TW201907665A - Physically unclonable function circuit, and system and integrated circuit having the function - Google Patents

Physically unclonable function circuit, and system and integrated circuit having the function Download PDF

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TW201907665A
TW201907665A TW107107602A TW107107602A TW201907665A TW 201907665 A TW201907665 A TW 201907665A TW 107107602 A TW107107602 A TW 107107602A TW 107107602 A TW107107602 A TW 107107602A TW 201907665 A TW201907665 A TW 201907665A
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physical unclonable
reference voltage
voltage
circuit
functional units
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TWI769224B (en
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朴商旭
金大玄
盧美貞
博赫丹 卡蘋斯奇
李容基
崔允赫
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南韓商三星電子股份有限公司
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    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/71Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information

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Abstract

A physical unclonable function (PUF) circuit with a low bit error rate, a PUF system including the same and an integrated circuit having a physical unclonable function are provided. The PUF circuit includes a plurality of PUF cells each configured to generate an output voltage by dividing a power voltage, a reference voltage generator configured to generate a first reference voltage by dividing the power voltage, and a comparing unit configured to sequentially compare the output voltages of the plurality of PUF cells with the first reference voltage to output data values of the plurality of PUF cells.

Description

物理不可克隆功能電路、系統及具有此功能的積體電路Physical unclonable functional circuit, system and integrated circuit with the same

本發明是有關於一種安全技術,且特別是有關於一種物理不可克隆功能(PUF)電路。This invention relates to a security technique and, more particularly, to a physical unclonable function (PUF) circuit.

隨著有線通訊及無線通訊技術以及智慧裝置相關技術的近期快速進步,對於建立安全系統以便能夠安全地使用所述技術的需要也日益增加。因此,具有物理不可克隆功能的安全技術得到人們的關注。物理不可克隆功能電路是指在半導體晶片中實作並利用在製造工藝期間產生的工藝偏差來生成不可預測的亂數字值的電路。通過使用物理不可克隆功能電路生成密鑰,可基本防止對儲存在安全裝置中的例如認證密鑰等重要密鑰的複製。With the recent rapid advancement of wired communication and wireless communication technologies and smart device related technologies, there is an increasing demand for establishing a security system so that the technology can be safely used. Therefore, security technologies with physical unclonability have received attention. A physically unclonable functional circuit refers to a circuit implemented in a semiconductor wafer and utilizing process variations generated during the fabrication process to generate unpredictable random digital values. By generating a key using the physical unclonable function circuit, copying of important keys such as an authentication key stored in the secure device can be substantially prevented.

本發明概念提供一種具有低位元誤碼率(bit error rate,BER)的物理不可克隆功能(physical unclonable function,PUF)電路以及包括所述物理不可克隆功能電路的系統及積體電路。The inventive concept provides a physical unclonable function (PUF) circuit having a low bit error rate (BER) and a system and an integrated circuit including the physical unclonable function circuit.

根據本發明概念的一方面,提供一種物理不可克隆功能(PUF)電路。所述物理不可克隆功能(PUF)電路包括:多個物理不可克隆功能單元,分別被配置成通過對電源電壓進行分壓來產生輸出電壓;參考電壓產生器,被配置成通過對所述電源電壓進行分壓來產生第一參考電壓;以及比較單元,被配置成將所述多個物理不可克隆功能單元的所述輸出電壓與所述第一參考電壓依序進行比較,以輸出所述多個物理不可克隆功能單元的資料值。According to an aspect of the inventive concept, a physical unclonable function (PUF) circuit is provided. The physical unclonable function (PUF) circuit includes: a plurality of physical unclonable functional units configured to respectively generate an output voltage by dividing a power supply voltage; a reference voltage generator configured to pass the power supply voltage Performing a partial voltage to generate a first reference voltage; and a comparing unit configured to sequentially compare the output voltage of the plurality of physical unclonable functional units with the first reference voltage to output the plurality of Physical data values of functional units that cannot be cloned.

根據本發明概念的另一方面,提供一種物理不可克隆功能(PUF)系統。所述物理不可克隆功能(PUF)系統包括控制器以及物理不可克隆功能電路,所述物理不可克隆功能電路包括多個物理不可克隆功能單元。所述物理不可克隆功能電路被配置成將所述多個物理不可克隆功能單元的輸出電壓與參考電壓進行比較以產生物理不可克隆功能資料及有效性資料,所述物理不可克隆功能資料包括所述多個物理不可克隆功能單元的資料值,所述有效性資料指示所述多個物理不可克隆功能單元的所述資料值的有效性。所述控制器被配置成控制所述物理不可克隆功能電路並基於所述物理不可克隆功能資料及所述有效性資料來產生密鑰。According to another aspect of the inventive concept, a physical unclonable function (PUF) system is provided. The physical unclonable function (PUF) system includes a controller and a physical unclonable function circuit including a plurality of physical unclonable functional units. The physical unclonable function circuit is configured to compare an output voltage of the plurality of physical unclonable functional units with a reference voltage to generate physical unclonable functional data and validity data, the physical unclonable functional data comprising the A data value of a plurality of physical unclonable functional units, the validity data indicating validity of the data values of the plurality of physical unclonable functional units. The controller is configured to control the physical unclonable function circuit and generate a key based on the physical unclonable functional data and the validity data.

根據本發明概念的另一方面,提供一種積體電路。所述積體電路具有物理不可克隆功能(PUF)電路,所述物理不可克隆功能電路包括多個物理不可克隆功能單元,所述多個物理不可克隆功能單元分別被配置成通過基於至少兩個電阻器對電源電壓進行分壓來產生輸出電壓。所述物理不可克隆功能電路還包括參考電壓產生器,所述參考電壓產生器被配置成通過基於電阻器串對所述電源電壓進行分壓來產生第一參考電壓、第二參考電壓及第三參考電壓。所述第二參考電壓高於所述第一參考電壓,且所述第三參考電壓低於所述第二參考電壓。所述物理不可克隆功能電路還包括比較電路,所述比較電路被配置成將所述多個物理不可克隆功能單元的所述輸出電壓與所述第一參考電壓、所述第二參考電壓及所述第三參考電壓中的每一者進行比較,並被配置成輸出比較結果。另外,所述物理不可克隆功能電路包括組合邏輯,所述組合邏輯被配置成基於所述比較結果來產生指示所述多個物理不可克隆功能單元中的每一者的有效性的有效性資料。According to another aspect of the inventive concept, an integrated circuit is provided. The integrated circuit has a physical unclonable function (PUF) circuit including a plurality of physical unclonable functional units, the plurality of physical unclonable functional units being respectively configured to pass at least two resistors based on The device divides the supply voltage to generate an output voltage. The physical unclonable function circuit further includes a reference voltage generator configured to generate a first reference voltage, a second reference voltage, and a third by dividing the power supply voltage based on the resistor string Reference voltage. The second reference voltage is higher than the first reference voltage, and the third reference voltage is lower than the second reference voltage. The physical unclonable function circuit further includes a comparison circuit configured to convert the output voltage of the plurality of physical unclonable functional units with the first reference voltage, the second reference voltage, and Each of the third reference voltages is compared and configured to output a comparison result. Additionally, the physical unclonable function circuit includes combinational logic configured to generate validity data indicative of validity of each of the plurality of physical unclonable functional units based on the comparison.

在下文中,現將參照圖式更充分地闡述本發明概念。In the following, the inventive concept will now be more fully explained with reference to the drawings.

圖1是根據本發明概念示例性實施例的物理不可克隆功能(PUF)系統1000的方塊圖。FIG. 1 is a block diagram of a physical unclonable function (PUF) system 1000, in accordance with an exemplary embodiment of the inventive concept.

物理不可克隆功能系統1000可安裝在其中執行資料編碼或安全認證的各種類型的電子裝置中。物理不可克隆功能系統1000可回應於來自外部裝置(例如,外部處理器)的認證密鑰請求信號REQ產生認證密鑰KEY,並將認證密鑰KEY提供到所述外部裝置或另一個外部裝置(例如,編碼模組或認證模組)。The physical unclonable function system 1000 can be installed in various types of electronic devices in which data encoding or security authentication is performed. The physical unclonable function system 1000 may generate an authentication key KEY in response to an authentication key request signal REQ from an external device (eg, an external processor), and provide the authentication key KEY to the external device or another external device ( For example, an encoding module or an authentication module).

參照圖1,物理不可克隆功能系統1000可包括物理不可克隆功能電路100、控制器200及非揮發性記憶體300。物理不可克隆功能系統1000可通過半導體工藝來製造。在示例性實施例中,物理不可克隆功能電路100、控制器200及非揮發性記憶體300可形成在單個半導體晶片上或者不同的半導體晶片上。Referring to FIG. 1, the physical unclonable function system 1000 can include a physical unclonable function circuit 100, a controller 200, and a non-volatile memory 300. The physical unclonable functional system 1000 can be fabricated by a semiconductor process. In an exemplary embodiment, physical unclonable functional circuit 100, controller 200, and non-volatile memory 300 may be formed on a single semiconductor wafer or on different semiconductor wafers.

控制器200可基於由物理不可克隆功能電路100提供的物理不可克隆功能資料PDT以及有效性資料VDT來產生認證密鑰KEY。控制器200可包括控制邏輯210及密鑰產生器220。The controller 200 can generate the authentication key KEY based on the physical unclonable function data PDT and the validity data VDT provided by the physical unclonable function circuit 100. Controller 200 can include control logic 210 and key generator 220.

控制邏輯210可產生用於控制物理不可克隆功能電路100的操作的控制信號CON。舉例來說,控制信號CON可包括物理不可克隆功能單元選擇信號、參考電壓設置信號、模式信號、時鐘信號或類似信號。Control logic 210 may generate control signal CON for controlling the operation of physical unclonable function circuit 100. For example, the control signal CON may include a physical unclonable functional unit selection signal, a reference voltage setting signal, a mode signal, a clock signal, or the like.

密鑰產生器220可基於物理不可克隆功能資料PDT產生認證密鑰KEY。在示例性實施例中,密鑰產生器220可基於根據有效性資料VDT從物理不可克隆功能資料PDT中所包含的資料值中選擇的有效資料值產生認證密鑰KEY。The key generator 220 may generate an authentication key KEY based on the physical unclonable function material PDT. In an exemplary embodiment, the key generator 220 may generate the authentication key KEY based on the valid material value selected from the material values contained in the physical unclonable function material PDT based on the validity data VDT.

物理不可克隆功能電路100可基於在半導體製造工藝期間造成的電阻元件之間的不匹配(mismatch)(或被稱為電阻元件的電阻值的誤差)來產生物理不可克隆功能資料PDT。物理不可克隆功能資料PDT在物理不可克隆功能電路100的設計階段中具有不可預測的隨機值。另外,物理不可克隆功能資料PDT基於上面形成有物理不可克隆功能電路100的半導體晶片的本徵性質而具有唯一值。因此,即使分別包括物理不可克隆功能電路100的半導體晶片是以相同的工藝製造,從一半導體晶片中所包括的物理不可克隆功能電路100輸出的物理不可克隆功能資料PDT也可不同於從另一個半導體晶片中所包括的物理不可克隆功能電路100輸出的物理不可克隆功能資料PDT。The physical unclonable function circuit 100 may generate the physical unclonable function data PDT based on a mismatch between the resistance elements (or an error referred to as a resistance value of the resistance element) caused during the semiconductor manufacturing process. The physical unclonable functional material PDT has unpredictable random values in the design phase of the physical unclonable functional circuit 100. In addition, the physical unclonable function data PDT has a unique value based on the intrinsic properties of the semiconductor wafer on which the physical unclonable function circuit 100 is formed. Therefore, even if the semiconductor wafer respectively including the physical unclonable function circuit 100 is manufactured by the same process, the physical unclonable function data PDT output from the physical unclonable function circuit 100 included in one semiconductor wafer can be different from the other The physical unclonable function data PDT output by the physical unclonable function circuit 100 included in the semiconductor wafer.

物理不可克隆功能電路100可包括物理不可克隆功能單元陣列110及參考電壓產生器120。The physical unclonable function circuit 100 can include a physical unclonable functional unit array 110 and a reference voltage generator 120.

物理不可克隆功能單元陣列110可包括多個物理不可克隆功能單元,且所述多個物理不可克隆功能單元可具有相同的結構。然而,所述多個物理不可克隆功能單元中的每一者可產生具有由內部電阻元件之間的不匹配引起的唯一電位的輸出電壓。The physical unclonable functional unit array 110 may include a plurality of physical unclonable functional units, and the plurality of physical unclonable functional units may have the same structure. However, each of the plurality of physical unclonable functional units can produce an output voltage having a unique potential caused by a mismatch between internal resistive elements.

參考電壓產生器120可產生用於確定所述多個物理不可克隆功能單元中的每一者的資料值的第一參考電壓,且可產生用於確定資料值的有效性的第二參考電壓及第三參考電壓。第二參考電壓高於第一參考電壓,且第三參考電壓低於第一參考電壓。The reference voltage generator 120 may generate a first reference voltage for determining a data value of each of the plurality of physical unclonable functional units, and may generate a second reference voltage for determining validity of the data value and Third reference voltage. The second reference voltage is higher than the first reference voltage, and the third reference voltage is lower than the first reference voltage.

舉例來說,當物理不可克隆功能單元的輸出電壓等於或高於第一參考電壓時,物理不可克隆功能電路100可將物理不可克隆功能單元的資料值確定為邏輯高(數位資料值為′1′)。當物理不可克隆功能單元的輸出電壓小於第一參考電壓時,物理不可克隆功能電路100可將物理不可克隆功能單元的資料值確定為邏輯低(數位資料值為′0′)。另外,當物理不可克隆功能單元的輸出電壓等於或高於第二參考電壓或者小於第三參考電壓時,物理不可克隆功能電路100可確定物理不可克隆功能單元的資料值為有效的。當物理不可克隆功能單元的輸出電壓小於第二參考電壓且等於或高於第三參考電壓時,物理不可克隆功能電路100可確定物理不可克隆功能單元的資料值為無效的。物理不可克隆功能電路100可產生多個物理不可克隆功能單元的資料值以及指示資料值中的每一者的有效性的有效性信號。物理不可克隆功能電路100可將資料值及有效性信號提供到控制器200來分別作為物理不可克隆功能資料PDT及有效性資料VDT。For example, when the output voltage of the physical unclonable functional unit is equal to or higher than the first reference voltage, the physical unclonable function circuit 100 may determine the data value of the physical unclonable functional unit as a logic high (the digital data value is '1 '). When the output voltage of the physical unclonable functional unit is less than the first reference voltage, the physical unclonable function circuit 100 may determine the data value of the physical unclonable functional unit to be logically low (the digital data value is '0'). In addition, when the output voltage of the physical unclonable functional unit is equal to or higher than the second reference voltage or less than the third reference voltage, the physical unclonable function circuit 100 may determine that the data value of the physical unclonable functional unit is valid. When the output voltage of the physical unclonable functional unit is less than the second reference voltage and equal to or higher than the third reference voltage, the physical unclonable function circuit 100 may determine that the data value of the physical unclonable functional unit is invalid. The physical unclonable function circuit 100 can generate a data value for a plurality of physical unclonable functional units and a validity signal indicating the validity of each of the data values. The physical unclonable function circuit 100 can provide the data value and the validity signal to the controller 200 as the physical unclonable function data PDT and the validity data VDT, respectively.

物理不可克隆功能單元的有效資料值指示物理不可克隆功能單元是穩定的,且物理不可克隆功能單元的無效資料值指示物理不可克隆功能單元是不穩定的。不穩定的物理不可克隆功能單元的資料值(即,不穩定的物理不可克隆功能單元的輸出電壓與參考電壓(例如,第一參考電壓)之間的比較結果)很可能會因例如電源電壓、溫度、老化或雜訊等因素而改變,且因此不使用不穩定的物理不可克隆功能單元來產生認證密鑰KEY。因此,控制器200的密鑰產生器220可基於有效性資料VDT從物理不可克隆功能資料PDT的資料值中選擇穩定的物理不可克隆功能單元的資料值(即,有效資料值),且可基於有效資料值產生認證密鑰KEY。The valid data value of the physical unclonable functional unit indicates that the physical unclonable functional unit is stable, and the invalid data value of the physical unclonable functional unit indicates that the physical unclonable functional unit is unstable. The data value of an unstable physical unclonable functional unit (ie, the comparison between the output voltage of an unstable physical unclonable functional unit and a reference voltage (eg, a first reference voltage)) is likely due to, for example, a power supply voltage, The temperature, aging, or noise is changed, and thus the unstable physical unclonable functional unit is not used to generate the authentication key KEY. Therefore, the key generator 220 of the controller 200 can select a data value (ie, a valid data value) of the stable physical unclonable functional unit from the data values of the physical unclonable function data PDT based on the validity data VDT, and can be based on The valid data value generates the authentication key KEY.

確定資料值的有效性(即,產生有效性資料VDT)可在反應於認證密鑰請求信號REQ產生認證密鑰KEY之前執行。舉例來說,確定資料值的有效性可在物理不可克隆功能電路100的製造工藝的測試過程中或者在物理不可克隆功能電路100的初始化過程或復位過程中執行。有效性資料VDT可儲存在非揮發性記憶體300中。非揮發性記憶體300可包括以下中的一者:一次可程式設計(one-time programmable,OTP)記憶體、唯讀記憶體(read only memory,ROM)、可程式設計唯讀記憶體(programmable ROM,PROM)、電可程式設計唯讀記憶體(electrically programmable ROM,EPROM)、電可抹除可程式設計唯讀記憶體(electrically erasable and programmable ROM,EEPROM)、快閃記憶體、相變隨機存取記憶體(phase-change RAM,PRAM)、磁性隨機存取記憶體(magnetic RAM,MRAM)、電阻式隨機存取記憶體(resistive RAM,RRAM)及鐵電式隨機存取記憶體(ferroelectric RAM,FRAM)。在示例性實施例中,非揮發性記憶體300可包括在控制器200或物理不可克隆功能電路100內部。Determining the validity of the data value (i.e., generating the validity data VDT) may be performed prior to generating the authentication key KEY in response to the authentication key request signal REQ. For example, determining the validity of the data value may be performed during the testing of the manufacturing process of the physical unclonable function circuit 100 or during the initialization process or reset process of the physical unclonable function circuit 100. The validity data VDT can be stored in the non-volatile memory 300. The non-volatile memory 300 can include one of the following: one-time programmable (OTP) memory, read only memory (ROM), programmable read-only memory (programmable) ROM, PROM), electrically programmable programmable ROM (EPROM), electrically erasable and programmable ROM (EEPROM), flash memory, random phase change Phase-change RAM (PRAM), magnetic random access memory (MRAM), resistive random access memory (RRAM), and ferroelectric random access memory (ferroelectric) RAM, FRAM). In an exemplary embodiment, non-volatile memory 300 may be included within controller 200 or physical unclonable function circuit 100.

控制器200可將由物理不可克隆功能電路100提供的有效性資料VDT儲存在非揮發性記憶體300中,並在稍後回應於認證密鑰請求信號REQ產生認證密鑰KEY時從非揮發性記憶體300讀取有效性資料VDT以及使用有效性資料VDT。The controller 200 can store the validity data VDT provided by the physical unclonable function circuit 100 in the non-volatile memory 300, and from the non-volatile memory when the authentication key KEY is generated later in response to the authentication key request signal REQ. The body 300 reads the validity data VDT and the validity data VDT.

在示例性實施例中,當產生認證密鑰KEY時,控制器200可從非揮發性記憶體300讀取有效性資料VDT,並從物理不可克隆功能電路100接收物理不可克隆功能資料PDT。控制器200可基於有效性資料VDT從物理不可克隆功能資料PDT中選擇有效資料值,並基於有效資料值產生認證密鑰KEY。In an exemplary embodiment, when the authentication key KEY is generated, the controller 200 may read the validity material VDT from the non-volatile memory 300 and receive the physical unclonable function material PDT from the physical unclonable function circuit 100. The controller 200 may select a valid data value from the physical unclonable function data PDT based on the validity data VDT, and generate an authentication key KEY based on the valid data value.

在另一個示例性實施例中,當產生認證密鑰KEY時,控制器200可基於有效性資料VDT選擇有效的物理不可克隆功能單元,且物理不可克隆功能電路100可產生包括僅有效的物理不可克隆功能單元的資料值的物理不可克隆功能資料PDT並將物理不可克隆功能資料PDT提供到控制器200。控制器200可基於所接收的物理不可克隆功能資料PDT產生認證密鑰KEY。在示例性實施例中,控制器200可輸出物理不可克隆功能資料PDT作為認證密鑰KEY。In another exemplary embodiment, when the authentication key KEY is generated, the controller 200 may select a valid physical unclonable functional unit based on the validity data VDT, and the physical unclonable functional circuit 100 may generate an effective physical only The physical unclonable functional data PDT of the data value of the cloning functional unit and the physical unclonable functional data PDT are provided to the controller 200. The controller 200 can generate an authentication key KEY based on the received physical unclonable function material PDT. In an exemplary embodiment, the controller 200 may output the physical unclonable function material PDT as the authentication key KEY.

圖2是根據本發明概念示例性實施例的物理不可克隆功能電路100a的電路圖。圖3A示出多個物理不可克隆功能單元的輸出電壓的分佈。圖3B示出第一參考電壓的分佈。圖3C是用於根據第二參考電壓及第三參考電壓來解釋死區的視圖。2 is a circuit diagram of a physical unclonable function circuit 100a, in accordance with an exemplary embodiment of the inventive concept. Figure 3A shows the distribution of the output voltages of a plurality of physically unclonable functional units. FIG. 3B shows the distribution of the first reference voltage. FIG. 3C is a view for explaining a dead zone based on the second reference voltage and the third reference voltage.

參照圖2,物理不可克隆功能電路100a可包括物理不可克隆功能單元陣列110、參考電壓產生器120、比較電路130、組合邏輯140及單元選擇電路150。Referring to FIG. 2, the physical unclonable function circuit 100a may include a physical unclonable functional unit array 110, a reference voltage generator 120, a comparison circuit 130, a combinational logic 140, and a unit selection circuit 150.

物理不可克隆功能單元陣列110可包括多個物理不可克隆功能單元CL1至CLn,且所述多個物理不可克隆功能單元CL1至CLn中的每一者可使用電阻元件RE1及RE2對電源電壓VDD進行分壓,以產生輸出電壓。The physical unclonable functional unit array 110 may include a plurality of physical unclonable functional units CL1 to CLn, and each of the plurality of physical unclonable functional units CL1 to CLn may perform power supply voltage VDD using the resistance elements RE1 and RE2 Divided to produce an output voltage.

舉例來說,以第一物理不可克隆功能單元CL1為例,第一物理不可克隆功能單元CL1可包括第一電阻元件RE1及第二電阻元件RE2。第一電阻元件RE1與第二電阻元件RE2可為同質(homogeneous)電阻元件。舉例來說,第一電阻元件RE1及第二電阻元件RE2可為電阻器或其中串聯連接有多個電阻器的電阻器串,且電阻器可為通孔(via)、金屬配線、多晶矽等。另外,電阻器可為可在製造工藝中實作的任何類型的電阻器。然而,電阻器並非僅限於此,且第一電阻元件RE1及第二電阻元件RE2也可為各種電阻元件,例如開關電容器(switched capacitor)或磁阻式元件。For example, taking the first physical unclonable functional unit CL1 as an example, the first physical unclonable functional unit CL1 may include a first resistive element RE1 and a second resistive element RE2. The first resistance element RE1 and the second resistance element RE2 may be homogeneous resistance elements. For example, the first resistive element RE1 and the second resistive element RE2 may be a resistor or a resistor string in which a plurality of resistors are connected in series, and the resistor may be a via, a metal wiring, a polysilicon or the like. Additionally, the resistor can be any type of resistor that can be implemented in a manufacturing process. However, the resistor is not limited thereto, and the first resistance element RE1 and the second resistance element RE2 may also be various resistance elements such as a switched capacitor or a magnetoresistive element.

第一電阻元件RE1與第二電阻元件RE2可串聯連接,且可向第一電阻元件RE1的一端施加電源電壓VDD。第一物理不可克隆功能單元CL1的輸出電壓可從第一電阻元件RE1與第二電阻元件RE2之間的連接節點CN1輸出。因此,第一電阻元件RE1與第二電阻元件RE2可作為分壓器(voltage divider)運行。The first resistance element RE1 and the second resistance element RE2 may be connected in series, and a power supply voltage VDD may be applied to one end of the first resistance element RE1. The output voltage of the first physical unclonable functional unit CL1 can be output from the connection node CN1 between the first resistive element RE1 and the second resistive element RE2. Therefore, the first resistive element RE1 and the second resistive element RE2 can operate as a voltage divider.

根據示例性實施例,第一電阻元件RE1與第二電阻元件RE2可具有相同的電阻值。詳細來說,第一電阻元件RE1的目標電阻值與第二電阻元件RE2的目標電阻值可相同。因此,第一物理不可克隆功能單元CL1的輸出電壓可為電源電壓VDD的一半。然而,第一電阻元件RE1的電阻值與第二電阻元件RE2的電阻值之間可因在半導體製造工藝期間出現的不匹配而產生差異,且所述電阻差異可表現為第一物理不可克隆功能單元CL1的輸出電壓的誤差。According to an exemplary embodiment, the first resistance element RE1 and the second resistance element RE2 may have the same resistance value. In detail, the target resistance value of the first resistance element RE1 and the target resistance value of the second resistance element RE2 may be the same. Therefore, the output voltage of the first physical unclonable functional unit CL1 can be half of the power supply voltage VDD. However, a difference between the resistance value of the first resistance element RE1 and the resistance value of the second resistance element RE2 may be caused by a mismatch occurring during the semiconductor manufacturing process, and the resistance difference may be expressed as a first physical unclonable function The error of the output voltage of cell CL1.

第一物理不可克隆功能單元CL1的資料值可基於第一物理不可克隆功能單元CL1的輸出電壓(即,第一物理不可克隆功能單元CL1的輸出電壓的誤差)來確定。輸出電壓的誤差越大,第一物理不可克隆功能單元CL1的資料值便可維持更穩定。因此,為增大第一電阻元件RE1與第二電阻元件RE2之間的不匹配,可將第一電阻元件RE1與第二電阻元件RE2設計成具有非常小的長度及寬度。The data value of the first physical unclonable functional unit CL1 may be determined based on the output voltage of the first physical unclonable functional unit CL1 (ie, the error of the output voltage of the first physical unclonable functional unit CL1). The larger the error of the output voltage, the more stable the data value of the first physical unclonable functional unit CL1. Therefore, in order to increase the mismatch between the first resistive element RE1 and the second resistive element RE2, the first resistive element RE1 and the second resistive element RE2 may be designed to have a very small length and width.

由於第一電阻元件RE1與第二電阻元件RE2是同質電阻元件,因此第一電阻元件RE1及第二電阻元件RE2中的每一者的電阻值隨著例如溫度、電壓、測試條件的改變或者環境的改變(例如,老化)而發生的變化可表現出相同的趨勢。舉例來說,第一電阻元件RE1的電阻值隨著溫度升高而增大可與第二電阻元件RE2的電阻值的增大相似。因此,即使當環境改變時,第一物理不可克隆功能單元CL1的輸出電壓仍可維持相對均勻。Since the first resistive element RE1 and the second resistive element RE2 are homogenous resistive elements, the resistance value of each of the first resistive element RE1 and the second resistive element RE2 varies with, for example, temperature, voltage, test conditions, or environment. Changes that occur with changes (eg, aging) can show the same trend. For example, the resistance value of the first resistance element RE1 increases as the temperature increases, which may be similar to the increase in the resistance value of the second resistance element RE2. Therefore, even when the environment changes, the output voltage of the first physical unclonable functional unit CL1 can be maintained relatively uniform.

其他物理不可克隆功能單元CL2至CLn的配置及結構與第一物理不可克隆功能單元CL1的配置及結構相同。因此,將省略重複的說明。可從其他物理不可克隆功能單元CL2至CLn中的每一者中所包括的第一電阻元件RE1與第二電阻元件RE2的連接節點CN2至CNn輸出輸出電壓。然而,所述多個物理不可克隆功能單元CL1至CLn中的每一者的第一電阻元件RE1與第二電阻元件RE2的不匹配程度是隨機的,且因此,所述多個物理不可克隆功能單元CL1至CLn的輸出電壓可彼此不同。所述多個物理不可克隆功能單元CL1至CLn的輸出電壓的分佈可如圖3A所示。The configuration and structure of the other physical unclonable functional units CL2 to CLn are the same as those of the first physical unclonable functional unit CL1. Therefore, the repeated description will be omitted. The output voltage may be output from the connection nodes CN2 to CNn of the first resistance element RE1 and the second resistance element RE2 included in each of the other physical unclonable functional units CL2 to CLn. However, the degree of mismatch between the first resistive element RE1 and the second resistive element RE2 of each of the plurality of physical unclonable functional units CL1 to CLn is random, and thus, the plurality of physical unclonable functions The output voltages of the cells CL1 to CLn may be different from each other. The distribution of the output voltages of the plurality of physical unclonable functional units CL1 to CLn may be as shown in FIG. 3A.

參照圖3A,水準軸線表示物理不可克隆功能單元的輸出電壓Vcell,且垂直軸線表示與每一個輸出電壓Vcell對應的物理不可克隆功能單元的數目。如圖3A所示,大部分物理不可克隆功能單元可具有與電源電壓VDD的一半(VDD/2)對應或鄰近VDD/2的輸出電壓Vcell,且所述多個物理不可克隆功能單元CL1至CLn的輸出電壓可具有正態分佈。Referring to FIG. 3A, the horizontal axis represents the output voltage Vcell of the physical unclonable functional unit, and the vertical axis represents the number of physical unclonable functional units corresponding to each of the output voltages Vcell. As shown in FIG. 3A, most of the physical unclonable functional units may have an output voltage Vcell corresponding to or adjacent to a half of the power supply voltage VDD (VDD/2), and the plurality of physical unclonable functional units CL1 to CLn The output voltage can have a normal distribution.

再次參照圖2,單元選擇電路150可選擇並輸出所述多個物理不可克隆功能單元CL1至CLn的輸出電壓中的一者,且可依序地選擇並輸出所述多個物理不可克隆功能單元CL1至CLn的輸出電壓。Referring again to FIG. 2, the cell selection circuit 150 can select and output one of the output voltages of the plurality of physical unclonable functional units CL1 to CLn, and can sequentially select and output the plurality of physical unclonable functional units. The output voltage of CL1 to CLn.

單元選擇電路150可包括多個單元選擇開關SSW1至SSWn以及單元選擇器151,所述多個單元選擇開關SSW1至SSWn分別連接到所述多個物理不可克隆功能單元CL1至CLn。The cell selection circuit 150 may include a plurality of cell selection switches SSW1 to SSWn and a cell selector 151 that are respectively connected to the plurality of physical unclonable functional cells CL1 to CLn.

單元選擇器151可控制所述多個單元選擇開關SSW1至SSWn的接通及斷開。舉例來說,單元選擇器151可產生分別與所述多個單元選擇開關SSW1至SSWn對應的通斷控制信號,並將所述通斷控制信號提供到所述多個單元選擇開關SSW1至SSWn中的每一者。單元選擇器151可接通所述多個單元選擇開關SSW1至SSWn中的一者,並斷開其他單元選擇開關。The unit selector 151 can control the turning on and off of the plurality of unit selection switches SSW1 to SSWn. For example, the cell selector 151 may generate an on-off control signal respectively corresponding to the plurality of cell selection switches SSW1 to SSWn, and provide the on-off control signal to the plurality of cell selection switches SSW1 to SSWn Each of them. The unit selector 151 may turn on one of the plurality of unit selection switches SSW1 to SSWn and disconnect the other unit selection switches.

在示例性實施例中,單元選擇器151可與時鐘信號同步地依序接通所述多個單元選擇開關SSW1至SSWn。因此,可依序輸出物理不可克隆功能單元CL1至CLn的輸出電壓。In an exemplary embodiment, the unit selector 151 may sequentially turn on the plurality of unit selection switches SSW1 to SSWn in synchronization with a clock signal. Therefore, the output voltages of the physical unclonable functional units CL1 to CLn can be sequentially output.

在另一個示例性實施例中,單元選擇器151可基於從外部(例如,從圖1所示控制器200)提供的控制信號CON依序接通從所述多個單元選擇開關SSW1至SSWn中選擇的一些單元選擇開關。從所述多個物理不可克隆功能單元CL1至CLn選擇的這些物理不可克隆功能單元的輸出電壓可依序輸出到比較電路130。In another exemplary embodiment, the unit selector 151 may sequentially turn on from among the plurality of unit selection switches SSW1 to SSWn based on a control signal CON supplied from the outside (for example, from the controller 200 shown in FIG. 1). Some of the unit selection switches selected. The output voltages of the physical unclonable functional units selected from the plurality of physical unclonable functional units CL1 to CLn may be sequentially output to the comparison circuit 130.

參考電壓產生器120可使用第三電阻元件RE3及第四電阻元件RE4對電源電壓VDD進行分壓以產生參考電壓,即第一參考電壓Vref、第二參考電壓Vref_H及第三參考電壓Vref_L。如以上參照圖1所闡述,第一參考電壓Vref用於確定所述多個物理不可克隆功能單元CL1至CLn中的每一者的資料值,且第二參考電壓Vref_H及第三參考電壓Vref_L用於確定所述多個物理不可克隆功能單元CL1至CLn的資料值的有效性。The reference voltage generator 120 may divide the power supply voltage VDD using the third resistive element RE3 and the fourth resistive element RE4 to generate a reference voltage, that is, a first reference voltage Vref, a second reference voltage Vref_H, and a third reference voltage Vref_L. As explained above with reference to FIG. 1, the first reference voltage Vref is used to determine the data value of each of the plurality of physical unclonable functional units CL1 to CLn, and the second reference voltage Vref_H and the third reference voltage Vref_L are used. Determining the validity of the data values of the plurality of physical unclonable functional units CL1 to CLn.

參考電壓產生器120可包括第三電阻元件RE3及第四電阻元件RE4。第三電阻元件RE3與第四電阻元件RE4可為同質電阻元件,且可與第一電阻元件RE1及第二電阻元件RE2同質或異質。舉例來說,第三電阻元件RE3與第四電阻元件RE4可為電阻器串。The reference voltage generator 120 may include a third resistance element RE3 and a fourth resistance element RE4. The third resistive element RE3 and the fourth resistive element RE4 may be homogenous resistive elements and may be homogenous or heterogeneous with the first resistive element RE1 and the second resistive element RE2. For example, the third resistive element RE3 and the fourth resistive element RE4 may be resistor strings.

第三電阻元件RE3與第四電阻元件RE4可串聯連接,且可向第三電阻元件RE3的一端施加電源電壓VDD。第三電阻元件RE3與第四電阻元件RE4可作為分壓器運行。第一參考電壓Vref可從第三電阻元件RE3與第四電阻元件RE4之間的連接節點CNR輸出。The third resistance element RE3 and the fourth resistance element RE4 may be connected in series, and a power supply voltage VDD may be applied to one end of the third resistance element RE3. The third resistive element RE3 and the fourth resistive element RE4 can operate as a voltage divider. The first reference voltage Vref may be output from a connection node CNR between the third resistance element RE3 and the fourth resistance element RE4.

在示例性實施例中,第三電阻元件RE3的電阻值與第四電阻元件RE4的電阻值可相同。詳細來說,第三電阻元件RE3的目標電阻值與第四電阻元件RE4的目標電阻值可相同。因此,第一參考電壓Vref可為電源電壓VDD的一半。然而,第三電阻元件RE3的電阻值與第四電阻元件RE4的電阻值之間可因在半導體製造工藝中出現的不匹配而產生差異,且所述電阻差異可表現為第一參考電壓Vref的誤差。In an exemplary embodiment, the resistance value of the third resistance element RE3 may be the same as the resistance value of the fourth resistance element RE4. In detail, the target resistance value of the third resistance element RE3 and the target resistance value of the fourth resistance element RE4 may be the same. Therefore, the first reference voltage Vref can be half of the power supply voltage VDD. However, a difference between the resistance value of the third resistance element RE3 and the resistance value of the fourth resistance element RE4 may be caused by a mismatch occurring in the semiconductor manufacturing process, and the resistance difference may be expressed as the first reference voltage Vref error.

第一參考電壓Vref是用於確定所述多個物理不可克隆功能單元CL1至CLn的資料值的參考電壓,且因此應具有非常小的誤差。因此,為減小第三電阻元件RE3與第四電阻元件RE4之間的不匹配,可將第三電阻元件RE3與第四電阻元件RE4設計成具有長的長度及寬的寬度。舉例來說,可將第三電阻元件RE3與第四電阻元件RE4設計成具有比第一電阻元件RE1及第二電阻元件RE2大的長度及寬的寬度。The first reference voltage Vref is a reference voltage for determining the data values of the plurality of physical unclonable functional units CL1 to CLn, and thus should have a very small error. Therefore, in order to reduce the mismatch between the third resistive element RE3 and the fourth resistive element RE4, the third resistive element RE3 and the fourth resistive element RE4 may be designed to have a long length and a wide width. For example, the third resistive element RE3 and the fourth resistive element RE4 may be designed to have a larger length and a wider width than the first resistive element RE1 and the second resistive element RE2.

第一參考電壓Vref的分佈可如圖3B所示。在圖3B中,第一參考電壓Vref的分佈D2示出分別從在不同的半導體晶片上實作的物理不可克隆功能電路輸出的第一參考電壓的分佈,且可遵循正態分佈。The distribution of the first reference voltage Vref can be as shown in FIG. 3B. In FIG. 3B, the distribution D2 of the first reference voltage Vref shows the distribution of the first reference voltage output from the physical unclonable function circuits implemented on different semiconductor wafers, respectively, and may follow a normal distribution.

參照圖3B,與所述多個物理不可克隆功能單元CL1至CLn的輸出電壓的分佈D1相比,第一參考電壓Vref的分佈D2可具有明顯小的變化。所述多個物理不可克隆功能單元CL1至CLn的資料值可通過將所述多個物理不可克隆功能單元CL1至CLn的輸出電壓與第一參考電壓Vref進行比較來確定。舉例來說,具有與第一參考電壓Vref相等或比第一參考電壓Vref高的輸出電壓的物理不可克隆功能單元的資料值可被確定為邏輯高(數位資料值為′1′),且具有比第一參考電壓Vref小的輸出電壓的物理不可克隆功能單元的資料值可被確定為邏輯低(數位資料值為′0′)。Referring to FIG. 3B, the distribution D2 of the first reference voltage Vref may have a significantly small change compared to the distribution D1 of the output voltages of the plurality of physical unclonable functional units CL1 to CLn. The data values of the plurality of physical unclonable functional units CL1 to CLn may be determined by comparing the output voltages of the plurality of physical unclonable functional units CL1 to CLn with the first reference voltage Vref. For example, a data value of a physical unclonable functional unit having an output voltage equal to or higher than the first reference voltage Vref may be determined to be logic high (digital data value is '1') and has The data value of the physical unclonable functional unit of the output voltage smaller than the first reference voltage Vref can be determined to be logic low (the digital data value is '0').

再次參照圖2,參考電壓產生器120還可輸出第二參考電壓Vref_H及第三參考電壓Vref_L。如上所述,第三電阻元件RE3及第四電阻元件RE4可由包括多個電阻器的電阻器串形成,且第二參考電壓Vref_H可從第三電阻元件RE3的多個節點中的一者輸出,且第三參考電壓Vref_L可從第四電阻元件RE4的多個節點中的一者輸出。因此,第二參考電壓Vref_H高於第一參考電壓Vref,且第三參考電壓Vref_L低於第一參考電壓Vref。Referring again to FIG. 2, the reference voltage generator 120 may also output a second reference voltage Vref_H and a third reference voltage Vref_L. As described above, the third resistive element RE3 and the fourth resistive element RE4 may be formed of a resistor string including a plurality of resistors, and the second reference voltage Vref_H may be output from one of a plurality of nodes of the third resistive element RE3, And the third reference voltage Vref_L may be output from one of a plurality of nodes of the fourth resistance element RE4. Therefore, the second reference voltage Vref_H is higher than the first reference voltage Vref, and the third reference voltage Vref_L is lower than the first reference voltage Vref.

參照圖3C,第二參考電壓Vref_H與第三參考電壓Vref_L之間的電壓範圍可被設置為死區。所述多個物理不可克隆功能單元CL1至CLn中的具有處於死區中的輸出電壓的物理不可克隆功能單元可被確定為不穩定的,且所述物理不可克隆功能單元的資料值可被確定為無效的。第二參考電壓Vref_H及第三參考電壓Vref_L可通過考慮到第一參考電壓Vref的分佈D2、比較器(例如,第一比較器至第三比較器131、132及133)的偏移以及雜訊效應來進行設置。Referring to FIG. 3C, a voltage range between the second reference voltage Vref_H and the third reference voltage Vref_L may be set as a dead zone. A physical unclonable functional unit having an output voltage in a dead zone among the plurality of physical unclonable functional units CL1 to CLn may be determined to be unstable, and a material value of the physical unclonable functional unit may be determined Invalid. The second reference voltage Vref_H and the third reference voltage Vref_L can be obtained by considering the distribution D2 of the first reference voltage Vref, the offset of the comparators (for example, the first to third comparators 131, 132, and 133), and the noise. Effect to set.

可使用比較電路130及組合邏輯140來確定物理不可克隆功能單元的輸出電壓是否位於死區中(即,物理不可克隆功能單元的資料值的有效性)。Comparison circuit 130 and combinational logic 140 can be used to determine if the output voltage of the physical unclonable functional unit is in a dead zone (ie, the validity of the data value of the physical unclonable functional unit).

比較電路130可將所述多個物理不可克隆功能單元CL1至CLn的輸出電壓與第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L進行比較,並輸出比較結果。比較電路130可通過將從單元選擇電路150輸出的物理不可克隆功能單元的輸出電壓Vcell與第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L進行比較來依序輸出關於所述多個物理不可克隆功能單元CL1至CLn的比較結果。The comparison circuit 130 may compare the output voltages of the plurality of physical unclonable functional units CL1 to CLn with the first to third reference voltages Vref, Vref_H, and Vref_L, and output a comparison result. The comparison circuit 130 can sequentially output the plurality of physical non-uniforms by comparing the output voltage Vcell of the physical unclonable functional unit outputted from the unit selection circuit 150 with the first reference voltage to the third reference voltages Vref, Vref_H, and Vref_L. The comparison result of the cloning functional units CL1 to CLn.

比較電路130可包括第一比較器至第三比較器131、132及133。第一比較器131可將物理不可克隆功能單元的輸出電壓Vcell與第一參考電壓Vref進行比較,並輸出比較結果(在下文中稱為第一比較結果)。舉例來說,如果物理不可克隆功能單元的輸出電壓Vcell等於或高於第一參考電壓Vref,則可輸出′1′,且如果物理不可克隆功能單元的輸出電壓Vcell小於第一參考電壓Vref,則可輸出′0′。然而,比較結果並非僅限於此,且也可輸出相反的結果。比較結果可被作為物理不可克隆功能單元的資料值輸出。The comparison circuit 130 may include first to third comparators 131, 132, and 133. The first comparator 131 may compare the output voltage Vcell of the physical unclonable functional unit with the first reference voltage Vref, and output a comparison result (hereinafter referred to as a first comparison result). For example, if the output voltage Vcell of the physical unclonable functional unit is equal to or higher than the first reference voltage Vref, then '1' may be output, and if the output voltage Vcell of the physical unclonable functional unit is less than the first reference voltage Vref, then It can output '0'. However, the comparison result is not limited to this, and the opposite result can also be output. The comparison result can be output as a data value of a physical unclonable functional unit.

第二比較器132可將物理不可克隆功能單元的輸出電壓Vcell與第二參考電壓Vref_H進行比較,並輸出比較結果(在下文中稱為第二比較結果)。舉例來說,如果物理不可克隆功能單元的輸出電壓Vcell等於或高於第二參考電壓Vref_H,則可輸出′1′,且如果物理不可克隆功能單元的輸出電壓Vcell小於第二參考電壓Vref_H,則可輸出′0′。作為另外一種選擇,可輸出相反的結果。The second comparator 132 may compare the output voltage Vcell of the physical unclonable functional unit with the second reference voltage Vref_H, and output a comparison result (hereinafter referred to as a second comparison result). For example, if the output voltage Vcell of the physical unclonable functional unit is equal to or higher than the second reference voltage Vref_H, "1" may be output, and if the output voltage Vcell of the physical unclonable functional unit is smaller than the second reference voltage Vref_H, then It can output '0'. Alternatively, the opposite result can be output.

第三比較器133可將物理不可克隆功能單元的輸出電壓Vcell與第三參考電壓Vref_L進行比較,並輸出比較結果(在下文中稱為第三比較結果)。舉例來說,如果物理不可克隆功能單元的輸出電壓Vcell等於或高於第三參考電壓Vref_L,則可輸出′1′,且如果物理不可克隆功能單元的輸出電壓Vcell小於第三參考電壓Vref_L,則可輸出′0′。作為另外一種選擇,可輸出相反的結果。The third comparator 133 may compare the output voltage Vcell of the physical unclonable functional unit with the third reference voltage Vref_L, and output a comparison result (hereinafter referred to as a third comparison result). For example, if the output voltage Vcell of the physical unclonable functional unit is equal to or higher than the third reference voltage Vref_L, "1" may be output, and if the output voltage Vcell of the physical unclonable functional unit is smaller than the third reference voltage Vref_L, then It can output '0'. Alternatively, the opposite result can be output.

比較電路130可將關於所述多個物理不可克隆功能單元CL1至CLn中的每一者的第一比較結果至第三比較結果提供到組合邏輯140。The comparison circuit 130 may provide the first comparison result to the third comparison result regarding each of the plurality of physical unclonable functional units CL1 to CLn to the combinational logic 140.

同時,儘管在圖2中比較電路130被示出為包括三個比較器(例如,第一比較器至第三比較器131、132及133),然而比較電路130並非僅限於此。比較電路130可包括一個或兩個比較器,且所述一個或兩個比較器可以時間分享(time sharing)方式將物理不可克隆功能單元的輸出電壓Vcell與第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L進行比較。Meanwhile, although the comparison circuit 130 is illustrated as including three comparators (for example, the first to third comparators 131, 132, and 133) in FIG. 2, the comparison circuit 130 is not limited thereto. The comparison circuit 130 may include one or two comparators, and the one or two comparators may time the output voltage Vcell of the physical unclonable functional unit and the first reference voltage to the third reference voltage Vref in a time sharing manner. , Vref_H and Vref_L are compared.

組合邏輯140可由多個邏輯閘形成,且可基於關於所述多個物理不可克隆功能單元CL1至CLn中的每一者的第一比較結果來產生物理不可克隆功能資料PDT(即,所述多個物理不可克隆功能單元CL1至CLn的資料值)。另外,組合邏輯140可基於第一比較結果至第三比較結果中的至少兩個比較結果來產生指示物理不可克隆功能單元的資料值的有效性(即,物理不可克隆功能單元的穩定性(或有效性))的有效性信號。組合邏輯140可輸出所述多個物理不可克隆功能單元CL1至CLn的有效性信號作為有效性資料VDT。組合邏輯140可被稱為有效性確定邏輯。The combinational logic 140 may be formed by a plurality of logic gates and may generate a physical unclonable functional material PDT based on a first comparison result for each of the plurality of physical unclonable functional units CL1 to CLn (ie, the plurality of The physical value of the functional elements CL1 to CLn cannot be cloned). Additionally, combinational logic 140 may generate validity of the data value indicating the physical unclonable functional unit based on at least two of the first comparison result to the third comparison result (ie, the stability of the physical unclonable functional unit (or Validity)) The validity signal. The combinational logic 140 may output a validity signal of the plurality of physical unclonable functional units CL1 to CLn as the validity data VDT. Combinational logic 140 may be referred to as validity determination logic.

組合邏輯140可基於第一比較結果至第三比較結果中的至少兩個比較結果來確定物理不可克隆功能單元的輸出電壓是否處於死區中,並將具有處於死區中的輸出電壓的物理不可克隆功能單元的有效性信號產生為′0′,以及將具有處於死區外的輸出電壓的物理不可克隆功能單元的有效性信號產生為′1′。以下將參照圖4A至圖4C闡述組合邏輯140的有效性確定方法。The combinational logic 140 may determine whether the output voltage of the physical unclonable functional unit is in a dead zone based on at least two of the first comparison result to the third comparison result, and may have a physical non-existing output voltage in the dead zone The validity signal of the clone functional unit is generated as '0', and the validity signal of the physical unclonable functional unit having the output voltage outside the dead zone is generated as '1'. The validity determination method of the combinational logic 140 will be explained below with reference to FIGS. 4A to 4C.

如上所述,根據本發明概念示例性實施例的物理不可克隆功能電路100a可通過將所述多個物理不可克隆功能單元CL1至CLn的輸出電壓與第一參考電壓Vref進行比較來產生物理不可克隆功能資料PDT,所述多個物理不可克隆功能單元CL1至CLn的輸出電壓是通過使用電阻元件對電源電壓VDD進行分壓而產生。由於對於在對電源電壓VDD進行分壓時所使用的電阻元件來說例如溫度、電壓、測試條件的改變或者環境的改變(例如,老化)是相同的,因此所述多個物理不可克隆功能單元CL1至CLn的輸出電壓以及第一參考電壓Vref可維持相對均勻,而不論環境如何改變。因此,不穩定的物理不可克隆功能單元的數目可為小的。As described above, the physical unclonable function circuit 100a according to an exemplary embodiment of the inventive concept can generate a physical unclonable by comparing the output voltages of the plurality of physical unclonable functional units CL1 to CLn with the first reference voltage Vref. The function data PDT, the output voltage of the plurality of physical unclonable functional units CL1 to CLn is generated by dividing the power supply voltage VDD using a resistance element. The plurality of physical unclonable functional units are the same for a resistive element used when the power supply voltage VDD is divided, for example, a change in temperature, voltage, test conditions, or environmental change (eg, aging) The output voltages of CL1 to CLn and the first reference voltage Vref can be maintained relatively uniform regardless of the environment. Therefore, the number of unstable physical unclonable functional units can be small.

另外,為剔除不穩定的物理不可克隆功能單元並選擇穩定的物理不可克隆功能單元(或有效資料值),物理不可克隆功能電路100a可產生第二參考電壓Vref_H及第三參考電壓Vref_L,並基於第二參考電壓Vref_H及第三參考電壓Vref_L設置死區。通過剔除可能會產生不穩定的資料值的潛在不穩定的物理不可克隆功能單元以及通過使用具有充足餘裕(margin)的強的物理不可克隆功能單元的資料值,可降低物理不可克隆功能電路100a的位元誤碼率(BER)。舉例來說,如果第一參考電壓Vref、第二參考電壓Vref_H及第三參考電壓Vref_L之間的差異(即,餘裕)被設置成寬的,則物理不可克隆功能電路100a可達到零位元誤碼率。In addition, in order to eliminate the unstable physical unclonable functional unit and select a stable physical unclonable functional unit (or a valid data value), the physical unclonable function circuit 100a may generate the second reference voltage Vref_H and the third reference voltage Vref_L, and based on The second reference voltage Vref_H and the third reference voltage Vref_L set a dead zone. The physical unclonable function circuit 100a can be reduced by culling potentially unstable physical unclonable functional units that may produce unstable data values and by using data values of strong physical unclonable functional units with sufficient margin Bit error rate (BER). For example, if the difference (ie, margin) between the first reference voltage Vref, the second reference voltage Vref_H, and the third reference voltage Vref_L is set to be wide, the physical unclonable function circuit 100a can reach a zero bit error. Code rate.

當物理不可克隆功能電路具有高位元誤碼率時,需要使用複雜的錯誤檢查及修正(error checking and correction,ECC)邏輯來執行錯誤檢查及修正,且需要比認證密鑰實際所需的位元的數目多的物理不可克隆功能單元。因此,物理不可克隆功能電路(或者其中安裝有物理不可克隆功能電路的系統)具有大的面積及更高的功耗。When the physical unclonable function circuit has a high bit error rate, it is necessary to use complex error checking and correction (ECC) logic to perform error checking and correction, and requires bits that are actually required than the authentication key. The number of physical unclonable functional units. Therefore, the physical unclonable function circuit (or the system in which the physical unclonable function circuit is installed) has a large area and a higher power consumption.

然而,根據本發明概念的示例性實施例,通過基於第二參考電壓Vref_H及第三參考電壓Vref_L來設置死區以及通過剔除具有處於死區中的輸出電壓的不穩定的物理不可克隆功能單元,位元誤碼率可得到降低從而省略錯誤檢查及修正邏輯或者可使用簡單的錯誤檢查及修正邏輯。因此,包括物理不可克隆功能電路100a的物理不可克隆功能系統(例如,圖1所示物理不可克隆功能系統1000)的面積可得到減小且功耗也可得到降低。另外,不需要通過修改例如電源電壓VDD的電壓電位或溫度等各種條件來對物理不可克隆功能單元進行測試以確定不穩定的物理不可克隆功能單元,且因此,測試流程可得到簡化。因此,測試時間段可得到縮短且測試成本可得到降低。However, according to an exemplary embodiment of the inventive concept, by setting a dead zone based on the second reference voltage Vref_H and the third reference voltage Vref_L and by culling an unstable physical unclonable functional unit having an output voltage in a dead zone, The bit error rate can be reduced to omit error checking and correction logic or simple error checking and correction logic can be used. Therefore, the area of the physical unclonable function system including the physical unclonable function circuit 100a (for example, the physical unclonable function system 1000 shown in FIG. 1) can be reduced and power consumption can be reduced. In addition, it is not necessary to test the physical unclonable functional unit by modifying various conditions such as the voltage potential or temperature of the power supply voltage VDD to determine an unstable physical unclonable functional unit, and thus, the test flow can be simplified. Therefore, the test period can be shortened and the test cost can be reduced.

圖4A至圖4C示出根據示例性實施例的有效性確定方法。圖2所示組合邏輯140可確定多個物理不可克隆功能單元的有效性或者所述多個物理不可克隆功能單元的資料值的有效性,並基於有效性確定方法產生有效性信號。4A through 4C illustrate a method of determining validity according to an exemplary embodiment. The combinational logic 140 shown in FIG. 2 may determine the validity of a plurality of physical unclonable functional units or the validity of data values of the plurality of physical unclonable functional units, and generate a validity signal based on the validity determination method.

參照圖4A,多個物理不可克隆功能單元的輸出電壓的分佈可被劃分成第一區域AR1至第四區域AR4。第一區域AR1是比第三參考電壓Vref_L小的電壓範圍。第二區域AR2是等於或高於第三參考電壓Vref_L並小於第一參考電壓Vref的電壓範圍。第三區域AR3是等於或高於第一參考電壓Vref並小於第二參考電壓Vref_H的電壓範圍。第四區域AR4是等於或高於第二參考電壓Vref_H的電壓範圍。Referring to FIG. 4A, the distribution of the output voltages of the plurality of physical unclonable functional units may be divided into first to fourth regions AR1 to AR4. The first region AR1 is a voltage range smaller than the third reference voltage Vref_L. The second region AR2 is a voltage range equal to or higher than the third reference voltage Vref_L and smaller than the first reference voltage Vref. The third region AR3 is a voltage range equal to or higher than the first reference voltage Vref and smaller than the second reference voltage Vref_H. The fourth area AR4 is a voltage range equal to or higher than the second reference voltage Vref_H.

組合邏輯140可對第一比較結果RST1、第二比較結果RST2及第三比較結果RST3執行邏輯運算以產生關於物理不可克隆功能單元的有效性信號VS。此處,第一比較結果RST1、第二比較結果RST2及第三比較結果RST3是將物理不可克隆功能單元的輸出電壓與第一參考電壓Vref、第二參考電壓Vref_H及第三參考電壓Vref_L中的每一者進行比較的結果。第一比較結果RST1可指示物理不可克隆功能單元的資料值。The combinational logic 140 may perform a logical operation on the first comparison result RST1, the second comparison result RST2, and the third comparison result RST3 to generate a validity signal VS regarding the physical unclonable functional unit. Here, the first comparison result RST1, the second comparison result RST2, and the third comparison result RST3 are the output voltages of the physical unclonable functional unit and the first reference voltage Vref, the second reference voltage Vref_H, and the third reference voltage Vref_L. The result of each comparison. The first comparison result RST1 may indicate the data value of the physical unclonable functional unit.

具有處於第一區域AR1中的輸出電壓的物理不可克隆功能單元的第一比較結果RST1、第二比較結果RST2及第三比較結果RST3可全部為′0′。具有處於第二區域AR2中的輸出電壓的物理不可克隆功能單元的第一比較結果RST1及第二比較結果RST2可為′0′,且所述物理不可克隆功能單元的第三比較結果RST3可為′1′。具有處於第三區域AR3中的輸出電壓的物理不可克隆功能單元的第一比較結果RST1及第三比較結果RST3可為′1′,且所述物理不可克隆功能單元的第二比較結果RST2可為′0′。具有處於第四區域AR4中的輸出電壓的物理不可克隆功能單元的第一比較結果RST1、第二比較結果RST2及第三比較結果RST3可全部為′1′。The first comparison result RST1, the second comparison result RST2, and the third comparison result RST3 of the physical unclonable functional unit having the output voltage in the first area AR1 may all be '0'. The first comparison result RST1 and the second comparison result RST2 of the physical unclonable functional unit having the output voltage in the second area AR2 may be '0', and the third comparison result RST3 of the physical unclonable functional unit may be '1'. The first comparison result RST1 and the third comparison result RST3 of the physical unclonable functional unit having the output voltage in the third area AR3 may be '1', and the second comparison result RST2 of the physical unclonable functional unit may be '0'. The first comparison result RST1, the second comparison result RST2, and the third comparison result RST3 of the physical unclonable functional unit having the output voltage in the fourth region AR4 may all be '1'.

根據對第一比較結果RST1、第二比較結果RST2及第三比較結果RST3執行的邏輯運算,具有處於第一區域AR1或第四區域AR4中的輸出電壓的物理不可克隆功能單元的有效性信號VS可被產生為′1′,且具有處於第二區域AR2或第三區域AR3中的輸出電壓的物理不可克隆功能單元的有效性信號VS可被產生為′0′。因此,具有處於第一區域AR1或第四區域AR4中的輸出電壓的物理不可克隆功能單元可被確定為有效的(或穩定的)。具有處於第一區域AR1中的輸出電壓的物理不可克隆功能單元可具有資料值強′0′(strong ′0′),且具有處於第四區域AR4中的輸出電壓的物理不可克隆功能單元可具有資料值強′1′。A validity signal VS of a physical unclonable functional unit having an output voltage in the first region AR1 or the fourth region AR4 according to a logical operation performed on the first comparison result RST1, the second comparison result RST2, and the third comparison result RST3 The validity signal VS of the physical unclonable functional unit that can be generated as '1' and has an output voltage in the second region AR2 or the third region AR3 can be generated as '0'. Therefore, the physical unclonable functional unit having the output voltage in the first area AR1 or the fourth area AR4 can be determined to be valid (or stable). The physical unclonable functional unit having the output voltage in the first area AR1 may have a material value of '0' (strong '0'), and the physical unclonable functional unit having the output voltage in the fourth area AR4 may have The data value is strong '1'.

舉例來說,當產生關於第一物理不可克隆功能單元至第四物理不可克隆功能單元的物理不可克隆功能資料PDT及有效性資料VDT、且第一物理不可克隆功能單元至第四物理不可克隆功能單元分別處於第一區域AR1至第四區域AR4中時,有效性資料VDT可被產生為′1001′,且物理不可克隆功能資料PDT可被產生為′0011′。由於第一物理不可克隆功能單元至第四物理不可克隆功能單元可基於有效性資料VDT被確定為有效的,因此在產生認證密鑰時可使用物理不可克隆功能資料PDT中的第一物理不可克隆功能單元及第四物理不可克隆功能單元的物理不可克隆功能資料值′01′。For example, when the physical unclonable functional data PDT and the validity data VDT for the first physical unclonable functional unit to the fourth physical unclonable functional unit are generated, and the first physical unclonable functional unit to the fourth physical unclonable function When the cells are in the first region AR1 to the fourth region AR4, respectively, the validity data VDT can be generated as '1001', and the physical unclonable function data PDT can be generated as '0011'. Since the first physical unclonable functional unit to the fourth physical unclonable functional unit can be determined to be valid based on the validity data VDT, the first physical unclonable in the physical unclonable functional data PDT can be used when generating the authentication key The physical unclonable function data value '01' of the functional unit and the fourth physical unclonable functional unit.

參照圖4B,組合邏輯140可對物理不可克隆功能單元的第二比較結果RST2及第三比較結果RST3執行邏輯運算以產生關於物理不可克隆功能單元的有效性信號VS。因此,具有處於第一區域AR1或第四區域AR4中的輸出電壓的物理不可克隆功能單元的有效性信號VS可被產生為′1′,且具有處於第二區域AR2或第三區域AR3中的輸出電壓的物理不可克隆功能單元的有效性信號VS可被產生為′0′。Referring to FIG. 4B, the combinational logic 140 may perform a logical operation on the second comparison result RST2 and the third comparison result RST3 of the physical unclonable functional unit to generate a validity signal VS regarding the physical unclonable functional unit. Therefore, the validity signal VS of the physical unclonable functional unit having the output voltage in the first area AR1 or the fourth area AR4 can be generated as '1' and having the second area AR2 or the third area AR3 The validity signal VS of the physical unclonable functional unit of the output voltage can be generated as '0'.

參照圖4C,組合邏輯140可對物理不可克隆功能單元的第一比較結果RST1與第二比較結果RST2及第三比較結果RST3中的一者執行邏輯運算以產生關於物理不可克隆功能單元的有效性信號VS。舉例來說,當第一比較結果RST1是′0′時,組合邏輯140可對第一比較結果RST1及第三比較結果RST3執行互斥或非(exclusive NOR)運算以產生有效性信號VS。當第一比較結果RST1是′1′時,組合邏輯140可對第一比較結果RST1及第二比較結果RST2執行互斥或非運算以產生有效性信號VS。因此,具有處於第一區域AR1或第四區域AR4中的輸出電壓的物理不可克隆功能單元的有效性信號VS可被產生為′1′,且具有處於第二區域AR2或第三區域AR3中的輸出電壓的物理不可克隆功能單元的有效性信號VS可被產生為′0′。Referring to FIG. 4C, the combinational logic 140 may perform a logical operation on one of the first comparison result RST1 and the second comparison result RST2 and the third comparison result RST3 of the physical unclonable functional unit to generate validity regarding the physical unclonable functional unit. Signal VS. For example, when the first comparison result RST1 is '0', the combination logic 140 may perform an exclusive NOR operation on the first comparison result RST1 and the third comparison result RST3 to generate the validity signal VS. When the first comparison result RST1 is '1', the combinational logic 140 may perform a mutually exclusive or non-operation on the first comparison result RST1 and the second comparison result RST2 to generate the validity signal VS. Therefore, the validity signal VS of the physical unclonable functional unit having the output voltage in the first area AR1 or the fourth area AR4 can be generated as '1' and having the second area AR2 or the third area AR3 The validity signal VS of the physical unclonable functional unit of the output voltage can be generated as '0'.

組合邏輯140可根據以上參照圖4A至圖4C闡述的示例性實施例來確定多個物理不可克隆功能單元的有效性。然而,這些僅為示例性實施例,且可對有效性確定方法進行修改。Combinational logic 140 may determine the validity of a plurality of physical unclonable functional units in accordance with the exemplary embodiments set forth above with respect to Figures 4A-4C. However, these are merely exemplary embodiments, and the method of determining the validity may be modified.

圖5示出根據本發明概念示例性實施例的比較電路130a的實例。比較電路130a可應用於圖2所示物理不可克隆功能電路100a作為比較電路。FIG. 5 illustrates an example of a comparison circuit 130a according to an exemplary embodiment of the inventive concept. The comparison circuit 130a can be applied to the physical unclonable function circuit 100a shown in FIG. 2 as a comparison circuit.

參照圖5,比較電路130a可包括比較器131a及開關電路132a。開關電路132a可包括第一參考開關至第三參考開關RSW1、RSW2及RSW3。第一參考開關至第三參考開關RSW1、RSW2及RSW3中的每一者的第一端可連接到比較器131a的第一端。第一參考開關至第三參考開關RSW1、RSW2及RSW3的第二端可分別連接到第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L。Referring to FIG. 5, the comparison circuit 130a may include a comparator 131a and a switch circuit 132a. The switch circuit 132a may include first to third reference switches RSW1, RSW2, and RSW3. A first end of each of the first to third reference switches RSW1, RSW2, and RSW3 may be coupled to the first end of the comparator 131a. The second ends of the first to third reference switches RSW1, RSW2, and RSW3 may be connected to the first to third reference voltages Vref, Vref_H, and Vref_L, respectively.

第一參考開關至第三參考開關RSW1、RSW2及RSW3中的一者可回應於參考選擇信號RSEL而接通,且第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L中的一者可被提供到比較器131a的第一端。參考選擇信號RSEL可從例如圖1所示控制器200的控制邏輯210提供。One of the first to third reference switches RSW1, RSW2, and RSW3 may be turned on in response to the reference selection signal RSEL, and one of the first to third reference voltages Vref, Vref_H, and Vref_L may be A first end is provided to the comparator 131a. The reference selection signal RSEL can be provided, for example, from the control logic 210 of the controller 200 shown in FIG.

比較器131a可接收物理不可克隆功能單元的輸出電壓Vcell及開關電路132a的輸出,並對物理不可克隆功能單元的輸出電壓Vcell與開關電路132a的輸出進行比較以輸出比較結果。比較器131a可根據對物理不可克隆功能單元的輸出電壓Vcell與第一參考電壓Vref、第二參考電壓Vref_H及第三參考電壓Vref_L進行的比較來向組合邏輯140提供第一比較結果、第二比較結果及第三比較結果。The comparator 131a can receive the output voltage Vcell of the physical unclonable functional unit and the output of the switch circuit 132a, and compare the output voltage Vcell of the physical unclonable functional unit with the output of the switch circuit 132a to output a comparison result. The comparator 131a may provide the first comparison result and the second comparison result to the combination logic 140 according to the comparison between the output voltage Vcell of the physical unclonable functional unit and the first reference voltage Vref, the second reference voltage Vref_H, and the third reference voltage Vref_L. And the third comparison result.

在示例性實施例中,在產生有效性資料時,第一參考開關至第三參考開關RSW1、RSW2及RSW3可回應於參考選擇信號RSEL依序接通,且因此,第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L可被依序提供到比較器131a。比較器131a可將第一比較結果至第三比較結果依序提供到組合邏輯140。在產生認證密鑰KEY時(即,在產生物理不可克隆功能資料時),第一參考開關RSW1可回應於參考選擇信號REL而接通以將第一參考電壓Vref提供到比較器131a,且比較器131a可將第一比較結果提供到組合邏輯140。In an exemplary embodiment, when the validity data is generated, the first to third reference switches RSW1, RSW2, and RSW3 may be sequentially turned on in response to the reference selection signal RSEL, and thus, the first reference voltage to the third The reference voltages Vref, Vref_H, and Vref_L may be sequentially supplied to the comparator 131a. The comparator 131a may sequentially provide the first comparison result to the third comparison result to the combinational logic 140. When the authentication key KEY is generated (ie, when the physical unclonable function data is generated), the first reference switch RSW1 may be turned on in response to the reference selection signal REL to provide the first reference voltage Vref to the comparator 131a, and compared The 131a may provide the first comparison result to the combinational logic 140.

在另一個示例性實施例中,在產生有效性資料時,第二參考開關RSW2及第三參考開關RSW3可回應於參考選擇信號而交替地接通,且因此,第二參考電壓Vref_H與第三參考電壓Vref_L可被交替地提供到比較器131a。比較器131a可將第一比較結果至第三比較結果交替地提供到組合邏輯140。在產生密鑰KEY時(即,在產生物理不可克隆功能資料時),第一參考開關RSW1可回應於參考選擇信號REL而接通以將第一參考電壓Vref提供到比較器131a,且比較器131a可將第一比較結果提供到組合邏輯140。In another exemplary embodiment, when the validity data is generated, the second reference switch RSW2 and the third reference switch RSW3 may be alternately turned on in response to the reference selection signal, and thus, the second reference voltage Vref_H and the third The reference voltage Vref_L may be alternately supplied to the comparator 131a. The comparator 131a may alternately provide the first comparison result to the third comparison result to the combinational logic 140. When the key KEY is generated (ie, when the physical unclonable function data is generated), the first reference switch RSW1 may be turned on in response to the reference selection signal REL to provide the first reference voltage Vref to the comparator 131a, and the comparator 131a may provide the first comparison result to combinational logic 140.

圖6示出根據本發明概念示例性實施例的比較電路130b的實例。比較電路130b可應用於圖2所示物理不可克隆功能電路100a作為比較電路。FIG. 6 illustrates an example of a comparison circuit 130b according to an exemplary embodiment of the inventive concept. The comparison circuit 130b can be applied to the physical unclonable function circuit 100a shown in FIG. 2 as a comparison circuit.

圖6所示比較電路130b的配置及操作與圖5所示比較電路130a的配置及操作相似。然而,圖6所示比較電路130b還可包括參考選擇器133b。The configuration and operation of the comparison circuit 130b shown in FIG. 6 are similar to the configuration and operation of the comparison circuit 130a shown in FIG. However, the comparison circuit 130b shown in FIG. 6 may further include a reference selector 133b.

參考選擇器133b可產生用於控制第一參考開關至第三參考開關RSW1、RSW2及RSW3的接通及斷開的參考選擇信號RSEL。開關電路132b可包括第一參考開關至第三參考開關RSW1、RSW2及RSW3。在示例性實施例中,參考選擇器133b可反應於模式信號MD產生參考選擇信號RSEL。舉例來說,模式信號MD可指示有效性資料產生模式或物理不可克隆功能資料產生模式,且可由圖1所示控制器200的控制邏輯210提供。The reference selector 133b may generate a reference selection signal RSEL for controlling the on and off of the first to third reference switches RSW1, RSW2, and RSW3. The switch circuit 132b may include first to third reference switches RSW1, RSW2, and RSW3. In an exemplary embodiment, the reference selector 133b may generate a reference selection signal RSEL in response to the mode signal MD. For example, the mode signal MD may indicate a validity data generation mode or a physical unclonable function data generation mode, and may be provided by the control logic 210 of the controller 200 shown in FIG.

當模式信號MD指示有效性資料產生模式時,參考選擇器133b可產生用於依序接通第一參考開關至第三參考開關RSW1、RSW2及RSW3或用於交替地接通第二參考開關RSW2與第三參考開關RSW3的參考選擇信號RSEL。另外,當模式信號MD指示物理不可克隆功能資料產生模式時,參考選擇器133b可產生用於接通第一參考開關RSW1的參考選擇信號RSEL。When the mode signal MD indicates the validity data generation mode, the reference selector 133b may generate for sequentially turning on the first to third reference switches RSW1, RSW2, and RSW3 or for alternately turning on the second reference switch RSW2. A reference selection signal RSEL with the third reference switch RSW3. In addition, when the mode signal MD indicates the physical unclonable function data generation mode, the reference selector 133b may generate the reference selection signal RSEL for turning on the first reference switch RSW1.

在示例性實施例中,當模式信號MD指示有效性資料產生模式時,參考選擇器133b可基於比較器131b的輸出產生參考選擇信號RSEL。參考選擇器133b可產生用於接通第一參考開關RSW1的參考選擇信號RSEL,且接著基於比較器131b的輸出(例如,第一比較結果)產生用於接通第二參考開關RSW2及第三參考開關RSW3中的一者的參考選擇信號RSEL。舉例來說,當第一比較結果是′1′時,第三參考開關RSW3可接通,且當第一比較結果是′0′時,第二參考開關RSW2可接通。因此,當第一比較結果是′1′時,比較器131b可向組合邏輯140提供第一比較結果及第三比較結果,且當第一比較結果是′0′時,比較器131b可向組合邏輯140提供第一比較結果及第二比較結果。In an exemplary embodiment, when the mode signal MD indicates the validity data generation mode, the reference selector 133b may generate the reference selection signal RSEL based on the output of the comparator 131b. The reference selector 133b may generate a reference selection signal RSEL for turning on the first reference switch RSW1, and then generate for turning on the second reference switch RSW2 and the third based on the output of the comparator 131b (eg, the first comparison result) The reference selection signal RSEL of one of the switches RSW3 is referenced. For example, when the first comparison result is '1', the third reference switch RSW3 can be turned on, and when the first comparison result is '0', the second reference switch RSW2 can be turned on. Therefore, when the first comparison result is '1', the comparator 131b can provide the first comparison result and the third comparison result to the combination logic 140, and when the first comparison result is '0', the comparator 131b can be combined Logic 140 provides a first comparison result and a second comparison result.

組合邏輯140可基於接收到的第一比較結果及第二比較結果或基於接收到的第一比較結果及第三比較結果、利用參照圖4C闡述的有效性確定方法來確定物理不可克隆功能單元的有效性。The combination logic 140 may determine the physical unclonable functional unit based on the received first comparison result and the second comparison result or based on the received first comparison result and the third comparison result, using the validity determination method described with reference to FIG. 4C Effectiveness.

圖7是根據本發明概念示例性實施例的參考電壓產生器120a的實例。參考電壓產生器120a是參照圖2闡述的參考電壓產生器120的實例。因此,圖2所示參考電壓產生器120的說明可應用於所述示例性實施例的參考電壓產生器120a。FIG. 7 is an example of a reference voltage generator 120a according to an exemplary embodiment of the inventive concept. The reference voltage generator 120a is an example of the reference voltage generator 120 explained with reference to FIG. Accordingly, the description of the reference voltage generator 120 shown in FIG. 2 can be applied to the reference voltage generator 120a of the exemplary embodiment.

參照圖7,參考電壓產生器120a可包括第三電阻元件RE3a、第四電阻元件RE4a、第一選擇器121及第二選擇器122。Referring to FIG. 7, the reference voltage generator 120a may include a third resistance element RE3a, a fourth resistance element RE4a, a first selector 121, and a second selector 122.

第三電阻元件RE3a及第四電阻元件RE4a可分別由包括多個電阻器的電阻器串形成。第三電阻元件RE3a及第四電阻元件RE4a可對電源電壓VDD進行分壓並輸出經分壓電壓。The third resistance element RE3a and the fourth resistance element RE4a may be formed of a resistor string including a plurality of resistors, respectively. The third resistance element RE3a and the fourth resistance element RE4a may divide the power supply voltage VDD and output a divided voltage.

位於第三電阻元件RE3a與第四電阻元件RE4a之間的連接節點CNR的電壓可作為第一參考電壓Vref被輸出。第三電阻元件RE3a的電阻值與第四電阻元件RE4a的電阻值(例如,目標電阻值)可相同,且第一參考電壓Vref可相似於電源電壓VDD的一半。The voltage of the connection node CNR between the third resistance element RE3a and the fourth resistance element RE4a can be output as the first reference voltage Vref. The resistance value of the third resistance element RE3a may be the same as the resistance value (eg, the target resistance value) of the fourth resistance element RE4a, and the first reference voltage Vref may be similar to half of the power supply voltage VDD.

同時,多個經分壓電壓可從第三電阻元件RE3a(即,電阻器串的多個節點N1_1至N1_m)輸出,且第一選擇器121可基於第一設置信號SET1選擇所述多個經分壓電壓中的一者作為第二參考電壓Vref_H。Meanwhile, a plurality of divided voltages may be output from the third resistive element RE3a (ie, the plurality of nodes N1_1 to N1_m of the resistor string), and the first selector 121 may select the plurality of vias based on the first set signal SET1 One of the divided voltages is used as the second reference voltage Vref_H.

多個經分壓電壓可從第四電阻元件RE4a(即,電阻器串的多個節點N2_1至N2_m)輸出,且第二選擇器122可基於第二設置信號SET2選擇所述多個經分壓電壓中的一者作為第三參考電壓Vref_L。A plurality of divided voltages may be output from the fourth resistive element RE4a (ie, a plurality of nodes N2_1 to N2_m of the resistor string), and the second selector 122 may select the plurality of divided voltages based on the second set signal SET2 One of the voltages is used as the third reference voltage Vref_L.

第一設置信號SET1及第二設置信號SET2可從圖1所示控制器200提供,且可有所變化。第一設置信號SET1及第二設置信號SET2可通過考慮到第一參考電壓Vref的分佈、一個或多個比較器(例如,圖2所示第一比較器至第三比較器131、132及133、圖5所示比較器131a、以及圖6所示比較器131b中的每一者)的偏移以及雜訊來進行設置。舉例來說,當第一參考電壓Vref的分佈變大時,第一設置信號SET1可被設置成使得選擇具有相對高的電位的經分壓電壓,且第二設置信號SET2可被設置成使得選擇具有相對低的電位的經分壓電壓。The first setting signal SET1 and the second setting signal SET2 may be provided from the controller 200 shown in FIG. 1, and may vary. The first setting signal SET1 and the second setting signal SET2 may pass through one or more comparators considering the distribution of the first reference voltage Vref (for example, the first to third comparators 131, 132, and 133 shown in FIG. 2) The offset of the comparator 131a shown in FIG. 5 and each of the comparators 131b shown in FIG. 6 and the noise are set. For example, when the distribution of the first reference voltage Vref becomes large, the first setting signal SET1 may be set such that a divided voltage having a relatively high potential is selected, and the second setting signal SET2 may be set such that selection A divided voltage having a relatively low potential.

圖8是根據本發明概念示例性實施例的參考電壓產生器120b的實例。參考電壓產生器120b是參照圖2闡述的參考電壓產生器120的實例。因此,圖2所示參考電壓產生器120的說明可應用於示例性實施例的參考電壓產生器120b。FIG. 8 is an example of a reference voltage generator 120b according to an exemplary embodiment of the inventive concept. The reference voltage generator 120b is an example of the reference voltage generator 120 explained with reference to FIG. Accordingly, the description of the reference voltage generator 120 shown in FIG. 2 can be applied to the reference voltage generator 120b of the exemplary embodiment.

參照圖8,參考電壓產生器120b可包括帶隙參考電路BGR、第三電阻元件RE3b及第四電阻元件RE4b。Referring to FIG. 8, the reference voltage generator 120b may include a bandgap reference circuit BGR, a third resistive element RE3b, and a fourth resistive element RE4b.

帶隙參考電路BGR可輸出具有恒定電位的參考電流Iref,而不論溫度、電壓等如何改變。參考電流Iref可流經第三電阻元件RE3b及第四電阻元件RE4b,且參考電流Iref的量可被設置成使得第三電阻元件RE3b的第一端ND1處於電源電壓VDD的電位。第三電阻元件RE3b及第四電阻元件RE4b、以及第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L的產生相同於參照圖2及圖7所闡述,且因此將省略重複的說明。The bandgap reference circuit BGR can output a reference current Iref having a constant potential regardless of changes in temperature, voltage, and the like. The reference current Iref may flow through the third resistive element RE3b and the fourth resistive element RE4b, and the amount of the reference current Iref may be set such that the first end ND1 of the third resistive element RE3b is at the potential of the power supply voltage VDD. The generation of the third resistance element RE3b and the fourth resistance element RE4b, and the first to third reference voltages Vref, Vref_H, and Vref_L are the same as explained with reference to FIGS. 2 and 7, and thus the repeated description will be omitted.

圖9是根據本發明概念示例性實施例的物理不可克隆功能電路100b的電路圖。FIG. 9 is a circuit diagram of a physical unclonable function circuit 100b according to an exemplary embodiment of the inventive concept.

圖9所示物理不可克隆功能電路100b可包括物理不可克隆功能單元陣列110、參考電壓產生器120及調節器(regulator)160。儘管圖中未示出,然而物理不可克隆功能電路100b還可包括參照圖2闡述的物理不可克隆功能電路100a的其他配置。The physical unclonable function circuit 100b shown in FIG. 9 may include a physical unclonable functional unit array 110, a reference voltage generator 120, and a regulator 160. Although not shown in the drawings, the physical unclonable function circuit 100b may further include other configurations of the physical unclonable function circuit 100a explained with reference to FIG. 2.

物理不可克隆功能電路100b的配置及操作與圖2所示物理不可克隆功能電路100a的配置及操作相同。然而,物理不可克隆功能電路100b還可包括調節器160,並通過調節器160接收電源電壓VDD。The configuration and operation of the physical unclonable function circuit 100b are the same as those of the physical unclonable function circuit 100a shown in FIG. 2. However, the physical unclonable function circuit 100b may further include a regulator 160 and receive the power supply voltage VDD through the regulator 160.

調節器160可基於從外部接收的外部電源電壓VDDE來產生將被提供到物理不可克隆功能單元陣列110及參考電壓產生器120的電源電壓VDD。調節器160可產生具有恒定電位的電源電壓VDD而不論外部電源電壓VDDE的電位如何改變。物理不可克隆功能單元陣列110的多個物理不可克隆功能單元CL1至CLn以及參考電壓產生器120可分別產生具有恒定電位的輸出電壓以及第一參考電壓至第三參考電壓Vref、Vref_H及Vref_L,而不論外部電源電壓VDDE如何改變。因此,所述多個物理不可克隆功能單元CL1至CLn的資料值可維持為均勻的。The regulator 160 may generate a power supply voltage VDD to be supplied to the physical unclonable functional unit array 110 and the reference voltage generator 120 based on the external power supply voltage VDDE received from the outside. The regulator 160 can generate the power supply voltage VDD having a constant potential regardless of the potential of the external power supply voltage VDDE. The plurality of physical unclonable functional units CL1 to CLn of the physical unclonable functional unit array 110 and the reference voltage generator 120 may respectively generate an output voltage having a constant potential and first to third reference voltages Vref, Vref_H, and Vref_L, and No matter how the external power supply voltage VDDE changes. Therefore, the data values of the plurality of physical unclonable functional units CL1 to CLn can be maintained to be uniform.

圖10是根據本發明概念示例性實施例的物理不可克隆功能電路100c的電路圖。FIG. 10 is a circuit diagram of a physical unclonable function circuit 100c according to an exemplary embodiment of the inventive concept.

圖10所示物理不可克隆功能電路100c可包括物理不可克隆功能單元陣列110、參考電壓產生器120、保護電路170及區塊開關180。儘管圖中未示出,然而物理不可克隆功能電路100b還可包括參照圖2闡述的物理不可克隆功能電路100a的其他配置。The physical unclonable function circuit 100c shown in FIG. 10 may include a physical unclonable functional unit array 110, a reference voltage generator 120, a protection circuit 170, and a block switch 180. Although not shown in the drawings, the physical unclonable function circuit 100b may further include other configurations of the physical unclonable function circuit 100a explained with reference to FIG. 2.

保護電路170可防止在電源電壓VDD處於額定電壓範圍之外時產生物理不可克隆功能資料。舉例來說,如果電源電壓VDD等於或小於第一閾值電壓、或者如果電源電壓VDD等於或高於第二閾值電壓,則保護電路170可產生禁能信號ENB。第一閾值電壓及第二閾值電壓可為預設的。The protection circuit 170 prevents physical unclonable function data from being generated when the power supply voltage VDD is outside the rated voltage range. For example, if the power supply voltage VDD is equal to or less than the first threshold voltage, or if the power supply voltage VDD is equal to or higher than the second threshold voltage, the protection circuit 170 may generate the disable signal ENB. The first threshold voltage and the second threshold voltage may be preset.

區塊開關180可回應於禁能信號ENB而斷開,以防止電源電壓VDD供應到物理不可克隆功能單元陣列110及參考電壓產生器120。The block switch 180 can be turned off in response to the disable signal ENB to prevent the power supply voltage VDD from being supplied to the physical unclonable functional unit array 110 and the reference voltage generator 120.

然而,區塊開關180並非僅限於此,且可連接到物理不可克隆功能單元陣列110或參考電壓產生器120以防止電源電壓VDD供應到物理不可克隆功能單元陣列110或參考電壓產生器120。However, the block switch 180 is not limited thereto and may be connected to the physical unclonable functional unit array 110 or the reference voltage generator 120 to prevent the power supply voltage VDD from being supplied to the physical unclonable functional unit array 110 or the reference voltage generator 120.

圖11是根據本發明概念示例性實施例的物理不可克隆功能系統1000a的方塊圖。FIG. 11 is a block diagram of a physical unclonable function system 1000a according to an exemplary embodiment of the inventive concept.

參照圖11,物理不可克隆功能系統1000a可包括物理不可克隆功能電路100、控制器200a及非揮發性記憶體300。物理不可克隆功能電路100可包括物理不可克隆功能單元陣列110及參考電壓產生器120,且控制器200a可包括控制邏輯210、密鑰產生器220及錯誤檢查及修正電路230。Referring to FIG. 11, the physical unclonable function system 1000a may include a physical unclonable function circuit 100, a controller 200a, and a non-volatile memory 300. The physical unclonable function circuit 100 can include a physical unclonable functional unit array 110 and a reference voltage generator 120, and the controller 200a can include control logic 210, a key generator 220, and an error checking and correction circuit 230.

與圖1所示物理不可克隆功能系統1000相比,物理不可克隆功能系統1000a還可包括錯誤檢查及修正電路230。當產生初始認證密鑰KEY時(即,當註冊認證密鑰時),錯誤檢查及修正電路230可對物理不可克隆功能資料PDT進行編碼以產生用於錯誤修正的錯誤檢查及修正碼,且可將所述錯誤檢查及修正碼儲存在非揮發性記憶體300中。密鑰產生器220可基於經編碼的物理不可克隆功能資料PDT產生認證密鑰KEY。The physical unclonable functional system 1000a may also include an error checking and correction circuit 230 as compared to the physical unclonable functional system 1000 shown in FIG. When the initial authentication key KEY is generated (ie, when the authentication key is registered), the error checking and correction circuit 230 may encode the physical unclonable function data PDT to generate an error check and correction code for error correction, and may The error check and correction code is stored in the non-volatile memory 300. Key generator 220 may generate an authentication key KEY based on the encoded physical unclonable functional material PDT.

此後當產生認證密鑰KEY時,錯誤檢查及修正電路230可從非揮發性記憶體300讀取錯誤檢查及修正碼,並基於所讀取的錯誤檢查及修正碼對由物理不可克隆功能電路100提供的物理不可克隆功能資料PDT進行解碼。密鑰產生器220可基於經解碼的物理不可克隆功能資料PDT產生認證密鑰KEY。Thereafter, when the authentication key KEY is generated, the error checking and correction circuit 230 can read the error check and correction code from the non-volatile memory 300, and based on the read error check and correction code pair by the physical unclonable function circuit 100. The provided physical unclonable function data PDT is decoded. The key generator 220 may generate the authentication key KEY based on the decoded physical unclonable function material PDT.

如以上參照圖2所闡述,根據本發明概念示例性實施例的物理不可克隆功能電路100的位元誤碼率可相對低。因此,錯誤檢查及修正電路230可包括簡單的錯誤檢查及修正邏輯。As explained above with reference to FIG. 2, the bit error rate of the physical unclonable function circuit 100 according to an exemplary embodiment of the inventive concept may be relatively low. Thus, error checking and correction circuit 230 can include simple error checking and correction logic.

圖12是根據本發明概念示例性實施例的操作物理不可克隆功能系統的方法的流程圖。圖12所示操作方法可在圖1所示物理不可克隆功能系統1000或圖11所示物理不可克隆功能系統1000a上執行。因此,圖1所示物理不可克隆功能系統1000或圖11所示物理不可克隆功能系統1000a的說明可應用于根據本發明概念示例性實施例的物理不可克隆功能系統的操作方法。FIG. 12 is a flowchart of a method of operating a physical unclonable function system, according to an exemplary embodiment of the inventive concept. The operation method shown in Fig. 12 can be performed on the physical unclonable function system 1000 shown in Fig. 1 or the physical unclonable function system 1000a shown in Fig. 11. Therefore, the description of the physical unclonable function system 1000 shown in FIG. 1 or the physical unclonable function system 1000a shown in FIG. 11 can be applied to the operation method of the physical unclonable function system according to an exemplary embodiment of the inventive concept.

參照圖12,物理不可克隆功能系統可在製造工藝的測試操作或初始化過程中、或者在物理不可克隆功能電路的重定操作中從多個物理不可克隆功能單元中確定穩定的物理不可克隆功能單元(S100)。物理不可克隆功能系統可對所述多個物理不可克隆功能單元進行測試以判斷所述多個物理不可克隆功能單元的輸出電壓是否處於死區中。物理不可克隆功能系統可將具有處於死區中的輸出電壓的物理不可克隆功能單元確定為不穩定的物理不可克隆功能單元(即,無效的物理不可克隆功能單元),並將具有不位於死區中的輸出電壓的物理不可克隆功能單元確定為穩定的物理不可克隆功能單元(即,有效的物理不可克隆功能單元)。物理不可克隆功能系統可產生關於所述多個物理不可克隆功能單元中的每一者的有效性信號,並將包括有效性信號的有效性資料儲存在非揮發性記憶體中。Referring to FIG. 12, the physical unclonable functional system may determine a stable physical unclonable functional unit from a plurality of physical unclonable functional units during a test operation or initialization process of a manufacturing process, or in a re-operation of a physical unclonable functional circuit ( S100). The physical unclonable functional system may test the plurality of physical unclonable functional units to determine whether an output voltage of the plurality of physical unclonable functional units is in a dead zone. The physical unclonable functional system can determine a physical unclonable functional unit having an output voltage in a dead zone as an unstable physical unclonable functional unit (ie, an invalid physical unclonable functional unit) and will have a dead zone not located The physical unclonable functional unit of the output voltage in the medium is determined to be a stable physical unclonable functional unit (ie, a valid physical unclonable functional unit). The physical unclonable functional system can generate a validity signal for each of the plurality of physical unclonable functional units and store the validity data including the validity signal in the non-volatile memory.

此後,物理不可克隆功能系統可回應於認證密鑰請求信號產生認證密鑰,且物理不可克隆功能系統可根據穩定的物理不可克隆功能單元的輸出電壓、基於物理不可克隆功能資料來產生認證密鑰(S200)。物理不可克隆功能系統可基於儲存在非揮發性記憶體中的有效性資料來區分有效的物理不可克隆功能單元與無效的物理不可克隆功能單元,並基於有效的物理不可克隆功能單元的資料值產生認證密鑰。Thereafter, the physical unclonable function system can generate an authentication key in response to the authentication key request signal, and the physical unclonable function system can generate the authentication key based on the output voltage of the stable physical unclonable functional unit based on the physical unclonable functional data. (S200). The physical unclonable functional system can distinguish valid physical unclonable functional units from invalid physical unclonable functional units based on validity data stored in non-volatile memory, and generate data based on valid physical unclonable functional units. Authentication key.

圖13是根據示例性實施例的圖12所示操作S100的流程圖。FIG. 13 is a flowchart of operation S100 shown in FIG. 12, according to an exemplary embodiment.

參照圖13,參考電壓產生器可通過使用電阻元件對電源電壓進行分壓來產生第一參考電壓至第三參考電壓(S110)。第一參考電壓可為用於確定物理不可克隆功能單元的資料值的參考電壓,且第二參考電壓及第三參考電壓可為用於設置死區的參考電壓。第一參考電壓可被設置成電源電壓的一半。第二參考電壓高於第一參考電壓,且第三參考電壓低於第一參考電壓。Referring to FIG. 13, the reference voltage generator may generate a first reference voltage to a third reference voltage by dividing a power supply voltage using a resistance element (S110). The first reference voltage may be a reference voltage for determining a data value of the physical unclonable functional unit, and the second reference voltage and the third reference voltage may be reference voltages for setting a dead zone. The first reference voltage can be set to half of the supply voltage. The second reference voltage is higher than the first reference voltage, and the third reference voltage is lower than the first reference voltage.

所述多個物理不可克隆功能單元中的每一者可通過對電源電壓進行分壓來產生輸出電壓(S120)。操作S120可與操作S110同時執行。所述多個物理不可克隆功能單元中的每一者可包括串聯連接的電阻元件。當電阻元件作為分壓器運行時,它們可通過對電源電壓進行分壓來產生輸出電壓。電阻元件可被設計成具有相同的電阻值,且電阻元件的電阻值可因製造工藝方面的不匹配而具有誤差。所述多個物理不可克隆功能單元的輸出電壓可被設置成相同的。舉例來說,所述多個物理不可克隆功能單元中的每一者的輸出電壓可被設置成電源電壓的一半。然而,由於電阻元件的電阻值的誤差,所述多個物理不可克隆功能單元的輸出電壓可具有分佈。Each of the plurality of physical unclonable functional units may generate an output voltage by dividing a power supply voltage (S120). Operation S120 can be performed simultaneously with operation S110. Each of the plurality of physical unclonable functional units may include a resistive element connected in series. When the resistive elements operate as voltage dividers, they can produce an output voltage by dividing the supply voltage. The resistive elements can be designed to have the same resistance value, and the resistance values of the resistive elements can have errors due to mismatches in manufacturing processes. The output voltages of the plurality of physical unclonable functional units may be set to be the same. For example, the output voltage of each of the plurality of physical unclonable functional units can be set to half of the supply voltage. However, the output voltages of the plurality of physical unclonable functional units may have a distribution due to an error in the resistance value of the resistive element.

比較電路可對從所述多個物理不可克隆功能單元中選擇的物理不可克隆功能單元的輸出電壓與第一參考電壓至第三參考電壓中的至少兩個參考電壓進行比較(S130),且組合邏輯可基於比較結果產生指示所選擇物理不可克隆功能單元的有效性的有效性信號(S140)。舉例來說,比較電路可對所選擇物理不可克隆功能單元的輸出電壓與第一參考電壓至第三參考電壓進行比較以產生第一比較結果至第三比較結果。組合邏輯可基於第一比較結果至第三比較結果產生關於所選擇物理不可克隆功能單元的有效性信號。The comparison circuit may compare an output voltage of the physical unclonable functional unit selected from the plurality of physical unclonable functional units with at least two of the first reference voltage to the third reference voltage (S130), and combine The logic may generate a validity signal indicating the validity of the selected physical unclonable functional unit based on the comparison result (S140). For example, the comparison circuit can compare the output voltage of the selected physical unclonable functional unit with the first reference voltage to the third reference voltage to generate a first comparison result to a third comparison result. The combinational logic may generate a validity signal for the selected physical unclonable functional unit based on the first comparison result to the third comparison result.

此後,可從所述多個物理不可克隆功能單元中選擇另一個物理不可克隆功能單元(S150)。可對所選擇的另一個物理不可克隆功能單元執行操作S130及S140,且組合邏輯可產生關於所選擇的另一個物理不可克隆功能單元的有效性信號。Thereafter, another physical unclonable functional unit may be selected from the plurality of physical unclonable functional units (S150). Operations S130 and S140 may be performed on another selected physical unclonable functional unit, and the combining logic may generate a validity signal regarding the selected other physical unclonable functional unit.

重複執行操作S130、S140及S150,可產生關於所述多個物理不可克隆功能單元中的每一者的有效性信號。Repeating operations S130, S140, and S150 may generate a validity signal for each of the plurality of physical unclonable functional units.

可將包括分別關於所述多個物理不可克隆功能單元的有效性信號的有效性資料儲存在非揮發性記憶體中作為有效性表(validity map)(S160)。The validity data including the validity signals for the plurality of physical unclonable functional units, respectively, may be stored in the non-volatile memory as a validity map (S160).

圖14是根據示例性實施例的圖12所示操作S200的流程圖。FIG. 14 is a flowchart of operation S200 shown in FIG. 12, according to an exemplary embodiment.

參照圖14,參考電壓產生器可通過使用電阻元件對電源電壓進行分壓來產生第一參考電壓(S210)。Referring to FIG. 14, the reference voltage generator may generate a first reference voltage by dividing a power supply voltage using a resistance element (S210).

多個物理不可克隆功能單元可通過對電源電壓進行分壓來分別產生輸出電壓(S220)。操作S220可與操作S210同時執行。A plurality of physical unclonable functional units may respectively generate an output voltage by dividing a power supply voltage (S220). Operation S220 can be performed simultaneously with operation S210.

比較電路與組合邏輯可通過將所述多個物理不可克隆功能單元中的每一者的輸出電壓與第一參考電壓進行比較來產生物理不可克隆功能資料(S230)。比較電路與組合邏輯可將物理不可克隆功能單元的輸出電壓與第一參考電壓進行比較以產生關於物理不可克隆功能單元的資料值,且物理不可克隆功能資料可包括所述多個物理不可克隆功能單元的資料值。物理不可克隆功能資料的每一個位可對應於所述多個物理不可克隆功能單元的資料值。The comparison circuit and the combinational logic may generate the physical unclonable function data by comparing the output voltage of each of the plurality of physical unclonable functional units with the first reference voltage (S230). The comparison circuit and combinational logic can compare the output voltage of the physical unclonable functional unit with the first reference voltage to generate a data value for the physically unclonable functional unit, and the physical unclonable functional data can include the plurality of physical unclonable functions The data value of the unit. Each bit of the physical unclonable functional material may correspond to a data value of the plurality of physical unclonable functional units.

控制器可使用物理不可克隆功能資料的各個位元中的與穩定的物理不可克隆功能單元對應的位元來產生認證密鑰(S240)。控制器可讀取儲存在非揮發性記憶體中的有效性資料,並基於有效性資料從物理不可克隆功能資料中選擇與穩定的物理不可克隆功能單元對應的位元(即,選擇有效資料值)。控制器可基於有效資料值產生認證密鑰。The controller may generate an authentication key using a bit corresponding to the stable physical unclonable functional unit among the respective bits of the physical unclonable function material (S240). The controller can read the validity data stored in the non-volatile memory, and select a bit corresponding to the stable physical unclonable functional unit from the physical unclonable functional data based on the validity data (ie, select a valid data value) ). The controller can generate an authentication key based on the valid data value.

圖15是根據示例性實施例的圖12所示操作S200的流程圖。FIG. 15 is a flowchart of operation S200 shown in FIG. 12, according to an exemplary embodiment.

參照圖15,參考電壓產生器可通過使用電阻元件對電源電壓進行分壓來產生第一參考電壓(S210a)。Referring to FIG. 15, the reference voltage generator may generate a first reference voltage by dividing a power supply voltage using a resistance element (S210a).

多個物理不可克隆功能單元中的每一者可通過對電源電壓進行分壓來產生輸出電壓(S220a)。操作S220a可與操作S210a同時執行。Each of the plurality of physical unclonable functional units may generate an output voltage by dividing a power supply voltage (S220a). Operation S220a may be performed simultaneously with operation S210a.

比較電路與組合邏輯可通過將多個物理不可克隆功能單元中的穩定的物理不可克隆功能單元的輸出電壓進行比較來產生物理不可克隆功能資料(S230a)。控制器可讀取儲存在非揮發性記憶體中的有效性資料,並將用於基於有效性資料選擇穩定的物理不可克隆功能單元(即,有效的物理不可克隆功能單元)的控制信號提供到物理不可克隆功能電路。因此,可將穩定的物理不可克隆功能單元的輸出電壓依序提供到比較電路。比較電路可將穩定的物理不可克隆功能單元的輸出電壓中的每一者與第一參考電壓進行比較以輸出比較結果,且組合邏輯可基於比較結果(即,基於穩定的物理不可克隆功能單元的資料值)產生物理不可克隆功能資料。The comparison circuit and the combinational logic may generate the physical unclonable function data by comparing the output voltages of the stable physical unclonable functional units of the plurality of physical unclonable functional units (S230a). The controller can read the validity data stored in the non-volatile memory and provide a control signal for selecting a stable physical unclonable functional unit (ie, a valid physical unclonable functional unit) based on the validity data to Physical unclonable functional circuits. Therefore, the output voltage of the stable physical unclonable functional unit can be sequentially supplied to the comparison circuit. The comparison circuit can compare each of the output voltages of the stable physical unclonable functional units with the first reference voltage to output a comparison result, and the combinational logic can be based on the comparison result (ie, based on the stable physical unclonable functional unit The data value) produces physical unclonable functional data.

控制器可使用由物理不可克隆功能電路提供的物理不可克隆功能資料的位元產生認證密鑰(S240a)。在示例性實施例中,控制器可輸出物理不可克隆功能資料作為認證密鑰。The controller may generate an authentication key using a bit of the physical unclonable function material provided by the physical unclonable function circuit (S240a). In an exemplary embodiment, the controller may output a physical unclonable functional material as an authentication key.

圖16是示出根據本發明概念示例性實施例的電子裝置2000的方塊圖。FIG. 16 is a block diagram showing an electronic device 2000 according to an exemplary embodiment of the inventive concept.

電子裝置2000可為例如在上面執行資料編碼或安全認證的下列各種類型的電子裝置中的一者:應用處理器、智慧卡積體晶片(integrated chip,IC)、移動裝置、資料儲存媒體(例如,固態驅動器(solid state drive,SSD)、記憶棒(memory stick)或通用快閃儲存(universal flash storage,UFS)裝置)、儲存卡(例如,安全數位(security digital,SD)卡、多媒體卡(multimedia card,MMC)或嵌入式多媒體卡(embedded MMC,eMMC))或安全裝置。The electronic device 2000 can be, for example, one of the following various types of electronic devices that perform data encoding or secure authentication thereon: an application processor, an integrated integrated circuit (IC), a mobile device, a data storage medium (eg, , solid state drive (SSD), memory stick or universal flash storage (UFS) device, memory card (for example, security digital (SD) card, multimedia card ( Multimedia card, MMC) or embedded multimedia card (embedded MMC (eMMC)) or security device.

參照圖16,電子裝置2000可包括至少一個處理器2100、物理不可克隆功能系統2200、編碼模組2300、非揮發性記憶體控制器2400、非揮發性記憶體2410、隨機存取記憶體2500及介面2600。電子裝置2000還可包括其他元件,例如通訊模組或輸入/輸出裝置。在示例性實施例中,如果電子裝置2000是應用處理器,則非揮發性記憶體2410可包括在電子裝置2000的外部。Referring to FIG. 16 , the electronic device 2000 can include at least one processor 2100 , a physical unclonable function system 2200 , an encoding module 2300 , a non-volatile memory controller 2400 , a non-volatile memory 2410 , a random access memory 2500 , and Interface 2600. The electronic device 2000 may also include other components such as a communication module or an input/output device. In an exemplary embodiment, if the electronic device 2000 is an application processor, the non-volatile memory 2410 may be included external to the electronic device 2000.

處理器2100可控制電子裝置2000的總體操作。處理器2100可被實作為中央處理器(central processing unit,CPU)、微處理器等,且可包括單核心處理器或多核心處理器。The processor 2100 can control the overall operation of the electronic device 2000. The processor 2100 can be implemented as a central processing unit (CPU), a microprocessor, etc., and can include a single core processor or a multi-core processor.

隨機存取記憶體2500可作為電子裝置2000的內部系統的工作記憶體運行。隨機存取記憶體2500可包括揮發性記憶體及非揮發性記憶體中的至少一者。在隨機存取記憶體2500上可載入代碼及/或應用來管理或操作電子裝置2000,且處理器2100可執行在隨機存取記憶體2500上載入的代碼及/或應用。代碼及/或應用可儲存在非揮發性記憶體2410或另一個儲存裝置中。The random access memory 2500 can operate as a working memory of an internal system of the electronic device 2000. The random access memory 2500 can include at least one of a volatile memory and a non-volatile memory. Code and/or applications may be loaded on the random access memory 2500 to manage or operate the electronic device 2000, and the processor 2100 may execute code and/or applications loaded on the random access memory 2500. The code and/or application can be stored in non-volatile memory 2410 or another storage device.

介面2600可通過以下方式連接到輸入/輸出裝置(圖中未示出):RGB介面、中央處理器介面、序列介面、移動顯示數位介面(mobile display digital interface,MDDI)、積體電路(inter integrated circuit,I2C)介面、串列外設介面(serial peripheral interface,SPI)、微控制器單元(micro controller unit,MCU)、移動產業處理器介面(mobile industry processor interface,MIPI)、嵌入式顯示埠(embedded display port,eDP)介面、D超小型介面(D-subminiature,D-sub)、光學介面、高清晰度多媒體介面(high definition multimedia interface,HDMI)、移動高清晰度連結(mobile high-definition link,MHL)介面、安全數位卡/多媒體卡(MMC)介面、紅外資料協會(infrared data association,IrDA)標準介面等。The interface 2600 can be connected to an input/output device (not shown) by: RGB interface, central processing unit interface, serial interface, mobile display digital interface (MDDI), integrated circuit (inter integrated) Circuit, I2C) interface, serial peripheral interface (SPI), micro controller unit (MCU), mobile industry processor interface (MIPI), embedded display 埠 ( Embedded display port, eDP) interface, D-subminiature (D-sub), optical interface, high definition multimedia interface (HDMI), mobile high-definition link , MHL) interface, secure digital card / multimedia card (MMC) interface, infrared data association (IrDA) standard interface.

非揮發性記憶體控制器2400可在非揮發性記憶體2410與電子裝置2000的其他元件(例如,處理器2100、物理不可克隆功能系統2200、編碼模組2300等)之間提供介面。將儲存在非揮發性記憶體2410中的資料或將從非揮發性記憶體2410讀取的資料可在非揮發性記憶體控制器2400的控制下由非揮發性記憶體2410接收或從非揮發性記憶體2410讀取。The non-volatile memory controller 2400 can provide an interface between the non-volatile memory 2410 and other components of the electronic device 2000 (eg, the processor 2100, the physical unclonable function system 2200, the encoding module 2300, etc.). The data stored in the non-volatile memory 2410 or the data read from the non-volatile memory 2410 can be received by the non-volatile memory 2410 or non-volatile under the control of the non-volatile memory controller 2400. The memory 2410 is read.

非揮發性記憶體2410可包括以下中的一者:一次可程式設計記憶體、唯讀記憶體、可程式設計唯讀記憶體、電可程式設計唯讀記憶體、電可抹除可程式設計唯讀記憶體、快閃記憶體、相變隨機存取記憶體、磁性隨機存取記憶體、電阻式隨機存取記憶體及鐵電式隨機存取記憶體。The non-volatile memory 2410 can include one of the following: a single programmable memory, a read-only memory, a programmable read-only memory, an electrically programmable read-only memory, and an electrically erasable programmable design. Read-only memory, flash memory, phase change random access memory, magnetic random access memory, resistive random access memory, and ferroelectric random access memory.

用於管理或操作電子裝置2000的代碼及/或應用、以及使用者資料可儲存在非揮發性記憶體2410中。另外,在物理不可克隆功能系統2200中產生的有效性資料可儲存在非揮發性記憶體2410中。Codes and/or applications for managing or operating the electronic device 2000, as well as user data, may be stored in the non-volatile memory 2410. Additionally, the validity data generated in the physical unclonable functional system 2200 can be stored in the non-volatile memory 2410.

編碼模組2300可使用由物理不可克隆功能系統2200提供的認證密鑰對輸入/輸出資料執行編碼及解碼操作。The encoding module 2300 can perform encoding and decoding operations on the input/output data using the authentication key provided by the physical unclonable function system 2200.

物理不可克隆功能系統2200可產生出於安全起見所需的認證密鑰。回應於由處理器2100或編碼模組2300提供的認證密鑰請求信號,物理不可克隆功能系統2200可產生認證密鑰,並將所述認證密鑰提供到編碼模組2300。The physical unclonable function system 2200 can generate an authentication key required for security reasons. In response to the authentication key request signal provided by the processor 2100 or the encoding module 2300, the physical unclonable function system 2200 can generate an authentication key and provide the authentication key to the encoding module 2300.

參照圖1及圖11闡述的物理不可克隆功能系統2200或參照圖2闡述的物理不可克隆功能電路100可應用於物理不可克隆功能系統2200。物理不可克隆功能系統2200可被實作為硬體、硬體與軟體的組合或硬體與韌體的組合。The physical unclonable function system 2200 illustrated with reference to FIGS. 1 and 11 or the physical unclonable function circuit 100 illustrated with reference to FIG. 2 can be applied to the physical unclonable function system 2200. The physical unclonable functional system 2200 can be implemented as a combination of hardware, hardware and software, or a combination of hardware and firmware.

物理不可克隆功能系統2200可通過將通過使用電阻元件對電源電壓進行分壓而產生的物理不可克隆功能單元的輸出電壓與通過使用電阻元件對電源電壓進行分壓而產生的參考電壓進行比較來產生物理不可克隆功能單元的資料值。因此,所述多個物理不可克隆功能單元的資料值可維持為均勻的,而不論環境如何改變。The physical unclonable function system 2200 can be generated by comparing an output voltage of a physical unclonable functional unit generated by dividing a power supply voltage by using a resistive element with a reference voltage generated by dividing a power supply voltage by using a resistive element. Physical data values of functional units that cannot be cloned. Therefore, the data values of the plurality of physical unclonable functional units can be maintained uniform regardless of the environment.

另外,物理不可克隆功能系統2200可相對於在確定物理不可克隆功能單元的資料值時使用的參考電壓(例如,第一參考電壓)來設置具有充分餘裕的死區,並阻止具有處於死區中的輸出電壓的那些物理不可克隆功能單元,從而降低物理不可克隆功能系統2200的位元誤碼率。因此,不需要複雜的錯誤檢查及修正邏輯。In addition, the physical unclonable function system 2200 can set a dead zone with sufficient margin relative to a reference voltage (eg, a first reference voltage) used in determining a data value of a physical unclonable functional unit, and prevent having a dead zone The output voltages of those physical unclonable functional units, thereby reducing the bit error rate of the physical unclonable functional system 2200. Therefore, no complicated error checking and correction logic is required.

由於物理不可克隆功能系統2200通過將通過分壓產生的參考電壓(例如,第二參考電壓)與多個物理不可克隆功能單元的輸出電壓進行比較來以簡單方式產生有效性資料,因此可節省為確定不穩定的物理不可克隆功能單元所進行的測試的時間及成本。Since the physical unclonable function system 2200 generates the validity data in a simple manner by comparing the reference voltage (for example, the second reference voltage) generated by the divided voltage with the output voltages of the plurality of physical unclonable functional units, the saving is Determine the time and cost of testing performed by unstable physical unclonable functional units.

儘管已參照本發明概念的示例性實施例具體示出並闡述了本發明概念,然而所屬領域中的技術人員應理解,在不背離由申請專利範圍界定的本發明概念的精神及範圍的條件下,可在本文中作出形式及細節上的各種改變。Although the present invention has been particularly shown and described with reference to the exemplary embodiments of the present invention, those skilled in the art should understand, without departing from the spirit and scope of the inventive concept Various changes in form and detail can be made herein.

100、100a、100b、100c‧‧‧物理不可克隆功能電路100, 100a, 100b, 100c‧‧‧ physical unclonable functional circuits

110‧‧‧物理不可克隆功能單元陣列110‧‧‧Physical unclonable functional unit array

120、120a、120b‧‧‧參考電壓產生器120, 120a, 120b‧‧‧ reference voltage generator

121‧‧‧第一選擇器121‧‧‧First selector

122‧‧‧第二選擇器122‧‧‧Second selector

130、130a、130b‧‧‧比較電路130, 130a, 130b‧‧‧ comparison circuit

131‧‧‧第一比較器131‧‧‧First comparator

131a、131b‧‧‧比較器131a, 131b‧‧‧ comparator

132‧‧‧第二比較器132‧‧‧Second comparator

132a‧‧‧開關電路132a‧‧‧Switch circuit

133‧‧‧第三比較器133‧‧‧ third comparator

133b‧‧‧參考選擇器133b‧‧‧Reference selector

140‧‧‧組合邏輯140‧‧‧ combinatorial logic

150‧‧‧單元選擇電路150‧‧‧Unit selection circuit

151‧‧‧單元選擇器151‧‧‧Unit selector

160‧‧‧調節器160‧‧‧Regulator

170‧‧‧保護電路170‧‧‧Protection circuit

180‧‧‧區塊開關180‧‧‧block switch

200、200a‧‧‧控制器200, 200a‧‧‧ controller

210‧‧‧控制邏輯210‧‧‧Control logic

220‧‧‧密鑰產生器220‧‧‧Key Generator

230‧‧‧錯誤檢查及修正電路230‧‧‧Error checking and correction circuit

300、2410‧‧‧非揮發性記憶體300, 2410‧‧‧ Non-volatile memory

1000、1000a、2200‧‧‧物理不可克隆功能系統1000, 1000a, 2200‧‧‧ physical unclonable functional system

2000‧‧‧電子裝置2000‧‧‧Electronic devices

2100‧‧‧處理器2100‧‧‧ processor

2300‧‧‧編碼模組2300‧‧‧Code Module

2400‧‧‧非揮發性記憶體控制器2400‧‧‧Non-volatile memory controller

2500‧‧‧隨機存取記憶體2500‧‧‧ Random access memory

2600‧‧‧介面2600‧‧‧ interface

AR1‧‧‧第一區域AR1‧‧‧ first area

AR2‧‧‧第二區域AR2‧‧‧ second area

AR3‧‧‧第三區域AR3‧‧‧ third area

AR4‧‧‧第四區域AR4‧‧‧ fourth area

BGR‧‧‧帶隙參考電路BGR‧‧‧ bandgap reference circuit

CL1‧‧‧物理不可克隆功能單元/第一物理不可克隆功能單元CL1‧‧‧Physical unclonable functional unit/first physical unclonable functional unit

CL2~CLn‧‧‧物理不可克隆功能單元CL2~CLn‧‧‧Physical unclonable functional unit

CN1、CN2~CNn、CNR‧‧‧連接節點CN1, CN2~CNn, CNR‧‧‧ connection nodes

CON‧‧‧控制信號CON‧‧‧ control signal

D1‧‧‧多個物理不可克隆功能單元的輸出電壓的分佈D1‧‧‧ Distribution of output voltages of multiple physical unclonable functional units

D2‧‧‧第一參考電壓的分佈D2‧‧‧Distribution of the first reference voltage

ENB‧‧‧禁能信號ENB‧‧‧ disable signal

Iref‧‧‧參考電流Iref‧‧‧reference current

KEY‧‧‧密鑰/認證密鑰/初始認證密鑰KEY‧‧‧Key/Authentication Key/Initial Authentication Key

PDT‧‧‧物理不可克隆功能資料PDT‧‧‧Physical unclonable functional data

MD‧‧‧模式信號MD‧‧‧ mode signal

N1_1、N1_2~N1_m、N2_1、N2_2~N2_m‧‧‧節點N1_1, N1_2~N1_m, N2_1, N2_2~N2_m‧‧‧ nodes

ND1‧‧‧第一端ND1‧‧‧ first end

R‧‧‧電阻器R‧‧‧Resistors

RE1‧‧‧電阻元件/第一電阻元件RE1‧‧‧resistive element / first resistive element

RE2‧‧‧電阻元件/第二電阻元件RE2‧‧‧resistive element / second resistive element

RE3、RE3a、RE3b‧‧‧第三電阻元件RE3, RE3a, RE3b‧‧‧ third resistance element

RE4、RE4a、RE4b‧‧‧第四電阻元件RE4, RE4a, RE4b‧‧‧ fourth resistance element

REQ‧‧‧認證密鑰請求信號REQ‧‧‧Authorization key request signal

RSEL‧‧‧參考選擇信號RSEL‧‧‧ reference selection signal

RST1‧‧‧第一比較結果RST1‧‧‧ first comparison result

RST2‧‧‧第二比較結果RST2‧‧‧ second comparison result

RST3‧‧‧第三比較結果RST3‧‧‧ third comparison result

RSW1‧‧‧第一參考開關RSW1‧‧‧ first reference switch

RSW2‧‧‧第二參考開關RSW2‧‧‧Second reference switch

RSW3‧‧‧第三參考開關RSW3‧‧‧ third reference switch

S100、S110、S120、S130、S140、S150、S160、S200、S210、S220、S230、S240、S200a、S210a、S220a、S230a、S240a‧‧‧操作S100, S110, S120, S130, S140, S150, S160, S200, S210, S220, S230, S240, S200a, S210a, S220a, S230a, S240a‧‧

SET1‧‧‧第一設置信號SET1‧‧‧ first setting signal

SET2‧‧‧第二設置信號SET2‧‧‧Second setting signal

SSW1、SSW2~SSWn‧‧‧單元選擇開關SSW1, SSW2~SSWn‧‧‧ unit selection switch

Vcell‧‧‧輸出電壓Vcell‧‧‧ output voltage

VDD、VSS‧‧‧電源電壓VDD, VSS‧‧‧ power supply voltage

VDDE‧‧‧外部電源電壓VDDE‧‧‧ external power supply voltage

VDT‧‧‧有效性資料VDT‧‧‧ Validity Information

Vref‧‧‧第一參考電壓Vref‧‧‧ first reference voltage

Vref_H‧‧‧第二參考電壓Vref_H‧‧‧second reference voltage

Vref_L‧‧‧第三參考電壓Vref_L‧‧‧ third reference voltage

VS‧‧‧有效性信號VS‧‧‧effective signal

通過結合圖式閱讀以下詳細說明,將會更清楚地理解本發明概念的實施例,在圖式中: 圖1是根據本發明概念示例性實施例的物理不可克隆功能(PUF)系統的方塊圖。 圖2是根據本發明概念示例性實施例的物理不可克隆功能電路的電路圖。 圖3A示出多個物理不可克隆功能單元的分佈。 圖3B示出第一參考電壓的分佈。 圖3C是用於根據第二參考電壓及第三參考電壓來解釋死區(dead zone)的示意圖。 圖4A至圖4C示出根據示例性實施例的有效性確定方法。 圖5示出根據本發明概念示例性實施例的比較電路的實例。 圖6示出根據本發明概念示例性實施例的比較電路的實例。 圖7是根據本發明概念示例性實施例的參考電壓產生器的實例的示意圖。 圖8是根據本發明概念示例性實施例的參考電壓產生器的實例的示意圖。 圖9是根據本發明概念示例性實施例的物理不可克隆功能電路的電路圖。 圖10是根據本發明概念示例性實施例的物理不可克隆功能電路的電路圖。 圖11是根據本發明概念示例性實施例的物理不可克隆功能系統的方塊圖。 圖12是根據本發明概念示例性實施例的操作物理不可克隆功能系統的方法的流程圖。 圖13是根據示例性實施例的圖12所示操作S100的流程圖。 圖14是根據示例性實施例的圖12所示操作S200的流程圖。 圖15是根據示例性實施例的圖12所示操作S200的流程圖。 圖16是示出根據本發明概念示例性實施例的電子裝置的方塊圖。Embodiments of the inventive concept will be more clearly understood from the following detailed description of the embodiments of the invention. FIG. 1 is a block diagram of a physical unclonable function (PUF) system according to an exemplary embodiment of the inventive concept. . 2 is a circuit diagram of a physical unclonable function circuit in accordance with an exemplary embodiment of the inventive concept. Figure 3A shows the distribution of multiple physical unclonable functional units. FIG. 3B shows the distribution of the first reference voltage. FIG. 3C is a schematic diagram for explaining a dead zone according to a second reference voltage and a third reference voltage. 4A through 4C illustrate a method of determining validity according to an exemplary embodiment. FIG. 5 illustrates an example of a comparison circuit in accordance with an exemplary embodiment of the inventive concept. FIG. 6 illustrates an example of a comparison circuit in accordance with an exemplary embodiment of the inventive concept. FIG. 7 is a schematic diagram of an example of a reference voltage generator according to an exemplary embodiment of the inventive concept. FIG. 8 is a schematic diagram of an example of a reference voltage generator according to an exemplary embodiment of the inventive concept. 9 is a circuit diagram of a physical unclonable function circuit in accordance with an exemplary embodiment of the inventive concept. FIG. 10 is a circuit diagram of a physical unclonable function circuit according to an exemplary embodiment of the inventive concept. 11 is a block diagram of a physical unclonable function system in accordance with an exemplary embodiment of the inventive concept. FIG. 12 is a flowchart of a method of operating a physical unclonable function system, according to an exemplary embodiment of the inventive concept. FIG. 13 is a flowchart of operation S100 shown in FIG. 12, according to an exemplary embodiment. FIG. 14 is a flowchart of operation S200 shown in FIG. 12, according to an exemplary embodiment. FIG. 15 is a flowchart of operation S200 shown in FIG. 12, according to an exemplary embodiment. FIG. 16 is a block diagram showing an electronic device according to an exemplary embodiment of the inventive concept.

Claims (20)

一種物理不可克隆功能電路,包括: 多個物理不可克隆功能單元,被配置成通過對電源電壓進行分壓來產生輸出電壓; 參考電壓產生器,被配置成通過對所述電源電壓進行分壓來產生第一參考電壓;以及 比較電路,被配置成將所述多個物理不可克隆功能單元的所述輸出電壓與所述第一參考電壓依序進行比較,並輸出所述多個物理不可克隆功能單元的資料值。A physical unclonable functional circuit comprising: a plurality of physical unclonable functional units configured to generate an output voltage by dividing a supply voltage; a reference voltage generator configured to divide the supply voltage by Generating a first reference voltage; and comparing circuitry configured to sequentially compare the output voltage of the plurality of physical unclonable functional units with the first reference voltage and output the plurality of physical unclonable functions The data value of the unit. 如申請專利範圍第1項所述的物理不可克隆功能電路,其中所述多個物理不可克隆功能單元中的每一者包括至少兩個電阻元件,且 所述多個物理不可克隆功能單元基於所述至少兩個電阻元件之間的不匹配來產生處於不同電位的所述輸出電壓。The physical unclonable function circuit of claim 1, wherein each of the plurality of physical unclonable functional units includes at least two resistive elements, and the plurality of physical unclonable functional units are based on A mismatch between the at least two resistive elements is described to produce the output voltage at different potentials. 如申請專利範圍第1項所述的物理不可克隆功能電路,其中所述多個物理不可克隆功能單元中的每一者包括串聯連接的第一電阻器與第二電阻器, 所述電源電壓施加到所述第一電阻器的第一端,且 所述第一電阻器的第二端的電壓被作為所述輸出電壓中的一者輸出。The physical unclonable function circuit of claim 1, wherein each of the plurality of physical unclonable functional units comprises a first resistor and a second resistor connected in series, the power voltage application A first end of the first resistor, and a voltage of the second end of the first resistor is output as one of the output voltages. 如申請專利範圍第3項所述的物理不可克隆功能電路,其中所述參考電壓產生器包括串聯連接的第三電阻器與第四電阻器, 所述電源電壓施加到所述第三電阻器的第一端, 所述第三電阻器的第二端的電壓被作為所述第一參考電壓輸出,且 所述第一電阻器與所述第二電阻器之間的不匹配大於所述第三電阻器與所述第四電阻器之間的不匹配。The physical unclonable function circuit of claim 3, wherein the reference voltage generator comprises a third resistor and a fourth resistor connected in series, the power voltage being applied to the third resistor a first end, a voltage of the second end of the third resistor is output as the first reference voltage, and a mismatch between the first resistor and the second resistor is greater than the third resistor A mismatch between the device and the fourth resistor. 如申請專利範圍第4項所述的物理不可克隆功能電路,其中所述第一電阻器的電阻值與所述第二電阻器的電阻值相同, 所述第三電阻器的電阻值與所述第四電阻器的電阻值相同,且 所述第三電阻器的寬度大於所述第一電阻器的寬度。The physical unclonable function circuit of claim 4, wherein a resistance value of the first resistor is the same as a resistance value of the second resistor, and a resistance value of the third resistor is The fourth resistor has the same resistance value, and the third resistor has a width greater than a width of the first resistor. 如申請專利範圍第1項所述的物理不可克隆功能電路,其中所述參考電壓產生器產生比所述第一參考電壓高的第二參考電壓以及比所述第一參考電壓低的第三參考電壓,且 所述比較電路將所述多個物理不可克隆功能單元的所述輸出電壓中的每一者與所述第二參考電壓及所述第三參考電壓中的至少一者進行比較。The physical unclonable function circuit of claim 1, wherein the reference voltage generator generates a second reference voltage higher than the first reference voltage and a third reference lower than the first reference voltage a voltage, and the comparison circuit compares each of the output voltages of the plurality of physical unclonable functional units with at least one of the second reference voltage and the third reference voltage. 如申請專利範圍第6項所述的物理不可克隆功能電路,還包括有效性確定邏輯,所述有效性確定邏輯被配置成基於比較結果來產生指示所述多個物理不可克隆功能單元中的每一者的有效性的有效性資料。The physical unclonable function circuit of claim 6, further comprising validity determination logic configured to generate, based on the comparison result, each of the plurality of physical unclonable functional units Information on the effectiveness of one's effectiveness. 如申請專利範圍第7項所述的物理不可克隆功能電路,其中所述有效性確定邏輯將所述多個物理不可克隆功能單元中的如下一個物理不可克隆功能單元確定為有效的物理不可克隆功能單元:所述一個物理不可克隆功能單元所具有的所述輸出電壓處於與所述第二參考電壓相等或比所述第二參考電壓高的電位或者處於比所述第三參考電壓低的電位。The physical unclonable function circuit of claim 7, wherein the validity determination logic determines one of the plurality of physical unclonable functional units as a valid physical unclonable function Unit: The output voltage of the one physical unclonable functional unit is at a potential equal to or higher than the second reference voltage or at a lower potential than the third reference voltage. 如申請專利範圍第6項所述的物理不可克隆功能電路,其中所述參考電壓產生器包括被施加所述電源電壓的第一電阻器串以及串聯連接到所述第一電阻器串的第二電阻器串, 基於第一設置信號加以選擇的所述第一電阻器串的多個節點中的一者的電壓被作為所述第二參考電壓輸出,且 基於第二設置信號加以選擇的所述第二電阻器串的多個節點中的一者的電壓被作為所述第三參考電壓輸出。The physical unclonable function circuit of claim 6, wherein the reference voltage generator comprises a first resistor string to which the power supply voltage is applied and a second series connected to the first resistor string in series a resistor string, a voltage of one of a plurality of nodes of the first resistor string selected based on the first set signal being output as the second reference voltage, and the selected based on the second set signal A voltage of one of a plurality of nodes of the second resistor string is output as the third reference voltage. 如申請專利範圍第1項所述的物理不可克隆功能電路,其中所述參考電壓產生器包括: 帶隙參考電路,被配置成基於所述電源電壓產生參考電流;以及 電阻器串,被配置成基於所述參考電流產生所述第一參考電壓。The physical unclonable function circuit of claim 1, wherein the reference voltage generator comprises: a bandgap reference circuit configured to generate a reference current based on the power supply voltage; and a resistor string configured to The first reference voltage is generated based on the reference current. 如申請專利範圍第1項所述的物理不可克隆功能電路,其中所述電源電壓是由調節器電路提供。The physical unclonable function circuit of claim 1, wherein the power supply voltage is provided by a regulator circuit. 如申請專利範圍第1項所述的物理不可克隆功能電路,還包括保護電路,所述保護電路被配置成感測所述電源電壓的電位, 其中當所述電源電壓的電位處於額定電壓範圍之外時,所述保護電路阻止所述參考電壓產生器與所述比較電路中的至少一者的操作。The physical unclonable function circuit of claim 1, further comprising a protection circuit configured to sense a potential of the power supply voltage, wherein a potential of the power supply voltage is within a rated voltage range Additionally, the protection circuit blocks operation of at least one of the reference voltage generator and the comparison circuit. 一種物理不可克隆功能系統,包括: 物理不可克隆功能電路,包括多個物理不可克隆功能單元,所述物理不可克隆功能電路被配置成將所述多個物理不可克隆功能單元的輸出電壓與參考電壓進行比較並產生物理不可克隆功能資料及有效性資料,所述物理不可克隆功能資料包括所述多個物理不可克隆功能單元的資料值,所述有效性資料指示所述多個物理不可克隆功能單元的所述資料值的有效性;以及 控制器,被配置成控制所述物理不可克隆功能電路並基於所述物理不可克隆功能資料及所述有效性資料來產生密鑰。A physical unclonable functional system, comprising: a physical unclonable functional circuit comprising a plurality of physical unclonable functional units, the physical unclonable functional circuit configured to output an output voltage and a reference voltage of the plurality of physical unclonable functional units Comparing and generating physical unclonable functional data including data values of the plurality of physical unclonable functional units, the validity data indicating the plurality of physical unclonable functional units The validity of the data value; and a controller configured to control the physical unclonable function circuit and generate a key based on the physical unclonable function data and the validity data. 如申請專利範圍第13項所述的物理不可克隆功能系統,其中所述多個物理不可克隆功能單元中的每一者包括第一電阻元件及第二電阻元件,所述第一電阻元件連接到電源電壓,所述第二電阻元件串聯連接到所述第一電阻元件,且 所述第一電阻元件與所述第二電阻元件具有相同的目標電阻值。The physical unclonable functional system of claim 13, wherein each of the plurality of physical unclonable functional units comprises a first resistive element and a second resistive element, the first resistive element being connected to a power supply voltage, the second resistive element is connected in series to the first resistive element, and the first resistive element and the second resistive element have the same target resistance value. 如申請專利範圍第13項所述的物理不可克隆功能系統,其中所述參考電壓包括第一參考電壓、第二參考電壓及第三參考電壓, 所述第二參考電壓高於所述第一參考電壓, 所述第三參考電壓低於所述第一參考電壓, 所述物理不可克隆功能電路將所述多個物理不可克隆功能單元的所述輸出電壓與所述第一參考電壓進行比較,以產生所述多個物理不可克隆功能單元的資料值,且 所述物理不可克隆功能電路確定所述多個物理不可克隆功能單元中的具有處於所述第二參考電壓與所述第三參考電壓之間的輸出電壓的物理不可克隆功能單元的資料值為有效的。The physical unclonable function system of claim 13, wherein the reference voltage comprises a first reference voltage, a second reference voltage, and a third reference voltage, wherein the second reference voltage is higher than the first reference a voltage, the third reference voltage is lower than the first reference voltage, and the physical unclonable function circuit compares the output voltage of the plurality of physical unclonable functional units with the first reference voltage to Generating a data value of the plurality of physical unclonable functional units, and the physical unclonable function circuit determines that the plurality of physical unclonable functional units have the second reference voltage and the third reference voltage The data value of the physical unclonable functional unit between the output voltages is valid. 如申請專利範圍第13項所述的物理不可克隆功能系統,其中所述控制器基於所述有效性資料來選擇所述多個物理不可克隆功能單元的所述資料值中的有效資料值,且 所述控制器輸出所選擇的所述有效資料值作為所述密鑰。The physical unclonable function system of claim 13, wherein the controller selects a valid data value in the data value of the plurality of physical unclonable functional units based on the validity data, and The controller outputs the selected valid material value as the key. 如申請專利範圍第13項所述的物理不可克隆功能系統,其中所述控制器基於所述有效性資料來選擇所述多個物理不可克隆功能單元的所述資料值中的有效資料值,且 所述控制器基於所選擇的所述有效資料值來執行錯誤檢查及修正,並基於被執行所述錯誤檢查及修正的資料來產生所述密鑰。The physical unclonable function system of claim 13, wherein the controller selects a valid data value in the data value of the plurality of physical unclonable functional units based on the validity data, and The controller performs error checking and correction based on the selected valid data value, and generates the key based on the material on which the error checking and correction is performed. 一種具有物理不可克隆功能的積體電路,所述積體電路包括: 多個物理不可克隆功能單元,被配置成產生輸出電壓,所述輸出電壓中的每一者是通過基於至少兩個電阻器對電源電壓進行分壓來產生; 參考電壓產生器,被配置成通過基於電阻器串對所述電源電壓進行分壓來產生第一參考電壓、第二參考電壓及第三參考電壓,所述第二參考電壓高於所述第一參考電壓,所述第三參考電壓低於所述第二參考電壓; 比較電路,被配置成將所述多個物理不可克隆功能單元的所述輸出電壓與所述第一參考電壓、所述第二參考電壓及所述第三參考電壓中的每一者進行比較,並輸出比較結果;以及 組合邏輯,被配置成基於所述比較結果來產生指示所述多個物理不可克隆功能單元中的每一者的有效性的有效性資料。An integrated circuit having a physical unclonable function, the integrated circuit comprising: a plurality of physical unclonable functional units configured to generate an output voltage, each of the output voltages being based on at least two resistors And dividing a power supply voltage to generate; a reference voltage generator configured to generate a first reference voltage, a second reference voltage, and a third reference voltage by dividing the power supply voltage based on the resistor string, The second reference voltage is higher than the first reference voltage, the third reference voltage is lower than the second reference voltage; the comparison circuit is configured to connect the output voltage of the plurality of physical unclonable functional units Comparing each of the first reference voltage, the second reference voltage, and the third reference voltage, and outputting a comparison result; and combining logic configured to generate the indication based on the comparison result Validity data for the validity of each of the physical unclonable functional units. 如申請專利範圍第18項所述的積體電路,還包括被配置成儲存所述有效性資料的非揮發性記憶體。The integrated circuit of claim 18, further comprising a non-volatile memory configured to store the validity data. 如申請專利範圍第18項所述的積體電路,其中所述比較電路反應於認證密鑰請求信號來將所述多個物理不可克隆功能單元的所述輸出電壓與所述第一參考電壓進行比較,並輸出比較結果作為所述多個物理不可克隆功能單元的資料值。The integrated circuit of claim 18, wherein the comparison circuit is responsive to an authentication key request signal to perform the output voltage of the plurality of physical unclonable functional units with the first reference voltage Comparing and outputting the comparison result as the data value of the plurality of physical unclonable functional units.
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