TW201904355A - Plasma spraying head, plasma spraying deice, and plasma spraying method capable of arranging intervals among a plurality of spraying guns to be narrower - Google Patents

Plasma spraying head, plasma spraying deice, and plasma spraying method capable of arranging intervals among a plurality of spraying guns to be narrower Download PDF

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TW201904355A
TW201904355A TW107118257A TW107118257A TW201904355A TW 201904355 A TW201904355 A TW 201904355A TW 107118257 A TW107118257 A TW 107118257A TW 107118257 A TW107118257 A TW 107118257A TW 201904355 A TW201904355 A TW 201904355A
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plasma
spray
spraying
powder
nozzle
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TW107118257A
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TWI779043B (en
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小林義之
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H05H1/3468Vortex generators
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134Plasma spraying
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/28Cooling arrangements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Plasma Technology (AREA)
  • Nozzles (AREA)

Abstract

The present invention provides a plasma spraying head capable of arranging the intervals of a plurality of spraying guns to be narrower. An embodiment of the plasma spraying head utilizes plasma to melt the powder of a thermal spraying material and forms a film on the object by the thermal spraying powder, and comprises a spraying gun having a nozzle and a plasma generation unit, wherein the nozzle utilizes the gas generated by plasma to convey the powder of the spraying material and injects the powder from the front opening, and the plasma generation unit decomposes the plasma generated by the nozzle by using electric power output from a DC power source to generate a plasma having the shaft core in communication with the nozzle; and, a main body capable of supporting the plurality of spraying guns as a whole and containing a refrigerant flow path through which the refrigerant flows.

Description

電漿熔射頭、電漿熔射裝置及電漿熔射方法Plasma spray head, plasma spray device and plasma spray method

本發明係關於一種電漿熔射頭、電漿熔射裝置及電漿熔射方法。The invention relates to a plasma spray head, a plasma spray device and a plasma spray method.

已知有一種電漿熔射裝置,其係將熔射材料之粒子粉末一面利用由高速氣體形成之電漿噴流之熱熔融一面向基材之表面噴出,從而於基材之表面形成覆膜(例如參照專利文獻1)。 [先前技術文獻] [專利文獻]A plasma spraying device is known. The powder of the spraying material is melted by the heat of a plasma jet formed by a high-speed gas and sprayed on the surface facing the substrate, thereby forming a coating on the surface of the substrate ( For example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2014-123663號公報[Patent Document 1] Japanese Patent Laid-Open No. 2014-123663

[發明所欲解決之問題][Problems to be solved by the invention]

此外,例如於長條物上成膜之情形時或於成膜前後進行退火處理之情形時,要求以窄間距配置複數個熔射槍。In addition, for example, when a film is formed on a long object or when annealing is performed before and after film formation, it is required to arrange a plurality of spray guns at a narrow pitch.

但是,於上述電漿熔射裝置中,由於粉末之尺寸較大,且自熔射槍外部供給熔射材料之粉末,故熔射槍之尺寸較大,以窄間距配置複數個熔射槍較為困難。又,由於使粉末熔融時之電力較高,故就放熱問題而言,以窄間距配置複數個熔射槍較為困難。However, in the above plasma spraying device, because the size of the powder is large and the powder of the spraying material is supplied from the outside of the spraying gun, the size of the spraying gun is relatively large. difficult. In addition, since the electric power is high when the powder is melted, it is difficult to arrange a plurality of melting shot guns at a narrow pitch in terms of heat radiation.

本發明係鑒於上述內容而完成者,其目的在於提供一種能夠將複數個熔射槍之間隔配置為較窄之電漿熔射頭。 [解決問題之技術手段]The present invention was made in view of the foregoing, and an object of the present invention is to provide a plasma spray head capable of arranging a narrow interval between a plurality of spray guns. [Technical means to solve the problem]

為達成上述目的,本發明之一態樣之電漿熔射頭係利用電漿使熔射材料之粉末熔融,藉由已熔融之粉末於被對象物上成膜者;且具有:熔射槍,其包含噴嘴及電漿產生部,該噴嘴係利用電漿產生氣體運送上述熔射材料之粉末,並將該粉末自前端部之開口噴射,該電漿產生部係藉由直流電源輸出之電力將上述噴嘴所噴射之上述電漿產生氣體分解,產生軸芯與上述噴嘴共通之電漿;以及本體部,其將複數個上述熔射槍一體支持,且於內部包含供冷媒流經之冷媒流路。 [發明之效果]In order to achieve the above object, a plasma spray head according to one aspect of the present invention uses a plasma to melt powder of a spray material, and forms a film on an object by using the molten powder; and has: a spray gun It includes a nozzle and a plasma generating part. The nozzle uses the gas generated by the plasma to transport the powder of the above-mentioned spray material and sprays the powder from the opening at the front end. The plasma generating part is an electric power output by a DC power supply. The plasma generated by the nozzle is decomposed to generate a plasma common to the shaft core and the nozzle; and a main body unit which integrally supports a plurality of the above-mentioned melting guns, and contains a refrigerant flow through which the refrigerant flows. road. [Effect of the invention]

根據發明之電漿熔射頭,能夠將複數個熔射槍之間隔配置為較窄。According to the plasma spray head of the invention, the interval between the plurality of spray guns can be arranged to be narrow.

以下,參照圖式說明用以實施本發明之形態。再者,於本說明書及圖式中,關於實質上相同之構成,藉由附加相同元件符號而省略重複之說明。Hereinafter, embodiments for implementing the present invention will be described with reference to the drawings. In addition, in this specification and the drawings, the same components are denoted by the same reference numerals, and redundant descriptions are omitted.

[電漿熔射裝置] 對本發明之實施形態之電漿熔射裝置進行說明。圖1係本發明之實施形態之電漿熔射裝置之概略圖。圖2係表示圖1之電漿熔射裝置之電漿熔射頭之一例的立體圖。圖3係用以說明圖2之電漿熔射頭之本體部之圖。圖4係通過圖2之電漿熔射頭之噴嘴之中心軸之縱向剖視圖。圖5係圖2之電漿熔射頭之橫向剖視圖。[Plasma Spraying Apparatus] A plasma spraying apparatus according to an embodiment of the present invention will be described. FIG. 1 is a schematic diagram of a plasma spraying apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view showing an example of a plasma spray head of the plasma spray device of FIG. 1. FIG. FIG. 3 is a diagram for explaining a main body portion of the plasma spray head of FIG. 2. FIG. 4 is a longitudinal sectional view of the central axis of the nozzle of the plasma spray head of FIG. 2. 5 is a cross-sectional view of the plasma spray head of FIG. 2.

如圖1所示,本發明之實施形態之電漿熔射裝置1係如下裝置:自噴嘴26之前端部26b之開口26c噴射熔射材料之粉末R1,一面利用由高速氣體形成之電漿噴流P之熱使熔射材料之粉末熔融,一面將其向作為被對象物之基材之表面噴出,從而於基材之表面形成包含熔射材料之膜。作為基材之一例,可列舉鋰(Li)、鋁(Al)、銅(Cu)、銀(Ag)、金(Au)、鎳(Ni)、金屬化合物(不鏽鋼等)、絕緣膜(工程塑膠、陶瓷)等。As shown in FIG. 1, the plasma spraying device 1 according to the embodiment of the present invention is a device that sprays powder R1 of the spraying material from the opening 26c of the front end 26b of the nozzle 26, while using a plasma jet formed of a high-speed gas The heat of P melts the powder of the thermal spray material and sprays it toward the surface of the substrate as the object, thereby forming a film containing the thermal spray material on the surface of the substrate. Examples of the substrate include lithium (Li), aluminum (Al), copper (Cu), silver (Ag), gold (Au), nickel (Ni), metal compounds (such as stainless steel), and insulating films (engineering plastics). , Ceramics), etc.

電漿熔射裝置1具有給料器10、電漿熔射頭20、氣體供給部30、冷卻器單元40及直流電源50。The plasma spraying apparatus 1 includes a feeder 10, a plasma spraying head 20, a gas supply unit 30, a cooler unit 40, and a DC power source 50.

給料器10將熔射材料之粉末R1供給至噴嘴26。熔射材料之粉末R1被收納於給料器10內之容器11中。熔射材料之粉末R1例如為粒徑1 μm~50 μm之細粉末。給料器10設置有致動器12。The feeder 10 supplies the powder R1 of the shot material to the nozzle 26. The powder R1 of the shot material is stored in a container 11 in the feeder 10. The powder R1 of the thermal spray material is, for example, a fine powder having a particle diameter of 1 μm to 50 μm. The feeder 10 is provided with an actuator 12.

電漿熔射頭20具有本體部21及複數個熔射槍25。於本實施形態中,如圖1及圖2所示,電漿熔射頭20中,4個熔射槍25一體地支持於本體部21。The plasma spray head 20 includes a main body portion 21 and a plurality of spray guns 25. In this embodiment, as shown in FIGS. 1 and 2, in the plasma spray head 20, four spray guns 25 are integrally supported by the main body portion 21.

本體部21係將複數個熔射槍25一體支持之陶瓷等絕緣構件。如圖3所示,本體部21中形成有以能夠供複數個熔射槍25插通之方式構成之複數個貫通孔21a。於本實施形態中,4個貫通孔21a沿本體部21之長邊方向形成。本體部21之長邊方向之長度L1為155 mm,鄰接之貫通孔21a之中心間距離L2為35 mm。The main body portion 21 is an insulating member such as ceramics, which integrally supports the plurality of melting guns 25. As shown in FIG. 3, a plurality of through holes 21 a are formed in the main body portion 21 so as to be capable of being inserted into the plurality of melting guns 25. In this embodiment, four through holes 21 a are formed along the longitudinal direction of the main body portion 21. The length L1 in the longitudinal direction of the main body portion 21 is 155 mm, and the distance L2 between the centers of adjacent through holes 21a is 35 mm.

如圖1及圖4所示,本體部21之內部形成有供冷媒流經之冷媒流路21b。冷媒流路21b設置於複數個熔射槍25各者之周邊。自冷卻器單元40向冷媒流路21b供給冷媒。藉此,本體部21被冷卻,故能夠防止本體部21因電漿之熱而溫度變高。As shown in FIGS. 1 and 4, a refrigerant flow path 21 b through which a refrigerant flows is formed inside the main body portion 21. The refrigerant flow path 21 b is provided around each of the plurality of melting guns 25. The refrigerant is supplied from the cooler unit 40 to the refrigerant flow path 21b. Thereby, the body portion 21 is cooled, so that the temperature of the body portion 21 due to the heat of the plasma can be prevented from increasing.

本體部21例如係基於讀取至3D印表機之本體部用3D資料,利用3D印表機而成形。本體部3D資料包含形成於本體部21之內部之回旋流構造、冷媒流路21b、及供熔射槍25插入之複數個貫通孔21a之形狀、配置及尺寸資料。3D印表機基於本體部用3D資料,一體形成內部組裝有回旋流構造、冷媒流路21b、供熔射槍25插入之複數個貫通孔21a之本體部21,由此能夠以窄間距配置複數個熔射槍25,謀求裝置之小型化及硬體之零件個數之減少(減少O形環等)。The main body portion 21 is formed by using a 3D printer based on 3D data for the main body portion read to a 3D printer, for example. The 3D data of the main body part includes the shape, arrangement, and size data of the swirling flow structure formed inside the main body part 21, the refrigerant flow path 21b, and a plurality of through holes 21a through which the melting gun 25 is inserted. Based on the 3D data for the body part, the 3D printer integrally forms a body part 21 with a swirl flow structure, a refrigerant flow path 21b, and a plurality of through-holes 21a for the melting gun 25 to be inserted. Each shotgun 25 seeks to miniaturize the device and reduce the number of hardware parts (reducing O-rings, etc.).

又,本體部21亦可利用陶瓷3D燒成等3D燒結技術而成形,上述陶瓷3D燒成係使用光造形3D印表機製作包含陶瓷原料之成形物,使製作出之成形物燒結。In addition, the main body portion 21 may be formed by 3D sintering techniques such as ceramic 3D firing. The above-mentioned ceramic 3D firing uses a photoforming 3D printer to produce a molded article containing ceramic raw materials, and sinters the manufactured molded article.

熔射槍25係藉由自氣體供給部30供給之電漿產生氣體運送自給料器10供給之熔射材料之粉末R1,使用由直流電源50供給之電力使電漿產生氣體游離(解離)而產生電漿噴流P。然後,一面利用電漿噴流P之熱使熔射材料之粉末R1熔融,一面將其向基材之表面噴出。熔射槍25具有噴嘴26、旋轉流圓盤27及陽極部28。The spray gun 25 is used to generate powder from the plasma supplied from the gas supply unit 30 and transport the powder R1 of the molten shot material supplied from the feeder 10, and use the power supplied from the DC power source 50 to release (dissociate) the plasma generated gas. A plasma jet P is generated. Then, the powder R1 of the spray material is melted while using the heat of the plasma jet P to spray it toward the surface of the substrate. The spray gun 25 includes a nozzle 26, a rotary flow disk 27, and an anode portion 28.

噴嘴26係棒狀之環狀構件,其內部形成有運送熔射材料之粉末R1之流路26a。噴嘴26之流路26a與容器11內連通。熔射材料之粉末R1係藉由利用致動器12之動力使容器11振動,而自容器11被投入至噴嘴26內之流路26a。電漿產生氣體與熔射材料之粉末R1一起被供給至噴嘴26。電漿產生氣體係用以產生電漿之氣體,且亦作為於流路26a中運送熔射材料之粉末R1之載氣發揮功能。The nozzle 26 is a rod-shaped ring-shaped member, and a flow path 26a for conveying the powder R1 of the spray material is formed in the nozzle 26. The flow path 26 a of the nozzle 26 communicates with the inside of the container 11. The powder R1 of the shot material is caused to vibrate the container 11 by the power of the actuator 12, and the powder is injected into the flow path 26 a in the nozzle 26 from the container 11. The plasma-generating gas is supplied to the nozzle 26 together with the powder R1 of the spray material. The plasma generating gas system is used to generate plasma gas, and also functions as a carrier gas for transporting the powder R1 of the spray material in the flow path 26a.

噴嘴26貫通本體部21,其前端部26b突出至電漿產生空間U。於本實施形態中,噴嘴26藉由固定構件29a及緊固構件29b被固定於本體部21。熔射材料之粉末R1藉由電漿產生氣體被輸送至噴嘴26之前端部26b,與電漿產生氣體一起自前端部26b之開口26c被噴射至電漿產生空間U。噴嘴26係由金屬材料形成。噴嘴26連接於直流電源50,亦作為自直流電源50供給電流之電極(陰極)發揮功能。The nozzle 26 penetrates the main body part 21, and its front end part 26b protrudes to the plasma generation space U. In this embodiment, the nozzle 26 is fixed to the main body portion 21 by a fixing member 29a and a fastening member 29b. The powder R1 of the spray material is transported to the front end portion 26b of the nozzle 26 by the plasma generation gas, and is sprayed into the plasma generation space U together with the plasma generation gas from the opening 26c of the front end portion 26b. The nozzle 26 is formed of a metal material. The nozzle 26 is connected to the DC power source 50 and also functions as an electrode (cathode) that supplies a current from the DC power source 50.

旋轉流圓盤27插通於本體部21之貫通孔21a。旋轉流圓盤27由絕緣材料形成。旋轉流圓盤27之內部形成有向電漿產生空間U供給電漿產生氣體之氣體流路27a。自氣體供給部30向氣體流路27a供給電漿產生氣體。The rotary flow disk 27 is inserted into the through hole 21 a of the main body portion 21. The swirling flow disc 27 is formed of an insulating material. A gas flow path 27 a for supplying a plasma-generating gas to the plasma generating space U is formed inside the rotary flow disk 27. Plasma-generating gas is supplied from the gas supply unit 30 to the gas flow path 27a.

陽極部28自本體部21之下方插通於貫通孔21a。陽極部28由金屬材料形成。陽極部28連接於直流電源50,作為電極(陽極)發揮功能。The anode portion 28 is inserted into the through hole 21 a from below the main body portion 21. The anode portion 28 is formed of a metal material. The anode portion 28 is connected to the DC power source 50 and functions as an electrode (anode).

電漿產生空間U係主要由旋轉流圓盤27之內周部27b及陽極部28之上部28a劃定之空間。噴嘴26之前端部26b突出至電漿產生空間U。The plasma generation space U is a space mainly defined by the inner peripheral portion 27 b of the swirling flow disc 27 and the upper portion 28 a of the anode portion 28. The front end portion 26b of the nozzle 26 projects to the plasma generation space U.

氣體供給部30具有氣體供給源31、閥32、質量流量控制器33、配管34及配管35。電漿產生氣體由氣體供給源31供給,通過閥32及質量流量控制器33進行開閉及流量控制,且通過配管34被供給至噴嘴26內之流路26a。作為電漿產生氣體,可利用氬氣、氦氣、氮氣、氫氣、及組合該等各種氣體而成之氣體等。The gas supply unit 30 includes a gas supply source 31, a valve 32, a mass flow controller 33, a pipe 34, and a pipe 35. The plasma-generating gas is supplied from a gas supply source 31, is opened and closed, and controlled by a valve 32 and a mass flow controller 33, and is supplied to a flow path 26a in the nozzle 26 through a pipe 34. As the plasma-generating gas, argon, helium, nitrogen, hydrogen, and a combination of various gases can be used.

又,電漿產生氣體由氣體供給源31供給,通過閥32及質量流量控制器33進行開閉及流量控制,且通過配管35流經旋轉流圓盤27內部之氣體流路27a,自橫向被供給至電漿產生空間U。更具體而言,如圖1及圖5所示,被導入至電漿產生空間U之電漿產生氣體自旋轉流圓盤27之氣體流路27a於橫向變成回旋流而被供給至電漿產生空間U。由此,防止產生之電漿之擴散,電漿噴流P呈直線偏轉。即,產生軸芯與噴嘴26共通之電漿噴流P。再者,於本實施形態中,所謂「軸芯共通」係指噴嘴26之中心軸C與電漿噴流P之吹送方向之中心軸一致或於大致同一方向上一致。In addition, the plasma-generating gas is supplied from a gas supply source 31, and is opened and closed and the flow rate is controlled by a valve 32 and a mass flow controller 33. The gas flows through a gas flow path 27a inside the rotary flow disc 27 through a pipe 35, and is supplied from the lateral direction To the plasma generation space U. More specifically, as shown in FIGS. 1 and 5, the plasma generation gas introduced into the plasma generation space U is turned into a swirling flow from the gas flow path 27 a of the swirl flow disc 27 in the lateral direction and is supplied to the plasma generation. Space U. Thus, the generated plasma is prevented from being diffused, and the plasma jet P is deflected linearly. That is, the plasma jet P common to the shaft core and the nozzle 26 is generated. In addition, in the present embodiment, the "shaft core common" means that the central axis C of the nozzle 26 and the central axis of the blowing direction of the plasma jet P are coincident or substantially the same.

冷卻器單元40向冷媒流路21b供給冷卻水等冷媒。自冷卻器單元40供給之冷媒通過冷媒管41、冷媒流路21b及冷媒管42循環後返回至冷卻器單元40。於本實施形態中,形成於熔射槍25各者之周圍之冷媒流路21b相互並聯連接。再者,形成於熔射槍25各者之周圍之冷媒流路21b亦可相互串聯連接。The cooler unit 40 supplies a refrigerant such as cooling water to the refrigerant flow path 21b. The refrigerant supplied from the cooler unit 40 circulates through the refrigerant pipe 41, the refrigerant flow path 21b, and the refrigerant pipe 42 and returns to the cooler unit 40. In this embodiment, the refrigerant flow paths 21b formed around each of the melting guns 25 are connected in parallel to each other. Moreover, the refrigerant flow paths 21b formed around each of the melting guns 25 may be connected in series with each other.

直流電源50向噴嘴26之前端部26b與陽極部28之間供給特定電力(例如500 W~20 kW)。由此,於噴嘴26之前端部26b與陽極部28之間產生放電,於電漿產生空間U自噴嘴26噴射之電漿產生氣體被游離(分解),產生電漿。The DC power supply 50 supplies specific power (for example, 500 W to 20 kW) between the front end portion 26 b of the nozzle 26 and the anode portion 28. As a result, a discharge is generated between the end portion 26b and the anode portion 28 before the nozzle 26, and the plasma-generating gas ejected from the nozzle 26 in the plasma-generating space U is released (decomposed) to generate a plasma.

如以上所說明般,本發明之實施形態之電漿熔射裝置1具有本體部21將複數個熔射槍25一體支持之構造,故能夠將複數個熔射槍25之間隔配置為較窄。由此,能夠實現電漿熔射頭20之省空間化。As described above, the plasma spraying apparatus 1 according to the embodiment of the present invention has a structure in which the body 21 supports the plurality of spray guns 25 integrally. Therefore, the interval between the plurality of spray guns 25 can be arranged to be narrow. Thereby, space saving of the plasma spray head 20 can be achieved.

又,本發明之實施形態之電漿熔射裝置1中,由於本體部21之內部形成有供冷媒流經之冷媒流路21b,故能夠防止本體部21因電漿之熱而溫度變高。Moreover, in the plasma spraying apparatus 1 according to the embodiment of the present invention, a refrigerant flow path 21b through which a refrigerant flows is formed inside the main body portion 21, so that the temperature of the main body portion 21 due to the heat of the plasma can be prevented from increasing.

又,本發明之實施形態之電漿熔射裝置1中,對於複數個熔射槍25,自1個給料器10供給熔射材料之粉末R1,自1個氣體供給部30供給電漿產生氣體。又,自1個冷卻器單元40供給冷媒,自1個直流電源50供給電力。由此,能夠削減構成電漿熔射裝置1之零件個數。因此,能夠實現電漿熔射裝置1之省空間化。再者,亦可對應於複數個熔射槍25之各者而設置複數個給料器10、複數個氣體供給部30、複數個冷卻器單元40及複數個直流電源50。該情形時,能夠使各熔射槍25於不同條件下動作。In addition, in the plasma spraying apparatus 1 according to the embodiment of the present invention, for the plurality of spray guns 25, the powder R1 of the spraying material is supplied from one feeder 10, and the plasma is generated from a gas supply unit 30. . The refrigerant is supplied from one cooler unit 40 and power is supplied from one DC power source 50. As a result, the number of parts constituting the plasma spraying apparatus 1 can be reduced. Therefore, space saving of the plasma spraying apparatus 1 can be achieved. Further, a plurality of feeders 10, a plurality of gas supply units 30, a plurality of cooler units 40, and a plurality of DC power sources 50 may be provided corresponding to each of the plurality of melting guns 25. In this case, each of the spray guns 25 can be operated under different conditions.

其次,對圖1之電漿熔射裝置1之電漿熔射頭之另一例進行說明。圖6係表示圖1之電漿熔射裝置1之電漿熔射頭之另一例之剖視圖。Next, another example of the plasma spray head of the plasma spray device 1 in FIG. 1 will be described. FIG. 6 is a sectional view showing another example of a plasma spray head of the plasma spray device 1 of FIG. 1.

如圖6所示,電漿熔射頭120與圖2之電漿熔射頭20之不同點在於:本體部21之內部形成有氣體流路27a,該氣體流路27a係將電漿產生氣體之回旋流(以下稱作「回旋氣體」)供給至電漿產生空間U。As shown in FIG. 6, the plasma spray head 120 differs from the plasma spray head 20 in FIG. 2 in that a gas flow path 27 a is formed inside the main body part 21, and the gas flow path 27 a generates plasma gas. A swirling flow (hereinafter referred to as a "swirling gas") is supplied to the plasma generation space U.

圖6所示之電漿熔射頭120中,本體部21之內部形成有向電漿產生空間U供給回旋氣體之氣體流路27a,故能夠削減構成電漿熔射頭120之零件個數。又,能夠削減電漿熔射頭120之組裝步驟數。In the plasma spray head 120 shown in FIG. 6, a gas flow path 27 a for supplying a swirling gas to the plasma generation space U is formed inside the main body portion 21. Therefore, the number of parts constituting the plasma spray head 120 can be reduced. In addition, the number of steps for assembling the plasma spray head 120 can be reduced.

[效果] 對本發明之實施形態之電漿熔射裝置1所發揮之效果進行說明。[Effects] The effects exhibited by the plasma spraying apparatus 1 according to the embodiment of the present invention will be described.

首先,關於藉由使用本發明之實施形態之電漿熔射裝置1對提高生產性之貢獻進行說明。圖7係於長條物上進行成膜處理之情形時之電漿熔射頭之動作的說明圖。First, the contribution to improving productivity by using the plasma spraying apparatus 1 according to the embodiment of the present invention will be described. FIG. 7 is an explanatory diagram of the operation of a plasma spray head when a film is formed on a long object.

如圖7所示,基材W為長條物之情形時,一面使基材W向於本體部21一體支持有4個熔射槍25之電漿熔射頭20之短邊方向(圖中箭頭所示之方向)移動,一面利用電漿噴流P之熱使熔射材料之粉末R1熔融並且將其向基材W之表面噴出,從而於基材W之表面形成包含熔射材料之膜。As shown in FIG. 7, when the substrate W is an elongated object, the substrate W is directed toward the short side of the plasma spray head 20 having four spray guns 25 integrally supported on the body portion 21 (in the figure) The direction indicated by the arrow) moves, while using the heat of the plasma jet P to melt the powder R1 of the spray material and spray it toward the surface of the substrate W, thereby forming a film containing the spray material on the surface of the substrate W.

利用該方法,於長條物上形成包含熔射材料之膜時,能夠藉由使基材W於1方向(或單軸往返)移動而形成所需之膜。因此,能夠提高生產性。又,能夠簡化使基材W移動之機構。With this method, when a film including a thermal spray material is formed on a long object, a desired film can be formed by moving the substrate W in one direction (or uniaxial reciprocation). Therefore, productivity can be improved. In addition, the mechanism for moving the substrate W can be simplified.

再者,圖7之例中,舉例說明了一面使基材W移動一面進行電漿熔射之情形,但並不限於此,亦可代替基材W之移動,或與基材W之移動一起,一面使電漿熔射頭20移動一面進行電漿熔射。In addition, in the example of FIG. 7, the case where plasma spraying is performed while moving the substrate W is exemplified, but it is not limited to this, and may be used instead of or together with the movement of the substrate W. , While moving the plasma spray head 20 to perform plasma spray.

其次,說明退火處理對膜之密接性之影響。圖8係用以評估退火處理對膜之密接性之影響之評估系統的說明圖。Next, the influence of the annealing treatment on the adhesion of the film will be described. FIG. 8 is an explanatory diagram of an evaluation system for evaluating the influence of the annealing treatment on the adhesion of the film.

如圖8所示,於自4個熔射槍25A、25B、25C、25D中之熔射槍25B噴射添加5%氫(H2 )之Ar電漿(以下稱作「添加氫之電漿」),自熔射槍25C熔射Cu之狀態下,使基材W沿電漿熔射頭20之長邊方向,按照熔射槍25A之下方、熔射槍25B之下方、熔射槍25C之下方、熔射槍25D之下方之順序移動,向基材W之表面噴射添加氫之電漿並進行退火處理後,熔射Cu而形成Cu熔射膜。再者,圖8中,用箭頭表示基材W之移動方向。As shown in FIG. 8, an Ar plasma (hereinafter referred to as a “hydrogen-added plasma”) sprayed with 5% hydrogen (H 2 ) is sprayed from the spray guns 25B of the four spray guns 25A, 25B, 25C, and 25D. ), In the state of 25C from the spray gun 25C, the substrate W along the long side of the plasma spray head 20, under the spray gun 25A, below the spray gun 25B, the 25C The lower part and the lower part of the spray gun 25D are sequentially moved, and a plasma to which hydrogen is added is sprayed on the surface of the substrate W and annealed, and then Cu is sprayed to form a Cu spray film. In FIG. 8, the moving direction of the substrate W is indicated by arrows.

此時,將鄰接之熔射槍25之中心間距離L2設為35 mm,將基材W之表面與熔射槍25之下表面之距離L3設為50 mm左右,將基材W之移動速度設為數百mm/秒。又,作為基材W,使用Al、氧化鋁(Al2 O3 )、鐵(Fe)系金屬。At this time, the distance L2 between the centers of the adjacent shotguns 25 is set to 35 mm, the distance L3 between the surface of the substrate W and the lower surface of the shotgun 25 is set to about 50 mm, and the moving speed of the substrate W It is set to several hundred mm / second. As the base material W, Al, alumina (Al 2 O 3 ), and iron (Fe) -based metals are used.

又,為進行比較,於不自熔射槍25B噴射添加氫之電漿而自熔射槍25C熔射Cu之狀態下,使基材W沿電漿熔射頭20之長邊方向,按照熔射槍25A之下方、熔射槍25B之下方、熔射槍25C之下方、熔射槍25D之下方之順序移動,向基材W之表面不噴射添加氫之電漿(不進行退火處理)而熔射Cu以形成Cu熔射膜。For comparison, in a state where the plasma is not sprayed with hydrogen from the spray gun 25B and Cu is sprayed from the spray gun 25C, the base material W is aligned along the long side of the plasma spray head 20 according to the melting. Moving below the gun 25A, below the melting gun 25B, below the melting gun 25C, and below the melting gun 25D, the plasma is not sprayed with hydrogen added to the surface of the substrate W (without annealing treatment). Cu is sprayed to form a Cu spray film.

圖9係表示評估退火處理對膜之密接性之影響所得之結果的圖。圖9中表示出對8種試樣評估膜之密接性之試驗結果。膜之密接性評估試驗係依據JISK5400-8.5(JISD0202)而實施。圖9中,自左側之行依次表示有基材材質、基材之表面粗糙度、Cu熔射膜之厚度(Cu熔射厚度)、添加氫之電漿之有無、膜切斷時之膜狀態、及膠帶剝離時之膜狀態。FIG. 9 is a graph showing the results obtained by evaluating the influence of the annealing treatment on the adhesion of the film. Fig. 9 shows the test results of evaluating the adhesion of the film to eight kinds of samples. The adhesiveness evaluation test of the film was performed in accordance with JISK5400-8.5 (JISD0202). In Figure 9, the row from the left shows the substrate material, the surface roughness of the substrate, the thickness of the Cu spray film (Cu spray thickness), the presence or absence of hydrogen-added plasma, and the film state when the film is cut. And the state of the film when the tape is peeled.

如圖9所示,於添加氫之電漿處理後形成有Cu熔射膜之試樣(添加氫之電漿:有)中,不論基材之種類如何,膜切斷時並未觀察到「膜剝落」。又,於添加氫之電漿處理後形成有Cu熔射膜之試樣中,使用Al或Fe系金屬作為基材之情形時,膠帶剝離時並未觀察到「膜剝落」,但使用Al2 O3 作為基材之情形時,觀察到於100塊中之多數塊中殘留有膜。As shown in FIG. 9, in a sample in which a Cu spray film was formed after plasma treatment with hydrogen addition (plasma with hydrogen addition: yes), regardless of the type of the substrate, " Film peeling. " In addition, in the sample where a Cu spray film was formed after plasma treatment with hydrogen addition, when "Al" or "Fe" metal was used as the base material, "film peeling" was not observed when the tape was peeled off, but Al 2 was used. In the case of O 3 as a substrate, a film was observed to remain in most of the 100 pieces.

與之相對,於不進行添加氫之電漿處理而形成有Cu熔射膜之試樣(添加氫之電漿:無)中,不論基材之種類如何,膠帶剝離時於多數塊中觀察到「膜剝落」。具體而言,使用Al作為基材之情形時,於100塊中之多數塊中觀察到「膜剝落」。又,使用Al2 O3 作為基材之情形時,於全部100塊中觀察到「膜剝落」。又,使用Fe系金屬作為基材之情形時,於88塊中未觀察到「膜剝落」及「膜捲縮」(圖中用「○」表示),但於8塊中觀察到「膜捲縮」(圖中用「△」表示),於4塊中觀察到「膜剝落」(圖中用「×」表示)。In contrast, in a sample in which a Cu spray film was formed without plasma treatment with hydrogen addition (plasma with hydrogen addition: None), regardless of the type of the substrate, it was observed in many pieces when the tape was peeled off. "Membrane peeling." Specifically, in the case of using Al as the substrate, "film peeling" was observed in most of the 100 pieces. When Al 2 O 3 was used as the substrate, "film peeling" was observed in all 100 pieces. In the case of using an Fe-based metal as the base material, "film peeling" and "film curling" were not observed in 88 blocks (indicated by "○" in the figure), but "film rolls" were observed in 8 blocks. Shrinkage "(indicated by" △ "in the figure), and" film peeling "(indicated by" × "in the figure) was observed in 4 pieces.

認為藉由如此般於形成Cu熔射膜之前進行添加氫之電漿處理,能夠除去(還原)基材W之表面之氧化膜等,基材W與Cu熔射膜之間之密接性提高。It is considered that by performing the plasma treatment with hydrogen added before forming the Cu spray film, the oxide film and the like on the surface of the substrate W can be removed (reduced), and the adhesion between the substrate W and the Cu spray film is improved.

其次,說明退火處理後之經過時間對膜之密接性之影響。圖10係用以評估退火處理後之經過時間對膜之密接性之影響之評估系統的說明圖。Next, the influence of the elapsed time after the annealing treatment on the adhesiveness of the film will be described. FIG. 10 is an explanatory diagram of an evaluation system for evaluating the influence of the elapsed time after the annealing treatment on the adhesion of the film.

如圖10(a)所示,於自4個熔射槍25A、25B、25C、25D中之熔射槍25B噴射添加氫之電漿,自熔射槍25C熔射Cu之狀態下,使基材W沿電漿熔射頭20之長邊方向,按照熔射槍25A之下方、熔射槍25B之下方、熔射槍25C之下方、熔射槍25D之下方之順序移動,向基材W之表面噴射添加氫之電漿並進行退火處理後,熔射Cu而形成Cu熔射膜。再者,圖10(a)中,用箭頭表示基材W之移動方向。As shown in FIG. 10 (a), the hydrogen-added plasma is sprayed from the four spray guns 25A, 25B, 25C, and 25D, and the substrate is sprayed with Cu from the spray gun 25C. The material W moves along the long side direction of the plasma spray head 20 in the order below the spray gun 25A, below the spray gun 25B, below the spray gun 25C, and below the spray gun 25D in order, toward the substrate W. After spraying the plasma with hydrogen added on the surface and performing annealing treatment, Cu is sprayed to form a Cu spray film. Note that, in FIG. 10 (a), the moving direction of the substrate W is indicated by arrows.

熔射條件如下。The shot conditions are as follows.

<熔射槍25B> ・電力:6 kW左右 ・供給至流路26a之氣體:添加5%氫之Ar氣體 ・回旋氣體:添加5%氫之Ar氣體 ・熔射材料之粉末R1:無 <熔射槍25C> ・電力:6 kW左右 ・供給至流路26a之氣體:添加5%氫之Ar氣體 ・回旋氣體:添加5%氫之Ar氣體 ・熔射材料之粉末R1:Cu ・粉末R1之噴出量:數g/分鐘 <基材W> ・材質:Al ・移動速度:數百mm/秒 ・基材W與熔射槍25之下表面之距離L3:50 mm左右< Metal Shot Gun 25B > ・ Electricity: about 6 kW · Gas supplied to the flow path 26a: Ar gas with 5% hydrogen added · Swirling gas: Ar gas with 5% hydrogen added · Powder of spray material R1: None Shotgun 25C > ・ Electricity: about 6 kW ・ Gas supplied to the flow path 26a: Ar gas with 5% hydrogen added ・ Slewing gas: Ar gas with 5% hydrogen added ・ Powder of spray material R1: Cu ・ Powder of R1 Ejection amount: several g / min <Substrate W> ・ Material: Al ・ Movement speed: Hundreds of mm / second ・ Distance L3 between the substrate W and the lower surface of the spray gun 25: about 50 mm

又,如圖10(b)所示,於自4個熔射槍25A、25B、25C、25D中之熔射槍25B噴射添加氫之電漿,自熔射槍25D熔射Cu之狀態下,使基材W沿電漿熔射頭20之長邊方向,依序移動至熔射槍25A之下方、熔射槍25B之下方、熔射槍25C之下方、熔射槍25D之下方,向基材W之表面噴射添加氫之電漿並進行退火處理後,熔射Cu而形成Cu熔射膜。再者,圖10(b)中,用箭頭表示基材W之移動方向。又,熔射條件除了代替熔射槍25C而自熔射槍25D熔射Cu之方面以外與上述相同。即,自熔射槍25D熔射Cu之條件與上述之自熔射槍25C熔射Cu之條件相同。In addition, as shown in FIG. 10 (b), in a state where the plasma to which hydrogen is added is sprayed from the spray guns 25B of the four spray guns 25A, 25B, 25C, and 25D, and the Cu is sprayed from the spray gun 25D, The substrate W is sequentially moved along the long side of the plasma spray head 20 below the spray gun 25A, below the spray gun 25B, below the spray gun 25C, and below the spray gun 25D toward the base. After the surface of the material W is sprayed with hydrogen-added plasma and annealed, Cu is sprayed to form a Cu spray film. In FIG. 10 (b), the moving direction of the substrate W is indicated by arrows. In addition, the spraying conditions are the same as the above except that the Cu is sprayed from the spray gun 25D instead of the spray gun 25C. That is, the conditions for the self-injection gun 25D to inject Cu are the same as the conditions for the above-mentioned self-injection gun 25C to inject Cu.

又,鄰接之熔射槍25之中心間距離L2設為35 mm。即,於自熔射槍25B噴射添加氫之電漿,自熔射槍25C熔射Cu之情形時,向基材W噴射添加氫之電漿後,0.1秒後Cu被熔射。又,於自熔射槍25B噴射添加氫之電漿,自熔射槍25D熔射Cu之情形時,向基材W噴射添加氫之電漿後,0.2秒後Cu被熔射。The distance L2 between the centers of the adjacent melting shot guns 25 is set to 35 mm. That is, in the case where the plasma to which hydrogen is added is sprayed from the spray gun 25B and Cu is sprayed from the gun 25C, Cu is sprayed after 0.1 seconds after the plasma to which hydrogen is added is sprayed onto the substrate W. In addition, when the plasma to which hydrogen is added is sprayed from the self-spraying gun 25B and the plasma is to be sputtered from 25D by the self-spraying gun 25D, Cu is sprayed after 0.2 seconds after the plasma to which hydrogen is added is sprayed onto the substrate W.

圖11係表示評估退火處理後之時間對膜之密接性之影響所得之結果的圖。圖11中示出了對3種試樣評估膜之密接性之試驗結果。膜之密接性評估試驗係藉由觀察以25 g負重之鑷子刮擦Cu熔射膜時之膜之剝離狀態的試驗(刮痕試驗)而實施。圖11中,自左側之行依次表示有噴射添加氫之電漿後經過15秒後、0.2秒後、0.1秒後形成Cu熔射膜之試樣之膜狀態(上段)及刮痕試驗結果(下段)。FIG. 11 is a graph showing the results obtained by evaluating the effect of the time after the annealing treatment on the adhesiveness of the film. FIG. 11 shows the test results of evaluating the adhesion of the film to three types of samples. The film adhesion evaluation test was carried out by observing the peeling state of the film (scratch test) when the Cu heat-sprayed film was scratched with a tweezer with a weight of 25 g. In Fig. 11, the row from the left shows the film state (upper stage) and the scratch test result of the sample forming the Cu spray film after 15 seconds, 0.2 seconds, and 0.1 seconds after the plasma with the addition of hydrogen was sprayed. Lower paragraph).

如圖11之上段所示,於噴射添加氫之電漿後經過0.2秒後形成Cu溶射膜之試樣、及噴射添加氫之電漿後經過0.1秒後形成Cu熔射膜之試樣中,觀察到於基材W之表面成膜有Cu熔射膜。另一方面,於噴射添加氫之電漿後經過15秒後形成Cu熔射膜之試樣中,觀察到於基材W之表面未形成Cu熔射膜之部分較多。即,就於基材W之表面易形成Cu熔射膜之觀點而言,較佳為於噴射添加氫之電漿後經過0.2秒以下熔射Cu,尤佳為於噴射添加氫之電漿後經過0.1秒以下熔射Cu。As shown in the upper part of FIG. 11, among the samples that form a Cu-emission film after 0.2 seconds after spraying the plasma with hydrogen addition, and the samples that form a Cu-spray film after 0.1 seconds after spraying the plasma with hydrogen added, A Cu spray film was observed on the surface of the substrate W. On the other hand, in the sample in which a Cu spray film was formed 15 seconds after the plasma to which hydrogen was added was sprayed, it was observed that a large portion of the Cu spray film was not formed on the surface of the substrate W. That is, from the viewpoint of easily forming a Cu spray film on the surface of the substrate W, it is preferred that Cu be sprayed for 0.2 seconds or less after spraying the plasma to which hydrogen is added, and it is more preferable to spray the plasma to which hydrogen is added. Cu was shot by elapse of 0.1 seconds or less.

如圖11之下段所示,於噴射添加氫之電漿後經過0.1秒後熔射Cu之試樣中,藉由刮痕試驗觀察到Cu熔射膜不易剝離。又,於噴射添加氫之電漿後經過0.2秒後熔射Cu之試樣中,刮痕試驗之結果為觀察到Cu熔射膜之一部分剝離。另一方面,於噴射添加氫之電漿後經過15秒後熔射Cu之試樣中,刮痕試驗之結果為觀察到Cu熔射膜易剝離。即,就提高Cu相對於基材W之密接性之觀點而言,較佳為於噴射添加氫之電漿後經過0.2秒以下熔射Cu,尤佳為於噴射添加氫之電漿後經過0.1秒以下熔射Cu。As shown in the lower part of FIG. 11, in a sample in which Cu was spray-injected after 0.1 seconds elapsed after the plasma to which hydrogen was added was sprayed, it was observed that the Cu-sprayed film was not easily peeled by a scratch test. In addition, in a sample in which Cu was spray-injected 0.2 seconds after the plasma to which hydrogen was added was sprayed, a part of the Cu-sprayed film was observed to be peeled off as a result of a scratch test. On the other hand, in a sample in which Cu was spray-injected 15 seconds after the plasma to which hydrogen was added was sprayed, as a result of a scratch test, the Cu-sprayed film was easily peeled. That is, from the viewpoint of improving the adhesiveness of Cu with respect to the substrate W, it is preferred that the Cu be sprayed for 0.2 seconds or less after spraying the plasma with hydrogen added, and more preferably 0.1 for the plasma sprayed with hydrogen added. Cu is sprayed below seconds.

如上所述,本發明之實施形態之電漿熔射裝置1中,能夠將複數個熔射槍25之間隔配置為較窄,故能夠於噴射添加氫之電漿後短時間內藉由電漿噴流P之熱使熔射材料之粉末R1熔融並且將其向基材W之表面噴射。因此,能夠形成對於基材W之密接性較高之Cu熔射膜。As described above, in the plasma spraying apparatus 1 according to the embodiment of the present invention, the interval between the plurality of spray guns 25 can be arranged to be relatively narrow, so that the plasma can be sprayed by the plasma in a short time after spraying the plasma to which hydrogen is added The heat of the jet P melts the powder R1 of the shot material and sprays it toward the surface of the substrate W. Therefore, it is possible to form a Cu spray film having high adhesion to the substrate W.

以上,對將熔射槍25之間隔配置為較窄之情形時之效果進行了說明。再者,存在根據熔射材料或熔射條件不同,宜將所使用之熔射槍25之間隔擴大之情形。例如,存在因鄰接之熔射槍25之電漿熔射而產生熱干渉,導致熔射膜之特性降低之情形。該情形時,亦可使用不鄰接之熔射槍25。The effect of the case where the interval between the shotguns 25 is narrow has been described above. Furthermore, there are cases where it is desirable to increase the interval of the spray gun 25 to be used depending on the shot material or the shot conditions. For example, there is a case where thermal drying occurs due to plasma spraying of the adjacent spray gun 25 and the characteristics of the spray film may decrease. In this case, a non-adjacent melting gun 25 may be used.

以上,對用以實施本發明之形態進行了說明,但上述內容並不限定發明之內容,能夠於本發明之範圍內進行各種變化及改良。As mentioned above, the form for implementing this invention was demonstrated, However, the said content does not limit the content of this invention, Various changes and improvements are possible within the scope of this invention.

1‧‧‧電漿熔射裝置1‧‧‧ Plasma spraying device

10‧‧‧給料器10‧‧‧Feeder

11‧‧‧容器11‧‧‧ container

12‧‧‧致動器12‧‧‧Actuator

20‧‧‧電漿熔射頭20‧‧‧ Plasma spray head

21‧‧‧本體部21‧‧‧Body

21a‧‧‧貫通孔21a‧‧‧through hole

21b‧‧‧冷媒流路21b‧‧‧Refrigerant flow path

25‧‧‧熔射槍25‧‧‧ Melt Shot Gun

25A‧‧‧熔射槍25A‧‧‧ Melt Shot Gun

25B‧‧‧熔射槍25B‧‧‧ Melt Shot Gun

25C‧‧‧熔射槍25C‧‧‧ Melt Shot Gun

25D‧‧‧熔射槍25D‧‧‧ Melt Shot Gun

26‧‧‧噴嘴26‧‧‧Nozzle

26a‧‧‧流路26a‧‧‧flow

26b‧‧‧前端部26b‧‧‧Front end

26c‧‧‧開口26c‧‧‧ opening

27‧‧‧旋轉流圓盤27‧‧‧ Rotating Stream Disc

27a‧‧‧氣體流路27a‧‧‧Gas flow path

27b‧‧‧內周部27b‧‧‧Inner periphery

28‧‧‧陽極部28‧‧‧Anode

28a‧‧‧上部28a‧‧‧upper

29a‧‧‧固定構件29a‧‧‧Fixed member

29b‧‧‧緊固構件29b‧‧‧fastening member

30‧‧‧氣體供給部30‧‧‧Gas Supply Department

31‧‧‧氣體供給源31‧‧‧Gas supply source

32‧‧‧閥32‧‧‧ Valve

33‧‧‧質量流量控制器33‧‧‧mass flow controller

34‧‧‧配管34‧‧‧Piping

35‧‧‧配管35‧‧‧Piping

40‧‧‧冷卻器單元40‧‧‧cooler unit

41‧‧‧冷媒管41‧‧‧Refrigerant tube

42‧‧‧冷媒管42‧‧‧Refrigerant tube

50‧‧‧直流電源50‧‧‧DC Power

C‧‧‧中心軸C‧‧‧center axis

L1‧‧‧長度L1‧‧‧ length

L2‧‧‧中心間距離L2‧‧‧ Center distance

L3‧‧‧距離L3‧‧‧ Distance

P‧‧‧電漿噴流P‧‧‧ Plasma Jet

R1‧‧‧熔射材料之粉末R1‧‧‧Powder of spraying material

U‧‧‧電漿產生空間U‧‧‧ Plasma generation space

W‧‧‧基材W‧‧‧ substrate

圖1係本發明之實施形態之電漿熔射裝置之概略圖。 圖2係表示圖1之電漿熔射裝置之電漿熔射頭之一例的立體圖。 圖3係用以說明圖2之電漿熔射頭之本體部之圖。 圖4係通過圖2之電漿熔射頭之噴嘴之中心軸之縱向剖視圖。 圖5係圖2之電漿熔射頭之橫向剖視圖。 圖6係表示圖1之電漿熔射裝置之電漿熔射頭之另一例之剖視圖。 圖7係於長條物上進行成膜處理之情形時之電漿熔射頭之動作的說明圖。 圖8係用以評估退火處理對膜之密接性之影響之評估系統的說明圖。 圖9係表示評估退火處理對膜之密接性之影響所得之結果的圖。 圖10(a)、(b)係用以評估退火處理後之經過時間對膜之密接性之影響之評估系統的說明圖。 圖11係表示評估退火處理後之經過時間對膜之密接性之影響所得之結果的圖。FIG. 1 is a schematic diagram of a plasma spraying apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view showing an example of a plasma spray head of the plasma spray device of FIG. 1. FIG. FIG. 3 is a diagram for explaining a main body portion of the plasma spray head of FIG. 2. FIG. 4 is a longitudinal sectional view of the central axis of the nozzle of the plasma spray head of FIG. 2. 5 is a cross-sectional view of the plasma spray head of FIG. 2. FIG. 6 is a sectional view showing another example of a plasma spray head of the plasma spray device of FIG. 1. FIG. FIG. 7 is an explanatory diagram of the operation of a plasma spray head when a film is formed on a long object. FIG. 8 is an explanatory diagram of an evaluation system for evaluating the influence of the annealing treatment on the adhesion of the film. FIG. 9 is a graph showing the results obtained by evaluating the influence of the annealing treatment on the adhesion of the film. 10 (a) and 10 (b) are explanatory diagrams of an evaluation system for evaluating the influence of the elapsed time after the annealing treatment on the adhesion of the film. FIG. 11 is a graph showing the results obtained by evaluating the effect of the elapsed time after the annealing treatment on the adhesiveness of the film.

Claims (10)

一種電漿熔射頭,其係利用電漿使熔射材料之粉末熔融,藉由已熔融之粉末於被對象物上成膜者,且具有: 複數個熔射槍,其等分別包含噴嘴及電漿產生部,該噴嘴係利用電漿產生氣體運送上述熔射材料之粉末,並將該粉末自前端部之開口噴射,該電漿產生部係藉由直流電源輸出之電力將上述噴嘴所噴射之上述電漿產生氣體分解,產生軸芯與上述噴嘴共通之電漿;以及 本體部,其將上述複數個熔射槍一體支持,且於內部包含供冷媒流經之冷媒流路。The utility model relates to a plasma spray head, which uses a plasma to melt powder of a spray material, and uses the melted powder to form a film on an object, and has: a plurality of spray guns, each of which includes a nozzle and a In the plasma generating part, the nozzle uses the gas generated by the plasma to transport the powder of the spray material, and sprays the powder from the opening in the front end. The plasma generating part sprays the nozzle through the power output by the DC power supply. The above-mentioned plasma generates gas decomposition to generate a plasma common to the shaft core and the nozzle; and a body part which integrally supports the plurality of melting shot guns, and contains a refrigerant flow path through which the refrigerant flows. 如請求項1之電漿熔射頭,其中 上述本體部具有以能夠供上述複數個熔射槍插通之方式構成之複數個貫通孔。For example, the plasma spray head of claim 1, wherein the main body portion has a plurality of through holes configured so that the plurality of spray guns can be inserted. 如請求項2之電漿熔射頭,其中 鄰接之上述貫通孔之中心間距離為70 mm以下。For example, the plasma spray head of claim 2, wherein the distance between the centers of adjacent through holes is 70 mm or less. 如請求項1至3中任一項之電漿熔射頭,其具有氣體流路, 該氣體流路向被噴射上述電漿產生氣體之電漿產生空間供給形成回旋流之氣體。The plasma spray head according to any one of claims 1 to 3, which has a gas flow path, and the gas flow path supplies a gas forming a swirling flow to a plasma generation space where the plasma generation gas is sprayed. 如請求項4之電漿熔射頭,其中 上述氣體流路形成於上述本體部之內部。The plasma spray head according to claim 4, wherein the gas flow path is formed inside the body portion. 如請求項1至3中任一項之電漿熔射頭,其中 上述本體部係基於讀取至3D印表機之本體部用3D資料,利用3D印表機或3D燒結技術而成形。For example, the plasma spray head according to any one of claims 1 to 3, wherein the body portion is formed by using a 3D printer or a 3D sintering technology based on the 3D data read from the body portion of the 3D printer. 一種電漿熔射裝置,其具備: 如請求項1至6中任一項之電漿熔射頭;及 給料器,其向上述電漿熔射頭供給上述熔射材料之粉末。A plasma spraying device includes: a plasma spraying head according to any one of claims 1 to 6; and a feeder that supplies the powder of the spraying material to the plasma spraying head. 一種電漿熔射方法,其係使用電漿熔射頭於被對象物上成膜者,該電漿熔射頭具有: 複數個熔射槍,其等分別包含噴嘴及電漿產生部,該噴嘴係利用電漿產生氣體運送熔射材料之粉末,並將該粉末自前端部之開口噴射,該電漿產生部係藉由直流電源輸出之電力將上述噴嘴所噴射之上述電漿產生氣體分解,產生軸芯與上述噴嘴共通之電漿;以及 本體部,其將上述複數個熔射槍一體支持,且於內部包含供冷媒流經之冷媒流路;且該電漿熔射方法具有如下步驟: 自上述複數個熔射槍中之一個熔射槍對上述被對象物不噴射上述熔射材料之粉末而噴射上述電漿;及 自上述複數個熔射槍中之與上述一個熔射槍不同之熔射槍噴射上述熔射材料之粉末及上述電漿。A plasma spraying method uses a plasma spraying head to form a film on an object. The plasma spraying head includes: a plurality of spraying guns, each of which includes a nozzle and a plasma generating section; The nozzle uses the gas generated by the plasma to transport the powder of the spray material and sprays the powder from the opening at the front end. The plasma generation unit decomposes the plasma generated gas sprayed by the nozzle by the power output by the DC power supply. To generate a plasma common to the shaft core and the nozzle; and a main body unit that integrally supports the plurality of melting guns and contains a refrigerant flow path through which the refrigerant flows; and the plasma melting method has the following steps: : One of the plurality of spray guns sprays the plasma without spraying the powder of the spray material on the object; and the spray gun is different from the one of the plurality of spray guns The spray gun sprays the powder of the spray material and the plasma. 如請求項8之電漿熔射方法,其中 於噴射上述電漿之步驟後,進行噴射上述熔射材料之粉末及上述電漿之步驟。The plasma spraying method according to claim 8, wherein after the step of spraying the plasma, the step of spraying the powder of the spray material and the plasma is performed. 如請求項8或9之電漿熔射方法,其中 噴射上述電漿之步驟中使用之熔射槍係與噴射上述熔射材料之粉末及上述電漿之步驟中使用之熔射槍鄰接配置者。The plasma spraying method of claim 8 or 9, wherein the spray gun used in the step of spraying the above-mentioned plasma is arranged adjacent to the spray gun used in the step of spraying the powder of the above-mentioned spray material and the step of the above-mentioned plasma. .
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JP6895813B2 (en) 2021-06-30
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JP2018202361A (en) 2018-12-27
KR102550835B1 (en) 2023-07-03
CN109023215A (en) 2018-12-18

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