TW201901743A - Mask assembly, apparatus and method for edge treatment - Google Patents

Mask assembly, apparatus and method for edge treatment Download PDF

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Publication number
TW201901743A
TW201901743A TW107115494A TW107115494A TW201901743A TW 201901743 A TW201901743 A TW 201901743A TW 107115494 A TW107115494 A TW 107115494A TW 107115494 A TW107115494 A TW 107115494A TW 201901743 A TW201901743 A TW 201901743A
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Taiwan
Prior art keywords
workpiece
mask
platen
bracket
center
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TW107115494A
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Chinese (zh)
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弗萊徹 伊恩 波特
菲力浦 萊恩
基斯 A. 費恩隆德
麥可 思薇爾斯
理查 艾倫 斯普林克
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美商瓦里安半導體設備公司
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Publication of TW201901743A publication Critical patent/TW201901743A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682Mask-wafer alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Abstract

Provided are a mask assembly, an apparatus and a method for edge treatment. In some embodiments, an apparatus includes a roplat having a rotatable assembly, and a platen coupled to the rotatable assembly, wherein the platen is configured to hold a workpiece. The apparatus further includes a bracket affixed to the rotatable assembly, and a mask directly coupled to the bracket, wherein the mask is positioned adjacent the workpiece. The mask covers an inner portion of the platen and the workpiece, leaving just an outer circumferential edge of the workpiece exposed to an ion treatment. In some embodiments, the platen is permitted to rotate relative to the bracket during an ion treatment. In some embodiments, the mask includes a solid plate section devoid of any openings, and a mounting portion extending from the plate section, wherein the mounting portion is directly coupled to an extension arm of the bracket.

Description

工件邊緣處理用固定位置罩幕Fixed position mask for workpiece edge processing

本公開的實施例涉及用於選擇性處理工件的方法,且更確切地說,涉及使用固定位置蒙板(mask)選擇性處理半導體工件的外部部分的方法。Embodiments of the present disclosure relate to methods for selectively processing workpieces and, more particularly, to methods of selectively processing external portions of semiconductor workpieces using fixed position masks.

半導體裝置的產率提高是持續的目標。改進的一個方面是在徑向方向上整個工件中的處理均勻性。在某些處理中,工件可在工件中心附近的接受更多處理。舉例來說,沉積製程可在工件的中心附近沉積比在工件的外部邊緣附近更多的材料。這可歸因於在沉積腔室的中心附近增加的等離子體密度。The increase in yield of semiconductor devices is a continuing goal. One aspect of the improvement is the uniformity of processing throughout the workpiece in the radial direction. In some processes, the workpiece can receive more processing near the center of the workpiece. For example, the deposition process can deposit more material near the center of the workpiece than near the outer edge of the workpiece. This can be attributed to the increased plasma density near the center of the deposition chamber.

作為另一實例,由於工件的外部邊緣可能在某種程度上比工件的其餘處更冷,所以加熱式植入可在外部邊緣附近提供不同的量。在又另一實例中,由於朝向工件的外部邊緣推動塗層的向心力,所以相較於工件中心,旋轉塗佈製程可在工件的外部邊緣附近保留更多材料。As another example, the heated implant can provide a different amount near the outer edge since the outer edge of the workpiece may be somewhat cooler than the rest of the workpiece. In yet another example, since the centripetal force of the coating is pushed toward the outer edge of the workpiece, the spin coating process can retain more material near the outer edge of the workpiece than the center of the workpiece.

在這些實例中,在徑向方向上的處理非均勻性可不利地影響半導體工件的產率。在一些情況下,作出改進處理均勻性的努力。然而,可存在對所獲得均勻性的程度的限制。In these examples, processing non-uniformities in the radial direction can adversely affect the yield of the semiconductor workpiece. In some cases, efforts have been made to improve the uniformity of processing. However, there may be limits to the extent of uniformity obtained.

根據這些和其它考慮因素,提供本公開內容。In accordance with these and other considerations, the present disclosure is provided.

鑒於前述,本公開的實施例提供用於使用固定位置蒙板(mask)選擇性地處理工件的僅外部部分以改進處理均勻性的技術。In view of the foregoing, embodiments of the present disclosure provide techniques for selectively processing only the outer portion of a workpiece using a fixed position mask to improve processing uniformity.

在根據本公開的一個實施例中,設備可包含具有可旋轉組合件的台板(roplat),以及耦接到可旋轉組合件的壓板和托架,其中壓板配置成固持工件。設備可進一步包含直接耦接到托架的蒙板。蒙板定位成鄰近於壓板,其中所述蒙板覆蓋壓板的內部部分,從而使工件的外部周向邊緣暴露以進行離子處理。In one embodiment in accordance with the present disclosure, an apparatus can include a roplat having a rotatable assembly, and a platen and bracket coupled to the rotatable assembly, wherein the platen is configured to hold the workpiece. The device can further include a mask that is directly coupled to the bracket. The mask is positioned adjacent to the platen, wherein the mask covers the inner portion of the platen such that the outer circumferential edge of the workpiece is exposed for ion processing.

在根據本公開的另一實施例中,蒙板組合件可包含附連到台板的可旋轉組合件的托架,且蒙板直接耦接到托架。蒙板定位成鄰近於能夠支撐工件的壓板,其中所述蒙板覆蓋工件的內部部分,從而使工件的僅外部周向邊緣暴露以進行離子處理。In another embodiment in accordance with the present disclosure, the mask assembly can include a bracket attached to the rotatable assembly of the deck and the mask is directly coupled to the bracket. The mask is positioned adjacent to a platen capable of supporting a workpiece, wherein the mask covers an interior portion of the workpiece such that only the outer circumferential edge of the workpiece is exposed for ion processing.

在根據本公開的又另一實施例中,方法可包含提供耦接到台板的可旋轉組合件的壓板,所述壓板配置成固持工件。方法可進一步包含提供附連到可旋轉組合件的托架,且隨後將蒙板定位成鄰近於壓板。蒙板直接耦接到托架,其中所述蒙板覆蓋壓板和工件的內部部分,從而使工件的僅外部周向邊緣暴露以進行離子處理。In yet another embodiment in accordance with the present disclosure, a method can include providing a platen coupled to a rotatable assembly of a platen configured to hold a workpiece. The method can further include providing a bracket attached to the rotatable assembly and then positioning the mask adjacent to the platen. The mask is directly coupled to the carrier, wherein the mask covers the inner portion of the platen and the workpiece such that only the outer circumferential edge of the workpiece is exposed for ion processing.

現將在下文中參考隨附圖式更充分地描述本實施例,所述圖式中繪示了一些實施例。本公開的主題可以許多不同形式實施且並不解釋為限於本文中所闡述的實施例。提供這些實施例是為了使得本公開將是透徹且完整的,並且這些實施例將把主題的範圍充分地傳達給所屬領域的技術人員。在圖式中,相同標號始終指代相同元件。The present embodiments will now be described more fully hereinafter with reference to the accompanying drawings in which FIG. The subject matter of the present disclosure may be implemented in many different forms and is not construed as being limited to the embodiments set forth herein. The embodiments are provided so that this disclosure will be thorough and complete, and the scope of the subject matter will be fully conveyed to those skilled in the art. In the drawings, the same reference numerals are used to refer to the same elements.

如本文中所使用,除非另外指示,否則以單數形式陳述且前面有詞“一(a/an)”的元件或操作應理解為可能包含多個元件或操作。此外,已在一個或多個元件或元件的上下文中描述了本文中的各種實施例。元件或元件可包括佈置成執行某些操作的任何結構。雖然可借助於實例將實施例描述為在某一拓撲中具有有限數量的元件,但是所述實施例在替代拓撲中仍可按所給定實施方案的需要包含更多或更少元件。注意,對“一個實施例”或“一實施例”的任何參考意指結合實施例所描述的特定部件、結構或特徵包含於至少一個實施例中。片語“在一個實施例中”、“在一些實施例中”以及“在各種實施例中”在本說明書中的各種位置中的出現不必全部參考相同實施例。An element or operation recited in the singular and "a" or "an" In addition, various embodiments herein have been described in the context of one or more elements or elements. An element or element can include any structure that is arranged to perform certain operations. Although embodiments may be described by way of example as having a limited number of elements in a certain topology, the embodiments may still include more or fewer elements in the alternative topology as needed for a given implementation. It is noted that any reference to "one embodiment" or "an embodiment" means that a particular component, structure or feature described in connection with the embodiments is included in at least one embodiment. The appearances of the phrases "in one embodiment", "in some embodiments", and "in various embodiments" are not necessarily all referring to the same embodiments.

本公開的實施例包含一種用於工件邊緣處理的固定位置蒙板(mask)。在一些實施例中,設備包含具有可旋轉組合件的台板(roplat),以及耦接到可旋轉組合件的壓板,其中所述壓板配置成固持工件。設備進一步包含附連到可旋轉組合件的托架,以及直接耦接到托架的蒙板。蒙板定位成鄰近於壓板,且其中所述蒙板覆蓋壓板和工件的內部部分,從而使工件的僅外部周向邊緣暴露。在一些實施例中,在離子處理(例如植入或濺鍍))期間准許壓板相對於托架旋轉。在一些實施例中,蒙板包含不含任何開口的固體板,以及從板部分延伸的安裝部分,其中安裝部分直接耦接到托架的延伸臂。Embodiments of the present disclosure include a fixed position mask for workpiece edge processing. In some embodiments, an apparatus includes a roplat having a rotatable assembly, and a platen coupled to the rotatable assembly, wherein the platen is configured to hold the workpiece. The device further includes a bracket attached to the rotatable assembly and a mask coupled directly to the bracket. The mask is positioned adjacent to the platen, and wherein the mask covers the platen and the inner portion of the workpiece such that only the outer circumferential edge of the workpiece is exposed. In some embodiments, the platen is permitted to rotate relative to the carriage during ion treatment (eg, implantation or sputtering). In some embodiments, the mask includes a solid plate that does not have any openings, and a mounting portion that extends from the plate portion, wherein the mounting portion is directly coupled to the extension arm of the bracket.

本公開的設備和方法准許工件的僅外部部分/工件的選擇性植入。蒙板安置在離子束與工件之間,且略微小於工件。蒙板透過托架附連到台板的中心區塊,以使得壓板在載入/卸載位置與操作位置之間任意旋轉而不移動蒙板。在某些實施例中,蒙板和/或托架成形,以便不會干擾壓板的旋轉。在其它實施例中,蒙板可附連到台板的臂。The apparatus and method of the present disclosure permits selective implantation of only the outer portion/workpiece of the workpiece. The mask is placed between the ion beam and the workpiece and is slightly smaller than the workpiece. The mask is attached to the central section of the deck by a bracket such that the platen is arbitrarily rotated between the loading/unloading position and the operating position without moving the mask. In some embodiments, the mask and/or bracket are shaped so as not to interfere with the rotation of the platen. In other embodiments, the mask can be attached to the arms of the platen.

工件的外部部分/工件可以是環圈,其中環圈的外部尺寸是工件的周長。舉例來說,如果工件具有300毫米的直徑,那麼環圈可具有300毫米的外徑且內徑略微小於300毫米。環圈的寬度可以是幾十毫米,或可以是僅幾毫米。換句話說,環圈的寬度可改變且不受本公開的限制。The outer portion of the workpiece/workpiece may be a loop, wherein the outer dimension of the loop is the perimeter of the workpiece. For example, if the workpiece has a diameter of 300 mm, the loop may have an outer diameter of 300 mm and an inner diameter slightly smaller than 300 mm. The width of the loop may be tens of millimeters, or may be only a few millimeters. In other words, the width of the loop can vary and is not limited by the disclosure.

在一些實施例中,組合件進一步包含作為裝置的部分的處理元件,如計算裝置。處理元件可與成像裝置(例如視頻或靜態相機)就位置資料通信以相對于蒙板將工件精確地放置在設置準確度視窗內。舉例來說,處理元件配置成從成像裝置接收位置資料以計算蒙板中心。單獨計算工件中心,且隨後透過使蒙板中心與工件中心對準來將工件引入到壓板頂上、蒙板下方的位置中。In some embodiments, the assembly further includes a processing element, such as a computing device, that is part of the device. The processing element can be in positional communication with an imaging device (eg, a video or still camera) to accurately position the workpiece within the set accuracy window relative to the mask. For example, the processing element is configured to receive location data from the imaging device to calculate a mask center. The center of the workpiece is calculated separately and then the workpiece is introduced into the top of the platen, below the mask, by aligning the center of the mask with the center of the workpiece.

現參考圖1,將更詳細地描述用以執行對根據本公開的實施例的工件的外部部分的選擇性處理的實例射束線離子植入系統100。如所說明,射束線離子植入系統100可包含離子源和一系列射束線組件,離子束穿過所述射束線組件。離子源可包括產生離子的離子源腔室102。離子源也可包括電源101和安置在離子源腔室102附近的提取電極104。提取電極104可包含抑制電極104a和接地電極104b。離子源腔室102、抑制電極104a以及接地電極104b可包含孔口。離子源腔室102可包含提取孔口(未繪示),抑制電極104a可包含抑制電極孔口(未繪示),且接地電極104b可包含接地電極孔口(未繪示)。孔口可彼此連通以便允許產生於離子源腔室102中的離子穿過且朝向射束線組件。Referring now to Figure 1, an example beamline ion implantation system 100 for performing selective processing of an outer portion of a workpiece in accordance with an embodiment of the present disclosure will be described in greater detail. As illustrated, beamline ion implantation system 100 can include an ion source and a series of beamline assemblies through which the ion beam passes. The ion source can include an ion source chamber 102 that produces ions. The ion source can also include a power source 101 and an extraction electrode 104 disposed adjacent the ion source chamber 102. The extraction electrode 104 may include a suppression electrode 104a and a ground electrode 104b. The ion source chamber 102, the suppression electrode 104a, and the ground electrode 104b may include apertures. The ion source chamber 102 can include an extraction aperture (not shown), the suppression electrode 104a can include an suppression electrode aperture (not shown), and the ground electrode 104b can include a ground electrode aperture (not shown). The apertures may be in communication with each other to allow ions generated in the ion source chamber 102 to pass through and toward the beamline assembly.

射束線元件可包含(例如)品質分析儀106、第一加速或減速台108、准直儀110以及第二加速或減速台112。很像操控光束的一系列光學透鏡,射束線組件可過濾、聚焦以及操控離子或離子束120。可將穿過射束線元件的離子束120導向安裝在組合件130的壓板116或夾具上的工件125(也稱為“晶片”)。工件125可透過設備(下文稱為“台板”)在一個或多個維度上移動。台板可配置成使工件125圍繞工件125的中心點旋轉,且使工件125移動,如此將離子束120引導到工件125的特定區域和/或整個工件125。The beamline element can include, for example, a quality analyzer 106, a first acceleration or deceleration stage 108, a collimator 110, and a second acceleration or deceleration stage 112. Much like a series of optical lenses that manipulate the beam, the beamline component filters, focuses, and manipulates the ion or ion beam 120. The ion beam 120 passing through the beamline element can be directed to a workpiece 125 (also referred to as a "wafer") mounted on a platen 116 or jig of the assembly 130. The workpiece 125 is movable in one or more dimensions through a device (hereinafter referred to as a "platen"). The platen can be configured to rotate the workpiece 125 about a center point of the workpiece 125 and move the workpiece 125 such that the ion beam 120 is directed to a particular region of the workpiece 125 and/or the entire workpiece 125.

舉例來說,可將離子束120導向工件125,以使得離子束120延伸穿過工件125,從而形成稱為弦(chord)的幾何線。離子束120可以是長度遠大於寬度的帶狀離子束。舉例來說,離子束120的長度可以是數百毫米,而離子束120的寬度可以是大約十毫米。離子束20沿長度方向可以是筆直的。當然,也可使用其它尺寸且所述尺寸在本公開的範圍內。For example, ion beam 120 can be directed to workpiece 125 such that ion beam 120 extends through workpiece 125 to form a geometric line called a chord. The ion beam 120 can be a ribbon ion beam that is much longer than the width. For example, the length of the ion beam 120 can be hundreds of millimeters, and the width of the ion beam 120 can be about ten millimeters. The ion beam 20 can be straight along the length. Of course, other sizes can also be used and are within the scope of the present disclosure.

現轉而參考圖2到圖3,將更詳細地描述用於選擇性處理根據本公開的實施例的工件的外部部分的組合件130。組合件130包含台板132,所述台板包含耦接到彼此間隔開的兩個朝上延伸的側臂136的基座134。可旋轉組合件140安置在側臂136之間的位置中且以可旋轉方式耦接到側臂136。更具體地說,可旋轉組合件140的中心區塊142連接在側臂136之間。提供壓板116以固持工件(未繪示),壓板116透過耦接到安裝板145的壓板適配器板144來耦接到中心區塊142,其中壓板適配器板144支撐壓板116。在一些實施例中,壓板116可以是能夠透過使用靜電力將工件夾持就位的靜電卡盤(electrostatic chuck)。第一電動機(未繪示)可安置在可旋轉組合件140內以允許壓板116圍繞軸線146旋轉/自旋,其中軸線146垂直於壓板116的平面且穿過壓板116的中心。Turning now to Figures 2 through 3, the assembly 130 for selectively processing the outer portion of the workpiece in accordance with an embodiment of the present disclosure will be described in greater detail. The assembly 130 includes a platen 132 that includes a base 134 that is coupled to two upwardly extending side arms 136 that are spaced apart from each other. The rotatable assembly 140 is disposed in a position between the side arms 136 and is rotatably coupled to the side arms 136. More specifically, the central block 142 of the rotatable assembly 140 is coupled between the side arms 136. A platen 116 is provided to hold a workpiece (not shown) that is coupled to the central block 142 by a platen adapter plate 144 coupled to the mounting plate 145, wherein the platen adapter plate 144 supports the platen 116. In some embodiments, the platen 116 can be an electrostatic chuck that can hold the workpiece in place by the use of electrostatic forces. A first motor (not shown) can be disposed within the rotatable assembly 140 to allow the platen 116 to rotate/spin about the axis 146, wherein the axis 146 is perpendicular to the plane of the platen 116 and passes through the center of the platen 116.

第二電動機(未繪示)可安置在台板132內,如在中心區塊142內或在側臂136內。第二電動機允許可旋轉組合件140圍繞第二軸線149旋轉。第二軸線149可以是水準的,且垂直於軸線146定向。可旋轉組合件140可能夠進行至少90°的旋轉。舉例來說,台板132具有圖2中所示的第一位置,所述位置稱為載入/卸載位置,其中可旋轉組合件140定向成使得壓板116是水準或大致水準的。在處於這一載入/卸載位置中時,可將工件放置在壓板116上,且在處理之後,隨後可從壓板116去除。台板132還具有圖3中所示的第二位置,所述位置稱為操作位置,其中可旋轉組合件140定向成使得壓板116是垂直或大致垂直的。在這一操作位置中,壓板116和所夾持工件面向導向壓板116的離子束120。換句話說,當台板132處於圖3中所示的位置中時,由壓板116的表面151所形成的平面垂直於離子束120。A second motor (not shown) can be disposed within the platen 132, such as within the central block 142 or within the side arms 136. The second electric motor allows the rotatable assembly 140 to rotate about the second axis 149. The second axis 149 can be level and oriented perpendicular to the axis 146. The rotatable assembly 140 can be capable of rotating at least 90°. For example, the platen 132 has a first position shown in FIG. 2, referred to as a loading/unloading position, wherein the rotatable assembly 140 is oriented such that the platen 116 is level or substantially level. While in this loading/unloading position, the workpiece can be placed on the platen 116 and, after processing, can then be removed from the platen 116. The platen 132 also has a second position, shown in Figure 3, referred to as an operational position, wherein the rotatable assembly 140 is oriented such that the platen 116 is vertical or substantially vertical. In this operational position, the platen 116 and the clamped workpiece face the ion beam 120 directed to the platen 116. In other words, when the platen 132 is in the position shown in FIG. 3, the plane formed by the surface 151 of the platen 116 is perpendicular to the ion beam 120.

組合件130進一步包含附連到可旋轉組合件140的中心區塊142的托架154,以及直接耦接到托架154的蒙板155。如所繪示,蒙板155定位成鄰近於壓板116以覆蓋壓板116和工件的內部部分156,從而使工件的外部周向邊緣在離子處理期間暴露於離子束120。蒙板155可透過耦接到托架154的安裝部分160來支撐於遠離壓板116的位置中,如下文將更詳細地描述。蒙板155可以使得壓板116圍繞軸線146和第二軸線149任意旋轉而不接觸蒙板155或托架154的方式附連到托架154。蒙板155和托架154可共同構成蒙板組合件157。The assembly 130 further includes a bracket 154 that is attached to the central block 142 of the rotatable assembly 140 and a mask 155 that is directly coupled to the bracket 154. As illustrated, the mask 155 is positioned adjacent to the platen 116 to cover the platen 116 and the inner portion 156 of the workpiece such that the outer circumferential edge of the workpiece is exposed to the ion beam 120 during ion processing. The mask 155 can be supported in a position away from the platen 116 by a mounting portion 160 coupled to the bracket 154, as will be described in more detail below. The mask 155 can attach the platen 116 to the bracket 154 in any manner that rotates about the axis 146 and the second axis 149 without contacting the mask 155 or bracket 154. Mask 155 and bracket 154 may together form a mask assembly 157.

在各種實施例中,蒙板155是不含任何穿過其形成的開口的固體材料片(例如石墨、鋁或其它合適材料),以便阻擋離子到達工件的中心區域。在圖3中所示的操作位置中,將離子束120導向工件且准許處理/撞擊由蒙板155暴露的工件的僅外部周向邊緣。為了處理/植入工件的整個外部部分,在將離子束120導向台板132時,壓板116圍繞軸線146旋轉。In various embodiments, the mask 155 is a sheet of solid material (eg, graphite, aluminum, or other suitable material) that does not contain any openings formed therethrough to block ions from reaching the central region of the workpiece. In the operational position shown in FIG. 3, the ion beam 120 is directed to the workpiece and permits only the outer circumferential edge of the workpiece exposed by the mask 155 to be processed/impacted. To process/implant the entire outer portion of the workpiece, the platen 116 rotates about the axis 146 as the ion beam 120 is directed toward the platen 132.

植入到工件的外部部分中的量可以多種方式控制。舉例來說,在一個實施例中,將壓板116圍繞軸線146的轉速設置為在僅一次旋轉中獲得所要植入的量。可基於預先測量的離子束電流來測定轉速。舉例來說,可在執行處理工序之前執行校準過程。在這一校準過程中,可如透過使用法拉第杯(Faraday cup)來測量離子束電流。基於所測量的離子束電流,可測定壓板116的轉速。如上文所陳述,在某些實施例中,測定轉速以在壓板116的一次旋轉期間植入所要的量。然而在其它實施例中,可結合壓板旋轉的所要次數來測定轉速。舉例來說,如果工件在兩次旋轉期間進行植入,那麼壓板116可以兩倍角速度旋轉。The amount implanted into the outer portion of the workpiece can be controlled in a variety of ways. For example, in one embodiment, the rotational speed of the platen 116 about the axis 146 is set to achieve the amount to be implanted in only one revolution. The rotational speed can be determined based on the pre-measured ion beam current. For example, the calibration process can be performed prior to performing the processing steps. During this calibration, the beam current can be measured by using a Faraday cup. Based on the measured ion beam current, the rotational speed of the platen 116 can be determined. As stated above, in certain embodiments, the rotational speed is measured to implant the desired amount during one rotation of the platen 116. In other embodiments, however, the rotational speed can be determined in conjunction with the desired number of rotations of the platen. For example, if the workpiece is implanted during two rotations, the platen 116 can be rotated at twice the angular velocity.

在某些實施例中,壓板116可能夠在略微大於360°的範圍內圍繞軸線146旋轉。如此,多次旋轉可透過首先使壓板116在如順時針的第一方向上進行第一次旋轉來實現。隨後在如逆時針的相反的第二方向上執行第二次旋轉。可以所要旋轉次數重複這一交替模式。In certain embodiments, the platen 116 can be rotatable about the axis 146 over a range of slightly greater than 360°. As such, multiple rotations can be achieved by first first rotating the platen 116 in a first direction, such as clockwise. A second rotation is then performed in a second, opposite direction, counterclockwise. This alternating pattern can be repeated for the number of rotations required.

現轉而參考圖4到圖5,將更詳細地描述根據本公開的實施例的托架154。為易於查看,圖4展現去除蒙板155、壓板116以及壓板適配器板144的組合件130。如所繪示,托架154包含主體164,以及穿過主體164形成的中心開口166。設定中心開口166的尺寸以使其包圍連接到可旋轉組合件140的中心區塊142的安裝板145。多個固定件開口170圍繞中心開口166而提供,以用於將主體164緊固到中心區塊142。Turning now to Figures 4 through 5, a bracket 154 in accordance with an embodiment of the present disclosure will be described in greater detail. For ease of viewing, FIG. 4 shows an assembly 130 that removes the mask 155, the platen 116, and the platen adapter plate 144. As illustrated, the bracket 154 includes a body 164 and a central opening 166 formed through the body 164. The central opening 166 is sized to enclose a mounting plate 145 that is coupled to the central block 142 of the rotatable assembly 140. A plurality of fastener openings 170 are provided around the central opening 166 for securing the body 164 to the central block 142.

如進一步所示,托架154包含從主體164延伸的延伸臂172。延伸臂172可例如沿平行於第二軸線149的方向遠離主體164側向延伸。在一些實施例中,延伸臂172延伸超出側臂136中的一個以適應所使用的工件/壓板的大小。延伸臂172進一步包含外部末端處的支撐壁174,支撐壁174總體上垂直於主體164(例如沿軸線146)定向。如所繪示,支撐壁174具有用以使蒙板155與工件和壓板116分離的高度‘H’。在一些實施例中,支撐壁174具有凸緣176,所述凸緣包含形成於其中的多個開口177以容納用於將支撐壁174耦接到蒙板155的一組固定件(未繪示)。在一些實施例中,托架154具有僅一個延伸臂172和在單獨點處接觸蒙板155的支撐壁174。藉由最小化耦接托架和蒙板的支撐部件的數量,可透過離子處理同時撞擊工件的更多外部周向邊緣。As further shown, the bracket 154 includes an extension arm 172 that extends from the body 164. The extension arm 172 can extend laterally away from the body 164, for example, in a direction parallel to the second axis 149. In some embodiments, the extension arm 172 extends beyond one of the side arms 136 to accommodate the size of the workpiece/platen used. The extension arm 172 further includes a support wall 174 at the outer end that is generally oriented perpendicular to the body 164 (eg, along the axis 146). As illustrated, the support wall 174 has a height 'H' to separate the mask 155 from the workpiece and the platen 116. In some embodiments, the support wall 174 has a flange 176 that includes a plurality of openings 177 formed therein to receive a set of fasteners for coupling the support wall 174 to the mask 155 (not shown) ). In some embodiments, the bracket 154 has only one extension arm 172 and a support wall 174 that contacts the mask 155 at a single point. By minimizing the number of support members that couple the bracket and the mask, more peripheral circumferential edges of the workpiece can be simultaneously impacted by ion treatment.

可旋轉組合件140可進一步包含將中心區塊142耦接到壓板適配器板144且連接到壓板116(圖1到圖3)的連杆178。連杆178沿軸線146延伸,且穿過安裝板145和托架154。在一些實施例中,鍵控部件180可耦接到連杆178且從所述連杆延伸。鍵控部件180可以是能夠嵌套在壓板116中的對應溝道(未繪示)內的3個尖頭組件以將扭矩從連杆178更好地轉移到壓板116。The rotatable assembly 140 can further include a link 178 that couples the central block 142 to the platen adapter plate 144 and to the platen 116 (Figs. 1-3). Link 178 extends along axis 146 and passes through mounting plate 145 and bracket 154. In some embodiments, keying component 180 can be coupled to and extend from link 178. Keying component 180 can be three pointed assemblies that can be nested within corresponding channels (not shown) in platen 116 to better transfer torque from link 178 to platen 116.

現轉而參考圖6,將更詳細地描述根據本公開的實施例的蒙板155。如所繪示,蒙板155可包含板部分182,以及從板部分182延伸的安裝部分160。安裝部分160直接耦接到延伸臂172的支撐壁174(圖5)。如所繪示,板部分182大體上呈圓形以使其與工件125的形狀相對應。在其它實施例中,板部分182可呈任何各種其它形狀。如所繪示,板部分182小於工件125以准許工件125的外部周向邊緣185由板部分182暴露從而受如離子植入和/或離子濺鍍的離子處理撞擊。換句話說,板部分182的半徑‘r1’小於/短於壓板和/或工件125的半徑‘r2’。在一些實施例中,r2比r1長2毫米到20毫米之間。如所繪示,安裝部分160可覆蓋外部周向邊緣185的一區段。在一些實施例中,安裝部分160覆蓋外部周向邊緣185的小於20%,以便允許離子盡可能多地撞擊外部周向邊緣185。在處理期間,使壓板/工件125相對于蒙板155旋轉准許全部外部周向邊緣185由離子束120同等或大致同等地處理(圖3)。在一些實施例中,工件125在所有處理過程中可保留在壓板上,而不必去除。Turning now to Figure 6, a mask 155 in accordance with an embodiment of the present disclosure will be described in greater detail. As illustrated, the mask 155 can include a plate portion 182 and a mounting portion 160 that extends from the plate portion 182. Mounting portion 160 is directly coupled to support wall 174 of extension arm 172 (Fig. 5). As illustrated, the plate portion 182 is generally circular to correspond to the shape of the workpiece 125. In other embodiments, the plate portion 182 can take any of a variety of other shapes. As illustrated, the plate portion 182 is smaller than the workpiece 125 to permit the outer circumferential edge 185 of the workpiece 125 to be exposed by the plate portion 182 to be impacted by ion treatment such as ion implantation and/or ion sputtering. In other words, the radius 'r1' of the plate portion 182 is smaller/shorter than the radius 'r2' of the platen and/or the workpiece 125. In some embodiments, r2 is between 2 mm and 20 mm longer than r1. As illustrated, the mounting portion 160 can cover a section of the outer circumferential edge 185. In some embodiments, the mounting portion 160 covers less than 20% of the outer circumferential edge 185 to allow ions to strike the outer circumferential edge 185 as much as possible. During processing, rotating the platen/workpiece 125 relative to the mask 155 permits all of the outer circumferential edges 185 to be treated equally or substantially equally by the ion beam 120 (Fig. 3). In some embodiments, the workpiece 125 may remain on the platen during all processing without having to be removed.

現轉而參考圖7,將更詳細地描述根據本公開的實施例的組合件230。如所繪示,組合件230包含台板232,如上文所描述的台板132。如此,出於簡潔起見,將在下文中描述台板232的僅某些方面。組合件230進一步包含如攝像機或靜態相機的一個或多個成像裝置210,所述成像裝置用以確保台板232的蒙板255與工件225之間的正確對準。成像裝置210可鄰近於含有台板232的腔室(未繪示)的視窗安裝。可將一個或多個光源連接到腔室以使得成像裝置210能夠充分地捕獲台板232的元件的位置資訊。舉例來說,在一個非限制性實施例中,成像裝置210可鄰近於頂部腔室視窗安裝,同時將光源耦接到含有視窗的腔室門。Turning now to Figure 7, an assembly 230 in accordance with an embodiment of the present disclosure will be described in greater detail. As illustrated, the assembly 230 includes a platen 232, such as the platen 132 described above. As such, for the sake of brevity, only certain aspects of the platen 232 will be described below. The assembly 230 further includes one or more imaging devices 210, such as a camera or still camera, to ensure proper alignment between the mask 255 of the platen 232 and the workpiece 225. The imaging device 210 can be mounted adjacent to a window containing a chamber (not shown) of the platen 232. One or more light sources can be coupled to the chamber to enable imaging device 210 to adequately capture positional information of the elements of platen 232. For example, in one non-limiting embodiment, imaging device 210 can be mounted adjacent to the top chamber window while coupling the light source to the chamber door containing the window.

在一些實施例中,組合件230進一步包含作為裝置228的部分的處理元件224,如計算裝置。處理元件224與成像裝置210就位置和維度數據231通信以相對於設置準確度視窗內的蒙板255精確地放置工件225。舉例來說,處理元件224配置成識別工件225和蒙板255的視覺屬性,所述視覺屬性包含(但不限於)外觀、色彩、紋理、梯度、邊緣檢測、運動特性、形狀、空間位置等。根據位置和維度數據231的這些屬性,處理元件224配置成計算蒙板中心255。可單獨計算工件中心225,且隨後透過使蒙板中心255與工件中心225對準來將工件225引入到壓板216頂上、蒙板255下方的位置中。在一些實施例中,也可單獨計算壓板216的中心,其中在與蒙板255對準之前,首先使工件225與壓板216的中心對準。蒙板255、工件225和/或壓板216的位置和維度數據231可存儲在存儲裝置233內。In some embodiments, assembly 230 further includes processing elements 224, such as computing devices, that are part of device 228. Processing component 224 is in communication with imaging device 210 for position and dimension data 231 to accurately position workpiece 225 relative to mask 255 within the set accuracy window. For example, processing component 224 is configured to identify visual attributes of workpiece 225 and mask 255, including but not limited to appearance, color, texture, gradient, edge detection, motion characteristics, shape, spatial position, and the like. Based on these attributes of the location and dimension data 231, the processing component 224 is configured to calculate the mask center 255. The workpiece center 225 can be separately calculated and then the workpiece 225 can be introduced into the top of the platen 216, below the mask 255, by aligning the mask center 255 with the workpiece center 225. In some embodiments, the center of the platen 216 can also be calculated separately, with the workpiece 225 first aligned with the center of the platen 216 prior to alignment with the mask 255. The position and dimension data 231 of the mask 255, workpiece 225, and/or platen 216 may be stored in storage device 233.

在示範性實施例中,蒙板255保持附連到托架254,同時操控工件225到適當位置中。一旦工件225放置在壓板216頂上,成像裝置210便可例如透過在沿工件225的週邊的多個點處測量蒙板255的邊緣與工件225的邊緣之間的距離來再次觀測蒙板255相對於工件225的位置。處理元件224可隨後向離子植入系統100(圖1)的離子源發送指令以將離子束120傳輸到台板232。In the exemplary embodiment, mask 255 remains attached to bracket 254 while manipulating workpiece 225 into position. Once the workpiece 225 is placed atop the platen 216, the imaging device 210 can again observe the mask 255 relative to, for example, by measuring the distance between the edge of the mask 255 and the edge of the workpiece 225 at a plurality of points along the perimeter of the workpiece 225. The position of the workpiece 225. Processing component 224 can then send an instruction to the ion source of ion implantation system 100 (FIG. 1) to transmit ion beam 120 to platen 232.

應瞭解,裝置228可以是能夠接收、處理以及發送資訊以用於使工件225相對于蒙板255準確地定位的任何電子裝置。電子裝置的實例可包含而不限於電腦、個人電腦(personal computer;PC)、臺式電腦、膝上型電腦、筆記型電腦、上網本、手持型電腦、平板電腦、伺服器、伺服器陣列或伺服器集群、萬維網伺服器(web server)、網路服務器、網際網路伺服器以及工作站。電子裝置的實例還可包含大型電腦、超級電腦、網路設備、萬維網設備(web appliance)、分散式計算系統以及多處理器系統。電子裝置的實例還可包含基於處理器的系統、無線接入點、基站、訂戶站、無線電網路控制器、路由器、集線器、閘道、橋接器、切換器、機器或其組合。本文中的實施例並不限於這個上下文中。It should be appreciated that device 228 can be any electronic device capable of receiving, processing, and transmitting information for accurately positioning workpiece 225 relative to mask 255. Examples of electronic devices may include, without limitation, a computer, a personal computer (PC), a desktop computer, a laptop, a notebook, a netbook, a handheld computer, a tablet, a server, a server array, or a servo. Clusters, web servers, web servers, internet servers, and workstations. Examples of electronic devices may also include large computers, supercomputers, networking devices, web appliances, distributed computing systems, and multiprocessor systems. Examples of electronic devices may also include processor-based systems, wireless access points, base stations, subscriber stations, radio network controllers, routers, hubs, gateways, bridges, switches, machines, or combinations thereof. Embodiments herein are not limited in this context.

裝置228可使用處理元件224來執行處理操作或邏輯。處理元件224可包括各種硬體元件、軟體元件或硬體/軟體的組合。硬體元件的實例可包含裝置、邏輯裝置、元件、處理器、微處理器、電路、處理器電路、電路元件(例如電晶體、電阻器、電容器、電感器等等)、積體電路、專用積體電路(application specific integrated circuit;ASIC)以及可程式設計邏輯裝置(programmable logic device;PLD)。硬體元件的實例還可包含數位訊號處理器(digital signal processor;DSP)、現場可程式設計閘陣列(field programmable gate array;FPGA)、記憶體單元、邏輯門、寄存器、半導體裝置、晶片、微晶片、晶片組等等。軟體元件的實例可包含軟體元件、程式、應用、電腦程式、應用程式、系統程式、軟體發展程式、機器程式、作業系統軟體、中介軟體、固件、軟體模組、常式、子常式以及函數。軟體元件的實例還可包含方法、程式、軟體介面、應用程式介面(application program interface;API)、指令集、計算代碼、電腦代碼、程式碼片段、電腦程式碼片段、字、值、符號或其任何組合。判定實施例是否使用硬體元件和/或軟體元件來實施可視給定實施方案所需要根據多種因素而改變,如所要計算速率、功率電平、耐熱性、處理週期預算、輸入資料速率、輸出資料速率、記憶體資源、資料匯流排速率以及其它設計或性能限制。Device 228 can use processing element 224 to perform processing operations or logic. Processing component 224 can include various hardware components, software components, or a combination of hardware/software. Examples of hardware components can include devices, logic devices, components, processors, microprocessors, circuits, processor circuits, circuit components (eg, transistors, resistors, capacitors, inductors, etc.), integrated circuits, dedicated An application specific integrated circuit (ASIC) and a programmable logic device (PLD). Examples of the hardware component may further include a digital signal processor (DSP), a field programmable gate array (FPGA), a memory unit, a logic gate, a register, a semiconductor device, a chip, and a micro Wafers, wafer sets, and the like. Examples of software components may include software components, programs, applications, computer programs, applications, system programs, software development programs, machine programs, operating system software, mediation software, firmware, software modules, routines, sub-families, and functions. . Examples of software components can also include methods, programs, software interfaces, application program interfaces (APIs), instruction sets, calculation code, computer code, code segments, computer code segments, words, values, symbols, or Any combination. Determining whether an embodiment uses hardware components and/or software components to implement a given embodiment requires changes based on a number of factors, such as rate, power level, heat resistance, processing cycle budget, input data rate, output data. Rate, memory resources, data bus rate, and other design or performance limitations.

在一些實施例中,裝置228可使用通信元件(未繪示)來執行通信操作或位置測定。通信元件可實施任何公認通信技術和協議,如適合與包切換式網路(例如,如網際網路的公共網路、如企業內部網的私用網路等等)一起使用的技術。技術和協定可進一步適用於電路切換式網路(例如公共交換電話網絡)或包切換式網路與電路切換式網路的組合(具有適合的閘道和轉換器)。通信元件可包含不同類型的標準通信元件,如一或多種通信介面、網路介面、網路介面卡(network interface card;NIC)、無線電、無線發射器/接收器(收發器)、有線和/或無線通訊介質、物理連接器等等。借助於實例而非限制,通信介質可包含有線通信介質和無線通訊介質。有線通信介質的實例可包含電線、纜線、金屬引線、印刷電路板(printed circuit board;PCB)、背板、交換機結構、半導體材料、雙絞線電線、同軸纜線、光纖、傳播信號等等。無線通訊介質的實例可包含聲波、射頻(radio-frequency;RF)頻譜、紅外以及其它無線介質。裝置228可經由雲端與其它裝置(未繪示)通信。在一些實施例中,存儲裝置233包含易失性或非易失性記憶體,所述記憶體包含用於操作處理元件224的一組指令。In some embodiments, device 228 can use communication elements (not shown) to perform communication operations or position determination. The communication component can implement any recognized communication technology and protocol, such as a technology suitable for use with a packet switched network (e.g., a public network such as the Internet, a private network such as an intranet, etc.). The technologies and protocols can be further adapted to circuit switched networks (such as public switched telephone networks) or packet switched networks to circuit switched networks (with suitable gateways and converters). The communication component can include different types of standard communication components, such as one or more communication interfaces, a network interface, a network interface card (NIC), a radio, a wireless transmitter/receiver (transceiver), wired, and/or Wireless communication media, physical connectors, and more. Communication media may comprise wired communication media and wireless communication media by way of example and not limitation. Examples of wired communication media can include wires, cables, metal leads, printed circuit boards (PCBs), backplanes, switch structures, semiconductor materials, twisted pair wires, coaxial cables, fiber optics, propagated signals, and the like. . Examples of wireless communication media may include acoustic waves, radio frequency (RF) spectrum, infrared, and other wireless media. Device 228 can communicate with other devices (not shown) via the cloud. In some embodiments, storage device 233 includes volatile or non-volatile memory that includes a set of instructions for operating processing element 224.

現轉而參考圖8,將更詳細地描述用於提供根據本公開的實施例的工件邊緣處理的邏輯處理流程300。在301處,包含工件的機器人臂延伸到用於位置和維度數據觀測以及提取的相機下方的位置。在303處,工件中心使用相機來測定。在305處,調節臂位置以將工件放置在壓板經計算的中心中。在307處,作出對臂位置是否正確的判定。如果臂位置不正確,那麼再次測量工件中心。如果臂位置正確,那麼在309處,將工件放置在壓板上且將臂合攏/去除。在311處,相機向處理元件發送資料以驗證工件相對于蒙板的中心和/或壓板的中心正確地居中。在313處,作出對工件是否正確地居中的判定。如果工件未正確地居中,那麼在315處,臂將工件從壓板去除。如果工件中心正確,那麼滿足工件相對于蒙板的定位,且工件的處理可開始。Turning now to Figure 8, a logical process flow 300 for providing workpiece edge processing in accordance with an embodiment of the present disclosure will be described in greater detail. At 301, the robotic arm containing the workpiece extends to a position below the camera for position and dimensional data observation and extraction. At 303, the center of the workpiece is measured using a camera. At 305, the arm position is adjusted to place the workpiece in the calculated center of the platen. At 307, a determination is made as to whether the arm position is correct. If the arm position is not correct, measure the center of the workpiece again. If the arm is in the correct position, then at 309, the workpiece is placed on the platen and the arms are closed/removed. At 311, the camera sends data to the processing element to verify that the workpiece is properly centered relative to the center of the mask and/or the center of the platen. At 313, a determination is made as to whether the workpiece is properly centered. If the workpiece is not properly centered, then at 315, the arm removes the workpiece from the platen. If the center of the workpiece is correct, the positioning of the workpiece relative to the mask is satisfied and the processing of the workpiece can begin.

現轉而參考圖9,將更詳細地描述用於提供根據本公開的實施例的工件邊緣處理的邏輯處理流程400。在401處,將壓板耦接到台板的可旋轉組合件,所述壓板配置成固持工件。在一些實施例中,台板可包含耦接到彼此間隔開的兩個朝上延伸側臂的基座。可旋轉組合件以可旋轉方式附接到側臂。可旋轉組合件的中心區塊耦接在側臂之間。提供壓板以固持工件,所述壓板透過耦接到安裝板的壓板適配器板來耦接到中心區塊,其中壓板適配器板支撐壓板。Turning now to Figure 9, a logical process flow 400 for providing workpiece edge processing in accordance with an embodiment of the present disclosure will be described in greater detail. At 401, a platen is coupled to the rotatable assembly of the platen, the platen configured to hold the workpiece. In some embodiments, the platen can include a base coupled to two upwardly extending side arms that are spaced apart from one another. The rotatable assembly is rotatably attached to the side arms. The central block of the rotatable assembly is coupled between the side arms. A platen is provided to hold the workpiece, the platen being coupled to the central block by a platen adapter plate coupled to the mounting plate, wherein the platen adapter plate supports the platen.

在403處,提供附連到可旋轉組合件的托架。在一些實施例中,托架包含主體和穿過主體形成的中心開口166。設定中心開口尺寸以便包圍耦接到可旋轉組合件的中心區塊的安裝板。提供圍繞中心開口的托架的多個固定件開口以用於將主體緊固到中心區塊。托架進一步包含從主體延伸的延伸臂。延伸臂可遠離主體側向地延伸,例如沿平行於第二軸線的方向。延伸臂進一步包含外部末端處的支撐壁,所述支撐壁總體上垂直於主體定向,其中支撐壁直接耦接到蒙板。At 403, a bracket attached to the rotatable assembly is provided. In some embodiments, the bracket includes a body and a central opening 166 formed through the body. The central opening is sized to enclose a mounting plate that is coupled to the central block of the rotatable assembly. A plurality of fastener openings are provided around the centrally open bracket for securing the body to the central block. The bracket further includes an extension arm extending from the body. The extension arms can extend laterally away from the body, for example in a direction parallel to the second axis. The extension arm further includes a support wall at the outer end, the support wall being generally oriented perpendicular to the body, wherein the support wall is directly coupled to the mask.

在405處,蒙板定位成鄰近於壓板,其中所述蒙板覆蓋壓板的內部部分,從而使工件的僅外部周向邊緣暴露。在一些實施例中,蒙板直接耦接到托架。蒙板可透過耦接到托架的安裝部分支撐於遠離壓板的位置中,其中所述安裝部分從蒙板的板部分延伸。在示範性實施例中,蒙板可以使得壓板任意旋轉而不接觸蒙板或托架的方式附連到托架。At 405, the mask is positioned adjacent to the platen, wherein the mask covers an interior portion of the platen such that only the outer circumferential edge of the workpiece is exposed. In some embodiments, the mask is directly coupled to the carrier. The mask may be supported in a position away from the platen by a mounting portion coupled to the bracket, wherein the mounting portion extends from the plate portion of the mask. In an exemplary embodiment, the mask may be attached to the bracket in a manner that allows the platen to rotate arbitrarily without contacting the mask or bracket.

在407處,測定蒙板中心和工件中心。在一些實施例中,成像裝置(例如相機)可用以測定蒙板中心和工件中心。在一些實施例中,成像裝置與處理元件一起操作。接下來,在409處,工件定位在蒙板與壓板之間,其中蒙板中心與工件中心對準。At 407, the center of the mask and the center of the workpiece are measured. In some embodiments, an imaging device, such as a camera, can be used to determine the center of the mask and the center of the workpiece. In some embodiments, the imaging device operates with a processing element. Next, at 409, the workpiece is positioned between the mask and the platen with the center of the mask aligned with the center of the workpiece.

在411處,成像裝置和處理元件可驗證蒙板中心使用成像裝置與工件中心對準。在413處,可在工件和壓板相對于蒙板和托架旋轉時執行用以暴露工件的外部周向邊緣的離子處理。At 411, the imaging device and processing element can verify that the mask center is aligned with the center of the workpiece using the imaging device. At 413, ion processing to expose an outer circumferential edge of the workpiece can be performed as the workpiece and platen rotate relative to the mask and the carrier.

總的來說,本文中所描述的實施例可具有許多優勢。如上文所描述,許多半導體製程沿徑向方向呈現一些非均勻性。本文中所描述的方法有利地提供選擇性處理工件的外部部分的方式以補償和/或抵消這些不均勻性。此外,上文所描述的某些實施例有利地包含接近於例如安裝在頂部處理腔室視窗上的台板的相機。相機與處理元件的軟體一起操作以測定工件中心和蒙板。一旦工件處於機器人臂上,處理元件便將真實位置與理想位置進行比較且作出任何理想位置校正。可達到+-0.5毫米或更好的放置準確度。In general, the embodiments described herein can have many advantages. As described above, many semiconductor processes exhibit some non-uniformity in the radial direction. The methods described herein advantageously provide a way to selectively treat the outer portion of the workpiece to compensate for and/or counteract these inhomogeneities. Moreover, certain embodiments described above advantageously include a camera that is proximate to, for example, a platen mounted on a top processing chamber window. The camera operates with the software of the processing element to determine the center of the workpiece and the mask. Once the workpiece is on the robot arm, the processing element compares the real position to the ideal position and makes any ideal position correction. Can achieve placement accuracy of +-0.5 mm or better.

本公開的範圍不應受本文中所描述的特定實施例限制。實際上,根據以上描述和隨附圖式,除本文中所描述的那些實施例和修改之外本公開的其它各種實施例和修改對所屬領域的一般技術人員將顯而易見。因此,這類其它實施例以及修改意圖屬於本公開的範圍。此外,已在用於特定用途的特定環境中的特定實施方案的上下文中描述了本公開。所屬領域的一般技術人員將認識到,有用性不限於此,且本公開可有利地實施於用於多種用途的多種環境中。因此,應鑒於如本文中所描述的本公開的整個廣度和精神來理解以下所闡述的申請專利範圍。The scope of the disclosure should not be limited by the specific embodiments described herein. In addition, other various embodiments and modifications of the present disclosure will be apparent to those of ordinary skill in the art in Accordingly, such other embodiments and modifications are intended to be within the scope of the present disclosure. In addition, the present disclosure has been described in the context of specific embodiments in a particular environment for a particular use. One of ordinary skill in the art will recognize that usefulness is not limited in this regard, and that the present disclosure may be advantageously implemented in a variety of environments for a variety of uses. Therefore, the scope of the claims set forth below should be understood in view of the full breadth and spirit of the disclosure as described herein.

100‧‧‧射束線離子植入系統100‧‧‧beamline ion implantation system

101‧‧‧電源101‧‧‧Power supply

102‧‧‧離子源腔室102‧‧‧Ion source chamber

104‧‧‧提取電極104‧‧‧Extraction electrode

104a‧‧‧抑制電極104a‧‧‧Suppression electrode

104b‧‧‧接地電極104b‧‧‧Ground electrode

106‧‧‧品質分析儀106‧‧‧Quality Analyzer

108‧‧‧第一加速或減速台108‧‧‧First acceleration or deceleration table

110‧‧‧准直儀110‧‧ ‧collimator

112‧‧‧第二加速或減速台112‧‧‧Second acceleration or deceleration table

116、216‧‧‧壓板116, 216‧‧‧ pressure plate

120‧‧‧離子束120‧‧‧Ion Beam

125、225‧‧‧工件125, 225‧‧‧ workpiece

130、230‧‧‧組合件130, 230‧‧‧assemblies

132、232‧‧‧台板132, 232‧‧‧ board

134‧‧‧基座134‧‧‧Base

136‧‧‧側臂136‧‧‧ side arm

140‧‧‧可旋轉組合件140‧‧‧Rotatable assembly

142‧‧‧中心區塊142‧‧‧Central Block

144‧‧‧壓板適配器板144‧‧‧ platen adapter plate

145‧‧‧安裝板145‧‧‧Installation board

146‧‧‧軸線146‧‧‧ axis

149‧‧‧第二軸線149‧‧‧second axis

151‧‧‧表面151‧‧‧ surface

154、254‧‧‧托架154, 254‧‧‧ bracket

155、255‧‧‧蒙板155, 255‧‧‧ mask

156‧‧‧內部部分156‧‧‧ internal part

157‧‧‧蒙板組合件157‧‧‧ mask assembly

160‧‧‧安裝部分160‧‧‧Installation section

164‧‧‧主體164‧‧‧ Subject

166‧‧‧中心開口166‧‧‧ center opening

170‧‧‧固定件開口170‧‧‧Fixed parts opening

172‧‧‧延伸臂172‧‧‧Extension arm

174‧‧‧支撐壁174‧‧‧Support wall

176‧‧‧凸緣176‧‧‧Flange

177‧‧‧開口177‧‧‧ openings

178‧‧‧連杆178‧‧‧ Connecting rod

180‧‧‧鍵控部件180‧‧‧Key control parts

182‧‧‧板部分182‧‧‧ board section

185‧‧‧外部周向邊緣185‧‧‧External circumferential edge

210‧‧‧成像裝置210‧‧‧ imaging device

224‧‧‧處理元件224‧‧‧Processing components

228‧‧‧裝置228‧‧‧ device

231‧‧‧位置和維度數據231‧‧‧Location and dimension data

233‧‧‧存儲裝置233‧‧‧Storage device

300、400‧‧‧邏輯處理流程300, 400‧‧‧ logical processing flow

301、303、305、307、309、311、313、315‧‧‧流程301, 303, 305, 307, 309, 311, 313, 315 ‧ ‧ processes

401、403、405、407、409、411、413‧‧‧流程401, 403, 405, 407, 409, 411, 413 ‧ ‧ processes

H‧‧‧高度H‧‧‧ Height

r1、r2‧‧‧半徑R1, r2‧‧‧ radius

隨附圖式說明本公開的實例方法,所述實例方法包含本公開的原理的實際應用,圖式說明如下: 圖1是說明根據本公開的實施例的離子植入系統的示意圖。 圖2是說明根據本公開的實施例的設備的透視圖。 圖3是說明根據本公開的實施例的設備的側視圖。 圖4是說明根據本公開的實施例的設備的正視圖。 圖5是說明根據本公開的實施例的托架的透視圖。 圖6是說明根據本公開的實施例的蒙板和工件的俯視圖。 圖7是說明根據本公開的實施例的設備的示意圖。 圖8說明用於執行根據本公開的實施例的方法的流程圖。 圖9說明用於執行根據本公開的實施例的方法的流程圖。The example methods of the present disclosure are described with reference to the accompanying drawings, which illustrate the practical application of the principles of the present disclosure, which is illustrated as follows: FIG. 1 is a schematic diagram illustrating an ion implantation system in accordance with an embodiment of the present disclosure. 2 is a perspective view illustrating a device in accordance with an embodiment of the present disclosure. FIG. 3 is a side view illustrating an apparatus in accordance with an embodiment of the present disclosure. 4 is a front elevational view illustrating a device in accordance with an embodiment of the present disclosure. FIG. 5 is a perspective view illustrating a bracket in accordance with an embodiment of the present disclosure. FIG. 6 is a top plan view illustrating a mask and a workpiece in accordance with an embodiment of the present disclosure. FIG. 7 is a schematic diagram illustrating a device in accordance with an embodiment of the present disclosure. FIG. 8 illustrates a flow chart for performing a method in accordance with an embodiment of the present disclosure. FIG. 9 illustrates a flow chart for performing a method in accordance with an embodiment of the present disclosure.

圖式未必按比例繪製。圖式僅僅是表示,並不意圖描繪本公開的具體參數。圖式意圖描繪本公開的實例實施例,且因此並不視為對範圍的限制。在圖式中,相同標號表示相同元件。The drawings are not necessarily drawn to scale. The drawings are merely representations, and are not intended to depict specific parameters of the disclosure. The illustrations are intended to depict example embodiments of the present disclosure and are not to be considered as limiting. In the drawings, the same reference numerals indicate the same elements.

Claims (15)

一種設備,包括: 台板,包含可旋轉組合件; 壓板以及托架,連接到所述可旋轉組合件,所述壓板配置成固持工件;以及 蒙板,直接耦接到所述托架,其中所述蒙板定位成鄰近於所述壓板以覆蓋所述工件的內部部分且使所述工件的僅外部周向邊緣暴露以進行離子處理。An apparatus comprising: a platen comprising a rotatable assembly; a platen and a bracket coupled to the rotatable assembly, the platen configured to hold a workpiece; and a mask coupled directly to the bracket, wherein The mask is positioned adjacent to the platen to cover an interior portion of the workpiece and expose only an outer circumferential edge of the workpiece for ion processing. 如申請專利範圍第1項所述的設備,其中所述可旋轉組合件包括: 中心區塊,由側臂支撐,所述中心區塊包含安裝板;以及 壓板適配器板,耦接到所述安裝板,所述壓板適配器板支撐所述壓板。The apparatus of claim 1, wherein the rotatable assembly comprises: a central block supported by a side arm, the central block including a mounting plate; and a platen adapter plate coupled to the mounting a plate, the platen adapter plate supporting the platen. 如申請專利範圍第2項所述的設備,其中所述托架包圍所述安裝板。The apparatus of claim 2, wherein the bracket surrounds the mounting plate. 如申請專利範圍第1項所述的設備,其中所述可旋轉組合件進一步包括將所述中心區塊耦接到所述壓板適配器板的連杆,其中所述連杆延伸穿過所述安裝板以及所述托架。The apparatus of claim 1, wherein the rotatable assembly further comprises a link coupling the central block to the platen adapter plate, wherein the link extends through the mounting a plate and the bracket. 如申請專利範圍第4項所述的設備,其中所述連杆准許所述壓板相對於所述安裝板且相對於所述托架旋轉。The apparatus of claim 4, wherein the link permits rotation of the platen relative to the mounting plate and relative to the bracket. 如申請專利範圍第1項所述的設備,其中所述托架包括: 主體; 中心開口,穿過所述主體形成; 延伸臂,從所述主體延伸,所述延伸臂包含垂直於所述主體的定向的支撐壁。The apparatus of claim 1, wherein the bracket comprises: a body; a central opening formed through the body; an extension arm extending from the body, the extension arm comprising a body perpendicular to the body Oriented support walls. 如申請專利範圍第6項所述的設備,其中所述主體直接附連到可旋轉組合件。The device of claim 6, wherein the body is attached directly to the rotatable assembly. 如申請專利範圍第6項所述的設備,其中所述蒙板包括: 板部分,不含任何開口;以及 安裝部分,從所述板部分延伸,其中所述安裝部分直接耦接到所述延伸臂的所述支撐壁。The apparatus of claim 6, wherein the mask comprises: a plate portion without any opening; and a mounting portion extending from the plate portion, wherein the mounting portion is directly coupled to the extension The support wall of the arm. 如申請專利範圍第1項所述的設備,進一步包括: 成像裝置,鄰近於所述台板; 處理元件,與所述成像裝置通信,所述處理組件可操作以: 基於透過所述成像裝置所獲得的位置以及維度數據來計算所述蒙板的中心以及所述工件的中心;以及 使得所述蒙板的所述中心能夠與所述工件的所述中心對準。The apparatus of claim 1, further comprising: an imaging device adjacent to the platen; a processing component in communication with the imaging device, the processing component operable to: be based on transmitting through the imaging device The obtained position and dimension data are used to calculate the center of the mask and the center of the workpiece; and enable the center of the mask to be aligned with the center of the workpiece. 一種蒙板組合件,包括: 托架,附連到台板的可旋轉組合件;以及 蒙板,直接耦接到所述托架,其中所述蒙板定位成鄰近於支撐工件的壓板,且其中所述蒙板覆蓋所述工件的內部部分,從而使所述工件的僅外部周向邊緣暴露以進行離子處理。A mask assembly comprising: a bracket, a rotatable assembly attached to the deck; and a mask coupled directly to the bracket, wherein the mask is positioned adjacent to a pressure plate supporting the workpiece, and Wherein the mask covers an interior portion of the workpiece such that only the outer circumferential edge of the workpiece is exposed for ion processing. 如申請專利範圍第10項所述的蒙板組合件,其中所述托架包括: 主體; 中心開口,穿過所述主體形成;以及 延伸臂,從所述主體延伸,所述延伸臂包含垂直於所述主體定向的支撐壁。The mask assembly of claim 10, wherein the bracket comprises: a body; a central opening formed through the body; and an extension arm extending from the body, the extension arm including a vertical a support wall oriented to the body. 如申請專利範圍第11項所述的蒙板組合件,其中所述蒙板包括: 板部分,其中所述板部分是不含任何開口的固體、圓形形狀的材料片,且其中所述板部分的半徑小於所述晶片的半徑所述板部分的半徑小於所述晶片的半徑;以及 安裝部分,從所述板部分延伸,其中所述安裝部分直接耦接到所述延伸臂的所述支撐壁。The mask assembly of claim 11, wherein the mask comprises: a plate portion, wherein the plate portion is a solid, circular shaped piece of material that does not contain any openings, and wherein the plate a radius of the portion is less than a radius of the wafer; a radius of the plate portion is smaller than a radius of the wafer; and a mounting portion extending from the plate portion, wherein the mounting portion is directly coupled to the support of the extension arm wall. 一種方法,包括: 提供耦接到台板的可旋轉組合件的壓板,所述壓板配置成固持工件; 提供附連到所述可旋轉組合件的托架;以及 將蒙板定位成鄰近於所述壓板,其中所述蒙板直接耦接到所述托架,且其中所述蒙板覆蓋所述壓板以及所述工件的內部部分,從而使所述工件的僅外部周向邊緣暴露以進行離子處理。A method comprising: providing a platen coupled to a rotatable assembly of a platen, the platen configured to hold a workpiece; providing a bracket attached to the rotatable assembly; and positioning the mask adjacent to the a pressure plate, wherein the mask is directly coupled to the bracket, and wherein the mask covers the pressure plate and an inner portion of the workpiece such that only an outer circumferential edge of the workpiece is exposed for ionization deal with. 如申請專利範圍第13項所述的方法,進一步包括: 測定所述蒙板的中心以及所述工件的中心; 將所述工件定位于所述蒙板與所述壓板之間,其中所述蒙板的所述中心與所述工件的所述中心對準;以及 一旦所述蒙板的所述中心與所述工件的所述中心對準,便對所述工件的所述暴露的外部周向邊緣執行離子處理,其中所述工件以及所述壓板在所述離子處理期間相對于所述蒙板以及所述托架旋轉。The method of claim 13, further comprising: determining a center of the mask and a center of the workpiece; positioning the workpiece between the mask and the platen, wherein the The center of the plate is aligned with the center of the workpiece; and the exposed outer circumference of the workpiece once the center of the mask is aligned with the center of the workpiece The edge performs ion treatment wherein the workpiece and the platen rotate relative to the mask and the carrier during the ion treatment. 如申請專利範圍第14項所述的方法,進一步包括使用成像裝置來驗證所述蒙板的所述中心與所述工件的所述中心的對準。The method of claim 14, further comprising using an imaging device to verify alignment of the center of the mask with the center of the workpiece.
TW107115494A 2017-05-25 2018-05-08 Mask assembly, apparatus and method for edge treatment TW201901743A (en)

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JP2004095906A (en) 2002-08-30 2004-03-25 Nsk Ltd Device and method for alignment
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
US20080073569A1 (en) * 2006-09-23 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Mask position detection
US9558980B2 (en) 2008-04-30 2017-01-31 Axcelis Technologies, Inc. Vapor compression refrigeration chuck for ion implanters
WO2010030645A2 (en) * 2008-09-10 2010-03-18 Varian Semiconductor Equipment Associates, Inc. Techniques for manufacturing solar cells
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US9583309B1 (en) * 2015-12-17 2017-02-28 Varian Semiconductor Equipment Associates, Inc. Selective area implant of a workpiece

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