TW201842588A - Method and chamber room for rapid thermal processing - Google Patents

Abstract

An embodiment of the present disclosure illustrates a method for rapid thermal processing having steps as follows. Firstly, a chamber room is provided, and a material substrate is supported by a material substrate support structure in the chamber room. Next, reaction gas is introduced into the chamber room, wherein the reaction gas is introduced from a lateral side and an upper side of the material substrate simultaneously or at different times, and the reaction gas flows above an upper surface of the material substrate in a horizontal direction and a direction from top to bottom, so as to react at the upper surface of the material substrate.

Description

Method and reaction chamber for rapid heating process

The present invention relates to a method and reaction chamber for a semiconductor process, and more particularly to a method and reaction chamber for Rapid Thermal Processing (RTP).

In the gate oxidation process, a ruthenium dioxide layer is first grown on the ruthenium wafer as a substrate, and then ammonia gas (NH ₃ ) is introduced as a reaction gas on the surface of the ruthenium dioxide layer. Nitriding to obtain a lower gate dielectric layer of Equivalent Oxide Thickness (EOT).

The above gate oxidation process can be implemented in a rapid heating process. In the prior art, ammonia gas is introduced from the side of the tantalum wafer, and ammonia gas flows horizontally from the upper surface of the tantalum wafer, and is nitrided with the upper surface of the tantalum dioxide layer of the tantalum wafer. However, since ammonia gas is only introduced from the side of the wafer, the nitridation reaction of ammonia gas on the germanium wafer is uneven, resulting in the degree of nitridation of the gate dielectric layer (that is, the formation of nitrogen oxides by the oxide). Quantity) There is a big difference. Therefore, the level of nitridation of the gate dielectric layer at the edge of the germanium wafer is higher, but the degree of nitridation of the gate dielectric layer at the center of the germanium wafer is lower.

In US Pat. No. 8,980,767 B2, the reaction chamber introduces a reaction gas from the side and the bottom surface of the substrate as a substrate to respectively contact the upper surface and the lower surface of the substrate, but the reaction gas is still on the upper surface and the lower surface of the substrate. The surface flows in a horizontal direction. U.S. Patent No. 8,980,767 B2 is used to solve the technical problem that the deposition material is excessively deposited in the reaction chamber and requires time to clean up, resulting in a decrease in production efficiency, but it still does not solve the technical problem of uneven reaction degree between the reaction gas and the substrate. .

In view of the above technical problems of the prior art, one of the objects of the present invention is to provide a method and a reaction chamber for a rapid heating process, through which the substrate in the reaction chamber can be uniformly and introduced through the method or the reaction chamber of the present invention. The reaction gas reaction, that is, the degree of reaction with the reaction gas at the center and the edge of the substrate does not vary much.

Embodiments of the present invention provide a method for a rapid heating process, the method of the rapid heating process having the following steps. First, a reaction chamber is provided and the substrate support structure supports the substrate within the reaction chamber. Next, a reaction gas is introduced into the reaction chamber, wherein the reaction gas system is introduced simultaneously or time-divisionally from the side surface of the substrate, and the reaction gas flows in a horizontal direction and a flow direction from the top to the bottom at the upper surface of the substrate. To carry out the reaction at the surface above the substrate.

Embodiments of the present invention also provide a reaction chamber for a rapid heating process, the reaction chamber including an internal chamber, a substrate support structure, and a reactive gas introduction structure. The internal chamber consists of a plurality of walls and a door. The substrate support structure is located within the interior chamber and can be used to support the substrate fed by the door. The reaction gas introduction structure is configured to introduce a reaction gas into the internal chamber, wherein the reaction gas introduction structure has a plurality of first introduction holes and a plurality of second introduction holes, so that the reaction gas system is introduced from the side surface and the upper surface of the substrate, and The reaction gas flows in the horizontal direction at the upper surface of the substrate and flows from the top to the bottom to carry out the reaction at the upper surface of the substrate.

In the embodiment of the present invention, the substrate may be a germanium wafer, the germanium wafer has a germanium dioxide layer, and the reaction gas is ammonia gas.

In the embodiment of the present invention, the above reaction gas system is simultaneously introduced from the side surface and the upper surface of the substrate.

In an embodiment of the invention, the reaction gas system is introduced from the side and top of the substrate in a time-sharing manner.

In the embodiment of the present invention, the amount of the reaction gas introduced from the side surface of the substrate and the upper surface may be different.

In the embodiment of the present invention, after continuously introducing the reaction gas into the reaction chamber and after a first time, rapid heating is performed to raise the temperature in the reaction chamber to a specific temperature, and the temperature in the reaction chamber rises to a specific temperature and passes through After the second time, cooling is performed.

In the embodiment of the present invention, the first time and the second time are respectively a purge time and a soak time, and the ratio may be 1 to 1.1.

In summary, according to the method for the rapid heating process and the reaction chamber provided by the embodiment of the present invention, the substrate in the reaction chamber can uniformly react with the introduced reaction gas. As a result, there is no technical problem that the degree of reaction between the center and the edge of the substrate of the prior art is very different from that of the reaction gas. Since the degree of reaction at the center and the edge of the substrate is not much different, the finished product will have better uniformity and more similar physical properties.

The technical features, contents, and advantages of the present invention, as well as the advantages thereof, can be understood by the present inventors, and the present invention will be described in detail with reference to the accompanying drawings. The subject matter is only for the purpose of illustration and supplementary description. It is not necessarily the true proportion and precise configuration after the implementation of the present invention. Therefore, the scope and configuration relationship of the attached drawings should not be limited to the scope of patent application of the present invention. Narration.

It should be noted that although the terms "first", "second", "third" and the like are used herein to describe various elements, these described elements should not be limited by such terms. Such terms are only used to distinguish one element from another. Therefore, the "first" elements discussed below can be written as "second" elements without departing from the teachings of the present invention. Furthermore, the term "a" is not limited to "one" in the general case, and the technical field to which the present invention pertains has circumstances and variations in which a person of ordinary skill can think of "multiple".

Embodiments of the present invention provide a method and a reaction chamber for a rapid heating process, wherein a reaction gas is introduced into a reaction chamber to cause a reaction gas to flow in a horizontal direction and a top-down direction at a surface above the substrate. Thereby, the substrate in the reaction chamber can be uniformly reacted with the reaction gas.

In one embodiment, the substrate may be a germanium wafer and the reactive gas may be ammonia. Further, ammonia gas may be introduced from the side and the top surface of the germanium wafer to contact the upper surface of the wafer, wherein ammonia gas flows in a horizontal direction and a top-down direction at the upper surface of the germanium wafer to make ammonia The nitriding reaction of the gas on the upper surface of the wafer is more uniform, thereby obtaining a gate dielectric layer having a relatively uniform thickness. Please note that the present invention is not limited by the type of substrate and reaction gas. In other cases, such as the fabrication of a panel, the substrate may be a glass substrate, and the reaction gas may be nitrogen or oxygen.

First, please refer to Fig. 1. The first figure is a schematic view of a reaction chamber for a rapid heating process according to an embodiment of the present invention. As shown in FIG. 1, the reaction chamber 1 for the rapid heating process includes an internal chamber 11, a substrate supporting structure 12, and a reaction gas introduction structure 13. The reaction chamber 1 may be manufactured by a Mattson ^® Technology Helios XP produced by the reaction chamber to be configured to achieve a step, however, the present invention is not limited thereto.

The internal chamber 11 is composed of a plurality of walls 11W and a door 11D, wherein the wall 11W may include four walls up, down, left and right, the door 11D may be disposed on one side of the internal chamber 11, for example, the left side, and the door 11D may be The control is closed or opened to enable the substrate SUB to enter and exit the internal chamber 11. The inner upper surface and the inner lower surface of the inner chamber 11 have a plurality of heating lamp sources LP for performing a rapid heating process to raise the temperature of the inner chamber 11 to a specific temperature. In addition, the internal chamber 11 may have a cooling element (not shown) for cooling the internal chamber 11 and a vacuum pump for extracting the gas of the internal chamber 11 without loss of generality. Pieces (not shown in the figure).

The substrate support structure 12 is disposed within the interior chamber 11 and is coupled to a portion of the inner lower surface of the interior chamber 11. The substrate support structure 12 can be used to support the aforementioned substrate SUB. Without loss of generality, the substrate SUB is first supported by a substrate transfer member (not shown) and moved by the substrate transfer member to the vicinity of the door 11D. After the door 11D is opened, the substrate SUB is sent to the top of the substrate support structure 12 and supported by the substrate support structure 12. After the processing of the substrate SUB is completed in the reaction chamber 1, the door 11D is opened again, and the substrate transporting member takes out the substrate SUB in the internal chamber 11. In addition, the substrate supporting structure 12 is capable of rotating to rotate the substrate SUB horizontally (i.e., with the vertical axis as the axis of rotation).

The reaction gas introduction structure 13 includes a plurality of first introduction holes 131 (Note: FIG. 1 is a cross-sectional view, so only one first introduction hole 131 is seen), a plurality of second introduction holes 132, a baffle plate 133, and a controllable gas. Valve 134. The controllable gas valve 134 is connected to the reaction gas source 14 through a pipeline. Through the control of the controllable gas valve 134, the reaction gas selectively enters the first introduction hole 131 and/or penetrates the side of the barrier plate 133 into the second introduction hole 132. . When the reaction gas is allowed to enter the first introduction hole 131 by the control, the reaction gas enters the reaction chamber from the side of the substrate SUB, and flows horizontally at the upper surface of the substrate SUB to be on the upper surface of the substrate SUB. The reaction takes place. The second introduction hole 132 is disposed in the baffle plate 133. Through such a design, when the controllable gas valve 134 is controlled to allow the reaction gas to flow from the side surface of the baffle plate 133, the reaction gas can pass through the second introduction hole 132 to be The downward direction flows toward the upper surface of the substrate SUB to carry out the reaction at the upper surface of the substrate SUB.

Briefly, the reaction gas introduction structure 13 is for introducing a reaction gas into the internal chamber 11, wherein the reaction gas introduction structure 13 has a plurality of first introduction holes 131 and a plurality of second introduction holes 132 to allow the reaction gas SUB to be The side surface of the substrate is introduced into the upper surface, and the reaction gas flows in a horizontal direction and a top-down direction at the upper surface of the substrate SUB to carry out a reaction at the upper surface of the substrate SUB.

In the above embodiments, the substrate SUB may be a germanium wafer having a germanium dioxide layer on the germanium wafer and the reaction gas being ammonia gas to form a gate dielectric layer on the germanium wafer. The reaction gas may be introduced simultaneously from the side surface and the upper surface of the substrate SUB, or may be introduced from the side surface and the upper surface of the substrate SUB in a time-sharing manner. Further, in some cases, the controllable gas valve 134 can more control the amount of the introduced reaction gas so that the amount of the reaction gas introduced from the side of the substrate SUB and the above can be different.

The reaction gas system is continuously introduced into the internal chamber 11 of the reaction chamber 1 for a first period of time. Then, after the introduction of the reaction gas is stopped, rapid heating is performed by the heating lamp source LP to raise the temperature of the internal chamber 11 to a specific temperature, and the temperature of the internal chamber 11 rises to a specific temperature and after a second time, the cooling is performed. The reaction of the reaction gas with the upper surface of the substrate SUB is completed. The first time and the second time are the injection time and the infiltration time, respectively. In addition, in the case where the substrate SUB is a germanium wafer, the germanium wafer has a germanium dioxide layer, and the reaction gas is ammonia gas, the ratio of the first time to the second time may preferably be 1 to 1.1, but The present invention is not limited to the above proportional relationship.

Next, please refer to Fig. 2, which is a schematic view showing the flow direction of the reaction gas in the embodiment of the present invention. As shown in FIG. 2, through the structure of the reaction chamber 1 of FIG. 1, the first introduction hole 131 allows the reaction gas H_GAS flowing in the horizontal direction to flow through the upper surface of the substrate SUB and through the second introduction. The hole 132 allows the reaction gas V_GAS flowing in the direction from the top to the bottom to flow toward the upper surface of the substrate SUB. In this way, the problem that the reaction of the reaction gas and the upper surface of the substrate SUB is not uniform can be solved in the prior art.

Thereafter, please refer to FIG. 3, which is a flow chart of a method for a rapid heating process according to an embodiment of the present invention. In this embodiment, the method for the rapid heating process can be realized by the reaction chamber 1 of Fig. 1, but the invention is not limited thereto.

First, in step 31, a reaction chamber is provided and the substrate support structure support substrate within the reaction chamber. Next, in step 32, the reaction gas is introduced into the internal chamber of the reaction chamber, wherein the reaction gas system is introduced simultaneously or time-divisionally from the side of the substrate and the reaction gas is horizontally at the upper surface of the substrate. The direction flows and flows from the top to the bottom to react at the upper surface of the substrate.

In order to understand the difference in efficacy between the prior art and the present invention, in the embodiment of the present invention, the substrate is selected as a germanium wafer having a ceria layer on the upper surface thereof, and the reaction gas is selected to be ammonia gas to form a gate dielectric. Electrical layer. Since the degree of nitridation cannot be obtained by optically measuring the thickness (Note: the thickness of the gate dielectric layer is not thickened or thinned due to the difference in the degree of nitridation), so the embodiment of the present invention selects the gate to be formed. After the dielectric layer, oxygen is intentionally introduced into the reaction chamber, and the thickness of the oxide is formed in the gate dielectric layer by oxygen to observe whether the reaction is uniform. In general, since the oxide growth rate is extremely slow in a region where the degree of nitridation is high, the oxide growth rate is fast in a region where the degree of nitridation is low, so that the thickness of the final oxide may be different. The result is a thin edge and a thick center, which represents a high degree of nitridation at the edge of the germanium wafer and a low degree of nitridation at the center of the germanium wafer.

Through the above measurement method, if the prior art is used, it is found that the thickness of the oxide at the edge of the germanium wafer is very different from that of the center, and the thickness of the oxide at the edge of the germanium wafer is much smaller than the center of the germanium wafer. The thickness of the oxide, that is, the degree of nitridation is not uniform. However, through the method for the rapid heating process and the reaction chamber of the embodiment of the present invention, it is found that the thickness of the oxide at the edge of the germanium wafer is not much different from that at the center, that is, the degree of nitridation is relatively uniform.

In summary, according to the method for the rapid heating process and the reaction chamber provided by the embodiment of the present invention, the substrate in the reaction chamber can uniformly react with the introduced reaction gas. As a result, there is no technical problem that the degree of reaction between the center and the edge of the substrate of the prior art is very different from that of the reaction gas. Since the degree of reaction at the center and the edge of the substrate is not much different, the finished product will have better uniformity and more similar physical properties.

The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

1‧‧‧reaction chamber

11‧‧‧Internal chamber

11W‧‧‧Wall

11D‧‧‧ Door

12‧‧‧Substrate support structure

13‧‧‧Reactive gas introduction structure

131‧‧‧First introduction hole

132‧‧‧Second introduction hole

133‧‧‧Baffle

134‧‧‧Controllable air valve

14‧‧‧Responsive gas source

H_GAS‧‧‧Reactive gas flowing in horizontal direction

LP‧‧‧heating light source

31, 32‧‧‧ steps

SUB‧‧‧Substrate

V_GAS‧‧‧Reactive gas flowing in the direction from top to bottom

Figure 1 is a schematic illustration of a reaction chamber for a rapid heating process in accordance with an embodiment of the present invention.

Fig. 2 is a schematic view showing the flow direction of the reaction gas in the embodiment of the present invention.

Figure 3 is a flow chart of a method for a rapid heating process in accordance with an embodiment of the present invention.

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Claims (10)

A method for a rapid heating process, comprising: providing a reaction chamber, and supporting a substrate supporting structure in the reaction chamber; and introducing a reaction gas into the reaction chamber, wherein the reaction gas system Simultaneously or time-divisionally introduced from the side and the top surface of the substrate, and the reactive gas flows in a horizontal direction and in a direction from the top to the bottom at the upper surface of the substrate to be performed at the upper surface of the substrate. reaction. The method for the rapid heating process of claim 1, wherein the substrate is a germanium wafer having a germanium dioxide layer thereon, and the reaction gas is ammonia gas. The method for the rapid heating process of claim 1, wherein the amount of the reaction gas introduced from the side of the substrate and from above is different from each other. The method for the rapid heating process of claim 1, wherein after continuously introducing the reaction gas into the reaction chamber and after a first time, the method further comprises: performing rapid heating to make the reaction chamber The temperature rises to a specific temperature; and the temperature of the reaction chamber rises to the specific temperature and after a second period of time, the cooling is performed. The method for the rapid heating process of claim 4, wherein the first time and the second time are respectively an injection time and an infiltration time, and the ratio of the two is 1 to 1.1. A reaction chamber for a rapid heating process, comprising: an internal chamber composed of a plurality of walls and a door; a substrate support structure located in the internal chamber for supporting the feed from the door a substrate; and a reaction gas introduction structure for introducing a reaction gas into the internal chamber, wherein the reaction gas introduction structure has a plurality of first introduction holes and a plurality of second introduction holes to allow the reaction gas system to The side surface of the substrate is introduced into the upper surface, and the reaction gas flows in a horizontal direction and a direction from the top to the bottom at the upper surface of the substrate to carry out a reaction at the upper surface of the substrate. The reaction chamber for a rapid heating process according to claim 6, wherein the substrate is a germanium wafer having a germanium dioxide layer thereon, and the reaction gas is ammonia gas. The reaction chamber for the rapid heating process of claim 6, wherein the reaction gas system is introduced simultaneously or simultaneously from the side and the substrate. The reaction chamber for the rapid heating process of claim 6, wherein the amount of the reaction gas introduced from the side of the substrate to the top may be different. The reaction chamber for the rapid heating process of claim 6, wherein after the reaction gas is continuously introduced into the reaction chamber and after a first time, rapid heating is performed to raise the temperature in the reaction chamber. To a specific temperature; and after the temperature of the reaction chamber rises to the specific temperature and after a second time, cooling is performed; wherein the first time and the second time are respectively an injection time and an infiltration time, And the ratio of the two is 1 to 1.1.