig. 48 (a) is detected. The "clump (film)" means that the conductive layer 890 covers the entire surface of the semiconductor wafer 16 as in the region 894. In addition, "only the excitation coil is added" means that the excitation coils 862 and 862 are provided, and the excitation coils 862, which are the outer coils, are provided, and the detection coils 864 and 866, the virtual coils 868 and 870, and the outer coils are not provided. Coil 866, virtual coil 870.

When the conductive layer 890 (Cu wiring) shown in FIG. 48(b) and FIG. 48(c) is detected, since the detection sensitivity of the eddy current type detector 50 is required to be larger than that in the state of FIG. 48(a), As for the detection coils 864 and 866 and the dummy coils 868 and 870, it is preferable to provide the outer coil, that is, the detection coil 866 and the dummy coil 870.

Next, the end point detecting unit 28 will be described with reference to an arm torque 26a detected by the arm torque detecting unit 26 and a table torque indicating an end point of polishing indicating the end of polishing. In FIG. 16, in the connection portion of the swing arm 110 connected to the swing shaft motor 14, the arm torque detecting portion 26 detects the arm torque 26a applied to the swing arm 110. Specifically, the arm drive unit is a swing shaft motor (rotary motor) 14 that rotates the swing arm 110, and the arm torque detecting unit 26 detects the arm torque 26a applied to the swing arm 110 from the current value of the swing shaft motor 14. The current value of the swing shaft motor 14 is an amount depending on the arm torque in the connection portion of the swing arm 110 connected to the swing shaft motor 14. In the present embodiment, the current value of the swing shaft motor 14 is the current value 18b supplied from the actuator 18 to the swing shaft motor 14.

A method of detecting the arm torque 26a by the arm torque detecting unit 26 will be described with reference to Fig. 29 . The driver 18 inputs a position command 65a related to the position of the swing arm 110 from the control unit 65. The position command 65a is information corresponding to the rotation angle of the swing arm 110 with respect to the swing arm shaft 117. Further, the driver 18 inputs the rotation angle 36a of the swing arm shaft 117 from the encoder 36 built in and mounted to the swing shaft motor 14.

The encoder 36 is capable of detecting the rotation angle 36a of the rotation shaft of the swing shaft motor 14, that is, the rotation angle 36a of the swing arm shaft 117. In the figure, the swing shaft motor 14 and the encoder 36 are shown separately, and in fact, the swing shaft motor 14 is integrated with the encoder 36. As an example of such an integrated motor, there is a synchronous AC servo motor with a feedback encoder.

The driver 18 has a deviation circuit 38, a current generation circuit 40, and a PWM circuit 42. The deviation circuit 38 determines the deviation 38a between the position command 65a and the rotation angle 36a from the position command 65a and the rotation angle 36a. The deviation 38a and the current value 18b are input to the current generating circuit 40. The current generating circuit 40 generates a current command 18a corresponding to the deviation 38a from the deviation 38a and the current current value 18b. The PWM circuit 42 is input with a current command 18a, and is controlled by PWM (Pulse Width Modulation) to generate a current value 18b. The current value 18b is a three-phase (U-phase, V-phase, W-phase) current capable of driving the swing shaft motor 14. The current value 18b is supplied to the swing shaft motor 14.

The current command 18a is an amount depending on the current value of the swing shaft motor 14, and depends on the amount of arm torque. The arm torque detecting unit 26 performs at least one of AD conversion, amplification, rectification, and rms conversion on the current command 18a, and outputs the result to the end point detecting unit 28 as the arm torque 26a.

The current value 18b is the current value itself of the swing shaft motor 14, and depends on the amount of arm torque. The arm torque detecting unit 26 may detect the arm torque 26a applied to the swing arm 110 from the current value 18b. When detecting the current value 18b, the arm torque detecting unit 26 can use a current detector such as a Hall detector.

A method of detecting the motor current by the current detecting unit 810 (detecting unit) will be described with reference to Fig. 29 . The current detecting unit 810 detects a motor M3 (first motor, see FIG. 2) for driving the rotation of the polishing table, a motor M1 for driving the rotation of the top ring 31A (second motor, see FIG. 5), and a swing arm. The current value of one of the motor M2 (the third motor, see FIG. 5) is swung, and a first output is generated. In the present embodiment, the current detecting unit 810 detects the current value of the motor M2 and generates the first output 810a. The current detecting unit 810 inputs a current value 18b of three phases (U phase, V phase, W phase).

The current detecting unit 810 samples the current value 18b of the U phase, the V phase, and the W phase, for example, every 10 msec, and obtains a moving average of 100 msec for each of the sampled current values 18b. The purpose of moving average is to reduce noise. Then, the U-phase, the V-phase, and the W-phase current value 18b are subjected to full-wave rectification, and then the effective value is obtained for each of the respective values by the effective value conversion. After the effective value is calculated, the three values are added to generate a first output 810a. The current detecting unit 810 outputs the generated first output 810a to the end point detecting unit 28.

Further, the noise reduction processing can perform various noise reduction processing, and is not limited to the above-described moving average processing. Further, the current detecting unit 810 may perform processing other than the calculation of the effective value on the current value 18b. For example, after calculating the respective absolute values of the current values 18b, the three values may be added to generate the first output 810a. Further, the current detecting unit 810 may generate a sum of squares of the absolute values of the three-phase current values of the motor as the first output. Further, it is also possible to calculate an effective value only for one or both of the current values 18b of the three phases of the U phase, the V phase, and the W phase. The first output may be any amount as long as it is an amount capable of indicating a change in torque. The end point detecting unit 28 that detects the end point of the polishing indicating the end of the polishing based on the first output can detect the end point of the polishing indicating the end of the polishing from the change in the first output (frictional force).

In the present embodiment, the swing arm 110 that swings in the horizontal direction (circumferential direction) on the plane of the polishing table 30A has been described. However, the present embodiment is also applicable to an arm that reciprocates in the radial direction between the center of rotation of the polishing table 30A and the end of the polishing table 30A on the plane of the polishing table 30A in the radial direction.

Further, the end point detecting unit 28 can be configured as a computer having a CPU, a memory, and an input/output unit. In this case, a program that functions as an end point detecting unit and a control means for controlling polishing of the polishing apparatus can be stored in the memory, wherein the end point detecting unit can detect the semiconductor wafer 16 from the detected eddy current. The end of the grinding end of the grinding.

Next, another embodiment having an optical detector will be described with reference to FIG. In the present embodiment, the detection of the torque fluctuation of the swing shaft motor 14 of the swing polishing table 30A and the detection of the reflectance of the polished surface of the semiconductor wafer 16 by the optical detector are used in combination. In order to perform the end point detection, a detector is incorporated in the polishing table 30A. The detector is an optical detector 724. As the optical detector 724, a detector using an optical fiber or the like is used. In addition, an eddy current detector may be used instead of the optical detector 724.

In the case of the embodiment of Fig. 30, the following problems can be solved. In order to perform the end point detection, when only one of the torque fluctuation detecting method or the optical detecting method is used, when the polishing of the metal film and the polishing of the insulating film are mixed in the polishing of the polishing target, there are the following problems. The torque variation detection method is applied to the detection of the boundary between the metal film and the insulating film, and the optical detection method is applied to the detection of the change in the thickness of the film. Therefore, in the case of only one mode, when both the detection of the boundary of the film and the detection of the thickness of the residual film are required, only insufficient detection accuracy can be obtained. By using the detection of the boundary of the film or the detection of the thickness of the residual film, it is possible to solve the problem by using the torque fluctuation detection and the optical detection.

In the case of the optical detector, the end point detecting portion of the polishing apparatus irradiates light to the semiconductor wafer 16 and measures the intensity of the reflected light from the semiconductor wafer 16. The end point detecting unit detects the end point of the polishing indicating the end of the polishing based on the arm torque detected by the arm torque detecting unit and the intensity of the reflected light from the semiconductor wafer 16 measured by the optical detector 724. The output of the optical detector 724 is sent to the control unit 65 via the wiring 726.

In the case of an optical detector, there is an opening 720 in a portion of the polishing pad 10. At the opening 720 there is an observation port 722 as a window. Light irradiation and detection of reflected light are performed via the observation port 722. At the time of polishing, the observation port 722 is incorporated at a position within the polishing table 30A that can face the semiconductor wafer 16. An optical detector 724 is disposed at a lower portion of the observation port 722. In the case where the optical detector 724 is a fiber detector, there is sometimes no viewing port 722.

When the observation port 722 is not provided, pure water is output from the periphery of the optical fiber detector, and the slurry supplied from the nozzle 728 is removed to detect the end point. The optical detector has a fluid supply unit (not shown) that supplies pure water (or a high-purity gas, a mixture of a liquid and a gas) for cleaning the slurry to the opening 420.

The detector can also have a plurality of detectors. For example, as shown in FIG. 30, the center portion and the end portion are provided to monitor the detection signals of both the center portion and the end portion. Fig. 30(a) shows the arrangement of the optical detector 724, and Fig. 30(b) shows an enlarged view of the optical detector 724. The end point detecting unit 28 selects a detection signal that is not affected by the polishing condition (or is most suitable for the polishing condition) from among the plurality of signals in response to changes in polishing conditions (material of the semiconductor wafer 16, polishing time, etc.). The end point is judged and the grinding is stopped.

This will be further explained. The combination of the torque fluctuation detection (motor current fluctuation measurement) and the optical detection by the swing shaft motor 14 described above is used for detecting the interlayer insulating film (ILD) and by STI (Shallow Trench Isolation). It is effective at the end of the polishing of the formed element isolation film. In optical detection such as SOPM (Spectrum Optical Endpoint Monitoring), the thickness of the residual film is detected, and the end point detection is performed. For example, in the manufacturing process of the laminated film of LSI, it is necessary to form a residual film by polishing of a metal film or polishing of an insulating film. It is necessary to polish the metal film and polish the insulating film, and it is possible to use the torque fluctuation detection and the optical detection separately depending on whether the metal film is polished or the insulating film is polished.

Further, when the film structure of the end portion is a mixed state of the metal and the insulating film, in the case of only one of the torque fluctuation detection and the optical detection, it is difficult to perform accurate end point detection. Therefore, the film thickness measurement is performed by the torque fluctuation detection and the optical detection, and it is determined whether or not the end point is obtained by the detection results of both, and the polishing is finished at the most appropriate timing. In the mixed state, in any of the detection of the torque fluctuation detection and the optical detection, since the measurement signal is weak, the measurement accuracy is lowered. However, by using a signal obtained by two or more measurement methods, it is possible to determine the most appropriate end position. For example, when the result of the end point is determined by any of the signals obtained by the two or more measurement methods, the end point is determined.

Next, another embodiment having an optical detector will be described with reference to FIG. In the present embodiment, the torque fluctuation of the swing shaft motor 14 of the swing polishing table 30A (the friction fluctuation of the polishing table 30A) is detected, and the reflectance of the polished surface of the semiconductor wafer 16 by the optical detector is detected. Detection of eddy currents in the object to be polished of the semiconductor wafer 16 by the eddy current type detector. Use these three detection methods in combination.

In the case of the embodiment of Fig. 31, the following problems can be solved. The torque fluctuation detecting method and the optical detecting method of the embodiment of FIG. 30 have a problem that it is difficult to detect a change in the thickness of the metal film. The embodiment of Fig. 31 solves this problem, and in the embodiment of Fig. 30, the detection of the eddy current is further used in combination. Since the eddy current in the metal film is detected, it is easier to detect the change in the thickness of the metal film.

31(a) shows the arrangement of the optical detector 724 and the eddy current type detector 730, FIG. 31(b) is an enlarged view of the optical detector 724, and FIG. 31(c) shows the amplification of the eddy current type detector 730. Figure. The eddy current type detector 730 is disposed in the polishing table 30A. The eddy current detector 730 generates a magnetic field on the semiconductor wafer 16 to detect the intensity of the generated magnetic field. The end point detecting unit 28 detects based on the arm torque detected by the arm torque detecting unit 26, the intensity of the reflected light from the semiconductor wafer 16 measured by the optical detector 724, and the intensity of the magnetic field measured by the eddy current type detector 730. Indicates the end of the grinding end of the grinding.

This embodiment is a combination of the torque fluctuation detection of the combination of the swing shaft motor 14 for the end point detection, and the detection of the physical quantity of the semiconductor wafer 16 by the optical detector 724 and the eddy current type detector 730 incorporated in the polishing table 30A. . The torque fluctuation detection (measurement of motor current fluctuation) of the swing shaft motor 14 is preferable in the end point detection of the portion where the film quality of the sample to be polished changes. The optical method is preferable in the detection of the residual film amount of the insulating film such as ILD or STI and the end point detection by the optical film. The end point detection by the eddy current type detector is preferably performed in the end point detection at the time of polishing the plated metal film to the lower layer insulating film as the end point.

In the manufacturing process of a semiconductor having a plurality of layers such as LSI, since polishing of a plurality of layers of various materials is performed, in order to perform polishing and end point detection of a plurality of types of films with high precision, in the embodiment, three kinds of end point detecting methods can be used. It is also possible to use three or more types. For example, the torque fluctuation detection (motor current fluctuation measurement (TCM)) of the motor that rotates the polishing table 30A can be used in combination.

Using a combination of these four endpoint detections, high-performance control and accurate end point detection are possible. For example, when the top ring 31A is moved (oscillated) on the polishing table 30A to perform polishing, the torque variation of the polishing table 30A caused by the change in the position of the top ring 31A is detected by the TCM. Thus, when the top ring 31A is located at the center of the polishing table 30A, when the top ring 31A is moved to one end of the moving polishing table 30A, and when the top ring 31A is moved to the other end of the polishing table 30A, the rotation of the top ring 31A is changed to the other end of the polishing table 30A. The moment changes, and the main cause of the difference in the pressing of the sample by the top ring 31A can be found. When the main cause is found, feedback such as adjustment of the pressing of the surface of the top ring 31A can be performed in order to uniformize the pressing of the sample.

The main cause of the torque fluctuation of the polishing table 30A caused by the change in the position of the top ring 31A is considered to be the degree of deviation of the horizontal degree of the top ring 31A and the polishing table 30A, and the level of the surface of the sample surface and the polishing pad 10. The deviation or the difference in the degree of wear of the polishing pad 10 is such that the frictional force when the top ring 31A is located at the center portion and when the top ring 31A is located at a position deviated from the center portion is different.

Further, when the film structure at the polishing end portion of the film of the semiconductor wafer 16 is a mixed state of the metal and the insulating film, since it is difficult to accurately detect the end point by only one detection method, the torque of the detection arm is varied. The optical detection method, or the method of detecting the arm torque fluctuation and the method of detecting the eddy current, or all of the three signal detection determination end point states, ends the polishing at the most appropriate time. In the hybrid state, in any of the methods of detecting the torque fluctuation, the optical type, and detecting the eddy current, since the measurement signal is weak, the measurement accuracy is lowered. However, by using a signal obtained by three or more measurement methods to determine, it is possible to determine the most appropriate end position. For example, when the result of the determination of the end point is determined using any of the signals obtained by the three or more measurement methods, the end point is determined.

List these combinations as shown below. i. Arm torque detection + torque detection, ii. Arm torque detection + optical detection, iii. Arm torque detection + eddy current detection, iv. Arm torque detection + Optical detection by microwave detector , v. arm torque detection + optical detection + torque detection, vi. arm torque detection + optical detection + eddy current detection, vii. arm torque detection + optical detection + optics by microwave detector Detection, viii. Arm torque detection + eddy current detection + torque detection, ix. arm torque detection + eddy current detection + optical detection by microwave detector, x. arm torque detection + torque Detection + optical detection by a microwave detector, xi. In addition, a combination of any detector combined with arm torque detection is also included.

32, 33, and 34 show an example of a case where the film structure of the end portion is a mixed state of a metal and an insulating film. In the following examples, as the metal, metals such as Cu, Al, W, and Co, the insulating film is SiO2, SiN, glass material (SOG (Spin-on Glass), BPSG (Boron Phosphorus Silicon Glass), etc.), Lowk material, Resin material, other insulating materials. SiO2, SOG, BPSG, etc. are produced by CVD or coating. 32(a) and 32(b) are examples of the abrasive insulating film. Fig. 32 (a) shows the state before polishing, and Fig. 32 (b) shows the state after polishing. Film 732 is ruthenium. A film 734 is formed on the film 732, and the film 734 is an insulating film such as SiO2 (thermal oxide film) or SiN. A film 736 which is an insulating film such as an oxide film (SiO2) or a glass material (SOG, BPSG) formed by film formation is formed on the film 734. The film 736 is ground to the state shown in Fig. 32 (b).

The film thickness of the film 736 was measured by optical detection. The boundary 758 of film 736 and film 734, the boundary of film 734 and film 732 are sensitive to light reflection. Therefore, it is desirable to be optically detected. Further, when the material of the film 736 and the film 734 are different, the change in friction during polishing may be large. At this time, it is preferable to optical detection + torque detection.

33(a), 33(b) are examples of the abrasive metal film. Fig. 33 (a) shows the state before polishing, and Fig. 33 (b) shows the state after polishing. The buried portion 737 is an STI. A film 738 similar to film 736 is formed on film 734. A gate electrode 740 is formed on the film 734. A diffusion layer 744 as a drain or a source is formed under the film 734. The diffusion layer 744 is connected to the vertical wiring 742 such as a through hole or a plug. The gate electrode 740 is connected to a vertical wiring 742 (not shown). The vertical wiring 742 penetrates through the film 738. A metal film 746 is formed on the film 738. The vertical wiring 742 and the metal film 746 are the same metal. The metal film 746 is ground to the state shown in Fig. 33 (b). Further, in FIG. 33, the gate electrode 740 and the diffusion layer 744 are formed, but other circuit elements may be formed.

Since the metal film 746 is a metal film, the eddy current is detected by changing the waveform of the eddy current in the metal film 746 when the metal film is drastically reduced. Further, optical detection can be achieved by reducing the amount of reflection from the metal film to a large amount, and the amount of reflection changes abruptly, and is used in combination with eddy current detection. Since the film 738 is an insulating film, the film thickness is measured by optical detection.

34(a), 34(b) are examples of the abrasive metal film. Fig. 34 (a) shows the state before polishing, and Fig. 34 (b) shows the state after polishing. The buried portion 737 is an STI. A film 738 is formed on the film 734. A gate electrode 740 is formed on the film 734. A diffusion layer 744 as a drain or a source is formed under the film 734. The diffusion layer 744 is connected to the vertical wiring 742 such as a through hole or a plug. The gate electrode 740 is connected to a vertical wiring 742 (not shown). The vertical wiring 742 penetrates through the film 738. A metal cross wire 750 is formed over the perforation 742. The metal film 748 and the lateral wiring 750 are the same metal. The metal film 748 is polished to the state shown in Fig. 34 (b).

Since the metal film 748 is a metal film, an eddy current detector is used to detect an eddy current. Since the insulating film 738 is an insulating film, the film thickness is measured by optical detection. In addition, the embodiment shown in FIG. 32 and below is applicable to all the embodiments of FIGS. 1 to 31.

Next, an embodiment which is a modification of Fig. 16 will be described with reference to Fig. 35. In the present embodiment, the swing arm 110 is composed of a plurality of arms. In FIG. 35, for example, it is constituted by an arm 752 and an arm 754. The arm 752 is attached to the swing shaft motor 14, and a top ring 31A is attached to the arm 754. At the joint portion between the arm 752 and the arm 754, the torque fluctuation of the swing arm is detected and the end point detection is performed.

In the case of the embodiment of Fig. 35, the following problems can be solved. In the case of FIG. 16, in the end point detection, there is a problem that the end point detection accuracy is lowered due to the influence of the gap vibration or the like described later. In the case of the embodiment of FIG. 35, since the influence of the gap vibration or the like can be reduced, this problem can be solved.

A torque detector that detects a torque fluctuation of the swing arm is disposed at the joint portion 756 of the arm 752 and the arm 754. The torque detector has a load cell 706 and a strain gauge. In the joint portion 756, the arm 752 and the arm 754 are fixed to each other by the metal member 710. The arm 752 is swingable by the swing shaft motor 14. When the torque change is measured by the fluctuation of the swing motor current, the swing operation may be temporarily stopped to measure the torque change. This is because the noise of the motor current of the swing motor increases with the swing operation.

In the case of the present embodiment, when the polishing torque fluctuates due to the frictional fluctuation of the portion of the film quality change such as the boundary 758 of FIG. 32(a), the boundary 758 can be performed by the torque detector of the joint portion 756. Detection. The detection of the fluctuation of the grinding torque can also be detected by the fluctuation of the current of the swing shaft motor 14. The torque fluctuation detection by the torque detector of the joint portion 756 has the following advantages as compared with the torque fluctuation detection by the current fluctuation.

The torque fluctuation detection by the detection of the current fluctuation causes an error caused by the rotation operation (shake) of the swing shaft motor 14, for example, the influence of the gap vibration of the swing arm 110 by the swing shaft motor 14. The gap vibration means that since the swing arm 110 is attached to the mounting portion of the swing shaft motor 14 with a slight play, the vibration of the play is caused by the swing operation of the swing shaft motor 14. In the torque fluctuation detection by the torque detector of the joint portion 756, there is no gap vibration in the joint portion 756, and it is possible to detect a torque fluctuation corresponding to the friction change of the polishing portion. Therefore, it is possible to perform end point detection with higher precision. In order to reduce the gap vibration, it is sometimes necessary to stop the shaking of the swing arm 110. However, in the torque fluctuation detection by the torque detector of the joint portion 756, high-accuracy end point detection can be performed without stopping the swing of the swing arm 110.

This aspect can also be applied to a case where there are a plurality of top rings 31A or a carousel type. With the development of the thin film of the LSI and the miniaturization of the functional elements, it is necessary to perform the polishing end point with higher precision than in the related art in order to stabilize the performance and maintain the yield. This method is effective as a technology that can cope with such a request.

Next, the control of the entire substrate processing apparatus by the control unit 65 will be described with reference to FIG. 36. The main controller, that is, the control unit 65, has a CPU, a memory, a recording medium, a software recorded on a recording medium, and the like. The control unit 65 performs monitoring and control of the entire substrate processing apparatus, and performs signal transmission and reception, information recording, and calculation for this purpose. The control unit 65 mainly performs signal transmission and reception with the unit controller 760. The unit controller 760 also has a CPU, a memory, a recording medium, a software recorded on a recording medium, and the like. In the case of FIG. 36, the control unit 65 incorporates a program that functions as an end point detecting means for detecting a polishing end point indicating the end of polishing and a control means for controlling polishing by the polishing unit. In addition, the unit controller 760 can also incorporate some or all of the program. The program can be updated. In addition, the program can not be updated.

According to the embodiment described with reference to FIGS. 36 to 38, the following problems can be solved. As a subject of the control method of a typical polishing apparatus hitherto, there are the following points. Regarding the end point detection, a plurality of tests are performed before the polishing of the target object, and the polishing conditions and the end point determination conditions are obtained based on the obtained data to form a formulation as a polishing condition. Although a part of the signal analysis is sometimes used, a detector signal is used for the semiconductor wafer structure to perform the process of determining the end point detection. As a result, sufficient accuracy cannot be obtained for the following requirements. In order to improve the yield of components and wafers to be produced, it is necessary to perform more accurate end point detection in the production of components and wafers, and it is necessary to suppress variations between batches and wafers. In order to achieve the above object, by using the system to perform the end point detection in the embodiment of FIG. 36 and subsequent steps, it is possible to perform more accurate end point detection, which can improve the yield and reduce the variation in the amount of polishing between wafers.

In particular, it enables high-speed data processing, signal processing for a wide variety of detectors, data for standardizing these signals, learning from artificial intelligence (AI), and judgment for endpoint detection. The creation of the data group, the learning of the determination example by the created data group, the improvement of the learning effect, the polishing parameter updated by the learning determination function, and the high-speed reflection of the polishing parameter to the control system High-speed communication processing system, etc. These can be applied to all of the embodiments shown previously in FIG.

The unit controller 760 controls the unit 762 (one or a plurality of) mounted on the substrate processing apparatus. In the present embodiment, the unit controller 760 is provided for each unit 762. The unit 762 includes an unloading unit 62, a polishing unit 63, a cleaning unit 64, and the like. The unit controller 760 performs operation control of the unit 762, signal transmission and reception with the monitoring detector, control signal transmission and reception, high-speed signal processing, and the like. The unit controller 760 is configured by an FPGA (field-programmable gate array), an ASIC (application specific integrated circuit), or the like.

Unit 762 is actuated by a signal from unit controller 760. Additionally, unit 762 receives the detector signal from the detector and sends it to unit controller 760. The detector signal is sometimes further sent from the unit controller 760 to the control unit 65. The detector signal is processed by the control unit 65 or the unit controller 760 (including arithmetic processing), and the signal for the next operation is sent from the unit controller 760. This unit 762 operates. For example, the unit controller 760 detects a torque variation of the swing arm 110 by a change in current of the swing shaft motor 14. The unit controller 760 sends the detection result to the control unit 65. The control unit 65 performs end point detection.

As the software, for example, the following is true. The software determines the type of the polishing pad 10 and the amount of slurry supply by the data recorded in the control device (control unit 65 or unit controller 760). Next, the software designates the polishing pad 10 that can be used in the maintenance period of the polishing pad 10 or the maintenance period, calculates the amount of slurry supply, and outputs them. The soft body may be a soft body that can be attached to the substrate processing apparatus 764 after being shipped from the substrate processing apparatus 764.

The communication between the control unit 65, the unit controller 760, and the unit 762 may be wired or wireless. Communication via the Internet or other communication means (high-speed communication by a dedicated return line) can be used between the outside of the substrate processing apparatus 764. The communication of the data may be the use of cloud by cloud collaboration, the exchange of data via the smartphone in the substrate processing apparatus by smart phone cooperation, and the like. Thereby, the operation state of the substrate processing apparatus and the setting information of the substrate processing can be exchanged with the outside of the substrate processing apparatus. As a communication device, a communication network can also be formed between the detectors and utilized.

The above-described control function and communication function enable automatic operation of the substrate processing apparatus. In order to perform an automatic operation, it is possible to standardize the control mode of the substrate processing apparatus and the threshold value for the determination of the polishing end point.

The abnormality/life prediction/judgment/display of the substrate processing apparatus can be performed. In addition, control for performance stabilization can be performed.

Automatically extract the various types of data during the operation of the substrate processing apparatus, the amount of polishing data (film thickness, end point of polishing), and automatically learn the operating state and the polishing state, and automatically standardize the control mode to perform abnormality/life prediction/judgment. /display.

It is possible to standardize, for example, a format in a communication method, a device interface, etc., and to manage devices and devices using information communication between devices and devices.

Next, in the substrate processing apparatus 764, information is acquired from the semiconductor wafer 16 by the detector, and a data processing device (cloud or the like) installed in the factory/factory in which the substrate processing apparatus is installed is provided via a communication means such as the Internet. The method of storing data, analyzing data stored in the cloud, and the like, and controlling the implementation of the substrate processing apparatus according to the analysis result will be described. Fig. 37 shows the structure of this embodiment.

1. The information obtained from the semiconductor wafer 16 by the detector may be as follows. Measurement signal or measurement data related to torque fluctuation of the swing shaft motor 14, measurement signal or measurement data of SOPM (optical detector), measurement signal or measurement data of the eddy current detector, and combination of one or more of the above The measurement signal or measurement data; 2. The function and structure of the communication means such as the Internet can be as follows. The signal or data including the above measurement signal or measurement data is transmitted to the data processing device 768 connected to the network 766. Network 766 can be a communication means such as the Internet or high speed communication. For example, the network 766 may be connected in the order of a substrate processing device, a gateway, an internet, a cloud, an internet, and a data processing device. As high-speed communication, there are high-speed optical communication, high-speed wireless communication, and the like. In addition, as high-speed wireless communication, Wi-Fi (registered trademark), Bluetooth (registered trademark), Wi-Max (registered trademark), 3G, LTE, etc. are considered. High-speed wireless communication other than this can also be applied. In addition, the cloud can be used as a data processing device. When the data processing device 768 is installed in the factory, it is possible to process signals from one or more substrate processing devices in the factory. When the data processing device 768 is installed outside the factory, signals from one or a plurality of substrate processing apparatuses in the factory can be transmitted to the outside of the factory and processed. In this case, it can be connected to a data processing device installed in China or abroad. 3. The data processing device 768 analyzes the data stored in the cloud or the like, and controls the substrate processing device 764 in accordance with the analysis result, and can be as follows. After the measurement signal or the measurement data is processed, it can be transmitted to the substrate processing device 764 as a control signal or control data. The substrate processing apparatus 764 that has received the data updates the polishing parameter related to the polishing process based on the data, and performs a polishing operation. When the data from the data processing device 768 is a signal/data indicating the detection of the end point, it is determined to be detected. Go to the end and finish grinding. The polishing parameters include (1) the pressing force for the four regions of the semiconductor wafer 16, that is, the central portion, the inner intermediate portion, the outer intermediate portion, and the peripheral portion, (2) the polishing time, and (3) the polishing table 30A, The rotation speed of the top ring 31A, (4) the threshold value for determining the polishing end point, and the like.

Next, another embodiment will be described with reference to FIG. 38. Fig. 38 is a view showing a modification of the embodiment of Fig. 37; In the present embodiment, the substrate processing apparatus, the intermediate processing apparatus, the network 766, and the data processing apparatus are sequentially connected. The intermediate processing device is composed of, for example, an FPGA or an ASIC, and has a filtering function, an arithmetic function, a data processing function, a data group creation function, and the like.

How to use the Internet and high-speed optical communication, the following three cases, (1) between the substrate processing device and the intermediate processing device is the Internet, the network 766 is the Internet, (2) High-speed optical communication between the substrate processing device and the intermediate processing device, network 766 for high-speed optical communication, and (3) high-speed optical communication between the substrate processing device and the intermediate processing device, from the intermediate processing device to the outside of the Internet The situation of the road.

(1) Case: The data communication speed and data processing speed in the overall system can be the speed of the Internet communication. The data sampling speed is about 1~1000mS, and it is possible to carry out data communication of a plurality of polishing condition parameters. In this case, the intermediate processing device 770 performs the creation of the data set sent to the data processing device 768. The details of the data set are described later. The data processing device 768 that has received the data group performs data processing, for example, calculates a change value of the polishing condition parameter up to the end position, a process plan for creating the polishing process, and returns to the intermediate processing device 770 via the network 766. The intermediate processing device 770 sends the changed value of the polishing condition parameter and the required control signal to the substrate processing device 764.

(2) Case: The communication between the substrate processing device-intermediate processing device, the detector signal between the intermediate processing device and the data processing device, and the state management device is high-speed communication. In high-speed communication, communication can be performed at a communication speed of 1 to 1000 Gbps. In high-speed communication, communication of data, data sets, commands, control signals, etc. is possible. In this case, a data set is created by the intermediate processing device 770 and sent to the data processing device 768. The intermediate processing device 770 extracts the data necessary for the processing in the material processing device 768 and processes it into a data group. For example, a plurality of detector signals for endpoint detection are extracted and used as a data set.

The intermediate processing device 770 sends the created data set to the data processing device 768 via high speed communication. The data processing device 768 performs calculation of a parameter change value up to the polishing end point and a process plan creation based on the data group. The data processing device 768 receives the data sets from the plurality of substrate processing devices 764, performs calculation of the parameter update values and process plan creation for the next step of the respective devices, and sends the updated data sets to the intermediate processing device 770. The intermediate processing device 770 converts the updated data set into a control signal based on the updated data set, and sends it to the control unit 65 of the substrate processing apparatus 764 through high speed communication. The substrate processing apparatus 764 performs polishing with respect to the updated control signal to perform accurate end point detection.

(3) Case: The intermediate processing device 770 receives a plurality of detector signals of the substrate processing device 764 by high speed communication. In high-speed optical communication, it can communicate at a communication speed of 1 to 1000 Gbps. In this case, control of the polishing conditions on the line by the high-speed communication can be performed between the substrate processing apparatus 764, the detector, the control unit 65, and the intermediate processing apparatus 770. The processing sequence of the data is, for example, detector signal reception (from the substrate processing device 764 to the intermediate processing device 770), data group creation, data processing, parameter update value calculation, update parameter signal transmission, and polishing control by the control unit 65. , the sequence of updated endpoint detections.

At this time, the intermediate processing device 770 performs high-speed end point detection control by the intermediate processing device 770 that performs high-speed communication. The status signal is periodically sent from the intermediate processing device 770 to the data processing device 768, and the data processing device 768 performs monitoring processing of the control state. The data processing device 768 receives the status signals from the plurality of substrate processing devices 764, and performs a plan for the subsequent processing steps for each of the substrate processing devices 764. The plan signal of the process-based process is sent to each of the substrate processing apparatuses 764, and the preparation of the polishing process and the polishing process are performed independently of each of the substrate processing apparatuses 764. In this way, the high-speed end point detection control is performed by the intermediate processing device 770 for high-speed communication, and the state management of the plurality of substrate processing devices 764 is performed by the data processing device 768.

Next, an example of the data set will be described. The detector signal and the required control parameters can be used as a data set. The data set can include: pressing of the top ring 31A to the semiconductor wafer 16, current of the swing axis motor 14, motor current of the polishing table 30A, measurement signal of the optical detector, measurement signal of the eddy current detector, and polishing pad 10 The position of the top ring 31A above, the flow rate/type of the slurry and the chemical liquid, and the calculation data of the above data.

The above-described data group can be transmitted using a transmission system that transmits one-dimensional data in parallel and a transmission system that sequentially transmits one-dimensional data. As a data group, the above-mentioned one-dimensional data can be processed into two-dimensional data as a data group. For example, when the X axis is used as the time and the Y axis is used as a large number of data columns, the plurality of parameter data simultaneously processed is processed into one data group. Two-dimensional data can be processed as data such as two-dimensional image data. This has the advantage that it can be transmitted and received as a time-dependent data for the transmission of two-dimensional data with less wiring than one-dimensional data. Specifically, when one-dimensional data is originally created as one signal line, a large amount of wiring is required, but in the case of two-dimensional data transmission, a plurality of signals can be transmitted by one line. In addition, when a plurality of lines are used, the interface with the data processing device 768 that receives the transmitted material becomes complicated, and the data reorganization in the data processing device 768 becomes complicated.

Further, when such a time-dependent two-dimensional data set exists, it is easy to compare the data set at the time of polishing by the conventional standard polishing conditions with the data set of the standard polishing conditions by the current point. Further, it is possible to easily know the difference between the two-dimensional data by the difference processing or the like. It is also easy to extract a portion where the difference is present and to detect a detector that is causing an abnormality and a parameter signal. Further, it is also easy to perform abnormality detection by extracting the parameter signal of the portion different from the surrounding difference by comparing the previous standard polishing conditions with the data group in the polishing at the current point.

39 is a view showing another schematic configuration example (an embodiment of the nineteenth to twenty-secondth embodiments) of the detector, and FIG. 39(a) is a plan view, and FIG. As shown in the figure, the liquid supply hole 1042 and the liquid discharge hole 1046 are disposed (in the order of the liquid discharge hole 1046 and the liquid supply hole 1042 in the moving direction of the polishing table 30A), and the cross section of the through hole 1041 is substantially The elliptical shape is such that the outer peripheral end of the lower end surface of the through hole 1041 surrounds the upper end surface of the liquid supply hole 1042 and the liquid discharge hole 1046 such that the center of the liquid supply hole 1042 and the center of the liquid discharge hole 1046 are connected to the center point and the through hole 1041 The center point is forward in the moving direction (arrow D direction) of the polishing table 30A. Thereby, the flow of the transparent liquid Q supplied from the liquid supply hole 1042 into the through hole 1041 is a flow that travels perpendicularly to the polished surface 16a of the semiconductor wafer 16. Further, by making the cross section of the through hole 1041 substantially elliptical, the area of the through hole 1041 can be minimized, and the influence on the polishing property can be reduced.

Further, the irradiation light fiber 1043 and the reflected light fiber 1044 are disposed in the liquid supply hole 1042 such that the center line thereof is parallel to the center line of the liquid supply hole 1042. Further, it is also possible to replace the illumination optical fiber 1043 and the reflected optical fiber 1044 with one optical fiber for irradiation and reflection.

Next, an embodiment of the twenty-fourth and twenty-fourth aspects will be described with reference to the drawings. Fig. 40 is a view showing a schematic configuration of an embodiment of the present invention. In FIG. 40, the water discharge nozzle 1005 ejects a cylindrical water flow and abuts against the processing surface 1002a of the semiconductor wafer 16 on which the thin film 1002 is formed. The front end portion of the irradiation optical fiber 1007 and the light-receiving optical fiber 1008 is inserted into the water discharge nozzle 1005.

In the above configuration, the pressurized water flow 1006 is supplied to the water discharge nozzle 1005, and the fine cylindrical water flow 1004 is brought into contact with a predetermined position of the processing surface 1002a of the semiconductor wafer 16 from the tip end thereof to form the measurement point 1003. In this state, light is transmitted from the measurement optical unit 1009 to the water flow 1004 from the measurement calculation unit 1009, and the light is irradiated to the polishing surface in the measurement point 1003 of the semiconductor wafer 16 through the water flow 1004. The optical axis in the water stream 1004 at this time should preferably be substantially perpendicular to the abrasive surface in the device configuration. However, depending on the situation, the optical fiber 1008 may receive the positional relationship of the reflected light from the polishing surface of the light from the illumination fiber, and the optical axis 1004 may be inclined with respect to the polishing surface.

The reflected light reflected by the treated surface (polishing surface) 1002a is guided to the measurement computing unit 1009 by the water flow 1004 and the light-receiving optical fiber 1008. In the measurement calculation unit 1009, the film thickness of the film 1002 is measured from the reflected light. At this time, the inner surface of the water discharge nozzle 1005 is mirror-finished, and the irradiated/reflected light can be efficiently guided to the illumination optical fiber 1007 and the light-receiving optical fiber 1008.

Further, it is true that there is a residual water droplet in the portion where the film 1002 is in contact with the water flow 1004, and the measurement point 1003 is disturbed. Here, as shown in FIG. 41, a drain member 1138 which is spirally wound from the water discharge nozzle 1005 to the measurement point 1003 of the film 1002 may be provided to remove water droplets. Further, when the water flow 1004 is inclined with respect to the semiconductor wafer, and the mechanism for supplying the water flow 1004 to the upward direction and the downward direction, the mechanism for removing the water droplets may be appropriately combined. In addition, as a member for the drainage, it is possible to use a structure having a shape such as a spring, a structure in which the surface tension of water is used, or a suction nozzle (not shown), and to surround the water discharge. The structure of the nozzle 1005.

42 and 43 are diagrams showing a configuration example of a case where the film thickness during polishing is instantaneously detected in a polishing apparatus that polishes the polished surface of the semiconductor wafer 16 by the relative movement of the semiconductor wafer 16 and the polishing pad 10. Figure 42 is a partial cross-sectional side view, and Figure 43 is a view of Figure 42 extending arrows Y-Y.

In the water discharge nozzle 1005, the water discharge nozzle 1005 is connected to the pressurized water flow pipe 1136, and the water of the water flow 1004 discharged from the water discharge nozzle 1005 is received by the water tray 1135, and the drain pipe is used as a drain pipe. 1137 is discharged. The upper end of the water tray 1135 is opened to the upper surface of the polishing pad 10, and the water flow 1004 discharged from the water discharge nozzle 1005 forms a measurement point 1003 on the polishing surface of the semiconductor wafer 16 in the same manner as in FIGS. 40 and 41. In the figure, the water discharge nozzle 1005 is relatively large in order to facilitate understanding of the water discharge nozzle 1005. However, in order to construct a minute point, the diameter of the water discharge nozzle 1005 is small (0.4 mm to 0.7 mm).

In the water discharge nozzle 1005, the distal end portion of the illumination optical fiber 1007 and the light-receiving optical fiber 1008 is inserted into the water discharge nozzle 1005, and is guided from the measurement calculation unit 1009 to the water discharge nozzle 1005 through the irradiation optical fiber 1007. The water flow 1004 discharged from the water discharge nozzle 1005 is irradiated to the measurement point 1003 of the polishing surface that is in contact with the water flow 1004. The reflected light reflected by the polishing surface is guided to the measurement calculation unit 1009 by the water flow 1004 and the light-receiving optical fiber 1008.

According to a twenty-fifth aspect, the workpiece processing apparatus includes a plurality of processing regions in which a plurality of processing units that have been subjected to light shielding processing are housed in a vertical arrangement, and a carrier is housed inside and disposed in the processing region. The conveyance area between the processing area and the conveyance area is a light-shielding wall, the front surface of the conveyance area is shielded by the maintenance door, and the processing unit is connected to the light-shielding wall in a light-shielding state.

In this way, the processing unit is subjected to a light-shielding process, and a light-shielding wall is disposed between the processing region and the transporting region where the processing unit is disposed, and the front surface of the transporting region is shielded from the maintenance door, even when the processing unit is opened for maintenance. In the state of the door, it is also prevented that light from the outside enters into the conveyance area, and even when the processing unit of the upper and lower processing units is maintained, for example, the upper processing unit can be operated by the lower processing unit in the light blocking state. The treatment of the object to be ground. Thereby, in the maintenance of a part of the processing unit, the object to be polished can be processed by a processing unit other than the processing unit, and the device is not stopped.

According to a twenty-seventh aspect, in the apparatus of the aspect 18, the object to be polished is provided with a shutter insertion opening having a shutter that is openable and closable, and a light shielding film surrounding the object insertion opening is provided in the light shielding wall. An opening is provided in a region surrounded by the light shielding film.

In this way, in the state in which the gate of the processing unit is opened, the object to be polished is transferred while maintaining the light-shielding state in the processing unit and the conveyance region, and the gate of the processing unit can be closed, for example, during maintenance, etc., can be prevented. Light from the outside passes through the opening of the light shielding wall and enters the conveyance area.

According to a twenty-seventh aspect, in the workpiece processing apparatus according to the aspect 24 or 25, the processing area is a cleaning area, and the processing of the object to be polished is cleaning of the object to be polished.

According to the twenty-seventh to twenty-seventh aspects, light corrosion of copper wiring or the like due to irradiation of light to the surface to be polished of the object to be polished is prevented, and the object to be polished is maintained during maintenance of a part of the processing unit in the apparatus. Although the number of processes is temporarily reduced, it is possible to prevent the treatment of the object to be polished due to light corrosion of copper wiring or the like due to irradiation of light.

In the 25th to 27th aspects, the following features are also possible. (1) A device comprising a hermetic mechanism for reducing electrical decomposition between metal features in a semiconductor material, the hermetic mechanism being used for light that does not expose the semiconductor material to energy having a bandgap energy of a semiconductor material (ie, a substrate) in. (2) In the apparatus according to (1) above, the sealing mechanism is disposed around a semiconductor processing tool selected from the group consisting of a chemical mechanical polishing device and a brush cleaning device. (3) The apparatus according to (2) above, further comprising a light source capable of generating light having energy lower than an energy gap energy. (4) The apparatus according to (3) above, further comprising a process monitoring camera capable of detecting light having energy lower than a band gap energy. (5) The apparatus according to (4) above, wherein the semiconductor material is a lanthanoid system, and the sealing mechanism excludes light having a wavelength of about 1.1 μm or less, and the light source generates light having a wavelength of more than about 1.1 μm. The camera detects it. For example, it is also possible to detect the end point of the polishing process of the lanthanum-based object to be polished of the polishing apparatus described above by using light having a wavelength of the region, for example, infrared light. (6) The apparatus according to (4) above, wherein the semiconductor material is a gallium system, and the sealing mechanism excludes light having a wavelength of about 0.9 μm or less, and the light source generates light having a wavelength of more than about 0.9 μm. The camera detects it. For example, it is also possible to detect the end point in the polishing process of the gallium-based object to be polished in the polishing apparatus described above by using light having a wavelength of the region, for example, infrared light. (7) A device comprising a semiconductor processing tool capable of combining at least one electrical decomposition inhibitor with a metal feature in a semiconductor material to reduce electrical decomposition between metal features in the semiconductor material. (8) In the apparatus of (7) above, wherein the semiconductor material is a lanthanoid system, the sealing mechanism excludes light having a wavelength of about 1.1 μm or less, and the light source generates light having a wavelength of more than about 1.1 μm. The camera detects it. For example, it is also possible to detect the end point of the polishing process of the lanthanum-based object to be polished in the polishing apparatus described above by using light having a wavelength of the region, for example, infrared light.

In the crystalline solid constituting the material of the integrated circuit or the like, the atomic orbital domain actually combines and becomes a continuous "band" of the "crystal" or the electronic energy band. The highest possession band is called the valence band, and the lowest band is called the conduction band. The energy required to excite an electron from the highest point of the valence band to the lowest point of the conduction band is called the energy gap energy (Eg).矽 is Eg=1.12 eV at room temperature, and gallium is Eg=1.42 eV at room temperature. It is known that semiconductor materials such as germanium exhibit photoconductivity, and light irradiation gives sufficient energy to excite electrons to the conduction band to increase the conductivity of the semiconductor. The light energy is related to the frequency or wavelength according to the formula E=hν or E=hc/λ. In the formula, h is the Planck constant, c is the speed of light, ν is the frequency, and λ is the wavelength. In most of the lanthanide semiconductors at room temperature, the light energy required to achieve photoconductivity must be about 1.12 eV, that is, a wavelength of about 1.1 μm or less is necessary. In a gallium semiconductor, photoconductivity requires a wavelength of about 0.9 μm or less. In other semiconductors, Eg is easily obtained from a general reference, and the wavelength can be calculated using the above formula. In the following description, the bismuth-based semiconductor device will be mainly described. However, the present invention is equally applicable to an element made of other semiconductor materials such as gallium, which will be easily understood by those skilled in the art.

The above-described photoconductivity is the basis of the photoelectric effect in the PN junction surface 300 shown in FIG. The n-type semiconductor 320 is doped with a donor impurity such as phosphorus or arsenic which supplies electrons to the ruthenium conduction band to generate an excess negative charge carrier. Therefore, a large number of charge carriers in the n-type semiconductor 320 are negatively charged particles. The p-type semiconductor 310 is doped with an acceptor impurity such as boron that receives electrons from the valence electron band of ruthenium to generate excess holes or positive charge carriers. Therefore, a large number of charge carriers in the p-type semiconductor 310 are positively charged holes. When the PN junction surface 300 is irradiated with photons of light 350 having sufficient energy, in both the p-type 310 and the n-type 320 semiconductor, electrons are excited from the valence electron band to the conduction band, leaving holes. Thus, in the increased positive charge carriers generated in the n-type semiconductor 320, a large amount of charge carriers move toward the positive (hole) side of the p-type 310 of the junction 300. Further, in the thus-increasing negative charge carriers generated in the p-type semiconductor 310, a large amount of charge carriers move toward the n-type 320 side of the negative (electron) junction 300. The movement of the charge carrier produces a photoelectric effect that produces a current source similar to a battery.

When a PN junction functioning as a current source is connected to a metal conductor such as an interconnect 330, 340 exposed to the electrolyte 230, all the elements required for electrical decomposition are complete, and as long as the potential is sufficient, the anode metal component is dissolved. . The electrochemical dissolution of Figure 44 due to the photovoltage is similar to the electrochemical dissolution. In the oxidation reaction of the anode 330, free cations 250 dissolved in the electrolyte 230, and electrons flowing to the cathode 340 via the internal connection to the current source (PN junction 300) are generated. This oxidation reaction causes the most conspicuous sign of electrical decomposition, although it causes dissolution of the anode 330 or asphalt, but must also cause a reduction reaction. The reduction reaction of the cathode combines electrons with reactant 260 in electrolyte 230 to produce a reduced reaction product. It should be noted that, depending on which side of the p-side and the n-side of the PN junction is connected, a certain portion of the metal conductor becomes a cathode, and a certain portion becomes an anode.

Methods and apparatus for eliminating or reducing electrochemical dissolution of global wiring, interconnects, contacts, and other metal features are provided in accordance with suitable embodiments of the present invention that eliminate or reduce electrochemical dissolution. This preferred embodiment reduces dissolution by not exposing the PN junction to light that can cause a photoelectric effect, or preventing oxidation or reduction or oxidation and reduction induced by the photoelectric effect, or by performing both of the above.

Further, as a method of holding the driving portions of the top ring and the top ring, in addition to the above-described manner of holding them at the end of the swing arm (cantilever), a plurality of top rings and a plurality of top rings are driven. The way the drive is held in a carousel. When an embodiment of the present invention is applied to a carousel, it is also possible to provide a polishing apparatus that reduces the difference in measurement results of the current detector between a plurality of polishing apparatuses. These top rings and drive portions constitute a group (grinding device) capable of arranging a plurality of groups on one carousel. With regard to the current value of the motor current of the plurality of driving units (the motor for the top ring), by applying the above-described embodiment, it is possible to realize a polishing apparatus that reduces the difference in measurement results of the current detectors between the plurality of sets of polishing apparatuses.

The carousel will be described with reference to Fig. 45. The carousel is rotatable about a rotating shaft 704, and the top ring motor 114 is attached to the carousel 702. 45 is a schematic side view showing the relationship between the multi-head type top ring 31A supported by the carousel 702 and the top ring motor 114 and the polishing table 30A. As shown in Fig. 45, a plurality of top ring units are provided in one polishing table 30A. It is also possible to provide a top ring on the carousel, and the table can be more than one. It is also possible to provide a plurality of top rings on the carousel and a plurality of stages. In this case, it is also possible to have one top ring on one stage or a plurality of top rings on one stage. The carousel is moved by rotation or the like, and the top ring can be moved to another stage and ground in the next stage.

The carousel 702 is rotatable. A rotating mechanism is provided in the vicinity of the center portion of the carousel 702. The carousel 702 is supported by a post (not shown). The carousel 702 is supported by a rotating main shaft that is attached to a motor (not shown) of the strut. Therefore, the carousel 702 can be rotated about the vertical rotating shaft core 704 by the rotation of the rotating main shaft. Further, as a method similar to the carousel, for example, a circular guide rail may be used instead of the carousel. A plurality of driving portions (top ring motor 114) are provided on the guide rail. At this time, the drive unit can move on the guide rail.

Next, the polishing apparatus has a carousel that is rotatable about a rotation axis, and an embodiment in which the arm drive unit is attached to the carousel will be described with reference to FIGS. 46 and 47. Fig. 46 is a schematic side view showing a relationship between a multi-head type top ring 31A supported by a carousel 702 and a swing arm 110 and a polishing table 30A, and Fig. 47 is a plan view.

According to the embodiment in which the top ring is attached to the carousel 702 shown in FIG. 46, the following problems can be solved. When the large carousel 702 is provided with a plurality of top rings 31A, as a grinding end point detecting means, unlike the method based on the arm torque, there is a torque variation of the rotary driving motor or the top ring rotating driving motor for monitoring the grinding table. Methods. In these methods, the change in the rotational resistance force (friction force) of the top ring 31A is detected. However, there is a problem of the frictional force detection signal due to the swing of the arm, the fluctuation of the rotation of the top ring, the error caused by the fluctuation of the rotation of the table, etc. In the past, it has been difficult to perform high-accuracy end point detection. Further, when there are a plurality of top rings on one rotating table, the rotation of the table is complicatedly changed by the influence of the plurality of top rings 31A. Therefore, it has been difficult to obtain a correct frictional force variation of each of the top rings 31A.

In the polishing apparatus of Fig. 46, a swing arm 110 is attached to the carousel 702, and a top ring 31A is attached to the swing arm 110. A unit (hereinafter, referred to as a "TR unit") composed of one swing arm 110 and one top ring 31A has a case where one is provided on the carousel 702 and a case where a plurality of pieces are provided (multi-head type). Fig. 46 shows a case where a plurality of carousels 702 are provided.

Further, in FIGS. 45 and 46, the top ring motor 114 is disposed on the upper side of the swing arm 110, and as shown by a broken line in FIG. 46, the top ring motor 114a may be disposed on the lower side of the swing arm 110. Further, when one of the polishing tables 30A shown in Fig. 45 has a plurality of top rings 31A, the swinging direction or moving direction of the plurality of top rings 31A needs to be moved so that the plurality of top rings 31A do not interfere with each other. For example, in a case where the plurality of top rings 31A are moved closer to each other with an arrangement of possibility of interference, the movements are not brought close to each other, or are prevented from moving by moving in the same direction.

As other embodiments, the swing arm 110 may not move on the track. For example, the polishing apparatus includes a support frame, a rail attached to the support frame to define a conveyance path of the top ring motor 114, and a conveyance unit that conveys the top ring motor 114 along a path defined by the rail. Combined with the track and movable along the track.

A linear motor drive method can be used for the rail and the mechanism (transport portion) that moves along the rail. In addition, it can be a rail mechanism using a motor and a bearing. As another way, there is a way in which the track itself can be rotated. In this manner, the track itself rotates so that the top ring can move to other stations. At this time, a small amount of movement adjustment is performed by the conveyance unit.

In FIGS. 45 and 46, a mechanism (transport portion) that linearly moves by a linear motor drive method can be used instead of the swing arm 110. As the direction of linear movement, there is a direction of movement in one direction on the radius between the center 704 and the end of the carousel 702. Alternatively, the mechanism that moves in the X direction shown in FIG. 47, the mechanism that moves in the Y direction, and the mechanism that moves in the Z direction can perform the movement in which the moving directions are combined. The combination of directions is not (X direction or Y direction) + Z direction, X direction, other directions in the Y direction, and the like.

In the embodiment shown in Figs. 45 to 47, the arm or the conveying portion is swung or moved, and is polished while swinging or moving. When the arm or the conveying portion is swung or moved, the motor current signal changes even when the frictional force does not change during polishing. At this time, the embodiment shown after FIG. 16 is effective. The embodiment shown in FIG. 16 can detect a change in the frictional force caused by a change in the material of the surface of the semiconductor wafer 16 and a change in the circuit pattern accompanying the polishing. End point detection is performed based on the detected change in friction.

The embodiments of the present invention have been described above, and the embodiments of the present invention have been made to facilitate the understanding of the present invention, and do not limit the present invention. Modifications and improvements can be made without departing from the spirit and scope of the invention. In addition, within the scope of at least a part of the above-mentioned problems, or in the range of at least a part of the effects, the components of the scope of the patent application and the components described in the specification can be arbitrarily combined or omitted.

61a‧‧‧ bottom part

61b‧‧‧Magnetic Department

61c‧‧‧Walls

61d‧‧‧ peripheral magnetic body

860, 862‧‧ ‧ excitation coil

864, 866‧‧‧ detection coil

868, 870‧‧‧ virtual coil

876, 878‧‧‧ magnetic field

882‧‧‧Initial grinding rate formula

884‧‧‧ grinding end point

1 is a plan view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a perspective view schematically showing a first polishing unit. Fig. 3 is a cross-sectional view schematically showing the structure of a top ring. 4 is a cross-sectional view schematically showing another structural example of the top ring. Fig. 5 is a cross-sectional view for explaining a mechanism for rotating and swinging the top ring. Fig. 6 is a cross-sectional view schematically showing an internal structure of a polishing table. Fig. 7 is a schematic view showing a polishing table having an optical detector. Fig. 8 is a schematic view showing a polishing table having a microwave detector. Fig. 9 is a perspective view showing the dresser. Fig. 10 (a) is a perspective view showing the atomizer, and Fig. 10 (b) is a schematic view showing a lower portion of the arm. Fig. 11 (a) is a side view showing the internal structure of the atomizer, and Fig. 11 (b) is a plan view showing the atomizer. Fig. 12 (a) is a plan view showing the cleaning unit, and Fig. 12 (b) is a side view showing the cleaning unit. Fig. 13 is a schematic view showing an example of a washing line. Fig. 14 is a longitudinal sectional view showing the upper drying module. Fig. 15 is a plan view showing the upper drying module. FIG. 16 is a schematic view showing an overall configuration of a polishing apparatus according to an embodiment of the present invention. Fig. 17 is a view showing a configuration of an eddy current detector, Fig. 17 (a) is a block diagram showing a configuration of an eddy current detector, and Fig. 17 (b) is an equivalent circuit diagram of an eddy current detector. FIG. 18 is a schematic view showing a configuration example of an eddy current detector according to the present embodiment. 19 is a schematic view showing an example of connection of an exciting coil in an eddy current detector. Fig. 20 is a view showing a magnetic field in an eddy current detector. Fig. 21 is a schematic view showing another example of connection of the exciting coil in the eddy current detector. Fig. 22 is a view showing a magnetic field in an eddy current detector. Fig. 23 is a schematic view showing an example of connection of each coil in the eddy current detector. Fig. 24 is a block diagram showing a synchronous detection circuit of an eddy current detector. Fig. 25 shows an example of a method of performing end point detection using an eddy current type detector. FIG. 26 shows an example in which the peripheral magnetic body is not provided in the peripheral portion of the bottom surface portion and surrounds the wall portion of the core portion. FIG. 27 shows an example in which the peripheral magnetic body is not provided in the peripheral portion of the bottom surface portion and surrounds the wall portion of the core portion. FIG. 28 shows an example in which the peripheral magnetic body is not provided in the peripheral portion of the bottom surface portion and surrounds the wall portion of the core portion. Fig. 29 is a block diagram showing a method of detecting arm torque by an arm torque detecting unit. Fig. 30 is a view showing another embodiment having an optical detector. Fig. 31 is a view showing another embodiment having an optical detector. 32 is a view showing an example of a case where the film structure of the end portion is a mixed state of a metal and an insulating film. 33 is a view showing an example of a case where the film structure of the end portion is a mixed state of a metal and an insulating film. FIG. 34 is a view showing an example of a case where the film structure of the end portion is a mixed state of a metal and an insulating film. Fig. 35 is a view showing an embodiment as a modification of Fig. 16; Fig. 36 is a view showing control of the entire control unit; Fig. 37 is a view showing the configuration of another embodiment. Fig. 38 is a view showing a modification of the embodiment of Fig. 37; 39 is a view showing another schematic configuration example of a detector of the polishing apparatus of the present invention, wherein FIG. 39(a) is a plan view and FIG. 39(b) is a side cross-sectional view. 40 is a view showing an example of a schematic configuration of another embodiment. 41 is a view showing a schematic configuration example of another embodiment. 42 is a view showing a schematic configuration example of a polishing apparatus according to another embodiment. Figure 43 is a view showing the arrow Y-Y of Figure 42. Fig. 44 is a cross-sectional view showing an example of a PN connection. Fig. 45 is a schematic side view showing the relationship between a multi-head type top ring supported by a carousel and a polishing table. Fig. 46 is a schematic side view showing a relationship between a multi-head type top ring supported by a carousel having an arm driving portion and a polishing table. Figure 47 is a plan view of the embodiment shown in Figure 46. FIG. 48 is a view for explaining an embodiment in which the intensity of a magnetic field generated by the exciting coil is changed when the conductivity of the semiconductor wafer changes. FIG. 49 shows an example in which the peripheral magnetic body is not provided in the peripheral portion of the bottom surface portion and surrounds the wall portion of the core portion. FIG. 50 shows an example in which the peripheral magnetic body is not provided in the peripheral portion of the bottom surface portion and surrounds the wall portion of the core portion.

Claims (18)

A magnetic element comprising: a bottom magnetic body; a central magnetic body disposed at a center of the bottom magnetic body; a peripheral magnetic body, the peripheral magnetic body being disposed at a periphery of the bottom magnetic body The inner coil is disposed on an outer circumference of the central magnetic body and capable of generating a magnetic field; and an outer coil disposed on an outer circumference of the peripheral magnetic body and capable of generating a magnetic field. The magnetic element according to claim 1, wherein the bottom magnetic body has a columnar shape, and the peripheral magnetic body is disposed at both ends of the columnar shape. The magnetic element according to claim 1, wherein the peripheral magnetic body is provided in plural at a peripheral portion of the bottom magnetic body. The magnetic element according to claim 1, wherein the peripheral magnetic body is a wall portion provided at a peripheral portion of the bottom magnetic body to surround the central magnetic body. The magnetic element according to any one of claims 1 to 4, characterized in that the inner coil and the outer coil can be electrically connected in parallel. The magnetic element according to any one of claims 1 to 5, characterized in that the direction of the magnetic field generated by the inner coil in the central magnetic body and the outer coil are generated in the central magnetic body The direction of the magnetic field can be the same. The magnetic element according to any one of claims 1 to 6, further comprising a detecting coil disposed on an outer circumference of the central magnetic body and/or an outer circumference of the peripheral magnetic body, Ability to detect magnetic fields. The magnetic element according to claim 7, comprising a virtual coil disposed on an outer circumference of the central magnetic body and/or an outer circumference of the peripheral magnetic body, capable of detecting a magnetic field. The magnetic element according to any one of claims 1 to 6, characterized by comprising a detecting coil and a virtual coil disposed on an outer circumference of the central magnetic body, capable of detecting a magnetic field, the virtual coil configuration A magnetic field can be detected on the outer circumference of the central magnetic body. An eddy current type detector characterized by having the magnetic element according to any one of claims 7 to 9. A polishing apparatus comprising: a polishing table to which a polishing pad for polishing an object to be polished can be attached; and a driving portion capable of driving the polishing table to rotate; and a holding portion capable of rotating the holding portion Holding the object to be polished and pressing to the polishing pad; the eddy current detector according to claim 10, wherein the eddy current detector is disposed inside the polishing table by the detecting The coil is capable of detecting an eddy current formed by the inner coil and the outer coil on the object to be polished in accordance with rotation of the polishing table; and an end point detecting portion capable of detecting from the end The eddy current detection indicates the end of the grinding of the end of the grinding of the object to be polished. The polishing apparatus according to claim 11, wherein the end point detecting unit determines a polishing rate of the object to be polished from the detected eddy current, and calculates the pairing rate at the polishing rate. The polishing amount at the time of polishing the object to be polished is described, so that the polishing end point can be detected. The polishing apparatus according to claim 12, wherein the end point detecting unit compares a film thickness-related data obtained from the eddy current with data relating to a film thickness predicted from the polishing rate, When the result of the comparison is larger than the specified value, the data relating to the film thickness obtained from the eddy current can be not used. The polishing apparatus according to claim 12, wherein the end point detecting unit is capable of detecting the polishing end point from the expected amount of polishing and a threshold value related to a film thickness corresponding to the polishing end point. A polishing method for polishing a polishing pad and an object to be polished disposed opposite to the polishing pad, characterized by: a step of holding the polishing pad by a polishing table; a step of the polishing table; a step of rotationally driving a holding portion for holding the object to be pressed and pressed against the polishing pad; and configuring an eddy current as described in claim 10 in the interior of the polishing table a detector for detecting, by the detecting coil, an eddy current formed by the inner coil and the outer coil on the object to be polished in association with rotation of the polishing table; The eddy current detection step indicates a polishing end point of the end of the polishing of the object to be polished. The polishing method according to claim 15, wherein the strength of the magnetic field generated by the inner coil and/or the outer coil is changed when the conductivity of the object to be polished changes. The polishing method according to claim 15 or 16, wherein a plurality of eddy current detectors as described in claim 10, the plurality of vortices are disposed inside the polishing table. The detection sensitivities of current detectors are different from each other. A computer-readable recording medium having a program for causing a computer to function as an end point detecting unit means and a control means for controlling a polishing apparatus for polishing an object to be polished The polishing apparatus includes a polishing table, a polishing pad for polishing the object to be polished, which can be attached to the polishing table, a driving portion that can drive the polishing table to rotate, and a holding portion that can hold the polishing portion The eddy current type detector according to claim 10, wherein the eddy current type detector is disposed inside the polishing table, and the detection coil can be used Detecting an eddy current formed by the inner coil and the outer coil on the object to be polished in accordance with rotation of the polishing table, the end point detecting unit means being capable of detecting the eddy current from the detected The polishing end point indicating the end of the polishing of the object to be polished, and the control means controls the polishing by the polishing device.