TW201842527A - Apparatus for controlling thermal distortion of suppression electrode and controlling uniformity of ion beam - Google Patents

Abstract

An apparatus for controlling thermal distortion of a suppression electrode and controlling uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.

Description

Device and method for reducing thermal deformation by using ion source in electrode

Embodiments relate to a device and method for minimizing thermal deformation of an electrode close to an ion source, and more specifically, a device for heating a portion of an electrode to compensate for heat generated by an extracted ion beam.

Ions are used in a variety of semiconductor processes, such as implantation, amorphization, deposition, and etching processes. These ions can be generated in the ion source chamber and extracted through an extraction orifice in the ion source chamber.

Ions can be attracted through an extraction orifice by an optical system provided outside the ion source chamber and close to the ion source chamber. A typical optical element for an ion source includes an extraction electrode, which may be a wall of an ion source chamber containing an extraction aperture. Other optical elements include suppression electrodes and ground electrodes. The suppression electrode can be electrically biased to attract ions generated in the ion source chamber. For example, the suppression electrode may be negatively biased to attract positive ions from the ion source chamber. In some embodiments, with the addition of a focusing lens and an additional ground electrode, there may be up to five electrodes.

The electrodes may each be a single conductive component with an aperture provided therein. Alternatively, each electrode may include two elements spaced apart to form an aperture between the two elements. In both embodiments, the ion beam passes through an aperture in each electrode. The portion of the electrode disposed near the aperture may be referred to as an optical edge. The portion of the electrode furthest from the orifice may be referred to as the distal edge.

It is not uncommon for a portion of the ion beam extracted from the ion source chamber to hit the suppression electrode, causing it to heat up along the optical edge. However, not all parts of the suppression electrode are equally affected by the extracted ions. Therefore, the suppression electrode can be heated unevenly by these extracted ions.

In some embodiments, suppressing uneven heating of the electrode can be difficult to resolve. This problem can be exacerbated as the length of the suppression electrode increases. Therefore, it would be advantageous if devices and methods exist to compensate or control the thermal deformation caused by this uneven heating.

A device for improving the uniformity of an ion beam is disclosed. The device includes a heating element that heats the edge of the suppression electrode located furthest from the suppression orifice. In operation, the edge of the suppression electrode closest to the suppression electrode may be heated by the ion beam. This heating can suppress electrode deformation and affect the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal deformation of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to produce a more uniform ion beam. By monitoring the uniformity of the ion beam downstream of the suppression electrode, such as by using a beam uniformity plotter, the controller can adjust the heat applied to the distal edge to achieve the desired uniformity of the ion beam.

According to one embodiment, a device for controlling thermal deformation of an electrode is disclosed. The device includes: an ion source having a plurality of chamber walls defining an ion source chamber and having an extraction aperture; a suppression electrode provided outside the ion source chamber and having a suppression aperture, an optical edge disposed near the suppression aperture, and a setting A distal edge furthest from the suppression orifice; a heating element to heat the distal edge of the suppression electrode; a heater power source to supply power to the heating element; and a controller in communication with the heater power source In order to control the temperature of the distal edge of the suppression electrode. In some embodiments, the controller utilizes open-loop control to control the temperature of the distal edge of the suppression electrode. In some embodiments, the heating element is disposed on the suppression electrode. In other embodiments, the heating element is not in direct contact with the suppression electrode. In some embodiments, the heating element includes an LED or a heating lamp. In some embodiments, the device includes a thermal sensor in communication with the controller to measure a temperature of at least a portion of the suppression electrode. In some embodiments, a thermal sensor may be used to measure the temperature of the optical edge and the controller controls the temperature of the distal edge based on the temperature of the optical edge. In some embodiments, a thermal sensor is used to measure the temperature of the optical edge and the distal edge, and the controller controls the temperature of the distal edge based on the temperature difference between the optical edge and the distal edge. In some embodiments, a thermal sensor is disposed on the suppression electrode. In other embodiments, the thermal sensor is not in direct contact with the suppression electrode.

According to another embodiment, an apparatus for controlling the uniformity of an ion beam is disclosed. The device includes: an ion source having a plurality of chamber walls defining an ion source chamber and an extraction aperture for extracting an ion beam; a suppression electrode, which is provided outside the ion source chamber and has a suppression aperture arranged near the suppression aperture; Optical edge and distal edge located farthest from the suppression aperture; heating element for heating the distal edge of the suppression electrode; heater power supply for supplying power to the heating element; beam uniformity mapping instrument , Which is disposed downstream of the suppression electrode; and a controller, which is in communication with the heater power source, wherein the controller uses information from the beam uniformity mapping device to control the uniformity of the ion beam by heating the distal edge of the suppression electrode degree. In some embodiments, the beam uniformity mapping device includes a plurality of current or charge collectors arranged to determine the current or charge of the ion beam as a function of the X-Y position.

According to another embodiment, an apparatus for controlling the uniformity of an ion beam is disclosed. The device includes a suppression electrode, which is provided outside the ion source chamber and has a suppression aperture, an optical edge disposed near the suppression aperture, and a distal edge disposed farthest from the suppression aperture, so that ions from the ion source penetrate An over-suppression orifice; a heating element to heat the distal edge of the suppression electrode; and a heater power source to provide power to the heating element. In some embodiments, the heating element includes a resistive element. In other embodiments, the heating element includes an LED or a heating lamp.

FIG. 1 illustrates a first embodiment of a device that can be used to control thermal deformation of the electrode 200. In this embodiment, the RF ion source 100 is explained. The RF ion source 100 includes a plurality of chamber walls 111 that define an ion source chamber 110. The RF antenna 120 may be disposed in the ion source chamber 110. The RF antenna 120 may include a conductive material, such as copper. The RF antenna 120 may be enclosed in a hollow tube 125, which may be made of a dielectric material such as quartz. The RF power source 130 is in electrical communication with the RF antenna 120. The RF power source 130 may supply an RF voltage to the RF antenna 120. The power supplied by the RF power source 130 may be between 0.5 kW and 60 kW and may be any suitable frequency, such as between 5 MHz and 15 MHz. In addition, the power supplied by the RF power source 130 may be pulsed.

Although the drawing illustrates the RF antenna 120 enclosed in a hollow tube 125 within the ion source chamber 110, other embodiments are possible. For example, one of the chamber walls 111 may be made of a dielectric material and the RF antenna 120 may be disposed outside the ion source chamber 110 near the dielectric wall. In yet other embodiments, the plasma is generated in different ways, such as by a Bernas ion source or an indirectly heated cathode (IHC). The manner in which the plasma is generated is not limited to the present disclosure.

In some embodiments, the chamber wall 111 may be conductive and may be composed of metal. In some embodiments, the chamber walls 111 may be electrically biased. In some embodiments, the chamber wall 111 may be grounded. In other embodiments, the chamber wall 111 may be biased to a voltage by a bias power source 140. In some embodiments, the bias voltage may be a constant (DC) voltage. In other embodiments, the bias voltage may be pulsed. The bias voltage applied to the chamber wall 111 establishes the potential of the plasma within the ion source chamber 110. The difference between the potential of the plasma and the potential of the suppression electrode 200 determines the energy possessed by the extracted ions.

One chamber wall, referred to as the extraction electrode 112, contains an extraction orifice 115. The extraction orifice 115 may be an opening in which ions generated in the ion source chamber 110 are extracted and guided toward the workpiece 10. The extraction orifice 115 may be any suitable shape. In some embodiments, the extraction aperture 115 may be oval or rectangular in shape, having one dimension called a length, which may be much larger than a second dimension called a height. In some embodiments, the length of the extraction orifice 115 may be up to two meters or more. In some embodiments, only the extraction electrode 112 is conductive and is in communication with the bias power source 140. The remaining chamber walls 111 may be made of a dielectric material. In other embodiments, the extraction electrode 112 and the entire chamber wall 111 may be conductive. The bias power supply 140 may bias the extraction electrode 112 to a voltage between 1 kV and 5 kV, but other voltages are also within the scope of the present disclosure.

Provided outside the extraction orifice 115 and close to the extraction orifice 115 is a suppression electrode 200. The suppression electrode 200 may be a single conductive component in which a suppression aperture 205 is provided. Alternatively, the suppression electrode 200 may include two conductive elements spaced apart to form a suppression aperture 205 between the two elements. The suppression electrode 200 may be a metal such as titanium. The suppression electrode 200 can be biased electrically using the suppression power supply 220. The suppression electrode 200 may be biased to be more negative than the extraction electrode 112. In some embodiments, the suppression electrode 200 is negatively biased by a suppression power source 220 such as a voltage between -3 kV and -15 kV.

The proximity suppression electrode 200 may be provided with a ground electrode 210. Similar to the suppression electrode 200, the ground electrode 210 may be a single conductive component in which the ground aperture 215 is provided, or may include two elements spaced apart to form the ground aperture 215 between the two elements. The ground electrode 210 may be electrically connected to be grounded. Of course, in other embodiments, the ground electrode 210 may be biased using a separate power source. The extraction aperture 115, the suppression aperture 205, and the ground aperture 215 are all aligned.

The workpiece 10 is located downstream of the ground electrode 210. In some embodiments, as shown in FIGS. 1, 3, 4, and 5, the workpiece 10 is located immediately after the ground electrode 210. In other embodiments, additional elements such as a mass analyzer, a collimation magnet, an acceleration stage, and an acceleration and deceleration stage may be disposed between the ground electrode 210 and the workpiece 10.

In operation, the feed gas from the gas storage container 150 is introduced into the ion source chamber 110 through the air inlet 151. The RF antenna 120 is powered by an RF power source 130. This energy excites the feed gas, resulting in the generation of a plasma. The ions in the plasma are usually positively charged. Because the suppression electrode 200 is more negatively biased than the extraction electrode 112, ions are emitted through the extraction aperture 115 in the form of an ion beam 1. The ion beam 1 passes through the extraction aperture 115, the suppression aperture 205, and the ground aperture 215 and travels toward the workpiece 10.

A portion of the suppression electrode 200 provided close to the suppression aperture 205 in the height dimension may be referred to as an optical edge. The portion of the suppression electrode 200 that is furthest from the suppression orifice 205 in height dimension may be referred to as the distal edge.

The ions from the ion beam 1 extracted through the extraction hole 115 may hit the suppression electrode 200 which is generally close to the optical edge. As the optical edge of the suppression electrode 200 is heated due to the impact of ions, the length of the suppression electrode 200 may increase. This increase in length may be determined based on the thermal expansion coefficient of the material used to form the suppression electrode 200. However, the increase in length may not be equal across the suppression electrode 200. For example, due to the thermal resistivity of the material used to constitute the suppression electrode 200, the distal edge of the suppression electrode 200 that is not directly hit by ions may not be as hot as the optical edge of the suppression electrode 200. This causes the optical edge of the suppression electrode 200 to expand beyond the distal edge, which causes the suppression electrode 200 to distort or deform.

FIG. 2A illustrates a suppression electrode 200 composed of two components 201a, 201b. The gap between the two components 201a, 201b defines a suppression orifice 205. Before the ion beam 1 is extracted, the two components 201a, 201b are not deformed, so that the optical edges 202a, 202b of the two components 201a, 201b are parallel to each other, respectively.

As the ion beam 1 is extracted, the ions hit the optical edges 202a, 202b of the components 201a, 201b, which causes these optical edges to swell. However, as described above, the distal edges 203a, 203b of the components 201a, 201b may not swell to the same extent due to differences in temperature. Therefore, deformation of the electrode 200 is suppressed as shown in FIG. 2B. This deformation is exaggerated for illustrative purposes. In this illustration, the optical edges 202a, 202b have been expanded to cause distortion of each component 201a, 201b. In some embodiments, the middle portion of each optical edge 202a, 202b is curved in length toward the other optical edge 202a, 202b. This causes the shape of the suppression orifice 205 to be irregular, so that the suppression orifice 205 can be narrower in length in the middle portion than at the outer portion. Therefore, the beam current of the ion beam 1 becomes non-uniform as a function of length, which may be difficult to resolve. In addition, as the length of the suppression electrode 200 increases, deformation caused by thermal expansion may increase.

To compensate for this unwanted deformation, the heating element 310 may be used to heat the distal edge of the suppression electrode 200.

FIG. 1 illustrates an embodiment in which the heating element 310 may be a resistive element. These resistive elements are disposed on the distal edge of the suppression electrode 200. These resistive elements may be in communication with the heater power supply 300. Although the resistive element is one type of the heating element 310, the present disclosure is not limited to this embodiment. Any device that can supply heat to the distal edge of the suppression electrode 200 may be used.

The heater power source 300 may also be in communication with the controller 350. The controller 350 may include a processing unit and a storage element. The storage element can be any suitable non-transitory memory device, such as semiconductor memory (ie, RAM, ROM, EEPROM, flash memory, RAM, DRAM, etc.), magnetic memory (ie, disk drive), or optical memory ( CD ROM). The storage element may be used to accommodate instructions that, when executed by a processing unit in the controller 350, allow the heating element 310 to control the thermal deformation of the suppression electrode 200.

In some embodiments, a heating element 310 is disposed on the suppression electrode 200. In other embodiments, a plurality of heating elements 310 may be disposed on the suppression electrode 200. In embodiments utilizing multiple heating elements 310, these heating elements 310 may be independently controlled by the controller 350 (eg, by using multiple heater power supplies) or may be jointly controlled. For example, in some embodiments, the heating element 310 located near the center of the suppression electrode 200 in the length dimension may be heated to a greater degree than the heating component 310 disposed near the outer edge in the length dimension.

The controller 350 may utilize various techniques to control the heating assembly 310. In the first embodiment, empirical data is collected that maps the temperature of the suppression electrode 200 as a function of time. For example, the data can be used to form a graph that describes the temperature of the optical edge as a function of time. Alternatively, the data may be used to form a graph that describes the temperature difference between the optical edge and the distal edge as a function of time. In certain embodiments, the data may be used to form a chart that defines the amount of power to be supplied to the heating assembly 310 as a function of time. This information may then be stored in a storage element of the controller 350. In this embodiment, the controller 350 provides instructions to the heater power supply 300 to control the power applied to the heating element 310. The instructions from the controller 350 to the heater power supply 300 may vary as a function of time. Therefore, this embodiment uses open-loop control to control the thermal deformation of the suppression electrode 200.

In another embodiment, the thermal sensor 320 may be disposed on or near the suppression electrode 200. In some embodiments, the thermal sensor 320 is disposed near the optical edge and the distal edge. In other embodiments, the thermal sensor 320 is disposed only near one of the two edges. These thermal sensors 320 may be thermocouples, resistance temperature detectors (RTDs), or other types of thermal sensors.

In another embodiment (shown in FIG. 3), the thermal sensor 320 may not be disposed on the suppression electrode 200. For example, the thermal sensor 320 may be an infrared camera that may be disposed in a position that allows the temperature of the suppression electrode 200 to be measured remotely. In any of these embodiments, the infrared camera may be used interchangeably with an RTD or a thermocouple.

In all of these embodiments, the thermal sensor 320 may be in communication with the controller 350 so that the controller 350 obtains information about the actual temperature of the suppression electrode 200. In some embodiments, the controller 350 uses the difference between the temperature of the optical edge and the temperature of the distal edge to determine the power to be provided to the heating element 310. In other embodiments, the controller 350 uses the actual temperature of the optical edge and the distal edge to determine the power to be provided to the heating element 310. In certain embodiments, the controller 350 uses actual temperature data for one of the optical edge and the distal edge to determine the power to be provided to the heating element 310.

The controller 350 then uses this actual temperature data to determine the power to be applied to the heating element 310. The controller 350 may continuously provide instructions to the heater power supply 300 based on the continuous monitoring of the temperature of the suppression electrode 200. In other embodiments, the controller 350 periodically updates instructions to the heater power source 300, such as once every minute or once at any other suitable time interval. Further, in some embodiments, the suppression electrode 200 may reach a steady state condition after a certain minute, and updates by the controller 350 may no longer be provided after this occurs.

FIG. 4 illustrates another embodiment, in which the heating element 310 is not disposed on the suppression electrode 200. For example, the heating element 310 may be an LED or a heating lamp. In this embodiment, the heating element 310 is disposed close to the suppression electrode 200 so that heat from the heating assembly 310 is targeted and reaches the distal edge of the suppression electrode 200. The controller 350 may be in communication with the heater power source 300 to provide a power level to be provided to an LED or a heating lamp. In any of these embodiments, these LEDs or heating lamps may be used instead of the resistive element. For example, these LEDs or heat lamps can be used in an open-loop configuration. Alternatively, as shown in FIG. 4, these LEDs or heating lamps may be used with a thermal sensor 320 provided on the suppression electrode 200. In addition, these LEDs or heating lamps may be used with thermal sensors not provided on the suppression electrode 200, such as those shown in FIG. Therefore, LEDs or heating lamps can be used interchangeably with the resistive elements shown in FIGS. 1 and 3.

Therefore, FIG. 1, FIG. 3, and FIG. 4 illustrate embodiments in which the thermal sensor 320 (which may be in direct contact with or in proximity to the suppression electrode 200) is used to measure the temperature of one or more edges of the suppression electrode 200 . The information from these thermal sensors 320 is then used by the controller 350 to determine the amount of power applied to the heating element 310. Similar to the thermal sensor 320, the heating element 310 may be disposed in direct contact with or in proximity to the suppression electrode 200. Accordingly, the thermal sensor 320, the controller 350, the heater power source 300, and the heating element 310 form a closed control loop that can be used to control the thermal deformation of the electrode 200.

The examples in these figures illustrate closed-loop control of the suppression electrode based on the measured temperature of one or more edges of the suppression electrode 200. However, closed-loop control can also be implemented in other ways.

FIG. 5 illustrates another embodiment. In this embodiment, the thermal sensor 320 is not used. Instead, the controller 350 uses the information about the uniformity of the ion beam 1 to control the heating element 310. For example, the beam uniformity mapping device 360 (which may include multiple current or charge collectors 361) may be disposed near a platform that normally provides the workpiece 10. In some embodiments, the beam uniformity mapper can stretch across the entire length of the ion beam 1. In other embodiments, the current or charge collector 361 may scan the length across the ion beam 1.

At some point, the workpiece 10 may be removed so that the ion beam 1 hits the beam uniformity mapping instrument 360. The current or charge can be collected as a function of the X-Y position of the ion beam. Therefore, if the thermal deformation of the suppression electrode 200 is not present, the current or charge may be uniform over the length and height of the entire ion beam 1. However, as the suppression electrode 200 is deformed, the current or charge may no longer be uniform. For example, using the suppression electrode 200 shown in FIG. 2B may generate a larger current or charge at the end of the ion beam 1 and a reduced current or charge at the center of the ion beam 1.

The current or charge information collected by the beam uniformity mapping device 360 can be used by the controller 350 to determine the amount of power to be applied to the heating element 310. Therefore, FIG. 5 uses a closed control loop composed of a beam uniformity mapping device 360, a controller 350, a heater power source 300, and a heating element 310. In this embodiment, thermal deformation is monitored by observing the ion beam 1 downstream of the suppression electrode 200. Therefore, this embodiment monitors the ion beam 1 instead of trying to equalize the temperature of the optical edge and the distal edge of the suppression electrode 200 as performed in FIGS. 1, 3 and 4.

To utilize the beam uniformity mapping device 360, the workpiece 10 is removed from the apparatus. Therefore, when the uniformity of the ion beam 1 is measured, the workpiece 10 cannot be processed, resulting in a reduction in efficiency and throughput. Therefore, in this embodiment, the beam uniformity mapping device 360 can only be used sparingly, such as at certain time intervals. For example, the beam uniformity mapper 360 may be utilized after every N workpieces have been processed. In another embodiment, the beam uniformity mapping device 360 may be utilized at fixed time intervals. In this way, thermal deformation can be controlled to minimize a reduction in throughput.

This device has many advantages. First, in one experiment, the amount of thermal deformation (determined by measuring the deflection of the optical edge of the suppression electrode 200) was reduced by more than 85%. This reduction in thermal distortion improves ion beam uniformity. Therefore, suppressing the heating of the electrode 200 becomes another tuning mechanism to control the ion beam uniformity.

The use of the beam uniformity mapper 360 as a component that provides input to the controller 350 may have other advantages. For example, in some embodiments, the ion beam 1 extracted from the extraction aperture 115 may not be uniform in length dimension. For example, the beam current may be larger at the center of the ion beam 1. Therefore, in this embodiment, it may be advantageous to have a certain amount of thermal deformation to reduce the beam current at the center of the ion beam 1. Therefore, the beam uniformity mapping device 360 and the controller 350 combined with the heating assembly 310 can also be used to compensate for the non-uniformity of the ion beam 1 caused by other elements of the device. This technique can also be used to compensate for non-uniformities introduced downstream of the suppression electrode 200. In some embodiments, multiple independently controlled heating assemblies 310 may be utilized to exert more precise control in suppressing thermal deformation of the electrode 200.

This disclosure will not be limited to the scope of the specific embodiments described herein. In fact, those skilled in the art will appreciate from the foregoing description and the accompanying drawings that various other embodiments of the present disclosure and modifications to the present disclosure are possible in addition to those embodiments and modifications described herein. Accordingly, such other embodiments and modifications are intended to fall within the scope of this disclosure. Furthermore, although the present disclosure has been described in the context of a specific embodiment for a specific purpose in a specific environment, those of ordinary skill in the art will recognize that its usefulness is not limited thereto, and that the disclosure may It is advantageously implemented in a variety of environments. Accordingly, the claims set forth above should be interpreted in light of the entire breadth and spirit of the present disclosure as described herein.

1‧‧‧ ion beam

10‧‧‧ Workpiece

100‧‧‧RF ion source

110‧‧‧ ion source chamber

111‧‧‧ chamber wall

112‧‧‧Extraction electrode

115‧‧‧ Extraction orifice

120‧‧‧RF antenna

125‧‧‧ hollow tube

130‧‧‧RF Power

140‧‧‧ bias power supply

150‧‧‧gas storage container

151‧‧‧Air inlet

200‧‧‧ suppression electrode

201a, 201b‧‧‧ components

202a, 202b‧‧‧Optical Edge

203a, 203b ‧‧‧ distal edge

205‧‧‧Inhibition orifice

210‧‧‧ ground electrode

215‧‧‧ grounding opening

220‧‧‧Suppressed power

300‧‧‧ heater power

310‧‧‧Heating element

320‧‧‧ Thermal Sensor

350‧‧‧ Controller

For a better understanding of the present disclosure, reference is made to the accompanying drawings, which are incorporated herein by reference and therein: FIG. 1 illustrates a device for controlling thermal deformation according to one embodiment. FIG. 2A illustrates the suppression electrode before extraction, and FIG. 2B illustrates the suppression electrode after being affected by the extracted ion beam. FIG. 3 illustrates a device for controlling thermal deformation according to another embodiment. FIG. 4 illustrates a device for controlling thermal deformation according to a third embodiment. FIG. 5 illustrates a device for controlling thermal deformation according to a fourth embodiment.

Claims (15)

A device for controlling thermal deformation of an suppression electrode includes: an ion source having a plurality of chamber walls defining an ion source chamber and having an extraction aperture; a suppression electrode disposed outside the ion source chamber and having an suppression aperture An optical edge disposed close to the suppression aperture and a distal edge disposed furthest from the suppression aperture; a heating element for heating the distal edge of the suppression electrode; a heater power source for To provide power to the heating element; and a controller in communication with the heater power source to control a temperature of the distal edge of the suppression electrode. The device for controlling the thermal deformation of the suppression electrode according to item 1 of the patent application scope, wherein the controller controls the temperature of the distal edge of the suppression electrode by using an open loop control. The device for controlling thermal deformation of an suppression electrode according to item 1 of the scope of patent application, wherein the heating element is disposed on the suppression electrode. The device for controlling thermal deformation of the suppression electrode according to item 1 of the scope of the patent application, wherein the heating element is not in direct contact with the suppression electrode. The device for controlling thermal deformation of the suppression electrode according to item 1 of the scope of patent application, further comprising a thermal sensor in communication with the controller to measure a temperature of at least a part of the suppression electrode. The device for controlling thermal deformation of an electrode as described in claim 5, wherein the thermal sensor is used to measure a temperature of the optical edge and the controller is based on the temperature of the optical edge To control the temperature of the distal edge. The device for controlling thermal deformation of an electrode as described in claim 5, wherein the thermal sensor is used to measure the temperature of the optical edge and the distal edge, and the controller is based on the optical The temperature difference between the edge and the distal edge controls the temperature of the distal edge. The device for controlling the thermal deformation of the suppression electrode according to item 5 of the patent application scope, wherein the thermal sensor is disposed on the suppression electrode. The device for controlling thermal deformation of the suppression electrode according to item 5 of the scope of patent application, wherein the thermal sensor is not in direct contact with the suppression electrode. A device for controlling the uniformity of an ion beam, comprising: an ion source having a plurality of chamber walls defining an ion source chamber and an extraction aperture for extracting the ion beam; a suppression electrode provided outside the ion source chamber and A suppression aperture, an optical edge disposed close to the suppression aperture, and a distal edge disposed furthest from the suppression aperture; a heating element for heating the distal edge of the suppression electrode; heating A power supply for supplying power to the heating element; a beam uniformity mapping device provided downstream of the suppression electrode; and a controller in communication with the heater power supply, wherein the controller uses power from The beam uniformity mapping information is used to control the uniformity of the ion beam by heating the distal edge of the suppression electrode. The apparatus for controlling the uniformity of an ion beam according to item 10 of the patent application range, wherein the heating element is disposed on the suppression electrode. The device for controlling the uniformity of an ion beam according to item 10 of the scope of patent application, wherein the heating element is not in direct contact with the suppression electrode. The apparatus for controlling the uniformity of an ion beam according to item 10 of the scope of patent application, wherein the beam uniformity mapping device includes a plurality of arranged to determine the current or charge of the ion beam as a function of the XY position Current or charge collector. A device for controlling the uniformity of an ion beam, comprising: a suppression electrode, provided outside the ion source chamber and having a suppression aperture, an optical edge disposed close to the suppression aperture, and disposed furthest from the suppression aperture A distal edge of the ion source so that ions from the ion source pass through the suppression aperture; a heating element to heat the distal edge of the suppression electrode; and a heater power source to the The heating element provides power. The device for controlling the uniformity of an ion beam according to item 14 of the scope of patent application, further comprising a thermal sensor for measuring the temperature of the suppression electrode.