TW201930219A - Hydrogen-containing glass-based articles with high indentation cracking threshold - Google Patents

Hydrogen-containing glass-based articles with high indentation cracking threshold Download PDF

Info

Publication number
TW201930219A
TW201930219A TW107140818A TW107140818A TW201930219A TW 201930219 A TW201930219 A TW 201930219A TW 107140818 A TW107140818 A TW 107140818A TW 107140818 A TW107140818 A TW 107140818A TW 201930219 A TW201930219 A TW 201930219A
Authority
TW
Taiwan
Prior art keywords
equal
less
mol
glass substrate
mole
Prior art date
Application number
TW107140818A
Other languages
Chinese (zh)
Other versions
TWI806928B (en
Inventor
提摩西麥克 葛羅斯
喬基M 古雅諾夫
Original Assignee
美商康寧公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2020896A external-priority patent/NL2020896B1/en
Application filed by 美商康寧公司 filed Critical 美商康寧公司
Publication of TW201930219A publication Critical patent/TW201930219A/en
Application granted granted Critical
Publication of TWI806928B publication Critical patent/TWI806928B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/007Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in gaseous phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)

Abstract

Glass-based articles that include a hydrogen-containing layer extending from the surface of the article to a depth of layer. The hydrogen-containing layer includes a hydrogen concentration that decreases from a maximum hydrogen concentration to the depth of layer. The glass-based articles exhibit a high Vickers indentation cracking threshold. Glass compositions that are selected to promote the formation of the hydrogen-containing layer and methods of forming the glass-based article are also provided.

Description

具有高凹痕開裂閾值之含氫玻璃基底物件Hydrogen-containing glass substrate with high dent cracking threshold

相關申請案Related application

本申請主張2017年11月17日遞交的美國臨時申請第62/587,872號之優先權,該申請之內容受信賴且被以引用的方式全部併入本文中,且主張2018年5月8日遞交的NL申請第2020896號之優先權,該申請之內容受信賴且被以引用的方式全部併入本文中。The present application claims priority to US Provisional Application No. 62/587,872, filed on Nov. 17, the entire disclosure of which is hereby incorporated by reference inco The priority of NL Application No. 2020 896, the content of which is hereby incorporated by reference in its entirety in its entirety herein in

本揭示內容係關於含有氫之玻璃基底物件、用以形成該等玻璃基底物件之玻璃組合物及形成該等玻璃基底物件之方法。The present disclosure is directed to glass substrate articles containing hydrogen, glass compositions for forming such glass substrate articles, and methods of forming such glass substrate articles.

諸如智慧型電話、平板電腦及可佩戴元件(諸如,手錶及健身追蹤器)之攜帶型電子元件持續變得更小且更複雜。因而,習知地在此等攜帶型電子元件之至少一個外表面上使用的材料亦持續變得更複雜。舉例而言,當攜帶型電子元件變得更小且更薄以符合消費者需求時,在此等攜帶型電子元件中使用之顯示器蓋及外殼亦變得更小且更薄,從而導致對於用以形成此等組件之材料的較高效能要求。Portable electronic components such as smart phones, tablets and wearable components such as watches and fitness trackers continue to become smaller and more complex. Thus, materials conventionally used on at least one outer surface of such portable electronic components continue to become more complex. For example, when portable electronic components become smaller and thinner to meet consumer demand, display covers and housings used in such portable electronic components have also become smaller and thinner, resulting in To achieve higher performance requirements for the materials of these components.

因此,存在對於展現用於在攜帶型電子元件中使用之較高效能(諸如,抗損壞性)之材料的需求。Therefore, there is a need for materials that exhibit higher performance (such as damage resistance) for use in portable electronic components.

在態樣(1)中,提供一種玻璃基底物件。該玻璃基底物件包含:SiO2 、Al2 O3 及P2 O5 ;及一含氫層,其自該玻璃基底物件之一表面延伸至一層深度。該含氫層之一氫濃度自一最大氫濃度至該層深度降低,且該層深度大於5 μm。In the aspect (1), a glass substrate article is provided. The glass substrate article comprises: SiO 2 , Al 2 O 3 and P 2 O 5 ; and a hydrogen-containing layer extending from a surface of the glass substrate article to a depth. The hydrogen concentration of one of the hydrogen-containing layers decreases from a maximum hydrogen concentration to the depth of the layer, and the layer depth is greater than 5 μm.

在態樣(2)中,提供態樣(1)之玻璃基底物件,其中該玻璃基底物件具有大於或等於1 kgf之一維氏開裂初始閾值。In aspect (2), a glass substrate article of aspect (1) is provided, wherein the glass substrate article has an initial threshold of one of Vickers cracking greater than or equal to 1 kgf.

在態樣(3)中,提供態樣(1)或(2)之玻璃基底物件,其中該層深度大於或等於10 μm。In the aspect (3), the glass substrate article of the aspect (1) or (2) is provided, wherein the layer depth is greater than or equal to 10 μm.

在態樣(4)中,提供態樣(1)至(3)中任一項之玻璃基底物件,其中該最大氫濃度位於該玻璃基底物件之該表面處。In the aspect (4), the glass substrate article of any one of the aspects (1) to (3), wherein the maximum hydrogen concentration is located at the surface of the glass substrate article.

在態樣(5)中,提供態樣(1)至(4)中任一項之玻璃基底物件,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In the aspect (5), the glass substrate article of any one of the aspects (1) to (4), further comprising Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O At least one.

在態樣(6)中,提供態樣(1)至(5)中任一項之玻璃基底物件,進一步包含K2 O。In the aspect (6), the glass substrate article of any one of the aspects (1) to (5) is further provided, further comprising K 2 O.

在態樣(7)中,提供態樣(1)至(6)中任一項之玻璃基底物件,其中該玻璃基底物件之中心包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In the aspect (7), the glass substrate article of any one of the aspects (1) to (6), wherein the center of the glass substrate article comprises: greater than or equal to 45 mol% to less than or equal to 75 m % SiO 2 ; greater than or equal to 3 mole % to less than or equal to 20 mole % of Al 2 O 3 ; greater than or equal to 6 mole % to less than or equal to 15 mole % of P 2 O 5 ; Equal to 6 mol% to less than or equal to 25 mol% of K 2 O.

在態樣(8)中,提供態樣(1)至(6)中任一項之玻璃基底物件,其中該玻璃基底物件之該中心包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。The glass substrate article of any one of the aspects (1) to (6), wherein the center of the glass substrate article comprises: greater than or equal to 45 mol% to less than or equal to 75 mo SiO 2 of the ear; greater than or equal to 3 mol % to less than or equal to 20 mol % of Al 2 O 3 ; greater than or equal to 4 mol % to less than or equal to 15 mol % of P 2 O 5 ; Or equal to 11 mol% to less than or equal to 25 mol% of K 2 O.

在態樣(9)中,提供態樣(1)至(6)中任一項之玻璃基底物件,其中該玻璃基底物件之該中心包含:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In the aspect (9), the glass substrate article of any one of the aspects (1) to (6), wherein the center of the glass substrate article comprises: greater than or equal to 55 mol% to less than or equal to 69 mo SiO 2 of the ear; greater than or equal to 5 mol% to less than or equal to 15 mol% of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 10 mol % of P 2 O 5 ; Or equal to 10 mol% to less than or equal to 20 mol% of K 2 O.

在態樣(10)中,提供態樣(7)至(9)中任一項之玻璃基底物件,其中該玻璃基底物件之該中心包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In the aspect (10), the glass substrate article of any one of the aspects (7) to (9), wherein the center of the glass substrate article comprises: greater than or equal to 0% by mole to less than or equal to 10% Cs 2 O of the ear %; and Rb 2 O greater than or equal to 0 mol% to less than or equal to 10 mol%.

在態樣(11)中,提供態樣(1)至(10)中任一項之玻璃基底物件,其中該玻璃基底物件實質上無鋰及鈉中之至少一者。In the aspect (11), the glass substrate article of any one of the aspects (1) to (10), wherein the glass substrate article is substantially free of at least one of lithium and sodium.

在態樣(12)中,提供態樣(1)至(11)中任一項之玻璃基底物件,進一步包含自該玻璃基底物件之一表面延伸至該玻璃基底物件內至一壓縮深度的一壓縮應力層。In the aspect (12), the glass substrate article of any one of the aspects (1) to (11), further comprising a surface extending from a surface of the glass substrate member to the glass substrate member to a compression depth Compressed stress layer.

在態樣(13)中,提供態樣(12)之玻璃基底物件,其中該壓縮應力層包含至少約100 MPa之一壓縮應力,且該壓縮深度為至少約75 μm。In aspect (13), a glass substrate article of aspect (12) is provided, wherein the compressive stress layer comprises a compressive stress of at least about 100 MPa and the depth of compression is at least about 75 μm.

在態樣(14)中,提供一種消費者電子產品。該消費者電子產品包含:一外殼,其包含一前表面、一後表面及側表面;至少部分在該外殼內之電組件,該電組件包含至少一控制器、一記憶體及一顯示器,該顯示器在該外殼之該前表面處或鄰近該外殼之該前表面;及一蓋基板,其安置於該顯示器上。該外殼或該蓋基板中之至少一者之至少一部分包含態樣(1)至(13)中任一項之玻璃基底物件。In aspect (14), a consumer electronics product is provided. The consumer electronic product includes: a housing including a front surface, a rear surface, and a side surface; an electrical component at least partially within the housing, the electrical component including at least one controller, a memory, and a display, A display is at or adjacent the front surface of the outer casing; and a cover substrate is disposed on the display. At least a portion of at least one of the outer casing or the cover substrate comprises the glass substrate article of any of the aspects (1) to (13).

在態樣(15)中,提供一種玻璃。該玻璃包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In the aspect (15), a glass is provided. The glass comprises: greater than or equal to 45 mole% to less than or equal to 75 mole% of SiO 2; greater than or equal to 3 mole% to less than or equal to 20 mole% of Al 2 O 3; greater than or equal to 6 molar % to less than or equal to 15 mol% of P 2 O 5 ; and greater than or equal to 6 mol % to less than or equal to 25 mol % of K 2 O.

在態樣(16)中,提供態樣(15)之玻璃,包含:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In the aspect (16), the glass of the aspect (15) is provided, comprising: SiO 2 greater than or equal to 55 mol% to less than or equal to 69 mol%; greater than or equal to 5 mol% to less than or equal to 15 Mo 2 % Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 10 mol % P 2 O 5 ; and greater than or equal to 10 mol % to less than or equal to 20 mol % K 2 O .

在態樣(17)中,提供態樣(15)或(16)之玻璃,進一步包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In aspect (17), the glass of the aspect (15) or (16) is further provided, further comprising: Cs 2 O greater than or equal to 0 mol% to less than or equal to 10 mol%; and greater than or equal to 0 mo Ear % to less than or equal to 10 mol% of Rb 2 O.

在態樣(18)中,提供態樣(15)至(17)中任一項之玻璃,其中該玻璃實質上無鋰。In the aspect (18), the glass of any one of aspects (15) to (17), wherein the glass is substantially free of lithium.

在態樣(19)中,提供態樣(15)至(18)中任一項之玻璃,其中該玻璃實質上無鈉。In the aspect (19), the glass of any one of aspects (15) to (18), wherein the glass is substantially free of sodium.

在態樣(20)中,提供態樣(15)至(19)中任一項之玻璃,包含:大於或等於58莫耳%至小於或等於63莫耳%之SiO2 ;大於或等於7莫耳%至小於或等於14莫耳%之Al2 O3 ;大於或等於7莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於15莫耳%至小於或等於20莫耳%之K2 O。In the aspect (20), the glass of any one of the aspects (15) to (19), comprising: greater than or equal to 58% by mole to less than or equal to 63% by mole of SiO 2 ; greater than or equal to 7 Molar% to less than or equal to 14 mol% of Al 2 O 3 ; greater than or equal to 7 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 15 mol % to less than or equal to 20 moles of K 2 O.

在態樣(21)中,提供態樣(15)至(20)中任一項之玻璃,其中該玻璃具有大於或等於5 kgf之一維氏開裂初始閾值。In the aspect (21), the glass of any one of aspects (15) to (20), wherein the glass has an initial threshold of Vickers cracking greater than or equal to 5 kgf.

在態樣(22)中,提供態樣(15)至(21)中任一項之玻璃,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In the aspect (22), the glass of any one of the aspects (15) to (21), further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O By.

在態樣(23)中,提供一種玻璃。該玻璃包含:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In the aspect (23), a glass is provided. The glass comprises: greater than or equal to 45 mole% to less than or equal to 75 mole% of SiO 2; greater than or equal to 3 mole% to less than or equal to 20 mole% of Al 2 O 3; greater than or equal to 4 molar % to less than or equal to 15 mol% of P 2 O 5 ; and greater than or equal to 11 mol % to less than or equal to 25 mol % of K 2 O.

在態樣(24)中,提供態樣(23)之玻璃,包含:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於5莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於20莫耳%之K2 O。In the aspect (24), there is provided aspects (23) of glass, comprising: greater than or equal to 55 mole% to less than or equal to 69 mole% of SiO 2; greater than or equal to 5 mole% to less than or equal to 15 Mo 2 % Al 2 O 3 ; greater than or equal to 5 mol % to less than or equal to 10 mol % P 2 O 5 ; and greater than or equal to 11 mol % to less than or equal to 20 mol % K 2 O .

在態樣(25)中,提供態樣(23)或(24)之玻璃,進一步包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。In aspect (25), the glass of the aspect (23) or (24) is further provided, further comprising: Cs 2 O greater than or equal to 0 mol% to less than or equal to 10 mol%; and greater than or equal to 0 mo Ear % to less than or equal to 10 mol% of Rb 2 O.

在態樣(26)中,提供態樣(23)至(25)中任一項之玻璃,其中該玻璃實質上無鋰。In the aspect (26), the glass of any one of aspects (23) to (25), wherein the glass is substantially free of lithium.

在態樣(27)中,提供態樣(23)至(26)中任一項之玻璃,其中該玻璃實質上無鈉。In the aspect (27), the glass of any one of the aspects (23) to (26), wherein the glass is substantially free of sodium.

在態樣(28)中,提供態樣(23)至(27)中任一項之玻璃,包含:大於或等於58莫耳%至小於或等於63莫耳%之SiO2 ;大於或等於7莫耳%至小於或等於14莫耳%之Al2 O3 ;大於或等於7莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於15莫耳%至小於或等於20莫耳%之K2 O。In the aspect (28), the glass of any one of the aspects (23) to (27), comprising: greater than or equal to 58 mol% to less than or equal to 63 mol% of SiO 2 ; greater than or equal to 7 Molar% to less than or equal to 14 mol% of Al 2 O 3 ; greater than or equal to 7 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 15 mol % to less than or equal to 20 moles of K 2 O.

在態樣(29)中,提供態樣(23)至(28)中任一項之玻璃,其中該玻璃具有大於或等於5 kgf之一維氏開裂初始閾值。In the aspect (29), the glass of any one of aspects (23) to (28), wherein the glass has an initial threshold of Vickers cracking greater than or equal to 5 kgf.

在態樣(30)中,提供態樣(23)至(29)中任一項之玻璃,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In the aspect (30), the glass of any one of the aspects (23) to (29), further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O By.

在態樣(31)中,提供一種方法。該方法包含:將一玻璃基底基板暴露於具有大於或等於75%之一相對濕度的一環境以形成具有一含氫層之玻璃基底物件,該含氫層自該玻璃基底物件之一表面延伸至一層深度。該玻璃基底基板包括SiO2 、Al2 O3 及P2 O5 。該含氫層之一氫濃度自一最大氫濃度至該層深度降低,且該層深度大於5 μm。In the aspect (31), a method is provided. The method includes exposing a glass substrate to an environment having a relative humidity of greater than or equal to 75% to form a glass substrate article having a hydrogen containing layer extending from a surface of the glass substrate to One layer of depth. The glass base substrate includes SiO 2 , Al 2 O 3 , and P 2 O 5 . The hydrogen concentration of one of the hydrogen-containing layers decreases from a maximum hydrogen concentration to the depth of the layer, and the layer depth is greater than 5 μm.

在態樣(32)中,提供態樣(31)之方法,其中該玻璃基底基板具有包含以下各者之一組成:大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In aspect (32), the method of aspect (31), wherein the glass base substrate has a composition comprising one of: greater than or equal to 55 mol% to less than or equal to 69 mol% of SiO 2 ; Greater than or equal to 5 mol% to less than or equal to 15 mol% of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 10 mol % of P 2 O 5 ; and greater than or equal to 10 mol % To less than or equal to 20 mol% of K 2 O.

在態樣(33)中,提供態樣(31)之方法,其中該玻璃基底基板具有包含以下各者之一組成:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In aspect (33), the method of aspect (31), wherein the glass base substrate has a composition comprising one of: greater than or equal to 45 mol% to less than or equal to 75 mol% of SiO 2 ; Greater than or equal to 3 mole % to less than or equal to 20 mole % Al 2 O 3 ; greater than or equal to 4 mole % to less than or equal to 15 mole % P 2 O 5 ; and greater than or equal to 11 mole % To less than or equal to 25 mol% of K 2 O.

在態樣(34)中,提供態樣(31)之方法,其中該玻璃基底基板具有包含以下各者之一組成:大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In aspect (34), the method of aspect (31), wherein the glass base substrate has a composition comprising one of: greater than or equal to 45 mol% to less than or equal to 75 mol% of SiO 2 ; Greater than or equal to 3 mol% to less than or equal to 20 mol% of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 15 mol % of P 2 O 5 ; and greater than or equal to 6 mol % To less than or equal to 25 mol% of K 2 O.

在態樣(35)中,提供態樣(31)至(34)中任一項之方法,其中該玻璃基底基板進一步包含:大於或等於0莫耳%至小於或等於10莫耳%之Cs2 O;及大於或等於0莫耳%至小於或等於10莫耳%之Rb2 O。The method of any one of aspects (31) to (34), wherein the glass base substrate further comprises: Cs greater than or equal to 0% by mole to less than or equal to 10% by mole of Cs 2 O; and Rb 2 O greater than or equal to 0% by mole to less than or equal to 10% by mole.

在態樣(36)中,提供態樣(31)至(35)中任一項之方法,進一步包含Li2 O、Na2 O、K2 O、Cs2 O及Rb2 O中之至少一者。In the aspect (36), the method of any one of the aspects (31) to (35), further comprising at least one of Li 2 O, Na 2 O, K 2 O, Cs 2 O, and Rb 2 O By.

在態樣(37)中,提供態樣(31)至(36)中任一項之方法,其中該玻璃基底基板實質上無鋰及鈉中之至少一者。The method of any one of aspects (31) to (36), wherein the glass base substrate is substantially free of at least one of lithium and sodium.

在態樣(38)中,提供態樣(31)至(37)中任一項之方法,其中該暴露發生於大於或等於70℃之一溫度下。In the aspect (38), the method of any one of the aspects (31) to (37), wherein the exposure occurs at a temperature greater than or equal to 70 °C.

在態樣(39)中,提供態樣(31)至(38)中任一項之方法,其中該玻璃基底物件具有大於或等於1 kgf之一維氏開裂初始閾值。The method of any one of aspects (31) to (38), wherein the glass substrate article has an initial threshold of Vickers cracking greater than or equal to 1 kgf.

此等及其他態樣、優勢及突出特徵將自以下詳細描述、附圖及隨附申請專利範圍變得顯而易見。These and other aspects, advantages, and salient features will become apparent from the following detailed description, drawings, and appended claims.

在以下描述中,貫穿在圖中展示之若干視圖,相似參考字元表示相似或對應的部分。亦應理解,除非另有指定,否則諸如「頂部」、「底部」、「向外」、「向內」及類似者之術語為方便用詞,且不應被解釋為限制術語。除非另有指定,否則值範圍在敘述時包括該範圍之上限及下限,以及其間之任何子範圍。如本文中所使用,不定冠詞「一」(a、an)及對應的定冠詞「該(等)」(the)意謂「至少一個」或「一或多個」,除非另有指定。亦應理解,說明書及圖式中揭示之各種特徵可按任何及所有組合使用。In the following description, like reference characters refer to the It should also be understood that terms such as "top", "bottom", "outward", "inward" and the like are used in a convenient term and should not be construed as limiting terms. Unless otherwise specified, the range of values includes the upper and lower limits of the range, and any sub-ranges therebetween. As used herein, the indefinite article "a", "the", "the" and "the" It should also be understood that the various features disclosed in the description and drawings may be used in any and all combinations.

如本文中所使用,術語「玻璃基底」按其最寬泛意義使用,以包括完全或部分由玻璃製成之任何物體,包括玻璃陶瓷(其包括結晶相及殘餘非晶玻璃相)。除非另有指定,否則本文中描述的玻璃之所有組成係按莫耳百分比(莫耳%)來表達,且成分係基於氧化物來提供。除非另有指定,否則所有溫度係按攝氏度(℃)來表達。As used herein, the term "glass substrate" is used in its broadest sense to include any object made entirely or partially of glass, including glass ceramics (which include a crystalline phase and a residual amorphous glass phase). All compositions of the glasses described herein are expressed in percent moles (% by mole), and the ingredients are provided based on the oxide, unless otherwise specified. All temperatures are expressed in degrees Celsius (°C) unless otherwise specified.

注意,術語「實質上」及「約」可在本文中用以表示固有之不確定程度,其可歸因於任何定量比較、值、量測或其他表示。此等術語亦在本文中用以表示定量表示可因陳述之參考而變化而不導致討論中的主題之基本功能之改變的程度。舉例而言,「實質上無K2 O」之玻璃為K2 O並未經主動地添加或分批至玻璃內而可按極小量(諸如,按小於約0.01莫耳%之量)作為污染物存在之玻璃。如本文中利用,當術語「約」用以修飾一值時,亦揭示精確值。舉例而言,術語「大於約10莫耳%」亦揭示「大於或等於約10莫耳%」。Note that the terms "substantially" and "about" may be used herein to denote the inherent degree of uncertainty that may be attributed to any quantitative comparison, value, measurement, or other representation. The terms are also used herein to indicate a quantitative representation of a change that can be made by a reference to a statement, without causing a change in the basic function of the subject matter under discussion. For example, a glass that is "substantially free of K 2 O" is K 2 O and is not actively added or batched into the glass and can be contaminated by a very small amount (such as less than about 0.01 mole %). The glass of matter. As used herein, when the term "about" is used to modify a value, the precise value is also disclosed. For example, the term "greater than about 10 mol%" also reveals "greater than or equal to about 10 mol%."

現將對各種實施例詳細地進行參考,該等實施例之實例說明於隨附實例及圖式中。Reference will now be made in detail to the various embodiments, examples of which are illustrated in the accompanying drawings and drawings.

該玻璃基底物件包括一含氫層,其自該物件之一表面延伸至一層深度。該含氫層包括自該玻璃基底物件之一最大氫濃度至該層深度減小之一氫濃度。在一些實施例中,該最大氫濃度可位於該玻璃基底物件之該表面處。該玻璃基底物件展現一高維氏凹痕開裂閾值(例如,大於或等於1 kgf),不使用傳統強化方法(例如,一對鹼離子之離子交換或熱回火)。由玻璃基底物件展現之高維氏凹痕開裂閾值表示高抗損壞性。The glass substrate article includes a hydrogen containing layer extending from a surface of the article to a depth. The hydrogen containing layer includes a hydrogen concentration that decreases from a maximum hydrogen concentration of the glass substrate article to a depth of the layer. In some embodiments, the maximum hydrogen concentration can be at the surface of the glass substrate article. The glass substrate article exhibits a high Vickers dent cracking threshold (eg, greater than or equal to 1 kgf) without the use of conventional strengthening methods (eg, ion exchange or thermal tempering of a pair of alkali ions). The high Vickers dent cracking threshold exhibited by the glass substrate article indicates high damage resistance.

玻璃基底物件可藉由將玻璃基底基板暴露於含有水蒸氣之環境來形成,藉此允許氫物質穿透玻璃基底基板且形成具有一含氫層之玻璃基底物件。如本文中所利用,氫物質包括分子水、羥基、氫離子及水合氫離子。該等玻璃基底基板之組成可經選擇以促進氫物質至玻璃內之相互擴散。如本文中所利用,術語「玻璃基底基板」指在暴露於含水蒸氣環境前之前驅物,用於形成包括含氫層之玻璃基底物件。類似地,術語「玻璃基底物件」指包括一含氫層之後暴露物件。The glass substrate article can be formed by exposing the glass substrate to an environment containing water vapor, thereby allowing the hydrogen species to penetrate the glass substrate and form a glass substrate having a hydrogen containing layer. As utilized herein, hydrogen species include molecular water, hydroxyl groups, hydrogen ions, and hydronium ions. The composition of the glass substrate can be selected to promote interdiffusion of hydrogen species into the glass. As used herein, the term "glass-based substrate" refers to a precursor prior to exposure to an aqueous vapor environment for forming a glass substrate article comprising a hydrogen-containing layer. Similarly, the term "glass substrate article" refers to an article that is exposed after including a hydrogen containing layer.

根據一些實施例的玻璃基底物件100之一代表示橫截面描繪於第1圖中。玻璃基底物件100具有一厚度t,其在一第一表面110與一第二表面112之間延伸。第一含氫層120自第一表面110延伸至一第一層深度,其中該第一層深度具有一深度d1,其自該第一表面110至玻璃基底物件100內量測。第二含氫層122自第二表面112延伸至一第二層深度,其中該第二層深度具有一深度d2,其自該第二表面112至玻璃基底物件100內量測。無添加氫物質區域130存在於第一層深度與第二層深度之間。One generation representation of a glass substrate article 100 in accordance with some embodiments is depicted in cross section in FIG. The glass substrate article 100 has a thickness t that extends between a first surface 110 and a second surface 112. The first hydrogen containing layer 120 extends from the first surface 110 to a first layer depth, wherein the first layer depth has a depth d1 that is measured from the first surface 110 into the glass substrate article 100. The second hydrogen containing layer 122 extends from the second surface 112 to a second layer depth, wherein the second layer depth has a depth d2 that is measured from the second surface 112 into the glass substrate article 100. The no-added hydrogen species region 130 exists between the first layer depth and the second layer depth.

玻璃基底物件之含氫層可具有大於5 μm之一層深度(depth of layer; DOL)。在一些實施例中,該層深度可大於或等於10 μm,諸如,大於或等於15 μm、大於或等於20 μm、大於或等於25 μm、大於或等於30 μm、大於或等於35 μm、大於或等於40 μm、大於或等於45 μm、大於或等於50 μm、大於或等於55 μm、大於或等於60 μm、大於或等於65 μm、大於或等於70 μm、大於或等於75 μm、大於或等於80 μm、大於或等於85 μm、大於或等於90 μm、大於或等於95 μm、大於或等於100 μm、大於或等於105 μm、大於或等於110 μm、大於或等於115 μm、大於或等於120 μm、大於或等於125 μm、大於或等於130 μm、大於或等於135 μm、大於或等於140 μm、大於或等於145 μm、大於或等於150 μm、大於或等於155 μm、大於或等於160 μm、大於或等於165 μm、大於或等於170 μm、大於或等於175 μm、大於或等於180 μm、大於或等於185 μm、大於或等於190 μm、大於或等於195 μm、大於或等於200 μm或更大。在一些實施例中,該層深度可自大於5 μm至小於或等於205 μm,諸如,自大於或等於10 μm至小於或等於200 μm、自大於或等於15 μm至小於或等於200 μm、自大於或等於20 μm至小於或等於195 μm、自大於或等於25 μm至小於或等於190 μm、自大於或等於30 μm至小於或等於185 μm、自大於或等於35 μm至小於或等於180 μm、自大於或等於40 μm至小於或等於175 μm、自大於或等於45 μm至小於或等於170 μm、自大於或等於50 μm至小於或等於165 μm、自大於或等於55 μm至小於或等於160 μm、自大於或等於60 μm至小於或等於155 μm、自大於或等於65 μm至小於或等於150 μm、自大於或等於70 μm至小於或等於145 μm、自大於或等於75 μm至小於或等於140 μm、自大於或等於80 μm至小於或等於135 μm、自大於或等於85 μm至小於或等於130 μm、自大於或等於90 μm至小於或等於125 μm、自大於或等於95 μm至小於或等於120 μm、自大於或等於100 μm至小於或等於115 μm、自大於或等於105 μm至小於或等於110 μm或由此等端點中之任何者形成之任何子範圍。一般而言,由玻璃基底物件展現之層深度大於可藉由暴露於周圍環境而產生之層深度。The hydrogen-containing layer of the glass substrate article may have a depth of layer (DOL) of greater than 5 μm. In some embodiments, the layer depth may be greater than or equal to 10 μιη, such as greater than or equal to 15 μιη, greater than or equal to 20 μιη, greater than or equal to 25 μιη, greater than or equal to 30 μιη, greater than or equal to 35 μιη, greater than or Equal to 40 μm, greater than or equal to 45 μm, greater than or equal to 50 μm, greater than or equal to 55 μm, greater than or equal to 60 μm, greater than or equal to 65 μm, greater than or equal to 70 μm, greater than or equal to 75 μm, greater than or equal to 80 Μm, greater than or equal to 85 μm, greater than or equal to 90 μm, greater than or equal to 95 μm, greater than or equal to 100 μm, greater than or equal to 105 μm, greater than or equal to 110 μm, greater than or equal to 115 μm, greater than or equal to 120 μm, Greater than or equal to 125 μm, greater than or equal to 130 μm, greater than or equal to 135 μm, greater than or equal to 140 μm, greater than or equal to 145 μm, greater than or equal to 150 μm, greater than or equal to 155 μm, greater than or equal to 160 μm, greater than or Equal to 165 μm, greater than or equal to 170 μm, greater than or equal to 175 μm, greater than or equal to 180 μm, greater than or equal to 185 μm, greater than or equal to 190 μm, greater than or equal to 195 μm, greater than or equal to 200 m or more. In some embodiments, the layer depth may be from greater than 5 μm to less than or equal to 205 μm, such as from greater than or equal to 10 μm to less than or equal to 200 μm, from greater than or equal to 15 μm to less than or equal to 200 μm, from Greater than or equal to 20 μm to less than or equal to 195 μm, from greater than or equal to 25 μm to less than or equal to 190 μm, from greater than or equal to 30 μm to less than or equal to 185 μm, from greater than or equal to 35 μm to less than or equal to 180 μm From greater than or equal to 40 μm to less than or equal to 175 μm, from greater than or equal to 45 μm to less than or equal to 170 μm, from greater than or equal to 50 μm to less than or equal to 165 μm, from greater than or equal to 55 μm to less than or equal to 160 μm, from greater than or equal to 60 μm to less than or equal to 155 μm, from greater than or equal to 65 μm to less than or equal to 150 μm, from greater than or equal to 70 μm to less than or equal to 145 μm, from greater than or equal to 75 μm to less than Or equal to 140 μm, from greater than or equal to 80 μm to less than or equal to 135 μm, from greater than or equal to 85 μm to less than or equal to 130 μm, from greater than or equal to 90 μm to less than or equal to 125 μm, from greater than or equal to 95 μm Less than or equal to 120 μm, from greater than or equal to 100 μm to less than or equal to 115 μm, from greater than or equal to 105 μm to less than or equal to 110 μm or the like whereby the end points of any subrange any of those formed. In general, the depth of the layer exhibited by the glass substrate article is greater than the depth of the layer that can be created by exposure to the surrounding environment.

玻璃基底物件之含氫層可具有大於0.005t 之一層深度(depth of layer; DOL),其中t為該玻璃基底物件之厚度。在一些實施例中,該層深度可大於或等於0.010t ,諸如,大於或等於0.015t 、大於或等於0.020t 、大於或等於0.025t 、大於或等於0.030t 、大於或等於0.035t 、大於或等於0.040t 、大於或等於0.045t 、大於或等於0.050t 、大於或等於0.055t 、大於或等於0.060t 、大於或等於0.065t 、大於或等於0.070t 、大於或等於0.075t 、大於或等於0.080t 、大於或等於0.085t 、大於或等於0.090t 、大於或等於0.095t 、大於或等於0.10t 、大於或等於0.15t 、大於或等於0.20t 或更大。在一些實施例中,DOL可自大於0.005t 至小於或等於0.205t ,諸如,自大於或等於0.010t 至小於或等於0.200t 、自大於或等於0.015t 至小於或等於0.195t 、自大於或等於0.020t 至小於或等於0.190t 、自大於或等於0.025t 至小於或等於0.185t 、自大於或等於0.030t 至小於或等於0.180t 、自大於或等於0.035t 至小於或等於0.175t 、自大於或等於0.040t 至小於或等於0.170t 、自大於或等於0.045t 至小於或等於0.165t 、自大於或等於0.050t 至小於或等於0.160t 、自大於或等於0.055t 至小於或等於0.155t 、自大於或等於0.060t 至小於或等於0.150t 、自大於或等於0.065t 至小於或等於0.145t 、自大於或等於0.070t 至小於或等於0.140t 、自大於或等於0.075t 至小於或等於0.135t 、自大於或等於0.080t 至小於或等於0.130t 、自大於或等於0.085t 至小於或等於0.125t 、自大於或等於0.090t 至小於或等於0.120t 、自大於或等於0.095t 至小於或等於0.115t 、自大於或等於0.100t 至小於或等於0.110t 或由此等端點中之任何者形成之任何子範圍。The hydrogen containing layer of the glass substrate article can have a depth of layer (DOL) greater than 0.005 t , where t is the thickness of the glass substrate article. In some embodiments, the layer depth may be greater than or equal to 0.010 t , such as greater than or equal to 0.015 t , greater than or equal to 0.020 t , greater than or equal to 0.025 t , greater than or equal to 0.030 t , greater than or equal to 0.035 t , greater than or Equal to 0.040 t , greater than or equal to 0.045 t , greater than or equal to 0.050 t , greater than or equal to 0.055 t , greater than or equal to 0.060 t , greater than or equal to 0.065 t , greater than or equal to 0.070 t , greater than or equal to 0.075 t , greater than or equal to 0.080 t , greater than or equal to 0.085 t , greater than or equal to 0.090 t , greater than or equal to 0.095 t , greater than or equal to 0.10 t , greater than or equal to 0.15 t , greater than or equal to 0.20 t or greater. In some embodiments, the DOL may be from greater than 0.005 t to less than or equal to 0.205 t , such as from greater than or equal to 0.010 t to less than or equal to 0.200 t , from greater than or equal to 0.015 t to less than or equal to 0.195 t , from greater than or Is equal to 0.020 t to less than or equal to 0.190 t , from greater than or equal to 0.025 t to less than or equal to 0.185 t , from greater than or equal to 0.030 t to less than or equal to 0.180 t , from greater than or equal to 0.035 t to less than or equal to 0.175 t , from Greater than or equal to 0.040 t to less than or equal to 0.170 t , from greater than or equal to 0.045 t to less than or equal to 0.165 t , from greater than or equal to 0.050 t to less than or equal to 0.160 t , from greater than or equal to 0.055 t to less than or equal to 0.155 t From greater than or equal to 0.060 t to less than or equal to 0.150 t , from greater than or equal to 0.065 t to less than or equal to 0.145 t , from greater than or equal to 0.070 t to less than or equal to 0.140 t , from greater than or equal to 0.075 t to less than or equal to 0.135 t, from greater than or equal to less than or equal to 0.080 t 0.130 t, from greater than or equal to less than or equal to 0.085 t 0.125 t, from greater than or equal to less than or equal to 0.090 t 0.120 t From greater than or equal to less than or equal to 0.095 t 0.115 t, from greater than or equal to less than or equal to 0.100 t 0.110 t or the like whereby the end points is formed by any of the subranges.

層深度及氫濃度係藉由此項技術中已知之次級離子質譜法(secondary ion mass spectrometry; SIMS)技術來量測。SIMS技術能夠量測在一給定深度處之氫濃度,但不能夠辨別玻璃基底物件中存在之氫物質。為此原因,所有氫物質皆對SIMS量測之氫濃度有影響。如本文中所利用,層深度(depth of layer; DOL)指在玻璃基底物件之表面下方的第一深度,在該第一深度處,氫濃度等於在玻璃基底物件之中心處的氫濃度。此定義說明在處理前的玻璃基底基板之氫濃度,使得層濃度指藉由處理製程增添的氫之深度。實際上,在玻璃基底物件之中心處的氫濃度可藉由在氫濃度變得實質上恆定的距玻璃基底物件之表面之深度處之氫濃度來估算,因為預期在此深度與玻璃基底物件之中心之間,氫濃度不改變。此估算允許在不量測貫穿玻璃基底物件之全部深度之氫濃度之情況下判定DOL。The layer depth and hydrogen concentration are measured by the secondary ion mass spectrometry (SIMS) technique known in the art. The SIMS technology is capable of measuring the hydrogen concentration at a given depth, but is unable to discern the hydrogen species present in the glass substrate. For this reason, all hydrogen species have an effect on the hydrogen concentration measured by SIMS. As used herein, a depth of layer (DOL) refers to a first depth below the surface of a glass substrate article at which the hydrogen concentration is equal to the hydrogen concentration at the center of the glass substrate article. This definition describes the hydrogen concentration of the glass substrate prior to processing such that the layer concentration refers to the depth of hydrogen added by the processing process. In fact, the concentration of hydrogen at the center of the glass substrate can be estimated by the hydrogen concentration at a depth from the surface of the glass substrate at which the hydrogen concentration becomes substantially constant, since it is expected to be at this depth with the glass substrate. The hydrogen concentration does not change between the centers. This estimation allows DOL to be determined without measuring the hydrogen concentration across the full depth of the glass substrate.

在一些實施例中,玻璃基底物件之厚度之全部可為一含氫層之部分。當玻璃基底基板之處理在用於氫物質自每一暴露之表面擴散至玻璃基底物件之中心的足夠條件下在足夠時間內延長時,可生產此玻璃基底物件。在一些實施例中,在將玻璃基底物件之表面暴露於相同處理條件之情況下,最小氫濃度可位於玻璃基底物件之厚度之一半處,使得含氫層在玻璃基底物件之中心處會合。在此等實施例中,DOL可位於玻璃基底物件之厚度之一半處。在一些實施例中,該等玻璃基底物件可不包括無添加之氫物質之一區域。在一些實施例中,可在一濕環境中處理玻璃基底物件,使得添加之氫物質之濃度貫穿玻璃基底物件均等,且氫濃度不隨在玻璃基底物件之表面下方的深度而變化。根據此等實施例之玻璃基底物件將不展現如本文中定義之DOL,因為在玻璃基底物件之中心處的氫濃度將等效於在所有其他深度處之氫濃度。In some embodiments, all of the thickness of the glass substrate article can be part of a hydrogen containing layer. The glass substrate can be produced when the treatment of the glass substrate is extended for a sufficient time under sufficient conditions for the hydrogen species to diffuse from the exposed surface to the center of the glass substrate. In some embodiments, where the surface of the glass substrate article is exposed to the same processing conditions, the minimum hydrogen concentration can be located at one-half the thickness of the glass substrate article such that the hydrogen-containing layer meets at the center of the glass substrate article. In such embodiments, the DOL can be located at one-half of the thickness of the glass substrate article. In some embodiments, the glass substrate articles may not include a region of the unadded hydrogen species. In some embodiments, the glass substrate article can be treated in a wet environment such that the concentration of added hydrogen species is uniform across the glass substrate article and the hydrogen concentration does not vary with depth below the surface of the glass substrate article. The glass substrate article according to such embodiments will not exhibit a DOL as defined herein, as the hydrogen concentration at the center of the glass substrate article will be equivalent to the hydrogen concentration at all other depths.

該等玻璃基底物件對維氏凹痕開裂有高度阻性。高維氏凹痕開裂阻性對玻璃基底物件賦予高抗損壞性。並不希望受到任何特徵理論束縛,玻璃基底物件之水含量可減小含氫層之局部黏度,使得發生局部流動而非開裂。玻璃基底物件之維氏凹痕開裂閾值在不使用習知強化技術(諸如,針對玻璃中之較小鹼離子的大鹼離子之交換、熱回火或具有熱膨脹係數不匹配之玻璃層之層壓)之情況下達成。玻璃基底物件展現大於或等於1 kgf之維氏凹痕開裂閾值,諸如,大於或等於2 kgf、大於或等於3 kgf、大於或等於4 kgf、大於或等於5 kgf、大於或等於6 kgf、大於或等於7 kgf、大於或等於8 kgf、大於或等於9 kgf、大於或等於10 kgf、大於或等於11 kgf、大於或等於12 kgf、大於或等於13 kgf、大於或等於14 kgf、大於或等於15 kgf、大於或等於16 kgf、大於或等於17 kgf、大於或等於18 kgf、大於或等於19 kgf、大於或等於20 kgf、大於或等於21 kgf、大於或等於22 kgf、大於或等於23 kgf、大於或等於24 kgf、大於或等於25 kgf、大於或等於26 kgf、大於或等於27 kgf、大於或等於28 kgf、大於或等於29 kgf、大於或等於30 kgf或更大。在一些實施例中,玻璃基底物件展現自大於或等於1 kgf至小於或等於30 kgf之維氏凹痕開裂閾值,諸如,自大於或等於2 kgf至小於或等於29 kgf、自大於或等於3 kgf至小於或等於28 kgf、自大於或等於4 kgf至小於或等於27 kgf、自大於或等於5 kgf至小於或等於26 kgf、自大於或等於6 kgf至小於或等於25 kgf、自大於或等於7 kgf至小於或等於24 kgf、自大於或等於8 kgf至小於或等於23 kgf、自大於或等於9 kgf至小於或等於22 kgf、自大於或等於10 kgf至小於或等於21 kgf、自大於或等於11 kgf至小於或等於20 kgf、自大於或等於12 kgf至小於或等於19 kgf、自大於或等於13 kgf至小於或等於18 kgf、自大於或等於14 kgf至小於或等於17 kgf、自大於或等於15 kgf至小於或等於16 kgf或由此等端點中之任何者形成之任何子範圍。These glass substrate objects are highly resistive to Vickers dent cracking. High Vickers dent crack resistance imparts high damage resistance to glass substrate articles. Without wishing to be bound by any feature theory, the water content of the glass substrate can reduce the local viscosity of the hydrogen containing layer such that localized flow occurs rather than cracking. The Vickers dent cracking threshold of glass substrate articles is laminated without the use of conventional strengthening techniques such as the exchange of large alkali ions for small alkali ions in glass, thermal tempering, or glass layers with mismatched thermal expansion coefficients. Under the circumstances. The glass substrate article exhibits a Vickers dent cracking threshold greater than or equal to 1 kgf, such as greater than or equal to 2 kgf, greater than or equal to 3 kgf, greater than or equal to 4 kgf, greater than or equal to 5 kgf, greater than or equal to 6 kgf, greater than Or equal to 7 kgf, greater than or equal to 8 kgf, greater than or equal to 9 kgf, greater than or equal to 10 kgf, greater than or equal to 11 kgf, greater than or equal to 12 kgf, greater than or equal to 13 kgf, greater than or equal to 14 kgf, greater than or equal to 15 kgf, greater than or equal to 16 kgf, greater than or equal to 17 kgf, greater than or equal to 18 kgf, greater than or equal to 19 kgf, greater than or equal to 20 kgf, greater than or equal to 21 kgf, greater than or equal to 22 kgf, greater than or equal to 23 kgf 24 kgf or more, 25 kgf or more, 26 kgf or more, 27 kgf or more, 28 kgf or more, 29 kgf or more, 30 kgf or more or more. In some embodiments, the glass substrate article exhibits a Vickers dent cracking threshold from greater than or equal to 1 kgf to less than or equal to 30 kgf, such as from greater than or equal to 2 kgf to less than or equal to 29 kgf, from greater than or equal to 3 Kgf to less than or equal to 28 kgf, from greater than or equal to 4 kgf to less than or equal to 27 kgf, from greater than or equal to 5 kgf to less than or equal to 26 kgf, from greater than or equal to 6 kgf to less than or equal to 25 kgf, from greater than or Equivalent to 7 kgf to less than or equal to 24 kgf, from greater than or equal to 8 kgf to less than or equal to 23 kgf, from greater than or equal to 9 kgf to less than or equal to 22 kgf, from greater than or equal to 10 kgf to less than or equal to 21 kgf, from Greater than or equal to 11 kgf to less than or equal to 20 kgf, from greater than or equal to 12 kgf to less than or equal to 19 kgf, from greater than or equal to 13 kgf to less than or equal to 18 kgf, from greater than or equal to 14 kgf to less than or equal to 17 kgf Any subrange that is formed from any greater than or equal to 15 kgf to less than or equal to 16 kgf or any of the endpoints.

維氏開裂初始閾值(或凹痕斷裂閾值)係藉由維式凹痕計量測。維氏開裂初始閾值為玻璃之抗凹痕損壞性之量測。測試涉及使用面之間具有136°之一角度的基於正方形之金字塔形金剛石凹痕計,被稱作維氏凹痕計。維氏凹痕計與在標準微硬度測試(如在ASTM-E384-11中所描述)中使用之凹痕計相同。選擇最少五個試樣來表示感興趣之玻璃類型及/或樣本。對於每一試樣,將多個五凹痕集合引入至試樣表面。每一五凹痕集合係在一給定負載下引入,其中每一個別凹痕分開最小5 mm,且靠近一試樣邊緣不小於5 mm。對於測試負載≥ 2 kg,使用50公斤/分鐘之凹痕計裝載/卸載速率。對於測試負載< 2 kg,使用5公斤/分鐘之速率。利用在目標負載處10秒之停留(亦即,保持)時間。機器在停留週期期間維持負載控制。在至少12小時之一週期後,使用500X放大率下之複合顯微鏡在反射光下檢驗凹痕。接著針對每一凹痕記下中間/徑向開裂(自凹痕沿著垂直於物件之主平面的一平面延伸之開裂)或試樣斷裂之存在或不存在。注意,側向開裂(沿著平行於物件之主平面的一平面延伸之開裂)之形成不被視為指示展現閾值行為,此係由於中間/徑向開裂之形成或試樣斷裂對於此測試具有利害關係。將試樣閾值定義為最低連續凹痕負載(其包括符合閾值的大於50%之個別凹痕)之中點。舉例而言,若在一個別試樣內,在5 kg負載下誘發之2/5(40%)的凹痕已超過閾值,且在6 kg負載下誘發之3/5(60%)的凹痕已超過閾值,則試樣閾值將定義為大於5 kg。亦可針對每一樣本報告所有試樣中點之範圍(最低值至最高值)。將預測試、測試及後測試環境控制至23±2℃及50±5% Rh,以使試樣之疲勞(應力腐蝕)行為之變化最小化。The initial threshold of Vickers cracking (or the dent break threshold) is measured by dimensional dents. The initial threshold of Vickers cracking is the measure of the dent resistance of the glass. The test involves the use of a square-based pyramidal diamond dentometer with an angle of 136° between the faces, referred to as a Vickers dentometer. The Vickers dent meter is the same as the dent meter used in the standard microhardness test (as described in ASTM-E384-11). A minimum of five samples are selected to indicate the type of glass and/or sample of interest. For each sample, a plurality of five indent sets were introduced to the surface of the sample. Each of the five dent sets is introduced at a given load, with each individual dent separated by a minimum of 5 mm and not less than 5 mm near the edge of a sample. For a test load ≥ 2 kg, a loading/unloading rate of 50 kg/min dent is used. For test loads < 2 kg, use a rate of 5 kg/min. A 10 second pause (ie, hold) time at the target load is utilized. The machine maintains load control during the dwell period. After one cycle of at least 12 hours, the dent was examined under reflected light using a composite microscope at 500X magnification. The intermediate/radial cracking (cracking from a dent along a plane perpendicular to the principal plane of the object) or the presence or absence of sample rupture is then noted for each dent. Note that the formation of lateral cracking (cracking along a plane parallel to the principal plane of the object) is not considered indicative of exhibiting threshold behavior due to the formation of intermediate/radial cracking or sample fracture for this test. Stakes. The sample threshold is defined as the midpoint of the lowest continuous dent load (which includes more than 50% of individual dents that meet the threshold). For example, if in one sample, 2/5 (40%) of the dent induced at 5 kg load has exceeded the threshold and 3/5 (60%) of the depression induced at 6 kg load If the mark has exceeded the threshold, the sample threshold will be defined as greater than 5 kg. The range of the midpoints (lowest to highest) for all samples can also be reported for each sample. Pre-test, test, and post-test environments were controlled to 23 ± 2 ° C and 50 ± 5% Rh to minimize variations in fatigue (stress corrosion) behavior of the specimen.

不希望受任何特定理論束縛,玻璃基底物件之含氫層可為氫物質針對玻璃基底基板之組成中含有的離子之相互擴散之結果。單價含氫物質(諸如,H3 O+ 及/或H+ )可替換玻璃基底基板組成中含有之鹼離子以形成玻璃基底物件。含氫物質替換的鹼離子之大小對玻璃基底基板中的含氫物質之擴散性有影響,此係因為較大鹼離子產生有助於相互擴散機制之較大空隙空間。舉例而言,水合氫離子(H3 O+ )具有靠近鉀之離子半徑且比鋰之離子半徑大得多之一離子半徑。觀測到,當玻璃基底基板含有鉀時,含氫物質在玻璃基底基板中之擴散性比當玻璃基底基板含有鋰時顯著高兩個數量級。此觀測到之行為亦可指示水合氫離子為擴散至玻璃基底基板內之主要單價含氫物質。在下表I中報告用於鹼離子及水合氫離子之離子半徑。如表I中所展示,銣及銫具有比水合氫離子顯著大之離子半徑,此可導致比針對鉀觀測到之氫擴散性高的氫擴散性。
Without wishing to be bound by any particular theory, the hydrogen-containing layer of the glass substrate may be the result of interdiffusion of the hydrogen species with respect to ions contained in the composition of the glass substrate. The monovalent hydrogen-containing substance (such as H 3 O + and/or H + ) may replace the alkali ions contained in the glass base substrate composition to form a glass substrate article. The size of the alkali ion replaced by the hydrogen-containing substance has an influence on the diffusibility of the hydrogen-containing substance in the glass base substrate because the larger alkali ion generates a large void space which contributes to the mutual diffusion mechanism. For example, hydronium ions (H 3 O + ) have an ionic radius that is close to the ionic radius of potassium and much larger than the ionic radius of lithium. It was observed that when the glass base substrate contains potassium, the diffusibility of the hydrogen-containing substance in the glass base substrate is significantly two orders of magnitude higher than when the glass base substrate contains lithium. This observed behavior may also indicate that the hydronium ion is a major monovalent hydrogen-containing species that diffuses into the glass substrate. The ionic radii for the alkali ions and hydronium ions are reported in Table I below. As shown in Table I, ruthenium and osmium have significantly larger ionic radii than hydronium ions, which can result in higher hydrogen diffusivity than hydrogen observed for potassium.

在一些實施例中,具有含氫離子之玻璃基底基板中的鹼離子之替換可產生自玻璃基底物件之表面延伸至玻璃基底物件內至一壓縮深度的一壓縮應力層。如本文中所使用,壓縮深度(depth of layer; DOC)意謂玻璃基底物件中之應力自壓縮改變至拉伸處之深度。因此,玻璃基底物件亦含有具有一最大中央拉伸(central tension; CT)之一拉伸應力區域,使得在玻璃基底物件內之力平衡。不希望受任何理論束縛,壓縮應力區域可為具有大於其替換之離子之一離子半徑的含氫離子之交換之結果。In some embodiments, the replacement of the alkali ions in the glass base substrate having hydrogen ions can result from a compressive stress layer extending from the surface of the glass substrate article into the glass substrate article to a compression depth. As used herein, the depth of layer (DOC) means that the stress in the glass substrate article changes from compression to depth at the stretch. Therefore, the glass substrate article also contains a region of tensile stress having a maximum central tension (CT) such that the force within the glass substrate article is balanced. Without wishing to be bound by any theory, the region of compressive stress may be the result of an exchange of hydrogen-containing ions having an ionic radius greater than one of the ions it replaces.

在一些實施例中,壓縮應力層可包括大於或等於100 MPa之一壓縮應力,諸如,大於或等於105 MPa、大於或等於110 MPa、大於或等於115 MPa、大於或等於120 MPa、大於或等於125 MPa、大於或等於130 MPa、大於或等於135 MPa或更大。在一些實施例中,壓縮應力層可包括自大於或等於100 MPa至小於或等於150 MPa之一壓縮應力,諸如,自大於或等於105 MPa至小於或等於145 MPa、自大於或等於110 MPa至小於或等於140 MPa、自大於或等於115 MPa至小於或等於135 MPa、自大於或等於120 MPa至小於或等於130 MPa、125 MPa或自此等端點中之任何者形成之任何子範圍。In some embodiments, the compressive stress layer can include one or more compressive stresses greater than or equal to 100 MPa, such as greater than or equal to 105 MPa, greater than or equal to 110 MPa, greater than or equal to 115 MPa, greater than or equal to 120 MPa, greater than or equal to 125 MPa, greater than or equal to 130 MPa, greater than or equal to 135 MPa or greater. In some embodiments, the compressive stress layer may comprise a compressive stress from one of greater than or equal to 100 MPa to less than or equal to 150 MPa, such as from greater than or equal to 105 MPa to less than or equal to 145 MPa, from greater than or equal to 110 MPa to Less than or equal to 140 MPa, from greater than or equal to 115 MPa to less than or equal to 135 MPa, from greater than or equal to 120 MPa to less than or equal to 130 MPa, 125 MPa, or any sub-range formed from any of the endpoints.

在一些實施例中,壓縮應力層之DOC可大於或等於75 MPa,諸如,大於或等於80 MPa、大於或等於85 MPa、大於或等於90 MPa、大於或等於95 MPa、大於或等於100 MPa或更大。在一些實施例中,壓縮應力層之DOC可處於自大於或等於75 μm至小於或等於115 μm,諸如,自大於或等於80 μm至小於或等於110 μm、自大於或等於85 μm至小於或等於105 μm、自大於或等於90 μm至小於或等於100 μm、95 μm或可自此等端點中之任何者形成之任何子範圍。In some embodiments, the compressive stress layer may have a DOC greater than or equal to 75 MPa, such as greater than or equal to 80 MPa, greater than or equal to 85 MPa, greater than or equal to 90 MPa, greater than or equal to 95 MPa, greater than or equal to 100 MPa, or Bigger. In some embodiments, the DOC of the compressive stress layer can be from greater than or equal to 75 μm to less than or equal to 115 μm, such as from greater than or equal to 80 μm to less than or equal to 110 μm, from greater than or equal to 85 μm to less than or Equal to 105 μm, from greater than or equal to 90 μm to less than or equal to 100 μm, 95 μm or any sub-range that can be formed from any of these endpoints.

在一些實施例中,玻璃基底物件可具有大於或等於0.05t 之一DOC,其中t為玻璃基底物件之厚度,諸如,大於或等於0.06t 、大於或等於0.07t 、大於或等於0.08t 、大於或等於0.09t 、大於或等於0.10t 、大於或等於0.11t 、大於或等於0.12t 或更大。在一些實施例中,玻璃基底物件可具有自大於或等於0.05t 至小於或等於0.20t 之一DOC,諸如,自大於或等於0.06t 至小於或等於0.19t 、自大於或等於0.07t 至小於或等於0.18t 、自大於或等於0.08t 至小於或等於0.17t 、自大於或等於0.09t 至小於或等於0.16t 、自大於或等於0.10t 至小於或等於0.15t 、自大於或等於0.11t 至小於或等於0.14t 、自大於或等於0.12t 至小於或等於0.13t 或自此等端點中之任何者形成之任何子範圍。In some embodiments, the glass substrate article may be one of greater than or equal 0.05 t DOC, where t is the thickness of the glass substrate article, such as greater than or equal to 0.06 t, 0.07 t is greater than, or equal to, greater than or equal to 0.08 t, greater than Or equal to 0.09 t , greater than or equal to 0.10 t , greater than or equal to 0.11 t , greater than or equal to 0.12 t or greater. In some embodiments, the glass substrate article can have a DOC from greater than or equal to 0.05 t to less than or equal to 0.20 t , such as from greater than or equal to 0.06 t to less than or equal to 0.19 t , from greater than or equal to 0.07 t to less than Or equal to 0.18 t , from greater than or equal to 0.08 t to less than or equal to 0.17 t , from greater than or equal to 0.09 t to less than or equal to 0.16 t , from greater than or equal to 0.10 t to less than or equal to 0.15 t , from greater than or equal to 0.11 t Up to or less than 0.14 t , from greater than or equal to 0.12 t to less than or equal to 0.13 t or any subrange formed from any of the endpoints.

在一些實施例中,玻璃基底物件之CT可大於或等於10 Mpa,諸如,大於或等於11 MPa、大於或等於12 MPa、大於或等於13 MPa、大於或等於14 MPa、大於或等於15 MPa、大於或等於16 MPa、大於或等於17 MPa、大於或等於18 MPa、大於或等於19 MPa、大於或等於20 MPa、大於或等於22 MPa、大於或等於24 MPa、大於或等於26 MPa、大於或等於28 MPa、大於或等於30 MPa、大於或等於32 MPa或更大。在一些實施例中,玻璃基底物件之CT可自大於或等於10 Mpa至小於或等於35 MPa,諸如,自大於或等於11 Mpa至小於或等於34 MPa、自大於或等於12 Mpa至小於或等於33 MPa、自大於或等於13 Mpa至小於或等於32 MPa、自大於或等於14 Mpa至小於或等於32 MPa、自大於或等於15 Mpa至小於或等於31 MPa、自大於或等於16 Mpa至小於或等於30 MPa、自大於或等於17 Mpa至小於或等於28 MPa、自大於或等於18 Mpa至小於或等於26 MPa、自大於或等於19 Mpa至小於或等於24 MPa、自大於或等於20 Mpa至小於或等於22 MPa或自此等端點中之任何者形成之任何子範圍。In some embodiments, the CT of the glass substrate article can be greater than or equal to 10 Mpa, such as greater than or equal to 11 MPa, greater than or equal to 12 MPa, greater than or equal to 13 MPa, greater than or equal to 14 MPa, greater than or equal to 15 MPa, Greater than or equal to 16 MPa, greater than or equal to 17 MPa, greater than or equal to 18 MPa, greater than or equal to 19 MPa, greater than or equal to 20 MPa, greater than or equal to 22 MPa, greater than or equal to 24 MPa, greater than or equal to 26 MPa, greater than or Equal to 28 MPa, greater than or equal to 30 MPa, greater than or equal to 32 MPa or greater. In some embodiments, the CT of the glass substrate article can be from greater than or equal to 10 MPa to less than or equal to 35 MPa, such as from greater than or equal to 11 MPa to less than or equal to 34 MPa, from greater than or equal to 12 MPa to less than or equal to 33 MPa, from greater than or equal to 13 Mpa to less than or equal to 32 MPa, from greater than or equal to 14 Mpa to less than or equal to 32 MPa, from greater than or equal to 15 Mpa to less than or equal to 31 MPa, from greater than or equal to 16 Mpa to less than Or equal to 30 MPa, from greater than or equal to 17 Mpa to less than or equal to 28 MPa, from greater than or equal to 18 Mpa to less than or equal to 26 MPa, from greater than or equal to 19 Mpa to less than or equal to 24 MPa, from greater than or equal to 20 Mpa To any subrange that is less than or equal to 22 MPa or any of these endpoints.

使用諸如由Orihara Industrial Co., Ltd.(日本)製造之FSM-6000(FSM)之市售儀器,藉由表面應力計來量測壓縮應力(包括表面CS)。表面應力量測結果依賴於與玻璃之雙折射有關的應力光學係數(stress optical coefficient; SOC)之準確量測。SOC又根據在題為「Standard Test Method for Measurement of Glass Stress-Optical Coefficient」之ASTM標準C770-16中描述之程序C(玻璃碟方法)來量測,該標準之內容被以引用的方式全部併入本文中。DOC係藉由FSM量測。使用此項技術中已知之散射光偏光鏡(SCALP)來量測最大中央拉伸(central tension; CT)值。The compressive stress (including the surface CS) was measured by a surface stress meter using a commercially available instrument such as FSM-6000 (FSM) manufactured by Orihara Industrial Co., Ltd. (Japan). The surface stress measurement results depend on an accurate measurement of the stress optical coefficient (SOC) associated with the birefringence of the glass. The SOC is further measured according to the procedure C (glass dish method) described in ASTM Standard C770-16 entitled "Standard Test Method for Measurement of Glass Stress-Optical Coefficient", the contents of which are incorporated by reference. Into this article. The DOC is measured by FSM. The maximum central tension (CT) value is measured using a scattered light polarizer (SCALP) known in the art.

玻璃基底物件可自具有任何適當組成之玻璃基底基板形成。可具體地選擇玻璃基底基板之組成以促進含氫物質之擴散,使得可高效地形成包括一含氫層之玻璃基底物件。在一些實施例中,玻璃基底基板可具有包括SiO2 、Al2 O3 及P2 O5 之一組成。在一些實施例中,玻璃基底基板可另外包括鹼金屬氧化物,諸如,Li2 O、Na2 O、K2 O、Rb2 O及Cs2 O中之至少一者。在一些實施例中,玻璃基底基板可實質上無或無鋰及鈉中之至少一者。在一些實施例中,在含氫物質至玻璃基底基板內之擴散後,玻璃基底物件可具有與玻璃基底基板之組成大致相同之一總組成。在一些實施例中,氫物質可不擴散至該玻璃基底物件之中心。換言之,玻璃基底物件之中心為受到水蒸氣處理最小影響之區。為此原因,在於一含水環境中處理前,玻璃基底物件之中心可具有與玻璃基底基板之組成實質上相同或相同之一組成。The glass substrate article can be formed from a glass substrate having any suitable composition. The composition of the glass base substrate can be specifically selected to promote diffusion of the hydrogen-containing substance, so that the glass substrate article including a hydrogen-containing layer can be efficiently formed. In some embodiments, the glass base substrate may have a composition including one of SiO 2 , Al 2 O 3 , and P 2 O 5 . In some embodiments, the glass base substrate may additionally include an alkali metal oxide such as at least one of Li 2 O, Na 2 O, K 2 O, Rb 2 O, and Cs 2 O. In some embodiments, the glass base substrate can be substantially free or free of at least one of lithium and sodium. In some embodiments, after diffusion of the hydrogen-containing material into the glass substrate, the glass substrate article can have a total composition that is substantially the same as the composition of the glass substrate. In some embodiments, the hydrogen species may not diffuse to the center of the glass substrate article. In other words, the center of the glass substrate is the area that is least affected by the steam treatment. For this reason, the center of the glass substrate article may have substantially the same or the same composition as the composition of the glass substrate before processing in an aqueous environment.

玻璃基底基板可包括任何適當量之SiO2 。SiO2 為最大成分,且因而,SiO2 為自玻璃組合物形成的玻璃網路之主要成分。若玻璃組合物中的SiO2 之濃度過高,則玻璃組合物之可形成性可減小,因為SiO2 之較高濃度增加了熔化玻璃之困難,此又不利地影響玻璃之可形成性。在一些實施例中,玻璃基底基板可包括自大於或等於45莫耳%至小於或等於75莫耳%之量的SiO2 ,諸如,自大於或等於46莫耳%至小於或等於74莫耳%、自大於或等於47莫耳%至小於或等於73莫耳%、自大於或等於48莫耳%至小於或等於72莫耳%、自大於或等於49莫耳%至小於或等於71莫耳%、自大於或等於50莫耳%至小於或等於70莫耳%、自大於或等於51莫耳%至小於或等於69莫耳%、自大於或等於52莫耳%至小於或等於68莫耳%、自大於或等於53莫耳%至小於或等於67莫耳%、自大於或等於54莫耳%至小於或等於66莫耳%、自大於或等於55莫耳%至小於或等於65莫耳%、自大於或等於56莫耳%至小於或等於64莫耳%、自大於或等於57莫耳%至小於或等於63莫耳%、自大於或等於58莫耳%至小於或等於62莫耳%、自大於或等於59莫耳%至小於或等於61莫耳%、60莫耳%或由此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於55莫耳%至小於或等於69莫耳%之量的SiO2 ,諸如,自大於或等於58莫耳%至小於或等於63莫耳%或自此等端點中之任何者形成之任何子範圍。The glass substrate can include any suitable amount of SiO 2 . SiO 2 is the largest component, and thus, SiO 2 is a main component of the glass network formed from the glass composition. If the concentration of SiO 2 in the glass composition is too high, the formability of the glass composition can be reduced because the higher concentration of SiO 2 increases the difficulty of melting the glass, which adversely affects the formability of the glass. In some embodiments, the glass base substrate can include SiO 2 in an amount from greater than or equal to 45 mole % to less than or equal to 75 mole %, such as from greater than or equal to 46 mole % to less than or equal to 74 moles %, from greater than or equal to 47% by mole to less than or equal to 73% by mole, from greater than or equal to 48% by mole to less than or equal to 72% by mole, from greater than or equal to 49% by mole to less than or equal to 71% Ear %, from greater than or equal to 50 mole % to less than or equal to 70 mole %, from greater than or equal to 51 mole % to less than or equal to 69 mole %, from greater than or equal to 52 mole % to less than or equal to 68 Molar%, from greater than or equal to 53% by mole to less than or equal to 67% by mole, from greater than or equal to 54% by mole to less than or equal to 66% by mole, from greater than or equal to 55% by mole to less than or equal to 65 mol%, from greater than or equal to 56 mol% to less than or equal to 64 mol%, from greater than or equal to 57 mol% to less than or equal to 63 mol%, from greater than or equal to 58 mol% to less than or Equivalent to 62 mole %, from greater than or equal to 59 mole % to less than or equal to 61 mole %, 60 mole % or any subrange formed by any of the endpoints. In some embodiments, the glass base substrate can include SiO 2 in an amount from greater than or equal to 55 mole % to less than or equal to 69 mole %, such as from greater than or equal to 58 mole % to less than or equal to 63 moles % or any sub-range formed from any of these endpoints.

玻璃基底基板可包括任何適當量之Al2 O3 。Al2 O3 可充當玻璃網路形成者,類似於SiO2 。Al2 O3 歸因於其在自玻璃組合物形成之玻璃熔體中的四面體配位,可增大玻璃組合物之黏度,從而當Al2 O3 之量過高時,降低玻璃組合物之可形成性。然而,當Al2 O3 之濃度對照SiO2 之濃度及玻璃組合物中的鹼氧化物之濃度平衡時,Al2 O3 可降低玻璃熔體之液線溫度,藉此增強液線黏度且改良玻璃組合物與某些形成製程(諸如,融合形成製程)之相容性。玻璃基底基板中的Al2 O3 之包括防止相位分離且減少玻璃中的非橋氧(non-bridging oxygen; NBO)之數目。另外,Al2 O3 可改良離子交換之有效性。在一些實施例中,玻璃基底基板可包括自大於或等於3莫耳%至小於或等於20莫耳%之量的Al2 O3 ,諸如,自大於或等於4莫耳%至小於或等於19莫耳%、自大於或等於5莫耳%至小於或等於18莫耳%、自大於或等於6莫耳%至小於或等於17莫耳%、自大於或等於7莫耳%至小於或等於16莫耳%、自大於或等於8莫耳%至小於或等於15莫耳%、自大於或等於9莫耳%至小於或等於14莫耳%、自大於或等於10莫耳%至小於或等於13莫耳%、自大於或等於11莫耳%至小於或等於12莫耳%或由此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於5莫耳%至小於或等於15莫耳%之量的Al2 O3 ,諸如,自大於或等於7莫耳%至小於或等於14莫耳%或自此等端點中之任何者形成之任何子範圍。The glass substrate can include any suitable amount of Al 2 O 3 . Al 2 O 3 acts as a glass network former, similar to SiO 2 . Al 2 O 3 can increase the viscosity of the glass composition due to its tetrahedral coordination in the glass melt formed from the glass composition, thereby lowering the glass composition when the amount of Al 2 O 3 is too high Formability. However, when the concentration of Al 2 O 3 is balanced against the concentration of SiO 2 and the concentration of the alkali oxide in the glass composition, Al 2 O 3 can lower the liquidus temperature of the glass melt, thereby enhancing the liquidus viscosity and improving The compatibility of the glass composition with certain forming processes, such as fusion forming processes. The Al 2 O 3 in the glass base substrate includes preventing phase separation and reducing the number of non-bridging oxygen (NBO) in the glass. In addition, Al 2 O 3 can improve the effectiveness of ion exchange. In some embodiments, the glass base substrate can include Al 2 O 3 in an amount from greater than or equal to 3 mole % to less than or equal to 20 mole %, such as from greater than or equal to 4 mole % to less than or equal to 19 Molar%, from greater than or equal to 5 mol% to less than or equal to 18 mol%, from greater than or equal to 6 mol% to less than or equal to 17 mol%, from greater than or equal to 7 mol% to less than or equal to 16 mol%, from greater than or equal to 8 mol% to less than or equal to 15 mol%, from greater than or equal to 9 mol% to less than or equal to 14 mol%, from greater than or equal to 10 mol% to less than or Equal to 13 mole %, from greater than or equal to 11 mole % to less than or equal to 12 mole % or any subrange formed by any of the endpoints. In some embodiments, the glass base substrate can include Al 2 O 3 in an amount from greater than or equal to 5 mole % to less than or equal to 15 mole %, such as from greater than or equal to 7 mole % to less than or equal to 14 Mol% or any sub-range formed from any of these endpoints.

玻璃基底基板可包括足以產生所要的氫擴散性之任何量之P2 O5 。玻璃基底基板中的磷之包括促進較快之相互擴散,與交換離子對無關。因此,含磷之玻璃基底基板允許包括含氫層的玻璃基底物件之高效形成。P2 O5 之包括亦允許在相對短的處理時間中生成具有深的層深度(例如,大於約10 μm)之玻璃基底物件。在一些實施例中,玻璃基底基板可包括自大於或等於4莫耳%至小於或等於15莫耳%之量的P2 O5 ,諸如,自大於或等於5莫耳%至小於或等於14莫耳%、自大於或等於6莫耳%至小於或等於13莫耳%、自大於或等於7莫耳%至小於或等於12莫耳%、自大於或等於8莫耳%至小於或等於11莫耳%、自大於或等於9莫耳%至小於或等於10莫耳%或由此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於5莫耳%至小於或等於15莫耳%之量的P2 O5 ,諸如,自大於或等於6莫耳%至小於或等於15莫耳%、自大於或等於5莫耳%至小於或等於10莫耳%、自大於或等於6莫耳%至小於或等於10莫耳%、自大於或等於7莫耳%至小於或等於10莫耳%或由此等端點中之任何者形成之任何子範圍。The glass substrate can include any amount of P 2 O 5 sufficient to produce the desired hydrogen diffusivity. The inclusion of phosphorus in the glass-based substrate promotes faster interdiffusion, independent of the exchange of ion pairs. Therefore, the phosphorus-containing glass base substrate allows efficient formation of a glass substrate article including a hydrogen-containing layer. The inclusion of P 2 O 5 also allows for the creation of glass substrate articles having a deep layer depth (e.g., greater than about 10 μm) in relatively short processing times. In some embodiments, the glass base substrate can include P 2 O 5 in an amount from greater than or equal to 4 mole % to less than or equal to 15 mole %, such as from greater than or equal to 5 mole % to less than or equal to 14 Molar%, from greater than or equal to 6 mol% to less than or equal to 13 mol%, from greater than or equal to 7 mol% to less than or equal to 12 mol%, from greater than or equal to 8 mol% to less than or equal to 11 mole %, from greater than or equal to 9 mole % to less than or equal to 10 mole % or any sub-range formed by any of the endpoints. In some embodiments, the glass base substrate can include P 2 O 5 in an amount from greater than or equal to 5 mole % to less than or equal to 15 mole %, such as from greater than or equal to 6 mole % to less than or equal to 15 Molar%, from greater than or equal to 5 mol% to less than or equal to 10 mol%, from greater than or equal to 6 mol% to less than or equal to 10 mol%, from greater than or equal to 7 mol% to less than or equal to Any of the sub-ranges formed by any of the 10% or any of the endpoints.

玻璃基底基板可包括任何適當量之鹼金屬氧化物。鹼金屬氧化物促進離子交換。玻璃組合物中的鹼金屬氧化物(例如,Li2 O、Na2 O及K2 O以及包括Cs2 O及Rb2 O之其他鹼金屬氧化物)之總和可被稱作「R2 O」,且R2 O可按莫耳%來表達。在一些實施例中,玻璃基底基板可實質上無或無鋰及鈉中之至少一者。在一些實施例中,玻璃組合物包含大於或等於6莫耳%之量的R2 O,諸如,大於或等於7莫耳%、大於或等於8莫耳%、大於或等於9莫耳%、大於或等於10莫耳%、大於或等於11莫耳%、大於或等於12莫耳%、大於或等於13莫耳%、大於或等於14莫耳%、大於或等於15莫耳%、大於或等於16莫耳%、大於或等於17莫耳%、大於或等於18莫耳%、大於或等於19莫耳%、大於或等於20莫耳%、大於或等於21莫耳%、大於或等於22莫耳%、大於或等於23莫耳%或大於或等於24莫耳%。在一或多個實施例中,玻璃組合物包含小於或等於25莫耳%之量的R2 O,諸如,小於或等於24莫耳%、小於或等於23莫耳%、小於或等於22莫耳%、小於或等於21莫耳%、小於或等於20莫耳%、小於或等於19莫耳%、小於或等於18莫耳%、小於或等於17莫耳%、小於或等於16莫耳%、小於或等於15莫耳%、小於或等於14莫耳%、小於或等於13莫耳%、小於或等於12莫耳%、小於或等於11莫耳%、小於或等於10莫耳%、小於或等於9莫耳%、小於或等於8莫耳%或小於或等於7莫耳%。應理解,在實施例中,以上範圍中之任何者可與任一其他範圍組合。在一些實施例中,玻璃組合物包含自大於或等於6.0莫耳%至小於或等於25.0莫耳%之量的R2 O,諸如,自大於或等於7.0莫耳%至小於或等於24.0莫耳%、自大於或等於8.0莫耳%至小於或等於23.0莫耳%、自大於或等於9.0莫耳%至小於或等於22.0莫耳%、自大於或等於10.0莫耳%至小於或等於21.0莫耳%、自大於或等於11.0莫耳%至小於或等於20.0莫耳%、自大於或等於12.0莫耳%至小於或等於19.0莫耳%、自大於或等於13.0莫耳%至小於或等於18.0莫耳%、自大於或等於14.0莫耳%至小於或等於17.0莫耳%或自大於或等於15.0莫耳%至小於或等於16.0莫耳%,及在前述值之間的所有範圍及子範圍。The glass substrate can comprise any suitable amount of alkali metal oxide. The alkali metal oxide promotes ion exchange. The sum of alkali metal oxides (for example, Li 2 O, Na 2 O, and K 2 O, and other alkali metal oxides including Cs 2 O and Rb 2 O) in the glass composition may be referred to as "R 2 O". And R 2 O can be expressed in % by mole. In some embodiments, the glass base substrate can be substantially free or free of at least one of lithium and sodium. In some embodiments, the glass composition comprises R 2 O in an amount greater than or equal to 6 mole %, such as greater than or equal to 7 mole %, greater than or equal to 8 mole %, greater than or equal to 9 mole %, Greater than or equal to 10 mol%, greater than or equal to 11 mol%, greater than or equal to 12 mol%, greater than or equal to 13 mol%, greater than or equal to 14 mol%, greater than or equal to 15 mol%, greater than or Equal to 16% by mole, greater than or equal to 17% by mole, greater than or equal to 18% by mole, greater than or equal to 19% by mole, greater than or equal to 20% by mole, greater than or equal to 21% by mole, greater than or equal to 22 Mole%, greater than or equal to 23 mol% or greater than or equal to 24 mol%. In one or more embodiments, the glass composition comprises R 2 O in an amount less than or equal to 25 mole %, such as less than or equal to 24 mole %, less than or equal to 23 mole %, less than or equal to 22 moles Ear %, less than or equal to 21 mole %, less than or equal to 20 mole %, less than or equal to 19 mole %, less than or equal to 18 mole %, less than or equal to 17 mole %, less than or equal to 16 mole % Less than or equal to 15% by mole, less than or equal to 14% by mole, less than or equal to 13% by mole, less than or equal to 12% by mole, less than or equal to 11% by mole, less than or equal to 10% by mole, less than Or equal to 9 mole %, less than or equal to 8 mole % or less than or equal to 7 mole %. It should be understood that in the embodiments, any of the above ranges may be combined with any other range. In some embodiments, the glass composition comprises R 2 O in an amount from greater than or equal to 6.0 mole % to less than or equal to 25.0 mole %, such as from greater than or equal to 7.0 mole % to less than or equal to 24.0 moles %, from greater than or equal to 8.0 mol% to less than or equal to 23.0 mol%, from greater than or equal to 9.0 mol% to less than or equal to 22.0 mol%, from greater than or equal to 10.0 mol% to less than or equal to 21.0 m Ear %, from greater than or equal to 11.0 mol% to less than or equal to 20.0 mol%, from greater than or equal to 12.0 mol% to less than or equal to 19.0 mol%, from greater than or equal to 13.0 mol% to less than or equal to 18.0 Molar%, from greater than or equal to 14.0 mol% to less than or equal to 17.0 mol% or from greater than or equal to 15.0 mol% to less than or equal to 16.0 mol%, and all ranges and subranges between the foregoing values .

在一些實施例中,鹼金屬氧化物可為K2 O。K2 O之包括允許在暴露於含水環境後氫物質至玻璃基板內之高效交換。在一些實施例中,玻璃基底基板可包括自大於或等於6莫耳%至小於或等於25莫耳%之量的K2 O,諸如,自大於或等於7莫耳%至小於或等於24莫耳%、自大於或等於8莫耳%至小於或等於23莫耳%、自大於或等於9莫耳%至小於或等於22莫耳%、自大於或等於10莫耳%至小於或等於21莫耳%、自大於或等於11莫耳%至小於或等於20莫耳%、自大於或等於12莫耳%至小於或等於19莫耳%、自大於或等於13莫耳%至小於或等於18莫耳%、自大於或等於14莫耳%至小於或等於17莫耳%或自大於或等於15莫耳%至小於或等於16莫耳%,或自此等端點中之任何者形成之任何子範圍。在一些實施例中,玻璃基底基板可包括自大於或等於10莫耳%至小於或等於25莫耳%之量的K2 O,諸如,自大於或等於10莫耳%至小於或等於20莫耳%、自大於或等於11莫耳%至小於或等於25莫耳%、自大於或等於11莫耳%至小於或等於20莫耳%、自大於或等於15莫耳%至小於或等於20莫耳%或自此等端點中之任何者形成之任何子範圍。In some embodiments, the alkali metal oxide can be K 2 O. The K 2 O includes an efficient exchange of hydrogen species into the glass substrate after exposure to an aqueous environment. In some embodiments, the glass base substrate can include K 2 O in an amount from greater than or equal to 6 mole % to less than or equal to 25 mole %, such as from greater than or equal to 7 mole % to less than or equal to 24 moles Ear %, from greater than or equal to 8 mole % to less than or equal to 23 mole %, from greater than or equal to 9 mole % to less than or equal to 22 mole %, from greater than or equal to 10 mole % to less than or equal to 21 Molar%, from greater than or equal to 11 mol% to less than or equal to 20 mol%, from greater than or equal to 12 mol% to less than or equal to 19 mol%, from greater than or equal to 13 mol% to less than or equal to 18 mol%, from greater than or equal to 14 mol% to less than or equal to 17 mol% or from greater than or equal to 15 mol% to less than or equal to 16 mol%, or form from any of these endpoints Any subrange. In some embodiments, the glass base substrate can include K 2 O in an amount from greater than or equal to 10 mole % to less than or equal to 25 mole %, such as from greater than or equal to 10 mole % to less than or equal to 20 moles Ear %, from greater than or equal to 11 mole % to less than or equal to 25 mole %, from greater than or equal to 11 mole % to less than or equal to 20 mole %, from greater than or equal to 15 mole % to less than or equal to 20 Mol% or any sub-range formed from any of these endpoints.

玻璃基底基板可包括任何適當量之Rb2 O。在一些實施例中,玻璃基底基板可包括自大於或等於0莫耳%至小於或等於10莫耳%之量的Rb2 O,諸如,自大於或等於1莫耳%至小於或等於9莫耳%、自大於或等於2莫耳%至小於或等於8莫耳%、自大於或等於3莫耳%至小於或等於7莫耳%、自大於或等於4莫耳%至小於或等於6莫耳%、5莫耳%或自此等端點中之任何者形成之任何子範圍。The glass substrate can include any suitable amount of Rb 2 O. In some embodiments, the glass base substrate can include Rb 2 O in an amount from greater than or equal to 0 mole % to less than or equal to 10 mole %, such as from greater than or equal to 1 mole % to less than or equal to 9 moles Ear %, from greater than or equal to 2 mole % to less than or equal to 8 mole %, from greater than or equal to 3 mole % to less than or equal to 7 mole %, from greater than or equal to 4 mole % to less than or equal to 6 Mole %, 5 mol % or any sub-range formed from any of these endpoints.

玻璃基底基板可包括任何適當量之Cs2 O。在一些實施例中,玻璃基底基板可包括自大於或等於0莫耳%至小於或等於10莫耳%之量的Cs2 O,諸如,自大於或等於1莫耳%至小於或等於9莫耳%、自大於或等於2莫耳%至小於或等於8莫耳%、自大於或等於3莫耳%至小於或等於7莫耳%、自大於或等於4莫耳%至小於或等於6莫耳%、5莫耳%或自此等端點中之任何者形成之任何子範圍。The glass substrate can include any suitable amount of Cs 2 O. In some embodiments, the glass base substrate can include Cs 2 O in an amount from greater than or equal to 0 mole % to less than or equal to 10 mole %, such as from greater than or equal to 1 mole % to less than or equal to 9 moles Ear %, from greater than or equal to 2 mole % to less than or equal to 8 mole %, from greater than or equal to 3 mole % to less than or equal to 7 mole %, from greater than or equal to 4 mole % to less than or equal to 6 Mole %, 5 mol % or any sub-range formed from any of these endpoints.

在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;自大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;自大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及自大於或等於6莫耳%至小於或等於25莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 45 mole % to less than or equal to 75 mole % SiO 2 ; from greater than or equal to 3 mole % to less than or Equal to 20 mol% of Al 2 O 3 ; from greater than or equal to 6 mol % to less than or equal to 15 mol % of P 2 O 5 ; and from greater than or equal to 6 mol % to less than or equal to 25 mol % K 2 O.

在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;自大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;自大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及自大於或等於11莫耳%至小於或等於25莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 45 mole % to less than or equal to 75 mole % SiO 2 ; from greater than or equal to 3 mole % to less than or Equal to 20 mol% of Al 2 O 3 ; from greater than or equal to 4 mol % to less than or equal to 15 mol % of P 2 O 5 ; and from greater than or equal to 11 mol % to less than or equal to 25 mol % K 2 O.

在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;自大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;自大於或等於6莫耳%至小於或等於10莫耳%之P2 O5 ;及自大於或等於10莫耳%至小於或等於20莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 55 mole % to less than or equal to 69 mole % SiO 2 ; from greater than or equal to 5 mole % to less than or Equal to 15 mol% of Al 2 O 3 ; from greater than or equal to 6 mol % to less than or equal to 10 mol % of P 2 O 5 ; and from greater than or equal to 10 mol % to less than or equal to 20 mol % K 2 O.

在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於55莫耳%至小於或等於69莫耳%之SiO2 ;自大於或等於5莫耳%至小於或等於15莫耳%之Al2 O3 ;自大於或等於5莫耳%至小於或等於10莫耳%之P2 O5 ;及自大於或等於11莫耳%至小於或等於20莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 55 mole % to less than or equal to 69 mole % SiO 2 ; from greater than or equal to 5 mole % to less than or Equal to 15 mol% of Al 2 O 3 ; from greater than or equal to 5 mol % to less than or equal to 10 mol % of P 2 O 5 ; and from greater than or equal to 11 mol % to less than or equal to 20 mol % K 2 O.

在一些實施例中,玻璃基底基板可具有包括以下各者之一組成:自大於或等於58莫耳%至小於或等於63莫耳%之SiO2 ;自大於或等於7莫耳%至小於或等於14莫耳%之Al2 O3 ;自大於或等於7莫耳%至小於或等於10莫耳%之P2 O5 ;及自大於或等於15莫耳%至小於或等於20莫耳%之K2 O。In some embodiments, the glass base substrate can have a composition comprising one of: from greater than or equal to 58 mole % to less than or equal to 63 mole % SiO 2 ; from greater than or equal to 7 mole % to less than or Equal to 14 mol% of Al 2 O 3 ; from greater than or equal to 7 mol % to less than or equal to 10 mol % of P 2 O 5 ; and from greater than or equal to 15 mol % to less than or equal to 20 mol % K 2 O.

在一些實施例中,玻璃基底基板可展現大於或等於5 kgf之一維氏開裂初始閾值,諸如,大於或等於6 kgf、大於或等於7 kgf、大於或等於8 kgf、大於或等於9 kgf、大於或等於10 kgf或更大。In some embodiments, the glass base substrate can exhibit an initial threshold of one or more of 5 kgf, such as greater than or equal to 6 kgf, greater than or equal to 7 kgf, greater than or equal to 8 kgf, greater than or equal to 9 kgf, Greater than or equal to 10 kgf or more.

玻璃基底基板可具有任何適當幾何形狀。在一些實施例中,玻璃基底基板可具有小於或等於2 mm之一厚度,諸如,小於或等於1 mm、小於或等於900 μm、小於或等於800 μm、小於或等於700 μm、小於或等於600 μm、小於或等於500 μm、小於或等於400 μm、小於或等於300 μm或更小。在一些實施例中,玻璃基底基板可已為板或薄片形。在一些其他實施例中,玻璃基底基板可具有2.5D或3D形狀。如本文中利用,「2.5D形狀」指一薄片形物件,其具有至少部分不平坦之至少一個主表面,及實質上平坦之一第二主表面。如本文中利用,「3D形狀」指具有至少部分不平坦之第一及第二相對主表面之物件。The glass substrate can have any suitable geometry. In some embodiments, the glass base substrate may have a thickness less than or equal to 2 mm, such as less than or equal to 1 mm, less than or equal to 900 μm, less than or equal to 800 μm, less than or equal to 700 μm, less than or equal to 600. Μm, less than or equal to 500 μm, less than or equal to 400 μm, less than or equal to 300 μm or less. In some embodiments, the glass base substrate may have been in the form of a sheet or a sheet. In some other embodiments, the glass base substrate can have a 2.5D or 3D shape. As used herein, "2.5D shape" refers to a sheet-like article having at least one major surface that is at least partially uneven, and substantially one of the second major surfaces. As used herein, "3D shape" refers to an article having first and second opposing major surfaces that are at least partially uneven.

玻璃基底物件可藉由在任何適當條件下暴露於水蒸氣自玻璃基底基板生產。可在任一適當元件(諸如,具有相對濕度控制之爐)中進行暴露。在一些實施例中,玻璃基底基板可暴露於具有大於或等於75%之一相對濕度的環境,諸如,大於或等於80%、大於或等於85%、大於或等於90%、大於或等於95%、大於或等於99%或更大。在一些實施例中,玻璃基底基板可暴露於具有100%相對濕度之環境。The glass substrate article can be produced from a glass substrate by exposure to water vapor under any suitable conditions. Exposure can be performed in any suitable component, such as a furnace with relative humidity control. In some embodiments, the glass base substrate can be exposed to an environment having a relative humidity of greater than or equal to 75%, such as greater than or equal to 80%, greater than or equal to 85%, greater than or equal to 90%, greater than or equal to 95%. , greater than or equal to 99% or greater. In some embodiments, the glass base substrate can be exposed to an environment having a relative humidity of 100%.

在一些實施例中,玻璃基底基板可暴露於處於大於或等於70℃之一溫度下的環境,諸如,大於或等於75℃、大於或等於80℃、大於或等於85℃、大於或等於90℃、大於或等於95℃、大於或等於100℃、大於或等於105℃、大於或等於110℃、大於或等於115℃、大於或等於120℃、大於或等於125℃、大於或等於130℃、大於或等於135℃、大於或等於140℃、大於或等於145℃、大於或等於150℃、大於或等於155℃、大於或等於160℃、大於或等於160℃、大於或等於165℃、大於或等於170℃、大於或等於175℃、大於或等於180℃、大於或等於185℃、大於或等於190℃、大於或等於195℃、大於或等於200℃或更大。在一些實施例中,玻璃基底基板可暴露於處於自大於或等於70℃至小於或等於210℃之一溫度下的環境,諸如,自大於或等於75℃至小於或等於205℃、自大於或等於80℃至小於或等於200℃、自大於或等於85℃至小於或等於195℃、自大於或等於90℃至小於或等於190℃、自大於或等於90℃至小於或等於185℃、自大於或等於100℃至小於或等於180℃、自大於或等於105℃至小於或等於175℃、自大於或等於110℃至小於或等於170℃、自大於或等於115℃至小於或等於165℃、自大於或等於120℃至小於或等於160℃、自大於或等於125℃至小於或等於155℃、自大於或等於130℃至小於或等於150℃、自大於或等於135℃至小於或等於145℃、140℃或自此等端點形成之任何子範圍。In some embodiments, the glass base substrate can be exposed to an environment at a temperature greater than or equal to 70 ° C, such as greater than or equal to 75 ° C, greater than or equal to 80 ° C, greater than or equal to 85 ° C, greater than or equal to 90 ° C. , greater than or equal to 95 ° C, greater than or equal to 100 ° C, greater than or equal to 105 ° C, greater than or equal to 110 ° C, greater than or equal to 115 ° C, greater than or equal to 120 ° C, greater than or equal to 125 ° C, greater than or equal to 130 ° C, greater than Or equal to 135 ° C, greater than or equal to 140 ° C, greater than or equal to 145 ° C, greater than or equal to 150 ° C, greater than or equal to 155 ° C, greater than or equal to 160 ° C, greater than or equal to 160 ° C, greater than or equal to 165 ° C, greater than or equal to 170 ° C, greater than or equal to 175 ° C, greater than or equal to 180 ° C, greater than or equal to 185 ° C, greater than or equal to 190 ° C, greater than or equal to 195 ° C, greater than or equal to 200 ° C or greater. In some embodiments, the glass base substrate can be exposed to an environment at a temperature from one greater than or equal to 70 ° C to less than or equal to 210 ° C, such as from greater than or equal to 75 ° C to less than or equal to 205 ° C, from greater than or Equivalent to 80 ° C to less than or equal to 200 ° C, from greater than or equal to 85 ° C to less than or equal to 195 ° C, from greater than or equal to 90 ° C to less than or equal to 190 ° C, from greater than or equal to 90 ° C to less than or equal to 185 ° C, from Greater than or equal to 100 ° C to less than or equal to 180 ° C, from greater than or equal to 105 ° C to less than or equal to 175 ° C, from greater than or equal to 110 ° C to less than or equal to 170 ° C, from greater than or equal to 115 ° C to less than or equal to 165 ° C From greater than or equal to 120 ° C to less than or equal to 160 ° C, from greater than or equal to 125 ° C to less than or equal to 155 ° C, from greater than or equal to 130 ° C to less than or equal to 150 ° C, from greater than or equal to 135 ° C to less than or equal to 145 ° C, 140 ° C or any sub-range formed from such endpoints.

在一些實施例中,玻璃基底基板可暴露於含水蒸氣之環境達足以產生所要的含氫物質擴散程度及所要的層深度之時間週期。在一些實施例中,玻璃基底基板可暴露於含水蒸氣之環境達大於或等於1天,諸如,大於或等於2天、大於或等於3天、大於或等於4天、大於或等於5天、大於或等於6天、大於或等於7天、大於或等於8天、大於或等於9天、大於或等於10天、大於或等於15天、大於或等於20天、大於或等於25天、大於或等於30天、大於或等於35天、大於或等於40天、大於或等於45天、大於或等於50天、大於或等於55天、大於或等於60天、大於或等於65天或更多。在一些實施例中,玻璃基底基板可暴露於含水蒸氣之環境達大於或等於1天至小於或等於70天之一時間週期,諸如,自大於或等於2天至小於或等於65天、自大於或等於3天至小於或等於60天、自大於或等於4天至小於或等於55天、自大於或等於5天至小於或等於45天、自大於或等於6天至小於或等於40天、自大於或等於7天至小於或等於35天、自大於或等於8天至小於或等於30天、自大於或等於9天至小於或等於25天、自大於或等於10天至小於或等於20天、15天或自此等端點中之任何者形成之任何子範圍。可修改該等暴露條件以減少產生至玻璃基底基板內之所要的含氫物質擴散量所必要之時間。舉例而言,可增大溫度及/或相對濕度以減少達成至玻璃基底基板內的所要程度之含氫物質擴散及層深度所需之時間。In some embodiments, the glass substrate can be exposed to an aqueous vapor environment for a period of time sufficient to produce a desired degree of diffusion of the hydrogen-containing material and a desired layer depth. In some embodiments, the glass substrate can be exposed to an aqueous vapor environment for greater than or equal to 1 day, such as greater than or equal to 2 days, greater than or equal to 3 days, greater than or equal to 4 days, greater than or equal to 5 days, greater than Or equal to 6 days, greater than or equal to 7 days, greater than or equal to 8 days, greater than or equal to 9 days, greater than or equal to 10 days, greater than or equal to 15 days, greater than or equal to 20 days, greater than or equal to 25 days, greater than or equal to 30 days, greater than or equal to 35 days, greater than or equal to 40 days, greater than or equal to 45 days, greater than or equal to 50 days, greater than or equal to 55 days, greater than or equal to 60 days, greater than or equal to 65 days or more. In some embodiments, the glass substrate can be exposed to an aqueous vapor environment for a period of time greater than or equal to 1 day to less than or equal to 70 days, such as from greater than or equal to 2 days to less than or equal to 65 days, from greater than Or equal to 3 days to less than or equal to 60 days, from greater than or equal to 4 days to less than or equal to 55 days, from greater than or equal to 5 days to less than or equal to 45 days, from greater than or equal to 6 days to less than or equal to 40 days, From greater than or equal to 7 days to less than or equal to 35 days, from greater than or equal to 8 days to less than or equal to 30 days, from greater than or equal to 9 days to less than or equal to 25 days, from greater than or equal to 10 days to less than or equal to 20 Days, 15 days, or any sub-range formed by any of these endpoints. These exposure conditions can be modified to reduce the time necessary to produce the desired amount of diffusion of the hydrogen-containing material into the glass substrate. For example, the temperature and/or relative humidity can be increased to reduce the time required to achieve a desired degree of hydrogen species diffusion and layer depth into the glass substrate.

本文中揭示之玻璃基底物件可併入至另一物件內,諸如,具有一顯示器之物件(或顯示物件)(例如,消費者電子元件,包括行動電話、平板電腦、電腦、導航系統、可佩戴元件(例如,手錶)及類似者)、建築物件、交通物件(例如,汽車、火車、飛機、海輪等)、電器物件,或需要某一透明度、耐刮擦性、耐磨或其組合之任一物件。併有本文中揭示之玻璃基底物件中之任何者之一例示性物件展示於第2A圖及第2B圖中。具體言之,第2A圖及第2B圖展示一消費者電子元件200,其包括:具有前部204、後部206及側表面208之一外殼202;電組件(未展示),其至少部分在外殼內部或全部在外殼內且包括至少一控制器、一記憶體及在外殼之前表面處或鄰近外殼之前表面的一顯示器210;及在外殼之前表面處或上之一蓋基板212,使得其在顯示器上。在一些實施例中,蓋基板212及外殼202中之一者之至少一部分可包括本文中揭示的玻璃基底物件中之任何者。
例示性實施例
The glass substrate article disclosed herein can be incorporated into another article, such as an item (or display item) having a display (eg, consumer electronic components, including mobile phones, tablets, computers, navigation systems, wearable Components (eg, watches) and the like), building parts, traffic items (eg, cars, trains, airplanes, sea wheels, etc.), electrical items, or require some transparency, scratch resistance, wear resistance, or a combination thereof Any object. An exemplary article of any of the glass substrate articles disclosed herein is shown in Figures 2A and 2B. In particular, Figures 2A and 2B show a consumer electronic component 200 comprising: a housing 202 having a front portion 204, a rear portion 206 and a side surface 208; an electrical component (not shown) at least partially in the housing Internal or wholly within the housing and including at least one controller, a memory and a display 210 at or adjacent the front surface of the housing; and a cover substrate 212 at or above the front surface of the housing such that it is on the display on. In some embodiments, at least a portion of one of the lid substrate 212 and the outer shell 202 can comprise any of the glass substrate articles disclosed herein.
Illustrative embodiment

特別適合於本文中的玻璃基底物件之形成之玻璃組合物形成至玻璃基底基板內。下表II中描述實例1至6之組成。使用ASTM C693-93(2013)之浮力方法判定密度。在溫度範圍25℃至300℃上之線性熱膨脹係數(CTE)係按10-7 /℃來表達,且根據ASTM E228-11使用推桿膨脹計來判定。使用ASTM C598-93(2013)之射束彎曲黏度方法來判定應變點及退火點。使用ASTM C1351M-96(2012)之平行板黏度方法判定軟化點。根據題為「Standard Practice for Measuring Viscosity of Glass Above the Softening Point」之ASTM C965-96(2012),針對生成之組合物,量測玻璃具有200 P、35,000 P及200,000 P之一黏度的溫度。
A glass composition that is particularly suitable for the formation of the glass substrate article herein is formed into a glass substrate. The compositions of Examples 1 to 6 are described in Table II below. The density was determined using the buoyancy method of ASTM C693-93 (2013). The coefficient of linear thermal expansion (CTE) over the temperature range of 25 ° C to 300 ° C is expressed as 10 -7 / ° C and is determined according to ASTM E228-11 using a putter dilatometer. The beam bending viscosity method of ASTM C598-93 (2013) was used to determine the strain point and the annealing point. The softening point was determined using the parallel plate viscosity method of ASTM C1351M-96 (2012). According to ASTM C965-96 (2012) entitled "Standard Practice for Measuring Viscosity of Glass Above the Softening Point", the measured glass has a temperature of one of 200 P, 35,000 P and 200,000 P for the resulting composition.

將包括實例1之組成且具有1 mm之一厚度的玻璃基底基板暴露於85%相對濕度之一環境達65天以形成包括本文中描述之類型的一含氫層之玻璃基底物件。A glass substrate substrate comprising the composition of Example 1 and having a thickness of 1 mm was exposed to one of 85% relative humidity for 65 days to form a glass substrate article comprising a hydrogen containing layer of the type described herein.

在暴露前及後,藉由SIMS量測含氫層之深度。SIMS氫濃度量測之結果展示於第3圖中,其中原樣玻璃基底基板氫濃度曲線301具有約5 μm之一層深度,且玻璃基底物件氫濃度曲線302具有約30 μm之一層深度。量測暴露後玻璃基底物件至約25 μm之深度,且外推曲線303以判定該層深度。基於量測之值,使用通式DOL = sqrt(D•time)來計算氫擴散性(D)。The depth of the hydrogen containing layer was measured by SIMS before and after exposure. The results of the SIMS hydrogen concentration measurement are shown in Fig. 3, wherein the original glass substrate hydrogen concentration curve 301 has a layer depth of about 5 μm, and the glass substrate object hydrogen concentration curve 302 has a layer depth of about 30 μm. The exposed glass substrate was measured to a depth of about 25 μm and the curve 303 was extrapolated to determine the depth of the layer. Based on the measured values, the hydrogen diffusivity (D) is calculated using the general formula DOL = sqrt(D•time).

在暴露於含水蒸氣之環境前及後,量測維氏凹痕開裂閾值。在分別處於5 kgf及10 kgf下之壓痕後,暴露前玻璃基底基板之維氏凹痕之結果展示於第4圖及第5圖中。如在第4圖及第5圖中展示,玻璃基底基板具有高於5 kgf但低於10 kgf之一維氏開裂初始閾值。在分別處於5 kgf及、10 kgf及20 kgf下之壓痕後,暴露之玻璃基底物件之維氏凹痕之結果展示於第6圖、第7圖及第8圖中。如由第6圖、第7圖及第8圖演示,玻璃基底物件之維氏凹痕開裂閾值大於20 kgf。The Vickers dent cracking threshold was measured before and after exposure to an aqueous vapor environment. The results of the Vickers dents of the pre-exposed glass substrate after exposure at 5 kgf and 10 kgf, respectively, are shown in Figures 4 and 5. As shown in Figures 4 and 5, the glass base substrate has an initial threshold of Vickers cracking above 5 kgf but below 10 kgf. The results of the Vickers dents of the exposed glass substrate were shown in Figures 6, 7, and 8 after indentations at 5 kgf and 10 kgf and 20 kgf, respectively. As shown in Figures 6, 7, and 8, the Vickers dent cracking threshold for glass substrate articles is greater than 20 kgf.

包括比較實例1至3之組成且具有1 mm之厚度的玻璃基底基板亦經製備且暴露於85%相對濕度之環境達30天。下表III中報告比較實例1至3之組成。在暴露於含水蒸氣之環境前及後,量測維氏凹痕開裂閾值,且在暴露後藉由SIMS量測含氫層之深度。基於量測之值計算氫擴散性。
A glass base substrate comprising the compositions of Comparative Examples 1 to 3 and having a thickness of 1 mm was also prepared and exposed to an environment of 85% relative humidity for 30 days. The composition of Comparative Examples 1 to 3 is reported in Table III below. The Vickers dent cracking threshold was measured before and after exposure to an aqueous vapor environment, and the depth of the hydrogen containing layer was measured by SIMS after exposure. Hydrogen diffusion is calculated based on the measured value.

如表III中展示,實例1之玻璃組合物展現為比較實例3之玻璃組合物兩個數量級高的一氫擴散性,比較實例3亦包括鉀,但不包括磷。此等結果指示玻璃組合物中的磷之存在顯示增大氫擴散性。類似地,比較實例3之玻璃組合物展現為分別包括鋰及鈉之比較實例1及2之兩個數量級高的一氫擴散性。含鉀玻璃組合物與含鋰及鈉玻璃組合物之間的氫擴散性之差異指示具有較大離子半徑之鹼離子允許較快之氫擴散性。As shown in Table III, the glass composition of Example 1 exhibited two orders of magnitude higher hydrogen diffusion for the glass composition of Comparative Example 3, and Comparative Example 3 also included potassium, but did not include phosphorus. These results indicate that the presence of phosphorus in the glass composition shows an increase in hydrogen diffusivity. Similarly, the glass composition of Comparative Example 3 exhibited a hydrogen diffusion of two orders of magnitude higher than Comparative Examples 1 and 2, respectively, including lithium and sodium. The difference in hydrogen diffusivity between the potassium-containing glass composition and the lithium-containing and soda glass compositions indicates that alkali ions having a larger ionic radius allow for faster hydrogen diffusivity.

包括實例6之玻璃組合物的玻璃基底基板經生產,具有0.5 mm及1.0 mm之厚度。將玻璃基底基板暴露於200℃之溫度下之100%相對濕度環境達7天之週期以生產本文中描述的類型之玻璃基底物件。該等玻璃基底物件展現自表面延伸至一壓縮深度之一壓縮應力區域。針對0.5 mm玻璃基底物件量測之最大壓縮應力為124 Mpa,且針對1.0 mm玻璃基底物件量測之最大壓縮應力為137 Mpa。針對0.5 mm玻璃基底物件量測之最大中央拉伸為32 Mpa,且針對1.0 mm玻璃基底物件量測之最大壓縮應力為15 Mpa。0.5 mm玻璃基底物件之壓縮深度為101 μm,且1.0 mm玻璃基底物件之壓縮深度為99 μm。A glass base substrate comprising the glass composition of Example 6 was produced having a thickness of 0.5 mm and 1.0 mm. The glass substrate was exposed to a 100% relative humidity environment at a temperature of 200 ° C for a period of 7 days to produce a glass substrate article of the type described herein. The glass substrate articles exhibit a region of compressive stress extending from the surface to a compression depth. The maximum compressive stress measured for a 0.5 mm glass substrate object is 124 Mpa, and the maximum compressive stress measured for a 1.0 mm glass substrate object is 137 Mpa. The maximum central stretch for a 0.5 mm glass substrate is 32 Mpa and the maximum compressive stress for a 1.0 mm glass substrate is 15 Mpa. The 0.5 mm glass substrate has a compression depth of 101 μm and a 1.0 mm glass substrate with a compression depth of 99 μm.

在暴露於200℃下之100%相對濕度環境達7天後,亦自由包括實例6之玻璃組合物之玻璃基底基板形成的0.5 mm及1.0 mm厚玻璃基底物件之中心切割樣本。接著將樣本拋光至0.5 mm之一寬度,且經受傅立葉變換紅外光譜學(Fourier-transform infrared spectroscopy; FTIR)分析。藉由以下條件執行FTIR分析:CaF/InSb,64次掃描,16 cm-1 解析度,10 μm光圈及10 μm階。掃描起源於樣本之表面,且繼續至厚度之大致中點。相對於「乾」矽石產生光譜,且使用3900 cm-1 max及3550 cm-1 min參數計算羥基(βOH)濃度。歸因於玻璃基底物件之多組分本質,不可能區分受束縛羥基與分子羥基,因此曲線報告總羥基含量之濃度。0.5 mm厚及1.0 mm厚樣本的量測之羥基濃度分別展示於第9圖及第10圖中。如第9圖及第10圖中所展示,量測之羥基含量變得實質上恆定且等效於在物件之中心處的羥基含量(指示前驅體玻璃基底物件之背景羥基含量)之樣本內的濃度大致為200 μm,如藉由FTIR量測。在第9圖及第10圖中的內埋羥基濃度峰值之出現為量測方法之假像。A centrally cut sample of 0.5 mm and 1.0 mm thick glass substrate articles formed from a glass substrate comprising the glass composition of Example 6 was also exposed after exposure to a 100% relative humidity environment at 200 °C for 7 days. The sample was then polished to a width of 0.5 mm and subjected to Fourier-transform infrared spectroscopy (FTIR) analysis. FTIR analysis was performed by the following conditions: CaF/InSb, 64 scans, 16 cm -1 resolution, 10 μm aperture and 10 μm steps. The scan originates from the surface of the sample and continues to approximately the midpoint of the thickness. The spectra were generated relative to the "dry" vermiculite, and the hydroxyl (βOH) concentration was calculated using the 3900 cm -1 max and 3550 cm -1 min parameters. Due to the multi-component nature of the glass substrate article, it is not possible to distinguish between the bound hydroxyl group and the molecular hydroxyl group, so the curve reports the concentration of the total hydroxyl content. The hydroxyl concentration of the 0.5 mm thick and 1.0 mm thick samples is shown in Figures 9 and 10, respectively. As shown in Figures 9 and 10, the measured hydroxyl content becomes substantially constant and is equivalent to the hydroxyl content at the center of the article (indicating the background hydroxyl content of the precursor glass substrate article). The concentration is approximately 200 μm as measured by FTIR. The appearance of the peak value of the buried hydroxyl concentration in Figs. 9 and 10 is an artifact of the measurement method.

製備具有實例1之組成的方形樣本,具有1 mm及50 mm邊之厚度。接著在200℃下之100%相對濕度環境中處理此等樣本中之五個,達121小時。接著藉由FSM量測經處理樣本之所得壓縮應力(compressive stress; CS)及壓縮深度(depth of compression; DOC),從而得出167 MPa之CS及73 μm之DOC。使5個經蒸汽處理之樣本及未暴露於蒸汽處理之3個對照樣本經受研磨環對環(abraded ring-on-ring; AROR)測試。在表IV中報告每一測試之樣本的強度及峰值負載。如在表IV中所展示,與未處理之對照樣本比較,經蒸汽處理之樣本展現大大增加之峰值負載及強度。
A square sample having the composition of Example 1 was prepared with a thickness of 1 mm and 50 mm sides. Five of these samples were then processed in a 100% relative humidity environment at 200 °C for 121 hours. Then, the resulting compressive stress (CS) and depth of compression (DOC) of the treated sample were measured by FSM to obtain CS of 167 MPa and DOC of 73 μm. Five steam treated samples and three control samples not exposed to steam treatment were subjected to an abraded ring-on-ring (AROR) test. The intensity and peak load of each test sample are reported in Table IV. As shown in Table IV, the steam treated samples exhibited greatly increased peak load and strength compared to untreated control samples.

AROR測試為用於測試平玻璃試樣之表面強度量測,且題為「Standard Test Method for Monotonic Equibiaxial Flexural Strength of Advanced Ceramics at Ambient Temperature」之ASTM C1499-09(2013)充當用於本文中利用之AROR測試方法之基礎。ASTM C1499-09之內容被以引用之方式全部併入本文中。使用在題為「Standard Test Methods for Strength of Glass by Flexure (Determination of Modulus of Rupture)」之ASTM C158-02(2012)的題為「abrasion Procedures」之附錄2中描述之方法及裝置,用傳遞至玻璃樣本之90個粗砂碳化矽(SiC)粒子在環對環測試前研磨玻璃試樣。ASTM C158-02之內容及附錄2之內容特別被以引用之方式全部併入本文中。The AROR test is used to test the surface strength measurement of flat glass samples, and ASTM C1499-09 (2013) entitled "Standard Test Method for Monotonic Equibiaxial Flexural Strength of Advanced Ceramics at Ambient Temperature" serves as a use herein. The basis of the AROR test method. The contents of ASTM C1499-09 are hereby incorporated by reference in their entirety. Use the method and apparatus described in Appendix 2 entitled "abrasion Procedures" in ASTM C158-02 (2012) entitled "Standard Test Methods for Strength of Glass by Flexure (Determination of Modulus of Rupture)" The 90 coarse sand cerium carbide (SiC) particles of the glass sample were ground to the glass sample prior to the ring-to-loop test. The contents of ASTM C158-02 and the contents of Appendix 2 are specifically incorporated herein by reference.

在環對環測試前,如在ASTM C158-02,附錄2中所描述來研磨玻璃基底物件樣本之表面,以使用在ASTM C158-02之第A2.1圖中展示之裝置來正規化及/或控制樣本之表面缺陷狀況。在5 psi之空氣壓力下,將研磨材料噴砂至玻璃基底物件之表面上。在建立了空氣流後,將1 cm3 之研磨材料傾倒至爐內且將樣本噴砂。Prior to the ring-to-loop test, the surface of the glass substrate article sample is ground as described in ASTM C158-02, Appendix 2, to be normalized using the device shown in Figure A2.1 of ASTM C158-02. Or control the surface defect condition of the sample. The abrasive material was blasted onto the surface of the glass substrate article under an air pressure of 5 psi. After the air flow was established, 1 cm 3 of the abrasive material was poured into the furnace and the sample was sandblasted.

對於AROR測試,將如第11圖中展示的具有至少一個研磨表面之玻璃基底物件置放於不同大小之兩個同心環之間以判定等雙軸撓曲強度(亦即,當經受兩個同心環之間的撓曲時材料能夠支撐之最大應力)。在AROR組態400中,研磨玻璃基底物件410由具有一直徑D2之一支撐環420支撐。藉由具有一直徑D1之一裝載環430,力F由測力計(未展示)施加至玻璃基底物件之表面。For the AROR test, a glass substrate article having at least one abrasive surface as shown in FIG. 11 is placed between two concentric rings of different sizes to determine the isoaxial flexural strength (ie, when subjected to two concentricities) The maximum stress that the material can support when flexing between the rings). In the AROR configuration 400, the ground glass substrate article 410 is supported by a support ring 420 having a diameter D2. By loading the ring 430 with one of the diameters D1, the force F is applied to the surface of the glass substrate article by a dynamometer (not shown).

裝載環與支撐環之直徑比D1/D2可在自0.2至0.5之一範圍中。在一些實施例中,D1/D2為0.5。裝載環430及支撐環420應同心對準至支撐環直徑D2之0.5%內。在選定範圍內之任一負載下,用於測試之測力計應準確至±1%內。在23±2℃之一溫度及40±10%之一相對濕度下進行測試。The diameter ratio D1/D2 of the loading ring to the support ring may range from 0.2 to 0.5. In some embodiments, D1/D2 is 0.5. The loading ring 430 and the support ring 420 should be concentrically aligned within 0.5% of the diameter D2 of the support ring. The dynamometer used for testing should be accurate to within ±1% at any load within the selected range. The test was carried out at a temperature of 23 ± 2 ° C and a relative humidity of 40 ± 10%.

對於夾具設計,裝載環430之突出表面之半徑r在h/2 ≤ r ≤ 3h/2之一範圍中,其中h為玻璃基底物件410之厚度。裝載環430及支撐環420由具有硬度HRc > 40之加硬鋼製成。AROR夾具可市售。For the fixture design, the radius r of the protruding surface of the loading ring 430 is in the range of h/2 ≤ r ≤ 3h/2, where h is the thickness of the glass substrate article 410. The loading ring 430 and the support ring 420 are made of hardened steel having a hardness of HRc > 40. AROR fixtures are commercially available.

針對AROR測試的意欲之故障機制為,觀測源自裝載環430內之表面430a的玻璃基底物件410之斷裂。資料分析時忽略發生於此區域之外(亦即,在裝載環430與支撐環420之間)的故障。然而,歸因於玻璃基底物件410之薄度及高強度,有時觀測到超過試樣厚度h之大偏轉。因此,觀測到源自裝載環430下的高百分比之故障並非不常見。在不知曉在環內部及下之應力發展(經由應變儀分析收集)及每一試樣中的故障之源之情況下,不能準確地計算應力。作為量測之回應,AROR測試因此聚焦於在故障處之峰值負載。The intended failure mechanism for the AROR test is to observe the breakage of the glass substrate article 410 originating from the surface 430a within the loading ring 430. Failures outside the region (i.e., between the load ring 430 and the support ring 420) are ignored in the data analysis. However, due to the thinness and high strength of the glass substrate article 410, a large deflection exceeding the thickness h of the sample is sometimes observed. Therefore, it is not uncommon to observe that a high percentage of faults originating from the load ring 430. The stress cannot be accurately calculated without knowing the stress development inside and below the ring (collected via strain gauge analysis) and the source of the fault in each sample. In response to the measurement, the AROR test therefore focuses on the peak load at the fault.

雖然已為了說明之目的而闡述典型實施例,但前述描述不應被視為對本揭示內容或隨附申請專利範圍之範圍的一限制。因此,在不脫離本揭示內容或隨附申請專利範圍之精神及範疇之情況下,熟習此項技術者可想到各種修改、改編及替代。Although the exemplary embodiments have been described for purposes of illustration, the foregoing description should not be construed as limiting the scope of the disclosure or the scope of the appended claims. Accordingly, various modifications, adaptations and substitutions are conceivable to those skilled in the art without departing from the spirit and scope of the disclosure.

100‧‧‧玻璃基底物件100‧‧‧Glass base objects

110‧‧‧第一表面 110‧‧‧ first surface

112‧‧‧第二表面 112‧‧‧ second surface

120‧‧‧第一含氫層 120‧‧‧First hydrogen-containing layer

122‧‧‧第二含氫層 122‧‧‧Second hydrogen containing layer

130‧‧‧無添加氫物質區域 130‧‧‧No added hydrogen substance area

200‧‧‧消費者電子元件 200‧‧‧ Consumer Electronic Components

202‧‧‧外殼 202‧‧‧Shell

204‧‧‧前部 204‧‧‧ front

206‧‧‧後部 206‧‧‧ Rear

208‧‧‧側表面 208‧‧‧ side surface

210‧‧‧顯示器 210‧‧‧ display

212‧‧‧蓋基板 212‧‧‧Cover substrate

301‧‧‧原樣玻璃基底基板氫濃度曲線 301‧‧‧The original hydrogen concentration curve of the glass substrate

302‧‧‧玻璃基底物件氫濃度曲線 302‧‧‧Glass base material hydrogen concentration curve

303‧‧‧外推之曲線 303‧‧‧Extrapolation curve

400‧‧‧AROR組態 400‧‧‧AROR configuration

410‧‧‧研磨玻璃基底物件 410‧‧‧Grinding glass substrate

420‧‧‧支撐環 420‧‧‧Support ring

430‧‧‧裝載環 430‧‧‧Loading ring

430a‧‧‧表面 430a‧‧‧ surface

d1‧‧‧深度 D1‧‧ depth

d2‧‧‧深度 D2‧‧ depth

t‧‧‧厚度 T‧‧‧thickness

D1‧‧‧裝載環直徑 D1‧‧‧ loading ring diameter

D2‧‧‧支撐環直徑 D2‧‧‧ support ring diameter

F‧‧‧力 F‧‧‧ force

第1圖為根據一實施例的一玻璃基底物件之橫截面之表示。Figure 1 is a representation of a cross section of a glass substrate article in accordance with an embodiment.

第2A圖為併有本文中揭示之玻璃基底物件中之任何者的一例示性電子元件之平面圖。2A is a plan view of an exemplary electronic component of any of the glass substrate articles disclosed herein.

第2B圖為第2A圖之例示性電子元件之透視圖。Figure 2B is a perspective view of an exemplary electronic component of Figure 2A.

第3圖為對於自具有實例1之組成之一玻璃基底基板形成的一玻璃基底物件藉由SIMS產生的氫濃度作為在表面下方之深度之一函數之量測。Figure 3 is a measurement of the concentration of hydrogen produced by SIMS on a glass substrate formed from a glass substrate having the composition of Example 1 as a function of depth below the surface.

第4圖為在暴露於含水環境前在具有實例1之組成之一玻璃基底基板中在5 kgf下之一維氏凹痕之照片。Figure 4 is a photograph of a Vickers indentation at 5 kgf in a glass substrate having the composition of Example 1 prior to exposure to an aqueous environment.

第5圖為在暴露於含水環境前在具有實例1之組成之一玻璃基底基板中在10 kgf下之一維氏凹痕之照片。Figure 5 is a photograph of a Vickers indentation at 10 kgf in a glass substrate having the composition of Example 1 prior to exposure to an aqueous environment.

第6圖為藉由使具有實例1之組成之一玻璃基底基板暴露於含水環境形成的一玻璃基底物件中在5 kgf下之一維氏凹痕之照片。Figure 6 is a photograph of a Vickers indentation at 5 kgf in a glass substrate article formed by exposing one of the glass substrate substrates having the composition of Example 1 to an aqueous environment.

第7圖為藉由使具有實例1之組成之一玻璃基底基板暴露於含水環境形成的一玻璃基底物件中在10 kgf下之一維氏凹痕之照片。Figure 7 is a photograph of a Vickers indentation at 10 kgf in a glass substrate article formed by exposing one of the glass substrate substrates having the composition of Example 1 to an aqueous environment.

第8圖為藉由使具有實例1之組成之一玻璃基底基板暴露於含水環境形成的一玻璃基底物件中在20 kgf下之一維氏凹痕之照片。Figure 8 is a photograph of a Vickers indentation at 20 kgf in a glass substrate article formed by exposing one of the glass substrate substrates having the composition of Example 1 to an aqueous environment.

第9圖為根據一實施例的在暴露於含水環境後0.5 mm厚玻璃物件之羥基(BOH)濃度作為距表面之深度之一函數之曲線圖。Figure 9 is a graph of hydroxyl (BOH) concentration of a 0.5 mm thick glass article as a function of depth from the surface after exposure to an aqueous environment, in accordance with an embodiment.

第10圖為根據一實施例的在暴露於含水環境後1.0 mm厚玻璃物件之羥基(BOH)濃度作為距表面之深度之一函數之曲線圖。Figure 10 is a graph of hydroxyl (BOH) concentration of a 1.0 mm thick glass article as a function of depth from the surface after exposure to an aqueous environment, in accordance with an embodiment.

第11圖為環對環測試裝置之側視圖。Figure 11 is a side view of the ring-to-loop test device.

國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
Domestic deposit information (please note in the order of the depository, date, number)
no

國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
Foreign deposit information (please note in the order of country, organization, date, number)
no

Claims (10)

一種玻璃基底物件,包含: SiO2 、Al2 O3 及P2 O5 ;及一含氫層,其自該玻璃基底物件之一表面延伸至一層深度,其中:該含氫層之一氫濃度自一最大氫濃度至該層深度降低;且該層深度大於5 μm。A glass substrate article comprising: SiO 2 , Al 2 O 3 and P 2 O 5 ; and a hydrogen-containing layer extending from a surface of the glass substrate to a depth, wherein: a hydrogen concentration of the hydrogen-containing layer The depth decreases from a maximum hydrogen concentration to the depth of the layer; and the depth of the layer is greater than 5 μm. 如請求項1所述之玻璃基底物件,其中該玻璃基底物件特性在於以下中之至少一者: 至少1 kgf之一維氏開裂初始閾值,或該層深度為至少約10 μm。The glass substrate article of claim 1, wherein the glass substrate article is characterized by at least one of the following: An initial threshold of at least 1 kgf of Vickers cracking, or a depth of the layer of at least about 10 μm. 如請求項1或2所述之玻璃基底物件,其中該玻璃基底物件之中心包含下列組成中之至少一者: I. 大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O,或II. 大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於11莫耳%至小於或等於25莫耳%之K2 O。The glass substrate article of claim 1 or 2, wherein the center of the glass substrate article comprises at least one of the following composition: I. greater than or equal to 45 mol% to less than or equal to 75 mol% of SiO 2 ; Greater than or equal to 3 mol% to less than or equal to 20 mol% of Al 2 O 3 ; greater than or equal to 6 mol % to less than or equal to 15 mol % of P 2 O 5 ; and greater than or equal to 6 mol % to less than or equal to 25 mole% of K 2 O, II or greater than or equal to 45 mole% to less than or equal to 75 mole% of SiO 2;. greater than or equal to 3 mole% to less than or equal to 20 mole% Al 2 O 3 ; greater than or equal to 4 mol% to less than or equal to 15 mol% of P 2 O 5 ; and greater than or equal to 11 mol % to less than or equal to 25 mol % of K 2 O. 如請求項1或2所述之玻璃基底物件,其中該玻璃基底物件實質上無鋰及鈉中之至少一者。The glass substrate article of claim 1 or 2, wherein the glass substrate article is substantially free of at least one of lithium and sodium. 如請求項1或2所述之玻璃基底物件,進一步包含自該玻璃基底物件之一表面延伸至該玻璃基底物件內至一壓縮深度的一壓縮應力層,其中該壓縮應力層包含大於或等於100 Mpa之一壓縮應力,且該壓縮深度大於或等於75 μm。The glass substrate article of claim 1 or 2, further comprising a compressive stress layer extending from a surface of the glass substrate member to the glass substrate member to a compression depth, wherein the compressive stress layer comprises greater than or equal to 100 One of the Mpa compresses the stress, and the compression depth is greater than or equal to 75 μm. 一種消費者電子產品,包含: 一外殼,其包含一前表面、一後表面及側表面;至少部分在該外殼內之電組件,該等電組件包含至少一控制器、一記憶體及一顯示器,該顯示器處於或鄰近該外殼之該前表面;及一蓋基板,其安置於該顯示器上,其中該外殼或該蓋基板中之至少一者之至少一部分包含如請求項1或2所述之玻璃基底物件。A consumer electronics product that includes: An outer casing comprising a front surface, a rear surface and a side surface; an electrical component at least partially within the outer casing, the electrical component comprising at least one controller, a memory and a display, the display being at or adjacent to the outer casing The front surface; and a cover substrate disposed on the display, wherein at least a portion of the at least one of the outer casing or the cover substrate comprises the glass substrate article of claim 1 or 2. 一種玻璃,包含: 大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ;大於或等於6莫耳%至小於或等於15莫耳%之P2 O5 ;及大於或等於6莫耳%至小於或等於25莫耳%之K2 O。A glass comprising: SiO 2 greater than or equal to 45 mol% to less than or equal to 75 mol%; greater than or equal to 3 mol% to less than or equal to 20 mol% of Al 2 O 3 ; greater than or equal to 6 mo Ear % to less than or equal to 15 mole % P 2 O 5 ; and greater than or equal to 6 mole % to less than or equal to 25 mole % K 2 O. 一種玻璃,包含: 大於或等於45莫耳%至小於或等於75莫耳%之SiO2 ;大於或等於3莫耳%至小於或等於20莫耳%之Al2 O3 ; 大於或等於4莫耳%至小於或等於15莫耳%之P2 O5 ;及 大於或等於11莫耳%至小於或等於25莫耳%之K2 O。A glass comprising: SiO 2 greater than or equal to 45 mol% to less than or equal to 75 mol%; greater than or equal to 3 mol% to less than or equal to 20 mol% of Al 2 O 3 ; greater than or equal to 4 mo Ear % to less than or equal to 15 mole % P 2 O 5 ; and greater than or equal to 11 mole % to less than or equal to 25 mole % K 2 O. 如請求項7或8所述之玻璃,其中該玻璃特性在於以下中之至少一者: 實質上無鋰及鈉中之至少一者,或大於或等於5 kgf之一維氏開裂初始閾值。The glass of claim 7 or 8, wherein the glass is characterized by at least one of the following: There is substantially no one of lithium and sodium, or one of greater than or equal to 5 kgf of the initial threshold of Vickers cracking. 一種方法,包含以下步驟: 將一玻璃基底基板暴露於具有大於或等於75%之一相對濕度的一環境以形成具有一含氫層之一玻璃基底物件,該含氫層自該玻璃基底物件之一表面延伸至一層深度,其中:該玻璃基底基板包含SiO2 、Al2 O3 及P2 O5 ;該含氫層之一氫濃度自一最大氫濃度至該層深度降低;且該層深度大於或等於5 μm。A method comprising the steps of: exposing a glass substrate to an environment having a relative humidity of greater than or equal to 75% to form a glass substrate article having a hydrogen containing layer from the glass substrate a surface extending to a depth, wherein: the glass base substrate comprises SiO 2 , Al 2 O 3 and P 2 O 5 ; a hydrogen concentration of the hydrogen-containing layer decreases from a maximum hydrogen concentration to a depth of the layer; and the layer depth Greater than or equal to 5 μm.
TW107140818A 2017-11-17 2018-11-16 Hydrogen-containing glass-based articles with high indentation cracking threshold TWI806928B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762587872P 2017-11-17 2017-11-17
US62/587,872 2017-11-17
NL2020896A NL2020896B1 (en) 2018-05-08 2018-05-08 Water-containing glass-based articles with high indentation cracking threshold
??2020896 2018-05-08
NL2020896 2018-05-08

Publications (2)

Publication Number Publication Date
TW201930219A true TW201930219A (en) 2019-08-01
TWI806928B TWI806928B (en) 2023-07-01

Family

ID=65019555

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107140818A TWI806928B (en) 2017-11-17 2018-11-16 Hydrogen-containing glass-based articles with high indentation cracking threshold

Country Status (2)

Country Link
TW (1) TWI806928B (en)
WO (1) WO2019099814A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2020896B1 (en) 2018-05-08 2019-11-14 Corning Inc Water-containing glass-based articles with high indentation cracking threshold
WO2020102147A2 (en) * 2018-11-16 2020-05-22 Corning Incorporated Laminated glass articles comprising a hydrogen-containing glass core layer and methods of forming the same
TW202026257A (en) 2018-11-16 2020-07-16 美商康寧公司 Glass compositions and methods for strengthening via steam treatment
TW202026261A (en) * 2018-11-16 2020-07-16 美商康寧公司 Water vapor strengthenable alkali-free glass compositions
EP3969424A1 (en) 2019-05-16 2022-03-23 Corning Incorporated Glass compositions and methods with steam treatment haze resistance
WO2020231959A1 (en) * 2019-05-16 2020-11-19 Corning Incorporated Glasses with modified young's modulus profile
GB202012825D0 (en) * 2020-05-12 2020-09-30 Corning Inc Fusion formable and steam strengthenable glass compositions with platinum compatibility

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053679A (en) * 1975-08-15 1977-10-11 Ppg Industries, Inc. Chemically strengthened opal glass
JP5743125B2 (en) * 2007-09-27 2015-07-01 日本電気硝子株式会社 Tempered glass and tempered glass substrate
US20120277085A1 (en) * 2011-04-28 2012-11-01 Dana Craig Bookbinder Methods for enhancing strength and durability of a glass article

Also Published As

Publication number Publication date
TWI806928B (en) 2023-07-01
WO2019099814A1 (en) 2019-05-23

Similar Documents

Publication Publication Date Title
TWI806928B (en) Hydrogen-containing glass-based articles with high indentation cracking threshold
KR102659884B1 (en) Hydrogen-containing glass-based products with high indentation cracking thresholds
TWI679183B (en) Strengthened glass with deep depth of compression
TWI620727B (en) Chemically strengthened glass
TW202019851A (en) Glass-based articles with improved fracture resistance
US20170273201A1 (en) Methods for preparing strengthened lithium-based glass articles and lithium-based glass articles
TW201808852A (en) Thin glass based article with high resistance to contact damage
JPWO2018199045A1 (en) Chemically tempered glass
JP2020200238A (en) Flexible and/or foldable articles and method of providing flexible and/or foldable articles
WO2014167910A1 (en) Chemically strengthened glass plate
TWI733903B (en) Glass-based articles with engineered stress profiles and methods of manufacture
KR20240103067A (en) Hydrogen-containing glass-based articles with high indentation cracking threshold
WO2020231963A1 (en) Steam strengthenable glass compositions with low phosphorous content
US20220204386A1 (en) Glasses with modified young&#39;s modulus profile
TW202026261A (en) Water vapor strengthenable alkali-free glass compositions