TW201919746A - Filter element for wafer processing assembly - Google Patents

Filter element for wafer processing assembly Download PDF

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Publication number
TW201919746A
TW201919746A TW107128926A TW107128926A TW201919746A TW 201919746 A TW201919746 A TW 201919746A TW 107128926 A TW107128926 A TW 107128926A TW 107128926 A TW107128926 A TW 107128926A TW 201919746 A TW201919746 A TW 201919746A
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Taiwan
Prior art keywords
filter element
filter
wafer processing
ratio
processing assembly
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TW107128926A
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Chinese (zh)
Inventor
瑪利亞 費瑞拉
約瑟夫 藍柏
安卡特 莫迪
大衛 格雷特
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美商維克儀器公司
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Publication of TW201919746A publication Critical patent/TW201919746A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D46/00Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/52Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D39/00Filtering material for liquid or gaseous fluids
    • B01D39/14Other self-supporting filtering material ; Other filtering material
    • B01D39/16Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres
    • B01D39/1692Other shaped material, e.g. perforated or porous sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D39/00Filtering material for liquid or gaseous fluids
    • B01D39/14Other self-supporting filtering material ; Other filtering material
    • B01D39/16Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres
    • B01D39/1607Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous
    • B01D39/1623Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous of synthetic origin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D46/00Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/52Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material
    • B01D46/521Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material using folded, pleated material
    • B01D46/522Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material using folded, pleated material with specific folds, e.g. having different lengths
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D39/00Filtering material for liquid or gaseous fluids
    • B01D39/14Other self-supporting filtering material ; Other filtering material
    • B01D39/16Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres
    • B01D39/18Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being cellulose or derivatives thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D46/00Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/02Particle separators, e.g. dust precipitators, having hollow filters made of flexible material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D46/00Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/52Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material
    • B01D46/521Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material using folded, pleated material
    • B01D46/525Particle separators, e.g. dust precipitators, using filters embodying folded corrugated or wound sheet material using folded, pleated material which comprises flutes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • H01J37/32844Treating effluent gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2239/00Aspects relating to filtering material for liquid or gaseous fluids
    • B01D2239/02Types of fibres, filaments or particles, self-supporting or supported materials
    • B01D2239/025Types of fibres, filaments or particles, self-supporting or supported materials comprising nanofibres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2239/00Aspects relating to filtering material for liquid or gaseous fluids
    • B01D2239/12Special parameters characterising the filtering material
    • B01D2239/125Size distribution
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02CCAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00Capture or disposal of greenhouse gases
    • Y02C20/30Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Abstract

Filter elements for gaseous fluid (e.g., air) filtration for wafer processing systems. The filter elements have a pleat ratio of no greater than 7, where the pleat ratio is the number of pleats per mean diameter of the filter. By having a pleat ratio no greater than 7, and in some implementations also greater than 5, the filter is optimized for wafer processing systems and methods. This pleat ratio optimizes the spacing between pleats, thus balancing filtration media area against effective area, such as what might be lost due to contaminant bridging.

Description

晶圓處理總成之過濾元件Filter element for wafer processing assembly

過濾元件長期用於自流體物料流移除顆粒材料,該等流體物料流包括如空氣之氣態流體物料流。取決於特定實施及所需的過濾元件之效能,過濾元件之設計、組態及/或構造將不同。Filter elements have long been used to remove particulate material from fluid streams, which include gaseous fluid streams such as air. The design, configuration, and / or construction of the filter element will vary depending on the particular implementation and the performance of the filter element required.

本文中所描述之技術係關於用於晶圓處理系統之氣態流體(例如空氣)過濾的過濾元件。該等過濾元件具有不大於7之褶襇比,其中該褶襇比為褶狀部分數目/過濾器之平均直徑。The technology described herein relates to a filter element for filtering a gaseous fluid (eg, air) in a wafer processing system. The filter elements have a pleating ratio of not more than 7, where the pleating ratio is the number of pleated portions / average diameter of the filter.

本文中所描述之一個特定實施為氣態流體過濾元件,其具有自第一端延伸至與第一端相對之第二端的過濾介質之延伸部分,該過濾介質形成環繞過濾元件周向性地延伸的複數個褶狀部分,該複數個褶狀部分界定內徑及外徑,其中該過濾元件具有不大於7,在其他實施中不大於6.5之褶襇比。在一些實施中,褶襇比至少為5。One particular implementation described herein is a gaseous fluid filter element having an extension of a filter medium extending from a first end to a second end opposite the first end, the filter medium forming a circumferentially extending filter element. A plurality of pleated portions, the plurality of pleated portions defining an inner diameter and an outer diameter, wherein the filter element has a pleating ratio of no more than 7 and in other implementations no more than 6.5. In some implementations, the pleating ratio is at least 5.

本文中所描述之另一特定實施為其中具有過濾元件之晶圓處理總成,該過濾元件用於過濾來自泵上游之處理腔室的氣態排氣。過濾元件包含自第一端延伸至與第一端相對之第二端的過濾介質之延伸部分,該過濾介質形成環繞過濾元件周向性地延伸的複數個褶狀部分,該複數個褶狀部分界定內徑及外徑,其中該過濾元件具有不大於7之褶襇比。Another specific implementation described herein is a wafer processing assembly having a filter element therein for filtering gaseous exhaust gas from a processing chamber upstream of the pump. The filter element includes an extended portion of a filter medium extending from a first end to a second end opposite the first end, the filter medium forming a plurality of pleated portions extending circumferentially around the filter element, the plurality of pleated portions defining Inner diameter and outer diameter, wherein the filter element has a pleating ratio of not more than 7.

本文中所描述之又一特定實施為清潔晶圓處理總成中排氣之方法。該方法包括使來自晶圓處理總成之處理腔室之氛圍穿過具有不大於7之褶襇比之過濾元件以形成過濾排氣,以及泵送過濾排氣。Another specific implementation described herein is a method for cleaning exhaust in a wafer processing assembly. The method includes passing an atmosphere from a processing chamber of a wafer processing assembly through a filter element having a pleating ratio of no more than 7 to form filtered exhaust, and pumping the filtered exhaust.

此等及各種其他實施、特徵以及優勢將自閱讀以下詳細描述顯而易見。These and various other implementations, features, and advantages will be apparent from reading the following detailed description.

提供此發明內容來以簡化形式引入下文在實施方式中進一步描述之概念選擇。本發明內容並非意欲鑑別所要求保護的主題的關鍵特徵或基本特徵,亦並非意欲用於限制所要求保護的主題之範疇。This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the embodiments. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

本說明書係關於用於晶圓處理總成及/或系統的流體過濾器,特定言之氣體(例如空氣)過濾器。晶圓處理系統可以係例如化學氣相沈積(chemical vapor deposition;CVD)系統、金屬有機化學氣相沈積(metal organic CVD;MOCVD)系統、離子束沈積系統、離子束濺鍍系統、化學蝕刻系統、離子研磨系統、物理氣相沈積(physical vapor deposition;PVD)系統、類金剛石碳(diamond-like carbon;DLC)沈積系統、或其他處理系統。This specification relates to fluid filters for wafer processing assemblies and / or systems, specifically gas (such as air) filters. The wafer processing system may be, for example, a chemical vapor deposition (CVD) system, a metal organic chemical vapor deposition (MOCVD) system, an ion beam deposition system, an ion beam sputtering system, a chemical etching system, Ion milling system, physical vapor deposition (PVD) system, diamond-like carbon (DLC) deposition system, or other processing systems.

在以下描述中,參看附圖,附圖形成描述之一部分,且其中藉助於說明具體實施來展示。該描述提供額外的具體實施。應理解,在不脫離本發明之範疇或精神之情況下,涵蓋並且可以作出其他實施。因此,以下詳細描述不應在限制性意義上理解。雖然本發明不限於此,但將藉由論述下文提供之實例來獲得對本發明之各個態樣的理解。In the following description, reference is made to the accompanying drawings, which form a part of the description and are shown in detail by way of illustration. This description provides additional implementations. It should be understood that other implementations are covered and can be made without departing from the scope or spirit of the invention. Therefore, the following detailed description should not be interpreted in a limiting sense. Although the invention is not limited thereto, an understanding of various aspects of the invention will be obtained by discussing the examples provided below.

如本文中所使用,除非內容另外明確規定,否則單數形式「一」及「該」涵蓋具有複數個指代物之實施例。除非內容另外明確規定,否則如本說明書及所附申請專利範圍中所使用,術語「或」通常在其意義上用來包括“及/或”。As used herein, the singular forms "a" and "the" cover embodiments having plural referents unless the content clearly dictates otherwise. Unless the content clearly specifies otherwise, as used in this specification and the scope of the accompanying patent application, the term "or" is generally used in its sense to include "and / or".

空間相關術語,包括但不限於「下部」、「上部」、「底下」、「下方」、「上方」、「頂部」等(若在本文中使用)用於使描述易於描繪元件之間的空間關係。此類空間相關術語涵蓋除了圖式及本文中所描繪之特定定向之外的裝置之不同定向。舉例而言,若圖式中描繪之結構顛倒或翻轉,則先前描述為位於其他元件下方或底下的部分隨後將位於彼等其他元件上方(above/over)。Space-related terms, including but not limited to "lower", "upper", "bottom", "below", "above", "top", etc. (if used herein) are used to make the description easy to depict the space between elements relationship. Such spatially related terms encompass different orientations of the device in addition to the drawings and the specific orientations depicted herein. For example, if a structure depicted in a drawing is reversed or turned over, portions previously described as being under or underneath other elements would then be above / over them.

在一些例項中,圖式中之附圖標記可具有由大寫字母組成的相關子標籤以表示多個相似組件中之一者。當在未指定子標籤之情況下參考一附圖標記時,該附圖標記指代所有此類多個相似組件。In some examples, reference numerals in the drawings may have associated sub-tags composed of capital letters to represent one of a plurality of similar components. When a reference number is referred to without specifying a sub-tag, the reference number refers to all such multiple similar components.

圖1以極其基礎之方式說明晶圓處理系統100,如CVD系統。特定系統100對於本發明之過濾器並非至關重要的,而是提供為其中可以併有本發明之過濾器的通用晶圓處理系統。特定系統100僅展示某些零件,且一般經展示不具有特殊設計;應瞭解,實際的CVD系統或其他晶圓處理系統具有顯著更多的特徵存在。FIG. 1 illustrates a wafer processing system 100, such as a CVD system, in an extremely basic manner. The specific system 100 is not critical to the filter of the present invention, but is provided as a general-purpose wafer processing system in which the filter of the present invention can be incorporated. The specific system 100 shows only certain parts and is generally not shown with a special design; it should be understood that actual CVD systems or other wafer processing systems have significantly more features present.

晶圓處理系統100具有至少由第一部分104及第二部分106形成之腔室102,在該腔室102中安置晶圓(未說明)以供處理。在特定實施中,腔室102具有圓柱體積,該圓柱體積由與環形第二部分106配合之圓柱形第一部分104形成,其中密封件(未圖示)位於其間。腔室102中之處理可以係例如用於在晶圓上沈積金屬氧化物膜。展示封蓋108在第二部分106上方。呈現中心轂110穿過封蓋108延伸至第二部分106。The wafer processing system 100 has a chamber 102 formed by at least a first portion 104 and a second portion 106, and a wafer (not illustrated) is disposed in the chamber 102 for processing. In a specific implementation, the chamber 102 has a cylindrical volume formed by a cylindrical first portion 104 mating with the annular second portion 106 with a seal (not shown) in between. The processing in the chamber 102 may be, for example, used to deposit a metal oxide film on a wafer. The display cover 108 is above the second portion 106. The rendering center hub 110 extends through the cover 108 to the second portion 106.

基板支撐112存在於腔室102內以用於在處理期間在其上或其中安置晶圓。儘管未展示,但系統100將包括進入腔室102之入口以用於將晶圓移入及移出腔室102。A substrate support 112 is present within the chamber 102 for placing a wafer thereon or therein during processing. Although not shown, the system 100 will include an entrance into the chamber 102 for moving wafers into and out of the chamber 102.

取決於特定處理系統,系統100亦可以包括用於在腔室102上抽取真空之抽氣源114,及用於向腔室102提供(例如反應性)氣體之氣體進料口116、118。系統100亦可以包括排氣口120以維持腔室102中所需之氛圍品質及/或另外維持腔室102內之循環。腔室102中之氣態氛圍(例如空氣)經由排氣口120離開腔室102且在一些實施中排放至外部大氣。然而,為抑制處理材料逸出且污染外部大氣,至少一個過濾元件125與腔室102及排氣口120流體連通且位於兩者之間。過濾元件125經組態以在排氣流被排放之前至少自其移除顆粒(固體)污染物。在此特定圖示中,過濾元件125位於流體地連接至腔室102之分離腔室122中,但在其他實施中,過濾元件125可實體地安置於腔室102中。在已藉由過濾元件125清潔排氣流之後,可以排放排氣流。Depending on the particular processing system, the system 100 may also include a suction source 114 for drawing a vacuum on the chamber 102, and gas feed ports 116, 118 for supplying (e.g., reactive) gas to the chamber 102. The system 100 may also include an exhaust port 120 to maintain the desired atmosphere quality in the chamber 102 and / or to maintain circulation within the chamber 102. A gaseous atmosphere (eg, air) in the chamber 102 exits the chamber 102 via the exhaust port 120 and is discharged to the outside atmosphere in some implementations. However, in order to prevent the processing material from escaping and polluting the external atmosphere, at least one filter element 125 is in fluid communication with the chamber 102 and the exhaust port 120 and is located therebetween. The filter element 125 is configured to remove particulate (solid) pollutants therefrom at least before the exhaust stream is discharged. In this particular illustration, the filter element 125 is located in a separation chamber 122 fluidly connected to the chamber 102, but in other implementations, the filter element 125 may be physically disposed in the chamber 102. After the exhaust flow has been cleaned by the filter element 125, the exhaust flow may be discharged.

在一些實施中,抽氣源114及排氣口120組合,使得自腔室102移除以獲得真空之氛圍排放至大氣。In some implementations, the extraction source 114 and the exhaust port 120 are combined so that the atmosphere removed from the chamber 102 to obtain a vacuum is discharged to the atmosphere.

對於任一情況,過濾元件125均安置於腔室102內部與用於自腔室移除空氣之泵(例如真空泵)之間(泵未在圖1中展示)。在泵上游具有過濾元件125除了在排放之前移除污染物之外亦保護泵免於污染物污染且提高泵之工作壽命。In either case, the filter element 125 is disposed between the interior of the chamber 102 and a pump (such as a vacuum pump) for removing air from the chamber (the pump is not shown in FIG. 1). Having a filter element 125 upstream of the pump, in addition to removing pollutants before discharging, also protects the pump from contamination and increases the pump's operating life.

圖2說明用於自氣態流體流移除污染物之實例過濾元件200。過濾元件200具有形成為複數個褶狀部分202之過濾介質,各褶狀部分202具有尖端204及基底206。各褶狀部分202通常自過濾元件200之一端延伸至另一端,使得褶狀部分202延伸過濾元件200之整個長度。過濾元件200具有如圖2所示之環形橫截面,其具有由褶狀部分202之基底206界定之內徑DI 及由褶狀部分202之尖端204界定之外徑DO 。過濾元件200可以為柱體、錐形柱體(截頭圓錐)、圓錐體或具有不規則形狀,該不規則形狀具有環形橫截面。具有環形橫截面之過濾元件常常被稱為「管狀」過濾元件。FIG. 2 illustrates an example filter element 200 for removing contaminants from a gaseous fluid stream. The filter element 200 has a filter medium formed into a plurality of pleated portions 202, and each of the pleated portions 202 has a tip 204 and a base 206. Each pleated portion 202 generally extends from one end to the other end of the filter element 200 such that the pleated portion 202 extends the entire length of the filter element 200. The filter element 200 has an annular cross-section as shown in FIG. 2 having an inner diameter D I defined by the base 206 of the pleated portion 202 and an outer diameter D O defined by the tip 204 of the pleated portion 202. The filter element 200 may be a cylinder, a conical cylinder (a truncated cone), a cone, or have an irregular shape having an annular cross section. Filter elements with a circular cross section are often referred to as "tubular" filter elements.

過濾元件200具有褶襇比,其為過濾元件200之給定體積提供最大有用截面積。褶襇比定義為褶狀部分數目/過濾器之平均直徑;亦即褶狀部分數目除以(DI + DO )/2。作為實例,具有102個褶狀部分(褶狀部分高度為2.8125吋)的DI 為9.0吋、DO 為14.625吋之過濾元件之褶襇比為8.63,而具有64個褶狀部分的相同尺寸之過濾器之褶襇比為5.42。作為另一實例,具有70個褶狀部分(褶狀部分高度為1.875吋)的DI 為6.0吋、DO 為9.75吋之過濾元件之褶襇比為8.89,而具有48個褶狀部分的相同尺寸之過濾器之褶襇比為6.10。另一實例具有褶襇比為8.83之過濾元件,其褶襇比降低至5.42之比值。The filter element 200 has a pleating ratio that provides a maximum useful cross-sectional area for a given volume of the filter element 200. The pleating ratio is defined as the number of pleated portions / average diameter of the filter; that is, the number of pleated portions divided by (D I + D O ) / 2. As an example, a filter element having 102 pleated portions (the height of the pleated portion is 2.8125 inches) with a D I of 9.0 inches and a D O of 14.625 inches has a pleated ratio of 8.63, and the same size with 64 pleated portions The pleating ratio of the filter was 5.42. As another example, having a D 70 pleats-like portion (pleated part of the height of 1.875 inches) to 6.0 inches I, D O 9.75 inch pleats of the pleated filter element ratio of 8.89, and having a pleated portion 48 The pleating ratio of filters of the same size is 6.10. Another example has a filter element with a pleating ratio of 8.83, whose pleating ratio is reduced to a ratio of 5.42.

過濾介質可以為例如紙張、其他纖維素材料、合成材料或其任何組合。過濾介質可以為穿孔墊或由聚合或纖維素纖維形成之纖維墊或網。過濾介質可以按任何數目的方式處理以提高其移除微小顆粒之效率;例如可使用經靜電處理的介質,亦可使用纖維素或合成介質或其組合,其具有尺寸為微米或亞微米(纖維直徑)級之一或多個細粒纖維層,或熟習此項技術者已知的其他類型的介質。The filter medium may be, for example, paper, other cellulosic materials, synthetic materials, or any combination thereof. Filter media can be perforated pads or fibrous pads or meshes formed from polymeric or cellulose fibers. Filter media can be processed in any number of ways to increase its efficiency in removing small particles; for example, electrostatically treated media can be used, or cellulose or synthetic media, or a combination thereof, having a size of micrometers or submicrometers (fibers Diameter) or one or more layers of fine-grained fibers, or other types of media known to those skilled in the art.

氣態氛圍(例如空氣)流過過濾介質且過濾元件200在此實施中徑向向內穿過褶狀介質,鑑別為空氣流動路徑210。過大從而無法穿過過濾介質之顆粒由介質捕獲在褶狀部分202之表面上。過濾空氣自過濾元件200之內部容積離開。A gaseous atmosphere (such as air) flows through the filter medium and the filter element 200 passes radially through the pleated medium in this implementation, identifying as an air flow path 210. Particles that are too large to pass through the filter medium are captured by the medium on the surface of the pleated portion 202. The filtered air exits from the internal volume of the filter element 200.

褶型過濾元件,如過濾元件200可用於過濾來自晶圓處理系統(例如MOCVD)之排氣流之微粒污染物。過濾元件200可以根據待自所過濾的流體(例如氣體)物料流移除的污染物類型來設計。晶圓處理系統(例如MOCVD)之排氣流中的實例微粒污染物為晶圓處理之副產物GaN粉塵。可以藉由過濾元件200自氣態流體物料流移除之其他污染物包括粉塵、污垢、花粉、金屬晶片及/或刨屑等。某些顆粒可能由於顆粒之物理顆粒及分子結構對晶圓處理系統之運行造成雙重傷害。Pleated filter elements, such as filter element 200, can be used to filter particulate contaminants from an exhaust stream from a wafer processing system (e.g., MOCVD). The filter element 200 may be designed based on the type of contaminants to be removed from the filtered fluid (eg, gas) stream. Example particulate contaminants in the exhaust stream of a wafer processing system (eg, MOCVD) are GaN dust, a by-product of wafer processing. Other contaminants that can be removed from the gaseous fluid stream by the filter element 200 include dust, dirt, pollen, metal wafers and / or shavings, and the like. Some particles may cause double damage to the operation of the wafer processing system due to the physical particles and molecular structure of the particles.

圖3說明過濾元件構造300之實例定向,在特定實施中,三個單獨的過濾元件300A、300B、300C端對端安置。過濾元件構造300具有第一端302及第二端304;在此特定實施中,第一端302為「敞口」端且第二端304為封閉端。儘管第一端302被稱為「敞口」端,但末端302之完整表面可能並不敞開,而是僅留足夠量以允許空氣流穿過末端302。舉例而言,敞口端302可具有中心孔口。形成複數個褶狀部分308之過濾介質306自第一端302延伸至第二端304。過濾元件構造300具有由單獨的過濾元件300、第一端302及第二端304界定之內部容積。FIG. 3 illustrates an example orientation of the filter element construction 300. In a particular implementation, three separate filter elements 300A, 300B, 300C are placed end-to-end. The filter element structure 300 has a first end 302 and a second end 304; in this particular implementation, the first end 302 is an "open" end and the second end 304 is a closed end. Although the first end 302 is referred to as the "open" end, the entire surface of the end 302 may not be open, but only a sufficient amount to allow air flow through the end 302. For example, the open end 302 may have a central orifice. A filter medium 306 forming a plurality of pleated portions 308 extends from the first end 302 to the second end 304. The filter element structure 300 has an internal volume defined by a separate filter element 300, a first end 302, and a second end 304.

當安置於晶圓處理總成(例如圖1之總成100)中時,過濾器構造300可沿水平定向安置,如圖3所示及圖1示意性地展示。氣態流體(例如空氣)流藉由穿過介質進入內部容積來進入內部容積,且經由敞口端302離開內部容積。展示為空氣流動路徑310之入射空氣及出射空氣展示於圖3中;流動路徑310徑向向內穿過過濾介質306進入過濾器之內部容積且經由敞口端302流出。When placed in a wafer processing assembly (eg, assembly 100 of FIG. 1), the filter structure 300 may be placed in a horizontal orientation, as shown in FIG. 3 and schematically shown in FIG. 1. A gaseous fluid (such as air) enters the internal volume by passing through the medium into the internal volume, and exits the internal volume via the open end 302. The incoming air and outgoing air shown as an air flow path 310 are shown in FIG. 3; the flow path 310 passes radially through the filter medium 306 into the internal volume of the filter and flows out through the open end 302.

根據本發明,過濾元件200、300具有不超過7之褶襇比。如上文參看圖2所解釋,褶襇比為褶狀部分數目/過濾器之平均直徑,或褶狀部分數目除以(DI + DO )/2。上文亦參看圖2提供褶狀過濾器組態及其褶襇比之若干實例。在一些實施中,褶襇比不大於6.9或6.8或6.75或6.7或6.6或6.5或6.4或6.3或6.25或6.2或6.1或甚至不大於6。在其他實施中,褶襇比不大於5.9或5.8或5.75或5.7或5.6或5.5或5.4或5.3或5.2或5.25或5.1或甚至不大於5。一般而言,褶襇比至少為2,且在一些實施中至少為2.5,在其他實施中至少為3,在其他實施中至少為3.5,且在其他實施中至少為4或至少為5。在一些實施中,褶襇比在5與6.5之間,在其他實施中在5與6之間。According to the present invention, the filter elements 200, 300 have a pleating ratio of not more than 7. As explained above with reference to FIG. 2, the pleating ratio is the number of pleated portions / average diameter of the filter, or the number of pleated portions divided by (D I + D O ) / 2. Some examples of pleated filter configurations and pleated ratios are also provided above with reference to FIG. 2. In some implementations, the pleating ratio is not greater than 6.9 or 6.8 or 6.75 or 6.7 or 6.6 or 6.5 or 6.4 or 6.3 or 6.25 or 6.2 or 6.1 or even not greater than 6. In other implementations, the pleating ratio is not greater than 5.9 or 5.8 or 5.75 or 5.7 or 5.6 or 5.5 or 5.4 or 5.3 or 5.2 or 5.25 or 5.1 or even not more than 5. Generally speaking, the pleating ratio is at least 2 and at least 2.5 in some implementations, at least 3 in other implementations, at least 3.5 in other implementations, and at least 4 or at least 5 in other implementations. In some implementations, the pleat ratio is between 5 and 6.5, and in other implementations between 5 and 6.

過濾元件中之褶狀部分相比於無褶過濾器增加過濾面積,且褶狀部分進而提高過濾能力且因此增加壽命。然而,過多的褶狀部分實際會降低過濾器壽命,儘管增加過濾介質面積。過少的褶狀部分(極端情況下接近簡單柱體)將具有極小的面積及壽命。褶襇比界定將過濾器壽命最大化之這一甜點(sweet spot)。The pleated portion in the filter element increases the filtering area compared to a non-pleated filter, and the pleated portion further improves the filtering ability and therefore the life. However, excessive pleated portions actually reduce filter life despite increasing filter media area. Too few pleated portions (close to simple cylinders in extreme cases) will have extremely small area and lifetime. The pleating ratio defines this sweet spot that maximizes the life of the filter.

褶襇比定量給定體積之最佳(或接近於最佳)的有用過濾器截面積。褶襇比可以藉由調節褶狀部分數目、內徑(DI )及外徑(DO )中之任一者或全部來調節。為降低褶襇比,可以減少褶狀部分數目,可以增大內徑(DI ),且/或可以增大外徑(DO )。因為系統中之過濾元件(例如系統100中之過濾元件125)具有一定形狀因素(例如體積、長度、寬度等),所以可以容易地調節褶狀部分數目以影響褶襇比。某一過濾器所需之褶襇比可基於所過濾之材料類型、所過濾之氣態流體及在某一程度上所使用之過濾介質類型而不同。The pleating ratio quantifies the optimal (or near optimal) useful filter cross-sectional area for a given volume. The pleating ratio can be adjusted by adjusting any or all of the number of pleated portions, the inner diameter (D I ), and the outer diameter (D O ). To reduce the pleating ratio, the number of pleated portions can be reduced, the inner diameter (D I ) can be increased, and / or the outer diameter (D O ) can be increased. Because the filter element in the system (such as the filter element 125 in the system 100) has a certain shape factor (such as volume, length, width, etc.), the number of pleated portions can be easily adjusted to affect the pleating ratio. The pleating ratio required for a certain filter can vary based on the type of material being filtered, the gaseous fluid being filtered, and the type of filtering media used to some extent.

取決於特定應用,過濾器之平均直徑(亦即(DI + DO )/2)至少為6吋,在一些實施中至少為7吋。平均直徑之其他合適實例為8吋、9吋、10吋、11吋、12吋。過濾元件之平均直徑接近表示過濾器之2維過濾面積,其不同於褶狀部分高度,該褶狀部分高度不占過濾器之尺寸(內徑(DI )及外徑(DO ))。平均直徑與褶狀部分高度之間的這一細微差異為褶襇比的關鍵之一,褶襇比為併入過濾器面積及褶狀部分間距的唯一地表徵過濾器的優值。Depending on the specific application, the average diameter of the filter (ie (D I + D O ) / 2) is at least 6 inches, and in some implementations at least 7 inches. Other suitable examples of average diameters are 8 inches, 9 inches, 10 inches, 11 inches, and 12 inches. The average diameter of the filter element is close to the two-dimensional filtering area of the filter, which is different from the height of the pleated portion, which does not occupy the size of the filter (inner diameter (D I ) and outer diameter (D O )). This slight difference between the average diameter and the height of the pleated portion is one of the keys to the pleated ratio. The pleated ratio is a figure of merit unique to the filter that incorporates the area of the filter and the pitch of the pleated portion.

內徑與外徑的差異可以為至少1吋,在一些實施中至少2吋且在其他實施中至少3吋。過短的褶狀部分無法提供足夠的過濾介質表面積,從而降低過濾元件之效果。The difference between the inner diameter and the outer diameter may be at least 1 inch, in some implementations at least 2 inches, and in other implementations at least 3 inches. Too short pleated portions cannot provide sufficient surface area of the filter medium, thereby reducing the effectiveness of the filter element.

內徑與外徑的差異為不大於6吋至9吋,在一些實施中不大於約4吋。過高的褶狀部分可能傾向於凹陷或摺疊,從而降低過濾元件之效果。另外,較大的褶狀部分高度增大外徑DO ,這直接影響過濾元件之形狀因素,該形狀因素與系統中可用於接納過濾元件之體積、過濾元件之封裝及儲存等有關。The difference between the inner and outer diameters is no more than 6 inches to 9 inches, and in some implementations no more than about 4 inches. Excessively high pleated portions may tend to sink or fold, reducing the effectiveness of the filter element. In addition, the height of the larger pleated portion increases the outer diameter D O , which directly affects the shape factor of the filter element, which is related to the volume that can be used to receive the filter element in the system, the packaging and storage of the filter element, and the like.

在一些實施中,可滲透支撐(例如篩網)可以存在於褶狀部分之外表面及/或內表面上(尤其對於較大褶狀部分)以支撐褶狀部分且/或保護介質。In some implementations, a permeable support (such as a screen) may be present on the outer and / or inner surface of the pleated portion (especially for larger pleated portions) to support the pleated portion and / or protect the medium.

褶狀部分數目將很大程度上取決於過濾器之周長(或過濾器之外徑DO ),但通常將為至少30個褶狀部分或至少40個褶狀部分或至少50個褶狀部分,及/或不超過約90個褶狀部分或不超過80個褶狀部分。其他實例包括35-75個褶狀部分、40-80個褶狀部分、40-60個褶狀部分、45-65個褶狀部分。The number of pleated sections will largely depend on the circumference of the filter (or the outer diameter D O of the filter), but will generally be at least 30 pleated sections or at least 40 pleated sections or at least 50 pleated Portions, and / or no more than about 90 pleated portions or no more than 80 pleated portions. Other examples include 35-75 pleated portions, 40-80 pleated portions, 40-60 pleated portions, and 45-65 pleated portions.

褶狀部分數目,尤其下限係取決於穿過過濾元件之氣態流體流及可允許的壓降。過濾元件必須具有足夠的面積以使所需氣體在最大壓降下歷經一定時間段自其穿過,該最大壓降為應用特定的且藉由分析排氣流及捕捉的顆粒量來判定。具有更多的褶狀部分及因此更大的介質面積延長過濾器更換之間的時間,然而,若超過褶襇比,則額外的面積實際可能縮短過濾元件壽命。The number of pleats, especially the lower limit, depends on the gaseous fluid flow and the allowable pressure drop across the filter element. The filter element must have sufficient area to allow the required gas to pass through it over a period of time at a maximum pressure drop that is application specific and determined by analyzing the exhaust flow and the amount of particles captured. Having more pleated portions and therefore a larger media area extends the time between filter replacements, however, if the pleating ratio is exceeded, the additional area may actually shorten the life of the filter element.

藉由在維持相同平均直徑的同時減少褶狀部分數目,總介質面積減小。然而,儘管總介質面積減小,但有效介質面積增大。By reducing the number of pleated portions while maintaining the same average diameter, the total medium area is reduced. However, although the total medium area is reduced, the effective medium area is increased.

在將較小的介質表面積用於相同量的流體(例如氣體)物料流時,微粒污染物具有將其捕獲之較小面積,且因此導致更多的污染物堆積在介質上。意外地發現具有不大於7之褶襇比與具有相同平均直徑及更多的褶狀部分數目(亦即較高的褶襇比)的過濾器相比,降低過濾器中之壓降(DP)的提高速率(例如過濾元件「堵塞」且變得阻塞之速度變慢),而非提高壓降。具有低壓降或較慢的壓降提高速率延長過濾器之效率及生產率。When smaller media surface areas are used for the same amount of fluid (eg, gas) material flow, particulate contaminants have a smaller area to capture them, and therefore cause more contaminants to accumulate on the media. It was unexpectedly found that the pressure drop (DP) in the filter was reduced compared to a filter having a pleating ratio of not more than 7 compared to a filter having the same average diameter and more number of pleated portions (that is, a higher pleating ratio). Instead of increasing the pressure drop (for example, the filter element "clogs" and becomes slower). Low pressure drop or slower pressure drop increase rate to extend the efficiency and productivity of the filter.

過濾器中之壓降(DP)可用於量測過濾器效能且觸發所保護裝備(例如MOCVD或其他晶圓處理系統)之維護週期。隨著過濾元件捕獲污染物,流過過濾元件且因此流過整個系統之流量隨著過濾器中壓降之提高而逐漸減少。隨著壓降提高,泵必須以更大功率運行以移動相同體積之空氣。對於典型的過濾元件組態而言,降低過濾水準(例如,例如藉由改變介質或其處理來增加通過過濾器之顆粒之尺寸及/或數目)可將低DP維持較長時間,從而提供較長的過濾器壽命及維護週期,但繼而將由於穿過過濾器至泵的顆粒之尺寸及/或量而顯著降低真空泵壽命。較高的過濾水準可輕易實現從而為泵提供較佳的保護,但需要更加頻繁的過濾器更換及額外的系統維護。因此,在不犧牲過濾水準之情況下降低DP為理想的。意外地發現具有不大於7之褶襇比在不需要降低過濾水準之情況下降低過濾器中壓降(DP)的提高。The pressure drop (DP) in the filter can be used to measure the performance of the filter and trigger the maintenance cycle of the protected equipment (such as MOCVD or other wafer processing systems). As the filter element captures contaminants, the flow through the filter element and therefore through the entire system gradually decreases as the pressure drop in the filter increases. As the pressure drop increases, the pump must run with more power to move the same volume of air. For a typical filter element configuration, reducing the level of filtration (e.g., increasing the size and / or number of particles passing through the filter by changing the medium or its treatment) can maintain low DP for a longer period of time, providing Long filter life and maintenance intervals, but in turn will significantly reduce vacuum pump life due to the size and / or amount of particles passing through the filter to the pump. Higher filtration levels can be easily achieved to provide better protection for the pump, but require more frequent filter changes and additional system maintenance. Therefore, it is desirable to reduce DP without sacrificing the level of filtration. It has been unexpectedly found that having a pleating ratio of no more than 7 reduces the increase in pressure drop (DP) in the filter without the need to reduce the level of filtration.

實際上,藉由允許使用可自氣態流體物料流移除較小尺寸之顆粒之較細介質及/或藉由延長過濾元件之壽命,意外地發現具有不大於7之褶襇比不僅降低過濾器中壓降(DP)的提高速率而且提高可用的過濾水準。申請人認為此為「褶襇比」作用之直接效果;使用最佳褶襇比,過濾元件由於褶狀部分之間的最佳間距具有可用的更有效介質。在過濾過程期間,利用過濾介質之所有可用面積,使得壓降之上升速度慢於相鄰褶狀部分之間的間距較小時的上升速度。這由於有效過濾面積增加而允許更多過濾,如較小顆粒之移除及/或較長的過濾壽命。In fact, by allowing the use of finer media that can remove smaller size particles from the gaseous fluid stream and / or by extending the life of the filter element, it was unexpectedly found that having a pleating ratio of no more than 7 not only reduces the filter The rate of increase in medium pressure drop (DP) increases the level of filtration available. The applicant considers this to be a direct effect of the "pleating ratio" effect; using the optimal pleating ratio, the filter element has a more effective medium available due to the optimal spacing between the pleated portions. During the filtration process, all available area of the filter medium is used, so that the pressure drop rises at a slower rate than when the distance between adjacent pleated portions is small. This allows more filtration due to the increased effective filtration area, such as removal of smaller particles and / or longer filtration life.

由於對於不大於7之褶襇比壓降增加較慢且有效介質面積增加,可使用較細的過濾介質;比值高於7之過濾元件將負載過快且過快到達DP。在具有褶襇比不大於7之過濾元件中使用相同過濾介質使過濾元件更慢地負載,同時為下游元件提供更佳的保護。Because the pleated specific pressure drop does not increase more than 7 and the effective medium area increases slowly, thinner filter media can be used; filter elements with a ratio higher than 7 will load too fast and reach DP too quickly. The use of the same filter media in filter elements with a pleating ratio of no more than 7 allows the filter elements to load more slowly while providing better protection for downstream elements.

儘管不受此理論束縛,但申請人認為過濾器中壓降(DP)之降低及過濾之增加中之一種或兩種,顆粒尺寸減小或過濾器壽命延長均歸因於褶狀部分之間的最佳化間距。在一些實施中,這可歸因於相鄰褶狀部分之間接納並固持微粒污染物之額外體積。另外,褶狀部分之間的較大間距減少相鄰褶狀部分之間污染物橋接的發生。抑制污染物橋接增加可用的過濾介質面積(有效介質面積)且延長過濾器壽命,從而提供較慢的壓降提高。Although not limited by this theory, the applicant believes that one or both of the reduction in pressure drop (DP) in the filter and the increase in filtration, the decrease in particle size or the extension of the filter life are attributed between the pleated portions Optimized spacing. In some implementations, this can be attributed to the extra volume that receives and holds particulate contamination between adjacent pleated portions. In addition, the larger spacing between the pleated portions reduces the occurrence of contaminant bridging between adjacent pleated portions. Suppressing contaminant bridging increases the area of available filter media (effective media area) and extends filter life, thereby providing a slower increase in pressure drop.

申請人發現對於晶圓沈積系統(例如CVD、MOCVD),對於當前使用的工具、系統及方法,具有不大於7之褶襇比之過濾元件為最佳的。然而,基於所過濾流體、自其移除之污染物、流體流動速率等,每個應用都存在最佳的褶襇比。申請人發現過濾器可以經專門設計以滿足應用所判定之比值。The applicant has found that for wafer deposition systems (eg, CVD, MOCVD), for currently used tools, systems, and methods, a filter element having a pleating ratio of no more than 7 is optimal. However, based on the fluid being filtered, the contaminants removed from it, the fluid flow rate, etc., there is an optimal pleat ratio for each application. Applicants have found that filters can be specifically designed to meet the ratios determined by the application.

如上文所解釋,具有不大於7 (在一些實施中不大於6.5、或不大於6.2、或不大於6等)之褶襇比產生提高長過濾器壽命及高過濾水準之獨特能力。提高的過濾水準導致泵壽命延長及泵維護成本降低。最佳化亦允許與使用高過濾水準(例如傳遞較小尺寸之顆粒及較少顆粒)一致的延長之維護週期(例如過濾器壽命及相關的零件、腔室清潔等)。高過濾及長維護週期之此獨特組合降低晶圓處理系統之總擁有成本,因為維護週期為總擁有成本之重要部分。不僅維護活動自身具有成本(例如新過濾元件、可能必須置換的其他密封件或裝備(例如泵)的成本、維修技術員的成本、由於正停產維護之系統所引起的生產力損失),而且每次維護反應器或其他晶圓處理系統,系統在維護之後直至若干次運行之後才會返回至全部生產能力。前幾次運行之所有或一部分為廢品材料,從而增加了材料、時間、生產力等損耗。As explained above, having a pleating ratio of no greater than 7 (in some implementations no greater than 6.5, or no greater than 6.2, or no greater than 6 etc.) results in a unique ability to increase long filter life and high filtration levels. Increased filtration levels lead to longer pump life and lower pump maintenance costs. Optimization also allows extended maintenance intervals (such as filter life and related parts, chamber cleaning, etc.) consistent with the use of high filtration levels (such as passing smaller sized particles and fewer particles). This unique combination of high filtration and long maintenance cycles reduces the total cost of ownership of the wafer processing system, as maintenance cycles are an important part of the total cost of ownership. Not only does the maintenance activity itself have costs (such as the cost of new filter elements, other seals or equipment that may have to be replaced (such as pumps), the cost of repair technicians, lost productivity due to systems being shut down for maintenance), but also every maintenance Reactors or other wafer processing systems. After maintenance, the system does not return to full production capacity until several runs. All or part of the previous runs were waste materials, increasing material, time, productivity, etc.

藉由延長過濾元件壽命,所進行維護週期之次數及頻率降低。另外,過濾元件壽命較長導致正使用及歷經相同時段安置的過濾元件及與過濾元件更換相關的零件減少。相比於較低的過濾水準,真空泵壽命亦得以保護及延長,進一步改善擁有成本。By extending the life of the filter element, the number and frequency of maintenance cycles are reduced. In addition, the long life of the filter element results in a reduction in the number of filter elements that are being used and that have been placed over the same period, as well as parts related to filter element replacement. Compared to lower filtration levels, the life of the vacuum pump is also protected and extended, further improving the cost of ownership.

以下比較在1號過濾器(DI 為6.0吋、DO 為9.75吋,具有70個褶狀部分,因此褶襇比為8.89之過濾元件)與2號過濾器(具有48個褶狀部分且因此褶襇比為6.10之相同尺寸之過濾器)之間進行。The following compares filter No. 1 (a filter element with 6.0 inches in D I and 9.75 inches in D O with 70 pleated portions, so a pleated ratio of 8.89) and filter No. 2 (with 48 pleated portions and Therefore, the pleating ratio is 6.10.

1號及2號過濾元件中之每一者均安裝於MOCVD晶圓處理系統中。量測及記錄在一個處理運行之後過濾器中之壓降。完成「X」次運行,且量測及記錄在「X」次處理運行之後過濾器中之壓降。在此等「X」次運行之後,在不更換過濾元件情況下清潔反應器。完成「Y」次額外運行,且量測及記錄在「Y」次處理運行之後過濾器中之壓降。 Each of the No. 1 and No. 2 filter elements is installed in a MOCVD wafer processing system. Measure and record the pressure drop across the filter after a processing run. After completing "X" runs, and measuring and recording the pressure drop in the filter after "X" processing runs. After these "X" runs, the reactor was cleaned without replacing the filter element. After completing "Y" additional runs, and measuring and recording the pressure drop in the filter after "Y" processing runs.

一般而言,基於在各種條件下使用不同尺寸之過濾元件進行的運行,發現褶襇比大於7 (例如8.89)之過濾器具有少於125次運行之典型壽命且提供25微米之過濾水準,而大小及形狀相同但具有較少褶狀部分以提供不大於7 (例如6.10)之褶襇比之過濾器具有大於240次運行之壽命且提供5微米之過濾水準。In general, based on the operation using different size filter elements under various conditions, it was found that filters with a pleating ratio greater than 7 (e.g. 8.89) have a typical life of less than 125 runs and provide a filtration level of 25 microns, Filters of the same size and shape but with fewer pleated portions to provide a pleated ratio of no more than 7 (eg 6.10) have a life of more than 240 runs and provide a filtration level of 5 microns.

總之,本發明提供一種用於自氣態流體(例如空氣)移除微粒污染物之過濾元件,其具有不大於7及在一些實施中大於2、3或4之褶襇比。In summary, the present invention provides a filter element for removing particulate contaminants from a gaseous fluid, such as air, which has a pleating ratio of no greater than 7 and in some implementations greater than 2, 3, or 4.

以上說明書及實例提供對本發明之例示性實施之結構、特徵及用途之完整描述。因為本發明之許多實施可以在不脫離本發明之精神及範疇情況下進行,所以本發明存在於下文中隨附之申請專利範圍中。此外,不同實施之結構特徵可以在不脫離所述申請專利範圍情況下組合於又一實施中。The above specification and examples provide a complete description of the structure, features, and uses of the exemplary implementation of the invention. Since many implementations of the invention can be made without departing from the spirit and scope of the invention, the invention resides in the scope of the patent applications appended below. In addition, the structural features of different implementations can be combined in another implementation without departing from the scope of the patent application.

100‧‧‧晶圓處理系統/系統/總成100‧‧‧ Wafer Processing System / System / Assembly

102‧‧‧腔室102‧‧‧ Chamber

104‧‧‧第一部分104‧‧‧ Part I

106‧‧‧第二部分106‧‧‧ Part Two

108‧‧‧封蓋108‧‧‧ Cover

110‧‧‧中心轂110‧‧‧Center Hub

112‧‧‧基板支撐112‧‧‧ substrate support

114‧‧‧抽氣源114‧‧‧Exhaust source

116‧‧‧氣體進料口116‧‧‧Gas inlet

118‧‧‧氣體進料口118‧‧‧Gas inlet

120‧‧‧排氣口120‧‧‧ exhaust port

122‧‧‧分離腔室122‧‧‧ separation chamber

125‧‧‧過濾元件125‧‧‧filter element

200‧‧‧過濾元件200‧‧‧Filter element

202‧‧‧褶狀部分202‧‧‧ Pleated section

204‧‧‧尖端204‧‧‧ Tip

206‧‧‧基底206‧‧‧ substrate

210‧‧‧空氣流動路徑210‧‧‧Air flow path

300‧‧‧過濾元件構造300‧‧‧Filter element structure

300A‧‧‧過濾元件300A‧‧‧Filter element

300B‧‧‧過濾元件300B‧‧‧Filter element

300C‧‧‧過濾元件300C‧‧‧Filter element

302‧‧‧第一端302‧‧‧ the first end

304‧‧‧第二端304‧‧‧Second End

310‧‧‧空氣流動路徑310‧‧‧Air flow path

DI‧‧‧內徑D I ‧‧‧ Inner diameter

DO‧‧‧外徑D O ‧‧‧ Outer diameter

圖1為通用晶圓處理總成之示意性橫截面側視圖。FIG. 1 is a schematic cross-sectional side view of a general wafer processing assembly.

圖2為過濾元件之示意性橫截面俯視圖。Fig. 2 is a schematic cross-sectional top view of a filter element.

圖3為過濾元件組態之側透視圖。Figure 3 is a side perspective view of a filter element configuration.

Claims (14)

一種用於晶圓處理系統之氣態流體過濾元件,該過濾元件包含自第一端延伸至與該第一端相對之第二端的過濾介質之延伸部分,該過濾介質形成環繞該過濾元件周向性地延伸的複數個褶狀部分,該複數個褶狀部分界定內徑及外徑,其中該過濾元件具有不大於7之褶襇比。A gaseous fluid filter element for a wafer processing system, the filter element includes an extension portion of a filter medium extending from a first end to a second end opposite to the first end, the filter medium forming a circumference surrounding the filter element A plurality of pleated portions extending on the ground, the plurality of pleated portions defining an inner diameter and an outer diameter, wherein the filter element has a pleating ratio of not more than 7. 如請求項1之過濾元件,其具有穿過該過濾介質之徑向向內氣態流體流。A filter element as claimed in claim 1 having a radially inward gaseous fluid flow through the filter medium. 如請求項1之過濾元件,其中該褶襇比不大於6.5。The filter element of claim 1, wherein the pleating ratio is not greater than 6.5. 如請求項1之過濾元件,其中該褶襇比不大於6。The filter element of claim 1, wherein the pleating ratio is not greater than 6. 如請求項1之過濾元件,其中該褶襇比至少為5。The filter element of claim 1, wherein the pleating ratio is at least 5. 如請求項1之過濾元件,其中該褶襇比為5至6。The filter element of claim 1, wherein the pleating ratio is 5 to 6. 一種其中具有過濾元件之晶圓處理總成,該過濾元件用於過濾來自泵上游之處理腔室的氣態排氣,該過濾元件包含自第一端延伸至與該第一端相對之第二端的過濾介質之延伸部分,該過濾介質形成環繞該過濾元件周向性地延伸的複數個褶狀部分,該複數個褶狀部分界定內徑及外徑,其中該過濾元件具有不大於7之褶襇比。A wafer processing assembly having a filter element therein for filtering gaseous exhaust gas from a processing chamber upstream of a pump, the filter element including a first end extending to a second end opposite to the first end An extended portion of the filter medium, the filter medium forming a plurality of pleated portions extending circumferentially around the filter element, the plurality of pleated portions defining an inner diameter and an outer diameter, wherein the filter element has pleats of no more than 7 ratio. 如請求項7之晶圓處理總成,其中該過濾元件係以與穿過該過濾元件之徑向向內氣態流動路徑水平之位置定向。As in the wafer processing assembly of claim 7, wherein the filter element is oriented at a position horizontal to a radial inward gaseous flow path passing through the filter element. 如請求項7之晶圓處理總成,其中該褶襇比不大於6.5。For example, the wafer processing assembly of item 7, wherein the pleat ratio is not greater than 6.5. 如請求項7之晶圓處理總成,其中該褶襇比不大於6。For example, the wafer processing assembly of item 7, wherein the pleat ratio is not greater than 6. 如請求項7之晶圓處理總成,其中該褶襇比至少為5。For example, the wafer processing assembly of claim 7, wherein the pleat ratio is at least 5. 如請求項7之晶圓處理總成,其中該總成為MOCVD總成。If the wafer processing assembly of item 7 is requested, this assembly becomes the MOCVD assembly. 一種清潔來自晶圓處理總成之排氣之方法,其包含: 使來自該晶圓處理總成之處理腔室之氛圍穿過具有不大於7之褶襇比之過濾元件以形成過濾排氣,以及 泵送該過濾排氣。A method for cleaning exhaust gas from a wafer processing assembly, comprising: passing an atmosphere from a processing chamber of the wafer processing assembly through a filter element having a pleating ratio of not more than 7 to form a filtered exhaust gas, And pump the filtered exhaust. 如請求項13之方法,其進一步包含將該過濾排氣自該晶圓處理總成泵出。The method of claim 13, further comprising pumping the filtered exhaust from the wafer processing assembly.
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KR20190035497A (en) 2019-04-03
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US10512862B2 (en) 2019-12-24

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