TW201907052A - Apparatus and Method of Atomic Layer Deposition Having A Recycle Module - Google Patents
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本發明係有關於一種鍍膜裝置與方法,更特別來說是具有回收模組之原子層鍍膜系統,能將未反應的前驅物有效地回收,並減少廢氣廢水對環境的污染。 The present invention relates to a coating apparatus and method, and more particularly to an atomic layer coating system having a recycling module, which can efficiently recover unreacted precursors and reduce environmental pollution of exhaust gas.
原子層沉積技術是利用製程氣體與材料表面進行化學吸附作用,由於反應僅在表面發生反應,具自我侷限(Self-limited)特性,使得每次的成長循環,僅會在表面形成一層原子的薄膜,可控制膜厚度達原子級(0.1奈米),是現存所有鍍膜方法中,可成長最高品質薄膜的鍍膜技術。 Atomic layer deposition technology uses the process gas to chemically adsorb the surface of the material. Since the reaction only reacts on the surface, it has self-limited characteristics, so that each time the growth cycle, only a layer of atomic film is formed on the surface. It can control the film thickness to the atomic level (0.1 nm), which is the coating technology for the highest quality film in all existing coating methods.
原子層沉積技術可進行超薄高介電(High-k)材料鍍膜外,亦可針對微小的電路結構提供孔洞填補能力,在具有高深寬比的動態隨機存取記憶體(Dynamic Random Access Memory,DRAM)電容結構與微機電元件中提供厚度均勻的鍍膜;在元件封裝上,具有高緻密性的原子層沉積技術漸漸被導入有激發光二極體(Organic Light-Emitting Diode,OLED)元件的封裝。傳統的原子層鍍膜系統,具有前驅物輸送模組,用於提供一前驅物蒸氣壓給製程腔體。 Atomic layer deposition technology can be used for ultra-thin high-k material coating, and can also provide hole filling capability for small circuit structures in dynamic random access memory (Dynamic Random Access Memory) with high aspect ratio. DRAM) provides a uniform thickness coating in the capacitor structure and MEMS components; on the component package, the atomic layer deposition technique with high density is gradually introduced into the package of the Organic Light-Emitting Diode (OLED) component. A conventional atomic layer coating system has a precursor transport module for providing a precursor vapor pressure to the process chamber.
典型的原子層鍍膜成膜機制,大致分成四個步驟: The typical atomic layer coating film formation mechanism is roughly divided into four steps:
步驟一:於一時間T1區內,將前驅物A注入並吸附於基材之表面,所注入前驅物和基材表面產生反應。此反應具有自我限制(self-limiting)之特性,多餘的前驅物並不會再吸附於已經吸附的前驅物分子上面。 Step 1: In a time zone T1, the precursor A is injected and adsorbed on the surface of the substrate, and the injected precursor and the surface of the substrate react. This reaction is self-limiting and the excess precursor is no longer adsorbed onto the adsorbed precursor molecules.
步驟二:於一時間T2區內,清除多餘未反應之前驅物A及反應後之副產物。該步驟是藉由通入惰性氣體或低反應氣體,例如氬氣或氮氣,將未反應之前驅物以及副產物經由該真空幫浦抽氣帶離該反應腔體。 Step 2: In the T2 zone, the excess unreacted precursor A and the by-products after the reaction are removed. In this step, unreacted precursors and by-products are pumped away from the reaction chamber by means of an inert gas or a low-reaction gas such as argon or nitrogen.
步驟三:於一時間T3區內,將反應物B注入並吸附於基材之表面,以形成一新鍵結的化合物。 Step 3: In a time zone T3, the reactant B is injected and adsorbed on the surface of the substrate to form a newly bonded compound.
步驟四:於一時間T4區內,清除多餘未反應之反應物B及反應後之副產物。該步驟同樣是藉由通入惰性氣體或低反應氣體,例如氬氣或氮氣,將未反應之前驅物以及副產物經由該真空幫浦抽氣帶離該反應腔體。 Step 4: In the T4 zone, the excess unreacted reactant B and the by-products after the reaction are removed. This step is also carried out by pumping unreacted precursors and by-products through the vacuum pump by means of an inert gas or a low-reaction gas such as argon or nitrogen.
第1圖為先前技術的原子層鍍膜系統示意圖。該原子層鍍膜系統100,其包含一反應腔體110、一氣體傳送模組120、一真空幫浦130與一廢氣處理模組140。該反應腔體110接收來自氣體傳送模組120之氣體;該真空幫浦130用於將該反應腔體110的未反應的氣體與副產物抽出;以及該廢氣處理模組140用於處理該反應腔體110的未反應的氣體與副產物。該氣體傳送模組120主要包含鋼瓶121a與鋼瓶121b,以及一進氣管路122a與一進氣管路122b。切換元件鋼瓶121a藉由該進氣管路122a將前驅物A的蒸氣傳輸進入該反應腔體110;鋼瓶121b藉由該進氣管路122b將反應物B的蒸氣傳輸進入該反應腔體110。反應物B切換元件124能在適當時間導入前驅物A的蒸氣或反應物B的蒸氣導入到進氣管路126進入該反應腔體110。該反應腔體110之出氣管路112連接該反應腔體110與真空幫浦130,並具有切換元件124,可配合該真空幫浦130的抽氣功能。該真空幫浦130之出氣管路132連接該真空幫浦130與該廢氣處理模組140,並具有切換元件134,可配合該真空幫浦130抽氣功能,使未反應的氣體與副產物到達該廢氣處理模組140進行處理,並由排氣管路142排出。該廢氣處理模組140典型的處理方法是將使未反應的氣體與副產物予以燃燒後 並排放。然而,典型的原子層鍍膜成膜機制於步驟一所注入的前驅物,和基材表面產生反應的比率通常低於1%,剩餘的前驅物和副產物由該真空幫浦130抽氣抽走,燃燒後並排放於大氣,除造成汙染,亦造成該前驅物的損失。 Figure 1 is a schematic diagram of a prior art atomic layer coating system. The atomic layer coating system 100 includes a reaction chamber 110, a gas delivery module 120, a vacuum pump 130, and an exhaust gas treatment module 140. The reaction chamber 110 receives gas from the gas delivery module 120; the vacuum pump 130 is used to extract unreacted gases and by-products from the reaction chamber 110; and the exhaust treatment module 140 is used to process the reaction Unreacted gases and by-products of the chamber 110. The gas transfer module 120 mainly includes a cylinder 121a and a cylinder 121b, and an intake line 122a and an intake line 122b. The switching element cylinder 121a transfers the vapor of the precursor A into the reaction chamber 110 through the inlet line 122a; the cylinder 121b transfers the vapor of the reactant B into the reaction chamber 110 by the inlet line 122b. The reactant B switching element 124 can introduce the vapor of the precursor A or the vapor of the reactant B into the intake line 126 into the reaction chamber 110 at an appropriate time. The gas outlet line 112 of the reaction chamber 110 is connected to the reaction chamber 110 and the vacuum pump 130, and has a switching element 124 that can cooperate with the pumping function of the vacuum pump 130. The outlet pipe 132 of the vacuum pump 130 is connected to the vacuum pump 130 and the exhaust gas treatment module 140, and has a switching element 134, which can cooperate with the pumping function of the vacuum pump 130 to allow unreacted gas and by-products to arrive. The exhaust gas treatment module 140 is processed and discharged by the exhaust line 142. The exhaust gas treatment module 140 is typically treated by burning unreacted gases and by-products and discharging them. However, the typical atomic layer coating film formation mechanism in the first step of the precursor injected, the ratio of reaction with the surface of the substrate is usually less than 1%, and the remaining precursors and by-products are pumped away by the vacuum pump 130. After being burned and discharged into the atmosphere, in addition to causing pollution, the precursor is also lost.
為了解決上述問題,有需要提供一種原子層鍍膜系統,以克服先前技術的缺點。 In order to solve the above problems, it is desirable to provide an atomic layer coating system to overcome the disadvantages of the prior art.
本發明之主要目的在於提出一種具有回收模組的原子層鍍膜系統,以及具有回收模組的原子層鍍膜方式,能將未反應的前驅物有效地回收,並減少廢氣廢水對環境的污染。 The main object of the present invention is to provide an atomic layer coating system with a recycling module and an atomic layer coating method with a recycling module, which can effectively recover unreacted precursors and reduce environmental pollution of waste gas.
為達本發明之本發明的主要目的,本發明提供一種原子層鍍膜系統,其包含一氣體傳送模組;一反應腔體;一真空幫浦;以及一氣體處理模組。 In order to achieve the primary object of the present invention, the present invention provides an atomic layer coating system comprising a gas delivery module; a reaction chamber; a vacuum pump; and a gas processing module.
該氣體傳送模組提供至少一氣體;該反應腔體,具有複數個進氣管路及一出氣管路,接收來自一氣體傳送模組之該些氣體;該真空幫浦,連接於該反應腔體之該出氣管路,具有一出氣管路,用於將該反應腔體的未反應的氣體與副產物抽出;以及該氣體處理模組,連接於該真空幫浦之該出氣管路,用於有效分離該反應腔體的未反應的氣體與副產物。 The gas delivery module provides at least one gas; the reaction chamber has a plurality of intake lines and an outlet line for receiving the gases from a gas delivery module; the vacuum pump is connected to the reaction chamber The gas outlet pipe has an gas outlet pipe for extracting unreacted gas and by-products from the reaction chamber; and the gas processing module is connected to the gas outlet pipe of the vacuum pump Unreacted gases and by-products that effectively separate the reaction chamber.
該氣體處理模組包含:一切換元件;一回收裝置與一廢氣處理裝置。該切換元件,連接一第一路徑管路與一第二路徑管路;該回收裝置,連接該第一路徑管路,用於將所接收到之該反應腔體的未反應的氣體與副產物做一回收處理;該廢氣處理裝置,連 接該第二路徑管路,用於將所接收到之該反應腔體的未反應的氣體與副產物做一分解處理後排出。 The gas processing module comprises: a switching element; a recovery device and an exhaust gas treatment device. The switching element is connected to a first path line and a second path line; the recovery device is connected to the first path line for unreacted gas and by-products of the received reaction chamber Performing a recycling process; the exhaust gas treatment device is connected to the second path line for discharging the unreacted gas and by-products of the reaction chamber received and decomposing.
根據本發明之一特徵,該回收裝置具有一冷卻補抓元件與一收集容器,用於冷凝並收集所接收到之未反應的氣體冷凝成之一液體或一固體。 According to a feature of the invention, the recovery device has a cooling replenishing element and a collection container for condensing and collecting the unreacted gas received to condense into a liquid or a solid.
根據本發明之一特徵,該回收裝置具有一調整溫度之功能,可以控制將所接收到之該反應腔體的未反應的氣體冷凝成該液體或該固體,而將所接收到之副產物排出。 According to a feature of the invention, the recovery device has a function of adjusting the temperature, and can control the condensation of the unreacted gas of the reaction chamber received into the liquid or the solid to discharge the by-products received. .
為達本發明之本發明的另一目的,本發明提供一種原子層鍍膜之氣體回收方法,其包含下列步驟:步驟一:在一反應腔體中接收來自一氣體傳送模組之至少一氣體;步驟二:使用一真空幫浦將該反應腔體的未反應的氣體與副產物抽出;以及步驟三:使用一氣體處理模組處理該反應腔體的未反應的氣體與副產物。 In order to achieve the object of the present invention, the present invention provides a gas recovery method for atomic layer coating, comprising the following steps: Step 1: receiving at least one gas from a gas delivery module in a reaction chamber; Step 2: extracting the unreacted gas and by-products of the reaction chamber using a vacuum pump; and Step 3: treating the unreacted gas and by-products of the reaction chamber using a gas processing module.
其中在步驟三中包含下列步驟:在一第一時間,藉由一切換元件,將所接收到之該反應腔體的未反應的氣體與副產物,導入到該氣體處理模組之一第一路徑管路;在一第二時間,藉由該切換元件,將所接收到之該反應腔體的未反應的氣體與副產物,導入到該氣體處理模組之一第二路徑管路。 In the third step, the following steps are included: at a first time, the unreacted gas and by-products of the reaction chamber received are first introduced into the gas processing module by a switching element. a path line; at a second time, the unreacted gas and by-products of the reaction chamber received are introduced into a second path of the gas processing module by the switching element.
根據本發明之一特徵,該第一路徑管路連接一回收裝置,該回收裝置具有一冷卻補抓元件,用於將所接收到之該反應腔體的未反應的氣體與副產物做一回收處理。 According to a feature of the invention, the first path line is connected to a recovery device having a cooling replenishing element for recycling the unreacted gas and by-products of the reaction chamber received. deal with.
根據本發明之一特徵,該第二路徑管路連接一廢氣處理裝置,該廢氣處理裝置用於將所接收到之該反應腔體的未反應的氣體與副產物做一分解處理後排出。 According to a feature of the invention, the second path line is connected to an exhaust gas treatment device for decomposing the unreacted gas and by-products of the reaction chamber received.
本發明之具有回收模組之原子層鍍膜系統具有以下之功效: The atomic layer coating system with the recycling module of the invention has the following effects:
1.將未反應的前驅物有效地回收,提高前驅物的使用效率。 1. The unreacted precursor is efficiently recovered to improve the efficiency of use of the precursor.
2.將未反應的前驅物有效地回收,並減少廢氣廢水對環境的污染。 2. Effectively recover unreacted precursors and reduce environmental pollution of waste gas.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉數個較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the objects, features and advantages of the present invention more comprehensible, the following detailed description of the preferred embodiments and the accompanying drawings.
100‧‧‧原子層鍍膜系統 100‧‧‧Atomic layer coating system
110‧‧‧反應腔體 110‧‧‧Reaction chamber
120‧‧‧氣體傳送模組 120‧‧‧ gas transmission module
122a‧‧‧進氣管路 122a‧‧‧Intake line
122b‧‧‧進氣管路 122b‧‧‧Intake line
124‧‧‧切換元件 124‧‧‧Switching components
124‧‧‧進氣管路 124‧‧‧Intake line
130‧‧‧真空幫浦 130‧‧‧vacuum pump
132‧‧‧出氣管路 132‧‧‧Exhaust line
134‧‧‧切換元件 134‧‧‧Switching components
140‧‧‧廢氣處理模組 140‧‧‧Exhaust gas treatment module
142‧‧‧排氣管路 142‧‧‧Exhaust line
200‧‧‧原子層鍍膜系統 200‧‧‧Atomic Coating System
210‧‧‧反應腔體 210‧‧‧Reaction chamber
212‧‧‧出氣管路 212‧‧‧Exhaust line
220‧‧‧氣體傳送模組 220‧‧‧ gas transmission module
222a‧‧‧進氣管路 222a‧‧‧Intake line
222b‧‧‧進氣管路 222b‧‧‧Intake line
224‧‧‧切換元件 224‧‧‧Switching components
230‧‧‧真空幫浦 230‧‧‧vacuum pump
232‧‧‧出氣管路 232‧‧‧Exhaust line
235‧‧‧切換元件 235‧‧‧Switching components
236‧‧‧第一路徑管路 236‧‧‧First path pipeline
238‧‧‧第二路徑管路 238‧‧‧Second path pipeline
240‧‧‧氣體處理模組 240‧‧‧Gas Handling Module
250‧‧‧回收裝置 250‧‧‧Recycling device
252‧‧‧冷卻補抓元件 252‧‧‧Cooling and retrieving components
256‧‧‧底部收集端 256‧‧‧ bottom collection end
254‧‧‧出氣管路 254‧‧‧Exhaust line
258‧‧‧收集容器 258‧‧‧Collection container
260‧‧‧抽氣幫浦 260‧‧‧Exhaust pump
262‧‧‧出氣管路 262‧‧‧Exhaust line
270‧‧‧廢氣處理裝置 270‧‧‧Exhaust gas treatment device
272‧‧‧出氣管路 272‧‧‧Exhaust line
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數個較佳實施例,並配合所附圖式,作詳細說明如下。雖然本發明可表現為不同形式之實施例,但附圖所示者及於下文中說明者係為本發明可之較佳實施例,並請了解本文所揭示者係考量為本發明之一範例,且並非意圖用以將本發明限制於圖示及/或所描述之特定實施例中。 The above and other objects, features, and advantages of the present invention will become more apparent and understood. While the invention may be embodied in various forms, the embodiments illustrated in the drawings It is not intended to limit the invention to the particular embodiments illustrated and/or described.
第1圖:先前技術之原子層鍍膜系統示意圖。 Figure 1: Schematic diagram of a prior art atomic layer coating system.
第2圖:本發明之具有回收模組的原子層鍍膜系統之實施示意圖。 Fig. 2 is a schematic view showing the implementation of the atomic layer coating system with the recycling module of the present invention.
第3圖:應用本發明之回收裝置之實施示意圖。 Fig. 3 is a schematic view showing the implementation of the recovery apparatus to which the present invention is applied.
第4圖:應用本發明之原子層鍍膜系統之氣體回收方法實施流程圖。 Fig. 4 is a flow chart showing the implementation of a gas recovery method using the atomic layer coating system of the present invention.
本發明將由協同附圖之下列詳盡描述而更為全面瞭解。現將描述某些例示性實施例以提供本文所揭示之裝置及方法之結構、功能、製造及使用原理的全面瞭解。此等實施例之一個或多個實施例於附圖中加以繪示。熟習此項技術者將瞭解,本文所特定描述且在附圖中繪示之裝置及方 法係非限制性例示性實施例,且本發明之範疇僅由申請專利範圍加以界定。結合一例示性實施例繪示或描述之特徵可與其他實施例之諸特徵進行結合。此等修飾及變動將包括於本發明之範疇內。 The invention will be more fully understood from the following detailed description of the drawings. Certain illustrative embodiments are now described to provide a comprehensive understanding of the structure, function, One or more embodiments of these embodiments are illustrated in the accompanying drawings. Those skilled in the art will recognize that the devices and methods that are specifically described and illustrated in the drawings are non-limiting exemplary embodiments, and the scope of the invention is defined only by the scope of the claims. Features illustrated or described in connection with an exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be included within the scope of the invention.
雖然本發明可表現為不同形式之實施例,但附圖所示者及於下文中說明者係為本發明之較佳實施例,並請瞭解本文所揭示者係考量為本發明之一範例,且並非意圖用以將本發明限制於圖示及/或所描述之特定實施例中。 The present invention may be embodied in a different form of embodiment, and the following description of the invention is intended to be a preferred embodiment of the invention. It is not intended to limit the invention to the particular embodiments illustrated and/or described.
現請參考第2圖,其係表示應用本發明之回收模組的原子層鍍膜系統之示意圖。根據本發明之一種原子層鍍膜系統200,其包含一反應腔體210;一真空幫浦230;以及一氣體處理模組240。 Referring now to Figure 2, there is shown a schematic diagram of an atomic layer coating system to which the recycling module of the present invention is applied. An atomic layer coating system 200 according to the present invention includes a reaction chamber 210; a vacuum pump 230; and a gas processing module 240.
該氣體傳送模組210提供至少一氣體,特別是前驅物的氣體。該氣體傳送模組120主要包含鋼瓶221a與鋼瓶221b,以及一進氣管路222a與一進氣管路222b。鋼瓶221a藉由該進氣管路222a將一前驅物的蒸氣傳輸進入該反應腔體210;鋼瓶221b藉由該進氣管路222b將另一前驅物的蒸氣傳輸進入該反應腔體210。一切換元件224能在適當時間導入不同前驅物的蒸氣進入該反應腔體210。 The gas delivery module 210 provides at least one gas, particularly a precursor gas. The gas delivery module 120 mainly includes a cylinder 221a and a cylinder 221b, and an intake line 222a and an intake line 222b. The cylinder 221a transfers vapor of a precursor into the reaction chamber 210 through the inlet line 222a; the cylinder 221b transfers vapor of the other precursor into the reaction chamber 210 by the inlet line 222b. A switching element 224 can introduce vapors of different precursors into the reaction chamber 210 at appropriate times.
該反應腔體210,具有複數個進氣管路226及一出氣管路212,接收來自該氣體傳送模組220之氣體;且該反應腔體210之外表面係接地。該前驅物的蒸氣進入到該反應腔體210內,吸附於一基材之表面,所注入前驅物和基材表面產生反應。此反應具有自我限制(self-limiting)之特性,多餘的前驅物並不會再吸附於已經吸附的前驅物分子上面。圖中以進氣管路226來表示複數個進氣管路,但事實上,該反應腔體210可以同時接上許多的進氣管路。又更詳細來說,進氣管路122a代表前驅物A經由進氣管路226進入該反應腔體210 的管路之一,進氣管路122b代表反應物B經由進氣管路226進入該反應腔體210的管路之一。 The reaction chamber 210 has a plurality of intake lines 226 and an outlet line 212 for receiving gas from the gas transfer module 220; and the outer surface of the reaction chamber 210 is grounded. The vapor of the precursor enters the reaction chamber 210 and is adsorbed on the surface of a substrate, and the injected precursor reacts with the surface of the substrate. This reaction is self-limiting and the excess precursor is no longer adsorbed onto the adsorbed precursor molecules. In the figure, a plurality of intake lines are indicated by intake line 226, but in fact, the reaction chamber 210 can be connected to a plurality of intake lines at the same time. In more detail, the intake line 122a represents one of the conduits through which the precursor A enters the reaction chamber 210 via the intake line 226, and the intake line 122b represents the reactant B entering the passage via the intake line 226. One of the conduits of the reaction chamber 210.
本發明中,該反應腔體210均係為碳鋼、不銹鋼、鈦、鈦合金、鋁或鋁合金加工形成。該反應腔體210內外層亦可鍍上黃金等低活性金屬,或鍍上奈米材料塗層,防止前驅物腐蝕腔體或外在環境化合物破壞該反應腔體210。 In the present invention, the reaction chambers 210 are all formed by processing carbon steel, stainless steel, titanium, titanium alloy, aluminum or aluminum alloy. The inner and outer layers of the reaction chamber 210 may also be plated with a low activity metal such as gold or coated with a coating of nano material to prevent the precursor from corroding the cavity or the external environment compound from damaging the reaction chamber 210.
該真空幫浦230,連接於該反應腔體210之該出氣管路212,具有一出氣管路232,用於將該反應腔體210的未反應的氣體與副產物抽出。該真空幫浦230採用習知之真空幫浦即可實現。真空幫浦230用以在製程時,藉由控制元件214的控制,抽出該反應腔體210內氣體之方式,使得該反應腔體210內部之壓力值位於0.5-760托耳(Torr)之間。 The vacuum pump 230 is connected to the gas outlet pipe 212 of the reaction chamber 210 and has an gas outlet pipe 232 for extracting unreacted gas and by-products from the reaction chamber 210. The vacuum pump 230 can be implemented using a conventional vacuum pump. The vacuum pump 230 is used to extract the gas in the reaction chamber 210 by the control of the control element 214 during the process, so that the pressure inside the reaction chamber 210 is between 0.5-760 Torr. .
該氣體處理模組240,連接於該真空幫浦230之該出氣管路232,用於處理該反應腔體210的未反應的氣體與副產物。該氣體處理模組300包含:一切換元件235;一回收裝置250與一廢氣處理裝置260。該切換元件235,連接一第一路徑管路236與一第二路徑管路238。該回收裝置250,連接該第一路徑管路236,具有一冷卻補抓元件252,用於將所接收到之該反應腔體210的未反應的氣體與副產物做一回收處理;該廢氣處理裝置240,連接該第二路徑管路236,用於將所接收到之該反應腔體210的未反應的氣體與副產物做一分解處理後排出。 The gas processing module 240 is connected to the gas outlet pipe 232 of the vacuum pump 230 for treating unreacted gases and by-products of the reaction chamber 210. The gas processing module 300 includes: a switching element 235; a recovery device 250 and an exhaust gas treatment device 260. The switching element 235 is connected to a first path line 236 and a second path line 238. The recovery device 250 is connected to the first path line 236 and has a cooling replenishing member 252 for recycling the unreacted gas and by-products of the reaction chamber 210 received; The device 240 is connected to the second path line 236 for decomposing the unreacted gas and by-products of the reaction chamber 210 received and discharging.
本發明中,該回收裝置250,係為碳鋼、不銹鋼或鈦、鋁合金加工形成。該回收裝置250內外層亦可鍍上黃金等低活性金屬,或在外層鍍鋅、或內外層可具奈米塗層,可防前驅物腐蝕腔體或外在環境化合物破壞該回收裝置250。該冷卻補抓元件252 係為碳鋼、不銹鋼、鈦、鈦合金、鋁或鋁合金加工形成。冷卻補抓元件252內外層亦可鍍上黃金等低活性金屬,或鍍上奈米材料塗層,防止前驅物腐蝕腔體或外在環境化合物破壞該冷卻補抓元件252。 In the present invention, the recovery device 250 is formed by processing carbon steel, stainless steel or titanium, or aluminum alloy. The inner and outer layers of the recovery device 250 may also be plated with a low-activity metal such as gold, or may be galvanized on the outer layer or may have a nano-coating on the inner and outer layers to prevent the precursor from corroding the cavity or the external environmental compound from damaging the recovery device 250. The cooling replenishing element 252 is formed by processing carbon steel, stainless steel, titanium, titanium alloy, aluminum or aluminum alloy. The inner and outer layers of the cooling and retrieving element 252 may also be plated with a low activity metal such as gold or coated with a coating of nano material to prevent the precursor from corroding the cavity or the external environment compound from damaging the cooling replenishing element 252.
現請參考第3圖,進一步表示應用本發明之回收裝置的示意圖。該回收模組250,主要包含一冷卻補抓元件252與一收集容器258。該冷卻補抓元件252將所接收到之該反應腔體210的未反應的氣體冷凝成一液體或一固體。該收集容器258用於收集所冷凝成該液體或固體。該回收裝置250係具有一調整溫度之功能,可以控制將所接收到之該反應腔體210的未反應的氣體冷凝成該液體或固體,而將所接收到之副產物排出。該回收裝置250更包含一出氣管路254連接於一抽氣幫浦270,用於所接收到之該反應腔體210的之副產物,由一排氣管路272排出。 Referring now to Figure 3, a schematic diagram of a recovery apparatus to which the present invention is applied is further illustrated. The recycling module 250 mainly includes a cooling and replenishing component 252 and a collection container 258. The cooling replenishing element 252 condenses the unreacted gas of the reaction chamber 210 received into a liquid or a solid. The collection vessel 258 is used to collect the condensation into the liquid or solid. The recovery unit 250 has a function of adjusting the temperature, and can control the unreacted gas of the received reaction chamber 210 to be condensed into the liquid or solid to discharge the by-products received. The recovery device 250 further includes an outlet line 254 connected to an evacuation pump 270 for receiving by-products of the reaction chamber 210 and being discharged by an exhaust line 272.
該冷卻補抓元件252係一冷凝元件,是一個可以將氣態物質凝結成液態的設備,例如是一種熱交換器。該冷卻補抓元件252利用冷卻的方式使物質凝結,凝結過程中物質放出潛熱,使冷凝元件的冷媒溫度昇高。該冷卻補抓元件252的結構可以是一個網狀,因此所冷凝的液體或固體可以進入到該回收裝置250之底部收集端256,在進入該收集容器258後取出。較佳地,該收集容器258係一圓形的結構,亦即是底部收集端256較佳係為一圓形的形狀。該收集容器258與該回收模組250是可分離的。當該收集容器258收集未反應的氣體所冷凝成的液體或固體到一定量時,可以將該收集容器258時取下,此時繼續冷凝的液體或固體可以進入到該回收裝置250之底部收集端256。 The cooling replenishing element 252 is a condensing element and is a device that can condense a gaseous substance into a liquid state, such as a heat exchanger. The cooling replenishing element 252 condenses the substance by means of cooling, and the substance releases latent heat during the coagulation process, so that the temperature of the refrigerant of the condensing element rises. The structure of the cooling replenishing element 252 can be a mesh such that the condensed liquid or solid can enter the bottom collection end 256 of the recovery unit 250 and be removed after entering the collection container 258. Preferably, the collection container 258 is of a circular configuration, that is, the bottom collection end 256 is preferably in the shape of a circle. The collection container 258 is separable from the recovery module 250. When the collection container 258 collects the liquid or solid condensed by the unreacted gas to a certain amount, the collection container 258 can be removed, and the continuously condensed liquid or solid can enter the bottom of the recovery device 250 to collect. End 256.
需注意的是,本發明中之該回收裝置250具有可以調整溫度之功能。該回收裝置250的調整溫度之設計主要在於,讓所接 收到的未反應的氣而體能夠被該回收裝置250的該冷卻補抓元件252所冷凝成液體或固體,而讓副產物不冷凝成液體或固體,而繼續由該抽氣幫浦270抽氣經由出氣管路272排出。因此,亦可以說,該回收裝置250可以調整溫度之功能主要是在於控制該冷卻補抓元件252的溫度。 It should be noted that the recovery device 250 of the present invention has a function of adjusting the temperature. The set temperature of the recovery unit 250 is primarily designed to allow the received unreacted gas to be condensed into a liquid or solid by the cooling replenishing element 252 of the recovery unit 250, leaving the byproducts non-condensing. The liquid or solid continues to be exhausted by the pumping pump 270 through the outlet line 272. Therefore, it can also be said that the function of the recovery device 250 to adjust the temperature is mainly to control the temperature of the cooling and replenishing member 252.
在一實施例中,該回收裝置250的溫度係設置在攝氏10度至50度之間。以最常用的氧化鋁(Al2O3)製程而言,該反應腔體210製程溫度在140度至350度之間,所欲冷凝回收的三甲基鋁(Al(CH3)3、TMA)在常溫常壓下的沸點為125度,因此,當該回收裝置250的溫度係設置在攝氏10度至50度之間,可以使得三甲基鋁凝結成液態,但其副產物甲基(CH4)仍為氣態。 In one embodiment, the temperature of the recovery device 250 is set between 10 and 50 degrees Celsius. In the most common alumina (Al 2 O 3 ) process, the reaction chamber 210 has a process temperature of between 140 and 350 degrees, and the trimethylaluminum (Al(CH 3 ) 3 , TMA) to be condensed and recovered. The boiling point at normal temperature and pressure is 125 degrees. Therefore, when the temperature of the recovery device 250 is set between 10 and 50 degrees Celsius, the trimethyl aluminum can be condensed into a liquid state, but its by-product methyl group ( CH 4 ) is still in a gaseous state.
本發明中,該廢氣處理裝置260可以有許多實施方式,典型的商用方式是利用液體來清潔氣流之裝置,或稱濕式收集器(wet collectors)或濕式滌塵器(wet scrubbers),包括:旋風式洗滌器(cyclone scrubber)、燻煙洗滌器(fume scrubber)、離子式洗滌器(ionizing scrubber)、機械式洗滌器(mechanical scrubber)、孔口式洗滌器(orifice scrubber)、填充塔式洗滌器(packed tower)、平板式洗滌器(plate scrubber)、噴霧式洗滌器(spray chamber)、文式洗滌器(venturi scrubber)、溼式過濾器(wet filter)等。洗滌器適合於處理高溫、易燃及易爆氣體。該廢氣處理裝置260使氣流密切接觸液體,氣流中之粒子、蒸氣或氣體等污染物因而從廢氣中分離出來。洗滌器利用各種方式溼潤污染物粒子,然後將已溼潤或未溼潤之粒子衝擊至收集表面,接著藉由液體沖洗,將已收集之粒子沖刷移除。除物理作用之外,在沖刷移除之過程中亦可能發生化學作用(如吸收、溶解、與添加物反應等)。 In the present invention, the exhaust gas treatment device 260 can have many embodiments. A typical commercial method is a device that uses a liquid to clean a gas stream, or a wet collector or a wet scrubber, including : cyclone scrubber, fume scrubber, ionizing scrubber, mechanical scrubber, orifice scrubber, packed tower A packed tower, a plate scrubber, a spray chamber, a venturi scrubber, a wet filter, and the like. The scrubber is suitable for handling high temperature, flammable and explosive gases. The exhaust gas treatment device 260 brings the gas stream into close contact with the liquid, and the contaminants such as particles, vapors or gases in the gas stream are thus separated from the exhaust gas. The scrubber wets the contaminant particles in a variety of ways and then impacts the wetted or unwetted particles onto the collection surface, followed by rinsing the liquid to remove the collected particles. In addition to physical effects, chemical reactions (such as absorption, dissolution, reaction with additives, etc.) may occur during scouring removal.
本發明中之許多進氣管路與出氣管路,包含該氣體傳送模組210之複數個進氣管路122a、122b、該反應腔體210之進氣管路226、該反應腔體210之出氣管路212、該真空幫浦230之該出氣管路232以及該氣體處理模組300之該第一路徑管路238與該第二路徑管路236等,由於該些管路反覆的使用前驅物蒸氣,特別是受到周圍環境降溫的影響,在管路部分低溫的位置點上,容易形成管路的氣體殘餘和聚積。隨著聚積不斷增加,會產生前驅物冷凝成液體或形成前驅物固態顆粒等問題。因此,在上述管路之外部纏繞加熱包或加熱保護套,對各管路進行加熱,以便維持管路內的前驅物氣體狀態,防止前驅物氣體在進氣管路與出氣管路冷凝成液體或形成前驅物固態顆粒,一方面避免顆粒進一步進入反應腔210內,造成薄膜缺陷,一方面可延長管路使用期限,並可使氣體於管路順利回收較高純度的前驅物氣體。 The plurality of intake and exhaust lines of the present invention include a plurality of intake lines 122a, 122b of the gas transfer module 210, an intake line 226 of the reaction chamber 210, and a reaction chamber 210. An outlet line 212, the outlet line 232 of the vacuum pump 230, the first path line 238 of the gas processing module 300, and the second path line 236, etc., due to the use of the pipelines The vapor of the material, especially affected by the cooling of the surrounding environment, is likely to form gas residuals and accumulation in the pipeline at a low temperature point of the pipeline. As the accumulation increases, problems such as condensation of the precursor into a liquid or formation of solid particles of the precursor are generated. Therefore, the heating package or the heating protective sleeve is wound on the outside of the above-mentioned pipeline, and each pipeline is heated to maintain the state of the precursor gas in the pipeline to prevent the precursor gas from condensing into a liquid in the intake pipeline and the outlet pipeline. Or forming solid particles of the precursor, on the one hand, avoiding further entry of the particles into the reaction chamber 210, causing film defects, on the one hand, prolonging the service life of the pipeline, and allowing the gas to smoothly recover the higher purity precursor gas in the pipeline.
此外,在管路上通常具有一些切換元件。例如,切換元件124、切換元件214,切換元件235等。該些切換元件基本功能為閥門(valve)或物質流量控制器(mass flow controller,MFC)等。閥門可用手動或自動,通過控制來改變流體介質的壓力、溫度、電磁場和流量變化來啟動閥門的開關。閥門可以對這些變化進行連續或重複的操作。在本實施例中較佳的,係採用自動控制閥門,特別是能夠快速切換的閥門,能使閥門準確控制流體介質的各項要求。 In addition, there are usually some switching elements on the pipeline. For example, switching element 124, switching element 214, switching element 235, and the like. The basic functions of the switching elements are a valve or a mass flow controller (MFC). The valve can be actuated manually or automatically, by controlling the pressure, temperature, electromagnetic field and flow changes of the fluid medium to activate the valve. The valve can perform continuous or repeated operations on these changes. Preferably, in the present embodiment, an automatic control valve, particularly a valve that can be quickly switched, is used to enable the valve to accurately control the requirements of the fluid medium.
現請參考第4圖,其顯示本發明之原子層鍍膜系統之氣體回收方法。該方法係應用本發明之具有回收模組之原子層鍍膜系統之實施流程圖。亦即是,該方法係使用第2圖的與第3圖的系統,因此所有的組件在此不再贅述。本發明之一種原子層鍍膜之氣體回收方法,其包含下列步驟: 步驟一:在一反應腔體210中接收來自一氣體傳送模組220之至少一氣體;步驟二:使用一真空幫浦230將該反應腔體210的未反應的氣體與副產物抽出;以及步驟三:使用一氣體處理模組240處理該反應腔體210的未反應的氣體與副產物;其中在步驟三中包含下列步驟:在一第一時間內,藉由一切換元件235,將所接收到之該反應腔體210的未反應的氣體與副產物,導入到該氣體處理模組240之一第一路徑管路236;在一第二時間內,藉由該切換元件235,將所接收到之該反應腔體210的未反應的氣體與副產物,導入到該氣體處理模組240之一第二路徑管路238。 Referring now to Figure 4, there is shown a gas recovery method for the atomic layer coating system of the present invention. The method is an implementation flow chart of an atomic layer coating system with a recycling module of the present invention. That is, the method uses the systems of FIGS. 2 and 3, and therefore all components will not be described herein. The gas recovery method for atomic layer coating of the present invention comprises the following steps: Step 1: receiving at least one gas from a gas transfer module 220 in a reaction chamber 210; Step 2: using a vacuum pump 230 The unreacted gas and by-products of the reaction chamber 210 are withdrawn; and the third step: treating the unreacted gas and by-products of the reaction chamber 210 with a gas treatment module 240; wherein the following steps are included in the third step: In a first time, through the switching element 235, the unreacted gas and by-products of the reaction chamber 210 are introduced into the first path line 236 of the gas processing module 240; In a second time, the unreacted gas and by-products of the reaction chamber 210 received are introduced into the second path line 238 of the gas processing module 240 by the switching element 235.
該第一路徑管路236連接一回收裝置250,該回收裝置具有一冷卻補抓元件252,用於將所接收到之該反應腔體的未反應的氣體與副產物做一回收處理。其中該第二路徑管路238連接一廢氣處理裝置260,該廢氣處理裝置260用於將所接收到之該反應腔體210的未反應的氣體與副產物做一分解處理後排出。 The first path line 236 is connected to a recovery device 250 having a cooling replenishing element 252 for recycling the unreacted gas and by-products of the reaction chamber received. The second path line 238 is connected to an exhaust gas treatment device 260 for decomposing the unreacted gas and by-products of the reaction chamber 210 received.
如先前技術所述,典型的原子層鍍膜成膜機制,大致分成四個步驟: As described in the prior art, a typical atomic layer coating film formation mechanism is roughly divided into four steps:
步驟一:於一時間T1區內,將前驅物A注入並吸附於基材之表面,所注入前驅物和基材表面產生反應。此反應具有自我限制(self-limiting)之特性,多餘的前驅物並不會再吸附於已經吸附的前驅物分子上面。 Step 1: In a time zone T1, the precursor A is injected and adsorbed on the surface of the substrate, and the injected precursor and the surface of the substrate react. This reaction is self-limiting and the excess precursor is no longer adsorbed onto the adsorbed precursor molecules.
步驟二:於一時間T2區內,清除多餘未反應之前驅物A及反應後之副產物。該步驟是藉由通入惰性氣體或低反應氣體,例如氬氣或氮氣,將未反應之前驅物以及副產物經由該真空幫浦抽氣帶離該反應腔體。 Step 2: In the T2 zone, the excess unreacted precursor A and the by-products after the reaction are removed. In this step, unreacted precursors and by-products are pumped away from the reaction chamber by means of an inert gas or a low-reaction gas such as argon or nitrogen.
步驟三:於一時間T3區內,將反應物B注入並吸附於基材之表面,以形成一新鍵結的化合物。 Step 3: In a time zone T3, the reactant B is injected and adsorbed on the surface of the substrate to form a newly bonded compound.
步驟四:於一時間T4區內,清除多餘未反應之反應物B及反應後之副產物。該步驟同樣是藉由通入惰性氣體或低反應氣體,例如氬氣或氮氣,將未反應之前驅物以及副產物經由該真空幫浦抽氣帶離該反應腔體。 Step 4: In the T4 zone, the excess unreacted reactant B and the by-products after the reaction are removed. This step is also carried out by pumping unreacted precursors and by-products through the vacuum pump by means of an inert gas or a low-reaction gas such as argon or nitrogen.
通常這樣四個步驟即完成一次循環,每次循環完成接近一個原子等級厚度的成膜。要增加成膜的厚度,就要繼續上述的四個步驟的循環。 Usually, the four steps are completed in one cycle, and each cycle completes film formation with a thickness close to one atomic level. To increase the thickness of the film, it is necessary to continue the cycle of the above four steps.
本發明之一種原子層鍍膜之氣體回收方法,該第一時間係介於指大於等於時間T1區,且少於等於時間T1區與時間T2區之總和。亦即是,第一時間的設定至少包含了步驟一的時間T1,但最多包含了步驟一的時間T1與步驟二的時間T2總和。亦即,在該第一時間內,藉由一切換元件235,將所接收到之該反應腔體210的未反應的氣體與副產物,導入到該氣體處理模組240之該第一路徑管路236,送至該回收裝置250進一步回收。舉例來說,若時間T1區為1秒,時間T2區為2秒,則第一時間的設定係小於1秒(T1時間),但少於3秒(T1與T2總和)。 In the gas recovery method for atomic layer coating of the present invention, the first time is between the reference time zone T1 and less than or equal to the sum of the time zone T1 and the time zone T2. That is, the setting of the first time includes at least the time T1 of the first step, but at most the sum of the time T1 of the first step and the time T2 of the second step. That is, during the first time, the unreacted gas and by-products of the reaction chamber 210 received are introduced into the first path tube of the gas processing module 240 by a switching element 235. Road 236 is sent to the recovery unit 250 for further recovery. For example, if the time T1 zone is 1 second and the time T2 zone is 2 seconds, the first time setting is less than 1 second (T1 time), but less than 3 seconds (the sum of T1 and T2).
該第二時間係至少包含了典型的原子層鍍膜成膜機制之時間T3區與時間T4區之總和,但少於時間T2至時間T4區之總和。在該第二時間內,藉由該切換元件235,將所接收到之該反應腔體210的未反應的氣體與副產物,導入到該氣體處理模組240之該第二路徑管路238,送至該廢氣處理裝置260進一步處理。舉 例來說,若T1區為1秒,時間T2區為2秒,時間T3區為4秒,時間T2為2秒,則第二時間的設定係大於6秒(T3與T4總和),但少於8秒(T2、T3與T4總和)。 The second time period includes at least the sum of the time T3 zone and the time T4 zone of the typical atomic layer coating film formation mechanism, but less than the sum of the time T2 to the time T4 zone. During the second time, the unreacted gas and by-products of the reaction chamber 210 received are introduced into the second path line 238 of the gas processing module 240 by the switching element 235. It is sent to the exhaust gas treatment device 260 for further processing. For example, if the T1 area is 1 second, the time T2 area is 2 seconds, the time T3 area is 4 seconds, and the time T2 is 2 seconds, the second time setting is greater than 6 seconds (the sum of T3 and T4), but less In 8 seconds (T2, T3 and T4 total).
在一實施例,該反應腔體210較佳係一電漿製程用的腔體,具有一電漿阻抗。且該電漿的頻率係介於10至150MHz之間,較佳地,該電漿之頻率為40.68MHz。由於原子層鍍膜成長的化學特性,並不是所有的材料都適合用原子層鍍膜成長。因電漿激發形成許多自由基,其自由基可幫助成膜的鍵結並形成有利於下次反應的反應表面,所以可以於更低的製程溫度下成長。因此反應並不會因為熱能不足而受到限制。因此,電漿可提供自由基增加其反應性,於低溫下成長反應更加完全。因此,藉由電漿輔助方式,可以成長一些傳統加熱式原子層鍍膜成長無法成長之薄膜材料。 In one embodiment, the reaction chamber 210 is preferably a cavity for a plasma process having a plasma impedance. And the frequency of the plasma is between 10 and 150 MHz. Preferably, the frequency of the plasma is 40.68 MHz. Due to the chemical nature of atomic layer coating growth, not all materials are suitable for growth with atomic layer coating. Since the plasma excites to form many free radicals, its free radicals can help bond the film and form a reaction surface that is favorable for the next reaction, so it can grow at a lower process temperature. Therefore, the reaction is not limited by insufficient heat. Therefore, the plasma can provide free radicals to increase its reactivity, and the growth reaction is more complete at low temperatures. Therefore, by means of the plasma-assisted method, it is possible to grow a thin film material which cannot be grown by a conventional heated atomic layer coating.
本發明之具有回收模組之原子層鍍膜系統具有以下之功效: The atomic layer coating system with the recycling module of the invention has the following effects:
1.將未反應的前驅物有效地回收,提高前驅物的使用效率。 1. The unreacted precursor is efficiently recovered to improve the efficiency of use of the precursor.
2.將未反應的前驅物有效地回收,並減少廢氣廢水對環境的污染。 2. Effectively recover unreacted precursors and reduce environmental pollution of waste gas.
雖然本發明已以前述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與修改。如上述的解釋,都可以作各型式的修正與變化,而不會破壞此發明的精神。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the present invention has been described in its preferred embodiments, it is not intended to limit the scope of the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
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