TW201918892A - Method of operating SSD in modern standby mode or connected standby mode and related SSD - Google Patents

Method of operating SSD in modern standby mode or connected standby mode and related SSD Download PDF

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TW201918892A
TW201918892A TW106138869A TW106138869A TW201918892A TW 201918892 A TW201918892 A TW 201918892A TW 106138869 A TW106138869 A TW 106138869A TW 106138869 A TW106138869 A TW 106138869A TW 201918892 A TW201918892 A TW 201918892A
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volatile memory
memory block
solid state
mode
standby mode
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TW106138869A
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黃意中
傅子瑜
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宏碁股份有限公司
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Abstract

An SSD includes a volatile memory block and a non-volatile memory block. When a system implemented with the SSD is required to enter a modern standby mode or a connected standby mode, data stored in the volatile memory block is written into the non-volatile memory block for performing write-cache buffer flushing before cutting off the power supplied to the volatile memory block. When receiving a wake-up signal associated with standby timeout refresh, the SSD performs data refresh on the non-volatile memory block in a DRAM-less mode during which no power is supplied to the volatile memory block.

Description

在現代待機模式或連線待機模式下操作固態硬碟之方法及相關固態硬碟Method of operating solid state hard disk in modern standby mode or wired standby mode and related solid state hard disk

本發明相關於一種在現代待機模式或連線待機模式下操作固態硬碟之方法及相關固態硬碟,尤指一種在現代待機模式或連線待機模式下操作固態硬碟以模擬無動態隨機存取記憶體模式架構之方法及相關固態硬碟。The invention relates to a method for operating a solid state hard disk in a modern standby mode or a wired standby mode, and a related solid state hard disk, in particular to operating a solid state hard disk in a modern standby mode or a wired standby mode to simulate no dynamic random storage. Take the memory mode architecture method and related solid state hard disk.

固態硬碟(solid state disk, SSD)是一種以記憶體配合控制晶片所組成的電腦儲存裝置。和傳統硬碟(hard disc drive, HDD)相比,固態硬碟具有存取速度快、低功耗、低噪音、抗震動,以及低熱量的優點,不僅使得資料能更加安全地得到儲存,而且當應用在靠電池供電的裝置上時可延長連續運轉時間。A solid state disk (SSD) is a computer storage device consisting of a memory with a control chip. Compared with traditional hard disk drives (HDDs), solid state drives have the advantages of fast access speed, low power consumption, low noise, vibration resistance, and low heat, which not only make data more securely stored, but also Continuous operation time can be extended when applied to battery powered devices.

固態硬碟普遍採用PCIe、SATA介面或NVMe介面,記憶體則可配置低功率動態隨機存取記憶體(low-power dynamic random access memory, LPDRAM),或採用無動態隨機存取記憶體(DRAM- less)之架構。由於LPDRAM價格較高,而DRAM-less架構的效能太差,有些固態硬碟會使用低電壓之雙通道3動態隨機存取記憶體(low-voltage double data rate 3 dynamic random access memory, DDR3L DRAM) 來做為SATA介面或NVMe介面的快取。Solid-state hard disks generally use PCIe, SATA interface or NVMe interface, and memory can be configured with low-power dynamic random access memory (LPDRAM) or non-dynamic random access memory (DRAM- Less) architecture. Low-voltage double data rate 3 dynamic random access memory (DDR3L DRAM) As a cache for the SATA interface or NVMe interface.

當在現代待機(modern standby)模式下或連線待機(connected standby)模式下運作時,系統會定時地(約30秒)被喚醒,更新完資料後隨即再次進入待機以維持低功耗狀態。每次進入現代待機模式或連線待機模式時,固態硬碟須進入DevSlp(SATA介面)或PS4(NVMe介面)以下的電源狀態。相較於LPDRAM能在低耗電狀態下保留資料,DDR3L DRAM在進入PS4電源狀態時則會被斷電,因此必須執行寫入快取緩衝區排清(write-cache buffer flushing)以將存放於DDR3L DRAM中的資料存入反及快閃記憶體(NAND flash)中保存。但如此頻繁的排清寫入動作對固態硬碟的壽命是很大的傷害,以256GB的固態硬碟為例,動態隨機存取記憶體的大小約為200MB,一天待機16小時的寫入量就達到375GB,光是停留在待機狀態超過六個半月就會超過JEDEC協會提出的72TBW寫入量,此時的固態硬碟將隨時有資料毀損的風險。When operating in modern standby mode or connected standby mode, the system will wake up periodically (about 30 seconds), and after updating the data, it will enter standby again to maintain the low power state. Each time you enter the modern standby mode or the connected standby mode, the solid state drive must enter the power state below DevSlp (SATA interface) or PS4 (NVMe interface). Compared to LPDRAM, which can retain data under low power consumption, DDR3L DRAM will be powered off when entering PS4 power state, so write-cache buffer flushing must be performed to store The data stored in DDR3L DRAM is stored in reverse NAND flash. However, such frequent cleaning and writing operations are very harmful to the life of the solid state hard disk. Taking a 256 GB solid state hard disk as an example, the size of the dynamic random access memory is about 200 MB, and the waiting time is 16 hours per day. As of 375GB, staying in standby for more than six and a half months will exceed the 72TBW writes proposed by the JEDEC Association. At this time, the SSD will be at risk of data corruption.

因此,需要於一種能在現代待機模式或連線待機模式下操作固態硬碟之方法及相關固態硬碟,以兼顧動態隨機存取記憶體的高效能和低寫入量。Therefore, there is a need for a method and a related solid state hard disk capable of operating a solid state hard disk in a modern standby mode or a wired standby mode to balance the high performance and low write capacity of the dynamic random access memory.

本發明提供一種在一現代待機模式或一連線待機模式下操作一固態硬碟之方法。該固態硬碟包含一揮發性記憶體區塊和一非揮發性記憶體區塊。該方法包含當判斷應用該固態硬碟之一系統需要進入該現代待機模式或該連線待機模式時,該揮發性記憶體區塊將內存資料寫入該非揮發性記憶體區塊以執行一寫入快取緩衝區排清運作、當該系統於該現代待機模式或該連線待機模式下運作時,停止供電給該揮發性記憶體區塊;以及當接收到相關於待機逾時更新之一第一喚醒訊號時,該固態硬碟在一無動態隨機存取記憶體模式下對該非揮發性記憶體區塊進行資料更新,其中在該無動態隨機存取記憶體模式下該揮發性記憶體區塊並未被供電。The present invention provides a method of operating a solid state hard disk in a modern standby mode or a connected standby mode. The solid state hard disk includes a volatile memory block and a non-volatile memory block. The method includes: when it is determined that a system applying the solid state hard disk needs to enter the modern standby mode or the wired standby mode, the volatile memory block writes memory data into the non-volatile memory block to perform a write The cache buffer clear operation, when the system operates in the modern standby mode or the wired standby mode, power supply to the volatile memory block is stopped; and when one of the standby timeout updates is received When the first wake-up signal is received, the solid-state hard disk updates the non-volatile memory block in a non-dynamic random access memory mode, wherein the volatile memory in the non-dynamic random access memory mode The block is not powered.

第1圖為本發明實施例中一固態硬碟100之功能方塊圖。固態硬碟100可應用在任何電腦系統,其包含一揮發性記憶體區塊10、一非揮發性記憶體區塊20,以及一控制單元30。揮發性記憶體區塊10可由低電壓之雙通道3動態隨機存取記憶體(low-voltage double data rate 3 dynamic random access memory, DDR3L DRAM)來實作,或由其它低電壓動態隨機存取記憶體元件來實作。非揮發性記憶體區塊20可由反及快閃記憶體(NAND flash)來實作,或由其他種類的快閃記憶體來實作。控制單元30可接受系統傳來的訊息,並依此控制固態硬碟100中各元件的運作。1 is a functional block diagram of a solid state hard disk 100 in an embodiment of the present invention. The solid state hard disk 100 can be applied to any computer system including a volatile memory block 10, a non-volatile memory block 20, and a control unit 30. The volatile memory block 10 can be implemented by a low-voltage double data rate 3 dynamic random access memory (DDR3L DRAM) or by other low-voltage dynamic random access memories. Body components are implemented. The non-volatile memory block 20 can be implemented by inverse NAND flash or by other types of flash memory. The control unit 30 accepts messages from the system and controls the operation of the components in the solid state drive 100 accordingly.

第2圖為本發明實施例中固態硬碟100運作時之流程圖,其包含下列步驟:FIG. 2 is a flow chart of the operation of the solid state hard disk 100 in the embodiment of the present invention, which includes the following steps:

步驟210: 控制單元30判斷系統是否需要進入現代待機模式或連線待機模式;若是,執行步驟220;若否,執行步驟210。Step 210: The control unit 30 determines whether the system needs to enter the modern standby mode or the wired standby mode; if yes, step 220 is performed; if not, step 210 is performed.

步驟220: 控制單元30控制揮發性記憶體區塊10將內存資料寫入非揮發性記憶體區塊20以執行寫入快取緩衝區排清運作;執行步驟230。Step 220: The control unit 30 controls the volatile memory block 10 to write the memory data into the non-volatile memory block 20 to perform the write cache buffer clearing operation; and step 230 is performed.

步驟230: 當系統於現代待機模式或連線待機模式下運作時,停止供電給揮發性記憶體區塊10;執行步驟240。Step 230: When the system operates in the modern standby mode or the wired standby mode, power supply to the volatile memory block 10 is stopped; step 240 is performed.

步驟240: 控制單元30判斷是否接收到一喚醒訊號;若是,執行步驟250;若否,執行步驟240。Step 240: The control unit 30 determines whether a wake-up signal is received; if yes, step 250 is performed; if not, step 240 is performed.

步驟250: 控制單元30判斷喚醒訊號是相關於待機逾時更新或相關於進入S0模式;若相關於待機逾時更新,執行步驟260;若相關於進入S0模式,執行步驟270。Step 250: The control unit 30 determines that the wake-up signal is related to the standby timeout update or is related to the entry S0 mode; if it is related to the standby timeout update, step 260 is performed; if it is related to the entry S0 mode, step 270 is performed.

步驟260:在一無動態隨機存取記憶體(DRAM-less)模式下對非揮發性記憶體區塊20進行資料更新;執行步驟230。Step 260: Perform data update on the non-volatile memory block 20 in a DRAM-less mode; perform step 230.

步驟270:供電給揮發性記憶體區塊10,並將非揮發性記憶體區塊20內存資料寫回揮發性記憶體區塊10;執行步驟280。Step 270: The power is supplied to the volatile memory block 10, and the memory data of the non-volatile memory block 20 is written back to the volatile memory block 10; step 280 is performed.

步驟280:系統進入S0模式;執行步驟210。Step 280: The system enters the S0 mode; and step 210 is performed.

如相關領域具備通常知識者皆知,WINDOWS作業系統支援進階組態與電源介面(Advanced Configuration and Power Interface, ACPI),其中電源選項中模式S1~S5的定義如下:As is well known in the relevant fields, the WINDOWS operating system supports the Advanced Configuration and Power Interface (ACPI). The definitions of the modes S1~S5 in the power supply options are as follows:

S0模式:所有元件正常運作。S0 mode: All components are operating normally.

S1模式:中央處理單元(CPU)停止工作。S1 mode: The central processing unit (CPU) stops working.

S2模式:CPU關閉。S2 mode: The CPU is turned off.

S3模式:除了記憶體以外的配件(包含風扇)都停止工作。S3 mode: Accessories other than memory (including fans) stop working.

S4模式:將記憶體資料寫入硬碟,所有配件停止工作。S4 mode: Write the memory data to the hard disk and all the accessories stop working.

S5模式:關閉所有元件。S5 mode: Turn off all components.

S4模式通常為系統的預設休眠模式,由於已經把記憶體中的資料完整的存在硬碟中,之後喚醒時就可以直接從硬碟讀到記憶體,因為不需像開機一樣執行一堆應用程式,因此速度比正常開機要快許多。The S4 mode is usually the system's default sleep mode. Since the data in the memory has been completely stored in the hard disk, the memory can be read directly from the hard disk after waking up, because there is no need to execute a bunch of applications like booting. Program, so the speed is much faster than normal boot.

連線待機模式或現代待機模式是WINDOWS作業系統全新的電源管理系統,即當系統進入休眠狀態時,應用程式雖處於暫停(suspend)的狀態,但依舊會與網路維持連線。也就是說,在Metro UI上的應用程式會持續的更新並接收新的資訊,讓使用者能即時隨時地更新裝置上的特定資料或應用程式(例如電子郵件和訊息通知等)。另一方面,其它未在螢幕上執行的應用程式則會暫時停置並儲存其狀態,也就是說不會佔用CPU的功耗以達到有效電源管理之目的。換句話說,當系統在連線待機模式或現代待機模式下運作時,其行為如同智慧型手機一般,雖然螢幕裝置關閉或休眠,但其他應用程式會以低功耗的電源去維持和遠端連結,以讓資訊不會遺漏或延遲更新。The wired standby mode or the modern standby mode is a new power management system for the WINDOWS operating system. When the system enters the sleep state, the application is suspended (suspend), but it will still be connected to the network. In other words, the application on the Metro UI will continue to update and receive new information, allowing users to instantly update specific data or applications (such as emails and message notifications) on the device. On the other hand, other applications that are not executed on the screen will temporarily stop and store their state, which means that they do not consume CPU power for effective power management purposes. In other words, when the system is operating in wired standby mode or modern standby mode, it behaves like a smart phone. Although the screen device is turned off or hibernated, other applications will maintain and remotely with low power. Link to let the information not be missed or delayed.

在步驟210中,控制單元30會判斷應用固態硬碟100之系統是否需要進入現代待機模式或連線待機模式。進入現代待機模式或連線待機模式的指令可由使用者下達,或是由系統在閒置超過一段預定時間後自動發出相關指令。然而,應用固態硬碟100之系統進入現代待機模式或連線待機模式之條件並不限定本發明之範疇。In step 210, the control unit 30 determines whether the system to which the solid state hard disk 100 is applied needs to enter the modern standby mode or the wired standby mode. The command to enter the modern standby mode or the wired standby mode can be issued by the user, or the system automatically issues relevant instructions after being idle for more than a predetermined period of time. However, the conditions in which the system using the solid state hard disk 100 enters the modern standby mode or the wired standby mode does not limit the scope of the present invention.

當應用固態硬碟100之系統需要進入現代待機模式或連線待機模式時,控制單元30會在步驟220中控制揮發性記憶體區塊10將內存資料寫入非揮發性記憶體區塊20以執行寫入快取緩衝區排清運作。接著在步驟230中當系統於現代待機模式或連線待機模式下運作時,固態硬碟100會停止供電給揮發性記憶體區塊10以降低系統功耗。When the system applying the solid state hard disk 100 needs to enter the modern standby mode or the wired standby mode, the control unit 30 controls the volatile memory block 10 to write the memory data to the non-volatile memory block 20 in step 220. Execute the write cache buffer to clear the operation. Next, when the system is operating in the modern standby mode or the wired standby mode in step 230, the solid state hard disk 100 stops supplying power to the volatile memory block 10 to reduce system power consumption.

在步驟240,控制單元30會判斷是否接收到喚醒訊號。如前所述,當系統進入現代待機模式或連線待機模式時,依舊會與網路維持連線,在Metro UI上的應用程式會持續的更新並接收新的資訊,因此需要每隔一段時間來進行待機逾時更新以確保資料完整性。此外,系統也可能會因為使用者下達的指令而觸發回到正常S0模式的事件。因此,本發明可在步驟250中判斷喚醒訊號是相關於待機逾時更新或相關於進入S0模式。At step 240, control unit 30 determines if a wake-up signal has been received. As mentioned earlier, when the system enters the modern standby mode or the connected standby mode, it will still be connected to the network. The application on the Metro UI will continue to update and receive new information, so it needs to be at regular intervals. To perform a standby overtime update to ensure data integrity. In addition, the system may also trigger an event returning to the normal S0 mode due to an instruction issued by the user. Accordingly, the present invention can determine in step 250 that the wake-up signal is related to a standby timeout update or to an entry S0 mode.

若在步驟250中判斷喚醒訊號相關於待機逾時更新,本發明會執行步驟260以在DRAM-less模式下對非揮發性記憶體區塊20進行資料更新,但揮發性記憶體區塊10仍不供電。換句話說,本發明在進行待機逾時更新時並不會增加揮發性記憶體區塊10之資料寫入量。If it is determined in step 250 that the wake-up signal is related to the standby timeout update, the present invention performs step 260 to perform data update on the non-volatile memory block 20 in the DRAM-less mode, but the volatile memory block 10 remains No power supply. In other words, the present invention does not increase the amount of data written by the volatile memory block 10 when performing the standby timeout update.

若在步驟250中判斷喚醒訊號相關於進入S0模式,本發明會執行步驟270以供電給揮發性記憶體區塊10,並將非揮發性記憶體區塊20內存資料寫回揮發性記憶體區塊10。如此一來,當系統於步驟280進入S0模式時,固態硬碟100即可快速地提供資料以回復至先前工作狀態。If it is determined in step 250 that the wake-up signal is related to entering the S0 mode, the present invention performs step 270 to supply power to the volatile memory block 10, and writes the non-volatile memory block 20 memory data back to the volatile memory region. Block 10. In this way, when the system enters the S0 mode in step 280, the solid state hard disk 100 can quickly provide data to return to the previous working state.

在本發明中,步驟260中進入DRAM-less模式之方式可由韌體或另結合軟體之方式來實現。在韌體結合軟體之實施例中,系統可在設定配置指令(Set Feature Command)中新增一通知,以告知固態硬碟100需在DRAM-less模式下執行待機逾時更新,固態硬碟100之軔體也修正成可辨識設定配置指令中新增之通知。在韌體之實施例中,固態硬碟100可在控制單元30中設立相關於DRAM-less模式之一旗標(flag):當系統進入現代待機模式或連線待機模式時,控制單元30會舉起(raise)旗標,代表在進行待機逾時更新時是在DRAM-less模式下對非揮發性記憶體區塊20進行資料更新;當系統觸發恢復S0模式之事件時,控制單元30會清除(reset)旗標,代表對揮發性記憶體區塊10進行資料更新。In the present invention, the manner of entering the DRAM-less mode in step 260 can be implemented by means of firmware or another combination of software. In the embodiment of the firmware binding software, the system may add a notification in the Set Feature Command to inform the solid state hard disk 100 that the standby timeout update is to be performed in the DRAM-less mode, the solid state hard disk 100 The body is also modified to recognize the new notifications in the configuration command. In an embodiment of the firmware, the solid state drive 100 can set a flag associated with the DRAM-less mode in the control unit 30: when the system enters the modern standby mode or the wired standby mode, the control unit 30 Raising the flag, indicating that the non-volatile memory block 20 is updated in the DRAM-less mode when the standby timeout update is performed; when the system triggers the event of restoring the S0 mode, the control unit 30 The reset flag indicates that the volatile memory block 10 is updated with data.

綜上所述,本發明提供一種能在現代待機模式或連線待機模式下操作固態硬碟之方法及相關固態硬碟。當系統於現代待機模式或連線待機模式下運作時,本發明之固態硬碟在DRAM-less模式下進行待機逾時更新,因此可降低揮發性記憶體區塊之寫入量。當系統需要回到正常模式時,本發明之固態硬碟會在揮發性記憶體區塊進行資料更新以提升存取效能。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。In summary, the present invention provides a method and related solid state hard disk capable of operating a solid state hard disk in a modern standby mode or a wired standby mode. When the system operates in the modern standby mode or the wired standby mode, the solid state hard disk of the present invention performs standby overtime update in the DRAM-less mode, thereby reducing the amount of writing of volatile memory blocks. When the system needs to return to the normal mode, the solid state hard disk of the present invention performs data update in the volatile memory block to improve access efficiency. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

10‧‧‧揮發性記憶體區塊10‧‧‧ volatile memory blocks

20‧‧‧非揮發性記憶體區塊20‧‧‧Non-volatile memory blocks

30‧‧‧控制單元30‧‧‧Control unit

100‧‧‧固態硬碟100‧‧‧ Solid State Drive

210~280‧‧‧步驟210~280‧‧‧Steps

第1圖為本發明實施例中一固態硬碟之功能方塊圖。 第2圖為本發明實施例中固態硬碟運作時之流程圖。1 is a functional block diagram of a solid state hard disk in an embodiment of the present invention. FIG. 2 is a flow chart of the operation of the solid state hard disk in the embodiment of the present invention.

Claims (7)

一種在一現代待機模式或一連線待機模式下操作一固態硬碟(solid state disk, SSD)之方法,該固態硬碟包含一揮發性記憶體區塊和一非揮發性記憶體區塊,該方法包含: 當判斷應用該固態硬碟之一系統需要進入該現代待機模式或該連線待機模式時,該揮發性記憶體區塊將內存資料寫入該非揮發性記憶體區塊以執行一寫入快取緩衝區排清運作; 當該系統於該現代待機模式或該連線待機模式下運作時,停止供電給該揮發性記憶體區塊;以及 當接收到相關於待機逾時更新之一第一喚醒訊號時,該固態硬碟在一無動態隨機存取記憶體(DRAM-less)模式下對該非揮發性記憶體區塊進行資料更新,其中在該無動態隨機存取記憶體模式下該揮發性記憶體區塊並未被供電。A method of operating a solid state disk (SSD) in a modern standby mode or a wired standby mode, the solid state hard disk including a volatile memory block and a non-volatile memory block. The method includes: when it is determined that a system applying the solid state hard disk needs to enter the modern standby mode or the wired standby mode, the volatile memory block writes memory data into the non-volatile memory block to execute a Writing to the cache buffer to clear the operation; when the system operates in the modern standby mode or the wired standby mode, powering off the volatile memory block; and receiving an update related to the standby timeout When the first wake-up signal is received, the solid state hard disk performs data update on the non-volatile memory block in a DRAM-less mode, wherein the non-dynamic random access memory mode The volatile memory block is not powered. 如請求項1所述之方法,其另包含: 當接收到相關於進入一S0模式之一第二喚醒訊號時,該固態硬碟供電給該揮發性記憶體區塊,並將該非揮發性記憶體區塊內存資料寫回該揮發性記憶體區塊。The method of claim 1, further comprising: when receiving a second wake-up signal related to entering one of the S0 modes, the solid state hard disk supplies power to the volatile memory block, and the non-volatile memory is The body block memory data is written back to the volatile memory block. 如請求項2所述之方法,其另包含: 該固態硬碟設立相關於該無動態隨機存取記憶體模式之一旗標(flag); 當該系統進入該現代待機模式或該連線待機模式時,該固態硬碟舉起該旗標;以及 當該系統觸發恢復該S0模式之事件時,該固態硬碟清除該旗標。The method of claim 2, further comprising: the solid state hard disk setting a flag associated with the no-dynamic random access memory mode; when the system enters the modern standby mode or the connection is standby In the mode, the solid state hard disk raises the flag; and when the system triggers an event to resume the S0 mode, the solid state hard disk clears the flag. 如請求項1所述之方法,其另包含: 該系統在一設定配置指令(Set Feature Command)中新增一通知,以告知該固態硬碟需在該無動態隨機存取記憶體模式下執行待機逾時更新。The method of claim 1, further comprising: the system adding a notification in a set configuration command to notify the solid state hard disk to be executed in the no-dynamic random access memory mode Standby timeout update. 如請求項1所述之方法,其另包含: 使用低電壓之雙通道3動態隨機存取記憶體(low-voltage double data rate 3 dynamic random access memory, DDR3L DRAM)來實作該揮發性記憶體區塊;且 使用反及快閃記憶體(NAND flash)來實作該非揮發性記憶體區塊。The method of claim 1, further comprising: implementing the volatile memory using a low-voltage double data rate 3 dynamic random access memory (DDR3L DRAM) Block; and use the inverse NAND flash to implement the non-volatile memory block. 一種固態硬碟,其包含: 一揮發性記憶體區塊; 一非揮發性記憶體區塊;以及 一控制單元,用來: 當判斷應用該固態硬碟之一系統需要進入一現代待機模式或一連線待機模式時,控制該揮發性記憶體區塊將內存資料寫入該非揮發性記憶體區塊以執行一寫入快取緩衝區排清運作; 當該系統於該現代待機模式或該連線待機模式下運作時,停止供電給該揮發性記憶體區塊;以及 當接收到相關於待機逾時更新之一第一喚醒訊號時,控制該固態硬碟在一無動態隨機存取記憶體模式下對該非揮發性記憶體區塊進行資料更新,其中在該無動態隨機存取記憶體模式下該揮發性記憶體區塊並未被供電;以及 當接收到相關於進入一S0模式之一第二喚醒訊號時,控制該固態硬碟供電給該揮發性記憶體區塊,並控制該非揮發性記憶體區塊將內存資料寫回該揮發性記憶體區塊。A solid state hard disk comprising: a volatile memory block; a non-volatile memory block; and a control unit for: when determining that one of the solid state drives is required to enter a modern standby mode or In a connected standby mode, controlling the volatile memory block to write memory data into the non-volatile memory block to perform a write cache buffer clearing operation; when the system is in the modern standby mode or Stopping power supply to the volatile memory block when operating in the wired standby mode; and controlling the solid state hard disk in a no-dynamic random access memory when receiving one of the first wake-up signals related to the standby timeout update Data updating of the non-volatile memory block in the body mode, wherein the volatile memory block is not powered in the non-dynamic random access memory mode; and when receiving the relevant entry into a S0 mode Controlling the solid state hard disk to the volatile memory block when the second wake-up signal is received, and controlling the non-volatile memory block to write the memory data back to the volatile memory Piece. 如請求項6所述之固態硬碟,其中: 該揮發性記憶體區塊係由低電壓之雙通道3動態隨機存取記憶體(low-voltage double data rate 3 dynamic random access memory, DDR3L DRAM)來實作;且 該非揮發性記憶體區塊係由反及快閃記憶體(NAND flash)來實作。The solid state hard disk of claim 6, wherein: the volatile memory block is a low-voltage double data rate 3 dynamic random access memory (DDR3L DRAM) The implementation is performed; and the non-volatile memory block is implemented by inverse NAND flash.
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