TW201928094A - Method, evaporation source for forming a ceramic layer of a component of an electrochemical energy storage device and process chamber - Google Patents

Method, evaporation source for forming a ceramic layer of a component of an electrochemical energy storage device and process chamber Download PDF

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TW201928094A
TW201928094A TW107132395A TW107132395A TW201928094A TW 201928094 A TW201928094 A TW 201928094A TW 107132395 A TW107132395 A TW 107132395A TW 107132395 A TW107132395 A TW 107132395A TW 201928094 A TW201928094 A TW 201928094A
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gas
ceramic layer
processing gas
processing
evaporation source
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TWI702301B (en
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羅藍 崔實
投斯登布魯諾 戴德
蘇布拉曼雅 赫爾勒
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美商應用材料股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • HELECTRICITY
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    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/0026Activation or excitation of reactive gases outside the coating chamber
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/543Controlling the film thickness or evaporation rate using measurement on the vapor source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/04Processes of manufacture in general
    • H01M4/0402Methods of deposition of the material
    • H01M4/0421Methods of deposition of the material involving vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/04Processes of manufacture in general
    • H01M4/0402Methods of deposition of the material
    • H01M4/0421Methods of deposition of the material involving vapour deposition
    • H01M4/0423Physical vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/13Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139Processes of manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/40Separators; Membranes; Diaphragms; Spacing elements inside cells
    • H01M50/409Separators, membranes or diaphragms characterised by the material
    • H01M50/431Inorganic material
    • H01M50/434Ceramics
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Abstract

An evaporation source (102) for forming a ceramic layer of a component of an electrochemical energy storage device is provided. The evaporation source (102) includes a material source (140) configured to evaporate a material, and a gas supply having a first gas outlet (107a) configured to supply a first process gas and a second gas outlet (107b) configured to supply a second process gas, the first process gas including oxygen and the second process gas including hydrogen, the ceramic layer (52) being formed by at least the evaporated material, the first process gas and the second process gas.

Description

用以形成一電化學能儲存裝置之一元件的一陶瓷層的方法、蒸發源以及處理腔室Method for forming a ceramic layer of an element of an electrochemical energy storage device, evaporation source and processing chamber

本揭露之數個實施例是有關於數種用以形成一電化學能儲存裝置之一元件之一陶瓷層的方法、蒸發源及處理腔室。本揭露之數個實施例特別是有關於一種用以形成一鋰電池或鋰離子(Li-ion)電池之一陰極、陽極、電解質或隔離件(separator)。The embodiments of the present disclosure are related to several methods, an evaporation source, and a processing chamber for forming a ceramic layer of an element of an electrochemical energy storage device. The embodiments of the present disclosure are particularly related to a cathode, an anode, an electrolyte, or a separator for forming a lithium battery or a lithium ion (Li-ion) battery.

電隔離件可舉例為說明成使用在電池及其他配置中的隔離件。在電池及其他配置中,數個電極係在維持離子導電性時彼此分離。Electrical separators can be exemplified as separators used in batteries and other configurations. In batteries and other configurations, several electrodes are separated from each other while maintaining ionic conductivity.

一般來說,隔離件包括薄、多孔、電絕緣物質,相對於使用在系統中之化學物質及溶劑係具有高離子多孔性、良好的機械強度及長期穩定性。使用在此系統中之化學物質及溶劑舉例為在電池之電解質中。在電池中,隔離件通常完全地電性絕緣陰極及陽極。此外,隔離件通常永久具有彈性及遵循系統中之運動,而不只是阻止來自外部的負載且亦在離子引入及排出時阻止電極的「呼吸(breathing)」。Generally speaking, the separator includes thin, porous, and electrically insulating materials. Compared with the chemicals and solvents used in the system, it has high ionic porosity, good mechanical strength, and long-term stability. The chemicals and solvents used in this system are exemplified in the electrolyte of a battery. In batteries, the separator is usually completely electrically insulating the cathode and anode. In addition, the separator is usually permanently resilient and follows the movement in the system, not only blocking loads from the outside, but also preventing "breathing" of the electrodes during ion introduction and discharge.

一般來說,隔離件係與決定使用隔離件之系統的壽命及安全性相關。舉例來說,可交換電池的發展係受到適當之隔離件材料之發展很大的影響。In general, the spacer is related to the life and safety of the system that determines the use of the spacer. For example, the development of interchangeable batteries has been greatly influenced by the development of appropriate separator materials.

特別是,用於使用在高能量電池或高表現電池中之隔離件可非常薄以確保低的特定空間條件及以最小化內電阻,可具有高多孔性以確保低內電阻,及輕量以達到電池系統之低特定重量。In particular, the separator used in high-energy batteries or high-performance batteries can be very thin to ensure low specific space conditions and to minimize internal resistance, and can have high porosity to ensure low internal resistance, and light weight to Achieve low specific weight of battery system.

隔離件一般包括陶瓷層,陶瓷層對電池之離子來說為多孔的。對於鋰電池的情況來說,陶瓷層對鋰離子(lithium ions,Li-ions)可為多孔的。然而,陶瓷層可能並非全為多孔的。舉例來說,陶瓷層可包括金屬原子,並非完全地束縛(bound)及可能在鋰離子電池之充電/放電期間與鋰離子反應。因此,電池表現可能惡化。The separator generally includes a ceramic layer, which is porous to the ions of the battery. In the case of a lithium battery, the ceramic layer may be porous to lithium ions (Li-ions). However, the ceramic layer may not be all porous. For example, the ceramic layer may include metal atoms, is not completely bound and may react with lithium ions during the charge / discharge of the lithium ion battery. As a result, battery performance may deteriorate.

有鑑於上述,此處所述之數個實施例係著重於提供數種用以形成一電化學能儲存裝置之數個元件的方法及系統,而可克服本領域中至少一些問題。本揭露著重於提供數種用以形成一電化學能儲存裝置之數個元件的方法及系統,而可增加電化學能儲存裝置之電荷遷移(放電/充電率)電壓及壽命。In view of the above, the embodiments described herein focus on providing methods and systems for forming several elements of an electrochemical energy storage device, which can overcome at least some problems in the art. This disclosure focuses on providing several methods and systems for forming several elements of an electrochemical energy storage device, which can increase the charge transfer (discharge / charge rate) voltage and life of the electrochemical energy storage device.

有鑑於上述,提出用以形成一電化學能儲存裝置之數個元件的一種方法、一種蒸發源及一種處理腔室。本應用之其他方面、優點、及特徵係透過附屬申請專利範圍、說明、及所附的圖式更為清楚。In view of the above, a method, an evaporation source, and a processing chamber for forming several elements of an electrochemical energy storage device are proposed. Other aspects, advantages, and features of this application are made clearer through the scope, description, and accompanying drawings of the attached patent application.

根據本揭露之一方面,提出一種用以形成一電化學能儲存裝置之一元件之一陶瓷層的方法。此方法包括蒸發一材料於一軟質基材上;提供一第一處理氣體;以及提供一第二處理氣體,第二處理氣體包括氫,陶瓷層藉由至少蒸發之材料、第一處理氣體及第二處理氣體形成。According to one aspect of the present disclosure, a method for forming a ceramic layer of an element of an electrochemical energy storage device is provided. The method includes evaporating a material on a soft substrate; providing a first processing gas; and providing a second processing gas, the second processing gas including hydrogen, and the ceramic layer includes at least the evaporated material, the first processing gas, and the first Two process gases are formed.

根據本揭露之一方面,提出一種用以形成一電化學能儲存裝置之一元件的一陶瓷層之蒸發源。此蒸發源包括一材料源,裝配以蒸發一材料;以及一氣體供應器,具有一第一氣體出口及一第二氣體出口,第一氣體出口裝配以提供一第一處理氣體,第二氣體出口裝配以提供一第二處理氣體,第二處理氣體包括氫;陶瓷層藉由至少蒸發之材料、第一處理氣體及第二處理氣體形成。According to one aspect of the present disclosure, an evaporation source for forming a ceramic layer of an element of an electrochemical energy storage device is provided. The evaporation source includes a material source assembled to evaporate a material; and a gas supplier having a first gas outlet and a second gas outlet, the first gas outlet is assembled to provide a first process gas and a second gas outlet Assembled to provide a second process gas, the second process gas includes hydrogen; the ceramic layer is formed from at least an evaporated material, the first process gas, and the second process gas.

根據本揭露之一方面,提出一種處理腔室。此處理腔室包括一蒸發源。此蒸發源包括一材料源,裝配以蒸發一材料;以及一氣體供應器,具有一第一氣體出口及一第二氣體出口,第一氣體出口裝配以提供一第一處理氣體,第二氣體出口裝配以提供一第二處理氣體,第二處理氣體包括氫;陶瓷層藉由至少蒸發之材料、第一處理氣體及第二處理氣體形成。此處理腔室更包括一基材傳送機構,裝配以傳送一軟質基材通過處理腔室。蒸發源係相對於基材傳送機構配置,使得陶瓷層係形成於軟質基材上。According to one aspect of the present disclosure, a processing chamber is proposed. The processing chamber includes an evaporation source. The evaporation source includes a material source assembled to evaporate a material; and a gas supplier having a first gas outlet and a second gas outlet, the first gas outlet is assembled to provide a first process gas and a second gas outlet Assembled to provide a second process gas, the second process gas includes hydrogen; the ceramic layer is formed from at least an evaporated material, the first process gas, and the second process gas. The processing chamber further includes a substrate transfer mechanism, which is assembled to transfer a soft substrate through the processing chamber. The evaporation source is arranged relative to the substrate transfer mechanism so that the ceramic layer is formed on the soft substrate.

數個例子係亦有關於用以執行所揭露之方法之設備,且包括用以執行所述之方法方塊之設備部件。此些方法方塊可藉由硬體元件、由合適軟體程式化之電腦、兩者之任何結合或任何其他方式執行。再者,根據本應用之數個例子係亦有關於操作所述之設備的數個方法。此些方法包括數個方法方塊,用以執行設備之功能。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:Several examples also relate to equipment used to perform the disclosed methods, and include equipment components to perform the described method blocks. These method blocks may be implemented by hardware components, a computer programmed with suitable software, any combination of the two, or any other means. Furthermore, the examples according to this application also refer to several methods for operating the described equipment. These methods include several method blocks to perform the functions of the device. In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:

詳細的參照現在將以本揭露的數種實施例達成,本揭露的數種實施例的一或多個例子係繪示於圖式中。在圖式之下方說明中,相同參考編號係意指相同的元件。特別是,有關於個別實施例之相異處係進行說明。各例子係藉由說明的方式提供且不意味為本揭露之一限制。所說明或敘述而做為一實施例之部份之特徵可用於其他實施例或與其他實施例結合,以取得再其他之實施例。可預期的是,本揭露包括此些調整及變化。Detailed reference will now be achieved with several embodiments of the present disclosure. One or more examples of the several embodiments of the present disclosure are shown in the drawings. In the description below the drawings, the same reference numerals refer to the same elements. In particular, differences between individual embodiments will be described. Examples are provided by way of illustration and are not meant to be a limitation of this disclosure. The features described or described as part of one embodiment can be used in or combined with other embodiments to obtain yet other embodiments. It is expected that this disclosure includes such adjustments and changes.

第1圖繪示用以形成電化學能儲存裝置之元件的陶瓷層52之蒸發源102的示意圖。蒸發源102可範例地配置在處理腔室100中。處理腔室100可為處理系統之部份,例如是用於真空處理系統之處理系統。FIG. 1 is a schematic diagram of an evaporation source 102 for forming a ceramic layer 52 of an element of an electrochemical energy storage device. The evaporation source 102 may be exemplarily configured in the processing chamber 100. The processing chamber 100 may be part of a processing system, such as a processing system for a vacuum processing system.

在本揭露之內文中,「電化學能儲存裝置」可理解為可為可交換或不可交換的電化學能儲存器。在此方面來說,本揭露一方面不區分名稱「蓄電池(accumulator)」,及另一方面不區分「電池(battery)」。在本揭露之內文中,名稱「電化學能儲存裝置」、「電化學裝置」及「電化電池」可在下文中同義地使用。名稱「電化學能儲存裝置」舉例為可亦包含燃料電池。在此處所述之數個實施例中,電化電池可理解為能量儲存器之基本或最低功能單元。在工業實行中,多個電化電池可通常以串聯或並聯之方式連接,以增加儲存器之整個能量容量。在本文中,可參照多個電化電池。工業設計之電池可因而具有單一個電池,或以並聯或串聯連接之多個電化電池。In the context of this disclosure, “electrochemical energy storage device” can be understood as an electrochemical energy storage that can be exchangeable or non-exchangeable. In this regard, the disclosure does not distinguish between the name "accumulator" on the one hand and "battery" on the other. In the context of this disclosure, the names "electrochemical energy storage device", "electrochemical device" and "electrochemical cell" may be used synonymously in the following. The name "electrochemical energy storage device" is exemplified as may also include a fuel cell. In the several embodiments described herein, an electrochemical cell can be understood as the basic or lowest functional unit of an energy storage. In industrial practice, multiple electrochemical cells can usually be connected in series or parallel to increase the overall energy capacity of the storage. In this context, reference may be made to multiple electrochemical cells. Industrially designed batteries can thus have a single battery, or multiple electrochemical cells connected in parallel or in series.

一般來說,舉例為作為基本功能單元之電化學能儲存裝置可包括相對極性之兩個電極,也就是負陽極及正陰極。陰極及陽極可以隔離件分隔。隔離件配置在陰極及陽極之間,以避免陰極及陽極之間短路。電池可填充有電解質。電解質可為離子導體,可為液體、膠體形式或有時為固體。隔離件可為離子可滲透(ion-pervious),及在充電或放電周期中允許陽極及陰極之間的離子交換。包括在電化學能儲存裝置中之部件可理解為電化學能儲存裝置之元件。因此,包括陰極、陽極、電解質及隔離件之上述部件之部份或各者可視為電化學能儲存裝置之元件,但不以此些元件為限。In general, an electrochemical energy storage device as an example of a basic functional unit may include two electrodes of opposite polarities, that is, a negative anode and a positive cathode. The cathode and anode can be separated by a separator. The separator is arranged between the cathode and the anode to avoid a short circuit between the cathode and the anode. The battery may be filled with an electrolyte. The electrolyte may be an ionic conductor, may be in the form of a liquid, a colloid, or sometimes a solid. The separator may be ion-pervious and allow ion exchange between the anode and cathode during a charge or discharge cycle. The components included in the electrochemical energy storage device can be understood as the elements of the electrochemical energy storage device. Therefore, a part or each of the above-mentioned components including the cathode, the anode, the electrolyte, and the separator can be regarded as components of the electrochemical energy storage device, but not limited to these components.

根據此處所述之數個實施例,蒸發源102可包括材料源140,裝配以蒸發材料。材料源140可裝配,以提供組成陶瓷層52之至少一元素。材料源140可裝配以蒸發金屬,例如是鋁。According to several embodiments described herein, the evaporation source 102 may include a material source 140 that is assembled to vaporize the material. The source of material 140 may be assembled to provide at least one element constituting the ceramic layer 52. The material source 140 may be assembled to evaporate a metal, such as aluminum.

根據此處所述之數個實施例,蒸發源102可包括氣體供應器,裝配以提供處理氣體。特別是,氣體供應器可裝配,以供應至少第一及第二處理氣體。處理氣體可為反應氣體,特別是第一處理氣體及/或第二處理氣體可為反應氣體。特別是,處理氣體特別是第一處理氣體及/或第二處理氣體,可為與材料源140所蒸發之材料反應的反應氣體。此外,第一處理氣體及/或第二處理氣體可為與第一處理氣體及第二處理氣體之另一者反應的反應氣體。第一處理氣體及第二處理氣體之反應的生成物可為第三處理氣體,第三處理氣體可為反應氣體。特別是,第三處理氣體可為與材料源140所蒸發之材料反應的反應氣體。因此,第一處理氣體、第二處理氣體及第三處理氣體之任一者可為可與材料源140所蒸發之材料反應的反應氣體。According to several embodiments described herein, the evaporation source 102 may include a gas supplier configured to provide a process gas. In particular, the gas supplier may be equipped to supply at least a first and a second process gas. The processing gas may be a reaction gas, and in particular, the first processing gas and / or the second processing gas may be a reaction gas. In particular, the processing gas, especially the first processing gas and / or the second processing gas, may be a reaction gas that reacts with the material evaporated by the material source 140. In addition, the first processing gas and / or the second processing gas may be a reaction gas that reacts with the other of the first processing gas and the second processing gas. The product of the reaction between the first processing gas and the second processing gas may be a third processing gas, and the third processing gas may be a reaction gas. In particular, the third processing gas may be a reaction gas that reacts with the material evaporated by the material source 140. Therefore, any one of the first processing gas, the second processing gas, and the third processing gas may be a reaction gas that can react with the material evaporated by the material source 140.

氣體供應器可裝配,以提供組成陶瓷層52之至少一元素。舉例來說,第一處理氣體及/或第二處理氣體可為及/或包括氧、臭氧、氬及其之組合。再者,氣體供應器可裝配,以提供組成陶瓷層52之至少兩個元素。舉例來說,第一處理氣體及/或第二處理氣體可為及/或包括氧、臭氧、氬及其之組合,及/或第一處理氣體及/或第二處理氣體之另一者可為及/或包括氫、水蒸汽、氬及其組合。第一處理氣體可不同於第二處理氣體。第一處理氣體可為第一反應氣體及/或第二處理氣體可為第二反應氣體。The gas supplier may be assembled to provide at least one element constituting the ceramic layer 52. For example, the first processing gas and / or the second processing gas may be and / or include oxygen, ozone, argon, and combinations thereof. Furthermore, the gas supplier may be assembled to provide at least two elements constituting the ceramic layer 52. For example, the first process gas and / or the second process gas may be and / or include oxygen, ozone, argon, and combinations thereof, and / or the other of the first process gas and / or the second process gas may be Is and / or includes hydrogen, water vapor, argon, and combinations thereof. The first processing gas may be different from the second processing gas. The first processing gas may be a first reaction gas and / or the second processing gas may be a second reaction gas.

當藉由蒸發形成陶瓷層52,特別是藉由反應蒸發形成陶瓷層52時,陶瓷層52可能不完全以化學計量形成,或以非化學計量形成。在本揭露之內文中,「化學計量(stoichiometry)」例如是陶瓷層52之化學計量,可理解為化學反應中之反應物和生成物之相對數量的計算。因此,「非化學計量」或「不完全化學計量」可意指為生成物不包括全部的反應物之情況。在氧化鋁作為陶瓷層52之材料的例子中,完全的化學計量反應可為4Al + 3O2 = 2Al2 O3 。如果氧化鋁沒有以完全化學計量或非化學計量形成時,反應之生成物可舉例為Al2 O2.5 。因此,具有x ≠ 1.5之AlOx 的任何組成可視為非化學計量或沒有以完全化學計量形成。在此一非化學計量的陶瓷層中,特別是在電化學能儲存裝置充電及/或放電期間,可存在可與電化學能儲存裝置之元素反應的未束縛超量原子。在鋰離子電池之例子中,例如是在鋰離子電池之充電及/或放電期間,未束縛超量原子可與通過陶瓷層之鋰離子反應。在氧化鋁作為陶瓷層52之材料的例子中,未束縛超量原子可為鋁(Al)。When the ceramic layer 52 is formed by evaporation, and in particular, the ceramic layer 52 is formed by reactive evaporation, the ceramic layer 52 may not be formed entirely stoichiometrically or non-stoichiometrically. In the context of this disclosure, "stoichiometry" is, for example, the stoichiometry of the ceramic layer 52, and can be understood as the calculation of the relative quantities of reactants and products in a chemical reaction. Therefore, "non-stoichiometric" or "incomplete stoichiometry" can mean a situation where the product does not include all reactants. Examples of alumina as the material of the ceramic layer 52, a complete stoichiometric reaction may 4Al + 3O 2 = 2Al 2 O 3. If the alumina is not formed in a fully stoichiometric or non-stoichiometric manner, the reaction product may be exemplified by Al 2 O 2.5 . Therefore, any composition of AlO x with x ≠ 1.5 may be considered non-stoichiometric or not formed at full stoichiometry. In this non-stoichiometric ceramic layer, particularly during charging and / or discharging of the electrochemical energy storage device, there may be unbound excess atoms that can react with elements of the electrochemical energy storage device. In the example of a lithium ion battery, for example, during the charging and / or discharging of a lithium ion battery, unbound excess atoms can react with lithium ions passing through the ceramic layer. In the example of alumina as the material of the ceramic layer 52, the unbound excess atom may be aluminum (Al).

根據此處所述之數個實施例,氣體供應器可具有第一氣體出口107a及/或第二氣體出口107b。第一氣體出口107a裝配以提供第一處理氣體。第二氣體出口107b裝配以提供第二處理氣體。第一處理氣體包括氧,及/或第二處理氣體包括氫。According to several embodiments described herein, the gas supplier may have a first gas outlet 107a and / or a second gas outlet 107b. The first gas outlet 107a is assembled to provide a first process gas. The second gas outlet 107b is assembled to provide a second process gas. The first process gas includes oxygen and / or the second process gas includes hydrogen.

根據此處所述之數個實施例,陶瓷層52可具有化學成份,此化學成份包括氧及氫。舉例來說,陶瓷層52可為包括氧化鋁及氫氧化鋁之層。陶瓷層52可額外地或替代地為水合氧化鋁層。舉例來說,陶瓷層可包括氧化鋁及溶解於氧化鋁中之氫。因此,取代形成可能有上述之化學計量問題的純氧化鋁層而言,本應用可提供替代的陶瓷層52,而沒有伴隨化學計量問題。因此,化學計量的陶瓷層52可形成,特別是完全的化學計量之陶瓷層52可形成。According to several embodiments described herein, the ceramic layer 52 may have a chemical composition including oxygen and hydrogen. For example, the ceramic layer 52 may be a layer including aluminum oxide and aluminum hydroxide. The ceramic layer 52 may additionally or alternatively be a layer of hydrated alumina. For example, the ceramic layer may include alumina and hydrogen dissolved in alumina. Therefore, instead of forming a pure alumina layer that may have the aforementioned stoichiometry problems, this application can provide an alternative ceramic layer 52 without accompanying stoichiometry problems. Therefore, a stoichiometric ceramic layer 52 may be formed, and in particular, a fully stoichiometric ceramic layer 52 may be formed.

在氫氧化鋁為陶瓷層52之材料或部份的材料之例子中,氫氧化鋁可形成而具有改善之化學計量,特別是完全之化學計量,使得未束縛超量Al原子之總量係減少及/或氧化鋁包括增量之Al2 O3 。特別是,不想受到理論的束縛,氫氧化物可特別是在相較於氧時視為反應材料。因此,氫氧化鋁可形成而具有改善之化學計量。因此,電化學能儲存裝置之較少元素可與陶瓷層52反應,電化學能儲存裝置之較少元素例如是上述之鋰離子。當實行數個實施例時,可取得較高之放電及/或再充電率、較高之電壓及/或改善的壽命。因此,可實際上取得改善之電荷遷移、改善之電壓及/或延長之循環壽命(cycle life)。In the case where aluminum hydroxide is the material or part of the material of the ceramic layer 52, aluminum hydroxide can be formed to have an improved stoichiometry, especially a complete stoichiometry, so that the total amount of unbound excess Al atoms is reduced. And / or alumina includes incremental Al 2 O 3 . In particular, without wishing to be bound by theory, hydroxides can be considered reactive materials, especially when compared to oxygen. Therefore, aluminum hydroxide can be formed with improved stoichiometry. Therefore, fewer elements of the electrochemical energy storage device can react with the ceramic layer 52, and less elements of the electrochemical energy storage device are, for example, the lithium ions described above. When several embodiments are implemented, higher discharge and / or recharge rates, higher voltages, and / or improved life can be achieved. As a result, improved charge migration, improved voltage, and / or extended cycle life can be achieved in practice.

再者,可減少焓之冷凝。因此,蒸發製程的溫度可減少。特別是,在陶瓷層52及/或軟質基材111經歷的溫度可減少。當增加之溫度可為有利的,以舉例為增加反應率及反應完全性時,如此處所述之將形成的元件可為或包括熱敏感的部件。當實行數個實施例時,可確保將形成之元件的熱完整性(thermal integrity)。Furthermore, the condensation of enthalpy can be reduced. Therefore, the temperature of the evaporation process can be reduced. In particular, the temperature experienced by the ceramic layer 52 and / or the soft substrate 111 can be reduced. When increasing the temperature may be advantageous, for example to increase the reaction rate and the completeness of the reaction, the elements to be formed as described herein may be or include thermally sensitive components. When implementing several embodiments, the thermal integrity of the elements to be formed can be ensured.

再者,陶瓷層52之機械強健性可改善。當實行數個實施例時,這樣的電化學能儲存裝置之元件及電化學能儲存裝置的製造、後處理及儲存可改善。特別是,陶瓷層52之改善的強健性可有助於捲及/或再捲形成於軟質基材111上的陶瓷層52。Furthermore, the mechanical robustness of the ceramic layer 52 can be improved. When implementing several embodiments, the manufacturing, post-processing, and storage of such electrochemical energy storage device components and electrochemical energy storage devices can be improved. In particular, the improved robustness of the ceramic layer 52 may help roll and / or reroll the ceramic layer 52 formed on the soft substrate 111.

因此,陶瓷層52可藉由至少已蒸發之材料、第一處理氣體及第二處理氣體形成。特別是,蒸發源102可裝配,以沈積陶瓷層52於軟質基材111之上方或軟質基材111上。特別是,軟質基材可具有第一側及/或第二側,第二側相反於第一側。陶瓷層52可沈積於軟質基材111之第一側及第二側之至少一者的上方或上。根據此處所述之數個實施例,此至少部份地離子化製程係能夠形成具有改善之化學計量的陶瓷層52。Therefore, the ceramic layer 52 may be formed of at least the evaporated material, the first processing gas, and the second processing gas. In particular, the evaporation source 102 can be assembled to deposit a ceramic layer 52 on or on the soft substrate 111. In particular, the soft substrate may have a first side and / or a second side, and the second side is opposite to the first side. The ceramic layer 52 may be deposited on or over at least one of the first side and the second side of the soft substrate 111. According to several embodiments described herein, this at least partially ionizing process is capable of forming a ceramic layer 52 with improved stoichiometry.

在本揭露之內文中,「陶瓷層」例如是陶瓷層52,可理解為包括陶瓷材料或以陶瓷材料形成之層。「陶瓷材料」可理解為無機、非金屬、包括金屬之固態材料、非金屬或主要以離子及共價鍵結合之類金屬原子。在本揭露之內容中,陶瓷材料可特別是理解為介電材料,此介電材料特別是包括金屬及氧原子,例如是舉例為氫氧化鋁、氧化鋁、氮化鋁等。根據此處所述之數個實施例,陶瓷層52可為氫氧化鋁層。In the context of the present disclosure, the “ceramic layer” is, for example, the ceramic layer 52, and can be understood to include a ceramic material or a layer formed of a ceramic material. "Ceramic materials" can be understood as inorganic, non-metal, solid materials including metals, non-metals, or metal atoms that are mainly bound by ions and covalent bonds. In the present disclosure, the ceramic material can be particularly understood as a dielectric material, and the dielectric material includes metal and oxygen atoms, for example, aluminum hydroxide, aluminum oxide, aluminum nitride, and the like. According to several embodiments described herein, the ceramic layer 52 may be an aluminum hydroxide layer.

根據此處所述之數個實施例,陶瓷材料可為至少一不導電或導電性非常差之金屬鋁、矽、鉛、鋯、鈦、鉿、鑭、鎂、鋅、錫、鈰、釔、鈣、鋇、鍶及其組合的氧化物。儘管矽時常意指為類金屬,在本揭露之內文中,無論何時述及金屬時應包括矽。根據此處所之數個實施例,藉由特別是選擇抗鹼輸入材料,電化學能儲存裝置之元件可最佳化來用於包含強鹼性電解質的電化電池。舉例來說,鋯或鈦可使用來取代鋁或矽而作為形成陶瓷層52之無機元件。在此一例子中,陶瓷層52可包括氧化鋯或氧化鈦來取代氧化鋁或氧化矽。According to several embodiments described herein, the ceramic material may be at least one non-conductive or very poorly conductive metal such as aluminum, silicon, lead, zirconium, titanium, hafnium, lanthanum, magnesium, zinc, tin, cerium, yttrium, Oxides of calcium, barium, strontium and combinations thereof. Although silicon is often referred to as a metalloid, in the context of this disclosure, silicon should be included whenever metal is mentioned. According to several embodiments described herein, the components of an electrochemical energy storage device can be optimized for use in an electrochemical cell containing a strong alkaline electrolyte by selecting, in particular, an alkali-resistant input material. For example, zirconium or titanium may be used instead of aluminum or silicon as an inorganic element forming the ceramic layer 52. In this example, the ceramic layer 52 may include zirconia or titanium oxide instead of alumina or silicon oxide.

在隔離件之例子中,軟質基材111可以微孔聚乙烯(microporous polyethylene)、聚丙烯(polypropylene)、聚烯(polyolefin)、及/或其之層疊製成,及/或包括微孔聚乙烯、聚丙烯、聚烯、及/或其之層疊。In the example of the separator, the soft substrate 111 may be made of microporous polyethylene, polypropylene, polyolefin, and / or a laminate thereof, and / or include microporous polyethylene , Polypropylene, polyolefin, and / or a stack thereof.

在陰極之情況中,軟質基材111可以鋁製成及/或包括鋁。在此情況中,陰極層可形成於軟質基材111上。陶瓷層52可形成於陰極層上。舉例來說,軟質基材111在陰極之情況中可具有5至12 µm之厚度及/或陰極層可具有達100 µm之厚度。軟質基材111可額外地或替代地為此處所述之聚合物材料或包括此處所述之聚合物材料,舉例為聚酯(polyester),鋁層沈積於軟質基材111上。聚合物基材可較薄於舉例為鋁基材及/或沈積的鋁層。沈積的鋁層可具有約0.5 µm至約1 µm的厚度。當實行數個實施例時,陰極的厚度可減少。In the case of a cathode, the soft substrate 111 may be made of and / or include aluminum. In this case, the cathode layer may be formed on the soft substrate 111. The ceramic layer 52 may be formed on the cathode layer. For example, the soft substrate 111 may have a thickness of 5 to 12 µm in the case of a cathode and / or the cathode layer may have a thickness of up to 100 µm. The soft substrate 111 may additionally or alternatively be a polymer material described herein or include a polymer material described herein, such as polyester, and an aluminum layer is deposited on the soft substrate 111. The polymer substrate may be thinner than an aluminum substrate and / or a deposited aluminum layer, for example. The deposited aluminum layer may have a thickness of about 0.5 µm to about 1 µm. When implementing several embodiments, the thickness of the cathode can be reduced.

在陽極之情況中,軟質基材111可以銅製成及/或包括銅。在此情況中,陽極層可形成於軟質基材111上。陶瓷層52可形成於陽極層上。舉例來說,軟質基材111在陽極之情況中可具有5至12 µm的厚度及/或陽極層可具有達100 µm之厚度。軟質基材111可額外地或替代地為此處所述之聚合物材料或包括如此處所述之聚合物材料,舉例為聚酯,銅層沈積於軟質基材111上。聚合物基材可較薄於舉例為銅基材及/或沈積之銅層。沈積之銅層可具有約0.5 µm至約1 µm之厚度。當實行數個實施例時,陽極之厚度可減少。In the case of an anode, the soft substrate 111 may be made of and / or include copper. In this case, an anode layer may be formed on the soft substrate 111. The ceramic layer 52 may be formed on the anode layer. For example, the soft substrate 111 may have a thickness of 5 to 12 µm in the case of an anode and / or the anode layer may have a thickness of up to 100 µm. The flexible substrate 111 may additionally or alternatively be a polymer material as described herein or include a polymer material as described herein, such as polyester, and a copper layer is deposited on the flexible substrate 111. The polymer substrate may be thinner than a copper substrate and / or a deposited copper layer, for example. The deposited copper layer may have a thickness of about 0.5 µm to about 1 µm. When implementing several embodiments, the thickness of the anode can be reduced.

根據此處所述之數個實施例,陶瓷層52可為多孔層或具有多孔性。特別是,陶瓷層52可為多孔的,使得某種元素可通過陶瓷層52。According to several embodiments described herein, the ceramic layer 52 may be a porous layer or have a porosity. In particular, the ceramic layer 52 may be porous so that a certain element can pass through the ceramic layer 52.

軟質基材111可特別是包含軟質基材,例如是塑膠膜、網格(web)、箔、可彎曲玻璃或條狀物(strip)。名稱軟質基材可亦包含其他形式之軟質基材。與此處所述實施例一起使用的軟質基材可為可彎曲的。名稱「軟質基材」或「基材」可與名稱「箔」或名稱「網格」同義地使用。特別是,此處所述之數個實施例可利用來塗佈任何種類的軟質基材,舉例為用以製造具有均勻厚度之平塗層,或用以製造塗佈圖案或塗佈結構成預定形狀於軟質基材上或下方之塗佈結構的頂部上。除了陶瓷層,電子裝置及結構可藉由遮蔽、蝕刻及/或沈積形成於軟質基材上。The flexible substrate 111 may particularly include a flexible substrate, such as a plastic film, a web, a foil, a flexible glass, or a strip. The name soft substrate may also include other forms of soft substrate. The flexible substrate used with the embodiments described herein may be flexible. The name "soft substrate" or "substrate" can be used synonymously with the name "foil" or the name "grid". In particular, several of the embodiments described herein can be utilized to coat any kind of soft substrate, such as to make a flat coating with a uniform thickness, or to make a coating pattern or a coating structure into a predetermined Shaped on top of a coated structure on or under a soft substrate. In addition to ceramic layers, electronic devices and structures can be formed on soft substrates by masking, etching, and / or deposition.

根據此處所述之數個實施例,軟質基材111可包括選自群組的聚合物材料。群組為:聚丙烯腈(polyacrylonitrile)、聚酯(polyester)、聚醯胺(polyamide)、聚醯亞胺(polyimide)、聚烯(polyolefin)、聚四氟乙烯(polytetrafluoroethylene)、羧甲纖維素(carboxymethyl cellulose)、聚丙烯酸(polyacrylic acid)、聚乙烯(polyethylene)、聚對苯二甲酸乙二酯(polyethylene terephthalate)、聚苯醚(polyphenyl ether)、聚氯乙烯(polyvinyl chloride)、聚偏二氯乙烯(polyvinylidene chloride)、聚偏二氟乙烯(polyvinylidene fluoride)、聚二氟乙烯-六氟丙烯共聚高分子(poly(vinylidenefluoride-co-hexafluoropropylene))、聚乳酸(polylactic acid)、聚丙烯(polypropylene)、聚丁烯(polybutylene)、聚對苯二甲酸二丁酯(polybutylene terephthalate)、聚碳酸酯(polycarbonate)、聚四氟乙烯(polytetrafluoroethylene)、聚苯乙烯(polystyrene)、丙烯腈-丁二烯-苯乙烯共聚物(acrylonitrile butadiene styrene)、聚甲基丙烯酸甲酯(poly(methyl methacrylate))、聚甲醛(polyoxymethylene)、聚碸(polysulfone)、苯乙烯-丙烯腈(styrene-acrylonitrile)、苯乙烯-丁二烯橡膠(styrene-butadiene rubber)、乙烯醋酸乙烯酯共聚物(ethylene vinyl acetate)、苯乙烯-馬來酸酐共聚物(styrene maleic anhydride)、及其之組合。在舉例為鋰基電化學能儲存裝置中所發現的劇烈減少條件(strongly reducing conditions)中為穩定之任何其他聚合物材料可亦使用。根據此處所述之數個實施例,藉由特別是選擇抗鹼輸入材料,軟質基材111及/或陶瓷層52可最佳化而用於包含強鹼性電解質之電化學能儲存裝置。舉例來說,軟質基材111可包括聚烯或聚丙烯腈來取代聚酯。According to several embodiments described herein, the soft substrate 111 may include a polymer material selected from the group. The group is: polyacrylonitrile, polyester, polyamide, polyimide, polyolefin, polytetrafluoroethylene, carmellose (carboxymethyl cellulose), polyacrylic acid, polyethylene, polyethylene terephthalate, polyphenyl ether, polyvinyl chloride, polyvinylidene chloride Vinylidene chloride, polyvinylidene fluoride, poly (vinylidenefluoride-co-hexafluoropropylene), polylactic acid, polypropylene ), Polybutylene, polybutylene terephthalate, polycarbonate, polytetrafluoroethylene, polystyrene, acrylonitrile-butadiene -Acrylonitrile butadiene styrene, poly (methyl methacrylate), polyoxymethylene, poly (pol) ysulfone), styrene-acrylonitrile, styrene-butadiene rubber, ethylene vinyl acetate, styrene-maleic anhydride copolymer (styrene maleic anhydride), and combinations thereof. Any other polymer material that is stable in the strongly reducing conditions found in, for example, lithium-based electrochemical energy storage devices may also be used. According to several embodiments described herein, the soft substrate 111 and / or the ceramic layer 52 can be optimized for use in an electrochemical energy storage device containing a strong alkaline electrolyte by particularly selecting an alkali-resistant input material. For example, the flexible substrate 111 may include polyene or polyacrylonitrile instead of polyester.

根據此處所述之數個實施例,軟質基材111之材料特別是聚合物材料,可具有例如是等同於或大於200 °C的高熔點。包括具有高熔點之聚合物材料的電化學能儲存裝置的元件可在具有快速充電周期之電化學能儲存裝置中為有用的。在實行中,特別是藉由根據此處所述數個實施例之包括具有高熔點之聚合物材料的元件之高熱穩定性,裝配有此種元件的電化學能儲存裝置可能不會太熱敏感,且可容許因快速充電導致之溫度增加,而不會不利的改變元件或損害電化學能儲存裝置。當實行數個實施例時,較快的充電周期可達成,而可在以較短時間中充電之電動車中有益處。According to several embodiments described herein, the material of the soft substrate 111, especially the polymer material, may have a high melting point, for example, equal to or greater than 200 ° C. An element of an electrochemical energy storage device including a polymer material having a high melting point may be useful in an electrochemical energy storage device having a fast charging cycle. In practice, and particularly with the high thermal stability of elements including polymer materials with high melting points according to several embodiments described herein, electrochemical energy storage devices equipped with such elements may not be too thermally sensitive , And can allow the temperature increase due to rapid charging, without adversely changing components or damaging the electrochemical energy storage device. When several embodiments are implemented, a faster charging cycle can be achieved, which can be beneficial in electric vehicles that can be charged in a shorter time.

根據此處所述之數個實施例,具有陶瓷層52及不具有陶瓷層52的軟質基材111可具有從10%至90%之範圍中的多孔性,特別是具有從40%至80%之範圍中的多孔性。軟質基材111及/或陶瓷層52可實際上提供電解質之路徑,及可減少電解質穿透時間。在本揭露之內文中,「多孔性」例如是軟質基材111及/或陶瓷層52的多孔性,可與開放孔之可及性(accessibility)相關。舉例來說,多孔性可經由常見的方法決定,例如是舉例為藉由壓汞法(mercury porosimetry)之方法及/或可以假設所有孔係為開放孔來從材料之體積及密度計算。According to several embodiments described herein, the soft substrate 111 with and without the ceramic layer 52 may have porosity in a range from 10% to 90%, and in particular, from 40% to 80% Porosity in the range. The soft substrate 111 and / or the ceramic layer 52 may actually provide a path for the electrolyte, and may reduce the electrolyte penetration time. In the context of this disclosure, “porosity” is, for example, the porosity of the soft substrate 111 and / or the ceramic layer 52, and may be related to the accessibility of the open pores. For example, porosity can be determined by common methods, for example, by the method of mercury porosimetry and / or it can be calculated from the volume and density of the material by assuming that all pores are open.

根據此處所述之數個實施例,電化學能儲存裝置可為鋰離子電池。在鋰離子電池中,軟質基材111可時常以微孔聚乙烯及聚烯製成。在充電及放電周期之電化學反應期間,鋰離子係遷移通過鋰離子電池之此兩個電極之間的軟質基材111及/或陶瓷層52中的孔。高多孔性可增加離子導電性。然而,當舉例為在周期期間所形成之鋰枝晶(Li-dendrites)在電極之間產生短路時,具有高多孔性之一些軟質基材111可能易受到電性短路的影響。According to several embodiments described herein, the electrochemical energy storage device may be a lithium-ion battery. In a lithium-ion battery, the soft substrate 111 can often be made of microporous polyethylene and polyolefin. During the electrochemical reaction during the charge and discharge cycles, lithium ions migrate through the holes in the soft substrate 111 and / or the ceramic layer 52 between the two electrodes of the lithium ion battery. High porosity increases ionic conductivity. However, when, for example, lithium dendrites formed during a cycle cause a short circuit between electrodes, some soft substrates 111 having high porosity may be susceptible to electrical short circuits.

本揭露可提供電化學能儲存裝置之非常薄的元件,例如是非常薄的隔離件。當實行數個實施例時,對電化學能儲存裝置之活動沒有貢獻的電化學能儲存裝置之成份的比例可減少。再者,厚度的減少可同時致使離子導電性增加。根據此處所述之數個實施例的元件可允許舉例為電池堆疊之密度增加,使得大量的能量可儲存於相同體積中。當實行數個實施例時,有限的電流密度可在擴大之電極區域同樣地增加。The disclosure can provide very thin components of electrochemical energy storage devices, such as very thin separators. When several embodiments are implemented, the proportion of the components of the electrochemical energy storage device that does not contribute to the activity of the electrochemical energy storage device may be reduced. Furthermore, a reduction in thickness can simultaneously lead to an increase in ionic conductivity. Elements according to several embodiments described herein may allow, for example, an increased density of battery stacks, so that a large amount of energy can be stored in the same volume. When several embodiments are implemented, the limited current density can be similarly increased in the enlarged electrode area.

此處所述之數個實施例可使用於製造隔離件。隔離件可與電化學能儲存裝置分離,或直接地整合至電化學能儲存裝置中,例如是舉例為具有整合之隔離件的鋰離子電池。在整合之隔離件應用中,單層隔離件或多層隔離件可直接地形成於電化學能儲存裝置的電極上。再者,陶瓷層52可塗佈於電化學能儲存裝置之電極上,例如是陽極或陰極。因此,電化學能儲存裝置之元件可為隔離件或隔離膜、電解質、陽極及/或陰極。The several embodiments described herein can be used to make spacers. The separator can be separated from the electrochemical energy storage device or directly integrated into the electrochemical energy storage device, such as a lithium-ion battery with an integrated separator, for example. In an integrated separator application, a single-layer separator or a multilayer separator may be formed directly on an electrode of an electrochemical energy storage device. Furthermore, the ceramic layer 52 may be coated on an electrode of an electrochemical energy storage device, such as an anode or a cathode. Therefore, the components of the electrochemical energy storage device may be a separator or a separator, an electrolyte, an anode, and / or a cathode.

根據此處所述之數個實施例,陶瓷層52可藉由蒸發材料形成,特別是金屬。特別是,陶瓷層52可藉由舉例為在感應加熱坩鍋中蒸發金屬形成。再者,例如是舉例為氧之處理氣體可提供而用以形成陶瓷層52。根據此處所述之數個實施例,陶瓷層52可藉由反應蒸發形成。當實行數個實施例時,相較於一般之隔離件塗佈技術,可達成非常高的塗佈速度。一般之隔離件塗佈技術例如是浸塗(dip-coating)。特別是,塗佈速度可根據將形成於軟質基材111上之陶瓷材料的厚度及形式來變化。According to several embodiments described herein, the ceramic layer 52 may be formed by an evaporation material, particularly a metal. In particular, the ceramic layer 52 may be formed by, for example, evaporating a metal in an induction heating crucible. Furthermore, for example, a processing gas such as oxygen may be provided to form the ceramic layer 52. According to several embodiments described herein, the ceramic layer 52 may be formed by reactive evaporation. When several embodiments are implemented, very high coating speeds can be achieved compared to general spacer coating techniques. A common spacer coating technique is, for example, dip-coating. In particular, the coating speed can be changed according to the thickness and form of the ceramic material to be formed on the soft substrate 111.

根據此處所述之數個實施例,形成於軟質基材111上之陶瓷層的厚度可等同於或大於25 nm,特別是等同於或大於50 nm,特別是等同於或大於100 nm,及/或等同於或小於1000 nm,特別是等同於或小於530 nm,特別是等同於或小於150 nm。當實行數個實施例時,可達成在電化學能儲存裝置中之非常高的能量密度。According to several embodiments described herein, the thickness of the ceramic layer formed on the flexible substrate 111 may be equal to or greater than 25 nm, particularly equal to or greater than 50 nm, and particularly equal to or greater than 100 nm, and / Or equal to or less than 1000 nm, especially equal to or less than 530 nm, and especially equal to or less than 150 nm. When implementing several embodiments, a very high energy density in an electrochemical energy storage device can be achieved.

軟質基材111可在處理腔室100中處理時移動,舉例為通過蒸發源102。根據此處所述之數個實施例,可設置基材傳送機構。舉例來說,軟質基材111可沿著傳送路徑P傳送通過蒸發源102。The soft substrate 111 can be moved during processing in the processing chamber 100, for example, by the evaporation source 102. According to several embodiments described herein, a substrate transfer mechanism may be provided. For example, the soft substrate 111 may be conveyed through the evaporation source 102 along the conveyance path P.

如第1圖中所示,可設置第一基材支撐件及/或第二基材支撐件。第二基材支撐件與第一基材支撐件相隔一距離配置。第一基材支撐件及/或第二基材支撐件可亦意指為滾軸,舉例為第一滾軸及/或第二滾軸。第一滾軸22及第二滾軸24可為基材傳送機構的一部份。根據此處所述之數個實施例,軟質基材111可從第一滾軸22傳送至第二滾軸24。軟質基材111可從第一滾軸22沿著傳送路徑P運載及/或傳送至第二滾軸24(由具有點在中心之圓所示,以表示垂直於投影面的傳送路徑P)。根據此處所述之數個實施例,基材傳送機構可裝配,以從第一滾軸22沿著傳送路徑P傳送軟質基材111至第二滾軸24。蒸發源102可設置於第一滾軸22及第二滾軸24之間的一位置處。根據此處所述之數個實施例,蒸發源102可沿著傳送路徑P配置。根據此處所述之數個實施例,陶瓷層52可在軟質基材111從第一滾軸22傳送至第二滾軸24時形成。As shown in FIG. 1, a first substrate support and / or a second substrate support may be provided. The second substrate supporting member is disposed at a distance from the first substrate supporting member. The first substrate support and / or the second substrate support may also be referred to as a roller, such as a first roller and / or a second roller. The first roller 22 and the second roller 24 may be part of a substrate transfer mechanism. According to several embodiments described herein, the soft substrate 111 may be transferred from the first roller 22 to the second roller 24. The soft substrate 111 can be carried from the first roller 22 along the conveying path P and / or to the second roller 24 (shown by a circle with a point in the center to indicate the conveying path P perpendicular to the projection plane). According to several embodiments described herein, the substrate transfer mechanism may be assembled to transfer the soft substrate 111 to the second roller 24 along the transfer path P from the first roller 22. The evaporation source 102 may be disposed at a position between the first roller 22 and the second roller 24. According to several embodiments described herein, the evaporation source 102 may be configured along the transfer path P. According to several embodiments described herein, the ceramic layer 52 may be formed when the soft substrate 111 is transferred from the first roller 22 to the second roller 24.

於一些應用中,軟質基材111可從儲存滾軸退捲,可傳送於塗佈鼓之外表面上,及可沿著其他滾軸的外表面導引。塗佈之軟質基材可捲於捲繞捲軸上。In some applications, the soft substrate 111 can be unrolled from the storage roller, can be conveyed on the outer surface of the coating drum, and can be guided along the outer surface of other rollers. The coated soft substrate can be wound on a winding reel.

於本揭露之內容中,舉例為作為滾軸組件之一部份的「滾輪(roll)」、「滾軸(roller)」或「滾軸裝置(roller device)」可理解為提供一表面的一裝置,例如是軟質基材111(或部份之軟質基材111)之基材(或部份之基材)可在基材存在於沈積配置(例如是沈積設備或蒸發腔室)中期間接觸此表面。至少一部份的滾軸裝置可包括圓形的形狀,用以接觸基材。於一些實施例中,滾軸裝置可具有實質上圓柱形狀。此實質上圓柱形狀可繞著直線縱軸形成,或可繞著彎曲縱軸形成。根據一些實施例,如此處所述之滾軸裝置可適用於接觸軟質基材。此處所意指之滾軸裝置可為導引滾軸、塗佈機滾軸(spreader roller)、偏轉滾軸或類似者。導引滾軸適用於在基材塗佈(或部份之基材塗佈)或在基材存在於處理設備中時導引基材。塗佈機滾軸適用於提供將塗佈之基材的定義張力。偏轉滾軸用以根據定義之行進路徑偏轉基材。In the content of this disclosure, for example, "roller", "roller" or "roller device" as part of a roller assembly can be understood as providing a surface A device, such as a substrate (or a portion of a flexible substrate 111) that is a soft substrate 111 (or a portion of the flexible substrate 111) may be contacted during the substrate's presence in a deposition configuration (such as a deposition equipment or evaporation chamber) This surface. At least a part of the roller device may include a circular shape for contacting the substrate. In some embodiments, the roller device may have a substantially cylindrical shape. This substantially cylindrical shape may be formed around a linear longitudinal axis or may be formed around a curved longitudinal axis. According to some embodiments, a roller device as described herein may be adapted to contact a soft substrate. The roller device referred to herein may be a guide roller, a spreader roller, a deflection roller, or the like. The guide roller is suitable for guiding the substrate when the substrate is coated (or part of the substrate is coated) or when the substrate is present in the processing equipment. Coater rollers are suitable to provide a defined tension on the substrate to be coated. The deflection roller is used to deflect the substrate according to a defined path of travel.

根據此處所述之數個實施例,處理腔室可裝配以用於處理具有500 m或更多、1000 m或更多、或數公里之長度的軟質基材111。基材寬度可為100 mm或更多、300 mm或更多、500 mm或更多、或1 m或更多。基材寬度可為5 m或更少、特別是2 m或更少。一般來說,基材厚度可為5 µm或更多及200 µm或更少,特別是從15 µm至20 µm。According to several embodiments described herein, the processing chamber may be equipped for processing a soft substrate 111 having a length of 500 m or more, 1000 m or more, or several kilometers. The substrate width may be 100 mm or more, 300 mm or more, 500 mm or more, or 1 m or more. The substrate width may be 5 m or less, especially 2 m or less. In general, the substrate thickness can be 5 µm or more and 200 µm or less, especially from 15 µm to 20 µm.

第2圖繪示用以沈積陶瓷層52於軟質基材111之表面上的處理腔室100的示意圖。處理腔室100可包括裝載/卸載腔室101。裝載/卸載腔室101可裝配,以裝載軟質基材111至處理腔室100中及/或從處理腔室100卸載軟質基材111。根據此處所述之數個實施例,裝載/卸載腔室可在處理軟質基材111期間保持在真空下。真空裝置190可設置以排氣裝載/卸載腔室101,真空裝置190例如是真空幫浦。FIG. 2 is a schematic diagram of a processing chamber 100 for depositing a ceramic layer 52 on a surface of a soft substrate 111. The processing chamber 100 may include a loading / unloading chamber 101. The loading / unloading chamber 101 may be assembled to load and / or unload the soft substrate 111 into and from the processing chamber 100. According to several embodiments described herein, the loading / unloading chamber may be maintained under vacuum during processing of the soft substrate 111. The vacuum device 190 may be provided to exhaust the loading / unloading chamber 101, and the vacuum device 190 is, for example, a vacuum pump.

根據此處所述之數個實施例,裝載/卸載腔室101可包括退捲模組110及/或再捲模組130。退捲模組110可包括退捲滾軸,用以退捲軟質基材111。在處理期間,軟質基材111可藉由一或多個導引滾軸112退捲(由箭頭113表示)及/或導引至塗佈鼓120。在處理之後,軟質基材111可捲繞(箭頭114)於再捲模組130中之再捲滾軸上。According to several embodiments described herein, the loading / unloading chamber 101 may include an unwinding module 110 and / or a rewinding module 130. The unwinding module 110 may include a unwinding roller for unwinding the soft substrate 111. During processing, the soft substrate 111 may be unrolled (indicated by arrow 113) and / or guided to the coating drum 120 by one or more guide rollers 112. After processing, the soft substrate 111 can be wound (arrow 114) on a rewinding roller in the rewinding module 130.

再者,裝載/卸載腔室101可包括張力模組180,舉例為包括一或多個張力滾軸。裝載/卸載腔室101可亦額外地或替代地包括樞軸裝置170,例如是舉例為樞軸臂。樞軸裝置170可裝配以相對於再捲模組130為可移動的。Furthermore, the loading / unloading chamber 101 may include a tension module 180, for example, including one or more tension rollers. The loading / unloading chamber 101 may also additionally or alternatively include a pivot device 170, such as a pivot arm, for example. The pivot device 170 may be assembled to be movable relative to the rewind module 130.

根據此處所述之數個實施例,退捲模組110、再捲模組130、導引滾軸112、樞軸裝置170、張力模組180可為基材傳送機構及/或滾軸組件之一部份。According to several embodiments described herein, the unwinding module 110, the rewinding module 130, the guide roller 112, the pivot device 170, and the tension module 180 may be a substrate transfer mechanism and / or a roller assembly Part of it.

根據此處所述之數個實施例,處理腔室100可包括蒸發腔室103。蒸發腔室103可包括蒸發源102。蒸發源102可類似於或相同於特別是參照第1圖所說明的蒸發源102。蒸發腔室103可藉由真空裝置190排氣,真空裝置190可亦使用以排氣裝載/卸載腔室101。蒸發腔室103可額外地或替代地具有一真空裝置,可亦使用以排氣裝載/卸載腔室101的此真空裝置與真空裝置190分離。According to several embodiments described herein, the processing chamber 100 may include an evaporation chamber 103. The evaporation chamber 103 may include an evaporation source 102. The evaporation source 102 may be similar to or the same as the evaporation source 102 described in particular with reference to FIG. 1. The evaporation chamber 103 may be exhausted by a vacuum device 190, and the vacuum device 190 may also be used to exhaust the loading / unloading chamber 101. The evaporation chamber 103 may additionally or alternatively have a vacuum device, and this vacuum device for loading / unloading the chamber 101 with exhaust gas may also be used separately from the vacuum device 190.

如第2圖中所範例性繪示,蒸發源102可包括材料源140。材料源140可裝配以蒸發材料,特別是金屬。根據此處所述之數個實施例,材料源140可包括一或多個蒸發皿。材料源140可更包括一或多個線,佈線至材料源140中。特別是,各蒸發皿可有一條線。此一或多個線可包括將蒸發之材料及/或以將蒸發的材料製成。特別是,此一或多個線可提供將蒸發之材料。As exemplarily shown in FIG. 2, the evaporation source 102 may include a material source 140. The material source 140 can be assembled to evaporate materials, especially metals. According to several embodiments described herein, the material source 140 may include one or more evaporation dishes. The material source 140 may further include one or more lines routed into the material source 140. In particular, there can be one line for each evaporation dish. The one or more lines may include and / or be made from a material to be evaporated. In particular, the one or more wires may provide a material that will evaporate.

根據此處所述之數個實施例,材料源140可為一或多個感應加熱坩鍋。藉由射頻(RF)感應加熱,特別是中頻(MF)感應加熱,感應加熱坩鍋可舉例為裝配以蒸發真空環境中的金屬。再者,金屬可提供於可交換的坩鍋中,例如是舉例為在一或多個石墨容器中。可交換的坩鍋可包括絕緣材料,絕緣材料圍繞坩鍋。一或多個感應線圈可纏繞在坩鍋及絕緣材料。根據此處所述之數個實施例,此一或多個感應線圈可為水冷卻。在使用可交換的坩鍋之處,無需設置線至材料源140中。可交換的坩鍋可預先裝載有金屬及可定期地替換或補充。特別是,分批提供金屬具有準確地控制蒸發之金屬的總量的優點。According to several embodiments described herein, the material source 140 may be one or more induction heating crucibles. With radio frequency (RF) induction heating, especially intermediate frequency (MF) induction heating, induction heating crucibles can be exemplified as being assembled to evaporate metals in a vacuum environment. Furthermore, the metal may be provided in an exchangeable crucible, such as, for example, one or more graphite containers. The exchangeable crucible may include an insulating material surrounding the crucible. One or more induction coils can be wound around the crucible and insulating material. According to several embodiments described herein, the one or more induction coils may be water cooled. Where an interchangeable crucible is used, there is no need to place a wire into the material source 140. The exchangeable crucible can be pre-loaded with metal and can be replaced or replenished periodically. In particular, supplying metals in batches has the advantage of accurately controlling the total amount of evaporated metal.

不像一般使用電阻加熱坩鍋來蒸發金屬的蒸發方法,利用感應加熱坩鍋係提供在坩鍋之內側產生的加熱製程,而取代外部源經由熱傳導提供加熱製程。感應加熱坩鍋具有坩鍋之所有壁非常快速及均勻加熱的優點。金屬之蒸發溫度可比一般電阻加熱坩鍋更嚴密地控制。當使用感應加熱坩鍋時,加熱坩鍋高於金屬的蒸發溫度可能不必要的。當實行數個實施例時,可提供更可控及有效的金屬蒸發,以使形成於軟質基材上的陶瓷層更為均勻。藉由減少蒸發金屬噴濺之可能性,坩鍋之溫度的精密控制可亦避免/減少陶瓷層中之銷孔及通孔缺陷。在隔離件中之銷孔及通孔缺陷可能導致電化電池中的短路。Unlike the conventional evaporation method that uses a resistance heating crucible to evaporate metal, the induction heating crucible provides a heating process generated inside the crucible, instead of providing an external heating process through heat conduction. Induction heating crucibles have the advantage of very fast and uniform heating of all walls of the crucible. The evaporation temperature of metal can be controlled more closely than that of a general resistance heating crucible. When using an induction heating crucible, heating the crucible above the evaporation temperature of the metal may not be necessary. When several embodiments are implemented, more controllable and efficient metal evaporation can be provided to make the ceramic layer formed on the soft substrate more uniform. By reducing the possibility of splattering of evaporated metal, precise control of the temperature of the crucible can also avoid / reduce pin hole and through hole defects in the ceramic layer. Defects in pin holes and through holes in separators may cause short circuits in electrochemical cells.

根據此處所述之數個實施例,感應加熱坩鍋可舉例為由一或多個感應線圈(未繪示於圖式中)所圍繞。感應線圈可為感應加熱坩鍋之組成部份。再者,感應線圈及感應加熱坩鍋可提供為分離部件。分別地提供感應加熱坩鍋及感應線圈可提供蒸發設備之簡易維護。According to several embodiments described herein, an induction heating crucible can be exemplified by being surrounded by one or more induction coils (not shown in the drawings). The induction coil can be part of the induction heating crucible. Furthermore, the induction coil and the induction heating crucible can be provided as separate components. Separate induction heating crucibles and induction coils provide easy maintenance of the evaporation equipment.

根據此處所述之數個實施例,蒸發源可包括一或多個電極束源。此一或多個電極束源可提供一或多個電極束,以蒸發將蒸發的材料。According to several embodiments described herein, the evaporation source may include one or more electrode beam sources. The one or more electrode beam sources may provide one or more electrode beams to evaporate the material to be evaporated.

根據此處所述之數個實施例,可設置電源240(見於第3圖中)。電源240可連接於感應線圈。電源可為交流(AC)電源,可裝配以提供具有低電壓但高電流及高頻率的電力。再者,反應功率可舉例為藉由包括共振線圈來增加。根據此處所述之數個實施例,除了導電材料或取代導電材料而言,感應加熱坩鍋可舉例為包括鐵磁材料。磁性材料可舉例為改善感應加熱製程,及可提供金屬之蒸發溫度的較佳控制。According to several embodiments described herein, a power source 240 may be provided (see FIG. 3). The power source 240 can be connected to the induction coil. The power source may be an alternating current (AC) power source and may be assembled to provide power with low voltage but high current and high frequency. Furthermore, the reaction power can be increased by including a resonance coil, for example. According to several embodiments described herein, in addition to or in place of a conductive material, an induction heating crucible may be exemplified by including a ferromagnetic material. Examples of magnetic materials include improved induction heating processes and better control of the evaporation temperature of metals.

根據此處所述之數個實施例,處理腔室100之塗佈鼓120可分離裝載/卸載腔室101與蒸發腔室103。塗佈鼓120可裝配以導引軟質基材111至蒸發腔室103中。特別是,塗佈鼓120可配置於處理腔室中,使得軟質基材111可通過蒸發源102的上方。根據此處所述之數個實施例,塗佈鼓120可進行冷卻。According to several embodiments described herein, the coating drum 120 of the processing chamber 100 can separate the loading / unloading chamber 101 and the evaporation chamber 103. The coating drum 120 may be assembled to guide the soft substrate 111 into the evaporation chamber 103. In particular, the coating drum 120 may be disposed in the processing chamber so that the soft substrate 111 can pass above the evaporation source 102. According to several embodiments described herein, the coating drum 120 may be cooled.

根據此處所述之數個實施例,蒸發源102可包括氣體供應器,用以供應處理氣體。氣體供應器可包括第一氣體導引裝置及/或第二氣體導引裝置。第一氣體導引裝置及/或第二氣體導引裝置可配置,而用於可控制地導引第一處理氣體及/或第二處理氣體至蒸發源102及/或蒸發腔室103中。第一氣體導引裝置及/或第二氣體導引裝置可舉例為包括噴嘴及供應管,連接於舉例為第一處理氣體供應器及/第二處理氣體供應器,用以提供第一處理氣體及/或第二處理氣體至蒸發源102及/或蒸發腔室103中。According to several embodiments described herein, the evaporation source 102 may include a gas supplier for supplying a process gas. The gas supplier may include a first gas guiding device and / or a second gas guiding device. The first gas guiding device and / or the second gas guiding device may be configured to controllably guide the first processing gas and / or the second processing gas into the evaporation source 102 and / or the evaporation chamber 103. The first gas guide device and / or the second gas guide device may include, for example, a nozzle and a supply pipe, and are connected to the first process gas supplier and / or the second process gas supplier, for example, to provide a first process gas And / or the second processing gas into the evaporation source 102 and / or the evaporation chamber 103.

根據此處所述之數個實施例,第一處理氣體及第二處理氣體可以第一處理氣體及第二處理氣體之一比提供。此比可調整,使得陶瓷層52之化學計量可設定。舉例來說,第一處理氣體及第二處理氣體之比可設定,使得化學計量之陶瓷層52可形成,特別是完全的化學計量之陶瓷層52可形成。According to several embodiments described herein, the first processing gas and the second processing gas may be provided at a ratio of one of the first processing gas and the second processing gas. This ratio can be adjusted so that the stoichiometry of the ceramic layer 52 can be set. For example, the ratio of the first processing gas and the second processing gas can be set so that a stoichiometric ceramic layer 52 can be formed, and in particular, a fully stoichiometric ceramic layer 52 can be formed.

處理氣體可為反應氣體,特別是第一處理氣體及/或第二處理氣體可為反應氣體。特別是,處理氣體特別是第一處理氣體及/或第二處理氣體,可為與材料源140所蒸發之材料反應的反應氣體。此外,第一處理氣體及/或第二處理氣體可為與第一處理氣體及第二處理氣體之另一者反應的反應氣體。第一處理氣體及第二處理氣體之反應的生成物可為第三處理氣體,第三處理氣體可為反應氣體。特別是,第三處理氣體可為與材料源140所蒸發之材料反應的反應氣體。因此,第一處理氣體、第二處理氣體及第三處理氣體之任一者可為可與材料源140所蒸發之材料反應的反應氣體。The processing gas may be a reaction gas, and in particular, the first processing gas and / or the second processing gas may be a reaction gas. In particular, the processing gas, especially the first processing gas and / or the second processing gas, may be a reaction gas that reacts with the material evaporated by the material source 140. In addition, the first processing gas and / or the second processing gas may be a reaction gas that reacts with the other of the first processing gas and the second processing gas. The product of the reaction between the first processing gas and the second processing gas may be a third processing gas, and the third processing gas may be a reaction gas. In particular, the third processing gas may be a reaction gas that reacts with the material evaporated by the material source 140. Therefore, any one of the first processing gas, the second processing gas, and the third processing gas may be a reaction gas that can react with the material evaporated by the material source 140.

氣體供應器可裝配,以提供組成陶瓷層52之至少一元素。舉例來說,第一處理氣體及/或第二處理氣體可為及/或包括氧、臭氧、氬及其之組合。再者,氣體供應器可裝配,以提供組成陶瓷層52之至少兩個元素。舉例來說,第一處理氣體及/或第二處理氣體可為及/或包括氧、臭氧、氬及其之組合,及/或第一處理氣體及/或第二處理氣體之另一者可為及/或包括氫、水蒸汽、氬及其組合。第一處理氣體可不同於第二處理氣體。第一處理氣體可為第一反應氣體及/或第二處理氣體可為第二反應氣體。The gas supplier may be assembled to provide at least one element constituting the ceramic layer 52. For example, the first processing gas and / or the second processing gas may be and / or include oxygen, ozone, argon, and combinations thereof. Furthermore, the gas supplier may be assembled to provide at least two elements constituting the ceramic layer 52. For example, the first process gas and / or the second process gas may be and / or include oxygen, ozone, argon, and combinations thereof, and / or the other of the first process gas and / or the second process gas may be Is and / or includes hydrogen, water vapor, argon, and combinations thereof. The first processing gas may be different from the second processing gas. The first processing gas may be a first reaction gas and / or the second processing gas may be a second reaction gas.

針對氧包括於第一處理氣體中及/或水蒸汽包括於第二處理氣體中的情況來說,氧氣及/或水蒸汽可舉例為與已蒸發之金屬反應,以形成陶瓷層52於軟質基材111上。在本揭露之內容中,水蒸汽可理解為包含氫的處理氣體。例如是隔離件或隔離膜、電解質、陰極及陽極的電化學能儲存裝置的元件可包括Al(OH)3 。例如是鋁的金屬可舉例為藉由感應加熱坩鍋蒸發,及氧及水蒸汽可經由氣體導引裝置提供至已蒸發的金屬。For the case where oxygen is included in the first processing gas and / or water vapor is included in the second processing gas, oxygen and / or water vapor may be exemplified to react with the evaporated metal to form a ceramic layer 52 on a soft substrate. Wood 111. In the context of this disclosure, water vapor can be understood as a processing gas containing hydrogen. Elements of an electrochemical energy storage device such as a separator or a separator, an electrolyte, a cathode, and an anode may include Al (OH) 3 . Metals such as aluminum can be exemplified by induction heating crucible evaporation, and oxygen and water vapor can be provided to the evaporated metal via a gas guide.

根據此處所述之數個實施例,第二處理氣體可包含水蒸汽。水蒸汽可特別是供應至真空環境。再者,第一處理氣體可包括氧,及第二處理氣體可包含水蒸汽。特別是,供應氧及氫至蒸發源102可能致使水蒸汽形成於蒸發源102中。再者,當水蒸汽可能導致與鋰之不良反應時,流動速率可調整,使得沒有水蒸汽或實質上沒有水蒸汽仍位在將形成的元件上。According to several embodiments described herein, the second processing gas may include water vapor. Water vapor can be supplied in particular to a vacuum environment. Furthermore, the first processing gas may include oxygen, and the second processing gas may include water vapor. In particular, supplying oxygen and hydrogen to the evaporation source 102 may cause water vapor to form in the evaporation source 102. Furthermore, when water vapor may cause adverse reactions with lithium, the flow rate may be adjusted so that no or substantially no water vapor remains on the element to be formed.

蒸發源102可包括電漿源108。電漿源可裝配,以至少部份地離子化及/或解離處理氣體。特別是,電漿源108可裝配,以在材料源140及塗佈鼓120之間產生電漿。電漿源108可舉例為電子束裝置,裝配以利用電子束點燃電漿。根據此處所述之其他實施例,電漿源可為中空陽極沈積電漿源。藉由進一步減少蒸發金屬噴濺的可能性,電漿可有助於避免/減少基材上之多孔塗層中的銷孔及通孔。電漿可亦更激發已蒸發之金屬的粒子。根據此處所述之數個實施例,電漿可增加沈積於軟質基材上之多孔塗層的密度及均勻性。The evaporation source 102 may include a plasma source 108. The plasma source can be assembled to at least partially ionize and / or dissociate the process gas. In particular, the plasma source 108 may be assembled to generate a plasma between the material source 140 and the coating drum 120. The plasma source 108 may be exemplified by an electron beam device that is configured to ignite the plasma using the electron beam. According to other embodiments described herein, the plasma source may be a hollow anode deposition plasma source. By further reducing the possibility of splattering of evaporated metal, plasma can help avoid / reduce pin holes and through holes in porous coatings on substrates. Plasma can also excite particles of evaporated metal. According to several embodiments described herein, plasma can increase the density and uniformity of porous coatings deposited on soft substrates.

根據此處所述之數個實施例,蒸發源102可包括電漿源108,裝配以至少部份地離子化處理氣體。特別是,電漿源108可裝配以在材料源140及蒸發源102的出口之間產生電漿。特別是,電漿源108可裝配,以在材料源140及第一氣體導引裝置及/或第二氣體導引裝置之間產生電漿。也就是說,電漿源108可裝配,以在材料源140及將塗佈之軟質基材111之間產生電漿。當實行數個實施例時,可改善陶瓷層52之化學計量。根據有利的實施例,可實際上取得完全的化學計量之陶瓷層52。According to several embodiments described herein, the evaporation source 102 may include a plasma source 108 configured to at least partially ionize the processing gas. In particular, the plasma source 108 may be assembled to generate a plasma between the material source 140 and the outlet of the evaporation source 102. In particular, the plasma source 108 may be assembled to generate a plasma between the material source 140 and the first gas guide and / or the second gas guide. That is, the plasma source 108 can be assembled to generate a plasma between the material source 140 and the soft substrate 111 to be coated. When several embodiments are implemented, the stoichiometry of the ceramic layer 52 can be improved. According to an advantageous embodiment, a fully stoichiometric ceramic layer 52 can be obtained virtually.

根據此處所述之數個實施例,處理腔室可包括氧化模組150。氧化模組150可為退火模組,用以退火陶瓷層52。如第2圖中所範利性繪示,氧化模組150可配置於蒸發腔室103的下游。氧化模組150可裝配,以使陶瓷層52處於氧化環境及/或退火環境。根據此處所述之數個實施例,陶瓷層52可特別是在溫度升高下處於氧化環境及/或退火環境。再者,氧化模組150可裝配,以在氧化距離及/或退火距離處使陶瓷層處於氧化環境及/或退火環境。氧化距離及/或退火距離可夠長,以取得所欲總量之氧化及/或退火。當實行數個實施例時,可改善陶瓷層52之化學計量。根據有利之實施例,可實際上取得完全的化學計量之陶瓷層52。According to several embodiments described herein, the processing chamber may include an oxidation module 150. The oxidation module 150 may be an annealing module for annealing the ceramic layer 52. As shown in FIG. 2, the oxidation module 150 may be disposed downstream of the evaporation chamber 103. The oxidation module 150 can be assembled so that the ceramic layer 52 is in an oxidation environment and / or an annealing environment. According to several embodiments described herein, the ceramic layer 52 may be in an oxidizing environment and / or an annealing environment, particularly at elevated temperatures. Furthermore, the oxidation module 150 can be assembled to place the ceramic layer in an oxidation environment and / or an annealing environment at an oxidation distance and / or an annealing distance. The oxidation distance and / or annealing distance may be long enough to obtain the desired total amount of oxidation and / or annealing. When several embodiments are implemented, the stoichiometry of the ceramic layer 52 can be improved. According to an advantageous embodiment, a fully stoichiometric ceramic layer 52 can be obtained virtually.

在本應用之內容中,「氧化環境」例如是陶瓷層52所可處之氧化環境,可理解為有利於氧化反應的環境,以舉例為改善陶瓷層52的化學計量。根據此處所述之數個實施例,氧化環境可包含多於20 vol.-%之氧。In the content of this application, the “oxidizing environment” is, for example, an oxidizing environment in which the ceramic layer 52 can be located, and can be understood as an environment that is favorable for the oxidation reaction. An example is to improve the stoichiometry of the ceramic layer 52. According to several embodiments described herein, the oxidizing environment may contain more than 20 vol .-% oxygen.

根據此處所述之數個實施例,氧化模組150可包括氣體組件。氣體組件可裝配以提供氧化氣體,例如是氧。根據此處所述之數個實施例,氧化模組150可包括加熱組件(未繪示)。加熱組件可裝配,以提高供應之氧化氣體、軟質基材111及陶瓷層25之至少一者的溫度。According to several embodiments described herein, the oxidation module 150 may include a gas component. The gas assembly can be assembled to provide an oxidizing gas, such as oxygen. According to several embodiments described herein, the oxidation module 150 may include a heating element (not shown). The heating assembly can be assembled to increase the temperature of at least one of the supplied oxidizing gas, the soft substrate 111 and the ceramic layer 25.

根據此處所述之數個實施例,氧化模組150可包括吸取裝置。吸取裝置可裝配,以吸取超量之氧化氣體,也就是不使用來氧化陶瓷層52的氧化氣體。吸取裝置可相對於軟質基材111配置而相反於氣體組件。因此,由氣體組件供應之處理氣體可提供至陶瓷層52,行經軟質基材111,及由吸取裝置吸取。當實行數個實施例時,可避免處理腔室100之污染。According to several embodiments described herein, the oxidation module 150 may include a suction device. The suction device can be assembled to suck an excessive amount of an oxidizing gas, that is, an oxidizing gas that is not used to oxidize the ceramic layer 52. The suction device may be disposed with respect to the soft substrate 111 and opposite to the gas component. Therefore, the processing gas supplied from the gas assembly can be supplied to the ceramic layer 52, passed through the soft substrate 111, and sucked by the suction device. When several embodiments are implemented, contamination of the processing chamber 100 can be avoided.

再者,氧化模組150可包括電漿源。氧化模組150之電漿源可裝配,以在氣體組件及軟質基材之間產生電漿。氧化模組150之電漿源可舉例為電子束裝置,裝配以利用電子束點燃電漿。根據此處所述之其他實施例,電漿源可為中空陽極沈積電漿源。再者,氧化模組150之電漿源可相同或類似於特別是參照第2及3圖所述之蒸發源102的電漿源108。電漿可離子化及/或加熱氣體組件所供應的氧化氣體。因此,陶瓷層52之氧化率可增加。Furthermore, the oxidation module 150 may include a plasma source. The plasma source of the oxidation module 150 can be assembled to generate a plasma between the gas component and the soft substrate. An example of the plasma source of the oxidation module 150 is an electron beam device, which is assembled to ignite the plasma using the electron beam. According to other embodiments described herein, the plasma source may be a hollow anode deposition plasma source. Furthermore, the plasma source of the oxidation module 150 may be the same or similar to the plasma source 108 of the evaporation source 102 described in particular with reference to FIGS. 2 and 3. Plasma can ionize and / or heat the oxidizing gas supplied by the gas assembly. Therefore, the oxidation rate of the ceramic layer 52 can be increased.

根據此處所述之數個實施例,氧化模組150可包括加熱組件。加熱組件可裝配,以提高氧化腔室、氧化環境、軟質基材111及陶瓷層52之至少一者的溫度。特別是,加熱組件可裝配以產生升高的溫度。因此,陶瓷層52的氧化率可增加。當實行數個實施例時,可取得完全的化學計量之陶瓷層。According to several embodiments described herein, the oxidation module 150 may include a heating component. The heating assembly can be assembled to increase the temperature of at least one of the oxidation chamber, the oxidation environment, the soft substrate 111 and the ceramic layer 52. In particular, the heating assembly can be assembled to produce an elevated temperature. Therefore, the oxidation rate of the ceramic layer 52 can be increased. When implementing several embodiments, a fully stoichiometric ceramic layer can be obtained.

第3圖繪示第2圖中所示之處理腔室100的放大圖。根據此處所述之數個實施例,蒸發源102可包括氣流控制器220。氣流控制器220可裝配,以獨立地設定第一處理氣體之第一氣體流動速率及/或第二處理氣體之第二氣體流動速率。第一處理氣體之第一氣體流動速率可不同於第二處理氣體之第二氣體流動速率。FIG. 3 is an enlarged view of the processing chamber 100 shown in FIG. 2. According to several embodiments described herein, the evaporation source 102 may include an airflow controller 220. The airflow controller 220 may be assembled to independently set a first gas flow rate of the first process gas and / or a second gas flow rate of the second process gas. The first gas flow rate of the first processing gas may be different from the second gas flow rate of the second processing gas.

氣流控制器220可連接於第一氣體導引裝置及第二氣體導引裝置之至少一者。舉例來說,氣流控制器220可裝配,以調整供應至第一氣體導引裝置及/或第二氣體導引裝置之流動速率及/或功率。The airflow controller 220 may be connected to at least one of the first gas guiding device and the second gas guiding device. For example, the airflow controller 220 may be configured to adjust the flow rate and / or power supplied to the first gas guide and / or the second gas guide.

根據此處所述之數個實施例,第一處理氣體及第二處理氣體可以第一處理氣體及第二處理氣體之一比提供。此比可調整,使得陶瓷層52的化學計量可設定。舉例來說,第一處理氣體及第二處理氣體之比可設定,使得化學計量之陶瓷層52可形成,特別是完全的化學計量的陶瓷層52可形成。According to several embodiments described herein, the first processing gas and the second processing gas may be provided at a ratio of one of the first processing gas and the second processing gas. This ratio can be adjusted so that the stoichiometry of the ceramic layer 52 can be set. For example, the ratio of the first processing gas and the second processing gas can be set so that a stoichiometric ceramic layer 52 can be formed, and in particular, a fully stoichiometric ceramic layer 52 can be formed.

再者,氣流控制器220可為處理腔室100的一部份,例如是處理腔室100之控制系統的一部份。根據此處所述之數個實施例,處理腔室100可包括控制系統。控制系統可連接於蒸發源102、氧化模組150、第一氣體導引裝置、第二氣體導引裝置、電漿源108及電源240之至少一者。根據此處所述之數個實施例,控制系統可裝配以調整供應至蒸發源102之功率,供應至電漿源108之功率,第一氣體導引裝置及/或第二氣體導引裝置導引至蒸發源102中之處理氣體的總量及/或處理氣體之氣流的定向,氧化模組150供應之氧化氣體的總量及/或氧化氣體之氣流的定向,及吸取裝置之吸取力的至少一者。Furthermore, the airflow controller 220 may be a part of the processing chamber 100, for example, a part of a control system of the processing chamber 100. According to several embodiments described herein, the processing chamber 100 may include a control system. The control system may be connected to at least one of the evaporation source 102, the oxidation module 150, the first gas guiding device, the second gas guiding device, the plasma source 108, and the power source 240. According to several embodiments described herein, the control system may be equipped to adjust the power supplied to the evaporation source 102, the power supplied to the plasma source 108, the first gas guiding device and / or the second gas guiding device. The total amount of processing gas and / or the orientation of the gas flow leading to the evaporation source 102, the total amount of the oxidation gas supplied by the oxidation module 150 and / or the orientation of the gas flow of the oxidation gas, and the At least one.

根據此處所述之數個實施例,第一氣體導引裝置及/或第二氣體導引裝置可配置,以在大約平行於材料之蒸發方向230的方向中提供第一處理氣體及/或第二處理氣體的氣流。根據此處所述之數個實施例,第一氣體導引裝置及/或第二氣體導引裝置提供之氣流的定向可根據陶瓷層52之均勻性及成份之至少一者調整。當實行數個實施例時,可確保第一處理氣體及/或第二處理氣體及已蒸發之材料之間更有效率的反應來形成陶瓷層。藉由能夠更準確地控制第一處理氣體及/或第二處理氣體的總量,配置第一氣體導引裝置及/或第二氣體導引裝置以在本質上平行於來自材料源140之材料之蒸發方向230的方向中引導第一反應氣體及/或第二反應氣體可亦有助於較佳地控制塗佈製程。第一處理氣體及/或第二處理氣體係與已蒸發之材料反應。According to several embodiments described herein, the first gas guide and / or the second gas guide may be configured to provide the first process gas and / or in a direction approximately parallel to the evaporation direction 230 of the material. The flow of the second process gas. According to several embodiments described herein, the orientation of the gas flow provided by the first gas guiding device and / or the second gas guiding device may be adjusted according to at least one of the uniformity and composition of the ceramic layer 52. When implementing several embodiments, it is possible to ensure a more efficient reaction between the first processing gas and / or the second processing gas and the evaporated material to form a ceramic layer. By being able to more accurately control the total amount of the first process gas and / or the second process gas, the first gas guide and / or the second gas guide is configured to be substantially parallel to the material from the material source 140 Guiding the first reaction gas and / or the second reaction gas in the direction of the evaporation direction 230 may also help to better control the coating process. The first process gas and / or the second process gas system reacts with the evaporated material.

根據此處所述之數個實施例,電漿210可於本質上垂直於金屬之蒸發方向230的方向中導引。當實行數個實施例時,可避免蒸發金屬之噴濺及/或可減少陶瓷層之銷孔缺陷。According to several embodiments described herein, the plasma 210 may be guided in a direction that is substantially perpendicular to the evaporation direction 230 of the metal. When implementing several embodiments, splashing of evaporated metal can be avoided and / or pin hole defects of the ceramic layer can be reduced.

雖然氧化模組150係繪示在第1至3圖中來與蒸發源102串聯配置,氧化模組150可如上所述為離線配置。舉例來說,氧化腔室可設置在可配置氧化模組150處。氧化腔室可與蒸發腔室103分離。再者,氧化腔室可與處理腔室100分離。此外,處理腔室100可為多腔室系統,包括多個處理腔室,例如是蒸發腔室103及/或氧化腔室。再者,處理腔室100可包括儲存腔室。在儲存腔室中,在具有陶瓷層52沈積於軟質基材111上之再捲的軟質基材111可傳送至氧化腔室之前,具有陶瓷層52沈積於軟質基材111上之再捲之軟質基材111可儲存。Although the oxidation module 150 is shown in FIGS. 1 to 3 to be arranged in series with the evaporation source 102, the oxidation module 150 may be configured offline as described above. For example, the oxidation chamber may be disposed at the configurable oxidation module 150. The oxidation chamber may be separated from the evaporation chamber 103. Furthermore, the oxidation chamber may be separated from the processing chamber 100. In addition, the processing chamber 100 may be a multi-chamber system including a plurality of processing chambers, such as an evaporation chamber 103 and / or an oxidation chamber. Furthermore, the processing chamber 100 may include a storage chamber. In the storage chamber, before the re-rolled soft substrate 111 having the ceramic layer 52 deposited on the soft substrate 111 can be transferred to the oxidation chamber, the re-rolled soft substrate having the ceramic layer 52 deposited on the soft substrate 111 The substrate 111 can be stored.

第4圖繪示用以形成電化學能儲存裝置之元件的陶瓷層的方法500之流程圖。此方法可包括操作510至530之至少一者。根據操作510,材料可蒸發於軟質基材111上或上方。根據操作520,可提供第一處理氣體。第一處理氣體可包括氧。根據操作530,可提供第二處理氣體。第二處理氣體可包括氫。陶瓷層52可藉由至少已蒸發之材料及此至少部份地離子化的處理氣體形成。當實行數個實施例時,可取得具有改善之化學計量的陶瓷層。FIG. 4 is a flowchart of a method 500 for forming a ceramic layer of an element of an electrochemical energy storage device. This method may include operating at least one of 510-530. According to operation 510, the material may be evaporated on or above the soft substrate 111. According to operation 520, a first process gas may be provided. The first processing gas may include oxygen. According to operation 530, a second processing gas may be provided. The second processing gas may include hydrogen. The ceramic layer 52 may be formed from an at least evaporated material and this at least partially ionized processing gas. When implementing several embodiments, ceramic layers with improved stoichiometry can be obtained.

第5圖繪示用以形成電化學能儲存裝置之元件的方法300。根據此處所述實施例,方法300可包括提供310軟質基材,軟質基材具有前側及背側。根據此處所述之數個實施例,提供軟質基材可包括從退捲模組經由蒸發設備之塗佈鼓導引軟質基材至再捲模組。FIG. 5 illustrates a method 300 for forming a component of an electrochemical energy storage device. According to embodiments described herein, the method 300 may include providing 310 a soft substrate having a front side and a back side. According to several embodiments described herein, providing a soft substrate may include guiding the soft substrate from the unwinding module through a coating drum of an evaporation device to the rewinding module.

根據此處所述之數個實施例,此方法可更包括蒸發320材料,特別是在感應加熱坩鍋中蒸發材料。特別是,根據此處所述之數個實施例,可藉由感應加熱坩鍋蒸發鋁及/或矽。在此處之數個實施例中,此方法更包括提供330陶瓷層至軟質基材的前側及背側之至少一者。According to several embodiments described herein, this method may further include evaporating 320 materials, especially evaporating materials in an induction heating crucible. In particular, according to several embodiments described herein, aluminum and / or silicon can be evaporated by an induction heating crucible. In several embodiments herein, the method further includes providing 330 ceramic layers to at least one of the front side and the back side of the soft substrate.

根據此處所述之數個實施例,在感應加熱坩鍋中蒸發金屬可更包括感應340金屬蒸發之蒸發溫度,及根據感應之蒸發溫度來調整提供以在感應加熱坩鍋中蒸發金屬之功率。監控及調整蒸發溫度可改善用以形成電化學能儲存裝置之元件的方法的能量效率,及/或可有助於避免提供至軟質基材之多孔塗層的任何銷孔缺陷。According to several embodiments described herein, evaporating metal in an induction heating crucible may further include inducing the evaporation temperature of 340 metal evaporation, and adjusting the power provided to evaporate metal in the induction heating crucible according to the induction evaporation temperature . Monitoring and adjusting the evaporation temperature can improve the energy efficiency of the method used to form the elements of the electrochemical energy storage device, and / or can help avoid any pinhole defects of the porous coating provided to the soft substrate.

在此處所述之數個實施例中,提供至軟質基材之陶瓷層可具有從大約25 nm至大約300 nm之厚度,例如是舉例為從100 nm至200 nm的厚度。In several embodiments described herein, the ceramic layer provided to the soft substrate may have a thickness from about 25 nm to about 300 nm, for example, a thickness from 100 nm to 200 nm.

根據此處所述之數個實施例,形成電化學能儲存裝置之元件的陶瓷層52可更包括提供350第一處理氣體至已蒸發的金屬,第一處理氣體例如是舉例為氧。第一反應氣體可於本質上平行於金屬之蒸發方向的方向中提供。According to several embodiments described herein, the ceramic layer 52 forming the element of the electrochemical energy storage device may further include providing 350 a first processing gas to the evaporated metal. The first processing gas is, for example, oxygen. The first reaction gas may be provided in a direction substantially parallel to the evaporation direction of the metal.

根據此處所述之數個實施例,形成電化學能儲存裝置之元件的陶瓷層52可更包括提供360第二處理氣體至已蒸發之金屬,第二處理氣體例如是舉例為水蒸汽。第二反應氣體可於本質上平行於金屬之蒸發方向之方向中提供。According to several embodiments described herein, the ceramic layer 52 forming the element of the electrochemical energy storage device may further include providing 360 a second processing gas to the evaporated metal. The second processing gas is, for example, water vapor. The second reaction gas may be provided in a direction substantially parallel to the evaporation direction of the metal.

用以形成電化學能儲存裝置之元件的方法可更包括提供370電漿於已蒸發之金屬及軟質基材之間。電漿可增加軟質基材上之多孔塗層的化學計量及/或密度,及可亦有助於減少多孔塗層之銷孔缺陷。當實行數個實施例時,可改善陶瓷層之化學計量。甚至可實際上取得完全的化學計量之陶瓷層。特別是,根據此處所述之數個實施例,電漿可藉由舉例為電子束裝置或中空陽極沈積電漿源提供。多孔塗層的密度可能受到電漿之密度影響。The method for forming an element of an electrochemical energy storage device may further include providing a 370 plasma between the evaporated metal and the soft substrate. Plasma can increase the stoichiometry and / or density of porous coatings on soft substrates, and can also help reduce pinhole defects in porous coatings. When several embodiments are implemented, the stoichiometry of the ceramic layer can be improved. It is even possible to actually obtain a fully stoichiometric ceramic layer. In particular, according to several embodiments described herein, the plasma may be provided by way of example as an electron beam device or a hollow anode deposition plasma source. The density of the porous coating may be affected by the density of the plasma.

於軟質基材上沈積之多孔層的化學計量可舉例為受到金屬之蒸發率、提供至已蒸發之材料的處理氣體之總量及/或處理氣體之電漿離子化影響。可能影響沈積之多孔層之化學計量的其他方面可為蒸發腔室之內側的真空及周圍大氣之壓力之間的壓差。The stoichiometry of the porous layer deposited on the soft substrate can be exemplified by the evaporation rate of the metal, the total amount of processing gas provided to the evaporated material, and / or plasma ionization of the processing gas. Other aspects that may affect the stoichiometry of the deposited porous layer may be the pressure difference between the vacuum inside the evaporation chamber and the pressure of the surrounding atmosphere.

根據此處所述之數個實施例,用以形成電化學能儲存裝置之方法可包括使陶瓷層52處於380升高溫度之氧化環境。According to several embodiments described herein, the method for forming an electrochemical energy storage device may include subjecting the ceramic layer 52 to an oxidizing environment at an elevated temperature of 380.

此書面說明係使用包括最佳模式之數個例子來揭露本揭露,且亦能夠實施所述之標的,包括製造及使用任何設備或系統及執行任何併入之方法。當數種特定之實施例係已經於前述中揭露時,上述實施例之非互斥之特徵可彼此結合。可專利之範圍係由申請專利範圍定義,且如果例子具有非相異於申請專利範圍之字面語言之結構元件時,或如果例子包括等效結構元件,且等效結構元件與申請專利範圍之字面語言具有非實質差異時,其他例子係意欲包含於申請專利範圍之範疇中。綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。This written description uses several examples, including best practices, to disclose this disclosure, and is also capable of implementing the stated objectives, including manufacturing and using any equipment or system and performing any incorporated methods. When several specific embodiments have been disclosed in the foregoing, the non-exclusive features of the above embodiments may be combined with each other. The patentable scope is defined by the scope of the patent application, and if the example has structural elements that are not different from the literal language of the patent scope, or if the example includes equivalent structural elements, and the equivalent structural element is When the language is non-substantial, other examples are intended to be included in the scope of the patent application. In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

22‧‧‧第一滾軸22‧‧‧The first roller

24‧‧‧第二滾軸24‧‧‧Second Roller

52‧‧‧陶瓷層52‧‧‧ceramic layer

100‧‧‧處理腔室100‧‧‧ treatment chamber

101‧‧‧裝載/卸載腔室101‧‧‧ Loading / unloading chamber

102‧‧‧蒸發源102‧‧‧ evaporation source

103‧‧‧蒸發腔室103‧‧‧ evaporation chamber

107a‧‧‧第一氣體出口107a‧‧‧First gas outlet

107b‧‧‧第二氣體出口107b‧‧‧Second gas outlet

108‧‧‧電漿源108‧‧‧ Plasma source

110‧‧‧退捲模組110‧‧‧Unwinding module

111‧‧‧軟質基材111‧‧‧ soft substrate

112‧‧‧導引滾軸112‧‧‧Guide roller

113、114‧‧‧箭頭113, 114‧‧‧ arrows

120‧‧‧塗佈鼓120‧‧‧ coating drum

130‧‧‧再捲模組130‧‧‧ Rewind Module

140‧‧‧材料源140‧‧‧Material source

150‧‧‧氧化模組150‧‧‧ Oxidation Module

170‧‧‧樞軸裝置170‧‧‧ Pivot device

180‧‧‧張力模組180‧‧‧ tension module

190‧‧‧真空裝置190‧‧‧Vacuum device

210‧‧‧電漿210‧‧‧ Plasma

220‧‧‧氣流控制器220‧‧‧Airflow controller

230‧‧‧蒸發方向230‧‧‧ evaporation direction

240‧‧‧電源240‧‧‧ Power

300、500‧‧‧方法300, 500‧‧‧ methods

310-380‧‧‧步驟310-380‧‧‧step

510-530‧‧‧操作510-530‧‧‧ Operation

P‧‧‧傳送路徑P‧‧‧ Transmission path

為了使本揭露的上述特徵可詳細地瞭解,簡要摘錄於上之本揭露之更特有的說明可參照數個實施例。所附之圖式係有關於本揭露之數個實施例且說明於下文中:In order to make the above features of the present disclosure understandable in detail, a more specific description, which is briefly extracted from the above disclosure, may refer to several embodiments. The attached drawings relate to several embodiments of the disclosure and are described below:

第1圖繪示根據數個實施例之用以形成電化學能儲存裝置之元件的蒸發源的示意圖,電化學能儲存裝置係配置於處理腔室中;FIG. 1 is a schematic diagram of an evaporation source used to form an element of an electrochemical energy storage device according to several embodiments. The electrochemical energy storage device is disposed in a processing chamber;

第2圖繪示根據數個實施例之用以形成電化學能儲存裝置之元件的處理腔室之示意圖;FIG. 2 is a schematic diagram of a processing chamber used to form an element of an electrochemical energy storage device according to several embodiments; FIG.

第3圖繪示第2圖中所示之處理腔室的放大圖;Figure 3 shows an enlarged view of the processing chamber shown in Figure 2;

第4圖繪示根據數個實施例之用以形成電化學能儲存裝置之元件的方法;以及FIG. 4 illustrates a method for forming an element of an electrochemical energy storage device according to several embodiments; and

第5圖繪示根據數個實施例之用以形成電化學能儲存裝置之元件的方法。FIG. 5 illustrates a method for forming an element of an electrochemical energy storage device according to several embodiments.

Claims (20)

一種用以形成一電化學能儲存裝置之一元件之一陶瓷層(52)的方法,包括: 蒸發一材料於一軟質基材(111)上; 提供一第一處理氣體;以及 提供一第二處理氣體,該第二處理氣體包括氫, 該陶瓷層(52)藉由至少已蒸發之該材料、該第一處理氣體及該第二處理氣體形成。A method for forming a ceramic layer (52) of an element of an electrochemical energy storage device, comprising: evaporating a material on a soft substrate (111); providing a first processing gas; and providing a second A processing gas, the second processing gas includes hydrogen, and the ceramic layer (52) is formed by at least the material, the first processing gas, and the second processing gas that have been evaporated. 如申請專利範圍第1項所述之方法,其中該陶瓷層(52)具有一化學成份,包括氧及氫。The method according to item 1 of the patent application scope, wherein the ceramic layer (52) has a chemical composition, including oxygen and hydrogen. 如申請專利範圍第1或2項所述之方法,其中該陶瓷層(52)係為一氫氧化鋁層。The method according to item 1 or 2 of the patent application scope, wherein the ceramic layer (52) is an aluminum hydroxide layer. 如申請專利範圍第1至2項之任一者所述之方法,其中該電化學能儲存裝置係為一鋰電池。The method according to any one of claims 1 to 2, wherein the electrochemical energy storage device is a lithium battery. 如申請專利範圍第1至2項之任一者所述之方法,其中該元件係為一隔離膜。The method according to any one of claims 1 to 2, wherein the element is an isolation film. 如申請專利範圍第1至2項之任一者所述之方法,其中該元件係為一電極。The method according to any one of claims 1 to 2, wherein the element is an electrode. 如申請專利範圍第1至2項之任一者所述之方法,其中該第二處理氣體係為水蒸汽。The method according to any one of claims 1 to 2, wherein the second processing gas system is water vapor. 如申請專利範圍第3項所述之方法,其中該第二處理氣體係為水蒸汽。The method according to item 3 of the scope of patent application, wherein the second processing gas system is water vapor. 如申請專利範圍第1至2項之任一者所述之方法,其中該第一處理氣體及該第二處理氣體係以該第一處理氣體及該第二處理氣體的一比提供,該比係為可調整的,使得該陶瓷層之一化學計量(stoichiometry)可設定。The method according to any one of claims 1 to 2, wherein the first processing gas and the second processing gas system are provided as a ratio of the first processing gas and the second processing gas, and the ratio The system is adjustable so that a stoichiometry of one of the ceramic layers can be set. 如申請專利範圍第3項所述之方法,其中該第一處理氣體及該第二處理氣體係以該第一處理氣體及該第二處理氣體的一比提供,該比係為可調整的,使得該陶瓷層之一化學計量(stoichiometry)可設定。The method according to item 3 of the scope of patent application, wherein the first processing gas and the second processing gas system are provided by a ratio of the first processing gas and the second processing gas, and the ratio is adjustable, Makes one stoichiometry of the ceramic layer settable. 如申請專利範圍第1至2項之任一者所述之方法,更包括: 從一第一滾軸(22)傳送該軟質基材(111)至一第二滾軸(24),該陶瓷層(52)係在該軟質基材(111)從該第一滾軸(22)傳送到該第二滾軸(24)時形成。The method according to any one of claims 1 to 2, further comprising: transferring the soft substrate (111) from a first roller (22) to a second roller (24), the ceramic The layer (52) is formed when the soft substrate (111) is transferred from the first roller (22) to the second roller (24). 一種蒸發源(102),用以形成一電化學能儲存裝置之一元件的一陶瓷層,該蒸發源包括: 一材料源(140),裝配以蒸發一材料;以及 一氣體供應器,具有一第一氣體出口(107a)及一第二氣體出口(107b),該第一氣體出口裝配以提供一第一處理氣體,該第二氣體出口裝配以提供一第二處理氣體,該第二處理氣體包括氫, 該陶瓷層(52)藉由至少已蒸發之該材料、該第一處理氣體及該第二處理氣體形成。An evaporation source (102) for forming a ceramic layer of an element of an electrochemical energy storage device. The evaporation source includes: a material source (140) that is assembled to evaporate a material; and a gas supplier having a A first gas outlet (107a) and a second gas outlet (107b), the first gas outlet is assembled to provide a first processing gas, and the second gas outlet is assembled to provide a second processing gas, the second processing gas Including hydrogen, the ceramic layer (52) is formed by at least the material, the first processing gas, and the second processing gas that have been evaporated. 如申請專利範圍第12項所述之蒸發源(102),更包括: 一氣流控制器(220),裝配以獨立地設定該第一處理氣體之一第一氣體流動速率及該第二處理氣體之一第二氣體流動速率。The evaporation source (102) according to item 12 of the scope of patent application, further comprising: a gas flow controller (220), which is configured to independently set a first gas flow rate of the first processing gas and the second processing gas One of the second gas flow rate. 如申請專利範圍第12或13項所述之蒸發源(102),其中該氣流控制器(220)係裝配,以利用該第一處理氣體及該第二處理氣體的一比提供該第一處理氣體及該第二處理氣體,該比係為可調整的,使得該陶瓷層之一化學計量(stoichiometry)可設定。The evaporation source (102) according to item 12 or 13 of the scope of the patent application, wherein the gas flow controller (220) is assembled to provide the first process by using a ratio of the first process gas and the second process gas. The ratio of the gas and the second processing gas is adjustable, so that a stoichiometry of one of the ceramic layers can be set. 一種處理腔室(100),包括: 如申請專利範圍第14項所述之蒸發源(102);以及 一基材傳送機構,裝配以傳送一軟質基材(111)通過該處理腔室; 其中該蒸發源(102)係相對於該基材傳送機構配置,使得該陶瓷層(52)係形成於該軟質基材(111)上。A processing chamber (100), comprising: an evaporation source (102) as described in item 14 of the scope of patent application; and a substrate transfer mechanism configured to transfer a soft substrate (111) through the processing chamber; wherein The evaporation source (102) is arranged relative to the substrate transfer mechanism so that the ceramic layer (52) is formed on the soft substrate (111). 一種處理腔室(100),包括: 如申請專利範圍第12項所述之蒸發源(102);以及 一基材傳送機構,裝配以傳送一軟質基材(111)通過該處理腔室; 其中該蒸發源(102)係相對於該基材傳送機構配置,使得該陶瓷層(52)係形成於該軟質基材(111)上。A processing chamber (100), comprising: an evaporation source (102) as described in item 12 of the scope of patent application; and a substrate transfer mechanism configured to transfer a soft substrate (111) through the processing chamber; wherein The evaporation source (102) is arranged relative to the substrate transfer mechanism so that the ceramic layer (52) is formed on the soft substrate (111). 一種處理腔室(100),包括: 如申請專利範圍第13項所述之蒸發源(102);以及 一基材傳送機構,裝配以傳送一軟質基材(111)通過該處理腔室; 其中該蒸發源(102)係相對於該基材傳送機構配置,使得該陶瓷層(52)係形成於該軟質基材(111)上。A processing chamber (100), comprising: the evaporation source (102) as described in item 13 of the scope of patent application; and a substrate transfer mechanism configured to transfer a soft substrate (111) through the processing chamber; wherein The evaporation source (102) is arranged relative to the substrate transfer mechanism so that the ceramic layer (52) is formed on the soft substrate (111). 如申請專利範圍第15項所述之處理腔室(100),其中該基材傳送機構包括一第一滾軸(22)及一第二滾軸(24),裝配以從該第一滾軸(22)沿著一傳送路徑(P)傳送該軟質基材(111)至該第二滾軸(24),該蒸發源(102)沿著該傳送路徑(P)配置。The processing chamber (100) according to item 15 of the scope of patent application, wherein the substrate conveying mechanism includes a first roller (22) and a second roller (24), and is assembled from the first roller (22) The soft substrate (111) is conveyed to the second roller (24) along a conveying path (P), and the evaporation source (102) is arranged along the conveying path (P). 如申請專利範圍第18項所述之處理腔室(100),其中該處理腔室(100)係為一真空處理腔室。The processing chamber (100) according to item 18 of the scope of patent application, wherein the processing chamber (100) is a vacuum processing chamber. 如申請專利範圍第15項所述之處理腔室(100),其中該處理腔室(100)係為一真空處理腔室。The processing chamber (100) according to item 15 of the scope of patent application, wherein the processing chamber (100) is a vacuum processing chamber.
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