TW201838771A - Carrier for double-side polishing device, double-side polishing device arranged by use thereof, and double-side polishing method - Google Patents

Abstract

To provide a carrier for a double-side polishing device, which can prevent the worsening of the wafer shape while keeping improvement of the wafer surface imperfection when double-side polishing a semiconductor wafer; a double-side polishing device arranged by use thereof; and a double-side polishing method. A carrier for a double-side polishing device is to be disposed between upper and lower flat plates with polishing cloth attached thereto in the double-side polishing device, and has one or more holding holes formed therein for holding a semiconductor wafer between the upper and lower flat plates in polishing. The surface of the carrier has a region covered with a DLC film and a region not covered with the DLC film. On each of upper and lower faces of the carrier, the region of no more than 30% of the area of one face of the carrier, which extends inward from the bottom of teeth of a gear in an outer periphery of the carrier, is covered with the DLC film.

Description

Carrier for double-side polishing apparatus, double-side polishing apparatus using the same, and double-side polishing method

The present invention relates to a carrier for a double-side polishing apparatus for supporting a semiconductor wafer in polishing a semiconductor wafer in a double-side polishing apparatus.

When the both sides of the semiconductor wafer are simultaneously polished by the double-side polishing apparatus, the semiconductor wafer is supported by the carrier by the double-side polishing apparatus. The carrier is formed to be thinner than the semiconductor wafer and has a support hole for supporting the semiconductor wafer. The semiconductor wafer is supported in the support hole, and the semiconductor wafer is sandwiched between the both surfaces by the polishing cloth attached to the upper and lower fixed plates, and the semiconductor wafer is double-sided polished while the polishing surface is supplied with the polishing agent.

The carrier for the double-side polishing apparatus, if continuously used, the outer peripheral portion of the carrier will be worn to cause a thickness difference. As described above, when the difference in thickness of the carrier is increased, the shape of the semiconductor wafer after double-side polishing is unstable. Here, in order to stabilize the shape of the semiconductor wafer to reduce the wear of the carrier and to extend the life of the carrier, a carrier having a diamond-like carbon film formed on the surface of the carrier is used (for example, Patent Document 1) .

By processing the semiconductor wafer (double-side polishing) with the carrier having the DLC film as described above, it is expected that the hardness of the carrier can be increased, the variation of the thickness and distortion of the carrier can be reduced, the wafer shape can be stabilized, and the carrier life can be extended. . [Previous Technical Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-143477

However, if the semiconductor wafer is polished on both sides by using a carrier having a DLC film on the entire surface of the carrier, although the surface defects (scars, fine particles) of the wafer are improved, there is an abrasive for the semiconductor wafer in double-side polishing. The amount of intervention greatly changes and the shape of the wafer deteriorates.

The present invention has been made in view of the above problems, and provides a carrier for a double-side polishing apparatus capable of preventing deterioration of a wafer surface while improving wafer surface defects during double-side polishing of a semiconductor wafer, and double-side polishing using the carrier. Device and double side grinding method.

In order to solve the above problems, the present invention provides a carrier for a double-side polishing apparatus, which is disposed in a double-side polishing apparatus, and is disposed between an upper fixed plate and a lower fixed plate to which a polishing cloth is attached, and is formed with one or more a support hole for supporting a semiconductor wafer sandwiched between the upper and lower fixed plates during polishing, wherein a surface of the carrier has a region covered with a DLC film, and an area not covered with the DLC film In the upper surface and the lower surface of the carrier, the DLC film is coated on a region from the tooth bottom of the outer circumference of the carrier to the inner side of the carrier, and a region of 30% or less of the area of one side of the carrier.

When the carrier for the double-side polishing apparatus is used, the outer peripheral portion of the carrier having a large thickness variation is partially covered with the DLC film, and a semiconductor wafer having a flat surface state and a good surface state can be obtained. Further, since the thickness variation of the carrier can be reduced, the life of the carrier can be improved.

At this time, in at least one of the upper surface and the lower surface of the carrier, the DLC film is coated on a region of 5% or more of the area of one side of the carrier from the tooth bottom of the outer periphery of the carrier. It is better.

If so, it is possible to more reliably prevent the deterioration of the wafer surface while preventing the deterioration of the wafer shape.

Further, at this time, it is preferable that the DLC film is coated in a region from the tooth bottom of the gear on the outer circumference of the carrier to the outer peripheral side of the carrier of the support hole.

According to the present invention, the DLC film can be formed in such a region, and the deterioration of the wafer surface can be prevented while maintaining the deterioration of the wafer surface.

Further, at this time, it is preferable that the DLC film has a thickness of 0.1 μm to 5 μm, and the DLC film is coated on a corresponding region of the upper surface and the lower surface of the carrier.

If it is such a thing, it can have sufficient thickness as a protection of a carrier surface.

Further, according to the present invention, there is provided a double-side polishing apparatus comprising the carrier for a double-side polishing apparatus of the present invention described above.

In the case of the above-described material for the double-side polishing apparatus of the present invention, it is possible to obtain a semiconductor wafer which is flat and has a good surface condition. Further, since the carrier lifetime can be improved, the exchange frequency of the carrier can be reduced, and the cost can be reduced, and the semiconductor wafer can be polished on both sides efficiently.

According to the present invention, there is provided a double-side polishing method for a semiconductor wafer, wherein a carrier for a double-side polishing apparatus as described above is disposed between an upper fixed plate and a lower fixed plate to which the polishing cloth is attached, and formed on the carrier. The support hole supports the semiconductor wafer, and is sandwiched between the upper fixed plate and the lower fixed plate to perform double-side polishing.

As described above, since the carrier for the double-side polishing apparatus of the present invention described above is used, it is possible to obtain a semiconductor wafer which is flat and has a good surface condition. Further, since the carrier lifetime can be improved, the exchange frequency of the carrier can be reduced, and the cost can be reduced, and the semiconductor wafer can be polished on both sides efficiently.

According to the present invention, it is possible to obtain a semiconductor wafer which is flat and has a good surface state by being partially covered with a DLC film only on the outer peripheral portion of the carrier having a large thickness variation, and further, it is possible to provide a carrier capable of reducing the thickness variation of the carrier. A carrier for a double-side polishing apparatus having an improved life, and a double-side polishing apparatus and a double-side polishing method using the carrier.

Hereinafter, the embodiments of the present invention will be described in detail, but the present invention is not limited thereto.

As described above, when the semiconductor wafer is polished on both sides by using a carrier having a DLC film on the entire surface of the carrier, there is a problem in that the amount of the polishing agent for the semiconductor wafer largely changes and the wafer shape is deteriorated.

Here, the inventor of the present invention has repeatedly elaborated in order to solve such a problem. As a result, it is conceivable that if the surface of the carrier has a region coated with the DLC film and a region not covered with the DLC film, the upper and lower surfaces of the carrier are oriented from the bottom of the gear of the outer periphery of the carrier. On the inner side, a region of 30% or less of the area of one side of the carrier is coated with the DLC film, whereby a semiconductor wafer having a flat surface and a good surface state can be obtained, and further, the life of the carrier can be improved. The present invention is also completed by reviewing the best mode for carrying out such.

The present invention relates to an improvement of a carrier for supporting a semiconductor wafer in a double-side polishing machine that simultaneously polishes both sides of a semiconductor wafer. First, an outline of the double-side polishing apparatus will be described with reference to FIG.

The double-side polishing apparatus 10 including the carrier 1 for a double-side polishing apparatus according to the present invention has a lower fixed plate 11 and an upper fixed plate 12 which are disposed to face each other, and the opposite faces of the fixed plates 11 and 12 are attached to each other. Cloth 11a, 12a. Further, an upper portion of the upper plate 12 is provided with a nozzle 15 for supplying a slurry, and the upper plate 12 is provided with a through hole 16. Further, a sun gear 13 is provided at a center portion between the upper platen 12 and the lower platen 11, and an internal gear 14 is provided at a peripheral portion thereof. The semiconductor wafer W is supported by the support hole 2 of the carrier 1 and sandwiched between the upper fixed plate 12 and the lower fixed plate 11.

In the double-side polishing apparatus, the teeth of the outer peripheral portion of the carrier 1 are meshed by the respective tooth portions of the sun gear 13 and the internal gear 14, so that the support of the carrier 1 and the rotation and revolution of the carrier 1 are performed. At this time, the semiconductor wafer W is supported by the support holes of the carrier 1, and the above polishing cloth 11a and the lower polishing cloth 12a are simultaneously polished on both sides. Further, at the time of polishing, the slurry is supplied from the nozzle 15 through the through hole 16.

Here, the carrier 1 for a double-side polishing apparatus of the present invention provided in the above-described double-side polishing apparatus 10 will be described below with reference to FIG.

The surface of the carrier 1 for double-side polishing apparatus has a region 4a covered with the DLC film 3, and a region 4b not covered with the DLC film 3. Further, in the respective surfaces of the upper surface and the lower surface of the carrier 1, the outer peripheral region of 30% or less of the area of one surface of the carrier 1 is covered with the DLC film from the tooth bottom 5 of the gear of the outer periphery of the carrier 1. 3.

In the case of such a thing, the DLC film is partially covered by the outer peripheral portion of the carrier 1 having a large thickness variation, and the amount of the inflow of the abrasive to the semiconductor wafer W and the contact of the carrier 1 with the polishing cloth are changed. The semiconductor wafer W which is flat and has a good surface state can be obtained in the same manner as the uncoated carrier. Further, since the thickness variation of the carrier 1 can be reduced, the life of the carrier can be improved.

In the conventional carrier for a double-side polishing apparatus, since the DLC film is formed on the entire surface, the amount of the polishing agent for the semiconductor wafer in the double-side polishing greatly changes, and it is difficult to process the semiconductor wafer to be the same as when the film is not coated. Wafer shape. Here, in the present invention, the DLC film is applied only to the outer peripheral portion of the position where the thickness of the carrier changes greatly (easy to wear). Here, the outer peripheral portion of the carrier can be, for example, a position from the tooth bottom of the gear to the outer peripheral side 1/4 of the diameter of the preparation hole (support hole).

At this time, on either of the upper surface and the lower surface of the carrier 1, the DMC film 3 is covered with a region of 5% or more of the area of one side of the carrier 1 from the tooth bottom 5 of the outer circumference of the carrier 1. It is better. According to this, it is possible to more reliably prevent the deterioration of the wafer shape while maintaining the improvement of the wafer surface defect.

At this time, it is preferable that the DMC film 3 is coated on the region from the tooth bottom 5 of the gear of the outer periphery of the carrier 1 to the outer peripheral side of the carrier 1 of the support hole. According to this, it is possible to more reliably prevent the deterioration of the wafer shape while maintaining the improvement of the wafer surface defect.

Further, at this time, it is preferable that the DLC film 3 has a thickness of 0.1 μm to 5 μm, and the DLC film 3 is coated on a corresponding region of the upper surface and the lower surface of the carrier 1. If it is such a thing, it can have sufficient thickness as the protection of the surface of the carrier 1, and can suppress the cost at the time of formation of the DLC film 3.

The carrier 1 of the present invention can be subjected to polishing and polishing, for example, by cutting from a Ti plate, and then performing (1) mask processing step, (2) DLC coating step, and (3) as shown in FIG. The mask stripping step is followed by an insert followed by fabrication.

At this time, the (1) mask processing step has (1-1) lye washing step, (1-2) lamination (resist film) step, (1-3) exposure, development step, (1-4) The baking step, (3) the mask stripping step is preferably (3-1) a resist stripping step by a lye impregnation, and (3-2) a rinsing step.

Further, in the double-side polishing apparatus 10 of the present invention having the carrier 1 for a double-side polishing apparatus of the present invention as described above, a semiconductor wafer W having a flat surface and a good surface state can be obtained. Further, since the carrier lifetime can be improved, the exchange frequency of the carrier can be reduced, and the cost can be reduced, and the semiconductor wafer W can be polished on both sides efficiently.

Further, the carrier 1 for a double-side polishing apparatus according to the present invention described above can be disposed between the upper fixed plate 12 and the lower fixed plate 11 to which the polishing cloths 11a and 12a of the double-side polishing apparatus 10 are attached, and the semiconductors can be supported by the holes 2 The wafer W is supported and sandwiched between the upper fixed plate 12 and the lower fixed plate 11, and the semiconductor wafer W is double-side polished while the slurry is supplied.

In this case, by using the carrier for a double-side polishing apparatus of the present invention described above, a semiconductor wafer having a flat surface and a good surface state can be obtained. Further, since the carrier lifetime can be improved, the exchange frequency of the carrier can be reduced, and the cost can be reduced, and the semiconductor wafer W can be polished on both sides efficiently.

Hereinafter, the present invention will be more specifically described by showing examples and comparative examples of the invention, but the invention is not limited thereto.

(Example 1) Double-side polishing of a semiconductor wafer was performed using the double-side polishing apparatus provided with the carrier for double-side polishing apparatuses of this invention.

First, as shown in Fig. 1, in the upper surface and the lower surface of the carrier 1, from the tooth bottom 5 of the outer circumference of the carrier 1 to the inner side, a region of 5% of the area of one side of the carrier 1 is covered with DLC. Carrier 1 of membrane 3. Here, the carrier 1 is a material in which the DLC film 3 is coated on a corresponding region of the upper surface and the lower surface.

Using the double-side polishing apparatus 10 shown in FIG. 2 including the carrier 1 for a double-side polishing apparatus of the present invention, the double-side polishing of the semiconductor wafer W (tantalum wafer) is performed according to the double-side polishing method of the present invention. The wafer shape and wafer surface defect occurrence rate of the semiconductor wafer W after double-side polishing were evaluated.

Further, as a result of the wafer shape of the semiconductor wafer after double-side polishing and the wafer surface defect occurrence rate (when Comparative Example 2 is 1), the results are shown together with Examples 2 to 3 and Comparative Examples 1 to 4 which will be described later. In Table 1 and Figures 4 to 7. At this time, as the wafer shape, the Roll off value (when Comparative Example 2 was 0), GBIR (when Comparative Example 2 was 100), and ESFQRmax (when Comparative Example 2 was 100) were measured.

Further, the thickness of the carrier before use and the change in thickness after 10,000 minutes of use were measured. The measurement position was 6 points around each support hole, and one carrier was 18 points, and five pieces of the carrier were measured in total, and 90 points were measured in total.

(Example 2) In addition to the carrier for the double-side polishing apparatus, the upper surface and the lower surface of the carrier 1a shown in Fig. 9 are used, and the carrier bottom 1 is inward from the tooth bottom 5 of the outer circumference of the carrier 1a. The semiconductor wafer was subjected to double-side polishing in the same manner as in Example 1 except that 15% of the area of one surface was coated with the carrier 1a of the DLC film 3. Here, the carrier 1a is a material in which the DLC film 3 is coated on a corresponding region of the upper surface and the lower surface.

Further, in the same manner as in Example 1, the wafer shape, the wafer surface defect, and the thickness variation dispersion of the semiconductor wafer after double-side polishing were measured, and the results are shown in Table 1 and FIGS. 4 to 8.

(Embodiment 3) In addition, as a carrier for a double-side polishing apparatus, it is used in the upper surface and the lower surface of the carrier 1b shown in FIG. 10, the tooth bottom 5 of the gear of the outer periphery of the carrier 1b is inward, and the carrier 1b is The semiconductor wafer was subjected to double-side polishing in the same manner as in Example 1 except that the region of 30% of the area on one side was covered with the carrier 1b of the DLC film 3. Here, the carrier 1b is a material in which the DLC film 3 is coated on a corresponding region on the upper surface and the lower surface.

Further, in the same manner as in Example 1, the wafer shape, the wafer surface defect, and the thickness variation dispersion of the semiconductor wafer after double-side polishing were measured, and the results are shown in Table 1 and FIGS. 4 to 8.

(Comparative Example 1) The same as Example 1 except that the carrier for the double-side polishing apparatus was used as the carrier 100a in which the upper surface and the lower surface of the carrier 100a shown in Fig. 11 were coated with the DLC film 103. The method performs double-sided polishing of a semiconductor wafer.

Further, in the same manner as in Example 1, the wafer shape, the wafer surface defect, and the thickness variation dispersion of the semiconductor wafer after double-side polishing were measured, and the results are shown in Table 1 and FIGS. 4 to 8.

(Comparative Example 2) The same method as in Example 1 was used except that the carrier for the double-side polishing apparatus was used as the carrier 100b in which the upper surface and the lower surface of the carrier 100b shown in Fig. 12 were not covered with the DLC film. Perform double-sided polishing of the semiconductor wafer.

Further, in the same manner as in Example 1, the wafer shape, the wafer surface defect, and the thickness variation dispersion of the semiconductor wafer after double-side polishing were measured, and the results are shown in Table 1 and FIGS. 4 to 8.

At this time, the measurement results of the thickness of the carrier 100b of Comparative Example 2 before use and the change of the thickness after 10,000 minutes of use are shown in FIG. As shown in FIG. 13, it can be seen that the positional change of the measurement point 1 of the outer peripheral part of the carrier 100b is the largest.

Further, the relationship between the carrier use time of the carrier 100b of Comparative Example 2 and the flatness and the thickness dispersion of the carrier is shown in FIG. As shown in FIG. 14, in Comparative Example 2, as the use time of the carrier progresses, the thickness dispersion of the carrier becomes large, and the wafer is no longer maintained in the intended shape.

(Comparative Example 3) In addition to the carrier for the double-side polishing apparatus, the upper surface and the lower surface of the carrier 100c as shown in Fig. 15 are inwardly from the tooth bottom 105 of the outer circumference of the carrier 100c, and the carrier 100c is therein. The semiconductor wafer was double-sided polished in the same manner as in Example 1 except that the 40% area of one surface was covered with the carrier 100c of the DLC film 103.

Further, in the same manner as in Example 1, the wafer shape, the wafer surface defect, and the thickness variation dispersion of the semiconductor wafer after double-side polishing were measured, and the results are shown in Table 1 and FIGS. 4 to 8.

(Comparative Example 4) In addition to the carrier for the double-side polishing apparatus, the upper surface and the lower surface of the carrier 100d shown in Fig. 16 are inwardly from the tooth bottom 105 of the outer circumference of the carrier 100d, and the carrier 100d is therein. The double-side polishing of the semiconductor wafer was carried out in the same manner as in Example 1 except that the region of 55% of the area on one side was covered with the carrier 100d of the DLC film 103.

Further, in the same manner as in Example 1, the wafer shape, the wafer surface defect, and the thickness variation dispersion of the semiconductor wafer after double-side polishing were measured, and the results are shown in Table 1 and FIGS. 4 to 8.

【Table 1】

As a result, as shown in Table 1 and FIGS. 4 to 6, in the comparative examples 1, 3, and 4, the outer periphery of the semiconductor wafer after double-side polishing was drooped, and GBIR and ESFQRmax were also high, and a flat semiconductor wafer could not be obtained. On the other hand, in the first to third embodiments, the Roll Off, GBIR, and ESFQRmax can be made to be the same as in the case of the DLC film-less Comparative Example 2, and a flat semiconductor wafer can be obtained.

Further, Fig. 17 shows the wafer shape of the semiconductor wafer after double-side polishing in Example 1 and Comparative Examples 1 and 2. As shown in Fig. 17, in Example 1 in which the outer peripheral portion of the carrier was partially covered with the DLC film, the semiconductor crystal after double-side polishing was compared with Comparative Example 1 in which the entire surface was coated with the DLC film. The shape of the circle changes less.

Further, in Examples 1 to 3, as shown in Table 1 and FIG. 7, the occurrence rate of wafer surface defects such as scratches and fine particles can be made to be the same as in Comparative Examples 1, 3, and 4, and the surface state can be obtained well. Semiconductor wafers. On the other hand, in Comparative Example 2, since the film of the DLC film was not formed at all, the wafer surface defect occurrence rate was higher than that of Examples 1 to 3.

Further, in Examples 1 to 3, as shown in Fig. 8, the thickness variation of the carrier can be dispersed to the same extent as in Comparative Examples 1, 3, and 4, and a semiconductor wafer having a good surface state can be obtained. On the other hand, in Comparative Example 2, since the film of the DLC film was not formed at all, the thickness variation was larger than that of Examples 1 to 3. As described above, in the first to third embodiments, the thickness variation of the carrier can be reduced, so that the life of the carrier can be improved.

Further, the present invention is not limited by the foregoing embodiments. The above-described embodiments are exemplified, and have substantially the same configuration as the technical idea described in the patent application scope of the present invention, and the same effects are achieved in the technical scope of the present invention.

10‧‧‧Double-side grinding device

1‧‧‧ Carrier

1a‧‧‧ Carrier

1b‧‧‧ Carrier

100a‧‧‧ Carrier

100b‧‧‧Vector

100c‧‧‧ carrier

100d‧‧‧ carrier

103‧‧‧DLC film

105‧‧‧ tooth bottom

11‧‧‧Definition

11a‧‧‧ polishing cloth

12‧‧‧Upright

12a‧‧‧ polishing cloth

13‧‧‧Sun Gear

14‧‧‧Internal gear

15‧‧‧ nozzle

16‧‧‧through holes

2‧‧‧Support hole

3‧‧‧DLC film

4a‧‧‧Area

4b‧‧‧Area

5‧‧‧ tooth bottom

W‧‧‧Semiconductor Wafer

Fig. 1 is a schematic view showing an example of a carrier for a double-side polishing apparatus of the present invention. Fig. 2 is a schematic view showing an example of a double-side polishing apparatus including a carrier for a double-side polishing apparatus of the present invention. Fig. 3 is a view showing a procedure for producing an example of a carrier for a double-side polishing apparatus of the present invention. 4 is a graph showing the amount of Roll off values of the semiconductor wafer after double-side polishing in the examples and the comparative examples. Fig. 5 is a graph showing the GRIB value of the semiconductor wafer after double-side polishing in the examples and the comparative examples. Fig. 6 is a graph showing the ESFQRmax value of the semiconductor wafer after double-side polishing in the examples and the comparative examples. Fig. 7 is a graph showing the incidence of wafer surface defects in the semiconductor wafer after double-side polishing in the examples and the comparative examples. Fig. 8 is a graph showing the dispersion of the thickness variation of the semiconductor wafer after double-side polishing in the examples and the comparative examples. Fig. 9 is a schematic view showing a carrier for a double-side polishing apparatus used in Example 2. Fig. 10 is a schematic view showing a carrier for a double-side polishing apparatus used in Example 3. Fig. 11 is a schematic view showing a carrier for a double-side polishing apparatus used in Comparative Example 1. Fig. 12 is a schematic view showing a carrier for a double-side polishing apparatus used in Comparative Example 2. Fig. 13 is a graph showing the measurement results of the thickness before use and the thickness change after 10,000 minutes of the carrier for the double-side polishing apparatus used in Comparative Example 2. Fig. 14 is a graph showing the relationship between the use time of the carrier in Comparative Example 2 and the flatness and dispersion of the carrier thickness. Fig. 15 is a schematic view showing a carrier for a double-side polishing apparatus used in Comparative Example 3. Fig. 16 is a schematic view showing a carrier for a double-side polishing apparatus used in Comparative Example 4. Fig. 17 is a chart showing the wafer shape of the semiconductor wafer after double-side polishing in Example 1 and Comparative Examples 1 and 2.

Claims (9)

A carrier for a double-side polishing apparatus is disposed in a double-side polishing apparatus, and is disposed between an upper fixed plate and a lower fixed plate to which a polishing cloth is attached, and is formed with one or more support holes for supporting during grinding a semiconductor wafer sandwiched between the upper and lower fixed plates, wherein a surface of the carrier has a region covered with a DLC film, and a region not covered with the DLC film, on an upper surface and a lower surface of the carrier In the surface, the DLC film is coated on the inner side of the gear of the outer periphery of the carrier, and the area of 30% or less of the area of one side of the carrier. The carrier for a double-side polishing apparatus according to claim 1, wherein in at least one of an upper surface and a lower surface of the carrier, an area of one side of the carrier is inward from a tooth bottom of a gear of an outer circumference of the carrier More than 5% of the area is covered with the DLC film. The carrier for a double-side polishing apparatus according to claim 1, wherein the DLC film is coated from a tooth bottom of the gear on the outer circumference of the carrier to a region on the outer peripheral side of the carrier of the support hole. The carrier for a double-side polishing apparatus according to claim 2, wherein the DLC film is coated from a tooth bottom of the gear on the outer circumference of the carrier to a region on the outer peripheral side of the carrier of the support hole. The carrier for a double-side polishing apparatus according to any one of claims 1 to 4, wherein the DLC film has a thickness of 0.1 μm to 5 μm, and the DLC is coated on a corresponding one of the upper surface and the lower surface of the carrier. membrane. A double-side polishing apparatus comprising the carrier for a double-side polishing apparatus according to any one of claims 1 to 4. A double-side polishing apparatus comprising the carrier for a double-side polishing apparatus according to claim 5. A double-side polishing method for a semiconductor wafer, wherein a carrier for a double-side polishing apparatus according to any one of claims 1 to 4 is disposed between the upper and lower fixed plates to which the polishing cloth is attached, and is formed The support hole of the carrier supports the semiconductor wafer, and is sandwiched between the upper fixed plate and the lower fixed plate to perform double-side polishing. A double-sided polishing method for a semiconductor wafer, wherein a carrier for a double-side polishing apparatus according to claim 5 is disposed between an upper fixed plate and a lower fixed plate to which the polishing cloth is attached, and the support formed on the carrier The hole supports the semiconductor wafer, and is sandwiched between the upper and lower fixed plates to perform double-side polishing.