TW201828328A - Substrate bonding method and substrate bonding device - Google Patents

Abstract

A substrate bonding device (100) causes a central portion of a bonding surface of a substrate (301) to contact a bonding surface of a substrate (302) with respect to the substrate (301), with the substrate (301) being warped such that the central portion, compared with a peripheral portion, of the bonding surface of the substrate (301) with respect to the substrate (302) protrudes on the substrate (302) side. In this case, the substrate bonding device (100) holds the peripheral portion of the substrate (301) to stop the progress of a temporary bonding of the substrate (301) and the substrate (302). The substrate bonding device (100) then measures a positioning error amount of the substrate (301) with respect to the substrate (302). Thereafter, the substrate bonding device (100) causes the bonding surface of the substrate (301) to be separated from the bonding surface of the substrate (302).

Description

 Substrate bonding method and substrate bonding device  

The present invention relates to a substrate bonding method and a substrate bonding apparatus.

When a bonding method is proposed to measure the positional deviation of the two substrates in a state in which the substrates are in contact with each other, the positions of the two substrates according to the measured positional deviation amount are repeated until the measured positional deviation amount is within the allowable range, and the measured When the positional deviation amount is within the allowable range, the substrates are bonded (for example, refer to the specific document 1). In this bonding method, the amount of positional deviation is measured in a state where the entire bonding surface of one of the substrates contacts the bonding surface of the other substrate.

[Advanced technical literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2011-66287

However, in the bonding method described in the first example, when the positional deviation of the two substrates is not within the allowable range and one of the substrates is separated from the other substrate, the bonding surface of one of the substrates contacts the bonding surface of the other substrate, and is worried. One of the substrates cannot be peeled off from the other substrate. Further, when one of the substrates is forcibly peeled off from the other substrate, there is a fear that the OH group on the substrate interface is damaged, and there is a fear that the device failure of the above bonding method cannot be performed. Therefore, when one of the substrates is peeled off from the other substrate, it must be peeled off with an appropriate pulling pressure.

The present invention has been made in view of the above-described problems. In order to provide a substrate bonding method and a substrate bonding apparatus, it is possible to prevent one of the substrates from being incapable of being separated from each other when the two substrates are again brought into contact after contact between the two substrates. The substrate is peeled off.

In order to achieve the above object, a substrate bonding method according to the present invention is a method of bonding a substrate to a first substrate and a second substrate, and includes a first contact step of a central portion of a bonding surface between the first substrate and the second substrate. a state in which the first substrate is bent in a state in which the first substrate is bent toward the second substrate side, the center portion of the bonding surface of the first substrate is brought into contact with the bonding surface of the second substrate and the first substrate, and the dummy bonding is stopped. The dummy bonding of the first substrate and the second substrate is stopped by holding the peripheral portion of the first substrate; the measuring step measures the amount of positional deviation of the first substrate from the second substrate; and the removing step causes the above The bonding surface of the first substrate is separated from the bonding surface of the second substrate; and the position adjusting step is to adjust the first substrate to the second substrate in a state where the bonding surface of the first substrate and the bonding surface of the second substrate are separated from each other The relative position is such that the amount of positional deviation is reduced; and the second contact step is performed until the positional deviation amount is equal to or less than a predetermined threshold value of the positional deviation. After the step, the measuring step, the detaching step, and the position adjusting step, the first contact step is performed, and the center portion of the bonding surface of the first substrate is brought into contact with the bonding surface of the second substrate, and the The peripheral portion of the first substrate contacts the peripheral portion of the second substrate.

The substrate bonding apparatus of the present invention, which is a substrate bonding apparatus of the first substrate and the second substrate, includes a first support, and has a first holding portion and holds the peripheral portion of the first substrate. The second support base has a second holding portion and is disposed opposite to the first support table, and is supported by the first support table side while holding the second substrate; the pressing portion is supported by the second support unit; The center portion of the first substrate is pressed toward the second substrate side, and the center portion of the bonding surface of the first substrate protrudes toward the second substrate side to bend the first substrate, and the support portion driving portion causes the first support At least one of the second support station and the second support is moved in a first direction in which the first support and the second support are close to each other, or in a second direction in which the first support and the second support are apart from each other; At least one of the first support stage and the second support stage is moved in the first direction by the support stage drive unit, and a central portion of the joint surface of the first substrate is in contact with a joint surface of the second substrate State Measuring a positional deviation of the first substrate from the second substrate in a direction in which the first direction and the second direction are orthogonal; the position adjustment unit is configured to the first direction of the first substrate and the first direction of the second substrate In the direction in which the second direction is orthogonal, the relative position is adjusted to reduce the amount of positional deviation; and the control unit controls the first holding unit, the second holding unit, the pressing unit, the support table driving unit, and the measuring unit. The first position of the position adjustment unit is configured to stop the false engagement of the first substrate and the second substrate by holding the peripheral portion of the first substrate.

According to the present invention, in the substrate bonding apparatus, the center of the bonding surface of the first substrate is formed in a state where the center portion of the bonding surface between the first substrate and the second substrate protrudes toward the second substrate side and the first substrate is bent. The part contacts the joint surface of the second substrate and the first substrate. Here, in the substrate bonding apparatus, the bonding between the first substrate and the second substrate is stopped by holding the peripheral portion of the first substrate. Then, the substrate bonding apparatus measures the positional deviation of the first substrate from the second substrate, and then the bonding surface of the first substrate is separated from the bonding surface of the second substrate. By this, the bonding from the central portion of the first substrate and the second substrate to the peripheral portion is stopped, and the first substrate is brought into contact with the central portion of the second substrate, and the peripheral portions of the first substrate and the second substrate are mutually The shape of the separation. Therefore, when the bonding surface of the first substrate is separated from the bonding surface of the second substrate, the bonding surface of the first substrate gradually moves from the peripheral portion of the first substrate and the second substrate to the second substrate from the second substrate. The joint surface is peeled off. Therefore, it is possible to prevent the first substrate from sticking to the second substrate from being peeled off, and it is possible to prevent the substrate bonding apparatus and the bonding surface (interface) of the first substrate and the second substrate from being adversely affected by the appropriate pressure, and can be peeled off from the second substrate. Lower first substrate.

100‧‧‧Substrate bonding device

200‧‧ ‧ Chamber

201‧‧‧Vacuum pump

202B‧‧‧Exhaust pipe

202C‧‧‧Exhaust pipe

203B‧‧‧Exhaust valve

203C‧‧‧Exhaust valve

301‧‧‧Substrate

301c‧‧‧Central Department

301s‧‧‧Wei

302‧‧‧Substrate

302c‧‧‧Central Department

302s‧‧‧Wei

401‧‧‧ gantry

402‧‧‧Upper

403‧‧‧Rack Drive Department

404‧‧‧Upper drive department

405‧‧‧XY direction drive

406‧‧‧ Lifting drive unit (support table drive unit)

407‧‧‧Rotary Drive Department

408‧‧‧1st pressure sensor

411‧‧‧ Piezoelectric Actuator

412‧‧‧2nd pressure sensor

420‧‧‧Substrate heating department

421, 422‧‧‧ heater

431‧‧‧1st pressing mechanism

431a‧‧‧1st press

431b‧‧‧1st drive department

432‧‧‧2nd pressing mechanism

432a‧‧‧2nd press

432b‧‧‧2nd drive department

440‧‧‧ Holding mechanism (1st holding part, 2nd holding part)

440a~440d‧‧‧Adsorption Department

500‧‧‧Location Measurement Department

501‧‧‧1st Department of Photography

502‧‧‧2nd Department of Photography

503‧‧‧ Window Department

504, 505‧‧ ‧ mirror

600‧‧‧ joint surface treatment device

601‧‧ ‧ Chamber

603‧‧‧ gantry

610‧‧‧Activation Department

611‧‧‧ Plasma source

612‧‧‧ trap board

613‧‧‧ bias power supply

620‧‧‧Hydrophilization Department

621‧‧‧Water vapor generation device

622‧‧‧Supply valve

623‧‧‧Supply tube

700‧‧‧Control Department

701‧‧‧MPU (Micro Processing Unit)

702‧‧‧Main Memory

703‧‧‧Auxiliary Memory Department

704‧‧‧ interface

705‧‧‧Connecting the busbars of the various departments

800‧‧‧ Shape alignment device

801‧‧‧ Distance Measurement Department

802‧‧‧Substrate thickness measurement department

803‧‧‧ gantry

810‧‧‧Edge Identification Sensor

811‧‧‧hair dryer

910‧‧‧Load lock room

920‧‧‧2nd transfer device

921‧‧‧Vacuum transport robot

930‧‧‧1st conveying device

931‧‧‧Atmospheric transport robot

940‧‧‧cleaning device

950‧‧‧Reversal device

961‧‧‧Introduction

962‧‧‧ Take out the 埠

2401‧‧‧Rack

2402‧‧‧Upper

3401‧‧‧ gantry

3402‧‧‧Upper

3440‧‧‧Electrical chuck

C1‧‧ Center

G1, G2‧‧‧ distance

GAa, GAb‧‧‧ photographic images

MK1a, MK1b, MK2a, MK2b‧‧‧ alignment marks

P0‧‧‧bend

S71, S72‧‧ ‧ gap

[Fig. 1] is a schematic configuration diagram of a substrate bonding system according to an embodiment of the present invention; [Fig. 2A] is a schematic front view of a shape alignment device according to an embodiment; [Fig. 2B] is an embodiment according to an embodiment. (3) is a schematic front view of the inside of the substrate bonding apparatus according to the embodiment; [Fig. 4A] is a schematic view showing the configuration of the holding mechanism provided on the gantry according to the embodiment. The front view; [Fig. 4B] is a schematic cross-sectional view showing the structure of the gantry and the upper end according to the embodiment; [Fig. 5A] is a schematic perspective view showing the vicinity of the gantry and the upper end according to the embodiment; [Fig. 5B] A method for finely adjusting the upper end according to the embodiment; [FIG. 6A] shows two alignment marks provided on one of the two bonded substrates; [FIG. 6B] shows the two substrates bonded together. Two alignment marks provided on the other of the two; [FIG. 7A] is a schematic view showing a captured image of the alignment mark of the substrate; [FIG. 7B] is a schematic view showing a state in which the alignment marks of the substrate are deviated from each other; [Fig. 8] shows the control according to the embodiment FIG. 9 is a flow chart showing a flow of a substrate bonding process performed by the substrate bonding apparatus according to the embodiment. FIG. 10 is a view for explaining two substrates calculated by the substrate bonding apparatus according to the embodiment. [Fig. 11A] is a schematic cross-sectional view showing a state in which the substrate is held by the gantry and the upper end according to the embodiment; [Fig. 11B] shows a state close to the gantry and the upper end according to the embodiment. FIG. 12A is a view showing a state in which the center of the two substrates is brought into contact with each other by the substrate bonding apparatus according to the embodiment; [FIG. 12B] shows one of the substrate bonding apparatuses according to the embodiment. FIG. 13 is a view showing a state in which one substrate is separated from the other substrate by the substrate bonding apparatus according to the embodiment; [FIG. 14A] shows a substrate bonding apparatus according to the embodiment. FIG. 14B is a view showing a state in which two substrates are joined by a substrate bonding apparatus according to the embodiment; [FIG. 15A] shows a substrate according to a modification. FIG. 15B is a view showing a state in which one of the substrates is separated from the other substrate by the substrate bonding apparatus according to the modification; [FIG. 16A] shows FIG. 16B is a view showing a state in which the center of the two substrates is in contact with each other by the substrate bonding apparatus according to the modification; [FIG. 16B] is a state diagram in which the center of the two substrates is brought into contact with each other by the substrate bonding apparatus according to the modification; FIG. 17 is a view showing a state in which the center of the two substrates is brought into contact by the substrate bonding apparatus according to the modification; FIG. 18A is a view showing a state in which the substrate and the upper end of the substrate are held by the substrate bonding apparatus according to the modification. [FIG. 18B] FIG. 18A is a view showing a state in which the substrate and the upper end of the substrate bonding apparatus according to the modification are held; and FIG. 19A is a view showing the substrate bonding apparatus according to the modification, in which one substrate is separated from the other substrate. [FIG. 19B] FIG. 19B is a view showing a state in which two substrates are held by an electrostatic chuck in a substrate bonding apparatus according to a modification; [FIG. 20A] shows a state in which two substrates are held by a substrate bonding apparatus according to a modification. FIG.; And [20B of FIG] measured bending amount based display state diagram of one substrate bonding apparatus according to a modification of the substrate.

Hereinafter, a substrate bonding apparatus according to an embodiment of the present invention will be described with reference to the drawings.

According to the substrate bonding apparatus of the present embodiment, after the bonding surface of the two substrates is subjected to activation treatment and hydrophilization treatment in a sealed chamber under reduced pressure, the substrates are brought into contact with each other, and two are joined by pressurization and heating. Substrate device. The activation treatment causes the bonding surface of the substrate to strike a specific particle and activate the bonding surface of the substrate. Further, in the hydrophilization treatment, the joint surface of the substrate is hydrophilized by supplying water in the vicinity of the joint surface of the substrate activated by the activation treatment.

According to the substrate joining system of the present embodiment, as shown in Fig. 1, the introduction 埠961, the take-out 埠962, the first transfer device 930, the cleaning device 940, the external alignment device 800, the reversing device 950, and the joint surface treatment are included. The device 600, the substrate bonding apparatus 100, the second transfer device 920, the control unit 700, and the load lock chamber 910. In the first conveying device 930, in the cleaning device 940, and in the external alignment device 800, a HEPA (High Efficiency Particulate Air) filter (not shown) is provided, and the inside of the device becomes a clean atmospheric pressure ring. . On the other hand, in the inversion device 950, the inside of the joint surface processing apparatus 600 and the substrate bonding apparatus 100 are set to vacuum air. The control unit 700 controls the first conveying device 930, the cleaning device 940, the external alignment device 800, the reversing device 950, the bonding surface processing device 600, the substrate bonding device 100, and the second transfer device 920. The two substrates 301 and 302 joined to each other are first placed in the lead-in 961. Then, the substrates 301 and 302 are transported by the air transport robot 931 of the first transport device 930 from the lead-in 961 to the cleaning device 940, and the cleaning device 940 removes the foreign matter present on the substrates 301 and 302. Next, the substrates 301 and 302 are transported from the cleaning device 940 to the outline aligning device 800 by the atmospheric transfer robot 931, and the outer shape alignment device 800 performs the measurement of the substrate thickness while also performing the outer shape alignment. Thereafter, the substrates 301 and 302 are transported by the atmospheric transfer robot 931 into the load lock chamber 910 in which the atmosphere is opened. Then, by discharging the gas existing in the load lock chamber 910, the degree of vacuum in the load lock chamber 910 becomes the same as the degree of vacuum in the second transfer device 920, and the substrates 301 and 302 are formed. The second transfer device 920 transports the past to the bonding surface processing device 600 and the substrate bonding device 100. Here, the substrate 302 is transported to the inverting device 950, and is reversed and reversed in the inverting device 950, and then transferred to the substrate bonding apparatus 100. The substrates 301 and 302 perform activation treatment and hydrophilization treatment of those joint surfaces in the joint surface processing apparatus 600. Thereafter, the substrates 301 and 302 are bonded to each other in the substrate bonding apparatus 100. The second transfer device 920 includes a vacuum transfer robot 921, and the vacuum transfer robot 921 moves the substrates 301 and 302 from the load lock chamber 910 to the joint surface processing device 600 from the joint surface processing device 600. The device 950 or the substrate bonding apparatus 100 is transported. The substrates 301 and 302 joined to each other in the substrate bonding apparatus 100 are transported by the vacuum transfer robot 921 to the load lock chamber 910. Thereafter, when the atmosphere is loaded into the load lock chamber 910, the substrates 301 and 302 joined to each other are taken out from the load lock chamber 910 by the atmospheric transfer robot 931, and are transported to the take-out cassette 962.

The outline alignment device 800 has an edge recognition sensor 810, a substrate thickness measurement unit 802, and a stage 803 as shown in FIG. 2A. The gantry 803 is rotatable around a central axis on which the mounting surfaces of the substrates 301 and 302 are placed. The edge recognition sensor 810 recognizes the edges of the substrates 301, 302 using a laser. The substrate thickness measuring unit 802 is composed of a laser displacement meter, and measures the thickness of the substrates 301 and 302 without contacting the substrates 301 and 302. The outer shape alignment device 800 rotates the substrates 301 and 302 by rotating the stage 803 (see an arrow AR11 in FIG. 2A), and the edge recognition sensor 810 recognizes the edges of the substrates 301 and 302 while measuring the thickness of the substrate. The portion 802 measures the thickness of the substrates 301, 302.

As shown in FIG. 2B, the joint surface processing apparatus 600 includes a chamber 601, an activation treatment unit 610, a hydrophilization treatment unit 620, and a stage 603 on which the substrates 301 and 302 are placed. The chamber 601 is connected to the vacuum pump 201 via an exhaust pipe 202B and an exhaust valve 203B. When the exhaust valve 203B is in the open state and the vacuum pump 201 is operated, the gas in the close chamber 601 is discharged to the outside of the close chamber 601 through the exhaust pipe 202B, and the air pressure in the close chamber 601 is lowered (reduced pressure). The activation processing unit 610 has a plasma generation source 611, a trap plate 612, and a bias power source 613. When the plasma is generated by the plasma generating source 611, the activation processing unit 610 has a configuration in which only the atomic groups passing through the trap plate 612 are descended toward the stage 603. Further, if the plasma generating source 611 is an ICP (Inductively Coupled Plasma) device, the trap plate may not be provided because the ions are trapped by the coil. Further, the bias power source 613 applies an alternating current voltage to the substrates 301 and 302 placed on the stage 603, and attracts ions having kinetic energy in the vicinity of the bonding faces of the substrates 301 and 302, and causes the ions to repeatedly collide with the substrates 301 and 302 by the alternating electric field. The jacket area is created. Then, by the bias power source 613, ions having kinetic energy generated in the vicinity of the bonding faces of the substrates 301 and 302 are ion-etched to bond the bonding faces of the substrates 301 and 302, and those bonding faces are processed via atomic groups, and those bonding faces can be highly efficient. An OH group is produced.

The hydrophilization treatment unit 620 adheres water or contains an OH substance to the joint surfaces of the substrates 301 and 302 activated by the activation treatment unit 610 to hydrophilize the joint surfaces of the substrates 301 and 302. The hydrophilization treatment unit 620 supplies water (H ₂ O) to the periphery of the joint surfaces of the substrates 301 and 302 in the close chamber 601, and performs a hydrophilization treatment. The hydrophilization treatment unit 620 includes a water vapor generation device 621, a supply valve 622, and a supply pipe 623. The steam generating device 621 generates water vapor by bubbling a carrier gas such as argon (Ar), nitrogen (N ₂ ), helium (He), or oxygen (O ₂ ) in the stored water. The flow rate of the water vapor and the carrier gas is adjusted by controlling the opening degree of the supply valve 622.

As shown in FIG. 3, the substrate bonding apparatus 100 includes a closet 200, a gantry (support stand, first support stand) 401, an upper end (support stand, second support stand) 402, a gantry drive unit 403, and an upper drive unit. 404. The substrate heating unit 420 and the position measuring unit 500. Further, the substrate bonding apparatus 100 includes a distance measuring unit (not shown) that measures the distance between the gantry 401 and the upper end 402, and a blower (second gas discharging unit) 811 that discharges the gas. In the following description, the ±Z direction in the third diagram is the vertical direction and the XY direction is the horizontal direction as appropriate.

The chamber 200 is connected to the vacuum pump 201 via an exhaust pipe 202C and an exhaust valve 203C. When the exhaust valve 203C is in the open state and the vacuum pump 201 is operated, the gas in the close chamber 200 is discharged to the outside of the close chamber 200 through the exhaust pipe 202C, and the air pressure in the close chamber 200 is lowered (reduced pressure). Further, by changing the amount of opening and closing of the exhaust valve 203C, the air pressure (vacuum degree) in the airtight chamber 200 can be adjusted by adjusting the amount of exhaust gas. Further, a window portion 503 used to measure the relative position between the substrates 301 and 302 by the position measuring unit 500 is provided in a part of the closet 200.

The gantry 401 and the upper end 402 are disposed in opposite directions in the Z direction in the chamber 200. The gantry 401 supports the substrate 301 and the upper end 402 thereon, and supports the substrate 302 with the lower surface thereof. Further, the upper surface of the gantry 401 and the lower surface of the upper end 402, the contact faces of the substrates 301 and 302 with the gantry 401 and the upper end 402 are mirror surfaces, and it is considered that it is difficult to peel off the gantry 401 and the upper end 402, and rough surface processing may be performed. . As shown in FIG. 4A, the gantry 401 and the upper end 402 have holding means (first holding portion, second holding portion) 440 for holding the substrates 301 and 302, and a first pressing mechanism 431 for pressing the central portion of the substrate 301 and pressing. The second pressing mechanism 432 at the center of the substrate 302. The holding mechanism 440 is configured by a vacuum chuck having a plurality of (four in FIG. 4A) annular adsorption portions (secondary holding portions) 440a, 440b, 440c, and 440d. The adsorption portions 440a, 440b, 440c, and 440d are provided in a region where the substrates 301 and 302 are placed on the stage 401 and the upper end 402. The adsorption portions 440a, 440b, 440c, and 440d have different diameters and are arranged concentrically. The substrates 301 and 302 are held by the gantry 401 and the upper end 402 in a state where the ejector 401 and the upper end 402 are adsorbed by the adsorption portions 440a, 440b, 440c, and 440d. Here, the adsorption portions 440a and 440b are opposed to the center portions of the substrates 301 and 302, and the adsorption portions 440c and 440d are opposed to the peripheral portions of the substrates 301 and 302.

Each of the adsorption portions 440a, 440b, 440c, and 440d can obtain a state in which the substrates 301 and 302 are adsorbed and a state in which they are not adsorbed. For example, in a state where the suction portions 440a and 440b disposed on the inner side of the gantry 401 and the upper end 402 are not vacuum-adsorbed, the suction portions 440c and 440d disposed on the outer side of the gantry 401 and the upper end 402 may be vacuum-adsorbed. Further, the distance L1 between the adsorption portion 440a located at the center C1 closest to the gantry 401 and the upper end 402, the distance L2 between the adsorption portion 440a and the adsorption portion 440b adjacent to the adsorption portion 440a on the outer side, and the adsorption portion 440b and the outer adjacent adsorption portion The distance L3 between the adsorption portions 440c of 440b and the distance L4 between the adsorption portion 440c and the outermost adsorption portion 440d determine the fixed positions of the substrates 301 and 302.

The first pressing mechanism 431 is provided at the center of the gantry 401 as shown in FIG. 4B, and the second pressing mechanism 432 is provided at the center of the upper end 402. The first pressing mechanism 431 has a first pressing portion 431a on the side of the upper end 402 and a first pressing driving portion 431b that drives the first pressing portion 431a. The second pressing mechanism 432 has a second pressing portion 432a on the side of the gantry 401 and a second pressing driving portion 432b that drives the second pressing portion 432a. The pressing drive units 431b and 432b can be configured to drive the first and second pressing portions 431a and 432a by, for example, controlling the air pressure in the cylinder gas bottle that is embedded in a part of the first and second pressing portions 431a and 432a. Alternatively, a voice coil motor (Voice Coil Motor) may be used as the first and second pressing drive units 431b and 432b. The substrate 301 in the first and second pressing portions 431a and 432a and the top portion of the substrate 302 are in contact with each other to have a dome shape. Further, the first and second pressing portions 431a and 432a are controlled to maintain a constant pressure control applied to the substrates 301 and 302 and to maintain a constant positional control of the contact positions of the control substrates 301 and 302. For example, the first control unit 431a and the second pressure control unit 432a are pressed by the position control unit, and the substrates 301 and 302 are pressed at a constant position with a constant pressure.

The substrate heating unit 420 is composed of heaters 421 and 422. The heaters 421 and 422 are composed of, for example, an electrothermal heater. The heaters 421 and 422 heat the substrates 301 and 302 via the substrates 301 and 302 supported by the stage 401 and the upper end 402. Further, by adjusting the amount of heat generated by the heaters 421 and 422, the temperatures of the substrates 301 and 302 and the joint surfaces can be adjusted.

Returning to Fig. 3, the gantry driving unit 403 can move the gantry 401 in the XY direction and rotate around the Z axis.

The upper end drive unit 404 has an elevation drive unit (support table drive unit) 406 that moves up and down the upper end 402 in the upward direction (second direction) or the downward direction (first direction) (see the arrow AR1 in FIG. 3), and makes the XY direction The XY direction drive unit 405 in which the upper end 402 moves and the rotation drive unit 407 that rotates the upper end 402 in the rotation direction around the Z axis (see the arrow AR2 in FIG. 3). The XY direction drive unit 405 and the rotation drive unit 407 constitute a position adjustment unit, and adjust the relative position of the substrate 301 in the direction orthogonal to the vertical direction of the substrate 302 (the XY direction and the rotation direction around the Z axis). Further, the upper end driving portion 404 has a piezoelectric actuator 411 for adjusting the inclination of the upper end 402 to the gantry 401, and a second pressure sensor 412 for measuring the pressure applied to the upper end 402. The XY direction drive unit 405 and the rotation drive unit 407 can align the substrate 301 and the upper end 402 held by the gantry 401 by relatively moving the upper end 402 to the stage 401 in the rotation directions around the X direction, the Y direction, and the Z axis. The substrate 302 is held.

The elevation drive unit 406 moves the upper end 402 to the lower end 402 by moving the upper end 402 downward. Further, the elevation drive unit 406 separates the gantry 401 from the upper end 402 by moving the upper end 402 upward. The upper end 402 is moved downward by the elevation drive unit 406, and the substrate 301 held by the stage 401 is in contact with the substrate 302 held by the upper end 402. Then, in a state in which the substrates 301 and 302 are in contact with each other, when the lifting/lowering driving unit 406 acts on the driving force of the upper end 402 in the direction toward the gantry 401, the substrate 302 is pressed against the substrate 301. Further, the first pressure sensor 408 is provided in the elevation drive unit 406, and the driving force acting on the upper end 402 toward the gantry 401 is measured by the elevation drive unit 406. When the substrate 302 is pressed against the substrate 301 by the elevation driving unit 406 based on the measured value of the first pressure sensor 408, the pressure acting on the bonding surfaces of the substrates 301 and 302 can be detected. The first pressure sensor 408 is composed of, for example, a load cell (LOAD CELL).

As shown in FIG. 5A, each of the piezoelectric actuator 411 and the second pressure sensor 412 has three. The three piezoelectric actuators 411 and the three second pressure sensors 412 are disposed between the upper end 402 and the XY direction driving unit 405. The three piezoelectric actuators 411 are fixed to the upper surface of the upper end 402 at three positions on the same straight line, and three of the upper peripheral portions of the circular upper end 402 are equally spaced along the circumferential direction of the upper end 402. position. The three second pressure sensors 412 are connected to the upper end portion of the piezoelectric actuator 411 and the lower surface of the XY direction driving portion 405, respectively. The three piezoelectric actuators 411 can be expanded and contracted in the vertical direction. Then, by the three piezoelectric actuators 411, the inclination of the periphery of the X-axis and the periphery of the Y-axis and the position of the upper end 402 in the vertical direction are finely adjusted. For example, as shown by the broken line in FIG. 5B, when the upper end 402 is inclined to the stage 401, one of the three piezoelectric actuators 411 is extended (refer to the arrow AR3 of FIG. 5B) by adjusting the upper end 402. In the posture, the lower surface of the upper end 402 and the upper surface of the gantry 401 can be made parallel. Further, the three second pressure sensors 412 measure the pressing force at the three positions below the upper end 402. Then, in order to make the pressing forces measured by the three second pressure sensors 412 equal, by driving the three piezoelectric actuators 411 separately, while keeping the lower surface of the upper end 402 parallel to the upper surface of the stage 401, it is possible to make The substrates 301, 302 are in contact with each other.

The distance measuring unit is configured by a laser distance meter, and does not contact the gantry 401 and the upper end 402, and measures the distance between the gantry 401 and the upper end 402. Specifically, for example, when the upper end 402 is transparent, the distance measuring unit is between the reflected light on the upper surface of the stage 401 and the reflected light on the lower surface of the upper end 402 when the laser light is irradiated from the upper side of the upper end 402 to the stage 401. The difference is the distance between the gantry 401 and the upper end 402. As shown in FIG. 5A, the distance measuring unit has three portions P11, P12, and P13 on the upper surface of the gantry 401 and three portions P21 of the opposing portions P11, P12, and P13 in the Z direction on the lower surface of the upper end 402. The distance between P22 and P23.

Returning to Fig. 3, the position measuring unit (measuring unit) 500 measures the amount of positional deviation between the substrate 301 and the substrate 302 in the direction orthogonal to the vertical direction (the direction of rotation in the XY direction and the Z-axis). The position measuring unit 500 has a first imaging unit 501, a second imaging unit 502, and mirrors 504 and 505 in a plurality (two in FIG. 3). Each of the first imaging unit 501 and the second imaging unit 502 has an imaging element (not shown) and a coaxial illumination system. As the light source of the coaxial illumination system of the first imaging unit 501 and the second imaging unit 502, a light source that emits light (for example, infrared light) that passes through the substrates 301 and 302 and the gantry 401 and the window portion 503 provided in the closet 200 is used.

For example, as shown in FIGS. 6A and 6B, two symbols (hereinafter referred to as "alignment marks") MK1a and MK1b are provided in the substrate (first substrate) 301, and two are provided in the substrate (second substrate) 302. Align the marks MK2a, MK2b. In the substrate bonding apparatus 100, the position measuring unit 500 recognizes the positions of the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the both substrates 301 and 302, and performs the positional matching operation (alignment operation) of the two substrates 301 and 302. . More specifically, in the substrate bonding apparatus 100, first, the position measuring unit 500 recognizes the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the substrates 301 and 302, and performs rough alignment operations of the substrates 301 and 302 (rough). In the alignment operation, the two substrates 301 and 302 are opposed to each other. After that, the substrate bonding apparatus 100 recognizes the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the both substrates 301 and 302 while the position measuring unit 500 is in the state in which the two substrates 301 and 302 are opposed to each other. Exquisite alignment action (fine alignment action).

Here, as shown in FIG. 3, the light emitted from the light source (not shown) of the coaxial illumination system of the imaging unit (first imaging unit) 501 is reflected upward by the mirror 504, and passes through the window portion 503 and the substrate 301. Part or all of 302 (refer to the dashed arrows SC1, SC2 of Fig. 3). Part or all of the light transmitted through the substrates 301 and 302 is reflected by the alignment marks MK1a and MK2a of the substrates 301 and 302, and proceeds downward, and the transmission window 503 reflects the imaging element incident on the first imaging unit 501 by the mirror 504. Further, the light emitted from the light source (not shown) of the coaxial illumination system of the imaging unit (second imaging unit) 502 is reflected upward by the mirror 505, and passes through a part or all of the window portion 503 and the substrates 301 and 302. Part or all of the light transmitted through the substrates 301 and 302 is reflected by the alignment marks MK1a and MK2a of the substrates 301 and 302, and proceeds downward, and the transmission window 503 reflects the imaging element incident on the second imaging unit 502 with the mirror 505. In this manner, as shown in FIG. 7A, the position measuring unit 500 acquires the captured image GAa including the alignment marks MK1a and MK2a of the two substrates 301 and 302, and the alignment marks MK1b and MK2b including the two substrates 301 and 302. Photographic image GAb. In addition, the imaging operation of the captured image GAa generated by the first imaging unit 501 and the imaging operation of the captured image GAb generated by the second imaging unit 502 are simultaneously performed. Moreover, the measurement position of the positional deviation amount of the measurement substrates 301 and 302 is determined according to the adsorption position (holding position) of the 301 of the substrate 301 which is adsorbed (held) to the stage 401. Specifically, when the substrates 301 and 302 are adsorbed by the adsorption portions 440c and 440d, the measurement positions of the positional deviation amounts of the substrates 301 and 302 are measured and set at least inside the adsorption portion 440c.

The blower 811 is disposed on the side of the gantry 401 and the upper end 402, and is parallel to the upper surface of the gantry 401 and the lower surface of the upper end 402, and discharges gas to the central portion of the gantry 401 and the upper end 402. The gas discharged from the blower 811 is usually nitrogen or an inert gas, but sometimes it is preferable to use a gas containing moisture in the hydrophilization bonding.

As shown in FIG. 8, the control unit 700 includes an MPU (Micro Processing Unit) 701, a main memory unit 702, an auxiliary storage unit 703, an interface 704, and a bus bar 705 that connects the respective units. The main memory unit 702 is composed of a volatile memory and serves as a work area of the MPU 701. The auxiliary memory unit 703 is composed of a non-volatile memory and memorizes a program for executing the MPU 701. Further, the auxiliary memory unit 703 also stores the predetermined positional deviation amount threshold values Δxth, Δyth, and Δθ th for the relative calculated positional deviation amounts Δx, Δy, and Δθ of the substrates 301 and 302 to be described later. The following interface 704 converts the measurement signals input from the first pressure sensor 408, the second pressure sensor 412, the distance measuring unit 801, the substrate thickness measuring unit 802, and the edge recognition sensor 810 into measurement information, and outputs the measurement information to the bus bar 705. Further, the interface 704 converts the captured image signals input from the first imaging unit 501 and the second imaging unit 502 into captured image information, and outputs the captured image information to the bus bar 705. Further, the MPU 701 re-executes the program stored in the auxiliary storage unit 703 to the main memory unit 702, and outputs a control signal to the holding mechanism 440, the piezoelectric actuator 411, the first driving unit 431b, and the first via the interface 704. 2 drive unit 432b, substrate heating unit 420, gantry drive unit 403, upper end drive unit 404, blower 811, activation processing unit 610, hydrophilization treatment unit 620, vacuum transfer robot 921, and air transport robot 931.

As shown in FIG. 7B, the control unit 700 calculates the positional deviation amounts Δxa and Δ between the one set of alignment marks MK1a and MK2a provided in the substrates 301 and 302 based on the captured image GAa acquired from the first imaging unit 501. Ya. Further, Fig. 7B shows a state in which one set of alignment marks MK1a and MK2a are deviated from each other. Similarly, the control unit 700 calculates the positional deviation amounts Δxb and Δyb between the other group of alignment marks MK1b and MK2b provided in the substrates 301 and 302 based on the captured image GAb acquired from the second imaging unit 502.

Thereafter, the control unit 700 calculates the rotation directions around the X direction, the Y direction, and the Z axis based on the geometrical relationship between the positional deviation amounts Δxa, Δya, Δxb, and Δyb of the two sets of alignment marks and the two sets of marks. The positional deviation amounts Δx, Δy, and Δθ of the two middle substrates 301 and 302. Then, the control unit 700 moves the upper end 402 in the X direction and the Y direction or rotates around the Z axis in order to lower the calculated positional deviation amounts Δx, Δy, and Δθ. Thereby, the relative positional deviation amounts Δx, Δy, and Δθ of the two substrates 301 and 302 are reduced. In this manner, the substrate bonding apparatus 100 performs a fine alignment operation of correcting the positional deviation amounts Δx, Δy, and Δθ of the two substrates 301 and 302 in the horizontal direction.

Next, the substrate bonding process performed by the substrate bonding apparatus 100 of the present embodiment will be described with reference to FIGS. 9 to 14B. In the substrate bonding process, the system control unit 700 starts a program for executing the substrate bonding process as a start. In addition, in FIG. 9, it is assumed that the substrates 301 and 302 are transported by the first transport device 930 to the external alignment device 800.

First, as shown in FIG. 9, the outline alignment device 800 measures the thicknesses t1 and t2 of the substrates 301 and 302 by the substrate thickness measuring unit 802 (step S1). At this time, the substrate thickness measuring unit 802 measures the thickness in a plurality of places (for example, three places) of the substrates 301 and 302. Then, the control unit 700 calculates the average value of the plurality of measured values measured by the substrate thickness measuring unit 802 as the thicknesses t1 and t2 for each of the substrates 301 and 302 (see FIG. 10). Then, each of the substrates 301 and 302 whose thickness measurement is completed is transported from the external alignment device 800 to the load lock chamber 910 by the vacuum transfer robot 921 of the second transfer device 920. Then, when the gas existing in the discharge lock chamber 910 is discharged and the degree of vacuum in the lock chamber 910 is the same as the degree of vacuum in the second transfer device 920, the substrates 301 and 302 are processed by the second transfer device 920 to the joint surface. The device 600 is transported.

Then, the bonding surface treatment apparatus 600 performs the activation treatment of the bonding surfaces of the activated substrates 301 and 302 by the activation processing unit 610, and the hydrophilization processing unit 620 performs the hydrophilization treatment of the bonding surfaces of the hydrophilized substrates 301 and 302 (hydrophilic treatment). Processing step) (step S2). Here, first, the activation processing unit 610 activates the bonding surfaces of the substrates 301 and 302 by causing the kinetic energy ions to collide with the bonding surfaces of the substrates 301 and 302. Then, the hydrophilization treatment unit 620 introduces the water vapor generated in the steam generating device 621 into the chamber 200 through the supply pipe 623 together with the carrier gas. Thereby, a layer in which a hydroxyl group (OH group) is terminated is formed on the bonding surface of the substrates 301 and 302.

Next, in the substrate bonding apparatus 100, the distance between the upper surface of the gantry 401 and the lower surface of the upper end 402 is measured by the distance measuring unit 801 in a state where the substrates 301 and 302 are not held by the stage 401 and the upper end 402 (step S3). . At this time, as shown in FIG. 5A, the distance measuring unit 801 measures between the three portions P11, P12, and P13 on the upper surface of the gantry 401 and the corresponding three portions P21, P22, and P23 in the lower surface of the upper end 402, respectively. distance. Then, the control unit 700 calculates the average value of the three measured values measured by the distance measuring unit 801 as the distance G1 (refer to FIG. 10).

After the substrates 301 and 302 having been subjected to the activation treatment and the hydrophilization treatment are transported from the bonding surface processing apparatus 600 to the substrate bonding apparatus 100 by the vacuum transfer robot 921 of the second transfer apparatus 920, the substrate bonding apparatus 100 holds the substrate 301. 302 (step S4). At this time, the substrates 301 and 302 are, for example, as shown by the arrows in FIG. 11A, in the state in which the adsorption portions 440a, 440b, 440c, and 440d provided in the gantry 401 and the upper end 402 are all adsorbed, the gantry 401 and the upper end are used. 402 remains. Here, the substrate bonding apparatus 100 performs the above-described rough alignment operation on the substrates 301 and 302.

Next, the substrate bonding apparatus 100 calculates the distance between the substrates 301 and 302 based on the distance G1 between the stage 401 and the upper end 402 and the thicknesses t1 and t2 of the substrates 301 and 302 (step S5). Here, the control unit 700 calculates the distance G2 between the substrates 301 and 302 based on the thicknesses t1 and t2 of the substrates 301 and 302 and the distance G1 between the gantry 401 and the upper end 402 (see FIG. 10).

Returning to Fig. 9, next, the substrate bonding apparatus 100 moves the upper end 402 downward in the vicinity of the substrates 301 and 302 (step S6). As shown in FIG. 11B, the substrate bonding apparatus 100 moves the upper end 402 downward by a distance G11 which is shorter than the distance G2 until the distance between the substrates 301 and 302. This distance G11 is set to a distance that can be contacted between the substrates 301 and 302 by bending the substrates 301 and 302 as will be described later. The distance G11 is set, for example, to about 30 μm (micrometers). Further, the substrate bonding apparatus 100 calculates the amount of movement for making the distance between the substrates 301 and 302 the upper end 402 of the distance G11 based on the calculated distance G2 between the substrates 301 and 302, and shifts only the amount of movement calculated by the upper end 402.

Thereafter, in the substrate bonding apparatus 100, the position measuring unit 500 measures the relative positional deviation of the substrates 301 and 302 (step S7). Here, the control unit 700 first acquires the captured image GAa of the two substrates 301 and 302 (see FIG. 11B) in the non-contact state, based on the first imaging unit 501 and the second imaging unit 502 of the position measuring unit 500. Gab (refer to Figure 7A). Then, the control unit 700 calculates the positional deviation amounts Δx, Δy, and Δθ of the rotation directions of the two substrates 301 and 302 in the X direction, the Y direction, and the Z axis, based on the two captured images GAa and Gab. Specifically, the control unit 700 calculates the positional deviation amounts Δxa and Δya (see FIG. 7B) by using the vector correlation method, for example, based on the simultaneous reading of the captured image GAa of the alignment marks MK1a and MK2a in the Z direction. Similarly, the positional deviation amounts Δxb and Δyb are calculated by the vector correlation method based on the photographic image GAb in which the alignment marks MK1b and MK2b in the Z direction are simultaneously read (see FIG. 7B). Then, the control unit 700 calculates the positional deviation amounts Δx, Δy, and Δθ of the two substrates 301 and 302 in the horizontal direction based on the positional deviation amounts Δxa, Δya, Δxb, and Δyb.

Then, in order to correct the relative positional deviation amounts Δx, Δy, and Δθ of the calculated substrates 301 and 302, the substrate bonding apparatus 100 performs positional matching by relatively moving the substrate 302 to the substrate 301 (step S8). In the state in which the gantry 401 is fixed, the substrate bonding apparatus 100 moves the upper end 402 in the rotational directions around the X direction, the Y direction, and the Z axis in order to cancel the positional deviation amounts Δx, Δy, and Δθ.

Next, in the substrate bonding apparatus 100, the substrates 301 and 302 are bent in a state where the substrates 301 and 302 are separated by the distance G11 (step S9). In the substrate bonding apparatus 100, for example, as shown in FIG. 12A, the peripheral portion 301s of the bonding surface of the substrate 301 is bent in a shape in which the central portion 301c protrudes toward the substrate 302 side. At this time, the substrate bonding apparatus 100 adsorbs the substrate 301 by the two adsorption portions 440c and 440d on the peripheral side of the gantry 401, and stops the substrate 301 generated by the two adsorption portions 440a and 440b on the center side of the gantry 401 ( Refer to arrows AR41, AR42) of Fig. 12A. At this time, the substrate bonding apparatus 100 holds the substrate 301 and the upper end 402 at the two adsorption positions (holding positions) having different distances from the central portions of the substrates 301 and 302 in the peripheral portions of the substrates 301 and 302. . Then, in the state in which the gantry 401 sucks (holds) the peripheral portion 301s of the substrate 301, the first pressing portion 431a presses the central portion of the substrate 301 toward the substrate 302 side. Thereby, the substrate 301 is bent so that the central portion 301c of the joint surface protrudes toward the substrate 302 side. Further, as shown in FIG. 12A, the substrate bonding apparatus 100 bends the substrate 302 in a shape in which the central portion 302c protrudes toward the substrate 301 side with respect to the peripheral portion 302s of the bonding surface of the substrate 302. At this time, in the substrate bonding apparatus 100, the two adsorption portions 440c and 440d on the peripheral side of the upper end 402 adsorb the substrate 302, and stop the adsorption of the substrate 302 by the two adsorption portions 440a and 440b on the central portion side of the upper end 402. Arrows AR41, AR42) of Fig. 12A. Then, in the substrate bonding apparatus 100, the upper end 402 is pressed (holds) the peripheral portion 302s of the substrate 302, and the second pressing portion 432a presses the central portion of the substrate 302 toward the substrate 301 side. Thereby, the substrate 302 is bent so that the central portion 302c of the joint surface protrudes toward the substrate 301 side.

Here, the adsorption operation of each of the four adsorption portions 440a, 440b, 440c, and 440d is based on the ease with which the substrate 301 is peeled off from the substrate 302, the position due to the positional deviation of the false joint between the substrates 301 and 302, and the substrate. The vibration stop position of the substrate 302 to the substrate 301 is determined by the substrate 302 in the false engagement state with the substrate 302. When the area of the area where the dummy joints are formed between the substrates 301 and 302 is larger than the first area of a predetermined size, the substrate 302 cannot be peeled off from the substrate 301. On the other hand, when the area of the area where the dummy joint is formed between the substrates 301 and 302 is less than the second area of a predetermined size smaller than the first area, the positional deviation due to the false joint between the substrates 301 and 302 does not occur, or When the area of the area where the dummy bonding is performed between the substrates 301 and 302 is less than the third area of a predetermined size smaller than the first area, the substrate 302 vibrates against the substrate 301. Then, the four adsorption portions 440a, 440b, 440c, and 440d perform the adsorption operation in order to make the area of the region where the substrates 301 and 302 are falsely joined to be equal to or smaller than the first area and the second area. In the present embodiment, the adsorption portions 440c and 440d adsorb the substrates 301 and 302, and the adsorption portions 440a and 440b stop the adsorption of the substrates 301 and 302. However, the "substrate 301 is easily separated from the substrate 302" and the "cause" are caused by the substrate. The position where the false joint between 301 and 302 deviates from the generated position" and the position of the vibration of the substrate 301 on the substrate 301 in the false joint state of the substrate 301 and the substrate 302 may be such that only the adsorption portion 440d adsorbs the substrate. 301, 302, the adsorption portions 440a, 440b, 440c stop the adsorption of the substrates 301, 302. Alternatively, it is preferable that the adsorption portions 440b, 440c, and 440d adsorb the substrates 301 and 302, and only the adsorption portion 440a stops the adsorption of the substrates 301 and 302. According to the substrate bonding apparatus 100 of the present embodiment, in the most appropriate adsorption position determined by the substrates 301 and 302, in order to adsorb the substrates 301 and 302, the adsorption operations of the plurality of adsorption units 440a, 440b, 440c, and 440d can be controlled.

Then, the substrate bonding apparatus 100 increases the amount of protrusion of the first pressing portion 431a of the gantry 401 and the amount of protrusion of the second pressing portion 432a of the upper end 402, so that the center portion of the bonding surface of the two substrates 301 and 302 is Inter-contact (step S10). In other words, as shown in FIG. 12A, the substrate bonding apparatus 100 has a bonding surface of the substrate 301 in a state where the center portion of the bonding surface between the substrate 301 and the substrate 302 is protruded toward the substrate 302 and the substrate 301 is bent. The central portion contacts the joint surface of the substrate 302 and the substrate 301 (first contact step). Thereafter, the pseudo-coupling of the substrate 301 and the substrate 302 is concentrically expanded to gradually advance outward. Here, in the substrate bonding apparatus 100, the dummy bonding of the substrate 301 and the substrate 302 is stopped by holding the peripheral portion of the substrate 301 (false bonding stop step). Here, the "false joint state" means a state in which the substrate 301 and the substrate 302 are joined together in a state where the substrate 302 can be separated from the substrate 301. Then, the amount of protrusion of the center portion of the bonding surface of the substrate 301 to the substrate 302 side and the adsorption position (holding position) in the bonding surface of the substrate 301 are set, and the contact area between the bonding surface of the substrate 301 and the bonding surface of the substrate 302 is set. The size is such a size that the bonding surface of the substrate 301 can be detached from the bonding surface of the substrate 302. Further, in the case of the hydrophilization bonding according to the substrate bonding method of the present embodiment, the water molecules between the substrates 301 and 302 in the pre-stage of bonding between the OH groups existing on the bonding surfaces of the substrates 301 and 302 are interposed therebetween. The bonding between the substrate 302 and the substrates 301 and 302 from the substrate 301 in a so-called pseudo-joining state can be repeated several times. Then, in order to transfer the OH groups existing on the bonding surface of the substrates 301 and 302 from the dummy bonding state (the bonding), in the state in which the substrates 301 and 302 are bonded, it is necessary to apply a pressure of a predetermined size or more and heat. The water molecules existing between the substrates 301 and 302 are removed, and the OH groups are brought into a state of being joined.

Next, in the substrate bonding apparatus 100, the position measuring unit 500 measures the amount of positional deviation of the substrate 301 from the substrate 302 (measurement step) (step S11). The processing executed in this step S11 is the same as the processing executed in the above-described step S7.

After that, the substrate bonding apparatus 100 determines whether or not all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or smaller than the predetermined positional deviation amount threshold values Δxth, Δyth, and Δθ th (step S12). Here, the control unit 700 first compares the positional deviation amount threshold values Δxth, Δyth, and Δθth stored in the auxiliary storage unit 703 with the calculated positional deviation amounts Δx, Δy, and Δθ. Then, based on the comparison result, the control unit 700 determines whether or not all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than the respective positional deviation amount threshold values Δxth, Δyth, and Δθ th .

It is assumed that one of the calculated positional deviation amounts Δx, Δy, and Δθ is larger than the preset positional deviation amount threshold values Δxth, Δyth, and Δθ th by the substrate bonding apparatus 100 (step S12: No). ). In this case, the substrate bonding apparatus 100 separates the bonding surface of the substrate 302 from the bonding surface of the substrate 301 (disengagement step) (step S13). At this time, the substrate bonding apparatus 100 moves the first pressing portion 431a in the direction in which the gantry 401 is buried (see the arrow AR51 in FIG. 12B) while raising the gap between the substrates 301 and 302. The second pressing portion 432a is moved in a direction buried in the upper end 402 (see an arrow AR52 in FIG. 12B). Here, the substrate bonding apparatus 100 controls the rise of the upper end 402 to make the substrate 302 have a constant pulling pressure when the substrate 302 is peeled off from the substrate 301. Further, in the substrate bonding apparatus 100, the adsorption of the substrate 301 generated by both of the adsorption portions 440a and 440b on the central portion side of the gantry 401 is restarted (see an arrow AR61 in Fig. 12B). Further, in the substrate bonding apparatus 100, the adsorption of the substrate 302 generated by both of the adsorption portions 440a and 440b on the central portion side of the upper end 402 is restarted (see an arrow AR62 in Fig. 12B). When the substrate bonding apparatus 100 restarts the adsorption of the substrates 301 and 302, the first pressing portion 431a is buried in the gantry 401 and the second pressing portion 432a is buried while the gap between the substrates 301 and 302 is increased. The timing of the timing of entering the upper end 402 is also possible, and it is also possible. At this time, the substrate bonding apparatus 100 blows gas from the peripheral edge of the substrates 301 and 302 to the central portion of the substrates 301 and 302 with a gap between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302 by the blower 811 (refer to Arrow AR6) of Fig. 12B. At this time, the force in the direction in which the substrate 302 is peeled off from the substrate 301 is generated in accordance with the pressure difference between the pressure of the blowing gas of the blower 811 and the pressure applied by the adsorption portions 440a and 440b. As a result, as shown in FIG. 13, the substrate 302 is separated from the substrate 301, and the contact state between the substrate 301 and the substrate 302 is released.

Next, the substrate bonding apparatus 100 is configured to correct the amount of movement of the substrates 301 and 302 whose positional deviation amounts Δx, Δy, and Δθ are equal to or less than the positional deviation amount threshold values Δxth, Δyth, and Δθ th ( Step S14). Here, the control unit 700 calculates a state in which only the positional deviation amounts Δx, Δy, and Δθ between the substrate 301 and the substrate 302 in a state in which the substrate 302 is brought into contact with the substrate 301 and the substrate 302 are not in contact with the substrate 301 are calculated. The amount of correction movement of the amount of movement of the difference in the amount of positional deviation between the substrate 301 and the substrate 302. In this manner, the substrate 301, by re-aligning only the amount of movement of the difference in the amount of positional deviation in the state in which the contact between the substrates 301 and 302 is not in contact with the substrate 301, 302. When the 302 is in contact with each other again, the positional deviation caused by the contact of the same substrates 301 and 302 occurs, and the positional deviation of the substrates 301 and 302 disappears.

After that, in the non-contact state of the two substrates 301 and 302, that is, in a state in which the two substrates 301 and 302 are freely movable in the horizontal direction, the substrate bonding apparatus 100 corrects the relative positional deviation of the two substrates 301 and 302. Δx, Δy, and Δθ are subjected to positional matching (step S15). Here, in the state in which the stage 401 is fixed, the substrate bonding apparatus 100 moves the upper end 402 only in the X direction, the Y direction, and the rotation direction around the Z axis by the correction movement amount calculated in the step S14. In this manner, in the substrate bonding apparatus 100, the relative position of the substrate 302 to the substrate 301 is adjusted in a state where the bonding surface of the substrate 301 and the bonding surface of the substrate 302 are separated, and the positional deviation of the substrates 301 and 302 is made small (position adjustment step) ). Then, the substrate bonding apparatus 100 performs the processing of step S9 again.

On the other hand, it is assumed that all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or smaller than the preset positional deviation amount threshold values Δxth, Δyth, and Δθ th by the substrate bonding apparatus 100 (step S12). :Yes). In this case, the substrate bonding apparatus 100 performs the bonding process (joining step) between the bonding substrates 301 and 302 by pressurizing and heating the two substrates 301 and 302 (step S16). Here, in the substrate bonding apparatus 100, for example, as shown in FIG. 14A, the adsorption portions 440c and 440d of the adsorption substrates 301 and 302 are placed on the central portion side of the gantry 401 and the upper end 402, as shown in FIG. 14A. The adsorption unit 440c is stopped. In other words, the substrate bonding apparatus 100 stops the adsorption (holding) of the substrates 301 and 302 sequentially from the adsorption positions (holding positions) in which the distance from the central portion of the substrates 301 and 302 is short in the peripheral portions of the substrates 301 and 302. The peripheral portion of the substrate 301 is brought into contact with the peripheral portion of the substrate 302. Thereby, the contact portion between the substrates 301 and 302 is extended from the central portion of the substrates 301 and 302 toward the peripheral edge side. Then, as shown in FIG. 14B, the substrate bonding apparatus 100 stops the adsorption portions 440d of the adsorption substrates 301 and 302, and brings the entire bonding surfaces of the substrates 301 and 302 into contact (second contact step). Then, the substrate bonding apparatus 100 heats the substrates 301 and 302 with the heaters 421 and 422 while applying pressure to the substrates 301 and 302 while the entire bonding surfaces of the substrates 301 and 302 are in contact with each other. In other words, the substrate bonding apparatus 100 performs the measurement of the contact between the substrates 301 and 302, the positional deviation amount, and the substrate until the positional deviation amount of the substrates 301 and 302 becomes equal to or less than the positional deviation amount threshold value from step S9 to step S15. 302 is separated from the substrate 301 and the positions of the substrates 301 and 302 are matched. After that, in the substrate bonding apparatus 100, the peripheral portion of the substrate 301 is brought into contact with the peripheral portion of the substrate 302 in a state where the central portion of the bonding surface of the substrate 302 contacts the central portion of the bonding surface of the substrate 301.

As described above, according to the substrate bonding apparatus 100 of the present embodiment, the substrate 301 (302) is bent such that the central portion 301c (302c) of the bonding surface of the substrate 301 (302) is opposed to the substrate 302 by the peripheral portion 301s (302s). (301) side protruding. Then, in this state, the substrate bonding apparatus 100 brings the center portion of the bonding surface of the substrate 301 (302) into contact with the bonding surface of the substrate 302 (301). Here, in the substrate bonding apparatus 100, the dummy bonding of the substrate 301 and the substrate 302 is stopped by holding the peripheral portion of the substrate 301 (302). Then, the substrate bonding apparatus 100 measures the positional deviation of the substrate 301 from the substrate 302, and then the bonding surface of the substrate 302 is separated from the bonding surface of the substrate 301. Thereby, the joining of the substrate 301 and the substrate 302 from the central portion to the peripheral portion is stopped, and the substrate 301 is brought into contact with the central portion of the substrate 302, and the peripheral portions of the substrate 301 and the substrate 302 are separated from each other. Therefore, when the bonding surface of the substrate 301 is separated from the bonding surface of the substrate 302 by the substrate bonding apparatus 100, the bonding surface of the substrate 301 is gradually peeled off from the bonding surface of the substrate 302 from the peripheral portion of the substrate 301 and the substrate 302 toward the center portion. . Therefore, the adhesion of the substrate 302 to the substrate 301 is prevented from becoming peeled off. Further, the curved substrate 301 is such that the central portion 301c of the bonding surface of the substrate 301 protrudes toward the substrate 302 side with respect to the peripheral portion 301s, and the curved portion 302 is bent so that the central portion 302c of the bonding surface of the substrate 302 is closer to the substrate 301 than the peripheral portion 302s. protruding. Thereby, both the substrate 301 and the substrate 302 are bent into the same shape, and the deformation added to the substrate 301 or the substrate 302 is reduced.

However, in a state in which the bonding faces of the substrates 301 and 302 are falsely joined, it is found that a wedge like a blade of the tool is placed between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302, and can be formed from the periphery of the substrates 301 and 302. The ministry began to slowly peel off. However, at this time, since the wedge contacts the bonding surface of the substrates 301 and 302, the bonding surfaces of the substrates 301 and 302 are damaged, which may cause a problem of poor bonding of the substrates 301 and 302. On the other hand, according to the substrate bonding apparatus 100 of the present embodiment, the peripheral edges of the substrates 301 and 302 in the back surface of the substrates 301 and 302 are held and held at a constant position. Thereby, the bonding between the substrates 301 and 302 is not damaged, and the gap between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302 can be ensured, that is, the substrates 301 and 302 can be made. The shape is the same shape as when a wedge like a blade of a cutter is placed between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302.

On the other hand, when the area of the area where the dummy joint is formed between the substrates 301 and 302 is less than the second area of a predetermined size smaller than the first area, the positional deviation due to the false joint between the substrates 301 and 302 does not occur. Alternatively, the substrate 302 vibrates the substrate 301. According to the substrate bonding apparatus 100 of the present embodiment, the substrates 301 and 302 are falsely bonded, and the positional deviation between the substrates 301 and 302 and the substrates 301 and 302 are determined in order to cause the positional deviation of the substrate 301 from the substrate 302. Adsorption position. Further, the distance between the substrates between the substrates 301 and 302 and the adsorption positions of the substrates 301 and 302 are determined to attenuate the vibration of the substrate 301 against the substrate 302. Specifically, the adsorption position of the substrate bonding apparatus 100 is determined, and the area of the area where the substrates 301 and 302 are falsely joined is the second area or the third area or more. Thereby, since the measurement accuracy of the positional deviation amount of the substrates 301 and 302 is improved, the substrates 301 and 302 can be joined with high positional accuracy.

When the area of the area where the substrates 301 and 302 are falsely joined is larger than the first area of a predetermined size, the substrate 302 does not peel off from the substrate 301. According to the substrate bonding apparatus 100 of the present embodiment, the position of the projection of the central portion of the bonding surface of the substrate 301 (302) toward the substrate 302 (301) and the adsorption position of the bonding surface of the substrate 301 (302) are set. The size of the contact area between the bonding surface of the substrate 301 and the bonding surface of the substrate 302 is such that the substrate 302 can be separated from the substrate 301. Specifically, the adsorption position of the substrate bonding apparatus 100 is determined, and the area of the area where the substrates 301 and 302 are falsely joined is equal to or less than the first area. As a result, when the bonding surface of the substrate 301 is separated from the bonding surface of the substrate 302 by the substrate bonding apparatus 100, the deformation added to the substrate 301 or the substrate 302 is reduced, and the damage of the substrate 301 or the substrate 302 is suppressed.

Further, in the substrate bonding apparatus 100 of the present embodiment, when the bonding surface of the substrate 301 is separated from the bonding surface of the substrate 302, the gap between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302 by the blower 811 is obtained from the substrate. The periphery of 301, 302 blows gas in the direction of the central portion of the substrates 301, 302. As a result, when the bonding surface of the substrate 301 is separated from the bonding surface of the substrate 302 by the substrate bonding apparatus 100, the substrate 302 is easily separated from the substrate 301, and the deformation added to the substrate 301 or the substrate 302 is reduced.

Further, according to the substrate bonding apparatus 100 of the present embodiment, the stage 401 holds the substrate 301 at four adsorption positions in which the peripheral portion of the substrate 301 is different from the central portion of the substrate 301, and the substrate 302 is separated from the substrate 302 at the periphery of the substrate 302. The central portion has four different adsorption positions at different distances, so that the upper end 402 holds the substrate 302. Then, the substrate bonding apparatus 100 starts the adsorption position in which the distance between the central portions of the substrates 301 and 302 is short, and stops the adsorption of the substrates 301 and 302 in sequence, thereby causing the substrate 301 (302) to be stopped. The peripheral portion is in contact with the peripheral portion of the substrate 302 (301). Here, the curved substrate 301 (302) sequentially contacts the other substrate (302) 301 from the central portion toward the peripheral edge side of the substrates 301 and 302 in the process of returning to the original flat shape. As a result, the air existing between the two substrates 301 and 302 is pushed out toward the peripheral edge sides of the substrates 301 and 302 while the one substrate 301 (302) is restored into a flat shape. Therefore, when the substrates 301 and 302 are joined to each other, gas is prevented from entering between the substrates 301 and 302. Then, by preventing gas from entering between the two substrates 301 and 302, it is suppressed that a so-called void occurs between the two joined substrates 301 and 302.

(Modification)

Although the respective embodiments of the present invention have been described above, the present invention is not limited to the configurations of the above embodiments. For example, the amount of correction movement can be determined based on a function of the positional deviation of the substrate 302 from the substrate 301 as a parameter. Further, the parameters of the function may include parameters other than the amount of positional deviation of the substrate 302 from the substrate 301. As such a parameter, for example, a parameter indicating an error inherent to the moving mechanism of the gantry 401 and the upper end 402, an error of the position measuring unit 500, and the like are given.

According to the substrate bonding apparatus 100 of the embodiment, when the bonding surface of the substrate 302 is separated from the bonding surface of the substrate 301, the upper end 402 of the substrate 301 is reactivated by the two adsorption portions 440a and 440b of the stage 401. An example of the adsorption of the substrate 302 is restarted by both of the two adsorption portions 440a and 440b. However, the substrate bonding apparatus 100 is not limited to the method of separating the bonding surface of the substrate 302 from the bonding surface of the substrate 301. For example, in the state in which the substrate bonding apparatus 100 stops the adsorption portions 440a and 440b of the gantry 401 and the upper ends 402, 440a and 440b, the upper end 402 is separated from the stage 401, and the bonding surface of the substrate 302 is separated from the bonding surface of the substrate 301. can. In other words, in the substrate bonding apparatus 100, the stage 401 holds the substrate 301 at the holding position in the peripheral portion of the substrate 301, and the upper end 402 holds the substrate 302 at the holding position in the peripheral portion of the substrate 302. Then, in this state, the substrate bonding apparatus 100 moves the upper end 402 in the direction (upward) away from the stage 401, and the bonding surface of the substrate 301 is separated from the bonding surface of the substrate 302. Here, the control unit 700 of the substrate bonding apparatus 100 controls the holding mechanism 440 while the adsorption portions 440c and 440d of the stage 401 adsorb the peripheral portion of the substrate 301, and the adsorption portions 440c and 440d of the upper end 402 adsorb the periphery of the substrate 302. unit. Then, in this state, the control unit 700 moves the upper end 402 upward by controlling the upper end drive unit 404 to separate the joint surface of the substrate 301 from the joint surface of the substrate 302. Further, the substrate bonding apparatus 100 may be configured such that the susceptor surface of the substrate 301 is separated from the bonding surface of the substrate 302 by moving the gantry 401 in a direction (downward) away from the upper end 402.

Alternatively, when the bonding surface of the substrate 302 is separated from the bonding surface of the substrate 301, the substrate bonding apparatus 100 has the adsorption portions 440c and 440d on the peripheral portion of the substrate 301, and the substrate 301 is held by the substrate 301 in comparison with the substrate 301. The adsorption portion having a long distance from the center portion of the substrate 301 on the central portion side may sequentially hold the substrate 301, and the joint surface of the substrate 301 may be separated from the joint surface of the substrate 302. In other words, the substrate bonding apparatus 100 may be configured such that the adsorption unit 440b of the stage 401 adsorbs and holds the substrate 301, and then the adsorption unit 440a of the stage 401 adsorbs and holds the substrate 301. Further, in the substrate bonding apparatus 100, the adsorption unit 440b of the upper end 402 may adsorb and hold the substrate 301, and then the adsorption unit 440a of the upper end 402 may adsorb and hold the substrate 301.

For example, as shown in FIG. 12A, the substrate bonding apparatus 100 restarts the adsorption portion 440b and the upper end 402 of the stage 401 as shown in FIG. 15A in accordance with the state in which the substrates 301 and 302 are held by the peripheral portions of the substrates 301 and 302. Adsorption of the substrates 301 and 302 by the adsorption unit 440b (see arrows AR611 and AR621 in Fig. 15A). In the 15A and 15B drawings, the same components as those in the embodiment are denoted by the same reference numerals as in the 12B. At this time, the substrate bonding apparatus 100 maintains the adsorption portion 440a of the gantry 401 and the adsorption portion 440a of the upper end 402 in the stopped state. Next, as shown in Fig. 15B, the substrate bonding apparatus 100 re-adsorbs the substrate 301 and 302 generated by the attaching portion 440a of the gantry 401 and the adsorption portion 440a of the upper end 402 (see arrows AR612 and AR622 in Fig. 15B). Then, as shown in Fig. 13, the substrate 302 is separated from the substrate 301, and the contact state between the substrate 301 and the substrate 302 is released.

Further, in the substrate bonding apparatus 100, the upper end 402 is moved upward from the stage 401, and the bonding surface of the substrate 301 is brought about by the adsorption of the substrate 301 by the adsorption portions 440b and 440a of the re-starting stage 401 and the upper end 402. The configuration of the joint surface of the substrate 302 may be removed. In other words, in the substrate bonding apparatus 100, when the bonding surface of the substrate 302 is separated from the bonding surface of the substrate 301, the upper end 402 is placed upward with the stage 401 and the upper end 402 holding the substrates 301 and 302 on the peripheral portions of the substrates 301 and 302. While the gantry 401 is away from the gantry 401, the substrates 301 and 302 may be sequentially held in comparison with the adsorption portions having a long distance from the central portion of the substrates 301 and 302 on the central portion side of the peripheral portions of the substrates 301 and 302.

However, in the embodiment, the substrates 301 and 302 generated by the adsorption portions 440a and 440b of the gantry 401 and the upper end 402 are simultaneously activated while the interval between the gantry 401 and the upper end 402 is constant. That is, by restarting the substrate 301 by the gantry 401, the upper end 402 restarts the substrate 302 to be completely adsorbed, and the substrate 302 is peeled off from the substrate 301. In this case, in the joint interface of the stage 401, the upper end 402, or the substrates 301, 302, sometimes a force of several hundred N (Newtons) acts. In this case, there is a risk of damage to the gantry 401, the upper end 402, or the joint surface damage of the substrates 301, 302.

On the other hand, in the state in which the substrates 301 and 302 are falsely joined, when the substrate 302 is peeled off from the substrate 301, the center portions of the substrates 301 and 302 are sequentially peeled off toward the center portion. Thereby, the force applied to the upper side of the stage 401 is lowered as compared with the case where the adsorption of the substrate 301 by the adsorption portions 440a and 440b of the stage 401 is simultaneously restarted. Further, the force applied to the lower end 402 is lowered as compared with the case where the adsorption of the substrate 302 by the adsorption portions 440a and 440b of the upper end 402 is simultaneously restarted. As a result, when the joint surface of the substrate 301 is separated from the joint surface of the substrate 302, the positional deviation of the gantry 401 caused by the upward movement of the gantry 401 and the positional deviation of the upper end 402 caused by the downward movement of the upper end 402 are suppressed. In addition, when the center portion of the substrate 301 is adsorbed by the stage 401 and the center portion of the substrate 302 is adsorbed by the upper end 402, the impact is added to the substrate 302. Therefore, when the bonding surface of the substrate 301 is separated from the bonding surface of the substrate 302, damage of the bonding surface of the substrates 301 and 302 is suppressed. Thereby, the bonding surfaces of the substrates 301 and 302 are brought into contact with each other again. When the substrates 301 and 302 are bonded to each other, damage to the bonding surfaces of the substrates 301 and 302 can be suppressed, and the substrates 301 and 302 are not bonded to each other.

In the embodiment, in the process of steps S9 and S10 of the above-described ninth embodiment, as shown in FIG. 12A, the gantry 401 is caused to adsorb the peripheral portion 301s of the substrate 301, and The first pressing portion 431a presses the center portion of the substrate 301 to bend the substrate 301. In the process of steps S9 and S10, in the process of steps S9 and S10, the substrate 302 is bent by pressing the central portion of the substrate 302 with only the second pressing portion 432a while the upper end 402 is adsorbing the peripheral portion 302s of the substrate 302. . However, in the process of steps S9 and S10, the substrate bonding apparatus is not limited to bending the substrates 301 and 302 by only the first pressing portion 431a and the second pressing portion 432a. For example, as shown in FIG. 16A, the substrate bonding apparatus adsorbs the substrate 301 by the two adsorption portions 440c and 440d on the peripheral side of the gantry 401, and the two adsorption portions from the central portion side of the gantry 401 (first The gas discharge portions 440a and 440b may discharge air to the gap S71 between the stage 401 and the substrate 301 (see an arrow AR711 in Fig. 16A). Thereby, the substrate 301 is bent, and the central portion 301c of the joint surface of the substrate 302 protrudes toward the substrate 302 side from the peripheral portion 301s. Further, in the substrate bonding apparatus, the two adsorption portions 440c and 440d on the peripheral side of the upper end 402 adsorb the substrate 302, and the two adsorption portions 440a and 440b on the central portion side of the upper end 402 are opposed to the upper end 402 and the substrate 302. It is also possible to discharge air in the gap S72. Thereby, the substrate 302 is bent, and the central portion 302c of the bonding surface with the substrate 301 protrudes toward the substrate 301 side from the peripheral portion 302s. At this time, as shown in FIG. 16A, the central portion 301c of the substrate 301 is in contact with the central portion 302c of the substrate 302.

Next, as shown in FIG. 16B, the first bonding portion 431a protrudes upward (see an arrow AR751 in FIG. 16B), and the front end portion of the first pressing portion 431a contacts the center portion of the substrate 301. In the substrate bonding apparatus, the second pressing portion 432a protrudes downward (see an arrow AR752 in FIG. 16B), and the distal end portion of the second pressing portion 432a contacts the central portion of the substrate 302. After that, the substrate bonding apparatus stops the discharge of air from the two adsorption portions 440a and 440b of the gantry 401, and stops the discharge of air from the two adsorption portions 440a and 440b of the gantry 402. In addition, the front end portion of the first pressing portion 431a contacts the center portion of the substrate 301, and the front end portion of the second pressing portion 432a contacts the center portion of the substrate 302, and can continue from the gantry 401 and the upper end. The adsorption portions 440a and 440b of the respective 402 discharge air.

According to this configuration, when the substrates 301 and 302 are bent, the stress applied to the substrates 301 and 302 is lowered, and the joint surfaces of the substrates 301 and 302 are prevented from being damaged.

In the embodiment, the front end portion of the first pressing portion 431a is brought into contact with the center portion of the substrate 301, and the front end portion of the second pressing portion 432a is brought into contact with the center portion of the substrate 302. However, the substrate bonding apparatus is not necessarily limited to the configuration in which the gantry 401 and the upper end 402 having the first pressing portion 431a and the second pressing portion 432a are provided. For example, as shown in Fig. 17, the substrate bonding apparatus may be provided with a gantry 2401 and an upper end 2402 having only the adsorption portions 440a, 440b, 440c, and 440d. In this case, the substrate bonding apparatus adsorbs the substrate 301 by the two adsorption portions 440c and 440d on the peripheral side of the gantry 2401, and the two adsorption portions 440a and 440b on the central portion side of the gantry 2401 are opposed to each other. A gap S71 between the frame 2401 and the substrate 301 discharges air to bend the substrate 301. Further, in the substrate bonding apparatus, the two adsorption portions 440c and 440d on the peripheral side of the upper end 2402 adsorb the substrate 302, and the upper end 2402 and the substrate 302 are separated from the two adsorption portions 440a and 440b on the central portion side of the upper end 2402. The gap S72 is between the air and the substrate 302 is bent.

According to this configuration, there is an advantage that the configuration of the gantry 2401 and the upper end 2402 is simplified.

Further, in the embodiment, the case where the holding mechanism 440 is constituted by a vacuum chuck will be described. However, the present invention is not limited thereto. For example, the holding mechanism may be constituted by a mechanical chuck or an electrostatic chuck. Alternatively, the holding mechanism may be configured by combining at least two kinds of chucks of the vacuum chuck, the mechanical chuck, and the electrostatic chuck. Further, in the embodiment, an example in which the holding mechanism 440 is configured by the annular suction portions 440a, 440b, 440c, and 440d will be described. However, the structure of the adsorption portion is not limited thereto, and is, for example, via the upper surface of the gantry 401 and the lower surface of the upper end 402. The structure in which the plurality of holes are open to adsorb the substrate 301 and the substrate 302 may be used. Further, the holding mechanism 440 may have a configuration in which an electrostatic chuck that operates independently of each other is provided in a plurality of (for example, four) annular regions different in center distance from the gantry 401 or the upper end 402.

In the embodiment, the holding mechanism 440 is an example in which the four annular adsorption portions 440a, 440b, 440c, and 440d are configured. However, the number of the adsorption portions is not limited to four, and the holding mechanism is constituted by a plurality of adsorption portions. can. For example, the holding mechanism may be configured by three or less adsorption units, and may be composed of five or more adsorption units.

In the embodiment, in the above-described detachment step (refer to step S13 of FIG. 9), the substrate bonding apparatus 100 that blows gas to the gap between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302 by the blower 811 will be described. However, the substrate bonding apparatus is not limited to the configuration in which the blower 811 is provided. In the substrate bonding apparatus, the blower 811 is not provided, and in the detaching step (step S13), the gas may not be blown to the gap between the peripheral portion of the substrate 301 and the peripheral portion of the substrate 302.

In the embodiment, in the step of holding the substrates 301 and 302 (step S4 in FIG. 9), the substrate bonding apparatus 100 sequentially holds the substrate 301 and the upper end 402 from the central portion of the substrates 301 and 302 to the periphery. 302 is also ok. In other words, the substrate bonding apparatus 100 starts from the holding position at a short distance from the center of the substrates 301 and 302, and sequentially holds the substrates 301 and 302 at a distance from the central portion of the substrates 301 and 302. The position may be maintained such that the stage 401 and the upper end 402 hold the substrates 301 and 302. Here, the substrate bonding apparatus 100 controls the adsorption sections 440a, 440b, and 440c in order to sequentially hold the substrates 301 and 302 in the adsorption section where the distance between the gantry 401 and the upper end 402 is shorter than the central portion of the region where the substrates 301 and 302 are placed. 440d action. For example, as shown in FIG. 18A, it is assumed that the substrate 301 is convexly curved toward the substrate 302 side, and the substrate 302 is convexly curved toward the substrate 301 side. Then, in the substrate bonding apparatus 100, first, the center portions 301c and 302c of the substrates 301 and 302 are sucked and held by the ejector 401 and the adsorption portion 440a of the upper end 402 (see arrows AR811 and AR821 in Fig. 18A). After that, the substrate bonding apparatus 100 sucks and holds the substrates 301 and 302 by the ejector 401 and the adsorption unit 440b of the upper end 402, and as shown in FIG. 18B, the holding units 301 and 302 are sucked and held by the adsorption unit 440c (refer to the arrow of FIG. 18B). AR811, AR812, AR813, AR821, AR822, AR823). Finally, in the substrate bonding apparatus 100, by holding and holding the substrates 301 and 302 by the adsorption unit 440d, the stage 401 and the upper end 402 are held by the substrates 301 and 302 as shown in FIG. 11A.

According to this configuration, even when the substrates 301 and 302 are bent, the stages 401 and 402 can be held without deforming the substrates 401 and 302. For example, in the case of holding from the outer periphery, only the portion where the central portion is curved may be deformed.

Further, the holding mechanism is a combination of a vacuum chuck and an electrostatic chuck, that is, a holding mechanism having a plurality of adsorption portions having different distances from a central portion of a region where the substrates 301 and 302 are placed, in the gantry and the upper end. And a plurality of electrostatic chucks. In this case, in the step of holding the substrates 301 and 302 (step S4 in FIG. 9), the substrate bonding apparatus firstly adsorbs the substrates 301 and 302 in contact with the gantry and the holding surface of the upper end by a vacuum chuck. Thereafter, the substrates 301 and 302 may be held by an electrostatic chuck. In the control unit of the substrate bonding apparatus, the substrate 401 and the upper end 402 are sequentially sucked and held by the adsorption unit having a short distance from the central portion of the region where the substrates 301 and 302 are placed, and then the plurality of substrates 301 and 302 are sequentially sucked and held. The electrostatic chuck holds the substrates 301 and 302 and controls the operation of a plurality of adsorption sections and a plurality of electrostatic chucks. For example, as shown in FIG. 19A, the substrate bonding apparatus may be provided with a gantry 3401 and an upper end 3402 having four annular adsorption portions 440a, 440b, 440c, and 440d and an electrostatic chuck 3440. In the substrate bonding apparatus, first, the holding surfaces 3401a and 3402a of the stage 3401 and the upper end 3402 are attracted to the substrates 301 and 302 via the adsorption units 440a and 440b (see arrows AR811, AR812, AR813, AR814, AR821, and AR822 in Fig. 19A). AR823, AR824). Here, in the substrate bonding apparatus, the substrates 301 and 302 are sequentially held and held by the gantry 3401 and the upper end 3402 from the central portion of the substrates 301 and 302 to the periphery. Further, in the substrate bonding apparatus, no voltage is applied to the electrostatic chuck 3440. Then, as shown in FIG. 19B, when the substrates 301 and 302 are in contact with the holding faces 3401a and 3402a of the upper end 3402, the voltage is applied to the electrostatic chucks 3440, and the adsorption portion 440a is stopped. The adsorption of the substrates 301, 302 generated by the 440b, 440c, and 440d. In this manner, the substrates 301 and 302 are held by the stage 3401 and the upper end 3402 by the electrostatic chuck 3440.

In the embodiment, the substrate bonding apparatus 100 bends the substrates 301 and 302 described above (see step S9 in FIG. 9), and describes the substrate 301 on which the ejector 401 and the adsorption portions 440a and 440b of the upper end 402 are generated. An example of the stop of adsorption of 302. However, the substrate bonding apparatus 100 is not limited to the configuration in which the atmosphere is open to the piping system (not shown) of the adsorption units 440a and 440b, or the adsorption units 440a and 440b are slightly discharged. can. According to this configuration, in the step of bending the substrates 301 and 302, since the substrates 301 and 302 are easily bent, the substrates 301 and 302 can be naturally peeled off from the stage 401 and the upper end 402 without being deformed.

In the embodiment, in the bonding step (step S16 in FIG. 9), the substrate bonding apparatus 100 will be described as an example in which the adsorption portions 440c and 440d of the stage 401 and the upper end 402 are stopped in accordance with the state shown in FIG. 12A. However, the substrate bonding apparatus may be configured to have a piping system (not shown) in which the atmosphere is open to the adsorption units 440c and 440d in the joining step, or the adsorption units 440c and 440d may slightly discharge the gas. The composition can also be. According to this configuration, in the bonding step, since the substrates 301 and 302 are easily peeled off from the stage 401 and the upper end 402, the substrates 301 and 302 can be bonded well.

In the embodiment, the substrate bonding apparatus 100 may perform the substrate bending amount measuring step of measuring the amount of bending of the substrates 301 and 302 held by the gantry 401 and the upper end 402 immediately before the position matching step (see step S8 of FIG. 9). . For example, as shown in FIG. 20A, the central portion of the substrates 301 and 302 held by the gantry 401 and the upper end 402 may be curved. In this case, the distance between the central portions of the substrates 301 and 302 is shorter than the distance G2 obtained by subtracting the thickness of the gantry 401 and the upper end 402 from the distance G1 between the gantry 401 and the upper end 402. For example, it is curved in a shape in which the center portions of the substrates 301 and 302 protrude. In this case, as in the embodiment, in order to make the distance G2 a desired distance, when the upper end 402 approaches the gantry 401, the distance between the center portion of the gantry 401 and the upper end 402 becomes shorter than the desired distance. Therefore, for example, when the total amount of bending of the central portion of the substrates 301 and 302 is 10 μm or more, in order to make the distance G2 10 μm and the gantry 401 and the upper end 402 approach each other, the substrates 301 and 302 are in contact with each other, and the positional matching step cannot be performed. .

On the other hand, the substrate bonding apparatus according to the present modification includes at least a displacement sensor (not shown) that detects the position of the second pressing portion 432a. Then, in the substrate bonding apparatus of the present modification, in the bending amount measuring step immediately before the position matching step, the second pressing portion 432a is detected by the displacement sensor to contact the flat substrate without bending with a slight pressure (No The position of the second pressing portion 432a in the state in which the second pressing portion 432a contacts the substrate 302 with a very small pressure as shown in FIG. 20B is the position of the second pressing portion 432a. In other words, the position of the second pressing portion 432a in a state in which the second pressing portion 432a is in contact with the reference substrate without the pressure of the reference substrate is pressed, and the pressure of the second pressing portion 432a in the size of the substrate 302 is not bent. The position of the second pressing portion 432a in a state in which the substrate 302 is in contact with the substrate 302. Then, the substrate bonding apparatus calculates the amount of warpage p0 of the substrate 302 from the upper end 402 based on the difference between the two positions detected by the displacement sensor. Then, the substrate bonding apparatus brings the distance obtained by subtracting the distance correction amount corresponding to the product of the bending amount p0 of the substrate 302 and the product of the preset magnification to a desired distance, and the upper end 402 approaches the stage 401. The distance correction amount may be, for example, only twice the amount of bending p0. Alternatively, when the bending of the self-weight of the substrate 302 held by the upper end 402 is large, the amount of bending of the substrate 301 held by the stage 401 is 0.8 times the bending amount p0 of the substrate 302, and the distance correction amount is 1.8 times the bending amount p0. can.

When the bending amount measurement step is completed, the first pressing portion 431a of the gantry 401 is caused to protrude only by the amount of protrusion of the distance correction amount, and then the process proceeds to the positional matching step. Therefore, the gantry 401 does not have a configuration of a position measuring function of the first pressing portion 431a, and for example, it can be configured as a simple piezoelectric actuator.

According to this configuration, the contact between the substrates 301 and 302 can be suppressed immediately before the step of meeting the positions.

Further, in the embodiment, an example in which the distance measuring unit 801 measures the distance between the three positions on the upper surface of the gantry 401 and the three lower portions of the upper end 402 will be described. However, the number of measurement places of the distance measuring unit 801 is not limited to three, and may be two or less, for example, four or more. Further, in each of the embodiments, a configuration is described in which the distance between the upper surface of the measurement gantry 401 and the lower surface of the upper end 402 and the thickness of the substrates 301 and 302 are calculated, and the distance between the substrates 301 and 302 is calculated. However, the present invention is not limited thereto. For example, the substrate bonding apparatus may be configured to directly measure the distance between the substrates 301 and 302 while the substrate 301 is held by the stage 401 and held by the upper end 402 of the substrate 302.

In the embodiment, the position measuring unit 500 has two first imaging units 501 and a second imaging unit 502. However, the configuration of the position measuring unit 500 is not limited thereto. For example, the position measuring unit has only one. The photographing unit may move the photographing unit in the X direction or the Y direction, and may sequentially capture the photographed images GAa and GAb.

In the embodiment, the substrate bonding apparatus 100 is described as an example in which the substrates 301 and 302 are heated while the bonding surfaces of the substrates 301 and 302 are in contact with each other, and the substrates 301 and 302 are heated by the heaters 421 and 422. . However, the substrate bonding apparatus 100 may be configured to apply pressure only to the substrates 301 and 302 without heating when the entire bonding surfaces of the substrates 301 and 302 are in contact with each other. Alternatively, in the state in which the entire bonding surfaces of the substrates 301 and 302 are in contact with each other, the substrate bonding apparatus 100 may be configured to perform heating only of the substrates 301 and 302 without applying pressure.

In the embodiment, an example in which the substrates 301 and 302 are pressurized and heated in the substrate bonding apparatus 100 will be described, but the configuration is not limited thereto. In a device different from the substrate bonding apparatus 100, a configuration of pressurization processing and/or heat treatment of the substrates 301 and 302 may be performed. For example, the substrate bonding apparatus 100 may be configured such that the dummy bonding is performed until the substrates 301 and 302 are performed, and then the heating processing is performed in another heating device (not shown). In this case, the heat treatment was set to a condition of about 180 ° C for about 2 hours. Thereby, the production efficiency can be improved.

Further, in the embodiment, an example in which the hydrophilization bonding is used as the bonding method between the substrates 301 and 302 will be described, but the bonding method employed is not limited thereto, and other methods may be employed. For example, a surface activation direct bonding method is also possible. Alternatively, a bonding method in which a metal or a solder-based material is interposed between the substrates may be employed.

Further, in the embodiment, the configuration in which the substrates 301 and 302 are joined in a vacuum is described. However, the configuration is not limited thereto, and the substrates 301 and 302 may be joined under atmospheric pressure or may be filled with air under an arbitrary gas. The configuration of the joint is also possible.

In the embodiment, the configuration in which the upper end 402 of the gantry 401 is moved is described. However, the configuration is not limited thereto. For example, the configuration may be such that the upper end 402 moves the gantry 401.

Further, in the embodiment, the configuration in which the piezoelectric actuator 411 and the second pressure sensor 412 are at the same position in the horizontal plane will be described. However, the present invention is not limited thereto, and the position of the piezoelectric actuator 411 in the horizontal plane and the second pressure sensor are not limited thereto. The location of 412 is also different.

In the embodiment, the first imaging unit 501 and the second imaging unit 502 are described as being emitted from the first imaging unit 501 and the second imaging unit 502, and the infrared light reflected by the alignment marks MK1a and MK2a of the substrates 301 and 302 is reflected by the first imaging unit 501 and the second imaging unit 502. The configuration of measuring the positional deviation of the substrates 301 and 302 is detected. However, the infrared light emitted from one of the thickness directions of the substrates 301 and 302 to the alignment marks MK1a and MK2a of the substrates 301 and 302 is detected in the other of the thickness directions of the substrates 301 and 302. The composition is also ok. Alternatively, the configuration may be such that the positional deviation amounts of the substrates 301 and 302 are measured by directly reading the alignment marks MK1a and MK2a of the substrates 301 and 302 by using visible light.

In the embodiment, after the cleaning of the substrates 301 and 302 is performed in the cleaning device 940, the bonding surface treatment device 600 performs the activation treatment and the hydrophilization treatment on the bonding surfaces of the substrates 301 and 302. An example of joining of the substrates 301, 302 is performed in the bonding apparatus 100. However, the order of washing, activation treatment, hydrophilization treatment, and bonding of the substrates 301 and 302 is not limited thereto. For example, after the activation treatment and the hydrophilization treatment of the joint surfaces of the substrates 301 and 302 are performed, the substrates 301 and 302 are washed, and then the substrates 301 and 302 may be joined.

In the embodiment, the example of the hydrophilization treatment of the water gas supplied to the substrates 301 and 302 in the joint surface treatment apparatus 600 is described. However, the place where the hydrophilization treatment of the supplied water gas is performed is not limited to the joint surface treatment apparatus 600. For example, a configuration in which the hydrophilization treatment of the substrates 301 and 302 is performed in the load lock chamber 910 may be employed.

The embodiment and the modifications of the present invention (including the description of the text. The same applies hereinafter) are described above, but the present invention is not limited thereto. The present invention includes appropriate combinations of the embodiments and modifications, and includes appropriate modifications.

The present application is based on Japanese Patent Application No. 2016-193116, filed on Sep. 30, 2016. The specification, the scope of the patent application, and the drawings of Japanese Patent Application No. 2016-193116, the entire disclosure of which is incorporated herein by reference.

The present invention is suitable, for example, for the manufacture of CMOS image sensors or memories, arithmetic elements, and MEMS.

Claims (28)

 A substrate bonding method for bonding a substrate between a first substrate and a second substrate, comprising: a first contact step of forming a center portion of the bonding surface of the first substrate and the second substrate toward the second substrate In a state where the first substrate is bent, the center portion of the bonding surface of the first substrate is brought into contact with the bonding surface of the second substrate and the first substrate, and the dummy bonding is stopped to hold the first substrate. The peripheral portion stops the false engagement of the first substrate and the second substrate; the measuring step measures the amount of positional deviation of the first substrate from the second substrate; and the removing step causes the bonding surface of the first substrate to be separated from the above a bonding surface of the second substrate; and a position adjustment step of adjusting a relative position of the first substrate to the second substrate in a state where a bonding surface between the bonding surface of the first substrate and the bonding surface of the second substrate is spaced apart And the second contact step, the first contact step, the measuring step, and the performing are performed until the positional deviation amount is equal to or less than a predetermined positional deviation amount threshold value After the detachment step and the position adjustment step, the peripheral portion of the first substrate is brought into contact with the peripheral portion of the first substrate while the center portion of the bonding surface of the first substrate is in contact with the bonding surface of the second substrate. The peripheral portion of the second substrate.    The substrate bonding method according to claim 1, wherein in the first contact step, a central portion of a bonding surface of the second substrate and the first substrate protrudes from the peripheral portion toward the first substrate side. In a state in which the second substrate is bent, a central portion of the joint surface of the second substrate is brought into contact with a joint surface of the first substrate and the second substrate.    The substrate bonding method according to the first or second aspect of the invention, wherein the first contact step is caused by the dummy bonding of the first substrate and the second substrate, in order to generate the first substrate and the second substrate The positional deviation is determined, and the distance between the substrate between the first substrate and the second substrate and the holding position of the first substrate are determined.    The substrate bonding method according to the first or second aspect of the invention, wherein, in the first contacting step, a distance between the substrate between the first substrate and the second substrate and a holding position of the first substrate are determined. The vibration of the first substrate to the second substrate is attenuated.    The substrate bonding method according to the first or second aspect of the invention, wherein, in the first contacting step, a distance between the substrate between the first substrate and the second substrate and a holding position of the first substrate are determined. The size of the contact area between the bonding surface of the first substrate and the bonding surface of the second substrate is such that the bonding surface of the first substrate can be separated from the bonding surface of the second substrate in the separating step.    The substrate bonding method according to the first aspect of the invention, wherein the gap between the peripheral portion of the first substrate and the peripheral portion of the second substrate is from the first substrate and the first The periphery of the substrate is blown with gas toward the circumferential portion of the first substrate and the central portion of the second substrate.    The substrate bonding method according to claim 3, wherein in the first contact step, a plurality of holding positions different in distance from a central portion of the first substrate in a peripheral portion of the first substrate are supported The first substrate is held by the first substrate; and in the second contact step, the holding of the first substrate is sequentially released from the holding position in which the distance from the central portion of the first substrate is shorter in the peripheral portion of the first substrate. The peripheral portion of the first substrate contacts the peripheral portion of the second substrate.    The substrate bonding method according to claim 7, wherein in the first contact step, in a state in which the first support is held by the first support in the holding position of the peripheral portion of the first substrate The gas is discharged from the gap between the first support base and the first substrate, and the center portion of the joint surface between the first substrate and the second substrate protrudes toward the second substrate side from the peripheral portion, and the first substrate is formed. bending.    The substrate bonding method according to claim 7, wherein in the removing step, the first support is held by the first support while maintaining the first substrate in the holding position of the peripheral portion of the first substrate (2) a holding position in a peripheral portion of the substrate, wherein the second support is held in the second substrate, and at least one of the first support and the second support is moved away from the other. The bonding surface of the first substrate is separated from the bonding surface of the second substrate.    The substrate bonding method according to claim 7, wherein in the removing step, the holding position in the peripheral portion of the first substrate is compared with the first state in the state in which the first substrate is held by the support table. The peripheral portion of the substrate is located on the center portion side, and the first substrate is sequentially held from a holding position that is long from the center portion of the first substrate, and the joint surface of the first substrate is separated from the joint surface of the second substrate.    The substrate bonding method according to claim 7, wherein in the removing step, the holding position in the peripheral portion of the first substrate is maintained by the support table in a state in which the first substrate is held. a peripheral portion of the substrate is located on the central portion side, and the first substrate is sequentially held from a holding position that is long from a central portion of the first substrate, and the first support table and the second support table are simultaneously At least one of them moves in a direction away from the other, and the joint surface of the first substrate is separated from the joint surface of the second substrate.    The substrate bonding method according to claim 1, further comprising: a hydrophilization treatment step of adhering water or a joint surface of the first substrate and the second substrate before the first contact step Hydrophilization treatment containing OH species.    The substrate bonding method according to claim 1, further comprising a bonding step of re-bonding at least one of heating and pressing of the first substrate and the second substrate after the second contacting step.    A substrate bonding method for bonding a substrate between a first substrate and a second substrate, comprising: a first contact step of maintaining a plurality of different distances from a central portion of the first substrate in a peripheral portion of the first substrate Positioning the first substrate, the center portion of the joint surface of the first substrate and the second substrate protrudes from the second substrate side to bend the first substrate, and the first substrate is bent a central portion of the bonding surface of the substrate is in contact with the bonding surface of the second substrate and the first substrate, and a second contact step, wherein a central portion of the bonding surface of the first substrate is in contact with a bonding surface of the second substrate, The peripheral portion of the first substrate is brought into contact with the peripheral portion of the first substrate, and the peripheral portion of the first substrate is brought into contact with the peripheral portion of the second substrate by sequentially releasing the holding of the first substrate. .    A substrate bonding method for bonding a substrate between a first substrate and a second substrate, comprising: a first contact step of maintaining a plurality of different distances from a central portion of the first substrate in a peripheral portion of the first substrate Positioning the first substrate, the center portion of the joint surface of the first substrate and the second substrate protrudes from the second substrate side to bend the first substrate, and the first substrate is bent a central portion of the bonding surface of the substrate is in contact with the bonding surface of the second substrate and the first substrate; and in the removing step, the holding position of the peripheral portion of the first substrate is maintained by the support table. The peripheral portion of the substrate is located on the center portion side, and the first substrate is sequentially held from the holding position that is long from the center portion of the first substrate, and the bonding surface of the first substrate is separated from the bonding of the second substrate. And the second contact step, after the detaching step, the first contact step is performed, and the central portion of the bonding surface of the first substrate is in contact with the bonding surface of the second substrate, Said peripheral portion of the first substrate contact with the peripheral portion of the second substrate.    A substrate bonding method for bonding a substrate between a first substrate and a second substrate, comprising: a holding step of sequentially holding the support table from a holding position having a short distance from a central portion of the first substrate The substrate holds the first substrate at a plurality of holding positions at different distances from the central portion of the first substrate.    A substrate bonding apparatus that is a substrate bonding apparatus that bonds a first substrate and a second substrate, includes a first support, has a first holding portion, and is supported while holding a peripheral portion of the first substrate; and a second support table And having the second holding portion and facing the first support table, supporting the second support substrate while holding the second support on the first support base side; and pressing the press portion toward the second substrate side a central portion of the first substrate, a central portion of the bonding surface of the first substrate protrudes toward the second substrate, and the first substrate is bent; and a support stage driving unit that causes the first support and the second support At least one of the first support station and the second support table are in a first direction, or the first support table and the second support table are moved away from each other in a second direction; and the measuring unit is supported by the support station The driving unit moves at least one of the first support base and the second support table in the first direction, and the first portion of the joint surface of the first substrate is in contact with the joint surface of the second substrate, and the first Direction and the above 2nd Measuring the amount of positional deviation of the first substrate from the second substrate in the direction of the orthogonal direction; and adjusting the relative position of the first substrate to the first direction and the second direction orthogonal to the second substrate a position that reduces the amount of positional deviation; and a control unit that controls the individual operations of the first holding unit, the second holding unit, the pressing unit, the support unit drive unit, the measurement unit, and the position adjustment unit; The first support base stops the false engagement of the first substrate and the second substrate by holding the peripheral portion of the first substrate.    The substrate bonding apparatus according to claim 17, wherein the measuring unit is a measurement position determined by a position of the first support stage and the second support stage in a peripheral portion of the first substrate. The above positional deviation amount is measured.    The substrate bonding apparatus according to claim 17 or 18, wherein the first holding portion is configured by a plurality of secondary holding portions provided in a region where the first substrate is placed on the first support table; The control unit controls the operation of the plurality of secondary holding portions, and connects the bonding surface of the first substrate and the second substrate in a state where the central portion of the bonding surface of the first substrate is in contact with the bonding surface of the second substrate. The size of the contact region is such that the bonding surface of the first substrate can be separated from the bonding surface of the second substrate.    The substrate bonding apparatus according to claim 19, wherein the plurality of secondary holding portions are arranged in a ring shape having different diameters, and are arranged in a concentric shape; and the control portion is a joint surface of the first substrate When the center portion is protruded toward the second substrate side, the first substrate is bent, and the first substrate is held by the secondary holding portion facing the peripheral portion of the first substrate in the plurality of secondary holding portions, so that the first substrate is aligned The operation of the secondary holding portion at the central portion of the substrate is stopped.    The substrate bonding apparatus according to claim 20, wherein the control unit is in a state in which a central portion of a bonding surface of the first substrate is in contact with a bonding surface of the second substrate, and a peripheral portion of the first substrate The secondary holding portion that holds the holding position at a short distance from the central portion of the first substrate is stopped by sequentially stopping the holding of the first substrate, and the peripheral portion of the first substrate is brought into contact with the peripheral portion of the second substrate. .    The substrate bonding apparatus according to claim 20, wherein the first holding portion has a first gas discharge portion, and the first support table and the first support are held while holding the peripheral portion of the first substrate The control unit is configured to discharge the gas in a gap between the first substrates, and the first holding unit holds the peripheral portion of the first substrate while the first holding portion is held, and the first gas discharge unit discharges the gas. The center portion of the joint surface of the first substrate and the second substrate protrudes toward the second substrate side from the peripheral portion, and the first substrate is bent.    The substrate bonding apparatus according to claim 20, wherein the control unit holds the peripheral portion of the first substrate while the first holding portion holds the peripheral portion of the second substrate In the state of the first holding unit, the second holding unit, and the support stage driving unit, at least one of the first support stage and the second support stage is moved in the second direction to cause the first The bonding surface of the substrate is separated from the bonding surface of the second substrate.    The substrate bonding apparatus according to claim 20, wherein the control unit controls the first holding unit based on a state in which the first substrate is held by the secondary holding portion of the peripheral portion of the first substrate. The peripheral portion of the first substrate is provided with the first substrate and the bonding surface of the first substrate by sequentially holding the first substrate from the secondary holding portion facing the holding position at a distance from the central portion of the first substrate at the center portion side. The surface of the second substrate is separated from the joint surface.    The substrate bonding apparatus according to claim 20, wherein the control unit holds the first substrate in a state in which the second holding portion of the peripheral portion of the first substrate is held, in order to compare the first substrate with the first substrate. The peripheral portion holds the first substrate sequentially from the secondary holding portion facing the holding position that is longer than the central portion of the first substrate, and controls the first holding portion while controlling the first portion. The holding portion, the second holding portion, and the support table driving portion move at least one of the first support table and the second support table in the second direction, and the joint surface of the first substrate is separated from the second substrate Joint surface.    The substrate bonding apparatus according to claim 17, further comprising: a second gas discharge unit that moves at least one of the first support stage and the second support stage in the first direction by the support stage drive unit In a state in which a central portion of a joint surface of the first substrate is in contact with a joint surface of the second substrate, a direction orthogonal to a direction in which the first substrate and the second substrate overlap each other is formed on a peripheral portion of the first substrate. a gap between the peripheral portion of the first substrate and the peripheral portion of the second substrate is disposed from a periphery of the first substrate and the second substrate toward the first portion of the second substrate. a gas is blown in a direction of a central portion of the substrate and the second substrate, and the control unit further controls an operation of the second gas discharge unit, and when the joint surface of the first substrate is separated from the joint surface of the second substrate, The second gas discharge unit blows a gas to a gap between a peripheral portion of the first substrate and a peripheral portion of the second substrate.    A substrate bonding apparatus that is a substrate bonding apparatus that bonds a first substrate and a second substrate, and includes a first support table having a plurality of times different from a central portion of the region in a region in which the first substrate is placed The holding unit and the control unit control the operation of the plurality of secondary holding units in order to sequentially hold the first substrate from the secondary holding unit having a short distance from the central portion of the region.    The substrate bonding apparatus according to claim 27, wherein the plurality of secondary holding portions include a plurality of adsorption portions having different distances from a central portion of the region and a plurality of static electricity having different distances from a central portion of the region The control unit controls the plurality of adsorption units to hold the first substrate in order to cause the plurality of electrostatic chucks to hold the first substrate in order from the adsorption unit having a short distance from the central portion of the region. And the operation of the above plurality of electrostatic chucks.