TW201904107A - Method of forming a seal, method of manufacturing a sealed unit, sealing unit, and apparatus for forming a seal - Google Patents

Method of forming a seal, method of manufacturing a sealed unit, sealing unit, and apparatus for forming a seal Download PDF

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Publication number
TW201904107A
TW201904107A TW107113307A TW107113307A TW201904107A TW 201904107 A TW201904107 A TW 201904107A TW 107113307 A TW107113307 A TW 107113307A TW 107113307 A TW107113307 A TW 107113307A TW 201904107 A TW201904107 A TW 201904107A
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Taiwan
Prior art keywords
panel
sealing
path
sealing material
along
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TW107113307A
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Chinese (zh)
Inventor
亞當 諾史 布魯特
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英商萬佳雷射有限公司
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Publication of TW201904107A publication Critical patent/TW201904107A/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20Bonding
    • B23K26/206Laser sealing
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • C03C27/08Joining glass to glass by processes other than fusing with the aid of intervening metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80Constructional details
    • H10K10/88Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/88Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

Methods and apparatus for forming a seal are disclosed. In one arrangement, a first panel and a second panel are provided. A sealer material is present between the first panel and the second panel. The sealer material is in contact with the first panel and the second panel along all of a seal path. A first heating process is performed to heat metal particles derived from the sealer material along the seal path to cause fusing of the metal particles along the seal path. A second heating process is performed, separately from the first heating process, to provide a continuous weld along the seal path between the fused metal particles and the first panel and between the fused metal particles and the second panel, thereby generating a seal along the seal path.

Description

形成密封之方法、製造密封單元之方法、密封單元及形成密封之設備Method for forming seal, method for manufacturing seal unit, seal unit, and device for forming seal

本發明係關於用於在面板之間形成密封、尤其用於製造密封單元之方法及設備,該等密封單元為(例如)真空絕緣玻璃總成或包含含有對大氣濕度敏感之電子器件(例如OLED顯示裝置、OLED照明、智慧窗或基於鈣鈦礦及/或有機物之光伏打系統)之面板之總成。The invention relates to a method and an apparatus for forming a seal between panels, in particular for manufacturing a sealed unit, such as a vacuum insulation glass assembly or containing electronic devices (such as OLEDs) that are sensitive to atmospheric humidity Assembly of display device, OLED lighting, smart window or photovoltaic system based on perovskite and / or organic matter).

玻璃料密封係已知用於在透明面板之間提供密封區域之技術。將玻璃料沈積在面板之間之閉合環路跡線中,並加熱以沿閉合環路跡線之線形成玻璃焊接,藉此提供密封區域。可使用爐以提供加熱。倘若密封區域形成大物件(例如大窗單元或大顯示板)之一部分,則此方法係困難的,此乃因需要提供相應較大的爐。此外,由於欲處理之整個物件需要在爐內,故對高溫敏感之組件(例如顯示板中之精細電子器件)不能存在,此可限制可處理物件之範圍。 雷射玻璃料密封係替代技術,其中使用雷射將熱局部施加至玻璃料。此可避免將整個物件置於爐內之需要且可避免過度加熱精細組件,只要其位置離玻璃料足夠遠即可。然而,需要施加至玻璃料用於焊接製程之溫度仍相對較高(通常400-500℃),且可仍需要藉由爐進行顯著預熱(例如較最終溫度低大約100℃內)。局部施加此等溫度可由於不均勻熱膨脹及收縮而生成顯著熱應力。已發現此等應力限制可有效使用雷射玻璃料密封之情況之範圍及/或降低製造產率、可靠性及/或產品壽命。 EP 2 124 254 A1揭示密封壓電元件之密封方法。該方法使用包含金屬粉末及有機溶劑之特別調配之金屬膏糊。密封方法按順序包含以下步驟:(a)將金屬膏糊施加至基底構件或蓋構件;(b)乾燥金屬膏糊並在80℃至300℃下燒結,以形成金屬粉末燒結體;及(c)將蓋構件佈置於基底構件上,其中金屬粉末燒結體在其間,及藉由自一個方向或自兩個方向施加壓力使基底構件與蓋構件黏合,同時加熱至少金屬粉末燒結體。壓力及熱使金屬粉末燒結體密度增加,以形成緻密的黏合部件。因此,EP 2 124 254 A1之方法在黏合製程期間再次需要相對高之溫度,此可將其使用限制為不存在對高溫敏感之組件的情形中。稠化期間所需之壓力可誘導顯著局部應力,此可限制可使用黏合之情況之範圍。最後,需要細心設計金屬膏糊以達成期望之功能。Frit sealing is a technique known for providing a sealed area between transparent panels. The frit is deposited in closed loop traces between the panels and heated to form a glass weld along the lines of the closed loop traces, thereby providing a sealed area. An oven may be used to provide heating. This method is difficult if the sealed area forms part of a large object, such as a large window unit or a large display panel, because a correspondingly larger furnace is required. In addition, since the entire object to be processed needs to be in the furnace, high temperature sensitive components (such as fine electronic devices in display panels) cannot exist, which can limit the range of objects that can be processed. Laser frit sealing is an alternative technique where laser is used to locally apply heat to the frit. This avoids the need to place the entire object in the furnace and avoids overheating the delicate components as long as they are located far enough from the glass frit. However, the temperature required to be applied to the frit for the welding process is still relatively high (typically 400-500 ° C), and significant preheating by the furnace (eg, within about 100 ° C below the final temperature) may still be required. Local application of these temperatures can generate significant thermal stresses due to uneven thermal expansion and contraction. These stresses have been found to limit the range of situations where laser frit sealing can be effectively used and / or reduce manufacturing yield, reliability, and / or product life. EP 2 124 254 A1 discloses a sealing method for sealing a piezoelectric element. This method uses a specially formulated metal paste containing metal powder and an organic solvent. The sealing method includes the following steps in order: (a) applying a metal paste to a base member or a cover member; (b) drying the metal paste and sintering at 80 ° C to 300 ° C to form a metal powder sintered body; and (c) ) The cover member is arranged on the base member, with the metal powder sintered body therebetween, and the base member and the cover member are adhered by applying pressure from one direction or two directions, while heating at least the metal powder sintered body. Pressure and heat increase the density of the sintered body of the metal powder to form a dense bonded part. Therefore, the method of EP 2 124 254 A1 again requires a relatively high temperature during the bonding process, which can limit its use to the absence of high temperature sensitive components. The pressure required during thickening can induce significant local stresses, which can limit the range of situations where bonding can be used. Finally, the metal paste needs to be carefully designed to achieve the desired function.

本發明之目標係提供形成密封及/或製造密封單元之方法及設備,其至少部分地解決先前技術之一或多個問題。 根據本發明之態樣提供形成密封之方法,該方法包含:提供第一面板及第二面板,其中密封材料存在於第一面板與第二面板之間,密封材料沿整個密封路徑與第一面板及第二面板接觸,實施第一加熱製程以沿密封路徑加熱衍生自密封材料之金屬粒子,同時密封材料沿整個密封路徑與第一面板及第二面板接觸,以使金屬粒子沿密封路徑熔融;及與第一加熱製程分開實施第二加熱製程,以沿密封路徑在熔融之金屬粒子與第一面板之間及熔融之金屬粒子與第二面板之間提供連續銲縫,藉此沿密封路徑生成密封,其中第二加熱製程係利用雷射實施。因此,提供如下方法:其中含有金屬粒子之密封材料位於兩個面板之間,以便沿整個密封路徑接觸兩個面板。此可容易地達成,此乃因金屬粒子可在基質內彼此流過(與固體金屬中之金屬原子相比)。藉由在由此提供密封材料後使金屬粒子熔融可沿密封路徑產生連續之金屬層。然後可將連續之金屬層焊接至面板以沿密封路徑產生密封。此製程可利用遠低於使用玻璃料之等效製程之加熱程度實施,藉此減少對面板及/或面板之間欲密封之鄰近功能組件之熱應力,並避免將面板置於爐內之任何需要。密封之滲透率通常低於諸如熱固性塑膠邊緣密封之替代物,藉此提供對氧/濕氣侵入敏感之產品(例如OLED照明及第3代PV應用)之更長壽命,而不需要通常與產品之功能元件不相容之玻璃料相關之高溫處理。 僅在將兩個面板放在一起後使金屬粒子熔融才可在熔融之金屬粒子與第一及第二面板之間產生光學上準確之界面,藉此使得可在第二加熱製程沿密封進行高效雷射焊接。此方法避免對困難且耗時之玻璃拋光技術之需要,否則可能需要該玻璃拋光技術使得藉助面板雷射焊接有效。在實施例中,藉由第一加熱製程沿密封路徑熔融金屬粒子使得沿密封路徑介於熔融之金屬粒子與第一面板或第二面板之間之最大空隙具有小於5微米、視情況小於2微米、視情況小於1微米、視情況小於500 nm、視情況小於300 nm、視情況小於150 nm之最大尺寸。 在實施例中,焊接係藉由使用經構形以提供具有小於50 ps之脈衝長度之脈衝之雷射進行雷射焊接來實施。此方法容許可靠地並以極低熱負載達成焊接。 在實施例中,方法包含:將密封材料沈積在第一面板上;加熱密封材料以去除密封材料之一部分,藉此增加密封材料之剛性;及移動第一面板及第二面板中之任一者或兩者,以使得第一面板及第二面板呈面對構形,其中密封材料沿整個密封路徑與第一面板及第二面板接觸。此方法容許密封材料在相對低之黏度狀態下時高效地沈積。隨後加熱使密封材料之剛性增加至適於藉由第一面板及第二面板抵抗壓縮至最佳程度之水凖(即容許變形以補償面板中之瑕疵或未對準而不需要過度夾緊力,而同時並不易變至使得密封材料在面板之間擠壓時過度擴散)。 在替代態樣中提供用於形成密封之設備,其包含:沈積單元,其經構形以沿密封路徑將密封材料沈積在第一面板上;面板處置器,其經構形以移動第一面板及第二面板中之任一者或兩者,以使得第一面板及第二面板呈面對構形,其中密封材料沿整個密封路徑與第一面板及第二面板接觸;第一加熱單元,其經構形以沿密封路徑加熱衍生自密封材料之金屬粒子,同時密封材料沿整個密封路徑與第一面板及第二面板接觸,以使金屬粒子沿密封路徑熔融;及第二加熱單元,其經構形以沿密封路徑在熔融之金屬粒子與第一面板之間及熔融之金屬粒子與第二面板之間提供連續銲縫,藉此沿密封路徑生成密封,其中第二加熱單元包含經構形以提供連續銲縫之雷射。It is an object of the present invention to provide a method and apparatus for forming a seal and / or manufacturing a seal unit, which at least partially solve one or more of the problems of the prior art. According to an aspect of the present invention, a method for forming a seal is provided. The method includes: providing a first panel and a second panel, wherein a sealing material is present between the first panel and the second panel, and the sealing material and the first panel are along the entire sealing path. In contact with the second panel, a first heating process is performed to heat the metal particles derived from the sealing material along the sealing path, while the sealing material is in contact with the first panel and the second panel along the entire sealing path, so that the metal particles are melted along the sealing path; And implement a second heating process separately from the first heating process to provide a continuous weld along the sealing path between the molten metal particles and the first panel and between the molten metal particles and the second panel, thereby generating along the sealing path Sealed, where the second heating process is performed using laser. Therefore, a method is provided in which a sealing material containing metal particles is located between two panels so as to contact the two panels along the entire sealing path. This is easily achieved because metal particles can flow through each other in the matrix (compared to metal atoms in a solid metal). A continuous metal layer can be produced along the sealing path by melting the metal particles after the sealing material is thus provided. A continuous metal layer can then be welded to the panel to create a seal along the seal path. This process can be implemented with far less heating than the equivalent process using glass frit, thereby reducing the thermal stress on the panel and / or adjacent functional components to be sealed between the panels, and avoiding any panel placed in the furnace need. Seals typically have lower permeability than alternatives such as thermoset plastic edge seals, thereby providing longer life for products sensitive to oxygen / moisture intrusion (e.g. OLED lighting and 3rd generation PV applications) without the need for Functional components are not compatible with high temperature processing related to glass frit. Only after the two panels are brought together and the metal particles are fused can an optically accurate interface be created between the molten metal particles and the first and second panels, thereby enabling efficient sealing along the second heating process Laser welding. This method avoids the need for difficult and time-consuming glass polishing techniques, which may otherwise be required to make panel laser welding effective. In an embodiment, the first heating process melts the metal particles along the sealing path so that the maximum gap between the molten metal particles and the first panel or the second panel along the sealing path is less than 5 microns, and optionally less than 2 microns. The maximum size of less than 1 micron as the case, less than 500 nm as the case, less than 300 nm as the case, and less than 150 nm as the case. In an embodiment, the welding is performed by laser welding using a laser configured to provide a pulse having a pulse length of less than 50 ps. This method allows welding to be achieved reliably and with very low thermal loads. In an embodiment, the method includes: depositing a sealing material on the first panel; heating the sealing material to remove a portion of the sealing material, thereby increasing the rigidity of the sealing material; and moving any one of the first panel and the second panel Or both, so that the first panel and the second panel have a facing configuration, wherein the sealing material contacts the first panel and the second panel along the entire sealing path. This method allows the sealing material to be efficiently deposited in a relatively low viscosity state. Subsequent heating increases the rigidity of the sealing material to a level suitable for resisting compression to the optimum level by the first and second panels (i.e. allowing deformation to compensate for defects or misalignment in the panel without excessive clamping force) (At the same time, it is not easy to change so that the sealing material will spread excessively when squeezed between the panels). In an alternative aspect, an apparatus for forming a seal is provided, comprising: a deposition unit configured to deposit a sealing material along a sealing path on a first panel; and a panel handler configured to move the first panel And either or both of the second panel so that the first and second panels have a facing configuration, wherein the sealing material contacts the first and second panels along the entire sealing path; the first heating unit, It is configured to heat metal particles derived from the sealing material along the sealing path, while the sealing material contacts the first panel and the second panel along the entire sealing path to melt the metal particles along the sealing path; and a second heating unit, which It is configured to provide a continuous weld between the molten metal particles and the first panel and between the molten metal particles and the second panel along the sealing path, thereby generating a seal along the sealing path, wherein the second heating unit contains the warp Shaped to provide continuous laser welding.

實施例係關於在第一面板1與第二面板2之間形成密封。密封可用於製造密封單元5。密封單元可形成(例如)真空絕緣玻璃總成、OLED顯示裝置、OLED照明、智慧窗或基於鈣鈦礦及有機物之光伏打系統之部件。 在圖1及2中示意性繪示實例密封單元5。密封單元5包含第一面板1及第二面板2。在第一面板1與第二面板2之間提供密封材料4。密封材料4、第一面板1及第二面板2之組合將密封單元5內之區域6密封。欲加以保護免於外部環境之電子器件8可提供於區域6內。 將密封材料4沿密封路徑沈積。將第一面板、第二面板及密封材料構形,使得密封材料4沿整個密封路徑與第一面板1及第二面板2接觸。此外,如下文將進一步詳細闡述的,將密封材料4雷射焊接至面板,以使得沿整個密封路徑在密封材料4與第一面板1之間及在密封材料4與第二面板2之間形成密封。 在各個實施例中,密封路徑至少部分環繞介於第一面板1與第二面板2之間之區域6。密封路徑可(例如)包含至少95%、視情況至少99%之閉合環路24。此一密封路徑之實例顯示於圖3中。或者,如圖1中所繪示,密封路徑可形成完整閉合環路(實例中顯示矩形,但亦可使用其他形狀)。沿密封路徑之密封可藉由沿密封路徑沿單線雷射焊接形成。或者,如圖4中所示意性繪示的,密封路徑可藉由沿複數條平行線41-43雷射焊接形成。沿複數條平行線41-43焊接使密封之可靠性增加。 通常,第一面板1及第二面板2將具有實質上互補之形狀(即,使得若各別表面完美地形成且定向,則可使其完美地平行於彼此)。在實施例中,第一面板1及第二面板2二者皆為實質上平坦的。在另一實施例中,第一面板1及第二面板2以兩個面板共同之恆定曲率半徑彎曲。第一面板1及第二面板2中之任一者或兩者可對可見光譜中之輻射透明。另外,第一面板1及第二面板2中之至少一者應對用於實施雷射焊接(「第二加熱製程」-參見下文)之輻射足夠透明。 第一面板1及第二面板2中之任一者或兩者可包含透明玻璃材料,例如矽酸鹽玻璃。為節約成本及方便起見,矽酸鹽玻璃較佳包含鈉鈣玻璃。鈉鈣玻璃為業內所熟知且可(例如)由大約75%二氧化矽(SiO2 )、來自碳酸鈉(Na2 CO3 )之氧化鈉(Na2 O)、氧化鈣(亦稱為石灰(CaO))及若干種微量添加劑構成。鈉鈣玻璃在暴露於溫度及溫度梯度之大變化時易於破裂。實施本文所揭示方法所需要之極端局部化性質之加熱避免了此等問題,並容許鈉鈣玻璃以高可靠性及產率使用。然而,可使用其他透明玻璃材料,包括(例如)熱膨脹係數低於鈉鈣玻璃(例如硼矽酸鹽玻璃、熔融矽石等)之材料。 第一面板1及第二面板2具有面對欲在後一階段密封之介於第一面板1與第二面板2之間之區域6之各別表面(例如圖中第一面板1之上表面及第二面板2之下表面)。各別表面之間之間隔在區域6內可係標稱上恆定的。 沿密封路徑提供之密封在其最終被完全密封時,在區域6周圍形成密封之部件。在區域6內建立期望之氣體或真空狀態後製得最終密封。因此,最終密封前之方法步驟可包含改變區域6內氣體之壓力或組成。此可藉由將適宜真空幫浦或氣體源與通向區域6之埠連接來達成。該埠可自側面進入區域6 (例如穿過圖3中之空隙(例如空隙26),在此密封材料4未使閉合環路24完整;或穿過第一面板1或第二面板2中之小孔)。當建立期望之氣體或真空狀態時,將埠密封。 現將參考圖5-15闡述形成密封及製造密封單元5之方法及設備。 圖5繪示初始步驟,其中沈積單元11沿第一面板1上之密封路徑沈積密封材料4。沈積製程之性質並無具體限制。在一個實施例中,沈積單元11藉由沿密封路徑移動含有密封材料4之注射器來操作,並使用連接至注射器之壓縮空氣供應系統以適當速率驅動密封材料4自注射器而出。可使用其他印刷技術。 在實施例中,密封材料4包含保持在基質中之金屬粒子。基質及金屬粒子之性質並無具體限制,只要其可實施其各別作用以在第一面板1與第二面板2之間形成密封即可,如下文所述。在實施例中,基質係非金屬。在沈積時,密封材料4需要具有相對低之黏度,以使得其可高效地沈積。隨後,如下文將進一步詳細闡述的,密封材料4將需要提供多種其他功能,例如使第一面板1及第二面板2以密封材料與兩個面板沿整個密封路徑存在連續接觸之方式與密封材料4接觸,此容許金屬粒子熔融(燒結)在一起,且隨後容許藉由將熔融之金屬粒子焊接至第一及第二面板1、2形成密封。 在實施例中,金屬粒子包含以下一或多種:銀、金、鎳、鋁及/或銅。較佳地,金屬粒子包含銀及/或銅。金屬粒子可包含金屬微粒及/或金屬奈米粒子。基質可為液體或膏糊。基質可包含有機載劑或有機載劑之組合,例如基質可包含乙醇及/或乙二醇。在實施例中,基質包含以下一或多種:環氧樹脂、丙烯酸及聚胺基甲酸酯。 在隨後步驟中,如圖6中所繪示,加熱單元12去除(藉由加熱)密封材料之一部分,例如保持密封材料金屬粒子之基質(例如有機載劑或有機載劑之組合)或全部基質之揮發性或易蒸發組分。去除密封材料之部分使密封材料4之剛性增加(使密封材料4之黏度增加)。加熱可以多種方式施加。通常,將需要僅相對低之溫度以達成揮發性組分之充分去除,例如在100℃之區域中保持幾分鐘(例如1-10分鐘)。加熱可同時施加至整個第一面板1及第二面板2上,或可以局部方式施加(例如使用移動紅外線燈或雷射)。 增加密封材料4之剛性期望地增加對在隨後步驟期間密封材料4變形之抗性,此在圖7-9中示意性繪示,其中使第一面板1及第二面板2呈面對構形。面對構形使得第一面板1及第二面板2將密封材料4夾於其間,以確保密封材料4與第一面板1及第二面板2兩者之間沿整個密封路徑全面接觸。在所顯示之實施例中,此製程係使用面板處置器13實施。面板處置器13能抓取第一面板1及第二面板2中之一者或兩者並在其間提供受控的相對移動。面板處置器13移動第一面板1及第二面板2中之任一者或兩者,以使得第一面板1及第二面板2呈面對構形。在圖7之實例中,面板處置器13僅抓取第二面板2並使第二面板2向下移動至第一面板1上。然後,將第一面板1及第二面板2壓在一起,如圖8中所繪示。面對構形使得密封材料4沿整個密封路徑與第一面板及第二面板接觸。此係藉由在將第一面板1及第二面板2壓在一起時,密封材料4沿密封路徑略微變形而達成。變形補償第一面板1中之不規則性、第二面板2中之不規則性及/或第一面板1相對於第二面板2之未對準(如圖9中所示意性繪示)。在實施例中,在加熱密封材料後密封材料4之剛性使得密封材料4之高度在移動第一面板1及第二面板2中之任一者或兩者以使第一面板1及第二面板2呈面對構形期間可降低至少5%、視情況至少10%、視情況至少25%、視情況至少50%、視情況至少75%、視情況至少90%,而無損壞第一面板1或第二面板2之風險或中斷密封材料4沿密封路徑之連續性之風險。圖12顯示第一面板1及第二面板2在呈面對構形時,介於其間之密封材料4之典型表面輪廓。觀察到密封材料4之珠之上表面之變形(平坦化),但密封材料4無過度側向擴散。 如圖10中所繪示,在隨後步驟中,加熱單元21沿密封路徑加熱衍生自密封材料之金屬粒子,以使金屬粒子沿密封路徑熔融。金屬粒子可(例如)藉由去除保持金屬粒子之基質之至少一部分,或藉由起始化學反應導致金屬粒子自密封材料之組分(例如自有機金屬組分)生成或沈澱自密封材料衍生。加熱可稱為第一加熱製程(第二加熱製程在下文闡述)。在一個實施例中,加熱係在150℃-200℃溫度範圍內之烘箱中實施幾十分鐘(例如基於微米/奈米粒子之密封劑材料用50分鐘)。金屬粒子之熔融有效地沿密封路徑形成連續金屬路徑。連續金屬路徑沿一面與第一面板1連續接觸,且沿另一面與第二面板2連續接觸。藉由此熔融製程尚未堅固地形成或完全未形成密封。熔融製程僅提供使用隨後步驟之雷射焊接產生密封所必須之連續金屬路徑。在實施例中,藉由第一加熱製程沿密封路徑熔融金屬粒子使得沿密封路徑介於熔融之金屬粒子與第一面板或第二面板之間之最大空隙具有小於5微米、視情況小於2微米、視情況小於1微米、視情況小於500 nm、視情況小於300 nm、視情況小於150 nm之最大尺寸。圖13係顯示以此方式處理之密封材料之連續金屬表面之SEM影像。 在實施例中,加熱單元21包含雷射,例如二極體激發式固態雷射、纖維雷射、雷射二極體或CO2 雷射。雷射可經構形以提供連續波(CW)雷射束或準連續波(準CW)雷射束。或者,雷射可經構形以提供脈衝雷射束。雷射較佳提供波長在大約500 nm至11000 nm範圍內之雷射束。加熱單元21可移動地經安裝及/或可提供光束掃描光學器件,以使雷射光點自加熱單元21沿整個密封路徑移動。加熱單元21可替代地包含IR燈、微波源或超音波源。 如圖11中所繪示,在隨後步驟中,加熱單元22沿密封路徑提供連續銲縫。在熔融之金屬粒子與第一面板1之間及熔融之金屬粒子與第二面板2之間(即在密封材料4之兩面上)提供連續銲縫。連續銲縫沿密封路徑形成密封。密封係為防止介於密封材料4之內表面4a (參見圖1)與密封材料4之外表面4b之間之氣體直接通過密封材料4。因此,焊接製程使得密封材料4與第一面板1及第二面板2中之任一者之間無空隙。 最近已在一般情況下展現將玻璃雷射焊接至金屬。雷射焊接可使用經構形以提供小於50 ps、視情況小於15 ps、視情況小於1 ps、視情況小於500 fs之脈衝長度之雷射實施。雷射較佳提供波長為大約500 nm至1100 nm之雷射束。重複率可通常在100 kHz至2 MHz之範圍內。可期望相對高之重複率以容許連續脈衝之間之熱累積。每一脈衝需要在來自先前脈衝之熱能消散之前到達,此通常花費大約一微秒。此外,由於連續光點之間所需之相對幾何位移可能係固定的,故增加重複率容許處理沿焊接線更快地進行,藉此改良產量。加熱單元22可包含第一加熱單元子單元22a,其經構形以在密封材料4與第一面板1之間之界面上提供焊接;及第二加熱單元子單元22b,其經構形以在密封材料4與第二面板2之間之界面上提供焊接。因此,焊接可藉由將雷射自兩面導向至密封材料4上來達成。加熱單元22 (若提供,則包括第一加熱單元子單元22a及第二加熱單元子單元22b)可移動地經安裝及/或可提供光束掃描光學器件,以使來自加熱單元22之雷射光點沿整個密封路徑移動。 使用此等雷射參數沈積至密封材料4中之能量之量極小,通常為小於(例如)在先前步驟中實施金屬粒子之熔融(藉由加熱單元21實施)所需能量之數量級。選擇/控制脈衝能量、重複率、雷射光點大小及雷射光點與欲焊接界面之間之相對移動速度(光點速度),以最佳化焊接製程。脈衝重複率及光點速度使得與個別脈衝相關之雷射光點沿密封路徑重疊。 詳細技術闡述於(例如)以下兩個出版物中:1) Zhang等人,APPLIED OPTICS,第54卷,第30期,8957-8961 (2015年10月20日);及2) Carter等人,APPLIED OPTICS,第53卷,第19期,4233-4238 (2014年7月1日)。Zhang等人教示可使用(例如) 800 nm Ti:藍寶石啁啾脈衝放大飛秒雷射系統,其中重複率為1 kHz且脈衝持續時間為160 fs,聚焦於直徑8微米之光點。使用1-35微焦耳(microJoule)範圍內之脈衝能量,其中光點移動之相對速度為30-800微米/秒。Carter等人使用具有7.12 ps脈衝及重複率為400 kHz之1030 nm雷射。雷射功率為1.79 W,其中光點大小為1.2微米且光點速度為1 mm/秒。 將Zhang等人及Carter等人中所揭示之技術應用於固體金屬,而非自經處理以使金屬粒子熔融在一起之密封材料4形成之金屬。難以在使用固體金屬之大距離上實施雷射焊接,此乃因難以確保固體金屬與玻璃表面在整個欲焊接之線上連續接觸。實際存在之任何空隙皆需要足夠小,使得兩個界面仍在雷射之焦深內且足夠小以含有任何電漿。若電漿逸出,則將發生燒蝕而非焊接,此將破裂密封並損壞玻璃及/或金屬。解決此問題之一個方法為將金屬及玻璃夾緊在一起,但此可將不期望之應力引入玻璃中及/或係不方便的。本發明者已認識到,該等挑戰可藉由提供包含金屬粒子而非固體金屬之密封材料4,及在藉由第一及第二面板1、2夾住密封材料4後處理密封材料4以將金屬粒子熔融在一起準備形成焊接來克服。熔融之金屬粒子與欲對其實施焊接之第一及第二面板1、2表面之間之連續接觸可在大距離上可靠地達成,而無需大的夾緊力。 焊接製程之有效性在圖14及15中所顯示之表面輪廓中圖解說明。圖顯示焊接製程如何致使密封材料4之金屬顯著嵌入面板之材料內,從而在面板中沿密封路徑形成連續溝槽。所顯示之實例具有上文參考圖4所論述之類型,其中複數條平行焊接線41-43沿密封路徑形成。複數條焊接線41-43在圖14中可見。複數條焊接線41-43在圖15中不可見,但此可歸因於藉由拉開焊接部分以生成影像所造成之損壞。 額外實施例揭示於以下編號之條款中。 1. 一種形成密封之方法,該方法包含: 提供第一面板及第二面板,其中密封材料存在於第一面板與第二面板之間,密封材料沿整個密封路徑與第一面板及第二面板接觸, 實施第一加熱製程以沿密封路徑加熱衍生自密封材料之金屬粒子,同時密封材料沿整個密封路徑與第一面板及第二面板接觸,以使金屬粒子沿密封路徑熔融;及 與第一加熱製程分開實施第二加熱製程,以沿密封路徑在熔融之金屬粒子與第一面板之間及在熔融之金屬粒子與第二面板之間提供連續銲縫,藉此沿密封路徑生成密封,其中: 第二加熱製程係利用雷射實施。 2. 如條款1之方法,其中藉由第一加熱製程沿密封路徑熔融金屬粒子使得沿密封路徑介於熔融之金屬粒子與第一面板或第二面板之間之最大空隙具有小於500 nm之最大尺寸。 3. 如條款1或2之方法,其中第二加熱製程係利用經構形以提供具有小於50 ps之脈衝長度之脈衝之雷射實施。 4. 如任一前述條款之方法,其中提供第一面板及第二面板按順序包含以下步驟: 將密封材料沈積在第一面板上; 加熱密封材料以去除密封材料之一部分,藉此增加密封材料之剛性;及 移動第一面板及第二面板中之任一者或兩者以使得第一面板及第二面板呈面對構形,其中密封材料沿整個密封路徑與第一面板及第二面板接觸。 5. 如條款4之方法,其中該密封材料在該密封材料之該加熱後之剛性使得密封材料之高度在移動第一面板及第二面板中之任一者或兩者以使第一面板及第二面板呈面對構形期間可降低至少5%,藉此補償以下中之一或多者:第一面板之不規則性、第二面板之不規則性及第一面板相對於第二面板之未對準。 6. 如任一前述條款之方法,其中密封路徑至少部分環繞第一面板與第二面板之間之區域。 7. 如條款6之方法,其中密封路徑包含至少95%之閉合環路。 8. 如條款6或7之方法,其中連續銲縫係沿密封路徑沿複數條平行線提供。 9. 如任一前述條款之方法,其中金屬粒子包含以下中之一或多者:銀、金、鎳、鋁、銅。 10. 如任一前述條款之方法,其中金屬粒子包含金屬微粒或金屬奈米粒子。 11. 如任一前述條款之方法,其中密封材料包含保持在基質中之金屬粒子。 12. 如條款11之方法,其中基質包含液體或膏糊。 13. 如任一前述條款之方法,其進一步包含改變由密封路徑至少部分環繞之區域內氣體之壓力或組成及隨後密封該區域。 14. 如任一前述條款之方法,其中第一面板及第二面板中之任一者或兩者對可見光譜中之輻射係透明的。 15. 如任一前述條款之方法,其中第一面板及第二面板中之任一者或兩者包含透明玻璃材料、較佳矽酸鹽玻璃、更佳鈉鈣玻璃。 16. 一種製造包含第一面板及第二面板之密封單元之方法,該方法包含使用如任一前述條款之方法在第一面板與第二面板之間形成密封。 17. 一種密封單元,其係使用如條款16之方法製造。 18. 一種形成密封之設備,其包含: 沈積單元,其經構形以沿密封路徑將密封材料沈積在第一面板上; 面板處置器,其經構形以移動第一面板及第二面板中之任一者或兩者,以使得第一面板及第二面板呈面對構形,其中密封材料沿整個密封路徑與第一面板及第二面板接觸; 第一加熱單元,其經構形以沿密封路徑加熱衍生自密封材料之金屬粒子,同時密封材料沿整個密封路徑與第一面板及第二面板接觸,以使金屬粒子沿密封路徑熔融;及 第二加熱單元,其經構形以沿密封路徑在熔融之金屬粒子與第一面板之間及熔融之金屬粒子與第二面板之間提供連續銲縫,藉此沿密封路徑生成密封, 其中第二加熱單元包含經構形以提供連續銲縫之雷射。 19. 如條款18之設備,其中雷射經構形以提供具有小於50ps之脈衝長度之脈衝。 20. 如條款18或19之設備,其進一步包含: 第三加熱單元,其經構形以藉由加熱去除密封材料之一部分,藉此增加密封材料之剛性,其中: 面板處置器經構形以在藉由第三加熱單元增加密封材料之剛性後,使第一面板及第二面板中之任一者或兩者移動至面對構形。 21. 如條款18至20中任一者之設備,其中密封路徑至少部分環繞第一面板與第二面板之間之區域。 22. 如條款21之設備,其進一步包含氣體控制及密封裝置,其經構形以改變由密封路徑至少部分環繞之區域內氣體之壓力或組成及隨後密封該區域。The embodiment relates to forming a seal between the first panel 1 and the second panel 2. Sealing can be used to make the sealing unit 5. The sealed unit may form, for example, components of a vacuum insulated glass assembly, an OLED display device, OLED lighting, a smart window, or a photovoltaic system based on perovskite and organics. An example sealing unit 5 is schematically shown in FIGS. 1 and 2. The sealing unit 5 includes a first panel 1 and a second panel 2. A sealing material 4 is provided between the first panel 1 and the second panel 2. The combination of the sealing material 4, the first panel 1 and the second panel 2 seals the region 6 in the sealing unit 5. An electronic device 8 to be protected from the external environment may be provided in the area 6. The sealing material 4 is deposited along the sealing path. The first panel, the second panel, and the sealing material are configured so that the sealing material 4 contacts the first panel 1 and the second panel 2 along the entire sealing path. In addition, as will be explained in further detail below, the sealing material 4 is laser-welded to the panel so that between the sealing material 4 and the first panel 1 and between the sealing material 4 and the second panel 2 are formed along the entire sealing path. seal. In various embodiments, the sealed path at least partially surrounds the area 6 between the first panel 1 and the second panel 2. The sealed path may, for example, include a closed loop 24 of at least 95% and optionally at least 99%. An example of such a sealed path is shown in FIG. 3. Alternatively, as shown in FIG. 1, the sealed path may form a complete closed loop (a rectangle is shown in the example, but other shapes may be used). The seal along the seal path can be formed by laser welding along a single line along the seal path. Alternatively, as schematically illustrated in FIG. 4, the sealed path may be formed by laser welding along a plurality of parallel lines 41-43. Welding along multiple parallel lines 41-43 increases the reliability of the seal. Generally, the first panel 1 and the second panel 2 will have substantially complementary shapes (ie, such that if the respective surfaces are perfectly formed and oriented, they can be perfectly parallel to each other). In an embodiment, both the first panel 1 and the second panel 2 are substantially flat. In another embodiment, the first panel 1 and the second panel 2 are bent with a constant radius of curvature common to the two panels. Either or both of the first panel 1 and the second panel 2 may be transparent to radiation in the visible spectrum. In addition, at least one of the first panel 1 and the second panel 2 should be sufficiently transparent to the radiation used to perform the laser welding ("second heating process"-see below). Either or both of the first panel 1 and the second panel 2 may include a transparent glass material, such as silicate glass. To save cost and convenience, the silicate glass preferably contains soda lime glass. Soda-lime glass is well known in the industry and can be, for example, composed of approximately 75% silicon dioxide (SiO 2 ), sodium oxide (Na 2 O) from sodium carbonate (Na 2 CO 3 ), calcium oxide (also known as lime ( CaO)) and several trace additives. Soda-lime glass is prone to cracking when exposed to large changes in temperature and temperature gradients. The extreme localized nature of the heating required to implement the methods disclosed herein avoids these problems and allows soda-lime glass to be used with high reliability and yield. However, other transparent glass materials may be used, including, for example, materials having a lower coefficient of thermal expansion than soda lime glass (eg, borosilicate glass, fused silica, etc.). The first panel 1 and the second panel 2 have respective surfaces facing the region 6 between the first panel 1 and the second panel 2 to be sealed at a later stage (for example, the upper surface of the first panel 1 in the figure) And the lower surface of the second panel 2). The spacing between the individual surfaces may be nominally constant within the region 6. The seal provided along the sealing path forms a sealed part around the area 6 when it is finally completely sealed. A final seal is created after the desired gas or vacuum state is established in zone 6. Therefore, the method steps before final sealing may include changing the pressure or composition of the gas in the region 6. This can be achieved by connecting a suitable vacuum pump or gas source to the port leading to area 6. The port can enter the area 6 from the side (for example, through a gap in FIG. 3 (such as the gap 26), where the sealing material 4 does not complete the closed loop 24; or through one of the first panel 1 or the second panel 2 Eyelet). When the desired gas or vacuum condition is established, the port is sealed. A method and an apparatus for forming a seal and manufacturing a seal unit 5 will now be described with reference to FIGS. 5-15. FIG. 5 illustrates an initial step in which the deposition unit 11 deposits a sealing material 4 along a sealing path on the first panel 1. The nature of the deposition process is not specifically limited. In one embodiment, the deposition unit 11 is operated by moving the syringe containing the sealing material 4 along the sealing path, and using a compressed air supply system connected to the syringe to drive the sealing material 4 out of the syringe at an appropriate rate. Other printing techniques can be used. In an embodiment, the sealing material 4 contains metal particles held in a matrix. The properties of the matrix and the metal particles are not specifically limited, as long as they can perform their respective functions to form a seal between the first panel 1 and the second panel 2, as described below. In an embodiment, the matrix is non-metal. During deposition, the sealing material 4 needs to have a relatively low viscosity so that it can be deposited efficiently. Subsequently, as will be explained in further detail below, the sealing material 4 will need to provide a variety of other functions, such as making the first panel 1 and the second panel 2 contact the sealing material in a way that the sealing material and the two panels are in continuous contact along the entire sealing path 4 contact, which allows the metal particles to be fused (sintered) together, and then allows a seal to be formed by welding the molten metal particles to the first and second panels 1, 2. In an embodiment, the metal particles include one or more of the following: silver, gold, nickel, aluminum, and / or copper. Preferably, the metal particles include silver and / or copper. The metal particles may include metal particles and / or metal nano particles. The base may be a liquid or a paste. The matrix may include an organic carrier or a combination of organic carriers, for example, the matrix may include ethanol and / or ethylene glycol. In an embodiment, the matrix comprises one or more of the following: epoxy, acrylic, and polyurethane. In a subsequent step, as shown in FIG. 6, the heating unit 12 removes (by heating) a portion of the sealing material, such as a substrate (eg, an organic vehicle or a combination of organic vehicles) that holds the metal particles of the sealing material, or the entire substrate. Volatile or easily vaporizable components. Removing the portion of the sealing material increases the rigidity of the sealing material 4 (increases the viscosity of the sealing material 4). Heating can be applied in a variety of ways. Generally, only relatively low temperatures will be required to achieve adequate removal of volatile components, such as for a few minutes (e.g., 1-10 minutes) in a region of 100 ° C. The heating may be applied to the entire first panel 1 and the second panel 2 at the same time, or may be applied in a localized manner (for example, using a mobile infrared lamp or a laser). Increasing the rigidity of the sealing material 4 desirably increases the resistance to deformation of the sealing material 4 during subsequent steps, which is schematically illustrated in Figs. 7-9, where the first panel 1 and the second panel 2 are brought into a facing configuration . The facing configuration causes the first panel 1 and the second panel 2 to sandwich the sealing material 4 therebetween to ensure that the sealing material 4 and the first panel 1 and the second panel 2 are in full contact along the entire sealing path. In the embodiment shown, this process is implemented using a panel handler 13. The panel handler 13 can grasp one or both of the first panel 1 and the second panel 2 and provide a controlled relative movement therebetween. The panel handler 13 moves one or both of the first panel 1 and the second panel 2 so that the first panel 1 and the second panel 2 have a facing configuration. In the example of FIG. 7, the panel handler 13 only grasps the second panel 2 and moves the second panel 2 down onto the first panel 1. Then, the first panel 1 and the second panel 2 are pressed together, as shown in FIG. 8. The facing configuration makes the sealing material 4 contact the first panel and the second panel along the entire sealing path. This is achieved by slightly deforming the sealing material 4 along the sealing path when the first panel 1 and the second panel 2 are pressed together. The distortion compensates for irregularities in the first panel 1, irregularities in the second panel 2, and / or misalignment of the first panel 1 relative to the second panel 2 (as shown schematically in FIG. 9). In the embodiment, after the sealing material is heated, the rigidity of the sealing material 4 is such that the height of the sealing material 4 moves one or both of the first panel 1 and the second panel 2 so that the first panel 1 and the second panel 2 Can be reduced by at least 5%, at least 10% as the case may be, at least 25% as the case may be, at least 50% as the case may be, at least 75% as the case may be, and at least 90% as the case without damaging the first panel 1 Or the risk of the second panel 2 or the interruption of the continuity of the sealing material 4 along the sealing path. FIG. 12 shows a typical surface profile of the sealing material 4 interposed between the first panel 1 and the second panel 2 in the facing configuration. Deformation (flattening) of the upper surface of the beads of the sealing material 4 was observed, but the sealing material 4 did not excessively diffuse laterally. As shown in FIG. 10, in a subsequent step, the heating unit 21 heats the metal particles derived from the sealing material along the sealing path to melt the metal particles along the sealing path. The metal particles may be derived, for example, by removing at least a portion of the matrix holding the metal particles, or by initiating a chemical reaction that causes the metal particles to self-seal a component of the sealing material (eg, from an organometallic component) or precipitate from the sealing material. Heating may be referred to as a first heating process (a second heating process is described below). In one embodiment, the heating is performed in an oven in a temperature range of 150 ° C to 200 ° C for several tens of minutes (for example, 50 minutes for a micron / nanoparticle-based sealant material). The melting of the metal particles effectively forms a continuous metal path along the sealed path. The continuous metal path is in continuous contact with the first panel 1 along one side, and is in continuous contact with the second panel 2 along the other side. As a result, the melting process has not yet been firmly formed or a seal has not been formed at all. The fusion process provides only the continuous metal path necessary to produce a seal using laser welding in subsequent steps. In an embodiment, the first heating process melts the metal particles along the sealing path so that the maximum gap between the molten metal particles and the first panel or the second panel along the sealing path is less than 5 microns, and optionally less than 2 microns. The maximum size of less than 1 micron as the case, less than 500 nm as the case, less than 300 nm as the case, and less than 150 nm as the case. FIG. 13 is a SEM image showing a continuous metal surface of the sealing material treated in this manner. In an embodiment, the heating unit 21 includes a laser, such as a diode-excited solid-state laser, a fiber laser, a laser diode, or a CO 2 laser. Lasers can be configured to provide continuous wave (CW) laser beams or quasi-continuous wave (quasi-CW) laser beams. Alternatively, the laser may be configured to provide a pulsed laser beam. Lasers preferably provide laser beams with wavelengths in the range of approximately 500 nm to 11000 nm. The heating unit 21 is movably mounted and / or a beam scanning optic can be provided to move the laser light spot from the heating unit 21 along the entire sealed path. The heating unit 21 may alternatively include an IR lamp, a microwave source, or an ultrasonic source. As illustrated in FIG. 11, in a subsequent step, the heating unit 22 provides a continuous weld along a sealed path. Continuous welds are provided between the molten metal particles and the first panel 1 and between the molten metal particles and the second panel 2 (ie, on both sides of the sealing material 4). Continuous welds form a seal along the seal path. The sealing is to prevent the gas between the inner surface 4 a (see FIG. 1) of the sealing material 4 and the outer surface 4 b of the sealing material 4 from directly passing through the sealing material 4. Therefore, the welding process makes no gap between the sealing material 4 and any of the first panel 1 and the second panel 2. Welding glass lasers to metals has recently been shown in general. Laser welding can be performed using lasers configured to provide pulse lengths of less than 50 ps, optionally less than 15 ps, optionally less than 1 ps, and optionally less than 500 fs. The laser preferably provides a laser beam having a wavelength of about 500 nm to 1100 nm. The repetition rate can typically be in the range of 100 kHz to 2 MHz. A relatively high repetition rate can be expected to allow heat buildup between successive pulses. Each pulse needs to arrive before the heat energy from the previous pulse is dissipated, which usually takes about one microsecond. In addition, since the relative geometric displacement required between successive light spots may be fixed, increasing the repetition rate allows processing to proceed faster along the weld line, thereby improving yield. The heating unit 22 may include a first heating unit sub-unit 22a configured to provide welding on an interface between the sealing material 4 and the first panel 1; and a second heating unit sub-unit 22b configured to provide Welding is provided on the interface between the sealing material 4 and the second panel 2. Therefore, welding can be achieved by directing the laser onto the sealing material 4 from both sides. The heating unit 22 (including the first heating unit sub-unit 22a and the second heating unit sub-unit 22b, if provided) is movably mounted and / or a beam scanning optic may be provided to enable a laser light spot from the heating unit 22 Move along the entire sealed path. The amount of energy deposited into the sealing material 4 using these laser parameters is extremely small, and is typically on the order of less than, for example, the energy required to perform the melting of the metal particles (implemented by the heating unit 21) in the previous step. Select / control the pulse energy, repetition rate, laser spot size, and the relative moving speed (light spot speed) between the laser spot and the interface to be welded to optimize the welding process. The pulse repetition rate and spot speed cause the laser spots associated with individual pulses to overlap along the sealed path. Detailed techniques are described in, for example, the following two publications: 1) Zhang et al., APPLIED OPTICS, Volume 54, Issue 30, 8957-8961 (October 20, 2015); and 2) Carter et al., APPLIED OPTICS, Volume 53, Number 19, 4233-4238 (July 1, 2014). Zhang et al. Teach that, for example, a 800 nm Ti: sapphire chirped pulsed femtosecond laser system can be used with a repetition rate of 1 kHz and a pulse duration of 160 fs focused on a spot of light with a diameter of 8 microns. Using pulse energy in the range of 1-35 microJoules, in which the relative speed of light spot movement is 30-800 microns / second. Carter et al. Used a 1030 nm laser with a 7.12 ps pulse and a repetition rate of 400 kHz. The laser power is 1.79 W, with a spot size of 1.2 microns and a spot speed of 1 mm / sec. The techniques disclosed in Zhang et al. And Carter et al. Are applied to solid metals, rather than metals formed from the sealing material 4 that has been processed to fuse metal particles together. It is difficult to perform laser welding over a large distance using solid metal because it is difficult to ensure continuous contact between the solid metal and the glass surface on the entire line to be welded. Any voids that actually exist need to be small enough so that the two interfaces are still within the focal depth of the laser and small enough to contain any plasma. If the plasma escapes, ablation will occur instead of welding, which will break the seal and damage glass and / or metal. One way to solve this problem is to clamp the metal and glass together, but this can introduce undesirable stresses into the glass and / or be inconvenient. The present inventors have recognized that these challenges can be achieved by providing a sealing material 4 containing metal particles instead of solid metal, and after treating the sealing material 4 by sandwiching the sealing material 4 with the first and second panels 1, 2 to The metal particles are fused together to prepare a weld to overcome. Continuous contact between the molten metal particles and the surfaces of the first and second panels 1, 2 to be soldered can be reliably achieved over a large distance without requiring a large clamping force. The effectiveness of the welding process is illustrated in the surface profiles shown in FIGS. 14 and 15. The figure shows how the welding process causes the metal of the sealing material 4 to be significantly embedded in the material of the panel, thereby forming a continuous groove in the panel along the sealing path. The example shown is of the type discussed above with reference to FIG. 4, in which a plurality of parallel weld lines 41-43 are formed along a sealed path. The plurality of welding lines 41-43 can be seen in FIG. The plurality of welding lines 41-43 are not visible in FIG. 15, but this can be attributed to damage caused by pulling apart the welding portion to generate an image. Additional embodiments are disclosed in the following numbered clauses. 1. A method for forming a seal, the method comprising: providing a first panel and a second panel, wherein a sealing material exists between the first panel and the second panel, and the sealing material communicates with the first panel and the second panel along an entire sealing path. Contacting, performing a first heating process to heat the metal particles derived from the sealing material along the sealing path, while the sealing material is in contact with the first panel and the second panel along the entire sealing path to melt the metal particles along the sealing path; and The heating process implements a second heating process separately to provide a continuous weld along the sealing path between the molten metal particles and the first panel and between the molten metal particles and the second panel, thereby creating a seal along the sealing path, where : The second heating process is performed using laser. 2. The method of clause 1, wherein the metal particles are melted along the sealing path by the first heating process so that the maximum gap between the molten metal particles and the first panel or the second panel along the sealing path has a maximum of less than 500 nm size. 3. The method of clause 1 or 2 wherein the second heating process is performed using a laser that is configured to provide a pulse having a pulse length of less than 50 ps. 4. The method of any of the preceding clauses, wherein providing the first panel and the second panel comprises the following steps in order: depositing a sealing material on the first panel; heating the sealing material to remove a portion of the sealing material, thereby increasing the sealing material Rigidity; and moving either or both of the first panel and the second panel so that the first panel and the second panel have a facing configuration, wherein the sealing material follows the entire sealing path with the first panel and the second panel contact. 5. The method of clause 4, wherein the rigidity of the sealing material after the heating of the sealing material causes the height of the sealing material to move either or both of the first panel and the second panel so that the first panel and The second panel can be reduced by at least 5% during the facing configuration, thereby compensating for one or more of the following: irregularities of the first panel, irregularities of the second panel, and the first panel relative to the second panel Misaligned. 6. The method of any preceding clause, wherein the sealed path at least partially surrounds an area between the first panel and the second panel. 7. The method of clause 6, wherein the sealed path contains at least 95% of the closed loop. 8. The method of clause 6 or 7 wherein the continuous welds are provided along the sealed path along a plurality of parallel lines. 9. The method of any of the preceding clauses, wherein the metal particles comprise one or more of the following: silver, gold, nickel, aluminum, copper. 10. The method of any preceding clause, wherein the metal particles comprise metal particles or metal nanoparticles. 11. A method as in any preceding clause, wherein the sealing material comprises metal particles held in a matrix. 12. The method of clause 11, wherein the matrix comprises a liquid or a paste. 13. The method of any of the preceding clauses, further comprising changing the pressure or composition of the gas in an area at least partially surrounded by the sealed path and then sealing the area. 14. The method of any preceding clause, wherein either or both of the first panel and the second panel are transparent to radiation in the visible spectrum. 15. The method of any of the preceding clauses, wherein either or both of the first panel and the second panel comprise a transparent glass material, preferably silicate glass, more preferably soda lime glass. 16. A method of manufacturing a sealed unit including a first panel and a second panel, the method comprising forming a seal between the first panel and the second panel using a method as in any of the foregoing clauses. 17. A sealed unit manufactured using the method of clause 16. 18. A device for forming a seal, comprising: a deposition unit configured to deposit a sealing material on a first panel along a sealing path; a panel handler configured to move the first panel and the second panel Either or both, so that the first panel and the second panel have a facing configuration, wherein the sealing material contacts the first panel and the second panel along the entire sealing path; the first heating unit is configured to The metal particles derived from the sealing material are heated along the sealing path, while the sealing material contacts the first panel and the second panel along the entire sealing path to melt the metal particles along the sealing path; and the second heating unit is configured to The sealed path provides a continuous weld between the molten metal particles and the first panel and between the molten metal particles and the second panel, thereby creating a seal along the sealed path, wherein the second heating unit includes a configuration to provide continuous welding. Laser. 19. The device of clause 18, wherein the laser is configured to provide a pulse having a pulse length of less than 50 ps. 20. The device of clause 18 or 19, further comprising: a third heating unit configured to remove a portion of the sealing material by heating, thereby increasing the rigidity of the sealing material, wherein: the panel handler is configured to After increasing the rigidity of the sealing material by the third heating unit, either or both of the first panel and the second panel are moved to the facing configuration. 21. The device of any of clauses 18 to 20, wherein the sealed path at least partially surrounds an area between the first panel and the second panel. 22. The device of clause 21, further comprising a gas control and sealing device configured to change the pressure or composition of the gas in an area at least partially surrounded by the sealing path and subsequently sealing the area.

1‧‧‧第一面板1‧‧‧First Panel

2‧‧‧第二面板2‧‧‧Second Panel

4‧‧‧密封材料4‧‧‧sealing material

4a‧‧‧內表面4a‧‧‧Inner surface

4b‧‧‧外表面4b‧‧‧outer surface

5‧‧‧密封單元5‧‧‧sealed unit

6‧‧‧區域6‧‧‧ area

8‧‧‧電子器件8‧‧‧Electronics

11‧‧‧沈積單元11‧‧‧ deposition unit

12‧‧‧加熱單元12‧‧‧ heating unit

13‧‧‧面板處置器13‧‧‧ Panel Disposer

21‧‧‧加熱單元21‧‧‧Heating unit

22‧‧‧加熱單元22‧‧‧Heating Unit

22a‧‧‧第一加熱單元子單元22a‧‧‧First heating unit subunit

22b‧‧‧第二加熱單元子單元22b‧‧‧Second heating unit subunit

24‧‧‧閉合環路24‧‧‧ closed loop

26‧‧‧空隙26‧‧‧Gap

41-43‧‧‧平行線、平行焊接線41-43‧‧‧parallel line, parallel welding line

現將參考附圖以實例方式進一步闡述本發明,其中: 圖1係使用實施例之方法形成之密封單元之示意性俯視圖; 圖2係圖1之密封單元沿線A-A之示意性側面剖視圖; 圖3繪示形成至少95%之閉合環路之實例密封路徑; 圖4係透過面板觀察之密封路徑之一部分之示意性俯視圖,其顯示密封材料中之複數條平行焊接線; 圖5-11係繪示形成密封之實例方法中之階段之示意性側視圖; 圖12繪示自白光干涉計獲得之數據,其在密封材料經處理以增加密封材料之剛性及隨後藉由使面板呈面對構形從而使密封材料夾於其間而使密封材料隨後平坦化後,量測密封材料之一部分之表面輪廓; 圖13係顯示使密封材料內之金屬粒子熔融後密封材料之表面之SEM影像; 圖14繪示自白光干涉計獲得之數據,該白光干涉計在自面板之相應部分去除焊接部分後,量測密封材料之焊接部分之表面輪廓;且 圖15繪示自白光干涉計獲得之數據,該白光干涉計在自面板之相應部分去除焊接部分後,量測對應於圖14中所顯示密封材料之焊接部分之面板部分之表面輪廓。The present invention will be further explained by way of example with reference to the accompanying drawings, in which: FIG. 1 is a schematic top view of a sealing unit formed using the method of the embodiment; FIG. 2 is a schematic side cross-sectional view of the sealing unit of FIG. 1 along the line AA; An example seal path forming at least 95% of a closed loop is shown; Figure 4 is a schematic top view of a portion of the seal path viewed through a panel, which shows a plurality of parallel welding lines in the sealing material; Figure 5-11 is a drawing Schematic side view of the stages in the example method of forming a seal; Figure 12 shows data obtained from a white light interferometer that processed the sealing material to increase the rigidity of the sealing material and then by placing the panel in a facing configuration to thereby After the sealing material is sandwiched between it and the sealing material is subsequently flattened, the surface profile of a part of the sealing material is measured; FIG. 13 is a SEM image of the surface of the sealing material after the metal particles in the sealing material are melted; FIG. 14 shows Data obtained from a white light interferometer. After the white light interferometer has been removed from the corresponding part of the panel, the welded part of the sealing material is measured. Figure 15 shows the data obtained from the white light interferometer. After the white light interferometer has been removed from the corresponding portion of the panel, the portion of the panel corresponding to the welded portion of the sealing material shown in FIG. Surface contour.

Claims (22)

一種形成密封之方法,該方法包含: 提供第一面板及第二面板,其中密封材料存在於該第一面板與該第二面板之間,該密封材料沿整個密封路徑與該第一面板及該第二面板接觸, 實施第一加熱製程以沿該密封路徑加熱衍生自該密封材料之金屬粒子,同時該密封材料沿整個該密封路徑與該第一面板及該第二面板接觸,以使該等金屬粒子沿該密封路徑熔融;及 實施與該第一加熱製程分開之第二加熱製程,以沿該密封路徑在該等熔融之金屬粒子與該第一面板之間及該等熔融之金屬粒子與該第二面板之間提供連續焊接,藉此沿該密封路徑生成密封,其中: 該第二加熱製程係利用雷射實施。A method for forming a seal includes: providing a first panel and a second panel, wherein a sealing material is present between the first panel and the second panel, the sealing material is along the entire sealing path with the first panel and the second panel; The second panel contacts, and a first heating process is performed to heat the metal particles derived from the sealing material along the sealing path, and at the same time, the sealing material contacts the first panel and the second panel along the entire sealing path, so that the Metal particles are melted along the sealed path; and a second heating process separate from the first heating process is performed to follow the sealed path between the molten metal particles and the first panel and between the molten metal particles and Continuous welding is provided between the second panels, thereby creating a seal along the sealing path, wherein: the second heating process is performed using a laser. 如請求項1之方法,其中該等金屬粒子藉由該第一加熱製程沿該密封路徑之該熔融使得沿該密封路徑在該等熔融之金屬粒子與該第一面板或該第二面板之間之最大空隙具有小於5微米之最大尺寸。The method of claim 1, wherein the melting of the metal particles along the sealing path by the first heating process is such that between the molten metal particles and the first panel or the second panel along the sealing path The largest void has a largest dimension of less than 5 microns. 如請求項1或2之方法,其中該第二加熱製程係利用經構形以提供具有小於50 ps之脈衝長度之脈衝之雷射實施。The method of claim 1 or 2, wherein the second heating process is performed using a laser configured to provide a pulse having a pulse length of less than 50 ps. 如請求項1或2之方法,其中該第一面板及該第二面板之該提供按順序包含以下步驟: 將該密封材料沈積在該第一面板上; 加熱該密封材料以去除該密封材料之一部分,藉此增加該密封材料之剛性;及 移動該第一面板及該第二面板中之任一者或兩者,以使得該第一面板及該第二面板呈面對構形,其中該密封材料沿整個該密封路徑與該第一面板及該第二面板接觸。The method of claim 1 or 2, wherein the providing of the first panel and the second panel includes the following steps in order: depositing the sealing material on the first panel; heating the sealing material to remove the sealing material A part to increase the rigidity of the sealing material; and moving either or both of the first panel and the second panel so that the first panel and the second panel have a facing configuration, wherein the The sealing material is in contact with the first panel and the second panel along the entire sealing path. 如請求項4之方法,其中該密封材料在該密封材料之該加熱後之剛性使得該密封材料之高度在該第一面板及該第二面板中之任一者或兩者之該移動以使該第一面板及該第二面板呈該面對構形期間可降低至少5%,藉此補償以下中之一或多者:該第一面板之不規則性、該第二面板之不規則性及該第一面板相對於該第二面板之未對準。The method of claim 4, wherein the rigidity of the sealant material after the heating of the sealant material causes the height of the sealant material to move in either or both of the first panel and the second panel so that The first panel and the second panel can be reduced by at least 5% during the facing configuration, thereby compensating for one or more of the following: irregularities of the first panel, irregularities of the second panel And misalignment of the first panel relative to the second panel. 如請求項1或2之方法,其中該密封路徑至少部分環繞該第一面板與該第二面板之間之區域。The method of claim 1 or 2, wherein the sealed path at least partially surrounds an area between the first panel and the second panel. 如請求項6之方法,其中該密封路徑包含至少95%之閉合環路。The method of claim 6, wherein the sealed path contains at least 95% of the closed loop. 如請求項6之方法,其中該連續焊接係沿該密封路徑沿複數條平行線提供。The method of claim 6, wherein the continuous welding is provided along the seal path along a plurality of parallel lines. 如請求項1或2之方法,其中該等金屬粒子包含以下中之一或多者:銀、金、鎳、鋁、銅。The method of claim 1 or 2, wherein the metal particles include one or more of the following: silver, gold, nickel, aluminum, copper. 如請求項1或2之方法,其中該等金屬粒子包含金屬微粒或金屬奈米粒子。The method of claim 1 or 2, wherein the metal particles include metal particles or metal nanoparticles. 如請求項1或2之方法,其中該密封材料包含保持在基質中之該等金屬粒子。The method of claim 1 or 2, wherein the sealing material comprises the metal particles held in a matrix. 如請求項11之方法,其中該基質包含液體或膏糊。The method of claim 11, wherein the base comprises a liquid or a paste. 如請求項1或2之方法,其進一步包含改變至少部分地由該密封路徑環繞之區域內氣體之壓力或組成及隨後密封該區域。The method of claim 1 or 2, further comprising changing the pressure or composition of the gas in an area at least partially surrounded by the sealed path and then sealing the area. 如請求項1或2之方法,其中該第一面板及該第二面板中之任一者或兩者對可見光譜中之輻射係透明的。The method of claim 1 or 2, wherein either or both of the first panel and the second panel are transparent to radiation in the visible spectrum. 如請求項1或2之方法,其中該第一面板及該第二面板中之任一者或兩者包含透明玻璃材料、較佳矽酸鹽玻璃、更佳鈉鈣玻璃。The method of claim 1 or 2, wherein either or both of the first panel and the second panel comprise a transparent glass material, preferably silicate glass, more preferably soda lime glass. 一種製造包含第一面板及第二面板之密封單元之方法,該方法包含使用如請求項1至15中任一項之方法在該第一面板與該第二面板之間形成密封。A method of manufacturing a sealed unit including a first panel and a second panel, the method comprising forming a seal between the first panel and the second panel using a method as in any one of claims 1 to 15. 一種密封單元,其係使用如請求項16之方法製造。A sealed unit is manufactured using a method as claimed in claim 16. 一種形成密封之設備,其包含: 沈積單元,其經構形以沿密封路徑將密封材料沈積在第一面板上; 面板處置器,其經構形以移動該第一面板及該第二面板中之任一者或兩者,以使得該第一面板及該第二面板呈面對構形,其中該密封材料沿整個密封路徑與該第一面板及該第二面板接觸; 第一加熱單元,其經構形以沿該密封路徑加熱衍生自該密封材料之金屬粒子,同時該密封材料沿整個該密封路徑與該第一面板及該第二面板接觸,以使該等金屬粒子沿該密封路徑熔融;及 第二加熱單元,其經構形以沿該密封路徑在該等熔融之金屬粒子與該第一面板之間及該等熔融之金屬粒子與該第二面板之間提供連續焊接,藉此沿該密封路徑生成密封, 其中該第二加熱單元包含經構形以提供該連續焊接之雷射。A device for forming a seal includes: a deposition unit configured to deposit a sealing material on a first panel along a sealing path; a panel handler configured to move the first panel and the second panel Either or both, so that the first panel and the second panel have a facing configuration, wherein the sealing material is in contact with the first panel and the second panel along the entire sealing path; a first heating unit, It is configured to heat metal particles derived from the sealing material along the sealing path, and at the same time, the sealing material contacts the first panel and the second panel along the entire sealing path so that the metal particles follow the sealing path Melting; and a second heating unit configured to provide continuous welding between the molten metal particles and the first panel and between the molten metal particles and the second panel along the sealing path, by This creates a seal along the seal path, wherein the second heating unit includes a laser configured to provide the continuous weld. 如請求項18之設備,其中該雷射經構形以提供具有小於50 ps之脈衝長度之脈衝。The device of claim 18, wherein the laser is configured to provide a pulse having a pulse length of less than 50 ps. 如請求項18或19之設備,其進一步包含: 第三加熱單元,其經構形以藉由加熱去除該密封材料之一部分,藉此增加該密封材料之剛性,其中: 該面板處置器經構形以在藉由該第三加熱單元增加該密封材料之剛性後,使該第一面板及該第二面板中之任一者或兩者移動成為該面對構形。The device of claim 18 or 19, further comprising: a third heating unit configured to remove a portion of the sealing material by heating, thereby increasing the rigidity of the sealing material, wherein: the panel handler is configured After the rigidity of the sealing material is increased by the third heating unit, one or both of the first panel and the second panel are moved into the facing configuration. 如請求項18或19之設備,其中該密封路徑至少部分環繞該第一面板與第二面板之間之區域。The device of claim 18 or 19, wherein the sealed path at least partially surrounds an area between the first panel and the second panel. 如請求項21之設備,其進一步包含氣體控制及密封裝置,其經構形以改變至少部分地由該密封路徑環繞之該區域內氣體之壓力或組成且隨後密封該區域。The apparatus of claim 21 further comprising a gas control and sealing device configured to change the pressure or composition of the gas in the area at least partially surrounded by the sealing path and then sealing the area.
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