TW201913225A - Target fuel generator and method for supplying target fuel - Google Patents

Target fuel generator and method for supplying target fuel Download PDF

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TW201913225A
TW201913225A TW106130430A TW106130430A TW201913225A TW 201913225 A TW201913225 A TW 201913225A TW 106130430 A TW106130430 A TW 106130430A TW 106130430 A TW106130430 A TW 106130430A TW 201913225 A TW201913225 A TW 201913225A
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Taiwan
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target fuel
nozzle
nozzle head
flow path
turntable
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TW106130430A
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Chinese (zh)
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TWI646387B (en
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鐘仁陽
謝劼
簡上傑
陳立銳
鄭博中
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台灣積體電路製造股份有限公司
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Abstract

A target fuel generator is provided according to some embodiments of the disclosure. The target fuel generator includes a storage assembly having a flow path. The target fuel generator also includes a nozzle assembly. The nozzle assembly is rotatably connected to the storage assembly from a first rotation angel to a second rotation angel. The nozzle assembly includes a first nozzle head and a second nozzle head. In the first rotation angel, the first nozzle head is connected to the flow path and the second is disengaged from the flow path, and in the second rotation angel, the second nozzle head is connected to the flow path and the first nozzle head is disengaged from the flow path.

Description

標靶燃料產生器及供應標靶燃料的方法  Target fuel generator and method for supplying target fuel  

本發明實施例關於一種半導體晶圓生產設備中用於供應標靶燃料以產生放射光束的標靶燃料產生器及供應標靶燃料的方法。 Embodiments of the present invention relate to a target fuel generator for supplying a target fuel to generate a radiation beam and a method of supplying a target fuel in a semiconductor wafer production apparatus.

半導體積體電路工業已歷經蓬勃發展的階段。積體電路燃料及設計在技術上的進步使得每一代生產的積體電路變得比先前生產的積體電路更小且其電路也變得更複雜。在積體電路發展的進程中,功能性密度(例如:每一個晶片區域中內連接裝置的數目)已經普遍增加,而幾何尺寸(例如:製程中所能創造出最小的元件(或線路))則是普遍下降。這種微縮化的過程通常可藉由增加生產效率及降低相關支出提供許多利益。 The semiconductor integrated circuit industry has experienced a booming stage. Technological advances in integrated circuit fuels and designs have made the integrated circuits produced in each generation smaller and more complex than previously produced integrated circuits. In the development of integrated circuits, the functional density (for example, the number of interconnects in each wafer area) has generally increased, while the geometry (for example, the smallest component (or line) can be created in the process) It is a general decline. This process of miniaturization often provides many benefits by increasing production efficiency and reducing related expenses.

然而,此種微縮化也增加了積體電路加工和製造上的複雜度。為了實現這樣的進展,積體電路加工和製造上也需要有相同的進步。 However, such miniaturization also increases the complexity of processing and manufacturing of integrated circuits. In order to achieve such progress, the same progress is required in the processing and manufacturing of integrated circuits.

光微影技術是一種利用光照射具有圖案的主光罩來將圖案轉印到覆蓋在半導體基板上感光燃料上的製程。在半導體工業的歷史上,已藉由減小光學微影輻射源之曝光波長改 良光微影解析度來實現更小的積體晶片的最小特徵尺寸。在較高解析度的光微影技術中,極紫外線(Extreme ultraviolet;EUV)微影術使用具有10nm與130nm之間之曝光波長的極紫外線(EUV)光,是對於新興技術節點(例如,32nm、22nm、14nm等)具有前景的下一代光微影解決方案。 The photolithography technique is a process of transferring a pattern onto a photosensitive fuel covered on a semiconductor substrate by irradiating a patterned main mask with light. In the history of the semiconductor industry, the minimum feature size of smaller integrated wafers has been achieved by reducing the exposure wavelength of the optical lithographic radiation source to improve optical lithography resolution. In higher resolution photolithography, Extreme ultraviolet (EUV) lithography uses extreme ultraviolet (EUV) light with an exposure wavelength between 10 nm and 130 nm, which is for emerging technology nodes (eg, 32 nm) , 22nm, 14nm, etc.) Promising next-generation photolithography solution.

雖然現有的光微影技術通常已經足以實現預期目的,但仍不能在所有方面完全滿足。 Although existing photolithography techniques are generally sufficient for the intended purpose, they are not fully satisfactory in all respects.

本發明部分實施例提供一種標靶燃料產生器。標靶燃料產生器包括一儲存組件。儲存組件具有一流道。標靶燃料產生器更包括一噴嘴組件。噴嘴組件,以可旋轉於一第一旋轉位置與一第二旋轉位置的方式連結儲存組件。並且,噴嘴組件包括一第一噴嘴頭以及一第二噴嘴頭。在第一旋轉位置上,第一噴嘴頭連結流道且第二噴嘴頭與流道分離,並且在第二旋轉位置上,第二噴嘴頭連通流道且第一噴嘴頭與流道分離。 Some embodiments of the present invention provide a target fuel generator. The target fuel generator includes a storage assembly. The storage components are superb. The target fuel generator further includes a nozzle assembly. The nozzle assembly couples the storage assembly in a manner rotatable to a first rotational position and a second rotational position. And, the nozzle assembly includes a first nozzle head and a second nozzle head. In the first rotational position, the first nozzle tip joins the flow channel and the second nozzle tip is separated from the flow channel, and in the second rotational position, the second nozzle tip communicates with the flow channel and the first nozzle tip is separated from the flow channel.

本發明部分實施例提供一種供應一標靶燃料的方法。上述方法包括連結設置於一轉盤的一第一噴嘴頭至一儲存組件的一流道。上述方法更包括通過儲存組件的流道以及第一噴嘴頭供應一標靶燃料進入一激發區。上述方法也包括監測來自第一噴嘴頭的標靶燃料在激發區中的特性,並根據監測結果產生一偵測訊號。另外,上述方法包括當偵測訊號超過一門檻值時,停止供應來自第一噴嘴頭的標靶燃料。上述方法還包括旋轉轉盤,以連結設置於轉盤的一第二噴嘴頭至儲存組件的流道。上述方法更包括通過儲存組件的流道以及第二噴嘴頭供應 標靶燃料進入激發區。 Some embodiments of the present invention provide a method of supplying a target fuel. The method includes joining a first nozzle head disposed in a turntable to a first-class track of a storage assembly. The method further includes supplying a target fuel into an excitation zone through the flow path of the storage assembly and the first nozzle tip. The method also includes monitoring the characteristics of the target fuel from the first nozzle tip in the excitation zone and generating a detection signal based on the monitoring result. Additionally, the method includes stopping supplying the target fuel from the first nozzle tip when the detection signal exceeds a threshold. The method further includes rotating the turntable to join a second nozzle head disposed on the turntable to the flow path of the storage assembly. The above method further includes supplying the target fuel into the excitation region through the flow path of the storage assembly and the second nozzle tip.

10‧‧‧曝光系統 10‧‧‧Exposure system

12‧‧‧放射源 12‧‧‧ Radioactive sources

14‧‧‧聚焦光學組件 14‧‧‧Focus optical components

16‧‧‧光罩平台 16‧‧‧mask platform

18‧‧‧光罩 18‧‧‧Photomask

20‧‧‧投影光學盒 20‧‧‧Projection optical box

22‧‧‧半導體基板 22‧‧‧Semiconductor substrate

24‧‧‧基板平台 24‧‧‧Substrate platform

30‧‧‧標靶燃料產生器 30‧‧‧Target fuel generator

31‧‧‧儲存組件 31‧‧‧Storage components

310‧‧‧流道 310‧‧‧ flow path

32‧‧‧儲存槽 32‧‧‧ Storage tank

321‧‧‧上開孔 321‧‧‧Open hole

322‧‧‧下開孔 322‧‧‧ opening

323‧‧‧驅動氣體 323‧‧‧ driving gas

33‧‧‧過濾器 33‧‧‧Filter

331‧‧‧過濾通道 331‧‧‧Filter channel

332‧‧‧多孔薄膜 332‧‧‧Porous film

334‧‧‧端部 334‧‧‧End

336‧‧‧端部 336‧‧‧End

34‧‧‧導引件 34‧‧‧Guide

341‧‧‧導引通道 341‧‧‧ Guide channel

344‧‧‧端部 344‧‧‧End

346‧‧‧端部 346‧‧‧End

35‧‧‧噴嘴組件 35‧‧‧Nozzle assembly

36‧‧‧轉盤 36‧‧‧ Turntable

365‧‧‧支架 365‧‧‧ bracket

370‧‧‧管體 370‧‧‧ tube body

371‧‧‧噴嘴頭(第一噴嘴頭) 371‧‧‧Nozzle head (first nozzle head)

372‧‧‧噴嘴頭(第二噴嘴頭) 372‧‧‧Nozzle head (second nozzle head)

373‧‧‧噴嘴頭(第三噴嘴頭) 373‧‧‧Nozzle head (third nozzle head)

374‧‧‧噴嘴頭(第四噴嘴頭) 374‧‧‧Nozzle head (fourth nozzle head)

375‧‧‧噴嘴頭(第五噴嘴頭) 375‧‧・Nozzle head (fifth nozzle head)

38‧‧‧致動器 38‧‧‧Actuator

391‧‧‧旋轉驅動器 391‧‧‧Rotary drive

392‧‧‧轉軸 392‧‧‧ shaft

40‧‧‧第一雷射源 40‧‧‧First laser source

42‧‧‧預脈衝雷射 42‧‧‧Pre-pulse laser

44‧‧‧窗 44‧‧‧ window

50‧‧‧第二雷射源 50‧‧‧second laser source

52‧‧‧主脈衝雷射 52‧‧‧ main pulse laser

54‧‧‧窗 54‧‧‧ window

70‧‧‧回饋裝置 70‧‧‧Return device

71‧‧‧分析器 71‧‧‧Analyzer

72‧‧‧標靶燃料位置偵測器 72‧‧‧Target fuel position detector

73‧‧‧標靶燃料控制器 73‧‧‧Target fuel controller

80‧‧‧燃料物質 80‧‧‧fuel substances

81‧‧‧激發區 81‧‧‧Excitation zone

82‧‧‧標靶燃料 82‧‧‧Target fuel

83‧‧‧放射光束 83‧‧‧ radiation beam

100‧‧‧方法 100‧‧‧ method

101-107‧‧‧操作 101-107‧‧‧ operation

α‧‧‧既定角度 ‧‧‧‧A fixed angle

C‧‧‧中心 C‧‧‧ Center

L‧‧‧長軸 L‧‧‧ long axis

R‧‧‧旋轉軸 R‧‧‧Rotary axis

第1圖顯示根據本發明部分實施例的曝光系統的示意圖。 Figure 1 shows a schematic diagram of an exposure system in accordance with some embodiments of the present invention.

第2圖顯示根據本發明部分實施例的放射源的示意圖。 Figure 2 shows a schematic diagram of a radiation source in accordance with some embodiments of the present invention.

第3圖顯示根據本發明部分實施例的標靶燃料產生器的示意圖。 Figure 3 shows a schematic diagram of a target fuel generator in accordance with some embodiments of the present invention.

第4圖顯示根據本發明部分實施例的標靶燃料產生器的部分元件的示意圖。 Figure 4 shows a schematic diagram of some of the elements of a target fuel generator in accordance with some embodiments of the present invention.

第5圖顯示根據本發明部分實施例的噴嘴組件的示意圖。 Figure 5 shows a schematic view of a nozzle assembly in accordance with some embodiments of the present invention.

第6圖顯示本發明部分實施例的供應標靶燃料的方法的流程圖。 Figure 6 is a flow chart showing a method of supplying a target fuel in accordance with some embodiments of the present invention.

第7圖顯示本發明部分實施例的供應標靶燃料的方法的操作之一的示意圖,其中噴嘴組件設置於第一旋轉位置,第一噴嘴頭連結流道。 Figure 7 is a schematic illustration of one of the operations of a method of supplying a target fuel in accordance with some embodiments of the present invention, wherein the nozzle assembly is disposed in a first rotational position and the first nozzle head is coupled to the flow passage.

第8圖顯示本發明部分實施例的供應標靶燃料的方法的操作之一的示意圖,其中噴嘴組件設置於第二旋轉位置,第二噴嘴頭連結流道。 Figure 8 is a schematic illustration of one of the operations of a method of supplying a target fuel in accordance with some embodiments of the present invention, wherein the nozzle assembly is disposed in a second rotational position and the second nozzle head is coupled to the flow passage.

以下的揭露內容提供許多不同的實施例或範例,以實施本發明的不同特徵。而本說明書以下的揭露內容是敘述各個構件及其排列方式的特定範例,以求簡化發明的說明。當然,這些特定的範例並非用以限定本發明。例如,若是本說明書以下的揭露內容敘述了將一第一特徵形成於一第二特徵之 上或上方,即表示其包含了所形成的上述第一特徵與上述第二特徵是直接接觸的實施例,亦包含了尚可將附加的特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與上述第二特徵可能未直接接觸的實施例。另外,本發明的說明中不同範例可能使用重複的參考符號及/或用字。這些重複符號或用字係為了簡化與清晰的目的,並非用以限定各個實施例及/或所述外觀結構之間的關係。 The following disclosure provides many different embodiments or examples to implement various features of the invention. The disclosure of the present specification is a specific example of the various components and their arrangement in order to simplify the description of the invention. Of course, these specific examples are not intended to limit the invention. For example, if the disclosure of the present specification describes forming a first feature on or above a second feature, that is, it includes an embodiment in which the formed first feature is in direct contact with the second feature. Also included is an embodiment in which additional features are formed between the first feature and the second feature described above, such that the first feature and the second feature may not be in direct contact. In addition, different examples in the description of the invention may use repeated reference symbols and/or words. These repeated symbols or words are not intended to limit the relationship between the various embodiments and/or the appearance structures for the purpose of simplicity and clarity.

再者,為了方便描述圖式中一元件或特徵部件與另一(複數)元件或(複數)特徵部件的關係,可使用空間相關用語,例如“在...之下”、“下方”、“下部”、“上方”、“上部”及類似的用語等。可以理解的是,除了圖式所繪示的方位之外,空間相關用語涵蓋使用或操作中的裝置的不同方位。所述裝置也可被另外定位(例如,旋轉90度或者位於其他方位),並對應地解讀所使用的空間相關用語的描述。可以理解的是,在所述方法之前、期間及之後,可提供額外的操作,且在某些方法實施例中,所述的某些操作可被替代或省略。 Furthermore, for convenience of describing the relationship of one element or feature in the drawings to another (plural) element or (complex) feature, space-related terms such as "below", "below", "lower", "above", "upper" and similar terms. It will be understood that the spatially relative terms encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. The device may also be additionally positioned (eg, rotated 90 degrees or at other orientations) and the description of the spatially relevant terms used may be interpreted accordingly. It will be appreciated that additional operations may be provided before, during, and after the method, and in some method embodiments, some of the operations may be substituted or omitted.

應注意的是,此處所討論的實施例可能未必敘述出可能存在於結構內的每一個部件或特徵。舉例來說,圖式中可能省略一個或多個部件,例如當部件的討論說明可能足以傳達實施例的各個樣態時可能將其從圖式中省略。再者,此處所討論的方法實施例可能以特定的進行順序來討論,然而在其他方法實施例中,可以以任何合理的順序進行。 It should be noted that the embodiments discussed herein may not necessarily describe every component or feature that may be present within the structure. For example, one or more components may be omitted from the drawings, such as may be omitted from the drawings when the description of the components may be sufficient to convey various aspects of the embodiments. Furthermore, the method embodiments discussed herein may be discussed in a particular order, but in other method embodiments, the order may be performed in any reasonable order.

在本發明實施例中描述的先進微影製程、方法及材料可以適用於許多應用中,包括鰭式場效電晶體(fin-type field effect transistor,FinFET)。例如,鰭結構可能被圖案化以在複數結構之間產生相對較小的間隔,而本發明實施例係適合應用於此。再者,本發明實施例可以應用在用來形成鰭式場效電晶體之鰭結構的間隙壁(spacer)的製程。 The advanced lithography processes, methods, and materials described in the embodiments of the present invention can be applied to many applications, including fin-type field effect transistors (FinFETs). For example, fin structures may be patterned to create relatively small spacing between complex structures, and embodiments of the invention are suitable for use herein. Furthermore, embodiments of the present invention can be applied to a process for forming a spacer for a fin structure of a fin field effect transistor.

第1圖顯示根據本發明部分實施例的曝光系統10的示意圖。在部分實施例中,曝光系統10包括放射源12、聚焦光學組件14、光罩平台16、投影光學盒20及基板平台24。曝光系統10的元件數量可以增加或減少,並不受本發明實施例所限制。 Figure 1 shows a schematic diagram of an exposure system 10 in accordance with some embodiments of the present invention. In some embodiments, exposure system 10 includes a radiation source 12, a focusing optics assembly 14, a reticle stage 16, a projection optics housing 20, and a substrate platform 24. The number of components of the exposure system 10 can be increased or decreased and is not limited by the embodiments of the present invention.

放射源12配置用於產生高能量放射光束。在部分實施例中,放射源12所產生的高能量放射光束包括波長介於約1nm至約100nm的高能量放射光束。在部分實施例中,放射源12所產生的高能量放射光束包括波長約為13.5nm的極紫外光放射光束。因此,放射源12亦可稱為極紫外光放射源12。在部分實施例中,放射源12利用雷射產生電漿(laser-produced plasma,LPP)之機構來產生極紫外光放射光束,之後將進一步說明。 The source 12 is configured to generate a beam of high energy radiation. In some embodiments, the high energy radiation beam produced by the source 12 comprises a high energy radiation beam having a wavelength between about 1 nm and about 100 nm. In some embodiments, the high energy radiation beam produced by the source 12 comprises an extreme ultraviolet radiation beam having a wavelength of about 13.5 nm. Therefore, the source 12 can also be referred to as an extreme ultraviolet radiation source 12. In some embodiments, the source 12 utilizes a laser-produced plasma (LPP) mechanism to generate an extreme ultraviolet radiation beam, as will be further described below.

聚焦光學組件14配置用於將放射源12的高能量放射光束導向固定於光罩平台16的光罩18。在部分實施例中,聚焦光學組件14包括各種折射光學元件,例如一單一鏡片或一具有多種鏡片(波帶片)或反射光學件(對於極紫外光曝光系統)的鏡片系統,例如一單一反射鏡或一具有多種反射鏡的反射鏡系統。 The focusing optics assembly 14 is configured to direct the high energy radiation beam of the source 12 to the reticle 18 that is affixed to the reticle stage 16. In some embodiments, the focusing optics assembly 14 includes various refractive optical elements, such as a single lens or a lens system having multiple lenses (band slices) or reflective optics (for extreme ultraviolet exposure systems), such as a single reflection. A mirror or a mirror system with multiple mirrors.

光罩平台16配置用於固定光罩18。在一些實施例 中,光罩平台16包括靜電吸盤(e-chuck)以固定光罩18。在部分實施例中,曝光系統是保持在真空環境中,以避免極紫外光因受氣體分子所吸收而造成極紫外光的強度損失。因此,靜電吸盤所產生的靜電力可以不受真空環境影響,穩定固定光罩18於光罩平台16之上。 The reticle stage 16 is configured to secure the reticle 18. In some embodiments, the reticle stage 16 includes an electrostatic chuck (e-chuck) to secure the reticle 18. In some embodiments, the exposure system is maintained in a vacuum environment to avoid extreme intensity loss of extreme ultraviolet light due to absorption by gas molecules. Therefore, the electrostatic force generated by the electrostatic chuck can be stably applied to the reticle stage 16 without being affected by the vacuum environment.

在曝光系統10為一極紫外光曝光系統的例子中,光罩18為一反射型光罩。光罩18包括具有合適材料的基板,例如低熱膨脹性之燃料(LTEM)或熔融石英。在部分實施例中,低熱膨脹性之燃料包括TiO2摻雜SiO2,或其他低膨脹性之合適燃料。在部分實施例中,光罩18包括一複合反射複合層(ML)沉積於基板上。複合層包括複數個薄膜對(film pairs),例如鉬-矽(Mo/Si)薄膜對。舉例而言,在每個薄膜對中,鉬層在矽層之上或之下。或者,複合層可包括鉬-鈹(Mo/Be)薄膜對,或配置其他合適燃料以高度反射極紫外光線。 In the example where the exposure system 10 is an extreme ultraviolet exposure system, the reticle 18 is a reflective reticle. Photomask 18 includes a substrate having a suitable material, such as low thermal expansion fuel (LTEM) or fused silica. In some embodiments, the low thermal expansion fuel comprises TiO 2 doped SiO 2 , or other suitable fuel of low expansion. In some embodiments, the reticle 18 includes a composite reflective composite layer (ML) deposited on the substrate. The composite layer comprises a plurality of film pairs, such as molybdenum-niobium (Mo/Si) film pairs. For example, in each film pair, the molybdenum layer is above or below the ruthenium layer. Alternatively, the composite layer may comprise a Mo/Be film pair or other suitable fuel to highly reflect extreme ultraviolet light.

光罩18更可包括一覆蓋層設置於複合層上以提供保護,例如釕(Ru)。光罩18更可包括一吸收層設置於複合層上,例如氮化鉭硼(TaBN)層。吸收層被圖案化以定義為一積體電路之層。或者,另一反射層可沉積於複合層上且被圖案化以定義一積體電路之層,從而形成一極紫外光相偏移光罩。 The mask 18 may further include a cover layer disposed on the composite layer to provide protection, such as ruthenium (Ru). The photomask 18 may further include an absorbing layer disposed on the composite layer, such as a boron nitride boron nitride (TaBN) layer. The absorber layer is patterned to define a layer of integrated circuitry. Alternatively, another reflective layer can be deposited on the composite layer and patterned to define a layer of integrated circuitry to form an extreme ultraviolet phase shift mask.

投影光學盒20(POB)配置用於將來自光罩18的高能量光束導引至放置有半導體基板22的基板平台24,以形成光罩18的圖案於半導體基板22之上。在部分實施例中,投影光學盒20具有折射光學件(例如在紫外光曝光系統中)或其他反射光學件(例如在極紫外光曝光系統中)。聚焦光學組件14和投 影光學盒20統稱為曝光系統10之一光學模組。 Projection optics box 20 (POB) is configured to direct a high energy beam from reticle 18 to substrate platform 24 on which semiconductor substrate 22 is placed to form a pattern of reticle 18 over semiconductor substrate 22. In some embodiments, the projection optics 20 has refractive optics (eg, in an ultraviolet light exposure system) or other reflective optics (eg, in an extreme ultraviolet exposure system). The focusing optics assembly 14 and the projection optics housing 20 are collectively referred to as an optical module of the exposure system 10.

曝光系統10亦包括基板平台24以固定半導體基板22。根據部分實施例,半導體基板22由矽、鍺或其他半導體材料所製成。根據部分實施例,半導體基板22由複合半導體所製成,如碳化矽(SiC)、砷化鎵(GaAs)、砷化銦(InAs)或磷化銦(InP)。根據部分實施例,半導體基板22由合金半導體所製成,如矽鍺(SiGe)、矽鍺碳(SiGeC)、磷砷化鎵(GaAsP)或磷化銦鎵(GaInP)。根據部分實施例,半導體基板22包括一晶膜層。舉例來說,半導體基板22具有一晶膜層覆蓋於大型半導體(bulk semiconductor)上。根據部分實施例,半導體基板22可為矽絕緣體(silicon-on-insulator;SOI)或鍺絕緣體(germanium-on-insulator;GOI)基板。 The exposure system 10 also includes a substrate platform 24 to secure the semiconductor substrate 22. According to some embodiments, the semiconductor substrate 22 is made of tantalum, niobium or other semiconductor material. According to some embodiments, the semiconductor substrate 22 is made of a composite semiconductor such as SiC, GaAs, InAs, or InP. According to some embodiments, the semiconductor substrate 22 is made of an alloy semiconductor such as germanium (SiGe), germanium carbon (SiGeC), gallium arsenide (GaAsP) or indium gallium phosphide (GaInP). According to some embodiments, the semiconductor substrate 22 includes a crystalline film layer. For example, the semiconductor substrate 22 has a crystalline film layer overlying a bulk semiconductor. According to some embodiments, the semiconductor substrate 22 may be a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI) substrate.

半導體基板22上可包括有多個裝置元件。舉例而言,形成於半導體基板22上的裝置元件可包括一電晶體,例如:金氧半導體場效電晶體(metal oxide semiconductor field effect transistors(MOSFET))、互補式金氧半導體電晶體(complementary metal oxide semiconductor(CMOS)transistors)、雙載子接面電晶體(bipolar junction transistors (BJT))、高電壓電晶體、高頻電晶體、P型場效電晶體(p-channel and/or n-channel field-effect transistors(PFET))或者P型場效電晶體(n-channel field-effect transistors(NFET)等,以及或者其他元件。半導體基板22上的多個裝置元件可經過多個加工製程,例如沈積、蝕刻、離子植入、光刻、退火、以及或者其他製程。半導體基板22上塗佈有對高能 量放射光束敏感的光阻層,例如本實施例中之極紫外光線。 A plurality of device elements can be included on the semiconductor substrate 22. For example, the device component formed on the semiconductor substrate 22 may include a transistor such as a metal oxide semiconductor field effect transistor (MOSFET) or a complementary metal oxide semiconductor transistor (complementary metal). Oxide semiconductor (CMOS) transistor, bipolar junction transistor (BJT), high voltage transistor, high frequency transistor, P-type field effect transistor (p-channel and/or n-channel) Field-effect transistors (PFET) or n-channel field-effect transistors (NFETs), etc., or other components. Multiple device components on the semiconductor substrate 22 may undergo multiple processing processes, such as Deposition, etching, ion implantation, photolithography, annealing, and or other processes. The semiconductor substrate 22 is coated with a photoresist layer that is sensitive to high energy radiation beams, such as the extreme ultraviolet light in this embodiment.

第2圖顯示根據本發明部分實施例的放射源12的示意圖。在部分實施例中,放射源12包括一標靶燃料產生器30、一第一雷射源40、一第二雷射源50、一聚光鏡60及一控制裝置70。放射源12的元件數量可以增加或減少,並不受本發明實施例所限制。 Figure 2 shows a schematic diagram of a radiation source 12 in accordance with some embodiments of the present invention. In some embodiments, the radiation source 12 includes a target fuel generator 30, a first laser source 40, a second laser source 50, a concentrating mirror 60, and a control device 70. The number of components of the source 12 can be increased or decreased and is not limited by the embodiments of the present invention.

標靶燃料產生器30配置用於儲存一燃料物質80(第3圖)並將燃料物質80轉換成具有適當形式的標靶燃料82。燃料物質80可包括在電漿狀態下可放出波長介於EUV範圍的放射光束的任何燃料,例如,元素錫(Sn)、一錫化合物(例如:SnBr4、SnBr2、SnH4)、一錫合金(例如:錫-鎵合金、錫-銦合金、錫-銦-鎵合金)、或這些合金之任一組合來使用。燃料物質80亦可包括雜質,例如非標靶粒子。關於標靶燃料產生器30的結構特徵將於後方關於第3-5圖的說明中進一步詳述。 The target fuel generator 30 is configured to store a fuel substance 80 (Fig. 3) and convert the fuel material 80 into a target fuel 82 having a suitable form. The fuel substance 80 may include any fuel that emits a radiation beam having a wavelength in the EUV range in a plasma state, for example, elemental tin (Sn), a tin compound (eg, SnBr4, SnBr2, SnH4), a tin alloy (eg, : tin-gallium alloy, tin-indium alloy, tin-indium-gallium alloy, or any combination of these alloys. Fuel material 80 may also include impurities, such as non-target particles. The structural features of the target fuel generator 30 will be further detailed later in the description of Figures 3-5.

第一雷射源40配置用於產生一預脈衝雷射42。第二雷射源50配置用於產生一主脈衝雷射52。根據目前的實施例,預脈衝雷射42所具有的能量較主脈衝雷射52所具有的能量小。預脈衝雷射42的能量不足以使標靶燃料82轉換為電漿(例如,小於11.9MeV),但可使標靶燃料82變形(例如,增加錫液滴之靶尺寸/直徑),進而提高標靶燃料82受主脈衝雷射52照射後所放出的高強度光線的放射量。 The first laser source 40 is configured to generate a pre-pulse laser 42. The second laser source 50 is configured to generate a main pulse laser 52. According to the current embodiment, the pre-pulse laser 42 has a lower energy than the main pulse laser 52. The energy of the pre-pulse laser 42 is not sufficient to convert the target fuel 82 to a plasma (eg, less than 11.9 MeV), but can deform the target fuel 82 (eg, increase the target size/diameter of the tin droplets), thereby increasing The amount of high-intensity light emitted by the target fuel 82 after being irradiated by the main pulse laser 52.

在部分實施例中,第一雷射源40包括二氧化碳(CO2)雷射源,但本發明實施例並不僅此為限。在另一實施 例中,第一雷射源40包括釹參雜的釔鋁石榴石(neodymium-doped yttrium aluminum Yttrium aluminum garnet garnet(Nd:YAG))雷射源。在部分實施例中,第二雷射源50包括二氧化碳(CO2)雷射源。 In some embodiments, the first laser source 40 includes a carbon dioxide (CO2) laser source, but embodiments of the invention are not limited thereto. In another embodiment, the first laser source 40 comprises a neodymium-doped yttrium aluminum Yttrium aluminum garnet garnet (Nd: YAG) laser source. In some embodiments, the second laser source 50 includes a carbon dioxide (CO2) laser source.

在多個實施例中,預脈衝雷射42的光束尺度約為100μm或更小,並且主脈衝雷射52的光束尺度約為200-300μm,例如225μm。預脈衝雷射42以及主脈衝雷射52具有特定驅動能量以滿足半導體基板量產的需求。舉例而言,預脈衝雷射42具2千瓦(kW)的驅動能量,並且主脈衝雷射52具19千瓦的驅動能量。在多個實施例中,預脈衝雷射42以及主脈衝雷射52的總驅動能量至少為20千瓦,例如27千瓦。然而,應當理解的是本發明實施例並不僅此為限。 In various embodiments, the beam size of the pre-pulse laser 42 is about 100 [mu]m or less, and the beam size of the main pulse laser 52 is about 200-300 [mu]m, such as 225 [mu]m. The pre-pulse laser 42 and the main pulse laser 52 have specific drive energies to meet the demand for mass production of the semiconductor substrate. For example, the pre-pulse laser 42 has a drive energy of 2 kilowatts (kW) and the main pulse laser 52 has a drive energy of 19 kilowatts. In various embodiments, the total drive energy of the pre-pulse laser 42 and the main pulse laser 52 is at least 20 kilowatts, such as 27 kilowatts. However, it should be understood that the embodiments of the invention are not limited thereto.

聚光鏡60配置用於將標靶燃料82受激發後所產生的高能量放射光束83反射至光罩18(第1圖)所放置的位置。在部分實施例中,聚光鏡60包括窗(或鏡片)44、54,以供預脈衝雷射42以及主脈衝雷射52通過並進入至激發區81。窗44、54可由實質為透明的適當材質所製成,以利預脈衝雷射42以及主脈衝雷射52通過。聚光鏡60可包括一橢球面鏡,且橢球面鏡在激發區81具有一第一焦點且在光罩18(第1圖)所放置的位置(亦稱為中間焦點)具有一第二焦點。 The concentrating mirror 60 is configured to reflect the high-energy radiation beam 83 generated after the target fuel 82 is excited to a position at which the reticle 18 (Fig. 1) is placed. In some embodiments, concentrating mirror 60 includes windows (or lenses) 44, 54 for passage of pre-pulse laser 42 and main pulsed laser 52 and into excitation zone 81. The windows 44, 54 can be made of a suitable material that is substantially transparent to facilitate passage of the pre-pulse laser 42 and the main pulsed laser 52. The concentrating mirror 60 can include an ellipsoidal mirror having a first focus at the excitation zone 81 and a second focus at a location where the reticle 18 (Fig. 1) is placed (also referred to as an intermediate focus).

回饋裝置70配置用於控制調整標靶燃料產生器30的作動。在部分實施例中,回饋裝置70包括一分析器71、一標靶燃料位置偵測器72、及一標靶燃料控制器73。在部分實施例中,標靶燃料位置偵測器72配置用於監測標靶燃料82的位置或 者軌跡,並根據監測的結果產生一對應標靶燃料82的位置或者軌跡的監測影像至分析器71。 The feedback device 70 is configured to control the actuation of the target fuel generator 30. In some embodiments, the feedback device 70 includes an analyzer 71, a target fuel position detector 72, and a target fuel controller 73. In some embodiments, the target fuel position detector 72 is configured to monitor the position or trajectory of the target fuel 82 and generate a monitoring image corresponding to the position or trajectory of the target fuel 82 to the analyzer 71 based on the result of the monitoring. .

舉例而言,標靶燃料位置偵測器72包括一影像感測器,例如:電荷耦合元件(charge coupled device,CCD)或互補式金氧半導體感測元件(complementary metal oxide semiconductor sensor,CMOS sensor)等。標靶燃料位置偵測器72產生關於標靶燃料82的照片或影像並將照片或影像的監測影像回傳至分析器71。 For example, the target fuel position detector 72 includes an image sensor, such as a charge coupled device (CCD) or a complementary metal oxide semiconductor sensor (CMOS sensor). Wait. The target fuel position detector 72 generates a photo or image of the target fuel 82 and transmits the monitored image of the photo or image back to the analyzer 71.

分析器71配置用於分析來自標靶燃料位置偵測器72的監測影像並根據監測影像的分析結果輸出一偵測訊號至標靶燃料控制器73。舉例而言,分析器71包括一影像分析處理器,分析器71接收來自標靶燃料位置偵測器72的監測影像並與一參考照片或一參考影像進行比對。分析器71可計算標靶燃料82的微滴的位置及軌跡,並且可逐滴計算每一微滴位置誤差,進而判斷標靶燃料82的位置誤差或者軌跡誤差。 The analyzer 71 is configured to analyze the monitoring image from the target fuel position detector 72 and output a detection signal to the target fuel controller 73 based on the analysis result of the monitoring image. For example, the analyzer 71 includes an image analysis processor that receives the monitored image from the target fuel position detector 72 and compares it with a reference photo or a reference image. The analyzer 71 can calculate the position and trajectory of the droplets of the target fuel 82, and can calculate each droplet position error drop by drop, thereby determining the position error or trajectory error of the target fuel 82.

標靶燃料控制器73配置用於根據來自分析器71的偵測訊號控制標靶燃料產生器30的作動,以改變標靶燃料82的供應誤差。舉例而言,標靶燃料控制器73在標靶燃料產生器30釋放標靶燃料82時修改微滴的釋放時間點,以修正標靶燃料82的位置誤差或軌跡誤差。或者,標靶燃料控制器73在標靶燃料產生器30釋放標靶燃料82前,預先調整標靶燃料產生器30供應標靶燃料82的路徑,以修正標靶燃料82的位置誤差或軌跡誤差。關於調整標靶燃料產生器30的方法將於後方說明中進一步描述。 The target fuel controller 73 is configured to control the actuation of the target fuel generator 30 based on the detection signal from the analyzer 71 to vary the supply error of the target fuel 82. For example, the target fuel controller 73 modifies the release time point of the droplets when the target fuel generator 30 releases the target fuel 82 to correct the position error or trajectory error of the target fuel 82. Alternatively, the target fuel controller 73 pre-adjusts the path of the target fuel generator 30 to supply the target fuel 82 to correct the position error or trajectory error of the target fuel 82 before the target fuel generator 30 releases the target fuel 82. . The method of adjusting the target fuel generator 30 will be further described in the following description.

第3圖顯示根據本發明實施例標靶燃料產生器30的示意圖。根據本發明部分實施例標靶燃料產生器30包括一儲存組件31以及一噴嘴組件35。儲存組件31配置用於供應燃料物質80至噴嘴組件35,噴嘴組件35配置用於將來自儲存組件31的燃料物質80轉換為標靶燃料82。 Figure 3 shows a schematic diagram of a target fuel generator 30 in accordance with an embodiment of the present invention. The target fuel generator 30 includes a storage assembly 31 and a nozzle assembly 35 in accordance with some embodiments of the present invention. The storage assembly 31 is configured to supply a fuel substance 80 to a nozzle assembly 35 that is configured to convert fuel material 80 from the storage assembly 31 to a target fuel 82.

在部分實施例中,儲存組件31包括一儲存槽32、一過濾器33以及一導引件34。儲存槽32配置用於儲存燃料物質80,且具有一上開孔321以及一下開孔322。上開孔321用於供一驅動氣體323(例如:氬氣)進入至儲存槽32內部,以形成一高壓以推動儲存槽32內的燃料物質80經由下開孔322離開儲存槽32。 In some embodiments, the storage assembly 31 includes a storage tank 32, a filter 33, and a guide member 34. The storage tank 32 is configured to store the fuel substance 80 and has an upper opening 321 and a lower opening 322. The upper opening 321 is used for a driving gas 323 (for example, argon gas) to enter the inside of the storage tank 32 to form a high pressure to push the fuel substance 80 in the storage tank 32 out of the storage tank 32 via the lower opening 322.

過濾器33相對於下開孔322連結於儲存槽32並配置用於濾除來自儲存槽32的燃料物質80中的雜質。導引件34通過過濾器33連結至儲存槽32並配置用於限定燃料物質80的形狀。 The filter 33 is coupled to the storage tank 32 with respect to the lower opening 322 and is configured to filter impurities in the fuel substance 80 from the storage tank 32. The guide member 34 is coupled to the storage tank 32 through the filter 33 and configured to define the shape of the fuel substance 80.

第4圖顯示本發明部分實施例的過濾器33與導引件34的示意圖。過濾器33沿一長軸L延伸,且一過濾通道331沿長軸L形成於過濾器33當中。過濾通道331的開口之一位於過濾器33連結儲存槽32(第3圖)的端部334並直接連結儲存槽32的下開孔322。並且,過濾通道331的另一開口位於過濾器33連結導引件34的端部336。在部分實施例中,一多孔薄膜332設置於過濾通道331內並配置用於濾除來自儲存槽32的燃料物質80中的雜質。在部分實施例中,在平行長軸L的平面上,多孔薄膜332具有一實質為U型的剖面,以強化濾除效能。 Figure 4 shows a schematic view of a filter 33 and a guide 34 of some embodiments of the present invention. The filter 33 extends along a long axis L, and a filter passage 331 is formed in the filter 33 along the long axis L. One of the openings of the filter passage 331 is located at the end 334 of the filter 33 that connects the storage tank 32 (Fig. 3) and directly connects the lower opening 322 of the storage tank 32. Also, the other opening of the filter passage 331 is located at the end 336 of the filter 33 joining the guide member 34. In some embodiments, a porous membrane 332 is disposed within the filtration passage 331 and configured to filter impurities in the fuel material 80 from the storage tank 32. In some embodiments, the porous membrane 332 has a substantially U-shaped cross-section on the plane parallel to the major axis L to enhance filtration efficiency.

導引件34沿長軸L延伸,且一導引通道341沿長軸L形成於導引件34當中。導引通道341的開口之一位於導引件34連結過濾器33的端部344並直接連結過濾器33的過濾通道331,以接收來自過濾器33的燃料物質80(第3圖)。並且,導引通道341的另一開口位於導引件34連結噴嘴組件35的端部346,以供應燃料物質80(第3圖)至噴嘴組件35。 The guide member 34 extends along the long axis L, and a guide passage 341 is formed in the guide member 34 along the long axis L. One of the openings of the guide passage 341 is located at the end portion 344 of the guide member 34 that connects the filter 33 and directly connects the filter passage 331 of the filter 33 to receive the fuel substance 80 from the filter 33 (Fig. 3). Also, the other opening of the guide passage 341 is located at the end portion 346 of the guide member 34 that is coupled to the nozzle assembly 35 to supply the fuel substance 80 (Fig. 3) to the nozzle assembly 35.

在部分實施例中,導引通道341在遠離儲存槽32的方向上寬度漸減。舉例而言,導引通道341在平行長軸L的平面上,具有錐形的剖面,其中導引通道341在端部346的寬度可相等於或略大於噴嘴組件35的噴嘴頭371、372的寬度,以利燃料物質80(第3圖)進入噴嘴組件35當中,而不致產生過大的壓力壓迫於噴嘴組件35。 In some embodiments, the guide channel 341 is tapered in width in a direction away from the reservoir 32. For example, the guide channel 341 has a tapered cross-section on a plane parallel to the major axis L, wherein the width of the guide channel 341 at the end 346 can be equal to or slightly larger than the nozzle tips 371, 372 of the nozzle assembly 35. The width of the fuel material 80 (Fig. 3) enters the nozzle assembly 35 without causing excessive pressure to be forced against the nozzle assembly 35.

同時參照第3、4圖,儲存組件31是經由一流道310將燃料物質80自儲存槽32排出並供應至噴嘴組件35當中。在一實施例中,流道310是由儲存槽32的下開孔322、過濾器33的過濾通道331、及導引件34的導引通道341所構成。亦即,來自儲存槽32的燃料物質80依序通過儲存槽32的下開孔322、過濾器33的過濾通道331、及導引件34的導引通道341後再供應至噴嘴組件35當中。 Referring also to FIGS. 3 and 4, the storage assembly 31 discharges the fuel substance 80 from the storage tank 32 via the main flow path 310 and supplies it to the nozzle assembly 35. In one embodiment, the flow path 310 is formed by the lower opening 322 of the storage tank 32, the filter passage 331 of the filter 33, and the guide passage 341 of the guide member 34. That is, the fuel substance 80 from the storage tank 32 sequentially passes through the lower opening 322 of the storage tank 32, the filter passage 331 of the filter 33, and the guide passage 341 of the guide member 34, and is then supplied into the nozzle assembly 35.

應當理解的是,在上述實施例中,雖然噴嘴組件35是透過過濾器33與導引件34與儲存槽32的下開孔322進行連結,以接收來自儲存槽32的燃料物質80(第3圖),但本發明實施例並不僅此為限。 It should be understood that, in the above embodiment, the nozzle assembly 35 is coupled to the lower opening 322 of the storage tank 32 through the filter 33 and the guide member 34 to receive the fuel substance 80 from the storage tank 32 (third Fig.), but the embodiment of the invention is not limited thereto.

在其餘實施例中,過濾器33省略設置,導引件34 直接連結至儲存槽32。噴嘴組件35透過導引件34與儲存槽32的下開孔322進行連結,以接收來自儲存槽32的燃料物質80(第3圖)。此時,流道310是由儲存槽32的下開孔322、及導引件34的導引通道341所構成。來自儲存槽32的燃料物質80依序通過儲存槽32的下開孔322及導引件34的導引通道341後再供應至噴嘴組件35當中。 In the remaining embodiments, the filter 33 is omitted and the guide 34 is directly coupled to the reservoir 32. The nozzle assembly 35 is coupled to the lower opening 322 of the storage tank 32 through the guide member 34 to receive the fuel substance 80 from the storage tank 32 (Fig. 3). At this time, the flow path 310 is constituted by the lower opening 322 of the storage tank 32 and the guide passage 341 of the guide 34. The fuel substance 80 from the storage tank 32 is sequentially supplied to the nozzle assembly 35 through the lower opening 322 of the storage tank 32 and the guide passage 341 of the guide member 34.

在另一些實施例中,導引件34與過濾器33皆省略設置。噴嘴組件35直接與儲存槽32的下開孔322進行連結,以接收來自儲存槽32的燃料物質80(第3圖)。此時,流道310僅由儲存槽32的下開孔322構成。來自儲存槽32的燃料物質80在流出儲存槽32的下開孔322後直接供應至噴嘴組件35當中。 In other embodiments, the guide 34 and the filter 33 are omitted. The nozzle assembly 35 is directly coupled to the lower opening 322 of the reservoir 32 to receive the fuel material 80 from the reservoir 32 (Fig. 3). At this time, the flow path 310 is constituted only by the lower opening 322 of the storage tank 32. Fuel material 80 from storage tank 32 is supplied directly into nozzle assembly 35 after exiting lower opening 322 of storage tank 32.

繼續參照第3圖,噴嘴組件35配置用於分配來自儲存組件31的燃料物質80並將燃料物質80轉換具有適當形式的標靶材料82。舉例而言,標靶燃料產生器30所供應的標靶燃料82可為液體微滴的形式;標靶燃料82可為液體流的形式;標靶燃料82可為固體粒子的形式、標靶燃料82可為包含有固體粒子的液體微滴的形式;或者,標靶燃料82可為包含固體粒子的液體流的形式。 With continued reference to FIG. 3, nozzle assembly 35 is configured to dispense fuel material 80 from storage assembly 31 and convert fuel material 80 to target material 82 in a suitable form. For example, the target fuel 82 supplied by the target fuel generator 30 may be in the form of liquid droplets; the target fuel 82 may be in the form of a liquid stream; the target fuel 82 may be in the form of solid particles, target fuel 82 may be in the form of a liquid droplet containing solid particles; alternatively, the target fuel 82 may be in the form of a liquid stream comprising solid particles.

第5圖顯示根據本發明部分實施例的噴嘴組件35的下視圖。在部分實施例中,噴嘴組件35包括一轉盤36、複數個噴嘴頭,例如第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375。 Figure 5 shows a bottom view of a nozzle assembly 35 in accordance with some embodiments of the present invention. In some embodiments, the nozzle assembly 35 includes a turntable 36, a plurality of nozzle heads, such as a first nozzle head 371, a second nozzle head 372, a third nozzle head 373, a fourth nozzle head 374, and a fifth nozzle head 375.

轉盤36實質為圓形板體,且具有對應噴嘴頭數量的開孔形成於其上。舉例而言,在第5圖所示的實施例中,噴 嘴頭共有5個,轉盤36具有五個對應噴嘴頭的開孔360。第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375分別連結轉盤36的開孔之一,並朝遠離轉盤36的方向延伸。 The turntable 36 is substantially a circular plate body, and an opening having a corresponding number of nozzle heads is formed thereon. For example, in the embodiment shown in Fig. 5, there are five nozzle heads, and the turntable 36 has five openings 360 corresponding to the nozzle heads. The first nozzle head 371, the second nozzle head 372, the third nozzle head 373, the fourth nozzle head 374, and the fifth nozzle head 375 respectively connect one of the openings of the turntable 36 and extend away from the turntable 36.

在部分實施例中,第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375繞轉盤36的中心C設置,並且在轉盤36的周向方向上間隔相同既定角度。亦即,第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375之間相對於轉盤36的中心C間隔一夾角α。夾角α的角度可滿足公式:α=360°/n,其中n為噴嘴頭的數量。在第5圖所示的實施例中,第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375之間的夾角α大約相等於72度。 In some embodiments, the first nozzle head 371, the second nozzle head 372, the third nozzle head 373, the fourth nozzle head 374, and the fifth nozzle head 375 are disposed around the center C of the turntable 36, and in the circumferential direction of the turntable 36. The directions are the same at the same angle. That is, the first nozzle head 371, the second nozzle head 372, the third nozzle head 373, the fourth nozzle head 374, and the fifth nozzle head 375 are spaced apart from each other with respect to the center C of the turntable 36 by an angle α. The angle of the angle α can satisfy the formula: α = 360 ° / n, where n is the number of nozzle heads. In the embodiment shown in Fig. 5, the angle α between the first nozzle head 371, the second nozzle head 372, the third nozzle head 373, the fourth nozzle head 374, and the fifth nozzle head 375 is approximately equal to 72 degrees. .

再次參照第3圖,在部分實施例中,第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375(第3圖僅顯示第一噴嘴頭371及第二噴嘴頭372)各自包括一中空的管體370以及一致動器38。管體370沿平行長軸L的方向延伸,致動器38包覆於管體370外圍。在部分實施例中,致動器38包括一壓電材料並電性連結至標靶燃料控制器73,並根據標靶燃料控制器73提供的電壓改變施加於管體370的壓力。 Referring again to FIG. 3, in some embodiments, the first nozzle head 371, the second nozzle head 372, the third nozzle head 373, the fourth nozzle head 374, and the fifth nozzle head 375 (Fig. 3 only shows the first nozzle The head 371 and the second nozzle head 372) each include a hollow tubular body 370 and an actuator 38. The tubular body 370 extends in the direction parallel to the major axis L, and the actuator 38 is wrapped around the periphery of the tubular body 370. In some embodiments, the actuator 38 includes a piezoelectric material and is electrically coupled to the target fuel controller 73 and varies the pressure applied to the tubular body 370 in accordance with the voltage provided by the target fuel controller 73.

在部分實施例中,噴嘴組件35更包括複數個支架365,以加強第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375(第3圖僅顯示噴嘴頭371、第 二噴嘴頭372)的結構強度。舉例而言,在第5圖所顯示的實施例中,噴嘴組件35共包括5個支架365,第一噴嘴頭371、第二噴嘴頭372、第三噴嘴頭373、第四噴嘴頭374、第五噴嘴頭375之間皆以一個支架365連結。 In some embodiments, the nozzle assembly 35 further includes a plurality of brackets 365 to reinforce the first nozzle head 371, the second nozzle head 372, the third nozzle head 373, the fourth nozzle head 374, and the fifth nozzle head 375 (third The figure only shows the structural strength of the nozzle head 371 and the second nozzle head 372). For example, in the embodiment shown in FIG. 5, the nozzle assembly 35 includes a total of five brackets 365, a first nozzle head 371, a second nozzle head 372, a third nozzle head 373, a fourth nozzle head 374, and a The five nozzle heads 375 are connected by a bracket 365.

再次參照第3圖,在部分實施例中,標靶燃料產生器30更包括一旋轉驅動器391以及一轉軸392。轉軸392連結轉盤36的中心C。旋轉驅動器391經由轉軸392連結轉盤36並配置用於旋轉轉盤36繞一旋轉軸R旋轉。旋轉軸R可重疊於轉盤36的中心C,並且旋轉軸R可與儲存組件31的長軸L平行設置並與長軸L相隔一間距而未重疊。 Referring again to FIG. 3, in some embodiments, the target fuel generator 30 further includes a rotary drive 391 and a rotating shaft 392. The rotating shaft 392 is coupled to the center C of the turntable 36. The rotary actuator 391 connects the turntable 36 via the rotating shaft 392 and is configured to rotate the rotary turntable 36 about a rotation axis R. The rotation axis R may overlap the center C of the turntable 36, and the rotation axis R may be disposed in parallel with the long axis L of the storage assembly 31 and spaced apart from the long axis L without overlapping.

在部分實施例中,旋轉驅動器391電性連結至標靶燃料控制器73,並根據標靶燃料控制器73所提供的電壓旋轉轉盤36,使轉盤36位於不同的旋轉位置。旋轉驅動器391可為任何可驅動轉盤36旋轉的馬達,例如:DC馬達、步進馬達或者其他適當之驅動元件。在部分實施例中,旋轉驅動器391省略設置,轉盤36的旋轉位置透過人工方式進行調整。 In some embodiments, the rotary drive 391 is electrically coupled to the target fuel controller 73 and rotates the turntable 36 according to the voltage provided by the target fuel controller 73 to position the turntable 36 in different rotational positions. Rotary drive 391 can be any motor that can drive rotation of turntable 36, such as a DC motor, stepper motor, or other suitable drive element. In some embodiments, the rotary actuator 391 is omitted and the rotational position of the turntable 36 is manually adjusted.

第6圖顯示本發明部分實施例的供應一標靶燃料82的方法100的流程圖。為了舉例,該流程以第7、8圖的示意圖來說明。在不同的實施例中,部分階段可以替換或是消去。可加入額外的特性至半導體裝置結構中。在不同的實施例中,部分上述特性可以替換或是消去。 Figure 6 shows a flow diagram of a method 100 of supplying a target fuel 82 in accordance with some embodiments of the present invention. For the sake of example, the flow is illustrated by the schematic diagrams of Figures 7 and 8. In different embodiments, some of the stages can be replaced or eliminated. Additional features can be added to the semiconductor device structure. In various embodiments, some of the above characteristics may be replaced or eliminated.

方法100包括操作101,連結噴嘴組件35的第一噴嘴頭371至儲存組件31的流道310。在部分實施例中,如第7圖所示,噴嘴組件35的轉盤36是設置於第一旋轉位置,使第一噴 嘴頭371流體連結於儲存組件31的流道310。此時,設置於轉盤36的其餘噴嘴頭,例如第二噴嘴頭372是與流道310分離。 The method 100 includes an operation 101 of joining the first nozzle tip 371 of the nozzle assembly 35 to the flow channel 310 of the storage assembly 31. In some embodiments, as shown in Fig. 7, the turntable 36 of the nozzle assembly 35 is disposed in the first rotational position to fluidly couple the first nozzle head 371 to the flow channel 310 of the storage assembly 31. At this time, the remaining nozzle heads provided on the turntable 36, for example, the second nozzle heads 372 are separated from the flow path 310.

方法100包括操作102,通過儲存組件31的流道310以及第一噴嘴頭371供應標靶燃料82進入激發區81。在部分實施例中,在操作101完成後,驅動氣體323開始通過上開孔321供應進入儲存槽32內部,並形成一高壓以推動儲存槽32內的燃料物質80經由下開孔322經由流道310進入第一噴嘴頭371。在燃料物質80進入第一噴嘴頭371後,第一噴嘴頭371的致動器38根據標靶燃料控制器73所提供的電子訊號,改變施加於管體370的壓力,進而轉換燃料物質80成為具有既定形式的標靶燃料82。 The method 100 includes an operation 102 of supplying the target fuel 82 through the flow path 310 of the storage assembly 31 and the first nozzle head 371 into the excitation zone 81. In some embodiments, after operation 101 is completed, the driving gas 323 begins to be supplied into the interior of the storage tank 32 through the upper opening 321 and forms a high pressure to push the fuel substance 80 in the storage tank 32 through the lower opening 322 via the flow path. 310 enters the first nozzle tip 371. After the fuel substance 80 enters the first nozzle head 371, the actuator 38 of the first nozzle head 371 changes the pressure applied to the tube body 370 according to the electronic signal supplied from the target fuel controller 73, thereby converting the fuel substance 80 into The target fuel 82 has a predetermined form.

舉例而言,標靶燃料控制器73在一既定頻率持續供應一電壓到致動器38,使致動器38在接收電壓時壓迫管體370並在未接收電壓時停止壓迫管體370。於是,第一噴嘴頭371可以供應複數個具有微液滴形式的標靶燃料82至激發區81內。上述既定頻率可以根據第一雷射源40以及第二雷射源50(第1圖)發生雷射光束的頻率以及推動燃料物質80流動的驅動氣體323的壓力進行調整,使第一雷射源40以及第二雷射源50發射的雷射光束可以照射於每一個標靶燃料82之上,進而增加燃料物質80的使用效率並提升高能量放射光束的能量值。 For example, the target fuel controller 73 continues to supply a voltage to the actuator 38 at a predetermined frequency, causing the actuator 38 to compress the tube 370 when receiving the voltage and to stop pressing the tube 370 when no voltage is received. Thus, the first nozzle tip 371 can supply a plurality of target fuels 82 in the form of microdroplets into the excitation zone 81. The predetermined frequency can be adjusted according to the frequency at which the first laser source 40 and the second laser source 50 (Fig. 1) generate the laser beam and the pressure of the driving gas 323 that pushes the fuel substance 80 to flow, so that the first laser source 40 and the laser beam emitted by the second laser source 50 can be irradiated onto each of the target fuels 82, thereby increasing the efficiency of use of the fuel substance 80 and increasing the energy value of the high energy radiation beam.

在部分實施例中,標靶燃料82受第一雷射源40以及第二雷射源50照射後,標靶燃料82吸收雷射光束之熱能,並被加熱至臨界溫度。在此臨界溫度下,標靶燃料82受激發而轉變成電漿狀態並發射一放射光束。此放射光束可包括極紫外線 輻射。曝光系統10即可利用此放射光束對半導體基板22施行一光刻曝光製程。 In some embodiments, after the target fuel 82 is illuminated by the first laser source 40 and the second laser source 50, the target fuel 82 absorbs the thermal energy of the laser beam and is heated to a critical temperature. At this critical temperature, the target fuel 82 is excited to transition to a plasma state and emit a radiation beam. This radiation beam can include extreme ultraviolet radiation. The exposure system 10 can perform a lithographic exposure process on the semiconductor substrate 22 using the radiation beam.

在部分實施例中,在持續使用第一噴嘴頭371供應標靶燃料82一段時間之後,標靶燃料82當中的雜質可能卡附於第一噴嘴頭371的管體370當中,進而造成標靶燃料82的流量的減少或造成標靶燃料82偏離預期軌道。若持續使用第一噴嘴頭371供應標靶燃料82,可能造成雷射光束與一些標靶燃料82焦點不對焦的現象。若雷射光束未成功對焦(亦即,雷射光束未撞擊到標靶燃料),則將減小所得輻射的功率從而造成引發半導體基板22表面上方的光阻曝光不均勻。 In some embodiments, after the target nozzle 82 is continuously supplied with the first nozzle head 371 for a period of time, impurities in the target fuel 82 may be stuck in the tube body 370 of the first nozzle head 371, thereby causing the target fuel. The reduction in flow of 82 causes the target fuel 82 to deviate from the intended orbit. If the first nozzle head 371 is continuously used to supply the target fuel 82, the laser beam may be out of focus with some of the target fuel 82. If the laser beam is not successfully focused (i.e., the laser beam does not impinge on the target fuel), the power of the resulting radiation will be reduced to cause uneven exposure of the photoresist across the surface of the semiconductor substrate 22.

為了使標靶燃料82的供應可以滿足製成需求以提高產品良率,方法100繼續至操作103與104。 In order for the supply of target fuel 82 to meet manufacturing requirements to increase product yield, method 100 continues to operations 103 and 104.

在操作103中,監測來自第一噴嘴頭371的標靶燃料82在激發區81中的特性,並根據監測結果產生偵測訊號。在部分實施例中,位於激發區81中的標靶燃料82是透過靶燃料位置偵測器72進行監測。靶燃料位置偵測器72監測位於激發區81中的標靶燃料82的位置以及軌跡,並產生照片或影像回送至分析器71。分析器71分析來自標靶燃料位置偵測器72的監測影像並根據監測影像的分析結果輸出一偵測訊號至標靶燃料控制器73。 In operation 103, the characteristics of the target fuel 82 from the first nozzle tip 371 in the excitation region 81 are monitored, and a detection signal is generated based on the monitoring result. In some embodiments, the target fuel 82 located in the excitation zone 81 is monitored by the target fuel position detector 72. The target fuel position detector 72 monitors the position and trajectory of the target fuel 82 located in the excitation zone 81 and produces a photo or image back to the analyzer 71. The analyzer 71 analyzes the monitoring image from the target fuel position detector 72 and outputs a detection signal to the target fuel controller 73 based on the analysis result of the monitoring image.

舉例而言,分析器71接收來自標靶燃料位置偵測器72的照片或影像並與一參考照片或一參考影像進行比對。分析器71可計算標靶燃料82的微滴的位置及軌跡,並且可逐滴計算每一微滴位置誤差,進而判斷標靶燃料82的位置誤差或者軌 跡誤差。接著,根據上述位置誤差或者軌跡誤差傳送偵測訊號至標靶燃料控制器73。 For example, analyzer 71 receives a photo or image from target fuel position detector 72 and compares it to a reference photo or a reference image. The analyzer 71 can calculate the position and trajectory of the droplets of the target fuel 82, and can calculate each droplet position error drop by drop, thereby determining the position error or the track error of the target fuel 82. Then, the detection signal is transmitted to the target fuel controller 73 according to the position error or the track error.

方法100包括操作104,判斷偵測訊號是否超過門檻值。在部分實施例中,標靶燃料控制器73接收來自分析器71的偵測訊號後,與一門檻值進行比對。上述門檻值可根據位置誤差或者軌跡誤差所能承受的最大數值所決定。當偵測訊號未超過上述門檻值,則方法100重複操作103、104,直至曝光系統10的製程結束為止。若當偵測訊號超過上述門檻值,則方法100繼續至操作105-107。 The method 100 includes an operation 104 of determining whether the detected signal exceeds a threshold. In some embodiments, the target fuel controller 73 receives the detection signal from the analyzer 71 and compares it with a threshold value. The threshold value described above can be determined based on the position error or the maximum value that the trajectory error can withstand. When the detection signal does not exceed the threshold value, the method 100 repeats operations 103, 104 until the process of the exposure system 10 ends. If the detection signal exceeds the threshold, then the method 100 continues to operations 105-107.

在操作105中,停止供應來自第一噴嘴頭371的標靶燃料82。在部分實施例中,一旦標靶燃料控制器73判斷偵測訊號後大於門檻值之後,標靶燃料控制器73發出一驅動訊號到致動器38,以停止標靶燃料82自第一噴嘴頭371流出。或者,標靶燃料控制器73發出一驅動訊號到控制驅動氣體323流動的調節閥(圖未示),停止供應驅動氣體323至儲存槽。於是,燃料物質80不再自儲存槽32流出,以停止標靶燃料82自第一噴嘴頭371流出。 In operation 105, supply of the target fuel 82 from the first nozzle tip 371 is stopped. In some embodiments, once the target fuel controller 73 determines that the detection signal is greater than the threshold value, the target fuel controller 73 sends a drive signal to the actuator 38 to stop the target fuel 82 from the first nozzle tip. 371 outflow. Alternatively, the target fuel controller 73 sends a drive signal to a regulating valve (not shown) that controls the flow of the driving gas 323 to stop supplying the driving gas 323 to the storage tank. Thus, the fuel substance 80 no longer flows out of the storage tank 32 to stop the target fuel 82 from flowing out of the first nozzle head 371.

在操作106中,旋轉轉盤36,使設置於轉盤36的第二噴嘴頭372連結至儲存組件31的流道310。在部分實施例中,在操作105結束之後,標靶燃料控制器73更發出另一驅動訊號到旋轉驅動器391,使旋轉驅動器391驅動轉盤36旋轉一既定角度,使轉盤36旋轉至第二旋轉位置,如第8圖所示。當轉盤36位於第二旋轉位置時,第二噴嘴頭372連結至儲存組件31的流道310,且第一噴嘴頭371與流道310分離。上述既定角度可相 等於第一噴嘴頭371與第二噴嘴頭372所間隔的夾角α(第5圖)。 In operation 106, the turntable 36 is rotated to couple the second nozzle head 372 disposed on the turntable 36 to the flow path 310 of the storage assembly 31. In some embodiments, after the end of operation 105, the target fuel controller 73 further issues another drive signal to the rotary drive 391, causing the rotary drive 391 to drive the turntable 36 to rotate by a predetermined angle to rotate the turntable 36 to the second rotational position. As shown in Figure 8. When the turntable 36 is in the second rotational position, the second nozzle head 372 is coupled to the flow path 310 of the storage assembly 31, and the first nozzle head 371 is separated from the flow path 310. The predetermined angle may be equal to the angle α between the first nozzle head 371 and the second nozzle head 372 (Fig. 5).

在操作107中,通過儲存組件31的流道310以及第二噴嘴頭372供應標靶燃料82進入激發區。操作107相似於操作102,但標靶燃料82改以正常的第二噴嘴頭372進行供應,為簡化說明在此不再重複。在操作107執行的同時,可執行類似操作103與104的程序,監測來自第二噴嘴頭372的標靶燃料82在激發區81中的特性,並在標靶燃料82產生位置誤差或者軌跡誤差,停止供應標靶燃料82,並改用另一噴嘴頭,例如第5圖所示的第三噴嘴頭373,供應標靶燃料82。 In operation 107, the target fuel 82 is supplied to the excitation zone through the flow path 310 of the storage assembly 31 and the second nozzle head 372. Operation 107 is similar to operation 102, but the target fuel 82 is supplied with a normal second nozzle tip 372, which is not repeated here for simplicity of illustration. While operation 107 is being performed, a procedure similar to operations 103 and 104 may be performed to monitor the characteristics of the target fuel 82 from the second nozzle tip 372 in the excitation zone 81 and to generate a position error or trajectory error in the target fuel 82, The supply of the target fuel 82 is stopped, and another nozzle head, such as the third nozzle head 373 shown in Fig. 5, is used to supply the target fuel 82.

本發明多個實施例中的標靶燃料產生器可在標靶燃料的供應發生異常時,藉由改變供給標靶燃料的噴嘴頭,使標靶燃料依照既定參數繼續供應。由於標靶燃料產生器可以穩定供應標靶燃料,每一標靶燃料皆可受雷射光束激發而發出預設能量對半導體基板表面上方的光阻進行曝光。於是,半導體基板的產品良率可以獲得提昇。另一方面,由於使用標靶燃料產生器的曝光系統不需時常停機進行保養或維修,曝光系統在單位時間下可產出的產品數量也可獲得增加。 The target fuel generator in various embodiments of the present invention can continue to supply the target fuel in accordance with a predetermined parameter by changing the nozzle head to which the target fuel is supplied when the supply of the target fuel is abnormal. Since the target fuel generator can stably supply the target fuel, each target fuel can be excited by the laser beam to emit a preset energy to expose the photoresist above the surface of the semiconductor substrate. Thus, the product yield of the semiconductor substrate can be improved. On the other hand, since the exposure system using the target fuel generator does not require frequent shutdowns for maintenance or repair, the number of products that the exposure system can produce per unit time can also be increased.

本發明部分實施例提供一種標靶燃料產生器。標靶燃料產生器包括一儲存組件。儲存組件具有一流道。標靶燃料產生器更包括一噴嘴組件。噴嘴組件,以可旋轉於一第一旋轉位置與一第二旋轉位置的方式連結儲存組件。並且,噴嘴組件包括一第一噴嘴頭以及一第二噴嘴頭。在第一旋轉位置上,第一噴嘴頭連結流道且第二噴嘴頭與流道分離,並且在第二旋轉位置上,第二噴嘴頭連通流道且第一噴嘴頭與流道分離。 Some embodiments of the present invention provide a target fuel generator. The target fuel generator includes a storage assembly. The storage components are superb. The target fuel generator further includes a nozzle assembly. The nozzle assembly couples the storage assembly in a manner rotatable to a first rotational position and a second rotational position. And, the nozzle assembly includes a first nozzle head and a second nozzle head. In the first rotational position, the first nozzle tip joins the flow channel and the second nozzle tip is separated from the flow channel, and in the second rotational position, the second nozzle tip communicates with the flow channel and the first nozzle tip is separated from the flow channel.

在部分實施例中,流道沿一長軸延伸,且噴嘴組件可繞一旋轉軸轉動,其中旋轉軸與長軸分離並未重疊。 In some embodiments, the flow path extends along a long axis and the nozzle assembly is rotatable about a rotational axis, wherein the rotational axis is separated from the long axis without overlapping.

在部分實施例中,第一噴嘴頭與第二噴嘴頭分別包括一管體及一致動器。一致動器,設置於管體並根據所接收之電壓改變施加於管體的壓力。 In some embodiments, the first nozzle head and the second nozzle head respectively include a tube body and an actuator. An actuator is disposed on the tubular body and varies the pressure applied to the tubular body in accordance with the received voltage.

在部分實施例中,噴嘴組件更包括一支架。支架連結與第一噴嘴頭與第二噴嘴頭之間。 In some embodiments, the nozzle assembly further includes a bracket. The bracket is coupled between the first nozzle head and the second nozzle head.

在部分實施例中,標靶燃料產生器更包括一旋轉驅動器。旋轉驅動器配置用於旋轉噴嘴組件。另外,噴嘴組件更包括一轉盤,連結旋轉驅動器,第一噴嘴頭與第二噴嘴頭設置於轉盤並在周向上相對於轉盤的中心間隔一既定角度,既定角度相等於第二旋轉位置與第一旋轉位置之差。旋轉驅動器配置用於控制轉盤旋轉既定角度。 In some embodiments, the target fuel generator further includes a rotary drive. The rotary drive is configured to rotate the nozzle assembly. In addition, the nozzle assembly further includes a turntable coupled to the rotary drive, the first nozzle head and the second nozzle head are disposed on the turntable and are circumferentially spaced apart from the center of the turntable by a predetermined angle, the predetermined angle being equal to the second rotational position and the first The difference in rotational position. The rotary drive configuration is used to control the turntable to rotate a given angle.

在部分實施例中,儲存組件的流道包括一導引通道,導引通道相鄰第一噴嘴頭或第二噴嘴頭設置。在朝向噴嘴組件的方向上,導引通道的寬度漸減。 In some embodiments, the flow channel of the storage assembly includes a guide channel disposed adjacent the first nozzle tip or the second nozzle tip. The width of the guide channel is gradually reduced in the direction toward the nozzle assembly.

本發明部分實施例提供一種供應一標靶燃料的方法。上述方法包括連結設置於一轉盤的一第一噴嘴頭至一儲存組件的一流道。上述方法更包括通過儲存組件的流道以及第一噴嘴頭供應一標靶燃料進入一激發區。上述方法也包括監測來自第一噴嘴頭的標靶燃料在激發區中的特性,並根據監測結果產生一偵測訊號。另外,上述方法包括當偵測訊號超過一門檻值時,停止供應來自第一噴嘴頭的標靶燃料。上述方法還包括旋轉轉盤,以連結設置於轉盤的一第二噴嘴頭至儲存組件的流 道。上述方法更包括通過儲存組件的流道以及第二噴嘴頭供應標靶燃料進入激發區。 Some embodiments of the present invention provide a method of supplying a target fuel. The method includes joining a first nozzle head disposed in a turntable to a first-class track of a storage assembly. The method further includes supplying a target fuel into an excitation zone through the flow path of the storage assembly and the first nozzle tip. The method also includes monitoring the characteristics of the target fuel from the first nozzle tip in the excitation zone and generating a detection signal based on the monitoring result. Additionally, the method includes stopping supplying the target fuel from the first nozzle tip when the detection signal exceeds a threshold. The method further includes rotating the turntable to join a second nozzle head disposed on the turntable to the flow path of the storage assembly. The above method further includes supplying the target fuel into the excitation region through the flow path of the storage assembly and the second nozzle tip.

在部分實施例中,上述方法更包括施加變動的電壓至第一噴嘴頭的一致動器,以改變致動器施加於第一噴嘴頭的一管體的壓力。 In some embodiments, the method further includes applying a varying voltage to the actuator of the first nozzle tip to vary the pressure applied by the actuator to a body of the first nozzle tip.

在部分實施例中,流道沿一長軸延伸,且轉盤是繞一旋轉軸轉動,旋轉軸是與長軸分離並未重疊。 In some embodiments, the flow path extends along a long axis and the turntable is rotated about a rotational axis that is separated from the long axis and does not overlap.

在部分實施例中,第一噴嘴頭所供應的燃料的特性是通過一影像感測器產生一影像,並根據影像的內容決定偵測訊號。 In some embodiments, the fuel supplied by the first nozzle tip is characterized by an image generated by an image sensor and the detection signal is determined according to the content of the image.

以上概略說明了本發明數個實施例的特徵,使所屬技術領域中具有通常知識者對於後續本發明的詳細說明可更為容易理解。任何所屬技術領域中具有通常知識者應瞭解到本說明書可輕易作為其它結構或製程的變更或設計基礎,以進行相同於本發明實施例的目的及/或獲得相同的優點。任何所屬技術領域中具有通常知識者也可理解與上述等同的結構或製程並未脫離本發明之精神和保護範圍內,且可在不脫離本發明之精神和範圍內,當可作更動、替代與潤飾。 The above summary of the features of the various embodiments of the invention are in the It will be appreciated by those of ordinary skill in the art that the present disclosure may be readily utilized as a variation or design basis for other structures or processes to achieve the same objectives and/or advantages of the embodiments of the invention. It is to be understood by those of ordinary skill in the art that the invention may be modified or substituted without departing from the spirit and scope of the invention. With retouching.

Claims (10)

一種標靶燃料產生器,包括:一儲存組件,具有一流道;以及一噴嘴組件,以可旋轉於一第一旋轉位置與一第二旋轉位置的方式連結該儲存組件,且包括一第一噴嘴頭以及一第二噴嘴頭,在該第一旋轉位置上,該第一噴嘴頭連結該流道且該第二噴嘴頭與該流道分離,並且在該第二旋轉位置上,該第二噴嘴頭連通該流道且該第一噴嘴頭與該流道分離。  A target fuel generator includes: a storage assembly having a first-class track; and a nozzle assembly coupled to the storage assembly for rotation at a first rotational position and a second rotational position, and including a first nozzle a head and a second nozzle head, the first nozzle head joining the flow path and the second nozzle head being separated from the flow path in the first rotational position, and in the second rotational position, the second nozzle A head communicates with the flow path and the first nozzle tip is separated from the flow path.   如申請專利範圍第1項所述之標靶燃料產生器,其中該流道沿一長軸延伸,且該噴嘴組件可繞一旋轉軸轉動,其中該旋轉軸與該長軸分離並未重疊。  The target fuel generator of claim 1, wherein the flow path extends along a long axis, and the nozzle assembly is rotatable about a rotational axis, wherein the rotational axis does not overlap with the long axis.   如申請專利範圍第1項所述之標靶燃料產生器,其中該第一噴嘴頭與該第二噴嘴頭分別包括:一管體;以及一致動器,設置於該管體並根據所接收之電壓改變施加於該管體的壓力。  The target fuel generator of claim 1, wherein the first nozzle head and the second nozzle head respectively comprise: a tube body; and an actuator disposed on the tube body and received according to the The voltage changes the pressure applied to the tube.   如申請專利範圍第1項所述之標靶燃料產生器,其中該噴嘴組件更包括一支架,該支架連結與該第一噴嘴頭與該第二噴嘴頭之間。  The target fuel generator of claim 1, wherein the nozzle assembly further comprises a bracket coupled between the first nozzle head and the second nozzle head.   如申請專利範圍第1項所述之標靶燃料產生器,更包括一旋轉驅動器,配置用於旋轉該噴嘴組件;其中,該噴嘴組件更包括一轉盤,連結該旋轉驅動器,該第一噴嘴頭與該第二噴嘴頭設置於該轉盤並在周向上相對 於該轉盤的中心間隔一既定角度,該既定角度相等於該第二旋轉位置與該第一旋轉位置之差;其中,該旋轉驅動器配置用於控制該轉盤旋轉該既定角度。  The target fuel generator of claim 1, further comprising a rotary drive configured to rotate the nozzle assembly; wherein the nozzle assembly further comprises a turntable coupled to the rotary drive, the first nozzle head And the second nozzle head is disposed on the turntable and is circumferentially spaced apart from a center of the turntable by a predetermined angle, the predetermined angle being equal to a difference between the second rotational position and the first rotational position; wherein the rotary drive configuration It is used to control the turntable to rotate the predetermined angle.   如申請專利範圍第1項所述之標靶燃料產生器,其中該儲存組件的該流道包括一導引通道,該導引通道相鄰該第一噴嘴頭或該第二噴嘴頭設置;其中,在朝向該噴嘴組件的方向上,該導引通道的寬度漸減。  The target fuel generator of claim 1, wherein the flow path of the storage assembly comprises a guiding passage adjacent to the first nozzle head or the second nozzle head; wherein The width of the guide channel is gradually reduced in the direction toward the nozzle assembly.   一種供應一標靶燃料的方法,包括:連結設置於一轉盤的一第一噴嘴頭至一儲存組件的一流道;通過該儲存組件的該流道以及該第一噴嘴頭供應該標靶燃料進入一激發區;監測來自該第一噴嘴頭的該標靶燃料在該激發區中的特性,並根據監測結果產生一偵測訊號;當該偵測訊號超過一門檻值時,停止供應來自該第一噴嘴頭的該標靶燃料;旋轉該轉盤,以連結設置於該轉盤的一第二噴嘴頭至該儲存組件的該流道;以及通過該儲存組件的該流道以及該第二噴嘴頭供應該標靶燃料進入該激發區。  A method of supplying a target fuel, comprising: joining a first nozzle head disposed in a turntable to a first-class track of a storage assembly; supplying the target fuel through the flow path of the storage assembly and the first nozzle head An excitation region; monitoring characteristics of the target fuel from the first nozzle head in the excitation region, and generating a detection signal according to the monitoring result; when the detection signal exceeds a threshold, stopping the supply from the first a target fuel of a nozzle head; rotating the turntable to connect a second nozzle head disposed on the turntable to the flow path of the storage assembly; and the flow path through the storage assembly and the second nozzle head The target fuel should enter the excitation zone.   如申請專利範圍第7項所述之方法,更包括施加變動的電壓至該第一噴嘴頭的一致動器,以改變該致動器施加於該第一噴嘴頭的一管體的壓力。  The method of claim 7, further comprising applying a varying voltage to the actuator of the first nozzle tip to vary the pressure applied by the actuator to a body of the first nozzle tip.   如申請專利範圍第7項所述之方法,其中該流道沿一長軸延伸,且該轉盤是繞一旋轉軸轉動,該旋轉軸是與該長軸分離並未重疊。  The method of claim 7, wherein the flow path extends along a long axis, and the turntable is rotated about an axis of rotation that is separated from the long axis and does not overlap.   如申請專利範圍第7項所述之方法,其中監測來自該第一噴嘴頭所供應的燃料的特性是通過一影像感測器產生一監測影像,並將該監測影像與一參考影像比對,再根據比對結果決定該偵測訊號。  The method of claim 7, wherein monitoring the characteristic of the fuel supplied from the first nozzle head is to generate a monitoring image through an image sensor and compare the monitoring image with a reference image. Then, the detection signal is determined according to the comparison result.  
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