TW201833363A - Plasma cone for inductively coupled plasma mass spectrometer, inductively coupled plasma mass spectrometer, and method for manufacturing plasma cone for inductively coupled plasma mass spectrometer - Google Patents

Plasma cone for inductively coupled plasma mass spectrometer, inductively coupled plasma mass spectrometer, and method for manufacturing plasma cone for inductively coupled plasma mass spectrometer Download PDF

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TW201833363A
TW201833363A TW107101490A TW107101490A TW201833363A TW 201833363 A TW201833363 A TW 201833363A TW 107101490 A TW107101490 A TW 107101490A TW 107101490 A TW107101490 A TW 107101490A TW 201833363 A TW201833363 A TW 201833363A
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plasma
cone
mass spectrometer
inductively coupled
platinum
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荒木健司
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日商信越半導體股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/06Electron- or ion-optical arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/10Ion sources; Ion guns

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Abstract

A sampling cone (14) and a skimmer cone (16) as a plasma cone constituting part of an interface part of an inductively coupled plasma mass spectrometer have: base materials (141), (161) formed using copper, nickel, etc.; and coating films (142), (162) formed on the surface of the base materials (141), (161). The coating films (142), (162) are formed from platinum, a platinum group metal other than platinum, gold, or an alloy of these. Also, the coating films (142), (162) are formed using an ion plating method or a plasma CVD method. There are thereby provided a plasma cone, an inductively coupled plasma mass spectrometer comprising said plasma cone, and a method for manufacturing the plasma cone thereof, with which it is possible to reduce the impurity background and also improve durability without sacrificing sensitivity (ionic strength).

Description

用於感應耦合電漿質譜儀之電漿錐、感應耦合電漿質譜 儀、用於感應耦合電漿質譜儀之電漿錐之製造方法  Plasma cone for inductively coupled plasma mass spectrometer, inductively coupled plasma mass spectrometer, and plasma cone for inductively coupled plasma mass spectrometer  

本發明係關於一種用於感應耦合電漿質譜儀之介面部之電漿錐、及具備其之感應耦合電漿質譜儀、及電漿錐之製造方法。 The present invention relates to a plasma cone for use in an inductively coupled plasma mass spectrometer, an inductively coupled plasma mass spectrometer having the same, and a method of manufacturing a plasma cone.

感應耦合電漿質譜儀(Inductively Coupled Plasma Mass Spectrometer)(以下有時稱為ICPMS)係如下裝置,即,對置於電漿炬部之感應加熱線圈供給高頻電力而產生感應電漿,將經氣溶膠化之試樣溶液噴霧至電漿之中心部,使試樣中所含之元素離子化。離子經由電漿介面部而被導入至真空系統,於藉由質譜儀分離為目標質量後,利用檢測器進行計數,藉此可進行離子(元素)之鑑定或定量。ICPMS之特徵在於,能夠高感度地同時進行多元素之分析,且校準曲線之直線範圍較廣。 Inductively Coupled Plasma Mass Spectrometer (hereinafter sometimes referred to as ICPMS) is a device that supplies high frequency power to an induction heating coil placed in a plasma torch portion to generate an inductive plasma. The aerosolized sample solution is sprayed to the center of the plasma to ionize the elements contained in the sample. The ions are introduced into the vacuum system via the plasma interface, and are separated into target masses by a mass spectrometer, and then counted by a detector, whereby identification or quantification of ions (elements) can be performed. The ICPMS is characterized in that multi-element analysis can be performed simultaneously with high sensitivity, and the calibration curve has a wide range of straight lines.

ICPMS由如下構件構成:試樣導入部,其將試樣溶液以噴霧的形式導入;電漿炬部,其將噴霧之試樣中所含之元素離子化;介面部,其將離子引入至具有質譜儀之真空系統;離子透鏡部,其用以將離子高效率地導向質譜儀;質量分離部,其對離子進行質量分離;及離子檢測部,其進行離子之檢測。 The ICPMS is composed of a sample introduction portion that introduces a sample solution as a spray, a plasma torch portion that ionizes an element contained in the sprayed sample, and a face portion that introduces ions to have A vacuum system of a mass spectrometer; an ion lens portion for efficiently guiding ions to a mass spectrometer; a mass separation portion for mass separation of ions; and an ion detecting portion for detecting ions.

其中,介面部係由中心部開有小孔之2種電漿錐(取樣錐、截取錐)所構成,作為導熱性良好、堅固且耐蝕性較高者,亦有材質以鎳或銅為主,僅前端部使用鉑者(參照圖4)。 Among them, the interface is composed of two kinds of plasma cones (sampling cones and intercepting cones) with small holes in the center. As a good thermal conductivity, strong and high corrosion resistance, there are also materials mainly made of nickel or copper. Only platinum is used at the front end (see Figure 4).

電漿錐由於與作為離子化源之電漿直接接觸,故而有該等所使用 之材質自身亦離子化之情形。若電漿錐所使用之材質離子化,則其等成為背景雜訊,而變得無法與試樣中實際所含有之離子進行區分。作為其解決對策,於專利文獻1中揭示有將電漿錐整體以鉑形成。 Since the plasma cone is in direct contact with the plasma as the ionization source, the material used therein is also ionized. If the material used in the plasma cone is ionized, it becomes background noise and cannot be distinguished from the ions actually contained in the sample. As a countermeasure against this, Patent Document 1 discloses that the entire plasma cone is formed of platinum.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開平8-115702號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 8-115702

鉑係導熱性良好,堅固且耐蝕性較高之金屬,認為若確實地以鉑形成電漿錐,則可抑制鎳或銅等之背景上升,而且壽命較鎳或銅之電漿錐延長。但是,發現存在感度(離子強度)與鎳或銅之電漿錐相比較差之問題。ICPMS係以高感度分析為特徵之裝置,感度較差會犧牲裝置性能,故而欠佳。 Platinum is a metal that is excellent in thermal conductivity and is strong and has high corrosion resistance. It is considered that if a plasma cone is formed by platinum, the background rise of nickel or copper can be suppressed, and the life of the plasma is longer than that of nickel or copper. However, it has been found that there is a problem that the sensitivity (ion strength) is inferior to the nickel or copper plasma cone. ICPMS is a device characterized by high-sensitivity analysis. Poor sensitivity will sacrifice device performance and is therefore poor.

本發明係鑒於上述問題而完成者,其課題在於提供一種可不犧牲感度(離子強度)而降低雜質背景,進而可提高耐久性之電漿錐及具備其之感應耦合電漿質譜儀及該電漿錐之製造方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a plasma cone which can reduce the background of impurities without sacrificing sensitivity (ion strength), and an inductively coupled plasma mass spectrometer having the same, and the plasma The manufacturing method of the cone.

為了解決上述課題,本發明之用於感應耦合電漿質譜儀之電漿錐之特徵在於:表面具有鉑或鉑以外之鉑族金屬或金或其等之合金之塗膜。又,本發明之感應耦合電漿質譜儀具備表面具有鉑或鉑以外之鉑族金屬或金或其等之合金之塗膜之電漿錐。 In order to solve the above problems, the plasma cone for an inductively coupled plasma mass spectrometer of the present invention is characterized in that a coating film of a platinum group metal other than platinum or platinum or an alloy of gold or the like is provided on the surface. Further, the inductively coupled plasma mass spectrometer of the present invention comprises a plasma cone having a coating film of a platinum group metal other than platinum or platinum or an alloy of gold or the like.

如此,藉由於電漿錐之表面形成鉑或鉑以外之鉑族金屬或金或其等之合金之塗膜,可不犧牲感度(離子強度)而降低雜質背景,又,可提高電漿錐之耐久性。再者,所謂鉑以外之鉑族金屬係指釕、銠、鈀、鋨或銥。又, 塗膜較佳為由鉑形成。 Thus, by forming a coating film of a platinum group metal such as platinum or platinum or an alloy of gold or the like on the surface of the plasma cone, the impurity background can be reduced without sacrificing sensitivity (ionic strength), and the durability of the plasma cone can be improved. Sex. Further, the platinum group metal other than platinum means ruthenium, rhodium, palladium, iridium or osmium. Further, the coating film is preferably formed of platinum.

又,塗膜較佳為藉由離子鍍覆法或電漿CVD法而形成。藉此,與使用離子鍍覆法、電漿CVD法以外之方法之情形相比,可形成高品質之塗膜。 Further, the coating film is preferably formed by an ion plating method or a plasma CVD method. Thereby, a high-quality coating film can be formed as compared with the case of using a method other than the ion plating method or the plasma CVD method.

100‧‧‧感應耦合電漿質譜儀 100‧‧‧Inductively coupled plasma mass spectrometer

7‧‧‧介面部 7‧‧‧ facial

14‧‧‧取樣錐(電漿錐) 14‧‧‧Sampling cone (plasma cone)

16‧‧‧截取錐(電漿錐) 16‧‧‧ interception cone (plasma cone)

圖1係感應耦合電漿質譜儀之構成圖。 Figure 1 is a block diagram of an inductively coupled plasma mass spectrometer.

圖2係感應耦合電漿質譜儀之電漿炬部及介面部(取樣錐、截取錐)之剖面圖。 2 is a cross-sectional view of a plasma torch portion and a face portion (sampling cone, intercepting cone) of an inductively coupled plasma mass spectrometer.

圖3A係實施例之取樣錐之側視圖。 Figure 3A is a side elevational view of the sampling cone of the embodiment.

圖3B係實施例之截取錐之側視圖。 Figure 3B is a side elevational view of the intercepting cone of the embodiment.

圖4A係比較例1之取樣錐之側視圖。 4A is a side view of the sampling cone of Comparative Example 1.

圖4B係比較例1之截取錐之側視圖。 4B is a side view of the intercepting cone of Comparative Example 1.

圖5A係比較例2之取樣錐之側視圖。 Fig. 5A is a side view of the sampling cone of Comparative Example 2.

圖5B係比較例2之截取錐之側視圖。 Fig. 5B is a side view of the intercepting cone of Comparative Example 2.

以下,對本發明之實施形態進行說明。圖1表示本實施形態之ICPMS100之構成。於ICPMS100中,試樣溶液1以噴霧之形式導入至導入部2並於該處氣化,藉由氬氣等載氣3導入至電漿炬部4之電漿中。此處,於電漿炬部4中導入例如氬氣5,又,藉由自高頻電源6施加電力而產生氬電漿。此時,經氣化之試樣於該電漿中被加熱至例如8000~10000K而離子化。 Hereinafter, embodiments of the present invention will be described. Fig. 1 shows the configuration of an ICPMS 100 of this embodiment. In the ICPMS 100, the sample solution 1 is introduced into the introduction portion 2 as a spray, vaporized there, and introduced into the plasma of the plasma torch portion 4 by a carrier gas 3 such as argon gas. Here, for example, argon gas 5 is introduced into the plasma torch portion 4, and argon plasma is generated by applying electric power from the high-frequency power source 6. At this time, the vaporized sample is heated to, for example, 8000 to 10000 K in the plasma to be ionized.

其後,經離子化之試樣通過圖2所示之由取樣錐14及截取錐16這2種電漿錐所構成之介面部7,導入至藉由差動排氣9保持為高真空之真空腔室8內。導入至真空腔室8內之離子藉由離子透鏡部10進行能量聚焦後,藉由質譜儀11進行質量分離及檢測。藉由質譜儀11檢測之資料(質譜)被傳至運算裝置12, 藉由運算裝置12進行分析處理。 Thereafter, the ionized sample is introduced into the dielectric surface portion 7 composed of the two types of plasma cones, which are shown by the sampling cone 14 and the intercepting cone 16, as shown in FIG. 2, and is introduced into the high vacuum by the differential exhaust gas 9. Inside the vacuum chamber 8. The ions introduced into the vacuum chamber 8 are subjected to energy focusing by the ion lens unit 10, and mass separation and detection are performed by the mass spectrometer 11. The data (mass spectrum) detected by the mass spectrometer 11 is transmitted to the arithmetic unit 12, and the arithmetic unit 12 performs analysis processing.

此處,圖2所示之取樣錐14及截取錐16分別為錐形(圓錐狀),於其前端形成有小徑之孔143、163(orifice)。該等孔143、163配置於與來自電漿炬部4之電漿對向之位置。再者,自電漿炬部4觀察時,按照取樣錐14、截取錐16之順序配置。在電漿炬部4經離子化之試樣藉由通過取樣錐14及截取錐16之中心孔143、163而成為束狀,被導入至真空腔室8內。 Here, the sampling cone 14 and the cutting cone 16 shown in FIG. 2 are each tapered (conical), and holes 143 and 163 having small diameters are formed at the tip end thereof. The holes 143 and 163 are disposed at positions opposed to the plasma from the torch unit 4. Further, when viewed from the torch unit 4, the sampling cone 14 and the cutting cone 16 are arranged in this order. The sample ionized in the torch portion 4 is bundled by the sampling holes 14 and the center holes 143 and 163 of the cutting cone 16, and is introduced into the vacuum chamber 8.

又,取樣錐14及截取錐16分別具有形成為錐形之母材141、161、及形成於該母材141、161之表面(朝向電漿炬部4側之外表面)上之塗膜142、162。母材141、161至少除前端以外,由鉑族金屬、金或其等之合金以外之金屬形成,具體而言,例如由銅、鎳、鋁等形成。再者,母材141、161之前端可由鉑族金屬、金或其等之合金以外之金屬(銅、鎳、鋁等)形成,亦可由鉑族金屬、金或其等之合金形成。 Further, the sampling cone 14 and the cutting cone 16 have a base material 141, 161 formed in a tapered shape, and a coating film 142 formed on the surface of the base material 141, 161 (the outer surface facing the side of the plasma torch portion 4). 162. The base materials 141 and 161 are formed of a metal other than a platinum group metal, gold, or the like, at least in addition to the tip end, and are specifically formed of, for example, copper, nickel, aluminum, or the like. Further, the front ends of the base materials 141 and 161 may be formed of a metal other than a platinum group metal, gold, or the like (copper, nickel, aluminum, or the like), or may be formed of a platinum group metal, gold, or the like.

另一方面,塗膜142、162係由耐蝕性優於銅、鎳等之鉑族金屬或金或其等之合金形成,尤佳為由耐蝕性優異之鉑形成。塗膜142、162係以覆蓋母材141、161之外表面整體之方式形成。再者,塗膜142、162可不形成於母材141、161之內側之面(背面),亦可形成於母材141、161之內側之面(背面)。 On the other hand, the coating films 142 and 162 are formed of a platinum group metal having a corrosion resistance superior to that of copper or nickel, or an alloy of gold or the like, and are preferably formed of platinum excellent in corrosion resistance. The coating films 142 and 162 are formed so as to cover the entire outer surfaces of the base materials 141 and 161. Further, the coating films 142 and 162 may be formed on the inner surface (back surface) of the base materials 141 and 161, or may be formed on the inner surface (back surface) of the base materials 141 and 161.

塗膜142、162較佳為藉由離子鍍覆法或電漿CVD(Chemical Vapor Deposition)法而形成。藉此,如下述實施例所示,可獲得高品質之塗膜142、162。 The coating films 142 and 162 are preferably formed by an ion plating method or a plasma CVD (Chemical Vapor Deposition) method. Thereby, as shown in the following examples, high-quality coating films 142, 162 can be obtained.

如此,藉由於電漿錐14、16之表面具有鉑族金屬或金或其等之合金之塗膜142、162,如下述實施例所示,可不犧牲感度(離子強度)而降低雜質背景,進而可提高電漿錐14、16之耐久性。 Thus, since the surface of the plasma cones 14, 16 has a coating film 142, 162 of a platinum group metal or an alloy of gold or the like, as shown in the following examples, the impurity background can be lowered without sacrificing sensitivity (ionic strength). The durability of the plasma cones 14, 16 can be improved.

[實施例] [Examples]

以下,列舉實施例具體地說明本發明,但該等並不限定本發明。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited thereto.

(實施例1) (Example 1)

用於評價之裝置係使用Thermo Fisher Scientific公司製造之高解析感應耦合電漿質譜儀ELEMENT2,進行分別使用圖4A、圖4B之電漿錐(比較例1)、圖5A、圖5B之電漿錐(比較例2)及圖3A、圖3B之電漿錐(實施例)時之離子強度、離子強度比、及檢測下限值之比較。此處,圖4A、圖4B之電漿錐(取樣錐24、截取錐25)係於銅(Cu)母材20之表面上具有鎳(Ni)鍍層21,進而於銅母材20之前端具有鉑(Pt)尖22之構造。又,圖5A、圖5B之電漿錐(取樣錐26、截取錐27)係全部由鉑28所形成之構造。又,圖3A、圖3B之電漿錐(取樣錐18、截取錐19)係藉由離子鍍覆法於圖4A、圖4B之電漿錐24、25之表面上沈積20μm之鉑塗膜23而成之構造。再者,於圖3A、圖3B、圖4A、圖4B中,將前端之鉑尖22以斜線影線表示。 The device used for the evaluation was a plasma cone of the plasma cone (Comparative Example 1) and FIG. 5A and FIG. 5B of FIG. 4A and FIG. 4B, respectively, using a high-resolution inductively coupled plasma mass spectrometer ELEMENT2 manufactured by Thermo Fisher Scientific. (Comparative Example 2) and the comparison of the ionic strength, the ionic strength ratio, and the detection lower limit value in the plasma cone (Example) of Figs. 3A and 3B. Here, the plasma cone (sampling cone 24, intercepting cone 25) of FIGS. 4A and 4B has a nickel (Ni) plating layer 21 on the surface of the copper (Cu) base material 20, and further has a front end of the copper base material 20 Platinum (Pt) tip 22 construction. Further, the plasma cones (the sampling cone 26 and the cutting cone 27) of Figs. 5A and 5B are all formed of platinum 28. Further, the plasma cone (sampling cone 18, intercepting cone 19) of FIGS. 3A and 3B is a platinum coating film of 20 μm deposited on the surface of the plasma cones 24 and 25 of FIGS. 4A and 4B by ion plating. Made of structure. Further, in FIGS. 3A, 3B, 4A, and 4B, the tip end of the platinum tip 22 is indicated by hatching.

使用將多摩化學製超高純度硝酸(TAMAPURE-AA-100)以成為5wt%(重量%)之方式利用超純水進行稀釋而獲得之空白樣品溶液、及以於相同之溶液中In、Na、Mg、Al、Ca、Cr、Fe、Ni、Cu、Zn之各者之濃度成為0.1ppb之方式製備之標準溶液,比較圖3~圖5之電漿錐18、19、24、25、26、27中之Na、Mg、Al、Ca、Cr、Fe、Ni、Cu、Zn之背景離子強度及In之離子強度。將其結果示於表1。於表1中,Na、Mg、Al、Ca、Cr、Fe、Ni、Cu、Zn之背景離子強度係示出空白樣品溶液之結果,In之離子強度係示出In為0.1ppb之標準溶液之結果。又,表1之結果係示出使用空白樣品溶液及標準溶液分別進行多次離子強度測定而獲得之多次測定結果之平均值。 A blank sample solution obtained by diluting ultrapure water in a manner of 5 wt% (% by weight) of Tama Chemical-made ultra-high purity nitric acid (TAMAPURE-AA-100), and In, Na, in the same solution The standard solution prepared by the method of the concentration of each of Mg, Al, Ca, Cr, Fe, Ni, Cu, and Zn is 0.1 ppb, and the plasma cones 18, 19, 24, 25, 26 of FIGS. 3 to 5 are compared. The background ionic strength of Na, Mg, Al, Ca, Cr, Fe, Ni, Cu, Zn and the ionic strength of In in 27. The results are shown in Table 1. In Table 1, the background ionic strength of Na, Mg, Al, Ca, Cr, Fe, Ni, Cu, Zn shows the result of the blank sample solution, and the ionic strength of In shows the standard solution of In of 0.1 ppb. result. The results of Table 1 show the average of the results of a plurality of measurements obtained by performing multiple ion intensity measurements using a blank sample solution and a standard solution, respectively.

又,求出表1中之In以外之各元素(Na、Mg、Al、Ca、Cr、Fe、Ni、Cu、Zn)之離子強度相對於In之離子強度之比。將其結果示於表2。 Further, the ratio of the ionic strength of each element (Na, Mg, Al, Ca, Cr, Fe, Ni, Cu, Zn) other than In in Table 1 to the ionic strength of In was determined. The results are shown in Table 2.

進而,使用上述空白樣品溶液及標準溶液,針對各元素(Na、Mg、Al、Ca、Cr、Fe、Ni、Cu、Zn)之每一者,製作表示離子強度與濃度之關係之校準曲線。又,多次測定使用空白樣品溶液時之各元素之離子強度,算出所獲得之多次之測定結果中之與3σ(標準偏差σ之3倍值)對應之濃度作為各元素之檢測下限值。該檢測下限值係基於校準曲線而算出。其係由於使用空白樣品溶液時之各元素之離子強度為背景雜訊,故而將含有該背景雜訊之99.7%之3σ 之範圍內之離子強度排除在可檢測濃度外,將該範圍之上限值(即3σ)以上之離子強度作為可檢測濃度。將檢測下限值之算出結果示於表3。 Further, using the blank sample solution and the standard solution, a calibration curve indicating the relationship between the ion intensity and the concentration was prepared for each of the elements (Na, Mg, Al, Ca, Cr, Fe, Ni, Cu, and Zn). Further, the ionic strength of each element when the blank sample solution is used is measured a plurality of times, and the concentration corresponding to 3σ (three times the standard deviation σ) among the obtained measurement results is calculated as the detection lower limit value of each element. . The detection lower limit is calculated based on the calibration curve. Since the ionic strength of each element when the blank sample solution is used is background noise, the ionic strength in the range of 3σ including 99.7% of the background noise is excluded from the detectable concentration, and the upper limit of the range is The ionic strength above the value (ie, 3σ) is taken as the detectable concentration. The calculation results of the detection lower limit value are shown in Table 3.

如表1所示,可知於圖3A、圖3B之實施例之電漿錐18、19中,與圖4A、圖4B之比較例1之電漿錐24、25相比,In之離子強度大致相同,相對於此,Na、Mg、Al、Ca、Cr、Fe、Ni、Cu、Zn之離子強度(背景離子強度)減少。認為其原因在於,於實施例之電漿錐18、19中,由於將母材20之表面利用鉑23覆蓋,故而可防止起因於母材20之元素蒸發。就相同之原因而言,可知各元素之離子強度相對於In強度之比亦變小(參照表2),檢測下限值亦提高(參照表3)。 As shown in Table 1, it is understood that in the plasma cones 18 and 19 of the embodiment of Figs. 3A and 3B, the ionic strength of In is substantially higher than that of the plasma cones 24 and 25 of Comparative Example 1 of Figs. 4A and 4B. Similarly, in contrast, the ionic strength (background ionic strength) of Na, Mg, Al, Ca, Cr, Fe, Ni, Cu, and Zn is decreased. The reason for this is considered to be that, in the plasma cones 18 and 19 of the embodiment, since the surface of the base material 20 is covered with platinum 23, evaporation of elements due to the base material 20 can be prevented. For the same reason, it is understood that the ratio of the ionic strength of each element to the In intensity is also small (see Table 2), and the detection lower limit is also improved (refer to Table 3).

另一方面,可知於圖5A、圖5B之比較例2之電漿錐26、27中,與圖4A、圖4B之比較例1之電漿錐24、25相比,背景離子強度減少,但In之離子強度減少至約1/20(參照表1),各元素之離子強度相對於In強度之比反而變大(參照表2),又,檢測下限值亦劣化(參照表3)。 On the other hand, in the plasma cones 26 and 27 of Comparative Example 2 of FIGS. 5A and 5B, the background ion intensity was reduced as compared with the plasma cones 24 and 25 of Comparative Example 1 of FIGS. 4A and 4B. The ionic strength of In was reduced to about 1/20 (refer to Table 1), and the ratio of the ionic strength of each element to the In intensity was inversely increased (refer to Table 2), and the detection lower limit was also deteriorated (refer to Table 3).

如此,於實施例中,可保持離子強度(感度)並且防止因電漿錐之材質所引起之雜質背景之增加,可達成檢測下限值之提高。 Thus, in the embodiment, the ionic strength (sensitivity) can be maintained and the increase in the background of the impurities caused by the material of the plasma cone can be prevented, and the improvement of the detection lower limit can be achieved.

(實施例2) (Example 2)

於藉由各種塗佈法(具體而言為離子鍍覆法、真空蒸鍍法、濺鍍蒸鍍法、電漿CVD法、電解鍍覆法)形成電漿錐之表面之鉑膜時,調查各鉑膜對母材之 密接性、膜密度、成膜時之雜質污染之程度。再者,電漿錐之母材之構造係圖4A、圖4B之構造(於銅母材20之表面具有鎳鍍層21,且於前端具有鉑尖22之構造)。將調查結果示於表4。 When a platinum film is formed on the surface of a plasma cone by various coating methods (specifically, ion plating method, vacuum vapor deposition method, sputtering vapor deposition method, plasma CVD method, or electrolytic plating method), investigation is conducted. The degree of adhesion of each platinum film to the base material, the film density, and the contamination of the impurities during film formation. Further, the structure of the base material of the plasma cone is the structure of FIG. 4A and FIG. 4B (the structure having the nickel plating layer 21 on the surface of the copper base material 20 and having the platinum tip 22 at the front end). The results of the survey are shown in Table 4.

如表4所示,可知若藉由離子鍍覆法形成鉑膜,則密接性、膜密度、成膜時之雜質污染之程度均成為良好(○),作為鉑膜之塗佈法,尤佳為離子鍍覆法。 As shown in Table 4, it is understood that when the platinum film is formed by the ion plating method, the adhesion, the film density, and the degree of impurity contamination during film formation are all good (○), and it is particularly preferable as a coating method of the platinum film. It is an ion plating method.

又,可知於電漿CVD法中,密接性較使用離子鍍覆法時略差(△),但膜密度及成膜時之雜質污染之程度成為良好(○),電漿CVD法作為鉑膜之塗佈法亦較佳。 Further, in the plasma CVD method, the adhesion is slightly inferior (Δ) as compared with the ion plating method, but the film density and the degree of impurity contamination during film formation are good (○), and the plasma CVD method is used as the platinum film. The coating method is also preferred.

(實施例3) (Example 3)

調查圖3A、圖3B之電漿錐18、19(於圖4A、圖4B之電漿錐24、25沈積有20μm之鉑23者)、及圖4A、圖4B之電漿錐24、25(於銅母材20之表面具有鎳鍍層21,且於前端具有鉑尖22之電漿錐)之各者之耐久性(壽命)。將其結果示於表5。 The plasma cones 18 and 19 of FIG. 3A and FIG. 3B are investigated (the plasma cones 24 and 25 of FIGS. 4A and 4B are deposited with 20 μm of platinum 23), and the plasma cones 24 and 25 of FIG. 4A and FIG. The durability (life) of each of the nickel base layer 21 on the surface of the copper base material 20 and the plasma cone of the platinum tip 22 at the tip end. The results are shown in Table 5.

如表5所示,習知之電漿錐(圖4A、圖4B之電漿錐24、25)之耐久性為3個月左右,相對於此,具有鉑塗層之電漿錐(圖3A、圖3B之電漿錐18、19)之耐久性為6個月~8個月,成為習知之電漿錐之耐久性之大致2倍。如此, 可知藉由於表面塗佈耐蝕性優於銅或鎳之鉑,可提高電漿錐之耐久性。 As shown in Table 5, the conventional plasma cone (the plasma cones 24 and 25 of Figs. 4A and 4B) has a durability of about 3 months. In contrast, a plasma cone having a platinum coating (Fig. 3A, The durability of the plasma cones 18, 19) of Fig. 3B is 6 months to 8 months, which is approximately twice the durability of the conventional plasma cone. Thus, it can be seen that the durability of the plasma cone can be improved by the fact that the surface coating corrosion resistance is superior to that of copper or nickel.

再者,本發明並不限定於上述實施形態。上述實施形態為例示,具有與本發明之申請專利範圍所記載之技術思想實質上相同之構成且發揮相同之作用效果者無論為何者,均包含於本發明之技術範圍內。於圖3A、圖3B中,例示有於圖4A、圖4B之電漿錐24、25之表面上形成有鉑之塗膜23之構成作為本發明之實施例,但亦可採用於圖5A、圖5B之電漿錐26、27之表面上形成有鉑族金屬或金或其等之合金之塗膜之構成(即,母材整體由鉑形成,且於該鉑母材之表面上形成有塗膜之構成)。藉此,亦可達成與使用圖5A、圖5B之電漿錐26、27之情形同等之感度,並且可降低因鉑母材所產生之雜質背景,進而亦可提高耐久性。 Furthermore, the present invention is not limited to the above embodiment. The above-described embodiments are exemplified, and those having substantially the same configuration as the technical idea described in the patent application of the present invention and exerting the same effects are included in the technical scope of the present invention. 3A and 3B, a configuration in which a coating film 23 of platinum is formed on the surface of the plasma cones 24 and 25 of FIGS. 4A and 4B is exemplified as an embodiment of the present invention, but may be employed in FIG. 5A. The composition of the coating film of the platinum group metal or the alloy of gold or the like is formed on the surface of the plasma cones 26 and 27 of FIG. 5B (that is, the base material is entirely formed of platinum, and is formed on the surface of the platinum base material. The composition of the coating film). Thereby, the sensitivity equivalent to the case of using the plasma cones 26 and 27 of FIGS. 5A and 5B can be achieved, and the background of the impurities generated by the platinum base material can be reduced, and the durability can be improved.

Claims (4)

一種用於感應耦合電漿質譜儀之電漿錐,其在表面具有鉑或鉑以外之鉑族金屬或金或其等之合金的塗膜。  A plasma cone for an inductively coupled plasma mass spectrometer having a coating film of a platinum group metal other than platinum or platinum or an alloy of gold or the like on the surface.   如申請專利範圍第1項之用於感應耦合電漿質譜儀之電漿錐,其中,上述塗膜係由鉑形成。  A plasma cone for an inductively coupled plasma mass spectrometer according to the first aspect of the invention, wherein the coating film is formed of platinum.   一種感應耦合電漿質譜儀,其具備申請專利範圍第1或2項之用於感應耦合電漿質譜儀之電漿錐。  An inductively coupled plasma mass spectrometer having a plasma cone for an inductively coupled plasma mass spectrometer of claim 1 or 2.   一種用於感應耦合電漿質譜儀之電漿錐之製造方法,其藉由離子鍍覆法或電漿CVD法形成表面具有鉑或鉑以外之鉑族金屬或金或其等之合金的塗膜的用於電漿質譜儀之電漿錐之上述塗膜。  A method for manufacturing a plasma cone for an inductively coupled plasma mass spectrometer, which comprises forming a coating film having a platinum group metal other than platinum or platinum or an alloy of gold or the like on the surface by ion plating or plasma CVD. The above coating film for a plasma cone of a plasma mass spectrometer.  
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