TW201931458A - Peeling apparatus capable of easily peeling a wafer from an ingot with a peeling layer as a starting point, and removing the peeled wafer from the peeling surface of a peeled wafer - Google Patents
Peeling apparatus capable of easily peeling a wafer from an ingot with a peeling layer as a starting point, and removing the peeled wafer from the peeling surface of a peeled wafer Download PDFInfo
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
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Abstract
Description
發明領域 本發明是有關於一種從已形成剝離層之晶錠將要生成之晶圓剝離的剝離裝置。FIELD OF THE INVENTION The present invention relates to a stripping device for stripping a wafer to be generated from a crystal ingot having a stripped layer.
發明背景 IC、LSI、LED等元件，是在以Si(矽)或Al2 O3 (藍寶石)等作為素材之晶圓的正面積層功能層並藉由分割預定線區劃而形成。又，功率元件或LED等是在以單晶SiC(碳化矽)為素材之晶圓的正面積層功能層並藉由分割預定線區劃而形成。形成有元件之晶圓，是藉由切割裝置、雷射加工裝置對分割預定線施行加工而分割成一個個的元件，並將所分割之各元件利用於行動電話或個人電腦等電氣機器上。BACKGROUND OF THE INVENTION Elements such as ICs, LSIs, and LEDs are formed on a positive-area layer functional layer of a wafer using Si (silicon) or Al 2 O 3 (sapphire) as a material, and are divided by a predetermined line division. In addition, a power element, an LED, or the like is formed on a positive-area functional layer of a wafer using single crystal SiC (silicon carbide) as a material and is divided by a predetermined line division. The wafer on which the components are formed is processed by a dicing device or a laser processing device to divide a predetermined dividing line into individual components, and the divided components are used in electrical equipment such as a mobile phone or a personal computer.
形成有元件的晶圓一般是藉由將圓柱形狀的晶錠以線鋸薄薄地切斷而生成。已切斷之晶圓的正面及背面是藉由研磨來加工成鏡面(參照例如專利文獻1)。但，當將晶錠以線鋸切斷，並研磨已切斷之晶圓的正面及背面時，變得要將晶錠的大部分(70~80%)捨棄，而有不符經濟效益的問題。尤其在單晶SiC晶錠中，在下述情形中具有課題：由於硬度高以線鋸進行的切斷較困難而需要相當的時間所以生產性差，並且晶錠的單價高而要有效率地生成晶圓。The wafer on which the element is formed is generally produced by thinly cutting a cylindrical ingot with a wire saw. The front and back surfaces of the cut wafer are polished to a mirror surface by polishing (see, for example, Patent Document 1). However, when the ingot is cut with a wire saw, and the front and back surfaces of the cut wafer are polished, it becomes necessary to discard most of the ingot (70 ~ 80%), which is inconsistent with economic benefits. . In particular, in a single crystal SiC ingot, there is a problem in that it is difficult to cut by a wire saw with high hardness and requires considerable time, so productivity is poor, and the unit price of the ingot is high, and crystals must be efficiently formed. circle.
於是，本案申請人提出了下述的技術方案：將對單晶SiC具有穿透性之波長的雷射光線的聚光點定位於單晶SiC晶錠的內部，並對單晶SiC晶錠照射雷射光線而在切斷預定面形成剝離層，且以剝離層為起點來從單晶SiC晶錠剝離晶圓(參照例如專利文獻2)。 先前技術文獻 專利文獻Therefore, the applicant of the present case proposed the following technical solution: positioning the condensing point of the laser light having a wavelength penetrating to the single crystal SiC inside the single crystal SiC ingot, and irradiating the single crystal SiC ingot A laser beam forms a peeling layer on a predetermined cut surface, and the wafer is peeled from the single crystal SiC ingot using the peeling layer as a starting point (see, for example, Patent Document 2). Prior Art Literature Patent Literature
專利文獻1：日本專利特開2000-94221號公報 專利文獻2：日本專利特開2016-111143號公報Patent Document 1: Japanese Patent Laid-Open No. 2000-94221 Patent Document 2: Japanese Patent Laid-Open No. 2016-111143
發明概要 發明欲解決之課題 然而，以剝離層為起點來從晶錠剝離晶圓是困難的且生產效率差，並且有下述問題：SiC分離為Si及C之剝離屑從已剝離之晶圓的剝離面落下而產生污染。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, it is difficult to peel a wafer from an ingot with a peeling layer as a starting point, and the production efficiency is poor, and there are the following problems: SiC is separated into Si and C. The peeling surface is dropped and pollution occurs.
有鑒於上述事實而作成之本發明的課題在於提供一種剝離裝置，該剝離裝置能夠以剝離層為起點而容易地從晶錠剝離晶圓，並且可從已剝離之晶圓的剝離面去除剝離屑。 用以解決課題之手段An object of the present invention, which has been made in view of the above-mentioned facts, is to provide a peeling device that can easily peel a wafer from an ingot with a peeling layer as a starting point, and can remove peeling scraps from the peeling surface of a peeled wafer . Means to solve the problem
為解決上述課題，本發明所提供的是以下的剝離裝置。亦即，一種剝離裝置，是從晶錠之端面起算將對晶錠具有穿透性之波長的雷射光線的聚光點定位於相當於要生成之晶圓之厚度的深度來照射雷射光線，而從已形成剝離層之晶錠將要生成之晶圓剝離，該剝離裝置至少由下列所構成：保持設備，保持晶錠；超音波設備，對保持於該保持設備之晶錠賦與超音波以刺激該剝離層；及剝離設備，具備保持部及環形壁，該保持部是吸引保持要生成之晶圓，該環形壁是自該保持部突出而圍繞要生成之晶圓的外周，於該環形壁之內側形成有複數個噴射口，該等噴射口是朝向已從晶錠剝離之晶圓的剝離面噴射洗淨水來進行洗淨。To solve the above problems, the present invention provides the following peeling device. That is, a stripping device is located from the end face of the ingot to position the light-condensing point of the laser light having a wavelength penetrating to the ingot at a depth corresponding to the thickness of the wafer to be generated to irradiate the laser light. And peeling off the wafer to be generated from the ingot having formed the peeling layer, the peeling device is composed of at least the following: a holding device, which holds the ingot; and an ultrasonic device, which gives an ultrasonic wave to the ingot held by the holding device. A peeling device is provided to stimulate the peeling layer; and a peeling device is provided with a holding portion for attracting and holding a wafer to be generated, and the ring wall protrudes from the holding portion and surrounds an outer periphery of the wafer to be generated. A plurality of spraying ports are formed on the inner side of the annular wall, and the spraying ports are sprayed with washing water toward the peeling surface of the wafer that has been peeled from the ingot for cleaning.
較佳的是，從該噴射口所噴射而對保持於該保持部之晶圓的剝離面進行洗淨的洗淨水是在中央部合流而垂下，以洗淨位於保持於該保持部之晶圓的正下方之晶錠的剝離面。較合宜的是，晶錠是具有c軸及相對於c軸而正交之c面的單晶SiC晶錠，該剝離層是將對單晶SiC具有穿透性之波長的雷射光線的聚光點定位於距單晶SiC晶錠之端面相當於要生成之晶圓的厚度的深度，且是由改質部及裂隙所構成，其中該改質部是對單晶SiC晶錠照射雷射光線而使SiC分離為Si及C而成，該裂隙是從改質部於c面等向性地形成。較理想的是，晶錠是c軸相對於端面之垂直線傾斜而在c面與端面形成有偏角之單晶SiC晶錠，該剝離層是如下之剝離層：在與形成有偏角之方向正交的方向上連續地形成改質部，並從改質部於c面等向性地生成裂隙，且將單晶SiC晶錠與聚光點朝形成有偏角的方向在不超過裂隙之寬度的範圍內相對地分度進給，以在與形成有偏角之方向正交的方向上連續地形成改質部，且從改質部於c面等向性地依序生成裂隙。 發明效果Preferably, the washing water sprayed from the spray port to clean the peeling surface of the wafer held by the holding portion is converged at the central portion and hangs down to wash the crystal located at the holding portion. The peeling surface of the ingot immediately below the circle. Preferably, the ingot is a single-crystal SiC ingot having a c-axis and a c-plane orthogonal to the c-axis, and the peeling layer is a concentration of laser light having a wavelength penetrating to the single-crystal SiC. The light spot is positioned at a depth from the end face of the single crystal SiC ingot corresponding to the thickness of the wafer to be generated, and is composed of a modified portion and a crack, wherein the modified portion is irradiated with laser light to the single crystal SiC ingot The SiC is separated into Si and C by light, and the crack is formed isotropically on the c-plane from the modified portion. Ideally, the ingot is a single-crystal SiC ingot with the c-axis inclined with respect to the vertical line of the end surface and an off-angle formed between the c-plane and the end surface. The peeling layer is a peeling layer as follows: Modified parts are continuously formed in a direction orthogonal to the direction, and cracks are formed isotropically from the modified parts on the c-plane, and the single crystal SiC ingot and the condensing point are formed so that the deflection angle does not exceed the cracks. Within the range of the width, the feed is relatively indexed to continuously form the modified portion in a direction orthogonal to the direction in which the deflection angle is formed, and cracks are sequentially generated isotropically from the modified portion on the c-plane. Invention effect
本發明提供之剝離裝置，由於至少是由下列所構成：保持設備，保持晶錠；超音波設備，對保持於該保持設備之晶錠賦與超音波以刺激該剝離層；及剝離設備，具備保持部及環形壁，該保持部是吸引保持要生成之晶圓，該環形壁是自該保持部突出而圍繞要生成之晶圓的外周，且於該環形壁之內側形成有複數個噴射口，該等噴射口是朝向從晶錠剝離之晶圓的剝離面噴射洗淨水來進行洗淨，因此能夠以剝離層為起點而容易地從晶錠剝離晶圓，並且可以洗淨已剝離之晶圓的剝離面並去除剝離屑。The peeling device provided by the present invention is composed of at least the following: a holding device that holds an ingot; an ultrasonic device that applies an ultrasonic wave to the ingot held by the holding device to stimulate the peeling layer; and a peeling device having: A holding portion and an annular wall that attracts and holds a wafer to be generated, the annular wall protrudes from the holding portion and surrounds an outer periphery of the wafer to be generated, and a plurality of ejection ports are formed inside the annular wall These spray ports are sprayed with washing water toward the peeling surface of the wafer peeled from the ingot, so the wafer can be easily peeled from the ingot starting from the peeling layer, and the peeled wafer can be cleaned. The peeling side of the wafer and remove the peeling debris.
用以實施發明之形態 以下，針對依照本發明所構成的剝離裝置的實施形態邊參照圖式邊進行說明。Embodiments for Carrying Out the Invention Embodiments of the peeling device constructed in accordance with the present invention will be described below with reference to the drawings.
圖1所示之剝離裝置2包含：保持設備4，保持晶錠；超音波設備6，對保持於保持設備4之晶錠賦與超音波以刺激剝離層；水供給設備8，向要生成之晶圓及超音波設備6之間供給水；及剝離設備10，吸引保持要生成之晶圓而自晶錠將要生成之晶圓剝離，並且對已剝離之晶圓的剝離面進行洗淨。The peeling device 2 shown in FIG. 1 includes: a holding device 4 to hold a crystal ingot; an ultrasonic device 6 to apply ultrasonic waves to the crystal ingot held on the holding device 4 to stimulate the peeling layer; and a water supply device 8 to the Water is supplied between the wafer and the ultrasonic equipment 6; and the stripping equipment 10 attracts and holds the wafer to be generated and strips the wafer to be generated from the ingot, and cleans the stripped surface of the wafer that has been stripped.
參照圖1及圖2說明保持設備4。圖示之實施形態中的保持設備4具備：圓筒狀的基台12、旋轉自如地搭載於基台12之上表面的圓筒狀的保持台14、及以通過保持台14之直徑方向中心並在上下方向上延伸的軸線為中心來使保持台14旋轉的馬達(未圖示)。保持設備4可以利用適當之接著劑(例如環氧樹脂系接著劑)來保持已固定於保持台14之上表面的晶錠。或者，保持設備4亦可為下述之構成：將連接於吸引設備(未圖示)之多孔質的吸附夾頭(未圖示)配置於保持台14之上端部分，並以吸引設備在吸附夾頭的上表面生成吸引力，藉此吸引保持晶錠。The holding device 4 will be described with reference to FIGS. 1 and 2. The holding device 4 in the illustrated embodiment includes a cylindrical base table 12, a cylindrical holding table 14 rotatably mounted on the upper surface of the base table 12, and a center passing in the diameter direction of the holding table 14. A motor (not shown) that rotates the holding table 14 with an axis extending in the vertical direction as a center. The holding device 4 can hold an ingot that has been fixed on the upper surface of the holding table 14 with an appropriate adhesive (for example, an epoxy-based adhesive). Alternatively, the holding device 4 may have a structure in which a porous suction chuck (not shown) connected to a suction device (not shown) is arranged at an upper end portion of the holding table 14 and the suction device is used for suction The upper surface of the chuck generates an attractive force, thereby attracting and holding the ingot.
圖示之實施形態中的剝離裝置2更包含使超音波設備6、水供給設備8、及剝離設備10在圖1中朝以箭頭Y表示之Y軸方向移動的Y軸方向移動機構16。Y軸方向移動機構16包含：形成有在Y軸方向上延伸之長方形狀的引導開口18a之長方體狀的框體18、於框體18的內部在Y軸方向上延伸的第一滾珠螺桿(未圖示)、自連結於第一滾珠螺桿之基端部在圖1中朝以箭頭X表示之X軸方向延伸的第一移動片20、連結於第一滾珠螺桿之一端部的第一馬達22、於框體18之內部在Y軸方向上延伸的第二滾珠螺桿(未圖示)、自連結於第二滾珠螺桿之基端部朝X軸方向延伸的第二移動片24、及連結於第二滾珠螺桿之一端部的第二馬達26。並且，Y軸方向移動機構16是藉由第一滾珠螺桿而將第一馬達22的旋轉運動轉換為直線運動並傳達至第一移動片20，而使第一移動片20沿著引導開口18a在Y軸方向上移動，並且藉由第二滾珠螺桿而將第二馬達26之旋轉運動轉換為直線運動並傳達至第二移動片24，而使第二移動片24沿著引導開口18a在Y軸方向上移動。再者，X軸方向與Y軸方向為正交，且X軸方向及Y軸方向所規定的平面實質上是水平的。The peeling device 2 in the illustrated embodiment further includes a Y-axis direction moving mechanism 16 that moves the ultrasonic device 6, the water supply device 8, and the peeling device 10 in the Y-axis direction indicated by an arrow Y in FIG. The Y-axis direction moving mechanism 16 includes a rectangular parallelepiped frame 18 formed with a rectangular guide opening 18a extending in the Y-axis direction, and a first ball screw (not shown) extending in the Y-axis direction inside the frame 18. (Illustrated), a first moving piece 20 extending from the base end portion of the first ball screw in the X-axis direction indicated by arrow X in FIG. 1, and a first motor 22 connected to one end portion of the first ball screw A second ball screw (not shown) extending in the Y-axis direction inside the housing 18, a second moving piece 24 extending in the X-axis direction from a base end portion connected to the second ball screw, and connected to A second motor 26 at one end of the second ball screw. In addition, the Y-axis direction moving mechanism 16 converts the rotary motion of the first motor 22 into a linear motion by a first ball screw and transmits the linear motion to the first moving piece 20, so that the first moving piece 20 moves along the guide opening 18a. It moves in the Y-axis direction, and the rotary motion of the second motor 26 is converted into a linear motion by a second ball screw and transmitted to the second moving piece 24, so that the second moving piece 24 is along the guide opening 18a in the Y-axis Move in the direction. In addition, the X-axis direction and the Y-axis direction are orthogonal, and a plane defined by the X-axis direction and the Y-axis direction is substantially horizontal.
在圖示之實施形態中，是如圖1所示，於第一移動片20之前端下表面連接有朝下方延伸之圓柱狀的第一昇降設備28，且於第一昇降設備28之下端連接有圓柱狀的超音波設備6。因此，藉由第一移動片20在Y軸方向上移動，而使第一昇降設備28及超音波設備6形成為在Y軸方向上移動。可由例如具有滾珠螺桿及馬達之電動汽缸所構成的第一昇降設備28，是藉由使超音波設備6昇降並且在任意的位置上停止，而使超音波設備6之下側的圓形狀端面6a面對於要生成之晶圓。超音波設備6是形成為由壓電陶瓷等所形成，以振盪產生超音波。In the illustrated embodiment, as shown in FIG. 1, a cylindrical first lifting device 28 extending downward is connected to the lower surface of the front end of the first moving piece 20, and is connected to the lower end of the first lifting device 28. There are cylindrical ultrasonic devices 6. Therefore, by moving the first moving sheet 20 in the Y-axis direction, the first lifting device 28 and the ultrasonic device 6 are formed to move in the Y-axis direction. The first lifting device 28 which can be constituted by, for example, an electric cylinder having a ball screw and a motor, is a circular end surface 6a on the lower side of the ultrasonic device 6 by lifting and lowering the ultrasonic device 6 and stopping at an arbitrary position. Face to the wafer to be generated. The ultrasonic device 6 is formed by a piezoelectric ceramic or the like to generate an ultrasonic wave by oscillation.
在圖示之實施形態中是如圖1所示，水供給設備8包含：附設於第一移動片20之前端上表面的圓筒狀的連接口30、昇降自如地支撐於第一移動片20之前端下表面的噴嘴32、及使噴嘴32昇降之噴嘴昇降機構(未圖示)。因此，可藉由移動第一移動片20，而形成為使水供給設備8在Y軸方向上移動。連接口30是透過適當的供水軟管(未圖示)而連接至水供給源(未圖示)。噴嘴32是與超音波設備6在Y軸方向上隔著間隔並從第一移動片20之前端下表面朝下方延伸，接著朝向超音波設備6且一面稍微朝下方傾斜一面朝Y軸方向延伸。中空狀的噴嘴32是連通於連接口30。可由例如電動汽缸所構成之噴嘴昇降機構，可以藉由使噴嘴32昇降並在任意的位置上停止，而將噴嘴32的出口32a定位於要生成之晶圓與超音波設備6的端面6a之間。並且，水供給設備8是形成為在要生成之晶圓與超音波設備6的端面6a之間，自噴嘴32之出口32a來供給從水供給源供給至連接口30之水並生成水層。In the illustrated embodiment, as shown in FIG. 1, the water supply device 8 includes a cylindrical connection port 30 attached to the upper surface of the front end of the first moving piece 20, and is supported by the first moving piece 20 freely. The nozzle 32 on the lower surface of the front end and a nozzle lifting mechanism (not shown) for lifting and lowering the nozzle 32. Therefore, the first moving piece 20 can be moved to form the water supply device 8 in the Y-axis direction. The connection port 30 is connected to a water supply source (not shown) through an appropriate water supply hose (not shown). The nozzle 32 is spaced apart from the ultrasonic device 6 in the Y-axis direction and extends downward from the lower surface of the front end of the first moving sheet 20, and then faces the ultrasonic device 6 and is inclined slightly downward while extending in the Y-axis direction. . The hollow nozzle 32 communicates with the connection port 30. The nozzle lifting mechanism, which can be constituted by, for example, an electric cylinder, can position the outlet 32a of the nozzle 32 between the wafer to be generated and the end face 6a of the ultrasonic device 6 by lifting and lowering the nozzle 32 and stopping at an arbitrary position. . The water supply device 8 is formed between the wafer to be generated and the end surface 6 a of the ultrasonic device 6, and supplies water from the water supply source to the connection port 30 from the outlet 32 a of the nozzle 32 to generate a water layer.
參照圖1及圖3並進行說明。如圖1所示，於第二移動片24之前端下表面連接有剝離設備10，並形成為藉由第二移動片24在Y軸方向上移動而使剝離設備10在Y軸方向上移動。剝離設備10具備：自第二移動片24之前端下表面朝下方延伸之圓柱狀的第二昇降設備34、連接於第二昇降設備34的下端，以吸引保持用於生成之晶圓的圓板狀的保持部36、及從保持部36之周緣朝下方突出，以圍繞要生成之晶圓的外周的環形壁38。可由例如電動汽缸所構成之第二昇降設備34，是藉由使保持部36及環形壁38昇降並在任意的位置上停止，而使保持部36之下表面接觸於要生成之晶圓。如圖3所示，在保持部36之下表面附設有多孔質的圓板狀吸附夾頭36a，吸附夾頭36a是藉由流路40而連接到吸引源41。於流路40設置有開閉流路40的閥42。於環形壁38之內側在圓周方向上隔著間隔形成有複數個噴射口38a，且各噴射口38a是藉由流路43而連接到洗淨水供給源44。於流路43設置有開閉流路43的閥45。並且，在剝離設備10中，可以藉由在已使保持部36之吸附夾頭36a的下表面接觸於要生成之晶圓的狀態下，藉由吸引源41在吸附夾頭36a之下表面生成吸引力，而以吸附夾頭36a來吸引保持要生成之晶圓。又，剝離設備10可以藉由在以吸附夾頭36a吸引保持晶圓的狀態下藉由第二昇降設備34使保持部36上昇，而從晶錠剝離要生成之晶圓。此外，剝離設備10可以藉由從噴射口38a朝向已從晶錠剝離之晶圓的剝離面噴射洗淨水，而洗淨晶圓的剝離面並從晶圓的剝離面去除剝離屑。A description will be given with reference to FIGS. 1 and 3. As shown in FIG. 1, a peeling device 10 is connected to the lower surface of the front end of the second moving sheet 24, and is formed to move the peeling device 10 in the Y-axis direction by moving the second moving sheet 24 in the Y-axis direction. The peeling device 10 includes a cylindrical second lifting device 34 extending downward from the lower surface of the front end of the second moving sheet 24, and a lower plate connected to the lower end of the second lifting device 34 to attract and hold a disc for generating wafers. The holding portion 36 and the annular wall 38 project downward from the peripheral edge of the holding portion 36 so as to surround the outer periphery of the wafer to be generated. The second lifting device 34, which can be constituted by, for example, an electric cylinder, raises and lowers the holding portion 36 and the annular wall 38 and stops at an arbitrary position, so that the lower surface of the holding portion 36 contacts the wafer to be generated. As shown in FIG. 3, a porous disk-shaped adsorption chuck 36 a is attached to the lower surface of the holding portion 36, and the adsorption chuck 36 a is connected to the suction source 41 through the flow path 40. The flow path 40 is provided with a valve 42 that opens and closes the flow path 40. A plurality of ejection ports 38 a are formed on the inner side of the annular wall 38 at intervals in the circumferential direction, and each of the ejection ports 38 a is connected to the washing water supply source 44 through the flow path 43. The flow path 43 is provided with a valve 45 that opens and closes the flow path 43. Further, in the peeling apparatus 10, the lower surface of the adsorption chuck 36a of the holding portion 36 can be brought into contact with the wafer to be generated, and the suction source 41 can be generated on the lower surface of the adsorption chuck 36a by the suction source 41. The suction chuck 36a is used to attract and hold the wafer to be generated. In addition, the peeling device 10 can lift the holding portion 36 by the second lifting device 34 in a state where the wafer is sucked and held by the suction chuck 36a, and peel the wafer to be generated from the ingot. In addition, the peeling device 10 can spray cleaning water from the ejection port 38a toward the peeling surface of the wafer that has been peeled from the ingot, thereby cleaning the peeling surface of the wafer and removing peeling debris from the peeling surface of the wafer.
圖4中所顯示的是在剝離層形成前之狀態中的晶錠50。圖示之晶錠50是由六方晶體單晶SiC整體形成為圓柱形狀，且具有：圓形狀的第一端面52、與第一端面52相反側之圓形狀的第二端面54、位於第一端面52及第二端面54之間的周面56、自第一端面52至第二端面54的c軸(＜0001＞方向)、及與c軸正交的c面(｛0001｝面)。在圖示之晶錠50中，c軸相對於第一端面52之垂直線58傾斜，且以c面與第一端面52形成有偏角α(例如α＝1、3、6度)。在圖4中以箭頭A表示形成有偏角α之方向。又，在晶錠50的周面56上，形成有表示結晶方位之矩形形狀的第一定向平面60及第二定向平面62。第一定向平面60是與形成偏角α的方向A平行，第二定向平面62是與形成偏角α的方向A正交。如圖4(b)所示，從上方觀看，第二定向平面62之長度L2比第一定向平面60之長度L1短(L2＜L1)。再者，可在形成剝離層後藉由上述的剝離裝置2將晶圓剝離的晶錠，並不限定於上述晶錠50，亦可為例如c軸相對於第一端面之垂直線並未傾斜，且c面與第一端面之偏角為0度(亦即，第一端面之垂直線與c軸為一致)之單晶SiC晶錠、或者亦可是由Si(矽)或GaN(氮化鎵)等之單晶SiC以外的素材所形成的晶錠。Shown in FIG. 4 is the ingot 50 in a state before the release layer is formed. The ingot 50 shown in the figure is formed into a cylindrical shape as a whole by hexagonal crystal single crystal SiC, and has a first end surface 52 having a circular shape, a second end surface 54 having a circular shape opposite to the first end surface 52, and a first end surface. A peripheral surface 56 between 52 and the second end surface 54, a c-axis (<0001> direction) from the first end surface 52 to the second end surface 54, and a c-plane (｛0001｝ plane) orthogonal to the c-axis. In the illustrated ingot 50, the c-axis is inclined with respect to the vertical line 58 of the first end surface 52, and an off angle α (for example, α = 1, 3, 6 degrees) is formed between the c-plane and the first end surface 52. The direction in which the deflection angle α is formed is indicated by an arrow A in FIG. 4. In addition, on the peripheral surface 56 of the ingot 50, a first orientation plane 60 and a second orientation plane 62 having a rectangular shape indicating a crystal orientation are formed. The first orientation plane 60 is parallel to the direction A forming the deflection angle α, and the second orientation plane 62 is orthogonal to the direction A forming the deflection angle α. As shown in FIG. 4 (b), viewed from above, the length L2 of the second orientation plane 62 is shorter than the length L1 of the first orientation plane 60 (L2 <L1). In addition, the ingot that can peel the wafer by the above-mentioned stripping device 2 after forming the stripping layer is not limited to the above-mentioned ingot 50, and may be, for example, that the c-axis is not inclined with respect to the vertical line of the first end surface. And a single-crystal SiC ingot with a deflection angle between the c-plane and the first end face of 0 degrees (that is, the vertical line of the first end face is consistent with the c-axis), or may be made of Si (silicon) or GaN (nitrided Ingots made of materials other than single crystal SiC.
於以上述之剝離裝置2從晶錠50剝離晶圓時，必須在晶錠50形成剝離層，剝離層形成可以使用例如於圖5中顯示一部分之雷射加工裝置64來實施。雷射加工裝置64具備保持被加工物之工作夾台66、及對保持於工作夾台66之被加工物照射脈衝雷射光線LB的聚光器68。構成為在上表面吸引保持被加工物之工作夾台66，是利用旋轉設備(未圖示)而以在上下方向上延伸之軸線作為中心來旋轉，並且以x軸方向移動設備(未圖示)在x軸方向上進退，以y軸方向移動設備(未圖示)在y軸方向上進退。聚光器68包含聚光透鏡(未圖示)，該聚光透鏡是用於將雷射加工裝置64之脈衝雷射光線振盪器(未圖示)所振盪產生之脈衝雷射光線LB聚光並照射於被加工物。再者，x軸方向是圖5中以箭頭x表示之方向，y軸方向是圖5中以箭頭y表示之方向且是正交於x軸方向之方向。x軸方向及y軸方向所規定的平面實質上是水平的。又，圖1中以大寫之X及Y表示的X軸方向及Y軸方向與圖5中以小寫之x及y表示的x軸方向及y軸方向，可為一致亦可為相異。When the wafer is peeled from the ingot 50 by the peeling device 2 described above, it is necessary to form a peeling layer on the ingot 50. The peeling layer can be formed using, for example, a laser processing device 64 which is partially shown in FIG. The laser processing device 64 includes a work clamp 66 that holds a workpiece, and a condenser 68 that irradiates a pulse laser beam LB to the workpiece that is held by the work clamp 66. The work clamp 66 configured to attract and hold a workpiece on the upper surface is rotated by a rotating device (not shown) around an axis extending in the vertical direction as a center, and the device is moved in the x-axis direction (not shown). ) Advance and retreat in the x-axis direction, and move the device (not shown) in the y-axis direction in the y-axis direction. The condenser 68 includes a condenser lens (not shown) for condensing the pulsed laser light LB generated by the pulsed laser light oscillator (not shown) of the laser processing device 64. And irradiate the workpiece. In addition, the x-axis direction is a direction indicated by an arrow x in FIG. 5, and the y-axis direction is a direction indicated by an arrow y in FIG. 5 and is a direction orthogonal to the x-axis direction. The plane defined by the x-axis direction and the y-axis direction is substantially horizontal. In addition, the X-axis direction and Y-axis direction indicated by uppercase X and Y in FIG. 1 may be the same as or different from the x-axis direction and y-axis direction indicated by lowercase x and y in FIG. 5.
參照圖5來繼續進行說明，於晶錠50形成剝離層時，首先是讓晶錠50的其中一個端面(在圖示之實施形態中為第一端面52)朝上，並使晶錠50吸引保持於工作夾台66之上表面。或者，亦可使接著劑(例如環氧樹脂系接著劑)介於晶錠50的另一個端面(在圖示之實施形態中為第二端面54)與工作夾台66的上表面之間，來將晶錠50固定於工作夾台66。其次，以雷射加工裝置64之拍攝設備(未圖示)從晶錠50的上方拍攝晶錠50。接著，依據藉由拍攝設備所拍攝之晶錠50的圖像，以雷射加工裝置64之x軸方向移動設備、y軸方向移動設備及旋轉設備來使工作夾台66移動及旋轉，藉此將晶錠50的方向調整成規定的方向，並且調整晶錠50與聚光器68的xy平面中的位置。在將晶錠50的方向調整成規定的方向時，是如圖5(a)所示，藉由使第二定向平面62與x軸方向一致，以使與形成有偏角α之方向A正交的方向與x軸方向一致，並且使形成有偏角α的方向A與y軸方向一致。接著，以雷射加工裝置64的聚光點位置調整設備(未圖示)使聚光器68昇降，並如圖5(b)所示，將聚光點FP定位在自晶錠50之第一端面52起算到相當於要生成之晶圓的厚度的深度。其次，進行剝離層形成加工，該剝離層形成加工是一邊使工作夾台66在與形成有偏角α之方向A正交的方向一致的x軸方向上移動，一邊從聚光器68將對單晶SiC具有穿透性之波長的脈衝雷射光線LB照射於晶錠50。進行剝離層形成加工後，如圖6(a)及圖6(b)所示，可在與形成有偏角α之方向A正交的方向上連續地形成改質部70，並且生成從改質部70沿著c面等向性地延伸的裂隙72，其中前述改質部70是藉由脈衝雷射光線LB之照射使SiC分離成Si(矽)及C(碳)，且接著照射之脈衝雷射光線LB被之前所形成的C吸收而SiC連鎖地分離成Si及C而成。With reference to FIG. 5, the description is continued. When forming a peeling layer on the ingot 50, firstly, one of the end faces of the ingot 50 (the first end face 52 in the illustrated embodiment) faces upward, and the ingot 50 is attracted. It is held on the upper surface of the work clamp 66. Alternatively, an adhesive (for example, an epoxy-based adhesive) may be interposed between the other end surface of the ingot 50 (the second end surface 54 in the illustrated embodiment) and the upper surface of the work clamp 66. Then, the ingot 50 is fixed to the work clamp 66. Next, the ingot 50 is photographed from above the ingot 50 by a photographing device (not shown) of the laser processing device 64. Then, according to the image of the ingot 50 captured by the photographing equipment, the work processing table 66 is moved and rotated by the x-axis moving device, the y-axis moving device, and the rotating device of the laser processing device 64, thereby The direction of the ingot 50 is adjusted to a predetermined direction, and the positions in the xy plane of the ingot 50 and the condenser 68 are adjusted. When the direction of the ingot 50 is adjusted to a predetermined direction, as shown in FIG. 5 (a), the second orientation plane 62 is aligned with the x-axis direction so as to be positive with the direction A in which the deflection angle α is formed. The direction of intersection coincides with the x-axis direction, and the direction A in which the deflection angle α is formed coincides with the y-axis direction. Next, the condenser 68 is raised and lowered by a focusing point position adjusting device (not shown) of the laser processing device 64, and as shown in FIG. 5 (b), the focusing point FP is positioned at the first position from the crystal ingot 50. One end face 52 is counted to a depth corresponding to the thickness of the wafer to be produced. Next, a peeling layer forming process is performed. The peeling layer forming process moves the work clamp table 66 in the x-axis direction that is aligned with the direction orthogonal to the direction A in which the deflection angle α is formed, while the The ingot 50 is irradiated with a pulsed laser beam LB of a single crystal SiC having a wavelength of transmissiveness. After the peeling layer forming process is performed, as shown in FIGS. 6 (a) and 6 (b), the modified portion 70 can be continuously formed in a direction orthogonal to the direction A where the deflection angle α is formed, and the modified portion 70 can be generated. The crack 72 extending isotropically along the c-plane of the mass portion 70, wherein the aforementioned modified portion 70 separates SiC into Si (silicon) and C (carbon) by irradiation with pulsed laser light LB, and then irradiates it The pulsed laser light LB is absorbed by the C formed before, and SiC is separated into Si and C in a chain.
參照圖5及圖6來繼續進行說明，接續於剝離層形成加工，在與形成有偏角α之方向A一致的y軸方向上，於不超過裂隙72的寬度的範圍內將工作夾台66對聚光點FP相對地分度進給相當於規定分度量Li。並且，藉由交互地重複進行剝離層形成加工與分度進給，以在形成有偏角α之方向A上隔著規定分度量Li的間隔來形成複數個改質部70，其中該等改質部70是在與形成有偏角α之方向A正交的方向上連續地延伸，並且形成為依次生成從改質部70沿著c面等向性地延伸的裂隙72，且讓在形成有偏角α之方向A上相鄰的裂隙72與裂隙72在上下方向上觀看為重疊。藉此，可以在距晶錠50之第一端面52相當於要生成之晶圓的厚度之深度，形成由複數個改質部70及裂隙72所構成且用於從晶錠50剝離晶圓之強度已降低的剝離層74。又，剝離層74的形成可以在例如以下的加工條件下進行。 脈衝雷射光線之波長 ：1064nm 重複頻率 ：60kHz 平均輸出 ：1.5W 脈衝寬度 ：4ns 聚光點之直徑 ：3μm 聚光透鏡之數值孔徑(NA)：0.65 聚光點之上下方向位置 ：距晶錠第一端面300μm 進給速度 ：200mm/秒 分度量 ：250~400μm5 and FIG. 6, the description is continued. Following the peeling layer forming process, the work clamp 66 is set within a range not exceeding the width of the crack 72 in the y-axis direction that is consistent with the direction A in which the deflection angle α is formed. The relative indexing of the light-condensing point FP corresponds to a predetermined index of measurement Li. In addition, by repeatedly performing the peeling layer forming process and the indexing feed alternately, a plurality of modified sections 70 are formed in the direction A in which the deflection angle α is formed with a predetermined interval of the measurement index Li, where the modified sections 70 The mass portion 70 extends continuously in a direction orthogonal to the direction A where the deflection angle α is formed, and is formed so as to sequentially generate cracks 72 extending isotropically from the modified portion 70 along the c-plane, and let The slits 72 and the slits 72 adjacent to each other in the direction A with the off-angle α overlap when viewed in the up-down direction. Thereby, at a depth corresponding to the thickness of the wafer to be generated from the first end surface 52 of the ingot 50, a plurality of modified portions 70 and cracks 72 can be formed and used to peel the wafer from the ingot 50. The peeled layer 74 having reduced strength. The formation of the release layer 74 can be performed under the following processing conditions, for example. Wavelength of pulsed laser light: 1064nm Repetition frequency: 60kHz Average output: 1.5W Pulse width: 4ns Diameter of the focusing point: 3μm Numerical aperture (NA) of the condenser lens: 0.65 Position above and below the focusing point: away from the ingot 300μm first end feed rate: 200mm / second minute measurement: 250 ~ 400μm
針對使用上述之剝離裝置2而從形成有剝離層74之晶錠50剝離晶圓的剝離方法進行說明。在圖示之實施形態中，是如圖2所示，首先，使較接近於剝離層74之端面即第一端面52朝上，並以保持設備4保持晶錠50。此時，可使接著劑(例如環氧樹脂系接著劑)介於晶錠50的第二端面54與保持台14的上表面之間來將晶錠50固定於保持台14、或者，亦可在保持台14的上表面生成吸引力來吸引保持晶錠50。接著，以Y軸方向移動機構16之第一馬達22使第一移動片20移動，並如圖1所示，使超音波設備6之端面6a面對於要生成之晶圓(在圖示之實施形態中為第一端面52到剝離層74為止的部分)。其次，以第一昇降設備28使超音波設備6下降，並在第一端面52與超音波設備6的端面6a之間隔成為規定尺寸(例如2~3mm左右)後，使第一昇降設備28的作動停止。又，以噴嘴昇降機構使噴嘴32移動，將噴嘴32的出口32a定位於第一端面52與端面6a之間。接著，以馬達使保持台14旋轉，並且如圖7所示，一邊以第一馬達22使第一移動片20在Y軸方向上移動，一邊從噴嘴32之出口32a將水供給至第一端面52與端面6a之間來生成水層LW，並且從超音波設備6振盪產生超音波。此時，以讓超音波設備6通過第一端面52整體的方式，使保持台14旋轉並且使第一移動片20在Y軸方向上移動，以涵蓋剝離層74整體來賦與超音波。藉此，可以藉由隔著水層LW對晶錠50賦與超音波，以刺激剝離層74並使裂隙72伸長，而使剝離層74之強度更加降低。接著，使超音波設備6的作動停止並使水供給源的作動停止。A peeling method for peeling a wafer from the ingot 50 on which the peeling layer 74 is formed using the peeling device 2 described above will be described. In the illustrated embodiment, as shown in FIG. 2, first, the first end surface 52, which is the end surface closer to the peeling layer 74, faces upward, and the ingot 50 is held by the holding device 4. At this time, an adhesive (for example, an epoxy-based adhesive) may be interposed between the second end surface 54 of the ingot 50 and the upper surface of the holding table 14 to fix the ingot 50 to the holding table 14 or, An attractive force is generated on the upper surface of the holding table 14 to attract and hold the ingot 50. Next, the first motor 22 of the moving mechanism 16 in the Y-axis direction moves the first moving piece 20, and as shown in FIG. 1, the end face 6a of the ultrasonic device 6 faces the wafer to be generated (implemented in the figure). In the aspect, it is a portion from the first end surface 52 to the peeling layer 74). Next, the ultrasonic device 6 is lowered by the first lifting device 28, and the distance between the first end surface 52 and the end surface 6a of the ultrasonic device 6 becomes a predetermined size (for example, about 2 to 3 mm). The operation stops. Further, the nozzle 32 is moved by the nozzle lifting mechanism, and the outlet 32a of the nozzle 32 is positioned between the first end surface 52 and the end surface 6a. Next, the holding table 14 is rotated by a motor, and as shown in FIG. 7, water is supplied to the first end surface from the outlet 32 a of the nozzle 32 while the first moving piece 20 is moved in the Y-axis direction by the first motor 22. The water layer LW is generated between 52 and the end surface 6a, and the ultrasonic wave is generated from the ultrasonic wave device 6. At this time, the ultrasonic device 6 is caused to pass through the entire first end surface 52 by rotating the holding table 14 and moving the first moving sheet 20 in the Y-axis direction so as to cover the entire peeling layer 74. Thereby, the ultrasonic wave can be applied to the ingot 50 through the water layer LW to stimulate the peeling layer 74 and extend the crack 72, thereby further reducing the strength of the peeling layer 74. Next, the operation of the ultrasonic device 6 is stopped, and the operation of the water supply source is stopped.
如上述，使剝離層74之裂隙72擴展後，以第一馬達22使第一移動片20移動，且使超音波設備6及噴嘴32自晶錠50之上方遠離，並且以第二馬達26使第二移動片24移動，而將剝離設備10定位於晶錠50的上方。接著，如圖8所示，以第二昇降設備34使保持部36下降，並使保持部36之吸附夾頭36a的下表面接觸於第一端面52。其次，打開閥42並且使連接於吸附夾頭36a之吸引源41作動，以在吸附夾頭36a之下表面生成吸引力，並以吸附夾頭36a來吸引保持要生成之晶圓。其次，以第二昇降設備34使保持部36上昇。藉此，如圖9所示，可以將剝離層74作為起點來將要生成之晶圓76從晶錠50剝離。As described above, after expanding the crack 72 of the peeling layer 74, the first moving piece 20 is moved by the first motor 22, and the ultrasonic device 6 and the nozzle 32 are moved away from above the ingot 50, and the second motor 26 is used The second moving sheet 24 moves to position the peeling device 10 above the ingot 50. Next, as shown in FIG. 8, the holding portion 36 is lowered by the second lifting device 34, and the lower surface of the suction chuck 36 a of the holding portion 36 is brought into contact with the first end surface 52. Next, the valve 42 is opened and the suction source 41 connected to the suction chuck 36a is actuated to generate an attractive force on the lower surface of the suction chuck 36a, and the suction chuck 36a is used to suck and hold the wafer to be generated. Next, the holding portion 36 is raised by the second lifting device 34. Thereby, as shown in FIG. 9, the peeling layer 74 can be used as a starting point to peel the wafer 76 to be generated from the ingot 50.
如上述，將要生成之晶圓76從晶錠50剝離後，在以保持部36之吸附夾頭36a保持晶圓76的狀態下，對晶圓76的剝離面76a及晶錠50的剝離面50a進行洗淨。在對晶圓76的剝離面76a及晶錠50的剝離面50a進行洗淨時，是打開閥45並從洗淨水供給源44將洗淨水W供給至剝離設備10，並由環形壁38之噴射口38a將洗淨水W朝向晶圓76之剝離面76a的直徑方向中心噴射。藉此，可以用洗淨水W洗淨晶圓76的剝離面76a，並從晶圓76的剝離面76a去除剝離屑。又，由於噴射口38a在環形壁38之圓周方向上隔著間隔形成有複數個，因此從噴射口38a所噴射而將保持於保持部36之晶圓76的剝離面76a洗淨後的洗淨水W，是在晶圓76的剝離面76a的中央部合流，並朝向位在保持於保持部36之晶圓76的正下方的晶錠50的剝離面50a而垂下。然後，朝晶錠50的剝離面50a垂下的洗淨水W，是從晶錠50的剝離面50a的中央部沿著剝離面50a朝向晶錠50的直徑方向外側放射狀地流動。藉此，可以用洗淨水W洗淨晶錠50的剝離面50a，並且也可從晶錠50的剝離面50a去除剝離屑。As described above, after the wafer 76 to be generated is peeled from the ingot 50, the wafer 76 is held on the peeling surface 76a of the wafer 76 and the peeling surface 50a of the ingot 50 with the wafer 76 held by the holding chuck 36a of the holding portion 36. Rinse. When cleaning the peeling surface 76 a of the wafer 76 and the peeling surface 50 a of the ingot 50, the valve 45 is opened and the washing water W is supplied from the washing water supply source 44 to the peeling equipment 10, and the annular wall 38 is used. The spray port 38 a sprays the washing water W toward the center in the radial direction of the peeling surface 76 a of the wafer 76. Thereby, the peeling surface 76 a of the wafer 76 can be washed with the washing water W, and the peeling debris can be removed from the peeling surface 76 a of the wafer 76. In addition, since a plurality of ejection openings 38a are formed at intervals in the circumferential direction of the annular wall 38, the ejection openings 38a are ejected from the ejection openings 38a and the peeled surface 76a of the wafer 76 held in the holding portion 36 is cleaned The water W merges at the central portion of the peeling surface 76 a of the wafer 76 and hangs down toward the peeling surface 50 a of the ingot 50 located directly below the wafer 76 held by the holding portion 36. Then, the washing water W hanging down to the peeling surface 50 a of the ingot 50 flows radially from the center of the peeling surface 50 a of the ingot 50 along the peeling surface 50 a toward the outside in the diameter direction of the ingot 50. Thereby, the peeling surface 50 a of the ingot 50 can be washed with the washing water W, and the peeling debris can be removed from the peeling surface 50 a of the ingot 50.
如以上，圖示之實施形態中的剝離裝置2至少是由下列所構成：保持設備4，保持晶錠50；超音波設備6，對保持於保持設備4之晶錠50賦與超音波以刺激剝離層74；及剝離設備10，具備保持部36及環形壁38，該保持部36是吸引保持要生成之晶圓，該環形壁38是自保持部36突出而圍繞要生成之晶圓的外周，且於環形壁38之內側形成有複數個噴射口38a，該等噴射口38a是朝向從晶錠50剝離之晶圓76的剝離面76a噴射洗淨水W來進行洗淨，因此能能夠以剝離層74為起點而容易地從晶錠50剝離晶圓76，並且可以同時洗淨晶圓76的剝離面76a及晶錠50的剝離面50a且去除剝離屑，因而可以節約洗淨時間或洗淨水W的使用量，而具有經濟效益。As described above, the peeling device 2 in the illustrated embodiment is composed of at least the following: the holding device 4 and the crystal ingot 50; and the ultrasonic device 6 which applies an ultrasonic wave to the crystal ingot 50 held in the holding device 4 to stimulate the ultrasonic wave. Peeling layer 74; and peeling equipment 10, which includes a holding portion 36 that sucks and holds a wafer to be generated, and an annular wall 38 that protrudes from the holding portion 36 and surrounds the outer periphery of the wafer to be generated A plurality of ejection ports 38a are formed on the inner side of the annular wall 38. The ejection ports 38a are sprayed with the washing water W toward the peeling surface 76a of the wafer 76 peeled from the ingot 50 to perform cleaning. The peeling layer 74 is used as a starting point to easily peel the wafer 76 from the ingot 50. The peeling surface 76a of the wafer 76 and the peeling surface 50a of the ingot 50 can be cleaned at the same time and the peeling debris can be removed, thereby saving cleaning time or washing. The amount of purified water W has economic benefits.
再者，在圖示之實施形態中，雖然說明了下述例子：於晶錠50形成剝離層74時，使晶錠50在與形成有偏角α的方向A正交的方向上對聚光點FP相對移動，並且在分度進給中使晶錠50在形成有偏角α的方向A上對聚光點FP相對移動，但是晶錠50與聚光點FP之相對的移動方向不是與形成有偏角α的方向A正交的方向亦可，又，分度進給中的晶錠50與聚光點FP之相對的移動方向不是形成有偏角α的方向A亦可。又，在圖示之實施形態中，雖然說明了下述例子：使超音波設備6昇降之第一昇降設備28及使噴嘴32昇降之噴嘴昇降機構為各自不同的構成，但亦可設成利用設置於第一移動片20之共通的昇降機構來使超音波設備6及噴嘴32昇降、或者設成藉由使Y軸方向移動機構16之框體18昇降而使超音波設備6、噴嘴32、及剝離設備10昇降亦可。In the illustrated embodiment, an example has been described in which, when the peeling layer 74 is formed on the ingot 50, the ingot 50 is focused in a direction orthogonal to the direction A where the deflection angle α is formed. The point FP is relatively moved, and the ingot 50 is relatively moved to the condensing point FP in the direction A where the deflection angle α is formed during the indexing feed, but the relative moving direction of the ingot 50 and the condensing point FP is not the same as The direction A in which the deflection angle α is formed may be orthogonal to each other, and the relative moving direction of the ingot 50 during the indexing feed and the condensing point FP may not be the direction A in which the deflection angle α is formed. In the illustrated embodiment, although the following example has been described: the first lifting device 28 for lifting the ultrasonic device 6 and the nozzle lifting mechanism for lifting and lowering the nozzle 32 have different configurations, but they can also be used. A common lifting mechanism provided in the first moving piece 20 moves the ultrasonic device 6 and the nozzle 32 up and down, or it is provided to raise and lower the frame 18 of the Y-axis direction moving mechanism 16 to raise the ultrasonic device 6, the nozzle 32, And the peeling equipment 10 can also be raised and lowered.
2‧‧‧剝離裝置2‧‧‧ stripping device
4‧‧‧保持設備4‧‧‧ holding equipment
6‧‧‧超音波設備6‧‧‧ Ultrasonic equipment
6a‧‧‧端面6a‧‧‧face
8‧‧‧水供給設備8‧‧‧ Water supply equipment
10‧‧‧剝離設備10‧‧‧ Stripping equipment
12‧‧‧基台12‧‧‧ abutment
14‧‧‧保持台14‧‧‧ holding table
16‧‧‧Y軸方向移動機構16‧‧‧Y-axis direction moving mechanism
18‧‧‧框體18‧‧‧Frame
18a‧‧‧引導開口18a‧‧‧Guide opening
20‧‧‧第一移動片20‧‧‧ The first moving film
22‧‧‧第一馬達22‧‧‧First Motor
24‧‧‧第二移動片24‧‧‧Second Mobile Movie
26‧‧‧第二馬達26‧‧‧Second motor
28‧‧‧第一昇降設備28‧‧‧The first lifting equipment
30‧‧‧連接口30‧‧‧Connector
32‧‧‧噴嘴32‧‧‧ Nozzle
32a‧‧‧出口32a‧‧‧Export
34‧‧‧第二昇降設備34‧‧‧Second lifting equipment
36‧‧‧保持部36‧‧‧ Holding Department
36a‧‧‧吸附夾頭36a‧‧‧ Suction Chuck
38‧‧‧環形壁38‧‧‧ annular wall
38a‧‧‧噴射口38a‧‧‧jet port
40、43‧‧‧流路40, 43‧‧‧flow
41‧‧‧吸引源41‧‧‧ Attraction source
42、45‧‧‧閥42, 45‧‧‧ valve
44‧‧‧洗淨水供給源44‧‧‧ source of washing water
50‧‧‧晶錠50‧‧‧ Crystal Ingot
50a、76a‧‧‧剝離面50a, 76a‧‧‧ peeling surface
52‧‧‧第一端面52‧‧‧first end face
54‧‧‧第二端面54‧‧‧Second end face
56‧‧‧周面56‧‧‧ weekly
58‧‧‧垂直線58‧‧‧ vertical line
60‧‧‧第一定向平面60‧‧‧first orientation plane
62‧‧‧第二定向平面62‧‧‧Second orientation plane
64‧‧‧雷射加工裝置64‧‧‧laser processing equipment
66‧‧‧工作夾台66‧‧‧Working table
68‧‧‧聚光器68‧‧‧ Concentrator
70‧‧‧改質部70‧‧‧Modification Department
72‧‧‧裂隙72‧‧‧ Rift
74‧‧‧剝離層74‧‧‧ peeling layer
76‧‧‧晶圓76‧‧‧ wafer
FP‧‧‧聚光點FP‧‧‧Spotlight
L1、L2‧‧‧長度L1, L2‧‧‧ length
LB‧‧‧脈衝雷射光線LB‧‧‧Pulse laser light
Li‧‧‧規定分度量Li‧‧‧ stipulates sub-metrics
LW‧‧‧水層LW‧‧‧ Water layer
W‧‧‧洗淨水W‧‧‧wash water
α‧‧‧偏角α‧‧‧ declination
圖1是依照本發明所構成之剝離裝置的立體圖。 圖2是顯示使晶錠保持於保持設備之狀態的剝離裝置的立體圖。 圖3是從下方觀看圖1所示之剝離設備的立體圖。 圖4之(a)是晶錠的正面圖，(b)是晶錠的平面圖。 圖5之(a)是顯示正在圖4所示之晶錠形成剝離層之狀態的立體圖，(b)是顯示正在圖4所示之晶錠形成剝離層之狀態的正面圖。 圖6之(a)是已形成有剝離層之晶錠的平面圖，(b)是(a)中的B-B線截面圖。 圖7是顯示對晶錠賦與超音波之狀態的剝離裝置的正面圖。 圖8是顯示藉由剝離設備而吸引保持有要生成之晶圓的狀態的剝離裝置的截面示意圖。 圖9是顯示以剝離層為起點而將晶圓從晶錠剝離之狀態的剝離裝置的截面示意圖。 圖10是顯示正在洗淨晶圓的剝離面及晶錠的剝離面之狀態的剝離裝置的截面示意圖。FIG. 1 is a perspective view of a peeling device constructed in accordance with the present invention. FIG. 2 is a perspective view showing a peeling device in a state where an ingot is held in a holding device. FIG. 3 is a perspective view of the peeling device shown in FIG. 1 as viewed from below. (A) is a front view of an ingot, (b) is a top view of an ingot. FIG. 5A is a perspective view showing a state where a peeling layer is being formed on the ingot shown in FIG. 4, and FIG. 5B is a front view showing a state where a peeling layer is being formed on the ingot shown in FIG. 4. Fig. 6 (a) is a plan view of a crystal ingot having a peeling layer formed, and (b) is a cross-sectional view taken along line B-B in (a). FIG. 7 is a front view of a peeling device showing a state in which ultrasonic waves are applied to an ingot. FIG. 8 is a schematic cross-sectional view showing a peeling device that sucks and holds a wafer to be produced by a peeling device. 9 is a schematic cross-sectional view of a peeling apparatus showing a state in which a wafer is peeled from an ingot with the peeling layer as a starting point. 10 is a schematic cross-sectional view of a peeling apparatus showing a state where a peeling surface of a wafer and a peeling surface of an ingot are being cleaned.
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| JP2017233108A JP6959120B2 (en) | 2017-12-05 | 2017-12-05 | Peeling device |
| JP2017-233108 | 2017-12-05 |
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| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| JP7417464B2 (en) | 2020-05-01 | 2024-01-18 | 株式会社ディスコ | How to generate wafers |
| JP2022096455A (en) * | 2020-12-17 | 2022-06-29 | 株式会社ディスコ | Wafer generation device |
| CN112976378B (en) * | 2021-04-26 | 2021-12-10 | 曲靖阳光能源硅材料有限公司 | Monocrystalline silicon rod clipper |
| CN115194336B (en) * | 2022-09-15 | 2022-11-22 | 西安睿智水射流科技有限公司 | Laser stripping recovery device and method for noble metal coating of anode plate |
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| JP5097152B2 (en) * | 2009-03-02 | 2012-12-12 | 和夫 田▲邉▼ | Wafer peeling method |
| JP5254114B2 (en) * | 2009-04-07 | 2013-08-07 | 日鉄住金ファインテック株式会社 | Wafer transfer method and wafer transfer apparatus |
| JP2015008191A (en) * | 2013-06-25 | 2015-01-15 | 富士電機株式会社 | Method of manufacturing semiconductor device |
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| JP6633446B2 (en) * | 2016-04-27 | 2020-01-22 | 株式会社ディスコ | Wafer processing method |
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| JP6959120B2 (en) | 2021-11-02 |
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