TW201913824A - Process kit, semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Abstract

A process kit for a deposition apparatus is provided. The process kit includes a hollow annular surface, a plurality of first grooves, and a plurality of second grooves. The hollow annular structure has an annular surface. The first grooves and second grooves are formed on the annular surface, and the first grooves intersect the second grooves to form a mesh pattern.

Description

 Process parts, semiconductor manufacturing equipment, and semiconductor manufacturing methods  

Embodiments of the present invention relate to a semiconductor technology, and more particularly to a process part, a semiconductor manufacturing apparatus, and a semiconductor manufacturing method that can improve a deposition process.

Semiconductor devices are used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic devices. The semiconductor device is generally fabricated by sequentially depositing an insulating or dielectric layer material, a conductive layer material, and a semiconductor layer material on a semiconductor substrate, and then patterning the various material layers formed using a lithography process to form circuit components and parts. Above the semiconductor substrate.

For example, sputtering is a physical vapor deposition that can be widely used to deposit metal layer materials or films. The sputtering method works by passing a small amount of inert gas (usually using argon (Ar)) in a closed chamber close to vacuum, and then applying a high voltage between the anode and the cathode to dissociate the gas to produce a plasma. (plasma), then dissociated argon ions (Ar ⁺ ) are injected at high energy onto the metal target of the cathode, causing metal particles on the surface of the target to be impacted and deposited on the surface of the substrate.

Although existing deposition techniques and equipment are sufficient to meet their needs, they are still not fully met. Therefore, there is a need to provide a solution for improving the deposition process.

SUMMARY OF THE INVENTION Some embodiments provide a process component suitable for use in a deposition process apparatus, including a hollow annular structure, a plurality of first trenches, and a plurality of second trenches. The hollow annular structure has an annular surface. The first trench and the second trench are formed on the annular surface, and the first trench intersects the second trench to form a mesh pattern.

The present disclosure provides a semiconductor manufacturing apparatus including a process chamber and a process component. The process part is disposed in the process chamber for reducing process material deposition on an inner wall surface of the process chamber and/or a substrate carrying platform during the manufacturing process. The process part has a plurality of first trenches and a plurality of second trenches on a surface of one of the target components, and the first trenches intersect the second trenches to form a mesh pattern.

The present disclosure provides a semiconductor fabrication method including placing a substrate in a process chamber. The above method also includes performing a deposition process on the substrate. In addition, the above method includes reducing process material deposition on one or more components in the process chamber by one of the process parts in the process chamber during the deposition process, wherein one of the process parts has a plurality of first grooves on the surface The groove and the plurality of second grooves, and the first groove intersects the second groove to form a mesh pattern.

1‧‧‧Semiconductor manufacturing equipment

10‧‧‧Processing chamber

10A‧‧‧ Shell

10B‧‧‧Opening

10C‧‧‧ inner wall surface

10D‧‧‧Flange

11‧‧‧Loading platform

11A‧‧‧Axis

11B‧‧‧ drive mechanism

11C‧‧‧ annular groove

11D‧‧‧Bud

12‧‧‧ Target components

12A‧‧‧Electrical substrate

12B‧‧‧ Target

13‧‧‧ gas supply unit

13A‧‧‧ gas tank

13B‧‧‧Flow Controller

14‧‧‧Exhaust device

15‧‧‧Power supply

16‧‧‧Magnetic field control device

17‧‧‧Cell mask

17A‧‧‧round opening

17B‧‧‧Bend

18‧‧‧Sedimentation ring

18A‧‧‧ (ring) upper surface

18B‧‧‧ring area

18C‧‧‧ inside part

18D‧‧‧Outer part

181‧‧‧Substrate

182‧‧‧ material layer

19‧‧‧ Coverage ring

19A‧‧‧Depression

19B‧‧‧(ring) inclined surface

19C‧‧‧ inside edge

19D‧‧‧Outer edge

19E‧‧‧Vertical inside surface

19F‧‧‧Vertical outside surface

80‧‧‧Semiconductor manufacturing methods

81‧‧‧83‧‧‧ operations

D‧‧‧Deep

G‧‧‧ trench

G1, G1’‧‧‧ first trench

G2‧‧‧second trench

G3‧‧‧ third trench

G4‧‧‧fourth groove

P‧‧‧Plastic

T‧‧‧Width

W‧‧‧Substrate

α, β‧‧‧ angle

FIG. 1 shows a schematic diagram of a semiconductor fabrication apparatus in accordance with some embodiments.

Figure 2 shows a top view of a deposition ring in accordance with some embodiments.

Figure 3 shows a partial perspective view of the deposition ring of Figure 2.

4A through 4D are cross-sectional views, respectively, showing trenches on a deposition ring in accordance with some embodiments.

5A and 5B are schematic views showing a method of fabricating a trench on a deposition ring, respectively, in accordance with some embodiments.

Figure 6 shows a partial top view of a cover ring in accordance with some embodiments.

Figure 7 shows a partial top view of a cover ring in accordance with some embodiments.

Figure 8 shows a flow chart of a semiconductor fabrication method in accordance with some embodiments.

The following disclosure provides many different embodiments or preferred examples to implement various features of the present disclosure. Of course, the disclosure may be embodied in many different forms and is not limited to the embodiments described below. The disclosure of the various components and their arrangement in detail is set forth in the accompanying drawings, and the description of the disclosure will be more fully understood.

Spatially related terms used in the following, such as "below," "below," "lower," "above," "higher," and the like, are used to facilitate the description. The relationship between one element or feature and another element or feature(s). In addition to the orientation depicted in the drawings, these spatially related terms are also intended to encompass different orientations of the device in use or operation. The device may be turned to a different orientation (rotated 90 degrees or other orientation), and the spatially related terms used herein may also be interpreted the same.

It is to be understood that elements not specifically shown or described may be in various forms well known to those skilled in the art. In addition, if a first feature is formed on or above a second feature in the embodiment, it may indicate that the first feature may be in direct contact with the second feature, and may also include additional features. Formed between the first feature and the second feature described above such that the first feature and the second feature are not in direct contact with each other.

The same component numbers and/or characters may be repeated in the following various embodiments, which are for the purpose of simplicity and clarity, and are not intended to limit the specific relationship between the various embodiments and/or structures discussed. In the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate the marking.

In addition, the quantities given in the examples below are approximate, meaning that the meanings of "about" and "about" may be implied without specific explanation. Here, the terms "about" and "about" are usually expressed within 20% of a given value or range, preferably within 10%, and more preferably within 5%.

FIG. 1 shows a schematic diagram of a semiconductor manufacturing apparatus 1 according to some embodiments. The semiconductor manufacturing apparatus 1 is, for example, a physical vapor deposition sputtering (PVD sputtering) apparatus, which can sputter a plurality of metals on a substrate W, for example, including gold (Au), titanium (Ti), copper (Cu), aluminum ( Al), chromium (Cr), tantalum (Ta), cobalt (Co), tungsten (W), nickel (Ni), zinc (Zn), zirconium (Zr) or an alloy of the above metals. The substrate W may include a semiconductor layer, a conductive layer, and/or an insulating layer. In some embodiments, substrate W includes a stacked semiconductor layer. For example, the substrate W includes a stack of semiconductor layers on an insulator, such as a silicon-on-insulator (SOI), a germanium crystal structure on a sapphire substrate, or The crucible structure is above the insulator. Alternatively, the substrate W comprises a stack of semiconductor layers on a germanium wafer or a glass substrate.

As shown in FIG. 1, the semiconductor manufacturing apparatus 1 includes a process chamber 10, a load bearing platform 11, a target component 12, a gas supply unit 13, an exhaust device 14, a power supply 15, and a magnetic field control. Device 16.

In the embodiment of FIG. 1, the process chamber 10 is a plasma processing chamber suitable for generating plasma therein for performing a sputtering deposition process (hereinafter referred to as a deposition process). The process chamber 10 is formed by a hermetically sealable outer casing 10A that can be used to house one or more substrates W to be processed. Although not shown, the housing 10A has an openable and closable gate that allows the substrate W to be fed into or out of the process chamber 10 through a substrate handling device, such as a robotic arm.

The carrier platform 11 is configured to support and hold at least one substrate W in the process chamber 10. In some embodiments, the carrier platform 11 includes an electrostatic chuck (ESC) that can be used to hold the substrate W against the electrostatic attraction of the opposite charge generated on the substrate W supported by the carrier platform 11. On the carrying platform 11. In some embodiments, the carrier platform 11 can also hold the substrate W through other mechanisms, such as vacuum adsorption or mechanical fixtures. In some embodiments, the carrier platform 11 may also include one or more heaters (eg, resistive heating elements) for heating the substrate W during the deposition process to promote deposition reactions thereon and improve film deposition uniformity.

Further, the carrier platform 11 can be supported in the process chamber 10 by a crankshaft 11A. In some embodiments, during the deposition process, the crankshaft 11A can be driven by a drive mechanism 11B (e.g., a motor) to cause the carrier platform 11 to rotate about the crankshaft 11A to improve film deposition uniformity on the substrate W. In some embodiments, the drive mechanism 11B can also drive the carrier platform 11 up and down to reach its predetermined position before or after the deposition process.

The target element 12 is disposed above the process chamber 10. In the embodiment of Figure 1, the target member 12 covers an opening 10B in one of the housings 10A, and an insulator (not shown) is disposed between the target member 12 and the housing 10A for electrically isolating both. According to some embodiments, the target component 12 includes a conductive substrate 12A and a target 12B that is secured to the conductive substrate 12A. The material of the target 12B includes gold, titanium, copper, aluminum, chromium, ruthenium, cobalt, tungsten, nickel, zinc, zirconium or an alloy of the above metals. The target element 12 is configured such that the target 12B faces the carrier platform 11 and the substrate W thereon.

The gas supply unit 13 is in communication with the process chamber 10 for passing a sputtering working gas into the process chamber 10. According to some embodiments, the sputtering working gas comprises nitrogen (N2), argon (Ar), oxygen (O2), ammonia (NH3), helium (Ne), or a mixture of the foregoing. According to some embodiments, the gas supply unit 13 includes a gas tank 13A and a mass flow controller 13B. The gas tank 13A is configured to store the above gas. The gas in the gas tank 13A flows into the process chamber 10 via the mass flow controller 13B, and the mass flow controller 13B controls the flow rate of the gas into the process chamber 10.

The venting device 14 is in communication with the process chamber 10 for maintaining the process chamber 10 in a low pressure environment during the deposition process. According to some embodiments, the air pressure in the low pressure environment is between about 1 torr and about 10 to ³ torr. According to other embodiments, the air pressure in the low pressure environment is between about 10 ^-3 Torr to about 10 ^-5 Torr. According to some embodiments, the venting device 14 includes a vacuum pump and a gas controller (eg, a valve, a flow meter, a detector, or other similar component).

The power supply 15 is electrically connected to the conductive substrate 12A of the target component 12 and another conductive substrate (not shown) in the carrier platform 11 for applying a high voltage between the two conductive substrates. According to some embodiments, the power supply 15 is a direct current (DC) power supply or a radio frequency (RF) power supply, and a cathode can be applied to the conductive substrate 12A of the target component 12, and An anode is applied to the conductive substrate within the carrier platform 11.

When a high voltage is applied between the two conductive substrates, a high electric field can be formed between the two conductive substrates, and the sputtering working gas (for example, argon (Ar)) in the processing chamber 10 is dissociated and discharged. It is plasma P (including many ions, electrons, molecules and atomic groups). Then, the positively charged gas ions (for example, argon ions (Ar ⁺ )) in the plasma P can be incident on the target 12B of the target element 12 of the cathode with high energy by a high electric field, so that the surface of the target 12B The metal particles are struck and deposited on the surface of the substrate W. In this way, the purpose of sputter deposition is achieved.

The magnetic field control device 16 is disposed on one side of the target element 12 for generating a magnetic field adjacent to the target element 12 during the deposition process. By the electromagnetic effect between the magnetic field and the electric field between the two conductive substrates, the electromagnetic force generated can affect the movement trajectory of the electrons in the plasma P, and increase the probability of ionization of the gas molecules in the plasma P, thereby More ions strike the target 12B, and more particles are sputtered onto the surface of the substrate W. Therefore, the magnetic field control device 16 helps to increase the deposition rate at the time of sputtering. According to some embodiments, the magnetic field control device 16 includes a plurality of electromagnetic arrays (eg, a plurality of electromagnets) and a control module for switching each electromagnetic array.

With continued reference to FIG. 1, a semiconductor fabrication apparatus 1 in accordance with some embodiments also includes a chamber shield 17, a deposition ring 18, and a cover ring 19.

The chamber mask 17 is configured to shield the inner wall surface 10C of the process chamber 10 from being subjected to metal particle sputtering during the deposition process. In the embodiment of Fig. 1, the chamber cover 17 has a cylindrical structure that is fixedly mounted in the process chamber 10 by being engaged with a flange 10D on the inner wall surface 10C of the process chamber 10. The chamber cover 17 is spaced apart from the inner wall surface 10C by a certain distance. Further, a center of the bottom of the chamber cover 17 is formed with a circular opening 17A which surrounds the outer peripheral surface of the carrier platform 11 when the chamber cover 17 is installed in the process chamber 10. According to some embodiments, the chamber cover 17 is made of a non-conductive ceramic material. Although not shown, a plurality of holes are provided in the chamber cover 17 to allow the flow of the sputtering working gas or the plasma P in the process chamber 10 to flow.

The deposition ring 18 is configured to shield the exposed portion of the carrier platform 11 from being subjected to metal particle sputtering or deposition of metal particles thereon during the deposition process. In the embodiment of FIG. 1, the deposition ring 18 has a hollow annular structure and is fixedly mounted outside the carrier platform 11 by being engaged with an annular groove 11C (around a projection 11D) located at an outer edge of the carrier platform 11. On the edge. The deposition ring 18 can be detached from the carrier platform 11. The deposition ring 18 and the annular groove 11C may have substantially equal widths, and the upper surface of the deposition ring 18 may be substantially coplanar with the upper surface of the land 11D of the carrier platform 11 for holding the substrate W. During the deposition process, the substrate only covers the central portion of the upper surface of the carrier platform 11, and the deposition ring 18 can shield and protect the exposed annular outer edge portion of the upper surface of the carrier platform 11. According to some embodiments, the deposition ring 18 is made of a metal material.

The cover ring 19 is also configured to reduce the deposition of metal particles on the exposed portion of the carrier platform 11 during deposition processes (similar to the effect of the deposition ring 18). In the embodiment of FIG. 1, the cover ring 19 has a hollow annular structure that is mounted in the process chamber 10 through a carrier (not shown), and the carrier can drive the cover ring 19 in the process chamber 10 Move up and down to reach its predetermined position. The cover ring 19 can be removed from the shelf. The cover ring 19 may cover at least a portion (outer edge portion) of the deposition ring 18, thereby reducing the running of the sputtered metal particles onto the exposed annular outer edge portion of the carrier platform 11 and the sidewalls of the carrier platform 11 that are not obscured by the deposition ring 18. on.

Furthermore, the cover ring 19 is further configured to reduce leakage of the plasma P from the gap between the carrier platform 11 and the circular opening 17A of the chamber cover 17. In the embodiment of Fig. 1, a lower portion of the cover ring 19 may be formed with a recess 19A corresponding to the chamber cover 17 adjacent to the bent portion 17B of the circular opening 17A, by the recess 19A and the bent portion The structural fit of 17B (as shown in Fig. 1) can reduce the leakage of the plasma P from the gap between the carrier platform 11 and the circular opening 17A of the chamber cover 17. According to some embodiments, the cover ring 19 is made of a metal material.

As shown in Fig. 1, the upper side of the cover ring 19 further has an outer high and low inner inclined surface 19B which helps concentrate the plasma P above the carrying platform 11 and the substrate W.

During the deposition process, the deposition ring 18 and the cover ring 19 near the carrier platform 11 and the substrate W can receive a large amount of sputtered metal particles, thereby reducing deposition of the sputtered metal particles (process material) in the process chamber 10 or A plurality of other components, such as the load bearing platform 11 and/or the inner wall surface 10C. However, as the thickness of the deposited metal film on the surface of the deposition ring 18 and the cover ring 19 is accumulated, the adhesion between the metal film and the surface of the deposition ring 18 and the cover ring 19 is lowered, and peeling may occur, resulting in a peeling phenomenon. The process chamber 10 is contaminated or affects the process yield of the substrate W.

In the embodiment of the present invention, by forming a embossed pattern (for example, a plurality of grooves) on the surface of the process part such as the deposition ring 18 and the cover ring 19, the deposition ring 18 and the cover ring 19 and the deposited metal film (process material) can be increased. The contact surface area, which in turn improves the adhesion of the deposited metal film. As a result, the service life and reliability of the deposition ring 18 and the cover ring 19 can be increased (the thickness of the accumulated deposited metal film can be increased without falling off easily), and the capacity and yield of the semiconductor manufacturing equipment 1 can be further improved. Next, the design of the engraved (groove) pattern on the deposition ring 18 and the cover ring 19 in accordance with some embodiments will be described with reference to FIGS. 2 through 7.

FIG. 2 shows a top view of deposition ring 18 in accordance with some embodiments. Figure 3 shows a partial perspective view of the deposition ring 18 of Figure 2. As shown in Figures 2 and 3, the deposition ring 18 has a plurality of grooves G on the annular upper surface 18A of the target member 20 (Fig. 1). More specifically, the groove G is formed in one of the annular regions 18B on the upper surface 18A. It is to be understood that, in some embodiments (as shown in FIG. 1), the inner portion 18C and the outer portion 18D of the upper surface 18A of the deposition ring 18 on the annular region 18B may be respectively covered by the substrate W and covered during the deposition process. The ring 19 is shielded from contact with the metal particles or the film, so the formation of the groove G in the inner portion 18C and the outer portion 18D is omitted to reduce the cost of fabricating the deposition ring 18. However, the groove G may also be formed on the entire upper surface 18A of the deposition ring 18.

In the embodiment of FIGS. 2 and 3, the trench G includes a plurality of first trenches G1 and a plurality of second trenches G2 uniformly distributed in the annular region 18B on the annular upper surface 18A of the deposition ring 18. And intersect to form a mesh pattern. More specifically, the plurality of first trenches G1 may be arranged on the annular upper surface 18A at equal intervals with respect to the center C of the deposition ring 18 at a concentric circular shape, and the plurality of second trenches G1 may be opposite to the center C They are arranged at equal intervals on the annular upper surface 18A in a radial form. According to some embodiments, the distance between the first trenches G1 is between 1 mm and 5 mm. As a result, the first and second trenches G1 and G2 can greatly increase the contact surface area between the deposition ring 18 and the deposited metal film, and improve the adhesion of the deposited metal film.

It is to be understood that the configurations of the first and second trenches G1 and G2 disclosed in the embodiments of FIGS. 2 and 3 are merely examples, and the first and second trenches G1 and G2 may have other configurations. form. For example, the distance between the first trenches G1 arranged in a concentric circular arrangement may also have a variation. For example, the distance between the first trenches G1 gradually increases from the inner side to the outer side of the annular region 18B, that is, the first and second The grooves G1 and G2 may also be distributed in a non-uniform manner within the annular region 18B (or the entire upper surface 18A) on the annular upper surface 18A of the deposition ring 18.

According to some embodiments, each of the first trenches G1 and the second trenches G2 formed on the upper surface 18A of the deposition ring 18 may also be along a first direction and a second direction (different from the first direction). Arrange and intersect to form a mesh pattern.

4A through 4D are cross-sectional views showing trenches G (which may include first and second trenches G1 and G2) on the upper surface 18A of the deposition ring 18, respectively, in accordance with some embodiments.

As shown in FIG. 4A, the cross section of the groove G may have a triangular shape including two inclined side walls, and an angle α is formed between the two side walls. According to some embodiments, the angle a is between 45 and 135 degrees. According to some embodiments, the cross section of the trench G may be a right-angled triangle including a vertical sidewall and an inclined sidewall, and an angle α between an angle of 45 to 60 degrees is formed between the two sidewalls.

As shown in FIG. 4B, the cross section of the groove G may be a rectangle including two vertical side walls and one bottom wall parallel to the upper surface 18A of the deposition ring 18. According to some embodiments, the cross section of the trench G may be a square.

As shown in FIG. 4C, the groove G may have a trapezoidal cross section including two inclined side walls and a bottom wall parallel to the upper surface 18A of the deposition ring 18, and an angle β formed on each of the inclined side walls and the bottom wall. between. According to some embodiments, the included angle β is between 45 degrees and 135 degrees. In other words, the cross section of the groove G may be a trapezoidal shape having a narrow upper and a lower width or a trapezoidal shape having an upper width and a lower width.

As shown in FIG. 4D, the groove G may have a U-shaped cross section including two vertical side walls and an arcuate bottom wall. According to some embodiments, the cross section of the trench G may be semi-circular.

According to some embodiments (eg, as shown in Figures 4A through 4D), the (maximum) width T of the trench G is between 0.5 mm and 5 mm, and the (maximum) depth D of the trench G is between 0.5 mm and Between 5 mm. For example, the cross section of the trench G according to an example may have a triangular shape, and the width G of the trench G is about 2.5 mm, and the depth D is about 1.5 mm.

According to some embodiments, the first and second trenches G1 and G2 may have the same or different cross-sectional shapes, and the first and second trenches G1 and G2 may have the same or different sizes (width T and depth D). .

Next, referring to FIG. 5A, in order to improve the adhesion of the deposited metal film, at least one material layer 182 may be further coated on the substrate 181 of the deposition ring 18 made of a metal material such as aluminum. According to some embodiments, the material layer 182 has a metal material such as titanium, cobalt, nickel, chromium, zinc or other metals, and can serve as a stress medium between the substrate 181 and a deposited film of different metal materials to improve the deposited metal film. Adhesion to the surface 18A above the deposition ring 18. In addition, a plurality of third trenches G3 and a plurality of fourth trenches G4 may be formed on the surface (ie, the upper surface 18A) of the material layer 182 located at the outermost portion of the deposition ring 18 by, for example, laser cutting or etching. The first and second trenches G1 and G2 (ie, the third and fourth trenches G3 and G4) on the upper surface 18A of the deposition ring 18 are obtained.

According to other embodiments, a plurality of third trenches G3 and a plurality of fourth trenches G4 (eg, 5B) may be formed on the surface of the substrate 181 of the deposition ring 18 by, for example, laser cutting or etching. As shown, then at least one material layer 182 is conformally coated onto the substrate 181 to obtain the surface 18A above the deposition ring 18 (i.e., the surface of the outermost material layer 182). First and second trenches G1 and G2. The positions and shapes of the first and second grooves G1 and G2 correspond to the positions and shapes of the third and fourth grooves G3 and G4, respectively.

Although not shown, according to some embodiments, the third and fourth grooves G3 and G4 may be formed on the surface of another material layer between the substrate 181 and the outermost material layer 182.

Similarly, a plurality of grooves G may be formed on the surface of the cover ring 19 for receiving the sputtered metal particles. For example, a plurality of grooves G (as shown in FIGS. 1 and 6) may be formed on the annular inclined surface 19B of the cover ring 19 toward the target member 20, including a plurality of first grooves G1 and a plurality of second portions. Groove G2. Similar to the design of the embodiment of the deposition ring 18 of FIGS. 2 and 3, the plurality of first grooves G1 may be arranged on the annular inclined surface 19B at equal intervals in a concentric circular shape with respect to the center of the cover ring 19 (not shown). The plurality of second grooves G1 may be arranged on the annular inclined surface 19B at equal intervals in a radial manner with respect to the center of the cover ring 19, and the first and second grooves G1 and G2 may intersect to form a mesh. pattern. As a result, the first and second trenches G1 and G2 can also greatly increase the contact surface area between the cover ring 19 and the deposited metal film, and improve the adhesion of the deposited metal film.

Figure 7 shows a partial top view of a cover ring 19 in accordance with further embodiments. As shown in Fig. 7, a portion of the first groove G1 on the annular inclined surface 19B of the cover ring 19 may have a different width, for example, near the inner edge 19C and the outer edge 19D of the annular inclined surface 19B of the cover ring 19. The width of the first trenches G1' may be greater than the width of the first trenches G1 located in the middle region of the annular inclined surface 19B of the cover ring 19. With this design, the adhesion of the deposited metal film can be further improved (the first groove G1 having an increased width can provide a similar anchoring effect to the metal film deposited on the annular inclined surface 19B) so that the cover ring 19 is The thickness of the metal film deposited on the annular inclined surface 19B can be increased without being easily peeled off, thereby prolonging the service life of the cover ring 19.

According to some embodiments, the first and second trenches G1 and G2 may also be formed on other surfaces of the cover ring 19 that will receive metal particles or films, such as the vertical inner side adjacent to the annular inclined surface 19B shown in FIG. Surface 19E and vertical outer surface 19F.

In addition, other configurations, cross-sectional changes, and/or fabrications of the first and second trenches G1 and G2 on the respective surfaces of the cover ring 19 are the same as or similar to the embodiment of the deposition ring 18 described above. Do not repeat them.

According to some embodiments, the engraved mesh pattern on the surface of the deposition ring 18 is different from the engraved mesh pattern on the surface of the cover ring 19.

The embodiment of the invention also provides a semiconductor manufacturing method 80, as shown in FIG. In operation 81, a substrate is placed in a process chamber. In operation 82, a deposition process is performed on the substrate, such as physical vapor deposition sputtering, evaporation, or other chemical vapor deposition processes. In operation 83, in the deposition process, one of the process parts in the process chamber is used to reduce process materials (eg, deposited particles of sputtered metal particles or other materials) deposited on one or more components in the process chamber, wherein One of the process parts has a plurality of first trenches and a plurality of second trenches on the surface, and the first trenches intersect the second trenches to form a mesh pattern.

It is to be understood that additional operations may be provided before, during, and after the methods in the above-described embodiments, and that some of the described operations may be substituted or eliminated for the methods in the different embodiments. For example, in some embodiments, semiconductor fabrication method 80 also includes supplying a working gas into the process chamber and converting the working gas into one of the plasma operations to assist in the deposition process. In some embodiments (as shown in FIG. 1), the substrate W is first placed over the carrier platform 11 and the deposition ring 18 in the process chamber 10, and the chamber mask 17 is mounted to the process through the flange 10D. Within the chamber 10, and through a carrier, the cover ring 19 is mounted and moved to a particular location within the process chamber 10, after which the drive mechanism 11B drives the load platform 11 up to the working position.

In summary, the disclosed embodiments have the advantage of forming an engraved surface on a surface for receiving process materials (eg, sputtered metal particles) through at least one process part (eg, a deposition ring or a cover ring) in the process chamber. The floral pattern (groove) increases the surface area of contact between the process part and the process material and improves the adhesion of the process material. As a result, the service life and reliability of the process parts can be increased, and the productivity and yield of the deposition process can be further improved.

In accordance with some embodiments, a process part is provided for use in a deposition process apparatus including a hollow annular structure, a plurality of first trenches, and a plurality of second trenches. The hollow annular structure has an annular surface. The first trench and the second trench are formed on the annular surface, and the first trench intersects the second trench to form a mesh pattern.

According to some embodiments, the first grooves are arranged on the annular surface at equal intervals in a concentric circular shape with respect to a center of one of the hollow annular structures. The second grooves are arranged on the annular surface at equal intervals in a radial form with respect to the center of the hollow annular structure.

According to some embodiments, the first and second grooves are evenly distributed over the annular surface or within one of the annular regions on the annular surface.

According to some embodiments, the width of the first groove adjacent one of the inner and outer edges of the annular surface is greater than the width of the first groove in the intermediate portion of one of the annular surfaces.

According to some embodiments, the width of the first and second grooves is between 0.5 mm and 5 mm, and the depth of the first and second grooves is between 0.5 mm and 5 mm.

According to some embodiments, the first and second grooves have a rectangular, square, triangular, trapezoidal, semi-circular or U-shaped cross section.

According to some embodiments, the hollow annular structure further has a substrate and at least one layer of material on the substrate. Wherein, one of the substrate or the material layer has a plurality of third trenches and a plurality of fourth trenches on the surface, corresponding to the first trenches and the second trenches, respectively.

According to some embodiments, the process component is a deposition ring or a cover ring.

In accordance with some embodiments, a semiconductor fabrication apparatus is provided that includes a process chamber and a process component. The process part is disposed in the process chamber for reducing process material deposition on an inner wall surface of the process chamber and/or a substrate carrying platform during the manufacturing process. The process part has a plurality of first trenches and a plurality of second trenches on a surface of one of the target components, and the first trenches intersect the second trenches to form a mesh pattern.

In accordance with some embodiments, a method of fabricating a semiconductor is provided that includes placing a substrate in a process chamber. The above method also includes performing a deposition process on the substrate. In addition, the above method includes reducing process material deposition on one or more components in the process chamber by one of the process parts in the process chamber during the deposition process, wherein one of the process parts has a plurality of first grooves on the surface The groove and the plurality of second grooves, and the first groove intersects the second groove to form a mesh pattern.

The embodiments and their advantages are described in detail above, and it is understood that various changes, substitutions and modifications may be made in the present disclosure without departing from the spirit and scope of the disclosure. Further, the scope of the present application is not intended to be limited to the specific embodiments of the process, the machine, the manufacture, the material composition, the tool, the method and the steps described in the specification. It will be readily apparent to those skilled in the art from this disclosure that, in accordance with the present disclosure, substantially the same functions or implementations as those of the corresponding embodiments described herein may be utilized. The resulting process, machine, manufacturing, material composition, tool, method or procedure. Therefore, the scope of the appended claims is intended to cover such processes, machines, manufacture, compositions of matter, tools, methods or steps. In addition, each patent application scope constitutes a separate embodiment, and combinations of different application patent scopes and embodiments are within the scope of the disclosure.

Claims (10)

 A process part for a deposition process apparatus, comprising: a hollow annular structure having an annular surface; and a plurality of first grooves and a plurality of second grooves formed on the annular surface, and the first The trench intersects the second trenches to form a mesh pattern.    The process part of claim 1, wherein the first grooves are arranged on the annular surface at equal intervals in a concentric circular shape with respect to a center of one of the hollow annular structures, and the second grooves are Arranged on the annular surface at equal intervals in a radial form with respect to the center of the circle.    The process part of claim 2, wherein the first and second grooves are evenly distributed on the annular surface or in an annular region on the annular surface.    The process part of claim 2, wherein a width of the first grooves adjacent to an inner edge and an outer edge of the annular surface is greater than the first ones located in an intermediate portion of the annular surface The width of the groove.    The process part of claim 1, wherein the first and second grooves have a width of between 0.5 mm and 5 mm, and the first and second grooves have a depth of 0.5 Between mm and 5 mm.    The process part of claim 1, wherein the first and second grooves have a rectangular, square, triangular, trapezoidal, semi-circular or U-shaped cross section.    The process part according to any one of claims 1 to 6, wherein the hollow annular structure further has a substrate and at least one material layer on the substrate, wherein the substrate or one of the material layers The surface has a plurality of third trenches and a plurality of fourth trenches respectively corresponding to the first trenches and the second trenches.    The process part of claim 1, wherein the process part is a deposition ring or a cover ring.    A semiconductor manufacturing apparatus comprising: a process chamber; and a process part disposed in the process chamber for reducing deposition of process material on an inner wall surface of the process chamber and/or substrate loading during the manufacturing process On the platform, the process part has a plurality of first trenches and a plurality of second trenches on a surface of one of the target components, and the first trenches intersect the second trenches to form a mesh Shaped pattern.    A semiconductor manufacturing method comprising: placing a substrate in a process chamber; performing a deposition process on the substrate; and in the deposition process, reducing process material deposition in the process by processing a part of the process chamber One or more components in the chamber, wherein one surface of the process component has a plurality of first trenches and a plurality of second trenches, and the first trenches intersect with the second trenches to form A mesh pattern.